A Seminar Report On

MAGNETOELECTRIC RANDOM
ACCESS MEMORY
(MeRAM)

Submitted in partial fulfilment for the

Degree of Bachelor of Technology in
Electronics And Communication

Submitted by
Alaknanda Agarwal

Under the guidance of

Prof. Kiran Dange

USHA MITTAL INSTITUTE OF TECHNOLOGY

SNDT WOMENS UNIVERSITY
SANTACRUZ(W)
MUMBAI
2015-2016
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CERTIFICATE

This is to certify that Alaknanda Agarwal has completed the Seminar

report on the topic Magnetoelectric Random Access Memory - MeRAM
satisfactorily in partial fulfillment for the B.Tech Degree in Electronics And
Communication under the guidance of Prof. Kiran Dange during the year
2015 as prescribed by Usha Mittal Institute of Technology, SNDT Womens
University, Santacruz(w), Mumbai.

Guide
Prof. Kiran Dange

Head Of Department
Santoshi Pote

Principal
Dr. Sanjay Pawar

Examiner 1

Examiner 2

ACKNOWLEDGEMENT

I take great pleasure in expressing my gratitude to all those who have contributed
to and motivated me during my project work. A report of this magnitude would
not have been come into reality without the able guidance, support and wishes of
all those who stood by us in its development. I wish to give my special thanks to
Prof. Kiran Dange , for her timely advice and guidance. Hence, with deep sense
of gratitude, I would like to acknowledge the inspiring guidance of our teacher. I
acknowledge the department for the availability of lab facilities and library.

DATE:

Alaknanda Agarwal

Abstract
A computer consists of two key components: a central processing unit to perform
calculations and logical operations, and a memory bank to store instructions and
data. This is the basic recipe.
No existing form of memory is good at everything. So to move instructions and
data as fast as possible, engineers have had to compromise. Todays computers use
a smorgasbord of different memory technologies, exploiting the best parts of each.
This is far from ideal. One of the biggest energy drains comes from shuttling data
around the CPU and all the levels of memory that surround it. Also, our fastest
memories lose their data if power isnt continuously supplied to them. And the
memories that are most compactthose that can store large numbers of bits in a
small areaare slow, which is the main reason it takes so long for our gadgets and
computers to wake up from sleep.
Those of us who work on alternative memories have long sought a way past these
limitations. Weve dreamed of a memory that must be fast, to minimize the delays
associated with reading and writing data, and it must consume little power every
time it is used. We should be able to manufacture it on the same chip as a CPU,
allowing us to put it close to the computational action, and be able to make it
dense enough to compete with existing memories on cost. At the same time, we
would like it to be nonvolatileableto retain data without having to continuously
draw powerso it can be shut down when it isnt needed.
A new type of memory being developed is one of the most promising candidates: aform of magnetic memory called magnetoelectric random access memory
(MeRAM).

Contents
Abstract

1 Introduction and Brief History

1.1 Random access memory (RAM) . . . . . . . . . . .
1.1.1 Static RAM (SRAM) . . . . . . . . . . . . .
1.1.2 Dynamic random-access memory(DRAM) .
1.1.3 Ferroelectric RAM(FRAM) . . . . . . . . .
1.1.4 Resistive random-access memory(RRAM) .
1.1.5 Magnetoresistive RAM(MRAM) . . . . . . .
1.2 Read Only Memory (ROM) . . . . . . . . . . . . .
1.2.1 Masked ROM . . . . . . . . . . . . . . . . .
1.2.2 Programmable Read Only Memory(PROM)
1.2.3 Erasable Programmable ROM (EPROM) . .
1.2.4 Electrically Erasable PROM (EEPROM) . .
1.2.5 Flash memory . . . . . . . . . . . . . . . . .
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Working
2.1 Magnetoresistive RAM (MRAM) . . . . . . . . . . . . . . . . . . .
2.1.1 Working principle . . . . . . . . . . . . . . . . . . . . . . . .
2.1.2 Internal Structure of MRAM . . . . . . . . . . . . . . . . .
2.1.3 Working of Classical MRAM . . . . . . . . . . . . . . . . . .
2.1.4 Working of Spin Transfer Torque magnetic RAM (STT-RAM)
2.1.5 Disadvantages of MRAM . . . . . . . . . . . . . . . . . . . .
2.2 Magnetoelectric Random Access Memory (MeRAM) . . . . . . . . .

3 Applications and future scope of MeRAM

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4 Comparitive Study
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4.1 MRAM vs. MeRAM . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.2 Advantages of MeRAM over other memories . . . . . . . . . . . . . 21

5 References

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List of Figures
1.1

Internal Structure of ROM - an example. . . . . . . . . . . . . . . .

2.1
2.2
2.3
2.4

Magnetic Junction Tunnel. . .

Internal structure of MRAM.
Write operation in MRAM. .
MeRAM. . . . . . . . . . . . .

4.1
4.2

Comparision of MRAM with previous permissions. . . . . . . . . . . 19

A Schematic of MeRAM . . . . . . . . . . . . . . . . . . . . . . . . 20

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Chapter 1
Introduction and Brief History
A ll storage devices are characterized with the following features:
Speed
Volatility
Access method
Portability
Cost and capacity
A bit is the smallest unit of data in a computer and can either store a 0 or 1.Bytes
are typically a sequence of eight bits put together to create a single computer alphabetical or numerical character.More often referred to in larger multiples, bytes
may appear as Kilobytes (1,024 bytes), Megabytes (1,048,576 bytes), GigaBytes
(1,073,741,824).Bytes are used to quantify the amount of data digitally stored (on
disks, tapes) or transmitted (over the internet), and are also used to measure the
memory and document size.
The Term Computer Memory is defined as one or more sets of chips that store
Data/program instructions, either temporarily or permanently. It is the critical
processing component in any computer. The PCs use several different types.They
are :
1. Main Memory / Primary Memory units - The RAM and ROM are examples of
main memory; this is the memory the microprocessor uses in executing and storing
programs. It should be fast enough to keep up with the execution speed of the
microprocessor, and thus it should be random access memory.
2. Secondary Memory/Auxiliary Memory - Also termed as auxiliary or backup
storage, it is typically used as a supplement to main storage. It is much cheaper
4

than the main storage and stores large amount of data and instructions permanently. Hardware devices like magnetic tapes and disks fall under this category.
Computers memory can be classified into two types RAM and ROM.

1.1

Random access memory (RAM)

is the best known form of computer memory. RAM is considered random access because you can access any memory cell directly. It allows data items to
be accessed (read or written) in almost the same amount of time irrespective of
the physical location of data inside the memory. Random access memory is the
temporary memory of a computer. RAM is normally associated with volatile types
of memory (such as DRAM memory modules), where stored information is lost if
power is removed, although many efforts have been made to develop non-volatile
RAM chips.the different types of RAM are:

1.1.1

Static RAM (SRAM)

SRAM is a random access memory (RAM) is made up of flip flops, and it stores
the bit as a voltage. Each memory cell requires six transistors, thus thie memory
chip has low density but high speed.This memory is more expensive and consumes
more power than DRAM described below. SRAM is used for a computerscache
memory in high speed processors(Intel 486 and Pentium),and as part of therandom
access memory digital-to-analog converteron a video card. In addition, high-speed
cache is also included external to the processor to improve the system performance.

1.1.2

Dynamic random-access memory(DRAM)

DRAM is a type ofrandom-access memorythat is made up of MOS transistor gates.

It stores eachbitof data in a separatecapacitor within anintegrated circuit as a
charge. The capacitor can be either charged or discharged; these two states are
taken to represent the two values of a bit, conventionally called 0 and 1. Since
even nonconducting transistors always leak a small amount, the capacitors will
slowly discharge, and the information eventually fades unless the capacitor charge
isrefreshedperiodically. Because of this refresh requirement, it is adynamicmemory. The advantage of DRAM is its structural simplicity: only onetransistorand
a capacitor are required per bit, compared to four or six transistors in SRAM.
5

This allows DRAM to reach very highdensities. As this form of memory is less
expensive to produce than static RAM, it is the predominant form of computer
memory used in modern computers. Also, its power consumption is lower than
SRAM.

1.1.3

Ferroelectric RAM(FRAM)

FRAM is arandom-access memorysimilar in construction toDRAMbut uses aferroelectriclayer instead of adielectriclayer to achieve non-volatility. It is a memory
technology that combines the best of Flash and SRAM. It is non-volatile like
Flash, but offers fast and low power writes. FRAM stores data as a polarization of
a ferroelectric material (Lead-Zirkonate-Titanate). As an electric field is applied,
dipoles shift in a crystalline structure to store information.

1.1.4

Resistive random-access memory(RRAM)

RRAM is a type ofnon-volatile(NV)random-access(RAM) computer memory that

works by changing the resistance across adielectricsolid-state material. Although
commonly anticipated as a replacement technology forflash memory, the cost benefit and performance benefit of RRAM have not been obvious enough to most
companies to proceed with the replacement.

1.1.5

Magnetoresistive RAM(MRAM)

MRAM is a form of non-volatile RAM memory technology that uses magnetic

charges to store data instead of electric charges.In the early 1990s the company
Honeywell conceived a new class of Magnetoresistence memory devices which offered promise for high density, random access and nonvolatile memory.

1.2

Read Only Memory (ROM)

The ROM is a non volatile memory; it retains stored information even if the
power is turned off. This memory is used for programs and data that need not
be altered. As the name suggests, the information can be read only, which means
that once a bit pattern is stored, it is permanent or at least semi-permanent. The
permanent group includes two types of memory - masked ROM and PROM. The
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Figure 1.1: Internal Structure of ROM - an example.

semi-permanent group includes two types - EPROM and EEPROM.
The concept underlying the ROM can be explained with the diodes arranged in
a matrix format, as shown in the figure. The horizontal lines are connected to
the vertical lines only through the diodes and not where they appear to cross in
the diagram. Each of the horizontal lines can be viewed as a register with binary
addresses ranging from 000 to 111; information is stored by the diodes in the
registers as 0s or 1s. The presence of a diode stores 1, and its absence stores 0.
When a register is selected, the voltage of that line goes high, and the output lines,
where the diodes are connected, go high. For example, when the memory register
111 is selected, the data byte 0111 1000 (78H) can be read at the data lines D7-D0.
The diode representation is a simplified version of the actual MOSFET memory
cell. The manufacturer of the ROM designs the MOSFET matrix according to the
information to be stored; therefore, information is permanently recorded in the
ROM.

1.2.1

Masked ROM

In this ROM, a bit pattern is permanently recorded by masking and metalization

process. Memory manufacturers are generally equipped to do this process. It is an
expensive and specialized process, but economical for large production quantities.

1.2.2

Programmable Read Only Memory(PROM)

This memory has nichrome or polysilicon wires arranged in a matrix; these wires
can be functionally viewed as diodes or fuses. This memory can be programmed
by the user using a special PROM programmer that selectively burns the fuses
according to the bit pattern to be stored. The process is known as burning the
PROM, and the information stored is permanent.

1.2.3

Erasable Programmable ROM (EPROM)

This memory stores a bit by charging the floating gate of an FET. Information is
stored by using an EPROM programmer, which applies high voltages to charge the
gate. All the information can be erased by exposing the chip to ultraviolet light
through its quartz window, and the chip can be reprogrammed. The disadvantages
of EPROM are - it must be taken out of the circuit to erase it, the entire chip
must be erased, and the erasing process takes 15-20 minutes.

1.2.4

Electrically Erasable PROM (EEPROM)

It is functionally similar to EPROM, except that information can be altered by

using electrical signals at the register level rather than erasing all the information.
This has an advantage in field and remote control applications. In microprocessor
systems, software update is a common occurence. If EEPROMs are to be used in
the systems, they can be updated from a central computer by using a remote link.
However, this memory is expensive as compared to EPROM or flash memory.

1.2.5

Flash memory

This is a major variation of EEPROM that is becoming popular. The major

difference between the flash memory and EEPROM is in the erasure procedure:
the EEPROM can be erased at a register level, but the flash memory must be
erased either in its entirety or at the sector level. These memory chips can be
erased and programmed at least a million times. This memory is ideally suited for
low power systems.

Chapter 2
Working
W eve seen earlier the different types of memories before MRAM, their advantages and disadvantages. SRAM is the fastest memory, but costly and volatile.
DRAM is also volatile and also slower than SRAM. Other non volatile memories
like flash, are very dense and hence cheap, but very slow, even slower than DRAM.
It also requires large voltages to operate. These shortcomings have led memory
researchers to consider alternative, nonvolatile memories that use spin. Spin is a
basic quantum-mechanical property of subatomic particles, such as electrons. Inmagnetic materials such as iron, cobalt, and nickel, it is the spins of the electrons
that give those metals their overall magnetic propertiesthat is, their north and
south poles. It is what gives the material its magnetization.
MeRAM, which stands for magnetoelectric RAM, is an improvement on one advanced RAM technology known as MRAM, or Magnetoresistive RAM. Thus, we
will first understand the working of MRAM memory and then see what changes
have been made in the working of MeRAM from that of MRAM.

2.1

Magnetoresistive RAM (MRAM)

MRAM is a memory (RAM) technology that uses electron spin to store information
(based on Spintronics). MRAM has been called the ideal memory, potentially
combining the density of DRAM with the speed of SRAM and non-volatility of
FLASH memory or hard disk, and all this while consuming a very low amount of
power. MRAM can resist high radiation, and can operate in extreme temperature
conditions, very suited for military and space applications.

2.1.1

Working principle

MRAM works on the principle Magnetoresistance. The change in resistance with

the magnetic state of the device is an effect known as Magnetoresistance. The
resistance with which the magnetic state is associated is measured on the basis of
the magnetic moment of the inherent layers of the MRAM.

2.1.2

Internal Structure of MRAM

MRAM is constituted of various storage elements called Magnetic Tunnel Junctions (MTJ) integrated with CMOS processing.
Magnetic Tunnel Junctions - A magnetic tunnel junction (MTJ) can be
considered as a spintronic device since it is composed of two ferromagnetic
materials, such as nickel, cobalt or iron, separated by an ultrathin layer
of dielectric insulator. It exhibits two resistances, low or high depending
on the relative direction of ferromagnet magnetizations, parallel (P) or antiparallel (AP), respectively. The insulating layer is so thin that electrons
can tunnel through the barrier if a bias voltage is applied between the
two metal electrodes. In MTJs the tunneling current depends on the relative orientation of magnetizations of the two ferromagnetic layers, which
can be changed by an applied magnetic field. This phenomenon is called
tunnel magnetoresistance (TMR). Thus, Each MTJ is composed of two
layers (ferromagnetic plates), fixed and free separated by a thin dielectric
material. In the fixed layer the magnetic polarity of the electrons in it is

Figure 2.1: Magnetic Junction Tunnel.

fixed. Whereas, in the free Layer, magnetic polarity is subject to change
in accordance with the magnetic field which is the resultant of the applied
current.
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Each MRAM memory element is connected to a transistor that performs

the function of read addressing for an array of memory elements. To write
a memory state, i.e. to reverse the magnetic moment direction in the storage layer, in a two dimensional array of memory elements, an x-y grid of
conducting wires are laid over and under the memory elements, as shown
in Figure 3. For writing a selected element, the two corresponding conducting wires are activated with current pulses, generating a magnetic field
along the long-axis (x-component of the field) and a magnetic field along
the short-axis (y-component) simultaneously.

Figure 2.2: Internal structure of MRAM.

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2.1.3

Working of Classical MRAM

In the junction, one of the magnetic layers is pinned, which means the direction of
its magnetization is fixed to serve as a reference. The other magnetic layer, which
is referred to as the free layer, is where information is stored. The free layers
magnetization can be switched so that its either oriented in the same direction
as the pinned layer or 180degrees in the other direction.The MTJ device has a
low resistance when the magnetic moment of the free layer is parallel to the fixed
layer and a high resistance when the free layer moment is oriented anti-parallel
to the fixed layer moment. The orientation of this free layer affects how readily
current can quantum mechanically tunnel across the device, through the insulating
barrier. So the value of the resistance of the device indicates the orientation of
the free-layer magnetization, and thus whether the bit is 0 or 1. The data is
stored as a magnetic state rather than a charge, and sensed by measuring the
resistance without disturbing the magnetic state. The magnetic polarization does
not leak away with time like charge does, so the information is stored even when
the power is turned off.Switching the magnetic polarization between the two states
does not involve actual movement of electrons or atoms, and thus no known wearout mechanism exists.
The data is stored by switching the polarity of one of the ferromagnetic plates in
the spin valve to represent either a 0 or a 1 in conventional computer logic. The
current pulses are passed through a digit line and a bit line, writing only the bit
at the cross point of those two lines.

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Figure 2.3: Write operation in MRAM.

The data may then be read by utilizing the fact that the electrical resistance
changes due to the orientation of the fields on the two plates of the MRAM bit.
The target bits isolation transistor is turned on to bias the MTJ, and the resulting
current is compared to a reference to determine if the resistance state is low or
high using the sense line.
Smaller transistors have to contend with higher leakage currents.Leakage current
translates into static power consumption, the power that a chip consumes even
when it is sitting and doing nothing. This power limits greatly the miniaturization
and improvement of electronic devices. Beyond electrical charge, devices based on
spintronics attract a broad attention and show performance advantages in many
aspects.

2.1.4

Working of Spin Transfer Torque magnetic RAM

(STT-RAM)

Read Operation
STT-MRAM, reading is carried out by measuring the electrical resistance of
the cell. A particular cell is selected by powering an associated transistor
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that switches current from a supply line through the cell to ground. Due to
the magnetic tunnel effect, the electrical resistance of the cell changes due
to the orientation of the fields in the two plates. By measuring the resulting
current, the resistance inside any particular cell can be determined, and
from this the polarity of the writable plate. If the two plates have the same
polarity, it is typically considered meaning a 0, while if the two plates are of
opposite polarity denotes a 1. Since the read operation is non-destructive, it
involves the sensing of the cell and no write-back. Therefore, it only takes a
couple of nanoseconds, and makes STTMRAM a promising working memory.
Write Operation STT-MRAM writes data to the cells using spin-aligned
(polarized) electrons to directly torque the magnetic state. To rotate the
direction of the free layer and write data, certain level of current needs to be
applied to the STT-MRAM cell. If write current is higher than this critical
current, free layer will rotate, and write operation is completed. In practice,
the STT-MRAM write operation requires 2.6x more operating time than its
read operation, which is one of the critical points to be addressed while replacing DRAM. This writing process is what makes the current STTMRAM
cell so large for most part.

2.1.5

Disadvantages of MRAM

1. Power Efficiency - Writing in to MRAM requires substantial current. Changing data in magnetic fields requires a large power.
2. Size - Half select Problem: Induced field overlaps adjacent cells over a small
area.
3. Manufacturing - As chips get smaller individual circuits hold less charge. It
has been found experimentally that the resistance of the magnetic device
varies exponentially with the thickness.
4. Cost - It is comparatively higher than the other memories.

2.2

Magnetoelectric Random Access Memory (MeRAM)

Weve dreamed of creating a single, universal memory that could do everything well
and could therefore replace the many kinds of memory we have now. It must be
fast, to minimize the delays associated with reading and writing data, and it must
consume little power every time it is used. We should be able to manufacture it on
the same chip as a CPU, allowing us to put it close to the computational action,
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and be able to make it dense enough to compete with existing memories on cost. At
the same time, we would like it to be nonvolatileableto retain data without having
to continuously draw powerso it can be shut down when it isnt needed. One of the
most promising candidates is aform of magnetic memory called magnetoelectric
random access memory (MeRAM). With MeRAM technology, its possible to create
logic that is its own form of memoryaswitch that can both perform computations
and remember. This switch would retain its state even when its powered down.
Such nonvolatile logic may one day spur a full overhaul of the microprocessor,
allowing us to build chips that can very quickly shut off parts that arent being used
in order to save energy, freeze their state if they lose power, and remember exactly
what they were last doing the instant you turn them back on. In our lab were
fond of calling this new form of instant-on electronics Instantonics, and we think it
could dramatically enhance the speed and battery life of computers, tablets, and
smartphones. It could also provide a massive boost to some of the most memoryintensive computing tasks, such as video and multimedia signal processing, pattern
recognition, virtual reality, and machine learning.

Figure 2.4: MeRAM.

Both spin transfer torque MRAM (STT-MRAM) and magnetoelectric RAM
(MeRAM) can use the same basic architecture to store data in theorientation of
electron spin. Each bit in an array can be accessed at the intersection of two lines
of electrodesa source line and a bit line. Athird electrodethe word lineis used to
control voltage supplied to the bit. A single bit of information can be stored in
the free layer of each magnetic tunnel junction. In STT-MRAM, current flows
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directly through the junction in order to write the bit. MeRAM, which boasts a
thicker insulating layer, does not permit current to flow as readily and instead uses
voltage-associated effects to change the state of the bit. In each case, the magnetization of the free layer can be flipped [inset, right]. When the magnetization of the
free layer and that of the fixed layer (which serves as a reference) point in the same
direction, resistance is relatively low. It is higher when the two magnetizations
point in opposite directions. Note that a MeRAM transistor is much smaller than
an STT-MRAM transistor, since it does not have to provide as large a current. As
a result MeRAM cells are smaller overall, and arrays of them can be made more
dense.
STT-MRAM does not allow much room for improvement in energy efficiency. The
reason is a fundamentalone: Thedevice is essentially a wire. As current is driven
through it, energy is lost to heat. And as with a wire, the narrower the device
gets, the higher its resistance. Also, each memory cell in STT-MRAM needs a
transistor to drive the write current through the device. Because the transistor
needs to provide relatively large currents, it cant easily be shrunk. So although
STT-MRAM is picking up steam, its memory cells will have to stay fairly largeperhaps three to five times the size of DRAM cells.
It turns out, though, that many of the limitations of MRAM and STT-MRAM
can be avoided by designing a device that uses voltage instead of current to switch
magnetization. About 10 years ago, theoristsbegan exploringwhat would happen
if you tried to use a metallic magnetic material to make a very thin electric-fieldcontrolled structureabout a nanometer, orless than 10 atoms, thick. This thickness
is still greater than the distance an electric field can penetrate into a metal before
being largely scrambled. But its thin enough that small changes at the surface of
the material can have a big impact on the films overall properties, including the
natural inclination of the spins to align in a particular direction.
The magnetoelectric RAM, or MeRAM, is one of these thin-film spintronic memories. In many ways its similar to STT-MRAM. For one thing, it can be made
with the same cobalt-iron alloys. The main change is in the device structure and
engineering of its interfaces. The layer that acts as the bit is very thin. And
the insulating layer that in STT-MRAM would pass a current is made thicker, so
that very little current can flow. This change in structure essentially turns the
magnetic tunnel junction into a capacitiveinstead of a resistivedevice. When a
voltage is applied across this capacitor, the resulting electric field alters the magnetic properties of the devices free layer. This will change how strongly the bits
spin is locked into an up or down orientation. The spin direction will begin to
swing, and if the voltage pulse is cut off at the right time, the bits spin will end
up pointing 180degrees opposite its initial orientation. A small magnetic field or
current can also be used to nudge the spin into the desired final state.

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The benefits of this arrangement are impressive. Because MeRAM does not require a large current to switch, its transistor can be made much smaller than in
STT-MRAM, resulting in much denser arrays. Data can be written in less than a
nanosecond, using just a tenth of the energy needed to write to STT-MRAM. As
the devices get smaller and materials improve, we expect to be able to further cut
down on the energy by as much as a factor of 100. Taking full advantage of these
technologies will require a willingness to move beyond the strange and somewhat
inelegant mix of logic and memory weve relied on for decades. But once we get
over the shock of pushing aside the status quo, we will find we can accomplish
great things.
The ability to switch nanoscale magnets using voltages is an exciting and fastgrowing area of research in magnetism, Pedram Khalili, one of MeRAMs developers, said. This work presents new insights into questions such as how to control
the switching direction using voltage pulses, how to ensure that devices will work
without needing external magnetic fields, and how to integrate them into highdensity memory arrays. Once developed into a product, he added, MeRAMs
advantage over competing technologies will not be limited to its lower power dissipation, but equally importantly, it may allow for extremely dense MRAM. This
can open up new application areas where low cost and high capacity are the main
constraints.
Said Juan G. Alzate, another developer: The recent announcement of the first
commercial chips for STT-RAM also opens the door for MeRAM, since our devices
share a very similar set of materials and fabrication processes, maintaining compatibility with the current logic circuit technology of STT-RAM while alleviating
the constraints on power and density.

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Chapter 3
Applications and future scope of
MeRAM
1. MeRAM has great potential to be used in future memory chips for almost
all electronic applications, including smart-phones, tablets, computers and
microprocessors, as well as for data storage, like the solid-state disks used in
computers and large data centers.
2. Chips that can run at extraordinarily low power could be very useful in
devices that are physically difficult to access and therefore cant be easily
recharged. Examples include medical implant chips and sensors in hard-toreach places, such as at high elevations, in space, below ground, underwater,
or in environments otherwise dangerous to humans. With vast amounts of
low-power, on-chip memory, these devices could also be substantially better
at particular memory-intensive computing tasks, such as pattern recognition and machine learning. Defense and space applications will benefit from
instant-on systems, which will mean power failure, radiation, and other disruptions will be far less likely to result in a loss of critical information.
3. It will open up new application areas where low cost and high capacity are
the main constraints.

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Chapter 4
Comparitive Study

Figure 4.1: Comparision of MRAM with previous permissions.

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4.1

MRAM vs. MeRAM

1. MRAM today uses spin transfer torque (STT) technology, which depends
on the magnetic property of electrons referred to as spin in addition to
their charge. STT utilizes an electric current to move electrons to write data
into the memory. Yet while STT is superior in many respects to competing
memory technologies, its electric currentbased write mechanism still requires
a certain amount of power, which means that it generates heat when data
is written into it. MeRAM, replaces STTs electric current with voltage to
write data into the memory. This eliminates the need to move large numbers
of electrons through wires and instead uses voltage the difference in electrical
potential to switch the magnetic bits and write information into the memory.
This has resulted in computer memory that generates much less heat, making
it 10 to 1,000 times more energy-efficient.
2. MRAM does not have great data density, meaning that less information can
be stored on a chip of it. its memory capacity is limited by how close to each
other bits of data can be physically placed, a process which itself is limited
by the currents required to write information. MeRAM fixes this problem by
using a different method to write information to chips, which makes MeRAM
five times more efficient when it comes to data density.

Figure 4.2: A Schematic of MeRAM

3. The low bit capacity(density) of MRAM translates into a relatively large cost
per bit, limiting STTs range of applications. Since the MeRAM is more than
five-times as dense as MRAM, with more bits of information stored in the
same physical area, it also brings down the cost per bit.
When it comes to RAM, there are many types of RAM which have seen the
light of day - SRAM, DRAM, DDRAM. But as various as these types may
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seem, they all have at least one thing in common: volatility.almost all RAM
loses its memory as soon as it loses power. In fact, this is part of the reason
why hard drives exist RAM is not suitable for long term storage, because it
always has to be connected to a power source.

4.2

Advantages of MeRAM over other memories

1. MeRAM and its predecessor are exceptions to the principle of volatility.

MeRAM is actually a type of Non-Volatile RAM. This means that the
chips are capable of holding memory even while the system is powered down.
Thus, when a computer system with non-volatile memory experienced power
loss, unsaved data wouldnt necessarily disappear like it would in regular
computers. Using MeRAM, a computer could potentially boot back up into
its original state, all information left intact.
2. Also,it wont be difficult to get MeRAM on the market, since it is constructed similarly to MRAM. Therefore, manufacturers already producing
MRAM could potentially start creating the new standard without entirely
new facilities.

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Chapter 5
References
1. http://vr-zone.com/articles/researchers-claim-non-volatile-meram-is-better-andmore-power-efficient-than-current-memory/18441.html
2. http://study.com/academy/lesson/what-is-random-access-memory-ram-definitionhistory-quiz.html
3. http://dce.kar.nic.in/new
4. http://newsroom.ucla.edu/releases/ucla-engineers-have-developed-241538
5. Spintronics based Computing by Springer edited by Weisheng Zhao, Guillaume Prenat
6. http://courses.daiict.ac.in/pluginfile.php/5827/mod resource/content/0/presentation/pres N
7. http://www.ti.com/sitesearch/docs/universalsearch.tsp?searchTerm=mram
8. http://www.mram-info.com/introduction
9. http://www.nve.com/MRAM-video.php
10. http://physics.usask.ca/ chang/homepage/Spintronics/Spintronics.html
11. http://spectrum.ieee.org/semiconductors/memory/spin-memory-shows-its-might
12. http://www.cs.utah.edu/thememoryforum/jin.pdf
13. http://www.nve-spintronics.com/mram-operation.php

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