IRFP23N50L, SiHFP23N50L

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

Superfast Body Diode Eliminates the Need for

External Diodes in ZVS Applications

500

RDS(on) ()

VGS = 10 V

0.190

Qg (Max.) (nC)

150

Qgs (nC)

44

Qgd (nC)

72

Configuration

Lower Gate Charge Results in Simpler Drive

Requirements

Available

RoHS*
COMPLIANT

Enhanced dV/dt Capabilities Offer Improved Ruggedness

Higher Gate Voltage Threshold Offers Improved Noise
Immunity

Single
D

Lead (Pb)-free Available

TO-247

APPLICATIONS
Zero Voltage Switching SMPS
G

Telecom and Server Power Supplies

Uninterruptible Power Supplies

Motor Control Applications

N-Channel MOSFET

ORDERING INFORMATION
Package

TO-247
IRFP23N50LPbF

Lead (Pb)-free

SiHFP23N50L-E3
IRFP23N50L

SnPb

SiHFP23N50L

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

PARAMETER
Drain-Source Voltage

SYMBOL
VDS

LIMIT
500

Gate-Source Voltage

VGS

30

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID

UNIT
V

23
15

IDM

92
2.9

W/C

Single Pulse Avalanche Energyb

EAS

410

mJ

Repetitive Avalanche Currenta

IAR

23

Repetitive Avalanche Energya

EAR

37

mJ

PD

370

dV/dt

14

V/ns

TJ, Tstg

- 55 to + 150

Linear Derating Factor

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 C, L = 1.5 mH, RG = 25 , IAS = 23 A (see fig. 12).
c. ISD 23 A, dI/dt 430 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91209
S-81352-Rev. A, 16-Jun-08

IRFP23N50L, SiHFP23N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)

SYMBOL
RthJA
RthCS
RthJC

TYP.
0.24
-

MAX.
40
0.34

UNIT
C/W

SPECIFICATIONS TJ = 25 C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

V
V/C

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage

VDS

VGS = 0 V, ID = 250 A

500

VDS/TJ

Reference to 25 C, ID = 1 mAd

0.27

VGS(th)

VDS = VGS, ID = 250 A

3.0

5.0

Gate-Source Leakage

IGSS

VGS = 30 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

50

VDS = 400 V, VGS = 0 V, TJ = 125 C

2.0

mA

Drain-Source On-State Resistance

RDS(on)

Forward Transconductance

gfs

0.190

0.235

VDS = 50 V, ID = 14 Ab

12

ID = 14 Ab

VGS = 10 V

Dynamic
Input Capacitance

Ciss

VGS = 0 V,

3600

Output Capacitance

Coss

VDS = 25 V,

380

Crss

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Output Capacitance

Coss

Effective Output Capacitance

Coss eff.

Effective Output Capacitance

(Energy Related)

Coss eff. (ER)

Internal Gate Resistance

RG

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time
Turn-Off Delay Time
Fall Time

tr

VGS = 0 V

37

VDS = 1.0 V , f = 1.0 MHz

4800

VDS = 400 V , f = 1.0 MHz

100

VDS = 0 V to 400 Vc

220

VDS = 0 V to 400 Vd

160

1.2

f = 1 MHz, open drain

VGS = 10 V

ID = 23 A, VDS = 400 V
see fig. 6 and 13b

VDD = 250 V, ID = 23 A

150

44

26

72
-

94

td(off)

RG = 6.0, VGS = 10 V

53

tf

see fig. 10b

45

23

92

TJ = 25 C, IS = 14 A, VGS = 0 Vb

1.5

170

250

220

330

560

840

980

1500

7.6

11

pF

nC

ns

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time

trr
Qrr
IRRM
ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C
TJ = 125 C
TJ = 25 C

IF = 23 A,
dI/dt = 100 A/sb

TJ =1 25 C
TJ = 25 C

V
ns
C
A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 to 80 % VDS.
d. Coss eff. (ER) is a fixed capacitance that stores the same energy time as Coss while VDS is rising fom 0 to 80 % VDS.

Document Number: 91209

S-81352-Rev. A, 16-Jun-08

IRFP23N50L, SiHFP23N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100

1000.00

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

10

ID, Drain-to Source Current (A)

ID, Drain-to-Source Current (A)

TOP

0.1

4.5 V

0.01

TJ = 25 C
100.00

TJ = 150 C

10.00

20 s PULSE WIDTH

20s PULSE WIDTH

Tj = 25 C
0.001

TJ = 150C

1.00

0.1

10

100

1.0

6.0

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

100

3.0

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

RDS(ON), Drain-to-Source On Resistance

(Normalized)

ID, Drain-to-Source Current (A)

16.0

Fig. 3 - Typical Transfer Characteristics

ID = 23 A

TOP

10

11.0

VGS, Gate-to-Source Voltage (V)

1
4,5 V

20s PULSE WIDTH

Tj = 150 C

2.5

2.0

1.5

1.0

0.5

VGS = 10 V

0.1

0.0

10

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

Document Number: 91209

S-81352-Rev. A, 16-Jun-08

100

-60

-40

-20

20

40

60

TJ, Junction Temperature

80

100

120 140

160

(C)

Fig. 4 - Normalized On-Resistance vs. Temperature

IRFP23N50L, SiHFP23N50L
Vishay Siliconix

12

VGS = 0 V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd

10000

VGS, Gate-to-Source Voltage (V)

C, Capacitance (pF)

100000

Ciss
1000

Coss
100

ID = 23
VDS = 400 V
VDS = 250 V
VDS = 100 V

10

Crss
10

10

100

1000

24

120

96

QG, Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

25

ISD, Reverse Drain Current (A)

100.00

20

Energy (J)

72

48

15

10

TJ = 150 C

10.00

TJ = 25 C

1.00

VGS = 0 V

0.10
0

100

200

300

400

500

600

0.0

1.5

1.0

0.5

2.0

VSD, Source-to-Drain Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Typical Source-Drain Diode Forward Voltage

25

1000

OPERATION IN THIS AREA LIMITED

BY RDS(ON)

ID, Drain Current (A)

ID, Drain Current (A)

20

100
10us

100us
10

15

10

1ms
5

TC = 25 C
TJ = 150 C
Single Pulse
10

10ms
0

100

1000

10000

VDS, Drain-to-Source Voltage (V)

Fig. 9 - Maximum Safe Operating Area

25

50

75

100

TC, Case Temperature

125

150

(C)

Fig. 10 - Maximum Drain Current vs. Case Temperature

Document Number: 91209

S-81352-Rev. A, 16-Jun-08

IRFP23N50L, SiHFP23N50L
Vishay Siliconix

RD

VDS

VDS

90 %

VGS

D.U.T.

RG

+
- VDD

10 %
VGS

10 V
Pulse width 1 s
Duty factor 0.1 %

td(on)

Fig. 11a - Switching Time Test Circuit

td(off) tf

tr

Fig. 11b - Switching Time Waveforms

(Z thJC)

10

Thermal Response

D = 0.50
0.1

0.20
0.10

PDM

0.05
0.01

0.02
0.01

t1

SINGLE PULSE
(THERMAL RESPONSE)

t2
Notes:
1. Duty factor D =
t1 / t2
2. PeakT
J = P DM x Z thJC + T C

0.001
0.00001

0.0001

0.001

0.01

0.1

t1, Rectangular Pulse Duration (sec)

Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

750

4.5
4.0

ID = 250 A

3.5
3.0
2.5
2.0
1.5
1.0

EAS, Single Pulse Avalanche Energy (mJ)

VGS(th) Gate Threshold Voltage (V)

5.0

ID
10A
15A
BOTTOM 23A
TOP

600

450

300

150

- 75 - 50 - 25

25

50

75

100

125 150

TJ, Temperature (C)

Fig. 13 - Threshold Voltage vs. Temperature

Document Number: 91209

S-81352-Rev. A, 16-Jun-08

25

50

75

100

Starting T , Junction Temperature

150

125

(C)

Fig. 14 - Maximum Avalanche Energy s. Drain Current

IRFP23N50L, SiHFP23N50L
Vishay Siliconix

VDS
tp

15 V

VDS

Driver

D.U.T

RG

+
- VDD

IAS
20 V

tp

IAS

0.01

Fig. 15a - Unclamped Inductive Test Circuit

Fig. 15b - Unclamped Inductive Waveforms

Current regulator
Same type as D.U.T.
50 k
12 V

QG

10 V

0.2 F
0.3 F

QGS

D.U.T.

VDS

QGD

VG

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 16a - Gate Charge Test Circuit

Fig. 16b - Basic Gate Charge Waveform

Document Number: 91209

S-81352-Rev. A, 16-Jun-08

IRFP23N50L, SiHFP23N50L
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

+
-

RG

dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.

Period

D=

+
-

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
dI/dt
D.U.T. VDS Waveform
Diode Recovery
dV/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

ISD

* VGS = 5V for Logic Level Devices

Fig. 17 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91209.

Document Number: 91209

S-81352-Rev. A, 16-Jun-08