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General Description
Product Summary
ID (at VGS=-10V)
-30V
-6A
< 50m
< 85m
VDS
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
VGS
TA=25C
Continuous Drain
Current
C
Units
V
20
-6
ID
TA=70C
Maximum
-30
-5.1
IDM
-30
Avalanche Current C
IAS, IAR
17
EAS, EAR
14
mJ
VDS Spike
VSPIKE
-36
Power Dissipation B
10s
TA=25C
PD
TA=70C
3.1
TJ, TSTG
Symbol
t 10s
Steady-State
Steady-State
RJA
RJL
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-55 to 150
Typ
31
59
16
Max
40
75
24
Units
C/W
C/W
C/W
Page 1 of 6
AO4405
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Conditions
Min
ID=-250A, VGS=0V
-30
-1
TJ=55C
-5
VGS(th)
VDS=VGS ID=-250A
-1.4
ID(ON)
VGS=-10V, VDS=-5V
-30
nA
-2.4
33
50
50
70
VGS=-4.5V, ID=-4A
53
85
14
TJ=125C
gFS
Forward Transconductance
VDS=-5V, ID=-6A
VSD
IS=-1A,VGS=0V
IS
Crss
-0.8
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
100
Output Capacitance
Units
-1.9
VGS=-10V, ID=-6A
Coss
Max
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
S
V
-3.5
520
pF
100
pF
pF
7.5
11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
11
nC
4.6
nC
Qgs
Qgd
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-Off DelayTime
3.5
-1
65
VGS=0V, VDS=0V, f=1MHz
1.6
nC
2.2
nC
7.5
ns
5.5
ns
19
ns
tf
ns
trr
IF=-6A, dI/dt=100A/s
11
Qrr
5.3
ns
nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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Page 2 of 6
AO4405
40
-10V
-8V
VDS=-5V
-6V
35
25
30
-5V
20
-ID(A)
-ID (A)
25
VGS=-4.5V
20
15
15
10
-4V
125C
10
25C
5
5
VGS=-3.5V
0
0
0
0.5
80
1.5
2.5
3.5
4.5
5.5
Normalized On-Resistance
1.8
70
VGS=-4.5V
60
RDS(ON) (m
)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
40
30
VGS=-10V
20
10
VGS=-10V
ID=-6A
1.6
1.4
17
5
VGS=-4.5V
ID=-4A2
10
1.2
1
0.8
10
25
50
75
100
125
150
175
0
Temperature (C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
120
1.0E+02
ID=-6A
1.0E+01
100
40
80
-IS (A)
RDS(ON) (m
)
1.0E+00
125C
60
125C
1.0E-01
25C
1.0E-02
1.0E-03
40
1.0E-04
25C
1.0E-05
20
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4405
800
VDS=-15V
ID=-6A
700
8
Ciss
Capacitance (pF)
-VGS (Volts)
600
6
500
400
300
Coss
200
2
100
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
TA=25C
TA=100C
TA=150C
10.0
TA=125C
10.0
-ID (Amps)
Crss
10s
100s
RDS(ON)
limited
1ms
1.0
10ms
0.1
TJ(Max)=150C
TA=25C
10s
DC
0.0
1.0
0.01
10
100
1000
Time in avalanche, tA (
s)
Figure 9: Single Pulse Avalanche capability (Note C)
0.1
1
10
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
100
10000
TA=25C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
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Page 4 of 6
AO4405
Z JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RJA=75C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
10
100
1000
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Page 5 of 6
AO4405
VDC
VDC
Qgd
Qgs
Vds
DUT
Vgs
Ig
Charge
toff
ton
Vgs
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
Rg
Vgs
10%
Vds
Vds
Vds
Id
Vgs
Vgs
VDC
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-I F
-Vds
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Page 6 of 6