UNISONIC TECHNOLOGIES CO.

, LTD
18N50

Preliminary

Power MOSFET

18 Amps, 500 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 18N50 is an N-channel enhancement mode Power

MOSFET using UTCs advanced planar stripe and DMOS technology
to provide perfect performance.
This technology can withstand high energy pulse in the avalanche
and commutation mode. It can provide minimum on-state resistance
and high switching speed.
This device is generally applied in active power factor correction
and high efficient switched mode power supplies.

FEATURES

* 18A, 500V, RDS(ON)=0.265 @ VGS=10V

* High switching speed
* Typically 45nC low gate charge
* 100% avalanche tested
* Typically 25pF low CRSS
* Improved dv/dt capability

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number
Lead Free
Halogen Free
18N50L-TF1-T
18N50G -TF1-T
Note: Pin Assignment: G: Gate D: Drain

Package
TO-220F1
S: Source

www.unisonic.com.tw
Copyright 2011 Unisonic Technologies Co., Ltd

1
G

Pin Assignment
2
D

3
S

Packing
Tube

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Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
500
V
Gate to Source Voltage
VGSS
30
V
Continuous
ID
18
A
Drain Current
72 (Note 6)
A
Pulsed (Note 1)
IDM
Single Pulsed (Note 2)
EAS
945
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
23.5
mJ
Avalanche Current (Note 1)
IAR
18
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation
PD
38.5
W
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
JA
Jc

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

RATINGS
62.5
3.3

UNIT
C/W
C/W

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Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)

PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current

Forward
Reverse

SYMBOL

TEST CONDITIONS

BVDSS

VGS=0V, ID=250A
ID=250A,
BVDSS/TJ
Referenced to 25C
VDS=500V, VGS=0V
IDSS
VDS=400V, TC=125C
VGS = 30 V, VDS = 0 V
IGSS
VGS = -30 V, VDS = 0 V

ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250A
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=9A
Forward Transconductance
gFS
VDS=40V, ID=9A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=400V, VGS=10V, ID=18A
Gate-Source Charge
QGS
(Note 4,5)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=250V, ID=18A,
Turn-ON Rise Time
tR
RG=25 (Note 4,5)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =18A, VGS=0V
Body Diode Reverse Recovery Time
tRR
VGS=0V, IS=18A,
dIF/dt=100A/s (Note 4)
Body Diode Reverse Recovery Charge
QRR
Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=5.2mH, IAS=18A, VDD=50V, RG=25, Starting TJ=25C
4. ISD 18A, di/dt 200A/s, VDD BVDSS, Starting TJ=25C
4. Pulse Test : Pulse width300s, Duty cycle2%
5. Essentially independent of operating temperature
6. Drain current limited by maximum junction temperature

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

MIN

TYP

MAX UNIT

500

V
0.5

2.0

V/C
1
10
100
-100

A
A

4.0
0.220 0.265
25

2200 2860
330
430
25
40

pF
pF
pF

45
12.5
19
55
165
95
90

nC
nC
nC
ns
ns
ns
ns

60

120
340
200
190
18
72
1.4

500
5.4

nA

A
A
V
ns
C

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TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

RG

L
ISD
VGS

VDD
Driver
Same Type
as DUT

dv/dt controlled by RG
ISD controlled by pulse period

VGS
(Driver)

D=

Gate Pulse Width

Gate Pulse Period

10V

IFM, Body Diode Forward Current

ISD
(DUT)

di/dt
IRM
Body Diode Reverse Current

VDS
(DUT)

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward

Voltage Drop

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www.unisonic.com.tw

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Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS(Cont.)

Gate Charge Test Circuit

Gate Charge Waveforms

VGS

Same Type
as DUT
12V

QG

10V

200nF
50k

VDS

300nF

QGS

QGD

VGS
DUT
3mA
Charge

Unclamped Inductive Switching Waveforms

Unclamped Inductive Switching Test Circuit

2
EAS= 1
2 LIAS

VDS
RG

BVDSS
BVDSS-VDD

BVDSS

ID

IAS

10V

ID(t)
DUT

tP

VDD

VDD

VDS(t)

tP

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

Time

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Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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