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H11F1M, H11F2M, H11F3M

Photo FET Optocouplers


Features

General Description

As a remote variable resistor:


100 to 300M
15pF shunt capacitance
100G I/O isolation resistance

The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.

As an analog switch:
Extremely low offset voltage
60 Vpk-pk signal capability
No charge injection or latch-up
UL recognized (File #E90700)

Applications
As a remote variable resistor:
Isolated variable attenuator
Automatic gain control
Active filter fine tuning/band switching

As an analog switch:
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion

Schematic

Package Outlines

ANODE 1

CATHODE 2

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

OUTPUT
TERM.

OUTPUT
TERM.

www.fairchildsemi.com

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

May 2012

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Device

Value

Units

TOTAL DEVICE
TSTG

Storage Temperature

All

-40 to +150

TOPR

Operating Temperature

All

-40 to +100

TSOL

Lead Solder Temperature

All

260 for 10 sec

IF

Continuous Forward Current

All

60

mA

VR

Reverse Voltage

All

EMITTER

IF(pk)
PD

Forward Current Peak (10s pulse, 1% duty cycle)

All

LED Power Dissipation 25C Ambient

All

100

mW

1.33

mW/C

Derate Linearly from 25C


DETECTOR
PD

Detector Power Dissipation @ 25C

All

Derate linearly from 25C


BV4-6

I4-6

Breakdown Voltage (either polarity)

H11F1M,
H11F2M

Continuous Detector Current (either polarity)

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

300

mW

4.0

mW/C

30

H11F3M

15

All

100

mA

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H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Absolute Maximum Ratings (TA = 25C unless otherwise specified)

Individual Component Characteristics


Symbol

Parameter

Test Conditions

Device

Min.

Typ.*

Max.

Unit

1.3

1.75

10

EMITTER
VF

Input Forward Voltage

IF = 16mA

All

IR

Reverse Leakage Current

VR = 5V

All

CJ

Capacitance

V = 0 V, f = 1.0MHz

All

50

pF

OUTPUT DETECTOR
BV4-6
I4-6

Breakdown Voltage
Either Polarity
Off-State Dark Current

I4-6 = 10A, IF = 0

H11F1M, H11F2M

30

H11F3M

15

V4-6 = 15 V, IF = 0

All

50

nA

V4-6 = 15 V, IF = 0,
TA = 100C

All

50

R4-6

Off-State Resistance

V4-6 = 15 V, IF = 0

All

C4-6

Capacitance

V4-6 = 15 V, IF = 0,
f = 1MHz

All

300
15

pF

Transfer Characteristics
Symbol

Characteristics

Test Conditions

Device

Min

Typ*

Max

Units

H11F1M

200

H11F2M

330

H11F3M

470

H11F1M

200

H11F2M

330

H11F3M

470

DC CHARACTERISTICS
R4-6

R6-4

On-State Resistance

On-State Resistance

Resistance, non-linearity
and assymetry

IF = 16mA,
I4-6 = 100A

IF = 16mA,
I6-4 = 100A

IF = 16mA,
I4-6 = 25A RMS,
f = 1kHz

All

AC CHARACTERISTICS
ton

Turn-On Time

RL = 50, IF = 16mA,
V4-6 = 5V

All

45

toff

Turn-Off Time

RL = 50, IF = 16mA,
V4-6 = 5V

All

45

Isolation Characteristics
Symbol

Device

Min.

VISO

Isolation Voltage

Characteristic

f = 60Hz, t = 1 sec.

Test Conditions

All

7500

RISO

Isolation Resistance

VI-O = 500 VDC

All

1011

CISO

Isolation Capacitance

f = 1MHz

All

Typ.*

Max.

Units
VACPEAK

0.2

pF

*All Typical values at TA = 25C

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

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H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Electrical Characteristics (TA = 25C unless otherwise specified.)

As per IEC 60747-5-2, this optocoupler is suitable for safe electrical insulation only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Installation Classifications per DIN VDE 0110/1.89


Table 1
For Rated Main Voltage < 150Vrms

I-IV

For Rated Main voltage < 300Vrms

I-IV

Climatic Classification

55/100/21

Pollution Degree (DIN VDE 0110/1.89)

CTI

Comparative Tracking Index

175

VPR

Input to Output Test Voltage, Method b, VIORM x 1.875


= VPR, 100% Production Test with tm = 1 sec, Partial
Discharge < 5pC

1594

Vpeak

Input to Output Test Voltage, Method a, VIORM x 1.5 =


VPR, Type and Sample Test with tm = 60 sec, Partial
Discharge < 5pC

1275

Vpeak

VIORM

Max. Working Insulation Voltage

850

Vpeak

VIOTM

Highest Allowable Over Voltage

6000

Vpeak

External Creepage

mm

External Clearance

mm

Insulation Thickness

0.5

mm

Insulation Resistance at Ts, VIO = 500V

109

RIO

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

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H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Safety and Insulation Ratings

Figure 1. Resistance vs. Input Current

Figure 2. Output Characteristics

I46 OUTPUT CURRENT (A)

r(on) NORMALIZED RESISTANCE

800

10

IF = 14mA

400

IF = 10mA
IF = 6mA

200

IF = 6mA

-200

IF = 10mA
-400

IF = 14mA
IF = 18mA

-800

-0.2

100

-0.1

Figure 3. LED Forward Voltage vs. Forward Current

0.2

Figure 4. Off-state Current vs. Ambient Temperature

I46 NORMALIZED DARK CURRENT

1.8
VF FOR WARD VOLTAGE (V)

0.1

10000

2.0

1.6

TA = -40C
TA = 25C

1.2

1.0

0.0

V46 OUTPUT VOLTAGE (V)

IF INPUT CURRENT (mA)

1.4

IF = 2mA

IF = 2mA

-600

Normalized to:
IF = 16mA
I46 = 5A RMS

0.1

IF = 18mA

600

TA = 100C

0.8

NORMALIZED TO:
V46 = 15V
IF = 0mA
TA = 25C

1000

100

10

1
0.1

10

100

20

40

60

80

100

TA AMBIENT TEMPERATURE (C)

IF LED FOR WARD CURRENT (mA)

Figure 5. Resistive Non-Linearity vs. D.C. Bias

r(on) CHANGE IN RESISTANCE (%)

I4-6 = 10A RMS


r(on) = 200
1

0
1

50

100

150

200

250

300

350

V4-6 D.C. BIAS VOLTAGE (mV)

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

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H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Typical Performance Curves

As a Variable Resistor

As an Analog Signal Switch


ISOLATED SAMPLE AND HOLD CIRCUIT

ISOLATED VARIABLE ATTENUATORS


500K

+
VIN
VOUT

VIN

VIN

50

VOUT

VIN

H11F1M

H11F1M

IF

IF

IF

VOUT

H11F1M

VOUT

IF
LOW FREQUENCY

HIGH FREQUENCY
@1MHz DYNAMIC RANGE 50db
FOR 0 IF 30mA

@10KHz DYNAMIC RANGE 70db


FOR 0 IF 30mA

Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic
range and absence of coupling capacitors; D.C. level shifting or
parasitic feedback to the controlling function.
AUTOMATIC GAIN CONTROL

Accuracy and range are improved over conventional FET


switches because the H11FXM has no charge injection from
the control signal. The H11FXM also provides switching of
either polarity input signal up to 30V magnitude.
.

MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION


CALL V1
H11F1M
CALL
Vn
DATA
ACQUISITION

VOUT
V1
V2

H74A1
A/D
CONVERTER

Vn

H11F1M

MSB

MSB

DATA
INPUT

VIN

LSB H74A1

500K

PROCESS
CONTROL
LOGIC
SYSTEM

LSB
H11F1M

IF
AGC
SIGNAL

This simple circuit provides over 70db of stable gain control for
an AGC signal range of from 0 to 30mA. This basic circuit can
be used to provide programmable fade and attack for electronic
music.

The optical isolation, linearity and low offset voltage of the


H11FXM allows the remote multiplexing of low level analog signals
from such transducers as thermocouplers, Hall effect devices,
strain gauges, etc. to a single A/D converter.

ACTIVE FILTER FINE TUNING/BAND SWITCHING


IF1

TEST EQUIPMENT - KELVIN CONTACT POLARITY

IF2
H11F1M

H11F1M

H11F1M

IF

H11F1M
IF

A
A1

A2

ITEST
A3

DEVICE
UNDER
TEST

PARAMETER
SENSING
BOARD

H11F1M

C & D FOR
POLARITY 2

B
IF

IF TO
A & B FOR
POLARITY 1

IF

H11F1M

IF1 ADJUSTS f1, IF2 ADJUSTS f2

The linearity of resistance and the low offset voltage of the


H11FXM allows the remote tuning or band-switching of active
filters without switching glitches or distortion. This schematic
illustrates the concept, with current to the H11F1M IREDs
controlling the filters transfer characteristic.

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

In many test equipment designs the auto polarity function uses


reed relay contacts to switch the Kelvin Contact polarity. These
reeds are normally one of the highest maintenance cost items
due to sticking contacts and mechanical problems. The totally
solid-State H11FXM eliminates these troubles while providing
faster switching.

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H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Typical Applications

Through Hole

0.4" Lead Spacing

8.138.89
6

8.138.89
6

6.106.60
6.106.60

Pin 1

Pin 1
5.08 (Max.)

0.250.36

7.62 (Typ.)

3.283.53

5.08 (Max.)

0.250.36

3.283.53

0.38 (Min.)

2.543.81
0.38 (Min.)

2.543.81

0.200.30
2.54 (Bsc)

(0.86)

15 (Typ.)
2.54 (Bsc)

(0.86)

0.410.51
1.021.78

0.200.30

0.410.51
0.761.14

10.1610.80

1.021.78
0.761.14

Surface Mount
(1.78)

8.138.89
6

(1.52)
(2.54)
(7.49)

6.106.60
8.439.90

(10.54)

(0.76)

Pin 1

Rcommended Pad Layout

0.250.36

3.283.53
5.08
(Max.)
0.38 (Min.)

0.200.30

2.54 (Bsc)
(0.86)

0.160.88
(8.13)

0.410.51
1.021.78
0.761.14

Note:
All dimensions in mm.

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

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H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Package Dimensions

Option

Order Entry Identifier


(Example)

No option

H11F1M

H11F1SM

SR2

H11F1SR2M

H11F1VM

TV

H11F1TVM

IEC60747-5-2 approval, 0.4" Lead Spacing

SV

H11F1SVM

IEC60747-5-2 approval, Surface Mount

SR2V

H11F1SR2VM

Description
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
IEC60747-5-2 approval

IEC60747-5-2 approval, Surface Mount, Tape and Reel

Marking Information

V
3

H11F1

X YY Q

Definitions

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

Fairchild logo

Device number

VDE mark (Note: Only appears on parts ordered with VDE


option See order entry table)

One digit year code, e.g., 7

Two digit work week ranging from 01 to 53

Assembly package code

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H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Ordering Information

12.0 0.1
4.5 0.20
2.0 0.05
0.30 0.05

4.0 0.1

1.5 MIN
1.75 0.10

11.5 1.0
21.0 0.1

9.1 0.20

0.1 MAX

10.1 0.20

24.0 0.3

1.5 0.1/-0

User Direction of Feed

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

www.fairchildsemi.com
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H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Carrier Tape Specification

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

Reflow Profile

Temperature (C)

TP

260
240
TL
220
200
180
160
140
120
100
80
60
40
20
0

Max. Ramp-up Rate = 3C/S


Max. Ramp-down Rate = 6C/S

tP
Tsmax
tL

Preheat Area
Tsmin
ts

120

240

360

Time 25C to Peak

Time (seconds)

Profile Freature

Pb-Free Assembly Profile

Temperature Min. (Tsmin)

150C

Temperature Max. (Tsmax)

200C

Time (tS) from (Tsmin to Tsmax)

60120 seconds

Ramp-up Rate (tL to tP)

3C/second max.

Liquidous Temperature (TL)

217C

Time (tL) Maintained Above (TL)

60150 seconds

Peak Body Package Temperature

260C +0C / 5C

Time (tP) within 5C of 260C

30 seconds

Ramp-down Rate (TP to TL)

6C/second max.

Time 25C to Peak Temperature

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

8 minutes max.

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10

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

2007 Fairchild Semiconductor Corporation


H11F1M, H11F2M, H11F3M Rev. 1.0.5

www.fairchildsemi.com
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