Documente Academic
Documente Profesional
Documente Cultură
Assignment
submitted to:
Md. Hasibul Alam
Assistant professor
submitted by:
MD.JUBAYER AL-MAHMUD
ID:1006164
L/T:4/1
Dept. of Electrical and Electronic Engineering
EEE 455
I. B RILLOUIN Z ONE
A. Brillouin Zone For BCC crystal
For
the
Brillouin
Zone
BrillouinzoneV iewerIX has been used.
demonstration
For FCC crystal the symmetry points are shown on figure 5,10,7,9,8,6. For demonstration BandStructureLabIX is
used.
II. I SO - ENERGY S URFACE C ALCULATION
A. GaAs
degeneracy number N=1
ml = 0.06653me
clc;
close all;
clear all;
h=6.626e-34;
e=1.6e-19
hReduced=h/(2*pi);
me=9.11e-31;
mlong=0.06653;
mTrans=0.06653;
N=1;
mC=N(2/3)*(mlong*mTrans2)(1/3);
E0=1.42;
a=5.654e-10;
del=(-1:.07:1);
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me)).*((kx.2+ky.2+kz.2)/mC);
E=E/e;
isosurface(kx,ky,kz,E,E0);
grid on;
xlabel('X');
EEE 455
Fig. 6. X
Fig. 7. L
ylabel('Y');
zlabel('Z');
title('GaAs Iso-energy surface');
B. Silicon
Degeneracy number N=6
ml = 0.9041me mt = 0.20061me where, me = 9.111031
As ml and mt are different constant energy surface will be
ellipsoidal.
MATLAB CODE:
clc;
close all;
clear all;
h=6.626e-34;
hReduced=h/(2*pi);
me=9.11e-31;
Fig. 8. W
Fig. 9. U
E0=0.25;
a=5.4306e-10;
del=(-1:0.05:1);
% X Axis
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((kx-pi*(a-1)).2)...
/.90+(ky.2+kz.2)/.20);
% Energy Formula
isosurface(kx,ky,kz,E,E0);
grid on;
xlabel('X');
ylabel('Y');
zlabel('Z');
title('Silicon Iso-energy Surface');
hold on;
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((kx+pi*(a-1)).2)...
/.90+(ky.2+kz.2)/.20);
EEE 455
Gamma
30
E (eV)
isosurface(kx,ky,kz,E,E0);
% y Axis
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((ky-pi*(a-1)).2)...
/.90+(kx.2+kz.2)/.20);
isosurface(kx,ky,kz,E,E0);
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((ky+pi*(a-1)).2)...
/.90+(kx.2+kz.2)/.20);
isosurface(kx,ky,kz,E,E0);
%z Axis
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((kz-pi*(a-1)).2)...
/.90+(ky.2+kx.2)/.20);
isosurface(kx,ky,kz,E,E0);
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((kz+pi*(a-1)).2)...
/.90+(ky.2+kx.2)/.20);
isosurface(kx,ky,kz,E,E0);
10
-10
0
10
E1
E2
E3
E4
E5
E6
E7
E8
E9
E10
E11
E12
20
E13
E14
E15
E16
E17
E18
k ((nm)1)
E19
E25
E20
E26
E21
E27
E22
E28
E23
E29
E24
E30
30
40
E31
E32
E33
E34
E35
E36
E37
E38
E39
E40
EEE 455
Gamma
Gamma
10
20
E (eV)
30
20
10
0
20
-10
E (eV)
0
E1
E2
E3
E4
E5
E6
E7
E8
30
wave Vector
E9
E17
E10
E18
E11
E19
E12
E20
E13
E21
E14
E22
E15
E23
E16
E24
40
E25
E26
E27
E28
E29
E30
E31
E32
E33
E34
E35
E36
E37
E38
E39
E40
10
E1
E2
E3
E4
E5
E6
E7
E8
E9
E10
20
E11
E12
E13
E14
E15
wave Vector
E16
E21
E17
E22
E18
E23
E19
E24
E20
E25
30
40
E26
E27
E28
E29
E30
E31
E32
E33
E34
E35
E36
E37
E38
E39
E40
A. Electron
1) Density of State effective Mass: EquationIX for desity
1
2
3
of effective mass of electron is mc = Vd (ml mt ) 3
Where Vd = Degeneracy number ml= Longitudinal mass of
electron mt= Transverse mass of electron
red rectangles of figure 16,17,18 produces the value of longitudinal and transverse effective mass of electron. Using the
equation above the density of sate effective mass for
1) Si:1.094 me
2) GaAs:0.06653 m
3) Ge: 0.8766 me
EEE 455
Bandgap Energy in eV
calculation provides,
Si Hole effective mass = 0.19 me
Ge Hole effective mass= 0.39 me
GaAs Hole effective mass= 0.4025 me
Assuming ml =mt=Hole effective mass Putting these values
3
we have Si Conductivity effective
in me,cond =
1
2
+
ml
mt
mass = 0.19 me
Ge Conductivity effective mass= 0.39 me
GaAs Conductivity effective mass= 0.4025 me
AT
from reference :IX is used
Relation E(g) = Eg(0) B+T
IX
and also Table 2.3
is used for Constants.Only points for
Si,GaAS and Ge are plotted on figure: 19.
Silicon
Gallium Arsenide
Germanium
1
0
MATLAB CODE
500
2500
3000
close all
clear all;
addpath('../lib');
% Si
a=0.391*10-3;
b=125;
Eg0=1.1557;
dT=10;
T_initial=0;
T_final=3000;
T=T_initial:dT:T_final
l=length(T)
Eg=zeros(1,l);
EgG=zeros(1,l);
Egx=zeros(1,l);
for i=1:l
Eg(i)=Eg0-a*T(i)2/(b+T(i));
end
figure(1)
plot(T,Eg)
xlabel('Temperature in K')
ylabel('Bandgap Energy in eV')
title('Temperature Dependence of Bandgap')
hold on
grid on
%GaAs
aG=0.5405*10-3;
bG=204;
EgG0=1.519;
for i=1:l
EgG(i)=EgG0-aG*T(i)2/(bG+T(i));
end
plot(T,EgG)
%%Ge
ax=0.6842*10-3;
bx=398;
Egx0=0.8893;
for i=1:l
Egx(i)=Egx0-ax*T(i)2/(bx+T(i));
end
plot(T,Egx)
legend('Silicon','Gallium Arsenide','Germanium')
opt.Colors = [
1,
0,
0;
0,
1,
0;
0,
0,
1;
];
opt.LineWidth = [2, 1, 1];
opt.LineStyle = {'-', '-', '-'};
opt.FileName = 'temp.eps';
setPlotProp(opt);
EEE 455
VIII. A PPENDIX
IX. R EFERENCE :
Effective mass(electron) for Silicon vs Temprature
1.www.nanohub.org
2.JoachIM
Piprek,Semiconductor
Optoelectronic
Devices:Introduction to Physics and Simulation
3.ecee.colorado.edu
4.D. Mark Riffe,Temperature dependence of silicon carrier
effective masses with application to femtosecond reflectivity
measurements.
0.5
0.45
0.4
0.35
0.3
0.25
500
1000
1500
2000
Temperature in K
2500
3000
MATLAB CODE:
clc;
close all;
clear all;
%for Si
KB= 1.38e-23
alpha=0.6/1.6e-19;
me0=0.26;
T=0:10:3000
l=length(T)
me=zeros(1,l)
for i=1:l
me(i)=me0*(1+5*alpha*KB*T(i));
end
plot(T,me)
xlabel('Temperature in K')
ylabel('Conductivity Effective mass M/Me')
title('Effective mass(electron) for Silicon vs Temprature')
grid on