2SK2173

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L MOSV)

2SK2173
Chopper Regulator, DCDC Converter and Motor Drive
Applications

Unit: mm

4 V gate drive
Low drainsource ON resistance

: RDS (ON) = 13 m (typ.)

High forward transfer admittance

: |Yfs| = 40 S (typ.)

Low leakage current

: IDSS = 100 A (max) (VDS = 60 V)

Enhancementmode

: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drainsource voltage

VDSS

60

Draingate voltage (RGS = 20 k)

VDGR

60

Gatesource voltage

VGSS

20

(Note 1)

ID

50

Pulse (Note 1)

IDP

200

Drain power dissipation (Tc = 25C)

PD

125

Single pulse avalanche energy

(Note 2)

EAS

683

mJ

Avalanche current

IAR

50

Repetitive avalanche energy (Note 3)

EAR

12.5

mJ

TOSHIBA

Channel temperature

Tch

150

Weight: 4.6 g (typ.)

Storage temperature range

Tstg

55~150

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (chc)

1.0

C / W

Thermal resistance, channel to

ambient

Rth (cha)

50

C / W

Drain current

DC

1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE

JEDEC

JEITA

2-16C1B

Thermal Characteristics
Characteristics

Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: VDD = 25 V, Tch = 25C (initial), L = 371 H, RG = 25 , IAR = 50 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.

2002- 07- 22

2SK2173
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 16 V, VDS = 0 V

10

Drain cutoff current

IDSS

VDS = 60 V, VGS = 0 V

100

V (BR) DSS

ID = 10 mA, VGS = 0 V

60

V
V

Drainsource breakdown voltage

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.8

2.0

VGS = 4 V, ID = 25 A

19

25

VGS = 10 V, ID = 25 A

13

17

VDS = 10 V, ID = 25 A

28

40

3550

550

Drainsource ON resistance

RDS (ON)

Forward transfer admittance

|Yfs|

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitance

Coss

1600

tr

25

ton

55

tf

60

toff

180

Total gate charge (Gatesource

plus gatedrain)

Qg

110

Gatesource charge

Qgs

70

Gatedrain (miller) charge

Qgd

40

Rise time

Turnon time

VDS = 10 V, VGS = 0 V, f = 1 MHz

Switching time

m
S

pF

ns
Fall time

Turnoff time

VDD 48 V, VGS = 10 V, ID = 50 A

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

50

Pulse drain reverse current

(Note 1)

IDRP

200

Forward voltage (diode)

VDSF

IDR = 50 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 50 A, VGS = 0 V

120

ns

Reverse recovered charge

Qrr

dIDR / dt = 50 A / s

0.2

Marking

K2173

Lot Number
Type

Month (starting from alphabet A)

Year

(last number of the christian era)

2002- 07- 22

2SK2173

2002- 07- 22

2SK2173

2002- 07- 22

2SK2173

RG = 25
VDD = 25 V, L = 371 H

E AS =

1
B VDSS

L I2

2
B VDSS VDD

2002- 07- 22

2SK2173

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

2002- 07- 22