PROFET BTS 640 S2

Smart Sense High-Side

Power Switch

Product Summary
Operating voltage
On-state resistance
Load current (ISO)
Current limitation

Features

Short circuit protection

Current limitation
Proportional load current sense
CMOS compatible input
Package
Open drain diagnostic output
Fast demagnetization of inductive loads
TO220-7-11
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Overload protection
Thermal shutdown
1
Standard (staggered)
Overvoltage protection including load dump (with
external GND-resistor)
Reverse battery protection (with external GND-resistor)
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection

Vbb(on)
RON
IL(ISO)
IL(SCr)

5.0 ... 34
V
30 m
12.6
A
24
A

TO263-7-2

TO220-7-12

1
SMD

1
Straight

Application

C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.

Block Diagram
4
+ V bb

Voltage

Overvoltage

Current

Gate

source

protection

limit

protection

V Logic

IN

ST

Voltage

Charge pump

sensor

Level shifter
Rectifier

ESD

Logic

Limit for
unclamped
ind. loads
Output
Voltage
detection

OUT

IL
Current
Sense
Load

Temperature
sensor

IS

I IS
R

GND

IS

6, 7

O
GND

PROFET
Load GND

2
Signal GND

Semiconductor Group

Page 1 of 15

2003-Oct-01

BTS 640 S2
Pin

Symbol

ST

Function
Diagnostic feedback: open drain, invers to input level

GND

Logic ground

IN

Input, activates the power switch in case of logical high signal

Vbb

IS

Positive power supply voltage, the tab is shorted to this pin

Sense current output, proportional to the load current, zero in
the case of current limitation of load current

6&7

OUT
(Load, L)

Output, protected high-side power output to the load.

Both output pins have to be connected in parallel for operation
according this spec (e.g. kILIS).
Design the wiring for the max. short circuit current

Maximum Ratings at Tj = 25 C unless otherwise specified

Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection

Symbol
Vbb
Vbb

Values
43
34

Unit
V
V

60

self-limited
-40 ...+150
-55 ...+150
85

A
C

0,41
3,5
1.0
4.0
8.0

Tj Start=-40 ...+150C

Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V

VLoad dump3)

Load current (Short circuit current, see page 5)

Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 C
Inductive load switch-off energy dissipation, single pulse

IL
Tj
Tstg
Ptot

RI2)= 2 , RL= 1 , td= 200 ms, IN= low or high

Vbb = 12V, Tj,start = 150C, TC = 150C const.

IL = 12.6 A, ZL = 4,2 mH, 0 : EAS

IL = 4 A, ZL = 330 mH, 0 : EAS
Electrostatic discharge capability (ESD)
IN: VESD
(Human Body Model)
ST, IS:
out to all other pins shorted:

kV

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

R=1.5k; C=100pF

Input voltage (DC)

Current through input pin (DC)
Current through status pin (DC)
Current through current sense pin (DC)

VIN
IIN
IST
IIS

-10 ... +16

2.0
5.0
14

V
mA

see internal circuit diagrams page 8

1)
2)
3)

Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor in the GND connection is recommended).
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839

Semiconductor Group

Page 2

2003-Oct-01

BTS 640 S2
Thermal Characteristics
Parameter and Conditions
Thermal resistance

Symbol

chip - case: RthJC

junction - ambient (free air): RthJA
SMD version, device on PCB4):

min
----

Values
typ
max
-- 1.47
-75
33
--

Unit
K/W

Electrical Characteristics
Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Values
min
typ
max

Unit

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 6&7)
Tj=25 C: RON
Tj=150 C:

--

27
54

30
60

--

50

--

mV

11.4

12.6

--

IL(NOM)
IL(GNDhigh)

4.0
--

4.5
--

-8

A
mA

9; not subject to production test, specified by design

Turn-on time
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 , Tj =-40...+150C

ton
toff

25
25

70
80

150
200

Slew rate on

dV /dton

0.1

--

V/s

Slew rate off

-dV/dtoff

0.1

--

V/s

IL = 5 A

Output voltage drop limitation at small load

currents (pin 4 to 6&7), see page 14
IL = 0.5 A

VON(NL)

Tj =-40...+150C:

Nominal load current, ISO Norm (pin 4 to 6&7)

IL(ISO)

VON = 0.5 V, TC = 85 C

Nominal load current, device on PCB4)

TA = 85 C, Tj 150 C VON 0.5 V,

Output current (pin 6&7) while GND disconnected

or GND pulled up, Vbb=30 V, VIN= 0, see diagram page

10 to 30% VOUT, RL = 12 , Tj =-40...+150C

70 to 40% VOUT, RL = 12 , Tj =-40...+150C

4)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.

Semiconductor Group

Page 3

2003-Oct-01

BTS 640 S2
Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Values
min
typ
max

Operating Parameters
Operating voltage 5)
Undervoltage shutdown
Undervoltage restart

Vbb(on)
Tj =-40...+150C: Vbb(under)
Tj =-40...+25C: Vbb(u rst)
Tj =+150C:
Undervoltage restart of charge pump
see diagram page 13
Tj =-40...+25C: Vbb(ucp)
Tj =25...150C:
Undervoltage hysteresis
Vbb(under)

5.0
3.2
--

--4.5

34
5.0
5.5
6.0

V
V
V

----

4.7
-0.5

6.5
7.0
--

Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection6)

34
33
-41
43

--1
-47

43
---52

V
V
V
V

----

4
12
--

15
25
10

--

1.2

mA

Tj =-40...+150C:

Vbb(under) = Vbb(u rst) - Vbb(under)

Ibb=40 mA

Vbb(over)
Tj =-40...+150C: Vbb(o rst)
Tj =-40...+150C: Vbb(over)
Tj =-40C: Vbb(AZ)
Tj =+25...+150C
Tj =-40...+150C:

Standby current (pin 4)

Tj=-40...+25C: Ibb(off)
Tj= 150C:
IL(off)
Off state output current (included in Ibb(off))
VIN=0

VIN=0,

6)

7)

Tj =-40...+150C:

Operating current (Pin 2)7), VIN=5 V

5)

Unit

IGND

At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT Vbb - 2 V
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram page 9.
Add IST, if IST > 0, add IIN, if VIN>5.5 V

Semiconductor Group

Page 4

2003-Oct-01

BTS 640 S2
Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Protection Functions8)
Initial peak short circuit current limit (pin 4 to 6&7)
IL(SCp)
Tj =-40C:
Tj =25C:
=+150C:
Tj
Repetitive short circuit shutdown current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 12)

Values
min
typ
max

Unit

48
40
31

56
50
37

65
58
45

--

24

--

41
43
150
---

-47
-10
--

-52
--32

V
C
K
V

--

600

--

mV

4550
3300

5000
5000

6000
8000

4550
4000

5000
5000

5550
6500

5.4

6.1

6.9

0
0
0

----

1
15
10

Output clamp (inductive load switch off)

Tj =-40C:
Tj =+25..+150C:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 9)
at VOUT = Vbb - VON(CL); IL= 40 mA,

VON(CL)
Tjt
Tjt
-Vbb

Reverse battery voltage drop (Vout > Vbb)

IL = -5 A
Tj=150 C: -VON(rev)
Diagnostic Characteristics
Current sense ratio10), static on-condition,
VIS = 0...5 V, Vbb(on) = 6.511)...27V,
Tj
kILIS = IL / IIS

= -40C, IL = 5 A: kILIS
Tj= -40C, IL= 0.5 A:

Tj= 25...+150C, IL= 5 A:

,
Tj= 25...+150C, IL = 0.5 A:
Current sense output voltage limitation
Tj = -40 ...+150C

IIS = 0, IL = 5 A:

VIS(lim)

Current sense leakage/offset current

Tj = -40 ...+150C
VIN=0, VIS = 0, IL = 0: IIS(LL)
VIN=5 V, VIS = 0, IL = 0: IIS(LH)
VIN=5 V, VIS = 0, VOUT = 0 (short circuit): IIS(SH)12 )

8)

9)

10)

11)
12)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 9).
This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by
a factor of two by matching the value of kILIS for every single device.
In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is
High. See figure 2b, page 11.
Valid if Vbb(u rst) was exceeded before.
not subject to production test, specified by design

Semiconductor Group

Page 5

2003-Oct-01

BTS 640 S2
Parameter and Conditions

Symbol

at Tj = 25 C, Vbb = 12 V unless otherwise specified

Current sense settling time to IIS static10% after

positive input slope13) , IL = 0
5 A,

Values
min
typ
max

Unit

tson(IS)

--

--

300

Current sense settling time to 10% of IIS static after

negative input slope13) , IL = 5
0A,
tsoff(IS)

--

30

100

--

10

--

15

40

3,0

4,5

7,0

-1.5
--

--0.5

3.5
---

V
V
V

--

50

20

50

90

td(ST OL3)

--

400

--

tdon(ST)

--

13

--

tdoff(ST)

--

--

5.4
----

6.1
----

6.9
0.4
0.7
2

Tj= -40...+150C

Tj= -40...+150C

Current sense rise time (60% to 90%) after change

of load current13) , IL = 2.5
5A
tslc(IS)
Open load detection voltage14) (off-condition)
VOUT(OL)
Tj=-40..150C:

Internal output pull down

RO

(pin 6 to 2), VOUT=5 V, Tj=-40..150C

Input and Status Feedback15)

Input resistance

RI

see circuit page 8

Input turn-on threshold voltage

Tj =-40..+150C: VIN(T+)
Input turn-off threshold voltage
Tj =-40..+150C: VIN(T-)
Input threshold hysteresis
VIN(T)
Off state input current (pin 3), VIN = 0.4 V
Tj =-40..+150C IIN(off)
On state input current (pin 3), VIN = 5 V
Tj =-40..+150C

IIN(on)

Delay time for status with open load

after Input neg. slope (see diagram page 13)

Status delay after positive input slope13)

Tj=-40 ... +150C:

Status delay after negative input

slope13)
Tj=-40 ... +150C:

Status output (open drain)

Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high)
ST low voltage
Tj =-40...+25C, IST = +1.6 mA: VST(low)
Tj = +150C, IST = +1.6 mA:
Status leakage current, VST = 5 V,
Tj=25 ... +150C: IST(high)

13)

not subject to production test, specified by design

External pull up resistor required for open load detection in off state.
15) If a ground resistor R
GND is used, add the voltage drop across this resistor.
14)

Semiconductor Group

Page 6

2003-Oct-01

BTS 640 S2
Truth Table

Normal
operation
Currentlimitation
Short circuit to
GND
Overtemperature
Short circuit to
Vbb
Open load
Undervoltage
Overvoltage
Negative output
voltage clamp
L = "Low" Level
H = "High" Level

16)
17)
18)
19)
20)

Input

Output

Status

Current
Sense

level

level

level

L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L

L
H
L
H
L
L16)
L
L
H
H

H
L
H
H
H
H
H
H
L17)
L
H (L20))
L
H
L
H
L
H

IIS
0
nominal
0
0
0
0
0
0
0
<nominal 18)
0
0
0
0
0
0
0

L19)
H
L
L
L
L
L

X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)

The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is
zero
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
Power Transistor off, high impedance
with external resistor between pin 4 and pin 6&7

Semiconductor Group

Page 7

2003-Oct-01

BTS 640 S2
Status output

Terms

+5V
V

bb

I IN

I ST
I IS

V
IN

Ibb

VON

Vbb

IN

OUT

R ST(ON)

IL

ST

PROFET

ST

OUT

IS
VST
5
V
IS

GND

2
R

GND

OUT

I
GND

GND

ESDZD

ESD-Zener diode: 6.1 V typ., max 5 mA;

RST(ON) < 440 at 1.6 mA, The use of ESD zener
diodes as voltage clamp at DC conditions is not
recommended.

Input circuit (ESD protection)

R
IN

Current sense output

V
ESD-ZD I

IS
I

IS

I
IS

GND

ESD-ZD

IS

GND

The use of ESD zener diodes as voltage clamp at DC

conditions is not recommended.

ESD-Zener diode: 6.1 V typ., max 14 mA;

RIS = 1 k nominal

Inductive and overvoltage output clamp

+ V bb
V

VON

OUT
GND

PROFET

VON clamped to 47 V typ.

Semiconductor Group

Page 8

2003-Oct-01

BTS 640 S2
Overvoltage protection of logic part

GND disconnect

+ 5V
+ V bb

R ST

RI

IN

V
bb

4
3

Z2

ST

Logic

IS

RV
V

R IS

Ibb

IN

Vbb

ST

PROFET

OUT

OUT
IS

GND
2

Z1

V V V
IN ST IS

V
GND

GND

R GND

Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .

Signal GND

Due to VGND >0, no VST = low signal available.

VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 4 k typ,

RGND= 150 , RST= 15 k, RIS= 1 k, RV= 15 k,

GND disconnect with GND pull up

4

Reverse battery protection

+ 5V

IN

Vbb
OUT

- Vbb
R ST

RI

IN

ST

PROFET
OUT

IS

Logic

GND
2

ST

VZ1

IS

OUT

V
bb

Power
Inverse
Diode

RV
R IS

V
GND

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.

GND

RL

RGND

Vbb disconnect with energized inductive

load

Power GND

Signal GND

V VSTV
IN
IS

The load RL is inverse on, temperature protection is

not active
RGND= 150 , RI= 4 k typ, RST 500 , RIS 200 ,
RV 500 ,

4
high

3
1
5

Open-load detection

ST

PROFET

OUT

OUT
IS

GND

V
bb

bb

EXT

Vbb

OFF-state diagnostic condition: VOUT > 3 V typ.; IN low

V

IN

Normal load current can be handled by the PROFET

itself.

OFF
Out
ST

Logic

OUT

Signal GND

Semiconductor Group

Page 9

2003-Oct-01

BTS 640 S2
Vbb disconnect with charged external
inductive load
4
high

3
1
5

IN

Vbb

ST

PROFET

OUT

OUT
IS

6
D

GND
2
RL

V
bb

If other external inductive loads L are connected to the PROFET,

additional elements like D are necessary.

Inductive Load switch-off energy

dissipation
E bb
E AS

4
3
1

Vbb

IN
ST

ELoad

Vbb
OUT
PROFET
OUT

IS

6
7

GND

EL

2
ER

Energy stored in load inductance:

2

EL = 1/2LI L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)iL(t) dt,
with an approximate solution for RL > 0 :
EAS=

IL L
ILRL
(V + |VOUT(CL)|) ln (1+
)
|VOUT(CL)|
2RL bb

Semiconductor Group

Page 10

2003-Oct-01

BTS 640 S2
Figure 2a: Switching a lamp

Timing diagrams
IN

Figure 1a: Switching a resistive load,

change of load current in on-condition:
ST

IN
ST

t don(ST)

t doff(ST)

VOUT

IL

t on

IL

OUT

t off
tslc(IS)

t slc(IS)
I IS
t

Load 1

Load 2

IIS
t son(IS)

t soff(IS)

Figure 2b: Switching a lamp with current limit:

IN

The sense signal is not valid during settling time after turn or
change of load current.

ST

Figure 1b: Vbb turn on:

IN

VOUT

Vbb
IL

IIS
t
I IS

ST
t
proper turn on under all conditions

Semiconductor Group

Page 11

2003-Oct-01

BTS 640 S2
Figure 4a: Overtemperature:
Reset if Tj <Tjt

Figure 2c: Switching an inductive load:

IN

IN
ST
ST
VOUT

IL

IL

I IS

IIS

TJ
t
t

Figure 3a: Short circuit:

shut down by overtempertature, reset by cooling
Figure 5a: Open load: detection in ON-state,
open load occurs in on-state

IN

IL

IN

IL(SCp)
I

ST

L(SCr)

VOUT
I IS
IL

ST

open

normal

t
IIS

Heating up may require several milliseconds, depending on

external conditions
IL(SCp) = 50 A typ. increases with decreasing temperature.

Semiconductor Group

normal

Page 12

2003-Oct-01

BTS 640 S2
Figure 6b: Undervoltage restart of charge pump
Figure 5b: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load

VON(CL)

V on

IN

on-state

off-state

ST

off-state

td(ST OL3)

bb(over)

OUT

bb(u rst)

I
L

open load

bb(o rst)

bb(u cp)

bb(under)

V bb

I IS

charge pump starts at Vbb(ucp) =4.7 V typ.

Figure 7a: Overvoltage:

Figure 6a: Undervoltage:
IN
IN

ST
not defined

ST

Vbb

VON(CL)

bb(over)

bb(o rst)

V
bb
V

bb(under)

Vbb(u cp)
Vbb(u rst)

IL

I
IIS

IS
t

Semiconductor Group

Page 13

2003-Oct-01

BTS 640 S2
Figure 8b: Current sense ratio21:
Figure 8a: Current sense versus load current:
1.3
[mA]
1.2

15000

k ILIS

I IS

1.1
1

10000

0.9
0.8
0.7
0.6

5000

0.5
0.4
0.3
0.2
0.1

IL

0
0

[A] I L

0 1 2 3 4 5 6 7 8 9 10 11 12 13

5 [A] 6

Figure 9a: Output voltage drop versus load current:

VON

[V]

0.2
RON

0.1

VON(NL)
IL

0.0
0

21

Semiconductor Group

Page 14

7 [A] 8

This range for the current sense ratio refers to all

devices. The accuracy of the kILIS can be raised at
least by a factor of two by matching the value of
kILIS for every single device.

2003-Oct-01

BTS 640 S2

Package and Ordering Code

All dimensions in mm

Standard (=staggered): P-TO220-7-11

Straight: P-TO220-7-12

Sales code

BTS640S2

Sales Code

BTS640S2 S

Ordering code

Q67060-S6307-A5

Ordering code

Q67060-S6307-A7

10 0.2

A
4.4

0...0.15

0.25

A C

Ordering code

Q67060-S6307-A6

10 0.2

7x0.6 0.1

0.5 0.1

8 max.
0.1

Typical
All metal surfaces tin plated, except area of cut.

Ordering code

2.8 0.2

1)

We hereby disclaim any and all warranties, including but not limited
to warranties of non-infringement, regarding circuits, descriptions
and charts stated herein.

Information
For further information on technology, delivery terms and conditions
and prices please contact your nearest Infineon Technologies Office
in Germany or our Infineon Technologies Representatives
worldwide (see address list).

6x1.27
A B

Typical
All metal surfaces tin plated, except area of cut.

Infineon Technologies is an approved CECC manufacturer.

2.7 0.3

4.7 0.5

1.3 0.3

8 1)

10.3
9.25 0.2

(15)

0.05

0...0.15

1)

A B C

Terms of delivery and rights to technical change reserved.

2.4

Attention please!
The information herein is given to describe certain components and
shall not be considered as a guarantee of characteristics.

4.4
1.27 0.1
B
0.1

0.25

2.4

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.

BTS640S2 G

1)

0.5 0.1

7x
0.6 0.1
1.27

1)

Sales code

9.8 0.15

0.05

8.4 0.4

SMD: P-TO263-7-2 (tape&reel)

0.25

0...0.15

3.9 0.4

Typical
All metal surfaces tin plated, except area of cut.

8.5

13.4

17 0.3
15.65 0.3

0.5 0.1

4.4
1.27 0.1

110.5

3.7 0.3

2.4

7x
0.6 0.1
1.27

9.25 0.2

2.8 0.2
8.6 0.3

0.05

8.5
3.7 -0.15

1.27 0.1

10.2 0.3

13.4

17 0.3

15.65 0.3

1)

8.5
3.7 -0.15

1)

13 0.5

1)

1)

9.8 0.15

9.25 0.2

10 0.2
9.8 0.15

Warnings
Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact
your nearest Infineon Technologies Office.

Q67060-S6307-A6
Infineon Technologies Components may only be used in life-support
devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system,
or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.

Semiconductor Group

Page 15

2003-Oct-01

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www.datasheetcatalog.com
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