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SGSD200
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
APPLICATIONS:
GENERAL PURPOSE SWITCHING
APPLICATION
GENERAL PURPOSE AMPLIFIERS
3
2
1
DESCRIPTION
The SGSD100 is silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in TO-218 plastic
package.
It is inteded for use in general purpose and high
current amplifier applications.
The complementary PNP type is the SGSD200.
TO-218
Parameter
Value
NPN
SGSD100
PNP
SGSD200
V CBO
Collector-Base Volta ge (I E = 0)
V CEO
Collector-Emitte r Voltage (I B = 0)
80
Collector Current
25
40
A
A
IC
I CM
80
Unit
Base Current
I BM
10
P tot
Total Dissipation at T c 25 o C
130
T st g
Storage Temperature
IB
Tj
-65 to 150
150
September 1997
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SGSD100/SGSD200
THERMAL DATA
R thj-ca se
Max
0.96
C/W
Parameter
Test Conditions
Typ.
Max.
Unit
ICBO
Collecto r Cut-of f
Current (I E = 0)
VCE = 80 V
VCE = 80 V
T c = 100 o C
0. 5
1. 5
mA
mA
ICEV
Collecto r Cut-of f
Current (VBE = -0.3V)
VCE = 80 V
VCE = 80 V
T c = 100 o C
0. 1
2
mA
mA
ICEO
Collecto r Cut-of f
Current (I B = 0)
VCE = 60 V
VCE = 60 V
T c = 100 o C
0. 5
1. 5
mA
mA
I EBO
mA
VBE( sat)
Collecto r-Emitter
Saturation Voltage
I C = 50 mA
IC
IC
IC
IC
IC
IC
=
=
=
=
=
=
5A
5A
10 A
10 A
20 A
20 A
80
IB
IB
IB
IB
IB
IB
= 20
= 20
= 40
= 40
= 80
= 80
V
V
V
V
V
V
Tc = 100 o C
Tc = 100 o C
2.6
2.5
3. 3
Tc = 100 o C
V
V
1.8
1.6
V
V
600
5000
8000
4000
8000
2000
2000
150 00
IB = 80 mA
IB = 80 mA
VBE
Base-Emitter Volta ge
I C = 10 A
I C = 10 A
VCE = 3 V
VCE = 3 V
hFE
DC Current Gain
IC
IC
IC
IC
IC
IC
=
=
=
=
=
=
5A
5A
10 A
10 A
20 A
20 A
VCE
VCE
VCE
VCE
VCE
VCE
=
=
=
=
=
=
5A
5A
10 A
10 A
20 A
20 A
3
3
3
3
3
3
V
V
V
V
V
V
T c = 100 o C
T c = 100 o C
T c = 100 o C
500
T c = 100 o C
T c = 100 o C
300
1.2
0.85
1.6
1.4
2.3
1.3
T c = 100 o C
T c = 100 o C
T c = 100 o C
Es/ b
Second Breakdown
Energy
VCC = 30 V L = 3 mH
VCC = 30 V L = 3 mH
I s/b
Second Breakdown
Current
VCE = 25 V t = 500 ms
1. 2
0.95
0.8
1.2
1.3
2
2.3
I C = 20 A
I C = 20 A
=
=
=
=
=
=
mA
mA
mA
mA
mA
mA
Base-Emitter
Saturation Voltage
VF
2/6
Min.
Tc = 100 o C
1.75
3. 5
120 00
6000
V
V
V
V
V
V
250
250
mJ
mJ
SGSD100/SGSD200
Safe Operating Areas
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SGSD100/SGSD200
Collector-Emitter Saturation Voltage (PNP type)
4/6
SGSD100/SGSD200
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.7
4.9
0.185
0.193
1.17
1.37
0.046
0.054
2.5
0.098
0.5
0.78
0.019
0.030
1.1
1.3
0.043
0.051
10.8
11.1
0.425
0.437
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
0.163
31
1.220
12.2
0.480
4.1
0.157
0.161
L6
L5
L3
L2
P025A
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SGSD100/SGSD200
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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