MJ15003 (NPN),

MJ15004 (PNP)
Preferred Device

Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are PowerBase
power transistors
designed for high power audio, disk head positioners and other linear
applications.

High Safe Operating Area (100% Tested)

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20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 V 250 W

5.0 A @ 50 V
For Low Distortion Complementary Designs
High DC Current Gain
hFE = 25 (Min) @ IC = 5 Adc

MARKING
DIAGRAM

MAXIMUM RATINGS

Symbol

Value

Unit

CollectorEmitter Voltage

Rating

VCEO

140

Vdc

CollectorBase Voltage

VCBO

140

Vdc

EmitterBase Voltage

VEBO

Vdc

Collector Current Continuous

IC

20

Adc

Base Current Continuous

IB

Adc

Emitter Current Continuous

IE

25

Adc

Total Power Dissipation @ TC = 25C

Derate above 25C

PD

250
1.43

Watts
W/C

TJ, Tstg

65 to +200

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, JunctiontoCase

Maximum Lead Temperature for Soldering

Purposes:
1/16 from Case for
10 seconds

Semiconductor Components Industries, LLC, 2002

June, 2002 Rev. 10

Symbol

Max

Unit

RJC

0.70

C/W

TL

265

xxxxx
YYWW
TO204AA (TO3)
CASE 107
xx
A
WL, L
YY, Y
WW, W

= Specific Device Code

= Assembly Location
= Wafer Lot
= Year
= Work Week

ORDERING INFORMATION
Device

Package

Shipping

MJ15003

TO204AA (TO3)

100 Foams

MJ15004

TO204AA (TO3)

100 Foams

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

MJ15003/D

This datasheet has been downloaded from http://www.digchip.com at this page

MJ15003 (NPN), MJ15004 (PNP)

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

140

Vdc

100
2

Adc
mAdc

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage (Note 1)

(IC = 200 mAdc, IB = 0)

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)

ICEX

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ICEO

250

Adc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

IEBO

100

Adc

5.0
1.0

hFE

25

150

Collector Emitter Saturation Voltage

(IC = 5 Adc, IB = 0.5 Adc)

VCE(sat)

1.0

Vdc

Base Emitter On Voltage

(IC = 5 Adc, VCE = 2 Vdc)

VBE(on)

2.0

Vdc

fT

2.0

MHz

cob

1000

pF

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Baised

(VCE = 50 Vdc, t = 1 s (non repetitive))
(VCE = 100 Vdc, t = 1 s (non repetitive))

IS/b

Adc

ON CHARACTERISTICS

DC Current Gain
(IC = 5 Adc, VCE = 2 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

IC, COLLECTOR CURRENT (AMP)

1. Pulse Test: Pulse Width = 300
s, Duty Cycle
2%.

20
15
10

There are two limitations on the powerhandling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.

TC = 25C

7
5
3
2

TJ = 200C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO

0.7
0.5
0.3
0.2

5 7 10
20 30
50 70 100 150 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. ActiveRegion Safe Operating Area

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2

MJ15003 (NPN), MJ15004 (PNP)

PACKAGE DIMENSIONS

CASE 107
TO204AA (TO3)
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

A
N
C
T
E
D

2 PL

0.13 (0.005)

T Q

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

SEATING
PLANE

Q
0.13 (0.005)

T Y

INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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3

MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77

MJ15003 (NPN), MJ15004 (PNP)

PowerBase is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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For additional information, please contact your local
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MJ15003/D