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IRF520NPbF
VDSS = 100V
RDS(on) = 0.20
Description
ID = 9.7A
TO-220AB
Parameter
Max.
9.7
6.8
38
48
0.32
20
91
5.7
4.8
5.0
-55 to + 175
Units
A
W
W/C
V
mJ
A
mJ
V/ns
C
Thermal Resistance
Parameter
RJC
RCS
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.50
3.1
62
C/W
11/5/03
IRF520NPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min.
100
2.0
2.7
IDSS
LD
LS
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
V(BR)DSS/TJ
IGSS
Typ.
0.11
4.5
23
32
23
Max. Units
Conditions
V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.20
S
VDS = 50V, ID = 5.7A
25
VDS = 100V, VGS = 0V
A
250
VDS = 80V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
25
ID = 5.7A
4.8
nC
VDS = 80V
11
VGS = 10V, See Fig. 6 and 13
VDD = 50V
ID = 5.7A
ns
RG = 22
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
9.7
38
99
390
1.3
150
580
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25C, IS = 5.7A, VGS = 0V
TJ = 25C, IF = 5.7A
di/dt = 100A/s
Notes:
IRF520NPbF
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20s PULSE WIDTH
TC = 25C
1
0.1
10
10
4.5V
3.0
TJ = 25C
TJ = 175C
V DS= 50V
20s PULSE WIDTH
5
10
100
100
10
1
0.1
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
10
I D = 9.5A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
20
40
60
IRF520NPbF
600
Ciss
500
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
I D = 5.7A
16
400
12
Coss
300
200
Crss
100
0
1
10
100
0
0
10
15
20
25
100
100
VDS = 80V
VDS = 50V
VDS = 20V
TJ = 175C
10
TJ = 25C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
10
100s
1ms
1
10ms
TC = 25C
TJ = 175C
Single Pulse
0.1
1
10
100
1000
IRF520NPbF
RD
VDS
10.0
VGS
D.U.T.
RG
- VDD
8.0
10V
Pulse Width 1 s
Duty Factor 0.1 %
6.0
4.0
VDS
90%
2.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( C)
10%
VGS
175
td(on)
tr
t d(off)
tf
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
IRF520NPbF
D.U.T.
RG
V
- DD
IAS
10 V
tp
0.01
VDS
200
TOP
BOTTOM
160
120
80
40
VDD = 25V
25
VDS
ID
2.3A
4.0A
5.7A
50
75
100
125
150
175
IAS
50K
QG
12V
.2F
.3F
10 V
QGS
QGD
D.U.T.
VGS
VG
3mA
Charge
IG
ID
+
V
- DS
IRF520NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
+
-
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
IRF520NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
4- DRAIN
14.09 (.555)
13.47 (.530)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
INTERNATIO NAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/