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Kristian Sagmo
NTNU, 22. april 2013
Abstract
The distance d022 was measured to be 1.853 0.067 .
Introduction
The purpose of this report will be to briey summarize the observation of a multicrystalline silicone crystal using Bright Field (BF) and High resolution (HR) TEM
modes, as well as to exhibit a basic understanding of some of the physics involved
in the mechanisms of the microscope and basic observation theory. The rst TEM
microscope was invented by Max Knoll and Ernst Ruska in 1931 shoving promise of
higher resolutions than that possible with light. This remains one of the main benets of the instrument to date, being capable of resolutions down to around 0,05 nm
[2]. Problematically, lens imperfections leading to unwanted optical eects caused by
spherical and chromatic abberration, is now one of the main limiting factors of the
resoluton power of TEM.
For simplicity, no section regarding method will be included in this report, as it is
largely described here in the introduction and the theory section.
Theory
About TEM
TEM is a method of imaging using engergized electrons, oscillating with a specic
h
2m0 E(1 +
.
E
2m0 c2 )
(1)
Here, h is the planck constant, m0 the rest mass of an electron, c the speed of light
and E the energy of the accelerated electron. We may then begin to appreciate the
practicality of using a charged particle for imaging, as one may by applying a specic
voltage across the electron accelerator, produce probing particles with wavelengths
smaller than that of light.
As electrons are highly interactive particles, the material needs to be thin, 200
nm or less, to prevent too many scattering events in the sample. A specifc ray of
transmitted electrons may then be selected by the use of a specic aperture in the
back of the sample, usually after the electrons have been focused. This selction of
transmitted electrons denes the dierent imaging modes commonly used.
BF-TEM is among the most commonly used modes. It involves selecting only the
In a crystal structiure this provides an image of the diraction pattern formed by the
electrons, giving information of the alignment of the symmetry planes in the sample.
By selecting dierent incoming waves, tilting the sample, and selcting diracted waves,
one may for instance identify imperfections in a crystal structure, as well as identify
the dierent orientations in a multicrystalline structure.
a
,
h2 + k 2 + l2
(2)
where a is the lattice constant of the cubic planes. Further, the vector in the reciprocal
space indexed ghkl = hi a + ki a + li a is related with the real space distance by
1
,
| ghkl |
dhkl =
(3)
thus illustrating that the interplanar atomic spacings and the diraction pattern image is inversely related [1].
In indexing diraction patterns, dierent approaches may be used, but here preered
is the relationship between the ratio of the lengths between two diraction points and
their respective hkl values. By exploiting that tan 2 = 2 for very small angles and
thereby 2 = RLhkl , Braggs law gives
(4)
Rhkl dhkl = L.
The value Rhkl is the distance of the diraction point hkl from the origin, so again
this illustrates that the distance between diraction points in a diraction image is
inversely related to the real space between lattice planes in the crystal. Using the
above equation for dhkl one arrives at the desired equation
d2
h2 + k12 + l12
R12
.
= 22 = 12
2
R2
d1
h2 + k22 + l22
R1 R2
,
R1 R2
(5)
(6)
may be used as a check. Lastly to calculate the zone axis of an indexed diraction
pattern
i
R1 R2 = h1
h2
j
k1
k2
k
l1
l2
(7)
Results
Indexing of diraction patterns
For the diraction pattern shown in gure 1 , given that our silicone sample is a diamond crystal with a fcc Bravais lattice with a two atom basis, all visible points must
fulll Fhkl = 4f , meaning that h, k and l are all even or all odd. Furthermore, in
the image, R is measured R1 = R2 = 2 cm, so equation (5) = 1.The angle between
points gives cos 12 = 12 . Then, by method of trial and error the pattern was indexed
as illustrated, validated with equation (6). By equation (7) this corresponds to a zone
axis [111].
Figure 2: Diraction pattern image 2, with miller indexes, a 2-dim square Bravais lattice
Discussion
As a comparison to the measured value of d, by the given values of the lattice parameters a = b = c = 5.431 , the real space distances; d111 = 3.136 , d022 = 1.920 ,
In gure 4 the edges of the sample is displaying a dark rim. It is suscpected that
this is due to oxidation of the silicone, resulting in a disoriented atomic array close to
the edges. Further, in the indexing of the cubic diraction pattern, index 222 is seen
as an incident of double diraction, due to relative large thickness of the sample.
Conclusion
This exercise has contributed to the basic understanding of TEM, and the operations of
an TE- microscope. Also one has undergone training in miller indexing of diraction
patterns from a crystal, and gained an understanting of its theoretical use. The
distance d022 was measured to be 1.853 0.067 , wich may be used to descibe the
cubic lattice parametres a = b = c of the crystal.
References
[1] Hanne Kauko, TFY4220 Solid State Physics: Electron Diraction. NTNU January
24, 2013.
[2] Transmission electron microscope manufacturer FEI, An introduction to
electron microscopy. http://www.fei.com/resources/student-learning/
introduction-to-electron-microscopy/intro.aspx
[3] Wikipedia, Transmission electron microscopy. http://en.wikipedia.org/wiki/
Transmission_electron_microscopy
[4] Wikipedia, Crystal structure. http://en.wikipedia.org/wiki/Crystal_
structure