TransistorTransistor Logic(TTL)

Popular in discrete components systems.

Not used in modern LSI chips.

Standard TTL IC numbers and functions:

74xdd
0 to 70C
e.g.

or

54xdd
-55 to 125C

7400 : Quad 2-i/p NAND basic TTL technology

74LS94: 4bit shift register Low power Schottky TTL technology

SimpleTTLInverter

Simple cct (2 tr., 2 res.)

Small size

SimpleTTLInverterVTC 1
VIN Lo QI (BE) forward biased
By proper choice of RB QI sat for VIN=VLO

QO cutoff VOUT = VOH = VCC

Increasing VIN VBEO will reach 0.7V (ON)

QO will FA
VIL= VBEO(FA) - VCEI(sat) = 0.7 - 0.2 = 0.5V

SimpleTTLInverterVTC 2
Increasing VIN further VBEO will reach 0.8V
QO will sat
VOL= VCEO(sat) = 0.2V
also
VIN = VIH = VBEO(sat) - VCEI(sat)
= 0.8 0.2 = 0.6V
For VIN > VIH QIBE reverse
VBCI = VCC IBIRB VBEO(sat) QIBC forward
QI reverse active!
NMH = 5 - 0.6 = 4.4V
NML = 0.5 0.2 = 0.3V

DynamicAdvantage
At instant of VI switching Hi to Lo:
VEI VOL = VCEO (sat) 0.2V but VCI still at VBEO (sat) 0.8V
QIBE becomes fwd:
VBI = VIN + VBE(FA) = 0.2 + 0.7 = 0.9V
Also:
VBCI = VBI VCI = 0.9 0.8 = 0.1 < 0.7V
QIBC is still in reverse
QI FA current gain

Advantage: Large initial current removing charges on Q O base.

Faster switch off.

DynamicAdvantageExample
Calculate the initial QO base current
When the i/p to the gate is switched
from Hi to Lo.

SimpleTTLNANDGate
QI: Multiple Emitter BJT
Advantage: Smaller size than 3 BJTs

Case 1: Any i/p Lo

QBEI (Fwd) IBI large
QI (sat) QO(cutoff)
VOUT = VOH

Case 2: All i/p Hi

QBEI (Rev) VBI = VCC
QBCI (Fwd) QI (RA)
VBO = VCC - VBCI (Fwd) QO(sat)
VOUT = VOL

StandardTTLNANDGate(7400)

StandardTTLNANDGate(7400)
Active
PullUp

Drive
Splitter

Level
Shifting

Clamping
Diodes

TotemPole
Totem
Pole

-Improved speed (Totem pole)

-Improved i/p protection (clamping
diodes)

TTLGateCircuitParts
1. Clamping Diodes (DC): To protect i/p from
negative spikes.
2. Discharge Resistor (RD): Provides a discharge
path for the base of QO when switching from
sat. to cutoff (OL to OH). Faster speed.
3. Active Pull-up (QP & RCP): Provides larger
current to load gates w/ OH for faster charging
of load bases and increased fan-out.
Let load be capacitor CEQ.
Time constants and initial currents give
indication about gate switching speed.
Comparing between the simple BJT inverter
and the standard TTL gate: (Next slide)
4. Level Shifting Diode (DL): Provides voltage
isolation (0.7V) between QO and QP to ensure
no simultaneous conduction of both. ( 2nd slide)

CapacitiveLoadComparison
Simple BJT Inverter

Standard TTL Gate

OL OH

>>
<<

Switching speed improved.

LevelShiftingDiode
For OL, to ensure QP & QO will not conduct
simultaneously.

Assume QP conducting, DL on.

QP cannot be conducting cutoff

because of level shifting DL.

ActiveElementsStatus
Output Low

Output High

TTLVTCCalculations
VIN Lo VBEI (ON)

ICI 0, assuming QS cutoff

ICI << IBI QI is sat
QS is truly in cutoff, also QO for:
VIN < VBES (FA) VCEI (sat)
VBP = VCC VBEP & DL (fwd)
VOUT will rise until QP and DL reach edge of conduction
Increasing VIN will raise VBS until VBES is FA

TTLVTCCalculations 2
Increasing VIN > VIL
VBO (ON) QO (FA)

Slope of VTC changes because current

is not going through RD anymore.

TTLVTCCalculations 3
Increasing VIN further:
QO & QS reach sat

StandardTTLVTC

TTLFanOut 1
Driving gate Hi Load gates QI (RA) No load current Fan-out not a problem

TTLFanOut 2
Driving gate OL Load gates QI (sat) Hi load current sunk into QO Fan-out limitation

TTLFanOutDerivation 1

TTLFanOutDerivation 2

TTLFanOutExample

TTLPowerDissipation

OpenCollectorTTL

LowPowerTTL(74L04)Inverter

Increased resistor values.

Lower power but also lower
speed and lower fan-out.

HighSpeedTTL(74H04)Inverter
Reduced resistor values.
Higher speed but also higher
power.
Note: Darlington pair in
pull-up section, further
increase in current output.
REP for discharge of QP2
base.