AON6414A

30V N-Channel MOSFET

General Description

Product Summary

The AON6414A uses advanced trench technology to

provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.

ID (at VGS=10V)

VDS

30V
30A

RDS(ON) (at VGS=10V)

< 8m

RDS(ON) (at VGS=4.5V)

< 10.5m

100% UIS Tested

100% Rg Tested

DFN5X6
Top View

Top View
Bottom View
1

G
S

PIN1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TC=25C G
ID

30

Pulsed Drain Current C

Avalanche Current

20
50

TC=100C
IDM
TA=25C

Continuous Drain
Current

Units
V

30

TC=25C I

Continuous Drain
Current

Maximum
30

140
13

IDSM

TA=70C
C

10

IAS, IAR

35

Avalanche energy L=0.05mH C

EAS, EAR

31

mJ

VDS Spike

VSPIKE

36

Power Dissipation B

100ns
TC=25C

PD

TC=100C
TA=25C

Power Dissipation A

Junction and Storage Temperature Range

Rev.4.0 March 2013

2.3

Steady-State
Steady-State

RJA
RJC

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1.5

TJ, TSTG

Symbol
t 10s

12.5

PDSM

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case

31

-55 to 150

Typ
17
44
3.4

Max
21
53
4

Units
C/W
C/W
C/W

Page 1 of 6

Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=250A, VGS=0V

IGSS
VGS(th)

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

1.5

ID(ON)

On state drain current

VGS=10V, VDS=5V

140

RDS(ON)

Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

TJ=55C

5
100

VGS=10V, ID=20A

Reverse Transfer Capacitance

Rg

Gate resistance

2.5
8
11.4

VGS=4.5V, ID=20A

8.2

10.5

VDS=5V, ID=20A

55

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

A
nA
V
A

6.6

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss

1.95

9.5

TJ=125C

Units
V

Zero Gate Voltage Drain Current

Output Capacitance

Max

30

VDS=30V, VGS=0V

IDSS

Coss

Typ

0.72

m
m
S

35

920

1150

1380

pF

125

180

235

pF

60

105

150

pF

0.55

1.1

1.65

nC

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

16

20

24

Qg(4.5V) Total Gate Charge

7.6

9.5

11.4

nC

2.7

3.2

nC

nC

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

VGS=10V, VDS=15V, ID=20A

3
VGS=10V, VDS=15V, RL=0.75,
RGEN=3

6.5

ns

ns

17

ns

3.5

ns

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

IF=20A, dI/dt=500A/s

8.7

10.5

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s

11

13.5

16

Body Diode Reverse Recovery Time

ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
I. The maximum current rating is limited by silicon

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.4.0 March 2013

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Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

140

10V

100

6V

VDS=5V

120

5V

7V

80

100
60
ID(A)

ID (A)

4.5V
80
4V

60

40

40

3.5V

20

125C

20
VGS=3V

0
0

0
5

0.5

1.5

2.5

3.5

4.5

5.5

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

12
Normalized On-Resistance

1.8

10
VGS=4.5V
RDS(ON) (m
)

25C

8
6
VGS=10V

4
2

VGS=10V
ID=20A

1.6
1.4

17
5

VGS=4.5V
ID=20A 2

1.2

10
1
0.8

10

15

20

25

30

ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

25

50

75

100

125

150

175

Temperature (C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)

25

1.0E+02
ID=20A

1.0E+01

20

40

125C

15

IS (A)

RDS(ON) (m
)

1.0E+00

125C
10

25C

1.0E-01
1.0E-02
1.0E-03

5
1.0E-04

25C
0

1.0E-05
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev.4.0 March 2013

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1600

10
VDS=15V
ID=20A

1400
Ciss

1200
Capacitance (pF)

VGS (Volts)

1000
800
600
400

Coss
200

10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics

20

RDS(ON)
limited

10.0

100s
1ms
DC

1.0
0.1

10ms

TJ(Max)=150C
TC=25C

0.0
0.01

17
5
2
10

120
80
40

0.1

10

100

0
0.0001

0.01

0.1

10

Pulse Width (s)

18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)
10

0.001

VDS (Volts)

Z JC Normalized Transient
Thermal Resistance

30

TJ(Max)=150C
TC=25C

160

10s
Power (W)

10s

100.0

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC
1

5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

200

1000.0

ID (Amps)

Crss

40

RJC=4C/W

0.1
PD

Single Pulse
0.01

Ton
0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.4.0 March 2013

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Page 4 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

35
TA=25C
60

30

50

Power Dissipation (W)

IAR (A) Peak Avalanche Current

70

TA=150C
TA=100C

40
30
20
TA=125C

10

25
20
15
10
5
0

0
0.000001

0.00001

0.0001

0.001

25

50

75

100

125

150

TCASE (
C)
Figure 13: Power De-rating (Note F)

Time in avalanche, tA (s)

Figure 12: Single Pulse Avalanche capability (Note
C)

40

10000

30

1000
Power (W)

Current rating ID(A)

TA=25C

20

10

10

1
0.00001

0
0

25

50

75

100

125

150

TCASE (
C)
Figure 14: Current De-rating (Note F)

10
Z JA Normalized Transient
Thermal Resistance

17
5
2
10

100

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1

0.001

0.1

10

1000

Pulse Width (s)

18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJA=53C/W

0.1

PD

0.01
Single Pulse
0.001
0.00001

0.0001

0.001

0.01

Ton
0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.4.0 March 2013

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Page 5 of 6

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+ Vds

VDC

Qgs

Qgd

VDC

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds
90%

+ Vdd

DUT

Vgs

VDC

Rg

10%

Vgs

Vgs

td(on)

tr

td(off)

t on

tf
toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

EAR= 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT
Vgs

Vds Isd
Vgs
Ig

Rev.4.0 March 2013

Isd

+ Vdd

t rr

dI/dt
I RM
Vdd

VDC

IF

Vds

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Page 6 of 6