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BVDSS
30V
R DS(ON)
17m
Fast switching
ID
G
D
40A
TO-220
Description
G
S
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
20
ID @ TC=25C
40
ID @ TC=100C
30
IDM
169
PD @ TC=25C
50
0.4
W/C
TSTG
-55 to 150
TJ
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Max.
2.5
C/W
Rthj-a
Max.
62
C/W
Rev.2.01 7/01/2004
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1 of 6
SSM40N03P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
BVDSS
BV DSS/ Tj
0.037
V/C
RDS(ON)
VGS=10V, ID=20A
14
17
VGS=4.5V, ID=16A
20
23
VDS=VGS, ID=250uA
VDS=10V, ID=20A
26
VDS=30V, VGS=0V
uA
VDS=24V,VGS=0V
25
uA
Gate-Source Leakage
VGS= 20V
100
nA
ID=20A
17
nC
VGS(th)
gfs
Forward Transconductance
VGS=0V, ID=250uA
IDSS
IGSS
Qg
Qgs
Gate-Source Charge
VDS=24V
nC
Qgd
VGS=5V
10
nC
VDS=15V
7.2
ns
td(on)
tr
Rise Time
ID=20A
60
ns
td(off)
RG=3.3 ,VGS=10V
22.5
ns
tf
Fall Time
RD=0.75
10
ns
Ciss
Input Capacitance
VGS=0V
800
pF
Coss
Output Capacitance
VDS=25V
380
pF
Crss
f=1.0MHz
133
pF
Min.
Typ.
40
169
1.3
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Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Forward On Voltage
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Rev.2.01 7/01/2004
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2 of 6
SSM40N03P
150
T C =25 C
150
V G =10V
V G =8.0V
V G =8.0V
ID , Drain Current (A)
T C =150 o C
V G =10V
V G =6.0V
100
V G =4.0V
50
100
V G =6.0V
50
V G =4.0V
V G =3.0V
V G =3.0V
0
0
0
10
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1.80
28
I D = 2 0A
I D =20A
26
T C =25 o C
V G =10V
1.60
Normalized RDS(ON)
24
RDSON (m )
22
20
18
1.40
1.20
1.00
16
0.80
14
0.60
12
3
10
11
V GS (V)
50
100
150
T j , Junction Temperature ( C)
Rev.2.01 7/01/2004
-50
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SSM40N03P
50
60
45
50
40
40
30
PD (W)
35
25
30
20
20
15
10
10
5
0
25
50
75
100
125
150
50
100
150
T c ,Case Temperature ( C)
T c , Case Temperature ( C)
Case Temperature
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1000
DUTY=0.5
100
ID (A)
10us
100us
10
1ms
10ms
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
t
0.01
T c =25 C
Single Pulse
100ms
1
1
10
100
0.01
0.00001
0.0001
V DS (V)
0.01
0.1
Rev.2.01 7/01/2004
0.001
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SSM40N03P
f=1.0MHz
10000
16
Id=20A
14
V D =20V
12
V D =24V
10
C (pF)
V D =16V
Ciss
1000
Coss
4
Crss
0
100
0
10
15
20
25
30
35
40
13
17
21
25
29
V DS (V)
100
T j = 150 o C
10
VGS(th) (V)
IS (A)
T j = 25 o C
1
1
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
Rev.2.01 7/01/2004
50
100
150
T j , Junction Temperature ( o C )
V SD (V)
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SSM40N03P
VDS
90%
RD
VDS
TO THE
OSCILLOSCOPE
0.5x RATED VDS
RG
10%
+
S
10 V
VGS
VGS
td(on)
td(off) tf
tr
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VG
VDS
5V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
1~ 3 mA
IG
ID
Charge
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 7/01/2004
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