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EEE 455

Hetero-junction and Compound Semiconductor

Assignment
submitted to:
Md. Hasibul Alam
Assistant professor
submitted by:
MD.JUBAYER AL-MAHMUD
ID:1006164
L/T:4/1
Dept. of Electrical and Electronic Engineering

EEE 455

I. B RILLOUIN Z ONE
A. Brillouin Zone For BCC crystal
For
the
Brillouin
Zone
BrillouinzoneV iewerIX has been used.

demonstration

Fig. 4. Brillouin Zone For FCC crystal

Fig. 1. Real space structure and unit cell

Fig. 2. Brillouin Zone For BCC crystal


Fig. 5. Gamma

B. Brillouin Zone For FCC crystal


mt = 0.06653me where, me = 9.11 1031 As ml and mt
are same ,the constant energy surface will be spherical.
MATLAB CODE:

Fig. 3. Real space structure and unit cell

For FCC crystal the symmetry points are shown on figure 5,10,7,9,8,6. For demonstration BandStructureLabIX is
used.
II. I SO - ENERGY S URFACE C ALCULATION
A. GaAs
degeneracy number N=1
ml = 0.06653me

clc;
close all;
clear all;
h=6.626e-34;
e=1.6e-19
hReduced=h/(2*pi);
me=9.11e-31;
mlong=0.06653;
mTrans=0.06653;
N=1;
mC=N(2/3)*(mlong*mTrans2)(1/3);
E0=1.42;
a=5.654e-10;
del=(-1:.07:1);
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me)).*((kx.2+ky.2+kz.2)/mC);
E=E/e;
isosurface(kx,ky,kz,E,E0);
grid on;
xlabel('X');

EEE 455

Fig. 6. X

Fig. 7. L

ylabel('Y');
zlabel('Z');
title('GaAs Iso-energy surface');

B. Silicon
Degeneracy number N=6
ml = 0.9041me mt = 0.20061me where, me = 9.111031
As ml and mt are different constant energy surface will be
ellipsoidal.
MATLAB CODE:
clc;
close all;
clear all;
h=6.626e-34;
hReduced=h/(2*pi);
me=9.11e-31;

Fig. 8. W

Fig. 9. U

E0=0.25;
a=5.4306e-10;
del=(-1:0.05:1);
% X Axis
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((kx-pi*(a-1)).2)...
/.90+(ky.2+kz.2)/.20);
% Energy Formula
isosurface(kx,ky,kz,E,E0);
grid on;
xlabel('X');
ylabel('Y');
zlabel('Z');
title('Silicon Iso-energy Surface');
hold on;
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((kx+pi*(a-1)).2)...
/.90+(ky.2+kz.2)/.20);

EEE 455

Fig. 12. Silicon iso-energy Surface


Fig. 10. K

3) Spin effect considered.


Band structure for Si,GaAs and Ge are shown on figure
13,14and 15 respectively.

Gamma

30

Fig. 11. Iso-energy Surface of GaAs


20

E (eV)

isosurface(kx,ky,kz,E,E0);
% y Axis
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((ky-pi*(a-1)).2)...
/.90+(kx.2+kz.2)/.20);

isosurface(kx,ky,kz,E,E0);
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((ky+pi*(a-1)).2)...
/.90+(kx.2+kz.2)/.20);
isosurface(kx,ky,kz,E,E0);
%z Axis
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((kz-pi*(a-1)).2)...
/.90+(ky.2+kx.2)/.20);
isosurface(kx,ky,kz,E,E0);
[kx,ky,kz]=meshgrid(2*pi*(a-1)*del,...
2*pi*(a-1)*del,2*pi*(a-1)*del);
E=((hReduced2)/(2*me*1.6e-19)).*(((kz+pi*(a-1)).2)...
/.90+(ky.2+kx.2)/.20);
isosurface(kx,ky,kz,E,E0);

III. BAND - STRUCTURE C ALCULATION


The BandstructureLabIX is used for the calculations.
1) No strain effect considered
2) 150 points used for the calculation

10

-10
0

10
E1
E2
E3
E4
E5
E6

E7
E8
E9
E10
E11
E12

20
E13
E14
E15
E16
E17
E18

Fig. 13. Silicon band-structure

k ((nm)1)
E19
E25
E20
E26
E21
E27
E22
E28
E23
E29
E24
E30

30

40
E31
E32
E33
E34
E35
E36

E37
E38
E39
E40

EEE 455

Gamma

Gamma

10

20

E (eV)

30
20
10
0
20

-10
E (eV)

0
E1
E2
E3
E4
E5
E6
E7
E8

30

wave Vector
E9
E17
E10
E18
E11
E19
E12
E20
E13
E21
E14
E22
E15
E23
E16
E24

40
E25
E26
E27
E28
E29
E30
E31
E32

E33
E34
E35
E36
E37
E38
E39
E40

Fig. 15. Ge band-structure

10
E1
E2
E3
E4
E5

E6
E7
E8
E9
E10

20
E11
E12
E13
E14
E15

wave Vector
E16
E21
E17
E22
E18
E23
E19
E24
E20
E25

30

40
E26
E27
E28
E29
E30

E31
E32
E33
E34
E35

E36
E37
E38
E39
E40

Fig. 14. GaAs band-structure

IV. E FFECTIVE M ASS CALCULATION


Figure 16,17 and 18 show the effective mass of electron and
hole for Si,GaAs adn Ge.
1) Green rectangles identify the hole effective mass.
2) Blue rectangles identify energy band gap
3) red rectangles identify the transverse and longitudinal
effective mass of electron.
V. D ENSITY OF STATE EFFECTIVE MASS AND
CONDUCTIVITY EFFECTIVE MASS

A. Electron
1) Density of State effective Mass: EquationIX for desity
1
2
3
of effective mass of electron is mc = Vd (ml mt ) 3
Where Vd = Degeneracy number ml= Longitudinal mass of
electron mt= Transverse mass of electron
red rectangles of figure 16,17,18 produces the value of longitudinal and transverse effective mass of electron. Using the
equation above the density of sate effective mass for
1) Si:1.094 me
2) GaAs:0.06653 m
3) Ge: 0.8766 me

Fig. 16. Effective mass: Silicon

2) Conductivity effective mass: Formula for conductivity


effective mass calculation can be found on IX.
3
me,cond =
1
2
+
ml
mt
Form the figure 16,17 and 18 and using the above equation
conductivity effective mass for:
1) Si:0.27 me
2) GaAs:0.06653 m
3) Ge: 0.119 me
B. Hole
1) Density of state effective mass: From IX we find the
3
3
2
2
2
equation for DOS effective mass for hole mh = (mhh
+mlh
)3
Where mlh=Light hole effective mass mhh=Heavy hole
effective
Average value of heavy hole and light hole effective mass:
silicon
mhh = 0.5302meandmlh = 0.17011me Germanium
mhh = 0.35719meandmlh = 0.04407me GaAs
mhh = 0.62421meandmlh = 0.07797me
using aforementioned equation:
1) Si = 0.5926 me
2) Ge= 0.36744 me
3) GaAs= 0.6424 me

EEE 455

Bandgap Energy in eV

Temperature Dependence of Bandgap

Fig. 17. Effective mass: GaAs

Fig. 18. Effective mass: GeE

calculation provides,
Si Hole effective mass = 0.19 me
Ge Hole effective mass= 0.39 me
GaAs Hole effective mass= 0.4025 me
Assuming ml =mt=Hole effective mass Putting these values
3
we have Si Conductivity effective
in me,cond =
1
2
+
ml
mt
mass = 0.19 me
Ge Conductivity effective mass= 0.39 me
GaAs Conductivity effective mass= 0.4025 me

VI. D ETERMINATION OF BAND G AP


3) For Si: we see its conduction band minima is at X point
and the valance band maxima is at point .The difference
is 1.13 eV which is less than Egap = 3.3985(figure: 16)
.therefore, The band gap is INDIRECT. Silicons Band Gap
= 1.13218 eV.
4) For GaAs: For GaAs we see its conduction band minima
is at point while the valance band maxima is also at .The
difference is 1.42 eV equal to the Egap=1.42eV. Gallium
Arsenides Band Gap= 1.42416 eV and band-gap is DIRECT.
5) For Ge: In case of Ge we see its conduction band minima is at L point while the valance band maxima is at .The
difference is 0.69 eV less Egap=0.81 eV value. Germaniums
Band Gap= 0.68091 eV and bandgap is INDIRECT
VII. D EPENDENCE OF BANDGAP AND E FFECTIVE M ASS
ON T EMPERATURE
2

AT
from reference :IX is used
Relation E(g) = Eg(0) B+T
IX
and also Table 2.3
is used for Constants.Only points for
Si,GaAS and Ge are plotted on figure: 19.

Silicon
Gallium Arsenide
Germanium

1
0

2) Conductivity effective mass: Form the figure 16,17,18.


For Ge
mhh= 0.1732 me and mlh=0.0482 me
For Si
mhh=0.2758 me and mlh=0.21409 me
For GaAs
mhh=0.37686 me and mlh=0.08339 me

MATLAB CODE

500

1000 1500 2000


Temperature in K

2500

3000

Fig. 19. Dependence of Bandgap on temperature

close all
clear all;
addpath('../lib');
% Si
a=0.391*10-3;
b=125;
Eg0=1.1557;
dT=10;
T_initial=0;
T_final=3000;
T=T_initial:dT:T_final
l=length(T)
Eg=zeros(1,l);
EgG=zeros(1,l);
Egx=zeros(1,l);
for i=1:l
Eg(i)=Eg0-a*T(i)2/(b+T(i));
end
figure(1)
plot(T,Eg)
xlabel('Temperature in K')
ylabel('Bandgap Energy in eV')
title('Temperature Dependence of Bandgap')
hold on
grid on
%GaAs
aG=0.5405*10-3;
bG=204;
EgG0=1.519;
for i=1:l
EgG(i)=EgG0-aG*T(i)2/(bG+T(i));
end
plot(T,EgG)
%%Ge
ax=0.6842*10-3;
bx=398;
Egx0=0.8893;
for i=1:l
Egx(i)=Egx0-ax*T(i)2/(bx+T(i));
end
plot(T,Egx)
legend('Silicon','Gallium Arsenide','Germanium')
opt.Colors = [
1,
0,
0;
0,
1,
0;
0,
0,
1;
];
opt.LineWidth = [2, 1, 1];
opt.LineStyle = {'-', '-', '-'};
opt.FileName = 'temp.eps';
setPlotProp(opt);

From the reference IX. me (T ) = me (0)(1 + 5KB T )


clc;

KB= Boltzman constant and is 0.6 /eV for Si.

EEE 455

VIII. A PPENDIX
IX. R EFERENCE :
Effective mass(electron) for Silicon vs Temprature

1.www.nanohub.org
2.JoachIM
Piprek,Semiconductor
Optoelectronic
Devices:Introduction to Physics and Simulation
3.ecee.colorado.edu
4.D. Mark Riffe,Temperature dependence of silicon carrier
effective masses with application to femtosecond reflectivity
measurements.

Conductivity Effective mass M/Me

0.5

0.45

0.4

0.35

0.3

0.25

500

1000

1500
2000
Temperature in K

2500

3000

Fig. 20. Dependence of Effective mass on temperature

MATLAB CODE:
clc;
close all;
clear all;
%for Si
KB= 1.38e-23
alpha=0.6/1.6e-19;
me0=0.26;
T=0:10:3000
l=length(T)
me=zeros(1,l)
for i=1:l
me(i)=me0*(1+5*alpha*KB*T(i));
end
plot(T,me)
xlabel('Temperature in K')
ylabel('Conductivity Effective mass M/Me')
title('Effective mass(electron) for Silicon vs Temprature')
grid on

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