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SuperSOT-3
C
SOT-223
Mark: 3SS
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMBTA28
3SS
SSOT 3L
PZTA28
A28
SOT-223 4L
Symbol
Value
Unit
VCEO
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
12
800
mA
-55 to +150
IC
TJ, TSTG
Parameter
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
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February 2015
Symbol
PD
RJA
Max.
Parameter
(3)
Unit
PZTA28(4)
MMBTA28
350
1000
mW
2.8
8.0
mW/C
357
125
C/W
Notes:
3. Device mounted on FR-4 PCB 36mm 18mm 1.5mm; mounting pad for the collector lead minimum 6cm2.
4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics(5)
Values are at TA = 25C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
V(BR)CES
IC = 100 A, VBE = 0
80
V(BR)CBO
IC = 100 A, IE = 0
80
V(BR)EBO
12
IE = 10 A, IC = 0
ICBO
VCB = 60 V, IE = 0
100
nA
ICES
VCE = 60 V, VBE = 0
500
nA
IEBO
VEB = 10 V, IC = 0
100
nA
hFE
DC Current Gain
10000
1.2
1.5
Base-Emitter On Voltage
2.0
Output Capacitance
VCB = 1.0 V, IE = 0,
f = 1.0 MHz
VBE(on)
Cobo
10000
IC = 10 mA, IB = 0.01 mA
VCE(sat)
fT
125
V
V
MHz
8.0
pF
Note:
5. Pulse test: pulse width 300 s, duty cycle 2%.
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2
Thermal Characteristics
100
1.6
V CE = 5V
125 C
80
1.2
60
0.8
25 C
40
0
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
0.2
= 1000
1.6
- 40 C
1.2
25 C
125 C
0.8
0.4
25 C
10
100
I C - COLLECTOR CURRE NT (mA)
10
100
I C - COLLECTOR CURRE NT (mA)
1000
1000
2
VCE = 5V
1.6
- 40 C
1.2
25 C
125 C
0.8
0.4
0
10
100
I C - COLLECTOR CURRE NT (mA)
1000
100
f = 1.0 MHz
V CB = 80V
20
10
CAPACITANCE (pF)
125 C
- 40 C
0.4
- 40 C
20
= 1000
0.1
0.01
25
50
75
100
T A - AMBIE NT TEMP ERATURE ( C)
C ib
10
C ob
2
0.1
125
10
100
V CE - COLLECTOR VOLTAGE(V)
15
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3
400
V ce = 5V
300
200
100
0
1
10
20
50
100 200
150200
300
114.2
114
113.8
113.6
113.4
113.2
113
112.8
0.1
10
100
RESISTANCE (k )
1000
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
25
50
75
100
o
TEMPERATURE ( C)
125
150
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4
Physical Dimensions
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5
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6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
F-PFS
FRFET
SM
Global Power Resource
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
MotionGrid
MTi
MTx
MVN
mWSaver
OptoHiT
OPTOLOGIC
AccuPower
AttitudeEngine
Awinda
AX-CAP*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED
Dual Cool
EcoSPARK
EfficientMax
ESBC
Fairchild
Fairchild Semiconductor
FACT Quiet Series
FACT
FAST
FastvCore
FETBench
FPS
OPTOPLANAR
PowerTrench
PowerXS
Programmable Active Droop
QFET
QS
Quiet Series
RapidConfigure
TinyBoost
TinyBuck
TinyCalc
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT*
SerDes
UHC
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS
Xsens
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73
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