PD - 91330I

IRF7413
HEXFET Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
100% RG Tested

A
A
D

VDSS = 30V
RDS(on) = 0.011

Top View

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.

SO-8

Absolute Maximum Ratings

Symbol
VDS

Parameter

Max

dv/dt

Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt

TJ, TSTG

Junction and Storage Temperature Range

VGS
ID @ TA = 25C
ID @ TA = 70C
IDM
PD @TA = 25C
EAS

Units

30

20
13
9.2
58
2.5

0.02
260

mW/C
mJ

5.0

V/ns

-55 to +150

Thermal Resistance Ratings

Symbol
RJL
RJA

Parameter

h
gh

Junction-to-Drain Lead
Junction-to-Ambient

Typ

Max

20

50

Units
C/W

02/14/07

IRF7413
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Symbol

Parameter

V(BR)DSS
V(BR)DSS/TJ

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)
gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Min

Typ

Max

Units

30

1.0
10

1.2

0.034

52
6.1
16

8.6
50
52
46
1800
680
240

0.011
0.018
3.0

12
25
-100
100
79
9.2
23
3.7

V
V/C

Min.

Typ.

Max.

Units

V
S
A
nA

nC

ns

pF

Conditions
VGS = 0V, ID = 250A
Reference to 25C, ID = 1mA
VGS = 10V, ID = 7.3A
VGS = 4.5V, ID = 3.7A
VDS = VGS, ID = 250A
VDS = 10V, ID = 3.7A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125C
VGS = -20V
VGS = 20V
ID = 7.3A
VDS = 24V
VGS = 10V, See Fig. 6 and 9

f
f

VDD = 15V
ID = 7.3A
RG = 6.2
RG = 2.0, See Fig. 10
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Symbol
IS
ISM
VSD
trr
Qrr

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

c

3.1

58

74
200

1.0
110
300

A
V
ns
nC

Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25C, IS = 7.3A, VGS = 0V
TJ = 25C, IF = 7.3A
di/dt = 100A/s

Notes:

Repetitive rating; pulse width limited by

ISD 7.3A, di/dt 100A/s, VDD V(BR)DSS,

Starting TJ = 25C, L =9.8mH

Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 11 )

RG = 25, IAS =7.3A. (See Figure 12)

T J 150C

Surface mounted on FR-4 board

R is measured at TJ approximately 90C

IRF7413
100

100

VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V

VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP

I D, Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

TOP

10

3.0V

20s PULSE WIDTH

TJ = 25C
A

1
0.1

3.0V

10

20s PULSE WIDTH

TJ = 150C
A

1
0.1

10

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

R DS(on) , Drain-to-Source On Resistance

(Normalized)

I D , Drain-to-Source Current (A)

100

TJ = 150C
TJ = 25C
10

V DS = 10V
20s PULSE WIDTH

1
3.0

3.5

4.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

10

V DS, Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

4.5

I D = 7.3A

1.5

1.0

0.5

VGS = 10V

0.0
-60

-40

-20

20

40

60

80

100 120 140 160

TJ , Junction Temperature (C)

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF7413
3200

V GS , Gate-to-Source Voltage (V)

2800

C, Capacitance (pF)

20

V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd

Coss

12

1600
1200

Crss

800

V DS = 24V
V DS = 15V

16

2400
2000

I D = 7.3A

400
0
1

10

100

FOR TEST CIRCUIT

SEE FIGURE 9

10

VDS , Drain-to-Source Voltage (V)

30

40

50

60

Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)
TJ = 25C

ID , Drain Current (A)

ISD , Reverse Drain Current (A)

20

TJ = 150C

100

10

VGS = 0V

1
0.4

1.2

2.0

2.8

VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

3.6

100us
10

1ms

TC = 25 C
TJ = 150 C
Single Pulse

1
0.1

10ms

10

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

100

IRF7413
V DS

QG

10V

QGS

VGS

QGD

D.U.T.

RG

VG

RD

- VDD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Charge

Fig 9a. Basic Gate Charge Waveform

Fig 10a. Switching Time Test Circuit

Current Regulator
Same Type as D.U.T.

VDS
50K
12V

90%

.2F
.3F

+
V
- DS

D.U.T.

10%
VGS

VGS
3mA

td(on)
IG

tr

t d(off)

tf

ID

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJA )

100

D = 0.50

10

0.20
0.10
0.05
PDM

0.02
1

0.01

t1
t2

SINGLE PULSE
(THERMAL RESPONSE)

0.1
0.0001

0.001

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA

0.01

0.1

10

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

100

15V

VDS

D.U.T

RG

IAS

20V

DRIVER

+
- VDD

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp

EAS , Single Pulse Avalanche Energy (mJ)

IRF7413
600

TOP
500

BOTTOM

ID
3.3A
6.0A
7.3A

400

300

200

100

25

50

75

100

125

150

Starting T J, Junction Temperature ( oC)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

IRF7413
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

Driver Gate Drive

Period

P.W.

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

D=

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 13. For N-Channel HEXFETS

ISD

IRF7413
SO-8 Package Details
Dimensions are shown in milimeters (inches)
D

DIM

B
5

E
1

6X

0.25 [.010]

e1

8X b
0.25 [.010]

MILLIMETERS

MAX

MIN

.0532

.0688

1.35

1.75

A1 .0040

.0098

0.10

0.25

.013

.020

0.33

0.51

.0075

.0098

0.19

0.25

.189

.1968

4.80

5.00

.1497

.1574

3.80

4.00

.050 BAS IC

1.27 BAS IC

e1

INCHES
MIN

MAX

.025 BAS IC

0.635 BAS IC

.2284

.2440

5.80

6.20

.0099

.0196

0.25

0.50

.016

.050

0.40

1.27

K x 45
C

A1

y
0.10 [.004]

8X L

8X c

C A B

FOOT PRINT

NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.

8X 0.72 [.028]

2. CONT ROLLING DIMENS ION: MILLIMET ER

3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].

6.46 [.255]

7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O

A S UBS T RAT E.
3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

INTERNATIONAL
RECTIFIER
LOGO

XXXX
F7101

DATE CODE (YWW)

P = DESIGNATES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER

IRF7413
SO-8 Tape and Reel
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 )

FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

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Visit us at www.irf.com for sales contact information.02/2007