W3N150

STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6 , 2.5 A, PowerMESH Power MOSFET
in TO-220, TO-247, TO-3PF
Features
Type
VDSS
RDS(on)
max.
STFW3N150
STP3N150
STW3N150
1500 V
1500 V
1500 V
<9
<9
<9
PTOT
ID
2.5 A 63 W
2.5 A 140 W
2.5 A 140 W
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF plastic package
Creepage distance path is 5.4 mm (typ.) for

TO-3PF
3
1
TO-220
TO-247
Figure 1.
TO-3PF
Internal schematic diagram
Application
$
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
companys proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
Table 1.
'
3
!-V
Device summary
Order codes
Marking
Package
Packaging
STFW3N150
3N150
TO-3PF
Tube
STP3N150
3N150
TO-220
Tube
STW3N150
3N150
TO-247
Tube
June 2010
Doc ID 13102 Rev 9
1/15
www.st.com
15
Free Datasheet http://www.Datasheet4U.com
Contents
STFW3N150, STP3N150, STW3N150
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
Test circuits
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
.............................................. 9
Doc ID 13102 Rev 9
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings

Value
Symbol
Parameter
Unit
TO-220,TO-247
TO-3PF
VDS
Drain-source voltage (VGS = 0)
1500
VGS
Gate-source voltage
30
ID
ID
(1)
Drain current (continuous) at TC = 25 C

Drain current (continuous) at TC = 100 C
2.5
2.5(1)
1.6
1.6
(1)
10
(1)
Drain current (pulsed)
10
PTOT
Total dissipation at TC = 25 C
140
VISO
Insulation withstand voltage (RMS) from

all three leads to external heat sink
(t=1 s;TC=25 C)
IDM
Derating factor
Tstg
Tj
63
3500
0.5
W/C
1.12
Storage temperature
Max. operating junction temperature
-50 to 150
150
1. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient

max
Tj
Table 4.
Symbol
TO-220
TO-247
TO-3PF
Unit
C/W
50
C/W
0.89
62.5
Maximum lead temperature for

soldering purpose
50
300
Avalanche characteristics
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)
2.5
EAS
Single pulse avalanche energy

(starting Tj = 25 C, ID = IAR, VDD = 50 V)
450
mJ
Doc ID 13102 Rev 9
3/15
Electrical characteristics
(Tcase = 25 C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
VDS = Max rating

Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250 A
RDS(on
Static drain-source on
resistance
Symbol
Typ.
Max.
Unit
1500
V
10
500
A
A
100
nA
Min.
Typ.
Max.
Unit
VGS = 30 V
VGS(th)
Table 6.
Min.
VGS = 10 V, ID = 1.3 A
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 30 V, ID = 1.3 A
2.6
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
939
102
13.2
pF
pF
pF
VDS=0 to 1200 V, VGS = 0
100
pF
Coss eq. (2) Equivalent output

capacitance
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0

Test signal level=20 mV
open drain
Qg
Qgs
Qgd
Total gate charge

Gate-source charge
Gate-drain charge
VDD = 1200 V, ID = 2.5 A,

VGS = 10 V
(see Figure 19)
29.3
4.6
17
nC
nC
nC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/15
Doc ID 13102 Rev 9
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Turn-on delay time

Rise time
Turn-off-delay time
Fall time
VDD = 750 V, ID = 1.25 A,

RG = 4.7 , VGS = 10 V
(see Figure 18)
Min.
Typ.
24
47
45
61
Max. Unit
ns
ns
ns
ns
Source drain diode

Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
Min. Typ. Max. Unit

-
2.5
10
A
A
1.6
Forward on voltage
ISD = 2.5 A, VGS = 0
Reverse recovery time

Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/s

VDD= 60 V
(see Figure 20)
410
2.4
11.7
ns
C
A
Reverse recovery time

Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/s

VDD= 60 V, Tj = 150 C
(see Figure 20)
540
3.3
12.3
ns
C
A
1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 s, duty cycle 1.5%
Doc ID 13102 Rev 9
5/15
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-3PF
Figure 3.
AM03934v1
ID
(A)
=0.5
0.2
0.1
is
0.01
0.1
(o
n
10s
DS
Op
Lim era
ite tion
d
by in th
m is
ax ar
R ea
0.1
TO3PF
10
Thermal impedance for TO-3PF
100s
10
0.05
0.02
1ms
10
100
0.01
10ms
Tj=150C
Tc=25C
Single pulse
Sinlge
pulse
1
-1
-2
1000
VDS(V)
10 -5
10
-4
10
-3
10
-2
10
-1
10
tp (s)
Figure 4.
Safe operating area for TO-220
Figure 5.
Thermal impedance for TO-220
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
6/15
Doc ID 13102 Rev 9

Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10. Normalized BVDSS vs. temperature Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs. gate-source

voltage
Figure 13. Capacitance variations
Doc ID 13102 Rev 9
7/15
Figure 14. Normalized gate threshold voltage

vs. temperature
Figure 15. Normalized on resistance vs.

temperature
Figure 16. Source-drain diode forward

characteristics
Figure 17. Maximum avalanche energy vs Tj
8/15
Doc ID 13102 Rev 9
Test circuits
Test circuits
Figure 18. Switching times test circuit for

resistive load
Figure 19. Gate charge test circuit

VDD
12V
47k
1k
100nF
3.3
F
2200
RL
VGS
IG=CONST
VDD
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load

Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
D.U.T.
FAST
DIODE
D
G
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
Figure 22. Unclamped inductive waveform
AM01471v1
Figure 23. Switching time waveform

ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
Doc ID 13102 Rev 9
10%
AM01473v1
9/15
Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/15
Doc ID 13102 Rev 9
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Doc ID 13102 Rev 9
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/15
TO-247 Mechanical data

mm.
Dim.
A
Min.
4.85
Typ
A1
2.20
2.60
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
0.40
0.80
19.85
20.15
15.45
15.75
5.45
14.20
14.80
L1
3.70
4.30
L2
18.50
3.55
3.65
4.50
5.50
12/15
Max.
5.15
5.50
Doc ID 13102 Rev 9
TO-3PF mechanical data

DIM.
A
C
D
D1
E
F
F2
G
G1
H
L
L2
L3
L4
L5
L6
L7
N
R
Dia
mm.
typ
min.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
max.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
5.45
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
10
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15
2.20
4.20
3.80
7627132_C
Doc ID 13102 Rev 9
13/15
Revision history
Revision history
Table 9.
14/15
Document revision history
Date
Revision
Changes
12-Jan-2007
First release
17-Apr-2007
Added new value on Table 6.
14-May-2007
The document has been reformatted
29-Aug-2007
RDS(on) value changed, updated Figure 15
09-Apr-2008
Added new package: TO-3PF
13-Feb-2009
Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings)
01-Dec-2009
Document status promoted from preliminary data to datasheet

Removed TO-220FH package and mechanical data
10-Dec-2009
Corrected VISO value in Table 2: Absolute maximum ratings
29-Jun-2010
Corrected unit in Table 3.
Doc ID 13102 Rev 9
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STFW3N150

100% avalanche tested

Intrinsic capacitances and Qg minimized

High speed switching

Fully isolated TO-3PF plastic package

Creepage distance path is 5.4 mm (typ.) for

Internal schematic diagram

Doc ID 13102 Rev 9

Free Datasheet http://www.Datasheet4U.com

STFW3N150, STP3N150, STW3N150

Electrical characteristics (curves)

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Doc ID 13102 Rev 9

Free Datasheet http://www.Datasheet4U.com

STFW3N150, STP3N150, STW3N150

Absolute maximum ratings

Drain-source voltage (VGS = 0)

Drain current (continuous) at TC = 25 C

Drain current (pulsed)

Insulation withstand voltage (RMS) from

1. Pulse width limited by safe operating area

Thermal resistance junction-case max

Thermal resistance junction-ambient

Maximum lead temperature for

Avalanche current, repetitive or not-repetitive

Single pulse avalanche energy

Doc ID 13102 Rev 9

Free Datasheet http://www.Datasheet4U.com

STFW3N150, STP3N150, STW3N150

VDS = Max rating

Gate threshold voltage VDS = VGS, ID = 250 A

VDS = 25 V, f = 1 MHz, VGS = 0

VDS=0 to 1200 V, VGS = 0

Coss eq. (2) Equivalent output

Gate input resistance

f=1 MHz Gate DC Bias=0

Total gate charge

VDD = 1200 V, ID = 2.5 A,

1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%

Doc ID 13102 Rev 9

Free Datasheet http://www.Datasheet4U.com

STFW3N150, STP3N150, STW3N150

Turn-on delay time

VDD = 750 V, ID = 1.25 A,

Source drain diode

Min. Typ. Max. Unit

ISD = 2.5 A, VGS = 0

Reverse recovery time

ISD = 2.5 A, di/dt = 100 A/s

Reverse recovery time

ISD = 2.5 A, di/dt = 100 A/s

1. Pulse width limited by safe operating area

Doc ID 13102 Rev 9

Free Datasheet http://www.Datasheet4U.com

STFW3N150, STP3N150, STW3N150

Electrical characteristics (curves)

Safe operating area for TO-3PF

Thermal impedance for TO-3PF

Safe operating area for TO-220

Thermal impedance for TO-220

Safe operating area for TO-247

Thermal impedance for TO-247

Doc ID 13102 Rev 9

Free Datasheet http://www.Datasheet4U.com