FDS4435BZ

P-Channel PowerTrench MOSFET

-30V, -8.8A, 20m
Features

General Description

Max rDS(on) = 20m at VGS = -10V, ID = -8.8A

This

P-Channel

MOSFET

is

produced

using

Fairchild

Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A

Semiconductors advanced PowerTrench

Extended VGSS range (-25V) for battery applications

been especially tailored to minimize the on-state resistance.

HBM ESD protection level of 3.8KV typical (note 3)

This device is well suited for Power Management and load

High performance trench technology for extremely low rDS(on)

switching applications common in Notebook Computers and

High power and current handling capability

Portable Battery Packs.

process that has

Termination is Lead-free and RoHS compliant

D
D
D

G
S
S

Pin 1

SO-8

MOSFET Maximum Ratings TA = 25C unless otherwise noted

Symbol
VDS

Drain to Source Voltage

Parameter

VGS

Gate to Source Voltage

Drain Current -Continuous

ID

TA = 25C

(Note 1a)

-Pulsed

PD

Ratings
-30

Units
V

25

-8.8
-50

Power Dissipation

TA = 25C

(Note 1a)

2.5

Power Dissipation

TA = 25C

(Note 1b)

1.0

EAS

Single Pulse Avalanche Energy

TJ, TSTG

Operating and Storage Junction Temperature Range

(Note 4)

A
W

24

mJ

-55 to +150

Thermal Characteristics
RJC

Thermal Resistance, Junction to Case

25

RJA

Thermal Resistance, Junction to Ambient

(Note 1a)

50

C/W

Package Marking and Ordering Information

Device Marking
FDS4435BZ

Device
FDS4435BZ

2007 Fairchild Semiconductor Corporation

FDS4435BZ Rev.C

Package
SO-8

Reel Size
13

Tape Width
12mm

Quantity
2500units

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

June 2007

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain to Source Breakdown Voltage

ID = -250A, VGS = 0V

BVDSS
TJ

Breakdown Voltage Temperature

Coefficient

-30

ID = -250A, referenced to 25C

IDSS

Zero Gate Voltage Drain Current

VDS = -24V, VGS = 0V

IGSS

Gate to Source Leakage Current

VGS = 25V, VDS = 0V

10

-3

-21

mV/C

On Characteristics
VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = -250A

VGS(th)
TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = -250A, referenced to 25C

VGS = -10V, ID = -8.8A

16

20

rDS(on)

Static Drain to Source On Resistance

VGS = -4.5V, ID = -6.7A

26

35

VGS = -10V, ID = -8.8A, TJ = 125C

22

28

VDS = -5V, ID = -8.8A

24

gFS

Forward Transconductance

-1

-2.1

mV/C

m
S

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate Resistance

VDS = -15V, VGS = 0V,

f = 1MHz
f = 1MHz

1385

1845

pF

275

365

pF

230

345

pF

4.5

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Qg

Total Gate Charge

VGS = 0V to -10V

Qg

Total Gate Charge

VGS = 0V to -5V

Qgs

Gate to Source Charge

Qgd

Gate to Drain Miller Charge

VDD = -15V, ID = -8.8A,

VGS = -10V, RGEN = 6

VDD = -15V,
ID = -8.8A

10

20

ns

12

ns

30

48

ns

12

22

ns

28

40

nC

16

23

nC

5.2

nC

7.4

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0V, IS = -8.8A

(Note 2)

IF = -8.8A, di/dt = 100A/s

-0.9

-1.2

29

44

ns

23

35

nC

NOTES:
1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by
the user's board design.
a. 50C/W when mounted on
a 1 in2 pad of 2 oz copper.

b. 125C/W when mounted on

a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V

2007 Fairchild Semiconductor Corporation

FDS4435BZ Rev.C

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted

4.0

50
40

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -10V
VGS = -5V
VGS = -4.5V

30
VGS = -4V

20

VGS = -3.5V

10
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX

0
0

3.0
VGS = -4.5V

2.5
VGS = -4V

1.5
VGS = -10V

1.0
0.5
0

10

20

30

40

50

-ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6

60
ID = -8.8A
VGS = -10V

rDS(on), DRAIN TO

1.4
1.2
1.0
0.8
0.6
-75

-50

-25

PULSE DURATION = 80s

DUTY CYCLE = 0.5%MAX

ID = -8.8A

25

50

75

SOURCE ON-RESISTANCE (m)

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

VGS = -5V

2.0

-VDS, DRAIN TO SOURCE VOLTAGE (V)

50
40
TJ = 125oC

30
20

TJ = 25oC

10

100 125 150

TJ, JUNCTION TEMPERATURE ( C)

o

10

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance

vs Junction Temperature

Figure 4. On-Resistance vs Gate to

Source Voltage

50

100
-IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80s

DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)

PULSE DURATION = 80s

DUTY CYCLE = 0.5%MAX

VGS = -3.5V

3.5

40
VDS = -5V

30
20

TJ = 150oC

10
TJ = 25oC

TJ =-55oC

0
1

1
0.1

TJ = 25oC

TJ = 150oC

0.01

TJ = -55oC

0.001

0.0001
0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

2007 Fairchild Semiconductor Corporation

FDS4435BZ Rev.C

VGS = 0V

10

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

-VGS, GATE TO SOURCE VOLTAGE(V)

10

4000
ID = -8.8A

Ciss

8
CAPACITANCE (pF)

VDD = -10V

6
VDD = -15V

VDD = -20V

4
2

1000
Coss

Crss
f = 1MHz
VGS = 0V

0
0

10

15

20

25

100
0.1

30

Qg, GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain

to Source Voltage
-4

10
-Ig, GATE LEAKAGE CURRENT(A)

-IAS, AVALANCHE CURRENT(A)

20

10

TJ = 25oC
TJ = 125oC

VDS = 0V
-5

10

TJ = 125oC
-6

10

-7

10

TJ = 25oC
-8

10

-9

1
0.01

0.1

10

10

30

10

15

20

25

30

-VGS, GATE TO SOURCE VOLTAGE(V)

tAV, TIME IN AVALANCHE(ms)

Figure 9. Unclamped Inductive

Switching Capability

Figure 10. Gate Leakage Current vs Gate to

Source Voltage
100

10
8

-ID, DRAIN CURRENT (A)

-ID, DRAIN CURRENT (A)

30

10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -10V

6
VGS = -4.5V

4
2

100us

10

1ms
10ms

1
THIS AREA IS
LIMITED BY rDS(on)

0.1

100ms
SINGLE PULSE
TJ = MAX RATED

1s
10s
DC

RJA = 125 C/W

o

TA = 25oC

RJA = 50 C/W

0.01
0.1

0
25

50

75

100

125

150

TA, AMBIENT TEMPERATURE ( C)

Figure 11. Maximum Continuous Drain

Current vs Ambient Temperature

2007 Fairchild Semiconductor Corporation

FDS4435BZ Rev.C

10

80

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 12. Forward Bias Safe

Operating Area

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

FDS4435BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

100
P(PK), PEAK TRANSIENT POWER (W)

VGS = -10V

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 T
A
-----------------------125

I = I25

10

TA = 25oC

SINGLE PULSE
RJA = 125oC/W

0.6
-3
10

-2

-1

10

10

10

10

10

10

t, PULSE WIDTH (s)

Figure 13. Single Pulse Maximum Power Dissipation

2
DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL
IMPEDANCE, ZJA

1
D = 0.5
0.2
0.1
0.05
0.02
0.01

PDM

0.1

t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA

SINGLE PULSE
RJA = 125oC/W

0.01
-3
10

-2

10

-1

10

10

10

10

10

t, RECTANGULAR PULSE DURATION (s)

Figure 14. Transient Thermal Response Curve

2007 Fairchild Semiconductor Corporation

FDS4435BZ Rev.C

www.fairchildsemi.com

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Advance Information

Formative or In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Definition

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve
design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31

2007 Fairchild Semiconductor Corporation

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