Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time

VBE = 0 V

PINNING - SOT186A
PIN

Ths 25 C
IC = 4.5 A; IB = 1.1 A
IF = 4.5 A
ICM = 4.5 A; IB(end) = 1.1 A

PIN CONFIGURATION

TYP.

MAX.

UNIT

4.5
1.6
0.4

1500
700
8
15
35
1.0
0.6

V
V
A
A
W
V
A
V
s

SYMBOL

DESCRIPTION

case

base

collector

emitter

b
Rbe

case isolated

1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

average over any 20 ms period

Ths 25 C

MIN.

MAX.

UNIT

-65
-

1500
700
8
15
4
6
100
5
35
150
150

V
V
A
A
A
A
mA
A
W
C
C

TYP.

MAX.

UNIT

3.6

K/W

55

K/W

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

with heatsink compound

Rth j-a

Junction to ambient

in free air

1 Turn-off current.

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

R.M.S. isolation voltage from all

three terminals to external
heatsink

f = 50-60 Hz; sinusoidal

waveform;
R.H. 65% ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz

heatsink

MIN.

TYP.

MAX.

UNIT

2500

10

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

140
7.5
700

13.5
33
-

390
-

mA
V

4
-

13
5.5
1.6

1.0
1.3
7.0
2.0

V
V

TYP.

MAX.

UNIT

80

pF

5.0
0.4

6.0
0.6

s
s

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS
2

ICES
ICES

Collector cut-off current

IEBO
BVEBO
Rbe
VCEOsust

Emitter cut-off current

Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage

VCEsat
VBEsat
hFE
hFE
VF

Collector-emitter saturation voltage

Base-emitter saturation voltage
DC current gain
Diode forward voltage

VBE = 0 V; VCE = VCESMmax

VBE = 0 V; VCE = VCESMmax;
Tj = 125C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4.5 A; IB = 1.1 A
IC = 4.5 A; IB = 1.7 A
IC = 1 A; VCE = 5 V
IC = 4.5 A; VCE = 1 V
IF = 4.5 A

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Cc

Collector capacitance

IE = 0 A; VCB = 10 V; f = 1 MHz

ts
tf

Switching times (line deflection

circuit). Fig.1, Fig.2 and Fig.3.
Turn-off storage time
Turn-off fall time

ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 H;

-VBB = 4 V; (-dIB/dt = 0.6 A/s)

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

ICsat

TRANSISTOR
IC

BU1508DX

100

h FE

DIODE
Tj = 25 C

Tj = 125 C

5V

IBend

IB

10
t
20us

26us

1V

64us
VCE

1
0.01

0.1

10

1
IC / A

Fig.1. Switching times waveforms.

Fig.4. Typical DC current gain. hFE = f (IC)

parameter VCE
VBESAT / V

ICsat

1.2

90 %

Tj = 25 C

1.1
IC

Tj = 125 C

1.0
0.9
10 %

0.8

tf

IC/IB=

ts

0.7

IB
IBend

0.6

0.5

0.4

0.1

1
IC / A

- IBM

Fig.2. Switching times definitions.

Fig.5. Typical base-emitter saturation voltage.

VBEsat = f (IC); parameter IC/IB
VCESAT / V

+ 150 v nominal
adjust for ICsat

1.0
IC/IB=

0.9

0.8

0.7

1mH

0.6
0.5

Tj = 25 C

0.4

D.U.T.
LB

IBend

10

Tj = 125 C

0.3

12nF

0.2
0.1

-VBB

Rbe

Fig.3. Switching times test circuit.

September 1997

0.1

1
IC / A

10

Fig.6. Typical collector-emitter saturation voltage.

VCEsat = f (IC); parameter IC/IB

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

VBESAT / V

1.2

Tj = 25 C

1.1

Tj = 125 C

1.0
0.9

IC=
6A

0.8

4.5A
3A
2A

0.7
0.6
0

2
IB / A

ts

IC =
4.5A
3.5A
tf
0.1

Fig.7. Typical base-emitter saturation voltage.

VBEsat = f (IB); parameter IC

1
IB / A

10

Fig.10. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85C

VCESAT / V

10

ts, tf / us

12
11
10
9
8
7
6
5
4
3
2
1
0

Tj = 25 C

110

Tj = 125 C

100
90

6A

Normalised Power Derating

PD%

120

with heatsink compound

80
70

4.5A

60

50
40

3A

30
20

IC=2A

10

0.1

0.1

1
IB / A

10

Fig.8. Typical collector-emitter saturation voltage.

VCEsat = f (IB); parameter IC

1000

20

40

60

80
Ths / C

100

120

140

Fig.11. Normalised power dissipation.

PD% = 100PD/PD 25C = f (Ths)

Eoff / uJ

Zth / (K/W)
10

IC = 4.5A
0.5
1

0.2

3.5A

0.1
0.05

100
0.1

0.02

PD

tp

D=

D=0
T

10
0.1

1
IB / A

0.01
1E-06

10

1E-02
t/s

1E+00

Fig.12. Transient thermal impedance.

Zth j-hs = f(t); parameter D = tp/T

Fig.9. Typical turn-off losses. Tj = 85C

Eoff = f (IB); parameter IC

September 1997

1E-04

tp
T

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

100

BU1508DX

IC / A

= 0.01

ICM max

tp =

IC max

10

II

10 us

Ptot max

100 us

1 ms

0.1
10 ms
DC

0.01
1

10

1000

100
VCE / V

Fig.13. Forward bias safe operating area. Ths = 25C

I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 5 newton force on the centre of
the envelope.

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g

10.3
max

4.6
max

3.2
3.0

2.9 max

2.8

Recesses (2x)
2.5
0.8 max. depth

6.4
15.8
19
max. max.

15.8
max

seating
plane

3 max.
not tinned
3
2.5
13.5
min.
1
0.4

1.0 (2x)
0.6
2.54

0.9
0.7

0.5
2.5

5.08

1.3

Fig.14. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.300

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997

Rev 1.300

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