FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

QFET
FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
Features
Description
These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
12A, 600V, RDS(on) = 0.65 @VGS = 10 V

Low gate charge ( typical 48 nC)
Low Crss ( typical 21pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
G
G DS
TO-220
FQP Series
TO-220F
GD S
FQPF Series
Absolute Maximum Ratings

Symbol
Parameter
FQP12N60C
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)

- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FQPF12N60C
600
(Note 1)
Unit
V
12
7.4
12*
7.4*
A
A
48
48*
30
Single Pulsed Avalanche Energy
(Note 2)
870
mJ
Avalanche Current
(Note 1)
12
EAR
Repetitive Avalanche Energy
(Note 1)
22.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
(TC = 25C)
- Derate above 25C
225
1.78
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds
51
0.41
W
W/C
-55 to +150
300
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP12N60C
FQPF12N60C
Unit
RJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
0.56
2.43
C/W
RJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
C/W
RJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C/W
2007 Fairchild Semiconductor Corporation
FQP12N60C / FQPF12N60C Rev. B1
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
September 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP12N60C
FQP12N60C
TO-220
50
FQPF12N60C
FQPF12N60C
TO-220F
50
Electrical Characteristics
Symbol
TC = 25C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A, TJ = 25C
600
--
--
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250A, Referenced to 25C
--
0.5
--
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V

VDS = 480V, TC = 125C
---
---
1
10
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
2.0
--
4.0
--
0.53
0.65
--
13
--
--
1760
2290
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 6A
gFS
Forward Transconductance
VDS = 40V, ID = 6A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,

f = 1.0MHz
--
182
235
pF
--
21
28
pF
--
30
70
ns
--
85
180
ns
--
140
280
ns
--
90
190
ns
--
48
63
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300V, ID = 12A

RG = 25
(Note 4, 5)
VDS = 400V, ID = 12A

VGS = 10V
(Note 4, 5)
--
8.5
--
nC
--
21
--
nC
12
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
48
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 12A
--
--
1.4
trr
Reverse Recovery Time
420
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 12A

dIF/dt =100A/s
--
Qrr
--
4.9
--
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Typical Performance Characteristics

Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
10
ID, Drain Current [A]
Top :
150 C
o
-55 C
25 C
0
10
Notes :
1. 250s Pulse Test
2. TC = 25
10
Notes :
1. VDS = 40V
2. 250s Pulse Test
-1
10
0
10
10
VDS, Drain-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperatue
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
VGS = 10V
1.0
VGS = 20V
0.5
VGS, Gate-Source Voltage [V]
10
10
150
Notes :
1. VGS = 0V
2. 250s Pulse Test
25
Note : TJ = 25
-1
10
15
20
25
30
10
35
0.2
0.4
0.6
Figure 5. Capacitance Characteristics

3500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Coss
1500
1000
1.4
VDS = 120V
Ciss
2000
1.2
12
10
2500
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
3000
0.8
VSD, Source-Drain voltage [V]
Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
500
VDS = 300V
VDS = 480V
2
Note : ID = 12A
0
-1
10
0
0
10
10
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 6.0 A
0.5
0.0
-100
200
100
10 s
1 ms
10 ms
100 ms
DC
0
10
Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
200
10 s
100 s
100 s
10
150
Operation in This Area

is Limited by R DS(on)
10
50
Figure 9-2. Maximum Safe Operating Area

for FQPF12N60C
Operation in This Area

is Limited by R DS(on)
Figure 9-1. Maximum Safe Operating Area

for FQP12N60C
10
-50
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
10
1 ms
10 ms
100 ms
DC
10
Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
-2
10
10
10
-2
10
10
10
10
10
10
10
Figure 10. Maximum Drain Current

vs. Case Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
Typical Performance Characteristics (Continued)
Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FQP12N60C
Z JC(t), Thermal Response
10
D = 0 .5
10
0 .2
-1
N o te s :
1 . Z J C (t) = 0 .5 6 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .1
0 .0 5
10
10
PDM
0 .0 2
0 .0 1
-2
t1
s in g le p u ls e
-5
10
-4
10
-3
10
-2
10
t2
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Z JC(t), Thermal Response
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
10
D = 0 .5
0 .2
N o te s :
1 . Z J C (t) = 2 .4 3 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .1
10
0 .0 5
-1
0 .0 2
PDM
0 .0 1
t1
10
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Peak Diode Recovery dv/dt Test Circuit & Waveforms
TO-220
4.50 0.20
2.80 0.10
(3.00)
+0.10
1.30 0.05
18.95MAX.
(3.70)
3.60 0.10
15.90 0.20
1.30 0.10
(8.70)
(1.46)
9.20 0.20
(1.70)
9.90 0.20
1.52 0.10
10.08 0.30
(1.00)
13.08 0.20
)
(45
1.27 0.10
0.80 0.10
2.54TYP
[2.54 0.20]
+0.10
0.50 0.05
2.40 0.20
2.54TYP
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
Mechanical Dimensions
(Continued)
3.30 0.10
TO-220F
10.16 0.20
2.54 0.20
3.18 0.10
(7.00)
(1.00x45)
15.87 0.20
15.80 0.20
6.68 0.20
(0.70)
0.80 0.10
)
0
(3
9.75 0.30
MAX1.47
#1
+0.10
0.50 0.05
2.54TYP
[2.54 0.20]
2.76 0.20
2.54TYP
[2.54 0.20]
9.40 0.20
4.70 0.20
0.35 0.10
Dimensions in Millimeters
Mechanical Dimensions
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Rev. I31
10
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FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

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QFET

These N-Channel enhancement mode power field effect

12A, 600V, RDS(on) = 0.65 @VGS = 10 V

Absolute Maximum Ratings

- Continuous (TC = 25C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

*Drain current limited by maximum junction temperature

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2007 Fairchild Semiconductor Corporation

FQP12N60C / FQPF12N60C Rev. B1

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250A, TJ = 25C

Breakdown Voltage Temperature

ID = 250A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 600V, VGS = 0V

Gate-Body Leakage Current, Forward

VGS = 30V, VDS = 0V

Gate-Body Leakage Current, Reverse

VGS = -30V, VDS = 0V

Gate Threshold Voltage

VDS = VGS, ID = 250A

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V,

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDD = 300V, ID = 12A

VDS = 400V, ID = 12A

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

VGS = 0V, IS = 12A

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, IS = 12A

FQP12N60C / FQPF12N60C Rev. B1

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET

Package Marking and Ordering Information

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

IDR, Reverse Drain Current [A]

Figure 3. On-Resistance Variation vs.

VGS, Gate-Source Voltage [V]

ID, Drain Current [A]

Figure 5. Capacitance Characteristics

VGS, Gate-Source Voltage [V]