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Lab Experiments
Experiment-45
PHOTO TRANSISTOR
CHARACTERISTICS
Dr. Gabriel M. Rebeiz
EECS Department, 1301 Beal Ave, The University of Michigan, Ann Arbor, MI 48109-2122.
Email rebeiz@umich.edu
Abstract
In a silicon phototransistor GT116 VCE versus IC, light intensity versus IC variations are
studied using red, green, blue and white LED lights
Introduction
A phototransistor is a silicon semiconductor device with photosensitive base. It consists of
photodiode followed by a transistor as shown in Figutre-1. The photodiode supplies base current
to the transistor, and the transistor multiplies the base current by its gain. The device responds to
wide range of wavelength [1] varying from infrared to ultra violet. Phototransistor also responds
to fluorescent and incandescent lights. However, phototransistors respond better to LED light.
Hence LED light is used in this experiment. The output collector current is given by
IC = hFE IP
n
C
Schmatic
Symbol
TO-18
Package
Bottom View
Lab Experiments
19
has a peak at certain input energy or wavelength. The VCE versus IC curve is similar to BJT with
base current replaced by light energy. However, the curve is steeper with large output resistance.
Dark Current ID
When a phototransistor is placed in dark and voltage is applied across the collector emitter
terminal a small current of the order of few nano ampere flows. This current is called dark
current. This dark current is determined at VCE 5 to 20 volts. ID is of the order of 10 to 100nA and
it is due to the minority carriers.
Acceptance angle
This is a optical parameter speaks of focusing of light beam on to the photosensitive base area. It
is the solid angle made by the light beam at the sensitive area. The double convex lens of the
phototransistor converge the light beam to the sensitive area. Depending on the focal length of
the lens used as light window this vary from 10-20 degree. Typical value for the GT116
transistor is 12 degree. Smaller the acceptance angle better is the focusing.
Capture area
Surface area of the transparent window is called capture area. This area is about 12 mm2 for
GT116 phototransistor. Light falling on this area only has an effect on the photo current.
20
Lab Experiments
Luminosity (lumen/watt)
800
700
600
500
400
300
200
100
0
400
450
500
550
600
650
700
Wavelength (nm)
Color
Blue
Red
White
Table-1
Energy
Radiant
(nm)
K(Lumen/W)
(eV)
Flux e (W)
469
2.50
0.090
90
627
1.87
0.050
180
540
2.17
0.090
500
Optical parameters of the LEDs used in this experiment
Luminosity
v (lumen)
8.1
9.0
40.0
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21
Apparatus Used
The experimental setup consists of a digital dc milliammeter 0-200mA; digital dc voltmeter 020V, dc regulated power supply 0-7volts and a LED light arrangement.
The LED light arrangement is shown in Figure-3. It consists of connector rail with eight
connecting pins. These pins are male connectors. The female is fixed to the LED module as
shown in Figure-4. These modules are properly enclosed in a metallic enclosure and can be fitted
to male socket at eight positions. By fixing the module at different positions on the rail, distance
variation between the source and detector is achieved.
(a)
(b)
Figure-3 (a) and (b), Led light arrangements
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Lab Experiments
Experimental Procedure
The experiment consists two parts
Part A; Output characteristics of the phototransistor (VCE versus IC curve)
Part-B; Variation of collector current with luminous intensity.
Part A; Output characteristics of the phototransistor (VCE versus IC curve)
1. The circuit connections are made as shown in Figure-5.
10 Ohms
IC
0-7Volts
VCE
V
E
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Lab Experiments
Table-2
Collector Current (mA)
White
Blue
Red
0
0
0
0
0.2
5.2
9.8
2.1
0.4
8.2
14.4
3.5
0.6
9.1
15.3
4.1
0.8
10.0
16.5
4.5
1.0
11.0
17.3
4.7
1.5
12.8
19.1
4.9
2.0
14.6
21.1
4.9
3.0
17.4
24.5
5.1
4.0
19.7
27.3
5.2
5.0
21.1
29.8
5.3
6.0
22.0
32.0
5.3
7.0
22.8
33.7
5.4
Variation of collector current with different light energy
VCE (V)
2.17KeV-White
40
35
30
25
20
15
10
5
0
2.5KeV-Blue"
1.87KeV-Red
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Lab Experiments
12. A graph is drawn taking luminosity along X-axis and collector current along Y axis as shown
in Figure-7.
Table-3
Distance
Blue
White
(m)
IC (mA)
IC (mA)
v (K Lux)
v (K Lux)
0.032
7.9
20.6
39.0
10.4
0.057
2.5
5.2
12.3
1.2
0.082
1.2
5.6
5.9
1.3
0.107
0.7
3.3
3.5
0.5
0.132
0.46
2.4
2.3
0.3
0.157
0.32
1.1
1.6
0.1
Collector current variation with light intensity
Position
3
4
5
6
7
8
25
Lumen
8.1
Luminous intensity = ---------- = ----------- = 7900 = 7.9K Lux
d2
0.0322
20
15
10
5
0
0
10
12
10
8
6
4
2
0
0
10
20
30
40
50
(a)
(b)
Figure-7, Collector current variation with luminous intensity (a) with blue light (b) with
white light
Results
1. The output characteristics curve of GT116 silicon phototransistor is similar to bipolar
junction transistor with base current replaced by photon energy.
2. For the three LED lights blue, white and red the curves followed the same sequence 0f
VIBGYOR of decreasing energy.
3. The output curves have steeper slope in comparison with BJT curves. This is because of
the photodiode that actually detects the light inside the phototransistor.
4. The luminous intensity versus collector current curve is linear. This need not be the case
for higher intensity [4].
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Discussions
A phototransistor characteristic is found similar to BJT characteristics with main difference in the
output resistance (steep slope). The saturation voltage is also more than 0.3volts extends up to
0.55 volts. Phototransistors are made to use with Led light sources rather than incandescent
(bulb) or fluorescent (tube) light. There are varieties of applications of phototransistors, which
will be discussed, in future publications.
References
[1]
[2]
M G Craford LED challenge the incandescent IEEE Circuits and Devices, Sept 1992.
[3]
[4]
[5]
[6]
Note- CIE* - Commission Internationale de L clair, a French commission which has set this
standard since more than 100 years.