The MOS Transistor

We consider an n channel transistor. When a positive potential is applied to the gate with respect
to the source, a depletion region is formed under the gate, resulting from holes being pushed away
from the silicon-silicon dioxide interface. The depletion region consists of fixed ions that have a
negative charge using one dimensional analysis , the charge density of depletion region is given
by
(-N )
=e A (1)
The electric field resulting from this charge is
E(x)=/ dx=
= (-eNA/si) dx
= (-eNA/si)x+c(2)
The integration constant c is determined by evaluating E(x) at the edges of the depletion region (x=0 at
the Si-SiO2 interface; X=Xd at the boundary of the depletion region in the bulk)

E(0)=E0=(-eNA/si).0+c=c
E(Xd)= 0 =(-eNA/si).Xd+c=c
E(x)=eNA. (Xd-X)/si ......................

(3)

Applying the relationship between potential and electric field yields

F

Xd

d = -E(x)dx = -eNA (Xd-x)/si dx

Integrating both sides with appropriate limit of integration gives

d = -eNA (Xd-x)/si dx
2

= -eNAXd /2si
= F- S
or

S F = eNAXd /2si ...................... (4)

Here F is the equilibrium electrostatic potential (Fermi potential) in the semiconductor, S is the
surface potential of the semiconductor and Xd is thickness of depletion region.
For p -type semiconductor, F is given by
F = +VT ln(ni/NA)
= - VT ln(NA/ni) where VT = KT/q
and for n type semiconductor F is given by
F = VT ln(ND/ni)
Equation(4) can be solved for Xd assuming | S - F|>=0
to get

1/2

Xd=[2si| S F| / eNA]
...................... (5)
The immobile charge due to acceptor ion that have been stripped of their mobile holes is given by

Q = -eNAXd
Q = -eNA[2si| S F|/eNA]
1/2

= -(2eNAsi| S F|)

1/2

...................... (6)

When the gate voltage reaches a value called the threshold voltage, designated as VTh,the substrate
underneath the gate becomes inverted, i.e. it changes from p type to an n type semi conductor.
Consequently an n type channel exists between the source and the drain that allows carriers to
flow.In order to achieve this inversion,the surface potential must increase from its original negative
value(S= F) to zero (S=0) and then to a positive value(S= - F) . The value of the gate-source
voltage necessary to cause this change in surface potential is defined as the threshold voltage,VT
.This condition is known as strong inversion.
With substrate at ground potential the charge stored in the depletion region between the channel
under the gate and the substrate is given by equation(6) where S has to be replaced by F to
account for the fact that VGS=VT.
This charge Qb0 is written as
1/2
Qb0 = (2eNA Si| 2F |) ...................... (7)
If a reverse bias voltage is applied across the pn junction, equation(7) becomes
1/2

Qb = (2eNA Si| 2F + VSB|)

...................... (8)

An expression for the threshold voltage can be developed by breaking it down into several
components.First the term MS(the metal to- silicon work function) must be included to
represent the difference in the work function beteen the gate material and bulk silicon in the
channel region.The term MS is given by
MS = F(substrate) - F(gate)
Second, a gate voltage of [ 2 F Qb/Cox] is required to change the surface potential and offset . The

depletion region charge Qb.

Lastly these is always an undesired positive charge Qss present in the interface between the oxide
and the bulk silicon .This charge is due to impurities and imperfection at the interface and must be
compensated by a gate voltage of Qss/Cox. Thus the threshold voltage for the mos transistor can
be expressed as
VT = MS +( 2F Qb/Cox) + (- QSS/Cox )
= MS 2F -Qb0/Cox QSS/Cox - (Qb - Qb0 )/Cox
The threshold voltage can be rewritten as
VT = VTO + ((|-2F + VSB|)

1/2

1/2

- (|-2F|) ) ......................

(9)

where VTO = MS 2 F - Qb0/Cox - QSS/Cox ......................

(10)
and the body factor,body-effect coefficient, or bulk threshold parameter is defined as
1/2

= (2eSiNA)

/ Cox ...................... (11)

The signs for the various quantities in the Threshold Voltage function:

Parameter

N-channel
(p-type substrate)

P-channel
(n type substrate)

Qb0,Qb

QSS

VSB

MS
Metal
n+ poly
p+ poly

Problem:
Find the threshold voltage and body factor for an n-channel transistor with an n+ poly silicon gate if tox
-16 -3
-19 -3
= 200,NA= 3*10 cm ,gate doping ,ND = 4*10
cm and if the no. of positively charged ions at
10
-2
the oxide silicon interface open area is 10 cm .