80 N 06

UniFETTM
FDP80N06
tm
N-Channel MOSFET
60V, 80A, 10m
Features
Description
RDS(on) = 8.5m ( Typ.)@ VGS = 10V, ID = 40A
These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary, planar
stripe, DMOS technology.
Low gate charge(Typ. 57nC)

Low Crss(Typ. 145pF)
This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies,active power factor
correction, electronic lamp ballast based on half bridge topology.
Fast switching
Improved dv/dt capability
RoHS compliant
G
G D S
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
Ratings
60
Units
V
20
-Continuous (TC = 25oC)
80
65
ID
Drain Current
-Continuous (TC = 100oC)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
80
EAR
Repetitive Avalanche Energy
(Note 1)
17.6
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
(Note 1)
320
(Note 2)
480
mJ
(Note 3)
(TC = 25oC)
176
- Derate above 25oC
1.17
W/oC
-55 to +175
oC
300
oC
Ratings
Units
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds
TL
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case
0.85
RJA
Thermal Resistance, Junction to Ambient
62.5
2007 Fairchild Semiconductor Corporation

FDP80N06 Rev. A
C/W
www.fairchildsemi.com
FDP80N06 N-Channel MOSFET
September 2007
Device Marking
FDP80N06
Device
FDP80N06
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
60
0.075
V/oC
A
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TJ = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
VDS = 48V, TC = 150oC
10
IGSS
Gate to Body Leakage Current
VGS = 20V, VDS = 0V
100
2.0
--
4.0
8.5
10
67
ID = 250A, Referenced to 25 C
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
Static Drain to Source On Resistance
VGS = 10V, ID = 40A
gFS
Forward Transconductance
VDS = 25V, ID = 40A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V

f = 1MHz
2450
3190
pF
910
1190
pF
145
190
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Miller Charge
VDD = 30V, ID = 80A

RG = 25
(Note 4, 5)
VDS = 48V, ID = 80A

VGS = 10V
(Note 4, 5)
32
75
ns
259
528
ns
136
282
ns
113
236
ns
57
74
nC
15
nC
24
nC
Drain-Source Diode Characteristics

IS
Maximum Continuous Drain to Source Diode Forward Current
80
ISM
Maximum Pulsed Drain to Source Diode Forward Current
320
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 80A
1.4
trr
Reverse Recovery Time
64
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 80A

dIF/dt = 100A/s
127
nC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.15mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25C
3: ISD 80A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP80N06 Rev. A
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Typical Performance Characteristics

Figure 1. On-Region Characteristics
400
500
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
*Notes:
1. VDS = 20V
2. 250s Pulse Test
100
ID,Drain Current[A]
100
ID,Drain Current[A]
Figure 2. Transfer Characteristics
10
-55 C
175 C
25 C
10
*Notes:
1. 250s Pulse Test
2. TC = 25 C
1
0.1
1
VDS,Drain-Source Voltage[V]
10
4
6
8
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
0.03
500
0.02
VGS = 10V
0.01
VGS = 20V
100
175 C
25 C
10
*Notes:
1. VGS = 0V
*Note: TJ = 25 C
0.00
0
80
160
240
ID, Drain Current [A]
1
0.0
320
Figure 5. Capacitance Characteristics
4500
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
3000
Crss
1500
0
0.1
FDP80N06 Rev. A
1
10
VDS, Drain-Source Voltage [V]
2.0
10
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
Ciss
2. 250s Pulse Test
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
6000
Capacitances [pF]
10
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
0.4
0.02
VDS = 15V
VDS = 30V
VDS = 48V
2
*Note: ID = 80A
30
15
30
45
Qg, Total Gate Charge [nC]
60
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
1ms
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
75
10ms
DC
Operation in This Area

is Limited by R DS(on)
*Notes:
1. VGS = 10V
2. ID = 40A
90
100s
10
1.0
Figure 10. Maximum Drain Current

vs. Case Temperature
30s
100
1.5
0.5
-100
200
Figure 9. Maximum Safe Operating Area

1000
2.0
*Notes:
60
45
30
0.1
1. TC = 25 C
15
2. TJ = 175 C
3. Single Pulse
0.01
1
10
VDS, Drain-Source Voltage [V]
0
25
80
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
Thermal Response [ZJC]
2
1
0.5
0.2
0.1
0.1
t1
0.02
0.01
t2
0.01
*Notes:
o
Single pulse
1E-3
-5
10
FDP80N06 Rev. A
PDM
0.05
1. ZJC(t) = 0.85 C/W Max.

2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
10
10
Typical Performance Characteristics (Continued)
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP80N06 Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP80N06 Rev. A
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP80N06 Rev. A
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Build it Now
CorePLUS
CROSSVOLT
CTL
Current Transfer Logic
EcoSPARK
Power247
POWEREDGE
Power-SPM
PowerTrench
Programmable Active Droop
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
SMART START
SPM
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
Green FPS
Green FPS e-Series
GTO
i-Lo
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MillerDrive
Motion-SPM
OPTOLOGIC
OPTOPLANAR
Fairchild
Fairchild Semiconductor
FACT Quiet Series
FACT
FAST
FastvCore
FPS
FRFET
Global Power ResourceSM
PDP-SPM
Power220
SuperSOT-8
SyncFET
The Power Franchise
TinyBoost
TinyBuck
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
SerDes
UHC
UniFET
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
2.
Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
8
FDP80N06 Rev. A
TRADEMARKS

80 N 06

Încărcat de

Informații document

Titlu original

Drepturi de autor

Formate disponibile

Partajați acest document

Partajați sau inserați document

Opțiuni de partajare

Vi se pare util acest document?

Este necorespunzător acest conținut?

Drepturi de autor:

Formate disponibile

80 N 06

Încărcat de

Drepturi de autor:

Formate disponibile

UniFETTM

RDS(on) = 8.5m ( Typ.)@ VGS = 10V, ID = 40A

These N-Channel enhancement mode power field effect

Low gate charge(Typ. 57nC)

This advanced technology has been especially tailored to

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Drain to Source Voltage

Gate to Source Voltage

-Continuous (TC = 25oC)

-Continuous (TC = 100oC)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

- Derate above 25oC

Operating and Storage Temperature Range

*Drain current limited by maximum junction temperature

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2007 Fairchild Semiconductor Corporation

FDP80N06 N-Channel MOSFET

Drain to Source Breakdown Voltage

ID = 250A, VGS = 0V, TJ = 25oC

Zero Gate Voltage Drain Current

VDS = 60V, VGS = 0V

VDS = 48V, TC = 150oC

Gate to Body Leakage Current

VGS = 20V, VDS = 0V

Gate Threshold Voltage

VGS = VDS, ID = 250A

Static Drain to Source On Resistance

VGS = 10V, ID = 40A

VDS = 25V, ID = 40A

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain Miller Charge

VDD = 30V, ID = 80A

VDS = 48V, ID = 80A

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 80A

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, ISD = 80A

FDP80N06 N-Channel MOSFET

Package Marking and Ordering Information TC = 25oC unless otherwise noted

FDP80N06 N-Channel MOSFET

Typical Performance Characteristics

Figure 2. Transfer Characteristics

Figure 4. Body Diode Forward Voltage

Figure 5. Capacitance Characteristics

Ciss = Cgs + Cgd (Cds = shorted)

VGS, Gate-Source Voltage [V]

2. 250s Pulse Test

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.