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1.
Objective
In this assignment you will solve a capacitor problem using different computational techniques.
You are expected to analyse the techniques based on their performance and to reach conclusions on
applicability of the techniques for various applications.
2.
Assessment details
The assignment contains three activities related to the same problem. You are asked to estimate the
capacitance C per unit length of a long air-filled capacitor using three techniques: finite-difference
solution using your own code, solution based on the Tubes and Slices method (TAS package) and
Finite Element solution (available within TAS package). You also need to look at an electric field
inside the capacitor.
Each student must submit an individual report. The report text (font size 12pt) is limited to 2 pages
(approximately 750 words) and a total of 5 pages including figures, tables and appendices. Content
exceeding this limit will not be considered for marking. Your report should contain:
representative plots or tables to demonstrate your results and to support your conclusions for
items listed in the marking scheme attached as Appendix A
analysis, comments and explanations of the observed results
conclusions on advantages and disadvantages of different methods and techniques
When marking the final report, credit will be particularly given for interesting comments and
observations, especially if they demonstrate that a thorough investigation has been conducted and
additional information through independent study has been acquired.
2.1. The capacitor problem
The schematic of the long air-filled capacitor is shown in Fig. 1. The origin has been placed at the
centre of the middle plate so that use can be made of symmetry and the first quadrant only needs to
be solved. The plane of symmetry, x = 0, is a flux line, so that V/x = 0. Also on y = 0, d/2<x<a/2,
V/y = 0. Correctly specified, therefore, the lower boundary consists of two segments with
different types of condition (potential and potential gradient).
Inside the capacitor, Laplace's equation for the electric potential V holds:
2V 2V
0.
x 2 y 2
(1)
The potential V0 may be taken as 100 V and the following dimensions assumed:
a = 20,
b = ??,
d = ??,
(the units of length are arbitrary, but if they are in meters the capacitance per unit length will be in
F/m). Note that the values of b and d are your personal values and will be given in a separate table.
Figure 1.
The capacitance per unit length
C
Q 4
V0 V0
d /2
q dx ,
(2)
where q is the electric charge density on the lower plate. By Gauss' theorem
div 0 E ,
(3)
where is a volumetric charge density. Applying the theorem to the middle plate
V
,
y
(4)
V
dx .
y
(5)
q 0 E y 0
and according to (2)
C
4
V0
d /2
Please note that the factor 4 in the above equation already accounts for the presence of four
identical parallel capacitors, as shown in Figure 1, while we only model one quadrant.
Equation (5) is simple to implement but its accuracy may be affected by the high field gradient
close to the edge of the electrode. Therefore, as an alternative, it might be advisable to select a
Gauss integration surface away from this edge, where field variation is less rapid. One possibility is
shown in Fig. 2 where the integration is performed half way in between the finite-difference nodes
and the relevant gradients may then be estimated using a simple two-point formula. In this case the
expression for the capacitance will take the form
d / 2 h / 2
h/2
4
V
V
dx
dy
0
V0 0 y
x
0
(6)
where h is the distance between the nodes of a regular grid. It is also possible to place the
integration surface even farther away from the electrode with suitable modifications to equation (6).
As the field variation becomes less rapid, and gradients smaller, the accuracy of the numerical
differentiation increases. You are encouraged to experiment with both equations (5) and (6).
integration of
V
y
integration of
V
x
Figure 2.
Both expressions (5) and (6) result from the same Gauss theorem (3), but numerically are likely to
give somewhat different results. Obviously, if the grid were to be made very fine (very small h) the
results would be much closer to each other.
Finally, the capacitance can also be found from energy considerations, as
Energy C
V02 QV0
E2
E2
0
dv length 0
dA , E gradV .
2
2
2
2
capacitor
section
(7)
Figure 3.
Theory. The SOR method is based on the earlier Gauss-Seidel method in which the grid of nodes is
scanned repeatedly in a systematic manner applying equation (8) to each node in turn:
Vi , j
1
Vi1, j Vi, j 1 Vi, j 1 Vi1, j .
4
(8)
A satisfactory scanning sequence is to commence at the node nearest to the origin (1,1) in Fig. 3.
Because the boundary node (1,1) is already known it is possible to calculate V at (1,2) and scan by
columns until the node (M1, N1) in the opposite corner is reached. During the scan (k+1) the
finite-difference equation for node i,j is
Vi ,( kj 1)
1 ( k 1)
Vi 1, j Vi ,( kj 11) Vi ,( kj )1 Vi ( k1,) j ,
(9)
where the new values of V are used as soon as they are available. We now define the residual, or
displacement, at node i,j as
Ri(,kj1)
1 ( k 1)
Vi 1, j Vi ,( kj 11) Vi ,( kj )1 Vi ( k1,) j Vi ,( kj ) ,
(10)
being the change that occurs in Vi,j during scan (k+1). The SOR scheme is then
Vi ,( kj 1) Vi ,( kj ) Ri(,kj1) ,
(11)
where the original residual is increased by the relaxation factor which lies in the range 1 < 2.
The value of the SOR acceleration (or relaxation) factor may be taken as = 1.0 to start with. If the
optimum value 0 of can be found for a given problem, the SOR process will converge
significantly faster than the Gauss-Seidel method. The test for the satisfactory convergence of an
iterative method can be done by comparing the maximum value of Ri,j (found during each scan)
against a small fraction of the maximum potential (V0 in this case) the so called convergence in
continuum norm C . A suitable small fraction is 10-6. It is useful to print the residuals map so that
you have a useful check on the behaviour of the solution. The maximum number of scans allowed
should be set at 10*M*N. You can also look at the global error.
At the boundary nodes, where V/n = 0 is specified, the fictitious outside nodal value of V is set
equal to the inner value. For example, at a node i,j on the boundary x = 0 (Fig. 2), where i = 1,
V0, j V2, j (since i 1 = 0 ),
(12)
V1, j
1
2V2, j Vi, j 1 Vi, j 1 .
4
(13)
Once the solution of equation (1) has been obtained, the capacitance may be found as a postprocessing exercise. This can be done by numerical integrations of either (5), or (6), or (7) (or
indeed all of them so that comparisons could be made). Take care with the numerical form of
equation (5). Instead of the usual 2-point formula, you may use the more accurate 3-point
approximation
V
1
(14)
for values of i at nodes on the lower plate (y = 0, 0 < x < d/2). Finally, you are advised to use either
trapezoidal or Simpson's rule for the numerical integration of equation (5).
You should experiment with different values of to find a near optimum value for each size of the
mesh; you should be able to find in literature simple expressions for estimating the optimum value.
Some algorithms allow for dynamic adjustment of as iterations progress. You should also use
different values of the step (h) in x and y directions to investigate how the accuracy of the solution
is affected by the refinement of the grid. A reasonable initial value of h would be 0.125, but smaller,
as well as larger, values could also be used.
3.
To get the reference value for C you need to set up the model in TAS using your individual given
dimensions for the capacitor. The error band can be significantly reduced by increasing the number
of tubes and slices but mainly by improving their orthogonally.
When working in the FEM mode of TAS, you need to analyse the effects of the number of nodes on
the accuracy of the computations, as well as to indicate what the best shape for the elements is.
You are given a skeleton FD code for you to build upon and improve. The algorithm is a very
basic implementation of equations (9)-(13), a working version of the SOR method in its simplest
possible form assuming zero initial values for potential. You are expected to enhance and extend the
code to include a number of improvements, such as finding an optimum relaxation factor, exploring
the effects of different mesh sizes, experimenting with termination criteria and incorporating the
non-zero initial values for the potential, for example by making certain crude assumptions.
Performance studies should include an analysis of the dependence of the number of iterations and
computational times as functions of the mesh size h. How do these values vary between =1 and
optimum ? Plot the dependences in a log-log scale and comment on the observations. An
approximate value of the optimum may be pre-calculated and you will need to do some literature
searches to find different possibilities. In practice it is very important to understand what value of h
is required to achieve the specified accuracy. How is the accuracy of the predictions related to
termination criteria in the code? Consider the calculations of C as a post-processing operation and
analyse the effectiveness of the different methods. Why do different approaches have different
accuracy? Which termination criterion (local or global) is better for C calculations depending on the
method? Contrast your observations with accuracy of electric field calculations near sharp edges (as
a function of the mesh step h). Are you getting the same convergence rate as for the value of C?
Explain your observations.
Analyse the effects of the initial values of potential on the number of iterations and calculation
times. You can introduce a linear interpolation between boundary values as the first step but also
consider input from TAS and from simulations at larger mesh sizes h (so called multigrid approach).
In conclusions, compare TAS, FD and FE techniques in terms of the accuracy and the time needed
to achieve the solution. In your analysis consider the time required for coding.
A detailed marking scheme is attached; this should give you an idea about what is expected in your
report. You will note that critical analysis of results, thorough investigations, relevant observations
and meaningful conclusions are essential to achieve a good mark. This coursework is open ended
in a sense that any further investigation in addition to what has been suggested is very welcome.
References
[1] P. Hammond and J.K. Sykulski: Engineering Electromagnetism, Physical Processes and
Computation, Oxford University Press, Oxford, 1994
ISBN 0 19 856289 6 (Hbk), ISBN 0 19 856288 8 (Pbk)
Deadline
Please note that you are expected to complete your work in week 6 and hand in your report by 4pm
on Thursday 5th November 2015. Any delay in handing in the report will incur a penalty in the
form of reduced final mark (at a rate of 10% reduction for each working day of late submission, up
to 5 working days, no submission is allowed after that; extension requests must be made in advance
via the Faculty Student Administration). The report should be submitted for marking in the USMC
Reception (First Floor Office). Please write clearly: ELEC2219: Electromagnetism for EEE
TAS, as appropriate, and do not forget to put your name on the cover.
Professor J.K. Sykulski
Dr I. Golosnoy
Dr. Mihai D. Rotaru
September 2015
Outstanding
1.5
1.5
1.5
Good
Poor
Absent
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Total Mark
out of 17.5