Documente Academic
Documente Profesional
Documente Cultură
2014
MAK302
ELEKTRONK
Chapter 4
MAK302-Elektronik
BJT Structure
The BJT has three regions called the emitter, base, and collector.
Between the regions are junctions as indicated. The term bipolar
refers to the use of both holes and electrons as current carriers in
the transistor structure
The base is a thin lightly doped region compared to the heavily doped
emitter and moderately doped collector regions.
C (collector)
n
B
(base)
Base-Collector
junction
p
n
p
B
Base-Emitter
junction
E (emitter)
npn
n
p
pnp
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BJT Operation
In normal operation, the base-emitter is
forward-biased and the base-collector is
reverse-biased.
For the npn type shown, the collector is more
positive than the base, which is more positive than
the emitter.
For the pnp type, the voltages
are reversed to maintain the
forward-reverse bias.
BC reversebiased
BC reversebiased +
++
BE forward- +
biased
BE forwardbiased
npn
pnp
MAK302-Elektronik
BJT Currents
The direction of conventional current is in the direction of the arrow
on the emitter terminal. The emitter current is the sum of the
collector current and the small base current. That is, IE = IC + IB.
+
IC
IC
IC
IC
IB
IB
IB
p
n
IB
p
IE
IE
IE
IE
npn
pnp
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BJT Characteristics
The collector characteristic curves show the relationship
of the three transistor currents.
The curve shown is for a fixed
based current. The first region is
the saturation region.
IC
Breakdown
region
Active region
Saturation
region
A
0
VCE(max)
0.7 V
VCE
MAK302-Elektronik
BJT Characteristics
As VCE is increased, IC increases until B. Then it flattens in
region between points B and C, which is the active region.
Ideally, when VCE exceeds 0.7 V, the base-collector junction becomes
reverse-biased and the transistor goes into the active, or linear, region
of its operation.
Once the basecollector junction is
reverse-biased, IC levels off and
remains essentially constant for a
given value of IB as VCE continues
to increase.
For this portion of the characteristic
curve, the value of IC is determined
only by the relationship expressed
as
IC
Breakdown
region
B
Active region
Saturation
region
A
0
0.7 V
VCE(max)
VCE
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BJT Characteristics
After C, is the breakdown region.
When VCE reaches a
sufficiently high voltage, the
reverse-biased base-collector
junction goes into breakdown;
and the collector current
increases rapidly as indicated
by the part of the curve to the
right of point C.
Breakdown
region
B
Active region
Saturation
region
A
0
VCE(max)
0.7 V
VCE
MAK302-Elektronik
BJT Characteristics
By setting up other values of base current, a family of
collector curves is developed.
b DC is the ratio of collector
current to base current.
IC
b DC
IC
IB
I B6
I B5
I B4
I B3
I B2
I B1
Cutoff region
IB = 0
VCE
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BJT Characteristics
What is the bDC for the transistor shown?
I C (mA)
10.0
IB6 = 60 mA
IB5 = 50 mA
b DC
8.0
IB4 = 40 mA
6.0
I B3 = 30 mA
4.0
IB2 = 20 mA
2.0
IB1 = 10 mA
IB = 0
VCE
I C 5.0 mA
167
I B 30 m A
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Cutoff
In a BJT, cutoff is the condition in which there is no base
current, which results in only an extremely small leakage
current (ICEO) in the collector circuit. For practical work, this
current is assumed to be zero.
In cutoff, neither the base-emitter
junction, nor the base-collector
junction are forward-biased.
RC
RB
ICEO
VCE VCC
IB = 0
VCC
MAK302-Elektronik
Saturation
In a BJT, saturation is the condition in which there is
maximum collector current. The saturation current is
determined by the external circuit (VCC and RC in this case)
because the collector-emitter voltage is minimum ( 0.2 V)
In saturation, an
increase of base
current has no effect
on the collector
circuit and the
relation IC = bDCIB is
no longer valid.
RC
IC
RB
+
VCE = VCC IC RC
+
VBB
IB
VCC
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DC Load Line
The DC load line represents the circuit that is external to
the transistor. It is drawn by
connecting the saturation
and cutoff points.
I
C
Saturation
The transistor
characteristic curves are
shown superimposed on
the load line. The region
between the saturation
and cutoff points is called
the active region.
IC(sat)
Cutoff
IB = 0
0 VCE(sat)
V CE
VCC
MAK302-Elektronik
DC Load Line
RC
4.48 mA
RC
3.3 kW
+
DC = 200
V BB
3V
ISAT
3.3 kW
RB
220 kW
VCC
15 V
VCO VCC 15 V
3.0 V 0.7 V
10.45 m A
220 kW
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Power Derating
Data Sheets
Data sheets give manufacturers specifications for maximum operating
conditions, thermal, and electrical characteristics. For example, an
electrical characteristic is bDC, which is given as hFE. The 2N3904 shows
a range of bs on the data sheet from 100 to 300 for IC = 10 mA.
Characteristic
ON Characteristics
DC current gain
( IC = 0.1 mA dc, VCE = 1.0 V dc)
Symbol
2N3903
2N3904
hFE
Min
Max
20
40
2N3903
2N3904
35
70
2N3903
2N3904
50
100
150
300
2N3903
2N3904
30
60
2N3903
2N3904
15
30
Unit
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MAK302-Elektronik
End
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