TK6A65D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(-MOS VII)

TK6A65D
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: RDS (ON) = 0.95 (typ.)

High forward transfer admittance: Yfs = 4.0 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 650 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

650

Gate-source voltage

VGSS

30

DC

(Note 1)

ID

Pulse

(Note 1)

IDP

24

Drain power dissipation (Tc = 25C)

PD

45

Single pulse avalanche energy

(Note 2)

EAS

281

mJ

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

EAR

4.5

mJ

JEITA

Channel temperature

Tch

150

TOSHIBA

Storage temperature range

Tstg

55 to 150

Weight : 1.7 g (typ.)

Drain current

A
1: Gate
2: Drain
3: Source

JEDEC

SC-67
2-10U1B

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.78

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Please use devices on conditions that the channel temperature is below 150C.

Note 2: VDD = 90 V, Tch = 25C (initial), L = 13.8 mH, RG = 25 , IAR = 6 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.

Start of commercial production

2012-01

2013-11-01

TK6A65D
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 30 V, VDS = 0 V

Drain cut-off current

IDSS

VDS = 650 V, VGS = 0 V

10

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

650

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Gate threshold voltage

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 3 A

0.95

1.11

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3 A

1.0

4.0

Input capacitance

Ciss

1050

Reverse transfer capacitance

Crss

Output capacitance

Coss

100

25

60

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

tr

Turn-on time

ID = 3 A

10 V
VGS
0V

ton

RL = 67

50

Switching time
Fall time

VOUT

tf

pF

ns

10

75

20

13

VDD 200 V
Turn-off time

toff

Duty 1%, tw = 10 s

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD 400 V, VGS = 10 V, ID = 6 A

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

(Note 1)

IDRP

24

Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)

VDSF

IDR = 6 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 6 A, VGS = 0 V,

1300

ns

Reverse recovery charge

Qrr

dIDR/dt = 100 A/s

10

Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

K6A65D

Part No.
(or abbreviation code)
Lot No.

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment

Note 4

2013-11-01

TK6A65D
ID VDS
COMMON SOURCE
Tc = 25C
PULSE TEST

10

10

6.25
8

(A)

ID VDS
10

DRAIN CURRENT ID

DRAIN CURRENT ID

(A)

5.75

2
5.5
1
VGS = 5 V
0
0

DRAIN-SOURCE VOLTAGE

VDS

6.75
6.5

6.25
4
6
2

5.5
VGS = 5 V

0
0

10

10

(V)

20

VDS (V)

COMMON SOURCE
VDS = 20 V
PULSE TEST

4
25
2

100

0
0

Tc = 55C

GATE-SOURCE VOLTAGE

VGS

10

10

VDS

50

(V)

COMMON SOURCE
Tc = 25C
PULSE TEST

6
6

4
3
2

ID = 1.5 A

0
0

12

16

GATE-SOURCE VOLTAGE

(V)

Yfs ID

VGS

20

(V)

RDS (ON) ID

100

10
COMMON SOURCE
VDS = 10 V
PULSE TEST

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()

FORWARD TRANSFER ADMITTANCE

Yfs (S)

40

VDS VGS

DRAIN-SOURCE VOLTAGE

(A)
DRAIN CURRENT ID

30

DRAIN-SOURCE VOLTAGE

ID VGS
10

COMMON SOURCE
Tc = 25C
PULSE TEST

10
Tc = 55C

100

25

0.1
0.1

10

DRAIN CURRENT ID

COMMON SOURCE
Tc = 25C
PULSE TEST

0.1
0.1

100

(A)

VGS = 10 V

10

DRAIN CURRENT ID

100

(A)

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TK6A65D
RDS (ON) Tc
COMMON SOURCE
VGS = 10 V
PULSE TEST

1.8

3
ID = 1.5 A

1.2

0.6

COMMON SOURCE
Tc = 25C
PULSE TEST

1
10, 15
5

3
40

40

80

CASE TEMPERATURE

120

Tc

0.1
0

160

(C)

0.3

VGS = 0 V
0.6

CAPACITANCE VDS

GATE THRESHOLD VOLTAGE

Vth (V)

Coss

Crss

COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C
1

VDS

COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80

100

10

(V)

40

VDS (V)
DRAIN-SOURCE VOLTAGE

40

30

20

10

CASE TEMPERATURE

80

120

Tc

160

(C)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

50

80

40

CASE TEMPERATURE

PD Tc

40

120

Tc

160

(C)

500

20

VDS

400

16
200
12

300

VDD = 100 V
400
8

200
VGS
100

12

COMMON SOURCE
ID = 6 A
Tc = 25C
PULSE TEST

18

TOTAL GATE CHARGE

0
30

24

Qg

(V)

CAPACITANCE

(pF)

Ciss

DRAIN-SOURCE VOLTAGE

DRAIN POWER DISSIPATION

PD (W)

(V)

Vth Tc

100

0
0

VDS

1.5

1000

1
0.1

1.2

DRAIN-SOURCE VOLTAGE

10000

10

0.9

VGS

0
80

GATE-SOURCE VOLTAGE

2.4

IDR VDS
10

DRAIN REVERSE CURRENT

IDR (A)

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( )

(nC)

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TK6A65D

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty = 0.5
0.2

0.1

0.1
0.05
PDM

0.02
SINGLE PULSE

0.01

0.01

Duty = t/T
Rth (ch-c) = 2.78 C/W
0.001
10

100

1m

10 m

PULSE WIDTH

100 m

10

tw (s)

EAS Tch

SAFE OPERATING AREA

100

400

100 s *

(A)

10 ID max (continuous)

ID

1 ms *

DRAIN CURRENT

1
DC operation
Tc = 25C

AVALANCHE ENERGY
EAS (mJ)

ID max (pulsed) *

0.1

PULSE Tc = 25C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.

0.001
0.1

240

160

80

0
25

*: SINGLE NONREPETITIVE
0.01

320

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL)

Tch(C)
VDSS max

10

DRAIN-SOURCE VOLTAGE

100

VDS

15 V

1000

(V)

BVDSS
IAR

15 V
VDD

TEST CIRCUIT
RG = 25
VDD = 90 V, L = 13.8 mH

VDS

WAVEFORM
AS =

1
B VDSS

L I2
B

V
VDSS
DD

2013-11-01

TK6A65D
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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Do not use or otherwise make available Product or related software or technology for any military purposes, including without
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2013-11-01