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Documente Profesional
Documente Cultură
SILICONCONTROLLED
RECTIFIERS
Copyright 1997, Power Innovations Limited,
UK
TO-220 PACKAGE
(TOP VIEW)
30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 200 A
3
Pin 2 is in electrical contact with the mounting
base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VDRM
TIC106D
TIC106M
TIC106S
TIC106N
VRRM
Average on-state current (180 conduction angle) at (or below) 80C case
temperature (see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width 300 s)
Peak gate power dissipation (pulse width 300 s)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
UNIT
400
TIC106D
TIC106M
TIC106S
TIC106N
Continuous on-state current at (or below) 80C case temperature (see Note 2)
VALUE
600
700
800
400
IT(RMS)
600
700
800
5
IT(AV)
3.2
ITM
IGM
PGM
PG(AV)
30
0.2
1.3
0.3
-40 to +110
-40 to +125
230
A
A
W
W
C
C
C
TC
Tstg
TL
PRO DUCT
INF OR MAT IO N
VGT
IH
TEST CONDITIONS
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Holding current
TYP
MAX
UNIT
VD = rated VDRM
RGK = 1 k
TC = 110C
400
VR = rated VRRM
IG = 0
TC = 110C
mA
VAA = 6 V
VAA = 6 V
tp(g) 20 s
RL = 100
RL = 100
RGK = 1 k
tp(g) 20 s
TC = - 40C
200
VAA = 6 V
tp(g) 20 s
RL = 100
RGK = 1 k
VAA = 6 V
tp(g) 20 s
RL = 100
RGK = 1 k
TC = 110C
VAA = 6 V
Initiating IT = 10 mA
RGK = 1 k
TC = - 40C
VAA = 6 V
Initiating IT = 10 mA
RGK = 1 k
5
1.7
VTM
ITM = 5 A
(See Note 6)
dv/dt
VD = rated VD
RGK = 1 k
NOTE
MIN
60
1.2
0.4
0.6
0.2
8
mA
TC = 110C
10
V
V/s
6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
RJC
RJA
MIN
TYP
MAX
UNIT
3.5
62.5
C/W
C/W
MAX
UNIT
TEST CONDITIONS
Gate-controlled
turn-on time
Circuit-commutated
turn-off time
PRO DUCT
MIN
IT = 5 A
IG = 10 mA
See Figure 1
IT = 5 A
IRM = 8 A
IG = 10 mA
See Figure 2
INFORMATIO N
TYP
1.75
7.7
TIC106SERIES
SILICONCONTROLLED
RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
VG
10%
tgt
RG
G
VG
VA
IG
90%
PMC1AA
0.1 F
to 0.5 F
IA
R2
R1
VA
DUT
RG
G1
VG1
TH1
VK
(IRM Monitor)
IG
RG
IG
0.1
VG2
G2 tP Synchronisation
V G1
VG2
IT
IA
tP
0
IRM
VA
VT
tq
PMC1AB
PRO DUCT
INF OR MAT IO N
3
6
Continuous DC
5
= 180
2
0
180
Conduction
Angle
TYPICAL CHARACTERISTICS
TJ = 110C
10
1
0
30
40
50
60
70
80
90
100
TI20AB
100
110
10
100
Figure 3.
100
TC 80 C
No Prior Device Conduction Gate Control Guaranteed
10
10
100
Figure 5.
PRO DUCT
INFORMATIO N
TC - Case Temperature - C
Figure 4.
10
01 1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 6.
100
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC20AA
VAA = 6 V
RL = 100
tp(g) 20 s
100
CASE TEMPERATURE
TC20AB
06
04
02
-25
25
50
75
100
0
-50
125
-25
25
50
75
TC - Case Temperature - C
TC - Case Temperature - C
Figure 7.
Figure 8.
HOLDING CURRENT
vs
CASE TEMPERATURE
TC20AC
IA = 0
TC = 25 C
tp = 300 s
Duty Cycle 2 %
I - Holding Current - mA
10
100
125
TC20AD
10
VAA = 6 V
RGK = 1
k
Initiating IT = 10 mA
10
-50
01
01
10
100
1000
1
-50
-25
25
50
75
TC - Case Temperature - C
Figure 9.
Figure 10.
100
125
TYPICAL CHARACTERISTICS
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
TC20AE
10.0
2.0
2.5
TC = 25 C
tp = 300 s
Duty Cycle 2 %
1.5
1.0
0.5
0.0
01
VAA = 30 V
RL = 6
TC = 25 C
8.0
4.0
2.0
0.0
01
10
IG - Gate Current - mA
Figure 11.
Figure 12.
16
TC20AG
VAA = 30 V RL = 6 IRM 8 A
See14Test Circuit and Waveforms
12
10
8
6
4
2
0
20
40
60
80
TC - Case Temperature - C
Figure 13.
PRO DUCT
INFORMATIO N
100
120
10
TO-220
3-pin plastic flange-mount package
MECHANICAL DATA
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning
or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0tab.
NOTES: A. The centre pin is in electrical contact with the mounting
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package
version. Version
15,90
1, 18.0 mm. Version 2, 17.6 mm.
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
3
14,1
12,7
12
MDXXBE
2,34
5,28
4,88
0,41
2,90
2,40
VERSION 1
VERSION 2
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that
the information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO
BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
PRO DUCT
INFORMATIO N