SPD 09N05

SIPMOS Power Transistor

Features Product Summary
• N channel Drain source voltage VDS 55 V
• Enhancement mode Drain-Source on-state resistance RDS(on) 0.1 Ω
• Avalanche rated Continuous drain current ID 9.2 A

• dv/dt rated
• 175˚C operating temperature

Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3

SPD09N05 P-TO252 Q67040-S4136 Tape and Reel G D S
SPU09N05 P-TO251 Q67040-S4130-A2 Tube

MaximumRatings , at Tj = 25 ˚C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 ˚C 9.2
TC = 100 ˚C 6.5
Pulsed drain current IDpulse 37
TC = 25 ˚C
Avalanche energy, single pulse EAS 35 mJ
ID = 9.2 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax EAR 2.4
Reverse diode dv/dt dv/dt 6 kV/µs
IS = 9.2 A, VDS = 40 V, di/dt = 200 A/µs
Gate source voltage VGS ±20 V
Power dissipation Ptot 24 W
TC = 25 ˚C
Operating and storage temperature Tj , Tstg -55... +175 ˚C
IEC climatic category; DIN IEC 68-1 55/175/56

Data Sheet 1 06.99

 SPD 09N05

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 6.25 K/W
Thermal resistance, junction - ambient, leded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm 2 cooling area1) - - 50

Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 2.1 3 4
ID = 10 µA
Zero gate voltage drain current IDSS µA
VDS = 50 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1
VDS = 50 V, VGS = 0 V, Tj = 150 ˚C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance RDS(on) Ω
VGS = 10 V, ID = 6.5 A - 0.093 0.1

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.

Data Sheet 2 06.99

 SPD 09N05

Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g fs 3 4.5 - S
VDS≥2*ID*RDS(on)max , ID = 6.5 A
Input capacitance Ciss - 215 270 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance Coss - 75 95
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance Crss - 45 60
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time td(on) - 15 25 ns
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50 Ω
Rise time tr - 20 30
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50 Ω
Turn-off delay time td(off) - 30 45
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50 Ω
Fall time tf - 25 40
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50 Ω

Data Sheet 3 06.99

 SPD 09N05

Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge Qgs - 1.3 2 nC
VDD = 40 V, ID = 9.2 A
Gate to drain charge Qgd - 3.5 5.25
VDD = 40 V, ID = 9.2 A
Gate charge total Qg - 7 11
VDD = 40 V, ID = 9.2 A, VGS = 0 to 10 V
Gate plateau voltage V(plateau) - 5.9 - V
VDD = 40 V, ID = 9.2 A

Reverse Diode
Inverse diode continuous forward current IS - - 9.2 A
TC = 25 ˚C
Inverse diode direct current,pulsed I SM - - 37
TC = 25 ˚C
Inverse diode forward voltage VSD - 1.05 1.8 V
VGS = 0 V, I F = 18.5 A
Reverse recovery time t rr - 50 75 ns
VR = 30 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge Q rr - 0.085 0.13 µC
VR = 30 V, IF=l S , diF/dt = 100 A/µs

Data Sheet 4 06.99

 SPD 09N05

Power Dissipation Drain current

Ptot = f (TC) ID = f (TC )
parameter: VGS ≥ 10 V
SPD09N05 SPD09N05
26 11
W
A

22
9
20
8
18
Ptot

16 7

ID
14 6

12 5
10
4
8
3
6
2
4

2 1

0 0
0 20 40 60 80 100 120 140 160 ˚C 190 0 20 40 60 80 100 120 140 160 ˚C 190

TC TC

Safe operating area Transient thermal impedance

I D = f (V DS) ZthJC = f (tp )
parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T
SPD09N05 SPD09N05
10 2 10 1

tp = 2.5µs K/W
A

10 0
D

10 µs
/I

10 1
Z thJC
DS
V
=
ID

n)
(o
DS

100 µs
10 -1
R

D = 0.50
0.20
0 0.10
10 1 ms

0.05
10 ms 10 -2 single pulse
0.02
DC
0.01

10 -1 -1 0 1 2
10 -3 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10

VDS tp

Data Sheet 5 06.99

 SPD 09N05

Typ. output characteristics

Typ. drain-source-on-resistance
I D = f (VDS)
RDS(on) = f (ID)
parameter: tp = 80 µs
SPD09N05
parameter: V GS
24 Ptot = 24W SPD09N05
0.32
A c d e f g h i

VGS [V]
Ω
20
l k j a 4.0
18 b 4.5
i c 5.0
0.24

RDS(on)
16 d 5.5
h e
ID

6.0
14 0.20
f 6.5
g
12 g 7.0
h 7.5 0.16
10 f i 8.0
j 9.0 j
8 0.12
e k 10.0 k

6 l 20.0
d l
0.08
4
c
2 0.04 VGS [V] =
b c d e f g h i j k l
a 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0
0.0 1.0 2.0 3.0 4.0 V 5.5 0.00
0 2 4 6 8 10 12 14 16 A 19
VDS
ID
Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance
parameter: tp = 80 µs gfs = f(ID ); Tj = 25˚C
VDS ≥ 2 x I D x RDS(on) max parameter: gfs
30 6

A S

20 4
gfs
ID

15 3

10 2

5 1

0 0
0 1 2 3 4 5 6 7 8 V 10 0 2 4 6 8 10 12 14 16 A 20
VGS ID

Data Sheet 6 06.99

 SPD 09N05

Gate threshold voltage

Drain-source on-resistance
VGS(th) = f (Tj)
RDS(on) = f (Tj)
parameter : VGS = V DS, ID = 10 µA
parameter : ID = 6.5 A, VGS = 10 V
SPD09N05
0.34 5.0
V
Ω
4.4

0.28 4.0

VGS(th)
3.6
RDS(on)

0.24
3.2

0.20 2.8

2.4 max
0.16
98% 2.0
typ
0.12 1.6
typ
1.2
0.08
0.8
min
0.04 0.4

0.0
0.00 -60 -20 20 60 100 140 V 200
-60 -20 20 60 100 140 ˚C 200
Tj
Tj
Typ. capacitances Forward characteristics of reverse diode
C = f (VDS) IF = f (VSD )
parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs
SPD09N05
10 3 10 2

pF

Ciss 10 1
IF
C

10 2

Coss

10 0
Crss Tj = 25 ˚C typ
Tj = 175 ˚C typ
Tj = 25 ˚C (98%)
Tj = 175 ˚C (98%)

10 1 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Data Sheet 7 06.99

 SPD 09N05

Avalanche Energy EAS = f (Tj) Typ. gate charge

parameter: ID = 9.2 A, VDD = 25 V VGS = f (QGate )
RGS = 25 Ω parameter: ID puls = 9.2 A
SPD09N05
40 16

mJ V

30 12

VGS
EAS

25 10
0,2 VDS max 0,8 VDS max

20 8

15 6

10 4

5 2

0 0
20 40 60 80 100 120 140 ˚C 180 0 2 4 6 8 nC 11

Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = f (Tj)

SPD09N05
66
V

64
V(BR)DSS

62

60

58

56

54

52

50
-60 -20 20 60 100 140 ˚C 200

Tj

Data Sheet 8 06.99

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