UTC A928A

PNP EPITAXIAL SILICON TRANSISTOR

AUDIO POWER AMPLIFIER

FEATURES
*Collector Dissipation Pc=1 Watt
*3 Watt Output Application

TO-92L

1:EMITTER

2: COLLECTOR

3: BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNIT

VCBO
VCEO
VEBO
Pc
Ic
Tj
TSTG

-30
-30
-5
1
-2
150
-55 ~ +150

V
V
V
W
A
C
C

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
Junction Temperature
Storage Temperature

ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-base breakdown voltage

Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Base-emitter on voltage
Collector-emitter saturation voltage
Output capacitace
Current gain bandwidth product

BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VBE(on)
VCE(sat)
Cob
fT

Ic=-100A,IE=0
Ic=-10mA,IB=0
IE=-1mA,Ic=0
VCB=-30V,IE=0
VBE=-5V,Ic=0
VCE=-2V,Ic=-500mA
VCE=-2V,Ic=-500mA
Ic=-1.5A,IB=-0.03A
VCB =-10V, IE =0,f=1MHz
VCE=-2V,Ic=-500mA

-30
-30
-5

UTC

TYP

MAX

-100
-100
320
-1
-2

100

48
120

UNISONIC TECHNOLOGIES CO., LTD.

UNIT
V
V
V
nA
nA
V
V
pF
MHz

QW-R202-003,A

UTC A928A

PNP EPITAXIAL SILICON TRANSISTOR

CLASSIFICATION OF hFE
RANK
RANGE

O
100-200

Y
160-320

TYPICAL CHARACTERISTIC CURVES

FIG.1 STATIC CHARACTERISTIC

FIG.2 BASE-EMITTER ON VLOTAGE

-1400

IB=-7mA

-1200

IB=-6mA
-1000
IB=-5mA
-800

IB=-4mA

-600

IB=-3mA

-400

IB=-2mA

-200

IB=-1mA

0
0

-2

-4

-6

-8

-10 -12 -14

IC (mA),COLLECTOR CURRENT

IC (mA),COLLECTOR CURRENT

-1400

-1200

VCE=-2V

-1000
-800
-600
-400
-200
0

-16

0 -0.2 -0.4

VCE(V),COLLECTOR-EMITTER VOLTAGE

500
VCE=-2V

100
50
30
10
-1

-3

-10 -30 -100 -300 -1000

-3000

-1
-0.5

Ic=50l B
Ta=25C

-0.3
-0.1
-0.05
-0.03
-0.01
-1

-3

-10 -30 -100 -300 -1000

Ic(mA),COLLECTOR CURRENT

FIG.5 POWER DERATING

FIG.6 SAFE OPERATING AREA

1.2
1.0
0.8
0.6
0.4
0.2
0
0

-3

Ic(mA),COLLECTOR CURRENT

ID (mA),COLLECTOR CURRENT

PD (W),POWER DISSIPATION

FIG.4 COLLECTOR-EMITTER SATURATION VOLTAGE

1000
300

VBE(V),BASE-EMITTER VOLTAGE

VCE(sat)(V),SATURATION VOLTAGE

hFE DC CURRENT GAIN

FIG.3 DC CURRENT GAIN

-0.6 -0.8 -1.0 -1.2 -1.4

20

40

60

80 100 120 140

Ta(C),AMBIENT TEMPERATURE

UTC

160

-5
-3

-3000

Ic(MAX) PULSE
Ic(MAX)

-1
-0.5
-0.3

Ta=25C
D.C
OPERATION

1ms
1s

-0.1
-0.05
-0.03
-0.01
-0.1 -0.3 -0.5 -1

VCEO MAX

-3 -5

-10

-30 -50 -100

VCE(V), COLLECTOR EMITTER VOLTAGE

UNISONIC TECHNOLOGIES CO., LTD.

QW-R202-003,A

UTC A928A

PNP EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UTC

UNISONIC TECHNOLOGIES CO., LTD.

QW-R202-003,A