Name: Goh Kee Boon

Tutorial 1:
Microwave oscillators & low power amplifiers are made from:
1)
2)
3)
4)
5)
6)

Bipolar transistors
Field effect transistors (FETs)
High electron mobility transistors (HEMTs)
Varactor multipliers
IMPATTS (Impact ionization Avalanche Transit-Time diode)
Transferred electron devices (Gunn devices)

Briefly explain each component (max 1 page).

Bipolar transistor is a semiconductor device commonly used for amplification. The
device can amplify analog or digital signals. It can also switch DC or function as an oscillator.
Also, a bipolar transistor amplifies current, but it can be connected in circuits designed to
amplify voltage or power. Bipolar devices can switch signals at high speeds, and can be
manufactured to handle large currents so they can serve as high power amplifiers in audio
equipment and in wireless transmitters.
Field effect transistor is used for weak signal amplification, for example: amplifying
wireless signals. The device can amplify analog or digital signals. It can also switch DC or
function as an oscillator. They are preferred in circuits and systems which requires high
impedance. The conductivity of FET depends on the electrical diameter of the channel. A small
change in gate voltage can cause a large variation in the current from the source to the drain.
High electron mobility transistor is a form of field effect transistor, which is used to
provide very high levels of performance at microwave frequencies. It offers a combination of
low noise figure combined with the ability to operate at the very high microwave frequencies.
Accordingly the device is used in areas of RF design where high performance is required at very
high RF frequencies.
Varactor multiplier diodes generally exhibit a larger capacitance variation between zero
volts and minus six volts reverse bias. The use of these diodes results in high efficiency, high
output power and low order multiplication (N< 4).
ranging from 10 MHz to 70 GHz.

They provide broadband performance

The IMPATT diode is a RF semiconductor that is used for generating microwave radio
frequency signals. IMPATT diode can operate at frequencies between about 2 or 100 GHz or
more. The main advantage of this microwave diode is relatively high power capability. It has
also high stable frequency synthesizers. But IMPATT diodes also generate high level of phase
noise. It is used in alarms, radar and detectors using RF technology.
Gunn diodes are widely used in microwave RF applications for frequencies between 1
and 100 GHz. It is used for generating microwave RF signals or sometimes it can also be used
for an amplifier. Gunn diode does not contain PN diode junction. But it has a voltage controlled
negative resistance.