Documente Academic
Documente Profesional
Documente Cultură
No: 04U1-02034
Rev.:2d2
Rev: 2d2
1.Contents
1.Contents
Page
0
2.Revision History
3.Description
2.Revision History:
Ver.
2d0
Date
From
To
11/12/2002
1.
1.
in ADS
2d1
11/30/2002
Nf in ADS
2.
2.
3.
4.
3.
temperature coefficient in
4.
5.
1.
model
1.
12/3/2002
2.
2.
RESISTOR model
4.
RESISTOR model
a. Add absolute value of voltage
coefficient
4.
3.
resistor model
2d2
5.
range of MR Capacitor :
range of MR Capacitor :
Remark
(purpose)
original
1. Description
23
40
50
57
63
70
79
86
Appendix
90
2.1 Contents
2.2 Criteria of N/P MOSFET model
2.3 Model Description and Parameters
2.4 Spice parameter list
2.5 Model verification
e.
f.
g.
h.
i.
j.
l
Model validation:
a. Two port data is measured by 50 impedance system.
b. One port is defined as the output port connected to ground.
c. Simulation frequency is from 100MHz to 10GHz.
Rgate
Cgs_ext
Cd
Ldrain
Lsource
S
Djsb_perim
Djdb_perim
Djsb_swg
Djdb_swg
Djsb_area
Djdb_area
Rsub3
Rsub2
Rsub1
Drain
Gate
Bulk
Source
Diffusion Dummy Block
2.643
2.558
1.661
7.196
0.18*7*5
4.102
3.614
1.647
8.419
0.18*9*5
5.813
5.066
1.324
10.660
0.18*13*5
9.011
6.176
0.975
13.770
0.18*17*5
11.670
6.922
1.776
15.540
0.18*21*5
13.460
6.812
2.423
16.100
0.25*7*5
3.385
2.473
1.105
5.878
0.35*7*5
3.863
2.160
1.205
5.908
0.5*7*5
5.209
2.373
1.500
6.596
RMS_S11
(%)
RMS_S22
(%)
RMS_S21
(%)
RMS_S12
(%)
0.18*5*5
1.516
1.022
1.030
2.843
0.18*7*5
1.960
1.468
0.794
3.492
0.18*9*5
2.740
1.996
1.399
3.957
0.18*13*5
3.566
2.987
1.256
6.184
0.18*17*5
4.498
3.931
1.568
8.230
0.18*21*5
5.118
4.517
1.822
10.200
0.25*7*5
2.351
1.295
2.572
3.951
0.35*7*5
3.207
1.524
3.495
4.403
0.5*7*5
5.054
1.813
4.768
8.173
Table 2-3 Scalable formulas for 1.8V NMOSFETs with different Finger Numbers
Parameter
Scaling formula
MOSFET
P_RG ( )
-0.8966+107.7889/NF-364.622/(NF*NF)
P_CD (F)
(0.9008+0.2570*NF+0.2297*(NF*NF))*1E-15
P_CGS (F)
(-2.0811+1.4629*NF+0.009752*(NF*NF))*1E-15
(24.8301+396.8130/NF-1112.3751/(NF*NF))*1E-12
120.783-258.189/NF+939.7544/(NF*NF)
2
(841.3723+1543.5167/NF-4288.7956/(NF*NF))*1E-3
Table 2-4 Scalable formulas for 1.8V NMOSFETs with different Gate Lengths
Parameter
Scaling formula
MOSFET
P_RG ( )
30.0038-10.2118/L_um+0.9998/(L_um*L_um)
P_CD (F)
(16.3846-30.4825*L_um+21.6092*(L_um*L_um))*1E-15
P_CGS (F)
(0.5460+55.9389*L_um-66.3582*(L_um*L_um))*1E-15
5.8E-11
93.1907-8.5107/L_um+1.8334/(L_um*L_um)
2
(475.2494-439.9303*L_um+1066.9945*(L_um*L_um))*1E-9
0.1422+0.0846/L_um+0.0043/(L_um*L_um)
Table 2-5 Scalable formulas for 1.8V PMOSFETs with different Finger Numbers
Parameter
Scaling formula
MOSFET
P_RG ( )
-6.3044+287.3248/NF-996.0158/(NF*NF)
P_CD (F)
(3.0460+2.0138*NF+0.0467*(NF*NF))*1E-15
P_CGS (F)
(0.6197+0.0205*NF+0.0344*(NF*NF))*1E-15
(52.1818+160.1501/NF+649.7715/(NF*NF))*1E-12
70.5835-147.6535/NF-144.7453/(NF*NF)
1
(808.0254+2116.1626/NF-2687.8868/(NF*NF))*1E-3
Table 2-6 Scalable formulas for 1.8V PMOSFETs with different Gate Lengths
Parameter
Scaling formula
MOSFET
P_RG ( )
72.7967-25.7375/L_um+2.8321/(L_um*L_um)
P_CD (F)
(15.8033+4.660*L_um-8.9333*(L_um*L_um))*1E-15
P_CGS (F)
(3.7967-18.190*L_um+36.7333*(L_um*L_um))*1E-15
9E-11
157.35-17.0875/L_um+1.3563/(L_um*L_um)
1
(616.3333-1840*L_um+2266.6670*(L_um*L_um))*1E-9
2.7030-0.6375/L_um+0.1313/(L_um*L_um)
10
Definition
Drain bottom junction diode area
P_Djsb_area
= 0.85 m *5.0 m
11
12
*
Djsb_area 31 30
+ bsim_diode_area
+ AREA = P_DJSB_A
Djsb_perim 31 30
+ bsim_diode_perim
+ AREA = P_DJSB_P
Djsb_swg 31 30
+ bsim_diode_swg
+ AREA = P_DJSB_G
*
RSUB2 12 40 P_RSUB2
RSUB3 31 40 P_RSUB3
RSUB1 40 4 P_RSUB1
*
* --------- Ideal mos transistor ---------------------MAIN 11 21 30 40
+ bsim_mos_transistor
+ L = 1.8E-07
+ W = 5E-6
+ AD = 0
+ AS = 0
+ PD = 0
+ PS = 0
+ M = NF
*
* -------- DIODES & NMOSFET SPICE PARAMETERS -----------*
.MODEL bsim_diode_area D
+ CJ0 = 0.00103 VJ = 0.813 M = 0.443 IS = 1E-06 N = 1
*
.MODEL bsim_diode_perim D
+ CJ0 = 1.34E-10 VJ = 0.88 M = 0.33 IS = 7E-11 N = 1
*
.MODEL bsim_diode_swg D
+ CJ0 = 5E-10 VJ = 0.88 M = 0.33 IS = 7E-11 N = 1
*
.model bsim_mos_transistor NMOS
+ LEVEL = 49 VERSION = 3.2 BINUNIT = 1 MOBMOD = 1
+ CAPMOD = 2 NQSMOD = 0 NOIMOD = 2 TOX = 4.2E-09
+ TOXM = 4.2E-09 XJ = 1.6E-07 NCH = 3.745E+17 RSH = 8
+ NGATE = 1E+23 VTH0 = 0.3075 K1 = 0.4578 K2 = -0.02638
+ K3 = -10.88 K3B = 0.2379 W0 = -8.813E-08 NLX = 4.279E-07
+ DVT0 = 0.4042 DVT1 = 0.3237 DVT2 = -0.8602 DVT0W = 0.383
+ DVT1W = 6E+05 DVT2W = -0.025 LINT = 1.587E-08 WINT = 1.022E-08
+ DWG = -3.396E-09 DWB = 1.346E-09 U0 = 332.1 UA = -1.17E-09
+ UB = 2.407E-18 UC = 4.355E-11 VSAT = 8.1E+04 A0 = 1.93
+ AGS = 0.5072 B0 = 1.486E-06 B1 = 9.064E-06 KETA = 0.01752
+ A1 = 0 A2 = 1 VOFF = -0.1208 NFACTOR = 1.038
+ CIT = -0.001511 CDSC = 0.002175 CDSCD = 0 CDSCB = 0.0008241
+ ETA0 = 0.005504 ETAB = -0.001459 DSUB = 0.001592 PCLM = 0.741
+ PDIBLC1 = 0.005061 PDIBLC2 = 0.006001 PDIBLCB = 0 DROUT = 0.001592
+ PSCBE1 = 4.866E+08 PSCBE2 = 3E-08 PVAG = -0.2958 RDSW = 9.905
13
14
.PARAM P_DJDB_A='(4.25*((7+1)/2))*1E-12'
.PARAM P_DJDB_P='(1.7*((7+1)/2)+5)*1E-6'
.PARAM P_DJDB_G='(5*7)*1E-6'
.PARAM P_DJSB_A='(4.25*((7+1)/2))*1E-12'
.PARAM P_DJSB_P='(1.7*((7+1)/2)+5)*1E-6'
.PARAM P_DJSB_G='(5*7)*1E-6'
.PARAM P_RSUB1='93.1907-8.5107/L_um+1.8334/(L_um*L_um)'
.PARAM P_RSUB2=2
.PARAM P_RSUB3=2
*
* --------- Gate network -----------------------------Cgs_ext 21 30 P_CGS
Rgate 2 21 P_RG
*
* --------- Drain network ----------------------------Ldrain 1 11 P_LD
Lsource 30 3 P_LS
Cd 11 30 P_CD
*
* --------- Substrate network ------------------------* Diodes are for n-type MOS transistors
*
Djdb_area 12 11
+ bsim_diode_area
+ AREA = P_DJDB_A
Djdb_perim 12 11
+ bsim_diode_perim
+ AREA = P_DJDB_P
Djdb_swg 12 11
+ bsim_diode_swg
+ AREA = P_DJDB_G
*
Djsb_area 31 30
+ bsim_diode_area
+ AREA = P_DJSB_A
Djsb_perim 31 30
+ bsim_diode_perim
+ AREA = P_DJSB_P
Djsb_swg 31 30
+ bsim_diode_swg
+ AREA = P_DJSB_G
*
RSUB2 12 40 P_RSUB2
RSUB3 31 40 P_RSUB3
RSUB1 40 4 P_RSUB1
*
* --------- Ideal mos transistor ---------------------MAIN 11 21 30 40
+ bsim_mos_transistor
+L=L
+ W = 5u
+ AD = 0
+ AS = 0
15
+ PD = 0
+ PS = 0
+M=7
*
* -------- DIODES & NMOSFET SPICE PARAMETERS -----------*
.MODEL bsim_diode_area D
+ CJ0 = 0.00103 VJ = 0.813 M = 0.443 IS = 1E-06 N = 1
*
.MODEL bsim_diode_perim D
+ CJ0 = 1.34E-10 VJ = 0.88 M = 0.33 IS = 7E-11 N = 1
*
.MODEL bsim_diode_swg D
+ CJ0 = 5E-10 VJ = 0.88 M = 0.33 IS = 7E-11 N = 1
*
.model bsim_mos_transistor NMOS
+ LEVEL = 49 VERSION = 3.2 BINUNIT = 1 MOBMOD = 1
+ CAPMOD = 2 NQSMOD = 0 NOIMOD = 2 TOX = 4.2E-09
+ TOXM = 4.2E-09 XJ = 1.6E-07 NCH = 3.745E+17 RSH = 8
+ NGATE = 1E+23 VTH0 = 0.3075 K1 = 0.4578 K2 = -0.02638
+ K3 = -10.88 K3B = 0.2379 W0 = -8.813E-08 NLX = P_NLX
+ DVT0 = 0.4042 DVT1 = 0.3237 DVT2 = -0.8602 DVT0W = 0.383
+ DVT1W = 6E+05 DVT2W = -0.025 LINT = 1.587E-08 WINT = 1.022E-08
+ DWG = -3.396E-09 DWB = 1.346E-09 U0 = 332.1 UA = -1.17E-09
+ UB = 2.407E-18 UC = 4.355E-11 VSAT = 8.1E+04 A0 = 1.93
+ AGS = 0.5072 B0 = 1.486E-06 B1 = 9.064E-06 KETA = 0.01752
+ A1 = 0 A2 = 1 VOFF = -0.1208 NFACTOR = 1.038
+ CIT = -0.001511 CDSC = 0.002175 CDSCD = 0 CDSCB = 0.0008241
+ ETA0 = 0.005504 ETAB = -0.001459 DSUB = 0.001592 PCLM = P_PCLM
+ PDIBLC1 = 0.005061 PDIBLC2 = 0.006001 PDIBLCB = 0 DROUT = 0.001592
+ PSCBE1 = 4.866E+08 PSCBE2 = 3E-08 PVAG = -0.2958 RDSW = 9.905
+ PRWG = 1.1 PRWB = 0 WR = 0.97 ALPHA0 = 0
+ ALPHA1 = 0 BETA0 = 30 XPART = 0 CGSO = 1.35E-10
+ CGDO = 1.35E-10 CGBO = 0 CGSL = 2E-11 CGDL = 2E-11
+ CKAPPA = 0.6 CF = 1.533E-10 CLC = 1E-07 CLE = 0.6
+ DLC = 4E-08 DWC = 2E-07 VFBCV = -1 NOFF = 1
+ VOFFCV = 0 ACDE = 1 MOIN = 15 NOIA = 1.31826E+19
+ NOIB = 1.44544E+05 NOIC = -1.24516E-12 EM = 4.1E+07 AF = 1
+ EF = 0.92 KF = 0 LMIN = 2E-07 LMAX = 5E-07
+ WMIN = 5E-06 WMAX = 3.5E-05 XL = -1.05E-08 XW = 0
+ JS = 1E-06 JSW = 7E-11 CJ = 0.00103 MJ = 0.443
+ PB = 0.813 CJSW = 1.34E-10 MJSW = 0.33 TNOM = 25
+ UTE = -1.286 KT1 = -0.2255 KT1L = -4.175E-09 KT2 = -0.02527
+ UA1 = 2.153E-09 UB1 = -2.673E-18 UC1 = -3.832E-11 AT = 1.449E+04
+ PRT = -46.18 XTI = 3 WL = 0 WLN = 1
+ WW = 7.262E-16 WWN = 1 WWL = 0 LL = -1.062E-15
+ LLN = 1 LW = 2.996E-15 LWN = 1 LWL = 0
+ LLC = -6.64E-15 LWC = 0 LWLC = 0 WLC = 0
+ WWC = 0 WWLC = 0 LVTH0 = -0.0001 WVTH0 = 0.06027
+ PVTH0 = 0 LNLX = -2.854E-08 WNLX = 0 PNLX = 0
+ LNFACTOR = 0.032 WUA = -1.88E-11 WU0 = 0.54 PUB = 3.8E-20
+ PW0 = 1.3E-09 LUA = 1.5E-11 LUB = 9.76E-20 WRDSW = 0
+ WETA0 = 0 WETAB = 0 LETA0 = 0.001574 LETAB = 0
16
17
+ AREA = P_DJDB_G
*
Djsb_area 30 31
+ bsim_diode_area
+ AREA = P_DJSB_A
Djsb_perim 30 31
+ bsim_diode_perim
+ AREA = P_DJSB_P
Djsb_swg 30 31
+ bsim_diode_swg
+ AREA = P_DJSB_G
*
RSUB2 12 40 P_RSUB2
RSUB3 31 40 P_RSUB3
RSUB1 40 4 P_RSUB1
*
* --------- Ideal mos transistor ---------------------MAIN 11 21 30 40
+ bsim_mos_transistor
+ L = 1.8E-07
+ W = 5E-6
+ AD = 0
+ AS = 0
+ PD = 0
+ PS = 0
+ M = NF
*
* -------- DIODES & PMOSFET SPICE PARAMETERS -----------*
.MODEL bsim_diode_area D
+ CJ0 = 0.00114 VJ = 0.762 M = 0.395 IS = 3E-06 N = 1
*
.MODEL bsim_diode_perim D
+ CJ0 = 1.74E-10 VJ = 0.665 M = 0.324 IS = 4.12E-11 N = 1
*
.MODEL bsim_diode_swg D
+ CJ0 = 4.2E-10 VJ = 0.665 M = 0.324 IS = 4.12E-11 N = 1
*
.model bsim_mos_transistor PMOS
+ LEVEL = 49 MOBMOD = 3 VERSION = 3.2 CAPMOD = 2
+ BINUNIT = 1 NQSMOD = 0 NOIMOD = 2 TOX = 4.2E-09
+ TOXM = 4.2E-09 XJ = 1E-07 NCH = 6.131E+17 NGATE = 1E+23
+ VTH0 = -0.4325 K1 = 0.5704 K2 = 0.006973 K3 = -2.833
+ K3B = 1.326 W0 = -1.943E-07 NLX = 2.56E-07 DVT0 = 0.4885
+ DVT1 = 0.09578 DVT2 = 0.1287 DVT0W = -0.1261 DVT1W = 2.479E+04
+ DVT2W = 0.6915 LINT = -1.041E-08 WINT = -1.525E-07 DWG = -1.151E-07
+ DWB = -1.039E-07 U0 = 90 UA = 1.49E-09 UB = 4.646E-19
+ UC = -0.09587 VSAT = 4.75E+04 A0 = 1.35 AGS = 0.3818
+ B0 = -3.088E-07 B1 = 0 KETA = 0.01044 A1 = 0
+ A2 = 1 VOFF = -0.1073 NFACTOR = 0.984 CIT = -0.001067
+ CDSC = 0.0007578 CDSCD = 0 CDSCB = 0.0001 ETA0 = 1.071
+ ETAB = -0.9291 DSUB = 1.919 PCLM = 0.553 PDIBLC1 = 0.007
+ PDIBLC2 = 0.008005 PDIBLCB = 0 DROUT = 0.157 PSCBE1 = 4.866E+08
+ PSCBE2 = 2.8E-07 PVAG = -0.888 RDSW = 202.1 PRWG = 1.2
+ PRWB = 0 WR = P_WR ALPHA0 = 0 ALPHA1 = 0
+ BETA0 = 30 CGDO = 1.254E-10 CGBO = 0 CGSO = 1.254E-10
+ XPART = 0 CF = 1.533E-10 DLC = 7.01E-08 CGSL = 2E-11
+ CGDL = 2E-11 CKAPPA = 0.6 CLC = 1E-07 CLE = 0.6
+ DWC = 2.3E-07 VFBCV = -1 NOFF = 1 VOFFCV = 0
+ ACDE = 1 MOIN = 15 NOIA = 4.6E+17 NOIB = 2.5E+03
+ NOIC = 2.6126E-11 EM = 4.1E+07 AF = 1 EF = 1.1388
+ KF = 0 LMIN = 1.8E-07 LMAX = 1.805E-07 WMIN = 5E-06
18
Cgs_ext 21 30 P_CGS
Rgate 2 21 P_RG
*
* --------- Drain network ----------------------------Ldrain 1 11 P_LD
Lsource 30 3 P_LS
Cd 11 30 P_CD
*
* --------- Substrate network ------------------------* Diodes are for p-type MOS transistors
*
Djdb_area 11 12
+ bsim_diode_area
+ AREA = P_DJDB_A
Djdb_perim 11 12
+ bsim_diode_perim
+ AREA = P_DJDB_P
Djdb_swg 11 12
+ bsim_diode_swg
+ AREA = P_DJDB_G
*
Djsb_area 30 31
+ bsim_diode_area
+ AREA = P_DJSB_A
Djsb_perim 30 31
+ bsim_diode_perim
+ AREA = P_DJSB_P
Djsb_swg 30 31
+ bsim_diode_swg
+ AREA = P_DJSB_G
*
RSUB2 12 40 P_RSUB2
RSUB3 31 40 P_RSUB3
RSUB1 40 4 P_RSUB1
*
* --------- Ideal mos transistor ---------------------MAIN 11 21 30 40
+ bsim_mos_transistor
+L=L
+ W = 5u
+ AD = 0
+ AS = 0
+ PD = 0
+ PS = 0
+M=7
*
* -------- DIODES & PMOSFET SPICE PARAMETERS -----------*
.MODEL bsim_diode_area D
+ CJ0 = 0.00114 VJ = 0.762 M = 0.395 IS = 3E-06 N = 1
*
.MODEL bsim_diode_perim D
+ CJ0 = 1.74E-10 VJ = 0.665 M = 0.324 IS = 4.12E-11 N = 1
20
*
.MODEL bsim_diode_swg D
+ CJ0 = 4.2E-10 VJ = 0.665 M = 0.324 IS = 4.12E-11 N = 1
*
.model bsim_mos_transistor PMOS
+ LEVEL = 49 MOBMOD = 3 VERSION = 3.2 CAPMOD = 2
+ BINUNIT = 1 NQSMOD = 0 NOIMOD = 2 TOX = 4.2E-09
+ TOXM = 4.2E-09 XJ = 1E-07 NCH = 6.131E+17 NGATE = 1E+23
+ VTH0 = -0.4325 K1 = 0.5704 K2 = 0.006973 K3 = -2.833
+ K3B = 1.326 W0 = -1.943E-07 NLX = P_NLX DVT0 = 0.4885
+ DVT1 = 0.07578 DVT2 = 0.1287 DVT0W = -0.1261 DVT1W = 2.479E+04
+ DVT2W = 0.6915 LINT = -1.041E-08 WINT = -1.525E-07 DWG = -1.151E-07
+ DWB = -1.039E-07 U0 = 113 UA = 1.54E-09 UB = 6.46E-20
+ UC = -0.09587 VSAT = 4.55E+04 A0 = 1.35 AGS = 0.3818
+ B0 = -3.088E-07 B1 = 0 KETA = 0.01044 A1 = 0
+ A2 = 1 VOFF = -0.1073 NFACTOR = 0.984 CIT = -0.001067
+ CDSC = 0.0007578 CDSCD = 0 CDSCB = 0.0001 ETA0 = 1.071
+ ETAB = -0.9291 DSUB = 1.919 PCLM = P_PCLM PDIBLC1 = 0.005
+ PDIBLC2 = 0.01401 PDIBLCB = 0 DROUT = 1.457 PSCBE1 = 4.866E+08
+ PSCBE2 = 2.8E-07 PVAG = 1.162 RDSW = 202.1 PRWG = 0
+ PRWB = 0 WR = 1 ALPHA0 = 0 ALPHA1 = 0
+ BETA0 = 30 CGDO = 1.254E-10 CGBO = 0 CGSO = 1.254E-10
+ XPART = 0 CF = 1.533E-10 DLC = 7.01E-08 CGSL = 2E-11
+ CGDL = 2E-11 CKAPPA = 0.6 CLC = 1E-07 CLE = 0.6
+ DWC = 0 VFBCV = -1 NOFF = 1 VOFFCV = 0
+ ACDE = 1 MOIN = 15 NOIA = 4.6E+17 NOIB = 2.5E+03
+ NOIC = 2.6126E-11 EM = 4.1E+07 AF = 1 EF = 1.1388
+ KF = 0 LMIN = 2E-07 LMAX = 5E-07 WMIN = 5E-06
+ WMAX = 3.5E-05 XL = -2E-09 XW = 0 JS = 3E-06
+ JSW = 4.12E-11 CJ = 0.00114 MJ = 0.395 PB = 0.762
+ CJSW = 1.74E-10 MJSW = 0.324 TNOM = 25 UTE = -0.4484
+ KT1 = -0.2194 KT1L = -8.204E-09 KT2 = -0.009487 UA1 = 4.571E-09
+ UB1 = -6.026E-18 UC1 = -0.0985 AT = 1.203E+04 PRT = 0
+ XTI = 3 WW = 1.236E-14 LW = -2.873E-16 LL = 6.635E-15
+ WL = 0 WLN = 1 WWN = 1 WWL = 0
+ LLN = 1 LWN = 1 LWL = 0 LLC = -1.31E-14
+ LWC = 0 LWLC = 0 WLC = 0 WWC = 0
+ WWLC = 0 LVTH0 = 0.0057 WVTH0 = -0.0148 LU0 = -3
+ LNFACTOR = 0.03 PVTH0 = 0.0031 LNLX = -1.584E-08 WRDSW = 10.07
+ WETA0 = 0 WETAB = 0 WPCLM = 0 WUA = 2.7E-09
+ LUA = -2.37E-10 PUA = 5.855E-11 WUB = 0 LUB = 0
+ PUB = 0 WUC = 0 LUC = 0 PUC = 0
+ WVOFF = -0.009816 LVOFF = -0.0009871 PVOFF = -9.833E-05 WA0 = -0.04807
+ LA0 = -0.281 PA0 = 0.08661 WAGS = -0.04177 LAGS = 0.04454
+ PAGS = -0.04076 WKETA = 0 LKETA = -0.012 PKETA = 0
+ WUTE = -0.2682 LUTE = 0 PUTE = 0 WVSAT = -1.42E+04
+ LVSAT = 0 PVSAT = -350 LPDIBLC2 = 0.003012 WAT = -6405
+ WPRT = 216.6 N = 1 PHP = 0.665 CTA = 0.001
+ CTP = 0.000753 PTA = 0.00155 PTP = 0.00124 ACM = 3
+ LDIF = 8E-08 RSH = 8 RD = 0 RSC = 0
+ RDC = 0 HDIF = 2.6E-07 RS = 0
.ENDS
*
21
22
3.1 Contents
3.2 Criteria of N/P MOSFET model
3.3 Model Description and Parameters
3.4 Spice parameter list
3.5 Model verification
23
24
Model validation:
a. Two port data is measured by 50 impedance system.
b. One port is defined as the output port connected to ground.
c.
25
Rgate
Cgs_ext
Cd
Ldrain
Lsource
S
Djsb_perim
Djdb_perim
Djsb_swg
Djdb_swg
Djsb_area
Djdb_area
Rsub3
Rsub2
Rsub1
26
Drain
Gate
Bulk
Source
Diffusion Dummy Block
27
0.645
1.594
2.882
2.002
0.34*7*5
0.751
1.635
2.925
2.419
0.34*9*5
1.801
2.261
3.993
3.974
0.34*13*5
1.432
3.546
3.582
4.111
0.34*17*5
2.037
5.033
4.451
5.694
0.34*21*5
2.291
5.437
4.068
6.404
0.34*7*5
0.973
3.096
2.283
2.432
0.5*7*5
1.836
1.91
5.379
3.029
0.8*7*5
3.973
3.837
8.06
8.422
RMS_S11(%)
RMS_S22(%)
RMS_S21(%)
RMS_S12(%)
0.34*5*5
1.799
1.311
1.35
2.284
0.34*7*5
2.392
2.131
1.209
2.307
0.34*9*5
2.895
3.700
1.578
4.33
0.34*13*5
4.086
5.824
1.844
4.067
0.34*17*5
4.973
5.885
2.306
5.500
0.34*21*5
5.655
7.909
2.922
8.053
0.34*7*5
3.002
5.031
1.466
2.227
0.5*7*5
3.539
4.884
2.548
2.785
0.8*7*5
4.962
4.478
4.723
3.916
28
Scaling formula
MOSFET
P_RG ( )
-7.0913+216.04/NF-411.06/(NF*NF)
P_CD (F)
(0.306+0.1838*NF+0.0049*(NF*NF))*1E-15
P_RSUB1 ( )
70.9+224.53/NF-396.9/(NF*NF)
Table 3-4 Scalable formulas for 3.3V NMOSFETs with different Gate Lengths
Parameter
Scaling formula
MOSFET
P_RG ( )
33.476-13.353/L_um+2.0572/(L_um*L_um)
P_CD (F)
(20.609-34.728*L_um+19.022*(L_um*L_um))*1E-15
Table 3-5 Scalable formulas for 3.3V PMOSFETs with different Finger Numbers
Parameter
Scaling formula
MOSFET
P_RG ( )
2.9978+41.357/NF-36.796/(NF*NF)
P_CD (F)
(9.4819-0.5777*NF+0.0508*(NF*NF))*1E-15
P_RSUB1 ( )
20.979+437.18/NF-705.05/(NF*NF)
29
Table 3-6 Scalable formulas for 3.3V PMOSFETs with different Gate Lengths
Parameter
Scaling formula
MOSFET
P_RG ( )
192.37-151.74/L_um+30.28/(L_um*L_um)
P_CD (F)
(33.148-64.815*L_um+37.037*(L_um*L_um))*1E-15
Definition
Drain bottom junction diode area
P_Djsb_area
= 0.85 m *5.0 m
30
31
+ AREA = P_DJSB_P
Djsb_swg 31 30
+ bsim_diode_swg
+ AREA = P_DJSB_G
*
*
Rsub2 12 40 P_RSUB2
Rsub3 31 40 P_RSUB3
Rsub1 40 4 P_RSUB1
*
* --------- Ideal mos transistor ---------------------MAIN 11 21 30 40
+ bsim_mos_transistor
+ L = 3.4E-07
+ W = 5E-06
+ AD = 0
+ AS = 0
+ PD = 0
+ PS = 0
+ M = NF
*
.MODEL bsim_diode_area D
+ CJ0 = 0.0007673 VJ = 0.7131 M = 0.3299 IS = 1E-05 N = 1
*
.MODEL bsim_diode_perim D
+ CJ0 = 1.089E-10 VJ = 0.7131 M = 0.1037 IS = 5.1E-11 N = 1
*
.MODEL bsim_diode_swg D
+ CJ0 = 2.9E-10 VJ = 0.7131 M = 0.1037 IS = 5.1E-11 N = 1
*
.model bsim_mos_transistor NMOS
+ LEVEL = 49 VERSION = 3.2 MOBMOD = 1 BINUNIT = 2
+ CAPMOD = 3 NQSMOD = 0 TOX = 7E-09 XJ = 2.5E-07
+ NCH = 1.7E+17 RSH = 8 LINT = 0 WINT = 0
+ DWG = 3.553E-15 DWB = 6.2E-09 VTH0 = 0.5924 K1 = 0.7138
+ K2 = -0.02583 K3 = 62 DVT0 = 4.75 DVT1 = 0.634
+ DVT2 = -0.1139 DVT0W = 0.15 DVT1W = 5.95E+05 DVT2W = 0
+ NLX = 1.372E-07 W0 = 5.68E-06 K3B = 32 VSAT = 1.052E+05
+ UA = -4.855E-10 UB = 2.265E-18 UC = 5.518E-11 U0 = 0.03913
+ A0 = 0.651 KETA = 0.005 A1 = 0.1 A2 = 0.99 AGS = 0.06
+ B0 = 2E-08 B1 = 9E-07 VOFF = -0.1361 NFACTOR = 1
+ CIT = 0 CDSC = 0.00024 CDSCB = 0 CDSCD = 0
+ ETA0 = 0.02 ETAB = -0.0015 DSUB = 0.201 PCLM = 1.21
+ PDIBLC1 = 0.025 PDIBLC2 = 0.002 PDIBLCB = 0 DROUT = 0.46
+ PSCBE1 = 4.04E+08 PSCBE2 = 1E-05 PVAG = 0.2 DELTA = 0.02
+ RDSW = 495.9 PRWB = 0.05715 PRWG = 0.088 WR = 1.01
+ ALPHA0 = 0 ALPHA1 = 0 BETA0 = 30 CGDO = 2.7E-10
+ CGSO = 2.7E-10 CGBO = 0 XPART = 0 CF = 1.392E-10
+ XL = 2.5E-08 XW = 0 CJ = 0.0007673 MJ = 0.3299
+ PB = 0.7131 CJSW = 1.089E-10 MJSW = 0.1037 JS = 1E-05
+ JSW = 5.1E-11 TNOM = 27 KT1 = -0.3166 KT2 = -0.04461
+ AT = 500 UTE = -1.601 UA1 = 4.203E-11 UB1 = 3.8E-19
32
33
+ bsim_diode_area
+ AREA = P_DJDB_A
Djdb_perim 12 11
+ bsim_diode_perim
+ AREA = P_DJDB_P
Djdb_swg 12 11
+ bsim_diode_swg
+ AREA = P_DJDB_G
*
Djsb_area 31 30
+ bsim_diode_area
+ AREA = P_DJSB_A
Djsb_perim 31 30
+ bsim_diode_perim
+ AREA = P_DJSB_P
Djsb_swg 31 30
+ bsim_diode_swg
+ AREA = P_DJSB_G
*
Rsub2 12 40 P_RSUB2
Rsub3 31 40 P_RSUB3
Rsub1 40 4 P_RSUB1
*
* --------- Ideal mos transistor ---------------------MAIN 11 21 30 40
+ bsim_mos_transistor
+L=L
+ W = 5u
+ AD = 0
+ AS = 0
+ PD = 0
+ PS = 0
+M=7
*
* -------- DIODES & NMOSFET SPICE PARAMETERS -----------*
.MODEL bsim_diode_area D
+ CJ0 = 0.0007673 VJ = 0.7131 M = 0.3299 IS = 1E-05 N = 1
*
.MODEL bsim_diode_perim D
+ CJ0 = 1.089E-10 VJ = 0.7131 M = 0.1037 IS = 5.1E-11 N = 1
*
.MODEL bsim_diode_swg D
+ CJ0 = 2.9E-10 VJ = 0.7131 M = 0.1037 IS = 5.1E-11 N = 1
*
.MODEL bsim_mos_transistor NMOS
+ LEVEL = 49 VERSION = 3.2 MOBMOD = 1 BINUNIT = 2
+ CAPMOD = 3 NQSMOD = 0 TOX = 7E-09 XJ = 2.5E-07
+ NCH = 1.7E+17 RSH = 8 LINT = 0 WINT = 0 DWG = 3.553E-15
+ DWB = 6.2E-09 VTH0 = 0.6124 K1 = 0.7138 K2 = -0.02583 K3 = 62
+ DVT0 = 4.75 DVT1 = 0.634 DVT2 = -0.1139 DVT0W = 0.15
+ DVT1W = 5.95E+05 DVT2W = 0 NLX = 1.372E-07 W0 = 5.68E-06
+ K3B = 32 VSAT = 1.052E+05 UA = -4.855E-10 UB = 2.065E-18
34
35
Rgate 2 21 P_RG
*
* --------- Drain network ----------------------------Ldrain 1 11 P_LD
Lsource 30 3 P_LS
Cd 11 30 P_CD
*
* --------- Substrate network ------------------------* Diodes are for p-type MOS transistors
*
Djdb_area 11 12
+ bsim_diode_area
+ AREA = P_DJDB_A
Djdb_perim 11 12
+ bsim_diode_perim
+ AREA = P_DJDB_P
Djdb_swg 11 12
+ bsim_diode_swg
+ AREA = P_DJDB_G
*
Djsb_area 30 31
+ bsim_diode_area
+ AREA = P_DJSB_A
Djsb_perim 30 31
+ bsim_diode_perim
+ AREA = P_DJSB_P
Djsb_swg 30 31
+ bsim_diode_swg
+ AREA = P_DJSB_G
*
Rsub2 12 40 P_RSUB2
Rsub3 31 40 P_RSUB3
Rsub1 40 4 P_RSUB1
*
* --------- Ideal mos transistor ---------------------MAIN 11 21 30 40
+ bsim_mos_transistor
+ L = 3.4E-7
+ W = 5E-6
+ AD = 0
+ AS = 0
+ PD = 0
+ PS = 0
+ M = NF
*
.MODEL bsim_diode_area D
+ CJ0 = 0.0012 MJSW = 0.4097 VJ = 0.7618 IS = 9E-05 N = 1
*
.MODEL bsim_diode_perim D
+ CJ0 = 2.243E-10 VJ = 0.7618 MJSW = 0.4745 IS = 4.9E-12 N = 1
*
.MODEL bsim_diode_swg D
+ CJ0 = 4.2E-10 VJ = 0.7618 MJSW = 0.4745 IS = 4.9E-12 N = 1
*
.model bsim_mos_transistor PMOS
+ LEVEL = 49 VERSION = 3.2 MOBMOD = 1 CAPMOD = 3
+ NQSMOD = 0 TOX = 7E-09 XJ = 1.8E-07 NCH = 4.31E+17
+ RSH = 8 LINT = 2.24E-08 WINT = 3.361E-08 DWG = -1.437E-08
+ DWB = 5.984E-09 VTH0 = -0.7104 K1 = 0.7667 K2 = 0.05429
+ K3 = 2.089 DVT0 = 7.395 DVT1 = 0.6635 DVT2 = 0.007805
+ DVT0W = 1.797 DVT1W = 2.876E+06 DVT2W = 0.1026 NLX = 5E-08
+ W0 = 2.125E-07 K3B = 1.003 VSAT = 9.09E+04 UA = -8E-13
36
Cd 11 30 P_CD
*
* --------- Substrate network ------------------------* Diodes are for p-type MOS transistors
*
Djdb_area 11 12
+ bsim_diode_area
+ AREA = P_DJDB_A
Djdb_perim 11 12
+ bsim_diode_perim
+ AREA = P_DJDB_P
Djdb_swg 11 12
+ bsim_diode_swg
+ AREA = P_DJDB_G
*
Djsb_area 30 31
+ bsim_diode_area
+ AREA = P_DJSB_A
Djsb_perim 30 31
+ bsim_diode_perim
+ AREA = P_DJSB_P
Djsb_swg 30 31
+ bsim_diode_swg
+ AREA = P_DJSB_G
*
Rsub2 12 40 P_RSUB2
Rsub3 31 40 P_RSUB3
Rsub1 40 4 P_RSUB1
*
* --------- Ideal mos transistor ---------------------MAIN 11 21 30 40
+ bsim_mos_transistor
+L=L
+ W = 5u
+ AD = 0
+ AS = 0
+ PD = 0
+ PS = 0
+M=7
*
* -------- DIODES & PMOSFET SPICE PARAMETERS -----------*
.MODEL bsim_diode_area D
+ CJ0 = 0.0012 MJSW = 0.4097 VJ = 0.7618 IS = 9E-05 N = 1
*
.MODEL bsim_diode_perim D
+ CJ0 = 2.243E-10 VJ = 0.7618 MJSW = 0.4745 IS = 4.9E-12 N = 1
*
.MODEL bsim_diode_swg D
+ CJ0 = 4.2E-10 VJ = 0.7618 MJSW = 0.4745 IS = 4.9E-12 N = 1
*
.model bsim_mos_transistor PMOS
+ LEVEL = 49 VERSION = 3.2 MOBMOD = 1 CAPMOD = 3 NQSMOD = 0
+ TOX = 7E-09 XJ = 1.8E-07 NCH = 4.31E+17 RSH = 8
+ LINT = 2.24E-08 WINT = 3.361E-08 DWG = -1.437E-08 DWB = 5.984E-09
+ VTH0 = -0.7104 K1 = 0.7667 K2 = 0.05429 K3 = 2.089
+ DVT0 = 7.395 DVT1 = 0.6635 DVT2 = 0.007805 DVT0W = 1.797
+ DVT1W = 2.876E+06 DVT2W = 0.1026 NLX = 5E-08 W0 = 2.125E-07
+ K3B = 1.003 VSAT = 1.209E+05 UA = -8E-13 UB = 1.82E-18
+ UC = -3.65E-11 U0 = 0.008064 A0 = 1.2 KETA = -0.01035
+ A1 = 0.01 A2 = 0.99 AGS = 0.3138 B0 = 0
+ B1 = 1E-06 VOFF = -0.1239 NFACTOR = 0.4964 CIT = 0.0005334
38
39
4.1 Contents
4.2 Criteria of Inductor Model
4.3 Model Description and Parameters
4.4 SPICE parameter list
4.5 Model verification
40
41
2
R
L
Cox
Cox
Csub
Rsub
999
Csub
Rsub
999
999
999
42
D+W+S
M5
Port2
M6
Port1
S
GND
N=3.5
43
(um) (um)
Inductance(nH)
Measurement
Quality Factor
Fsr
(GHz)
IND_C1
20
238
1.5
1.294
1.326
10.798
6.5
7.686
10.646
>20
IND_C2
20
136
2.5
1.737
1.826
10.010
4.9
8.093
9.969
16.5
IND_C3
18
136
2.5
1.738
1.816
10.140
4.9
7.941
10.126
17.3
IND_C4
18
168
2.5
2.147
2.307
9.879
3.9
8.488
9.664
14.7
IND_C5
15
195
2.5
2.540
2.768
9.644
3.9
8.432
9.243
13.8
IND_C6
15
126
3.5
3.058
3.416
8.854
3.3
8.369
7.895
12.5
IND_C7
13
141
3.5
3.413
3.832
8.708
3.9
8.129
7.952
12.3
IND_C8
10
163
3.5
4.245
4.896
8.365
3.2
7.874
7.398
11.4
IND_C9
10
180
3.5
4.503
5.298
8.226
3.1
7.927
6.809
10.8
IND_C10
194
3.5
4.986
5.873
8.256
3.3
7.856
7.045
10.8
IND_C11
131
3.5
3.214
3.438
9.364
4.5
7.730
9.354
15.3
IND_C12
138
4.5
5.543
6.589
7.962
3.0
7.723
6.566
10.6
IND_C13
144
4.5
5.815
7.019
7.917
3.0
7.787
6.275
10.2
IND_C14
160
4.5
6.556
8.290
7.909
2.5
7.893
5.496
9.3
IND_C15
164
4.5
6.833
8.440
7.600
3.0
7.395
5.979
9.8
IND_C16
177
4.5
7.488
9.579
7.465
2.7
7.412
5.359
9.2
IND_C17
128
5.5
7.725
9.756
7.600
2.6
7.554
4.015
9.4
IND_C18
144
5.5
8.856
11.886
7.411
2.4
7.411
4.499
8.5
IND_C19
159
5.5
9.989
14.337
7.180
2.3
7.177
3.660
7.7
IND_C20
180
5.5
11.711
18.585
6.961
2.0
6.770
2.606
6.9
IND_C21
210
5.5
14.479
25.501
6.594
1.8
6.087
1.380
5.9
44
Table 4-2 Simulation characteristics and geometry parameters of circular spiral inductors
Device
(um) (um)
Inductance(nH)
Simulation
Quality Factor
Fsr
(GHz)
IND_C1
20
238
1.5
1.230
1.288
11.461
6.5
6.970
11.087
>20
IND_C2
20
136
2.5
1.720
1.860
10.288
4.5
8.268
10.132
15.8
IND_C3
18
136
2.5
1.694
1.814
10.307
4.8
7.914
10.264
17
IND_C4
18
168
2.5
2.159
2.379
10.025
3.9
8.772
9.422
14.3
IND_C5
15
195
2.5
2.563
2.846
9.764
3.7
8.715
8.995
13.8
IND_C6
15
126
3.5
3.145
3.610
9.393
2.9
9.177
7.359
12
IND_C7
13
141
3.5
3.489
4.013
9.184
2.9
8.967
7.172
12
IND_C8
10
163
3.5
4.073
4.693
8.832
3.1
8.489
7.131
12
IND_C9
10
180
3.5
4.600
5.462
8.650
2.8
8.518
6.377
10.9
IND_C10
194
3.5
5.068
6.005
8.347
3.1
8.023
6.608
11
IND_C11
131
3.5
3.114
3.371
9.212
4.5
7.335
9.050
16.1
IND_C12
138
4.5
5.646
6.793
8.263
2.6
8.215
5.642
10.5
IND_C13
144
4.5
5.937
7.253
8.193
2.5
8.177
5.337
10.1
IND_C14
160
4.5
6.743
8.618
8.014
2.3
8.005
4.565
9.2
IND_C15
164
4.5
6.913
8.522
7.715
2.8
7.554
5.555
10
IND_C16
177
4.5
7.618
9.738
7.539
2.7
7.481
4.959
9.3
IND_C17
128
5.5
7.890
10.014
7.633
2.4
7.633
4.546
9.4
IND_C18
144
5.5
9.084
12.254
7.423
2.2
7.388
3.732
8.4
IND_C19
159
5.5
10.279
14.814
7.232
2.1
7.088
3.035
7.7
IND_C20
180
5.5
12.089
19.351
6.983
1.9
6.596
2.156
6.8
IND_C21
210
5.5
14.993
27.144
6.658
1.6
5.831
1.061
5.9
45
RMS_S11(%)
RMS_S12(%)
RMS_S21(%)
RMS_S22(%)
IND_C1
7.614
1.652
1.753
8.03
IND_C2
8.1
2.635
2.615
8.3
IND_C3
7.141
1.61
1.61
7.328
IND_C4
6.49
2.705
2.688
6.79
IND_C5
4.73
1.75
1.78
4.96
IND_C6
5.81
4.25
4.23
6.3
IND_C7
4.46
3.16
3.15
4.75
IND_C8
3.095
1.802
1.742
3.186
IND_C9
3.46
2.53
2.47
3.39
IND_C10
1.8
2.08
1.75
IND_C11
2.368
1.124
1.107
2.36
IND_C12
1.937
1.916
1.842
2.088
IND_C13
1.82
2.14
2.07
1.93
IND_C14
1.609
2.86
2.79
1.745
IND_C15
1.245
2.895
2.831
1.155
IND_C16
1.164
3.566
3.509
1.11
IND_C17
1.075
2.89
2.83
1.3
IND_C18
1.593
4.314
4.264
1.455
IND_C19
1.377
5.58
5.54
1.218
IND_C20
1.037
7.43
7.396
1.028
IND_C21
1.37
8.16
8.27
0.902
46
Scaling formula
L_spiral 0.5*(N*3.14159*(2*(2*D_um+W_um)+(2*N-1)*(W_um+S_um)))+(N+0.5)*(W_um+S_um)
d_plus
(W_um+S_um)*(3*N-2*(N-0.5)-1)*(N+0.5)/(3*(2*N-N-0.5))
p_lsef
log(2*L_spiral/(W_um+T_um))-0.2
p_M_neg 0.4418*N
p_M_d1 log(sqrt(1+(L_spiral/(4*N*d_plus))*(L_spiral/(4*N*d_plus)))+L_spiral/(4*N*d_plus))
p_M_d2 sqrt(1+(4*N*d_plus/L_spiral)*(4*N*d_plus/L_spiral))-4*N*d_plus/L_spiral
p_ls
(2*L_spiral*(p_lsef-p_M_neg+0.97*(N-1)*(p_M_d1-p_M_d2))+2923-3700*n+507*n*n)*1e-
p_rs
1+0.02*(L_spiral/W_um)+N*(0.34-0.0002273*L_spiral)
p_cp
(0.0402*(N-0.5)*W_um*W_um)*1e-15
p_cox
(0.0019725*(2*L_spiral*W_um+3.14159*W_um*W_um))*1e-15
p_csub1 ((0.24+0.098*N)*D_um)*1e-15
p_csub2 ((0.2205+0.055*N)*D_um)*1e-15
p_rsub1 530+49153/(D_um*N)
p_rsub2 680+55465/(D_um*N)'
47
48
49
5.1 Contents
5.2 Criteria of MIS Varactor Model
5.3 Model Description and Parameters
5.4 SPICE parameter list
5.5 Model verification
50
Model validation:
a. Two port data is measured by 50 impedance system.
b. One port is defined as the output port connected to ground.
c. Simulation frequency is from 100MHz to 10GHz
51
Rdiso
Lg
Rg
Rb
Lb
Bulk
Gate
Cbox
Rsiso
D_n_su
Rsu
Csu
999
999
999
999
52
Gate
Bulk
N+
N+
N+
N+
N-Well
SUB
Well
Gate
Well
53
RMS_S11 (%)
RMS_S21 (%)
RMS_S22 (%)
RMS_S12(%)
MIS_24
2.154
2.716
2.856
1.499
MIS_48
2.574
2.567
2.688
1.551
MIS_72
4.156
2.01
2.222
2.946
MIS_96
3.969
1.847
1.926
2.343
MIS_120
4.436
3.027
3.118
1.907
Scaling formula
p_l
(10.25+0.3854*nf)*1e-12
p_r
(0.9850+0.0038*nf)
p_cp
(-5.8082+0.4911*nf)*1e-15
p_cbox
(19.9+3.9733*nf)*1e-15
p_csub
(-56.4685+57.8069*log(nf))*1e-15
p_rsub
(150.7322-27.8594*log(nf))
p_sub_area ((10.14+(nf-1)*1.84)*17.94)*1e-12'
p_sub_pj 2*((10.14+(nf-1)*1.84)+17.94)*1e-6
54
55
+ vsat=80000
+ pclm=1.3
+ pdiblcb=0
+ drout=0.56
+ beta0=30
+ cgso=0
+ cf=1.00394e-10
+ toxm=4.17e-09
+ kt2=0
+ ub1=-6.026e-18
+ xw = 7e-9
*
.model d_sub d
+ level = 3
+ is = 4.204e-06
+ rs = 9.223e-06
+ bv = 14.38
+ tlev = 1
+ trs = 0.00249
+ pb = 0.75
+ php = 0.75
.ends
delta=0.01
pdiblc1=0.39
pscbe1=4.24e+08
nfactor=1
clc=1e-07
cgdo=0
acde='1.165-0.0016*dt'
kt1=0.085
ute=-0.4484
uc1=-0.0985
dwc=2.1e-7
wr=1
pdiblc2=0.0086
pscbe2=1e-05
cdsc=0.00024
cle=0.6
ckappa=0.6
moin=15
kt1l=0
ua1=4.57e-09
xl = 2.3e-9
area = 'p_sub_area'
jsw = 3.231e-12
ik = 400
ibv = 1e-3
eg = 1.17
cj = 0.000107
cjsw = 2.4e-11
pj = 'p_sub_pj'
n = 1.02
ikr = 3.4e+04
tlevc = 1
xti = 3
mj= 0.458
mjsw = 0.384
56
6.1 Contents
6.2 Criteria of P+ / N-Well varactor
6.3 Model Description and Parameters
6.4 SPICE parameter list
6.5 Model verification
57
Model validation:
a. Two port data is measured by 50 impedance system.
b. One port is defined as the output port connected to ground.
c. Simulation frequency is from 100MHz to 10GHz
58
P+
L1
Diode
L2
C2
D_n_sub
Rsub
Csub
(a)
PLUS
MINUS
(b)
Fig. 6-1 P+/N-Well varactor Extension equivalent circuit (a) and Layout (b)
59
N-Well
nf
RMS_S11(%)
RMS_S21(%)
RMS_S22(%)
RMS_S12(%)
30
2.823
2.925
2.892
2.095
45
3.867
2.775
2.747
2.154
60
1.792
2.685
2.655
1.371
90
1.516
2.23
2.213
1.275
120
1.623
2.956
3.031
1.504
Scaling formula
nf/30
p_L1
(15.2*p_nf_30)*1e-12
p_L2
1.31e-11
p_C2
(86.62*p_nf_30)*1e-15
p_CSUB
(12.19*2*p_nf_30)*1e-15
p_RSUB
143.3/p_nf_30
p_DIODE_AREA nf*(2*5)*1e-12
p_DIODE_PJ
nf*(2*(2+5))*1e-6
p_SUB_AREA ((39.94*int(nf/15)+(nf-(int(nf/15)*15)*1.5)*1.5+1.94)*8.88)*1e-12
p_SUB_PJ
2*((39.94*int(nf/15)+(nf-(int(nf/15)*15)*1.5)*1.5+1.94)+8.88)*1e-6
60
62
7.1 Contents
7.2 Criteria of MIM Capacitor model
7.3 Model Description and Parameters
7.4 Spice parameter list
7.5 Model Validation
63
Model validation:
a. Two port data is measured by 50 impedance system.
b. One port is defined as the output port connected to ground.
c. Simulation frequency is from 100MHz to 10GHz
64
Cs
Rs
Ls
Cox1
Cox2
999
65
PORT1 (M6)
PORT2 (M6)
MMC
VIA5
Metal 1 (GND)
nx=3
MMC
l
ny=3
w
MMC
Metal 6
Diffusion Dummy
Fig. 7-3 MIM Capacitor layout MR (left) & SR (right)
66
RMS_S11
(%)
RMS_S12
(%)
RMS_21
(%)
RMS_S22
(%)
A10X10X1
111.8m
451.5m
404.1m
169.9m
A10X10X4
531.0m
658.9m
994.4m
A10X10X9
1.25
613.7m
679.1m
917.5m
A10X10X16
1.731
513.4m
560.3m
1.135
A10X10X25
2.111
475.7m
521.3m
1.300
A10X10X36
2.441
447.4m
491.6m
1.441
A10X10X49
2.290
388.1m
424.3m
1.469
558.7m
RMS_S11
(%)
RMS_S12
(%)
RMS_21
(%)
RMS_S22
(%)
A10X10X1
111.8m
451.5m
404.1m
169.9m
A10X20X1
745.2m
536.9m
475.6m
1.125
A10X40X1
634.2m
329.8m
393.9m
1.391
A10X80X1
613.3m
253.3m
333.2m
1.192
A20X20X1
539.3m
353.6m
352.4m
928m
A20X40X1
643.0m
355.1m
428.0m
703.8m
A30X30X1
676.8m
351.7m
421.5m
646.8m
A40X40X1
1.103
336.9m
396.2m
623.2m
A50X50X1
1.317
321.3m
369.4m
758.4m
A60X60X1
1.625
330.8m
371.7m
984.7m
A70X70X1
1.858
362.8m
396.2m
1.295
A80X40X1
1.311
301.5m
350.8m
743.8m
A80X80X1
2.050
373.3m
419.5m
1.359
67
n*(l*w*0.001+1.5e-10*(l+w))*(1+3e-5*dt+1e-8*dt*dt)*(1.0027-0.0002*v+3e-5*v^2)
Rs
2.0667e-2*leb/wb
Ls
1e-7*leb/F*(0.0074*(leb/wb)+0.2399+0.7363/(leb/wb))
Cox1/Cox2
Remark
(leb*wb*cox+3.382e-11*(leb+wb))/2
dt=temp-25
n=nx*ny
leb=ny*(l+1.7e-6)+4.3e-6
wb=nx*(w+1.7e-6)+4.3e-6
F=1/(log(2*(1+sqrt(k1))/(1-sqrt(k1))))'
k1=sqrt(1-k*k)
k=wb/(wb+2*(1-4-wb/2-3.25e-5))
68
69
8.1Contents
8.2 Criteria of N+/P+ non-salicided Resistor model
8.3 Model Description and Parameters
8.4 Spice parameter list
8.5 Model Validation
70
Model validation:
a. Two port data is measured by 50 impedance system.
b. One port is defined as the output port connected to ground.
c. Simulation frequency is from 100MHz to 10GHz
71
Rs
2
Cox1
Csub1
Cox2
Csub2
Rsub1
999
Rsub2
999
72
(GND for N+
VDD for P+)
Metal 6
RMS of
S_11 (%)
2x20_10
103.3m
1.378
5x5_1
269.3m
706.9m
5x20_4
132.6m
576.7m
5x40_8
210.0m
1.251
5x50_10
290.0m
2.289
10x100_10
118.3m
3.049
RMS of
S_11 (%)
2x20_10
75.85m
4.291
5x5_1
244.3m
1.137
5x20_4
99.41m
2.091
5x40_8
116.5m
2.265
5x50_10
89.32m
2.667
10x100_10
707.8m
4.661
73
8.3.3
Scalable formula:
In this document, a scaling rule is provided to describe the behaviors of the devices. For
process variation issues, the resistance we measured for modeling extraction is slightly
different from EDR. Therefore some parameters in the formulas are centered according to
EDRs value.
Table 8_3
Parameter
Rs
Cox1/ Cox2
Formula
(2*17e-6/wi+113*l/wi)*(1+tc1*dt+tc2*dt*dt)*(1.0-3.76e-9*v/l-8.474e-14*(v/l)^2)
((8.854e-12*Eeff*l/F)+(8e-16+8e-10*wi-1.8e-5*wi*wi))/2
Rsub1/Rsub2
2/(5*(5e-6+wi/2)*1.66e-3*F1)
Csub1/Csub2
2.944e-12/Rsub1
Remark
74
Table 8-4
Parameter
Rs
Cox1/ Cox2
Formula
(2*105e-6/wi+352*l/wi)*(1+tc1*dt+tc2*dt*dt)*(1.0-1.06e-8*v/l-1.05e-13*(v/l)^2)
((8.854e-12*Eeff*l/F)+(2e-15+4e-10*wi-2e-5*wi*wi))/2
Rsub1/Rsub2
2/(5*(5e-6+wi/2)*1.66e-3*F1)
Csub1/Csub2
2.944e-12/Rsub
Remark
75
76
.PARAM Csub='2.944e-12/Rsub'
.PARAM Csub1='Csub/2'
.PARAM Csub2='Csub1'
* --------- Equivalent network ------------------*
Rs 1 2 'Rs*(1.0-0.00376e-6*abs(v(1,2)/l)-0.08474e-12*abs(v(1,2)/l)*abs(v(1,2)/l))'
Cox1 1 11 Cox1
Cox2 2 22 Cox2
Rsub1 11 999 Rsub1
Csub1 11 999 Csub1
Rsub2 22 999 Rsub2
Csub2 22 999 Csub2
*
.ENDS
*
# UMC_18_RES_PPP_RF RESISTOR
*
.SUBCKT RNPPO_RF 1 2 999 l=20e-6 w=20e-6
*
.PARAM dw='-0.046e-6'
.PARAM wi='w+dw'
.PARAM dt='temper-25'
.PARAM tc1='-2.84e-4'
.PARAM tc2='3e-7'
.PARAM Rs='(2*105e-6/wi+352*l/wi)*(1+tc1*dt+tc2*dt*dt)'
.PARAM x='4e-7/wi'
.PARAM Ep='2.5+1.5/(sqrt(1+10*x))'
.PARAM F='2/(1/x+2.42-0.44*x+pow(1-x,6))'
.PARAM Z0='120*3.14159*F/sqrt(Ep)'
.PARAM fc='1.9895e12*Z0*(sqrt(1/Ep))'
.PARAM Eeff='4-(4-Ep)/(1+3e9/(fc*fc))'
.PARAM Cox='(8.854e-12*Eeff*l/F)+(2e-15+4e-10*wi-2e-5*wi*wi)'
.PARAM Cox1='Cox/2'
.PARAM Cox2='Cox1'
.PARAM dgg='1e-5+2*wi'
.PARAM dsg='5e-6+wi'
77
.PARAM rgg='l/dgg'
.PARAM rsg='l/dsg'
.PARAM Ps='2*(wi+2e-7)'
.PARAM Pg='2*(wi+1.48e-6)'
.PARAM Ls='2e-7*l*(log(4*l/Ps)+0.5) '
.PARAM Lg='2e-7*l*(log(4*l/Pg)+0.5)'
.PARAM Mgg='2e-7*l*(log(rgg+sqrt(1+rgg*rgg))-sqrt(1+1*pow(rgg,-2)+1*pow(rgg,-1)))'
.PARAM Msg='2e-7*l*(log(rsg+sqrt(1+rsg*rsg))-sqrt(1+1*pow(rsg,-2)+1*pow(rsg,-1)))'
.PARAM Lsg='(Lg+Mgg)/2+Ls-2*Msg'
.PARAM F1='1.05e-6/Lsg'
.PARAM Rsub='1/(5*(5e-6+wi/2)*1.66e-3*F1)'
.PARAM Rsub1='Rsub*2'
.PARAM Rsub2='Rsub1'
.PARAM Csub='2.944e-12/Rsub'
.PARAM Csub1='Csub/2'
.PARAM Csub2='Csub1'
* --------- Equivalent network ------------------*
Rs 1 2 'Rs*(1.0-0.0106e-6*abs(v(1,2)/l)-0.105e-12*abs(v(1,2)/l)*abs(v(1,2)/l))'
Cox1 1 11 Cox1
Cox2 2 22 Cox2
Rsub1 11 999 Rsub1
Csub1 11 999 Csub1
Rsub2 22 999 Rsub2
Csub2 22 999 Csub2
*
.ENDS
*
78
9.1 Contents
9.2 Criteria of HR non-salicided poly resistor model
9.3 Model Description and Parameters
9.4 Spice parameter list
9.5 Model Validation
79
Model validation:
a. Two port data is measured by 50 impedance system.
b. One port is defined as the output port connected to ground.
c. Simulation frequency is from 100MHz to 10GHz
80
Rs
2
Cox1
Csub1
Cox2
Csub2
Rsub1
999
Rsub2
999
81
(VDD)
Metal 6
HR Poly
RMS of
S_11 (%)
2x20_10
72.58m
4.021
5x5_1
47.04m
699.2m
5x20_4
37.82m
2.116
5x40_8
93.76m
3.302
5x50_10
102.7m
4.548
82
9.3.3
Scalable formula:
In this document, a scaling rule is provided to describe the behaviors of the devices. For
process variation issues, the resistance we measured for modeling extraction is slightly different
from EDR. Therefore some parameters in the formulas are centered according to EDRs value.
Formula
(2*120e-6/wi+1039*(l-0.4e-6)/wi)*(1+tc1*dt+tc2*dt*dt)*(1.0-3.5e-8*v/(l-0.4e-6)
-1.5e-13*(v/(l-0.4e-6))^2)
((8.854e-12*Eeff*l/F)+(-4e-17+1.8e-9*wi-1.4e-4*wi*wi))/2
Rsub1/Rsub2
2/(5*(5e-6+wi/2)*1.66e-3*F1)
Csub1/Csub2
2.944e-12/Rsub1
Remark
83
84
.PARAM Csub='2.944e-12/Rsub'
.PARAM Csub1='Csub/2'
.PARAM Csub2='Csub1'
* --------- Equivalent network ------------------*
Rs 1 2 'Rs*(1.0-3.5e-8*abs(v(1,2)/(l-0.4e-6))-1.5e-13*abs(v(1,2)/(l-0.4e-6))*abs(v(1,2)/(l-0.4e-6)))'
Cox1 1 11 Cox1
Cox2 2 22 Cox2
Rsub1 11 999 Rsub1
Csub1 11 999 Csub1
Rsub2 22 999 Rsub2
Csub2 22 999 Csub2
*
.ENDS
*
85
10.1 Contents
10.2 Model Description and Parameters
10.3 Spice parameter list
10.4 Model Validation
86
999
Fig. 10-1 Equivalent circuit of shielding pad
Fig. 11-1 Equivalent circuit of shielding pad
65um
Metal 1 (GND)
Metal 6
10.2.2
Description
128.6m
762.2m
49.78m
491.8m
(M1 GND)
34.95m
2.016
(M1 GND)
58.97m
1.523
Series by M6, M5
(M1 GND)
88.55m
2.297
Series by M6
(M1 GND)
Formula
(411.65-380.75*N+153.76*N^2-28.306*N^3+1.9421*N^4)*1e-15
65e-6*0.372*6.6711e-9/C
N=6-index
88
89
Appendix:
A: RMS Error Definition:
The errors between the simulation and measurement are calculated and used to illustrate
the accuracy of the model. The RMS error is defined as following:
2
2
[(
sim
meas
)
/
N
]
/
i
i
meas i / N
i =1
i =1
N
RMS error =
Where:
simi = the ith simulated data point,
measi = the ith measurement data point, and
N = the total number of data point.
The RMS error definition is used to describe the accuracy of RF model. The frequency range
is from 100MHz to 10GHz.
90