UNISONIC TECHNOLOGIES CO.

, LTD
8N50

Preliminary

Power MOSFET

8 Amps, 500 Volts

N-CHANNEL POWER MOSFET
1

The UTC 8N50 is an N-channel mode power MOSFET using

UTCs advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 8N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.

TO-220

DESCRIPTION

TO-220F1

FEATURES

* 8A, 500V, RDS(ON)=0.85 @ VGS=10V

* High Switching Speed
* 100% Avalanche Tested

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Note:

Ordering Number
Lead Free
Halogen Free
8N50L-TA3-T
8N50G-TA3-T
8N50L-TF1-T
8N50G-TF1-T
Pin Assignment: G: Gate D: Drain
S: Source

www.unisonic.com.tw
Copyright 2011 Unisonic Technologies Co., Ltd

Package
TO-220
TO-220F1

1
G
G

Pin Assignment
2
3
D
S
D
S

Packing
Tube
Tube

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Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)

PARAMETER

SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
EAR

RATINGS
UNIT
500
V
30
V
Continuous (TC=25C)
8(Note 2)
A
Drain Current
Pulsed (Note 3)
32(Note 2)
A
Avalanche Current (Note 3)
8
A
Single Pulsed (Note 4)
320
mJ
Avalanche Energy
Repetitive (Note 5)
12.5
mJ
TO-220
125
TC=25C
W
TO-220F1
42
Power Dissipation
PD
TO-220
1
W/C
Derate above 25C
TO-220F1
0.33
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55~+150
C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 10mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C
5. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
Drain-Source Voltage
Gate-Source Voltage

THERMAL DATA
PARAMETER

Junction to Ambient
Junction to Case

SYMBOL
TO-220
TO-220F1
TO-220
TO-220F1

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

JA
JC

RATINGS
62.5
62.5
1
3

UNIT
C/W
C/W

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Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)

PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250A, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250A
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=400V, ID=8A
Gate to Source Charge
QGS
(Note 6, 7)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=250V, ID=8A, RG=25
(Note 6, 7)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=8A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=8A, VGS=0V, dIF/dt=100A/s
(Note 6)
Body Diode Reverse Recovery Charge
QRR
Notes: 6. Pulse Test: Pulse width 300s, Duty cycle 2%
7. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

MIN TYP MAX UNIT

500

V
25
A
+100 nA
-100 nA

2.0
0.85

4.0

850 1130
115 155
9 13.5

pF
pF
pF

18
5
7.5
15
38
46
33

nC
nC
nC
ns
ns
ns
ns

24

40
86
102
76
8
32
1.6

44
45

A
A
V
ns
C

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Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

Gate Charge Test Circuit

Gate Charge Waveforms

VGS

Same Type
as DUT
12V

QG

10V

200nF
50k

VDS

300nF

QGS

QGD

VGS
DUT
3mA
Charge

Unclamped Inductive Switching Waveforms

Unclamped Inductive Switching Test Circuit

2
EAS= 1
2 LIAS

VDS
RG

BVDSS
BVDSS-VDD

BVDSS

ID

IAS

10V

ID(t)
DUT

tP

VDD

VDD

VDS(t)

tP

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

Time

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Preliminary

Power MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

RG

L
ISD
VGS

VDD
Driver
Same Type
as DUT

dv/dt controlled by RG
ISD controlled by pulse period

VGS
(Driver)

D=

Gate Pulse Width

Gate Pulse Period

10V

IFM, Body Diode Forward Current

ISD
(DUT)

di/dt
IRM
Body Diode Reverse Current

VDS
(DUT)

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward

Voltage Drop

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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