2.8M Scientifi C Cmos Board-Level Camera: Quantaurus-Qy New Ingaas Pin Photodiodes New MCP Assemblies

NEWS 02
2010
SYSTEM PRODUCTS
PAGE 29
2.8M Scientific CMOS

board-level camera
SOLID STATE PRODUCTS
PAGE 15
New InGaAs PIN photodiodes
ELECTRON TUBE PRODUCTS
New MCP assemblies
PAGE 27
SYSTEMS PRODUCTS
Quantaurus-QY
PAGE 30
Highlights
PAGE 07
InGaAs linear image sensors

G11608 series
15 New InGaAs PIN photodiodes 27 New MCP assemblies
SYSTEMS PRODUCTS
Wide spectral response range (0.5 to 1.7 m)

Low linearity error
G11608-256DA
Pixel pitch: 50 m, pixel height: 500 m
G11608-512DA
Pixel pitch: 25 m, pixel height: 500 m
High-speed readout: 5 MHz
Low cost
Cf selectable: 0.1 pF, 0.5 pF, 1 pF or 10 pF
30 Quantaurus-QY
Content
04
Company News
SYSTEMS PRODUCTS
07
16
PMT series H11451 to H11460
28
X-ray TDI camera
08
18
PMT series R7600U-300
29
2.8M Scientific CMOS board-level camera
10
IR-enhanced Si devices
19
PMT series R1288AH
30
Quantaurus-QY
12
IR-enhanced Si PIN photodiodes
20
PMT module series H11461
31
Nanoliter PIN tool FDSS7000 extension
13
IR-enhanced Si APDs
21
PMT module H11432
32
NanoZoomer 2.0 new fluorescence unit
14
IR-enhanced CCD image sensors
22
New high voltage power supply
15
23
New UV power meter
24
Compact xenon flash lamp modules
25
High power 5W XeF module
26
Large area UV curing system
27
New MCP assemblies
News 2010 Vol. 2
SERVICE
33
Fax reply
34
Exhibitions 2010/2011
35
Hamamatsu Photonics Europe
News 2010 Vol. 2
Company News
Hamamatsu Photonics Europe GmbH established

Hamamatsu, Japan 8th October 2010 Hamamatsu Photonics K.K. has
established Hamamatsu Photonics Europe GmbH as a 100% owned European
Headquarters at Herrsching, in the southwest of Munich, Germany. The
creation of European Headquarters is part of Hamamatsus aim to further
improve customer service and to respond quickly to market and customer
needs in Europe by improving operational efficiency at European subsidiaries.
Hamamatsu has 5 European sales subsidiaries in Germany, France, UK, Sweden
and Italy, handling more than 50 different countries and languages in Europe.
In Europe, the consolidated sales at the end of September 1999 were JPY
6.100 million, which represented 15% of total sales amount of
Hamamatsu Photonics. At the end of September 2009, the consolidated sales
increased to JPY 17.700 million, which was approximately 3 times higher than
the sales 10 years ago and represented 25% of total sales amount.
All of our European sales subsidiaries are fully committed to provide a high
level of local support in line with local business customers and needs. We
also anticipate further expansion of business and markets, and the newly
established European Headquarters will be responsible for achieving better
operational efficiency in its European operations and providing customers with
the highest level of customer service.
The key objectives of the European

Headquarters are to:
Improve communication between the Parent Company and
European subsidiaries, and among European subsidiaries
Develop a strategical approach to existing markets and
marketing activity to identify and develop new business
Improve technical and engineering support to customers in
areas such as demonstrations, installations, maintenance
and repair
Develop internal training and education for employees
Increase the efficiency of logistics in Europe
Develop and maintain internal control
Increase efficiency of financial control, preparation of
consolidated financial statements and cost savings
Provide a global response to international customers who
operate their business all over the world
Hamamatsu Photonics France celebrates its

25th Anniversary in 2010
Hamamatsu Photonics K.K. established Hamamatsu Photonics France (HPF)
in July 1985, with 3 staff, in the south of Paris, France. It was the second
European subsidiary fully owned by Hamamatsu Photonics K.K and was
established as part of Hamamatsus aim to provide locally based expert
technical and customer support for Hamamatsu Photonics products and
technology, and to create closer working relationships with customers.
Immediately after its establishment, HPF received its first order from a French
customer for a C1000-03 Computer Compatible Infrared Vidicon Camera, a
popular camera sold to the research and academic market at that time. Since
then HPF has expanded its business into many markets such as medical,
analytical, industrial, automotive and semiconductor, as well as advanced
research areas including high energy physics.
Today, HPF has its main office in Massy, France and three sales branch offices
in Switzerland, Belgium and Spain. It also has two representative offices in
Grenoble, France and Portugal. 60 staff are providing locallevel support in these countries.
Mr. Atsushi Tsujimura, Managing Director,
Hamamatsu Photonics France wishes to thank our customers
for their business and support over the last 25 years. He and
his staff at HPF will continue to provide the highest levels of
customer service for many years to come.
Hamamatsu Photonics supports the advancement of industry
and research, through discovery of new opportunities using
photonics technology. Building strong working relationships is
central to this philosophy and Hamamatsu Photonics aims to
create partnerships with our customers, enabling us to provide
the best possible service now and in the future.
Hamamatsu Photonics obtains factory site from SONY EMCS

Hamamatsu, Japan 29th July 2010 Hamamatsu Photonics K.K. has
concluded an agreement to obtain a factory site in Hamamatsu City from Sony
EMCS Corporation. The agreement is effective July 29, 2010. The new site is
part of Hamamatsus plan to expand its operations and will be used for mass
production assembly of opto-semiconductor products from the companys Solid
State Division.
Area of site: 39.146 square meters
Floor space: 21.072 square meters, 4 floors
Clean room space: 1.280 square meters
The factory is scheduled to be operational mid-2011.
News 2010 Vol. 2
The team of Hamamatsu Photonics France
News 2010 Vol. 2
PRELIMINARY InGaAs linear image sensors

G11608 series
Company News
Vehicle count hits 100 MOST car models
Short-wavelength enhanced type InGaAs

linear image sensor for spectroscopy
G11608-256DA, G11608-512DA
MOST technology's path of success is climbing steeply
The G11608 series consist of a CMOS readout integrated circuit and an

InGaAs photodiode array with enhanced sensitivity at short wavelength, which
are connected by wire bonding and hermetically sealed in a room temperature
package.
The MOST Cooperation is pleased to announce the latest achievements of

MOST Technology, with fast-growing acceptance of this de-facto automotive
network standard by key carmakers worldwide. The number of vehicle
models relying on the MOST infotainment backbone has now hit the one
hundred mark, with a total of 100 vehicle models on the road today. This fast
implementation growth rate reflects the practical suitability and reliability of
MOST.
L11354-01 (left), S11355-01 (middle), P11379 (right)
Features
Wide spectral response range: 0.5 to 1.7 m
Low linearity error
High-speed data rate: 5 MHz max.
Selectable Cf: 0.1 pF/ 0.5 pF/ 1 pF/ 10 pF
Low cost
MOST goes hybrid and electrical

The vehicle models that have implemented MOST include more than 10
hybrid vehicles. The plastic optical fibre (POF) chosen ten years ago suits the
requirements given by hybrid and electrical power trains at best due to the
weight and its physical properties. MOST Technology constitutes the modern
platform for energy-saving infotainment systems.
G11608 series
Spectral response
(Typ. Ta=25 deg.C.)
1.2
1.0
Photo sensitivity (A/W)
Now, various car makers have already started projects implementing the
latest MOST Technology MOST150 based on plastic optical fibre (POF).
POF significantly reduces the weight of the wiring harness. Another issue
is electromagnetic compatibility (EMC): because of its physical properties,
an optical transmission does not interfere with any electromagnetic fields
neither regarding emission or immunity. With respect to environmental
sustainability and electric mobility, POF technology is state of the art.
Compared to Hamamatsu' conventional InGaAs linear image sensors, the

G11608 series offer a high data rate of 5 MHz (enhanced from 500 kHz)
and improved linearity error. The G11608 series also has a spectral range
extending to the shorter wavelength side, which covers from 0.5 to 1.7 m.
Light detection over a wide spectral range is therefore possible with a single
detector. Since the room temperature package does not contain a cooling
element, the G11608 series is available in compact size and low cost.
G11608 series
0.8
0.6
0.4
Conventional type
G9204-512D
0.2
0
0.4
MOST network
0.6
News 2010 Vol. 2
1.0
1.2
1.4
1.6
1.8
Wavelength (m)
MOST150 is on the road to implementation

Following the implementation of the first generations MOST25 and
MOST50, now the newest specification Rev. 3.0 for MOST150 is on its way
to production. Audi and Daimler will be the first carmakers to integrate
MOST150 into series production vehicles. MOST150 enables the use of a
higher bandwidth of 150 Mbps, an isochronous transport mechanism to
support extensive video applications, and an embedded ethernet channel
for efficient transport of IP-based packet data. It provides significant speed
enhancements and breakthroughs while keeping costs down. With the first car
makers committing to the MOST150 network in selected vehicles from 2012
on, the suppliers of MOST devices, tools, and software solutions are focusing
on optimizing their MOST150 product portfolio to ease the implementation in
upcoming car models.
0.8
The MOST architecture simplifies moving between speed

grades by keeping the application programming interfaces
constant while allowing the physical interfaces to evolve as
needed.
Line-up
Application
Spectroscopy
Type No.
Pixel size [(H) x (V)]
Number of pixels
G11608-256DA
50 x 500 m
256 pixels
G11608-512DA
25 x 500 m
512 pixels
Data rate (max.)

5 MHz
For more information see

http://www.mostcooperation.com
News 2010 Vol. 2
InGaAs linear image sensors PRELIMINARY

G11620, G11135 series
Back-illuminated type InGaAs linear image sensors
The G11620 series and G11135 series are back-illuminated type InGaAs
linear image sensors. These linear image sensors consist of an InGaAs
photodiode array and a CMOS chip that contains a charge amplifier array, an
offset compensation circuit, a shift register, and a timing generator. The InGaAs
photodiode array and the CMOS chip are electrically connected by indium
bumps. The newly adapted CMOS readout circuit (ROIC) is optimized for each
application by our own design and wafer-process technologies.
Hamamatsu introduces the new G11620 and G11135 series of linear

InGaAs image sensors.
They consist of InGaAs photodiode array CMOS chip that contains a charge
amplifier array, an offset compensation circuit, shift register and timing
generator. This allows for simple installation and operation of the device.
The G11135 series is available in two pixel sizes; the G11135-256D has
256 pixels with 50 x 50 m, and the G11135-512DE offers 512 pixels with
25 x 25 m.
Block diagram
CMOS chip
Shift
registor
G11620, G11135
.....
CLK
RESET
Spectral response
Applications
Foreign object screening G11135 series
Agricultural product inspection G11135 series
Near infrared spectroscopy G11620 series
Author: Robin Smith, Hamamatsu Photonics UK
AD_sp
AD_trig
Back-illuminated type
G11620/G11135 series
0.6
KMIRC0048EA
0.4
Cross sectional image
Flip chip packaging technology
0.2
0
0.8
Timing circuit
Shift
register
0.8
1.0
1.2
1.4
Wavelength (m)
1.6
1.8
Back-illuminated type InGaAs linear image sensors adapt flip chip packaging
by connecting an InGaAs photodiode array and a CMOS readout integrated
circuit (ROIC) via indium bump on a hybrid structure.
InGaAs photodiode array

CMOS chip
Window
Bump
Wire bonding
They also realize single video line by integrating the conventional dual row
CMOS circuits into one chip. These make the back-illuminated type InGaAs
linear image sensors more compact, less expensive and highly-performance
than conventional InGaAs image sensors.
KMIRC0053EA
Line-up
Application
Sorting
News 2010 Vol. 2
.....
InGaAs
chip
Front-illuminated type
Spectroscopy
CMOS readout circuit
VIDEO
.....
Features
Single video line (256/512 pixels)
Superior linearity
High-speed data rate: 5 MHz max.
Selectable Cf: 0.1 pF/0.5 pF/1 pF/10 pF (G11620 series)
Selectable Cf: 0.1 pF/1 pF (G11135 series)
Built-in temperature sensor
Spectral response: 0.95 to 1.7 m
Low cost
(Typ. Ta=25 deg.C.)
1.2
1.0
These new series utilise back thinned InGaAs allowing for detection over a
wide spectral range and very low dark current.
.....
.....
The G11620 series feature two pixel sizes; the -256 DA offers 256 pixels with
50 x 500 m and the -512 DA offers 512 pixels with 25 x 500 m. This larger
pixel size in comparison to the G11135 series allows this device to be used in
spectroscopy applications.
Charge
amplifier
(Typ. Ta=25 deg.C.)

Type No.
Pixel size [(H) x (V)]
Number of pixels
G11620-256DA
50 x 500 m
256 pixels
G11620-512DA
25 x 500 m
512 pixels
G11135-256DD
50 x 50 m
256 pixels
G11135-512DE
25 x 25 m
512 pixels
Data rate (max.)
Number of video line
CMOS readout
integrated circuit
5 MHz
For spectroscopy
5 MHz
For sorting
News 2010 Vol. 2
IR-enhanced Si devices
Next-generation Si devices with enhanced near IR

sensitivity, using a MEMS structure
Spectral response (IR-enhanced Si APD)
Spectral response (IR-enhanced CCD image sensor)
(Typ. Ta=25 deg.C., M=100)
70
60
IR-enhanced Si line-up
40
IR-enhanced
Si APD
(S11519 series)
20
IR-enhanced
CCD image sensor
90
50
30
(Typ. Ta=25 deg.C.)
100
IR-enhanced
Si APD
(S11518 series)
Quantum efficiency (%)
Introducing the next-generation of ultra high sensitivity semiconductor sensors

that exceed the performance of existing Si photodiodes, Si APDs, and CCD
image sensors. These sensors have MEMS (Micro-Electro-Mechanical-Systems)
structures fabricated using our own unique laser processing technology and
achieve very high sensitivity in the near infrared region. They are the ideal
solution for a wide variety of applications such as optical communications,
thermal measurement and fluorescence photometry.
Conventional products
S8890 series
80
70
60
Conventional type
50
40
30
20
10
Front-illuminated CCD
10
0
400
600
800
1000
0
200
1200
400
(Typ. Ta=25 deg.C)
Line-up
Sensitivity
increased
Quantum efficiency=100%
IR-enhanced
Si PIN
photodiode
Large
active area
0.2 mm
TO-18
S11498-01
S9055-01
0.1 mm
TO-18
Active area size
Package
S11499
3 mm
TO-5
S11499-01
S3759
5 mm
TO-8
S11518-10
S8890-10
1 mm
TO-5
S11518-30
S8890-30
3 mm
TO-8
APD
S11519-10
S8890-10
1 mm
TO-5
TO-8
Low voltage
IR-enhanced
CCD image sensor
0.2
0
200
High speed
High sensitivity
0.4
S11498
Conventional
products
S9055
Type No.
IR-enhanced
0.6
1000
1200
(Typ. Ta=25 deg.C., unless otherwise noted)
Product
0.8
800
Wavelength (nm)
Wavelength (nm)
Spectral response (IR-enhanced Si PIN photodiode)
600
S11519-30
S8890-30
3 mm
S11500-1007
S7030-1007
24 x 24 m/1024 x 128 ch
S11510-1006
S10420-1006
14 x 14 m/1024 x 64 ch
S11510-1106
S10420-1106
14 x 14 m/2048 x 64 ch
Ceramic
Non-cooled
Application
Page No.
Optical fibre communications
P.12
YAG laser monitor
P.12
YAG laser monitor
P.13
Raman spectrometers
P.14
Conventional type
IR-enhanced
Si PIN photodiode
(S11499 series)
400
600
800
1000
1200
Wavelength (nm)
10
News 2010 Vol. 2
News 2010 Vol. 2
11

S11498 series, S11499 series
IR-enhanced Si APDs
S11518 series, S11519 series
IR-enhanced Si APD
The S11498 series and S11499 series are a family of Si PIN photodiodes which
use Hamamatsu's new MEMS structure to offer a drastic improvement in
sensitivity in the near infrared region at longer wavelengths.
The S11518 series and S11519 series are a family of Si APDs which use
Hamamatsu's new MEMS technology to offer 40% quantum efficiency at
1.06 m.
Si PIN Photodiodes S11498 series

Features
High sensitivity: 0.4 A/W (850 nm)
High speed
1.5 GHz (S11498)
2.0 GHz (S11498-01)
Low capacitance
The S11518 series can replace the S8890 series whilst offering almost double
the quantum efficiency at 1.06 m, making this series ideal for YAG laser
monitoring.
The S11519 series is designed for operation at low bias and offers excellent
characteristics and stable operation at just 350 V.
S11498/S11498-01 (left), S11499/S11499-01 (right)
Spectral response
Applications
Optical fibre communications
High speed measurement
(Typ. Ta=25 deg.C.)
0.8
S11498 series
Features
High sensitivity in the near infrared region
High gain
S11519 series: stable operation at low bias
S11518-10/S11518-30 (left), S11519-10/S11519-30 (right)
Spectral response
Applications
YAG laser monitor
Quantum
efficiency=100%
0.4

0.2
Conventional type
0.6
S11518 series
60
S11499 series
Si PIN Photodiodes S11499 series

Features
High sensitivity: 0.6 A/W (1060 nm)
Large active area
3.0 mm (S11499)
5.0 mm (S11499-01)
(Typ. Ta=25 deg.C., M=100)
70
50
40
30
S11519 series
20
Conventional products
S8890 series
10
Applications
YAG laser monitor
0
200
400
600
800
Wavelength (nm)
1000
1200
0
400
600
800
1000
1200
Wavelength (nm)
12
News 2010 Vol. 2
News 2010 Vol. 2
13

S11500-1007, S11510 series

G11193 series
Small surface mount package PIN diodes
The S11500-1007 and S11510 series are FFT (Full Frame Transfer) CCD image
sensors which feature improved sensitivity in the near infrared region and a
quantum efficiency of 40% at 1000 nm through the use of a MEMS structure
on the back side of the CCD.
The new G11193 series of InGaAs PIN photodiodes feature a small, compact
SMD (Surface Mount Device) package, measuring just 5 mm x 4 mm. Two
types are available, with differing active areas of 0.2 mm and 0.3 mm diameter
respectively.
Although these are area image sensors they can also be used as linear sensors
through the implementation of binning, making these products ideal for
spectroscopy applications.
The G11193 series feature low noise and low dark current characteristics and
are ideal for optical power meter and general IR measurement applications.
G11193 series
General ratings
(Typ. Ta=25 deg.C.)
Parameter
(Typ. Ta=25 deg.C.)
100
S11500-1007
S11510 series
90
80
70
60
G11193-02R
Package
G11193-03R
Active area
0.2
Window
0.3
Resin
30
20
0
200
1.2
Front-illuminated CCD
10
400
600
800
1000
(Typ. Ta=25 deg.C.)
1200
1.0
0.8
0.6
0.4
0.2
0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Wavelength (m)
(Typ. Ta=25 deg.C.)
1.5
0.5
-0.5
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (m)
KIRDB0409EA
KIRDB0445EA
News 2010 Vol. 2
mm
Photo sensitivity temperature characteristic
Spectral response
40
Wavelength (nm)
14
Unit
SMD
Author: Richard Harvey, Hamamatsu Photonics UK
Conventional type
50
Applications
Optical power meter
General measurement
Analytical instrumentation
Temperature coefficient (%/deg.C.)
Spectral response
CCD image sensors S11510 series

Features
Pixel size: 14 x 14 m
High CCD node sensitivity: 6.5 V/eWide spectral response range
Wide dynamic range
Features
0.9 m - 1.7 m spectral response range
Small SMD package
Low dark current
S11500-1007 (left), S11510-1006 (middle), S11510-1007 (right)
Quantum efficiency (%)
CCD area image sensor S11500-1007

Features
Pixel size: 24 x 24 m
Line, pixel binning
Wide spectral response range
Low readout noise
Wide dynamic range
News 2010 Vol. 2
15
PMT series
H11451 to H11460
Linear array multianode PMT series
Spectral response
Parameter
Hamamatsu has developed new products expanding their existing range of

linear PMT modules.
The H11453 is the new part number for the H9530, with the eight channel
reflection transfer type filter block. The H11455 also features built-in preamplifier and high voltage power supply. The H11457 has built-in gain control
functionality.
The H11459 is the new designation of the H10515B with divider circuit, preamplifier and high voltage power supply. Similarly the H11460 is the H7260
with these added electronics.
100
CATHODE RADIANT SENSITIVITY (mA/W)

QUANTUM EFFICIENCY (%)
The H11451 expands the popular H9530 series with the addition of built-in
pre-amplifier and high voltage power supply. The H11452 additionally features
built-in gain control functionality.
Specifications H11452 (H11451 with gain control function)
Adjustment step
QUANTUM
EFFICIENCY
CATHODE
RADIANT
SENSITIVITY
10
Amplifier bandwidth @ -3 dB
Dimensions (W x H x D)
Weight
16
0.01
100
200
300
400
500
600
700
800
900 1000
Value
Unit
Supply voltage range
11.5 to 15.5
Recommended control
voltage range (max.)
+ 3.6
Effective area
0.8 x 16
mm/ch
Channel pitch
mm
DC to 1
MHz (min)
72.0 x 44.9 x 85.3
mm
Approx. 154
CATHODE RADIANT SENSITIVITY (mA/W)

QUANTUM EFFICIENCY (%)
H11459
-01 TYPE
Specifications H11460 (32ch linear multianode PMT module)
-20 TYPE
Parameter
-04 TYPE
10
CATHODE
RADIANT
SENSITIVITY
1
Unit
V
+ 4.8
2.0 x 2.5
mm/ch
2.8
mm
DC to 1
MHz (min)
65 x 29.2 x 75
mm
g
Unit
11.5 to 15.5
Recommended control
+ 3.6
Effective area
0.8 x 7
mm/ch
Channel pitch
mm
DC to 1
MHz (min)
72.0 x 40.5 x 84.0
mm
Approx. 154
QUANTUM
EFFICIENCY
Weight
H11460
0.1
Example of gain control

Flat
0.01
100
200
300
400
500
600
700
WAVELENGTH (nm)
800
900 1000
80
60
40
20
10
0
Ex. 1
100
100
100
Value
Value
Original
11.5 to 15.5
Approx. 100
News 2010 Vol. 2
mm
Approx. 130
CHANNEL
OUTPUT DEVIATION (%)
Channel pitch
65 x 40.8 x 75
Parameter
0.1
Effective area
mm/ch
Specifications H11459 (16ch linear multianode PMT module)
Recommended control
2.0 x 2.5
-03 TYPE
Specifications H11451 (H9530 with divider circuit and pre-amplifier)

Parameter
+11.5 to +15.5
-00 TYPE
100
Step/ch
H11453/H11454
Spectral response
H11451
/ch
100
Effective area
Weight
Unit
1 to 0.01
Input voltage
Weight
WAVELENGTH (nm)
Applications
Biomedical fluorescence detection
Laser scanning microscopy
Environmental monitoring
Value
Range of gain adjustment
80
60
40
20
10
0
CHANNEL
10
CHANNEL
News 2010 Vol. 2
17
PMT series
R7600U-300
PMT series
R1288AH
Extended green photocathode PMT series
Ruggedized, high temperature,

1 inch diameter PMT series
Hamamatsu are pleased to introduce the R7600U-300 and R7600U-300-M4

photomultiplier tubes (PMTs).
Hamamatsu extends the R1288AH PMT series, one inch diameter, high
temperature PMTs.
The PMTs use a newly developed photocathode which offers high response in
the green region, ideal for scintillation counting. The photocathode has a range
from 300-650 nm with peak response at 420 nm.
The R1288AH features flying lead output for easy assembly in to final
products. The R1288AH-07 features built-in voltage divider circuitry for simple
operation housed in a magnetic shield case. The R1288AH-27 features the
same circuitry but built-into stainless steel housing. The R1288AH-31 has the
same features as the -27 but with additional screening tests performed.
R7600U-300 (left), R7600U-300-M4 (right)
Spectral response
These new photomultiplier tubes are fully supported through dedicated

peripheral devices.
50
Bialkali Typ.
SBA (-100) Typ.
UBA (-200) Typ.
QUANTUM EFFICIENCY [ % ]
Applications
Radiation detection
Low light level measurements
Specifications
Parameter
Spectral response range
Wavelength of maximum response
Window material
Description
Unit
300 to 650
nm
420
nm
Borosilicate glass
Material
Bialkali
Minimum effective area
18 x 18
mm
Metal channel dynode
10
Weight
Approx. 30
Operating ambient temperature
-30 to +50
deg.C.
Storage temperature
-30 to +50
deg.C.
Photocathode
Dynode
Structure
Number of stages
Parameter
Material
Photocathode
Minimum
effective area
Window material
Extended Green (-300) Typ.
40
Specifications R1288AH
Wavelength of maximum
response
Features
High temperature operation -200 degrees celsius
1 inch diameter
Ruggedized
( 1-inch Metal Package PMT Series )
Features
High green response
Multianode output
High gain
R1288AH-27, -31
Spectral response
Spectral Response Characteristics
Structure
Applications
Radiation detection
Oil well logging
Environmental research
30
Dynode
Number of
stages
Base configuration
Description
Unit
300 to 650
nm
375
nm
High temp bialkali
22
mm dia.
Borosilicate glass
Circular and liner-focused
10
15 pin flying lead

temporary base

20
Typical fatigue charcteristics with continuous operation
Specifications R1288AH-07/R1288AH-27/R1288AH-31
Parameter
R1288AH Relative Pulse Height vs. Operating Time Test

Temperature : 200 deg.C.
Spectral response
Wavelength of maximum
response
150%
10
0
200
300
400
500
600
WAVELENGTH [ nm ]
700
800
Relative Pulse Height[%]
The R7600U-300 has a minimum effective area of 18 x 18 mm and with ten

dynode stages, offers a high gain of 2 x 106. The R7600U-300-M4 utilises a
2 x 2 multianode structure to offer four outputs, allowing for basic positioning
information.
The R1288AH/-07/-27/-31 use a newly developed photocathode which offers

200 degrees celsius operation, 10 stage dynode structure for high gain and a
minimum of 22 mm diameter effective area.
R1288AH- 27
Material
Photocathode
100%
Minimum
effective area
Window material
R1288A- 14
Structure
50%
Dynode
Light Source : Blue LED ( Simulated NaI(Tl) + 137Cs )

Light was led to temperature oven with optical fiber.
Count rate : 1 ks-1
Supply Voltage : +1500V
Number of
stages
Description
Unit
300 to 650
nm
375
nm
High temp bialkali
22
mm dia.
Borosilicate glass
Circular and liner-focused
10
0%
1
10
100
1000
Operation Time [hours]
18
News 2010 Vol. 2
News 2010 Vol. 2
19
PMT module series

H11461
PMT module
H11432
Large area, side-on, low voltage

operation PMT modules
Large area, low voltage operation PMT module

Hamamatsu introduces a new PMT module, the H11432, to complement their
existing range of PMT modules.
Hamamatsu introduces a new series of PMT modules, the H11461, to

complement their existing range of PMT modules.
It features a 34 mm diameter effective area, ideal for coupling to scintillators

for the detection of radiation. In addition to a larger active area, the H11432s
peak sensitivity wavelength is 420 nm, common to most spectra.
The H11461 range consists of six different options, two options for photon
counting at varying wavelength ranges, a specialised high UV sensitivity
photocathode and three standard photocathodes for coverage of a range of
spectrums.
Dimensional outlines (unit: mm)
38.0
27.0
EFFECTIVE AREA
(4x20)
+0.5
-0.5
+0.5
-0.5
+0.5
50.0 -0.5
MAX. 10
+0.5
10.0 -0.5
+0.5
-0.5
R3
4-M3 DEPTH 10
+0.5
+0.5
:A WG26 (RED)
:A WG26 (BLACK)
:A WG26 (BLUE)
:A WG26 (WHITE)
:RG-174/U
VOLTAGE PROGRAMMING
SIGNAL OUTPUT
LOW VOLTAGE INPUT (RED)
GND (BLACK)
Vref OUTPUT (BLUE)
Vcont INPUT (WHITE)
Electrically insulate the

reference voltage output.
Adjust the control voltage to
adjust the sensitivity.
20
News 2010 Vol. 2
POWER SUPPLY
+5 V
GND
+0.5 V to
+1.1 V
GND
PHOTOSENSOR MODULE
+5 V
GND
MONITOR
Unit
+4.5 to +5.5
V
V
mA
Max.control voltage
+1.5 (input
impedance 1 M)
+0.5 to +1.45
Applications
Radiation detection
Settling time*2
Typ.
10
ms
Ripple noise (peak to peak)*7*8
Max.
0.6
mV
Operating ambient temperature*3
+5 to +50
deg.C.
Storage temperature*3
-20 to +50
deg.C.
Recommended control voltage

adjustment range
*1: Input
Specifications of PMT
(Typ.Ta=25 deg.C.)
Ratings
Unit
Max.output signal current
100
uA
Effective area
34
mm dia.
Sensitivity adjustment range
1:102
Peak sensitivity wavelength
420
nm
Min.
70
Typ.
95
Blue sensitivity index (CS 5-58)
Typ.
11
Red/white ratio
Typ.
Radiant sensitivity*4
Typ.
88
mA/W
Luminous sensitivity
Cathode
Luminous sensitivity*5
Anode
Radiant sensitivity*4*5
Dark current*5*6
POTENTIOMETER (100 k)
When using a potentiometer to adjust sensitivity, monitor
the control voltage so it does not execeed +1.2 V
Ratings
Input voltage
5.0
POWER SUPPLY
SIGNAL OUTPUT
LOW VOLTAGE INPUT (RED)
GND (BLACK)
Vref OUTPUT (BLUE)
Vcont INPUT (WHITE)
Parameter
Max.input current*1
CW
PHOTOSENSOR MODULE
RESISTANCE PROGRAMMING
(Typ.Ta=25 deg.C.)
Features
5 V operation
34 mm diameter effective area
Simple operation
Parameter
Sensitivity adjustment method
Specifications of modules
+6.0
2X2-M3 DEPTH 10
LOW VOLTAGE INPUT (+5 V)
GND
Vref OUTPUT (+1.2 V)
Vcont INPUT (+0.5 V to +1.1 V)
SIGNAL OUTPUT
450 +- 20
C1
H11432
Max.input voltage
+1
57 -1
+0.5
-0.5
95.0 -0.5
+0.5
8.0
55.0 -0.5
Applications
UV detection
Academic research
Low light level measurements
85.0 -0.5
24.0 -0
87.0 -0.5
+0.5
+0.5
19.0
The module also features -metal and HA coating to reduce environmental

effect and built-in high voltage conversion for reliability.
+0.5
Features
5 V operation
4 x 20 mm effective area
Simple operation
H11461
5.0 -0.5
The series feature simple 5 V operation, with gain controlled via either voltage
or resistance programming. All the options have 4 x 20 mm active area
allowing for easy replacement of existing side-on modules from Hamamatsu.
The H11432 requires a 5 V power supply, with gain controlled via either
voltage or resistance programming, allowing a sensitivity adjustment range
of 1:102.
Min.
Typ.
47.5
Typ.
4.4 x 104
Typ.
10
Max.
100
voltage = +5.0 V, control voltage = +1.3 V, output current = dark current.

*2: The time required for the output to reach a stable level following a change in
the control voltage from +1.0 V to +0.5 V.
*3: No condensation.
*7: Control voltage = +1.3 V.
*8: Cable RG-174/U, cable length 450 mm, load resistance = 1 Mohm,
load capacitance = 22 pF.
A/lm
-
A/lm
A/W
nA
*4: Measured
at the peak sensitivity wavelength.

voltage =+1.3 V.
*6: After 30 minutes storage in darkness.
*5: Control
News 2010 Vol. 2
21
New high voltage power supply

C9727
New UV power meter

C9536-02, H9958-02
Compact high voltage DC power supply
UV power meter for UV-LED monitoring
The C9727 series is a bench-top type multi-purpose power supply incorporating

a high voltage power supply with a maximum output of +/-3500 V for a
photomultiplier tube and constant low voltage power supplies of 5 V and
15 V for peripheral devices such as Hamamatsu amplifier units and photon
counting units.
The C9536-02/H9958-02 is an optical power meter especially designed to

measure absolute optical power of UV-LED light from 0.1 mW/cm2 up to
10 W/cm2.
The meter has a flat spectral response over a wide UV wavelength region,
and is capable of measuring the optical power independent of the spectral
emission distribution of a light source.
The four digit digital voltmeter on the front panel displays the high voltage
output value with high accuracy.
Features
Compact bench-top type
Multiple outputs of 5 V, 15 V and high voltage +/-3500 V
High stability
USB control
Unlike commonly available UV power meters, optical power of various UV light

sources can be easily measured with just one set of the C9536-02/H9958-02,
without having to correct for each wavelength of emitted light or swap detector
heads.
C9727
Applications
UV-LED monitoring
General UV metering
Specifications
C9727-50/C9727-51
0 V to +3500 V (variable)
C9727/C9727-01
-320 V to -3500 V (variable)
C9727-50/C9727-51
+320 V to +3500 V (variable)

2 mA
C9727/C9727-50
AC input voltage
Max.
0.03 %
1 %
0.5 %
Ripple/noise (p-p)*3
Max.
0.003 %
0.06 %
0.02 %
Max.
0.05 %/h
0.05 %/h
0.05 %/h
Temperature coefficient
Max.
0.01 %/deg.C.
0.01 %/deg.C.
0.005 %/deg.C.
High voltage output monitoring accuracy
Max.
(0.1 % +2 V)
Storage temperature/humidity range*5

Weight
News 2010 Vol. 2
Value
Unit
mm
0.0001 ~ 10
W/cm2
0 to +60
deg.C.
55 (W) x 75 (D) x 18 (H)
mm
Approx. 195
Spectral response
365 385
TPT B0040EA
100
HAMAMATSU
DIN type (6 pins)

UV POWER METER
110
0 deg.C. to +40 deg.C., 85 % RH max.
SELECT
ENTER
START
STOP
POWER
-20 deg.C. to +50 deg.C., 90 % RH max.
H9958-02
80
UV LED
UV LED
60
40
20
75
*1: For
22
mm
Approx. 285
1
Effective Diameter 1 mm
Approx. 3.0 kg
Analog
Output connector
20
10 % change in line voltage.

*2: For 0 % to 100 % change in load.
*3: At the maximum output.
*4: After 30 minute warm-up.
75 (W) x 110 (D) x 20 (H)
Dimensions
Approx. 50 V A
Operating ambient temperature/humidity range*5
deg.C.
Weight
0.1 %
Drift*4
SHV type
0 to +40
75
Cable lengthm2 m
2
Load regulation*2
Power consumption*3
RS-232C
Effective diamater
230 V/(10 %) (50 Hz/60 Hz)
Max.
Output connector receptacle
External interface
Parameter
200 mA
0.1 %
Specifications H9958-02
26
Input regulation*1
0.005 %
Internal battery or
AC adaptor
Measurement range
100 V/120 V/(10 %) (50 Hz/60 Hz)
C9727-01/C9727-51
Power requirement
Weight
15 V 5 % (fixed)
500 mA
Dimensions
Dimensional outlines (unit: mm)

5 V 5 % (fixed)
Measurement mode
55
Maximum output current
15 V power supply section
18
Specification guaranteed
Output voltage
5 V power supply section
Unit
Continuous/peak/
integration
RELATIVE VALUE (%)
C9727/C9727-01
High voltage power

supply section
0 V to -3500 V (variable)
Description/value
15
Output voltage
Specifications C9536-02
Parameter
Features
Flat spectral response over a wide region
Wide measurement range from 0.0001-10 W/cm2
Applications
PMT power supply
Parameter
C9536-02
RS232C
RS232C
RS-232C connector
ANALOG OUT
DC IN
DC Inlet
0
200
250
300
350
400
450
500
WAVELENGTH (nm)
News 2010 Vol. 2
23
Compact xenon flash lamp modules

L9455-2X, L9456-2X
High power 5W XeF module

L11316-0X, L11317-0X
5 W xenon flash lamp modules with silent operation

and high output
Electrical specifications L11316-0X

Parameter
Average input power*1
Hamamatsu introduces two new ranges of 5 W xenon flash lamp modules.

The very popular L9455 and L9456 series have been enhanced, and now offer
silent operation. Standard modules release an audible sound every flash, so
this new improvement will be of real benefit to some end users.
Two high output power types are also introduced, the L11316 and L11317
series. Traditional 5 W modules have a maximum energy per flash of
39.6 mJ. The L11316 and L11317 are capable of 100 mJ per flash, whilst still
maintaining excellent stability and lifetime characteristics.
Features
Silent operation (new improved L9455/L9456 series)
High energy per flash (L11316 and L11317 series)
Continuous line spectra from UV to IR
Compact modular package
Max average input energy*2

Light output stability*3
Guaranteed life*4
Description/Value
L9455-2X
Arc length
Spectral distribution
Window material
Audible noise
Applications
Fluorescence spectrophotometer
Environmental measurements
Microtiter plate reader
Blood analysis
Semiconductor inspection
Net weight
1.5 mm 0.2 mm
185 nm to 2000 nm
UV glass
Approx. 1/10*6
Approx. 150 g
Operating temperature
0 deg.C. to +40 deg.C.
Conformance standard
EN61326-1
1.0 % CV typ.
5.0 108 flashes
0.2 F/0.1 F
Internal: 650 V to 1000 V
External: 500 V to 1000 V*6
21.6 V to 26.4 V
Input current (rush current)
0.75 A (3 A)
Trigger mode
External only
Input trigger voltage
Part number
100 mJ
3.0 % CV max.
Internal/external
Repetition rate
Parameter
5 W max.
Main discharge capacitance*5
Input voltage
General specifications L9455-2X
Description/value
Main discharge voltage mode

Main discharge voltage
adjustable range
L9455-2X/L9456-2X
(Ambient temperature typ.Ta=25 deg.C.)
Input trigger impedance

*1: Maximum
400 Hz max.*2
5 V to 10 V (pulse width: 10 sec or more)*7
330
average input (continuous) W is given by: W = E f [W], where Ew is the maximum input
energy (J) and f is the repetition frequency (Hz).
*2: Maximum average input energy (per flash) E is given by: E = 1/2CV2 [J], where V is the main
discharge voltage (V) and C is the main discharge capacitance (F).
*3: Calculated by: standard deviation/average light output 100 [%].
*4: At 5-watt operation.
*5: Adjusted at factory prior to shipment.
*6: External voltage supply of 2.44 V to 4.88 V (205 Vout/ Vin).
*7: Flash pulse is synchronized with rising edge or rectangular wave.
High power XeF module
General specifications L11316-0X

Parameter
Description/value
Part number
L11316-01/L11316-02
Arc length
Spectral distribution
1.5 mm 0.2 mm
185 nm to 2000 nm
Window material
Net weight
UV glass
Approx. 560 g
Operating temperature
0 deg.C. to +40 deg.C.
Conformance standard
EN61326-1
Electrical specifications L9455-2X
(Ambient temperature typ.Ta=25 deg.C.)
Parameter
Description/value
5 W max.
Average input power*1
2.0 % CV max.
Light output stability*3
0.5 % CV typ.
1.0 109 flashes
Guaranteed life*4
Main discharge capacitance*5
0.22 F/0.11 F/0.047 F/0.28F
Main discharge voltage mode
Internal/external
Main discharge voltage

adjustable range
400 V to 600 V*7
Input voltage
11 V to 28 V
Input current (rush current)
1 A (4 A)
Trigger mode
External only
Repetition rate
Input trigger voltage
530 Hz max.*2
5 V to 10 V (pulse width: 10 sec or more)*8
Input trigger impedance
24
330
News 2010 Vol. 2
*1: Maximum
average input (continuous) W is given by: W = E f [W], where E

is the maximum input energy (J) and f is the repetition frequency (Hz).
*2: Maximum average input energy (per flash) E is given by: E = 1/2CV2 [J],
where V is the main discharge voltage (V) and C is the main discharge
capacitance (F).
*3: Calculated by: standard deviation/average light output 100 [%].
*4: At 5-watt operation.
*5: Adjusted at factory prior to shipment.
*6: Vs. conventional type. (L9455-0X/ L9456-0X).
*7: Adjustable with internal trimmer potentiometer or external voltage supply of
3.2 V to 4.8 V (125 Vout/ Vin).
*8: Flash pulse is synchronized with rising edge or rectangular wave.
News 2010 Vol. 2
25
Large area UV curing system

LC-L5
New MCP assemblies

F9890-31, F9890-32
Large area UV-LED based curing
High time resolution detectors for TOF-MS
The LC-L5 is the newest member in a family of LED and lamp based UV curing
systems offered by Hamamatsu. The LC-L5 is a dedicated large area curing
unit, designed for high throughput, large area, curing applications. Highly
uniform and stable irradiation is maintained throughout the LEDs long lifetime.
The F9890-31 and F9890-32 are two new MCP assemblies, designed for
Time of Flight Mass Spectrometry (TOF-MS). Both feature an excellent time
resolution of 450 ps with negligible ringing, at both +/- 10 kV high voltage
floating operation.
The LC-L5 also offers excellent scope for OEM users, enabling the system to be
expanded with multiple curing heads, to deliver true large area curing.
Hamamatsus advanced technology optimises the assembly design, resulting in

a high flatness MCP. The F9890-31 and F9890-32 assemblies both feature a
27 mm effective area, with 12 m and 6 m pore diameters respectively.
Features
105 mm x 10 mm to 305 mm x 10 mm curing heads
High output power 365 nm or 385 nm LEDs
20.000 hour LED lifetime
Highly uniform irradiation
Features
Fast time response and high time resolution
High voltage floating operation
Excellent MCP flatness
Low ringing
Applications
UV adhesive and ink curing
Semiconductor and liquid crystal ink exposure
Wide range of experimental techniques requiring stable UV light source
Typical output waveform (F9890-32)

20
OUTPUT VOLTAGE (mV)
Applications
TOF-MS
Ion detection
Specifications
Parameter
Illumination area*1
UV irradiation intensity*2
Peak wavelength
L114031104
L114032104
L114031112
105 x 10
L114032112
305 x 10
1,200
1,000
1,200
mW/cm2
-80
365 5
385 5
365 5
385 5
nm
h
Parameter
MCP channel diameter
450
Forced-air cooling by fan motor
+5 to +40
deg.C.
Storage ambient
temperature
-10 to +50
deg.C.
20 to 80
Storage ambient
humidity*4
Less than 80
External control
Lighting on/off, irradiation power adustment,

various alarm sinal output
IEC 61326-1 Group 1 Class A
IEC 61010-1
News 2010 Vol. 2
10
F9890-32
12
Effective area
27
mm
Assembly outer size
81
64.7
Parameter
mm
64.4
Number of MCPs
irradiation intensity is higher than 80 % at 2 mm distance from the output

surface of the L11403.
*2: UV irradiance is measured in the illumination area five minutes later after
lighting at peak wavelength and 2 mm distance from the output surface
of the L11403.
*3: Average time to fall to 70 % of initial intensity.
m
deg.
Assembly height size
*1: The
Unit
12
Typical electrical characteristics
Operating ambient
humidity*4
F9890-31
Bias angle
Operating ambient
temperature
General specifications
180
RESPONSE TIME (ns)
36 2
26
FWHM
450 ps
-60
mm
1,000
20,000
Applicable standard
-40
-120
-5
Unit
Input voltage (DC)
Cooling method
-20
-100
LED life*3
Power consumption
(max.)
TMCPB0108EA
LC-L5
F9890-32
mm
-
(Supply voltage: 2 kV, vacuum: 1.3 x 10-4 Pa, operating ambient temperature: +25 deg.C.)
F9890-31
F9890-32
Unit
Gain (min.)
1 x 106
Resistance
20 to 80
s-1 cm-2
450
ps
Dark count (max.)

Pulse width (FWHM) (typ.)
News 2010 Vol. 2
27
SYSTEMS PRODUCTS
SYSTEMS PRODUCTS
X-ray TDI camera

C10650-461
2.8M Scientific CMOS

board-level camera
2.8M Scientific CMOS board-level camera

available for OEM customers
X-ray TDI camera

The new C10650-461 is the latest model of the Hamamatsu X-ray TDI camera
series. It contains four 1536 x 128 pixel TDI modules compared to three
(C10650-361) and two (C10650-261) modules of the other types in this
series.
In early 2010, Hamamatsu released a revolutionary new type of camera based

on Scientific CMOS technology - the ORCA-Flash2.8.
The high signal to noise ratio in combination with 16 bit data output and the
CCD pixel size of just 48 microns at a scanning width of 292 mm makes this
X-ray TDI camera the optimum solution for many in-line quality assurance
applications.
C10650-461
Based on this successful introduction and the subsequent demand from

OEM customers, Hamamatsu has now introduced a 2.8M CMOS board-level
camera designed to be integrated into third-party equipment. The 2.8M CMOS
board-level camera has the same unique Hamamatsu FL280 scientific CMOS
sensor as the ORCA-Flash2.8, so OEM customers can now capture high-quality
images at fast speeds even in low light conditions.
Applications
Printed circuit board inspection
Battery inspection
High resolution non destructive in-line inspection
Medical product inspection
Full resolution 2.8 Mpixel, 12 bit images can be acquired at 30 frames/

second meaning that moving samples/targets can be captured with researchlevel image quality. OEM manufacturers wishing to investigate low-intensity
samples or fast moving targets can now achieve results that have not been
possible with traditional machine-vision, CMOS or even CCD cameras.
Specifications
CCD pixel number 6144 (H) x 128 (V)
X-ray sensitive area 292 mm (H) x 6 mm (V)
Data output 16 bit
Max. TDI line rate 2109 Hz (6.073 m/min)
No scanning gap in the image data
OEM customers can easily control the 2.8M CMOS board-level camera by
using the Hamamatsu Digital Camera (DCAM) application programming
interface (API). The Hamamatsu DCAM-API provides a standard means
of controlling all Hamamatsu cameras through a simple but powerful set
of functions. Importantly, using DCAM-API means that future changes or
modification to camera hardware can be incorporated without the need for
re-building the host application.
For even more demanding applications, customer specific solutions are

available on request.
Features
High resolution
High speed
High sensitivity and S/N ratio
16 bit
Detection width of 300 mm
Author: Stefan Kappelsberger, Hamamatsu Photonics Germany
Specifications
Type number
C10650-221
C10650-321
CCD pixel number
3072 (H) 128 (V)
4608 (H) 128 (V)
6144 (H) 128 (V)
Active CCD pixel number
3040 (H) 128 (V)
4608 (H) 128 (V)
6144 (H) 128 (V)*1
146 mm (H) 6 mm (V)
221 mm (H) 6 mm (V)
CCD pixel size
48 m 48 m
X-ray sensitive area

Window
292 mm (H) 6 mm (V)
FOS (Fiber optic plate with scintillator)
X-ray detection range
Approx. 25 kVp to 85 kVp
X-ray tolerance range
93.5 kVp, 50 W (max.)
CCD pixel clock

TDI line rate
C10650-461
Author: Jim Owens, Hamamatsu Photonics UK
4.0 MHz
11
Max. 2.109 kHz (6.073 m/min)
binning 2 2
Max. 1.858 kHz (10.702 m/min)
A/D converter
12 bit
Data output
12 bit
Interface (camera link)
16 bit
16 bit
Base Configuration
Pixel clock (camera link)
Third-party manufacturers looking for high-speed, high-sensitivity and highresolution imaging are now integrating the 2.8M CMOS board-level camera,
using the Hamamatsu Software Development Kit, into early stage prototypes
for next generation products in a wide variety of biological, industrial and
stand-alone markets.
ORCA-Flash2.8 Scientific CMOS camera
2.8M CMOS board-level camera
Features
2.8 Mpixel Scientific CMOS sensor with 3.63 m pixels
30 frames/sec at full resolution
3e (rms) readout noise
Multiple external trigger and timing output functions
IEEE1394b firewire output
Benefits
High resolution image
High speed capture
Detect low intensity signals
Easy to connect with peripheral equipment
Simple, low-cost interface
16.0 MHz
External mode or internal mode
TDI line rate control*2
0 dB to 20 dB (64 steps)
A/D gain value*3

*1: Active
CCD pixel number will vary due to variations in sensor overlap.

*2: Selectable by serial command.
*3: A/D gain value (M8815-01) is optional.
28
News 2010 Vol. 2
News 2010 Vol. 2
29
SYSTEMS PRODUCTS
SYSTEMS PRODUCTS
Quantaurus-QY
Nanoliter PIN tool

FDSS7000 extension
Quantum yields quick and easy
Nanoliter pin tool on FDSS7000/fluorescence assay
Hamamatsu presents its newest addition to the family of quantum yield

spectrometers: the Quantaurus-QY. Developed as a compact, easy to use
system it is based on Hamamatsus established C9920-02/-03 systems for
measuring photoluminescence quantum yields.
GPCRs (G protein coupled receptors) are a family of transmembrane receptors

triggering a large range of biological processes largely through intracellular
calcium flux. They have become the target of many pharmaceutical drugs: a
recent estimation shows that 50% of all modern drugs and 25% of the top
200 best selling drugs target GPCRs. Quantification of the drug's effect on
these receptors is now a major challenge for pharmaceutical and biotech
companies. On the one hand it is important to detect early and accurately
drugs acting on GPCRs, on the other hand the cost of a full screening
campaign can become astronomical (in cells or compound) thus forcing
companies to drastically reduce the volumes used in screening. Maintaining
this fragile yet crucial balance between result and cost was the aim of
Hamamatsu Photonics when we launched the FDSS7000 2 years ago.
The Quantaurus-QY employs a CCD spectrometer with an ultra-sensitive

cooled back-thinned sensor for highest sensitivity. An integration sphere is
incorporated for angle independent measurement conditions. A motorized,
fully software controlled monochromator allows you to select the excitation
wavelength from the output of a 150 W Xenon lamp. The system not only
measures the whole emission spectrum and calculates fluorescence or
photoluminescence quantum yields, but it also scans the respective PL
excitation spectra, shows dependency of the quantum yield on the excitation
wavelength and calculates colour coordinates of powder samples, thin films
and liquid samples. Latter ones can even be cooled to 77 K.
Two versions are available for spectral regions from 300 nm to 950 nm, or
400 nm to 1100 nm.
The new Quantaurus-QY is a compact and robust system with a small footprint
suitable for small labs.
Features
Measurement of absolute quantum yields, excitation spectra, chromaticity
Integration sphere as sample chamber
Space-saving compact design
Wide selection of analysis functions
Applications
Characterization of light emitting materials
Evaluation of fluorescent probe efficiencies
Development of organic EL materials
Quantaurus-QY
Lately, advances in fluorescence-based detection techniques and robotics

technologies have facilitated the adaptation of 1536 well format for High
Throughput Screening (HTS). Miniaturization for nanoliter transfers of drug is
increasing and is now more realistic and effective to screen compound activity.
The main advantage of this technology is to reduce the cost of reagents and
consumables. The second advantage is to avoid the compounds dilution and
precipitation effect.
Hamamatsu Photonics has developed a new nanoliter pin tool technology
adapted to 96, 384 or 1536 formats used on the FDSS7000. The principle
is to transfer by the pins a fixed nanoliter volume of compound while
simultaneously monitoring the kinetic effects in the cells plates. The
2 independent heads of the FDSS7000 allow this kind of experiment in the
same run: one head is used with classic tips (variable volume 2l-8l) while
the other head is used with pins dispensing a fixed nanoliter volume.
Pin technology raises two challenges to be used effectively: washing and
mixing. The washing step is crucial to run a full screening campaign and to
avoid cross contamination of source plates. Mixing needs to be used in order
to achieve contact between the compound and the cells.
Nanoliter pin tool
Material
Hamamatsu Photonics provides the adaptor between the
standard head and the pin tool. V&P supply the 1536 pins and
pin tool for HTS.
Hamamatsu material (FDSS7000)
A10118-27 pin tool head for short pin
A10118-29 pin tool head for long pin
V&P 1536 pin tool material:
1536 pins (www.V&P.com)
Bridge plate: #MG08-047-4M9002
Midfloat plate: #MG08-047-4M9003
Bottom float plate: #MG08-047-4M9004
Applications
GPCR assays
Calcium assays (Fluo4, FMP,FRET)
Other ion channel assay
New option
Vacuum system
Author: Tanja Schttrigkeit, Hamamatsu Photonics Germany
The FDSS7000 answers these points with its two built-in washing stations
and mixing feature. FDSS technology is a suitable High Throughput Screening
system for kinetic assays using nanoliter pin tools.
New option
Application: Aequorin
Solution: EM CCD in order to use the mixing function in
front line of the FDSS7000
Authors: Christelle Cantone & Jean-Marc D'Angelo, Hamamatsu Photonics France
30
News 2010 Vol. 2
News 2010 Vol. 2
31
SYSTEMS PRODUCTS
NanoZoomer 2.0
new fluorescence unit
Fax reply
Flexible fluorescence module for NanoZoomer 2.0
Company
Position within the company
In many tissue-based applications, the use of multiple fluorescent biomarkers

is more commonplace.
Surname, first name
Telephone
Street, street number or post box number
Fax
Postal code, place
E-mail
The Hamamatsu NanoZoomer 2.0 equipped with the new fluorescence option
make it easy to scan brightfield and multiple fluorescent slides, on the same
system. Based on a combination of filter-wheels with up to six filter positions
(excitation and emission) and filter-cubes, the NanoZoomer 2.0 can now scan
numerous colour channels and offers a great flexibility. Optimized Hamamatsu
illumination and optical methods used significantly reduce the problem
of photobleaching. All images can be visualized separately or merged in
advanced NDP.View software.
Hamamatsu Photonics is allowed to send information about their products to this E-mail address, until further
notice from the addressee. Hamamatsu Photonics will not supply this information to third parties.
NanoZoomer 2.0 HT
My address has changed. Please send me the Hamamatsu Photonics News regularly at the address above.
NanoZoomer 2.0 series includes two types of scanners, which can both
work in fluorescence. The L11600 module can be added at any time. The
NanoZoomer 2.0 HT, with a 210 slide loading capability, enables highthroughput scans of large batches of samples.
The present addressee of the Hamamatsu Photonics News is no longer interested in this magazine.
Please send the Hamamatsu News in future to the address above.
A more compact model, the NanoZoomer 2.0 RS, can scan up to 6 slides
(76 mm x 26 mm), with the same high resolution and high scanning speed as
the HT. The 2.0 RS model can also handle 2 double-size slides (76 mm x
52 mm).
Please do not send me Hamamatsu Photonics News in the future.
Applications
Neuroscience
General histology (ImmunoHistoChemistry, ImmunoFluorescence, H&E,)
Oncology
Toxicologic pathology
Cytology
I want to receive the Hamamatsu Photonics News regularly. Please add me to your distribution list.
I am interested in the following products, which are described in the Hamamatsu Photonics News 2010 Vol. 2:
NanoZoomer 2.0 RS
Author: Quynh-Nhu Trinh-Xuan, Hamamatsu Photonics France
07
08
10
12
13
14
15
Electron Tube Products:
16
18
19
20
21
22
23
Systems Products:
28
29
30
31
32
24
25
26
27
Please contact me.
Features/specifications
I am searching for a solution for the following application:
Parameter
NanoZoomer 2.0 HT
NanoZoomer 2.0 RS
Slide loader
Automatic: 210 slides
6 standard slides,
2 double slides
Scanning resolution
0.46 m/pixel (@ 20X) and 0.23 m/pixel (@40X)
Scanning method
TDI scanning
Scanning speed (area 15 mm x 15 mm)

Fluorescence L11600
32
Solid State Products:
LX-2000 light source
Approx. 1 min at 20X, approx. 2.5 min at 40X

Optional
News 2010 Vol. 2
News 2010 Vol. 2
33
Exhibitions 2010/2011
Hamamatsu Photonics Europe
May 2011
23.05.-26.05.11
Laser World of Photonics (Munich / Germany)
www.world-of-photonics.net
June 2011
01.06. - 04.06.11
EACTA (Vienna / Austria)
07.06. - 09.06.11
Sensor und Test (Nrnberg / Germany)
www.sensor-test.de
13.06. - 16.06.11
World Society of Cardio Thoracic Surgeons
November 2010
March 2011
(Berlin / Germany)
www.wscts2011.com
03.11. - 04.11.10
03.03. - 07.03.11
16.06. - 19.06.11
Photonex (Coventry / England)
ECR Tagung (Vienna / Austria)
95. Jahrestagung der dt. Gesellschaft fr Pathologie
www.photonex.org
www.myesr.org
(Leipzig / Germany)
09.11. - 11.11.10
16.03. - 17.03.11
www.pathologenkongress.de
Vision (Stuttgart / Germany)
Easyfairs Elektronik (Gothenburg / Sweden)
www.vision-messe.de
http://www.easyfairs.com/sv/events_216/elektro-
09.11. - 12.11.10
nik_11481/elektronik_11482/
Electronica (Munich / Germany)
23.03. - 27.03.11
www.electronica.de
Neurowissenschaftliche Tagung
17.11. - 19.11.10
(Goettingen / Germany)
September 2011
26.09. - 28.09.11
Biomedical Science Congress (Birmingham / UK)
www.ibmscongress.com
Photonica 2010 (Milan)

http://www.photonicaexpo.eu/it_hte/index_pho.asp
22.11. - 26.11.10
Carrefour Pathologie (Paris / France)
24.11.10
38th Scottish Microscopy Symposium
(Aberdeen / Scotland)
www.scottishmicroscopygroup.org.uk
April 2011
05.04. - 07.04.11
Photon Messe (Stuttgart / Germany)
http://www.photon-expo.com/de/pts_2011_europe/
show_info/trade_fair_outline.htm
October 2011
10.10. - 14.10.11
52nd Meeting of the European Society for Paediatric
Research (ESPR) (Newcastle / England)
www2.kenes.com
11. Bundeskongress Pathologie (Berlin / Germany)
08.11. - 10.11.11
Vision (Stuttgart / Germany)
21.01. - 23.01.11
Dutch Pathology Days (Zeist / Netherlands)
www.vision-messe.de
Bamberger Morphologietage (Bamberg / Germany)
17.04. - 20.04.11
www.morphologietage.de
Focus on Microscopy (Konstanz / Germany)

www.focusonmicroscopy.org
27.04. - 30.04.11
BSCB-BSDB Spring Meeting (Kent / England)
13.02. - 16.02.11
DGTHG Tagung (Stuttgart / Germany)
www.dgthg-jahrestagung.de
34
News 2010 Vol. 2
North-West: (for system products)

Phone: +49 (0) 2831 94506
Fax: +49 (0) 2831 94507
E-mail: wgraewe@hamamatsu.de
www.hamamatsu.de
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Phone: +41 (0) 32 625 60 60
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Denmark:
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Phone: +45 70 20 93 69
Fax: +45 44 20 99 10
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Netherlands:
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Phone: +31 36-5382-123
Fax: +31 36-5382-124
E-mail: info@hamamatsu.nl
Poland:
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ul. sw. A. Boboli 8, PL-02525 Warsaw
Phone: +48 (0) 22 6460016
Fax: +48 (0) 22 6460018
E-mail: jbaszak@hamamatsu.de
France:
Hamamatsu Photonics France S.A.R.L.
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Parc du Moulin de Massy
F-91882 Massy Cedex
Phone: +33 (0) 1 69 53 71 00
Fax: +33 (0) 1 69 53 71 10
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www.hamamatsu.fr
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C. Argenters, 4 edif 2
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B-1348 Louvain-la Neuve
Phone: +32 (0) 10 45 63 34
Fax: +32 (0) 10 45 63 67
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Hamamatsu Photonics Italia S.r.l. a socio unico
Strada della Moia 1 int. 6,
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Fax: +39-02 9358 1741
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South office:
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Phone: +39-06 5051 3454
Fax: +39-06 5051 3460
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United Kingdom:
Hamamatsu Photonics UK Ltd.
2 Howard Court, 10 Tewin Road,
Welwyn Garden City
Hertfordshire AL7 1BW . England
Phone: +44 (0) 1707 294888
Fax: +44 (0) 1707 325777
E-mail: info@hamamatsu.co.uk
www.hamamatsu.co.uk
South Africa:
PO Box 1112, Buccleuch 2066
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Phone/Fax: +27 (0) 11 802 5505
Cellphone: +27 (0) 83 298 9266
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Northern Europe:
Hamamatsu Photonics Norden AB
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SE-17141 Solna (Sweden)
Phone: +46 (0) 8 50 90 31 00
Fax: +46 (0) 8 50 90 31 01
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Russia:
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RU-127015, Moscow
Phone: +7 (495) 258 85 18
Fax: +7 (495) 258 85 19
E-mail: info@hamamatsu.ru
November 2011
14.04. - 15.04.11
February 2011
Grenoble:
Buro Club Meylan
29 Boulevard des Alpes, 38246 Meylan Cedex
Phone: +33 (0) 4 76 6144 50
Fax: +33 (0) 4 76 6144 44
E-mail: jroux@hamamatsu.fr
08.04. - 10.04.11
www.bundeskongress-pathologie.de
January 2011
Germany:
Hamamatsu Photonics Deutschland GmbH
Arzbergerstr. 10, D-82211 Herrsching
Phone: +49 (0) 8152 375-0
Fax: +49 (0) 8152 2658
E-mail: info@hamamatsu.de
www.bscb-bsdb-meetings.co.uk
Impressum
Hamamatsu Photonics News
Publisher and copyright:
Hamamatsu Photonics
Deutschland GmbH
Arzbergerstr. 10, D-82211 Herrsching
am Ammersee, Germany
Phone: +49 (0) 8152 375-0
Fax: +49 (0) 8152 2658
Sitz der Gesellschaft: Herrsching

Amtsgericht Mnchen HRB 79474
Geschftsfhrer: Dr. Peter Eggl
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http://www.hamamatsu.de
info@hamamatsu.de
Editor and responsible for content:

Dr. Peter Eggl
Publishing frequency:
Bi-annual, Date of this issue
November 2010
Graphic and realisation:

SINNIQ Technologiewerbung Ltd.
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News 2010 Vol. 2
35
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NEWS 02

2.8M Scientific CMOS

New InGaAs PIN photodiodes

ELECTRON TUBE PRODUCTS

New MCP assemblies

InGaAs linear image sensors

SOLID STATE PRODUCTS

ELECTRON TUBE PRODUCTS

15 New InGaAs PIN photodiodes 27 New MCP assemblies

Wide spectral response range (0.5 to 1.7 m)

SOLID STATE PRODUCTS

ELECTRON TUBE PRODUCTS

InGaAs linear image sensors

PMT series H11451 to H11460

X-ray TDI camera

InGaAs linear image sensors

PMT series R7600U-300

2.8M Scientific CMOS board-level camera

PMT series R1288AH

IR-enhanced Si PIN photodiodes

PMT module series H11461

Nanoliter PIN tool FDSS7000 extension

PMT module H11432

NanoZoomer 2.0 new fluorescence unit

IR-enhanced CCD image sensors

New high voltage power supply

New InGaAs PIN photodiodes

New UV power meter

Compact xenon flash lamp modules

High power 5W XeF module

Large area UV curing system

New MCP assemblies

News 2010 Vol. 2

Hamamatsu Photonics Europe

News 2010 Vol. 2

Hamamatsu Photonics Europe GmbH established

The key objectives of the European

Hamamatsu Photonics France celebrates its

Hamamatsu Photonics obtains factory site from SONY EMCS

News 2010 Vol. 2

The team of Hamamatsu Photonics France

News 2010 Vol. 2

SOLID STATE PRODUCTS

PRELIMINARY InGaAs linear image sensors

Vehicle count hits 100 MOST car models

Short-wavelength enhanced type InGaAs

MOST technology's path of success is climbing steeply

The G11608 series consist of a CMOS readout integrated circuit and an

The MOST Cooperation is pleased to announce the latest achievements of

L11354-01 (left), S11355-01 (middle), P11379 (right)

MOST goes hybrid and electrical

Photo sensitivity (A/W)

Compared to Hamamatsu' conventional InGaAs linear image sensors, the

News 2010 Vol. 2

MOST150 is on the road to implementation

The MOST architecture simplifies moving between speed

Pixel size [(H) x (V)]

Data rate (max.)

For more information see

News 2010 Vol. 2

SOLID STATE PRODUCTS

SOLID STATE PRODUCTS

InGaAs linear image sensors PRELIMINARY