NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ZTX689B
ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
PARAMETER

SYMBOL

MIN.

Transition Frequency

fT

150

Input Capacitance

Cibo

Output Capacitance
Switching Times

TYP.

MAX.

UNIT

CONDITIONS.

MHz

IC=50mA, VCE=5V
f=50MHz

200

pF

VEB=0.5V, f=1MHz

Cobo

16

pF

VCB=10V, f=1MHz

ton
toff

30
800

ns
ns

IC=500mA, IB!=50mA
IB2=50mA, VCC=10V

THERMAL CHARACTERISTICS
SYMBOL
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

Thermal Resistance:Junction to Ambient1

Junction to Ambient2
Junction to Case

C
B

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

PARAMETER

ZTX689B

ISSUE 1 MAY 94
FEATURES
* 20 Volt VCEO
* Gain of 400 at IC=2 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers

MAX.

UNIT

175
116
70

C/W
C/W
C/W

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

20

Collector-Emitter Voltage

VCEO

20

Emitter-Base Voltage

VEBO

Peak Pulse Current

ICM

Continuous Collector Current

IC

Practical Power Dissipation*

Ptotp

1.5

Ptot

1
5.7

W
mW/C

-55 to +200

Power Dissipation

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

at Tamb=25C
derate above 25C

Operating and Storage Temperature Range

Tj:Tstg

*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at Tamb = 25C)

200

Thermal Resistance (C/W)

Max Power Dissipation - (Watts)

2.5
2.0

C
1.5

Am

1.0

0.5
0

-40 -20

20 40

bie

as

nt t

te

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=1 (D.C.)

t1

D=t1/tP
tP

100

D=0.5

D=0.2
D=0.1
Single Pulse

0
0.0001

0.001

0.01

0.1

10

100

T -Temperature (C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-236

PARAMETER

SYMBOL

MIN.

UNIT

CONDITIONS.

Collector-Base Breakdown
Voltage

V(BR)CBO

20

TYP.

MAX.

IC=100A

Collector-Emitter Breakdown
Voltage

V(BR)CEO

20

IC=10mA*

Emitter-Base Breakdown
Voltage

V(BR)EBO

IE=100A

Collector Cut-Off Current

ICBO

0.1

VCB=16V

Emitter Cut-Off Current

IEBO

0.1

VEB=4V

Collector-Emitter Saturation
Voltage

VCE(sat)

0.1
0.5

V
V

IC=0.1A, IB=0.5mA*
IC=2A, IB=10mA*

Base-Emitter
Saturation Voltage

VBE(sat)

0.9

IC=1A, IB=10mA*

Base-Emitter
Turn-On Voltage

VBE(on)

0.9

IC=1A, VCE=2V*

Static Forward Current

Transfer Ratio

hFE

500
400
150
3-235

IC=0.1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ZTX689B
ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
PARAMETER

SYMBOL

MIN.

Transition Frequency

fT

150

Input Capacitance

Cibo

Output Capacitance
Switching Times

TYP.

MAX.

UNIT

CONDITIONS.

MHz

IC=50mA, VCE=5V
f=50MHz

200

pF

VEB=0.5V, f=1MHz

Cobo

16

pF

VCB=10V, f=1MHz

ton
toff

30
800

ns
ns

IC=500mA, IB!=50mA
IB2=50mA, VCC=10V

THERMAL CHARACTERISTICS
SYMBOL
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

Thermal Resistance:Junction to Ambient1

Junction to Ambient2
Junction to Case

C
B

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

PARAMETER

ZTX689B

ISSUE 1 MAY 94
FEATURES
* 20 Volt VCEO
* Gain of 400 at IC=2 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers

MAX.

UNIT

175
116
70

C/W
C/W
C/W

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

20

Collector-Emitter Voltage

VCEO

20

Emitter-Base Voltage

VEBO

Peak Pulse Current

ICM

Continuous Collector Current

IC

Practical Power Dissipation*

Ptotp

1.5

Ptot

1
5.7

W
mW/C

-55 to +200

Power Dissipation

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

at Tamb=25C
derate above 25C

Operating and Storage Temperature Range

Tj:Tstg

*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at Tamb = 25C)

200

Thermal Resistance (C/W)

Max Power Dissipation - (Watts)

2.5
2.0

C
1.5

Am

1.0

0.5
0

-40 -20

20 40

bie

as

nt t

te

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=1 (D.C.)

t1

D=t1/tP
tP

100

D=0.5

D=0.2
D=0.1
Single Pulse

0
0.0001

0.001

0.01

0.1

10

100

T -Temperature (C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-236

PARAMETER

SYMBOL

MIN.

UNIT

CONDITIONS.

Collector-Base Breakdown
Voltage

V(BR)CBO

20

TYP.

MAX.

IC=100A

Collector-Emitter Breakdown
Voltage

V(BR)CEO

20

IC=10mA*

Emitter-Base Breakdown
Voltage

V(BR)EBO

IE=100A

Collector Cut-Off Current

ICBO

0.1

VCB=16V

Emitter Cut-Off Current

IEBO

0.1

VEB=4V

Collector-Emitter Saturation
Voltage

VCE(sat)

0.1
0.5

V
V

IC=0.1A, IB=0.5mA*
IC=2A, IB=10mA*

Base-Emitter
Saturation Voltage

VBE(sat)

0.9

IC=1A, IB=10mA*

Base-Emitter
Turn-On Voltage

VBE(on)

0.9

IC=1A, VCE=2V*

Static Forward Current

Transfer Ratio

hFE

500
400
150
3-235

IC=0.1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*

ZTX689B
TYPICAL CHARACTERISTICS
Tamb=25C

IC/IB=200
IC/IB=100
IC/IB=10

0.8

VCE(sat) - (Volts)

VCE(sat) - (Volts)

0.8

0.6

0.4

0.2

0.01

0.1

0.4

10

0.1

10

VCE(sat) v IC

VCE(sat) v IC

VCE=2V
1.6

1.0

1K

0.8
0.6

500

0.4
0.2

VBE(sat) - (Volts)

1.5K

1.2

1.4

-55C
+25C
+100C
+175C

IC/IB=100

1.2
1.0
0.8
0.6
0.4
0.2

0.01

0.1

10

1.4

VBE(sat) v IC

-55C
+25C
+100C
+175C

VCE=2V

1.0
0.8
0.6
0.4
0.2
0

hFE v IC

1.2

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

1.6

0.01

IC - Collector Current (Amps)

10

VBE - (Volts)

0.01

IC - Collector Current (Amps)

hFE - Typical Gain

hFE - Normalised Gain

0.6

IC - Collector Current (Amps)

+100C
+25C
-55C

1.4

IC/IB=100

0.2

1.6

-55C
+25C
+100C
+175C

0.01

0.1

Single Pulse Test at Tamb=25C

0.1

0.01
0.1

10

D.C.
1s
100ms
10ms
1.0ms
0.1ms

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-237

10

100