Documente Academic
Documente Profesional
Documente Cultură
Outline
Basic Process
Definitions
Fundamentals of Exposure
Exposure Systems
Resists
Advanced Lithography
Recommended reading
Plummer, Chapter 5
Other: Campbell, Chapter 7,8,9
IC Process
An idea
Circuit Design
Process Simulation
Device Simulation
Layout
BOXES
Design Rules
Wafers
A file
Mask
Shop
Wafer
Fab
Litho
Anneal
Litho
Etch
Etch
Oxidation/Deposition
Metal Deposition
Litho
Litho
Etch
Etch
Implant
Sinter
Drives Infrastructure
Cleanliness
Vibration
Temperature and Humidity
Semiconductor Roadmap
Expose
Mask
Develop
Etch*
Strip resist
*Wet
etch
3.155J/6.152J Lecture 10 Slide 6
Definitions
Metrics
Resolution
Throughtput
Registration (Alignment)
Exposure Systems - UV
Projection - Fraunhofer
Proximity - Fresnel
Contact - Fresnel
Advanced
Resists
Positive/Negative
Contrast
CMTF
Lithography Systems
Proximity
Contact
Projection
Mask
Wafer
Fall 2003 M.A. Schmidt
Contact/Proximity Printing
Contact/Proximity Printing
Projection Printing
Note limit of d
Fall 2003 M.A. Schmidt
Resolving Features
Rayleigh Limit
n=1 (air)
Mask
MTF =
Distance
Intensity
Wafer
Imax - Imin
Imax + Imin
Imax
Imin
Fall 2003 M.A. Schmidt
Distance
Depth of Focus
O/4 = G - Gcos)
Small ):
O/4 = G)2/2
) = sin ) = d/2f = NA
d
)
R = 0.61O/NA = k1O/NA
Resist Contrast
Dose = Intensity (W/cm-2) x time (s)
Negative
Q0
Qf
Developed Thickness
Developed Thickness
Positive
Qf
Q0
J = 1 / log10(Qf/Q0)
Fall 2003 M.A. Schmidt
Dose
Resist Thickness
Distance
Distance
Dose
Resist Thickness
Distance
Increase
Time
Dose
Distance
Decrease
Contrast
Increase
Time
Dose
Dose
Decreasing Pitch
Qf
Q0
Distance
Resist Thickness
Resist Thickness
Distance
Distance
Fall 2003 M.A. Schmidt
Developed Thickness
Q0
Qf
J = 1 / log10(Qf/Q0)
CMTF =
Qf Q0
10J 1
= J
Qf + Q0
10 + 1
If J = 3, CMTF = 0.37
If J = 2, CMTF = 0.52
CMTF
CMTF