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Special Issue on Lead-Free and Advanced Interconnection Materials for Electronics
#2010 The Japan Institute of Metals
Sn-based alloys with high creep resistance are required for soldering applications. This paper describes the eect of solid solution
strengthening on the creep resistance of Sn-Zn alloys. The maximum solubility limit of Zn is 0.34 mass% in Sn. The creep behaviors of Sn, Sn0.1 mass%Zn and Sn-0.4 mass%Zn were examined at 298 and 398 K under constant strain rates ranging from 1 104 to 1 102 s1 . The
creep resistance of Sn was improved signicantly by the addition of a small amount of Zn owing to the solid solution strengthening. The creep
resistance of Sn-0.4 mass%Zn was at the same level as that of Sn-37 mass%Pb. We obtained a stress exponent of about 7 and an activation
energy of 4145 kJ/mol, which indicates that the creep behavior was climb-controlled dislocation creep controlled by pipe diusion. The nding
that a small addition of Zn improves the creep resistance is useful for developing new Pb-free solders. [doi:10.2320/matertrans.MJ201023]
(Received June 14, 2010; Accepted August 2, 2010; Published September 15, 2010)
Keywords: lead-free solder, tin-zinc alloys, creep resistance, solid solution strengthening, stacking fault energy
1.
Introduction
Table 1
Zn
Sb
Cu
Bi
Pb
Fe
In
Sn
balance 0.001
0.001
0.001
0.001
0.002
0.002
0.003
Sn-0.1Zn
balance
0.10
0.001
0.001
0.002
0.002
0.002
0.003
Sn-0.4Zn
balance
0.41
0.001
0.001
0.001
0.001
0.002
0.003
2.
Experimental Procedure
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(a)
(b)
(c)
10m
Fig. 1
Fig. 2
10m
(a) Sn-Zn phase diagram and (b) Sn-Zn partial phase diagram for the Sn rich part.15)
10m
Results
n 1 "n
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Fig. 3 Typical true stress vs. true strain curves for Sn, Sn-0.1Zn and Sn-0.4Zn at temperatures of (a) 298 and (b) 398 K under a strain rate
of 1 103 s1 .
Fig. 4 Strain rates for Sn, Sn-0.1Zn and Sn-0.4Zn as a function of the
shear-modulus-normalized ow stress at 298 and 398 K.
Table 2
3:17 1010
66;607-60:3T
Ref. 20)
Ref. 25)
25;314-24:6T
Ref. 25)
Ref. 23)
Ref. 23)
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in Sn, Sn-0.1Zn and Sn-0.4Zn is consistent with the climbcontrolled dislocation creep controlled by pipe diusion.22)
Adeva et al.23) have estimated that the activation energy for
pipe diusion in Sn was 46 kJ/mol, based on the theoretical
relationship proposed by Sherby and Weertman.24) This
activation energy for pipe diusion is close to the activation
energies of 4145 kJ/mol in Sn, Sn-0.1Zn and Sn-0.4Zn
obtained in the present study. Therefore, it was demonstrated
that the creep mechanism of Sn, Sn-0.1Zn and Sn-0.4Zn
was climb-controlled dislocation creep controlled by pipe
diusion.
4.
Discussion
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Table 3 The material constant, A, and the stacking fault energies for Sn,
Sn-0.1Zn and Sn-0.4Zn.
Material constant, A
Sn
Sn-0.1Zn
1:1 10
7:2 106
0
0.40 0
Sn-0.4Zn
3:9 105
0.15 0
Conclusions
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