Documente Academic
Documente Profesional
Documente Cultură
Drive Applications
Kohei Shirabe, Mahesh Swamy, Jun-Koo Kang, and
Masaki Hisatsune
I.
issues.
wave
filters are
employed.
INTRODUCTION
inductor and filter capacitor. The size and cost of the output
materials
with
different
chemical
magnetic
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Section III.
II.
However, it is
voltage Si device at the input and a normally-on highvoltage GaN HEMT at the output in a cascode form. The
combined device is normally-off having a gate threshold of
+2.1V (typical) at 1mA drain current and a drain leakage of
10A (typical) at a gate-source voltage (VGS) of 0V and
drain-source voltage (VDS) of 600V. The structure of the
hybrid HEMT module employed is shown in Fig. 1.
A. Turn ON Characteristics
The circuit used for studying the switching characteristics
The design
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Turn ON
Vds(V)
15
Iout(A)
12
300
200
100
-100
8.94
solution will be to simply apply zero volts so that the gatesource junction is shorted with the gate resistance in the
circuit.
-3
8.98
9.02
9.06
9.1
9.14
500
400
12
switch. Fig. 3 also shows that the turn ON v/t for the
300
200
100
Vds(V)
15
Iout(A)
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-100
-3
8.3
8.32
8.34
8.36
8.38
8.4
HEMT device, it has low losses during turn OFF and is well
III.
Given the fact that high speed switches that can process
efficiently.
turn OFF with little power loss. The body diode of the
loss sine wave filter can yield drive systems that are more
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5.00
4.00
Vout / Vin
4.50
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
1.00E+01
terminals.
1.00E+02
1.00E+03
1.00E+04
1.00E+05
1.00E+06
1.00E+07
1.00E+08
Frequency (Hz)
(b)
Fig. 5: (a) Schematic of an output LC filter for PWM filtering; (b)
Transfer function of the LC output filter with a load. Red: fc = 3
kHz and fr = 827Hz; Brown: fc = 100 kHz and fr = 25 kHz
The resonance
1
fr =
2 LF CF
(1)
some damping.
i.e. fout << fr << fc. Since it is now possible to use a high
least five to seven times the resonant frequency of the low pass
filter yields optimum results.
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the GaN based inverter was operated with a sine wave filter
IV.
A. Test Results
Efficiency test results are given in Table 1 for GaN based
kHz. Both the Si based drive and the GaN based drives were
Pin is the
Fig. 6: Schematic of the test setup for the GaN based drive.
Fig. 7: Photograph of GaN module and inverter with the GaN module. Sample shown was used for the test. Electrical specifications:
Vce = 600[V], Output current Io=14[A], 6-in-1 module.
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Fig. 8: Schematic of the test setup for the Si based drive operating with a carrier frequency of 15 kHz.
Table 1: Measured efficiency for GaN based drive
GaN
INPUT
OUTPUT
Power
Efficiency
Vdc[V] Idc[A] Vo[V]
Output
Pin[kW] Po[kW] Pm[kW] Drive
Motor
System
Output
target
(Vuv,Vvw,V current
Efficiency
efficiency
Efficiency
No Load 325.6 0.915
228.61
4.038
0.298 0.279 0.104
93.64
37.43
35.05
0.4 323.7 1.349
226.98
4.087
0.437 0.417 0.269
95.58
64.36
61.51
0.6 321.2 1.901
224.74
4.208
0.611 0.591 0.403
96.73
68.19
65.95
0.8 319.2 2.572
222.92
4.441
0.821 0.800 0.612
97.34
76.51
74.47
1.0 318.0 3.246
221.71
4.750
1.033 1.009 0.791
97.71
78.36
76.57
1.2 316.7 3.908
220.44
5.102
1.239 1.212 0.970
97.87
80.01
78.30
1.4 315.9 4.497
219.46
5.451
1.421 1.392 1.134
97.92
81.47
79.77
1.6 314.5 5.202
218.01
5.893
1.637 1.603 1.343
97.96
83.75
82.04
1.8 314.5 5.830
217.56
6.328
1.834 1.797 1.507
97.98
83.88
82.19
2.0 312.8 6.529
212.98
6.851
2.043 2.000 1.686
97.91
84.30
82.54
Table 2: Measured efficiency for Si-IGBT drive
Si-IGBT
Output
target
No Load
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INPUT
OUTPUT
Power
Efficiency
Vdc[V] Idc[A] Vo[V]
Output
Pin[kW] Po[kW] Pm[kW] Drive
Motor
System
(Vuv,Vvw,V current
Efficiency
efficiency
Efficiency
325.3 1.221
228.09
4.071 0.397 0.363
0.119
93.67
32.90
30.82
324.8 1.426
227.72
4.106 0.463 0.429
0.194
94.51
45.25
42.77
322.0 1.998
225.23
4.220 0.644 0.608
0.358
95.96
58.88
56.50
321.9 2.574
224.49
4.433 0.829 0.792
0.537
96.69
67.83
65.58
320.7 3.301
222.47
4.759 1.059 1.020
0.761
97.22
74.61
72.54
319.0 3.950
220.41
5.105 1.261 1.220
0.940
97.51
77.06
75.14
318.2 4.691
219.06
5.564 1.493 1.449
1.134
97.69
78.28
76.47
317.4 5.250
218.23
5.946 1.666 1.621
1.283
97.86
79.15
77.45
316.3 5.912
217.18
6.403 1.870 1.822
1.477
97.95
81.07
79.40
314.7 6.588
215.88
6.884 2.074 2.022
1.656
97.98
81.89
80.24
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98.5
90.0
98.0
80.0
97.5
System Efficiency Pm/Pin[%]
70.0
97.0
96.5
96.0
95.5
95.0
94.5
50.0
40.0
30.0
20.0
Si-IGBT
94.0
60.0
Si-IGBT
GaN
GaN
10.0
93.5
0.0
93.0
0.0
0.5
1.0
1.5
0.0
2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
(a)
(b)
Fig. 9: (a) Efficiency of inverter with respect to output electrical power (without motor efficiency); (b) System efficiency (mechanical output
power to electrical input power) as a function of mechanical output power
V.
CONCLUSIONS
in the sine wave filter is much lower than the extra losses
REFERENCES
[1]
[2]
[3]
[4]
[5]
[6]
the GaN based VFD system is much better than that for the
Si IGBT based VFD system.
Further, GaN based drive with an output sine wave
filter has better efficiency compared to the Si based drive
[7]
[8]
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