List of Semiconductor Materials - Wikipedia, The Free Encyclopedia

7/29/2015
ListofsemiconductormaterialsWikipedia,thefreeencyclopedia
Listofsemiconductormaterials
FromWikipedia,thefreeencyclopedia
Semiconductormaterialsarenominallysmallbandgapinsulators.Thedefiningpropertyofasemiconductor
materialisthatitcanbedopedwithimpuritiesthatalteritselectronicpropertiesinacontrollableway.
Becauseoftheirapplicationinthecomputerandphotovoltaicindustryindevicessuchastransistors,lasers
andsolarcellsthesearchfornewsemiconductormaterialsandtheimprovementofexistingmaterialsisan
importantfieldofstudyinmaterialsscience.
Mostcommonlyusedsemiconductormaterialsarecrystallineinorganicsolids.Thesematerialsareclassified
accordingtotheperiodictablegroupsoftheirconstituentatoms.
Differentsemiconductormaterialsdifferintheirproperties.Thus,incomparisonwithsilicon,compound
semiconductorshavebothadvantagesanddisadvantages.Forexample,galliumarsenide(GaAs)hassixtimes
higherelectronmobilitythansilicon,whichallowsfasteroperationwiderbandgap,whichallowsoperationof
powerdevicesathighertemperatures,andgiveslowerthermalnoisetolowpowerdevicesatroomtemperature
itsdirectbandgapgivesitmorefavorableoptoelectronicpropertiesthantheindirectbandgapofsiliconitcan
bealloyedtoternaryandquaternarycompositions,withadjustablebandgapwidth,allowinglightemissionat
chosenwavelengths,andallowinge.g.matchingtowavelengthswithlowestlossesinopticalfibers.GaAscan
bealsogrowninasemiinsulatingform,whichissuitableasalatticematchinginsulatingsubstrateforGaAs
devices.Conversely,siliconisrobust,cheap,andeasytoprocess,whereasGaAsisbrittleandexpensive,and
insulationlayerscannotbecreatedbyjustgrowinganoxidelayerGaAsisthereforeusedonlywheresiliconis
notsufficient.[1]
Byalloyingmultiplecompounds,somesemiconductormaterialsaretunable,e.g.,inbandgaporlattice
constant.Theresultisternary,quaternary,orevenquinarycompositions.Ternarycompositionsallowadjusting
thebandgapwithintherangeoftheinvolvedbinarycompoundshowever,incaseofcombinationofdirectand
indirectbandgapmaterialsthereisaratiowhereindirectbandgapprevails,limitingtherangeusablefor
optoelectronicse.g.AlGaAsLEDsarelimitedto660nmbythis.Latticeconstantsofthecompoundsalsotend
tobedifferent,andthelatticemismatchagainstthesubstrate,dependentonthemixingratio,causesdefectsin
amountsdependentonthemismatchmagnitudethisinfluencestheratioofachievableradiative/nonradiative
recombinationsanddeterminestheluminousefficiencyofthedevice.Quaternaryandhighercompositions
allowadjustingsimultaneouslythebandgapandthelatticeconstant,allowingincreasingradiantefficiencyat
widerrangeofwavelengthsforexampleAlGaInPisusedforLEDs.Materialstransparenttothegenerated
wavelengthoflightareadvantageous,asthisallowsmoreefficientextractionofphotonsfromthebulkofthe
material.Thatis,insuchtransparentmaterials,lightproductionisnotlimitedtojustthesurface.Indexof
refractionisalsocompositiondependentandinfluencestheextractionefficiencyofphotonsfromthe
material.[2]
Contents
1Typesofsemiconductormaterials
2Tableofsemiconductormaterials
3Tableofsemiconductoralloysystems
4Seealso
5References
Typesofsemiconductormaterials
GroupIVelementalsemiconductors
https://en.wikipedia.org/wiki/List_of_semiconductor_materials
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GroupIVcompoundsemiconductors
GroupVIelementalsemiconductors
IIIVsemiconductors(Seealso:Template:IIIVcompounds):Crystallizingwithhighdegreeof
stoichiometry,mostcanbeobtainedasbothntypeandptype.Manyhavehighcarriermobilitiesand
directenergygaps,makingthemusefulforoptoelectronics.
IIVIsemiconductors:usuallyptype,exceptZnTeandZnOwhichisntype
IVIIsemiconductors
IVVIsemiconductors
IVVIsemiconductors
VVIsemiconductors
IIVsemiconductors
IIIIVI2semiconductors
Oxides
Layeredsemiconductors
Magneticsemiconductors
Organicsemiconductors
Chargetransfercomplexes
Others
Tableofsemiconductormaterials
Group
IV
IV
Elem.
Material
Diamond
Silicon
Formula
Si
Band
gap
(eV)
5.47[3][4]
1.12[3][4]
Gaptype
Description
indirect
Excellentthermal
conductivity.
Superiormechanical
andoptical
properties.
Extremelyhigh
mechanicalquality
factor.[5]
indirect
Usedinconventional
crystallinesilicon(c
Si)solarcells,andin
itsamorphousform
asamorphoussilicon
(aSi)inthinfilm
solarcells.Most
common
semiconductor
materialin
photovoltaics
dominates
worldwidePV
MARKET easy
tofabricategood
electricaland
mechanical
properties.Forms
highqualitythermal
oxideforinsulation
purposes.
Usedinearlyradar
detectiondiodesand
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firsttransistors
requireslowerpurity
thansilicon.A
substrateforhigh
efficiency
multijunction
photovoltaiccells.
Verysimilarlattice
constanttogallium
arsenide.High
puritycrystalsused
forgamma
spectroscopy.May
growwhiskers,
whichimpair
reliabilityofsome
devices.
0.67[3][4]
indirect
Graytin,Sn Sn
0.00,[6]
0.08[7]
indirect
Lowtemperature
allotrope(diamond
cubiclattice).
Silicon
carbide,3C
SiC
SiC
2.3[3]
indirect
usedforearlyyellow
LEDs
IV
Silicon
carbide,4H
SiC
SiC
3.3[3]
indirect
IV
Silicon
carbide,6H
SiC
SiC
3.0[3]
indirect
VI
Sulfur,S
S8
2.6[8]
VI
Grayselenium Se
1.74
VI
Tellurium
0.33
IIIV
Boronnitride,
BN
cubic
6.36[9]
indirect
potentiallyusefulfor
ultravioletLEDs
IIIV
Boronnitride,
BN
hexagonal
5.96[9]
quasidirect
potentiallyusefulfor
ultravioletLEDs
IIIV
Boronnitride
nanotube
BN
~5.5
IIIV
Boron
phosphide
BP
Boron
arsenide
Boron
arsenide
IV
Germanium
IV
IV
IIIV
IIIV
Ge
Te
BAs
B12As2
1.5
3.47
usedforearlyblue
LEDs
Usedinselenium
rectifiers.
indirect
indirect
Resistanttoradiation
damage,possible
applicationsin
betavoltaics.
indirect
damage,possible
applicationsin
betavoltaics.
Piezoelectric.Not
usedonitsownasa
semiconductorAlN
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IIIV
Aluminium
nitride
IIIV
Aluminium
phosphide
AlP
2.45[4]
indirect
IIIV
Aluminium
arsenide
AlAs
2.16[4]
indirect
IIIV
Aluminium
antimonide
AlSb
1.6/2.2[4]
indirect/direct
IIIV
IIIV
Gallium
nitride
Gallium
phosphide
AlN
6.28[3]
direct
GaN
GaP
3.44[3][4]
2.26[3][4]
closeGaAlN
possiblyusablefor
ultravioletLEDs.
Inefficientemission
at210nmwas
achievedonAlN.
direct
problematictobe
dopedtoptype,p
dopingwithMgand
annealingallowed
firsthighefficiency
blueLEDs[2]and
bluelasers.Very
sensitivetoESD.
Insensitiveto
ionizingradiation,
suitablefor
spacecraftsolar
panels.GaN
transistorscan
operateathigher
voltagesandhigher
temperaturesthan
GaAs,usedin
microwavepower
amplifiers.When
dopedwithe.g.
manganese,becomes
amagnetic
semiconductor.
indirect
Usedinearlylowto
mediumbrightness
cheap
red/orange/green
LEDs.Used
standaloneorwith
GaAsP.Transparent
foryellowandred
light,usedas
substrateforGaAsP
red/yellowLEDs.
DopedwithSorTe
forntype,withZn
forptype.PureGaP
emitsgreen,
nitrogendopedGaP
emitsyellowgreen,
ZnOdopedGaP
emitsred.
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IIIV
IIIV
IIIV
IIIV
IIIV
Gallium
arsenide
Gallium
antimonide
GaAs
GaSb
Indiumnitride InN
Indium
phosphide
Indium
arsenide
InP
InAs
1.43[3][4]
0.726[3][4]
0.7[3]
1.35[3]
0.36[3]
direct
secondmost
commoninuseafter
silicon,commonly
usedassubstratefor
otherIIIV
semiconductors,e.g.
InGaAsand
GaInNAs.Brittle.
Lowerholemobility
thanSi,Ptype
CMOStransistors
unfeasible.High
impuritydensity,
difficulttofabricate
smallstructures.
UsedfornearIR
LEDs,fast
electronics,and
highefficiencysolar
cells.Verysimilar
latticeconstantto
germanium,canbe
grownon
germanium
substrates.
direct
Usedforinfrared
detectorsandLEDs
and
thermophotovoltaics.
DopednwithTe,p
withZn.
direct
Possibleuseinsolar
cells,butptype
dopingdifficult.
Usedfrequentlyas
alloys.
direct
Commonlyusedas
substratefor
epitaxialInGaAs.
Superiorelectron
velocity,usedin
highpowerand
highfrequency
applications.Usedin
optoelectronics.
direct
Usedforinfrared
detectorsfor1
3.8m,cooledor
uncooled.High
electronmobility.
InAsdotsinInGaAs
matrixcanserveas
quantumdots.
Quantumdotsmay
beformedfroma
monolayerofInAs
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onInPorGaAs.
Strongphoto
Demberemitter,
usedasaterahertz
radiationsource.
IIIV
IIVI
IIVI
Indium
antimonide
Cadmium
selenide
Cadmium
sulfide
InSb
CdSe
CdS
0.17[3]
1.74[4]
2.42[4]
direct
Usedininfrared
detectorsand
thermalimaging
sensors,high
quantumefficiency,
lowstability,require
cooling,usedin
militarylongrange
thermalimager
systems.AlInSb
InSbAlInSb
structureusedas
quantumwell.Very
highelectron
mobility,electron
velocityandballistic
length.Transistors
canoperatebelow
0.5Vandabove
200GHz.Terahertz
frequenciesmaybe
achievable.
direct
Nanoparticlesused
asquantumdots.
Intrinsicntype,
difficulttodopep
type,butcanbep
typedopedwith
nitrogen.Possible
usein
optoelectronics.
Testedforhigh
efficiencysolar
cells.
direct
Usedin
photoresistorsand
solarcells
CdS/Cu2Swasthe
firstefficientsolar
cell.Usedinsolar
cellswithCdTe.
Commonas
quantumdots.
Crystalscanactas
solidstatelasers.
Electroluminescent.
Whendoped,canact
asaphosphor.
Usedinsolarcells
withCdS.Usedin
thinfilmsolarcells
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IIVI
IIVI,
oxide
IIVI
IIVI
Cadmium
telluride
Zincoxide
Zincselenide
Zincsulfide
CdTe
ZnO
ZnSe
ZnS
1.49[4]
3.37[4]
2.7[4]
direct
andothercadmium
telluride
photovoltaicsless
efficientthan
crystallinesilicon
butcheaper.High
electroopticeffect,
usedinelectrooptic
modulators.
Fluorescentat
790nm.
Nanoparticlesusable
asquantumdots.
direct
Photocatalytic.
Bandwidthtunable
from3to4eVby
alloyingwith
magnesiumoxide
andcadmiumoxide.
Intrinsicntype,p
typedopingis
difficult.Heavy
aluminium,indium,
orgalliumdoping
yieldstransparent
conductivecoatings
ZnO:Alisusedas
windowcoatings
transparentinvisible
andreflectivein
infraredregionand
asconductivefilms
inLCDdisplaysand
solarpanelsasa
replacementof
indiumtinoxide.
damage.Possible
useinLEDsand
laserdiodes.
Possibleusein
randomlasers.
direct
Usedforbluelasers
andLEDs.Easyto
ntypedoping,p
typedopingis
difficultbutcanbe
donewithe.g.
nitrogen.Common
opticalmaterialin
infraredoptics.
3.54/3.91[4] direct
Bandgap3.54eV
(cubic),3.91
(hexagonal).Canbe
dopedbothntype
andptype.Common
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scintillator/phosphor
whensuitably
doped.
IIVI
Zinctelluride
ZnTe
2.25[4]
direct
IVII
Cuprous
chloride
CuCl
3.4[10]
direct
IVI
IVVI
IVVI
IVVI
Coppersulfide Cu2S
Leadselenide PbSe
Lead(II)
sulfide
PbS
Leadtelluride PbTe
1.2
0.27
Canbegrownon
AlSb,GaSb,InAs,
andPbSe.Usedin
solarcells,
compomentsof
microwave
generators,blue
LEDsandlasers.
Usedin
electrooptics.
Togetherwith
lithiumniobateused
togenerateterahertz
radiation.
direct
ptype,Cu2S/CdS
wasthefirstefficient
thinfilmsolarcell
direct
Usedininfrared
detectorsforthermal
imaging.
Nanocrystalsusable
asquantumdots.
Goodhigh
temperature
thermoelectric
material.
0.37
Mineralgalena,first
semiconductorin
practicaluse,usedin
cat'swhisker
detectorsthe
detectorsareslow
duetohighdielectric
constantofPbS.
Oldestmaterialused
ininfrareddetectors.
Atroomtemperature
candetectSWIR,
longerwavelengths
requirecooling.
0.32
Lowthermal
conductivity,good
thermoelectric
materialatelevated
temperaturefor
thermoelectric
generators.
Tinsulde(SnS)isa
semiconductorwith
directopticalband
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gapof1.3eVand
absorption
coefcientabove104
cm1forphoton
energiesabove1.3
eV.Itisaptype
semiconductor
direct/indirect whoseelectrical
propertiescanbe
tailoredbydoping
andstructural
modicationandhas
emergedasoneof
thesimple,nontoxic
andaffordable
materialforthin
lmssolarcells
sinceadecade.
IVVI
Tinsulfide
SnS
1.3/1.0[11]
IVVI
Tinsulfide
SnS2
2.2
IVVI
Tintelluride
SnTe
Complexband
structure.
IVVI
Leadtin
telluride
PbSnTe
Usedininfrared
detectorsandfor
thermalimaging.
IVVI
Thalliumtin
telluride
Tl2SnTe5
Thallium
germanium
telluride
Tl2GeTe5
IVVI
VVI,
layered
Bismuth
telluride
Bi2Te3
IIV
Cadmium
phosphide
Cd3P2
Efficient
thermoelectric
materialnearroom
temperaturewhen
alloyedwith
seleniumor
antimony.Narrow
gaplayered
semiconductor.High
electrical
conductivity,low
thermal
conductivity.
Topological
insulator.
Ntypeintrinsic
semiconductor.Very
highelectron
mobility.Usedin
infrareddetectors,
photodetectors,
dynamicthinfilm
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IIV
Cadmium
arsenide
IIV
Cadmium
antimonide
Cd3Sb2
IIV
Zinc
phosphide
Zn3P2
IIV
Zincarsenide
Zn3As2
Cd3As2
IIV
Zinc
antimonide
Zn3Sb2
Oxide
Titanium
dioxide,
anatase
TiO2
Oxide
2
2
Oxide
pressuresensors,and
magnetoresistors.
Recent
measurements
suggestthat3D
Cd3As2isactuallya
zerobandgapDirac
semimetalinwhich
electronsbehave
relativisticallyasin
graphene.[12]
0.14
Usedininfrared
detectorsand
thermalimagers,
transistors,and
magnetoresistors.
3.2
indirect
photocatalytic,n
type
Titanium
TiO2
dioxide,rutile
3.02
direct
photocatalytic,n
type
Titanium
dioxide,
brookite
2.96
[13]
TiO2
Oxide
Copper(I)
oxide
Cu2O
2.17[14]
Oneofthemost
studied
semiconductors.
Manyapplications
andeffectsfirst
demonstratedwithit.
Formerlyusedin
rectifierdiodes,
beforesilicon.
Oxide
Copper(II)
oxide
CuO
1.2
Ptype
semiconductor.
1.3
HighSeebeck
coefficient,resistant
tohightemperatures,
promising
thermoelectricand
thermophotovoltaic
applications.
Formerlyusedin
URDOXresistors,
conductingathigh
temperature.
damage.
Oxide
Uranium
dioxide
UO2
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Uranium
trioxide
UO3
Oxide
Bismuth
trioxide
Bi2O3
Oxide
Tindioxide
SnO2
Oxide
Oxide
Oxide
Barium
titanate
Strontium
titanate
BaTiO3
SrTiO3
Ionicconductor,
applicationsinfuel
cells.
3.7
Oxygendeficientn
typesemiconductor.
Usedingassensors.
Ferroelectric,
piezoelectric.Used
insomeuncooled
thermalimagers.
Usedinnonlinear
optics.
3.3
Ferroelectric,
piezoelectric.Used
invaristors.
Conductivewhen
niobiumdoped.
Oxide
Lithium
niobate
LiNbO3
Ferroelectric,
piezoelectric,shows
Pockelseffect.Wide
usesinelectrooptics
andphotonics.
Oxide
Lanthanum
copperoxide
La2CuO4
superconductive
whendopedwith
bariumorstrontium
Layered
Lead(II)
iodide
PbI2
Layered
Molybdenum
disulfide
MoS2
Layered
Gallium
selenide
GaSe
Layered
Tinsulfide
SnS
Layered
Bismuth
sulfide
Bi2S3
Magnetic,
diluted
3
[15]
(DMS)
Gallium
manganese
arsenide
GaMnAs
Magnetic,
diluted
3
(DMS)
Indium
manganese
arsenide
InMnAs
Magnetic,
diluted
3
(DMS)
Cadmium
manganese
telluride
CdMnTe
Magnetic,
diluted
3
(DMS)
Lead
manganese
telluride
PbMnTe
Magnetic 4
Lanthanum
calcium
La0.7Ca0.3MnO3
2.1
indirect
Photoconductor.
Usesinnonlinear
optics.
colossal
magnetoresistance
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manganate
Magnetic 2
Iron(II)oxide FeO
Magnetic 2
Nickel(II)
oxide
NiO
Magnetic 2
Europium(II)
oxide
EuO
ferromagnetic
Magnetic 2
Europium(II)
sulfide
EuS
ferromagnetic
Magnetic 2
Chromium(III) CrBr
3
bromide
other
Copper
indium
selenide,CIS
other
Silvergallium AgGaS
2
sulfide
other
Zincsilicon
phosphide
ZnSiP2
other
Arsenic
sulfide
Orpiment
As2S3
semiconductivein
bothcrystallineand
glassystate
other
Arsenic
sulfide
Realgar
As4S4
semiconductivein
bothcrystallineand
glassystate
Usedininfrared
detectorsfor1
5m.Usedin
infraredastronomy.
Highstability,low
drift,usedfor
measurements.Low
quantumefficiency.
CuInSe2
other
Platinum
silicide
PtSi
other
Bismuth(III)
iodide
BiI3
other
Mercury(II)
iodide
antiferromagnetic
direct
nonlinearoptical
properties
Usedinsome
gammarayandx
raydetectorsand
imagingsystems
operatingatroom
temperature.Usedas
arealtimexray
imagesensor.
Thallium(I)
bromide
TlBr
other
Silversulfide
Ag2S
Irondisulfide
direct[16][17]
HgI2
3.64.0
eV
Usedinsome
gammarayandx
raydetectorsand
imagingsystems
operatingatroom
temperature.
other
other
antiferromagnetic
FeS2
0.9[18]
0.95
Mineralpyrite.Used
inlatercat'swhisker
detectors,
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investigatedforsolar
cells.
other
other
other
Copperzinc
tinsulfide,
CZTS
Cu2ZnSnS4
1.49
Copperzinc
Cu1.18Zn0.40Sb1.90S7.2 2.2[19]
antimony
sulfide,CZAS
Coppertin
sulfide,CTS
Cu2SnS3
0.91
direct
Cu2ZnSnS4is
derivedfromCIGS,
replacingthe
Indium/Galliumwith
earthabundant
Zinc/Tin.
direct
Copperzinc
antimonysulfideis
derivedfromcopper
antimonysulfide
(CAS),afamatinite
classofcompound.
direct
Cu2SnS3isptype
semiconductorandit
canbeusedinthin
filmsolarcell
application.
Tableofsemiconductoralloysystems
Thefollowingsemiconductingsystemscanbetunedtosomeextent,andrepresentnotasinglematerialbuta
classofmaterials.
Group
Elem.
Material
class
Formula
IV
Silicon
Si1xGex
germanium
IV
Silicontin
IIIV
Si1xSnx
Aluminium
AlxGa1xAs
gallium
arsenide
Band
gap
(eV)
lower
upper
Gaptype
Description
0.67
1.11[3]
indirect
adjustablebandgap,
allowsconstructionof
heterojunctionstructures.
Certainthicknessesof
superlatticeshavedirect
bandgap.[20]
1.0
1.11
indirect
Adjustablebandgap.[21]
1.42
2.16[3]
directbandgapforx<0.4
(correspondingto1.42
1.95eV)canbelattice
matchedtoGaAs
substrateoverentire
compositionrangetends
tooxidizendopingwith
Si,Se,Tepdopingwith
Zn,C,Be,Mg.[2]Canbe
direct/indirect usedforinfraredlaser
diodes.Usedasabarrier
layerinGaAsdevicesto
confineelectronstoGaAs
(seee.g.QWIP).AlGaAs
withcompositioncloseto
AlAsisalmost
transparenttosunlight.
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UsedinGaAs/AlGaAs
solarcells.
IIIV
IIIV
Indium
gallium
arsenide
Indium
gallium
phosphide
InxGa1xAs
InxGa1xP
IIIV
Aluminium
AlxIn1xAs
indium
arsenide
IIIV
Aluminium
AlxIn1xSb
indium
antimonide
Gallium
arsenide
nitride
IIIV
Gallium
arsenide
phosphide
IIIV
Gallium
arsenide
GaAsSb
antimonide
IIIV
0.36
Welldevelopedmaterial.
Canbelatticematchedto
InPsubstrates.Usein
infraredtechnologyand
Indiumcontent
determineschargecarrier
density.Forx=0.015,
InGaAsperfectlylattice
matchesgermaniumcan
beusedinmultijunction
photovoltaiccells.Used
ininfraredsensors,
avalanchephotodiodes,
laserdiodes,opticalfiber
communicationdetectors,
andshortwavelength
infraredcameras.
1.43
direct
2.26
usedforHEMTandHBT
structuresandhigh
efficiencymultijunction
solarcellsfore.g.
direct/indirect satellites.Ga0.5In0.5Pis
almostlatticematchedto
GaAs,withAlGaInused
forquantumwellsforred
lasers.
2.16
Bufferlayerin
metamorphicHEMT
transistors,adjusting
latticeconstantbetween
GaAssubstrateand
direct/indirect
GaInAschannel.Can
formlayered
heterostructuresactingas
quantumwells,ine.g.
quantumcascadelasers.
1.43
2.26
Usedinred,orangeand
yellowLEDs.Often
direct/indirect
grownonGaP.Canbe
dopedwithnitrogen.
0.7
1.42[3]
direct
1.35
0.36
GaAsN
GaAsP
Usedinbluelaserdiodes,
ultravioletLEDs(down
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IIIV
Aluminium
AlGaN
gallium
nitride
3.44
6.28
direct
IIIV
Aluminium
gallium
AlGaP
phosphide
2.26
2.45
indirect
Usedinsomegreen
LEDs.
direct
InxGa1xN,xusually
between0.020.3(0.02
fornearUV,0.1for
390nm,0.2for420nm,
0.3for440nm).Canbe
grownepitaxiallyon
sapphire,SiCwafersor
silicon.Usedinmodern
blueandgreenLEDs,
InGaNquantumwellsare
effectiveemittersfrom
greentoultraviolet.
Insensitivetoradiation
damage,possibleusein
satellitesolarcells.
Insensitivetodefects,
toleranttolattice
mismatchdamage.High
heatcapacity.
IIIV
IIIV
IIIV
IIIV
IIIV
Indium
gallium
nitride
Indium
arsenide
InAsSb
antimonide
Indium
gallium
InGaSb
antimonide
InGaN
Aluminium
gallium
AlGaInP
indium
phosphide
3.4
to250nm),and
AlGaN/GaNHEMTs.
Canbegrownon
sapphire.Usedin
heterojunctionswithAlN
andGaN.
alsoInAlGaP,InGaAlP,
AlInGaPforlattice
matchingtoGaAs
substratestheInmole
fractionisfixedatabout
0.48,theAl/Garatiois
adjustedtoachieveband
gapsbetweenabout1.9
direct/indirect and2.35eVdirector
indirectbandgaps
dependingonthe
Al/Ga/Inratiosusedfor
waveengthsbetween
560650nmtendsto
formorderedphases
duringdeposition,which
hastobeprevented[2]
Aluminium
gallium
AlGaAsP
arsenide
15/19
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phosphide
IIIV
IIIV
IIIV
IIIV
IIIV
IIIV
IIIV
IIIV
IIIV
IIIV
IIVI
Indium
gallium
arsenide
phosphide
Indium
gallium
InGaAsSb
arsenide
antimonide
Usein
Indium
arsenide
InAsSbP
antimonide
phosphide
Usein
Aluminium
indium
AlInAsP
arsenide
phosphide
Aluminium
gallium
AlGaAsN
arsenide
nitride
Indium
gallium
arsenide
nitride
Indium
aluminium
InAlAsN
arsenide
nitride
Gallium
arsenide
GaAsSbN
antimonide
nitride
Gallium
indium
nitride
GaInNAsSb
arsenide
antimonide
Gallium
indium
arsenide
GaInAsSbP
antimonide
phosphide
Cadmium
zinc
telluride,
CZT
InGaAsP
InGaAsN
CdZnTe
CanbegrownonInAs,
GaSb,andother
substrates.Canbelattice
matchedbyvarying
composition.Possibly
usableformidinfrared
LEDs.
1.4
2.2
direct
Efficientsolidstatexray
andgammaraydetector,
canoperateatroom
temperature.High
electroopticcoefficient.
Usedinsolarcells.Can
beusedtogenerateand
detectterahertzradiation.
16/19
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Canbeusedasasubstrate
forepitaxialgrowthof
HgCdTe.
IIVI
IIVI
IIVI
other
Mercury
cadmium
telluride
HgCdTe
Mercury
zinc
telluride
HgZnTe
Mercury
zinc
selenide
HgZnSe
Copper
indium
gallium
selenide,
CIGS
Cu(In,Ga)Se2 1
1.5
Knownas"MerCad".
Extensiveuseinsensitive
cooledinfraredimaging
sensors,infrared
astronomy,andinfrared
detectors.Alloyof
mercurytelluride(a
semimetal,zeroband
gap)andCdTe.High
electronmobility.The
onlycommonmaterial
capableofoperatingin
both35mand12
15matmospheric
windows.Canbegrown
onCdZnTe.
2.25
Usedininfrared
detectors,infrared
imagingsensors,and
infraredastronomy.
Bettermechanicaland
thermalpropertiesthan
HgCdTebutmore
difficulttocontrolthe
composition.More
difficulttoformcomplex
heterostructures.
1.7
direct
CuInxGa1xSe2.
Polycrystalline.Usedin
thinfilmsolarcells.
Seealso
Heterojunction
Organicsemiconductors
Semiconductorcharacterizationtechniques
References
1. MiltonOhringReliabilityandfailureofelectronicmaterialsanddevices(http://books.google.com/books?
id=gxSyMjosCwcC&pg=PA310&dq=semiconductor+failure+microphotograph&lr=&as_drrb_is=q&as_minm_is=0&a
s_miny_is=&as_maxm_is=0&as_maxy_is=&num=50&as_brr=3&cd=32#v=onepage&q=&f=false)AcademicPress,
1998ISBN0125249853,p.310
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2. JohnDakin,RobertG.W.BrownHandbookofoptoelectronics,Volume1(http://books.google.com/books?
id=3GmcgL7Z
6YC&pg=PA57&lpg=PA57&dq=gas+discharge+properties+mercury+neon+hydrogen+deuterium&source=bl&ots=ivx
Vbrcyip&sig=8ozlMgy
CAtNgmXRd9eTFIDioSc&hl=en&ei=WKXNS66xFYqy0gSfs4nqDw&sa=X&oi=book_result&ct=result&resnum=34
&ved=0CH4Q6AEwIQ#v=onepage&q&f=false),CRCPress,2006ISBN0750306467p.57
3. Ioffedatabase(http://www.ioffe.ru/SVA/NSM/Semicond/)
4. SafaO.Kasap,PeterCapper(2006).Springerhandbookofelectronicandphotonicmaterials
(http://books.google.com/?id=rVVW22pnzhoC&pg=PA54).Springer.pp.54,327.ISBN0387260595.
5. Y.Tao,J.M.Boss,B.A.Moores,C.L.Degen(2012).SingleCrystalDiamondNanomechanicalResonatorswith
QualityFactorsexceedingoneMillion(http://arxiv.org/abs/1212.1347).arXiv:1212.1347
6. Kittel,Charles.IntroductiontoSolidStatePhysics,7thEdition.Wiley.
7. http://www.matweb.com/search/datasheet.aspx?matguid=64d7cf04332e428dbca9f755f4624a6c
8. Abass,A.K.Ahmad,N.H.(1986)."Indirectbandgapinvestigationoforthorhombicsinglecrystalsofsulfur".
JournalofPhysicsandChemistryofSolids47(2):143.doi:10.1016/00223697(86)90123X
(https://dx.doi.org/10.1016%2F00223697%2886%2990123X).
9. Evans,DAMcGlynn,AGTowlson,BMGunn,MJones,DJenkins,TEWinter,RPoolton,NRJ(2008).
"Determinationoftheopticalbandgapenergyofcubicandhexagonalboronnitrideusingluminescenceexcitation
spectroscopy".JournalofPhysics:CondensedMatter20(7):075233.Bibcode:2008JPCM...20g5233E
(http://adsabs.harvard.edu/abs/2008JPCM...20g5233E).doi:10.1088/09538984/20/7/075233
(https://dx.doi.org/10.1088%2F09538984%2F20%2F7%2F075233).
10. ClausF.Klingshirn(1997).Semiconductoroptics(http://books.google.com/?id=QRQU7S2CKCYC&pg=PA127).
Springer.p.127.ISBN354061687X.
11. Patel,MalkeshkumarIndrajitMukhopadhyayAbhijitRay(26May2013)."Annealinginuenceoverstructuraland
opticalpropertiesofsprayedSnSthinfilms".OpticalMaterials35:16931699.Bibcode:2013OptMa..35.1693P
(http://adsabs.harvard.edu/abs/2013OptMa..35.1693P).doi:10.1016/j.optmat.2013.04.034
(https://dx.doi.org/10.1016%2Fj.optmat.2013.04.034).
12. Borisenko,Sergeyetal."ExperimentalRealizationofaThreeDimensionalDiracSemimetal".PhysicalReview
Letters(PRL)113(027603).arXiv:1309.7978(https://arxiv.org/abs/1309.7978).Bibcode:2014PhRvL.113b7603B
(http://adsabs.harvard.edu/abs/2014PhRvL.113b7603B).doi:10.1103/PhysRevLett.113.027603
(https://dx.doi.org/10.1103%2FPhysRevLett.113.027603).
13. S.Banerjeeetal.(2006)."Physicsandchemistryofphotocatalytictitaniumdioxide:Visualizationofbactericidal
activityusingatomicforcemicroscopy"(http://www.ias.ac.in/currsci/may252006/1378.pdf)(PDF).CurrentScience90
(10):1378.
14. O.Madelung,U.Rssler,M.Schulz(ed.)."Cuprousoxide(Cu2O)bandstructure,bandenergies".LandoltBrnstein
GroupIIICondensedMatter.NumericalDataandFunctionalRelationshipsinScienceandTechnology.41C:Non
TetrahedrallyBondedElementsandBinaryCompoundsI.doi:10.1007/10681727_62
(https://dx.doi.org/10.1007%2F10681727_62).
15. B.G.YacobiSemiconductormaterials:anintroductiontobasicprinciples(http://books.google.com/books?
id=6FAbQCiaNPEC&pg=PA153&dq=%22MAGNETIC+SEMICONDUCTORS%22&lr=&as_drrb_is=q&as_minm_i
s=0&as_miny_is=&as_maxm_is=0&as_maxy_is=&num=50&as_brr=3&cd=3#v=onepage&q=%22MAGNETIC%20S
EMICONDUCTORS%22&f=false)Springer,2003,ISBN0306473615
16. SynthesisandCharacterizationofNanoDimensionalNickelousOxide(NiO)SemiconductorS.ChakrabartyandK.
Chatterjee
17. SynthesisandRoomTemperatureMagneticBehaviorofNickelOxideNanocrystallitesKwanruthaiWongsaprom*[a]
andSantiMaensiri[b]
18. HODESEbooksCorporation(8October2002).ChemicalSolutionDepositionofSemiconductorFilms
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19. PrashantKSarswatMichaelLFree.EnhancedPhotoelectrochemicalResponsefromCopperAntimonyZincSulfide
ThinFilmsonTransparentConductingElectrode,InternationalJournalofPhotoenergy,vol.2013,ArticleID
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20. Rajakarunanayake,YasanthaNirmal(1991)OpticalpropertiesofSiGesuperlatticesandwidebandgapIIVI
superlattices(http://thesis.library.caltech.edu/2857/)Dissertation(Ph.D.),CaliforniaInstituteofTechnology
21. Hussain,AftabM.Fahad,HossainM.Singh,NirpendraSevilla,GaloA.TorresSchwingenschlgl,UdoHussain,
MuhammadM."Tinanunlikelyallyforsiliconfieldeffecttransistors?".physicastatussolidi(RRL)Rapid
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