FQAF19N60

April 2000

QFET

TM

FQAF19N60
600V N-Channel MOSFET
General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

11.2A, 600V, RDS(on) = 0.38 @ VGS = 10 V

Low gate charge ( typical 70 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

D
!
"

! "

G!
G D S

Absolute Maximum Ratings

Symbol
VDSS

"
"

TO-3PF

FQAF Series

TC = 25C unless otherwise noted

Parameter

ID

Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current

IDM

Drain Current

FQAF19N60

- Continuous (TC = 100C)

- Pulsed

Units

600

11.2

7.0

(Note 1)

44.8

VGSS

Gate-Source Voltage

30

EAS

Single Pulsed Avalanche Energy

(Note 2)

1150

mJ

11.2

IAR

Avalanche Current

(Note 1)

EAR

Repetitive Avalanche Energy

(Note 1)

12

mJ

dv/dt
PD

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25C)

(Note 3)

4.5
120
0.96
-55 to +150

V
ns
W
W/C
C

300

TJ, TSTG
TL

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

Thermal Characteristics
Symbol
RJC

Typ

Max

Thermal Resistance, Junction-to-Case

Parameter

--

1.04

CW

RJA

Thermal Resistance, Junction-to-Ambient

--

40

CW

2000 Fairchild Semiconductor International

Units

Rev. A, April 2000

Symbol

= 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

600

--

--

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
/ TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25C

--

0.65

--

V/C

VDS = 600 V, VGS = 0 V

--

--

10

VDS = 480 V, TC = 125C

IDSS

Zero Gate Voltage Drain Current

--

--

100

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

3.0

--

5.0

--

0.3

0.38

--

12

--

--

2800

3600

pF

--

350

450

pF

--

35

45

pF

--

65

140

ns
ns

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 5.6 A

gFS

Forward Transconductance

VDS = 50 V, ID = 5.6 A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 300 V, ID = 18.5 A,

RG = 25
(Note 4, 5)

VDS = 480 V, ID = 18.5 A,

VGS = 10 V
(Note 4, 5)

--

210

430

--

150

310

ns

--

135

280

ns

--

70

90

nC

--

17

--

nC

--

33

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

11.2

ISM

--

--

44.8

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 11.2 A
Drain-Source Diode Forward Voltage

--

--

1.4

trr

Reverse Recovery Time

--

420

--

ns

Qrr

Reverse Recovery Charge

--

4.7

--

VGS = 0 V, IS = 18.5 A,
dIF / dt = 100 A/s

(Note 4)

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 16.8mH, IAS = 11.2A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD
18.5A, di/dt
200A/s, VDD
BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width
300s, Duty cycle
2%
5. Essentially independent of operating temperature

2000 Fairchild Semiconductor International

Rev. A, April 2000

FQAF19N60

Electrical Characteristics




T

VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :

ID , Drain Current [A]

10

ID , Drain Current [A]

10

10

150

10

25

-55


Notes :
1. VDS = 50V
2. 250s Pulse Test

Notes :
1. 250s Pulse Test
2. TC = 25
-1

-1

10

10

10

10

10

VGS , Gate-Source Voltage [V]

VDS , Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.2

IDR , Reverse Drain Current [A]

RDS(ON) [
],
Drain-Source On-Resistance

1.0
1

10

VGS = 10V

0.8

VGS = 20V
0.6

10

0.4

0.2

150

25


Notes :
1. VGS = 0V
2. 250s Pulse Test

Note : TJ = 25

0.0

-1

10

20

30

40

50

60

70

10

0.2

0.4

0.6

ID, Drain Current [A]

5000

3000

Coss

1.2

1.4

1.6

12

VDS = 120V
10

2000

Notes :
1. VGS = 0 V
2. f = 1 MHz

Crss
1000

VGS, Gate-Source Voltage [V]

Ciss

1.0

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and
Temperature

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

4000

0.8

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Capacitance [pF]

FQAF19N60

Typical Characteristics

VDS = 300V
VDS = 480V

2

Note : ID = 18.5 A

0
-1
10

10

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2000 Fairchild Semiconductor International

15

30

45

60

75

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Rev. A, April 2000

FQAF19N60

Typical Characteristics

(Continued)

3.0

1.2

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

2.5

RDS(ON) , (Normalized)
Drain-Source On-Resistance

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

2.0

1.5

1.0

Notes :
1. VGS = 10 V
2. ID = 9.3 A

0.5

150

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

12
Operation in This Area
is Limited by R DS(on)

ID, Drain Current [A]

100 s

10 s

ID, Drain Current [A]

10

1 ms

10

10 ms
DC

10

Notes :

1. TC = 25 C
o

2. TJ = 150 C
3. Single Pulse
-1

10

10

10

0
25

10

10

50

100

125

150

Figure 10. Maximum Drain Current

vs. Case Temperature

D = 0 .5

N o te s :
1 . Z
J C ( t) = 1 .0 4  /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z
J C ( t)

0 .2
10

0 .1

-1

0 .0 5

PDM

0 .0 2

JC

( t) , T h e r m a l R e s p o n s e

Figure 9. Maximum Safe Operating Area

10

75

TC, Case Temperature [
]

VDS, Drain-Source Voltage [V]

t1

0 .0 1

t2

s i n g l e p u ls e
10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

2000 Fairchild Semiconductor International

Rev. A, April 2000

FQAF19N60

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD
DUT

10V
tp

2000 Fairchild Semiconductor International

ID (t)
VDS (t)

VDD
tp

Time

Rev. A, April 2000

FQAF19N60

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

2000 Fairchild Semiconductor International

Rev. A, April 2000

TO-3PF
4.50 0.20

5.50 0.20
15.50 0.20

3.00 0.20

3.60 0.20

2.00 0.20
2.00 0.20

2.00 0.20

22.00 0.20

1.50 0.20

16.50 0.20

2.50 0.20

0.85 0.03

23.00 0.20

10

10.00 0.20

(1.50)

2.00 0.20

14.50 0.20

16.50 0.20

2.00 0.20

4.00 0.20
3.30 0.20

+0.20

0.75 0.10

2.00 0.20

3.30 0.20

5.45TYP
[5.45 0.30]

2000 Fairchild Semiconductor International

5.45TYP
[5.45 0.30]

+0.20

0.90 0.10

5.50 0.20

26.50 0.20
14.80 0.20

FQAF19N60

Package Dimensions

Rev. A, April 2000

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
E2CMOS
FACT
FACT Quiet Series
FAST
FASTr
GTO

HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6

SuperSOT-8
SyncFET
TinyLogic
UHC
VCX

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2000 Fairchild Semiconductor International

Rev. A, January 2000