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I. INTRODUCTION
= U[(xj ._!
+xj)/2] ,
m*(x) =mj=m*[(xj ..
(la)
+Xj)/2] ,
(1b)
(Ic)
for
xj
. t
<x <Xj
(j
= O,1,2,>o.N, N + 1)
N=10
I
8
---,.
0 ,_
.J
; j
Xj-1 Xi
Distance
FlO. I. Energy band diagram (solid line) and approximated potential function (broken line) for tile potential barrier.
1497
J. Appl. Phys. 61 (4).15 February 19B7
0021-8979/87/041497 -06$02040
@ 1987 American Institute of PhYSics
1497
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ikjx) ,
(2)
where
kj
(4)
(3)
[0 +
SI )exp[ - i(k l + I
(1 - S[ )exp[i(k/+
kl )xI]
+ kJ )x/]
-
(5)
kl + 1
1 and B N + I = 0 in Eq. (4) for j = N + 1,
we can calculate the transmission amplitude AN+- 1 and the
transmission probability D(E) as foHows:
i
total applied voltage V is expressed as V = Va + Vb + Vd ,
where Va' Vb' and Vd are the voltage drop values in the
accumulation layer, the barrier, and the depletion layer, respectively. These values and the space charge ns per unit
area in the depletion layer, which is equal to the net charge in
the accumulation layer, are determined using fonowing
equations I 2;
(7)
and
mt+l k[
S/=----.
(6)
m?
By setting Ao =
Vb = lLb[qnJ(X)]dX,
and
m*O_~IA
k
D(E) ___
-
'"
mN +
,2
N+ II
(8)
where
(9)
B. Transmission current calculation
The band diagram, used for calculating the transmission
current-voltage (I-V) characteristics for the potential barrier, is shown in Fig. 2. The solid line denotes the potential
function for the barrier, whereas the broken line denotes the
approximated potential function. As shown in Fig. 2, the
U(x,V)
Vd
= qn;/2N t-!ND
qm~
xL:
qVa
t
t
> - - - - -....
~.
[/o(E) -IN+1CE)JdEdEx
'
(13a)
qVb
Ef+qVa-qV
(12)
(11 )
qm~kT
JCE" ) =
21T2 fz3
Xln (
D(Ex , Vb)
1 + exp(Ef
+ qV;,
- Ex )lkT )
.
1 + exp(E r + qVa - qV - Ex )lkT
(130)
FIG. 2. Energy band diagram for the potential barrier under biasing conditions.
10-2--- -- -
III, EXAMPLES
lEo = 13.1(1 - x)
--
----- N=20
- - N=40,80
Cl4c)
where ma and Eo are the free electron mass and the vacuum
static dielectric constant, respectively.
0.5
~---
350A
~_I,
L\j
,j/1
r
pi
1
J
1.5
Voltage (v)
.,...
'"
o
W
--,-
-~
1.0
I' i'
i\
i \/
"
. \I . '
, v i.j
I.!
\.1
N=9
N=15
0.0 L-- _ _ _ _
ao
--lN_=_1_9_.3_9~-'-_.
_____
Q4
Energy
L__J
Q8
(eV)
~
GaAs
_ _ _ _ _
for x<0.45
for x>O.45 ,
The transmission probability is calculated in semiconductor-insulator-semiconductor (SIS) structures with a rectangular barrier and with a parabolic barrier as shown in
Figs. 3(a) and 3(b), respectively.
Figure 4(a) shows the transmission probability D for
Ex = 0.05 eV across the rectangular barrier [in Fig. 3 (a)]
with respect to VI>' In these calculations, the barrier is divided into N segments with N values ranging between 10 and 80.
There is only a slight difference in solutions for N;;.40 and
they converge to the solid curve [in Fig. 4(a)] for N;;.80.
For this case, the Airy functions can give the exact solution, 6
which coincides with the solid curve. The oscillatory behavior of D( Vb ) is presumed to be due to resonance through the
virtual states above the barrier. 16 Electron wavelengths at
the resonant states are about 80 A for Vb = 1 V and 50 A for
---,
Ex:=:O.050V
(14b)
+ 10. Ix ,
f\
(14a)
O~75ev
~EC
GaAs
--0.
1499
Y. Ando and T. Itoh
1499
J. Appl. Phys., VoL 61 , No.4, 15 February 1987
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10
AlAs
AlAs
GaAs
lo+ev
Ec
~--------
O.956eV
' - - - - " - - Ec
GaAs
0.5
0.0
Energy
1.0
(eV)
K are shown in Figs. 7(a) and 7(b). Figures 7(a) and 7(b)
correspond to the rectangular well and the parabolic wen,
respectively. In these figures, the solid lines denote the re~
suIts, including the effects of accumulating and depleting,
whereas the broken lines denote the results without these
effects. With the accumulation and depletion taken into account, the current density increases and the voltage shifts.
These results show that voltage drops at contact layers seriously affect J- V characteristics, and hence, should be taken
into account in analyzing and designing quantum size devices.
IV. APPLICATION-ANALYSIS OF HETs (HOTELECTRON TRANSISTORS)
The HET, one of the quantum size effect devices utilizing electron tunneling through potentia] barriers, was analyzed to show the feasibility of this method.
A. AnalysiS procedure for HETs
0.0
0.5
Energy
1.0
(eV)
21117
(15)
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6
(8.) Rectangular Well
E
D
-'"""~
77K
11 "" 1x10'. cm- 3
-;J
o-E'
(/)
c
OJ
OJ
''-
::J
q Vcs
(,)
0
0.0
2.0
1.0
3.0
iOOOA
120A 300A
Voltage (v)
6
~
E
()
...<
0
17K
injection through the emitter, and J CRO is the tunneling current between the collector and base when the emitter is not
connected. J CRO can be calculated similarly to J E' using substitutions Dc for DE, 1 R for fE' and lefor f B in Eq.
( 15). J:!- can be calculated as follows:
= 1 x i 0 18 cm'-3
"":;\
;:.,
:C:
(/)
(U
0
c::
Q) 2
!::
(5
J:!- (Ex) =
~
xCI
"'1
I,
"
; I
0.0
~Ex
I' \... _ _ ;
1.0
Voltage
2.0
(16)
3.0
and
(V)
FIG. 7. Current density vs applied voltage plot at 77 K, including the accumulation and depiction (solid line) and without Ihese effects (broken line).
(al calculated for the rectangular well structure shown in 'Figs. 5(a) and
(b) calculated for the parabolic well structure shown in Fig. 5(b).
l'E(Ex
=exp[ -LBlvB(Ex)rB(Ex)]'
(17)
for
E: <0.05
cV
E~
>0.2 eV,
where
E~
=Ex +qVBE
(18)
The calculated transfer ratio a = JCIJ E and differential transfer ratio a' = dJ~. I dJE are shown in Figs. 9 and 10,
respectively. The effects of accumulating and depleting are
also taken into account. a' peaks at VBE = 0.2 V, following
an initial rapid increase, and rises again slowly with VEE
increasing above 0.25 V. The .rapid increase results from the
abrupt increase in the collection efficient Dc (Ex), as the
injection energy for hot electrons is raised above the collec-
HET
HET
~
1.0
77K
1.0
.Q
.....
0
0
CIl
a::
...
.~
(/)
....,
a::
...
rn
cl'(j
(I)
0.5
.....
rn
'-
I-
0.5
.m
....,
ct!
0-
I-
....(/)<Ll
000
0.0
....
is 0.0
0.4
0.2
VSE (V)
FIG. 9. Transfer ratio vs base-emitter voltage plot at 77 K. Calculated for
the HET (shown in Fig. 8) under common emitter biasing conditions.
tor barrier. The slow increase is related to the gradual increase in the mean free path of hot electrons, as the scattering
rate saturates. The periodic structure in a', also observed in
experiments,20 is due to the quantum mechanical reflection
at the collector barrier. However, in this calculation, the
quantum mechanical reflection through the quantum well,
formed by the base layer, is not taken into account.
v. CONCLUSION
A simple method for accurately calculating the transmission current across arbitrary potential barriers is presented. By using this method, various potential barriers and
wells can be analyzed, including continuous variations of
potential and effective mass. Therefore, the present method
is applicable to heterojunction structures such as superlattice structures. Furthermore, the present method is shown to
be useful for analyzing and designing the quantum size effect
devices.
Although SIS barriers are analyzed in this paper, of
course, this calculation can be extended to the analysis of the
metal-semiconductor barriers, the metal-insulator-semiconductor barriers, and so on. Further results will be reported
elsewhere.
ACKNOWLEDGMENTS
0.0
0.2
0.4
VSE (V)
FIG. 10. Differential transfer ratio plot vs base-emitter voltage plot at 77 K.
Calculated for the HET (shown in Fig. 8) under common emitter biasing
conditions.
1502
J. App!. Phys., Vol. 61, No.4, 15 February 1987
Y. Ando and T. Itoh
1502
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