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Chapter One
Section 1.3
Alternative Formulations
CONSERVATION OF ENERGY
(FIRST LAW OF THERMODYNAMICS)
An important tool in heat transfer analysis, often
providing the basis for determining the temperature
of a system.
Alternative Formulations
Time Basis:
At an instant
or
Over a time interval
Type of System:
Control volume
Control surface
Surface Phenomena
g
Ein E out :
,
Volumetric
Phenomena
g
Eg :
rate of thermal energy generation due to conversion from another enegy form
(e.g., electrical, nuclear, or chemical); energy conversion process occurs within the system.
g
E st :
Conservation
of gEnergy
g
g
E in E out + E g =
g
dEst
E st
dt
(1.11c)
(1.11b)
Closed System
Q W = Esttot
For negligible changes in potential or kinetic energy
Q W = U t
Internal thermal energy
At an instant
g
q W =
dU t
dt
(1.11a)
Example 1.3
dU t
dT
= Mc
dt
dt
Heat transfer is from the conductor (negative q )
g
Example 1.4
Latent Heat
of Fusion
U t = U 1at = M hsf
Open System
(ii) Steady State for Flow through an Open System without Phase Change or
Generation:
At an Instant of Time:
2
m ut + pv + V
+ gz + q m ut + pv + V
2
in
( pv ) flow work
( ut + pv ) i enthalpy
For an ideal gas with constant specific heat:
( pv )in ( pv )out 0
For systems with significant heat transfer:
( ) ( )
V
in
( gz )in
0
2 out
( gz )out 0
+ gz W = 0
2
out
(1.11d)
Ein
E out = 0
(1.12)
qconv
qrad
= 0
qcond
k
T1 T2
4
h (T2 T ) 2 T24 Tsur
=0
L
Methodology
KNOWN: Silicon wafer positioned in furnace with top and bottom surfaces exposed to hot
and cool zones, respectively.
FIND: (a) Initial rate of change of the wafer temperature from a value of Tw,i = 300 K, and (b)
steady-state temperature. Is convection significant? Sketch the variation of wafer temperature
with vertical distance.
SCHEMATIC:
ASSUMPTIONS: (1) Wafer temperature is uniform, (2) Hot and cool zones have uniform
temperatures, (3) Radiation exchange is between small surface (wafer) and large enclosure
(chamber, hot or cold zone), and (4) Negligible heat losses from wafer to pin holder.
ANALYSIS: The energy balance on the wafer includes convection from the upper (u) and
lower (l) surfaces with the ambient gas, radiation exchange with the hot- and cool-zone and an
energy storage term for the transient condition. Hence, from Eq. (1.11c),
Ein E out = E st
or, per unit surface area
, h + qrad
, c qcv
, u qcv
, l = cd
qrad
d Tw
dt
4
4
4
4
Tsur
, h Tw + Tsur , c Tw hu (Tw T ) hl (Tw T ) = cd
) (
d Tw
dt
(a) For the initial condition, the time rate of change of the wafer temperature is determined
using the foregoing energy balance with Tw = Tw,i = 300 K,
0.65 5.67 108 W / m2 K 4 15004 3004 K 4 + 0.65 5.67 108 W / m 2 K 4 3304 3004 K 4
( d Tw / dt )i = 104 K / s
(b) For the steady-state condition, the energy storage term is zero, and the energy balance can
be solved for the steady-state wafer temperature, Tw = Tw,ss .
4
4
0.65 15004 Tw,ss
K 4 + 0.65 3304 Tw,ss
K4
Tw,ss = 1251 K
To assess the relative importance of convection, solve the energy balances assuming no
convection. With ( d Tw / dt )i = 101 K / s and Tw,ss = 1262 K. , we conclude that the radiation
exchange processes control the initial rate of change and the steady-state temperature.
If the wafer were elevated above the present operating position, its temperature would
increase, since the lower surface would begin to experience radiant exchange with
progressively more of the hot zone. Conversely, by lowering the wafer, the upper surface
would experience less radiant exchange with the hot zone, and its temperature would decrease.
The temperature-distance relation might appear as shown in the sketch.
535 J/kgK
KNOWN: Inner surface heating and new environmental conditions associated with a spherical
shell of prescribed dimensions and material.
FIND: (a) Governing equation for variation of wall temperature with time and the initial rate of
change, (b) Steady-state wall temperature and, (c) Effect of convection coefficient on canister
temperature.