FDP 2614

FDP2614
N-Channel PowerTrench MOSFET
200 V, 62 A, 27 m
Features
General Description
RDS(on) = 22.9 m ( Typ.)@ VGS = 10 V, ID = 31 A
This N-Channel MOSFET is producedusing Fairchild Semiconductors advanced PowerTrench process that has been tailored to minimize the on-state resistance while maintaining
superior switching performance.
Fast Switching Speed

Low Gate Charge
Applications
High Performance Trench technology for Extremely Low

RDS(on)
Consumer Appliances
High Power and Current Handing Capability
Synchronous Rectification
RoHS Compliant
Battery Protection Circuit

Motor Drives and Uninterruptible Power Supplies
D
GD
S
TO-220
S
Absolute Maximum Ratings

Symbol
TC = 25C unless otherwise noted
Parameter
VDS
Drain-Source Voltage
FDP2614
Unit
200
30
62
39.3
A
A
(Note 1)
see Figure 9
145
mJ
VGS
Gate-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)

- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
(Note 2)
(Note 3)
dv/dt
Peak Diode Recovery dv/dt
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds
(TC = 25C)
- Derate above 25C
4.5
V/ns
260
2.1
W
W/C
-55 to +150
300
FDP2614
Unit
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case, Max.
0.48
C/W
RJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
C/W
2007 Fairchild Semiconductor Corporation

FDP2614 Rev. C3
www.fairchildsemi.com
FDP2614 N-Channel PowerTrench MOSFET
October 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP2614
FDP2614
TO-220
Tube
N/A
50 units
Electrical Characteristics
Symbol
TC = 25C unless otherwise noted
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A, TJ = 25C
200
--
--
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250A, Referenced to 25C
--
0.2
--
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 200V, VGS = 0V

VDS = 200V, VGS = 0V, TJ = 125C
---
---
10
500
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
4.0
5.0
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
RDS(on)
Static Drain-Source On-Resistance
VGS = 10V, ID = 31A
--
22.9
27
gFS
Forward Transconductance
VDS = 10V, ID = 31A
--
72
--
--
5435
7230
pF
--
505
675
pF
--
110
165
pF
--
77
165
ns
--
284
560
ns
--
103
220
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V

f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100V, ID = 62A

VGS = 10V, RGEN = 25
(Note 4)
VDS = 100V, ID = 62A

VGS = 10V
(Note 4)
--
162
335
ns
--
76
99
nC
--
35
--
nC
--
18
--
nC
--
--
62
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
186
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 62A
--
--
1.2
trr
Reverse Recovery Time
145
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 62A

dIF/dt =100A/s
--
Qrr
--
0.81
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 62A, di/dt 100A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics

FDP2614 Rev. C3
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics

1000
V GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
ID,Drain Current[A]
ID,Drain Current[A]
500
10
* Notes :
1. V DS = 10V
2. 250 s Pulse Test
100
o
150 C
10
o
-55 C
* Notes :
1. 250 s Pulse Test
25 C
1
0.1
2. T C = 25 C
1
V DS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Drain

Current and Gate Voltage
0.06
1000
IDR, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
0.05
VGS = 10V
0.03
VGS = 20V
0.02
* Notes :
1. VGS = 0V
2. ID = 250 A
100
50
100
150
ID, Drain Current [A]
10
1
0.2
200
VGS, Gate-Source Voltage [V]
Capacitances [pF]
C oss
* Note:
1. VGS = 0V
2. f = 1MHz
1
10
V DS, Drain-Source Voltage [V]

FDP2614 Rev. C3
1.0
1.2
V DS = 40V
6000
0
0.1
0.8
10
C iss
C rss
0.6
Figure 6. Gate Charge Characteristics
C iss = C gs + C gd ( C ds = shorted)
C oss = C ds + C gd
C rss = C gd
3000
0.4
V SD , Source-Drain voltage [V]
Figure 5. Capacitance Characteristics

9000
T A = 150 C
T A = 25 C
0.015
0
4
6
V GS ,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
* Note : T J = 25 C
0.04
V DS = 160V
30
V DS = 100V
* Note : ID = 62A
20
40
60
80
Q g , Total Gate Charge [nC]
100
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation vs.

Temperature
Figure 8. On-Resistance Variation vs. Temperature

3.0
rDS(on), [Normalized]
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 250 A
-50
0
50
100
o
T J, Junction Temperature [ C]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.5
1.0
* Notes :
1. VGS = 10V
2. ID = 31A
0.5
-50
0
50
100
150
o
TJ, Junction Temperature [ C ]
200
Figure 10. Maximum Drain Current vs. CaseTemperature
1000
70
60
100
100 s
2.0
0.0
-100
150
Figure 9. Maximum Safe Operating Area
1ms
10
10 ms
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
50
40
30
20
0.1
1. TC = 25 C
10
0.01
2.5
2. TJ = 150 C
3. Single Pulse
10
100
VDS, Drain-Source Voltage [V]
0
25
400
50
75
100
125
o
TC, Case Temperature [ C]
150
ZJC(t), Thermal Response [oC/W]
Figure 11. Transient Thermal Response Curve

10
0.5
10
-1
0.2
PDM
0.1
t1
0.05
10
-2
0.02
0.01
t2
* Notes :
o
1. Z JC(t) = 0.48 C/W Max.

2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z JC(t)
Single pulse
10
-3
10
-5
10
-4
-3
10
10
-2
-1
10
10
10
Rectangular Pulse Duration [sec]

FDP2614 Rev. C3
Typical Performance Characteristics (Continued)
Figure 12. Gate Charge Test Circuit & Waveform
50K
50K
200nF
200n
F
12V
VGS
Same
Same T
Ty
ype
as DU
DUT
T
Qg
300nF
300n
F
VDS
VGS
Qgs
Qgd
DUT
DU
T
IG = const.
Charrge
Cha
Figure 13. Resistive Switching Test Circuit & Waveforms

VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
DUT
VGS
10%
10%
td(on
d( on))
tr
td(o
d( of f)
t on
t of
offf
tf
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDS
DSS
S - VDD
L
BVDS
DSS
S
IAS
ID
RG
VGS
VDD
ID (t)
tp

FDP2614 Rev. C3
VDS (t)
VDD
DUT
tp
Ti
Tim
me
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
Driver
Driv
er
RG
VGS
VGS
( Driver
Driver )
I SD
( DUT )
Same T
Same
Ty
ype
as DUT
VDD
dv/dt cont
ntrrolled b
byy RG
ISD con
onttrol
ollled by pu
pullse pe
perriod
Gate P
Pul
ulsse W idth
ul
D = -------------------------Gate
Ga
te Pu
Pullse Pe
Perriod
10V
10
V
IFM , Body
Body Di
Diod
ode
e Fo
Forward Cu
Curr
rren
entt
di/d
di
/dtt
IRM
Body
Bo
dy D
Diiod
ode
e Re
Reverse C
Cu
urren
entt
VDS
( DUT )
Body
Bo
dy Di
Diod
ode
e Recov
cove
ery dv
dv/d
/dtt
VSD
VDD
Body D
Body
Diiode
For
Forw
ward V
Vol
olttag
age
e Drop
Drop

FDP2614 Rev. C3
Mechanical Dimensions
TO-220 3L
Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
Dimension in Millimeters
FDP2614 Rev. C3
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FDP2614 Rev. C3
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock
F-PFS
AccuPower
FRFET
AX-CAP*
*
SM
BitSiC
Global Power Resource
PowerTrench
GreenBridge
PowerXS
Build it Now
TinyBoost
Green FPS
Programmable Active Droop
CorePLUS
TinyBuck
Green FPS e-Series

QFET
CorePOWER
TinyCalc
QS
Gmax
CROSSVOLT
TinyLogic
Quiet Series
GTO
CTL
TINYOPTO
RapidConfigure
IntelliMAX
Current Transfer Logic
TinyPower
ISOPLANAR
DEUXPEED
TinyPWM
Dual Cool
Marking Small Speakers Sound Louder
TinyWire
EcoSPARK
Saving our world, 1mW/W/kW at a time
and Better
TranSiC
EfficentMax
SignalWise
MegaBuck
TriFault Detect
ESBC
SmartMax
MICROCOUPLER
TRUECURRENT*
SMART START
MicroFET
SerDes
Solutions for Your Success
MicroPak
SPM
MicroPak2
Fairchild
STEALTH
MillerDrive
Fairchild Semiconductor
UHC
SuperFET
MotionMax
FACT Quiet Series
Ultra FRFET
SuperSOT-3
mWSaver
FACT
UniFET
SuperSOT-6
OptoHiT
FAST
VCX
SuperSOT-8
OPTOLOGIC
FastvCore
VisualMax
OPTOPLANAR
SupreMOS
FETBench
VoltagePlus
SyncFET
FPS
XS

FDP 2614

Încărcat de

Informații document

Titlu original

Drepturi de autor

Formate disponibile

Partajați acest document

Partajați sau inserați document

Opțiuni de partajare

Vi se pare util acest document?

Este necorespunzător acest conținut?

Drepturi de autor:

Formate disponibile

FDP 2614

Încărcat de

Drepturi de autor:

Formate disponibile

FDP2614

N-Channel PowerTrench MOSFET

RDS(on) = 22.9 m ( Typ.)@ VGS = 10 V, ID = 31 A

Fast Switching Speed

High Performance Trench technology for Extremely Low

High Power and Current Handing Capability

Battery Protection Circuit

Absolute Maximum Ratings

TC = 25C unless otherwise noted

- Continuous (TC = 25C)

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

2007 Fairchild Semiconductor Corporation

FDP2614 N-Channel PowerTrench MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250A, TJ = 25C

Breakdown Voltage Temperature

ID = 250A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 200V, VGS = 0V

Gate-Body Leakage Current, Forward

VGS = 30V, VDS = 0V

Gate-Body Leakage Current, Reverse

VGS = -30V, VDS = 0V

Gate Threshold Voltage

VDS = VGS, ID = 250A

Static Drain-Source On-Resistance

VGS = 10V, ID = 31A

VDS = 10V, ID = 31A

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDD = 100V, ID = 62A

VDS = 100V, ID = 62A

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

VGS = 0V, IS = 62A

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, IS = 62A

2007 Fairchild Semiconductor Corporation

FDP2614 N-Channel PowerTrench MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Drain

IDR, Reverse Drain Current [A]

VGS, Gate-Source Voltage [V]

2007 Fairchild Semiconductor Corporation

Figure 6. Gate Charge Characteristics

V SD , Source-Drain voltage [V]

Figure 5. Capacitance Characteristics