Semiconductor

Diodes

Energy Band Gap in Materials

Extrinsic Semiconductors

N-type

P-type

Typical doping level 1 part per 10 million

3

Semiconductor Diode
The semiconductor diode is formed by
bringing p and n-type materials
together (constructed from the same
base Ge or Si)

Diode Symbol
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P-N Junction (barrier) Voltage

Diode equation
I D I s (eVD

nVT

1)

where I s is the reverse saturation current

VD is the applied forward-bias voltage across the diode
n is an ideality factor which is a function of operating conditions
and physical construction; it has a range between 1 &2.
(n=1 will be assumed unless otherwise noted)
VT

kT
q

k is Boltzman constant=1.38 10-23 J/K

T is the absolute temperature in Kelvins
q is the electronic charge=1.6 10-19C
For VD 0, I D I s e

VD nVT

VT 0.26 V at room temperature

and for VD 0, I D I s
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V-I characteristic of Diode

Temperature Effect
The reverse saturation current Is
approximately doubles for every 10oC
rise in temperature.

If Is = Is1 at T = T1, then at temperature

T2, Is2 is given by,
Is2 = Is1x 2(T2 T1)/10

PIV (Peak Inverse Voltage Rating)

The maximum reverse-bias potential

that can be applied to the diode
without damaging it or causing it to
break down.

Diode Equivalent Circuit

Ideal Diode:

Piecewise Linear Model

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Diode Equivalent Circuit

Simple Diode Model Typically Used:
ID

VK=0.7 V for Si
VK=0.3 V for Ge
VK

VD

VS<VK
VS>VK

I=0
I=(VS-VK)/R

and
and

VA=0
VA= VS-VK

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A more complicated model for a diode (Do not use this

for your circuit analysis)

Follows the actual diode characteristics better

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Example 1
What will be the states
(ON/OFF) of the two
diodes, D1 and D2?
Assume the diodes to
be ideal with a forward
voltage drop of 0.7 V.
Find the currents ID1
and ID2
Answer:
D1 ON & D2 OFF

ID1=0.953 mA

ID2=0

Example 2
I1

For the circuit shown, find the

voltages V1 and V2 and the
currents I1, I2 and I3. Assume
the diodes to be ideal with a
forward voltage drop of 0.7 V.

D1

I2
R3
1 K
10 V

D2
R2
5 K

Answer:
V1=9.3 V
I1=1.51 mA
I3=0.44 mA

V2=7.53 V
I2 =1.07 mA

V1

V2

I3
R1
4 K

Zener Diode
Zener diodes are special diodes manufactured
with adequate power dissipation capabilities to
operate in the breakdown region.
Symbol:

Equivalent ckt.

Approx. Eq. ckt.

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V-I Characteristics of Zener Diode

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Zener Regulator
Vs>Vz for breakdown
Rs is the current limiting
resistance to limit the zener
current to less than its
maximum rating
Is=(Vs Vz)/Rs

Loaded Zener regulator

Vth = voltage across zener when

it is not in breakdown
= Vs x RL/(Rs+RL)

For breakdown, Vth>Vz

Is=(Vs Vz)/Rs, Is = Iz + IL

IL = VL/RL = VZ/RL
Iz = Is IL
Power dissipated by
zener diode = VzIz

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Zener Regulator

Loaded Zener regulator

contd.

Typically, for a Zener

Diode, one would specify
the zener voltage VZ and
the maximum power
dissipation PZ,max in the
zener diode.
Additionally, we may also
specify the minimum zener
current IZ,min that must flow
through the zener diode to
provide the zener action

Is=(Vs Vz)/Rs, Is = Iz + IL

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