Documente Academic
Documente Profesional
Documente Cultură
ISSN: 2356-5608
Sousse, Tunisia - 2014
Research Unit of Renewable Energy in Medium Sahara, Adrar, Algeria Email: bouraiouahmed@gmail.com
Research Unit of Renewable Energy in Medium Sahara, Adrar, Algeria Email: salachtar@yahoo.fr
3
Research Unit of Renewable Energy in Medium Sahara, Adrar,Tlmcen University Algeria Email:hadidiabdelkader@mail.com
4
Electromechanical Department, Badji Mokhtar-Annaba University, Algeria Email: nadir-benamira@live.fr
I. INTRODUCTION
I = I ph I d
I d = I 0 (e
(1)
qV d
akT
1)
(2)
qV d
I = I ph I 0 ( e akT 1)
Where
I : the diode current [A]
Iph : the photocurrent [A]
I0: the reverse saturation current of diode [A]
Vd: the diode voltage [V]
a : the diode ideality constant
k :the Boltzmann constant
T :the p-n junction temperature
q :the electron charge
(3)
There are a few things that have not been taken into account in the simple model and that will affect the performance of a PV cell in practice.
Series Resistance Rs: In a practical PV cell, there is a series of resistance in a current path through the semiconductor material, the metal grid, contacts, and current collecting
bus.
Parallel Resistance Rp : This is also called shunt resistance.
It is a loss associated with a small leakage of current through
a resistive path in parallel with the intrinsic device [4][5].
I d = I 0 (e
qV d
NakT
1)
(4)
10
9
8
7
C u rren t (A )
For a string of cells connected in series forming a photovoltaic panel the equation becomes:
6
5
4
3
2
1
0
10
15
20
25
30
35
Voltage (V)
Fig.3 I-V Characteristic of typical panel under STC (25C and
1000W/m2)
Fig.2 The practical electrical model of solar cell
200
I = I ph I d I p
Vd
Rp
I d = I 0 (e
V + R s .I
Rp
qV d
akT
160
140
(6)
P ow er (W )
Ip =
180
(5)
120
100
80
1)
(7)
60
40
V +Rs .I
Vt .a
I = I ph + I0 (e
v + Rs .I
1)
Rp
20
(8)
10
15
20
25
30
35
Voltage (V)
The photocurrent:
I ph
G
= ( I Ph,n + ki .T ).
Gn
(9)
I sc
V
+ k i . T
,n
oc , n
+ k
a .V
25C and
I0 =
(10)
B. Matlab/simulink model
For simulation the characteristics I-V and P-V of panel
KC200GT we use the matlab Simulink model presented by
[10],[11]:
[I]
i
-
Rs
+
-
V
[V]
Rp
I-V scope
[I]
Ipv
Test ramp
0 < V < Vocn
[V]
P-V scope
[Im]
Inputs:
25+273.15
[T]
1000
Temperature
[K]
[G]
Irradiation
[W/m2]
Rs
[Ipv]
1
[Im]
[I]
[Io]
q/(a*k*Ns)
[Vta]
[T]
[G]
Ki
Gn
[Ipv]
[T]
[dT]
Ipvn
Tn
[Io]
[Vta]
[dT]
1
G1
1000
Irradiation
[W/m2] 2
powergui
+
25+273.15
KC200GT
200 w
8.21 A
32.9 V
7.61 A
26.3 V
-123 mV/C
3.18 mA/C
54
500
Irradiation
[W/m2] 1
i
+
Module 1
G2
+
Temperature
[K]
I-V
+
-
T2
P-V
s
-
Parameter
Maximum Power Pmax
Short Circuit Current Isc
Open Circuit Voltage Voc
Maximum Power Current Impp
Maximum Power Voltage Vmpp
Temperature Coefficient Kv
Temperature Coefficient Ki
Number of cells Ns
Continuous
T1
25+273.15
Temperature
[K]2
Module2
C. Simulation
10
T=15C
T=25C
T=35C
T=605C
9
8
7
C u rren t(A )
6
5
200
G =1000 W/m2
G =800 W/m2
180
G =600 W/m2
G =400 W/m2
160
2
1
P ow er (W )
140
120
10
15
20
25
30
35
Voltage (V)
100
80
60
40
20
0
10
15
20
25
30
35
Voltage (V)
Fig.9 P-V Characteristic for different levels of irradiances and at temperature constant of 25 C.
10
G=1000 W/m2
G=800 W/m2
G=600 W/m2
8
G=400 W/m2
C u rren t (A )
6
5
4
3
2
1
0
10
15
20
25
30
35
Voltage (V)
Fig.10 I-V Characteristic for different levels of irradiances and at temperature constant of 25 C.
The following figures show the characteristic P-V and I-V
of KC200GT module for different levels of temperature
(15,25,35,60) and at irradiance constant of 1000W/m2.
220
T=15c
T=25c
200
180
T=35c
T=60c
160
P ow er (w )
400
Module 1
PV System
Module 2
140
350
100
300
80
P ow er(W )
120
250
60
200
40
150
20
0
10
15
20
25
30
35
Voltage (V)
Fig.11 P-V Characteristic for different levels of temperature and at irradiance constant of 1000W/m2.
100
50
10
20
30
40
50
60
70
Voltage (V)
Module 1
Module 2
PV system
C u rren t(A )
7
6
5
4
3
2
1
0
10
20
30
40
50
60
70
Voltage (V)
IV. CONCLUSION
In this paper we have presented the basic equivalent
electric circuit of PV cell, module and the matlab/simulik
model of PV module, and small PV array with two panels.
The characteristic I-V and PV curves of KC200GT panel
are obtained using the Matlab/Simulink for different values
of irradiance and different values of temperatures, and also
the characteristic I-V and PV curves of PV array are
obtained under uniform condition and non-uniform
condition due to partial shading. The simulations where
carried out in Matlab environment which gives a good
understanding of the effect of partial shading on the
photovoltaic system (array) and a good presentation of
characteristics I-V and P-V under different variation of
irradiation and temperature.
Module 1
Module 2
With bypass diode
No bypass diode
Uniform
350
P o w e r (W )
300
250
200
150
100
50
V. REFERENCES
0
10
20
30
40
50
60
70
[1]
Voltage (V)
Fig.16 P-V curve of PV array under uniform and non-uniform
condition due to partial shading with bypass diode and without
bypass diode.
Module 1
Module 2
With bypass diode
No bypass diode
Uniform
8
7
C u rre n t(A )
6
5
4
3
2
1
0
10
20
30
40
50
60
70
Voltage (V)
Fig.17 I-V curve of PV array under uniform and non-uniform
condition due to partial shading with bypass diode and without
bypass diode.
R. SIMS, Energy for Tomorrows World a renewable energy perspective, Renewable Energy World, pp.2430, Review Issue
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CRC Press, 2000, pp.41-51.
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ombrage partiel sur la production lectrique dun module phototaque
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San Francisco, USA.
[5] A.Luque ,S.Hegedus ,Handbookof Photovotaic Science and Engineering,2003,John Wiley and Sons Ltd.
[6] M.G. Villalva, J.R. Gazoli, and E.R. Filho, Comprehensive Approach to Modeling and Simulation of Photovoltaic Arrays, IEEE
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[7] K. Ishaque, Z. Salam, H. Taheri and Syafaruddin, Modeling and
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Based on a Two-Diode Model, Simulation Modeling Practice and
Theory, N19, N7, pp. 1613 - 1626, 2011.
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[9] KC200GT high efficiency multicrystal photovoltaic module datasheet.
[10] M. G. Villalva, J. R. Gazoli, E. R. Filho, Modeling And CircuitBased Simulation Of Photovoltaic Arrays, Braziilian Journal of
Power Electronics,2009,Vol. 14,No. 1,pp.35-45,ISSN 1414-8862
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