UNISONIC TECHNOLOGIES CO.

, LTD
75N75

Power MOSFET

75Amps, 75Volts
N-CHANNEL POWER MOSTFET

TO- 251

DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.

TO-252

TO-220

FEATURES
* RDS(ON) = 12.5m @VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness

TO-220F

*Pb-free plating product number: 75N75L

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
75N75-TA3-T
75N75L-TA3-T
TO-220
75N75-TF3-T
75N75L-TF3-T
TO-220F
75N75-TM3-T
75N75L-TM3-T
TO-251
75N75-TN3-R
75N75L-TN3-R
TO-252
75N75-TN3-T
75N75L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source

75N75L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating

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Copyright 2005 Unisonic Technologies Co., Ltd.

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S

Packing
Tube
Tube
Tube
Tape Reel
Tube

(1) T: Tube, R: Tape Reel

(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn

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Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER
Drain to Source Voltage

SYMBOL
VDSS

RATINGS
UNIT
75
V
TC = 25
75
A
ID
Continuous Drain Current
TC = 100
56
A
Drain Current Pulsed (Note 1)
IDM
300
A
20
Gate to Source Voltage
VGS
V
Single Pulsed (Note 2)
EAS
900
mJ
Avalanche Energy
300
mJ
Repetitive (Note 1)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
15
V/ns
TC = 25
220
W
Total Power Dissipation
PD
Derating above 25
1.4
W/
Junction Temperature
TJ
+150

Storage Temperature
TSTG
-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Thermal Resistance Case-Sink

SYMBOL
JA
JC
CS

MIN

TYP

MAX
62.5
0.8

0.5

UNIT
/W
/W
/W

ELECTRICAL CHARACTERISTICS (TC = 25, unless otherwise specified)

PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)

SYMBOL

TEST CONDITIONS

BVDSS

VGS = 0 V, ID = 250 A
ID = 1mA,
BVDSS/TJ
Referenced to 25
VDS = 75 V, VGS = 0 V
IDSS
VDS = 75 V, VGS = 0 V,
TJ = 150
VGS = 20V, VDS = 0 V
IGSS
VGS = -20V, VDS = 0 V

TYP

MAX

75

UNIT
V

0.08
20

250

100
-100

nA
nA

4.0

15

VDS = VGS, ID = 250 A

RDS(ON)

VGS = 10 V, ID = 48 A

12.5

CISS
COSS
CRSS

VGS = 0 V, VDS = 25 V
f = 1MHz

3300
530
80

pF
pF
pF

12
79
80
52
90
20
30

ns
ns
ns
ns
nC
nC
nC

tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD

VDD = 38V, ID =48A,

VGS=10V, (Note 4, 5)
VDS = 60V, VGS = 10 V
ID = 48A, (Note 4, 5)

2.0

V/

VGS(TH)

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MIN

140
35
45

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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
VSD
IS = 48A, VGS = 0 V
IS = 48A, VGS = 0 V
Reverse Recovery Time
trr
dIF / dt = 100 A/s
Reverse Recovery Charge
Qrr
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.24mH, IAS=48A, RG=20, Starting TJ=25
3. ISD48A, di/dt300A/s, VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse Width300s,Duty Cycle2%
5. Essentially independent of operating temperature.

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MIN

TYP

MAX
75
300
1.4

90
300

UNIT
A
V
ns
C

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TEST CIRCUITS AND WAVEFORMS

D.U.T.

VDS
+
-

RG
Driver
* dv/dt controlled by RG
* I SD controlled by pulse period
* D.U.T.-Device Under Test

Same Type
as D.U.T.

VGS

VDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS
(Driver)

P.W.

Period

D=

P. W.
Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.)

di/dt
IRM
Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.)

VDD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)

RL

VDS

VDS

90%

VDD

VGS
RG

VGS

D.U.T.

10V

10%
t D(ON )

Pulse Width 1s

tD (OFF)
tF

tR

Duty Factor 0.1%

Fig. 2A Switching Test Circuit

Same Type
as D.U.T.

50k
12V

0.2F

Fig. 2B Switching Waveforms

QG

10V

0.3F
VDS

QGS

QGD

VGS
DUT
VG

1mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L
VDS
BVDSS

RD

10V

VDD
D.U.T.

tp

Fig. 4A Unclamped Inductive Switching Test Circuit

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IAS

tp

Time

Fig. 4B Unclamped Inductive Switching Waveforms

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TYPICAL CHARACTERISTICS
Transfer Characteristics

100

10-1

14

VGS=10V

13

12

11

10 20 30 40 50 60 70 80 90 100
Drain Current, I D (A)

6000
5000
4000

Capacitance Characteristics
(Non-Repetitive)
CISS=CGS+C GD (CDS=shorted)
COSS =CDS+C GD
CRSS=CGD
C ISS

3000
2000
1000
COSS
0

CRSS

*Note:
1. VGS=0V
2. f = 1MHz

100

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1 50

4 5
6 7
8 9 10
3
Gate-Source Voltage, VGS (V)

Reverse Drain Current vs. Allowable Case

Temperature
102

150
10 1

25
*Note:
1. VGS=0V
2. 250s Test

10 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Voltage, VSD (V)

1.6

Gate Charge Characteristics

12
10
8

VDS=38V

VDS=60V

4
2
0

5
10 15 20 25 30 35
Drain-Source Voltage, VDC (V)

25

Drain Current, ID (A)

Note:
1. VDS=25V
2. 20s Pulse Test

On-Resistance Variation vs. Drain

Current and Gate Voltage

15

Capacitance (pF)

10 1

101
10 0
Drain-Source Voltage, VDS (V)

Reverse Drain Current, ISD (A)

Drain-Source On-Resistance, RDS(ON) (m)

4.5V

101

102

Gate-to-Source Voltage, VGS (V)

Drain Current, ID (A)

On-State Characteristics
V GS
Top: 15V
10 V
8 V
7 V
102
6 V
5 .5V
5V
Bottorm : 4.5V

*Note: ID=48A
5 10 15 20 25 30 35 40 45
Total Gate Charge, Q G (nC)

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Breakdown Voltage Variation vs.

Junction Temperature

1.2
1.1

1.0
*Note:
1. VGS=0V
2. ID=250A

0.9

0.8
-100

-50

50

100

150 200

Drain-Source On-Resistance, RDS(ON),

(Normalized)

Drain-Source Breakdown Voltage,

BVDSS(Normalized)

TYPICAL CHARACTERISTICS(Cont.)

Junction Temperature, T J ()

3.0
2.5
2.0
1.5
1.0

0.0
-100 -50
0
50
100 150 200
Junction Temperature, T J ()

Maximum Drain Current vs. Case

Temperature

60
100s

10

10ms

1ms

DC
1

*Note:
1. T c=25
2. T J=150
3. Single Pulse

0.1
1

10
100
1000
Drain-Source Voltage, VD (V)

Drain Current, ID (A)

Drain Current , ID,(A)

70

Operation in This
Area by RDS(ON)

*Note:
1. VGS=10V
2. I D=3.5A

0.5

Maximum Safe Operating

100

On-Resistance Variation vs.

Junction Temperature

50
40
30
20
10
0

25

50

75

100

125

150

Case Temperature, T C ()

Thermal Response, ZJC (t)

Transient Thermal Response Curve

D=0.5
0.2

0.1

0.1

0.05
0.02
0.01

0.01

Single pulse

*Note:
1. ZJ C (t) = 0.88/W Max.
2. Duty Factor , D=t1/t2
3. TJ -TC =PDMZJ C (t)

10
1
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration, t 1 (sec)

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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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