a

Semiconductor

HOW TO USE

IF

THE DEVICE TYPE NUMBER

Look up the number

replacement type
is

also indicated,

are numeric-alpha,

IF

will

in

IS

THIS

BOOK

KNOWN

the Index. Either the exact General Electric type or a suggested

be shown. The page

and going to that page

number of

will

the referenced Specification Sheet

provide you detailed information. Listings

by column.

THE GENERAL APPLICATION

IS

KNOWN

Refer to the Selector Guide for an overview of devices available and select one or

more types to

number of the

fit

your application. Then

refer

back to the Index to obtain the page

detailed Specification Sheets.

USE INDEX FOR EXACT PAGE NUMBER

201

- 297

298

- 544

545 to

GENERAL

ELECTRIC

END

The information in this catalog has been carefully checked and is believed to be reliable. However, no responsibility is
assumed for inaccuracies. The suggested replacements in this catalog represent what we believe to be the nearest GE
equivalents for the products listed and in most instances are exact replacements. However, GE assumes no responsibility
and does not guarantee that the replacements are exact, but only that the replacements will meet the terms of its
applicable published written product warranties.
key tool for actual replacements.

Copyright

The

pertinent

GE

1977 General

product specification sheets should be used as the

Electric

Company

Semiconductor Products Department

Electronics Park

Syracuse, N.Y. 13201

U.S.A.

Semiconductor
Data Ha
Third Edition

^rstss*

The semiconductor devices and arrangements

disclosed herein

may

be covered by patents of General Electric

Company

or others. Neither the disclosure of any information herein nor the sale of semiconductor devices by General Electric
Company conveys any license under patent claims covering combinations of semiconductor devices with other devices

absence of an express, written agreement to the contrary. General Electric Company assumes no
any use of the semiconductor devices with other devices or elements
by any purchaser of semiconductor devices or others.

or elements,
liability

tn the

for patent infringement arising out of

PRINTED

IN U.S.A.

CONTENTS

PAGE INDEX &

INTERCHANGEABLY INDEX (NUMERIC-ALPHA ORDER)

SELECTOR GUIDES
Silicon Signal Transistors
Silicon

Power Transistors

.*~

Signal Diodes

Tunnel Diodes
121
Unijunctions, Switches and Triggers

Optoelectronics
Rectifiers

SCR

123
19

130

'

137

Heat Exchangers for Rectifiers and SCR's

Assemblies, Modules and Stacks
TriaCS

51

152
154

GE-MOV

Varistors

Power Modules

Subscretes
Military

and Hi-Reliability Types

158
--_
163
, _
1 65
16

Hardware

1 69

Technical Publications

.-..

Semiconductor Symbols

GE-OEM

Sales Offices

173

nc
175

SPECIFICATION SHEETS (USE INDEX FOR EXACT PAGE)

1N

'

2N

'

201
S

3N 4N
'

Industry Types

298
516
g-c

MANUFACTURER'S CODES

AME
AM

AMD

Amelco Semiconductors
American Micro Semiconductors
Advanced Micro Devices

APX Amperex Electronic Corp.

ATL Atlantic Semiconductor, Inc.
- Centra Lab
CL
CLA - Clarix
CMI - CMI, Inc.
Dl
Diodes, Inc.
ECC Electronics Component Corp.
ECD - Unisem Corp.
EDL Edal Industries
Electronic Devices, Inc.
ED
ELN - Electro-Nuclear Labs
ESM Societe European De Semiconducteurs, France
FER - Ferranti Ltd., England
FSC Fairchild Semiconductor
General Instruments
Gl
General Semiconductors, Inc.
GSI
- Hei, Inc.
HEI
- Hewlett-Packard Co.
HP
HUN Hunt Semiconductors
HUT - Hutson Semiconductors
International Rectifier
IR
INT - Intel
Industro Transistor Corp.
ITC
KMC KMC Semiconductor Corp.
Litronix
LIT
LUC Lucas, England
MAT Matsushita, Japan
MEH Micro Electronics, Hong Kong
MIC Microsemiconductor Corp.
MS - Micro State
MIT Mitsubishi, Japan
MON - Monsanto Co.
MOS - Mosek
MOT Motorola Semiconductor Products, Inc.
MS Micro Systems, Int.
MST MS Transistor Corp.
NAT National Electronics
NEC Nippon Electronic, Japan

NSC
OPC
OPT
PHF
PIR

PLY
PPC
PSI

RAD
RAY
RCA
RC
ST

SK

SM
SER
SGS

SHW
SIG

SG
SIL

SOD
SPE

SPR
SPG
SSI

STC
SYL

SYN
TAG
TEC
Tl

TOS

TRW
TSC
UNI

UNS
UPI

VAR
VAD
WES

National Semiconductor Corp.

- Opcoa, Inc.
- Optron, Inc.
- Philco-Ford Corp.
Pirgo Electronics, Inc.
- Plessy, Ltd.
Power Physics
Power Semiconductor, Inc.
La Radiotechnique, France
- Raytheon Co.
RCA/Electronics Components
Rectifier Components
Sarkes-Tarzian
Semicon, Inc.
- Semteck Corp.
Servex Semiconductor Division, Australia
Societa Generale Semiconductors, Italy
Siemens, W. Germany
Signetics
Silicon General
Silicon Transistor Corp.
Solitron Devices, Inc.
Spectronics, Inc.
Sperry Gyroscope Co.
Sprague
Solid State Products, Inc.
Silicon Transistor Corp.
Sylvania Electric Products, Inc.
- Syntron
Transistor AG, Switzerland
Transitron Electronic Corp.
Texas Instruments, Inc.
Toshiba, Japan
TRW Semiconductor Division
Teledyne Semiconductors
Unitrode Corp.
Unisem, Inc.
United Page, Inc.
- Varo, Inc.
Varadyne
Westinghouse Electric Corp.

The suggested replacements represent what we believe to be equivalents for the products listed. GE assumes
no responsibility and does not guarantee that the replacements are exact, but only that the replacements will
meet the terms of its applicable published written product warranties. The pertinent GE product specification
sheets should be used as the key tool for actual replacements.

Suggested GE
Replacement

Type

Mfg. Prod. Line

1000PK"
101KL"
101RA"
101RC"
10RC100A
10RC10A
10RC10AS24
10RC120A
10RC20A
10RC20AS24
10RC30A
10RC30AS24
10RC40A
10RC40AS24
10RC50A
10RC50AS24
10RC60A
10RC60AS24
10RC80A
115PA"

125PAIB"

125PAM"
140PAM"
150K"
151RB"
151RC"
16C025C
16C050C
16C10C
16C15C
16C20C
16C25C
16C30C
16C40C
16C50C
16C60C
16C70C
16C80C
16RC100A
16RC10A
16RC10AS24
16RC120A
16RC20A
16RC20AS24
16RC30A
16RC30AS24
16RC40A
16RC40AS24
16RC50A
16RC50AS24
16RC60A
16RC60AS24
16RC80A

IR

IR

SCR

IR
IH

RECTIFIER

IR

SCR
SCR
SCR
SCR
SCR
SCR

IR
IR

IR
IR

IR
IR
IR
IR
IR

IR
IR
IR
IR
IR
IR
IK
IR
IR
IR

IR

SYN
SYN
SYN
SYN

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
IR
IR
IR
IR
IR
IR

IH
IR
IR

IR
IR
IR
IR
IR
IH

1714-0402
1714-0405
1714-0602
1714-0605

175PA"

IH

18RC10
18RC15

IK

C230AX243
C37AX127
C137PBX27
C230BX243
C37BX127
C230CX243
C37CX127
C2300X243
C37DX127
C230EX243
C37EX127
C230MX243
C37MX127
C137NX27
C350
C365
C365
C364
A180
C180
C180
2N681
2N682
2N683
2N684

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

PWR
PWR
PWR
PWR

2N685
2N686
2N687
2N688
2N689
2N690
2N691

2N692
2N5206
C230AX244

C140A
2N5207
C230BX244
C140B
C230CX244
C140C
C230DX244
C140D
C230EX244
C139E20E
C230MX244

TRAN
TRAN
TRAN
TRAN

IR

1N248A, RA
1N248B, RB

GE
GE
GE
GE
GE
GE
GE
GE

SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
RECTIFIER
RECTIFIER

205
205
205
205
206
205
201
201

1N248C, RC
1N248, R
1N249A, RA
1N249B, RB
1N249C. RC
1N249. R
1N250A, RA
1N250B, RB
1N250C, RC
1N250. R

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

201
201
201
201
201
201
201
201
201
201

18RC20
18RC25
18RC2
18RC30
18RC40
18RC50
18RC5
18RC60
18RC70
18RC80
18RC90
18RC100
1N914
1N914A
1N914B
1N916
1N916A
1N916B

CF= CONTACT FACTORY

IR

IR
IR
IR
IR
IR
IR

IR
IR
IR

IR

Page
CF
577
842
842
CF
CF
CF
CF
CF
CF

CF
CF
CF
CF
CF
CF
CF
CF
CF
886

906
906
906
581

842
842
306
306
306
306
306
306
306
306
306
306
306
306
463
CF
783
463
CF
783
CF
783
CF
783
CF
775

2N5205
Q44C6
D44C6
D44C8
D44C8
:380
C137AX149
C137GX149

CF
775
463
1147
1147
1147
1147
912
CF
CF

C137BX149
C137HX149
C137UX149
C137CX149
C137DX149
C137EX149
C137FX149
C137MX149
C137SX149
C137NX149

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF

C137TX149
C137PX149

CF
CF

C139M20M

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

IH

Type
C450/C451
A177
C180
C180
C137PX27

RECTIFIER

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

IR

Page

Suggested

GE

Replacement
Type

Mfg. Prod. Line

1N1183A, RA

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

209
209
209
209
209
209
209
209
209
209

1N1192.RARA
1N1193.RARA
1N1194.RARA

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

209
209
209
209
209
209
CF
CF

1N1195, R.A.RA
1N1196,i.RARA
1N1197, R.A.RA
IN1 198. R.A.RA
1N1199, R.A.RA
1N1200, R.A.RA
1N1201, R.A.RA
IN 1202. R.A.RA
1N1203 R.A.RA
1N1204 R.A.RA

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

CF
CF
CF
CF
213
213
213
213
213
213

1N1205.R.A.RA

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

213
213
217
217
217
217
217
217
217
217

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

CF
CF
CF
CF
CF
CF
CF
221
221
221

1N1615.R

GE

1N1616R

GE
GE
GE
GE
GE
GE
GE
GE

225
225
225
225
225
225
225
230

1N1183.R
1N1184A, RA

1N1184.R
1N1185A, RA
IN1 185. R

1N1186A, RA

1N1186.R
1N1187A, RA

1N1187.R
1N1188A, RA

1N1188.R
1N1189A, RA
IN1 189. R

1N1190A, RA

1N1190.R
1N1191,R,A.RA

1N1206.RARA
1N1341.R.A.RA
1N1342.R.A.RA

1N1343.RARA
1N1344.RARA
1N1345.RARA
1N1346.RARA
1N1347.R.A.RA

1N1348.RARA
IN 1581.
1N1582,
1N1583.
1N1584,
1N1585,

R
R
R

R
R

1N1586, R
1N1587, R

1N1612R
1N1613R
1N1614 R

Page

CF
CF

GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

1N3209, R
1N3210, R
1N3212, R
1N3213, R
1N3214, R
1N3260.R
1N3261.R
1N3262.R
1N3263.R

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

230
230
230
230
230
230
232
232
232
232

1N3264.R
1N3265.R
1N3266, R
1N3267, R
1N3268, R
1N3269, R
1N3270, R
1N3271, R
1N3272, R
1N3273, R

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

232
232
232
232
232
232
232
232
232
232

1N3288.R
1N3289.R
1N3290, R
1N3291, R
1N3292.R
1N3293, R
1N3294.R
1N3295, R
1N3296, R

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

234
234
234
234
234
234
234
234
234
213

1N2154,
1N2155,
1N2156,
1N2157,
1N2158,
1N2159,
1N2160.
1N3208,

R
R
R
R
R

R
R

1N3211.R

1N3670AR

221
221

Type

Page

Suggested

Suggested GE
Replacement

Type

Mfg. Prod. Line

Page

Type

Page

Type

RECTIFIER
RECTIFIER
RECTIFIER
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO

213
213
213
237
237
237
237
237
237
237

1N4531
1N4532
1N4533
1N4534
1N4536
1N4606
1N4607
1N4608
1N4727
1N4828

TUNNEL DIO
TUNNEL DIO
TUNNEL DIO

1N3735.R
1N3736.R
1N3738, R
1N3739, R
1N3740, R
1N3741, R
1N3742. R

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

237
237
237
241
241
241
241
241
241
241

1N4829
1N4830
1N4863
1N4864
1N5059
1N5060
1N5061
1N5062
1N5179

1N3743, R
1N3765, R
1N3766, R
1N3767, R
1N3768, R
1N3879.R
1N3880.R
1N3881.R
1N3882.R
1N3883.R

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

241
209
209
209
209
247
247
247
247
247

1N5332. R

1N3889.R
1N3890.R
1N3891.R
1N3892.R
1N3893.R
1N3899.R
1N3900.R
1N3901.R
1N3902.R
1N3903.R

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

249
249
249
249
249

1N3909.R
1N3910.R
1N391 1,R

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

253
253
253
253
253
CF
CF
CF
CF
255

201ZD
202A
202B
202C
202D
202E
202F
202H
202K

1N4045.R
1N4046.R
1N4047.R
1N4048.R
1N4049.R
1N4050.R
1N4051.R
1N4052.R
1N4053.R
1N4054.R

GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

255
255
255
255
255
255
255
255
255
255

202P
202S
202U
202V

1N4055.R
1N4056.R

GE
GE

1N409O
1N4148
1N4149
1N4150
1N4151
1N4152
1N4153
1N4154

GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
TUNNEL DIO
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE

203 D
203 E
203 F
203 H

203Z
22RC10

1N3671.AR
1N3672.A. R
1N3673.A. R

GE
GE
GE

1N3712
1N3713
1N3714
1N3715
1N3716
1N3717
1N3718

GE
GE
GE
GE
GE
GE
GE

1N3719
1N3720
1N3721

1N3912
1N3913.R
1N3987, R
1N3988, R
1N3989, R
1N3990. R
1N4044.R

1N4156
1N4157
1N4245
1N4247
1N4248
1N4249
1N4305
1N4444
1N4446
1N4447
1N4448
1N4449
1N4450
1N4451
1N4453
1N4454
1N4510.R
1N4511.R
1N4529.R
1N4530.R

GE
GE
GE
GE
GE
GE
GE

251
251
251
251
251

SIG DIODE

255
255
257
205
206
258
262
262
262
205

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SIG DIODE
SIG DIODE
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE

266
266
270
270
270
270
229
272
205
205

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

205
205
258
274
266
262
278
278
282
282

1N5331, R

1N5624
1N5625
1N5626
1N5627
201A
201B
201C
2010
201E
201F

201H
201K

201M
201P
201S
201U

201V
201Z
201ZB

202M

20 2Z

202ZB
202ZD
203A
203B
203 C

203K

203M
203P
203S
203U
203V

Mfg.

Prod. Line

205
262
262
262
205
258
274
274
286
CF

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SIG DIODE

266
266
288
288
290
290
290

GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

GE

SIGOIODE
SIG DIODE
SIG DIODE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
SIG DIODE
RECTIFIER

WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR

22RC20
22RC30
22RC40
22RC50
22RC60
23C100B
23C110B
23C120B
23C50B
23C60B
23C70B
23C80B
23C90B

IR

240PAM"
250PAC"
250PAM"
250PA"

IR

IR

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

251UL"

IR

RECTIFIER

IR
IR
IR
IR
IR

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
IR
IR

Type

Page

SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
RECTIFIER

GE
GE
GE
GE
GE
GE
GE
GE
GE

Page

290
266
213
209
294
294
294
294

2N682
2N683
2N684
2N685
2N686

306
306
306
306
306

2N687
2N688
2N689
2N690
2N691
2N692
2N681
C137TX27
C137PX27
C137PAX27

306
306
306
306
306
306
306
CF
CF
CF

C137PBX27
2N1843
2N1844
2N1845
2N1846
2N1847
2N1848
2N1849
2N1850

CF

C36M

328
328
328
328
328
328
328
328
328

C36S
C36N
2N1842
C137TX31
C137PX31
C137PAX31
C137PBX31
2N1843A
2N1844A
2N1845A

328
328
328
CF
CF
CF
CF
328
328
328

2N1846A
2N1847A
2N1848A
2N1849A
2N1850A

328
328
328
328
328
675
675
675
328
CF

C35M
C35S
C35N
2N1842A
C137TX31

C137PX31
C38A
C38B
C38C
C38D
C38E

C137MX63
C137P
C137PA
C137PB
C137E

C137M
C137S
C137N
C137T
C386
C380X500
C438
C430
A197
.

CF= CONTACT FACTORY

GE

Replacement

CF
683
683
683
683
683
CF
771
771
771
771
771
771
771
771
921

917
CF
CF
588

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

2853

Type

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

2853-2
2853-3
2854-1
2854-2

2854-3
2855-1
2855-2
2855-3
2856-1
2856-2
2856-3

D42C6
D44C6
D42C6
D42C6
D44C6
D42C6
D42C6
D44C6
D42C6
D42C6
D44C6
D42C6

2N489
2N489A
2N489B
2N490
2N490A
2N490B
2N490C
2N490C

GE
GE
GE
GE
GE
GE
GE
GE

UJT
UJT
UJT
UJT
UJT
UJT
UJT
UJT

2N681
2N681
2N682
2N682
2N683
2N683
2N684
2N684
2N685
2N685

GE
GE
GE
GE
GF
GE
GE
GE
GF
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

306
306
306
306
306
306
306
306
306
306

2N686
2N686
2N687
2N687
2N688
2N688
2N689
2N689
2N690
2N690

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

306
306
306
306
306
306
306
306
306
306

2N690A

GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR

306
306
306
306
306

2N691
2N691
2N692
2N692

2N696A
2N697
2N697A
2N877
2N878
2N879
2N880
2N881
2N885
2N886

2N887
2N888
2N889
2N929
2N930
2N1047
2N1049
2N1050
2N1067
2N1068
2N1069
2N1070
2N1084
2N1092
2N1206

2N122
2N1335
2N1336
2N1337
2N1338
2N1339
2N1340
2N1341
2N1342
2N1409

2N1410A
2N1445
2N1470
2N1479
2N1480
2N1481
2N1482
2N1483
2N1484
2N1485
CF = CONTACT FACTORY

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

SCR
SCR

310
310

GF
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

310
310
310
310
310
310
310
310

TRAN
TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

2N1486
2N1505
2N1506
2N1506A
2N1595
2N1595A
2N1596
2N1596A
2N1597
2N1597A

1147
1135

2N1598
2N1598A
2N1599
2N1599A
2N1600
2N1601
2N1602
2N1603
2N1604
2N1613A

2N16138
2N1671
2N1671A
2N1671B
2N1671C
2N1691
2N1700
2N1701
2N1709
2N1710
2N1714
2N1715
2N1716
2N1717
2N1718
2N1719
2N1720
2N1721
2N1722
2N1723

D40E5
D40E5
D40E5

GE
GE

Type

1135
1147
1135
1135
1147
1135
1135
1147
1135
1135

298
298
298
298
298
298
304
304

PWR TRAN
PWR TRAN
PWR TRAN

SIG
SIG

Page

1109
1109
1109

GES929
GES930

1191
1191

D44C7
D44C8
044R1
D40E1
040E1

D40E5

1147
1147
1159
1109
1109
1147
1147
1143
1135
1109

D40P1
D44R1
044R1
D44R1
D44R1
D44R1
D44R1
D44R1
D44R1
D40E1

1159
1159
1159
1159
1159
1159
1159
1159
1109

D44C6
D44C8
D43C5
D42C1

D40E1
D44R1

D44C8
D40E5
D40E7
D40E5
D40E7
D44C5
D44C8
D44C5

1121

1109
1159
1147
1109
1109
1109
1109
1147
1147
1147

GE

Replacement

2N1725
2N1768
2N1769
2N1770
2N1770A
2N1771
2N1771A
2N1772
2N1772A
2N1773

2N1773A
2N1774
2N1774A
2N1775
2N1775A
2N1776
2N1776A
2N1777
2N1777A
2N1778
2N1792
2N1793
2N1794
2N1795
2N1796
2N1797
2N1798-

Mfg. Prod. Line

PWR
PWR
PWR
PWR
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRAN
TRAN
TRAN
TRAN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE

TRAN
TRAN
TRAN
TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR
UJT
UJT
UJT
UJT

Type

Page

D44C8
D40E5
040E5
040E7

1147
1109
1109
1109

040E5

1109

314
314
314
314
314
314
314
314
314
314
322
322
322
322
322

PWR TRAN
PWR TRAN

1109

318
318
318
318
D40P1
D40E5

044C4
D42C7
D42C4
040E5
D44R1
D40E5
D44R1
D40E5
D42R1
D44C8
D42R1

SCR
SCR

322
663
322
663
322
663
322

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

663
322
663
322
663
322
663
322
663
322

GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR

707
707
707
707
707
707
707

2N1837
2N1838
2N1839

2N1840
2N1842
2N1842A
2N1842B
2N1843
2N1843A
2N1843B
2N1844
2N1844A
2N1844B
2N1845
2N1845A
2N1845B
2N1846
2N1846A
2N1846B
2N1847
2N1847A
2N1847B
2N1848

Page

PWR TRAN
PWR TRAN
PRW TRAN
PRWTRAN
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

328
328
675
328
328
675
328
328
675

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

328
328
675
328
328
675
328
328
675
328

1121
1109
1147
1135
1135

D44H10
D44H11

1109
1159
1109
1159
1109
1139
1147
1139
1155
1155

D44H11
044C6
D44C8

1155
1147
1147

D40E5
D40E5
D40E5

1109
1109
1109

D40E1

1109

Suggested

;;;;
!!

::::::
;;;;;;

::::::
::::::

iiini
:*::

;;;
::::::
;:::::
;;;;
;;;;;;

!"!!!
Hi:::
**!!!!

;;
::::::
s::s::
:::!
llllll

::::::

mi"

Willi

Type

Mfg. Prod. Line

2N1848A
2N1848B
2N1849
2N1849A
2N1849B
2N1850
2N1850A
2N1850B
2N1886
2N1889
2N1890
2N1909
2N1910
2N1911
2N1912
2N1913
2N1914
2N1915
2N1916
2N1943
2N1958
2N1958A
2N1959
2N1959A
2N1972
2N1973
2N1974
2N1975
2N1986
2N1987
2N1990
2N2008
2N2017
2N2018
2N2019
2N2020

GE
GE
GE
GE
GE
GE
GE
GE

2N2021
2N2023
2N2024
2N2025

2N2026
2N2027
2N2028
2N2029
2N2030
2N2033
2N2034
2N2035
2N2036
2N2038
2N2039
2N2040
2N2041
2N2049
2 N 2060
2N2060A
2N2102
2N2102A
2N2108
2N2150
2N2151
2N2160
2N2162
2N2163
2N2185
2N2186
2N2187
2N2192

2N2192A
2N2192B
2N2193
2N2193A
2N2193B
2N2194
2N2194A
2N2194B
2N2197
2N2198
2N2217
2N2218
2N2218A
2N2219
2N2220

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page

Replacement

GE
GE
GE
GE
GE

2N2221
2N2221

SIG

2N2221A
2N2222
2N2222
2N2222A
2N2239

SIG
SIG

TRAN

PWR TRAN
TRAN
TRAN

PWR TRAN
SIG

TRAN

PWR TRAN

GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR

653
653
653
653
653
653
653

GE

SCR

333

SCR
SCR
SCR
SCR

333
333
333
333

D40E5

1109

2N2326
2N2326A
2N2327
2N2327A
2N2328
2N2328A
2N2329
2N2330
2N2339
2N2344

D40E5
D40E5
D40E5
D40E5
D40E5
D40E7
D40E7
D40N1
D40E1
D40E1

1109
1109
1109
1109
1109
1109
1109
1117
1109
1109

2N2345
2N2346
2N2347
2N2348
2N2410
2N2443
2N2483
2N2537
2N2538
2N2573

GE
GE
GE
GE

D40E7
D40N1
D40E5
D44Q1

1109
1117
1109
1157
1157
1157
1157

2N2574
2N2575
2N2576
2N2577
2N2578
2N2579
2N2594
2N2619
2N2632
2N2646

GE
GE
GE
GE
GE
GE

2N2647
2N2653
2N2657
2N2699
2N2711
2N2712
2N2713
2N2714
2N2723
2N2724
2N2787
2N2788
2N2828
2N2829
2N2840
2N2846
2N2848

GE
GE

D42C8
D42C8
044C7
D44C8
D40E5

1135
1135
1147
1147
1109

D40E7
D40E5
D40E7
D40E7
D40E7
340E7
D42R3
D42R3
D40E5
D44Q1

1109
1109
1109
1109
1109
1109
1139
1139
1109
1157

D44Q1

1157

2N2856-1

D40E1
340E1
D41E1
D41E1
D41E1
D40E5
D40E5
D40E5

1109
1109
1129
1129
1129
1109
1109
1109

2N2863
2N2864
2N2868
2N2875
2N2876
2N2877
2N2878
2N2883
2N2884

D40E7
D40E7
340E7
D40E7
D40E7
D40E7
344C7
340E5
340E5
340E5

1109
1109
1109
1109
1109
1109
1147
1109
1109
1109

2N2888
2N2889
2N2906
2N2907
2N2923
2N2924
2N2925
2N2926
2N2927
2N2941

340E7
340E5
340E5
3ES2221
340E5

1109
1109
1109
1195
1109
1197
1195
1109
1197
1109

2N2947
2N2948
2N2949
2N2950
2N3015
2N3016
2N3017
2N3021
2N3022
2N3023

3ES2221A
3ES2222
340E5

3ES2222A
340E5

PWR TRAN
PWR TRAN

GE

GE
GE

GE
GE
GE
GE

GE

CF= CONTACT FACTORY

10

GE
GE

GE
GE
GE
GE

Page

Type
D40E5
D40E5

1109

D40E1

1109
1147

D44C4

109

D40E1
D40E1

1109
1159
1199
1109
1109

D40E1

1109

D44C8

1147

D42C7
D42C8

1135
1135

D40C7
D40C7

1101
1101

D40E7
D40E7
D44C5
D44C8

1109
1109
1147
1147

D40E5
D40E5
D42C5
D42C3
D42C5

1109
1109
1135
1135
1135

D42C5
D40E5
D40E5
D40D
D45C8
D42C7
D44C8
D44C6
D40E5
D40E5

1135
1109
1109
1105
1163
1135
1147
1147
1109
1109

GES2906
GES2907

1201

D41E5
D44R1

1129
1159

D44C7
D44C4

1147
1147
1109
1109
1109
1105
1105
1163
1163
1163

PWR TRAN
PWR TRAN

D40E1
D44R1

TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR
SCR
SCR
PWR TRAN
SCR
PWR TRAN
UJT TRAN
UJT TRAN
SCR
PWR TRAN
PWR TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
UJT TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

GES2483

SIG

2N2853-1
2N2854-1
2N2855-1

332

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

GE
GE
GE
GE
GE
GE
GE
GE

653
653
653
653
653
653
653
653

1109

712
712
712
712
712

SCR

PWR TRAN
PWR TRAN

D40E7

D44Q3
D44Q1
D44Q3

Page

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

1147
1109

712
712
712

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Mfg. Prod. Line

D44C8
D40E7

707
707
707

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
GE

2N2270
2N2297
2N2322
2N2322A
2N2323
2N2323A
2N2324
2N2324A
2N2325
2N2325A

707
707
707
707
707

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
GE
GE
GE

Type

Page

328
675
328
328
675
328
328
675

PWR TRAN
PWR TRAN
PWR TRAN
GE
GE
GE
GE
GE
GE
GE
GE

Type

GE

Suggested

GE

Replacement

874
874
874
874
874
874
874

322
337
337
671

CF

341
341
343
343

348

CF
CF
1203

350
350
350
351

M0E5
D40E5
D40E5
D40D7
D40D7
D45C5
D45C2

D45C6

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

2N3024
2N3025
2N3026
2N3053
2N3053
2N3054
2N3072
2N3091-96

PWR
PWR
PWR
PWR

TRAN
TRAN
TRAN
TRAN
SIG TRAN
PWR TRAN
PWR TRAN
IR

2N3107
2N3108

2N31 14
2N31 18

GE

GE
GE
GE
GE

GE
GE
GE
GE

2N3393
2N3394
2N3395
2N3396
2N3397
2N3398
2N3402
2N3403
2N3404
2N3405

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

2N3414
2N3415
2N3416
2N3417
2N3418
2N3420
2N343A
2N3440
2N3444
2N3464
2N3467
2N3468
2N3469
2N3485
2N3486
2N3500
2N3506
2N3507
2N3512
2N3525

GE
GE
GE
GE

2N3526
2N3528
2N3529
2N3553
2N3554
2N3565
2N3566
2N3567
2N3568
2N3S69

TRAN
TRAN
TRAN
TRAN
TRAN

GE
GE
GE

TRAN
TRAN
TRAN
TRAN

TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
PWR TRAN
SCR
SCR
PWR TRAN
PWR TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG
SIG
SIG

D44C7
D44C7
D45C5
D45C8
D45C4
D45C7
D44C5

1147
1147
1163
1163
1163
1163
1147

D42C7
D41E1

1135
1129

2N3630
2N3632
2N3633
2N3638
2N3638A
2N3649
2N3649
2N3650
2N3650
2N3651

GE
GE
GE
GE
GE

D41E5
D40E5
D40E5

1129
1109
1109

D40E5

1109

2N3651
2N3652
2N3652
2N3653
2N3653
2N3654
2N3654
2N3655
2N3655
2N3656

2N3656
2N3657
2N3657
2N3658
2N3658
2N3659
2N3660
2N3661
2N3662
2N3663

747

SCR
SCR
SCR
SCR

SIG
SIG
SIG
SIG

D44R1
040E7
D40E7
D41E5
D41E5
040E1
D44C7
D44C7

2N3620
2N3621
2N3622
2N3623
2N3624
2N3625
2N3626
2N3627
2N3628
2N3629

CF
CF
CF
CF

D44C4
D40E1
D40E1
D40E1
D40E7
D40E5
D40E5

1109
1109
1109
1109
1109
1109

353
354
354
356
356
356
359
359
359
359

2N3668
2N3669
2N3670
2N3675
2N3678
2N3702
2N3703
2N3704
2N3705
2N3706

361
361
361
361
361
361
361
361

2N3712
2N3719
2N3720
2N3721
2N3722
2N3724
2N3724A
2N3725
2N3725A
2N3734

D42C8
D42C8
D40E5
D44R2
D40E7
D42C4

135
135
109
159
109
135

D41E5
D41E7
D42C3
D41E5
D41E5
D44R2
D42C6
D42C6
D40E5

129
129
135
129
129
1159
1135
135
109

2N3735
2N3738
2N3739
2N3740
2N3740A
2N3742
2N3744
2N3745
2N3747
2N3748

D42R1

1139

D42C7
D42C7
3ES3565
3ES3566
GES3567
3ES3568
3ES3569

1135
1135

2N3753
2N3754
2N3755
2N3756
2N3757
2N3758
2N3759
2N3760
2N3761
2N3762

747

747
747

11

Page Type

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
TRAN
TRAN

SIG
SIG

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

783
783
783
783
783
783
783
783
783
783

GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR

783
783
783
783
783

GE
GE
GE

SCR
SCR
SCR

GE

GE
GE
GE
GE
GE
GE
GE
GE
GE

TRAN
TRAN

=WR TRAN
5
WR TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
>WR TRAN
WR TRAN
PWR TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

PWR TRAN

1109
1159
1159
1159
1159
1159
1159
1159
1159
1135

D42C2
D44C6
D44C6
D42C6
042C6
D44C6
D44C6
D42C8
D42C8
D44C8

1135
1147
1147
1135
1135
1147
1147
1135
1135
1147

D44C8
D44C5
D44C5
MPS3638

1147
1147
1147
CF
CF

783
783
783
783
783

PWR TRAN
PWR TRAN
PWR TRAN
SIG
SIG

Page

D40E5
D44R2
D44R2
D44R4
D44R2
D44R1
D44R2
D44R1
D44R2
D42C6

MPS3638A

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

GE
GE

GE

Replacement

Mfg. Prod. Line

CF
CF
1159
1109
1109
1129
1129
1109
1147
1147

D40E5

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

2N3298
2N3299
2N3300
2N3309
2N3326
2N3375
2N3390
2N3391
2N3391A
2N3392

Type
2N3569
2N3583
2N3584
2N3585
2N3590
2N3591
2N3592
2N3593
2N3594
2N3619

C50

SCR

Page
1163
1163
1163
1109
CF
1147
CF
707
CF
CF

GES3053
D44C8

SCR

PWR
PWR
PWR
PWR
PWR

Type
045C8
D45C6
D45C8

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

2N3109
2N3110
2N3119
2N3120
2N3121
2N3122
2N3138
2N3140
2N3142
2N3144
2N3199
2N3200
2N3205
2N3206
2N3226
2N3228
2N3229
2N3244
2N3245
2N3252
2N3253
2N3269
2N3270
2N3271
2N3272
2N3295
2N3296
2N3297

Page

mm
mm
::::::

::::::

::::
::::::
;;;;

mm
::::::

Hi:
::::::
::::::
:':'::::

::::::

!"
::s:h
;;;:
:::::

""!:
::::::

"!!!
::::::
::::::
::::::
::::::

D44R1
D43C3
D43C8

159
143
143

365
365
874
874
874

D42C7
D41E7

MPS3702
MPS3703
MPS3704
MPS3705
MPS3706

135
129

360
360
.163

1363
1363

D43C6
D43C8

1159
1143
1143

D41E7
D41E1
041E1
040E7
D40E7
D40E5

1129
1129
1129
1109
1109
1109

D40E7
D42R1
D42R2
D45C7
D45C7
D40N3
D44C5
D44C8
Q44C6

1 109
1139
1139
1163
1163
1117
1147
1147
1147
1147

D44R1
369

044C8
CF
CF
CF
CF
CF
CF
CF
CF
CF

D43C6

1143

Suggested GE
Replacement

Type

:::::::

!:::::

[;;
;::::::
[;
!::::

:::::::
:::::::

!S!!"S
llllili
;;;;;;;
t'SSSSS
!::::::
;;;;;;;
>*!

:::::::

|:;:::i

:::::::
::::::
!*

:::::::
'!*
I::::::
:::::::
is:::::

2N3763
2N3766
2N3818
2N3829
2N3830
2N3831
2N3843
2N3843A
2N3844
2N3844A

Mfg. Prod. Line

Page

PWR
PWR
PWR
PWR
PWR
PWR
GE
GE
GE
GE

2N3845
2N3845A
2N3852
2N3853
2N38S4
2N3854A
2N3855
2N3855A
2N3856
2N3856A

GE
GE

2N3858
2N3858A
2N3859
2N3859A
2N3860
2N3867
2N3868
2N3870
2N3871
2N3872
2N3873
2N3877
2N3877A
2N3878
2N3896
2N3897
2N3898
2N3899
2N3900
2N3900A
2N3901
2N3903
2N3904
2N3905
2N3906
2N3916
2N3917
2N3918
2N3919
2N3923
2N3924
2N3925
2N3926
2N3927
2N3936
2N3937
2N3938
2N3939
2N3940
2N3945
2N3948
2N3961
2N4012
2N4026
2N4027
2N4028
2N4029
2N4030
2N4032
2N4036
2N4037
2N4040
2N4041
2N4046
2N4047
2N4047
2N4054
2N4055
2N4056
2N4057
2N4064
2N4069
2N4073
2N4101
2N4103
2N4111
2N4123
2N4124
2N4125
2N4126

GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SIG TRAN
SIG TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
PWR TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN

Suggested
Page

Page

Type

Mfg. Prod. Line

D41E1
D40E7
D40E5

1143
1147
1147
1129
1109
1109

2N4127
2N4128
2N4152
2N4153
2N4154
2N4155
2N4156
2N4157
2N4158
2N4159

GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

862
862
862
862
862
862
862
862

D42C6
D42C5

1135
1135

2N4160
2N4161
2N4162
2N4163
2N4164
2N4165
2N4166
2N4167
2N4168
2N4169

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

862
862
862
862
862
862
862
CF
CF
CF

2N4170
2N4171
2N4172
2N4173
2N4174
2N4175
2N4176
2N4177
2N4178
2N4179

GE
GE
GE
GE
GE

CF
CF
CF
CF
CF
862
862
862
862
862

2N4180
2N4181
2N4182
2N4183
2N4184
2N4185
2N4186
2N4187
2N4188
2N4189

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

109

2N4190
2N4191
2N4192
2N4193
2N4194
2N4195
2N4196
2N4197
2N4198
2N4226
2N4226
2N4231
2N4232
2N4234
2N4235
2N4236
2N4237
2N4238
2N4240
2N4248

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

1109
1135
1109
1129
1129
1129
1129
1129
1129
1129

2N4256
2N4271
2N4296
2N4297
2N4307
2N4308
2N4311
2N4312
2N4314
2N4316

GE

GE

SCR

CF

1129
1135
1135
1109
1109
1109
1117
1117
1117
1117

2N4317
2N4318
2N4349
2N4350
2N4387
2N4388
2N4400
2N4401
2N4402
2N4403
2N4409
2N4410
2N4424
2N4425
2N4428
2N4429
2N4430
2N4440
2N4441
2N4442

GE
GE

SCR
SCR

CF
CF

Type
D43C8
D44C8
D44C7

370
370
370
370

370
370
374
374
374
374
374
374

382
387
382
387
382

D43C6
D43C8

1143
1143

874
874
874
874
391
391

D44C8

1147

874
874
874
874
393
393
395
397
397
401
401

D44R2
D44C8
D44C8
D42C8
D44R1

1159
1147
1147
1135
1159

D40E1
D42C1
040E1
D44C1

1109
1135
1109
1147

D40E5

CF
CF
CF
CF
CF

D40E1

D42C4
040E5
D41E5
D41E7
D41E5
D41E7
D41E5
D41E5
D41E7
D41E5
D42C4
D42C4
D40E5
D40E7
D40E7
D40N3
D40N1
D40N1
D40N1
D44R2
D44R2
D40E7
747
CF

D44C8

GE

Replacement

1159
1159
1109
CF
1147

405
405
409
409

CF= CONTACT FACTORY

12

PWR TRAN
PWR TRAN

GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE

GE
GE

D44C5
044C4

1147
1147

D42C6

1135

D42C8
D44C6
D44C8

1135
1147
1147
1129
1129
1129
1105
1109
1159
CF

CF
CF
CF
CF
CF
CF
CF
CF
CF

D41E1
041E5
041E7
040D
D40E7
D44R4
GES4248

413

D44R1
D44R2
D44R2

D42C8
D42C8
D42C8
042C8
D41E7

PWR
PWR
PWR
PWR

TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR

Page

862
862
862
CF
CF
CF
CF
CF
CF
CF

PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

Type

1159
1159
1159
1135
1135
1135
1135
1129

D45C5
045C8

1109
1109
1163
1163

D42C2
D40E5
D40E5
040E5

1135
1109
1109
1109

D40E1
D40E5

415
415
418
418
421
421

423
423

747
747

GE

Suggested

Suggested

Replacement
Type

Mfg. Prod. Line

2N4443
2N4444
2N4877
2N4890
2N4898
2N4899
2N4910
2N4911
2N4918
2N4919

GE
GE

2N491

2N491A
2N491B
2N4920

2N494A
2N494B
2N494C
2N494C
2N4976
2N4983
2N4984
2N4985
2N4986
2N4987
2N4988
2N4989
2N4990
2N4991
2N4992
2N4993
2N5022
2N5023
2N5034
2N5035

2N5036
2N5037
2N5058
2N5059
2N5060
2N5061
2N5062
2N5063
2N5064
2N5079
2N5080
2N5088
2N5089
2N5112
2N5160
2N5161
2N5164
2N5165
2N5166
2N5167
2N5168
2N5169
2N5170
2N5171
2N5172
2N5174
2N5175
2N5176
2N5189
2N5190
2N5191
2N5192
2N5193
2N5194
2N5195
2NS204
2N5205
2N5206
2N5207

Type

GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
UJT TRAN
UJT TRAN
UJT TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
PWR TRAN
SWITCH
SWITCH
SWITCH
SWITCH
SWITCH
SWITCH
SWITCH
SWITCH
SWITCH
SWITCH
SWITCH
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE

D42C7
D41E5
D45C5
D45C8
D44C5
D44C8
D45C5
D45C8
298
298
298

D45C11
D44C4
D44C7
D44C10
D40N1
D44R2
D40N1

1163
1147
1147
1147
1117
1159
1117

D40N1

1117

298
298
298
304
304
298
298
298
298

D40E1

1109

427
431
431
427
435
439
439
435
443
447
451

D41E7
D41E1

1129
1129
1155
1155

D44H4
D44H4
D44H8
D44H8
D44R2
D44R4

1155
1155
1159
1159

455
455
455
455
455

D40E5

1109

D40E5

1109

TRAN
TRAN
'WR TRAN
>WR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
PWR TRAN

Mfg.

2N5219
2N5220
2N5221
2N5223
2N5225
2N5226
2N5227
2N5232
2N5232A
2N5249

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

2N5249A
2N5252
2N5253
2N5262
2N5279
2N5293
2N5294
2N5295
2N5296
2N5297
2N5298
2N5305
2N5306
2N5306A
2N5307
2N5308
2N5308A
2N5309
2N5310

GE

GE
GE
GE
GE
GE
GE
GE
GE

2N5321

298
298
304
304

PWR TRAN
SIG
SIG

Type

1135
1129
1163
1163
1147
1147
1163
1163

WR TRAN

GE
GE

Page

747
862

PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR

2N4921
2N4922
2N4923
2N4924
2N4925
2N4926

2N4927
2N492
2N492A
2N492B
2N492C
2N492C
2N493
2N493A
2N493B
2N494

SCR
SCR

Page

163
129
163

CF
CF
CF
CF
CF
CF
CF
CF
461
462
462
462

342C6
D44C6
D44C8
344C11
344C6
544C8
345C11

)40E7

135
147

1147
1147
1147
1147
1163

GE
GE
GE
GE
GE

2N5367
2N5368
2N5369
2N5370
2N5371
2N5372
2N5373
2N5374
2N5375
2N5380

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

2N5381
2N5382
2N5383
2N5418
2N5419
2N5420
2N5421
2N5422
2N5423
2N5424

GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE

2N5493
2N5494
2N5495
2N5496
2N5497
2N5567
2N5568
2N5569
2N5570
2N5571

109

13

Prod. Line

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG

FRIAC
rRIAC
rRIAC
TRIAC
fRIAC
TRIAC

Page

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

Page

;;;

:::::

JJJII!

476

D44R3
D44R4
D42C7
D44R4
D44C10
D44C10
D44C8
D44C8
D44C12
D44C12

1159
1159
1135
1159
1147
1147
1147
1147
1147

:::::!
:::*!

I:::::

:::::!
{::::;
iiijjj

**!

D42C7

1135

D42C8
D43C7
D42C7
D44R1
044R3

1135
1143
1135
1159
1159

490
490
490
498
498
498

GES5368
GES5369
GES5370
GES5371
GES5372
GES5373
GES5374
GES5375
CF GES5380
CF GES5381
CF GES5382
CF GES5383
506
506
506
D40E1
D40E1
D42C1
D44C1

D44H10
D44H11

1209
1209
1209
1209
1211
121
121
121

109
109
135
147
155
156

1393
1393
1393
1393
1393
1393

GES5447
GES5448

1213
1213

GES5449
GES5450
GES5451
D40E7

1215
1215
1215
1109
1109
1147
1135
1155
1155
1155

D40E1

D44C1
D42C2
D44H4
D44H4
D44H10

D44H10
344H4
J44H4
344H10

D44H10
1393
1393
1393
1393
1393

iiiiii

1147

476
476
476
482
482
482
486
486

TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
GE
GE
GE
GE
GE

Type

467
468
469
470
471
472
473
474
474
476

SIG
5IG

2N5449
2N5450
2N5451
2N5470
2N5471
2N5483
2N5489
2N5490
2N5491
2N5492

463
463
463
463
I

2N5322
2N5323
2N5334
2N5344
2N5345
2N5354
2N5355
2N5356
2N5365
2N5366

2N5427
2N5428
2N544I
2N5442
2N5443
2N5444
2N5445
2N5446
2N5447
2N5448

457
457

D45C4
D41E5
D45C5

GE

Replacement

1155
1155
1155
1155
1155

:::::;
::::::

imu
:*
Willi
!!*
;;;;;;

::::::

WllW
::::::
llllll

Willi
!!!*!

::::::
::!!!:

::::::
::::::
.**!
:::::::

::::::
::::
:::.::
;;;;;;;

::::::
;::::::

Type

Mfg. Prod. Line

2N5572
2N5573
2N5590
2N5597
2N5598
2N5606
2N5614
2N5637
2N5642
2N5644
2N5645
2N5646
2N5655
2N5656
2N5660
2N5661
2N5662
2N5663
2N5682
2N5687
2N5688
2N5689
2N5690
2N5697
2N5698
2N5699
2N5700
2N57Q1
2N5703
2N5704

GE
GE

2N5705
2N5710
2N5711
2N5712
2N5713
2N5754
2N5755
2N5756
2N5764
2N5765

2N5766
2N5767
2N5768
2N5777
2N5778
2N5779
2N5780
2N5782
2N5783
2N5785
2N5786
2N5810
2N5811
2N5812
2N5813
2N5814
2N5815
2N5816
2N5817
2N5818
2N5819
2N5820
2N5821
2N5822
2N5823
2N5824
2N5825
2N5826
2N5827
2N5828
2N6000
2N6001
2N6002
2N6003
2N6004
2N6005
2N6006
2N6007
2N6010
2N6011
2N6012
2N6013
2N6014
2N6015
2N6016
2N6017
2N6021
2N6022
2N6023
2N6024

TRIAC
TRIAC

Page

TRIAC
TRIAC
TRIAC

GE
GE
GE

D40E1

1147
1163
1147
1147
1147
1147
1147
1109

2N6025
2N6026
2N6027
2N6028
2N6034
2N6035
2N6036
2N6037
2N6038
2N6039

D42C1
D44C1
D42R1
D42R2
D44R2
D44R4
D44R1
D44R3
D44R2
D40E1

1135
1147
1139
1139
1159
1159
1159
1159
1159
1109

2N6068
2N6069
2N6070
2N6071
2N6072
2N6073
2N6074
2N6075
2N6076
2N6076

D42C1
D44C4
D44C1
D40E1
D40E1
D40E1
044C1
044C1
D40E1
D44C1

1135
1147
1147
1109
1109
1109
1147
1147
1109
1147

2N6098
2N6099
2N6100
2N6101
2N6102
2N6103
2N6106
2N6107
2N6108
2N6109

D44C1
D40E1
D40E1
D44C4
D44C1

1147
1109
1109
1147
1147

D40E5
D44C1

1109
1147

2N6110
2N6111
2N6114
2N6115
2N6121
2N6122
2N6123
2N6124
2N6125
2N6126

D40E5
D40E1
D44C1

1109
1109
1147

D44C2
D45C8
D44C8
D44C8
D44C9
D44C5
D44C4

1377
1377
1377

PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
GE

Type

1393
1393

PWRTRAN
PWRTRAN
PWRTRAN
PWR TRAN
PWRTRAN
PWRTRAN
PWR TRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWR TRAN
PWRTRAN
PWR TRAN
PWRTRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
PWRTRAN
GE
GE
GE

Replacement

Page

Type

Mfg. Prod. Line

Page

PWR TRAN
PWR TRAN
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE

TRAN
TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

510
510

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

CF
CF
CF
CF
CF
CF
CF
CF
461

SIG
SIG

TRAN
TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

SIG
SIG

PWR
PWR
PWR
PWR
PWR
PWR

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN

D42C5
GES5810
GES5811
GES5812
GES5813
GES5814
GES5815
GES5816
GES5817
GES5818

1135
1217
1217
1217
1217
1219
1219
1219
1219
1219

2N6143
2N6144
2N6145
2N6146
2N6147
2N6151
2N6152
2N6153
2N6154
2N6155

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1381
1381
1381
1381
1381

SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

GES5819
GES5820
GES5821
GES5822
GES5823
GES5824
GES5825
GES5826
GES5827
GES5828

1219
1223
1223
1223
1223
1227
1227
1227
1232
1234

2N6156
2N6157
2N6158
2N6159
2N6160
2N6161
2N6162
2N6163
2N6164
2N6165

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1381

SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

GES6000
GES6001
GES6002
GES6003
GES6004
GES6005
GES6006
GES6007
GES6010
GES6011
GES6012
GES6013
GES6014
GES6015
GES6016
GES6017
D45C11
D45C11
D45C5
D45C5

1236
1240
1236
1240
1244
1248
1244
1248
1252
1256

2N6167
2N6168
2N6169
2N6170
2N6171
2N6172
2N6173
2N6174
2N6175
2N6176
2N6177
2N6178
2N6179
2N6180
2N6181
2N6218
2N6219
2N6220
2N6221
2N6222

GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

SIG
SIG
SIG
SIG
SIG
SIG

SIG
SIG
SIG
SIG
SIG
SIG

PWRTRAN
PWR TRAN
PWR TRAN
PWR TRAN

1252
1256
1264
1260
1264
1260
1163
1163
1163
1163

CF= CONTACT FACTORY

14

GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393

345E1

1167
1

167
167

151

1151
1151

461

1155

155
155
155
155
155

171

1
1
1
1

1171
171

1171

D45H1
045H1

1171
1171

D45H4
D45H7
D45H10
D44H4
D45H7
D45H10

1171
1171
1171
1155
1171
1171

D44H4
D44H7
D44H10
D45H4
D45H7
D45H10

1155
1155

040N1
D40N5
D40N3
D44C10
D44C5
045C10
D45C5
GES6218
GES6219
GES6220
GES6221
GES6222

1117
1117

155
1171
1171
1

171

1393
1393
1393
1393
1393
1393
1393
1393
1393
874
874
874
874
868
868
868
868

PWR
PWR
PWR
PWR
PWR
PWR
PWR
SIG
SIG
SIG
SIG
SIG

1163
1163

514
514

1143
1135
1135

PWRTRAN
PWRTRAN
PWR TRAN
PWRTRAN

508
508
508
508

D45C8
D45C8

2N6076
D44H7
D44H7
D44H10
D44H10
D44H4
D44H4
D45H10
D45H10
D45H4
D45H4

D43C5
D42C7
D42C6

TRAN
TRAN
TRAN
TRAN

Page

Type

345E2
D45E3
D44E1
D44E2
D44E3

2N6129
2N6130
2N6131
2N6132
2N6133
2N6134
2N6139
2N6140
2N6141
2N6142

SIG
SIG
SIG
SIG

GE

Suggested

Suggested GE
Replacement

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

1117
1147
1147
1163
1163
1268
1268
1268
1268
1271

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

2N6224
2N6288
2N6289
2N6290
2N6291
2N6292
2N6293
2N6294
2N6296
2N6296

2N6297
2N6342
2N6342A
2N6343
2N6343A
2N6344
2N6344A
2N6346
2N6346A
2N6347

2N6347A
2N6348
2N6348A
2N6386
2N6387
2N6388
2N6394
2N6395
2N6396
2N6397
2N6398
2N64O0
2N6401
2N6402
2N6403
2N6404
2SA257
2SA258
2SA527
2SA528

2SA547
2SA565
2SA571
2SA597
2SA613
2SA671
2SA715
2SA738
2SA743
2SA743A
2SA755
2SA779
2SA780A
2SC1012A
2SC101A
2SC1024
2SC1061
2SC106
2SC107
2SC108A
2SC109A
2SC1104
2SC1105
2SC1162
2SC1212
2SC1212A
2SC130
2SC1368
2SC1419
2SC1514
2SC1516
2SC1517A
2SC213
2SC214
2SC215
2SC223
2SC224
2SC225
2SC23
2SC24
2SC291
2SC292
2SC297
2SC298
2SC306
2SC307
2SC310
2SC354
2SC490
2SC491

Page

TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
SIG

GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1381
1381
1381
1381
1381
1381
1381
1381
1381

GE
GE
GE

TRIAC
TRIAC
TRIAC

1381
1381
1381

PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR

763
763
763
763

Gt
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR

763
CF
CF
CF
CF
CF

Page

GES6224
D44H1
D44H1
D44H4
D44H4
D44H10
D44H10
D44E2
D44E3
D45E2

1155
1155
1155
1155
1155
1155
1151

D45E3

1167

D44E1
D44E2
344E3

GE
GE
GE
GE

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

Type

Type

1271

2SC5120
2SC512R
2SC5130
2SC513R
2SC515
2SC516
2SC516A
2SC517
2SC51
2SC524

1151

1167

2SC525
2SC541
2SC543
2SC547
2SC548
2SC549
2SC550
2SC551
2SC552
2SC553

2SC554
2SC571
2SC572
2SC573
2SC582
2SC585
2SC591
2SC592
2SC597
2SC598

1151
1151
1151

343C5
343C5
D43C5
343C5

1143
1143
1143
1143

2SC599
2SC59
2SC600
2SC608T
2SC609T
2SC61
2SC635
2SC636
2SC637
2SC638

343C8
341E5
341E5
341E5
D45C6
345C9
D43C3

1143
1129
1129
1129
1163
1163
1143
1143
1143
1143

2SC646
2SC685
2SC685A
2SC686
2SC688
2SC690
2SC691
2SC692
2SC697
2SC700

D42C7
042C7
B40E7

1143
1143
1143
1117
1147
1147
1147
1135
1135
1109

2SC702
2SC703
2SC704
2SC730
2SC737
2SC756
2SC774
2SC777
2SC781
2SC788

D40E7
344R4
340N4
342C3
342C5
342C11
340E7
342C3
)42C6
)40N3

1109
1159
1117
1135
1135
1135
1109
1135
1135
1117

2SC795
2SC799
2SC802
2SC803
2SC816
2SC821
2SC822
2SC830
2SC831
2SC840

)42C3
)42C11

42C8
42C8

1135
1135
1109
1109
1109
1109
1109
1109
1135
1135

2SC867
2SC890
2SC891
2SC892
2SC893
2SC909
2SC911
2SC916
2SC92
2SC931

42C5
42C7
42C7
42C8
40E5
40E5
44R
42C5
44C5
44C1

1135
1135
1135
1135
1109
1109
1159
1135
1147
1147

2SC932
2SC93
2SC94
2SC97
2SC990
2SC996
2SD120
2SD121
2SD130
2SD136

D43C3
D43C5
D43C11
D43C6
D43C3
D43C11
D40N1
D44C8
D44C8
D44C9

)40E1
)40E1
)40E1
)40E1
140E1
40E1

GE

Replacement

15

Mfg.

Prod. Line

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

Page

Type
D42C8
D42C7
D42C5
D42C4
D44R4
D40E7
D44R1
D42C7

Page

D40C7

1135
1135
1135
1135
1159
1109
1159
1135
1109
1101

D40E5
D40E1
D44C5
D40E5
D40E1
D40E5
D44C7
D44C1
D44C5
D40E1

1109
1109
1147
1109
1109
1109
1147
1147
1147
1109

D40E1
D40E1
D42C1
D44C3

1109
1109
1135
1147
1117
1147
1147
1135
1109
1109

D40E1

D40N3
D44C5
D44C7
D42C8
D40E5
D40E5
D44C5
D40E7
D44C5
D40E5
D40E5
D40E1

D42C7
D44C5
D40E1
D44C1

D44C8
D40N3
D40N3
D40N2
D44C5
D44C4
D42C4
D42C5
D40E1
D40E5

D42C1
D44C1
D44C1
D40E5
044C5

042C6
040E5
D40E7
D40E6
D44R1

D40N1
D42C6
D40E5
D40E5
D40E1
D40E1
D40E1
)44C6

D45C2
D44C8
D44R2
D40E1
D42C1
D44C1

D42C8
D40E5
342C4
342C8
D44C8
342C6
342C3
344C8
)44C7
)40E5
)42C2

)40N3
)40E7
)44C7
)40N1
J40N3

1147
1109
1147
1109
1109
1109
1135
1147
1109
1147
1147
1117
1117
1117
1147
1147
1135
1135
1109
1109

1135
1147
1147
1109
1147
1135
1109
1109
1109
1159
1117
1135
1109
1109
1109
1109
1109
1147
1163
1147

1159
1109
1135
1147
1135
1 109
1135
1135
1147
1135
1135
1147
1147
1109
1135
1117
1109
1147
1117
1117

!:!:::

Hi:::

lllfll

Suggested

Suggested GE
Replacement
Type

;;;;;;

"**:!
J:

*"*::
::
:::::
::':::;

::::::
;;;;;;
::::::
::::::

::::::

""!

::::::
;::;

"II
::::::

"""

;;;;;;
::::::
::::::
*

::::"
::::::
;;;;;;

""II
llllil

Mfg. Prod. Line

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

2SD137
2SD141
2SD142
2SD146
2SD150
2S0152
2SD154
2SD155
2SD156
2SD157
2SD158
2SD159
2SD174
2SD175
2SD182
2SD183
2SD184
2SD185
2SD226
2SD226A

2SD2340
2SD234R
2SD2350
2SD235R
2SD24
2SD28
2SD29
2SD48
2SD49
2SD50
2S057
2SD58
2SD78
2SD79
2SD90
2SD91
2SD92

Page

Page

C230B
C230C
C230C
C230D
C230D
C230E
C38A
C38B
C38C
C38D

874
874
874
874
874
874
683
683
683
683

C220M
C220M
C37M

862
862
679
679

SYN
SYN
SYN
SYN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C230B
C230B
C230C
C230D
C380X500
C380X500
C46U
C46U
C45U
C45U

874
874
874
874
917
917
689
689
689
689

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C46F
C46F

C46A
C46A

689
689
689
689
689
689
689
689
689
689

306
306
306
306
306
306
306
306
862
862

35C050
35C050B
35C050BF
35C050F
35C100
35C100B
35C100BF
35C100F
35C10
35C10B
35C10BF
35C10F
35C110
35C110B
35C110BF
35C110F
35C120
35C120B
35C120BF
35C120F

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN

C45A
C45A
C46PA
C46PA
C45PA
C45PA
C46PB
C46PB
C45PB
C45PB

689
689
689
689
689
689
689
689
689
689

862
862
862
862
862
862
862
862
862
862

35C15
35C15B
35C15BF
35C15F
35C20
35C20B
35C20BF
35C20F
35C25
35C25B

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C46G
C46G
C45G
C45G
C46B
C46B
C45B
C45B
C46H
C46H

689
689
689
689
689
669
689
689
689
689

862
874
862
874
862
862
862
862
862
862

35C25BF
35C25F
35C30
35C30B
36C30BF
35C30F
35C40
35C40B
35C40BF
35C40F

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C45H
C45H
C46C
C46C
C45C
C45C
C46D
C46D
C45D
C45D

689
689
689
689
689
689
689
689
689
689

862
862
862
874
862
862
862
862
862
862

35C50
35C50B
35C50BF
35C50F
35C60
35C60B
35C60BF
35C60F
35C70
35C70B

C46S
C46S

689
689
689
689
689
689
689
689
689
689

35C70BF
35C70F
35C80
35C80B
35C80BF
35C80F
35C90
35C90B
35C90BF
35C90F

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C46E
C46E
C45E
C45E

862
862
862
874
874
874
874
874
874
874

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN

C45S
C45S
C46N
C46N
C45N
C45N
C46T
C46T
C45T
C45T

689
689
689
689
689
689
689
689
689
689

Type

Mfg.

D42C2
D42C2
D44C2
D44C8
D44C5
D42C8
D44C8
D44C8
040N1
D40N8

1135
1135
1147
1147
1147
1135
1147
1147
1117
1117

2SF294
2SF295
2SF296
2SF297
2SF298
2SF299
2SF32A
2SF34A
2SF36A
2SF38A

MITJ
MITJ
MITJ
MITJ
MITJ
MITJ

D44R1
D44R3
D44C6
D44C8
D40E5
D40D7
D44C5
D44C8
D44C5
D44C7

1159
1159
1147
1147
1109
1105
1147
1147
1147
1147

2SF448
2SF451
2SF454
2SF455
2SF457
2SF458
2SF459
2SF71
2SF72
2SF73

MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ

D44C8
D44C8
D44C6
D44C5
D40N3
D44C6
D44C8
D44C8
D44C8
D44C8
D44C3
D44C5
D42C8
D44C8
D44C5
D44C8

1147
1147
1147
1147
1117
1147
1147
1147
1147
1147

2SF74
2SF75
2SF76
2SF77

SHEJ
SHEJ
SHEJ
SHEJ

300PAC"
300PA"

IR

35C025
35C025B
35C025BF
35C025F

1147
1147
1135
1147
1147
1147
1109

D40E5
C220F
C220A
2N681

2SF11
2SF12
2SF131

NECJ SCR
NECJ SCR
TSAJ SCR

2SF132
2SF133
2SF134
2SF135
2SF136
2SF137
2SF138
2SF139
2SF14
2SF16

TSAJ
TSAJ
TSAJ
TSAJ
TSAJ
TSAJ
TSAJ
TSAJ
NECJ
NECJ

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

2SF18
2SF200
2SF201
2SF221
2SF222
2SF223
2SF224
2SF225
2SF226
2SF227

NECJ
NECJ
NECJ
TSAJ
TSAJ
TSAJ
TSAJ
TSAJ
TSAJ
TSAJ

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

2SF228
2SF22
2SF248
2SF24
2SF261
2SF262
2SF263
2SF264
2SF265
2SF266

TSAJ SCR
NECJ SCR
MATJ SCR
NECJ SCR
MITJ SCR
MIT J SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR

C220E

2SF267
2SF268
2SF269
2SF26
2SF271
2SF272
2SF273
2SF274
2SF275
2SF276

MITJ
MITJ
MITJ

SCR
SCR
SCR
NECJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR

C220D
C220D

2SF277
2SF278
2SF279
2SF286
2SF288
2SF289
2SF28
2SF291
2SF292
2SF293

MITJ
MITJ
MITJ
MITJ
MITJ
MITJ

SCR
SCR
SCR
SCR
SCR
SCR
NECJ SCR
MITJ SCR
MITJ SCR
MITJ SCR

Type

Page

Type

2N682
2N683
2N684
2N685
2N687
2N688
2N689
2N689
C220B
C220C
C220D
C220E

C220M
C220U
C220F

C220A
C220B
C220B
C220C
C220D
C230A
C220B
C230B
C220F

C220A
C220B
C220B
C220C
C220C

C220E
C230C
C220F

C220A
C220B
C220B
C220C
C220C
C220D
C220D
C220E
C230C
C230D
C230E
C230D
C230F

C230A
C230B

GE

Replacement

862
862
306

CF = CONTACT FACTORY

16

NECJ
NECJ
NECJ
NECJ

SHEJ
SHEJ
SHEJ

IR

Prod. Line

Page

C37N
C137M
C137S
C137N
C230U
C230F
C230A

C45U
C45F
C46P
C46P
C45P
C45P

C46M
C46M
C45M
C45M

771
771
771

874
874
874

Suggested

GE

Suggested

Replacement
Type
36RA"
36RC"
36REH"
3N81

3N82
3N83
3N84
3N85
3N86
3RC10A
3RC20A
3RC30A
3RC40A
3RC50A
3RC60A

Mfg. Prod. Lin

IR

SCR
SCR
SCR

GE
GE
GE
GE
GE
GE

SWITCH
SWITCH
SWITCH
SWITCH
SWITCH
SWITCH

IR

IR

C11M

PWR TRAN
PWR TRAN

D40E1
D40E1

IR

RECTIFIER

A397

RCA

SCR

C144M30M

IR
IR

IR

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

40281
40282

40290
40291

40292
40305
40306
40307
40309
40310
40311
40312
40314
40315
40316
40317
40319

40320
40321
40323
40324
40327
40346

40346V1
40346V2
40347
40347V1

40347V2
40348
40348V1
40348V2
40355
40360
40361
40362
40366
40367

40407
40412
40412V1
4041 2 V2
40422
40424
40426
40450
40451
40452
40453
40454
40455
40456
40459
40491
40537
40538
40544
40578

322

521

525
525
529

SCR

40250V
40279
40280

40368
40372
40378
40379
40389
40390
40391
40392
40394
40406

C11A
C11B
C11C
C11D

RCA
RCA

SCR
SCR

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

Type

C11E

Mfg. Prod. Line

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

40581
40582
40594
40595
40605
40608
40611
40613
40616
40618

516
516

SCR
SCR
SCR
SCR
SCR

40082

401PDA"

818
689
818

IR

IR

Page

C150
C45
C50

IR

40081

40216
40250

Type

322
322
322
322
322
1109
1109
596

40621
40622
40624
40627

40629
40630

791
1147

40631
40632
40634
40635

1135
1135
1109
1109
1147
1109
1109
1147
1109
1109

40654
40655
40665
40666
40680
40681
40682
40683
40735
40737

D44C8
D40E5
D40E5
D44C5
D40E5
D41E5

1147
1109
1147
1109
1147
1109
1109
1147
1109
1129

40738
40739
40740
40741
40742
40743
40744
40745
40746
40747

D40E5
D44R3
D40E5
D44C5
D40E1
D44R1
044R1
D44R1
D40E5
O40E5

1109
1159
1109
1147
1109
1159
1159
1159
1109
1109

40748
40749
40750
40751
40752
40753
40754
40755
40756
40757

D40E7
D40E7
D40E7
D40E7
D40N1
D40E7
D40E7
D41E7
D41E7
D41E7

1109
1109
1109
1109
1117
1109
1109
1129
1129
1129

40758
40759
40760
40816
40833
40867
40868
40869
40873
40874

D44C6
D42C8
C122B
C122D
D44R2
D41E5
D40E5
D43C5
D41E7

1147
1135
747
747
1109
1159
1129
1109
1143
1129

40875
40876
40877
40878
40881
40882
4d884
40885
40886
40938

RCA

D40E7
D44R2
D44R2
D44R2
D44R4
D44R4
D44R3
D40E5
D40E5
D40E5

1109
1159
1159
1159
1159
1159
1159
1109
1109
1109

40C025
40C025B
40C050
40C050B
40C100
40C100B
40C10
40C10B
40C110
40C110

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

D40E5
D40E1
D40E5
D40E1
D40E5
D44R4
041E5
D41E5
D40E5
D40E1

1109
1109
1109
1109
1109
1159
1129
1129
1109
1109

40C120
40C120B
40C15
40C15B
40C20
40C20B
40C25
40C25B
40C30
40C30B

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

D44C6
D42C5
D42C5
D40E1
D40E1
D44C1
D40E7
D40E7

D44C4
D40E5
D40E5
D44C4
D40E5
D44C5
D40E!

D40E1

GE

Replacement

CF= CONTACT FACTORY

17

RCA
RCA

SCR
SCR

Type
D40E1
D40E1

D42C7
D43C7
D40E5
D40E5
D40E5
044C2
D40E5
D44C2

D44C2
044C6
D44H8
D44H7
044C6
D44C6
D44C6
D44H7
D41E1
D40E7
CI 228

PWR TRAN
PWR TRAN
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA

Page

SCR
SCR
SCR
SCR
SCR
SCR

C122D
D44C4
D40E5
C228A2
C228B2
C228D2

C228M2
C144M15M
C222A
C222B
C222D

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C222M
C220A
C220B
C220D

C220M
C220A2
C220B2
C220D2

RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA

SCR
SCR
SCR

PWR TRAN

D44H8

RCA
RCA
RCA
RCA

SCR
SCR
SCR
SCR

C122M
C122A

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR

C220M2
C232A
C232B
C232D

C232M
C230A
C2308
C2300

C230M
C230A2
C230B
C230D

C230M

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

Page
1109
1109
1135
1143
1109
1109
1109
1147
1109
1147
1147
1147
1155
1155
1147
1147
1147
1155
1129
1109

747
747
1147
1109
868
868
868
868
791

862
862
862
862
862
862
862
862
862
862
862
862
874
874
874
874
874
874
874
874
874
874
874
874
1155
747
747
747
747
1155

C122B
C122D
D44H10
D45H10

1171

D44H7
D45H7
D44H10
D45H10
D44H4
D45H7
D44H10
D40P3
040P5
C137N

1155
1171
1155
1171
1155
1171
1155
1121
1121
771

C147U
C147U
C147F
C147F
C147P
C147P
C147A

C147A
C147PA
C147PA
C147PB
C147PB
C147G
C147G
C147B
C147B
C147H
C147H
C147C
C147C

799
799
799
799
799
799
799
799
799
799
799
799
799
799
799
799
799
799
799
799

Suggested

Suggested

GE

Type

Mfg. Prod. Line

Page

Type

40C40
40C40B
40C50
40C50B
40C60
40C60B
40C70
40C70B
40C80
40C80B

SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN
SYN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C147D
C147D
C147E
C147E

40C90
40C90B
40RCS100
40RCS10
40RCS110
40RCS120
40RCS20
40RCS30
40RCS40
40RCS50

SYN
SYN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

40RCS5
40RCS60
40RCS70
40RCS80
40RCS90

IR

C147T
C147T
C147P
C147A
C147PA
C147PB
C147B
C147C
C147D
C147E
C147F

40RCS"
420PBM"
420PB"

IR

IR
IR
IR
IR
IR
IR
IR

IR
IR
IR
IR
IR
IR

IR

45192
45193
45194
45195

470PB"

IR

4N25
4N25A
4N26
4N27
4N28
4N29
4N29A
4N30
4N31
4N32
4N32A
4N33
4N35
4N36
4N37
4N38
4N38A
4N39
4N40

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

500PBQ"
501PBQ"
50RCS"
550P8Q"
550PB"
5RC10A

IR

5RC20A
5RC30A
5RC40A
5RC50A
5RC60A
600PB"
651PDB"L
700PK"
71RA"

IR

71RB"
71RC"
71REH"

IR

IR
IR
IR
IR
IR

81RM"

C147M

SCR
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
SCR
SCR
SCR
SCR
SCR
SCR

IR

RECTIFIER

IR

SCR
SCR
SCR
SCR
SCR

IR
IR

IR

IR
IR

IR
IR

IR
IR
IR

IR

A14C
A14E
A14F
A14P
A14U

GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

A114A
A114B
A114C
A114D
A114E
A114F

A114M
A115A

C11A

C11M

Page

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

54S
549
549
557

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

563
565
565
565
565
563
565
569
569
569
569
569

559
559
559
559
557
559

A139M. R
A139N, R
A139P. R
A170.170RE
A170.170RA
A17O.170RS
A170.170RT
A170.170RPA
A170.170RPB
A170.170RPC
A170.170RPD

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

1155
1171
1171
1171
93

A170, 170RPE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

571
571
571
571
571
571
571
577
577

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

577
577
577
577
577
577
577
577
577
577

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

577
577
581
581
581
581
581
581
581
581

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

581
581
581
581
581
581
581
584
584
584

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

584
584
584
584
584
584
584
584
584
584

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

584
584
643
643

A115M
A139
A139E, R

A 170 170RB
A170. 170RC
A170, 170RD
A170, 170RM

A177, 177RPO
A177, 177RT

C11B
C11C
C11D
C11E

Prod. Line

799
799
799
799
799
689
982
936
1155
1155

A115B
A115C
A115D
A115E
A115F

A177 177RE
A177 177RP
A177, 177RD
A177, 177RPA
A177, 177RPB

C397
C398
C150
C444
C390/C391

Mfg.

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

799
799
799
799
799
799
799
799
799
799

539
539
541
541

PWR TRAN

91RM"

A15F
A15U

A177, 177RC
A177, 177RPE
A177, 177RS
A177, 177RM
A177, 177RN

RECTIFIER
RECTIFIER

SCR
SCR
SCR

IR

A15A

799
799
799
799
799
799
799
799
799
799

533
533
533
533
533
533
533
535
535
535

SCR
SCR

IR

Type

A 170, 170RN
A 170, 170RP
A177, 177RA
A177, 177RPC
A177, 177RB

SCR

850PK"
900PB"

Page

531
531
531
531
531

PWR TRAN
PWR TRAN
PWR TRAN

82T2

AHA

D44H10
D45H4
D45H7
D45H10
C390/C391

COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL

IR

IR

C147S
C147N
C147T
C45
C447
C390/C391
D44H4
D44H7

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

SCR
SCR
SCR
SCR
SCR
SCR

IR

72T2
73T2
74T2

750PB"
801PDB"
801PDB"B
81RLB"

C147S
C147S
C147N
C147N

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

PWR
PWR
PWR
PWR
PWR
PWR

45190
45191

C147M
C147M

GE

Replacement

Replacement

958
958
818
976
936
322

A 180, 180RA
A 180, 180RN
A180, 180RP
A 180, 180RD
A 180, 180RB
A 180, 180RC
A 180, 180RPD
A 180, 180RPE

322
322
322
322
322

A 180, 180RS
A 180, 180RPA
A 180, 180RT
A180, 180RPB
A 180, 180RM

C602
A437
C450/C451
C150
C160

1005
603
CF
818
818

A 180, 180RE

C150
C50
040E7
D40E7
D40E7
C440/C441
A540/A696
A430
C158
C165
D40E7
C450/C451
C440
C164

818
818
1109
1109
1109
966
610
600
830
838

A187, 187RD
A187, 187RC

A 180, 180RPC
A187, 187RN
A187, 187RM
A187, 187RE

A187 187RS
A187, 187RT
A187, 187RA
A187 187RB
A187, 187RP
A187, 187RPA
A187 187RPC
A187, 187RPB
A187.187RPD
A187.187RPE
A19013
A19015
A190.190RPE
A190.190RT
A190.190RN
A190.190RP
A190.190RPA
A190.190RPD

1109

CF
966
838

547
547
547
547
290
547

CF= CONTACT FACTORY

18

571
571
571
571
571
571
571
571

577

241
241
241
241
241
241

Type

Page

Suggested

GE

Suggested

Replacement
Type

Mfg.

A 190, 190RS
A 190, 190RA
A 190, 190RB
A 190, 190RC
A 190, 190RPB
A 190, 190RPC

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

588

GE

GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

588
588
588
588
588
588
588
588
588
588

GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

588
588
588
588
625

A 190, 190RE
A 190, 190RM
A 190, 190RD
A197, 197RB
A197, 197RT
A197, 197RA
A197, 197RPD
A197, 197RP
A197, 197RPE
A197, 197RS
A197, 197RC
A197. 197RD

A197 197RE
A197, 197RM
A197.197RN
A197.197RPA
A197.197RPB
A197.197RPC
A2011
A202
A203
A208
A210
A211

A245
A246
A247
A2511
A253
A27BR1200

A27DR1200
A27DR521A
A27DR521A
A27DR521B
A270R521B
A27DR521M
A27DR521M
A27MR1200
A270

GE

A430M
A430N
A430P
A430PA
A430PB
A430PC
A430PD
A430PE

D40E1
D40E1

1147
1109
1147
1109
1109

D40E1
D40E1
D40E1

1109
1109
1109

042C2

1135

D44C2

A430PM
A430PS
A430S
A430T
A437E

A437M
A437N
A437P
A437PA
A437PB
A437PC
A437PD
A437PE
A437S
A437T

631

CF
CF
CF
CF
CF

GE
GE
GE
GE

HI-REL
HI-REL
HI-REL
HI-REL

REC
REC
REC
REC

CF
CF
CF
CF

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

A40M, A41M
A430E

D40E1

HI-REL REC
HI-REL REC
HI-REL REC
HI-REL REC
HI-REL REC

GE
GE
GE
GE
GE
GE
GE

Type
A397N
A397P
A397PA
A397PB
A397PC
A397PD
A397PE
A397S
A397T
A40A, A41A
A40B, A41B
A40C, A41C
A40D, A41D
A40E, A41E
A40F, A41F

044C1

PWR TRAN

A276

A397M

RECTIFIER

Page

241
241
241
241
241
241
241
241
241

GE
GE
GE
GE
GE

A277
A278
A279

A390PE
A390S
A390T
A397A
A397B
A397C
A397D
A397E

Type

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

A271
A272
A273
A275

A28A, A29A
A28BR1200
A28BR1201
A28B. A29B
A28C, A29C
A28DR1200
A28DR1201
A28D.A29D
A28F, A29F
A3512
A38BR1200
A38BR1202
A38DR019A
A380R019A
A38DR019B
A38DR019B
A38DR019M
A38DR019M
A38DR1200
A38DR1202
A38MR1200
A390M
A390N
A390P
A390PA
A390PB
A390PC
A390PD

Prod. Line

D40E5
D42C5
D44C4
D44C1
D42C2
D44C3

1109
1135
1147
1147
1135
1147

D44C1
040N1
040N1

1147
1117
1117

A44A, A45A
A44B, A45B
A44C, A45C
A44D, A450
A44E, A45E

A44F,A45F
A44M, A45M
A500L
A500LA
A500LB

Mfg.

Prod. Line

Page

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

596
596
596
596
596
596
596
596
596
230

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

230
230
230
230
230
230
600
600
600
600

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

600
600
600
600
600
600
600
600
600
603

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

603
603
603
603
603
603
603
603
603
603

GE
Gb
GE
GE
GE
GE
Gb
GE
GE
Gb

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

555
555
555
555
555
555
555
607
607
607

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

607
607
607
607
607
607
607
607
607
607

RECTIFIER

551

HI-REL REC
HI-REL REC

CF
CF
551
551
CF

A500LC
A500LD
A500LE
A500LM
A500LN
A500LP
A500LS
A500LT
A500PE

CF

A5O0PM

GE
GE
Gt
Gb
GE
Gt
GE
GE
Gb
GE

551
551
637

A500PN
A500PS
A500PT
A540D
A540E
A540L
A540LA
A540LB
A540LC
A540LD

GE
GE
GE
GE
GE
GE
Gb
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

607
607
607
610
610
610
610
610
610
610

A540M

GE
Gt
Gt
GE
GE
GE
Gb
Gt
GE
Gb

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

610
610
610
610
610
610
610
610
610
610

GE
GE
Gb
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

610
610
610
610
613
613
613
613
613
613

RECTIFIER
RECTIFIER
HI-REL REC
HI-REL REC

RECTIFIER
RECTIFIER
RECTIFIER

REC
REC
REC
REC
REC
REC
REC

CF
CF
CF
CF
CF
CF
CF

HI-REL REC
HI-REL REC
HI-REL REC
HI-REL REC

HI-REL
HI-REL
HI-REL
HI-REL
HI-REL
HI-REL
HI-REL

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

CF
CF
CF
CF
592
592
592
592
592
592

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

592
592
592
592
596
596
596
596
596
596

GE

Replacement

A540N
A540P
A540PA
A540PB
A540PC
A540PD
A540PE
A540PM
A540PN
A540PS
A540PT
A540S
A540T
A570A
A570B
A570C
A570D
A570E

A570M

CF= CONTACT FACTORY

19

Type

Page

Suggested

Suggested GE
Replacement

Type
A596M
A596N

Mfg. Prod. Line

Page

Type

Page

Type

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

616
616
616
616
616
616
616
616
616
619

B3585
B3586
B3588
B3589
B3606
B3607
B3608
B3609
B3610
B3611

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

619
619
619
619
619
619
619
619
619
619

B3612
B3613
B3614
B3747
B3748
B3760

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

619
623
643
643
643
643
234
234
CF
CF

B5031
B5032

A70.A71S
A70.A71T
A72.A73A
A72.A73B

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

A72.A73C
A72.A73D
A72.A73E
A72.A73M
A72.A73N
A72.A73P
A72.A73PA
A72.A73PB
A72.A73S
A72.A73T

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF

BC161
BC286
BC287
BC301
BC312
BC313
BD106
BD107
BD109
BD112

A7811055
AC 130V
AC 14V

GE
GE
GE
GE
GE
GE
GE

CF
545
545
545
545
545
545

BD115
BD124
BD127
BD131
BD135
BD136
BD137
BD138
BD145
BD162

A596P
A596PA
A596PB
A596PC
A596PD
A596S
A596T
A640L
A640P
A640PA
A640PB
A640PC
A640PD
A640PE

A640PM
A640PN
A640PS
A640PT
A640T
A696
A7011
A7012
A7013

A70H

AC250V
AC28V
AC42V
AC56V
AT470
AT471
AT473

AT476
AT477
B 143000
B 143001

B 143003
B 143004
B 143009

B143010
B143011
B143012
B143015
8143016
B143018
B143019
B 143024

B 143025

B 143026
B 143027

B3465
B3466
B3531
B3533
B3537
B3538
B3539
B3540
B3541
B3542
B3543
B3544

B3547
B3548
B3550
B3551
B3570
B3576
B3577
B3578
B3580
B3584

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
GE-MOV

HDW

GEMOV
GEMOV
GEMOV
GEMOV
GE

MOV

GEMOV
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR
PWR

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

Mfg. Prod. Line

B5002
B5021
B5022

BC119
BC120
BC140
BC140C
BC140D
BC141
BC142

BC160

D40E5
D40E7
D40E5

1109
1109
1109

D40E5
040E7

1109
1109
1135
1135
1135
1135
1135
1135
1135
1135

BD163

BD402,3,4,6,6,7

GE
GE

1135
1135
1135
1135
1135
1135
1135
1135
1109
1109

BD5,6,7

GE

D40E5
D40E5
D42C5
D40E5
D40E7
D40E5
D40E5
D40E5
D40E7
D40E7

1109
1 109
1135
1109
1109
1109
1 109
1109
1109
1109

BF109
BF118
BF156
BF157
BF174

D44C8
D44C8
D44C6
D44C8
D42C5
D42C5
D44C7
D44C6
D44C6
044C8

1147
1147
1147
1147
1135
1135
1147
1147
1147
1147

BD1.2.4

GE

BD220
BD221
BD222
BD223
B0224
BD225
BD3

BDY12
BDY13
BDY15A
BDY16A
BDY34
BDY60
BDY61
B0Y62
BF108

BF179A
BF179B
BF179C
BF257
BF258
BF259
BF292A
BF292B
BF292C
BF294
BFS23
BFS50
BFS51

BFX38
BFX39

CF= CONTACT FACTORY

20

Page Type

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

B5001

D42C5
D42C5
D42C3
D42C7
D42C4
D42C4
D42C7
D42C7
D42C5
D42C5
D42C8
042C8
D42C4
D42C4
D42C7
D42C7
D40E7
D40E7

GE

Replacement

TUNNEL DIO
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
TUNNEL DIO
TUN DIODE
TUNNEL DIO
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

Page

044C5
D44C8
D44C6
D44C8
D42C3
D42C6
D42C8
D42C3
D42C6
D42C8

1147
1147
1147
1147
1135
1135
1135
1135
1136
1135

D42C3
D42C6
D42C8

1135
1135
1136
1109
1109
1135
1147
1147
1147
1147

D40E1
D40E1

D42C6
D44C5
D44C8
D44C5
D44C8
D44C6
D44C8
D40E5
D40E5
D40E5
D40E5
D40E7
D40E7
D40E7
D40E7

1147
1147
1109
1109
1109
1109
1109
1109
1109
1109

D41E7
D40E7
D41E7
D40E7
D44R1
D40E5
D42C4
D42C1
044C5
D44C6

1129
1109
1129
1109
1159
1109
1135
1135
1147
1147

D44R1

1159
1147
1159
1147
1135
1143
1135
1143
1147

D44C5
D44R4
D44C5
D42C5
D43C5
D42C7
D43C7
D44C8
044C7

1H7

D44C6

1147

D44C11
D44C6
D44C9
D45C11
D45C6
045C9

1147
1147
1147
1163
1163
1163

D44C6
D44C8
D42C8
D42C8
D42C5
D44C8
D44C8
D44C6
D44R1

1147
1147
1135
1135
1135
1147
1147
1147
1159

D40N1
D40N1
D44R1
D44R1
D40N1
D40N1
040N1
D40N1
D40N1
D40N1
D40N3
D40N1
D40N1
D40N1
D40N2
D42C1
D40E1
D40E1
D41E5
D41E5

1117
1117
1159
1159
1117
1117
1117
1117
1117
1117

651

651
CF
451

1117
1117
1117
1117
1117
1135
1109
1109
1129
1129

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

BFX69
BFX69A
BFX84
BFX85
BFX86
BFX96
BFX96A
BFX97
BFX98
BFY40
BFY41
BFY43
BFY44
BFY51
BFY63
BFY56
BFY57

BFY70
BFY72
BLY12

BLY15A
BLY20
BLY21
BLY33
BLY34
BLY35
BLY36
BLY37
BLY38
BLY53

BLY61
BLY62
BLY63
BLY78
BLY79
BLY88
BLY89
BLY91
BLY92
BLY93

BPW38
BR-100B
BR-101B
BS10-01A
BS10-02A
BS 10-03 A
BS 10-04 A
BS10-0SA
BS10-06A
BS6-01A

Page

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
GE

OPTO DET
PWR TRAN
PWR TRAN

Type

Page

D40E5
D40E5
D40E7
040E7
D40E5
D40E1
040E1
D40E5
D44R2
D40E1

1109
1109
1109
1109
1109
1109
1109
1109
1159
1109

D44R1
D40N1
D40E7
D40E5
D40E1
D40E5
D40N1
D40E5
D40E5

Page

Type

Page

D40E5
D40E7
D40E5
D40E7
C231CX211
C231EX211
C230CX211
C230EX211
C106A1
C106B1

1109
1109
1109
1109
CF
CF
CF
CF
720
720

PHIN
PHIN

SCR
SCR
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

C106C1
C106D1
SC136A
SC136A
SC136B
SC136D
SC136A
SC136A
SC136B
SC136D

720
720
1377
1377
1377
1377
1377
1377
1377
1377

1135
1135
1135
1109
1109
1147
1147
1135
1109
1135

BTL0810
BTR0605
BTR0610
BTR0620
BTR0640
BTR0660
BTR1005
BTR1010
BTR1020
BTR1040

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC143B
SC141B2
SC141B2
SC141B2
SC141D2
S141M2
SC146B2
SC146B2
SC146B2
SC146D2

1381
1381
1381
1381
1381
1381
1381
1381
1381
1381

BTR1060
BTS0605
BTS0610
BTS0620
BTS0640
BTS0660
BTS1005
BTS1010
BTS1020
BTS1040

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC146M2
SC241B
SC241B
SC241B
SC241D

1381

044C3
D44C1
D42C5
D44C6
D44C4

1109
1135
1147
1109
1147
1147
1147
1135
1147
1147

D42C5
D42C8
SC245B
SC245B
SC245D
SC245D
SC245E
SC245M
SC240B

1135
1135
1393
1393
1393
1393
1393
1393
1393

BTS1060
BTS1605
BTS1610
BTS1620
BTS1640
BTS1660
BTS2505
BTS2510
BTS2520
BTS2540

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

BTS2560
BTU0505
BTU0510
BTU0520
BTU0530
BTU0540
BTU0550
BTU0560
BTU0605
BTU0610

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393

BTU0620
BTU0640
BTU0660
BTU1005
BTU1010
BTU1020
BTU1040
BTU1060
BTU1605
BTU1610
BTU1620
BTU1640
BTU1660
BTU2505
BTU2510
BTU2520
BTU2540
BTU2560
BTW30-300RM
BTW30-400RM
BTW30-500RM
BTW30-600RM
BTW30-800RM
BTW31-300RM
BTW31-400RM
BTW31-500RM
BTW31-600RM
BTW31-800RM
BTX0605
BTX0610

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

PHIN
PHIN
PHIN
PHIN
PHIN
PHIN
PHIN
PHIN
PHIN
PHIN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C139M15M
C139N15M

TEC
TEC

TRIAC
TRIAC

SC240B2
SC240B2

D44C3
D42C8
D42C1
D42C8
040E1
D40E1
D44C1
044C1

D42C6
D40E1

D42C2
D40E1
D42C1
D44C1
D40E1
D44C1

CF

BS6-06E
BS7-02A
BS7-04A
BS7-05A
BS8-01A
BS8-02A
BS8-03A
BS8-04A
BS8-05A
BS8-06A

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC141B
SC141D
SC141E
SC245B
SC245B
SC245B
SC245D
SC245E

SC245M

1393
1393
1393
1393
1393
1393

BS9-02A
BS9-04A
BS9-05A

BBC
BBC
BBC

TRIAC
TRIAC
TRIAC

SC143B
SC143D
SC143E

1381
1381
1381

D40E7
D42C6
D40E5
D40E1
D44R1
344R1
D44R1

1109
1135
1109
1109
1159
1159
1159

D42C1

1135
1109
1109
1109
1109
1109
1109
1109
1109
1109

BSX61

TRAN
TRAN
TRAN
TRAN

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SC241B
SC240B
SC241B
SC240D
SC241D
SC240D
SC241D
SC240E
SC241E

BSX22
BSX30
BSX32
BSX46
BSX48
BSX49
BSX58
BSX59
BSX60

BT101-300R
BT101-500R
BT102-300R
BT102-500R

PWR
PWR
PWR
PWR

BT106C
BT106D
BTD0105
BTD0110
BTD0120
BTD0140
BTD0305
BTD0310
BTDO320
BTD0340

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

BSX62
BSX63
BSX91
BSX92

Prod. Line

1159
1117
1109
1109
1109
1109
1117
1109
1109
1147

BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC

BSW28
BSW29
BSW66
BSW67
BSW68

Mfg.

BT106A
BT106B

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

BSV16
BSV60

Type

SCR
SCR
SCR
SCR
PHIM SCR
PHIN SCR

BBC
BBC
BBC
BBC
BBC
BBC
BBC

BS6-01E
BS6-02A
BS6-02E
BS6-03A
BS6-03E
BS6-04A
BS6-04E
BS6-05A
BS6-05E
BS6-06A

GE

Replacement

SC240M
SC241M

340E1
340E5
D40E5
D40E1
340E1
340E1
340E5
340E1

D40E5

1381
1381
1381

OF- CONTACT FACTORY

21

PHIN
PHIN
PHIN
PHIN

SC246B
SC246B
SC246B
SC246D

1393
1393
1393
1393
1393
1393
1393
1393
1393

SC246M

1393

SC251B
SC251B
SC251B
SC251D

393
393
393
393
393
393
393
393
393

SC241M

SC51M
SC261B
SC261B
SC261B
SC261D

SC261M
SC250B
SC250B
SC250B
SC250D
SC250D
SC250E

SC250M
SC240B
SC240B

SC240B
SC240D

SC240M
SC245B
SC245B
SC245B
SC245D

SC245M
SC250B
SC250B
SC250B
SC250D

SC250M
SC260B
SC260B
SC260B
SC260D

SC260M
C141C
C141D
C139E10E

C139M10M
C139N10M

CHOC
C140D
C139E15E

393
393
393
393
393
393
393
393
393
393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
783
783
775
776
775
783
783
775
775
775
1393
1393

Suggested

Suggested GE
Replacement

Type

Mfg. Prod. Line

BTX0620
BTX0640
BTX0660
BTX1005
BTX1010
BTX1020
BTX1040
BTX1060
BTX1605
BTX1610
BTX1620
BTX1640
BTX1660
BTX2505
BTX2510
BTX2520
BTX2540
BTX2560

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

BTX94-100
BTX94-200

PHIN
PHIN

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

BTX94-300
BTX94-400
BTX94-500
BTX94-600

PHIN
PHIN
PHIN
PHIN

TRIAC
TRIAC
TRIAC
TRIAC

PWR
PWR
PWR
PWR
PWR

BUY10
BUY11
BUY24
BUY43
BUY46
C1012

C103A
C103B
C103Q
C103Y
C103YY
C106A
C106B
C106C
C106D
C106E

C106F

C106M
C106Q
C106Y
C107A
C107B
C107C
C107D
C107E
C107F

C107M
C107Q
C107Y
C108A
C108B
C108C
C108D
C108E
C108F

C108M
C108Q
C108Y
C10
C1 OAR 1200
C10BR1200
C10DR1200
C1

12

C116A1
C116B1
CI 16D1

C116E1
C116F1

C116M1
C11

C11AR1200
C11BR1200
C11DR1200
C1212
C122A1
C122B1
C122C1
C122D1
C122E1
C122F1

C122M1
C123A
C123B
C123C
C123D
C123E

|Page

Page

SC240B2
SC240D2
SC240M2
SC245B2
SC245B2
SC245B2
SC245D2

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

C123F

SC250M2
SC260B2
SC260B2
SC260B2
SC260D2
SC260M2
SC260B
SC260B

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

C12B
C12C
C12F
C12G
C12H
C12U
C136D
C136E

SC260D
SC260D
SC260E
SC260M
D44C1
D44C2
D44C8
D44C6
D44C8

1393
1393
1393
1393
1147
1147
1147
1147
1147

C137ER1200

SC250B2
SC250B2
SC250B2
SC250D2

TRAN
TRAN
TRAN
TRAN
TRAN

Type

Type

SC245M2

C123M
CI 26 A
C126B
C126C
C126D
C126E
C126F

C126M
C12A

C136M
C137E

C137M
C137MR1200
C137N
C137NR1200
C137P
C137PA
C137PB
C137PBR1200
C137PR1200

GE

SCR

1046

GE
GE
GE
GE
GE

716
716
716
716
716
720
720
720
720
720

C137S
C137T
C138E10E
C138E20E

GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

720
720
720
720
728
728
728
728
728
728

C139E10E
C139E20E

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

728
728
728
733
733
733
733
733
733
733

C13Y
C140

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR

733
733
663
CF
CF
CF
1046
741

GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

HI-REL

SCR

HI-RELSCR
HI-REL SCR
SCR
SCR

SCR
SCR
SCR
SCR
SCR
SCR

C13F

C141

C144E15E
C144E30E

C144M15M
C144M30M
C144N15M
C144N30M
C144S15M
C144S30M
C147A
C147B
C147C
C147D
C147E

C147M

741
741
741

C147PB
C147S
C147T

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

747
747
747
741
747
755
755
755
755
755

SCR

C139M10M
C139M20M
C139N10M
C139N10MR1200
C139N20M
C139S10M
C139S20M

C147N
C147P
C147PA

SCR
SCR
SCR

HI-REL

C138M10M
C138M20M
C138N10M
C138N20M
C138S10M
C138S20M

741
741

322
CF
CF
CF
1046
747
747

HI-RELSCR
HI-REL SCR

GE

Replacement

C148M30
C148M40
C148N30
C148N40
C148P30
C148P40
C148PA30
C148PA40
C148PB30
C148PB40
C148S30
C148S40
C148T30
C148T40
C149A10
C149A20
C149B10

CF= CONTACT FACTORY

22

Mfg. Prod. Line

Page

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

755
755
763
763
763
763
763
763
763
CF

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CF
CF
CF
CF

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

HI-RELSCR

CF
CF

771

SCR

CF
771

SCR
HI-RELSCR
SCR

SCR
SCR
HI-REL
HI-REL

CF
771

HI-RELSCR

SCR
SCR

CF
771
771
771
CF
CF

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

771
771
775
775
775
775
775
775
775
775

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR

775
775
775
775
775
CF
775
775
775
667

GE
GE
GE
GE
GE

667
783
783
791
791
791
791
791
791
791

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

803
803
803
803
803

GE
GE
GE
GE
GE
GE

GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

HI-REL

SCR
SCR
SCR
SCR

SCR

791
799

799
799
799
799
799
799
799
799
799
799
799
803
803
803
803
803
803
803

803
803
811
811
811

Type

Page

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

C149B20
C149C10
C149C20
C149D10
C149D20
C149E10
C149E20

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

823
823

C154, C156B
C154, C156D
C154, C156E
C155, C157B
C155, C157C
C155, C157D
C155, C157M
C155, C157A
C155, C157E
C158, 159E

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

823
823
823
823
823
823
823
823
823
830

C158.159M
C168.159N
C158.159PA
C158.159PB
C158.159P
C158.159S
C158.159T

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

830
830
830
830
830
830
830

C149M10
C149M20
C150, C152P
C150,
C150,
CI 50,
C150,
C150,
C150,
C150,
C150,
C154.
CI 54,

C152M
C152N
C152PA
C152PB
C152PC
C152S
C152T
C152E
C156A
C156C

C15A
C15B
C15C
C15D
C15E
C15F

C15G
C15M
C15U
C164A
C164B
C164C
C164D
C164E

C164M
C165A
C165B
C165C
C165D
C165E

C165M
C165N
C165S
C180A
C180B
C180C
C180D
C180E

C180M
C180N
C180P
C180PA
C180PB
C180PC
C180S
C180T
C 180X500
C184A
C184B
C184C
C184D
C184E

C184M
C185A
C185B
C185C
C185D
C185E

C185M
C185N
C185S
C186N
C186P

CF = CONTACT FACTORY

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

Page

Type

GE

Replacement

Page

Type
C186PA
C186PB
C186S
C186T
C203A
C203B
C203Q
C203Y
C203YY
C20A
C20B
C20C
C200
C20E
C20F
C20U
C220A
C220B
C220C
C220D

C220E
C220F

C220M
C220U
C222A
C222B
C222C
C222D
C222E
C222F

C222M
C222U
C228A
C228B
C228C
C228D
C228E
C228F

671
671
671

C228M
C229A

671
671
671
671
671
671

C229B
C229C
C229D
C229E
C229F

C229M
C22A

838
838
838
838

C22B
C22C
C22D
C22E
C22F
C22U
C230A
C230B
C230C
C230D
C230E
C230F

838
838
838
838
838
838
838
838
838
838

C230M
C230U
C231A

842
842
842
842
842
842
842
842
842
842

C231B
C231C
C231D
C231E
C231F

C231M
C231U
C232A

842
842
842
847

C232B
C232C
C232D
C232E
C232F

851
851
851
851
851
851

C232M
C232U
C233A
C233B
C233C
C233D
C233E

851
851
851
851
851
851
851
851

C233F

C233M
C233U
C234A
C234B
C234C
C234D
C234E

CF
CF

_L

23

Mfg. Prod. Line

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GF
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GF
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page
CF
CF
CF
CF
858
858
858
858
858
862

862
862
862
862
862
862
862
862
862
862
862
862
862
862
862
862
862
862
862
862
862
862
868
868
868
868
868
868
868

868
868
868
862
862
862
862
862
862
862
874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
874

874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
880
880
880
880
880

Type

Page

Suggested

Suggested

GE

Type

Mfg. Prod. Line

Page

Type

Page

Mfg. Prod. Line

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

906
906
906
906
906
906
906
906
906
328

912
912
912
912
912
912
912
912
912
912

GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

921
921
921
921
921
921
921
921
CF
CF

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CF
CF
CF
CF
928
928
928
928
928

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

928
928
928
928
928
928
928
928
928
928

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

880
880
880
880
880
880
880
880
880
874

C35F

C30B
C30C
C30D
C30E
C30F
C30U
C31A
C31B
C31C
C310
C31E
C31F
C31U
C32A
C32B
C32C
C32D
C32E
C32F
C32U

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

874
874
874
874
874
874
874
874
874
874

C364D
C364E

GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

874
874
874
874
874
874
874
874
874
874

C36S
C37A
C37B
C37C
C37D

C33A
C33B
C33C
C33D
C33E

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

874
874
874
874
874
874
874
880
880
880

C380A
C380B
C380C
C380D

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

880
880
880
880
880
880
880
880
880
886

C380PC
C380S
C380T
C380X500
C384A
C384B
C384C
C384D
C384E

GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

886
886
886
886
886
886
886
886
886
886

C385A
C385B
C385C
C385D
C385E

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

1046
891
891
891
891
891
891
891
891
891

C234M
C235A
C235B
C235C
C235D
C235E
C235F

C235M
C30A

C33F

C33U
C34A1
C34A2
C34B1

C34B2
C34C1
C34C2
C34D1
C34D2
C34E1
C34E2
C34F1
C34F2

C350C
C350D
C350E

C350M
C350N
C350P
C350PA
C350PB
C350PC
C350S
C350T
C3512

C354A
C354B
C354C
C354D
C354E

C354M
C355A
C36BB
C355C
C355D
C355E

C355M
C358E

C358M
C358N
C358P
C358PA
C358PB
C358S
C358T
C35A
C35AR120O
C35B
C35BR1200
C35C
C350
C35QR1200
C35E
C35ER1200

GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

HI-REL

SCR
SCR

SCR
SCR
HI-REL

SCR

SCR
HI-REL

C35M
C35MR1200
C35S
C35U
C364A
C364B
C364C

C364M
C365A
C365B
C365C
C365D
C365E

C365M
C36M

C37E
C37F

C37M
C37S
C37U

C380E

C380M
C380N
C380P
C380PA
C380PB

C384M

C385M
C385N
C385S
C386N
C386P

C386PA
C386PB
C386S
C386T
C387E

C387M
C387N
C387P
C387PA
C387PB
C387S
C387T
C388E

C388M
C388N

898
898
898
898
898
898

SCR
HI-REL

C35G
C35H

891
891
891
898

SCR

C388P
C388PA
C388PB
C388S
C388T

C38A
C38B
C38BR1200
C38C
C38D
C38DR1200

898
675
CF
675
CF
675
675
CF
675
CF

C38E
C38F
C38G
C38H

CF= CONTACT FACTORY

24

Page Type

Type

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

C234F

GE

Replacement

Replacement

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

HI-REL

675
675
675

SCR

SCR
SCR
SCR
SCR
SCR

HI-REL

328
679
679
679
679
679
679
679
679
679

912
912
912
917
921
921
921
921
921
921

SCR

SCR
SCR
HI-REL

SCR
SCR
SCR
SCR

CF
675
675
906
906
906

SCR

683
683
CF
683
683
CF
683
683
683
683

Page

Suggested

GE

Suggested

Replacement
Type
C38HR1200
C38U
C390M
C390N
C390P
C390PA
C390PB
C390PC
C390S
C390T
C391PC
C391PD
C391PE
C391PM
C391PN
C391PS
C392A
C392B
C392C
C392D
C392E
C392M
C393A
C393B
C393C
C393D
C393E

C393M
C394A
C394B
C394C
C394D
C394E

C394M
C395A
C395B
C395C
C395D
C395E

C395M
C397E

C397M
C397N

Mfg. Prod. Line

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

C397P
C397PA
C397PB
C397S
C397T
C398E
C398M
C398N
C398P
C398PA
C398PB
C398S
C398T
C40A
C40B
C40C
C40D
C40F
C40G
C40H
C40U
C420
C425
C426
C440M
C440N
C440P

GE
GE

C440PA
C440PB
C440S
C440T
C441PB
C441PC
C441PD
C441PE
C441PM
C441PN

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

C441PS
C444A
C444B
C444C
C444D
C444E
C444M
C445A
C445B
C445C

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GF
GE

Gfc

HI-REL

SCR

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
PWR TRAN
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page

Type

Page

Type

Mfg.

CF
683
936
936
936
936
936
936
936
936

C445D
C445E
C445M
C445S
C447N
C447P
C447PA
C447PB
C447S
C447T

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

941
941
941
941
941
941
947
947
947
947

C448N
C448P
C448PA
C448PB
C448S
C448T
C449
C450
C45.46B
C45.46C

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

947
947
947
947
947
947
947
947
947
947

C45.46D
C45.46E
C45.46F
C45.46G
C45.46H
C45.46M
C45.46N
C45.46P
C45.46PA
C45.46PB

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

947
947
947
947
947
947
947
947
947
947

C45.46S
C45.46T
C45.46U

C48
C49
C501L
C501PC
C501PD
C501PE

C501PM
C501PN

958
958
958
958
958
958
958
958
958
958

C501PS
C501PT
C502L
C502LA
C502PT
C50.52E
C50.52M
C50.52N
C50.52P

958
958
958
958
958
958
783
783
783
783

C50.52PA
C50.52PB
C50.52S
C50.52T

C511A
C511B
C511C
C511D
C511F
C511G
C511H
C511U

783
783
783
783

C5

D40E5
040E7
D40E5

GE

Replacement

C5AR1200
C5BR1200
C5DR1200
C600N
C600P
C600PA
C600PB
C600PC
C600S
C600T
C601L
C601PB
C601PC
C601PD
C601PE
C601PM
C601PN
C601PS
C601PT
C602L
C602LA
C602LB
C602LC
C602LD

1109
1109
1109

966
966
966
966
966
966
971
971
971
971
971
971

971

976
976
976
976
<
976
S
976
<
976
c
976
c
976

C602LE

C602LM
C602LN

CF = CONTACT FACTORY

25

Prod. Line
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page
976
976
976
976
982
982
982
982
982
982
982
982
982
982
982
982
990
CF
689
689

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

993
993
993
993
993

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

993
993
993
999
999
999
707
707
707
707

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

707
707
707
707
653
653
653
653
653
653

GE
GE
GE
GE
GE
Gb
GE
GE
GE
GE

689
689
689
689
689
689
689
689
689
689
689
689
689
694
701

SCR
SCR
SCR
SCR

653
653
653
CF
CF
CF
CF
CF
CF
CF

GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

1005
1005
1005
1005
1006
1005
1005
1005

GE
GE
GE
GE
GE

HI-REL
HI-REL
HI-REL

SCR
SCR
SCR

CF
CF

Type

Page

Suggested

Suggested GE
Replacement

Type

Mfg. Prod. Line

Page

Type

100!
100!
CF
Cf
Cf
CI
71

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

65S
65!

C62B
C62C
C62D
C62E
C62F
C62G
C62H
C62U
C648
C6A

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

712
712
715
712
712
712
712
1022
659

C6B
C6C
C6D
C6F
C6G
C6U
C701L
C701PB
C701PC
C701PD

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

659
65S
659
659
659
659
1029
102S
1029
1029

C701PE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

1029
1029
1029
1029
1029
1036
1035
1035
1035
1035

GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

1041
1041
1041
1041
1041
1041
1041
1041

C7

GE

SCR

CL100
CL12
CL13
CL15

IRLED

LED56

CLI10
CLI20
CLI506
CLI510
CLI511

CLA
CLA
CLA
CLA
CLA
CLA
CLA
CLA
CLA

H11A5
4N37
H11A2
H11B1
H11A2
H11A4
4N37
4N37

1275
1293
1275
1277

CNY17-3C

GE

OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
PWR TRAN

D40E7

1109

C612PE

C612PM
C612PN
C612PS
C613
C62A

C701PM
C701PN
C701PS
C701PT
C702L
C702LA
C702LB
C702LC
C702LD
C712L
C712PC
C712PD
C712PE

C712PM
C712PN
C712PS
C712PT
C764

CP409
CQX14-17
CR0121A
CR0121B
CR0121D

CR0121M
CR0122A
CR0122B
CR0122D
CR0122M
CR1040
CR10B-10
CR10B-12
CR10B- 1

CR10B-2
CR10B-4
CR10B-6
CR10B-8
CR12A-10
CR12A-12

65
65!
65!

10K
10K
101C

10U
101C
101C
101!
71

71

GE
RTN
RTN
RTN
RTN
RTN
RTN
RTN
RTN

IRLED

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
RTN SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR

CR12A-6
CR12A-8
CR1-051C
CR1-051CA
CR1-051CB
CR1-101C
CR1-101CA
CR1-101CB

AEIL
AEIL
AEIL
AEIL
AEIL
AEIL

CR1-201C
CR1-201CA
CR1-201CB
CR1-301C
CR1-301CA
CR1-301CB
CR1-401C
CR1-401CA
CR1-401CB
CR20A-10

AEIL
AEIL
AEIL
AEIL
AEIL
AEIL
AEIL
AEIL
AEIL
MITJ

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CR20A-12
CR20A-14
CR20A-16
CR20A- 1
CR20A- 2
CR20A- 4
CR20A- 6
CR20A- 8
CR20AY-10
CR 20 AY- 12

MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCH

CR20AY- 2
CR20AY- 4
CR20AY- 6
CR20AY- 8

MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ
MITJ

CR5B-10
CR5B-12
CR5B-8
CR 1157
CR 5B-6
CS10-02M

CS10-02N
CS10-05M
CS10-05N
CS10-1M
CS10-1N
CS10-2M
CS10-2N
CS10-3M
CS10-3N
CS10-4M

1117
333

CS10-4N
CS10-6M
CS10-6N

1347
1279
531

CS11B
CS11C
CS11D
CS11E
CS11G
CS11H
CS11K

531
531

CF

CS11M
CS 13-02
CS 13-04
CS 13-06
CS 15.906
CS 15.9-04
CS 16-02
CS 16-04
CS 16-06
CS 16-08

CF

C123A
C123B
C123D
C123M
CI 22 A

C122B
C122D

C122M
C137PB
C220E

C220M
C220F

C220A
C220B
C220C
C220D
C230E

C37M

755
755
756
755
747
747
747
747

CS16-10
CS16-12
CS20-02R

747
862
862
862
862
862
862
862
874
679

CS20-05M
CS20-05N
CS20-05R
CS20-1.5R

CS20-1M
CS20-1N
CS20-1R

CF CONTACT FACTORY

26

Prod. Line
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CR2AM1
CR2AM2
CR2AM4
CR2AM6
CR2AM8
CR3AM1
CR3AM2
CR3AM4
CR3AM6
CR3AM8

PWR TRAN

Mfg.
MITJ
MITJ
MITJ
MITJ

CR12A-14
CR12A-16

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C611A
C611B
C611F
C611G
C611U
C612PC
C612PD

Type

Page

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

C602LS
C602PT
C609P
C609PA
C609PB
C609T
C60 SERIES

GE

Replacement

SCR
SCR
SCR
SCR
SCH
SCR
SCH
SCH
SCR
SCR
MITJ SCR
MITJ SCR
MITJ SCH
MITJ SCR
MITJ SCR
MITJ SCR
MITJ SCR
RTN
SCR
MITJ SCR
SCR
CRL
SCR
CRL
CRL
SCR
SCR
CRL
SCR
CRL
CRL
SCR
SCR
CRL
SCR
CRL
SCR
CRL
CRL
SCR
CRL
SCR
CRL
SCR
SCR
CRL
SCR
CRL
WESY SCR
WESY SCR
WESB SCR
WESB SCR
WESB SCR
WESB SCR
WESB SCR
WESB SCR
BBC SCR
BBC SCR
BBC SCR
BBC SCR
BBC SCR
BBC SCR
BBC SCR
BBC SCR
BBC SCR
BBC SCR
BBC SCR
CRL
SCR
CRL
SCR
CRL
SCR
CRL
SCR
CRL
SCR
CRL
SCR
CRL
SCR
CRL
SCR

Page

Type

Page

C37S
C37N
C230C
C230D
C6F

679
679
874
874
659
659
653
659
659
653

C6F
C5F

C6A
C6A
C5A
C6B
C6B
C5B
C6C
C6C
C5C
C6D
C6D
C5D
C230E

C137M
C137S
C137N
C230F
C230A
C230B
C230C
C230D
C144E15E

C144M15M
C140A
C140B

CHOC
CI 40D

C106F12
C106A12
C106B12
C106C12
C106D12
C106F12

659
659
653
659
659
653
659
659
653
874
771
771
771
874

874
874
874
874
791
791

783
783
783
783
720
720
720
720
720
720

C220C
C222U

720
720
720
720
862
862
862
747
862
862

C220U
C222F
C220F
C222A
C220A
C222B
C220B
C222C
C220C
C222D

862
862
862
862
862
862
862
862
862
862

C220D

862
862
862
659
659
659
659
659
659
659

C106A12
C106B12
C106C12
C106D12
C220E

C220M
C220D
C137M

C222M
C220M
C6U
C6F

C6A
C6G
C6B
C6B
C6C
C6D
C228B
C228D
C228M

C137M
C137N

659
868
868
868
791
880
CF
CF
675
675

C137P
C137PB
C230UX315
C232F
C230F
C230FX315
C230BX315
C232A
C230A
C230AX315

675
675
CF
874
874
CF
CF
874
874
CF

C144M15M
C234D
C228BX12
C228DX12

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

CS20-2.5R

CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

CS20-2M
CS20-2N
CS20-2R
CS20-3R

CS20-4M
CS20-4N
CS20-4R
CS20-5R
CS20-6M
CS20-6N
CS20-6R

CS25-02M
CS25-02N
CS25-02R
CS25-05M
CS25-05N
CS25-05R
CS25-1M
CS25-1N
CS25-1R

CS25-2M
CS25-2N
CS25-2R
CS25-3R

CS25-4M
CS25-4N
CS25-4R

CS25-6M
CS25-6N

CS35-02M
CS35-02N
CS35-02R
CS35-05M
CS35-05N
CS35-05R
CS35-1.5R

CS35-1M
CS35-1N
CS35-1R
CS35-2.5R

CS35-2M
CS35-2N
CS35-4M
CS35-4N
CS35-4R

CS35-6M
CS35-6N
CS35-6R
CS8-10

CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS
CS

1-02
1-04
1-06
1-08

3-02
3-04
3-06
4.9-04
4.9-06
5-02

5-04
5-06
8-02

CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
BBC

BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC

8-02N

CRL
CRL

8-04

BBC

SCR'

8-05M
8-05N

CRL
CRL

8-06
8-08

BBC
BBC
BBC

SCR
SCR
SCR
SCR

CS8-12
CS8- 1M
CS8- IN
CS 8- 2M
CS 8- 2N
CS 8- 3M
CS 8- 3N
CS 8-4M
CS 8- 4N
CS 8- 6M

CS

8- 6N
D13T1
D13T2
D13T3
D13T4

D16G6
D16P1
D29E10
D29E10-J1

D29E1

CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
CRL
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
UJT TRAN
UJT TRAN
UJT TRAN
UJT TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN

Type
C230CX315
C232B
C230B
C230BX315
C230CX315
C232D
C230D
C230DX315
C230EX315

C232M
C230M
C230MX315
C232U
C230U
C230UX201
C232F
C230F
C230FX201
C232A
C230A
C230AX201
C232B
C230B
C230BX201
C230CX201
C232D
C230D
C230DX201

C232M
C230M
C229U
C228U
C228U
C229F
C228F
C228F
C228B

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

8-02M

Page

Page

Type

CF
874
874
CF
CF
874
874
CF
CF
874

D29E1-J1

D29E2-J1

D29E4
D29E4-J1

D29E5
D29E5-J1

D29E6
D29E6-J1

D29E7
D29E7-J1

D29E9
D29E9-J1

D32H1

D32H2
032H3
D32H4
D32H5
D32H6
D32H7
D32H8
D32H9

Mfg. Prod. Line

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

CF
874
874
CF
CF
874
874
CF
874
874

D32S10
D32S1

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

868
868
868
868
868
868
868
868
868
868

D32S2
D32S3
D32S4
D32S5
D32S6
D32S7
D32S8
D32S9
D32V1
D32V2

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

868
868
868
868
868
868
868
868
868
CF

D32V3

D32W10
D32W12
D32W13
D32W14
D32W7
D32W8
D32W9

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

747
880

C144M15M

791

C230BX211
C230DX211
C230MX211
C230B
C222UX304
C220UX304
C230D
C222FX304
C220FX304
C230M
C136NX85

CF

C136PBX85
C222AX304
C222FX304
C222BX304
C222BX304
C222CX304
C222CX304
C222DX304
C222DX304
C222MX304
C220MX304

029E2

874
CF
874
874
CF
874
874
CF
874
874

C229A
C228A
C228A
C228C
C229B
C228B
C229D
C228D
C2280
C229M
C228M
C228M
C136PX85
C116B
C116D
C116M
C116N
C122B
C122D
C122M
C234D

GE

Replacement

032L1
D32L2
D32L3
D32L4
D32L5
D32L6

D33D21
D33D21-J1

741
741
741
741
747
747

D33D22
D33D22-J1

D33024
D33D24-J1

D33D25
D33025-J1

D33D26
D33D26-J1

D33D27
D33D27-J1

CF
CF
874
CF
CF
874
CF
CF
874
CF

D34C2
D34C3
D34C4
D34C5
D34C6

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF

D34J2
D34J3
D34J4
D34J5
034J6
D34J7
D34J8
D34J9
D3814

D33D29
D33D29-J1

D33030
D33D30-J1

D34C1

D34J1

CF

D38H1

510
510
1069
1069

D38H2
D38H3
D38H4
D38H5
D38H6
D38H7
038H8
D38H9

1071
1072

1080
1080
1074

D38L1

CF- CONTACT FACTORY

27

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG

Page
1074
1074
1074
1076
1076
1076
1076
1076
1076
1076
1076
1080
1080
CF
CF
CF
CF
CF
CF
CF

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
1074
1074
1074
1074
1076
1076
1076
1076
1076
1076
1076
1076

1080
1080
1080
1080
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
1094
1082
1082
1082
1082
1082
1082
1082
1082
1082
1084

Type

Page

Suggested

Suggested GE
Replacement
Mfg. Prod. Line

Type

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

D38L2
D38L3

D38U
D38L5
D38L6

D38S10
D38S1
D38S2
D38S3
D38S4
D38S5
D38S6
D38S7
D3SS8
D38S9
D38V1
038V2
D38V3

D38W10
D38W11
038W12
D38W13
D38W7
D38W8
038W9
D39C1
D39C2

D39C3
D39C4
D39C5
D39C6

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

D39J1
D39J2
D39J3
D39J4
D39J5
D39J6
D39J7
039J8
D39J9

D40C1
D40C2
D40C3
040C4
D40C5
D40C7

D40D10
D40D11
D40D13
D40D14
D40D1
D40D2
D40D3
D40D4
D40D5
D40D7
D40D8
040E1
D40E5
D40E7

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

D40P1

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

D40P3
D40P5
D41D10
041D1
D41D13
D41D14
D41D1
D41D2

GE
GE
GE
GE
GE
GE
GE
GE

041D4
D41D5
D41D7
D41D8

GE

D40K1
040K2
D40K3
D40K4
D40N1

D40N2
D40N3
D40N4
D40N5

D41E1
D41E5
D41E7
041K1

D41K2
D41K3
D41K4
D42C10

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG

Page

Type

GE

Replacement
Type

Page

Mfg. Prod. Line

1084
1084
1084
1084
1084
1088
1088
1088
1088
1088

D42C11
D42C12
D42C1
D42C2
D42C3
D42C4
D42C5

D42C6
D42C7
D42C8

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

1088
1088
1088
1088
1088
1092
1092
1093
1094
1094

D42C9
D42R1
D42R2
D42R3
D42R4
D43C10
D43C11
D43C12
D43C1
D43C2

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

1094
1094
1094
1094
1094
1084
1084
1084
1084
1084

D43C3
D43C4
D43C5
D43C6
D43C7
043CE
D43C9
D44C10
D44C11
D44C12

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

1084
1098
1098
1098
1098
1098
1098
1098
1098
1098

D44C1
D44C2
D44C3
D44C4
D44C5
D44C6
D44C7
D44C8
D44C9
D44E1

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

1101
1101
1101
1101
1101
1101

1105
1105
1105
1105

D44E2
D44E3
D44H10
D44H11
D44H1
D44H2
D44H4
D44H5
D44H7
D44H8

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

1105
1105
1105
1105
1105
1105
1105
1109
1109
1109

D44Q1
D44Q3
D44Q5
D44R1
D44R2
D44R3
D44R4
D44R5
D44R6
D44R7

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

1113
1113
1113
1113
1117
1117
1117
1117
1117

D44R8
D45C10
D45C11
D45C12
D45C1
D45C2
D45C3
D45C4
D45C5
D45C6

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

D45C7
D45C8
D45C9

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

1121
1121
1121

1123
1123
1123
1123
1123
1123
1123
1123

D45E1
D45E2
D45E3

D45H10
D45H11
D45H12
D46H3
D45H6
D45H7
D45H8
D45H9

1123
1123
1129
1129
1129
1133

D5J37
D5J43
D5J44
D5J45
D5K1
D5K2

1133
1133
1133

1135

CF= CONTACT FACTORY

28

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
UJT
UJT
UJT
UJT
UJT
UJT

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN

Page

Type

1135
1135
1135
1135
1135
1135
1135
1135
1135
1135
1135
1139
1139
1139
1139
1143
1143
1143
1143
1143
1143
1143
1143
1143
1143
1143
1143
1147
1147
1147
1147
1147
1147
1147
1147
1147
1147
1147
1147
1151
1151
1151
1155
1155
1155
1155

1155
1155
1155
1155
1157
1157
1157
1159
1159
1159
1159
1159
1159
1159
1159
1163
1163
1163
1163
1163
1163
1163
1163
1163
1163
1163
1163
1167
1167
1167
1171
1171
1171
117
117
117
117
117
105"
105i
105!>
106C)

106
106

Page

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

DA1701
DA1702
DA 1703

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

DA 1704
DC 14V

DC28V
DC42V
DC56V
DE104
DE1 10

DE111
DE1 12

DE113
DE114
DE115
DE125
DT1110
DT1

GE
GE
GE
GE
GE
GE

DIODE
DIODE
DIODE
DIODE

MOV
GEMOV
GEMOV
GEMOV
GE

SIG DIODE
SIG DIODE
SIG
SIG
SIG
SIG
SIG
SIG

DIODE
DIODE
DIODE
DIODE
DIODE
DIODE

1 1

DT1 121

DT1122
DT1311
DT1321
DT1510
DT1511
DT1512
DT1520
DT1521
DT1522

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
SIG DIODE
SIG DIODE
SIG DIODE

EC 103

GE
GE
GE
GE
GE
GE
GE
GE
GE
TCE

EC103B
EC103D
EC103Y
FCD810
FCD810C
FCD810D
FCD811
FCD820
FCD820C
FCD820D

TCE
TCE
TCE
FSC
FSC
FSC
FSC
FSC
FSC
FSC

SCR
SCR
SCR
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO

FCD825C
FCD825D
FCD830C
FCD830D
FCD831C
FCD831D
FCD836C
FCD836D

FSC
FSC
FSC
FSC
FSC
FSC
FSC
FSC

FT340
GEMR-6

GER4001
GER4002
GER4003
GER4004
GER4005
GER4006
GER4007

GE
GE
GE
GE
GE
GE
GE

GE-27
GE-28
GE-29

GES2221
GES2221A
GES2222

GES2222A
GES2483
GES2906
GES2907
GES5305
GES5306
GES5306A
GES5307
GES5308
GES5308A
GES5368
GES5369
GES5372
GES5373

GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

Mfg.

1176
1176
1176

GES5813
GES5814
GES5815
GES5816
GES5817
GES5818
GES5820
GES5821
GES5822
GES5823
GES5824
GES5825
GES5826
GES5827
GES5828
GES6000
GES6001
GES6002
GES6003
GES6004
GES6005
GES6006
GES6007
GES6010
GES6011
GES6012
GES6013
GES6014
GES6015
GES6016

GE
GE
GE
GE
GE
GE
GE
GE
Ub
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

716
858
715
1279
1285
1285
1277
1275
1285
1285

GES6017
GES6218
GES6219
GES6220
GES6221
GES6222
GES6223
GES6224
GES929
GES930

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

1285
1285
1285
1285
1285
1285
1285
1285
1135
1135

GET2221

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

H76
1176
CF

D40E1
D40E7
D40N1
D40E1

1109
1109
1117
1109

D40E7
D40N1
D40E7
D40E7

1109
1117
1109
1109
1109
1109
1109
1109
1109
1109

D40E1
D40E5
D40E7
D40E1
D40E7
D40E7
1177
1177
1177
1177
1177
1177
1179
1179
1179

C103A
C103B
C203D
C103Y
H11A5
H11A520
H11A520
H11A3
H11A2
H11A520
H11A520
H11A550
H11A550
H11A520
H11A520
H11A520
H11A520
H11A520
H11A520
D42C8
D42C5

COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
PWR TRAN
PWR TRAN

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN

Type

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

716

GET2221A
GET2222
GET2222A
GET2483
GET2904
GET2905
GET2906
GET2907
GET3013
GET3014
GET3563
GET3638
GET3638A
GET3646
GET3905
GET3906
GET5305
GET5306
GET5306A
GET5307
GET5308
GET5308A
GET5457
GET5458
GET5459
GET929
GET930
GT015
GT06
GT08
GT115
GT16
GT18
GT215
GT26
GT28
GT315
GT36
GT38

1190
1190
1190
1190
1190
1190
1190

PWR
PWR
PWR
PWR
PWR
PWR

GE-18
GE-23
GE-26

Page

GES5374
GES5375
GES5447
GES5448
GES5449
GES5450
GES5451
GES5810
GES5811
GES5812

SCR

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

Type

1173
1173
1173
1173
545
545
545
545
1175
1176

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

DT1112
DT1120

DT230A
DT230B
DT230F
DT230G
DT230H1
DT230H
DZ800
DZ805
DZ806

SIG
SIG
SIG
SIG

Page

D44R1
D44C8
D44C8

1159
1147
1147

D40N8
D42C8
D43C8

1117
1135
1143

GE

Replacement

1195
1197
1195
1197
1199
1201
1203
1205
1205
1205
1205
1205
1205
1209
1209
1211
1211

CF= CONTACT FACTORY

29

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

Prod. Line

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG

Page

Type

Page

1211
1211

1213
1213
1215
1215
1215
1217
1217
1217
1217
1219
1219
1219
1219
1219
1223
1223
1223
1223
1227
1227
1227
1232
1234
1236
1240
1236
1240
1244
1248
1244
1248
1252
1256
1252
1256
1264
1260
1264

1260
1268
1268
1268
1268
1271
1271
1271
1191
1191

GES2221

1195
1197
1195
1197
1199
CF
CF

GES2221A
GES2222
GES2222A
GES2483
GES2904
GES2905
GES2906
GES2907
GES3013
GES3014
GES3563
GES3638
GES3638A
GES3646
GES3905
GES3906
GES5305
GES5306
GES5306A
GES5307
GES5308
GES5308A

1205
1205
1205

TRIAC
TRIAC

3ES5457
3ES5458
GES5459
GES929
3ES930
SC151B2
SC142B2

1191
1191
1381
1381

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC143B2
SC151B2
SC141B2
SC143B2
SC151B2
SC141B2
SC143B2
SC151D2
SC141D2
SC143D2

1381
1381
1381
1381
1381
1381
1381
1381
1381
1381

1201

1203
CF
CF
CF
CF
CF
CF
CF
CF
1205
1205
1205

Suggested

Suggested

GE

Replacement
Type

Mfg.

Prod. Line

GT415
GT46
GT48
GT515
GT56
GT58
GT66
GT68
H103SH
H113SH

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

HI 1A10

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE

OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL

HUT
HUT

TRIAC
TRIAC

GE
GE
GE
GE

OPTO
OPTO
OPTO
OPTO

HUT

TRIAC

GE
GE
GE
GE
GE

OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO

H11A1

H11A2
H11A3
H11A4
H11A5100
H11A5100
H11A520
H11A550
H11A550
H11A5
H11AA1
H11AA2
H11B1
H11B255
HI 1B2

H11B3
H11BX522
H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
HI 1D1

H11D2
H11D3
H11D4
H123SH
H133SH
H13A1
H13A2
H13B1
H13B2
H143SH
H15A1
H15A2
H15B1
H15B2
H17A1
H17B1
H19A1
H19B1
H74A1
H74C1

H74C2
HEP706

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE

HEP-714

HS07
HS08

HS17
HS18
HS27
HS28
HS37
HS38
HS47
HS48
HS57
HS58
HS67
HS68

HW SERIES
I3PT030
I3PT040
I3PT130
I3PT140
I3PT230
I3PT240
I3PT330
I3PT340
I3PT430
I3PT440
I3PT530
I3PT540
I3PT630
I3PT640
ID100
ID101

ID102

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
GE

Page

COUPL
COUPL
COUPL
COUPL

SCR
SCR
SCR

1381
1381
1381
1381
1381
1381
1381
1381

COUPL
COUPL
COUPL
COUPL
DET
DET
DET
DET

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

ID103
ID104
ID105
ID106
ID200
ID201
ID202
ID203
ID300
ID301

1377
1377

Mfg. Prod. Line

UNI
UNI
UNI
UNI
UNI
UNI
UNI
UNI
UNI
UNI

I.IX

IL5

LIX

IL74

MX

ILA30
ILA55
ILCA2-30
ILCA2-55

IIX
LIX
LIX
LIX

1279
1289
1289
1293
1295
1293
1293
1297
1299
1299

IN2054-68
IN2054-68
IN3161-74
IN4587-96
IP100

IR

RECTIFIER

WEST RECT
WEST RECT
WEST RECT

1299
1303
1303
1303
1307
1307
1307
1307

UNI
UNI
UNI
UNI
UNI
UNI

SCR
SCR
SCR
SCR
SCR
SCR

IP106
IR106A1

UNI

IR106A2
IR106A3
IR106A41
IR106A4

IR

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

IP101
IP102
IP103
IP104
IP105

1377
1377

1309
1309
1311
1311

1377

1313
1313
1315
1315
1317
1319
1321
1325
1327
1327
1327

D44R3

IR106B4
IR106C1
IR106C2
IR106C3
IR106C41
IR106C4
1R106D1
IR106D2
IR106D3
IR106D41

IR

IR106D4

IR

IR106F1
IR106F2
IR106F3
IR106F41
IR106F4
IR106Q1

IR

IR106Q2
IR106Q3
IR106Q41

IR

IR106Q4

IR

IR106Y1
IR106Y2
IR106Y3
IR106Y41
IR106Y4
IR122A
IR122B
IR122C
IR122D

IR

IR

IR

C116M21
C123M

741
755

SC265B4
SC265B4
SC265B4
SC265B4
SC265B4
SC265B4
SC265D4
SC265D4
SC265D4
SC265D4
SC265E4
SC265E4

1393
1393
1393
1393
1393
1393
1393

IR122F
IR140A
IR140B
IR140C
IR140D
IR140F
IR141A
IR141B
IR141C
IR141D

1393
1393
1393
1393
1393
1393
1393
716
716
716

IR141F
IR30A
IR30B
IR30C
IR30D
IR30E
IR30F
IR30U
IR31A
IR31B

30

IR
IR

741
755
741
755
741
755
741
755
741
755

CF= CONTACT FACTORY

IR
IR

C116A21
C123A
C116B21
C123B
C116C21
C123C
C116D21
C123D
C116E21
C123E

C103Y
C103YY
C103A

IR

IR106B1

D44R1
C116F21
C123F

SC265M4
SC265M4

IR

IR106B2
IR106B3
IR106B41

1159
1159
741
755

CF

MX
MX

IR
IR

IR
IR
IR
IR
IR
IR
IR
IR
IR

IR
IR

IR
IR
IR
IR
IR

IR
IR
IR
IR
IR
IR
IR
IR

IR
IR
IR
IR
IR
IR
IR
IR

IR

IR
IR
IR
IR
IR

IR
IR
IR
IR

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Type

C5F

IL1

IX

I.

Page

C103B
C103B
C203C
C203D

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO

IL12
IL15
IL16

SC136D

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
HEAT SINK

UNI
UNI
UNI

SC151D2
SC141D2
SC143D2
SC151E2
SC141E2
SC143E2
SC141M2
SC143M2
SC136A
SC136A

Type

1281
1275
1275
1277
1277
1285
1285
1285
1285
1285

SCR
SCR

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

Page

SC136B
SC136D

COUPL
COUPL
COUPL
PWR TRAN
PWR TRAN

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

Type

GE

Replacement

COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL

C5A
C5G
C5B
C5C
C5D
H11A5
H11A5
H11A5
H11A3
H11A1
H11A5
H11B3
H11B255
H11B3
H13B1

Page
716
716
858
858
653
653
653
653
653
653
1279
1279
1279
1277
1275
1279
1293
1295
1293
1311

A190
A190
A190
A180
C203Y
C203YY
C203A
C203G
C203B
C203C

643
643
643

C203D
C106A1
C106A2
C106A3
C106A41
C106A4
C106B1
C106B2
C106B3
C106B41
C106B4
C106C1
C106C2
C106C3
C106C41
C106C4
C106D1
C106D2
C106D3
C106D41
C106D4

858
720
720
720
720
720
720
720
720
720

C106F1
C106F2
C106F3
C106F41
C106F4
C106Q1

C106Q2
C106Q3
C106Q41
C106Q4
C106Y1
C106Y2
C106Y3
C106Y41
C106Y4

C122A
C122B
C122C
C122D
C122F
2N3650
2N3651
2N3652
2N3653
2N3649
2N3655
2N3656
2N3657
2N3658
2N3654
C230A
C230B
C230C
C230D
C230E
C230F
C230U
C231A
C231B

581
858

858
858
858
858
858

720
720
720
720
720
720
720
720
720
720
720
720
720
720
720
720
720
720
720
720

720
720
720
720
720
720
747
747
747
747
747
783
783
783
783
783
783
783
783
783
783
874
874
874
874
874
874
874
874
874

Suggested

GE

Suggested

Replacement
Type
IR31C
IR31D
IR31E
IR31F
IR31U
IR32A
IR32B
IR32C
IR32D
IR32E
IR32F
IR32U
IR33A
IR33B
IR33C
IR33D
IR33E
IR33F
IR33U
IR5A

Mfg. Prod. Line

IR
IR
IR

IR
IR
IR

IR
IR
IR
IR
IR

IR
IR
IR
IR
IR
IR
IR
IR
IR

IR5B
IR5C
IR5D

IR

IR5F

IR

IR5G
IR5H
IR5U
IR6A
IR6B
IR6C

IR6D
IR6F
IR6G
IR6H
IR6U
IS0 10
15015

IS020
IS110
IS115

IS120
IS210
IS215
IS220
IS310
IS315
IS320
IS410
IS415
IS420
IS510
IS515
IS520
IS610
IS615
IS620
IS 08
IS 18
IS
IS

28
38

48
58
68
ISPT030
ISPT040
ISPT130
ISPT140
ISPT230
ISPT240
ISPT330
IS
IS

IS

ISPT340
ISPT430
ISPT440
ISPT530
ISPT540
ISPT630
ISPT640
IT010
IT06
IT08
IT110
IT16
IT18

IT210
IT26
IT28

IT310
IT36
IT38

IT410

CF = CONTACT FACTORY

IR
IR

IR
IR
IR
IR
IR
IR
IR
IR

IR
IR
IR

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

Page

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Type
C231C
C231D
C231E
C231F
C231U
C232A
C232B
C232C
C232D
C232E
C232F
C232U
C233A
C233B
C233C
C233D
C233E
C233F
C233U
C5A
C5B
C5C
C5D
C5F
C5G
C5H
C5U
C6A
C6B
C6C
C6D
C6F
C6G
C6H
C6U
C126F

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page

C126A
ZJ436A

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

ZJ436A
C126B
ZJ436B
ZJ436B
C126C
ZJ436C
ZJ436C
C126D
ZJ436D
ZJ436D

CF
763
CF
CF
763
CF
CF
763
CF
CF

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C126E
ZJ436E
ZJ436E

763
CF
CF
763
CF
CF
755
755
755
755

C123M

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC265B2
SC265B2
SC265B2
SC265B2
SC265B2
SC265B2
SC265D2

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC265D2
SC265D2
SC265D2
SC265E2
SC265E2
SC265M2
SC265M2
SC147B
SC140B
SC142B

1381
1381
1381

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC147B
SC140B
SC142B
SC147B
SC140B
SC142B
SC147D
SC142B
SC142D
SC147D

1381
1381
1381
1381
1381
1381
1381
1381
1381
1381

C126M
ZJ436M
ZJ436M
C123F

C123A
C123B
C123C
C1230
C123E

Mfg.

IT46
IT48

ITT
ITT

ITC 103-3
ITC 103-4
ITC 103-5
ITC 103-6

ITT
ITT
ITT
ITT

SCR
SCR
SCR
SCR
SCR
SCR

JAN1N1184.R
JAN1N1186.R
JAN1N1188.R
JAN1N1190.R
JAN1N1202A.RA
JAN1N1204A.RA

GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

209
209
209
209
213
213

JAN1N1206A.RA
JANIN1614
JAN1N1615
JAN1N1616
JAN1N3289
JAN1N3291
JAN1N3293
JAN1N3294
JAN1N3295
JAN1N3671A.RA
JAN1N3673A.RA
JAN1N3713
JAN1N3715
JAN1N3717
JAN1N3719
JAN1N3721

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

213
221
221
221
234
234
234
234
234
213

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
DIO
DIO
DIO
DIO
DIO
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

213
237
237
237
237
237
209
209
249
249

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE

249
253
253
253
253
253
205
258
262
262

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SIG DIODE
SIG DIODE

205
262
712 C60
653
653
653
653
653
653
653

JAN1N3893.R
JAN1N3909.R
JAN1N3910.R
JAN1N3911.R
JAN1N3912.R
JAN1N3913.R
JAN1N4148-1

JAN1N4150
JAN1N4153
JAN1N4454
JAN1N4531
JAN1N4532
JAN2N2031
JAN2N2323A
JAN2N2323A
JAN2N2323
JAN2N2323
JAN2N2324
JAN2N2324A
JAN2N2324A
JAN2N2324
JAN2N2326
JAN2N2326
JAN2N2326A
JAN2N2326A
JAN2N2328
JAN2N2328
JAN2N2329
JAN2N2329
JAN2N489A
JAN2N490A
JAN2N491A
JAN2N492A
JAN2N493A
JAN2N494A
JAN2N682
JAN2N683
JAN2N685
JAN2N686
JAN2N687
JAN2N688
JAN2N689

1393
1393
1393
1393
1393
1393
1393

JANTX1184.R
JANTX1204A.RA
JANTX1N1190.R
JANTX1N1188.R
JANTX1N1186.R
JANTX1N1206A.RA
JANTX1N1202A.RA
JANTX1N3673A.RA

_l_

31

Type

IT610
IT66
IT68
ITC 103-1
ITC 103-2

JAN1N3766.R
JAN1N3768.R
JAN1N3890.R
JAN1N3891.R

755
755
755
1393
1393
1393
1393
1393
1393
1393

Page

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

IT56
IT58

653
653
653
653
653
653
653
659
659
659

Prod. Line

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

IT510

874
874
874
874
874
874
874
874
874
653

659
659
659
659
659
763
CF
CF
763
CF

ZJ436F
ZJ436F

Type

874
874
874
874
874
874
874
874
874
874

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

GE

Replacement

TUNNEL
TUNNEL
TUNNEL
TUNNEL
TUNNEL

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
UJT TRAN

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

UJT
UJT
UJT
UJT
UJT
SCR
SCR
SCR
SCR
SCR

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR

TRAN
TRAN
TRAN
TRAN
TRAN

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

SC140D
SC142D
SC147E
SC140E
SC142E
SC147M
SC140M

653
653
653
653
653
653
653
653
653
298

298
298
298
298
298
306
306
306
306
306
306
306
209
213
209
209
209
213
213
213

Page

SC142M

1381
1381
1381
1381
1381
1381
1381
1381

C103Y
C103YY

716
716

C103A
C103B
C203C
C203D

716
716
858
858

Suggested

Suggested

GE

Replacement
Type

Mfg. Prod. Line

JANTX1 N3671A.RA
JANTX1 N3766.R
JANTX1 N3768.R
JANTX1 N3893 R
JANTX1 N3890, R
JANTX1 N3891 R
JANTX1 N3910.R
JANTX1 N3909.R
JANTX1 N3911.R
JANTX1 N3912.R
JANTX1N3913.R
JANTX1N4148-1
JANTX1N4153
JANTX1N4150
JANTX1N4454
JANTX1N4532
JANTX2N2329

JANTX2N2326A
JANTX2N2328
JANTX2N2323
JANTX2N2324
JANTX2N2323A
JANTX2N2326
JANTX2N2324A
JANTX2N2326A
JANTX2N2328
JANTX2N2324A
JANTX2N2324
JANTX2N2323
JANTX2N2329
JANTX2N2326
JANTX2N2323A
JANTX2N489A
JANTX2N494A
JANTX2N492A
JANTX2N490A
JANTX2N493A
JANTX2N491A
JANTX2N688
JANTX2N682
JANTX2N685
JANTX2N683
JANTX2N689
JANTX2N687
JANTX2N686
JANTXV1N4531
JANTXV1N4148-1

JANTXV1N4532
L14F1

L14F2
L14G1

L14G2
L14G3
L14H1
L14H2

L14H3
L14H4
L811A
L811B
L811F

L811G
L811U
L8A
L8B
L8F
L8G
L8U

L911A
L911B
L911F

GE-MOV

SC146B
SC146B
SC146B
SC146B

1381
1381
1381
1381

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC146D
SC146D
SC146E
SC146M
SC146B
SC146B
SC146B
SC146B
SC146D
SC146D
SC146E
SC146M
SC260B
SC260B
SC260B
SC260B
SC260D
SC260E
SC260M
SC261B
SC261B
SC261B
SC261B
SC261D
SC261D
SC261E
SC260B
SC260B
SC260B
SC260D
SC260D
SC260E
SC265B2
SC265D2
SC265M2
SC246M
SC245M
SC246M
SC245M
SC245B2

1381
1381
1381
1381
1381
1381
1381
1381
1381
1381

653
653
653
653
653
653
653
653
653
653

MAC 11 -7
MAC 11-8

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR

653
653
298
298
298
298
298
298
306
306

MAC37-2
MAC37-3
MAC37-4
MAC37-5
MAC37-6
MAC37-7
MAC38-2
MAC38-3
MAC38-4
MAC38-5

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR
SCR
SCR
SCR

306
306
306
306
306
205
205
262

MAC38-6
MAC38-7

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

OPTO DET
OPTO DET
OPTO DET
OPTO DET
OPTO DET
OPTO DET
OPTO DET
OPTO DET
OPTO DET
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
OPTO SCR
GE-MOV

GE
GE
GE
GE

IR

M21C
M21CA
M23C
M23CA

MATJ
MATJ
MATJ
MATJ

SCR
SCR
SCR
SCR

M46-73 SERIES

GE
GE

SIG DIODE

1341
1341
1341
1341

IR
IR

PELLETS

MAC 11-2
MAC 11-3
MAC11-4

MAC 11 -5
MAC11-6

MAC36-1
MAC36-2
MAC36-3
MAC36-4
MAC36-5
MAC36-7
MAC36-8
MAC37-1

MAC40688
MAC40689
MAC40690
MAC40795
MAC40796
MAC40797
MAC40798
MAC40799
MAC40800
MAC40801
MAC4688
MAC4689
MAC4690
MAC5441
MAC5442
MAC5443
MAC5444
MAC5445
MAC5446
MCA230
MCA231
MCA255
MCA81
MCA8
MCH2005F
MCR101
MCR102
MCR103
MCR104

1329
1329
1329
1329
1329
1329
1329
1418

LED
LED
LED
LED

IR

MAC11-1

1329
1329
1329
1329
1329
1329
1329
1329
1329
1329

IRLED

LED

MAC 10-2
MAC 10-3
MAC 10-4
MAC 10-5
MAC 10-6
MAC 10-7
MAC 10-8

1337
1337
1337
1339
1339
1339
1339
1329
1329
1329

1341
1341

IR

SERIES

MAC10-1

1335
1335

MCR106-1
MCR106-2

MCR 106-3
MCR106-4
MCR106-6
MCR106-8
MCR107-1
MCR107-2
MCR107-3

MCR 107-4
MCR107-6
MCR107-8

C203B
C203D
C107B1
C107B1

MCR115
MCR120

858
858
728
728

MCR1718-5
MCR1718-6
MCR1718-7
MCR1718-8
MCR1907-1

CF
1343

CF= CONTACT FACTORY

32

1109
1109

TRIAC
TRIAC
TRIAC
TRIAC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

SIG DIODE
SIG DIODE
SIG DIODE

D40E5
D40E7

134:
134:

MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MTO
MTO
MTO
MTO
MTO

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SCR
SCR

Page

GE

SCR
SCR
SCR
SCR

UJTTRAN

Type

MA

253
205
262
258
262
262
653
653
653
653

UJT TRAN
UJT TRAN

SIG DIODE
SIG DIODE
SIG DIODE

Page

GE
GE
GE

RECTIFIER
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE
SIG DIODE

UJTTRAN
UJT TRAN
UJT TRAN

Mfg. Prod. Line

MA1702
MA1703
MA1704
MA8001
MA8003

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE

LED55C
LED55CF
LED56
LED56F

MA1701

Type

Page

213
209
209
249
249
249
253
253
253
253

LED55B
LED55BF

L9B
L9F
L9G
L9U
L SERIES

Type

RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER
RECTIFIER

GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

L911G
L911U
L9A

Page

GE

Replacement

134;

PWR TRAN
PWR TRAN

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOT
MOTA
MOTA
MOT
MOT
MOT
MOT
MOT

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

COUPL
COUPL
COUPL
COUPL
COUPL
PWR TRAN
SCR
SCR
SCR
SCR
SCR
SCR
SCR

OPTO
OPTO
OPTO
OPTO
OPTO

SCR
SCR
SCR
SCR
SCR
SCR

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

142f

SC245D2
SC245M2
SC265B2
SC265D2
SC265M2
SC266B
SC266D
SC266M
SC265B
SC265D
SC265M
H11B3
H11B2
H11B255
H13B2
H13B1
D40C1

C203Q
C203Y
C203YY

C203A
C106Y1
C106A1
C106A1
C106B1
C106D1

C106M1
C107Y1
C107A1
C107A1
C107B1
C107D1

C107M1
C203G
C203B
2N3652
2N3653
C144E15E

C144M15M
C140F

1381
1381
1393
1393

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1293
1293
1295
1311
1311
1101
858
858
858

858
720
720
720
720
720
720
728
728
728
728
728
728
858
858
783
783
791
791
783

Suggested

GE

Type
MCR1907-2
MCR1907-3
MCR1907-4

MCR 1907-5
MCR1907-6
MCR220-5
MCR220-7
MCR220-9
MCR221-5
MCR221-7
MCR221-9
MCR2315-1
MCR2315-2
MCR2315-3
MCR2315-4
MCR2315-5
MCR2315-6
MCR2604-1
MCR2604-2
MCR2604-3

MCR2604-4
MCR2604-5
MCR2604-6
MCR2604-7
MCR2604-8
MCR2605-1
MCR2605-2
MCR2605-3
MCR2605-4
MCR2605-5
MCR2605-6
MCR2605-7
MCR2605-8
MCR2614L-3
MCR2614L-2
MCR2614L-4
MCR2614L-1
MCR2614L-6
MCR2614L-5
MCR3000-1
MCR30O0-2
MCR3000-3
MCR3000-4
MCR3000-5
MCR300O-6
MCR3000-7
MCR3000-8
MCR3000-9
MCR3818-1
MCR3818-2
MCR3818-3
MCR3818-4
MCR3818-5
MCR3818-6
MCR3818-7
MCR3818-8
MCR3835-1
MCR3835-2
MCR3835-3
MCR3835-4
MCR3835-5
MCR3835-6
MCR3835-7
MCR3835-8
MCR3918-1
MCR3918-2
MCR3918-3
MCR3918-4
MCR3918-5
MCR3918-6

MCR3918-7
MCR3918-8
MCR3935-1
MCR3935-2
MCR3935-3
MCR3935-4
MCR3935-5
MCR3935-6
MCR3935-8
MCR406-1
MCR406-2
MCR406-3
MCR406-4
MCR407-1
MCR407-2
MCR407-3
MCR407-4
MCR649-1
MCR649-2
MCR649-3

Mfg. Prod. Line

MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR
MOT SCR

Page

Type
C140F
C140A
C140B

CHOC
C140D
C126C
C126E
C126S
ZJ436C
ZJ436E

C220UX300
C220FX300
C220AX30O
C220BX300
C220CX300
C220DX300
C222UX203
C222FX203
C222AX203
C222BX203
C222CX203
C222DX203
C222EX203
C222MX203
C222UX203
C222FX203
C222AX203
C222BX203
C222CX203
C2220X203
C222EX243
C222MX203
C222AX203
C222FX203
C222BX203
C222UX203
C222DX203
C222CX203
C122F
C122F

C122A
C122B
C122C
C122D
C122E

C122M
C122S

C232UX240
C232FX240
C232AX240
C232BX240
C232CX240
C232DX240
C232EX240
C232MX240
C229UX10
C229FX10
C223AX10
C229BX10
C229CX10
C229DX10
C229EX10
C229MX10
C230UX240
C230FX240
C230AX240
C230BX240
C230CX240
C230DX240
E230EX240
C230MX240
C228UX10
C228FX10
C228AX10
C228BX10
C228CX10
:228DX10
0228MX10

Replacement

Page

Type

783
783
783
783
783
763
763
763
CF
CF

MCR649-4
MCR649-5
MCR649-6
MCR649-7

ZJ436S

MCS2400
MCS2
MCT26
MCT2
MCT2E
MCT81
MCT8
MJ2249
MJ2250

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF

MJ2251
MJ2252
MJ2253
MJ2264
MJ3101
MJ3201
MJ3202
MJ3701
MJ400
MJ4101
MJ420
MJ421
MJ8100
MJE101
MJE102
MJE103
MJE106

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
747

MJE105K
MJE170
MJE171
MJE172
MJE180
MJE181
MJE182
MJE200
MJE201
MJE2O20
MJE2021
MJE202
MJE203
MJE2O50
MJE205
MJE205K
MJE210
MJE2150
MJE220
MJE221
MJE222
MJE223
MJE224
MJE225
MJE230
MJE231
MJE232
MJE233
MJE234
MJE235
MJE2370
MJE2371
MJE240
MJE241
MJE242
MJE2480
MJE2481
MJE2482
MJE2483
MJE250
MJE251
MJE2520
MJE2521
MJE2622
MJE2523
MJE252
MJE2801
MJE2901
MJE2955
MJE3054
MJE3055
MJE3370
MJE3371
MJE340
MJE340K
MJE341
MJE341K
MJE3440
MJE344
MJE344K

747
747
747
747
747
747
747
747
CF
CF

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF

CF

C108Y1

CF
CF
CF
CF
CF
CF
CF
CF
733

C108A1
C108A1
"108B1
:108Y1
:i08Ai
C108A1
C108B1
:232U
:232F
:232A

733
733
733
733
733
733
733
874
874
874

GE

Suggested

Replacement

CF= CONTACT FACTORY

33

Mfg. Prod. Line

MOT
MOT
MOT
MOT
MTO
MTO
MTO
MTO
MTO
MTO
MTO

SCR
SCR
SCR
SCR
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO

COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
OPTO COUPL
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

Page

Type

Page

C232B
C232C
C2320
C232E
H11C6
H11C3
H11A5
H11A2
H11A3
H13A2

874
874
874
874
1303
1299
1279
1275
1277
1307

H13A1
D44C7
044C10
D42R1
D42R2
045C7
D45C10
D44C4
044R1
D44R3

1309
1147
1147
1139
1139
1163
1163
1147
1159
1159

D45C4
D42R2
D44C5
D40N1
D40N4
D43C8
D45C6
D45C8
D45C8
D45H7

1163
1139
1147
1117
1117
1143
1163
1163
1163
1171

D45H7
D43C5
D43C8
D43C11
D42C5
D42C8
D42C11
D44C3
044C6
D44H4

1143
1143
1143
1135
1135
1135
1147
1147
1155

1171

044H7
D44C8
D44C8
D44C6
D44C8
D44H7
D45C3
D45C3
D44C6
D44C5
D44C4
D44C9
D44C8
D44C7
D45C6
D45C5
D45C4
D45C9
D45C8
D45C7

1147
1147
1147
1147
1163
1163
1163
1163
1163
1163

D45C5
D45C8
D44C12
D44C11
D44C10
D44C5
D44C8
D44C5
D44C8
D46C12

1163
1163
1147
1147
1147
1147
1147
1147
1147
1163

D45C11
D44C5
D44C8
D44C5
D44C8
D45C10
D44H7
D45H7
D45H7
D44C7

1163
1147
1147
1147
1147
1163
1155

D44H7
D45C2
D45C6
D44R6
D44R6
D42R1
D44R5
D44R3
D42R1
44R5

1155
1147
1147
1147
1147
1155
1163
1163
1147
1147

1171
1171
1147

1155
1163
1163
1159
1159
1139
1159
1159
1139
1159

Suggested

Suggested

GE

Replacement
Mfg. Prod. Line

Type
MJE3520
MJE3521
MJE370
MJE370K
MJE371
MJE371K
MJE488
MJE520
MJE520K
MJES21
MJE521K
MJE700
MJE701
MJE702
MJE703
MJE800
MJE801
MJE802
MJE803

MM1619

MM 1803
MM1812
MM2258
MM2259
MM2260
MM2261
MM2263
MM3001
MM3002
MM3003
MM30O4
MM3008
MM3009
MM3724
MM3725
MM3726
MM4019
MM4020
MM4429
MM4430
MOC1000
MOC1001
MOC1002
MOC1003
MOC1005
MOC1006
MOC1200
MP8111
MP8112
MP8211
MP8212
MP8221
MP8222

MPA

SERIES

MPS3638
MPS3702
MPS3703
MPS3704
MPS3705
MPS3706
MPS3838
MPS3838A
MPS4354
MPS4355
MPS4356
MPS5172
MPS6076
MPS6512
MPS6513
MPS6514
MPS6515
MPS6516
MPS6517
MPS6518
MPS6519
MPS6530
MPS6531
MPS6532
MPS6533
MPS6534
MPS6535
MPS6560
MPS6561
MPS6562
MPS6663
MPS6565
MPS6565
MPS6566
MPS6566
MPS6571

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
MOTA OPTO COUPL
MOTA OPTO COUPL
MOTA OPTO COUPL
MOTA OPTO COUPL
MOTA OPTO COUPL
MOTA OPTO COUPL
MOTA OPTO COUPL
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
GF
GF
GF
GE
GF
GF
GE

GE
GF

GF
GF
GF
GF
GE
GF
GF
GF
GF
GF
GF
GE
GF
GE
GE

GE

GE
GE

PELLETS

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN

SIG
SIG
SIG
SIG
SIG
SIG

Type

Page

D44C2
D44C5
D45C2
D45C2
D45C6
D45H4
D44C8
D44C2
D44C2
D44C6
D44H4
D45E2
D45E2
545E3
D45E3
D44E2
D44E2
D44E3
D44E3
D44C1

D40E1
D40N1
D44R2

D44R2
D44R2
D40E7
D44R2
D44R1
D40N1

D40N3
D40E1

D44R2
D44R2
D40E1
D40E7

D43C8
D41E5

D45C3
040E5
D40E5
4N26
4N25
4N27
4N28
H11A520
H11A520
4N30
D44C8
D44C8
D44C5
D44C6
D44C5
D44C6

Type

Page

MPS6573
MPS6574
MPS6575
MPS6576
MPS8097
MPS A70
MPS D05

1147
1147
1163
1163
1163
1163
1147
1147
1147
1147

MPS D06
MPS D55
MPS 056
MPS L01
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20
MPSA55
MPSA56
MPSA65
MPSA66
MPSA70

1155
1167
1167
1167
1167
1151
1151
1151
1151
1147

1109
1117
1159
1159
1159
1109
1159
1159
1117
1117

MPS-A09

MPSU01

MPSU01A
MPSU02
MPSU03
MPSU04
MPSU05
MPSU06
MPSU10
MPSU31
MPSU45
MPSU51
MPSU51A
MPSU52
MPSU55
MPSU56
MPSU95
MRD300
MRD3050

1109
1159
1159
1109
1109
1143
1129
1163
1109
1109
531
531
531
531
1285
1285

MRD3051
MRD3052
MRD3053
MRD3054
MRD3055
MRD3056
MRD310
MSA7505
MSA8505
MSA8506
MSA8508
MSP15
MSP20
MSP25
MSP30
MST105
MST15
MST20
MST20B
MST20S
MST25
MST30
MST30B
MST30S
MT1070
NCT200
NCT260

533
1147
1147
1147
1147
1147
1147

CF
1358
1360
1360
1363
1363
1363
1358
1358

GES4354
GES4355
GES4356
1364
1364
1365
1365
1365

NL511-3
NL511-4

NL511-6

1365
1365
1365
1365
1365
1368
1368
1368
1370
1370

NL570A
NL570B
NL570C
NL570D
NL570E
NL570M
NL576B
NL576C
NL576D
NL576E
NL576M
NL576N
NL576P
NL576PA
NL576PB
NL576S
NL576T
NL577B
NL577C

1370

GES6560
GES6561
GES6562
GES6563
MPS6565

CF
CF
CF
CF
1372

MPS6566

1372

GE

Replacement

1372
1372

CF

CF= CONTACT FACTORY

34

Mfg.

Prod. Line

Page

SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN
SIG TRAN

CF
CF
CF
CF
CF
1357
CF
CF
CF
CF

TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
TRAN
SIG TRAN
GE
SIG TRAN
GE
SIG TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
MOTA OPTO DET
MOTA OPTO DET
MOTA OPTO DET
MOTA OPTO DET
MOTA OPTO DET
MOTA OPTO DET
MOTA OPTO DET
MOTA OPTO DET
MOTA OPTO DET
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
NSC OPTO COUPL
NSC OPTO COUPL
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR

CF
1345
1345
1347
1349
1349
1351
1353
1353
1355

GE

GE
GE
GE
GE
GE
GE
GE
GE
GE

SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG
SIG

Type

Page

1355
1357

MPS-A09
D40E1
D40E5
D40E5
D40P1
D40P3
D40E5
D40E7

CF
1109
1109
1109
1121
1121
1109
1109

D40N3

1117
1109
1113
1129
1129
1129
1129
1129
1129
1337

D40E7
D40K2
D41E1
D41E5
D41E5
D41E5
D41E7
D41K2
L14G1

L14G1
L14G2
D44C1
D44C1

1337
1337
1337
1337
1337
1337
1337
1337
1147
1147

D42C1
D42C1
D44R1
D44R1
D44R1
D44R3
D44R2
D44R1
D44R1
D44R1

1136
1135
1159
1159
1159
1159
1159
1159
1159
1159

D44R2
D44R1
D44R3
D44R3
D44R4

1159
1159
1159
1159
1159
1109
1279
1279
CF
CF

L14G2
L14G2
L14G2
L14G2
L14G2
L14G2

D40E1

H11A5
H11A5
C137NX74
C137PX74

C137PBX74
C234A
C234B
C234C
C234D
C234E

C234M
C147B
C147C
C147D
C147E

C147M
C147N
C147P
C147PA
C147PB
C147S
C147T
C147B
C147C

CF
880
880
880
880
880
880
799
799
799

799
799
799
799
799
799
799
799
799
799

Suggested

GE

Suggested

Replacement
Type
NL577D
NL577E
NL577M
NL577N
NL577P
NL577PA
NL577PB
NL577S
NL577T
NL578B
NL578D
NL578E
NL578M
NL578N
NL578P
NL578PA
NL578PB
NL578S
NL578T
NL579B
NL579C
NL579D
NL579E
NL579M
NL579N
NL579P
NL579PA
NL579PB
NL579S
NL579T

NLC135A
NLC135B
NLC135C
NLC135D
NLC135E
NLC135M
NLC135N
NLC135S
NLC35A
NLC35B
NLC35C
NLC35D
NLC3BE
NLC35G
NLC35H
NLC35M
NLC35N
NLC35S
NLC36A
NLC36B
NLC36C
NLC36D
NLC36E
NLC36G
NLC36H
NLC36M
NLC36N
NLC36S
NLC37A
NLC37B
NLC37C
NLC37D
NLC37E

NLC37M
NLC38A
NLC38B
NLC38C
NLC38D
NLC38E
NLC38G

NLC38H
NLC40A
NLC40B
NLC40C
NLC40D
NLC40E
NLC40G
NLC40H
NLC45A
NLC45B
NLC45C
NLC45D
NLC45E
NLC45G
NLC45H

NLC45M
NLC45N
NLC45P
NLC45PA
NLC45PB

Mfg. Prod. Line

NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR
NAT SCR

Page

Type
C147D
C147E

C147M
C147N
C147P
C147PA
C147PB
C147S
C147T
C147B
C147D
C147E

C147M
C147N
C147P
C147PA
C147PB
C147S
C147T
C147B

C147C
C147D
C147E

C147M
C147N
C147P
C147PA
C147PB
C147S
C147T

C137AX49
C137BX49
C137CX49
C137DX49
C137EX49
C137MX49
C137NX49
C137SX49
C35A
C35B
C35C
C35D
C35E

C35G
C35H

C35M
C35N
C35S
C36A
C36B
C36C
C36D
C36E

C36G
C36H

C36M
C36N
C36S
C37A
C37B
C37C
C37D
C37E

C37M
C38A
C38B
C38C
C38D
C38E
C38G

C38H
C140AX158
C140BX158
C140CX158
C140DX158
C139E10E
C140BX158
C140CX158
C45A
C45B
C45C
C45D
C45E

C45G
C45H
C45M
C45N
C45P
C45PA
C45PB

GE

Replacement

Page

Type

799
799
799
799
799
799
799
799
799
799

NLC45S
NLC45T
NLC46A
NLC46B
NLC46C
NLC46Q
NLC46E
NLC46G
NLC46H

799
799
799
799
799
799
799
799
799
799

NLC46N
NLC46P
NLC46PA
NLC46PB
NLC46S
NLC46T
NL-1580
NL-578
NL-579
NL-C150

799
799
799
799
799
799
799
799
799
799

NL-C151
NL-C152
NL-C153
NL-C154
NL-C155
NL-C156
NL-C157
NL-C178
NL-C180
NL-C181

CF
CF
CF
CF
CF
CF
CF
CF
675
675

NL-C185
NL-C350
NL-C354
NL-C355
NL-C380
NL-C385
NL-C45
NL-C46
NL-C501
NL-C50

675
675
675
675
675
675
675
675
328
328

NL-C52
NL-C55
NL-C56
NL-C601
NL-C60
NL-C62
NL-F150
NL-F151
NL-F152
NL-F153

328
328
328
328
328
328
328
328
679
679

NL-F154
NL-F155
NL-F156
NL-F157
NL-F158
NL-F159
NL-F180
NL-F185
NL-F358
NL-F380

679
679
679
679
683
683
683
683
683
683

NL-F385
NL-F390
NL-F394
NL-F395
NL-F397
NL-F398
NL-F701
OP 130

Mfg.

Prod. Line

NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT
NAT

0P131
0P132

OPI
OPI
OPI

IRLED
IRLED
IRLED

683
CF
CF
CF
CF
775
CF
CF
689
689

OP133
OPB120
OPB242
0PB243
0PB800
0PB800S
0PB803
0PB806
OPB813
OPB814

OPI
OPI
OPI
OPI
OPI
OPI
OPI
OPI
OPI
OPI

689
689
689
689
689
689
689
689
689

OPI2150
OPI2151
OPI2152
OPI2153
OPI2250
OPI2251
OPI2252
OPI2253
OPI3150
OPI3151

OPI
OPI
OPI
OPI
OPI
OPI
OPI
OPI
OPI
OPI

NLC46M

CF= CONTACT FACTORY

35

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page

Type
C45S
C45T
C46A
C46B
C46C
C46D
C46E
C46G
C46H

C46M

Page
689
689
689
689
689
689
689
689
689
689

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C390/C391
C147
C147
C150

689
689
689
689
689
689
936
799
799
818

C155
C152
C157
C154
C155
C156
C157
C180
C180
C180

823
818
823
823
823
823
823
842
842
842

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C185
C350
C354
C355
C380
C386
C45
C46
C390/C391
C50

851
886
891
891
912
921
689
689
936
707

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C52
C154
C156
C440/C441
C60
C62
C150
C155
C152
C157

818
823
823
966
712
712
818
823
823
823

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C154
C155
C156
C157
C158
C159
C180
C185
C358
C380

823
823
823
823
830
830
842

SCR
SCR
SCR
SCR
SCR
SCR
SCR

C385
C390
C394
C395
C397
C398
C701/C450
LED56
LED55B
LED55C

IRLED

OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL

C46N
C46P
C46PA
C46PB
C46S
C46T

LED55C
H13A1
H13A1
H13B1
H13A1
H13A1
H13B1
H13A1
H13A1
H13B1

H11A4
H11A4
H11A2
H11A1
H11A3
H11A3
H11 A3
H11A1
H11B2
H11B2

851

898
912
921

936
947
947
958
958
1029
1347
1347
1347
1347
1309
1309
1311

1309
1309
1311
1309

1309
1311

1277
1277
1275
1275
1277
1277
1277
1275
1293
1293

Suggested

Suggested GE
Re placement

Type

Mfg. Prod. Line

OPI3152
OPI3153
OPI3251
OPI3252
OPI3253
PA SERIES
PPR1006
PPR1008
PS020
PS030

OPI
OPI
OPI
OPI
OPI

PS035
PS08
PS 120
PS 130
PS135

PS18
PS220
PS230
PS235
PS28

PS320
PS330
PS355
PS38
PS420
PS430
PS435
PS48
PS520
PS530
PS535
PS58
PS620
PS630
PS635
PS68
PSIB110
PSIBD125
PSIBD150
PSIC160

GE

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
PS

OPT0 COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
GE-MOV
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

PSI
PSI
PSI

RECTIFIER
RECTIFIER

SCR

PSIC235
PSICD160
PSICD250
PSIF180
PSIF220
PSIF300
PSIF400
PSIF500
PSIF600
PSIFD600

PSI
PSI
PSI
PSI
PSI
PSI
PSI
PSI
PSI
PSI

SCR

PSIFD900
PSIG300
PSIG400
PSIG500
PSIG650
PSIG850
PSIG950
PSIGD1400
PSIGD800
PSIH1000

PSI
PSI
PSI
PSI
PSI
PSI
PSI
PSI
PSI
PSI

RECTIFIER

PSIH1200
PSIH1400
PSIH1600
PSIH1800
PSIH2000
PSIH800
PSIHD1500
PT010
PT015
PT025

PSI
PSI
PSI
PSI
PSI
PSI
PSI

SCR
SCR
SCR
SCR
SCR
SCR

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

TRIAC
TRIAC
TRIAC

PT030
PT040
PT06
PT08
PT110
PT115
PT125
PT130
PT140
PT1544
PT1545
PT1558
PT1569
PT16
PT18
PT210
PT215
PT225
PT230
PT240

HUT
HUT
HUT
HUT
HUT
HUT
HUT

RECTIFIER
RECTIFIER

SCR
SCR
SCR
SCR
SCR
SCR
RECTIFIER

SCR
SCR
SCR
SCR
SCR
SCR
RECTIFIER
RECTIFIER

SCR

RECTIFIER

Page

Type

D42C5
D42C8
C232F
C229FX11

1135
1135
874
CF

C229FX11
C222F
:232A
C229AX11
:229AX11
C222A
C232B
C229BX11
C229BX11
C222B

CF
862
874
CF
CF
862
874
CF
CF
862

PT315
PT325
PT330
PT340
PT3502
PT3503
PT36
PT38
PT410
PT415

C232C
C229CX11
C229CX11
C222C
C232D
C22DX11
C229DX11
C222D
C232E
C229EX11
C229EX11
C222E

874
CF
CF
862
874
CF
CF
862
874
CF

PT425
PT430
PT440
PT4690
PT46
PT4816
PT48
PT510
PT515
PT525

PT530
PT540
PT5693
PT56
PT58
PT600

C165

CF
862
874
CF
CF
862
838

A180
A180
C185/C186

581
581
851

1432

C185/C186
A190
A190
C390/C391
C390/C391
C390/C391
C390/C391
C390/C391
C390
A430/A540

851

A430/A540
C390/C391
C390/C391
C390/C391
C390/C391
C390/C391
C440/C441
A570/A640
A430/A540
C460/C451
C450/C451
C450/C451
C450
C450
C450
C450/C451
A570/A640
SC246B
SC251B
SC261B

600
936
936
936
936
936
966
613
600
CF

PT601
PT610
PT612
PT615

PT625
PT630
PT640
PT6618
PT665
PT6696
PT66
PT68
PT896

PWR
PWR
PWR
PWR

D40E7
D40E7
D40E7
D40E7
SC241B
SC246B
SC246B
SC251B
SC261B
SC266B
SC266B

1109
1109
1109
1393
1393
1393
1393
1393
1393
1393

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

D44R1
D40E5
D40E7
D42C7
D40E5
D40E5
D40E7

TRIAC
TRIAC
TRIAC

SC241B
SC246B
SC246D

TRIAC
TRIAC
TRIAC
TRIAC

SC251D
SC261D
SC266D
SC266D
D40E5

PWR TRAN
PWR TRAN

D40E1

HUT
HUT
HUT
HUT
HUT
HUT
HUT

TRIAC
TRIAC
TRIAC
TRIAC

SC241D
SC246D
SC246D
SC251D

TRIAC
TRIAC
TRIAC

HUT

TRIAC

SC261D
SC266D
SC266D
D42C4
SC241D

PWR TRAN

D40E1

HUT
HUT
HUT
HUT
HUT
HUT

TRIAC
TRIAC
TRIAC
TRIAC

PWR TRAN

TRIAC
TRIAC

PWR TRAN
HUT
HUT

TRIAC
TRIAC

PWR TRAN
PWR TRAN
HUT
HUT
HUT
HUT
HUT

SC246D
SC246E
SC251E
SC261E
SC266E
SC266E
D44C1
SC241E
SC246E
D42C5
D42C5

TRIAC

SC246M

PWR TRAN

D42C8

TRIAC
TRIAC
TRIAC
TRIAC

PWR TRAN
PWR TRAN
PWR TRAN

SC251M
SC261M
SC266M
SC266M
D40E1

D44C8
D40E5

Page
1159
1109
1109
1135
1109
1109
1109
1393
1393
1393
1393
1393
1393
1393
1109
1109
1393
1393
1393
1393
1393
1393
1393
1135
1393
1109
1393
1393
1393
1393
1393
1393
1147
1393
1393
1135
1135
1393
1135
1393

1393
1393
1393
1109
1147
1109
1393
1393
1109
1377

SC241M
SC246M

PWR TRAN

Q2001L4

TCE

TRIAC

D40E7
SC136B

Q2001M

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC136B
SC136B
SC140B
SC140BX125
SC136B
SC136B
SC240B4
SC240B2
SC140BX125
SC141BX125

1377
1377
1381

TCF
TCE
TCE
TCE
TCE
TCF
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC240B4
SC240B2
SC241B
SC240B
SC140BX125
SC240B2
SC141BX125
SC245B4
SC245B2
SC246B

1393
1393
1393
1393
CF
1393
CF
1393
1393
1393

TCE
TCF
TCF
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
CF
1393
CF
1393
1393
1393
1393
CF
1393

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC245B
SC142BX125
SC245B2
SC143BX125
SC245B4
SC245B2
SC246B
SC245B
SC147BX125
SC245B2
SC146BX125
SC250B4
SC250B2
SC251B
SC250B
SC250B2
SC251B
SC260B4
SC260B2
SC261B

Q2008B
Q2008G
Q2008H
Q2008L4
Q2008N
Q2008R4
Q2010A
Q2010B
Q2010G
Q2010H
Q2010L4
Q2010N
Q2010R4
Q2015A
Q2015B
Q2015G
Q2015H
Q2015N
Q2015R5
Q2025C
Q2025D
Q2025G

36

Type

TRIAC
TRIAC

0.2008A

CF= CONTACT FACTORY

HUT
HUT
HUT
HUT
HUT
HUT
HUT

Page

HUT
HUT

Q2001P
Q2003L3
Q2003L4
Q2003P3
Q2O03P
Q2004A
Q2004B
Q2004L4
Q2004R4
Q2006A
Q2006B
Q2006G
Q2006H
Q2006L4
Q2006N
Q2006R4

CF
CF
CF
CF
CF
CF
613
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1109

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

PT26
PT28
PT310

643
643
936
936
936
936
936
936
600

SC266B
SC266B
SC241B
SC246B
SC246B
SC251B
SC261B
SC266B
SC266B

Mfg. Prod. Line

PT2525A
PT2620
PT2630
PT2635
PT2640
PT2660
PT2670

1293
1293
1293
1293
1293

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TRAN
TRAN
TRAN
TRAN

Type

Page

H11B3
H11B1
H11B1
H11B1
H11B1

C232M
C229MX11
C229MX11
C222M

GE

Replacement

CF
1377
1377
1393
1393

CF
CF

CF
1393
1393
1393
1393
1393
1393
1393
1393
1393

Suggested GE
Replacement

Type
Q2025H
Q2025N
Q2040C
Q2040D
Q4001L4
Q4001M
Q4001P
Q4003L3
Q4003L4
Q4003P3
Q4003P
Q4004A
Q4004B
Q4004L4
Q4004R4
Q4006A
Q4006B
Q4006G
Q4006H
Q4006L4
Q4006N
Q4006R4
Q4008A
Q4008B
Q4008G
Q4008H
Q4008L4
Q4O08N
Q4008R4
Q4010A
Q4010B
Q4010G
Q4010H
Q4010L4
Q4010N
Q4010R4
Q4015A
Q4015B
Q4015G
Q4015H
Q4015N
Q4015R5
Q4025C
Q4025D
Q4025G
Q4025H
Q4025N
Q4040C
Q4040D
Q5004A
Q5004B
Q5004L4
Q5004R4
Q5006A
Q5006B
Q5006G
Q5006H
Q5006L4
Q5006N
Q5006R4
Q50O8A
Q5008B
Q5008G
Q5008H
Q5008L4
Q5008N
Q5O08R4
Q5010A
Q5010B
Q5010G
Q5010H
Q5010L4
Q5010N
Q5010R4
Q5015A
Q5015B
Q5015G
Q5015H
Q5015N
Q5015R5
Q5025C
Q5025D
Q5025G
Q5025H
Q5025N
Q5040C
Q5O40O
Q6004A
Q6004B
Q6004L4

Mfg. Prod. Line

Page

Type

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC260B
SC260B2
SC265B4
SC265B2
SC136D
SC1360
SC136D
SC1400
SC140DX125
SC136D

1393
1393
1393
1393
1377
1377
1377
1381
CF
1377

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1377
1393
1393
CF

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC136D
SC240D4
SC24002
SC140DX125
SC141DX125
SC240D4
SC240D2
SC241D
SC240D
SC140DX125
SC240D2
SC141DX125
SC245D4
SC245D2
SC246D
SC245D
SC142DX125
SC245D2
SC143DX125
SC245D4

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TCE
TCE
TCE
TCE

TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC245D2
SC2460
SC245D
SC1470X125
SC245D2
SC146DX125
SC250D4
SC250D2
SC251D
SC250D
SC250D2
SC151D
SC260D4
SC260D2
SC2610
SC260D
SC260D2
SC265D4
SC26502
SC240E4
SC240E2
SC140EX125
SC141EX125
SC240E4
SC240E2
SC241E
SC240E
SC140EX125
SC240E2
SC141EX125
SC245E4
SC245E2
SC246E
SC245E
SC142EX125
SC245E2
SC143EX125
SC245E4
SC245E2
SC246E

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC245E
SC147EX125
SC245E2
SC146EX125
SC250E4
SC250E2
SC251E
SC250E
SC250E2
SC151E

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC260E4
SC260E2
SC261E
SC260E
SC260E2
SC265E4
SC265E2

SC240M4
SC240M2
SC140MX125

GE

Replacement

Page

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

TCE

Suggested

Type
Q6004R4
Q6006A
Q6006B
Q6006G
Q6O06H
Q6006L4
Q60O6N
Q6006R4
Q6008A
Q6008B

Q6008G
Q6008H
Q6008L4
Q6008N
Q6008R4
Q6O10A
Q6O10B
Q6010G
Q6O10H
Q6010L4
Q6010N
Q6010R4
Q6015A
Q6015B
Q6015G
Q6015H
Q6015N
Q6015R5
Q6025C
Q6025D

CF
1393
1393
1393
1393
CF
1393
CF
1393
1393
1393
1393
CF
1393
CF
1393
1393
1393
1393
CF
1393

Q6025G
Q6025H
Q6025N
Q6040C
Q6040D
R502"08
R502"10
R600"20
R600-25
R602"20
R602"25
R610"2O
R610"25
R620"3O
R620"40
R622"35
R622-40
R720"06
R720"09
R720"12
R722"05
R722"06
R722-08
R920"
RCA105
RCA205
RCA29
RCA29A
RCA29B
RCA30
RCA30A
RCA30B
RCA31
RCA31A
RCA31B
RCA32
RCA32A
RCA32B
RCA370
RCA371

CF
1393
1393
1393
1393
1393
1381

1393
1393
1393
1393
1393
1393
1393
1393
1393
CF
CF
1393
1393
1393
1393
CF
1393
CF

1393
1393
1393
1393
CF
1393
CF
1393
1393
1393
1393
CF
1393
CF
1393
1393
1393
1393
1393

RCA41

RCA41A
RCA41B
RCA42
RCA42A
RCA42B
RCA520
RCA521
RM3005
RM3022

1381

1393
1393
1393
1393
1393
1393
1393
1393
1393

RT116
RTB0103
RTB0106
RTB0110
RTBO120
RTB0130
RTB0140
RTC0103
RTC0106
RTC0110

CF

CF= CONTACT FACTORY

37

Mfg.
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
ICE
ICb
ICE
ICE
ICE

TCE
ICE
ICb
ICE
ICb
ICE
ICb
ICE
ICb
ICb

TCE
ICE
ICb
ICE
ICE

Prod. Line
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
WEST RECT
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page

Type
SC141MX125
SC240M4
SC240M2
SC241M
SC240M
SC140MX125
SC240M2
SC141MX125
SC245M4
SC245M2
SC246M
SC245M
SC142MX125
SC245M2
SC143MX125
SC245M4
SC245M2
SC246M
SC245M
SC147MX125
SC245M2
SC146MX125
SC250M4
SC250M2
SC251M
SC250M
SC250M2
SC151M
SC260M4
SC260M2
SC261M
SC260M
SC260M2
SC265M4
SC265M2

A177
A177
A190
A190
A197
A197
A190
A190
A390
A390
A397
A397
A430/A540
A430/
A570/A640
A437
A437
A696
A570/A640
D45H4
D45H4
044C4
D44C7
D44C10
D45C4
D45C7
D45C10
D44C3
D44C6
D44C9
D45C3
D45C6
D45C9
045C2
D45C6
D44HF
D44H7
D44H10
D45H4
345H7
D45H10
344C2
344C6
340E7

D40C4
040E5
C5F

C5A
C5A
C5B
C5C
C5D
C103Y
C103YY
C103A

Page
CF
1393
1393
1393
1393
CF
1393
CF
1393
1393
1393
1393
CF
1393
CF
1393
1393
1393
1393
CF
1393
CF
1393
1393
1393
1393
1393
1381
1393
1393

1393
1393
1393
1393
1393
577
577
643
643
588
588
643
643
592
592
596
596
600
600
613

603
603
616
613
1171
1171
1147
1147
1147
1163

1163
1163
1147
1147
1147
1163
1163
1163
1163
1163
1155
1155
1155
1171
1171
1171

1147
1147
1109
1101
1109
653
653
653
653
653
653
716
716
716

Suggested

Suggested

GE

Replacement
Type

Mfg. Prod. Line

RTC0120
RTC0130
RTC0140
RTJ0103
RTJ0106
RTJ0110
RTJ0120
RTJ0130
RTJ0140
RTJ0201

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page

716
716
716
858
858
858
858
858
858
858

RTS0605
RTS0610
RTS0620
RTS0630
RTS0640
RTS0650
RTS0660
RTS0702
RTS0705
RTS0710

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

RTS0720
RTS0730
RTS0740
RTS0750
RTS0760
RTS1002
RTS1005
RTS1010
RTS1020
RTS1040

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C222M

862

RTS1060
RTS1605
RTS1610
RTS1620
RTS1640
RTS1660
RTS2505
RTS2510
RTS2520
RTS2540

862
862
862
862
862
862
862
862
862
862

RTS2560
RTT0502
RTT0505
RTT0510
RTT0520
RTT0530
RTT0540
RTT0550
RTT0560
RTT2505

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C229M

862
862
862
862
862

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C228A
C228B
C228D
C228M
C230U

671
671
671
671
671

RTT2510
RTT2520
RTT2540
RTT2560
RTU0102
RTU0105
RTU0110
RTU0120
RTU0130
RTU0140

671
747
747
747
747
747
747
747
747
747

RTU0150
RTU0160
RTU0202
RTU0205
RTU0210
RTU0220
RTU0230
RTU0240
RTU0250
RTU0260

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

C230E

747
747
747
747
747
747
747
747
747
763

RTU0602
RTU0605
RTU0610
RTU0620
RTU0630
RTU0640
RTU0650
RTU0660
RTU0705
RTU0710

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

763
763
763
763
862
862
862
862
862
862

RTU0720
RTU0730
RTU0740
RTU0750
RTU0760
RTU1005
RTU1010
RTU1020
RTU1040
RTU1060
RTU1605
RTU1610
RTU1620
RTIM640
RTU1660
RTU2505
RTU2510
RTU2520
RTU2540
RTU2560

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

C103B
C103C
C103D
C203Y
C203YY
C203A
C203B
C203C
C203D

RTJ0203
RTJ0206
RTJ0210
RTJ0215
RTJ0220
RTJ0225
RTJ0230
RTL1510
RTL1520
RTL1540

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C203Y
C203YY
C203A
C203G
C203B
C203C
C203C
ZJ436A
ZJ436B
ZJ436D

858
858
858
858
858
858
858
CF
CF
CF

RTL1560
RTN0102
RTN0105
RTN0110
RTN0120
RTN0130
RTN0140
RTN01B0
RTN0160
RTN0202

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

ZJ436M
C15U
C15F
C15A
C15B
C15C
C15D

CF
671
671
671
671
671
671
671
671

RTN0205
RTN0210
RTN0220
RTN0230
RTN0240
RTN0250
RTN0260
RTN0302
RTN0305
RTN0310

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

RTN0320
RTN0330
RTN0340
RTN0350
RTN0360
RTN0802
RTN0805
RTN0810
RTN0820
RTN0840
RTN0860
RTR0202
RTR0205
RTR0210
RTR0220
RTR0230
RTR0240
RTR0260
RTR0260
RTR0302
RTR0305
RTR0310
RTR0320
RTR0330
RTR0340
RTR0350
RTR0360
RTR0620
RTR0660
RTR1005
RTR1010
RTR1020
RTR1040
RTR1060
RTS0202
RTS0205
RTS0210
RTS0220
RTS0230
RTS0240
RTS0250
RTS0260
RTS0502
RTS0505
RTS0510
RTS0520
RTS0530
RTS0540
RTS0550
RTS0602

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

C15M
C220U
C220F
C220A
C220B
C220C
C220D
C220E

C220M
C220U
C220F

C220A
C220B
C220C
C220D
C220E

C220M
C15U
C15F

C15A
C15B
C15D

C15M
C122U
C122F
C122A
C122B
C122C
C122D
C122E

C122M
C122U

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C122F

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C126A2
C126B2
C126D2

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C122A
C122B
C122C
C122D
C122E

C122M
C122B2

C122M2
C126F2

C126M2
C222U
C222F
C222A
C222B
C222C
C222D
C222E

C222M
C222UX304
C222FX304
C222AX304
C222BX304
C222CX304
C222DX304
C222EX304
C232UX245

Type

Mfg. Prod. Line

Page

C15E

Page

Type

Type

C203Q

GE

Replacement

862
862
CF
CF
CF
CF
CF
CF
CF
CF

CF= CONTACT FACTORY

38

TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC
TEC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C232FX245
C232AX245
C232BX245
C232CX245
C232DX245
C232EX245

C232MX245
C229U
C229F

C229A
C229B
C229C
C229D
C229E

C229M
C222U
C222F
C222A
C222B
C222D
C232FX201
C232AX201
C232BX201
C232DX201

C232MX201
C229F
C229A
C229B
C229D
C140F
C140F

C140A
C140B

CHOC
C140D
C144E15E

C144M15M
C228F

C230F

C230A
C230B
C230C
C230D

C230M
C230U
C230F
C230A
C230B
C230C
C230D
C230E

C230M
C230UX245
C230FX245
C230AX245
C230BX245
C230CX245
C230DX245
C230EX245

C230MX245
C228F

C228A
C228B
C228C
C228E

C228M
C220F

C220A
C220B
C220D

C220M
C230FX201
C230AX201
C230BX201
C230DX201

C230MX201
C228F

C228A
C228B
C228D

C228M

Page
CF
CF
CF
CF
CF
CF
CF
868
868
868

868
868
868
868
868
862
862
862
862
862
862
CF
CF
CF
CF
CF
868
868
868
868
868
783
783
783
783
783
783
791
791
868

868
868
868
868
874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
CF
CF
CF
CF
CF
CF
CF
CF
868
868

868
868
868
868
868
862
862
862
862
862
CF
CF
CF
CF
CF
868
868
868
868
868

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

S0300K
S0300KS1
S0300KS2
S0300KS3

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

S0303R
S0303RS1
S0303RS2
S0303RS3
S0306B
S0306G
S0306H
S0306L
S0308B

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

S0308G
S0308H
S0308L
S0310B
S0310G
S0310H
S0310L
S0316B
S0316G
S0316H

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

S0325B
S0325G
S0325H
S0335G
S0335H
S0500K
S0500KS1
S0500KS2
S0500KS3
S0501M

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

S0501MS2
S0501MS3
S0503M
S0503MS1
S0503MS2
S0503MS3
S0506B
S0506G
S0506H

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

S0301M
S0301MS2
SO301MS3
S0303M
S0303MS1
S0303MS2
S0303MS3

S0506L
S05O8B
S0508G
S0508H
S0508L
S0510B
S0510G
S0510H
S0510L
S0516B
S0516G
S0516H
S0525B
S0525G
S0525H
S0535G
S0535H
S1000
S1000K
S1000KS1
S1000KS2

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

PWR TRAN

S1003RS1
S1003RS2

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

S1003RS3
S1006B
S1006G
S1006H
S1006L
S1008B
S1008G
S1008H
S1008L
S1010B

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

S1000KS3

S1001M
S1001MS2
S1001MS3
S1003M
S1003MS1
S1003MS2
S1003MS3

ICb

TCE
TCE

Page

Type

Page

C103YX180
C103YX180
C103Y
C103YX193

716
C
716

C6F
C5F
C6F

659
653
659
C

C107Y1X1
C106Y1X177

720

C107Y1
C107Y1X1

728
C
C
720
728
862
862
862
747
862

C106Y2X177
C106Y2
C107Y2
C220U2
C222U
C220U
C122U
C220U2
C222U
C220U
C122U
C220U2
C222U
C220U
C123F

C230U2
C232U
C230U
C230U2
C232U
C230U
C229U
C228U
C103YYX193
C103YYX180
C103YY
C103YYX193

862
862
747
862
862
862
755
874
874
874

659

C5F
C6F
C107F1X1

653
659
C

720
728
862
862
862
747

C220F2
C222F
C220F
C122F
C220F2
C222F
C220F
C123F
C230F2
C232F

862
862
862
747
862
862
862
755
874
874

C230F
C230F2
C232F
C230F
C229F
C228F
D42C1
C103AX193

C103AX180
CI 03 A
C103AX193
C6A
C5A
C6A
C107A1X1
C106A1X177
C106A1
C107A1
C106A1X177
C106A1
C107A1
C220A2
C222A
C220A
C122A
C220A2
C222A
C220A
C122A
C220A2

S106Y1
S106Y2

HUT
HUT
RCA
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

S107M1
S107M2
S 107-05

S107-1
S 107-2
S107-4

S107Y1

S107Y2
S1N1189

S1N1204A
S1N1616
S1N3911
S2000K
S2000KS1
S2000KS2
S2000KS3

716

S2001M
S2001MS2
S2001MS3
S2003M
S2003MS1
S2003MS2
S2003MS3

C
659
653
659
C

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

SSCF
SSCF
SSCF
SSCF

S107E2
S107F1
S107F2

874
874
874
874
868
868
1135
C

TCE
TCE

S 106-05
S106-1
S 106-2
S 106-4

S106Y
S107A1
S107A2
S107B1
S107B2
S107C1
S107C2
S107D1
S107D2
S107E1

C106F1
C107F1
C220F2
C222F
C220F
C122F

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

S106M1
S106M2
S106M
S106Q

S106E1
S106E2
S106E
S106F1
S106F2
S106F

C
716

Mfg. Prod. Line

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

HUT
HUT
RCA
HUT
HUT
RCA
HUT
HUT
RCA
HUT
HUT
RCA
HUT
HUT
RCA
HUT
HUT
RCA
HUT
HUT
RCA
RCA

S106C
S106D1
S10602
S106D

874
874
874
868
868

C6F

C106F1X177

Type
S1010G
S1010H
S1010L
S1016B
S1016G
S1016H
S1016L
S1025B
S1025G
S1025H
S1035G
S1035H
S106A1
S106A2
S106A
S106B1
S106B2
S106B
S106C1
S106C2

C106Y1

GE

Replacement

SSCF
SSCF
SSCF
SSCF

HUT
HUT
GE
GE
GE
GE
TCE
TCE
TCE
TCE
TCE

720
728
C
720

S2003RS1
S2003RS2
S2003RS3
S2006B

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

728
862
862
862
747
862
862
862
747
862

S2006G
S2006H
S2006L
S2008B
S2008G
S2008H
S2008L
S2010B
S2010G
S2010H

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

CF= CONTACT FACTORY

39

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Type
C222A
C220A
CI 23 A
C230A2
C232A
C230A
ZJ436A
C232A2
C232A
C230A
C229A
C228A
C106A1
C106A2
C106A1
C106B1
C106B2
C106B1
C106C!
C106C2
C106C1
C106D1
C106D2
C106D1
C106E1
C106E2
C106E1
C106F1
C106F2
C106F1

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
HI-REL
HI-REL
HI-REL
HI-REL

Page

C106M1
C106M2
C106M1
C106Q1
C108F1
C108A1
C108B1
C108D1
C106Y1
C106Y2

C106Y1

C107A1
C107A2
C107B1
C107B2
C107C1
C107C2
C107D1
C107D2
C107E1

C107E2
C107F1
C107F2

Page
862
862
755
874
874
874
CF
874
874
874
868
868
720
720
720
720
720
720
720
720

720
720
720
720
720
720
720
720
720
720
720
720
720
720
733
733
733
733
720
720

720
728
728
728
728
728
728
728
728
728

C108F1
C108A1
C108B1
C108D1
C107Y1

728
728
728
728
728
733
733
733
733
728

C107Y2

728

C107M1
C107M2

REC
REC
REC
REC

C103BX193
C103BX180
C103B
C103BX193
C6B
C5B
C6B
C107B1X1
C106B1X177
C106B1
C107B1
C106B1X177
C106B1
C107B1
C220B2

653
659
728
720
720
728
720
720
728
862

C222B
C220B
C122B
C220B2
C222B
C220B
C122B
C220B2
C222B
C220B

862
862
747
862
862
862
747
862
862
862

C
C

716
C
659

Suggested

Replacement

Replacement
Type

Mfg. Prod. Line

S2010L
S2016B
S2016G
S2016H
S2025B
S2025G
S2025H
S2030G
S2030H
S2060A

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

S2060B
S2060C
S2060D
S2060E
S2060F

S2060M
S2060Q
S2060Y
S2061A
S2061B

S2061C
S2061D
S2061E
S2061F

S2061M
S2061Q
S2061Y
S2062A
S2062B
S2062C

S2062D
S2062E
S2062F
S2062M
S2062Q
S2062Y
S2400A
S2400B
S2400D

S2400M
S2600B
S2600D

S2600M
S2610B
S2610D

S2610M
S2620B
S2620D

S2620M
S2800A
S2800B
S2800D
S2N491B
S3700B
S3700D

RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA

Type

Page

S6003RS3
S6006B
S6006G
S6006H
S6006L
S6008B
S6008G
S6008H
S6008L
S6010B

TCE
TCE
TCE
TCE
TCF
TCF
TCE
TCF
TCF
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

728
728
728
728
728
728

S6010G
S6010H
S6010L
S6016B
S6016G
S6016H
S6025B
S6025G
S6025H
S6035G

TCF
TCE
TCE
TCE
TCE
TCE
TCF
TCE
TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

747
747
747
747
747
747
747
747
747
747

S6035H
S6100C
S6100E
S6100S
S620OA
S6200B
S6200D

TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

747
747

S6210D

880
880
880
CF
CF
858
CF

S6220B
S6220D

C106B1
C106C1
C106D1
C106E1
C106F1

720
720
720
720
720
720
720
720
728
728

S6001M
S6001MS1
S6001MS2
S6001MS3
S6003M
S6003MS1
S6003MS2
S6003MS3

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C107C1
C107D1
C107E1
C107F1

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C107D1
C107E1
C107F1

C107M1
C107Q1
C107Y1
C107A1
C107B1
C107C1

C107M1
C107Q1
C107Y1

C116A
C116B
C116D
C116M
C122B
C122D
C122M
C122B
C122D
C122M
C122B
C122D
C122M
C122A
C122B
C122D

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
UJT

S5010M
S6000C
S6000E
S6000K
S6000KS1
S6000KS2
S6000KS3
S6000S

741
741
741
741

S6200M
S6210A
S6210B

S6210M
S6220A

CF

C234B
C234D

S3700M
S4000K
S4000KS1
S4000KS2
S4000S3

TCE
TCE
TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR

S4001M
S4001MS2
S4001MS3
S4003M
S4003MS1
S4O03MS2
S4003MS3

TCF
TCF
TCF
TCE
TCF
TCE
TCE
TCF
TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C6D
C5D
C60
C107D1X1
C106D1X177
C106D1
C107D1
C106D1X177
C106D1
C107D1
C220D2
C222D
C220D
C122D
C220D2
C222D
C220D
C122D
C220D2
C222D
C220D
C123D
C230D2
C232D
C230D
C230D2
C232D
C230D
C229D
C228D

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

728
728
728
728
728
728
728
728
728
728

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

HI-REL

TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

S6003RS1
S60O3RS2

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

S5010B
S5010D

RCA
RCA
RCA

S4006B
S4006G
S4006H
S4006L
S4008B
S4008G
S4O08H
S4008L
S4010B
S4010G
S4010H
S4010L
S4016B
S4016G
S4016H
S4025B
S4025G
S4025H
S4035G
S4035H

RCA
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE
TCE

755
874
874
874
874
874
874
868
868
720

C106Y1
C107A1
C107B1

C234M
C203DX193
C203DX180
C203D
C203DX193

Mfg. Prod. Line

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C123B
C230B2
C232B
C230B
C230B2
C232B
C230B
C229B
C228B
C106A1

GE

S4003RS1
S4003RS2
S40O3RS3

Type

Page

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C106M1
C106Q1

GE

Suggested

GE

S6220M
S6230A
S6230B
S6230D

S6230M
S6240A

659
653
659
C
C
720
728

S6240B
S6240D
S6240M
S6250A
S6250B
S6250D

S6250M
S6430A

720
728

S6430B

S6430D
S6430M
S6430N
S6431M
S6440A
S6440B
S6440D
S6440M
S6440N
S6450A
S6450B
S6450D
S6450M
S6450N

862
862
862
747
862
862
862
747
862
862
862
755
874
874
874
874
874
874
868
868

RCA
RCA
RCA
RCA
RCA
TCE
TCE
TCE
TCE

RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA

S715

CF = CONTACT FACTORY

40

S7410M
S7412M
S7430M

RCA
RCA
RCA

S8006H
S8008H

TCE
TCE

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

Page

Type
ZJ465B
ZJ465D

ZJ465M
C126C
C126E
C107M2X1
C106M2X177
C106M2
C107M2
C126S
C107M1X1
C106M1X177
C106M1
C107M1
C107M1X1
C106M1X177
C106M1
C107M1
C106M1X177
C106M1
C107M1
C220M2
C222M
C220M
C122M
C220M2
C222M
C220M
C122M
C220M2

Page
CF
CF
CF
763
763
C
C

720
728
763
C

C
720
728
C
C

720
728
C

720
728
862
862
862
747
862
862
862
747
862

862
862
755
874
874
874
874
874
874
868

C222M
C220M
C123M
C230M2
C232M
C230M
C230M2
C232M
C230M
C229M
C228M

868
CF
CF
CF
874
874
874
874
874
874

ZJ436C
ZJ436E
ZJ436S

C232A
C232B
C232D

C232M
C230A
C230B
C230D

C230M
C230A2
C230B2
C230D2

C230M2
C230A8
C230B8
C230D8

C230M8
C230A4
C230B4
C230D4

C230M4
C230A6
C230B6
C230D6

C230M6
C228A8
C228B8
C228D8

C228M8
C228N8
C144M30M
C228A4
C228B4
C228D4

C228M4
C228N4
C228A6
C228B6
C228D6

C228M6
C228N6

874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
874
868
868

868
868
868
791

868
868
868
868
868
868
868
868
868
868
1109

PWR TRAN

D40E1

SCR
SCR
SCR
SCR
SCR

C144M15M
C139M10M
C144M15M

791
775
791

C37N
C37N

679
679

Suggested GE
Replacement

Type

Mfg. Prod. Line

S8010H
S8016H

TCE
TCE

SCR
SCR

TCE
TCE
GE
GE
GE
GE
GE

SCR
SCR

S801

S8025H
S8035H
SC1 16

SC136A
SC1368
SC136D
SC137A
SC137B
SC137D
SC140
SC141B
SC141D
SC141E
SC141M
SC142B
SC142D
SC142E
SC142M
SC143
SC146B
SC146D
SC146E
SC146M
SC147
SC149
SC151B
SC151D
SC151E
SC151M
SC160
SC240B12
SC240B13
SC240B22.32
SC240B23.33
SC240B2.3

SC240B
SC240D12
SC240D13

Page

C37N
C37N

PWR TRAN
TRIAC
TRIAC
TRIAC
TRIAC

SCR
SCR
SCR

D42C1

C37N
C137N

SC246E13
SC246E

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SC251B12

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SC251B13
SC251B
SC251D12
SC251D13
SC251D
SC251E12
SC251E13
SC251E
SC251M12
SC251M13

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SC251M
SC260B12
SC260B13

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
139!
1393
1393

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393

SC245M22.32

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

CF
1393
1393
1393
1393
1393
1393
1393

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC245M12
SC245M13

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

1381
1381

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SC245E22.32
SC245E23.33
SC245E2.3
SC245E

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SC245D
SC245E12
SC245E13

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC245D23.33
SC245D2.3

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

1381
1381
1381
1381
1381
1381
1381
1381
1381
1381

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SC245B
SC245D12
SC245D13
SC245D22.32

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SC245B22.32
SC245B23.33
SC245B2.3

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC241D12
SC241D13
SC241D
SC241E12
SC241E13
SC241E
SC241M12
SC24IM13
SC241M
SC245B12
SC245B13

SC245M
SC246B12
SC246B13

CF
CF

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

SC240M

SC245M23.33
SC245M2.3

Page

1381
1381
1381
1381
1381
1381
1381
1381

GE
GE

SC241B12
SC241B13
SC241B

679
679
1135
679
775

Mfg. Prod. Line

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC240E

SC240M22.32
SC240M23.33
SC240M2.3

Type

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE

SC240M12
SC240M13

Page

SC246B
SC246D12
SC246D13
SC246D
SC246E12

SC240E22.32
SC240E23.33
SC240E2.3

SC240D
SC240E12
SC240E13

GE

Replacement

1374
1377
1377
1377
CF

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC240D22.32
SC240D23.33
SC240D2.3

Type

Suggested

SC246M12
SC246M13
SC246M
SC250B12
SC250B13
SC250B22.32
SC250B23.33
SC250B2.3

SC250B
SC250D12
SC250D13
SC250D22.32
SC250D23.33
SC250D2.3

SC250D
SC250E12
SC250E13
SC250E22.32
SC250E23.33
SC250E2.3
SC250E

SC250M12
SC250M13
SC250M22.32
SC250M23.33
SC250M2.3

SC250M

SC260B22, 32
SC260B23, 33
SC260B2. 3

SC260B
SC260D12
SC260D13
SC260D22, 32

SC260D23.33
SC260D2, 3

SC260D
SC260E12
SC260E13
SC260E22. 32
SC260E23, 33
SC260E2, 3

SC260E

SC260M12
SC260M13
SC260M22, 32
SC260M23, 33
SC260M2. 3

SC260M
SC261B12
SC261B13
SC261B
SC261D12
SC261D13
SC261D
SC261E12
SC261E13
SC261E
SC261M12
SC261M13

SC261M
SC265B2.3

SC265B

1393]
1393]

SC265D2.3

CF = CONTACT FACTORY

41

Type

Page

Suggested

Suggested

GE

Type
SC265D
SC265E2.3

SC266E
SC265M2.3

SC265M
SC266B
SC266D
SC266E

SC266M
SC40B
SC40D

Mfg. Prod. Line

Page

Type

Type

Page

Mfg. Prod. Line

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SDT3725
SDT3726
SDT3727
SDT3729
SDT3730
S0T3733
SDT3775
SDT3776
SDT3778
SDT4301

GE
GE
GE
GE
GE
GE
GE
GE
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

GE
GE
GE
GF
GE
GE
GF
GE
GF
GE

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

L14G2
L14G2

1147
1163
1109
1147
1163
1335
1335
1335
1337
1337

SDT4302
SDT4304
SDT4305
SDT4307
SDT4308
SDT4310
SDT4311
SDT4455
SDT4483
SDT4551
SDT4553
SDT4583
SDT4611
SDT4612
SDT4614
SDT4615
SDT5001
SDT50O2
SDT5006
SDT5007
SDT5011
SDT5012
SDT5501
SDT5502
SDT5506
SDT5507
SDT5511
SDT5512
SDT5901
SDT5902

L14G2
L14G1
L14G1
D44C6
D45C6
D44C6
D45C6
D44C8
D45C8
D44C5

1337
1337
1337
1147
1163
1147
1163
1147
1163
1147

SDT5906
SDT5907
SDT6001
SDT6011
SDT6013
SDT6031
SDT6101
SDT6102
SDT6103
SDT6104

D45C5
D44C8
D45C8
D42C6
D43C8
D43C6
D42C8
D42C6
D42C8
D42C6

1163
1147
1163
1135
1143
1143
1135
1135
1135
1136

SDT6105
SDT6106
SDT7401
SDT7402
SDT7411
SDT7412
SDT7414
SDT7415
SDT7511
SDT7512

D42C5
D43C5
D43C7
D43C6
D43C3
D43C7
D43C4
D43C7
D45C6
D45C8

1135
1143
1143
1143
1143
1143
1143
1143
1163
1163

SDT7514
SDT7515
SDT9001
SDT9002
SDT9003
SDT9004
SDT9005

D45C6
D45C7
D45C6
D45C8
D45C5
D45C8
D45C2
D45C5
D45C8
D45C3
D45C6
D45C8
D45C8
D45C8
D45C6
D45C4
D45C7
D45C6
D45C6
D45C8

1163
1163
1163
1163
1163
1163
1163
1163
1163
1163

SDT9009
SE3450-1
SE3450-2
SE3450-3
SE3451-1
SE3451-2
SE3451-3
SE3453-1
SE3453-2
SE3453-3

SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT

IRLED
IRLED
IRLED
IRLED
IRLED
IRLED
IRLED
IRLED
IRLED

1163
1163
1163
1163
1163
1163
1163
1163
1163
1163

SE3453-4
SE3455-1
SE3455-2
SE5450-1
SE5450-2
SE5450-3
SE5451-1
SE5451-2
SE5451-3
SE5453-1

SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT

IRLED
IRLED
IRLED
IRLED
IRLED
IRLED
IRLED
IRLED
IRLED
IRLED

SC40E
SC41B

SC41D
SC41E
SC45B

SC45D
SC45E
SC46B

SC46D
SC46E
SC50B

SC50D
SC50E
SC51B
SC51D
SC51E
SC60B
SC60D
SC60E
SD0345
SD0445
SD1023
SD1335
SD1445

GE

PWR
PWR
PWR
PWR
PWR

SD5410-1
SD5410-2
SD5410-3
SD5440-1
SD5440-2

SPT
SPT
SPT
SPT
SPT

SD5440-3
SD5440-4
SD5440-5

SPT
SPT
SPT

SDJ345
SDJ445
SDK345
SDK445
SDL345
SDL445

SDM345
SDM445
SDN345
SDN445
SDT3321
S0T3322
SDT3325
SDT3326
SDT3421
SOT3422
SDT3425
SDT3426
SDT3501
S0T3502
SDT3505
SDT3506
SDT3550
SDT3552
SDT3553
SDT3575
SDT3576
SDT3578
SDT3579
SDT3701
SDT3702
SDT3703
SDT3704
SDT3706
SDT3707
SDT3708
SDT3709

SDT3710
SDT3711
SDT3712
SDT3713
SDT3715
SDT3716
SDT3717
SDT3720
SDT3721
SDT3722

TRAN
TRAN
TRAN
TRAN
TRAN
OPTO DET
OPTO OET
OPTO DET
OPTO DET
OPTO DET
OPTO DET
OPTO DET
OPTO DET
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

D44C11
D45C11
D40E1

D44C5
D45C5
L14F1

LHF1
L14F1

GE

Replacement

Replacement

SDT9007
SDT9008

CF= CONTACT FACTORY

42

Page

Type

Page

D45C6
D45C6
D45C8
D45C6
D45C8
D45C6
D43C6
D43C8
D43C6
D42C5

1163
1163
1163
1163
1163
1163
1143
1143
1143
1135

D42C8
D42C6
D42C8
D42C6
D42C8
D42C6
D42C8
D40E5
D40E5
D42C4

1135
1135
1135
1135
1135
1135
1135
1109
1109
1135

D42C4
D42C4
D42C5
D42C8
D42C5
D42C8
D40E5
D40E7
D40E5
D40E7

1135
1135
1135
1135
1135
1135
1109
1109
1109
1109

D40E5
D40E7
D40E5
D40E7
D40E5
D40E7
D40E5
D40E7

D42C6
D42C8

1109
1109
1109
1109
1109
1109
1109
1109
1135
1135

D42C5
D42C7
D44C7
D44C5
D44C6
D44C5
D42C2
D42C4
D42C7
D42C2

1135
1135
1147
1147
1147
1147
1135
1135
1135
1135

D42C4
D42C4
D42C6
D42C8
D42C6
D42C8
D42C6
D42C8
D42C6
D44C8

1135
1135
1135
1135
1135
1135
1135
1135
1135
1147

D44C6
D44C8
D42C3
D42C5
D42C8
D42C3
D42C5
D42C8
D42C3
D42C5

1147
1147
1135
1135
1135
1135
1135
1135
1135
1135

D42C8
LED56F
LED56F
LED56F
LED56F
LED55BF
LED56CF
LED56F
LED56F
LED55BF

1135
1347
1347
1347
1347
1347
1347
1347
1347
1347

LED55CF
LED55BF
LED55CF
LED56
LED56
LED55B
LED56
LED55B
LED55B
LED56

1347
1347
1347
1347
1347
1347
1347
1347
1347
1347

Suggested

GE

Suggested

Replacement
Type

Mfg. Prod. Line

SE5453-2
SE5453-3
SE5453-4
SE5455-1
SE5455-2
SE5455-3
SE5455-4
SE7001

SPT
SP1
SP1
SP1

SPT
SPT
SPT

SE7020
SE7055
SE7056
SE8001
SE8002
SE8042
SE8542
SFT186
SFT187
SFT445

SIPT010
SIPT015
SIPT025
SIPT040
SIPT06
SIPT08
SIPT110
SIPT115
SIPT125
SIPT140
SIPT16
SIPT18
SIPT210
SIPT215
SIPT225
SIPT230
SIPT240
SIPT26
SIPT28
SIPT310
SIPT315
SIPT325
SIPT330
SIPT340
SIPT36
SIPT38
SIPT410
SIPT415

SIPT425
SIPT430
SIPT440
SIPT46
SIPT48
SIPT510
SIPT51S
SIPT525
SIPT630
SIPT540
SIPT56
SIPT58
SIPT610
SIPT615
SIPT625
SIPT630
SIPT640
SIPT66
SIPT68

SPS020
SPS030
SPS035
SPS08
SPS120
SPS130
SPS135
SPS18
SPS220
SPS230
SPS235
SPS28
SPS320
SPS330
SPS335
SPS38
SPS420
SPS430
SPS435
SPS48
SPS520
CF= CONTACT FACTORY

IRLED
IRLED
IRLED
IRLED
IRLED
IRLEO
IRLED

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

SE7002
SE7006

SG1009
SG1009A

Page

SPT
SPT

IRLED
IRLED

HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

Type

Page

Type

LED55B
LED55B
LED55B
LED55B
LED55C
LED55C
LED55C
D40N1
D40N1
D44R1

1347
1347
1347
1347
1347
1347
1347
1117
1117
1159

SPS530
SPS535
SPS58
SPS620
SPS630
SPS635
SPS68
SPT010
SPT015
SPT025

D44R4
D40N1
D40N3

1159
1117
1117
1109
1109
1109
1129
1117
1159
1109

SPT040
SPT06
SPT08
SPT110
SPT115
SPT125
SPT 140
SPT 16
SPT 18
SPT210

D40E1
D40E5
D40E1
D41E1
D40N1
D44R1
D40E7

GE

Replacement

1347
1347
1393
1393
1393
1393
1393
1393
1393
1393

SPT215
SPT225
SPT230
SPT240
SPT26
SPT28
SPT310
SPT315
SPT325
SPT330

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

LED55B
LED55C
SC245B2
SC250B2
SC260B2
SC265B2
SC240B2
SC245B2
SC245B2
SC250B2
SC260B2
SC265B2
SC240B2
SC246B2
SC245B2
SC250B2
SC260B2
SC265B2
SC265B2
SC240B2

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SPT340
SPT3440
SPT36
SPT38
SPT410
SPT415
SPT425
SPT430
SPT440
SPT46

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC245B2
SC245D2
SC250D2
SC260D2
SC265D2
SC265D2
SC240D2
SC245D2
SC245D2
SC250D2

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SPT48
SPT510
SPT515
SPT525
SPT530
SPT540
SPT56
SPT58
SPT610
SPT615

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC260D2
SC265D2
SC265D2
SC240D2
SC245D2
SC245E2
SC250E2
SC260E2
SC265E2
SC265E2

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

SPT625
SPT630
SPT640
SPT66
SPT68
SPX1873-1
SPX1873-2
SPX1873-3
SPX 1873-4
SPX1876-1

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC240E2
SC245E2

SC245M2
SC250M2
SC260M2
SC265M2
SC265M2
SC240M2
SC245M2

1393
1393
1393
1393
1393
1393
1393
1393
1393
874

SPX1876-2
SPX 1876-3

SPX26
SPX28
SPX2
SPX2E
SPX35
SPX36
SPX37
SPX4

SCR

C230F

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C228FX11
C228FX11
C220F
C230A
C228AX11
C228AX11
C220A
C230B
C228BX11
C2288X11

CF
CF
862
874
CF
CF
862
874
CF
CF

ST84027
ST84028
ST84029
STB567
STB568
STB569

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

C220B
C230C
C228CX11
C228CX11
C220C
C230D
C228DX11
C228DX11
C220D
C230E

862
874
CF
CF
862
874
CF
CF
862
874

STC1300
STC1336
STC1800
STC1850
STC1860
STC1862
STC4401
STC5202
STC5203
STC5205

SPX5
SPX6
ST2
ST4

_1_

43

Mfg.
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

Prod. Line

Page

SCR
SCR
SCR
SCR
SCR
SCR
SCR

C228EX11
C228EX11
C220E

C230M
C228MX11
C228MX11
C220M

TRIAC
TRIAC
TRIAC

SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
SPT
GE
GE

GE

CF
CF
862
874
CF
CF
862
1393
1393
1393

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC250B
SC260B
SC265B
SC265B
SC240B
SC245B
SC245D
SC250D
SC260D
SC265D

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

TRIAC

SC265D
D44R2
SC240D
SC245D
SC245D
SC250D
SC260D
SC265D
SC265D
SC240D
SC245D
SC245E
SC250E
SC260E
SC265E
SC265E
SC240E
SC245E
SC245M

1393
1159
1393
1393
1393
1393
1393
1393
1393
1393

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SC250M
SC260M
SC265M
SC265M
SC240M
SC245M

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
TRIGGER
TRIGGER

H13A1
H13A1
H13B1
H13B1
H13A1

STABISTER
STABISTER
STABISTER

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1393
1309
1309
1311
1311

1309

H13A1
H13B1
H11A520
H11A520
H11A550
H11A550
H11A5100
H11A5100
H11A5100
H11A550

1285
1285
1285
1285
1285
1285
1285

H11A550
H11A5100

1285
1285

D44R2
D44R2
D44R2

1159
1159
1159

D44C5
D44C5
D42C5
D42C7
D42C8
D42C5
D44C6
D45C5
D45C8
D45C4

1147
1147
1135
1135
1135
1135
1147
1163
1163
1163

1309
1311
1285

1405
1406

PWR TRAN
PWR TRAN
PWR TRAN
GE
GE

Page

SC245B
SC250B
SC260B
SC265B
SC240B
SC245B
SC245B
SC250B
SC260B
SC265B
SC240B
SC245B
SC245B

PWR TRAN
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT
HUT

Type

1410
1410
1410

DD

Suggested

Suggested

GE

Mfg. Prod. Line

Type

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

STC5206
STC5802
STC5803
STC5805
STC5806
STT4451
T1S92
T1S93
T1S97
T1S98

TRAN
SIGTRAN
SIG TRAN
SIG TRAN

SIG

T2313A
T2313B
T2313D
T2500B
T2500D
T2700B
T2700D
T2800B
T2800C
T2800D
T2800E

T2800M
T2801B
T2801C
T2801D
T2801E

T2801M
T2802B
T2802C
T2802D
T2802E

T2802M
T2850A
T2850B
T2850D
T400001008
T400001608
T400002208
T4000 11008
T4000 11608
T400012208
T400021008
T400021608
T400022208
T400031008
T40O03 608
T400032208
T400041008
T400041608
T400042208
T400051008
T400061608
T4000B2208
T400061008
T400061608
T400062208
T400072208
T400082208
T400092208
T400102208
1

RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR

WESY SCR
WESY SCR
WESV SCR

T4001 12208
T400 122208

WESY SCR
WESY SCR

T4100M
T4101M
T4110M
T4111M
T4120D
T4120M

RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA

T4121B
T4121D

T4121M
T4130B
T4130D

T4130M
T4131B
T4 1 3

T4131M
T4140B
T4140D

T4140M
T4141B
T4

T4141M
T4150B
T4150D

T41B0M
T4161B
T4151D
T4151M
T4700B

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

Page

Page

Type

Mfg.

Prod. Line

D45C7
D45C5
D45C8
D45C4
D45C7
D42C5
GES92
GES93
GES97
GES98

1163
1163
1163
1163
1163
1135
CF
CF
CF
CF

T4700D

RCA

TRIAC

WEST
WEST
WESY
WESY
WESY
WESY
WESY
WESY
WESY

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

SC136A
SC136B
SC136D
SC141BX125
SC141DX125
SC146BX125
SC146DX125
SC143BX125
SC143DX125
SC143DX125
SC143EX125
SC143MX125
SC141B
SC141D
SC141D
SC141E
SC141M
SC143B
SC143D
SC143D
SC143E
SC143M
SC142B
SC142BX125
SC142DX125
C230FX682
C230FX240

1377
1377
1377
CF
CF
CF
CF
CF
CF

Type

C228F

C230AX683
C230AX240
C228A
C230BX685
C230BX240
C228B
C230CX687
C230CX240
C228C
C230DX688
C230DX240
C228D
C230EX689
C230EX240
C228E
C230MX690
C230MX240
C228M
C137S
C137N
C137T
C137P
C137PA
C137PB
SC251M
SC246M13
SC250M
SC250M13
SC260D3
SC250M3
SC250B33
SC250D33
SC250M33
SC2SOB8
SC250D8
SC250M8
SC245B83
SC245D83
SC24SM83
SC250B4
SC250D4
SC250M4
SC245B43
SC245D43
SC24BM43
SC250B6
SC250D6
SC250M6
SC245B63
SC24SD63
SC245M63
SC151B2

GE

Replacement

Replacement

T500*'4005
T500*"80O5

T507014064AQ

T5070H084AQ
T507024054AQ
T507024O64AQ
T607024084AQ
T507034054AQ
T507034064AQ
T5O7O44054AQ
T507044064AQ
T5O7044O84AQ
T507054054AQ
T507054064AQ
T507054084AQ
T507064054AQ
T507064064AQ
T507064084AQ
T507074O54AQ
T507074064AQ
T5O7O84054AQ
T507084064AQ
T507094054AQ
T507104054AQ
T507114054AQ
T507124054AQ

CF
CF
CF
1381
1381
1381
1381
1381
1381
1381
1381

T507"40##
T507"70##
T507"80##

1381
1381
1381

T5 10"5007

T510"*8007

T520"130B
T600"1304
T600"1504
T600"1804

CF
CF
CF
CF
1044
CF
CF

T607"13##
T607"15##
T620"1304
T620"2004
T620"3004

1044
CF

T625"10##
T62J"15##
T62J"20##

CF
1044

CF
CF
1044
CF
CF
1044

T6401B
T6401D
T6401M
T6411B
T6411D

CF
CF
868
CF
CF
868
771

T6411M

771
771
771

T6430B
T6430D

771
771
1393
1393
1393
1393
1393
1393
1393
1393

T6431B
T6431D

1393
1393
1393
1393
1393
1393
1393
1393
1393
1393

T6450D

T6420B
T6420D

T6420M
T6421B
T6421D

T6421M
T6430M

T6431M
T6440B
T6440D

T6440M
T6441B
T6441D

T6441M
T6450B

T6450M
T6451B
T6451D

T6451M
T720"3504
T720"4604
T720"5504

T727"25##
T727"35##
T727"46##
T72H"25##
T72H"35##
T72H"46##

1393
1393
1393
1393
1393
1393
1393
1393
1393

T920"0603
T920"0703
T920**0803

T920"0903
TA7564
TA7566

1381

CF= CONTACT FACTORY

44

WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WESY SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
WEST SCR
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA
RCA

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

WEST
WEST
WEST
WEST
WEST
WEST
WEST
WEST
WEST
WEST
WEST
WEST
WEST

TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

PWR TRAN
PWR TRAN

Page

Type
SC151D2
C150
C50/C150
C165A
C164A
C158B
C165B
C164B
C158C
C165C

Page
1381

818
707
838
838
830
838
838
830
838

C158M
C165M
C164M

838
830
838
838
830
838
838
830
838
838

C158S
C165S
C158N
C165N
C158T
C158P
C158PA
C158PB
C48/C49
C164/C165

830
838
830
838
830
830
830
830
694
838

C164/C165
C49
C164/C165
C360
C 180X500
C 180X500
C 180X500
C184/C186
C184/C186
C380

838
701
838
886
842
842
847
851
851
912

C380
C380X500
C384
C384
C384

912
917

C164C
C158D
C165D
C164D
C158E
C165E
C164E

SC266BX50
SC266DX50
SC266MX50
SC265BX50
SC265DX50
SC265MX50
SC265B3X50
SC265D3X50
SC265M3X50
SC265B3X50
SC265D3X50
SC265M3X50
SC265B8X50
SC265D8X50
SC265M8X50
SC265B8X50
SC265D8X50
SC265M8X50
SC265B4X50
SC265D4XS0
SC265M4X50
SC265B4X50
SC265D4X50
SC265M4X50
SC265B6X50
SC265D6X50
SC265M6X50
SC265B6X50
SC265D6X80
SC265M6X50

921
92
921
CF
CF

CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF
CF

C390/C391
C390/C391
C602/C440
C388/C392
C388/C392

CF
CF
CF
CF
CF
936
936
1005
928
928

C398/C394
C398/C394
C398/C394
C398/C394
C440/C441
C450/C461
C450/C451
C4B0/C451
D44C8
D44C6

958
958
958
958
966
C
C
C
1147
1147

Suggested GE
Replacement

Type

Mfg. Prod. Line

TA7556
TA7557
TA7739
TA7740
TAG2-100
TAG2-200

PWR
PWR
PWR
PWR
TAGS
TAGS
TAGS
TAGS

TAG2-300
TAG2-400

TC106A2
TC106A3

SES
SES

TC106A4
TC106B2
TCI06B3
TC106B4
TC106C2
TC106C3
TC106C4
TC106D2

TC106D4

SES
SES
SES
SES
SES
SES
SES
SES
SES
SES

TC106F2
TC106F3
TC106F4
TC106Q2
TC106Q3
TC106Q4
TC106Y2
TC106Y3
TC106Y4
TD261

SES
SES
SES
SES
SES
SES
SES
SES
SES
GE

TD261A
TD262
TD262A

GE
Ub
GE
Gb

TC 10603

TD263
TD263A
TD263B
TD264

TD264A
TD265
TD265A

TD266
TD266A
TD9
TE105
TE155
TE205
TE305
TE35
TE405
TE55

tib
G'fc

GE
GE
GE
GE
GE
tit

GE
SSCF
SSCF
SSCF
SSCF
SSCF
SSCF
SSCF

TI486
TI487

TIC106A
TIC106B
TIC106C
TIC106D
TIC106F
TIC106Y
TIC116A
TIC116B
TIC116C
TIC116D
TIC116E
TIC116F
TIC116M
TIC126A
TIC126B
TIC126C
TIC126D
TIC126E
TIC126F

TIC126M
TIC226B
TIC226D
TIC236B
TIC236D
TIC246B
TIC246D
TIC3010
TIC3011
TIC3012
TIC3013
TIC3014
TIC44
TIC45
TIC46
TIC47

Tl
Tl
Tl
Tl
Tl
Tl

Tl
Tl
Tl
Tl

Tl
Tl
Tl

Tl
Tl
Tl

Tl
Tl
Tl
Tl

Tl
Tl

Tl
Tl
Tl
Tl

Tl
Tl

Tl
Tl
Tl
Tl
Tl

Tl
Tl

Till 11

Til

TIL112
TIL113

Til

Til

Page

TRAN
TRAN
TRAN
TRAN

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
TUNNEL 010
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL 010
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
TUNNEL DIO
SCR
SCR
SCR
SCR
SCR
SCR
SCR
PWR TRAN
PWR TRAN
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC
TRIAC

SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
SCR
OPTO COUPL
OPTO COUPL
OPTO COUPL

Type

1163
1163
1117
1117
659
659
659
659
720
720

C106A4
C106B2
C106B3
C106B4
C106C2
C106C3
C106C4
C106D2
C106D3
C106D4

720
720
720
720
720
720
720
720
720
720

C106F2
C106F3
C106F4

720
720
720
720
720
720
720
720
720

Type
TIL114
TIL115
TIL116
TIL117
TIL118
TIL119
TIL138

Mfg. Prod. Line

Til
Til
Til
Til
Til
Til
Til

Til
Til

IRLED
IRLED
IRLED

TIL81

Til

IRLED

Til

TIP110
TIP111
TIP115
TIP116
TIP120
TIP121
TIP125
TIP126
TIP29

TIP30
TIP30A
TIP30B
TIP31

TIP31A
TIP31B
TIP32
TIP32A

TIP41A
TIP41B

1416
1416
1415

TIP42
TIP42A
TIP42B

TIP32B
TIP33
TIP33A
TIP33B
TIP34
TIP34A
TIP34B
TIP41

C108F1
C108Y1

C122A1X88
C122B1X88
C122C1X88
C122D1X88
C122E1X88
C122F1X88
C122M1X88
C126A
C126B
C126C
C126D
C126E
C126F
C126M
SC146B
SC146D
SC149B
SC1490
SC151B
SC151D
C222F
C222A
C222B
C222C
C222D
C103Y
C103YY
CI 03 A
C103B
H11A4
H11A5
H11B2

858
858
858
858
858
858
858

TIP47
TIP48
TIS82

TIXL143
TIXL144
TIXL146
TIXL146

1135
1135
733
733
733
733
733
733
CF

TN53
TN59
TN61

TN63
TN79
TRS1204
TRS1205
TRS1404
TRS1405
TRS140HP

CF
CF
CF

TRS140MP

CF
CF

TRS1604
TRS1605
TRS160HP

CF
763
763
763
763
763

TRS1804
TRS1805
TRS180HP

TRS160MP

TRS180MP
TRS2004

763
763

TRS2005
TRS2006
TRS200HP
TRS200MP
TRS2254
TRS2255
TRS225HP
TRS225MP
TRS2504
TRS2505
TRS250HP
TRS250MP
TRS2754
TRS2755
TRS275HP
TRS275MP
TRS2804S
TRS2805S
TRS3006
TRS3014

1381
1381
1381
1381
1381
1381

862
862
862
862
862
716
716
716
716
1277
1279
1293

CF= CONTACT FACTORY

45

COUPL
COUPL
COUPL
COUPL
COUPL
COUPL
COUPL

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

TIP29A
TIP29B

1416

OPTO
OPTO
OPTO
OPTO
OPTO
OPTO
OPTO

TIL31
TIL33
TIL34

1416
1416
1416
1416
1416
1416
1416
1416
1416
1416

C203A
C203G
C203B
C203C
C203Y
C203D
C203YY
D42C8
D42C8
C108A1
C108B1
C108C1
C108D1

GE

Replacement

Page

D45C8
D45C6
D40N1
D40N3
C6A
C6B
C6C
C6D
C106A2
C 106 A3

C106Q2
C106Q3
C106Q4
C106Y2
C106Y3
C106Y4

Suggested

Til
Til

Til
Til

OPTO COUPL
OPTO COUPL
OPTO COUPL
OPTO COUPL
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

Type

Page

H11A3
H11A3
H11A3
H11A1
H11A6
H11B2
H13A1
LED55B
LED55B
LED56
L14G1
D44E2
D44E3
D45E2
D45E3
D44E2
D44E3
D45E2
D45E3

Page
1277
1277
1277
1275
1279
1293
1275
1359
1359
1359

D44C4

1337
1151
1151
1167
1167
1151
1151
1167
1167
1147

D44C7
D44C10
D45C4
D45C7
D45C10
D44C5
D44C8
D44C11
D45C5
D45C8

1147
1147
1163
1163
1163
1147
1147
1147
1163
1163

D45C1
D44H4
D44H7

D44H10
D45H4
D45H7
D45H10
D44H4
D44H7
D44H10

1163
1155
1155
1155
1171
1171
1171
1155
1155
1155

D45H4
D45H7
D45H10

1171
1171
1171

D44R1
D44R3
D40E5
H13A1

1159
1159
1109
1275
1309
1293
1293

H13A2
H13B1
H13B2
D40E5
D40E5
D40E5
D40E1
D40E1
D44R1
D44R1
D44R1
D44R1
D40N1

1109
1109
1109
1109
1109
1159
1159
1159
1159
1117

D44R1
D44R1
D44R1
D40N1
D44R1
D44R1
D44R1
D40N1
D44R1
D44R1

1159
1159
1159
1117
1159
1159
1159
1117
1159
1159

D44R1
D44R2
O40N1
D44R1
D44R1
D44R2
D40N1
D44R1
D44R1
D44R2

1159
1159
1117
1159
1159
1159
1117
1159
1159
1159

D40N1
D44R1
D44R3
D44R3
D40N1
D44R3
D44R3
044R3
D44R4
D44R3

1117
1159
1159
1159
1117
1159
1159
1159
1159
1159

Suggested

Suggested

GE

Type

Mfg. Prod. Line

PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

TRS3015
TRS301HP
TRS301LC

TRS301MP
TRS3204S
TRS3205S
TRS3254
TRS3255
TRS325MP
TRS3742
TRS4296
TRS4297
UP12217
UP12218
UP14046
UP14047
V1000LB160B
V1000LB160A
V1000LB80A

V100MA4A
V100MA4B

GE
GE
GE
GE

V120ZA1
V120ZA6
V130LA10A
V130LA1
V130LA20A

GF
GE
GE
GF
GF
GE
GF
GE
GF
GE

V130LA20B
V130LA2
V130PA10A
V130PA20A
V130PA2OB
V130PA20C
V150LA10A
V150LA1
V150LA20A
V150LA20B

GF
GE
GF
GF
GE
GF
GF
GE
GE
GE

V150LA2

GE
GE
GE
GE
GF
GE
GE
GE
GF
GE

V100ZA15
V100ZA3

V120MA1A
V120MA2B

V150MA1A
V150MA2B
V150PA10A
V15OPA20A
V150PA20B
V150PA20C
V150ZA1
V150ZA8

V180MA1A
V180MA3B

GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE
GE

MOV
MOV

GE-MOV
GE-MOV
GE
GE

MOV
MOV

GE-MOV
GE-MOV
GE-MOV

GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV

GEMOV
GEMOV
GE-MOV

GE-MOV

V22ZA1
V22ZA3
V24ZA1
V24ZA4
V250LA15A

GE
GE
GF
GE
GE
GF
GE
GE
GF
GE

V250LA20A
V250LA2
V250LA40A
V250LA40B
V250LA4
V250PA10A
V250PA20A
V250PA40A
V250PA40B
V250PA40C

GF
GE
GF
GE
GF
GE
GF
GE
GF
GE

V270MA2A
V270MA4B

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV

V180ZA10
V180ZA1

V220MA2A
V220MA4B

V275LA15A
V275LA20A
V275LA2
V275LA40A
V275LA40B
V275LA4
V275PA10A
V275PA20A
V275PA40A
V275PA40B
V275PA40C
V27ZA1
V27ZA4
V300LA2
V300LA4
V320LA15A
V320LA20A
V320LA40A

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE

MOV

GEMOV
GE-MOV
GE-MOV

GEMOV
GEMOV
GE

MOV

GEMOV
GE-MOV

GEMOV
GEMOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV

Type

Page

1159

D44R2
D44R2

1159
1159
1109
1109
1109
1109

D40E1
D40E1
D40E5
D40E5

Type

Page

D44R3
D44N3
D44R3
D44R3
D44R3
D44R3
D44R3
D44R4
D44R3
D44R4

GE

Replacement

Replacement

V320LA40B
V320PA40A
V320PA40B
V320PA40C

1159
1159
1159
1159
1159
1159
1159
1159

V330MA2A
V330MA5B
V33MA1A
V33MA1B
V33ZA1
V33ZA5

V390MA3A
V390MA6B
V39MA2A
V39MA2B
V39ZA1
V39ZA6
V409
V40LA2A
V40LA2B
V420LB20A

1418
1418
1418
1426

V420LB40A
V420LB40B
V42OPA20A
V420PA40A
V420PA40B
V420PA40C

1426
1438
1438
1426
1426
1438
1438
1418
1418
1418

V430MA3A
V430MA7B
V460LB20A
V460LB40A
V460LB40B
V460PA20A
V460PA40A
V460PA40B
V460PA40C

1418
1418
1432
1432
1432
1432
1418
1418
1418
1418

V47MA2A
V47MA2B
V47ZA1
V47ZA7
V480LB20A

V480LB40A
V480LB80A
V480LB80B
V480PA20A
V480PA40A
V480PA80A
V480PA80B
V480PA80C
V510LB20A
V510LB40A
V510LB80A
V510LB80B
V510PA20A
V510PA40A
V510PA80A
V510PA80B
V510PA80C
V550LB20A
V550LB4OA
V550LB80A
V550LB80B
V550PA20A
V550PA40A
V550PA80A
V550PA80B
V550PA80C

1418
1426
1426
1432
1432
1432
1432
1438
1438
1426
1426
1438
1438
1426
1426
1438
1438
1438
1438
1418

1418
1418
1418
1418
1418
1432
1432
1432
1432
1432

V56MA2A
V56MA2B
V56ZA2
V56ZA8
V575LB20A
V575LB40A
V575LB80A
V575LB80B
V575PA20A
V575PA40A
V575PA80A
V575PA80B
V575PA80C
V60LA3A
V60LA3B

1426
1426
1418
1418
1418
1418
1418
1418
1432
1432
1432
1432
1432
1438
1438
1418
1418
1418
1418
1418

V68MA3A
V68MA3B
V68ZA10
V68ZA2

V82MA3A
V82MA3B
V82ZA12
V82ZA2
V95LA7A

CF= CONTACT FACTORY

46

Mfg.

Prod. Line

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE MOV

MOV

GE

GE-MOV
GE-MOV

MOV
MOV
GE MOV
GE MOV

GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GF
GF
GF
GF
GF
GF
GF
GF
GF
GE
GF
GF
GF
GF
GF
GF
GF
GF
GF
GE
GF
GF
GF
GF
GF
GF
GF
GF
GF
GE
GF
GF
GF
GF
GF
GF
GF
GF
GF
GE

GF
GF
GF
GF
GF
GF
GF
GF
GF
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE

GE-MOV
GE-MOV
GE MOV

MOV
PWR TRAN

GE

GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE
GE

MOV
MOV

GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE
GE

MOV
MOV

GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE-MOV
GE MOV

GEMOV
GE-MOV
GE-MOV
GE
GE

MOV
MOV

GE-MOV

Page

Type

Page

D44C5

1147

1418
1432
1432
1432
1426
1426
1426
1426
1438
1438

1426
1426
1426
1426
1438
1438
1418
1418
1418
1418
1418
1432
1432
1432
1432
1426
1426
1418
1418
1418
1432
1432
1432
1432
1426
1426
1438
1438
1418
1418
1418
1418
1432
1432
1432
1432
1432
1418
1418

1418
1418
1432
1432
1432
1432
1432
1418
1418
1418
1418
1432
1432
1432
1432
1432
1426
1426
1438
1438
1418
1418
1418
1418
1432
1432
1432
1432
1432
1418
1418
1426
1426
1438
1438
1426
1426
1438
1438
1418

Suggested GE
Replacement
Type

Mfg. Prod. Line

V95LA7B
VX3375
VX3733

GE

W2AA50C
W2AA50E
W2BA25C
W2BA25E
W2BC25C
W2BC25E
W2BE25C
W2BE25E
W2BH25C
W2BH25E
W2BJ25C

GE-MOV
PWR TRAN
PWR TRAN

GE
GE
GE
GE
GE
GE
GE

PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR MODULE
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

W2BJ25E
W2BK25C
W2BK25E
W2CA25C
W2CA25E
W2DA25C
W2DA25E
W20C25C
W2DC25E
WV2AA50C
WV2AA50E
WV2BA25C
WV2BA25E
WV2BC25C
WV2BC25E
WV2BE25C
WV2BE25E
WV2BH25C
WV2BH25E
WV2BJ25C
WV2BJ25E
WV2BK25C
WV2BK25E
WV2CA25C
WV2CA25E
WV2DA25C
WV2DA25E
WV2DC25C
WV2DC25E
XB401
XB404
XB408
XB476
ZA SERIES
2T1479
ZT1480

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE

GE

ZT1481
ZT1482
ZT1483
ZT1484
ZT1485
ZT1486
ZT1613
ZT1700
ZT1701
ZT1711

GE-MOV
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN
PWR TRAN

ZT2102
ZT2270
ZT2876
ZT3375
ZT3440

PWR
PWR
PWR
PWR
PWR

TRAN
TRAN
TRAN
TRAN
TRAN

Page

Type

Page

1418

D42C5
D44C4

1135
1147

1444
14

1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444
1444

D40E5
D44C4
D44C4
D44C1

1109
1147
1147
1147

D40E5
D40E7

1109
1109

D40E5
D40E7
D44C5
D44C8
D44C5
D44C8
D40E5
D40E5
ID44C4
>D40E7

1109
1109
1147
1147
1147
1147
1109
1109
1147
1109

D40E1
D40E5
D42C7
D42C5
D44R4

1109
1109
1135
1135
1159

1438

CF= CONTACT FACTORY

47

SILICON SIGNAL TRANSISTORS

GENERAL PURPOSE AMPLIFIERS

TO-98

PACKAGE

BV CEO
Dev ice

Type

2N2711

Typical

18

NPN
NPN
NPN
NPN
NPN

18
18
18
25

30-90
75-225
30-90
75-225
90-180*

NPN
NPN
NPN
NPN
NPN

25
25
18
25
25

150-300'
235-470*
35-470*
400-800
250-500

2N3391A
2N3392
2N3393
2N3394
2N3395

NPN
NPN
NPN
NPN
NPN

25
25
25
25
25

250-500
150-300
90-180
55-110
150-500

2N3396
2N3397
2N3398
2N3402
2N3403

NPN
NPN
NPN
NPN
NPN

25
25
25
25
25

90-500
55-500
55-800
75-225
180-540

2N3404
2N3405
2N3414
2N3415
2N3416

NPN
NPN
NPN
NPN
NPN

50
50
25
25
50

2N3417
2N3662
2N3663
2N3843

50
12

2N3843A

NPN
NPN
NPN
NPN
NPN

30
30

2N3844
2N3844A
2N3845
2N3845A
2 N 3854

NPN
NPN
NPN
NPN
NPN

30
30
25
25
36

2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391

2N3854A
2N3855
2N3855A
2N3856
2N3856A

NPN
NPN
NPN
NPN
NPN

2N3858
2N3858A
2N3859
2N3859A
2N3860

NPN
NPN
NPN
NPN
NPN

2N3877
2N3877A
2N3900
2N3900A

NPN
NPN
NPN
NPN
NPN

2N3901

@Ic-V C e(V) (V)Max.

Min.-Max.

(V)

12

2mA,
2mA,
2mA,
2mA,
2mA,

10
10
10
5
5

1.6
1.6
1.6
1.6
I

1.6
1.6

1.6
3

1.6
1.6
1.6

50mA,
50mA,
50mA,
50mA,
50mA,

3mA
3mA
3mA
3mA
3mA

120
120
120
120
120

50mA,
50mA,
50mA,
50mA,
50mA,

3mA
3mA
3mA
3mA
3mA

120
120
120
120
120

50mA,
50mA,
50mA,
50mA,
50mA,

3mA
3mA
3mA
3mA
3mA

120
120
120
120
120
120
120
120
150
150

7
7

7
7
7

7
7
7
7
7

50mA,
50mA,
50mA,
50mA,
50mA,

3mA
3mA
3mA
3mA
3mA

150
150
150
150
150

20-40
20-40

2mA,
8mA,
8mA,
2mA.
2mA,

0.3
0.6
0.6
0.2
0.2

50mA,
10mA,
10mA,
10mA,
10mA,

3mA
1mA
1mA
1mA
1mA

150
1000
1000
150
150

35-70
35-70
60-120
60-120
35-70

2mA,
2mA,
2mA,
2mA.
2mA,

0.2
0.2
0.2
' 2
0.2

10mA,
10mA,
10mA,
10mA,
10mA,

1mA
1mA
1mA
1mA
1mA

150
150
150
150
200

0.2

10mA,
10mA,
10mA,
10mA,
10mA,

1mA
1mA
1mA
1mA
1mA

200
200
200
200
200

10mA,
10mA,
10mA,
10mA,
10mA,

1mA
1mA
1mA
1mA
1mA

150
150
150
150
150

2
2
2

120
120
120
120
120

2
2

180-540
20-

60-1 20

60

60-120
100-200
100-200
150-300

70

20-

85

20-

250-500
250-500
350-700

1.6

10
10
5

2mA,
2mA,
2mA,
2mA,
2mA.

- 2
3
J

2mA,
2mA,
2mA,
2mA,
2mA.
2mA,
2mA,
2mA,
2mA,
2mA,

0.2
0.2
0.2

125
125
125
125
125
5

0.125
0.125

1.6

5
5
5

1.6
1.6

101

10mA, 1.0mA
10mA, 1.0mA
50mA, 3mA
50mA, 3mA
50mA, 3mA

25 C
(mW)

360
360
360
360
360

0.3
0.3
0.3
0.3
0.3

1.6
1.6

10V,

Typical (Pf

2mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5

75-225
180-540
75-225
1 80-540
75-225

40

18
18
25

1.6

(MHz)

0.3
0.3

35-70
60-120
60-120
100-200
100-200

60
40

0.3
0.3

<>

MHz

50mA, 3mA
50mA, 3mA
50mA, 3mA
50mA, 3mA
50mA, 3mA

36
36
36
36
36

40

1.6

@>

2mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5

2mA,
2mA,
2mA,
2mA,
2mA,

1.6

2mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5

20:

C cb

'CE(SAT)

@10mA

7
7

7
5
5
5
5

5
5
5

360
360
360
360
360
360
360
360
360
360
360
360
360
560
560
560
560
360
360
360

2
2

360
200
200
360
360

360

5
.9

.9

360

360
360
360

2
1.7

1.7
1.7
1.7

1.7
1.7

2
2

7
7

360
360
360
360
360
360
360
360
360
360
360
360
360
360
360

SILICON SIGNAL TRANSISTORS

GENERAL PURPOSE AMPLIFIERS

TO-98

BV CEO
Device

(V)

NPN
NPN
NPN

2N5172

NPN
NPN
NPN
NPN
NPN
NPN

2N5174
2N5232
2N5232A
2N5249
2N5249A

V CE(SAT)

h FE

Typical

Min.-Max.

40
40
40

100-500
1 80-540
1 80-540

25

100-500

75
50
50
50
50

40-600
250-500
250-500
400-800
400-800
*

@>

c ,V CE

2mA, 5
2mA, 5
2mA, 5
10mA, 10

2K-20K
7K-70K
2K-20K
7K-70K

2N5309
2N5310

50
50
50

60-120
100-300
250-500

10>i A.

10/uA,

2N5311

NPN
NPN
NPN

2N5354
2N5355
2N5356
2N5365
2N5366

PNP
PNP
PNP
PNP
PNP

25
25
25
40
40

40-120
100-300
250-500
40-120
100-300

50mA,
50mA,
50mA,
50mA,
50mA,

2N5418
2N5419
2N5420
2N6076

NPN
NPN
NPN

25
25
25
25

40-120
100-300
250-500
100-500

D16G6

NPN

D29E1

PNP
PNP
PNP
PNP

12
25
25
40
40

60-200
150-500
60-120
100-200

8mA,
2mA,
2mA,
2mA,
2mA.

D29E2
D29E4
D29E5

D29E6
D29E9
D29E10
D33D21
D33D22

PNP
PNP
PNP

D33D24
D33D25
D33D26
D33D29
D33D30

NPN
NPN
NPN
NPN
NPN

NPN
NPN

0.125

c 'b

10mA,
50mA,
50mA,

1.0

mA

0.95
0.125
0.125
0.125
0.125

10mA,
10mA,
10mA,
10mA,
10mA,

1.4
1.4
1.4

0.125
0.125
0.125

1.0mA

1mA
1mA
1mA
1mA

200mA,
200mA,
200mA,
200mA,

0.2mA
0.2mA
0.2mA
0.2mA

10mA, 1mA
10mA, 1mA
10mA, 1mA

(MHz)

0.25

1.4

10mA, 5

<>

3mA
3mA
10mA, 1mA

0.3
0.3

2mA, 5
2mA, 5
2mA, 5
2mA, 5

25
25
40
40

10mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5

NPN
NPN
NPN
NPN

PNP

V)Max.

(V)

2N5305
2N5306
2N5307
2N5308

C cb

*T

@ 10mA

Type

2N4256
2N4424
2N4425

PACKAGE

Pt o

<s>10V

MHz

Typical (Pf

25 C
ImWI

<a

120
150
150

2
5

360
360
360

100

360

120
150
150
150
150

2
2

360
360
360
360
360

60
60
60
60

4
4
4
4

400
400
400
400

150
150
150

360
360
360

2
2

2
;

0.25
0.25

50mA,
50mA,
50mA,
50mA,
50mA,

2.5mA
2.5mA
2.5mA
2.5mA
2.5mA

200
200
200
350
350

0.25
0.25
0.25
0.25

50mA,
50mA,
50mA,
10mA,

2.5mA
2.5mA
2.5mA
1.0mA

250
250
250
300

2
2

10mA,
500mA,
500mA,
500mA,
500mA,

1.0mA

0.75
0.75
0.75
0.75

50mA
50mA
50mA
50mA

1000
150
165
120
135

9.4
9.4
9.4
9.4

200
500
500
500
500

50-300
60-120
100-200
60-200
150-500

2mA. 2
2mA, 2
2mA. 2
2mA. 2
2mA. 2

0.75
0.75
0.75
0.75
0.75

500mA,
500mA,
500mA,
500mA,
500mA,

50mA
50mA
50mA
50mA
50mA

150
120
135
150
165

9.4
9.4
9.4
9.4
9.4

500
500
500
625
625

60-120
100-200
150-300
60-120
100-200

2mA, 2
2mA, 1
2mA, 2
2mA, 2
2mA. 2

0.75
0.75
0.75
0.75
0.75

500mA,
500mA,
500mA,
500mA,
500mA,

50mA
50mA
50mA
50mA
50mA

120
135
150
120
135

9.4
9.4
9.4
9.4
9.4

625
625
625
625
625

20-

0.25
0.25
0.25

1
1
1
1

l8|iiilliliH
50mA, 1
50mA. 1
50mA, 1
10mA, 10
10
2
2

0.6

5
5
5

5
5

4
4
4
5
.9

360
360
360
360
360

400
400
400
360

1
j

I
1
I

40
60
60
25
25
40
40
40
60
60

102

SILICON SIGNAL TRANSISTORS

GENERAL PURPOSE AMPLIFIERS

TO-92

Device

BV,CEO

Type

2N3903
2N3904
2N3905
2N3906
2N4123

2N4124
2N4125
2N4126
2N4400
2N4401

2N4402
2N4403
2N4409
2N4410
2N5088

NPN
NPN
PNP
PNP

NPN
NPN
PNP
PNP

NPN
NPN
PNP
PNP

NPN
NPN
NPN

Min.

50
100
50
100
50

25
30
25
40
40

120
50
120
50
100

40
40
50
80
30

50

150

100
60

300
400
400
900

NPN
NPN
NPN

25
15

2N5221

PNP

2N5223

NPN

15
20

GES929
GES930

NPN
PNP
PNP

GES2221A NPft
GES2222 NPN

40
30

GES2222A
GES2483
GES2906
GES2907
GES5305

NPN

40
60
40
40
25

GES5306
GES5307
GES5308
GES5368
GES5369

NPN
NPN
NPN
NPN
NPN

25
40
40
30
30

GES5370

NPN
NPN
PNP
PNP

30
30
30
30
30

GES5371
GES5372
GES5373
GES5374

PNP
PNP

PNP

400
35
30
30
50

25
25
30
50
50
30

NPN
NPN

60
300

15

NPN
NPN
NPN

GES2221

Max.

40
40
40
40
30

2N5089
2N5219
2N5220

2N5225
2N5226
2N5227

''FE

@ 10mA(V)

PACKAGE

30

30
50

60
100
40
40
100
100
75
i 40
1 100

150
300
150

300

-Typical
l

c (mA)

V CE

1200
500
600
600
800

600
600
700

(V)

Max.

10

10
10
10

.3

.4
.4

150

360
150
360
150
300

C cb @10V

'CE(sat)

.3

.3

.4
.4

150
150

.4
.4

150
150

.4

.4

.2

10
10

.1

6'

.1

5
10

c (mA)

iiififii

10
10

100
100

.4

10

10
5

.125
.125
.3
.3
.3

.3

.125

10
10
150
150
150

150
10
150
150
200

120
300

150
150

10

.4

10

.4

2K

20K

1.4

7K
i 2K
| 7K

70K
20K
70K
200

1.4

5
5

1.4

150
150

10

.3

200
200
200
150

10

.3

150

150

10
10
10
10
10

.3

150
150
150
150
150

1|

60
100
200
60

40
100
200

300

600
600
200
300
400

150

%m
150
150

1.4

.3

.3
.3

.3

103

15
15

.8

,1

.1

150
150
10

.8

160

.1

10
10

300

15

10
10

10

150
tso
150

10

50

120
120
300

'

15

50

150
150

.7

5
10
10
10

5
15
15

10

.01

50
150
150

.6

.01

50
50

10
10

120

B (mA) (MHz)

50
50
50
50
50

50
50
2

300

1
1

15
15
15
15
1

15
15

.2
.2

.2

15
15
15
15

15
15
15

300
350
250
300
300
350
250
300
225
275
300
350
100
100
75
75
200
125
125
200
75
100
125
100
100
275
275
275

325
100
225
225
50

MHz

Typical (P F )
2.5

Continuous

ImAI

PT

25C
(mW)

200
200
200
200
200

350
350
350
350
350

200
200
200
600
600

350
350
350
350
350

600
600
250
250
50

350
350
625
625
350

50
100
500
500
100

350
350
350
350
350

200
500
50

350
350
350

2.0

100
100

3.5
3.5
3.5

400
400
400

360
360
360
360
360

3.5
2.0

400

2.5
2.5

2.5
2.5
2.5
2.5

2.5
3.5
3.5
5.0

5.0

5.0
5.0
2.0
2.0
2.0

5.0
7.0

2.0

6.0
7.0

4.0
2.0

3.0

100
350
350

3.5

300

360
360
360
360
400

50
50
50
200
200

3.5
3.5
3.5
3.5
3.5

300
300
300
500
500

400
400
400
360
360

200
200
200
200
200

3.5
3.5
4.0
4.0
4.0

500
500
500
500
500

360
360
360
360
360

3.0

SILICON SIGNAL TRANSISTORS

GENERAL PURPOSE AMPLIFIERS

PACKAGE

TO-92

BVCEO

Device

Type

GES5822
GES5823
GES5824
GES5825
GES5826

'CE(sat)

-Typical

@ 10mA
(V)

Min.

60

60

too
100

40

60

40
40

100
150

Max.

200
200

i
I

V CE

c (mA)

2-!

Imkm

ma
,

MHz

B <mA) (MHz) Typical (P F )

50
50

500
500
10
10
10

|i

.1251

!':!

200
300

.75
.76

2H

{ .*,!

@ c (mA)

Max.

(V)

C cb @10V

5%

1
1

150
150
100
100
100

6.0
8.0
2.0
2.0

100
10
150

2.0

20

Pt
Continuous

(mA)
750
750
100

25 C
ImWI

>

500
500

100
100

360
360
360

100
100
500
500
500

360
360
400
400
400

500
500
500
500
500

400
400
400
400
400

800
800
800
800
800

500
500
600
500
500

800
800
800
50
50

500
500
500
600
500

200
200
800
800

360
360
360
360

800
750
750
750
750

360
600
500
600
500

750
750
750
750
750

600
500
500
500

GES5827
GES5828
GES6000
GES6001
GES6002

40
40
25
25
25

GES6003
GES6004
GES6005
GES6006
GES6007

25
40
40
40
40

40Q

200
100
100
20d
*

40
40
40
40
60

too

GES6015
GES6016
GES6017
GES6218
GES6219

60
60
60
300
350

too
200
200
20

GES6220
GES6221
GES6222
GES6224
GES5375
GES5447
GES5448)
GES5449
GES5450

200
150
60
60
30
25
30

20
20

GES5451
GES5810]
GES5811
GES5812]
GES5813

20
25
25
25
25

GES58141
GES5815
GES5816
GES5817
GES5818

40
40
40
40
40

30

30

.5..!

500
500
300

390
500
600

I-

00 J
30
100
50

30

60
60

600
200

50
2

.160

.^jpOfis

160
rf-^MJ

4W?F feSQb
ri&H s*^w

50
50
50
50

".

.75

10

1.0-

10'

1.0

10
10
5
5
10
.

5-

.25
.25

.6

'

.8

V,

2
2

.75
.75

mm
iffjl

j"

>7S
.75

!,
.76:
.76

104

T
I

15
r

flip
5
60
50
50
50

500
500
600
500

600

i
j.'

500
500
500

>

,7$

imi

2
iflf

100
500

1.0

10
150
50
50
100
100

.3.

fw

10

.125
.125

5
-2

50
50

20
20

'

2.3

50

10
10

2.0

50

500
500
500

WHM
.75

JhJi
I

iKty

150
300
150

60
eo

500
500
500
500
500

.75

20
2
150
50
50
60
50

150

Mjgfe-i

1.6

10

200
300
400
300

200
500
500

150

10
10
10
10

!?*..

10
10

100
100
100
100
100

-5 :

10
10
-10
10
10

20

75
150
40

10
10
10

aSH

20
20

100
100
100

''A'--:

HIE
10

300
300
,

*,*-%

9
I

10
10
10

Blliills22
-

!.T25

10

10

300
500
500

100
200^
200
100

10

L4

10

500

125

10

'300

200
-

GES6010
GES6011
GES6012
GES6013
GES6014

800
too IT 300
too II 300
500
200

'

[500

250

50
60
50

i--'m-'
!

2.0
6.0

250
170

8,0

250
150
250
170
250

8.0
6.0
S.0

125
100
150
125
125

6.0

100
150
125
65
65

ao

65
65
100
100
200
150
150
100
100

60

60
8.0

ao
6.0

ao
6.0

6.0
8.0
4.0
4.0
4.0
4.0
2.0
2.0

4.0
6.0
5.0
6.0
6.0

100
125
125
150
150

6.0
6.0
8.0

125
125
150
150
150

6
ao
ao

6JO
8.0

8.0

ao

BOO

SILICON SIGNAL TRANSISTORS

GENERAL PURPOSE AMPLIFIERS

TO-92

BV,CEO

Device

Type

GES5819 PNP
GES5820
GES5821 PNP

NM

MPSA05
MPSA06
MPSA12
MPSA13
MPSA14

NPN
NPN
NPN
NPN
NPN

^E

@ 10mA
Mm.

(V)

40
60
60
60
80
20
30
30

PACKAGE

Max.

150
60
60
50
50
20.000

VCE(sat)
<>

c (mA)

VCE

Max.

(V)

300

.75

160

.'

"'2.

160

100
100
10
100
100

10,000
20,000

.75
.75
.25
.25

2
1
I

1.0

1.5

1.5

Ccb @10V
Typical

c (mA)
500
500
500

50
50
50

100

10
10

100
10
100
100

.01
I
.i
I

,T
|

MPSA20
MPSA55
MPSA56
MPSA65
MPSA66

NPN
PNP
PNP
PNP
PNP

40
60
80
30

40
50
50
50.000

30

75,000

PNP
PNP
PNP
PNP
NPN

25
25
25
30
30

30
100
60
30
100

400

10

100
100
10
10

5
5

50

.25
.25
.25
1.5

1
1

10
100
100

1
f

10
to

|
J

1-5

NPN

30
20
25
25
30

50
30

MPS6513
MPS6514
MPS651 5
MPS6516
MPS651 7

NPN
NPN
NPN
PNP

25
40

PNP

40

90

100
180

MPS6518
MPS651
MPS6530
MPS6531
MPS6532

PNP
PNP

40
25
40
40
30

1S0

300

250
25
SO
30

500

MPS6533
MPS6534
MPS6535
MPS6565
MPS6566

NPN
NPN
NPN
PNP
PNP
PNP

NPN
NPN

D39C1-6
D38H1-6

PNP

D39J1-6
D38L1-6
D38S1-10

PNP

NPN

NPN
NPN

hi

30
25

D38Y1-3
200/300
D38W5-11 NPN
80

90
150
250

180
300
500

50

40
40
30
45
45
25/40
60/80
60/80
25/40
30/60

100
50

600
500
500
100

25
30
40
100
2,000

60
6D
i

160
100

2,000

400

3,000

30
150

1.200

.25
.6

50
60
10

.8

10

.1

10

.1

50
50

2.5

;'

2
2

'

.5

50

10

.5

'2'.

'

.S

10

.5

10

.5

to

10

.5

600
500
100

10
to

&

500
500
100
10
400

10
10
v

10
10

'3H
1

20

10

100
100
10
10

1.5

.125
.26
1.75

too

.4

,1

1.0
.1

105

s
5

500
10
40
10

5
5

51
6
5

10
10
to

to
to
10
1

500
100
100

1
1

50
50
100
100
100

.3

50
50
50
50
50

.5

.5

:i

10
10

2
.10

.1

.3

S
s

'.

100
too

.25

10

''2

50
50
100

10

10

2.5
i

10
10

10

'

1.0
.25

10

'''?

70,000

500
500
70,000

as

50

150

100

8"

50
50

150
300

NPnI
NPN{
PNP
|

.25
.25

50

300

MPS3705
MPS3706
MPS5172
MPS6076
MPS6512

NPN

MHz

150
125
125
100
100
50
50
50

<P F )

8.0

6.0
8.0
7.0
7.0
4.0

4.0
4.0

Continuous

(mA)

@25C

750
750
750
500
500
500
500
500

500
600
500
625
625
625
625
625

'

MPS3638
MPS3638A
MPS3702
MPS3703
MPS3704

B (mA) (MHz) Typical

140
100
100
100
ioo
125
175
150
150
100
100
100
100
100
275

275
425
425
225
225

.5

90
100
80

10
.5
',S

4
1

90
200
100
250

100

500
500
300
300

350
625
625
625
625

5.0

ao.

500
500
200
200
800

350
350
360
360
360

6.0
6.0

800
800

360
360
360
360

5.0
5.0
5.0

5.0

5.0

2.0

100
100
100

2.0
2.0
2.0
2.5
2.5

100
100
100
100
100

350
350
360
350
350

2.5
2.5
3.5
3.5
3.5

100
100

350
360
350

j
|

I
l

350 I
350 1
250 I
250 1
250 |
350 j
350 I
350 1
225
225

10

*2M'\
11.0
11.0
6.0
6.0

600
600
600

5.0

5.0
5.0
2'-"
l

2.0
5.0

7.0

10.0
5.0

20
5.0
2.0

350

350
350

600
600
600
200
200

350
350
350
350
350

500
500
500
500
100

500
500
500
500
400

100
100

500
400

';

SILICON SIGNAL TRANSISTORS

COMPLEMENTARY PAIRS
TO-98 PACKAGE

DEVICE

NPN

VcE(SAT)

BV CEO
PNP

(V)

Min.-Max.

c.

VCE

(V)

(v)

Max.

\r,

25

40-120

50mA,

0.25^

28:

100-300

50mA,

0.3%

2N5418

25:

40-120

50mA,

2N5419

"2s1

100-300

50mA,

2N5354
2N5355

2N6076
D29E1

D29E2
D29E4
D29E5
D29E6
D29E9
D29E10

25

00-500

60-200

25

25

50-500

0.2S J
;03';

10mA, 10

2mA, 2
2mA, 2

60-1 20

2mA, 2

00-200

,"0V?8";

Q.7S

100-200

40

D33D21

26'

60-200

2mA, 2
2mA, 2

D33D22
D33D24
D33D25
D33D26

36'

150-500

2mA, 2

20

2mA, 2

D33D29
D33D30

60-1

40

0,78

40

100-200

40

2mA,

"i0.7B

"

50mA, 2,5mA
5wiA, 2,5mA

W*wA

6;1BJ

0.7S
'

0,78

0.75

50-300

2mA, 2

60

60-1 20

2mA, 2

100-200

2mA,

I.

'

'

0,7$
['
,

0.78

Q 7g

'

106

2N5355

QmAl
I

50 mA

2N5172

D33D21
D33D22

500mA, 50mA

D33D24
D33D25
D33D26
D33D29
D33D30

SOOmA ,80mA
500mA, 50mA
SOOmA ,50mA
500mA SOroA
500mA 50mA
SOOmA ,50mA
500mA 50nA

D29E2
D29E4
D29E5
D29E6
D29E9
D29E10

fflmA"
50 mA

50 mA

ENCAPSULATED TO-92

ENCAPSULATED TO-98

2N5419
2N5354

50 mA

600mA;
500mA,
500mA,
500mA,
500mA,

$.7S'

-'

2N5418

50mA, 2.5mA
50mA, ?.5mA

0.78 "j 1

50-300

40

"Q.TOj |.""qbowAJ 50mA

2mA, 2
2mA, 2
2mA, 2

60-120

40

'

COMPLEMENT
I

D29E1

SILICON SIGNAL TRANSISTORS

COMPLEMENTARY PAIRS
TO-92 PACKAGE
DEVICE

NPN

BVCEO
PNP

2N3903
2N3904
2N3905
2N3906
2N4400
2N4401
2N4402
2N4403

2N4123
2N4124
2N4125
2N41 26

GES5368
GES5369
GES537Q
GES5371

(V)

40
40
40
40'
40
40
40
40
30
25
30
25
30
30
'

30
30

GES5372
GES5373
GES5374
GES5375
GES5447
GES5448
GES5449
GES5450
GES5451
GES5810
GES5811

GES5812

GES5813
GES5814
GES5815

GES5816
GES5817

GES5818

30
30

30
30
25

30
30
30
20
25
25
25
25
40
40
40
40
40

GES5819

40
69

GES5821

GES5823

60
60
60
25

GES6001

25

GES5820

GES5822
GES6000

GES6002

25

GES6003
GES6004

_2_

40

GES6005

GES6006
GES6007

GES6010
GES6011

GES6012

GES6013
GES6014
GES6015

GES6016
GES6017
GES2221
GES2222

GES2906
GES2907

40
40
40
40

40
40
40
60
60
60
60
30
30
40

40

h FE

MIN.-MAX.
50-150
100-300
50-150
1 00-300
50-150
1 00-300
50-150
100-300
50-1 50
1 20-360
50-150
1 20-360
60-200
100-300
200-600
60-600
40-200
1 00-300
200-400
40-400
60-300
30-150
1 00-300
50-1 50
30-600
60-200
60-200
150-500
150-500
60-160
60-160
1 00-200
100-200
150-300
1 50-300
60-160
60-160
100-200
100-200
100-300
100-300
200-500
200-500
100-300
100-300
200-500
200-500
100-300
100-300
200-500
200-500
1 00-300
1 00-300
200-500
200-500
40-120
100-300
40-120
100-300

V rF

(V)

10mA, 1
10mA, 1
10 mA, 1
10mA, 1
150mA, 1
150mA, 1
150 mA, 2
150mA, 2
2mA, 1
2mA, 1
2mA. 1
2mA, 1
1 50mA, 10
150mA, 10
150mA. 10
150mA, 10
150mA, 10
150mA, 10
150mA, 10
150mA, 10
50mA.
SOmA, 5
50mA, 2
50mA.
50mA.
2mA, 2
2mA, 2
2mA, 2
2mA, 2
2mA, 2
2mA, 2
2mA, 2
2mA, 2
2mA.
2mA, 2
2mA, 2
2mA,
2mA, 2
2mA, 2
1 0mA,
1
10mA, 1
10mA, 1
10mA, 1
'OmA,
'OmA,
1 0mA,
1
10mA. 1
10mA. 1
1 0mA.
1
10mA. 1
10mA, 1
10mA. 1
10mA, 1
10mA. 1
10mA, 1
1
1

150,
150,
150.
150.

10
10
10
10

(V)

V CE(SAT)
MAX. @
|_

5mA
5mA
50mA, 5mA
50mA, 5mA
50 mA,

150mA,
150mA, 15mA
150mA, 15mA\
150 mA" 15mA

0.4
0.4
0.3
0.3
0.4
0.4
0.3

fflmA_ _5mA

50mA,
50mA,
50mA,
150mA,
ISOmA,
150mA,
1 50mA,

0.3_"

0.3
0.3
0.3
0.3
0.3
0.3
0.25

0.8
1.0

"0.75"

0.75
0;75^
b.7_5~

0.75
.

_075
0.4
0.2
0.4

02
04
6.2

0.4
0.5

0.75
0.5
0,78

as
0.7S
0.8
_0.75_
0.3
0.3
0.4
0.4

5 mA
5mA
5mA

15mA
15mA
ISmA
1

5mA

150mA, 15mA
IbOmA, 16mA
160mA, 15mA
160mA. ISmA

0.25
0.6

_075j

50mA,

0.3
0.3
0.4
0.4
0.4
0.4

0.75
0.75
0.75
0.75
0.75
0.76
0.75

COMPLEMENT
]

50mA, 5mA
60mA, 5mA
100mA, 5mA
100mA, 5mA
100mA, 5mA
500mA, SOmA
500mA, SOmA
500mA, SOmA
500mA. 50mA
500mA, 50m A
500mA, 50mA
500 mA, 50mA
500mA; 50 mA

500mA; ~50mA
500mA, SOmA
500mA, SOmA
500mA, 50 mA
500mA, ~50iinA
50 0mA

50mA

100mA, 30mA
100mA, 10mA
100mA, 10mA
100mA, 10mA
100mA. 10mA
100mA, 1 0mA
100mA, 10mA
100mA, 10mA
500mA. 50mA
500mA, 50mA
500mA, SOmA
500mA, 50 mA
500mA, 50mA
500mA. SOmA
500mA, 50mA
500mA, SOmA
150mA, ISmA
180mA, 15mA
150mA, 15mA
150mA, TSmA

"

2N3905
2N3906
2N3903
2N3904
2N4402
2N4403
2N4400
2N4401

2N4125
2N4126
2N4123
2N4124
GES5372
GES5373
GES5374
GES5375
GES5368
GES5369
GES5370
GES5371
GES5449
GES5450
GES5447
GES5448
GES5447
GES5811
GES5810
GES5813
GES5812
GES5815
GES5814
GES5817
GES5816
GES5819
GES5818
GES5821
GES5820
GES5823
GES5822
GES6001
GES6000
GES6003
GES6002
GES6005
GES6004
GES6007
GES6006
GES6011
GES6010
GES6013
GES6012
GES6015
GES6014
GES6017
GES6016
GES2906
GES2907
GES2221
GES2222
(Continued)

107

2
3

SILICON SIGNAL TRANSISTORS

COMPLEMENTARY PAIRS
TO-92 PACKAGE

DEVICE

NPN
MPS A05
MPSA06

BV CEO
PIMP

MPSA55
MPS A56
MPS3702
MPS3703

(V)

eo
"80

50-

60
80
25
30

50-

30
30
20
30
30
25

MPS3704
MPS3705
MPS3706
MPS651
MPS651

MPS6514

25"

MPS651 5

MPS6516
MPS651

MPS6518
MPS6519
MPS6530
MPS6531
MPS6532

MPS6533
MPS6534
MPS6535
MPS5172

MPS6076
D38H1-3

D39J4-6

D38L1-3

D39C1-3

40
~40~

25
40
40

D39C4-6

50-

60-300
30-150

100-300
50-150
30-600
50-100
90-180
1 50-300
250-500
50-1

00

90-180
1 50-300
250-500
40-1 20
90-270

30~

30-

40

40-1 20

40

90-270

30

30-

25
25
60
80
80
40
40"

25

D38L4-6

50-

40

D39J1-3

D38H4-6

MIN.-MAX.

25

100-500
00-500
60-500
60-500
60-500
60-500

2K-70K
2K-70K
2K-70K
2K-70K

c V CE
100mA,
100mA,
100mA,
,

100mA,
50mA,
50mA,

50mA

(V)
1
1

V CE(SAT)
MAX.
If

0.25
0.25"
"0.25"
0.25
0.25"

5
5

MPSA55
MPSA56

10dmA,'"i0mA^"
100mA.' 10mA

MPS A05
MPS A06
MPS3704
MPS3705
MPS3702
MPS3703
MPS3702
MPS6516
MPS6517
MPS6518
MPS6519
MPS6512

0.6
0.8

_50mX _5mA
50mA, 5mA
100mA, 5mA
100mA. 5mA

1.0

100mA,.

'

"

J6.5_
O.S
"0.5

."

0.5
0.5
0.5"

0.5
6.5
0.3
0.5
0.5
0.3"
0.5

Q.25
0.25"'

0.125
0.260_
0.125
0.260
lb;
1

15

j.5__
1.75

5mA

50mA, 5mA
_50mAj_ 5mA

0.5

'

COMPLEMENT
B

100mA, 10rnA_
100mA, 10mA"

6.25'

2_

50mA, 2
50mA, 2
2mA, 10
2mA. 10
2mA, 10
2mA, 10
2mA, 10
2mA, 10
2mA, 10
2mA, 10
100mA, 1
100mA, 1
100mA, 1
100mA, 1
100mA, 1
100mA, 1
10mA, 10
10mA, 10
10mA, 1
10mA, 1
10mA, 1
10mA. 1
2mA,
2mA,
2mA, 5
2mA,

108

(V)

SOmAt. _5mA_.
50mA,_ 5mA
"50mA, 5mA

5mA
5mA
_50mA;_ "5mA
50mA,
50mA.

iOOm'A, IjOmA^'

100mA7 10mA
lObrnA^ 10mA
"lOO mA, T0mA~
i'dbmA,

10mA

100mA, 10m A_
10mA, JmA_
10 mA

1mA

100mA,
100mA,
100mA,
IQOmA,

10mA
10mA
10mA
10mA

,5mA
500mA] .5mA
500mA, .5mA
500mA, .5mA

_500mA

MPS651
MPS6514
MPS6515
MPS6533
MPS6534
MPS6535
MPS6530
MPS6531
MPS6532
MPS6076
MPS51 72
D39J1-3

D38H1-3
D39J4-6

D38H4-6
D39C1-3
D38L1-3
D39C4-6
D38L4-6

SILICON SIGNAL
LOW NOISE AMPLIFIERS
TO-98 PACKAGE

Device

Type

I2N3391A
2N3844
2N3844A
2N3845
2N3845A

2N3900A
2N3901

2N5232A
2N5249A
2N5306A
2N5308A
2N5309
2N5310
2N5311

NPN
NPN
NPN
NPN
NPN

NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN

BV CEO

NF

hFE

(V)

Min. -Max.

25
30
30
30
30

250-500

@| C/ vCE
2mA,
2mA,
2mA,
2mA,
2mA,

35-70

35-70

60-120
60-120

18
18
50
50
25

40
50
50
50

(V)

250-500
350 700
250-500
400-800
7K-70K

7K-70K
60-120
1 00 300
250-500

5.0

5
5

10.2

5V,

10.2
8.5

2mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5

5.0

5.0

5.0

2mA, 5

5;0

10/jA, 5

4.0

5
10mA, 5

3.0

3.0

C~

10V, c
10V, c

Vce

"CE

5V, c
5V. c
5V, c
I

VCF
VCE
V CE
V CE
V CE

1mA, R s
1mA, R s
1mA, R s =
1mA, R.. -

10V, r
l

--

5.0

3.0

10mA, R s

10 V,

Vce

8.5

10(iA.

Conditions

(db)

Rs
H
10/jA, R s 100mA. R s =

5K,

BW =
BW *
BW

15.7KHZ, f 10Hz
lOOKHz, f = 2MHz
20,
100KHZ. f-2MHz
20, BW' lOOKHz, f = 2MHz
20, BW
100KHZ, f = 2MHz
20,

--

IOOjuA,

5K,

BW=15.7KHz,f- 10Hz

10iiA.

5K,

BW-

15.7KHZ.
5K. BW - 1 5.7KHZ.
5V, c =
5K, BW- 15.7KHZ,
5V, lc= 600uA. R,,- 160K, BW 15.7KHZ.

"

5V, c
5V,I C
l

--

600/iA,

20/jA,

20/M. R s =
20mA, R s

5V,

"CE

Rs
Rs

5 V,

5K.

BW
BW =
BW =

5K,

BW-

160K,
5K.

to

15.7KH2

to 15.7KHz
10Hz lo 15.7KHz
f = 10Hz to 1 5.7KHz,
f = 10Hz to 15.7KHzl
f = 10Hz to lOKHz
=

15.7KH/. f
15.7KHz,f =
75.7KHz, f=
15.7KHZ, f =
--

10Hz

to

10KHz

1KHz
1KHz
1KHz

SILICON SIGNAL
LOW NOISE AMPLIFIERS
TO-92 PACKAGE
Device

GES5827A
GES5828A
GES6000
GES6001

GES6004
GES6005
GES6010
GES6011
GES6014

GES6015
GES929
GES930
GES5306A
GES5308A

Type

NPN
NPN
NPN
PNP

NPN

BV CEO
Min. -Max.

40
40
25
25

250-500
400-800
100-300
1 00-300

40

PNP

40

NPN

40

PNP

40

NPN

60

PNP

NPN
NPN
NPN
NPN

D38S1-4

GES6012
GES6013

40
40

GES6016
GES6017

NPN
PNP

NPN
PNP

60
60

00-300
1 00-300
100-300
1 00-300
100-300

100-300
60-120
100-300

7K-70K
7K-70K

10

30
45
60
80
100

60
50
50
25

NPN
D38S7
NPN
D38S8-10
NPN
D38W8-10 NPN
D38W13-14 NPN

NF

>>FE

(V)

4O0-3K
400-2K
250-1. 2K

150-1.2K
150-800

'c-Vce(V)

(db)

2mA, 5
2mA, 5
10mA, 1
10mA, 1

5
3

5V
5V
5V
5V

5V,

Ie - 100/iA.

Rs

5 V. 'e ' 100/iA,

Vce = 5V, 'e = 100/iA.
v C e ~ 5V, Ie IOOiuA,
Vce = 5V, Ie = 100/iA.

Rs

Vce
vC e
V CE
Vce

vC e
Vce

10mA,
10mA,
10mA.

3
3

10mA,'

3
5

10mA,

IO/jA, 5
10 mA, 5
2mA, 5

vC e

4
3
5

Vce
Vce
vC e
V CE

2mA,

100/M,

100 mA,
100 mA,
100 u A.
100 <iA,

5
5
5

Typ1.3
Typ1.3
Typ1.3

200-500
200-500

10mA,
10mA,

200-500
200-500

10mA,
10mA,

5
1

1
1

2
2

Conditions

VCE
VC E

=
=
-

--

=
=
-

5V,
5V,
5V,
5V,
5V,

lc = 100/iA,
'c = 10QuA,
-

it

100/iA. Rs

'c

Rs
10mA, Rs
10/iA.

lc"=
=-

5K.BW-I5.7KHz

5K,
5K,

=
=

Rs
Rs
Rs

ic

5K, BW-" 15.7KH7

Rq

100/iA, Rs
100/jA, Rs

If

Rg

600/iA, Rg
600/iA, Rg

BW
BW

= 15.7KHz
=

15.7KHz

5K, BW=- 15.7KHZ

5K, BW = 15.7KHZ
5K, BW= 15.7KHZ

5K,BW15.7KHz

5K,

=
-

BW-

15.7KHZ

5K. BW=15.7KHz
10K. BW= 15.7KHZ,
10K. BW--- 15.7KHZ,

160K, BW= 15.7KHZ,

160K, BW-15.7KHZ.

f =
f

f f =

10Hzto
10Hz to
10Hz to
10Hz to

10KK?
lOKHz
10KHz
10KHz

5V,
100/iA, Rg - 100K.F
=
1KHz
=
5V, C" 100/jA, Rg = 100K. F
=
iKHz
V C E^ 5V, c- 1 00/jA, Rg - 100K, F 1KHz
V C E = 5V, C" 100/iA, Rg - 10K. BW= 15.7KHz, f10Hz to 10KHz
Vce 5V, C" 1 00/iA, Rg - 10K, BW=15.7KHz, f- 10Hz to lOKHz
='
=

3
2

vC e =
Vce-

3
2

Vce-

5V,

E-

5 V,

Vce- 5V,
5V, E "
I

100/iA. Rs =
100/jA, Rs =

5K,
5K,

BWBW=

100/iA, Rs =
00/uA, Rs =

5K,
5K,

BW- 15.7KHZ
BW = 15.7KHZ

15.7KHZ
15.7KHz

109

SILICON SIGNAL TRANSISTORS

SWITCHES
TO-92

PACKAGE

(itiAl

B ImA)

b2 (T

off

VC E

>V)

Type

BVCEO

'ON

NPN
NPN

40
40
40
40

70
70
70
70

225
250
260
300

10

10

10
10

NPN
NPN

40

PNP
PNP

40
40

35
35
35
35

255
255
255
255

150
150
150
150

15
15
15
15

15
15
15
15

30
30
30
30

NPN
NPN
NPN
NPN

30

40
40
40
40

350
350
400
400

150
150
150
150

15
15
15
15

15
15
15

30
30
30
30

GES5372
GES5373
GES5374
GES5375

PNP
PNP
PNP
PNP

30

150
150
175
175

150
150
150
150

15
15

15

30
30

50
50
50
50

GES6000
GES6002
GES6004
GES6006

NPN
NPN
NPN
NPN

25
25
40
40

20

205
250
180
240

150
150
150
150

15
15
15
15

15

20
20
20

GES6001
GES6003
GES6005

25
25
40
40

20
20
20
20

155
200
155
200

150
150
150
150

15

15
15

15
15
15

GES6007

PNP
PNP
PNP
PNP

15

15

GES6010
GES6012
GES6014
GES6016

NPN
NPN
NPN
NPN

40
40
60
60

40
40
40

400

150
150
150
150

15
15
15
15

15
15

GES6011
GES6013
GES6015
GES6017

PNP
PNP
PNP
PNP

150
150
150
150

15
15
15
15

15

40
60
60

15
15

GES2221A
GES2222A
GES2906

NPN
NPN

15
15
15
15

15

15
15

S
1

15

30
30

30
30

Device

2N3903
2N3904
2N3905
2N3906

2N4400
2N4401
2N4402
2N4403

GES5368
GES5369
GES5370
GES5371

1
I
|
j

j
J

PNP
PNP

40

OFF

ImA)

3
3

V EB(OFF)
(Tqn> <V>
0.5
0.5
0.5
0.6
2.0
2.0
2.0

2.0

30
30
30

30

40

40
40
40

40

500
400
500

40
40
40
40

425
525
425

35
35

285
285
110
110

150
150
150
150

170
170

300
300

GES2907

PNP
PNP

40

50
50

MPS3638
MPS3638A

PNP
PNP

25
25

75
75

525

110

15
15

15

30
30
30
30

15
15
15

30
30
30
30

15
15
15

30
30
30
30

30
30
30
30

15
15

15
i

30
30
30
30

1
j

30
30
30
30

twBlflllB

10
10

3.1

lH|(ljl|iHB

J^H^^^B

Xllllilillilillfl

3.1

SILICON SIGNAL

DARLINGTON TRANSISTORS
PACKAGE

TO-92
Device

BV CEO

Type

GES5305
GES5306
GES5306A
GES5307
GES5308
GES5308A
D38L1-3
D39C1-3
D39C4-6

^E

NPN
NPN
NPN
NPN
NPN
NPN
NPN
PNP
PNP

(V)

Min Max

25
25
25
40
40
40
40
40
25

2K-20K
7K-70K
7K-70K
2K-20K
7K-70K
7K-70K
2K-70K
2K-70K
2K-70K

TO-98
Device

Type

NPN
NPN
NPN
NPN
NPN
NPN
NPN

2IM5306

2N5306A
2N5307
2N5308
2N5308A
D16P1

@ 'o V CE

'CE(SAT)
(V)

2mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5
"2mA, S
2mA, 5

(V)
1

Max.

1.4

1.4
1.4
1.4
1.4
1.4
1.5

1.75
1.75

"FE
Min.-Max.

25

@ C V CE
I

2K-20K
7K-70K
7K-70K
2K-20K
7K-70K
7K-70K
2K-70K

25
25
40
40
40
12

c. S
I

200mA,
200mA,
200mA,
200mA,
200mA,
200mA,
500mA,
500mA,
500mA,

200mA
200mA
200mA
200mA
200mA
200mA
500juA

500mA
500juA

PACKAGE

BV CEO
(V)

2N5305

(V)

(V) Max.

2mA. 5
2mA, 5
2mA, 5
2mA, 5
2mA, 5
2mA, 6
2mA, 5

V CE(SAT)
@
lc.

1.4

200mA,
200mA,
200mA,
200 mA,
200mA,
200mA,
200mA,

1.4

1.4
1.4
1.4

1.4
1.4

If

200mA
200mA
200 mA

200mA
200mA
200mA
200mA

SILICON SIGNAL

HIGH VOLTAGE TYPES

TO-92
Device

BVCEO

NPN

(V)

GES6218
GES6219
GES6220
GES6221

300
250
200

Device

BVCEO

NPN

(V)

150

n FE

Min.-Max.

@ c V
l

20
20
20
20

20mA,
20mA,
20mA,
20mA,

10

10mA, 1mA
10mA, 1mA
20mA, 2mA
20mA, 2mA

10

10
10

TO-98

2N3877

2N3877A
2N5174
2N5175
2N5176

70
85
i

75

100
100

PACKAGE

PACKAGE

"FE
Min.-Max.

20
20
40-600
55-160
140-300

@ c ,V CE
l

CBO
(V)

2mA, 5
2mA, 5
10mA, 5
10mA, 5
10mA, 5

Max.

@ VCE

100nA*
lOOnA*

500nA
500nA
500nA

111

(V)

40
I

40

60
60
60

(V)

Max.

.125
.125
.950
.950
.950

V CE(SAT)
"c'b
10mA,
10mA,
10mA,
10mA,
10mA,

1mA
1mA
1mA
1mA
1mA

power
device technology and

From the leader

in

innovator in plastic

packaging

tilf attachment
superior power and
temperature cycling
capability
i

Good

I Fast

current gain

switching speeds

coded for polarity

(NPN or PNP) and lead

Color

configuration

General Electric's technology,

experience and quality
products can serve your
industrial application needs.

Our Power

Transistor Selector

Guide and factory personnel

are available for your inquiries.

Contact your local GE distributor or write to General

Electric Co., Electronics Park,

Bldg.

7,

Box

49, Syracuse,

NY 13201.

GENERAL

ELECTRIC

SILICON POWER DARLINGTON TRANSISTORS

NPN - HIGH GAIN

GE Type

TC = 25C
Max.
(W)

v CEO
Min.
<v>

Cont.

(A)

~nz
Min.

5V,

D40C1

6.25]

30

D40C2

6.23

30

40,000

30

.6

90.000

D40C3

6.26

200mA

0,000

60,000

6.3]

40

D40C5

6.25

40

40,000

D40C7

6.26

50

D40C8

6.25

50

10 000

ill

0,000

75
75

Very High Gain: 60k typical.

High input impedance; 50k ohm
typ.

75

D40C4

COMMENTS

Typical

imh z

nr.
Max.

75

60,000

75

.2

watts Pr

<>

25C

ambient.
Applications:

audio output,
touch switch, oscillator, buffer,

high

power

transistor driver,

relay replacement.

60,000

75

40,000

75

SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY - 2 AMPERES

SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY - 10 AMPERES
Pt

GE Type
NPN
PNP

25C
Max.
(W)

D44E1

50

D45E1

60

CEO
Min.

Cont.

(V)

(A)

40

10

-40

10

COMMENTS
Min.

1000

TYPICAL APPLICATIONS

1000
'

D44E2

D44E3

60

60

SO

-60

SO

80

60

-80

000

TO

WOO

10

1000

Relay and Solenoid Driver

* Regulator
Inverter Power Supply Switch
Audio Output
Relay Substitute
'Oscillator
Servo-Amolifier

000

113

X T Z
P

Max.

RED
Power Pac

SILICON POWER TRANSISTORS

NPN HIGH VOLTAGE

GE

Pt
= 25C

TC

..

Max.

rype

n
(v)

Max

Min.

Max.

Typical

(MH2)

BROWN
Power Tab

180

80

300
joo

30

90

80

,1

6.25

300

60

180

80

.1

6.25

375
375

.1

20

6.25

12C
120

.5

40 1

20-

6.25

18C
180

.5

40

20 2

6.25

22!
225

.5

6.25

D40P1

ft

500mA

60

250

10V,

.1

6.25

D40N5

"FE

80

D40N2

(J

90

D40N1

D40N4

nt
)'-

30

250

{.C

6.25

D40N3

h FE
1QV, 20mA

V Cp O

BROWN
Power Tab

BROWN
Power Tab

BROWN
Power Tab

BROWN
Power Tab

80

BROWN
Power Tab

BROWN

D40P3

Power Tab

BROWN

D40P5

15

25!
250

D42R2

15

30!
.100

D42R3

15

250

1.0

D42R4

IS

300

D42R1
.

TYPICAL APPLICATIONS
120V AC Line Operated

202
55

30

1.0

Amplifiers
Regulators

55

30

20 4

31.25

125

4.0

D44Q3

31.26

175

4.0

30 3

20"

D44Q5

31.25

225

4.0

303

204

D44R1

31.25

250

1.0

30

D44R2

31.25

250

1.0

75

D44R3

31.25

300

1.0

D44R4

31.25

300

1.0

75

D44R5

31.25

250

1.0

30

D44R6

31.25

300

1.0

30

D44R7

31.25

250

1.0

150

D44R8

31.25

300

1.0

150

Measured
Measured
3 Measured
4 Measured

at

80mA
2mA
200mA

at

at

at

50

50
50

RED
Power Tab

RED
Power Tab

RED

FEATURES
Glass Passivated Mesa
Constiuction
Fast Switching

High Voltage

40
40

90

40

Power Pac

RED
P ower Pac

RED
Power Pac

Power Pac
Power Pac

Power Pac

RED
Power Pac

175

RED
40

Power Pac

RED
40

Power Pac

RED
40

300

Power Pac

RED
40

300

114

193

198
198
198

198 A
193 A

198A

RED

RED
30

198

198A

RED
175

198

RED

RED
90

198

Power Tab
Power Tab

"

D44Q1

Inverters/Converters

55

30

1.0

Video and Chroma

Output

55

30

TV

Power Tab

198

Power Pac

229
229

229
229

229
229
229
229
229

229
229

SILICON POWER TRANSISTORS

COMPLEMENTARY - 1 AMPERE
h FE

>C

@ 2V 1A

Min.

Max.

Min.

1.0

50

150

10

-1.0

50

Cont.

(V)

(A)

D40D2

6.25

30

D41D2

6.25

-30

D40D3

6.25

30

D40D4

6.25

45

D41D4

6.25

-45

h FE

100mA

Min.

<>

2V,

10

120

360

20

1.0

120

360

20

.0

290

1.0

50

150

10

50

150

10

COMMENTS

10

TYPICAL APPLICATIONS
-1.0

Amplifier Output and Driver

Stages

Regulators

D40D5

D41D5

D40D7
D41D7

6.25

45

1.0

120

360

10

6.25

-45

1.0

120

360

10

6.25

60

1.0

50

D41D8
D40D10
D41D10

shunt and

Inverters/Converters

FEATURES
'0

6.25

-60

1.0

50

6.25

60

1.0

120

360

10

6.25

-60

-1.0

120

360

10

6.25

75

1.0

50

150

10

6.25

-75

1.0

50

10

1.0

120

10

1.0

120

10

High Free Air Dissipation (1.25

Watts @ 25C)

10

D40D8

series,

switching

Low Collector Saturation

Voltage (0.5V Typ. @ 1 .0A)

Excellent Linearity
Fast Switching
TO-5 Compatible

D40D11

Typical

ft,

150

MHz

SILICON POWER TRANSISTORS

COMPLEMENTARY - 2 AMPERES
GE Type
NPN
PNP
D40E1

T C =25C V C EO
Min.

Cont.

(W)

(VI

(A)

30

D41E1

D40E5
D41E5
D40E7

D41E7

'c

Max

FE
2V,

Min
50

100Ma
Max.

2V,

Min.

10

-30

50

10

60

50

10

-60

50

80

50

-80

50

115

10

10
10

1A

Package

Outline

Type

No.

Max.

BROWN
Power Tab

BLACK
Power Tab

BROWN
Power Tab

BLACK
Power Tab

BROWN
Power Tab

BLACK
Power Tab

198

198
198

198
198

198

SILICON

POWER TRANSISTORS

COMPLEMENTARY -

AMPERES

SILICON POWER TRANSISTORS

COMPLEMENTARY - 4 AMPERES

GE Type
NPN
PNP

T c = 25C
Max.
(W)

D44C1

30.0

h FE
IV, 200mA

'c

Min.

Cont.

(V)

(A)

30

Min.

IV, 1A

Max.

Outline

Type

No.

Min.

RED

25

4.0

Package

Package

COMMENTS

Power Pac

D45C1

30.0

-30

-4.0

30.0

30

4.0

30.0

-30

-4.0

25

GREEN

10

Power Pac

D44C2
D45C2

40

120

20

120

20

RED
Power Pad

GREEN
Power Pac

D44C3

30.0

30

30.0

-30

40

4.0

120

RED

20'

Power Pad

D45C3

40

(-4.0

GREEN

20*

120

Power Pac

D44C4
D45C4
D44C5

30.0

45

4.0

30.0

-45

-4.0

25

TO

25

30.0

4.0

40

30.0

-4.0

40

RED

120

10

TYPICAL APPLICATIONS

20

Amplifier Outputs

Regulators:

D45C5

120

20

120

20'

120

20 J

series,

D45C6

45

4.0

30.0

-45

L 4.0

40

30.0

60

4.0

25

10

30.0

-60

r4.0

25

10

30.0

60

4.0

40

120

20

30.0

-60

-4.0

40

120

20

30

60

4.0

40

120

20

30

-60

-4.0

40

120

20 1

80

4.0

25

^^^^B

30

-80

-4.0

25

30

80

4.0

40

120

30

-80

-4.0

40

120

30

80

4.0

40

-80

-4.0

D44C7

Low

RED
GREEN
Power Pac

Collector Saturation
<s>

3.0A

Ic)

RED

Power Pac

Excellent Linearity

D45C7

GREEN

Fast Switching

Power Pac

Round Leads
TO-66 Compatible

D44C8
D45C8

D44C9

Typical

tr,

50

RED
Power Pac

MHz

GREEN
Power Pad

RED

D45C9

D44C10

D45C10

D44C1

':i3Q'-'Ji

D45C11

D44C12
D45C12!
hpE measured

at

30
=

40

120

IPower Pac

RED
Power Pac

GREEN
Power Pac

RED

20

Power Pac

GREEN

20
20

20

MUCONCHIP

"Cf^SjJft
*

^S^COPPEH wn

.032

POWER PAC
117

DM.

229
229

229
229
229
229
229

229
229
229
229

RED

229

Power Pac

SILICONE

229

Power Pac

GREEN

COPPER HEATWNK

229

229

Power Pad

2A

Power P ac

GREEN

^^^^B
j

229

Power Pad

Voltage (0.5V Typ.

229

'

GREEN

FEATURES

229

229

Power Pad

switching

30.0

229

GREEN

RED

Inverters/Converters

D44C6

229
229

Power Pac

Power Pac

shunt, and

229

229

SILICON POWER TRANSISTORS

COMPLEMENTARY - 10 AMPERES

pt

GEType
PNP
NPN

T c = 25C VrFO
Min.
Max.
(W)

D44H1

D44H2

lr
Cont.

(V)

(A)

30

10

hFE
@1V,2A @1V,4A
Min.

Min.

35

20

Package
.

COMMENTS

T V e

RED

50

D45H1

50

50

D45H2

50

-30

-10

30

-30

10

-10

Power Pac

GREEN
35
60
60

20

40

40

Power Pac

RED
j

Power Pac

GREEN
1

Power Pac

RED
D44H4

D44H5

is

D45H4

D44H10

D44H11

50

D45H5

50

m
D45H7

D44H8

50

D44H7

D45H8

D45H10

D45H11

D45H12I

-45

10

-10

45

-45

10
-

10

35

20

Power Pac

GREEN
35

60
60

20

40
40

Power Pac

RED
!

Power Pac

GREEN
1

TYPICAL APPLICATIONS

Power Pac

RED

Amplifier Outputs

60

10

35

20

50

-60

-10

35

20

50

60

Power Pac

Regulators: series, shunt and

GREEN

switching

Power Pac

Inverters/Converters
10

60

RED

40

Power Pac

FEATURES
50

45

50

50

D45H9
-

50

50

-60

-10

-60

-10

80

10

60

60
35

40

Fast Switching
I

50

-80

10

35

20

Round Leads
TO-66 Compatible

Typical

50

50

80

-80
-80

10

-10
L

10

60
60
60

40

GREEN
Power Pac

Collector Saturation

Voltage (0 24V Tvp

Excellent Linear ity

40
20

Low

fi.50MHz

3.

0A

cl

GREEN
Power Pac

RED
Power Pac

GREEN
Power Pac

RED
Power Pac

GREEN

40

Power Pac

GREEN

40

Power Pac

118

Package
Qut|ine
No.

229
229
229
229

229
229

229

229
229
229

229
229
229

229
229
229
229
229

'

SILICON SIGNAL DIODES

100 MA TYPES

BV
Number

Part

Min. (V)

1N914
1N914A
1N914B
1N916

1N916A
1N916B
1N4148*
1N4149

@ 25C

Ir

100/JA

V F Max.

Co
@ DV

(pf)

Max.

"

(T?A)

10 U

25

TOO

25

100
100

25
25
25

@ Vr

(V)

(V)

ImAI

If

trr

(17SEC)

100
100

25

30
20
20
20
20
20

100

25

20

1.00

10

100

25

20

~t.#7

10

1.00

50
20

1N4151

75

50

50

1N41S2
1N4153*
1N41S4
1N4305
1N4444
1N4446
1N4447
1N4448
1N4449
1N4454*
1N4531*
1N4532
1N4533
1N4534
1N4536
1N4727
1N4863

40
75
35
75
70

50

30

50

50

100

25

I'w&x

\.

"*9'f.'"l

4
4

20
100
10

1.00

20
30

4
4
4

1.00
...'Wfcfc-

1.00
1.00

.880
.880
1.00

M&

4
2

20
30

2
2

100

50

50

50

100

25

20

*ifr7

100

25

20

1.00

20

100

25

20

1.00

100

100

25
100

20

1.00

30

50

1.00

10

75
100
75

25

20

100

50

00

10

100

20

4
4

1.00

10

1J&K

10

40

50

30

880

20

76

50

50

*jift

20

100

25

30

30
70

100

20

10

2
4

50

50

1.20

100

100
75
40

30

30

1.00

50

30

30
30

1.00

50

50

50

100

20

30

30

30

50

MA 1702

25
100
75

30

30

."!

50

4
4

MAI 703
MA1704

40
25

50
100

30
20

t.#~

15

2000
2000

12

25

2000

22

DA1701

DA 1702
DA1703
DA1704
MA1701

DZ800
DZ805
DZ806

1.00

Wft.

IJJ*''
'

"

.80

50
30
10
10

Jftd

in

1.00

.800

Package
Outline

Package
Outline

D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D035
D034
D034
D034
D034
D034
D035
D035
D035
D035
D035
D035
D034
D034
D034
D034
D035
D035
D035

Number
38
38
38
38
38
38
38
38
38
38
38
38
38

38
38
38
38
38
1

38

39
39
39

39

39

38

38

38

38

38
38

39

39
39

39

38
38

38

LOW LEAKAGE DIODES

DE104
DE110

40
40
40
40
40
40
40

DE112
DE113
DE115

JAN

and

JANTX

.02

20

.890

30

.880

20

.880

20

25

20

30

50

JUBJ

200
10

jog
200

JS8J
200
200

.880

types available

200

D035
D035
D035
D035
D035
D035
D035
1

119

Measured

38
38

38
38
38

|
|

38
38
at

5jUA

SIGNAL DIODES
100

200

MA TYPES

h
BV

Number

Part

1N4150

Vf

25C

ffi

(V)

(nA)

50

100

3#

1N4606

100

BV
100uA

1.00

200

30

1.00

200

50

1.00

200

1N4451

1N4607

2.5

Outline No.

D035

38

D035

38

D035

38

Vf

Co
OV

Max.
Vr(V)

(V)

@
lF(mA)

(pf)

trr

(nsec)

Package
Type

Package
Outline No.

40

50

30

1.00

300

10

0035

34

8S

100

50

1.00

400

10

D035

38

"'

2.5

Package

Package
Type

Ir

(nA)

(V)

trr

(nsec)

(pf)

- 400 MA TYPES

25C
Max.

Min.

Number

Part

@
lF(mA)

50

200

(V)

Vr(V)

30

1N4450

Co
OV

Max.

Max.

100/i*
Min.

100

50

.96

400

iv

D035

33

1000

300

120

250

MO

D035

38

1000

250

1.00

200

300

D035

38

1000

250

1.10

250

900

D035

38

ZOO

1000

200

1.10

250

am

D035

38

DT230G

ISO

1000

150

1.10

250

300

D035

38

DT230A

1(0

1000

100

1.10

250

300

D035

38

1000

50

1.10

250

380

D035

38

1N4608
DT230C

300

DT230H

SS'

DT230HI

2S8

DT230B

DT230F

50

JAN and JANTX types available

MULTIPELLET SILICON SIGNAL DIODES

40, 41,

42

Ir

@0V

Max.

5/iA

Max.

trr

lF(mA)

(pf)

(nsec)

Package
Type

Package
Outline No.

@Vr(V)

(V)

20

1.58

10

25

D035

2.32

10

20

D035

.800

10

30

D035

38

.830

10

35

D035

38

20

1.61

25

0035

42

30'

20

2.35

10

D035

41

1N5179

30

20

3.20

10

MPD200

70

MPD201

50

Part

Number

1N4156
1N4157

(V)

(nA)

30

50

30

50

1N4828

30

1N4829

30'

1N4830

100

50

MPD203

50

STB567

50

MPD301

60

MPD302

60

STB568

60

MPD400

120

MPD401

75

MPD402

75

STB569

75

90

20

1.57

10

1.60

10

20

1.51

10

20

1.61

30

30

40

20

500

D035

15

D035

42

2.32

0035
15

D035

42

15

D035

42

10

D035

41

10

D035

41

D035

20

2.32

10

20

2.31

Co

30

3.07

ml

3.01

10

D035

40

20

3.01

10

D035

40

20

3.01

50
90

20

10

30
50

90

MPD202

Measured

20
20

30

Co

Vf

25C

Max.

BV

10

D035
D035

D035

lOO/tA

120

^^

TUNNEL DIODES

^^

PACKAGES

APPLICATIONS

UHF

Oscillator
Level Detector

Detectors
Mixers
Limiters

Peak Sensing
Frequency Divider
Converter
High Speed Logic
Sampling Circuits

Fast rise time pulse

generators
Amplitude Discriminator
Sampling Circuits

Compressors
Power Monitors

Fast threshold detectors

Ultra High Speed Logic
Level Sensing

Amplifiers and self

Doppler mixers
Detectors

oscillating mixers

through X band
Phase array radar
Frequency converters
Low level digital phase

Limiters

Compressors

shifters

Pulse position modulators

TYPES AVAILABLE
fifi

40

TD400

BD400

Tunnel Diodes

Back Diodes

Microwave

Microwave

*"c
05

N
3C
CD

20

>

TD260

UJ
=>

Tunnel Diodes

3
^34

Ultra High

Speed

Switch

1N3712

BDI

Tunnel Diodes

Back Diodes

General Purpose

General Purpose

DC

FEATURES
Low

Cost
Hermetically Sealed
Electrically

&

Low Cost

Very

Hermetically Sealed

Electrically

&

Mechanically

Mechanically

Rugged

Rugged

fast switching.

Very stable at elevated

operating
temperatures.

Low

functional cost.

Mil. Versions Available

Controlled negative

Controlled cutoff
frequencies
Low noise

conductance

lv
ip

Peak Point
Current

operation
TD-1

Current
Max.
(mA)

I.0 10%

0.18

1N3713

1.0

2.5%

0.14

1N3714

2.2

10%

0.48

2.2

2.5%

4.7

10%

1N3716
1M3717

4.7

1N3718

10.0

i 2.5%
10%

10.0

2.5%

22.0

1N3719

'

1N3720
1N3721
TD-9
1

(rnA)

Valley
Point

1N3712

1N3715

>

Very high frequency

capability
l/F noise ratio

Low

inductance
Stable at elevated
operating
temperatures

TUNNEL DIODES
GENERAL PURPOSE

47

+ 100C

capacitance

Low inductance
Low "on" voltage

Low package

Low

Vr

Pk
Capacitance
Max.
(pF)

10

'7.

Po?nt
Voltage

*!*

Typ.
(mV;

<mV)

65

350

65

Voltage
Typ.

(mV)

8s
Serin
Resist.

Max.
(Ohms)

Negative

Conductance
(mhos x 10-)

500

4.0

510

4.0

8.5

18 Typ.

350

500

$9}

0.31

10

65

350

510

3.0

1.04

50

65

350

500

40 Typ.

0.60

25

65

350

510

41:

2.20

90

65

350

500

1.5

80 Typ.

1.40

50

65

350

510

1.5

85

500

1.6

10%

4.80

ISO

65

350

2.5%

3.10

100

65

350

10%

0.10

60

Mil. Versions Available.

121

19:

10

3.0

3.4'

1.6

2.8

180 Typ.

190
6.0

Typical
(6Hz)

65

Resistive
Cutoff

Frequency

8 Typ.

25

22.0;!:
0.5

Vfp
Forward
Peak

30

4.0 Typ.

2,fi.

"SI

BACK DIODES
GENFRAL PURPOSE

X"
=

Ls

1.S

Reverse Voltage

C
Total

Current

Max.

Capacitance
Max.

(mA)

(PF)

nH

GE Type

Vm
Ir

<b>

*&

5.0

46S

2.0

10

$'

BD-3

0.2

10

8#'

BD-4

0.1

10

380

BD-5

0.05

10

886

'

BD-7

0.01

Ls

330

10

$00

47

Peak
Point

TD-260 <

(mA)
Current

Valley
Point

Current
Max.
(mA)

10%
10%
4.7 10%
4.7 10%
10.0 10%
10.0 10%
10.0 10%
22.0 10%
22.0 10%
50.0 10%
50.0 10%
100 10%
100 10%

TD-261A
TD-262

TD-262A
TD-263

TD-263A

TD-263B
TD-264

TD-264A
TD-265

TD-265A
TD-26S

TD-266A

(psec.)
*"

':.'.

130

,"-'

,-"

0.2

a* .'
y

0.1

i^for-.

'

1-0

0.7

0.5

0.4

0- 4

0.4

0.4

'

"-

0.5

46S

Peak

Capacitance
Max.

Point
Voltage
Typical
(mV)

(PF)

VFP

y
V ".L_

Vl-

IV

100C

Operation

TD-261

488

Typical

,:
-

ULTRA HIGH-SPEED SWITCHING

1.5 nH

li>

46S
'

WV

1.0

'

3 Ifi
Typical

|F2

TUNNEL DIODES

***^

10

46

tr

Rise

Time

(mV)

20

0.02

mV

1.0

BD-6

10

10.0

0.5

',

'.448

BD2

ftr

mA

(mA)

BD-1

44ft.

Forward
Current
Vfi
90

(mV)

(mV)
<

V R2

max

Ip

VF2
Forward
Voltage

Ifi

Min.

Peak Point

Rs

Forward
Voltage

vSEl*

rinirli

'HE?'
mv)

If

Ip

Typ.
(mV)

'

tr

Series

Rise

Resist.
Typical

Time
Typical

If!)

(psec.)

2.2

0.31

3.0

70

2.2

0.31

1.0

80

390

.S80-780

50
70

0.6C

6.0

80

390

500-700

3.5

0.60

in

90

400

5G0-70Q

*-0

-7*

1.40

9.0

75

400

500-700

SSB

1.40

5.0

80

410

8J86-5SJB;.

17
20

1.40

2.0

90

420

55Q-700

2.5

68

3.80

18.0

90

425

60OTyf>.

1.8

tffi

3.80

4.0

100

425

550-700

2.0

84

8.50

25.0

110

425

StSTjp.

1.4

100

390

00-700/

43A"

!*

aao/
'

too".

8.50

5.0

130

425

640 Typ.

1.5

35

17 50

35.0

150

450

WtyP>

1-1

S?

17.50

6.U

180

450

660 Typ.

!- 2

_s_

dapi/ ninnro
BACK
DIODES
MICROWAVE
49
C
Is

0.1

Peak Point

Total

Current
Max.
(mA)

Capacitance
Max.

nH

GE Type

OS

BD-402
B 0-403

9Jt..

BD-404

%i
'ws

BD-405
BO-406
BD-407

"

'

'''.

1
J

&M

Ifi

Min.

Forward

Vr 2

Vr,
<<t

Ir

Ip

max

(3

Ir

(PF)

(mV)

(mV)

420

465

<a>

mA

VF2
Forward
Voltage

Current
Vfi
90

10 mV
(mA)

(Hi

Typical
3 Ifi

If2

(mV)

"Of

5.0

'

400

465

2.0

380

465

1.0

170
160

'''".".

qm"''

Reverse Voltage

isrer

350

465

0.5

330

465

0.2

160

330

465

0.1

160

122

">~
.

''',?.

UNIJUNCTIONS, TRIGGERS

AND SWITCHES
Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued developing an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can
be used as a power thyristor trigger, and each offers a special advantage for a particular trigger function. In addition,
each can be used for various non-trigger applications.

The features
each series.-

both

in

which you

design and characteristics

receive with these products are concisely defined for

TYPES
CONVENTIONAL UNIJUNCTIONS 2 N489-494 proved
2N2646-47

low

reliability,

MIL spec

version.

cost, proved hermetic sealed device.

PROGRAMMABLE UNIJUNCTION TRANSISTOR (PUT) variable threshold,

and

low cost, fast switching speed,

circuit adjustable electrical characteristics.

COMPLEMENTARY UNIJUNCTION TRANSISTOR ultimate in temperature stability for timing and oscillator
applications.

SILICON UNILATERAL SWITCH (SUS) a

stable fixed

low voltage threshold, low cost, high

performance

"4-layer diode."

SILICON BILATERAL SWITCH (SBS)

low

voltage triac trigger, two silicon unilateral switches connected

back to back.

SILICON CONTROLLED SWITCH (SCS) high

triggering sensitivity, 4-lead capability for multiple loads or

dv/dt suppression.

APPLICATIONS

^"^^

Unijunctions

^v^

Conventional

~~-\

\^

Use

Complementary

Programmable

D5K1

SUS
2N4983-90

SBS
2N4991-93

'

2N1671.2N2160

2N264S
2N2647

D5K2

2NS027
2N6028

DC, Lo Cost

DC, Hi Perf.

DC, Volt Regulator

DC, Inverter

I'

AC,

'

E'

...

3
~

FEE
FEE

DC, Hi AI/AT

"C
A,

2N489-94,

<p.

Hi Perf.

AC, 0, Hi

AC, Lo RFI
AC, 0, Lo Cost

>1

hr.

F"

F'

E'

>1

min, Lo Cost

>1

min, Stable

jj

<1

min, Lo Cost

<1

min, Stable

<10V
10V-25V

C
*
E
1

N
-

>25V

Stability

Cost

Adjust, Range

F'

Military

F!

Hi-Rel

r>

Economy

Excellent, F
Fair, P
With additional circuitry
Hermetic version 2N6U6-18

Poor,

Not Applicable

123

CONVENTIONAL
UNIJUNCTIONS
the workhorse of
General Electric produces a very broad line of standard UJT's. The TO-5 ceramic disc bar structure device has been
the unijunction industry for over 10 years. MIL versions are available on the 2N489-494 series.
The cube structure TO-18 series offers excellent value for those requiring proved, low cost units.

Applications
Oscillators

SCR Triggers

Timers
Sawtooth Generators

Frequency Divider
Stable Voltage Sensing

VOB,

Ra>o
Interbase
Resistance

@ Vie = 3V
GE

Ie

Type

<K<2)

2N489
2N4B9A
2N489B

'

Valley

Standoff
Ratio

Current
Min.
(mA)

Vib

10V

.51-.62

4.7- 6.8

Emitter
Reverse Current

Peak Point

v
Intrinsic

Emitter
Current

Max.

Max.

G*A)

(AA)

Base One
Peak Pulse
Voltage

Tj=25C

12
12
6

2
0.2

60
60
30

12
12
6
2

f.,i
2

60
60

0.2
.02

30

Comments

Min.

Package

(V)

V 2 E

31

2N490
2N490A
2N490B
2N490C

<

.51-.62

6.2- 9.1

2N491A
2N491B
2N492
2N492A
2N492B
2N492C
2N493
2N493A
2N493B

2N494
2N494A
2N494B
2N494C

<

6 8

.56.68

6.2- 9.1

.56.68

12
12
6
2

2
2

12
12
6

60

f$0

0.2

30

12
12
6
2

,1

2"

60
60

0.2

30

25
25

12
12

4.7-

'

'

,62-.75

4.7- 6.8

'

2N1671
2N1671A
2N1671B

,62-.75

6.2- 9.1

.47-.62

4.7- 9.1

2N1671C

2 iss

"

25

2N21E0

4.0-12.0

2N2646

4.7- 9.1

.56-.75

2N2647

4.7- 9.1

.6S-.82

D5J-43

4.7- 9.1

,68-.82

05J-

4.7- 9.1

2N2840

7-

9.1

6
2

.68-.82
'

.62 Typical

T A =.

60
60
30

2
0.2

-55C

in

recommended

GE SCR's over range

circuit to trigger

12
12
6

2N491

"A" versions are guaranteed

30

to 125C.

31

60

93
.02

"'

.02

60
30
30

3t

SCR

triggering
guarantees lower leo and If for long timing
periods with a smaller capacitor.

"B" versions

addition to

in

31

31

30
30
30
30
30

Industrial types.

12

30

General purpose

12

30

General purpose.

30

For long timing periods and triggering high

current SCR's.

30

30

General purpose.

30

30

General purpose

0.2
.02

0.2

12

30

JAN & JANTX types available

>Vn = 1.5V

124

31

low

cost.

low cost

For l.S volt applications.

30
30

PROGRAMMABLE UNIJUNCTIONS
(PUT
The 2N6028

omcRSI
2N6028

- D13T

SERIES)

specifically characterized for long interval timers and other applications requiring low
leakage and
2N6027 has been characterized for general use where the low peak point current of the

is

po,n curre " t The

}
not essential.
-,

is

Applications:

SCR

Trigger

Pulse

Sensing Circuits

& Timing

Circuits

Sweep Circuits

Oscillators

Outstanding Features of the PUT:

Low Cost
Low Leakage Current
Low Peak Point Current
Low Forward Voltage

Programmable y
Programmable R
Programmable p
Programmable lv

Fast, High Energy Trigger Pulse

Planar Passivated Structure

Peak

Anode

Gate to

Anode

DC
Anode

Current
20 sec.

Igao
Leakage

Pk. Point Current

Valley

Vo

@Rs = @Rg =

Current
Min.

Output
Voltage
Min.

Current

JEDEC

Max.

Max.

Max.

10 k

Types

(V)

(mA)

(A)

(nA)

(AA)

2N6027

40

150

^* S^11>

10

2N6028

40

150

10

1%

D.C.

Current

@ 40V

t.

Max.

Reverse
Voltage
Max.

Meg.

(/A)

;Vi'f '..

\'~M

Rs

10

Pulse
Rate of
Rise

Max.

Package

(*A)

(V)

(nsec.)

70

80

175

25

flHHH

80

175

COMPLEMENTARY UNIJUNCTIONS
(D5K SERIES)

The D5K

offers the ultimate in unijunction stability and uniformity. Low frequency oscillators and timers can be
built
using the D5K with better than 1.0% accuracy over extended temperature ranges. The D5K has characteristics like
those of a standard unijunction except the currents and voltages applied to it are of opposite polarity than those
of
the standard devices.

Rio
Interbase
Resistance

GE
Type

l,

= 0.1mA

kfi

Valley

Intrinsic

Current
Min.
(mA)

Standoff
Ratio

If

lEO

Vo

Peak Point

Peak

Operating

Frequency

Pulse
Voltage
Min.

Temp.
Range
Top

from 2SC

Max.

Emitter
Reverse
Current
Max.

<#A)

(nA)

(V)

(C)

Emitter
Current

125

Stability

_55

to

+150C

Package

AND BILATERAL SWITCHES

SILICON UNILATERAL

(SUS, SBS)

The General

SUS

Electric

having thyristor electrical characteristics closely approxi-

a silicon, planar monolithic integrated circuit

is

mating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of
0.02%/C. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages, and to obtain transient-free waveforms.

The SBS

is

a bilateral version of the forward characteristics of the

tions with the

same low temperature

SUS.

provides excellently matched characteristics in both direc-

It

coefficient.

If

Peak
Recurrent
Forward
Current
100C,
10 s,

If

Vacr
Reverse

GE

Max.

Continuous
Forward
Current
Max.

Type

(V)

(mA)

Voltage

2N4987

1%

3D

2N4989

200

'p:f-'

2N4990

2N4983

3C

2N4984

Vs

Coefficient
of

Switching
Voltage

Pi
Dissipation

Switching
Voltage

Min.

(A)

(mW)

(%/C)

(V)

200

JJ

Tc
Temperature

duty cycle

175

175

'jr'fjtf*'

2N4988

300

10

350

10

350

..02

300

Max.

Forward
Blocking
Current
5V

(V)

UA)

(mA)

(V)

(mA)

1.0

15

1.5

0.1

Is

10

--.05

Vo

7.5

''JjiM'"'

*tff'"v"

7.5

8.2

175

10

300

10

350

.05

7.5

7.5

8.2

Vf

Forward
Voltage

10

2N498S

30

200

10

350

2: .02

'.:**-..

175

1.0

300

1 5

>. ?<Bt>V

1.0

15

I'yyfjjr,

0.1

.5

0.01

1.0

0.1

1 5

175

73

2N4992

200

""^Bi

16

3.5

.5

15

,-,

V&ft.''

1.0

#&

,:

H
3.5

.75

3.5

1.5
'-

%^tf''
3.5

262

,":s^h

2N4991

Package

(V)

2N4986
75

Holding

200mA Current

"CI

'.

Pulse
Voltage
Min.

Ih

0.1

M^h'
"<J*fe"

200

Peak

Switching
Current
Max.

300

10

',

17

<w?,"

.75

3.5
3.5

1.5

16

is

2N4993

,,.

JtS

175

05

350

SILICON

^'''jBMf-'J*

""JkS-1

.5

300

7.5

10

^''"@lK

1.0

',"

1.5

1.7

262

1th

CONTROL SWITCHES
(SCS)

High triggering sensitivity. 4 lead capability

multiple load or dv/dt suppression.

for

28

Charac-

Conducting
Charac-

teristics

teristics

Cutoff

GE
Type
3N81

Vak

If

Anode

Continuous
DC Forward
Current
(mA)

Voltage
Blocking
(V)

Peak
Recurrent
Forward
Current

100/isec
(A)

Max.
Gate triggering
Characteristics

Gate
Ratings

Ib

Cathode

@Vak

Gate
Peak
Current
(mA)

Rgk=

Igk

Pi

ioKn

20uA

1/iA

(mW)

<*A>

(mA)

(V)

(V)

Iga

65

200

500

400

20

65

3N82

1 'C

200

1.0

500

400

20

1.5

100

3N83

70

50

0.1

50

200

20*

4.0 t

3N84

40

175

100

320

20

2.0

3N85

100

175

20*

3N86

65

200

20

Measured @125C.

Measured

5
1

in

100

500

400

@Va k=40V,

Rgk=

Vgtk

Igtk

V6A

Vsk

Ih

10KO
150C

Rl=
R

Vgta

@V ik=40V,
Rl== 800!),

Package

Rg <=10K

SA==C
(V)

(mA)

'^^^^'<

1.5

.4 to

.8

*^P?1S

1.5

-.4

-.8

28

(MA)
1

Igta

800!!,

1.0

.4

to .65

70

150 t

.4

o 80

40

10

.4 to .65

2.0

100

10

.4 to .65

0.2

65

.4 to .65

0.1

(V)

to

28

28

-.4

to

28
-.8

'

special test circuit (See specification sheet).

ADDITIONAL REFERENCE PUBLICATIONS

ORDER BY PUBLICATION NUMBER
90.10
90.12

The Unijunction Transistor Characteristics

and Applications
Unijunction Temperature Compensation

90.19

Unijunction Frequency Divider

90.70

The D13T

A Programmable Unijunction

Transistor

126

90.72

Complementary Unijunction Transistors

jltf!?

I
wn&

mm

Mm
JF
)Mftri$y

RUMn

OPTOELECTRONICS
INFRARED EMITTERS
MIN.

GE TYPE PAGE
NO.
l

LED55C
LED55B
LED56
LED55CP
LED55BF
LED56F

F = 100mA

5.4mW
3.5mW

1341
1341
1341
1341

1.5

RISE

FALL

WAVELENGTH

TIME

TIME

F = 100mA TYP.
'

1,7V
1.7V

mW

n.

1.7

METERS

TYP.

1.7V

n.

SEC. TYP.

300
390
300
300
300
300

940
940
940
940
940
940

'

1.7V
1.7V

5.4mW
3.5mW
1.5mW

1341
1341

MAX. PEAK EMISSION

VF @

Po@

n.

MAX. MAX. Ip
CONT.
PD

mW

SEC.

100
100
100
100
100
100

1300
1300
1300
1300
1300
1300

200
200
200
200
200
200

mA

DETECTORS
PHOTO TRANSISTORS

L14G1
L14G2
L14G3
L14H1
L14H2
L14H3
L14H4

SENSITIVITY (ma/mw/cm 2 )

PAGE

GE TYPE

NO.

&w
1337

.3

1.2

Id (nA)

(V)

MAX.

45

100
100
100
100
100

3f.

45
45
45
60
30
60
30

m:

25

40
25
40
25

40

100
100
100
100
100
100

45
45
60
30
60

.05
.2
.2

.05

i$3ft

BVbco

(V)

.6

1337
1339
1339
1339

BVceo

MAX.

MIN.

SWITCHING TYP.
(MSEC.)

tr

tf

(MSEC.)

TYP.

V CE(SAT)

.4

5
5

.4

.4

5
5
5

.4

.4

.4

75
75
75
75

50
50
50
50
50
50

100
100

PHOTO DARLINGT0NS
2N5777
2N5778
2N5779
2N5780
L14F1
L14F2

sm

.25
.25

508
508
508
1335
1335

_
_
_

1.0
1.0
15.0
5.0

'

25

40
25
25

2$,

75
75

'

.8
JS

.8
.8
.8

J-

PHOTO SWITCHES
GE TYPE

PAGE NO.

L8
L9

1129
IS29

IRRADIANCE TO TRIGGER

BLOCKING

(mw/cm 2 )

VOLTAGE

(nA)

IOmA
10mA

253Q0

10

25-200

4.2

MAX.

Vr(V)
1.4
1.4

0PT0 COUPLERS
PHOTO TRANSISTOR OUTPUT
GE TYPE

H11A1

H11A2
H11A3"

H11A4
H11A5
H11A520
H11A550
H11A5100
H15A1
H15A2
4N25
4N25A
4N26
4N27
4N28
4N35
4N36
4N37
H74A1

PAGE
NO.

ISOLATION

VOLTAGE

(V pk )

MIN.

121$
1275
1277
1277
1279

2500
1500
2500
1500
1500

1285
1285
1285
1313
1313
531
531
531
531
531
525
525
525
1327

5656
5656
5656
4000 VRMS
4000 VRMS
2500
1775 V RMS
1500
1500
500
2500 VRMS
1750 VRMS
1050 VRMS
1500

CURRENT
TRANSFER
RATIO MIN.
'

-.SB*

20%.

20%
10%

30%
20%
50%
100%

20%
10%
20%

20%
20%
10%
10%
100%
100%
100%

128

30
30
30

30
30
30

30
30
30
30

30
30
30

;.

VCE(SAT)

(MSEC.)

(VOLTS)
MIN.

50
50
50
50
100
50
50
50
100
100
50
50
50
50
50
50
50
50
100

TYPICAL

BV CE0

D (nA)
MAX.

MAX.

Tr

Tf

2
2
2
2
2

2
2
2
2

2
2
2
3
3
3
3
3
3

.4

.4

1
.4

-;

2
2

.4

3
3
3
3
3
3
3

.4

.4

.4
.5

(iiiiiiiNi
*

.5

1
1

30

3
5

30

'

30

1
j
1

PROGRAMMABLE THRESHOLD COUPLER

CURRENT
TRANSFER
RATIO MIN.

ISOLATION

PAGE

GE TYPE

VOLTAGE

NO.

(Vpk)

MIN.

H11A10

1500

,13?1

:;

>m?

VcEISATI

(MSEC.)

(VOLTS)
MIN.

MAX.

Tr

Tf

.4

2
2

2
2

'A

Jspo

300
200
200

.4

1.0

1.0

125
125
125
125
125
125

100
100
100
100
100
100

40
40
40
40
100
100

100

'

X#0

'

50

TYPICAL

BVceo

D (nA)
MAX.

'

AC INPUT COUPLER
H11AA1
H11AA2

1500
1500

'-I3W
'

mm

100

HIGH VOLTAGE COUPLER

H11D1
-mn 2500
H11D2
1307
1500
H11D3
1307
1500
H11D4
1307
1500
4N38
1500
4N38A
1775 VRMS

10%

200

''Sttjfr

100
100
100
100
50
50

20%
20%
10%.

10%
"'!%'.

-.

iP-

-"-'

m'

A
,,

,4
,4

'

-"

PHOTO DARLINGTON OUTPUT

H11B1
H11B2
H11B3
H11B255
H15B1

H15B2
4N29

4N29A
4N30
4N31

4N32

4N32A
4N33

1293
1293
1293
:-!M51315
1315

2500
1500
1500
1500
4000
4000
2500

533
533
533
533
533
533

1775
1500
1500
2500
1775
1500

500%
200%
100%
100%

VRMS
VRMS

400%
200%
100%

VRMS

100%
100%

50%
500%
500%
500%

VRMS

3*

100
100
100
100
100
100
100
100
100
100
100
100
100

25
2S
55

25
25
30

30

30
30

30

30

JpK

-'

U.-

l&;
'

>k>

'

^
'
*

'

'

'

v
'":.

ID
iA'.

'-

'<

iA
1.0
1.0
1.0
1.2
1.0

1.0
1.0

PHOTO SCR OUTPUT

GE TYPE

H11C1

H11C2
H11C3
H11C4
H11C5
H11C6
4N39
4N40
H74C1
H74C2

PAGE

ISOLATION

NO.

VOLTAGE MIN.
2500
1500
1500
2500
1500
1500
1500
1500
1500
1500

1299
1299

1303
1303
??H**3/

.-.Su
541

1327
tt?

TRIGGER

l
D 100C
(MAX.) vA

(MAX.)

'

'

$lmA.

50
50
50
100
100
100
50
150

20mA
30mA
20mA
20mA
ijjRBm

14tnA

14mA

BLOCKING

TYPICAL

VOLTAGE (MIN.) TON

: J c
^t- <<"

V F (MAX.)

(mSEC.)

'

200
200
400
400

"-7:|jj"
1

7.

1.5
1.5

400
200
400
200
400

1.5

1.5
1

PHOTON COUPLED INTERRUPTER MODULE

GE TYPE

PAGE

OUTPUT CURRENT

NO.

(V)

H13A1

F
!f
If
If
I

H13A2
H13B1

H13B2

TYPICAL

bv E co

Id (nA)

1311
1311

20mA

= 20nA
=
=

20mA
20mA

200M
SOMA
2500MA
IOOOMA

'*'18i*

>

TONImSECJ

30
30
25
25

tf

VcE(SAT)

(mSEC.)

MAX.
.4
.4

150

150

150

1.2
1.2

MATCHED EMITTER
DETECTOR PAIRS

'

H17A1
H17B1
H19A1
H19B1

F
F
I
F
IF
I

1319

=
=
=
=

20mA
20mA
20mA
20mA

50mA
1000mA

30
100

100m A

30

2000mA

25

129

150

25
'
,

.'<*'.

150

150
.

1.2
.4

1.2

FAST RECOVERY RECTIFIERS SELECTOR GUIDE

2000

1500

1000

<

900
800
700
600
500
K

g 400
z
300
K

K
5

LU

3 200

t-f

o
>

>

1
3

0>

2!

100

90
80
70
60
50

12
20 25 30 100 140 250400 750
AVERAGE CURRENT-AMPERES

IK

STANDARD RECTIFIERS SELECTOR GUIDE

3000
8

2000

1500

tj

900
800
700
600
500

400

1000

*
1

s
O

8
1

>

9,
1

300

>
8
5

8
>
>

5
*

1
^

I
*

*
i

ly
(a

200

1
1

-J

Si

s
90
80

100

<0

>

>

70

5;

8
*

60
50
1

12

12

20

20

20 25

AVERAGE

130

100 100
35 40
CURRENT -AMPERES

35

150 160

250 275 400 7401000 1500

"

RECTIFIERS
THE INDUSTRY'S BROADEST LINE OF POWER RECTIFIERS .250 T0 1500 AMPERES, UP TO 3000 VOLTS

CURRENT/VOLTAGE RATINGS
PACKAGING

TRANSIENT SELF-PROTECTION

MOUNTING AND COOLING

GENERAL PURPOSE

HIGH-SPEED FAST RECOVERY

RECTIFIERS
.25 TO 3 AMPERES
JEDEC

GEK4001-7

A114A-M

1N5059-62 1N4245-49

GE TYPE
SPECIFICATIONS
.25

Ifm

i.rS .)

TaC>C)

Max.

TJ

50

,%,

ioo

.1

55

75

~^=
3

S$

70

55

SO

DT23QF

A14F

GER4001

AU4F.

100

DT230A

AHA

GER4002

A114A

150

DT230C

200

DT230B

1N5059

250

OT230H

A14C

400

--

1N5060

1N4246

500

A14E

600

1N5061

1N4247

*im>

GER4003

1N5624

1N5625

A114I

GER4005

A114M

1N5626

1N4248*

GER4006

1N5627

A14P'

1N4249

GER4007

30

40

125

Operating junction temperature range (C)

-65

to

-65

T,t,

Storage temperature range (C)

Vfm

Max. peak forward voltage drop

rated Ifiavi (1 phase operation)

'"

Max. reverse recovery time Usee)

PACKAGE OUTLINE NO.

NOTE:
Average forward current 1 amp.
* JAN & JANTX types available

Ta=90C.

(HI

WBSbb

-65

to

175

to

200

50

-65

'

to

175
1.0

1.1

65 to

65

160

-65

200

to

0.3

38

119

119

25

65

to

to

175

65

65

to

to

A115B

A15C

A115C

''ifm

A115D

1.0

Junction, operating and storage temperature range

65

to

119-2

+ 165C.

to

17b

-G5to

1.1

25

-65

1.1

119

A115M

200

119

A115E

*vwt

125

175

Mll&

A15N

175

1.2@
_55<-C

131

3.5

-65

to

175

65 tD

jjijj^i

'

ftMW

1N5062

HH

'

-MttC'

GER4004

800

Max. non-repetitive for 8.3 msec. (A'sec)

A115F

A115A

1000
Max. peak one cycle, non-recurrent surge
current (60 Hz sine wave, 1 phase
operation)
max. rated load conditions (A)

'4PK

"MS*'

NW.S

300

150

AttSA-M

repetitive peak reverse voltage (V)

A15A-N

(A)

Ifmiavi

VnM(r. P

1N5624-27

110

20

-65
-65

75

175

1.0

1.0

I119

to

150
to

0.2

119.2

1N1341A-48A

1N1612-16

JEDEC

RECTIFIERS
TO 12 AMPERES
1N3879-83

1N3987-90

1N1199A 1206A
1N3670A-73A

A28^

GE TYPES
SPECIFICATIONS
'fm(av)

ia

12

12

12

12

150

150

150

100

150

100

135

135

^^^H

'

@ Tc
Max.
w
VRM(rep)

= (C)

peak reverse

repetitive

vo tag9 (v
,

^^^B
1N1612

50
100

1N1613

150

^^^B
1N1614'

200
300

1N1615"

400
500

1N1616*

600

'FM

(surge)

.
1

700

WBmU

800

flfifiH

900

^^^^H

1200

1N3879

IHMHHH

1N3880

flHiHH!

ill

1N3881

N3989

N3990

150

Max. non-repetitive for 1.0 msec

(A^sec)

26

25

2b

-65

-65

-65

Storage temperature range (CI

da

Max. thermal resistance, junctionto-case(C/W)

Mex. peak forward voltage drop
rated F(AV (1 phase operal

@T C =(CI
Max. reverse recovery time

PACKAGE OUTLINE NO.

to

to

+200

1190

-65

-65io
7.0

65 tn
+200

4.25

4.25

HH

to

ISO
120

-65

1N3891*

A28B

A28C
A28D

1N3889

1N3892

1N1204A*

1N3893'

1N1205A

N5331

240

150

N3670A

1N3671A*

1N36/2A
1N3673A'
1

^^^^^^^B
to

+150

65
200

to

US'

-65

1.4

25

120

120

120

25

120

best

way

to assure reliability in a low-current rectifier pellet

package that really protects

vibration and temperature.
i

it.

Protects

it

is

that's just

what we do with General

rectifiers. Solid

132

to

BHp

1.4

135

25

120

120

120

to put

Electric's glassivated

glass provides passivation

rectifier, the

-65

100

from shock, humidity,

For high-frequency applications, GE offers a fast-recovery

14, with a 200 nsec. max. reverse recovery.

A1

to

25

1-amp (A14)
and protection
of the silicon pellet's P-N junction - no organic material is present within
the hermetically sealed package. In addition, rigid mechanical support and excellent thermal characteristics are provided by the dual heat sink construction.

And

and 3-amp (A15)

-65

to

+175

200

JAN & JANTX types available.

* A28 reverse polarity is an A29.

The

175

-65

2.0

^^^^^^^B

200

to

2.0

1.4

1IM4511

+200

2.0

25

1N4510

M75

^^^^^^Hi

to

67

67

-65

240

240

to

+200

2.5

25

HHHI
IBBi

+150

<200

B
Hi

-65

to

+ 175

^^^^^B

1.1

(nsec)

-65

to

200

1N3890*

A78F
A28A

1IM1206A"

1N1203A.

75

+200

+200

^^^^H

150

1N1200A
1N1201A
1N1202A'

N3883
-

1 N3937
1N3988

^^^^^H
1N1199A

1N3882
1

150

tion) (V)

MMiBI

Max. peak one-cycle, non-recurrent

surge current (60 Hz sine wave, 1/
phase operation! @ max. rated load
conditions (A)

T stg

T rr

Operating junction temperature

range (C)

VFm

1N1341A
1N1342A
1N1343A
1N1344A
1N1345A
1N1346A
1N1347A
1N1348A

1000

TJ

JC

1N4510-11

1N3889-93

1N5331

1-amp

20

1N248B- 1N119SA-

JEDEC

SOB

98A

RECTIFIERS
TO 25 AMPERES

1IM2154

60

1M4529.
:

1N1183A-

90A

1N3B99
3903

1N390913

GE TYPE
SPECIFICATIONS
Max. average forward
current (1 phase oper-

'fm(AV)

JJI^
^3765-68

20

25

35

150

150

145

140

1N248B

1N1191A

35

v~..,
v RM(rep)

-its

14

A40F

A44F

30

20

20

26

110

110

75

ation) (A)

T C =(C)

IMKh

150

100

100

1N1183A

1N3899*

1N3909*

^m^

a44f

1N3900*

1N3910*

A44A

1N3901

1N3911*

AJI39

Max.

repetitive peak
reverse voltage (V)

1N249B

1N1192A

1N2154

1N2155

1N1193A
200

1N250U

300

600

1N1194A

1N2156

1N1183
1N1184*

1N1184A

1N1185

1N1185A

IN1 186*

1N1186A

'flarjS

A44B

^JJ

1N1195A

1N21b7

1N1187

1N1187A

1N3902*

1N3912*

^jS!

1N1196A

1N2158

1N1188*

1N1188A

1N3903*

1N3913*

^Ann*

A44D

1N3213

A44E

AftttKi

A44M

A13SM:

1N1197A

1N2159

1N1189

1N1189A

1N1198A

1N2160

1N1190*

1N1190A

700

A44C

A40
1N3214

A40M

1N3765

800

1N3766

900

1N3767

1000

1N3768

1f>M@29

1200

1N5332

1N4E30

A139N
A139P

Max. peak one cycle,

,

l,_
'FM(surge)
,

non-recurrent surge current (60 Hz sine wave,

, phase operation <a
max. rated load conditions (A)

400

500

800

300

225

300

300

400

100

100

500

2 t rating (nonI
repetitive for 8.3 msec)

Max.

A2

250

Operating junction temperature range (C)

-65
+1

Max. thermal resistance,

junction-to-case (C/W)

to

75

-65

Storage temperature
range (C)

R0jc

500

sec

+175

k65 to
+200

1.2

1.4

to

-65

65 to

-65

to

to

+200

1-200

-65

-65

to

-65

to

+200

-65

to

+200

+200

1.0

1.0

to

+200

-65 to
+ 150

-65

-65

-65

to

+175

+175

1.5

1.0

Max. peak forward

voltage drop @ rated
'f{ AV) (1 Phase operation) (VI

@TT C =
T,r

(C)

1.2

1.8

1.4

to

+175
to

-65

,**#'#

to

+175

-65

+12S

-40

to

+175
1

-5

Typical

Typical

loo

1.00
Typical

Typical

id!

+200
1.0
!

1.85

25

25

w*

.'

140

115

25

2S

25

25

75

Max. reverse recovery

time (nsec)

PACKAGE OUTLINE NO.

JAN & JANTX types available.

123

>23

123

133

200

200

123

123

500
125

123

RECTIFIERS
100 TO 150 AMPERES

GE TYPE
SPECIFICATIONS
Max. average forward current

'FM(AV

(surge)

(1

phase

operation)

Tc =

V RM

Max.

1N3260-75

1N3289-96

JEDECTYPE

(C>
repetitive

peak

AIM

A187

160

150

150

130

125

143

110

A177A

1N3261

A180A

A187A

A180B

A187B

A180C

A187C

A70

A170

A177

100

100

100

130

130

A170A

reverse voltage (V)

1N3260

50

A70A

100

1N3262

150

A70B

200

A170B

1N3289

A177B

1N3264

250

A70C

300

1N3290

A170C

A177C

A170D

A177D

1N3267

A180D

A187D

A70O

400

1N3291

500

A70E
1N3292

A170E

A177E

N3268

A180E

A187E

A70M

A170M

A177M

1N3269

A180M

A187M

A170S

A177S

1N3270

A180S

A187S

A170N

A177N

1N3271

A180N

A187N

A170T

A177T

1N3272

A180T

A187T

A170P

A177P

1N3273

A180P

A187P

A1 70PA

A177PA

600

1N3293

700

A 70S
A70N

800

N3294
A70T
A70P
1N3295
A70PA
A70PB
1N3296

900
1000

1100
1200

A177PC

A180PC

A187PC

A170PD

1N3275

1500

A1 70PE

A177PD
A177PE

A180PD
A180PE

A187PD
A187PE

2500

2500

2000

3400

2800

28,000

23,500

Max. non-repetitive for 8.3 msec (A 2

FM

sec)

1600
10,000

Operating junction temperature range (C) -40 to +200

-40 to

+200

-40 to

Storage temperature range (C)

Max. thermal resistance, junction-to-case

<C/W)
Max. Peak forward voltage drop @
rated <f(aV) (1 phase operation)
@ TV (C)

-40 to

+200 -40
+200 -40

NO.

16,000

to

+175

to

+200 -55

-55 to
to

+190

46.000
-40 to +200

+190 -40

.3

to

-t

.3

.4

.4

1.15

1.3

1.3

1.6

1.3

25

130

25

125

143

127

127

127

128

127

.4

Max. reverse recovered charge, Tj - 25 C

PACKAGE OUTLINE

A187PB

A170PC

|2 t

*0JC

A177PB

A187PA

A180PB

1400

(surge)

stg

A170PB

A180PA
1N3274

1300

Max. peak one cycle, non-recurrent surge

current (60 Hz sine wave, 1 phase operation) @ max. rated load conditions (A)

1N3265

1N3266

350

fm

1N3263

+175

-40 to +200
.3

30

25

134

200

33,000
-40 to

127

.,'

RECTIFIERS
250 TO 740 AMPERES

182

1N4044-56

A197

A390

A397

A500

250

260

275

400

400

740

130

110

120

145

110

too

A397A
A397B
A397C
A397D
A397E
A397M

i^^Si-^
-

1IM3735-44

A190

250

.144

JEDEC
GE TYPE

109.1

SPECIFICATIONS
Max. average forward current

'FM(AV) operation) (A)

T c = <C)
^FM(rep) Max.

repetitive

(1

phase

peak reverse voltage (V)

100

A190A

1N3735

A187A?

1N4045

200

Atgotf

1N3738

A1S3&
A18J6

1N4050

N3739

600

A190C
AfdOD
A190E
A1S0M

A1971
A1S7&

1N4047

300

N3736
1N3737

1N3740

aWtm"

700

,At90&

800

AiSQN'

1N3741

AiaM-

1N4054

900

At$0T

A197T

1N4055

1N3742

At Ira*-

1N4056

400
500

1000

''.

"

.=

AtiSQj*'--

M8D>A

1100

L;

1200

....

AtdQPf-

;
-

1300

sA190PC/

1400

A1WiO.
Aiaopi

'"

1500

:.

1600

r =-.'.'"

.'

1700

_.

..'*."'''

1800

'

1900

2000

:*-'"'

2100

''

.;.r'--""'-'

2200

'-v

">

*;.'.',.'.'

2300

i-:-'"..''

'

2400

'

'-..'"

.-*

2500

;~A

2600

'".>.,

'

2700

'it'

','.

2800
2900

3000
.

FM

(surge)
l

2t

..

1N4051
'

1N4052

1N4053

A39QS
A380N
A390T
A390P

A1&7PA
A1S7PE

1N3743

A19?JPG

'

A390PC
A390PD
A39QPE

A193PS;'
.-.';.,.
-.;'"

-;^v"v.'
!

r-,>/

'..'?;.'>,'..

'^

.."W* *--.

..

A390PA
A390PB

1N3744

A397N
A397T
A397P
A397PA
A397PB
A397PC
A397PD
A397PE

Z.

.-

r-,.

'.

'

'

.-.

,*'

.^4

^_

'

"

'-/-

*
^^Kf
-

'

asoops
A50QPN

A500PT
A500L
A600LA
A500LB
A600LC

"aSOOLD

A800LE
AS00LM

-,'/

'$.'.

_A500PM_

*-

'i-.a^Sf
^.SOMMiS^"

A397S

'.*?"

'

iS^Mm

"

'.

.'.ASOOLS

AS00LN
A50OLT
A500U

5000

10,000

"

Max. peak one cycle, non-recurrent surge

current (60
t j on )

@ max

sine wave, 1 phase operarated load conditions (A)

Max. non-repetitive for 8.3 msec (A 2

sec)

Operating junction temperature range (C)

T stg
_
0JC

Storage temperature range (C)

Max. peak forward voltage drop

'F(AV) t 1 Phase operation)
@ T c = (C)

Max. thermal
(

C/W

-6860"

Hz
.

Tj

FM

.-

1N4049

A1.81S

...

A390A
A390B
A390C
A3900
A390E
A390M

;'-.

1%(K)0

-4btQt^)6
^40tb*200

resistance, junction-to-case

.18

',

4500

500O

5000

84,000

1Q9iQQQ.

100,000

-40 to

+200 -40tt>>176 -65

-40 to

+200

to

-65 to

.18

7000

95,000
200J00O
+190 40 to +200 -40 to +175

+200

40 to +200

-40 to

+200

415JW0
-40. to

+175

bbbb

.18

.15

.095

.087

rated
.-'

1.3'-:.

1.3

1.35

1.15

1.25

1;25

144-MV

130

120

25

25

60

128

109;l

109.1

'

Q rr
Max. reverse recovered
PACKAGE NO.

charge

@ Tj = 25C

'rr

t28

128

135

WJiT''"

'*.
-

'..'.

~
..

-its.

RECTIFIERS
TO 1500 AMPERES

750
GE TYPE
JEDEC

183

A437

A596

A430

A540

A696

A570

A640

1000

1000

iooo

1500

100

SPECIFICATIONS
Max. average forward current

'FM(AV)

(1

phase operation)

@ T c = (C)
v FM(rep) Max repetitive
-

'...'

(A)

780%l>'

750

'\-WMl

126

65

V'J'flfogi'**

'

200

A43B#i

300

'-

400
500

.'

a43?'e:\;

600

'.A437"lj?^

700

A43Js|%

800

A437$!*

'

1000

'

,A43irjC:

1100

'MZ&&-:..

..

1200

".

1300

1400

A437f?g'.''

MiM''-

'"

1500

;A437|ft'-'

M39H.'S

'

1600

"

1700

_-"Z*;ty.\,

,"

1800
1900

.-V..<^;,.

':' '..-;'";;

2000

'

L -'''"^''

.'

2100

.r-.tf-V.

2200

'

-'..

2300

2400

-*..

"."..,

2500
2600

,-

2700

/.

-.

;-

-.':
--.

2800
2900
:.

,.\

3000

FM

Max. peak one cycle, non-recurrent surge

current (60 Hz sine wave, 1 phase operat on ) @ max ratecj (oaj conditions (A)
j

2t

80

80

10,000

A430A
A430B
A430C
A430D
A4306
A43QM
A430S
A430N
A43GT
A430P
A430PA
A430P8
A430PC
A430P0
A430PE

j
I

A640P
A640PA
A640PB

-*

"

A696P6
j

-"

A696PM
"A896PS"
A696PM

'

Max. non-repetitive for 8.3 msec (A 2

sec)

Tj

T stg

Storage temperature range (C)

n
9JC

Max. thermal resistance, junction-to-case

( c /w)
Max. peak forward voltage drop @ rated
'f(AV) C Phase operation)

@ T c = <C)
Q rr
Max. reverse recovered
PACKAGE NO.

:ij*l5flQ

A540L
A540LA
A540LB
A540LC
A540LD

A696t

A696PT

;'.

r-

/-_,

"

A640PC
A640PD
A640PE
A640PM

A640PS

AS40PM
A640PT
A640L

-'

:-*'

''';

12,000

'..-ao.'jci

illiiiiilii

+200

-40 to
:

T.y J0%?.^-- ::.

4*000

r'

18,000

16.000

.057
2.3

,300,000

1,062,000

40 tp +200

-40 to

+200 -40 to +200

-4oto+aoo

-40 to

+200 -40 to +150

-40 to

+200

'"

i:

300
:

'^.,1 83-'

di|ftf;

25

182

136

.036

1.15

lll*''-

''*jSfe.

.'

'

40:to

+200

.057

.045

1.0

to

25

25

50t>

"

182

183

182

150

''

"

.057
:

125

-'-as

+200

'"

@ Tj = 25C

597,000
-40 to

v.

charge

*Y75,

41 5,000

-40 to +175

'

"

--

io,ooo

\
I

'.

10,000

-<

>-

^.'

'

".-

A570A
A570B
A570C
A570D
A570E
A570M

'^-*

Operating junction temperature range (Cl

v FM

A596N
A596T
A596P
A596PA
A596PB
A596PC
A596PD

; M3TS$>:;

900

(surge)

1500

iftliHsBHHiHBS

peak reverse voltage (V)

100

I.-'

;is3

PHASE CONTROL SCR's SELECTOR GUIDE

1200

CD
ID

cm

1000

f-

CM

CM

t-

CM

CM

600

f>

CM

CM

CM

01

z
CM

CO

CM

IO

CM

CM

91
0>
1

200

o
CM

]
ro

0.5

K>

in
to
CJ

<0
CJ

0.8

o
o

in

f-

O
o

CO

o
u

in

2
o

IO -

CM
1

CM
CM

O
CM
CM

10
CM

s
z

CM

CM
1

o
n
CM
u

CM

IS
to

10
i

S5
CM

N.

IO
1

o
rco

in
01
1

CO
CM
CM

CO
IO

z
CM

(J

IS

CO

IS
en
CO
to

CM
01

2 400

IO

<
o

r-

in

CM -

*
CO
z

800

360-64

*
o
CM

o
in

CM

1.6

LOW
CURRENT

7.4

10

25

16

35

_ MEDIUM
CURRENT

2600

2400
2200

2000
co

1800

1600

1400

in
<3

iooo

1200

800
600

400
200
100

63

80

no

180

235

300 380 500

850

940

1100

1400

19502400

HIGH

CURRENT
RMS CURRENT RATINGS-AMPERES

"Phase Control"

is a term used to describe SCR's where fast turn-off time is not a prime requirement. The trade-offs
design are such that turn-off time has an inverse relationship to current and voltage capability for any given
junction size. Primary applications for a device with relatively slow turn-off are AC phase control hence the name
"Phase Control." This type of device is also used for zero voltage switching and select pulse applications. See
pages 36-41.

in

SCR

137

PHASE CONTROL SCR's

228

.5

for fusing for

>

30-200

30-400

05

0.8

08

0.32

0.50
@ 25 C

(A)

88'C

HHB

surge current (A)

z

C7

30-200

Max. average on-state current @ 180

conduction IAI % T c
Max. peak one cycle, non-repetitive
I

AMPERES

2N5060-64 2N2322-29

2N877-81'"

VOLTAGE RANGE
FORWARD CONDUCTION
't(RMS) Max. RMS on-state current

Max.

C3

GE TYPE
JEDEC
ELECTRICAL SPECIFICATIONS

'T(AV)

TO

1.5 msec

25-400

25C

!>

25C, 18

conduction, rated l-r(AV) AY)

Max. internal thermal resistance, dc
(C/WI

"ej.

,.~

0.5

hhR

1.5

B0

10

4.0

4.0

2.5

2.6

.':

30C

e>

30

15

0.5

10

5.0

3.75

30 C

20

IS

1.4

2.2

75

25

10

15

1.0

1.0

'' !85'C

85 C

(A'secl

Max. peak on-state voltage

1MS0,'
1.6

1.0
19

2N1595-99.A

2!
2S-400

1.6

50

2N2344-48

0-S

2.2

2.S

1.35

10

10

to

40

40

40

100

100

100

SO

50

Max. holding current

@ 25 C

Typical turn-off time

1/isec)

Maximum
td

tr

^/^.
d,/d,

&

rate-of-rise of

max. Tj

turn-off time (psec

Typical turn-on time (Msec

Max.

ImA]

15

15

Hhh

40

sttJ

20

1.4

1.4

1.4

110'CI

110C)

1.4

turned-on current

50

IA/Msecl

Junction operating temperature range

C)

-66 to

BLOCKING

25

-65

tc-

'.T

l?5

-65 to 125

-65

'

50

vti
-4010 125

125

-65

100

..

-40

110

'

JO

-40

to

110

Typical critical rate-of-rise of off-state

voltage, exponential to rated V D
@ max. rated Tj (V/usec)

rm

FIRING
Max. required gate current to

trigger (mAI

@-65C

300

500

HhP
200
Max. required gate voltage to trigger (V)

@ -65

500

350

PJMM
200

isi

200

200

HiiiHai

,H"
500

~<*"o

1000

500

200

.*
it-

0.8

as

0.8

Q.8

Min. required gate voltage to trigger (V)

S>

110C

0.6

0.8

0.2

0.2

CI07O1""

C108QI

VOLTAGE TYPES
Repetitive Peak Forward and Reverse Voltages

)6Ql

2N2322

C5U

C6U

2N2323'
C5F

C6F

2N234S

2N16B5.A

C106F1

3M2346

2NtSS8,A

C106A1

CBG

2N2347

C68

2M2348

2NB860
C203Y

2N877

6YI

2N878

C103W

gjgjgf

2NB79

C1

03A

2N6062
C2Q3A
2N6063

2IMB80

2N881

03B

2N50B4
C203B

C203C

C2030

2N2324C 5A

2N2326*
C 5B
2N2327
C5H
2N2328-

C5C
2N2329"

C5D

C6C

JAN & JANTX types

I.

3.

2N885-89

available

2N2322A-28A

NO.

112

1-.1.228

20

mA

available

20

max.

mA

Iq-j-.

max.

138

C108AI

C108B1

CI 0781

2N1588.

)6C1

C707CI

2N1S99,A

)6D1
.

C107O1

C108D1

C107E1

"C108E1

C108M1

C107M1
!

available.

C107A1

CI06B1

I73

263

C108F1

36M1

600

CI08Y1

2N1B97,

J6E1

PACKAGE OUTLINE

'

C10JY1
CT07F1-.'

173

'

173

PHASE

CONTROL

104

7.4

GE TYPE

C10
2N1770A-

JEOEC

SCR's

TO 25 AMPERES

C11

77A

2N1770-78

25 400

25-600

CIS

C116

C220-2

C126

C36

2N 1842-50

ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
'TIRMS) Max. RMS on-state
i

T
T(AVI
.

'TSM

7.4

4.7

4.7

106C

>

60

surge current (A)

for fusing for

>

1.5

conduction, rated

(V)

T A y)

@ 25C

>

5.1

5.1

50"

60

60

1.8

1.85

3.1

3.1

25 600

25-600

25-600

7.8

10.0

16.0

@35C

@36'C]

16
5.2

40C
90

78^C

6.3

@68C

td

tr

di/dt

78 C

80

120

2.2

1.82

40

1.8

ImAI

25

2.25

2.0

30

30

30

30

Typical turn-off time (msec)

@
@

25-800

25C, 180

Max. internal thermal resistance, dc,

junction-to-case (C/W)

Max. holding current

105C

50-600

msec (A 2 seclj

Max. peak on-state voltage

(

"9JC

7.4

Max. average on-state current @ 180

conduction (A) @ T c (C)
Max. peak one cycle, non-repetitive
Max.

I't

currant (A)

25 BOO

100C

2.5

1.0

20

10

50

125C

40

Typical turn-on time

Max.

rate-of-rise
(A/jusec)

40

IB

(jusec)

1.0

1.0

turned-on current

60

Junction operating temperature range (C)

-65

to

40
1

50

65

in

40
125

30

I-B51O105

-40

io

20
110

-40

to 100

-40

io

100

BLOCKING

-40

to 110

-40

to 100

-40

105

to

Typical critical rate-of-rise of off-state

dv/dt

voltage. Exponential

max. rated T

20

50

30

30

IV//ec)

50

100

100

FIRING
'gt

Vgt

Vgt

Max. required gate current to trigger ImAI

-65 C
@ -40 C
@ 25 C

15

Max. required gate voltage

-65 C

<s>

-40C

25C

to trigger (V)

40

15

38 J

^^ist

2.5

1.35

1.35

25

25

."

40

''!

~^lil
150

80

1B0
">

Siilr

Min. required gate voltage to trigger (V)

2_

100C

'^^^Si

110C

125C
150C
VOLTAGE TYPES

3.5

3.5

'-1JT
0.3

0.2

0.2S

0.3

0.2

Repetitive Peak Forward

~4

and Reverse Voltages

2N1 770A

25

C10U
2N1771A
C10F
~~

100

"2N1772A

C10A
2M1773A
C108

2M774A
crt

CTOM

2M776A
C10C
C10D
500

2N1770
C11U
2N1771
C11F

2N1772
C11A
2N1773
CI1G
2M1774
C11B
2N1775
C11H
2N1776
C11C
2N1777
C11D
2N1778

CUE

2N2619

C11M

C220U
C222U

C15U
'

CW

C15A

C116F1

C122F
C123F

C116A1

CI 22 A

C116B1

2N1842

C36U
C126F

C123A

C220A
C222A

C126A

CI 228
C123B

C220B
C222B

C126B

C222C

C126C

C222D
C220E
C222E

"CtSKt'i

CfM
ctse

C15H

CISC

C116C1

C122D

C15D

C156

C122C

gay; J

C116E1

C122E

JsSHLi
C122M
C123M

C15M

C220M
C222M

C126E

C126M

2N1843
C36F
2N1844

C36A
2N1845
C36G
2N1846
C36B
2N1847
C36H
2N1848
C36C
2N1849
C36D
2N1850
C36E

C37U
C37F

C17A

C378

C37C

C37E

C37M

700

C37S
800

PACKAGE OUTLINE

NO.

C37N
104

104

173

iTtLitrMii 241 (C222)

Ila? ci23 "*ii!

ft6(C220)

*C123

isolated version of

C122.

139

230.2

M
i

PHASE

CONTROL
SCR's

TO 35 AMPERES

25

C38

C231-3

GE TYPE

2N3870-3
2N3896-9

2N681-92*

JEDEC

ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
't(RMS) Max. RMS on-state
'T(AV)

25-800

25600

25

25

16

16

current (A)

Max. average on-state current @ 180

conduction (A) <s> T c I'CI
Max. peak one cycle, non-repetitive

dot J

surge current (A)

2

Max. t
(A 1 sec)
I

Vtm
"ejc

for fusing for

>

1.5 msec.

Peak on-state voltage @ 25 C, 180

conduction, rated 1-rlAVl
Max. internal thermal resistance, dc,
junction-to-case (C/W)

Max. holding current

t_ + t r

rate-of-rise

1.5

"

25-700

25-500

600 1200

600-1200

350

260

1.85
1.0

1.0

50

at rated

Typical turn-on time (usee)

Max.

260

__________
100

25C ImAl

Typicar turn-off time (Msec)

Tj (max.)

/5

20

50 600

300

150

100-600

@ 7oc

65 C

26-600
2

turned-on current

20

80

(A/usec)

Junction operating temperature range

-6Rlo 126

C)

-40

In

100

-4

BLOCKING
Typical

critical rate-of-rise of off-state

voltage. Exponential

max. rated

20

100

50

Tj (V/Msecl

FIRING

GT

80

Max. required gate current to trigger ImA)

_>

_65C

Vgt

Max. required gate voltage to trigger (Vi

@ -65 C

40

25

30

25

Min. required gate voltage to trigger

V GT

~@

100C
125C

30

1.5

^^^B

0.2

-44j

'.ft'i..-

2.0

3.0

It*.

Mi

150C

40
3

3.0
3.0

3.0

3.0

0.2

0.26

0.25

40

3.0

2.0

80

;89p

20

40

-40 C

0.15

VOLTAGE TYPES
Repetitive Peak Forward and Reverse Voltages

25

2N681

C230/2U

2N682-

C230/2F
/3 A

2N683*

C230/2A

7N684

2N685'

C230/2B

2N686*

2N68i"

C230/2C

C231/3C

2N688*

C230/2D

C231/3D

2N689-

C230/2E

jyzaiy'aE

C231

3870
3896

C228/9A

C35A

j____
C38F

C38A
'_esit6_*i

C231 /3B

C231/3M

3871

3897

3872
3898

C228/9B

C38B

C22BOC

C38H
C38C

C228/90

C35D

3873
3899

C380
C38E

C228/9E

C137M

C228/9M

C230/2M

2N691

2N692

2N5205

C137N

2N5206

'<&?$<

C137S

C137T

C137PA
C137PB

IIlHiHIl

241 (C232) 241 (CZ33)

2,3,4,9
(C230) 8 6 (C23I)

8,3,4,5
ft

'JAN & JANTX types

C35U
C35F

2N690

BBS!
PACKAGE OUTLINE NO.

C228/9F

C228/9U

{*ffct$w

available.

L
140

251 (C229)

2,3,4,8
B 6 <C228>

107

107

PHASE CONTROL SCR's

63

GE TYPE

TO

190

108.1

AMPERES

C4S, 46

CBO, 52

CI 50, 152

C60, 62

2N 1909- 16
2N 1792-98

JEDEC

2N 2023-30

ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
IT RMS) Max. RMS on-state current
(

It(av)
i

T",.,
AV)

Itsm
|2t

Vtm
R0JC

'""

(A)

Max. average on-state current @ 180

conduction (A) @ Tc
Max. average on-state current for 3a
conduction (A) @ T C

Max. peak one

@ 87<"C
@90C

500-1300

?80C

6SC

87C

500-1300

,U0
70

110

88C

@90C

70

ff62C
62

4150

25-500

70

''fpj

59
68

69
90C

95
<5>

1000

'i

4150

85C

1600

7000

10,600

it

1.8

internal thermal resistance, dc,

junction-to-case (C/W)

Typical turn-off time l/^sec)

80

Typical turn-on time (/isec)

di/dt

@>

40
102C
36
101C

800

2 t for fusing for

5 to 8.3 msec
(A2 sec)
Peak on-state voltage @ 125C, 180
conduction rated It (AV) (V)

Max.

32

cycle, non-repetitive surge

25-1200

'fx^

35

current (A)

Max.

25-1200

25-1200

80
6

323

Rate-of-rise turned-on current (A/ jLtsec)

Junction operating temperature range (C)

100

40 to

100
-,

25 C

40

to

30
25C

-40 to125C

-40

to

25C

-6b

200
-40

b0C

to 1

to

125C

BLOCKING
Min.
dv/dt

critical rate-of-rise

voltage, exponential
(V/iUsec)

of off-stage

max. rated Tj

200

30 TYP.

FIRING
Max. required gate current

@ -40C

to trigger

ImAI

130

126

@125C

Vgt
Vgt

40

Max. required gate voltage to trigger (V)

@ -40C
Min. required gate voltage to trigger (V)

@ -40C
VOLTAGE TYPES

3.0

.25

Repetitive Peak Forward and Reverse Voltages

25

2N1909

<J4SU

C46U

.Jgjj|t

C45F
C46F

C45A
C46A
C45G
C46G

C147G

C45M
C46M

C50M
CS2M

C150M
C152M

C45S
C46S

ceos
,

01 SOS

(MSN
C46N

C50M
C52N

C45T
C46T
C45P
C46P
C46PA
C46PA
C45PB
C46PB

C50T

C152N
C150T

CB0P

CI SOP

C45C

C45D
C46D

Vi"

PACKAGE OUTLINE NO.

108. 109

CONSULT
FACTORY

.-^sMdiWs-".'

C62B
2N2028

2IM2029

C62C
2N2030

C620
C150E
C152E

C80F.

C350E

C62E

C350M
C350S

C152S
C150N

C350N

-'i-4'.y;^

C350T

C152T

C50PA
C52PA
C147PB

STUD

PACKAGE TYPE

2N2025
C62A
2N2026

^N1912i

C45E
C46E

C45H
C46H

2M1794
2N1913
2N1795
2N1914
2N1796
2N1915
2M1797
2N1916
2M1798
CSOE
C52E

C45B
C46B

600

C62U
2N2024

2N1910
2N1792
2N1911
2N17B3

^cowe
C52PB

C350P

C350PA

__,

C350PB
1,^,,,.

C350PC

STUD

%" STUD

M" STUD

t09. 108

109, 108

109. 108

*"

141

C152P
C150PA
C1 52PA
C1 50PB
C152PB
<;1 50PC
C152PC

V,"

PRESS PAK
280

PHASE CONTROL SCR's

235

C380

C390

500-1300

100-1300

500-1300

'T(AV)

tsm

conduction (A)

@ Tc

Max. 2 t for fusing for 5 to 8.3 msec

(A 2 seel
Peak on-state voltage @ 1 25"C, 180"

R 0JC

conduction, rated l-r(AV) v

Max. internal thermal resistance, dc,
Junction-to-Case <C/W)

Typical turn-off time

'

td

di/dt

Tj

C502

850
550

850
550

850
550

@65 C C

@67 C C

@67C

525
70C

@70C

180

80C

@80C

@65C

@57C

3500

3500

8000

8000

8000

8000

50,000

50,000

265.000

265,000

265,000

265,000

1.8

1.75

1.9

.095

.06

.06

250

250

125

200

200

500

<>88C

l2
1

C501

135

180

Max. average on-state current for 3j,

conduction (A) @ T c
Max. peak one cycle, non-repetitive surge
current (Al

C391

850
550
ea65 C
500

235
150

Current (A)

Max. average on-state current

'T(AV)

AMPERES

850

C180

GE TYPE
ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
't(RMS) Max. RMS On-State

TO

380
235
80c

550
<3>

525

1.9

'

(/isec)

Typical turn-on time (msbc)

Rate-of-rise turned-on current (A/msccI

Junction operating temperature range {CI

-40

to

-40

125-C

to

25C

40tol25C

-40

.05

.05

200

30U

125

1.5

1.5

1.5

150

30-75

to

125C

40

10

125 a C

100

-40

to

25C

BLOCKING
Min.
dv/dt

critical rate-of-rise of off -state

voltage, exponential

max. rated

200

200

200

200

200

500

200

200

300

300

225

275

125

125

75

50
4.5

Tj (V/Msecl

FIRING
Max. required gate current
, T

@
..

V GT
.,

V GT

to trigger

ImAI

9 -40C

<s>

125

125

125C

Max. required gate voltage to

trigger (V)

_ 40c

Min. required gate voltage to trigger (V)

@ 1 25 C
VOLTAGE TYPES

.18

llllliliilliiii

6.5

.15

.35

.15

tiiijfliiRii

.3

Repetitive Peak Forward and Reverse Voltages

C380A
C380B
C380C
C380D
C380E
C380M
C380S
C380N
C380T
C380P
C380PA
C380PB
C380PC

100

200
300

CONSULT
FACTORY

400

500

C180E

600

C180M

700

C180S

800
900

C180N
C180T

1000

C180P

1100

C180PA

1200

C180PB

1300

C180PC

CONSULT
FACTORY

CONSULT
FACTORY
C390E

C390M
C390S

C501S

C390N

C501N

C390T

C501T
C501P

C390P

C390PA
C390PB
C390PC

C501PA
C501PB
C391 PC

C501 PC

1400

C391PD

1500

C391PE

1600

C391PM

C501PD
C501PE
C501PM
C501PS

1700

C391PS

1800

C391PN

C502PM
C502PS

K" STUD

%" PRESS PA K

PRESS PAK

PRESS PAK

PRESS PAK

C502PN
C502PT
C502L
PRESS PAK

110

280

276

276

185

185

1900
2000

PACKAGE TYPE
PACKAGE OUTLINE NO.

C502PE

H2

PHASE CONTROL SCR's

276

TO 1950 AMPERES

940

GE TYPE
ELECTRICAL SPECIFICATIONS

C601

VOLTAGE RANGE
FORWARD CONDUCTION

1700-2600

C440

1100-2000

1200-1800

T1RMS)
't(av)
.

T(AV)

500 1300

1100-2000

1400

1950

800

1250

1100
Max. average on-state current @ 180
9 Tc
Max. average on-state current for 3a
conduction (A) T c
Max. peak one cycle, non-repetitive

700

72* (

eosc

610

57S

80 1

6> 80'*

75 C

650

70'

1250
<s>

70 C

1040

@80C

80 C

#80"C

11,000

11,000

3,000

18.000

415.000

516.000

500,000

30,000

1.300.000

1950
"

1040

10.000

ff

surge current (A)

Max.

600

conduction (A)

2000-2400

5,000

t for fusing for 5 to 8.3 msec

(A 2 sec)
Peak on-state voltage @ 12SC, 180
conduction, rated 1-rfAV) (V)
I

933,000

Vtk
R 0JC

di/dt

Max.

internal thermal resistance,

1.5

1.5

1.3

|HHH

2.0

.04

.025

.023

125

125

125

1.5

1.5

800

100

125

dc
.036

.041

.04

Typical turn-off time (Msec)

126

175

125

Typical turn-on time <M*ec)

1.5

1.5

35-75

80-150

ju net ion-to-case

(C/W)

Rate-of-rise turned-on current (A/jusee

40to12SC -40 to 1 25

Junction operating temperature range (C)

~6
160

40 o125C -40rol25C -40to125C

C -401
-40tol2S*C

BLOCKING
Min.
dv/dt

critical rate-of-rise

voltage. Exponential

of off-state
rated T

200

200

200

200

200

275

275

3>W

300

275

75

125

125

j0

35

4.5

5.5

4.5

.2

flflHal

.3

(V/M$ec)

FIRING
Max. required gate current to

@
@
w
V

GT

w
V

GT

(mA)l

275

125C

Max. required gate voltage to

,

trigger

-40 C

trigger (V)

_4QC

Min. required gate voltage to trigger (V)

@ 12 5C
VOLTAGE TYPES

Repetitive Peak Forward and Reverse Voltage:

Mli

500

C440E

C440M
C440S
800

C440N
C440T

1000

COtUPS

C602PN
C802PT
C8Q21
C802LA

2600

PACKAGE TYPE
PACKAGE OUTLINE NO.

C440P

C440PA
C440PB

C441PB
G441PC

1300

2200

C602L6
C802LC
C602U0
C802LE
C602LM
PRESS PAK

=iESS PAI

276

276

143

C440PC

C701PA
C701PB
C701PC
C701PD
C701PE

C441P0
C441PE
C441PM

C701PM

C441PS
C441PN

C701PS
C701PN

C701PT

C701L

C702L
C702LA
C702LB
C702LC
C702LD

BESS PAK
276

RESSPAK PRESSPAK PRESSPAK

'fib

276

276.1

INVERTER SCR's SELECTOR GUIDE

2000
1900
1800
1700
1600
1500

1400
1300
v>

i,

1200
1100

1000

a.

g 900
4
O 800
700

600
500

400
300
200
100

25

35

63

no

225

275
300 400 500 700 800 850 900 1000
RMS CURRENT-AMPERES

1150

1500

charSCR's in this use category are characterized for turn-off time (commutation speed) capability and other speed
large matrix
acteristics When designing for speed, the parameter trade offs must be carefully weighed. Thus the
for these devices
of speed, current and voltage capability for inverter SCR's. As the name implies, major applications
requiring high
are DC/AC inverters. Additionally, they are used in cycloconverters and other pulse applications
speed capability.

144

INVERTER SCR's
TO 35 AMPERES

25
GE TYPE
JEDEC
ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
Max. RMS on-state
It,-,,..
'T(RMS)

current

50%duty (A)
1 KHz
5 KHz
10 KHz

65C,

C234, C235

@ TVC

-.#<M0

500-800

tsm
2.1

,V:jfc,-

26

' <'.'"**;>.

2N3654-58

50-400

$HffH>

Max.

2 t for fusing

''",

< 1.5 msec.

V'S6

yt:

&-

t<:i-~.ilk.

18

Mft

'

(A^Sec.)

'

200

500-800

35

BlSIII

35

26

flHfflffll

35

26

'-y:ifr

iliiiiiilli

20

';&$$?"':'

165

J2-''

Vr'^lNfe

32

30

pipiiliill

200

IlSlBlll

165

|llj||gjj

200
165
I

&*

'

1.0

ffmpj

1-7

1.0

.-"?i'

Max. turn-off time @ rated voltage and

Tj (Msec) @ 20V/MS6C reapplied

@ 200v7jusec

reapplied

/r^i'i

10

'

'

Junction operating temperature range (C

3.1

!-:$&:\/

Critical rate-of-rise of on-state current

(A/Msec)

4*

-40^100 -65 to

Illllll

3.1

llillillii

15

iiiiiiiiiii

15

400

Iliiiiiil

100

3.1

'

~<-

swm,'<
v

100

:>

':

".'v-3.-1' ; :"

'.

rAiar.

.-.

i^'ifeias" -65

2E>

to

BLOCKING
dv/dt

C144

Max. peak one cycle, non-repetitive

surge current (A)

Typical turn-on time (usee)

Tj

C141

2N3649-53

td + *r

di/dt

22

Max. internal thermal resistance, dc,

junction-to-case (C/W)

C140

-iiw^Kro

35

'''frC''

R ejc

C139

C138 (1)

Min. critical rate-of-rise of off-state

voltage exponential to rated Vr>nM
@ Max. rated T j (V/msoc)

V-vaa-:-..

200

";^2$Cr.'

'-

500

..ffijBOQ .-

25

Hi||

-65

to

,'.

200

llijillilBi

200

'A-

500

Hiiiiiii

450

^^K^^S^B

25

FIRING

GT

Max. required gate current to

trigger

@ -65C
@ -40C
@ 25C

ImA)

''M

'

w
V

GT

Max. required voltage to

'I

'Ho.

v GT

."_
.

180

"-T ..i/

'
'

'^iscp-

180

4.5

trigger (V)

@-65C
@ -40C
@ 25C

4.5

-r

1,5

3.0

0-2
.

-;

.>>V:v.

Min. required voltage to trigger (V)

@ 1Q0C
@ 125C
VOLTAGE TYPES

'..'

"iV.^SCl

/3%i4!v,

"

..

":

0.25

3 -0

:.J8S-"-.

0.25

4.0

llililplllll

ie;ani=a

2.5

;~yiiir.O/''

'

0.25

.03

~
fc-j--

*'>fo>y.-..

C234F
C23F
C234A

50
100

C140F
2N3649
C140A
2N3650
C140B
2N3651
C140C
2N3652
C140D
2N3653

C23.6A
200

c34B

300

'fe234C

casNiB

C23SC
C234D
C23SD
C234E

400
500

C23B4EL

C2S34W'

600

C23fflvT>

700

800

PACKAGE OUTLINE NO.

j -&4*F.:'
1 ^inw'"'

1
1 '2N^B56S
1 :ct4ie v
1 2N3SB

"

'

-'

'.

I
1

C138E10
C138E20

C144E15
C144E30

C138M10
C138M20

l3klQ

C138S10
C138S20

^clpp'o"--"''
<*3SiS20

C144S15
C144S30

C138N10
C138N20

c$!$ft30

C144N15
C144N30

'

C144M15
C144M30

M MS889I
I

*W234>
1

150

iliiBiii

'.'.

HiiB

( " V
RRM=50V

145

107

'.'107

107

~^wk-

!".''

107

INVERTER SCR's
63

GE TYPE

CONSTRUCTION

TO 270 AMPERES

C48/C148

C49/C149

ALL

ALL

C1S4. 1S6

C164, 165

CI 58, 159

C155, 157

AMPLIFYING AMPLIFYING AMPLIFYING

GATE

GATE

GATE

DIFFUSED DIFFUSED

ELECTRICAL SPECIFICATIONS

i
IT

e\
RMS)

1200 Hz

l-

cycle, non-repetitive

100-600

100400

GATE

500-1200

|2t for fusing for

Tj

Vr

50V

225

250

225

226

225

150

175

1800

1600

13,200

10,500

110/63

110'63

110

110/63

110 63

110

110

110/63

H063

110

110

110

90

no

110 63

1000

1800

1800

13 200

13,200

10,600

J5

~~!3

35

30,40

10,15

10

20

SO

20. 25

20

100

1UU

rated voltage and

min. (Msec)

20V/^sec reapplied

100V//Ltsec re applied

40,

Critical rate-of-rise of on-state

100
;,

.135

25

30

<10, 15

36

<10, 15
10,20

600

current (A/ Msec)

Junction operating temperature range (C)

13,500

.13

~~

16

200V/jUsec reapplied

140

4160

(^(sec)

@>

270

700

Max. thermal Impedance (C)

Turn-off time

110

2000

5 to 8.3 msec

(A2sec)

Typical turn-on time

10

1600

surge current (A)

Max.

110/63

110

110/63

Max. peak one

di/dt

GATE

td + tr

GATE

Max forward conduction sinusoidal

@ Tc _ 65 o C 50% du , y (A)
11.,

R0JC

500-1200

100-600

600-1200

VOLTAGE RANGE
FORWARD CONDUCTION

C354. 355

AMPLIFYING AMPLIFYING AMPLIFYING

-40io 126 C
<>

Qj

HHhI

35

15,25
20.

40
500

100

'

^-V^"*

30

"^

'

BLOCKING
Critical rate-of-rise off-state

dv/dt

voltage exponential to rated

@ Max. T

Vdrm

200

200

200

300

300

200

120

120

120

200

200

200

200

300

200

300

120

126

120

125

(V/^secl

FIRING
Max. required gate current to trigger (mA)

IGT

@ -40C

VGT

Max. required voltage to

@ _4f)oq

@125C

trigger (VI

(Min.)

3
.15

.15

:.16

mHbb

.16

.15

5
.15

VOLTAGE TYPES
Repetitive Peak Forward and Reverse Voltages

C49A
C149A
C49G
C149G
C49B

100

CI 498

C49C
C149C
C49D
C149D
C49E
C149E

300
400

600

C48M
C148M

700

C48S
C148S

C49M
C149M

1200

C1S6E

C157E

C158E
C159E

C164B
CI 658
C164C
C165C
C164D
C165D
C164E
C165E

C1S4M
C166M

C155M
C157M

C158M
C159M

C164M
C165M

C158S
C159S

C165S

C358S

C1S8N
C159N
C158T
C169T

C165N

C358N

C157A
C155G
C157G
C155B
C157B
C155C
C157C
C155D
C157D
C155E

PACKAGE OUTLINE

C148N
C48T
C148T
C48P
C148P
C48PA
C148PA
C48PB
C14SPB
V/34" STUD

PACKAGE TYPE
NO.

109/108.1

C354A
Qf)6A
C354G
C356G
C3548
C355B
C354C
C366C
C3S4D
C35SD
~C364E
C356E
C345M
C355M

CI 55 A

C48IM

1000

C164A
C165A

C154A
C166A
C154G
C166G
C154B
C166B
C154C
C166C
C154D
C166D
C154E

109 108

109, 108

146

W STUDi

C358M

C358T

C158P
C159P

C358P

C168PA
C169PA

C358PA

cu

C358PB

C169PB

VIV STUDjfejlph

C358E

'/>"

STUD

14"

STUD

PRESS PAK

%"
PRESS PAK

280

280

INVERTER
275 TO 400

GETYPE
CONSTRUCTION

SCR's

AMPERES

C184/C185

C186

C364

AMPLIFYING

AMPLIFYING

GATE

GATE

AMPLIFYING

GATE

ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
(RMS

It

'tsm
|2t

100 800

@ T C = 65C, 50% duty

@ 60 Hz
@ 600 Hz
@ 1200 Hz
@ 2500 Hz
@ 5000 Hz

GATE

100-800

700-1200

Max. peak one

Typical turn-on time

Tj

Vr

@>

400

400

275

275

300

270

270

275

300

200

200

bpbbIb^Bh

235

140

140

3500

3500

1800

1800

3500

3500

50.000

50,000

13,500

13,500

50.000

50,000

.15

.15

.135

.135

.095

.095

^^j^^^pi

5 to 8.3 msec

td + tr

Turn-off time

275

27b

cycle, non-repetitive surge

|2t for fusing for

275

250
-

current (A)

Max.

300
190

Max. thermal impedance (C/W)

(jUsec)

rated voltage and

= 50 volts min.

(Alsec)

30

@ 20V//Jsec reapplied
@ lOOV/jUsec reapplied
@ 200V//Jsec reapplied

35
10-20

40

10

20

500

800

800

10-20

30

Critical rate-of-rise of on-state current

800

(A/jUsec)

Junction operating temperature range (C1

-40

to

25C

-40

to

25C

-^40 to

25C

--40 to

25C

800

-40

to

25C

BLOCKING
Min.
dv/dt

C386

AMPLIFYING

(A)

R0JC

Tj

C384/C385

max. forward conduction sinusoidal

'

(A2sec)

di/dt

C365

AMPLIFYING AMPLIFYING
GATE
GATE

500

-40

to

25C

critical rate-of-rise off-state

voltage exponential to rated

Max. Tj (V/Aisec)

Vdrm

200

200

500

500

500

300

400

250

250

i^p^^Bl
.15

200

200

400

500

300

175

175

250

250

l^^^BfB

^^^^^^P

.15

.15

.15

.15

.25

C364A

C365A

C384A/C385A

C364B
C364C

C365B
C365C

C384B/C385B

C364D
C364E

C365D
C365E

C364M

C365M

FIRING
'gt

Vg T

Max. required gate current to trigger ImAI

@ -40C
@ 125C

Max. required voltage to

@ -40C
@ 125C
VOLTAGE TYPES

trigger (V)

(Min.)

Repetitive Peak Forward and Reverse Voltages

100

C184A/C185A

150

C185G

200

C184B/C185B

300

C385G

500

C184C/C185C
C184D/C185D
C184E/C185E

600

C184M/'C185M

700

C185S

C186S

800

C1B5N

86N
C186T
C186P

C186PA
C186PB

400

900
1000
1100
1200

CI

C365S

C384C/C386C
C384D/C385D
C384E/C385E
C384M/C385M
C385S

C365N

C385N

C386S

C386N
C386T
C386P

C386PA
C386PB

1300

PACKAGE TYPE
PACKAGE OUTLINE NO.

K" STUD

%" STUD

110.1

110.1

147

1 V,"
|

PRESS PAK "PRESS PAK '//'PRESS PAK i" PR ESS PAK

280

280

280

280

1
1

INVERTER SCR's
500

GETYPE
CONSTRUCTION

TO 700 AMPERES

C387

C388

C397

C398

C392

C393

AMPLIFYING

AMPLIFYING

AMPLIFYING

AMPLIFYING

AMPLIFYING

AMPLIFYING

GATE

GATE

GATE

GATE

GATE

GATE

500-1200

500-1200

500-1200

500-1200

100-600

100-600

550

550

700

700

500

500

650

650

450

450

ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
I

Max. forward conduction sinusoidal

RMS)
T /q^c\
@ Tc - 6SC. 50% duty (A)
@ 60 Hz
(

@ 600 Hz

530

530

@
@
@

455

455

550

550

400

400

22b

225

2?6

275

210

210

120

150

150

145

145

7500

7500

5500

5500

230,000

230,000

100.009

100,000

1200 Hz

2500 Hz

120

5000 Hz

Max. peak one cycle, non-repetitive surge

ITSM

current (A)

RQjC

Max. |2t for fusing for 5 to 8.3 msec

(A2 sec)
Max. thermal impedance (C/W)

td +

Typical turn-on time

|2t

tr

@
@
@
di/dt

20,000

20,000
.06

.06

.06

.06

.06

30

20

40

30

10

15

reapplied

35

25

50

35

12

18

200V/jLtsec reapplied

40

30

60

40

14

20

800

800

800

Vr

= 50

(/Usee)

@ rated

voltage and
min. (/Usee)

20V//Ltsec reapplied

100V/ /usee

Critical rate-of-rise of on-state

500

500

800

-40 loH25C

-40to+125-C

-40to+125C

200

200

200

200

200

200

300

300

300

300

400

400

125

125

125

125

150

150

.16

.15

.15

.15

.15

.15

C393A
C393B
C393C
C393D
C393E
C393M

current (A//Jsec)

Junction operating temperature range PC)

Tj

.06

Turn-off time

Tj

5500

5500

-40to+12bC -40to+125C -40to+125C

BLOCKING
Min.
dv/dt

critical rate-of-rise off-state

voltage exponential to rated

@ Max. Tj (V//Usec)

Vdrm

Max. required gate current to

trigger

FIRING
IGT

ImAI

@>-40C

@125C

Vqt

Max. required voltage to trigger (V)

@-40C
@125C
VOLTAGE TYPES

(Min.)

Repetitive Peak Forward and Reverse Voltages

100

C392A

200

C392B

300
500

C387E

C388E

C397E

C398E

C392C
C392D
C392E

600

C387M

C388M

C397M

C398M

C392M

C387S
C387N
cssrr
C387P
C387PA
C387PB

C388S
C388N

C3K78
C397N
C397T
C397P
C397PA
C397PB

C398S

400

700
800
900
1000

1100
1200

PACKAGE TYPE
PACKAGE OUTLINE

C388T
C388P
C388PA
C388PB

C398N
C398T
C398P
C398PA
C398PB

"VPRESSPAK T'PRESSPAK V'PRESSPAK V'PRESSPAK! V'PRESSPAK V'PRESSPAK

NO.

276

276

148

276

276

276

276

INVERTER SCR's
700

TO 1000 AMPERES

GE TYPE

CONSTRUCTION

C394

C395

C444/C445

C447/C448

C449

AMPLIFYING

GATE

AMPLIFYING
GATE

AMPLIFYING

AMPLIFYING

AMPLIFYING

100-600

100-600

100-600

GATE

ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
Max.
""*
It/oiv/icm
T|RMS)

500-1200

1500-1800

(A)

@ 60 Hz
@ 600 Hz
@ 1 200 Hz
@ 2500 Hz
@ 5000 Hz

700

700

1000

900

850

650

650

1000

900

800

550

550

1000

900

750

275

275

1000

800

150

150

_800

615

8000

8000

12,000

0,000

6500

250,000

250,000

600,000

Max. peak one cycle, non-repetitive

surge current (A)
.2,

Max. 2 t for fusing for 5 to 8.3 msec

(A 2 sec)

R 0JC

Max. thermal impedance (C/W)

*d + *r

L06_

Typical turn-on time (/Usee)

2.0

Turn-off time @ rated voltage and

Tj Vr = 50V min. (jUsec)
@ 20V / /isec reapplied

10

15

@ 200V / /Usee reapplied

@ 400V / /Usee reapplied

14

20

di/dt

GATE

forward
luiwatu conduction sinusoidal
Sin

@Tc'65 o C,50%d uty

GATE

415,000

.06

.04~

.04

2.0

2.0

2.0

,04

1Q-20

40

15

40-25

800

800

Critical rate-of-rise of on-state

800

current (A/ /Usee)

Junction operating temperature range (Cl

40

to

800
25C

- 40 to

25C

-40

to

25C

"

-40

to

500

-40

25C

to

25C

BLOCKING
dv/dt

Min. critical rate-of-rise off -state

voltage exponential to rated
@ Max. Tj <V//Usec)

Vqrm

200

200

200

400

200

400

400

400

400

200

150

150

150

150

150

@-40C

@125C(Min.)

.15

.15

.15

.25

.15

C394A
C394B
C394C

C395A
C395B
C395C

C444/C445B

C394D
C394E
C394M

C395D

C444/C445D

C395E

C444/C445E

C447/C448E

C395M

C444/C445M

C447/C448M

FIRING
l T
GT

v
V GT

Max

required gate current to trigger (mA)

@-40C
@ 125C
Max. required voltage to

trigger (V)

VOLTAGE TYPES
Repetitive Peak Forward and Reverse Voltages

100

200
300

400
500
600

C444/C445A
C444/C445C

700

C447/C448S

800
j

900
<:

1000
i

1100

C447/C448N
C447/C448T

<

C447/C448P

C447/C448PA

1200
;

C447/C448PB

1300
1400

1500

C449PE

1600

C449PM

1700

C449PS

1800

C449PN
PRESS PAK

PACKAGE TYPE
PACKAGE OUTLINE NO.

1"

PRESS PAK
276

1'

PRESS PAK 1" PRESS PAK 1" PRESS PAK

276

149

276

276

1"

276

INVERTER

276

700

SCR's

TO 1500 AMPERES

C613

C648

GE TYPE

CONSTRUCTION

AMPLIFYING

GATE

AMPLIFYING
GATE

1500-1800

1500-2000

1500-2000

AMPLIFYING
GATE

AMPLIFYING

500-1200

GATE

ELECTRICAL SPECIFICATIONS

VOLTAGE RANGE
FORWARD CONDUCTION
'T(RMS)

Max. forward conduction sinusoidal

@> Tc = 65 C, 50% duty (A)

60 Hz
"

600 Hz

cycle, non-repetitive
surge current (A)

Max. peak one

RfljC

tr

8M~

1500

1150

800

1500

800

1500

1100

750

1500

1100

675

1100

6500

20,000

11

5tT

6500

10.000

Max. 2 t for fusing for 5 to 8.3 msec

(A ! sec)
Max. thermal impedance (C/W)
I

td

1150

415.000

80.000

.04

.04

,660,000
.023

2*

Typical turn-on time (Msec)

Turn-off time @
V R = 50V min. (Msec)
@ 20V/jusec

rated voltage and Tj

@
@

lllllll

200V/fisec reapplied

40

400V/MS6C reapplied

Critical rate-of-rise of on-state current

(A/Msec)

40

50

40

800

500

800

Oto 125'C

Junction operating temperature range (C)

-40

125C

to

BLOCKING
Min. critical rate-of-rise of off-state
voltage exponential to rated V d rm
Max. Tj (V/mssc)

500

FIRING
Max. required gate current to

trigger

(mAI

m -40C

360

200 Typ

200

100

125 Typ

30

200

Max. required voltage to

trigger (V)

@ -40C
<a

"~

125C

30
5

'

VOLTAGE TYPES
Repetitive Peak Forward and Reverse Voltages

_
_
-

100

200

500

C648E

C64SM
C648S

C648N

C648T J
C648P

C612PE

C613PE

C712PE

C612PM

C61 3PM

C712PM

C612PS

C6I3PS

C712PS

C612PN

C613PN
C613PT

C712PN
C712PT

C648PA
C648PB

C712L

C613L

PACKAGE TYPE
PACKAGE OUTLINE

PRESS PAK
NO.

276

150

276

276

"

PRESS PAK
276.1

.
.

HEAT EXCHANGER MODULES

for

HIGH CURRENT RECTIFIERS & SCRs

G6/G14/G15

G11
G9/G10/3N221/3N222

CELL DATA
CELL NO.

SURGE AMPS

A390
A430
A540
A570
C350
C380
C390

1500
1500
2400
600
1300
1300
1300
1800
1200
1300
1800
2000
2100
2600
2000
2400

7,000
10,000
1 2,000
1 8,000
1,600
3,500
8,000
8,000
7,500
11,000
10,000
8,000
8,000
10,000
1 8,000
1 5,000

C391

C398
C440
C441
C501

C502
C602
C701

C702

CONDUCTION, LIQUID COOLED AT 40C (1 GPM)

AVG. CURRENT PER CELL
RMS CURRENT FOR SWITCH
180

MAX. VOLTS
PER CELL

SINGLE

G6/G14/G15

G11

G9/G10/3N221/3N222

600
1100
1150
1500
190
260
500
450
450
760
640
550
475
525

_
~

151

,.

Ipi^R^BSlS

190
260

_
_

'

^P^ft^ilIPiiil

^i^^fcliii^pl

^BiWlli

1500

1600
3000
2500

152

15

% .

I a-

z
tt

co
_l
t
LU
CJ
Lu

O
UJ
CO

CD
UJ
1

ait 1

_,

z
to

co

0.

ii

iij

to

UJ

to
UJ
oc
LU
GO

t
g'o
z. "O

>
coo
5 c

or

0)

0) cc

o
.cto

o-

o
o

"
%2rWxi
^fc -M^s?

LL

ia

^b

CM
1-1

/fi&

f/\\

pprtyp^f

-*

C
l7!

-*

> O.
>,
S*y
*

>

E
>

Ol

Q.

Q.

0I_

CM

r,
LU
>
00
u. o
O Q.
5E
O
O U.

UJ

<
<

Oq
u o
U o

CM

CM

1u
UJ
>
z
ceo
u. o
O 5E
O
U.
O O-

r*..

CO
CD

CO

lO

VO

LU
uj

ai

con

CM
r-

e e t
rq,
>J3

L-

O C
(O

<

i 1

*o

1-

>

u_

c_>

c
*

U
fc -

*
t
**

Cft

\o

CM
o^

,__
C7>

*a-

CO

^
m

CM

CM

CO

CO

ro

>
LU

COCJl

oo
ooo
^
UJ

-JUJ

o
(0

z cr

o
ICi

o
o

O
C3

en

in
CO

00 CO

r _J

1 -J
UJ
O
o

o
o

o
o
CO

o
o
ro

uo

^-

CO

<

*l

00

UQ

LU
ooo
0. ooo
CM CO**

u>

E)GnC

32 o

B
.

Soo
oo
o

or

ec

**~

= u.

LU

00
CC
LU

SS
0Q UJ

*r-l

ccuq:
PlflO
U.

>

UJ
LU

D. 3E

fee

BAIA

LU
CD

CM

X cc

.**

ID

_I

r~

CO

tfl

tj

153

<->

a
o

in
13

LU

CD

CO
CO Zj PQ

CC 53

O
CM
in

<

CO

^
m

2 S

O J3

O
U.
_l

oe cm
t
OUr-

O
m

*-

-1
-J hLU

o
CO

KO
o

<o

S2 of

>

UJ

".

Sn >~
oioi

UJ

z
oso
U.U
OSE
O Q-

^olllcu^T,

01

if
/

-^

K.c
*

LU
UJ

joiFSrzJfini

ji^M

CD

c_j

<
1- "|Hg
< SwEsliis
Q ^^3!
Z "lf

CsJ

O)

j|

o z:
O
u.
o D.
-J

LU

^T
"^

St

TRIAC SELECTOR GUIDE

10

12

RMS CURRENT-AMPERES

TRIAC TRIGGERS

layer
The ST2 (diac) is a silicon bi-directional diode which may be used for triggering triacs or SCR's. It has a three
structure with negative resistance switching characteristics in both directions.
device
The ST4 is an asymmetrical AC trigger integrated circuit for use in triac phase control applications. This
hystersis. This
reduces the snap-on effects that are present in conventional trigger circuits by eliminating control circuit
would
performance is possible with a single RC time constant where as a symmetrical circuit of comparable performance

require at least three

more passive components.

'

Vs.

IS2. Is.

Switching Voltage

Output

Package

Min.

Outline
No.

Pulse

GE

Min.

Max.

Min.

Max.

Switching
Current
Max.

Type

(V)

(V)

(V)

(V)

0*A)

(V)

ST2
ST4

28

36'

28

36'

200

3.0

14

80

3.5

Switching Voltage

ForST2, Vsz

18

=Vsi10%

154

TRIACS - ENCAPSULATED PACKAGE

POWER GLASTM PASSIVATED PELLETS

POWER TABTM
GE TYPE

scm

SC136

ISOLATED POWER PACT

230.2

NON-ISOLATED POWER PACTM

SC143

SC146

SC149~~

ELECTRICAL SPECIFICATIONS
VOLTAGE CHARACTERISTICS
Repetitive Peak Off-State Voltage
to +100"C

T c = -40C

100V

SC136A

3CJ6B

SC116B

SC13B6

SC142B
SC142D

SC147B
SC147D

SC146B

SC1166

SC140E

SC142E

SC147E

SC141B
SC141D
SC141E

801438:

SC116D

SC140B
SC140D

SC143D
801421

SC1460
SC148E

SC149B
SC14M)
SC149E

SC1B1B
SC1810
SC151E

SC116M

SC140M

SC142M

SC147M

SC14*M

SC142JW

scumt

scum

SCI SIM

1.85

1.75

1.50

1.83

1.65

ua

100

150

150

100

180

Max. On-State Voltage at Peak of

RMS Current Rating (V)

CURRENT CHARACTERISTICS
T(RMS) Max. RMS On-State Current
l

1,8

63

55

65

(A)

TC(MAX) Max. Case temperature

RMS Currem

at Rated
c)
Cycle Non-Repetitiv

Max. Peak One

Surge Current (A)

50 Hz

@ 60 Hz
'drm

Max. Leakage Current

Max.

DC

Tq = 25" C (mA)

at

Holding Current (mAdcl

+25" C

40 C
Max.

'

DC

Latching Current {mAdcl

T c +25C

MT2+

Gate +

MT2 -

Gate

T c = -40C

BLOCKING
Typical Static dv/dt at Rated V ORrv
Gate Open Circuited (V/usec)

ieo
>

T c - 110 C

so

Min. Commutating dv/dt at Rated Vp R1M

and di/dt = (0.54) l-r(RMS) A/msec.

Gate Open Circuited, (V/usec).

150

200

200

...

iji!liplll

'

TRIGGERING
Max. Required DC Gate Current (mAdc)
to Trigger, @ V D = 12 Vdc

@ Tc

@ Tc

- +25" C

- -40C

MT2+ Gate*
MT2-GateMT2+ GateMT2+ Gate+
MT2-GateMT2+ Gate-

J
1

25

60

50

50

50

50

50

50

SO

SO

SO

50

50

50

SO

50

50

go

SO

*"

50

50

50

60

50

50

K-

SO

80

80

30

80

80

so
SB

80

SO

80

30

28
BO

50

80

80

80

80

;|

50

130

80

80

80

30

SO

80

SO

ao

2.0

25

2.5

2.5

2.5

25

2.S

2.5

2.5

25

DC Gate Voltage to
MT2+ Gate+, MT2- Gate-,
MT2+Gate-.@ V D = 12 Vdc, (V).

m Tc

- +25C

T C

40

Max. Required
Trigger,

30

80

1.

MECHANICAL SPECIFICATIONS
PACKAGE OUTLINE NO.
Non-Isolated Tab
Isolated

60
~

Tab

155

..

""

TRIACS

HERMETIC
PACKAGES
POWER GLAStm
PASSIVATED PELLETS
STUD/TO-3 FLANGE

GE TYPE

SC245

SC240

SC250

SC260

SC265
SC266

SC241

SC246

~SC251~

SC261

200 V

SC240/1 B

SC245/6B

SC250/1B

SC260/1B

SC265/6B

V
500 V
600 V

"sC240/1d"

SC245/6D

SC250~1 D~~

SC260/1D
SC260/1 E

SC265;6D _
SC265/6E

PRESS-FIT

ELECTRICAL SPECIFICATIONS

VOLTAGE CHARACTERISTICS
@

Repetitive Peak Off-State Voltage

-40 C to +100C

Vr

400

Peak of

at

RMS Current Rating (V)

CURRENT CHARACTERISTICS
't(RMS) Max RMS On-State Current
T
,.. . , Max. Case Temperature
Tc(MAX

at

Rated

SC250/1M

1.83

1.65

1.65

1.58

10

15

25

82

80

80_

81

78

86
"83~

""75~

80

74

Isolated

79

76

80"

71

74
80

90

90

230

275

100

100

250

300

o!i

0.1

0.2

0.T"

50

50

75

75

100

150

150

E~

SC260/1

SC265/6M

.38

40

RMS

Current (C) for

Non-Isolated Stud/Press-Fit
Isolated Stud/Non-lsolated

TO-3 Flange

TO-3 Flange

"

"68

Max. Peak One Cycle Non- Repetitive Surge

Current (A)

@ 50 Hz
@ 60 Hz

Max. Leakage Current

'l

SC250/1

SC245/6M

(A)

TSM

SC245/6E

Max. On-State Voltage

sraibTi'i"

SC240/1M

at

Tc

= 25C

ImAI

Max.

DC

@ Tc
@ Tc

= +25 C

50

= -40C

loo

100

Max.

@ Tc

@ Tc

DC

~0.1

Holding Current (mAdc)

Latch ng Current (mAdc)

MT2+ Gate +
MT2 - Gate MT2+ Gate MT2+ Gate +
MT2 - Gate MT2+ Gate-

= +25 C

= -40 C

100

100

100

100

100

Too"

100

Too"

100

loo"

200

200

200

200

200

200

200

200
"200

20~o"

200

200
200"

200

200

400

400

400

400

400"

100

150

250

150

150

BLOCKING
dv/dt

dv/dt (c)

Typical Static dv/dt at Rated

Gate Open Circuited (V/nsec)

V DRM

Min. Commutating dv/dt at Rated V d rm

and di/dt = (0.54) Ij(RMS) A/msbc,

Gate Open Circuited (V/Msec)

TRIGGERING

DC Gate Current
MT2+ Gate+, MT2- Gate-,
MT2+Gate-, @ V D = 12Vdc(mAdc)
@ T c = +25" C

50

50

50

50

80

Tr

80

80

80"

80

120

Max. Required

to Trigger,

Max. Required

-40C

DC

Gate Voltage to
Gate +, MT2- Gate-,

MT2+
MT2+ Gate-, VD
@ Tr

Trigger,

12Vdc

= +25 C

2.5

2.5

2.5

2.5

2.5

3~5

3.5

3.5'

3.5

3.5

24l(SC24l)
242,3, 4,5

24KSC240

241(SC24I)

25KSC26I)

242,3,4,5
a6(SC240)

242,3,4,5
6(SC240)

252, 3, 4, 5,

251 (SC2$I)
252, 3, 4, 5,

8 6(SC260)

B6(SC260)

Tr =

-40

MECHANICAL SPECIFICATIONS
PACKAGE OUTLINE NUMBER

6(SC240)

156

Transient
Voftage

Suppression

From General

Electric

New Transient Protection Manual

New

112 page manual combines in one

knowledge and experience

Copies are available from any authorized

publication theory,

relating to transient cause, detection

distributor,

and

GE OEM

Electronic

Sales Office, or by sending $2.50 plus

applicable tax to General Electric,

protection accumulated by General Electric

scientists and engineers. ..includes a

Semiconductor Products Department,

comprehensive selection guide and product

Electronics Park, Bldg. 7-49, Syracuse,

specification sheets for determining the

York 13201.

optimum

GE

Components

GE-MOV Varistor.

157

New

GE-MOV VARISTORS
General Electric zinc oxide varistors are voltage dependent,

symmetrical resistors which perform

in

manner

similar

to back-to-back zener diodes in circuit protective functions

and offer advantages in performance and economics. When

exposed to high energy voltage transients, the varistor im-

pedance changes from a very high standby value to a very

low conducting value thus clamping the transient voltage
to a safe

The dangerous energy of the incoming high

absorbed by the GE-MOV varistor, thus

level.

voltage pulse

is

protecting voltage sensititive circuit components.

I-V Oscillograph
(Actual Photo)

SELECTOR GUIDE
1.

2.

Determine maximum (steady-state) voltage appearing across the varistor when no transients are present. Include
any high line conditions that may occur. For example: 1 17V RMS-10% high line = 129VRMS. Locate voltage on
horizontal scale. Drop down to appropriate GE-MOV varistor series (i.e., MA, L and PA series).
Locate level of energy transient on the left-most vertical scale. Match with series determined in Step No. 1.
Example: 129VRMS, 20 Joules (L and PA series). For unknown energy level, estimate by type of application.
Less than 20 Amps. max. transient current, stored energy is low (e.g., relay contact protection). Or if varistor
is

placed after a transient-absorbing

Joules)

(.1-.7

is

component

transformer, inductor, capacitor), then the

L, or

(i.e.,

good choice. For higher peak pulse current requirements, check the ZA,

MA

series

PA

series,

depending on voltage.
3.

After energy and applied voltage level considerations, average power dissipation needs must be considered. For
infrequent transients (once/hour, once/day), any series is adequate. For frequent transients, or where rigid
mounting is required, use the PA series. For specific selection, refer to individual spec sheets and application
notes.

AVERAGE
POWER
ENERGY DISSIPATION
(Joules)

(Watts)

MAXIMUM STEADY-STATE APPLIED VOLTAGE

VOLTS - AC RMS
IS

35

75

95

130

150

20 40 60 80 100 120140160 180 200

.7

MA SERIES
18-264 VRMS
23-365 VDC

0.2

::::

.6-15

.17-. 55

.24-13

480 550

300

400

500

600

10-1 15

1000

700

PACKAGES

800

PULSE

CURRENT
MAX.

PEAK

VRMS
VDC

PULSE

10-20 A
^ J000-2000A
frfrf

V"

CURRENT
L SERIES
95-1000 VRMS

VDC

PA SERIES
3-15

x^xox^xXx^i^x^o:-:-:-:-:-:-:-:-:-:-:-:-:-:-:-:-:-:-:-:-:-:-

120- 675

10-80

S75

MAX.

ZA SERIES
14.153

1-160

420

275 290

VOLTS - DC

130-575
170-750

158

VRMS
VDC

250-500A

4000A
MAX.
PEAK n IMIP^'
*
PULSE

CURRENT400A 2000A
MAX.
PEAK
PULSE

^^^
*"^"~

CURRENT 4000A

THE CASE FOR GE-MOV VARISTORS

18

32

100

MICROSECONDS
Actual photograph of oscilloscope recording of

household power

line

input (24 hours)

Voltage transient problems can be caused by:

6KV

Lightning

Turning off inductive components

">
IT

POWER

Contact switching

-"

SI8NAL

Electromagnetic coupling (noise)

GE-MOV VARISTOR CLAMP DANGEROUS VOLTAGE TRANSIENTS AND

DISSIPATE THEM AS HARMLESS HEAT ENERGY.
159

ZA SERIES
REPLACEMENT FOR

APPLICATIONS
Solid State

Motor Control

AC

Silicon Carbide

Arc Suppression

Gas Discharge Tubes

Traffic Controllers

Communication Equipment

Calculators

Smoke

Circuits

Detectors

Instrumentation

R-C Networks (non-dv/dt)

Neon Bulbs
Electronic Crowbar

Automobiles

as transient

Zener Diodes

Line Cord Protection

Control

when used

Selenium Tryectors

Solid State Relays/Timers

the following

suppressor:

,.

1-3

5-15

JOULES

JOULES

Many Zeners Voltages 12-1 15 VRMS, 16-153 VDC Energy Absorption to 15 Joules Peak
Current to 1000 A Characterized @ 1mA DC For Complete Specif ications, see Page No. 1438.
Replaces

MAXIMUM

MAXIMUM

MAXIMUM

APPLIED VOLTAGE

MODEL
NUMBER

AC-PEAK

AC-RMS

50-60H2

VOLTS
V18ZA1
V18ZA3

10

V22ZA1
V22ZA3

V24ZA1
V24ZA4

DC

VOLTS

14

14

CURRENT

(WATT-SECS)

18

IE

31

19

21

20

IHhi

28

26

V39ZA1
V39ZA6

Iffjjjjil

35

31

V47ZA1
V47ZA7

30

4?

38

V56ZA2
V56ZA8

35

49

45

V68ZA2
V68ZA10

40

67

56

V82ZA2
V82ZA12

SO

"

66

60

SI

102
102
127
127

V120ZA1
V1 20ZA6

n
IS

106
106

0.17
0.40

46

0.8

250
1000

0.18
0.40

46
43

260
1000

0.18
0.40

54

260
1000

0.19
0.40

60
58

250
1000

0.20
0.45

65

250
1000

0.21

2S0
1000

0.22
0.45

86

8.0
2.0
10.0

250
1000

0.24
0.50

112
108

2.5
12.0

260

0.25
0.50

135

1000

0.26
0.55

160

154

0.20
0.45

200
190

0.20
0.45

245
240

0.20
0.45

286
290

1.0

5.0

6.0
1.4

7.0
1.7

V150ZA1
V150ZA8

86
95

134
134

us

163
163

115

ISJ
:

3S
32

250
1000

1.2

ss

VOLTS

WATTS

AMPS

0.6
3.0

0.8

'

VOLTAGE
AT 1 AMP/
PEAK

POWER
DISSIPATION

<6/iS

0.18
0.40

4.0

VARISTOR

250
1000

4.0

V33ZA1
V33ZA5

MAXIMUM

MAXIMUM
AVERAGE

3.0

IlilP
15

V180ZA1
V180ZA10

JOULES

0.5

V27ZA1
V27ZA4

V100ZA3
V100ZA15

NON-REPETITIVE
PEAK PULSE
t

VOLTS

17

ENERGY

260

3.0
15.0

1000

10

SOO

6.0

2000

1.2

$00

80

2000

1.5

500
2000

10.0

160

0.45

43

Si2

70

87
76

91

130

Pulse

PA SERIES
Rigid
1

Mounting

70-750

VDC

Up

15W

to

Dissipation Voltage Range 130-575

Peak Pulse Current to

Strike Distance For

4000A

MAXIMUM
NON REPETITIVE

MAXIMUM
MAXIMUM
ENERGY

AC-PEAK

PEAK PULSE

JOULES

CURRENT

50-60H;

tp

V130PA10AI
V130PA20A1
V130PA20B I
V130PA20C |

VOLTS

(WATT-SEC)

70

10
20
20
20

illlli

V150PA10A1
V150PA20A1
V150PA20B 1
V150PA20C 1

Creep and

8
15

15

illlllp

io
20
40
40
40

lilils

lilili

20

lillllli

60

40
40
40

13
13

40
40

12
12

15

IS

||11

15

13
13

V320PA40a|

VOLTAGE
AT 10 AMP/
PEAK
VOLTS

WATTS

*i

30

V320PA40B |
V320PA40C |

AMPS

VARISTOR

DISSIPATION

^^^P

lllflM

V275PA10Ap
V275PA20A |
V275PA40A 1
V275PA40B |

< 6 /J S

MAXIMUM

MAXIMUM
AVERAGE
POWER

10
20
20
20

lllllp
at

V250PA10a|
V250PA20AS
V250PA40A I
V250PA40B %
V250PA40C |

V275PA40C

NEMA

VRMS,

Complete Specifications, see Page No. 1432.

APPLIED VOLTAGE

MODEL
NUMBER

Meets

13

fill

V420PA20A I
V420PA40A 1
V420PA40B I
V420PA40C ||

V460PA20A P
V460PA40A
V460PA40B I
V460PA40C

V480PA20A I
V480PA40A |

V480PA80AI
V480PA80B I
V480PA80C 1

1780

i?8i)

l?00

13M

1320
1320

V510PA20A||

V5IOPA40A1
V510PA80A1
V510PA80B||
V510PA80C

V550PA20A i
V550PA40A
V550PA80Af|
V550PA80B ||
V550PA80C If

1&00
1410

V575PA20A il
V575PA40A |
V575PA80A 1
V575PA80B p
V575PA80C il

MA

1460
1400

SERIES

Low

Cost Designed for Automatic Insertion Molded Axial Package Voltages 18-264 VRMS, 26-365
700 milli Joules Peak Pulse Current to 20A For Complete Specifications
see Page No. 1426.

Energy Absorption to

MAXIMUM

MAXIMUM

APPLIED VOLTAGE

MODEL
NUMBER

AC-PEAK

MAXIMUM
ENERGY

NON-REPETITIVE
PEAK PULSE

JOULES

CURRENT

50-60Hz

tp

VOLTS

NOTE: Gh-MOVTW Vans'oi

visomaiaI

MA Series

<6 yS
AMPS

(WATT-SECSI

Models from ^1-75

VRMS,

MAXIMUM
AVERAGE
POWER
DISSIPATION

M-WATTS

/6-102

VDC

MAXIMUM
VARISTOR

VOLTAGE
AT 1 AMP/
PEAK
VOLTS
?*e oagr 14 26

V150MA26 I

B8
92

130

121
37

.10
.20

10
70

V180MA1Ai
V180MA3BI

105
110

148
55

144
IB?

.15

10

V220MA2A If
V220MA4B |
V270MA2A 1
V270MA4B |
V330UA2A m
V330MASB II

133
38

IB7

20

10

195

16!
191

.40

20

163

230

274
235

20

10

.40

<ro

188

266

267
2)4

.25
.50

lifllllillliii

640
560

10

750
>00

300

124

4K-

30

V390MA3A
V390MA6B ||

234

331

242

34?

323
334

.30
.60

V430MA3A
V430MA7B

253
264

356
373

349
365

.35
.70

If

161

280
250
350

S5B

1
10

420
390
530
460

VDC

Protection

4000A Peak

Up

Pulse Current Capability

AC-RMS

VOLTS
V95LA7A
V95LA7B
V130LA1
V130LA2
V130LA10A
V1 30LA20A
V130LA20B

MAXIMUM

t50

V250LA2
V250LA4
V250LA15A
V250LA20A
V250LA40A
V250LA40B

,
f

V275LA2
V275LA4
V275LA15A
V275LA20A
V275LA40A
V275LA40B

NON-REPETITIVE
PEAK PULSE

AC PEAK

DC

JOULES

VOLTS

IWATT-SECSI

CURRENT
tp <6 MS
AMPS

5060Hz

VOLTS
134

130

l4

212

175

200

ttflfMl
330

339

24
0.24
0.50
0.85
0.85

420
420
390
390
355

2000

4000
1000

400
400

0.28
0.28

15

:ooo

.6

780

2000
4000
4000

.6

780

It
40

.9
.9

780
740

2UIX.1

0.55
0.90
0.90

1050
1050
980

0.55
0.90
0.90

1180

0.55
0.70
1.00
1.00

1200
1200
1110
1110

0.55
0.70
1.00
1.00

1300
1 300
1300
1200

4000

0.60
0.70
1.00
1.00

1400
1400
1400
1300
1480
1480
1480
1340

:'
:

^, n

Juu

424

V320LA15A
V320LA20A
V320LA40A
V320LA40B

,,

41?

V420LB20A
V420LB40A
V420LB40B

420

560

20
40
40

V460LB20A
V460LB40A
V460LB40B

460

650

615

20
J"
40

4000

20

'.'000

V510LB20A
V510LB40A
V510LB80A
V5I0LB80B
V550LB20A
V550LB40A
V550LB80A
V550LB80B

V575LB20A
V575LB40A
V575LB80A
V575LB80B

.;

4000
4000
2'iO0

4000
:-u00

* u

..
*'"

K,K
J

679

V1000LB80A
V1000LB160A 1000
V1000LB160B

4"Jt'lO

80

4000

20

2'Xl0

80

.1000
4'j00

2000

751

'.'000

778

20
40
80
80

3000
2000

0.65
0.80

813

20
40
80
80

4000
4000

1.10
1.10

80
160
160

2000
4000
4000

0.9

1414

"

600

0.28
0.28
0.60
0.60
0.90
0.90

V300LA2
V300LA4

V480LB20A
V480LB40A
V480LB80A
V480LB80B

.',05

400
400
2000
>000
4000
4000

;;

40
40

405

361)

0.28
0.28
0.60
0.60
0.90
0.90

400

400

4
,,,

360
340
340

220

20Q0
2000
4000
4000

40
40

IHtfitii

245

.24
.24
.50
.85
.85

314

WATTS

VOLTAGE
AT 1 AMP/
PEAK
VOLTS

400

400
400

10
20
20

POWER
DISSIPATION

MAXIMUM
VARISTOR

045

20

10
20

MAXIMUM
AVERAGE

;.,00

400
2000
4O00
4000

V150LA1
V150LA2
V150LA10A
V150LA20A
V150LA208

VDC

Energy Absorption to 160 Joules

MAXIMUM

iiiiilni
130

480 VRMS, 130-625

For Complete Specifications, see Page No. 1418.

APPLIED VOLTAGE

SERIES

to 120, 240, 277,

MAXIMUM
Mnnc
NUMBER

./

162

2000
4000

1.3
1.3

mo
.

640
640
840
580
750

750
700
700
700

645
830
830

1130
1080

2500
2500
2400

POWER MODULES
New General

power modules are miniaturized,

Epoxy encapsulated modules capable

Electric

self-contained,

of performing basic AC to
Typical applications include

DC conversion functions.
- DC power supplies, DC

motor controls, battery chargers, magnetic clutches

and brakes.
All General Electric

Glas
pellet

power modules incorporate Power

passivated semiconductors

with the

latest

mountdown

and interconnect tech niques,

thereby assuring the utmost in reliability.

COMMON CHARACTERISTICS @
Breakdown

Isolation

Surge, Peak
Fusing,

2
l

25C

2,500

One Cycle

V PE

A
A 2 SEC
300

8.3 msec

370

Gate Current to Trigger (Max.)

40

Gate Voltage to Trigger (Max.)

mA

2.5

On-State Current Rate of Rise (di/dt)

Off-State Voltage Rate of Rise (dv/dt)

Operating Temperature

100 A//uSEC

20 V//USEC
-40 to

125C

GE TYPES
BASIC CIRCUIT

SCHEMATIC

AVERAGE

85 (A)

V.N
(V)

WITHOUT
BASIC CIRCUIT FREEWHEELING

WITHOUT
WITHOUT
GE-M0V EITHER DIODE

DIODE

VARIST0R

OR VARISTOR

120

WV2BE25C

WV2BC25C

W2BE25C

W2BC25C

240

WV2BE25E

WV2BC25E

W2BE25E

W2BC25E

120

WV2BJ25C

WV2BK25C

W2BJ25C

W2BK25C

240

WV2BJ25E

WV2BK25E

W2BJ25E

W2BK25E

120

WV2BA25C

W2BA25C

240

WV2BA25E

W2BA25E

25

25

25

163

GE TYPES

BASIC CIRCUIT

SCHEMATIC

BASIC CIRCUIT

WITHOUT
GE-MOV
VARISTOR

120

WV2BH25C

W2BH25C

240

WV2BH25E

W2BH25E

120

WV2CA25C

W2CA25C

240

WV2CA25E

W2CA25E

120

WV2AA50C

W2AA50C

240

WV2AA50E

W2AA50E

AVER.

V|N

85C (A)

(V)

25

25
*ACI

AC2*

*G2

50A

Gl<

RMS
-5fi*ACI

AC2*

*^
BASIC BUILDING BLOCK
*2

MODULES

|i

For further information on these and other

Glo

9 G2

custom

GE

circuit types, contact:

Semiconductor

Electronics Park, 7-49

New York 13201

(315)456-2633

Syracuse,

Phone:

For outline dimensions and pinout configurations, see PAGE 1444

164

SUBSCRETEtm DEVICES

DESCRIPTION:
The new family of Subscrete Devices from General Electric is a series of chip-like
devices
designed specifically for hybrid circuits or similar circuit manufacturing techniques.
Available in three
basic configurations,

Subscrete Triacs, SCR's and Rectifiers utilize Power Glas passivated

the ultimate in device performance and reliability. The intimate, void-free
bond
between the silicon chip and the stress - matched, glass coating provides stable, low level leakage
current and long-term reliability. When properly mounted and heat sinked, these fully tested
Subscrete Devices can provide equivalent performance and reliability of comparable discrete devices
at substantial cost savings to the user.
pellets providing

PACKAGE CONFIGURATIONS:
STEP LEAD CONFIGURATION

Completely ready to reflow solder with copper step lead attached

to the chip top contact and a soft soldered stress-relief plate at-

tached to the chip bottom contact.

Current and thermal spreading accomplished by attached step lead

and

No
All

stress-relief plate.

additional connections to chip required by user.

contact areas are solder-clad and

in a

common

seating plane.

ISOLATED CONFIGURATION

Soft soldered, stress-relief plate between chip and metallized pad

on substrate.

Bottom

of substrate metallized and solder coated allowing reflow

attachment to heat dissipator.

Current and thermal spreading accomplished by attached step lead

and

stress-relief plate.

External leads available for electrical connectors.

No additional connections to substrate required by

SANDWICH CONFIGURATION
- Soft-soldered, stress-relief plates
bottom contact

Top

user.

attached to both top contact and

areas, providing for current

and thermal spreading.

and bottom contact plates can provide for customized mounting by user without coming in contact with the chip metallization.

165

subscrete devices
power series
SCR's

Triacs

VOLTAGE GRADE
= 100 D = 400

PACKAGE CONFIGURATION

= Step Lead
1

B = 200

= Isolated Step Lead

EXAMPLE: 6 amp. 400 volt.

Triac

is

<<

E = 500

C = 300 M = 600

2 = Sandwich

Subscrete

Rectifiers

tsm

Step Lead

MPA1060D.
i

GE TYPE

CURRENT RATINGS

(RMS)

PEAK ONE
FULL CYCLE
SURGE

drm

PEAK

VT M
PEAK

(NON-REP)

OFF-STATE

ON-STATE

CRITICAL
RATE-OF-RIS

VOLTAGE
VOLTS

OF OFF-STAT
VOLTAGE

dv/dt

ON-STATE

CURRENT

CURRENT
@ 60 Hz
AMPERES

mA

(MAXIMUM)

(MAXIMUM)

(STATIC)

Tj - 100

VOLTS//Z SEC

(MAXIMUM)
1.83

MPA106

6 Amperes

80

@I TM

0.1

25

8.5Apk.
1.65

MPA110|

10 Amperes

100

50

0.1

14.0Apk.
GO

u
<

1.52

MPA115|

15 Amperes

120

@Itm

0.1

oc

100

21.0Apk
1.58

MPA125

25 Amperes

250

@Itm

0.2

25

35.0A pk.
1.38

MPA140

40 Amperes

300

@Itm

0.2

25

56.0A pk.
'tsm

PEAK ONE
FULL CYCLE
SURGE
(NON-REP)

ON-STATE

CURRENT RATINGS

GE TYPE

CURRENT
@ 60 Hz
AMPERES

(RMS)

(MAXIMUM)

dv/dt

'drm"rrm

VT M

OFF-STATE

ON-STATE

PEAK

OR REVERSE
CURRENT
mA
(MAXIMUM)

(STATIC)

CRITICAL
RATE-OF-RIS

PEAK

OF OFF-STAT

VOLTAGE
VOLTS

VOLTAGE
Tj = 100C
VOLTS/jU SEC

(MAXIMUM)

(TYPICAL)

1.95

MPA210

10 Amperes

90
j

0.1

@I T M

50

20.0A pk.
1.5

OC

u
GO

250

MPA225

25 Amperes

0.2

@I T M

50

50.0A pk.

1.9

MPA235

35 Amperes

300

'
[

0.2

@'tm

50

70.0A pk.
I

CURRENT RATINGS
REC
TIFI-

ERS

30 Amperes

(RMS)

GE TYPE
MPA330

PEAK ONE CYCLE

SURGE (NON-REP)
FORWARD CURRENT
@ 60 Hz AMPERES

firm
peak reverse

300

0.2

FS m

(MAXIMUM)

CURRENT mA
(MAXIMUM)

V FM MAXIMUM
PEAK FORWARI
VOLTAGE VOL
(MAXIMUM)
1.5

@ FM
l

T66

60Ap

'V

dv/dt

'gt

OMMUTATING)

DC GATE
TRIGGER

3ITICAL RATE:
-RISEOF OFF-

CURRENT

ATE VOLTAGE

= 100C.60Hz MT2+ GATE+

GATERATED RMS MT2MT2+ GATECURRENT
mAdc
VOLTS/jU SEC
(MINIMUM)
(MAXIMUM)

R 6)jc

Vgt
DC GATE

HOLDING

TRIGGER

VOLTAGE
Vdc

>

LATCHING

MAX MUM

CURRENT

APPA RENT
THEF{MAL

CURRENT

MT2+ GATE+

mAdc

MT2+ GATEmAdc

IMPED ANCE

MT2- GATE-

Hz
C/WAT T (MAX.)
61)

JUNCTION
OPERATING
TEMP.

RANGE
C

NON-

(MAXIMUM)

(MAXIMUM)

(MAXIMUM)

ISOL.

ISOL.

-40

liM^^gH

2J

50

^^^k|m

50

^^S^B

50

2,6

50

200

50

200

50

2.5

2.2

1.5

200

1.3

lo

3.4

+100

40

to

noo

I
1

-40

2.7

to

2.5

M00 1
"

^^^^^S

50

^^^^^S

80

CIRCUIT

gt

75

2.5

200;'"

-.

1.2

40

to

1.9

H00 1
-40

75

2,5

Tj = 100C

CURRENT

MSEC

mAdc

Vdc

to

1.2

+100

Vgt
DC GATE
TRIGGER
VOLTAGE

200

0.8

DC GATE
TRIGGER

:OMMUTATED
URN-OFF TIME

>H

"l

HOLDING

LATCHING

CURRENT

CURRENT

mAdc

mAdc

R0jc
STEADYSTATE

THERMAL
RESISTANCE
C/WATT
(MAXIMUM)

Tj

JUNCTION
OPERATING
TEMP.

RANGE
C

NON(TYPICAL)

(MAXIMUM)

MAXIMUM)

(MAXIMUM)

(MAXIMUM)

ISOL.

ISOL.

1.8

4.0

-40

25

50

''!.

30

.;

-."-tto.'-v/-

to

+ 100
-40

50

25

"1J3

50

50

40

2.5

75

fiDfe

1.7

2.5

t0

1.7

2.5

to
-1100

-40
to
4-100

NOTES:

STEADY-STATE Tj JUNCTION
IERMAL RESISTANCE OPERATING
TEMP.
:/WATT (MAXIMUM)

@JC

ION-ISOL.
1.7

ISOL.

2.5

1.

All characteristics given for

2.

R0jc

Tj = 25 C

unless otherwise stated.

Definition:

For Non-Isolated Configurations: Thermal resistance from junction to geometric center of

RANGE C

bottom

plate.

For Isolated Configurations: Thermal resistance from junction to bottom of substrate under
geometric center of chip.

-40 to +175
3.

Most maximum allowable ratings depend almost entirely on the quality and thermal
characteristics of the bond when mounting the Subscrete Device. For this reason,
normal ratings such as average current, surge current and operating temperature range,
are obtainable when the solder thickness is limited to <3 mils and good wetting is achieved.

wm
167

MILITARY TYPES AVAILABLE

Military
Specification

TX Type

Type

Military
Specification

TX Type

Type

JAN 1N1184 thru 1N1190

JANTX 1N1184 thru 1NU90,R

MIL-S-19500/297

JAN 1N4148/-1

JANTX 1N4148/1

MIL-S-19500/116

JAN 1N1202A, 04A

JANTX 1N1202A, 04A.R

MIL-S-19500/260

JAN 1N4150/-1

JANTX 1N415Q/-1

MIL-S-19500/231

JANTX 1N1206A.R

MIL-S-19500/260

JAN 1N4153/-1

JANTX 1N4153/-1

MIL-S-19500/337

JAN 1N1614, 15, 16

MIL-S-19500/162

JAN 1N4454/-1

JANTX

1N4454M

MIL-S-19500/144

JAN 1N3289, 91, 93

94, 95

MIL-S-19500/246

JAN 1N4459.R

JAN 1N1206A

JAN 1N3673A

JANTX 1N4531

MIL-S-19500/116

JAN 1N4532

JANTX 1N4532

MIL-S-19500/144

JAN 2N489A-94A

JANTX 2N48SA-94A

MIL-S-19500/260A

JANTX )N3673A,R

MIL-S-19500/269

JAN 1N3713, 15, 17

19, 21

JAN 1N3766

JANTX 1N3766.R

MIL-S-19500/297

JAN 1N3768

JANTX1N3768, R

MIL-S-19500/297

JAN 1N3890, 91, 93

MIL-S-19500/162

JAN 1N4531

& R

JAN 1N3909, 10, 11

93&

JANTX 1N3B90,

91,

JANTX 1N3909,

10, 11
12, 13, R

12, 13

JAN 2N682,
JAN 2N2323,

MIL-S-19500/304

3, 5, 6
7, 8, 9

4,

8,

& A

1
7,8.

JANTX 2N682.

3, 5,

JANTX 2N2323,

4, 6, 8,

MIL-S-19500/75
*

MIL-S-19500/108

g&

MIL-S-19500/276

MIL-S-19500/308

HIGH RELIABILITY SPECIFICATIONS

Conservative Design

Commercial
Type

Nigh Rel.

Type

A27BR1200

"
-

/tROU}

lo

n-

''

1N1204

A27DR1200

Maximum

Vdrm, Vkrm

Tstg, TjOP

Estimated Maximum Failure

Rate in Conservatively
Designed Equipment

Conditions

%/10O0

Vrsm

12A

-65

to

+100C

100V

200V

001

12A

-65

to

+ 100C

200V

400V

.001

400V

600V

001

A27MR1200

1N1206

12A

65to+100C

A28BR1200

MSB

12A

-65to+100C

100V

200V

.001

A28DR1200

A28D

12A

40OV

.001

1N3891

12A

65to+100C
to + 100C

200V

A28BR1201

65

100V

200V

.001

A28DR1201

1N3693

12A

-65to+100C

200V

400V

001

25A

65

+ 100C

100V

200V

001

25A

-65to+100C

200V

400V

.001

A38BR1200

"^^Mt^jH^-* -Cij,-,

to

A38DR1200

1N2158

A38MR1200

1N21S0

25A

-65

to -f 100C

400V

600V

A38BR1202

1N39U

30A

65

to

+100C

100V

200V

A38DR1202

1N3913

30A

-65to+100C

200V

400V

C5AR1200

2N2324

1.6A

65

hrs.

001
''

'Av?

/sffS?*'*-

.jgg,"'

^y&-.

C5BR1200
C5DR1200

2N2326
c

^^r^

50V

100V

1.6A

65

to

+85C

100V

200V

"'""jV JBBf^

1.6A

-65

to

+85C

200V

400V

4.7A

-65

+ 100C

50V

100V

4.7A

65to+100C

100V

200V

4.7A

-65

200V

400V

100V

~*
;

2M772A

C10AR1200

+85C

jf*E^iiti^iliiki

C10BR1200

2N1774A

C10DR1200

2M777A
2N1772

C11BR1200

2N1774

C11DR1200

2M777

2N261J?

C35AR1200

C35DR1200

JNSStf'v': 7 .'.

C35ER1200

2N689

C35MR1200

2N690

"

'
'

'A

'

2N685

C38HR1200

2N686

C38DR1200

21*688

AA~

">- h

.**

,~ig;,i*MT _\

4 7A

to

+85C

-65

to

+85C

100V

200V

4.7A

-65 to +85C

200V

400V

4.7A

65

to

+85C

300V

600V

16A

65

to

+85C

50V

100V

16A

65

to

+85C

100V

200V

16A

-65

to

+85C

200V

400V

t~"i**r*

'

16A

-65

to

+85C

250V

500V

Ar 4rt

._ ^

65

to

+85C

300V

600V

"'-/MI^'^J'

100V

200V

T. <jbW

125V

250V

200V

400V

16A

v-yK
--

^ c-X'*
-,5'

'

JW-*.
jjjgr:

j?'

;
.

.-&>,&&.

16A
16A

16A

'
'

65to+100C
65to-fl00C
65to+100C

-"

".

.001

XA
,

-jflot"

'-,".

';;$$

"<_

ifitfc

2NS2D4

22 3A
-

65

to

+ 85C

300V

168

600V

!<"%/

-^':

"

C137MR1200

&H~;

4.7A

'

C38BR120O

-.'!,

50V

'

~.
r:2;,-'-#W",>

"

-65

2W88S
'

to -|-100C

'

.-JN6H

C35BR1200

to

C11AR1200

C11MR1200

A<*t- ***'

to

"'

"

Jr -4tj(

-',

',

HARDWARE
INSULATING KITS

PUMK

STUD

T-OS

MOIMTMS

NOT SUPPLIES WITH UNITS UNLESS STATED

ORDER DY PART #

KIT

DIAMOND BASE

PART

A7149416GR2

STANDARD HARDWARE SUPPLIED WITH

UNIT.

PART

A7149416GR1

TYPICAL ISOLATED
MOUNTING:

INSULATING KIT

POWER TAB
WITH 2 LEADS

NO HARDWARE SUPPLIED
WITH

UNIT.

POWER TAB
WITH 3 LEADS
SUGGESTED MOUNTINGS:

JLv,.
1)

2)
3)

SCREW. LOCK WASHER AND NUT

RIVET OF EQUIVALENT SIZE
DIRECT SOLDER MOUNT

^|

6-32

PART

part

138B8189GR11

138B81S9GR4

CHASM WUNTUM

PART

138B8189GR3

ft
BOTH PARTS
CAD PLATED STEEL
J)

PART

(A) y.-2t

STEEL NUT,

Nl.

CAD PLATED.

TEFLON

JO

3>

138B8021GR10P

176 MIN. THK.

(B) EXT. TOOTH LOCKWASHER. STEEL
CAD PLATED. .023 MIN. THK.

STANOARD HARDWARE SUPPLIED WITH

UNIT.

PART

13SB8021GR-20X

169

WACMM.mOO

AVAIL*!*.! UPON Htgutft

STANDARD HARDWARE SUPPLIED

WITH UNIT PART I 13SBB021GR10N

PART

138B8021OR20Y

THIS PACKAGE IS AVAILABLE IN

ISOLATED STUO. REFER TO APPROPRIATE

SPECIFICATIONS OR USE

AS ABOVE.

38BS021 GR20Y

INSULATING KITS

STUD

MOUNTING

PACKAGE

(1)

(2)

NOT SUPPLIED WITH UNITS UNLESS STATED

ORDER BY PART #

KIT

X.-24 STEEL NUT,

CAD PLATED
180 MIN. THICK
NOT AVAILABLE

PART

138B8025GR24

EXTERNAL TOOTH
LOCKWASHER,
CAD PLATED STEEL
MIN THICK

.028

STANDARD HARDWARE SUPPLIED WITH

UNIT.

PART

138B8021GR25

(C)

COPPER TERMINAL
THICK, TIN PLATED
MICA WASHERS
1.375 O.D. X .386 ID. X
.005 THICK
.050

(D) (F)

(E)

TEFLON WASHER
.450 O.D.

PART

.373 I.D.

138B8021GR33

BOTH CAD PLATED

STEEL

STANDARD HARDWARE SUPPLIED WITH

UNIT.

PART

138B8021GR36

14-20

NM.IO
I

(C)

COPPER TERMINAL
MICA WASHERS
X

STUD
(E)

BOTH PARTS
CAD PLATED STEEL
STANDARD HARDWARE SUPPLIED WITH

.505 ID.

PART

.050

.375 O.D.

THICK

TEFLON WASHER
.565 O.D. X .505

UNIT.

PART

.050

THICK, TIN PLATED

(D) (F)

.050

I.D.

THICK

138B8021GR42

138B8021GR46

X 16 CAD PLATED STEEL NUT,

THICK AND INTERNAL TOOTH
LOCK WASHER, .050 THICK
STANDARD HARDWARE SUPPLIED WITH
V,

.312

UNIT.

PART

PRESS PAK

NOT RECOMMENDED
FOR THIS PACKAGE
LARGER

OR

138B8021GR53

SERIES 1000

See Specification Sheet, Page 1411

See Specification Sheet, Page 1413

SERIES 2500

17G

Semiconductor product application and circuit design inmation is provided in these application notes and article
reprints from professional and technical journals.
Prepared

Particular publications
Electric

1.

which

interest

and written by General

PLEASE ORDER BY PUBLICATION NUMBER

General References:

General Applications of Signal Diodes and Transistors

4.

a val-

graphs, Etc.

90.78 Portable

90.75 Designing A 12- Volt DC to High Voltage DC Converter

200.57 An Assortment of High Frequency, Transistor Inverters/
Converters Utilizing Saturating Core Transformers
200.75 Optimizing Battery-Powered Transistor Inverter Design
201.25 A High Input Voltage Converter
5.

Miscellaneous Transistor

90.14 Tape Erase and Bias Oscillator

A Practical R-C Tone Generator System for Electronic
Organs

90.90

90.89

90.91

TV

System

2 Watt Amplifier Circuits

to

6.

Requiring

Minimum

Sound

Effect Generator

Rectifier Application Notes

200.1

TV Sound

451.138 Semiconductor Data Handbook

Converters and Inverters

92.4

Audio Amplifier Circuits

90.59 Low Cost Audio for Line-Operated Radio, TV, Phono-

Characteristics of

200.30 Capacitor Input

Diodes (Revision)

Common
Filter

Rectifier Circuits

Design

with

Silicon

Rectifier

Components
Audio Amplifier
General Applications of Thyristors

90.98 Monolithic Darlington Preamplifier

90.99 Medium Power Amplifier Circuits
90.100 High Power Audio Amplifier

And Tuning Circuits

90.76 Complementary Audio Outputs Make

Receiving

ance,

90.81

you

you may be ordered by publication number from: Inquiry Clerk, General

Dept., Bldg. #7, Mail Drop 49, Electronics Park, Liverpool, IM.Y. 13088.

Transistors

3.

Semiconductor Applica-

Company, Semiconductor Products

90.28 The Use of "y" Parameters in Transistor Circuit Design

90.30 Measurement of Stored Charge in High Speed Diodes
90.62 Y Parameters: Their Accuracy and Measurement
90.86 Transistor Models for CACD
200.52 The Characterization of Power Transistors to Avoid
Forward Bias Second Breakdown
200.56 On Switching Inductive Loads With Power Transistors
660.22 The Computerized Use of Transient Thermal Resistance
to
Avoid Forward Biased Second Breakdown in

2.

Electric's

tion Engineering Center, these publications give

uable solid state reference library.

TV

Low

Color

High Perform-

Using

High Voltage

Cost Audomobile Receiver

Difference

Amplifiers

Transistors

90.82 Video Output

Considerations

Using

High

Voltage

Transistor

90.86 Transistor Models for CACD

90.87 A Four Transistor Line Operated Radio Receiver
90.88 RGB Video Amplifiers for Color TV Offer High
Performance
90.97 Heatsink-Less RGB Amplifier for Color TV
200.63 Complementary Vertical Deflection Two Approaches
200.64 Horizontal Deflection Under Normal And Arcing

Liquid Cooling of Power Thyristors

Technological Trends

in

Power Semiconductors

Significant for Electric Vehicle Controls

Conditions

660.23 Using Improved Transistor Models

Analysis of a RGB Video Amplifier

90.24 A Ring Counter For Driving Incandescent Bulbs

90.58 Reversible Ring Counter Utilizing the Silicon Controlled Switch
90.94 The Complementary SCR
200.01 Semiconductor Application Information
Power Semiconductor Ratings Under Transient and
200.9
Intermittent Loads
200.19 Using Low-Current SCR's (Revision)
200.35 Using the Triac Control for AC Power (Revision)
200.48 Flashers, Ring Counters and Chasers (Revision)
200.54 Design of Triggering Circuits for Power SCR's
200.55 Handling & Thermal Considerations for GE Plastic
Power Devices
200.78 Application of General Electric SubscreteTM Devices
201.23 SCR-lgnitron Comparison

in

Computer-Aided

171

Ratings & Applications of Power Thyristors for

Resistance Welding

8.

201.28 Energy Dissipation in GE-MOVTM Varistors For Various Pulse Shapes

660.21 Take the Guesswork Out of Fuse Selection
660.24 Analysis and Design of Optimized Snubber Circuits for
dv/dt Protection in Power Thyristor Applications
660.28 Metal-Oxide Varistor: A New Way to Suppress Transients

General Phase Control Circuits

200.21 Three Phase SCR Firing Circuits for DC Power Supplies

200.31 Phase Control of SCR's With Transformer And Other
Inductive AC Loads
200.33 Regulated Battery Chargers Using the Silicon Controlled Rectifier

200.46

AC

Voltage or

Current Regulator

Featuring Closed-

Loop Feedback Control

201 6
'

Applications for

'

911

14.

Optoelectronic Applications

200.34 The Light Activated SCR

200.59 How to Evaluate Light Emitters

C106 Economy SCR

201.12 500-Watt AC Line Voltage and Power Regulator

201.14 Automatic Liquid Level Control
201.18 High Voltage Power Supply for Low Current Applications

&

Optical Systems for

Light Sensitive Silicon Devices

How to Use the Plastic Photodarlington Transistor

200.68 High Performance Circuits Using the Plastic Photo200.67

darlington
9.

Lighting Control

15.

200.18 Fluorescent Lamp Dimming With SCR's and Associated

Semiconductors
200.53 Solid State Incandescent Lighting Control

10.

Unijunction Applications
Unijunction
90.10 The
Applications

Characteristics

Transistor

and

90.16 Silicon Controlled Switches

90.57 Using the Silicon Bilateral/Unilateral Switch
90.68 The Silicon Unilateral Switch Provides Stable, Economical Frequency Division
90.70 The 2N6027 - A Programmable Unijunction Transistor

Motor Control
200.43 Solid State Control for DC Motors Provides Variable
Speed With Synchronous-Motor Performance
200.44 Speed Control for Shunt-Wound Motors
200.47 Speed Control for Universal Motors
201.16 Fan Motor Speed Control - "Hi-Intensity" Lamp

90.72 Complementary Unijunction Transistors

90.93 Optimizing PUT Oscillator and Timer Designs
671.13 Innovation for Circuit Simplification

Dimmer
16.

11.

12.

Temperature Control
200.61 A Zero Voltage Switching Temperature Control
200.70 Low Resistance Sensor - Zero Voltage Switching
Temperature Control
671.12 Optimum Solid-State Control Parameters for Improved
Performance of In-Space Electric Heating Systems

SCR

Inverter Circuits

200.49

A Low
Single

Ultrasonic-Frequency Inverter Using

Cost,

18.

Including

New

in

Converters and Inverters

Commutation
Commutated By An Auxiliary Impulse

&

Tunnel Diode Sinewave Oscillators

Applications for the

1N3712

Series

Tunnel Diodes

Test Circuits

201.3

Portable

201.27

DIAC

SCR and

Silicon Rectifier Tester

Test Circuit

Reliability

95.10

Soft

660.15 SCR Inverter

660.16 An SCR Inverter With Good Regulation
Output
671.21 Resonant Bridge Inverter

Diode Applications
Tunnel Diodes as Amplifiers and Switches
A Tunnel Diode R.F. Radiation Detector
Practical Tunnel Diode Converter Circuit Considerations

SCR

660.14 Basic Magnetic Functions

13.

17.

Tunnel
90.32
90.43
90.44
90.45
90.66

Report

On The

Reliability of General

junction Transistor Types, etc.

Sine-Wave

200.73 Testing GE-MOVTM Varistors

200.77 Detecting and Suppressing Nanosecond Wide Spikes
With GE-MOVTM Varistors

172

Electric Uni-

dated material

95.14 Unijunction Transistor Types 2N2646, 2N2647

95.29 Improved Triac Reliability Through Power-GlasTM
95.31 Reliability of Double Heatsink Diodes
95.37

Protection of Power Semiconductors

200.10 Overcurrent Protection of Semiconductor Rectifiers
200.60 GE-MOVTM Varistors Voltage Transient Suppressors
200.71 Using GE-MOVTM Varistors for Voltage Suppression
Due to Switching Inductive Load

GE

Unijunction Transistor Reliability

95.39 Guide to Designing for Reliability in Power Semiconductor Device Applications

95.43 Semiconductor Reliability Report
95.44 Reliability of General Electric GE-MOVTM Varistors
95.45 Plastic Encapsulated Signal and Power Transistor
Reliability

95.46 General Electric Meta-BondTM Diodes

671.14 What the Reliability of

Means To You

Plastic

Encapsulated Devices

MAJOR GENERAL

SEMICONDUCTOR COMPONENTS

ELECTRIC

NAME OF

CIRCUIT

COMMONLY USED

DEVICE

SYMBOL

JUNCTION
SCHEMATIC

MAJOR
ELECTRICAL CHARACTERISTICS

APPLICATIONS

Oplo Coupler
I

Output

Transistor

logic

normal

systems with other

power

transistor/Darlington excepi

logic systems,

LED current (I,. )

replaces the base drive (I

semiconductors and

that the

Darlington

:i)

Isolated interlacing of

characteristics are

identical to a

(HI1A, Hi 5 A)

),

(HllH.HJTilJ)

electro-mechanical devices.
Solid state relays.

Outputs

Op to (.'uupkT

With Anode voltage (+) the

SCR can be triggered with a
forward LED current, (Char-

St'H Output

rfa

(HIU'I

acteristics identical to a

normal

SCR

except that

current

(1,.

replaces gate

trigger current

AC

l,

LED

Isolated interfacing of
logic

systems with

AC

power switching functions. Replacement of

relays; micro-switches.

).

Input

Opto C"upli.r
(IU1AA)

Identical to a "standard"

Wt

transistor coupler except

that

LED

current can be of

either polarity.

Telecommunications
ring signal detection.

monitoring

line usage.

Polarity insensitive solid

state relay. Zero voltage

detector.

Silicon

ANODE

Controlled
Rectifier

(SCR)

HD

vANOOE

VANODE

^7

Complementary

ANODE

Silicon

Controlled

(-)

<+

triggered by

to

SCR

VAC

(CSCR)

Phase control

Choppers

Ring counters

Low speed

ga:

Rectifier

Power switching

1^,

remaining in conduction
until anode I is reduced
to zero

Polarity complement

ANODE

GATE

With anode voltage

SCR can be
< + ),

L,_

logic

Lamp driver

(-)

VAC

(+)

f
Light
Activated

ANODE

SCR*

1&,L9

vAWODE

CATHODE ylj*

'

(-1

Operates similar to
SCR, except can
also bo triggered
into conduction by
light falling on
junctions

L
Yanode

Operates similar to

SCR

\m
H

JL

Yanode

1 ANODE

Silicon

GATE

Bilateral

applications

Logic applications

Counters
Nixie drivers

Lamp

drivers

modes

of operation

CATHODE

Unilateral
(SUS)

(->

except can also

be triggered on by a
negative signal on
anode -gate. Also
several other
specialized

Silicon

Switch

Photoelectric

Slave flashes

Controlled
Switch*

YANODE

ment
Position controls

(+1

Silicon

(SCS)

Relay Replace-

ANODE

(+)

LJU

1 ANODE 2
2

Switch

.L

(SBS)

v ANO0E

\d\jj
vANODE2(-)

JS>

GATE

ANODE

2W

Yanode 2(+)

Similar to SCS but

zener added to
anode gate to trigger
device into conduction at *\ 8
volts. Can also be
triggered by negative
pulse at gate lead.

Switching Circuits

Counters
SCR Trigger
Oscillator

Symmetrical

Switching Circuits

bilateral version of

Counters
TRIAC Phase

the SUS.

down

in

Breaks
both

Control

directions as SUS
does in forward.

Operates similar
SCR except can

AC

be triggered into
conduction in either
direction by ( + ) or ( -)
gate signal

Phase control
Relay replacement

When

Triac and

switching

to

Diac
Trigger

voltage

reaches trigger
level (about 35
volts), abruptly

switches down
about 10 volts.

173

SCR

trigger

Oscillator

MAJOR GENERAL
NAME OF

CIRCUIT

DKVICE

SYMBOL

CE-MOV

ELECTRIC

SEMICONDUCTOR COMPONENTS
MAJOR

COMMONLY USED

When exposed

Varislor

to high energy

transients, the varistor impedance changes from a high

Voltage transient
protection

standby value to a very low

conducting value, thus clamp-

High voltage sensing

to a
ing the transient voltage

Regulation

sale level.

Conducts easily

anode
I

APPLICATIONS

ELECTRICAL CHARACTERISTICS

JUNCTION
SCHEMATIC

Rectification

in

one direction, blocks

in the other

II,

ANODE

Blocking
Detecting

vANO0E

(-)

vANO0E
|

CATHODE

Steering

CATHODE

_L
POSITIVE

POSITIVE

ELECTRODE

ELECTRODE

Displays negative
resistance when
current exceeds
peak point current

UHF

converter

Logic circuits
1^

Microwave
circuits

$)

Level sensing

NEGATIVE

NEGATIVE

ELECTRODE

ELECTRODE
Back
Diode

vANODE

Similar characteristics
to conventional diode
except very low forward

Microwave
mixers and
low power

voltage, drop

oscillators

Constant collector
current for given
base drive

Amplification

CATHODE

COLLECTOR

n-|)-n
l'l'ansisto

COLLECTOR

Switching
Oscillation

"-"%

COLLECTOR

Transistor

COLLECTOR

vCOLLECTOR

(+)

Collector

Complement

Amplification

to

n-p-n transistor

Switching
Oscillation

BASE
IB

EMITTER

Unijunction

Transistor

BASE

(UJT)

1 COLLECTOR (-)

Unijunction emitter
blocks until its
voltage reaches V
then conducts

Interval timing

Oscillation
;

<D

Level Detector

SCR Trigger

Complementary

Functional comple-

Unijunction

ment

to

UJT

Transistor

High stability
timers
Oscillators and

(CUJT)

level detectors

^-A
T

Programmable

fcJ

j^*
Uaa^ww

Unijunction

Transistor

GATE

(PUT)

by two
Programmed
Pro & r
stors for V pf
resist

Low cost timers

and oscillators

Function
D
equivalent to

Long period timer

normal UJT.

SCR

iv

trigger

Level detector

CATHODE

Vac

COLLECTOR

Pholo
Transistor

I COLLECTOR

Incident light acts

Tape readers

as base current of
the photo transistor

Card readers
Position sensor

Tachometers

B *

EMITTER

VC E

174

GENERAL ELECTRIC WORLDWIDE ELECTRONIC COMPONENTS SALES OFFICES

ALABAMA
ILLINOIS
NEW YORK
Huntsville
3322

S.

Suite

35801
Memorial Pkwy.

Area Code:

205

Chicago 60641

3800

Milwaukee Ave.
Area Code: 312
777-1600
N.

883-9220

Phoenix 85016
5320 North 1 6th
Area Code: 602
264-1 751

Ft.

Wayne 46805

2109
St.

CALIFORNIA
90064
11840 W. Olympic Blvd.
Area Code: 213
Los Angeles

479-7763

E. State Blvd.

Area Code: 219

482-4557

Suite

223

MICHIGAN

COLORADO

Southfield

201 University Blvd.

Mailing Address:
P.O. Box 2331, 80201
Area Code: 303
320-3031

CONNECTICUT
Bridgeport
1

06602

Area Code: 203

334-1012

DISTRICT OF COLUMBIA
(Washington)
Falls Church, Va. 22043
7777 Leesburg Pike
Area Code: 703
790-1 700

FLORIDA
North Palm Beach 33408
321 Northlake Blvd.
Suite 101
Area Code: 305

844-5202

3201

Bldg. 1, Room
Electronics Pk.

227

456-2196

NORTH CAROLINA
Greensboro 27408
1828 Banking St.

48075

P.O.

Box 9476

24681 Northwestern
Area Code: 313
355-3552

Area Code: 919

273-6981

MINNESOTA

OHIO

Minneapolis 55435
4900 Viking Dr.

Cleveland 44132
26250 Euclid Ave.
Area Code: 216
266-2900
Dayton 45439
3430 S. Dixie Highway

Room 108
Area Code: 612

835-2550

285 Boston Ave.

Building 28-CE

921-4134
S.

Area Code: 315

1 Washington St.
Area Code: 617
237-2050

Area Code: 415

Denver 80201

Room 304
Area Code: 412

Syracuse

MASSACHUSETTS

MISSOURI

Mailing Address:
P.O. Box 2143
Kettering Branch

Kansas City 64105

911 Main St.
Suite

Area Code: 816

221 -4033
Louis 631 32
1530 Fairview St.
Area Code: 314

429-6941

NEW JERSEY
Fairfield

45429

OKLAHOMA

St.

07006

420 Route 46

TEXAS
Dallas 75240
6530 LBJ Freeway
Suite 119-B
Area Code: 214
661-8582

Houston 77036
7011 S.W. Freeway
Suite

106

Area Code:

71

777-3443

VIRGINIA

Area Code: 513

298-031

518

15220

681-0900

3000 Winton Rd.,

Area Code: 716
461-5400

Area Code: 317

923-7221

493-2600

Pittsburgh

3 Parkway Center

Area Code: 516

Rochester 14623

Indianapolis 46208
N. Meridian St.

3750

Wellesley 02181
Palo Alto 94304
1801 Page Mill Rd.

(Philadelphia)

Wayne 19087
999 Old Eagle School Rd.
Area Code: 215
962-1 500

New York City call:

Jericho 11753
400 Jericho Tnpk.

INDIANA

ARIZONA

Albany 12205
11 Computer Dr., W.
Area Code: 518
458-7755

2/77

Waynesboro 22980
Suites 19 and 20
Skyline Motor Court
Rt. 250 East
Area Code: 703
943-1151
Portsmouth 23707
808 Loudon Ave.
Area Code: 804
397-8752

WASHINGTON
Seattle
1

98188

12 Andover Park,

E.

Box 88850,98188
Area Code: 206
575-2866
P.O.

Oklahoma City 73112

3022 Northwest Expressway
May-Ex Building
Room 412
Area Code: 405
943-9015

WISCONSIN

PENNSYLVANIA

271-5000

Milwaukee 53202
E. Michigan St.
Area Code: 414

615

Erie 1 6531
Building 63-2

Area Code: 201

227-6050

1100 Lawrence Pkwy.

Area Code: 814

455-5466

AFRICA

CANADA

S.A. General Electric (Pty) Ltd.

P.O. Box 24

Canadian General Electric Co.

Maitland 7405
R.S.A.

189 Dufferin

St.

INDIA

MEXICO

Elpro International Ltd.

Producer Goods Dept.
Nirmal, 17th Floor

General Electric De Mexico, S.A.

Apartado 53-983
Marina Nacional No. 365
Mexico 17 D.F.
Tel: 545-63-60

Toronto, Ontario, Canada

Area Code: 416
Tel: 537-4481

Nariman Point, Bombay 400 021

Tel: 292471

S.A. General Electric Ltd.

P.O. Box 1482

ENGLAND

IRELAND

SINGAPORE

Capetown, R.S.A.
Tel: 51-1251

International General Electric

Company of New York, Ltd.

Electronic Trading Co.

General Electric (USA) Asia Co.

Cathay Building, Suite 104

AUSTRALIA

Park Lome,
111 Park Rd.

Australian General Electric Ltd

London NW87 JL

86-90 Bay

Tel:

Tel:

511251

St.

Ultimo, N.S.W., 2007

Tel:

212-3711

01-402-4100

AUSTRIA
General Electric Technical

42 Avenue Montaigne

BELGIUM
General Electric Company (USA)
Chaussee De La Hulpe 150

B-1170 Brussels
660 20 10

Paris-8 e
Tel: 225-52-32

Elettricita S.P.A.
Via Pergolesi 25
20124 Milan

Tel:

202808-203208

JAPAN

General Electric Germany

Postfach 2963
Eschersheimer Landstrasse 60-62
6000 Frankfurt/Ma 1
Tel: (06111-15641

Tel:

Singapore, 9

SPAIN

Compagnia Generale Di

Tel:

GERMANY

Orchard Road

International General Electric

Company of Spain, S.A.
Edificio Espana Apartado 700

ITALY

FRANCE
General Electric Technical Service
Company Inc., France

Service Company, Inc.

East Central Europe Liaison
Peter Jordan Strasse 99
A-1180 Vienna, Austria

The Demesne
County Louth
Dundalk
Tel: (042) 32371

Avenida Jose Antonio 88

Madrid
247.16.05

SWEDEN
International General Electric
Fack, Tritonvagen 27
17120 Solna

General Electric Japan, Ltd.

Tonichi Bldg., 5th Floor

Sweden

2-31, Roppongi,

Tel:

6-Chome,
Minato-Ku
Tokyo, 106 Japan
Tel: 03-405-2920

081 730 07 40

VENEZUELA
General Electric De Venezuela S.A.
Sabana GrandeCaracas

175

AB

i
!

Silicon

1N248-50.A.B

Rectifier
10A & 20A Types

These stud mounted diffused junction silicon rectifiers are

designed for all rectifier applications in
the 10 to 20 ampere range. A high junction
temperature rating and an extremely low forward
voltage drop and thermal impedance permit high
current operation with minimum space requirements^ These rectifiers may be mounted directly to a chassis
or a fin or may be electrically insulated from the heat sink by using the mica washer
insulating kit

General Electric research advanced development and product

design have resulted in a highly efficient rectifying junction. This
feature plus a mechanical design employing high temperature
hard solders and welds for all internal and external joints and
seals, which eliminates common sources of thermal
fatigue failure, has produced a silicon rectifier with outstanding
reliability
under all operating conditions.

electrical ratings

and specifications

<> CPS, Resistive or Inductive Load)

1N248 1N249 1N250 1N248A 1N249A 1N250A 1N248B 1N249B* 1N250B*

Max. Allow. Peak
Reverse Voltage (Repetitive,

65Cto+175C)*
Max. Allow. Peak Reverse Voltage
(Repetitive at 25C)*
Max. Allow.

RMS

Max. Allow.

DC

Voltage

Blocking Voltagef

Max. Allow. Forward Current

(Single Phase or Three Phase
150C stud temp.)

Peak Recurrent Forward Current

Max. Allow. Peak One-Cycle
Surge Current

50

100

200

50

100

200

50

100

200

50

100

200

50

100

200

55

110

220

Volts

35

70

140

35

70

140

35

70

140

Volts

50

100

200

50

100

200

50

100

200

Volts

10 Amp DC*

45

-*200 Amp-H

Amp DC-

90 Amp

Amp DC 90 Amp

350 Amp

-20

Amp

-20

350

Amp

Max. Full Load Voltage Drop

(Tj = 25C)

At25A
At50A

*-1.5 Volts
1.5 Volts

Max. Leakage Current at Full Load

(Single Phase, Full Cycle Average, 150C stud temp.)

-1.5 Volts-

5 milliamp

Junction Operating and Storage

Temp. Range

Maximum Stud Torque

Maximum
tMaximum

-65Cto+175C
30 inch-pounds.

voltages apply with a heat sink thermal resistance of 12C/watt or less at maximum
rated junction temperature.
voltages apply with a heat sink thermal resistance of 5C/watt or less at maximum
rated junction temperature.

201

Volts

1N248-50, A, B
OUTLINE DRAWING
111

INSULATING

400

uj

HARDWARE

300
1 200
H 100
1 50
ac
3
O
10
i
o

DIRECTION OF EASY CONVENTIONAL

KIT*

CURRENT FLOW
420

li-

en
TYPICAL INSTANTANEOUS
FORWARO VOLTAGE DROP

o
ui
weight .5

NOTE

1:

Unit

NOTE

2:

Mica washer

in

oz.

mounting

kit

2
CO

may

add approx 2.5C/wart thermal resistance

stud to heatsink.

.5

Complies with EIA registered outline DO-5

1.5

1.0

2.0

2.5

3.0

-Available upon request

INSTANTANEOUS FORWARD
VOLTAGE DROP-VOLTS
TYPICAL FORWARD CHARACTERISTICS

^X
---.

IN249

IN248
14

N24B4
N248E

N249J
N249C

^y

"\

in:

50^.

- IN2 50A IN2 SOB

UJ

io

>
kU

Ifl

\
"-

N
_

SINGLE PHASE

OR THREE PHASE

o
S

-^i

10

20

00
VOLTS
VOLTS
VOLTS
1

SIX

100

ISO

L_
\

200

2.

x
\

250

AVERAGE FORWARD CURRENT-AMPERES

INSTANTANEOUS REVERSE VOLTAGE - VOLTS

MAXIMUM LEAKAGE CURRENT

JU NOTION TEMPERATURE: -65"C T0I7S*C

SO

AS A FUNCTION Of
FORWARD CURRENT
FOR INZ48.INZ49.IN290.

\\

PHASE

USE CURVES BEYOND

IN24S, IN24SA AND IN248B
IN249, IN249A AN ) IN24 9B
IN250, IN2S0A AN ) IN2S OB

NOT
FOR
FOR
FOR

MAXIMUM ALLOWABLE

REVERSE CHARACTERISTICS

3.

MAXIMUM ALLOWABLE STUD TEMPERATURE

1N248, 1N249, 1N250

-SING LE PH SE
OR Tt (REEP HASE

MAXIMU M ALLOWA 9LE

CURRENT AT
RATED LC AD C0NDI1 IONS
SIX P HASE

IN248
IN249
IN250

HAXIMU M ALL OWABL E STU 3

IN24SA,

120

FUNCTION OF FORWARD

CURRENT FOR 1N248A.

110

N249B

IN2SI )B

100

10

15

20

AVERAGE FORWARD CURRENT - AMPERES

4.

CYCLES AT SO CPS

MAXIMUM ALLOWABLE STUD TEMPERATURE

1N248A, 1N249A, 1N250A
1N248B, 1N249B, 1N250B

5.

202

IN248B

IN249A, IN249B
IN250A, IN 2 SOB

SURGE RATING

Silicon

1N248C-50C
1N1195A-98A

Rectifier
20 A Types

These stud mounted diffused junction silicon rectifiers are designed

for all rectifier applications in the 20 ampere range. A high junction
temperature rating and an extremely low
forward voltage drop and thermal impedance permit high
current operation with minunum space requirements. These rectifiers may be mounted directly to a chassis
or a
fin or may be electrically insulated from the
heat sink by using the mica washer insulating

General Electric research, advanced development and product

design have resulted in a
highly efficient rectifying junction. This feature, plus a
mechanical design employing
high temperature hard solders and welds for all internal
and external joints and seals
which eliminates common sources of thermal fatigue failure, has
produced a silicon rectifier with outstanding reliability under
all operating conditions.

electrical ratings

and specifications

(60 cps, Resistive or Inductive Load)

1N248C 1N249C 1N250C 1N1195A 1N1196A 1N1197A 1N1198A

Max. Allow. Peak Reverse
Voltage (Repetitive)*

Max. Allow.

RMS

Max. Allow.

DC

Voltage

55

110

220

300

400

500

600

Volts

39

77

154

212

284

355

424

Volts

50

100

200

300

400

500

600

Volts

Blocking

Voltage**

Max. Allow. Forward

Current (Single Phase or
Three Phase -150C
stud temp.)

20

Amp DC

Peak Recurrent Forward

Current

Max. Allow. Peak One-Cycle

Surge Current
^
Max. Full Load Voltage
Drop (Full Cycle Average
when operated at Max. I nr
and PRV)
<

90

- 350

Amp Amp -

->

->

0.6 Volts

Max. Leakage Current at

Full Load (Single Phase,
Full Cycle Average,
150C stud temp.)

3.8

Junction Operating and

Storage Temp. Range

Maximum

**tempe rat urr

3.4

3.2

<

Stud Torque

TempZlZrl

3.6

2.5

2.2

-65Cto +175C

1.5

ma.

~>

30 inch-pounds.

ltaeeS 3PPly

WHh

* he&t Sink thermal resistance of

or less at

maximum

rated junction

ltageS 3PPly

* h6&t Sink thermal resistance of 5C/watt or less at

maximum

rated junction

203

WC/watt

1N248C-50C

1N1195A-98A

OUTLINE DRAWING
DIRECTION OF EASY CONVENTIONAL

CURRENT FLOW

NOTES'- (I)UNIT WEIGHT-. 5 OZ.

APPROX 2.5 "C /WATT
(2) MICA WASHER IN MOUNTING KIT MAY ADD

THERMAL RESISTANCE STUD TO HEATSINK

^AVAILABLE UPON REQUEST.

COMPLIES WITH
EIA REGISTERED OUTLINE DO-5

IO

MAXIMUM LEAKAGE CURRENT

JUNCTION TEMPERATURE 25"C TO I75-U
B

IN24 8C
IN249C
f

INII95A

INII96A

INII97A

INII98A

200

300

400

600

500

INSTANTANEOUS INVERSE VOLTAGE-VOLTS

II.

.5

I.0

INSTANTANEOUS

I.

TYPICAL

REVERSE CHARACTERISTICS

2.5
I.S
20
FORWARO VOLTAGE DROP- VOLTS

FORWARD CHARACTERISTICS

MAXIMU M ALLOW* BLE

SURGE CURRENT AT _
RATED LCD CONDI riONS
:

SIN LE PH VSE
HREEP>HASE

"OR
^-"~ s X PHAS

4
AVERAGE FORWARD CURRENT- AMPERES

III.

MAXIMUM ALLOWABLE STUD TEMPERATURE

IV.

204

6
8 IO
CYCLES AT 60 CPS

20

SURGE RATING

Silicon

Diodes
1N914,A,B

1N916,A,B

1N414M9
This family of General Electric silicon signal
diodes are very high speed switching diodes for
computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar structure. This structure makes
possible a diode having high conductance, fast
recovery time, low leakage, and low capacitance
combined with improved uniformity and reliability. These diodes are contained in two different
packages; double heat sink miniature package,
and milli-heat sink package.

1N4154

1N4446-49
1N4531

1N4536

They are electrically the same as their

equivalent types in each of the two different
packages (see page two for groupings of electrically equivalent types in each of the two
packages)

PLANAR EPITAXIAL PASSIVATED

with Controlled Conductance
DOUBLE HEATSINK DIODE (DHD)

MIU.I-HEATSINK DIODE (MHD)

1N4531, 1N4536

1N914,A,B; 1N916.A.B*
1N41 48,49,54; 1N4446-49

0022
0018

T~
075

V^
032002

DIA

i.002
302 DIADIA

CATHODE END

Dissipation:

ALL DIMENSIONS

500mW

2.85mW/C

FEATURES
Reverse Recovery Time of 4 nanoseconds
Capacitance of 2 pF
Capacitance of 4 pF

maximum

mW

Power Dissipation to 250

mW

all

INCHES

NOTE: ALL DIMENSIONS

Tj

1HS14
1N914A
1N914B

MIL-S-19500C requirements

Dissipation:

25C
200C

1N4148
1N4446
1M4448
1M4531

Derate:

maximum

SOOmW

2.85mW/C

1N91B
1N916A
1N916B

1N4149
1N444T
1N4449

25C
200C

HEATSINK
SPACING

THERMAL

DISSIPATION

FROM END

RESISTANCE

AT25 - CmW

Figure

205

STATE

(NOTE

(NOTE 2)

1)

MHD

DHD

MHD

DHD

.062"

.230

.250

760

700

.250"

.319

.319

550

550

.500"

.438

.438

400

400

POWER

X/mW

BODY

Tj

OF DIODE

25C free air

for temp, above

STEADY

INCHES

1N453S
1N4154

IN

amb. based on max.

maximum

maximum

Power Dissipation to 500

Meets

IN

25C free air

for temp, above

amb. based on max.

Reverse Recovery Time of 2 nanoseconds

CATHODE
:athode ENDend-^

NOTE

Derate:

'

060
i_

NOTE

NOTE

See Figure 7 for thermal resistance for short pulses.

This power rating is based on a
maximum junction temperature of
200C.

1ISI4536

1N914, A, B

1N4154

1N916, A, B

1IM 4446-49

1N4148, 49

1N4531

absolute

maximum

(25C)

ratings:

(unless otherwise specified)

MHD & DHD

Voltage

MHD

& DHD
25
Volts

75

Reverse
Current

Average

Rectified

Recurrent Peak Forward

Forward Steady-State DC
Peak Forward Surge (Vsec. pulse)

150
450
200
2000

150
450
200
2000

mA
mA
mA
mA

500

500

mW

Power

Dissipation
Temperature
*

Operating
Storage

<

(25C)

electrical characteristics:

Maximum

Type

If

Volts

mA

75V

Vf

Co"'

t (2)

25C

150C

25C

nA

A.A

ma

pF

ns

1N914
1N4148
1N4S31

100

10

1.0

25

50

1N914A
1 N4446

100

20

1.0

25

50

1N914B
1 N4448

100

50

1N916
1N4149

0.62-0.72

1.0

100

10

1.0

25

50

1N916A
1 N4447

100

20

1.0

25

50

1N916B
1 N4449

100

25

50

5
}

0.63-0.73
)

1N4154
1 N4536

35

5/j.A

30

1.0

30

1.0

25

(4)

Vt

100

C
C

Reverse

20V

+200+200-

Current, Ik

Voltage

Voltage
IOOjuA

to
to

(unless otherwise specified)

Forward

Minimum
Breakdown

-65
-65

2.5

2.5

100

100

@ 25V

(a)

25V

*Except as noted.

NOTES

(1)

Maximum
Vr

(2)
(3)

Capacitance

measured on Boonton model 75A capacitance bridge at a signal

is

Maximum Reverse Recovery Time, It = 10mA, Vr = 6V, R L = lOOfi,

Maximum Forward Recovery Voltage, 50mA peak square wave, 0.1
tion rate, generator rise time

(4)

Also 3 M A at 20

mV

at

kHz

repeti-

40 TYPICAL FORWARD VOLTAGE

+ 3jU.SEC

30nsec.

/ /

ZZ7L-

AFTER APPLICATION
20 OF CURRENT

(t r )

Recovery to 1.0mA (Figure 6)

Msec, pulse width, 5 to 100

100C

at

80
60
MEASURED 25

50

level of

TYPICAL REVERSE CURRENT CHARACTERISTIC (25C)

//

/
i

10
8
6
E

i_

z
S=

.8

i
<
*
o

/
/l50*C

IN4446

IN

rt
ZL

4148

IN 4149

IN4446
IN4447
IN4448
IN4449

IN453I

IN453I
IN 4536

1
FORWARD VOLTAGE

-V..

IN 316, A,

LIN4449

.08
6

.02

IN4I49

1-3 >'C

/25' C

IN9I4.A.B
IN9I6.A.B

.04

-VOLTS

REVERSE VOLTAGE

Figure 2

Figure 3

206

Vdc

1IM4154

1N916,A,3

1N 4446-49

1IM4148, 49

1IM4531

600

1N914, A, B

1N4536

400
2.4

200
TYPIC AL REVEfl SE CURRENT
VS. T IMPERATU RE ALL TYPES

2.3

100

\\

2.2

80

IN9I4.A.B

>v

IN4I48
IN4I54

\ \N4b36
!K?5f
XIPI*tOoI

IN9I4 ,A,B
IN9I6 ,A,B

TYPICAL CAPACITANCE
we

REVERSE VOLTAGE

IN9I6,A,8
IN4I49

IN4447
IN4449

IN4447
IN4449
IN453I
IN45^fi

^~

Figure 5

MAXIMUM TRANSIENT
THERMAL RESISTANCE
(HEATSINK SPACING 0.25 0"

*
E

UJ

z
<

c/>

0.6

<
<r

uj

0.4

UJ

TEKTRONIX
TYPE 110 OR
PULSE
GENERATOR

^IN9I4,A.B

TEKTRONIX
TYPE N
SAMPLING PLUG

III

IN

UNIT

RISE TIME

RISE TIME

S.5NS

S.6NS

LOW CURRENT

rr

LT

IN4447
IN4448
IN4449

TEST CIRCUIT

DURATION OF PEAK SQUARE WAVE

FORWARD POWER PULSE -SECONDS

Figure 6

Figure 7

3.0

^TYP CAL
2.0

TYFMCAL 7 EM 'EF (A rURE

COEF FICIEN T (/U-L. T YPES)

>
o

IN9I6.A.B

IN4I48
IN4I49
IN4I54

1.0

.01

10

IN

mA

Figure 8

207

100

1N4536

1N914, A, B

1N4154

1N916, A, B
1N4148, 49

1N446-49

1N4531
I

If

TYPICAL VARIATION OF EFFECTIVE

LIFETIME IT) WITH FORWARD
(

50mA,

U-L TYF ES)

Xs

/A

40mA
30mA

CURVE FOR DETERMINING REVERSE

(ALL TYPES)

20mA

10mA

V-*-

"

\^ ^
>v*
\

Lg

VS I. '*

'

\ >

v\

----.
--,

0.6

75
100
125
150
-25
25
50
AMBIENT TEMPERATURE -TA - DEGREES CENTIGRAOE

Figure

t/r

Figure 10

ESTIMATION OF REVERSE RECOVERY TIME UNDER VARIOUS DRIVE CONDITIONS

The reverse recovery time of a silicon signal
diode has been shown* to be determined by
a quantity called the effective lifetime, t, and
the ratio of forward and reverse current.
The exact equations expressing times t and
t b (as denned in the sketch at right) are
somewhat inconvenient for numerical evalution, but in many cases an estimation of
response time is sufficient. Figure 10 is a
graphical solution to the response time equations and its use can best be illustrated by
the following example
FIND:

TIME

^^

/I
*-

mA

reverse current
reverse current is 20 mA.

Recovery time to 5

maximum

when

fl

H*-t b -{

the forward current

is

25

mA

and the

SOLUTION: Enter the left side of Figure 10 at In/It = 20/25 = 0.8 and follow horizontally until the
horizontal axis, it
t vs. Wit line is reached (see dotted line) From the t/r scale of the
estimated
by moving
is
curve
the
recovery
is seen that t. is 0.28t. The t b portion of
0.2 line is
5/25
downward parallel to the general contour lines until the Wit
reached. The total switching time is thus 0.46t. The delay time, t b is 0.46t 0.28t or 0.18r.
variation of
t on the spec sheet should be corrected for current level. Figure 9 shows the typical
.

The value

of

forward current. Since the current level of the example

approximately (6.8) (1.35) or 9.3 nsec, therefore:

effective lifetime with

lifetime is

(.28)

(.18) = 1.7 nsec.

Total reverse recovery time <= 4.3 nsec.

25

mA,

the

maximum

effective

2.6 nsec. maximum

t. s= (9.3)

= (9.3)

is

maximum

maximum

Additional information on this method of diode recovery time calculation is contained in a paper entitled
"Predicting Reverse Recovery Time of High Speed Semiconductor Junction Diodes" by C. H. Chen, (Publication
#90.36) available on request.

W. H., "The Reverse Transient Behavior of Semiconductor Junction Diodes,"

1961, pp. 123-131.
*Ko,

208

IRE

Trans. ED-8, March

1N1183-90

Silicon

1N3765-68

Rectifier

1N5332

These diffused junction rectifiers are intended to be applied under the most
stringent Military environment. The glass seal is specially designed to give a
reasonable creepage distance at voltages through 1200 volts. The all hard-solder
construction used in the assembly of these devices will promote long thermal
fatigue free life even under cyclic load conditions.

New High

Features:

Up To 1200V

Voltage

Thermal Fatigue Free

Popular

Uses Hard-Solders

JEDEC DO-5 Outline

Ratings up to 200C Junction Temperature

Available in Reverse Polarity

&

ratings
*

1N3768

1N5332

Allowable Repet-

and

Working

Peak

V SM

(rep)

Reverse Voltage,

&Vm (wkg.)
Maximum Allowable RMS
1

Voltage,

(60cps, Resistive or Inductive Load)

1N1183 1N1184 1N1185 1N1186 1N1187 1N1188 1N1189 1N1190 1N3765 IN3766 1N3767

Maximum
itive

Specifications

*Maximum

VH

100

150

200

300

400

500

600

700

800

900

1000

1200

volts

35.5

71

106

142

212

284

355

424

495

565

635

710

852

volts

40

80

120

160

240

320

400

480

700

800

900

1000

1200

volts

DC

Allowable

Blocking Voltage,

50

*Maximum

Allowable Average Forward Current (180

conduction angle, 60 cps,
half sine wave current at
T c = 140C), I

35 Adc-

*Maximum Allowable Peak

One Cycle Surge Current
(non-recurrent)

,I F m

.500-

(surge)

f 500 amperes

400

Ft Rating

(for t greater than

.001 sec. and less than .0083

sec, non-recurrent)

500

(Amp RMS)

Sec min. value, See Chart 6

*Maximum

Peak Forward
Voltage Drop (I n = 35 Adc

atTc
*

140C), Vfuv)

Maximum Average
Current

(Io

1.7

Case,

Junction

10

10

10

10

10

10

10

10

1.0

1.0

1.0

1.0

1.0

1.0

1.0

mA

to

Rue

1.0

1.0

1.0

Junction Operating & Storage Temperature Range, Tj

& T.
Stud Torque
1

Vdc

Reverse

35 Adc at

T c = 140C),I e< av>

Maximum Effective Thermal
Resistance

ir 1.7*

1.8

-65 C

to

+200C

-30 inch pounds (35K e -cm)

Maximum

voltages apply with a heat sink thermal resistance of 10C/w or less at

voltages apply with a heat sink thermal resistance of 5C/w or less at
NOTE Case temperature is measured at the center of any one of the hex flats.
The asterisk denotes JEDEC (EIA) registered information.

^Maximum
:

209

maximum
maximum

rated junction temperature.

rated junction temperature.

1.0

1.0

1.0

c/w

1N5332

Nil 83-90

OUTLINE DRAWING

1N37 65-68
DO-5
SYMBOL

MILLIMETERS
NOTES
MIN.
MAX.

INCHES
MAX.

MIN.

.450

.375

9.53

.080

2.03

.667

.687

16.94

17.45

.115

.200

2.92

5.08

Fl

.060

PLANE
NOTES:

1.52

1.000

16.94

11.43

.667

<f>0

TERM.

COMPLETE THREADS TO EXTEND TO WITHIN 2-1/2

THREADS OF SEATING PLANE.
2. ANGULAR ORIENTATION OF TERMINAL IS UNDEFINED.
3. 1/4-28 UNF- 2A. MAXIMUM PITCH DIAMETER OF PLATED
THREADS SHALL BE BASIC PITCH DIAMETER (.2268", 5.74MM)
REF. (SCREW THREAD STANDARDS FOR FEDERAL SERVICES
1957) HANDBOOK H28 1957 PI.

25.40

I.

3.96

.156

4>M

.220

.249

5.59

.422

.453

10.72

11.51

*t

.140

.175

356

4.45

6.32

1,3

4.

MINIMUM FLAT.

EIA-NEMA STANDARD OUTLINE, NEMA SK-51 - EIA RS-241.

INSULATING HARDWARE IS AVAILABLE UPON REQUEST.
5. FOR REVERSE POLARITY TYPES ADD THE LETTER
R,

EXAMPLE;

INII83R.

1000

800
600

-^- v w
-7* V- r^-

^"

400
200
100
co
UJ

80
60

40
S
a.
20
TJ= 200" c

UJ
a.
a.

10

=>

8.0

6.0

Tj = 2 5C

tc

4.0

01

2.0

1.0

0.8
0.6

0.4

.$ 0.2

0.1

0.08
0.06

j-

0.04

0.02

0.01
1.0

2.0

1.5

2.5

3.0

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

1.

MAXIMUM FORWARD
210

CHARACTERISTICS

3.5

1N1 183-90
<8
3E

1N3765-68

Li

t-

INII83"'"*

LI

50

IC0

INII85

150

INII87

INII88

200

INII89

INII90

300

400

500

600

200

300

400

500

0=

to
o:

u4

IN3765

IN3766

700

800

700

800

IN3767 IN3768
900
1000

IN 5332

IN53
120

UJ

to

O
o
UJ c
z

//

to

50
100

a.

vR

600

900

1000

1200

1100

INSTANTANEOUS REVERSE VOLTAGE -VOLTS

2.
3#

T.,

TYPICAL REVERSE CHARACTERISTICS

= 200C FOR VARIOUS VOLTAGE GRADES

u
r

/
/

35
z
o

5 30
a.

N^

oc
/

>s

//

25
'
/

//

/ //

%
u.

4
X
I

'/

0.

61<

3<
140
l

DC

10

IF(AV) average forward current-amperes

4.

AVERAGE CURRENT RATING AS A FUNCTION OF

CASE TEMPERATURE

'F(AV)

3.

AVERAGE FORWARD CURRENT- AMPERES

AVERAGE FORWARD POWER

AS A FUNCTION OF AVERAGE FORWARD CURRENT

Tj
183

^^<T AH D

TO

= 200C
IN

1190

IN5332

CURVE APPLIES FOLLOWING

ANY RATED LOAD CONDITION

IN3765 TO
IN3768

CURVE APPLIES FOLLOWING AHY BATED LOUD CONOITION

ALL TYPES

"

SURGE CUH1ENT PULSE O

6.

NON-RECURRENT FORWARD CURRENT SURGE

CURVE, SUBCYCLE

NO.

5.

OF CYCLES AT 60 CPS

NON-RECURRENT FORWARD CURRENT

SURGE CURVE, MULTICYCLE
211

1N 11 83-90
35

I'^S -MAXIMUM

CURRENT RATING

1N3765-68
I

1N5332

RENT RATI

10

^^N
^ N: ^
FREE CONVECTION COOLING

NOTES
5

(2)

FIN EMISSIVITY > 90%

MIN FIN SPACING 0.7 INCHES

(3)

DIODE

(I)

-MAXIMUM 6 CURRENT RATING

iTs^

6?~

& >\

^S

^J

^o

MOUNTED AT CENTER OF FIN

m FIN MOUNTED VERTICALLY OR PARALLEL TO AIR

FORCED CONVECTION
COOLING-IOOO FT/MIN

^
n:

-J

STREAM

\\

TA AMBIENT TEMPERATURE--C

7.

CURRENT RATING FOR DEVICE MOUNTED

ON 5"x5"x.050" COPPER

FIN

ENT TEMPERATURE-*C

8.

CURRENT RATING FOR DEVICE MOUNTED ON

D4 D6D8J

.2

6 IO

2Vi" x 2Vi" x .043"

2.0

4.0

COPPER FIN

SO J

1
PEAK SQUARE WAVE POWER "ON TIME-SECONDS

9.

TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE

212

1N1195 SEE PAGE 203

Silicon

1N1199A-1N1206A

Rectifiers

1N1199RA-1N1206RA

1N3670A-1N3673A
1N5331
These diffused junction rectifiers are designed specifically to provide high
performance for applications up to 22 amperes Average Forward Current in single-phase
applications with repetitive
peak reverse voltages of 50 through 1200 volts. High junction temperature
rating plus low forward drop and thermal impedance permit high current operation with minimum space
requirements.
General Electric research, advance development and product design have
resulted in a highly
This feature, plus a mechanical design employing high-temperature
hard solders and welds for all internal and external joints and seals, which
eliminates common
sources of thermal fatigue failure, have produced a silicon rectifier with
outstanding reliability
under all operating conditions.
efficient rectifying junction.

FEATURES:

High Voltage

Ratings

up

Popular

DO-4 Outline

to 200 C

Junction Temperature

Uses Hard Solders for Thermal Fatigue Protection

Transient Voltage Ratings 200 Volts

Above

PRV

Ratings

MAXIMUM ALLOWABLE RATINGS

Repetitive

Types

Full-Load Reverse

Peak

Reverse Voltage,

RMS

Vjti>(rap)tl>

Voltage

Veto*

Volts*

50

35

100

70

150

105

200
300

1N1204A,RA

400

RA
RA

DC

Blocking

Voltage

Vc**

-'

Non-Repetitive Peak
Reverse Voltage,

Vxu(non-rep)

Current

(full-

cycle avg.,
Tc,

150C

0), Ir(AV>

Volt*'

MiNiamperes*

50

100

3.0

100

200

2.5

150

300

2.25

140

200

350

2.0

210

300

450

1.75

280

400

600

1.5

500

350

500

700

1.25

600

420

600

800

1.0

1N3670A,RA

700

490

700

900

RA
RA
RA

0.9

800

560

800

1000

0.8

900

650

900

1100

0.7

1000

700

1000

1200

0.6

1200

840

1200

1400

0.5

1N1199A, RA
1N1200A, RA
1N1201A, RA
1N1202A, RA
1N1203A, RA
1N1205A,
1N1206A,

1N3671A,
1N3672A,
1N3673A,
1N5331,

Average Forward Current (Tc = 150C, single-phase)

Peak One-Cycle Surge Current (non-repetitive) Ifm (surge)
Minimum IH Rating (for times > .0008 sec. and

12

< .0083 sec, non-recurrent)

60

150 C, single-phase, full-cycle avg.)

(3)

0.55 Volts*

5C/Watt
-65C to +200C*
12 LWn (Min)> 15 Lb _ in (Max) ,
14 Kg-cm (Min), 17.5 Kg-cm (Max)*

NOTES:
(1)

Amperes seconds
2

Storage and Operating Junction Temperature, Tj

Stud Torque

(2)

Amperes*

240 Amperes*

Maximum Full-Load Voltage Drop (Tc =

Maximum Thermal Resistance, j.c

Maximum
Maximum

voltages apply with a heatsink thermal resistance of 22C/watt, or less, at maximum rated junction
temperature.
voltages apply with a heatsink thermal resistance 7C/watt, or less, at maximum rated junction
temperature.
Case temperature, Tc, is measured at the center of any one of the hex flats.

Indicates values included in

JEDEC Type Number

Registration.

213

1N1199A-1N1206A
1N1199RA-1N1206RA

38

DC

36

1N3670A-1N3673A

34

1N5331

32

300
200

30
^"

'

10

'

28

30

26

24

100

60

22
SO

20
18
16

/
14
a.

10

12

10

DC

4
\o

Ij

20 22 24 26 28 30 32 34
16
18
10
12
14
AVERAGE FORWARD CURRENT- AMPERES

"OO^C
2.

FORWARD POWER AS A FUNCTION OF AVERAGE FORWARD

CURRENT

_Tj25-C
0.1

L5

1.0

+200C)

2.0

3.0

2.5

3.5

4.0

FORWARD VOLTAGE - VOLTS

INSTANTANEOUS

1.

(Tj

MAXIMUM FORWARD

CHARACTERISTICS

160

o 100
3'

6a\

\V

DC
n<o60

S*40

K 20
TOR SUB -CYCLE SUR
( LESS THAN
CYCLE) USE CURVE 9

DURATIOI4
1

10

12

14

16

18

20 22 24 26 28

30 32 34 36

3.

MAXIMUM CASE TEMPERATURE

VS.

AVERAGE FORWARD CURRENT

10

30

40 BO (O

CYCLES AT CO Hi

AVERAGE FORWARD CURRENT -AMPERES

4.

214

MAXIMUM SURGE CURRENT FOLLOWING RATED LOAD CONDITIONS

300

1N1199A-1N1206A

250
,

.^L_

200

1N1199RA-1N1206RA
1IM3670A-1N3673A

nM a
CL

1N5331

ioo

Z
3
PULSE TIME

5.

43678910
( in

SEC.)

SUBCYCLE SURGE FORWARD CURRENT AND

2t

RATING FOLLOWING

RATED LOAD CONDITIONS

NOTE:
0.043" THICK COPPER FIN EMISSIVITY.

STUD MOUNTED DIRECTLY TO

MOUNTED VERTICALLY.

0%

NOTE:

FIN.

FIN

STUD MOUNTE D DIRECTLY TO

MINIMUM FIN

FIN

>^3

SIZE

FIN.

I^ERTICALLY.
PACING
0.S INCH.

FIN SIZE

1/2X31/2
3 1/2X31/2

2 1/2X2

1/2

2 1/2X2 1/2
1

1/2X1

1/2

II/2XI

SO

40

20

SO

100

120

AMBIENT TEMPERATURE

REQUIRED FIN SIZE

140

ISO

ISO

200

1/2

80

220

- *C

100

120

140

AMBIENT TEMPERATURE -

FREE CONVECTION, SINGLE

UNIMPEDED

FIN,

7.

REQUIRED FIN SIZE

FREE

CONVECTION, IMPEDED RADIATION

RADIATION

30
v>

28
1*6

< 24
22
SIZE

FIN

20

.,,3

1/2X3

18

<
*
5

16

i^

1/2

MINIMUM

FIN

SPACING

TO USE GRAPHS
1.

AIR VELOCITY OF 500 FT/MIN

USEO, MULTIPLY CURRENT
FACTORS BY 0.87.
IF

IS

2 1/2X2 1/?*

20

SO

REQUIRED FIN SIZE

80
IOO
120
140
AMBIENT TEMPERATURE *C

FORCED CONVECTION,

AND

Enter graph at vertical axis with desired

current multiplied by proper current
factor:

DC-0.80
10-1.00

1/2X1 l/2~*

40

6,

0.5 INCH.

14

8.

NOTE:
0.043" THICK COPPER FIN. EMISSIVITY-90H.
STUD MOUNTED DIRECTLY TO FIN.
FINS MOUNTED WRALLELTO AIR FLOW.
AIR VELOCITY
1000 FT/MIN.

160

ISO

200

220

IMPEDED RADIATION

215

30-1.15
60-1.40

2.

Intercept desired fin curve

3.

Read on horizontal axis the maximum

allowable ambient temperature

1N1199A-1N1206A
1N1199RA-1N1206RA
1N3670A-1N3673A
1N5331

9.

MAXIMUM

THERMAL

TRANSIENT

IMPEDANCE

JUNCTION

TO

HEATSINK

OUTLINE DRAWING

INSULATING HARDWARE
KIT*

10-32

UNF-2A

.078^

10-32 STEEL NUT

CADMIUM PLATED
LOCKWASHER,

^-DSO R

CADMIUM PLATED

DIA.

STEEL

COPPER TERMINAL, .016

THICK, TIN PLATED

BRASS

WASHER..035 THICK
NICKEL PLATED
MICA WASHERS. TWO, .625
O.D., .204
D...005 THICK

COMPLIES WITH
EIA REGISTERED OUTLINE DO-

I.

TEFLON WASHER..270

O.D.

SYMBOL

.204I.D...050 THICK

AVAILABLE UPON REQUEST

MILLIMETERS
NOTES
MAX.
MIN.

INCHES
MAX.
MIN.

.405

10.29

.424

10.77
11.10

.424

.437

10.77

.075

.175

1.91

.800

m
N
<f>t

.422

.250
.453

10.72
1.52

.060

4.45
20.32
6.35
11.51

NOTES:
1.

2.

Angular orientation of

this terminal is undefined.

10-32 UNF-2A. Maximum pitch diameter of plated threads shall be basic
pitch diameter (.1697", 4.29 MM) Ref (Screw thread standards for Federal
Services 1957) Handbook H28, PI.
.

216

Silicon

IN1341A-48A

Rectifiers

IN1341RA-48RA

MEDIUM CURRENT 6A TYPE

These stud mounted diffused junction

recommended

silicon rectifiers, (designed to meet

for all rectifier applications in the 2 to 8 ampere range.

MIL-E-1/1108) are

high junction temperature rating and an extremely low forward voltage drop and thermal impedance permit
high current operation with minimum space requirements. These rectifiers may be mounted
directly to a chassis or a fin or may be electrically insulated from the heat sink by using the
mica washer insulating kit
Versatility is further increased
by the availability of a negative polarity unit (stud is anode), described by the suffix "R"
appearing after the type number. The use of positive and negative polarity units facilitates
the construction of bridge circuits and permits the use of either a positive or negative heat
sink in half-wave and center-tap applications.
General Electric research, advanced development and product design have resulted in a
highly efficient rectifying junction. This feature, plus a mechanical design employing high
temperature hard solders and welds for all internal and external joints and seals, which
eliminates common sources of thermal fatigue failure, have produced a silicon rectifier with
outstanding reliability under all operating conditions.

electrical ratings

and specifications

Max. Allow. Transient Peak Reverse

Voltage (Non-recurrent, 5 millisec.
= to 200C)

max. duration, Tj

<6<> c PS ,

Revive

or

induce

u>ad)

1N1341A 1N1342A 1N1343A 1N1344A 1N1345A 1N1346A 1N1347A 1N1348A

1N1341RA1N1342RA1N1343RA1N1344RA1N1345RA 1N1346RA 1N1347RA 1N1348RA
100

200

300

350

450

600

700

800 Volts

50

100

150

200

300

400

500

600 Volts

35

70

105

140

210

280

350

420 Volts

50

100

150

200

300

400

500

600 Volts

Max. Allow. Peak Reverse Voltage

(Repetitive)*

Max. Allow.

RMS

Max. Allow.

DC

Voltage

Blocking Voltage**

Max. Allow. Forward Current (Single

Phase 150C stud temp.)

-6 amperes-

Max. Allow. Peak One Cycle Surge

Current (non-recurrent)

150 amperes

Rating (for t greater than .0008 sec.

and less than .0083 sec. (non-recurrent)

I 2t

-25 ampere 2 sec.

min. rating

(T,

^65Cto +200C)

Max. Full Load Voltage Drop (Single

Phase, Full Cycle Average 150C
stud temp.)

-.64 Volts-

Max. Leakage Current at Full Load

(Single Phase, Full Cycle Average
150C stud temp.)
Max. Thermal Resistance (junction

3.0

2.5

2.25

to stud)

2.0

1.75

1.5

1.25

-4.25C/Watt-

Junction Operating and Storage

Temp. Range
Stud Torque

Maximum
Maximum

-65C

Minimum 12

in.-lbs.;

to

Maximum

+200C

15

in.-lbs.

voltages apply with a heat sink thermal resistance of 22C/ Watt or less at maximum rated junction temperature.
voltages apply with a heat sink thermal resistance of 7 /Watt or less at maximum rated junction temperature.

217

1.0

ma

DRAWING

OUTLINE

1N1341A-48A
1IM1341RA-48RA

DIRECTION OF EASY CONVENTIONAL

CURRENT FL0W-INII99A-INI206A

__

__^

INSULATING

DIRECTION OF EASY CONVENTIONAL

HARDWARE

CURRENT FL0W-INII99RA-INI206RA

KIT*

OUTLINE DRAWING
DIRECTION OF FOWARD CURRENT FLOW:

*4

MILLIMETERS

INCHES

NOTES

SYMBOL
MAX.

MIN.

.405
.424
.437
.175
.800
.250
.453

<pD

E
F

.424
.075

m
N

.422
.060

*t

MIN.

10.77
1.91

10.72
1.52

INSULATING HARDWARE
KIT*

REVERSE POLARITY
FOWARD POLARITY
10-32

MAX.

<B

-UNF-2A

10.29
10.77
11.10
4.45
20.32
6.35
11.51

-I
nut
10-32 steel
plated

cadmium
(Dlockwasher,
cadmium plated
STEEL

.078

COPPER TERMINAL, 016

'

~W^

THICK, TIN PLATED

COMPLIES WITH
EIA REGISTERED OUTLINE DO-4

BRASS

WASHER..035 THICK
NICKEL PLATED
MICA WASHERS, TWO, -625
O.D., .204 10., .005 THICK

NOTES:
1.

2.

Angular orientation of this terminal is undefined.

10-32 UNF-2A. Maximum pitch diameter of plated threads
shall be basic pitch diameter (.1697", 4.29 MM). Ref: (Screw
thread standards for Federal Services 1957) Handbook H28, PI

NOTES!

(I)

(2)

W.

TEFLON

WASHER..270

O.D.

.204 ID...050 THICK

AVAILABLE UPON REQUEST

UNIT WEIGHT -.25 OZ

MICA WASHER IN MOUNTING KIT MAY ADD APPROX
6.5*C/WATT THERMAL RESISTANCE STUD TO
HEAT SINK

200
INI34IA

/r
100

INI34IRA

TY PICAL-^
>

INI34 3A
INI34 3RA

-MA>(IMUM

20

INI3<
INI34

10

INI3' I4A
INI34 4RA

f,
iu
a.

5RA
INI 346

MA XIMUM AND TYPICAL

1'

INSTANTAN EOUS
FOR WARD CHARACTERISTICS

5.0

ZjO

5A _
INI 346A

It/I

CO
3
o

MAXIMUM REVERSE CHARACTERISTICS

JUNCTION TEMPERATURE 25*C TO 200C

INI3< 2A
INI3' )2RA

/
V/y

50

RA

INI34 7A
INI34 7RA

INI34SA
INI348RA

800

100

INSTANTANEOUS REVERSE VOLTAGE- VOLTS

1.0

2.

REVERSE CHARACTERISTICS

TJ '20 O'C
0.5

i'Il
J

=25 c

02
I

0.1

1.

.5

1.0

1.5

2.0

2.5

30

3.5

4.0

45

MAXIMUM AND

5.0

INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS

218

TYPICAL

FORWARD CHARACTERISTICS

V
dc

1N1341A-48A

1
1

JUNCTION TEMPERATURE

31

y ee

200 C

1N1341RA-48RA

/j,

AVERAGE FORWARD CURRENT-AMPERES

3.

FORWARD POWER DISSIPATION

l40
EC

<

z
o

60

se

ie

,0

g 90

MAXIMUM ALLOWABLE SURGE CURRENT

AT RATED LOAO CONDITIONS

* 80

(NON-RECURRENT)

DC

>

z 50
CO
_l

<
1

30

<

FOR SUB-C
DURATION (LESS THAN

4.0

4.

6.0

CYCLES AT SO

AVERAGE FORWARD CURRENT -AMPERES

MAXIMUM ALLOWABLE STUD TEMPERATURE

5.

10
C.P.S.

SURGE RATING

(1-60 cycles)

i
MAXIMUM ALLOWABLE FORWARD
SURGE CURRENT FOR SUB CYCLE
"(LESS THAN CYCLE) PULSEWIDTHS FOR CALCULATING I 2 t
1

T,

-65"C TO 200C

PULSE TIME -MILLISECONDS

6.

SUB-CYCLE SURGE RATING

219

1
1

DIRECTLY TO
VtKIILALLY

1N1341RA-48RA

1.

7, S,

l/Z"X

Enter graph at vertical axis with desired

current multiplied by proper current factor:

30-1.15
60-1 .40

DC-0.80
1

0-1 .00

2.

Intercept desired fin curve

3.

Read

on horizontal axis the

allowable ambient temperature.

maximum
120
80
oo
AMBIENT TEMPERATURE-

FIN SIZE
\z

10

Till

NOTE' 0.043" THICK COPPER FIN.

FIN SIZE

uJ
rr

ISSIVITY-90% STUD MOUNTED

9
Dl

Id

tECTLY TO FIN, FIN MOUNTED

1
1

FIN,

^S^3"X3"

MOUNTED PARALLEL TO

^^^2'X2^*N

MINIMUM FIN SPACING

EMISSIVITY-

AIR

90%

FLOW. AIR

1/2".

1/2 XI 1/2"

AN AIR VELOCITY OF

IF

MULTIPLY CURRENT

or

"XI"

id

(t

NOTE: 0.043" THICK COPPER

/2"

<t

FIN. FIN

MOUNTED

|\,
1

TO USE GRAPHS

NOTE' 0.043 THICK COPPER FIN,

FIN SIZE

1N1341A-48A

2"X2"
b

3
"X

*
O

1/2"

U-

<
K

UJ

!
<

*2

at

'

60

SO

100

120

ISO

140

120
80
100
AMBIENT TEMPERATURE C

200

AMBIENT TEMPERATURE-*C

8.

REQUIRED FIN SIZEFORCED CONVECTION,

IMPEDED RADIATION

REQUIRED FIN SIZE FREE CONVECTION,

IMPEDED RADIATION

MA XIMUM 1 rRANSENT
TH ERMAL *ESISTANC E

CIJRVE >EFINES T EMP RISE OF JUNCTION ABOV : HEAT

SI NK FC)R SINGLE LOA D PULSE OF DURATION t. PEAK
ALLOWABLE DISSIPATION IN RECTIFIER FOR TIME t, IF

/**DTE

STARTING FROM HEAT SINK TEMR.EQUALS 200C (MAX

Tj ) MINUS MAXIMUM HEAT SINK TEMP DIVIDED BY THE
TRANSIENT THERMAL RESISTANCE

200C- T HEAT SINK

p_
PEAK

r
T
FOR OPTIMUM RATINGS AND FURTHER INFORMATION^EE
PUBLICATION ECG-469 ENTITLED "POWER SEMICONDUCTORRATINGS UNDER TRANSIENT AND INTERMITTENT LOADS"
lllll
lllll
lllltl
!0
100
50
K
10
i
50
5
2
i

.c

01

.002

.006

10.

.01

<

\z

.OS

MAXIMUM TRANSIENT THERMAL

220

RESISTANCE

Silicon

IN1612-16.R

Rectifier
MEDIUM CURRENT 5A

These popular stud mounted 5 ampere rectifiers are the commercial version of the
MIL-19500/162 rectifiers. They were designed specifically to meet this military specification. Hermetic seals, one piece terminals, and all-hard-solder construction are
the major
features of this design. The all-hard-solder or welded construction is an important feature for the designer to consider. Temperature excursions caused by heating and cooling
when the rectifier is used intermittently at maximum rating will cause thermal fatigue
in a soft-solder construction. The hard-solder and welded construction
provides freedom

from thermal fatigue

failures.

The major features of

this

design are:

Hard-Solder, Thermal Fatigue Free

Solid One-Piece Terminal
Low Thermal Impedance
Transient PRV Ratings

electrical ratings

and specifications

Max. Allow. Transient Peak Reverse

Voltage

Non-recurrent, 5 millisec.
= to 190 C)

max. duration, Tj

<6<> c PS ,

Reside

or inductive Load)

IN1612
1N1612R

1N1613
1N1613R

1N16141
1N1614R

1N1615*
1N1615R

1N1616*
1N1616R

100

200

350

600

800

Volts

50

100

200

400

600

Volts

35

70

140

280

420

Volts

50

100

200

400

600

Volts

Max. Allow. Peak Reverse Voltage

(Repetitive)*

Max. Allow.

RMS

Max. Allow.

DC

Voltage

Blocking Voltage**

Max. Allow. Forward Current (Single

Phase -f-150C stud temp.)

amperes

Max. Allow. Peak One Cycle Surge

Current (non-recurrent)

150 amperes

I2t

Rating [for t greater than .0008 sec.

and less than .0083 sec. (non-recurrent)]

sec. min. rating

= -65Cto+190C)

25 ampere 2
"

(T,

Max. Full Load Voltage Drop (Single

Phase, Full Cycle Average +150 C
stud temp.)

.64 Volts

Max. Leakage Current at Full Load

(Single Phase, Full Cycle Average
150C stud temp.)
Max. Thermal Resistance (junction

1.0

1.0

1.0

to stud)

1.0

7.0C/Watt.

Junction Operating and Storage

Temp. Range
Stud Torque

-65Cto+190C
Minimum

Maximum
Maximum

12

in.-lbs.

Maximum

15

in.-lbs.

voltages apply with a heat sink thermal resistance of 22C/Watt or less at maximum rated junction temperature.
voltages apply with a heat sink thermal resistance of 7 /Watt or less at maximum rated junction temperature.
(Available as MIL-S-19600/162 devices.

221

1.0

ma

1N1612-16, R
I

200

I00(-

I.O

.5

2.0

I.5

2.5

3.0

3.5

4.0

4.5

1.

MAXIMUM AND

TYPICAL

200

100

5.0

INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS

300

FORWARD CHARACTERISTICS

2.

500

00

INSTANTANOUS REVERSE VOLTAGE

VOLTS

REVERSE CHARACTERISTICS

24
!

22

*fl

IB

DL

DC "

20
18
i

16

'

14

38V,

12

60*~"
10

*
\

*~JU NCI ON

>f"
Z

TEMPER 4TUBE

90'

r
4

"1

10

12

14

16

18

20

22

24

20

3.

FORWARD POWER

DISSIPATION

40

60

80

100

120

140

160

IE

STUD TEMPERATURE -DEGREES CENTIGRADE

AVERAGE FORWARD CURRENT- AMPERES

4.

222

MAXIMUM ALLOWABLE STUD TEMPERATURE

1N1612-16, R

MAXIMUM ALLOWABLE FORWARO

SURGE CURRENT FOR SUB CYCLE
CYCLE) PULSE-,
WIDTHS FOR CALCULATING I * 1

(LESS THAN

Tj =

-6S-C TO

90"C

PULSE TIME -MILLISECONDS

6.

SUB-CYCLE SURGE RATING

TO USE GRAPHS
4.0

&0

CYCLES AT 60

current multiplied

C.P.S.

SURGE RATING

8,

7,

Enter graph at vertical axis with desired

1.

I0

(1-60 cycles)

by proper current

DC-0.80
1^-1.00
2. Intercept

REQUIRED FIN SIZE FREE

CONVECTION, SINGLE FIN,

UNIMPEDED RADIATION

60-1.40

desired

curve

fin

Read on horizontal axis the maximum

allowable ambient temperature.

3.

"7.

factor:

30-1.15

14

<
z
hi

NOTE

0.043 THICK COPPER FIN.

SIVITY = 90% STUD MOU NTED
DIRE CTLY TO FIN.

SIZE

FIN

/n

12
10

MOUNTED VERTICALLY.

,^"X2"

a
6

%
a
o

1/2" XI 1/2"

Li.

UJ

<
80

100

AMBIENT

*8.

REQUIRED FIN SIZEFREE

CONVECTION, IMPEDED
RADIATION

Q.

2
<

NOTE 0.043" THICK COPPER FIN EMISSIVITY

FIN

^3"X

|0

QZ

i"

SPACING

2"X2"

30%, PAINTED OR ANODIZED FIN. STUD

MOUNTED DIRECTLY TO FIN. FIN
MOUNILD VERTICALLY. MINIMUM FIN

SI2 E

a:

140
C

14

Ld

120

TEMPERATURE

1/2"

-">

<

1
o

1/2

"

1/2

u.

2
LJ

O
<

80

100

120

140

AMBIENT TEMPERATURE 'C

"9.

REQUIRED FIN SIZE FORCED

CONVECTION, IMPEDED
RADIATION

NOTE: 0.043" THICK COPPER FIN. EMISSIVITY

STUD MOUNTED DIRECTLY TO FIN.
FINS MOUNTED PARALLEL TO AIR FLOW.
AIR VELOCITY - 1000 FT/MIN.
MINIMUM FIN SPACING -1/2"

90%

'

AN AIR VELOCITY OF 500 FT/MIN IS

USED, MULTIPLY CURRENT FACTORS BY 0.88
IF

80
100
120
AMBIENT TEMPERATURE

223

140
C

1N1612-16, R

MAXIMUM TRANSENT
THERMAL RESISTANCE

defines temp rise of junction above heat

SINK FOR SINGLE LOAD PULSE OF DURATION 1 PEAK
allowable dissipation in rectifier for time t, if
starting from heat sink temr.eouals 200c (ma X
tj ) minus maximum heat sink temp divided by th

/MOTE: curve
f

transient thermal resistance

200 ' c - The t

Vcaic

sini<

FO R OPTIMUM RATINGS AND FURTHER INFORMATION,SEE

PI BLICATION ECG-469ENTITLED "POWER SEMICONDUCTC .
R TINGS UNDER TRANSIENT AND INTERMITTENT LOADS"
1

001

02

32

.05

nun

10

mm

>0

so

MAXIMUM TRANSIENT THERMAL

10.

100

90

20

11

oo

RESISTANCE

OUTLINE DRAWING
DIRECTION OF FOWARD CURRENT FLOW:

REVERSE POLARITY
FOWARD POLARITY

INSULATING HARDWARE
KIT*

o@

10-32
-UNF-2A

ft
NUT
10-32 STEEL
CADMIUM PLATED
LOCKWASHER,
CADMIUM PLATED

STEEL

.078
DIA.

080 R

COPPER TERMINAL, 016

THICK, TIN PLATED

COMPLIES WITH
EIA REGISTERED OUTLINE DO-4

BRASS WASHER.035

THICK
NICKEL PLATED
MICA WASHERS, TWO, .625
O.D., .204 ID.,.005 THICK
TEFLON WASHER..270 OD.
.204 1.0, .050 THICK

AVAILABLE UPON REQUEST

INCHES

MILLIMETERS

NOTES

SYMBOL
MIN.

MAX.

.424
.075

.405
.424
.437
.175
.800
.250

A
<j)D

E
F
J

m
N
0t

.422
.060

.45 3

MIN.

10.77
1.91

10.72

MAX.
10.29
10.77
11.10
4.45
20.32
6.35
11.51

1.52

NOTES:
1.

2.

Angular orientation of this terminal is undefined.

10-32 UNF-2A. Maximum pitch diameter of plated threads
shall be basic pitch diameter (.1697", 4.29 MM). Ref: (Screw
thread standards for Federal Services 1957) Handbook H28, PI

224

Silicon
I

1N2154-60.R

Rectifiers
Medium Current

These stud mounted diffused junction silicon rectifiers are designed for all rectifier applications in the 2 to 30 ampere range.
A high junction temperature rating and an extremely low forward voltage drop and thermal impedance permit high current
operation with minimum space requirements. These rectifiers
may be mounted directly to a chassis or a fin or may be electrically insulated from the heat sink by using the mica washer
insulating kit
Versatility is
further increased by the availability of a negative polarity unit
(stud is anode), described by the suffix "R" appearing after the
type number. The use of positive and negative polarity units
facilitates the construction of bridge circuits and permits the
use of either a positive or negative heat sink in half-wave and
center-tap applications. Stacked fin assemblies (4JA3511 series)
are also available.
General Electric research, advance development and product

design have resulted in a highly efficient rectifying junction.

This feature, plus a mechanical design employing high temperature hard solders and welds for all internal and external joints
and seals, which eliminates common sources of thermal fatigue
failure, has produced a silicon rectifier with outstanding reliability under all operating conditions.

electrical ratings

and specifications

Max. Allow TransientiTPeak

Reverse
Voltage (Non-Recurrent 5 millisec.
max. duration)
.

<6<>

cp s. Resistive r inductive Load)

1N2154 1N2155 1N2156 1N2157 1N2158

1N2159
1N2154R 1N2155R 1N2156R 1N2157R 1N2158R 1N2159R

1N2160
1N2160R

100

200

350

450

600

700

800 volts

500

600 volts

Max. Allow. Peak Reverse Voltage*

(Repetitive)

Max. Allow.

RMS

Max. Allow.

DC

Voltage

Blocking Voltage**

50

100

200

300

400

35

70

140

210

280

350

420 volts

50

100

200

300

400

500

600 volts

Max. Allow. Forward Current (Single

145 C stud temp.)
Phase

<

25 amperes

>.

Max. Allow. Peak One-Cycle Surge Current

-<-

400 amperes

->

I2t

Ratings (for fusing)

(fort = .0008 < t < .0083 seconds)

250 ampere2 sec

Max. Full Load Voltage Drop (Full Cycle

Average 145C

stud temp.)

.<

>

0.60 volts

Max. Leakage Current

at Full Load (Full

Cycle Average, Single Phase
145 C stud temp.)

Max. Thermal Resistance (junction

Junction Operating and Storage
Temperature Range

to stud)

4.5

3.5

2 .5

1.5C/watt

<

65C to +200C

>
>-

Maximum

voltages apply with a heat sink thermal resistance of 12C/watt or less at maximum rated junction temperature.
"Maximum voltages apply with a heat sink thermal resistance of 5C/watt or less at maximum rated junction temperature.
**For RMS surge current ratings in sub-cycle region (less than one cycle) as a function of t, see Curve IX.

mechanical specifications
Maximum Stud Torque
30 inch-pounds
Mechanical Shock
M1L-STD-202, Method 202 500G for 1 millisec. 5 times in each of 3 directions
Vibration (Fatigue)
Any frequency between 45-100 cps with constant peak acceleration of 10G
Vibration (High Acceleration)
100 to 1000 cps with constant peak of 10G
Centrifuge
5000 G
Moisture Resistance
MIL-STD-202, Method 106
Temperature Cycling
5 cycles, -65C to +175C
225

ma

N 21 54-60, R

IO

.5

15

2.0

10

2.5

1.

MAXIMUM AND

TYPICAL

20

15

AVERAGE FORWARD CURRENT -AMPERES

INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS

FORWARD CHARACTERISTICS

3.

FORWARD POWER

DISSIPATION

MAX IMUM LEAK AGE CURRE:nt

JUNCTION TEMPERA rURE 25C TO 200'C
20

IN2I54

IN2I54R

ol5
ui

IN2IS5

IN2ISSR

UJ

>

IN2I56

IN2I56R

OUTLINE DRAWING
IN2I57
IN2I57R

IN2I58
IN2I58F.

l^-^

k^.

IN2I60

^*S=
100

INZIS 9
iN2i:)9R

IN2I60R

200

DIRECTION OF EASY CONVENTIONAL

CURRENT FL0W-IN2I54-IN2I60

DIRECTION OF EASY CONVENTIONAL

CURRENT FL0W-IN2I54R-IN2I60R

500
600
300
400
INSTANTANEOUS INVERSE VOLTAGE- VOLTS

2.

REVERSE CHARACTERISTICS

COMPLIES WITH
EIA REGISTERED OUTLINE DO-5

226

1N21 54-60, R

AVERAGE FORWARD CURRENT -AMPERES

4.

MAXIMUM ALLOWABLE STUD TEMPERATURE

to

2
v>

ii.

i-x

MAXIMUM ALLOWABLE NON-RECURRENT

5.
SURGE CURRENT AT RATED LOAD CONDITIONS

rjMi

llNlj

250 AMP2 SEC.

400

cr

a.

<
*-

\
A

300

ID
ft:

a:

UJ
(s>

200

a:

to

Q
or
<

or

100

MAXI MUM /U.L0 WA BL E SUFK3E

CUIRRENT IN RM S AMPER ES

*^^___^

ti.

10

20

30 40 60 80

100

PULSE TIME- MILLISECONDS

6.

SUB-CYCLE SURGE RATING

227

200

400 600 800 1000

1N21 54-60, R

80

I20
80
AMBIENT TEMPERATURE-'C

7.

I60

I20

AMBIENT TEMPERATURE -C
8. 'REQUIRED FIN SIZEFREE CONVECTION, IMPEDED RADIATION

'REQUIRED FIN SIZE FREE CONVECTION

SINGLE FIN, UNIMPOSED RADIATION

TO USE GRAPHS

7,

AND

Enter graph at vertical axis with desired

current multiplied by proper current factor:

1.

DC-0.80

3<H.15

6^.-1.40
I4.-I.OO
fin
curve
desired
2. Intercept
3. Read on horizontal axis the maximum
allowable ambient temperature

ill

Mini

mi

lllll

FOR SINGLE LOAD PULSE OF DURATION

T.

Mill

inn

PEAK ALLOWABLE

DISSIPATION IN RECTIFIER FOR TIME T. IF STARTING FROM HEAT

SINK TEMPERATURE, EQUALS 200' C (MAXIMUM Tj] MINUS
MAXIMUM HEAT SINK TEMPERATURE DIVIDED BY THE TRANSIENT

ZOO*
P PEAK

C - T rteAT SIHK

'
r-t
i

"1
.ijH''

.1

A
1

'

'

i>

'
<'

120
80
AMBIENT TEMPERATURE-'C

APPUCKtioH HOTC 2O0.5 ^OR^ERLY CG 469) ENTITLED

"POWER SEKHCONOUCTpR RATINGS UNDER TRANSIENT AND

160

,,

in

PEAK SQUARE WAVE FORWARD POWER "ON" TIME-SECONO

9. 'REQUIRED FIN SIZEFORCED CONVECTION, IMPEDED RADIATION

10.

228

TRANSIENT THERMAL RESISTANCE

Silicon

IN4305

"I

Diode

The IN4305
puter circuits and

diode

features

a very high speed silicon switching diode for compurpose applications. This oxide passivated planar
recovery time, low leakage and low capacitance. The maxiforward voltages are specified at four forward currents from
is

general

fast

mum

and minimum
250 uamps to 10 ma. This guaranteed, closely controlled conductance is necessary
for the design of clamping circuits, logic circuits and other types of circuits that
require tolerances on voltage levels. The double heatsink 1N4305 offers springless
construction, 500 mw dissipation, reduced package size, and is recommended for

new

Double Heatsink Diode (DHD) 1N4305

design.

1N4305
Reverse Voltage

50

Average Rectified Current

Forward Steady-State DC Current
Recurrent Peak Forward Current
Peak Forward Surge Current (1 usee, pulse)
Power Dissipation (25C free air)
Operating Temperature
Storage Temperature

electrical characteristics:

volts

200
225
2000

ma
ma
ma
ma

500

mw

150

+200
+200

-65 to
-65 to

.032

CATHODE

N4305
Max.

Min.

=2 ma)
= 10ma)

Reverse Current (V R

-50 v)

Reverse Current (150C) (V R

Reverse Recovery Time

(I

-50v)

= 10 ma,

10 ma) (Note

EW

(25C) (unless otherwise specified)

Breakdown Voltage (I R =5 ua)

Forward Voltage (I F =250 uamps)
(I F =1 ma)
(I F

.075
.060

OIA.

C
C

(I F

002

"T

1)

75

volts

v FI
V F2

.505

.575

volts

.550

.650

volts

.610

.710

volts

v F4

.700

.850

volts

uamps
uamps

Ir

.1

Ir

100

trr

nsec.

trr

nsec.

Co
Re

Pf

Reverse Recovery Time

(I

=10 ma, V =
r

-6V,

=0

R L =100

(Note
te

(Note 2)
Rectification Efficiency (100 mc) (Note

Capacitance (V R

Note

1:

2:

3:

1)

v)

3)

Recovery time to 1 ma.

Capacitance as measured on Boonton Model 75A Capacitance Bridge
a frequency of 1 mc.
Rectification

Efficiency

is

defined

detector circuit, measured with 2.0

as

the

vrms input

ratio

of

DC

to the circuit.

229

45

at

a signal level of 50

load voltage to peak

rf

mv and

input voltage to the

Load resistance 5K.Q, load capacitance 20

uuf.

Silicon

Rectifiers
A40F-M
A41F-M

specifically tor the normal industrial and

General Electric has designed this 20 Ampere rectifier
ting^, h
utilizers the smallest practical size for he a
design
The
applications.
temperature
lev. ambient
solid one-piece terminal and he -to-hex
The
construction.
rugged
and
rigidity
attention
to
particular
strength, minimizes breakage problems, and prosolder mounting technique provides good mechanical
junction to the stud.
diffused
the
from
characteristics
transfer
motes stability of heat

OUTLINE DRAWING

STRAIGHT KNURL 50TPI

High Surge Current Capabilities Up

(

to

300 Amperes)

One-piece Terminal
Positive Solder Case-to-hex Mounting
Small Size 9/16" Hex, 1/2" Diameter Barrel

73

12.83

11.86

1207

.501

.467

505
465

.177

REF.

4.50

REF

.109

REF

2.77

REF.

12

65

104

.115

.285
.330

.350

7.24
8.39

.810

.083

.097

2.11

,034

REF.

T
U

CHARACTERISTICS

MAX.

AND

MIN

RATINGS

MM

MAX

MIN.

Reverse Polarity Devices Available

METRIC

DECIMAL
INCHES

375

SIZE-l/4"-

.086

.096
.920
.485

552
432

562
.442

2.46
REF.

.86

.250

THREAD

2 .91
8.88

9.52
20.56

6.34

280UNF- 2A
2.49

2.18

14

23.36
12.31

14.27

02

10.97

1.23

(Single Phase Resistive Load)

A40A

A40B

A40C

A40D

A40E

A40M

A41F

A41A

A41B

A41C

A41D

A41E

A41M

Max. Peak Reverse Voltage

50

100

200

300

400

500

600

volts

Max. Continuous D-C Reverse Voltage

50

100

200

300

400

500

600

volts

35

70

140

210

280

350

420

volts

Forward Polarity
Reverse Polarity

Max. Sine Wave

RMS Voltage

Max. Avg. D-C Forward Current

At 110 C Stud
At 150 C Stud

A40F

- 20 amps
- 15 amps

Peak One-Cycle Forward Surge Current (60

300 amps
100

Ft Rating for Fusing or Capacitor Inrush

at 20

sec

1.2 volts

at

0.75 volts

Rated D-C Reverse

Max. Full Load Reverse Current

1.0

10

Typical Thermal Resistance (junction to stud)

+175C

-65Cto+175C

65C

Storage Temperature Range

~+

1N3208R-1N3214R are available when desired and are

NOTE: 1N3208-1N3214
hex size will be 11/16" across the flats on the 1N3208 series.
or

230

4.5

4.0

ma

1.5C/watt

-+-

Operating Junction Temperature Range

Stud Torque

ma

(full cycle avg.,

single phase)

Maximum

amp 2

Amps D-C Forward

Max. Avg. Forward Voltage Drop

(15 amps d-c single phase, T., = 150C)
Max. Reverse Current
Voltage (T., = 25C)

>-

cps,

T, = 25C)

Max. Forward Voltage

Current (T, = 25C)

identical to

to

25 in.-lbs
A40F-A40M or A41F-A41M

respectively, except that

1N3208, R
1N3214, R
1000

175

o
o

170
Tj25C

^Tj s l75C

111

=5
l-

160
a.
UJ

<

100

a.

a.
iLl

0.

ISO

r-

ui
IE

o
>-

o
140

o
4

UJ
_i

10

or

p
CO

ALLOW

<

o
1.0

CO

MAXIMUM

100
',

',

"-

'

-j

"

4
AVERAGE
1.

4.0

3.5

<=

20

24

0.1

12

16

O1234

INSTANTANEOUS FORWARD VOLTAGE - VOLTS

FORWARD CURRENT- AMPERES

AND THREE PHASE CURRENT RATING

AS A FUNCTION OF STUD TEMPERATURE

SINGLE PHASE

2.

TYPICAl

^
160

ISO

A40D, A4ID
400 P RV

3.0

500 P*RV

^
1
3

130

2.5
kj
CO

-*^*A40M,
IM600 PRV

jg!20

\\
\

UJ

-J

^100

CO

\\
\\

v v^

2.0

o
UJ
2

FORWARD CHARACTERISTICS

170

A40A.A4IA
100 PRV
A A40B.A4IB - A40C.A4IC
200 P *V>^ 300 F* RV

1-

UJ
ct

'

A40F 50 PRV

A4IF

<

*>

1.5

V\

90

in

_iPEAK
T^ ERAGE

25
18

12

10

70
.5

SO

NOTE: FOR SUR8E RESISTOR SELECTION PROCEDURE

SEE "RECTIFIER COMPONENTS GUIDE1
(PUBLICATION 640.4) SECTION 6
1

100

200
INSTANTANEOUS

300

400

500

600

TYPICAL REVERSE CHARACTERISTICS

(Tj

10

12

14

16

18

20

AVERAGE FORWARD CURRENT - AMPERES DC

REVERSE VOLTAGE - VOLTS

4.

3.

= 175C)

231

HALFWAVE CAPACITIVE LOAD RATING

1N3260-73.R

Silicon

Rectifiers

General Electric now offers 160 ampere

1N3260 through 1N3273.

EIA Types

silicon rectifier diodes of the

OUTLINE

DRAWING
!*# v

This product features:

Choice of stud anode or stud cathode types

Thermal

Low

Great uniformity of product

High surge current

fatigue resistant

reverse current

RATINGS

AND

capabilities

SPECIFICATIONS:

11

'

1N3271 1N3272 1N3273

1N3260 1N3261 1N3262 1N3263 1N3264 1N3265 1N3266 1N3267 1N3268 1N3269 1N3270
*

Maximum
tive

Allowable Repeti

Peak Reverse Voltage,

50

100

150

200

250

300

350

400

500

600

700

800

900

1000

3>
40
Blocking Voltage, V K
Average
Allowable
''Maximum
Forward Current, I F (AV) (single
phase, 125C case
temperature)
* Maximum Allowable Peak
One-Cycle Surge Current,

80

120

160

200

240

280

320

400

480

560

640

720

800

V RRM (rep)
Maximum Allowable DC
(2>

'

TSM (surge)

160 amperes

(60 cps single-

phase basis, non-repetitive)

Minimum Ft Rating

(non-repetitive)

2000 amperes

-*

8,250

amperes 2 seconds

'"Maximum Peak Forward

Voltage Drop, V M (I T = 160
amps DC, Tc=125C)
* Maximum Full Load Reverse
Current, Iu<av> (full-cycle
average, 125C case temperature, single phase)
*

Maximum Thermal

ance, Ron (junction to case)

Storage Temperature, T stB

* Operating Temperature, Tj
Maximum
Stud Torque
14 '

NOTES-

Minimum

Chart

7)

1.6 volts

12 milliamperes

Resist-

(see

*
*
*

0.3C/watt
65C to + 175C
55C to -fl90<>C
325 inch-pounds (375 kg-cm)
275 inch-pounds (320 kg-cm)
-

-*

stud anode (reverse polarity)

'"Models listed are stud cathode (forward polarity) types. Order 1N32 R for
except where noted
cycles/second,
to
400
from
up
50
frequencies
for
types. Ratings and specifications are
differently.
or less.
'"'Rating assumes a rectifier diode heat sink dissipation of 2.0 C/watt,
or less.
1.0C/watt,
of
dissipation
sink
heat
diode
rectifier
'"'Rating assumes a
is
'"Use of a silicone grease (G-E #G623) between the rectifier base and heat sink

Indicates JEDEC Registration Parameters.

232

recommended.

\
10,000

100

200

300

AVERAGE

400

FORWARD CURRENT

500
-

AMPERES

AVERAGE FORWARD POWER DISSIPATION VS.

AVERAGE FORWARD CURRENT (Tj = +190C)

2.

I2345

en
.40

INSTANTANEOUS FORWARD VOLTAGE - VOLTS

I.

MAXIMUM FORWARD

<0 a 30

DC

CHARACTERISTICS
<

4
i

20
'

/ /

z
<
or

05

10,000

- MILLISECONDS TIME (AFTER START OF CURRENT FLOW)

4.

40

60

80
AVERAGE

3.

100

120

140

160

(80

ZOO

220

TRANSIENT THERMAL RESISTANCE

JUNCTION TO CASE

240 2S0

FORWARD CURRENT - AMPERES

MAXIMUM CASE TEMPERATURE

FORWARD CURRENT

VS.

AVERAGE

111

o
QT
3
CO
O

CO
UJ
or
uj
Q-

S
<

1000

UJ
or or
or

4O0

n
"I

456789

10

PULSE TIME-MILLISECONDS

40
CYCLES AT 60 CPS
5.

MAXIMUM SURGE CURRENT FOLLOWING RATED

LOAD CONDITIONS

(Tj

= -55C TO

+190C)

233

6. SUBCYCLE SURGE FORWARD CURRENT FOLLOWING

RATED LOAD CONDITIONS (Tj = -55C TO + 190C)

Silicon

1N3289-96,R

Rectifiers

A70S,A70T
A71S,A71T

By taking full
Series is the ultimate in today's High Current Silicon Rectifier field.
General Electric
advantage of the most advanced semiconductor component manufacturing techniques.
now offers the industry's first double diffused, all hard solder 100-ampere readier in PRV ratings up to

The 1N3289-1N3296

1,200 volts.

As

a result, circuit designers

now

receive:

Features:
Freedom from Thermal Fatigue Failure
Higher Surge Current Capabilities

NEMA Overload Ratings

Forward and Reverse Polarities

CONFORMS TO JEDEC OUTLINE

RATINGS
Maximum Allowable Transient Peak Reverse
Voltage (nonrecurrent, 5 millisecond

AND

SPECIFICATIONS

1N32M 1N3290 1N3291 1N3292 1N3293

1N32MR 1N3290R 1N3291R 1N3292R 1N3293R

A70S
A71S

1N3294
1N3294R

A70T
A71T

maximum

1N3295
1N3295R

1N3296
1N3296R

duration)

300

400

525

650

800

925

1050

1175

1300

1500

volts

Maximum Allowable Repetitive Peak Reverse

Voltage, Vhm (rep)

200

300

400

500

600

700

800

900

1000

1200

volts

140

210

280

350

420

490

560

630

700

840

volts

700

800

900

1000

1200

volts

4.5

3.5

Maximum
Maximum
Maximum

Allowable
Allowable

RMS
DC

Reverse Voltage

Blocking Voltage**

200

400

300

600

500

Allowable Average Forward Current

100 amperes

(single phase, 130C stud temperature)

Maximum Allowable Peak One-Cycle Surge

Current (60 cps single-phase basis, non-recurrent)
Minimum

I t

1600 amperes

4000 amperes--seconds (See Curve 8)

Rating (non-recurrent)

Maximum Full Load Voltage Drop (full-cycle

average, 130C stud temperature, 100
amperes average single phase)
Maximum Full Load Reverse Current (full-cycle
average, 130 stud temperature, single phase)
Maximum Thermal

0.6 volts

9.5

9.0

9.0

Resistance (junction to stud)

DC =

6.5

8.0

0.4C/w; 10

6.0

&

30

-40C

Storage and Junction Operating Temperature

Max. Stud Torque***

=
to

5.5

5.5

.55C/w; 60

.72C/w

+200C

100 Lb-in (120 Kg-cm)

90 Lb-in (105 Kg-cm)

Min. Stud Torque

Approximately 23^ ounces

Weight

NOTES:
t

"R"

Rating assumes

rectifier cell

heat sink of less than 3C/watt.

**

Rating assumes

rectifier cell

heat sink of less than 1.5C/watt.

***

Use

indicates reverse polarity

of silicone grease between rectifier base and heat sink

is

recommended.

overloads. For
Non-recurrent voltage and current ratings, as contrasted to repetitive ratings, are ratings which apply for occasional or unpredicable
example, the forward surge current ratings are non-recurrent ratings that are used in fault coordination design work.

234

DIODE SPECIFICATIONS

1N3289-96, R

A70S, A70T
A71S, A71T

IN3289/

HN329I
Oil

1000

a 500

J^

IN3292

UJ
cr

a
o

100

a
<

50

Tj. 200'CyL- V Tj= 25(

/
IN3293

A70S

/ //

o
en

S
z

io

5.0

//

IN329<
i
\

A70T

'A

OT

#2

1.0

.5

V
y^
Y'

IN3295

IN3296

^tf--

.1

1.5

2.0

2.5

3.0

200

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

1.

MAXIMUM FORWARD CHARACTERISTICS

400

600

INSTANTANEOUS
2.

MAXIMUM TRANSIENT

800
REVERSE

1000

VOLTAGE

REVERSE CHARACTERISTICS

1200

1400

160'

VOLTS

(Tj

= -40C

+200C)

to

f6

3,4/

/6<t>

900

//
/*
/>*

DC/

80

'

10

V/
/
60

y/oc

/
/

/
^r

A
V

Y,

30
40
50
70
60
80
90
AVERAGE FORWARD CURRENT- AMPERES/CELL

20

10

3.

?oo

100

ISO

AVERAGE FORWARD

AVERAGE FORWARD POWER DISSIPATION

VS. AVERAGE FORWARD CURRENT

4.

VS.

235

200

250

CURRENT- AMPERES /CELL

AVERAGE FORWARD POWER DISSIPATION

AVERAGE FORWARD CURRENT, HIGH IEVEL

N 3289-96, R

A70T

A70S,

A71S, A71T

INSTALLATION INSTRUCTIONS
"T"

Following these installation instructions will result in a diode-to-heatsink thermal resistance of ,10C/watt.

<*

3.

Be sure mounting surface is clean and flat at (.001 inch/inch).

and should be deburred.
Mounting hole diameter should not exceed rectifier stud OD by more than
Use Burndy's "Penetrox A" or equivalent on mounting surfaces which come in contact with the

4.

Use suitable hardware. (Nut and

1.

2.

heatsink.
split

lockwa&her are supplied.)

wrench, to 100 inch-pound*.

Tightei

200

,I"T?3J

^^^

^ ?T"~

ISO

cc

3
<

^^

180

'

DC

>-

t-

-'

3*^

6+\

^140

\
DC

I*

"

120
100
110
90
- AMPERES./CELl

80
60
70
40
50
AVERAGE FOWARD CURRENT

5.

MAXIMUM STUD TEMPERATURE

130

140

160

150

jjt
.

AVERAGE FORWARD CURRENT

VS.

TIME

6.

SECONDS

IN

JUNCTION TO CASE TRANSIENT THERMAL IMPEDANCE

RECURRENT OVERLOAD RATINGS

FOR DIODES MOUNTED ON 7 x 7 x 1 A" COPPER FIN

2000

(E

0.9)

i600

^J

3 2

^>4^

^ki

2.8

\\

r~^~~i

~"~>

Mil
i

^**^.^^

"

L6

1!

fv^

7 8 9

+o 3*

30

10

40

SO 60

1.2

CYCL ES AT 60 CPS
7.

MAXIMUM SURGE CURRENT AT RATED LOAD CONDITIONS

= -40C

(Non-Recurrent) T,

to

+200C

'

200

400

600

800 1000
COOLING

1200

MR

1400

.._

1600

1800

2000 2200

VELOCITY -FT/MIN

STEADY-STATE THERMAL RESISTANCE, JUNCTION TO AMBIENT

VI
a:

2000

v>
tu
a:

UJ

|l600
I

t-

LU

1200

u
Ui
e>

3 eoo
a
c

8
u.

2.0

pulse: time - milliseconds

MAXIMUM SURGE CURRENT FOR

SUB-CYCLE PULSES AT RATED LOAD CONDITIONS

(Non-Recurrent)

T,

= -40C

4.0

60

10

60

20

40 60

100

60

200

400

OOO

1000

OVERLOAD TIME-SECONOS

to

+200C

236

RECURRENT OVERLOAD CURVE MEETING NEMA STANDARDS FOR

Rectifier Equipments Under 100 KW" AT 40C AMBIENT

"General Purpoie

Germanium

Diodes

The General Electric 1N3712 through 1N3720 and 1N3713 through 1N3721 are
Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7, 10, and 22 ma.
These devices, which make use of the quantum mechanical tunneling phenom-

FEATURES:

enon to obtain a negative conductance characteristic, are designed for low level
switching and small signal applications at very high frequencies. All 1N3713-

Vfs Specified for more occurate designing

1N3721 version parameters

of load lines

are closely controlled for use in critical applications

such as level detection, frequency converters, etc. These devices are housed in
General Electric's new hermetically sealed subminiature axial package.

ft^

Low capacitance
Fast speed

AXIAL DIODE OUTLINE

1N3712 1N3714 1N3716 1N371S 1N3720

1N3713 1N3715 1N3717 1N3719 1N3721
Forward Current*

10

25

50

"

ma

100

+%

.110

MAX.

Reverse Current*

10

20

50

50

ma

100

ZXE

.085

MAX

C
.020

Lead Temperature

Xt,"

from case for 10 secor ds

*Derate

maximum

currents

.020

+ .002

Hi"

1%

+ .002

-.001

per C ambient temperature above 25C.

1.000

1.000

MIN.

MIN.

-.001

ALL DIMENSIONS IN INCHES.

DIMENSIONS ARE REFERENCE UNLESS TOLERANCED.

EQUIVALENT CIRCUIT
(BIASED

TYPICAL STATIC
CHARACTERISTIC CURVE
POSITIVE

ELECTRODE

IN

NEGATIVE

CONDUCTANCE REGION)

<&
TUNNEL DIODE SYMBOL

237

NEGATIVE

ELECTRODE

1N3712-21

electrical characteristics:
Min

0.12

Iv

Valley Point Current

Peak Point Voltage

Vv

= Ip typ.)
= typ.)
Forward Voltage
typ.)
(I F = .25

VK

Reverse Voltage (In

Ii.

I,,

Min.

1.1

0.975

0.18

Max.

Min.

Typ.

IN 371 5

1.000

1.025

2.0

2.2

Max.
2.4

0.48

Max.

Min.

Typ.

2.15

2.20

2.25

.210

.310

.165

.095

.140

0.29

58

65

72

65

58

65

72

350

315

355

395

20

40

475

510

535

410

450

315

350

355

500

Vks*

475

510

410

450

40

40

20

40

VFp

Typ.

.075

65

v,.

Valley Point Voltage

Max.

1.0

0.9

Peak Point Current

(Ii-

Typ.

1N3714

1N3713

1N3712
STATIC CHARACTERISTICS

500

535

DYNAMIC CHARACTERISTICS
Total Series Inductance

L*

0.5

Total Series Resistance

Rs

1.5

Valley Point T erminal Capacitance'

4.0

1.7

4.0

1.0

3.0

10

3.5

5.0

10

25

7.5

Max. Negative Terminal Conductance

Resistive Cutoff

Frequency

0.5

0.5

0.5

18

9.5

8.5

16

1.1

3.0

7.0

10.0

19

22

2.3

3.2

2.2

3.0

Self-Resonant Frequency

3.2

3.8

2.2

2.7

Frequency of Oscillation

Fs,

3.2

3.8

2.2

2.7

Rise

1.6

1.7

Time

peak current.
defined as the value of forward voltage at a forward current of one quarter the typical
oscillation
frequency of oscillation (under short circuit conditions) for steady state large signal sinusoidal
equation (3) which is the maximum frequency attainable without capacitance compensation.

*Vks

is

"The

Vk,-

^Switching speed with constant current drive.

is

given Dy

V,.

tr

1.40

^So/p'^Omv
80 m*

1.30

^^55 mv

>
75

m^.

1.20
CjOnw

<
u
e

1.10

65mv
70

70mv

-^

^
X.

IO

'1.00

g
o
UJ
N

75mv^^

\ 55mv\
.90

PEAK CURRENT
VERSUS

O
Z

60mv

AMESIENT TEMPERATURE
AS A FUN CTION OF PEAK VOLTAGE

.80

NEGATIVE C ONDUCTANCE
VER SUS
TEMPEFMATURE
.70
+25
T.-'C

.60

-55

+ 25
T-C

+65

+ 100

238

\v50mvS.

1N3712-21

1N3716
Min.

Typ.

4.2

1N3717

Max.

4.7

0.60

Min.

1N3718

1N3719

Max.

Min.

Typ.

Max.

Min.

Typ.

9.0

10.0

11.0

9.75

10.00

10.25

1.3

2.2

.75

.95

5.2

4.58

4.70

4.82

1.04

.350

.45

.60

Max.

1N3721

Min.

Typ.

Max.

20

22

24

21.5

22

22.5

1.40

2.9

4.8

1.65

2.10

3.10

Min.

Typ.

Max

65

58

65

72

65

58

65

72

65

58

65

72

350

315

355

395

350

315

355

395

350

315

355

395

20

40

20

40

20

40

510

535

475

510

535

475

510

575

410

450

410

450

40

500

475
410

0.5

40
500

450

0.5

.50

2.0

25

0.5

.52

50

40

36

1.8
1.4

1.4

2.0

ro^

2'C

'

"RsIq"

500

0.5

0.5

.36

1.5

.20

1.0

90

27

50

90

150

85

95

180

25

50

41

46

80

75

160

1.0

55

100

pf

190

220

10-

1.6

2.8

1.6

2.6

1.9

.97

1.3

.67

.78

1.0

1.4

.74

.95

(1)

fxo

"(^

:i

mho

KMC
KMC
KMC

1.2

LS

mv

.22

3.4

1.3

ma

nh

0.5

1.5

13

2.0

N'l

40

.30

1.4

1N3720

Typ.

-)

(2)

osc

LS C

-ftr

(3)

1.30
150

Iv

140

TEMPERA TURE CHARAC rERISTICS

no

_l

i.oo

>
e

i?n

o
.80

v FP a v v
1

1.20
LU

10

vP a v R
v P a vR

^vFP
iv

^^

uj

.60

CAPACITANCE

VERSUS
FORWARD VOLTAGE

a vv

-40

.20

100

200

300
V

239

mv

400

500

1N3712-21

G,I
i

Ip

TYPICAL
XCHARACTERISTIC CURVE
\ SHOWING G AND IAS
A FtINCTIOr OF v

f\

/I

si

h
ll

Jlj_
/

iv

\y/

^M

A
-6

240

vFS v FP

High Power

1500
The A190 (1N3735
Pic-Pac 4 250 ampere

Series)

is

Silicon

1N3735-44

Rectifier

A190

250A

Volts

General Electric's highly

Avg.

reliable, all-diffused

silicon rectifier diode.

This series of rectifier diodes is particularly suited to a wide range of industrial applications, expecially those requiring high performance rectifiers.

FEATURES:

TYPICAL APPLICATIONS:

Thermal Fatigue Resistant Pic-Pac

Transportation Equipment

Construction

DC Motor
DC Power

Cathode Strain Buffer

Soft Recovery
1500 Volt V RRM

Control
Supplies

Battery Vehicles

Rugged Hermetic Package

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

REPETITIVE PEAK
REVERSE VOLTAGE
V RRM

NON-REPETITIVE 2

Tj = -40C to +200C

Tj = 25C to +200C

A190A
A190B
A190C
A190D
A190E
A190M

1N3735
1N3736
1N3737
1N3738
1N3739
1N3740

A190S

A190N
A190T

1N3741

A190P
A190PA
A190PB
A190PC
A190PD
A190PE

1N3742

1N3743

1N3744

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

PEAK REVERSE
VOLTAGE, V RSM

200 Volts
300
400
525
650
800
925
1050
1175
1300
1400
1500
1600
1700
1800

DC REVERSE 3
VOLTAGE, V R
Tj = -40C to +200C

100 Volts
300
300
400
500
600
700
800
900

10 & 30 (50 to 400 Hz)

60 (50 to 400 Hz)

250 Amperes
6500 Amperes
(RMS Ampere) 2 Seconds
1.3 Volts

0.18C/Watt
0.24C/Watt

0.30C/Watt
_40C to +200C
-40C to +200C

T stg

Operating Junction Temperature, Tj

Stud Torque (See Mounting Guide)

275 Lb-in (Min.), 325 Lb-in (Max.)

notes:
1

anode (reverse polarity) types. Ratings and specifications

Average Forward Current, I F(AV) (T c = +144C, Single-Phase, Half Sine Wave)

Peak One-Cycle Surge (Non-Repetitive), Forward Current, I FSM
Minimum I 2 t Rating (See Curve 4), t > 1 msec. (Non-Repetitive)
55,000
Peak Forward Voltage Drop, VFM (T c = +144C, I F(AV) = 250 Amps. Average, 785 Amps. Peak)
Thermal Resistance, R0 JC (DC)

Storage Temperature,

Tj = 200C

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

1000
1100
1200
1300
1400
1800

*Models listed are stud cathode (forward polarity) types. Specify A190R-for stud
are for frequencies from 50 to 400 Hz, except where noted otherwise.

REPETITIVE PEAK
REVERSE CURRENT
IrrM Vrrm

31

Assumes a heatsink thermal resistance of less than 2.0C/watt.

and current ratings, as contrasted to repetitive

2 Non-repetitive
voltage

N-m

(Min.), 36.7

N-m

(Max.)

ratings, apply for occasional or unpredictable overloads. For

example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.
Assumes a heatsink thermal resistance of less than 1.0C/watt.
4 "Pic-Pac" is an acronym for Pressure
Internal Contact Package.
3

241

1N373S-44

DEVICE SPECIFICATIONS

A190
10,000

=^=

5,000

x.
J

Q.

<

2 5 C

h-

2,000
""

20C "C

DC

1.000

3**

Z>

500

CC

*
<*

ZOO

//

i_

100

5
-

50

o
UJ

/|

-/ 4/

z
<

30

20
I

1.0

2.0

40

20

4.0

3.0

I00

I20

I60

I40

AVERAGE FORWARD CURRENT

INSTANTANEOUS F0RMH) VOLTAGE- VOLTS

1.

80

60

180

200

220

240

AMPERES/CELL

MAXIMUM CASE TEMPERATURE VS.

AVERAGE FORWARD CURRENT

MAXIMUM FORWARD CHARACTERISTICS

400
V-

O 300
w 5
S 200

DC

*
3./.

&

100

J"

80
60

<

6/
JUNCTION

TtMWHATUBC - 200 # C

KCVCRSC VOLTAM 0

20

100
50
200
AVERAGE FORWARD CURRENT-AMPERES

500

l(

T
T
0.5

6^

U.34

n'

0.2

UJ
lL

Z
-

0.1

<
T

or

.05

en

z
<

02

.001.002

.005.01

02

.05

0.1

0.2

TIME

5.

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATING VS. PULSE TIME
FOLLOWING RATED LOAD CONDITIONS

AVERAGE FORWARD POWER DISSIPATION

VS. AVERAGE FORWARD CURRENT

Z
<
o

PULSE WIDTH-MILLISECONDS

IN

0.5

1.0

10

20

SECONDS

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

242

50

100

DEVICE SPECIFICATIONS

1N3735-44

10,000

A190

2,000

20

I0

CYCLES

S>

60

80

I00

60 Hz

MAXIMUM SURGE CURRENT FOLLOWING

RATED LOAD CONDITIONS

MAXIMUM CIRCUIT RATINGS

DEVICE MOUNTED ON A
1.0

5" x 5" x 6"

ALUMINUM EXTRUSION

(GE#15)

~r~~

6+
9
c

C TO

400

^/,

Ha

.8

Ys

"\*

3*

DC

FREE CONVECTION

V//
,

A
^
.004

,001

.01

^
4

.4

TIME

s+

DC

''^

10

3+

l+,

I0OO

40

100

4001000

FPM

4O00I0.000

SECONDS

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-AMBIENT

2t>o

\ \^

\^

;%
!?

\v^

^-f" <*
-^v.'"',

|\

<^

140

\
X

\
\\
\

18C

20

CONDL CTION A MGLE

40

60

80

\\
\\\
100

120

140

160

ISO

AMBIENT TEMPERATURE-C

SINGLE-PHASE. HALF-WAVE

CURRENT

VS.

FORWARD

AMBIENT TEMPERATURE
243

20C

240

1N3735-44

>

220

A190

200
a.

UJ

|
<

ISO

I60

,_

UJ

rj
o
a

kp- \v>.

I40

^
I20

10

"-

80

>

x>>

\
\\

T*f^

t3gv

UJ

S 60

(r
ui

S 40

I20C0NDUCT10N ANGLE

20
40

20

80

60

100

120

140

160

200

180

AMBIENT TEMPERATURE - C

THREE-PHASE FORWARD CURRENT

VS.

AMBIENT TEMPERATURE

140
120

\<V

K^*
N*^

\^c

p,!\

^H&
^te^

^f

fs*

60 C0ND UCTI DN A^ GLE

V \N
v^s

40

20

60

80

I00 I20

WO

I60

200

80

AMBIENT TEMPERATURE -C

SIX-PHASE

10.

VS.

FORWARD CURRENT

AMBIENT TEMPERATURE

RECURRENT OVERLOAD RATINGS

MINI

Illlll
1

MINI

CIRCUIT

OUTPUT CURRENT
6*
+
3*

ALUMINUM EXTRUSION 6E*I3

RATED CURRENT

,_

(I00*to)

FOR FREE CONVECTION

Tj -FREE CONVECTION
RATED CURRENT (100%
FOR I0O0FT/MINCOOU NG
Tj-IOOOFT/MINCOOLIN G

300

.2

.5

2.0

1-0

5.0

10

20

50

BRIDGE BRIDGE STAR

2 50
350
5 70
ADC
AOC
ADC

100

150*C

360
ADC
II5C

155'C
510

14

0C

ADC

750
ADC

II5C

IIO'C

200

500

OVERLOAD TIME-SECONDS

11.

OVERLOAD CURVE MEETING

NEMA STANDARDS FOR "General Purpose

REPETITIVE
Rectifier

Equipments Under 100

AMBIENT

KW" AT 40C

Than
As Shown, Refer To Application Note 200.9)
(For Overload Conditions Other

244

1N3735-44

DEVICE SPECIFICATIONS

MAXIMUM
DEVICE MOUNTED ON A
MINIMUM FIN SPACING 1 INCH

7" x 7" x 3/8"

A190

CIRCUIT RATINGS

ALUMINUM FIN (GE #13) OR A

COPPER FIN
MOUNTED VERTICALLY OR PARALLEL TO FORCED AIR FLOW
7" x 7" x 1/4"

FINS

260

240

220
v>

DC

04 00

tr

ui

Hz

,*
/'

80

4.

l*,3*

,<!

I60

l-

CONVEC HON"

''/

X \l

I40

N*

y//,

6
4

4
Ay

'&

01

.1

DC

Z 80

LU
y>

IOOOLFPM

'/

TIME
8.

"

r^L

60

100

\
\\

ANGLE

\\

000

SECONDS

^\

TRANSIENT THERMAL IMPEDANCE

20

-JUNCTION TO AMBIENT

12.

N \s

,\\

10

^J

6f

'

>t

'
'

&

180 CONDUCTION
0 01

T\ *

CO

Q.

DC

V*

200

6+

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-AMBI ENT

13.

40 60 80 100 120 140 160

AMBIENT TEMPERATURE --C

SINGLE-PHASE, HALF-WAVE

CURRENT

VS.

200

180

FORWARD

AMBIENT TEMPERATURE

I80

;ieo
|

140

"^

120
i

"*>L

100

\'0-

*5^

'v

v>

-*^l

80
60

40
60 CONDUCT ON ANG _E

20

20

40

60

80

AMBIENT TEMPERATURE-C

14.

100

120

140

160

200

180

AMBIENT TEMPERATURE - C

THREE-PHASE FORWARD CURRENT

VS.

REPETITIVE

FORWARD CURRENT

SIX-PHASE

15.

AMBIENT TEMPERATURE

VS.

AMBIENT TEMPERATURE

OVERLOAD RATINGS

iiiii

FOR DIODE MOUNTED ON

7X7X3/8 ALUMINUM FIN (GE*I 3)
OR 7X7X I/4 COPPER FIN

CIRCUIT

OUTPUT CURRENT

6*

3*

BRIDG E BRIDGE STAR

245
410

RATEO CURRENT {100 %)

175
FOR F ?EE CONVECTIO
ADC
Tj-FREE CONVECTIOr.
I75C
RATED CURRENT (IOOH a)
290
FOB I000 FT/MIN COOL NG
AOC

ADC

AOC

I63'C

I65'C

AOC

630
AOC

FT/MIN COOLIN G

I4B*C

I36'C

Tj- 1000

16.

OVERLOAD CURVE MEETING

NEMA STANDARDS FOR "General Purpose

REPETITIVE
Rectifier

Equipments Under 100

,_

I48*C

410

200

KW" AT 40C

AMBIENT

(For Overload Conditions Other Than

As Shown, Refer To Application Note 200.9)

OVERLOAD TIME- SECONDS

245

1N3735-44
A190

OUTLINE DRAWING
TABLE OF DIMENSIONS
Conversion Table

SEATING PLANE
SYM.

A
B
C

MODEL

AI90

POLARITY
AI90R

REVERSE

THREAD

ANODE

CATHODE

CATHODE

ANODE

FORWARD

3/4

SIZE

1.450
.500

1.550

36.83
12.70
58.42
134.62
20.24

19.05
63.50
144.78

16.89

19.18

8.17

8.46

.750
2.500
5.700

.797

.827

.665

.755
.333

.322

.437

Q
TERMINAL

MIN.

TERMINAL

MAX.

NOTES

MAX.

MIIM.

2.300
5.300

METRIC MM

DECIMAL INCHES

.325
.155
1.060
.660

1.240

11.99

.360

8.25

.170

1.100
.749

21.01

9.14

26.92
16.76

27.94
19.02
3.96
31.75

.156

31.49

1.250

39.37

NOTES:

16

Copper Lead.

1.

Flexible

2.

One Nut and One Lockwasher Supplied With Each

3.

Hardware is Steel, Cad Plated.

"T" Dimension is Area of Unthreaded Portion. Complete Threads

UNF - 2A

Unit. Material of

are Within 2.5 Threads of Seating Plane.

POLARITY

4.

Angular Orientation of Terminals

is

Undefined.

MOUNTING INSTRUCTIONS
Following these installation instructions will result in a rectifier diode-to-heatsink contact thermal resistance of 0.08C/watt
or

less.

clean and

within .001 inch/inch.

1.

Be sure mounting surface

2.

Mounting hole diameter should not exceed the outside diameter of the

is

flat

rectifier

diode stud by more than 1/16 inch,

and should be deburred.

3.

Use

Dow

Coming's DC3,

4,

340 or 640 or

GE G322L or

equivalent,

the heatsink.
4.

Use only hardware furnished with each

5.

Tighten with a torque wrench, from nut side, to 300

rectifier diode.
lb-in.

246

on mounting surfaces that come

in

contact with

SEE PAGE 209

1IM3765 68

Silicon

IN3879-83.R

RECTIFIERS
FAST RECOVERY

Features:
Fast Recovery Time

...

200 Nanoseconds

/ O)

Maximum

Diffused Construction

For Use in:

Sonar Power Supplies

_ Ultrasonic Systems
DC-DC Power Supplies

verters

^
Choppers
Low RF Interference Applications
Free-Wheeling Rectifier Applications
maximum

allowable ratings

(Resistive or Inductive Load)

1N3879,R

Maximum

Repetitive Peak Reverse Voltage,

150C, VRM (rep) (Note 1)

Maximum RMS Voltage,

*Maximum DC Blocking
(Note 1)

Maximum

+ 100C,

_ 65 C

T.,

1N3880,R

1N3881.R

1N3882.R

50
35

100
70

200
140

300
210

400 Volts
280 Volts

50

100

200

300

400

1N3883.R

to

'

T, = -65C to +150C, V r (Note 1)

Voltage, T.T =
65C to -HO0C, V r
.

.'

'

Average Forward Current, Single Phase, T

Volts

=
_

Maximum

Peak One Cycle Surge Current, 60 Cycle, NonRecurrent, T, = -65C to +150C, I PM (surge)
Maximum Peak Ten Cycle Surge Current, 60 Cycle,
Non-Recurrent, T, = -65C to +150C, I FM (surge)
Maximum Forward Voltage Drop, I F = 6 A DC, T =
+25C, V F

Amperes

75 Amperes

35 Amperes

.,

1.4 volts

Maximum Reverse Current at Full Load, Single Phase Full-Cycle

Average, I = 6 Amp at TV = +100C, I R(AV)
Maximum DC Reverse Current at Rated DC Blocking Voltage,
V H and T c = +100C, I R
Maximum DC Reverse Current at Rated DC Blocking Voltage,
V R and T c = +25C, I R

-.

3.0

mA

1.0

mA

^A

Junction Operating Temperature Range, T.T

Storage Temperature Range, T tB
Stud Torque
Maximum Reverse Recovery Characteristics (See figure below)
Recovery Time, t
Peak Recovery Current, I R (recovery) (Note 2)

15

65C to +150C
65Cto -f 175C
15 j n _i bs Maximum

*The asterisk denotes

JEDEC

200 Nanoseconds

2.0

Maximum

Amperes Maximum

(EIA) registered information.

test conditions
These

rectifiers are factory tested to reverse recovery limits which correlate with EIA registered values.
ing is in accordance with
recommendations for silicon rectifier diodes and stacks.

NEMA-EIA

This test-

Recovery characteristic test conditions I FM = 5.0 amps di/dt = 50 amps//usec switching rate, and a reverse bias
50% V R for 200, 300 and 400 volt grades or. 100% V R for 50 and 100 volt grades T r = 25 C t rr = 150 nanoseconds; and I,, (recovery) = 5.0 amperes max.
:

of

If
F

If

V-W-^
\

'R

..

/ TIME

y^

V/

^~-/l (RECOVERY)
1l

Ip

TIME

(RECOVERY)

TYPICAL RECOVERY WAVE FORMS

nmT ,
NOTES:
1.

Rating- assumes rectifier heatsink

TYPICAL RECOVERY WAVE FORMS

g6C/W

at

max.

Tj.

2.

Some manufacturers
247

call this

Overshoot Current and use the symbol

I*.

>

"i(

1N3879-83, R

a.

"T/
u>

\
\\

<

3
u 4
o

\
\

*
ill

o
<I

UJ

3
L.2
o

k-

\\
11

90

70
T..-CASE

1.

NOTE

130

110

TEMPERATURE^C ]-"C

Forward Current Rating vs. Case Temperature

Case temperature

is

measured at the center of any

flat

on the hex base.

OUTLINE DRAWING
INSULATING HARDWARE
KIT*

DIRECTION OF EASY CONVENTIONAL

CURRENT FLOW

10-32

-UNF-2A
0t
DIA-

.078^

NUT
10-32 STEEL
CADMIUM PLATED
LOCKWASHER,
PLATED

CADMIUM
STEEL

^-.oso R

DIA.

COPPER TERMINAL, .016

THICK, TIN PLATED

COMPLIES WITH

BRASS WASH ER..035

THICK
NICKEL PLATED
(|)MICA WASHERS. TWO, .625
O.D., .204
D.,.005 THICK

EIA REGISTERED OUTLINE

I.

TEFLON WASHER..270
.204 D.,.050 THICK

SYMBOL

O.D.

I.

AVAILABLE UPON REQUEST

MILLIMETERS

INCHES
MIN.

DO-4

MAX.

MIN.

MAX.

.405

10.29

<t>T>

.424

10.77

E
F

.424

.437

10.77

11.10

.075

.175

1.91

4.45

.800

.250

N
<j)t

.422
.060

.453

NOTES

20.32
6.35

10.72

11.51

1.52

NOTES:
1.

2.

Angular orientation of this terminal is undefined.

10-32 TJNF-2A. Maximum pitch diameter of plated threads shall be basic
pitch diameter (.1697", 4.29 MM) Ref. (Screw thread standards for Federal
Services 1957) Handbook H28 1957 PI.
248

Silicon

IN3889-93.R

Rectifiers
FAST RECOVERY

Features:
Fast Recovery Time

200 Nanoseconds

Maximum

/f O)

Diffused Construction
For Use in
Inverters

Choppers
Low RF Interference Applications
Free-Wheeling Rectifier Applications

maximum

allowable ratings

-r^w
v

_ Sonar Power Supplies

_ Ultrasonic Systems
DC-DC Power Supplies
(Resistive or Inductive Load)
1N3889,R

*Maximum Repetitive Peak Reverse Voltage, T, = 65C to

+150C,V KM (rep) (Note 1)
Maximum RMS Voltage, T. = -65C to +150C,V (Note 1).
Maximum DC Blocking Voltage, T = 65C to + 100C, V K
T

1N3890.R

1N3891.R

1N3892.R

1N3893.R

50
35

100
70

200
140

300
210

400
280

Volts
Volts

50

100

200

300

400

Volts

(Notel)

*Maximum Average Forward

Current, Single Phase,

T = +100C, I
Peak One Cycle Surge Current, 60 Cvcle, NonRecurrent, T. = 65C to + 150C, Lm (surge)
Maximum Peak Ten Cycle Surge Current, 60 cycle, NonRecurrent, T. = -65C to +150C, I PM (surge)

Amperes

12

Maximum

150 Amperes

70 Amperes
1.4 Volts

Maximum Forward Voltage Drop, I F = 12 ADC, T r = +25C, V,,

Maximum Reverse Current at Full Load, Single Phase Full-Cvle
Average,

= 12 Amp.

at

Tr =

Maximum DC Reverse Current

VR and T c = -f 100C, I R
Maximum DC Reverse Current
V R and T c = +25C, I

at

-f-100C, I K(AV)

Rated

DC

at Rated

DC

3.0

mA

25 /*A

65C
65C

to -f 150C
to +175C

15 in-lbs.

Maximum

Maximum
Amperes Maximum

200 Nanoseconds

rl

JEDEC

mA

Blocking Voltage,

Junction Operating Temperature Range, T.

Storage Temperature Range, T, tB
Stud Torque
Maximum Reverse Recovery Characteristics:
(See figure below) Recovery Time, t
Peak Recovery Current, I n (recovery) (Note 2)
*The asterisk denotes

5.0

Blocking Voltage,

2.0

(EIA) registered information.

test conditions
These

rectifiers are factory tested to reverse recovery limits which correlate with EIA registered values.
ing is in accordance with
recommendations for silicon rectifier diodes and stacks.

NEMA-EIA

This test-

Recovery characteristic test conditions I FM = 5.0 amps; di/dt = 50 amps//u,sec switching rate, and a reverse bias
50% V R for 200, 300 and 400 volt grades or 100% V K for 50 and 100 volt grades T r = 25C
= 150 nanoseconds; and I K (recovery) = 5.0 amperes max.
:

of

If

'f

t,. r

It

V-t
V

L*-
.

'R

/ TIME

j^

\-/ Ip (RECOVERY)

TIME-*

^-/-- I (RECOVERY)

TYPICAL RECOVERY WAVE FORMS

TYPICAL RECOVERY

NOTES:
1.

Rating assumes

rectifier

heatsink

g6C/W

at

max.

Tj.

2.

WAVE FORMS

Some manufacturers
249

call this

Overshoot Current and use the symbol

I os

14

-i.tr

12

(I

1N3889-93,R

\
\
V

\
V

\
\

-^
T.-CASE TEMPERATURE-<Tc)-

1.

NOTE

Forward Current Rating vs. Case Temperature

Case temperature

is

measured at the center of any

flat

on the hex base.

OUTLINE DRAWING
DIRECTION OF EASY CONVENTIONAL

CURRENT FLOW
INSULATING HARDWARE
KIT*

10-32

UNF-2A

DIA-^

10-32 STEEL NUT

CADMIUM PLATED
LOCKWASHER,

CADMIUM PLATED
STEEL

.080 R

COMPLIES WITH

COPPER TERMINAL, OI6

EIA REGISTERED OUTLINE

THICK, TIN PLATED

BRASS WASHER..035 THICK
NICKEL PLATED
(|)MICA WASHERS. TWO, .625
O.D., .204 ID.,.005 THICK

SYMBOL

.405

10.29

TEFLON WASHER..270

4>D

.424

10.77

MINT.

O.D.

.204 I.D.,.050 THICK

E
F

* AVAILABLE UPON REQUEST

MIN.

.437

10.77

.075

.175

1.91

4>t

MAX.

.424

.060

.453

NOTES

11.10
4.45

6.35

.250

.422

MAX.

20.32

.800

m
N

MILLI] IKTERS

INC *ES

DO-4

10.72

11.51

1.52

NOTES:
1.

Angular orientation of this terminal is undefined.

10-32 TJNF-2A. Maximum pitch diameter of plated threads shall be basic
pitch diameter (.1697", 4.29 MM) Ref. (Screw thread standards for Federal
Services 1957) Handbook H28 1957 PI.

250

Silicon

1N3899-3903.R1

Diodes

Features:
Fast Recovery

Time200

Maximum

Nanoseconds

Recovery Characteristics match the High Frequency capability of the new

General Electric High Speed SCR's such as the C140 and 141, the C155

and C185
For Use in

Inverters
Choppers
Low RF Interference Applications
Free- Wheeling
Applications

Sonar Power Supplies

Ultrasonic Systems
DC-DC Power Supplies

Rectifier

maximum

allowable ratings

(Resistive or Inductive Load)

1N3899,R

Maximum

Repetitive Peak Reverse Voltage, T.T

+150C, V KM (rep) (Note 1)

65C

'

Maximum RMS

Maximum DC

Voltage, Tj = -65C to +150C, V r

Blocking Voltage, T T =
65C to +100C,

(Note 1)

Maximum

+ 100C,

1N3900.R

1N3901,R

1N3902,R

1N3903,R

50
35

100
70

200
140

300
210

400
280

Volts
Volts

50

100

200

300

400

Volts

to

Vr

;...

Average Forward Current, Single Phase, T r =

'...

20 Amperes

Maximum

Peak One Cycle Surge Current, 60 cycle, NonRecurrent, Tj = 65C to +150C, I FM (surge)
Maximum Peak Ten Cycle Surge Current, 60 cycle, NonRecurrent, Tj = -65C to -f 150C, I FM (surge)
Maximum Forward Voltage Drop, I P = 20 ADC, T r = +25C, V,.Maximum Reverse Current at Full Load, Single Phase FullCycle Average, I = 20 Amp. at T c = +100C, I,, AV)
Maximum Effective Thermal Resistance (Junction to Case), r

225 Amperes

120 Amperes-

iT .

Maximum DC Reverse Current

V K> and T c = +100C, I R
Maximum DC Reverse Current
V R and T = -f 25C, I R
.

at Rated
at

Rated

DC
DC

stf:

- 6.0

mA

-65C
_65C
30

/jlA-

to

to

in-lbs.

+150C+175C

Maximum

200 Nanoseconds Maximum-

rI

I s)

JEDEC

C/W-

-50
T

*The asterisk denotes

mA-

1.5

Blocking Voltage,

Junction Operating Temperature Range, T,

Storage Temperature Range, T
Stud Torque
Maximum Reverse Recovery Characteristics
Recovery Time (Note 2) t
Peak Recovery Current (Note 2), I,. (recovery)
(or Overshoot Current,

-10.0

Blocking Voltage,

1.4 Volts

3.0

Amperes Maximum

(EIA) registered information.

NOTES:
1.

2.

The ratings assume the

rectifier heatsink thermal resistance to be 6C/W or less at maximum junction temperature.

These rectifiers are factory tested to reverse recovery limits which correlate with EIA registered values. This testing
ance with NEMA-EIA recommendations for silicon rectifier diodes and stacks.

y ch? r,teri ;itic te conditio 2 s

Sfnonn
200, 300 and 400 volt grades or 100%
6.0 amperes max.

VR

5 -

for 50

is

in accord-

am P s di/dt = 50 amps/z^ec switching rate, and a reverse bias of 50% V for

and 100 volt grades; T c = 25C; t = 150 nanoseconds; and I K (recovery) "~
*
">

'

251

1N 3899-3903, R

90

70

IIO

I30

T--CASE TEMPERKTURE-IT C )-'C

1.

Forward Current Rating vs. Case Temperature

Note Case temperature, Tc,

:

is

measured at center of any

flat

on hex base.

OUTLINE DRAWING
SYMBOL

INCHES
MAX.
MIN.

MILLIMETERS
NOTES
MAX.
MIN.

.450

11.43

.375

9.53

.080

2.03

<D

.667

16.94

.667

.687

16.94

17.45

.115

.200

2.92

5.08

Fl

.060

DIRECTION OF FOWARO CURRENT FLOW

FORWARD POLARITY
f4

REVERSE POLARITY

TERM.

NOTES:
I.COMPLETE THREADS TO EXTEND TO WITHIN 2-1/2
THREADS OF SEATING PLANE.
2. ANGULAR ORIENTATION OF TERMINAL IS UNDEFINED.
3 1/4-28 UNF-2A. MAXIMUM PITCH DIAMETER OF PLATED
THREADS SHALL BE BASIC PITCH DIAMETER (.2268", 5.74MM)
REF. (SCREW THREAD STANDARDS FOR FEDERAL SERVICES

PLANE

25.40

1.000

3.96

.156

<M

.220

.249

5.59

.422

.453

10.72

11.51

.175

356

4.45

*t

.140

6.32

1.52

1957)
4.

HANDBOOK H28

1957 PI.

MINIMUM FLAT.

EIA-NEMA STANDARD OUTLINE, NEMA SK-51 - EIA RS-241.

INSULATING HARDWARE IS AVAILABLE UPON REQUEST.

1.3

COMPLIES WITH EIA REGISTERED OUTLINE DO-5

252

1N3909-13.R

Fast Recovery

Rectifiers

Features:
Fast Recovery Time- -200 Nanoseconds

Maximum

Recovery Characteristics match the High Frequency capability of the new

General Electric High Speed SCR's such as the C140 and 141, the C155
and C185

For Use

in
Inverters
Choppers
Low RF Interference Applications
Free- Wheeling Rectifier Applications

maximum

allowable ratings

Sonar Power Supplies

Ultrasonic Systems
DC-DC Power Supplies
(Resistive or Inductive Load)
1N3910.R

1N3911,R

1N3912,R

1N3913.R

50
35

100
70

200
140

300
210

400
280

Volts
Volts

50

100

200

300

400

Volts

1N3909.R

Maximum

Repetitive Peak Reverse Voltage, T T =

65 C to
150C, V KM (rep) (Note 1)
Maximum
Voltage, T.T = 65C to +150C, V r
Maximum DC Blocking Voltage, T T = -65C to +100C, V K

RMS

(Notel)

Maximum Average Forward Current, Single

T = + 100C, I
* Maximum Peak One Cvcle Surge Current, 60

Recurrent, Tj

65C to +150C, I FM

Phase,

30 Amperes
cycle,

(surge)

300 Amperes

160 Amperes
1.4 Volts

Maximum Peak Ten

Cycle Surge Current, 60 cycle, NonRecurrent, T. = 65C to +150C, I KM (surge)

*Maximum Forward Voltage Drop, I P = 30 ADC, T c = +25C, V,,
Maximum Reverse Current at Full Load, Single Phase Full-Cycle
Average, I = 30 Amp. at T r = +100C, Ir,av)
Maximum Effective Thermal Resistance (Junction to Case), 0,T r
* Maximum DC Reverse Current at Rated DC Blocking Voltage,
V R and T r = +100C, I K
*Maximum DC Reverse Current at Rated DC Blocking Voltage,
V K and T c = +25C, I R
Junction Operating Temperature Range, T,
Storage Temperature Range, T st
Stud Torque
Maximum Reverse Recovery Characteristics
Recovery Time (Note 2) t
Peak Recovery Current (Note 2), I u (recovery) (or Overshoot
*

Non-

-*

The asterisk denotes JEDEC

mA

80 fiA
-

65C

to

-fl50C

65C

to

+175C

30
-*

r,

Current, I os )

mA
C/W

10.0

15-0
1-0

in-lbs.

Maximum

200 Nanoseconds
3.0

Maximum

Amperes Maximum

(EIA) registered information.

NOTES:
1.

2.

rectifier heatsink thermal resistance to be 6C/W or less at maximum junction temperature.

These rectifiers are factory tested to reverse recovery limits which correlate with EIA registered values. This testing is in accordance with NEMA-EIA recommendations for silicon rectifier diodes and stacks.
Recovery characteristic test conditions: I FM = 5.0 amps; di/dt = 50 amps//xsec switching rate, and a reverse bias of 50% Vn for
200, 300 and 400 volt grades or 100% V R for 50 and 100 volt grades; Tc = 25C; t rr = 150 nanoseconds; and I (recovery) =
6.0 amperes max.

The ratings assume the

253

1N 3909- 13, R

i*

-ih

3*
-i*-

6*

no

90

70

T.-CASE TEMPERATURE- C

Forward Current Rating

1.

Note: Case temperature, 1Y,

is

vs.

Case Temperature

measured at center of any

flat

on hex base.

OUTLINE DRAWING
SYMBOL

INCHES
MAX.
MIN.

MILLIMETERS
NOTES
MAX.
MIN.

.450

11.43

.375

9.53

.080

2.03

<f>0

.667

16.94

DIRECTION OF FOWARD CURRENT FLOW:

FORWARD POLARITY
H

REVERSE POLARITY
TERM.

.667

.687

16.94

17.45

TERM^h-F,

.115

.200

2.92

5.08

SEATING --A-

Fl

.060

PLANE

25.40

3.96

.156

4>M

.220

.249

5.59

N
*t

.422

.453

10.72

11.51

.140

.175

3.56

4.45

NOTES:

COMPLETE THREADS TO EXTEND TO WITHIN 2-1/2

THREADS OF SEATING PLANE.
2 ANGULAR ORIENTATION OF TERMINAL IS UNDEFINED.
OF PLATED
3 1/4-28 UNF-2A. MAXIMUM PITCH DIAMETER
THREADS SHALL BE BASIC PITCH DIAMETER (.2268, 5.74MM)
REF. (SCREW THREAD STANDARDS FOR FEDERAL SERVICES
1957) HANDBOOK H28 1957 PI.

1.52

1.000

6.32

'

4.

MINIMUM FLAT.

EIA-NEMA STANDARD OUTLINE NEMA SK-51 - EIA RS-241.

INSULATING HARDWARE IS AVAILABLE UPON REQUEST.
,

1,3

COMPLIES WITH EIA REGISTERED OUTLINE DO-5

254

Silicon

1N4044-56.R1

RECTIFIERS

The A190 (1N3735) Series is General

250 ampere silicon rectifier diode.

The proven

benefits of

Low

Great uniformity of product

Higher surge current capabilities

AND

E.'s high current rectifier diodes are:

Choice of stud anode or stud cathode type

Thermal fatigue resistant

RATINGS

G.

reverse current

SPECIFICATIONS:*
1

*Maximum

Electric's highly reliable, all-diffused Pic Pac

1'

N4044

N4045

N4046

N4047

N4048

N4049

N4050 1 N4051

N4052

N4053

N4054

Allowable Transient Peak

Reverse Voltage,

N4055

N4056

V KM (non-rep)

(non-repetitive, 8.33 millisecond

half sine

wave

pulse)

<z>

100

200

250

300

350

400

525

650

800

925

1050

1175

1300

Blocking Voltage, V*'"

50
* Maximum Allowable Average
Forward Current, I, lAVi (single phase,

120C case temperature)

'Maximum Allowable Peak One-Cycle
Surge Current, I,sm (60 cps

100

150

200

250

300

400

500

600

700

800

900

1000

*Maximum

Allowable Working and

Repetitive Peak Reverse Voltage,

V BM (wkg) &

VR H (rep)

"\

and

DC

single-phase basis, non-repetitive)

(non-repetitive)

Minimum Ft Rating
*

Maximum Peak Forward

Drop,

275 amperes

5000 amperes
50,000 amperes- seconds (see Chart 6)

Voltage

V TM (Io=275 amps DC,

T C =120C)
* Maximum Full Load Reverse

1.35 volts

Current, I r <av> (full-cycle average,

120 C case temperature, single
phase)
Maximum Thermal Resistance, R,i
(junction to case)
*Storage and Junction Operating

15 milliamperes

l(

Temperature,
Stud Torque 15
NOTES:

0.18C/watt

-65C

T,-

'

Maximum
Minimum

to

+19CC

325 inch-pounds (375 kg-cm)

275 inch-pounds (320 kg-cm)

'"Models listed are stud cathode (forward polarity) types. Order 1N40_.R for stud anode (reverse polarity)
types. Ratings and specifications are for frequencies from 50 up to 400 cycles/second, except where noted
differently.

'Non-repetitive voltage and current ratings, as contrasted to repetitive ratings, are ratings which apply
for
occasional or unpredictable overloads. For example, the forward surge current ratings are non-repetitive
ratings that are used in fault co-ordination work.
"'Rating assumes a rectifier diode heat sink dissipation of 2.0C/watt, or less.
"'Rating assumes a rectifier diode heat sink dissipation of 1.0C/watt, or less.
""Use of a silicone grease (G-E #G623) between the rectifier base and heat sink is recommended.
^Indicates JEDEC Registration Parameters.
l2

255

1N4044-56, R

IZOO

/
i

et

lOOO

/
|r

3*

//

Tc - +I90"C^TC

+ZVC

/
!

/
IOO

1
i

/,/

//

/
s

140

170

DC/

Id

aj

130

1
J

120

/V
/>

E
>

30

ejr

>

I8>

DC

no

100
w

1
1

25

3 5

200

AVERA6E FORWARD CURRENT - AMPERES

INSTANTANEOUS FORWARD VOLTAGE -VOLTS

MAXIMUM FORWARD

50

BOO

600

400

r-

CHARACTERISTICS

AVERAGE FORWARD POWER DISSIPATION

AVERAGE FORWARD CURRENT (Tc = +190C)

3.

2.

VS.

100

150

200

250

400

350

300

AVERAGE FORWARD CURRENT - AMPERES

MAXIMUM CASE TEMPERATURE

VS.

AVERAGE FORWARD CURRENT

CYCLES AT 60 CPS

5.

TIME (AFTER START OF CURRENT FLOW)

4.

TRANSIENT THERMAL RESISTANCE

JUNCTION TO CASE

MAXIMUM SURGE CURRENT FOLLOWING

RATED LOAD CONDITIONS

(Tc

= -65C TO

+190C)

OUTLINE DRAWING

7000

TABLE OF DIMENSIONS

6000

Conversion Table

SEATING PLANE
SYM.
5000

DECIMAL INCHES

MIN.

MAX.

36.83
12.70
58.42
134.62
20.24

39.37
19.05
63.50
144.78

16.89

19.18

8.17

8.46

11.99
8.25

9.14

C
F

.797

.827

3000

.665
.322

.755
.333

M
N

3456789

PULSE TIME - MILLISECONDS

6.

SUBCYCLE SURGE FORWARD

CURRENT FOLLOWING RATED
LOAD CONDITIONS
(Tc = -65C TO +190C)

MODEL

TERMINAL

THREAD

SIZE

10

IN4044-56

IN4044-56R

- [ANODE)
+

(CATHODE)

(CATHODE)
- (ANODE)

3/4

16

21.01

26.92
16.76

27.94
19.02
3.96
31.76

.156

1.240

1.250

31.49

NOTES

NOTES:
Copper Lead.

1.

Flexible

2.

One Nut and One Lockwasher Supplied With Each

3.

"T" Dimension

Hardware

UNF - 2A
4.

256

.360
.170
1.100
.749

.165
1.060
.660

TERMINAL

.437
.325

1000

MM

MAX.
1.550
.750
2.500
5.700

4000

ZOOO

METRIC

MIN.

1.460
.500
2.300
5.300

is

Steel,

Cad

Unit. Material of

Plated.

Area of Unthreaded Portion. Complete Threads

are Within 2.5 Threads of Seating Plane.
Angular Orientation of Terminals is Undefined.
is

Germanium

1N4090

Diode

The General

Germanium Tunnel Mixer Diode

Electric

alloy-junction Tunnel

device

designed

for

use

UHF

as

Type 1N4090 is an
and microwave mixer.

Exhibiting a nonlinear VI characteristic, going through zero at the origin, makes

this unit also very attractive for use as low level detector. The
1N4090 features
very low capacitance, series resistance, video and I.F. impedances as well
as

extremely low turn-on and turn-off characteristics. The 1/f noise contribution
much lower than in point-contact mixers.

absolute

maximum

ratings: (25C)(unie SS o therwise

Forward Current (-55 to +100C)

Reverse Current (-55 to +100C)
Lead Temperature 1/16" 1/31"
from case for 10 seconds
Storage Temperature Range

5
5

is

specified)

ma
ma

sc

55C

1.000
+ .030

+100C

to

electrical characteristics: (25C)(u nless otherwise

Min.

Total Terminal Capacitance

Total Series Resistance
Total Series Inductance
Peak-Point Current
Peak-Point Voltage
at

IF

at If
at Ir

Reverse Voltage

at

Forward Voltage

at

L
I

=180 ua
=1 ma

=2 ma
=5 ma
Rmax
I Fmax
=5 ma

Reverse Voltage

c
R

vP
V Fp
vF
vR

IN

INCHES AND ARE

1.000

REFERENCE UNLESS TOLERANCED.

specified)

Typ.

Max.

1.0

1.5

4.5

10.0

pfd

0.2

130

160

180

ua

50

62

75

mv
mv
mv
mv
mv
mv
mv

-.095 MAX.

-.000
ALL DIMEN.

Forward Voltage
Forward Voltage

Z3(B

260C

430

500

80

100

120

Rmax

110

250

Fmax

nh

vv

520
275

Valley Voltage

Peak to Valley Ratio

Recovery Time*

Ip/Iv

4:1

ratio

0.1

nsec

tr

*The recovery time is measured to a reverse current of 1 ma when switching from 0.1 volt forward
to 0.4 volt
reverse from a 50
source. Since this diode does not exhibit charge storage, the recovery time is determined
by
the charging time of the total device capacity.

257

1N41 48-49

SEE PAGE 205

Silicon

Signal Diodes

1N4150

1N4450

1N4606
This family of General Electric Double Heatsink diodes are high conductance, high
speed low capacitance switching units for core and hammer driver circuits and
general purpose applications. These diodes incorporate an oxide passivated planar
structure built in a high resistivity, epitaxial layer grown on a low resistivity substrate.

The 1N4150 and 1N4606 feature

mum

forward voltages at

controlled conductance,with minimum and maxiforward current. The 1N4450 offers con-

five levels of

trolled conductance at four levels of I,.- from lOO^A to 50mA with a maximum
voltage of 1.0 volts at 200mA. This closely controlled conductance is necessary for
the design of clamping and logic circuits where tight tolerances on voltage levels

are required.

absolute

maximum

ratings:

(25C)
1N4450

1N4150

30

50

N4606

Voltage

Reverse

Volts

70

Average

mA
mA
mA

200

Rectified

Recurrent Peak Forward

Forward Steady-State DC
Peak Forward Surge (1 ^sec. pulse)

600-

2504

Power
Dissipation*

O 155
O 140

-I 250

Current

AmpS

180

022
-022.

MAX

1
y

1
032^002

D.A.-

CATHODE END- J

mW

500

NOTE: ALL DIMENSIONS

IN

INCHES

Temperature

Operating
Storage

mW/C

Derate 2.85

for ambient temperatures above

electrical characteristics:

25C based on a

(25C)

-65

to

+200-

-65

to

+200

maximum

C
C

junction temperature of 200C.

(unless otherwise specified)

= 100 M A)
(If = 1mA)
(I r = 10mA)
(I F = 50mA) f
(I F = 100mA) f
(I F = 200mA) t
(I F = 250mA) f
(If

VF
Vf
Vf
Vf
Vf

420
520
640
800

VF

1N4606

IN4150

1N4450
Min.

Forward Voltage

Max.
540

Min.

Max.

Min.

Max.

640
720
920

540
660
760
820
870

620
740
860
920
1000

540
650
740
790
860

660
770
860
920
1000
1100

1000

Vf

mV
mV
mV
mV
mV
mV
mV

Breakdown Voltage
(Ir

(Ir

= 5 M A)
= 100/iA)

Bv
By

Volts
Volts

40
85

Reverse Current

= 30V)
= 30V, T A = +150C)
= 50V)
(Vh = 50V, T A = +100C)
(Vr = 50V, T A = + 150C)
(Vb = 70V)

(V*

Ir

(V B
(Vr

Ir

nA

50
50

/xA

100

Ir
Ir

100

nA

25

/iA

fiA

100

Ir

250

Ir

258

nA

1N4150
1N4450

1N4606

electrical characteristics:

(25C)

(unless otherwise specified)

1

N4450

Min.

(V E =OV)$

1N4150
Max.

Capacitance

Min.

Co

1N4606
Max.

Max.

Min.

2.5

pF

2.5

Reverse Recovery Time

= I E = 10 to 200mA,
= 0.1I F Fig. 3)
(If = I E = 200 to 400mA,
I = 0.1I F Fig. 3)
(If = 10mA, Ie = 1mA,
I = 0.1mA, Fig. 1)
(If = Ik = 10 mA,I = 1mA,
(Ip

Irr

Figs.

1,

& 6)

= Ie = 10 to 200mA,
I = 0.1I F Fig. 4)
(If = Ie = 200 to 400mA,
lr, = 0.1I F Fig. 4)

(If

ns

ns

42

PC

Forward Recovery Time

(If
tp

= 200mA, t = 0.4 nsec,

= 100 nsec, V, = 1.0V,
r

Stored Charge (Note

(If

Fig. 5)

t, r

10

1)

10mA)

Qs

42

42

tPulsed measurement. Pulse width == 300 fisec. Duty Cycle 2%.

{Capacitance as measured on Boonton Model 75A capacitance bridge at a signal level
of 50
and a frequency of 1MHz
Stored charge is. measured on B-Line Electronics Model QS-3 stored charge
meter. Pulse amplitude = 5 volts, pulse width
source impedence =: 10 ohms.

mV

NOTE:

1:

50 nsec, rise time

0.4

STORED CHARGE

When a forward biased diode is subjected to a reverse voltage step a reverse current
will flow for a short time as a result of the stored charge consisting of minority
carriers
in the vicinity of the junction. The typical waveform of reverse current vs time

for a
diode subjected to a large reverse voltage is shown in Figure 1. The time required for
the diode to recover its reverse blocking condition will depend on the quantity of charge
stored and the rate at which the charge is removed by recombination inside the
diode

and by current flowing in the external circuit. Conventionally, the speed of a diode is
characterized by the reverse recovery time, t, measured to some arbitrary current
level as in Figure 1. However, for higher speed diodes reverse recovery
time is not a
satisfactory parameter for characterizing the speed of the diode since it is dependent
on arbitrary circuit conditions and is very dependent on the construction of the test
circuit. Stored charge, on the other hand, is measured by integrating the
reverse current of the diode (as shown by the shaded area in Figure 1), and is consequently much
less dependent on the construction of the test circuit and on arbitrary circuit conditions.
Stored charge is a more ideal parameter for characterizing the speed of a diode since
it represents an intrinsic characteristic of the diode and can
be measured with good
reproducibility on low cost instruments which have direct meter readout.
Stored charge can be correlated with reverse recovery time measurements on a
specific trr test jig.

Typical correlation curves are shown on the graph below.

References
(1)
(2)

JEDEC Proposed Method for Direct Measurement of Diode Stored Charge, JS-2-65-11
"Measurement of Stored Charge in High Speed Diodes," T. P. Sylvan Application Note #90.30
able on request

259

(avail-

TYPICAL REVERSE
RECOVERY WAVEFORM
FOR A HIGH SPEED DIODE
Figure

1N4150
1N4450

1N4606

If

SU~1

PULSE

TEK 56IA/3S76/3T77
SAMPLING SCOPE OR
EQUIVALENT
?B
?A

60 n SEC
DELAY LINE

RELAY

50 Jl
OUTPUT Z
Vr PULSE

I09

PULSE
GENERATOR

XIOO

IA

PROBE

TEE

TEK 29I
DIODE SWITCHING)
TIME TESTER

i H

<

50 a
INPUT Z

SAMPLING
SCOPE

-T

(Ir)

TEK

TRIGGER
1

HIGH CURRENT REVERSE RECOVERY TEST CIRCUIT

Figure 3

Figure 2

TEKTRONIX
109 OR 110
PULSE
GENERATOR
OR
EQUIVALENT

60

TYPE

n-T

SEC

50 n

-i

_J

COAXI* LTEE
CONNE :tion

-1

ATTENUATOR

son

50

-60n SEC
DELAYED PULSE

'

ATTENUATOR

INPUT PULSE

U
/
i

TRIGGE

OUTPUT PULSE

INDUCTIVE
SIGNAL PROBE

D.UX

10:1

/!
j
1
K-

TEKTRONIX

t rr

ATTENUATOR

SCOPE OR
EQUIVALENT

50

JL
_

50a INPUT

"

TYPE 66I
SAMPLING

flGH

CURRENT REVERSE RECOVERY TEST CIRCUIT

Figure 4

.02

}|
PULSE
GEN

soil

450ft

500il

Wv

-Wv
-

D.V.T.

Figure 5

260

>50fl

SCOPE

1N4150
1N4450

CHARACTERISTICS
T. =?f\T.
1

TYPICAL CORRELATION BETWEEN

STORED CHARGE AND REVERSE

RECOVERY TIME

o
z

O
z

A*

s MEASURED IN B-LINE ELECTRONIC s

_ QS-3 STORED CHARGE METER AT
(Q

"lOrnA,

n MEASURED

JIT 10 iS IN DICA7

ED)

N4I50

\#

IN

TEKTRONIX 291 DIODE TEST FIXTURE

AT CON

1N4606

N4606
N4450

PULSE WIDTH * 300/*SEC

DUTY CYCLE ^2%

^*

N*

>

5"/. '

."

^9

5 "1

/50%

^5%

i*'

.\*

ii

/ Tl

<

//

tt
0.6

STORED CHARGE -Q S -PICO COULOMBS

0.7

FORWARD VOLTAGE

Figure 6

V F (VOLTS)

Figure 7

-3.0

-2.8

TEM PER 4TU RE COEFFICIENT

VtKSUS
F ORW ARD CURRENT
"

-2.6
-2.4

>

-2.2

IN4450
IN4I50

I^ED/il.

^
^lT'

-2.0
-I.8

IN460fi

^ ^^
^
">>

i^

-I.6
-1. 4
-1.

.01

10

IF INm A
Figure 8

HEATSINK
SPACING

STEADY

FROM END
OF DIODE
BODY

THERMAL

STATE
RESISTANCE

C/mW

POWER
DISSIPATION
AT25C

mWf

DHD

DHD

.062"

.250

700

.250"

.319

550

.500"

.380

460

Figure 9
261

100

1N4154 SEE PAGE 205

Silicon

Diodes
1N4151,2,3

1N4454
1N4532,3,4
This family of General Electric silicon signal diodes
are very high speed switching diodes for computer
circuits and general purpose applications. These
diodes incorporate an oxide passivated planar structure. This structure makes possible a diode having
high conductance, fast recovery time, low leakage,

and low capacitance combined with improved uniformity and reliability. These diodes are contained
in two different packages;
double heat sink miniature package and milli-heat
sink package and are electrically the same as their
equivalent types in each of the different packages,
(see page two for groupings of electrically
equivalent types in each of the packages).

PLANAR EPITAXIAL PASSIVATED

with Controlled Conductance
DOUBLE HEATSINK DIODE (DHD)

MIUI-HEATSINK DIODE (MHD)

1N4532-1N4534

53

1N4454

0.090
0.I2Q

0.022
J\0
|

C
.032+002 D!A-

0.055

L_

2002

NOTE' ALL DIMENSIONS

500mW

Dissipation:

Derate:

IN

25C free

air

for temp, above 25C

200C
amb. based on max. T,

Dissipation:

Derate:

1N4151
1

N4454

MHD618
1N4532

Reverse Recovery Time of

4 nanoseconds maximum

Min.-Max. Vf specified at 6
Forward Current Levels
Capacitance of 2 pF

Power

Dissipation to

500

mW

'

500mW

2.85mW/C

DIMENSIONS

IN

25C free air

for temp, above 25C

1N4152
1N4153
1N4533
1N4534

Meets

Dissipation to 250

all

MIL-S-19500

200C

SPACING

STEADY STATE

FROM END
OF DIODE
BODY

THERMAL

mWt

C/mW*

.250"

POWER
DISSIPATION
AT 25C

RESISTANCE

.062"

mW

MHD

Dl

.250

760

.319

550

.330

460

MHD

DHD

.230
.319
.380

*See Figure 5 for thermal resistance for short pulses.

requirements

Figure

HEATSINK

.500"

Power

INCHES

amb. based on max. Tj

maximum

T
NOTE: ALL

INCHES

2.85mW/C

FEATURES

DIA.

CATHODE END-

CATHODE END-

fThis

power

200C.

262

rating

is

based on a maximum junction temperatur

1N4151,

2,

3,

1N4454
(unless otherwise specified)

1N4532,
1N44S4
1N4532

1N4151

MHD618

IN41S2
1N4S33

1N4153
1N4S34

50

30

50

DHD

MHD

Voltage

Reverse

50

MHD

& OHD

Volts

Units

Current

Average

Rectified

mA
mA
mA
mA

150
450
200
2000

Recurrent Peak Forward

Forward Steady State DC
Peak Forward Surge (1 ,u.sec. pulse)
Power

Dissipation

500

Temperature

Operating
Storage

-65 to
-65 to

electrical characteristics:

(25C)

Min.

= 5^A)

(Ib

By

C
C

(unless otherwise specified)

1N4454*
1N4532

Breakdown Voltage

+200
+200

1N4151

1N4152
1N4533

MHD618

Max.

75

Min.

Max.

75

Min.

1N4153
1N4S34
Max.

Min.

40

Max.

75

Volts

Forward Voltage

= 100/uA)
= 250 m A)
(If = 1mA)
(If = 2mA)
(If = 10mA)
(I F = 20mA)
(lF = 50mA)

Vf
Vf
Vf
Vf
Vf
Vf
Vf

(If

(If

0.490
0.530

1.00

0.550
0.590

0.490
0.530

0.550
0.590

0.590

0.670

0.590

0.670

0.620

0.700

0.620

0.700

0.700

0.810

0.700

0.810

0.740

0.880

0.740

0.880

Volts
Volts
Volts
Volts
Volts
Volts
Volts

1.00

Reverse Current

(Vr= 30 V)
(Vh=30V, T a
(V h
(Ve

=
=

Ir

+150C)

50V)
50V,

Ib

100
100

50
50

nsec.

nsec.

Ib

TA

= + 150C)

nA
mA
nA

50
50

Ib

50
50

/j.A

Reverse Recovery Time

(If

Ib

Figs. 9

=
&

10mA, I

1mA,

10)

= 10mA, V = 6V, I = 1mA,

Rl = 100 ohms, Figs. 9 & 10)

(If

Peak Forward Voltagef

Vpeak

3.0

Volts

Capacitance

(Vb

= OV)$

Stored Charge

(If

MIL

Co

pF

Qs

32

32

32

32

PC

(Notel)

10mA)

(See Figures 9 and 10)

type available

0.1 usee, pulse width, 5 to 100 kHz repetitive rate, generator tr = 30 nsec.
JCapacitance as measured on Boonton Model 75A capacitance bridge at a signal level of 50 mV and a frequency of 1 MHz at
Stored Charge as measured on B-Line Electronics Model QS-3 stored charge meter. Pulse amplitude = 5 volts, pulse width
source impedance
10 ohms.

tSOmV peak square wave,

263

Vr = O

volts.

50 nsec, rise time

0.4

nsec.,

IO.0OC

a.ooce.ooc

1N4151,

2,

"

SHADED AREA INDICATES

GUARANTEED LIMITS OF
CONTROLLED CONDUCTANCE
TYPES IN3605, IN3606,

!--25C

1N4454

('

1N4532,

3,

ih4533,irw53>4,IN4i52

AND

-<

lN4i53<

4
TYPICAL FORWARD

VOLTAGE
CHARACTERISTICS
ALL TYPES
:

:.

0.2

0.4

0.6

FORWARD VOLTAGF-Vp

VOLTS

Figure 3

Figure 2

t.2

*
E

MAXIMUM TRANSIENT
THERMAL RESISTANCE
(HEATSINK SPACING 0.250"

UJ

^--TYPICAL

z
5

T"

'
I

22

TYPICAL TEM PEF A ruRE

TYPES)
COEFFICIENT
AL

IN4I5I

IN4I52
IN4I53
IN4454
IN 4532
IN4533
IN4534

-j

z
h-

MHD6I8

<S

<

IO

I0-3

IO" 2

io-'

io

DURATION OF PEAK SQUARE WAVE

FOWARD POWER PULSE-SECONDS

Figure 5

Figure 4

I
00000

_^_ 4

._

"j

i
-l

_TYP CAL
I0000

CHA 3ACTE RIST CS

5C)

f-

t1

000
-IN4 J33

j-

^v
'

00

IN4I53

IN4454
IN4532
IN4534

_
I

IO

zzr~L^-*"""

I
i

REVERSE VOLTAGE

Figure 7

Figure 6

264

Vdc

NOTE

1N4151,

STORED CHARGE

1:

2,

3,

1N4454

When a forward biased diode is subjected to a reverse voltage step a reverse current
will flow for a short time as a result of the stored charge consisting of minority carriers
in the vicinity of the junction. The typical waveform of reverse

1N4532,

current vs time for a

diode subjected to a large reverse voltage is shown in Figure 8. The time required for
the diode to recover its reverse blocking condition will depend on the quantity of charge
stored and the rate at which the charge is removed by recombination inside the
diode
and by current flowing in the external circuit. Conventionally, the speed of a diode is
characterized by the reverse recovery time, t rr measured to some arbitrary current
level as in Figure 8. However, for higher speed diodes reverse recovery time is
not a
satisfactory parameter for characterizing the speed of the diode since it is dependent
on arbitrary circuit conditions and is very dependent on the construction of the test
circuit. Stored charge, on the other hand, is measured by integrating the
reverse current of the diode (as shown by the shaded area in Figure 8), and is consequently much
less dependent on the construction of the test circuit and on arbitrary circuit
conditions.
Stored charge is a more ideal parameter for characterizing the speed of a diode since
it represents an intrinsic characteristic of the diode and can
be measured with good
reproducibility on low cost instruments which have direct meter readout.
Stored charge can be correlated with reverse recovery time measurements on a
specific t rr test jig. Typical correlation curves are shown on the graph below.
,

TYPICAL REVERSE
RECOVERY WAVEFORM
FOR A HIGH SPEED DIODE

References
(1)

(2)

JEDEC Proposed Method for Direct Measurement of Diode Stored Charge, JS-2-65-11
"Measurement of Stored Charge in High Speed Diodes," T. P. Sylvan Application Note #90.30
able on request)

Figure 8

(avail-

TEK 56IA/3S76/3T77
SAMPLING SCOPE OR
EQUIVALENT
PB
?A

60 n SEC
DELAY LINE

X5
XI00

TEK I09
PULSE
GENERATOR

TEK 29I
DIODE SWITCHING
TIME TESTER

PROBE

TEE

Figure 9
I
I

TYPICAL CORRELATION BETWEEN

URED CHARGE AND REVERSE
RiICOVERY TIME

MEASURED

If

10mA,

IN

MEASURED

B-LINE ELECTRONIC s
-3 STORED CHARGE METER AT

(Q s

V**

*-

IN

Ti KTRONIX 291 DIODE TEST FIXTURE

AT CON DIT10 NS IN 0ICA1 ED)

*'

r>

ys
/>

r tf-

\*

'

K*r

\o

LV

30

40

STORED CHARGE

>

l. V

\0<^

50
60
70
Q s - PICO COULOMBS

Figure 10

265

.1<* rv

Silicon

Diodes

1N4156,7

MULTI-PELLET

1N4453
1N4829.30
1N5179

These General Electric high speed multi-pellet diodes are for use in computer circuits and general
purpose applications. They consist of one, two, three, or four planar passivated epitaxial diode
pellets in series, mounted in a subminiature double heatsink package. This structure makes possible stabistors having controlled conductance an d low leakage.
This controlled conductance is necessary for the design of clippers, dc coupling circuits, clamping
circuits, meter protectors, bias regulators, and other types of circuits that require tight tolerances
on voltage levels.
The MPD200, 300, and 400 series may be used as signal limiters or level shifting diodes in transistor logic circuits, and also as dc coupling devices in dc amplifiers and digital circuits like
multivibrators. Other lower cost stabistors are the STB567, 8, 9 devices. See publication 75.46.

maximum

absolute

ratings:

MPD200
MPD300
MPD400

(25C)
MPD300

MPD200

1N4156,7

MPD400

1N4453
1N4829,30
1N5179
Voltage
Reverse

20

30

60

90

400

400

400

400

Power
Dissipation

Volts

mW

(Derate 2.67 mW/C for

ambient temperature
above 25C)

Temperature
Operating
Storage

-65to+175C
-65 to+200C

electrical characteristics:

Type

1N4156
1N4157
IN 4453
1N5179
1N4829
1 N4830

(25C)

(unless otherwise specified)

Maximum

Minimum
Breakdown

Reverse Current

Voltage, Bv

Forward

@ 5^A, Volts

25C

150C

Voltage

nA

MA

Volts

Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9

50
50
50
50
100
100
30
30
30

@
@

30
30

MPD200
MPD300
MPD400

30
30
30
30
100
100
30
60
90

M.
nA

50
50
50
50
25
25

Qst

Maximum

Capacitance*

@ 100C
@ 100C

@ Volts
= 1MHz, pF

20
20
20
20
20
20
30
30

25
20
30
20
25
20
15 (typ.)
10 (typ.)

30

1 (typ.)

1mA
Max.
pC

Min.

PC

50
50
50
50

500
500
500
500

75
75
60

400
400
300

Forward Voltage, Vt Volts

,

If

Table

mA

Min.

Table 2

Max

Min.

Max

Table 3
Min.

Max

Table 4
Min.

Max

Table 5
Min.

Max

Table 6
Min.

Max

Table 9

Table 8

Table 7
Min.

Max

Min.

Max

Min.

Max

0.90-1.00

1.40-1.54

1.82-2.01

0.010

0.74-1.09

1.19-1.54

.430-550

1.40-2.10

0.100

0.97-1.22

1.52-1.77

.510-.630

1.80-2.50

0.84-1.25

1.35-1.80

1.05-1.16

1.62-1.78

2.14-2.36

1.0

1.21-1.41

1.85-2.05

.600-.710

2.20-2.80

0.99-1.44

1.63-2.08

1.22-1.34

1.84-2.03

2.47-2.71

10

1.38-1.58

2.12-2.32

.690-.800

2.60-3.20

1.16-1.61

1.90-2.35

1.39-1.54

2.10-2.33

loot

1.54-1.84

2.36-2.66

.800-.920

3.00-3.70

1.35-1.87

2.15-2.69

1.60-1.76

2.80-3.07
3.16-3.49

2.40-2.65
1

Capacitance as measured on Boonton Electronics model 75A Capacitance Bridge at a signal level of B0 mA rms and a frequency of 1MHz.
width = 50 nsec, rise time
tStored charge as measured on B-Line Electronics model QS-3 Stored Charge Meter. (Pulse amplitude = 5 volts, pulse
10 ohms.) See Notes 2, 3 and Figure 1.
source impedance
2%.
300 nsec, Duty Cycle
tPulsed measurement. Pulse width

266

0.4 nsec,

NOTES:
1N4156, 7
For typical temperature coefficients see Pig. 2.
Stored Charge is measured in the circuit given in MIL- STD-750, 19 January 1962, Method 4061.
In this circuit (See Fig. 4) D 1 should be an ultra fast recovery
diode having a stored charge less
than 5% of that for the diode under test, with breakdown voltage
greater than V
the turn-off
pulse voltage. D 2 should be a high speed planar epitaxial diode
(1N4150) with rapid turn-on
time. The pulse used for measuring stored charge should have V
r equal to
10 volts, a rise time
<0.5 nanosecond, a repetition rate of 100 kHz and a width 'greater than 10 nanoseconds. The
stored
charge is first measured with no current (T in method 4061) and then with If =
l m A (I- in
method 4061). The stored charge specified is the difference between these two readings.
The Tektronix diode recovery time plug-in unit, type S, can be used for
approximate stored
char S e
measurements.
The stored

(1)
(2)

1N4453
1N4829, 30

r ,

(3)

1N5179

MPD200
MPD300
MPD400

charge reading
in the type S
under the
conditions
If
In

SI ORED

CHARG E

VJ FOR WRD C JRREN T,

nt NGE )F VALL ES

'f ?*/

ioo

= 1 mA,
= 2 mA,

_J

-\--/<i

measuring
to Vf =

u,

volts, will o
be up to
g

a factor of
2 lower than"
the stored

;>,

io<

charge
5(

measured
according
to

method

4061, because
of the lower
rate of charge
lc

withdrawal
using the type

I F - FORWARD CURRENT-

S.

Figure

IF -

FORWARD CURRENT mA

Figure 2

VOLTAGE
SOURCE

Rl

CI

-MDUT

<H

Vr

1.0

I.I

1.2

15

1.6

1.7

1.6

1.9

2.0

2.1

2.2

2.3

2.4 2.5

26

2.7

2.9

3.0

3.2

3.1

3.3

3.4

|~

D2

(W)c2^I

--DI

3.5

V F - FORWARD VOLTAGE -VOLTS

Figure 3
iee

754

Figure 4
j IOOO~
I

MIN.
I

Q-:

IN 4453

1N4830
1N4157
MPD300

I.

CATHODE

BAND

L_ 1 075 D|A

060

.022
.018

3.

ALL DIMENSIONS ARE IN INCHES AND ARE REFERENCE

UNLESS TOLERANCED.

8O0Y CONTOUR

IS OPTIONAL WITHIN THE DIMENSIONS

IF ANY, ARE INCLUDED WITHIN THIS
CYLINDER AND ARE NOT SUBJECT TO THE
MINIMUM BODY DIAMETER.

GIVEN. SLUGS,

N4829
1N4156
1

MPD200

TN5I79

E3H

4.

MPD400
7
CATHODE

CATHODE

BAND

BAND

267

L_ ,075 D|A

060

^022
.018

NOMINAL LEAD LENGTH

IS

I.ZBO.

TYPICAL APPLICATIONS
1N4156, 7

See

1N4453

(Also

1N4829, 30

Level-shifting in

Multi-pellet

DTL

Diode Application Notes 90.60 and 90.61)

Circuits

+ I2V

1ISI5179

MPD200
MPD300
MPD400

A B C D E
A

2N708

Figure 5
supply is
gate in Fig. 5, the MPD300 multi-pellet diode provides for level-shifting so that only one power
high stored charge and the subsequent long recovery time, the MPD300 speeds up the transistor turn-off
the transistor.
time by providing it with a reverse base current large enough to draw the stored charge out of the base of
transistor, like
Turn-off time is reduced by a factor of 2 to 3 compared to the use of 3 ordinary diodes in series. When a faster
transistor, like the
the 2N2368 is used, similar improvement in performance is achieved. For a slow non-gold-doped type
base to
2N3973 similar improvement is also obtained provided that a resistor in the vicinity of 1.5K is connected from the
attainable
ground. In multi-level logic application, a propagation delay time of about 10 nsecs and with a fan-out of 1 to 5 is

For the
required.

NAND
Due

when 2N708
Split

to its

or

2N2368 transistors are

used.

Power Supply and Voltage Regulator

for Transistor Circuits

o-A/W

+ I2V

2N34I5

fy

Rl
5 mA

RS v

2N34I5

l
L

Figure 6

%%

and has
)
The very simple voltage regulator in Fig. 6a provides good regulation against change in voltage source (about
a low output impedance equal to dynamic impedance of the multi-pellet diode, which is approximately 5 ohms for this circuit.
Efficiency is high compared to a resistive voltage divider regulator for the same output impedance. The latter regulator also
gives no regulation against change in voltage source. In Fig. 6b, better regulation against change in voltage source is acquired
by the use of a double diode shunt type configuration. Output impedance is the same as in Fig. 6a. Efficiency is lowered somewhat but a much better regulation against change in voltage source is achieved (about 0.07%).
In Fig. 6c and d an emitter follower is added to the output. Output impedance is a little higher than the 2 preceding circuits,
but higher efficiency and higher regulation against change in voltage source are obtained.

268

DC Coupling

1N4156, 7
for Multivibrators

Temperature Compensated Constant

1N4453

Current Source

1N4829, 30

1N5179

MPD200
MPD300
MPD400
"BB

6V
Figure 7

The use

of MPD300's in this astable multivibrator (Fig. 7)

provides dc level-shifting to give the desired output voltage
swing. Only one capacitor is required. Stable operation is
achieved from a few cycles per second to about 10MHz.
This circuit operates out of saturation region and switching transistors are not required. A risetime of about 5
nsecs is obtainable when high frequency transistors like
the 2N3663's are used. Typical 2N3859's and 2N3901's will
give risetimes of 10 and 20 nsecs respectively.

Biasing

and Current

Figure 8
In Fig. 8 the 2-pellet diode is used to compensate for the
variation of Vbe due to temperature changes. Output resistance is approximately h b the collector output impedance of the transistor.
,

Limiting for Push-pull Amplifiers

The power amplifier in Fig. 9 is based upon a complementary push-pull operation driven by a class A driver amplifier. Ac and dc feedback is provided through R
A MPD200
3
not only biases the quiescent operating point so that crossover distortion is eliminated but also provides temperature
compensation. The other 2 MPD200's limit the emitter current and hence protect the output transistors.
.

Figure 9

Signal Limiting

Using the multi-pellet diodes there is a variety of signal

limiting at various thresholds (Fig. 10).

PFigure 10

DC Coupling

for Transistor Amplifiers

Figure

Current Limiting

Figure 12

Very simple amplifiers as shown

in Fig. 11 can be built

using MPD's to provide low ac impedance voltage bias.
When feedback is appropriately applied, temperature stability can be obtained. Simplicity, compactness and good

The emitter current

limited by the 2-peliet MPD200,

thereby the transistor is protected (Fig. 12). The maximum emitter current is (Vd Vbe) /Re which is independent of load, base drive and power supply. Using this configuration, current limiting can be applied to switching
circuits, amplifiers, voltage and current regulators.

low frequency response are the main advantages of this

type of circuit.

269

is

SEE PAGE 229

1IM4305

Passivated

IN4245
Rectifier
IN4246
TRANSIENT VOLTAGE PROTECTED
2.5

IN4247

200-1000 Volts

Amps

IN4248
IN4249

THE GENERAL ELECTRIC 1N4245-49 SERIES ARE A14 TYPES, 2.5 AMPERE
RATED AXIAL-LEADED, GENERAL PURPOSE RECTIFIERS. DUAL HEATSINKCONSTRUCTION PROVIDES RIGID MECHANICAL SUPPORT FOR THE
PELLET AND EXCELLENT THERMAL CHARACTERISTICS. PASSIVATION
AND PROTECTION OF THE SILICON PELLETS PN JUNCTION ARE PROVIDED BY SOLID GLASS; NO ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLY-SEALED PACKAGE.
The 1N4245-49
will dissipate up

series (Al4's) are

"Transient-Voltage Protected." These devices

000 watts in the reverse direction without damage. Voltage

generated by household or industrial power lines are dissipated.

transients

absolute

to

maximum

ratings:

(25c unless otherwise specified)

1

Reverse Voltage (-65 to +160C, Tj)

Working Peak, V KWM

55C ambient
25C

200
200

DC,V R
Average Forward Current,

N4245

1N4247 1N4248

N4246

600
600

400
400

1.0

(see rating curves)

2.5

800
800

N4249
1000
1000

Volts
Volts

Amp
Amp

*Peak Surge Forward Current, I FSM

Non-repetitive, .0083 sec
Half sine wave
Full load JEDEC method
Peak Surge Forward Current,

25

Amps

90

Amps
Amps

I FSM

Non-repetitive, .001 sec

Half sine wave

Full load 160 C,Tj

No Load (25CCase)

-100

-65Cto+160C
-65Cto+200C

Operating Temperature Range, Tj

Storage Temperature Range, T gTG

* Junction

Pt,

RMS for fusing, .001 to .01 sec.

4.0

Peak Non-Repetitive Reverse

" 1000
*
Power Rating, P RM
(20 /xsec. half sine wave, at Max. Tj)
i/ "
Mounting Any position. Lead temperature 290 C maximum to 8
from body for 5 seconds maximum during mounting.

Amps 2
Watts

electrical characteristics:

(25c unless otherwise specified)

Maximum Forward Voltage Drop, V FM

I P = 1.0A, T A = +55C
* Maximum Reverse Current, I RM
*

at rated

Tj
T,

1.2

1.0

<

2.5

/j.sec

5.0

;u,sec

VR

= +25C
= +125C

Typical Reverse Recovery Time, t rr

Maximum Reverse Recovery Time, t rr
(Recovery Circuit Per MIL-S-19500/286B)

*JEDEC

Volts

25

Registered data.

270

fj.A

sec.

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

SINGLE PHASE
600

VOLTS & BELOW

AI4 SINGLE

PHASE HALF
WAVE RESISTIVE LOAD
TOTAL THERMAL RESISTANCE
9j. A =60 "C/W
HEAVY TIE LUGS OR
LARGE COPPER AREA
PC BOARDS.

2.0

A.
Ss.

(E

S.

6j. A 'TO"

C/W

TYPICAL THERMAL LUG

MOUNTING.

1.

C"^

<

C.

u2

<r

9j. A =80 C/W

TYPICAL PC BOARD

MOUNTING SMALL COPPER

UJ

>

AREA.

<

0.4

7^
3

53

9D

50

70

AMBIENT TEMPERATURE-

LEAD TEMPERATURE

AMBIENT OPERATION

TIE POINT

(See Typical Mounting Below)

TL

-C

OPERATION

TYPICAL CHARACTERISTICS
40A

"V.

"^V^

FOF

WARD VOLTAGE

t-

Ul

F )L

3
o

N0 LOAO 25*C

MAX. 75-C-x/
1

TYP. 17 5^cv)y

jOA

II
in

***

Id

Z
z

V-TYl 1CAL

////

g
z

//Si MAX.
'

MPERAT URE

Tl

COEFI"KIENT
nrp. 25'

2!

C \

CYCLES AT 60 CYCLES PER SECOND

MAXIMUM NON-REPETITIVE MULTICYCLE

FORWARD SURGE CURRENT

1\

II
2

INSTANTANEOUS FORWARD VOLTAGE -VOLTS.

FORWARD TEMPERATURE COEFFICIENT-mv/'C

FORWARD CHARACTERISTICS

id
TYPICAL TIE LUG MOUNTS

TYPICAL PC BOARD MOUNTING

i.o"

.180

MAX.

(4.572 Mm.)

i.o"

S&^vJ^
r^r
"^ PERF

MAX.
U.BIOMm.)

.150

BOARD

O^:

~~

OUTLINE

DRAWING
GLASS EPOXY
PC BOARD

.056

050*MAX.

f"

(l.270Mm.)

I
.

1.0 MIN.

(25.400Mm.)

fc

.035 MAX
(.889 Mm.)

AFTER
TINNING

DIA.

ALL DIMENSIONS ARE IN INCHES

AND (METRIC)
*WELDAND SOLDER FLASH NOT
CONTROLLED IN THIS AREA
271

1N4450 SEE PAGE 258

1N4446-49 SEE

Silicon

PAGE 205

Diode

Electric 1N4444 Double Heatsink Diode is a low capacitance diode for low and
high current high speed switching circuits and general purpose applications. The diode incorporates an oxide passivated planar structure built on a high resistivity, epitaxial layer grown on
a low resistivity silicon substrate. The 1N4444 offers controlled conductance, minimum and
maximum forward voltages at four levels of forward current. This closely controlled conductance is necessary for the design of clamping and logic circuits where tight tolerances on vol-

The General

tage levels are required.

Double Heatsink Diodes receive a one hour glass anneal bake at 425C. This processing
hermetic integrity under temperature cycling and thermal shock conditions exoptimizes
ceeding MIL-S-19500C requirements. All DHD's then receive a 300C stabilization bake for
168 hours to assure paramenter stability and reliability under maximum storage and operating
junction temperature.
All

DHD

maximum

absolute

ratings:
IN 4444

Voltage

volts

50

Reverse
Current

Average

ma
ma
ma

200
600
250

Rectified

Recurrent Peak Forward

Forward Steady-State DC
Peak Forward Surge (1 ^sec)

021
.019

amps

Power

CATHODE END

Temperature
<

Operating
Storage
Lead,

Vis"

<

V&2" from case for 10 sec.

electrical characteristics:

(25C)

65 to +20065 to +200300

c
c
c

(unless otherwise specified)

1N4444
Forward Voltage
(I P = 0.1 ma)
(If = 1.0 ma)
(I F = 10 ma)
(If = 100 ma)

Min.

Vf
Vf
Vf
Vf

440
560
690
850

By
By

70

Max.
550
680

820
1000

Breakdown Voltage
(Ib
(I*

= 5 11a)
= 100>a)

Reverse Current
(V, = 50 V)
(V = 50 V, Ta
(Vb = 80 V)
(VB = 80V,T i

50
50

Ib
Ib
Ib
Ib

= +150C)
= -|-150 C)
o

Capacitance

(V K

= 0V)

(Notel)

Co

Reverse Recovery Time

(If

= Ib =

10 ma, Recover to 1

ma)

(Fig. 1)

note:
Capacitance as measured on Boonton Model 75 A capacitance bridge at a signal
mv and a frequency of 1 mc.

level of 50

272

.075
.060

_L

.032 .002 DIA.

500

Dissipation

(1)

3fZ

ALL DIMENSIONS
IN INCHES

"I

.02

(\

\(

^i
P|

PLANAR
<IOK
"

DIODE

'

UNDER
TEST

''o.i

IV.

o
o
I

"=

DISC.

Ol

^2.5K

1N4444

UJ
1

0-30 VDC o + ADJUST I = IOMA)

F

f-

2
m

TEKTRONIX
TYPE 10 OR
PULSE
GENERATOR

_l

Z
I
o
O

TEKTRONIX
TYPE N
SAMPLING PLUG

III

UNIT

IN

RISE TIME

RISE TIME

TRIGGER

<. 5NS

LOW CURRENT

< 6NS

TEST CIRCUIT

rr

FIGURE

PULSE

i-n

h.

DELAY

X
50 Ji
OUTPUT

V PULSE
(I

R)

~rTRIGGER

HIGH CURRENT TEST CIRCUIT

FIGURE 2

a.o
i

TEMPERATURE COEFFICI =:nt

VS
FORWARD CURRENT
IN4444, IN4445

^T

***/

V^
I

in

IF

in

ma

FIGURE 3

273

SEE PAGE 266

1IM4453

1N4454 SEE PAGE 262

Silicon

Diodes
1N4451

1N4607.8

This family of General Electric Double Heatsink Diodes are high conductance,
high speed switching units for logic, core and hammer driver circuits, and general
purpose applications. These diodes incorporate an oxide passivated planar structure
built in a high resistivity, epitaxial layer grown on a low resistivity silicon substrate.

The 1N4451, 1N4607, and 1N4608 feature controlled conductance with minimum
and maximum forward voltages at four levels of forward current. This closely controlled conductance is necessary for the design of clamping and logic circuits where
tight tolerances on voltage levels are required.

maximum

absolute

ratings:

(25C)
0.140

1N4607

1N4451

1N4608

0.180

0.022
O.OI8

Voltage

30

Reverse

Volts

70

70

Current

=r$
.032.002 OIA.-

Average

Rectified

Recurrent Peak Forward

Forward Steady-State DC
Peak Forward Surge (1 /usee,

mA
mA
mA

200
600

250

0.075
0.060
I

CATHODE END-

NOTE: ALL DIMENSIONS IN INCHES

Amps

pulse)

Power
Dissipation*

mW

500-

Temperature

65
65

Operating
Storage
Derate 2.85

mW/C

for ambient temperatures above 25C based on a

to

to

+200
+200

maximum

C
c

junction temperature of 200C.

t
electrical characteristics:

(25C)

(unless otherwise specified)

1N4451

= 100/lA)
(If = 1mA)
(If = 10mA)
(If = 100mA) t
(If = 250mA) f
(If = 300mA) t
(If = 350mA) t
(If = 400mA )f
(If = 450mA) f
(If = 500mA) f
(If

1N4608

N4607

Min.

Max.

Min.

Max.

Min.

Max.

Vf
Vf
Vf
Vf
Vf
Vf
Vf
Vf
Vf
Vf

400
510
620
750

500
610
720
875

390
500
610
740
810

500
610
720
870
950

390
500
610
740
810

490
600
710
850
930

1000
1100

840

960

Bv
By

40

Forward Voltage

1000

1000
1100

mV
mV
mV
mV
mV
mV
mV
mV
mV
mV

Breakdown Voltage
(Ie
(Ik

= 5 M A)
= 100MA)

85

274

85

Volts
Volts

1N4451
1N4607, 8

electrical characteristics:

(25C)

(unless otherwise specified)

1N4451

Max.

Min.

N4607

Max.

Min.

N4608
Max.

Min.

Reverse Current

(V E
(V B
(V r
(V

(V K

= 30V)
= 30V,T A =
= 50V)
= 50V, Ta =
= 70V)

nA

50
50

Ir

150C)

Ir

//.A

Ir

100C)

100
25
250

Ir
Ir

nA

100
25
250

tiA

nA

Capacitance

= OV)J

(V E

pF

Reverse Recovery Time

(If

to
(If

to

Ir

Ir

10mA, Recover
Fig. 3)

50mA,

Stored Charge

(If

1mA,

10

10

10

15

15

64

64

500mA, Recover
Fig. 4)

t,r

(Note 1)

10mA)

64

Qs

pC

tPulsed measurement. Pulse width

300 fisec. Duty Cycle
2%.
t Capacitance as measured on Boonton Model 75A capacitance bridge at a signal level of 50
and a frequency of 1 MHz.
Stored Charge as measured on B-Line Electronics Model QS-3 stored charge meter. Pulse amplitude
5 volts, pulse width
nsec, source impedance
10 ohms.

mV

NOTE

1:

5 nsec, rise

time

STORED CHARGE

When

a forward biased diode is subjected to a reverse voltage step a reverse current

will flow for a short time as a result of the stored charge consisting of minority carriers
in the vicinity of the junction. The typical waveform of reverse current vs time for a
diode subjected to a large reverse voltage is shown in Figure 1. The time required for
the diode to recover its reverse blocking condition will depend on the quantity of charge
stored and the rate at which the charge is removed by recombination inside the diode
and by current flowing in the external circuit. Conventionally, the speed of a diode is
characterized by the reverse recovery time, t, r measured to some arbitrary current
level as in Figure 1. However, for higher speed diodes reverse recovery time is not a
satisfactory parameter for characterizing the speed of the diode since it is dependent
on arbitrary circuit conditions and is very dependent on the construction of the test
circuit. Stored charge, on the other hand, is measured by integrating the reverse current of the diode (as shown by the shaded area in Figure 1), and is consequently much
less dependent on the construction of the test circuit and on arbitrary circuit conditions.
Stored charge is a more ideal parameter for characterizing the speed of a diode since
it represents an intrinsic characteristic of the diode and can be measured with
good
reproducibility on low cost instruments which have direct meter readout.
Stored charge can be correlated with reverse recovery time measurements on a
specific t test jig. Typical correlation curves are shown on the graph below.
,

References
(1)
(2)

JEDEC

Proposed Method for Direct Measurement of Diode Stored Charge, JS-2-65-11

"Measurement of Stored Charge in High Speed Diodes," T. P. Sylvan Application Note #90.30
(available on request)

TYPICAL REVERSE
RECOVERY WAVEFORM
FOR A HIGH SPEED DIODE
FIGURE

275

<!0
i

1N4607,8

"

1N4451

TYPICAL CORRELATION BETWE EN STO RED

CHARGEAND REVERSE RECOVER r TIME

MEASURED IN B-LINE ELEC TRONICS

QS-3 STORED CHARGE METER AT

(Q s
lb

TEKTRONIX 29I DIODE TEST FIXTURE

AT CONDITIONS INDICATED)

_/\<,

/.#'

/&
~7&
8

80
70
10mA -PICO COULOMBS

60

50

STORED CHARGE - Q s

FIGURE 2

TEK 56IA/3S76/3T77
SAMPLING SCOPE OR
EQUIVALENT
9 B
?A

60 n SEC
DELAY LINE

X5

TEK I09
PULSE
GENERATOR

XIOO
TEK 29I
PROBE DIODE SWITCHING
TIME TESTER
TEE

\A

LOW CURRENT REVERSE RECOVERY TEST CIRCUIT

FIGURE 3

DELAY LINE

TEKTRONIX
TYPE I09 OR MO
PULSE
GENERATOR
OR
EQUIVALENT

INPUT PULSE

50fl

r1
1

COAXIAL TEE
CONNECTION

LJ

ATTENUATOR

ATTENUATOR

SOfi

son
OUTPUT PULSE

'

TRIGGER

inductive

W
hi

signal probe
TEKTRONIX
TYPE 661
SAMPLING
SCOPE OR

X
*

io:i

D.U.T.

s
*

ATTENUATOR
/

60 n SEC
DELAYED PULSE

50X1

EQUIV ALE.NI
50A INPUT

HIGH CURRENT REVERSE RECOVERY TEST CIRCUIT

FIGURE 4
276

Ir

TEMPERATURE COEFFICIENT

-2.6

1N4607, 8

FORWARD CURRENT

-2.4

4607
IN4608
IN

>-??

4?

z -2.0

s^

^ <f%

o
i

1N4451

Tl

-28

1.8

"%W

-1.4
-1.2

.01

FIGURE 5

HEATSINK
SPACING

STEADY

FROM END
OF DIODE
BODY

THERMAL

STATE

POWER
DISSIPATION
AT 25C

RESISTANCE

C/mW

mWt

DHD

DHD

.062"

.250

700

.250"

.319

550

.500"

.380

460

FIGURE 6
t

This power rating

is

based on a

maximum

junction temperature of 200C.

lOOOr

^
^^*"

FORWARD VOLTAG E

'

CrHARACT ERISTICS

T A '2 5C
IN44

51

IN 46.07

IN4i

/ /

5% Am /

PULSED F OR I r 2 5
PULSE WIDTH* 300 mSEC
DUTY CYCLE 2%

/4s%

//

zz

0.5

0.6

0.7

0.8

0.9

FORWARD VOLTAGE - V F (VOLTS)

FIGURE 7
277

Silicon

1N4510-11

~|

Rectifier

CONTROLLED AVALANCHE

RECTIFIERS

FROM GENERAL

ELECTRIC

Diode Applications:
Self -protection against normal voltage transients. Dissipates up to 3900 watts
peak power in the reverse direction. Permits decreased PRV safety factors in
equipment due to greatly reduced transient voltage vulnerability.
Unmatched standards of reliability at PRV's up to 1200 volts, as well as at
Feature These Advances

in Silicon

Rectifier

lower voltages.
Protection of other circuit components against oyervoltage through rigidly
specified maximum/minimum avalanche characteristics.
Make ideal voltage equalizing elements for series connected SCR's and conventional rectifier diodes. Also for anode triggering SCR's to prevent damage from
voltage transients in the forward direction.
Simplified series operation of rectifiers in high-voltage applications ... no shunting resistors necessary for Controlled Avalanche Rectifiers. Makes possible compact high-voltage assemblies.
unharmed by
Can operate in the avalanche breakdown region at high voltages
.

hi-pot

and megger

tests.

To be designated "Controlled Avalanche" a GE silicon rectifier diode must

1. Have rigidly specified maximum and minimum avalanche voltage characteristics
maximum
2. Be able to operate in its avalanche region without damage at any junction temperature up to a
of 175C;and
defining this capa3. Be able to absorb momentary power surges in the avalanche region, and have ratings
175C.
and
of
25C
junction
temperatures
bility at starting
Avalanche Silicon
For information on the application of Controlled Avalanche Rectifiers, see Publication No. 200.27, "An Introduction To The Controlled
River Road, Schenectady, New York lidUb.
Rectifier". Copies may be obtained from: General Electric Company, Distribution Services, Bld B 6, Room 208, 1
.

MAXIMUM ALLOWABLE RATINGS

& Working

Repetitive

MINIMUM

Peak Reverse Voltage*

Type
Tj

Avalanche Breakdown

Voltage, BV, (5

VuM(wkg)
65C to +175C

V,iM<rep),

current at

T.r

mA

MAXIMUM

Avalanche Breakdown

Voltage, BV, (5

test

current at Tj

25C)

mA

test

Full-Load Reverse Current

135C

(full-cycle avg.,

25C)

<p),

Tc,

Ir(av)

(Note: 1)

Volts**

1N4510.R
1M4511.R

1000
1200

Volts

Volts

1250
1500

1550
1930

Milliamperes**

1.75
1.5

Average Forward Current, I (T. = +135C, single phase)

Peak Once-Cycle Surge Current (non-repetitive), I FM (surge)
Minimum Pt Rating (see Curve 6)
Reverse Power Surge (non-repetitive, 10 //.sec, square wave)
Tj
T.T

= +25C
= +175C

._

1.5

(For other conditions, see Curve 2)

Average DC Reverse Power in Breakdown Region ( 65C TV +135C
Peak Reverse Power in Breakdown Region (repetitive) (Note: 2)
Forward Peak Voltage Drop,
(TV = +135C, I = 12 ampere avg.)

12 Lb-in (Min), 15 Lb-in (Max)

14

voltages apply with a heatsink thermal resistance of 10C/watt

Indicates values included in JEDEC Type Number Registration.
(1)

VRMfrep) applies fur a conventional AC

power generation is taken

tional reverse
(2)

r>r

less,

at

maximum

Kg-cm (Min),

17.5

Kg-cm (Max)

rated junction temperature.

that the adeliDC conversion application. Vu\i(rep) and Vi<\i<wkg) e an be considered unlimited providing
similar to voltage
into account by allowing for its influence on the forwar d current rating. Consideration-*

to

regulator diode applications would apply.

average power dissipation, reduce case temperaThese ratings assume no forward power dissipation. In applications requiring both forward and rev erse
2.0" C for every watt of average reverse powt-r
ture as determined from the maximum case temperature versus average forward current curve by
dissipation.

(3)

2.0C/Watt

-65Cto +175C**
-65C to +200C**

T.T

Maximum

Kilowatts
10 Watts**
50 Watts
1.4 Volts**

(Note: 2)

#.T .

Operating Junction Temperature,

Storage Temperature, T, K
Stud Torque

Amperes**

3.9 Kilowatts

-..

Thermal Resistance,

12

240 Amperes**
67 Ampere 2 seconds

Case temperature, Tc,

is

measured

at the center of

any one of the hex

flats.

278

1N4510-11

^\

4000

INITIAL

j25' C

1000

o-

700

^^._V

**^t
TIAL Tj ITS'?"

500
>

**^^

INN
OVERLOAD MAY BE REPEATED

K!

HAS AGAIN BEEN ESTABLISHED

100,

60 80 00

200

OOO

500

2000

5000

10.000

SQUARE WAVE PULSE DURATION- MICROSECONDS

1.

NON-RECURRENT REVERSE SURGE

CURRENT RATINGS

2.

^ ^s

175

"i

tt

~>

NON-RECURRENT REVERSE POWER SURGE

_l CURVES SHOW MAX AND MIN AVALANCHE BREAKDOWN VOLTAGES FOR ALL V
RM
Z BREAKDOWN VOLTAGE INCREASES APPRO*. 0.1% /'C
WITH INCREASING Tj

n
(wka)

GRADES

r
(T T = 25-C)

sT

'-!t5Sft

100,

400

600

BOO

1000

1200

1400

1600

1800

50\

'x. DC

2000

20

INSTANTANEOUS REVERSE VOLTAGE - VOLTS

22

24

AVERAGE FORWARD CURRENT-AMPERES

3.

REVERSE CHARACTERISTICS

4.

MAXIMUM CASE TEMPERATURE

AVERAGE FORWARD CURRENT

250

si
u

2O0

100

VS.

'

150

100

3 so
o
K
50

i o

FOBS JB-CYCLE SUf 6E

OURAT ION (LESS TH/ N
ICYCL E) USE CURVE 3

* 20

CYCLES AT 60 Hz

MAXIMUM FORWARD SURGE CURRENT

FOLLOWING RATED LOAD CONDITIONS

5.

PULSE TIME (m SEC)

SUBCYCLE SURGE FORWARD CURRENT AND 2t

RATING FOLLOWING RATED LOAD CONDITIONS

6.

279

1N4510-11
30

===!S!e!

s*

DC

,/
'

//

I
I

//

iii|tiiiiij

1"
Xi'irsKJ

I*

//

Tj-m*c

1"

^ //
^

I"

::p=:::~:
ll

AVERAGE FORWARD CURRENT- AMPERES

instmttaneous forward vw.tmc-vcx.ti

7.

MAXIMUM FORWARD

8. FORWARD POWER AS A FUNCTION OF

+175C)
AVERAGE FORWARD CURRENT (Tj

CHARACTERISTICS

""

x-

'

Ul

'

*
<

i
z

II

1!

NOTE
CURVE DEFINES TEMPERATURE RISE OF JUNCTION ABOVE
HEAT SINK FOR SINGLE LOAD PULSE OF DURATION t.
PEAK ALLOWABLE DISSIPATION IN RECTIFIER FOR TIME
t, IF STARTING FROM HEAT SINK TEMPERATURE. EQUALS

'

'

10

BY T H

DIVIC ED

TRANSIEN r t HEF M A
PPEAK * 17 5'C -T HE AT

IMF EDANC E.
SINK

0.5

OOOl

002

0.005

O.Oi

002

0.05

0.5

2
t

9.

10

50

2.0

50

20

10

100

-SECONOS

MAXIMUM TRANSIENT THERMAL

IMPEDANCEJUNCTION TO HEATSINK
l

<

10

30

3*

3*

^ \V

6*

FORCED CONVECTION COOLING

\
_J>&~
1000 FT/MIN

s \

**

5*

^ J*

FOF CED CONVECTION COOLING

(000 FT/MIN

FREE CONVECTION
COOLING

NOTES: L

FM

EMI3SIVITY >

Z.

MIN

RN

S >v

90%

SPACING-OS INCHES

"40

10.

50

MM

GO

NOTES:

CENTER OF FIN
4. FIN MOUNTED VERTICALLY OR
PARALLEL TO AIR STREAM

130

140

ISO

160

FIN EMISSIVtTY I

90%

RECTIFCR MOUNTED AT
CENTER OF FIN
4 FIN MOUNTED VERTICALLY OR
PARALLEL TO AIR STREAM
3,

70 80 90 IOO IK) 120

AMBIENT TEMPERATURE -*C

--<

FREE CONVECT
COOLING

170

ISO

10

CURRENT RATING FOR DEVICE MOUNTED

ON A 5" x 5" x 0.050" COPPER FIN

11.

MM!

20

40

50

GO

^ ^.

\
A
V
^v
^^
s ^\
V

70 80
SO IOO 110 120 130 140 ISO
AMBIENT TEMPERATURE -*C

160

170

ISO

CURRENT RATING FOR DEVICE MOUNTED

x 0.043" COPPER FIN
x

ON A
280

90

2W 2W

OUTLINE DRAWING
INCHES

MILLIMETERS

SYMBOL
MAX.

MIN.

.405
.424
.437
.175
.800
.250
.453

<pD

.424

.075

m
N

.422
.060

10.77

10.29
10.77
11.10

1.91

4.45

'

.1

6.35
11.51

10.72

10-32 STEEL NUT

0,v

CADMIUM PLATED

.078^

LOCKWASHER,

1.52
2

THICK, TIN PLATED

WASHER..035 THICK
NICKEL PLATED

BRASS

WASHERS. TWO,
MICA .204
ID, 005 THICK

.625

Angular orientation of this terminal is undefined.

10-32 UNF-2A. Maximum pitch diameter of plated threads
shall be basic pitch diameter (.1697", 4.29 MM). Ref: (Screw
thread standardsfor Federal Services 1957) Handbook H28. PI

O.D.,

TEFLON

True Controlled Avalanche

.204 1.0,050 THICK

HOW

SUPERIOR CONTROLLED

ARE COMPARED TO OTHER

Rectifiers Will

Not Be Damaged In Any

STEADY-STATE
This test operates the rectifier in its high voltage avalanche region at a continuous power
dissipation level of approximately 5 watts, at
avalanche voltages over 800 volts. This is a
test for surface stability at high voltage.

RECTIFIERS:

Way By These Tests.

REVERSE IMPULSE
This tests the ability of the rectifier to withstand high transient voltages and to dissipate
high levels of peak power in the reverse direc-

Peak reverse power for

tion.

10 KV RECTIFIER
(G-E 4JA42IEH20ABI

10

S-4T TRANSFORMER

is

NEEDLE SPARK GAP.

ADJUST FOR SPARKOVER
AT 5000 VOLTS

MEGOHMS

TEST RECTIFIERS
SHOULD BE
MOUNTED TO HEATSINK
TO PREVENT THERMAL
RUNAWAY. CASE TO
AMBIENT THERMAL
RESISTANCE SHOULD
NOT EXCEED 28*C/W

with
over 250

rectifiers

avalanche voltages above 800 volts

watts in this circuit.

ADJUST FOR
3KV PEAK VOLTAGE
ON TRANSFORMER
SECONDARY

UTC

WASHER..270 OD.

AVAILABLE UPON REQUEST

TRY THESE SIMPLE TESTS TO PROVE

RECTIFIERS

O80 R

COPPER TERMINAL, .016

STEEL

COMPLIES WITH
EIA REGISTERED OUTLINE DO-

AVALANCHE

DIA.

CADMIUM PLATED

NOTES:
1.

D1A-

20.32

2.

10-32
UNF-2A

MAX.

MIN.

INSULATING HARDWARE
KIT*

REVERSE POLARITY
FOWARD POLARITY

NOTES

0t

1N4510-11
DIRECTION OF FOWAR0 CURRENT FLOW:

R OHMS, 2 WATT
CURRENT LIMITING

' RESISTOR.
ii7

o VOLTAGE PROBE

vac:

;^0l|lf<l
10

KV

OR EQUAL. 117 VOLT PRI.,

3KV SEC, 30 MA. MIN.

TEST RECTIFIER

o CURRENT PROBE

UTC S-49 TRANSFORMER

OR EQUAL. 117 VOLT PRI,
4KV SECONDARY,

'"

"

MA MIN.
(DO NOT GROUND TRANSFORMER CASE)
10

Test

The impulse voltage

Test

Rectifier

R Ohms

Rectifier

1N4510
1N4511

100K
100K

1N4510
1N4511

Ohms

and current

12K
12K

rectifier can be viewed

by connecting a scope
between the indicated
voltage and current
taps and ground.

in the test

FACTORY CONTROL TESTS

General Electric Controlled Avalanche Rectifiers are subjected to rigorous tests to assure capability to the
above conditions. In addition, production units undergo tests to control

Minimum/maximum avalanche

voltage

5 temperature cycles (-65C to +175C)

Elevated temperature reverse current

240 ampere forward surge current capability

Package leaks (helium leak test)

Forward voltage drop

Internal thermal resistance

Reverse power surge

281

CONTROLLED AVALANCHE

1N4529-30

Silicon Rectifier

SEE PAGE 205

1N4531

1N4532-34 SEE PAGE 262

35A Avg.

CONTROLLED AVALANCHE

RECTIFIERS

Up to 1200V

FROM GENERAL

SEE PAGE 205

1N4536

ELECTRIC

Diode Applications:
Self -protection against normal voltage transients. Dissipates up to 12,000 watts
peak power in the reverse direction. Permits decreased PRV safety factors in
equipment due to greatly reduced transient voltage vulnerability.
Unmatched standards of reliability at PRV's up to 1200 volts, as well as at

Feature These Advances

in Silicon

Rectifier

lower voltages.
Protection of other circuit components against overvoltage through rigidly
specified maximum/minimum avalanche characteristics.
Make ideal voltage equalizing elements for series connected SCR's and conventional rectifier diodes. Also for anode triggering SCR's to prevent damage from
voltage transients in the forward direction.
Simplified series operation of rectifiers in high-voltage applications ... no shunting resistors necessary for Controlled Avalanche Rectifiers. Makes possible compact high-voltage assemblies.
Can operate in the avalanche breakdown region at high voltages
unharmed by
.

hi-pot

and megger

tests.

To be designated "Controlled Avalanche" a GE silicon rectifier diode must

1. Have rigidly specified maximum and minimum avalanche voltage characteristics
2. Be able to operate in its avalanche region without damage at any junction temperature up to a maximum
of 175 C and
3. Be able to absorb momentary power surges in the avalanche region, and have ratings defining this capability at starting junction temperatures of 25C and 175C.
;

For information on the application of Controlled Avalanche Rectifiers, see Publication No. 200.27, "An Introduction To The Controlled Avalanche Silicon
Rectifier". Copies may be obtained from: General Electric Company, Distribution Services, Bldg. 6, Room 208, 1 River Road, Schenectady, New York 12305.

MAXIMUM ALLOWABLE RATINGS

Repetitive

& Working

MINIMUM

Peak Reverse Voltage*

Type

Viui(rep),
Tj

Vuu(wkg)

= 65C to

Avalanche Breakdown

Voltage, BVn, (5

+175C

current at

T.i

mA

MAXIMUM

Avalanche Breakdown

Voltage, BVn, (5

test

25C)

current at Tj

mA test

Full-Load Reverse Current

(full-cycle avg.,

= 25C)

<t>),

<>

115 C Tc,

Ir(av)

(Note: 1)

1N4529.R
1N4530.R

Volts**

Volts

Volts

Mitliamperes**

1000
1200

1250
1500

1550
1930

2.5
2.0

35 Amperes**
Average Forward Current, I (T = +115C, single phase)
500 Amperes**
Peak One-Cycle Surge Current (non-repetitive), I FM (surge)
500 Ampere 2 seconds
Minimum Pt Rating (see Curve 6)
Reverse Power Surge (non-repetitive, 10 fisec., square wave)
12 Kilowatts
Tj = +25 C
4.5 Kilowatts
Tj = +175C
(For other conditions, see Curve 2)
20 Watts**
Average DC Reverse Power in Breakdown Region (-65C ^ T c =^ +115C) (Note: 2)
100 Watts
Peak Reverse Power in Breakdown Region (repetitive) (Note: 2)
Forward Peak Voltage Drop, V PM (T = +115C, I = 12 ampere avg.)
1.4 Volts**
1.0C/Watt
Thermal Resistance, 0J.C---.....
Operating Junction Temperature, T.T
-65C to +175C**
Storage Temperature, T stg
-65C to +200C**
30 Lb-in
Stud Torque
-

Maximum voltages apply with a heatsink thermal resistance of 8C/watt, or

Indicates values included in JEDEC Type Number Registration.

less,

NOTES:
(1)

(2)

(3)

at

maximum

rated junction temperature.

****

JYg-Cm

VRM(rep) applies for a conventional AC to DC conversion application. VnM(rep) and VRii(wkg) can be considered unlimited providing that the additional reverse power generation is taken into account by allowing for its influence on the forward current rating. Considerations similar to voltage
regulator diode applications would apply.
These ratings assume no forward power dissipation. In applications requiring both forward and reverse average power dissipation, reduce case temperature as determined from the maximum case temperature versus average forward current curve by 2.0C for every watt of average reverse power
dissipation.
Case temperature, Tc,

is

measured at the center of any one of the hex

flats.

282

'

1IM4529-30

40

ZOO
60 BO 100
400 600 8001000 2000
SQUARE WAVE PULSE DURATION (t)-p SECONDS

4000 6O00

10,000

NON-RECURRENT REVERSE SURGE

CURRENT RATINGS

1.

10,000

8000
6000

*/>

'-

4l

'
,

J
V)
1-

''l
\

r""

L'

tc

wJ

"^>
1

*j

iooo

^#H
r^H

** *.
AFTER THERMAL EQUILIBRIUM
HAS AGAIN BEEh ESTABLISHE )

n:

W
*l

-.

a.

40 60 80100

20

2O0

400 6008001000 2000 40006000 10000

SQUARE WAVE PULSE DURATION -MICROSECONDS

NON-RECURRENT REVERSE POWER SURGE

2.

I
NO

ES:

1.

2.

CURVES SHOW MAX a MIN AVALANCHE BREAKDOWN VOLTAGES FOR ALL PRV GRADES
BREAKDOWN VOLTAGE INCREASES APPROX 0.1% /*C WITH INCREASING T,

T,

-ZS'C

IOOO

VRM (r.ri
Vrm('OP)

IN4529

rn

N43'
TES 7

CURR :nt

(5n

4*]

DC
RECTIFICATION, SEFER

TO

MUM

i
JOOO

1200

/
i

900

1400

20

24

INSTANTANEOUS REVERSE VOLTAGE-VOLTS

3.

REVERSE CHARACTERISTICS

4.

283

MAXIMUM CASE TEMPERATURE

AVERAGE FORWARD CURRENT

VS.

<

1N4529-30

NO-

I0O0

ECON

^v>

^^-^

e
eT

tf

H Z
<

500

400

-~-~^
\

c
o
RENT-

400

u,S

300

H)

(9 )
UJ
=>
<0 UJ

QZ
E<

200

*
g

200
150

U.

S3

2
10
6
S
CYCLES AT SO Hi

7 8 9

K)

PULSE TIME - MICROSECONDS

SUBCYCLE SURGE FORWARD CURRENT AND t

RATING FOLLOWING RATED LOAD CONDITIONS
2

5.

6.

MAXIMUM FORWARD SURGE CURRENT

FOLLOWING RATED LOAD CONDITIONS

-1

1000

800
600

7^

400

3^

/"

/
!

//

100

80
60

'/

//

//

/
h
L
/

Tj=I7 )C

10

^8.0
-

1.0

5
\

0.8

j H\

6.0

Tj = 25

r/

r^r

y=

0.6

1
7

04

8.

'

FORWARD POWER AS A FUNCTION OF

(Tj = +175C)

AVERAGE FORWARD CURRENT

0.1

0.08

Q06

004

150

|
|

0J02

Sjioo

.5

1.0

1.5

2.0

2.5

3.0

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

1. 75

7.

MAXIMUM FORWARD

CHARACTERISTICS

M
NOTE:

.25

CURVE DEFINES TEMPERATURE RISE OF JUNCTION ABOVE HEAT SINK

PEAK ALLOWABLE DISFOR SINGLE L<V tO PULSE OF DURATION t.
SIPATION IN RECTIFIER FOR TIME Tj, IF STARTING FROM HEAT SINK
TEMPERATURE. EOUALS I7S*C (MAX Tj) MINUS MAXIMUM HEAT SINK
TEMPERATURE DIVIDED BY THE TRANSIENT THERMAL IMPEDANCE.
ITS'C-TmeAtsinK
PPEAK "

"

CKX

O 02

.01 >4

CM36

31

.0

C16

jO

Bi

1.0

2a

G oat 10

PEAK SQUARE WAVE POWER "ON" TIME-SECONDS

9.

284

MAXIMUM TRANSIENT THERMAL IMPEDANCEJUNCTION TO HEATSINK

4O

6 8OK>

1N4529-30

OUTLINE DRAWING
SYMBOL

INCHES
MIN.
MAX.
.450

11.43

.375

9.53

.080

2.03

<j>D

16.94

16.94

17.45

2.92

5.08

.667

.115

.200

Fl

.060

FORWARD POLARITY

*h- REVERSE POLARITY

.667
.687

DIRECTION OF FOWARD CURRENT FLOW;

MILLIMETERS
NOTES
MIN.
MAX.

TERM.

SEATING

LA-

PLANE r

1.52

NOTES:

COMPLETE THREADS TO EXTEND TO WITHIN 2--1/2

THREADS OF SEATING PLANE.
2. ANGULAR ORIENTATION OF TERMINAL IS UNDEFINED.
3. 1/4-28 UNF-2A. MAXIMUM PITCH DIAMETER OF PLATED
THREADS SHALL BE BASIC PITCH DIAMETER (.2268" 574MM)
REF. (SCREW THREAD STANDARDS FOR FEDERAL
SERVICES
1957) HANDBOOK H28 1957 PI.
I.

1.000

25.40

.156

<f>M

.220

.249

5.59

N
*t

.422

.453

10.72

11.51

.140

.175

3.56

4.45

3.96

4
6.32

4.

1.3

MINIMUM FLAT.

EIA-NEMA STANDARD OUTLINE, NEMA SK-5I- EIA RS-241

INSULATING HARDWARE IS AVAILABLE UPON REQUEST.
COMPLIES WITH EIA REGISTERED OUTLINE DO-5

TRY THESE SIMPLE TESTS TO PROVE

HOW SUPERIOR CONTROLLED

ARE COMPARED TO OTHER RECTIFIERS:
True Controlled Avalanche Rectifiers Will Not Be Damaged In Any Way By These Tests.
AVALANCHE

RECTIFIERS

STEADY-STATE

REVERSE IMPULSE

This test operates the rectifier in its high voltage avalanche region at a continuous power
dissipation level of approximately 10 watts, at
avalanche voltages over 800 volts. This is a test
for surface stability at high voltage.

This tests the ability of the rectifier to withstand high transient voltages and to dissipate
high levels of peak power in the reverse direction. Peak reverse power for rectifiers with
avalanche voltages above 800 volts is over 500
watts in this circuit.

ADJUST FOR
3KV PEAK V0LTA6E
ON TRANSFORMER
SECONDARY

10 KV RECTIFIER
(6-E 4JA42IEH20ABI

NEEDLE SPARK SAP.

ADJUST FOR SPARKOVER
AT 5000 VOLTS

10

t5

ME80HMS

TEST RECTIFIERS
SHOULD BE
MOUNTED TO HEATSINK
TO PREVENT THERMAL
RUNAWAY. CASE TO
AMBIENT THERMAL
RESISTANCE SHOULD
NOT EXCEED 28*C/W.

R OHMS, 2 WATT
CURRENT LIMITING

* RESISTOR.
ii7

vac:

o VOLTAGE
;J-O.I
10

S-47 TRANSFORMER
OR EQUAL. 117 VOLT PRI.,
3KV SEC, 30 MA. MIN.

UTC

TEST RECTIFIER

o CURRENT PROBE

UTC S-49 TRANSFORMER

OR EQUAL. 117 VOLT PRI,
4 KV SECONDARY,
10

PROBE

H fd

KV

"

"

MA. MIN.

(DO NOT GROUND TRANSFORMER CASE)

Test
Rectifier

IN 4529
1N4530

Test

Ohms

Rectifier

50K
50K

1N4529
1N4530

Ohms

6K
6K

The impulse voltage

and current in the test
rectifier can be viewed
by connecting a scope
between the indicated
voltage and current
taps and ground.

FACTORY CONTROL TESTS

General Electric Controlled Avalanche Rectifiers are subjected to rigorous tests to assure capability to the
above conditions. In addition, production units undergo tests to control

Minimum/maximum avalanche voltage

5 temperature cycles (-65 to +175C)

Elevated temperature reverse current

500 ampere forward surge current capability

Package leaks (helium leak test)

Forward voltage drop

Internal thermal resistance

Reverse power surge

285

1N4606

SEE PAGE 258

1N4607-8 SEE

Silicon

PAGE 274

Diode
IN4727

lN4727is a very high speed silicon planar epitaxial passivated

and general purpose applications. It features maximum
on junction capacitance and stored charge to ensure reproducible performance in high speed switch-

The General

diode
limits

computer

for

Electric type

circuits, switching circuits

ing circuits.

2000
is a power silicon rectifier diode for use in applications requiring blocking voltages up to
and forward current ratings up to 250 amperes average in single phase applications. This device was
formerly known as 6RW51, and is reverse polarity device. The stud is the anode.

The A291
volts

maximum

absolute

ratings:

(25C) (unless otherwise specified)

1N4727

Voltage

20

Reverse (continuous operating)

volts
.032 .002 DIA.

Current

Average Rectified
Forward Steady-State DC
Recurrent Peak Forward
Peak Forward Surge (1 /*sec.

Duty Cycle)

225
2000

Power
(with Heatsinking .250" from end of diode body)
Dissipation (Note 1)
Dissipation (125C) (Note 2)

500
200

@ 1%

Temperature

<- -65
<- -65
<-

Operating
Storage

Lead

(Vie

Vs2

mA
mA
mA
mA

75
115

inch from case for 10 sec.)

to
to

1N4727,

DHD

mW
raW

+175 ->
+200

300

NOTE:
ALL DIMENSIONS
IN INCHES

CATHODE END

C
C
C

Derate

Note 1
Note 2

For ambient temperature above 25 C

For ambient temperature above 125 C

electrical characteristics: (25C)

3.0
4.0

mW/C

mW/X

(unless otherwise specified)

1N4727
Min.

Breakdown Voltage (Ir

Forward Voltage (If

5 fiA)

By

10

mA)

Vr

(Vh 20V)
= 20V, Ta = 100C)

Reverie Current

(Vr

Stored Charge
(If
10

(Note 5)
(Note 3)

mA)

Typ.

Max.

Volts

30
0.79

0.85

Volts

Ir
Ir

.02

0.1

10

/iamp
/tamp

Qs

24

40

pCoul

1.5

Capacitance

= 0V)

(Vr

Note

(Note 4)

charge as measured on B-Line Electronics model QS-3 Stored Charge Meter (pulse
amplitude = 5 volts, pulse width = 50 ns, rise time = 0.4 ns, source impedance = 10 ohms)

3: Stored

Note 4

Capacitance as measured on Boonton Electronics model

nal level of 50 mv rms and a frequency of 1 mc.

286

75A Capacitance Bridge

at a sig-

pf

1N4727

NOTE

S:

STORED CHARGE

6
a 0rwar <1 biased diode is subjected to a reverse voltage step a
reverse current
will fl
flow
for a short time as a result of the stored charge consisting
of minority carriers
in the vicinity of the junction. The typical waveform
of reverse current vs time for a
diode subjected to a large reverse voltage is shown in Figure
1. The time required for
the diode to recover its reverse blocking condition will depend
on the

^n

quantity of charge
stored and the rate at which the charge is removed by
recombination inside the diode
and by current flowing
the external circuit. Conventionally, the speed of a diode is
characterized by the reverse recovery time, t, measured to some
arbitrary current
level as in Figure 1. However, for higher speed diodes
reverse recovery time is not a
satisfactory parameter for characterizing the speed of the
diode since it is dependent
on arbitrary circuit conditions and is very dependent on the construction
of the test
circuit stored charge, on the other hand, is measured by
integrating the reverse current of the diode (as shown by the shaded area in Figure
1), and is consequently much
less dependent on the construction of the test circuit and on
arbitrary circuit conditions,
btored charge is a more ideal parameter for characterizing the speed of
a diode since
it represents an intrinsic characteristic of the
diode and can be measured with good
reproducibility on low cost instruments which have direct meter readout.
Stored charge can be correlated with reverse recovery time measurements
on a
specific t test jig. Typical correlation curves are shown on the
graph below.

TYPICAL REVERSE
RECOVERY WAVEFORM
FOR A HIGH SPEED DIODE
FIGURE

References
ill
(2)

EC Pr P sed Method for Direct Measurement of Diode Stored Charge, JS-2-65-11

iW
Measurement of Stored Charge
High Speed Diodes," T. P. Sylvan Application Note #90.30
in

able on request)

TEMPERATURE COEFFICIENT-0.5

-1.0

d\^/dT - MV/*C

-2.0

-1.5

-2.5

--L

(avail(

dVF

REVERSE CURRENT Wl
TEMPERATURE
Vn 20V

dT

h
/

1
f

/
'

/
\

/
-/-

-V\

\>

/
ZZ3
1
L
^t-

...

~Z

\
J VF AT 25 C

FORWARD VOLTAGE -v F
1

VOLTS

TYPICAL VARIATION OF STORED CHARGE

UNCTION TEMPERATURE -Tj -c

!

T PICAL CORRELATION BETWEEN

1

St ORED CHARGE AND

RE COVERY TIME
(Q s

REVERSE

MEASURED

05 -3

"

IN B-LINE ELECTRONIC 5
STORED CHARGE METER AT

>

V
'n*

-I0MA, t MEASURED IN
TEKTRONIX 291 DIODE TEST FIXTURE
AT CON 3ITI0 MS IN DICA1 ED)

Ip

V
r>*

\*

/v

<^
'

K"
M
"#>

.v
,n*

FORWARD CURRENT-

- MILLIAMPERES

STORED CHAROE-Os - PICO COULOMBS

287

',>

\i*

1N4829-30 SEE

PAGE 266

Silicon

Diodes

IN4863

lowElectric 1N4863 Double Heatsink Diode is a high voltage, low capacitance diode for
and high-current, high-speed switching circuits and general purpose applications. This diode incorporates
an oxide-passivated, planar structure built on a high resistivity, epitaxial layer grown on a low resistivity
forward voltage
silicon substrate. The 1N4863 offers controlled conductance, minimum and maximum
necessary for the design of
at four levels of forward current. This closely-controlled conductance is
clamping and logic circuits where tight tolerances on voltage levels are required.

The General

Double Heatsink Diodes receive a one-hour glass anneal bake at 425C. This processing optimizes
hermetic integrity under temperature cycling and thermal shock conditions exceeding MIL-S-19
19500C requirements. All DHD's then receive a 300C stabilization bake for 168 hours to assure parameter stability and reliability under maximum storage and operating junction temperature(s).

All

DHD

absolute

maximum

ratings:
1N4863

Voltage

50

Reverse (Continuous)

volts

Current

Average

0.155

ma
ma
ma

200
600
250
4

Rectified

Recurrent Peak Forward

Forward Steady-State DC
Peak Forward Surge (1 /usee)

-1.2500.021
0.019

amps

0.180

W
.__

MAX

>3
y-*

Power

500

Dissipation

0320022 DIADIA.
Temperature

-65 to
-65 to

Operating
Storage
Lead, Va"

Vsi" from case for 10 sec.

electrical characteristics:

+200
+200

(25C)

rHODE ENDEND-^
CATHODE

C
c
C

300

'

NOTE: ALL DIMENSIONS

(unless otherwise specified)

IN4863
Forward Voltage
(If = 0.1 ma)
(If = 1.0 ma)
(I, = 10 ma)
(If = 100 ma) (Note

1)

Min.

Max.

V,
Vr
Vf

VF

440
560
690
830

550
680
820
1200

Bv

70

mv
mv
mv
mv

Breakdown Voltage
(Ib
(I

= 5 /a)
= 100/ia)

volts
volts

BT

Reverse Current
(V B = 50 V)
(Vb = 50 V, T A
(Vb = 80 V)

= +150C)
(Vb = 80V,Ta = +150C)

Ib
Is
Ib
Ib

50
50

pf

t
t

nsec
nsec

na

na
fia

Capacitance

(Vb

= 0V)

(Note 2)

Reverse Recovery Time

(If = Ib = 10 ma, Recover to 1 ma) (Fig. 1)
(If = 10 ma, V = 6V,Rl= 100O, Recover

tolma)
(If

(Fig. 1)

= Ib =

100 ma, Recover to 10 ma) (Fig. 2)

t,r

note:
(1)
(2)

< 2%)
bridge at a
75A
capacitance
Capacitance as measured on Boonton Model

Pulsed measurement (Pulse width

level of 50

mv and a

frequency of

<

300 ^sec, Duty cycle

mc.

288

signal

IN

a 075
0075

INCHES

0.060

.02

H+DIODE

PLANAR

UNDER

1N4863

'

TEST

:iok

2.5K

l\t
DISC.

0-30 VDC 6+.(ADJUST I =IOMA)

F

TEKTRONIX
TYPE 110 OR
PULSE

TEKTRONIX
TYPE N
SAMPLING PLUG

GENERATOR

RISE TIME

TRIGGER

<.5NS

<.6NS

LOW CURRENT

TEST CIRCUIT

rr

FIGURE

if
PULSE

<5-T

DELAY

|
VR

30

sou

OUTPUT

INPUT

VR PULSE

SAMPL-

(I

UNIT

IN

RISE TIME

_J~Vr

ING

SCOPE

R)

i
i

TRIGGER

S\
r\

HIGH CURRENT TEST CIRCUIT

FIGURE 2

TEMPERATURE COEFFICI ENT

VS

FORWARD CURRENT
2.6

2-2

^T

4j+/

v^y

IR

U
1.4

1.0

log

IF

in

ma

FIGURE 5

289

Passivated

A14 SERIES

Rectifier

1N5059

TRANSIENT VOLTAGE PROTECTED

1N5060

200-1000 Volts

Amps

2.5

1N5061
THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED
GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PROVIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT
OF THE
THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION
NO
GLASS;
BY
SOLID
SILICON PELLETS PN JUNCTION ARE PROVIDED
HERMETICALLY
THE
WITHIN
PRESENT
ORGANIC MATERIALS ARE
SEALED PACKAGE.

1N5062

A14P

"Transient- Voltage Protected." This device will dissipate up to 1000

by
watts in the reverse direction without damage. Voltage Transients generated
dissipated.
are
lines
power
household or industrial

The A14

is

absolute

maximum

ratings:

(25c unless otherwise specified)

1N5059 1N5060 1N5061

Reverse Voltage (-65C to +175C,Tj)
(-65C to +165C for 1N5062 and A14P)
Working Peak, V RWM
DC,

VR

*Average Forward Current, I

*100C Ambient (90C for 1N5062 and A14P)
25C Ambient (See Rating Curves)

(A14B)

(AMD)

(A14M)

200
200

400
400

600
600

1.0

"*

2.5

N5062
(A14N)

800
800

A14P
1000
1000

Volts
Volts

Amp
Amp

*Peak Surge Forward Current, I FSM

Non-repetitive, .0083 sec, half sine wave,
Full Load JEDEC Method

No Load (25CCase)

50
65

Amps
Amps

90
100

Amps
Amps

Peak Surge Forward Current, I FSM

Non-repetitive, .001 sec, half sine wave,

Load
No Load (25C Case)

Full

Junction Operating and Storage

Temperature Range, T T & T STG
I-t,

RMS

65 to

Voltage

Peak Non-repetitive Reverse Power Rating, P RM

20 fj.sec, half sine wave, at Max. T T
*100 M sec,

JEDEC

-Mounting: Any
mounting.

position.

Lead Temperature 290C maximum

T,
*T,
*Tj

=
=
=

Current,

IR,

at

Rated

V RRM

Watts
Watts

inch from body for 5 seconds

maximum

5.0

00

*A

200

300

Vr RM

...

200

mA
^a

^-

^A

mA
mA

I,.

25C
100C

T RR
Recovery Time, T RR

Typical Reverse Recovery Time,

Recovery circuit per MIL-S-19500/286C

JEDEC Registered data.

0.2

0.2

0.3

0.5

0.5

20

20

20

30

30

-*

2 go

3
6

r*>

sec.

during

Volts

1.2

200

Typical Reverse Current,

Reverse

1000

175 C

Maximum

to

<

=
=

T T = 75C

25C
165C

Typical Reverse Current, I R at Rated

Tj
Tj

Volts

(25C unless otherwise specified)

Forward Voltage Drop, V F 1A,

Maximum Reverse

1600

450

eleCtr'lCal Characteristics*.

Maximum

Amps-

4.0

(for fusing), .001 to .01 sec.

Maximum Avalanche

65 to +165'

+ 175-*-

/Asec

1N5059
1N5060
1N5061
1N5062

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

AMP

SINGLE PHASE
600

VOLTS & BELOW

AI4 SINGLE

PHASE HALF
WAVE RESISTIVE LOAD

=60"C/W

A 9j. A
S.

HEAVY TIE LUGS OR

LARGE COPPER AREA

PC

>

C^
"^

E
HI

>

LEAC LENGTH 1/2"

"45* C/W

BOARDS.

9j. A

*1Q'C/W

TYPICAL THERMAL LUG

MOUNTING.

i-

LEAD LENGTH 3/8"

9j-L" S7 " C/W

TOTAL THERMAL RESISTANCE

LEAD LENGTH

^%^
^^

N^Sj-L

'80 C/W
TYPICAL PC BOARD
MOUNTING SMALL COPPER

37" C/W

3/4

"

C 9j. A

AREA.

0.8

0.4

J/~,

TIE POINT OPEflATtON

-//

THERMOCOUPLE PLACED M
SOLDERED JOINT OF LEAD
TO EXTERNAL HEAT S'NK.

AMBIENT TEMPERATURE-

LEAD TEMPERATURE

AMBIENT OPERATION

TIE POINT

TL

"C

OPERATION

RESISTIVE OR INDUCTIVE LOAD

800 AND 1000 VOLTS

-A

I
..

70

90

110

AMBIENT TEMPERATURE- 'C

LEAD TEMPERATURE

AMBIENT OPERATION
TIE POINT

TYPICAL TIE LUG MOUNTS

TL

'C

OPERATION

TYPICAL PC BOARD MOUNTING

i.o"

Vs

9/,

IT^F
~^ PERF

BOARD

O"^
.056

GLASS EPOXY

PC BOARD

291

1N5059
1N5060
1N5061
1N5062

TYPICAL CHARACTERISTICS

A14P
404

00

^ FORWARD

MAX.
TYP.

VOLTAGE

WCr*J

175'C^Jy

I00

TEMPERATURE
VTY >ICAL
COEFFICIENT
rYP.

2SC \
1

\
MAX. 2S*C \
1

>

zl

IaJ

a.

en

10mA

III

INSTANTANEOUS FORWARD VOLTAOE-VOLTS.

FORWARD TEMPERATURE COEFFldENT-mv/'C

FORWARD CHARACTERISTICS

200

800

600

400

INSTANTANEOUS REVERSE VOLTAGE-VOLTS

REVERSE CHARACTERISTICS AT SELECTED

JUNCTION TEMPERATURES
100

10000

AT MAXIMUM

*N0 LOAD

JU HCTIO N TE IIPERA lUHt

r-

25*C

|
F JLL LC AD*^^>.

a.

%
Mi

a.

[^

10

g
j^

a.

lOjuaac

IOO/imc

msec

HALF SINEWAVE PULSE DURATION

IOidmc

iv

(currint)

MAXIMUM NON-REPETITIVE AVALANCHE

SURGE POWER
10

"00

CYCLES AT 60 CYCLES PER SECOND

MAXIMUM NON-REPETITIVE MULTICYCLE

FORWARD SURGE CURRENT
292

CAPACITIVE LOADS

1N5059
1N5060
1N5061
1N5062

Current Derating (capacitive load)

Average forward current as specified under MAXIMUM RATINGS

page 1 and derating curves for high temperature operation page 2,
must be corrected for applications with capacitive loads. As the current
conduction angle, <x', is decreased, the peak current required to maintain the same average current increases, i.e., the peak-to-average current ratio increases from 3.14. Figure 9 gives the derating required
based on this increase in peak to average current ratio for sine wave
operation. For more complete information consult Application Note

A14P
PEAK
FORWARD
CURRENT
AVERAGE

200.30.

METHOD:

1.

Determine conduction angle

<x

'

in degrees for particular

circuit as designed.
2.

3.

Enter Figure 9 for the particular conduction angle and

read corresponding percent of forward current per cell.
Multiply this value times average forward current for
resistive load from figures on page 2 as given for the
actual ambient or tiepoint temperature required.

a'=

CONDUCTION ANGLE (180)

SHORTENED CONDUCTION ANGLE

OSCILLOSCOPE PRESENTATION

TYPICAL EXAMPLES (25'C Ambient Temperature)

Example Example Example Example
No. 1
No. 2
No. 3
No. 4

Input Voltage

100

100

300

300

Volts

34

75

180

270

Volts

3.5

3.5

Ohms

0.5

0.5

0.5

0.5

Amps.

30

100

30

100

mF.

170

70

90

50

D.C. (Average) Output Voltage

Surge Resistor

Load Current
Input Filter Capacitance

Conduction Angle
Rated Average Current
(Resistive Load)
Rated Average Current
(Capacitive Load)

Units

.
J-

Degrees

Amp.

10

20

30 40

50

60

70

80

90 100

110

120

FORWARD CONDUCTION ANGLE

0.98

0.73

0.80

0.65

Amp.

IN

130 140

150 160 170 ISO

DEGREES-a

DERATING FOR SHORTENED

CONDUCTION ANGLE
.150

INTERNAL CONSTRUCTION
1.

Dual heatsink design for maximum heat dissipation under both surge and continuous duty.
No fragile "whiskers" or S leads with their

MAX.

(3.8IOMm.)

bid

Marking band to appear

on cathode end.

.180

MAX.

(4.572 Mm.)

potential trouble spots.

2.

Glass Package. No internal cavity to act as

potential source of moisture or contamination
on junction. Temperature coefficient of the glass
is

3.

matched with the internal

050*MAX.
Mm.)

(1.270

1.0 MIN.

(25.400Mm.)

.035 MAX.
(.889 Mm.

AFTER
TINNING

DIA.

OUTLINE

parts.

DRAWING

Diffused silicon junction passivated surface.

ALL OIMENTIONS ARE

IN

INCHES

AND (METRIC!

*WEL0AN0 SOLOER FLASH NOT

CONTROLLED

IN

THIS

AREA

TYPICAL APPLICATIONS

FREE-WHEELING RECTIFIERS
TIME DELAY CIRCUITS

POWER LOGIC CIRCUITS

ARC SUPPRESSION
BATTERY CHARGERS
TV DAMPER DIODES
293

TV AND RADIO POWER SUPPLIES

COMMUNICATION EQUIPMENT
S.C.R.

TRIGGER CIRCUITS

SMALL PORTABLE APPLIANCES

GENERAL PURPOSE POWER SUPPLIES

LOW LEVEL LIMITERS

Lead Mounted

1N5179

SEE PAGE 266

1N5332

SEE PAGE 209

A15 SERIES

Rectifier

1N5624

TRANSIENT VOLTAGE PROTECTED

200-800 Volts
5.0 Amps

1N5625
1N5626

THE GENERAL ELECTRIC A15 IS A 5.0 AMPERE RATED, AXIAL LEADED

GENERAL PURPOSE RECTIFIER. ITS DUAL HEATSINK CONSTRUCTION
PROVIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION
OF THE SILICON PELLET'S PN JUNCTION ARE PROVIDED BY SOLID
GLASS; NO ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLY SEALED PACKAGE.

1N5627

is "Transient Voltage Protected." This device will dissipate up to 1000

watts in the reverse direction without damage. Voltage Transients generated by
household or industrial power lines are dissipated.

The A15

absolute

maximum

ratings:

(25c unless otherwise specified)

Reverse Voltage (-65C

Repetitive Peak,

to

1N5626

N5627

N5624

1N5625

(A15B)

(A15D)

(A15M)

(A1SN)

200
200

400
400

600
600

800
800

+175C, Tj)

V H rm

DC V r

Volts
Volts

Average Forward Current, Ip

* 70 C ambient, see rating curves
25 C ambient, see rating curves
*Peak Surge Forward Current, I FSM

Non

Amps
Amps

125

Amps

3.0

repetitive, .0083 sec, half sine

wave,

Load JEDEC Method

Peak Surge Forward Current, I FSM
Full

Non-repetitive, .001 sec, half sine wave,

225
65 to +175
65 to +200
25

Full load 175C, Tj

Temperature Range
*Storage Temperature Range

""Junction Operating

Ft,

RMS for fusing .001 to .01 sec.

Peak Non-repetitive Reverse Power Rating

20 /tsec half sine wave at Max Tj
*100/*sec,

Mounting

1000
450

JEDEC

Any

position.

Lead temperature 290C maximum

body for 5 seconds

maximum

to i/8 "

from

during mounting.

electrical characteristics:

Maximum Forward Voltage Drop, V F

I F = 5.0A, T A = 25C
*I P = 3.0A, T A = 70C
Maximum Reverse Current, I R at rated V RRM

Volts
Volts

1.1

0.95

Tj = 25C
*Tj = 175C
Typical Reverse Current

/iA

5.0

300

300

@ 25C

200

200

/*A

1.0

MA

Typical Reverse Recovery Time, Trr

2.5

/isec

Maximum Reverse Recovery Time,

5.0

/isec

Trr

Recovery Circuit Per MIL-S-19500/286C

JEDEC Registered data.

294

A15

CIRCUIT DESIGN INFORMATION

1N5624-7

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

SINGLE PHASE, RESISTIVE AND INDUCTIVE LOADS

^^LEAD

LENGTH -3/"

^LEAD LENGTH*
S^"B'J L-25" C/W

I/2"

S^ ^LEAD

^^

30

SO

70

90
TIE POINT

AMBIENT OPERATION

B JL

LENGTH
30* C/W

HO

3/4"

ISO

TEMPERATURE-

ISO

ITO

OPERATION

TIE POINT

(See Tie Point Mounting Below)

TYPICAL CHARACTERISTICS
WOO
1

uu

2?"

-,

_L.

40OV

-800V-

25*C

75-C

//maximum
iao

01

u
8

X
Ul

z
u

3
u

1.0

UJ

>
K

u
z

EOOV

O
Ul
z
z
<

I
0.1

400 i

>^

0.01

0.1

2C
INS1

4GK}

6C

eoovX

60

/boov

IOC K>

ANTANEC US REVE RSE VOLT A6E-V0L1 S

INSTANTANEOUS FOWARO VOLTAGE-VOLTS

FORWARD CHARACTERISTICS

REVERSE CHARACTERISTICS

295

I2C

A15
1N5624-7

TYPICAL CHARACTERISTICS

I50

ioo

FULL LOAD

25 -

Iptec

lOpMC

lmtc

lOOpsec

lOmBi

HALF SINEWAVE PULSE DURATION (CURRENT)

CYCLES AT 60 CYCLES PER SECOND

MAXIMUM NON-REPETITIVE
AVALANCHE SURGE POWER

MAXIMUM NON-REPETITIVE
MULTICYCLE FORWARD
SURGE CURRENT

so

?20
I

UJ

15

a
IE

io

_l

<
111

40 SO 60 70 80 90
PEAK REVERSE VOLTAGE- OC VOLTS
10

20

30

100

1/8

1/4
L,

3/8

1/2

LEAD LENGTH

3/4
5/8
INCHES

7/8

STEADY STATE THERMAL RESISTANCE

JUNCTION CAPACITANCE

296

1.0

A15
1N5624-7

Current Derating (capacitive load)

Average forward current as specified under maximum ratings, page

1,
and derating curves for high temperature operation, above, must
be

FORWARD
CURRENT

corrected for applications with capacitive loads. As the current

conduction angle, a.', is decreased, the peak current required to
maintain the
same average current increases, i.e., the peak-to-average current ratio

AVERAGE

la-

increases from 3.14. Figure 3 gives the derating required based

on
peak to average current ratio for sine wave operation.
For more complete information consult Application Note 200.30.

this increase in

METHOD:

1.

Determine conduction angle

a' in

"PEAK

a'-

CONDUCTION ANGLE (180)

SHORTENED CONDUCTION ANGLE

degrees for particular

circuit as designed.
2.

3.

OSCILLOSCOPE PRESENTATION

Enter Figure 3 for the particular conduction angle and

read corresponding percent of forward current per cell.
Multiply this value times average forward current for
resistive load from igures 1 and 2 as given for the
actual ambient or tiepoint temperature required.

See Typical Examples Below

TYPICAL EXAMPLES (25C Ambient Temperature)

Example Example Example Example
No. 1
No. 2
No. 3
No. 4

Conduction Angle

(a)

Rated Average Current

(Resistive Load)

of Average Current

Rated Average Current

(Capacitive Load)

170

110

130

70

0.98

0.86

0.92

0.73

2.9

2.6

2.8

2.2

Units

Degrees

Amp.

%
Amps.

10

20

30 40

50

60

70

80

90 100

110

FORWARD CONDUCTION ANGLE

120
IN

130 140

150 160 170 180

DEGREES-a

DERATING FOR SHORTENED CONDUCTION ANGLE

TYPICAL TIE LUG MOUNTS

h

OUTLINE DRAWING

1.000
"

MIN.

(25.400 Mm.)
.083 MIN.
(2. 1082 Mm

^^
=0

^v PERF

.250? .0(0
>.350l.354Mn5

BOARD

i_
9

Ve

i.o"

n:

3 9

ALL DIMENSIONS ARE

IN

TYPICAL PC BOARD MOUNTING

,230x
(6.390 max

053MAX.0IA. T
0.3462 Mm.)
TINNED COPPER WIRE

INCHES AND (METRIC)

o
"^v .056

GLASS EP0XY

PC BOARD

297

Silicon Unijunction

Transistors

Electric Silicon Unijunction Transistors are three-terminal devices having a stable

type negative resistance characteristic over a wide temperature range. A stable peak point
and a high peak current rating make these devices useful in oscillators, timing circuits, trigger
silicon transiscircuits, and bistable circuits, where it can serve the purpose of two conventional
reliable under
tors. General Electric's Fixed'Bed Construction makes these transistors extremely
It also
severe conditions of mechanical shock, vibration, centrifugal force, and thermal shock.

The General

"N"

These
provides a lower terminal resistance and improved uniformity of electrical characteristics.
transistors are hermetically sealed in welded cases.

10

J +20

Ig

>

i2C K

5470 iI

$ 27ft

FEATURES

5*

-,

-2

\0

*e
6o
*;
+4
o
AMBIENT TEMPERATURE-T A -DEGREES CENTIGRADE
ONLY THE UNIJUNCTION SUBMITTED TO TEMPERATURE

20

+i

DO

maximum
Total RMS Power Dissipation Unstabilized
Total

RMS

RMS

Power Dissipation

Emitter Current
Peak Emitter Current 3

'

Stabilized

(T,=

Low leakage Current

Low Peak

Guaranteed Minimum Pulse Voltage

A,

2N494,

450
600
70

A,

mw
mw

1
1

ma

amps

volts

60

-65
-65
-65

to
to
to

+140
+175
+175

=
=

C
C
C

2.

Derate
Derate

3.9
2.6

mw/C
mw/C

description
General Electric's Silicon Unijunction Transistor consists of an

"N" type

silicon

*25C, unless otherwise specified.

298

CONFIGURATION

NOTE

I:

Lead diamelei

'S

conhoii'd

ine

?S0 l'~m 'Pe Stra?SC arj era el leac a

(one Oehveen CSC and

ng plane

ma-

ol

Betweer
:?;

is

heid

NOTE 1 leads ha.iog rra.nium damere'

.01
01* measured m gaging plane ZK
1

000 below the seating plane of the device

007 ot true position rela-

shall be within
tive to a

maximum

H0TE

Measured from max. diameter of

3:

width tab.

the aetual device.

H0TE

4: This

lone

is

controlled for auto

matic handling The variation in actual diameter within this zone shall not exceed 010

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

EMITTER

BASE ONE
BASE TWO

Bl

B2

bar

mounted between two ohmic base contacts with a "P" type emitter near base-two.
The device operates by conductivity modulation of the silicon between the emitter and
base-one when the emitter is forward biased. In the cutoff, or standby condition, the
emitter and interbase power supplies establish potentials between the base contacts,
and at the emitter, such that the emitter is back biased. If the emitter potential is
increased sufficiently to overcome this bias, holes (minority carriers) are injected into
the silicon bar. These holes are swept toward base-one by the internal field in the bar.
The increased charge concentration, due to these holes, decreases the resistance and
hence decreases the internal voltage drop from the emitter to base-one. The emitter
current then increases regeneratively until it is limited by the emitter power supply.
The effect of this conductivity modulation is also noticed as an effective modulation of
the interbase current.

DIMENSIONS WITHIN
JEDEC OUTLINE TO-5
EXCEPT FOR LEAD

0.16C/mw)

increase in amb. temp. (Thermal resistance to case

0.08 C/mw)
increase in amb. temp. (Thermal resistance to case
the UJT up
3. Under normal operation, thermal runaway conditions cannot exist with
positive
to a junction temperature of 140C since the temperature coefficient of Run is
below this temperature and Inn is negligible. For this reason an unstabilized power
rating can be used with the UJT which is derated to zero at 140C. The UJT can be
used at temperatures above 140 C but in this case external resistance must be used in
the emitter and interbase circuits to limit the power dissipation and prevent thermal
runaway. The power rating for this condition is the stabilized power rating and is
derated to zero at 175C. It is also important to provide circuit stabilization in the
interbase circuit when the UJT is used in pulse type applications since the instantaneous temperature of the silicon could rise to a high enough value to permit runaway.
capacitances
4. Emitter peak current should be limited to two amperes for discharge
up to 10"fd, with a peak point voltage of 30 volts. For higher values of C or Vp, resistance must be added in series with the capacitor to protect the emitter circuit.
1.

Point Current

THROUGH

150 C)

Emitter Reverse Voltage (Tj = 150C)

Operating Temperature Range
Operating Temperature Range Stabilized 3
Storage Temperature Range

140

+1

2N489,

ratings*

absolute

Wide Temperature Range

Stable Operation over

y/

2N489,

A,

through

2N494,

A,

2N489-94, A, B

electrical characteristics:

<at25c unless otherwise noted)

General Electric Unijunction Transistors are specified

primarily in three ranges of stand-off ratio and two
ranges of
interbase resistance. Each range of stand-off ratio has
limits

of 10% from the center value and each range of interbase

resistance has limits of 20% from the center value.

MAXIMUM
Intrinsic

Standoff
Ratio

Type No.

(See
note 1)

Vb =

TO-5

Modulated
Interbase
Resistance

Interbase
Current

(See

li:

Emitter Reverse Current

=
=

=
V RB =
Ie

50

ma

Vb-f. z=

60V

10V

3V
Rbbo

Iblmmoh)

Ve(SAT)

IeBL>0

ohms

ma

volts

/"a

Min. Max. Min.

Max.

Min.

Max.

MINIMUM

Voltage

50 ma
Vbb
10V

note 2)
V,,B

Emitter
Saturation

10V

=
V B2E =
Tj

150C

Vbe

The

Current

Current

= 25V

Vbb

=
=

(See note 3)

Ip

Iv

VoBl

Aia

ma

volts

Iebl'o

.62

4.7

6.8

6.8

22

20

12

2N489A

.51

.62

4.7

6.8

6.8

22

20

12

2N489B

.51

.62

4.7

6.8

6.8

22

20

2N490

.51

.62

6.2

9.1

6.8

22

20

12

2N490A

.51

.62

6.2

9.1

6.8

22

20

12

2N490B

.51

.62

6.2

9.1

6.8

22

20

2N491

.56

.68

4.7

6.8

6.8

22

20

12

2N491A

.56

.68

4.7

6.8

6.8

22

4.3

20

12

2N491B

.56

.68

4.7

6.8

6.8

22

4.3

20

2N492

.56

.68

6.2

9.1

6.8

22

20

12

2N492A

.56

.68

6.2

9.1

6.8

22

4.3

20

12

2N492B

.56

.68

6.2

9.1

6.8

22

4.3

20

2N493

.62

.75

4.7

6.8

6.8

22

20

12

2N493A

.62

.75

4.7

6.8

6.8

22

4.6

20

12

2N493B

.62

.75

4.7

6.8

6.8

22

4.6

20

2N494

.62

.75

6.2

9.1

6.8

22

20

12

2N494A

.62

.75

6.2

9.1

6.8

22

4.6

20

12

2N494B

.62

.75

6.2

9.1

6.8

22

4.6

20

intrinsic standoff ratio,

v, is

essentially

0.2

0.2

0.2

0.2

0.2

0.2

The interbase resistance is nearly ohmic

and increases with temperature in a well defined manner. The temperature coefficient at
25 C is approximately 0.8% /C.
2.

The base-one peak pulse voltage is measured in the circuit at right. This specification
on the A and B versions is used to ensure a
minimum pulse amplitude for applications in

3.

= Peak point emitter voltage

= Interbase voltage
= Junction Temperature

Vbb

(Degrees Kelvin)

SCR

firing circuits

circuits.

299

and other types of pulse

One

ioon
Vbb
20V

10V

Iebl-o

R B

Base

Peak Pulse
Voltage

.51

Where

Tj

Point

2N489

constant with temperature and interbase voltage. 7) is defined by the equation

200
VP V V
Vbb _l
Tp

Vp

Valley

30V

notes:
1.

Peak
Point

I
-O+20V.5V

^EMITTER CHARACTERISTICS

2N489-94, A, B

-^-UPPER LIMIT ALL TYPES

k.

,.-

NEGATIVE

CUTOFF

M- RESISTANCE -*

REGION

-SATURATION

Vp

**

REGION

REGION

-PEAK POINT

-j

EMITTER TO BASEONE DIODE

CHARACTERISTIC

Vea-iov

/\

S>

^^-L;izzz^ss^^1

'

FOR

90 TH PERCENTILE

^\V*

,VALLEY POINT \

S?'

Vc(SAT)-

sf

^ ''

90TH >ERCENTILE^
|

-- ~

R LIMIT
VERSIONS

"B"

'J-

'

MEDIAN

FOR

'

B"

VERSIONS

ALL TYPE S)

^2-
50MA

Iv

Ip
_.

parameters and measure-

important

ing

= + 25C
Ib =0

fl

Emitter Characteristic curves show-

Static

ment points (exaggerated

to

show

x *\

details).

/
/

\ MEDIAN

ALL TYPES

\
O

EMITT :r ch* RACTE R1STIC S

s TATIC

12

-60
-20
+60
+20
AMBIENT TEMPERATURE - T A

>
i

\ V BB

\v

>

+140
+100
DEGREES CENTIGRADE

EMITTER BASE TWO REVERSE VOLTAGE -V B g E -VOLTS

10

\V

IB'

EMITTER REVERSE CURRENT CHARACTERISTICS

30V

20V

IOV

ooo MEASURED VALUES

..'$&
Ve-Vp'A+B LOG

\jB^

VE o_c*

vw-o + ,V

T - Rnp

' *-
10

14

12

EMITTER CURRENT-

IE -

16

I E -I E R NP

.'&"

BB

^r^^^

(Rnp-5-GK)

20

IB

VBB .|5V
T=25'C

M1LLIAMPERES

-02

EMITT .R CH VRACTE RISTIC S

s TATIC

T A *+25 c

A
v^

IB

-50V

-~v BS = 20V
EMITTER CURRENT -I E - MICROAMPERES

STATIC EMITTER CHARACTERISTICS

-V BB =1 )V

V \ ><
o<

AT PEAK POINT

-v BB =: V

1000
(0

~**7

z
u

'

10

VE

if)

EMITTER CURRENT -I 6

90%

12

MILLIAMPERES

l.

...
t

or

o
=

R BI

100

///

UJ

2
H

EMITT R CH* RACTE RISTIC S

s TATIC

+ l25 "C

<'

'/
//

-1
S.

\
\V^
\

"'"

BB*30V
Li

'-Vbs

20V

>

TA =I25C_
"

Tfi

Z^
.^^

25C

UJ

Vbb-io V

5V

EMITT

==-..-.:

.001

01

.1

CAPACITANCE -C| -MICROFARADS

10

12

14

16

18

20

EMITTER VOLTAGE FALL TIME

EMITTER CURRENT-I E -MILLIAMPERES

VS. CAPACITANCE IN
RELAXATION OSCILLATOR

STATIC EMITTER
CHARACTERISTICS
300

INTERBASE CHARACTERISTICS

2N489-94, a,

i IE

~~
STATIC INTERBASE

CHARACTERISTICS

40 \
10 MA

IE

7
bitarixiM characteristic curves
showiaa. important parameter* and

raeaturement peiati.

o-

tic

"

IT

/
/

"^
1

/ 40MA Hit
/

/
/

LIMITS-

"1

/
90%

20MA

iJ
Static

'

/I E

~"V_ J^-***

10

12

TWOCUBKCNT-I.,

IG

ib

WLL-AMPWICS

I
1

o
a>
4-4o
+40
*o +ioo +rao *mo
WCTIDD nSPCHATIMC-T^-OSOItefit CSMrNB*0i

VARIATION Of R BB WITH TEMPERATURE

L0r-

i.oji-

T A = + 25 c

4-

SASC TWO CWWirfT- t,

-WUUWCttS

^-""^

IlfillJ

<

"

"""

HI
ftse

",

vol *.-** -VOLTS

VARIATION OF R BB WITH VOLTAGE

k>Kn-vw.n
*?

Tuifli

nimrni

ii

mm tawnnu

fS^rK; KMWRBASE

iiiAiiAcfwpiN^ii^
1301

50MA

In

-w

OilRA^i^CS'i

2Q

2N489-94, A, B
'

10
id

UJ

5
<

y ^90

TH PERCENTILE

V-90TH PERCENTILE

Tj

a.

-55 c

^V\

^-MEDIAN

Q.

MEI)IAN-

z
UJ

Ta

z.

-5 5C

o
Q.
<
INTERBASE VOLTAGE -VBB ~ VOLTS

20

10

INTERBASE VOLTAGE -V BB

VOLTS

30

^^90TH

W-

5
2 iU

PERCENTILE

K"~"^ MEDIAN
'

z
o

10

MINIMUM LIMIT
FOR ALL TYPES

_j

INTERBASE

VOLTAGE

V 9b

"

VOLTS

Z0

10

INTERBASE VOLTAGE -V BB - VOLTS

'
-^90 TH PERCENT

LE

90TH PE RCENTI LE

T A = + I2!>C

r-

-t

125 <

MED IAN
MEDI \H-

1.0

q!

0.8

20

10

30

40
INTERBASE V0LTAGE-V BB - VOLTS

INTERBASE VOLTAGE -V BB -VOLTS

VARIATION OF

VARIATION OF

WITH V BB

WITH

Vbb,

I
i"\-

ng

mm,
^ite?^

NORMAUZINO <9VI$

^lj,^*^r^^*>

302

:
.

':^ :^t^7:B^V-^^^ffl|

2N489-94, A,""JH

DESIGNING SCR FIRING CIRCUITS

5r
>
aol

1
s

2N489

ui

A ANC B

i*L

s ,4 r
L2r
S
8

S
N

-fyr

o.e>
]

5 02^-

Period of Relaxation Oscillator

t

IS

JO

29

SO

40

35

INTERBASE VOLTAGE- BB - VOLTS

IW3, In (^-)
1-17

Maximum Value

of R, for oscillation

(-55 C to +140"C)
Ri (max) = 430 Vi* (except B versions)
Ri (max) = 1800 V, s (B versions only)

'

1
1

= Period in Seconds
= Capacitance in Farads

r
Ci

=
=

K,

Vi

Ki-sUtanre in

g
s

in volts

V?)

\-\

2N.8.-68,

2711110%

35V

PUL5rGp*zJ

35V

^xr

*l 4 k

2ol

\-

jj

2NI929-I935

-I

06
S
2

nWEtfT

+20

+60

+100

rHM-ftArtfR-T*-.|QftCS CE*tt6RA0e

=-

TF^E

10

^^
T\
^1

IMITS

SPBAGU

^mii

,z

g0.7

+f~~^

90 %

-W

^^

loh-

35V
':'

'

n4-

"|."

1.0

mi

SHiU'^lr
-

"^ ^
^-v

SPRAGUt 3IZZ04
\l

...

III

it

J4-

1.2

1-

ohms

Supply voltage

if~^

"Hi

p-M-

in
CAPUiT*NCE-C,-a CMOFMIi

FOR SCR FIRING

Vkilmin. VS. C,

VBB - 25 VOLTS
7-0.68

\
S.

BASE

A- -TRIGG ER AT

u.

- TV 0

\J "^4-4-.
1

+ TRIGGER AT EMITT

V0B1 CHARACTERISTICS

,J

REFERENCES:
1.

"Notes on the Application of the Silicon Unijunction Transistor," 90.10.

<>-

*t

-44

*; *

it ft:

'

t.

>vr^;3*-"

"jjp

"a

2.

"General Electric Controlled Rectifier Manual,"

Fifth Edition.

MINIMUM TRtOGfR AMPUTtfW AS

A FUNCTION OF TRIGGER PWSE WIDTH
*R TURN-&N Of WT TRANHSTORS
303

Silicon Unijunction

Transistors

2N490C.2C.4C

Electric Silicon Unijunction Transistor is a three terminal device having a stable "N" type
negative resistance characteristic over a wide temperature range. These devices have a stable peak point
voltage, a low peak point current, and a low emitter reverse current making them useful in timing and sensing circuits. They are intended for applicatins where a low emitter leakage current (high input impedance)
and a low peak point emitter current (sensitive trigger current) are required (i.e., level sensing and long
time delay applications), and also for triggering Silicon Controlled Rectifiers or other pulse sensitive cir-

The General

cuitry.

Revisions included

of adding the

in this issue consist

verse Current parameter, ] EX

is

now shown

2N490C and 2N492C.

Secondly, the Emitter Re-

for the first time.

See 2N489-94 specification sheet 60.10 for detailed curves.

absolute

maximum

ratings:

(25C)*
mm

Voltages

60
65

Emitter Reverse
Interbase

This zone

I:

matic handling.

volts
volts

is

controlled for auto-

The variation

in

actual

diameter within this zone shall not exceed

.010.

.Off 2: Measured from max. diameter

Current

RMS

70
2

Emitter
Peak Emitter

ma

the actual device.

amperesf

HOTf
plies

in

the zone between .050 and .250

maximum

600

of

3: The specified lead diameter ap-

Irom the base seat

Power
Dissipation

of

Between .250 and

of .021 diameter

these zones the

is

1.5

held. Outside

lead diameter is not

controlled.

Temperatures

-65 to
-65 to

Operating
Storage

+175
+175

C
C

10 zxfd or less, 30 volts or less.

f Capacitor discharge
** Derate 3.9 mw/C increase in ambient temperature.
power dissipation (available power to Emitter and
must be limited by the external circuitry.

The

45"

total

Base-Two)

/-. 031

xv

EMITTER.

003

.E

BASE ONE B
BASE TWO B2

GOLD LEADS

.029 (NOTE 2)

017 -.001

(NOTE 3

electrical characteristics:

(25C)

2N490C 2N492C 2N494C

MAX.

MIN.
Intrinsic

Standoff Ratio

(Vbb

10V)

= 3V, Ie = 0)
(Vbb = 10V, Ie = 50 ma)
Modulated Interbase Current (Vbb = 10V, Ie = 50 ma)
Emitter Reverse Current (Vbse = 30V, Ibi = 0)
Emitter Reverse Current (Vbb = 25V, Vebi = Vr .3V)
Peak Point Emitter Current (Vbb = 25V)
Valley Point Current (Vbb = 20V, Rb = 100fi)
Interbase Resistance

Rbbo

(Vbb

SCR

is

measured

firing circuits

in

6.2

(Fig. 2)

6.8

Figure

1 below.

MIN.

.68

.62

MAX.
.75

9.1

6.2

9.1

volts

4.6

22

ma

22

6.8

0.02

0.02

0.02

0.05

0.05

0.05

fia

flSL

8.0

8.0

8.0

ma

3.0

3.0

3.0

volts

This specification

and other types of pulse

MAX.

4.3

22

6.8

Base-One Peak Pulse Voltage!

plitude for applications in

.56

9.1

6.2

Ve(sat)

Emitter Saturation Voltage

JThe base-one peak pulse voltage

.62

.51

MIN.

used to ensure a

is

minimum

circuits.

O+20V.5V

\
-

'

.--

r~.

\
\
SiOWs

\
I

\
\

Figure

Figure 2

304

pulse

am-

2N490C, 2C, 4C
Ipn

Rl

2.2K TO

IOOMEG
Rl

25K

SCR
(C9F, CI2F,

OR C40F)

NANOAMPERE SENSING CIRCUIT WITH

100 MEGOHM INPUT IMPEDANCE

PRECISION SOLID STATE TIME DELAY CIRCUIT

PRECISION SOLID STATE TIME DELAY CIRCUIT

Time delays from

a % volt negative pulse. This negative pulse

not critical but it should have a period that is less
than .02 (Rl x CI). This negative pulse causes the peak
point voltage (firing point voltage level required at the
emitter of the 2N494C) to drop slightly and if the voltage
level at CI is greater than this, the unijunction will fire
with the necessary I r supplied from CI. By use of this technique, this circuit has given time delays of about one hour
with 2000 megohms at Rl and 2 M f at CI. The low leakage
requirement for CI is easily obtained with a mylar capacitor.
R2 can be adjusted or selected for best stabilization of the
firing point over the required temperature range.

0.3 milliseconds to over three minutes is

possible with this circuit without using a tantalum or electrolytic capacitor. The timing interval is initiated by applying power to the circuit. At the end of the timing interval,
which is determined by the value of R1C1, the 2N494C fires
the controlled rectifier. This places the supply voltage
minus about one volt across the load. Load currents are
limited only by the rating of the controlled rectifier which
is from 1 ampere up to 25 amperes for the types
specified
in the circuit.
calibrated potentiometer could be used in
place of Rl to permit setting a predetermined time delay
after one initial calibration.

2N494C with
rate

The charging

resistor, Rl,

must be small enough

to

lm um ? ring current (Peak point

oxf^^
<JN494C plus the leakage current of the

supply

pulse transformer can be used in place of the 27 ohm rehave the timing circuit isolated
from the power switching (controlled rectifier) circuit
which, for instance, might be connected to the AC line.

current, I P ) of the
capacitor when the
emitter of the unijunction is biased at its peak point voltage. The 2N494C requires a minimum I P of 2.0 microamperes. This would place a limit of 3 megohms for Rl and
permit time delays of 6 seconds (CI
2 ^f, without using
the additional 2N491 relaxation oscillator.
The circuit as shown effectively reduces the minimum I P
requirement up to a 1000X by pulsing the upper base of the

sistor if it is necessary to

The input impedance of the 2N494C is greater than 1500

before it is fired. The maximum time delay that
can be achieved by this circuit is mainly dependent upon
the maximum values that can be obtained for Rl and CI

NANOAMPERE SENSING CIRCUIT WITH

megohms

consistent with the low leakage requirement.

lOO

The circuit shown may be used as a sensitive current detector or as a voltage detector having high input impedance. Rl is set so that the voltage at point (A) is
to
volts below the level that fires the 2N494C.
small input
current (I,) of only 40 nanoamperes will charge C2 and
raise the voltage at the emitter to the firing level. When
the 2N494C fires, both capacitors, CI and C2, are dis-

C2

(SCR), or other pulse

MEGOHM INPUT IMPEDANCE

sampling technique described above, however, permits a reduction in the external firing current (I,) by as much as
1000 times below I,.. By pulsing the upper base of the
2N494C with a 0.75 volt amplitude negative pulse the peak
point voltage (firing point voltage level required at the
emitter) will drop slightly and if the voltage level at C2 is
greater than this, the unijunction will fire with the necessary Ip supplied from C2. By use of this technique, the
2N494C has been fired with external input currents (I,)
as low as 1 nanoampere with a 2000 megohm resistor for R2.
The period of the 2N491 relaxation oscillation is not critical, but it should have a time constant of .02 or less than
that of the 2N494C.

charged through the 27 ohm resistor, which generates a

positive pulse with sufficient amplitude to trigger a controlled rectifier

is

sensitive circuitry.

kept small for faster firing response time and CI is

used to provide the pulse output energy. Rapid recovery is
obtained after the 2N494C fires since both capacitors are
charged through Rl. This configuration has the advantage
that the leakage current of the silicon diode effectively subtracts from the leakage current of the unijunction and thus
providing some temperature compensation.
The input current available (I,) through the 100 MQ resistor will be much lower than the minimum firing current
of the 2N494C (peak point current (I P ) = 2.0 pa.) Use of a
is

A floating power supply for this sensing circuit using a

zener diode will permit grounding one of the sensing input
terminals if this is desirable. Rl should be adjusted so the
circuit will not fire at the maximum ambient temperature
in the absence of the current or voltage sensing signal. R3
can be adjusted or selected for best stabilization of the
firing point over the required temperature range.

305

2N681-92

SCR

of Silicon Controlled Rectifiers are reverse blocking tnode thyristor

semiconductor devices for use in medium power switching and phase control applications requiring blocking voltages up to 800 volts, and average load currents (single-phase, 180 conduction angle) up to 16

The 2N681 through 2N692 Series

amperes.

General Electric's C35 SCR and CI 37

required for a device of this size.

SCR

are

recommended where

a higher level of performance

is

OUTLINE DRAWING
(COMPLIES WITH JEOEC TO-48)

(COMPLIES WITH JEDEC TO-48)

1957,

Handbook

MAXIMUM ALLOWABLE RATINGS

TYPE

PEAK FORWARD BLOCKING

VOLTAGE, Vfom
To

= -65C + 125C
Volts*
Volts*
Volts*
Volts*
200 Volts*
250 Volts*
300 Volts*
400 Volts*
500 Volts*
600 Volts*
700 Volts*
800 Volts*

2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692

25
50
100
150

PEAK FORWARD VOLTAGE,

PFV U)
Tc

= -65C + I25C
35 Volts
75 Volts
150 Volts
225 Volts
300 Volts
350 Volts
400 Volts
500 Volts
600 Volts
720 Volts
840 Volts
960 Volts

REPETITIVE PEAK REVERSE

VOLTAGE, Vrm
Tc

NON-REPETITIVE PEAK REVERSE

VOLTAGE

(rep)*

= -65C + 125C

Vrom
Tc

MILLISEC),

(non-rep)

a>

= -65C + 125C
35 Volts*
75 Volts*
150 Volts*
225 Volts*
300 Volts*
350 Volts*
400 Volts*
500 Volts*
600 Volts*
720 Volts*
840 Volts*
960 Volts*

Volts*
Volts*
Volts*
Volts*
Volts*
250 Volts*
300 Volts*
400 Volts*
500 Volts*
600 Volts*
700 Volts*
800 Volts*

25
50
100
150
200

''Values apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which
Veom ratings apply equals 11 C per watt.
Cells with higher PFV ratings are available upon request.

maximum Vfom and

!,

25 amperes (all conduction angles)

Depends on conduction angle (see Charts 3, 5 and 7)
10 amperes per microsecond
150 amperes*
2 seconds (for times
milliseconds)
=1.5
75 ampere

RMS

Forward Current, On-State

Average Forward Current, On-State
Rate of Rise of Forward Current, On-State, di/dt
Peak One-cycle Surge Forward Current, I PM (surge)

Pt (for fusing)
Peak Gate Power Dissipation, P GM
Average Gate Power Dissipation, P G (AY)
Peak Forward Gate Current, I G fm
*
Peak Forward Gate Voltage, V GF m
Peak Reverse Gate Voltage, V GK m

5 watts*
0.5

'

-65C
-65C

Storage Temperature, T stg

Operating Temperature, Tj
Stud Torque
'Indicates Data included on

JEDEC type number

watt*

2 amperes*
10 volts*
5 volts*
to
to

+150C*
+125C*

30 lb-in (35 kg-cm)

registration.

306

"NOT TO EXCEED GATE POWER RATINGS

CHARACTERISTICS
2N681-92
TEST

SYMBOL

PEAK REVERSE OR
FORWARD BLOCKING
CURRENTf

MIN.

UNITS

Ihxcav)

mA

or

= +65C, Io = 16A
Vexm = Vfxm = 25V Peak
= 50V
= 100V
= 150V
= 200V
= 250V
= 300V
= 400V
= 500V
600V
= 700V
= 800V
Tc - +25C, V rx = 12Vdc, R L = 50 ohms
Tc = -65C, Vfx = 12Vdc, R L = 50 ohms
Tc = -65C to +125C, V F x = 12Vdc, R L = 50 ohms
Tc = +125C, Vf xm = Rated Vfom, Rl = 1000 ohms
Tc = +25C, Ifm = 50A Peak, 1 mlilisecond wide pulse
Tc

Ifxiav)

2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692

180 Conduction Angle

6.5*
6.5*
6.5*
6.5*
6.0*
5.5*
5.0*
4.0*
3.0*
2.5*
2.25*
2.0*

GATE TRIGGER CURRENT

mAdc
mAdc

40
80*

GATE TRIGGER VOLTAGE

Vgt

Vdc
Vdc

3.0*

0.25*

PEAK ON-VOLTAGE
EFFECTIVE THERMAL
RESISTANCE (DC)

!^

PP

VF^nd V

= -65C to +125C
Vhom = Vfom = 25V Peak
= 50V
= 100V
= 150V
= 200V
= 250V
= 300V
= 400V
= 500V
= 600V
= 700V
= 800V
T

13.0
13.0
13.0
13.0
12.0
11.0
10.0
8.0
6.0
5.0
4.5
4.0

FULL CYCLE AVG.

REVERSE OR FORWARD
BLOCKING CURRENTf

TEST CONDITIONS

mA

Irom
or
Ifom

2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692

MAX.

2.0

1.7

C/watt

nly
-

indicates data included on

JEDEC

MaX

Um

CaSe t0

amWent thermal

reslst

" -hi^ maximum

type number registration.

900
800

700

500

400

JUNC HON

TEMP ERATl RE- 25C

>5"C-

tiff
I ZOO

JUNCTION

/f

i50

25"C

TEMPERATURE - I25C

IOO

90
80
70

50

40

1
1

/
f

'
1

INCREASES TO FORWARD
BREAKOVER VOLTAGE

0.5

1.0

1.5

2.0

IO

INSTANTANEOUS ON-VOLTAGE VOLTS

INSTANTANEOUS ON-VOLTAGE -VOLTS

1.

MAXIMUM FORWARD CHARACTERISTICSON-STATE

2.

307

MAXIMUM FORWARD CHARACTERISTICSHIGH CURRENT LEVEL ON-STATE

2N681-92
i

NOTES:

RESISTIVE

1)

(2)

INDUCTIVE LOAD,

RATINGS DERIVED FOR 0.5 WATT

AVERAGE GATE POWER DISSIPATION.

(3) llC
(4)

OR

NOTES:

(2)
(3)

PER WATT MAXIMUM THERMAL

RESISTANCE. CASE TO AMBIENT.

CURVES APPLY FOR ANODE CURRENT

RATE OF RISE

10

(I)

FREQUENCY, 50 TO 400

Hz.

JUNCTION TEMPERATURE =I25C.

CURVES APPLY FOR ANODE CURRENT RATE
OF RISE .10 AMPERES PER MICROSECOND MAX.

AMPERES PER

ioo
ANGLE

30
0

60

180

12 0

CONDUCTION

180

ANGLE
DC

20

20

16

12

12

16

20

24

AVERAGE FORWARD CURRENT - AMPERES

24

AVERAGE FORWARD CURRENT-AMPERES

3.

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

4.

FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

I
1

NOTES!

(1)

(3)
(4)

FREQUENCY, 50 TO 400

Hz.

GATE POWER DISSIPATION.

ITC PER WATT MAXIMUM THERMAL RESISTANCE,
CASE TO AMBIENT.
CURVES APPLY FOR ANODE CURRENT RATE OF
= 10 AMPERES PER MICROSECOND MAXIMUM.

^^R|SE

DUTY CYCLE = 8.3%

16.7%
33.3S'v

50%|

5.

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

-H
m

%c UTY

T
C

YCLE

_(t)

100)

AVERAGE FORWARD CURRENT-AMPERES

50%.

notes:
(1) FREQUENCY, 50 TO 400 Hz.
(2) JUNCTION TEMPERATURE- I25C.
(3)

CURVES APPLY FOR ANODE CURRENT

RATE OF RISE -10 AMPERES PER
MICROSECOND MAXIMUM.
25%

33.3%

P
DUTY CYCLE-8.34

6.

FORWARD POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

l
-

*
T

/.DUTY CYCLE-

^^

AVERAGE FORWARD CURRENT -AMPERES

308

2N681-92

FIN SIZE

16
NC TtS:

(1)

(2)

5" X5'\

RESISTIVE OR INDUCTIVE LOAD, 50 TO

MIN GATE CURRENT REQUIRED

TRIGGER ALL UNITS AT:

400 Hi

FREE CONVECTION COOLING

CURVES SHOWN ARE FOR ISO' CONDUCTION ANGLE
FOR OTHER CONDUCTION ANGLES, MULTIPLY CURRENT
VALUES BY FOLLOWING FACTORS:
I20-09I
90" -0.82

+25C
14

65"C

G0-0.72
4" (4"v

USE CURVES FOR DC.H,

St
(4)

3") 3

CHART 3 CURVES ARE

MIN GATE VOLTAGE

REQUIRED TO
TRIGGER ALL UNITS

DC - I.40
BY CHOOSING

3*, 6* CIRCUITS

LIMITING.

ALL FINS I/I6" THICK COPPER WITH EMISSIVITY = 90%

STUD MOUNTED DIRECTLY TO COPPER FIN, MINIMUM
FIN SPACING - 3/4".

"nI

MAX GATE VOLTAGE

THAT WILL NOT TRIG-

GER ANY UNITS AT

I25C

0.25 V

INSTANTANEOUS GATE CURRENT- m

ALLOWABLE^ ^ NOTES: (I) CASE TEMPERATURE

-SS^C TO + I25C.
\, 1- (2) SHADED AREAS REPREt
SENT LOCUS OF POSSIBLE
TRIGGERING POINTS FROM
n.
WATTS

MAX

AMBIENT TEMPERATURE-

- 4

7.

INSTANTANEOUS
GATE POWER
_
DISSIPATION =5.0

Jw -65C TO + I25C.

MAXIMUM FORWARD CURRENT

VS. AMBIENT TEMPERATURE

FOR VARIOUS FIN SIZES

0.4

0.8

1.2

1.6

2.0

INSTANTANEOUS GATE CURRENT -AMPERES

8.

GATE TRIGGERING CHARACTERISTICS

NOTE: JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO SURSE-65"C TO +I25"C

80

o 60

jf| 40

^
CYCLES AT 60 Hz

9.

MAXIMUM ALLOWABLE NON-RECURRENT PEAK SURGE

FORWARD CURRENT AT RATED LOAD CONDITIONS

10.

MAXIMUM TRANSIENT THERMAL IMPEDANCEJUNCTION TO CASE

309

2N706 SEE GES706

2N877-81

SCR

2N885-89

FEATURES:
Proved

All-diffused for

Miniature Package TO- 18

Two Ranges
2N877-881
2N885-889

of

Gate

Reliability

Sensitivity:

200 ua max.
20ua max.

Low Holding Current:

2N877-881
2N885-889

OUTLINE DRAWING

5 ma. max.
3 ma. mas.

Voltage Ratings up to 200 volts

Designed

for Military Applications

AU. DIMENSIONS
INCHES.

CONFORMS TO
JEDEC TO -8 PACKAGE.

MAXIMUM ALLOWABLE RATINGS

PEAK FORWARD BLOCKING
VOLTAGE, Vfxm,
Tj = 65Co +125C.

TYPES

R, iK

= 1000 OHMS MAXIMUM.

WORKING AND

REPETITIVE

PEAK REVERSE VOLTAGE,

Vbom (wkg) and Vrom (rep).
Tj = 65C to 4-150C

NON-REPETITIVE PEAK
REVERSE VOLTAGE,
S Millisecond*.
Vko* (non-rep)

<

T,

= -65C to +125'C

2N877, 2N885

30 volts

30 volts

45 volts

2N878, 2N886

60 volts

60 volts

90 volts

2N879, 2N887

100 volts

100 volts

130 volts

2N880, 2N888

150 volts

150 volts

200 volts

2N881, 2N889

200 volts

200 volts

275 volts

Peak Forward Voltage,

PFV

_300 Volts
.

RMS Forward Current, On-state_

0.5

Depends on conduction angle

Average Forward Current, On-state-

Peak One Cycle Surge Forward Current (Non-repetitive), I FM (surge)

Average Forward Gate Power Dissipation, P g <av)

Storage Temperature,

Operating Temperature

(see charts 2, 3, 11

& 12)

Amperes

__0.1 Watt

Peak Forward Gate Power Dissipation, P G m

Peak Gate Voltage, Forward and Reverse,

Ampere

_0.01

V G fm and V GRM -

Watt

6 Volts

-65Cto-T-150C

S, K

-65C to +150C
310

CHARACTERISTICS
TEST

SYMBOL

FORWARD BLOCKING
CURRENT

Ikx

MIN.

REVERSE BLOCKING
CURRENT

REVERSE GATE CURRENT

PEAK ON-VOLTAGE

I'

KM

HOLDING CURRENT

10

Tj

100

Tj

0.03

Tj

10

20

0.1

10

10

100

0.1

Rated

V,-j, R.;k

1000

ohms

= +25C
= +125C
= +25C
= +125C
= Rated V,,

T,r

Vx

(rep)

= + 25C
= +.125C
T., = +25C
T., = +125C
V,. = 2 Volts, Tj =
Tj = +25C,
=1
T.,

T.,

20

10

Vj

10

iuAdc

2N877-2N881

CONDITIONS

TEST

0.03

Ikx

2N885-2N889

UNITS

/iAdc

2N877-2N881

2N885-2N889

MAX.

TYP.

10

/jAde

1.3

1.9

volts

mAdc

Ihx

I ,-

+25C.

Ampere,

single half sine

wave

2.0 milliseconds

wide max.

= +25C, R, iK = 24 Volts dc.

T.i

pulse,

1000 ohms,

V,-s

2N877-2N881
2N885-2N889

RATE OF RISE OF APPLIED

FORWARD VOLTAGE
TURN-ON TIME
(Delay Time + Rise Time)

dv/dt

0.4

1.7

5.0

0.4

1.1

3.0

40

t,i+t.

1.0

volts/

Tj

/isec

Vjx

Msec

Tj
Ikm

+125C, R,;k = 1000 ohms,

= Rated Vjx

= +25C, Vkx
= 1 Ampere,

-.=

Rated

V F ,

Gate Supply: 6 Volts, 300 ohms

CIRCUIT

COMMUTATED

TURN-OFF TIME
All

,usec

Types

= +125C, Rk = 1000 ohms,

= 1 Ampere, In (recovery) = 1 Ampere
Reapplied Vkxm = Rated,
lj

15

Tj

Rate of Rise of Reapplied

Forward Blocking Voltage

GATE TRIGGER CURRENT

^Adc

I,;t

2N877-2N881

2N885-2N889

GATE TRIGGER VOLTAGE

40

200

10

20

Vt

Vdc

2N877-2N881

0.4

0.5

0.8

2N885-2N889

0.44

0.5

0.6

Types

0.05

All

NOTES

//

= 20 V/^sec
= 6 Vdc, R,; K = 1000 ohms,
Ri, = 100 ohms maximum.
T., = +25C
Tj = +25C
Vkx = 6 Vdc, R,.k - 1000 ohms,
Ri. = 100 ohms maximum.
Tj = +25C
T., = +25C
Vkx = Rated Vkxm, R,.k = 1000 ohms,
Tj = + 125C
Vfx

(1)

CASE TEMPERATURE MEASURED AT THE TAB.

(3)

RATINGS DERIVED

FOR O.OI WATT

ZL
w
K

\^

/I

i
s
u

01

it

^^^

O*

1_
ION TEMPERATURE* I29*C -

'

60*

90*

180*

k^j

360*

Ti

20"

'

NOTE

ON-Vt LTAGE MEASURED

ATA >OMT ON THE LEADS

I/?

~-

m CH FROM THE

CASE.

O.Z
ERF*
BREAKOVER

ro

0.4

VOLTAGE

2.

MAXIMUM ALLOWABLE CASE TEMPERATURE

'

INSTANTANEOUS ON - VOLTAGE VOLTS

-

1.

0.3

AVERAGE FORWARD CURRENT -AMPERES

FOl

MAXIMUM FORWARD

CHARACTERISTICS, ON-STATE

311

(125C JUNCTION TEMP.)

2N877-81

2N885-89

140

NOTES:

k
^ S^*

-i

(I)

CELL LEAC MOUNTED FREE

CONVECTION COOLING.

(2)

RESISTIVE OR INDUCTIVE LOAD,

50 TO 400 CPS.
RATING DERIVED FOR 0.01 WATT

(2)

AVERAGE GATE POWER.

(3)

(3)

^^ s
\^
N
v^
\ \i

r
r
SHADED AREA REPRESENTS THE LOCUS
1

NOTES:

(1)

OF POSSIBLE TRIGGERING POINTS

FROM -65"C TO + I25"C.
6 VOLTS DC ANODE SUPPLY VOLTAGE.

I0OO OHMS
GATE SUPPLY IMPEDANCE
LOOKING INTO SUPPLY FROM TEST UNIT
TERMINALS. GATE CURRENT SHOWN DOES
NOT INCLUDE ANY CURRENT REQUIRED BY
EXTERNAL SHUNT RESISTANCE.

80

80"

0*

vV S^\\ \ ^
\
5L
\n V \

V -CONDUCTION ANGLE
1

0.9

IjSO"

"

nnr>i\

0.8

iX

0.2

0.1

0.7

0.4

0.3

AVERAGE FORWARD CURRENT

3.

MINIMUM GATE CURRENT REQUIRED

TO TRIGGER ALL UNITS AT

360"

AMPERES

0.6

0.5

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

(125C JUNCTION TEMP.)

0.4

03

y
/

0.7

DC

MAXIMUM GATE
VOLTAGE THAT
WILL NOT TRIGGER
ANY UNITS AT

0.2
0.1

i/

H25"C

to X

0.3

30'

60

40

20

J
80

IO0

MICROAMPERES

GATE TRIGGERING CHARACTERISTICS (2N885-2N889)

120*./

60*

-20

INSTANTANEOUS GATE CURRENT

180*

-40

-60

//^

">

ISO*

\-

CONDUCTION ANGLE
1

0.4

0.3

0.2

0.1

360"

AVERAGE FORWARD CURRENT - AMPERES

4.

FORWARD POWER DISSIPATION

T
(1)

SHADED AREA REPRESENTS THE LOCUS

OF POSSIBLE TRIGGERING POINTS
FR0M-65"C T0+I25"C.
6 VOLTS DC ANODE SUPPLY VOLTAGE.
GATE SUPPLY IMPEDANCE 1000 OHMS
LOOKING INTO SUPPLY FROM TEST UNIT
TERMINALS. GATE CURRENT SHOWN DOES
NOT INCLUDE ANY CURRENT REQUIRED
BY EXTERNAL SHUNT RESISTANCE.
|

(2)
(3)

08
0.7

-75

06

-50

-25

25

50

75

100

125

JUNCTION TEMPERATURE - "C

7.

MAXIMUM GATE

VOLTAGE THAT
WILL NOT TRIGGER
ANY UNITS AT
+I25"C
I

-ICO

100

200

INSTANTANEOUS GATE CURRENT

S.

300
-

400

500

MICROAMPERES

GATE TRIGGERING CHARACTERISTICS (2N877-2N881)

312

HOLDING CURRENT AS A FUNCTION OF

JUNCTION TEMPERATURE (2N877-2N881)

150

2IM877-81

2N885-89

10

R0

^>s*
~~JE.
1.0

^
V

S^ "*
N OTES:
100
1.

GA1 E
2.

OHM RE SIS TOR

F ROM

TO CATHO 3E.

OP! N CIRICUIT A NODE

VO LTAGE
V 3LTS.

SUPPL

24

w>CYCLES
9.

-50

-25

25

50

75

I00

40

60

MAXIMUM ALLOWABLE NON-RECURRENT SURGE CURRENT

1-It
-75

6
8 10
AT 60 CPS

AT RATED LOAD CONDITIONS

I25

JUNCTION TEMPERATURE -C
8.

HOLDING CURRENT AS A FUNCTION OF

JUNCTION TEMPERATURE (2N88S-2N889)

NOTES

Ill

(3)

600

50 TO 400 CPS.
RATINGS DERIVED FOR

,_

l
\i

,rS
>

40

CA SE TEMPERATURE
ME ASURED AT THE TA 3.

0-

10

30'
0.1

^\
T \ r^

90-

60

liaXj

0.2

11.
1

TIME

10.

ANGLE

80 '

\pc

0.3

AVERAGE FORWARD CURRENT

1

360-

ISO"

?0

3.C

WAT!

100

100

C OOI

0.01

AVERAGE GATE POWER.

JUNC1noN TO AMBIE NT.

FREE CO
TION COOLI IS,
NO E) TEF N \L HEAT SINK.

200

CELL LEADED MOUNTED, -REE

CONVECTION COOLING.

AMPERES

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

(150C JUNCTION TEMP.)

SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

Charts 11 and 12 apply to latching applications where SCR need

not block forward voltage after being turned on, since the V FXM
rating does not apply above 125C junction temperature. SCR
will again block rated forward voltage after junction temperature
drops below 125C.

0.1

0.2

12.

04

0.3

AVERAGE FORWARD CURRENT

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

<150C JUNCTION TEMP.)

313

2N1 595-99

SCR

2N929 SEE GES929

2N930 SEE GES930

The 2N1595 series of Silicon Controlled Rectifiers are planar-passivated, all-diffused,

three junction, reverse blocking triode thyristors for low power switching and control applications. The 2N2322 series, which is also available, offers additional

maximum specified electrical parameters.

Painted external surface for maximum heat dissipation
Single-ended package, ideal for printed circuit applications
All-welded construction
All-diffused, planar passivated
Glass-to-metal seals

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK

PEAK POSITIVE

OFF-STATE VOLTAGE,

ANODE VOLTAGE

v RM (i)

TYPE

PFV
Tc

2N1595
2N1596
2N1597
2N1598
2N1599
(1) Applies for 1000

RMS

50
100
200
300
400

I Tn{MS

Average On-State Current,

IT

500
500
500
500
500

Volts
Volts *
Volts*

VjtRM

Volts
Volts
Volts
Volts
Volts

50
100
200
300
400

Volts

Volts*
*
Volts
Volts*
Volts*

1-6
,

Amperes (all conduction angles)

Depends on conduction angle
(see Charts

Peak One-Cycle Surge (Non-rep) On-State Current, I TSM

Peak Gate Power Dissipation, P GM
Average Gate Power Dissipation, Pgiav)
Peak Positive Gate Current, I GM
Peak Positive Gate Voltage, V GM
Peak Negative Gate Voltage, V, JM
Storage Temperature,

T STO

5 and 6)
Amperes*
15
0.1 Watts
0.01 Watts
0.1 Amperes

3, 4,

6 Volts

_6
-65C
-65C

Operating Temperature, Tj
* Indicates data included in

gate-to-cathode.

AV

PEAK

= -6SCto +125C

Volts*
Volts*

ohms maximum, connected

On-State Current,

REPETITIVE

REVERSE VOLTAGE,

JEDEC type number registration.

314

to

to

Volts

+150C*
+150C

OUTLINE DRAWING
(Conforms to JEDEC TO-5 Package Outline)
,260
.240

2N 1595-99

1.500
MIN.

100 MIN.

(NOTE

ANODE LEAD
(GROUNDED
TO HOUSING)

I)

.017 DIA.

OHMS

12

.370
.360

'GS

2x

.200

TRUE

DIA.

,335

325

GATE

SUPPLY

6V
1000

Vre
6S

OHMS

-3 LEADS
+ 00Z
017

(NOTE
NOTE 1: THIS ZONE IS CONTROLLED FOR AUTOMATIC HANDLING THE VARIATION IN ACTUAL
DIAMETER WITHIN THIS ZONE SHALL NOT
EXCEED .010

3)

NOTE

3: THE SPECIFIED LEAD DIAMETER APPLIES

IN THE ZONE BETWEEN .050 AND 250 FROM
THE BASE SEAT BETWEEN 250 AVD 1 5 MAXIMUM OF 021 DIAMETER IS HELD OUTSIDE OF
THESE ZONES THE LEAD DIAMETER IS NOT
CONTROLLED LEADS MAY BE INSERTED WITHOUT
DAMAGE. IN 031 HOLES WHILE DEVICE ENTERS

NOTE 2: MEASURED FROM MAX. DIAMETER OF

THE ACTUAL DEVICE.

371

HOLE CONCENTRIC WITH LEAD HOLE CIRCLE.

APROX WEIGHT. 05 OZ
ALL DIMENSIONS IN INCHES

SYMBOL

TEST

Peak Off-State
and
Reverse Current
D.C. Gate Trigger

MIN.

MAX.

TYP.

UNITS

Idrm

(LlA

&

IniiM

T
MIS

lU

CONDITIONS

TEST

Vdhji

Vhiui

volts peak,

RG k =

6 Vdc,

R -

12

ohms

6 Vdc,

RL =

12

ohms

= Rated

1000 ohms.
2.0

T c = +25C
T r = +125C

10

100

1000*

0.9

10*

mAdc

T = +25C, Vu =
,

r.

Current
D.C. Gate Trigger
Voltage

v GT

0.6

3.0*

Vdc

Peak On-State
Voltage

"TM

1.25

2.0*

Volts

Tc

= +25C,

T c = +25C,
wide

Holding Current

III

Circuit

tq

1.0

mAdc

40

/xsec

Commutated
Turn-Off Time

pulse.

V,,

I TM

=
=

Duty

1.0

A peak,

cycle

msec,

^2%.

T = +25C, Anode Source Voltage =

Vdc, R GK = 1000 ohms.

12

T c = + 125C, I TM = 1.0 A peak.

Rectangular current pulse, 50 ,usec duration.
Rate of rise of current < lOA/^sec.
Commutation rate 5S 5 A//tsec.
Peak reverse voltage = Rated V RRM
max.

volts

Reverse voltage at end of turn-off time

interval 15 volts.
Repetition rate = 60 pps.
Rate of rise of re-applied off-state voltage
(dv/dt) = 20V/ M sec.
Off-state voltage = Rated V D rm volts.
Gate bias during turn-off time interval =
volts, 100 ohms.

Turn-On
Time

t,.

1.2

jusec

T = +25C, V n = Rated V, 1RM value.

= 1.0 A.
Gate trigger pulse - 6 volts, 300 ohms,

Itm

wide, 0.1 ^sec rise time.

Gate bias = volts, 300 ohms.
jusec

* Indicates data included in

NOTE

I GS is

denned

JEDEC type number registration.

in the circuit

below

3^5

2N 1595-99

JUNCTION

TEMPERATURE
I25C

,<.
<s

/
50

GATE TO CATHODE.

in

U- UJ

25C

O UJ

bu

j
0.1

\\

>s

20

UJOC

10

a.

NOTE. VOLTAGE

MEASURED AT POINT
ON LEADS 1/2 INCH
FROM BOTTOM OF

I25C____

CASE.

25C

l^~

0.01

80
60
70
30
40
50
20
INSTANTANEOUS APPLIED VOLTAGE (PER CENT OF RATED VOLTAGE)

100

10

2.

TYPICAL OFF-STATE

AND

REVERSE BLOCKING CHARACTERISTICS

\
s.
INCREASES TO
BREAKOVER VOLTAGE
V WITH
ZERO GATE SIGNAL

0.001

4.0

3.0

2.0

1.0

INSTANTANEOUS ON -STATE
VOLTAGE -VOLTS
1.

TYPICAL ON-STATE CHARACTERISTICS

NOTES

(1)

(2)

130
120

no
100

(3)

^
\^
^
\

90

RESISTIVE OR INDUCTIVE
LOAD, 50 TO 400 Hi.
RATINGS DERIVED FOR 0.01
WATT AVERAGE GATE POWER
125 "C JUNCTION TEMPERATURE

\
\

*>

30

-*

'V

S*b'
6C

'

>0

120

80

180*

CONDUCTION

100

90

(1)

80

RESISTIVE OR INDUCTIVE LOAD, 50 TO

400

S ^

DC

180"

70
:

"^

ANGLE

NOTE

^ ;\

70

Hi.

60

lR.

125' C JUNCTION TEMPERATURE.

w CASE TEMPERATURE MEASURED AT A POINT
CENTER OF THE BOTTOM OF THE CASE.

(3 )

50

40

IN

THE

\\

\
L_

O-L-^180

\N \\\
'$

\O o
CM

CD

AN< SLE
0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

02

0.3

0.4

0.5

AVERAGE ON-STATE CURRENT-AMPERES

1.6

AVERAGE ON-STATE CURRENT - AMPERES

MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE

4.

MAXIMUM ALLOWABLE CASE TEMPERATURE

(150C Junction Temp.)

(125C Junction Temp.)

316

2N 1595-99

Charts 5 and 6 apply to latching applications where SCR need not block
off-state voltage after being
turned on, since the V RU specification does not apply above + 125C junction
temperature. SCR will again
block rated off -state voltage after junction temperature drops below +
125C.

ISO
"l

u
K
^
2

140

%^

130
120

%
x^ ^ ?^
^ ^V
*

-v

no

u,

100

Of _

30*

IRO

S.

90

60

X
J

\C0NDUCTI0N
ANGLE

'

Q.

120'

180'

DC

t/i

90

5
m

80

70

ll

60

O
<
2

MOTES

50

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz.

VI KAIING5 utKIVED FOR O.OI WATT AVERAGE GATE POWER

(1)

TEMPERATURE.
CASE TEMPERATURE MEASURED AT A POINT
CENTER OF THE BOTTOM OF THF CASF
150 "C JUNCTION

(3)
(4)

_l

IN

THE

0.6
OS
1.0
1.2
1.4
AVERAGE ON-STATE CURRENT- AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

(125C Junction Temp.)

NOTE:

(1)

RESISTIVE OR INDUCTIVE LOAD, 50 TO

400
(2)

Li

3
<
5

'so

i-

120

z
UJ

Hz.

0.01 WATT
AVERAGE GATE POWER.
<3>I50"C JUNCTION TEMPERATURE.

(J

RATINGS DERIVED FOR

^ \
V

<

^8

3 90
S
3 80
-J
<

\>
\

<

/I
0'

30

V \\

I 60
X

r-|l80-

).

\\

CONDUCTION
ANGLE

\\
\ \;

\
b

ol

1*1

0.1

0.2

\ \ \
b b

O
GO

0.3

0.4

0.5

(J

Q
0.6

AVERAGE ON-STATE CURRENT-AMPERES

MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE

6.

(150C Junction Temp.)

317

Silicon Unijunction

Transistors

The General

Electric Silicon Unijunction Transistor is a three terminal device having a stable "N" type
negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak
point current, and a high pulse current rating make this device useful in oscillators, timing circuits,
trigger circuits and pulse generators where it can serve the purpose of two conventional silicon or ger-

manium

transistors.

The 2N1671

is intended for general purpose industrial applications where circuit economy is of primary
importance. The 2N1671A is intended for industrial use in firing circuits for Silicon Controlled Rectifiers
and other applications where a guaranteed minimum pulse amplitude is required. The 2NI671C is intended
for applications where a low emitter leakage current and a low peak emitter current (trigger current)

are required.

These transistors feature Fixed-Bed Construction and are hermetically sealed

are electrically isolated from the case.

in a

welded case. All leads

.370MAX_
360MIN
335 MAX
.325 MIN

absolute

maximum

ratings (25C)

NOTI

This zone

I:

matic handling.

is

controlled tor auto

The variation

in

actual

diameter within this zone shall not exceed

RMS
RMS

.010.

Power Dissipation

450

mw

WTI

J: Measured trom max. diameter

of

the actual device.

Emitter Current

50

Peak Emitter Current 2

ma

Hon
plies

30 volts
35 volts

the zone between .050 and .250

maximum
of

Interbase Voltage

in

from Ihe base seat.

amperes

Emitter Reverse Voltage

3: Ihe specified lead diameter ap

of .021

Between .250 and

diameter

these zones the

lead

is

1.5

held. Outside

diameter

is

not

controlled.

Operating Temperature Range

-65C

to

+140C

Storage Temperature Range

-65C

to

+150C
EMITTER
BASE ONE

Bl

[-GOLD LEADS

BASETW082J 017+ f
(

(25C)

electrical characteristics

NOTE 3

2N1671 2N1671A 2N1671B 2N1671C

PARAMETER

SYMBOL

Intrinsic Standoff Ratio (Vbb

10V) (Note 3)
Interbase Resistance (V BB = 3V, I E = 0) (Note 4)
Emitter Saturation Voltage (V BB = 10V, I K 50 ma)
Modulated Interbase Current (V BB = 10V, I E = 50 ma)
Emitter Reverse Current (Vb=e = 30V, I B = 0) (Fig. 6)
,

= 25V) (Fig. 8)
(Vbb = 20V, R B = 100O) (Fig. 9)

Peak Point Emitter Current (V BB

Valley Point Current

MIN. MAX.

MIN. MAX.

MIN. MAX.

0.47

0.62

0.47

0.62

0.47

0.62

0.47

0.62

R BB o
V K (SAT)

4.7

9.1

4.7

9.1

4.7

9.1

4.7

9.1

Ib,.(MOD)

6.8

5
6.8

22

5
6.8

12

0.2

Ip

25

25

(1)

Derate

3.9

MW/C

increase in ambient tem-

(Thermal resistance

=0.16C/MW.)

to

case

(2) Capacitor discharge

lO^fd or less, 30 volts or
Total interbase power dissipation must be
limited by external circuitry.
(3) The intrinsic standoff ratio, v, is essentially
constant with temperature and interbase voltage.
v is denned by the equation
less

V
Where

Vi

_i_

200

= Peak point emitter voltage

8
3.0

I KX

amplitude with temperature and circuit parameters

shown

in figures 12 to 15.

V BB =interbase

voltage
Tj ^Junction Temperature (Degrees

Kelvin)

318

Kf2
volts

22

ma

3.0

UNITS

.02

(4) The interbase resistance is nearly ohmic and

increases with temperature in a well defined manner as shown in figures 10 and 11. The temperature
coefficient at 25C is approximately O.S'/r lC
(5) The base-one peak pulse voltage is measured
in the circuit below. This specification on the
2N1671A is used to ensure a minimum pulse amplitude for applications in SCR firing circuits and
other types of pulse circuits. The variation of pulse
is

6.8

3.0

NOTES:
perature

22

12

VoB.

.3V) (Fig.3)

22

Iko

Iv

,>

Base-One Peak Pulse Voltage (Note 5)

Emitter Reverse Current (Vbi=25V,V KB i=:Vi

MIN. MAX.

fXSL

flSL

ma
volts

0.05

2IM1671, 1A, B,

B2

V E (SAT)

MICRO *MPfftE5

FIG.

FIG.

Unijunction

Transistor Symbol with Nomenclature used for voltage and currents.

FIG.

Emitter Characteristic curves show-

Static

important parameters and

ing

ment points (exaggerated

to

Static Emitter Characteristics at

Peak

Point.

measure-

show

details).

1
i

TA -55C

__.

TA =25'C

TA *I25C

14

\
>u

>
'in

sYbb" sov

VVgg -20V"

JB

"

<

,0V

BB'30

EMITTER

CURRENT

14

IE

16

18

20

MILUAMPERES

X B2

Static emitter characteristics for a typical

three different ambient temperatures.

>

2N1671 unijunction

transistor at

/
/

25C

MA

30MA

40MA

K/

//

25

f MOMA

40 MA

//

ff

> 30-

V
^&

/
t

BASE -TWO CURRENT-I B? -MILLIAMPERES

FIG.

BASE

10

12

14

16

16

TWO CURRENT- I--, -MILLIAMPERES

20

22

/,

y2

319

10

12

BASE TWO CURRENT-

a typical 2N1671 unijunction transistor

ambient temperatures.

Static inter base characteristics for

at three different

/ J
<

t-^

,40*AA
>OMA

'/

/ //
^2 ,y

30MA

71
/

/,

I25C

2 25-

//. "/y

20 MA

/
/

35-

/
30MAI
/

TA

,l E .o

40-

~T""

TA

I0MA
'

-55C

EMITTER CURRENT-Ig-MILLIAMPERES

Tfl

2C

EMITTER CURRENT-I-.- MILUAMPERES

FIG.

V-

\JB8-V^
i B2 =o

Hz'
12

\BB 30V

* db|"

10

\\

5
s

14

16

18

B2 -MILLIAMPERES

20

22

^
2N1671,1A, B,C

__

1000

V~90%

-k**

rr

T,
-*i

fen<sr
*
zH&
i&&

-'

'.'.

-it,
100

r^-

1:

"Bl

-'

V*"
'

,-

**-

^
10

TA = I25^C
-Z

V B2E = 30V

---

-IjA^S c

>

Tf

I0-3

40

20

80

60

MO

120

100

160

.01

FIG.
Emitter

FIG.

6
current

reverse

vs.

CAPACITANCE -C|

AMBIENT TEMPERATURE - TA -DEGREES CENTIGRADE

-MICROFARADS

Emitter voltage fall

temperature.

time

in

relaxation oscillator

T -55C

a 30

MAX
(limit

T A' 25"(-\

2
-

circuit.

v- 55

-J.

25C

.1

A
=

25 "C

t-

rr

\H

/^

>

SI FOR
,

125' C

z
o

LU

15

a.

'0

(2NI67IA

H
|i

Ul

FOR

o 20
?

f25"C

T.25"C\
A

capacitance

vs.

for a typical unit

and ambient temperature

lu

/
t

'

:5*C MINIMUM
_IMIT

FOR

ILL TYPES

As

<
2

INTERBASE

FIG.

5 6 7

10

15

/ t>

30 40

20

15

<>

VOLTAGE- V BB -VOLTS

INTERBASE

FIG.

Peak Point Emitter Current vs. interbase

voltage and ambient temperature for a

20
VOLTAGE

25

30

35

V-,

Valley Point Current

vs.

and ambient temperature

interbase voltage
for a typical unit.

typical unit.

B 3% LU ITS
k

IT IC FRE E
EMITTER OPEN

EAN

/A

"T

Al

cum:d
LIMITS

FOR

A"

't

L MITS FOR
T

'/>

s/

r
1

*"?
L MITS FOR

0.8

i
-60

-40

40
60
80
100
120
-20
20
O
JUNCTION TEMPERATURE -Tj -DEGREES CENTIGRADE

140

30

35

INTERBASE VOLTAGE VBe

FIG.
vs.

25

160

FIG. lO
Normalized interbase resistance

^S

JS --'

11

Limit values of static interbase characteriswith zero emitter current.

junc-

tics

tion temperature.

320

2N1671A - 2N1671B

2N1671,1A, B,C

GENERAL PURPOSE PULSE CIRCUITS

FOR SILICON CONTROLLED RECTIFIERS

AND

FIRING CIRCUITS
2NI67IA -2NI67IB
v = 20 VOLTS
BB

V)

3
P

1.3
1

TA

25C

2NI67IA-2NI67IB

SHADED AREA INDICATES

H e ,= ioon.

s>

_(

3
~*R

^^
J

<"

<
ss

III

R B I=20J1

V)
CL

B |- 50 n.

<
UJ
"

in

LU

o
1

^^"'~

*'

0.9

iu
(0

^^UH^-

V)

<

<
m
Q
UJ
N

0.8

? 7

a:

o
z

I
31

0.6

0. )2

25
CAPACITANCE -

C,

- MICROFARADS

AMBIENT TEMPERATURE -TA

100
-

FIG. 12

FIG. 13

Minimum base-one peak

Normalized base-one peak pulse voltage

and

pulse voltage vs. capacitance

base-one resistance in relaxation oscillator circuit.

in

relaxation oscillator

125

150

DEGREES CENTIGRADE

vs.

temperature

circuit.

2.6

2NI67IA-2NI67IB

2.4
2.2
2.0

1.8

1.6
1.4
1.2
1.0

0.8
0.6
0.4
or

o 02
z
10

15

20

30

25

35

40

INTERBASE VOLTAGE- DD -V0LTS

DD

FIG. 14

Normalized base-one peak pulse voltage

voltage

in

relaxation oscillator

vs.

interbase

circuit.
CAPACITANCE -C,- MICROFARADS

FIG. IS
Minimum supply voltage required

to fire

standard types

of silicon controlled rectifiers vs. capacitance

in

circuit

below.

Period of Relaxation Oscillator

t=0.80 RiCi ( 0.21 RiC,)

Maximum Value of Ri for oscillation

( 55C

to

+140C)
Ri (max) = 430 V! 2 (2N1671-2N1671A)
Ri (max)
1800 V, 2 (2N1671B)
t
Period in Seconds
Ci
Capacitance in Farads
Ri
Resistance in ohms
Vi
Supply voltage in volts

=
=
=
=

REFERENCES:
FIG. 16
1.

Basic unijunction transistor

controlled rectifiers.

firing

circuit

for

silicon

"Notes on the Application of the Silicon Unijunction Transistor," 90.10.

2.

"General Electric Controlled Rectifier Manual,"

Fifth Edition.

321

SERIES

C11

SCR

2N1770-78,

2N2619
2NI770A SERIES SEE PAGE 663

The CI

Silicon Controlled Rectifier

low power

in

volts

a three junction semiconductor device for use

and RMS load currents up to 7.4 amperes.

Broad Voltage Range (Up to 600V)

Long Electical Creepage Path

Over Three Years

is

switching and control applications requiring blocking voltages up to 600

No Gate

High Gate Sensitivity

Bias Required

of Successful Field Experience

INSULATING HARDWARE

COPPER TERMINAL, 016

THICK, TIN PLATED
WASHER..035 THICK

NICKEL PLATED
WASHERS, TWO, .625
00., .201 ID,.005 THICK
TEFLON WASHER..270 0.0.
.204 ID.,.050 THICK

SEE MOTES l2-

BRASS

MICA

"I

AVAILABLE UPON REQUEST

Voeo

.078^
DIA.

10-32 STEEL NUT

CADMIUM PLATED
LOCKWASHER,
PLATED

STEEL

C11U
C11F
C11A
C11G

(2N1770)
(2N1771)
(2N1772)
(2N1773)

CUB

(2.N1774)

C11H (2N1775)
C11C (2N1776)

CUD
CUE

CUM

25
50
100
150
200
250
300
400
500
600

(2N1777)
(2N1778)
(2N2619)

Tj

Maximum

case to

<
= 65Cto+125C

Voltage (Non-recurrent

25
50
100
150
200
250
300
400
500
600

Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*

{-Values apply for zero or negative gate voltage only.

Transient Peak Reverse

5 Millisec.lt

Peak Reverse
Voltage (PRV)f
65Cfo
.25C

Repetitive

Voltage (V B o)t
i25C
65C.o

Tj

COMPLETE THREADS FKTENO TO WITHIN Z-l/2 THREADS

OF HEAD
UNTHREADED PORTION ISO MAX
S. ANGULAR ORIENTATION OF THESE TERMINALS IS UNDEFINED
4 CASE IS ANODE CONNECTION.
3 ALL DIMENSKMS IN INCHES
I

Z DIAMETER OF

Minimum Forward Breakover

Type

CADMIUM

Tj

40 Volts*
75 Volts*
150 Volts*
225 Volts*
300 Volts*
350 Volts*
400 Volts*
500 Volts*
600 Volts*

Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*

720 Volts*

ambient thermal resistance for which

maximum PRV

ratings apply equals 18C/watt.

MAXIMUM ALLOWABLE RATINGS

Repetitive Peak

(CllUthruCllD)

Forward Blocking Voltage (PFV).

(CUE

RMS

Forward Current
Average Forward Current

CUM)

(All conduction angles)

480
720

Volts
Volts

7.4

Amperes

60C Case (Half Wave Rectified)

_4.7
For other operating conditions see Chart 3.

Amperes*

(!<>)-

Peak One Cycle Non-recurrent Surge Current (is.nm)

Peak Surge Current During Turn-on Time IntervalI 't

and

at

Amperes*

60

See Chart 7
Calculate from Chart 8

(for fusing)

Peak Gate Power (p, )

Average Gate Power (P< )
Peak Gate Current (i )
Peak Gate Voltage (v ) (Forward and Reverse)
Operating Temperature
Storage Temperature
Stud Torque

0.5

Watts*
Watt*

2.0

Amperes*

fi

Volts*
10
65 c Cto+125C*

(:

'Indicates data included on

"HOT TO EXCEED

JEDEC

GATE POHER RATINGS

type number registration.

322

65
15

Cto+150C*
inch-pounds

CHARACTERISTICS
Test

Symbol

Peak Reverse and Forward

Blocking Currentf
C11U (2N1770)
C11F (2N1771)
C11A (2N1772)
C11G (2N1773)
C11B (2N1774)
C11H (2N1775)
C11C (2N1776)
CUD (2N1777)
CUE (2N1778)
CUM (2N2619)
Full Cycle Avg. Reverse and
Forward Blocking Currentf

in

and

Min.

T YP-

C11 SERIES

Units

2N1770-78

Test Conditions

is

2N2619
4.5
4.5
4.5
4.0
3.0
2.5
1.5
1.0
1.0
1.0

ma
ma
ma
ma
ma
ma
ma
ma
ma
ma

9.0
9.0
9.0
8.0
6.0
5.0
4.0
2.0
2.0
2.0

125C, Gate Open

v,a = 25 Volts Peak
50
100
150
200
250
300
400
500
600

T, = 60C, I
4.7A, half sine
180 Conduction Angle

lit (A V)

and

wave

Is.AV,

C11U
C11F
C11A
C11G

(2N1770)
(2N1771)
(2N1772)
(2N1773)
CUB (2N1774)
C11H (2N1775)
C11C. (2N1776)
CUD (2N1777)
CUE (2N1778)
(2N2619)

CUM

Gate Current

Gate Voltage

to Fire

to Fire

V,;k

0.3*

Peak Forward Voltage Drop

mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc

4.5*
4.5*
4.5*
4.0*
3.0*
2.5*
2.0*
1.0*
1.0*
1.0*

2.3
2.3
2.3
2.0
1.5
1.3
0.8
0.5
0.5
0.5

10

15

20

30*

1.3

2.0*

Va,-

Va,-

Vdc

1.6

v, a

=
=

In
t,

tr

25 Volts Peak
50
100
150
200
250
300
400
500
600

1.85

12Vdc,

T.,

12Vdc,

T.,

pulse, 4

Holding Current
Turn-on Time

= 25C, R,. = 250 ohms

= -65C, R,. = 250 ohms
V,,12Vdc, T., = 125C, R,. = 250 ohms
Va.- = 12 Vdc, T., = -65 to+ 125C,
R,. = 250 ohms
Rated, T., = 125C, R,,
250 ohms
T.i 25C, if = 15 a (single sinusoidal
Va,

Vdc

0.7

8.0

mAdc

1.0

fisec

T.,

^sec

T.,

ms

wide)

Anode Supply

Vdc,

T.,

25C

25C, i F = 10 a, v A = Rated Gate

Supply: 7 volt open circuit, 20 ohm, 0.1
<-

Msec max. rise time.

Turn-off Time

15

125C,i F == 5 a, i = 5 a
(Reapplied) = Rated. Rate of Rise of
Reapplied Forward Blocking Voltage =
20 volts per microsecond maximum.

Va.-

Thermal Resistance

fValues apply for zero or negative gate voltage.

ratings apply = 18 C per watt.
*Indicates data included on

JEDEC

1.5

Maximum

3.1

case to

C/Watt

am bient

Junction to Case.

thermal resistance for which

maximum PRV

type number registration.

JUNCTION TEMPERATURE =25C-

+ 12 >c

a:
0.

//
JUNC TION

TEMPERATL
t25'C

7h

90
5'C

3 70

//

60

//

1
o

/
1

a.

/
/

/.

z
<

/.

//

INCREA SES TO BRE AKOVER

WITH Z ERO GftTE IGNAL

3LTAGE

VI

1
2

INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS

1.

MAXIMUM FORWARD

INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS

CHARACTERISTICS

2.

CONDUCTING STATE

MAXIMUM FORWARD

HIGH CURRENT LEVEL

323

CHARACTERISTICS

CONDUCTING

STATE

C11 SERIES
2IM 1770-78

2N2619
I80

I60

|40

s
120
a.

UJ

I00
Ll

<

_80

60*
9 P*

_i
OD

| 60

NOTE l-D-C.I0,3, 60 CIRCUITS; RESISTIVE

OR INDUCTIVE LOAD 50 TO 400 CPS
II

NOTE 2-RATINGS ARE DERIVED FOR 0.25 WATT GATE AVERAGE POWER
DISSIPATION. FOR HIGHER GATE DISSIPATION DECREASE STUD
TEMPERATURE AT RATE OF 3.IC PER WATT
I

i40

x
2 20 I-N0TE3-I

Il|

l/2"X

1/2" IS MINIMUM FIN.

SIZE FOR WHICH RATINGS APPLY

AVERAGE FORWARD CURRENT-AMPERES

3.

MAXIMUM ALLOWABLE CASE TEMPERATURE

12

AVERAGE FORWARD CURRENT- AMPERES

4.

FORWARD POWER

324

DISSIPATION

NOTES,

SU6GESTED COOLING FIN DESIGNS. FINAL DESIGN SHOULD BE

CHECKED TO ASSURE THAT CASE TEMPERATURE DOES NOT
EXCEED VALUE SPECIFIED IN CURVE 3.
(2) ALL FIN SIZES 1/16" THICK COPPER-FINS PAINTED, STUD
MOUNTED DIRECTLY TO FIN-MINIMUM FIN SPACING INCH
(3) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 CPS-FREE
CONVECTION COOLING.
(4) CURVES SHOWN ARE FOR 180" CONDUCTION ANGLE.
FOR
-OTHER CONDUCTION ANGLES, MULTIPLY CURRENT SCALE
SBY THE FOLLOWING FACTORS:
DC-1.40
(1!

l20-0.85
90 -0.70

20

10

5.

30

40

50
60
70
80
AMBIENT TEMPERATURE -"C

90

100

110

MAXIMUM FORWARD CURRENT

VS. AMBIENT
TEMPERATURE FOR VARIOUS FIN SIZES

65C TO +125 C

0.4

0.8

1.2

1.6

INSTANTANEOUS GATE CURRENT6.

FIRING CHARACTERISTICS

325

C11 SERIES

2N 1770-78
2N2619

C11 SERIES

2N 1770-78
2N2619

350

300
NOTES.

o
5
a.
o

CURRENT RISE TIME (10% TO 90%) LIMITED TO

(1)

(2)

250

(3)
(4)

"-co

2.5

GATE DRIVE: 7.0 VOLTS (OPEN CIRCUIT) 20 OHM SOURCE.

JUNCTION TEMPERATURE BEFORE SWITCHING - I25C
THIS CURVE MUST NOT BE USED FOR RECURRENT SWITCHING.
SEE APPLICATION NOTES FOR FURTHER INFORMATION.

200
UJbJ

yi
if:

<3
2
X
<

150

100

50

500

400

300

200

100

PEAK FORWARD BLOCKING VOLTAGE PRIOR TO SWITCHING -VOLTS

7.

PEAK NON-RECURRENT SURGE CURRENT

DURING TURN-ON TIME INTERVAL

60

-20 C TO-H25 C

50
CO

-65C TO -2( Pc
:

cc

CO
LlI

or

40

LlI

a.

<
I

30
LLl

or
or

o
20

NOTES: (0 FOR CALCULATING I2 t RATINGS

(2) JUNCTION TEMPERATURE
-65C TO + I25C

CD
or

3
CO
o
or

10

I
or
o
4
5 6 7 8.3
PULSE TIME -MILLISECONDS

1.5

1.0

8.

MAXIMUM ALLOWABLE NON-RECURRENT

SURGE CURRENT RATING

326

SUB-CYCLE

600

C11 SERIES

2N1770-78
CO
UJ
<r

2N2619

HI

< 80
NOTES:
cr
or

3
O
o

(I)

(2)

AT RATED LOAD CONDITIONS

JUNCTION TEMPERATURE PRIOR TO SURGE-65C T0+I25C

60

cc

40
UJ

I
uu

20

CO

<
X
5 6 7 8 9 10
CYCLES AT 60 CPS

<
UJ

20

40 50 60

30

Q.
9.

MAXIMUM ALLOWABLE NON-RECURRENT

SURGE CURRENT RATING

JUN CTION TO CASE

NOTE

CURVE DEFINES TEMP RISE OF JUNCTION /1ROUF

CASE FOR SINGLE LOAD PULSE OF DURATION
PEAK
ALLOWABLE DISSIPATION IN RECTIFIER FOR TIME t, F
STARTING FROM CASE TEMP, EQUALS I25C (MAX
t.

VlUtU BY THE
P
II

PEAK = I25

C - TC

'S'J-CU)

FOR

ENT ITLED "POWER SEMICONDUCTOR RATimr nuncc tdamcicmx

INTE RMITTENT LOADS"
i

OOI

.002

.005

Ol

.02

nun
.05

.2

.5

10

TIMEW-SECONDS
10.

ami-.

MAXIMUM TRANSIENT THERMAL

327

RESISTANCE

20

50

I00

2N1 842-50

SCR

SEE C52 SERIES

2N2023-31 SEE C60 SERIES

2N1792

Series of Silicon Controlled Rectifiers are reverse blocking triode

applicathyristor semiconductor devices for use in medium power switching and phase control
180
(single-phase,
tions requiring blocking voltages up to 500 volts, and average load currents
conduction angle) up to 10 amperes.

The 2N1842 through 2N1850

ratings
General Electric's types C35, C37 and CI 37 SCR's are recommended for higher voltage
size.
of
this
device
for
a
required
are
performance
of
levels
and where higher
Publication

Type

Number

160.20
160.23
160.45

C35
C37
C137

MAXIMUM ALLOWABLE RATINGS

TYPE

PEAK FORWARD BLOCKING

VOLTAGE, Vfom
Tc

= -40C +100C
25 Volts*
50 Volts*
100 Volts*
150 Volts*
200 Volts*
250 Volts*
300 Volts*
400 Volts*
500 Volts*

2N1842
2N1843
2N1844
2N1845
2N1846
2N1847
2N1848
2N1849
2N1850

PEAK FORWARD VOLTAGE,

PFV<

Tc

VOLTAGE, Vkom

'

= 40C +100C
35
75
150
225
300
350
400
500
600

Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts

REPETITIVE PEAK REVERSE

Tc

(rep)

0>

= -40C +100C
25
50
100
150
200
250
300
400
500

NON-REPETITIVE PEAK REVERSE

VOLTAGE (<5
Tc

= -40C + 100C
35 Volts*
75 Volts*
150 Volts*
225 Volts*
300 Volts*
350 Volts*
400 Volts*
500 Volts*
600 Volts*

Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*

which
"'Values apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for
Vhom ratings apply equals 11C per watt.
l=,
Cells with higher PFV ratings are available upon request.

RMS

I
'

Forward Current, On-State

Average Forward Current, On-State
Rate of Rise of Forward Current, On-State, di/dt
Peak One-cycle Surge Forward Current, I FM (surge)
Pt (for fusing)
Peak Gate Power Dissipation, P GM
Average Gate Power Dissipation, P G (A v)
Peak Forward Gate Voltage, V G fm
Peak Reverse Gate Voltage, V GR m

'Indicates Data included on

"NOT

JEDEC type number

maximum Vfom and

16 amperes (all conduction angles)

Depends on conduction angle (see Charts 3 and 4)
__ 10 amperes per microsecond
125 amperes*
2
milliseconds)
1.5
40 ampere seconds (for times
5 watts*
0.5

watt*

10 volts*
5 volts*

-40C
-40C

Storage Temperature, T stg

Operating Temperature, Tj
Stud Torque

MILLISEC.)

(1)
Vkom (non-rep)

to
to

+125C*
+100C*

30 lb-in (35 kg-cm)

registration.

TO EXCEED GATE POWER RATINGS

328

2N 1842-50
CHARACTERISTICS
TEST

SYMBOL

PEAK REVERSE OR
FORWARD BLOCKING
CURRENTf

MAX

MIN.

UNITS

Irom

= -40C to +100C
Vbom = Vro M = 25V Peak
= 50V
= 100V
= 150V
= 200V
= 250V
= 300V
= 400V
= 500V

mA

= +35C, Io = 10A
Vhxm = VrxM = 25V Peak
= 50V
= 100V
= 150V
= 200V
= 250V
= 300V
= 400V
= 500V

To

45.0
38.0
25.0
13.0
12.0
11.0
10.0
8.0

Ifom

6.0

FULL CYCLE AVG.

REVERSE OR FORWARD
BLOCKING CURRENTf

CONDITIONS

mA

or

2N1842
2N1843
2N1844
2N1845
2N1846
2N1847
2N1848
2N1849
2N1850

Irxcav)

or

To

180 Conduction Angle

Ifxcav)

2N1842
2N1843
2N1844
2N1845
2N1846
2N1847
2N1848
2N1849
2N1850

22.5*
19.0*
12.5*
6.5*
6.0*
5.5*
5.0*
4.0*
3.0*

GATE TRIGGER CURRENT

GATE TRIGGER VOLTAGE

Vg

80
150*

mAdc
mAdc

3.5*

Vdc
Vdc

2.9

2.5

'C/watt

0.30*

PEAK ON-VOLTAGE
EFFECTIVE THERMAL
RESISTANCE

TEST

- +25C, V FX = 12Vdc, R L = 50 ohms

- -40C, V FX = 12Vdc, R L 50 ohms
= 40C to + 100C, Vrx = 12Vdc, R L = 50 ohms
+ 100C, Vfxm = Rated V r M Rl = 1000 ohms
T c = +25C, Ira = 50A Peak, 1 millisecond wide pulse
Tc

Tc
Tc

(DC)

fValues apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which
Vfom and Vkom ratings apply equals llC/watt.
*Indicates data included on JEDEC type number registration.

OUTLINE
NOTES:
1. Complete threads

to

extend

DRAWING

to

(COMPLIES WITH JEDEC TO-48)

within 2V2 threads of seating

plane. Diameter of unthreaded
portion .249" (6.32MM) Maxi-

mum, .220" (5.59MM) Minimum.

2.

3.

Angular

orientation

terminals

is

of

these

undefined.

W-28 UNF-2A. Maximum

pitch

diameter of plated threads shall

be basic pitch diameter .2268"
(5.76MM), minimum pitch diameter .2225" (5. 66MM), reference:
screw thread standards for Federal Service 1957, Handbook
H28, 1957, PI.
4.

A chamfer

INCHES

SYMBOL
A

3,

>-

MIN.

MAX.

330

.505

8.38

12.83

.115

.140

2.92

3.56

tfb,

.210

.300

5.33

7.62

7.

Small terminal

NOTES

13.82

.544

.562

13.82

14.27

.113

.200

2.87

5.08

.060

.52

1.1*3

30.30
22.23

.875

J
,

optional.

is anode connection.
Large terminal is cathode con-

.544

is

MILLIMETERS

MAX.

MIN.

0D

{or undercut)

6.

5.

SEE NOTES

on one
both ends of hexagonal por-

or
tions

maximum

.150

3.05

(SM

Case

.422

P>

.060

.075

*1

.125

.165

.453

10.72

11.51

nection.
is

gate connec-

SEE NOTES
2 8 7

tion.
8.

Insulating

kit

available upon

re-

quest.

A. Vi-28 steel nut, Ni. plated, .178

min. thk.
B. Ext.
tooth
lockwasher,
steel, Ni. plated, .023 min. thk.

329

.52

3.18

.91

4.19
3

2N 1842-50

lOOr

^-

JUNCTION
TEMPERATURE

DC

notes:

X X
/

25'C

(1) FREQUENCY 'SO lOtuun:

=I00C
\ (2) JUNCTION TEMPERATURE CURRENT/
\
31CURVES APPLY FOR ANODE
rateofrise=ioamppermicro- Jr
]_
conduction '^SECONDS MAX
180
f

"^-lOO'C

90

UJ
IE
'

<

60

CONDUCTION
ANGLE -30

1-

UJ
EC

(0

S
Q

/
/

a,

o
UJ
4

fo.,

10

14

12

FORWARD CURRENT- AMPERES

AVERAGE

\l

INCREA SES TO F 3RWARD B REAKOVEF VOLTAOE

.01

2.

1.

FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

INSTANTANEOUS ON- VOLTAGE- VOLTS

MAXIMUM FORWARD CHARACTERISTICSON-STATE

NOTES:

(1)

FOR

NOT es:

5"X5"

WER

~~ 4"X4"

DISSIPATION.

kXIMUM THERMAL RESISTANCE (CASE TO

AMBIENT)" ll'C PER WATT.
(4) CURVES APPLY FOR ANODE CURRENT.
w
RATE OF RISE = 10 AMPERES PER
MICROSECOND MAX.

N,

i
I

VT

DC

DC -

.40

(4)

ALL FINS 1/16" THICK COPPER WITH EMISSIVITY-90%

FIN SPACING -3/4.

'

CONDUCTION
ANGLE
t

14

90

16

IO0

120

AMBIENT TEMPERATURE -

AVERAGE FORWARD CURRENT- AMPERES

3.

I20*-0.9I
90* -0 82

IsO*
/

BY FOLLOWING FACTORS:

X3
5
VW
sV \
A*
^

120
/

\V

"X3"

90

PROPER CONDUCTION ANGLE FACTOR.

60

g 40

30"- 0.58

V
ANGLE

OR INDUCTIVE LOAD, 50 T0400 H E.

(2)R< TINGS DERIVED FOR 05 WATT AVERAGE GATE
(I)RS SISTIVE

PC

OTHER CONOUCTtON ANGLES, MULTIPLY CURRENT

WLUES

\
1

OR INDUCTIVE LOAD. 50 TO 4001- ZFREE

(2JCURVES SHOWN ARE FOR 180" CONDUCTION ANGLE

FIN SIZE

RESISTIVE

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

4.

330

SUGGESTED MAXIMUM CURRENT VS. AMBIENT

TEMPERATURE FOR VARIOUS FIN SIZES

>

2N 1842-50

-40C TO + IOCC
|

[ MIN.

GATE CURRENT REQUIRED

t TO TRIGGER ALL UNITS

1

ir

"t;25"C
J

J-

AT'.

-40*C

in

g s.

.sr
K\

K;

^P 1i
l ^
I ^ #]
ii Tf"
1

l -MIN. GATE
- VOLTAGE REQTJTO.

TRIGGER ALL

UNITS

2140

TEMPERATURE

f 100

50
100
200'
150
INSTANTANEOUS GATE CURRENT-MILLIAMPERES

"

SURGE- 40C TO+IOO'C

H00C=0.3V

'

NOTE: JUNCTION

tr

MAX. GATE VOLTAGE THAT

SHADED AREA REPRESENTS

.=*

I 80

POINTS FROM - 40"C TO + IOO"T.

j-

MAX ALLOWABLE GATE

POWER DISSIPATION. 50
WATTS.

"

40

10

60

o<

4
.8
1.2
1.6
2.0
INSTANTANEOUS GATE CURRENT- AMPERES

CYCLES

6.
5.

GATE TRIGGERING CHARACTERISTICS

AT

60

Hz

MAXIMUM ALLOWABLE NON-RECURRENT PEAK SURGE

FORWARD CURRENT AT RATED LOAD CONDITIONS

7.

MAXIMUM TRANSIENT THERMAL IMPEDANCEJUNCTION TO CASE

331

'

2N2160

Silicon Unijunction

Transistor

2N2221

SEE GES2221

2N2222

SEE GES2222

2N2322-29 SEE C5 SERIES

The General

Electric

Silicon

Unijunction Transistor

is

a three terminal device

having a stable "N" type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high
pulse current rating
circuits

make

timing circuits, trigger

this device useful in oscillators,

and pulse generators where

can serve the purpose of two conventional

it

germanium transistors.
The 2N2160 is intended for hobbyist applications where
silicon or

economy

circuit

is

of

primary importance. This transistor features Fixed-Bed Construction and is hermetically sealed in a welded case. All leads are electrically isolated from the case.

absolute maximum ratings: (25C) (unless otherwise specified)

450 mw
RMS Power Dissipation
RMS

50

Emitter Current

30 volts

Emitter Reverse Voltage

35 volts

Interbase Voltage

Operating Temperature Range

-65C to +140C

Storage Temperature Range

-65Cto+150C

electrical characteristics: (2 5C)

Standoff Ratio (V BB =10V)

Interbase Resistance' (V BB =3V, Ie = 0)
Modulated Interbase Current (V BB =10V,

BASE TWO

B2.

(unless otherwise specified)

Intrinsic

ma

2 amperes

Peak Emitter Current

E =50ma)

Note

Min.

Max.

0.47

0.80

" BBO

4.0

12.0

6.8

30

B2(MOD)

Emitter Reverse Current (Vbze =30V, I B1 =0)

Peak Point Emitter Current (V BB =25V)
Valley Point Current (V BB =20V, R B2 =100 ohms)

Ieo

12

Ip

25

Base-One Peak Pulse Voltage (See Circuit Shown)

VoB,

Iv

3.0

Units

Kohms
ma
ua
ua

ma
volts

Notes:
(1)

(2)

Derate 3.9

The

mw/C

increase in ambient temperature (Thermal Resistance to case

intrinsic standoff ratio,

is

r\

0.16C/mw).

essentially constant with temperature and interbase voltage.

is

defined by the equation:

VP =

200

t]

V BB +

1
i

Where V P

V BB
Tj
(3)

The interbase

=
=
=

Peak point emitter voltage

Interbase voltage
Junction Temperature (Degrees Kelvin)

resistance

is

nearly

temperature coefficient at 25C

is

ohmic and

increases

approximately 0.8%/C.

332

with temperature

in

a well-defined manner. The

2N2344-48

SCR

2N2417-22 SEE GES2417

2N2483

The 2N2344

SEE GES2483

series of Silicon Controlled Rectifiers are reverse blocking thyristors for

use in

low power switching and control applications. This series features maximum gate sensitivity
and nigh external gate-cathode shunting resistance. The specified blocking voltages are consistent with the Maximum Junction Temperature limit, permitting simple,
straightforward
circuit design.

All welded construction

Glass to metal seals

Low

holding current

Extremely high gate sensitivity (I GT = 20 mA)

Single-ended package ideal for printed circuit applications

maximum

allowable ratings
Working and Repetitive
Peak Reverse Voltage

Peak Forward
Type

Blocking Voltage,
T,

25
50
100
150
200
less

& V EO M(rep)
= -65Cto +100C

VitoM(wkg)

= -65Cto -HOOT

2N2344
2N2345
2N2346
2N2347
2N2348

With 40,000 ohms or

V rx U 1

Tj

Volts*
Volts*
Volts*
Volts*
Volts*

5
T,

Non-Repetitive Peak
Reverse Voltage
Millisec), V R on(non-rep)

= -65Cto +100C

25 Volts*
50
100
150
200

40 Volts*

Volts*
Volts*
Volts*
Volts*

75
150
225
300

Volts*
Volts*
Volts*
Volts*

connected from gate to cathode.

Peak Forward Voltage, PFV

Forward Current
Average Forward Current, On-state

300 Volts

RMS

Peak One Cycle Surge Forward Current, non-repetitive,

Peak Gate Power, Pom
Average Gate Power, P g <av>
Peak Gate Current, I fm
Peak Gate Voltage, Forward & Reverse, Vsfm & Vorm
Storage Temperature
Operating Temperature
Indicates data included on

JEDEC

16 Amperes
Ifm (surge)

Depends on conduction angle

(see charts 3 and 4)
15 Amperes*
0.1 Watt*
0.01 Watt*
0.1

Ampere*

6 Volts*

-65C to +150C*
-65C to +100C*

type number registration.

333

2N2344-48

characteristics
Symbol

Test

REVERSE BLOCKING CURRENT

Min.

Typ.

10

2.0

Irx

Max.

Test Conditions

Units

pA

= Rated Vrom (rep)

= +25C,
Rgk = 40,000 ohms
Vex = Rated Vrom (rep),
Tj = +100C,
Rgk = 40,000 ohms
Vfx = Rated Vfxm,
Tj = +25C,
Rgk = 40,000 ohms
Vfx = Rated Vfxm,
Tj = + 100C,
Rgk = 40,000 ohms
Vfx = +6 Vdc, Tj = +25C,
R L = 100 ohms max.
Vfx = +6 Vdc, T, = -65 C,
R L = 100 ohms max.
Vfx - +6 Vdc, Tj = +25 C,
R L = 100 ohms max.
Rgk = 40,000 ohms
Vfx = +6 Vdc, Tj = +25 C,
R L = 100 ohms max.
Vfx = +6 Vdc, Tj = -65C,
R L 100 ohms max.
Ifm = 3.14 amps,
Tj = +25C,
Rgk = 40,000 ohms
Rgk = 40,000 ohms,
Tj = 25C
If = 1 amp, Tj = 25C
If = 1 amp, Tj = 25
If = 1 amp, Tj = 25
iv = 1 amp, R = 1 amp
dv/dt = 20v//sec.
Rgk = 100 ohms, Tj = 100

Vrx
Tj

FORWARD BLOCKING CURRENT

Ifx

GATE TRIGGER CURRENT

40

100*

/x.A

2.0

10

fiA

40

100*

tiA

20

,uAdc

75*

/iAdc

10

40

/iAdc

0.5

0.8

Vdc

1.0*

Vdc

Igt

GATE SUPPLY TRIGGER CURRENT

Igs

GATE TRIGGER VOLTAGE

Vgt

0.35

PEAK ON-VOLTAGE

Vfm

1.6

2.0*

HOLDING CURRENT

Ihx

0.2

1.0*

mA

TURN-ON TIME
DELAY TIME
RISE TIME
TURN-OFF TIME

+ tr

1.4

,usec.

td

0.6

usee.

tr

0.8

jttsec.

to

20

Msec.

td

(See Application Notes)

Includes data included on

JEDEC

type number registration.

OUTLINE DRAWING
(Conforms to JEDEC TO-5 Package Outline)

1.500

.260
.240

MIN.

IOO MIN._

"(NOTE

ANODE LEAD
(GROUNDED
TO HOUSING)

I)

NOTE 1: THIS ZONE IS CONTROLLED FOR AUTOMATIC HANDLING. THE VARIATION IN ACTUAL
DIAMETER WITHIN THIS ZONE SHALL NOT
EXCEED

.017 DIA.

.010.

NOTE 2: MEASURED FROM MAX. DIAMETER OF

THE ACTUAL DEVICE.
3: THE SPECIFIED LEAD DIAMETER APPLIES
THE ZONE BETWEEN .050 AND 250 FROM
THE BASE SEAT. BETWEEN .250 AND 1.5 MAXIMUM OF .021 DIAMETER IS HELD. OUTSIDE OF
THESE ZONES THE LEAD DIAMETER IS NOT
CONTROLLED LEADS MAY BE INSERTED, WITHOUT
DAMAGE, IN .031 HOLES WHILE DEVICE ENTERS
371 HOLE CONCENTRIC WITH LEAD HOLE CIRCLE.

.370

NOTE
IN

APROX WEIGHT
ALL DIMENSIONS

.335
.325

05 OZ
IN

-3 LEADS

INCHES

017 -.001

(NOTE

334

3)

2IM2344-48

i?n

JUNCTION
100 c

25 C

inn

OHM RESISTOR CONNECTED

FROM GATE TO CATHODE.

NOTE: 40,000

fin

/
1

fin

NOTE

40

ON VOLTAGE

MAXIMUM AT IOOC JUNCTION TEMPERATURE

MEASURED AT A POINT ON
LEADS 1/2 INCH FROM
BOTTOM OF CASE

20
TYPICAL AT IOOC

^"

MAXIMUM AT 25"C
TYPICAL AT 25 "C

i
I

20

10

v -.

10

2.0

2.

TYPICAL

3.0

MAXIMUM FORWARD

60

50
(

70

80

PERCENT OF RATED VOLTAGE

AND MAXIMUM FORWARD AND

90

100

REVERSE

BLOCKING CHARACTERISTICS

INSTANTANEOUS ON VOLTAGE - VOLTS

1.

40

30

INSTANTANEOUS APPLIED VOLTAGE

INCREASES TO FORWARD
BREAKOVER VOLTAGE

CHARACTERISTICS

CONDUCTING STATE

NOTES:
RESISTIVE
1

CASE

NOTES-

OR INDUCTIVE LOAD. 60CPS

TEMPERATURE

IS

130

MEASUREO AT A POINT

IN

THE CENTER

120

cc

no

100

*"

90

/
c

**

2.

60 CPS.
RATINGS DERIVED FOR

01

WATT

\
\

1.

ISO"

CONDUCTION
ANGLE

z
S
s

80
70

*
o

30*

60*

90"**

120

180

DC

40

30

<t

X
20

1 N
0"

120*
10

L_J50"

C0NDUC1 ION
ANGLE

AVERAGE

4.
AVERAGE FORWARO CURRENT -AMPERES

3.

MAXIMUM ALLOWABLE CASE TEMPERATURE

335

\l
FORWARD CURRENT -AMPERES

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

2N 2344-48

26

(I)

2.4

2.2

12]

(3)
(4)

2.0
1

1.6

1.4

T~ ~r

~r

T"

SHADED AREA REPRESENTS LOCUS OF POSSIBLE

FIRING POINTS FR0M-65"C TO +IOOC
JUNCTION TEMPERATURE - 65C TO + IOOC
6 VOLTS DC ANODE TO CATHODE
40,000 OHM RESISTOR FROM GATE TO CATHODE
AS SHOWN IN CIRCUIT BELOW:

1.8

NOTES:

"I

80
1

CONDUCTION
ANGLE

120'

90/
6 0/

1.2

1.0

3 u-

0.8
0.6

0.4

NOTE:
JUNCTION TEMPERATURE =I00C

0.2

0.4

0.6

0.8

1.0

1.2

14

AVERAGE FORWARD CURRENT-AMPERES

5.

FORWARD POWER

DISSIPATION
0.2

0.4

0.6

0.8

1.0

1.2

INSTANTANEOUS GATE SUPPLY CURRENT-MILLIAMPERES

6.

GATE TRIGGERING CHARACTERISTICS

20O
NOTE:

00
80
60
40
H
o=rr

(1)

JUNCTION TO ANODE-

(2)

CELL LEAD MOUNTED, NO HEAT SINK

20

UJ UJ

i-

Z
UJ

10

R
1

UJ

< **
ir uj
^
0-

4
Z

0.001

0.01

0.1

TIME
7.

IN

SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

336

10

100

14

Silicon Unijunction

Transistors

The General

Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new structure
resulting in lower saturation voltage, peak-point current and valley current as well as a much higher baseone peak pulse boltage. In addition, these devices are much faster switches.

The 2N2646

is intended for general purpose industrial applications where circuit economy is of primary
importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications
where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where
a low emitter leakage current and a low peak point emitter current (trigger current) are required

(i.e.

long timing applications), and also for triggering high power SCR's.

maximum

absolute
Power

RMS

Dissipation

ratings:

(Notel)

Emitter Current

Peak Emitter Current (Note 2)

(25C) (unless otherwise specified)

300

mw

50

ma

Ml

3: Calculate

and iublrattug

amperes

th

u
i
II

30 volts

Emitter Reverse Voltage

ALL DIMENSIONS ^

35 volts

Interbase Voltage

65 C to
65C to

Operating Temperature Range

Storage Temperature Range

electrical characteristics:

-f-125

Base-One Peak Pulse Voltage (Note 3)

SCR

Firing Conditions

Y-s*\

THIS

Derate 3.0

Kb bo

Min.

Typ.

Max.

0.69

0.68

0.77

0.82

6.7

9.1

4.7

6.7

9.1

Typ.

0.56
4.7

Ir3(MOI

Ieo

2
24
.001

12

0.8

Ip

4
3.0

Iv

2N2647
Max.
0.75

Min.

V K(SAT)

V OBI

MW/C

The

ma

27

.001
1.0
9

8.5

6.0

9.5

Kfi
volts

.200
2

18

ua
/xa

ma
volts

The

intrinsic standoff ratio,

77,

is

essentially constant

with temperature and interbase voltage.

by the equation

77

is

defined

Vr = v Vbb + Vd
Where Vp = Peak Point Emitter Voltage
Vbb = Interbase Voltage

Vd

Junction Diode Drop (Approx. .5V)

EMITTER
VOLTAQF

K-SATURATIONREGION

REGION

-PEAK POINT
EMITTER TO
1

FIGURE 2

FKMJRE

LEAD

GROUNDED

(See Figure 26, back page)

increase in ambient temperature.

total power dissipation (available power to Emitter and Base-Two) must be limited by the external
circuitry.
2. Capacitor discharge
10/ifd or less, 30 volts or less.
3. The Base-One Peak Pulse Voltage is measured in the
circuit below. This specification on the 2N2646 and
2N2647 is used to ensure a minimum pulse amplitude
for applications in SCR firing circuits and other
types of pulse circuits.
1.

^j*~wn

(25C) (unless otherwise specified)

=
=
=

X^H
-

ZN2646

019 Mil
016 MIN

\r \ff

-|-150C

Standoff Ratio (Vbb

10V)
Interbase Resistance (Vbb
3V, I E
0)
Emitter Saturation Voltage (Vbb
10V, I K
50 ma)
Modulated Interbase Current (Vbb
10V, I E
50 ma)
Emitter Reverse Current (Vbe
30V, I B i
0)
Peak Point Emitter Current (Vbb
25V)
Valley Point Current (Vbb
20V, B2
100Q)

SOOMIN

1\

i.'1

PARAMETER
Intrinsic

ii

'"

ONE DIODE
CHARACTEmOTiC

FIGURE 3

Unijunction Transistor Symbol wifh Nomenclature

used for voltage and currents.

337

Static Emitter Chora ct eristics curves showing imparameters and measurement points
(exaggerated to show details).

portent

2N2646, 7

flj-0
1

--

-90TH PERCENTILE

'i

SI ATIC EK ITTER

/
/

;harac TERtSTICS

T= + 25-0

10

r
j
f

<

'

BB

//

MEDIAN

-40MA
=

50MA

STATIC 1NTERBAS

CHARACTERISTIC s

IO\

I E '30M

l^ va a* 20V

ii

La

T*

+ 25*C

TA'*" 25C

-V Ba '5V

IB^O
1

10

14

12

18

(6

20

EMITTER CURRENT-I E -MILLIAMPERES

10

14

12

20

18

16

BASE TWO CURRENT-I-.-MILLIAMPERES

tO

20

30

40

FIGURE 6

FIGURE 5

FIGURE 4

INTERBASE VOLTAGE -VBB -VOLTS

/lj-0

/l e =IO.

M -3!

ST ATtC EM ITTER

MAR AC ERISTI S
25C

/
/
/

/-90TH PECENTIL

MEOIAN-/

/I E

40MA

'

10
CM

zo

V BB -20 V

rA -*zbc

-V BB IOV

STATIC

INTERBASE

CHARACTERISTICS

TA -*

"C

-VBB = 5V

<

IB 2 =
4

10

EMITTER CURRENT-

IE -

MILLIAMPERES

14

12

20

18

16

TWO CURRENT-I B2-MILLIAMPERES

10

FIGURE 9

INTERBASE VOLTAGE- BB -V0LT5

FIGURE 8

FIGURE 7

STA TtC EMITTER CHARAC ERISTI CS

T* = 55*C

_
STAT

VBB" 30V

IC

INTE RBASE

CHARAC TERIST ICS

55C

IE

lOMAy

IE

MA

'

V BB .20,

10
10

/
/~"*

IOV

/
^I

30MA

II

<

f^M* SOMA

\^~ V *' iV

vi,.. OMA

|ib z -o

EMITTER CURRENT

10
-

IE

12
-

14

MILLIAMPERES

FIGURE lO

16

18

20

BASE TWO CURRENT

12

10

-I

FIGURE

338

14

M -MILLIAMPERES

11

16

18

20

20
INTERBASE VOL TAG E-Vas- VOLTS

FIGURE 12

30

40

2N2646, 7
90TH PERCENTILE

10

_V

MAX
rr^j

W
U

ME

Ta= + E5"C

RBBo

IB,

R Beo :&-5K-,

/ B?

/^

MEDIAN

5
*;-

r~

1C-6

AMBIENT

* 40

*<:

BO

+i

QO

+i

to * 40

60

I0

EMPCIMTURF-T, -DEGREES CERTKSRAOE

USE T0 REVERSE WXIME-Vast

18

,.

10

20

40

SO

v ee

-VOLTS

..

60
*

SO

70

90

-vClt^

FIGURE 15

FIGURE 14

FIGURE 13

2O304O5O60TT3809O1OO

EWTTElt

GURE

//

20

IN TERBASE CHARAC ERISTICS AT ANY

A rfBIENT TEMPERAT JRE MAY BE
D TERMINED BY DIV DING THE
H 3RIZ0NTAL SCALE BY K B FROM

;:^;

:-'-:C

?0

9. IK

fr

la,

4t

^-"^SOOMW

^Rbb

Z
,.t

E'3 V

-v

>- ::

4.7K

Zj

I0"

M;
!

B2

^\.

ORMALIZE

I B? (MOD

VS TEMP

**

NORMAL ZED VEB|

~W

-40

+80

-20

AWStSsT

+40

*&>

Tew^RWyHe-T4 -OE5Wg3

AT) VS

+80

IE

.50MA

TA

+ 25"C

TE MP

+1O0

4120

+t40
10

GENTrGHftDE

FIGURE 16

20
2S
IS
WTEPBfcSE VOuTSfiE-^e-VOLTS

30

35

40

FIGURE 17

1.04

I
T = +25" C
lu '

-SO

-40

-20

+40
+80
+80 +00
+120
+140
+20
JUNCTION TPWTUfW~Tj~0E0EE3 CEMTISRAOE

+160

INTERBASE VOLT6-V

m -VOLT5

FIGURE 18

FIGURE 18
339

2N2646, 7
16
1.4

s
ec

*2&^

fiJS

^*^*^

Tj,--S5*C

fi46 01 1.Y

l0

90%

q!

-T.+i

!*

..

LIMITS

"~

'

VOT "6V TO 20V

*^1

^^M

<

25*C

4
Z
a.

o
-40

-60

+80
+20
+40
+60
O
AMBIENT TEMPEHATURE-TA -DEGREES CENTIGRADE

-20

INTERBASE VOLTAGE -VBB ~ VOLTS

FIGURE 20
1

II

FIGURE

+140

+120

+100

21

'"

^'"WWHJS: ;

^'

<r?

',

...,. *T.BM-TWO

's

I2S' c -

T 28'C

;:

*tKWM W-miTTH*

"::

<& ^
as* c

1*

MICROSECONDS

CAPACITANCE -C, -MICROFARADS

RIGGER AMPLITUDE AS

PULSE WIDTH

FIGURE 22

Fi

iF

UNIJUNCTKM TRANSISTOR

FIGURE 23
2.0

'"

-/>

1 .0

"
J

>
0.001

0.002

0.OO5

0.02

0.01

0.05

0.2

0.1

INTERBASE VOLTAGE" BB "V0LTS

CAPACITANCE-C|-MJCROFARADS

FIGURE 25

FIGURE 24
36
"

'r-

*
t
\

32

30

^
M

J)-r-

iii
CUfWE SCR TYPE
"8!
T C3S.CM 2TAilO%
C3B.CM 4Tfi(0%
27 Ot 10%
B
CIO .CI
47 iit *
CIO, CI 1
C
c
C8B.CM

3SV

20V

S 26

'"';'

11

hull

V. IMA*)

MV
lV
v
3BV

__.

"

-J

-4

-T

"
1

19

'

a!
0.

i4

A\
\

cfa-awTT(tt-T?A

*L

V>

S^=

.Ri

J-R-9

Jwk ?K>oo aHE&Hdc

"

V|(MAX)

38V
'

$M!f>
uaS RFS

CM-2MfiMe-

iii.
Rl
iurvc
a"" fcra* iv

:32(2NI7K- Ml * c

SCRTYPC

^tr

* &

,,,,

^tjf

K>

n-

>p-<.T

'r

^jJFi

ft
.

..

Sl^

"T

i
.

fSJ*

'

f**"t

1 X

'

@H

JlOOfl

T^^-

"!.F

g- r*

pulse

II)

'a

1
:

Mttl

ifo
2

Z&VJxr

R&

BBH

gam*:

fi'i

i?]

*t

B
vL* **
CAPACITANCE - C

:-.

'

i,

,^iT+ff

'::-

sn*pw

kituu

inn 5

t,.

c.

1
<:

I-

..

ANCE

- MICROFARADS

Ct - MICROFARADS

FIGURE 26B-2N2647-Hi Current SCR's

FIGURE 26A-Both types- Lo &Med. SCR's

340

Silicon

Transistors

NPN

The 2N2711 and 2N2712 are planar passivated

Silicon transistors specifically manufactured
for radio and general purpose commercial applications. They are housed in an epoxy case and are
intended to perform all small signal functions in a conventional
radio.

AM

maximum

absolute

ratings:

(25C) (unless otherwise specified)

2N2711

2N2712
Voltages

Collector to Emitter
Emitter to Base
Collector to Base

VCEO

18

V EBO
V CBO

volts
volts
volts

18

DIMENSIONS WITHIN * EDEC

OUTLINE TO-98

Current

Collector* (Steady State)

mA

100

NOTE

t:

Lead diameter is controlled in the

070 and 750 from the seat

zone between

Between 250 and end

ing plane

ma>

Dissipation

Total Power (Free air

Total Power (Free air

@ 25C)
@ 55C)

Pt
Pt

ot

021

is

ot lead

held

mW
mW

200
120

500
M1N

SEATING

PLANE

Temperature

Storage
Operating

-55
+100

TsTG

T,

to

+125

C
C

*Determined from power limitations due to saturation voltage at this current.

**Derate 2.67 mW/C increase in ambient temperature above 25C.

electrical characteristics: (2 5^C) (unless otherwise specified)

2N2712

2N2711
D-C CHARACTERISTICS
Vob 18V)
(Vcb = 18V, T 4 = 100C)
Cutoff Current (Veb = 5V)

Collector Cutoff Current

Emitter

Min.

IcBO
IcBO
Iebo

Forward Current Transfer Ratio

V Ce =

4.5V, Io

= 2 mA)

SMALL. SIGNAL CHARACTERISTICS

Common Emitter (Vce = 5V, 1 = 2 mA,

Max.

Typ.

Min.

Max.

Typ.

0.5 /iA

0.5

30

IIfe

15

15

0.5

0.5

90

MmA

225

75

= 455 kHz)

Forward Current Transfer Ratio: Output a.C. Short Circuited

input Impedance: Output a.c. Short Circuited

hfe
hie

Reverse Voltage Transfer Ratio: Input a.C. Open Circuited

Output Admittance: Input a.c. Open Circuited
Forward Transfer Admittance: Output a.C Short Circuited
Input Admittance: Output a.c. Short Circuited
Reverse Transfer Admittance: Input a.C Short Circuited
Output Admittance: Input a.c. Short Circuited

169 Z -42
2580 Z -41

55Z-11

Z 10

1040

Z 79

.027

.071

.053

ohms

Z 48

4770 Z 48

1610 Z 79

h.
Vfe
yie
yre
y e

Z0

.066

,umhos

mho

Z0

960 Z 10

388 Z 41

-26Z90

-28Z90

170 Z 90

71Z45

,umho
jumho
Aimho

HIGH FREQUENCY CHARACTERISTICS

Collector Capacitance

(Vob

10V,

IE

0, f

= 1 MHz)

Ocbo

12

4.5

12

4.5

pF

NOISE

BW =

Noise Figure (Io

100 ftA, Vce
10 kHz,
5V, f
1 Hz,
Signal to Noise Ratio in Typical RF Circuit (1600 kHz, 12 juV signal)

NOISE VOLTAGE

AND CURRENT

VSI E

5V

ANALYZER QUAN-TECH
INC.)

^,

^
O.OI

//
.'
^s"

.-*

,"'

IKHz

IC

2.8

2.8

S/N

22

22

OPTIMUM SOURCE IMPEDANCE FOR LOW NOISE

2N2T1I,ZN2TI2
tul

ylKHt

i*

>

"

---^

<ZZ-

0~

OPTIMUM SOURCE IMPEOANC

FOR LOW NOISE VS I,

3(0 TRANSISTOR NOISE

N.F.

TA -25*c

LABS,

2)

3-

NOISE VOLTAGE AND CURREN

Vc

vs.

Rg = 2000

'^

341

INFORMATION FROM MOO

910 TRANSISTOR MOISE

dB
dB
vs.

2N2646, 7

TYPE 2N2712

TYPE 2N2711,
h fe vi. c
I

h fc vs.

If

vs I
2N27II

t>

TA" "* C

h f,

VS

Ic

VCB 5V
,,

T-H3*C

AT 20H

AT

aOMHly/
AT 40

AT 4C Hi-*"

3.1

hfe or h FB vs.

h fe or h PE vs.

Ic

280

KHl/
....

"y.

SSKHtVS I c
.

ZH
n f,

^
s

IM

VS

5V
S

IE

5V

160
T

T.- 25* c

200

vs i t

25* C

'***/

e 10

TYPE 2N2711,2N2712
Iobo vs.

TEMPERATURE

V5. V,
V CB
Cobb vs.
Icao VS TEMPEH ATURE
27II.2N27 2
VC6 = >8V

t> vs. I r
'CE (SAT)

ZN2TII.ZN27I2
(SILICON EPOXY NPN)

V*c
Vm.mt vt I c
2NZTII, ZNZ7IZ
I c /I

<>
-^*

20

40

60

80

100

TEMPERATURE IN'C

342

Silicon

Transistors

The General

Electric 2N27 13 and 2N2714 are epoxy encapsulated planar

epitaxial passivzted
silicon
transistors specifically manufactured for general purpose
commercial applications. They are particularly
useful in output stages where low saturation voltage is desirable. They
may also be used to advantage in
switching applications due to their low storage time, good beta holdup
to beyond 1 50 ma and low
CE(SAT).

NPN
V

absolute

maximum

(25C)

ratings:

(unless otherwise specified)

Voltages

Collector to Emitter
Emitter to Base
Collector to Base

VcEO

18

VcBO

5
18

V EBO

volts
volts
volts

Currant

NOTE

Collector* (Steady State)

t: Lead diameter is controlled in the

zone between .070 and .250 from the seat-

mA

200

Io

ing plane

max

Dissipation

Total Power (Free air

@ 25 C) **

Pt

is

of lead a

held.

mW

360

500
MIN

ALL OIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

Temperature

Storage
Operating

TsTG

-55C

to

T,

+125
+100

Determined from power limitations due to saturation voltage at

3.6 mw/C increase in ambient temperature above 25C.

"Derate

electrical characteristics:
DC CHARACTERISTICS

Vkb

= 5V)

Forward Current Transfer Ratio (Vcu

(25C)
Min.

= 4.5V, I 2 mA)
2N2713
2N2714

= 3 mA, Ic = 50 mA)
= 3 mA, I c = 60 mA)

Typ.

Max.

IcBO
IcBO

0.1

fiA

15

Iebo

0.5

mA
mA

30
75

hr
hrs

Collector Saturation Voltage (I B

Base Saturation Voltage (Ib

PLANE

this current.

(Vcb = 18V)
18V, T A = 100C)

Emitter Cutoff Current

SEATING

C
C

Collector Cutoff Current

(Vcb

Between 250 and end

of .021

90
225

VcB(SAT)
VbB(SAT)

0.30
1.3

volts
volts

LARGE SIGNAL CHARACTERISTICS

Input Impedance

Ib

Vbe.
(

Ibs

.05

- Vb
Ibi

where condition "1"

mA and condition "2" is I B =

SWITCHING SPEEDS

.5

is

mA, Vc

IV)

200

ohms

(See Figure 1)

Delay Time
Rise Time
Storage Time
Fall Time

60
85
85
40

t,
t.
t,

o3V
220 pf

>iooa

"HGum

i'^wbEkSSoF* -sjL^^..i<arey

343

swrreHHto etnewt

ns
ns
ns
ns

2N2713, 4
100

80

VS TEMPERATURE
2N27I3.2N27I4

I CB0

VCB

18V

TYPES
2N2713,

2N2714
,

^
40
60
TEMPERATURE IN

EISAT) VS
2713, 2N2 14
TA

_^

25

10

40

20
I c IN

60

mA

A DISTRIBUTION

OF VCE

(SAT)

.50mA
I B = 3 mA
Ic

Tfl

80
*C

25C

0.12

VcE(SAT) IN

344

VOLTS

80 100

200

400

6 00

800 1000

3
2N2713, 4

or h FE vs.

h,e

TYPE 2N271

Ic -

VS I c
2N27I3
VCE 5V

h FE

n,, vs

Vcb
f

J. E

5V

fe

IkHz/

IkHz

455kHz
IMHi
T 4 = 25 c

*.

FE

455kHz/

\
\

//

.--'

/h fe

KH

I,

h fe or h FE vs.

IN

6 8

10

mA

TYPE 2N2714

Ic -

hFE VS IC
V CE =5V
^

fe

VS

IE

V C B=5V

T4

f.

'^yr

25C
hF E

\
4

2
Ic

345

IN

mA

8 10

2N2713, 4

h fe vs.

Ic -

TYPE 2N2713

h VS I c
2N27I3
VC8 5V
T A .25-C

h (,

AT ZOtmz/

h AT

4
Ic

h, e

vs.

Ic -

40MHz.

10

mA

IN

TYPE 2N2714

h vs
h (.

2N27I 4
V
T 4 "25

AT 20 MHz

I
h

AT

Ic

IN

346

mA

0MHz

10

TYPES 2N2713, 2N2714

2N2713,4

280

'

h fe

AT IkHzVS

/OLTAGE
2N27I3 2N27I4

IE

h FE

25C

2N27I3.2N27K
Ic

TA

<

=
-

MHz

"

2mA
25C

<M

'

iO

"/

<

'

h FE

AT VCE

5V;

2MA

NOISE VOLTAGE AND CURRENT

VS I E
2N27I3, 2N27I4
VC = 5V TA = 25C
(INFORMATION FROM MODEL
310 TRANSISTOR NOISE

\kHzy
Jr

ANALYZER QUAN-TECH

LABS,

En
In

INC.)

,S
***

*'

**'

IKHz
10

---

-'

,^ -"

****^

+*

10

kHz

"

**

>-*r
10 kHz

<-'

If IN

mA

FOR LOW NOISE VS I E

2N27I3.2N27I4
V CE -5V

T A =25'C

^SKm

NjOOHz
INFORMATION FROM MOC EL
310 TRANSISTOR NOISE
ANALYZ R QUA N-T tCH
LA BS, IN C.)

\>

347

10

Silicon Unijunction

Transistor

2N2840
2N2906-7 SEE GES2906-7

The General

Electric

Type 2N2840

Silicon Unijunction transistor maintains

for extremely low interbase voltages. This transistor

is

its

negative resistance region

specifically characterized for use at interbase

voltages less than 10 volts and as low as 1.5 volts. The transistor is hermetically sealed in a welded case
equivalent to the TO- 18, except for lead orientation. Base-two is electrically common to case.

absolute

maximum

ratings:

(25C)

MTE h

Ma. diameter leads at a gaging

+ .0O1-.O0O below base seal

plane .O54

be

to

within

.230 diameter

Power Dissipation*

RMS

300

mw

50

ma

Emitter Current

Peak Emitter Current**

true

location

width, tab and to the max.

measured with a suitable

When gage
ment will be made
gage.

is

not

at

base seat

mi
trie

3: Lead diameter is controlled in

zone between 050 and .250 from the

base seat. Between .250 and end of lead

a ma>. of .021 is held.

NOTE

amps

.00/ ot their

max

relative to

Calculated by measuring

flange

diameter, including tab and excluding tab.

and subtracting the smaller diameter trom

the larger diameter

Emitter Reverse Voltage

Interbase Voltage
Operating- Temperature

Range

Storage Temperature Range

*Derate 2.4

mw/C

the transistor

30

volts

35

volts

65 to

+150

65 to

+175

increase in ambient temperature. Maximum power available to

circuitry to be within this rating.

EMITTER.
BASE ONE.
BASE TWO

must be limited by external

10

**Capacitor Discharge

/iid

or less, 30 volts or less.

electrical characteristics:

(25C)

PARAMETER
Emitter Peak Point Voltage (Vbb
Emitter Peak Point Current (Vbb
Intrinsic Standoff Ratio (Vbb

= 1.50V)
1.50V)

Vp

10V) ***

= 1.50V)
Emitter Valley Point Current (Vbb = 1.50V)
Emitter Base Saturation Current (Vbb = 1.50V;
Emitter Reverse Current (V B2 e = 30V; Ibi = 0)
Interbase Resistance (Vbb = 1.50V; I E = 0)
is

defined by the equation

Vp

1.30

Ip

Emitter Valley Point Voltage (Vbb

***n

Typ.

Min.

1.50V)

= v Vbb +Vd where V D ~

1.50

7.5

10

.62

Vv

.95

1.10

.20

.40

.70

20

40

Ie(sat>

Ieo

Rbb

4.7

.5V.

TEMPERATURE
COEFFICIENT, MV/C

10%

348

1.4

Iv

Vkbi

Max.

MED

90%

VP

-2.8

-3.4

-4.0

vB

-1.7

-2.0

.-2.4

.05

9.1

volts
fia

volts

ma
ma
Ma
Kfi

2N2840

^\
IR

1?

04

-60

-40

-20

+20
+40
+60
+80
+100
+120
+140
JUNCTION TEMPERATURE -Tj- DEGREES CENTIGRADE

+160

+180

vB B .io V
VBB =I.5V

<

o
>

A.

1-

v JB =6 V

a.

>

<

<

EC

v B"3

HI
t(-

V BB -3V

3
uj

v B"- sv

_Vbb=6v
vBB *rov

-60

-40

-20

20

40

60

80

100

120

140

-60

160

-40

20
40
60
AMBIENT TEMPERATURE -T.

TEMPERATURE -*C

80

K>0

120

140

160

- C

y\

vB B-IO V

V E e .m V

>

\s

v B B=6V

w
<t

>

^Vbb-SV

M^1

v B-6 V

1
cc

UJ

v B-3 V

s
-60

-40

-20

20

40

60

TEMPERATURE

80

100

120

140

v s !< V

-40

160

"C

-20

20

40

60

TEMPERATURE

349

100
#

120

140

160

Silicon

Transistors

The General

Electric 2N2923,

2N2924 and 2N2925 are a family

of planar passivated

NPN

silicon transistors intended for general purpose applications. The planar passivated construction assures excellent device stability and life. These high performance, high value devices
are made possible by utilizing advanced manufacturing techniques and epoxy encapsulation.

absolute

maximum

ratings:

(25C) (unless otherwise specified)

Voltages
Collector to Emitter
Emitter to Base
Collector to Base

V
V
25 V
25

VCEO
VEBO

VcBO

DIMENSIONS WITHIN
JEDEC OUTLINE T0-98
NOTE

Current

100

Collector (Steady State)*

mA

1:

Lead diameter

is

controlled in the

250 trom the seatBetween .250 and end of lead a

zone between .070 and

ing plane.

max. of .021

is

held.

Dissipation

Total Power (Free air at 25C) **

Total Power (Free air at 55C) **

360
250

Pt
Pt

Temperature
Storage
Operating

55

to

mW
mW

.500

SEATING

MIN

PLANE

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

+ 150C
+125C

T,

Determined from power limitations due to saturation voltage at this current.

*Derate 3.6 mW/C increase in ambient temperature above 25C.
*

electrical characteristics: (2 5C)

(unless otherwise specified)

Min.

D-C CHARACTERISTICS
Collector Cutoff Current (Vcb

(Vcb

25V, Ta

25V)

100C)

Emitter Cutoff Current (Veb

5V)

Forward Current Transfer Ratio

(Vce = 4.5V, Ic = 2 mA)

Typ.

Max.

Icbo
Icbo

0.1

Iebo

0.1

15

mA
nA

h
115
155
215

2N2923
2N2924
2N2925

SMALL SIGNAL CHARACTERISTICS

Forward Current Transfer Ratio
(Vce = 10V, Ic = 2 mA, f = 1kHz)

Input Impedance

180
300
470

90
150
235

2N2923
2N2924
2N2925
(Vce

= 10V,

Ic

mA,

1kHz)

ohms

15

h tb

HIGH FREQUENCY CHARACTERISTICS

= 10V, I B = 0, f = 1MHz)
(I c = 4 mA, Vcb = 5V)

4.5

Collector Capacitance (Vcb

Ccbo

Gain Bandwidth Product

ft

160

N. F.

2.8

10

pF

MHz

NOISE

100 M A, Vce
Noise Figure (Ic
= 1 Hz, Rg = 2000O)

BW

5V,

10kHz,

350

(2N2925 only)

dB

Silicon

Transistor

The General

Electric 2N2926 is a planar passivated silicon transistor intended

general purpose applications. The planar passivated construction assures
excellent device stability and life. This high performance, high value device is
made possible by advanced manufacturing techniques, epoxy encapsulation, and
utilization of the full line distribution of hfe. This full line distribution is supplied in five beta categories, each with a 2-1 beta spread. Each beta category is
color coded and the per cent of the total order shipped in each category is
shown below. Significant savings may be realized by designing equipment utilizing
all beta categories in proportions compatible with this "full line distribution"
for

type-

absolute

maximum

ratings:

Voltages
Collector to Emitter
Emitter to Base
Collector to Base
Current
Collector (Steady State)*
Dissipation
Total Power (Free air at 25C)**
Total Power (Free air at 25C)**

(25C) (unless otherwise specified)

VcEO
Vebo
Vcbo

V
V
V

25
5

25

Ic

100

Pt
Pt

200

mA

mW
mW

120

Temperature

on

I.

Tnt specified lead

diameter applies to the jone

between .050 and 250 frem
the base ol the seat. Be
tween .250 and end pf lead
a maiimum pi 021 diam
etei is held. Outside ol these
rones the lead diameter u
not controlled.

LL OIMEN.

Storage
Operating

TsTG

-55 to

+150C

+ 100C

Lead Temperature, 1/16" 1/32"

from case for 10 seconds max.

TL

(25^)

(NOTE

.017

I)

+260''C

*Determined from power limitations due to saturation voltage at

**Derate 2.67 mW/C increase in ambient temperature above 25C.

electrical characteristics:

3 LEADS

this current.

(unless otherwise specified)

D-C CHARACTERISTICS
Collector Cutoff Current
(V CB = 18V)
(V C b = 18V, T A = 100C)
Emitter Cutoff Current

(Veb

=5V)

ACBO
Icbo

0.5

/xa

15

/xa

0.5

tta

ebc

SMALL SIGNAL CHARACTERISTICS

Forward Current Transfer Ratio
(V CE = 10V, Ic = 2ma, f =

lkc)

h fe

35

Each unit will be branded with, the 2N2926 type number and will also be color
coded to identify the A-C beta range into which it falls. Segregation of the beta
distribution into the following five groups is provided, though it is not a requirement of the JEDEC registration. Typical D-C beta is also shown for guidance
purposes.

351

470

2N2926

(V CE
Min.

Color Code

10V, Ic

= 2ma,

Orange

90

Yellow

150

Green

235

2ma,

lkc)

lkc)

110
180

(V C E

4.5V,

2ma)

36
62

0-6%
5-10%
20-26%
35-45%
20-30%
Max.

ohm

15

h ih

Content

215
Typ.

Typ.

115
155

300
470
Min.

Input Impedance:
(Vce = 10V, I c

70

35
55

Brown
Red

Max.

HIGH FREQUENCY CHARACTERISTICS

Collector Capacitance
(Vcb = 10V, I E = 0,

Gain Bandwidth Product

(I c = 2ma, Vcb = 5V)

Imc)

4.5

Cob

120

f,

352

10

pf

mc

Silicon

Transistors

2N3390

The

General

designed

2N3390

Electric

is

a small signal industrial

control at an extremely low price.

absolute

maximum

NPN

an

as

planar passivated transistor

This device features tight beta

silicon

amplifier.

ratings: (25C)(unie ss otherwise

Voltages
Collector to Emitter
Emitter to Base
Collector to Base

specified)

V
V
V

18

V EBO

Current

DIMENSIONS WITHIN
JEDEC OUTLINE TO-98

Collector (Steady State)*

ma

100

NOTE

1:

Lead diameter

Pt
Pt

mw
mw

360
260

-55 to

+125C

+ 125"C

Determined from power

mw/C

limitations due to saturation voltage at this current.

increase in ambient temperature above 25C.

electrical characteristics:

(25C) (unless otherwise specified)

Sym.

Min.

Max.

Units

STATIC CHARACTERISTICS
Collector Cutoff Current

=
=

18V)
18V,

TA =

100C)

Emitter Cutoff Current

(V EB =5V)

MA
A

IcBO
IcBO

0.1
10.0

EBO

0.1

MA

Ices

0.1

/xA

/A

Collector Cutoff Current

(V CE

in

ALL OIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCEO

Storage
Operating

(Vcb
(V CB

controlled

ing plane. Between .250 and end of lead a

max. of .021 is held.

Temperature

**Derate 2.67

is

zone between .070 and .250 from the seat-

Dissipation
Total Power (Free air at 25C)**
Total Power (Free air at 55C)**

25V)

Forward Current Transfer Ratio

(V CE = 4.5V, I c = 2mA)

hpE

Collector-Emitter Breakdown Voltage

(I c = 1mA)

V(BR)CEO

400

800

25

DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
(Vce = 4.5V, I c = 2mA, f = 1kHz)
Output Capacitance, Common Base
(V CB = 10V, I E = 0, f = 1MHz)

400

1250

10

353

pF

.500

SEATING

MIN

PLANE

i_

Silicon

Transistors

2N3391.A

NPN

silicon planar passivated

Electric 2N3391 and 2N3391A are
devices intended for low noise preamplifier applications. The planar passivated
construction assures excellent device stability and life. These high performance,
high value transistors are made possible by utilizing advanced manufacturing
techniques.

The General

maximum

absolute

ratings (25C)

unless otherwise specified

Voltages

Collector to Emitter

Emitter to Base
Collector to Base

VcBO
Vbbo

26

VcBO

25

V
V
V
1: Lead diameter is controlled in the
zone between .070 and .250 from the seating plane. Between .250 and end of lead a

NOTE

Currant

100

Collector (Steady State)'"

mA

max. of .021

Dissipation

Total Power (Free Air

@ 25C)

360

Pt
Pt

<

is

Temperature

Storage
Operating

T.tg

Lead Soldering, X." Ki"

from case for 10 seconds max.

-55 to

+150

T,

+ 125

TL

+260

"1

IN

INCHES

AND ARE

SEATIN

MIN

PLANE

,050 .005

TO-98
c

.100+ .005

_ .I05
090
T
.140

LEADS

+.002
.017 -.001
.

(NOTE

I)

.110

unless otherwise specified

Mill.

Typ.

Max.

Collector Cutoff Currant

(Vob
(Vob

= 25V)
= 25V,Ta = 100

C)

.1

Icbo
Icbo

10

^A

Ibbo

.1

nA

Emitter Cutoff Currant

(Vbb

= 5V)

Forward Currant Transfer Ratio

4.5V, Io
2
(Vo

250

SMALL SIGNAL CHARACTERISTICS

= lKHz)
=
=

170"

= mA)

Forward Current Transfer Ratio

100/i.A,f
10V, I o
(Vo

500

200

Input Impedance

(Vo

= 10V, Io.= 2mA,f = lKHz)

(Vob

C
cbo

= 10V, I = 0, f = lMHz)

Gain Bandwidth Product

2 mA, Vob
(Io

= 5 V)

f.

ohms

15

h,

Output Capacitance

2.0

10

pF

MHz

120

NOISE

(wide band 15 Hz to 10 KHz,

Equivalent Noise Bandwidth

Noise Figure
(Io

ffl>

100 /*A, Vo

Typically a

minimum

M Type 2N3891A only.

= 4.5V, R, =
of

95%

15.7

KHz)

NF

5000 ohms)

of the distribution

is

above this value.

354

.500
__i

REFERENCE UNLESS TOLERANCED

Determined from power limitations due to saturation voltage at this current.

Derate 3.6 mW/C increase in ambient temperautre above 25C.

(25C)

f J*5
.225

held.

electrical characteristics

mW
ALL DIMEN.

r~

T075

1.9

6*"

db

V
TYPICAL CURVES

2N3391,

VS I c

h )8

VC

TA

25*C
|

01

.04

.02

.06.08.1

.02

.04

.06.06.1

.8

.6

.4

I c IN

.6

.4

Ic

.01

I0V

IKHz
T A *25C
f =

vs i c

h FE

IN

.8

10

20

mA

20

8 10

mA

.ImA
/,
/

2mA

c ibo

Vc

-0

ib0 VS

//

V 2mA,

I CB0 VS

URE
.1

VOLTAG E

f =

IKHz

T A =25C

TEMPERATURE

V CB

mA,.0lm A

18V

Ccbo
-0
B

V EB

-40

-20

40

60

80

or

V CB

,N

3456789

60
40
TEMPERATURE INC

80

20

100

db NOISE FIGURE

Ill
NORMALIZED

hr

%?

111

PARAMETERS VS

VC

10.

T fl

25"C

hoe

hf.
h oe

-<.

20

10

100

20

10

VOLTS

40

60 60 100
I

200

400 600 800 IOOO 2000

.02

(*A)

--

i0

h.

h re

.04

i?nicnnMq

MHOS
74 XIO" 3

26

.06.08

0.1

f'i

0.2
I c IN

355

0.4

mA

0.6 0.8

1.0

2.0

Ns

4.0

6.0 6.0 10.0

Silicon

Transistors

2N3392.3.4

2N3393 and 2N3394 are NPN silicon planar passisignal amplifiers. These devices feature tight
designed
as
small
vated transistors
price.
low
beta control at an extremely
The General

absolute

Electric 2N3392,

maximum

ratings:

(25C) (unless otherwise specified)

Voltages

Collector to Emitter

VCBO

25

Emitter to Base

Vebo
VcBO

Collector to

Base

25

Current

Collector (Steady State)'"

Ic

100

mA

Pt
Pt

360
260

mW
mW

Dissipation

Total Power (free air at 25 C)

Total Power (free air at 55C)

"

U>

Temperature

Storage
Operating
Lead Temperature, %e" ^2"
from case for 10 seconds max.
'

'

V
V
V

tg

-55

HOTE

1: Lead diameter is controlled in the

zone between .070 and .250 from the seating plane. Between .250 and end oHead a

max.

ot

.021

is

held-

t~r
SEATING

.500

to

T,

+125
+ 125

C
C

+260

MIN

PLANE

Determined from power limitations due to saturation voltage at this current.

Derate 2.67 mw/C increase in ambient temperature above 25 C.

electrical characteristics:

(25^C) (unless otherwise specified)

DC CHARACTERISTICS

Min.

Collector Cutoff Currejit

25V, I B
(Vcb

(Vob

=
= 0)
= 25V, T A = 100 C)

Typ.

JCBO

Max.
0.1

/UA

10

MA

0.1

MA

Emitter Cutoff Current

(V.b

5V,

Ic

0)

'ebo

Collector to Emitter Voltage

(Ic

= lmA)

v ceo

Forward Current Transfer Ratio

(Vcb
4.5V, Ic
2

mA)

2N3392
2N3393
2N3394

FE

h FE

volts

25

300
180
110

150
90
55

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

(Vcb

= 10V, I. = 0, f = 1 MHz

2N3393,4

2N3392

Input lmp*danc

(Vc.

10V;

Ic

= 2 mA; f = 1 KHz)

Gain Bandwidth Product

(Ic

= 2mA;

Vcb

= 5V)

Forward Current Transfer Ratio

(Ic

= 20 mA;

4.5

L cb

Vcb

5V, f

= 20 MHz)

hf.

356

7
7

10
10

pf
pf

15

ohms

120

MHz

15

9N33Q9
^www^,

= 10v;

CE

3
-w
*, A

= 1 m A; f = 1 KHz

2N3392 2N3393 2N3394

Forward Current Transfer Ratio hu

208

150

100

h,

6000

3400

2750

h..

14.0

10.0

7.7

.33

.225

.175

Input Impedance

Output Admittance
Voltage Feedback Ratio

xlO""

*'

s'
IK

?*

.01

.4

s
-*

^s '*
-- '

IOK

.6

.8

>

Ic

8IO

20

40

60 80 100

INmA

<^

,-=

v BE(SAT) v
2N33<92, 2N339 5, 2N3 394

10

20
C

/
I C BO

25" C

INC.)

IKHi

^mhos

100 -

310 TRANSISTOR NOISE

ANALYZER OUAN-TECH

LABS,

ohms
t

NOISE VOLTAGE AND CURREN1

VS l
2N3392,2N3393,:
Vc"5V TA =25 C
(INFORMATION FROPi

VCE(SAT) VS X C
2N3392.2N3393.2N339

VS TEMPERATURE
V C b 18 VOLTS

r-

2N3392, 2N3393, 2N3394

>
z

to

>

60

(i

40

Ic

60

80 100

INmA

.?

20

10

30

40

50

60

70

80

TEMPERATURE

IN

90

100

110

120

130

140

"C

VS ic
-8\f
Ta -25 c

Cjb & C b VS VOLTAGE

2N3392, 2N3393, 2N3394
f =IMHz
TA = 25-C

!N33 92
>N33 93
>N33 94

I
^c.

10

>s

.1

C C bo

(I

.2

.4

.6

.8

>

Ic

10

20

40

60 80 100

ft
I

INmA

V BE 0R VCB

357

2
IN

VOLTS

10

20

40

60
1

2N3392,

3,

40

2N3392.2N3393, 2N3394
hi.

Vc

10V

20
f =

IKh

hoe

h FE VS

TEMPERATURE
VC
IC

"re

mA

.b

hfe

~^__

.8

hie
;

f
i

-40 -30 -20

-10

10

20

30

TEMPERATURE

40
IN

50

60

70

80

90

.01

100

-04

.02

.06.08.1

.4

.6

Ic

"C

.8

INffl

40

20

8 10

280
260
h fe VS I c

240

TA

25*C

220
^

200

2N339 2

h fe

PARAMETERS VS TEMPERATURE

AT

2N3392

180

vc

iov

h fe A T IM Hz

h
f =

IkHz

160

140
.

120

~^N3*39 3

2N3393

h fe AT IMHz
1

h ffl AT

2N339

lf. T IM Hz

hoe

100

h fe

80

~~~2N3394

h fe

AT

hre

iHz

hie

-40 -30

^
.2

.4

-20

-10

10

20

30

TEMPERATURE

40

.6

40
IN

50

60

70

90

80

100

60 80 100

240

hoe>
2N3392

<n

O
>
o
o

//

l_^

a
E

2N3394

h *e

h fe_,

1
-6

a:

o
z

h
Hi

h fe VS I c

<
a:

Ta

PARA WETERS VS

V(3LTAGE
2N32 92, 2N3393, 2 SI3394

Ic

TA

f =

25"C

lmA
25C
IKHz

40

40

60

80 100

358

60

80 100

Silicon

Transistors
2N3395,6,7,8

The General

NPN

Electric 2N3395 through 2N3398 are

silicon planar passivated
transistors designed specifically for application in small signal industrial
amplifiers.

These devices are spread types which offer tightly controlled beta groups with
a
guaranteed distribution of groups. Each group is a 2 to 1 beta category and is
color coded.

The percent

of the total order to be shipped in each category is

on the back of this specification sheet. Significant savings
may be realized by designing equipment using all beta categories in proportions
compatible with these spread types.

shown on

the

absolute

chart

maximum

ratings:

(25C) (unless otherwise specified)

Voltages
Collector to Emitter

V
V
V

25

CEO

Emitter to Base

Collector to Base

25

Tl

!.

The specified lead

-*] .185

max

diameter applies to the zone

between .050 and .250 from
the base of the seat. Between 250 and end of lead
a

maximum

of .021

}*-

.260

MAX

diam

etet

is held. Outside of these

zones the lead diameter is

Current

not controlled.

Collector (Steady State)*

UTU

ma

100

I.

IN

INCHES

LEADS .017 tJJ

INOTE I)

Dissipation

Total Power (Free air at 25C)**

360

Total Power (Free air at 55C)**

250

-050+005
-IOO+ 005

mw
mw

Temperature
Storage

-55 C to

Operating

+ 150C
+ 125C

Lead Temperature, 1/16" 1/32"

from case for 10 seconds max.

+260C

STG

Determined from power limitations due to saturation voltage

mw/C increase in ambient temperature above 25C.

at

this current.

** Derate 3.6

electrical characteristics:
DC

(25C) (unless otherwise specified)

Characteristics

Sym.

=25V, I E =0)
=5V, I c =0)
ratio (V CE =4.5V,
2N3395
2N3396
2N3397
2N3398

Collector cutoff current (V CB

Emitter cutoff current (V

EB

Forward current
I
c =2 ma)

transfer

Min.

0.1

ua

*EBO
h FE

0.1

ua

90

500
500

55

500
800

4.5

10

55

359

Unit

CBO

150

Grounded-base, open circuit

output (V CE =10V) Collector
Capacitance
(I E =0, f=l mc)

Max.

pf

2IM3395,

,7,8

6,

electrical characteristics:
GUARANTEED DISTRIBUTION

Color

50-300
Yellow

90-180

55-110
Red

Code

Orange

35-65%

35-65%

10-60%

10-60%

5-35%

2N3395

2N339o

250-500
White

2 N 3397

0-15%

10-50%

10-50%

5-35%

2N3398

0-15%

10-50'!

10-50%

5-35%

transisior line generates product with parameter variations.

divided into three to five separate groups from the total

beta

is

On

the

shipped

spread

types,

General

when you order

the

Electric

type.

guarantees that

On

400-800
Blue

0-15%

General Electric Company's economy

lines the

line.

a certain percentage of each transistor group will be

As an example, suppose you order 1000

pieces of the

2N3396. You may

receive luO orange pieces (h HE =90-180) 600 yellow pieces (h FE =150-300) and 300 white pieces (h FE =250-500).
On the other hand, you may receive 600 orange pieces, 300 yellow pieces and 100 white pieces. This flexibility
allows us to balance order requirements against actual production types. The savings achieved is passed on to
you. If you can't use the spread types, you can still purchase our single line types such as the 2N3391, 2N3392

and 2N3393

at

extremely low prices.

360

BS1@ IS!

Silicon

Transistors
2N3402
2N3414
2N3638
The General

Electric Types
epitaxial passivated

2N3402-2N3405 and 2N3414-2N3417

absolute

maximum

2N3402.3
2N3414.15
Voltages

25

50

VCBO

25

50

500

500

Current
*

Ic

GES3638

NPN

2N3404.5
2N3416.17

VcEO

V EBO

Collector (Steady State)

(25C) (unless otherwise specified)

ratings:

Collector to Emitter
Emitter to Base
Collector to Base

2N3649-58 SEE CT40 SERIES

are
silicon
transistors intended for general purpose industrial
circuits. These transistors are especially suited
for high level linear amplifiers or
medium speed switching circuits in industrial control applications

planar

SEE

V
V
V

Dissipation

Heatsink

@ 25C

(2N3402-5)**
(5) 25C)t

Pt
Pt

900
560

25C)

Pt

360

65 C) J

Pt

260

Total Power (Free Air

(2N3402-5)

Total Power (Free Air

<ffi

(2N3414-17)
Total Power (Free Air

(2N3414-17)

mw
mw
mw
mw

NOTE 1: Lead diameter is controlled in the

zone between .070 and .250 from the seating plane.

Between .250 and end

max. of .021

is

of lead a

held.

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

Temperature

Storage
Operating

-55

to

+150

+ 150

Tj

Lead Soldering,

%2" from

case for 10 seconds max.

C
c

+260
REFERENCE UNLESS TQIEHANCED

^Determined from power limitations due

to saturation voltage at

this current.

*Derate

7.2

mw/C

fDerate 4.47
JDerate 2.67

increase in case temperature above 25C.

electrical characteristics:

mw/C
mw/C

increase in ambient temperature above 25 C.

increase in ambient temperature above 25C.

(25C)

(unless otherwise specified)

2N3402.3
2N3414.5

DC CHARACTERISTICS
(Vcb = 25V)
= 25V, T A = 100C)
Collector Cutoff Current (Vcb = 50V)
(Vcb = 50V, T A = 100C)
Emitter Cutoff Current
Veb = 5V)
Collector Saturation Voltage (I B = 3 ma, Ic = 50 ma)
Base Saturation Voltage (I B = 3 ma, Ic = 50 ma)
Collector Cutoff Current

(Vob

Min.

Max.

IcBO
IcBO
IcBO
IcBO
Iebo
Vce(SAT)

V BE

2N3404.5
2N3416.7
Min.

15

(SAT)

Vce

= 4.5V, I c =

ma)

llFE

0.1

Ma

15

/XBL

0.1

0.1

0.30
0.85

0.30
0.85

2N3402.4
2N3414,6

Forward Currant Transfer Ratio

Max.

0.1

V
V

2N3403.5

2113415,7

Min.

Max.

Min.

75

225

180

Max.

540

SMALL SIGNAL CHARACTERISTICS

Forward Current Transfer Ratio Collector Voltage,
Vc
4.5V, Frequency of measurement

V CE =

10V;

= lma;

Ic
f
Forward Current Transfer Ratio
Input Impedance

Output Admittance
Voltage Feedback Ratio

lKc; T A

1000 cps

75
2N3402
2N3414

h,

180
2N3403
2N3415

2N3404
2N3416

2N3405
2N3417

300
8300
20
.4

25C
h,
h,
h,

180
5100
14

330
9000
21

150
4200
10

h re

.27

.45

.2

361

ohms
/umhos

io- 3

2N3402-5
2N3414-7
r

1000 r
r

=iooc

450
1

IJ
VS

20

Ic^B

2N341 4

5V

~ VcE"
TA

2N34I6, 2N34I7, 2N3404, 2N340b

VCEISAT)VS X C

800

h FE

2N340

eoo

2N34I6

200

400

2 N 3404"

//

II

T* -25" c-

200

\\

\-LL

?.

fig;

m 10

40 608OI00

20

40

60 80 100

200

ela$ .0

200

400600800

600

500

2N34 14, 2N34I5, 2N3402,

<

N3403

VcEfSA-nVS i c
I C /I B = 20

E
5 300

*50
1

ji

11

1
200

-r5v

V CE -5V

-psi

ss

^^

77

2N34 ,

100

\
2N34I4

^
**

.6

.8

1.0

20

10

lc-MA

\\\\
M

2N3402
2N34I6

s-<

~r

\\

2N3404

ISO

^"
n

0.1

8 10

40 6080100

20

10

I c IN

200

400600000

MA

TRA NSFER CHAR AC TERIST ICS

T k =25C
(ALL TYPES)

/
/
/
"-4."S& ~S

*i<i

Oj

10

30

40

50

80

70

J
362

/ta

25

2N3402-5
2N3414-7

AND CobVS VOLTAGE

Cib

TA

IMC

Z5 C

\'\

\\
^\.

^,
^l^v

.8

*4

-^-Lj
-^<<6

20

10

/**

4.0
IN

V EB OR Vca

-40 -30 -20

-K)

0;

20

:C

4C

30

TMPrRATURE

30

SO

70

"

6.0

^^
^**I7

20

8.0 10

40

VOLTS

60 ~B0 100

IN "C

2N64I4
2N34I5

CONTOURS OF

C0NSTAIV T 'T

2N3 403

II

_ h

o.

PARAMETERS VS VOLTAGE
ALL TYPES
I C = IMA f

TA

w\

1KC
25C

o o
o

/
""

~y\

wl

~i
1

40

60

80

w\X
X

.6

1.0

8 10

'

20

40 60 80100

-MA

Ic

(VCE -I0V)

ALL TYPES
V c -10 V
f
-IKC
,h

TA -25C
l>r.

^^

2N34I6
2N34I7

C0NT01 RS

CONS ANT

405

2N;

II
o

t-

o o

o
o
(0-

ill-

o_ y sls-

k\38 J
Ay,

hf,

1
]

'

\H

"1S
10

-1
1

^7^-"
1

01

.02

.0-1

O 11 B

ifr

\-

'4

..6

fcO

f II )

cm mn

363

MC

'

_1__
2

.6 .8

/.
,
I

10

l r-MA

20

40 6O8OIO0

1000

Common

Typical

2N3402-5
2N3414-7

TA

//

220

s
'//

ISO

X*

60

V
y

'/

'

00

f
,

80
60

-30"C
STEP

200
2N34I7
180

2N3405
160

f 120

'

<^

" 100

80

40

MA
w/
///

'/A

.2MA/

>N34I6
>N34I7

^-

< I40

"lOO

(a

80

60

40

_
20

>*=

'

240
220
200
ISO

160
,

140

TA

/<,

-30C

220

t<
/'
YA
/-

STEP
200
>N34I5

',

>,
,
E

120

>

40

40

20

T~

20

v>

180

Ta- +I00"C
lb-

'y

STEP

y.

V
/

l40
120

100

6
Vce

2N34I5

2N3403

Y'

160

'
E

60

200

2N3 403

60

2N34I5

80

^~

220
STEP
2N34I4-

Y*
Y
'

100

/,

', s"

-~-

120

80

^--

10

140

100

V/

+ 25C

TA

160

'/,

240

Y S*
VV
/
/

v,

180

2N3403

'.-

X
<

240

**

6
V CE

2N3405

'//
120

/A '{'

160

2N34I7
2N3404-

'//

(a

180

2N3405

'

STEP

/,

200

'//

TA' + I0CC
lb" .2 MA/ -

/<
//

220

STEP

140

/S

+ 25-C

/ V,

220

i//,

200

240

240

I20
o

Curves

Characteristic

240

Emitter Collector Current

'

80
60

'

40

20
6

v CE

Common

Typical
''

ya

Emitter Characteristic Curves

i

=-30"C

Ta

2N34I6

it

2N3404

T,

2N34I6

^/

^
/

*IZ

'
^J
y

mIO

-io **

2N3404

<!2

y
/l

40

30

60

50

80

70

10

/,
'

'

/
//f
'/

=IO^A/STEP
2N34I4

2N3402

',,

<

/
y7
/
y7

^io

**

10

15

20

25

12

60

50

40

10

20

30

+ 25"C
A/STEP
>N34I4
>N34I5
>N3402

= 5/.

/,

y
y
/

Vce

364

50 60

40

25

<^

+ 100- C
5/iA/STEP
"

2N34I4
2N34I5

2N3402

/
/

40

80

7
'

30 35

70

TA
;'

l\
/ J,]

/.

20

'

i
i

\
15

s7
/.
10

'/,

\
70 80

30 35

2 N 3404

^y

//

s^

2N34I6

/J

""

y y^J ^
V

f,

40

T/

|,2

30

/ y, y /
y /A
Ay
y y/

t a =- 30*C
I

20

't

y/ ^

/,

AA
/ a y / /,
Yya
y 4

^A
s

20

T, = + IOO'C

'

s\

I
10

+ 25-C

10

15

20

25

P
\ 35

30

40

Silicon

Transistors
2N3662.3

3662 3nd 2

The

tuners.

MHz

maximum

absolute

? N

66 are
siHcon P lanar e P itaxial transistors designed
S
applications.
The units are suitable for use as oscillators in
units feature a typical circuit power gain of 19 db at 200

Jn edfiXf^W
h gh If
fre g" enc y
TTWF JSfiTi
UHF
television ?

ratings:

(25C) (unless otherwise specified)

2N3662

Voltages

V CBO
V EBO
V CEO

Collector to Base

Emitter to Base
Collector to Emitter

2N3663

18

30

3
12

12

volts
volts
volts

25

25

mA

Current
*

Collector (Steady State)

NOTE

1.

tad diameter

is

controlled in the

f/t Lu'ween

Dissipation

Total Power (Free air

Total Power (Free air

@ 55 C) **
@ 25 C)

Pt
Pt

120
200

120
200

mW
mW

ng

pia-ie

rut

;.'

.070 and 250 from the seatBetween .250 and end of lead a

021

is

held.

.500

SEATING

MIN

PLANE

Temperature

Storage Temp.
Soldering Temp. 10
Vie

Yz2"

Operating Junction

*Derate 2.67

-55 to

+125C

260

260

100

100

sec.

from case
T,

mW7C

for ambient above 25 C.

electrical characteristics:

(25^)

(unless otherwise specified)

Static Characteristics

Vcb = 15V)
= 85C)
Emitter Cutoff Current (I = 0, Veb = 2V)
Forward Current Transfer Ratio (Ic = 8 mA, Vce = 10
V)
Collector Saturation Voltage (Ic = 10 mA, I B = 1.0 mA)
Collector Cutoff Current (I E
(I E
0, Vcb
18V,

Breakdown Voltage, Emitter

Collector Open (I E
Breakdown Voltage,

Base Open
1

Msec,

(Ic

Typ.

Iebo

hpE

20

Max.
0.5
5.0

pA

0.5

MA

0.6

volts

MA

75

V CE(SAT)

to Base,

100 /iA)

BVebo

= 3 mA

volts

pulsed, pulse width

duty cycle)

Breakdown Voltage,

Min.

IcBO
Icbo

Collector to Emitter

(Icfco

1%

0,

TA

Collector to Base, emitter

2N3662
2N3663

100,aA)

BVcEO

12

volts

BVcBO
BVcBO

18
30

volts
volts

open

Dynamic Characteristics
Output Capacitance

Input Capacitance

= 0, Vce = 10, f = 1 MHz)

= 0, Vcb = 0, f = 1 MHz)
(Ic = 0, Veb = 0.5V, f = 1 MHz)
(I B
(Ie

Forward Current Transfer Ratio

(Ic
5 mA, Vce
10V, f

Power Gain (See Fig. 2)

(Ic
6 mA, Vce

100

MHz)

= 12V, f = 200 MHz)

2N3662
2N3663

Co,

0.8

C b

1.5
3.0

C. b

pF
pF
pF

hfe

7.0

10

Ap

12
15

16
19

db
db

AP

21

Power Output (See Fig. 1

(Ic
10 mA, Vce

= 12V, f =

500

MHz)

30

mW

Power Output (See Fig. 3)

(Ic
10 mA, Vce

940

MHz)

5.5

mV

Noise Figure
(Ic
1

mA, Vcb

12V, f

= 6V, f =

60

MHz) (Rg

= 400 12)

N.F.

365

6.5

db

'

2N3662, 3

COMMON

TYPICAL

EMITTER y PARAMETERS

= 45 MHz

= 100 MHz

= 200 MHz

v c ,.sv

"

5V/

/vc .mv

1
-vCE

Input
vC e l0

Admittance

/.

A^

t-

V^J^

vs.

<^ '

*"

9i.

'

,sv

,0V

lit

5 3

"c^i_--"
l. ==

IOV

^K^ ,-^/v-I5V

-^l^tin
V-IOV

> 4

v /

C'lOV
9i.

Avec

|Vj,

//

<^-< e -l5V/ ,-4^-v CE

/4i-iv

"1

-;
V SV
"

Collector Current

10

S
I,-

Yre

Reverse

-C0LLECT0R CURRENT

mA

Vce -IOV

vc E-' 5V

veE -sv

^b

t>M
1

Transfer
/cc

iov

Vce"5V^ V-IOV

-b r .

is v

Admittance

r- J

-VCC .I5V

vs.

-r _t :ss
1

Collector Current

HAN

HA

-Ti_L :s

.01

III!

2
Ic

10

20

15

-fc. L iSS

.)]

MM

10

THA

Mil

20

15

-COLLECTOR CURRENT -mA

-C0LLECT0R CURRENT -mA

10

MM
-5V^
UI20

1mo

~Sl IOV

-> ^ >

Vci

Admittance

"'i^

Vei 3V

V"

^
//

^
/^
/,

**

40

K>
-

a
9V

30

2
Sf.

v..sv

5
lu

v.s^\-<;

111

>

20

18

COLLECTOR CURRENT

13V

M -iov-~" v

Ic -

50

'

Z 50

-bf.

vs.

Collector Current

^VISV

-bf.

i co

S''<*
'"Vc-ISV

/^e I'lOV

70

P^V.|5V

Transfer

Ls

-v^^ti K)V

|eo

v c "IOV

v ISV^

20

15

COLLECTOR CURRENT -mA

Yfe

Forward

20

IS

10

20

13

COLLECTOR CURRENT -mA

MA

z.e

Vce'SV

Yoe

2.4

'CI

ru

Output

...

"^ ,.|5V

'"

i-"^b*

fc

Admittance

a
"
i-

vs.

Vc-3V/

*"

Collector Current

v.iov
^..isv

Vc-iov^

-v-H

1"

<M

f^-

tM

v'

M -I0V-

'*

1.2

1.0

1'

,S .
.4

sv

vCI

'
1

B
Ie

366

II

sv

V-IOV^

.15V
1

K)

-COLLECTOR CURRENT

IS

m*

20

IOV

TYPICAL
EMITTER "y" PARAMETERS

COMMON

2N3662, 3

VERSUS FREQUENCY

2N3662, 2N3663
Input Admittance

Yi e

y re Reverse Transfer Admittance

"VN

/
'

V CI
l

-4
-5mA

Ic

Vfcl

-lOv

3m *

-Br*

1
1

i"
i ~u
v

I
<

10 V

f 10

V>i.

<

'

/
-r

in

/
/

/
y\

30
100
FREQUENCY- MHi

500

1000
.01

40

10
I

yf e

Forward Transfer Admittance

400

100

1000

FREQUENCY- MHl

yoe Output Admittance

'

180

Jj

iso

120

ioo

"
so

>-

<c

3mA

Ic

20

\fcl

u^

-IOV

'

mA
OV
/

,0

1
o

1
/

1
I

_[_

|i

>5-

/
/

ii

'

^^
y
i-Pf
is_iP'
9<

-20
;

50
-

500

100

FREQUENCY

"

1000

III

SOO

MHl
I

1000

FREQUENCY- MHI

TYPICAL ELECTRICAL CHARACTERISTICS

Output Capacity
vs.

Collector Characteristics T A
__^_-

= 25C

Reverse Voltage Bias

= 100C

Collector Characteristics T A
f.Wm k^- .lOrnA^--

,14mA

.12m

ft

.09
f

.10mA

.08mA___

i
5

.06mA/'

MHl

E 8

-0

1.4

K
z

.OTmA^
.06

"i

1.3

.05mA___

.04mA

.04mA/
"

.03mA

/
I,

mA,

.OBmA^

.02mA^

.02 mA
'

im - .0
2

VC( -

COLLECTOR VOLTAGE - VOLTS

10

12

16

(6

20

10

-VOLTS

367

12

14

16

IS

20

tO

Vc,

COLLECTOR

12

14

V0LTA6E - VOLTS

(8

20

'

2N3662, 3

V CE(SAT)

h FE vs. Collector Current

vs Collector Current
-

t,
1

1
!

'kwc

25*C

-+-

/!/

ft

A7

>c"b

Contours of Gain Bandwidth Product,

ve

/
z^

,0

Collector Current

f j vs.

20

Mill T
MHi

e -

COLLECTOR CURRENT- m*

t
i

T EXPRESSED

i|i|

hf e vs. Collector Current, f

l$Xi\

//

40 MHz

1?

jr

kj_

i/V

hfe vs. Collector Current,

I vs^t
Ic

t
/i

COLLECTOR CURRENT

,3

So
* H

3V

O t

j"

t
I

IOOMHi
25'C

12

ISV

"
3V

(n

'

sB
;S

/^

^>-'

//^
'//

COLLECTOR CURRENT-

TEST CIRCUITS
.1-3,9 TURNS #16 TINNED

6 TURNS t" IS TINNED

COPPER WIRE l/B* OIA T/8'
LONG. TURN RATIO * 3 TO

1.2-

75pF

-II

M L- -=)

001/iF

OUTPUT 1MPEDJ

">"

output
MPCDANCE
son.

NOTES

COAX PLUMBING CONSISTS

OF THE FOLLOWING GR AIR

>

LINES OR EQUIV.;
2 TYPE 694 TEE
I

TYPE 874-OZO AT "

NE
TYPE B74-LA AD.
TYPE 874-WN3 SHORT

CIRCUIT TERM
TURNS #16 A W G WIRE,
3/8*0.0 ,|-|/4"L0NG
TURNS # 22 AW G WIRE.
3/l6"OD. 1/2' LONG.

2 2

3 9

500 MHI OSCILLATOR TEST CIRCUIT

Figure

(P

Figure 2

I
INBZA
1

'

5 f.-4.5 P F
|

"f<

1/ZW

3.3KO
I/2W

I/4X STUB
1

B2011

,6"

!s
V Jr

sion
1/4*

I/2W

IC

= .OOI>.F

i
8 ENAMELED, SECONDARY

CLOSE COUPLED Z TURNS *2B ENAMELED WOUND

ON Q. T0R0I0IS17E CF 102. GENERAL CERAMICS

940MHI OSCILLATOR TEST CIRCUIT

Figure 4

Figure 3

368

= 100 MHz

14

10V

-COLLECTOR CURRENT

CURRENT- mA

1/

,0

^
Ic- COLLECTOR

= 40 MHz

^,/25'C

>

in

A
s

O O o
O O o

IN

100*5^^^

I'

ZH^~

Silicon

Transistor
2N3721

The General

2N3721

Electric

is

NPN

silicon transistor intended for general

purpose applications. The planar passivated construction assures excellent device

stability and life. This high performance, high value device is made possible by
utilizing advanced manufacturing techniques and epoxy encapsulation.

maximum

absolute

ratings:

(25C) (unless otherwise specified)

Voltages

V
V
V

Collector to emitter

VcEO

18

Emitter to base

V EBO
V CBO

5
18

Ic.

100

mA

P T
P T

360
260

mW
mW

TsTG

-55

Collector to base

NOTE

Collector (steady state)

1:

Lead diameter

is

controlled

in

the

zone between .070 and .250 from the seating plane. Between .250 and end of lead a

Current

max. of .021

is

held.

Dissipation

Total Power (Free air

(a)

25 C)

Total Power (Free

55C)

air

Temperature
Storage

to

.500

SEATING

MIN
i_

PLANE

+ 125C
+ 125 C

Operating
*

ALL OIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

Determined from power limitations due to saturation voltage at

mW/C increase in ambient temperature above 25C.

this current.

** Derate 2.67

electrical characteristics:
DC

(25C) (unless otherwise specified)

Min.

Characteristics

Collector cutoff current:

(VCB =

18V,

(VCB =

18V)

TA=100Q

Max.

Units

CBO
CBO

|UA

15

jilA

'ebo

0.5

flA

(VEB=5V)

Emitter cutoff current:

Typ.

0.5

Small Signal Characteristics

Forward current
IC = 2 ma,

transfer ratio:
f

Ik

(VCE=10V,

Hzf)

h FE

660

60

Input impedance:

(VCE=10V,IC=2mA,

f=lk Hz)

h IB

ohms

15

High Frequency Characteristics

Collector capacitance:

f=l

(VCB = 10V, IE=0,

MHz)

C cb

4.5

10

pF

Gain bandwidth product:

(IC=4mA, VCB=5V)
t

Hz=Hertz, equivalent

120

ft

to cycles per second.

369

MHz

Silicon

Transistors
2N3843A.4A.5A

NPN

silicon planar,
Electric 2N3843, 4,5, and 2N3843A, 4A, 5A are
and converter applicaepitaxial passivated transistors designed primarily for
versions feature high signal to
tions in high performance A.M. radios. The
noise ratio in RF amplifier service.

The General

RF

absolute

maximum

(25C) (unless otherwise specified)

ratings:

Voltages

VCEO

30 volts

Vkbo
VcbO

30 volts

Collector to Emitter

Emitter to Base
Collector to

Base

100

Ic

Dissipation

Total Power ( 25 C Ambient)**

Total Power (55C Ambient)**

l. The specified lead

diameter applies to the zone
between .050 and .250 from

4 volts

Current

Collector (Steady State)*

NOTE

200
120

Pt
Pt

MAX *T

.260

the base of the seat. Between .250 and end of lead

maximum

mA

MAX

of .021 diam-

is held. Outside of these

zones the lead diameter is

eter

.075

MAX

not controlled.

mW
mW

U U

.500

IN

INCHES
I

30

TsTG

Storage
Operating
Lead Soldering Vm" Vk" from
case for 10 seconds maximum

to 125

T,

100 "C

T,.

260 C

from power limitation due

3 LEADS

(NOTE

I)

to saturation voltage at

this current.

.205

MAX

**Derate 2.67mW/C increase in ambient temperature above 25C.

electrical characteristics:

(25C) (unless otherwise specified)

Min.

(Vcb = 18V)
100C)
Collector-Emitter Breakdown Voltage (Ic = 1mA)
500 /iA)
Emitter-Base Breakdown Voltage (Ik

Forward Current Transfer Ratio

2mA)
4.5V, Ic
(Vce
2N3843.A
2N3844.A
2N3845,A

B V CEO

30

volts

volts

iIfe

Collector Saturation Voltage (Ic

VcE(SAT)

Output Capacitance (Vcb

Cb

2.0

Cib

10V,

Ic

= 2mA)
fT
fT
r'

1mA, Vce

12V,

R =
g

20)

N.F.
N.F.

6.0

N.F.

5.5

370

pF
PF
pF

8.5

db

10.2 db

= 2Mc, Ic = 1mA, Vce = 12V, R = 50)

2N3843A, 2N3844A, 2N3845A

volt

230 Mc
250 Mc
290 Mc
150 psec

60
90
120

fT

2N3843A, 2N3844A, 2N3845A,

2N3843, 2N3844, 2N3845
(f

4.0

.66

Gain Band-Width Product (Vce

2N3843.A
2N3844.A
2N3845.A
Collector Base Time Constant

= 2Mc, Ic =

15

Case Capacitance

Noise Figure (f

40
70
120

20
35
60

ht-E

= 10mA, Is = 1mA)
= 10V, Ie = 0, f = lMc)
(Veb = 0.5V, Ie = 0, f = lMc)

mA

BVebo

Input Capacitance

Max.

15 iiA

IcBO

Typ.

0.5

Collector Cutoff Current

18V, A
(Vcb

MIN.

ALL DIMEN.

Temperature

* Determined

185

db

2N3843A, 4A, 5A

TYPICAL
1.6

COMMON EMITTER

"Y"

PARAMETERS

Mc

T A =25 C

2N3843.A

2N38 44.A

lO.

......

:rr=

it

Vie

5V

VCE

IOV
15V

5V

2N3845.A
*

10V
15V

VCE

5V

V
15V
10

\\\'

VCE
5V

Input Admittance

VCE
5V

lie

10V
15V

vs.

VCE

HDV
15V

5V
10 V
15

*l.

Collector Current
(OUTPUT SHORT CIRCUIT)

bj.
I

ll

I c -C0LLECT0R

CURRENT-mA

COLLECTOR CURRENT-mA

i, -

Ic -

COLLECTOR CURRENT-mA

5V

VCE

1
'

IOV
15V

b oe

5V
15

Y oe

VCE
5V

Output Admittance
vs
Collector Current
(INPUT SHORT CIRCUIT)

w
z

-J

l0

VCE
5V

5V
IOV

IOV
15V

oe

\e

t>o.

IOV

15V

5V

io

IOV

9 oe

15V

s
<

t
o
'flo

i.o

0.1

COLLECTOR CURRENT-mA

-COLLECTOR CURRENT-mA

-COLLECTOR CURRENT-mA

"J *

sfifl

Vfe
Forward Transfer

^>f

*5

Admittance
vs

inn

4p

*!

SJ^

**

In

>f
*>

rf

i(

fe If

/FIIK

Collector Current
(OUTPUT SHORT CIRCUIT)

10

0.1
I

COLLECTOR CURRENT- mA

m^

1.0

COLLECTOR CURRENT- mA

I--

ffl
VCE

t>r

COLLECTOR CURRENT-mA

#h=

-b r

VcE

-b r

VCE

15V

HDV
15V

II'

V re
Reverse
Transfer Admittance
vs

SHORT

5V

IOV
15V

T
T

[).

<
T
T

{{j

1
in

CIRCUIT)

itt

ID

HI

Collector Current
(INPUT

0J
-L

lb

^.WCTtlSV

rr^

<KDV,I

'
r,

-8

II

5V

rf

~~

V^StlOyiSV

-r
ill

II

-C0LLECT0R CURRENT-mA

371

-C0LLECT0R CURRENT-mA

ll

-C0LLECT0R CURRNT-mA

'

2N3843A, 4A, 5A

TYPICAL

COMMON EMITTER

"Y"

PARAMETERS

262.5 Kc
T A =25 C
=

__

=r=

>
?

'ii

Vie
Input Admittance

2N384-5,A

2N3844.A

2N3843.A

5V

15V

IOV
15V

5V
15V

ta

ie

'>*>

vs.

Collector Current
(OUTPUT SHORT CIRCUIT)

5V

10 V
15 V

10V

=:

V CE

5V

3V

l.

10V

b je
!

-C0LLECT0R CURRENT-mA
l

20

10

1.0
I

1,-COLLECTOH CURRENT- mA

COLLECTOR CURRENT-mA

too

Y e
Output Admittance
vs
Collector Current
(INPUT SHORT CIRCUIT)

t:

vce
5V

Ji

iov
15V

|
)

<

' <:>
'

IOV

IOV
tsv

Vr.F
IOV
15V

IOV
15V

s
4

On

15V

5V

<

s
<

vct
5V

VCE
5V

st 'S

'

I
S

Ooe

%,

i.o

-C0LLECT0R CURRENT-mA

lc -

1,-

COLLECTOR CURRENT-mA

COLLECTOR CURRENT-mA

OK
-b

|-b fe Inpmho*

7Tl

i.

PP

'ij^'H
6

fc

-*.

^S

^i

te

Vfe
Forward Transfer
Admittance
vs
Collector Current
(OUTPUT SHORT CIRCUIT)

1
*ftf

lnnn

>^

-f/

*~

.*

a
<

\&s

ilil

100

_*

10

-7*
/

&

<

>4l

-K,^

9*i<]

(E

1000

10

'.

"
III

e-

I
H

-b e

CURRENT-mA

H*

>>re

Vc
5V

t>re

Vce
5V

IOV

IOV
15V

IOV
ISV

Y re

.-.-COLLECTOR

L.-C0LLECTOR CURRENT-mA

COLLECTOR CURRENT-mA

BV

Reverse
Transfer Admittance
vs
Collector Current
(INPUT SHORT CIRCUIT)

<
E

,
*

VCE 5V.IC

Vce*5V,K)V,I5V

tt

c-

-COLLECTOR CURRENT-mA

COLLECTOR CURRENT-mA

372

c"

COLLECTOR CURRENT-mA

2N3843A, 4A, 5A

TYPICAL ELECTRICAL CHARACTERISTICS

FORWARD CURRENT TRANSFER RATIO
TA

VS.

COLLECTOR CURRENT

-I

10V

ta"2 5'C

100

Tn

M .!0V

H::- QV

T*' 30* c
TA -25*C

120

T'2

a
40

T-30* C

*s

"

V-30"C

TTTT
-COLLECTOR CURRENT

-COLLECTOR CURRENT-

Ic-COLLECTOR CURRENT-

2N3843.A

2N3844.A

2N3845.A

GAIN BAND-WIDTH PRODUCT(fT)VS. COLLECTOR CURRENT

ts

S8S!gS|8|||i
20

1
J
1
-1-

S8S8

g III

rS

888

S S

S8

S S

r-

\
s

\\\\\ \

}\\\
'\\
V

\-\-

ll'lv
I

v.

vv
30

10

-COLLECTOR CURRENT- mA

Ic-COLLECTOR CURRENT- mA

Ic- COLLECTOR

2N3843.A

2N3844 A

COLLECTOR
SATURATION
VOLTAGE

2Mc NOISE FIGURE

CURRENT -mA

2N3845.A

INPUT & OUTPUT

CAPACITANCE
V B -V0LTAGE EMITTER TO BASE -VOLTS

v> B- 2 >-

2N3843,A
2N3844.A
A

2N364 A
2N384 A

s
)

17

V^-.OV

.15

/'

i_^m#

>

lfi*51

/
-v

^
~~~.

"it/i,-io*|||

2N3B43.A1

>
/

2N3644.A-

II

in

Ill

?
a

Ic-COLLECTOR CURRENT -mA

Ic-COLLECTOR CURRENT -mA

373

MD

25

VCB -V0LTAGE COLLECTOR TO BASE-VOLTS

35

Silicon

Transistors

2N3854.5.6

2N3854A,5A,6A

NPN

silicon planar
Electric 2N3854,A, 2N3885,A, 2N3856,A, are
epitaxial passivated transistors designed primarily for RF, IF and converter apreceivers. Selected high voltage units are available for
and
plications in

The General

AM

TV

FM

video amplifiers. (See typical BVceo)

absolute

maximum

ratings:

2N3854A, 5A, 6A

V CEO
V CEO
V EBO

18
30

2N3854, 5

VCBO

18
30

2N3854,

Collector to Emitter

Emitter to Base
Collector to Base

(25C) (unless otherwise specified)

6,

V CBO

2N3854A, 5A, 6A

volts
volts
volts
volts
volts

Current

FM-IF

30 dB GAIN AT 4.5 MHz

FM-RF GAIN OF 15 dB

TV VIDEO

IF

GAIN OF

21 dB

mA

100

Io

Collector (Steady State) t

STAGE GAIN OF 25 dB

1: Lead diameter is controlled in the

zone between .070 and .250 from the seating plane. Between .250 and end of lead a

NOTE

Dissipation

Temperature

Storage
Operating

Lead soldering, Mo Vs
case for 10 sec. max.

200
120

Pt
Pt

Total Power (Free air at 25 C) J

Total Power (Free air at 55C)j

Ts

-30 to 150C

Tj

100C

T,.

260C

mW
mW

max. of .021

is

held.

""T

from
.uir _ 00:

(NOTE

fDetermined from power limitations due to saturation voltage at this

{Derate 2.67 mW/C increase in ambient temperature above 25C.

electrical characteristics:

(25

C)(uniess

otherwise specified)

Min.

(Vcb

= 18V,Ta =

Forward Current Transfer Ratio

Voe

4.5V, Io

Base Breakdown Voltage (Ie = 500fiA)

Emitter Breakdown Voltage (Ic = 1mA)

Emitter

Collector

2N3854, 2N3855, 2N3856

2N3854A, 2N3855A, 2N3856A

(Ic

2N3854A, 2N3855A, 2N3856A

(Ic

Dynamic Characteristics
Gain Bandwidth Product (Vce

= 10mA, Ib = 1mA)

10V,

Io

(Vce

10V,

Ic

Input Capacitance

B VcEO
B V CEO

18
30

BVcBO
BVcBO

18
30

'

Ie

volts
volts

100
130
140

r b Cc

10V,

volts
volts

70
70

V CE(SAT)

ri/Cc
Tb Cc

volts

0.200

volts

350
450
500

MHz
MHz
MHz

90
90
90

psec.
psec.
psec.

= 5mA)

= 0, f = 1 MHz)
(Veb = 0.5V, Ie = 0, = 1 MHz)
(Vcb

It

2N3854, 2N3854A
2N3855, 2N3855A
2N3856, 2N3856A
Output Capacitance

BV EBO

fx

Base Time Constant

70
120
200

= 5mA)

2N3854, 2N3854A
2N3855, 2N3855A
2N3856, 2N3856A
Collector

15

0.1mA)

2N3854, 2N3855, 2N3856

Collector Saturation Voltage

Units

0.5

35
60
100

OFE
hFB

Base Breakdown Voltage

Max.

= 2mA)

2N3854, 2N3854A
2N3855, 2N3855A
2N3856, 2N3856A

Collector

Typ.

ICBO
IcBO

18V)
100C)

(Vcb

li

point.

Static Characteristics
Collector Cutoff Current

500
MIN

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

25
35
40

Cob
Clb

Case Capacitance

374

3.5

pF

16

PF

0.66

pF

rSEATING
PLANE

TYPICAL
EMITTER "y" PARAMETERS

COMMON

2N3854,

5,

2N3854A, 5 A, 6A

= lOO MHz

2N3854, A

2N3855, A

2N3856, A
fa+^EH

Vie
!~f-

Input

Admittance
vs.

Collector Current
5

1.0

.5

I C -COLLECTOR

CURRENT -mA

10.

""

1.0

-C0LLECT0R CURRENT-mA

Ic

10.

-C0LLECT0R CURRENT-mA

Ic

ama:

Yre

- V.5V
*._" zntA-iwtl

S J L rr^L:-Tt^iJvl[LiL--.q

Reverse
Transfer

Admittance
VcE'Svjov. iBv

vs.

t-

t-

'

'

VC E

'

5 V. 10V,

15

V^

__4. t

Collector Current

5
Ic

10

-5

"COLLECTOR CURRENT -mA

1.0

lc

"

p+pn^-

t-

-r-

UJ

Forward

;""

<

:
|

ln

-5 V. O.'fSV

-ft/" E

|-Qf 4

Admittance

'-~x

vs.

-C0LLECT0R CURRENT -mA

'

Transfer

-1

...

"

10

-COLLECTOR CURRENT-mA
I

Yfe

-|_

\\

Collector Current

<

i
\

CURRENT -mA

I c -C0LLECT0R

10

-COLLECTOR CURRENT-mA

Ic -

COLLECTOR CURRENT

mA

I
5[-

I-4--

^-^
T'n-i

I_l.:.

Yoe

-J

I i

i-4

*-!

-r-

'

i il

v t i5v[ 4 _,
j

.;

Output
Admittance
vs.

Collector Current
.5
IC-

COLLECTOR CURRENT -mA

I c -COLLECTOR

375

10

CURRENT-mA

Ic

-COLLECTOR CURRENT-mA

2N3854,

5,

TYPICAL
EMITTER "y" PARAMETERS

COMMON

2N3854A, 5 A, 6A

= 45 MHz

2N3856, A

2N3855, A

2N3854, A

Vie
Input

.VCF 'IOV

IO

Admittance

.::.-

VCE'5
VffiOV

bis

- =*ii3

*ce *5V

vs.

Collector Current

Ir -

-COLLECTOR CURRENT-mA

pH -b,,- - M
.~ Ll^
1

Vre

1T~\

,i

10

lr

..

~t.---

p_

10

COLLECTOR CURRENT-mA

w ~F4

yttfin~ 4B

n
3d
JfcE-'ovH

E:f~

-1=*-

l!v.|SV,

Reverse

t
!

v CE -'5v

Mi

Transfer
- -g re

Admittance

LESS THAN 0.05 mmh*

41 ~-

ImPI
w

'

!:t~:'-l
i-ttri
-guLESS THAN 0.05 mm hs _jj

vs.

~n

I.

Collector Current

I c -C0LLECT0R

wj05

- .....

LESS THAN

""""'

""'
i.

K>.

CURRENT-mA

0.05

I c -COLLECTOR

mmh

"""'

ib

CURRENT-mA

Yfe

Forward
3

Transfer

Admittance

VcE"5V,IOV,l5Vx;

5V,I0V. 15V

vs.

Collector Current

.5

I.O"

Ic -

'

"

K)

SO

10
Ic -

COLLECTOR CURRENT-mA

10

.5

COLLECTOR CURRENT-mA

I.0
Ic -

10

COLLECTOR CURRENT-mA

I
Yoe

^kx&.

Output
Admittance

Ft"ii

vs.

Collector Current
.5

1.0

10

Ic- COLLECTOR CURRENT-mA

376

.5

I.0

I_ -

IO

COLLECTOR CURRENT-mA

TYPICAL
EMITTER "y" PARAMETERS

COMMON

2N3854, A

2IM3854,

5,

2N3854A, 5A, 6A

MHz

10.7

2N3855, A

2N3856, A

Vie

Input

Admittance
vs.

Collector Current
6

..,

e
e

Yre

.5

I"

.
!

....

<

"t> r

-b, e

Reverse

"CI-5V

...

Q
,

.Vce ="0V

V cf 'j5V

10

COLLECTOR CURRENT - mA

Ic -

CE ' lOV-^

Transfer

vCE '15 V

Vcf -I5V

-iov

JE.05

Admittance

-gr

IfSS THAN 00i

~T"
j

j,

"iml

.:::

CO

>

vs.

-9 r

iLlk!

LESS THAN

ll

Collector Current

e
e 500

Yfe

Forward
Transfer

Admittance
vs.
5

Collector Current

Ic -

COLLECTOR CURRENT -mA

10
rc -

50

10

10

COLLECTOR CURRENT-mA

Ic -

10

COLLECTOR CURRENT -t

I
v oe

Output
^: /^fN-VcE

xs

Admittance

iov

t h-j-

H-

fe^vc .i5v4r:

vs.
i

ii

Collector Current
I.

Ic- COLLECTOR CURRENT

10

mA

I.

Ic

377

10

-COLLECTOR CURRENT-n

2N3854,

5,

COMMON

2N3854A, 5A, 6A

= 4.5 MHz

2N3856, A

2N3855, A

2N3854, A
U

TYPICAL
EMITTER "y" PARAMETERS
f

fliiVH

f^ltH

-4

Vie

'vC E

_VC E

l~

*IOV- =

Input

Vce^S V^-

ie

Admittance

iHiVcE-iov

-_-

_.,

s(P

rfJ

vs.

y9lt

Collector Current

3
I c -C0LLECT0R

10.

CURRENT -ml

y re

-1"

1
1

T
f

-b

3
-*>T

<

',

-*"

...

Transfer

hf -

t-

VC ,-5V-

J--v-ipv1

V-I5V

h_

-g r# LESS

THA

ho

3i

l~-

COLLECTOR

K>

CURRENT

mA

l- 4-

i-^^4

50

>*

l^j- T

Jj.u

-;--.-

+^ 4
-

'

1
i

ioo

50

V Eps.io.isyz:
!
i

^W

'

^ft

^s-

'

t
1

1^

p-i-

P
fcfj

CE 'S,IO,l5y^f_|_^

Sioo

&

f-h -

CURRENT-mA

^-COLLECTOR

H
500

10

-COLLECTOR CURRENT-mA

lc

u
<

II

5
1^. -

-Ore

>

Collector Current

>

CE - 3,10,13V,

A P"'

--

--{-

::
i

Admittance

CE .iov
y
VCE .|5V

-|

!*

\--~-

VCE -I5V

tt

vs.

Transfer

';.

Forward

T~

Yfe

~1

"

)'

--]-

<

Admittance

CURRENT- mA

-C0LLECT0R

Reverse

Ic

>

E S

COLLECTOR CURRENT -mA

Ic -

VCE

1
i

'

'

1,

'
i
:

11

vs.

;_:.L

OS

._
1

,::L.;t

Collector Current

k
.5

1.0

I c -COLLECTOR

;.

u
5

CURRENT

1.0

.5

10

Ic -COLLECTOR

mA

I.O

.5

10

CURRENT - mA

^-COLLECTOR CURRENT

I
Yoe
Output
Admittance
vs.

:M..._L_L.JJllL_^
5

Collector Current
S
I

10

.5

-COLLECTOR CURRENT- mA

1.

Ic

378

10

-COLLECTOR CURRENT-mA

Ic -

COLLECTOR CURRENT

10
-

TYPICAL
EMITTER "y" PARAMETERS

COMMON

2N3854, A
1

J_

I.O

5,

2N3854A, 5A, 6A

MHz

2N3855, A

2N3856, A

-I

v t

t"T

Vie

2N3854,

VfcE'lO*.

Input
-i

Admittance

\\Prp-
"ptE "sv

L^.

vs.

Collector Current

i
!

1.0

I0

10

Ic-COLLECTOR CURRENT-mA

Ir

10

-COLLECTOR CURRENT-mA

im

n-

-COLLECTOR CURRENT-mA

Ic

Yre

10

Reverse
Transfer

SS4

Admittance
:3T

vs.

Collector Current

mr.o

10

Ic-COLLECTOR CURRENT-mA

Ic- COLLECTOR CURRENT-mA

Yfe

1000

o 500

fSt-fiii

AT VCE -

15

J_UllL

.._Llh.
LO

.5

Ic -

10

COLLECTOR CURRENT-mA

^P

Forward
Transfer

Admittance
vs.

Collector Current

.5
Ic

10
5
10
50 IOO
-COLLECTOR CURRENT-mA

.5

Ic

1.0
5
10
50
-COLLECTOR CURRENT-mA

100

I
......

r~"

yoe

-t+

i~trr

*,.iy

Output
l0

Admittance

=p

^VcL'IOVj^

:^ L^^E-isva

flo.

3
1

vs.

3
V,

Collector Current

^_-j= -1-

IjO

"

-fj
_

rr z^
1

U--

10.

Ic

-C0LLECTOR CURRENT-mA

Ic-COLLECTOR CURRENT-mA

379

10

-COLLECTOR CURRENT-mA

'

2N3854,

5,

2N3854A, 5A, 6A

TYPICAL SMALL SIGNAL CHARACTERISTICS

Symbol

kHz, Vce

Characteristic

10V,

Ie

5mA

2N3854
2N3854A

2N3855
2N3855A

2N3856
2N3856A

h|e

Input resistance

454

741

1140

Output conductance

10.4

16.2

23.1

65.5

113

173

10.5

11.3

11.8

hfe

Forward current transfer

h re

Reverse voltage feedback ratio

SMALL SIGNAL
CHARACTERISTICS
VS. EMITTER CURRENT

ratio

CHARACTERISTICS
COLLECTOR VOLTAGI

/Ltmhos

a so

23"C

v*

"hot__

N.

hr

-N.

"rj/.

-hi.LX

hoa

If*^

AL . TYPES

"

\
1

"io^
-5mA _
KHz

*I

X10

TEMPERATURE

^i.

ohms

SMALL SIGNAL
CHARACTERISTICS
VS. AMBIENT

SMALL SIGNAL
VS.

Units

h e

Jv

,_

lfa-KJ V
1 fc-

25*

hi.
?.

K Hi

345

VCe "COLLECTOR

-EMITTER CURRENT -mA

IE

-50

20 30 40 50
VOLTAGE -VOLTS

8 10

50
75
25
"25
TA -AMBIENT TEMPERATURE - 'C

100

TYPICAL ELECTRICAL CHARACTERISTICS

i

FORWARD CURRENT TRANSFER

RATIO, h FE

vs.

COLLECTOR CURRENT
2N3856, A

2N3855, A

2N3854, A

245
1

--

III

II
<

llll

'llll
[III

if

N
\

ci

!
'

10 V

IU

lr

5j[j

-"

]'^

wjl
\\u

-2S

i^lll

Fr

'

>

llll

-ttt

<rz,.

'Tllir"

-*

*
.001

Zc

-COLLECTOR

H"

J
IT

f^

liQ^n

CURRENT - mA

II

oi
Ic -

COLLECTOR CURRENT-mA

380

Ic

~>^

VV

il

l|

.-

III

7*

'llrf

il

-C0LLECT0R CURRENT-mA

11

2N3854,

5,

2N3854A, 5A, 6A

TYPICAL ELECTRICAL CHARACTERISTICS

COLLECTOR CHARACTERISTICS
2N3854, A

20

60
100
COLLECTOR
VOLTAGE - VOLTS

2N3855, A

140

60

20

VcE"

2N3856, A

100

20

100
60
COLLECTOR
VOLTAGE- VOLTS

Vce- COLLECTOR

Vce-

VOLTAGE - VOLTS

COLLECTOR SATURATION
VOLTAGE
VS. COLLECTOR CURRENT

OUTPUT CAPACITY
REVERSE VOLTAGI

BASE SATURATION
VOLTAGE
VS. BASE CURRENT

VS.

BIAS

!
j

IZ

[X

1'.

.1.

-;

w~ /

ac

A
rr

g.09
(J
!

o
"

.08

/ TA

-30-C

.07

j,

10

0.5

10.0

VCB

Ic-COLLECTOR CURRENT -mA

50

2.0

VOLTAGE COLLECTOR

IM||

EXPRESSED

IN

MH

-XX

COLLECTOR CURRENT
2N3856, A

EXPRESSED N MH

J-

it:
tt-

O
J
V

^Y

O
Ic

at

o
6
5

P-

*
(C

_>

'

' $1 Is
o

s4si^

-B

>

CURRENT -mA

41

t:

vs.

fT ,

s
''-

"

2D

I a -BASE

2N3855, A

.|

30

VOLTS

CONTOURS OF GAIN BANDWIDTH PRODUCT,

2N3854, A

20

10

TO BASE

II
T
:~t:-lia\ v -4
r \
l/
\V
"-A

Pti
\

a
A \>A

VA^ YA

/ //

-COLLECTOR CURRENT-mA

o
i-

3
'

?l?<i

o
o o
Co o v

1-

i-

t-

\
\

\|

Ic

ilil 1

V \t
tUATr
i

1^

-C0LLECT0R CURRENT -mA

381

"

?g

o JQ O*
&

8^

2
ll

t;

II

Af
il.

o
L

0____

'I

&

h
-'-\

> A
\\
T

AT
A

V"

A\A w
\

/ //
-7

-^JA^
^

v:

[J

-^

r-^~-

Ic-C0LLECTOR CURRENT-mA

Silicon

Transistors

The

General

Electric

epitaxial, passivated

NPN

2N3858, 2N3859 and 2N3860 are

AM

designed primarily for

transistors

2N3858,9,60

silicon, planar,

radio I.F. and con-

verter applications.

absolute

maximum

ratings: (25C)(u nless otherwise

specified)

Voltages

Collector to Emitter
Emitter to Base
Collector to Base

Veto
Vbbo
Vcbo

30 volts
4 volts
30 volts

NOTE

l. The specified lead

diameter applies to the zone
between .050 and .250 from

100

Ic

mA

eter

Dissipation

Total Power (Free air at 25C)t

Pt

360

MAX
.075

MAX

the base of the seat. Between .250 and end of lead

a maximum of .021 diam-

Current

Collector (Steady State)*

185

is

MAX

held. Outside of these

zones the lead diameter

mW

.260

is

not controlled.

mr

.500

MIN

ALLDIMEN.

Temperature

Storage
Operating

Tstg
Tj

Lead Soldering,

Vis"

%2" from

TL

55 to 150C
125 C
260 C

IN

LEADS .017
(NOTE r
3

INCHES
2

-|

1 .050.005

U- .100 +

005

case for 10 seconds max.

*Determined from power limitations due

to saturation voltage at

this current.

fDerate 3.6

mW/C

increase in ambient temperature above 25C.

electrical characteristics:

(25 CC) (unless otherwise specifyd)

STATIC CHARACTERISTICS

Sym.

(Vcb = 40V)
(T A = 100 C)
Emitter Cutoff Current (Veb = 5V)
Forward Current Transfer Ratio Vce = 4.5V, Ic = 2mA)

Min.

Typ.

Max.

50

IcBO

Collector Cutoff Current

Units

NA

IcBO

10

mA

Iebo

100

NA

2N3858
2N3859
2N3860

iIfe
IVfe

Hfe

Base Breakdown Voltage (Ic = 0.1mA)

Emitter Base Breakdown Voltage (Ie = 0.1mA)
Emitter Breakdown Voltage (Ic = 1mA)

Collector

Collector

Collector Saturation Voltage (Ic

10mA,

DYNAMIC CHARACTERISTICS
Gain Bandwidth Product v'c= = 10 17
\

Ic

Ib

= 1mA)

Base Time Constant

B Vcbo

40

BVebo

volts

B V CEO

40

volts

It
It

= 2mA)
Output Capacitance, Common Base (Vcb = 10V, Ie = 0, f = lMc)
Input Capacitance, Common Base (Veb = 0.5V, Ie = 0, f = lMc)
=

0.125

volts

= 2mA)
It

(Vce

volts

V CE(SAT)

2N3858
2N3859
2N3860
Collector

120
200
300

60
100
150

10V,

125
140
170

250
250
250

65

150

psec.

2.0

2.7

4.0

pF
pF
PF

r'Cc

Ic

v-'ebo

Oibo

10
0.66

Case Capacitance

382

Mc
Mc
Mc

90
90
90

2N3854,

5,

2N3854A, 5A, 6A

TYPICAL

COMMON EMITTER
1=263.5 Kc

2N38S9
S

1
!

L4j

zrt=-^
ttih Jy^j

\-Jt-.

Vce

:r~

J*

vs.

di<^

*.

500

u-'-t-

p4i

-~t

*n

t~r^^

-)-

1000

500

-f1

100

Jpil

100

^T;
50

11

ii

-/

II.

fj

10

.SIS

10

1'^ 35Sr^

F-

-j-'-hj

fr

"Ti

pSi'"

^=

10

m*

::__

"

ls

'.

lili

i-

Li

^zr

1
1

X^

"

tf

:
;

SHORT CIRCUIT)

-LLui

Collector Current
(INPUT

COLLECTOR CURRENT

vs.

sv

Output Admittance

CE

iov

LLfflOIL

lt>^

W^"

:::

!ov
b

Collector Current
tOUTPUT SHORT CIRCUIT)

2000

15V

L ^v

!
1

1000

E
I

r
1

2N3860

*::
:

Input Admittance

vs. Ic

Ta = 2SC

2N3858

F5^

PARAMETERS

"y"

it
II
_!__!_

+-H+: --

/duvl
f'ii

TF

H-LLil

.
,

,
!

1-

--r

"
:

1!!!

ii

--

.L

'

,.

t'-^t

Vfe

/ ^
1-

/V

Forward Transfer

Admittance

"

7
~^~"~7^t

vs.

Collector Current
(OUTPUT SHORT CIRCUIT)

-+

.*'

/
^

'

~A^-I~/-

4t

"

ztf

-// t

-j

i.

,*

Seee=-eee1ee:
-LECTOR CURRENT

"1*

I
II
j

Yre

>,.

Reverse
Transfer Admittance

~Y
V

-5V

-1~

" '{"M:\.

l|
1

i
j

1
1
1

._..-...

LESS THAN

r.

__T

.\

~t.

-,

Collector Current

:Ji-l

r.

TT

vs.

1=

IQV n\l

_9i_

0.1

pmho

SEE
, lu.

"

>

I
i

(INPUT

SHORT

CIRCUIT)
i

!
i

383

COLLECTOR CURRENT

m*

COLLECTOR CURRENT


2IM3858,

9,

60

TYPICAL

COMMON EMITTER

PARAMETERS

"y"

vs.

Vce=10V, lc=2mA, Ta = 25C

2N3860

2N38S9

2N38S8

B--L-

TT
II

r--r- --tt

*~^TT]
V

yie
:~z=::

Input Admittance

-H

ill

:_}:?- ~^~~-~
-+T

^l
;

iTl---'

vs.

t.

Jt

:=:^|:=z::i.p

n^

LSmr

Frequency

--/'r^

(OUTPUT SHORT CIRCUIT)

::|--

:ri=-=:

~-~=t
rr

,]

1_.

-W
!
1

ZOO

Output Admittance
vs.

Frequency

~\--Z

..Ml
l[

f5
1

\--

P
=I=E

"

*'

IT

SHORT CIRCUIT)

/\~/^

>

(INPUT

_...

*i

4-

"

l"

= ==

f---=-1_

- ft--

~X

Forward Transfer
Admittance
vs.

v s-'<

Et^z

*'

T~HT|]r

Frequency

y^\--

h^"

(OUTPUT SHORT CIRCUIT)

flP

-b

1-

-."::

ti

:"

i
i

/
i

i
!

\\
;
1

-_:__

-.:.:l..

so

-h

pr.,u\~

-4

y
r

y
~

< 20

Reverse
Transfer Admittance

"

vs.

Frequency

-7^- _1.

rj!^

~p

=====
s

-i
-

~/%~'V
-

ft-u-i--

-|
_L

'

/_

(INPUT

j-*"

~i

"

SHORT CIRCUIT)

~f.: t-ii

+--

"::i:-y

Tilsf-

z|: _____^^E

j
2

__

\j^y
2
-

384

FREQUENCY

5
-

Mc

K)

20

2N3858,

GAIN BAND-WIDTH

60

9,

FORWARD CURRENT

PRODUCT

TRANSFER RATIO

vs.

vs.

COLLECTOR CURRENT

COLLECTOR CURRENT

2N3S68

2N38S8

Vcf .4.5V

ZN38M

TA - I00*C

r\

Ta'25'c

.2

.1

12

.5

COLLECTOR CURRENT -mA

Ic

,0(

>,

.02

.OS

SI

.2

.1

lc

2N3859

COLLECTOR CURRENT -

50

20

10

TA

"V
------

VCE .4 5V

lOO'C

.'

2N38S9

\
-\
Ta- 23*C

14

.01

.02

.05

.2

.1

7-L^

\X

-ur
G \^

COLLECTOR CURRENT

S-rTA

33*C

"'

.5

k\ \-^y\i \\^
12
i

tl\

IOO

mA

2N38S9

Ml

2N3859

^
v

V-SB'C

_..

s,

0'

02

.03

.2

.)

.3
I

mA

"

COLLECTOR CURRENT

10

2D

30

100

-ml

2N3860
2N3860

18

2N38E0
16

II

4-

|[

"'
"'

"t

->

--L

l-

ill
.01

.02

.05

\
.2

.1

<

v
jn\t^z.
^z/
V i^\
JN\ ^;^

VT

\\

.">

<

is

"TT'

n\

1=0

.^
l(

"

-tttt

\
ZN3860

g
2

"i"X"
L- Vzzi

4J-

10

V 4.3 VOLTS
CE

Tt

~TT"

14

12

llf

^V

|
^

\\

^~

-....

.5

COLLECTOR CURRENT

.01

mA

.02

.05

5
I,

385

COLLECTOR

CURRENT

mA

10

20

50

100

2N3858,

>

60

9,

TYPICAL ELECTRICAL CHARACTERISTICS

'CBO
INPUT AND OUTPUT

vs.

VS.

TEMPERATURE

CAPACITANCE

TEMPERATURE

\
1

VJ.

-4.5V

'

IOMA

~~r~

2N3856, 2N3859,

70V
2N3858
2N3659
2N3860

2N3860
1
I

'
j

-;:;KB8 h

'"~~
-""

"^""Z"
J
~
->&*"
i i- - if if-i
TiitixX'^ZL
_^_
iV m
^_iti
X if
~
?N,
in
iX+ -u- -it
1

_i

59.60

--

...

"

Z5-C

~X-

100

i ml
ni
"i

VALUES

FE

^
2N3B56

"

"

"

i~i
-

VOLTAGE

COLLECTOR TO BASE

__

VOLTS

t"

2N3B60
240

2N3B59
150

_ii_L

BIENT TEMPERATURE

MBIENT

TEMPERATURE

*C

COLLECTOR CHARACTERISTICS
2N3860

2N38S9

2N386S
II

^Z

,*/
10

v&/

10

f/

Is

i-

t-

^ ''aO/
^ '^ s^

2-

Ml

'

(E

hi

:>

'

/V /
'V
r

7<

IE

SV

ll

/yj

/y
'r

UJ

5/
"^\*s
*"

~l

-*

CE

d
o
V

z
"
IE

p/

o
H 4

Jj2

7^

--- -^jO^

o
o

V CE

20 40 60 80 100

20 40 60 80 100

20 40 60 80 100

VCE -VOLTS

VCE -VOLTS

VOLTS

TYPICAL SMALL SIGNAL CHARACTERISTICS

1=1 Kc,
Symbol

Characteristics

h.

hf e

h
h

PARAMETERS

vs.

u
=

'

2mA, Ta = 2SC
2N3858

2N3859

2N3860

Units

1680

2480

3660

8.2

110

11
175

ohms
Mmhos

275

8.2

10.5

14.6

Input Resistance
Output Conductance
Forward Current Transfer Ratio
Voltage Feedback Ratio

hie

lE =

Vcb=10V,

Vce

PARAMETERS

vs.

2.4

PARAMETERS

vs. Ic

2 N 3860

k-^x

S!I

'->*,-

r~~

Z '

"^Jrv

*_

"

xio- D

TEMPERATURE

2N3858
2N3859

17

^,

_,^

i-

16

Zj

s
o

vJz
/'^

-\2KMM
.

r.,,

HtX^
L

i-o

0-9

h iB, h ro

f.

iSil^^wMsa.^

Q.
]

VCE

10

COLLECTOR

15

20

25

30

TA ~

'

""^n:

WMM

AMBIENT TEMPERATURE

*C

Ml

VOLTAGE - VOLTS

386

IT

^
/*

A.

"it

Z?f
<#*'

'*!

zNsseo

h f

S.-sJX

tNM

( -

E
s

COLLECTOR CURRDfT

Silicon

Transistors
2N3858A.9A

The General

Electric 2N3858A and 2N3859A are

silicon, planar, epitaxial,
passivated transistors. They are well suited as high voltage,
high gain amplifiers
and switches. Useful applications include drivers for audio output stages,
high
level video amplifiers and output stages of operational
amplifiers. Selected higher
voltage units are available.

NPN

absolute

maximum

ratings:

(25C) (unless otherwise specified)

Voltages

Collector to Emitter

VcEO

Emitter to Base
Collector to Base

60

V BBO
V CBO

Current

Collector (Steady State) *

volts
volts
volts

60

mA

100

Ic

Dissipation

NOTE

1:

Lead diameter

ing plane.

Pt

360

Lead Soldering,

Vie"

TsTG
T,
V32"

from

55 to 150 C
125 C
260 C

Tl

case for 10 seconds max.

of lead a

held.

500
MIN
i_

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

*Determined from power limitations due to saturation voltage at this current

**Derate 3.6 mW/C increase in ambient temperature above 25C.

electrical characteristics: (2 5^C)

is

mW

Temperature

Storage
Operating

controlled in the

Between .250 and end

max. of .021

Total Power (Free air at 25 C) **

is

zone between .070 and .250 from the seat-

(NOTE

SEATING

PLANE

I)

(unless otherwise specified)

STATIC CHARACTERISTICS
Sym.

= 60V)
(T 4 = 100C)
(Veb = 6V)

Collector Cutoff Current

Emitter Cutoff Current

(Vcb

Min.

Ty P

= IV, Ic = 10 mA)
(Vce = IV, I c = 10 mA)
(Vce = 4.5V, I,. = 2mA)
(Vce = 4.5V,
= 2mA)
Base Breakdown Voltage (Ic = 0.1 mA)
(V CE

Iebo

0.1

IlFE
IIfe

Hfe
UFE

I,',

Emitter Base Breakdown Voltage (I 0.1 mA)

Emitter Breakdown Voltage (Ic = mA)
Collector

BVcbo
BVebo
BVcEO

Collector

= 10 mA, Ib = 1 mA)
= 10 mA, Vce 1 volt)
(Ic = 10 mA, I B = 1 mA)

Max.

50
10

Forward Current Transfer Ratio

2N3858A
2N3859A
2N3858A
2N3859A

IcBO
Icbo

60
100
60
100
60

Units

NA
nA
/mA

120
200
volts

volts

60

volts

Collector Saturation Voltage (Ic

VcE(SAT)

Base Emitter Voltage

V8E(Drlve

.68

Vbe<sat)

.70

.78

volts

125
140
65

250
250
150

MHz
MHz

2.7

4.0

Base

Emitter Voltage

(Ic

0.125

volts
volts

DYNAMIC CHARACTERISTICS
Gain Bandwidth Product (Vce

10V,

Ic

= 2 mA)

2N3858A
2N3859A

fr
f T/
Tb'Cc

Base Time Constant

(Vce = 10 V, Ic = 2 mA)
Output Capacitance, Common Base (Vcb = 10V, I E = 0, f = 1 MHz)
Input Capacitance, Common Base (Veb = 0.5V, Ie = 0, f = 1 MHz)
Collector

v^cbo

Cibo

Case Capacitance

90
90
2.0

10
0.66

387

psec.

pF
pF
pF

2N3858A, 9A

GAIN BAND-WIDTH
PRODUCT

FORWARD CURRENT
TRANSFER RATIO
vs.

vs.

COLLECTOR CURRENT

COLLECTOR CURRENT
2N3858A

2N3858A
O

O
t

ID

CO

o
O

o
<S

<

280

2N3858A
240
VC E

"

4.5V

't

f
X

it

2N3858

200

It

LI

it-

-ti-

T
i
1

160

TA

"

100 *C

T..25-C

\^

60

TA =-33'C
40

^
Ic

.02

.01

.05

tO

50

20

t"
\
.5

.2

.1

Ic

05

.02

.01

-tV

liUIu\
v
JH
12

14

J
y\

ff-

- COLLECTOR

CURRENT-mA

100

-COLLECTOR CURRENT-mA

2N3859A
2N3859A
f2

O
CM

(0

St

o
2
2
8
-
CM
tP
00
eg
2

o
pj

0
T- 00* c
II

VCE -4.5V

2N3859A

2N3B59A

200

__..

4-

- rt

25*C

Lt-r

H44
tu_
4U- v

tw

40

.02

.02

.01

.05
Ic

COLLECTOR CURRENT

10

.05

L_
.01

.5

.2

.1

20

iv^12

COLLECTOR CURRENT

'--y
.

mA

VnE(DKIVE)

VbE(SAT),

OE(SAT)

vs.

vs.

Collector Current

Collector Current
85

,'.

ti

60

/ P>

^/

2 N3B 58

til

A--

.20

B59

"i

VV

^ VC LT

X
a

"

=il
--^>

2N3B59A

COLLECTOR

CURRENT

388

COLLECTOR

CURRENT

mA

TYPICAL ELECTRICAL CHARACTERISTICS

vs.

\fc

4.5V

VS.

CAPACITANCE
VEB

'

EMITTER TO BASE

VOLTAGE

9A

'CBO

AND OUTPUT

INPUT

TEMPERATURE

2IM3858A,

TEMPERATURE

VOLTS

IOMA

2N385.SA.2N3859A
>fc

-60V

2N3858A
2N3859A
-

'*

2X3659
2N3858A

6
i

\
/

^'
'
\

^ -j

/
/

Cnh

2N3858A,9A

-1
23*C

J\

VALUES

h FE

^'".SV^-IOMA

/
;

2N385BA

ZN38S9A

(00

ISO

20
VCB

1
I

TA

AMBIENT

TEMPERATURE

VOLTAGE

COLLECTOR TO BASE

25
-

30

VOLTS

TA - AMBIENT TEMPERATURE

"C

COLLECTOR CHARACTERISTICS
2N3858A

2N3859A

II

10

II

4/
'&/

9
8
7

6
5

' J}s
'

^v

19

/
^ jy /

a.

'

a:

T
'*>/

a/

10

-j*
22-

'

LlJ

15,

=!

<^

/
'

ixi

^/

2
I

5 _

-J

20 40 60 80 100

20 40 60 80 100

VCE - VOLTS

VCE -VOLTS

TYPICAL SMALL SIGNAL CHARACTERISTICS

f
1 K c V CE
10V, B
2mA, TA
25C

Symbol

hoe
hfe

h
PARAMETERS

VcK

VS.
i

2N38S8A

2N3859A

1680

2480

Input Resistance
Output Conductance
Forward Current Transfer Ratio
Voltage Feedback Ratio

h.

Characteristics

PARAMETERS

vs.

TEMPERATURE

8.2

11

110

175

8.2

10.5

Units

ohms
jumhos
5

XIO

PARAf AETERS V i.

Ic

2N3858A
2N3859A

,./

'"-v^

'

/y'.

_I
_I

-4

S p*<1

"

n, t

f-

\
i

,.\

h ie, h
re

h fe

==

-^
'

2N3BSSA

**/

' -

N'N"
h

'z //

hn

2^
ga-

'"-

= :::

^m^-"

h fe
t,
\

25

VCE

*50

73

IO
-

COLLECTOR

15

20

25

30

*
6
8
15 2
3
4
Ic-COLLECTOR CURRENT-mA
1

VOLTAGE - VOLTS

389

--

s;
_,,_.

/
/f,.

h ie

^^ii

TYPICAL

COMMON

EMITTER "y" PARAMETERS

2N3858A,9A~]

Vce=10V
2

mA
II

If

250 KHz

II
iooo

ff
'i.

kv

Input Admittance

Input Admittance

b
l.

4'\

,00

vs.

vs.

Collector Current

Frequency
(OUTPUT SHORT CIRCUIT)

(OUTPUT SHORT CIRCUIT)

1

-44+4t,-1-4-. T4

JUJ

ii

---

Output Admittance

Mw
-X

"0-

-=1

Output Admittance

?tiT

'7\

vs.

Frequency
(INPUT SHORT CIRCUIT)

jJi

50

1-1

vs.

Collector Current

Kf

,0

f
B

(INPUT

SHORT

CIRCUIT)

lil

=F4>=f

4~^

400
/

~f

,.

-r^i

Yfe

Yfe

bu

.u

Forward Transfer
Admittance

/
1

Forward Transfer
Admittance

i^
LO
*.

-A

vs.

vs.

"t
'

Collector Current

Frequency

H r?

(OUTPUT SHORT CIRCUIT)

"

(OUTPUT SHORT CIRCUIT)

/
i

FREQUENCY

- Mc

BIO
Ic

60 100

ZO

COLLECTOR CURRENT

mA

I
!

Yre

Yre

CE

-1^"

Reverse
Transfer Admittance

-SV,

10V,

15V

'

Reverse
Transfer Admittance
vs.

vs.

>

Collector Current

Frequency
(INPUT SHORT CIRCUIT)

-fl

f,

LESS THAN

0.1

Jl

(INPUT SHORT CIRCUIT)

390

COLLECTOR CURRENT

Silicon

Transistors
2N3877.A

The General Electric 2N3877A and 2N3877 are

silicon planar passivated
transistors designed for high voltage applications. The 2N3877A
features a guaranteed minimum
of 85 volts. It is especially useful for

NPN

BVCEO

driving high voltage

indicating devices.

absolute

maximum

ratings:

(25C)
2N3877A

Voltages

Collector to Emitter (at 1 mA)

Emitter to Base (at 1 mA)
Collector to Base (at 1 mA)

2N3877

V CKO

85

Vkbo

4 volts

VcBO

85

70 volts

70 volts
hote

Current

Collector* (Steady State)

mA

50

Dissipation

Total Power (Free air

Total Power (Free air

@ 25 C)
@ 55C)

Pt
Pt

360
250

T,

-55C to
-55C to

200
100

The specified lead

1.

.185

MAX

diameter applies to the zone

between .050 and .250 from
the base of the seat. Between .250 and end of lead

maximum

of .021

diam-

eter

is held. Outside of these

zones the lead diameter is

raW
raW

not controlled.

Temperature

Storage
Operating

Lead Soldering,

Vic" to V32"

from

TL

case for 10 sec. max.

*

Determined from power limitations due to saturation voltage at

2.67 mw/'C increase for temperature above 25C.

"Derate

electrical characteristics: (25C)

Collector Cutoff Current

(Vcb

70V, Ta

(Vcb

ALL DIMEN.

C
C
C

3 LEADS

(NOTE

IN

INCHES

+
.017 '?
01

I)

this current.

(unless otherwise specified)

Min.

= 70V)

Max.

Typ.

IcBO
IcBO

100C)

Forward Current Transfer Ratio (Vcb

+ 150
+ 125
+ 260

= 4.5V,

Ic

= 2 mA)

0.1

10

hFE

= 1 mA, Ic = 10 mA)
= 1 mA, Ic = 10 mA)
Product (Ic = 10mA, V c 10 V)

mA

20

Collector Saturation (I B

VCF.(SAT)

Base Saturation Voltage (I B

V BE(SAT)

Gain Bandwidth

fT

1.0 volts
.9

volts

Mc/s

160

TYPICAL APPLICATIONS

+ 170
; i5Kfl

lOOKfl

NIXIE

680KA

TUBE

9999999999'
'

68 K

16X2 1/

IMft

...rtih
NEON DRIVER

VA
i6x;
6X2

fi

68K
iiioK

iok;;

NIXIE DRIVERS

391

2N3877,

A
200
h FE

VCE

VERSUS

VOLTS

= 4.5

160

120

,\00
\

20

80

40

T*

7
^1 3

1000

^--

55

COLLECTOR CURRENT- mA

60 80 100 120
V CE -VOLTS

40

VERSUS AMBIENT TEMPERATURE

AT V CB 70 VOLTS

Icbo
2.0

VERSUS TEMPERATURE
NORMALIZED TO 25"C VALUE

h FE

10

(0

a.

E
o

/
I

/
/
0.1

I
-65

-35

-5

25

55

85

105
0.01

-AMBIENT TEMPERATURE - C

0.001

-75

-35

TA

392

85
45
AMBIENT TEMPERATURE -"C

125

Silicon

Transistors
2N3900.A

The General Electric 2N3900 and 2N3900A are NPN silicon

planar passivated devices
intended for low noise preamplifier applications. The
planar passivated construction
assures excellent device stability and life. These high performance,
high value transistors
are made possible by utilizing advanced manufacturing
techniques.

absolute

maximum

ratings (25C)

unless otherwise specified

Voltages

Collector to Emitter

Emitter to Base
Collector to Base

V K

18

V HBO

VcBO

18

V
V
V

NOTE I: Lead diameter is controlled in the

zone between .070 and .250 from trie seating plane.

Between .250 and end of lead a

max. of .021

is

held.

Current

Collector (Steady State)

">

100

mA

360
260

mW
mW

Dissipation

Total Power (Free Air

Total Power (Free Air

@ 25C)
@ 55 C)

<2)

Pt
Pt

<=>

ALL OIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

LEADS

(XT*002

Temperature

Storage
Operating

T.

Lead Soldering, Jfs" Xt"

from case for 10 seconds max.

-55 to

+125

T,

+ 100

T,.

+260

(NOTE

C
C
C

I)

Determined from power limitations due to saturation voltage at this current.

Derate 3.6
C increase in ambient temperature above 25 C.

mW

electrical characteristics

(25C)

unless otherwise specified

Min.

Collector Cutoff Current

(Vcb

18V)

(Vob= 18V, T A

100C)

Typ.

Max.

Icb
ICB

10

I,;b

.1

.1

/tA

Emitter Cutoff Current

(V EB

= 5V)

Forward Current Transfer Ratio

(Vcb
4.5V, Ic
2 mA)

=
=
SMALL SIGNAL CHARACTERISTICS
Forward Current Transfer Ratio
(Vce = 10V, Ic = 100 M A, f = 1 kHz)

llFE

250

hr,

170

u.A

500

200

Input Impedance

(Vce

10V,

Ic

= 2 mA, f =

IE

= 0, f = 1 MHz)

kHz)

h lb

ohms

15

Output Capacitance

(Vcb

10V,

C,

2.0

12

pF

Gain Bandwidth Product

(Ic

= 4mA, Vcb = 5 V)

NOISE

(wide band 15 cps to 10 kHz,

Equivalent Noise Bandwidth
Noise Figure
(Ic

'

'

100 M A, Vce

4.5V,

minimum
Type 2N3900A only.

of

95%

Typically a

Rg =

15.7

ft

160

MHz

NF

1.9

dB

kHz)

5000 ohms)

of the distribution

is

above this value.

393

2N3900,

TYPICAL CURVES

2N3900 AND 2N3900A

350

h VS I c
VC 'I0V

(IKHl

VS

h FE

,-c

T..25-C

T- 25'C
-04

.02

.01

.06 .08

.2

.1

.6

.04

.02

.01

.06.08.1

.2

.4

.8

10

20

nA

I c IN

20

10

IS

T
7J>
-*

VOLTAGE

<c

idI e-2mA, .ImA.jCHffiA

VS

T CB0 VS TEMPERATURE
V CB -I0V

mm
25*C

12

//

J^
yj
~7

^/_

v>
a.

J^_

X
<
z
<

_j_

10

T
T

.8

.6

~^_

'

.2

-40

-20

20

40

60

80

100

25C

20

34567B9db NOISE

60
40
TEMPERATURE IN'C

80

100

FIGURE

III

1
1

ho/

V c -IOhr

TA

"Nvhl

25-C

"hu"
h

"

^hT.

h|,

h .

h,

I20K0HM5
-l MHOS
74 XIO" 3

26

hl.

*f

10

20

40

60 80 100
Ic

200

.02

400 6O0 BOO 1000 2O0O

.04 .06.080.1

0.2

0.4

I c IN IDA

M A)

394

0.6 0.81.0

2.0

4.0

6.0

8D

IOjO

K)

20

Silicon

Transistors

The General
for general

and

ft,

Electric

2N3901

an

is

low signal

industrial

NPN

silicon

planar transistor characterized

level application.

It

features high current gain

and low leakage current and collector capacitance. The planar construc-

tion assures excellent parameter stability with

maximum

absolute

life.

ratings (25C)

unless otherwise specified

205

Voltages
"

Collector to Emitter

Vcko
Vebo
VcBO

Emitter to Base
Collector to

Base

18
5
18

V
V
V

Current

Collector (Steady State)

0)

100

mA

360
250

mW
mW

.190

@ 25 C)
@ 55C)

e>

PT

<2)

Pt

Lead diameter is controlled in the

zone between .070 and .250 from the seating plane. Between .250 and end of lead a
max. of .021 is held.
1:

.075
.055

T,

Lead Soldering, X," &"

from case for 10 seconds max.

55
55

Tt

to

+125

innr
ALL DIMEN. IN INCHES AND ARE
REFERENCE UNLESS TOLERANCED

to -f-125

+ 260

determined from power limitations due to saturation voltage at

Derate 2.67 mw/ C increase in ambient temperature above 25C.

electrical characteristics

(25C)

.500

SEATING

MIN

PLANE

.050 .005

LEADS

*"'

-.001

(NOTE
>'

-265

_i

C
C
C

* 225

Temperature

Storage
Operating

'

".165
NOTE

Dissipation

Total Power (Free Air

Total Power (Free Air

.199

I)

this current

unless otherwise specified

Min.

Collector Cutoff Current

(Vob = 15V)
(Vcb = 15V, T A = 100"C)

IcBO
IcBO

Typ.

Max.

0.2
.013

10
10

nA<*>

Emitter Cutoff Current

(Vb

= 5V)

Iebo

Forward Current Transfer Ratio

(Vcb,
4.5V, Ic
2

= mA)

0.1

hpE

360

h,.

350

Cob

4.5

mA

700

SMALL SIGNAL CHARACTERISTICS

Forward Current Transfer Ratio
(Vce
4.5V, Ic
2

mA,

kHz)

Output Capacitance

(Vob

= 10V, Ie = 0, f = 1 MHz)

10

PF

Gain Bandwidth Product

(Ic

= 4 mA, Vcb = 5V)

200

f.

NOISB
where en
:

are transistor noise voltage and noise current as obtained in Fig. 8

the bandwidth in cycles
4KT 1.66 X 10""

'"

in

is

Optimum generator
To 10% LTPD

resistance for

minimum noise,

395

R t

= _rL

MHz

2N3901
1.6

h^

NORMALIZED

VCE .4.5V
-25*

IOOO

I,

.(

Fig. 1

16

.|b

c cb

.ImA.jOlmA

'

'

I
<

.A

'<,,

m*

_1_

.8

T
T

.4

.2

'

.3.6. SI
20

SO

40
CO
TEMPERATURE W"C

Fig.

IN

PARAMETERS VS TEMPERATURE
=

1mA

f =

1KC

IC

^1 *s
1
I

MM

NORMALIZED h PARAMETERS VS
Ve .K>

>-/

Mc

N <^

^r"

r<
a

h a i = 17

h
.

10

20

30

40

540

50

60

hh

Fig.

IZOKOHMS

M -N|> MHOS
-*

h,,

>(

I XIO

70

80

90

100
joi

TEMPERATURE

T.

X1C

ii

-40 -30 -20 -10

Kohms

M =52/1 mhos

jm

.04

.ososai

oi

0.4

IN*C

Fig.

396

oeaato

tx>

40

uiaim

V E1

VC
Fig.

^
vc iov

KK)

S
h

^.

/
/

7*

i B .o

-I

Fig.

12

^ j[

/
/

d
.V

"

*CiO VS TEMPE ATURE

z"

72
Sx
Tfc
I e >2nM,

l-IMC

AND
VS VOUTAG E

IN

W1-TS

K>

Silicon

Transistors

2N3903
2N3904

The General

Electric

2N3903 and 2N3904

are silicon

transistors designed for general purpose switching

maximum

absolute

ratings:

NPN

planar epitaxial

and amplifier applications.

(T A = 25 C unless otherwise specified)

VOLTAGES

I.

VCEO
Vcbo
VEBO

Collector to Emitter
Collector to Base

Emitter to Base

2.

40
60

Volts
Volts

SYMBOL

Volts

TO-92

CURRENT
Ic

mA

200

DISSIPATION

fb

.4
.4

TA < 25C
Factor T A > 25C

Derate

PT
PT

180

2.41

Ll

mW/C

2.8

4.4 5

m Watts

350

7
7

e
et
J

Total Power

4.3 2

*b2

*D

Collector

MILLIMETERS
MIN.
MAX.

L2

I.I

TEMPERATURE

.4

8 2

5.20
4.1 9
2.67

50 1.395
4.32

3.4 3

12.700

6.3 5

2.92
s

5.3 3
.5 5

2.0 3

3.

INCHES
MIN.
.17
.0

.0

.1

6
6

MAX.
.2101

NOTES

022|
9

.01

1.3

fV .205

.12 5 .16 5
.09 5
5
.045 .0 5 5
.13 5 .1 70
.1

.5

1.270

EMITTER
BASE
COLLECTOR

.2
.1

00
50
1

2.670 .080

.05

1,3

3
3
2

.10 5

NOTES:

Operating

Tj

Storage

TsTG

Lead (1/16" + 1/32" from

TL

-55Cto+135C
-55Cto+135C
+230C

C
C
C

case for 10 sec.)

1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3.

(THREE LEADS) .b2 APPLIES BETWEEN L| ANDL 2

^b APPLIES BETWEEN L2 AND 12 .70 MM (.500'
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.
.

electrical characteristics:

(T A = 25C unless otherwise specified)

STATIC CHARACTERISTICS

SYMBOL

Breakdown Voltage
(Ic = 1mA, I B = 0)
Collector-Base Breakdown Voltage

v (BR)CEO

40

Volts

V(BR)CBO

60

Volts

V(BR)EBO

Volts

MIN.

MAX.

UNITS

Collector-Emitter

(Ic = 10/uA,

E = 0)

Emitter-Base Breakdown Voltage

(I E

= 10/iA, Ic = 0)

Collector Cutoff Current

(VCE = 30V,

VEB

(off)

= 3V)

ICEV

50

nA

(off)

= 3V)

Ibev

50

nA

Base Cutoff Current

(VCE = 30V,

VEB

Forward Current Transfer Ratio

(VCE = IV, Ic = 100M A)

(VCE = IV,

= 1mA)

2N3903
2N3904

hFE
hFE
h FE
h FE

20
40

2N3903
2N3904
2N3903
2N3904

th F E
th FE

50
100

(VCE = IV, I c = 50mA)

2N3903
2N3904

th FE
th FE

30
60

(VCE = IV, I c = 100mA)

2N3903
2N3904

th FE
397 th
FE

30

Ic

(VCE = IV, I c = 10mA)

35
70

15

150
300

'

2N3903
2N3904
STATIC CHARACTERISTICS

MIN.

SYMBOL

(Continued)

Collector-Emitter Saturation Voltage

tVCE (sat)
tVCE ( Sat)

1mA)
= 5mA)

B =

= 10mA,
(I c = 50mA,
(I c

Base-Emitter Saturation Voltage

= 10mA,
(I c = 50mA,

(I c

fVBE (S at)
tVBE (sat)

1mA)
= 5mA)

B =

IB

.65

MAX.

UNITS

.200

Volts

.300

Volts

.85

Volts

.95

DYNAMIC CHARACTERISTICS
Collector-Base Capacitance

(VCB = 5V, I E = 0,f =

pF

Ccb

MHz)

Emitter-Base Capacitance

PF

Ceb

(VEB = .5V, I c = 0,f = 1 MHz)

Current - Gain - Bandwidth Product
(VCE = 20V, I E = 10mA,f = 100 MHz)

2N3903
2N3904

fT

2N3903
2N3904

NF
NF

MHz
MHz

250
300

fT

Noise Figure
(I E

= 100fxA,

BW=

15.7

VCE

= 5V,

RG

kHz)

kHz

td

Turn-On Delay

(I c

= 10mA, I B1 =

tr

Time

Collector Current Rise

mA, VBE

(off)

2N3903
2N3904

Time

Collector Current Fall

ts

tf

Hybrid Parameters
(I E = 1mA, VCE = 10V,f =

< 300/Xsec,

35

ns

35

ns

175

ns

200

ns

50

ns

1mA)

= 10mA, I B1 =I B2 =
(R L = 275fi, Vcc = 3V)

*JEDEC

ts

Time

(I c

f Pulse width

dB
dB

= .5V)

(R L = 275fi)
Storage Delay

KHz)

Duty Cycle

2N3903
2N3904

hfe

50

hfe

100

200
400

2N3903
2N3904

hie

.5

10

2N3903
2N3904

hre

.1

X10"4

hre

.5

.8

X10"4

hoe

1.0

40

hie

< 2%.

kfl
k

jumhos

Registered Parameters.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

4-3.0VC

300n_J
l_
r.vr.1 F=9%

-0.5V
1.0

at-*

DUTY CYCLr = 2

4-IOKV

_^

\
<

io<t,<soo^t4

fi

\+
-

+ 3.0V
+ 10.9V

k
On*
C

1.

TURN-ON TIME TEST CIRCUIT

Totl

td

<

AND

eNeitn of ttt ji

* tmit tyi

2.

tr

398

TURN-OFF TIME TEST CIRCUIT

ts

AND

tf

2N3903
2N3904

2N39 33

100

Ta

-T A

"
T

rz.
r

25C,V ce *_5V
250, V C E

,V

.RS^C. VcE

'-

ta

IZD-1-, V CE = IV

lv

"

10

10

Ic -

COLLECTOR CURRENT

100

mA

FORWARD CURRENT TRANSFER RATIO

COLLECTOR CURRENT

3.

VS.

1000
::

2N3

:::
...

'
<

T/l=

25C, VcE

25*C, V CE

Tk

100

()4

^*

5V

s 1V

Ss
i

\;

^ = ;!

10

COLLECTOR CURRENT

c -

100

10

mA

FORWARD CURRENT TRANSFER RATIO

COLLECTOR CURRENT
en
1-

o
>

?
1

I.I

UJ

VS.

1.0

*-,

2N3903
2N3904

10

<

o
>
^

<
or
3
1-

.7

VbeU <rt)

' 55
i

v b e<
::!

vsr^ r6V,+25

.6

<I
IE

.b

"v5Tiort

UJ
1-

7
UJ

A ~"

Hrl2""

.3

Ul
(0

,2
.

n
10

10

Ic

COLLECTOR CURRENT

mA

BASE EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT
399

VS.

2N3903
2N3904
1.4

II
TA =25C
1

O
5

tf
en

1.0

2N3 903
2N3 904

l
-VOLT
EMITTE

CD

Kill

'

.6

2
1-

5
_jg
u

|] c

10mA

lmA

50mA

111

100

mA

5
.

-4

o
UJ

>

.1

"t
.c

01

01

6.

BASE CURRENT

rr

COLLECTOR EMITTER SATURATION

VOLTAGE VS. BASE CURRENT

c -

100

10

7.

II

10

.1

COLLECTOR CURRENT

mA

COLLECTOR EMITTER SATURATION

VOLTAGE VS. COLLECTOR CURRENT

100

10

COLLECTOR CURRENT

mA

COLLECTOR EMITTER SATURATION

VOLTAGE VS. COLLECTOR CURRENT
400

Silicon

Transistors

The General

Electric

2N3905 and 2N3906

transistors designed for general

PNP

values are negative:

absolute

PNP

are silicon

2N3905
2N3906

planar epitaxial

purpose switching and amplifier applications.

Observe proper polarity.

maximum

ratings:

(TA = 25C unless otherwise specified)

L,

VOLTAGES
Vceo
Vcbo
Vebo

Collector to Emitter

Collector to Base

Emitter to Base

40
40

Volts

~l

Volts

TO-92
A

Ic

mA

200

Pd

350

2.8

mW/C

.5
.4

Watts

1
J

TEMPERATURE
TsTG

Storage

Lead (1/16" 1/32" from

case for 10 sec.)

C
C

+135
-55 to +125

-55 to

5.2

4.4 5
3 18
2.41
I.I

4.1

12.700

L2

6.3 5

2.920

2.0 3

MAX.

.17

.2

90

NOTES

.0

6
2 2j
6 .0l_9j

.0

.1

2.67

501

3.4 3

5
8 2

MIN.

1.3

75 .205

.12 5

.09 5

.165
5

1.395 ,04_5j .0 5 5
.13 5 170
4.32

1.270

.5

00

1,3

- .05

.2 50
.1

2.670 .080

3
3
2

105

NOTES:
1.

TL

5.3 3

Tj

32
.4

Li

Operating

.4

T A < 25C
Factor T A > 25 C

MAX.

MIN.

fb

DISSIPATION

INCHES

MILLIMETERS

4,bz

$D

Total Power

1.

2.

CURRENT
Collector

EMITTER
BASE
3. COLLECTOR

1SEATING PLANE

Volts
SYMBOL

Derate

|JSUb>l*b~

--Q-

+230

THREE LEADS
CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3.CTHREE LEADS) <b2 APPLIES BETWEEN L; AND L 2
^b APPLIES BETWEEN L2 AND 12.70 MM .500'
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
.

FROM SEATING PLANE.

electrical Characteristics:

(TA = 25C unless otherwise specified)

STATIC CHARACTERISTICS
Collector-Emitter
(I c

= 1mA,

IB

V(BR)CEO

40

Volts

Breakdown Voltage
= 10m A, Ie = 0)
Emitter-Base Breakdown Voltage
(I E = 10/iA, Ic = 0)

V(BR)CBO

40

Volts

V(BR)EBO

Volts

Collector-Base
(I c

Collector Cutoff Current

(VCE = 30V,

VBE(OFF)

= 3V)

IcEV

50

nA

= 3V)

Ibev

50

nA

30
60

Base Cutoff Current

(VCE

=30V,VBE(OFF)

Forward Current Transfer Ratio

(VCE = IV, Ic = 100m A)

(VCE = IV, I c = 1mA)

(VCE = IV,

Ic

UNITS

MIN.

Breakdown Voltage
= 0)

MAX.

SYMBOL

= 10mA)

(VCE = IV, Ic = 50mA)

(VCE = IV, I c = 100mA)

2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906

h FE
hFE
hFE
hFE
thFE
thFE
thFE
thFE
thFE
th FE
401

40
80
50
100

30
60
15

30

150

300

2N3905
2N3906
STATIC CHARACTERISTICS

SYMBOL

(Continued)

MIN.

MAX.

uimii:

Collector-Emitter Saturation Voltage

= 10mA,
(I c = 50mA,
(I c

= 1mA)
I B = 5mA)
IB

tVC E(sat)
tVCE (sat)

.250

Volts

.400

Volts

VBE( sa

.65

.85

Volts

.95

Volts

Base-Emitter Saturation Voltage

(I c

(I c

= 10mA, I B = 1mA)
= 50mA, I B = 5mA)

t)

tvBE(sat)

DYNAMIC CHARACTERISTICS
(VCB = 5V, I E = 0,f =
Emitter-Base Capacitance
(VEB = 5V, I c = 0,f =

MHz)

Ccb

MHz)

Ceb

Current - Gain - Bandwidth Product

(VCE = 20V, I E = 10mA, f = 100 MHz)

2N3905
2N3906

fT

2N3905
2N3906

NF
NF

fT

Noise Figure
(I E

= 100M A,

BW=

15.7

Vce

= 5V,

RG

= lKft)

KHz

Turn-On Delay Time

Collector Current Rise

= 10mA, I B1 =
(R L = 275ft)
(I c

Storage Delay

4.5

PF

10

pF

200
250

10

MHz
MHz

dB
dB

35

ns

35

ns

200
225

ns

60

ns

75

ns

hfe

50
100

200
400

hie

.5

hie

12

hre
hre

.1

10

td

Time
1

mA,

VBE

(off)

= .5V)

Time

Time
= 10mA, I B1 = I B2 = 1 mA)
nA)
(R L = 275ft, VCC = 3V)

2N3905
2N3906

t.

2N3905
2N3906

tf

ts

ns

Collector Current Fall

(I c

Hybrid Parameters
(I E = 1mA, VCE = 10V,

width

t Pulse

*JEDEC

2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906

KHz)

tf

cle < 2%.

< 300/lsec, Duty Cycle

hfe

hoe

hoe

Kft
Kft
XI 0-4
XI 0-4
jumhos

40
60

jumhos

Registered Parameters,

SWITCHING TIME EQUIVALENT TEST CIRCUITS

-

-3.0V

3.0V ,

<

+ 9.1V
275

-|

U < 1.0 m

+asv

10 k

>vvv

Ci<4.0pF

-10.V

>-
"*

HU_300U
DUTY CYCLE=2%
1

C(

1.

10<*,< 500/H -*j

DOTY CYCLE* 2%

Total thwit

TURN-ON TIME TEST CIRCUIT

td

AND

it f it

e > e

jif

402

h~

eeMMCtor*.

2.

tr

TURN-OFF TIME TEST CIRCUIT

ts

AND

tf

2N3905

2N3906

"z
--

TA

IZS'C, VCE =-IV

_TA *

- ^

25C,^e^5V
""

"

' T
'A

2N3905

- _**(-.

j-rr1
= - iV

V^t

-10

-I
I

c -

COLLECTOR CURRENT

-100

mA

FORWARD CURRENT TRANSFER RATIO

COLLECTOR CURRENT

3.

1000

VS.

""

TA
-T

100

-.-,--

T.

- \dS-<~,

2N3906

v CE --iv

25C,Vce^lLL

MS*C. Vr-c

---,

-w
E

-10
-

-I
I

c -

COLLECTOR CURRENT

1 i

mA

FORWARD CURRENT TRANSFER RATIO

COLLECTOR CURRENT

4.

VS.

TA

25C

2N 3905
2N 3906

-10mA l-50m A

-ImA

(E UJ

_.r_

t_

AN

s,

-.001

BASE CURRENT

mA

COLLECTOR-EMITTER SATURATION
VOLTAGE VS. BASE CURRENT
403

1-IC OmA

2N3905
2N3906

-.01

-10

-I

COLLECTOR CURRENT

Ic

mA

COLLECTOR-EMITTER SATURATION

6.

VOLTAGE

VS.

COLLECTOR CURRENT
-- 2N3906-

c =I B

XI0

'i-25'C^

-.01

7.

-100

-10

-I
I

COLLECTOR CURRENT

mA

COLLECTOR-EMITTER SATURATION
VS. COLLECTOR CURRENT

VOLTAGE
<o -1.2

o
>
UJ

Ic = I B

-10

<

-.9

-.8

1-

-7

o
>

V B E I*

VbeI**
:::

oc

-.6

vbT^

4
in

S
UJ
UJ
tn

<

-.4

+25*c' ^CE

-.6
oc.
iii

t-

2N390S
2N3906

10

"""

"'vbeI <P

'

-W

iS<>c__

-.3

-.2

o
Ic

8.

-io
-

-I

"-.I

COLLECTOR CURRENT

-100

mA

BASE EMITTER SATURATION VOLTAGE

VS.

COLLECTOR CURRENT
404

Silicon

Transistors

The General

Electric

2N4123 and 2N4124

are

NPN

2N4123
2N4124

Silicon

Planar Epitaxial passivated transistors designed for general purpose amplifier applications.

*
t

>

iT

i_T_
t

absolute

$b

maximum

ratings:

(T A = 25C unless otherwise specified)

2N4124

2N4123

t-Q-

SEATING PLANE

Voltages

2.

Collector to Emitter

Vceo
Vcbo
Vebo

Collector to Base

Emitter to Base

30
40

TO- 92

25

Volts

SYMBOL

30

Volts

Volts

fa
*D
Ic

200

mA

200

Dissipation

T A < 25 C
Derate Factor T A > 25 C
Total Power Tc < 25 C
Derate Factor T c >25C
Total Power

PT
PT
PT
PT

350
2.8

mW

350

.4

.55
.4

4.4 5

80|

5.20

Li

L2

4.1

.0

0;.l

90

2.41 0! 2.67
I.I

.0

8 2

3.1

6 .022!
6

'"'

.0

.l 2 5
;.09 5

.1

I.270

1,3

.1

65

05>

.170'

.500

.0501

6.350!

045 055

50l 1.395

75. 205!

3.43014.320.1 35
I2.700i

2.920
s

m\V/C

.4

Watt

e
e1

mW/C

2.8

3.

millimeters; INCHES
U
MIN.
MAX.
MIN. IMAX.I
4.3 2
5.3 501.17
.2I 0'
j

A
fb

Current
Collector

EMITTER
BASE
COLLECTOR

I.

.250
.

.1

5i

2.030i 2.670: .080

j.l

1,3

5i

NOTES:

three leads
2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

Temperature

i.

Operating

Tj

Storage

T STG

Lead (1/16" 1/32" from

case for 10 sec.)

-55Cto+150C
-55Cto+150C
+260C

*electrical characteristics:

Breakdown Voltage
mA, VBE = 0)

3.

(THREE LEADS) *b2 APPLIES BETWEEN

L,

AND L

2
*b APPLIES BETWEEN L2 AND 12.70 MM 500')
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L, AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.
(

<t A = 25 C unless otherwise specified)

Static Characteristics

Breakdown Voltage
mA, I B = 0)

THIS SIDE.

C
C
C

SYMBOL

MIN.

MAX.

UNITS

2N4123

V(BR)CEO

30

Volts

2N4124

V(BR)CEO

25

Volts

2N4123

V(BR)CBO

40

Volts

2N4124

V(BR)CBO

30

Volts

V(BR)EBO

Volts

IcBO

50

T?A

Iebo

50

qA

hFE
hFE

50
120

150
360

25

Collector-Emitter
(I c

Collector-Emitter
(I c

Breakdown Voltage
(I c = 10 mA, I e = 0)
Collector-Base Breakdown Voltage
(Ic = 10 mA, I e = 0)
Collector-Base

Emitter-Base Breakdown Voltage

(I

E = 10 M,

Ic = 0)

Collector Cutoff Current

(VCB = 20V, I E =

0)

Emitter-Base Reverse Current

(VEB = 3V, I c = 0)
Forward Current Transfer Ratio
(VCE = 1V, I c = 2 mA)
(VCE = 1V, I c = 2 mA)
(VCE = IV, I c = 50 mA)
(VCE = IV, I c =50mA)

2N4123
2N4124
2N4123
2N4124

405

th FE
thFE

60

2N4123
2N4124

MAX.

UNITS

1"V CE (sat)

.3

Volts

1"V BE sat )
(

.95

Volts

SYMBOL

Static Characteristics (continued)

MIN.

Collector-Emitter Saturation Voltage

(I c

= 50 mA,

B = 5

mA)

Base-Emitter Saturation Voltage

(I c

= 50

Dynamic

mA,

B = 5

mA)

Characteristics

Collector-Base Capacitance

(VCB = 5V, I E =

0, f

= 100 KHz)

Cob

pF

Cib

pF

MHz
MHz

Emitter-Base Capacitance

(VEB = .5V, I E = 0, f = 100 KHz)

Gain Bandwidth Product
(V CE = 20V, I c = 10 mA, f = 100 MHz)
(V CE = 20V, I c = 10 mA, f = 100 MHz)

2N4123
2N4124

fT

Forward Current Transfer Ratio

(VCE = 20V, I c = 10 mA, f = 100 MHz)
(VCE = 20V, I c = 10 mA, f = 100 MHz)

2N4123

hfe

2.5

- 2N4124

hfe

Forward Current Transfer Ratio

(VCE = IV, I c = 2 mA, f = 1 KHz)
(VCE = IV, I c = 2 mA, f = 1 KHz)

- 2N4123
- 2N4124

fT

250
300

hfe

50

hfe

120

200
480

Noise Figure (Broad Band)

(I c

= IOO/jA,

Vce

= 5V,

R"s

Bandwidth = lOHzto 15.7 KHz)

jPulse Conditions:
""Indicates

JEDEC

Pulse Width

< 300ms,

- 2N4123
- 2N4124

Duty Cycle

NF
NF

< 2%.

Registered Data.

406

dB

dB

2N4123
2N4124
1000

too

Ic -

100

10

.1

COLLECTOR CURRENT

mA

FORWARD CURRENT TRANSFER RATIO

COLLECTOR CURRENT

1.

VS.

lOOOr

<

I00

<E

3
L>
a
IE
<
*

too

,0

COLLECTOR CURRENT

mA

FORWARD CURRENT TRANSFER RATIO

COLLECTOR CURRENT

2.

VS.

IO0
Ic -

3.

COLLECTOR CURRENT

mA

BASE EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT
407

VS.

2N4123
2N4124
I.4
1

TA

<*

2SC

2N4I23
2N4I24

II

.r.

*-5
lie

5o
<

1mA

10

mA

50 mA

100 m A

Koh'*

I
.3

"

ST'~

!o 01

.01

4.

.1

2<

COLLECTOR EMITTER SATURATION

VOLTAGE VS. BASE CURRENT

10

COLLECTOR CURRENT

lc -

5.

10

100

mA

COLLECTOR EMITTER SATURATION

VOLTAGE VS. COLLECTOR CURRENT

10

6.

COLLECTOR CURRENT

100

mA

COLLECTOR EMITTER SATURATION

VOLTAGE VS. COLLECTOR CURRENT
408

Silicon

Transistors

The General

Electric

2N4125 and 2N4126

are

PNP

2N4125
2N4126

Silicon

Planar Epitaxial passivated transistors designed for general purpose amplifier applications. PNP Polarities are negative, observe

proper

bias.
->

maximum

absolute

ratings:

(t a

2N4125

2N4126

30

25

QA

Voltages
Collector to Emitter
Collector to Base

Emitter to Base

Vceo
VCBO
VEBO

30
4

25

Volts

TO-92

Volts

MILLIMETERS
MAX.
MIN.

SYMBOL

Current
Ic

*b2

mA

200

200

t-D

Dissipation

T A < 25C
Derate Factor TA > 25C
Total Power T c < 25C
Derate Factor Tc >25C
Total Power

PT

350

350

PT
PT
PT

2.8

2.8

mW

Watt

mW/

Tj

Storage

TsTG

Lead (1/16" + 1/32" from

TL

+260''C

Collector-Emitter

mA,

(I c

(I c

= 0)

L|

L2

50
3.4 30
I.I

12.700

6.3 5

\J.

^4.

8 2

2
1

.0

32
-

.0

1.3

.1

.12 5 .16 5

2,67
.09 5
1.39 5 .0 4 5
4.

22

9
75 .205
1

NOTES

.1

.1

.0

55

3 5 .170

00

1.270

.2 50

.05

.5

2.92

.1

2.0 3

2.670

.0

80

1,3

3
3
2

.10 5

THREE LEADS
CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE
THIS SIDE.

3.

(THREE LEADS) ^b2 APPLIES BETWEEN L, ANDL 2

$b APPLIES BETWEEN L2 AND 12.70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.
.

SYMBOL

MIN.

MAX.

UNITS

2N4125

V( B R)CEO

30

Volts

2N4126

V( B R)CEO

25

Volts

2N4125

V(BR)CBO

30

Volts

2N4126

V(BR)CBO

25

Volts

V(BR)EBO

Volts

ICBO

50

r)A

Iebo

50

TjA

Breakdown Voltage

VBE

mA,

= 0)

Breakdown Voltage

= 10|xA,I E = 0)

Collector-Base

80

2.4I

MAX.
.2

Breakdown Voltage

IB

Collector-Emitter

Collector-Base

4.4 5

MIN.
.17

J 5_5_0 H1.0
.4

COLLECTOR

INCHES

(t a = 25c unless otherwise specified)

Static Characteristics

3.

1.

C
C
c

-55Cto +150C
-55C to +150C

'electrical characteristics:

Oc =

e
e1

case for 10 sec.)

.4

EMITTER
BASE

3.

I.

5.3 3

.4

2.

NOTES:

Operating

4.3 2

mW/

Temperature

(I c

rid_J
SEATING PLANE

Volts

A
*b

Collector

e -T

= 25c unless otherwise specified)

Breakdown Voltage

= 10 M,

IE

=0)

Emitter-Base Breakdown Voltage

(I E

10M,

Ic = 0)

Collector Cutoff Current

(VCB = 20V, I E = 0)
Emitter-Base Reverse Current

(VEB = 3V, I c = 0)
Forward Current Transfer Ratio
(VCE = IV, I c = 2 mA)
(VCE = 1V, I c = 2 mA)

(VCE = IV, I c = 50 mA)

(VCE = lV,I c = 50mA)

2N4125
2N4126
2N4125
2N4126

h FE

50

150

h FE

120

360

25

th FE
th F E

409

60

2N4125
2IM4126

Static Characteristics (continued)

SYMBOL

MIN.

AAX.

UNITS

Collector-Emitter Saturation Voltage

(I c

=50mA,

=5mA)

tVC E(sat)

.4

Volts

tV BE (sat)

.95

Volts

Ccb

4.5

pF

Cib

10

pF

Base-Emitter Saturation Voltage

(I c

= 50 mA,

Dynamic

IB

=5mA)

Characteristics

Collector-Base Capacitance

(VCB = 5V, I E =0,

= 100 kHz)

Emitter-Base Capacitance

(VEB =.5V, I c =

0, f

= 100 kHz)

Gain Bandwidth Product

(VCE = 20V, I c = 10mA, f = 100 MHz)
(VCE = 20V, I c = 10 mA, f = 100 MHz)

Forward Current Transfer Ratio

(VCE = 20V, I c = 10 mA, f = 100 MHz)
(VCE = 20V, I c = 10 mA, f = 100 MHz)
Forward Current Transfer Ratio
(VCE = 1 V, I c = 2 mA, f = 1 KHz)
(VCE = IV, I c = 2mA, f = 1 KHz)

2N4125
2N4126

fT
fT

MHz
MHz

200
250

2N4125
2N4126

hfe

hfe

2.5

2N4125
2N4126

hfe

50

hfe

120

2N4125
2N4126

NF
NF

200
480

Noise Figure (Broad Band)

= 100 mA,
Bandwidth =

(I c

t Pulse Conditions:

indicates

JEDEC

Vce
1

= 5V, Rs =

Hz

to

Pulse Width

5.7

Kft

KHz)

< 300 ms,

Duty Cycle

< 2%.

Registered Data.

410

dB
dB

2N4126
1000

z
<

K
3
a

1.

-100

-io

-i
I

COLLECTOR CURRENT

mA

FORWARD CURRENT TRANSFER RATIO

COLLECTOR CURRENT

-10
-

-I
I

COLLECTOR CURRENT

VS.

-100

mA

FORWARD CURRENT TRANSFER RATIO

COLLECTOR CURRENT

2.

VS.

-1.4

-1.3

o
S

1
|

T*25'C

2N4I25
2N4I26

- |2

5 -i.o
-.9
t- o " >
3 > B
" -7

Ic

00 mA

-10mA' -5 OmA

-ImA

'

23
o
o

^
-4

\
-.i

"^"

_LLL1

-.001

-i

-.01

lg -

3.

BASE CURRENT

-i
-

mA

COLLECTOR-EMITTER SATURATION
VOLTAGE VS. BASE CURRENT
411

K>

-20

2N4125
2N4126

-i

-10

100

COLLECTOR CURRENT - mA
4.

COLLECTOR-EMITTER SATURATION
VS. COLLECTOR CURRENT

VOLTAGE

-10

-I

Ic -

5.

COLLECTOR CURRENT

-100

mA

COLLECTOR-EMITTER SATURATION
VS. COLLECTOR CURRENT

VOLTAGE

-10
-

-I

Ic -

6.

COLLECTOR CURRENT

-ICO

mA

BASE EMITTER SATURATION VOLTAGE

VS.

COLLECTOR CURRENT
412

Silicon

Transistor

NPN

The General Electric 2N4256 is a planar epitaxial, passivated

transistor characterized for low level medium speed switching applications in industrial circuits.
This transistor features a high current transfer ratio over a wide range of collector
current, a low collector saturation voltage, and a guaranteed stored base charge.

absol ute maxi mum

rati ngs:

(25C) (unless otherwise specified)

Voltages

Low

30 Volts

Collector to Emitter

VCBS

Emitter to Base
Collector to Base

Veuo

5 Volts

V cn0

30 Volts

Ic

100mA

Cost

High Beta

LOW V CE

S AT)

Rugged Encapsulation

Current

Collector (Steady State)*

Dissipation

Total
Total

Power (Free air at 25 C ) f PT

Power (Free air at 55C) f PT

36

250

mW
mW

DIMENSIONS WITHIN
JEDEC OUTLINE TO-98

Temperature

T STG

Storage
Operating

T. T

Lead Soldering, 1/16" 1/32"

from case for 10 sec. max.

-55

to 125 C

125 C

NOTE 1: Lead diameter is controlled in the

zone between .070 and .250 from the seating plane.

Between .250 and end

max. of .021

is

of lead a

held.

TL

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

260 C

,500

SEATING

MIN

PLANE

i_

*Determined from power limitations due to saturation

voltage at this current,
f Derate 2.67

mW/C

increase in ambient temperature

above 25C.

electrical characteristics: (2 5C) (unless otherwise specified)

STATIC CHARACTERISTICS
Breakdown Voltage
IOOjuA)

Min.

Collector to Base

Typ.

Max.

Units

Vri.O

30

V CE8

30

Emitter to Base Breakdown Voltage

(I E
100/xA)

V K o

Forward Current Transfer Ratio

(I c =
rE = 4.5 V)

h F1

(I c

Collector to Emitter

(V EB =

Breakdown Voltage

0, Ic

= 1mA)

2mA,V

100

220
120

Forward Current Transfer Ratio

= 10mA, V CE = 0.2V)

b-KE

60

Forward Current Transfer Ratio

(I c = 50mA,V rE = 0.2V)

hE

20

(I c

413

500

2N4256

STATIC CHARACTERISTICS
Typ.

Max.

Units

V('E(SAT,

0.16

0.20

= 2.5mA)

VceisaT)

0.14

0.20

Base-Emitter Saturation Voltage

(I (, = 50mA, I,j = 2.5mA)

Vijk(RAT)

0.82

0.92

0.1

500

nA

15

fiA

0.1

500

nA

0.1

500

nA

2.7

4.0

PF

Min.
Collector-Emitter Saturation Voltage

(I r

10mA,

0.1 to

I,,

Ir/50)

Collector-Emitter Saturation Voltage

(I r

= 50mA,

IB

Collector Cutoff Current

(V C B = 30V)

I('P.O

Collector Cutoff Current

= 18V, T A = 100C)

(V,.

Iciso

Collector Cutoff Current

-0)

(V ck = 30V,Vb B

I('KS

Emitter Cutoff Current

(V EB = 5V)

Ik HO

DYNAMIC CHARACTERISTICS
Collector Capacitance

(V

= 10V,

IE

0, f

MHz)

()b

Transition Capacitance

(V EB = 0.5V,
Stored Base Charge

(I

0,

MHz)

pF

10

Cib

(Circuit 1)

= 0.32mA,

Ic

= 10mA)

QSH

250

fT

200

4.0

toff

40

600

pC

Gain Bandwidth product

(V CE = IV,

Ic

Turn-on Time (Figure

1)

(I c
Turn-off

= 10mA)

Time (Figure

(I c

= 10mA)

MHz
nS

])

= 10mA)

100

nS

180

nS

Turn-on Time (Figure 2)

= 10mA, I B1 = 0.32mA,
= 54fi A)

(I

I B2

Turn-off

Time (Figure

(I c

2)

= 10mA, Ij = 0.32mA,
= 54 M A)

I 2

t,ff

)+6V
>600
lOOpF

Hh

+6
'

'

16

lO/jS
10

KHz

S50A

Figure

Figure 2

Qsn measured in circuit of Figure 1, the capacitor is adjusted to give a turn

lOOnS, and Q SB is calculated from the equation Qsn = 6C.
414

off

time of

Silicon

Transistors

The General

Electric

2N4400 and 2N4401

NPN

are silicon

2N4400
2N4401

planar epitaxial

passivated transistors designed for general purpose switching and amplifier

applications.

absolute

maximum

AD

ratings:

(T A = 25C unless otherwise specified)

VOLTAGES
Collector to Emitter

Vceo
Vcbo
Vebo

Collector to Base

Emitter to Base

40
60

Volts

Volts

Volts

SYMBOL

CURRENT
Collector

mA

600

Ic

DISSIPATION

T A < 25C
Total Power Tr < 25C
Derate Factor TA > 25C
Derate Factor Tc

m Watts
m Watts

350
1000

PT
Pt

mW/C
mW/C

2.8

> 25C

8.0

Operating
Storage
Lead (1/16" + 1/32"

+150
to +150

Tj

-55 to

TsTG

-55

1.

MIN.

4.4 5

80

3.1

2.41

I.I

5.3 3
.5 5
.4

.17
.0
.0

5.2
4.1 9
2.67

LZ

&350
2.920

2.0 3

2 2

.01

.500

.2

2.67

.0

.1

50
1

.05
5

80

Collector-Emitter
(I c

Breakdown Voltage
= 100mA, I e = 0)
Emitter-Base Breakdown Voltage
(Ie = 100J"A, Ic = 0)

VEB

40

Volts

60

Volts

Volts

40

V(BR)CBO

60

V(BR)EBO

= .4V)

IcEV

VEB (off)

= .4V)

Ibev

h FE
hFE
th FE
th FE
th FE

MAX.

MIN.

= 150mA, I B = 15mA)
(I c = 50QmA, I B = 50mA)

100

100

nA

100

100

nA

20
40
50
20

Collector-Emitter Saturation Voltage

(l c

UNITS

V(BR)CEO

(off)

Forward Current Transfer Ratio

(VCE = IV, I c = .1mA)
(VCE = IV, l c = 1.0mA)
(VCE = IV, l c = 10mA)
(VCE = IV, I c = 150mA)
(VCE = 2V, I c = 500mA)

MM 1.500")

MAX.

MIN.

Base Cutoff Current

(VCE = 35V,

12.70

2N4401

SYMBOL

Collector Cutoff Current

(VCE = 35V,

(T A = 25C unless otherwise specified)

Collector-Base
(Ic

3
3
2

THREE LEADS
CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

Breakdown Voltage

= 1mA, I = 0)

1,3

2N4400

STATIC CHARACTERISTICS

.10 5

CONTROLLED IN L, AND BEYOND

FROM SEATING PLANE.

electrical Characteristics:

1.3

.1

1.270

NOTES

.09 5
5
.04 5 .0 5 5
.13 5 .170

3.430 4.32

.0

9
.17 5 .205
.12 5 .16 5

8 2

50 1.395

12.700

MAX.
.210

THIS SIDE.
3 (THREE LEADS) *b2 APPLIES BETWEEN L AND L 2
$b APPLIES BETWEEN L2 AND 12.70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UN-

+230

EMITTER
2. BASE
3. COLLECTOR
INCHES
I.

NOTES:
2

TL

7
7

L|

From

Case for 10 sec.)

4.3 2

E-

MILLIMETERS
MAX.

.4

~|.

L2 -H

MIN.
.4

C
C

L-^-*!^^

SEATING PLANE

f>b

TEMPERATURE

L,

*h2

+D

Total Power

Z3LZ

tVCE (sat)
tVCE sa t)
(

415

150

20
40
80
100
30

300

.4

.4

Volts

.75

.75

Volts

2N4400
2N4401
2N4401

2IM4400

STATIC CHARACTERISTICS

SYMBOL

(Continued)

MIN.

MAX.

MIN.

MAX.

UNITS

Base-Emitter Saturation Voltage

(I c
(I c

= 150mA, I B = 15mA)
= 500mA, I B = 50mA)

fVBE(sat)

.75

.95

.75

.95

Volts

tVBE(sat)

~~

1.2

1.2

Volts

DYNAMIC CHARACTERISTICS
Collector-Base Capacitance

(VCB = 5V, I E = 0,f =

Emitter-Base Capacitance

(VEB = .5V, I c = 0,f =

MHz)

C CB

6.5

6.5

PF

MHz)

C EB

30

30

PF

200

250

20

250

40

500

Gain Bandwidth Product

(VCE = 10V, I c = 20mA, f = 100 MHz)
Forward Current Transfer Ratio
(VCE = 10V, I c = 1mA, f = 1 kHz)

Output Admittance
(VCE = 10V, Ic = 1mA,
Input Impedance
(VCE = 10V, I c = 1mA,

ft

hfe

MHz

kHz)

h oe

30

30

/z

kHz)

hie

.5

.75

15

kfi

h re

.1

.1

mhos

Voltage Feedback Ratio

(VCE = 10V, 1mA,

kHz)

xip-4

SWITCHING CHARACTERISTICS
Delay Time

Time
(I c = 150mA, I B i =15mA)
(VCE = 30, VEB (off) = 2V)
Storage Time

Rise

*JEDEC

Duty Cycle

15

ns

20

ns

225

ns

30

ns

30

tf

< 300 //sec,

20

225

ts

Time
15 mA)
0bi = B2
(VCE 30V, I c = 150 mA)

f Pulse Conditions: Pulse width

tr

Fall

15

td

< 2%.

Registered Parameters.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+30V

+ 30V

+ I6V-^|
I

UI

1.0

TO 100/iS

DUTY CYCLE

200 a

t!6V

2%

-I.0

TO

J20OIX
\00fj.S

DUTY CYCLE

2%

IKfl

IKfl

-^wv

-I4V
|C s

<IOpF

< 20 nS

IN9I6

50ft

6
Scop* RiM Tim* < 4if
C, it Total Shunt CopocltOKC* of Tot Jis, Connoctort ond Otcilloscop*.
1.

TURN-ON TIME

2.

416

-4V

TURN-OFF TIME

|C s <IOpF

2N4400
2N4401
3.0

1.0

II

v CE

II

- ^-

IV
,,

"

^-

"

Tj

"-

.-

l.0

rK*~'

--

-"

^1

'

<
K

0.7

...

,.<

0.6

Ic

100

^00 mA

mA

-J

>

0.4

"

..'

- .

--

0.2

^.-'
*

0.2
0.1

0.5

0.2

2.0

1.0
Ic

3.

5.0

50

20

10

COLLECTOR CURRENT

100

200

500

0.01

* ...
0.05

0.02

0.2

0.1

0.5

1.0

2.0

Ia-BASE CURRENT

mA

DC CURRENT GAIN

4.

5.0

10

20

50

mA

COLLECTOR SATURATION REGION

+ 0.5

i.o

=
J

2 5C

0.8

llOmA

ImA

'"1

0.5

0.3

::;^

^J>5(

- :"- .'

>

* *

"

."

25C

Tj

25-t;

'

ti
_l

**.

I25C

V IE

0.6

sat) <>

V1 B

BE [on) S>vCE

D"

9V c -UK 'ceUo*)

OV
-i.o

0.4

0.2

-2.0

V CEU0t)V 'C'B
1

0.1

0.2

0.5

2.0

1.0
Ic

5.

~B vbF JR V BE

mill
5.0

10

50

20

COLLECTOR CURRENT

100

200

500

0.1

0.2

0.5

mA

1.0
I

"ON" VOLTAGES

6.

c -

2.0

5.0

10

20

COLLECTOR CURRENT

50
-

100

200

500

mA

TEMPERATURE COEFFICIENTS

417

Silicon

2N4402
2N4403

Transistors

The General

Electric

2N4402 and 2N4403

are silicon

PNP

planar epitaxial

passivated transistors designed for general purpose switching and amplifier

applications.

Current and voltage values for

absolute

maximum

PNP

are negative.

Observe proper bias polarity.

ratings: (ta = 25C

unless otherwise sped:

VOLTAGES
Collector to Emitter
Collector to Base

VcEO
VCBO
Vebo

Emitter to Base

40
40

Volts

Volts

Volts

TO-92

CURRENT

SYMBOL

Collector

mA

600

Ic

DISSIPATION

T A < 25C
T c < 25C
Factor TA > 25C
Factor TG > 25C

Total Power

PT

Total Power

Pt

Derate
Derate

m Watts
m Watts

350
1000
2.8

.4

55

.4

,4

4>D

4.4 5
3.1

2.41

L
Lt

L2

TEMPERATURE

4.1

Storage

TsTG.

Lead (1/16" 1/32" from

case for 10 sec.)

-55Cto+150C
-55Cto+150C

C
c

.2

.1

90

.1

NOTES

^022

oTs

75

.20 5

2 51.1

.09 5
.0 4 5

1.3
1

65

05,
1.395
.0 5 5
4.320 JJ5_5 .170

3.4 3

12.700

.5

.2 50

2.67

.0

6.3 5

.1

2.0 3

.1

00^

1.270

2.920

Tj

MAX.

.0

2.67

50

I.I

MIN.
.17

8 2

5.2

80

INCHES

5.3 3

4.3 2

fb

3.

MILLIMETERS
MAX.
MIN.

4>b2

mW/C
mW/C

8.0

Operating

EMITTER
BASE
COLLECTOR

2.

.0

1,3

3
3
2

80 .105

NOTES:
1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

TL

+230C

THIS SIDE.

3.

(THREE LEADS) <j,bz APPLIES BETWEEN L| AND L 2

<f,b APPLIES BETWEEN L 2 AND 12.70 MM (.500'
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 1.500")
FROM SEATING PLANE.
.

electrical Characteristics: (T A = 25C

unless otherwise specified)

2IM4402

STATIC CHARACTERISTICS
Breakdown Voltage
(I c = 1mA, I B = 0)
Collector-Base Breakdown Voltage
(I c = lOO^A, I e = 0)

SYMBOL

MIN.

V( B r)ceo

40

V(BR)CBO

40

Y[BR)EBO

MAX.

2N4403

MAX.

UNITS

40

Volts

40

Volts

Volts

MIN.

Collector-Emitter

Emitter-Base Breakdown Voltage

= 100M A, Ic = 0)
Collector Cutoff Current
(VCE = 35V, VEB (off) = .4V)
(I E

IcEV

100

100

nA

100

100

nA

Base Cutoff Current

(VCE = 35V,

VEB

(off)

= .4V)

Forward Current Transfer Ratio

(VCE = IV, I c = .1mA)
(VCE = IV, I c =
1mA)
(VCE = IV, I c = 10mA)
(VCE = 2V, I c = 150mA)
(VCE = 2V, I c = 500mA)

Ibev

hFE
hFE
thFE
thFE
fh F E

30
50
50
20

418

30
60
150

100
100
20

300

2N4402

2N4403
2N4403

2IM4402

STATIC CHARACTERISTICS

(Continued)

SYMBOL

MIN.

MAX.

MAX.

MIN.

UNIT

Collector-Emitter Saturation Voltage

= 150mA,
= 500mA,

(I c

0c

B =

IB

15mA)

.4

tVcE(sat)

= 50mA)

tVcE(sat)

.75

.75

.95

.4

Volts

.75

Volts

.95

Volts

1.3

Volts

Base-Emitter Saturation Voltage

= 150mA,
=
500mA,
C

(I c

I
I

+VBE(sat)

B = 15mA)
B = 50mA)

.75

1.3

tVoWcot'l

DYNAMIC CHARACTERISTICS
Collector Base Capacitance

(VCB = 10V, I E = 0,f=lMHz)

C cb

8.5

8.5

pF

C eb

30

30

pF

MHz

Emitter-Base Capacitance

c = 0,f =
Gain Bandwidth Product

(VEB =

.5V,

MHz)

(VCE = 10V, I c = 20mA, f = 100 MHz)

Forward Current Transfer Ratio
(VCE = 10V, I c = 1mA, f = 1 kHz)

fT

150

200

hfe

30

250

60

500

750

7.5k

1.5k

15k

Ohms

Input Impedance

= 1mA,

(I c

VCE

kHz)

hie

= 10V, f =

kHz)

h re

.1

.1

xi o-4

kHz)

hoe

100

100

;umhos

= 10V,

Voltage Feedback Ratio

(Ic =

1mA,

VCE

Output Admittance
0c = 1mA, VCE = 10V,

SWITCHING CHARACTERISTICS
Delay Time
{d

Time

Rise

= 150mA, I B1 = 15

(I c

15

15

20

20

225

225

ns

30

30

ns

ns

mA)

(VCE = 30, VEB (off) = 2V)

Storage Time
Fall Time
0Bi =Ib2 = 15 mA)
(VCE = 30V, I c = 1 50 mA)

<=

300 Msec, Duty Cycle

fPulse width
*JEDEC Registered Parameters.

tr

ts

tf

< 2%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

-30 V

e
2V

16V

(V, N =

<20nS

-<2nS

-30V)

-J

k- 1.0 TO

L- 1.0

-J

IOO /J.S

DUTY CYCLE

TO IOO/iS

DUTY CYCLE

2%

2%
o

Scop* Rlt*Tim <4nS.

C ( - Total Shunt CapaeitMc*
1.

TURN-ON TIME

+4V
of

Tut

Jifl

and Oaeillotcoiw.
2.

419

TURN-OFF TIME

2IM4402

2N4403
1.0

3.0

2.0

VCE

nil
1V

* -

^%

25C

'"

|
J

^>

125

* *

*"'
-

-- T
'

^
'-^
<-

,.'

-w

0.5

'

^
'

*"^

0.7

S
o

-"" r

L'

ImA

10

mA

100

\\ 500 mA

mA

T*s

"

0.4

0.2
0.3

0.2
0.1

0.2

0.5

2.0

1.0

Ic

"

5.0

20

10

50

COLLECTOR CURRENT

100

200

500

0.005

0.02

0.05

0.2

0.1
IB

DC CURRENT GAIN

3.

0.01

mA

0.5

2.0

1.0

BASE CURRENT

5.0

10

20

50

200

500

mA

COLLECTOR SATURATION REGION

4.

i.o

Tj

25C

0.8

o
>

v BE(tot)

Vprl .. & i)

0.6

ic'iu =

VCE

8 VC FOR VcE(tOl)

^'

IC

nv

-1.0

0.4

0.2

g VB FOR "BE

-2.0

'CE(aDU 'c"B
i

0.1

0.2

0.5

1.0

Ic "

5.

2.0

illlll
5.0

10

=,'0"
I

-2.5

20

COLLECTOR CURRENT

50
-

100

200

500

"0.1

0.2

mA

SATURATION VOLTAGE AND Vbe

0.5

Ic

<on)

6.

420

2.0

1.0

"

5.0

10

20

COLLECTOR CURRENT

50
-

100

mA

TEMPERATURE COEFFICIENTS

Silicon

2N4409
2N4410

Transistors

The General

applications and for

absolute

2N4409 and 2N4410

Electric

Epitaxial Passivated

Transistors

Neon Display Tube

maximum

ratings:^

are Silicon

NPN

Planar

designed for high voltage amplifier

L^k

Drivers.

TA = 25C

p-o-

-A

unless otherwise specified)

L2

VCEO

Collector to Emitter
Collector to Base

Vcbo
Vebo

Emitter to Base

2N4409

2N4410

50

80

-I
EMITTER
2. BASE
3. COLLECTOR

80
6

120

SYMBOL

Volts

Volts

4b

Current
Collector

250

Ic

mA

250

<

TA
Power T c

25 C

PT
PT
PT
PT

625

.4

.4

4.4 5

Storage

Ts tg

Operating

Tj

Lead (1/16" 1/32" from

TL

+150
-55 to +150
+260

Total

3.

2.4I

Derating Factor
Derating Factor

< 25C
TA
Tc

> 25C
> 25C

1.5

1.5

12

Watts

Ll

L2

mW/C
mW/C

12

5.3 3
.5 5

46

.0

.0

.0

.0

2 2

1.3

'

7 5 .20 5
.1 2 51.1 6 5
.09 5
5
.1

4.
9
2.67
1

.1

395 .045I.055
50
35l.l70i
30 4.32
1

I.I

3.4

1.

12.700

6.3

.1

.500!

1.270

50

2.920
s

.17

NOTES

MAX.
.210

MIN.

5.20

80

mWatt

625

4.3 2

*D
e1

INCHES

MILLIMETERS
MAX.
MIN.

ibz

Dissipation

Total Power

I.

T0-92

Volts

-91

SEATING PLANE

Voltages

T
-o2-

.2
.1

1,3

i.05

50!
5

2.670 .080

2.0 3

.10 5

NOTES:

Temperature

1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

C
C
C

-55 to

THIS SIDE.
3 (THREE LEADS) <^b2 APPLIES

BETWEEN

L|

AND

L2

<f>b APPLIES BETWEEN La AND 12.70 MM (.500")

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

case for 10 sec. max.)

electrical characteristics:*(TA = 25C unless otherwise specified)

2N4409
Static Characteristics*

Breakdown Voltage
mA, I B = 0)

2N4410

SYMBOL

MIN.

MAX.

MIN.

MAX.

UNITS

V(BR)CEO

50

80

Volts

V(BR)CER

80

120

Volts

V(BR)CBO

80

120

Volts

V(BR)EBO

Volts

Collector-Emitter
(I c

Breakdown Voltage
(I c = 500 nA, VBE( off) = 5V, R BE =
Collector-Base Breakdown Voltage
(I c = 10 M, I E = 0)
Collector-Emitter

8.2

K Ohms)

Emitter-Base Breakdown Voltage

(I E

= 10/iA, I c = 0)

Collector Cutoff Current

(VCB
(VCB
(VCB
(VCB

60V,I E
= 60V, I E
= 100V, I E
= 100V, I E

=0)
= 0, T A = 100 C)
= 0)
= 0, T A = 100C)

ICBO
ICBO
ICBO
^CBO

nA

10
1.0

IdA

10

nA

1.0

100

nA

Emitter Cutoff Current

(VBE = 4V, I c = 0)
Forward Current Transfer Ratio
(VCE = IV, I c = 1 mA)
(VCE = 1V, I c = 10 mA)

100

^EBO

hFE
ilFE

60
40

400

60
60

400

0.2

0.2

Volts

0.8

0.8

Volts

0.8

Volts

Collector-Emitter Saturation Voltage

(I c

mA,

IB

= 0.1

mA)

VcE(sat)

Base-Emitter Saturation Voltage

(I c = 1mA, I B = 0.1mA)
Base-Emitter Voltage

(I c

mA,

VCE

= 5V)

VBE(sat)

VnEfonl
421

0.8

2N4409
2N4410

Static Characteristics (continued)

2N4409

Dynamic

SYMBOL

Characteristics

MAX.

MIN.

MAX.

*f T

60

300

60

300

*c cb

12

12

PF

Ceb

50

50

pF

UNITS

Bandwidth Product
(I c = 10 mA, VCE = 10V, f = 30 MHz)

Current-Gain

2N4410

MIN.

MHz

Collector-Base Capacitance

(VCB = 10V, I E =0,

= 140 kHz)

Emitter-Base Capacitance

(VBE = 0.5V, I c =

"Indicates

JEDEC

0, f

= 140 kHz)

Registered Data.

422

Silicon

Transistors

The General Electric 2N4424 and 2N4425 types are NPN, silicon,
planar, passivated, epitaxial transistors intended for general
purpose industrial circuits. These transistors are especially suited for
high

level linear amplifiers or

industrial control applications.

medium speed switching

circuits in

FEATURES:

Low Saturation Voltage

High Beta

900
360

absolute

mW @
mW @

maximum

25 C Case

2N4424

25C Free Air 2N4425

ratings:

(25C)

(unless otherwise specify

2N4424 2N4425
Voltages

HSH
diameter

Collector to Emitter
Emitter to Base
Collector to Base

Current
Collector (Steady State)*

40

40

V CEO

V EBO

V CBO

60

60

V
V
V

i.

of

021

is

is

"r~r^

[00

H h

500

Ic

(Free Air at 25C) **

(Free Air at 65C) **
(Heatsink at 25C) **'

Pt
Pt
Pt

Temperature
Storage
Operating

360
250

T.,

55

to

Tj

500

mA

560
380
900

+150
+150

C
C

16 DIA.

+260

Determined from power limitations due

to saturation voltage at this current.

"Derate 2.88mW/C increase in ambient temperature above 25C.

""Derate 7.2 mW/C for rise in heatsink temperature above 25C.

r*

ALL DIMEN.

electrical characteristics:
DC CHARACTERISTICS

(25C)

(V (Ii

IcBO

100C)

IN

.1001.005
.520 MAX.

NCHES AMD ARE REFERENCE UNLESS TOLERANCED

(unless otherwise specified)

Min.

= 40V)
(V = 40V, T A =
(Vcb = 40V)
(V KB = 5V)

Collector Cutoff Current

Emitter Cutoff Current

*;|JJJf

(NOTE

mW
mW
mW

-Li

LEADS

%>" from case

Lead soldering, Vic'

for 10 sec. max.

Hie

017

Total Power
Total Power
Total Power

in

-* 4ffi
ZZ5

Dissipation

controlled

held

Max.

Ices

30
10
30

1 15 bo

100

lCBO

nA
mA

nA
nA

Forward Current Transfer Ratio

(Vce

4.5V, Ic

= 2 mA)

hyE

Breakdown Voltage (I c = 10 mA)

Collector Base Breakdown Voltage (Ic = 10 nA)
Emitter Base Breakdown Voltage (In =0.1 /xA)

Collector Emitter

Collector Saturation Voltage

3 mA, Ic
(Ib
50 mA)

Base Saturation Voltage

(I B

mA,

Ic

50

mA)

180

V(BH)('EO

40

V(BR)n)

60

V (BR)EBO

540

V
V
V

Va

.30

VbkCsuI)

.85

V
V

SMALL SIGNAL CHARACTERISTICS

Forward Current Transfer Ratio Collector Voltage
(Vc = 4.5V, Ic = 2 mA, f 1 kHz)
Forward Current Transfer
Ratio
Input Impedance

Output Admittance
Voltage Feedback Ratio

h,

180
Typical

'

= 10V, Ic = 1 mA,
= 1 kHz, T A = 25C)

(V

h
h,

180
5100

h e

14

/xmhos

.27

X10" 3

ohms

423

2N4424, 5

1000
1

1
'

V C E"5V

900

T 4 =25'c

^~

800
T A =25"C

\\

700

600

<
E

500
2

.4

.6

.8

10

8 10

20

40 60 80100

200

400 600600

-mA

lr

400

300

200
5V
It

2m A

100

.2
-40 -30 -20

-10

40
TEMPERATURE -

10

20

30

50

60

TO

60

90

.6

.4

V BE

100

"C

.8

1.4

1.2

1.0

- VOLTS

2 5
1

PARAMETERS VS TEMPERATURE

hie.

2.0
i

hrj.

V c -iov

Vioo'c

hoe

kHz

VCE (SAT]VS I C
Ic'Ib 20

/
25' c-

h.e

"

h,

hre

^^

-40 -30 -20

-10

10

20

30

TEMPERATURE

424

40
IN

50
C

60

70

80

90

100

2N4424, 5

30

28

\\

26

24

IMHl

TA

22

25C

v "o

20

J" 16
(

12
3.0

!2.5

'ARAMETEF s vs

mmVGF

10

-Jloe

Ic

ta

hoe

ImA

hr.

IKHi

-<c6o

25->c

hf.

hf,

h i.

h,.

2
6

10

V CE

IN

.6

LO

.8

2.0

VOLTS

6.0

4.1
.0

V EB OR V C B

20

8.0 10

40

VOLTS

III
v c =iov
f
*lkHz
TA

s
o

in

25C

ho

,.

ii

\\

3
a

OO

8_ i

Ab; r

"

n
1

ho.
1

\
1

^
c

.0 2

.0 *

.0

SO 9

j__

h|#

8 310

Li
-W

l r -m

425

20

10

V
/

I0MHI

40 6080100

f.

2N4424, 5

240

// fs

220
200

240

S*

Ta

Ta

'/a

220

STEP

$
V
A/

200

tt< '

220

STEP

180

160

160

140

140

160

a l40
E

120

100

"

100

"lOO

80

80

80

60

60

60

40

40

40

20 K-

20

'

2mA/
STEP

180

120

20

+ I00C

200

TA

25C

//

7/
'/

180

240

-30C

120

23

456789

10

Vce

Typical

Common

20
18

20

/'

16

=IO M A/STEP"

\
40 50
VC E

60

70

14

HHIO

^ 7^ /)
/

^ y,
_= /

80

10

Typical

Common

20

30

40

'

50

60

12

+ 100

5/A/STEP~

^
^
/.

'/,

'1

10
8

//
A/

/
**~

\
70 80

Emitter Characteristic Curves

426

'

T/s

'

;> >

16

18

30

1 D

20

|,2

-1 /]

+ 25C

T4

_1

10

20

'

14

12

hio

18

/
^

16

s/

14

<

-~-iOC
=IO/iA/STEP"

Emitter Current Characteristic Curves

\
20

30

40

50

60

70

80

Silicon

2N4983.6

Transistors

Electric SUS is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
four layer diode. The device is designed to switch at 8 volts with a 0.02% /C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages and to obtain transient free wave forms.

The General

Silicon Unilateral Switches are specifically designed and characterized for use in
monostable and bistable applications where low cost is of prime importance. These
devices are in the TO-18 hermetic package.

SCR

Cross Point Switching

Triggers

Frequency Dividers

absolute

ratings:

.209

$"
BOTE

(unless otherwise specified)

-65
-55

Range

to
to

+150
+125
300

Dissipation*

-30

Peak Reverse Voltage

DC Forward Anode

.230

DIMENSIONS WITHIN
JEDEC OUTLINE TO-18

Lead diameter

1:

is

controlled in the

250 from the seat

Between .250 and end o( lead a

xie between 0S0 and

ail",)

Storage Temperature Range

Junction Temperature

Over-Voltage Sensors

maximum

(25 C free
Power

EQUIVALENT CIRCUIT

Ring Counters

Applications Include:

175

Current*

DC Gate Current*t

ing plane.

ma
NOTE

"C

Shair

mW

Leads having

maximum diameter

OH

+ 001

below the seating plane ol the device

be within

007 ol true position

tive to a

mammum

NOTE

Measured Irom max

3:

reta-

width tab

diameter

ol

CIRCUIT SYMBOL

Volts

mA
mA

1.0

Amp

Peak Non-Recurrent Forward Current

25C)
(10 fisec pulse width, T A

5.0

Amps

held.

the actual device

Peak Recurrent Forward Current

(1% duty cycle, 10 /*sec pulse
width, T A
100C)

2.

is

0191 measured in gaging plane

000

.021

of

'Derate linearly to zero at 125C.

tThis rating applicable only in OFF state.

Maximum gate current in conducting state limited by

electrical characteristics:

maximum power

(25C)

rating.

(unless otherwise specified)

2N4986

2N4983

STATIC

Min.

Forward Switching Voltage

Forward Switching Current

Is

Holding Current

Typ.

6.0

Max.

Min.

10.0

7.0

Typ.

Max.
9.0

200

fiA

In

1.5

.75

mA

In
In

0.1
10.0

0.1

10.0

kA
mA

Ib
Ib

1.0
10.0

0.1
10.0

fiA

1.5

1.5

Reverse Current

(Vr
(Vr

= -30V,Ta = 25C)
= -30V, Ta = 100C)

Volts

500

Forward Current (off state)

(Vf
(Vf

= 5V, Ta = 25C)
= 5V, T a = 100C)

mA

Forward Voltage Drop (on state)

(If

= 175 mA)

Vf

Temperature Coefficient of Switching

Voltage (Ta
-55C to +100C)

Tc

%/C

.02

.02

Volts

DYNAMIC
(See Circuit 1)
(See Circuit 2)
Voltage (See Circuit 3)

Turn-on Time

Turn-off Time

t,r

Peak Pulse

Capacitance (0V., f == 1

MHz)

Vo
c

1.0

usee

25.0

iisec

Volts

3.5

3.5

2.5

427

1.0

25.0
2.5

pF

2N4983, 6
PARAMETER DEFINITIONS

Static

Characteristics

TEST CIRCUITS

IKA
-WA/-

MERCURY
RELAY

Circuit

L-'

OljuF"

Turn-on time

90%

<0

Turn-on Time,
is

Vs

IDUT

IKA
+ I2V.

(VF +.I(VS -VF ))

measured from the time the anode voltage

V s and Vf.

first

reaches

to the time

where the anode voltage has fallen

of the difference between

loon,

40

+ 5V

IMERCURY
RELAY

-t

DUT

Circuit 2

Turn-off Time,

ff

begun with the SUS in conduction and the relay contacts open. At t = the contacts close and the anode
is adjusted downward, so that when the anode voltage becomes positive, the SUS just remains off. The
turn-off time, t, is the time between initial contact closure and the point where the anode voltage passes up through zero
volts. The capacitor is allowed to fully charge to 5 volts, at which time the contacts are reopened and the SUS triggers on.

The

is

turn-off test is

driven negative. C

O.ljuF

IOKA

'WV
Circuit

15V --

JllOmsecl
MIN.

'

'IN

'

'o FF

"77^

28

CU

X!>

VS

>

TEMPERATURE

24

100mA

50mA-

/7
^y

12

10mA

S/

10

20

30
I.

70
50
60
40
-ANODE CURRENT-mA

80

90

100

-50

428

-25

+25

+50

+75

+100

+125

+150

+175

11.

\-n>MVM\. CKI3I n,s

1

2N4983, 6
?"
1-

1400
1

UJ
cc
<

|~

VALLEY CURRENT AND SWITCHING CURRENT VS TEMPERATURE f

1200

o
1000

1-

<n

800

J 600
I-

3
>iu
_i
_i

200
""

<
>

-.03

-50

-25

+ 25
+50 +75
+100
TA -AMBIENT TEMPERATURE-C

+150

+17 5

-02
-Of
+01
+.02
+.03
T -TEMPERATURE COEFFICIENT -% /'C
c
I

RWA RD VOLTAG

Mil

1?

drop vs AN0 DE CURRENT

FORWARD VOLTAGE DROP

1.6

FC

+ 125

VS.

TEMPERATURE

fl

Z00mA

A = 100 mA
I A =50nr~A~
_

T.A=IOmA

.6

7
10

-2 5

-5

ioo

C3

+ 50

+2 5

+75

+100

+12 5

+17

+1 50

I A -AN0DE CURRENT-mA

UZZ

CURRENT VS TEMPERATURE

B A

VA (

5v E

y
1

/
-j

AI
HAT

Vac

3v-

=t

-50

SEE (:ircuit 3

===

"s

:;:;::

VR

_, /

500 OHN
00 OHM S
500 0Hl\

IM

S t^ z

/ ;J

AS A FUNCTION OF OAn
resistance and charging
:apacitance.

20 OHMS
5

OHMS

+50

+100

+150

C)l

.1

TA -AMBIENT TEMPERATURE-"C

C-iiF

429

in

2N4983, 6

V = I5 volts

APPLICATIONS

CT

< 5 6k
-

"II
v

:2.7k

BINARY DIVIDER CHAIN

Uses fewer components than transistor flip
Output at "B" gives transient free
waveform.
flops.

2.7k

Hf.068

tD

.068

SUSS-2N4983

iook.fl

2N4986

25kA

MOTOR

SPEED CONTROL

AI3B

II5V

GE
C22B

60hz <~>

ikA

Switching action of the 2N498G allows smaller

capacitors to be used while achieving reliable

11 AI3B

.OI>iF

thyristor triggering.

10

+ o

kn

wv

+ o

INPUT

PULSE

'

.IjuF

47/1

(0)

2N4983

SUS is used to generate a rapid rise or fall

time by using energy stored in a capacitor.

PULSE

POSITIVE OUTPUT

(b)

OUTPUT OF CIRCUIT
OUTPUT OF CIRCUIT
(c)

(a)

(b)

_L

TYPICAL WAVEFORMS

RING COUNTER FOR INCANDESCENT LAMPS

\
SUS-2N4986

430

1>

INPUT
PULSE

INPUT TO
BOTH CIRCUITS

PULSE SHARPENERS

UNIVERSAL MOTOR

IOkA
VW

2N4983

+
OUTPUT

SERIES WOUND

&

IMF

OUTPUT
PULSE
NEGATIVE OUTPUT

Silicon

2N4984.5

Unilateral Switch
(SUS)

Electric SUS is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
four layer diode. The device is designed to switch at 8 volts with a 0.02% /C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages and to obtain transient free wave forms.

The General

Silicon Unilateral Switches are specifically designed and characterized for use in
monostable and bistable applications where stability of the switching voltage is
required over wide temperature variations. These devices are in the TO-18 hermetic package.
EQUIVALENT CIRCUIT

Ring Counters

Applications Include:

SCR

Triggers

Cross Point Switching

Frequency Dividers

Over-Voltage Sensors

maximum

absolute

(25 C free

ait",)

DIMENSIONS WITHIN
JEDEC OUTLINE TO-18

1: Lead diameter is controlled m the

zone between 050 and 250 trom the seat'

BOTE

ratings

irtg

plane

max

MOTE

(unless otherwise specified)

55 to

Junction Temperature Range

Power

350

Dissipation*

-30

Peak Reverse Voltage

DC Forward Anode

+200
+150

200

Current*

DC Gate Current*!
Peak Recurrent Forward Current
(1% duty cycle, 10 ^sec pulse

width,

TA

100C)

Peak Non-Recurrent Forward Current

25C)
(10 iisec pulse width, T A

2:

Between 250 and end

021

of lead a

Held

is

Leads having ma*

mum

diameter

m gagmg plane 0S4 -f- 001

below the seating plane of the device
be within 007 o! true position rela-

(019) measured

000
shall

65 to

Storage Temperature Range

ot

C
C

tive to a

mammum

NOTE

Measured from mat

3:

width tab

diameter

of

the actual device

mW
CIRCUIT

Volts

SYMBOL

mA
mA

-e

1.0

Amp

5.0

Amps

.048
.02$

INCHES AND ABE

REFERENCE UNLESS TOLERANCEO
ALL DlMEN.

IN

(NOTE

31

'Derate linearly to zero at 150C.

f This rating applicable only in

Maximum

OFF

state.

gate current in conducting state limited by

electrical characteristics:

maximum power

(25C)

rating.

(unless otherwise specified)

Min.

Forward Switching Voltage

Vs

Forward Switching Current

Is

Holding Current

Ih

Reverse Current

=
=

(V E
(V

-30V, T A
-30V, T A

= 25C)
= 150C)

Typ.

7.5

Max.

Min.

9.0

7.5

Typ.

.5

Max.
8.2

150
.05

UNITS

2N4985

2N4984

STATIC

.05

Volts

300

^A

1.0

mA

.1

.1

Ir

10.0

10.0

,uA
,uA

1b
1b

.1

10.0

.010
1.0

mA

Vf

1.5

1.5

Volts

Te-

.05

.02

%/C

Forward Current (off state)

(V F
(Vf

=
=

5V,
5V,

Ta
TA

= 25C)
= 150C)

Forward Voltage Drop (on state)

(If

200 mA)

Temperature Coefficient of Switching

Voltage (Ta
55C to +150C)

DYNAMIC
(See Circuit 1)
(See Circuit 2)
Voltage (See Circuit 3)

Turn-on Time

ton

Turn-off Time

trr

Peak Pulse

Vo
c

Capacitance (0V., f

MHz)

1.0

^sec

25.0

Msec

Volts

3.5

3.5
2.5

431

1.0

25.0

2.5

pF

2N4984, 5
PARAMETER DEFINITIONS
Static

Characteristics

TEST CIRCUITS

IKA

AA/V

MERCURY
RELAY

UJ
.

tz)IDUT

inn

+ I2V.
01>iF"
Circuit

is measured from the time the anode voltage first reaches

of the difference between Vs and W.

Turn-on time

90%

100/1

+ 5V.

\?

Turn-on Time,

vs

*vF + -'(vs -vF ))

to the time

where the anode voltage has fallen

'40

-if @ DUT

#-t

IMERCURY
RELAY
Circuit 2

Turn-off Time,

t ot(

begun with the SUS in conduction and the relay contacts open. At t = the contacts close and the anode
just remains ott. ine
is adjusted downward, so that when the anode voltage becomes positive, the SUS
up through zero
turn-off time, t, is the time between initial contact closure and the point where the anode voltage passes
reopened and the bUb triggers on.
volts. The capacitor is allowed to fully charge to 5 volts, at which time the contacts are

The

is

turn-off test is

driven negative.

0-lju.F

I0KA

VW-

O
Circuit

15V

llOmsecl
MIN. '

-*

I
'

MN

*t?>

~YYC~

'

'o FF

vs

DDE

V?

TEMPERATURE

RRE

24

100mA
20

50

12

'

A
J

mA|

10mA

10

20

30
I.

60
70
40
50
-ANODE CURRENT-mA

80

90

100

+ 25

432

+50

+75

+100

+125

+150

+175

2N4984, 5

TYPICAL CHARACTERISTICS
<
a.

1400

1
1

TEMPtKAl UKt
TEMPERATURE COEFFICENT OF SWITCHING VOLTAGE

1200

SWITCHING VOLTAGE

^
HH1

= 1000

\,

\\

I^M
^^^^p*
i^^X

9.2

^tl

800

lb
km
j

8.4

L^

8.0

ilpll^

\*v

600

400

4l

hi

l*|
7.6

ife-lill

200

7.2
I

-50

6.8

-25

+25

+50

+75

+100

+125

+150

+175

TA -AMBIENT TEMPERATURE-C
6.4

-.03

-.02
-.01
+.01
+.02
+.03
T -TEMPERATURE COEFFICIENT -% /C
c

+.04

1
|

FC

FORWARD VOLTAGE DROP

RWA RD VOLTAGE DROP VS ANODE CU RRENT

VS.

TEMPERATURE

I fi = 200mA
I A IOO

mA

I A =50mA
1/1=10

I A -AN0DE CURRENT- m A

100

10

-r\

mA

-50

-25

+25
+50
+75
+100
T -AMBIENT TEMPERATURE-C
A

+125

FORWARD AND REVERSE LEAKAGE

CURRENT VS TEMPERATURE

4i

61 V.r

5V

/
/OV-

AT

i
I

V PULSE AS A FUNCTION OF LOAD

RESISTANCE AND CHA RG NG
CAPACITANCE.

10

/y

/ ,R =

SEE

100 OHMS

CIF?CUIT

f>

== ====

::

b
j

^^

"4

\
S

'/

'

R=20 0HMS

'

+50
T. -AMBIENT

+100

+150

+200

.01

10

TEMPERATURE-'C

433

C-^iF

2N4984, 5

APPLICATIONS
-<r\j>-

12V

FUSE

lOOkil
'l.8kflL

.047/1

For rapidly rising voltages, circuit

& 14 volts. For slowly
increasing voltages, circuit triggers between

fuse.

&

17 volts.

A
D

2kA

.047/iF

triggers between 13.2

14

2N4985

&

OVERVOLTAGE PROTECTION CIRCUIT

For overvoltages, SCR turns on and blows

GEC32U

I00A.

_r

+I5V

>6.8kfl

10kHz OSCILLATOR

2N4984

Capacitor charges until switching voltage is

reached. When SUS switches on, inductor
causes current to ring. When current thru
SUS drops below holding current, device
turns off and cycle repeats.

<2>

OUTPUT
47X1

8kHz

4kH z

OSCILLATOR

2kHz

1kHz

+ 20V

FREQUENCY DIVIDER WITH TRANSIENT

FREE OUTPUT
Spikes in center of sawtooth are eliminated
in this circuit by triggering at gate.

SUS-2N4985

FREQUENCY DIVIDER CHAIN

Sawtooth Output from each stage
frequency of preceding stage.

is

one half

8kHz oscillator

SUS- 2N4985

434

Silicon

Economy

2N4987.90
Unilateral Switch
(SUS)

The General

Electric SUS is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal"
four layer diode. The device is designed to switch at 8 volts with a 0.02% /C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages and to obtain transient free wave forms.
Silicon Unilateral Switches are specifically designed and characterized for use in
monostable and bistable applications where low cost is of prime importance. These
devices are in the low cost, TO-98 plastic package.

SCR

Frequency Dividers

^^-O

C_y

EQUIVALENT CIRCUIT

Cross Point Switching

Triggers

absolute

Ring Counters

Applications Include:

maximum

iTGS

Over-Voltage Sensors

V^

ratings:

DIMENSIONS WITHIN
JEOEC OUTLINE TO-98
NOTE

1:

Lead diameter

(unless otherwise specified)

ing plane.

65 to

Junction Temperature Range

55 to

+150
+125
300

Dissipation*

-30

Peak Reverse Voltage

DC Forward Anode

in

the

Between .250 and end of lead a

max. of .021

Storage Temperature Range

Power

controlled

is

zone between .070 and .250 from the seat-

ait",)

175

Current*

DC Gate Current*!

r~
ALL DIMEN. IN INCHES AND ARE
REFERENCE UNLESS TOLERANCED

mW

MIN

SEATING

PLANE

i_

CIRCUIT SYMBOL

Volts

3 LEADS

mA
mA

017'
01

-002
-;OOI

(NOTE

1.0

Amp

Peak Non-Recurrent Forward Current

(10 usee pulse width, T A
25C)

5.0

Amps

held.

.900

Peak Recurrent Forward Current

(1% duty cycle, 10 usee pulse
width, T A
100C)

is

I)

'Derate linearly to zero at 125C.

fThis rating applicable only in OFF state.

Maximum gate current in conducting state limited by

electrical characteristics:

maximum power

(25C)

rating.

(unless otherwise specified)

2N4987

STATIC

Min.

Forward Switching Voltage

Forward Switching Current

Is

Holding Current

Vs

Typ.

2N4990
Max.
10.0

6.0

Min.

Typ.

Max.
9.0

7.0

Volts

500

200

uA

Ih

1.5

.75

mA

1r
Ir

0.1
10.0

0.1
10.0

A
A

Ib
Ib

1.0

0.1
10.0

/"A

10.0
1.5

1.5

Reverse Current

(V R
(Vr

=
=

-30V, T A
-30V, Ta

=
=

25C)
85C)

Forward Current (off state)

(Vf

(V F

= 5V, T A = 25C)
= 5V, Ta = 85C)

uA

Forward Voltage Drop (on state)

(If

175

mA)

Vf

Temperature Coefficient of Switching

Voltage (Ta
-55C to 85C)

.02

Tc

Volts

%/C

.02

DYNAMIC
(See Circuit 1)
(See Circuit 2)
Voltage (See Circuit 3)

Turn-on Time

ton

Turn-off Time

trr

Peak Pulse

Capacitance (0V., f

= 1 MHz)

Vo
C

3.5

1.0

usee

25.0

usee

Volts

3.5

2.5

435

1.0

25.0
2.5

PF

2N4987, 90
PARAMETER DEFINITIONS

Static

4^

H*

Characteristics

TEST CIRCUITS

DUT

/
I

+ I2V
Circuit

I* t

Turn-on Time,

Vs

U n n tim
measured from the time the anode voltage
L
i of
"S
,i
90%
the difference between Vs and W.
s

IOOA

reaches

to the time

(VF +.I(VS -VF ))

where the anode voltage has fallen

'40

+ 5V-TL

first

on

:mercury
RELAY

DUT

Circuit 2
Turn-oflf Time, t of(

The

begun with the SUS in conduction and the relay contacts open. At t = the contacts close and the anode
is adjusted downward, so that when the anode voltage becomes positive, the
SUS just remains off. The
turn-off time, tf,, is the time between initial contact closure and the point where the anode voltage
passes up through zero
volts. The capacitor is allowed to fully charge to 5 volts,
at which time the contacts are reopened and the SUS triggers on.

is

turn-off test is

driven negative.

O.ljuF

I0KA
O
Circuit

15V --

JllOmsecl
MIN.

'

VW-

't

yy

vs

>

2on

tl>
|

~~Y~\fiv~~

cu

2.0

30
I.

40
50
60
70
-ANODE CURRENT-mA

+ 100

436

+125

+150

+175

TYPICAL CHARACTERISTICS

TEMPERATURE COEFFICENT OF SWITCHING VOLTA GE

SWITCHING VOLTAGE

88

i^^B

id

iiMP^
P^llll

tlfli

i^
Mil

^t

^fei
Ifeiii
7.2

+25
+50 +75
+100
TA -AMBIENT TEMPERATURE-C

+125

+150

+175

6.4

-.03

-.02
-.01
+.01
+.02
+.03
T -TEMPERATURE COEFFICIENT -% /'C
c

+.04

_L.I
|

FC

FORWARD VOLTAGE DROP

1.6

VS.

II

TEMPERATURE

RWA RD VO LT AGE DROP VS ANO BE CU RRENT

1

1.4

I
1

A 200mA
=

100

m
"

^-_

50mA

1-0

I 4 =IOmA

-2 5

-5

100

10

I A -AN0DE CURRENT-mA

c)
+2 5
+S
+75
+100
T -AMBIENT TEMPERATURE-C
A

+12 5

+17

+1!50

CURRENT VS TEMPERATURE

*-3 ov-

//
r

' ^R=

V PULSE AS A FUNCTION OF LOAD

resistance ano charg NG
:apacitance.
SEE CllRCUIT 3

10

100 OHN S

s
,

...

6
/

s
^R

+50

+100

+150

20 OHMS

.01

10

-AMBIENT TEMPERATURE-"C

C-^F

437

2N4987, 90

V = I5 volts

APPLICATIONS

5.6 k

BINARY DIVIDER CHAIN

Uses fewer components than transistor flip
flops. Output at "B" gives transient free
waveform.

iok

.0033

--ii-'2.7k

2.7k
"A"

tD

-\(r

&\5

.068

SUS S

&

.066

2N4987

lookn.

2N4990
2N4986

GE
C22B

25kn

MOTOR

SPEED CONTROL

II5V

60HZ

Switching action of the 2N4990 allows smaller

capacitors to be used while achieving reliable

IN5059
ik/i

VIN5059

ie
.OIjuF

thyristor triggering.

+ o

w\
iokn

+ o

SERIES WOUND

UNIVERSAL MOTOR

IOkA
*V\A,

/"7)2N4987
INPUT
PULSE

(a)

".IjuF

l-W

INPUT
PULSE

POSITIVE OUTPUT

(b)

SUS is used to generate a rapid rise or fall

time by using energy stored in a capacitor.

OUTPUT OF CIRCUIT
OUTPUT OF CIRCUIT
(c)

(a)

(b)

JV.

TYPICAL WAVEFORMS

Ring Counter for Incandescent Lamps.

SUS-2N4990

438

NEGATIVE OUTPUT
15V

INPUT TO
BOTH CIRCUITS

PULSE SHARPENERS

OUTPUT
PULSE

SUS-2N4986

Silicon

Economy

2N4988.9

Unilateral Switch
(SUS)

The General

Electric SUS is a silicon planar, monolithic integrated circuit havthyristor electrical characteristics closely approximating- those of an "ideal"
four layer diode. The device is designed to switch at 8 volts with a 0.02%/C teming-

perature coefficient. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages and to obtain transient free wave forms.
Silicon Unilateral Switches are specifically designed and characterized for use in
monostable and bistable applications where stability of the switching voltage is
required over wide temperature variations. These devices are in the low cost, TO-98
plastic package.

Ring Counters

SCR

Triggers

Cross Point Switching

Frequency Dividers

Over- Voltage Sensors

Applications Include:

absolute
L^

maximum

re

EQUIVALENT CIRCUIT

uV

ratings

DIMENSIONS WITHIN
JEDEC OUTLINE TO-98
NOTE

1: Lead diameter is controlled In the

zone between 070 and .250 from the seat-

ing plane.

Storage Temperature Range

65 to

Junction Temperature Range

55 to

Power Dissipation*

+200
+150
350

-30

Peak Reverse Voltage

DC Forward Anode Current*

200

DC Gate Current*f

C
c

held.

.500

SEATING

MIN

PLANE

mW
LEADS
on*-002

CIRCUIT SYMBOL

Volts

mA
mA

(NOTE

1.0

Amp

Peak Non-Recurrent Forward Current

(10 Msec pulse width, Ta
25C)

5.0

Amps

is

ALL OIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

Peak Recurrent Forward Current

(1% duty cycle, 10 ^sec pulse
width, Ta
100C)

Between .250 and end of lead

max. of .02!

8i\r) (unless otherwise specified)

II

'Derate linearly to zero at 1S0C.

fThis rating applicable only in OFF state.

Maximum gate current in conducting state limited by

electrical characteristics:

maximum power

(25C)

rating.

(unless otherwise specified)

2N498S

STATIC

Min.

Forward Switching Voltage

Forward Switching Current

Holding Current

Ih

Typ.

7.5

2N4989
Max.

Min.

9.0

7.5

Typ.

8.2

150

Is

.05

.5

UNITS

Max.

.05

Volts

300

mA

1.0

mA

Reverse Current

(Ve= -30V, T A =
(V R

-30V, T A

25C)
100C)

Ir
Ik

.1

.1

mA

10.0

10.0

ij.A

Ib
Ib

.1

.010

10.0

1.0

mA
mA

Vf

1.5

1.5

Volts

Tc

.05

.02

%/C

Forward Current (off state)

(Vf
(Vf

= 5V, T A = 25C)
= 5V, T A = 100C)

Forward Voltage Drop (on state)

(If

= 200 mA)

Temperature Coefficient of Switching

Voltage (Ta
-55C to 100C)

DYNAMIC
(See Circuit 1)
(See Circuit 2)
Voltage (See Circuit 3)

Turn-on Time

Turn-off Time

Peak Pulse

Vo
C

Capacitance (0V., f

MHz)

3.5

1.0

fisec

25.0

iiisec

Volts

3.5

2.5

439

1.0

25.0
2.5

pF

2N4988, 9
PARAMETER DEFINITIONS
Static

Characteristics

TEST CIRCUITS

DUT
Circuit

Turn-on Time,
Turn-on time

vc

/
H

+ I2V-Z1

r*

t on

measured from the time the anode voltage

90% of the difference between Vs and Vr.
is

iooa

reaches

(VF +.I(VS -VF

))

where the anode voltage has

to the time

fallen

'40

if @

+ 5V,

first

MERCURY
RELAY

DUT

Circuit 2

Turn-off Time,
The

t off

begun with the SUS in conduction and the relay contacts open. At t = the contacts close and the anode
is adjusted downward, so that when the anode voltage becomes positive, the SUS
just remains off. The
turn-off time, t,f, is the time between initial contact closure and the point where the anode voltage
passes up through zero
volts. The capacitor is allowed to fully charge to 5 volts, at which time
the contacts are reopened and the SUS triggers on.
is

turn-off test

is

driven negative. C

O.ljtiF

I0KA

VW-

Q
Circuit 3

I5V--

JllOmsecl
MIN.

'

I
'

>

X!)

2on

""TKK""

VS TEMPERATURE

c f-H

100mA
1

jt

10mA
y S y '/
+-

u_

i^

10

20

30
I.

40
50
60
70
-ANODE CURRENT-mA

80

90

100

-5

440

-2 5

C)

+ 25

+75

+ DO
1

+i 25

+ 1!

+ 17 5

2N4988, 9

TYPICAL CHARACTERISTICS
<
1400
TEMPERATURE COEFFICENT OF SWITCHING VOLTAGE

vs.

1200

1000

s
<"

xv

800

600

400
w

200

-50

-.03

+25
+50 +75
+100
TA -AMBIENT TEMPERATURE-C

+125

+150

+175

-.02
-.01
+.01
+.02
+.03
T -TEMPERATURE COEFFICIENT -% /C
c

FC

-25

||

RWA RD VOLTAGE DROP VS ANODE CU RRENT

1.2

1.0

.9

.6

-25
7

I A -ANODE

'

+125

100

10

+25
+50
+75
+100
T -AMBIENT TEMPERATURE-C
A

CURRENT-mA

CURRENT VS TEMPERATURE

/y
f

/ ^R *

SEE

100 OHN S

*\ \ s
20 OHMS
5

OHMS

__..

.01

C-uF
+50
+100
+150
+200
TA -AMBIENT TEMPERATURE-'C

441

CIF?CUIT

= =-

fa

-50

,H-

/_

V PULSE AS A FUNCTION OF LOAD

RESISTANCE AND CHA RU Nt>
CAPACITANCE.

:': ::

2IM4988, 9

APPLICATIONS
-<f\_p-

12V

FUSE

iookn
'i.8kA

.047juF

OVERVOLTAGE PROTECTION CIRCUIT

For overvoltages, SCR turns on and blows
fuse. For rapidly rising voltages, circuit
triggers between 13.2 & 14 volts. For slowly
increasing voltages, circuit triggers between
14 & 17 volts.

2N4989

A
D

'2kn

.047,/uF

GEC32U

ioon.

X"

+I5V

e 6.8 k n

10kHz OSCILLATOR

2N4988

Capacitor charges until switching voltage is

reached. When SUS switches on, inductor
causes current to ring. When current thru
SUS drops below holding current, device
turns off and cycle repeats.

.OIjuF

IOOjuH

OUTPUT

^ 4711
4

t
8kHz

4 k Hj

OSCILLATOR

2kHz

kHz

+ 20V

FREQUENCY DIVIDER WITH TRANSIENT

FREE OUTPUT
Spikes in center of sawtooth are eliminated
in this circuit by triggering at gate.

SUS-2N4989

FREQUENCY DIVIDER CHAIN

Sawtooth Output from each stage
frequency of preceding stage.

is

one half 8kHz 0SCILLATOR

sus - 2N4989

442

Economy

Silicon

Bilateral

Switch

(SBS)

The General Electric SBS is a silicon planar, monolithic integrated circuit

having the
electrical characteristics of a bilateral thyristor. The
device is designed to switch at
8 volts with a 0.02 %/C temperature coefficient and excellently matched characteristics
in both directions.
gate lead is provided to eliminate rate effect and to obtain trig-

gering at lower voltages.

The

Silicon Bilateral Switches are specifically designed and characterized

for applicawhere stability of switching voltage over a wide temperature range and
well
matched bilateral characteristics are an asset. They are ideally suited for half

tions

and

wave triggering

full

2N4991

is

in the

low

in

cost,

TO-98

maximum

absolute

SCR and

low voltage

Triac phase control circuits

wave
The

plastic package.

(25C free

ratings:

Storage Temperature Range

Operating Junction Temperature Range

65
-55

+150
+125

to

to

Power Dissipation*
DC Forward Anode Current*
DC Gate Current *f
Peak Recurrent Forward Current
(1% duty cycle, 10 ^sec pulse
width, T A
100C)
Peak Non-Recurrent Forward Current
(10 Msec pulse width, Ta
25C)
Derate linearly to zero at 125C.

300
175
5

air)

(unless otherwise specified)

C
C

mW

mA
mA

NOTE

1: Lead diameter is controlled in the

zone between .070 and .250 from the seat-

ing plane.

Between .250 and end

max. ot .021

1.0

Amp

5.0

Amps

is

of lead a

held.

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

T0-9B

EQUIVALENT CIRCUIT

fThis rating applicable only on OFF state. Maximum gate current in

conducting state limited by maximum power rating.

2Z
CIRCUIT SYMBOl

electrical characteristics:**

(25C)

(unless otherwise specified)

STATIC

Min.

Switching Voltage

Vs

Switching Current

Is

Absolute Switching Voltage

V S2 Vbi

Difference

Typ.

Max.

10
500
.5

V
,uA

Absolute Switching Current

Difference
1

Holding Current

100

pA

Ih

1.5

mA

Ib
Ib

1.0

iiA

10.0

pA

Is2

Isi

Current (Off State)

(V,
(Vr

= 5V, Ta = 25C)
= 5V, Ta = 85C)

Temperature Coefficient of Switching Voltage

(T A

= -55Cto+85C)

To

%/C

.02

Forward Voltage Drop (On State)

(If

175

mA)

VF

1.70

DYNAMIC
Turn-on Time

(See Circuit 1)
Peak Pulse Amplitude (See Circuit 3)
Turn-off Time (See Circuit 2)
**This device
limits

a symmetrical negative resistance diode.

shown apply in either direction of current flow.
is

Vo
t
All electrical

443

1.0

iitsec

3.5

30.0

/isec

2N4991
STATIC CHARACTERISTICS

1 82

X SI

-P

Tv
*S2

sl

+v

*BI

TEST CIRCUITS

MERCURY RELAY

D.U.T.

Circuit

v f +.kvs -vf

Turn-on Time,

MERCURY RELAY

TURN OFF TEST; R, = R 2 = 500

ADJUSTED TO POINT WHERE
TURN- OFF JUST OCCURS

SI

C,

Circuit 2

Turn-off Time,

'off

t off

(R,

R 2 )CI

15V

IOmS MIN

l_

i:20.n.

Circuit 3

Peak Pulse Amplitude,

444

If

2N4991

TYPICAL CHARACTERISTICS

io.

TEMPERATURE COEFFICENT OF SWITCHING VOLTAGE y

x^

VS
SVITrHIMfi

9.6

vm

TARF

9.2

8.8

O
>

"^

8 4

m^^p
fetit
^IfeM
IteM

8.0

o
t
S

g 800
a.

3 700

HOLDING CURRENT AND SWITCHING CURRENT

VS TEMPERATURE

\
\X

| 600
o
S 500

^1^

7.6

900

ltei
PSltl

w 300

6.8

200

^X

6.4

100

|
-.03

-.02

-.01

+.01

+.02

+.03

+.04

-65

+ 55
+ 95
+ 15
T -AMBIENT TEMPERATUREA

-25

+ 175

+135

1.8

Mill

II

VI.)L
,

1.3

>

1.2

- [ =200 m

i4

r\

I A =100 m A

1.2

A =50mA

I A =l0mA

1.0

-50
I.-AN0DE CUFtRENT-mA

445

-25

+75
+100
+ 25
+50
AMBIENT TEMPERATURE-C

+125

+150

+175

2N4991

TYPICAL CHARACTERISTICS

lb

i
i

OFF
vs

'off

"

14

""
I

100m A

25C

13

!2
i

II

+ 25 +50 +75 +I00

TA -AMBIENT TEMPERATURE-'C

+I25

+I50

+I75

\
20

30

60
40
50
I. -ANODE CURRENT-

70

90

80

I
I

I00

AI A2"

10

V PULSE AS A FUNCTION OF LO AO

CAPACITANCE
8

S tt C mc Ul

R=500 OHMS
R=K30

^_

OHMjL

""RVfSoOH

'-7 =

20 OK MS-

4
R

5 OHMJ

0.1

.01

-50

+ 50

+100

+150

+200

446

C-

/iF

I00

MO

Economy

Silicon

Switch

Bilateral

(SBS)

The General

Electric SBS is a silicon planar, monolithic integrated circuit having the

electrical characteristics of a bilateral thyristor. The device is designed to switch at
8 volts with a 0.02% /C temperature coefficient and excellently matched characteristics
in both directions,
gate lead is provided to eliminate rate effect and to obtain trig-

gering at lower voltages.

The

Silicon Bilateral Switches are specifically designed and characterized for applicawhere stability of switching voltage over a wide temperature range and well
matched bilateral characteristics are an asset. They are ideally suited for half wave
and full wave triggering in low voltage SCR and Triac phase control circuits. The
2N4992 is in the low cost, TO-98 plastic package.

tions

absolute

maximum

ratings:

Storage Temperature Range

Operating Junction Temperature Range

-65
-55

(25C free

to
to

+150
+150
350
200

Power Dissipation*
DC Forward Anode Current*
DC Gate Current^
Peak Recurrent Forward Current
(1% duty cycle, 10 /xsec pulse
width, Ta
100C)
Peak Non-Recurrent Forward Current
25C)
(10 ^sec pulse width, T A

air)

(unless otherwise specified)

C
C

mW

NOTE

1; Lead diameter is controlled in the

zone between .070 and .250 from the seating plane. Between .250 and end of lead a

mA
mA

max. of .021

is

held.

T~~r
ALL NMEN. IN INCHES AND ARE
REFERENCE UNLESS TOLERANCED

.500

SEATING

MIN

PLANE

TO-98

1.0

Amp

5.0

Amps

EQUIVALENT CIRCUIT

*Derate linearly to zero at 150C.

fThis rating applicable only on
conducting state limited by

OFF state. Maximum gate

maximum power ratings.

current

in

2Z
CIRCUIT SYMBOL

electrical characteristics:**

(25C)

(unless otherwise specified)

STATIC

Min.

Max.
9.0

Switching Voltage

Vs

Switching Current

Is

120

mA

Igf

100

fiA

Forward Gate Current

(Vp

5V, Rl

7.5

to Trigger

Ik n)

Absolute Switching Voltage

Difference

VS2

Vsi

.2

Absolute Switching Current

Difference

.5

Ih

Holding Current
Current (Off State)

10.0

Isi

Is2

= 25C)
= 100C)

V
pA

mA

Ib

0.1

juA

Ib

10.0

pA

Tc

.05

Vf

1.70

Turn-on Time

ton

1.0

Turn-off Time

toff

30

Peak Pulse

Vo

(V F
(V F

5V, Ta
5V, Ta

Temperature

(T

Coefficient of Switching Voltage

= -55C

to+100C)

Forward Voltage Drop (On State)

(If

200

mA)

%/C

DYNAMIC
(See Circuit 1)
(See Circuit 2)
Amplitude (See Circuit 3)

**This device
limits

is

a symmetrical negative resistance diode.

shown apply

in

either direction of current flow.

All electrical

447

3.5

/usee
/usee

2N4992
I

STATIC CHARACTERISTICS

IH

_
I

L._.^

V B2

F,

ISZ

IBI

V FZ

TEST CIRCUITS
MERCURY RELAY

Circuit

Turn-on Time,

F +.I(VS

'

-VF

tG

MERCURY RELAY

TURN OFF TEST; R, = Rg = 500

ADJUSTED TO POINT WHERE
TURN- OFF JUST OCCURS

il

C,

Circuit 2

'off

Turn-off Time, t oH

6= (R|

R 2 )CI

O.I/uF

IOK

-vw15V

lOmS MIN

o-&

1_

20 Si.
D.U.T

Circuit 3

Peak Pulse Amplitude, V

TYPICAL CHARACTERISTIC CURVES

1
1

^
OFF
A

'

14

'of

VS ANODE CURRENT

100m A

T.

25"C

13

12

200

II

100
10

9
100

+25 +50 +75 +100

TA -AMBIENT TEMPERATURE -*C

+125

+150

+175

448

10

20

30

40
50
60
70
I. -ANODE CURRENT-mA

80

90

100

HO

2N4992

TYPICAL CHARACTERISTICS
i

TEMPERATURE COE FFI CEN T

F S WIT CHING VOLTAGE

700

VS

9.6

600

<

9 2

<
V)
l-

4.

500

8.8

>

2
o
>
o
z
I
o
t

Hi

8.4

ifeM
W^Mi
lfc

=>

400

\I

Ifeia

8.0

300

fc^

7.6

S
>m 7.2

200

^s

100
6.8

6.4

-50

-25

+50

+25

+75

+100 +125

+150

+175

1
-.03

-.02

+.01

+.02

+.03

+.04

V-TEMPERATURE C0EFFICIENT-%/C

II

II!

II

'

/
f

I.

1200mA
1
1

I fl *I00 m A
A -50mAI A -IOmA

+ 25
+50
+76
+100
AMBIENT TEMPERATURE -*C

I.-AN0DE CURRENT-mA

LE VKA< E C URR ENT VS

+125

+150

+175

TEH.IPER ATU RE

.IO

V PULSE AS A FUNCTION OF LO AD

CAPACITANCE

A. A2

8
R

500 OHMS

R= 100 OHMS.

tj

>

S bt C INC Ul

__

"""R*

r5

50 OH

\Ai

_l

20 Or

4
R

0.

OH WJ

>
2

-50

+100
+150
+50
TA -AMBIENT TEMPERATURE -*C

+200

0.1

.01

449

10

2N4992

APPLICATION IN HYSTERESIS-FREE PHASE CONTROL CIRCUIT

and
a simple hysteresis-free phase control circuit intended for lamp dimming
(or
hysteresis
similar applications. The circuit requires only one RC phase lag network. To avoid the
cycle
half
"snap-on") effect, the capacitor, C, is reset to approximately volts at the end of every positive
lead. At the
(for pot values such that no power is applied to the load) This is accomplished using the gate
from C
flows
current
gate
voltage,
capacitor
end of the positive half, as the line voltage drops below the
half
negative
In
the
volts.
out through the gate, Dl and 47k n resistor. The SBS fires and discharges C to
respectively.
cycle diodes D2 and Dl clamp the gate voltage to ground and block the flow of gate current
requirements of Dl and D2 are easily met. Any diode with V R > 10 volts works fine. For-

The

circuit in

Figure 1

is

Electrical

fairly good since the voltage across

ward conductance must be

across the Triac gate, the

SBS

6RS5GC1UAJ1 (common

cathode)

gate,

D2

at

3mA

must be smaller than the drop

The General Electric
choice. These are available from

at the trigger current of the SBS.

and Dl

dual diode makes an excellent

General Electric Semiconductor Products Department, Lynchburg, Virginia.

Figure 2 shows the excellent degree of phase control available in the

120/iA).
4>max = 155 (V s = 7.5 volts, I s

circuit.

For the worst case

GE
FIGURE

II5VAC

TRIAC

SC40B
SC4IB

SBS 2N4992
DI.D2-GE6RS5GCILAJI
-COMMON CATHODE

ANGLE VERSUS I s FOR,

HYSTERESIS FREE PHASE CONT ROL

FIRING

riBfMIIT

S.4
cc

f("U

MN1ITIAI

PAPAf

VOLTAGE GOING IN TO HALF CYCLE)

S. ASSUMED -1 VOLT.

cc

FIGURE 2

\J

o
< .3
Id

O
tr

CD

<

b = 7-

=1

15

vac

v =a

= .22

/iF

'S

Vc (0)=-l

"S

V =8.5
S

1
130

140
150
160
FIRING ANGLE -DEGREES

450

170

180

unit,

Silicon

Bilateral

Switch

(SBS)

The General Electric SBS is a silicon planar, monolithic integrated circuit

having the
electrical characteristics of a bilateral thyristor.
The device is designed to switch at
8 volts with a 0.02 %/C temperature coefficient and
in both directions.

excellently

gate lead

is

gering at lower voltages.

matched characteristics

provided to eliminate rate effect and to obtain trig-

The

Silicon Bilateral Switches are specifically designed and characterized

for applicawhere stability of switching voltage over a wide temperature range and well
matched bilateral characteristics are an asset. They are ideally suited for half
wave
and full wave triggering in low voltage SCR and Triac phase control circuits
The
2N4993 is in the TO-18 hermetic package.

tions

maximum

absolute

ratings:

Storage Temperature Range

Operating Junction Temperature Range

-65 to
-55 to

(25C
+200
+150

Power Dissipation*
DC Forward Anode Current*
DC Gate Current *f

350
200

free air)

(unless otherwise spec ified)

C
"C

mW
mA
mA

Peak Recurrent Forward Current

(I'A duty cycle, 10 /xsec pulse

width, Ta

100C)

Peak Non-Recurrent Forward Current

(10 Msec pulse width, T A
25 C)

1.0

Amp

5.0

Amps

EQUIVALENT CIRCUIT

'Derate linearly to zero at 150C.

tThis rating applicable only on OFF state. Maximum
gate current
conducting state limited by maximum power rating.

in

^z
CIRCUIT SYMBOL

electrical characteristics:**

(25C)

(unless otherwise specified)

STATIC

Min.

Switching Voltage

Vs

Switching Current

Typ.

V S2 v sl

Difference

Absolute Switching Current

Difference
I

Holding Current

S2

.5

=
=

5V,Ta
5V, T A

= 25C)
= 100C)

100

^A

Ih

1.5

mA

In
Ib

1.0

fx.A

10.0

^A

I S1

Current (Off State)

(V f
(V f

500

Is

Absolute Switching Voltage

Max.
10

Temperature Coefficient of Switching Voltage

(T

= -55C

to+100C)

+ .02

Tc

Forward Voltage Drop (On State)

(If

200

mA)

Vr

%/C
1.70

DYNAMIC
Turn-on Time

(See Circuit 1
(See Circuit 2)
(See Circuit 3)

Peak Pulse Amplitude

Turn-off Time

**This device
limits

is

a symmetrical negative resistance diode.

shown apply

in

1.0

//sec

30.0

/xsec

3.5

All electrical

either direction of current flow.

451

2N4993

STATIC CHARACTERISTICS

IB2

*S\

-^~r

jl
T
rS2

VS

+v

X BI

TEST CIRCUITS

MERCURY RELAY

D.U.T.

-*\

r-i

-1*00 1*-

Circuit

'

LV

**

F
F +.i(vs

-vF

Turn-on Time,

t on

MERCURY RELAY

TURN OFF TEST; R, = R 2 = 500

ADJUSTED TO POINT WHERE
TURN- OFF JUST OCCURS

C,

Circuit 2

Turn-off Time,

off^

t of f

{R|

R 2 )CI

15V

IOmS MIN

1_

;:

Circuit 3

Peak Pulse Amplitude,

ZOSl

452

2N4993

TYPICAL CHARACTERISTICS

10.

TEMPERATURE CO EFFICENT OF SWITCHING voirine

VS
SWITCHING VOLTAGE

-03

r~

-.02
-.01
+.01
+.02
+.03
TC -TEMPERATURE COEFFICIENT-%/C

ii

in

ill

1.8

ii

+95

+135

t~i

nr~

i
i

FORWARD VOLTAGE DROP VS AMBIENT TEMPERATURE

7,

+55

+ 15

T -AMBIENT TEMPERATURE -C
A

~
i

,T
1

+.04

~t/

'
1

10

-25

100

I -ANODE CURRENT-mA
A

453

+ 25
+50
+75
+100
AMBIENT TEMPERATURE-""C

+125

+150

+175

2N4993

TYPICAL CHARACTERISTICS

15

500

lit"

400

ff

vs

AM

T.
IA

100m A

25C

ID

< 300
m
N ZOO

Z
o
cc
I-

100

in
*"

-50

-25

+25

+50

+75

+100

+125

+150

+175
?

T& -AMBIENT TEMPERATURE-C

c
70
60
I. -ANODE CURRENT-mA

80

90

100

.10

\x A2

PULSE AS A FUNCTION OF LOAD

RESISTANCE AND CHARGING
CAPACITANCE
SEE CIRCUIT 3
V

500 OHMS

I
C

-50

+50
+100 +150
T.-AMBIENT TEMPERATURE -*C

+200

454

/iF

100

no

Silicon

2N5060
Controlled Rectifier
0.8A

RMS

thru

2N5064

UP TO 200 VOLTS

TYPICAL APPLICATIONS:

Sensors

Controls

Small Motors
Small Lamps
Remote

Temperature
Pressure

Dryness

Proximity
Switching

Voltage

Solid-State Relay
Relay Driver
Counter
Low Power Inverter

Current

Amplifiers (gate)

Timers

1-CATHODE
2- GATE

SEATING PLANE

120V AC

Logic Circuits

Line Operation

INCHES

SYMBOL
A
*b
*b2

FEATURES:

4>D

200 /iA Gate

6-Amp

e
e1

Sensitivity

Surge

L
Li

30 through 200 Volt Selection

Plastic TO-92 Package

L-2

Q
S

Low V F

1.

2.

3.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM (D

VOLTAGE. V DRM (2)

TYPE

Tc =

2N5060
2N5061
2N5062
2N5063
2N5064

-65

to +125

T c = -65C

30 Volts*
60
100
150
200

to

+125C

.0 2

9
5
.12 5 .16 5
.0 9 5
5
.0 4 5 .0 5 5
_
.13 5
.0

.17 5

.0

.2

.1

^50 O
.250
.1

08

MIN.
MAX
4 5 8
5.3 3
4
7
.5 33
.4
7
.4 8 2
4.9 6
5.2
39 4 4. 9
2.4 2
2 6 6

NOTES
1,3

1.15

1.39

3.4 3

12.70

.105

6.3 5
2.9 3
2 4 2

.0

1.2 7

_
-

1,3

3
3
2

2.6 6

THREE LEADS.
CONTOUR OF THE PACKACE BEYOND THIS ZONE IS
UNCONTROLLED.
(THREE LEADS) 4>b2 APPLIES BETWEEN Li AND L2*b APPLIES BETWEEN L 2 AND.5INCH{I2 70MM)
FROM SEATING PLANE. DIAMETER IS UNCONTROLLED
IN L, AND BEYOND. 5 INCH (12.70 MM FROM SEATING
PLANE.

NON-REPETITIVE PEAK
REVERSE VOLTAGE, Vr S M <2
T c = -65C

to

45 Volts*

Volts*
Volts*

200 Volts*

230 Volts*

Volts*

'

3)

+125 C

80 Volts*
125 Volts*
180 Volts*

I
On-State Current,

I T (rms) (4)

0.8
1

TSM

Peak Forward Gate Current, I GM

Peak Reverse Gate Voltage, V GM
Storage Temperature,

T ST g

Operating Junction Temperature, Tj

R G k = 1000 ohms.
Values apply for zero or negative gate voltage only.
Half sine wave voltage pulse, 5 millisecond duration.
4 Maximum Allowable Case Temperature is
67C for half sine wave of current at 60 Hz.
indicates JEDEC Registered Data.
.cc
3

6
6

60 Volts*
100 Volts*
150 Volts*

Peak One Cycle Surge (non-rep) On-State Current,

.2

30 Volts*

Volts*

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)

.0

MILLIMETERS

MAX

MIN.

.17

NOTES:

High dv/dt

RMS

3- A NODE

Ampere*

6 Amperes*
5 Watts*

0.01 Watt*
1

Ampere*
5 Volts*

-65C to +150C*
-65C to +125C*

2N5060

THRU
2N5064

CHARACTERISTICS
TEST

SYMBOL

Peak Reverse and Off-

Irrm

MIN.

TYP.

MAX.

UNITS

1.0

/uA

Idrm

+25C, R GK = 1000 ohms

= V DRM = Rated Value.

Tc =

Vrrm

or

State Current
(All Types)

TEST CONDITIONS

Tc = +125C, R GK = 1000 ohms

*50

V DRM = Rated Value.

+25C, V D = 7Vdc,

Vrrm
DC

Gate Trigger
Current

Igt

200

/iAdc

Tc =

RL
-

RL
DC

Gate Trigger
Voltage

Vqt

0.8

Vdc

RL
*0.1

Vjm

*1.7

Critical Rate-of-Rise

Ih

dv/dt

5.0

*10.0

20

mAdc

15

*q

V DRM

msec, wide pulse, Duty Cycle

Anode source

V//xsec

< 2%

voltage = 7Vdc,

= 1000 ohms.

T c = +25C

Tc =+25C, Rated V DRM

Rgk

Commutated
Turn-Off Time

= 7Vdc,

Tc = -65C

of Off-State Voltage
Circuit

VD

= 100 ohms.

RGK
-

-65C,

= 100 ohms.

T c = +25C, I TM = 1.2Apeak,
1

Holding Current

= 7Vdc,

T c =+125C, Rated

RL
Peak On-State Voltage

VD

+25C, V D = 7Vdc,
= 100 ohms.

Tc =

*1.2

-65C,

= 100 ohms.

Tc =

RL
-

= 100 ohms.

Tc =

*350

/usee

= 1000 ohms.

T c = +125C,

rectangular current

waveform. Rate-of-rise of current

<10A//isec. Rate reversal of current
I TM = 1A (50/isec. pulse).
Rep. Rate = 60pps. V RRM = Rated,
V RX = 15V Min., V DRM = Rated.

<5A/iisec.

Rate-of-rise of reapplied off-state

voltage = 20V/jiisec.; Gate Bias =
Volts, 100 Ohms (during turn-off

time interval).

Steady State

Rflrc

*75

R0JA
Indicates

JEDEC

C/W

Junction-to-case (flat side of case

is

temperature reference point).

Thermal Resistance

230

Registered Data.

456

Junction-to-ambient (free convection).

Silicon

Transistors

The General

Electric

2N5088 and 2N5089

are

2N5088
2N5089

NPN

Silicon

Planar Epitaxial Passivated Transistors designed

for low
low noise amplifier applications.

level,

-i~ -o3

absolute

maximum

2N5089

<b

UNITS

-A

Voltages
Collector to Emitter
Collector to Base

Emitter to Base

VCEO
VcBO
Vebo

4.5

25
30

Volts

4.5

Volts

Volts

*D

Dissipation

Total

Derating Factor
Derating Factor

< 25 C
< 25C
T A > 25 C
T c > 25C

mW

350
Pt

1.0

Watt

2.8

m\V/C

fa

mA

50

E
I.

TO-92
SYMBOL
f>

Collector

TA
Power T c

-A

ri_J

EMITTER

2.SASE

Current

Total Power

'

SEATING PLANE

30
35

_J>0

iJbLz

(t a = 25C unless otherwise specified)

2N5088

ratings:

02-

mW/C

5.3 3

40
.4

55

7
7

.4

80

2.41

I.I

8 2

5.200

4.4 5
3.1

MAX.

MIN.
4.3 2

_J

MILLIMETERS

9
2.67
4.1

50 1.395

3.4 3
12.700

f4.

3 2

L|

L2

6.3 5

2.920,

2.0 3

MIN.

MAX.

.17

.21

.0

.0

.0

.0

NOTES

2 2

1.3

75 .20 5
2 5 .16 5
.09 5
5
045 .0 5 5
.1

.1

'

.1

.13 5
.5

00
-

.2

50

2.670

.0

1.270

COLLECTOR

INCHES

.1

80

.1

70

1.3

.05

3
2

.10 5

NOTES:

Temperature

THREE LEADS
2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

1.

Operating

Tj

Storage

TsTG

-55C to +150C
-55C to +150C

Lead (1/16" 1/32" from

+230C

C
C
C

THIS SIDE.
3.CTHREE LEADS)^.b2 APPLIES BETWEEN L, AND L 2
tfb APPLIES BETWEEN L2 AND 12 .70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UN-

CONTROLLED IN L. AND BEYOND

FROM SEATING PLANE.

case for 10 sec.)

electrical characteristics:

12.

70 MM

500")

(T A - 25C unless otherwise specified)

2N5088

2N5089

SYMBOL

MIN.

MAX.

MIN.

MAX.

UNIT!

V( B R)CEO

30

25

Volts

V(BR)CBO

35

30

Volts

IcBO
ICBO

50

50

7?A

Iebo
Iebo

50

77A

100

r?A

hFE
hFE
thFE

300
350
300

Static Characteristics

Collector-Emitter

Breakdown Voltage
= 1mA, I B = 0)
Co Hector- Base Breakdown Voltage
(I c = IOOjuA, Ie = 0)
(I c

Collector Cutoff Current

(VCB = 20V, I E = 0)
(V CB = 15V,I E =0)

r/A

Emitter Cutoff Current

(V EB = 3V, I c = 0)
(V EB = 4.5V, I c = 0)
Forward Current Transfer Ratio
(I c = 100/uA, V
CE = 5V)
(I c = 1mA, V CE = 5V)
(I c = 10mA, V
CE = 5V)

50
100

900

400
450
400

.5

.5

Volts

.8

.8

Volts

1200

Collector-Emitter Saturation Voltage

(I c

= 10mA, I B = 1mA)

VCE(sat)

Base-Emitter On- Voltage

(I

= 10mA,

VCE

= 5V)

tV BE(on )

57

2N5088
2N5089
2N5089

2N5088

SYMBOL
Dynamic Characteristics
Gain Bandwidth Product
(V CE = 5 V, I c = 500/uA,

= 20 MHz)

MIN.

MAX.

50

ft

MIN.

MAX.

50

UNITS

MHz

Collector-Base Capacitance

(V CB = 5V, I E =

0, f

= 100 kHz)

Qb

4.0

4.0

pF

Ce b

10

10

pF

Emitter-Base Capacitance

(V BE = -5V, I c =

0, f

= 100 kHz)

Forward Current & Transfer Ratio

(V CE = 5V, I c = 1mA, F = 1 kHz)

350

hfe

1400

450

1800

Noise Figure

NF

(VCE = 5V, I c = IOOjuA, Rs, = 10IO2,

BW= 15.7 kHz f= 10Hz to 10kHz)

Indicates

JEDEC

fPulse Width

Registered Data.

< 300ms,

Duty Cycle

10

< 2%.

- hum
--A trH
~- YPICAL ZN5088.ZN5O8 4
1

-1

HFE
VS COLLECTOR CURRENT

LI
ft

"

I29*C

?B*C

;;

^a^

-S5"e

a
E

S
y
4
X

.a

+[

1
1

.i

IC- COLLECTOR

10

CURRENT-mA

FORWARD CURRENT TRANSFER RATIO NORMALIZED

TO .1mA VALUE VS. COLLECTOR CURRENT
458

dB

2N5088

II

2IM5089

ill

2N5088, 2N5089
TYPICAL BASE EMITTER ON
VOLTAGE CHARACTERSTICS
1.1

<A

>

19

,B.lO

,.

-55"C

^T
o

SS

=
"T?^r

*r
f3,

inn

sr

II

S?^

Met S>1

.J-*

ll

u 3 2

<
1to

S
> >*

Hi

.(XX

.C

.i

c -COLLECTOR CURRENT -mA

BASE EMITTER VOLTAGE

VOLTAGE
=

>

VS.

AND BASE EMITTER SATURATION

COLLECTOR CURRENT

t
z N6( 388

O
<

""

2N508S

TYPICAL

O
>
z

V
9=

8
6
"

^ t-

ut

B-100

2 S'C

I25'C B.IO

rte-

-5 5"C B-IO

.0Dl

.01

10

lC

10

-COLLECTOR CURRENT- mA

COLLECTOR EMITTER SATURATION VOLTAGE

VS. COLLECTOR CURRENT

2N5088, 2N5089
f -IKHz
VCE -5V0LTS
TA -2SC

<r

(9

-X'c"' O^iA

IA

sc O/iA

lC-K>C>iA

R- SOURCE RESISTANCE - K A
NOISE FIGURE VS. SOURCE RESISTANCE

459

2N5088
7

2N5089
2N5088,2

*J508 9
rs

TA -25-C

u.

00/U R,. tKr

t

"oar

"MOOKr
1

I-

FREQUENCY -Hi

NOISE FIGURE VS. FREQUENCY

10

1
1

2N SUBS, &IN9U 89
I

Imt

-IKHl

10

\
s

Tyki SAL ZNOUbtt,NO uuu

TA -25"C

*f

fIKHi

HI

X
o

*r

4 IB

?"

l.ft

<

II

h ft

5
,

p"n

a
S

X
S

"1.

--

1.3

2.5

6
I

8'

l.

2-9

mA
c -COLLECTOR CURRENT-

PARAMETERS
COLLECTOR CURRENT

1kHz HYBRID

14
10
12
<
a
VCE -COLLECTOR EMITTER

16

It

20

22

PARAMETERS
COLLECTOR CURRENT

1kHz HYBRID

VS.

460

24

VOLTME - VOLTS

VS.

26

Silicon

ISlQlSI

@ISI@

2N5172

2N6076

Transistors

The General Electric 2N5172 and 2N6076 transistors are designed

for general purpose
The planar, passivated construction assures excellent device stability
and
life. This high performance and high
value is made possible by advanced manufacturing
techniques, epoxy encapsulation and utilization of full
line beta distribution. Significant
savings may be realized by designing equipment utilizing
these "full line distribution"
applications.

type transistors.

absolute

maximum

ratings: (2 5C)

Voltages
Collector to emitter*
Emitter to base*
Collector to base*

(unless otherwise specified)

VCEO

25

Vebo

vcbo

25

Volts
Volts
Volts

Current
Collector (steady state)f *

Ic

100

mA

Dissipation

Total Power (free

air at

25 C)ft*

PT

360

mW

Temperature

ideating plane

Oi

SYMBOL

MIN.

-55 to +150
+ 125

Tstg
Tj

TL

C
C

+260

MILLIMETERS
MIN.
4.32

MAX.

170

.zee

*o t

.016

.019

lS

.208

4.19

5.21

.110

.158

2.79
2.41

3.94
2.67

1.14

1.40

to
E

098

.105

.049
.500

.055

Ot

Storage*
Operating
Lead Temperature, 1/16" 1/32" from
case for 10 seconds maximum

INCHES
MAX.

406

.7S

4SS

12.70

.075
.0*0

.115

1.90

2.03

2.92

NOTECLEAO

DIAMETER IS CONTROLLED IN THE

ZONE BETWEEN .070 AND .250 FROM THE SEATING
PLANE. BETWEEN .250 AND END OF LEAD A MAX
OF. 021 IS HELD.

fDetermined from power limitations due to saturation voltage at this

current.
tfDerate 3.6 mW/C increase in ambient temperature above 25 C.

electrical characteristics: (25C)

(unless otherwise specified)

Static Characteristics

Collector Cutoff Current

Collector Cutoff Current

Min.

(VCB = 25V),*
(VCB =25V;TA =100C)
(VCB = 25V)

Icbo
IcBO

(VEB =5V)*2N5172
(VEB = 3V)* 2N6076
Forward Current Transfer Ratio (V
CE = 10V, Ic= 10 mA)*
Collector-Emitter Breakdown Voltage (I = 10 mA)*
c
Collector Saturation Voltage (I c = 10 mA, I = 1 mA)*
B
Base Saturation Voltage
(I c = 10 mA, I B = 1 mA)
Base Emitter Voltage
(VCE = 10V, I = 10 mA)*

Iebo
Iebo

hFE$

V(BR)CEO
VCE(sat)
V BE(sat)
V BE

Max.
100
10
100
100
100

Ices

Emitter Cutoff Current

Dynamic

Typ.

100
25

nA

M
nA
nA
nA

500
.25

.80
0.5

1.2

fe

100

750

C cb

1.0

Volts
Volts
Volts
Volts

Characteristics

Forward Current Transfer Ratio (V

CE = 10V, L, = 10

f= 1kHz)*
Output Capacitance, Common Base (V
CB = 10V, IE =
f

Gain Bandwidth Product

^Typically a

(VCB = 5V,

minimum of 50% of the

=
Lj

mA
l

0,

MHz)
mA)*

= 2

distribution will have h FE

fT

> 150

at stated conditions.

Note: Polarities are absolute.

Registered Values

461

13

200

PF

MHz

Silicon

Transistors
2N51 74,5,6

The General Electric 2N5174-2N5176 are NPN silicon planar passivated transistors
designed for high voltage applications. They are especially suited for driving high voltage indicating devices. The planar, passivated construction assures excellent device
possible by
stability and life. These high performance, high value transistors are made
advanced manufacturing techniques and epoxy encapsulation.

absolute

maximum

rat mgs:(2 5 O,)

(unless otherwise specified)

2N5175, 6

2N5174

.205

Voltages

*"

100

75

Collector to Emitter

Vc,:

Emitter to Base

V.

V CRO

90

130

Collector to Base

Volts
Volts
Volts

.195

""

HBH
I: Lead diameter is controlled in the
zone between .070 and .250 tram the seating plane. Between .250 and end of lead a

NOTE

mai. of .021

is

.075

held.
I

Current
Collector (Steady State)

25

25

I<:

mA

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

TO-96

Dissipation

Total Power (free air

Total Power (free air

@ 25C)t
@ 55C)f

Temperature
Storage
Operating

55 to
55 to

Tj

Lead soldering, 1/16" to 1/32"

from case for 10 seconds max.

200
120

360
260

Pt
Pt

,UUU
lino.

mW
mW

Vf

.$00

SEATING

MIN

PLANE

,050.005
.100* .005

_.I05
.090
.140

?'/

+ 150C
+ 125*C
+260C

T,.

Determined from power limitations due to saturation voltage at this current.

fDerate 2.67 mW/C increase for temperature above 25C.
*

electrical characteristics:

C
(25 C) (unless otherwise specified)

Static Characteristics
Min.

Collector Cutoff Current (Vcb

Emitter Cutoff Current

KB

Collector to Emitter

mA, I = 1 mA)$
(I,. = 10 mA, I B = 1 mA) J
= 10 mA, V (K = 5V) J

Collector Saturation Voltage

Base Saturation Voltage

Base Emitter Voltage (I c

60V)
5V)

(I,.

Breakdown Voltage

(I c

10

.5

fiA

Iki...

100

mA

.95

Volts

Vni-;(stit)

.60

.80

Volts

Vbk

.20

.80

Volts

VcoCaO

10

mA) J

V<niocKO

(V<- B

=
=

5V, L

5V,

Ic

.1

mA)

hci:

30

2N5174
2N5175
2N5176

mA) J

10

40
100

h rK

test,

Dynamic

300

,usec,

2%

55
140

600
160
300

40
55
40

900
240
450

40

2N5174
2N5175
2N5176
JPulse

Volts
Volts
Volts

75
100
100

2N5174
2N5175
2N5176
Forward Current Transfer Ratio (Vck

Max.

In.

duty cycle.

Characteristics

Forward Current Transfer Ratio (Vck

5V,

Ic

10

mA,

= 1 kHz

hr.

2N5174
2N5175
2N5176

Output Capacitance, Common Base

(Vcb = 10V, Ie = 0, f = 1 MHz)

c,

462

pF

2N5204-07

SCR

series of silicon controlled rectifiers are reverse blocking triode

The 2N5204-07

thyristor semiconductor devices for use in medium power switching and phase
control applications requiring blocking voltage up to 1200 volts, and average load
current (single-phase, 180 conduction angle) up to 22 amperes.

General Electric's C137

level of

performance

is

SCR

is

recommended where

required for a device of this

a higher
size.

MAXIMUM ALLOWABLE RATINGS

Repetitive

Repetitive Peak
Off-State Voltage,

VllRM' 11

VDRM<1> (2)
= -40C to +125 C

= -40C

<,

Type

T,

2N5204
2N5205
2N5206
2N5207

600
800
1000
1200

Non-repetitive Peak

Peak

Reverie Voltage

Reverie Veltage

600
800
1000
1200

Voltsf
Voltsf
Voltsf
Voltsf

(1) Values apply for gate terminal open-circuited. (Negative gate bias is permissible.)
and
(2) Maximum case-to-ambient thermal resistance for which maximum

to

+125C

Vrsm" i3
= -40"C to +125C
1

'-'

TC

720
960
1200
1440

Voltsf
Voltsf
Voltsf
Voltsf

'

Voltsf
Voltsf
Voltsf
Voltsf

V RRM

ratings apply equals 5.0C per watt for full sine wave or full-wave rectified
V
sinusoidal volatge waveform. (3.0C per watt is maximum case-to-ambient thermal resistance for pure dc voltage waveform.)
(3) Half sine wave voltage pulse, io millisecond maximum duration.
capability may be temporarily lost immediately alter
(4) di/dt rating is established in accordance with EIA Standard RS-397, Section 5.2.2.6. Off-state (blocking) voltage
each current pulse for duration less than the period of the applied pulse repetition rate. The pulse repetition rate for this test is 400 Hz. The duration of the JhDEC
di/dt test condition is 5.0 seconds (minimum).

DRM

35 Amperes

RMS

On-State Current, It<r>,s>

Average On-State Current, It<.,v,
Critical Rate-of-Rise of On-State Current, di/dt: 4
Gate triggered operation
Switching from 1200 volts
1000 volts
800 volts
600 volts
Breakover voltage triggered operation
Peak One Cycle Surge (non-rep) On-State Current, Ix SM
IH (for fusing) for time = 1.0 milliseconds (See Chart 9)
for time = 8.3 milliseconds (See Chart 9)
Peak Gate Power Dissipation, P
Average Gate Power Dissipation, P<i< A v>
Peak Negative Gate Voltage, V OM
Storage Temperature, T STC
Operating Temperature, Tj
Maximum Stud Torque
<

JEDEC Type Number

conduction angles)
5)

>

(See Chart 6)
per microsecondf
per microsecondf
per microsecondf
per microsecondf
per microsecond
300 Amperesf
20 Ampere* seconds
37 5 Ampere* seconds
60 Watts for 500 microsecondsf
10 Wattsf
5 Volts t
_40 C to + 150 C

Amperes
Amperes
Amperes
100 Amperes
10 Amperes
75
80
90

flndicates data included on

(all

Depends on conduction angle (See Charts 3 and

30

Registration.

463

o
to +125Cf
-40C
"
Lb in < 35 Kg-cm)

2N5204-07
CHARACTERISTICS
Symbol

Test

Peak Off-State or

Min.

Max.

mA

Idkm

Reverse Current (D(->

Test Conditions

Unit*

Tc

-40

+125C

to

or
Ikkm

2N5204
2N5205
2N5206
2N5207

V n =

3.3f

Vhum

2.5f
2.0f
1.7f

D.C. Gate Trigger

Current
D.C. Gate Trigger
Voltage

Vgt

Peak On-State
Voltage

Vtm

Holding Current

mAdc

40

80f

Vdc

3.0
3-Of.

0.25f

2.3f

mAdc

Ih

= 12 ohms
= 12 ohms
T,. = + 25 C, V - 12 Vdc, R L = 12 ohms
T c = - 40C, V,, = 12 Vdc, R,. = 12 ohms
T = + 125C, Rated Vmm, Ri. = 1000 ohms
T<- = + 25C, Itm = 70 A peak, 1 msec wide pulse.
Buty cycle g 2%.
Anode supply = 24 Vdc, Gate supply = 10 V, 20 ohms.
Initial Forward Current Pulse = 0.5 A, 0.1 to 10.0
Tc
Tc

Volts

600 Volts Peak

800
1000
1200

=+

25 C,

12 Vdc,

R,.

-- 40C, V D = 12 Vdc,

R,.

msec. wide.

Rate of Rise
of Forward Blocking
Voltage. (Higher
Critical

dv/dt

lOOf

9j-c

Tc

100

200f
Volts/^sec

Tc

= +25C
= -40C

= + 125C,

Rated Vdum, Gate open

circuited.

values may cause

device switching.)

Thermal Resistance

1.5f

C/watt

Junction-to-case, dc

Values apply for gate terminal open-circuited. (Negative gate bias is permissible.)
case-to-ambient thermal resistance for which maximum Vdrm and Vrrm ratings apply equals 5.0 o C per watt for full sine wave or full-wave
rectified sinusoidal voltage waveform. (3.0C per watt is maximum case-to-ambient thermal resistance for pure dc voltage waveform.)
flndicates data included on JEDEC Type Number Registration.
(1)

Maximum

(2)

OUTLINE DRAWING
NOTES:

(COMPLIES WITH JEDEC TO-48)

1.

Complete threads to extend

within 2Vx threads of seating
plane. Diameter of unthreaded
portion. 249" (6.32MM) Maximum, .220" (5.59MM) Mini-

2.

Angular orientation of these

mum.
terminals
3.

is

V4-28 UNF-2A. Maximum pitch

diameter of plated threads

SEE NOTES

3,4 as

be basic pitch diameter

.2268" (5.76MM), minimum

shall

pitch

diameter

.2225"

(5.66MM),
reference:
screw
thread standards for Federal
Service 1957, Handbook H28,

I
5.
6.

MIN. MAX.

A
0b

.330

.505

8.38

12.83

.115

.140

2.92

3.56

<t>b,

.210

.300

5.33

7.62

0D

F,

.544

chamfer (or undercut) on

one or both ends of hexagonal portions is optional.
Case is anode connection.
Large terminal is cathode con-

.562

13.82

14.27

.113

.200

2.87

5.08

.060

J,
1

is

gate connec-

a 7

1.193

30.30

.875

22.23

.120

3.05
1

.422

.453

10.72

Insulating kit available

request.
A. 1/4-28 steel
B.

nut,

Ni.

upon

0t

.060

.075

1.52

1.91

.125

.165

3.18

4.19

plated,

.178 min. thk.

Ext. tooth lockwasher,
steel, Ni. plated, .023 min.
thk.

464

11.51

<t>h

tion.
8.

1.52

0M
SEE NOTES

Small terminal

13.82

.544

nection.
7.

MILLIMETERS

r-

1957, PI.
4.

INCHES
MIN. MAX.

SYMBOL

undefined.

2N5204-07

JUNC TION TEMPERATl RE =

>5'C

/
/
1

-25 C

Z5"C-

J
1

INSTANTANEOUS ON -STATE VOLTAGE

1.

MAXIMUM ON-STATE

VOLTS

12

16

20

24

AVERAGE ON -STATE CURRENT-

CHARACTERISTICS

2.

MAXIMUM ON-STATE POWER

DISSIPATION FOR

HALF-WAVE RECTIFIED SINE WAVE OF CURRENT

NOTES
L RESISTIVE OR INDUCTIVE LOAD, 50 TO 400Hz.
2. CURVES APPLY FOR ANODE CURRENT RATE C F RISE
3.

10 AMPERES PER MICROSECOND MAXIML

RATINGS DERIVED FOR 1.0 WATT AVERAGE G ATE

POWER

^100

a:
tu

DISSIPATION.

TO AMBIENT

<

80

CL

S 70
to

<

60

INDUCTION
ANGLE =30

9o\.

60'

12oN

CD

% 40
o
_j

< 30

2
0"

18rf

"
C

ONI u ct^ -^
A LE
_J
12

16

20

AVERAGE ON -STATE CURRENT

3.

24

AVERAGE ON-STATE CURRENT AMPERES

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

HALF-WAVE RECTIFIED SINE WAVE OF CURRENT

465

4.

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

2N5204-07
M

1000

'

~1
120
.

NOTES
FREQUENCY *SOTO 400Hz. T
CURVES APPLY FOR ANODE CURRENT RATE OF

UJ

+ I25-C
REQUIRED GATE DRIVE:10 VOLTS,

SECONDS PULSE WIOTH MINIMUM,

MAXIMUM.

CASE-TO-AMBIENT.

4 INSTANTANEOUS VALUE OF ON -

EXCEED TURN-ON CURRENT

UMIT LINES SHOWN.

ao
0.

3
70

60

5 60

uj

40

<

DUTY CYCLE

8.3%

16.7

'A

a 30
3
3

40

<

APPLIED PULSE REPETITION

RATE FOR THIS TESTIS400H*

THE DURATION OF THE JEDEC.
di/dl TEST CONDITION IS 5.0
SECONDS MINIMUM.

- AMPERES

^O
2
4
6
8 10
06 OS 1.0
FROM START OF CURRENT FLOW - MICROSECONDS

TIME

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

RECTANGULAR CURRENT WAVEFORM

5.

LOST AFTER EACH CURRENT

PULSE FOR DURATIONS LESS

04
AVERAGE ON-STATE CURRENT

IN

MAY BE TEMPORARILY

ILlTY

#
<?/

3
3
<

100)

(t)

ESTABLISHED

10

IS

*
,

-,*

^y\/

50%^

5% 33W

dl/dt RATING

ACCORDANCE WITH JEDEC

* 8U

A so
_l

5.

<

NOTES

DISSIPATION.

4 5" C PER WATT MAXIMUM THERMAL RESISTANCE,

3.

RATINGS DERIVED FOR LO WATT AVERAGE GATE

POWER

II

UJ

MO
S.

>^

TURN-ON CURRENT

6.

LIMIT

(l)CURVE DEFINES TEMPERATURE RISE OF

JUNCTION ABOVE CASE TEMP FOR SINGLE
LOAD PULSE OF DURATION t. PEAK ALLOWABLE DISSIPATION IN THYRISTOR.FOR TIME t,
STARTING FROM CASE TEMP., EQUALS 125 "C
(MAX. Tc MINUS CASE TEMP. DIVIDED BY THE
TRANSIENT THERMAL IMPEDANCE)

l25C-Tc

0.04

PEAK
(2)

"

j- c

(t)

FOR OPTIMUM RATINGS AND FURTHER INFORMATION SEE PUB.

200.9 ENTITLED "POWER SEMICONDUCTOR RATINGS UNDER

&

TRANSIENT AND INTE RMITTENT LOADS".

,

0.001

0.004

0.01

04

4.0

0.1

TIME (t)

10

40

100

-SECONDS

300

MAXIMUM TRANSIENT THERMAL IMPEDANCE,

7.

250

FOR HALF SINE WAVE

OF CURRENT

JUNCTION-TO-CASE

500
200

NOTES:
.

(A

ui

O UJ
>

150

300

n-

<s

*<

UJ

100

NO TE
JUNCT ON TE MPE RA1rUF E M M E DIATELY
PRIO R

TOS URGE

-4(

250

THIS OVERLOAD MAY

BE APPLIED FOLLOWING

DEVICE OPERATION AT ANY

VOLTAGE OR CURRENT WITHIN ITS
STEADY STATE RATING LIMITS.
THE OVERLOAD MAY NOT BE REPEATED UNTIL
DEVICE JUNCTION TEMPERATURE HAS COOLED
DOWN TO WITHIN STEADY-STATE RATED VALUE
NO BLOCKING VOLTAGE RATING IS IMPLIED DURING
OR IMMEDIATELY FOLLOWING THE OVERLOAD
CURRENT INTERVAL.
JUNCTION TEMPERATURE IMMEDIATELY PRIOR TO
0VERL0AD-40 TO + I25C.
.

ro H-I25"C

III- J_
8

10

20

40

1.5

MAXIMUM ALLOWABLE SURGE

2.5

(NON-REPETITIVE)

9.

PULSE BASE WIDTH

CYCLES AT 60 Hz

MAXIMUM ALLOWABLE

J L
8 9 10

MILLISECONDS

SUB-CYCLE SURGE

(NON-REPETITIVE) ON-STATE CURRENT

ON-STATE CURRENT

AND
466

l-T

RATING

Silicon

Transistor
2N5219
The General

Electric

2N5219

is

Silicon

NPN

taxial Passivated Transistor designed for general purpose

lifier

Planar Epi-

amp-

applications.

absolute

-j

V
p*b2 f*b

L, |_ s

maximum

ratings: (TA = 25C unless otherwise specified)

Voltages
Collector to Emitter
Collector to Base

Emitter to Base

15

Vcbo
VEBO

20
3

Volts
SYMBOL

Volts
A

Volts

Current
Collector

25C
Derating Factor TA > 25C
Total Power T c < 25C
Derating Factor T c > 25C

4.3 2

f>b

.4

.5

.4

.4

*D

4.4 5

.1

90

3.180

4.1

2.41

2.670

PT
PT
PT
PT

350

mW

2.8

mW/C

L|

L2

6.3 5

Watt

2.920

2.0 3

mW/C

5.2

mA

8.0

.0

100

1.0

.0

I.I

50 1.395
4.32

3.4 3

12.700

Ji

BASE

3.

COLLECTOR

MIN.

8 2

Z5L

2.

.17

AD

EMITTER

INCHES

5.3 3

fa

<M

<

MILLIMETERS
MIN.
MAX.

Ic

Dissipation

TA

I.

TO-92

VCEO

- ?2 -

L2 l

SEATING PLANE

Total Power

-03
e

MAX.
10

NOTES

.2

6 .0??
.01 9

1.3

75 .205

.12 5 .16 5
.09 5 .105
.0 4 5 .0 5 5
.13 5 .170
.5

1.270

.2

.1

00
50
1

2.670 .080

.05

1,3

3
3
2

.10 5

NOTES:
1.

Temperature

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

+150
+150
+230

Tj

-55 to

Storage

Tstg

55 to

Lead (1/16" 1/32" from

case for 10 sec.)

TL

Operating

THIS SIDE.

C
c
c

3.

(THREE LEADS) ^b2 APPLIES BETWEEN L ANDL2.

(

<b APPLIES BETWEEN L2 AND 12.70 MM (.500")

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L, AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

*electrical characteristics: (TA = 25C unless otherwise specified)

Static Characteristics

Breakdown Voltage
= 1.0 mA, I B =0)
Collector-Base Breakdown Voltage
(I c = 100 nA, I E = 0)
Emitter-Base Breakdown Voltage
(I E = 100 M, Ic = 0)

SYMBOL

MIN.

MAX.

UNITS

V( B R)cEO

15

Volts

V(BR)CBO

20

Volts

V( B R)EBO

3.0

Volts

ICBO

100

nA

Iebo

500

nA

hFE

35

500

Vc E (sat)

0.4

Volts

VBE(sat)

1.0

Volts

150

MHz

Ccb

4.0

hf e

35

1500

Collector-Emitter
(I c

Collector Cutoff Current

(VCB = 10V, I E = 0)
Emitter Cutoff Current
(VBE = 2.0V, I c = 0)

DC

Current Gain

(I c

= 2.0 mA,

VCE

= 10V)

Collector-Emitter Saturation Voltage

(I c

= 10 mA,

IB

= 1.0 mA)

Base-Emitter Saturation Voltage

(I c

= 10 mA, I B = 1.0 mA)

Dynamic

Characteristics

Current -Gain Bandwidth Product

(I c = 10 mA, VCE = 10V, f = 20

MHz)

fT

Collector-Base Capacitance

(VCB = 10V, I E =

0, f

= 1.0 MHz)

Small Signal Current Gain

(I c

= 2.0 mA,

"Indicates

JEDEC

VCE

= 10V,

= 1.0 kHz)

Registered Data.

467

pF

Silicon

Transistor

2N5220
The General

2N5220

Electric

is

NPN

Silicon

taxial Passivated Transistor designed for general

Planar Epi-

purpose audio

amplifier applications.

absolute

maximum

ratings: (TA = 25C unless otherwise specified)

Voltages

EMITTER

Collector to Emitter
Collector to Base

Vceo
Vcbo

Emitter to Base

VEBO

15

Volts

15

Volts

SYMBOL

Volts

.3

TO-92

Current
Collector

500

In

mA

Dissipation

Total Power

TA

<

PT
PT
PT
PT

25C
Derating Factor TA > 25C
Total Power T c < 25C
Derating Factor T c > 25C

4.3 2

f>b

.4

.5

.4

.4

<t>D

4.4 5

mW

2.8

mW/C

3.1

2.41
I.I

12.700

Li

Watt

8.0

mW/C

Temperature

520
4.1 9
2.67

50 1.395

3.4 3

1.0

80

5
8 2

L2
Q

2.920

2.0 3

6.3 5

4.32

MIN.

MAX.
10

.0

.1

NOTES

.2

6
6

22
9
.20 5
.12 5 .16 5
.09 5
5
.0 4 5 .055
.13 5 .170
.0

.0

.01

1.3

75

.1

.5

COLLECTOR

.17

1.270

BASE

3.

INCHES

5.3 3

ibz

ei

350

MILLIMETERS
MIN.
MAX.

2.

.2
.1

00
50
1

2.670 .080

.05

1,3

3
3
2

.10 5

NOTES:
1.

Operating

Tj

Storage

Tstg

Lead (1/16" 1/32" from

+150 C
-55 to +150 c
+230
c
-55 to

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3.(THREE LEADS)<*>b2 APPLIES BETWEEN L| AND L 2
tfb APPLIES BETWEEN L2 AND 12.70 MM (.500")
.

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.

case for 10 sec.)

*electrical characteristics: (TA = 25C unless otherwise specified)

Static Characteristics

Collector-Emitter
(I c

SYMBOL

MIN.

MAX.

UNITS

tV( BR ) CEO

15

Volts

V(BR)CBO

15

Volts

V(BR)EBO

3.0

Volts

ICBO

100

nA

Iebo

100

nA

Breakdown Voltage

= 10 mA, I B =0)
Breakdown Voltage

Collector-Base
(Ic

= 100/iA,

IE

= 0)

Emitter-Base Breakdown Voltage

(I E

= IOOjzA,

c = 0)

Collector Cutoff Current

(Vcb = 10V, I E = 0)
Emitter Cutoff Current

(VBE = 3.0V, I c =

0)

DC

Current Gain
(I c = 10 mA, VCE = 10V)
(I c

= 50 mA,

V CE

th FE
th FE

= 10V)

25

30

600

0.5

Volts

1.1

Volts

Collector-Emitter Saturation Voltage

(I c = 150 mA, I
B = 15 mA)
Base-Emitter Saturation Voltage
(I c

= 150 mA,

Dynamic

IB

= 15

tVcE(sat)

mA)

tVBE ( sat

Characteristics

Current-Gain Bandwidth Product

(I c

= 20 mA,

VCE

= 10V, f = 20 MHz)

MHz

100

Collector-Base Capacitance

(VCB = 5.0V, I E =

0, f

1.0

MHz)

10

cb

Small Signal Current Gain

(I c

= 50 mA,

VCE

= 10V, f = 1.0 kHz)

fe

fPulse Test: Pulse width = 300 us, duty cycle = 2%.

30

1800
indicates

468

JEDEC

Registered Data.

Silicon

Transistor

The General

Electric

2N5221

a Silicon

is

PNP Planar

Epitaxial

Passivated Transistor designed for general purpose amplifier

applications.

PNP Polarities

JE=>

are Negative: Observe Proper Bias.

maximum

*Q-4 2

ratings: (TA = 25C unless otherwise specified)

Vceo
Vcbo
Vebo

Collector to Base

Emitter to Base

Volts

15

Volts

SYMBOL

Volts

500

Ic

MILLIMETERS
MIN.
MAX.
4.3 2

f>b

.4

fa

.4

*D

mA

Dissipation

TA

<

Derating Factor

TA

Tc

<

Total Power

25C
25 C

> 25 C

Tc

Derating Factor

PT
PT
PT
PT

> 25 C

350

mW

2.8

mW/C

1.0

Watt

8.0

7
7

80

3.1

2.41
I.I

.4

L|

LZ

mW/C

.0

8 2

.0

2.0 3

3.

COLLECTOR

.2

10

.0

22

9
75 .205
1

.1

.01

NOTES
1.3

.12 5 .16 5
.09 5
5
.0 4 5 .0 5 5
.13 5 .170
.1

4.32

.5

1.270

6.3 5

4.1 9
2.67

00
-

.2

2.92

BASE

MIN. MAX.

5.2

12.700

2.

.17

50 1.395

3.4 3

.5

EMITTER

INCHES

5.3 3

4.4 5

<M

Total Power

-E-H
I.

TO-92

15

Current
Collector

-I

-I
L
SEATING PLANE

Voltages
Collector to Emitter

L_SL^b2vL*b

L,

"T
AD

Ji

E;

absolute

-03

- ?2 -

50

.1

2.670 .080

.05

1,3

3
3
2

.10 5

NOTES
THREE LEADS
2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

Temperature

1.

Operating

Tj

Storage

T stg
TL

Lead (1/16" 1/32" from

+150 C
-55 to +150 c
+230
c
-55 to

THIS SIDE.
3.

(THREE LEADS) ib2 APPLIES BETWEEN L, AND L2

ib APPLIES BETWEEN L2 AND I2.70MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L, AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.
.

case for 10 sec.)

*electrical characteristics: (TA = 25C unless otherwise specified)

SYMBOL

Static Characteristics

(I c

= 10 mA,

MIN.

MAX.

UNITS

tV( B R)CEO

15

Volts

V(BR)CBO

15

Volts

V( B R)EBO

3.0

Volts

ICBO

100

nA

Iebo

100

nA

th FE
th FE

25
30

600

tVCE ( sat )

0.5

Volts

tVBE

1.1

Volts

100

MHz

Ccb

15

PF

hfe

30

1800

Breakdown Voltage

Collector-Emitter
I

B = 0)

Breakdown Voltage
(I c = 100/xA, Ie = 0)
Emitter-Base Breakdown Voltage
(I E = 100 m A, I c = 0)

Collector-Base

Collector Cutoff Current

(Vcb = 10V, I E = 0)
Emitter Cutoff Current

(VBE = 3.0V,

DC

Ic = 0)

Current Gain

VCE

(I c

= 10 mA,

(Ic

=50mA, VCE

= 10V)
= 10V)

Collector-Emitter Saturation Voltage

(I c

= 150

mA, I B =

15

mA)

Base-Emitter Saturation Voltage

(I c

Dynamic

150mA,

IB

15mA)

( sat )

Characteristics

Current -Gain Bandwidth Product

(I c

= 20 mA,

VCE

= 10V,

= 20 MHz)

fT

Collector-Base Capacitance

(VCB = 5.0V, I E =

0, f

1.0

MHz)

Small Signal Current Gain

(I c = 50 mA,
CE = 10V, f = 1.0 kHz)

fPulse Test: Pulse width = 300

jus,

duty cycle = 2%.

Indicates

469

JEDEC

Registered Data.

Silicon

Transistor

2N5223
The General

2N5223

Electric

is

a Silicon

NPN

taxial Passivated Transistor designed for general

lifier

purpose amp-

applications.

absolute

maximum

ratings: (T A = 25

VcEO
VcBO
Vebo

Emitter to Base

20
25

Volts
Volts

SYMBOL

Volts

3.

*b
4b2

Current
Collector

100

Ic

*D

mA

E
e
c1

Dissipation

Total Power

TA

<

PT
PT
PT
PT

25C
> 25C
Total Power T c < 25C
Derating Factor T c > 25C
Derating Factor

TA

350

mW

2.8

mW/

1.0

8.0

L
L|

L2

Watt

mW/

1.

Operating

Tj

Storage

Lead (1/16" 1/32" from

case for

EMITTER
BASE
COLLECTOR

INCHES

NOTES

MAX.
10
7
.4
.5 5
.0
6 .0 2 2
.4
7
.4 8 2 .0
6 .01 9
4.4 5
5.2
75 .205
3.
80 4.1 90 .12 5 .16 5
2.4I
2.67
.09 5
5
5.3 3

MIN.

.17

.2

1.3

.1

.1

I.I

50 1.395

3.4 3

12.700

6.350
2.920
2.0 3

4.3 2

4 5 .055
.13 5 .170

.0

.500

1.270

.2
.1

50
1

1.3

.05

2.670 .080

3
2

.10 5

stg

TL

C
55 to +150 C
+230
c

THIS SIDE.
3.(THREE LEADS) b2 APPLIES BETWEEN L| AND L 2
ib APPLIES BETWEEN L 2 AND 12.70 MM (.500")
.

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500
FROM SEATING PLANE.

sec.)

specified)

SYMBOL

MIN.

V (BR)CEO

20

Volts

(BR)CBO

25

Volts

(BR)EBO

3.0

Volts

Static Characteristics

MAX.

UNITS

Breakdown Voltage

Collector-Emitter

mA,

Collector-Base

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

55 to +150

electrical characteristics: (TA = 25C unless otherwise

1.0

MILLIMETERS
MAX.

MIN.
4.3 2

B = 0)

Breakdown Voltage

= 100/iA, I e = 0)

Emitter-Base Breakdown Voltage

(I E

= 100 mA, Ic = 0)

Collector Cutoff Current

(VCB = 10V, I E = 0)
Emitter Cutoff Current
(VBE = 3.0V, I c = 0)

DC

CBO

100

nA

EBO

500

nA

Current Gain

(I c

VCE

= 2.0 mA,

= 10V)

FE

50

800

Collector-Emitter Saturation Voltage

(I c

= 10 mA, I B =

1.0

mA)

CE(sat)

0.7

Volts

BE(sat)

1.2

Volts

Base-Emitter Saturation Voltage

(I c

= 10mA,

Dynamic

B =

1.0mA)

Characteristics

Current-Gain Bandwidth Product

(I c

VCE

= 10 mA,

= 10V,

= 20 MHz)

fT

MHz

150

Collector-Base Capacitance

(VCB = 10V, I E =

0, f

= 1.0 MHz)

4.0

cb

Small Signal Current Gain

(I c

= 2.0 mA,

Indicates

J]

NOTES:

Temperature

(Ic

I.

2.

Collector to Base

"T

-I

SEATING PLANE

Collector to Emitter

|_\L*b2vL*b

L,

~Q LZ -A

unless ot herwise

Voltages

(I c

-Ie-^- -? 2
pi

Planar Epi-

JEDEC

VCE

= 10V, f = 1.0 kHz)

fe

Registered Data.

470

50

1600

pF

Silicon

Transistor

The General

Electric

2N5225

is

a Silicon

NPN

taxial Passivated Transistor designed for general

lifier

2N5225

Planar Epi-

applications.

absolute

1.5-

purpose amp-

_AD

-4*>

maximum

ratings: (TA = 25C unless otherwise specified)

r-Qa-

-4

-L2-|

SEATING PLANE 3. COLLECTOR

Voltages
Collector to Emitter
Collector to Base

Vceo
Vcbo

Emitter to Base

VEBO

25

Volts

25
4

Volts

SYMBOL

Volts

fb

Collector

200

Ic

mA

< 25C
> 25C
Total Power T c < 25C
Derating Factor T c > 25C
TA

Derating Factor

PT
PT
PT
PT

TA

350

mW

2.8

mW/C

1.0

8.0

L|

mW/C

NOTES
1.3

.1

Watt

MIN.

.17

.1

e
e1

Total Power

5.3 3

4,0

Dissipation

MAX.

MAX.
.210
40 7 .5 5 .0 6 .022
.4
7
.4 8 2 .0
6 .01 9
4.4 5
5200 75 .205
3.1 80 4.1 90 .12 5 .16 5
2.41
2.67
.09 5
5
I.I
50 1.395 .045 .055
3.430 4.32
.13 5 .170

12.700
.500
MIN.
4.3 2

*b2

Current

Z.BASE
I. EMITTER
INCHES

TO- 92
MILLIMETERS

50

L2

6.3

2.92
2.0 3

1.270

- .05

.2 50
.1

2.670 .080

1,3

3
3
2

.10 5

NOTES:

Temperature

1.

Operating

Tj

Storage

Tstg

Lead (1/16" + 1/32" from

TL

THREE LEADS

2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

+150 C
-55 to +150 c
260
c
-55 to

THIS SIDE.
3.

(THREE LEADS) ^bz APPLI ES BETWEEN L AND L 2

t

0b APPLIES BETWEEN L2 AND 12.70 MM (.500")

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

case for 10 sec.)

electrical characteristics: (TA = 25C unless otherwise specified)

= 10

mA,

MAX.

UNITS

tV(B R)CEO

25

Volts

V( B R)CBO

25

Volts

V( B R)EBO

4.0

Volts

ICBO

300

nA

Iebo

500

nA

Breakdown Voltage

Collector-Emitter
(I c

MIN.

SYMBOL

Static Characteristics

=0)

Breakdown Voltage
= 100/iA,I E = 0)
Emitter-Base Breakdown Voltage
(I E = 100 uA, I c = 0)

Collector-Base
(I c

Collector Cutoff Current

(VCB = 15V, I E = 0)
Emitter Cutoff Current

(VBE = 4.0V, I c = 0)

DC

Current Gain

(I c

(Ic

= 10 mA, VCE = 10V)

= 50mA,VCE = 10V)

th F E
th FE

25

30

600

tVC E(sat)

0.8

Volts

tVBE(sat)

1.0

Volts

50

MHz

20

PF

Collector-Emitter Saturation Voltage

(I c

= 100 mA, I B = 10 mA)

Base-Emitter Saturation Voltage

= 100 mA, I B = 10 mA)

Dynamic Characteristics
Current -Gain Bandwidth Product
(I c = 20 mA, VCE = 10V, f = 20 MHz)
(I c

fT

Collector-Base Capacitance

(VCB = 5.0V, I E =

0, f

= 1.0 MHz)

Ccb

Small Signal Current Gain

(I c

= 50 mA,

VCE

= 10V,

= 1.0 kHz)

hfe

1800

30
"Indicates

= 300jus, duty cycle = 2%.

f Pulse Test: Pulse width

471

JEDEC

Registered Data.

Silicon

Transistor

The General

2N5226

Electric

is

a Silicon

PNP

2N5226

Planar Epitaxial

Passivated Transistor designed for general purpose amplifier

applications.

absolute

PNP Polarities

maximum

are Negative: Observe Proper Bias.

ratings: (TA = 25C unless otherwise specified)

-Q

Voltages

J
.EMITTER
BASE
3. COLLECTOR

SEATING PLANE

2.

Collector to Emitter

Vceo
Vcbo
Vebo

Collector to Base

Emitter to Base

25

Volts

25

Volts

Volts

TO-92

Collector

500

Ic

mA

Total Power

<

PT

350

mW

2.8

MW/C

Tc

PT
PT
PT

TA

25C
Derating Factor TA > 25C
Total Power T c > 25C
Derating Factor

> 25 C

2.4

L2

8.0

mW/C

.5 5

.0
.0

5.

.1

50

1.

395

270

6.3 5

2.920
2.0 3

1.

NOTES

6
6

.0
.0

2 2
1

1.3

75 .205

.09 5

.1

.045 055

4.32

12.700

MAX.
10

.2

.125 .16 5

2.67

I.I

L|

Watt

3.4 3

1.0

.13 5 .170
.5

2.670

00

1,3

- .05

.2 50
J
.0

80

3
3

.10 5

NOTES:
1.

Operating

Tj

55 to +150

Storage

Tstg
TL

55 to +150

Lead (1/16" 1/32" from

case for 10 sec.)

+230

THIS SIDE.
3.

mA,

Collector-Base

(THREE LEADS) b2 APPLIES BETWEEN L( AND L 2

<j>b APPLIES BETWEEN L2 AND 12.70 MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.
.

*electrical characteristics: (TA = 25

Collector-Emitter

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

C
C

unless otherwise specified)

Static Characteristics

(I c

3.

Temperature

= 10

E
e1

.17

48 2
20
80 4. 90

.4

4.4 5

t-D

Dissipation

7
7

.4

$bz

INCHES
MIN.

5.3 3

4.3 2

f>b

Current

(I c

MILLIMETERS
MIN.
MAX.

SYMBOL

SYMBOL

MIN.

MAX.

UNITS

Breakdown Voltage

IB

= 0)

tV(RR)cEO

25

Volts

V(BR)CBO

25

Volts

V(BR)EBO

4.0

Volts

Breakdown Voltage

= 100 m A,

E = 0)

Emitter-Base Breakdown Voltage

(I E

=-100/iA,

c = 0)

Collector Cutoff Current

(VCB = 15V, I E =0)

Emitter Cutoff Current
(VBE = 4.0V, I c = 0)

IcBO

300

nA

Iebo

500

nA

DC

Current Gain
(I c = 10 mA, V
CE = 10V)

(I c

= 50 mA,

VCE

th FE
th FE

= 10V)

25
30

600

Collector-Emitter Saturation Voltage

(I c

= 100

mA, I B =

10

mA)

TV,CE(sat)

0.8

Volts

tvBE(!sat)

1.0

Volts

Base-Emitter Saturation Voltage

(I c

= 100

Dynamic

mA,

IB

= 10

mA)

Characteristics

Current-Gain Bandwidth Product

(I c

= 20

mA,

VCE

= 10V,

= 20

MHz)

MHz

50

Collector-Base Capacitance

(VCB = 5.0V, I E =

0, f

= 1.0 MHz)

Cct

Small Signal Current Gain

(I c = 50 mA, VCE = 10V, f = 1.0 kHz)

Hfe

fPuIse Test: Pulse width = 300 ms, duty cycle = 2%.

20

30

1800
Indicates

472

PF

JEDEC Re 'istered

Data.

Silicon

Transistor

The General Electric 2N5227

is

a Silicon

PNP Planar

Epitaxial

Passivated Transistor designed for general purpose amplifier

applications.

absolute

PNP Polarities

maximum

are Negative: Observe Proper Bias.

ratings: (TA = 25

unless ot lerwise

Voltages

2.

Collector to Emitter

VcEO

Collector to Base

VCBO

30
30

Vebo

Emitter to Base

TO-92

Volts
Volts

SYMBOL

Volts

Current
Collector

50

Ic

mA

Dissipation

Total Power

TA

<

25

Ta > 25C
Total Power T c < 25C
Derating Factor Tc > 25
Derating Factor

MILLIMETERS
MAX.

MIN.
4.3 2

fb

.4
.4

4.4 5

5.2

3.180

4.1

2.41

2.67

e1

I.I

7
7

350

mW

PT

2.8

mW/

Watt

L2

6.3 5

2.920

2.0 3

1.0

Pt
Pt

8.0

mW/

.4

5
8 2

MIN.

MAX.

.17

.21

.0

3.4 3

12.700

.0

22

9
75 .205
.125 .16 5

.0

.0

NOTES
1.3

.1

90

.09 5

50 1.395 .045

Pt

.5

EMITTER
BASE
COLLECTOR

INCHES

5.3 3

*t>2

3.

4.32

.1

.0

5
55

.13 5 .170

.5

1.270

.2

2.670

.0

00
- .050

.1

50
1

80

1,3

3
3
2

.10 5

NOTES'-

Temperature

1.

+150
55 to +150
+230

-55 to

Operating

Tj

Storage

Tstg

Lead (1/16" 1/32" from

TL

THREE LEADS

2.C0NTOUR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3 (THREE LEADS)^.b2 APPLIES BETWEEN L| AND L 2
$b APPLIES BETWEEN L2 AND 12.70 MM (.500")

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

"C

case for 10 sec.)

*electrical characteristics: (TA = 25 C unless otherwise specified)

Static Characteristics

SYMBOL

MIN.

MAX.

V(BR)CEO

30

Volts

V(br)cbo

30

Volts

V(BR)EB o

3.0

Volts

100

nA

500

nA

Collector-Emitter Breakdown Voltage

mA,

= 0)
Collector-Base Breakdown Voltage
(I c = 100M, Ie = 0)
(I c

= 1.0

IB

Emitter-Base Breakdown Voltage

(I E

= 100/iA, I c = 0)

Collector Cutoff Current

(VCB = 10V, I E = 0)

iCBO

Emitter Cutoff Current

(VBE = 2.0V, Ic = 0)

DC

EBO

UNITS

Current Gain

(I c
(I c

= 100 mA, Vce = 10V)

= 2.0 mA, VCE = 10V)

h FE
h FE

30
50

700

VCE(sat)

0.4

Volts

VBE(sat)

1.0

Volts

100

MHz

C cb

5.0

h fe

50

1500

Collector-Emitter Saturation Voltage

(I c = 10 mA, I B = 1.0 mA)
Base-Emitter Saturation Voltage
(I c

= 10 mA, I B = 1.0 mA)

Dynamic

Characteristics

Current-Gain Bandwidth Product

= 10V, f = 20
(I c = 10 mA, VCE

MHz)

fT

Collector-Base Capacitance

(VCB = 10V, I E =

0, f

1.0

MHz)

Small Signal Current Gain

(I c = 2.0 mA, VCE = 10V, f = 1.0 kHz)
"Indicates

JEDEC

Registered Data.

473

pF

Silicon

Transistors

The General Electric 2N5232 and 2N5232A are

silicon, planar, epitaxial,
passivated transistors designed especially for low noise preamplifier and small
signal industrial amplifier applications. The units feature low collector saturation voltage, tight beta control and excellent low noise characteristics. The
2N5232A includes a noise figure specification.

NPN

absolute

maximum

ratings:

(25C)

(unless otherwise specified)

Voltages
Collector to Emitter

V CEO

Emitter to Base
Collector to Base

50

V EBO

VcBO

Current
Collector (Steady State)*

70

100

Ic

Dissipation

Total Power (Free Air at 25 C) t

Pt

T sl8

Between .250 and end of lead a

max. of .021

is

held.

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

% 2 " from case

maximum

T,

+125C

T,.

+260C

electrical characteristics:

(25C)

mW

LEADS

Typ.

-.001
II

Max.

IcBO

30
10

Ices

30

Iebo

50

IcBO

iIfe

(Voe = 5V, Ic = 100 M A)

Collector Emitter Breakdown Voltage (I =
c
10 mA)
Collector Base Breakdown Voltage (I c = 10 /j.A)
Emitter Base Breakdown Voltage (I E = 10 /tA)
10

>02

(NOTE

Min.

Vcb = 50V)
(Vcb = 50V,T a = 100 C)
Collector Cutoff Current (Vcb 50V)
Emitter Cutoff Current (Veb = 5V)
Forward Current Transfer Ratio ( Vce = 5V, I = 2 mA)

PLANE

(unless otherwise specified)

250

IIfE

V (BR)CEOlf
V (BK)CBO
V(BR)EBO

nA
/iA

nA
nA

500

170J
50
70

Volts

Volts

Volts

I B = 1 mA)
= 1 mA)

VcE(sat>TI

.125

Volts

VBEesat>|[

.78

Volts

mA)

Vbe

mA,

Base Saturation Voltage (I c = 10 mA, I B

Base Emitter Voltage ( CE = 10V, Ic = 2

SEATING

M|N

this current

Static Characteristics

Collector Saturation Voltage (I c

.500

TO-98

-55to+150C

'Determined from power limitations due to saturation voltages at

tDerate 3.6 mW/'C increase in ambient temperature above 25C.

Dynamic

ing plane.

7
""

Lead Soldering, Me"

Collector Cutoff Current

mA

NOTE 1: Lead diameter is controlled in the

zone between .070 and .250 from the seat-

Temperature
Storage
Operating
for 10 seconds

360

V
V
V

0.5

0.9

250

750

Volts

Characteristics

Forward Current Transfer Ratio ( CE = 5V, I c = 2 mA, f = 1 kHz)

Output Capacitance, Common Base (Vcb = 10V, I E = 0, f = 1 MHz)
Noise Figure (I c = 100 /*A, V CE = 5V, R g = 5 kn, f = 1 kHz,

BW = 15.7 kHz)

(2N5232A

only)

h, e

C cb

4.0

pP

NF

dB

JTypically, a minimum of 95% of the distribution is above this value.

IfPulse conditions: 300 Msec, duration, 2% duty cycle.

474

h FE vs.

Ambient Temperature

2N5232,

VCE .5.0V,I C

Input

and Output Capacitance

vs. Bias

IOriA

Voltage

10

V EB -VOLTAGE EMITTER TO BASE-V

_5

1.5

Ul

f1MHz

_i

"-

111

______ebo

^\

8
io

a.

Ccbo
14

o
z
?
o
2

<
u

>
o

CM

10

Q
uJ

Z
o
ui

0j

Q
16

3
o

18

5
10
IS
Vce -VOLTAGE COLLECTOR TO

20
25

20

BASE-V

-50

-30

Forward Current Transfer Ratio

cbo vs.

90

-10
10
50
70
30
TA - AMBIENT TEMPERATURE-'C

110

vs. Collector

Current

Ambient Temperature
700

vcb" 8 V
*KX>

10

I
0.1

-C0LLECT0R CURRENT-mA

Normalized h Parameters
9.0

8.0
7.0
6.0

100
60
80
40
TA-AMBIENT TEMPERATURE-'C

20

120

\
s

100

10

Ic

vs.

-vCE .iov

TA -25* c
\!>i.

f -

kH z

5.0

NtvJl

o
o
UJ
N
J
<
2
IE
O
*

Nje /

2.5

2.0

1.5

i.

*Ve
1.0

^\~^

0.9

"2?
oc 0.7

hfe

^t.

"^^I^B

0.6
Si

0.5
h 0

0.3

.25
0.2

r
TYPICAL SMALL SIGNAL CHARACTERISTICS
UNITS
SYW BOL CHARACTERISTIC
4900 OHM S
hj
INPUT RESISTANCE
20.U0HH IS
OUTPUT CONDUCTANCE
hot

hf,

FORWARD CURRENT
TRANSFER RATIO

420
5

>nl

0.1
.15

02.

03

0-4 0.5

07

0.6

0.9
0.8 1.0

I, COLLECTOR

475

1.5

3.0

3X) 4.0

50

70

6.0

CURRENT-mA

9X>

SO

IO

Silicon

Transistors
2N5249.A

NPN

The General Electric 2N5249 and 2N5249A are

silicon, planar, epitaxial,
passivated transistors designed especially for low noise preamplifier and small
signal industrial amplifier applications. The units feature low collector saturation voltage, tight beta control and excellent low noise characteristics. The
2N5249A includes a noise figure specification.

absolute

maximum

ratings: (25C)(u nless otherwise specified)

Voltages
Collector to Emitter
Emitter to Base
Collector to Base
Current
Collector (Steady State) *
Dissipation

VcEO

70

V
V
V

Ic

100

mA

Pt
Pt

360
260

mW
mW

T 6

Y16 " % 2 " from

maximum

1:

Lent

*wt

of .021

is

Md.

+ 125C

T,.

+260C

controlM

in

the

TV

it

tt ilof laaj

II

JU

11

pnnr

-55to+150C

Tj

ts

betwnn MO ml 250 from

Batmen 250 mi tnd

Mm.
i.

Temperature
Storage
Operating
for 10 seconds

VcBO

Total Power (Free Air at 25C)f

Total Power (Free Air at 55C)t

Lead Soldering,

50

V BBO

-T555

~
.300

MIN

SEATIW
PLANE

case

*Determined from power limitations due to saturation voltages at this current.

fDerate 3.3 mW/C increase in ambient temperature above 25C.

electrical characteristics: (25C)

(unless otherwise specified)

Static Characteristics

Min.

= 50V)
(Vcb = 50V, T A = 100C)
Collector Cutoff Current (Vcb = 50V)
Emitter CutofF Current (Veb = 5V)
Forward Current Transfer Ratio (Voe = 5V, Ic = 2 mA)
(Vce = 5V, Ic = 100 M A)
Collector Emitter Breakdown Voltage (Ic = 10 mA)
Collector Base Breakdown Voltage (I c = 10 //A)
Emitter Base Breakdown Voltage (I B = 10 ^A)
Collector Saturation Voltage (I c = 10 mA, I B = 1 mA)
Base Saturation Voltage (I c = 10 mA, I B = 1 mA)
Base Emitter Voltage (V CE = 10 V, Ic 2 mA)
Collector CutofF Current (Vcb

Dynamic

Typ.

Max.

lCBO

30
10

Ices

30

Iebo

50

ICBO

Hfe

400

nA
yllA

nA
nA

800

300$

iIfe

Volts

V(BR)CEO|[

50

V (BH)CBO

70

Volts

V(BR)EBO

Volts

VcE(sat)H

.125

Volts

V BB(sat>1[

.78

Volts

Vbe

0.5

0.9

400

1200

Volts

Characteristics

Forward Current Transfer Ratio (Vce = 5V, I = 2 mA, f = 1 kHz)

Output Capacitance, Common Base (Vcb = 10V, I E 0, f = 1 MHz)
Noise Figure (Ic = 100 pA, V OE = 5V, R g = 5 kn, f 1 kHz,

BW = 15.7 kHz)

(2N5249A

only)

hf
C,b

4.0

pF

NF

dB

{Typically, a minimum of 95% of the distribution is above this value.

IfPulse conditions: 300 ^sec. duration, 2% duty cycle.

476

2N5249,

h,.

Vce

Input

and Output Capacitance

vs. Bias

K vs.

5.0V,

Ambient Temperature

I c -IOmA

Voltage

V EB -VOLTAGE EMITTER TO BASE -VOLTS

6

^.^.bo

7
c_ bo

-35
<)

26

-5

25

85

55

115

TA -AMBIENT TEMPERATURE-'C

VCB -VOLTAGE COLLECTOR TO BASE-VOLTS

Iciio vs.

Ambient Temperature

Forward Current Transfer Ratio

vs. Collector

Current

inn

1.0

0.1

0.01

-30

30

60

1.0

90

I e -C0LLECT0R CURRENT-mA

TA -AMBIENT TEMPER ATURE - *C

477

10

Silicon

Transistors

2N5305,6,6A
FOR TO-92 SERIES SEE GES5305

The General

Electric 2N5305, 2N5306 and 2N5306A are NPN, silicon, planar,

epitaxial, passivated Darlington monolithic amplifiers. These devices are especially
suited for preamplifier input stages requiring input impedances of several megohms or extremely low level,
high gain, low noise amplifier applications.
Additional applications include medium speed switching circuits in consumer
and industrial control aDDlications.

INCHES

IIILUMCTEM
MIN.

is*
Oil

*i

os

.01*

tn

IM

1ST
CMS
sco

a.K

on
tOS

maximum

absolute

IN

Lf 10 BUI ETC*
CONTKOLLIB M THC
ZOMC MTWMH OTO MID iso rmam thi sutim
Blihl MT*CEH
) END OF LEAD It Ml
OF Oil WHCLD

SOTt

II

!HU

ratings:

(25C)

(unless otherwise specified)

Voltages

WNOTfjL-,,

Collector to Base
Collector to Emitter

Vcjio

V.

25
25

Emitter

12

Base

to

Volts
Volts
Volts

hi

tpr

_i_

Current

>tnt<

Collector (Steady State)

Collector (Pulsed)*

Ic

Io

Base (Steady State)

300
500
50

mA
mA
mA

400
600
900

mW
mW
mW

Dissipation

Total Power (LS25'C)t

Total Power with Heatsink (Ta
Total Power with Heatsink (T c

Temperature
Storage
Operating
Lead, '/ie"
* Pulse

Derate

4.0
6.0

tf

25
25

tDerate 9.0

C)tt
C)ttt

Pt
Pt

1Y-

IMCHC*

h
1

o.t

,oi.

T,

a " from case for 10

\<

sec.

TL

max.

2%

-65 to +150 C
65 to +125 C
+260 C

I*
L__?
J

duty cycle,

mW/ C for increase in ambient temperature above 25

mW/ C for increase in ambient temperature above 25
mW/ C for increase in case temperature above 25 C.

2N5305
2N5305

,;

2N5306,
2N5306,

A
A

IS

Max.

V (BIOCBO

25

Volts

V(BBH KO

25

Volts

V'BtDKItO

12

Volts

2000
6000
7000
20000

20000
70000

Collector Cutoff Current

= 25V,I e = 0)
= 25V, I k = 0, Ta = 100
Emitter Cutoff Current V, = 12V,
(Vcb

(V cn

IcBO

C)
I,

= 0)

IcBO

100
20

Ik BO

100

Collector Emitter Saturation Voltage

= 200mA, I, =

0.2mA)

VcK(S,

1.4

Base Emitter Saturation Voltage

200mA,

1,,=:

0.2mA)

(V =

Base Emitter Voltage

5V,

I,

200mA)

= 2mA, f = 1kHz)
2N5305
(V, k
= 2mA, f = 1kHz)
2N5306, A
(V,
= 2mA, f - 30 MHz)
Gain Bandwidth Product V, - 5V,
= 2mA, f = 10 MHz)
Input Impedance
V,
= 5V, =2mA, f = 1 kHz)
Collector Base Capacitance (V, = 10V, f =
1 MHz)
Emitter Capacitance
V,. = 0.5V, f - 1 MHz)
(V,

= 5V,
= 5V,
= 5V,

1.6

Volts

1.5

Volts

Min.
hr

2000
7000

15.6

hr.

I,.

I,

I,

478

Volts

VbE(SAT)

I,

I,

nA
*A
nA

V Bn

DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio

fr

Typ.

Max.

dB

MHz

60

650

C,u

7.6

Ci.

10.5

kohms
10

pF
pF

C.

hFB
hFK
hFB

!' r.

Equiv. Circuit

Forward Current Transfer Ratio

(Vc. = 5V, Ic = 2mA)
(V r = 5V, Ic = 100mA)
(Vc E = 5V,Ir = 2mA)
(V CE = 5V, I c = 100mA)

us Mr,

C.

Min.

Breakdown Voltage (Ic = 0.1 (iA, I, = 0)

Collector to Emitter Breakdown Voltage (I, 10mA, I =
0)
Emitter to Base Breakdown Voltage (I K = O.l^A,
I, = 0)

400

*>

1MTCR

Collector to Base

(Ic

MlLU

'VtO

T.

STATIC CHARACTERISTICS

(Ic

oss
os

conditions: 300 ^sec. pulse width,

ttDerate

Pr

3.w nr.

.hmf

COHTMLLEO

IN

>H

2N5305,

2N5306A

= 0.6 mA, Vce = 5V, Ro = 160kn

f = 10 Hz to 10kHz, B.W. = 15.7 kHz)
(Ic

Noise Voltage

NOTE: As meaS ured

on a Quan-Tech Model 2283/2181M test set with 10

Hz

filter

nV/VHz

230

195

ex

modified by Quan- Tech to s wideband

(f

6A

Units

Max.

Typ.

Min.

only

6,

10 Hz to 10 kHz, B.W.

1B.7

kHz)

filter.

Typical Curves

Normalized

Iife vs. Ic

Typical h PB vs. I c

04 06

02

SB
l^

46610

40

20

60K20O

400

IO00

COLLECTOR CURRENT (mA)

I c -C0LLECT0R

Vce vs

CURRENT-mA

lo

1.3

IC '

>
S

Lg-IO.00

i.o

TA

-5 vc

o.B
"
Ta -25 c

I
g

0.8

0.4

-1

-IOC

1
.Bo.2

.
1

300

I--C0LLECT0R CURRENT-mA

VBE(SAT) v

Transconductance Characteristic,

"0

VBi

VS

Ic

20
1

2.2
.''|

i.e

Vce-SV

>

ic' I B - 1000

'

O
<
o

|4

to

O.B

Ta-j;55*C

1.8

ta- ss*c

T A 25'C

Tj25^

i"

>
?

1.2

ta"

>0*C^

"
1

1.0

(A

J?

<

"^

0.6

T** 100*C

0.8

0.4
'

l_LLL
100

1000

I c -C0LLECT0R

IC-COLLECTOR CURRENT-mA

479

CURRENT-mA

2N5305,

6,

6A

Icbo vt. TA

Ikbo v$. Ja

ceo VT I
~VrB -20V
i

wwu

h FE vs. T*

V ra .5\

1000

1000

rc
3
100

*CE

mA

5V

i
o

*20

X^C

<

200mA

10

ie

ZoOm&0^j>

-50 -20

-K)

40 50 60
TA - AMBIENT TEMPERATURE -*C
10

20

30

70

BO

90

-30 -20

HO

I02O3O4O5O6O7D8O90

^Ic-lmA

AMBIENT TEMPERATURE-X

TA -AMBIENT

20
40
0
TEMPERATURE - C

Equivalent Input Noise Voltage and Current vs. Bias Current

I
.4

.6

.8

COLLECTOR CURRENT

-mA

NOTE: Due
is

to the noise characteristics of this device versus frequency,

calculation of noise figure (N.F.) from
not accurate [as is the case with field effect transistors (F.E.T.'.)].

480

eB.

ill

values

BO

100

120

MO

2N5305,

6,

6A

Typical Collector Characteristics

260
1

TA IOO*C

220

Ib-V*^

TA -25'C

Je->

Xn-i>*

Ift-24A_

TA -'C

Ib-ZZmA^

4
e

ie-sq*
<

E ,4U

1,-2 (*

Ib

iBfj^A

**

Ib-Mi-*-

U
O
5

u
o

IO0

IB'V*

o
tIft

'I0*A
1

IB-Si-A

!***

Ib-

IB

40

is-tc*

20

-6A

lB'A/-A

.%
4
6
2
( 4
6
VCE -COLLECTOR-EMITTER VOLTAGE -VOLTS

.2

2.

VfcE -COLL EC TOR -EMITTER

Vgg-COLLECTOR-eWTTER VOLTAGE-VOLTS

260
1

11

TA " 25C

TA (OO'C

VOLTAGE-VOLTS

240
TA - -BS'C

IB" SfA^,
1

IB

-2^

z
K

^^

A^

^x

i- 2|>V

-4*A

120

5
o
o

IOO

lB-3^

g
Ib" I* A

B-'Of ***"
l40

WO

-^

100

X B -6

"*

r*

B-2" A
60
I B .4,

-r-

"*'

20

J_

j
1

VcE'COLLECTOR -EMITTER VOLTAGE-VOLTS

IC

-COLLECTOR-EMITTER VOLTAGE-VOLTS
\fc E

481

-f
2

Vfc

e -COLLECTOR -EMITTER

VOLTAGE -VOLTS

"

Silicon

Transistors

2N5307,8,8A

Kleclric 2N5307, 2N5308 and 2N5308A are NPN, silicon, planar, epitaxial, passivated Darlington monolithic amplifiers. These devices are especially suited for preamplifier input stages requiring
input impedances of several megohms or extremely low level, high gain, low noise amplifier applications.
Additional applications include medium speed switching circuits in consumer and industrial control appli-

The General

cations.

absolute

maximum

ratings:

(25C)

(unless otherwise specified)

Voltages
Collector to Emitter

Venn
VoKO

Emitter to Base

V EBO

Collector to Base

Current
Collector (Steady State)
Collector (Pulsed)*
Base (Steady State)

Volts
Volts
Volts

40
40
12

In

300
500
50

mA
mA
mA

Pt
Pt
Pt

400
600
900

mW
mW
mW

Ic
Ic

Dissipation

Total Power (T\ S 25 C)t

Total Power with Heatsink (T A
Total Power with Heatsink (T c

25

cm

26'Ottt

MIU.MCTEM3

S..I0L

Temperature
-65 to +150 C
T.
Storage
-65 to +125 C
T,
Operating
+ 260 C
Tl
sec. max.
Lead, We" V32" from case for
*Pulse conditions: 300 ,usec. pulse width, 2% duty cycle.
tDerate 4.0 mW/ C for increase in ambient temperature above 25 C.

-..__-.-.-!

41-

MILUMCTOt

tVMtOL

***

4W

.40?

~as04ft

._.L*_
Ot

ttDerate

6.0

tttDerate 9.0

mW/ C for increase in ambient temperature above

mW/ C for increase in case temperature above 25

= 5V, Ic

(V CE

-.

= 40V, I E =
= 40V, Ie =

Min.
40
40
12

Max.

2000
6000
7000
20000

20000

'(BR)CBO
'(BR)CEO
'(BR)EBO

0)

TA =

Emitter Cutoff Current (Veb

2N5308,
2N5308,

"FE

A
A

100 C)

12V,

Ic

. e*

S.M

"FE
"FE

Volts
Volts
Volts

70000

0)
0,

Collector Cutoff Current

(Vcb
(Vcb

r
Mf

Equiv. Circuit

C.

2N5307
2N5307

100mA)

JIT

|:

25 C.

Collector to Base

Forward Current Transfer Ratio

(Vce = 5V, Ic = 2mA)
(Vce = 5V, Ic = 100mA)
(Vce = 5V, Ic - 2mA)

.1*

SEM'M

MOTE kCM> OMMETER IS CONTROLLED 11 THE ZOM

CTVCCM OTO MO 1*0 FW0M TMf tEAtlHB PLMK

STATIC CHARACTERISTICS

Breakdown Voltage (Ic --- O.lpA, Ic = 0)

Collector to Emitter Breakdown Voltage (Ic = 10mA, I B =
Emitter to Base Breakdown Voltage (Ic = O.ljuA, In = 0)

f ROM TXE

*CBO
'ebo

= 0)

100
20

nA

100

nA

j*A

Collector Emitter Saturation Voltage

(Ic

- 200mA,

Ib

0.2mA)

1.4

'CE(SAT)

Volts

Base Emitter Saturation Voltage

(Ic

200mA,

IB

0.2mA)

Base Emitter Voltage (Vck

5V, Ic

'BE(SAT)

= 200mA)

'be

1.6

Volts

1.5

Volts

DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
(Vce = 5V, Ic = 2mA, f = 1kHz)
(Vce - 5V, Ic - 2mA, f = 1kHz)
(Vce = 5V, Ic = 2mA, f = 1kHz)

Min.

2N5307
2N5308,

5V,

|N*I

15.6

= 5V, Ic = 2mA, f = 10 MHz)

=2mA, f = 1 kHz)
Collector Base Capacitance (Vcb = 10V, f = 1 MHz)
Emitter Capacitance
KB = 0.5V, f = 1 MHz)
Gain Bandwidth Product (Vce
Input Impedance (Vce

"fe

2000
7000

Ic

Typ.

dB

MHz

60

h ie

650

Ccb

7.6

10.5

482

Max.

kohms
10

PP

pF

2N5307,
2N5308A

8A

8,

only
Min.

Noise Voltage

NOTE: Admeasured

= 0.6 mA, Vce = 5V, R = 160kfi

f = 10Hz to 10kHz, B.W. = 15.7 kHz)

Typ.

Max.

Units

(Ic

on a Quan-Tech Model 2283/2181M test set with

10

Hz

filter

195

es

230

modified by Quan. Tech to a wideband

(f

10

Hz

n V/ V Hz
to 10

kHz, B.W.

15.7

kHz)

Typical Curves

Normalized h FE
Typical h FE vs.

I c -COLLECTOR

VCE

vs. I c

Ic

CURRENT-mA

vs. I c

1.2

*c' I B -rOiO0

'

i.o

o
>

TA

TA "25'C

0.6

0.4

<

1.

Vbb(sat) vs.

c -COLLCTOR

CURRENT-mA

Transconductance Characteristic,

2.0

VBb

vs.

!
I

1.8

ic /Ig> 1000

vc

IR

S
4
3
4

>

25-C

Tfl'2S*C

TA I00'C

TA 00'C

TA

1.0

TA 55*C

in

14

1.2

ta- 55-C

'-

5V

a)

0.6

>

-^"^
JPO.6

"

10

IC-COLL ECT0 R C /RR EN T-mA

)0

000
IC-COLLECTOR CURRENT- mA

483

2N5307,

8,

8A

K>000

KfeVS. T a

Ikbo vi - Ti

Icbo vs. T A

=1

10000

-Vcb-Z

ebo v.ta :

Veb . 5V

m:

<

1000
/l c *lmA

'

1-

K
J

<c

S
l>

K
o

VCC 5V

>-

9
^

100

WO

it

t~

-J

^c' 200mA

M
10

*c

-30-20 HO

20 30 40 50 60
10
TA - AMBIENT TEMPERATURE -*C

70

80

90

-30 -20 HO

O
TA

10

20

30

40 SO

60

TO

80

90

AMBIENT TEMPERATURE-^

200mA^^
"""le

U.U

-60

ImA

-40

40
60
D
20
-20
T. -AMBIENT TEMPERATURE - *C

Equivalent Input Noise Voltage and Current vs. Bias Current

I
4

B
6
COLLECTOR

CURRENT -

calculation of noise
to the noise characteristic of this device versus frequency,
not accurate [as is the case with field effect transistors (F.E.T.'s)].

NOTE: Due
is

2
ID*

484

fisrure

(N.F.) from eK,

i!

values

60

IOO

IZU

wu

2N5307,

8,

8A

Typical Collector Characteristics

TA -IOO'C

220
1ii'Tj.A

TA -25-C
2O0

200

JB^J

200

__

Tfl -SVC

lB"*.A

lB'24A

iao

IS-22mA_

6
,1

160

140

ISO

z
K

Ib'8A

<

E
y.

140

I B -2 ^A
a.

I B -4/.A

Zb-3mA

Ib->*a
(40

JBJ. KpA

Ib-m^a
f

100

0-A

H 60
IB' *A

H
40
I

4
a6
8
tjD
1. !
1.
1. 4
VCE -COLLECTOR-EMITTER VOLTAOE-VOLTS

(. 9

260

T rOO

ib-6^a
40

20

ip-e^A

,-UA

4
6
(.'
6
U3
1. 2
\J&
VCE -C0LLECTOR-EMITTER VOLTAOE-VOLTS

Il'V
1

20

i*

2.C

Vc e -COLLECTOR -EMITTER VOLTAOE-VOLTS

Ta -26*C

240

240
IB

5^

TA .-B5'C

[,-6jJ^
200

200

V8* 1^

IB-

12^

160

^
z

<

IB ZfiA,

E
160

I ,-4jj

5
u
s

140

u
111

IB

-I

g 100
u
" so

"

-3^

k^,

i 8 -e -A

60

B-U t

__

20

B'l^A

10

re^

I B '2

80
4
4

I-4A

40

eo

X Bjl**

VCE -COLLECTO-EMITTER VOLTAOE-VOLTS

g
;

60

B'lOf *-**"

VcfCOLLECTOR-EKHTTER VOLTAOE-VOLTS

485

10

J
I

Vce -COLLECTOR-EMITTER VOLTAGE -VOLTS

10

Silicon

Transistors
2N5309.10

The General

Electric

2N5309 and 2N5310 are NPN,

silicon,

planar, epitaxial, passivated

transistors. These devices feature very high gain at extremely low collector currents,

low

leakage currents and inherent low noise characteristics. These transistors are ideally
suited for low level amplifier applications and, with leads

uration, are intended to be epoxy replacements for the

absolute

maximum

ratings:

formed to a TO-18 pin config2N929 and 2N930 type devices.

(25C) (unless otherwise specified)

Voltages
Collector to Emitter

V CEO

50

Emitter to Base
Collector to Base

VeBO
VcBO

70

Volts
Volts
Volts

NOTE

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED
TO -98

1:

lead diameter is controlled in the

070 and .250 from the seat
Between 250 and end of lead a

zone between
ing plane

mai

of

021

is

held.

1~T
SEATING

Current

.SCO

Collector (Steady State)*

Ic

100

mA

Pt
Pt

360
250

mW
mW

MIN

PLANE

Dissipation

Total Power (Free Air

Total Power (Free Air

@ 25C)f
@ 55C)t

Temperature
Storage
Operating

-55to+150C
+125C

T,

Lead Soldering, 1/16" 1/32" from

case for 10 sec. max.

+260C

*Determined from power limitations due to saturation voltage at this current.

fDerate 3.6 mW/C increase in ambient temperature above 25C.

electrical characteristics: (25C)

(unless otherwise specified)

Static Characteristics
Collector Cutoff Current

(Vcb
(Vcb

= 50V,TA=
= 50V)

Min.

(Vcb = 50V)
100C)

Emitter Cutoff Current (Veb

= 5V)

Forward Current Transfer Ratio (Vce

Collector Emitter

Breakdown Voltage

5V,

(I c =:

Ic

10

2N5309
2N5310

10 fiA)

mA){

= 10 /iA)
Emitter Base Breakdown Voltage (I E 10 /iA)
Collector Saturation Voltage (I c = 10 mA, I B = 1 mA)
J
Base Saturation Voltage (Ic = 10 mA, I B = 1 mA) %
Base Emitter Voltage (Vce = 10V, Ic = 2 mA)
Collector Base

Dynamic

Breakdown Voltage

(I

Max.

IcBO

10

nA

IcBO

ixA

Ices

10
10

Ik bo

50

hrE

60

Hfe

100

nA
nA

120
300

V(BR) CEO

50

Volts

V (BR) CBO

70

Volts

V(BR> EBO

Vce

(aat)

V BE

Vbe

at)

.5

Volts
.125

Volts

.78

Volts

.9

Volts

Characteristics

Forward Current Transfer Ratio (Vck

10V,

Ic

10 /iA, f

kHz)

Output Capacitance, Common Base

(Vcb = 10V, Ik = 0, f = 1 MHz)
JPulse conditions 300

,usec.

2%

duty cycle.

486

2N5309
2N5310

h (6
h,,,

66
110

Ccb

1.0

4.0

pF

2N5309, 10

Normalized

Fife vs. Ic

2.5

2N5309

>

2N53I0

UJ

.c

Q
u

NORMAL

1.5

0.5

0.01

0.001

100

1.0

0.1

I c -COLLECTOR CURRENT-mA

Small Signal Current Gain vs. Collector Current

VCE

5V
TA = +25C

+ lg5C

2N5309

V C E 5V
TA +25
2N53I0

FE VS VCE

ZV,

f=lkHz

hp E uu

.75M

^^^

S
.

-"

-55c

f=1kHz

-^

< +Z5C

IV

100

+ 125 C

" + 2SC

iov

""

hFE DC

-S5C

100

.75MHz/

2.5

MHz
5MHl

h ft

VS VCE

10V

5MMI h VS VCE

tov^^^

--"*"

<^5v

2.5MHz>"

5MHz
10

5MHz>'

^/lOMH^
y/ZO MHz,

IOMHz >
50 M

H2^^

y
100

50 MH

ZOMHzjf

rtHz^

01
0.01

^IOOMHz^
1

0.1

I c -C0LLECT0R

0.01

1.0

CURRENT-mA

487

z^^

1^
1.0

2N5309, 10

Typical Collector Characteristics

2N5309

2.0

.12

TA-+25C

-55'C

^"Ti

I.8

.10

.012^

.09
.011^

.08
1.
i

.010,,

I-

.07

009_

I-2

.06

.008^

10

.05

.007
Ij

o
o
o

UJ

0.8

.04

.006 ^
.005

0.6

.03

004

>')
S

003
.002

IB- 001
10

30

40

T B = .0ln

|IB = 0mA

60
70
80
VCE -COLLECTOR-EMITTER VOLTAGE- VOLTS
20

p.

50

90

100

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VCE - COLLECTOR-EMITTER VOLTAGE-VOLTS

4.0
1

TA =+I00C
.012^
.011

.010

2.8

.009
2.4

.007

.006
1.6

/h

.005

.004

v\

0.8

.002
|

is .00lniiA

y
J
y

I B -0 mA

10

20
30
40
50
60
70
80
VCE - COLLECTOR-EMITTER VOLTAGE- VOLTS

90

10

488

20
30
40
50
60
70
80
VCE - COLLECTOR-EMITTER VOLTAGE -VOLTS

90

100


Typical Collector Characteristics

2N5309, 10

2N5310

.10

20

4.0

.09

TA-+25*C

TA = -55"C

.08
.07
3.2

ZyS

.0

.06

<
7

14

12

10

*r.Q\\S

.05

2.4

,04_

oe^x

<r

///f

2.0
,0<

^^

'5:^oc

7^*

,03_

.OC

.02

.005

.004

0.8

I B = .0lmA

.003
0.4

Ig-OmA

iB'-OOImA
I

"0

10

40
70
80
20
30
50
60
VCE -COLLECTOR-EMITTER VOLTAGE -VOLTS

90

100

0.1

5.0

5.0

>

0.6

0.7

0.8

0.9

1.0

4.5

.00=
4.0

4.0
.

S.oot^/S

009^

<

3.5

3.5

.007^X

.008/

3.0

3.0

.006^

.00^,

c
o

0.5

TftS+IOCC

.010^.

QXZySC

^T

0.4

.011

Ta=+25"C

0.3

0.2

VCE -COLLECTOR- EMITTER VOLTAGE- VOLTS

2.5
.0

36^*--

.005^^

.00
2.0

2.0

.004>^
1.5

1.0

.OOj^X^

2*^'

0.5

Ib =
10

.004^

.001

mA^

//

7
/

.003

.002

1.0

0.5

IB' OmA

70
80
50
60
20
30
40
VCE - COLLECTOR-EMITTER VOLTAGE-VOLTS

iB'OOImA

lB=0mA

90

"0

100

489

10

70
80
90
50
60
20
30
40
VCE - COLLECTOR-EMITTER VOLTAGE-VOLTS

100

Silicon

Transistors
2N5354,5,6

This series of

economy

transistors are

PNP,

silicon, planar, epitaxial, passivated devices.

These units feature low collector saturation voltage, good current gain linearity over a wide
collector current range, high gain-bandwidth product,

make

and low

these units excellent for use in general purpose

noise.

These characteristics

consumer and

industrial amplifier

and switching applications.

maximum

absolute

ratings:

(25C) (unless otherwise specified)

Voltages
Collector to Emitter

'CEO

VF

Emitter to Base
Collector to Base

-25

Volts

Volts

-25

Volts

'CBO

Current

.205

hSH
075

070 and 2M from the sealBetween 250 and en a ot lead a

021 i% held

rone between
ing plane

Collector (Continuous)
Collector (Pulsed,

2% Duty

mA

350

/isec pulse

max

of

Cycle)

mA

700

Ic

iJUU

width,

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

TO-98

V-

.500

SEATING

MIN

PLANE

.050+ .005
.100*. 005

Dissipation

Total Power (Free Air at 25C)*

Total Power (Free Air at 55C)*

mW
mW

360
260

Pt
Pt

LEADS

(NOTE

105

090
(r
-\N

1

'

140

i*E C

B',

"no"

Temperature
Storage

T stg

65 to +150

Operating

Lead temperature, 1/16"

* Derate 3.6

C
C

+260

1/32" from case for

maximum

ten seconds

+ 125

m W/C increase in ambient temperature above 25C.

electrical characteristics:

Q^O Cy (unless otherwise specified)

Static Characteristics

Min.

Typ.

Max.

Collector Cutoff Current

(V CB -25V)
(V CB =-25V,T A =100C)
(V CB=-25V)
Emitter Cutoff Current (V EB =-4V)
Forward Current Transfer Ratio
(V CE =-10V,I c =-2mA)
(V CE =-lV,I c =-50mA)

100

CBO
IcBO

10

100
l

10

EBO

2N5354
2N5354

h FE
h FE

32
40

h FE

20

(V CE =-10V, I c =-2mA)
(V CE =-1V, I c =-50mA)

2N5354
2N5355
2N5355

h FE

h FE

80
100

300

(V CE = -5V, I c = -300 mA)

(V CE^10V, I c =-2 mA)
(V CE=-lV,I c =-50mA)

2N5355
2N5356
2N5356

h FE
h FE
h FE

40
200
250

500

(V CE =

2N5356

*FE

75

(VCE = -5V, I c = -300

-5V,

Ic=

Collector Emitter
(I c

mA)

-300

mA)

nA

M
nA
M

120

Breakdown Voltage

=-10mA)

(BR)CEO

25

Volts

Collector Saturation Voltage

(I c =-50 mA, l B =-2.5 mA)

CE(sat)

-.250

Volts

mA,

CE(sat)

-1.0

Volts

(I c =-300

B =-30

mA)

490

2N5354,
Min.

Base Saturation Voltage

(I c =-50 mA, I =-2.5
B
(I c =-300

mA,

B =-30

mA)
mA)

Base Emitter Voltage

(V CE =-10V,I c =-2mA)

Dynamic

Typ.

5,

Max.

'BE(sat)

-1.1

Volts

^BEfsat)

-2.0

Volts

-0.8

Volts

'

-0.5

BE

Characteristics

Forward Current Transfer Ratio

(V CE -10V, I c =-2 mA, f=l kHz)

(V CE=-10V, I c ^2 mA, f=l kHz)
(V CE=-10V, I c =-2 mA, f=l kHz)

Common

Output Capacitance,

(V CB =-10V,

32
80
200

hf e
hfe
hfe

180

450
750

Base

MHz)

E =0, f=l

Common

Input Capacitance,

2N5354
2N5355
2N5356

PF

Base

(V EB =-0.5V,I c =0,f=lMHz)
Gain Bandwidth Product

Cab

35

(V CE =-10V,I c =-2mA)

PF

MHz

250

CONTOURS OF GAIN BANDWIDTH PRODUCT,

TYPICAL

(f T )

VS.

COLLECTOR CURRENT

2N5354

2N5355

T EX PRES SE DIN

fc

"'"1
f

T EXPRESSED

IN

M Hz

TTTT

?'

r\

-v

II

L
S

utttt

14

"

'c

\
|\

'

-mA

-COLLECTOR CURRENT

SE
Tijn

|t

[t

ft

It

^IN
I

>

lr

T_

v.

v_

111
1

1-

] \

IO

h-

g ? ?!? D?

-s

I'll

II

II

o o

I A
In
$

\ )>-> ^
V

k.

'.^

COLLECTOR CURRENT-mA

TYPICAL

'

2N5356

NORMALIZED H FE

T EXPRESSED

IN

II

1
1

MHs

-.?. -8

=.o

=,

II

".'J.TTV
F
s
'

T
T
T
T
T

s ]s

"'""
\c'

--*iii

e-

LTS

t- SOmA

""

"""""

-"""'"la
rtt--

TEMPERATURE

"1

4 ^ V&

VS.

2N5354, 5355, 5356

'

""

nt\v~
H\^:-
TT 4 ^ """
"
;

^rO-.r-

COLLECTOR CURRENT-mA

0.29

TA

491

-MMCNT TEMPOMTUK

-*C

2N5354,

TYPICAL SMALL SIGNAL CHARACTERISTICS

5,

VS.

EMITTER CURRENT
2N5354, 5355, 5356

= 20
<

TA -25 c

<

f -

Ik

^V,

h ra

i
Q
"r.
01

>

1.0

-*

.6

^"*

r^

.4

h 0

.2

^H.
'o

Q5

LO

90

2.0

80

io

EMITTER CURRENT - m A

TYPICAL

TYPICAL

SMALL SIGNAL CHARACTERISTICS

COLLECTOR CUTOFF CURRENT

(l
cbo ) VS. TEMPERATURE

VS.

COLLECTOR VOLTAGE

2N5354, 5355, 5356

2N5354, 5355, 5356

SO
hr

50

40

IE

-2mA

TA -29'C

30

3 20
|

o
*"

10

/
3

3 60

40

v CB

--av/

I"

ho,

'0

aii r#

hf,8
l>M

4
IS

23 3

4
V

810

20

304090
-AMBIENT TEMPERATURE -

CE ~ COLLECTOR-EMITTER VOLTAGE -VOLTS

"C

TYPICAL SMALL SIGNAL

CHARACTERISTICS
f = 1 kHz,V CE =10V, E = 2 mA
l

Symbol
hi.

Input Resistance

ho.

Output Conductance

2N5355

2N5356

1300

2000

8700

ohms

24

37

100

Mmhos

100

150

450

2N5354

Characteristic

h,.

Forward current transfer

hr.

Reverse voltage feedback ratio

ratio

492

1.5

2.0

4.0

Units

IO"*

"

2N5354,

5,

TYPICAL
BASE SATURATION VOLTAGE
VS.

COLLECTOR CURRENT
2N5354, 5355, 5356
1

le -

10

-68'C

H
!

i-M^C^

.
X
T

A" I00JC,

Ie

-COLLBCTM CU*T-m.

TYPICAL

OUTPUT CAPACITANCE AND INPUT CAPACITANCE

VS.

REVERSE BIAS VOLTAGE

2N5354, 5355, 5356

*7?
13

^
X.

\|
i

s.

5
.?

s,

N\V

r\ \

f
'

V- VERSE

493

HAS

VOLTAGE-VOLTS

2N5354,

5,

TYPICAL FORWARD CURRENT TRANSFER

RATIO VS. COLLECTOR CURRENT

TYPICAL TRANSFER CHARACTERISTICS

2N5354

2N5354
i

HFE VS c Ct

5 VOLTS

120

v cE

A -IO0

3 V

T^w-c

60

s*

^ti^zvc
u

o.e

T*

COK.

T"

" 5S

l^

f
!

CURRENT- MA

c -COLLECTOR CURRENT-i

2N5355

2N5355

HF E VS l c

-M

X.

S o.

^
/

f
a.

250

V-M^.

5 VOLT s

A"* c

T ..j^c-

150

1
T

ju

100

100* c,
'

-53 c

50

I-

COLLECTOR CURRENT-

Ie

2N5356

-COLLECTOR CURRENT -m*

2N5356

TOO
!

HFE VS I c
S VOLTS
Vfcg
1

Vcj-W

-IOO'Cj*

OS

*-55C

i
g 07

z 400

ES-C^

'

100'C

JB

t
J

10
,

Ic

-COLLECTOR CURRENT-ni*

Ij

494

-COLLECTOR CURRENT-mJ

30

TYPICAL COLLECTOR SATURATION VOLTAGE

2N5354,

5,

VS.

COLLECTOR CURRENT
2N5354
8

.6

c" r B

08
%

^/^li-25'^f^^

.06

S^ A-S5 C
T

Sr T/?K>0C

..

Vioo-c

.04

.02

Z5 * C

.6

2O0

100

t.C

-COLLECTOR CURRENT

4O0 500

2N5355

-iOi B

*-*^^
TA

V'zsi

40

GO

200

100

400 500

-COLLECTOR CURRENT -mA

2N5356

y<

/y

lc'10%

T*.nn T

^rr T*

200

495

4O0 500

2N5354,

TYPICAL COLLECTOR CHARACTERISTICS

5,

2N5354
Tft -2S*C

/"/

T.-2S-C

,**/

//// '/

*2^

T^

^g!>

^
^

^
4^

>y ^

^Sy
y

*z

^
^^=

/U

.tc

*p-

;^-

^j*0_
\2i
O0l"i

y
__Jci

_ji

t=Z

40

M^

20/>ft

-CCLLEt TOR

MK)

B-0

k-o

ft

100

so

H50

ao

V^- COLLECTOR WLTAGC-

VO -TME-i. iMmta

VOLTS

2N5355
},-2S*C

^<^

ff
"

<gy
y- ^

*>+>

/J
/
<

^505^

'

c*-

s^^.

W**
ZOmA

"

k-q
V^E -COLLECTOR

2N5356

V23*C

^z

[
T,.

fr,
/

$$

'I/

It;

S&
%>
k
^^^
^'
fe

#5fy

/ /

WX.TIME

i
1

A/

/ v

>

i/ /

/
'
,

'

/
V
'^""
1

19

^
20 c

300

/
/
/

%y

eo

V/

'

_J?JS

/
'

/ / /
/ / /
/ / /

f/,

/
/

S-

/ /

/?/ /

<

VOLTS

7~yJ

:/// /

// //
{
/
/

<^

t/
i^~
fe'O

ol

400

490

900

.-COLLECTOR VOLTME -VOLTS

496

2N5354,

2N5354

5,

N^
R opT

ldB>

2dB^
^

3dB,

4d3
5dB

==

"""

6dB
8dB

ffdB
10

I, COLLECTOR CURRENT

dB

mA

2N5355
V.

s l^

\
RopT>

\
\

UB"
v.

VN

2dB >

5dB
**,""

*'

iBj-

"^
.

<*7dB
s
8dB
1

9d8
lOdB
1.0

0.1

I. COLLECTOR

CURRENT mA

2N5356
10

n\\i

y\

wKi

Is
vKv

^N^op

^
^ v<
j\

3
z

kjdf*

Z>

z
.

y
3

3dB

10

KHR J-

J~

(rt

^jas>
Sd B

X
.01

It-

COLLECTOR CURRENT mA

497

9- B
,OdB

Silicon

Transistors
2N5365,6,7
2N5368-83 SEE GES5368-83

This series of economy transistors are

PNP,

silicon, planar, epitaxial,

passivated devices.

These units feature low collector saturation voltage, good current gain linearity over a wide
collector current range, high gain-bandwidth product, and low noise. These characteristics

make

these units excellent for use in general purpose consumer and industrial amplifier

and switching applications.

absolute

maximum

ratings:

(25C)

(unless otherwise specified)

Voltages
Collector to Emitter

VcKO

-40

Emitter to Base
Collector to Base

V RBO

-4

VcBO

-40

Volts
Volts
Volts
DIMENSIONS WITHIN
JEOEC OUTLINE TO-M

Current
Collector (Continuous)
Collector (Pulsed, 10 ,usec pulse width,

= 2%

Duty Cycle)

mA

300

Ic

Wm

1: l**l dimeter n onfrolW m V*

raw bttwan OR and .MO Iran tht sm
inf plm. Btttmtn XH tnd tnd ot tad
mat of
b hM.

mA

700

Ic

Px
Pt

mW
mW

360
260

Temperature
Storage
Operating
Lead temperature, 1/16" 1/32" from
case for ten seconds maximum

mW/C increase

in

-65 to +150

T.
T,

+ 125

+260

r,

WIN

electrical characteristics:

(25 C)

.090

-Ml
1)

^JZ

(unless otherwise specified)

Max.

Collector Cutoff Current

= -40V)
= -40V, TA =
= -40V)

(Vcb
(Vcb
(Vcb

Emitter Cutoff Current

100C)

(V EB

= 4V)

nA

IcBO

-100

IcBO
IcKS

-10
-100

nA

Iebo

-10

mA

Forward Current Transfer Ratio

=
=

-2 mA)
(Vce = -10V, I c
(Vce = -IV, Ic
-50 mA)
(Vce = 5V, Ic = - 300 mA)
-2 mA)
(Vce
-10V, Ic
(Vce = -IV, Ic = -50 mA)
(V CE = 5V, Ic = - 300 mA)
(Vce = -10V, Ic = -2 mA)
(Vce
-IV, Ic = -50 mA)
- 300 mA)
(Vce
-5V, Ic

=
=

Collector Emitter
(Io

2N5365
2N5365
2N5365
2N5366
2N5366
2N5366
2N5367
2N5367
2N5367

32
40
20
80
100
40
200
250
75

hrs
hrs
IIfe

hrE

hrE
hFE
hrE
hpB
hrs

120

300

500

Breakdown Voltage

-10 mA)

V(BR) CKO

-40

Volts

Collector Saturation Voltage

(Ic
(Ic

= -50 mA, I B = -2.5 mA)

= -300 mA, I B = -30 mA)

VcK<.,)

VcEd.l)

-.250
-1.0

Volts
Volts

-1.1
-2.0

Volts
Volts

-0.8

Volts

Base Saturation Voltage

(Ic

(Ic

= 50 mA, I B = -2.5 mA)

= -300 mA, I B = -30 mA)

VB(iit)

Vbk ((lt)

Base Emitter Voltage

(Vce

-10V,

Ic

= -2 mA)

-0.5

498

SEATING

PLANE

rr_J05

LEADS

Mr

C
C

Min.

f~
,M5

-rOOt.OOS
3

ambient temperature above 25 C.

Static Characteristics

3T

rmnr

(NOTE

ALL UMEM. M MCHES AMD ARE

REFEIENCC UNLESS TOLERANCXD

Total Power (Free Air at 25C) *

Total Power (Free Air at 55C) *

3.

OTS
055

Dissipation

Derate

HBH

2N5365,

Dynamic

Characteristics

Forward Current Transfer Ratio

( Vce = -10V, lo = -2 mA,

f = 1 kHz)
= -10V, Ic = -2 mA, f = 1 kHz)
(Vce, = -10V, Ic = -2 mA, f = 1 kHz)

2N5365
2N5366
2N5367

(Vce

Common

Output Capacitance,
(Vcb

-10V,

Veb

0, f

Common

Input Capacitance,
(

IE

-0.5V,

hfe
hfe

450
750

Base

MHz)

Ccb

PP

Ceb

35

pF

Base

= 0, f = 1 MHz)

Ic

32
80
200

hfe

Max.

Typ.

Min.

6,

Gain Bandwidth Product

(Vce

-10V,

Ic

= -2 mA)

MHz

250

fx

TYPICAL CONTOURS OF GAIN BANDWIDTH PRODUCT,

(f T )

VS.

COLLECTOR CURRENT
2N5366

2N5365

Mil
MH

fT EXPRESSED IN

"

II
I

t
o
o

S ?

o
9

"

t~-

II

^.

O o

lo

o
o

II

?l
I

o
O

H"

I
I

\
r

V ^V

-I-

tv ^

t-

h-

Ml"MH

& PRESSED IN

~~o

"

J]

?\

M
W

>-

*-

*...

-COLLECTOR CURRENT -mA

V
V

k.^ -> *-

-COLLECTOR CURRENT

-mA

TYPICAL
VS. TEMPERATURE
2N5365, 5366, 5367

NORMALIZED H FE

2N5367

W
t

T"~r-i

-OLT5

le-

OmA

T EXPRESSED INK Hz
1

II

t-

-8

O
O
N

O o
?
r-

t-

"I

5
3

o,

3
|

I
I

\
\

\V
Kk,

'^

\\

--

04

-^_

03

Ic- COLLECTOR CURRENT

-AMBIENT TEMPERATURE

mA

499

*C

2N5365,

6,

TYPICAL FORWARD CURRENT TRANSFER

RATIO VS. COLLECTOR CURRENT

TYPICAL TRANSFER CHARACTERISTICS

2N5365

2N5365

/
i

v CE

jHFE VS c V CE '5 VOLTS

5V

/
1
i

30-C

-ss*c

J;
\\
T4 25*C

*5*

s
i

...

^:
V

oc "c

-! C_

J?

o'f

-COLLECTOR

L;

CURRENT- ml

2N5366

2N5366

HFE ^S

VCE* 5V LTS

300

VCE" 5v
T

A*

* 55
a.

250

1^-

25* C
!
1

i
'

"l!^-

l5

TA

KX) C

'CO

-55 C

50

Ic

-COLLECTOR CURRENT -mA

-COLLECTOR CURRENT-

2N5367

2N5367

|HFE VS I C
VCE = 5 VOLTS
!

^,

600

*CE-

/'

1
|
'

A'-55C

Tfl

lOO'C

-*
-

500

Jf\
*c

^^s?r

->

* 20O

\
\

<

L
c
It

-COLLECTOR CURRENT-mA

-COLLECTOR CltftRENT - mA

500

oo

10

TYPICAL COLLECTOR SATURATION VOLTAGE

2N5365,

VS.

6,

COLLECTOR CURRENT
2N5365
e

TA--SS*C j"

^>2S
T A"

oo-c

i*ioo*c

>A~5S'C

E
3

.06

.04

J
1A -2S*C

j3

01

4O6OB0KX)

20

10

400600

200

COLLECTOR CURRENT-mA

2N5366

t?

ob

*
I e >K)I

-M-C

.
-

V 25-C

kr

A .ioo-c

n.

n.

Vioo

c
T-23-C

i 4

V-a*c'

Of

a6

u3

Ie

COLLECT OR

K>

413

9a

k K)

501

CURR ENT-mA

2N5367

o8

VM-C,

V
T4-I00"C

Tj-ZS-C

V
m

V-t
01
2

2
l

-C0 -LECTW

501

cut mew T-m

00

X 10

40O 5 00

2N5365,

6,

TYPICAL SMALL SIGNAL CHARACTERISTICS

VS.

EMITTER CURRENT
2N5365, 5366, 5367

Vi.

TA -25 c
f

Ik

-hf^^

.3

-^

^hna

^^i*
3

.1

30
*E EMITTER CURRENT m A

80

21

TYPICAL

TYPICAL

SMALL SIGNAL CHARACTERISTICS

COLLECTOR CUTOFF CURRENT

Ccbo) vs TEMPERATURE

VS.

COLLECTOR VOLTAGE

2N5365, 5366, 5367

2N5365, 5366, 5367

80
**

50

40

iE

2mA

'2S-C
f

3 20
<

o
o
K

"
CB' 40v

y'

10

6.0

3.0

'.0

afc

H * eU
h

*l.

ShT%

le

4
2

1.5

25 3

4
5
8
K>
20
30 40 SO
V CE - COLLECTOR- EMITTER VOLTAGE-VOLTS

90

29
TA

75

IBS

KK>

-AM8IENT TEMPER*TURE-*C

TYPICAL SMALL SIGNAL

CHARACTERISTICS
f

Symbol

kHz, Voe

10V, l B

= 2 mA

2N5365

Characteristic

h,.

Input Resistance

hoe

Output Conductance

ht.

Forward current transfer

hre

Reverse voltage feedback ratio

ratio

502

2N5366

2N5367

1100

3200

5800

ohms

18

35

58

pmhos

100

200

400

1.2

3.0

5.0

Units

10""

2N5365,

6,

TYPICAL
BASE SATURATION VOLTAGE
VS.

COLLECTOR CURRENT
2N5365, 5366, 5367

||

:
1

lc

K3 U,

T ft

T ft

-,*^^

.^sc^--

-._..
T

A' 100'C,

Ic

-COLLECTOR CURRENT-'

TYPICAL

OUTPUT CAPACITANCE AND INPUT CAPACITANCE

VS.

REVERSE BIAS VOLTAGE

2N5365, 5366, 5367
i

111!
._^

n
....

i_.._

~j

\c

^^L^

1~~"

'

'
'
i

OR V E .-REVERSE BUSS VOLTAGE-VOLTS

503

2N5365,

6,

TYPICAL COLLECTOR CHARACTERISTICS

2N5365

TA 2S*C

P*/
\,

/^O

/
/

(^S*
//

/
/

'

'

<*

<

r?

^T
100
-

COLLECTOR

VOLTAGE

37
/ Ltt
<y

/j

>

V^

'

/ *T&V

-&*
2CV*
VqZ COLLECTOR

120

VOLTAGE

VOLTS

mllllvolli

2N5366
TA !S*C

V*

'

>/

<sy

'

//
/

v1

^*/

'

16

1/

&y

fc
^ *&/ / 3K
x^l+S / /
y tJX
y TI

/&

S*^s

/"

/ y

4^^
A ^^ ^
y

4.

'

'^--

^s>

TOi-

'

_&>tL-

_-

10 1.*
!B-

ZLT

*
0.

33
o
s3
COLLECTOR VOLTAGE - VOLTS

so

eo

2N5367
Tfl -2

'

7/

zy c

/// 7_

f*

7,

#V/

* ,

///

{/#/\
' AF?/

/
fji

m
^
=J ^ v>
s
*

W\fe

r^

yy

/ ,// //I
/

/ /_/
uL
(

//
/ /

vf

^/

>.

1
>

s^
**>t-

jl

/
3

*10

^-V^

Wo
K

a
VCE'COU.ectcw

504

*
va TAO-

50
VOLT s

11

so

2N5365,
10

wiS A
1\\\

V\v
\ \\\ \sv
N s\
.

\\

mY

V)

6,

hdE

\^
"opT

s
:

\\

Z
2dB

\\

<

t-

,3dB 7s

tn

UJ

*6b)

^
idB

'odE

N
.

J'

tO

7dB

kvv

\\\

J
-8dB

5^-~0HP
*^IOdB
1

1.0

.10

I-

COLLECTOR CURRENT mA

I. COLLECTOR CURRENT

mA

10

0.1

I c COLLECTOR CURRENT

505

IT\A

Silicon

Transistors
2N5418.19.20
2N5447-51 SEE GES5447-51

This series of transistors are NPN silicon, planar, epitaxial, passivated deThese units feature low collector saturation voltage, good current gain
linearity over a wide collector current range, high gain-bandwidth product,
and low noise. These characteristics make these units excellent for use in general purpose consumer and industrial amplifier and switching applications.
vices.

absolute

maximum

ratings: (25C)(un less otherwise

specified)

Voltages

Vra

Collector to Emitter

Emitter to Base
Collector to Base

25
4
25

Vei-.o

V CBO

Volts
Volts
Volts

.205
""

JUTE

).- Lead diameter is amitcOtd in the

zone between .070 and .250 tram the seat-

Current

ing plane.

Between .250 and end

max. of .021

Collector (Continuous)

is

ten seconds

^Derate 4.0

.075

Pt

400

TO-98

mW

JJUU
/ lion.

-65

"

%,"

in

T,

+ 125

C
C

T,.

+260

.140

UP-

from case for

maximum

mW/C increase

+150

ambient temperature above 25C.

electrical characteristics:

(25C) (unless otherwise specified)

STATIC CHARACTERISTICS

Min.

Max.

Collector Cutoff Current

(Vcb
(Vcb
(Vcb

= 25V)
= 25V, T A = 25V)

100C)

IcBO

100

nA

IcRO

10

nA.

ICES

100

nA

10

fiA.

Emitter Cutoff Current

(V EB

5V)

Forward Current Transfer Ratio

(Vce = 10V, Ic = 2 mA)

= IV, Io = 50 mA)
= 5V, Ic = 300 mA)
= 10V, Ic = 2 mA)
(V CE = IV, Ic 50 mA)
(Vce = 5V, Ic = 300 mA)
(Vce = 10V, Ic = 2 mA)
(Vce = IV, Ic = 50 mA)
(Vce = 5V, Ic = 300 mA)
(Vce
(Vce
(Vce

Collector Emitter
(Ic

10

2N5418
2N5418
2N5418
2N5419
2N5419
2N5419
2N5420
2N5420
2N5420

riFE

25
40
20
70
100
40
150
250

hpE

75

V(BK) CEO

25

llFE

hpE
Iipe

hpE
hpE
riFE

hpB

120

300

500

Breakdown Voltage

mA)

Volts

Collector Saturation Voltage

= 50 mA, I B = 2.5 mA)

= 300 mA, I B - 30 mA)

VcB
VcE

(SAT)

250

(SAT)

1.0

Base Saturation Voltage

(Ic = 50 mA, I B = 2.5 mA)
(Ic = 300 mA, I B = 30 mA)

Vre
VbE

(SAT)

1.1

(SAT)

2.0

(Ic
(Ic

506

PLANE

.090

W7*"
(NOTED

to

SEATING

MIN

-IOO .005
002

T.

.500

3 LEADS '

Jf6

of lead a

held.

all omen, in inches and are

reference unless toleranced

Temperature
Storage
Operating
Lead temperature,

500

I<

Dissipation

Total Power (Free Air at 25C) *

.193

HH

Volts
Volts

Volts
Volts

2N 541 8, 19,20

Min.

Typ.

Max.

Base Emitter Voltage

(Vce

10V,

Ic

= 2 mA)

VE

0.5

0.8

25
70
150

400
650

Volts

DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
(V CE = 10V, Ic = 2 mA, f =
(Vce
(Vce

=
=

10V,
10V,

Ic

Ic

= 2 mA, f =
= 2 mA, f =

Output Capacitance,
(Vcb

1
1

kHz)
kHz)
kHz)

Common

= 0.5V, Io =

0,

2N5418
2N5419
2N5420

hr

150

Base

10V, I E 0, f = 1 MHz)

Input Capacitance,

(Veb

Common

pF

C,

Base

= 1 MHz)

35

Gain Bandwidth Product

(Vce = 10V, Ic - 2 mA)

250

pF

MHz

507

Light DeteCtOr

Planar Silicon Photo-Darlington Amplifiei

2N5777-80
This General Electric Light Sensor Series

many

is

an

NPN

planar silicon photo-darlington amplifier. For

applications, only the collector and emitter leads are used.

A base

lead

is

provided to control

and the gain of the device. They are packaged in clear epoxy encapsulant and can be
industrial and commercial applications requiring a low-cost, general purpose, photo-

sensitivity

used

in

sensitive device.

maximum

absolute

ratings: (-25C)

Voltages Dark Characteristics

Collector to Emitter
Collector to Base
Emitter to Base

(unless otherwise specified)

2N5777, 79

2N5778, 80

(L14D1.3)

(L14D2.4)

vCEO
v CBO
v EBO

25
25

40
40

Volts

12

Volts

Volts

Current
Light Current

250

II

DIMENSIONS WITHIN
JEOIlC OUTLINE T0-92

mA

250

SEAT
PLfl

NOTE

1: Lead diameter is
in the zone between
.070 ond .250 from the seating
plane Between .250 and end of

controlled

Dissipation

Power Dissipation*

pt

200

mW

200

ALL DIMEN.

Temperature
Junction Temperature

Tj

Storage Temperature

T stg

3LEAI

lead o max. of .021 is held.

IN

INCHES AND

U "(NOTE

ARE REFERENCE UNLESS

T0LERANCE0.

-100C

.170

"~:t35

-65Cto+100C

electrical characteristics: (2 5 C)

(unless otherwise specified)

Static Characteristics

2mW/cm J **)

Forward Current Transfer Ratio (Vqe = 5V,

I
c = 2.0mA)

*FE

2IM5777, 78
Min.
Max.

Min.

0.5

2.0

1.0k

2.0k

Min

2N5777. 79
Max.

Dark Current (V CE = 12V, 1 B = 0)

Collector-Emitter
(I

c = 10mA,

Collector-Base
(I

C =

''jS.OOO

2N5779, 80
Max.

I.205

* 1556

mA

.105

LJT

r*"

2N5778, 80

Max

Min.

100

nA

100

Breakdown Voltage

= 0)

V (BR)CEO

25

40

Volts

V (BR)CBO

25

40

Volts

V (BR)EBO

12

Volts

Breakdown Voltage

lOO/i A,

= 0)

Emitter-Base Breakdown Voltage

(I E = 100 M A, H = 0)

2N5777-80

Dynamic

If .04!

-o o-

J65J05

Light Current (V CE = 5V,

1
.05!

'Derate 2.67mW/C above 25C ambient

Characteristics

Min.

Typ.

J_

Max.

060

Switching Speeds (Vce = 10V, II = 10mA,

R L = 100 ohms, GaAs LED source)
Delay Time

Collector-Base Capacitance (V CB = 10V, f =

Emitter-Base Capacitance (V EB = 0.5 V, f =

Collector-Emitter Capacitance

f-lMHz)

(VcEO

30

tr

75

100
250

ts

0.5

/isec.

tf

45

150

/isec.

c cb

7.6

10

PF

c eb

10.5

pF

td

Time
Storage Time
Fall Time
Rise

1MHz)
1MHz)

y. sec.

Msec.

= 10V,

C ceo

3.4

**H = Radiation Flux

Density. Radiation source is an unfiltered

tungsten filament bulb at 2870K color temperature.

508

pF

030

THE O.OBe SQUARE PELLET

WITHIN THE SHADED AREA

IS

THE ACTIVE AREA IS

CENTERED WITHIN A OOI5"
SQUARE ON THE PELLET
SURFACE
DIMENSIONS

IN

INCHES

u u w
B

T-06O

PELLET LOCATION

TYPICAL ELECTRICAL CHARACTERISTICS

2N5777,80

IftS

I0 Z

a
a

I.O

Vce'IZV

40

3.0

2.0

50

O.I

t.0

75

I00

IZ5

T-TEMPERATURE-'C

VCE -COLLECTOB TO EMITTER VOLTAGE-VOLTS

2. NORMALIZED LIGHT
CURRENT VS. COLLECTOR TO
EMITTER VOLTAGE

1. NORMALIZED LIGHT
CURRENT VS. COLLECTOR TO
EMITTER VOLTAGE

3.

DARK CURRENT

VS.

TEMPERATURE
to

Si

Sj

u<

2^

-*-T
52

^ a_
9

&

OS

"

'

>
t

-90 -80 -70 -60 -50 -40 -30 -20

V CE

-10
10
20
S- INCIDENT ANGLE-DEGREES

5V

H**2mW/cm z

5.

RELATIVE RESPONSE

VS.

40

30

50

60

70

80

90

o.e

or

o.

X-WAVELENCTH-MICftONS

INCIDENT ANGLE

6.

SPECTRAL RESPONSE CURVE

IU
1

W
1

'

50

75

+6V

T- TEMPERATURE -*C

4.

RELATIVE LIGHT CURRENT

AMBIENT TEMPERATURE

VS.

IK

2N5777-80

r~

LOAD RESISTANCE

0-

NORMALIZED TO
R t =ioo

lOOft

0.1
L

V
II

> >11

v- IOV

0.8

0.4

RELATIVE SWITCHING SPEED

7.

LIGHT CURRENT VS.

RELATIVE SWITCHING SPEED

t -

TIME

1.2

16

2.0

m$c

TRANSIENT RESPONSE
WITH RESISTIVE BIASING

8.

509

TRANSIENT RESPONSE
WITH CASCODE BIASING

9.

2N5810-6017 SERIES SEE GES5810-601;

Silicon

Programmable
Unijunction
Transistor

D13T SERIES

2N6027,8

(PUT)

The General Electric PUT is a three-terminal planar passivated PNPN device in the standard
low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.

plastic

The 2N6027 and 2N6028 have been characterized as Programmable Unijunction Transistors
(PUT), offering many advantages over conventional unijunction transistors. The designer can
select R.! and R2 to program unijunction characteristics such as r\, R BB Ip an d Iv to meet his
>

particular needs.

The 2N6028 is specifically characterized for long interval timers and other applications
low leakage and low peak point current. The 2N6027 has been characterized for
general use where the low peak point current of the 2N6028 is not essential. Applications of
the 2N6027 include timers, high gain phase control circuits and relaxation oscillators.
requiring

10 Outstanding Features of the PUT:

1

2.
3.

4.
5.

6.
7.
8.

9.

10.

Applications:

Planar Passivated Structure

SCR Trigger

Low Leakage Current

Low Peak Point Current
Low Forward Voltage

Pulse and
SYMBOL
A

Oscillators

High Energy Trigger Pulse

Programmable 17
Programmable R BB
Programmable Ip
Programmable Iy

Circuits

PUT

MIN.

INCHES
MAX.
.265

.016

*t>

165

.Old
.205

.no
099

.155
.105

.045
.500

.055

02

MILLIMETERS
MAX.

MIN.

4.32
.406

6.73

4.19

5.21

2.79
2.41

3.94
2 67

1.14

1.40

.463

12.70

1.90

.075
.060

115

2 05

2.92

LEAD DIAMETER IS CONTROLLED IN THE

ZONE BETWEEN .070 AND 230 FROM THE SEATING
PLANE. BETWEEN .250 AND END OF LEAD A MAX
OF .02. IS HELO-

NOTE

Cost

Operation of the

.170

*b2

Sensing Circuits

Sweep

"5EATINC PLANE

Timing Circuits

Fast,

Low

_ ^bi HOT

t:

unijunction is easily understood. Figure 1(a) shows a basic unijunction circuit. Figure 2(a) shows
except that the unijunction transistor is replaced by the PUT plus resistors R t and R 2 Comparing the
equivalent circuits of Figure 1(b) and 2(b), it is seen that both circuits have a diode connected to a voltage divider. When this diode
becomes forward biased in the unijunction transistor, R 1 becomes strongly modulated to a lower resistance value. This generates a

identically the

same

as a

circuit

E and base one (B t )- For the PUT, the resistors R x and R 2 control the
becomes forward biased. After the diode conducts, the regeneration inherent in a PNPN
device causes the PUT to switch on. This generates a negative resistance characteristic from anode to cathode (Figure 2(b))
simulating the modulation of Rj for a conventional unijunction.
negative resistance characteristic between the emitter

voltage at which the diode (anode to gate)

Resistors R B2 and R B1 (Figure 1(a)) are generally unnecessary when the PUT replaces a conventional UJT. This is illustrated in
Figure 2(c). Resistor R B1 is often used to bypass the interbase current of the unijunction which would otherwise trigger the SCR.
Since R x in the case of the PUT, can be returned directly to ground there is not current to bypass at the SCR gate. Resistor R B2 is

used for temperature compensation and for limiting the dissipation in the
not modulated, R B2 can be absorbed into it.

UJT

during capacitor discharge. Since

R2

(Figure 2)

is

"B2|

'AG

? R 2\

~~$*'

^4

;c

?*'

1(a) Typical Circuit

Kb) UJT

1(c) Negative

Equivalent

Resistance

Circuit

Characteristic

2(a)

PUT

UJT

in

Replacing
Typical

Circuit 1(a)

2(b)

Unijunction Transistor

Figure 2

510

PUT

2(c) Simplified Typical

Circuit 1(a)

Circuit

Using
Figure

UJT

Equivalent

PUT

Equivalent of

UJT

absolute

maximum

ratings: (25C)

Voltage

*Gate-Cathode Forward Voltage

*Gate-Cathode Reverse Voltage
*Gate-Anode Reverse Voltage
* Anode-Cathode Voltage

+40

-5 V
+40
+40

V
V

150

mA

Current

*DC Anode Currentf

Peak Anode, Recurrent Forward
(100 //sec pulse width, 1% duty cycle)
*(20 jusec pulse width, 1% duty cycle)
Peak Anode, Non- recurrent Forward
(10 Msec)
*Gate Current

A
A

20

mA

Capacitive Discharge Energyft

250

juJ

Power
Total Average Powerf

300

mW

Temperature

Operating Ambientf
Temperature Range

-5 0C

to

+ 1 00

f Derate currents and powers 1%/C above 25C

2
tfE = Vi CV capacitor discharge energy with no current limiting

electrical characteristics: (25C)

(unless otherwise specified)

2N6028

2N6027
Fig.

Peak

Current (V s =

Volts)

(D13T1)
Max.
Min.

No.
3

IF

(Rg = 1 Meg)
(R G = 10k)
Offset Voltage (V s = 10 Volts)
(Rg = 1 Meg)
(R G = 10k)

Valley Current (V s = 10 Volts)

(Rg = 1 Meg)
(R G = 10k)
(R G = 200 SI)

Gate to Cathode Leakage Current

(V s = 40 Volts, Anode-cathode short)

= 50

mA)

1.0

1.6

.6

.6

.6

MA

mA

tr

nA
nA

100

10
100

100

lOOnA

10

1.5

Sfy nJ

-v.

Figure

25juA
1.0

Igks

Pulse Voltage Rate of Rise

Volts
Volts

1.5

VF
Vo

nA
nA

25

Igao

Pulse Output Voltage

*JEDEC

.15

70

(T = 75C)

(Ip

50

Anode Gate- Anode Leakage Current

*(V S = 40 Volts, T = 25C)

Forward Voltage

(D13T2)
Max.

Min.

1 .5

Igks

Volts
Volts

80

registered data

>+20 VOLTS

6V-

27k
.6V

Figure 6

511

80

nsecs.

Figure 5

D13T SERIES
2N6027, 8
10

-f- -Htt
1

mil
i -H-Httt=

iiiiii

VALLEY CURRENT
SATE"ON STATE" CURRENT
GATE TO CATHODE ASSUMED SHORT

PROGRAMMABLE UNIJUNCTION

rsPK mi

;!N6027

'
j

iPEC

MAX

SPEC MAX 2N6027

^ 2N602 8

0.1

i1

SP^C MAX 2N602rfff

SPf

^
*0

ISPEC MIN 2N6027

H?= ^
SP

PEAK CUd
ASA FUNCTION

r-|
f

328

ini*

F
.01

FOR

13

_ V, =

IO

_l

TTT

- TRANSIST<

II

III Ul

nni

IO

O.I

GATE SOURCE IMPEDENCE

OHMS

IN

p vs Gate Source Impedance

^^^
VS

VOLTS

IO

IO

*" ps '
Is v,/Rg im "- li

THOUSANDSI

(IN

v vs

Gate "on state" Current

V8 -I0 VOLTS

RG

10k

~.-^

RG

* X> otl

R G *IOk

R G "IOO

^^R
?.

G "I "E<S

o.i

H 5"

'

-75

-25

MEG

25

-50

50

-25

25
50
AMBIENT TEMPERATURE-*C

AMBIENT TEMPERATURE-*C
lp vs

Temperature and

Rq

v vs

Temperature and Rq

"G'
\\

MEG

VS "IO VOLTS

Kg-

UOOk

R G -IOk

-25

O
25
50
AMBIENT TEMPERATURE-'C

Vy

vs

Temperature and

20

V-VOLTAGE-VOLTS

Rq

Peak Output Voltage

512

30

75

100

D13T SERIES
2N6027, 8

APPLICATIONS
MEG

1.8

2N5I72

TYPICAL UNIJUNCTION CIRCUIT

CONFIGURATIONS

PUT

MEG

PUT

MEG

100k

Here are four ways to use the PUT as a unijunction.

Note the flexibility due to "programmability." Appli-

LOW

VERY HIGH

cations from long time interval latching timers to

wide range relaxation

Ip
I

LOW

Ip,

LOW

Iv

TEMPERATURE
AND V BB COMPENSATION

oscillators are possible.

1.8k

"E"+V,

PUT

PUT
2.7k

LOW

2.7k

LOW Ip, MEDIUM I v

TEMPERATURE

Ip, MEDIUM I v

COMPENSATION
VA G

HOUR TIME DELAY

SAMPLING CIRCUIT

+ 28V

This sampling circuit lowers the effective peak current

of

capacitor

the

output

to

charge

PUT, Q2. By allowing the

with high gate voltage and

when Ql

periodically lowering gate voltage,

fires,

the

200

timing resistor can be a value which supplies a much

lower current than Ip. The triggering requirement
here is that minimum charge to trigger flow through
the

,, PULSE
100 OUTPUT

5/lF:

(GE74FOIB-505)

timing resistor during the period of the Ql

This is not capacitor size dependent, only

(GE74F0IB-505)

oscillator.

capacitor leakage and stability dependent.

I
1

SECOND, 1kHz OSCILLATOR

handy circuit which operates as an oscillator

The 2N6028 is normally on due to
excess holding current through the 100 kohm resistor. When the switch is momentarily closed, the 10
Here

and

is

is

charged to a

starts oscillating (1.8

latches

MOOk

timer.

juF capacitor

when 2N2926

full

5 volts

IS

?l.8

MEG

>220k

10/iF.

GE76F02FCIO0

'

2N2926

and 2N6028

Meg and 820 pF). The circuit

down again.

INITIATE

zener breaks

820pF

V.

513

,s

'220k

Complementary
2N6114
Unijunction Transistor

2N6115
2N6218-24 SEE GES6218-24

COMPLEMENTARY UNIJUNCTION
The General Electric

Complementary Unijunction Transistor is a silicon

integrated circuit. It has unijunction characteristics with
superior stability, a much tighter intrinsic-standoff ratio distribution and lower
saturation voltage.
planar,

monolithic

absolute

maximum

ratings:

(25

free

air)

Voltage

V
V

30

Interbase Voltage
Emitter Base 2 Voltage

8.0

Current (Note 2)

150
2
15

Average Emitter (Forward)

*Peak Emitter (Forward) (Note
Peak Reverse Emitter

1)

DIMENSIONS WITHIN
JEDEC OUTLINE T0-I8
EXCEPT FOR

mA

LEAD CONFIGURATION

mA

Power

300

'Average Total (Note 2)

mW

-55 to +150 C
-55 to +200 C

Operating
Storage

Hectrical characteristics:

(25

free

air)

Min.
* Intrinsic Standoff Ratio (Note 3)

0.58

Typ.

Max.

0.60

0.62

For capacitor discharge,

limiting

* Peak Point Voltage

vP
vr

(V BB = 5V)
(V BR = 10V)

3.2

3.45

3.7

6.1

6.45

6.8

RbBO
Rbbo

5.5

6.8

8.2

Vebio

8.0

than 5

Volts
Volts

(Ibb
Emitter

2N6114
2N6115

Breakdown Voltage

= 1<VA)

(Iebi

15

5.0

*Peak Point Current

(V BB = 10V)

2N6115

(V BB = 10V)

Ir
Ir

flA

15

^A

2N6114
2N6115

= 5V)

= 50mA, Vb = 10V)

Iebio
Iebio

0.1

VE(sat)

1.1

100

nA
nA

1.5

Volts

10

Modulated Interbase Current

= 50mA, V = 10V)

*Peak Pulse Voltage

(Note 4)
Diode Voltage Drop
(Note 3)
Minimum Charge to Trigger

(Vb

ll!2(mo(il

vD

= 10V)

,:t

1.0

3.5

4.5

.30

.45

Volts
.60

intrinsic-standoff ratio

C =

_
~

Vi..

v,

Where:

*JEDEC

R B2 =

is

It

and the

V,.,

V,

v = v

>'=

V nB = 10V .001V
V 11M = 5V .001V
i

The Base-One Peak Pulse Voltage is

measured in the circuit shown in Figure
This specification is used to insure a
minimum pulse amplitude for
applications in SCR firing circuits
other types of firing circuits.

and

Volts

10

tree

^\

M ..**v<Ui

1,

V s = 12.5V)
-15Cto + 65C
-55Cto +150C

0.1/xF,

(?))

associated diode drop of peak point

voltage are defined by the equations

Relaxation Oscillator Frequency Shift from

25c Value (See Figure

cases

all

required for

50

Qt

Turn-on Time (See Figure 7)

Recovery Time (See Figure 7)

10

mA

is

essentially constant with temperature

'

Emitter Saturation Voltage

(I E

The

mA

Iv

Emitter Reverse Current

(I E

ohms

and interbase voltage.

2N6114

Valley Point Current

(Vebi

of 15

good temperature stability.)

Derate power and currents linearly to
zero at maximum operating temperature

kohms
kohms
Volts

9.5

and recommended for

(A minimum

InterBase Resistance

= 0.1mA)

/F

resistor current

required for capacitors greatei

is

950O,

registered data

514

0.2

0.6

0.4

1.0

%
%

TEST CIRCUIT
*COJT ONLY SUBJECTED TO
TEMPERATURE CHAMUE
ALL RESISTORS IX

FIGURE

FIGURE 2

~~^-

eWTTCR
VOLTMC

FIGURE 6

'

wewnve
SJSTANCI

KQtON
CM POINT

2N6114

Static Emitter Characteristics

curves showing important

FIGURE 4

-it 9

ONE OIOOE

2N6115

CMAHiCTtlllSTIC

(ALLEY MMNT \ *

*r

FIGURE 5

^S

VBB -ISVOL T*

details).

)/

V*

parameters and measurement

points (exaggerated to show

/S

GURE

CMlTTCR TO U3E-

\Vu-IOV

VOLTS

OSCILLATION FMEOUENCY -

"U -#- -@T^

FIGURE 7

Complementary Unijunction Transymbol with nomenclature

sistor
used for voltage and currents.

m .iowj.ts
HZ

TYPICAL CHARACTERISTICS
1

PEAK POINT CHARACTERISTICS

_J

o
>

BB

>

CHARACTERS TICS
TA = + 25-C

EMIT TER

ric
kSTA

=I4V

R BB VS

TEMR

CD

<
-

_l

O
>

_i

z
<

UJ

ID

<

UJI.4

7 5

a.

1-2

<E

i-

- V BB
<~ V BB

>" 2

UJ
11-

I0V

BB=

5V
=

.10

('.J

V =I2V
BB

2V _

^IB 2 "0

UJ

>

UJ

10

12

14

16

7.2

20

18

I E -EMITTER CURRENT-mA

10

-40-20
20 40 60 80 100 120 140
TA -AMBIENT TEMR DEGREES CENTIGRADE

14

12

I E -EMITTER CURRENT-juA

-^

"

N.

^B'

i/OLTS

.6

DIODE DROP VS TEMPERATURE

to

I,

.5

o
Q

a
o
a

\~

.4

.3

"^

*P

.2

--

>"

-10

30 " 50
70
90
-AMBIENT TEMPERATURE-'C

+10
T.

110

130

150
'

-A

-f

TA

K3
so
eo
2O
- AMBIENT TEMPERATURE

too

20

'

---

rT_^_

S TATIC

--!

INTER BASE CHARA CTERISTICS

'

VS

10

TEMPERATUR

E-

VOLTAGE

--

(T A =25 C)

>

,
--

20i

30/

<

/
/,

VS

t-

=:

/v EBI

>

VI

<

a:

.--

2
I P- __

5V

^zr

/50/

4
1

CO

>

.1

"-j-^

NC TE'

-_^DI0DE OR RESISTIVE
EMITTER PROTECTS

^~"

THIS VOLTAGE
1

)l
1

INTERSTATE VOLTAGE -VOLTS

+ 50

-BASE TWO CURRENT-mA

515

TA -AMBIENT

+100

+150

TEMPERATURE -C

+200

Silicon

Control Switch

3N81.2

PLANAR PNPN

silicon controlled switches (SCS) offerElectric Types 3N81 and 3N82 are
ing outstanding circuit design flixibility by providing leads to all four semiconductor regions. Unique fabrication processes based on planar oxide passivation have resulted in high reliability and uniformity at low
cost. The SCS is thoroughly characterized at temperature extremes to permit worst-case circuit design.

The General

PNP-NPN transistor pair in a positive feedback

configuration. As such they offer fewer connections, fewer parts, lower cost and better characterization
than are available from two separte transistors. Their characterization permits them to be used as an extremely sensitive SCR, as a complementary SCR, or as a "transistor" with "latching" capabilities.
Types 3N81 and 3N82 can be considered an integrated

FEATURES:
Completely eliminates rate effect problems
Dynamic and static breakover voltages are identical
Extremely high triggering sensitivity
Design parameters specified at worst-case temperatures
Characterized for SCR and complementary SCR type applications
Characterized as PNPN and also as transistor integrated pair

DIMENSIONS WITHIN
JEDEC OUTLINE T0-I8
EXCEPT FOR
LEAD CONFIGURATION

AH planar, completely oxide passivated

Leads to all four semiconductor regions

maximum

absolute

ratings:"

(25C)

(unless otherwise specified)

3N81 3N82

max. of .021

Voltage

Anode to cathode forward and reverse

Anode gate to anode reverse
Cathode gate

to cathode reverse

65
65

100
100

1: Lead diameter is controlled in the

zone between .050 and .250 from the seating plane. Between .250 and end of lead a

NOTE

volts
volts
volts

is

2:

(.019}

measured

held.

Leads having maximum diameter

.001
in gaging plane .054

MOTE

.000 below the seating plane of the device

be within .007 of true position rela-

shall

tive to a

maximum width

NOTE

Measured from max. diameter

3:

tab.
of

the actual device.

Total Current

Continuous

DC

forward' 2

'

Peak recurrent forward (T A

pulse width,

1%

100C, 100

ma

200

200

1.0

1.0

amps

5.0

5.0

amps

/*sec.

duty cycle)

PNP EMlTTERo 4

Peak non-recurrent forward

(10 usee, pulse width)
Gate Current (Forward

PNP BASE
NPN
COLLECTOR
COLLECTOR
NPN BASE

Bias)

Continuous DC anode gate

Peak anode gate (T A = 100C, 100 ^sec.
pulse width, 1% duty cycle)
Peak cathode gate (Ta = 100C, 100 ^sec.
pulse width, 1% duty cycle)
Continuous DC cathode gate

100' 2

ma

100'-'

'

NPN EMITTER

CONNECTI
(A104 ANODE

200

200

ma

500
20

500
20

ma
ma

400
100

400
100

mw
mw

+150
+200

C
c

Dissipation
2'

Total power'
Cathode gate power' 2

'

CATHOOE
GATE

y_(V

-Y

INTERNftl

AN0DE

V^ ^/
IClii

TO CASE
.046

" TE
.048
.028

CATHODE

(NOTE

It

Temperature

-65
-65

Operating junction
Storage

NOTE
NOTE

2:

to
to

Symbols and nomenclature are denned below.

Derate currents and power linearly to 150C, the maximum rated temperature. The absolute
terms of the more conservative of the two parameters, i.e. current or power.

definition of terms
PNPN devices available at

used

in

maximum

rating at any given temperature shall be in

scs specifications

present do not have a

common

characteristics and gate triggering char

The anode forward

nomenclature. In part, this is due to their different construction and varied applications. SCS nomenclature permits the
reverse characteristics of all three junctions to be specified.

acteristics can also be specified fully. The principles used in

assigning symbols are illustrated below, and with outline

drawing above.

4 I F (FORWARD)
REVERSE CHARACTERISTICS

>

Il H (HOLDING)
G4 C

V R (REVERSE)

V^TBLOCKtNG)
l/PfBLOCI

VB(J (BREAKOVER)

>
>

GC C

In

ANOOE

NEGATIVE

ANODE
POSITIVE

F I

-VfV

V GC

Ioc

"Vgtc

x gtc

r-Tti=
REVERSE VOLTAGE AT GATE
( CATHODE GATE)
NOTE:

-ABSENCE OF

G INDENTIFIES ANODE TO CATHODE

SYMBOLS. DOT IDENTIFIES OPERATING POINT.
BRACKETS INDICATE MEANING OF SU8SCRIPT LETTER.
1

0A

IB

FIG.

FORWARD CHARACTERISTICS

V B0S (STATIC)

VB0[) (DYNAMIC)

ANODE TO CATHODE CHARACTERISTICS

[

FIG.

516

VOLTAGE AT GATE TO TRIGGER

GATE)
( CATHODE

cr

G IDENTIFIES GATE SYMBOLS. LAST LETTER

(A OR
MAY BE DROPPED IF NO AMBIGUITY
RESULTS IN SPECIFIC CHARACTERIZATION. F
MEANS "FORWARD" AND T MEANS "TRIGGER"

3N81, 2

SCS CHARACTERIZATION
electrical characteristics
CUTOFF CHARACTERISTICS

Typical Curves

(Roc

V AC

10K,

10K, Vca

max

III

Rated Voltage)

Cathode Gate Reverse Cutoff Current (at Rated Voltage)

Anode Gate Reverse Cutoff Current (at Rated Voltage)

Igc
IOA

CONDUCTING CHARACTERISTICS
Forward Voltage
(at 200 ma

VP

Anode current R l:c

Holding Current

(Roc

[h

10K)

Saturation Voltage

(G A

to C)

(Igc

5ma,

I GA

50ma,

I4

VCEs;it NI'N

Fig.

max
fia max
/xa max
/ta max
,ua max
Ma max

1.0

,ua

20
1.0

20
20
1.0

@ 25C
@ 65C
@ 25C
@ -65C
@ 25C

m .

10K)

3N82

3N81

@ 25C
@ 150C
@ 25C
@ 150C
@ 25C
@ 25C

1b max

Rated Voltage)

Reverse Blocking Current

(Roc

Temp.

Symbol"'

Forward Blocking Current

2.0
2.5

2.0
2.5

V max
V max

1.5
6.0

1.5
6.0

2.0

2.0

ma max
ma max
V max

1.0

1.0

fia

50

50

Ma

.65
1.0

.65
1.0

0)

14

20

15, 16
11, 12, 13

22, 23, 25

TRIGGERING CHARACTERISTICS
Cathode Gate Current

to Trigger

from current source, Vac

(Igto

Cathode Gate Voltage to Trigger

(V A c
40V, R A
800O, Roc
Igtc from current source)

800O)

R GA =

10K,

VGTC max
<*>,

VGTC min

Anode Gate Current to Trigger (Iota from current source,

Vac = 40V, R c = 800Q, Roc 10K)
Anode Gate Voltage to Trigger
(Iota from current source,
Vac _ 40V, R c
800n, Rgc
10K, R 0A = IK)

@ 25C
@ -65C
@ 25C
@ -65C
@ 25C
@ 150C
@ 25C
@ -65C
@25C
@ -65C
@ 25C
@ 150C

Igtc max

R =

40V,

Iota max
VgT.A max

VGTA min

TRANSIENT CHARACTERISTICS

Turn-On Time (Vac

20V, I A
100 ma, I GC
(See circuits Pig. 9 and 10)
Recovery Time (Vac
20V, I A
lOOma, Roc
(See circuit Fig. 17)
Collector Capacitance

Voltage Gate to Gate

100

/is.)

t,n max

10K)

tree max

20V

C m

Rate of Rise of Forward Blocking Voltage

NOTE
NOTE

dv/dt

max

@ 25C
@ -65C
@ 25C
@ 150C
@ 25C
@ 25C

The

transistor characterization is essentially a restatement of the

SCS characterization and is meant to facilitate using the SCS as
a complementary PNP-NPN integrated transistor pair
4: The [] sign indicates that the PNP and
transistors re3:

NOTE 5

0.4

0.4

0.15

0.15

1.0
3.0

1.0
3.0

0.8
1.0

0.8
1.0

0.4
0.2

0.4
0.2

1.5
2.0

1.5
2.0

max
max
V max
V max

4
5

V min
V min
ma max
ma max
V max
V max
V min
V min
MS
MS
MS
MS
pf

15
15
25
25
15
15
See Note 5

max
max
max
max

7,8
18, 19

26

V/ms max

quire opposite polarites as identified by the test conditions.

The dv/dt rating is unlimited when the anode gate lead is returned
to the anode voltage through a current limiting resistor. An example of this technique is shown in Figure 3 3

NPN

TRANSISTOR CHARACTERIZATION
electrical characteristics:

(25C)

(unless otherwise specified)

Collector to Base

PNP'
Min.
Max.

Breakdown Voltage

BV C

65

= 20M a, I [PNP] = -l M a)
50ma, Ib = 5m a)
Base Saturation Voltage (I B = lma, Ic = 5ma)
Forward Current Transfer Ratio V Ce = 0.5V, Ic 3ma)

BV E

-65

(Ic= [] H>

l-O^a, I E

0)
Emitter to Base Breakdown Voltage

He =

0, I E

3N82

3N81

DC CHARACTERISTICS

[NPN]

NPN'
Min.
Max.
65

PNP'
Min.

Max.

100

Typical

NPN'
Max.
100
volts

-100

0.9

15

Forward Current Transfer Ratio

(Vce

-2.0V,

Ic

= -lma)

volts

0.9

volts

15

o.i

Fig.

22, 23, 25

21

0.1

24

CUTOFF CHARACTERISTICS
(3N81 at 65

volts;

3N82

at 100 volts)

Collector to Emitter Leakage Current

(Rb

(T A

150C)

10K !1Ta= 150C)

Collector to Base

leakage Current (I B

Emitter to Base Leakage Current (Ic

5Vdc, Ic
(Veb
0)

T A 150"C)
T A = 150C)

0,

0,

-20

IcEO
ICER

20
20

-20

Ic

-20

Iebo
Iebo

-20

Ma

-20

20 Ma
20 Ma

-20

fia

20

20

fia

TRANSIENT CHARACTERISTICS
Collector Capacitance

(I E

Gain Bandwidth Product

0,

Vcb

[]

20V)

15

15
75

fT

517

volts

Collector Saturation Voltage (Ic

V.
hF

Curves

Min.

15

15 pf
75

mc

26

3N81.2

turn-on time
I*' iOOMA

Ia" IOMA

I SA

3MA
K)KB

CONNECT POWER
SUPPLY BEFORE
INPUT PULSE

+75
+26
+50
AMBIENT TMPERATURE-.T4 ~*C

+100

+125

TURN ON TIME TEST SET

TURN ON BY ANOOE GATE

+150

FIG.

FIG.

U_

IOMA

U IOOMA
Igc

+78
+60
AMBIENT TEMPERATURE- V'C
+

PIG.

26

+K)0

.IMA

+150

+126

TURN ON TIME TEST SET

-50

-75

-25

+50

+25

+78

+100

+150

+125

FIG. lO

AMBIENT TEMPEfiATMR E-TA -*C

;

FIG.

5.0

'*^*wc' oa
8

'

.5

SPECIFICATION LIMIT
{R flc '!OK)

f-

^
SPECIF CATION
l oa

LIMIT

50MA

-^"" oo
1

1.0

^Rac-ma

J
at

0.5

.06

3
5
O

*^

-I0MA

02

fi

9C

'

KO

i
.02

.01

i
-

Ifli-OMA

0.1

^^Jec -K3KH

\Roc' lOKfl

w .RATED

'V

.OS

VOLTAGE

.OOZ

.001

Roc

tOKfl

.0005
.02

.0002

-85

+25

+ 75

+125

+25
* 125
+75
AM8IENT TEMPERATURE -TA -"C

-75

+1T5

-25

AMBIENT TEMPERATUHE-TA --C

PIG.

11

.OOOI

+'75

-73

-25

+25

+75

AMBIENT TEMPERATURE

+125
- T
A

-75

+175

+75

+126

+175

AMBIENT TEMPERATURE -T-"C

FIG. 14

PIG. 13

FIG. 12

+ 25

-26

*C

SPECIFICATION LIMIT
2.0V AT I 4 '200MA

WITH Ioft-0

j*

Ia"C OMA
I

SOMA-

/W

forward
characteristics
I.-W

-75

-50

-26

+25.

+60

+75

+100

+125

+190

AMBIENT TEMPERATURE -T-'C

40

60

80

100

120

ANODE CURRENT- A -MA

FIG. 16

FIG. IS

518

WO

160

ZOO

3N81,2

reverse
characteristics

JA

o*a

OMA

^
O
+50
+25
AMBIENT TEMPERATURE

RECOVERY TEST SET

+75
- T. -

IKQ__^-

OQ

+ I25

+I00

+ I50

FIG. 18

.05

-02

.01

a:

005

S>

.002

.001

/
/

.0005

.0002

+25
+125
+75
AMBIENT TEMPERATURE-T.-'C

-75
AMBIENT

-25

TEMPERATI

FIG.

FIG. 19

+175

20

triggering characteristics
\_

Isc'OQ

--SPECIF
.-IMIT(

.7

5C-KW)

<
.5

t^c-iKa

i
.2

\
\\

.>

U
3

.6

k\

a:

.5

Rl* woo

v-

\\

-25

+25
+75
TEMPERATURE

AMBIENT

FIG.

+188

+179

*H
Vc'

-75

-50

FIG.

'

ov\

-25

+25
AhffllCNT

-V*C

40V

tOKB
1

\\

Rac'IOKa

-75

>5

+50

+75

+IOO

+125

+t50

-50

-75

FIG.

519

-2B

+25

+50

+78

AMBCNT T*HeHATUe-VC

TEMPERATURE -T->C

+100

+189

+ttt>

3N81,2
;':->a

04

\vfc --zv

FIG. 21
.

tor

.8

SPECIF CATfQN
LINf:

-iO

-!M>

.0

J3

COUECTCH* CURRENT -J^-ltt

.:..;:.:
:

24

PIG.
S

9
">
I-

3 C "50*
I 8 '5Mf

jf

/\

i
|
:S

,'

1.0

OMA

y/

';:':,-.

SOMA
SKA

"a"

lOMA^^

*/-tl-P:-

X ':

I.|QOi*A

-BO

-T3

-25

+ 2S

AMBlEKt TEMPERATURE- V*G

FIG.

22
AMSfENT TEMPERATURE -V"G

.26.

** 5MA

>

/
I

I, -lOMft

to

S .JA,

I..0

g
j

+25

+?S

+50

+100

+(25

+150

IS

AKWEMT TEMTORATU(te-V*C

PIO.

COLLECTOR TO BASE VOLTAGE

PIG

23

20
- ^a,- VOLTS

26

APPLICATIONS
ALTERNATE,
INPUT

RATING

LAMP

VOLTS

SEC.

VOLTSWHS
T2

AMPS

scs

Tl*

24

24

,035

3NSI

34

24

327

28

.04

3N8I

40

28

330
344

14

.OS

3N8I

20

10

.015

3N8I

14

10

40

28

1829

28

.0?

3N8I

OON_ATOV
QFFAT-6V

RECTIFER PREVENTS
2""
AC FEEDBACK I"

14

WCHEMEO VOLTMESVtS NORMAL BBISHTNjESS IN tMLF

mm. ciscut

INCANDESCENT LAMP DRIVERS

520

PIG.

27

28

30

Silicon

Controlled Switch

PLANAR PNPN

The General

Electric Type 3N83 is

switch with separate leads provided to each of its
four semiconductor regions to form the equivalent of an integrated PNP-NPN complementary
transistor
pair. It has been characterized as a low-cost, latching-type driver for Nixie tubes,
alphanumeric display
tubes and neon lamps. As such, it is ideally suited for very simple counter circuitry and applicatins

DIMENSIONS WITHIN
JEDEC OUTLINE TO-18

requiring gate turn-off as well as gate turn-on. Special features of the 3N83 neon driver include its ability
to operate independently of the changes in ionization and deionization time of the lamp and its total freedom
from inadvertant triggering caused by line transients (dv/dt).

The 3N83

housed

a four-leaded

TO- 18

package. All junctions are completely oxide passivated

maximum long term reliability. Other PNPN devices in this series provide characterization
suitable for a wide variety of switching functions and are described in General Electric Publications
65 16
65.18 and 65.19.
is

in

size

to provide

'

'

NOTE 1: Lead diameter is controlled io the

zone between .050 and .250 from the seating plane.

Between .250 and end of lead a

max. of .021

NOTE

2:

is

field.

Leads having

maximum diameter

measured in gaging plane .054 + ,001

.000 below the seating plane of the device

(.019)

shall

Features:

\-'M~\

EXCEPT FOR
LEAD CONFIGURATION

be within .007 of true position

rela-

tive to a

maximum width

NOTE

Measured from max. diameter of

3:

.500

tab.

MIN

the actual device.

PNP EMITTER

Latching driver for neon lamps

Design parameters specified at worst-case temperatures
Gate turn-on and turn-off
Eliminates lamp ionization and deionization-time problems
All planar, completely oxide passivated

TO-18

(NOTE

I)

CONNECTED
INTERNALLY
TO CASE

size

.046
.036

ALL DIMEN.IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

PNPN NEON DRIVER CHARACTERIZATION

THEORY OF OPERATION
PNPN device as an integrated circuit in which
an NPN transistor drives the lamp load and a PNP transistor
provides the NPN with latching characteristics results in a
Considering a

family of outstanding driver

Figure 1 compares the

of a PNPN.

emitter current to guarantee this is denned

as the holding current (Ih).
To turn off the 3N83 it is only necessary to interrupt the
PNP emitter current momentarily. This removes the
base drive allowing the collector to rise to the lamp extinction voltage reverse biasing the PNP. The 3N83 is also characterized to turn off by a negative pulse at the
base.
This is equivalent to gate turn-off of an SCR. The negative
pulse diverts all the PNP collector current to reverse bias the
thus turning off the driver.
The advantages of this circuit include (a) latching characteristics (b) no rate effect problems because the PNP emitter
is normally reverse biased (c) spikes and ripple on either
power supply will not turn on the driver accidentally (d)
turn-off is readily achieved in the low voltage, low power
PNP emitter or
base circuits (e) lamp ionization and
deionization characteristics do not affect the circuit (f) dissipation is low since I H is generated from a low voltage supply
and (g) the circuit is low cost.

circuits.

SCR and

NPN

integrated circuit symbols

Figure 2 illustrates operation in a typical

assume the

minimum PNP

NPN

NPN

circuit. Initially,

transistor is reverse biased. Its collector

voltage (pin 3) will be at the collector supply voltage minus
the lamp extinction voltage. Typically this will be 50 volts,
which reverse biases the PNP transistor. The lamp is extinquished.

Applying a positive trigger pulse saturates the

NPN

NPN

transistor lowering its collector voltage within 1.0 volt of ground.

This forward biases the
transistor turning it on and
supplying additional base drive to the
transistor. The
3N83 is characterized so that the
transistor remains
saturated even after the triggering input is removed. The

PNP

NPN

NPN
NPN

PNPN

PIO.

SCR OR SCS

DETERMINES
ALTERNATE

i ?1
* ' *

I.(NPN)

TRANSISTOR
EQUIVALENT

PNPN NEON DRIVER

PIO.

521

IOO

OR +ITOV

3N83

absolute

maximum

ratings:

(25C)

(unless otherwise noted)

PNP

Voltages

Collector to Emitter
Collector to Base

(R

Emitter to Base

NPN

-70
-70
-70

V OEK
V CBO

10K)

Vebo

70
70
5

volts
volts
volts

Emitter Current

Continuous DC
Peak Recurrent (T A = 100C, 100 .usee, pulse width,
Peak Non-Recurrent (10 ,usee. pulse width)
2

Collector Current

50

-50

ma

Ie(PEAK)
Ie(PEAK)

0.1
0.5

-0.1
-0.5

amp
amp

Ic
ICU'EAK)

-10
-50

25
50

ma
ma

Pt

200

200

mw

Tj

-55
65

Ie

1%

duty cycle)

Continuous

DC

Peak Recurrent (T A

100C, 100

/isec.

pulse width, \ CU duty cycle)

Dissipation

Total Power 2
Temperature

Operating Junction
Storage

T.STC,

electrical characteristics:

(25C)

PNP
Min.

Collector to Emitter

B V CEO

Ie

[PNP]

-l,ia)

B VcBO
B V BBO

= 70 Vdc, Ta = 125C)
- 125C)
Vcb = [Y 70 Vdc, Ie 0, Ta = 125C)
Veb = 70 Vdc, Ic = 0, T A = 125C)

Collector to Base

Leakage Current
Emitter to Base Leakage Current (
5 Vdc, Ic
(Veb
0)

Q,

TA

COMBINED DEVICE CHARACTERISTICS

Collector Capacitance 6

Forward Voltage (I K

= 0, Vcb
ma)
T A = -55C)
(I E

20 Vdc)

50 ma,
(Ie
Holding Current (See test circuit below)
Current to Trigger (See test circuit below)
Voltage to Trigger (See test circuit below,

5
1.2

VBE(SAT)

0.9

15

-20

IcEO
IcER
lCBO
Iebo
Iebo

iia

iia

Max.

Co

20

Ve

1.4
1.9

volts
volts

4.0

ma

Ih

Vtrigger

P'

150

V TRIGGER

(See test circuit below, T A = 125C)

Turn-On Time (See test circuit below, Ib [NPN] = 0.4 ma)
during recovery)
Turn-Off Time (See test circuit below, V E =
(See test circuit below, T A = 125C)

jxa

fia

20

Itriggek

= 55C)

tia

20
20

-20
-20

vr

TA

volts
volts
volts
volts
volts
volts

0.1

Min.

50

VcECSAT)"*

iIfe

(Vce

R B = 10K

70 Vdc,

C
C

Max.

70
70

-70
-70

CUTOFF CHARACTERISTICS

Min.

-70

h.FE

(V 0E

NPN

Max.

BVcEH

= [] 0.1 tia, Ie = 0)
0, Ie [NPN] = 20 /ta,
Collector Saturation Voltage (Ic = 25 ma, Ib 2.5 ma)
Base Saturation Voltage (Ib = 1 ma, Ic = 5 ma)
Forward Current Transfer Ratio Vce = 0.5 V, Ic = 3 ma)
(Vce = -2.0V, Ic = 1.0 ma)
Collector to Emitter Leakage Current

+125
+200

(unless otherwise specified)

DC CHARACTERISTICS
Breakdown Voltage
0.1 na)
(Ic
10 K O)
(Ic = 0.1 /xa, R
Collector to Base Breakdown Voltage (I c
Emitter to Base Breakdown Voltage (I c

to
to

tea

1.1

volts
volts

0.2
1.5

tisec.

toff

iisec.

U tl

15

/xsec.

ton

notes:
+ITOV

All individual transistor characteristics

are given with the emitter of the complementary transistor open e.g., for Vcb<sat>
;

(NPN) = 25 ma,
ma, I (PNP) = 0.

(NPN)

2.5

Ic

Ib

(NPN)
'lamp

Derate current and power linearly to zero

at 125 C. The absolute maximum rating
at any given temperature shall be in
terms of the more conservative of the
two parameters, i.e., current or power.
The collector current of the PNP is identical to the base current of the NPN and
the collector current of the NPN is identical to the base current of the PNP. (See
outline drawing.)
indicates that appropriate polarity
:fc
should be chosen for transistor under test.
5 Voh(satxni'N) is modulated by the PNP
emitter current.
Collector capacitance is measured between
terminals 2 and 3. (See outline drawing.)

JHBMlS: HSK
;

-t-E.eV'ON

TO 0.2V
OFF INITIALLY

TYPICAL LATCHING
LAMP DRIVER

CIRCUIT DEFINING TEST

CONDITIONS

PIG.

522

pi a.

\ SPECIFICATION
UMST AT
IC

<

(NPN)-5MA

3N83

nf1

>
ar

dynamic characteristics

it

as

dc

SPECIFICATION

^XS I_(NPN)- IOMA

O
I

LIMIT

XlglNPN}.

characteristics

i-

X
Uf

'.

02

"\

(^(NPW-IOKa
1

-25

PIG.

+25

+75

+J25

AMBIENT TBIPERATURE-T. -"C

I (PNP>. 10MA

>

FIO.

-25

+25
Q
+50
AMBIENT TEMPERATURE -T.--C

25

3D

II

'

-50

10
15
ZO
COLLECTOR TO BASE VOLTAGE -V^.- VOLTS

(NPtM-O

(PNP). IOMA
"

R__(NPN)-IOKO

+K

+75

WO. 6
I C '25MA

I B -2.5M*

SPECIFICATION

; LIMIT

-75

I 'I'

-50

+25

I E{PNP)"G

+50

AMBIENT TEMPERATURE

- T.

+75

+100

+125

- -C

PIO. 12
i (ipj
t

*~ma

triggering characteristics
-75

-50

-25

+25

:+S0

+75

+100

+125

.'.

|50
;

AMBtENT TEMPERATURE -

T. - -c

FIO.

'V "-2-0V

.CC

0.05

-am
n

-75

-50

-25

+25

+50

AMBIENT TEMPERATURE -

+75

+100

T B - >C

FIG. 13

/- 05/
,

fio.

^Ucrcj*; current; i^

:r-i;.;

0.8

a:

p
<
VCE -0.5V

x
A

li
8 5 as

-75

as

i.o

2.0

coLlecTOR current, i.

PIO.

z
a.
z

SPECIFICATION

Mm*

ma

10
20 30 40
90
PNP EMITTER CURRENT

523

+25
AMBIENT TEMPERATURE

i.tmn^MA

FIO. lO

-50

FIG. 14

+50
-

+ 75
-

+100

+125

3N83

+ 12V FOR
LATCHING

95-120 DC OR
O RECTIFIED AC

AC FOR
NON- LATCHING

I2V

o o o o o o

3.9KJ

+ 2.6V = 0N
0-OFF
IOK

Jib

LIKE NEON DRIVER BUT

d> NE-81

IIW

OWr

I70 V

M50K
V

INITIALLY

I5K

WITH DIFFERENT

CURRENTS AND
VOLTAGE

13N83
+ 2.6V

=
=

<>Y
llZ

INPUT

ON
0FF

INITIALLY

WV

3N83

IOK

NEON DRIVER
FIO. IB

NIXIE TUBE
FIG. IS

*J

CC)

CB)
Y

CO}

I"
RESET "-IV 3 MA FOR
SS MAX LOAD

i;V-IV 33-s
** F0R
MAX LOAD

RESET

RESET

RESET

4v

reset

iv

methods
NPN

Four common reset methods are illustrated. The driver

circuit is modified by connecting or inserting the turn-off
circuitry to similarly lettered points. Method (A) reverse
biases the
base. Method (B) illustrates that several
stages can be turned off simultaneously by open circuiting

the
emitter. Method (C) reverse biases the PNP
emitter while method (D) open circuits one or more PNP
emitters. In each case, rate effect problems are non-existent
and no special care is required in shaping the reset 'wave"
forms.

NPN

no. t?

"i

+ 12V 1

20%

_?

(,

"

1_ 1

!_ ?

iook;

68 K

ii

i\AA>

68K
68K

IT
TO 5V
I0T0 20A.S1
prf 5KC MAX
I

6V

4.7K

4.7K

^^^r~i{^
C47K

<47K

J47K

--6V20%
NIXIE TUBE RING COUNTER
FIG. IS

524

Silicon

Controlled Switch

3N84.5

Electric Types 3N84 and 3N85 are PLANAR PNPN silicon controlled switches
an "extra lead" which completely eliminates rate effect (dv/dt) and voltage transient problems without compromising triggering sensitivity or transient response time. Unique
fabrication processes based on planar oxide passivation have resulted in high reliability and
uniformity at low cost. These devices are thoroughly characterized at temperature extremes to
permit worst case circuit design.
The 3N84 and 3N85 are ideally suited for low-level SCR applications such as lamp and relay

The General
that feature

memory

drivers, sensitive voltage-level detectors, bistable

ters,
ring counters, telemetry oscillators, time

elements, binary counters, shift regisdelay generators and pulse generators. These
devices are housed in a four-leaded TO-18 size case and all junctions are completely oxide
passivated. Other silicon controlled switches in this series provide characterizations suitable for
a wide variety of low-level switching functions and are described in General Electric publications No. 65.16 and 65.17.

Fourth lead completely eliminates rate

Dynamic and

static

effects (dv/dt)

breakover voltages are equal

Low

40 and 100 volt ratings

absolute

cost

TO-18

maximum

ratings:"'

(25C)

case

(unless otherwise specified)

DIMENSIONS WITHIN
JEDEC OUTLINE TO-10

3N84 3N85

Voltage

Anode to cathode forward and reverse

Anode gate to anode reverse
Cathode gate

Characterized at temperature extremes

40
40

100
100

175

175

0.5
2.0

0.5
2.0

10

10

10

10

100
10

100
10

to cathode reverse

EXCEPT FOR
LEAD CONFIGURATION

volts
volts
volts
HOTE

Total Current

Gate Current (Forward

1:

Lead diameter

(tig

plane

ma

HOTE

amps
amps

ol
2:

the

Leads haumg maximum diamelet

live to a

maximum

NOTE

Measured

3:

320
50

320
50

width tab
trwti

mai

diameter of

the actual device

ma
ma

iiy
CATHOOE

'

in

held

is

measured in gaging plane 054

001
000 Pelow the seating plane nt the device
shall be within 00? of true position tela

Dissipation
'

controlled

050 and .250 from the seat

Between 250 and end ol lead a

021

(.0191

Bias)

Continuous DC anode gate

Peak anode gate (T 4 = 100C, 100 ^sec.
pulse width, 1% duty cycle)
Peak cathode gate (T, = 100C, 100 usee,
pulse width, 1% duty cycle)
Continuous DC cathode gate
Total power 12
Cathode gate power' 2

is

zone between

Continuous DC forward'"'
Peak recurrent forward (T A = 100C, 100 /*see.
pulse width, 1% duty cycle)
Peak non-recurrent forward (10 ^sec. pulse width)

GATE

mw
mw

'

L)

oV.

3 GATE

CONNECTED
INTERNALLY
TO CASE

IC)i|

.6ze

Operating Junction
Storage

-55
65

electrical characteristics:"
CUTOFF CHARACTERISTICS

(NOTE

to
to

+125
+200

Symbol

Forward Blocking Current

(Rcc

10K, Vac

Rated Voltage)

Reverse Blocking Current

10K, Vc,

Rated Voltage)
Cathode Gate Reverse Cutoff Current (at Rated Voltage)
Anode Gate Reverse Cutoff Current (at Rated Voltage)
(Roc

Iga

CONDUCTING CHARACTERISTICS
Forward Voltage
(at 175ma

10K)

Rc.c

Ih

10K)

3)

Temp.

@ 25C
@ 125C
@ 25C
@ 125C
@ 25C
@ 25C

@ 25C
@ -55C
@ 25C
@ -55C

Vr
Anode Current

Holding Current

(R GC

.046
.036

,<D48

Temperature

3NB4

Typical Curves
Fig. #

3N8S
1.0

20
1.0

20
20

P&
pa
na

max
max
max
jita max
fj.a max

12

V max
V max
ma max
ma max

6,7

13

12

1.0

1.9
2.5

1.9
2.5

2.0

2.0

10

10

10
100

10
100

-55C

.65
1.0

.65
1.0

max
max
V max
V max

25C
125C

0.4
0.2

0.4
0.2

V
V

1.5
2.0

1.5
2.0

8, 9,

11

TRIGGERING CHARACTERISTICS
Cathode Gate Current
(Iotc

Cathode Gate Voltage

@
@
@
@
@
@

to Trigger* 3 )

from current source,

to Trigger'

V AC

40V, Ra

800S2)

(Vac = 40V, R A = 800fi,

Rcc = 10K, Roa = o )
Igtc from current source)

V UT

<-

TRANSIENT CHARACTERISTICS
Turn-On Time

(Vac

Recovery Time' 3

(Vac

IA

lOOma,

Ice

100 M a)

20V,

Ia

lOOma, Rc

10K)

NOTE

t r ,c m..

Rate of Rise of Forward Blocking Voltage

NOTE
NOTE

t ,

20V,

dv/dt

Symbols and nomenclature are defined at the top of the next page.
2
Derate currents and power linearly to 125C. The absolute maximum rating at any given temperature shall be in terms of the
more conservative of the two parameters, i.e. current or power.
3: The 3N84 and 3N85 test conditions include a 220K resistor added
1

max

525

25C

-55C
25C

@ 25C
@ -55C
@ 25C
@ 125C
@ 25C

15
15
25
25
See Note 4

na
n&

14

min
min

max
max
max
max
V/Vs max

10

/as

3,

ms
us
us

4, 5, 15,

16

from the anode gate to the anode supply voltage. I is the only
exception, the 220K resistor being deleted.
The dv/dt rating is unlimited when the anode gate lead is returned
to the anode voltage through a current limiting resistor. An
example of this technique is shown in Figure 23.

definition of

3N84, 5

PNPN

terms used

in

scs specifications

devices available at present

do not have a

common nomencla-

I F (FORWARD)
FORWARD CHARACTERISTICS

REVERSE CHARACTERISTICS

ture. In part, this is due to their

different construction and varied
applications. SCS nomenclature permits the reverse characteristics of
all three junctions to be specified.
The anode forward characteristic
and gate triggering characteristics
can also be specified fully. The
principles used in assigning symbols are illustrated at right and
with the outline drawing on pre-

VGTA
1

1 H HOLDING)
(

-VfVh
VgTBLOCKING)

V R (REVERSE)

V'

GC C

VB0 (BREAKOVER)

>"

V B0S (STATIC)

-v GC

VGTC

Ioc-

ANODE TO CATHODE CHARACTERISTICS

NOTE:

-ABSENCE OF G INOENTIFIES ANODE TO CATHODE

SYMBOLS. DOT IDENTIFIES OPERATING POINT.
BRACKETS INDICATE MEANING OF SUBSCRIPT LETTER.

vious page.

FIG.

l GTC

1=

FIG.

GTA

IFI

VOLTAGE AT GATE TO TRIGGER

GATE)
(CATHODE
~

REVERSE VOLTAGE AT GATE

CATHODE GATE)

VftOD (DYNAMIC)

GA C

G IDENTIFIES GATE SYMBOLS. LAST LETTER

(A OR C) MAY BE DROPPED IF NO AMBIGUITY
RESULTS IN SPECIFIC CHARACTERIZATION. F
MEANS "FORWARD" AND T MEANS "TRIGGER

Jl

v.
500 ppa

CONNECT

POWER

SUPPLYl

BEFORE
INPUT PULSE

ANODE WAVEFORM DEFINING RECOVERY

FIG.

TURN ON TIME TEST SET

FIG.

RECOVERY TEST SET

4
FIG.

forward voltage characteristics.,

holding current characteristics

Vf

'o.-

-25
eo

ANODE CURRENT

FIG.

izo

ioo
-

io

iso

leo

FIG.

200

+28

+75

AMBIENT TEMPERATURE -T.

+128
-

-C

MA

IA -

SPECIFIC ATION LIM T

"
3
x

I.-OOMA

a\

;]:JBjii

SPECIFICATION
LIMIT (Rj,. IOK)

-j;

M
R^.IKO

t
3,

II

I,-S0M

s
s
<

1.0

0.5:

02:

0.9

"~-~it*

"' <^S.

)MA

0.1

+25
+90
AMBIENT TEMPERATURE- T,

FIG.

+T5

+ IO0

+125

- -C

fig.

7
526

-25

+2S

+75

AMBIENT TEMPERATURE -T.--C

forward and reverse

blocking current,

it>.

3N84, 5

it

valley current,

iv

turn-on time
10

t SPECIFICATION

t SPECIFICATION

LIMIT ZBpSEC
AT -55*C

Rc*^~--~.

AT +85-C

2
.

v.

"
-

i_^

0.6

"

I A -ICOM <"

0.5

0.5

04

I^-.IMA

"(SC*

*?^^

10

0.2

0.1

;.:
i-T'S-.-r;,:;;

-25

>;S&;..

+75

+50

+ 25

AMBIENT TEMPERATURE

T,

+ I0O

05
-75

+I2S

-K

FIG* lO

FIG.

-25
+25
+75
ambient temperature - t - - *c

+25

-25

+125

+ 75

AMBIENT TEMPERATURE

+125

T. - "C

FIO. 12

11

triggering characteristics

SPECIFIC XT ION LIM T

I.OV

AT -55'C

A
\

R L =eooa

\\

v
\
^

SPECIFIC

\vAC

VAC* 4 <

-75

-50

mow

LIM T

VAC = 40V
IC

OOfl
IND

'^X/N

R GC = OKfl

CATES

SPEC IFICATION LIMIT

-25

+25

+50

TEMPERATURE -T

AMBIENT

+75

+100

+125

-75

-50

- "C

+25

-25

+50

AMBIENT TEMPERATURE

FIO. 13

+75

+100

+125

T- 'C

FIG. 14
I

SPEOFICATION LIMIT

recovery time

(R^'IOKI
SPECIFIC
LIMIT 2e

*SEC

AT IZ5*C

Ia" 30M/T

B
r

I0MA

I GA-

/C-

IOKA

"To:" K

-0

-^

KO

y^
~~
"ec"

IKO

Vf
^:75 ;,.,: :::-wt

-25

+25

+50

+T5

+100

+HZ5
-T3::

AMBIENT TEMPERATURE -T.-'C

;;

:::

;;-;S0;::

+85
AMBIENT TEMPERATURE

wo. te

NO.

527

18

+50
-

T.

+T5
-

-C

+K

+125

3IS184,

APPLICATIONS

#330

95 TO 105V
DC FOR LATCHING
AC FOR NON-LATCHING

LAMP

PULSE
AMPLITUDE
RESET METHODS

IS

EITHER

I0R3V

ISOK
<)

i"

INPUT
3 MA FOR
5 M S MAX

IV

LOAD

(b.)

A ONE VOLT AMPLITUDE PULSE TRIGGERS SCS

"1

BUT HAS

INSUFFICIENT AMPLITUDE TO TRIGGER SCS^.ATHREE

VOLT INPUT PULSE IS DELAYED IN REACHING SCS *1 BY THE

AND .OOlpf INTEGRATING NETWORK. INSTEAD, IT

TRIGGERS SCS *Z THEN RAISES THE COMMON EMITTER
VOLTAGE TO PREVENT SCS *\ FROM TRIGGERING. THE IOOK
RESISTORS SUPPRESS RATE EFFECT.
IOK

NEON LAMP DRIVER

FIG. 17

fio. ia
0+I8V
-o INTERRUPTED
+ ISV

INTERRUPTED

C+I5V TO REGISTER
(1.0 AMP MAX.)
IN4009
OR IN4I54
BASIC SHIFT REGISTER STAGE

THE SHIFT PULSE AMPLITUDE IS LESS THAN IS VOLTS.

IF A STAGE IS OFF, THE SHIFT PULSE WILL NOT BE
COUPLED TO THE NEXT STAGE. IF IT IS ON, THE
DIODE WILL CONDUCT TRIGGERING THE NEXT STAGE. JUST
PRIOR TO THE SHIFT PULSE THE ANODE SUPPLY IS
INTERRUPTED TO TURN OFF ALL STAGES. THE STORED
CAPACITOR CHARGE DETERMINES WHICH STAGES WILL BE

SHIFT PULSE LINE TO REGISTER

16

VOLT POWER SUPPLY CAN BE SYNTHESIZED AS SHOWN USING

RETRIGGERED.

INI692 RECTIFIERS. A SHIFT PULSE INPUT SATURATES THE 2N27W

DEPRIVING THE DARLINGTON COMBINATION (2N27I4 AND 2N2B68) OF
BASE DRIVE. THE NEGATIVE PULSE SO GENERATED ON THE 15V
LINE IS DIFFERENTIATED TO PRODUCE A POSITIVE TRIGGER PULSE
AT ITS TRAILING EDGE.

SHIFT REGISTER
fio.

ao

SHIFT REGISTER DRIVER

FIO. IS

LOAD CURRENT STARTS

APPROX. 0.5 RC AFTER
SWITCH IS THROWN
TIMING CIRCUIT

> INPUT
O.ZV OR 0.7V

I
NOV
AC

%r c-x
TV (^L^
^u^22

\y

C2a

WHEN R 5 DECREASES SUFFICIENTLY

TO FORWARD BIAS THE SCS, THE
ALARM IS ACTIVATED.

BRIDGE RECTIFIERS

HANOLE TOTAL LAMP LOAD

THE 2N2646 OSCILLATOR TURNS ON THE 2N527 FOR APPROX.
20 u SEC AT A IKC RATE IF THE INPUT IS AT 0.7 VOLTS THE
SCS TURNS ON GENERATING A PULSE TO TRIGGER THE SCR
DRIVING THE LAMP. BY USING A BRIDGE RECTIFIER AND A IKC
PULSE RATE THE LAMPS GIVE NORMAL BRILLIANCE. A Q.2V
INPUT DOES NOT TURN ON THE SCS AND THEREFORE THE LAMP.

INTERCHANGING R s AND THE

POTENTIOMETER TRIGGERS THE
SCS WHEN R. INCREASES.

IZV

TEMPERATURE, LIGHT, OR RADIATION SENSITIVE RESISTORS UP TO MEGOHM

READILY TRIGGER ALARM WHEN THEY DROP BELOW VALUE OF PRESET
POTENTIOMETER. ALTERNATELY, 0.75V AT INPUT TO IOOK TRIGGERS ALARM.
CONNECTING SCS BETWEEN GROUND AND-I2V PERMITS TRIGGERING ON
NEGATIVE INPUT TO GA
I

DRIVING

10V

ALARM

LAMPS FROM LOW LEVEL LOGIC

FIO.

FIG.

528

23

CIRCUIT

Silicon

Controlled Switch

3N86

PLANAR PNPN

The General

Electric Type 3N86 is a

silicon controlled switch (SCS) offering outstanding circuit design flexibility by providing leads to all four semiconductor regions. Unique fabrication
processes based on planar oxide passivation have resulted in high rehability and uniformity atlow cost. The
SCS is thoroughly characterized at temperature extremes to permit worst case circuit design.
The 3N86 can be considered an integrated PNP-NPN transistor pair in a positive feedback configuration.
As such it offers fewer connections, fewer parts, lower cost and better characterization than is available
from two separate transistors. Its characterization permits it to be used as an extremely sensitive SCR,
as a complementary SCR, or as a "transistor" with "latching" capabilities. Type 3N86 is intended for
applications requiring extremely low holding current, high triggering sensitivity at either gate and high
turn-off gain.

FEATURES:

Completely eliminates rate effect problems

static breakover voltages are identical
Extremely high triggering sensitivity at both gates

Low

Dynamic and

holding current
High turn-off gain

maximum

absolute

Design parameters specified at worst-case temperatures

Characterized for SCR and complementary SCR type applications
Characterized as PNPN and also as transistor integrated pair
All planar, completely oxide passivated
Leads to all four semiconductor regions

(25C)

ratings'"

(unless otherwise specified)

Voltage

Anode to cathode forward and reverse

Anode gate to anode reverse

65
65

Cathode gate to cathode reverse

DIMENSIONS WITHIN
JEOEC OUTLINE T0-I8

volts
volts
volts

EXCEPT FOR
LEAD CONFIGURATION

Total Current

Continuous

DC

forward' 2

'

Peak recurrent forward (T A

pulse width,

1%

200
100 C, 100

duty cycle)

Peak non-recurrent forward (10

Gate Current (Forward

DC

Continuous

anode gate

%
1%

pulse width, 1

DC

1.0
5.0

pulse width)

<2)

100

amps
amps

NOTE
(.019)

= 100C,

ma

500
20

ma
ma

'

'

400
100

mw
mw

controlled in the

2: Leads having maximum diameter

measured in gaging plane .054
.001

3:

maximum

rela-

width tab.

Measured from max. diameter of

the actual device.

PNP EMITTER

100 ^sec.

Dissipation

is

be within .007 of true position

tive to

NOTE

duty cycle
cathode gate

Total power' 2
Cathode gate power' 2

ma

200

Lead diameter

.000 below the seating plane of the device

100C, 100 ^sec.

duty cycle)

1:

zone between .050 and .250 from the seating plane. Between .250 and end of lead a
max. of .021 is held.

shall

Peak cathode gate (T A

Continuous

NOTE

Bias)

Peak anode gate (T A

pulse width,

/isec.

ma

/isec.

PNP BASE
NPN
COLLECTOR

vGY

(CylJ-l

Temperature

ANODE GATE
,

Operating junction
Storage

NOTE
NOTE

1:

2:

65 to
65 to

+150
+200

C
C

CATHODE

046

.026

INCHES AND ARE

REFERENCE UNLESS TOLERANCED

ALL DIMEN.

IN

(NOTE

3)

Symbols and nomenclature are defined below.

Derate currents and power linearly to 150 C, the maximum rated temperature. The absolute maximum rating at any
given temperature shall be in terms of the more conservative of the two parameters, i.e., current or power.

REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS

ll H ,H0LD.NQ)
V. (REVERSE)

VftBLO

0.O

GcO

>
>

v '

"MS STATIC)
VH0 <I>riUIMIC)

REVERSE VOLTAGE AT GATE

(CATHODE GAT El

VOLTAGE AT GATE TO TRIGGER

(CATHODE BATE1

AHODE TO CATHODE CHARACTERISTICS

G IDENTIFIES GATE SYMBOLS. LAST LETTER

<A OR CI MAY BE OROPPEO IF NO AMGIGUtTT
RESULTS IN SPECIFIC CHARACTERIZATION. F
MEANS 'FORWARD' AND T MEANS "TRIGGER"

NOTE -MSCNCE OF G INDCNTIFIES ANODE' TO CATHODE

SYMBOLS. DOT IDENTIFIES OPERATING POINT
BRACKETS HDICATE MEANING OF SUBSCRIPT LETTER.

PIO.

mo. a

DEFINITION OF TERMS USED IN SCS SPECIFICATIONS

PNPN devices available at present do not have a common nomenclature. In part, this is due to their different construction and varied applications. SCS nomenclature permits the reverse characteristics of all
three junctions to be specified. The anode forward characteristic and gate triggering characteristics can
also be specified fully. The principles used in assigning symbols are illustrated below and with outline drawing above.

529

3N86
electrical characteristics:
CUTOFF CHARACTERISTICS
(Rgc

10K, Vac

Ib max

S>

65V)

ffi

Reverse Blocking Current

(Roc

= 10K, Vca =

65V)

Ir max

= 5V)

Igc

65V)

Iga

Cathode Gate Reverse Cutoff Current (Vgc

Anode Gate Reverse Cutoff Current (Voa =:

CONDUCTING CHARACTERISTICS

Forward Voltage (I A
Forward Voltage (I A

<
z
o

o
(0

Roc

Vpma,
Vr ma.

10K)

Holding Current

(Rgc

h
<
N
E
UJ
h
o
<

= 200ma, Roc = 10K)

= lOOma, Iga = 50ma,

10K

Ih.

Holding Current

(Rgc

10K

Saturation Voltage

Saturation Voltage

Iga

50ma)

Ib...

=
=

(Ga to C) (Igc
(Ga to C) (Ioc

5ma,

Iga

0, Iga

= 50ma, I A = 0)
50ma, I A = 5ma)

VCEsat NPN

VcBsat NPN

TRIGGERING CHARACTERISTICS
Cathode Gate Current to Trigger
(Igtc from current source, Vac
Cathode Gate Current to Trigger
(Igtc from current source, Vac
Cathode Gate Voltage to Trigger

(Vac

Igtc

40V, Ra = 800fl, Roc

from current source)

Cathode Gate Voltage

(Vac

40V,

40V,

RA =

800fi)

40V,

RA

800fi,

800$),

Rgc

r.A

50ma)

Igtc max

Vgtc

10K, Rga

oo,

10K,

Iga

50ma,

Vgtc
Vgtc

from current source)

Igtc

max

Vgtc min

to Trigger

RA =

Igtc max

Anode Gate Current to Trigger

( Igta from current source, Vac
Anode Gate Voltage to Trigger
(Igta from current source, Vac
Rgc = 10K, Rga = IK)

40V, Re

800fi,

40V, Re

800Q,

Rgc

max
min

Igta max

10K)
Vc.TA max

VgTA

min

ton max

Recovery Time

Wee max

= 20V, Ia = lOOma, Rgc = 10K) (See circuit, Figu re 4)

Recovery Time (Vac = 20V, I A = lOOma, Rgc = 10K, Iga 50ma)
Collector Capacitance Voltage Gate to Gate = 20V
(Vac

tre, max

Oob max

dv/dt

Rate of Rise of Forward Blocking Voltage

(25C)

ilectrical Characteristics
DC CHARACTERISTICS

Breakdown Voltage (In

Breakdown Voltage (Ic

Collector to Base

Emitter to Bate

z
O
<
hN
5

<4)

= 0)
= 20/ia, I E

[PNP]

= l^a)

Forward Current Transfer Ratio

Forward Current Transfer Ratio

iia

1.0

2.0
2.5
1.5

0.2
0.8
2.0
8.0
2.0
2.0

1.0

,tia

50

/a

max
max

50

n&

max

0.15

V max
V max
V min
V min

0.8
0.4

V max
V min

.65
1.0

0.4

ma max
ma max
V max
V max
V min

0.1

0.25
0.8
1.0
0.4
0.2

@ 25C
@ -65C
@ 25C
@ 25C
@ 150C
@ 25C
@ 25C
@ 25 C

,us

,us

2.0

15
25
15
15
(see note 5)

NPN

Max.

-65
-65

Max.

Min.

65

volts
volts

Vce (sat)

volts

Vbeoat)

0.9

volts

20

IIfb

hpE

= 65 volts)
Collector to Emitter
= 150C)
(Rb = lOKfi, Ta = 150C)
Collector to Base Leakage Current (I E = 0, Ta = 150 C)
Emitter to Base Leakage Current (Ic = 0, T A = 150C)
(V EB = 5Vdc, Ic = 0)

pf

V/^sec

3N88
PNP 1

BVcBO
BVkbo

min

max
max
/xsec max
lis max
ims max
ixsec max

1.5
2.0

Min.

1.0/aa, Ib

[NPN]

/ia

20
20
20

(unless otherwise specified)

50ma, Ib
5ma)
lma, I B = 5ma)
(Vce = 0.5V, Ic = 3ma)
(Vce = 2.0V, Ic = lma)

Collector Saturation Voltage (I

Base Saturation Voltage (Ic

[]

0, I B

max

max
max
/ia max
na. max
pa max
H& max
V max
V max
V max
ma max
ma max
ma max
ma max
V max
V max

1.0
1.0

@ 25C
@ -65C
@ 25C
@ 25C
@ -65C
@ 25C
@ 150C
@ 25C
@ 25C
@ 25C
@ -65C
@ 25C
@ -65C
@ 25C
@ 150C

ton max

20V, I A = lOOma, I oc = lOO^a) (See circuit Figure 3)

Turn-On Time (Vac = 20V, I A = lOOma, Igc lOO^a, Iga = 50ma)
(Vac

25C
150C
25C
150C
25C
25C

@
@
@
@
@ 25C
@ -65C
@ 25'C
@ 25C
@ -65C
@ 25C
@ -65C
@ 25C
@ 25C

TRANSIENT CHARACTERISTICS
Turn-On Time

3N86

Temp.

Symbol'

Forward Blacking Current

0.2

CUTOFF CHARACTERISTICS

(Vac
Leakage Current (Ta

-20

IcEO
IcER

iua

20
20

-20
-20

Icbo

Iebo
Iebo

list
list

lia

20

TRANSIENT CHARACTERISTICS
Collector Capacitance (I E

= 0, Veb =

[]"' 20V)

NOTE

transistor characterization
a
restatement of
is
essentially
characterization and is meant to facilitate using the SCS
complementary PXP-NPX integrated transistor pair.

NOTE

XPX

220K

^I0K

J^

2NI923

-^

IN4I48
'DEVICE

c-^r

UNDER TEST

CONNECT
POWER SUPPLY
BEFORE
INPUT PULSE

FIG.

1-

-O

220K
IN4I48

X
o

mc

require
t ransistor.
The [] sign indicates that the PXP and
opposite polarities as identified by the test conditions.
rating
is
unlimited
when
is
returned
dv/dt
the
anode
gate
lead
5: The
to the anode voltage through a current limiting resistor

4:

O
[*ki 200fl

RECOVERY TEST SET

FIG.

530

pi

15
75

fT

The
SCS

20 V

15

Cot

Gain Bandwidth Product

2N58I6

4
TURN ON TIME TEST SET

+ 40V

ivONICS

Photon Coupled Isolator 4N25-4N25A-4N26-4N27-4N28

Ga As

& NPN

Infrared Emitting Diode

Silicon Photo-Transistor
SYMBOL

The General

Electric

4N25-4N26-4N27-4N28

consist of a
gallium arsenide infrared emitting diode coupled with a sili-

con photo transistor

jj.u

FEATURES:

t
10

High isolation resistance

2500

I/O compatible with integrated circuits

("Parameters are

JEDEC registered

|-

30

-I

volts isolation voltage

.300

.5

06

SEATING

H"k

"

PLANE

.0

.0
.0

.0

.1

4C
9C

.225

1.

.1

.2

85
80

5
3

.375

9.53
2.54
5.7
1

47 C
7.12

orientation
terminal

H.Jr
|~D

indication of term
the quadrant adjacent to

permanent

There shall be
inal

K-io

.3

00

.1

1.78

2.28

.0

2
3

50 E
5.0 8

2.79
.08 5
2.1 6
.0
2 .2 03
.305
2.5 4
.1

08
00

I-

8.64

.406

.07 C 1.0

N
P
R

J_!

2C

NOTES

NOTES:

'

.20C

G
H

MILLIMETER
MIN.
MAX
8.3 8 18.89
7. 6 2
REF

.340
6

-kl~

REF

C
.01

in a dual in-line package.

Fast switching speeds

High DC current transfer ratio

..^k

1#

INCH
MAX.

.3

TTTTTT,,
3

MIN

in

lead centers.
3 Overoh installed dimension.
4. These measurement*; are fnode fmrn the spit2. Installed position

ing plane.
5.

Four places.

values.

maximum

ratings: (25C) (unless otherwise specified)

absolute
fStorage Temperature -55 to 150"C. Operating Temperature -55 to 100C. Lead Soldering Time
INFRARED EMITTING DIODE
*150
80

t Power Dissipation
t Forward Current (Continuous)
t Forward Current (Peak)
(Pulse width 300 jusec 2% duty
*Derate

milliamps

ampere

cycle)

t Reverse Voltage

TVceo
TVcbo

**150
30
70

t V ECO

24-25 C. P D

fDerate 3.3

volts
volts
volts

milliamps

2.0mW/C above 25C ambient.

**Derate

250mW.

milliwatts

100

Collector Current (Continuous)

volts

2.0mW/C above 25 C ambient.

f Total device dissipation

260C) 10 seconds.

PHOTO-TRANSISTOR
f Power Dissipation

milliwatts

(at

mW/C above

25 C ambient.

individual electrical characteristics (25C)

INFRARED EMITTING

TYP.

MAX.

PHOTO-TRANSISTOR

UNITS

DIODE
t Forward Voltage
(I F

= 10

1.1

1.5

t Breakdown Voltage

volts

mA)

(I c

MIN. TYP.

V( BR CEO

100

50

Capacitance

micro amps

picofarads

V = 0,f=l MHz

coupled
fDC

t Saturation Voltage
I c = 2 mA)

V( BR ) CBO
= IOOjuA, I F = 0)
t Breakdown Voltage V( BR ) ECO
(I E = 100,uA, I F =0)
fCollector Dark Current I C eo 4N25-27
4N28
(V CE = 10V, I F =0)
t Collector Dark Current Icbo
(V CB = 10V,I F =O)

(I F

Collector

= 10mA,

V CE

Emitter

(I F

= 10V)

70

volts

volts

50
100
20

nanoamps
nanoamps
nanoamps

4N25, 4N25A, 4N26

4N27, 4N28

= 50mA,

Resistance - IRED to Photo-Transistor (@ 500 volts')

Capacitance - IRED to Photo-Transistor (@ volts, f =
- voltage @ 60 Hz with the input
t Isolation Voltage
terminals (diode) shorted together and the output
terminals (transistor) shorted together.

MHz)
4N25
4N26, 4N27
4N28

4N25A
Rise/Fall

volts

electrical characteristics (25C)

Current Transfer Ratio

Rise/Fall

30

(I c

(V R = 3V)

UNITS

= lmA,I F = 0)

t Breakdown Voltage
t Reverse Current

MAX.

Time (V CE = 10 V, I CE = 2mA, R L = 100S2)

Time (V CB = 10V, I CB = 50mA, R l = 100S2)

g,..

MIN.

TYP.

MAX.

20
10

%
%

0.1

0.5

volts

100

2500
1500

500
1775

gigaohms

300

UNITS

picofarad
volts (peak)
volts (peak)
volts (peak)

volts

(RMS) (1

microseconds
nanoseconds

sec.)

4N 25-28

TYPICAL CHARACTERISTICS
I

1.0

NORMALIZED
VCE
I

F =

10mA

'

TO:

10V
Otr A

20mA

5mA

*-"""""~
1

0.1

NORMALIZED

a.

V CE
TA

F -

10

INPUT CURRENT

TC

25"C

100

10
I

TA

100

65

25

mA

AMBIENT TEMPERATURE

*C

OUTPUT CURRENT VS TEMPERATURE

OUTPUT CURRENT VS INPUT CURRENT

10

1,000

y
/

<

If

50 mA

If

10mA

If"

5mA

/_

1.0

0.1

0.1

.5

1.0

VF

2.0

1.5

FORWARD VOLTAGE

NORMALIZED

.1

VOLTS

'

CE

VCE

IF

10mA

TO:

10V

100

10

-COLLECTOR TO EMITTER VOLTAGE

VOLTS

OUTPUT CHARACTERISTICS

INPUT CHARACTERISTICS

10

9.

<

u.

F L = 1) ca

2 O

\.o

ORMAL
VCE

IZE

= 10

ro

VOLTS

VCB

Iceo
'on

RL

mA

"

rl

ion

10 V

'r

= IC ion

.01
1.0

10

100

10

-OUTPUT CURRENT -mA

If-INPUT CURRENT -mA

OUTPUT CURRENT

SWITCHING TIMES VS OUTPUT CURRENT

532

(I

C bo)

VS INPUT CURRENT

Photon Coupled
Ga As

4N29-4N29A-4N30-4N31
4N32-4N32A-4N33

Isolator

& NPN

Infrared Emitting Diode

Silicon Photo-Darlington Amplifier

INCH
MAX.

SYMBOL

4N29

thru 4N33 consist of a gallium

arsenide infrared emitting diode coupled with a silicon photodarlington amplifier in a dual in-line package.

The General

Electric

MIN.
.3 3
.30 C

A
e
D
E
F

9C

G
H

.0

.100

High DC current transfer

High isolation resistance

2500

ratio

3.

4.

ratings: (25C)

*1 5

so
3

2% duty

milliwatts

f Power Dissipation

milliamps

fV C EO

ampere

cycle)

t Reverse Voltage

00

.1

.225

.1

.2

.3

85
80

.30 5
5
3

9 53
2.54
5.7
1

.47 G

7.12

There shall be a permanent indication of term

inal orientation in the quadrant adjacent to

lead centers.
Overall installed dimension.

These meisurempnts are

rrrjd* frnrf

the sell-

Four places.

(at

260C) 10 seconds.

25 C.

**150

milliwatts
volts

t V CBO

30
30

tV E co

volts

Collector Current (Continuous)

volts

2.0mW/C above 25 C ambient.

@ TA =

03

PHOTO-DAR LI NGTON

t Power Dissipation
t Forward Current (Continuous)

t Total device dissipation

.375

1.78

2.79
2 6

(unless otherwise specified)

INFRARED EMITTING DIODE

*Derate

5.0 8
1.01

.2

50 8

ing plane.
5.

fStorage Temperature -55 to 150C. Operating Temperature -55 to 100C. Lead Soldering Time

t Forward Current (Peak)

(Pulse width 300/isec,

.406

NOTES

2. Installed position

I/O compatible with integrated circuits

Parameters are JEDEC registered values.

maximum

8.64

NOTES:

volts isolation voltage

absolute

C 2.2

j-

MILLIMETER
MIN.
MAX.
8.3 8 18.69
7. 6 2
REF

254
1

.0

1.

.1

.08 5
8 .0 2

REF

.340
.01 6 .0 2C
.20C
,0 4
.07C

FEATURES:

.3

volts

100

milliamps

**Derate 2.0mW/C above 25C ambient.

Pp 250 mW.

t Derate 3.3

mW/C above

25

C ambient.

individual electrical characteristics (25C)

INFRARED EMITTING

PHOTO-DARLINGTON

TYP.

MAX.

1.2

1.5

volts

100

microamps

UNITS

MIN. TYP.

DIODE
t Forward Voltage
(I F

f Reverse Current

(V R = 3V)
Capacitance
V = 0,f = 1

coupled

50

Breakdown Voltage V( B r)cbo

(I c = 100/iA, I F =0)
f Breakdown Voltage V(br)ceo
(I c = lmA,I F = 0)
t Breakdown Voltage V( B r)eco
(I E = 100/1 A, I F = 0)
t Collector Dark Current Iceo
(V CE = 10V, I F = 0)
t

= 10mA)

picofarads

MHz

UNITS

30

volts

30

volts
volts

nanoamps

100

electrical characteristics (25C)

MIN.

t Collector

MAX.

Output Current

(I F

= 10mA,

V CE

= 10V)

4N32, 4N32A, 4N33

4N29, 4N29A, 4N30
4N31
4N29,29A,30,32,32A,33

- Collector - Emitter
(I F = 8mA, I c = 2mA)
Resistance - IRED to Photo-Transistor (@ 500 volts)
Capacitance - IRED to Photo-Transistor (@ volts, f =

fSaturation Voltage

(Isolation Voltage 60 Hz with the input terminals (diode)

shorted together and the output terminals (transistor)
shorted together
fSwitching Speeds: I c = 50mA, I F = 200mA) Figure 1

Turn-On Time t on
Turn-Off Time - t off
Turn-Off Time - t off

4N3
1

MHz)

50
10
5

volts

volts

40
100

mA
mA
mA

1.2

1775

4N29A, 4N32A

100

UNITS

1.0

2500
1500

4N29, 4N29A, 4N30, 4N3

4N32, 4N32A, 4N33
K33

MAX.

4N29,29A,32,32A
4N30, 4N31 4N33
,

TYP.

gigaohms
picofarad
volts (peak)

volts (peak)
volts

(RMS)

(1 sec.)

microseconds
microseconds
microseconds

4N29-33

TYPICAL CHARACTERISTICS

PULSE

OUTPUT

Ucc
IF

PULSE WIDTH

I.

5V

!lU

.001

Oms
.0001
F

100

10

1.0

- INPUT

CURRENT

MA

OUTPUT CURRENT VS INPUT CURRENT

SWITCHING TIME TEST CIRCUIT

10

1,000
1

2.0MA

F * 1.0

/
H

MA

1.0

F = 0.5

i.o

MA

J**'

^^

NO RMALIZED

y<

\ CE "

0.1

TO:

5V

F = 1.0 MA
T = + 25C
I

.01

.001

65

25
TA -

AMBIENT TEMPERATURE

100
-

.5

OUTPUT CURRENT VS TEMPERATURE

2.0

1.5

1.0

VF

'C

FORWARD VOLTAGE

VOLTS

INPUT CHARACTERISTICS

10
|

^
io-

*!

1.0

F =1.0

MA

...

<

10'

O
I

0.5

UJ

MA

IO 2

z
o

IO

<

III
II

NORMALIZED

VCE

NORMALIZED TO:
- = 5V
'c
f = 1.0 MA

//

TA

TO:

IOV

n
t25C

II

.01

1.0

V CE

+ 25

10

COLLECTOR TO EMITTER VOLTAGE -VOLTS

+45
TA -AMBIENT

+65
TEMPERATURE

+85
-

"C

NORMALIZED DARK CURRENT VS TEMPERATURF

OUTPUT CHARACTERISTICS
534

IONICS

Photon Coupled Isolator 4N35-4N36-4N37

Ga As

Infrared Emitting Diode

& NPN

Silicon Photo-Transistor

The General Electric 4N35-4N36-4N37 are gallium arsenide

infrared emitting diodes coupled with a silicon photo-transistor in a dual in-line package.

FEATURES:
Fast switching speeds

High

DC

current transfer ratio

High isolation resistance

High isolation voltage

I/O compatible with integrated circuits

Covered under U.L. component recognition program, reference

absolute

maximum

ratings: (25C)

file

E51868

(unless otherwise specified)

INFRARED EMITTING DIODE

*

Power Dissipation

Power Dissipation

Ta
Tc

Clfc indicates collector

= 25 C

moo

= 25 C

#100

lead temperature 1/32

Forward Current (Continuous)

Forward Current (Peak)

(Pulse width 1 usee,

60
3

milliwatts
milliwatts

from

case)

milliamps

ampere

B
C

300 pps)

Reverse Voltage

MAX

MIN
3
.30

.0 4
.0

.0

.1

PHOTO-TRANSISTOR

Power Dissipation

T^ = 25C

6300

milliwatts

Power Dissipation

Tc = 25 C

66500

milliwatts

ls.8

02

406

08
00

.0

.!

.2

5
3

.3
.3

.225

.2

2.79
2.1 6
.305

00

.1

1.78

2 28

2.5 4
1

.01

50 8
5.0 8

NOTES

REF
B.64

.08 5

5"

9.53

75

85 2.54
80 5.7
1

.47 C
7.

12

There shall be a permanent indication of term

inal orientation in the quadrant adjacent to

2. Installed
3.

6 2

R
S
NOTES:

7.

7 C 1.0

M
N

38

REF
,20C

G
H

^Derate 1.33mW/C above 25C

.340

volts

.5

.3

.0!

MILLIMETER
MIN.
MAX.

INCH

SrMBOL
A

position lead centers.

Overall installed dimension.

are rrodp from the sent-

4 These meisurempnts

(TC indicates collector lead temperature 1/32 from case)

*
*
*
*

V CEO
V C BO
VEC0
Collector Current (Continuous)

30

volts

70

volts

volts

100

ing plane.
5.

^Derate 4.0mW/C above 25C

6.7mW/C above 25C

TOTAL DEVICE
Temperature -55 to 150C

* Operating

Temperature -55 to 100C.

* Lead Soldering

Time

Relative Humidity
* Input to

260C) 10 seconds.

85%@85C

Output Isolation Voltage

4N35
4N36
4N37
* Indicates

(at

2500
1750
1050

V (RMS
V (RMS)
V (RMS)

JEDEC registered

3550

31
I

milliamps

AsiftDerate

* Storage

Four places.

V (peak)

2500 V(peak)
1500 V(peak)

values

535

06

fv4
I

oA

4N35-37

individual electrical Characteristics (25 C)

INFRARED EMITTING
*

Forward Voltage
(I

SYMBOL

MIN.

VF

.8

MAX.

UNITS

Breakdown Voltage

F = 10 mA)

(I

Forward Voltage

vF

.9

1.7

volts

vf

.7

1.4

volts

F = 10 mA)
TA = -55C

Forward Voltage
(Ip = 10

volts

70

volts

Breakdown Voltage
(I F = lOOuA, I F = O)

V(BR) ECO

volts

Collector Dark Current

ICEO

50

nanoamps

tCEO

500

microamps

10V, lp = 0)

microamps

10

Dark Current

* Collector

(V R = 6V)

100

Cj

MAX.
-

mA, I F = O)

10

(Vce=

Capacitance

V(BR) CEO

V(BR) CBO

mA)
IR

TYP.

30

Breakdown Voltage
(I C = lOOuA, I F = O)

TA = +100C
* Reverse Current

MIN.

(I

C=

UNITS

SYMBOL

PHOTO-TRANSISTOR
*

volts

1.5

(unless otherwise specified)

(Vce = 30V, I F = O)
c
TA = ioo c

picofarads

(V=0, f=l MHz)

(Vce=

10V, f =

picofarads

CCE

Capacitance

1MHz)
1

electrical characteristics (25C)

coupled

DC Current Transfer
DC Current Transfer
DC Current Transfer
Saturation

(unless otherwise specified)

Input to Output Resistance (Input to Output Voltage =

V (peak)

500V -

Input to Output Capacitance (Input to Output Voltage =

_
-

_
-

100

microamps

100

microamps

100

microamps

100

2.5

1)

10

microseconds

1)

10

microseconds

40

0,

/=

40

4N35
4N36
4N37

See Note 1)

1MHz

Turn on Time - t on (V CC = 10V, Ic = 2MA, R L = 100^2) (See Figure

Turn off Time - t off (V Cc = 10V, Ic = 2MA, Rl = 10012) (See Figure

100

(I

Input to Output Voltage = 1500

MAX.

Ratio (Ip =

Input to Output Isolation Current (Pulse Width = 8 msec)

Input to Output Voltage = 3550 V (peak)
(See Note 1)
Input to Output Voltage = 2500 V (pe ak)

Note

TYP.

F = 10mA, Vce = 10V)

10mA, VcE = 10V) T A = ~ 55 C
=
10mA, VcE = 10V) T A = +100C
Ratio (Ip
Voltage-Collector To Emitter (If = 10mA, Iq = 0.5mA)
Ratio

See Note 1)

Tests of input to output isolation current resistance, and capacitance are performed

with the input terminals (diode) shorted together and the output terminals
(transistor) shorted together

Indicates

JEDEC registered

values.

VOLTAGE WAVE FORMS

TEST CIRCUIT

Adjust Amplitude of Input Pulse for Output (Iq) of 2

FIGURE

536

UNITS

MIN.

mA

0.3

%
%
%
volts

gigaohms
picofarads

TYPICAL CHARACTERISTICS

4N35-37

/
/
/
1
/

11
ID

VF

1.5

FORWARD VOLTAGE

2.

1.0
I

INPUT CHARACTERISTICS

1.

.6

VOLTS

40

20

10.0

60 80

IOO

-FORWARD CURRENT-mA

FORWARD CURRENT TEMPERATURE COEFFICIENT

vCE '?ov
vCE

'

ov

-1

/
VCB .30V
VCB -20V

NORMALIZED TO

//

v CE

IQV

T4

*?5*C

//
NORMALIZED TO

//

Vce =IOV
T A -*25"C
I

5
Tfl

3.

+ 5
*75
-AMBIENT TEMPERATURE

-0

X
-

"C

DARK CEO CURRENT VS TEMPERATURE

4.

lcBO

vS TEMPERATURE

NOR WUJZED TO'

10 VOLTS
10

If

mA

10

__
^^

&!

,0

//
F

*/

'

.5

<
F

mA

"

/,

001
01

//
c

vrF " COLLI jCTOR t

5.

"

Ip-lmA

'

1
t

/
,'

'
/

loo-c

II

/
/

Z5"CjC , '
>^ 5<^'mA

llr

'

/
'

.01

ooc

/
/

nu

=IOmA

0.5

10mA -

'

J-M
,'

=>

1
z

25C

'

-*

10*

01

EM TTER VOLTAG E-VO -TS

02

6.

537

.06 .08 0.1

.2
4
COLLECTOR TO EMITTER VOLTAGE

.04

VCE

OUTPUT CHARACTERISTICS

'

.6
-

.8

VOLTS

OUTPUT CHARACTERISTICS

1.0

2.0

4N35-37

TYPICAL CHARACTERISTICS

NOmULIZED TO
.iov
M -IOmA

If

JO
.5

''

.001

.0003

.8

IO

2
4
<
If- INPUT CUftRENT-mA

40

20

K>

CO SO

OUTPUT CURRENT VS INPUT CURRENT

7.

100

8.

40

10

60 80 100

CURRENT-mA

INPUT

OUTPUT CURRENT - COLLECTOR TO BASE

VS INPUT CURRENT
_

^
T
F 'S<

3mA
1

J^'W^

mA

_
-

II

K^-.
J

l>*

5mA

r
o

;Z

/
/
J?

/-

0*
ot

2mA ZI

NORMALIZED TO

-IOmA

XP

,.

mA

U/l

04
IF -

1mA

Vce-lOV
I
F >)OmA

.02

**

SO

5
TA -A*

JO

WENT TE MKfutrunE

OUTPUT CURRENT VS TEMPERATURE

9.

00

rs

to

tote 166

*O0

400 COOIUOKWO

-*c

10.

OUTPUT CURRENT VS BASE EMITTER

RESISTANCE

-^
1

ISO

^,

Mill

-R 1

NORMALIZED t^, FOR

IF -

M FOR

Ip

Hjc'Wv

IOmA

UJ

<fl
jj

lI

N^

NORMALIZED TO:
ICE0"

NORMALIZED

.4

.6

.8

1.0
I

11.

L*ioa

2
4
6 8 10
ceo -OUTPUT CURRENT-mA

20

40

6080 100

* )

-y /

R L 'IO0l

V>

R L -roon

ZOmA

i"
*

2mA

<

NORMALIZED

tgfi

FOR

If

JORMALIZED

tF

NORM lizeo

>a to:

IOmA

IOmA
e.

-ZOmA

12.

538

FOR

If

!!,(-

SWITCHING TIMES VS OUTPUT CURRENT

(off

W
KO
EXTERNAL BASE ttEStSTOR-KO

SWITCHING TIME VS

RtjE

IO DO

v*

>

Isolator 4N38-4N38A
Diode & NPN Silicon Photo-Transistor

Photon Coupled
Ga As

Infrared Emitting

SEE

NOTE

The General

Electric

4N38 and 4N38A

consist of a gallium
arsenide infrared emitting diode coupled with a silicon photo
transistor in a dual in-line package.

TTTT

TT

3
.30

.3

B
C
D
E

i*

(TOPVIEW)

.0

6
I

.0

.1

.0

High isolation resistance

2500

t Power Dissipation
t Forward Current (Continuous)

5.

milliwatts

80

milliamps

t Reverse Voltage

ampere

.3

5
3

9.53

85 2.54
5.7

.47

7.12

lead centers.
are

mode frnm

the sent-

Four places.

260C) 10 seconds.

**150
80

1"Vcbo
tV EC o
Collector Current (Continuous)

volts

C ambient.

25 C. Prj 250

(at

PHOTO-TRANSISTOR
t Power Dissipation
tV C EO

2% duty cycle)

@ Ta =

5
3

(unless otherwise specified)

f Forward Current (Peak)

25

3 Overall installed dimension.

INFRARED EMITTING DIODE

f Total device dissipation

2.5 4

4 These measurements

ratings: (25C)

mW/C above

50 8
5.0 8

.225 .280

terminal

fStorage Temperature -55 to 150C. Operating Temperature -55 to 100C. Lead Soldering Time

*Derate 2.0

00

.1

NOTES

There snail be a permanent indication of term

inal orientation in the quadrant adjacent to

volts isolation voltage

(Pulse width 300/nsec,

8.64

.406

2. Installed position

I/O compatible with integrated circuits

Indicates
JEDEC registered values
f

maximum

REF

.375

R
S
N0TE5;

absolute

62

MILLIMETER
MIN.
MAX.
8.3 S 18.69

.07 C 1.0
1.78
2.79
C 2.2 8
.08 5
2.1 6
.0
.305
2 .2 03
.1

00

Fast switching speeds

High DC current transfer ratio

.340
.0 2C
.20C

-H^

-Hk

REF

JJ, J_L J_k

FEATURES:

.3

,0 4
,09C

INCH
MAX.

SYMBOL

**Derate 2.0

mW.

f Derate 3.3

mW/C above

mW/C

above

25C

milliwatts
volts

80

volts

volts

00

milliamps

ambient.

25 C ambient.

individual electrical characteristics (25 C)

INFRARED EMITTING

TYP.

MAX.

1.2

1.5

DIODE
t

Forward Voltage
(I F = 10mA)

t Reverse Current

UNITS
volts

coupled

MIN. TYP.

V( BR ) CEO
= 1mA, I F =0)
t Breakdown Voltage V( BR)CBO
(I c = 1/uA, I F =0)
t Breakdown Voltage V( BR ) ECO
(I E = 100/itA, I F =0)
t Collector Dark Current Iceo
(V CE = 60V, I F = O)
t Collector Dark Current Icbo
(V CE = 60V, I F = O)
t Breakdown Voltage

100

microamps

50

MHz

picofarads

MAX.

UNITS

80

80

volts

volts

50

nanoamps

20

nanoamps

(I c

(V R = 3V)

Capacitance
V = 0,f = 1

PHOTO-TRANSISTOR

volts

electrical characteristics (25C)

MIN.

60Hz with the input terminals (diode)

shorted together and the output terminals (transistor)
shorted together.
t Saturation Voltage Collector Emitter (I F = 20mA, I c =
Resistance - IRED to Photo-Transistor (@ 500 volts)

4N38

t Isolation Voltage

Capacitance - IRED to Photo-Transistor (@0 volts, f =

DC Current Transfer Ration (I F = 10mA, V CE = 10V)
Switching Speeds (V CE = 10V, I c = 2mA, R L = 100ft)

4N38A
4N38A
4mA)

MHz)

1500
2500
1775

TYP.

MAX.

volts

1.0

volts

UNITS
volts (peak)

100
1

10

volts (peak)

(RMS)

(1 sec.)

gigaohms

microseconds
microseconds

picofarad

Turn-On Time t on
Turn-Off Time t ff

539

...

5
5

4N38-38A

TYPICAL CHARACTERISTICS
10

i.o

NORMA LIZED

F =

20mA

F =

10mA

"I

s"

TO'-

VOLTS
lumA
10

0.1
IF -

NORMALIZED
VCE
I

TA
0.01

Ami

VOLTS

= 10

F = 10

Ij-

TO:

mA

+25C
I

1.

8 10
20
-INPUT CURRENT -mA

6
IF

40

60 80 100

-55

+25

-15

TA

OUTPUT CURRENT VS INPUT CURRENT

2.

1,000

+65

AMBIENT TEMPERATURE

+ I00

*C

OUTPUT CURRENT VS TEMPERATURE

10

-^^H

If- IQmA_

If- 5 mA

1.0

<
*

?==

0.1

<
z
a.
o

0.1

1.0

3.

.01

.1

VOLTS

V CE

INPUT CHARACTERISTICS

4.

100

10

COLLECTOR TO EMITTER VOLTAGE

VOLTS

OUTPUT CHARACTERISTICS

300

10

V CE

10 s

lOmA

1.5

V F - FORWARD VOLTAGE

" If =

.001
.5

NORMALIZED TO:
VC e = 10 VOLTS

1 1
1

60 V

250

IF

o 200

io*

50ir

<
10'

<
z

NO RMALIZED TO
CE = 60 VOLT S

IK

IF

TA

10"

100

-0
=

VC b

'

OV

If -10 mA

*25C

2 50 vCB -iov
If 5mA

10"

+ 25

+50
T A -AMBIENT
AMBIENT

5.

+75

+ 100

TEMPERATURE -

+ 125

-25
+25
+50
TA -AMBIENT TEMPERATURE - "C

*C

NORMALIZED DARK CURRENT VS TEMPERATURE

6.

540

COLLECTOR BASE CURRENT VS TEMPERATURE

VM
Z-M

Photon Coupled Isolator

Ga As

Infrared Emitting Diode

&

The General Electric 4N39 and 4N40

4N39-4N40

Light Activated

SCR

--

SEE

NOTE!

TTTT TT /
~f

consist of a gallium arsen-

ide, infrared emitting

controlled rectifier

diode coupled with a light activated silicon

in a dual in-line package.

(TOP VIEW)
4

\4

maximum

MAX
3

.3

.3 5

.300

REF

.340
-0 2C
,20C

C
|

E
F

6
I

absolute

i
1

ratings

.0

4C
9C

.0

G
H

.0

.0

.1

INFRARED EMITTING DIODE

*100
60

8.64

.1

.0

5.0 8

2.79
2.1 6

N
P

.0

ft

J 00
.225

.3

.3
.1

.2

.305

.2

1.78

2.28

254
1

50 8

.406

.08 5

milliwatts

MAX.
MIN.
8.3 8 18.8 9
REF.
7.6 2

.07 C 1.01

00

t Power Dissipation (-55C to 50C)

t Forward Current (Continuous)
(-55C to 50C)

MILLIMETER

INCH

SYMBOL
A

5
3

7 5

9.53

85 2.54
80 5.7

.47C
7.12

NOTES;
There shall be a permanent indication of term
inal orientation in the quadrant odjacent to

milliamps

terminal

position Ieo0 centers.

Overall installed dimension.
These mei'u'-empnt'i are mitt? from the spiting plane
Four ploces.

2. Installed

t Forward Current (Peak) (-5 5 C to 5 0 C)

(lOOjitsec 1% duty cycle)

ampere

volts

3.

4.
5.

t Reverse Voltage (-55C to 50C)

*Derate 2.0m W/C above 50C.

TOTAL DEVICE
tStorage Temperature Range -55C to 150C

PHOTO-SCR
t Off-State and Reverse Voltage

(-55Cto+100C)

4N39
4N40

fPeak Reverse Gate Voltage (-55Cto 50C)

fDirect On-State Current (-55C to 50C)

200
400

volts

volts

Temperature Range -55C to 100C

Temperature Range (No Derating) -55C to 50C
fSoldering Temperature (1/16" from case, 10 seconds) 260C

milliamps

t Total Device Dissipation (-55C to 50C),

-(Operating

300

t Surge (non-rep) On-State Current

(-55C to 50C)

10

fPeak Gate Current (-55C to 50 C)

10
fOutput Power Dissipation (-55C to 50C)**400
**Deiate

8mW/C

t Normal

volts

Factor (above 50C), 9.0mW/C

f Surge Isolation Voltage (Input to Output). See: Pg. 23

milliamps

1500V (peak)
1060V (RMS)
fSteady-State Isolation Voltage (Input to Output). See: Pg. 23

milliwatts

950V (peak)

above 50C.

660V (RMS)

individual electrical characteristics (25 C) (unless otherwise specified)

INFRARED EMITTING DIODE
TYP.
MAX.
UNITS
PHOTO-SCR
fForward Voltage
VF
1.1
1.5
volts
fPeak Off-State Voltage - V DM 4N39
(I F = 10mA)
(R GK = 10KJ2, TA = 100C) 4N40
fPeak Reverse Voltage - V RM
4N39

f Reverse Current

10

coupled

50

microamps

picofarads

1MHz)

UNITS

200
400
200
400

volts

1.3

volts

50

microamps

150

microamps

50

microampsl

150

microamps

200 microamps

volts
volts
volts

electrical characteristics (25 C)

MIN.

VAK
VAK

= 50V, Rg K = lOKfi
= 100V, RGK = 27Kft
Vj = 500V DG
t Isolation Resistance (Input to Output)
fTurn-On Time - VAK = 50V, I F = 30mA, Rqk = 1 0KI2, R L = 200ft
Coupled dv/dt, Input to Output (See Figure 13)
Input to Output Capacitance (Input to Output Voltage = 0,f = 1MHz)
t Input Current to Trigger

tlndicates

MIN. MAX.

(T A = 100C)
4N40
t On-State Voltage - V T
(I T = 300mA)
4N39
t Off-State Current - I D
(VD =200V,TA =100CJF =O,R GK =10K)
4N40
t Off-State Current - I D
(V D =400V,TA =100C,I F =O,R GK =10K)
4N39
f Reverse Current I R
(V R = 200V, T A = 1 00C, I F = O)
4N40
t Reverse Current I R
(V R = 400V, T A = 1 00 C, I F = O)
t Holding Current - I H
(V FX = 50V,R GK = 27Kn)

(V R = 3V)

Capacitance
(V = 0,f =

450 milliwatts

t Linear Derating

amps

JEDEC

Registered Values.

'4

MAX.
30

FT
I
FT
I

14

50

gigaohms
microseconds

100

500

UNITS
milliamps
milliamps

volts/microsec.

picofarads

TYPICAL CHARACTERISTICS
4ISI 39-40

NORMALIZED TO
VAK

50 V

R GK =t0K
TA

R GK

-25-C
!

in

GK =300JL

IK

IK

Z>

<
3

I0K

-27K

.5

(t

IOK

a.

1.0

.A.

=^

(E

2
o

300

__

27K _^_

X
s^N

'

56 K

NORMALIZED TO

ftK

10
50
100
200
-ANODE TO CATHODE VOLTAGE - VOLTS

VAK

-60

FIGURE
VS.

1.

50V

R GK = IOK
T A ^25-C

-40

-20

INPUT CURRENT TO TRIGGER

TA

20
40
60
-AMBIENT TEMPERATURE-C

80

100

120

ANODE-CATHODE VOLTAGE
FIGURE

2.

INPUT CURRENT TO TRIGGER

VS.

TEMPERATURE
NORMALIZED TO

VflK =50V
R GK MOK
TA = 25C

300A

R GK
"i

6
IK

4
N ORMALIZ ED TO
v \K" 50V

im

<J

TH PERCE TILE

gk" ok

TA

*25'C

tt^

^-lOTH PERCENTILE

w#
<tq

^N
>

''

FIGURE

4.

S
^s

IOK

\] ^

27K

5"

20
40 60
100
200
PULSE WIDTH - MICRO SECONDS
10

400

IOOO

INPUT CURRENT TO TRIGGER

VS. PULSE WIDTH

20
40
60
SO
A -AMBIENT TEMPERATURE -"C

FIGURE 3. INPUT CURRENT TO TRIGGER

DISTRIBUTION VS. TEMPERATURE

IOOO

lo
Iff

Ks

r" r

a.

1
1

Vfl

R GK

v
\v

50 VOLTS

K
n

"d

U
a

*tr

" IK

.V

s\

^X

*K)K
56 K

"--^

._

0.1

.01

/ -~

VR - FORWARD VOLTAGE-VOLTS
I

FIGURE

5.

-INPUT CURRENT - MILLIAMPERES

TURN-ON TIME

VS. INPUT

CURRENT

FIGURE
542

6.

INPUT CHARACTERISTICS
l

F VS.

VF

TYPICAL CHARACTERISTICS OF OUTPUT (SCR)

4N33-An

IOO0

600
a 400

OF THE SCR ANODE LEAD

<2)

a.

AMBIENT TEMPERATURE MEASURED AT A POINT

1/2" FROM THE DEVICE

JUNCTION-^

Z
4

--

TO AMBIENT N,

JUNCTION

100

-"

*_40

"t
j

5*-v>
X
2.

ll,

0004

0001

FIGURE
40

20
T.

FIGURE

Q04

002

001

8.

ll

01
02
04
TIME-SECONDS

10

20

40

100

MAXIMUM TRANSIENT THERMAL

IMPEDANCE

60

-AMBIENT TF_MPERATURE-C

HOLDING CURRENT
TEMPERATURE

7.

VS.
10,000

5000

NORMALIZED TO
V
.50V
AK

TA -25'C

\\

\\

\
L

v\\

AMBIENT TEMP
HALF-SINE WAVE

AVG
400V

A\

\
\

/50V

AMB TEMP/
DC CURRENT
2

\
\

ANODE LEAD TEMP

1/2 SINE WAVE AVERAGE
6

0.4

ON STATE CURRENT

T A -AMBIENT

v^JVNODE LEAD TEMP

" OC CURRENT

AMPERES

FIGURE 10. ON-STATE CURRENT VS.

MAXIMUM ALLOWABLE TEMPERATURE

TEMPERATURE-*C

9. OFF-STATE FORWARD
CURRENT VS. TEMPERATURE

FIGURE

/
//
~4 y

.8
.6

_7 f

A
i

V)

R GK =300>n. -=*

&

2
<
I

-Ns

IK

s>

O.I

.08

06

tt

.04

1*J

<

N^

\^

I
JUNCTION TEMPERATURE = 25*C
1

z
',_

O.Ol

^*ns,27K

tZ
CREAS ES

IN

BF
I

ft

FIGURE

TO FOR WA iD

EAKOV ER VO LTA

3E

\56K
V

JUN CTI ON TENPE 1ATURE = 100'C

.02

-ON-STATE VOLTAGE -VOLTS

y

-AMBIENT TEMPERATURE -*C

11.dv/dt VS.

TEMPERATURE

543

FIGURE 12. ON-STATE

CHARACTERISTICS

4N39-40

TYPICAL CHARACTERISTICS

10A, T 2 L COMPATIBLE, SOLID

Use of the

4N40

STATE RELAY

470 .n.

IOO n.

-K3f~*"v

4N4C
for high sensitivity,

2500V

iso-

lation capability, provides this highly reliable solid

state relay design. This design is compatible with

74,

74S and 74H

and

220V AC

series

T2 L

logic

"coil"

VZ

CONTACT
220V AC

56K

systems inputs

IN3060(4)

loads up to 10 A.

INDICATOR

25W LOGIC INDICATOR LAMP DRIVER

470

LAMP

The high surge

capability and non-reactive input characteristics

of the 4N40 allow it to directly couple, without buffers, T 2 L
and DTL logic to indicator and alarm devices, without danger
of introducing noise and logic glitches.

LOGIC
INPUT

220VAC

400V SYMMETRICAL TRANSISTOR COUPLER

Use of the high voltage PNP portion of the4N40 provides a 400V transistor
capable of conducting positive and negative signals with current transfer INPUT
ratios of over 1%. This function is useful in remote instrumentation, high
voltage

power

ceed the 400

OUTPUT

supplies and test equipment. Care should be taken not to exdissipation rating when used at high voltages.

mW power

FIGURE 13

COUPLED dv/dt - TEST CIRCUIT

800 Volts

tp

=.010 Seconds

= 25 Hertz

+ IOO

T A =25C

lOO^l
,

VP

dV/dt

o-

544

!""J
r1
1

EXPONENTIAL

RAMP

VAC

GEN.

6-

0SCILL0SC0PE

[5T^^^aBliffijyl5SB<&.

ECONOMY
Metal Oxide Varistors
GE-MOV

Varistors are

perform

SERIES

voltage dependent resistors which

manner similar to back-to-back zener diodes,
protecting both AC and DC circuits from voltage transients
due to lightning and inductive kickback.
in

MAXIMUM RATINGS
C

-55

Storage Temperature

Average Power Dissipation*

CONTINUOUS
OPERATING VOLTS

CATALOG
NUMBER
AC14V
AC28V
AC42V
AC56V
AC 130V
AC250V
DC 14V
DC28V
DC42V
DC56V

to 125

75C
200 mw

Operating Ambient

PEAK IMPULSE

CURRENT
(Amps)

AC

DC

14
28
42
56
130
250

14

28

10

42
56

10

10
MILLIMETERS

10

SYMBOL

10
20
20

MIN.
7S

MK

31

68

G
J6U

INCHES
MIN
MAX

S3

39 Q

20
10

10
TIME (USECI

Derate

linearly

from

full rated value at

75C

to zero at 125C.

IMPULSE CURRENT

40.0

20.0

1000
1

800

APPLICAEiLE MO DE LS
AC 130 V
AC 250 V

kc5_

AMBIENT: 25 C

WAVEFORM

__,

:56\

20.0

600

tn

500

10.0

!!

4.0

rp

>
'

400

"c

rT

< 300
o
>
*C

LL

a.
O 200

3
Q.

r.6<^

fe;

a:

2.0

1.0

""

80
..

X
S

60

"' ===

50

.1

a.

D^r

@f

o
y

'Hi-

Ss

*2S# i

40,
.01

\T'*

nr.W

100

rfTp^

X/'lJx
XW^N

^o*
^^

PEAK VARIST0R CURRENT- AMPERES

8-10 ^SEC RISE TIME

PEAK CLAMPING VOLTAGE

20

100

DURATION OF IMPULSE WAVETAIL

PULSE LIFETIME
545

1000
M SEC)

1000
100
20
DURATION OF IMPULSE WAVETAIL (^ SEC
'

PULSE LIFETIME

LOW COST GE-MOV VARISTOR APPLICATIONS

CONTACT ARCING AND NOISE SUPPRESSION:
Switch contacts interrupting an inductive load current will
of the contacts and creating

arc, causing deterioration

terference-generating "spikes" on the

power

2.

in-

Determine the peak impulse current and wavetail duration (to one-half peak). Find the varistor's pulse

line. In circuits

life-

time rating.

where the arc voltage exceeds approximately three times

the peak of the steady-state voltage
this low-cost series

(AC rms

volts

3.

from the peak

of varistors can reduce these problems.

curves.

found particularly in circuits having

voltages below 120 V AC and inductive load
than a few hundred milliamperes. It should be

(This type of arcing

steady -state
currents less

maximum

Find the

1.4),

clamping voltage of the varistor

transient current and the characteristic

is

noted that the varistor

will prevent

DETERMINING PEAK CURRENT AND PULSE WIDTH

FOR COIL NOISE AND ARC SUPPRESSION:
1.
Peak transient current = maximum load current (i.e.,
100mA AC RMS has a peak of 141 mA = peak tran-

only that portion of the

which normally occurs at voltages greater than that

given on the varistor peak clamping voltage curve.)
arc

sient current.

POWER-LINE TRANSIENTS:
Electrical systems

powering electromechanical devices

frequently experience very brief and

transients, largely

random

2.

will

high-voltage

due to the arcing described above. These

Applying

solid-state

a low-cost

equipment or motor

GE-MOV

higher-voltage spikes,

by reducing them

by

may be

to a level given

voltage ratings,

its

by

resistance of the coil (R).

is

The dura-

then determined

(".=-).

where T

is

in milliseconds.

<-R

is

less

than one-third of that given by

NOTES:
its

steady-state

mode of the varistor is inherently to

Failure to an open circuit will occur if sufficient follow-on current is available.
The

catastrophic failure

fail short-circuited.

surge current ratings, and the given tem2.

The criterion for failure is arbitrarily chosen to be a change

on varistor voltage at 1 mA DC in excess of 10%. Catastrophic failure (to an open or short circuit) may ensue when

3.

Upward changes over

model having the varistor voltage rating (AC

or DC, as applicable) which is closest to, but higher

maximum

1.4

(Typically,

Select the

than, the

60 Hz a.c. voltage (v ac ), to the coil,

rms current (i ac ). With an ohmmeter,

the above inequality.)

perature limits.
1

<

ia

1.

reliably used within

DC

VARISTOR SELECTION:
varistor

measure the

these

the characteristic curves.

The

a.c.

from:

insulation.

Varistor to this equipment

provides economical protection against damage

a small

tion of the transient current pulse

transients will occasionally reach a voltage level potentially

damaging to

Applying

measure the

maximum

expected steady-state voltage ("high

line" condition).

imum

I
546

rating values are exceeded.

life

of

+10%

volt -ampere characteristic.

are not included in the

max-

A14B-M SEE PAGE

290

Passivated

A14 SERIES
Rectifier

AHA
2.5

50-100 Volts

Amps

A14F
A14U

THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED

GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PROVIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT
THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION OF THE
SILICON PELLETS PN JUNCTION ARE PROVIDED BY SOLID GLASS; NO
ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLY
SEALED PACKAGE.
.150

maximum

absolute

Reverse Voltage (-65 C to

Repetitive Peak,

ratings:
175

T.,)

(25c unless otherwise specified)

A14U A14F

V UUM

25
25

DC, V

Average Forward Current,

100 C Ambient
25

MAX,

(3.8IOMm.)

A14A

50
50

.180

Volts
Volts

100
100

MAX.

(4.572 Mm.)

IF

Amp
Amp

1.02.5-

feJ

050 MAX.
Mm.)

(1.270
1.0

MIN.

(25.400Mm.)

Peak Surge Forward Current

fc

.035 MAX
(.889 Mm.)

AFTER
TINNING

DIA.

Ifsm Non-repetitive
.0083 sec. half sine wave
,

Load JEDEC Method

No Load (25 C Case)

30
45

Full

ALL DIMENSIONS ARE

Amps
Amps

50
65

50
65

IN

INCHES

AND (METRIC)
*WELDAND SOLDER FLASH NOT
CONTROLLED IN THIS AREA

Peak Surge Forward Current,

Non-repetitive, .001 sec.
Half sine wave
Full

OUTLINE DRAWING

Load

No Load

(25

70
80

C Case)

Amps
Amps

90 90 90
100 100 100

Junction Operating and Storage

ccfn

Temperature Range
Ft,

RMS for fusing, .001 to .01 sec.

2.0

4.0

I7e:_,

4.0

Amps

Mounting: Any position. Lead Temperature 290 C maximum

from body for 5 seconds maximum during mounting.

electrical Characteristics:
Maximum Forward Voltage Drop, V F
T. = 25 C
IK,

Vis

inch

(25C unless otherwise specified)

,

2.5A,

Maximum Reverse Current,

to

1.25

1.25

1.25

Volt

at Rated

V, !M (rep)
Tj = 25 C
Tj = 175 C
:

Typical Reverse Current

Tj = 25 C
Tj = 100 C
Typical Reverse Recovery Time

Maximum Reverse Recovery Time

10

5.0

5.0

,uA

500

300

300

fiA

0.3

20

RA7

/J.A

fiA

ixsec

usee

Recovery circuit per MIL-S-19500/286C.

A14 SERIES

A14A
A14F
A14U

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

SINGLE PHASE
600

VOLTS & BELOW

PHASE HALF
WAVE RESISTIVE LOAD

AI4 SINGLE

TOTAL THERMAL RESISTANCE

A

t^jb '60 *C/W

HEAVY TIE LUGS OR

LARGE COPPER AREA
PC 80ARDS

N.A
6

B r 9jA

''O'C/W

TYPICAL THERMAL LUG

MOUNTING.

C"-n

-BO* C/W
TYPICAL PC BOARD
MOUNTING SMALL COPPER

C R ejA

AREA.

^^

.8

//

30

50

90

70

AMBtENT

(SEE

130

TEMPERATURE

; 5
*

u.

X
150

THERMOCOUPLE PLACED IN
SOLDERED JOINT OF LEAD
TO EXTERNAL HEAT SINK.

170

LEAD TEMPERATURE

AMBIENT OPERATION
TYPICAL MOUNTING BELOW)

TL

*C

OPERATION

TIE POINT

TYPICAL CHARACTERISTICS
40A

> FOR WARD

IOA

VOLTAGE

l-

z
u
a

o
a

.NO LOAD 25"C

I75TX/
rn'c^jy

MAX.
typ.

a:

i
F JU

X Al

tr.

IA

8
z

-TY 1CAL

Tl

MPERAT JRE

COEFf KIENT

nrp. tt'
1

MAX. 2! c

tj
CYCLES AT SO CYCLES PER SECOND
(>

MAXIMUM NON-REPETITIVE MULTICYCLE

FORWARD SURGE CURRENT

FORWARD CHARACTERISTICS

TYPICAL TIE LUG MOUNTS

^^

TYPICAL PC BOARD MOUNTING

1.0"

i.o"-

V^=^.
O
^

im

INSTANTANEOUS FORWARD VOLTAGE -VOLTS.

FORWARD TEMPERATURE COEFFKIENT-mv/'C

#20

WIRE

PERF BOARD

.056

GLASS EPOXY

PC BOARD

548

Passivated

A15 SERIES
Rectifier

A15A
5.0

Amps

50-100 Volts

A15F
A15U
A1SB-M SEE PAGE 294

THE GENERAL ELECTRIC A15 IS A 5.0 AMPERE RATED, AXIAL-LEADED

GENERAL PURPOSE RECTIFIER. ITS DUAL HEATSINK CONSTRUCTION
PROVIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION OF
THE SILICON PELLETS PN JUNCTION ARE PROVIDED BY SOLID GLASSNO ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLY
SEALED PACKAGE.

absolute

maximum

ratings:

A14 SEE PAGE 547

OUTLINE DRAWING

(25c unless otherwise specified)

Reverse Voltage (-65 to +175C T,)

Repetitive Peak, "Vrrm

DC,VR

A15U

A15F

A15A

25
25

50
50

100
100

(23.400 Mm.) * 16.3501.3941*3

.OKMIN

Volts
Volts

Average Forward Current, I F

(2.

1082

Mm.)

=5

an

*"

(6350*

.053 MAX. OIA.

70 C ambient, see rating curves

25C ambient, see rating curves

3.0

3.0

3.0

5.0

5.0

5.0

Amps
Amps

75

125

125

Amps

225

225

Amps

11.3462 Mm.)

tlNNEO COPPER WIRE

ALL DIMENSIONS ARE

IN

INCHES AND (METRIC)

Peak Surge Forward Current

non-repetitive
.0083 sec half sine wave
Full load JEDEC method

Ipsim

Peak Surge Forward Current

Non-repetitive .001 sec

Half sine wave

Full load 175 CT,
Junction Operating and Storage
Temperature Range

PT,

-65 to +175C

RMS for fusing .001 to .01 sec

25

25

Mounting: Any position. Lead temperature 290C maximum to

body for 5 seconds maximum during mounting.

electrical characteristics:

Tt
Tt

%" from

(25C unless otherwise specified)

Maximum Forward Voltage Drop

I F =5.0A,T A = 25C
Maximum Reverse Current, I B
at rated

Amp2 sec

1.2

1.1

1.1

Volts

VR

= 25C
= 175C

Typical I R at 25C
Typical Reverse Recovery Time,

TK
Maximum Reverse Recovery Time, Tn

10.0

5.0

5.0

/xA

500

300

300

/iA

2.0

1.0

1.0

ixA

2.5

2.5

/xsec

5.0

5.0

jusec

Recovery Circuit Per MIL-S-19500/286C

549

A15 SERIES

A15A

CIRCUIT DESIGN INFORMATION

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

A15F
A15U

SINGLE PHASE, RESISTIVE AND INDUCTIVE LOADS

e.o

--LEAD LENGTH -3/8"

L 20* C/W

^^*
L

TOTAL THERMAL RESISTANCE

R 6JA - 50'C/WATT
TYPICAL TIE LUG MOUNTING

/LEAD

S-

BOARD MOUNTING

w^

s
i

iS.

^-l.EAD LENGTH' 3/4"

"^\ **JL

30" C/W

3.0

1
K

I
.

2.0

OPERATION

TIE POINT
1.0

THERMOCOUPLE PLACED IN
SOLDERED JOINT OF LEAD
TO EXTERNAL HEAT SINK.
!

It

''

25* C/ W

R ejA -5"C/WATT

TYPICAL

1/2"

LENGTh

Ss^ * <<ML

2.TOTAL THERMAL RESISTANCE

30

70

SO

90

190

OPERATION

TIE POINT

AMBIENT OPERATION

130

1(0

TEMPERATURE- "C

TIE POINT

&MBIENT TEMPERATURE DEG. C

(See Tie Point Mounting Below)

TYPICAL CHARACTERISTICS
looy^
I75"C

//maximum

10

150

<
i

100

c
3

FULL LOAD

O
AISF

25"C
AI5A

50V

10 OV

1.0

5
*

25

<

CYCLES AT 60 CYCLES PER SECOND

MAXIMUM NON-REPETITIVE

0.1

MULTICYCLE FORWARD SURGE

CURRENT
"

INSTANTANEOUS FOWARD VOLTAGE-VOLTS

FORWARD
CHARACTERISTICS

100
300
200
INSTANTANEOUS REVERSE
VOLTAGE-VOLTS

400
,

REVERSE
CHARACTERISTICS
\
\

-1

Hi

TYPICAL TIE LUG MOUNTS

U
i.o"

Vk^W
IF^JF
~PERF

BOARD

TYPICAL PC BOARD MOUNTING

O
^:
.056

GLASS ECOXV

PC BOARD
(
1

550

EAK REV ERS

VO LTAG E-

7o
C

It

VOLTS

JUNCTION CAPACITANCE

A27 SERIES SEE PAGE 278

Rectifier

A28.9*

A38 SERIES SEE PAGE 282

12AAVG.

V RRM Up to 400V

Reverse polarity type

Features:
Fast Recovery Time

100 Nanoseconds

...

Maximum

Recovered Charge Characteristics

Shown on Charts 1, 2, and 3

The Fast Recovery Characteristics of the A28/A29 Match
Frequency Capability of the
such as the C140 and C141.

New

High

the

General Electric High Speed SCR's,

For Use in
Inverters

Sonar Power Supplies

Choppers
Ultrasonic Systems
Low RF Interference Applications
Free Wheeling Rectifier Applications
DC To DC Power Supplies

maximum

allowable ratings

(Resistive or Inductive Load)

Maximum Repetitive and Working Peak Reverse Voltage*,

V RRM

V R w.m, T, = -65C to +175C

Maximum RMS Voltage*, T. = -65C to +175C,V
Maximum DC Blocking Voltage**, T, = -65C to +125C, V R
Maximum Average Forward

A28B
A29B

A28C
A29C

A28D
A29D

50

100

200

300

400

Volts

35

70

140

210

280

Volts

50

100

200

300

400

Volts

C)

Current (Single Phase,

T =
12

-.

= -65C

Ft Rating

Maximum Peak One Cycle Surge Current,

Tj

A28A
A29A

and

-)-135

A28F
A29F

to

+175C,

60 Cycle Non-Recurrent,

240 Amperes

I F8M

<t<.008 second) T, = -65C to +175C

Maximum Full Load Forward Voltage Drop, Single Phase
Cycle Average, I = 12 Amp. at T = +135C, V F(AV
(.001

Amperes

^67 Ampere

second Min. Rating-^

Full

0.7 Volts

Maximum

Reverse Current at Full Load, Single Phase Full Cycle

Average, I = 12 Amp. at T = +135C, I, ;(AY1
Effective

Thermal Resistance (Junction

to Case)

Junction Operating and Storage Temperature Range, T.

Reverse Recovery Time (see reverse side)***,

R MC

& T STG

2.0C/W

100 Nanosec. Max.

Min. 15

-.

+175C

65C

-<

t rr

Stud Torque

mA

8.0

Maximum

to

in-lbs.

Max. 20

in-lbs.

(Min. 17 Kg-cm; Max. 23 Kg-cm)

*Rating assumes

"Rating assumes

rectifier
rectifier

heatsink

heatsink

< 3C/W at max.

< 6C/W at max.

Tr. If

max. operating

T.,

<

150C, rectifier heatsink can be

< 6C/W.

T.r.

***Recovery characteristic factory test point:

Ifm

NOTE

5.0

Amp.; di/dt

50

Case Temperature, Tr,

Amp./ M sec; T r

is

+25C;

tr r

measured at the center of any

100 nanoseconds max.; I (recovery)

on the hex base.

flat

551

= 4.0 Amperes max.

RECOVERY SPECIFICATIONS AND INFORMATION

A28,9*

In most power circuits where the rectifier reverse loop

are essentially as shown below

L/R

is

large, the

A28/A29 recovery

characteristics

di/dtViw/L FOR APPLICATION IN WHICH A28/A29IS

USED AS A "FREE WHEELING" RECTIFIER AS FOR

EXAMPLE IN A DC CHOPPER CIRCUIT.

@H:

-CIRCUIT

INDUCTANCE

SCR

[,.I

LUMPED

V|N^

TIME

LOAD

R (RECOVERY)

WHEN A28/A29 IS USED IN RECTIFIER

CIRCUITS WITH SINUSOIDAL INPUT VOLTAGES
AND RESISTIVE LOADS.
<Ji/dte2Tt f l FM

the curves of recovered charge, Q K (Charts 1, 2, 3), recovery time and peak recovery current (as
defined above) may be very closely approximated using the following formulas if the application, I u
(recovery), di/dt, and A28/A29 operating junction temperatures are known.

From

IK

(recovery)

\/2

u=

Q R di/dt

2Q

di/dt

NOTE: At

high values of di/dt, reverse voltage transients may be generated that will destroy the A28/A29 especially with
high values of I and Tj. In these cases R-C suppression should be connected across the A28/A29.
-'-

Tj> IOO-C

Tj= 25C

-~^40A

40A

1.
20A

^-^-^r~
7s~^

If *

01

V,

lFM=5A

5A

s
'F

Z&^
V*

MDA

V,

di/dt

di/dt

wi

:::

-^
;

'R

\
\

di/dt IN AMP/>js

di/dt IN

1.

AMP^it

Recovered Charge Curves (Tj

Recovered Charge Curves

2.

= +25C)

40A
Tj" I75"C
II

20A

r )A

'fm

>A

,^Z^"

-Ifm

\j

di/dt

'R

di/dt IN

3.

mP/ji*

Recovered Charge Curves

552

(T.T

= +175C)

(T.T

= +100C)

A28,9*

3*

22

//

100

20

ia

/
a:
a.

lie

%
,1

Tj
<>

7: -Tj
I75-C-

4.0

>

25C

a
ar

o
/
/

UJ

10

DC

12

io

1
o

7Z

Q.

__J

OM
I

0.01

5.

v F -INSTANTANEOUS
4.

FORWARD VOLTAGE -VOLTS

F(AV)" AVERAGE

FORWARD CURRENT-AMPERES

Average Forward Power as a Function of

Average Forward Current (Tj = +175C)

Maximum Forward Characteristics

CURVE APPLIES FOLLOWING

ANY RATED LOAD CONDITION

6*

3*

>

IC

DC

5
NO,

20
I F(AV) -AVERAGE

6.

22

24

26

FORWARD CURRENT-AMPERES

7.

Current Rating vs. Case

Temperature Curves

CURRENT PULSE DURATION -MILLISECONDS

8.

Non-Recurrent Sub-Cycle
Surge Forward Current

553

10

20

30

40

50

60

OF CYCLES AT 60 H;

Non-Recurrent Multi-Cycle
Surge Forward Current

A28,9*
16

l#^
!

"SJ*

NOTES:

3*^

3)

n*
ffi

13

4)

a.

2
<

(1)

FIN EMISSIVITY*90%

MOUNTED AT CENTER OF FiN

FIN MOUNTEO VERTICALLY
OR PARALLEL TO AIR

DEVICE

12

Q
at

10
Jjj

6*

6tf

FORCED CONVECTION
tf~~C0OLING 1000 FT/MIN

FREE CONVECTION COOLING

^
\\

^
\\\

NI
30

20

PEAK SQUARE WAVE FORWARD POWER "ON" TIME-SECONDS

40

50

0 70 80 90 IOO 110 120

TA -AMBIENT TEMPERATURE -"C

130

140

150

BO

170

180

DC Transient Thermal Impedance,

9.

Junction to Heatsink

Current Rating as a Function of

10.

Ambient Air Temperature for Device

Mounted on 5" x 5" x .050" Copper Fin

OUTLINE DRAWING

INSULATING HARDWARE
KIT*

DIRECTION OF EASY CONVENTIONAL

Qtfs

CURRENT FLOW A28

10-32

UNF-2A
0t

DIA-,
i.

(D
.078^

10-32 STEEL NUT

CADMIUM PLATED
LOCKWASHER,

^.080 R

DIA.

CADMIUM PLATED
STEEL

COPPER TERMINAL, OI6

--H

COMPLIES WITH
EIA REGISTERED OUTLINE D0-4

THICK, TIN PLATED

BRASS WASHER..035 THICK
NICKEL PLATED
(f)MICA WASHERS, TWO, .625
.204 D.,.005 THICK
TEFLON WASHER..270 O.D.
.204 D.,.050 THICK
* AVAILABLE UPON REQUEST
O.D.,

I.

INCHES

SYMBOL

MIN.

I.

MIN.

.405

E
F

.424
.075

MAX.

10.77

.437

10.77

.175

1.91

11.10
4.45

.800

20.32

.250

6.35

.422
.060

<f>t

.453

NOTES

10.29

.424

4>T>

MILLIMETERS
MAX.

10.72

11.51

1.52

NOTES:
1.

2.

Angular orientation of

this terminal is undefined.

10-32 UNF-2A. Maximum pitch diameter of plated threads shall be basic
pitch diameter (.1697", 4.29 MM) Ref. (Screw thread standards for Federal
Services 1957) Handbook H28 1957 PI.

554

Silicon

A44F,M

Rectifiers

A45F,M
A40 SERIES SEE PAGE 230
A70 SERIES SEE PAGE 234

General Electric has designed this 20 Ampere rectifier specifically for the light industrial and consumer
low ambient temperature applications. The design utilizes the smallest practical size for the rating with
particular attention to rigidity and rugged construction. The solid one-piece terminal
provides good
mechanical strength, and minimizes breakage problems.

High Surge Current Capabilities (Up

to

300 Amperes)

One-Piece Terminal
Reverse Polarity Devices Available

Small Size

OUTLINE DRAWING

STRABHT KNURL

uqoiA

CATHODE

DIRECTION OF EASY CONVENTIONAL CURRENT FLOW

{FORWARD POLARITY DEVICES)

.505
SOI
(O.D.OF KNURL)

RATINGS

AND

CHARACTERISTICS

(Single Phase Resistive Load)

Forward Polarity

A44F

A44A

A44B

A44C

A44D

A44E

A44M

Reverse Polarity

A45F

A45A

A45B

A45C

A45D

A45E

A45M

50
50
35

100
100
70

200
200
140

300
300
210

400
400
280

500
500
350

600
600
420

Max.
Max.
Max.
Max.

Peak Reverse Voltage

Continuous D-C Reverse Voltage
Sine Wave RMS Voltage
Avg. D-C Forward Current
At 110C Case
At 150C Case
Peak One-cycle Forward Surge Current
(60 cps, T J
25C)
Ft Rating for Fusing or Capacitor Inrush
Max. Forward Voltage at 20 Amps D-C
Forward Current (T.T = 25C)
Max. Avg. Forward Voltage Drop
(15 amps d-c single phase, Tj = 150C)
Max. Reverse Current at Rated D-C Reverse
Voltage (Tj
25C)
Max. Full Load Reverse Current (full cycle avg.,
single phase, Tj
150C)

20 amps

-<

15

100

10

1.5C/watt

4.5

4.0

>

ma

-65Cto+175C
-65Cto+175C

RECOMMENDED MOUNTING PROCEDURE FOR

4.

sec

1.0 ma

3.

amp 2

0.75 volts

Typical Thermal Resistance (junction to case)

Operating Junction Temperature Range
Storage Temperature Range

>

1.2 volts

2.

volts

300 amps

When

amps

volts
volts

PRESS-FITTING IN

A HEATSINK

press-fitting these

diodes into a heat sink, the following specifications and recommendations apply.
The heatsink thickness should be at least '/".

The hole diameter into which the diode is pressed should be 0.4975
.001 inches. A slight chamfer of the hole should be used.
The entire knurled section of the diode should be in contact with the heatsink to insure maximum heat removal.
The diode insertion force should not exceed 800 pounds. This force should be uniformly applied to the top face of the diode within an annular
ring of diameter .44
.05 inches.

5.

The thermal resistance between the diode case and the heatsink

will not

555

exceed 0.5C/W

if

the diode

is

installed in the

manner described above.

M
A45F, M

A44F,

1000

Tj25C
i^,si7\*r
CO
UJ
IE
UJ

100

Q.

<
E
IE

O
Q
IE

10

I
IE

O
CO

o
UJ

to

1.0

12

0.1

AVERAGE
1.

4.0

3.5

12

20

16

AND THREE PHASE CURRENT RATING

AS A FUNCTION OF STUD TEMPERATURE

SINGLE PHASE

A45P. A44A.A45A
100 PRV
A A44B.A45B
A44C,A45C
200 P W^/** 300 P
...

A44D. A4SD
P RV

\\

A44E. A45E_
SOO P V

3.0

o
2.5

\\
\ \

130

44 M,
SM 60 PRV

2.0

jg

120

no

3\
A

^100
CO

>

iu

1.5

~~

a.

3
o
z

FORWARD CHARACTERISTICS

TYPICAl

2.

A44F 50 PRV

400

CO

INSTANTANEOUS FORWARD VOLTAGE -VOLTS

FORWARD CURRENT- AMPERES

90

111

\
I PEAK

1.0

TSTOIASE

2
ia

\
12

KU

CTION PROCCOURE
NOTE: FOR SURK ftUMTOR
SEE 'RECTIFIER COMPONEN1 rs guide*
(PUBLICATION 6404) SECT*
e.

200

100

INSTANTANEOUS
3.

300

400

500

600

(Tj

10

12

14

IS

16

AVERAGE FORWARD CURRENT - AMPERES DC

REVERSE VOLTAGE - VOLTS

TYPICAL REVERSE CHARACTERISTICS

= 175C)
556

4.

HALFWAVE CAPACITIVE LOAD RATING

20

Fast Recovery Rectifier

A114A
A114F

2.0

Amps

50-100 Volts

THE GENERAL ELECTRIC A114

IS A 2.0 AMPERE, AXIAL LEADED, FAST

RECOVERY RECTIFIER. DUAL HEATSINK CONSTRUCTION PROVIDES
RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION OF THE PN
JUNCTION OF THE SILICON PELLET ARE PROVIDED BY SOLID GLASS;
NO ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLY-

SEALED PACKAGE.

absolute

maximum

ratings:

(25c unless otherwise specified)

A114F A114A
Reverse Voltage

-65C

to

+150C, Tj)

Working Peak, V RWM

Repetitive Peak, V RRM

100
100
100

50
50
50

DC,V R
Average Forward Current, I
75 C ambient (see Rating Curves)
25C

1.0

2.0

Volts
Volts
Volts

Amperes
Amperes

Peak Surge Forward Current, I PgM

CONTROLLED

Non-rep., .0083 sec, half sine wave,

Full load JEDEC method
Non-rep., .001 sec, half sine wave,
Full load
+150C, T,
Pt (for fusing), RMS
.001 to .01 seconds
Junction Temperature Range
Operating, Tj
Storage, T ST6

Mounting: Any

position.

ALL DIMENSIONS ARE IN INCHES

AND (METRIC)
*WELDAND SOLDER FLASH NOT

40

-*

85

3.5

Amperes

IN

THIS

AREA

OUTLINE DRAWING

Amperes

Amp

secs

-65Cto+150C
-65Cto+175C

Lead temperature 290C max.

to Va"

from body

for 5 seconds max. during mounting.

electrical characteristics:

(25C unless otherwise specified)

Maximum Forward Voltage Drop, V PM

I PM = 1.0A, T, = +25C
Maximum Reverse Current, I RM @ rated V I!M
Tj = + 25C
Tj = + 150C
Typical Reverse Recovery Time, t rr
Maximum Reverse Recovery Time,

500

500

t rr

Volts

1.1

140
200

Microamps.
Microamps.
Nanosecs.
Nanosecs.

Recovery circuit per MIL-S-19500/286C.

557

CIRCUIT DESIGN INFORMATION

A114A
A114F

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

SINGLE PHASE, RESISTIVE AND INDUCTIVE LOADS
AII4 SINGLE PHASE HALF WAVE
RESISTIVE LOAD

AII4-TIE POINT OPERATION

THERMOCOUPLE PLACED IN
SOLDERED JOINT OF LEAD
TO EXTERNAL HEAT SINK.

TOTAL THERMAL RESISTANCE

1.

&j,^eo a C/W

2.

LEAD LENGTH 3/8"

9j. L "37* C/W

20

HEAVY

TIE LUGS OR LARGE

COPPER AREA PC BOARD.
9j_ A =70 C/W
TYPICAL THERMINAL LUG

LI

MOUNTING.
eJ-A l80 C/w
TYPICAL PC BOARD

'

'

LEAD LEN6TH I/2"

^6. -4S - C/W
,

MOUNTING SMALL COPPER

LEAD LENGTH -3/4"

AREA

W J- L

**

I.O

-H

oW/AMBIENT TEMPERATURE -

TIE

*C

AMBIENT OPERATION

POINT TEMPERATURE-

TIE POINT

OPERATION

TYPICAL CHARACTERISTICS
...J,
I

/f"
J P

S ;"

7,
l/

--

T.PIC

._

100V
__

CYCLES AT 60 CYCLES PER SECOND

MAXIMUM NON-REPETITIVE
MULTICYCLE FORWARD SURGE
CURRENT

I
J,

/
I

i
JSTANTANEOUS P

FORWARD
CHARACTERISTICS

INSTANTANEOUS R

REVERSE
CHARACTERISTICS

f-

TYP CAL

TYPICAL TIE LUG MOUNTS

1.0"
U

TYPICAL PC BOARD MOUNTING

PERF BOARD

O
.056

GLASS EPOXY

PC BOARD

10

ZO

50

40

50

60

70

80

DC REVERSE VOLTAGE - VOLTS

JUNCTION
CAPACITANCE
558

90

100

A114B
Fast Recovery Rectifier

A114C
A114D

200-600 Volts

2.0 Amps

A114E

A114M

AMPERE, AXIAL-LEADED, FAST

CONSTRUCTION PROVIDES
HEATSINK
DUAL
RECTIFIER.
RECOVERY
RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION OF THE PN
JUNCTION OF THE SILICON PELLET ARE PROVIDED BY SOLID GLASS;
NO ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLYSEALED PACKAGE.

THE GENERAL ELECTRIC A114

absolute

maximum

IS

2.0

ratings:

Reverse Voltage (-65Cto

Working Peak, V RW m
Repetitive Peak, V RR m

+ 150C,

(25c unless otherwise specified)

A114B

A114C

A114D

A114E

A114M

200
200
200

300
300
300

400
400
400

500
500
500

600
600
600

T.T )

DC,V R
Average Forward Current, I
75C ambient (see Rating Curves)
25C
Peak Surge Forward Current, I FSM

Volts
Volts
Volts

()

-*

2.0

Non-rep., .0083 sec, half sine wave,

Full load JEDEC method
Non-rep., .001 sec, half sine wave,
Full load
Ft (for fusing),

-.

1.0-

+150C,T,

40-

Amperes

-85-

Amperes

RMS

Junction Temperature Range

Operating, Tj
Storage, T ST g

secs.

to

%" from body

for 5 seconds max. during

(25c unless otherwise specified)

Maximum Forward Voltage Drop, V FM

I FM = 1.0A, T A = +25C
Maximum Reverse Current, Inn @ rated V UM
Tj = +25C
Tj = +150C
25C
Typical I RM
Typical Reverse Recovery Time, t,,.
Maximum Reverse Recovery Time,

-65Cto +150C
-65Cto + 175C

Mounting: Any position. Lead temperature 290 C max.

mounting.

electrical characteristics:

Amp

3.5

.001 to .01 seconds

Amperes
Amperes

"
5

300

300

300

200

200

t,

Volts

-1.1-

140
200

Microamps.
Microamps.
Microamps.
Nanosecs.
Nanosecs.

Recovery circuit per MIL-S-19500/286C

559

A114B
A114C
A114D
A114E

CIRCUIT DESIGN INFORMATION

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

SINGLE PHASE, RESISTIVE AND INDUCTIVE LOADS

A114M

AII4 SINGLE PHASE HALF WAVE

RESISTIVE LOAD
TOTAL THERMAL RESISTANCE
.609j. A
C/W
HEAVY TIE LUGS OR LARGE
COPPER AREA PC BOARD
ej. 4 .70-

AII4-TIE POINT OPERATION

-EAD LENGTH

3/8"

C/W

9 J-L

C/W

TYPICAL THERMINAL LUG

MOUNTING.
eJ-A" 80 * C/*
TYPICAL PC BOARD
MOUNTING SMALL COPPER

SOLDEREO JOINT OF LEAD

TO EXTERNAL HEAT SINK.

LEAD LENGTH I/2"

C/W
6j.i

^.

LEAD LENGTH 3/4

Sj-L - S7* C/W

AREA

"

10

TO

90

MO

L-

I30

AMBIENT TEMPERATURE -

30

50

70

so

no

30

IS

'C
TIE

AMBIENT OPERATION

POINT

TEMPERATURE -'C

TIE POINT

OPERATION

CAPACITIVE LOADS
Current Derating (capacitive load)

Average forward current as specified under maximum ratings,

page 1,
and derating curves for high temperature operation, above,
must be
corrected for applications with capacitive loads.
As the current conduction angle, a', is decreased, the peak current
required to maintain the
same average current increases, i.e., the peak-to-average
current ratio
increases from 3.14. Figure 3 gives the derating
required based on
this increase in peak to average current
ratio for sine wave operation.
For more complete information consult Application
Note 200.30.

METHOD

1.

Determine conduction angle

a' in

PEAK

FORWARD
CURRENT

3.

AVERAGE
<r

degrees for particular

circuit as designed.
2.

Enter Figure 3 for the particular conduction angle

and
read corresponding percent of forward current
per cell.
Multiply this value times average forward
current for
resistive load from figures 1 and 2
as given for the
actual ambient or tie point temperature
required.

a'

CONDUCTION ANGLE (180)

SHORTENED CONDUCTION ANGLE

OSCILLOSCOPE PRESENTATION

See Typical Examples Below

TYPICAL EXAMPLES (25C Ambient Temperature)

Example

Example

Example

No. 2

Example

No. 3

No. 4

170

110

130

70

No.

Conduction Angle

(o)

Rated Average Current

(Resistive Load)

of Average Current

Rated Average Current

(Capacitive Load)

Units

Degrees

Amp.

0.98

0.86

0.92

0.73

0.98

0.86

0.92

0.73

Amps.

DERATING FOR SHORTENED

CONDUCTION ANGLE

560

A114B
A114C
A114D
A114E
A114M

TYPICAL CHARACTERISTICS

^^>*

300V

TYPICAL

<S2S'C

eoov
<S)

100

E
;

TYPICAL

10

/
1

i
\

/1
:

"

1.0

AII4B

AI14C

20OV

300V

All

AII4D

_400V _

sooy,

1,

^jA|I4M
eoov
1/
0.2

0.4

06

OB

10

1.2

1.4

1.6

IB

20 22

2.4

2.6

26 SO

INSTANTANEOUS FORWARD VOLTAGE -VOLTS

600

ZOO
300
400
900
INSTANTANEOUS REVERSE VOLTAGE - VOLTS

FORWARD CHARACTERISTICS

700

REVERSE CHARACTERISTICS

f UL

LOA B

^^

f.

MHI

TYPICAL

CYCLES AT 60 CYCLES PER SECOND

MAXIMUM NON-REPETITIVE
MULTICYCLE FORWARD SURGE

CURRENT

10

20

30

40

50

TO

80

90

100

DC REVERSE VOLTAGE - VOLTS

JUNCTION CAPACITANCE

TYPICAL PC BOARD MOUNTING

TYPICAL TIE LUG MOUNTS

i.o"

vi O
r^f?
F

PERF

^_*f

/5=

BOARD

561

o^

I
056 GLASS EPOXY
PC BOARO

A114B
A114C
A114D
A114E

A114M

<

o
z
<
tw
v>
UJ
(E

<
2

<c
UJ

x
K
I

<

'8

'2

3'4

LEAD LENGTH -INCHES

STEADY STATE THERMAL RESISTANCE

.150 MAX.
(3.810 Mm.)

t"

Marking band to appear

on cathode end.

.180

MAX.

(4.572 Mm.)

.050 MAX.
(1.270

1.0 MIN.

Mm.)

(25.400Mm.)
.035 MAX
(.889 Mm.

AFTER
TINNING

DIA.

ALL OIMENTIONS ARE IN INCHES

AND (METRIC)
*WEL0 AND SOLDER FLASH NOT
CONTROLLED

IN

THIS

AREA

OUTLINE DRAWING

I
562

Fast Recovery Rectifier

A115A
A115F
5.0

50-100 Volts

Amps

THE GENERAL ELECTRIC A115 IS A 5.0 AMPERE, AXIAL-LEADED, FAST

RECOVERY RECTIFIER. DUAL HEATSINK CONSTRUCTION PROVIDES
RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION OF THE PN
JUNCTION OF THE SILICON PELLET ARE PROVIDED BY SOLID GLASS;
NO ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLYSEALED PACKAGE.

absolute

maximum

ratings:

1.000

(25c unless otherwise specified)

A115F
Reverse Voltage (-65C to +1 50C, Tj)
Repetitive, Peak, V RRM

A115A

DC,V R

100
100

Average Forward Current, I

55C ambient (see Rating Curves)
25C ambient (see Rating Curves)
Peak Surge Forward Current, I FSM
Non-rep., .0083 sec, half sine wave,
Full load JEDEC method
Non-rep., .001 sec, half sine wave,
Full load @+150C,Tj

Volts
Volts

DIA.

(1.3462 Mm.)

3 CD

250m..
(6.350mm)

TINNED COPPER WIRE

.3.0
.5.0

Amperes
Amperes

_1 10

Amperes

.250* .010

* V3501. 3541*3

3 C
053MAX.

50
50

MIN.

I25.40O Mm.)

ALL DIMENSIONS ARE

IN

INCHES AND (METRIC)

Amperes

200.

RMS

1st (for fusing),

.001 to .01 seconds

Storage,

Mounting:

Amp 2 sees.

.20.0.

Junction Temperature Range

Operating, Tj

-65Cto+150C
-65Cto+175C

T STG
Any position. Lead

temperature 290C max.. to 1/8" from body for 5

seconds max. during mounting.

electrical characteristics:

Maximum Forward Voltage Drop, V FM

I FM =5.0A,T J = +25C
Maximum Reverse Current, I RM @ rated V RM
Tj = +25C
Tj = + 150C
Typical Reverse Recovery Time, t n
Maximum Reverse Recovery Time,

Recovery

circuit per

t rr

Volts

,1.1.

500

500

140

200

MIL-S-19500/286C.

563

Microamps.
Microamps.
>

Nanosecs.
Nanosecs.

CIRCUIT DESIGN INFORMATION

A115A
A115F

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

SINGLE PHASE, RESISTIVE AND INDUCTIVE LOADS

^\a

A.Rg

^1/2

50C/WATT

JA
TYPICAL TERMINAL LUG
MOUNT NU

rN

^ X3/8

\^/4

"C/WATT

TYPICA L PC BOARD

MOUNT NG

3.0

SINGLE - PHASE, HALF-WAVf

RESISTIVE LOAD-TIE POINT

90

70

TEMPERATURE MEASURED
BY PLACING THERMOCOUPLE
IN SOLDER JOINT OF LEAD
TO EXTERNAL HEAT SINK

MO

AMBIENT TEMPERATURE1.

2.0

50

AMBIENT OPERATION

2.

TIE POINT

no

90

70

TIE POINT

TEMPERATURE-

OPERATION

TYPICAL CHARACTERISTICS
f

25-C

AXIMUM

^AllSA

AII5F

50V

iooy^

/'

I50'C

Y
\\
*

Hz

\
25-C
I.O

AII5F

AII5A

50V

100V

O.t

XJ XJ 4 U 3 J b U r
80 90
PEAK REVERSE VOLTAGE - OC VOLTS

100
200
300
400
INSTANTANEOUS REVERSE
VOLTAGE - VOLTS

I
0.2 0.4 0.6 0.8

1.0

1.2

1.4

1.6

1.8

2.0

INSTANTANEOUS FORWARD VOLTAGE -VOLTS

REVERSE
CHARACTERISTICS

100

JUNCTION
CAPACITANCE

FORWARD CHARACTERISTICS

^
FULL LOAD"""*-*.^

S^v^/.
ir^^
1

I-

"^

CYCLES AT 60 CYCLES PER SECOND

-PERF BOARD

(r

O
"^\
.056

GLASS EPOXY

PC BOARD

MAXIMUM NON-REPETITIVE
MULTICYCLE FORWARD
SURGE CURRENT

TYPICAL TIE LUG MOUNTS

564

TYPICAL PC BOARD MOUNTING

A115B

Fast Recovery Rectifier

A115C
A115D
5.0

Amps

200-600

Volts

A115E

A115M
THE GENERAL ELECTRIC A115

IS A 5.0 AMPERE, AXIAL-LEADED, FAST

RECOVERY RECTIFIER. DUAL HEATSINK CONSTRUCTION PROVIDES
RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION OF THE PN
JUNCTION OF THE SILICON PELLET ARE PROVIDED BY SOLID GLASS;
NO ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLYSEALED PACKAGE.

absolute

maximum

ratings:

Reverse Voltage (-65C to +150C, Tj)

Repetitive Peak, V RRM

DC,V R

(25C unless otherwise specified)

A115B

A115C

A115D

A115E

A115M

200
200

300
300

400
400

500
500

600
600

Average Forward Current, I F

55C ambient (see Rating Curves)
25C ambient (see Rating Curves)
Peak Surge Forward Current, I FSM
Non-rep., .0083 sec, half sine wave,
Full load JEDEC method
Non-rep., .001 sec. half sine wave,
Fullload@+150C, Tj

-3.0
_5.0

Amperes
Amperes

110

Amperes

200

Amperes

RMS

Ft

(for fusing),
.001 to .01 seconds

.20.0

Junction Temperature Range

Operating, Tj

T STG
Mounting: Any position. Lead
Storage,

temperature 290C max. to

Tj = +25C
Tj =+150C
Typical Reverse Recovery Time, t rr
Maximum Reverse Recovery Time,
circuit per

Volts

.1.1

300

300

200

200

.140

200

565

Amp 2 sees.

seconds max. during mounting.

300
t rr

MIL-S-1 9500/286

.-65Cto+150C
.-65Cto+175C
1/8! from body for

electrical characteristics: (25c unless otherwise specified)

Maximum Forward Voltage Drop, V FM
I FM = 5 .0A, T A = +25C
,
Maximum Reverse Current, I RM @ rated V RM

Recovery

Volts
Volts

Microamps.
Microamps.
Nanosecs.
Nanosecs.

A115B
A115C
A115D
A115E

CIRCUIT DESIGN INFORMATION

MAXIMUM ALLOWABLE DC OUTPUT CURRENT RATINGS

SINGLE PHASE, RESISTIVE AND INDUCTIVE LOADS

A115M
2.5

^\a

AR
'

\l/2

c50 c/WATT
ejA

^ 0/8

^^3/4

TYPICAL TERMINAL LUG

MOUNT NG

BR ejA=6!) C/WATT

Is,

TYPICA L PC BOAR

MOUNT ING

SINGLE - PHASE, HALF-WAVE

RESISTIVE LOAD -TIE POINT

TEMPERATURE MEASUREO
BY PLACING THERMOCOUPLE
IN SOLDER JOINT OF LEAD
TO EXTERNAL HEAT SINK

50

70

90

no

AMBIENT TEMPERATURE-

50

70

TIE POINT

AMBIENT OPERATION

TIE POINT

90

no

TEMPERATURE-

OPERATION

CAPACITIVE LOADS
Current Derating (capacitive load)

Average forward current as specified under maximum ratings, page 1,

and derating curves for high temperature operation, above, must be

PEAK

corrected for applications with capacitive loads. As the current conduction angle, a, is decreased, the peak current required to maintain the

FORWARD
CURRENT

same average current increases, i.e., the peak-to-average current ratio

increases from 3.14. Figure 3 gives the derating required based on
this increase in peak to average current ratio for sine wave operation.
For more complete information consult Application Note 200.30.

METHOD:

1.

Determine conduction angle

a' in

degrees for particular

circuit as designed.
2.

3.

AVERAGE

i-*-

a'-

Enter Figure 3 for the particular conduction angle and

read corresponding percent of forward current per cell.
Multiply this value times average forward current for
resistive load from igures 1 and 2 as given for the
actual ambient or tiepoint temperature required.

a-

CONDUCTION ANGLE (180)

SHORTENED CONDUCTION ANGLE

OSCILLOSCOPE PRESENTATION

See Typical Examples Below

TYPICAL EXAMPLES (25C Ambient Temperature)

Example Example Example Example
No. 1
No. 2
No." 3
No. 4

Conduction Angle

(a)

Rated Average Current

170

110

130

70

0.98

0.86

0.92

0.73

2.9

2.6

2.8

2.2

Units

Degrees

Amp.

(Resistive Load)

of Average Current

Rated Average Current

(Capacitive Load)

%
Amps.

i
10

566

20

30

40

60 70 80 90 100 110 120 130 140 150

FORWARD CONDUCTION ANGLE IN DEGREES-a

50

160 170 180

DERATING FOR SHORTENED CONDUCTION ANGLE

A115B
A115C
A115D
A115E
A115M

TYPICAL CHARACTERISTICS

100

f 25C
AXIMUM

jS

^
^^

'

00v

nn
-

~^zj-

fr
*r

100
E

S
o

it

ISO'C

'-

>
26ov

(C

o
z
\\

<

400V

T 0|

0.1

^*^ 600VX

If
I

/
1

O.OI
1

0.2 0.4 0.6 0.6

I.O

1.

I.4

I.6

I.8

200
400
aoo
600
iooo
INSTANTANEOUS REVERSE VOLTAQE-VOLTS

1200

2.0

INSTANTANEOUS FORWARD VOLTAGE -VOLTS

FORWARD CHARACTERISTICS

REVERSE CHARACTERISTICS

90
,

70

60

50

<

\
\

Hi

y
o

\
s

FULL LOAD***>v^

>

i>

p EAK

CYCLES AT 60 CYCLES PER SECOND

MAXIMUM NON-REPETITIVE
MULTICYCLE FORWARD SURGE CURRENT

567

3i

5V

REV ERSE VO -TAG E-

10

D C VO TS

JUNCTION CAPACITANCE

A115B
A115C
A115D
A115E

25

A115M
20

15

10

n
I/8

V8

I/4

I/2

LEAD LENGTH

L,

5/8
3/4
INCHES

7/8

I.O

STEADY STATE THERMAL RESISTANCE

v O 5^
r^fr
"PERF

o
~^:

BOARD

.056

GLASS EPOXY

PC BOARD

TYPICAL TIE LUG MOUNTS

TYPICAL PC BOARD MOUNTING

OUTLINE DRAWING

053MAX.

~?

DIA.

(1.3462 Mm.)

* ^6.350*3541*3

<25.400Mm.)
.083 MIN.
(2.1082 Mm

i_

13 9

250MAX
(6.350 mam)

TINNED COPPER WIRE

ALL DiMENS IONS ARE

568

IN

INCHES AND (METRIC)

Fast Recovery

A139

Rectifier

The General Electric Type A139 Series of power rectifier diodes is designed for use in applications
where a fast recovery rectifier diode is a necessity. The A139 is rated up to 10,000 Hertz. It is
available in both forward and reverse polarity versions.

FEATURES:
High Voltage - up to 1000 V
Fast Recovery Time - 500 Nanoseconds Maximum
The Fast Recovery Characteristics of the A139 Match
Electric High-Speed

For Use

SCR's such

as the

the High Frequency Capability of General

C140, C141, C138, C139, and C144.

in:

Inverters

Sonar Power Supplies

Ultrasonic Systems

Choppers

Low RFI

Applications
DC-DC Power Supplies
Free-Wheeling Rectifier Applications

OUTLINE DRAWING
INCHES
MIN.
MAX.

SYMBOL
A

.450

11.43

.375

9.53

.080

2.03

4>D

16.94

16.94

17.45

2.92

5.08

.667

.667
.687

.115

.200

Fl

.060

DIRECTION OF FOWARD CURRENT FLOW:

FORWARD POLARITY
H

MILLIMETERS
NOTES
MIN.
MAX.

H REVERSE

POLARITY

TERM.

NOTES:
1.52

1.000

COMPLETE THREADS TO EXTEND TO WITHIN 2-1/2

THREADS OF SEATING PLANE.
ANGULAR ORIENTATION OF TERMINAL IS UNDEFINED.
3. 1/4-28 UNF-2A. MAXIMUM PITCH DIAMETER OF PLATED
THREADS SHALL BE BASIC PITCH DIAMETER (.2268", 5.74MM)
REF. (SCREW THREAD STANDARDS FOR FEDERAL SERVICES
1957) HANDBOOK H28 1957 PI.
I.

25.40

2.

.156

<^M

.220

.249

5.59

N
*t

.422

.453

10.72

11.51

.140

.175

3.56

4.45

3.96
6.32

4.

MINIMUM FLAT.

EIA-NEMA STANDARD OUTLINE NEMA SK-51 - EIA RS-241.

INSULATING HARDWARE IS AVAILABLE UPON REQUEST.
,

1,3

COMPLIES WITH EIA REGISTERED OUTLINE DO-5

The

fast recovery,

performance

A139, medium-current

rectifier

rectifier diode provides a superior combination of speed and blocking voltage capability. This high
diode has been designed specifically for demanding, medium-current, high voltage applications.

ratings and Specifications

Forward

Polarity:

Reverse Polarity:

(Resistive or Inductive

A139E
A139ER

Load)

A139M
A139MR

A139N
A139NR

A139P

A139PR

Maximum

Allowable Repetitive
and Working Peak Reverse
Voltage V RM (rep) & V RM
(wkg.)(D

Maximum
age,

RMS

Allowable
r

Maximum

Allowable

Voltage,

VR

DC

500

600

800

1000

Volts

355

424

565

710

Volts

500

600

800

1000

Volts

600

720

960

1200

Volts

Volt-

Blocking

(1)

Maximum
tive

Allowable Non-RepetiReverse Voltage, V RSM

Maximum

Allowable Average Forward Current (180 conduction

angle,

current

Maximum
Cycle

60

half sine

Tc =

wave

75C),

25

Amperes

Allowable Peak One

Surge Current (non-

recurrent),

cps,

at

400 Amperes

FM (surge)

General Electric Co., 1968

569

ratings and specifications

A139

Forward

A139E
A139ER

Polarity:

Reverse Polarity:
I

2 t Rating (for

and

(cont'd)

A139M
A139MR

A139N
A139NR

greater than .001

than .0083 sec,

non-recurrent)
sec.

less

Maximum Peak Forward

Drop

(I

?5C),

V FM

Maximum
rent

(I

= 25

Adc

500 Ampere 2 seconds

Voltage
at T c =
1.85 Volts Peak

Average

Reverse Cur= 25 Adc at T = 75

c

c ). Ir(av)
Maximum Reverse Recovery Time
trr

3.0

,2)

Maximum

Thermal Re-

Junction

to

Case

R0JC

1.0 deg.

Junction Operating Temperature

Range, Tj
Storage Temperature Range,

Maximum

to

+200C

30 Lb-in (35 Kg-cm)

thermal resistance, case to ambient, for which
Voltage Type
50
Sinusotdal Voltage:
14.0
C Voltage
3.7

Reverse recovery time measured at

To prevent

per watt
o

-40C

(3)

-40Cto+125 C

T stg

Stud Torque

(2)

mA

500 Nanoseconds
Effective

sistance

(1)

A139P
A139PR

possible device

micro second maximum.

Tc

= 25C with

damage during

FM

maximum

voltage and temperature ratings apply

600

800

1000

12.0
3.0

9.0
2.0

7.0
1.4

is:

Volts
C per watt
C per watt
= 5.0 Amp., commutating di/dt = 50 Amp//isec, max. reverse recovery current = 15

reverse recovery,

An RC Snubber connected

it is

recommended

across the rectifier diode

that the rate of rise of reverse voltage be limited to 1200 volts per
be used to limit the rate of rise of reverse voltage.

may

I000
I2C

p'^Zj^i

tt

3
1-

100

d.

6^>
Si

<

1*

3?*

70

ac**
_J

a
o

so

< 40

NOTE

FREQUENCY

20

(>

IC

1!

23

AVERAGE FORWARD CURRENT

AVERAGE CURRENT RATING

60Hz

AMPERES

VS.

CASE TEMPERATURE

~y
rsjs

45

Ma

40

12

'*

7.F,

6*

INSTANTANEOUS FORWARD VOLTAGE

V)

VOLTS
in

MAXIMUM FORWARD CHARACTERISTICS

?o

NOTES: l. UNCTION T EMPERATU =*E=I23'C

^REQUENC "60HI
5
"

AVERAGE FORWARD CURRENT

MAXIMUM AVERAGE FORWARD POWER

570

Amp.

DISSIPATION

High Power

Silicon

Rectifier

100A Avg.

1500 Volts

The A170 Series is General Electric's highly reliable, all-diffused Pic-Pac

100 ampere silicon rectifier diode, similar to 1N3288-1N3297 Series.

This series of rectifier diodes is particularly suited to a wide range of indus

performance rectifiers.
trial applications, especially those requiring high

FEATURES:

TYPICAL APPLICATIONS:

Thermal Fatigue Resistant Pic-Pac

Construction

Cathode Strain Buffer

Soft Recovery

Transportation Equipment

DC Motor
DC Power

Battery Vehicles

Control
Supplies

VRRM

1500 Volt

Hermetic Package

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

REPETITIVE PEAK 1

REVERSE VOLTAGE

TYPES*

V RRM
Tj = -40C to +200C

A170A
A170B
A170C
A170D
A170E
A170M

100 Volts

200
300
400
500
600
700
800
900

A170S

A170N
A170T
A170P
A170PA
A170PB
A170PC
A170PD
A170PE

1000
1100
1200
1300
1400
1500

NON-REPETITIVE 2

PEAK REVERSE
VOLTAGE, V RSM

C
Tj = 25C to +200 C

200 Volts
300
400
525
650
800
925
1050
1175
1300
1400
1500
1600
1700
1800

DC REVERSE 3
VOLTAGE, V R

C
Tj = -40C to +200 C

REPETITIVE PEAK
REVERSE CURRENT
rRM V RRM
C
Tj = 200 C

20
20
20
20
20
20
20
20
20
20
20
20
20
20
20

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

mA

Models listed are stud cathode (forward polarity) types. SpecifyA170R-for stud anode (reverse polarity) types. Ratings and specifications
are for frequencies from 50 to 400 Hz, except where noted otherwise.
I F(A v) (Tc = +130C, Single-Phase, Half Sine Wave)
100 Amperes
Peak One-Cycle Surge (Non-Repetitive), Forward Current, I FSM
2500 Amperes
Minimum I 2 t Rating (See Curve 6), t > 1 msec. (Non-Repetitive)
15,500 (RMS Ampere) 2 Seconds
Peak Forward Voltage Drop, VFM (T c = +130C, I F (av) = 100 Amps. Average, 314 Amps. Peak)
1.3 Volts
Thermal Resistance, R# JC (DC)
0.4 C/Watt

Average Forward Current,

10 & 30 (50 to 400 Hz)

60 (50 to 400 Hz)
Storage Temperature,

Tstg

-40C to +200C
-40C to +200C
90 Lb-in (Min.), 100 Lb-in (Max.)

Operating Junction Temperature, Tj

Stud Torque (See Mounting Guide)

NOTES:
1

Assumes

0.55C/Watt

0.72C/Watt

o.

N-m

(Min.),

1 1 .3

N-m

(Max.)

a heatsink thermal resistance of less than 2.0C/watt.

and current ratings, as contrasted to repetitive ratings, apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.
3 Assumes a heatsink thermal resistance of less than 1.0C/watt.

2 Non-repetitive voltage

4 "Pic-Pac"

is

an acronym for Pressure Internal Contact Package.

571

DEVICE SPECIFICATIONS

A170

3000
12000

<
i

1000

t-

Jj

300

a:

170

3 200

ioo

30

o
u.

WW

jj>

20

o
ui
z

10

3.0

Tj25

.5

1.0

i"

20

2.5
-

VOLTS

MAXIMUM FORWARD CHARACTERISTICS

vOC

'+

2.

40
60
80
100
120
AVERA6E FORWARD CURRENT- AMPERES

140

MAXIMUM CASE TEMPERATURE VS.

AVERAGE FORWARD CURRENT

/6*

3*/

6*.

120

3+V

+\
V

2.0

1.5

INSTANTANEOUS FORWARD VOLTAGE

1.

< 800

7i+

34/
<
600
a.

DC

"l*

<n

500
f,

60

400

DC

o
0.

a 300
a:

4
200

o
u.

100

20

10

30

40

50

60

AVERAGE FORWARD CURRENT

3.

70

80

90

50

AMPERES

100

200

150

AVERAGE FORWARD CURRENT

AVERAGE FORWARD POWER DISSIPATION

VS. AVERAGE FORWARD CURRENT

4.

250

AMPERES

AVERAGE FORWARD POWER DISSIPATION VS.

AVERAGE FORWARD CURRENT, HIGH LEVEL

100

o=
K

6*

5
p
q-

Uj

80

n
- 60
tfi

3w

- < 9 40

1"
w

fi

"

30

i*,3 *

JUNCTION TEMPERATURE- 2O0*C

REVERSE VOLTAGE-O

"

DC.

UJ

a: <r

I
1.006.01

.004

.061

.1

2.C

6..0|l0

4.0

TIME
5.

.4 .6.81.0

.2

.08

IN

20

8.0

360 |I00
80

TRANSIENT THERMAL IMPEDANCE -

6.

JUNCTION-TO-CASE

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATING VS. PULSE TIME
FOLLOWING RATED LOAD CONDITIONS
l

572

PULSE WIDTH-MILLISECONDS

SECONDS

MAXIMUM CIRCUIT RATINGS

5" x 5" x 1/8"

COPPER FIN (GE #12

1.

Minimum

2.

Fin e

3.

Fins

>

Fin Spacing

inch

0.9

Mounted

Vertically or

to Forced Air Flow

Parallel

^d^.

6$
1

FF.

EE

ON YE(,TIOI>

A170

FIN)

DC-

J!

>

"^2o^J
l

+ 5+1
.

6+
\

^r ^
2

41
|

1000 FT 'MIN

II

.8

DC TO 400 Hz
.4
1

001

004

.01

.04

.10

.40

TIME

7.

4.0

1.0

10

40

100

SECONDS

400 1000 4000

STEADY
STATE

100
60
80
120
AMBIENT TEMPERATURE

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-AMBIENT

8.

SINGLE-PHASE HALF-WAVE
(180C Conduction) VS.

140
C

FORWARD CURRENT

AMBIENT TEMPERATURE

k.
ft.

4o, ;
"^2go It,..

^S&

r^

s^o*"

^Oj,

20

60
80
100
120
AMBIENT TEMPERATURE

9.

THREE-PHASE FORWARD CURRENT

Conduction) VS.

80
100
120
60
AMBIENT TEMPERATURE

140
C

(120

10.

AMBIENT TEMPERATURE

SIX-PHASE

FORWARD CURRENT
VS.

573

140
C

(60

C Conduction)

AMBIENT TEMPERATURE

MAXIMUM CIRCUIT RATINGS

A170

7" x 7" x 3/8" ALUMINUM FIN (GE #13 FIN)

7" x 7" x 1/4" COPPER FIN
1.

Minimum

2.

Fin e

3.

>

Fin Spacing

Mounted

Fins

inch

0.9

Parallel to

Vertically or

Forced Air Flow

6*,-I

III

l+.3+^
FREE CONVECTION-^"!1*

Nfe

DC

6fl+.

3+
DC

HOOO
F

&>
>

^v
V

^^O

T/MIN

DC TO 400 Hz

.001

.004

.04

.01

.40

.10

1.0

4.0

40

10

100

4001000 4000

TIME- SECONDS

11.

or

i 70
<

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-AMBIENT

\
^
^k

^<&

z
LU

3
(J

60
80
100
120
AMBIENT TEMPERATURE

STATE*

12.

140
C

FORWARD
CURRENT (180C Conduction) VS.
AMBIENT TEMPERATURE

SINGLE-PHASE HALF-WAVE

fOh

^ ^^

&
v\

^<5

S*s

<^

^>

cr

o
tt*

20

<
rr

in

<

60
80
100
120
AMBIENT TEMPERATURE

13.

THREE-PHASE FORWARD CURRENT

Conduction) VS.

60
80
100
120
AMBIENT TEMPERATURE

(120

14.

AMBIENT TEMPERATURE

SIX-PHASE

FORWARD CURRENT (60 C

AMBIENT TEMPERATURE

Conduction) VS.

574

140
C

OVERLOAD RATINGS

REPETITIVE

FOR DIODES MOUNTED ON 7"

ALUMINUM

x 7" x 3/8"

A170

FIN (GE #13)

OR A
7" x 7" x 1/4"

COPPER FIN

CIRCUIT
1

OUTPUT CURRENT
6*
3+
+

BRK>GE BRIDGE _STAR_

"86
RATED CURRENT (100%)
120
FOR FREE CONVECTION
__ADC._ _AOC_
Tj - FREE CONVECTION
I47C
I45C
RATED CURRENT (100%)
108
147
FOE jOOO FT/MI_N_COOUNG_ ADC
ADC
T.i - 10 00 FT/MIN COOLING

*
3

2.0

186"

ADC
134-C

228
ADC

4>a34>

600
I000
I200
1400
800
COOLING AIR VELOCITY - FT/MIN

1600

2000

1800

.6.81.0

.4

OVERLOAD TIME

15.

STEADY-STATE THERMAL RESISTANCE

JUNCTION-TO-AMBIENT

40 60 100
80

20

4.0 6.0 10
8.0

2.0

200 400
1000
600
'

SECONDS

OVERLOAD CURVE MEETING

NEMA STANDARDS FOR "General Purpose

REPETITIVE

16.

Rectifier

KW" AT

Equipments Under 100

40C AMBIENT

NOTES:
1.

The

on the back cover was used to obtain the

mounted on any heat sink possessing:

repetitive overload calculation procedure outlined

16. This

method can be used when

a) a heat dissipation surface

the rectifier diode

shown by curve

ratings

is

of 100 square inches or more;

700 watt -seconds; and,

95% for free convection and 85%

b) a thermal capacity greater than

c) a fin efficiency greater than
2.

The

NEMA

standard cited in curve 16 specifies

200% output

for forced air cooling.

current for 10 seconds and

OUTLINE DRAWING

one minute.

Conversion Table

MAX.
1.140

Mil*.

1.020

.396

C
D

.500
1.730

4345
.500
.259
.320
.280
.060

K
L

M
N

.840
.920

R
T

for

TABLE OF DIMENSIONS
DECIMAL INCHES

SYM.
SEATING PLANE

150% output

1.052

4.745
.625
.281

METRIC
MIN.

28.98

110.36

120.52
13.20
7.14

12.70
6- 57

8.12
7.11

.090

9tS
LOSS

1.52

21.33
23.36

2* .72

NOTES

MAX.

25.90
9.90
39.87

.320
.940

MM
12.70

44.45

8.13

2.29
23.11

'SL
27.00

NOTES:

MODEL
AI70

FORWARD

TERMINAL

TERMINAL

ANODE

CATHODE

1.

THREAD

THREAD

RELIEF

2.

SIZE

LENGTH

DIAMETER

3/8

~^4

IN

4.

is

Material of

Steel-Cad Plated.

"R" Dimension
"T" Dimension

is
is

Diameter of Effective Seating Area.

Area of Unthreaded Portion. Complete Threads

are Within 2.5 Threads of Seating Plane.

AITOR

REVERSE

Hardware
3.

.373

.640

24

POLARITY

Flexible Copper Lead, 9/32 Inch Nominal Diameter.

One Nut and One Lockwasher Supplied With Each Unit.

UNF -2A

ANODE

CATHODE)

POLARITY

16.26

15^9

9.47

MM

5.

Angular Orientation of Terminals

6.

Approximate Weight: 105 Grams.

is

Undefined.

INSTALLATION INSTRUCTIONS
Following these installation instructions

will result in a diode-to-heatsink

1.

Be sure mounting surface

2.

Mounting hole diameter should not exceed

3.

Use

Dow

Coming's DC3,

is

thermal resistance of .10C/watt or

less.

clean and flat at (.001 inch/inch).

4,

340

or

rectifier stud

OD

by more than 1/16" and should be deburred.

640 or GE6332L or equivalent on mounting surfaces which come

with the heatsink.

4.

Use suitable hardware. (Nut and

5.

Tighten with a torque wrench, from nut side to 100

split

lockwasher are supplied.)

lb-in.

575

in contact

A170
REPETITIVE

OVERLOAD RATING DETERMINATION

FOR OVERLOAD CONDITIONS OTHER THAN SHOWN

IN

FIGURE

16

To determine the steady state current rating which will

accommodate a given repetitive overload rating (for diode
mounted on a 7 x 7 x 3/8" aluminum or 7 x 7 x 1/4"

repetitive overload equals

copper

overload. Substituting these values in the formula,

fin) the following

where

"cut and try" method is suggested:

Tj max. = TA + (P ss ) Rfl JA + (P OL -Pss) Zfl (t)

Tj max. = Max. Junction Temperature (200 C)
T A = Max. Ambient in C
P S s = Steady State Diode Power Dissipation

from curve 3

(reverse

losses

ignored).

R0ja = Steady

State Thermal Resistance

from curve 11.
Pol = Diode Power Dissipation (under repetitive overload conditions) from

From

approximation

Of

rated

diode current must be reduced. Using a reduced value of

steady state current as an estimate, the data for insertion
into the formula can be obtained from curves 3, 4 and 11.

When

the estimate

is

correct, the right side of the formula

given above will equal the

Example:

200%

maximum

repetitive

Tj, which

is

200C.

overload required for

10

seconds;
3-phase bridge;

convection cooled;

maximum ambient =

have:

.75

course, the 3-phase-bridge output current will be three

and 270 amps, or 200% current, for 10 seconds.

(see curves 12, 13, or 14).

maximum

- 40)

we

times the diode current, 135 amps average steady state,

Transient Thermal Impedance (under

overload conditions) from curve 11.

a repetitive overload rating, the

first

The answer of 175C indicates that our steady state selection was slightly low. By choosing 45 amps steady state
and 90 amps overload, we come closer to the maximum
rating permissible, based on Tj max. = 200C.

starting point, it is suggested that the steady state

diode current without repetitive overload current be deter-

To permit

56 amps/diode. Therefore, a

be 40 amps steady state and 80 amps

Tj max. = 175C

As a

mined

may

Tj max. = 30 + (40 x 2.55) + (97

curve 4.

z 0(t) =

curve 13, steady state rating without provision for

30 C.

I
576

'

High Speed

Fast Recovery Rectifier

1500 Volts

lOOAAvg.
4

The A177 series is General Electric's highly reliable, all-diffused, Pic-Pac,

100 ampere, fast recovery, silicon rectifier diode. These diodes are designed

where a fast recovery diode is a

combination of speed, blocking
voltage capability and soft recovery, which is required in such demanding
for use in high frequency applications or

necessity. These diodes provide a superior

applications as:

FEATURES:

Feedback Diode

Inverter

Free Wheeling Diode

High Frequency Rectification

Low EMI Power

Supplies

Up To 20,000 Hz

Published Current Ratings

All-Diffused

4
Thermal Fatigue Resistant Pic-Pac Construction

Cathode Strain Buffer

Soft Recovery With Low Recovered Charge

Rugged Hermetic Package

Available in 3/8" or 1/2" Stud

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

REPETITIVE PEAK
REVERSE VOLTAGE
v rrm

TYPES*

Tj = -40C to +125C

A177A

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

A177B
A177C
A177D
A177E

A177M
A177S

A177N
A177T
A177P
A177PA
A177PB
A177PC
A177PD
A177PE
Models

listed are stud

are for frequencies

'

NON-REPETITIVE 2

PEAK REVERSE
VOLTAGE, V RSM
Tj = 25 to +125C

200 Volts
300
400
500
600
720
840
950
1075
1200
1300
1400
1500
1600
1700

REPETITIVE

DC REVERSE 3
VOLTAGE, V B

PEAK REVERSE
CURRENT, RRM
l

Tj = -40C to +125C

Tj = 125C

20
20
20
20
20
20
20
20
20
20
20
20
20
20
20

100 Volts

200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

mA

cathode (forward polarity) types. Specify A177R- for stud anode (reverse polarity) types. Ratings and specifications
to 20,000 Hz, except where noted otherwise.

from 50

Peak Forward Current, I FM (T c = +65C, Half Sine Wave Pulse Base Width = 8.3 msec, D.F. = 50%)
Peak One-Cycle Surge (Non-Repetitive), Current, Ifsm

Minimum

2
I

Rating (See Curve

1), t

>

msec. (Non-Repetitive)

280 Amperes
2500 Amperes
2
13,500 (RMS Ampere) Seconds

Thermal Resistance, R0 JC (D.C.)

Storage Temperature,

0.4C/Watt

Tstg

-40Cto+150C
-40C to +125C

Operating Junction Temperature, Tj

90 Lb-in

Stud Torque

10.2

N-m

(Min.),

100 Lb-in (Max.)

(Min.), 11.3

N-m

(Max.)

NOTES:
1

Assumes

a heatsink thermal resistance of less than 2.0C/watt.

2 Non-repetitive voltage
3

and current ratings, as contrasted to repetitive ratings, apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.
Assumes a heatsink thermal resistance of less than 1.0C/watt.

4 "Pic-Pac"

is

an acronym for Pressure Internal Contact Package. "

DEVICE SPECIFICATIONS
A177
I

,~:r."^.

:rr:.:

r.:

v: ::_-_;.:_

:'_

0000

i-~

25"C

2,000

_*^1.

1,000

'12

5"C

60

PULSES PER SEC

...

--

400
1,000

200

ss

100

===?

s
u.

:EEEE

1,000

<

50

- 3,300

"

14!

"Tj

20

"S.

5,000

/t,-2

10

10,000 ~
|

20,000~

3
Z
2.0

4.0

3.0

100

5.0

1.

j3

ipoo

100

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

SINUSOIDAL PULSE BASE WIDTH

MAXIMUM FORWARD CHARACTERISTICS

2.

10,000

MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT
SINUSOIDAL WAVEFORM (T c = 65C)

10,000

'>

PULSt

"

tntmsr

WATTS-SEC
PER PULSE

Z
<
6( D.

PULSE 5 PE R SE C.

"

N.2.5

4 Of
,|Wvy
2,000

1,000
r\

^V

-l

3.300

~-

5,000

-*.

k\.

soisV

"

^ N~^

>

\p.c N s o.i
" >

N>1

^*

10,000
1

100

\.

\l.O

20,000

\
ipoo

loo

100

lopoo

ipoo

SINUSOIDAL PULSE BASE WIDTH - MICROSECONDS

SINUSOIDAL PULSE BASE WIDTH

MAXIMUM ALLOWABLE PEAK

FORWARD CURRENT
SINUSOIDAL WAVEFORM (T c = 90C)

^
\

vs

N-V-o-

0025

4.

-4 -M

L_
--

PULSES PER SEC

""

SINUSOIDAL PULSE ENERGY

(T c = 125C)

i,ooo
a
CE
H!

z
<

*
J

'"^b

"

10,000

MICROSECONDS

"

PULSES PER SEC

vft

6n

s^

Vo

b^fX

IE

ioo

&X

100

<

^V^nS 4? fa- s'*

^ Si_-^
^-

o
_i
<

s
2
10

100

1,000

I0

TRAPEZOIDAL PULSE BASE WIDTH - MICROSECONDS

5.

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT, TRAPEZOIDAL WAVEFORM
(T c = 65C),

(RISING

6.

DI/DT

& FALLING)

= 100 A/juS

IOO

1,000

10,000

TRAPEZOIOAL PULSE BASE WIDTH -MICROSECONDS

578

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT, TRAPEZOIDAL WAVEFROM
(T c = 90 C),

(RISING

DI/DT

& FALLING)

= 100

A/fjiS

DEVICE SPECIFICATIONS
A177
1,000

S 0.25N.
r

PULSE ENERGY

so. 35

IN

NOO 25 s

WATTS-SEC

l-M

.1

'\

\
s

50 A

^~Ifm

25 A
**

a:

trO
tr

\s

s
!

100

10

TRAPEZOIDAL PULSE BASE Wl DTH

7.

10,000

1,000
-

RECOVERED CHARGE

8.

J\r- 'A

4-

100

(Tj = 125C)

(Maximum Recovered Charge Group

maximum

request

II
50

20

10

REVERSE di/dl -AMPERES/MICROSECOND

MICROSECONDS

If

1.0

TRAPEZOIDAL PULSE ENERGY

DI/DT (RISING & FALLING) = 100 A/^S
1

REVERSE

A177

recovered charge group 12

X9,

e.g.

is

12)

required,

A177BX9, A177RBX9,

etc.

tBH//
^5,

.5

!rM
- (REC)

0.75
X

RM

(REC)

a.

0.3

'b
S FACTOR --

i-

o
<
05

0.1

>

.'

T
T

Ol

10

1.0

REVERSE RECOVERED CHARGE Q R(REC )/*

9.

30

TIME

TYPICAL "S" FACTOR VERSUS REVERSE

RECOVERED CHARGE

O.I

COULOMBS
10.

(Tj = 125C)

I.O

IN

SECONDS

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

z 90

70

p a
K

"ft

,_

So'
a:

2
1.

345678

PULSE WIDTH-MILLISECONDS

11

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATING VERSUS PULSE TIME
FOLLOWING RATED LOAD CONDITIONS
l

579

A177

OUTLINE DRAWING
TABLE OF DIMENSIONS
Conversion Table

DECIMAL INCHES

SYM.
SEATING PLANE

A
B
"'

1.020

390

?
6
j

M
N
P
H
T

METRIC

MAX.

MIN.

MIN.

1.140

44.45

.800

1.570

1750

9.90
39.8_

4.745
.629
.261

110.36
12.70
6.9'7~

.060

1.052

1.063

S4.72

MAX.

28.96

4.345
.300
.259
.320
.280
.060
.640
.920

MM

25.90

12.70

120.52
13.20
7.14

6.12

.320
.090

7.11

1.52

21.33

.910

23

6.13

2.29
23.11

36

i.

1.52

(7.00

NOTES:

MODEL
A 177

FQRWARC

POLARITY
AI77R

REVERSE

TERMINAL

TERMINAL

ANODE

CATHODE

CATHODE

ANODE

Copper Lead, 3/16 Inch Nominal Diameter.

1.

Flexible

THREAD

THREAD

RELIEF

2.

One Nut and One Lockwasher Supplied With Each

SIZE

LENGTH

DIAMETER

3/8

-24

.640

.373

16.26

9.47

Hardware
3.
4.

is

Unit. Material of

Steel-Cad Plated.

"R" Dimension
"T" Dimension

is
is

Diameter of Effective Seating Area.

Area of Unthreaded Portion. Complete Threads

are Within 2.5 Threads of Seating Plane.

POLARITY

UNF -2A

MM
T^49

74 MM

5.

Angular Orientation of Terminals

6.

Approximate Weight: 105 Grams.

is

Undefined.

MOUNTING INSTRUCTIONS
Following these installation instructions will result in a
or

rectifier diode-to-heatsink contact

thermal resistance of 0.10C/watt

less.
1.

2.

Be sure mounting surface

is

clean and flat within .001 inch/inch.

Mounting hole diameter should not exceed the outside diameter of the

rectifier

diode stud by more than 1/16 inch,

and should be deburred.

3.

Use

Dow

Coming's DC3,

4,

340

or

640 or

GE G322Lor

equivalent,

the heatsink.
4.

Use only hardware furnished with each

5.

Tighten with a torque wrench, from nut

rectifier diode.

side, to

100

lb-in

I
580

max.

on mounting surfaces that come

in

contact with

High Power

Silicon

Rectifier

1500 Volts

150A Avg.

A 180 Series is General Electric's highly reliable, all-diffused, Pic-Pac 4

150 ampere silicon rectifier diode. This diode is similar to the 1N3085-92
series and the 1 N5 1 62.
The

This series of rectifier diodes

trial

is particularly suited to a wide range of indusapplications, expecially those requiring high performance rectifiers.

FEATURES:

TYPICAL APPLICATIONS

Thermal Fatigue Resistant Pic-Pac

Cathode Strain Buffer

Soft Recovery

1500 Volt

Transportation Equipment

DC Motor
DC Power

Construction

Control
Supplies

Battery Vehicles

VRRM

Hermetic Package
Available in 3/8" or 1/2" Stud

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

TYPES*

A180A
A180B
A180C
A180D
A180E
A180M
A180S

A180N
A180T
A180P
A180PA
A180PB
A180PC
A180PD
A180PE

REPETITIVE PEAK 1
REVERSE VOLTAGE

NON-REPETITIVE 2

V RRM

PEAK REVERSE
VOLTAGE, V RSM

Tj = -40C to +200C

Tj = 25C to +200C

100 Volts

200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

t C = +143C,

Tj = 200C

20
20
20
20
20
20
20
20
20
20
20
20
20
20
20

100 Volts

200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

*Models listed are stud cathode (forward polarity) types. Specify A180R-for stud
are for frequencies from 50 to 400 Hz, except where noted otherwise.

Average Forward Current,

Tj = -40C to +200C

200 Volts
300
400
525
650
800
925
1050
1175
1300
1400
1500
1600
1700
1800

REPETITIVE PEAK
REVERSE CURRENT
'FIRM @ V RRM

DC REVERSE 3
VOLTAGE, V R

mA

anode (reverse polarity) types. Ratings and specifications

150 Amperes
3400 Amperes
22,000 (RMS Ampere) 2 Seconds
Minimum I 2 t Rating (See Curve 4), t > 1 msec. (Non- Repetitive)
=
Peak Forward Voltage Drop, VFM (T c = +143C, I F (av)
150 Amps. Average, 471 Amps. Peak)
1.3 Volts
Thermal Resistance, R0 JC (DC)
0.3C/Watt
Storage Temperature, T stg
-40C to +200C
Operating Junction Temperature, Tj
-40C to +200C
Stud Torque (See Mounting Guide)
90 Lb-in (Min.), 100 Lb-in (Max.)
I F (av) (

Single-Phase, Half Sine

Peak One-Cycle Surge (Non-Repetitive), Forward Current,

Wave)

FSM

10.2

N-m

(Min.),

1 1

.3

N-m

(Max.)

NOTES:
1 Assumes
a heatsink thermal resistance of less than 2.0C/watt.
2 Non-repetitive voltage and current ratings, as contrasted to repetitive ratings, apply for occasional or unpredictable overloads,
example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.

Assumes

a heatsink thermal resistance of less than 1.0C/watt.

4 "Pic-Pac"

is

an acronym for Pressure Internal Contact Package.

581

For

A180

DEVICE SPECIFICATIONS

10,000

5,000
2,000

^s

1,000

500
t

200

200

100

50

6^

20

r^

3*

10

5.0

10

2.0

3.0

4.0

20

5.0

40

INSTANTANEOUS FORWARD VOLTAGE - VOLTS

1.

MAXIMUM FORWARD CHARACTERISTICS

2.

ISO

3*

DC

/l*

60

80

100

140

120

160

AVERAGE FORWARD CURRENT -AMPERES

MAXIMUM CASE TEMPERATURE VS.

AVERAGE FORWARD CURRENT

60
50

O s
O 40
z (c
u M

I60

%w 30
6^

20
JUNCTION TEMPERATURE' 200"C
REVERSE VOLTAGE =0
10

So
s!
*

80

60

7
5

40
20

<
0.

40

60

80

100

120

140

160

AVERAGE FORWARD CURRENT-AMPERES

3.

PULSE WIDTH-MILLISECONDS

AVERAGE FORWARD POWER DISSIPATION

VS. AVERAGE FORWARD CURRENT

4.

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATING VS. PULSE TIME
FOLLOWING RATED LOAD CONDITIONS
l

I
582

180

A180

DEVICE SPECIFICATIONS

*0.5

z
So.z

u
0.
a
<
z
c

0.1

UJ

:.o.
Z
UJ
5
z

<

.02

.001.002 .005

.01

.02

.05

0.1

.5

.2

TIME

IN

5.0

2.0

1.0

10

20

50

100

SECONDS

TRANSIENT THERMAL IMPEDANCE -

5.

JUNCTION-TO-CASE

TABLE OF DIMENSIONS
Conversion Table

DECIMAL INCHES

SYM.
SEATING PLANE

METRIC

MM

Mint.

MAX.

MIN.

MAX.

1.020

1.140

25.90

B
C

.390

.500

9.90

28.96
12.70

1.570
4.750

1.750
5.150

39.87
120.65

130.81

.520

.625

13.20

15.88

270

.291

6.85

7.39

.320

8.12

.280

320

7.11

8.13

.070

.110

1.77

2.79

21.33

23.11

D
J

840

R
T

.920

1.052

.910

.060

44.45

23.36

1.52

26.72

1.063

NOTES

27.00

NOTES:

MODEL

TERMINAL

TERMINAL

1.

Flexible

THREAD

THREAD
LENGTH

RELIEF

2.

One Nut and One Lockwasher Supplied With Each

DIAMETER

SI2E

AI80

FORWARD
POLARITY

ANODE

CATHODE

CATHODE

ANODE

3/8

- 24

AI80R

REVERSE
POLARITY

UNF - 2A

.640

3.

.373

4.

16.26

1549

MM

Copper Lead, 9/32 Inch Nominal Diameter.

Hardware

is

Unit. Material of

Steel-Cad Plated.

"R" Dimension
"T" Dimension

is
is

Diameter of Effective Seating Area.

Area of Unthreaded Portion. Complete Threads

are Within 2.5 Threads of Seating Plane.

9.47

74 MM

5.

Angular Orientation of Terminals

6.

Approximate Weight: 105 Grams.

is

Undefined.

INSTALLATION INSTRUCTIONS
Following these installation instructions will result in a
or

rectifier diode-to-heatsink contact

thermal resistance of 0.10C/watt

less.

1.

Be sure mounting surface

2.

Mounting hole diameter should not exceed the outside diameter of the
and should be deburred.

3.

Use

Dow

is

clean and flat within .001 inch/inch.

Coming's DC3, 4, 340, 640 or

GE G322L

or equivalent,

the heatsink.
4.
5.

Use only hardware furnished with each

rectifier diode.

Tighten with a torque wrench, from nut side to 100

583

lb-in.

rectifier

diode stud by more than 1/16 inch,

on mounting

surfaces that

come

in

contact with

High Speed

Fast Recovery Rectifier

A190 SEE 1N3735, PAGE 241

150A Avg.

1500 Volts
The A187

General Electric's highly reliable, all-diffused, Pic-Pac,

150 ampere, fast recovery, silicon rectifier diode. These diodes are designed
for use in high frequency applications or where a fast recovery diode is a
necessity. These diodes provide a superior combination of speed, blocking
voltage capability and soft recovery, which is required in such demanding
series

is

applications as:

FEATURES:

Feedback Diode

Inverter

Free Wheeling Diode

High Frequency Rectification

Low EMI Power

Supplies

Up To 20,000 Hz

Published Current Ratings

All-Diffused

Thermal Fatigue Resistant Pic-Pac 4 Construction

Cathode Strain Buffer

Soft Recovery With

Rugged Hermetic Package

Available in 3/8" or 1/2" Stud

Low

Recovered Charge

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

REPETITIVE PEAK
REVERSE VOLTAGE
V BRM

TYPES*

Tj = -40C to +1 25C

A187A
A187B
A187C
A187D
A187E
A187M

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

A187S

A187N
A187T
A187P
A187PA
A187PB
A187PC
A187PD
A187PE
*Models

listed are stud

are for frequencies

NON-REPETITIVE 2

PEAK REVERSE
VOLTAGE, V RSM
T j = 25C to

+1 25C

200 Volts
300
400
500
600
720
840
950
1075
1200
1300
1400
1500
1600
1700

REPETITIVE

DC REVERSE 3
VOLTAGE, V R

PEAK REVERSE
CURRENT, RRM
l

Tj = -40C to +125C

Tj = 125C

25
25
25
25
25
25
25
25
25
25
25
25
25
25
25

100 Volts

200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

mA

cathode (forward polarity) types. Specify A187R- for stud anode (reverse polarity) types. Ratings and specifications
to 20,000 Hz, except where noted otherwise.

from 50

Peak Forward Current, I FM (T c = +65C, Half Sine Wave Pulse Base Width = 8.3 msec, D.F. = 50%)
Peak One-Cycle Surge (Non-Repetitive), Forward Current, I FSM

Minimum

I t Rating (See Curve 1

Thermal Resistance, Rq }c (D.C.)
Storage Temperature, Tstg

1), t

>

msec. (Non-Repetitive)

Operating Junction Temperature, Tj

Stud Torque

NOTES:
1

Assumes

380 Amperes
2800 Amperes
2
21,000 (RMS Ampere) Seconds
0.3C/Watt

-40C to +150C
-40C to +125C
90 Lb-in (Min.), 100 Lb-in (Max.)
10.2

N-m

(Min.),

1.3

N-m (Max.)

a heatsink thermal resistance of less than 2.0C/watt.

and current ratings, as contrasted to repetitive ratings, apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.
3 Assumes a heatsink thermal resistance of less than 1.0C/watt.
4 "Pic-Pac" is an acronym for Pressure Internal Contact Package. 04
2 Non-repetitive voltage

DEVICE SPECIFICATIONS
A187
iii

10,000

10,000

111^

5,000

rj

-i2

PULSES PER SEC

,000

=3

\ ^iItr S"o ^?
Vj\^ rv"o
*,-,

'r

I
o

2.0

1.0

3.0

4.0

Jo. 3 o .oAo

5.0

1,000

100

10

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

1.

^JqSw

10,000

SINUSOIDAL PULSE BASE WIDTH - MICROSECONDS

MAXIMUM FORWARD CHARACTERISTICS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT SINUSOIDAL WAVEFORM

:.

(T c = 65C)
10,000

to

10,000

^2.5

10
"S^O.5

0.25\

en

<

.1

ly

,000

05
T

H ULSES'"

^'
3

">

100

dT?

n\

li

T
T
J

IN

WATTS -SEC

<

in

100

1,000

100

PULSE ENERG Y

3.

S3

MICROSECONDS

SINUSOIDAL PULSE BASE WIDTH

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT
SINUSOIDAL WAVEFORM (T c = 90 C)

4.

0,000

10,000

1,000

100

SINUSOIDAL PULSE BASE WIDTH -MICROSECONDS

SINUSOIDAL PULSE ENERGY

(T,

125C)

ffiOjOOO

a
z

Vo
60

p ULSES PE RSf:c

1,000

PL LSES PE *SE c

IvOOO

si*!^?o^
Jras
$b

Afee? v^s
ii>o

<!,u
"

i 3(DC
& .0 JU S

uu

\
v,!

20,000j^
1

100

V"vV s

>

s
1

fc.

I
p

10
10

100

TRAPEZOIOAL PULSE BASE WIDTH

5.

1,000
-

100

10,000

MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT
TRAPEZOIDAL WAVEFORM (T c = 65C)

TRAPEZOIDAL PULSE BASE WIDTH

o.

585

1,000
-

MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT
TRAPEZOIDAL WAVEFORM (T c = 90 C)

DEVICE SPECIFICATIONS
A187
V

VV

3
3
o
0.25\

PULSE ENERGY

v-

_.S

!s,_

\N

90

zO

'

8.

REVERSE di/dt (AMPERES /MICROSECOND)

RECOVERED CHARGE
maximum

If

(Tj

= 125C)

recovered charge group 12

A187

request

100

50

20

10

(Maximum Recovered Charge Group

(Tj = 125C)

I RM(REC)

d /dt

MICROSECONDS

TRAPEZOIDAL PULSE ENERGY, DI/DT

(RISING & FALLING) = 100 A/fiS

di/dt

12

10,000

1,000

TRAPEZOIDAL PULSE BASE WIDTH

y^r

x.

D
U

s,\
I00

\-Ifm

io

s,

A-

"

.r __

-v5

S
*<,.

100

50

5
a
s

-.

400

&

NOO

10

fn

l0

^0.

SO. 35

IN

WATTS-SEC
PER PULSE

zoo

4.

X9,

e.g.

is

12)

required,

A187BX9, A187RBX9,

etc.

(rii/rlt)RFC

T
.5
"

X RM
(REC)

0.75
r

RM

(REC)

0.3

"S" FACTOR

=,
O.I

T
T
.05

O.I

10

l(

50

9.

TIME

TYPICAL "S" FACTOR VERSUS REVERSE

RECOVERED CHARGE

g
UJO
oe

10.

90
70

20

l,
r

1 8

x <
UJ
a.

PULSE WIDTM-MILLISECONDS

11.

SECONDS

JUNCTION-TO-CASE

J,! 30

IN

TRANSIENT THERMAL IMPEDANCE

(Tj = 125C)

h5

1.0

O.I

/i COULOMBS
REVERSE RECOVERED CHARGE Q
R(REC)

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATINGS VERSUS PULSE TIME
FOLLOWING RATED LOAD CONDITIONS
l

586

A187

OUTLINE DRAWING
TABLE OF DIMENSIONS
Conversion Table

SEATING PLANE

METRIC MM

DECIMAL INCHES

SYM.
B
C

MIN.

MAX.

MIN.

MAX.

1.020
.390

1.140

25.90

.500

9.90

28.96
12.70

1.570

4.750

1.750
5.150

39.87
120.65

.520

.625

13.20

15.88

.270

.291

.320

7.39

6.85
8.12

.280

.320

7.11

8.13

.070
.840

.110

1.77

2.79

21.33

23.11

R
T

.920

1.052

.910

.060

44.45
1

30.81

23.36

1.52

26.72

1.063

NOTES

3
4

27.00

NOTES:

MODEL

TERMINAL

TERMINAL

l7

FORWARD

ANODE

CATHODE

Copper Lead, 9/32 Inch Nominal Diameter.

1.

Flexible

THREAD

THREAD

RELIEF

2.

One Nut and One Lockwasher Supplied With Each

SIZE

LENGTH

DIAMETER

3/8

.640

-24

Hardware
3.

.373

4.

POLARITY

is

Unit. Material of

Steel-Cad Plated.

"R" Dimension

is

"T" Dimension

is

Diameter of Effective Seating Area.

Area of Unthreaded Portion. Complete Threads

are Within 2.5 Threads of Seating Plane.

AM7R
REVERSE

CATHODE

ANODE

ROLARITY

16.26

UNF -2A

15^9

MM

9.47

IS"

5.

Angular Orientation of Terminals

6.

Approximate Weight: 105 Grams.

is

Undefined.

MOUNTING INSTRUCTIONS
Following these installation instructions will result in a
or

rectifier diode-to-heatsink contact

thermal resistance of 0.10 C/watt

less.
1.

Be sure mounting surface

2.

Mounting hole diameter should not exceed the outside diameter of the
and should be deburred.

3.

Use

Dow

Coming's DC3,

is

4,

clean and flat within .001 inch/inch.

340

or

640 or

GE G3221

or equivalent,

rectifier

diode stud by more than 1/16 inch,

on mounting surfaces that come

in

contact with

the heatsink.
4.

Use only hardware furnished with each

5.

Tighten with a torque wrench, from nut

rectifier diode.
side, to

100

lb-in

max.

I
587

High Speed

Fast Recovery Rectifier

1500 Volts

250A Avg.

The A197 series is General Electric's highly reliable, all-diffused, Pic-Pac, 4

250 ampere, tast recovery, silicon rectifier diode. These diodes are designed
for use in high frequency applications or where a fast recovery diode is a
necessity. These diodes provide a superior combination of speed, blocking

voltage capability and soft recovery, which

is

required in such demanding

applications as:

Inverter Feedback Diode

Free Wheeling Diode

High Frequency Rectification

Low EMI Power

Supplies

FEATURES:
Up To 20,000 Hz

Published Current Ratings

All-Diffused

Thermal Fatigue Resistant Pic-Pac 4 Construction

Cathode Strain Buffer

Soft Recovery With

Rugged Hermetic Package

Low

Recovered Charge

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

REPETITIVE PEAK
REVERSE VOLTAGE
V RRM

TYPES*

Tj = -40C to +125C

A197A
A197B
A197C
A197D
A197E
A197M

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

A197S

A197N
A197T
A197P
A197PA
A197PB
A197PC
A197PD
A197PE
*Models

listed are stud

are for frequencies

NON-REPETITIVE 2

PEAK REVERSE
VOLTAGE, V RSM

REPETITIVE

DC REVERSE 3
VOLTAGE, V R

Tj = 25C to +125C

Tj = -40C to +125C

200 Volts
300
400
500
600
720
840
950

100 Volts
200
300

1075
1200
1300
1400
1500
1600
1700

PEAK REVERSE
CURRENT, RRM
Tj = 125C

25
25
25
25
25
25
25
25
25
25
25
25
25
25
25

400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

mA

cathode (forward polarity) types. Specify A197R- for stud anode (reverse polarity) types. Ratings and specifications
to 20,000 Hz, except where noted otherwise.

from 50

720 Amperes
Peak Forward Current, I FM (T c = +65C, Half Sine Wave Pulse Base Width = 8.3 msec, D.F. = 50%)
Amperes
5000
I
(Non-Repetitive),
Forward
Current,
Peak One-Cycle Surge
FSM
2
44,000 (RMS Ampere) Seconds
Minimum I 2 t Rating (See Curve 11), t > 1 msec. (Non-Repetitive)
0.18C/Watt
Thermal Resistance, R0 JC (D. C.)
Storage Temperature,

-40C to +150C

Tstg

Operating Junction Temperature, Tj

Stud Torque

NOTES:
1

Assumes

275 Lb-in
31

N-m

(Min.),

-40 C to +125 C
325 Lb-in (Max.)

(Min.), 36.7

N-m

(Max.)

a heatsink thermal resistance of less than 2.0C/watt.

2 Non-repetitive voltage

and current ratings, as contrasted to repetitive ratings, apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.
3 Assumes a heatsink thermal resistance of less than 1.0C/watt.
4 "Pic-Pac" is an acronym for Pressure Internal Contact Package. 588

'

DEVICE SPECIFICATIONS

10,000

25 "C

y,
UJ

I25*C~

Ij

Mia/

10,000

UJ

^ ^s

<x
0.

UJ

1,000

PULSES PER SEC

J
O
i

5
p

1,000

100

Q-

r
li

1
/

H>

#&>

w ;
^
s:

*;

'

o
<
s
s

//
2.0

1.0

4.0

3.0

I0O
100

5.0

INSTANTANEOUS FORWARD VOLTAGE

1.

r
.
20,000

"^

CD

10

**

N*

?o~

cfh\t

->37NJjL
7o,r
sfffiSt 3-r>

1,000

SINUSOIDAL PULSE BASE WIDTH

VOLTS

MAXIMUM FORWARD CHARACTERISTICS

10,000

MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT SINUSOIDAL WAVEFORM
(T c = 65 C)

JOOO

10,000

a
s
bC

400

PULSES PER SEC

.,

PULSE ENERGY

_._

IN

TTS-SEC

K
K

1,000

PE R
"

^.

h-

2,000
>

1,000

3,300

*>

5,000

X
s.
*

\.

N.>

\ 10

1,000

V-JO

,\\ sj V

I*

10,000

'v
^

PULSE

S^-5

x\.
X >

.2

"">

V,

O.05N

I
o

0.025\
V
^

i
s

100
100

10

1,000

10,000

10

SINUSOIDAL PULSE BASE WIDTH - MICROSECONDS

MAXIMUM ALLOWABLE FORWARD CURRENT

SINUSOIDAL WAVEFORM (T c = 90C)
1

-2,<500

II

II

10,000

1,000

SINUSOIDAL PULSE ENERGY

(T,

125C)

\^

4C>0

1,00

4.

10,000

1,000

MICROSECONDS

100

SINUSOIDAL PULSE BASE WIDTH

3<

3, 300

5,0 00

1,000

10,000
1

> v*>

20,000

10

<

'

<

I]

L
100

1,000

10,000

100,

100

TRAPEZOIDAL PULSE BASE WIDTH - MICROSECONDS

5.

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT, TRAPEZOIDAL WAVEFORM
(T c = 65C), DI/DT (RISING

& FALLING)

1,000

10,000

TRAPEZOIDAL PULSE BASE WIDTH - MICROSECONDS

6.

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT, TRAPEZOIDAL WAVEFORM
(T c = 90C),

100 A/vS

DI/DT (RISING
100 A///S

589

& FALLING)

DEVICE SPECIFICATIONS

A197

1,000

3,000

_|_i

MM

iTu- 1.666

2
o

PULSE ENERGY

*i

::
*- 1

IN

WATTS-SEC

PER PULSE

20C
100

0.2 5
0.

1,000

|J

IJ.OO
t

^-Ifm

r-

UJ

<rO

100

TRAPEZOIDAL PULSE BASE WIDTH

d /dt

REVERSE di/dt

MICROSECONDS

TRAPEZOIDAL PULSE ENERGY

DI/DT (RISING & FALLING) =

(Tj = 125C)

8.

AMPERES

1,000

MICROSECOND

RECOVERED CHARGE

(T, = 125 C)

(Maximum Recovered Charge Group

100 A/juS
If

maximum

request

recovered charge group 12

A197

X9,

-I R (REC)

100

10

10,000

1,000

e.g.

is

12)

required,

A197BX9, A197RBX9,

(di/dt)REC

di/dt

T\h 1 A -(--B-L/
I

'

'/

UJ

o
z

0.75
l
i.o-

X RM
(REC)

s
UJ

RM

a.

- (REC)

S FACTOR =rH-

0.1

I
or

0.5

r<

^-

<

or
i-

0.1.

I.O

9.

10
00
REVERSE RECOVERED CHARGE -Q
COULOMBS
"fit REC) H

IOO0

0.1

TIME

TYPICAL "S" FACTOR VERSUS

REVERSE RECOVERED CHARGE (T, = 125C)

300

S>j

200

On
Z ~
5
o:

ijjo 'oo

80

* | 9 60
N <x 50
H
40
V)
Z

10.

10

SS
Ss

<<
a.

PULSE WIOTH-MILLISECONDS

11.

SECONDS

JUNCTION-TO-CASE

1.0

IN

TRANSIENT THERMAL IMPEDANCE -

/'4

>

\ta

CE
Z>

cc
ui

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATINGS VERSUS PULSE TIME
FOLLOWING RATED LOAD CONDITIONS
l

590

etc.

A197

OUTLINE DRAWING

TABLE OF DIMENSIONS
Conversion Table

SEATING PLANE
SYM.

MIN.

1.450

1.550

8
C

2300

5.300
797

5.700
.827

36.83
12.70
58.42
134.62
20.24

.665

.755

16.89

19.18

322
437

.333

8.17

846

N
N

.325

.360
.170

8.25
-

9 14

.155

1.060

1.100

2692

27 94

.660

749

19.02

31.75

K
L

A!9T

FORWARD

TERMINAL

ANODE

THREAD

CATHODE

3/4

SIZE

REVERSE

CATHODE

POLARITY

ANODE

500

750
500

11.99

.156

16.76
-

1.240

1.250

31 49

MAX.
39.37
19.05

63 50
144.78
21.01

396

NOTES:

Copper Lead.

1.

Flexible

2.

One Nut and One Lockwasher Supplied With Each

3.

Hardware is Steel, Cad Plated.

"T" Dimension is Area of Unthreaded Portion. Complete Threads

POLARITY
AI97R

NOTES

MAX.

TERMINAL

MM

MIIM.

MODEL

METRIC

DECIMAL INCHES

UNF - 2A

Unit. Material of

are Within 2.5 Threads of Seating Plane.

4.

Angular Orientation of Terminals

is

Undefined.

MOUNTING INSTRUCTIONS
Following these installation instructions will result in a
or

rectifier diode-to-heatsink contact

thermal resistance of 0.08C/watt

less.
1.

Be sure mounting surface

2.

Mounting hole diameter should not exceed the outside diameter of the
and should be deburred.

3.

Use

Dow

Coming's DC3,

is

4,

clean and

flat

340 or 640 or

within .001 inch/inch.

GE G322L

or equivalent,

rectifier

diode stud

on mounting

by more than 1/16

surfaces that

come

in contact

inch,

with

the heatsink.
4.

Use only hardware furnished with each

5.

Tighten with a torque wrench, from nut

rectifier diode.
side, to

325

lb-in

max.

I
591

High Power

A390

Silicon

Rectifier

400A

1500 Volts

The A390 Series is General Electric's highly

400 ampere silicon rectifier diode.

Avg.

reliable, all-diffused Press-Pak

FEATURES:

Soft Reverse Recovery

High Reverse Blocking Voltage Capability

Pressure Contacts

Package Reversibility

Rugged Glazed Ceramic Hermetic Package

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

TYPES

A390A
A390B
A390C
A390D
A390E
A390M
A390S

A390N
A390T
A390P

A390PA
A390PB
A390PC
A390PD
A390PE

REPETITIVE PEAK 1

NON-REPETITIVE 2

REVERSE VOLTAGE
V RRM

PEAK REVERSE
VOLTAGE, V RSM

Tj = -40C to +200C

Tj = 25C to +200C

100 Volts

200 Volts
300
400
525
650
800
925
1050
1175
1300
1400
1500
1600
1700
1800

200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

DC REVERSE 3
VOLTAGE, V R
Tj = -40C to +200C

100 Volts

200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

REPETITIVE PEAK
REVERSE CURRENT
>RRM @ V RRM
Tj = 200C

25
25
25
25
25
25

mA

25
25
25
25
25
25
25
25
25

Average Forward Current, I F (av) (T c = 114C, Single Phase, Half Sine Wave, Double-Side Cooled)
400 Amperes
Peak One-Cycle Surge (Non-Repetitive) Forward Current, I FSM
7000 Amperes
2
Minimum I 2 t Rating (for times > 1.5 msec, Non-Repetitive)
80,000 (RMS Ampere) Seconds
=
Peak Forward Voltage Drop, VFM (I F (av) 40 Amps. Avg., 1260 Amps. Peak, 144C Case Temp., Single-Phase).
1.4 Volts
.

Maximum DC Thermal Resistance, Rg JC Storage Temperature, Tstg

0.095C/Watt

Double-Side Cooling

-40C to +200C

-40C to +200C

Operating Junction Temperature, Tj

Mounting Force Required 4

800 Lbs 10%

3.56KN 10%
NOTES:
a heatsink thermal resistance of less than 2.0C/watt.

Assumes

Non-repetitive voltage and current ratings, as contrasted to repetitive ratings, apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.

Assumes

a heatsink thermal resistance of less than 1.0C/watt.

4 Refer to the last page of this specification for Press-Pak

mounting

592

instructions. Also see

SCR

Manual, Fifth Edition, Chapter

1 8.

DEVICE SPECIFICATIONS
A390
I000
800

10,000
,

8,000
6,000

l3*

600
j

4,000

6*

400
:

"2

-Tj
i

2,000
1,000

800
600
2>

I00

80

60

40

23'C

4
H

100

80
60

40

O
a.

1
/

J
11

20

10

30

2.0

600 800 1000

400

5.0

4.0

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

AVERAGE FORWARD POWER DISSIPATION

VS. AVERAGE FORWARD CURRENT

MAXIMUM FORWARD CHARACTERISTICS

1.

s*

DC

SING LE SIDE

IO0

3.

COOLEO

400
300
200
AVERAGE FORWARD CURRENT -AMPERES

100

400
200
300
AVERAGE FORWARD CURRENT-AMPERES

MAXIMUM CASE TEMPERATURE VS.

AVERAGE FORWARD CURRENT FOR

MAXIMUM CASE TEMPERATURE VS.

AVERAGE FORWARD CURRENT FOR

SINGLE-SIDE COOLING

DOUBLE-SIDE COOLING
10,000

T
8,000
T
T
UJuj

OS 6,000

;^*^
DOUBLE

6*
i+.

SIDE:cc OL

NG

<l_ 4,000

UJUJ

o.c.

c IOC

BLE SIDE

OL ED

"1
t

~z\

SI

NGLE

SIDE cc
:

OL IN 6

* 2 2,000
j

TIME

5.

1.0

0.1

IN

SECONDS

TRANSIENT THERMAL IMPEDANCE -

6.

JUNCTION-TO-CASE
593

8 10
20
CYCLS AT 60 Hz

30

40 5060

MAXIMUM SURGE CURRENT FOLLOWING

RATED LOAD CONDITIONS

80 100

A390
400
i^

uj
q:

21U

o 300
O
O
- 200

2 5 S ,oo

<7wg
M
a

80
60

JUNCTION TEMPERATURE
REVERSE VOLTAGE =

200"C

PULSE WIDTH -MILLISECONDS

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATING VS. PULSE TIME
FOLLOWING RATED LOAD CONDITIONS
l

OUTLINE DRAWING
TABLE OF DIMENSIONS
Conversion Table

SYM

TOTAL (.03MM)

MM

MAX.

.744

.752

.030

.060

.76

1.52

.515

.565

13.08

14.35

1.600 1.656

40.64

42.06

.001

METRIC

MIN.

SEATING PLANES
FLAT WITHIN

DEC MAL
INC HES

MIN.

MAX.

18.89

19.10

2.79

.110

.031

.017

.33

.135

.145

3.42

3.68

.06?

.083

1.70

2.1

.43

"i

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When

the Press-Pak

is

assembled to a heat sink

Sand each surface

in accord-

lightly

with 600

ance with the following general instructions, a reliable and

to

and low thermal resistance interface

SF1154 200 centistoke viscosity)

(GE G322L or Dow Corning DC

1.

will result:

Check each mating surface for nicks, scratches, flatness

and surface finish. The heat dissipator mating surfaces
should be flat within .0005 inch/inches and have a surface finish of

2. It

is

that the heat dissipator

will

mounting

4.

grit

paper just prior

apply silicone

oil

(GE

or silicone grease
3, 4,

340 or 640).

adversely

affect

the

electrical

and

thermal

Assemble with the specified mounting force applied

through a self-leveling, swivel connection. The force has
to be evenly distributed over the full area. Center holes

or copper surfaces will oxidize in time resulting

in excessively high

off and

resistances.)

surfaces be plated with nickel, tin or silver. Bare alumi-

num

Clean

Clean off and apply again as a thin film. (A thick film

63 micro-inches.

recommended

assembly.

on both top and bottom of the Press-Pak

thermal resistance.

ing purposes only.

594

are for locat-

MOUNTING THE

A390,

A390

ONE-HALF INCH PRESS-PAK

USING THE SERIES 1000 CLAMP

CLAMP FEATURES:

Hardened Steel Pivot insuring constant pressure

Single-side cooling terminal available

in

rugged applications over long periods.

upon

request.

Positive, non-binding swivel action.

One-piece phenolic insulator gives added 1/2" creep

distance.

Use of special Force Indicator Gauge eliminates need

for torque wrenches, inaccurate

"flex" gauges and

guesswork.

Various bolt lengths available to accommodate most

mounting

situations.

No

Stiffening brace to reinforce heat sink available

loose parts to complicate assembly.

upon
SERIES 1000

request.

MOUNTING PROCEDURE:
With the semiconductor positively located in place on the
heatsink(s), place the clamp in position with the bolts
through the holes in the heatsink(s), and proceed as follows:
1.

Refer to

SCR

Press-Pak

SCR,"

To
If

Calibrate Force Gauge:

the gauge

is

suspected of being out of calibration due to

wear or damage, check

it

on

a flat surface as

shown below.

Manual, Fifth Edition, "Mounting The

18.2.7.

2.

Tighten the nuts evenly until finger tight.

3.

Tighten each bolt 1/2 turn, using a 7/16 socket wrench

on the bolt heads.

4.

Place

Force Indicator Gauge firmly

the

springs, as

shown on the Outline Drawing,

against

so that

the

-+\

|-o.3oa,*.0K)

both

ends and the middle are in solid contact with the

springs.

The holes of the gauge

will

indicated

when

then indicate the

mounting force

spring deflection, or force; correct

is

the holes coincide.

Examples:
Holes
Lined Up

TRUE FLAT SURFACE

{OR STRAIGHT EDGE)

/////>/////v^
///////////7?/
Less than rated force.

Tighten nuts alternately Vi turn at a time

until

points coincide.

Correct Force

Excessive force. Loosen nuts and start over.

NEVER try to adjust
spring force by backing off the nuts, spring
friction will produce
false readings. Always
start at

Step

1.

I
If

by

595

the points are not 0.300 .010 apart, calibrate the gauge
filing the

bottom contact

points.

High Speed

Fast Recovery Rectifier

400A

1500 Volts

Avg.

The A397 series is General Electric's highly reliable, all-diffused, Press-Pak,

400 ampere, fast recovery, silicon rectifier diode. These diodes are designed
where a fast recovery diode is a
These diodes provide a superior combination of speed, blocking
voltage capability and soft recovery, which is required in such demanding
for use in high frequency applications or

necessity.

applications as:

Inverter Feedback Diode

Free Wheeling Diode

High Frequency Rectification

Low EMI Power

Supplies

FEATURES:
Up To 20,000 Hz

Published Current Ratings

Soft Recovery With

All-Diffused

Package Reversibility

Rugged Glazed Ceramic Hermetic Package

Low

Recovery Charge

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

TYPES

REPETITIVE PEAK
REVERSE VOLTAGE
V RRM

'

Tj = -40C to +125C

A397A
A397B
A397C
A397D
A397E

A397M
A397S

A397N
A397T
A397P
A397PA
A397PB
A397PC
A397PD
A397PE

00 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1

NON-REPETITIVE 2

PEAK REVERSE
VOLTAGE, V RSM
Tj = 25C to 125C

200 Volts
300
400
500
600
720
840
950
1075
1200
1300
1400
1520
1600
1700

DC REVERSE
VOLTAGE, V R
Tj = -40C to +125C

100 Volts
200
300
400
500
600
700
800

REPETITIVE

PEAK REVERSE
CURRENT, RRM
l

Tj = 125C

25
25
25
25
25
25
25
25
25
25

900
1000
1100
1200
1300
1400
1500

mA

25
25
25
25
25

Peak Forward Current, I FM (T c = +65 C, Half Sine Wave Pulse Width = 8.3 msec, D.F. = 50%)
Peak One-Cycle Surge (Non-Repetitive), Forward Current, I FSM

Minimum Ft

Rating (See Curve 11),

>

msec. (Non-Repetitive)

Thermal Resistance, R^ JC (D.C.)

Storage Temperature, T^g
Operating Junction Temperature, Tj

Mounting Force Required

1200 Amperes
5000 Amperes
44,000 (RMS Ampere) 2 Seconds
095C/Watt
-40C to +150C
-40C to +125C
800 Lbs 10%
3.56KN 10%

NOTES:
1

Assumes a heatsink thermal resistance of less than 2.0C/watt.

Non-repetitive voltage and current ratings, as contrasted to

repetitive ratings, apply for occasional or unpredictable overloads. For

example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.
Assumes a heatsink thermal resistance of less than 1.0C/watt.

596

DEVICE SPECIFICATIONS

A397

0,000
10,000
V)
flc

5,000

a.

<
jl

2,000

UJ

1,000

500

^S.

O
3

s'0

1,000
200

-25-C

ioo

~V
-Sip0n
rv

TV?

M*

OnTZStfwyfu
,/i
NaJNi7

>s

'*k

r^

PULSES PER SEC

'j

fi

<

II
II

50

l\

20
/

11

10

100
2.0

1.0

4.0

S.O

5.0

0,000
1

PUL 3ES PER SE<

p^

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT SINUSOIDAL WAVEFORM
(T c = 65C) DOUBLE SIDE COOLED

2.

-H+

10,000

L.

^ ^

.*:^K

<I

10000

SINUSOIDAL PULSE BASE WIDTH - MICROSECONDS

MAXIMUM FORWARD CHARACTERISTICS

1.

1,000

100

10

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

2.5

''sOS"

*C

P.25V
3.1

ac 5
1,000
'

0.025

^r^
W

* ^o
<o

PULSE ENERGY
IN

100

100
100

1,000

10/300

100

10

SINUSOIDAL PULSE BASE WIDTH - MICROSECONDS

MAXIMUM ALLOWABLE FORWARD CURRENT

SINUSOIDAL WAVEFORM (T c = 90C)
DOUBLE SIDE COOLED
10X300

It'll

1
1

1,000

SINUSOIDAL PULSE BASE WIDTH

SINUSOIDAL PULSE ENERGY

4.

K3/X30

MICROSECONDS

(Tj = 125C)

miopoo

PULSES PE
ULSES PER SE
I.OC)0

4130

2,000

1,000
2,0130

3 ,300.

S,0 oojjk
10,OOC

f
c
3<

1,000

-20,000^

s
^s,

:
-

3,3

o
tr

vN
X
\\
N

V',

>.

1/300

"

Xx

00

,000

10,000

20,000

I
IOO

100
100

10

1,000

K3.000

TRAPEZOIDAL PULSE BASE WIDTH - MICROSECONDS

1,000

TRAPEZOIDAL PULSE BASE WIDTH - MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT TRAPEZOIDAL WAVEFORM
DI/DT (RISING & FALLING) =
100 A/juS DOUBLE SIDE COOLED

100

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT TRAPEZOIDAL WAVEFORM

(T c = 65C)

(T c = 90C)

597

100 A///S

DI/DT (RISING & FALLING) =

DOUBLE SIDE COOLED

10/300

DEVICE SPECIFICATIONS
A397
10,000

1,000

=m#--

PULSE ENERGY

Xrii

_
03

IN

L
-WATTS-SEC/PULSE

1,000

0.5

' r

1.0

\
200

0.2 5

..

100

*;
ii

)0

0.1
tfl

o.os

IjOOO

<

ZS

O.C

V- I FM

io

UJ

^M

tr.

UJ

>

~I R (REC)

di/dt

100

100

10

10000

1,000

TRAPEZOIDAL PULSE ENERGY DI/DT

& FALLING) = 100 A//uS (Tj = 125C)

7.

8.

If

maximum

A397

X9,

e.g.

is

A397BX9,

12)

required,
etc.

r-r-i

T
T

t"~pr.

\
"

recovered charge proup 12

(di/dt)REC

di/dt

r RM
(REC)

MICROSECOND

m
1

TYPICAL RECOVERED CHARGE

request

AMPERES

(Maximum Recovered Charge Group

(RISING

1,000

100

10

REVERSE di/dt

TRAPEZOIDAL PULSE BASE WIDTH - MICROSECONDS

'

^/^

0.75

l.O-:

I RM

(REC)

S FACTOR
..
_

~
^

-1
T

BLI

REVERSE RECOVERED CHARGE-Q R(REC)

9.

1000

100

10

1.0

fi

TIME

TYPICAL "S" FACTOR VERSUS RECOVERY

CHARGE

0.1

COULOMBS
10.

(Tj = 125C)

1.0

IN

SECONDS

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

OUTLINE DRAWING

table of dimensions
Conversion Table

300
DECIMAL

200
SYM

INCHES

METRIC

MM
MAX.

MIN.

MAX.

MIN.

.744

.752

18.89

.030

.060

.76

1.52

.565

13.08

14.35

1.600 1.656

40.64

41.9

2.79

I00

80
60

-=*

40

20

IO

^H

.515

.110

19.10

UJ

(O

ID
a:

q:

.43

.031

.017

.33

135

.145

3.42

3.68

.067

.083

1.70

2.1

3
2

SEATING PLANES
FLAT WITHIN
.00! TOTAL (.03 MM)

PULSE WIDTH-MILLISECONDS

11.

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATING VERSUS PULSE TIME
FOLLOWING RATED LOAD CONDITIONS
l

598

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When the Press-Pak is assembled to a heat sink in accordance with the following general instructions, a reliable and
low thermal resistance interface will result:
1.

Sand each surface

3.

will

is

63 micro-inches.

recommended

with nickel,

or

tin,

that the heat dissipator be plated

silver.

Bare aluminum or copper sur-

faces will oxidize in time resulting in excessively high

thermal resistance.

MOUNTING THE

A397,

adversely

affect

the

electrical

and

thermal

Assemble with the specified mounting force applied

through a self-leveling, swivel connection. The force has
to be evenly distributed over the full area. Center holes
on both top and bottom of the Press-Pak are for locating purposes only.

ONE-HALF INCH PRESS-PAK USING THE SERIES 1000 CLAMP

CLAMP FEATURES:

with 600 grit paper just prior

apply silicone oil (GE

off and

resistances.)
4.

2. It

lightly

Clean

SF1154 200 centistoke viscosity) or silicone grease

(GE G322L or Dow Corning DC 3, 4, 340 or 640).
Clean off and apply again as a thin film. (A thick film

Check each mating surface for nicks, scratches, flatness

and surface finish. The heat dissipator mating surfaces
should be flat within .0005 inch/inch
and have a surface finish of

assembly.

to

A397

Single-side cooling terminal available

Hardened Steel Pivot insuring constant pressure

upon

request.

Positive, non-binding swivel action.

in

rugged applications over long periods.

One-piece phenolic insulator gives added 1/2" creep

distance.

Use of special Force Indicator Gauge eliminates need

and
guesswork.
for torque wrenches, inaccurate "flex" gauges

Various bolt lengths available to accommodate most

mounting

No

situations.

loose parts to complicate assembly.

Stiffening brace to reinforce heat sink available

upon
SERIES 1000

request.

MOUNTING PROCEDURE:
To

With the semiconductor positively located in place on the

heatsink(s), place the clamp in position with the bolts
through the holes in the heatsink(s), and proceed as follows:
1.

Refer to

SCR

Calibrate Force Gauge:

If the gauge

is

suspected of being out of calibration due to

it on a flat surface as shown below.

wear or damage, check

Manual, Fifth Edition for Preparation of

Mounting the Press-Pak SCR, 18.2.7.

2.

Tighten the nuts evenly until finger tight.

3.

Tighten each bolt 1/2 turn, using a 7/16 socket wrench

on the bolt heads.

-+\

|*-

,*.0I0

0.300

4 Place the Force Indicator Gauge firmly against the

springs, as shown on the Outline Drawing, so that both
ends and the middle are in solid contact with the
springs. The holes of the gauge will then indicate the
spring deflection, or force; correct mounting force is
indicated

when

the holes coincide.

Examples:
Holes
Lined Up

TRUE FLAT SURFACE

(OR STRAIGHT EDGE)

Less than rated force.

Tighten nuts alternately % turn at a time
until

points coincide.

Correct Force

Excessive force. Loosen nuts and start over.

NEVER try to adjust
spring force by backing off the nuts, spring
friction will produce
false readings. Always
start at Step 1

If

by
599

the points are not 0.300 + .010 apart, calibrate the gauge
filing

the

bottom contact

points.

High Power

Silicon

Rectifier

1500 Volts

The A430 Series is General Electric's highly

1000 ampere silicon rectifier diode.

1000A

Avg.

reliable, all-diffused Press-Pak

FEATURES:

Soft Reverse Recovery

High Reverse Blocking Voltage Capability

Pressure Contacts

Package Reversibility

Rugged, Glazed Ceramic Hermetic Package With 1" Creepage Path

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

REPETITIVE PEAK
REVERSE VOLTAGE
V RRM

NON-REPETITIVE 2

Tj = -40C to +200C

Tj = 25C to +200C

TYPES

A430E

500 Volts
600
700
800
900
1000
1100
1200
1300
1400
1500

A430M
A430S

A430N
A430T
A430P
A430PA
A430PB
A430PC
A430PD
A430PE

Average Forward Current,

I F (av) (

tc = H3C,

Rating (for times

>
>

500 Volts
600
700
800
900
1000
1100
1200
1300
1400
1500

50

mA

50
50
50
50
50
50
50

50
50
50

1,000 Amperes

10,000 Amperes

(RMS Ampere) 2 Seconds

2
415,000 (RMS Ampere) Seconds
200,000

1.5

Storage Temperature, Tstg

Operating Junction Temperature, T,

REPETITIVE PEAK
REVERSE CURRENT
Irrm @ Vrrm
Tj = 200C

Single Phase, Half Sinewave, Double-Side Cooled)

FSM
msec, Non-Repetitive)
2
I t Rating (for times
8.3 msec, Non-Repetitive)
Peak Forward Voltage Drop, VFM (I F (av) = 1000 Amps.; 3140 Amps. Peak,
Maximum Thermal Resistance, R0jc, Double-Side Cooling
2

Tj = -40C to +200C

650 Volts
800
925
1050
1175
1300
1400
1500
1600
1700
1800

Peak One-Cycle Surge (Non-Repetitive) Forward Current,

Minimum
Minimum

DC REVERSE 3
VOLTAGE, V R

PEAK REVERSE
VOLTAGE, V RSM

13C Case Temp., Single-Phase) ... 1.42 Volts

0.06 C/Watt
-40C to +200C
-40C to +200C
2000 Lbs 10%

Mounting Force Required 4

8.9

KN 10%

NOTES:
1

Assumes

Non-repetitive voltage and current ratings, as contrasted to repetitive ratings, apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-repetitive ratings that are used in fault coordination work.

Assumes

a heatsink thermal resistance of less than l.lC/watt.

a heatsink thermal resistance of less than 0.5C/watt.

4 Refer to the

SCR

Manual, Fifth Edition, Chapter 18 for Press-Pak mounting instructions.

600

A430

DEVICE SPECIFICATIONS
10,000
,

8,000
8,000

UJ

K 4,000
UJ
a.

<

2,000

1,000

800
800

/t j-2S'C

200'C

T,

100

80
60

.4

.8

1.2

2.0

1.6

2.4

INSTANTANEOUS FORWARD VOLTAGE -VOLTS

1.

MAXIMUM FORWARD CHARACTERISTICS

200
4000

I90
I80

2000

I70

* 1000
z 800
2 600
S 400

6. i

60

I50

W
5 200

I40
1

'*-DC

a:
tu

30

w w

I20

100

g
DC

i*

80
60

40

MO
u.

20

I00

90

10

200

2.

400
1000
600
800
AVERAGE FORWARD CURRENT

1400

1200

1600

40
60 80100
200
AVERAGE FORWARD CURRENT

20

AMPERES

MAXIMUM CASE TEMPERATURE VS.

AVERAGE FORWARD CURRENT

400
-

60O8O0I000

AMPERES

AVERAGE FORWARD POWER DISSIPATION

VS. AVERAGE FORWARD CURRENT

3.

FOR DOUBLE-SIDE COOLING

>

^_-

"I

0.06

\Mr*\

/
r-

DO JBLE

SID

CO OLIM G

Mh-

"5

"it

IT

x5

TJ

I
1

0.01

0.1

TIME -SECONDS
4.

TRANSIENT THERMAL RESISTANCE

JUNCTION-TO-CASE
601

A430

OUTLINE DRAWING

INCHES

METRIC

MM

SYM.
MIN.

MAX.

1.333 1.343
.13 5 .14 5
1.018 1.065

A
B
C
D

.0 3

.110

2.2 4

2.300

.0

MAX.

MIN.
3

3.86
3.4

3 4

5.85

6.89
3.5

7.05

8.

4 2

4.0 6

n
D

yFP

(g)

SEATING PLANES
FLAT WITHIN .001 TOTAL
(.03

MM)

MOUNTING THE A430, ONE INCH PRESS-PAK

USING THE SERIES 2500 CLAMP

CLAMP FEATURES:
The General

Electric

Company

offers the Series

to facilitate single- or double-side cooling

of

all

2500

GE

Press Pak,

mounting clamp designed

Press Pak's.

Special features of this clamp:

Metal pivot insuring constant pressure in rugged applications over long periods.
One-piece phenolic insulator gives 1" nominal creep distance.

Use of special Force Indicator Gauge eliminates need for torque

wrenches, inaccurate "flex" gauges, and guesswork.
Various bolt lengths available to accommodate most mounting situations.
No loose parts to complicate assembly.
Stiffening brace to reinforce heat sink available upon request.
Single-side cooling terminal available upon request.
Positive, non-binding swivel action.

I
602

7 6
5

3.6 8

High Speed

Fast Recovery Rectifier

1500 Volts

600A Avg.

The A437

series is General Electric's highly reliable, all-diffused, Press-Pak,

600 ampere, fast recovery, silicon rectifier diode. These diodes are designed
for use in high frequency applications or where a fast recovery diode is a
necessity. These diodes provide a superior combination of speed, blocking
voltage capability and soft recovery, which is required in such demanding

applications as:

Inverter Feedback Diode

Free Wheeling Diode

High Frequency Rectification

Low EMI Power

Supplies

FEATURES:

Published Current Ratings

Soft Recovery With

All-Diffused

Low

Up To 20,000 Hz
Recovered Charge

Rugged Glazed Ceramic Hermetic Package With

Package Reversibility

"

Creepage Path

MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS

TYPES

REPETITIVE PEAK
REVERSE VOLTAGE
V RRM
Tj = -40C to +125C

A437A
A437B
A437C
A437D
A437E
A437M
A437S

A437N
A437T
A437P
A437PA
A437PB
A437PC
A437PD
A437PE

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

NON-REPETITIVE 2

PEAK REVERSE
VOLTAGE, V RSM
Tj = 25C to +125C

200 Volts
300
400
500
600
720
840
950
1075
1200
1300
1400
1500
1600
1700

REPETITIVE

DC REVERSE 3
VOLTAGE, V R

PEAK REVERSE
CURRENT, RRM

Tj = -40C to +125C

Tj = 125C

50
50
50
50
50
50
50
50
50
50
50
50
50
50
50

100 Volts

200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

Peak Forward Current, I FM (T c = +65C, Half Sine Wave Pulse Base Width = 8.3 msec, D.F. 50%)
Peak One-Cycle Surge (Non-Repetitive), Forward Current, I
FSM

Minimum

I t Rating (See Curve 11),

Thermal Resistance, R0 JC (D.C.)
Storage Temperature, T stg

>

msec. (Non-Repetitive)

105,000

(RMS

mA

1,700 Amperes

10,000 Amperes
Ampere) 2 Seconds

06C/Watt

40 c t0 +150 c
-40C to +125C
2000 Lbs + 10%
_

Operating Junction Temperature, Tj

Mounting Force Required

8.9KN+ 10%
NOTES:
1

Assumes

a heatsink thermal resistance of less than 2.0C/watt.

2 Non-repetitive voltage

and current ratings, as contrasted to repetitive ratings, apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-repetition ratings that are used in fault coordination work.
3 Assumes a heatsink thermal resistance of
less than 1.0C/watt.

603

DEVICE SPECIFICATIONS

A437

3,000

==

V.^

10,000

**i s
5,000

<

^a

""I

">

-.

2,000
1,000

<J

50

h'

f/

I
s

'

sj

P*

XV

PER SEC

400

^2,000* 1,000
3,300

60

25 # C

/ /

2
2

/ /
/
2.0

1.0

4.0

3.0

5.0

100

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

v>

Sj
>J

NN\

*" -i""H0.000

<

TT

1.

**

//

Tj -I25*C

200
100

a.

//
//

^ S V^

:^

a
500

V^V

MAXIMUM FORWARD CHARACTERISTICS

10,000

1,000

MICROSECONDS

SINUSOIDAL PULSE BASE WIDTH

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT SINUSOIDAL WAVEFORM
(T c = 65C) DOUBLE SIDE COOLED

10,000

10,000

.SES PER SEC

- -

2.5

's60

WATTS -SEC

^n\

PER PULSE

>

0.25
UJ

a.

Q.

3
I
a.

400
sJ,C00

1,000

""

s
UJ

dJOCX

-J>0,000

UJ

1,000

5.500
a.

3i

100
100
-

100.

10,000

1,000

SINUSOIDAL PULSE BASE WIDTH

100

MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT SINUSOIDAL WAVEFORM
(T c = 90C)
i

10,000

60^

1,000
2 ,00 a v

PULSUS PFRSFC

to

'

PULSES PER SEC

400

_^
--

\^

nnr>\

2,00

W
s

(Tj = 125C)

....

10,000

1,000

'
'.

300

3,660

300

SINUSOIDAL PULSE ENERGY

I0,

4.

10,000

MICROSECONDS

DOUBLE SIDE COOLED

1,000

SINUSOIDAL PULSE BASE WIDTH

'

1,

3,3

000

vX, >'

N>.

1,000

\ \%N
vX.
vN \
X
,

->,

10.000
-"
1

20,000

*+.'-'-

',

>

I
S

ioq

100

TRAPEZOIDAL PULSE BASE WIOTH

1,000

10,000

IOQ
><

MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT, TRAPEZOIDAL WAVEFORM
(T c = 65C) DOUBLE SIDE COOLED
DI/DT (RISING & FALLING) = 100 A/juS

100

TRAPEZOIDAL PULSE BASE WIDTH

604

1,000

MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD

CURRENT, TRAPEZOIDAL WAVEFORM
(T c = 90C) DOUBLE SIDE COOLED

10,000

DEVICE SPECIFICATIONS
QOOO

A437

-\
.

10.0
L

no

L2.5\

Ot

V\

MM
FM =IOOOA^

IN

WATTS-SEC
PER PULSE

I
I

'""

2 200

c).Z 5

ioo

a.
J.

50

1,000
1

100
1,000

100

TRAPEZOIDAL PULSE BASE WIDTH

10,000

REVERSE

TRAPEZOIDAL PULSE ENERGY DI/DT

& FALLING) = 100A//IS (T, = 125C)

7.

8.

10

MICROSECONDS

dl/dt

20

50

100

(AMPERES/MICROSECONOI

MAXIMUM RECOVERED CHARGE

(Tj = 125 C)

(RISING

U.I

IJ

TT

>

I
I

If

J
J

0.01

|l

---1
T
T
t

0001

"

7
T
7

REVERSE RECOVERED CHARGE

9.

-inooi
0.0001

1000

100

10

R(REC)

IN

H-

0.01

0.1

1.0

10

TIME - SECONDS

TYPICAL "S" FACTOR VERSUS RECOVERY

CHARGE

0.001

COULOMBS

TRANSIENT THERMAL IMPEDANCE -

10.

JUNCTION-TO-CASE, DOUBLE SIDE COOLED

(Tj = 125C)

800

600

400
I as 300
200

IOO

70

20

I
2

PULSE WIOTH-MILLISECONDS

11.

SUB-CYCLE SURGE FORWARD CURRENT

AND 2 t RATINGS VERSUS PULSE TIME
FOLLOWING RATED LOAD CONDITIONS
l

605

A437

OUTLINE DRAWING

METRIC

INCHES

MM

SYM.
MIN.

.0 3
2 2 4
.0 7

E
F

Q$\*

MAX.

MIN.

1.333 1.343
.13 5 .14 5
.0
e 1.065

TYP.
IP.

MAX.
3

3.86
3.4

2.300

7.0

8.4 2
4.0 6

.7 6

6.89

3.5 5

.0 9

3.6 8

5.85

.110

3 4.1

SEATING PLANES
FLAT WITHIN .001 TOTAL

TYP.

(.03

MM)

MOUNTING INSTRUCTIONS
The General

Electric

Company

offers the Series 2500, Press Pak,

to facilitate single- or double-side cooling of

all

GE

mounting clamp designed

Press pak's.

Special features of this clamp:

Metal pivot insuring constant pressure

in rugged applications over long periods.

One-piece phenolic insulator gives 1" nominal creep distance.
Use of special Force Indicator Gauge eliminates need for torque wrenches,

in-

accurate "flex" gauges, and guesswork.

Various bolt lengths available to accommodate most mounting situations.
No loose parts to complicate assembly.
Stiffening brace to reinforce heat sink available
Single-side cooling terminal available

upon

upon request.

request.

Positive, non-binding swivel action.

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When

the Press-Pak

assembled to a heat sink in accord-

is

Sand each surface

with 600

to

and low thermal resistance interface

SF1154 200 centistoke viscosity)

(GE G322L or Dow Corning DC

1.

will result:

should be

within .0005 inch/inch

flat

face finish of

and have a

assembly.

Clean

off and

grit

paper just prior

apply silicone

oil

(GE

or silicone grease

3, 4, 340 or 640).
Clean off and apply again as a thin film. (A thick film

Check each mating surface for nicks, scratches, flatness

and surface finish. The heat dissipator mating surfaces

will

lightly

ance with the following general instructions, a reliable and

sur-

adversely

affect

the

electrical

and

thermal

resistances.)

63 micro-inches.

Assemble with the specified mounting force applied

2. It

is

recommended

that the heat dissipator mounting

through a

self-leveling, swivel

connection. The force has

surfaces be plated with nickel, tin or silver. Bare alumi-

to be evenly distributed over the full area. Center holes

num

on both top and bottom of the Press-Pak

or copper surfaces will oxidize in time resulting

in excessively high

thermal resistance.

ing purposes only.

606

are for locat-

Silicon

RECTIFIER
3000 Volts 740 Amps Avg.
The A500

Series of high

multi-diffused

power

technology

rectifier diodes feature the

new General

in

newly developed,

Electric pressure-mounted

package.

FEATURES:

High Current, High Voltage

Pressure Contacts

Glazed Ceramic Package with

Reversibility (eliminates

Hermetic Seal

Available in Factory Assembled Heat Exchangers or Ready-to-Mount

IMPORTANT: Mounting

"

Creepage Path

need for special reverse polarity units)

instructions

on the

last

page of the C501 specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK REVERSE

NON-REPETITIVE REVERSE

VOLTAGE, V RRM

VOLTAGE, V RSM

TYPE

Tj = -40C to +175C

A500LP
A500LT
A500LN
A500LS
A500LM
A500LE
A500LD
A500LC
A500LB
A500LA
A500L
A500PT
A500PN
A500PS
A500PM

Tj = 0C

3000 Volts
2900
2800
2700
2600
2500
2400
2300
2200
2100
2000
1900
1800
1700
1600

1900
1800
1700

2
2

2600 Volts
2500
2400
2300
2200
2100
2000
1900
1800
1700
1600
1500
1400
1300
1200

740 Amperes,

Peak One-Cycle Surge Current

I

+175C

3100 Volts
3000
2900
2800
2700
2600
2500
2400
2300
2200
2100
2000

Average Forward Current

Minimum
Minimum

to

v rrm/v rsm
Tj = -40C to +200C

1<I>

Rating

(for times

Rating

(at 8.3

>

2
363,000 Ampere Seconds
415,000 Ampere 2 Seconds

1.5 msec)

msec)

Maximum Forward

Voltage Drop (T c = 150C, 1000 Amps. Peak)

Peak Reverse Leakage Current (Tj = 175C, V = Rated VRRM )

Maximum Thermal

Resistance,

Storage Temperature,

Average

10,000 Amperes

R#js (10)

1.26 Volts

35mA
0.06C/Watt

(Double-Side Cooling)

T STG

-40C to +200C

Operating Temperature, Tj

2200
98

Mounting Force Required

NOTES:

to

+175 C

10%
10%

Lbs.

KN

a heatsink thermal resistance of less than l.lC/watt.

Assumes

Non-recurrent voltage and current ratings, as contrasted to repetitive ratings which apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-recurrent ratings that are used in fault coordination work.

607

A500
,200

Tj

160

140

-175'C

^-75%

^3

CYCLE =6.75 ^

25%S

80

(3

12

DOUE LE

- SIOI

1/2%

1/3%"

COOLII 6

2 40
20
100

200
300
400
500
600
AVERAGE FORWARD CURRENT- AMPERES

AVERAGE FORWARD CURRENT VERSUS

MAXIMUM ALLOWABLE SINK TEMPERATURE

1.

TOO

800

700

2.

250
AVERAGE

400
500
600
700
300
FORWARD CURRENT - AMPERES

800

AVERAGE FORWARD POWER DISSIPATION

VERSUS AVERAGE FORWARD CURRENT

200

I80
I60

IE

I40
.

>$

I20

DC

<

o
u
_i
o

>0-e-

I00

3^

* 80

9
< 60

e-e-

I 40
x
2

<

ICO

3.

200
AVERAGE

300

FORWARD

400
500
600
CURRENT
AMPERES

700

MAXIMUM HEAT EXCHANGER TEMPERATURE

VERSUS AVERAGE FORWARD CURRENT
FOR DOUBLE-SIDE COOLING

NOTES:
1.

R 8J C.

Power "D" adds .01C/W to account for both case to

when properly mounted; e.g., R0js
= .06C/W. See Mounting Instructions.
DC Thermal Impedance is based on average full cycle

dissipator interfaces,

05
c/v1

z
<

2.

junction temperature. Instantaneous junction temperature

may be calculated using the following modifications.
^^-

r*

I
OOI

Ol

1.

.1

end of conducting portion of cycle

- 120 sq. wave add .0065C/W along entire curve
180 sq, wave add ,0047C/W along entire curve
- 180sine wave add .0026 t/W along entire curve

end of full cycle

any wave, subtract .0026C/W along entire curve

TIME -SECONDS

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE
608

A500
10,000

8,000

COULtL)

SINGLE -SIDE COOLED

5.

56789K)

(A/us)

CYCLES (S) 60

REVERSE RECOVERY CHARACTERISTICS

HZ.

MAXIMUM SURGE CURRENT FOLLOWING

6.

RATED LOAD CONDITIONS

500

10,000

^^^Z

o|300
2

25 C

TJ

<
CO

-|ioo

/J
/

/ /
K
2
cc ui

o<

/
/

|3

/
2

PULSE TIME MILLISECONDS

10

INSTANTANEOUS

FORWARD VOLTAGE

5
-

VOLTS

SUBCYCLE PEAK SURGE FORWARD

MAXIMUM ON-STATE CHARACTERISTICS
8.
CURRENT AND 2 t RATING
FOLLOWING RATED LOAD CONDITIONS
OUTLINE DRAWING
l

NOTE'

GLAZED CERAMIC INSULATOR

WITH 1.00 INCH MIN. SURFACE
CREERAGE (25.40mm)

I.

INCHES

9TMBOL

0A
0B
C

609

MAX

MIN

MAX

2000

50.80

1.240 1.260 31.50

1.000 1.060

300
2540 2692

080

2.03

3>E

0.136

034

MILLIMETERS

MIN

146 3.45

086

71

Silicon

RECTIFIER
2400 Volts 1000 Amps Avg.

The A540

Series of high

multi-diffusion

power

rectifier

technology in a

diodes feature the newly developed,

Electric pressure-mounted

new General

package.

FEATURES:

High Current, High Voltage

Pressure Contacts

Glazed Ceramic Package with l" Creepage Path

Reversibility (eliminates

Hermetic Seal

Availabile in Factory

IMPORTANT: Mounting

need for special reverse polarity units)

Assembled Heat Exchangers or Ready-to-Mount

instructions

on the

last

page of the C501 specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK REVERSE

NON-REPETITIVE REVERSE

VOLTAGE, V RRM

VOLTAGE. V RSM

Tj = -40C to +185C

Tj = 0C to +185C

2400 Volts
2300
2200
2100
2000

2500 Volts
2400
2300
2200
2100

TYPE

A540LD
A540LC
A540LB
A540LA
A540L
Lower

voltages available

2000 Volts
1950
1850
1750
1700

consult factory.

Average Forward Current

Peak One-Cycle Surge Current

Minimum I 2 t Rating (for times > 1.5 msec)

Minimum I 2 t Rating (at 8.3 msec)
Maximum Forward Voltage Drop (T c = 160C

1000 Amperes, 1$ Average

12,000 Amperes
2
285,000 Ampere Seconds
597,000 Ampere
Case Temperature, 1000 Amps. Peak)

Peak Reverse Leakage Current (T, = 200C, V = Rated VRRM )

Maximum Thermal Resistance, Rg JS (Double-Side Cooling)
Storage Temperature,

v rrm/ v rsm
Tj = 185C to 200C

T STG

Seconds

1.08 Volts

35mA
0.06C/Watt
-40C to +200C

Operating Junction Temperature, Tj

-40C to +200C
Lbs. 10%

Mounting Force Required

2200

9.8

KN

10%

NOTES:
1

Assumes

Non-recurrent voltage and current ratings, as contrasted to repetitive ratings which apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-recurrent ratings that are used in fault coordination work.

a heatsink thermal resistance of less than l.lC/watt.

610

A540

DC

A540 DIODE
'3,000

g
fee
1

AS 40 FORWARD CHARACTERISTICS

a.

7 /,

< 10,000
~
8,000
t-

6,000

it!

4,000

<J

2,000

^f

S 2,000
*
o

1,000

800
600
400

1,000

/
'

100

6i

7A
s
/* V/

^
>1
/ IT

//
f

200

10

2.0

2400

800
1,600
AVERAGE FORWARD CURRENT - AMPERES

3.0

Vtm (VOLTS)

AVERAGE FORWARD POWER DISSIPATION

VERSUS AVERAGE FORWARD CURRENT

MAXIMUM ON-STATE CHARACTERISTICS

1.

S.

160 C

200
1

A540 DIODE
DOUBLE -SIDE COOLING

*
* MEASU RED

1/8" FF

VM

BASE

150

100

V
\

50

3*

6<p

800

"l<t>

DC

1,600

AVERAGE FORWARD CURRENT

AMPERES

MAXIMUM HEAT EXCHANGER TEMPERATURE

VERSUS AVERAGE FORWARD CURRENT
FOR DOUBLE-SIDE COOLING

*
u

NOTES:
- H

jc

1.

CA

OS -

M
U

z
<
2 .

Power "D" adds .01C/W

dissipator interfaces,

2.

JE-

e.g.,

Rf3js

DC Thermal Impedance is based on average full cycle

junction temperature. Instantaneous junction temperature
may be calculated using the following modifications.

end of conducting portion of cycle

120 sq. wave add ,0065C/W along entire curve
- 180 sq, wave add ,0047C/W along entire curve
180sinewaveadd .0026 t/W along entire curve

end of full cycle

- any wave, subtract .0026C/W along entire curve

.001
.1

account for both case to

= .06C/W. See Mounting Instructions.

^
**

-Ol

to

when properly mounted;

I.

TIME- SECONDS

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

611

A540

T 700
IOO0

1*.

10

Abl

S w 300

DOUBLE SIDE COOLING

PSS400

A540 DIODE

m
bl
K
bl

1
1

^540 DIODE

2; g3oo
SSSZOO

'

ISO

I.

HALF SINUSOIDAL WAVEFORM

100

zu 70
K
<iuc
40

|33

^bil 30

<-l

"35

20
5

f>

56789

J2

20

10

PULSE TIME -MILLISECONDS

CYCLES AT 6OH2

SUBCYCLE PEAK SURGE FORWARD CURRENT

AND 2 t RATING FOLLOWING
RATED LOAD CONDITIONS

MAXIMUM SURGE CURRENT FOLLOWING

RATED LOAD CONDITIONS

OUTLINE DRAWING

NOTE'
I

GLAZED CERAMIC INSULATOR

WITH 1.00 INCH MIN. SURFACE
CREEPAGE (25.40mm)
INCHES

STMBOL

0A
08

2.000

MILLIMETERS

MIN

MAX

1.240 1.260 31.50 32.00

1.000

1060 25.40 2692

O80

2.03

0.136 0.146 3.45

3 71

IIOTC

50.80

612

MAX

0E

MIN

.034

086

10

Silicon

RECTIFIER

600 Volts 1500AAvg.

The A570

Series of high

diffused construction
package.

power

rectifier

diodes feature the proven, alloyElectric pressure-mounted

new General

used in a

FEATURES:

High Current Rectifier

Pressure Contacts

Glazed Ceramic Package with

Reversibility (eliminates need for special reverse polarity units)

"

Creepage Path

Hermetic Seal

Available in Factory Assembled Heat Exchangers or Ready-to-Mount

IMPORTANT: Mounting

instructions

on the

last

page of the C501 specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK REVERSE VOLTAGE

TYPE

V RRM

A570M

Tj = -40C to +200C

600 Volts
500
400
300
200
100

A570E
A570D
A570C
A570B
A570A

700 Volts
600
500
400
300
200

Average Forward Current

Peak One-Cycle Surge Current

Minimum
Minimum

(for times

(at

2
I

>

1500 Amperes, 1$ Average

1800 o Amperes
1,050,000 Ampere 2 Seconds

1.5 msec)

8.3msec)

1,300,000 Ampere

Peak Forward Voltage Drop (T c = 160C, 1000 Amps. Peak)

Peak Reverse Leakage Current (Tj = 200C, V = Rated V
RRM )
Maximum Thermal Resistance, Rg, s (Double-Side Cooling)
Storage Temperature,

NON-REPETITIVE PEAK REVERSE VOLTAGE

'RSM Tj = 0C to +200C

T stg

Operating Junction Temperature, Tj

Seconds

0.96 Volts

50

mA

06C/Watt

40 c to +2 00C
-40C to +200C
2200 Lbs. + 10%

Mounting Force Required

9.8

KN

10%

NOTES:
1

Assumes a heatsink thermal

Non-recurrent voltage and current ratings, as contrasted to repetitive ratings which apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-recurrent ratings are non-recurrent retings that are used in fault coordination work.

resistance of less than 1.0C/watt.

613

A570
DC
I

A570 DIODE

52,000

A570 FORWARD CONDUCTION

T.

25C

10,000

60
160 c

1,500

5,000

1,000

|
a.

500

u.

500

200

500

50

2jO

1.0

ON STATE VOLTAGE-VOLTS

MAXIMUM ON-STATE CHARACTERISTICS

1.

*'

200

1,500
-

AMPERES

AVERAGE FORWARD POWER DISSIPATION

VERSUS AVERAGE FORWARD CURRENT

2.

A570 DIODE

'measured

1,000

FORWARD CURRENT

AVERAGE

/8 FR DM

BASE

150

100

50

60\
500

1,000

3<i\

1,500

sV

51

DC

2,000

AVERAGE FORWARD CURRENT-AMPERES

3.

2,500

MAXIMUM HEAT EXCHANGER TEMPERATURE

VERSUS AVERAGE FORWARD CURRENT
FOR DOUBLE-SIDE COOLING
,

NOTES:

0J C

1.

r'W

u
u
z
<

'

Power "D" adds .01C/W to account for both case to

when properly mounted; e.g., R0js
= .06C/W. See Mounting Instructions.

dissipator interfaces,

.08
2.

.01

o.

DC Thermal Impedance is based on average full cycle

junction temperature. Instantaneous junction temperature
may be calculated using the following modifications.

.001
.01

end of conducting portion of cycle

- 1 20 sq. wave add .0065C/W along entire curve
- 180 sq, wave add ,0047C/W along entire curve
- 180sine wave add .0026 t/W along entire curve
end of full cycle
- any wave, subtract .0026C/W along entire curve

.1

TIME -SECONDS

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

614

2,000

A570

u
tn

(9

1000

100

'J

50

"

5S
5

-*-*-^.o

10

CYCLES AT 60

HZ.

10

PULSE TIME -MILL/SECONDS

5.

MAXIMUM SURGE CURRENT FOLLOWING

SUB-CYCLE PEAK SURGE ON-STATE CURRENT

AND 2 t RATING FOLLOWING
RATED LOAD CONDITIONS

6.

RATED LOAD CONDITIONS

OUTLINE DRAWING

N0TE
GLAZED CERAMIC INSULATOR
WITH 00 INCH MIN. SURFACE
CREEPAGE (25.40mm)
:

SYMBOL

0A
0B

INCHES

MAX

MIN

MAX

2000

50.80

1.240 1.260 31.50 32.00

1.000

O80

<Z>E

MILLIMETERS

MIN

0.136

034

1060 25.40 2692

2.03

146 3.45

3.71

086

I
615

High Speed

Fast Recovery Rectifier

750A

Avg.,

Up

to

1400

Volts

The A596 high power

applications

A596

is

rectifier diode is designed for use in high frequency

or wherever a fast/soft recovery performance is required. The

KHz.

rated to 5

FEATURES:

Reverse Blocking Voltage to 1200 Volts

Low

Soft Recovery With

Pressure Contacts

Diffused Construction

Glazed Ceramic Package with l" Creepage Path

Recovered Charge

Reversibility (eliminates need for special reverse polarity units)

Fully Characterized to 5

Available in Factory Assembled Heat Exchangers or Ready-to-Mount

IMPORTANT: Mounting

KHz

instructions

on the

last

page of the C501 specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK REVERSE

TYPES

VOLTAGE, V RRM

Tj = -40C to +175C

A596N
A596T

TRANSIENT PEAK REVERSE

VOLTAGE, V RSM 2 (NONRECURRENT 5 MSEC MAX.)

Tj - -40C to +175C

125C

150 C

175C

900 Volts
1000
1100

15mA

40mA

125mA

15

40
40
40
40
50
60

125

800 Volts
900
1000
1100
1200
1300
1400

A596P
A596PA
A596PB
A596PC
A596PD

PEAK REVERSE LEAKAGE CURRENT

15

1200
1300
1400

15

1500

20

15

16

125
125
125

150
175

750 Amperes,

Average Forward Current

Peak One-Cycle Surge Current

Minimum 2 t Rating (for times > 1.5 msec)

Minimum I 2 t Rating (at 8.3 msec)
Maximum On-State Voltage Drop (I TM = 3500 Amps, Tj = 125C)
Maximum Thermal Resistance, R# JS (10) (Double-Side Cooling)
Storage Temperature, T STG
I

14>

Average

10,000 Amperes
2
320,000 Ampere Seconds
2
415,000 Ampere Seconds
2.3 Volts

0.06C/Watt
-40 C to

+200C

Operating Temperature, Tj

-40C to +175C

Mounting Force Required

2200 Lbs. 10%

9.8 KN 10%

NOTES:
heatsink Thermal Resistance of. less than l.lC/watt.

Assumes

Non-recurrent voltage and current ratings, as contrasted to repetitive ratings which apply for occasional or unpredictable overloads. For
example, the forward surge current ratings are non-recurrent ratings that are used in fault coordination work.

616

MAXIMUM ALLOWABLE PEAK CURRENT

1.

VS.

PULSE

BASE^TH

(T,

200
MAXIMUM ALLOWABLE PEAK CURRENT

<

65C/'

MAXIMUM ALLOWABLE PEAK CURRENT

VERSUS PULSE BASE WIDTH

2.

I.OOO^s
VS.

PULSE BASE WIDTH

-90C

MAXIMUM ALLOWABLE PEAK CURRENT

VERSUS PULSE BASE WIDTH

(T s = 65C)

(TS

(T s = 90C)

1,000

100

CURRENT PULSE
3.

1,000

DURATION, T

3,000

MICROSECONDS

10

8,000

100

1,000

di/dt (A/M s)

ENERGY PER PULSE FOR SINUSOIDAL PULSES

MAXIMUM RECOVERY CURRENT (LEFT HAND SCALE)

AND MAXIMUM RECOVERY CHARGE (RIGHT HAND SCALE)
4.

.09

NOTES:

.05 C/\ 1

1.

Add .01C/W
interfaces,

-oi

2.

K
hi
X

to

account for both case to dissipator

when properly mounted;

e.g.,

Rfljs = -06

C/W. See Mounting Instructions.

DC Thermal Impedance is based on average

full cycle
junction temperature. Instantaneous junction temperature may be calculated using the following modi-

fications.

.OOI
o\

I.

end of conducting portion of cycle

120 sq. wave add .0065C/W along entire curve
180 sq. wave add .0047C/W along entire curve
1 80 sine wave add .0026C/W along entire curve

end of full cycle

any wave, subtract .0026C/W along entire curve

TIME- SECONDS
5.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE
617

A596
10,000

^f^*i*^

q g 300

<
fj

I40C

50
lj

is

v.

o<
5
Su.

.95

1.0

1.5

2.0

2.5

3.0

20

"

3.5

6.

MAXIMUM ON-STATE CHARACTERISTICS

7.

SUBCYCLE PEAK SURGE FORWARD

CURRENT AND 2 t RATING
FOLLOWING RATED LOAD CONDITIONS
l

OUTLINE DRAWING

NOTE'
I.

GLAZED CERAMIC INSULATOR

WITH 1.00 INCH MIN. SURFACE
CREEPAGE (25.40mm)
INCHES

SYMBOL

TERMINAL

0A
0B

PLATED
SURFACE
c

456789K)

PULSE TIME -MILLISECONDS

INSTANTANEOUS FORWARD VOLTAGE -VOLTS

MIN

MAX

2.000

50.80

1.240 1.260

31.

SO 32.00

1.000 1.060 25.40

080

618

MAX

0E

MILLIMETERS

MIN

0.156 0.146 3.45

034

2692

2.03

066

71

High Power

Silicon

A640

Rectifier
1500AAvg.

2100 Volts

The A640

Series of high

multi-diffused

power

technology

in

rectifier diodes feature the

new General

newly developed,

Electric pressure-mounted

package.

FEATURES:

High Current, High Voltage

Pressure Contacts

Glazed Ceramic Package with

Reversibility (eliminates

1
" Creepage Path
need for special reverse polarity units)

Hermetic Seal

Available in Factory Assembled Heat Exchangers or Ready-to -Mount

IMPORTANT: Mounting

instructions

on the

last

page of the C501 specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE V RRM

TYPE

Tj = -40C to +200C

2100 Volts
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000

1800 Volts
1700

A640LA
A640L
A640PT
A640PN
A640PS

A640PM
A640PE
A640PD
A640PC
A640PB
A640PA
A640P

Peak One-Cycle Surge Current

Minimum I 2 t Rating (at 8.3 msec)
On-State Voltage Drop

900
800
700

1,062,000 Ampere

1000 Amps.)
Peak Reverse Leakage Current (Tj = 200C, V = Rated
Maximum Thermal Resistance (Double-Side Cooling)
Storage Temperature,

1600
1500
1400
1300
1200
1100
1000

1500 Amperes, 1$ Average

1 6,000 Amperes

Average Forward Current

Maximum

Tj = 0C to +185C

Seconds

0.935 Volts

(at

VRRM )

50mA
0.045C/Watt
-40C to +200C

T STG

Operating Junction Temperature, Tj

-40C to +200C

Mounting Force Required

4000

Lbs.

17.8

NOTES:
1

Assumes

10%

KN 10%

a heatsink dissipation of less than l.lC/watt.

619

A640
200

y
I

190
i80
180
170

200

160

| 150
no
^ 130
w 120
x 10
1 ICO

I
I

Tj

160

<
o

6<t>,60

150

SINGLE SI
COOLING

W//M

^N ^

^> ^v \;
\ T!
^V

W//

90
BO
70

90
80
70
60

<h
ui

,,

4
I

DC

60

100

3Pt

I60C

2 120
UJ
no

ui
Q.

<(>. 30
CONDUCTION

T.

^ "^ ^>
^ ^ 5?
V>
130
N ^N

CONDUCTION
12

'

uj

3 $,120"
CONDUCTION

190
180
170
160

I
I

40
30
20

>,

s**

^^

'V
\\ V.
^ Vv s S
*

s
s.

I2PH

Ss

6PH

3PH

DC

20
10

10

500
AVERAGE FORWARD CURRENT

1,000
-

"0

1,500

MAXIMUM ALLOWABLE HEAT SINK

TEMPERATURE FOR SINUSOIDAL COOLING
WAVEFORM - SINGLE-SIDE COOLING

1.

1,500

CURRENT WAVEFORMS

1,400
1,300

w Wf

L500
500
1,000
AVERAGE FORWARD CURRENT -AMPERES

AMPERES

'

I2PH

2.

MAXIMUM ALLOWABLE HEAT SINK

TEMPERATURE FOR SINUSOIDAL CURRENT
WAVEFORM - DOUBLE-SIDE COOLING

'

6PH

120 CONDUCTION

<{>,

2,000

Tj

60 C

3 PH,

1200
6

w,

1,100

<P

60C0NDUCTI0N

12

PH

6PH

3PH

DC

IjOOO
12

900
800

ft

*, 30 C ONC UCTIOri

DC

700

600
T

500

I60C

1,000

400

300

/,

200
100

300
400
500
600
700
800
AVERAGE FORWARD CURRENT - AMPERES

200

100

3.

900

500
IJDOO
1,500
AVERAGE FORWARD CURRENT -AMPERES

1,000

AVERAGE POWER DISSIPATION CURVES

EXTENSED SINUSOIDAL POWER

DISSIPATION CURVES
200

200
190
180
170
160

Tj

190
o l80
170

160 C

T.

I60C

LUI60
= 150

150
140

140
130

130
120

%^
,s
^^

110

100

90
80
70
60
50
40
30
20

2,000

^1

N^
X s^ S

N^j
61/4

5%

121/2%

5C

33 I/3K,

1-

MO

100

55

90

N75%
50%

u 80
m 70
DC

6 /47

* 60

75%

12

1/2% 25/ 33 1/3%

DC

10

500
1,000
AVERAGE FORWARD CURRENT -AMPERES

1,500

MAXIMUM ALLOWABLE HEAT SINK

TEMPERATURE FOR RECTANGULAR CURRENT
WAVEFORMS - SINGLE-SIDE COOLING

6.

620

500
1,000
1,500
AVERAGE FORWARD CURRENT-AMPERES

2,00

MAXIMUM ALLOWABLE HEAT SINK

TEMPERATURE FOR RECTANGULAR CURRENT
WAVEFORMS - DOUBLE-SIDE COOLING

A640
1,500

3,000
Tij

1,400

2300

Tj.'

1,300

2,600

160* C

tn
l

'

200

t 2400
* 2,200

fe

1,100

6 1/4%

12

1/2%

25%

1,000

2,000

2 900

1,800

S>

1,600

UJ

!pDC

tn

<n

800

<r

700

L-75%

50%

a.

DC,

3 31/3%

50%

1,400

UJ

600

^33

g
"

500
400

1,200
1,000

Ul

300

800

600

200
100

200

200 300 400 500 600

700 800
AVERAGE FORWARD CURRENT - AMPERES

100

900

500
1,000
1,500
AVERAGE FORWARD CURRENT - AMPERES

1,000

POWER DISSIPATION FOR RECTANGULAR

CURRENT WAVEFORMS

7.

2 POO

EXTENDED POWER DISSIPATION CURVES FOR

RECTANGULAR CURRENT WAVEFORMS

*I4
i*

\-

;o hz.

It!

<
6
I.5XI0

50 HZ.

^\

1
.

RESISTIVE
R

C IRCUIT

ZER0

10X106

8X10

l
2

7 8

90

20

TIME BASE WIDTH OF HALF SINE WAVE

NUMBER OF SUCCESSIVE HALF CYCLES

10

(MILLISECONDS)
9.

SUBCYCLE SURGE CURRENT

.06
III
il'l
1

10.

MULTICYCLE SURGE CURRENT

II
i

NOTES:
1. Add .0075C/W to account for both case to dissipator
interfaces when properly mounted; e.g., R$js =

z ejc

DC
C/W

.045C/W.
.01

2.

"

^^"

DC Thermal Impedance is based on average full cycle

junction temperature. Instantaneous junction temperature may be calculated using the following modifications:

end of conducting portion of cycle

1 20 sq. wave add .0044C/W along entire curve
180 sq. wave add .0032C/W along entire curve
180 sine wave add .0018C/W along entire curve

end of full cycle

any wave, subtract .001 8 C/W along entire curve

.001
.01

TIME-SECONDS
11.

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

621

A640
1,000

[in

V 1000 A PEAK

Vdi/dt

-"235?

NEC

^.&
X777/77)7P*'

<
-100

v///
R

Ff

^^^

-"^"S
?:,'^

^_---"

or

';-.--

iji

-r

10,0000

t^I5

.ooo

fs

I00
I00
..

10

I.

REVERSE DI/DT (AMPS/ps)

12.

TYPICAL REVERSE RECOVERY

CHARACTERISTICS

OUTLINE DRAWING
METFIIC

DECI YIAL
INCI -IES

SYM

MIN.

.240

.260

.110

.130

.245

.186

.191

.060

.075

1.524

1.430 j

G
H

I
622

6.604
3.302
4.851

1.905
27.051

.011

.030

2.500
.019
.130

.056

.060

1.000

1.065

.030

.096

762

2.438

.130

.150

3.302

1.300

1.345

3.810
34.16

S
OF

MAX.

36.32

1.065

2.200

STRAIGHT LEAD

MIN.
6.096
2.794
6.223
4.724

T= LENGTH

M.IV1.

MAX.

55.88
2.794

63.50
3.483

.762

3.302

422

25.40

33.02

2.150
.067

.083

1.524

27.05

54.61

1.702

2.11

HIGH SPEED
Fast Recovery Rectifier

2000 Volts

A696

1000 Amps

The A696

Series of high power rectifier diodes is designed for use in high

frequency applications (up to 5 KHz); or wherever a fast/soft recovery performance is required. It is recommended as a companion feedback device

for the

C712

thyristor.

FEATURES:
Reverse blocking voltage to 2000 Volts

Reversibility (eliminates

Press-Pak Design for Double-Side Cooling

Available in Factory Assembled Heat Exchangers or Ready-to-Mount

Glazed Ceramic Package with l" Creepage Path

Three Microseconds Typical Recovery Time

need for

special reverse polarity units)

MAXIMUM ALLOWABLE RATINGS

REPETITIVE V RRM

TYPE

REPETITIVE V RRM 1

Tj = -40C to +150C

Tj = 0C to +150C

2000 Volts
1900

2100 Volts
2000
1900
1800
1700
1600

A696L
A696PT
A696PN

1800
1700
1600

A696PS

A696PM
A696PE

1500

1000 Amperes,

Average Forward Current

Peak One-Cycle Surge Current

Maximum

On-State Voltage Drop (at 1000 Amps, 25C)

Peak Reverse Leakage Current (Tj = 150C, V = Rated VRRM )

Maximum Thermal

Resistance, Rfljc, Double-Side Cooling

Storage Temperature,

14>

Average

4,000 Amperes
1.9 Volt

50 mA
036C/Watt

(DC)

Tstg

-40C to +150C
-40C to +150C

Operating Junction Temperature, Tj

- 4200 Lbs.
15.6 -18.7Kn

3500

Mounting Force Required

Consult Factory

Switching, Conduction and Recovery Losses

NOTE:
1

Assumes

a heatsink dissipation of less than l.lC/watt.

OUTLINE DRAWING
DECK AAL

SYM
A

INCI lES
MAX.
MIN.
.240
.260
.110
.130

.245

.186

.191

.060

.075

2.200

.011

.030

1.430
1.065
2.500
.019
.130

55.88
2.794
.762

zc

\J

lX>\

MIN
CUE E PACE

j|kp TYP
T= LENGTH

_L

.056

1.000

.030

.130

1.300

Of

STRAIGHT LEAO

R
T

623

M.N
MIN.
6.096
2.794
6.223
4.724
1.524

N
"

METP IC

.067

.060
1.065
.096
.150
1.345
2.150
.083

MAX.
6.604
3 302
4.851

1.905
36.32
27.051
63.50

3483

422

3.302
1.524

25.40
.762
3.302
33.02

27.05
2.438
3.810
34.16

54.61
1.702

2.11

The reliable

rectifier

jpfci

i*

't'

:,

The best way

to

assure

reliability in

current rectifier pellet

package

~m

it

is

to

that really protects

put
it.

a lowin a

it

Protects

from shock, humidity, vibration and

temperature.

And

that's just

what we do with General

1-amp (A14) and

Electric's glassivated

3-amp (A15)

rectifiers. Solid glass provides passivation and protection of the

silicon pellet's P-N junction
no organic
material is present within the hermetically
sealed package. In addition, rigid mechanical support and excellent thermal characteristics are provided by the dual heat sink
construction.

For high-frequency applications, GE offers a fastrecovery rectifier, the 1-amp A114, with a 200 nsec.
max. reverse recovery.

624

Silicon

A2011

Rectifier

Stacks

Up to 99% certain applications.

Excellent Regulation Forward voltage drops of less than one volt per
Low Leakage Excellent for magnetic amplifier applications.
Wide Range of Operating and Storage Temperatures Will operate from 65C to 175C.
no transformer taps required high reliability.
No Aging Extremely long
Rugged Construction Meets stringent military environmental tests.
Small Size Greatly reduces space and weight requirements.
Complete Packaged Rectifier Circuit Requires only mounting bolts and electrical conHigh Efficiency

in

cell.

life

nections.

No

special fin design or insulating hardware.

Dependability Backed by a General Electric one year written warranty.

Versatility 140 stacked combinations with DC outputs up to 32.4 amperes
variety of circuit conditions. Special circuits can be designed to your order.

625

to

meet a

A2011

y\

TYPICAL

>

\/J
3 wo
-MAXIMUM

i
1

MAXIMUM AND TYPICAL

INSTANTANEOUS
FORWARD QUMCTERISTICS

f
1

\\
.1

R INDUC TIVE S EA LEV

.ED AIR 1 INDELEV ATEOTEMPEATU
RJ TING A r MAXIM UM VOLTAGE

STIVE
RES
FORC

el\

if
1

1*
i

JOO'C

T'

80

120

100

140
i

AMBIENT TEMPERATURE- C

1.0

.5

1.5

2.0

2.5

3.0

3.5

4.0

4.5

INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS

CHART

NO.

CHART NO. 2

INIS4IA

INI34IRA

150
3

1NI3<

A //

//

E
I

120

3RA
INI3'
INI34

JIIO

4A
4RA

?I00

MAXIMUM ALLOWABLE SURGE CURRENT

y
s~
/ //
//
ka ^

INI3<
INIS<

HbtS

tl30

INI34 3A
INI3<

140

MJlX]MU It REV ERSE CHADACTEIatmc 3

jur CTIOI< TEM PERA ruRE 25'C TO 2 ace

2A

WI3<IZRA

SA

9RA

(NON-RECURRENT)
INI

I46A

~IN 346R A

INI34 TA
INI34 7RA

mas

miw 8A
INI3<

ItRA

z 50
u.

400

300

ZOO

40

600

500

INSTANTANEOUS REVERSE VOLTAGE- VOLTS

1

CHART

NO. 3

DURATION (LESS TMAM

CYCLE) USE CURVE 3
1

4.0

6.0

10

CYCLES AT 60

CHART
200

<n

160

<
.'

120

MAXIMUM ALU)WABLE FORVUMD

SURGE CMRRE IT FUR SUB CYCLE
CYCLE) PULSEWIDTHS FOR CALCULATING I 2 t

(LESS THAN

T,

>

-65*C TO ZOO'C

PULSE TIME -MILLISECONDS

CHART

NO. 5
626

20

C.P.S.

NO. 4

OUTLINE DRAWING -A2011

A2011

p 809 005
-

RECOMMENDED MOUNTING POSITION

AS SHOWN.

it

1.500 .015

TERMINAL

COLOR CODING
RED s 4
BLACK = -

4.062 .0S0

2500.OI5

SINGLE PHASE HALF WAVE*

+ 6

A30II
Serin
Medal No.

Dimoiuieni

FHIADI
FHIA02

3.006
3.492

AHIADI
AHIAD2

Outline

AC

loput
Voltl

RMS

DC

Output

AMII

Outline

Serlee

OlMORflOM

AC

"L"

RMS

Ampe

Model No.

35
35

15
15

6.3
11.3

FCIADI
FCIAD2

3.006
3.492

70
70

31
31

6.3
11.3

ACIADI
ACIAD2

3.512

BHIADI
BHIAD2

3.006
3.492

140
140

62
62

6.3
11.3

CHIADI
CHIAD2

3.006
3.492

210
210

94
94

DHIAOI
DHIAD2

3.006
3.492

280
280

EHIADI
EHIAD2

3.006
3.492

MHIADI
MHIAD2

(In.)

= AC

SINGLE PHASE CENTER TAP*

Volte

"L"

YELLOW

(In.)

3.512

OC

Input?
Voltl

Voltl

Output

Ampi

17.5
17.5

14
14

22.6

4.961

35.0
35.0

30
30

22.6

BCIADI
BCIAD2

3.512
4.961

70.0
70.0

62
62

22.6

6.3
11.3

CCtADI
CCIAD2

3.512

105.0
105.0

93

12.6

4.961

93

22.6

125
125

6.3
11.3

DCIADI
DCIAD2

3.512
4.961

140.0
140.0

125
125

12.6
22.6

350
350

157
157

6.3
11.3

ECIADI
ECIAD2

3.512
4.961

175.0
175.0

156
156

12.6

22.6

3.006
3.492

420
420

188
188

6.3
11.3

MCIADI
MCIAD2

3.512
4.961

210.0
210.0

188
188

22.6

DH2ADI
DH2AD2

3.489
4.5IS

560
560

251
251

6.3
11.3

DC2ADI
DC2AD2

4.998
6.996

280.0
280.0

250
250

22.6

CH3ADI
CH3AD2

4.510
6.004

630
630

282
282

6.3
11.3

CC3ADI
CC3AD2

5.924
10.011

315.0
315.0

280
280

22.6

EH2ADI
EH2AD2

3.489
4.SIS

700
700

314
314

6.3
11.3

EC2ADI
EC2AD2

4.998
6.996

350.0
350.0

313
313

22.6

MH2ADI
MH2AD2

3.489
4.515

840
840

377
377

6.3
11.3

MC2ADI
MC2AD2

4.998
6.996

420.0
420.0

376
376

22.6

MH3ADI
MH3AD2

4.510
6.004

1260
1260

564
564

6.3
11.3

MC3ADI
MC3AD2

5.924
10.011

630.0
630.0

564
564

22.6

4.961

12.6

12.6

12.6

AC

12.6

12.6

12.6

AC

12.6

12.6

12.6

tLine to Cnter tap.

For negative output change second

For example: A2011BC2BD1

Maximum

Operating Ratings, Resistive

NOTE: Please designate

60 CPS Sinusoidal
55C Ambient. For Other Ambient

or Inductive Load,
at

Conditions, Use Chart No.

to last letter to

full

stack

"B".

number

by preceding Model No. desired with "A2011."

627

A2011

SINGLE PHASE BRIDGE*

BBIADI
BBIAD2

4.515
7.502

140
140

124
124

22. f

CBIADI
CBIAD2

4.515
7.502

210
210

187
187

22.

DBIADI
DB1AD2

4.515
7.502

280
280

250
250

22.C

EBIADI
EBIAD2

4.515
7.502

350
350

313
313

22.6

MBIADI
MBIAD2

4.515
7.502

420
420

376
376

22.6

2.1

I2.<

I2.(

12.6

I2.<

DB2ADI

7.027

560

502

12.6

CB3ADI

9.519

630

564

12.

EB2ADI

7.027

700

628

12.

MB2ADI

7.027

840

754

12.

MB3ADI

9.5IS

1260

1130

12.

SINGLE PHASE MAGNETIC

AMPLIFIER BRIDGE*
'
'
'

MMI

rtmtm

Otftlifte

DIlMnlltttl

"L"

(l*.

AC l*wt

IHVtlk

OCQat)At
Ani

'TVo'lW

'

FMIADI
FMIAD2

4.478
7.502

35
35

29
29

AMIADI
AMIAD2

4.478
7.502

70
70

61

12.6

61

22.6

BMIADI
BMIA02

4.478
7.502

140
140

124
124

22.6

CMIAOI
CMIAD2

4.478
7.502

210
210

187
187

22.6

DMIADI
DMIAD2

4.478
7.502

280
280

250
250

22.6

EMIADI
EMIAD2

4.478
7.502

350
350

313
313

22.6

MMIADI
MMIAD2

4.478
7.502

420
420

376
376

22.6
12.6

12.6

22.6

12.6

12.6

12.6

12.6

12.6

DM2ADI

6.990

560

502

DM3AOI

9.482

630

564

12.6

EM2ADI

6.990

700

628

12.6

MM2ADI

6.990

840

754

12.6

MM3ADI

9.482

1260

1130

12.6

tNeglecting gate winding drop.

628

TERMINAL

TERMINAL

COLOR CODE

COLOR CODE

YELLOW RED

YELLOW BLACK

THREE PHASE HALF WAVE*

Ai0

OutlllM

AC

8erfes

"L"

MMltl H*.

(IB.)

DC OWeut

lllRlltt

RM8

Vtlts

VtM*

Ames

FYIADI
FYIAD2

4.478
3.990

20
20

22
22

32.4

AYIADI
AYIAD2

4.478
5.990

40
40

45
45

32.4

BYTADI
BYIAD2

4.478
5.990

80
80

92
92

18.0
32.4

CYIADI
CYIAD2

4.478
5.990

120
120

139
139

32.4

DYIADI
DYIAD2

4.478
5.990

160
160

186
186

18.0
32.4

EYIADI
EYIAD2

4.478
5.990

200
200

232
232

18.0

32.4

MYIADI
MYIAD2

4.478
5.990

240
240

279
279

18.0
34.2

DY2ADI
DY2AD2

5.987
9.494

320
320

372
372

32.4

18.0

18.0

AC

18.0

AC

oH-

-o

AC

18.0

CY3ADI

7.976

360

418

18.0

EY2ADI
EY2AD2

5.987
9.494

400
400

465
465

32.4

MY2ADI
MY2AD2

5.987
9.494

480
480

558
558

32.4

MY3ADI

7.976

720

838

18.0

tUno

A2011

18.0

18.0

to Neutral.

For negative output change second

For example: A2011FS1BD1

to last

THREE PHASE BRIDGE*

ttfflW

A2llt
Sarin

tMit

flleiomlim

"L"

N>.

FFIADI
FFIAD2
AFIADI

(Is.)

5.987
9.480
5.987
9.480
5.987
9.480
5.987
9.480
5.987
9.480
5.987
9.480
5.987
9.480
9.485
9.485
9.485

AFIAD2
BFIADI
BFIAD2
CFIADI
CFIAD2
DFIADI
DFIAD2
EFIADI
EFIAD2
MFIADI

MFIAD2
DF2ADI
EF2ADI
MF2ADI

AC lMO*
RMI Voltl

DC

'

35
35
70
70

45
45
92
92

140
140

186
186
281
281

210
210
280
280
350
350
420
420
560
700
840

Outwit

""*H

AlRfB
18.0

32.4
18.0

32.4
18.0

32.4
18.0
32.4
18.0
32.4

375
375
470
470
564
564

18.0

32.4
18.0

32.4

751

AC

AC

AC

18.0
18.0
18.0

940
1130

tLine to Lino,

PHASE STAR*

SIX
1

,-

OUtttM

..#*
Series
N.

0i*NMlMt

MMI

MM

DCSotBtft
V"?Ula
Aawt

FSIADI
ASIADI
BSIADI
CSIADI
DSIADI
ESIADI
MSIADI

6.536
6.536
6.536
6.536
6.536
6.536
6.536

35.0
70.0
105.0
140.0
175.0
210.0

22
45
93
140
187
234
282

28.8
28.8
28.6
28.8
28.8
28.8
28.8

DS2ADI
ES2ADI
MS2ADI

9.514
9.514
9.514

280.0
350.0
420.0

375
469
563

28.8
28.8
28.8

17.5

tLine to Center Tap.

For negative output change second

For example: A2011BC2BD1

Maximum

to last letter to

"B".

Operating Ratings, Resistive

or Inductive Load, 60 CPS Sinusoidal

at 55C Ambient. For Other Ambient
Conditions, Use Chart No. 1

629

NOTE: Please designate

full

stack

by preceding Model No. desired with

number

"A20U.

A2011

ADDITIONAL. RATING

AMD SPECIFICATION

AMI IF

...

Maximum Allowable

Transient Peak Reverse Voltage*

(Nan-recurrent 5 millisec. max. duration)

Maximum Allowable Peok

(At

Reverse Voltage* (Repetitive)

Maximum Ambient

Maximum

Full

of

150C)

Fir*

100

200

350

450

600

700

800

50

100

200

300

400

500

600 volts

50

100

200

300

400

500

600 volts

2.5

2.0

volts

Load Voltage Drop*

(Single Phose, Full Cycle Average)

t

PES'

greater than .0008 seconds and

less

1.75

1.25

1.5

Storage Temperature Range

65Cto +175 e C
65Cto +175C

Maximum Operating Frequency

50,000-cps

Per Series Cell

NOTE:

ma

Minimum 25 Amperes2 Sec (65C to +2Q0CTj)

than .0083 seconds**

Ambient Temperature Range

1.0

Determine Series and Parallel Cells as Follows

peak reverse voltage (PRV) rating of each leg

should be approximately three times the operating peak voltage of
the circuit. This precaution is necessary because of the possibility of transient voltage
peaks in excess of the operating peak reverse voltage. The RMS voltage ratings for stacks
on the preceding pages are based on the assumption that special precautions have been
taken to minimize transient voltages.
in

In

practical circuits the transient

rectifier stack

@ 25C Amb., Sea Level

RMS

Mounting Brackets

2600

Mechanical Shock

Depends upon number of

Vibrotion

MU.-STD-202

Soft

Spray

V.

A 10G

Fins per stack

For

Max. 10-50 CPS

Mll-STD-202 A, Method 101A, 96 hours

Humtdfty

M&5TD-202

A, Method *BSA> 240^oor

APPROXIMATE STACK WEIGHT

Number

of Fins

Pounds

.40

2
3

.56
.66

4
6

.77
1.02
1.60

8
9
12

1.68
1.87

630

specific infor-

Silicon

A2511

Rectifier Stacks

Up to 600 peak reverse volts (PRV) per

Up to 9.4 amps DC output per leg free

cell

convection rating

TERMINAL
p.209.005

GE^ -f
RECOMMENDED MOUNTING POSITION
AS SHOWN.

1.1*

dp)

-f>

COLOR CODING
RED = +
BLACK = -

1.500 015

|875005

YELLOW = AC

U .400+ .015

~-700+015

JO

OUTLINE DRAWING -A2511

Features

Up to 99% in certain applications.

Forward voltage drops of than one per
Low Leakage Excellent for magnetic amplifier applications.
175C.
Operating and Storage Temperatures Will operate from 65C
Wide Range
required

high
no transformer taps
No Aging Extremely long
Rugged Construction Meets stringent military environmental
Small
Greatly reduces space and weight requirements.
connections.
Requires only mounting bolts and
Complete Packaged
design or insulating hardware.
No special
Dependability Backed by a General Electric one year written warranty.
164 stacked combinations with DC outputs up to 50 amperes to meet a variety of

High

Efficiency

Excellent Regulation

less

volt

cell.

to

of

reliability.

life

tests.

Size

electrical

Rectifier Circuit

fin

Versatility

circuit

conditions. Special circuits can be designed to your order.

631

A2511

4JA25HF

MAXIMUM REVERSE CHARACTERISTICS PER FIN

JUNCTION TEMPERATURE 25"C TO 200'C

4JA25IIA

4JA2SIIB

4JA25IIC-

A25II

4JA25IIE

/.
Itfss

4JA25IIM

200

400

300

500

600

INSTANTANEOUS REVERSE VOLTAGE-VOLTS

CHART NO. 3
260

o
uj

r240

!220

-200

MAXIMUM ALLOWABLE SURGE CURRENT

60

80

I00

AMBIENT TEMPERATURE

CHART NO.

180

I40

I20

(NON-RECURRENT)

160

i
O

120

100

80
FOR SUB-CYCLE ClIOftF
DURATION (LESS THAN

60

40
20

1.0

2.0

4.0

6.0

20

10

CYCLES AT 60

C.P.S.

NOTE:

WHEN

FINS ARE OPERATED IN PARALLEL

REDUCE SURGE RATING BY 10% PER FIN

CHART NO. 4
280

a.
Ok

2
7

ten

t-

MAXIMUM ALLOWABLE FORWARD

SURBE CURRENT PER FIN FOR SUBCYCLE

(LESS THAN

120

CYCLE) PULSE-

WIDTHS FOR CALCULATING

RATING
Tj= -65*C TO 20O"C

I2

CO

20

25
INSTANTANEOUS FORWARO VOLTAGE DROP-VOLTS

10

15

80

Q:

CHART NO. 2

PULSE TIME -MILLISECONDS

632

CHART

NO. 5

40

60

A2511

SINGLE PHASE HALF WAVE*

A2SII

Outline

Series

Dimensions

AC

"L"

RMS

Model No.

Resistive or Inductive Load,

55C
Ambient. For Other Ambient
60 CPS Sinusoidal

at

Conditions, Use Chart No.

Volts

Volts

Output

Amps

3.006

35

15

9.4

3.492

35

15

16.9

AHIADI
AHIAD2

3.006

70

31

9.4

3.492

70

31

16.9

CHIADI
CHIAD2

Operating Ratings,

DC

Input

FHIAOI
FHIAD2

BHIADI
BHIAD2

Maximum

(In.)

DHIADI
DHIAD2

3.006

140

62

9.4

3.492

140

62

16.9

3.006

210

94

9.4

3.492

210

94

16.9

3.006

280

125

9.4

3.492

280

125

16.9

EHIADI
EHIAD2

3.006

350

157

9.4

3.492

350

157

16.9

MHIADI

3.006

420

188

9.4

MHIAD2

3.492

420

188

16.9

DH2ADI
DH2AD2

3.4S9

560

251

9.4

4.515

560

251

16.9

CH3ADI
CH3AD2

4.510

630

282

9.4

6.004

630

262

16.9

EH2ADI
EH2AD2

3.489

700

314

9.4

4.515

700

314

16.9

MH2ADI
MH2AD2

3.489

840

377

9.4

4.515

840

377

16.9

4.510

1260

564

9.4

6.004

1260

564

16.9

MH3ADI
MH3AD2

+
o

SINGLE PHASE CENTER TAP'

A25II

Outline

Series

Dimensions

AC

"L"

RMS

Model No.

FCIADI
FCIAD2

ACIADI
ACIA02
BCIADI
BCIAD2
CCIADI
CCIAD2

DCIADI
DCIAD2

NOTE: Please designate

stack

full

number by preceding

Model No. desired with

"A25n."

ECIADI
ECIAD2

(In.)

DC

Inputt
Volts

Volts

Output

Amps

3.512

17.5

14

18.8

4.961

17.5

14

33.8

3.512

35.0

30

18.8

4.961

35.0

30

33.8

3.512

70.0

62

18.8

4.961

70.0

62

33.8

3.512

105.0

93

18.8

4.961

105.0

93

33.8

3.512

140.0

125

18.8

4.961

140.0

125

33.8

3.512

175.0

156

18.8

4.961

175.0

156

33.8

MCIADI
MCIAD2

3.512

210.0

188

18.8

4.961

210.0

188

33.8

DC2ADI
DC2AD2

4.998

260.0

250

18.8

6.996

280.0

250

33.8

CC3ADI
CC3AD2

5.484

315.0

280

18.8

10.011

315.0

280

33.8

EC2ADI
EC2AD2

4.998

350.0

313

18.8

6.996

350.0

313

33.8

MC2ADI
MC2AD2

4.998

420.0

376

18.8

6.996

420.0

376

33.6

MC3ADI
MC3AD2

5.484

630.0

584

18.8

10.011

630.0

564

33.8

tLine to Center tap.

For negative output change second to last letter
For example: A2511BC2BD1

633

to

"B"

AC

A2511

SINGLE PHASE BRIDGE

A25II

Outline

Series

Dimensions

AC

"L"

RMS

Model No.

(In.)

FBIADI
FBIAD2

4.5f5
7.502

ABIADI
ABIAD2

4.5I5
7.502

BBIADI
BBIAD2

4.5

7.502

CBIADI
CBIAD2

DBIADI
DBIAD2
EBIADI
EBIAD2

DC

Input
Volts

Output

Amps

Volts

29

18.8

35

29

33.8

70

61

18.8

70

61

33.8

140

124

18.8

140

124

33.8

4.515

210

187

18.8

7.502

210

187

33.8

4.515

280

250

18.8

7.502

280

250

33.8

35

4.515

350

313

18.8

7.502

350

313

33.8

MBIADI
MBIAD2

4.515

420

376

18.8

7.502

420

376

33.8

DB2ADI

7.027

560

502

18.8

CB3A0I

9.519

630

564

18.8

EB2ADI

7.027

700

628

18.8

MB2ADI

7.027

840

754

18.8

MB3ADI

9.519

1260

1130

18.8

SINGLE PHASE MAGNETIC

AMPLIFIER BRIDGE*
A25II

Outline

Series

Dimensions

AC

"L"

RMS

Model No.

(In.)

DC

Input
Volts

Output

t Volts

Amps

FMIADI
FMIAD2

4.478

35

29

18.8

7.502

35

29

33.8

AMIADI
AMIAD2

4.478

70

61

18.8

7.502

70

61

33.8

BMIADI

4.478

140

124

18.8

BMIAD2

7.502

140

124

33.8

CMIADI
CMIAD2

7.502

210

187

33.8

DMIADI
DMIAD2

4.478

280

250

18.8

7.502

280

250

33.8

EMIADI
EMIAD2

4.478

350

313

18.8

7.502

350

313

33.8

MMIADI
MMIAD2

4.478

420

376

18.8

7.502

420

376

33.8

TERMINAL

TERMINAL

COLOR CODE

COLOR CODE

YELLOW -RED

YELLOW BLACK

AC

*fe

AC

stack

number

18.8

DM2ADI

^t
^J

>!
"T

AC

18.8

DM3ADI

9.482

630

564

18.8

EM2ADI

6.990

700

628

18.8

MM2ADI

6.990

840

754

18.8

MM3ADI

9.482

1260

1130

18.8

tNeglecting gate winding droi

NOTE: Please designate

full

by preceding Model No. desired with "A2511."

634

THREE PHASE HALF WAVE*

A25II

Outline

Series

Dimensions

AC

"L"

RMS

Model No.

(In.)

DC

Inputt
Volts

Output

Volts

Amps

4.47S
5.990

20
20

22
22

26.4
47.5

AYIADI
AYIAD2

4.478
5.990

40
40

45
45

26.4
47.5

BYIADI
BYIA02

4.478
5.990

80
80

92
92

26.4
47.5

CYIADI
CYIA02

4.478
5.990

120
120

139
139

26.4
47.5

DYIADI
DYIAD2

4.478
5.990

160
160

186
186

26.4
47.5

EYIAOI
EYIAD2

4.478
5.990

200
200

232
232

26.4
47.5

MYIADI
MYIAD2

4.478
5.990

240
240

279
279

26.4
47.5

DY2ADI
DY2AD2

5.987
9.494

320
320

372
372

26.4
47.5

CY3AOI

7.976

360

418

26.4

EY2ADI
EY2AD2

5.987
9.494

400
400

465
465

26.4
47.5

MY2ADI
MY2AD2

5.987
9.494

480
480

558
558

26.4
47.5

MY3AOI

7.976

720

838

26.4

FYIADI
FYIAD2

tLine to Neutral.
For negative output change second to last letter to

A2511

AC
AC
-O

AC

"B"

For example: A2511FS1BD1

THREE PHASE BRIDGE 4

A25II

Outline

Series

Dimensions

AC

"L"

RMS

Model No.

FFIADI
FFIAD2
AFIADI

(In.)

EF2ADI

5.987
9.480
5.987
9.480
5.987
9.480
5.987
9.480
5.987
9.480
5.987
9.480
5.987
9.480
9.485
9.485

MF2AOI

9.485

AFIAD2
BFIADI
BFIAD2
CFIAOI
CFIAD2
DFIADI
DFIAD2
EFIAOI
EFIAD2

MFIADI
MFIAD2
DF2ADI

tLine to Line.
For negative output change second
For example: A2511BC2BD1

Output

Volts

35
35
70
70

45
45
92
92

140
140

186
186
281
281

210
210
280
280
350
350
420
420
560
700
843

375
375
470
425
564
564
751

940
1130

to last letter to

A25II

Outline

Series

Dimensions

AC

"L"

RMS

(In.)

Amps
26.4
47.5
26.4
47.5
26.4
47.5
26.4
47.5
26.4
47.5
26.4
47.5
26.4
47.5
26.4
26.4
26.4

EEC
TVT
AC

AC

AC

"B".

Inputt
Volts

DC Output
Amps

Volts

FSIADI
ASIADI
BSIADI
CSIADI
DSIADI
ESIADI
MSIADI

6.536
6.536
6.536
6.536
6.536
6.536
6.536

210.0

234
282

DS2ADI
ES2ADI
MS2ADI

9.514
9.514
9.514

280.0
350.0
420.0

375
469
563

tLine to Center tap.

For negative output change second to
For example: A2511BC2BD1

Volts

PHASE STAR 4

SIX
Model No.

DC

Inputt

17.5

35.0
70.0
105.0
140.0
175.0

last letter to

22
45
93
140
187

42
42
42
42
42
42
42
42

42
42

"B".

Maximum

Operating Ratings, Resistive or Inductive

Load, 60 CPS Sinusoidal at 55C Ambient. For
Other Ambient Conditions, Use Chart No. 1
635

NOTE: Please designate

full

stack

number

by preceding Model No. desired with "A2511.

A2511

AND SPECIFICATION PER

ADDITIONAL. RATING

A2511F

Maximum Allowable

Transient Peak Reverse Voltage*

(Non-recurrent 5

millisec.

Full

(9.4 A.

800

volts

100

200

350

450

600

700

50

100

200

300

400

500

600

volts

50

100

200

300

400

500

600

volts

max. duration)

Maximum Allowable Peak Reverse Voltage*

Maximum Allowable DC Blocking Voltage*
(At Maximum Ambient of 150C)
Maximum

...

FIN

(Repetitive)

Load Voltage Drop*

DC

Single Phase, Full Cycle Aver.,

Maximum Leakage

Current At

Full

55C Amb.)

.5 Volts

Load**

(Single Phase, Full Cycle Average)

3.0

2.00

2.5

lH Ratings (For Fusing) at Rated Forward Current and PRVfor

t greater than .0008 seconds and less than .0083 seconds Min. 60 Ampere'sec.

Ambient Temperature Range

Storage Temperature Range

(Tj

1.75

1.25

1.5

1.0

ma

= 65C to +200C)
65C to +175C
65C to + 175C

Maximum Operating Frequency

*

DC

50,000-cps

Determine Series and Parallel Cells as Follows

Per Series Cell

**Per Parallel Cell

Number

of Series Cells

A2511FH1AD1
"t.

NOTE:

Number of

Parallel Cells

peak reverse voltage (PRV) rating of each leg

should be approximately three times the operating peak voltage of
the circuit. This precaution is necessary because of the possibility of transient voltage
peaks in excess of the operating peak reverse voltage. The RMS voltage ratings for stacks
on the preceding pages are based on the assumption that special precautions have been
taken to minimize transient voltages.
in

In

practical circuits the transient

rectifier stack

Max. Hi-Pot Voltage to

Mounting Brackets

2600 V. RMS

Mechanical Shock

Depends upon number of

Vibration

MIL-STD-202
2 Hours

Salt

25C Amb., Sea

Level

per stack

For specific information, consult your General Electric District Sales Manager.

Spray

Fins

A 10G Max.
in

10-50 CPS
each plane.

MIL-STD-202 A, Method 101 A, 96 hours

Humidity

MIL-STD-202 A, Method 103A, 240 hours

APPROXIMATE STACK WEIGHT

Number

of Fins

Pounds

.40

.56
.66

4
6

.77
1.02

1.60
1.68
1.87

9
12

636

Silicon

A3512 SERIES

Rectifier Stacks

High Conversion Efficiency

Up

to

99%

in

certain

applications.

Forward

Excellent Regulation

than one volt per

voltage drops of less

cell.

Low Reverse Current

Excellent for magnetic ampli-

fier applications.

Wide Range

of Operating

and Storage Temperatures

Will operate from 65C to

No Aging

Extremely long

required high

no transformer taps

reliability.

Rugged Construction
vironmental

life

j~
gl

175C.

Meets

stringent military en-

tests.

Greatly reduces space and weight

Small Size
quirements.

re-

Complete Packaged Rectifier Circuit

Requires only
mounting bolts and electrical connections. No
special fin design or insulating hardware.

Dependability
Backed by a General Electric one
year written warranty.

171

stacked combinations with DC outup to 108 amperes to meet a variety of

circuit conditions. Special circuits can be designed
to your order.

Versatility

puts

I
637

A3512 SERIES

SINGLE FIN

k%

*.

^NkI
<$*

T^

MAXIMUM ALLOWABLE NON-RECURRENT

SURGE CURRENT AT RATED LOAD
CONDITIONS.

FOR SUB-CYCLE SURGE DURATION

{LESS THAN CYCLE) USE I 2
RATING (CHART NO. 5 )
I

-FORI

RAT NGS/XT MAXIMUM VOL TAGE

WHEN FINS ARE OPERATED

\\

SO
80
120
140
I00
AMBIENT TEMPERATURE IN*C

CHART NO.

CYCLES AT 60 CPS

NOTE

RES STIVE OR INDUCTIVE J

LO AD AT SEA LE VEL

PARALLEL, REDUCE SURGE

RATING BY 10% PER FIN

IN

CHART NO. 4
500

250 AMP2 SEC.

to

400

(9

ZOO

MAX MUM

IV

CURRE NT PE R
(NO N

LL ovt A 3LE

SIJRG E
F N N RMS A MPERE!
RE:ciJR RENT)

6 8

10

20

30 40 60 80

100

4006008001000

ZOO

PULSE TIME -MILLISECONDS

CHART
3

10

15

2.0

2.5

NO. 5

3.0

INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS

CHART

NO. 2

MAXIMUM LEAKAGE CURRENT ER FIN

JUNCTIOf * TEMPERA TURE 25C .TO 200*C

\s*

MAXIMUM TRANSIENT THE RMAL RESISTANCE

FREE

SEE PUBLICATION ECG469 ENTITL0"POWER

INTER MITTENT LC ADS?

SOOFT/MtN.

i^

IOOOFT/MIN.

4JA35I2F

4JA35I2A

4JA3SI2B
4JA35I2C

^4JA35li

^4JA3 5I2E
>*

4JA35I2M
NOTE:

200

300
400
SOO
600
INSTANTANEOUS INVERSE VOLTAGE- VOLTS

CHART

700

800

NO. 3

TIME(t) SECONDS

CURVE DEFINES TEMPERATURE RISE OF JUNCTION ABOVE AMBIENT

FOR SINGLE LOAD PULSE OF DURATION t. PEAK ALLOWABLE
DISSIPATION IN RECTIFIER FOR TIME t IF STARTING FROM AMBIENT
TEMPERATURE EQUALS 200'C (MAX. Tj) MINUS MAXIMUM AMBIENT
TEMPERATURE OIVIOED BY THE TRANSIENT THERMAL RESISTANCE:
ZQO'C-TawbIENT
P PEAK

CHART NO. 6
638

A351 2 SERIES
RECOMMENDED MOUNTING

.265

POSITION AS SHOWN.

3.000*. OI5

! .6001.01!

.265

.007^\

2.906
7501.015

.281* .010

5.0001.020
6.6521 .070

K-I.OOOt .015
L" + .100

WAVE

SINGLE PHASE HALF

4JA35I2

Outline

Series

Dimensions

Model No.

+ 6

"L"

(In.)

AC

Input

RMS

Volts

DC
Volts

Output

Amps*

15

20
36

15

54

70
70
70

30
30
30

4.012
5.000
6.000

140
140
140

62
62
62

CHIADI
CHIAD2
CHIAD3

4.012
5.000
6.000

210
210
210

DHIADI
DHIAD2

DHIAD3

4.012
5.000
6.000

EHIADI
EHIAD2
EHIAD3

FHIADI
FHIAD2
FHIAD3

4.012
5.000
6.000

35
35
35

15

AHIADI
AHIAD2
AHIAD3

4.012
5.000
6.000

BHIADI
BHIAD2
BHIAD3

SINGLE PHASE CENTER TAP

4JA35I2

Outline

Series

Dimension

AC

"L"

RMS

Model No.

(In.)

DC Output

Inputt
Volts

Volts

Amps*

FCIADI
FCIAD2
FCIAD3

5.000
6.500
8.000

17.5
17.5
17.5

14
14

40
72
108

20
36
54

ACIADI
ACIAD2
ACIAD3

5.000
6.500
8.000

35.0
35.0
35.0

30
30
30

108

20

BCIADI
BCIAD2
BCIAD3

5.000
6.500
8.000

70.0
70.0
70.0

61

40

36
54

61
61

72
108

93
93
93

20
36
54

CCIADI
CCIAD2
CCIAD3

5.000
6.500
8.000

105.0
105.0
105.0

93
93
93

40
72
108

280
280
280

125
125
125

20
36
54

DCIADI
DCIAD2
DCIAD3

5.000
6.500
8.000

140.0
140.0
140.0

124
124
124

40
72

4.012
5.000
6.000

350
350
350

156
156
156

20
36
54

ECIADI
ECIAD2
ECIAD3

5.000
6.500
8.000

175.0
175.0
175.0

156
156

156

72
108

MHIADI
MHIAD2
MHIAD3

4.012
5.000
6.000

420
420
420

187
187
187

20
36
54

MCIADI
MCIAD2
MCIAD3

5.000
6.500
8.000

210.0
210.0
210.0

187
187
187

108

DH2ADI
DH2AD2
DH2AD3

4.512
6.000
8.012

560
560
560

250
250
250

20
36
54

DC2ADI
DC2AD2
DC2AD3

6.500
9.500
13.000

280.0
280.0
280.0

249
249
249

72
108

CH3ADI
CH3AD2
CH3AD3

5.500
7.500
10.500

630
630

281
281
281

20
36
54

CC3ADI
CC3AD2

7.500
13.000

315.0
315.0

280
280

40
72

630

EH2ADI
EH2AD2
EH2AD3

4.512
6.000
8.012

700
700
700

313
313
313

20
36
54

EC2ADI
EC2AD2
EC2AD3

13.000

350.0
350.0
350.0

312
312
312

108

MH2ADI
MH2AD2
MH2AD3

4.512
6.000
8.012

840
840
840

376
376
376

20
36
54

MC2ADI
MC2AD2
MC2AD3

6.500
9.500
13.000

420.0
420.0
420.0

375
375
375

72
108

MH3ADI
MH3AD2
MH3AD3

5.500
7.500
10.500

1260
1260
1260

564
564
564

20
36
54

MC3ADI
MC3AD2

7.500
13.000

630.0
630.0

562
562

40
72

6.500
9.500

t Line to Center Tap

For negative output change second
For example; 4.TA3312BC1BD1

*Maximum Operating

Ratings, Resistive
or Inductive Load, 60 cps Sinusoidal
at 55C Ambient. For Other Ambient
Conditions, Use Chart No. 1

NOTE: Please designate

to

full

14

40
72

108

40

40
72

40

40
72

40

last letter

stock

number

by preceding Model No. desired with "4JA3512.'

639

AC

SINGLE PHASE BRIDGE

A351 2 SERIES

4JA35I2

Outline

Series

Dimensions

Model No.

"L"

(In.)

AC

DC Output

Input

RMS

Amps*

Volts

Volts

FBIADI
FBIAD2
FBIAD3

6.000
9.524
13.000

35
35
35

29
29
29

72
08

ABIADI
ABIAD2
ABIAD3

6.000
9.524
13.000

70
70

60
60
60

40
72
08

BBIADI
BBIAD2
BBIAD3

CBIADI
CBIAD2
CBIAD3

13.000

2I0
2I0
2I0

6.000
9.524
3.000

280
280
280

249
249
249

EBIADI
EBIAD2
EBIAD3

6.000
9.524
13.000

350
350
350

3I2
3I2
3I2

I08

MBIADI
MBIAD2
MBIAD3

6.000
9.524
13.000

420
420
420

375
375
375

DBIADI
DBIAD2
DBIAD3

70

6.000
9.524
3.000

6.000
9.524

40
40
40

40

I23
1

23
23

86
86
86

40
72
08
40
72
08

40
72
08

40
72

40
1

72
08

DB2ADI

9.5I2

560

499

CB3ADI

12.500

630

558

40

EB2ADI

9.5I2

700

625

40

MB2ADI
MB3ADI

840

9.5I2
1

2.500

260

40

75!

40

22

40

SINGLE PHASE MAGNETIC

AMPLIFIER BRIDGE
4JA35I2

Outline

Series

Dimensions

Model No.

"L"

(In.)

AC

Input

RMS

Volts

DC

Output

Voltst

Amps*

FMIADI
FMIAD2
FMIAD3

6.000
9.524
13.000

35
35
35

29
29
29

108

AMIADI
AMIAD2
AMIAD3

6.000
9.524
13.000

70
70
70

60
60
60

108

6.000
9.524
3.000

140
140
140

123
123
123

72
108

6.000
9.524
13.000

210
210
210

186
186
186

72
108

6.000
9.524
3.000

280

280
280

249
249
249

108

6.000
9.524
3.000

350
350
350

312
312
312

72
108

6.000
9.524
3.000

420
420
420

375
375
375

108

40

BMIADI
BMIAD2
BMIAD3
CMIADI
CMIAD2
CMIAD3

DMIADI
DMIAD2
DMIAD3
EMIADI
EMIAD2
EMIAD3

MMIADI
MMIAD2
MMIAD3

40
72

40
72

40

40

40
72

40

40
72

DM2ADI

9.5I2

560

499

CM3ADI

12.500

630

558

40

EM2ADI

9.512

700

625

40

MM2ADI

9.512

840

751

40

MM3ADI

12.500

1260

1122

40

Neglecting

gate winding drop.

NOTE: Please designate

full

stack

''Maximum Operating Ratings, Resistive

or Inductive Load, 60 cps Sinusoidal
at 55C Ambient. For Other Ambient

number

by preceding Model No. desired with "4JA3512."

640

Conditions, Use Chart No.

THREE PHASE HALF WAVE

4JA35I2

Outline

Series

Dimensions

AC

"L"

RMS

Model No.

(In.)

DC Output

Inputt
Volts

Amps"

Volts

FYIADI
FYIAD2

6.012
8.000

20
20

22
22

100

AYIAOI
AYIAD2

6.012
8.000

40
40

45
45

55
100

BYIADI
BYIAD2

6.012
8.000

80
80

92
92

100

CYIADI
CYIAD2

6.012
8.000

120
120

139
139

100

DYIADI
DYIAD2

6.012
8.000

160
160

185
185

100

EYIADl
EYIAD2

6.012
8.000

200
200

232
232

55
100

MYIADI

240
240

279
279

55

MYIAD2

6.012
8.000

DY2ADI
DY2AD2

8.000
12.512

320
320

371

55

371

100

CY3ADI

10.500

360

417

55

EY2ADI
EY2AD2

8.000
12.512

400
400

465
465

55
100

MY2ADI
MY2AD2

8.000
12.512

480
480

558
558

55
100

MY3ADI

10.500

720

838

55

Line

to

A3512 SERIES

55

55

AC

55

55

AC
-o

100

AC

Neutral.

For negative output change second

For example: 4JA3512FS1BD1

to last

"II"

letter to

THREE PHASE BRIDGE

4JA35I2

Outline

Series

Dimensions

AC

"L"

RMS

Model No.

FFIADI
FFIAD2
AFIADI

(In.)

8.000
12.500
8.000
12.500
8.000
12.500
8.000
12.500
8.000
12.500
8.000
12.500
8.000
12.500
12.500
12.500
12.500

AFIAD2
BFIADI
BFIAD2
CFIADI
CFIAD2
DFIADI
DFIAD2
EFIADI
EFIAD2

MFIADI
MFIAD2
DF2ADI
EF2ADI
MF2ADI

Inputt
Volts

35
35
70
70

44
44

140
140

186
186

210
210
280
280
350
350
420
420
560
700
840

280
280
375
375
469
469
563
563
750
939

Series

Dimensions

AC

"L"

RMS

(In.)

FSIADI
ASIAOI
BSIADI
CSIADI
DSIADI
ESIADI
MSIADI

8.000
8.000
8.000
8.000
8.000
8.000
8.000

DS2AOI
ES2AOI
MS2ADI

12.512
12.512
12.512

tLine

to

55

91

100

55
100
55
100
55
100
55
100
55
100

55
55
55

AC

AC

AC

STAR

Inputf
Volts

17.5

DC

Output

Volts

Amps*

22
45
92

90
90
90
90
90
90
90

35.0
70.0
105.0

140

140.0
175.0

234

210.0

281

280.0
350.0
420.0

468

187

o+

90
90
90

374
562

Center Tap.

For negative outiiul change second

example: 4.TA3512BC^BIH

55
100

91

1127

SIX PHASE
Model No.

DC Output
Amps*

Volts

to

last

letter

to

"B"

Maximum

Operating Ratings, Resistive

or Inductive Load, 60 eps Sinusoidal
at 55C Ambient. For Other Ambient
Conditions, Use Chart No. 1
641

NOTE: Please designate

full

stack

number

by preceding Model No. desired with "4JA3512.'

A3512 SERIES

ADDITIONAL RATINGS AND SPECIFICATIONS PER FIN

4JA3512
Transient Peak Reverse Voltage
(non-recurrent 5 millisec. max. duration)

TOO

200

350

450

600

700

800

volts

50

100

200

300

400

500

600

volts

50

100

200

300

400

500

600

volts

*Maximum Allowable

Maximum

Allowable Peak Reverse Voltage (Repetitive

*Maximum Allowable DC Blocking Voltage

(At Maximum Ambient of 150C)
*Maximum

DC

Full

Load Voltage Drop (20A

Full Cycle Ave., 55 C Ambient)

Single Phase,

**Maximum

Reverse Current at

Full

<<

for

>

DC

Load

(Single Phase, Full Cycle Average)

**l 2 t Ratings (For Fusing) at Rated

.6 Volts

4.5

4.0

3.5

65C to +175C
65C to + 175C

Storage Temperature Range

Maximum Operating Frequency

50,000 cps
Determine Series and Parallel Cells as Follows:

*Per Series Cell

**Per Parallel Cell

Number

of Series Cells

4JA3512FH1AD1
N um ber of Parallel Cells

Reverse Voltage Rating

per Cell

'

j
|

The RMS voltage ratings for stacks on the preceding pages are based on the
assumption that the required precautions have been taken to keep transient voltage per
fin within the ratings specified above. For a discussion of voltage transients and corrective
action, request "Rectifier Voltage Transients: Their Generation, Detection, and Reduction,"

NOTE:

ECG-544.

Maximum
Salt

ma

250 Ampere 2 Sec.

than .0083 sec

less

Ambient Temperature Range

Peak

2.0

Forward Current and PRV

greater than .0008 seconds and

Letter Designating

2.5

Hi-Pot Voltage to Mounting Brackets

....

Spray

2600

V.

RMS

@ 25 C Ambient, Sea Level

MIL-STD-202 A, Method 101 A, 96 hours

Humidi, y

MIL-STD-202 A, Method 103A, 240 hours

APPROXIMATE STACK WEIGHT

Number of Fins

Pounds

2.0

2
3

2.75
3.25

4
6
8
9
12

3.5
4.0
4.5
4.75
5.5

642

A70, A190

Silicon

Rectifier

Stacks

FIN 12

FIN 13

FIN 14/15

643

A70,
1.

A 190
RECTIFIER STACK SELECTION CHART

for

40C ambient,

free convection cooling, resistive or inductive load (for other conditions

SINGLE PHASE HALF

WAVE

48

ADC

65

ADC

A7011AH1AD1
BH1AD1
CH1AD1
DH1AD1
EH1AD1
MH1AD1
NH1AD1
PH1AD1

'AH1AD1
BH1AD1
CH1AD1
DH1AD1
EH1AD1

MH1AD1
NH1AD1
PH1AD1

ADC

70

85

ADC

ADC

90

175

ADC

Max.

Max.
Ci' cu 't
,

MH1AD1
NH1AD1
PH1AD1

Output

Input

Volts

A7014AH1AD1 A19013AH1AD1 A19015AH1AO1

BH1AD1
BH1AD1
BH1AD1
CH1A01
CH1AD1
CH1A01
DH1AD1
DH1AD1
DH1AD1
EH1AD1
EH1AD1
EH1AD1
MH1AD1
MH1A01
MH1AD1
NH1AD1
NH1AD1
NH1AD1
PH1AD1
PH1AD1
PH1AD1

A7013AH1AD1
BH1AD1
CH1AD1
0H1A01
EH1A01

see Figures 2 thru 7).

Repetitive

AC
CIRCUIT OUTPUT CURRENT

RMS*

DC

Volts

29

70
140

61

92

210
280
350
420
560
700

124
155
187

250
313

Max.
Diode

ppv

Max. Allow.
Transient

PRV

Non-

Recurrent

100
200
300
400
500
600
800
1000

200
300
400
525
650
800
1050
1300

100

200
3UU
400

SINGLE PHASE CENTER TAP

CIRCUIT OUTPUT CURRENT

ADC

96

130

BC1AD1
CC1AD1
DC1AD1
EC1AD1
MC1AD1
NC1A01
PC1AD1

ADC

140

ADC

170

BC1AD1
CC1AD1
DC1AD1
EC1A01

BC1AD1
CC1AD1
DC1AD1
EC1AD1

MC1AD1
NC1AD1

MC1AD1
NC1AD1

PC1AD1

PC1AD1

ADC

180

ADC

350

(Line to
Neutral)

ADC

SAC1AD1 A19015AC1AD1
BC1AD1
BC1AD1
CC1AD1
CC1AD1
DC1AD1
DC1AD1
EC1AD1
EC1AD1

BC1AD1
CC1AD1
DC1AD1
EC1AD1
MC1AD1
NC1AD1
PC1AD1

MC1AD1
NC1AD1

MC1AD1
NC1AD1

PC1AD1

PC1AD1

28
60

35
70
105
140
175
210

200
300
400
500
600
800
1000

91

123
154
186
249
312

280
350

525
650
800
1050
1300

SINGLE PHASE BRIDGE

CIRCUIT OUTPUT CURRENT

ADC

96

130

A7012AB1AD1
BB1AD1
CB1AD1
B1AD1
EB1AD1
MB1AD1
NB1A01
PB1AD1

ADC

140

A7011AB1AD1
BB1AD1
CB1AD1
DB1AD1
EB1AD1
MB1AD1
NB1AD1
PB1AD1

ADC

170

A7013AB1AD1
BB1AD1
CB1A01
DB1AD1
EB1AD1
MB1AD1
NB1AD1
PB1A01

ADC

180

ADC

350

(Line to
Neutral)

ADC

A7014AB1AD1 A19013AB1AD1 A19015AB1AD1

AB1AD1
BB1AD1
BB1AD1
BB1AD1
CB1AD1
CB1AD1
CB1AD1
DB1AD1
DB1AD1
DB1AD1
EB1AD1
EB1AD1
EB1AD1
MB1AD1
MB1AD1
MB1AD1
NB1AD1
NB1AD1
NB1AD1
PB1AD1
PB1AD1
PB1AD1

70

59

100

140
210

121

200
300
400
500
600
800
1000

185
248

280
350
420
560
700

311

374
500
626

200
300
400
525
650
800
1050
1300

THREE PHASE HALF WAVE

CIRCUIT OUTPUT CURRENT

135

ADC

180

BY1AD1
CY1AD1
DY1AD1
EY1AD1
MY1AD1
NY1AD1
PY1AD1

AC

o H-

ADC

195

BY1AD1
CY1AD1
DY1AD1
EY1AD1

MY1AD1
NY1AD1
PY1AD1

ADC

240

ADC

270

ADC

500

(Line to
Neutral)

ADC

1AY1AD1 A19013AY1AD1 A19015AY1AD1

BY1AD1
BY1AD1
BY1AD1
CY1AD1
CY1AD1
CY1AD1

BY1AD1
CY1AD1
DY1AD1
EY1AD1
MY1AD1
NY1AD1
PY1AD1

40
80
120
160

DY1AD1
EY1AD1

Y1AD1
EY1AD1

DY1AD1
EY1AD1

MY1AD1
NY1AD1

MY1AD1
NY1AD1

MY1AD1
NY1AD1

200
240
320

PY1AD1

PY1AD1

PY1AD1

400

44

100

91

200
300
400
500
600
800
1000

138
184
231
278
371

465

200
300
400
525
650
800
1050
1300

THREE PHASE BRIDGE

CIRCUIT OUTPUT CURRENT

135

w
AC

AC

ADC

180

A7012AF1AD1
BF1AD1
CF1AD1
DF1AD1
EF1AD1
MF1AD1
NF1AD1
PF1AD1

AC

ADC

195

A7011AF1AD1
BF1AD1
CF1AD1
DF1AD1
EF1AD1
MF1AD1
NF1AD1
PF1AD1

ADC

A7013AF1AD1
BF1AD1
CF1AD1
DF1AD1
EF1AD1
MF1AD1
NF1AD1
PF1AD1

240

ADC

270

ADC

ADC

500

A7014AF1AD1 A19013AF1AD1 A19015AF1AD1

BF1AD1
BF1AD1
BF1AD1
CF1AD1
CF1AD1
CF1AD1
DF1AD1
DF1AD1
DF1AD1
EF1AD1
EF1AD1
EF1AD1
MF1AD1
MF1AD1
MF1AD1
NF1AD1
NF1AD1
NF1AD1
PF1AD1
PF1AD1
PF1AD1

70

91

100

140
210
280
350
420
560
700

185
279
374

200
300
400
500
600
800
1000

200
300
400
525
650
800
1050
1300

100
200
300
400
500
600
800
1000

200
300
400
525
650
800
1050
1300

468
563
752
941

SIX PHASE STAR

CIRCUIT OUTPUT CURRENT

240

ADC

294

2AS1AD1
BS1AD1
CS1AD1
DS1AD1
ES1AD1
MS1AD1
NS1AD1
PS1AD1

ADC

318

A7011AS1AD1
BS1AD1
CS1AD1
DS1AD1
ES1AD1
MS1AD1
NS1AD1
PS1AD1

ADC

A7013AS1AD1
BS1AD1
CS1AD1
DS1AD1
ES1AD1
MS1AD1
NS1AD1
PS1AD1

390

ADC

420

ADC

840

ADC

A7014AS1AD1 A19013AS1AD1 A19015AS1AD1

BS1A01
BS1AD1
BS1AD1
CS1AD1
CS1AD1
CS1AD1
DS1AD1
DS1AD1
0S1A01
ES1AD1
ES1AD1
ES1AD1
MS1AD1
MS1AD1
MS1AD1
NS1AD1
NS1AD1
NS1AD1
PS1AD1
PS1AD1
PS1AD1

35
70
105
140
175

210
280
350

44
91

139

186
233
280
375
469

RMS voltage ratings are based on the assumption that the required precautions have been taken to keep transient voltage per fin within the transient ratings specified above.
For a discussion of voltage transient and corrective action, request "Rectifier Voltage Transients: Their Generation, Detection and Reduction," 200.11.

"The

NOMENCLATURE IDENTIFICATION
Basic rectifier diode used in stack. For further diode

A70

12

AD

details, refer to

A70, A190

Identifies heat sink as follows:

11

12
13
14
15

1-1/2 x 3-1/2 x 3-1/2 aluminum extrusion

5x5x1/8 copper plate
7 x 7 x 3/8 aluminum plate
4x4x5 aluminum extrusion
5 x 5 x 5-1/2 aluminum extrusion

644

3.

Diode voltage classification

headed "Max Diode PRV."

4.

Basic circuit.

specifications.

5.

Number

6.

Mechanical construction,

7.

Number

see Figure 1,

of series diodes in each leg.

of parallel diodes

in

each

leg.

column

A70, A190
-200

o
111

40

30

50
60
70
80
AMBIENT TEMPERATURE-C*

90

ioo

'20

A7011 STACK CURRENT RATING AS A

FUNCTION OF AMBIENT TEMPERATURE
AND COOLING CONDITIONS
o
,

3.

I50

30

40

50
60
70
80
AMBIENT TEMPERATURE-C*

90

100

A7012 STACK CURRENT RATING AS A

FUNCTION OF AMBIENT TEMPERATURE
AND COOLING CONDITIONS

120

I40

2,000 FT/MIN

i
i

'

I30

^^-6* S-LIMIT

I20
I.OOC

no

T/MIN

IOO

90

FT/MIN

FRE E CONVIiCTION

80
70

40

30

20

50
70
60
80
AMBIENT TEMPERATURE-C'

90

40

100

A7813 STACK CURRENT RATING AS A

FUNCTION OF AMBIENT TEMPERATURE
AND COOLING CONDITIONS

4.

50
60
70
80
AMBIENT TEMPERATURE-C"

ioo

A7014 STACK CURRENT RATING AS A

FUNCTION OF AMBIENT TEMPERATURE
AND COOLING CONDITIONS

<s

-l

no

3-e-l IMIT

Ui

OT220

1,000

__6_e-. JMpE^

120

6 e-LIMI r

|200
'

I80

z
u
IE

I60

I-

120

Z ' D00 FT/ MIN

T/MIN

l-\

no
300

T/MIN

100
1

000 FT /MIN^

90

70

FRES" CONV iCTION

2 60
u
o 20
a.

)N^

80

100

o 8
Ul

FR EE CO <VECTI

30 3 FT/MI g ^"^>

60

'

'

n
10

A19013 STACK CURRENT RATING AS A

FUNCTION OF AMBIENT TEMPERATURE
AND COOLING CONDITIONS

110

20

7.

545

30

40

50
60
70
80 .
AMBIENT TEMPERATURE - C

90

100

A19015 STACK CURRENT RATING AS A

FUNCTION OF AMBIENT TEMPERATURE
AND COOLING CONDITIONS

no

6
4

3.6

3.3

"y>\1

3.0

\</'

S27
\

300FT/MIN

A/

2.4

UJ

It

S'.

03

IflOOFT/KM

UJ

-1.5

<
s

II

\&Z8

o
,

,FREE
CONVECTION

\\y
12

y ry

uj

kO.9
0.6
0.3

-"

' J

>

::>'

OVERLOAD TIME

STEADY

1.000

100

10

I.'O

SECONDS

Sit

STATE

A7011 TRANSIENT THERMAL RESISTANCE AT 60 CPS, JUNCTION-TO-AMBIENT

8.

VS.

1
I

I'V

OM
t

10

1.0

100

1,000

tOVERLOAD TIME -SECONDS

STEADY
STATE

60*"\j

2 <"\_0'VIO'"\-<

THERMAL RESISTANCE
JUNCTION-TO-AMBIENT
OVERLOAD TIME

A7012 TRANSIENT

AT

60 CPS,

OVERLOAD TIME

VS.

2.4

6( _

l1

2.2

rut

yc< >NVEC TION

2.0

DC

I.8

Vi 50 FT/

|(

DC

1.

'

64

1.

00 FT 'MN

~ JK

I.2

i!^ r

I.O

<
z

'"

''
0.8

0.6
.

0.4

,.*
-'

0.2

"H>v'v^\o>v
01

BO->-

0.1

STEADY
STATE

1000

100

10

1.0

OVERLOAD TIME-SECONOS
10.

i,ooo

STEADY
STATE

A7014 TRANSIENT THERMAL RESISTANCE

AT 60 CPS, JUNCTION-TO-AMBIENT
VS. OVERLOAD TIME

11.

2.0

f.y_

loo

OVERLOAD TIME -SECONDS

A7013 TRANSIENT THERMAL RESISTANCE

AT 60 CPS, JUNCTION-TO-AMBIENT
VS. OVERLOAD TIME
\i

io

i!b

o.i

1*IIfnee
I Jcon^1~'VECiTK>M

J3I.4

UJ

o
<

-J /s

cj I.2

If FT/

tkT*

>

to

D(

t'

2> I.0
)

**

UJ

6 i.

tr.

<

gO.6

,*

FT/
MIN.

~b

**

ooo

_i

UJ

(-

(-

0.4

^'V

0.2

"OOi

::?
.01 t

l'\,

Yo.l t

2'V^'V 10^,

*
10

100

WOO

SO'v,

OVERLOAD TIME- SECONDS

12.

A19013 TRANSIENT

AT

STEADY
STATE

THERMAL RESISTANCE -

OVERLOAD TIME

.01 1

(Ol

^*

OVERLOAD TIME -SECONDS

13.

60 CPS, JUNCTION-TO-AMBIENT
VS.

00i

646

CPS,
VS.

STEADY
STATE

THERMAL RESISTANCE
JUNCTION-TO-AMBIENT
OVERLOAD TIME

A19015 TRANSIENT

AT 60

1,000

A70, A190
350

1000

30/

6*7

30/

900

300

/*

Tj-+l50C TO +200C

800

700

Six.

600

200

500
150

400

1
300

100

200
50
100

40
14.

60
80
I00
20
I40
FORWARD CURRENT- AMPERES

I80

"0

200

A7011, A7012, A7013, A7014

100
200
300
400
500
AVERAGE CURRENT- AMPERES /DIODE

600

700

A19013, A19015

15.

AVERAGE FORWARD POWER DISSIPATION

VS. AVERAGE FORWARD CURRENT -

AVERAGE FORWARD POWER VS. AVERAGE

FORWARD CURRENT - Tj = +150C to +200C

Tj = +150Cto +200 C
Ul
<e

UJ

1800

Q.

1600

f 5000
z
UJ
a.

1400

o
a.

1200

%
a
e

1000

4,000

3,000

UJ

800

1
600

2,000

UJ

<rt

400

j
<
X

200

1,000

<
n
6

10

20

40

16.

20

10

40

60

80 100

CYCLES AT 60 CPS

CYCLES AT 60CPS

A7011, A7012, A7013, A7014

A19013, A19015

17.

MAXIMUM SURGE CURRENT AT RATED

LOAD CONDITIONS (PRV APPLIED AFTER

MAXIMUM SURGE CURRENT AT RATED

LOAD CONDITIONS (PRV APPLIED AFTER
SURGE (NON-RECURRENT)

SURGE) (NON-RECURRENT)

5000
2000

1000

000

100

fr

J"

IO0

Tj200* c

/ / ^^Tj

25 C

10

1.0

I
0.1
I.0

I.5

INSTANTANEOUS
1 8.

2.0

2.5

.5

3.0

INSTANTANEOUS FORWARD VOLTAGE - VOLTS

FORWARD VOLTAGE- VOLTS

A701 1 A701 2, A701 3, A701

19.

A19013, A19015

MAXIMUM FORWARD CHARACTERISTICS

MAXIMUM FORWARD CHARACTERISTICS

647

A
Wave
Tap

APPROX.

OUTLINE

WEIGHT

NO.

2.937

1.5 Lbs.

Single Phase Center

4.875

3.0

Single Phase Bridge

4.875

5.5

6.812
6.812
12.625

8.0

4.0

8.0

Single Phase Half

30
30
60

Half

Wave

Bridge

Star

OUTLINE DRAWINGS

A7011

390 OlA. MOLE

(TERMINAL CONN.)

fc.OlO

^^
2.38 5

266

DIA.

MOUTING-

A7012

Single Phase Half

ALTERNATE
LOCATION OF
TERMINALS

Wave
Tap

Single Phase Center

Single Phase Bridge

30
30
60

Half

Wave

Bridge
Star

11.750

A7013
A19013

/
TYPICAL VIEW OF

Single Phase Half

Single Phase Center

WEIGHT

6.076+- 060

Wave

6.776+

Tap

060

Single Phase Bridge

10.500+-

10S

3 Phase Half Wave

10.500

10S

3 Phase Bridge

4.496

ls0

60

14.496

Star

Sp:

APPROX.

150

TOP AND 80TT0M

BUS BARS
I

I?

1.093

14

12

2.SOO

c
^-.ai

19

fir
"

U.S6E
962

l'

19

648

-+-

ft:.

3C

Lbs.

- .615

U S.000

A7014

M.

M.

A
MOO 1 03*

APPROX. OUTLINE

WEIGHT

NO.

Wave
Phase Center Tap

Single Phase Half

Single

Single Phase Bridge

30
30
60

A.

Half

Wave

Bridge
Star

3.750
8.250

4.437
8.937

8.250
8.937
12.750 1 3.437
12.750 13.437
12.750 13.437

3 Lbs.

10
8

15

2
2

15

MOUNTING HOLES

A19015

fc

.406
OIA.

tL

.656 :.020

P^

t.OI5

*.oio

.OI0

7.625

6.S00

-28IDIA. MOUNTING HOLES

s3
Wave
Phase Center Tap

Single Phase Half

Single

Single Phase Bridge

261

DISMOUNTING HOLES

649

30
30

Bridge

Star

Half

Wave

APPROX. OUTLINE

5.500
11.812
11.812
18.125
18.125
18.125

6.250
1 2.562
12.562

17

18.875
18.875
18.875

14
22
22

WEIGHT
4
8

Lbs.

NO.
1
1

A70, A190
500

III

III

mi

III

FOR DIODE MOUNTED ON

7X7X3/8 ALUMINUM FIN (GE
OR 7X7X1/4 COPPER FIN
1

u
300

60

30

10

Mil

nun

OUTPUT CURRENT

13)

RIDGE BRDGE BRIDGE

410
175
245

RATED CURRENT (100%)

FOR FREE CONVECTION
T FREE CONVECTION
RATED CURRENT (100%)
FOR 1000 FT/MIN COOLING
T 1000 FT/MIN COOLING

a.

CIRCUIT

'

ADC

ADC

ADC

I75*C

I63C

IS5*C

290
ADC

410

ADC

620
ADC

I48C

I48C I36C

too

100

10

1.0

OVERLOAD TfME- SECONDS

20.

RECURRENT OVERLOAD CURVE MEETING NEMA STANDARDS

(For General Purpose Rectifier Equipments Over 100

KW) AT 40C AMBIENT

RECURRENT OVERLOAD RATING DETERMINATION

(FOR

OVERLOAD CONDITIONS OTHER THAN SHOWN

Many applications require that electrical equipment be designed to permit operation at higher than normal current
for short periods of time. This planned overload requirement

called a recurrent overload condition. (For

is

As a

IN

FIGURE

starting point,

it

is

20)

suggested that the steady state

diode current without recurrent overload current be determined (see Figure 1).

nona recurrent overload rating, the maximum rated

diode current must be reduced. Using a reduced value of
steady state current as an estimate, the data for insertion

To permit

recurrent

current overloads, see the surge curve for the

product being considered.)

Whenever a recurrent overload rating is required, it is

possible to take advantage of the thermal capacity of the
rectifier diode and the heat sink to which it is attached.

into the formula can be obtained

When

the estimate

is

correct, the right side

maximum

given above will equal the

The following procedure

will permit a recurrent overload

providing another overload is not applied until sufficient
time has elapsed to permit the rectifier diode to reach tem-

from Curves 15 and 12.

Example: 200% recurrent overload required for 10 seconds;

three-phase bridge;

perature equilibrium at the calculated continuous rating.

In general, a cool-down period of twice the length of the
overload time is sufficient for the rectifier diode to reach

1000 ft./min. forced air;

ambient = 40C.

maximum
From

the calculated continuous rating temperature equilibrium.

Figures

and

6, steady state rating

without provision

for recurrent overload equals 185 amps/diode. Therefore,

If the

reapplication time (of overload) is shorter, please

contact the factory for application assistance.

a first approximation

To

mula, we have:
Tj Max. = 40 + 115 x .82 + (280

is

recommended. The example given is for the

by using the appropriate curves,

stacks; however,

Tj Max.

Tj Max.

TA
Pss

Rfl JA + (POL - P ss ) Z0 (E
)
Max. Junction Temperature (200 C)

NOTES:

RfljA = Thermal Resistance (Steady State) from

1.

The

2.

NEMA

Curve 12
Dissipation (Under Recur-

Z0 (t ) = Transient

Thermal

from Curve

Resistance

115) .26

Of course, the 3 -phase -bridge output current will be three

times the diode current, 420 amps average steady state, and
840 amps, or 200% current, for 10 seconds.

Max. Ambient (in C)

Diode Power Dissipation (Steady State)
from Curve 15

rent Overload Conditions)

in the for-

The answer of 177.2 indicates that our steady state selection was slightly low. By choosing 140 amps steady state
and 280 amps overload, we come closer to the maximum
rating permissible, based on Tj max. = 200C.

TA + P ss x

Pol = Diode Power

be 125 amps steady state and

Tj Max. = 117.2

recurrent overload ratings can be determined for the other

stacks listed.

where

may

250 amps overload. Substituting these values

calculate the steady state current rating required to

permit a recurrent overload, the following "cut and try"

method
A19013

of the formula
is 200C.

Tj, which

recurrent overload calculation procedure outlined above was

used to obtain the ratings shown by Curve 20.

overload ratings for semiconductor unit power supplies

(lOOKWor

a.

(Under

b.

Overload Conditions) from Curve 12

c.

650

100%
150%
200%

less) are:

rated

load

current and voltage continuously, then:

rated current for

minute, following

100% load; or
100% load.

rated current for 10 seconds, following

Germanium

BDt-7

Diodes

The General Electric types 4JFBD1-7 are germanium back diodes which make use
of the quantum mechanical tunneling phenomenon, thereby attaining a very low
forward voltage drop and eliminating charge storage effects. They feature closely
controlled forward voltage characteristics with very small temperature coefficients.
The very low forward voltage and low capacity of the back diode make it ideal
for use in high frequency applications

and in transistor and tunnel diode switchgermanium back diodes are characterized in seven types accord-

ing circuits. The

ing to the forward current at a forward voltage of 90 millivolts and according to

the maximum reverse leakage current.

absolute
Part

maximum

ratings:

Number

Forward Current
(-55 to

AXIAL DIODE OUTLINE

units

30

15

10

ma

10

1/16"

100C)

Reverse Current

100C)
Lead Temperature,
from case for 10 seconds

(-55 to

(25C) (unless otherwise specified)

1/32"

260C

electrical characteristics: (25*^0)

V F =90
=

MV

Forward Voltage

at I F2 (I F2

=31 F

Reverse Voltage,

IR

Reverse Voltage,

Forward Voltage,
at I FI

10

=I P max
=1 ma

Reverse Peak Point Current

Series Inductance

(Measured

Total Terminal Capacity

Sym.

BD1
10

.5

.2

.1

v F2
v RI
v R2

120

130

170

170

170

160

160

440
440

420

400
465

380
465

350
465

330

330

465

465

Ls

(V R =350 mv)

Recovery Time*

BD2

BD3

BD4

B05

BD6

BD7

Units

mv

Ip
at case)

(unless otherwise specified)

tr

.5

.2

.1

.05

.02

.01

ma
mv
mv
mv
ma

1.5

1.5

1.5

1.5

1.5

1.5

1.5

nh

typ.

typ.

465

3pf

20

10

10

10

10

10

10 pf

1.0

0.7

0.5

0.4

0.4

0.4

0.4 ns

typ.

min.

min.

max

max
typ.

*The recovery time is measured to a reverse current of 1 ma. when switching from 0. 1 volt forward to 0.4 volt
from a 50 ohm source. Since the back diode does not exhibit charge storage, the recovery time is determined by the charging time of the total device capacity.
reverse

I
651

'

Now you can

have performance, staand a choice of six different lead

configurations with GE's POWER-QLAS
C122 silicon encapsulated SCRs. General
Electric makes your mounting procedures
simpler by factory forming the C122 round
leads to match six standard configurations.
The C1 22 also features a tab mounting hole

in plastic

versions
each.

GE
of

1000

lot

quantities cost 85i

offers the industry's broadest line

for

applications. Contact your local autho-

rized
tion

thus eliminating possible pellet damage associated with center-mounting-hole packages. The 8 ampere C122 is available in
50 to 500 volt types. These features, plus
the stability achieved by POWER-GLAS

in

SCRs, Triacs and Triggers designed

all

that permits torque limit free mounting,

GE

distributor for

on GE's

complete informa-

POWER-GLAS SCR and

Triac

products.

GE'S POWER-GLAS MEANS IMPROVED PERFORMANCE AND RELIABILITY FOR YOU.

GENERAL
BASIC TYPES

make the C122 the best

packaged SCRs. Standard 2007

passivation,

bility

ELECTRIC

TO-66 EQUIVALENT

PRINTED CIRCUIT BOARD TYPES

w
652

C5 Series

SCR
1.6A

2N2322-29

RMS Up

to

2N2322A-28A

400 Volts

C511 (Diamond Base)*

The C5 Series of Silicon Controlled Rectifiers are reverse blocking thyristors for use in
low power switching and control applications. They feature two ranges of gate sensitivity and high external gate-cathode shunting resistance.
All-diffused

Two ranges of gate sensitivity- -2N2322-29 200/*A

& 2N2322A-28A20M max.

Diamond

Low

Broad voltage range

Designed

flange types (C511) for convenient

max.

power dissipation

holding current

to

meet MIL-S-19500/276

MAXIMUM ALLOWABLE RATINGS

&&.,' 'Vtwwt

^/Si#ie

;'-':'

2N2322

,'"""

"*
]

= *8

:= 2000

C5U
C5F

2N2323A
2N2324

C5A

2N2324A
2N2325

2N2325A
2N2326
2N2326A
2N2327
2N2327A
2N2328

C5G
C5B

C5H
C5C

2N2328A
2N2329

Peak Positive

RMS

C5D
Anode

to

+145'C

RS>rrmve peak
VOUAGE, V
C
C Is -| 125*C

REVERSE
T. -. -

ohms (jhmma-isA)
25V.*
25V.*
50V.*
50V.*
100V.*
100V.*
150V.*
150V.*
200V.*
200 V.*
250V.*
250V.*
300V.*
300V.*
400V.*

2N2322A
2N2323

NON-REPET1TIVE PEAK
REVERSE VOLTAGE,

0MTAte VOltAGS, Vnui

'

Voltage,

On-State Current,

T-

-.

25V.*
25V.*
50V.*
50V.*
100V.*
100V.*
150V.*
150V.*
200V.*
200V.*
250V.*
250V.*
300V.*
300V.*
400V.*

10

Mfflfawc.)

65C

le -

125"C

40V.*
40V.*
75V.*
75V.*
150V.*
150V.*
225V.*
225V.*
300V.*
300V.*
350V.*
350V.*
400V.*
400V.*
500V.*

PFV

500 Volts

I T , RMS )

Average On-State Current,

V s

1.6

Amperes

Depends on conduction angle

I T(AV)

(all

conduction angles)

(see Charts

2, 3,

and 6)

Critical Rate-of-Rise of On-State Current, di/dt:

Gate Triggered Operation, Switching from Rated Voltage

Peak One Cycle Surge (non-rep) On-State Current,

Pt

(for fusing), for times

>

50 Amperes per microsecond

1.5 milliseconds

0.5

Ampere 2 seconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, P G(AV

Peak Positive Gate Current, I GM

Peak Positive Gate Voltage, VGM
Peak Negative Gate Voltage,

Amperes*

15

I TSJI

0.1

Watts*

0.01

Watts*

0.1

Amperes*
6 Volts*

V GM

6 Volts*

T STG

-65C

to

+150C*

Operating Temperature, Tj

65C

to

+125C*

Storage Temperature,

*Indicates data included on JEDEC type number registration

fWhen ordering the Diamond Base versions, be sure to include the proper voltage letter symbol. For example The 25V
Diamond Base version of the C5U (2N2322) is type number C511U.
JThe C511 series is identical to the C5(2N2322-29) series except that a diamond base flange is soldered to the base of the
unit. All ratings and characteristics are common to both series. See charts 17 thru 21 for Transient Thermal Impedance
and Current Curves.
:

653

C5 SERIES

CHARACTERISTICS
pMtMi&'L

TEST

PEAK REVERSE

or

OFF -STATE
CURRENT
All

Irrm

MIN.

or

2.0

10.0

2N2322-29
(C5 Series)

2N2322A-28A

CONDITIONS

Vrrm = V DRM = Rated.

T t = +25C, R GK = 1000 Ohms 2N2322-29 (C5 Series)
= 2000 Ohms 2N2322A-28A
.

T t = +125C, R GK =

100*

10

200

20

20.0

350*

10

75*

v GT

1000 Ohms 2N2322-29 (C5 Series)

2000 Ohms 2N2322A-28A

T c = +25C, V D = 6Vdc, R L =
R GK = 1000 Ohms
T c = +25C, Vi, = 6Vdc, R L =
R GK = 2000 Ohms
T c = -65C, V D = 6Vdc, R L =
R GK = 1000 Ohms
T c = -65C, V D = 6Vdc, R L =
R GK = 2000 Ohms

100

Ohms

100

Ohms

100

Ohms

100

Ohms

T c = +25C, V =
R GK = 1000 Ohms
T c = +25C, V D =
R GK = 2000 Ohms

Vdc

2N2322-29
(C5 Series)

0.35

0.5

0.8

2N2322A-28A

0.35

0.4

0.6

0.7

1.0*

2N2322-29
(C5 Series)

2N2322A-28A

0.25

0.5

2N2322A-28A

0.1*

2.0

2.2

1.9

2.0*

Types

6Vdc,

RL =

100

Ohms

6Vdc,

RL =

100

Ohms

T c = -65C, V = 6Vdc, R L = 100 Ohms

1000 Ohms
T c = -65C, V D = 6Vdc, R L = 100 Ohms
R GK = 2000 Ohms
T c = +125C, V 1)M = Rated V I)RM Value
R GK = 1000 Ohms, R L = 100 Ohms
T = +125C, V DM = Rated V 1)RM Value
R GK = 2000 Ohms, R L = 100 Ohms
T = +25C, I TM = 4.0A, Single Half Sine
Wave Pulse, 2.0 Millisec. Wide
T r = +85C, I T(AV = 1.0A, Half Sine Wave,

0.9*

0.1*

v TM

1(

R GK =

2N2322-29
(C5 Series)

All

TEST

MAdc

2N2322A-28A

PEAK ON-STATE
VOLTAGE

UNITS

mA

Igt

2N2322-29
(C5 Series)

GATE TRIGGER
VOLTAGE

MAX.

40

Types

GATE TRIGGER
CURRENT

TYP.

60 Hz, 180 Conduction Angle

HOLDING
CURRENT

mAdc

Ih

Types
Types
2N2322-29

0.15*

0.4

2N2322A-28A

0.10*

0.4

All

All

TURN-ON TIME
All

td

+t

1.0

2.0

1.5

3.0*

1.4

COMMUTATED

Msec

1000
2000

Ohms 2N2322-29 (C5

Ohms 2N2322A-28A

Series)

T c = +25C, I F = 1.0A, V DM - Rated V DRM Value,

Gate Supply 6 Volt Open Circuit, 330 Ohm
Load Line, 0.1 ^sec. Rise Time, 5 ^sec. Min.
Pulse Width.
:

40

Msec

TURN-OFF TIME
All

T = +25C, R L = 10K
T c = -65C, R L = 10K
T c = +125C, R L = 50K

Types

CIRCUIT-

R GK =

Types

T c = +125C, I TM =

1.0A Peak.
Rectangular current pulse, 50 Msec duration. Rate of
rise of current <10 amperes/^sec. Commutation rate
^5 amperes/Vsec. Peak reverse voltage = rated V RRM
volts max. Reverse voltage at end of turn-off time
interval = 15V. Repetition rate = 60 pps. Rate of

rise of re-applied off-state voltage (dv/dt)

20V/
Msec. Off -state voltage
rated
DRM volts. Gate bias
during turn-off time interval
volts, 100 ohms.

indicates data included on

JEDEC type number

registration

654

C5 SERIES
S*
JUNCTION
=

I25"C

130
120

I//

110

100

Vr

|80

i
r*-i
^CONDUCTION

ANGLE

90

25C

601 90|

30|

120

DC

80

NOTE

RATINGS DERIVED FOR 0.01 WATT AVERAGE GATE POWER.

(31CASE TEMP. IS MEASURED ATA POINT IN THE CENTER
OF THE. BOTTOM OF THE CASE.

(2)

Nfl TE:

f\

VOLTAGE MEASURED
ICH

ir

FROM BOTTOM
bt.

0.4

0.2

0.8

0.6

1.0

1.2

1.6

1.4

1.8

AVERAGE ON-STATE CURRENT-AMPERES

2.

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

WAVEFORM

SINUSOIDAL CURRENT

DC,

H2.0
O

2.0

1.0

3.0

5.0

4.0

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

1.

MAXIMUM ON-STATE

Z
B

CHARACTERISTICS

I
l

1.6

180

,80
|

N01ES

(1)

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400Hz.

120

ANG LE^

GATE POWER

%
2

90

1.2

CON DUCTKIN
INGL :=3o

/ /

NOTES:

(1)

(2)

\A

30
20
10

10

180

'CO
\NG

\l 80

60 90 120

0.2

s o

0.2

4.
1

0.3

0.4

0.4

0.8

0.6

1.0

0.5

0.6

0.8

0.7

AVERAGE ON- STATE CURRENT- AMPERES

130

120

NOTE:S:

RESISTIVE OR INDUCTIVE LOAD, 50 TO

(1)

100

110

90
ioo

t/T'DUTY CYCLE

'1

V *r

70
OR INDUCTIVE LOAD, 50 TO 400 Hz
CASE TEMPERATURE MEASURED ATA POINT IN
THE CENTER OF THE BOTTOM OF THE CASE.
RATINGS DERIVED FOR 0.01 WATTS AVERAGE
GATE POWER DISSIPATION.

h- t

Vvv

80
80

'A

X//

ii>

^\ %\

Q.

400 Hz

RATINGS DERIVED FOR 0.01 WATTS AVERAGE

GATE POWER DISSIPATION.

(2)

I.

MAXIMUM ON-STATE POWER DISSIPATION FOR

SINUSOIDAL CURRENT WAVEFORM

110

1.4

1.2

AVERAGE ON-STATE CURRENT-AMPERES

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE FOR

SINUSOIDAL CURRENT WAVEFORM

3.

JUNCTION TEMPERATURE =I25C

FREQUENCY 50 TO 400 Hz

/"

40

NOTES:(l> RESISTIVE
(2)

(3)

60
50

40

t/T"OUTY CYCLE

\\

30
20
DUT-lf

CYC -E-

^
V\
s

^_
/I2

\
1/ i

\M 1/3

1/2

10

0.4

0.6

0.8

0.1
1.0

0.2

0.3

0.4

0.5

0.6

0.7

1.2

AVERAGE ON- STATE CURRENT-AMPERES

AVERAGE ON-STATE CURRENT-AMPERES

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE FOR

RECTANGULAR CURRENT WAVEFORM

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

RECTANGULAR CURRENT WAVEFORM
655

C5 SERIES
NOTES:
1

1)

SHADED AREA REPRESENTS

LOCUS OF POSSIBLE TRIGGER

r~

^^^ V
^
^ ^S
\ \
^\ ^^

j--65 B C

+Z5C

\KN

IX

TY CrCLE

0.8

i/ia

>

^NO TES:(I>
(2J

JUNCTION TEMPERATURE = I25C

FREQUENCY, 50 TO 400 Hz

\
/
\s

S> N
s^\ N

0.4

0.2

0.8

0.6

1.0

1.2

1.4

1.6

NN

REQUIRED TO TRIGGER

ALL UNITS

MAXIMUM GATE VOL TAGE

THAT WILL NOTTI
ANY UNITS AT +12 5"C

AVERAGE ON-STATE CURRENT-AMPERES

II

(f

MAXIMUM ON-STATE POWER DISSIPATION FOR

RECTANGULAR CURRENT WAVEFORM

SUPPLY FROM TEST UNIT

TERMINALS.

v\
>

0.2

saTE S upp LY IMPEDANCE

-65C

'

/J

(4 )

'

v\ \\

JUNCTION TEMPERATURE
-65'C TO + I25 B C.
6 VOLTS DC ANODE TO

(2)

TO TRIGGER ALL UNITS

1/3

(3)

1.2

/2

INSTANTANEOUS GATE CURRENT

(I G )

MICROAMPERES

GATE TRIGGERING CHARACTERISTICS FOR

8.

2N2322-29 (C5 SERIES) ONLY

NOTES: (1) JUNCTION TEMPERATURE RANGE,-65C TO + I25"C.

SHADED AREA REPRESENTS LOCUS OF POSSIBLE

TRIGGERING POINTS FROM -65C TO +I25*C.
(3)6.0 VOLTS DC ANODE-TO-CATHODE.
(4) GATE SUPPLY IMPEDANCE '2000 OHMS LOOKING
INTO SUPPLY FROM TEST UNIT TERMINALS.
(2)

\
\

MINIMUM GATE CURRENT REQ'D TO TRIGGER

ALL unhrs AT +2 5C
-65C
;

0.9

0.8

\s

I.

\\
\\
^N

0.6

\\

Ys

MINIMUM GATE
VOLTAGE REQ'D
TO TRIGGER

N>

UNI

\\

v
^s

.OB
25C

\\

\\

GATE TRIGGER VOLTAGE

\
>QCec

\\ \\

^1

(2)

DATA TAKEN USING RECTANGULAR

GATE PULSES.
n
J UNCI ION
EMP :RAT JRE 25C.

5 Al:

0.3

0.2

(1)

\s,

V v\

Nl DTES

0.2

GATE TRIGGER CURRENT

^
V\

MAXIMUM GATE
"

VOLTAGE THAT WILL

NOT 1 RIGG!:r an Y
UNITS AT i

r
4

-/?-

12

-40 -20

20 +40 *60 *80 *I00

10.

INSTANTANEOUS GATE CURRENT- MICROAMPERES

GATE TRIGGERING CHARACTERISTICS

FOR 2N2322A-28A ONLY

KITES

(1)

12)
(1)

<2>

32

28

TYPICAL GATE TRIGGER CURRENT AND VOLTAGE

VARIATION WITH GATE PULSE WIDTH

s.

NOTES

24

20

16

GATE PULSE WIDTH-MICROSECONDS

-100 -80 -60

CURVES SHOWN ARE FOR VARIOUS

JUNCTION TEMPERATURES.
ANODE SUPPLY VOLTAGE. 5 OVDC MIN

JUNCTION TO AMBIENT
CELL LEAD MOUNTED,

2.0

'-MAXIMUM AT 2S*C
-MAXIMUM AT I2S*C

ZJ
_i

UN CTION TO

1.0

0.5

IE

a; E

U
%

^N

0.2

NX -MINI MJM

\ -MINI IUM

AT -65'C

AT 25-C
25"C

if

TIME

11.

IN

500

1000 2000

5000 IQO00

20000

SECONDS

50O00

OOpOO

GATE-TO-CATHOOE RESISTANCE-OHMS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

12.

656

MAXIMUM AND MINIMUM HOLDING CURRENT

VARIATION WITH EXTERNAL GATE-TO-CATHODE
RESISTANCE FOR 2N2322-29 (CS SERIES) ONLY

C5 SERIES
18
in

NOTES

UJ

Uy

14

n
y^

12

AT RATED LOAD CONDITIONS.

PRIOR TO SURGE

-65C TO +I25C.
80

^z
WW

10

-t't

UJ

*l<5
UJI-

Q.CO

<o
X

(1)

v^JUNCTON TEMPERATURE

o g

(t
>
o
* o 40

20

10

JUNCTION TEMPERATURE

60

5000

MAXIMUM ALLOWABLE SURGE

14.

I00O00

50,000

TYPICAL BREAKOVER VOLTAGE VARIATION WITH

EXTERNAL GATE-TO-CATHODE RESISTANCE
2N2322-29 (C5 SERIES) ONLY

NOTE:

20OO0

10,000

GATE TO CATHODE RESISTANCE- OH MS

(NON-REPETITIVE) ON-STATE CURRENT

25c

I25*C-

2000

CYCLES AT 60 Hz

13.

NOT ES:

VOLTS ANODE VOLTAG

VOLTS ANODE VOLTAG

OHMS GATE CIRCUIT

(1)

(2)

K)00

RESISTANCE.

^^vMAXIMUM

IAXIMUI

^^
S

TYPICAL

iso

MINIMUH

TYPICAL

M MIMUM (90% OF
-60

-40

-20

20

UNITS)

40

60

80

100

-60

120

15.

20

-20

40

60

80

100

120

JUNCTION TEMPERATURE- "C

JUNCTION TEMPERATURE- "C

VARIATION OF GATE TRIGGER CURRENT WITH

TEMPERATURE FOR 2N2322-29 (C5 SERIES) ONLY

16.

VARIATION OF GATE TRIGGER VOLTAGE WITH

TEMPERATURE FOR 2N2322-29 (C5 SERIES) ONLY

100

80
60

/
JUNCTION TO AMBIENT. CELL
LEAD MOUNTED IN FREE
CONVECTION AMBIENT.
DEVICE NOT FASTENED TO

40
20

EXTERNAL HEATSINK.
v
^.

JUNCTION TO CASE

<
s

0.01

1.0

0.1

TIME

17.

IN

10

SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

(DIAMOND BASE)
657

100

C5 SERIES
130

N OTES (1) RESISTIVE

(2)

OR INDUCTIVE LOAD, 30 TO 4O0 Hz

RATINGS DERIVED FOR 0.01 WATTS AVERAGE

(3)

GATE POWER DISSIPATION

CELL LEAO MOUNTED IN FREE CONVECTION
E XTER NAL

^ e*

g==
X^
^^^

HEAT SINK

l
,

i"

no

ioo

CONDUCTION
ANGLE 3C

ft.

w 80
1-

5 70
n
z
< 60

\^

^,

u
-i

50

I
X

30

<
* 20
cow ucno WANS -E

y 60

*'

~DC

I8<?

GATE POWER DISSIPATION.

1
< 40

\\ \
sN 80*
90'

S
? 30
x
<
S 20

60*

= 10"

12

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz

CASE TEMPERATURE MEASURED AT TAB ON
CELL HEADER FLANGE.

(1)

2)

CONDUCTION
ANGLE

v.\
<

"

\\

NOTES.

I8C

0'

-90"

>

\\

< 40
s

60

^c

120*

DC

10

180

'"/

10

ANGLE
1

0.4

0.2

0.6

C1B

1.0

1.2

0.4

AVERAGE ON-STATE CURRENT-AMPERES

18.

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

FOR HALF WAVE RECTIFIED SINE WAVE

(1)

(3)

0.8

1.0

1.2

AVERAGE ON-STATE CURRENT-AMPERES

19.

OF CURRENT (DIAMOND BASE)

(2)

0.6

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

HALF WAVE RECTIFIED SINE WAVE
OF CURRENT (DIAMOND BASE)

RESISTIVE OR INDUCTIVE LOAD, 50 TO

400 Hi
0.01 WATTS AVERAGE
GATE POWER DISSIPATION.
CELL LEAD MOUNTED IN FREE CONVECTION
AMBIENT DEVICE NOT FASTENED TO AN
EXTERNAL HEAT SINK.
RATINGS DERIVED FOR

:I00
J
'

90

DUTY CYCLE

N
"1/12

/6

1/4

1/2

1/3

u
I

80
NOTES, (1)
12)

70
|

3)

jeo
;

'

50

40

20.

Wa
*

"">H_ t/T.DUTY CYCLE

'

0.4

AVERAGE ON-STATE CURRENT-AMPERES

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz

CASE TEMPERATURE MEASURED AT TAB ON
CELL HEADER FLANGE.
RATINGS OERIVEO FOR 0.01 WATTS AVERAGE

0.6

,_

0.8

IO

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

21.

(DIAMOND BASE)

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

RECTANGULAR CURRENT WAVEFORM
(DIAMOND BASE)

OUTLINE DRAWING
(1)

This zone is controlled tot automatic

handling. The variation in actual diameter
within this zone shall not exceed ,010.

(2)

Measured from mai. diameter

ol

the

actual device.
(3)

The specified lead diameter applies in the

zone between .050 and .250 from the base
seat. Between .250 and 1.5 maximum of
.021

diameter is held. Outside of these

is not controlled. Leads
be inserted, without damage in 031

the lead diameter

may

holes while device enters .371

centric with lead hole cncle.

hole con-

(4]

#4

[5]

.120 hole l#31

(6|

Int

(?)

#440

(8)

#2

(9)

Shoulder washer, vulcanized fiber

40 screw,

drill)

tooth lockwasher, st'n steel

nut, st'n steel

56 screw,

st'n steel

110)

Mica

111)

0935 hole (#42 drill)

#2-56 nut, st'n steel

(12)
All

* long

st'n steel

long

insulator, .003 thick

dimensions

in

1.2

AVERAGE ON-STATE CURRENT-AMPERES

inches

DIAMONO BASE INSULATED MOUNTING

658

SCR

C6.C611

C7 SERIES

~|

SEE PAGE 333

For High Volume Light Industrial, Computer, and Consumer Applications

Low Cost
All-diffused for Proved Reliability
Popular Voltage Range
up to 200V
Sensitive Gate (1 ma to Trigger)
Standard TO-5 Package (C6) for Convenient Mounting
Diamond Flange Option (C611) Simplifies Heat Dissipation

OUTUNE DRAWtNG

MM J hWft .MB art

l

se-t&Mtti

(wiB

ttrita

sUi-^^-v--,

<

2*-13 majtottfeflMtUMt oftteft, {

JCI dtapcte :& fL

"

itiinnwi rt wf tonimttMt tfrtfe

mfll/bt ftsuferf. fttfMi taKfe f I
tniii

wa **** mJtobc

*4
L

vtft t*d

tak <bcIl

^*Mfl Wtt*. at* Mf

,'
'

tftFlBilawfc.

fgflsw^w,

*56.sotw.

S'ft

if* steel

kng

HI

1'

'ii/V '

*<

-fcr

'HftWUMubO^'ADlNi*
'

.''.'--(MSSE."''
'"''* '" "'

"'l

'

..li
"'

I-

tt

Peak Forward Blocking

Voltage, Vfxm

Types
Tj

= -40C to + 125C
Rgk = 1000 OHMS

C6U, C611U
C6F, C611F
C6A, C611A
C6G, C611G
C6B, C611B

iSftuUltW

WWTM

Non-Repetitive Peak
Reverse Voltage,
V H oM(non-rep)

Working and Repetitive

Peak Reverse Voltage
VitoM(wkg) and V K osi(rep)
Tj

= -40C

to

+125C

(<S
T,

Millisec.)

= -40C

to

+125C

40 Volts

25 Volts

25 Volts

50 Volts

50 Volts

75 Volts

100 Volts

100 Volts

150 Volts

150 Volts

150 Volts

225 Volts

200 Volts

200 Volts

300 Volts

MAXIMUM ALLOWABLE RATINGS

Peak Forward Voltage,

RMS

PFV

300 Volts

Forward Current, On-state (independent

of conduction angle)

Average Forward Current, On-state

Peak One Cycle Surge Forward (Non-repetitive) Current, I PM (surge)

Peak Gate Power, P GM
Average Gate Power, P G(A v)

Peak Gate Current,

Storage Temperature,

Amperes

10 Amperes
0.1

0.01

I G fm

Peak Gate Voltage, Forward

1.6

Depends on conduction angle (See Charts)

&

Reverse,

0.1

Ampere

40C to
40C to

+150C
+125C

VG fm & VGRM

T stg

Operating Temperature

Watt
Watt

6 Volts

Peak non-recurrent surge forward current during turn-on time interval

(Current rise time =5.0

fisec

Minimum)

40 Amperes
659

CHARACTERISTICS

C6 C611
#

SS:i

"'}

Forward Breakover

f^

Mk

''^

'".'*?'''..

fatf^CassMeW

Volts

V(BR)FX

= -40-C to +125C
= 1000 ohms

T,

Voltage

Rok

C6U, C611U

tlKOT^

Reverse or Forward
Blocking Current

&':-:.

V u =Yn = Rated

2A

'

40

Gate Trigger Current

IOT

Gate Trigger Voltage

>!*^

0.8$

Vfm

>**

-Mk;^

0.2

'f'.'ftj':

Peak On-Voltage

**^

*AAS-

mAdc

1.0

Vde

tyjffit*

US

Vde

0.26

1.4

1.2

= 2K

ffJIRIg
fe

0.16

Turn-On Time

td

+ t,

'.*-.

'';

.njafe'

-aJtfe

1.4

V<rep) Value

= 100K) ohm*
T, = 12*C, Res = 10W ohms
Tj = 25 C, Vfx = 6Vdc, Rl = 100 ohms
Rl = 100 ohms, Ro = 1000 ohm*
T, = 26'C, V = 6Vdc
Tj = -40"C. Vs = 6Vdc
T = 126'C Vr = Rated V,z* Value.
T, = 25C, If = 1.0A, Single Half Sine
T,

Wave
Holding Current

CPS

Sinusoidal Waveform, 50 to 400

25
50
100
150
200

C6F,C611F
C6A, C611A
C6G, C611G
C6B, C611B

C, Ro

Pulse, 2.0 Millisec.

Wide

Rab = 1000 ohms

Tj = 26C, Ri. - 10K ohms
Ti = 126*C, R b = 60K ohfflW

1
|

= 25C, If = 1.0A, Vfx = Rated Vfxm Value.

Supply 6 Volt Open Circuit, 330 ohm Load Line,
0.1 /tsec Rise Time.
Tj

Msec

L-^p--

= 125"C, I = 1.0A,

Ctrcuit-Coisanitated
Turn-off Time

'r.ijSL2

Thermal Resistance,

#J-A

160

C/watt Steady State

J-0

10

C/watt Steady State

'

>>^PfiPffipll

Tj

VJ*WC.

1.0A, Reapplied Vrx* = Rated

Vnut Vahie, Rate of Rise of Reapplied Vm =
20 Volte per paec, Su = 100 ohms.

'

I (Recovery)

C6, Junction to

Ambient
C611, Junction to

Case

130

jf
^
^

>*

120

JIM enow
TEMPE RATURE

71

fr-29"C

sS

clOO

\^

90

^,10
.

S*C-n.

IX)

III

O.
51

on

CON JUCTON
ANGLE 30

Jn
60*

90'

12 0*

DC

180*1

K
Z

Y0yyy?
80*

r
V

s.

JCTTfct

ON-VOUM EMEMUM :dj(kt

ON LEADS l/Z NCHFiRONBOT-

50

n3TES

s
g
*

1(2)

30

(3)

20

(1)

RESISTIVE OR INDUCTIVE LOAD, 50 TO

RATINGS DERIVED FOR

GATE POWER.

CASE TEMPERATURE

O.OI

IS

400 CPS.
WATT AVERAGE

MEASURED AT
ur

POI nt

nt

i ASE.

10

_t
*-*

0.4

0.2

2.0

S.0

4.0

SO

MSTUmNEOUS ON-VOLTME-VOLTS
1.

0.6

0.8

1.0

1.2

1.4

AVERAGE FORWARD CURRENT-AMPERES

2.

C6MAXIMUM ALLOWABLE
SINUSOIDAL CURRENT

MAXIMUM FORWARD CHARACTERISTICSON-STATE

660

CASE TEMPERATURE FOR

WAVEFORM

1.8

C6, C611

no

100

i\>

60

CONDUCTION
ANGLE =30

-90

DC

ISO"

12

90

80
1

NOTES,

70

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 CPS.

K) CASE TEMPERATURE MEASURED AT TAB ON
CELL HEADER FLANGE.
1)

60

GATE POWER DISSIPATION.

50

40

US

30

6l
20

10

ISO",

ANGLE
1

0.2

0.8

1.2

1.0

AVERAGE FORWARD CURRENT-AMPERES

3.

120

120

NC)TES:
110

RESISTIVE OR INDUCTIVE LOAD, 50 TO

(2)

RATINGS DERIVED FOR

0.01

u
no
e

SATE POW; :r.

100

100

400 CPS
WATT AVERAGE

(1)

>

'

C611 MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

SO

<r

80

Li

X
\

70

40

30
20

y
CD
4

\
\

/6|

(3)

ivyyyyy\

50

DUT Y CYCILE'I /I2|

(2)

60

80

1/3

1/4

1/21

VO TES:(I) 'RESISTIVE OR INDUCTIVE LOAD, 50 TO

i
\
t

90

a.
7-

V \>\

CONC1UCTK)N AH GLE- 30

<

WI2 3*180

6 0*

180

:onouct M
ANGLE

gj

400 CPS.
CASE TEMPERATURE MEASURED ATA POINT IN
THE CENTER OF THE BOTTOM OF THE CASE.
RATINGS DERIVED FOR 0.01 WATTS AVERAGE

60
50

< 40

= 30
x
<

/w*
-t-H

1/T-DUTY CYCLE

DC

'

).l

0.2

0.3

0.4

0.5

0.6

0.2

FOR SINUSOIDAL CURRENT

0.6

0.8

1.0

1.2

AVERAGE FORWARD CURRENT-AMPERES

AVERAGE FORWARD CURRENT-AMPERES

CoMAXIMUM ALLOWABLE

0.4

AMBIENT TEMPERATURE

5.

CoMAXIMUM ALLOWABLE

CASE TEMPERATURE FOR

RECTANGULAR CURRENT WAVEFORM

WAVEFORM

I
661

130

C6, C611
120

SlOO

DUTY CYCLE

1/4

/6

- I/1Z

NOTES.

RESISTIVE OB INDUCTIVE LOAD, 50 TO 400 CPS

CASE TEMPERATURE MEASURED AT TAB ON
CELL HEADER FLANGE.
RATINGS DERIVED FOR 0.01 WATTS AVERAGE

(I)

12)

3)

'"A

Y*y^w
f-t-H

0.4

1/2

1/3

0.6

O.S

t/T-DUTY CYCLE

1.2

IjO

AVERAGE FORWARD CURRENT-AMPERES

C611MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

6.

130
j
i

N JTES:

(2)

110

100

5
15

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 CPS

RATINGS DERIVED FOR 0.01 WATT AVERAGE

GATE POWER DISSIPATION.

(1)

""*

- ,H

"I

90

i/T-OUTY CYCLE

so

V-

S 70

V ^i\ ^S

3 60

8 so

>

I~

* 30

Z
< 20

\\ \N

\N

JUTY CYCt E-l/12

\X
i/i

1/ 4

1/3 1/2

10

0.4

0.3

0.2

0.1

0.6

0.5

AVERAGE FORWARD CURRENT-AMPERES

C6

7.

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

WAVEFORM

FOR RECTANGULAR CURRENT

\
>l

3
HI

ut

\\

Nl3TES

\N

(1)

(2)

DATA TAKEN USING RECTANGULAR

GATE PULSES.
J UNCI ION EMP iRAT JRE
25V

GAT

J*

TRI 3GER

VOL AGE

it

GAT : TRH IGER CURI ENT

12

16

20

24

GATE PULSE WIDTH-MICROSECONDS

8.

TYPICAL VARIATION OF GATE TRIGGER VOLTAGE

AND CURRENT WITH GATE PULSE WIDTH

662

C10 SERIES

SCR

2N1770A-2M777A

The General

Electric CIO Series (2N1770A-2N1777A) Silicon Controlled Rectifier is a

reverse blocking triode thyristor semiconductor for use in low power switching and
phase control applications requiring blocking voltages up to 400 volts, and RMS load
currents up to 7.4 amperes.

This series device

ratings

is

from -65C

The following

designed to meet MIL-S-19500/168

to

and has

full

blocking voltage

+150C.

G. E. Co., low-current

SCR

types are also available in the same package

outline

Cll (2N1770-2N1778, 2N2619) (Pub. #150.21)Tj

C15
(Pub. #150.22) Tj

= 125C, up to 600V PRV

= 105C, up to 600V PRV

MAXIMUM ALLOWABLE RATINGS

'!

,>"-

-<:-:'

*Wf

'
,

'-

C10U(2N1770A)
C10F(2N1771A)
C10A(2N1772A)
C10G(2N1773A)
C10B(2N1774A)
C10H(2N1775A)
C10C(2N1776A)
C10D(2N1777A)
(1)

pWTvt *BM ***e*j(t-'f. ^s:S woratftwiaiiBtitvtBg 1

PEAK FORWARD
'!

BLOCKING VOLTAGE, Vnv

To 5Cte+1S9C

'

ie-.^^S^iMMHm^:^
25
50
100
150
200
250
300
400

25 Volts*
50 Volts*
100 Volts*
150 Volts*
200 Volts*
250 Volts*
300 Volts*
400 volts*

;:

VOtTAGt VwoHifpi'5

Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*
Volts*

"

-mmmt<m^mi^i%y*mfym!-n^

^^^l}^^_^^^^^h,V
35 Volts*
75 Volts*
150 Volts*
225 Volts*
300 Volts*
350 Volts*
400 Volts*
500 Volts*

Values apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which
maximum V FO m and V RO m ratings apply = 18C per watt.

480 volts
Peak Forward Voltage, PFV
angles)
_7.4
amperes
conduction
(all
RMS Forward Current, On-State_
=
at
T
105C*
4.7
amperes
I
Average Forward Current, On-State, Half Sine Wave,
c
and
angle
Chart
5
conduction
(see
.Depends
on
3,
7)
Average Forward Current, On-State
amperes*
60
(surge).
Peak One-cycle Surge Forward Current, I Fm
Calculate from Chart 9
Ft (for fusing)
See Chart 10
LimitTurn-On Current
5 watts*
Peak Gate Power Dissipation, P GM
0.5 watts*
Average Gate Power Dissipation, P G (AV) 2 amperes*
Peak Gate Current, I GFm10 volts*
Peak Gate Voltage, Forward and Reverse, V GF h and V GKM-65C
to
+150C*
T
Storage Temperature, stg
-65C to +150C*
Operating Temperature, Tj
JL51b-in (17kg-cm)
Stud Torque
.

Indicates data included on

"NOT TO EXCEED

JEDEC type number registration.

GATE POWER RATINGS

663

CHARACTERISTICS

C10 SERIES
TBT

SYMBOl

PEAK REVERSE OR
FORWARD BLOCKING

Irom

CURRENT)-

Ifom

MIN.

MAX.

UNITS

or

C10U(2N1770A)
C10F(2N1771A)
C10A(2N1772A)
C10G(2N1773A)
C10B(2N1774A)
C10H(2N1775A)
C10C(2N1776A)
C10D(2N1777A)

mA

Irx

<AV)

or
Ifx

mA

(AV>

C10U(2N1770A)
C10F(2N1771A)
C10A(2N1772A)
C10G(2N1773A)
C10B(2N1774A)
C10H(2N1775A)
C10C(2N1776A)
C10D(2N1777A)

mAdc
mAdc

15

Igt

30*

GATE TRIGGER VOLTAGE

Vdc

2.0*

VoT

Tc= +105C, Io = 4.7A

180 Conduction Angle
= Vfxm = 25V Peak
= Vfxm = 50V Peak
= Vfxm = 100V Peak
- Vfxm = 150V Peak
= Vfxm = 200V Peak
= Vfxm = 250V Peak
= Vfxm = 300V Peak
= Vfxm = 400V Peak
To = +25C, Vfx - 12 Vdc, R,. = 250 ohms
Tc = -65C, Vfx = 12 Vdc, R,. = 250 ohms
T c = -65C to +150C, Vfx = 12 Vdc,
Vkxm
Vrxm
Vrxm
Vrxm
Vrxm
Vrxm
Vrxm
Vrxm

4.5*
4.5*
4.5*
4.0*
3.0*
2.5*
2.0*
1.0*

GATE TRIGGER CURRENT

R,,

0.2*

PEAK ON-VOLTAGE

HOLDING CURRENT

Iho

1.85

Vdc

To

Tc

mAdc

25

=
=

9j-c

3.1

C/watt

250 ohms

+150C, Vfxm

+25"C,
pulse. Duty

Ifm
cycle

Rated Vfom, Rl

15A Peak,
g 1%.

250 ohms

millisecond wide

Tc = +25C, Anode supply = 24 Vdc, Gate

Supply = 7V, 20 ohms. Initial forward current
pulse
wide.

EFFECTIVE THERMAL
RESISTANCE (DC)

CONDITIONS

Tc= -65Cto +150C

V RO m = Vkom = 25V Peak
Vrom = Vfom = 50V Peak
Vrom = Vfom = 100V Peak
Vrom = Vfom = 150V Peak
Vrom = Vfox = 200V Peak
Vrom = Vfom = 250V Peak
Vrom = Vfom = 300V Peak
Vrom = Vfom = 400V Peak

9.0
9.0
9.0
8.0
6.0
5.0
4.0
2.0

FULL CYCLE AVG.

REVERSE OR FORWARD
BLOCKING CURRENTt

TEST

0.5A, 0.1 millisecond to 10 milliseconds

Junction to case.

fValues apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which
Vfom and Vrom ratings apply equals 18C/watt.
*Indicates data included on JEDEC type number registration.

maximum

OUTLINE DRAWING
(Complies with JEDEC registered TO-64 outline)

TERM.

SEATING
PLANE

(GATE)

NOTES:
Contour and orientation

(1)

(2)
(3)

(4)
(5)
(6)

(7)
(8)

of fixed

terminal

lugs

are optional.
The outline contour (with exception of hexagon)
is optional within zone defined by <t>0 and J.
Minimum diameter of seating plane.
A chamfer (or undercut) on one or both ends
of hexagonal portion is optional.
Minimum difference in terminal lengths to
establish datum line for numbering terminals.
Pitch diameter thread 10-32 NF-2A (Coated).
Reference (Screw Thread Standards for Federal
Services 1957) Handbook 1957 H28.
Minimum spacing between terminals.
Insulating kit available upon request.

10-32 STEEL NUT

CADMIUM PLATED
LOCKWASHER,
CADMIUM

PLATED

STEEL

INCHES
MAX.

SYMBOL
A

WIN.
.300

.400

.080

.136

7.62

10.16

2.03

3.45
10.77

.424

4>D

00,

.400

.424

10.77

3,4

10.16
.437

NMt!

11.10

.013

.330

e,

.060

1.52

.060

.175

1.52

4.45

.700

.855

17.78

.163

.189

4.14

21.72
4.80

0M
N

.400

.453

10.16

11.51

.078

N,

664

MILLIMETERS
MAX.

MIN.

1.98

0T

.040

.075

1.02

1.91

0W

.1658

.1697

4.212

4.310

300

C10 SERIES

250

^-^

JUNCTION

TEMPERATURE 25

*C

-+ 150

"C

>

//

JUNCTION

/" 25C

TEMPERATURE' I50*c7

/
/
/

1,X

FORWA RD
BREAKOVE R VOLTA GE

INCREASES T 3

VOLT AGE

10

12

II

13

VOLTS

MAXIMUM FORWARD

CHARACTERISTICSON-STATE
]

INSTANTANEOUS ON - VOLTAGE -VOLTS

2.0

1.5

1.0

0.5

INSTANTANEOUS ON

MAXIMUM FORWARD

CHARACTERISTICS,

HIGH CURRENT LEVELON-STATE

rs

140
"*

ION

\n:

AN GLE-X

60

30*

---J

90*

"~~~-~~K^_

<~\

A\

0"

4 180

DC,

120*

ANGLE

180s

ANGLE

ISO*

90

notes:

I20/

IRES STIVE OR INDUCTIVE LOAD, 50 TO 400 Hi.

ARE OERIVEO FOR 0.5 WATT AVERAGE GATE
) RATINGS
POWER.
1/2" IS MINIMUM FIN SIZE FOR WHICH RATINGS
(2 )l 1/2" X
APPLY. I8*C PER WATT MAXIMUM THERMAL RESISTANCE
T.ASF TO AMRIFNT>|
(< (RATINGS APPLY
FOR ANODE CURRENT RATE OF RISE =5

90"

(2

bW
CONDUCTION

ANGLE

3C

NOTES:

/
'
' yy '/
/M '/

(1)

20

(3)

n~

_^
AVERAGE

<

150'C.

\//y

30

JUNCTION TEMPERATURE

(2)

FORWARD

FREQUENCY -50 t6 400 Hi.

CURVES APPLY FOR ANODE
CURRENT RATE OF RISE
5 AMPERES PER MICROSECOND MAXIMUM.
1

CURRENT- AMPERES

AVERAGE FORWARD CURRENT- AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR HALF WAVE RECTIFIED SINE
WAVE OF CURRENT

.(I)
(2)

13)

(4)

FORWARD POWER

DISSIPATION FOR

WAVE RECTIFIED SINE

WAVE OF CURRENT

HALF

FREQUENCY- 50 TO 400HI.
RATINGS APPLY FOR ANODE CURRENT
RATE OF RISE' 5 AMPERES PER
MICROSECOND MAXIMUM.
RATINGS DERIVED FOR 0.5 WATT
AVERAGE GATE POWER DISSIPATION.
I8*C PER WATT MAXIMUM CASE TO
AMBIENT THERMAL RESISTANCE
(3)

1.0

2.0

AVERAGE FORWARD CURRENT

3.0

3.0

4.0

AVERAGE

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

665

CURVES APPLY FOR ANODE

CURRENT RATE OF RISE -5
AMPERES PER MICROSECONDMAXIMUM.
4.0

FORWARD CURRENT- AMPERES

FORWARD POWER DISSIPATION FOR

RECTANGULAR CURRENT WAVEFORM

'

"

C10 SERIES

NOTES:

(I)

(2)

SUGGESTED COOLING FIN DESIGNS. FINAL

DESIGN SHOULD BE CHECKED TO ASSURE

THAT STUD TEMPERATURE DOES NOT

EXCEED VALUE SPECIFIED IN CHART 3
ALL FINS I/I6" THICK COPPER-FINS
PAINTED -STUD MOUNTEO DIRECTLY
TO FIN -MINIMUM FIN SPACING
1

(3)

RESISTIVE OR INDUCTIVE LOAD, 50

TO 400 Hz
COOLING
(4)

JUNCTION TEMPERATURE;65'C
H50"C

INCH.

MINIMUM CURRENT REQUIRED

TO FIRE ALL UNITS AT:

-FREE CONVECTION

+25-C

MAX.

CURVES SHOWN ARE FOR 180 CONDUCTION

ANGLE. FOR OTHER CONDUCTION ANGLES,
MULTIPLY CURRENT SCALE BY THE
FOLLOWING FACTORS:

12

ALLOWABLE
PEAK GATE
VOLTAGE =
10.0 V

DC- 1.40
120" -0.80
90' - 0.70
5

60* -0.60

Xs

30

20

10

GATE CURRENT- MA

SHAOEO AREAS
REPRESENT LOCUS\\
OF POSSIBLE FIRING
POINTS FR0M-65-C
TO + I50'C

\J.

!>>

k'

XV,

fe?

60

^MAXIMUM ALLOWABLE
'
-s.

INSTANTANEOUS GATE
POWER ' 5.0 WATTS

r^

80

100

1.2
08
1.6
2.0
INSTANTANEOUS GATE CURRENT-AMPERES

0.4

120

AMBIENT TEMPERATURE-*C

MAXIMUM FORWARD CURRENT

VS. AMBIENT
TEMPERATURE FOR VARIOUS FIN SIZES

60

-65"C

"

2.4

TRIGGERING CHARACTERISTICS

,-20

C TO

>0<

i 50
CO
Id
a.
HI
0-

-( 5C TO

-20 ^C

'

Z40
<
i

I
u

30

NOT ES:(I ) FOR

:alculat NG
RAT IH GS

C9

(2'.)

or
=
20
'"

CO

2
l

JUNC1 riON TEM >ER A-

INSTANTANEOUS VALUE

TURE PRIOR T OS JR(5E,

-65 C TO 131 c

OF ANODE CURRENT

MUST NEVER EXCEED

TURN-ON CURRENT LIMIT
LINES SHOWN.
(1) DC TO 400 Hz.
TEMPERATURE
(2) CASE

o
IE

-65'C TO +I50'C.
(3)

1.0

2
3
4
5 6 7
PULSE TIME -MILLISECONDS

0.2

8.3

1.5

06 OS

0.4

GATE SUPPLY: 7 VOLTS

OPEN CIRCUIT, 250HMS
RISE TIME-4 MICROSEC0NDS(I0*4T0 90%).
40 60 80100

20

IX)

TIME FROM START OF CURRENT FLOW- MICROSECONDS

MAXIMUM ALLOWABLE NON-RECURRENT

TURN-ON CURRENT

10

LIMIT

SUB-CYCLE SURGE CURRENT RATING

380

NOT ES:

(1)

2)

AT RA re 3 LOAD CONDITIONS
JUNCT ON TEMPERATURE, PRIOR
TOSU :,-65C TO + ISOM

'

,--'

iiiiii

NOTE CURVE DEFINES TEMP RISE OF JUNCTION ABOVE

CASEFC R SINGLE LOAD PULSE OF DURATION 1. PEAK
ALLOWA BLE DISSIPATION IN RlXTIFIER FOR TIME t. F
:

PPEAK. ,50

II

/
5 6 7 8 910
CYCLES AT 80 CPS

11

30

40

C - TC

*J-C(t)

FOR
ENT
INTE

RMITTENT LOADS*
in

ii

5
.2
TIME(t)-SECONDS

90 60

MAXIMUM ALLOWABLE NON-RECURRENT

12

PEAK SURGE FORWARD CURRENT

MAXIMUM TRANSIENT
THERMAL IMPEDANCE

666

linn

ii

SCR

C13
PAGE 322

C11 SERIES SEE 2N1770-8

The General Electric C13 Complementary Silicon Controlled Rectifier (CSCR) is a threeterminal, planar-passivated
device in the standard, low-cost plastic TO-98 JEDEC package. As CSCR's, the C13F and the C13Y offer greater flexibility in circuit design through the
use of the anode gate. The three leads are designatd as anode, anode gate and cathode.

PNPN

DIMENSIONS WITHIN
JEDEC OUTLINE TO-98

Applications

Outstanding Features

Low Level Logic

Memory Circuits

Automotive Switching
SCR Triggering

Planar Passivated Structure

Low Leakage Current

Low Triggering Current
Low Forward Voltage Drop
Low Cost

HOTl 1: Lead diameter is controlled in the

zone between* 070 and .250 from the seating plane.

Between .250 and end

max. of .021

is

of lead a

held.

Ring Counters
Level Detectors
ALL DIMEN. IN INCHES AND ARE
REFERENCE UNLESS TOLERANCED

Fuse Circuits

High Gate Breakdown Voltage

Miniature

Lamp

Drivers

.SCO

SEATING

MIN

PLANE

i_

3 LEADS
017
V"<

+-002

-,ooi

(NOTE

I)

The C13 CSCR operates similarly to the conventional SCR. The major difference is that the device is turned on by forward biasing
the junction between the anode and the anode gate. The voltage on the anode gate is made negative with respect to the voltage on the
anode.
"Conventional" SCR's are turned on by injecting current into the lower p-base (cathode gate), while those that are turned
on through the upper n-base (anode gate) are called "complementary" SCR's. A four-terminal, Silicon Controlled Switch (SCS) has
connections to both bases and either, or both, bases may be used to initiate switching.

MAXIMUM ALLOWABLE RATINGS

Blocking Voltage,

Working and Repetitive

Peak Reverse Voltage,

Non-Repetitive Peak
Reverse Voltage,

Vdwm

Vhwm & Vrbm

(Open Gate)

Vrsm
(Open Gate)

30 volts
50 volts

30 volts
50 volts

Peak Forward
Type*

(Rga

C13Y
C13F

IK)

30 volts
50 volts

*Reverse Blocking Voltage, Vhm (Finite gate resistance)

Continuous Forward Current, I TM
Peak Forward Current, Item (10 ,usec., 1% Duty Cycle, 100C)
Peak Forward Current, Item (100 ^sec, 1% Duty Cycle, 100C)
Peak Forward Surge Current, Itsm (non-repetitive, 5 <usec, 25C)
Peak Forward Gate Current, Igm
Peak Reverse Gate Current, Iom
Peak Reverse Gate Voltage, Vgm

Average Gate Power Dissipation,

When used on AC

3
1

Amperes
Ampere
Amperes

50 Milliamperes
50 Milliamperes
30 Volts
10 Milliwatts

Pgcav,

Storage Temperature, T 5TG

Operating Temperature
Total Power, P T (Derate linearly to

5 Volts

250 Milliamperes

~ 65

t0

-55C

to

+150 C
+100C
450

at 100C)

operation with finite gate resistance, a diode must be added in series with the cathode to absorb the reverse voltage.

667

mW

C13

CHARACTERISTICS
(at

Symbol

Test

Min.

Forward
Blocking
Current

Id

Reverse
Blocking
Current

Ib

Gate Trigger
Current*

Igt

Gate Trigger
Voltage**

Vgt

Forward
Voltage

Vt

Drop
Holding
Current

Ih

Turn-On
Time

25C, unless otherwise noted)

tgt

Max.

Typ.

VD =
VD =

0.10

.01

.001

0.10
/A

.10

100

.05

0.45

0.60

0.25

0.40

1.4

1.8

Ro = IK

rated,

Vr =

rated,

100C

Ta

20

2.0

rated,

Ro = IK,
=
Ta
100C
V R = rated, Open Gate

100

0.10

Test Conditions

Units

Open Gate,

Vd =

6 volts,

RL =

100 ohms

VD =

6 volts,

RL =

100 ohms,

T A = -55C

VD =

6 volts,

Rl = 100 ohms

VD =

6 volts,

RL =

Volts

1.4

0.70

0.42

mA

0.10

IT

= 250mA

IT

250

mA, Ta = 100C

R G = IK
Ro = IK, Ta = 100C
see Circuit

see Circuit

/usee

Recovery

Trp

Time

10

*Iot measured using c urrent source. **Vgt measured using volta are source.

ssoa
4-^WV

3.

TV

^sec
500
oopps

ikA

V-v
Ar)

vV

-20

TURN -ON TIME

CIRCUIT

100 ohms,

Ta = 100C

RECOVERY TIME

CIRCUIT B

I
668

C13

't

250 MA

It '

200 MA

6VC)LTS
Rl I00 A

it

IOOMA

il.2

g
.It- SOMA

gio

^It 10 MA

-25

AMBIENT

+25
+50
TEMPERATURE- "C

+75

-50

+25

+50

+75

+I00

+I25

+I50

AMBIENT TEMPERATURE -*C

TYPICAL GATE TRIGGER CURRENT

AMBIENT TEMPERATURE

1.

-75

vs.

2.

TYPICAL FORWARD BLOCKING VOLTAGE

AND ANODE CURRENT

vs.

AMBIENT

TEMPERATURE

1Z00

1000

4.
1

H 800

z
til

IE
<r

S.4

fiOO

-1

o
X

Ik

JHMS

400

- .3

V D 6V0LTS

Rl-

o
IE
<

| 200

-50

-75

3.

+50
+25
AMBIENT TEMPERATURE-'C

-25

+75

-75

+100

FORWARD HOLDING CURRENT

AMBIENT TEMPERATURE

TYPICAL
vs.

4.

669

-50

-25
+50
+25
AMBIENT TEMPERATURE -*C

+ 75

TYPICAL GATE TRIGGER VOLTAGE

AMBIENT TEMPERATURE

+100

vs.

C13

APPLICATIONS

INITIATE

2.2k

TIME DELAY 40-60 SECS WITH COMPONENTS

SHOWN
C13 DOUBLES AS TIMING THRESHOLD

AND LOAD

DRIVER

This circuit is an interesting twist in timers. Here the C13 is used as both the sensitive timing element and the load driver. Power is
applied to the circuit with the initiate switch open circuited. The 25/xF capacitor charges through the A14 diode and 2.2K resistor to
full supply voltage. When the initiate switch is closed, the "low" side of the capacitor is suddenly
raised to +12. This raises the diode
side of the capacitor to approximately +24. The capacitor immediately begins discharging through the 1 meg in series with 3.3 megs.
Eventually, the C13 gate becomes forward biased and the device turns on thereby applying power to the relay. The delay is virtually

independent of supply voltage.

+E

_TL
40

-+E

M SEC

,D29A4

.1/xF

Ik*

Ik

:lk

3N84T

CI3

Ik

Tci3

10k

C I3

IN4I48
10k

^jv.05

^jn.05

^-t-n.05

2N34I5

X^

<470a

LOW COST RING COUNTER

C13's can also be used for ordinary thyristor applications. This ring counter makes an
resetting via the first stage 3N84. As many stages as desired may be cascaded.

670

efficient,

low cost circuit featuring automatic

'

C15 SERIES

SCR

The General Electric C15 Series Silicon Controlled Rectifier is a reverse blocking triode
thyristor semiconductor device for use in power switching and phase control applications requiring blocking voltages up to 600 volts, and
load currents up to 8.0

RMS

amperes.
This series device

is

particularly suitable for high-volume, consumer /industrial applica-

tions.

The following

G. E. Co., low-current

SCR types

are also available in the same package

outline

CIO (2N1770A-2N1777A)
(Pub. #150.20)Tj = 150C, up to 400V
(JAN Types 2N1770A-2N1777A to MIL-S-19500/168B also available)
Cll (2N1770-2N1778, 2N2619)
(Pub. #150.21)Tj = 125C, up to 600V

PRV
PRV

MAXIMUM ALLOWABLE RATINGS

TYPE

PEAK FORWARD M.OCKB&

VOITAGE, Won
To =s

-* .+**C;-"

PEAK FORWARD VOITAOE,

,.-

jfo-ss.-i^i'ciD+jeR'c

':';;

WORJUN9 AND PSTtTlV6

PEAK REVERSE VOLTAGE
Vwut (wk) ami Vsdm (wp) 0)

NON-REPETITIVE PEAK
REVERSE VOLTAGE,
Vsou (onnp)
Mfflboc}
>
"fo>:~*$' COr|-1< 'C

<

C15U
C15F
C15A
C15G
C15B
C15C

C15D
C15E

C15M
(1)

480
480
480
480
480
480
480
600
720

25 volts
50 volts
100 volts
150 volts
200 volts
300 volts
400 volts
500 volts
600 volts

25
50
100
150
200
300
400
500
600

volts
volts
volts
volts

volts
volts
volts
volts
volts

40 volts
75 volts
150 volts
220 volts
300 volts
400 volts
500 volts
600 volts
720 volts

volts
volts

volts
volts
volts

volts
volts
volts

volts

Values apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which
maximum V F om and V RO m ratings apply equals 18 C per watt.

RMS

Forward Current, On-State

Average Forward Current, On-State-

.3.0

5.0

Peak One Cycle Surge Forward Current, I FM (surge).

Pt (for fusing)
Peak Gate Power Dissipation, Pgm
Average Gate Power Dissipation, P Q (AV).
Peak Reverse Gate Voltage, Vgrm

8.0 amperes (all conduction angles)

amperes at 75 C case (half-wave rectified)
amperes at 75C case (full-wave rectified)
(See Charts 3 and 5)
60 amperes
.(Calculate from Chart 8)

5 watts

0.5 watts

10 volts

Storage Temperature, T stg

Operating Temperature, Tj
Stud Torque

-65C
-65C
_151b-in

671

to
to

+150C
+105C

(17kg-cm)

CHARACTERISTICS

C15

^^^^^^^B^^l^*, >:
PEAK REVERSE OR
FORWARD BLOCKING
CURRENT'

1'

SYMBO*

JK*tlN.".'-

in SPi

Irom
or
Ifom

mA

C15U
C15P
C15A
C15G
C15B

GATE TRIGGER CURRENT

mAdc
mAdc

25

Igt

50

GATE TRIGGER VOLTAGE

Vot

Vdc

2.5

Vdc

0.3

PEAK ON-VOLTAGE

Vfh

HOLDING CURRENT

Iho

1.85

mA

30

C/watt

3.1

'"Values apply for zero or negative gate voltage only.

Vfom- and Vbom ratings apply equals 18C/watt.

.-.-'-

-rTW'CoiwMTioNs

-65cto-i-i05c

= Vfom = 25V Peak

= Vfom = 50V Peak
= Vfom = 100V Peak
= Vfom = 150V Peak
= Vfom = 200V Peak
= Vfom = 300V Peak
= Vfom = 400V Peak
= Vfom = 500V Peak
= Vfom = 600V Peak
Tc = +25C, Vfx 6 Vdc, Rl = 125 ohms
To = -65 C, Vfx = 6 Vdc, Rl = 125 ohms
To = -65C to +105 C, Vfx = 6 Vdc,
R L = 125 ohms
To = +105C, Vfxm = Rated Vfom, Rl = 250 ohms
To = +25C, Ifm = 15A Peak, 1 millisecond wide

Maximum

Duty

cycle

gl%.

To = +25C, Anode supply = 24 Vdc, Gate

Supply = 7V, 20 ohms. Initial forward current
pulse
wide.

0j-c

:--

Tc=

pulse.

EFFECTIVE THERMAL
RESISTANCE (DC)

Vbom
Vbom
Vbom
Vbom
Vbom
Vbom
Vbom
Vbom
Vbom

9.0
9.0
9.0
8.0
6.0
4.0
2.0
2.0
2.0

C15C
C15D
C15E
C15M

'0jj$zt.?.'y'

0.5A, 0.1 millisecond to 10 milliseconds

Junction to case.

case to ambient thermal resistance for which

maximum

OUTLINE DRAWING
(Complies with JEDEC registered TO-64 outline)

N
B

0T-i

T
0D

TERM.2
He(CATHODE)

N,

iTERM
3(ANODE)

TT

TERM.
(GATE)

hB

-0T

10-32 STEEL NUT

CADMIUM PLATED

LOCKWASHER,
CADMIUM PLATED
STEEL

(2)
(3)

(4)
(5)
(6)

(7)
(8)

.300

.400

7.62

.080

.136

2.03

00

NOTES:
(1)

Contour and orientation of fixed terminal lugs

are optional.
The outline contour (with exception of hexagon)
is optional within zone defined by 0D and J.
Minimum diameter of seating plane.
A chamfer (or undercut) on one or both ends
of hexagonal portion is optional.
Minimum difference in terminal lengths to
establish datum line for numbering terminals.
Pitch diameterthread 10-32 NF-2A (Coated).
Reference (Screw Thread Standards for Federal
Services 1957) Handbook 1957 H28.
Minimum spacing between terminals.
Insulating kit available upon request.

.424

0D,

.400

.424

3.45

10.77

10.16
.437

10.77

3,4
11.10

.013

.330

et

.060

1.52

.060

.175

1.52

4.45

.700

.855

17.78

21.72

<j>M

.163

.189

4.14

4.80

.400

.453

10.16

11.51

N,

672

10.16

.078

1.98

.040

.075

1.02

1.91

*W

.1658

.1697

4.212

4.3K

C15
ioo

1000

800
600

400
IO

<
JUNC" noN
= 105

200

c\
25 "C

|%I05*C JUNCTION

TEMPERATURE

+ 25C JUNCTION

TEMPERATURE

a.

t
o
a.

100

80
IE

o
60

z
<
0.I

40

z
<

_L_
\
0.5

'

INCREASES TO FORWARD BREAK-

20

OVER VOLTAGE

1.0

2.0

1.5

3.0

2.5

3.5

4.0

4.5

INSTANTANEOUS ON -VOLTAGE - VOLTS

MAXIMUM FORWARD CHARACTERISTICS

0.

ON-STATE

INSTANTANEOUS ON-

10

VOLTAGE- VOLTS

MAXIMUM FORWARD

CHARACTERISTICS,

HIGH CURRENT LEVELON-STATE

II
I

notes:
(2)

resistive or inductive load, 50 to 400 hz.

ratin6s derived for 0.3 watt average gate

(3)

power dissipation.
1/2" is minimum
l/2"x

(i)

3 40
<

(4)

fin size for which ratings

apply (i8c per watt max. thermal resistance
case to ambient ).
ratings apply for anode current rate of rise"
5 amperes per microsecond maximum.
i

AVERAGE

AVERAGE FORWARD CURRENT -AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

WAVE RECTIFIED SINE WAVE OF CURRENT

FORWARD CURRENT -AMPERES

FORWARD POWER

DISSIPATION FOR HALF

RECTIFIED SINE

HALF

673

WAVE OF CURRENT

I
WAVE

C15

(1)
(2)

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hi.

1/2" X
1/2" IS MINIMUM
FIN SIZE FOR WHICH RATINGS APPLY. (I8*C
HERMAL RESISTANCE CASE TO AMBIENT).
NOUCTION ANGLE IS THE TOTAL TIME OF CONDUCTION.
IE EXAMPLE TO THE LEFT 120* CONDUCTION IS ILLUSTRATED BY THE TOTAL SHADED AREA.
(4) RATINGS DERIVED FOR 0.9 WATT AVERAGE GATE POWER DISSIPATION.
OPERATION RE(5) PROPER
OUIRES SPECIAL APP240*-~^|
"T^^ LICATION PRECATIONS.
16) RATINGS APPLY FOR ANODE CURRENT
RATE OF RISE -5 AMPERES FOR
i

MICROSECOND

120

notes:

(3)

MAXIMUM.

300 360

180

OF SUPPLY,
CYCLE
FREQUENCY ~H
I

) FREQUENCY 50 TO 400 Hz.

JUNCTION TEMPERATURE = I05C.

(2)

"(4)

THE CONDUCTION ANGLE IS THE

TOTAL TIME OF CONDUCTION. IN THE
EXAMPLE SHOWN TO THE UPPER
LEFT, 120 CONDUCTION IS ILLUSTRATED BY THE TOTAL SHADED ARE,
CURVES APPLY FOR ANODE CURREN1
RATE OF RISE =5 AMPERES PER
MICROSECOND MAXIMUM.

AVERAGE FORWARD CURRENT-AMPERES

AVERAGE FORWARD CURRENT- AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

FULL WAVE RECTIFIED SINE WAVE OF CURRENT

FORWARD POWER
FULL

WAVE

DISSIPATION FOR

RECTIFIED SINE

WAVE

OF CURRENT
60

50

UJ
tc
UJ
o.

2 40
<
i

tr
Sj

30

NOTES

:(l)

UJ

o
or
=

(2)

20

FOR CALCULATING 2
RATINGS
JUNCTION TEMPERATURE, PRIOR TO SUR6E,
-65C TO 105 C
!

o
or

t
10
u.

2
3
4
5 6 7
PULSE TIME -MILLISECONDS

1.5

1.0

Q5

1.6

INSTANTANEOUS

MAXIMUM ALLOWABLE NON-RECURRENT

1.5

GATE CURRENT -AMPERES

SUB-CYCLE SURGE CURRENT RATING

TRIGGERING CHARACTERISTICS

3 80
NOT ES:

'MINI
(1)

2)

RATED LOAD CONDITIONS

JUNCTION TEMPERATURE, PRIOR
TO SURGE, -65'C TO + I05C

'

--' T

llllll

NOTE CURVE DEFINES TEMP RISE OF JUNCTION ABOVE

CASE FOR SINGLE LOAD PULSE OF DURATION t. PEAK
ALLOWABLE DISSIPATION IN RECTIFIER FOR TIME f, F
:

TjlMINUS MAXIMUM CASE TEMP, DIVIDED 8Y THE

P

II

AT

56789

S
10

30

40

- TC
PEAK.!05#C

ITLEO 'POWER SEMICONDUCTOR RATINGS UNDER TRANtlENT AND

INTE RMITTENT LOADS."
1

f)

50 60

[I
;i

Mill

CYCLES AT 60 CPS
TIME (t)- SECONDS

8.3

MAXIMUM ALLOWABLE NON-RECURRENT PEAK

10

SURGE FORWARD CURRENT

674

MAXIMUM TRANSIENT THERMAL IMPEDANCE

II

Controlled

Rectifier
35A RMS max.

No Peak Forward Voltage Limitation

Broad Voltage Range-Up

Volt

to

RMS Applications)

Up

to

800 Volts

Standard TO-48 Outline

700V (400

Designed to Meet MIL-S-19500/108D

Backed by 20 Years of Design and Field

Experience
OUTLINE DRAWING
(COMPLIES WITH JEDEC TO

481

NC

(COMPLIES WITH JEDEC TO-48)

mum.
2.

undmd
UNF-2A. Maiimum

l.imlnoli
3

'4-2B

MIN

SYMBOL

.220'' |J 59WM)
Mm.
aIMJ nlotion of

Anoulo.

M.

MILUMEIEB5

NOTES

330

i0?

38

I2.B3

I*

.Mi

140

02

3. it.

.*,

.210

33

l>

nO

JO0

362

.113

200

.DcO

F,

13

az

2.87
I

'.62

13.82

j-JJ

5JJ

1J

27

OK

m
a

52

M M
a-~

J|

2? 23
3.04

Croliono
Small

,-M

him

J?2

4-,j

.0ao

o.--,

i?:.

103

01

10 72
I

i2
IB

llii
1

'

91
l

*t

C.

Mica washer

0C/W

in insulating kit

adds

junction-to-heatsink.

MAXIMUM ALLOWABLE RATINGS

TYPEt

PEAK FORWARD
BLOCKING VOLTAGE Vmit
To = -65C to +J25"C

C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E
C35M
C35S

25
50
100
150

200
250
300
400
500
600
700

REPETITIVE PEAK REVERSE

VOLTAGE Vkoh (rap)*

Tc = -65 C to +123C
<>

25
50
100
150
200
250
300
400
500
600
700

Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts

*Values apply for zero or negative gate voltage only.

Vpom and Vhom ratings apply equals llC/watt.
fDevices are marked as indicated in this column.

RMS

Forward Current, On-State

Ayerage Forward Current, On-StatePeak One-cycle Surge Forward Current, I PM
Pt (for fusing)
Peak Gate Power Dissipation, P GM
Average Gate Power Dissipation, P G (av>Peak Reverse Gate Voltage, V GRJ

Maximum

Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts

NON-REPETITIVE PEAK REVERSE

Vmw tap****)*

VOLTAGE S.O MflUSEC)

To

= -M'Cto + W5*C
35 Volts
75 Volts
150 Volts
225 Volts
300 Volts
350 Volts
400 Volts
500 Volts
600 Volts
720 Volts
840 Volts

case to ambient thermal resistance for which

maximum

35 amperes (all conduction angles)

-Depends on conduction angle (see Chart 3, 5, and 7)
.225 amperes
(surge).
2
milliseconds)
times
1.5
seconds
(for
_75 ampere
5 watts
_0.5 watts

__5

-65C
-65C

Storage Temperature, T stK

Operating Temperature, Tj
Stud Torque
Turn-On Current Limit-

to

volts

+150C
+125C

to
_30 lb.-inch, (35 kg-cm)
See Chart 11

675

CHARACTERISTICS

C35

5125

I*^^^^^'^^^Ep':*m.^Si i$^2 ^'^S

!

PEAK REVERSE OR
CURRENTf

FORWARD BLOCKING

;,

^W^Wf^KfH0f^x^y^f h -

"'.'

I ROM

or

To = -65C to +125C
Vbom = Vfom= 25V Peak

mA

Ifom

C35U
C35F
C35A
C35G

13.0
13.0
13.0
13.0
12.0
11.0
10.0
8.0
6.0
5.0

C35B

C35H
C35C
C35D
C35E

C35M
C35S

FULL CYCLE AVG.

REVERSE OR FORWARD
BLOCKING CURRENTf

3Sf flffcv

= 50V
= 100 V
= 150 V
= 200V
= 250V
= 300V
= 400V
= 500V
= 600V
= 700V

4.5

IrX

(AV)

or
Ifx

C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E

C35M

6.5
6.5
6.5
6.5
6.0
5.5
5.0
4.0
3.0
2.5

C35S

2.25

GATE TRIGGER CURRENT

Igt

GATE TRIGGER VOLTAGE

Vgt

mAdc
mAdc

40
80

Vdc
Vdc

3.0

0.25

PEAK ON-VOLTAGE

HOLDING CURRENT

Iho

CRITICAL RATE OF
RISE OF FORWARD

dv/dt

= +65C, Io = 16A
V RXM = Vpxm = 25V Peak
= 50V
= 100V
= 150V
= 200V
= 250V
= 300V
= 400V
= 500V
= 600V
= 700V
Tc

mA

(AV)

2.0

180 Conduction Angle

= +25C, Vfx = 12 Vdc, R,. = 50 ohms

= -65C, Vfx = 12 Vdc, Rl = 50 ohms
Tc = -65C to 125C, Vpx = 12 Vdc, R L = 50 ohms
T c = +125C, Vpxm = Rated Vfom, Rl = 1000 ohms
To = +25C, I = 50A Peak, 1 millisecond wide
Tc
To

pulse

mAdc

100

Tc = +25C, Anode supply = 24 Vdc, Gate

Supply = 10V, 20 ohms, 45 ,usec min. pulse width.
Initial forward current pulse = 0.5A, 0.1 millisecond to 10 milliseconds wide.
Tc - +125C.
Gate open circuited.
Vfom Rated.

V//isec.

BLOCKING VOLTAGE

(Higher values may cause

device switching)

C35U
C35F
C35A
C35G
C35B
C35H
C35C
C35D
C35E
C35M

10
10
20
20
20
20
25
25
25
10
10

C35S

CIRCUIT

COMMUTATED

TURN-OFF TIME

Tc
toff

75

iisec.

125C, Rectangular current waveform. Rate

Rate of fall of

of rise of current <10A//isec.

current
5A//isec.

Ifm

10A

Hz. Vhxm

(50 jitsec pulse). Repetition rate

60
Rated. Reverse voltage at end of
V Kx
15V.
Rated.

turn-off time interval

V =

Rate of rise of reapplied forward voltage = 10V/

Msec (C35U, C35F, C35M, C35S). Rate of
rise of reapplied forward voltage 20V/jusec
(C35A, C35G, C35B, C35H, C35C, C35D, C35E).
Gate bias =
Volts, 100 ohms (during turnoff

interval).

EFFECTIVE THERMAL
RESISTANCE (DC)

0J-C

1.7

C/watt

Maximum
Vfom and Vbom ratings apply equals llC/watt.

676

case to ambient thermal resistance for which

maximum

C35
800
700
100

so

900

so

JUNCTION

300

TEMPERATURE-

28 "CLU
IE

UJ

10

<

8.0
6.0

I"

(5
IE
IE

3
u

zz
/
JUNCJTION
TEM ERATURE- 25C

h
H

'00

*>

60

so
w 70

5*C

/
t:
[Z

i 40
30

20

.10

OS

.06

\
\

v
f

TO FORWAF D

INCRE ASES

INSTANTANEOUS ON-VOLTAOE VOLTS

0.S

1.0

2.0

1.5

3.0

2.5

MAXIMUM FORWARD CHARACTERISTICS-

2.

INSTANTANEOUS ON-VOLTAGE VOLTS

ON-STATE

HIGH CURRENT LEVEL

1.

MAXIMUM FORWARD CHARACTERISTICSON-STATE

DC

a.

j xp J

(I)

I
w

RESISTIVE

OR

INDUCTIVE LOAD, 30 TO 400MI

RESISTANCE CASE TO AMBIENT

a.

'

(\

'

SATE POWER DISSIPATION

/

RATE OF RISE

MPERES PER MICRO-

10 A

Ill

180*
\

0*

bo*

ANSlV^
90-

c ONOUCTIO N

E-3C

I
o

*\

\
90"

120!i_

so*

CONDUCTION

'

M 6LE- 50*

0-

"
L co NDUCTION
i

vj

icr

A y

'

/ y Y-

NSLE
i

NOTES

(1}

(3)

20
C
1

3
2

JUNCTION TEMPERATURE *I25*C

CURVES APPLY FOR ANODE

CURRENT RATE OF RISE* 10
AMPERES PER iSEC MAX

AVERAGE FORWARD CURRENT -AMPERES

AVERAGE FORWARD CURRENTAMPERES

3.

4.

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

NOTES:

FREOUENCY

(1)

50 TO +00 Hz

'

140

OF RISE

RATE

AMPERES PER

10

g
(3)

l2

100

V^

3 so
i

3
4
40
S
20

CYCLE

"

0.5 WATT
DISSIPATION.

RESISTANCE

AMBIENT.

sV

at

OOTT

AVERAGE GATE POWER

RATINGS

8.3

CASE

m
2

TO

^
s

16.7%

"V

23%

1
t
i

-i

V,

3 3.1%

"A

OUTY CYCLE

lllli

10

12

AVERAGE FORWARD
5.

DERIVED FOR

14

CURRENT

16

18

20

22

24

26

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR RECTANGULAR CURRENT WAVEFORM

677

FIN SIZE

C35

j"\
3"

/SOT

K5"v

RESISTIVE OR INDUCTIVE LOAD, 50 TO

NOTES: U)

\\

400 Ml

FREE CONVECTION COOLING

CURVES SHOWN ARE FOR 180* CONDUCTION ANGLE
FOR OTHER CONDUCTION ANGLES, MULTIPLY CURRENT
VALUES BY FOLLOWING FACTORS.
I20*-0.9I

(2)

90" -0.82
60'-0.72
33 3%

W-0.98
4"X4"^

USE CURVES FOR DC,li,3#, 6* CIRCUITS BY CHOOSING

PROPER CONDUCTION ANGLE FACTOR
CHART 3 CURVES ARE LIMITING.
ALL FINS 1/16" THICK COPPER WITH EMISSMTY 90%
STUD MOUNTED DIRECTLY TO COPPER FIN, MINIMUM
FIN SPACING -3/4"

Z5%3}

16.7%

DUTY CYCLE

8.3%

3"X

t!Y___
~~- ~~.~

-1
/,

ss

6?

7 <>
^&

V/,

/
/

3'^

UHIOOJ

ES^

5/

(1)

TEMPERATURE

JUNCTION

(3)

I25"C

CURVES APPLY FOR ANODE

10 AMPERES

PER MICROSECOND

MAXIMUM

^
AMBIENT TEMPERATURE- *C

AVERAGE

6.

CURRENT

FORWARD

AMPERES

FORWARD POWER DISSIPATION

7.

MAXIMUM FORWARD CURRENT

AMBIENT TEMPERATURE

VS.

FOR VARIOUS

FOR RECTANGULAR CURRENT WAVEFORM

FIN SIZES

MIN.GA.TE CURRENT REQUIRED TO

TRIGGER ALL UNITS AT
+ 25C -65 e C

65C

t-

w u

MIN GATE VOLTAGE

REQUIRED

TO

note: junction temperature immediately

prior to surge -65c t0+iz5*c

120

* <

TRIGGER ALL
UNITS

^l
</>
.

ioo

UJ

E 80

MAX. GATE VOLTAGE

THAT WILL NOT
TRIGGER ANY UNITS
AT I25*C .0.25 V
I

50

AjNSTANTANEOUS GATE CURRENT

.
.

100

MA

MAX. ALLOWABLE INSTANTANEOUS

GATE POWER DISSIPATION

5.0

WATTS

CYCLES AT 60
9.

20

10
Hi

MAXIMUM ALLOWABLE NON-RECURRENT PEAK SURGE

FORWARD CURRENT AT RATED LOAD CONDITIONS

NOTES:(l)CASE TEMP --65*C TO +I25-C

(2)

SHADED AREAS REPRESENT LOCUS

OF POSSIBLE TRIGGERING POINTS

FROM-65'C TO+lgS'C,

600

GATE CURRENT - AMPERES

INSTANTANEOUS

'

u
a.
8.

4
H
z

GATE TRIGGERING CHARACTERISTICS

4>z

20O

S^

UJ

a
a:

f> /

60

40

*/

.to cm

CTBN

ABOVE CAM TEMPERATURE FOR

WLE LOAO PULSE OF DURATION t. PC*
jOWMLE dissipation in sot, for tiw
t. ITARTM8 FROM CASE TEMPERATURE
JALS ISS'C (MAX TjI MINUS CASE
Til IfPERATURE DTVIDCD BY THE TRANSm

*r

'

. J _ c(t)

rTT

'-

NO TES
(

IN 5TA

CU RR

<

/
'

&

*/

~^r~
/

>t

CD

Jyjy

[<&

eo

i
S

s
1

*IEOU"

MU

>T

VALUE
F ai ODE
NEVER EXCE ED

SHOWN.
DC TO 400 Hi

(J
('I)

GATE

SUPPLY: 7 VOLTS OPEN

OHMS; RISE TIME

CIRCUIT, 80

~r

MTIMM AND FUmt

HPomuTKM, see nmuutncm too.* sum

(2) rot

r~

OPTIMUN

OR iwrmat under
TW UIS1ENT AND WTC RMITTENT IAUS".
'pi

04

]]
J]
1

0.6

08

TIME FROM

IO

START

OF

10

JJ

TINE III- SECONDS

10.

MAXIMUM TRANSIENT THERMAL IMPEDANCEJUNCTION TO CASE

11.

678

20

40

CURRENT FLOW- MICROSECONDS

TURN-ON CURRENT

LIMIT

60 80

CO

C36 SERIES SEE PAGE 328

C37

SCR
800 Volts 25 A. RMS Max.

05 C Max. Case Temperature

The C37 Silicon Controlled Rectifier is a three-junction semiconductor device for

use in power switching and control applications requiring a blocking voltage of
800 volts or less and average load currents up to 16 amperes. Its low cost makes it
suitable for high volume consumer/industrial applications.

An

ideal inexpensive trigger device for this Controlled Rectifier is

a Silicon Uni-

junction transistor, such as type 2N2647.

MAXIMUM ALLOWABLE RATINGS

'

/;-

"w,.-

'-rwfc>r0iiw*i&mo<k&sli WftX PORWAftD VOLTA6I*

.:-'

VOjLTAOf,

''i,

PFV

&%!$$& $$&&&%'* rfc*a**fk_

P?_i

C37U
C37P
C37A
C37B
C37C
C37D
C37E

REPETITIVE PEAK REVERSE

NON-Rf PSTtTIVE PtAK REVERSE

VOLTAGE, Vwm<rp) <u

40C Mr 4-MB'C
jfo

VOLTAGE, Vgon (M-) n>

'

> fa

5^*4'cf +*os*e
40 volts

25 volts

480 volts

25 volts

50 volts

480 volts

50 volts

75 volts

100 volts

480 volts

100 volts

150 volts

200 volts

480 volts

200 volts

300 volts

300 volts

480 volts

300 volts

400 volts

400 volts

500 volts

400 volts

500 volts

500 volts

600 volts

500 volts

600 volts

C37M

600 volts

720 volts

600 volts

720 volts

C37S

700 volts

840 volts

700 volts

840 volts

C37N

800 volts

960 volts

800 volts

960 volts

'"Values apply for zero or negative gate voltage only.

and Vbom ratings apply equals 11 C per watt.

Maximum

case to ambient thermal resistance for which

RMS Forward Current, On-State

.-

maximum V F om

25 amperes

_Depends on conduction angle (See Charts 3 and 5)

Average Forward Current, On-State

Peak One Cycle Surge Forward Current, I FM (surge).

Pt (for fusing)

_125 amperes
2

_40 ampere seconds (for times =21.5 milliseconds)

Peak Gate Power Dissipation, P G m_

5.0

watts

Average Gate Power Dissipation, P G (AV).

0.5

watts

Peak Reverse Gate Voltage,

Storage Temperature,

V G rm

10 volts

_40Cto+105C
_40C to +105C

T 8tK

Operating Temperature, Tj

30 inch-pounds

Stud Torque

(35 kg-cm)

679

CHARACTERISTICS

C37
'-*.-"""':.'

-wr

"'*-'

'

-^ :f*sy* &Jp*!$

PEAK FORWARD OR
REVERSE BLOCKING

*v

-*|fe

Ifom
or Irom

ma

..

'I&mpv* TWf*^iffiMiiiffrttfiitf^^i"*"^

:'"'*' ~'

^"^^^^r*

^r^-

= 40 C to +105

CURRENT"'
C37U
C37F
C37A
C37B

Vfom
Vfom
Vpom
Vfom
Vfom
Vfom
Vfom
Vfom
Vfom
Vfom

13.0
13.0
13.0
12.0
10.0

C37C
C37D
C37E

8.0
6.0
5.0
4.5
4.0

C37M
C37S

C37N

PULL CYCLE AVERAGE

FORWARD OR REVERSE

Ifx(av>

To

or

BLOCKING CURRENT'"

ma

Irxcav)

C37U

C37M
C37S

Vfxm
Vfxm
Vfxm
Vfxm
Vfxm
Vfxm
Vfxm
Vfxm
Vfxm
Vfxm

2.25
2.0

C37N
<3*%E TJtf&SER

CURRENT

Biiliili

^fe$$ A-^'^
kj3fifc%

GATE TRIGGER VOLTAGE

Vox

fKLO'^
*WM>

;-;..,

= Vrxm = 25 Volts Peak

= Vrxm = 50 Volts Peak
= Vrxm = 100 Volts Peak
= Vrxm = 200 Volts Peak
= Vrxm = 300 Volts Peak
= Vrxm = 400 Volts Peak
= Vrxm = 500 Volts Peak
= Vrxm = 600 Volts Peak
= Vrxm = 700 Volts Peak
= Vrxm = 800 Volts Peak

'}r^^^>$& aV^ si'^sp^^^il^^

i&)A&k ^'WrptO

G, 'V&&.3& Vdfc Rl. ss

IM^ftwsi^i^^

3.5

Vdc

To

= -40C to 105C, Vfx =

0.25

Vdc

To

= +105C, Vfxm = Rated Vfom, Rl = 1000 ohms

12 Vdc, Rl

= 50 ohms

PEAK ON-VOLTAGE

= +60C, I = 11.0 Amperes

180 Conduction Angle

6.5
6.5
6.5
6.0
5.0
4.0
3.0
2.5

C37F
C37A
C37B
C37C
C37D
C37E

= Vrom = 25 Volts Peak

= Veom 50 Volts Peak
= Vrom = 100 Volts Peak
= Vrom = 200 Volts Peak
= Vrom = 300 Volts Peak
Vrom = 400 Volts Peak
= Vrom = 500 Volts Peak
= Vrom = 600 Volts Peak
= Vrom = 700 Volts Peak
= Vrom = 800 Volts Peak

2.26

'D'SatfiT'"'

* = +zro;irt=^wpiS^^

'"Values apply for zero or negative gate voltage only.

Vrom ratings apply equals 11 C per watt.

Maximum

case to ambient thermal resistance for which

maximum Vfom and

NOTE:

For applications where the rate of anode current rise (di/dt) exceeds 10 amperes per microsecond, please contact your Local
G-E Sales Representative for component selection.

OUTLINE DRAWING
(COMPLIES WITH JEOEC TO-48)
NOTES:
1. Complete threads

to

extend

to

within 2Vi threads of seating

plane. Diameter of unthreaded
portion .249" (6.32MM) Maxi-

mum,
2.

3.

(COMPLIES WITH JEDEC TO-48)

.220" (5.59MM) Minimum.

Angular

orientation of these
terminals is undefined.
14-28 UNF-2A. Maximum pitch
diameter of plated threads shall
be basic pitch diameter .2268"

(5.76MM), minimum pitch diameter .2225" (5.66MM), reference:

screw thread standards for Federal

Service

1957,

SEE NOTES
3,4

r-

A chamfer

85

5.

Case

is

6.

Large terminal

optional.
anode connection.
is

Small terminal

is

MAX.

8.38

12.83

NOTES

.115

.140

2.92

3.56

.210

.300

5.33

7.62

13.82

.544

.544

.562

13.82

14.27

.113

.200

2.87

5.08

.060

1.52

1.1*3

30. 30

22.23

.875

J
l

<S>

cathode con-

nection.
7.

.505

0b

on one
or both ends of hexagonal poris

330

MILLIMETERS

MIN.

Ob,

Handbook

(or undercut)

tions

INCHES
MIN. MAX.

6D

H28, 1957, PI.

4.

SYMBOL
A

gate connec-

tion.

SEE NOTES

8. Insulating kit available upon request.

A. 14-28 steel nut, Ni. plated, .178
min. thk.
B. Ext.
tooth lockwasher,
steel Ni. plated, .023 min. thk.

680

8 7

.120

3.05

OM
N

.422

ot

.060

.075

1.52

1.91

ot,

.125

.165

3.18

4.19

.453

10.72

11 .51

C37
200
100

80
40
JUNCTION

TEM PERATURE- I05C20

ff*- 25"C

10

8.0
6.0

Q
u

a.

2.0

Mi

%
Q.
o
i

-f'
f

/
lj

0.4

<

0.2

ID

S
a.

\-|

0.1

t-

.08

.06

20

16

12

24

28

AVERAGE

\ ,""
\
\

FORWARD CURRENT- AMPERES

INCREASES TO

BREAKOVER VOLTAGE

'

MAXIMUM POWER DISSIPATION FOR

WAVE RECTIFIED SINE WAVE OF CURRENT

2.

HALF
3

INSTANTANEOUS

1.

ON -VOLTAGE -VOLTS

MAXIMUM FORWARD

CHARACTERISTICS,

CONDUCTING STATE

120

NOTE

60*

12)

ANGLE IS THE TC TAL TIME

OF CONDUCTION. IN THE EXAMPLE BELOW
120* CONDUCTION IS ILLUSTRATED ST
THE TOTAL SHADED ARC*'

THE CONDUCTION

240

180*

^nr\k

120

120 ISO
300 36()
KlCYC LE OF SUPPLY *1

FREQUENCY
;

NGLE

16
4

AVERAGE
I.

12

FORWARD

16

20

24

AVERAGE

FORWARD

10

CURRENT

12

14

AMPERES

CURRENT -AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

WAVE RECTIFIED SINE WAVE OF CURRENT

4.

HALF

MAXIMUM FORWARD POWER DISSIPATION FOR

WAVE RECTIFIED SINE WAVE OF CURRENT

FULL

681

C37

'

'

TEMPERATURE -tO*C TO +I05"C

GATE CURRENT REQ'D TO
r MIN.

16

TRIGGER ALL UNITS

AT-.

jr-40"C

14

O
>
111

\Z\
;S)

'

<

&|

100

12

'

OR INDUCTIVE LOAD, 50 TO 400 CPS

(PROPER OPERATION REQUIRES SPECIAL APPLICATION PRECAUTIONS 1
RATINGS DERIVED FOR 0.5 WATTS AVERAGE
GATE POWER
3"X3" IS MINIMUM FIN SIZE FOR WHICH RATINGS APPLY lll'C PER
WATT MAXIMUM THERMAL RESISTANCE CASE TO AMBIENT
THE CONDUCTION AMPLE IS THE TOTAL TIME OF CONDUCTION
IN THE
EXAMPLE AT THE LEFT 120* CONDUCTION IS JLLUSTBATED
Br THE
TOTAL SHADED AREA
RESISTIVE

>
MAX. GATE VOLTAGE

THAT

WILL NOT TRIGGER ANY UNITS

AT +105 C = 0. 25 VOLTS

<

'0

50

SHADED AREA REPRESENTS

LOCUS OF POSSIBLE TRIGGERING
POINTS FROM -40C TO +I05C

UJ

.1

150
200
CURRENT- MILLIAMPERES

100

INSTANTANEOUS GATE

<n

MAX. ALLOWABLE
INSTANTANEOUS GATE

POWER

DISSIPATION

5.0
AVERAGE

5.

FORWARD

WATTS

CURRENT - AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

WAVE RECTIFIED SINE WAVE OF CURRENT

FULL

GATE

INSTANTANEOUS
6.

CURRENT- AMPERES

GATE TRIGGER CHARACTERISTICS

1.4

12

/
1.0

NOTES:

ABOVE CASE TEMPERATURE FOR SINGLE LOAD

PULSE OF DURATION t PEAK. ALLOWABLE
DISSIPATION IN SCR KIR IIMt t SI AKI INtf
FROM CASE TEMPERATURE EQUALS I05*C

08

DIVIDED BY THE TRANSIENT

L IMPEDANCE
:

l09*C-Tc
0.6

**"

04

JUNCTION TEMPERATURE IMMEDIATELY PRIOR TO SURGE- -40aC 10+105*0

-Hi

-ctti

SEE PUBLICATION 200.9 ENTITLED "POWER

SEMICONDUCTOR RATINGS UNDER TRANSIENT
AND IN TERMITTANT LOADS."

0.2

""

TIME

(t)

-SECONDS

CYCLES AT 60 CPS

7.

MAXIMUM ALLOWABLE NON-RECURRENT PEAK SURGE

FORWARD CURRENT AT RATED LOAD CONDITIONS

8.

MAXIMUM TRANSIENT THERMAL IMPEDANCE

JUNCTION TO CASE

682

C38

SCR
The C38

Silicon Controlled Rectifier

is

a three junction semiconductor device for use

in

power switching and control applications requiring a blocking voltage of 500 volts or less
and RMS Forward Currents up to 35 amperes. Because of its higher Junction Temperature
Rating than the C35 (2N681-92) series, it will prove useful in applications calling for
higher ambient temperatures or smaller heat sinks than the C35 series permits.
No Peak Forward Voltage

Thermal
High

Limitation

Standard TO-48 Outline

Long Creepage Path

Fatigue Free

Junction Temperature (150C)

Low Thermal

Resistance

OUTLINE DRAWING
(COMPLIES WITH JEDEC TO-481
NOTES:
Complete threodt
1

to exti

within Th thread! of i
plane. Diameter of unthi
portion .249" (6.32MM]

(COMPLIES WITH JEDEC TO-48)

INCHES

NOlfcS

330

.505

<fc

.115

140

1*1

.210

300

*>
be bone pitch diameter .226
(5.76MMI, minimum p.tch diai
eter ,2225"(5.66MM], referem
1957,
.

8.38

12

83

92

56

5 .33

.544

.113

F,

.060

.562

13.82

.200

2.87
1

14.27
5

08

.52

.1*3
22 23

.875

7.62
13.82

.544

Handbook

H2B, 1957, PI.

A chamfer (or undercut] on on.
or both ends of hexagonal par-

MILLIMETERS

SYMBOL

mum, 220" (S.5PMM) Mir

l!o

3.05

oM

.422

.453

.060

.075

.125

165

l/,

10.72
1

.52

3.18

11 .51

.91

4.19

A. W-28sr.ee

Minimum Forward Breakover

Type
Tj

C38U
C38F
C38A
C38G
C38B
C38H
C38C
C38D
C38E
* Values

PRV

Repetitive

Voltage (Vbo)*

= -65Cto +150C
25
50
100
150
200
250
300
400
500

Tj

= -65Cto +150C
25
50
100
150
200
250
300
400
500

volts

volts
volts
volts
volts
volts
volts
volts
volts

apply for zero or negative gate voltage only.

ratings apply
equals llC/watt.

Peak Reverse

Voltage (PRV)*

Maximum

volts
volts
volts
volts

volts
volts
volts
volts
volts

Transient Peak Reverse

Voltage (Non-recurrent <5.0 Millisec.)*
Tj

= -65Cto +I50C
35
75
150
225
300
350
400
500
600

volts
volts

volts
volts

volts
volts
volts
volts
volts

case to ambient thermal resistance for which

maximum

MAXIMUM ALLOWABLE RATINGS

RMS

Forward Current
35 amperes (all conduction angles)
Average Forward Current (I )
_Depends on conduction angle (see charts 3 & 5)
Peak One-cycle Non-recurrent Surge Current (i surB<.).
150 amperes
Peak Non-recurrent Surge Current during Turn-on time Interval
See Chart 10
Pt (for fusing)
75 ampere 2 seconds (for times 5: 1.5 milliseconds)

__12 watts

Peak Gate Power (p G )

Average Gate Power (P G ).

_0.5

watt

Peak Gate Current

_2.0

amperes

_10

volts

(i G )

Peak Gate Voltage (v G ) (Forward and Reverse).

Storage Temperature

65Cto +

150C

Operating Temperature

-65C

150C

Stud Toraue
**N0T TO EXCEED SATE POWER RATINGS

to

30 inch-pounds

~65T

CHARACTERISTICS
C38
TM

Symbol

Peak Reverse and Forward

iR

and

Typ.

Min.

Max.

C38U
C38F
C38A
C38G
C38B
C38H
C38C
C38D
C38E

6.0
5.5
5.0
4.5
4.0
3.0
2.5
2.0
1.5
i

and

ma
ma
ma
ma
ma
ma
ma
ma
ma

10.0
10.0
10.0
10.0
8.0
6.0
5.0
4.0
3.0

9.0
8.9
7.8
7.7
7.5
7.3
6.8
5.3
2.6

C38C
C38D
C38E
20.0

ma
ma
ma
ma
ma
ma
ma
ma
ma

13.0
13.0
13.0
13.0
12.0
11.0
10.0
8.0
6.0

Igf

to Fire

15

40

35

80

Vac

50
100
150
ioo
250
300
400
500

20

1.2

3.0

2.0

3.0

Turn-on Time

ta

Vdc

Vdc

Rated.

25C, Vac

if

mAdc

80

Msec

1.4

t.

-65C, Vac

2.0

1.7

10

Ih

150C.

= 6 Vdc, R L = 50 ohms
= 6 Vdc, Rl = 50 ohms
Tj = 150C, Vac = 6 Vdc, R L = 50 ohms
Vac= 6 Vdc, Tj = 25C, R L = 50 ohms
Vac = 6 Vdc, Tj
-65C, Rl = 50 ohms
Vac = Rated, Tj = 150C, R L = 1000 ohms
= 50a peak, Tj = 25C
Tj = 25C, Anode Supply = 6 Vdc
Tj = 25C, If = 5.0 Adc, Vac = Rated.
Tj

Vdc

Forward Voltage Drop

Tj

Gate open circuited. Vac

mAdc
mAdc
mAdc

0.15

Holding Current

= 150C
= Vca = 25v peak

volts/

40.0

7.5

Gate Voltage

100
150
200
250
300
400
500

yusec

Gate Current to Fire

25v peak

Tj

C38U
C38F
C38A
C38G
C38B
C38H

dv/dt

25C
50

is

Blocking Current*

Rate of Rise of Forward

Voltage that Will Not Turn
on SCR**

=
Vac = Vca =
T,

is

Blocking Current*

Peak Reverse and Forward

Tett Conditions

Units

Gate supply: 10 volt open

max. rise time.

circuit,

25 ohm,

0.1 Msec.

Turn-off Time

24

Tj
150C,
(reapplied)

Msec

if

10a, i R

5a, vac
20v//isec

Rated, dv/dt

Linear

Thermal Resistance
Values apply
See Chart

.75

$]-C

for zero or negative sate voltage.

Max. case

to

1.5

C/watt

Junction to case

ambient thermal resistance for which max.

PRV

ratings apply

11C per watt.

8.

BO
60

40

JUMC now
EHATU

ao
60

29* C-

4 *
-86 c

JUNCTION

r
jO

1 "
i
"

/f

ISO

IOO

I
5

"

<0

/
'

i
<
-

oe
OS
s

D4

kses

OVER VOLTAO
WITH MO A1 1 SIWHAL
.02

10

rMSrANTANCOUS

1.

FORWATO VOLTAGE

MAXIMUM FORWARD

OftOP-

VOLTS

INSTNTM0S

CHARACTERISTICS

2.

CONDUCTING STATE

F01WAW

VOLT ME

MAXIMUM FORWARD

OHO?

12

VOLIS

CHARACTERISTICS

HIGH CURRENT LEVEL CONDUCTING STATE

684

C38
140

/A

l?0

'1
*

k-

,180-

CONDUCTION ANGLE

conduction

ANGLE

30*

60**

90**

120'* I

I80'

60

NOTES

(2)

DC, 0, 30,60 CIRCUITS - RESISTIVE

OR INOUCTIVE LOAD, 50 TO 400 CPS
0" C PER UNIT MAXIMUM THERMAL

(3)

RATINGS DERIVED FOR 0.5 WATT

(1)

DC

"

II

40

12

AVERAGE

24

20

16

FORWARD CURRENT

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

SINUSOIDAL CURRENT WAVEFORM

3.

70

60

/
t

t-

0*

SO

>

K-iH 160

'

ONOUCTION
INGLE

ie

0'

20

*C ONDU CTION

40

90* *

o
o.

30

NGLE

30

12

NOTE

16

JUNCT ION T EMPE *ATUR E =I5C)"C

20

24

28

AVERAGE FORWARD CURRENT- AMPERES

FORWARD POWER

DISSIPATION FOR

SINUSOIDAL CURRENT
685

WAVEFORM

C38

* COND

ANGL E
30"

60'*

90-

180"*

NOTE!

(1)

(2)

!3)

(4)

USE THIS CURVE ONLY FOR INDUCT VE

LOAD CIRCUITS WITH LOAD X L /R
RATIO > 10
FOR OTHER LOAD CONDITIONS, SEE CHIkRT 3
RATINGS DERIVED FOR 0.5 WAIT wtt iAGE

SATE POWER
M'C PER WATT MAXIMUM THERMAL
RESISTAN CE CASE TO AMBIENT.
1

AVERAGE

5.

CURRENT

FORWARD

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

RECTANGULAR CURRENT WAVEFORM
NOTES:

'

TEMPERATURE

(|)

JUNCTION

(2)

USE THIS CURVE ONLY FOR INDUCTIVE LOAD

CIRCUITS WITH LOAD X L/R RATIO > 10
FOR OTHER LOAD CONDITIONS SEE CHART 4

(3)

150* C

o
Ol

o
<

a:

p
<9

<
a:

I
AVERAGE
6.

FORWARD

FORWARD POWER

CURRENT - AMPERES

DISSIPATION FOR RECTANGULAR

CURRENT WAVEFORM
686

C38

MIN GATE CURRENT

REQUIRED TO FIRE
ALL UNITS AT
+ I50C +Z&C -65C

K
O

^^

'

>

o
<

!:

- MIN GATE
- VOLTAGE
BEQ UIRED TO
F "" ALL UNITS

^^
^ ^ V
;

^^

<

:^:

3
o
u

=s s;

'

MAX GATE VOLTAGE

THAT WILL NOT FIRE

ANT UNITS

Z
1

F00

INSTANTANEOUS GATE CURRENT- MA

L"

INSTANTANEOUS GATE
POWER" 12 WATTS

\
FIRIK G

AR :a

NOTE

>

id j UNCTION TEMPERATURE -65-C TO *I50 #C

a) SHADED AREAS REPRESENT LOCUS

F POS ilBLE FIRIN 6 POIN TS FROM
- SS-C T
+I5C c

IN STANT

7.

iNEOU!

GAT

CURF EN T

2. 3

2.4

AMPE RES

FIRING CHARACTERISTICS

300

o
z
o
240

s
or

60

JUNCTION

8.

80

TEMPERATURE

TYPICAL RATE OF RISE (dv/dt) OF FORWARD VOLTAGE

THAT WILL NOT TURN ON SCR
687

160

C38

140

NOTE: JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO SURGE -65"C TO +I50C

<
S

a.

120

U. CO
Ul
III

(E

Si<
Ul

100

60

s
u.0:

60

10
40
20

20

10

60

30

CYCLES AT 60 CPS

9.

MAXIMUM ALLOWABLE NON-RECURRENT SURGE CURRENT

AT RATED LOAD CONDITIONS

100

200

PEAK FORWARD BLOCKING

10.

300
VOLTAGE

400

PRIOR

TO

500

SWITCHING

VOLTS

PEAK NON-RECURRENT SURGE CURRENT DURING

TURN-ON TIME INTERVAL

N0TES
1.0
(1)

CURVE DEFINES TEMPERATURE RISE OF JUNCTION

ABOVE CASE TEMPERATURE FOR SINGLE LOAD
PULSE OF DURATION
PEAK ALLOWABLE
DISSIPATION IN SCR FOR TIM t, STARTING
FROM CASE TEMPERATURE EQUALS ISOC (MAX
Tj
MINUS CASE TEMPERATURE, DIVIDED BY THE
TRANSIENT THERMAL IMPEDANCE
t

0.75

PpEAK

I50C-TC

j-ctt)
(2)

FO R OPTIMU
RA TIN GS A NO FURTHER
IN
tMATIO* SE E fUBL ICA Tl ON 200 9
EN Tl rLED"P OWE \ SEMI cor. JCTOR RATINGS
UN DE R TRA nsie NT AND IN TE RMITTE NT LOA 3S."
tf

I
n
o.wui

o.o'

o.r

i.o

io

wo

TIME (t) -SECONDS

11.

MAXIMUM

TRANSIENT THERMAL IMPEDANCE JUNCTION

TO CASE
688

SCR
80 A

The C45 and C46 SCR's

are rated

80 amperes

RMS

RMS

to

1200

C45
C46

25 to 1200 Volts

volts, for use

phase control applications where high voltage and general pur-

in industrial

pose performance are required.

APPLICATIONS:

FEATURES:
Broad Voltage Range

Up

1200V
Standard TO-94

to

Outline

DC Motor

Plating Supplies

Battery Charging

AC

Drives

Regulators

MAXIMUM ALLOWABLE RATINGS

V DRM

C46
C46
C46
C46
C46
C46
C46
C46
C46
C46
C46
C46
C46
C46
C46
C46

U
F

H
C

M
S

N
T
P

PA
PB

(!)Half sine wave waveform, 10 msec.

maximum

pulse width.

80 Amperes

RMS

Forward Current, On-State, I T(RMS)

Average Forward Current, On-State, I T(AV)
Peak One-Cycle Surge Forward Current, I TSM

Maximum
2
I

Repetitive Rate-of-Rise of

(for fusing), for times

>

300
350
400
500
600
720
840
960
1080
1200
1320
1440

200
250
300
400
500
600
700
800
900
1000
1100
1200

400
500
600
700
800
900
1000
1100
1200

35 Volts
75
150
225

25 Volts
50
100
150

25 Volts
50
100
150
200
250
300

A
G

VRSM <1)
Tj = +125C

Tj = -40C to +125C

Tj = -40C to +125C

C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,
C45,

TRANSIENT PEAK
REVERSE VOLTAGE,

REPETITIVE PEAK
REVERSE VOLTAGE.
V RRM

REPETITIVE PEAK
OFF-STATE VOLTAGE,

TYPE

(All

Conduction Angles)

Depends on Conduction Angle (See Charts 2 and 3)

800 AmP ei s

Anode Current During Turn-On

8.3 milliseconds (See Figure 8)

1.5 milliseconds (See Figure 8)

Peak Gate Power Dissipation, PGM (See Figure 6)

Average Gate Power Dissipation, PG (av)
Peak Negative Gate Voltage, VGM
Storage Temperature, TSTG

^
100A//is

Interval

2600 (RMS Ampere) Seconds

2100 (RMS Ampere) Seconds
100 Watts for 150 Microseconds
2 -
'

"^L
-4U

Operating Temperature, T,

125 Lbs

Stud Torque

-"

In

14

689

a * tS

r
* + 5
Jt ^
to + )
C

+u$

-"
(MaX -)
( Min -)' 15 Lbs In
-

N-m

(Min.), 17

N-m (Max.)

C45, C46

CHARACTERISTICS
TEST
Peak Off-State or Reverse
Current

SYMBOL

MIN.

MAX.

UNITS

Idrm

mA

TEST CONDITIONS
Tj = -40C to +125C

or

Irrm
C45,

C46U

V D rm

10

V RRM

C45, C46F

50

C45,

C46A

100

C45,

C46G

150

C45, C46B

200

C46H

250

C45, C46C

300

C45,

C46D

400

C45,

C46E

500

C45,

C46M

600

C45,

C45, C46S

700

C45,

C46N

800

C45,

C46T

900

C45, C46P

1000

C45,

C46PA

1100

C45, C46PB
Gate Trigger Current

1200
Iqt

75

mAdc

V GT

.25

Peak On-State Voltage

Vtm

3.0

Vdc

3.1

>

20

>

-40C,

20

Volts

>

20

Ih

R0jc

100

mAdc

of Forward
Blocking Voltage. (Higher values
may cause device switching.)
Critical Rate-of-Rise

dv/dt

0.4

100

690

= 6 Vdc,

RL

= 3 ohms,

VD

= 6 Vdc,

RL

to

+120C, V D = 6 Vdc,
20 /usee.

>

Tc = +125C,
ohms, t p = 20

VD

= Rated,

RL

RL

= 1000

/usee.

T c = +25C, I TM = 500 Amps.

<

= 3 ohms,

/usee.

Peak, Duty

.01%.

T c = +25C, Anode Supply = 25 Vdc,

Forward Current = 2 Amps.

C/W

D.C.

V//US

Tj = +125C Rated
Circuited.

VD

= 50 ohms, t
p

Initial

Thermal Resistance

= 3 ohms,

jusec.

T c = -40C

Cycle

Holding Current

RL

= 6 Vdc,

/usee.

T c = +125C,

40

Gate Trigger Voltage

Tc =

130

VD

Tc = +25C,
t

Effective

= 25= Volts - Peak

V DRM

Gate Open

C45, C46
1000

400

100

Tj = 125-C/HTj =

25C

4.0

3.0

2.0

1.0

INSTANTANEOUS ON VOLTAGE

VOLTS

MAXIMUM FORWARD CHARACTERISTICS ON-STATE

SINUSOIDAL

SQUARE WAVE

60
50
40
30
20
AVERAGE FORWARD CURRENT- AMPERES
2.

AJ

10

80

20

30

40

50

60

AVERAGE FORWARD CURRENT -AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

I
60
40
50
30
20
AVERAGE FORWARD CURRENT-AMPERES

60
50
40
30
20
AVERAGE FORWARD CURRENT -AMPERES
4.

AVERAGE FORWARD POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

5.

691

AVERAGE FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

C45, C46

30

PULSE GAT E
CIRCUIT LO AD

20

Tp

i.

LINE 15V, 45J2

OflSj

notes:

*>

2.
-i.

i-^f^o-

POSSIBLE

tj-V

I-

*-

''<*.

3.

4.

-40C T0+25C
-?

>1

5.

\
6.

- >5C

20V, 20X1,. 1/iSEC RISE TIME

MINIMUM GATE SOURCE
LOAD LINE FOR DI/DT<IOOA/>SEC.
REPETIVE LONG LIFE RATING.
FOR 15V, 4611,. SyaSEC.
RISE TIME, DI/DTSSOA/^SEC.
HAS BEEN CONFIRMED BY
LIFE TEST.
IS

L.

^r

maximum allowance
average gate dissipation
= 2.0 WATTS.
RECTANGULAR
GATE PULSE.
Tp= GATE CURRENT
PULSE WIDTH
CASE TEMPERATURE

,^-40' C

.06.07.08.09.1

.2

.3

.4

.6

.5

INSTANTANEOUS GATE CURRENT

.7.8.9

AMPERES

INSTANTANEOUS GATE CURRENT AMPERES

6.

...
1
1

0\

5>
e

h-

~ 10 OR 30

>

3000

IlA'

0.5

iu2000
1-0-

ms.

OR

o 04

z
<

$B,
jv

l)C

r^lti

iooo

900

3 800

L-

~W///M

700
600

<
hi

10

40

100

T
7.

400

10

t,

ME

Bt c

PULSE BASE WIDTH

TRANSIENT THERMAL IMPEDANCE

8.

JUNCTION-TO-CASE

AND

MILLISECONDS

TSM FOLLOWING RATED

LOAD

CONDITIONS (NON-RECURRENT)

I
3

456789

20

10

NUMBER OF CYCLES

MULTICYCLE SURGE CURRENT

(NON-RECURRENT)
692

30

40 50 60

(60 Hz)

Tj = 125 C

C45, C46

OUTLINE DRAWINGS
C45 OUTLINE (Conforms

to

JEDEC TO-94

TABLE OF DIMENSIONS

Outline)

Conversion Table

FLEXIBLE

COPPER LEAD

SYM.

A
D
E
F

G
G
H
J

K
K
L
L

M
M
N

N
O
O
P
P

.827
20.243
21.005
.080
2.032
.278 .350
7.060
8.890
.874 1.030
22.099
26.162
1.049 1.062
26.975
26.644
.840 .910
21.335
23.115
6.204 6.512 157.619 165.443
- 1.750
44.450
1.484 1.640
41.656
37.653
4.437 5.623 112.698 142.824
.275 .325
6.985
8.255
12.319
.445 .485
11.302
.251
6.375
7.137
.281
.198 .212
5.029
5.385
.500 .600
12.700
15.240
9.778
10.541
.385 .415
.632 .725
16.052
18.390
16.256
.590 .640
14.985
7.000 7.342 177.799 186.487
7.925 Ref.
.312 Ref.
3.811
.140 .150
3.555
1.524
1.905
.060 .075
.250 Norn.
6.350 Norn.
.290 Norn
7.366 Nom.
2.413
1.651
.065 .095
1.473,
1.778
.058
.070
11.760
12.649
.463 .498

MILLIMETERS
MIN.
MAX.

.797

S
S

INCHES
MIN. MAX.

C46 OUTLINE

NOTES
1.

Complete stud threads (yi-20

UNF

2 A) to within 2Vi threads of head.

2.

Flexible lead covered with silicon rubber insulation (Class H),

3.

Orientation of cathode and gate terminals not defined.

4.
5.

600

volt

ASTM

standard wall.

One, lA-20 steel, cadmium plated nut and one cadmium plated spring washer supplied with each
Approximate weights:

WITH HARDWARE

unit.

WITHOUT HARDWA RE
GRAMS
OUNCES

UNIT

OUNCES

GRAMS

C45
C46

4.25

120

3.50

3.50

99

2.75

99
78

693

HIGH SPEED

C48

Silicon

Controlled Rectifier
1200 VOLTS

The General

C48

Electric

device designed for

Silicon Controlled

power switching

at

110A

Rectifier

is

RMS

an all-diffused

high frequencies.

FEATURES:

Fully characterized for operation in inverter and chopper applications.

High dv/dt with selections

Excellent surge and

Rugged hermetic package.

2
I

available.

ratings providing easy fusing.

C48

C48--2

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

TYPE

Tj = -40C to +1 25C

Tj = -40C to +125C

Tj = +125C

600 Volts
700
800
900
1000
1100
1200

600 Volts
700
800
900
1000
1100
1200

720 Volts
840
940
1080
1200
1320
1440

C48M
C48N
C48T
C48P

C48PA
C48PB

<

Half sinewave waveform, 10 ms max. pulse width.

RMS On-State Current, I T(RMS)

Peak One Cycle Surge (Non-Repetitive) On-State Current, I
TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
2

(for fusing) for times

(for fusing) for times

2
I

NON-REPETITIVE PEAK REVERSE

VOLTAGE, V RS |vi (1)

VOLTAGE, V RRM

C48S

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM <1>

>
>

1.5 milliseconds

8.3 milliseconds

Critical Rate-of-Rise

of On-State Current, Non-Repetitive

Critical Rate-of-Rise

of On-State Current, Repetitive

10 Amperes

700
670
2
1,360 (RMS Ampere)
2
2,000 (RMS Ampere)

Amperes
Amperes
Seconds
Seconds

100

A/jus t

75

A/jus f

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

.40c to +150C

Operating Temperature, Tj

-40

2 Watts

Stud Torque

to

+125C

125-150
14.1

I
fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
20 ohms gate trigger source with 0.5 ms short circuit trigger current rise time.

694

max. rated

Lb .-In.

-17N-m

Vdrm;

20 volts

>

C48

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

UNITS

12

mA

!rrm

TEST CONDITION
Tj =-40C to +125C

and

!drm
Thermal Resistance

R 0JC

.3

Critical Rate-of-Rise of

dv/dt

200

C/Watt
V//isec

Off-State Voltage (Higher

values may cause device
switching)

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

V DRM

V RRM

Jun ction-to-Case
Tj = +125C, Gate Open. VDRM = Rated,
Using Linear or Exponential Rising

Waveform.
Exponential dv/dt Higher

DC

Igt

VGT

VTM

minimum

dv/dt selections available

150

300

Tc =

125

Tc =

3.0

3.5

Tc =

VD
-40C, V D
+125C, V D
+25C, V D
-40C, V D

0.25

Tc

+1 25C, Rated

4.0

Vdc

Volts

Tc =

+25C,

Tc =

RL
= 6 Vdc, R L
= 6 Vdc, R L
= 6 Vdc, R L
= 6 Vdc,

tq

isec

(2)

(3)

Voltage)

(4)

C48 - 30

C48 - 40

30
40

Ohms
Ohms

Ohms

= 3

Ohms

R L = 3 Ohms
VDRM ,R L = 1000 Ohms

T c = +25C, I TM = 500 Amps.

(1)

= 6 Vdc,

wide pulse. Duty Cycle

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

(.632)

consult factory.

mAdc

V RM

<

Peak,

ms.

T c = +125C
I

T = 150 Amps.

V R = 50 Volts Min.
V DRM (Reapplied)

(5)

Rate-of-rise of reapplied off-state

voltage = 20 V//isec (linear)

(6)

Commutation

di/dt

Amps/iisec

Repetition rate = 1 pps

(8) Gate bias during turn-off interval =
(7)

volts,

C48 - 3d
C48

40

38

48

Msec

t
t

100 ohms

(1)

T c = +125C

(2)

(3)
(4)
(5)

T = 150 Amps.

V R =50 Volts Min.

VDRM (Reapplied)
Rate-of-rise of reapplied off-state
voltage = 200 V//Jsec (linear)

(6) Commutation di/dt = 5 Amps//isec

(7) Repetition rate = 1 pps
(8) Gate bias during turn-off interval =
volts,

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

/isec

tq

(1)
(2)
(4)

C48 - 40

45

T = 150 Amps.

VR =
vdrm

Volt
(Reapplied)
(5) Rate-of-rise of off-state voltage =
(3)

C48 - 30

100 ohms

T c = 125C

200 V//isec

(linear)

di/dt = 5 Amps/jusec
Repetition rate = 1 pps
=
(8) Gate bias during turn-off interval

55

(6)

Commutation

(7)

volts,

fConsult factory for a specified

maximum

turn-off time.

100 ohms

695

SINE

C48

WAVE CURRENT RATING DATA

800

400"

1000

3--

2500
1

"

100

5000 PULSES PER SECC )ND

30
100

1000

PULSE BASE WIDTH

- /is

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH <T C = 65C)

800

NOTES:
and Rectangular or Wave Current Ratings)
Switching voltage = 800 volts.
Maximum circuit dv/dt = 200 V/psec
Reverse voltage applied = Vr
800V.

(Pertaining to Sine
1.

2.

3.

4.

<

Required gate drive:

20 volts, 20 ohms,

.1

Msec risetime for 75 A//isec

repetitive rating.
5.

1000

PULSE BASE WIDTH

10000

-/. t

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)
800

o
<

100

1000

PULSE BASE WIDTH

3.

10000

- >is

ENERGY PER PULSE FOR SINUSOIDAL

PULSES

(Tj = 125C)

696

RC

Snubber Circuit = .25

/if,

20n

RECTANGULAR WAVE CURRENT RATING DATA

DUTY CYCLE - 50%

C48

DUTY CYCLE - 25%

1000

1000

50
1000

100

50
_500

DO '000

Jx

""

.2500

2500 5000 10,000

10,000

PULSES PER SECOND

PULSES PER 5EC0N )-

10

10

40

20

RATE OF RISE OF ON-STATE CURRENT

4.

60

80

100

(A/^is)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

5.

40
60
8
10
20
RATE OF RISE OF ON-STATE CURRENT (A//it)

80

100

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

1000

50

50

500

y* )0
100

100

2500

5000
5000
10,000

10,000 PULSES PER SECOND

PULSf:s pe R SECO NO

10

6.

20
40
60
8
10
RATE OF RISE OF ON-STATE CURRENT (A//$)

10
40
8
20
RATE OF RISE OF ON-STATE CURRENT (A/>s)

80 100

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90 C)

7.

60

80

100

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

I
697

WATT-SECOND PER PULSE

C48
..j

IOOO

^^ p

If

"'v^"iiy^

T"

4v>

100"

&

%
b

Sji^

!!:i&

>L

^0

^s

^> J<3/

-i.t

****<i 0/

^"^

^05

i0/
10000

IOOO

100

PULSE BASE WIDTH

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 100A/Msec)
Tj =

9.

10000

IOOO

100

PULSE BASE WIDTH -MS

8.

^^v.

100

''.^iPs,

0n

.--

V\ ^N'%&-**

-C

Kfe
s&o

-/is

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 25A/jUsec)
Tj = 125C

25C
IOOO

s
)i
*

'.j

*>
^

<o >^
9

5&

V--

'

Fy

>w

""

V
s
,

'"

'

rft

h
f

s&-i

"*si>/

<on }
Sg
; 0/

IOOO

100

I0000

PULSE BASE WIDTH M s

10.

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5A/jUsec)
Tj = 125C

RECOVERED CHARGE DATA

I
I

TM =500A

400A
iOOA
200A

300A
pnnA

?n

TM =500A_

20

IOOA

I00A

50A

10

10

10

20

REVERSE
11.

50
di/dt

I00

10

A//xs

TYPICAL RECOVERED CHARGE DATA

12.

(Tj = 25C)

20
REVERSE

50

100

dl/dt -A//is

TYPICAL RECOVERED CHARGE DATA

(Tj = 125C)

SINEWAVE CURRENT WAVEFORM

SINEWAVE CURRENT WAVEFORM

698

C48
10000

1000

500
200
100

I25CA

#AEO**

20

5
2
3
4
INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

MAXIMUM ON-STATE CHARACTERISTICS

13.

40
<n

*V^l

30

>Vo 'ox*
I

> 20

-r

%>
20V, 4011

-LOAD LIN

7\

NOTES:

^+>

J>

xX
^X*

1.

*^V-

2.
3.

Locus of possible dc trigger points lies outside the

boundaries shown at the various case temperatures.
Rectangular gate pulses.
Tp = gate current pulse width.

-*rsr
, + 25C
l

5C
20V, 20fl
LOAD LINE
.5

.3
.125

14.

5.0

3.0

2.0

1.0

.7

INSTANTANEOUS GATE CURRENT

7.0

10

AMPERES

GATE TRIGGERING CHARACTERISTICS AND

POWER RATINGS

2000

I
2

.001

10

15.

10

.01

TIME

PULSE BASE WIDTH-mS

SUB-CYCLE SURGE (NON-REPETITIVE)

2
ON-STATE CURRENT AND t RATING

16.

SECONDS

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

699

100

C48

OUTLINE DRAWING

SEATING PLANE

SYM
A
B

MODEL

TERMINAL

C48-2

GATE

TERMINAL

CATHODE

TERMINAL

THREAD SIZE

ANODE

1/2-20

UNF-2A

1.

3.

ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT. MATERIAL
OF HARDWARE IS STEEL, CAD PLATED.
"T" OIM. IS AREA OF UNTHREADED PORTION. COMPLETE THDS. ARE
WITHIN 2.5 THREADS OF SEATING PLANE.
ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.

.390

1.460 REF
1.660 1.800

.312

.797

.827

.060

.075

.385

.4

.445

.485

.198

212

GATE a AUX. CATHODE LEADS SUPPLIED LIGHTLY TWISTED TOGETHER

FLEXIBLE COPPER LEAD
N
NE L C
AS H E
U PPUED Wl
UN T MATER AL F
* HA
S T EE L
p L A\I D
4. "R" OIM. IS DIA. OF EFFECTIVE SEATING
AREA.
5. "T" DIM. IS AREA OF UNTHREADED PORTION.
COMPLETE THDS ARE
WITHIN 2.5 THREADS OF SEATING PLANE
6. ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.
1.

^rRtTs

^D

"^

'

'

I
700

METRIC

MM

NOTES

MAX

MIN.

14 98 16.26

MAX.

.590

.640

7.92

REF

.058

.070

.840

.910

21.33 23.1

499

10.79

1.78

1.47

792 REF

20.24 21.01
1.52

32

1.30 12

.425

1.91

9.77 10.54

12.67

.060

1.52

ME1rRIC

MM

SYM

MAX.

INCHES
MAX.

MIN.

METRIC

MM

MIN.

NOTES
MAX.

.330

9.90 12.70

275

.325

6.98

1.570 1.750

39.87 44.45

.065

.095

165

2.41

6.000 6.390 152.40 162.31

.840

.910

21.33

23.11

6.850 7.500 173.99 190.50

.425

.499

1079

12.67

.920

1.020

.390

1.140 25.90 28.96

.797

.827

.140

.150

20.24 21.01
3.55

3.81

.300

7.62

500

.610

12.70 15.49

.260

281

6.60

1.052 1.063 26.72 27.00

5.38

5.02

MIN.

.500

A
B

2.

INCHES
MIN.

42.16 45 72

15

INC HES
MIN. MAX.

SYM.

9.90 12.70

REF

NOTES:

MM
MAX

.500

SYM

METRIC
MIN.

1.020 1.140 25.90 28.96

NOTES:

2.

INCHES
MIN MAX

7.14

8.38

23.36
.060

8.26

1.57

1.052 1.063 26.72 27.00

HIGH SPEED

C49

Silicon Controlled
600 VOLTS

The General

110

C49 Silicon Controlled Rectifier

power switching at high frequencies.

Electric

device designed for

is

RMS

an all-diffused

FEATURES:

Fully characterized for operation in inverter and chopper applications.

High dv/dt with selections

Excellent surge and

Rugged hermetic package.

2
I

available.

ratings providing easy fusing.

C49

Equipment designers can use the C49

Choppers

Inverters

in

C49--2

demanding applications, such

as:

Induction Heaters

Cycloconverters

High Frequency Lighting

DC

to

DC

Conversion

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

VOLTAGE, Vdrm* 1

TYPES

'

Tj = -40C to +125C

C49A10,
C49B10,
C49C10,
C49D10,
C49E10,
C49M10,
1

C49A20
C49B20
C49C20
C49D20
C49E20
C49M20

100 Volts
200
300
400
500
600
ms max.

Half sinewave waveform, 10

REPETITIVE PEAK REVERSE

VOLTAGE, V RRM 'D

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM

Tj = -40C to +125C

Tj = 125C

100 Volts

150 Volts
300
400
500
600
720

200
300
400
500
600

2
t

(for fusing) for times

(for fusing) for times

2
I

>
>

1.5 milliseconds

2,850

8.3 milliseconds

4,150

Critical Rate-of-Rise

of On-State Current, Non-Repetitive

Critical Rate-of-Rise

>

of On-State Current, Repetitive

(RMS
(RMS

! 10 Amperes
1000 Amperes
920 Amperes
Ampere) 2 Seconds
Ampere) 2 Seconds
200 A/ms t
100 A//us t

2 Watts

Average Gate Power Dissipation, Pg(av)

Storage Temperature,

pulse width.

RMS On-State Current, I T (RM s)

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
I

<

-40 C to

+150C
-40C to +125C

T stg

Operating Temperature, Tj

125-150 Lb.-In.
14.1 - 17 N-m

Stud Torque

fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5 jus short circuit trigger current rise time.

701

Vdrm;

20

volts,

C49

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

UNITS

Irrm

12

mA

TEST CONDITIONS
Tj = -40C to +125C

and

!drm
Thermal Resistance
Critical Rate-of-Rise of

RflJC

dv/dt

.35

200

C/Watt
V//isec

Off-State Voltage (Higher

values may cause device
switching)

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

vDRM

VRRM

Jun ct ion-t o-Case

Tj = +125C, Gate Open. VDRM = Rated,
Using Linear or Exponential Rising

Waveform.
Exponential dv/dt =

!gt

VGT

VTM

minimum

dv/dt selections available

300

Tc =

125

Tc

3.0

3.5

Tc

0.25

Tc

3.0

Higher

DC

150

mAdc

Vdc

Volts

VpRM

consult factory.

V D = 6 Vdc, R L = 3 Ohms
-40C, V D = 6 Vdc, R L = 3 Ohms
= +125C, V D = 6 Vdc, R L = 3 Ohms
= +25C, V D = 6 Vdc, R L = 3 Ohms
= -40C, V D = 6 Vdc, R L = 3 Ohms
=+125C, Rated VDRM ,R L = 1000 Ohms

Tc =

Tc

+25C,

T c = +25C, I TM = 500 Amps.

wide pulse. Duty Cycle

Conventional Circuit

tq

/isec

Commutated Turn-Off
Time (with Reverse

(1)
(2)
(3)

Voltage)

(4)

C49 - 10

C49 - 20

10

15

20

(.632)

(5)

<

Peak,

1%.

T c = +125C
I

T = 150 Amps.

V R = 50 Volts Min.
VDRM (Reapplied)
Rate-of-rise of reapplied off-state
voltage = 20 V/yusec (linear)

di/dt = 5 Amps/jusec
Repetition rate = 1 pps.
(8) Gate bias during turn-off interval =
(6)

Commutation

(7)

volts,

C49 - 10

C49 - 20

13

20

(1)
(2)
(3)
(4)

(5)

100 ohms

T c = +125C
I

T = 150 Amps.

V R = 50 Volts Min.
VDRM (Reapplied)
Rate-of-rise of reapplied off-state

= 200
Commutation

voltage

V/isec (linear)

di/dt = 5 Amps//^sec
Repetition rate = 1 pps.
(8) Gate bias during turn-off interval =
volts, 100 ohms
(6)

(7)

Conventional Circuit

/isec

tq(diode)

Commutated Turn-Off
Time (with Feedback

(1)
(2)
(3)

Diode)

(4)

C49 - 10

20

C49 - 20

35

(5)

T c =+125c
I

T = 150 Amps.
1
Volt
(Reapplied)

VR =
VDRM

Rate-of-rise of reapplied off-state

voltage = 200V//isec (linear)

di/dt = 5 Amps/jUsec
Repetition Rate = 1 pps
(8) Gate bias during turn-off interval =

(6)

Commutation

(7)

volts,

fConsult factory for

maximum

turn-off times for these conditions

I
702

100 ohms

ms.

WAVE CURRENT RATING DATA

SINE

C49

lOOOr

W8-

600500400300

!v2w
h

r*

&Cn.
hs!"

11

2 500

100

60

5000
80

60
50

I000O

ioL
2530

50

200 300 500

1000
2000
PULSE BASE WIDTH -^S

80100

5000

10000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)
NOTES:

1000

800
700
u> 600
500
m 400
o.
2 300

(Pertaining to Sine
1.

3.

-Oft,

<
'

2.

&

4.

fe

200

->,

and Rectangular Wave Current Ratings)

Switching voltage = 400 volts.

Maximum ckt. dv/dt = 200 volts/jusec.
Reverse voltage applied = Vr <400V.
Required gate drive:
20 volts, 20 ohms, .1 Msec risetime for 100 amps/Msec
repetitive rating.

2 500

100

i-

20

5000

to

<

60

volts,

40 ohms,

.5 Msec risetime for

30 amps/jusec

repetitive rating.

u HO
1-

400

000

5.

60
50
40

RC

Snubber

ckt.

= .25

iif,

5ft.

the circuit di/dt remains below 30 amps/Ms, and normally

constructed snubbers using the components specified are employed; then the "soft" gate drive is sufficient. (20V, 40ft,
0.5 Msec risetime.)
If

z 30
o
V
< 20

25 30 40 50

80 100

1000
2000
200 300 500
PULSE BASE WIDTH-^S

5000

10000

If the circuit di/dt exceeds 30 amps/Ms, then the stiff gate

source (20V 20ft), t r = .1 ms, must be used. In addition
the total device di/dt must be checked to insure that it is
the long term repetitive limit for stiff gate source. (20V,

20ft, 0.1 Msec risetime.)

2.

000
800
70
2 600
500
1

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)

**

^^^
(o

Np,f
,o *^S

400
| 300
^ 200
z

70

60

<?

40

? 50

So

o 30
2

20

X-n,

% I00
80

V^sc^
'SA

No

UJ
EC

UJ

&>>.

#* s

<?-v

N?

&
25304050

10

80IOO

000
200 300 500
PULSE BASE WIDTH-/S
1

2000

5000

I0000

ENERGY PER PULSE FOR SINUSOIDAL

PULSES

(Tj = 125C)

703

RECTANGULAR WAVE CURRENT RATING DATA

DUTY CYCLE - 25%

DUTY CYCLE - 50%

C49

50

50

5C)0

1000

y
<

100

_50Q

2500

200

500Q

150

JOQO
.500

z 80

SOOo

UJ

/()

a:

O
60

UJ
1h(/)

^,

ioo

<J

<n

50

JO.OOQ

PULSES PES
SECOND

80

r^r-SES^p
i

40

UJ
-

RATE OF RISE
4.

50

40 50
OF ON-STATE CURRENT -A/>S
30

20

10

60

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

80

30
40 50
20
10
8
RATE OF RISE OF ON-STATE CURRENT-A/>S

8C

5.

100

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

200

100

50

80
70

1000

60

2500

UJ

15

50
500
1000

100

2500

UJ
a:

Ui

<

50
5000

h-

80
70

z 60
UJ

5000
30

o 40
UJ

< 30
tin

20

<n
i

10,000

O 20

PULSES PER SECONC

<
10,000

UJ

PULS FS P

Q.

^^^B
l

10

6.

10

40 50
20
30
RATE OF RISE OF ON-STATE CURRENT -A/11S
8

10

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

7.

1000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90 C)

e
'

o.

^_

800
700

.t

200

w 600

i/^S

500

&

>

rv,

&*

N^

SPs

20

20 304050 80100
200300 500 1000
PULSE BASE WIDTH-jiS

2000

5000

20

h &-

S^/

&><.

s&
SH/

s^

20 304050 80100 200 300 500 1000

PULSE BASE WIDTH-^S

10000

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 100A/Msec)
Tj = 125C

8o

w
o

UJ

"/

100

70
60
50
40
30

f^s

^\

tr

100

S.C(

^ 200

<

^^
*/.

N'

400
2 300
<

uj

r^<:&r

?/

IO
10

100

1000

700
600
500
400
300

80
70
60
50
40
30

80

20
30
40 50
8
10
RATE OF RISE OF ON-STATE CURRENT- A/>S

8'

ENERGY PER PULSE

VS.

AND PULSE WIDTH

704

5000 10000

PEAK CURRENT

(di/dt

Tj = 125C

2000

= 25A/fJtsec)

C49

1000

800
700
600
500
400

'.

^
N*,

\o

500 A

20

fc Kc

400A
300A
200A

300
.

200

-)

100

CO

40

O
V
<

so

TM =50A

*&<

r^V?H

no
5n

h1-

I00A

o RO
111

^5

V _
V}'

s-

10

20 304050 80100 200 300 500 1000

PULSE BASE WIDTH -/iS
10.

2000

5000

10000

20

10

REVERSE

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5A//isec)

11.

50

I0O

di/dt - A//iS

TYPICAL RECOVERED CHARGE DATA

(Tj = 125C)

Tj = 125C
000

40

^g^"^

800
,

I-

z
ui

30

<
500
400
300

"4b ^

(r

H*v.

I 200

+JS

r-

L5SJ_

'ifX?
I00

*^K-

80
50

40
I25c/

30

25C
-40* C

o
o

in

IO

20V, 20 il

(Si

LOADLINE

2.0

I.O

4.0

3.0

INSTANTANEOUS ON-STATE VOLTAGE

12.

5.0

VOLTS

MAXIMUM ON-STATE CHARACTERISTICS

.I

.150
.125

.2

.3

.5

.7

1.0

2.0

INSTANTANEOUS GATE CURRENT

3.0

5.0

7.0

10

AMPERES

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

13.

NOTES:
1.

5,000
2.

"

3.

4,000

Locus of possible dc trigger points lies outside the

boundaries shown at the various case temperatures.
Rectangular gate pulses.
Tp = gate current pulse width.

<

3,000

uj co

2,000

INITIA

i_u

Tj

-40C TO

-125 >C

3.=.

Q_

r n*

l<"o

1,000

1.5

PULSE BASE WIDTH -mS

14.

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING
l

705

C49

.001

.01

.1

TIME

SECONDS

TRANSIENT THERMAL IMPEDANCE

15.

JUNCTION-TO-CASE

OUTLINE DRAWING

ME1 RIC

INC HES

SYM

MM
MAX.

MIN.

MAX

020

1.140 25.90 28.96

390

INC HES
MIN. MAX.

SYM

MIN.

.330

MET RIC
MM
MIN.

NOTES

MAX.

8.38

9.90 12.70

275

.325

6.98

570 1.750 3987 44.45

.065

.095

1.65

2.41

6.000 6.390 152.40 162.31

.840

.910

21.33

23.11

6.850 7,500 173.99 190.50

.425

.499

1079

12.67

.920

1.

.500

.797

.827

.140

.150

20.24 21.01
3.55

.300

7.62

500

610

12.70 15.49

.260

281

6.60

3.81

23.36

.060

8.26

1.57

1.052 1.063 26.72 27.00

7.14

TERMINAL TERMINAL TERMINAL TERMINAL

MODEL

NOTES:

GATE 8 AUX. CATHODE LEADS SUPPLIED LIGHTLY TWISTED TOGETHER.

2. FLEXIBLE COPPER LEAD.

CATHODE

ANODE

1.

3.

ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH

HARDWARE IS STEEL, CAD PLATED.

UNIT.

5.

"R" DIM. IS DIA. OF EFFECTIVE SEATING AREA.

"T" DIM IS AREA OF UNTHREADED PORTION. COMPLETE

6.

WITHIN 2.5 THREADS OF SEATING PLANE.

ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.

4.

AUX
CATHODE

GATE

C49

MATERIAL OF

THREAD SIZE
1/2

-+-

20UNF-2A

THDS. ARE

-SEATING PLANE
5

^UigH

cr^

SYM
A
B

MODEL

TERMINAL

C49-2

GATE

TERMINAL

CATHODE

TERMINAL

THREAD SIZE

ANODE

1/2-20 UNF-2A

3.

MAX

MIN.

.390

5qo

1.460 REF

l.660| 1.800

SYM.

INC HES
MIN.

MET RIC
MM

MAX. MIN

NOTES

MAX.

.590

.640 14 98 16.26

.058

.070

.840

.910

21.33 23.1

10.79

9.90 12.70
7

92 REF

1.47

1.78

45 72

42. 16
|

2.

MAX

1.020 1.140 25.90 28.96

.312

.797

ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT. MATERIAL
OF HARDWARE IS STEEL, CAD PLATED.
"T" DIM. IS AREA OF UNTHREADED PORTION. COMPLETE THDS. ARE
WITHIN 2.5 THREADS OF SEATING PLANE.
ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.

706

REF
.827

92 REF

20.24 21 01

060

075

.425

499

385

.415

9.77 10.54

.060

.445

.485

11.30 12.32

.198

.212

NOTES:
1.

ME TRIC
MM

INC HES

MIN

1.52

5.02

1.91

5.38

12.67
1.52

1.052 1.063 26.72 27.00

High Power

C50
C52

Silicon

Controlled Rectifier
110 A RMS
25 to 1200 Volts
The General

Electric C50 and C52 Silicon Controlled Rectifiers are

diffused devices designed for phase control applications.

all-

FEATURES:
High dv/dt With Selection Available
Excellent Surge and I 2 t Ratings Providing Easy Fusing
Rugged Hermetic Package

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK
REVERSE VOLTAGE

REPETITIVE PEAK
OFF-STATE VOLTAGE

TYPE

v drm'

Vrrm

C50U

C50H
C50C

C50D
C50E
C50M

C52U
C52F

(2N1909)
(2N1910)
(2N1911)
(2N1912)
(2N1913)
(2N1914)
(2N1915)
(2N1916)

C52A
C52G
C52B
C52H
C52C
C52D
C52E
C52S

C50N
C50T

C52N

C50PA
C50PB

Half sine wave waveform,

RMS

100

On-State Current,

msec,

I t(

maximum

Switching

Switching

pulse width.

I T (av)
of On-State Current (Non- Repetitive) di/dt:*

no Amperes (All Conduction Angles)

Conduction
Angles (See Charts 3 and 4)
Depends on

Volts
Volts

Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)

Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
I

(for fusing), for times

(for fusing), for times

2
I

>
>

8.3 milliseconds

(See Figure 9)

1.5 milliseconds

(See Figure 9)

Peak Gate Power Dissipation, P GM (See Figure 7)

Average Gate Power Dissipation, Pg(av)
Storage Temperature,

400
500
600
720
840
960
1040
1200
1320
1440

1100
1200

r M s)

From 1200
From 600

75
150
225
300
350

200
250
300
400
500
600
700
800
900
1000

Average On-State Current,

Critical Rate-of-Rise

25 Volts

150

150
200
250
300
400
500
600
700
800
900
1000
1100
1200

C52T
C52P
C52PA
C52PB

C50P

50

C52M

C50S

Tj = +125C

25 Volts
50
100

25 Volts

(2N1792)
(2N1793)
(2N1794)
(2N1795)
(2N1796)
(2N1797)
(2N1798)

REVERSE VOLTAGE
v rsm'

Tj = -40Cto +125C

Tj = -40C to +125C

C50F
C50A
C50G
C50B

NON-REPETITIVE PEAK

100 Amperes Per Microsecond

200 Amperes Per Microsecond
1000 Amperes
910 Amperes
2
4150 (RMS Ampere) Seconds
2
2850 (RMS Ampere) Seconds
100 Watts for 150 Microseconds
^ Watts
-40C to +150C

T stg

-40C to +125C

Operating Temperature, Tj

125 Lbs.-In. (Min.) - 150 Lbs.-In. (Max.)

14 N-m (Min.) - 17 N-m (Max.)

Stud Torque

*di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
20 ohms gate trigger source with 0.5 lisec short circuit trigger current rise time.

707

Vdrm

stated above; 20 volts,

C50, C52

CHARACTERISTICS
SYMBOL

TEST

MIN.

Idrm

Repetitive Peak Reverse

and Off-State Current

MAX.

UNITS

10

mA

C52U

Tj

=-40C

+125C

to

and

V DRM

Irrm
C50,

TEST CONDITIONS

V RRM
25 Volts Peak

(2N1909)

C50, C52F

50

C50,

C52A

(2N1910) (2N1792)

100

C50,

C52G

(2N1911) (2N1793)

150

C50, C52B

(2N1912) (2N1794)

200

C50,

C52H

250

C50, C52C

(2N1913) (2N1795)

300

C52D

(2N1914) (2N1796)

400

C50, C52E

(2N1915) (2N1797)

500

C50,

C50,

C52M

C50, C52S

600

(2N1916) (2N1798)

700

C52N

800

C50, C52T

900

C50, C52P

1000

C50,

C50,

C52PA

1100

C50, C52PB

DC

1200

Gate Trigger Current

Igt

75

mAdc

T c = +25C, V D =
t

V GT

Gate Trigger Voltage

3.0

Vdc

V TM

2.5

>

Ih

100

Critical Rate-of-Rise of Off-State

Voltage. (Higher values

device switching.)

may

Rfljc

dv/dt

200

0.4

Ohms

= 6 Vdc,

RL

= 3

Ohms

Volts

mAdc
C/Watt

Msec

6 Vdc,

RL

= 3

Ohms

+125C, V D = 6 Vdc,
t
> 20 Msec
p

T c = +125C, V D =

Volts/

cause

to

= 50 Ohms,

Rated,

R L = 1000

= 20 Msec

T c = +25C, I TM = 500 Amps.

<

Peak.

0.01%

T c = +25C, Anode Supply = 24 Vdc.

Initial

Thermal Resistance

= 3

20 Msec

Duty Cycle
Holding Current

VD

-40C,

Ohms,
Peak On-State Voltage

RL

20 Msec

T c = -40C

RL
.25

>

6 Vdc,

20 Msec

T c = +125C, V D =

40

DC

>

Tc =

130

Forward Current = 2 Amperes

Junction-to-Case

Tj = +125C, Rated V^rm Using Linear

Exponential Rising Waveform, Gate Open
Circuited. Exponential dv/dt = V DR m
(.632).

Circuit

Commutated Turn-Off Time

*q

80

(Typical)

/isec

(1)

(2)
(3)

T c = +120C
I

T = 50 Amps.

V R = 50 Volts Min.
VDRM (Reapplied) =

Rated
Forward
Blocking Voltage = 20 V/iisec (Linear)
Volts, 100 Ohms During
(6) Gate Bias;
Turn-Off Interval
(4)

(5) Rate-of-Rise of Reapplied

(7)
Higher

minimum

Duty Cycle

dv/dt selections available, consult factory.

708

<

.01%.

C50, C52
4000

400
Tj =

2000

^Tj

1500

100

25C
= 125 "C

1000

40

800
600
Tj *

I25c/ Aj

2 5C

400

10

200

n
0.5

1.0

2.0

1.5

2.5

INSTANTANEOUS ON VOLTAGE

100

3.0

3.5

o
1

UJ

"o

V~

ioo

oDUT f CYC -E-- -(100

"/

Si

120
< no

UJ

<
o
u

140
130

120

'//a

VOLTS

SINUSOIDAL

130

10

TO 400 Hz AC LINE OPERATION

MAXIMUM ON-STATE CHARACTERISTICS

(HIGH CURRENT LEVEL)

2.

SQUARE WAVE
o

INSTANTANEOUS ON VOLTAGE

MAXIMUM ON-STATE CHARACTERISTICS

50

VOLTS

90

ioo

uj
*-

90

lu
to

80

iilLL
\\\\\\\\\\\\w\

CONDUCTION
60

2 70
H 60
< 50

80
70
60 -DUT1
CYCL E

3 40
< 30
= 20
s
5 10

33/<

5% 12.5%

= 6.<

2!

0%

100%

50

<

CONDUCTION

90
120"

DC

I80

6<^<ilRCUl rs- RESISTIVE

OR NDUC nvE LOAD 50 TO 400 K 2.

DC,

s
20
3.

to

40
100
60
60
AVERAGE ON-STATE CURRENT - AMPERES

120

180

100%

50

to
t-

130

4
*

120

>

z
2

50*%

no

to
<e

25%y

CLE

12.

5
o
a.

>%/

vy/

u,

9C

<s

40

60

AVERAGE ON-STATE CURRENT

80
-

100

so

CON DUCTW*
LE = 30

70

100

120

110

DC

y /a

60
50

120

P
to

40

30

g
<

20

IS

10

vj_

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

\\\\\ J80*
CONDUCTION

*~

I
10

AMPERES

/j

i-

*~

20

90

AMPERES

I2C)

100

t-

33%

DU TY

80
-

18 O"

2 90

120

70

60

140

5.

40

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

30

AVERAGE ON-STATE CURRENT

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

<

20

10

40
70
20
30
50
60
AVERAGE ON-STATE CURRENT - AMPERES

80

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM
709

90

C50, C52

II!

0./

40

20

'O.

^^* k

~v

ieoF 30

IlAI

0.5

6B

OR

0.4

*.

DC

**<&
^f^S.%.

?V^Vv

A
/

^V///////A.

0.2

-^,>

/
0.1

-20 V, 20 1
LOAD LINE

-25C ,-40C

.1

.<

INSTANTANEOUS GATE CURRENT

.<

.!

40
-MSEC

AMPERES

GATE TRIGGERING CHARACTERISTICS

AND POWER RATINGS

8.

400

100

-SEC

10

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

ropoo

1,000

8,000

f
CVJ

6,000
UJ
a. co

CM

Q 4,000
2
S O

UJ

800

Q.

'a

5!

2P00

600

0,000
8,000

6,000

500
4,000
*2

t-

"zj

3
s

2,000

400
S
1,000

PULSE BASE WIDTH

50%/

10

33/.

000

25%

10.

in

0%/

6.25%

IIOO

i 900
o
5 800

700

DC/

180

< I00O

12.5%

800

10

SURGE (NON-REPETITIVE) ON-STATE

CURRENT

J-

900
DUTY
CYCLE

NUMBER OF CYCLES (60 Hz)

MOO

MILLISECONDS

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING

56789

120

90

60

ANGLE

30

S 700
o

600

tc

600

UJ

500
400

w,

300

o
500
a.

-t-

a 400
? 300

z
T

200

% DUTY

CYCLE

0"

Z 2o
o
2 ioo

-i-{IOC))

I00

\\l80

CONDUCTION
ANGLE

W{

UJ

I00

AVERAGE
11.

200
ON-STATE

300

CURRENT

400

500

>
<

200
300
400
AVERAGE ON-STATE CURRENT -AMPERES

IOO

AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT
WAVEFORM (EXTENDED RANGE)

12.

710

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT
WAVEFORM (EXTENDED RANGE)

500

C50, C52

OUTLINE DRAWINGS
-SEATING PLANE

..-F-.

MODEL

C52

TERMINAL

TERMINAL

TERMINAL

THREAO SIZE

GATE

ANODE

CATHODE

1/2-20 UNF-2A

1.

MM
MAX

MAX

MIN.

METRIC

INCHES

SYM

SYM.

MIN.

020 1.140 25.90 28.96

.590

.640

.058

.070

.840

.910

METRIC

MM

14

NOTES
MAX.

MIN.

98 16.26

9.90 12.70

.500

.390

INCHES
MIN
MAX

1.

460 REF

7 92 REF

l.660|l.800

42. 16 45.72

.312

.797

1.47

1.78

REE

92 REF

21.33 23.1

20.24 21.01

.827

.060

075

.385

.415

.445

485

.198

212

.425

.499

9.77 10.54

.060

32

191

1.52

1.30 12

5.02

10.79

12.67
2

1.52

1.052 1.063 26.72 27.00

5.38

NOTES:
1.

One nut and one lockwasher

supplied with each unit.

Material of hardware

cad plated.

is

steel,

area of unthreaded portion. Complete threads are within 2.5 threads of seating plane.

2.

"T" dimension

3.

Angular orientation of terminals

is

is

undefined.

INC HES

SYM

SEATING PLANE

MIN.

C50

AUX
CATHODE

GATE

CATHODE

ANODE

METRIC

MM

NOTES

MAX.

MIN.

.330

275

.325

6.98

750 39.87 4445

.065

.095

1.65

2.41

6.000 6.390 152.40 162.31

.840

.910

21.33

23.11

6.850 7,500 173.99 190.50

.425

.499

1079

12.67

.920

020

.500

.390

570

1.

.797

.827

.140

.150

20.24 21.01
3.55

3.81

.300

7.62

500

.610

12.70 15.49

.260

281

INCHES
MIN MAX.

SYM

9.90 12.70

TERMINAL TERMINAL TERMINAL TERMINAL

MET RIC
MM
MAX.

MIN.

140 25.90 28.96

MODEL

MAX

6.60

8.38
8.26

23.36

_,
1.57

.060

4
5

1.052 1.063 26.72 27.00

7.14

THREAD SIZE
1/2

20UNF-2A

NOTES:
1.

Gate and auxiliary

cathode

leads

supplied

lightly

twisted together.
2.

Flexible copper lead.

3.

One nut and one lockwasher

supplied with each unit.

Material of hardware

cad plated.

is

steel,

WITH HARDWARE

diameter of effective seating area.

4.

"Ft" dimension

5.

"T" dimension

6.

Angular orientation of terminals

is

NOTES:

is area of unthreaded portion. Complete threads are within 2.5 threads of seating plane.
is

undefined.

UNIT

OUNCES

GRAMS

C50
C52

4.25

120
99

3.50

WITHOUT HARDWARE
GRAMS
OUNCES
3.50
2.75

99
78

I
711

SCR
500
The General

Electric

Volts

C60.2

110 A RMS

C60 (2N2023-2N2030) and C62 Series

trolled Rectifiers are designed for high-current operation at

Silicon Conextreme tem-

peratures. Rated as high as 110 amperes DC

with a maximum junction
temperature of 150C they are especially suited for applications where
high ambients or small heat sinks preclude the use of other controlled

rectifiers at a required

current

level.

C60

The C60 (2N2023-2N2030) and C62 Series have guaranteed low tempera 65 C. In all other respects they are identical and offer these

ture limits of
features

Hard

Thermal fatigue resistant

soldered joints

Silicone-rubber insulated leads

Welded seals

C62

Guaranteed value of di/dt

"
1

PEAK FORWARD BLOCKING

VOLTAGE, V DRM (1)
Tc = -65Cto+145C

C60U
C60F
C60A
C60G
C60B
C60H
C60C
C60D
C60E

(2N2023)
(2N2024)
(2N2025)
(2N2026)
(2N2027)
(2N2028)
(2N2029)
(2N2030)

C62U
C62F
C62A
C62G
C62B
C62H
C62C
C62D
C62E

(DHalf sinewave waveform,

25
50
100
150
200
250
300
400
500
1

0ms max

iREPETITIVE PEAK REVERSE

j

VOLTAGE, Vrrm
T c = -65C to+145C

25
50
100
150
200
250
300
400
500

Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts

Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts

(1)

"

TRANSIENT PEAK REVERSE VOLTAGE

%SM

dl

Tc = +145C

35
75
150
225
300
350
400
500
650

Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts

duration.

RMS Forward Current, On-State

110 amperes
Average Forward Current, On-State
Depends on conduction angle (see Charts 2 and 3)
Peak One-cycle Surge Forward Current, Ijsm
1000 amperes (see Chart 7)
Maximum Rate of Rise of Anode Current During Turn-On Interval
(see Chart 9)
Pt (for fusing)
Up to 4000 ampere 2 seconds (see Chart 8)
Peak Gate Power Dissipation, Pgm
5 watts
Average Gate Power Dissipation, Pg(aV)
0.5 watts
Peak Gate Current, Igfm
2 amperes
Peak Forward Gate Voltage, Vgtm
20 volts
Peak Reverse Gate Voltage, Vqrm
5 volts
Storage Temperature,
Stud Torque

TSTG

-65C

to

+150C

125 Lbs.-in. (min.), 150 Lbs.-in. (max.)

150 Kg. -cm. (min.), 175 Kg. -cm. (max.)
712

C60, C62

CHARACTERISTICS
TEST

Symbol

Gate Trigger Current

Typ.

Max.

Units

lGT

30
50
15

75
125
25

mAdc

Gate Trigger Voltage

V.-.T

1.5

3.0

Vdc

Peak On-Voltage

V nl

2.0

2.5

Holding Current

I HO

20

100

mAdc

Min.

.25

Turn-On Time
(Delay Time
Rise Time)
Circuit

t,l

Test Conditions

= + 25C, V - 6 Vdc, R,. = 12 ohms, t > 20 M sec.

= - 65C, V = 6 Vdc, R,. = 12 ohms, t > 20 M sec.
= +145C, V = 6 Vdc, R,. = 12 ohms, t g 20 M sec.
Tc = - 65 C to +125C. V = 6 Vdc, Ri. = 12 ohms, t S
20 Msec.
Tc +145C, V = Rated, Ri. = 1000 ohms, t ^ 20 /tsec.
= 1500A Peak, Duty cycle g .01%
Tc = + 25C, I
T c = + 25C, Anode supply = 24 Vdc, Initial forward current
= 2.5A
= rated,
Tc = + 25C, Ip = 50 Adc, V

Tc
To
Tc

,,

+ tr

/xsec

Gate supply 10 volt open

0.1 /tsec. max. rise time

Commutated

80

tq

/tsec

Duty
Effective

Thermal

.3

.4

=
=
=

50A, Irm
5A min.,
50 volts min.,
(reapplied)
V|, K M
Rated,
Rate of rise of reapplied forward
voltage
20V/^sec
linear.
blocking
Gate bias: volts, 100 ohms during turn-off interval,

Tc

+125C, I

Vr =

Turn-Off Time

ohm,

circuit, 25

cycle

.01%

C/watt

Resistance (DC)

Peak Reverse and

Forward Blocking

mA

Ii,,n,

Tc

145C

and

Current

Irru

C60, C62U
C60, C62F
C60, C62A
C60, C62G
C60, C62B
C60, C62H
C60, C62C
C60, C62D
C60, C62E

13
13
13
13
13
13
13
10

15
15
15
12

15
15
15
15

I1KM

= V RKM =

25
50
100
150

200
250
300
400
500

Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts

peak
peak
peak
peak
peak
peak
peak
peak
peak

5000
ZOOO
25* C

I0O0

>

500
200

,,

**

JUNCTION TEMP
I50C

100

..

'~'T~

50
20

rs^

f\

10
I

\
5

CONDUCTION ANGLE- 30

T~

\\
60"

'conduction'

NGLE

:r

\
90*..J^_

120^^

DC

190

1.0

-"-

.5

.2

OR INDUCTIVE LOAD, 50 TO 400 Hz

.10

INCREASES TO BREAKOVER
VOLTAGE WITH ZERO GATE

VOLTAGE

_J
123456789

L_,

20

10

30

40

VEROGE

INSTANTANEOUS ON-STATE VOLTAGE - VOLTS

1.

MAXIMUM ON-STATE VOLTAGE

2.

713

50

60

70

80

90

100

FORWARD CURRENT- AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

C60, C62

^s
^-

N ^J>

\ ^>^o
DUTY CYCLE* 8.3%
16.6

%\
25%

333%

50%

80
y 70
*

60

US E THIS CURVE ONLY FOR INDUCTIVE LOAD

< 50
s
=

40

60
40
50
30
20
AVERAGE FORWARD CURRENT- AMPERES

AVERAGE FORWARD CURRENT - AMPERES

3.

4.

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

FORWARD POWER DISSIPATION FOR

SINUSOIDAL CURRENT WAVEFORM

50 %

DUTl1 CY :le- 8.3%

/
/

/
A/,

Ar V
/ V#
'*

'4,

A
jr

JNCTICMTEhIP ERA rURE = 150' c

U SE THIS CURVE ONLY FOR INDUCTIVE
3AD CIRCUITS WITH LOAD Xl_/R RATIO

c URVE 4

AVERAGE FORWARD CURRENT, AMPERES

5.

INSTANTANEOUS GATE CURRENT -AMPERES

FORWARD POWER DISSIPATION FOR

6.

RECTANGULAR CURRENT WAVEFORM

GATE TRIGGERING CHARACTERISTICS

UJ
a.

z
J 750
O

a
tr
<
*
UJ

>

<
*
UJ

JUNC TION TE APE RA TU RE-40*CT0I50' C

2 50

_J

<
I
5
a

NOTE.

(1)

FOR SUB -CYCLE SU RGE OUR ATION ILES S TM AN

C CL E

10

USE CURVE

MAXIMUM ALLOWABLE SURGE

CURRENT FOR SUB - CYCLE PULSE
WIDTHS FOR CALCULATING I* t RATINGS
NOTE SEE CHART 7 FOR PEAK CURRENT
LIMITATION DURING TURN -ON INTERVAL

20

30

40

50 60

CYCLES AT 60 CPS

7.

MAXIMUM ALLOWABLE SURGE CURRENT

PULSE TIME -MILLISECONDS

FOLLOWING RATED LOAD CONDITIONS

8.

SUB-CYCLE SURGE RATING FOLLOWING

RATED LOAD CONDITIONS

714

2,000
0.7

C60, C62

II

"^ ^

01

TT

<y, NCTION TO

n^

.'

EAT SINK

(WITH UNIT ON 1/8" COPPER FIN,

r-

''

SUPP -Y

1/4"

04

II

VOLTA

o
i

/
l0

/
<
2

^7/

600/

4.0

DC TO 4O0PPS
Tj

\/

125-C

~x
/

THES E TURN-ON CURREN1 LIMIT CURVES

DEFINE THE MAXIMUM ALLOWABLE RATE
OF CURRENT BUILD-UP THOUGH THE SCR,
FOR VARIOUS SUPPLY VOLTAGES.
800/
FOR FURTHER INFORMATION CONCERNING
di/dl, SEE APPLICATION NOTE #200 28 TITLED
"THE RATING OF SCR*S WHEN SWITCHING INTO HIGH CURRENT*

'

ilt
III

(HI
0.1

TIME

TIME FROM START OF CURRENT FLOW-Jisac

10.
9.

CURRENT

LIMIT

UNCTION TO

//

rn

zooA

FROM CELL HEX.)

IN

SECONDS

TRANSIENT THERMAL IMPEDANCE (JUNCTION TO .CASE)

FOR STEEP WAVEFORM OPERATION

OUTLINE DRAWINGS

C60 OUTLINE (Conforms to JEDECTO-94

Outline)

FLEXIBLE

TABLE OF DIMENSIONS

COPPER LEAD
Conversion Table
INCHES

DIM

MAX

.797

.827

MAX

MIN
20.243

21.005

.080

.278

.350

7.060

8.890

.874

1.030

22.099

26.162

2.032

1.049

1.062

26.644

26.975

.840

.910

21.335

23.115

6.104

6.512

157.619

165.443

G,

1.750

44.450

1.484

1.640

4.437

5.623

.275

.325

6.985

8.255

K,

.445

.485

11.302

12.319

.251

.281

6.375

7.137

L,

.198

.212

5.029

5.385

.500

.600

12.700

15.240

M,

.385

.415

9.778

10.541

.632

.725

16.052

18.390

Ni

.590

.640

14.985

16.256

7.000

7.342

177.799

186.487

C62 OUTLINE

MILLIMETERS

MIN

37.653

41.656

12.698

142.824

7.925 Ref

O!

.312 Kef.

.140

.150

3.555

3.811

?!

.060

.075

1.524

1.905

.250

Nom.

6.350 Nam.

Nam.

7.366 Nam.

.290

.065

.095

1.651

st

.058

.070

1.473

1.778

.463

.498

11.760

12.649

2.413

notes
1.

Complete stud threads ('A-20 UNF

2.

Flexible lead covered with silicon rubber insulation (Class H),

3.

Orientation of cathode

4.

One, 'A-20

5.

Approximate weights:

steel,

2A) to within 2'A threads of head.

600 volt ASTM standard wall.

and gate terminals not defined.
cadmium plated nut and one cadmium plated spring washer supplied with each
With Hardware

Unit

C60
C62

715

unit.

Without Hardware

Ounces

Grams

Ounces

Grams

4.25
3.50

120
99

3.50
2.75

99
78

C103

SCR

TYPICAL APPLICATIONS:
SENSORS

CONTROLS

Small motors
Small lamps

Temperature
Pressure

Remote

Dryness
Proximity

SWITCHING

Voltage
Current

AMPLIFIERS

Solid-state relay

Relay driver
Counter

Low power inverter

(gate)

NOTEl:

LEAD DIAMETER ISCONTROLLED IN THE ZONE BETWEEN

.050 AND .290 FROM THE

LOGIC CIRCUITS

TIMERS

SEATING PLANE BETWEEN

AND END OF LEAD A

MAX. OF .021 IS HELD.
ALL DIMENSIONS ARC IN
INCHES AND ARE REFERENCE
UNLESS TOLEftANCED.

.290

120V AC LINE OPERATION

TO-18 LEAD SPACING

FEATURES:

200 juA Gate sensitivity

8-amp surge

JTT
\

050
045

-rrrrr

30-thru 200-volt selection

Plastic

_iru

otHy

LEADS:
GATE

TO-18 package

3,

ANODE
CATHODE

Low V F
Highdv/dt

Type

.165
-IZS

MAXIMUM ALLOWABLE RATINGS

Repfi<fv6l>*ak Itemiiw
Veltaa*, Vjuui

Peak Off-State
Vekaa*, Voan"5

Rpt$tiva

typu
Tc

C103Y

C103A
C103B
^gk
3

=. 1000

Tc

= -6SCto +1C
30
60
100
200

Volts
Volts
Volts
Volts

.-..

Volts
Volts
Volts
Volts

Type

(with P-Strap)

ohms maximum.

Values apply for zero or negative

RMS

-65Cto +12SC
30
60
100
200

C103YY

On-State Current,

grate

Itcrms)

voltage only.

(all

Conduction Angles)

Peak One Cycle Surge (non-rep) On-State Current,

Peak Gate Power Dissipation, Pom
Average Gate Power Dissipation, Pguv>
Peak Positive Gate Current, Igm
Peak Negative Gate Voltage, Vgm

0.8
8.0

I TSM

1.0

Watts for

Amperes
Amperes
8.3

msec.

Watts
Amperes

0.01
0.5

8 Volts

65C
65C

Storage Temperature, T ST0

Operating Junction Temperature, Tj

716

to

to

+150C
+125C

CHARACTERISTICS
Symbol

T.rt

Peak Reverse and

Irrm

Off-State Current
(All types)

or

Igt

DC Gate Trigger
Voltage

Vgt

Peak On-State
Voltage

Typ.

Ipfc./.*;"

Vtm

****

Idrm

DC Gate Trigger
Current

C103
T*t Condition*

Unit*

Tc = +25C, Rgk = 1000 ohms

Vrrm = Vdrm = Rated Value.

/xA

1.0

Tc = +125C, Rok = 1000 ohms

Vrrm = Vdrm = Rated Value.

50

200

= +25C, Vd = 6Vdc,
= 100 ohms.
=
T c -65C, Vd = 6Vdc,
Rl = 100 ohms.
Tc = +25C, Vd = 6Vdc,
Rl = 100 ohms.
Tc = -65C,V D = 6Vdc,
Rl = 100 ohms.
T c = + 125C, Rated Vdrm,
Rl = 1000 ohms.
Tc = +25C, Itm = 1.0A peak,
Tc

juAdc

Rl

500

Vdc

0.8

1.0

0.1

1.5

msec, wide pulse,

Duty Cycle
Holding Current

= 12Vdc,
= 1000 ohms.
T c = +25C
T c = -65C
Tc = +125C, Rated Vdrm,
Rgk = 1000 ohms.

mAdc

Ih

g2%

Anode source voltage

Rgk

5.0

Critical

Rate of

dv/dt

10.0

20

V//isec

Rise of OffState Voltage

Circuit

Commutated

15

t.

Tc = 4-125 C, rectangular current

waveform. Rate of rise of current
<10A/Vsec. Rate reversal of cur-

/isec

Turn-Off Time

=
=

rent <5A//tsec. Itm

1A (50 /tsec.
pulse) Rep. Rate
60 pps. Vrrm
= Rated, Vrx = 15V Min., Vdrm
Rated. Rate of Rise of reapplied
off-state voltage
20V/ jusec. ; Gate
Bias =
Volts, 100 Ohms (during
turn-off time interval).
.

Rc

Steady-State

Thermal Resistance
RflJA

"

Rmc

C/W

125

Junction-to-case (flat side of case

is

temp, ref point)

.

230

Junction-to-ambient
tion)

110

(free

convec-

Junction to P-strap dissipator

(rounded

surface

temp.

is

ref.

point)

RwA

170

Junction-to-ambient, with P-strap

dissipator (free convection).

NC tes:

1.

2.

JUNCTION TEMPERATURE
FREQUENCY =50 TO 400

- +12

5C

Hz.

DC
JUNcno N

rEM PER TU 1E>

+J2

180

^ + 25- C
1

20

90"

soy
ANGLE

30

/]

'1

C)*

^^
If

"

0.3

0.4

AVERAGE ON-STATE
i

MAXIMUM ON-STATE

O"

ONOU CTION

0.6

CURRENT- AMPERES

INSTANTANEOUS ON- STATE VOLTAGE -VOLTS

I.

0.5

2.

CHARACTERISTICS
717

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

C103
1

NOTES
N OTES

(RESISTIVE OR INDUCTIVE LOAD, 50 TO 400

2.RATINBS DERIVED FOR 0.01 WATT AVERAGE

no

3.

Hz.

GATE POWER DISSIPATION.

CASE TEMPERATURE MEASURED AT CENTER OF

IE

<_>

HO

100

t-

90

1 90

0-

UJ

a.

80
K

CD

<

C 0NDUCTI0N

0*

i*

90"

3 50
*

IE

V.

ISO-

20

CONDUCTION

10

10

60'

Of

Xsc"

AVERAGE ON-STATE

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM-

CURRENT -AMPERES

WITHOUT P-STRAP DISSIPATOR

130

130
1

NOTES

120

1.

3.

RESISTIVE OR INDUCTIVE LOAD SOTO 400Hz.

120

WATT AVERAGE

2 RATINGS DERIVED FOR 0.01

"VDC

\|80"

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM-

4.

WITHOUT P-STRAP DISSIPATOR

I2CF

0.3

0.2

AVERAGE ON-STATE CURRENT -AMPERES

GATE POWER DISSIPATION.

UNIT WITH P-STRAP DISSIPATOR IN FREE
CONVECTION. AMIENT, IN ANY ORIENTATION.

2-

RATINGS DERIVED FOR

0.01

WATT AVERAGE

u no
P-STRAP DISSIPATOR
CONVECTION AMBIENT, MOUNTED
ANY ORIENTATION.

<r

fe

SURFACE OF P-STRAP DISSIPATOR.

3 UNIT WITH
too

cc

IN

FRES

IN

UJ

90

<

^-CONDUCTION

30

DC^

o.

0"

<
20

^CONDUCTION

120

30

v\

UJ

180"

60

60

$ 70
CD
s
< 60

<

RATINGS DERIVED FOR 0.01 WATT AVERAGE

GATE POWER DISSIPATION.
3. UNIT MOUNTED
WITH LEADS VERTICAL IN
FREE CONVECTION AMBIENT AIR.

2.

90

80
*

S 70

0"

18

0"

a.
uj

60

AN GLE

30"

CO

CONDUClriON

| 50

<

60"

o
< 40
Z
a
x

w 60

ECTIO

|
90"

12 0"

ISO"

30

50

< 40
X
i 30
X
<
X 20

S 20

0"

i^\
180"
'

30"

ANC LE

JONDUCTtON
60"

DC*

10

10

90"

120"!
1

0.3

0.2

0.1

AVERAGE ON-STATE CURRENT -AMPERES

\|80"

DC>

0.5

0.4

0.7

0.6

0.8

AVERAGE ON-STATE CURRENT -AMPERES

MAXIMUM ALLOWABLE

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM-

P-STRAP TEMPERATURE
FOR SINUSOIDAL CURRENT WAVEFORMNO EXTERNAL HEATSINK

WITH P-STRAP DISSIPATOR

130

NOTES

RESISTIVE OR INDUCTIVE LOAD

50 TO 400

Hz

N >tes:

"

GATE POWER DISSIPATION.

3 UNIT WITH P-STRAP DISSIPATOR BOLTED TO
EXTERNAL HEATSINK USING MOUNTING HOLE IN
P-STRAP. TEMPERATURE MEASURED ON ROUNDED

110

UJ
<r

3.

110

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz.

RATINGS DERIVED FOR 0.01 WATT AVERAGE
GATE POWER DISSIPATION.
UNIT MOUNTED IN CENTER OF SQUARE OF

EPOXY ADHESIVE. FLAT SIDE OF UNIT AGAINST

HEATSINK.

100

100

FROM

CE
UJ

2.

120

120

1.

5.

90

90

^So4

0"

CONDUCTION

le

\
0"

90"

Z
12 0"

UNIT.

SINUSOIDAL CURRENT WAVE FORM.

ONDU CTIO H

NGLE 30*

iO*

0"

90*

v
/

12 )
ISO'

CONDUCT )N
0*

180"

,60"

LDUCTK

DC*

0.1

0.2

0.3

0.4

0.5

0.6

0.7

*8.

AVERAGE ON -STATE CURRENT -AMPERES

MAXIMUM ALLOWABLE

.1

C .3

AVERAGE ON-STATE CURRENT -AMPERES

P-STRAP TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORMMOUNTED TO EXTERNAL HEATSINK

Chart

718

TYPICAL CURRENT CARRYING CAPABILITY

FOR DEVICE MOUNTED ON \"x\"xW
ALUMINUM HEATSINK
8.

For Reference only, units are not available

in this configuration.

C103

III

PRIOR TO SURGE

* 200

-65*C TO +I25C

'

-JUNCTION TO AMBI ENT.IFREE AIR LEADS VERTICAL)

3.JUNCTI0N TO CASE, MEASURED AT CENTER OF FLAT SIDE.
4 JUNCTION TO P-STRAP, WITH P-STRAP DISSIPATOR IN
5.

FREE AIR (ANY ORIENTATION)

JUNCTION TO P-STRAP, WITH P-STRAP DISSIPATOR
MOUNTED TO EXTERNAL HEATSINK (TEMPERATURE IS
MEASURED ON ROUNDED SURFACE OF P-STRAP
DISSIPATOR

).

(MOUNTED TO ALUMINUM PLATE

AS DESCRIBEO ON CHART 5 ).
FREE AIR REFER! TO FREE CONVECTION AMBIENT.

6 JUNCTION TO HEATSINK

O.OOI 0,002 0.004

10

40

60

0.0

0.04

0.02

I00

O.I

TIME

0.2
IN

0.4

SECONDS

CYCLES AT 60 Hz

9.

MAXIMUM ALLOWABLE SURGE

10.

MAXIMUM TRANSIENT THERMAL

(NON-REPETITIVE) ON-STATE CURRENT

IMPEDANCE

100
1

so

NOTES

1.

II II

TEMPERATURES INDICATED ON CURVES

CO
2.
3.

40

ANODE SUPPLY VOLTAGE 12 VOLTS DC.

CAUTION OFF-STATE VOLTASE RATIN8
(V DRU ) DOES NOT APPLY FOR SATE TO
CATHODE RESISTANCE 8REATER THAN
1000 OHMS.
:

"J2*;4r- sT
"^^

j**r^
i+e

c
r

_
t&
s^<>.
0.8

^>S^>,Jfe

0.6

'<*>

>^
1

~^SfJ-^

'*

\<
KX>

200

400 COO 00 IK
2K
4K
BATE TO CATHODE RESISTANCE - OHMS

SK

CK

KM

11. MAXIMUM AND MINIMUM HOLDING CURRENT

VARIATION WITH GATE TO CATHODE RESISTANCE

719

Silicon Controlled Rectifier

Flat

Pack Design

Model C106

Up to 600

Volts

4 Amperes (RMS)

PRODUCT FEATURES
The Type C106

(SCR)

Silicon Controlled Rectifier

has the following outstanding features

C106
TYPE 4

LOW COST
C106
SENSITIVE
Operates directly from low signal
sensors such as thermistors, photo-conductive

TYPE 2
cells, etc.

VERSATILE

Designed for a variety of mount-down

printed circuit, plug-in socket, screws,
or point-to-point soldering

methods

C106
TYPE

C106
1

TYPE 3

RUGGED, COMPACT
in rectangular

Uses a solid plastic encapsulant

shape for high density packaging
(FULL SIZE)

TYPICAL APPLICATIONS
MOTOR CONTROL

REMOTE CONTROL

Electric Model Trains

LIGHT

Home

Moving-Light Signs (Chasers)

Driver for Computer Readout

DRYNESS

Clothes Dryness Sensor

PROXIMITY

Burglar Alarm
Touch Switch
Electric Door Openers

COUNTING

Low Speed Ring Counters

Lights

Harbor Buoy Flashers

Automotive Warning Systems
TEMPERATURE

& Neon Drivers

Shift Registers

Range Surface Unit (Hybrid)

Chemical Processing
(

Photographic,

SWITCHING

etc.

Food Warmer Tray

Bearing Temperature Sensor
Electric Blanket Control

PRESSURE

TV Control

Garage Door Openers

Power Switch

Flame Detectors

Nixie

Armchair

Master Switching Stations for

Sewing Machines
Movie Projectors
Food Mixers
Electric Fans
Slot Racing Cars

Relay Replacement
Solenoid Drivers
Latching Relay Replacement
Power Flip Flops

Low Power Inverters

Auto Oil Pressure Gage

Hot Water Boiler Safety Monitor

Thyratron Tube Replacement

AMPLIFIERS

Gate Amplifier for Larger SCR's,

Triacs

TIME

Photo Darkroom Exposure

Blenders

Oven Timer
Vending Machine Logic

Hand Tools

Industrial Process Control

LIQUID LEVEL

Basement Sump Pump

Automatic Coffee Maker
Automatic Shutoff for Vending
Machines
720

IGNITION

Small Gas Engines

Gas Appliances

DETECTION

Voltage (Battery Charger)

Current (Crowbar)

MAXIMUM ALLOWABLE RATINGS

C106
Working and Repetitive

Repetitive Peak Forward Blocking

Voltage,

Peak Reverse Voltage*,

and v ROIVl' re P>
Tj = -40Cto+110C

VpxM

Type

Rq k

= 1000

VROM< wk8)

Ohms

Tj = -40Cto+110C

C106Q1, C106Q2, C106Q3, C106Q4

15 Volts

15 Volts

C106Y1, C106Y2, C106Y3, C106Y4

30 Volts

30 Volts

C106F1, C106F2, C106F3, C106F4

50 Volts

50 Volts

C106A1, C106A2, C106A3, C106A4

100 Volts

100 Volts

C106B1, C106B2, C106B3, C106B4

200 Volts

200 Volts

C106C1, C106C2, C106C3, C106C4

300 Volts

300 Volts

C106D1, C106D2, C106D3, C106D4

400 Volts

400 Volts

C106E1, C106E2, C106E3, C106E4

500 Volts

500 Volts

C106M1, C106M2, C106M3, C106M4

600 Volts

600 Volts
4 Amperes
50 Amperes/Microsecond
75 Amperes*

RMS

Forward Current, On-State

Rate of Rise of Forward Current (non-repetitive), di/dt (See Chart 9)
Peak Forward Current, On-State (repetitive)
Peak One Cycle Surge Forward Current, Non-Repetitive, Ifm (surge)

I 2t

20 Amperes

(for fusing)

Ampere 2 seconds

0.5

15 ^usec.

Watt
Watt
Amperes
0.1

0.2

6 Volts
.

maximum

rating applies for operation at 60 Hz, 75C

minimum,

1.5 Milliseconds

Storage Temperature, Tstg

Operating Temperature
10 /isec,

>

0.5

Peak Gate Power, Pgm

Average Gate Power, Pg(av)
Peak Gate Current, Igfm
Peak Reverse Gate Voltage, Vgrm

This

(for times

tab (or anode)

-40C
-40C

to

+ 150C

to

+110C

lead temperature, switching: from 80 volts peak, sinusoidal current pulse width

maximum.

10

/
t

M
#
y

<

/
1

o
<r
<
*

o.i

- JUNCTION TEMPERATURE
E

JUNCTION TEMPERATURE

25'C

0*C

0.01

INCREASES TO FORWARD
BREAKOVER VOLTAGE

1.0

2.0

4.0

3.0

INSTANTANEOUS ON-VOLTAGE-VOLTS
1.

Maximum Forward

Characteristics,

721

On

State

C106
I

NOTES:

JUNCTION

(1)

TEMPERATURE

50 TO 400

//

NO C

*
a
<

'

Hi.

8
6

V\

MAXIMUM GATE TRIGGER

<^CURRENT AT-40'C

V,

3 08
-

CURRENT AT +28

W 04

DC ON-STATE

CURRENT
'

^t-ilr^*'c

ZTTi

'

HALF SINE WAVE

ON-STATE CURRENT

o.i

Ofl

NOTE

APPLIES FOR RECTANGULAR TRIGGER >ULSES

/
J

0.4 0.6

0.1

6 6

40 60 100

20

10

200

GATE PULSE WIDTH - MICROSECONDS

3.

Maximum Gate Trigger Current

yy

and Voltage Variation with

Trigger Pulse Width

OS

0.4

16

1.2

2.0

2.4

AVERAGE OR DC ON-STATE CURRENT

2.

Maximum

2.8

3.2

3.6

AMPERES

On-State Power Dissipation

CHARACTERISTICS
Test

Reverse or Forward
Blocking Current
(All Types)

Symbol

Min.

Irrm

Typ.
0-1

Max.

Units

/M

V RRM = V DRM = Rated Value.

T L = 25C, R GK = 1000 Ohms

100

jUA

V RRM

or

'drm
10

Test Conditions

10

TL

DC Gate Trigger
Current

30

200

/JAdc

500

/iAdc

TL

Gate Trigger

0.4

0.5

0.8

Volts

DC

Voltage
0.5

1.0

0.7

Volts

DC
0.2

Peak On- Voltage

2.2

=6Vdc, R L
Ohms

VD

= 1000

T L =25C, VD =6 Vdc, R L
R GK = 1000 Ohms

Critical

Rate of

II

dv/dt

On Time

Circuit

Commutated

= 100

Ohms

T L = 25C,

TM =

4 Amperes Peak,
Wave Pulse,

Wide

1.0

3.0

mAdc

T L =25C, V D

2.0

6.0

mAdc

TL =

-40C,

VD

0.14

0.6

2.0

mAdc

T L =110C, V D

0.3

1.5

4.0

mAdc

T L =25C, V D

0.4

3.0

8.0

mAdc

TL

Volts/

TL =
R GK

Micro-

Blocking Voltage

Turn

Ohms

= 100

Volts

0.4

Ohms

T L =110C, V D = Rated V DRM Value

R L = 3000 Ohms, R GK = 1000 Ohms

0.3

Rise of Forward

= 100

T L = -40C, V D =6 Vdc, R L
R GK = 1000 Ohms

2 Millisec.

Latching Current

RL

Ohms

Ohms

Single Half Sine

Holding Current

= 6 Vdc,

= 100

DC

Volts

'TM

= 1000

= -40C,

Rqk
DC

= V DRM = Rated Value.

10C, R GK = 1000 Ohms.

T L =25C, V D

R GK
75

= -40C,
1 1

0C,

= 1000

R GK

= 12 Vdc,

= 12 Vdc,

VD =
Ohms

Rated

Ohms

= 1000

= 1000

R GK

= 1000

V DRM

Value

= 12 Vdc,

Ohms

= 1000

R GK

R GK

= 12 Vdc,

= 1000

R GK

= 12 Vdc,

Ohms

Ohms
Ohms

second
td+t,

1.2

40

100

Turn-Off Time

= 25C, Rated V OBM Value

T =1 Ampere, Gate Pulse = 4 Volts,
300 Ohms, 5 Microseconds Wide.

Microseconds

TL

Microseconds

TL

= 1 10C, rectangular current waveform,

Rate of rise of current < 1 amps//Usec.
Rate of reversal of current <5 amps/Alsec.
It = 1 Amp (50/Jsec pulse). Repetition
= Rated.
Rate = 60 pps.
V R = 15 Volts Minimum. V D = Rated.
Rate of Rise Reapplied Forward
Blocking Voltage = 5 Volts/fisec.

Vrrm

Gate Bias =

Volts,

100

Ohms

(during turn-off time interval).

The lead temperature (TjJ Is measured in the center of the tab, 1/16 inch from the lx>dy on Type
of the anode lead, 1/16-inch from the body on Type 2 and Type 4 devices.

the center

Ill

and Type 3

devices,

and

400 6001000

C106
120

NOTES

(3)

(^
\i

(1)

(4)

SO
1

RESISTIVE

OR INDUCTI VE LOAD.

AVERAGE GATE POWER DISSIPATION.

TEMPERATURES ARE MEASURED 1/16"
FROM BODY ON EITHER TAB OR
ANODE LEAD AS INDICATED.
TAB VERTICAL IN FREE AIR,

TYPES
AND 3 ""
TAB TEMP.
1

'ambient temp.

20

AND
AMBIENT
V -TYPES
NOTE
\

4.

Maximum Allowable Temperatures

Wave On-State Current

5.

CURRENT -AMPERES

ON-STATE

DC

WAVE)

2 AND 4
ANODE LEAD TEMP

TEMP.
4)

(SEE
1

AVERAGE ON-STATE CURRENT-AMPERES (HALF SINE

TYPES

Maximum Allowable Temperatures

DC On-State

for

for Half Sine

Current

1
|
|

1
;

i
i

NOTE S

CURVES SHOWN ARE FOR VARIOUS

JUNCTION TEMPERATURES.

(1)

\^

VOLTS

IZ)

ANOOE SUPPLY VOLTAGE

(3)

CAUTION: STANDARD FORWARD BLOCK NG

VOLT IGE RATING DC ES NOT AP PLY F 3R
GATE TO CATHODE RESISTANCE5 GRE OTER
THAN KXJO OHMS

12

NOTE-

200

/^

(I)

(2)

100

23* C

THERMAL IMPEDANCE FROM JUNCTION TO

AMBIENT FOR TYPES AND 3 APPLY

\2L
'

80
60

<.
i.

MO
E AIR- FOR TYPE 2
ITION IN FREE AIR.

40
VT

TA AND ANODE LEAD R EFERE VCE

POINTS ARE 1/16 INCH FROM DEVICE 800Y.

JUNCTION TO AMBIENT TYPES Z84v

AND 4

IN

ANY

rill

JUNCTION TO ANODE LEAO-

20

TYPES

8 4

JUNCTION TO TAB -TYPES 183

10

6
MAXIM JM AT

IK

^V
2

NIMU M A T - 40*C

0.001

002 0.004

001

0.04

0.02

).l

"*^\

M NIMUM AT

(NIMUM AT

5-C

7.

IN

10

20

40

SECONDS

Transient Thermal Impedance

X\

io'c-3

4000 6000 / 10000

600 800 ICOO
ZOOO
GATE TO CATHODE RESISTANCE -OHMS
400

6.

Maximum

04

02
TIME

Maximum and Minimum

Holding

Current Variation with External

Gate-to-Cathode Resistance

UJ

a 100
80
4
UJ

t-

Z
UJ
a.
a:

o
UJ
a
o
z
<
o
<

NOTES:

(I)

DC TO 400

P.RS.

JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO TURN-0N-40*C

(2)

TO +IIOC.

S
E

SWITCHING FROM
RATED VOLTAGE.
(4) GATE SUPPLY! 5 VOLT_
OPEN CIRCUIT, 300 OHM,
I5u SEC SQUARE WAVE

(3)

PULSE, RISE TIME=0.l|i.

SEC MAXIMUM.

INSTANTANEOUS VALUE OF ANODE CURRENT

-MUST NEVER EXCEED TURN-ON CURRENT
LIMIT LINE SHOWN.

8 10

CYCLES AT 60

8.

20

40

60

0.2
0.4
06 08
2
4
6
8 10
TIME FROM START OF CURRENT FLOW- MICROSECONDS

C.RS.

Maximum

Allowable Non-Repetitive
Peak Surge Forward Current

9.

723

Turn-On Current Limit

C106
The C106, because of

MOUNTING METHODS

unique package design, is capable of being mounted in a variety of methods;

depending upon the heatsink requirements and the circuit packaging methods.
The leads will bend easily, either perpendicular to the flat or to any angle, and may also be bent, if
desired, immediately next to the plastic case. For sharp angle bends (90 or larger), a lead should be
bent
only once; since repeated bending will fatigue or break the lead. Bending in other directions may be
performed as long as the lead is held firmly between the case and the bend, so that the strain on the lead is
not transmitted to the plastic case.
its

The mounting tab may also be bent or formed into any convenient shape so long as it
between the plastic case and the area to be formed or bent. Without this precaution, bending
the plastic case and permanently damage the unit.

As a

Any

service to its customers, the General Electric

of the derived types

shown

Company

is

held firmly
fracture

may

provides a lead and tab shaping capability.

from the factory to original

in the following chart are available direct

equipment manufacturers.
DERIVED TYPES
(The types shown below are derived from the
basic types illustrated in the left-hand column.)

BASIC TYPES

PRINTED CIRCUIT BOARD

MOUNTING

RIVET OR SCREW MOUNTING TO FLAT SURFACE

(Upright or Flat)

1-7

.080
6-.332REF.

D
b*

J
C106 Type

465 REF

Li

CI 06 Type 11

/Dl

CI 06 Type 12

.120

.080
b- .332 REF.

...120

T
b

C106Type2

C106 Type 21

o
I
-S8b- .465 REF

C106Type3

C106 Type 32
.420
,

CI 06

".380

:_>
^\

I
CI 06 Type 4

C106 Type 41

724

CONVERSIONS

INCHES

MILLIMETERS

120

3.048

.080

2.031

.160

.120

.193 REF.

INCHES

MILLIMETERS

.332 REF.

8.433 REF.

4.064

.420

10.668

3.047

.380

9.651

4.902 REF.

.465 REF.

11.811 REF.

C106

SIMPLE TEST CIRCUIT FOR THE C1Q6 SCR*

Gate Trigger Voltage and Current Measurement

RESET- NORMALLY CLOSED PUSHBUTTON

-ol o

GE
AI4B

w^<"
I00

\4

V _ 0-10 volt DC meter

V GT 0-1 volt DC meter
I GS 0-lmA DC milliameter
t

Rl

IK potentiometer

To measure gate trigger voltage and current, raise gate voltage (V G t)

from 6 volts to 1 volt. Gate trigger voltage is the reading on V GT just prior
current I Gt can be computed from the relationship
Igt

Ic

GT

until

meter reading Vi drops

Gate trigger

to V\ dropping.

amps

1000

where I G s is reading (in amps) on meter just prior to Vj dropping.

tive quantity (trigger current flows out from gate lead).

For more sophisticated equipment

"Using

Low Current

suitable for testing the

C106

SCR

NOTE

see

GE

I GT

may

turn out to be a nega-

Application Note 200. 19

SCR's".

I
725

CIRCUIT DESIGN

C106
1

Use of Gate Resistor

The C106 SCR is guaranteed to block rated voltage over its rated operating temperature range only if
a resistance of not more than 1000 ohms, or equivalent, ** is connected between its gate and cathode terminals as follows

ANODE
GATE
o-

IK.OR
LESS

CATHODE

** For alternative acceptable gate biasing methods see Application Note

2.

"Using Low Current SCR's".

200. 19

Suppression of Rate Effect

In circuits where the C106

is

applied suddenly with a switch,

C should be

ing spontaneously.

subjected to fast rising anode voltages, as for instance where voltage is

"slow down" niters may be required to prevent the SCR from trigger-

RC

selected in conjunction with

RL

so that dv/dt

is less

than 10 volts per micro-

second thus

DV
^DT

V
< lOV/u
nS

R L (LOAD RESISTANCE)

t~(R l *C)
(The 10 ohm resistor limits turn on current through the

SCR

to

a safe value

when

the

SCR

turns on.)

OUTLINE DRAWINGS
N0TE:I.6ATE LEAD
2. ANODE.

C1M CONVEMIONS

.400 _

MIU.IMETIM

INCMEf

it;

"^

In

nu

.070

i.m

IS

"Hr?

xn

1114

IT?

ts

260
.026

.240

.135

Ti5"3_

.019

- SEE

TT

.520

4.311

.054
.046

-SEE
NOTE 2

J -26P- L.030^_J_240T
050

.297 i

*WM

..260

.240

.050

lii

Til?

lit

T5S5

71*7

.420

"

.480

.385 .320
.366 310

SEE
NOTE-

iS

ITS

ADJACENT TO CHAMFER.

CONNECTED TO CENTER
LEAD (ANODE) INTERNALLY.

"55
1

T3S

IS

3. CATHODE.
4. TAB IS DIRECTLY

.360

7IS

.400

V070X45-REF
CHAMFER

NOTE3

NOTE

i2*

.030

SEE NOTE

j*i
.J7I

.105
is!

"TTi7

.410

I0.W1

.095

lit

.050

.297

.050
.030

105

.095

J054

d90L_
.iro

.400

U1M
Tili

CI06 TYPEZ

CI06TYPEI

726

CI06 TYPE 3

CI06 TYPE 4

REPRESENTATIVE APPLICATIONS OF THE C106 SCR

1.

Emergency

C106

Light

This simple circuit provides battery operated emergency lighting instantaneously upon failure of the
regular AC service. When line power is restored, the emergency light turns off and the battery recharges
automatically. The circuit is ideal for use in elevator cars, corridors and similar places where loss of light due
to power failure would be undesirable. Completely static in operation, the circuit requires no maintenance.

power "on", capacitor CI charges through rectifier CR1 and resistor Rl to develop a negative DC voltage at the gate of the C106Y SCR. By this means the SCR is prevented from triggering, and
the emergency light stays off. At the same time, the battery is kept fully charged by rectifier CR2 and resistor R2. Should the AC power fail, CI discharges and the SCR is triggered on by battery power through
resistor R3. The SCR then energizes the emergency light. Reset is automatic when AC is restored, because
the peak AC line voltage biases the SCR and turns it off.

With

AC

ICR2-GE A40F
SE
CI06Y

SE
LAMP

SCR

R2-CURRENT LIMITING
AS REQUIRED

1073

240/120
VOLTS AC

w\

CI

IOOMF
18V

R3
IK

Rl

12

VOLT BATTERY

100

CRI

GE AI4F
ALL RESISTORS

240/120112.6 VOLT

WATT
EXCEPT AS
NOTED

1/2

TRANSFORMER

2.

Universal Motor Speed Control

This circuit can replace the carbon-pile speed controller commonly supplied with household sewing maAC-DC motors, such as those found in food mixers
and similar traffic appliances. Maximum current capability is 1.5 amps. Provision of speed-dependent feedback gives excellent torque characteristics to the motor, even at low speeds where other types of controllers
are completely ineffective.
chines. It is equally effective for use with other small

The resistor capacitor network R1-R2-C1 provides a ramp-type reference voltage superimposed on top
of a DC voltage adjustable with the speed-setting potentiometer R2. This reference voltage appearing at
the wiper of R2 is balanced against the residual counter emf of the motor through the SCR gate. As the
heavy loading, its counter emf falls, and the reference ramp triggers the SCR
More voltage is thereby applied to the motor causing it to pick up speed again. Performance with the C106 SCR is particularly good because the low trigger current requirements of this de-

motor slows down due

earlier in the

AC

to

cycle.

vice allow use of a flat top reference voltage,

which provides good feedback gain and

close speed regulation.

Line

120V
47K

240V

Rl

R2

10K

R3

IK

20K
IK
1/iiF, 100V
0.1/iF, 50V
1N5060
1N5060
C106D1

Voltage

Ci
MIXER.

SEWING
MACHINE.OR
SIMILAR

UNIVERSAL

MOTOR
(MAX. CURRENT
I.S

AMP)

C2
Di

D2

SCR

l^F r 50V
0.1 pf,

50V

1N5059
1N5059
C106B1

100K

Note

Cj optional, contributes to performance in some circumstances.

Neither the disclosure of any information herein nor the sale of semiconductor devices by General Electric Company
conveys any license under patent claims covering combinations of semiconductor devices with other devices or elements. In the
absence of an express written agreement to the contrary, General Electric Company assumes no liability for patent infringement
arising out of any use of the semiconductor devices with other devices or elements by any purchaser of semiconductor devices
or

by

others.

727

Silicon Controlled Rectifier

Flat

Pack Design

Model C107

Up

600

to

Volts

4 Amperes (RMS)

PRODUCT FEATURES
The Type C107

Silicon Controlled Rectifier

(SCR)

has the following outstanding features

C107

LOW COST

TYPE 4

C107
TYPE 2

VERSATILE

Designed for a variety of mount-down

printed circuit, plug-in socket, screws,
or point-to-point soldering

methods

C107
TYPE

C107

_]

TYPE 3

RUGGED, COMPACT
in rectangular

Uses a solid plastic encapsulant

shape for high density packaging
(Mill SIZE)

TYPICAL APPLICATIONS
MOTOR CONTROL

REMOTE CONTROL

Electric Model Trains

Master Switching Stations for

Sewing Machines
Movie Projectors
Food Mixers
Electric Fans
Slot Racing Cars
LIGHT

Armchair TV Control

Home
Garage Door Openers
Power Switch

Flame Detectors
Moving-Light Signs (Chasers)
Driver for Computer Readout
Lights
Harbor Buoy Flashers

DRYNESS

Clothes Dryness Sensor

PROXIMITY

Burglar Alarm
Touch Switch
Electric Door Openers

COUNTING

Low Speed Ring Counters

Automotive Warning Systems

Nixie.

TEMPERATURE

& Neon Drivers

Shift Registers

Range Surface Unit (Hybrid)

Chemical Processing
(Photographic,

SWITCHING

etc.)

Food Warmer Tray

Bearing Temperature Sensor
Electric Blanket Control

PRESSURE

Relay Replacement
Solenoid Drivers
Latching Relay Replacement
Power Flip Flops

Low Power Inverters

Auto Oil Pressure Gage

Hot Water Boiler Safety Monitor

Thyratron Tube Replacement

AMPLIFIERS

Gate Amplifier for Larger SCR's,

Triacs

TIME

Blenders
Hand Tools

Photo Darkroom Exposure

Oven Timer
Vending Machine Logic

Industrial Process Control

UQUID LEVEL

Basement Sump Pump

Automatic Coffee Maker
Automatic Shutoff for Vending
Machines
728

IGNITION

Small Gas Engines

Gas Appliances

DETECTION

Voltage (Battery Charger)

Current (Crowbar)

MAXIMUM ALLOWABLE RATINGS

Repetitive

Peak

Voltage,

Type

R,.

T,.

RMS

On-State Current, I T , S
Repetitive Peak On-State Current,

Vm M
.

1000 Ohms

=' K 40 C

C107Q1, C107Q2, C107Q3, C107O4

C107Y1, C107Y2, C107Y3, C107Y4
C107J 1. C107I2, C107I-3, C1071-4
C107A1, C107A2, C107A3, C107A4
C107B1, C1071S2, C10TB3, C107B4
C107C1, C107C2, C107C3, C107C4
CI07D1, C107D2, C107D3, C107D4
C107E1.C107K2. C107K3, C107F4
C107M1, C107M2, C107M3, C107M4

C107
Working and Repetitive
Peak Reverse Voltage,
V HWM and V 1II1M
40C to + 110C
T,. =

Off-State

to -f-llO^C

Volts

15 Volts

30 Volts

30 Volts

Volts

50 Volts

100 Volts

100 Volts

200 Volts

200 Volts

300 Volts

400 Volts

300 Volts
400 Volts

500 Volts

500 Volts

hOO Volts

600 Volts

Sil

Critical Rate-Of-Rise of

50 Amperes/ Microsecond
15 Amperes
0.5 Ampere^ seconds
- 5 Watts

On-State Current, di/dt (see Chart 8)

Peak One Cycle Surge (non-rep) On-State Current, I TSM
Ft (for fusing), for times ;_- 1.5 milliseconds
Peak Gate Power Dissipation, P, iM
Average Gate Power Dissipation, P, 1V
Peak Positive Gate Current, !<,
Peak Negative Gate Voltage, V (:M
;i

Amperes

75 Amperes

I t1; m

0.1 \\ atts
0.2 Amperes

6 Volts

40C to + 150 C
40C to -r-110C
r

Storage Temperature, T ST(

Operating Temperature, T.,
;

tTfcis rating applies for operation at no Hz, ?5"C maximum tab (or amnio lead) temperature, switching from SO volts peak,
sinusoidal current pulse, width 10 fisrc. minim/em, 15 psec. maximum.

CHARACTERISTICS
Test

Peak Reverse
and Off-State
Current
(All Types)

Symbol

Min.

Irrm

Typ.
0.1

Trigger

10

MA

Vrrm

V DRM

= Rated Value.
= 1000 Ohms

Idrm

MA

100

500

'GT

/JAdc

VG 7

0.4

0.5

Voltage
0.2

Peak On-State
Voltage

2.2

2.5

Rated Value.

TL

= 110C,

TL

= 25C,

Gate Trigger

T L = 25C, R GK

Current

DC

Test Conditions

Units

or

10

*DC Gate

Max.

R GK

VD

= 1000 Ohms.

= 6 Vdc,

RL

= 100 Ohms.

RL

= 100 Ohms.

1000 Ohms.

GK

Volts

T L = 25C,

DC

R GK

Volts

TL

DC

RL

Volts

T L = 25C,

VD

= 6 Vdc,

= 1000 Ohms.

= 110C, Rated V DRM

= 3000 Ohms, R GK = 1000 Ohms.
1

TM

Single Half Sine

= 4 Amperes Peak,
Wave Pulse,

2 Millisec. Wide.

Holding Current

0.3

2.0

6.0

mAdc

TL

= 25C, Anode Supply = 12 Vdc,

= 1000 Ohms.

R GK
0.14

1.2

4.0

mAdc

TL

R GK
Latching Current

Critical

Rate of

0.3

II

dv/dt

3.0

8.0

Rise of Off-State

Voltage

Turn-On Time

0C, Anode Supply =

= 1000 Ohms.
1 1

mAdc

T L = 25C, Anode Supply

R GK = 1000 Ohms.

Volts/

TL

Micro-

R GK

= 110C, Rated

2 Vdc,

= 12 Vdc,

V DRM

= 1000 Ohms.

second
td

tr

Micro-

1.2

seconds

T L =25C, Rated V DRM

'tm = 1 Ampere, Gate Pulse = 4

Volts,

300 Ohms, 5 Microseconds Wide.

Circuit

40

100

Micro-

Commutated

seconds

Turn-Off Time

TL

= 110C, rectangular current waveform,

Rate of Rise of current < 10 amps/jlisec.
Rate of reversal of current < 5 amps/'/Usec.
= 1 Amp (50|lsec. pulse). Repetition

'tm

Rate = 60 pps. Rated V R rm

= 15 Volts Minimum. Rated

VR

Vqrm

Rate of Rise Reapplied Forward

Blocking Voltage = 5 Volts/jlsec.
Gate Bias =
Volts, 100 Ohms

(during turn-off time interval).

The lead temperature (TjJ is measured in the center of the tab, 1/16 inch from the body on Type 1 and Type 3
of the anode lead, 1/16 inch from the body on Type 2 and Type 4 devices.
*Devices with an Iqj max. of 1 mA and 2mA are available as CI 7-X1, or CI 7-X2 at reduced prices.

the center

729

devices,

and

in

10

C107
4j0

JUNC
TE
110

//

'ION

7
^25

0.4

NOTES:

|
|

I.JUNCTION

//

0.2

TEMPERATURE- NOC

0.1
J

HALF SINE WAVE

ON -STATE CURRENT

0.04

/"^-^DCON'

STATE
CURRENT

0.01

0.5

1.0

1.5

2.0

2.5

3.5

3.0

4.0

0.5

1.0

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

1.

Maximum

On-State Characteristics

Maximum

2.

120

NOTES:'

110

uioo

^r

~-J

1.

2.4

2.8
(

IN

FREE AIR

ES

N0TE4

3.2

HALF SINE WAVE

VERTICAL

^\

TEMP.
2.0

'

TEMPERATURES ARE MEASURED l/16'FROM BODY

16

3.

TY

1.2

WATT AVERAGE GATE

0.01

0.8

OR INDUCTIVE LOAD.

RATINGS DERIVED FOR

V
\\

AVERAGE ON-STATE CURRENT-AMPERES

3.5

AMPERES

On-State Power Dissipation

RESISTIVE'

4. TAB

^70
Peo

0.4

3.0

CURRENT

2.

LU90

2.5

2.0

1.5

AVERAGE OR DC ON-STATE

>\

Maximum Allowable Temperatures

for Half Sine Wave On-State Current

3.

_j

TYPES 2 AND4

(SEE N0TE4I

(SEE NOTE 3)

f
T

2.0

TYPES IAND 3
TAB TEMP."

"\<SEEN0TE3)

TYP ES AND 3

2.4

DC ON-STATE CURRENT- AMPERES

4.

Maximum Allowable Temperatures

for DC On-State Current

400

JUM :ton TO AMI9IENT-

200

IOTZ-

(1)

(2)

TAE AND ANODE LEAD R EFFRE E

POINTS ARE 1/16 INCH FROM C iVtCE BODY.

rYPES

THERMAL IMPEDANCE FROM JUNCTION TO

AMBtENT FOR TYPES IAND 3 APPLY
E

AIR:

FOR TYPE 2 AND 4

284

MDIENT

-^

ANY

IN

JU iNcna

TO ANC DE LEADTYPE S

284

JUNC no* TO TAB-TYPES 103

t-

too

200
5.

4000 ..^Jjogo
2000
400 O000IOOO
cooo topoo
BATE TO CATHODE RESISTANCE-OHMS

Maximum and Minimum

OOOt 0.002 0J3O4

0.01

Q02

004

Ol

0.2

TIME

Holding

Current Variation with External

Gate-to-Cathode Resistance

8
6

6.

730

IN

04

10

20

SECONOS

Maximum Transient Thermal Impedance

40

100

C107

100

80
15

,-SS-

14

3:

uil3
a.

3
l2

II

(DOC T0 400PPS.

HOT! s

2^

a
10

(2)

:5;

'

NOTE: JUNCTION TEMPERATURE

IMMEDIATELY PRIOR TO
_ SURGE' -40*C TO tHO^C.

JUNCTION TEMPERATURE

IMMEDIATELY PRIOR TO TURNON =-40*C TO + IIO*C.

(3) SWITCHING FROM RATED
VOLTAGE.
(4) GATE SUPPLY! 5 VOLT OPEN
CIRCUIT, 300 OHM, l.5(i SEC
SQUARE WAVE PULSE, RISE
TIME-O.lp SEC MAXIMUM.

VALUE

INSTANTANEOUS

ON- STATE CURRENT

SHOWN.

III

4
6
0.6 0.8
2
TIME FROM START OF CURRENT FLOW-MICROSECONOS
0.2

6
8 10
CYCLES AT 60 Hz

Maximum Allowable Peak Surge

On-State Current (Non-repetitive)

7.

8.

0.4

Turn-On Current Limit

OUTLINE DRAWINGS
cio*

NOTE: I. GATE LEAD IS ADJACENT TO CHAMFER.

canvmtioNS

INCHIS

MHtlml

iH

S;

-tIt

2. ANODE.
3. CATHODE.
4. TAB IS DIRECTLY

CONNECTED TO CENTER
LEAD (ANODE) INTERNALLY.

.026
~o*

TTil

070

1770

0?J

nf;

Tiw

ttS

ifi

t^S

TltT

1*0

Toll

1m

TiVT

lii

TSf

is

Tm*

.019

>*"NOTE

SEE
NOTE-

.520
.480

.054

.046

SEE

J
~

050
.030 ^

-ISO
.240

N0TE2

381 -M
.297_^

.240

r
.050

Jl
.

SEE
NOTE

7*7*"

iS

tS
Sf

lio

TT5

*J0

iiig

HO

I1M

IT

N 070X45' REE

3*0

~m

.SEE

CHAMFER
.050
.030

.327
2.97

.050
.030

.105

.095"

~
_.

CI 07 TYPE

.1901,

.iror

CI 07 TYPE 2

731

CI 07 TYPE 3

C107 TYPE 4

C107
The C107, because

MOUNTING METHODS

of its unique package design, is capable of being mounted in a variety of methods;

depending upon the heatsink requirements and the circuit packaging methods.
The leads will bend easily, either perpendicular to the flat or to any angle, and may also be bent, if
desired, immediately next to the plastic case. For sharp angle bends (90 or larger), a lead should be bent
only once; since repeated bending will fatigue or break the lead. Bending in other directions may be
performed as long as the lead is held firmly between the case and the bend, so that the strain on the lead is
not transmitted to the plastic case.

The mounting tab may also be bent or formed into any convenient shape so long as it is held firmly
between the plastic case and the area to be formed or bent. Without this precaution, bending may fracture
the plastic case and permanently damage the unit.
As a service to its customers, the General Electric Company provides a lead and tab shaping capability.

Any

of the derived types

shown

in the following chart are available direct

from the factory

to original

equipment manufacturers.
DERIVED TYPES
(The types shown below are derived from the
basic types illustrated in the left-hand column.)

BASIC TYPES

PRINTED CIRCUIT BOARD

MOUNTING

RIVET OR SCREW MOUNTING TO FLAT SURFACE

(Upright or Flat)

O
.080
b'.332REF.

.080

b
t

46S REF

ILL
C 107 Type

C107Type 12

CI 07 Type 11

C107Type2

o
I

b-

469 REF

C107Type32

C107Type3

CI 07

.420

CONVERSIONS

'.380

l_

C107Type4

INCHES

MILLIMETERS

120

3.048

.080

2.031

INCHES

MILLIMETERS

.332 REF.

8.433 REF.

160

4.064

.420

10.668

.120

3.047

.380

9.651

.193 REF.

4.902 REF.

.465 REF.

JC107Type41

732

11.811 REF.

Silicon Controlled Rectifier

Flat

Up

to

600

Pack Design

Volts 5

Amperes (RMS)

PRODUCT FEATURES
The Type C108

Silicon Controlled Rectifier

Model C108

(SCR)

has the following outstanding features:

C108
TYPE 4

LOW COST

C108

SENSITIVE
Operates directly from low signal
sensors such as thermistors, photo-conductive

VERSATILE

methods

TYPE 2
cells, etc.

Designed for a variety of mount-down

printed

C108

circuit, plug-in socket, screws,

TYPE

TYPE 3

or point-to-point soldering

RUGGED, COMPACT
in rectangular

C108

Uses a solid plastic encapsulant

shape for high density packaging

(FULL SIZE)

TYPICAL APPLICATIONS
MOTOR CONTROL

LIGHT

REMOTE CONTROL

Model Trains
Sewing Machines
Movie Projectors
Food Mixers
Electric Fans
Slot Racing Cars
Electric

Home
Garage Door Openers

Power Switch

Flame Detectors
Moving-Light Signs (Chasers)
Driver for Computer Readout

DRYNESS

Clothes Dryness Sensor

PROXIMITY

Burglar Alarm
Touch Switch
Electric Door Openers

COUNTING

Low Speed Ring Counters

Lights

Harbor Buoy Flashers

Automotive Warning Systems
Nixie & Neon Drivers
TEMPERATURE

Armchair TV Control
Master Switching Stations for

Shift Registers

Range Surface Unit (Hybrid)

Chemical Processing
(Photographic,

SWITCHING

etc.)

Food Warmer Tray

Bearing Temperature Sensor
Electric Blanket Control

PRESSURE

Relay Replacement
Solenoid Drivers
Latching Relay Replacement
Power Flip Flops

Low Power Inverters

Auto Oil Pressure Gage

Hot Water Boiler Safety Monitor

Thyratron Tube Replacement

AMPLIFIERS

Gate Amplifier for Larger SCR's,

Triacs

TIME

Blenders

Photo Darkroom Exposure

Oven Timer
Vending Machine Logic

Hand Tools

Industrial Process Control

LIQUID LEVEL

Basement Sump Pump

Automatic Coffee Maker
Automatic Shutoff for Vending
Machines
733

IGNITION

Small Gas Engines

Gas Appliances

DETECTION

Voltage (Battery Charger)

Current (Crowbar)

C108

MAXIMUM ALLOWABLE RATINGS

Repetitive Peak Forward Blocking
Voltage, V F

Working and Repetitive

xm

Type

Peak Reverse Voltage,

and VRoiyilrep)
Tj = -40Cto+110C

R GK = 100 Ohms
Tj = -40Cto+110C

v ROM(wl<g)

C108Q1, C108Q2, C108Q3, C108Q4

15 Volts

15 Volts

C108Y1, C108Y2, C108Y3, C108Y4

30 Volts

30 Volts

C108F1, C108F2, C108F3, C108F4

50 Volts

50 Volts

C108A1, C108A2, C108A3, C108A4

100 Volts

100 Volts

C108B1, C108B2, C108B3, C108B4

200 Volts

200 Volts

C108C1, C108C2, C108C3, C108C4

300 Volts

300 Volts

C108D1, C108D2, C108D3, C108D4

400 Volts

400 Volts

C108E1, C108E2, C108E3, C108E4

500 Volts

500 Volts

C108M1, C108M2, C108M3, C108M4

600 Volts

600 Volts

RMS

Forward Current, On-State

Rate of Rise of Forward Current (non-repetitive), di/dt (See Chart 9)
Peak Forward Current, On-State (repetitive)
Peak One Cycle Surge Forward Current, Non-Repetitive,
I

IpM

5 Amperes
50 Amperes/Microsecond
75 Amperes*
30 Amperes

(surge)

(for fusing)

1.0

Ampere 2 seconds

Peak Gate Power, P

Average Gate Power, P
G(A V)
Peak Gate Current, I

(for times

1.5 Milliseconds)

GM

GFM

Peak Reverse Gate Voltage,

Storage Temperature, T
stg
Operating Temperature

Watt
Watt
Amperes
5

0.1

a2

Vq rm

g Volts

-40C to +150C
-40C to +110C

This rating applies for operation at 60 Hz, 75C

width tOfJsec, minimum, 1 5 /Jsec. maximum.

maximum

tab (or anode) lead temperature, switching from 80 volts peak, sinusoidal current pulse

IU

JUNCTION

TEMP=MOC

//

JUNCTION

TEMP =25C
'

o
/
/

.01

V"^

* INCREASES TO FORWARD
BREAKOVER VOLTAGE

2.0

1.0

INSTANTANEOUS ON- VOLTAGE VOLTS

1.

Maximum Forward

Characteristics,

734

On

State

C108
1

NOTES:

(1)

(2)

JUNCTION TEMPERATURE = IIO'C

RESISTIVE OR INDUCTIVE LOAD,
50 TO 400 Hi

MAXIMUM GATE TRlGGCR

f^CURUCMT AT-40"C

HALF SINE WA VE
3RENT

^DC ON -STATE
CURRENT

LTAGE

X^~~rill*" c

*
25-C

AT

11

1!

l
1

APPLIES FOR RECTANGULAR TRIGGER PULSCS

MOTE

04

01

0.6

6 8

20

10

40 0 (00

200

400 6O0I000

GATE PULSE WIDTH - MtCROSECONOS

Maximum Gate Trigger Current

3.

and Voltage Variation with

AVERAGE OR DC ON-STATE CURRENT, AMPERES

Maximum

2.

Trigger Pulse Width

On-State Power Dissipation

CHARACTERISTICS
Symbol

Tost

Reverse or Forward
Blocking Current
(All

Min.

'rbm

Typ.

Max.

/JA

V RRM = V DRM = Rated Value.

T L = 25C, R GK = 1000 Ohms

10

100

HA

30

200

/JAdc

V RRM = V DRM = Rated Value.

T L = U0C, Rqk = 1000 Ohms.
T L = 25C, V D =6Fdc,R L = 100 Ohms
R GK = 1000 Ohms

75

500

jUAdc

or

Types)

DOM

*DC Gate Trigger

Current

Test Conditions

Units

10

0.1

TL

= -40C, Vo = 6 Vdc,
= 1000 Ohms

RL

Ohms

= 100

R GK

DC

Gate Trigger

0.4

0.5

Voltage
0.5

0.7

1.0

0.2

Peak On- Voltage

1.2

'TM

1.35

Volts

T L =25C, Vp

DC

R GK

Volts

TL

DC

Rgk=

Volts

TL

DC

RL

= 110C, V D = Rated V DRM Value

= 3000 Ohms, R GK = 1000 Ohms

Volts

TL

= 25C,

VD

= -40C,

Latching Current

Critical

II

Rate of

0.3

1.0

3.0

mAdc

TL

0.4

2.0

6.0

mAdc

TL =

0.14

0.6

2.0

mAdc

TL

Ohms

= 6 Vdc,

R L = 100 Ohms

5 Amperes Peak,
Wave Pulse,

TM =

Vd

= 25C,

-40C,

= 110C,

V
Vd

= 12 Vdc,

R GK

= 1000

= 12 Vdc,

R GK

= 1000

1.5

4.0

mAdc

T L =25C, V D

3.0

8.0

mAdc

TL

Volts/
Micro-

T L =110C, V D = Rated V DRM Value

R GK = 1000 Ohms

1.2

Microseconds

TL

Microseconds

TL

dv/dt

td+tr

= -40C,

VD

= 12 Vdc,

= 12 Vdc,

R GK

= 1000

R GK

= 1000

Ohms

Ohms
Ohms

second

On Time

Commutated

40

Turn-Off Time

100

V DX = Rated V DRM Value

Ampere, Gate Pulse = 4 Volts,
300 Ohms, 5 Microseconds Wide.
= 25 C,

Ip M =

= 110C, rectangular current waveform,

Rate of rise of current < 10 amps/^isec.
Rate of reversal of current <5 amps//Llsec.
Itm = 1 Amp (50 jUsec pulse). Repetition
Rate = 60 pps. V RR|L = Rated.
V R = 15 Volts Minimum. Vqrm = Rated.
Rate of Rise Reapplied Forward
Blocking Voltage = 5 Volts//Llsec.
Gate Bias = Volts, 100 Ohms
(during turn-off time interval).
.

The lead temperature (T[J

Ohms

R GK = 1000 Ohms

= 12 Vdc,

0.4

Blocking Voltage

Circuit

= 100

0.3

Rise of Forward

Turn

RL

1000 Ohms

Single Half Sine

2 Millisec. Wide

Holding Current

= 6 Vdc,

Ohms

= 1000

is

measured

the center of the anode lead, J/I6*nch

in the center of the tab, 1 1 16 inch from the body on Type

from the body on Type 2 and Type 4 devices,

and Type J devices and

735

C108

111!!

NOTES:

(1

(RESISTIVE OR INDUCTIVE

LOAD
RATINGS DERIVED FOR .01 WATT
AVERAGE GATE POWER DISSIPATION
TEMPERATURES ARE MEASURED
1/16" FROM BODY ON EITHER TAB
OR ANODE LEAD AS INDICATED
(4) TAB VERTICAL IN FREE AIR

(2)

13)

0-

,BO-

360=

SCR

(CONDUCTING-frf*- BLOCKING

~H

ONE SUPPLY CYCLE

TYPE S + 3
TAB TEMP
(

TYPFS ? + 4
"ambifnt
\

TFMP
TEMP

\TYPES2 + 4
\y SEE
\ANODE LEAD
\TEMP
\ ^ (SEE NOTE 3) \
'

\\

NOTE

3]

\ TYPE 2*4
r~^-\ ANODE LEAD TEMP

NOTES

(I

TYPES 1+3

^.TAB TEMP
S. (SEE NOTE

(RESISTIVE OR INDUCTIVE
LOAD 50 TO 400Hz

(2)

P
t

RATINGS DERIVED FOR

.01

WATT

3)

TYPES 2+4
ANODE LEAD TEMP

1_J \
i

.TYPESI+3
AMBIENT TEMP
(SEE

NOTE

4)

L
^\

TEMPERATURES ARE MEASURED

1/16" FROM BODY ON EITHER TAB
OR ANODE LEAD AS INDICATED
14) TAB VERTICAL IN FREE AIR

(3)

\\

TYPES + 3
AMBIENT TEMP
(SEE NOTE 4)
1

\^~

AVERAGE ON-STATE CURRENT - AMPERES (HALF SINE WAVE)

CURRENT AMPERES

OC ON-STATE

Maximum Allowable Temperatures

for Half Sine Wave On-State Current

4.

5.

Maximum Allowable Temperatures

DC On-State Current

for

1O00

800
600

_L

JUNCTION TO AMBIENT

NOTE:
ANODE SUPPLY VOLTAGE

(21
(31

I?

VOLTS

0)

TAE AND ANODE LEAD REFERE YCE

POINTS ARE 1/16 INCH FROM DEVICE BODY.

(2)

CAUTION: STANDARD FORWARD BLOCKING

VOLTAGE RATING DOES MOT APPLY FOR
GATE TO CATHODE RESISTANCES GREATER
THAN 1000 OHMS

THERMAL IMPEDANCE FROM JUNCTION TO

AMBIENT FOR TYPES AND 3 APPLY OH

E AIR FOR TYPE 2

ITtON IN FREE AIR.

AND 4

IN

TYPES

Z84\

<s

ANY

rill

JUNCTION TO ANODE LEAD-

UM AT Z3'C

TYPES

28

JUNCTION TO TAB -TYPES 183

j

0.001

0002 0.004

001

002

004
TIME

7.

400

600 BOO 1000

2000

SECONDS

Maximum Transient Thermal Impedance

4000 6000 / I0O00

GATE TO CATHODE RESISTANCE -OH MS

6.

IN

Maximum and Minimum

90o

Holding

Current Variation with External

Gate-to-Cathode Resistance

NOTES!

OC TO 400 P. PS.
JUNCTION TEMPER
ATURE IMMEDIATELY
PRIOR TO TURN-0N-40*C

(I)
(2)

TO +IIO"C.

SWITCHING FROM
RATED VOLTAGE.
(4) GATE SUPPLY
5 VOLT_
OPEN CIRCUIT, 300 OHM,
15m. SEC SQUARE WAVE

(3)

k 20

NOTE
JUNCTION TEMPERATURE
IMMEDIATELY PRIOR TO
SURGE = -40"C TO + IIO"C

PULSE. RISE TIME

SEC MAXIMUM.

'0.1(1

"J

INSTANTANEOUS VALUE OF ANODE CURRENT

MUST NEVER EXCEED TURN-ON CURRENT
LIMIT LINE SHOWN.

i
01

CYCLES AT 60Hi

8.

02
04 06 08
6 810
2
4
TIME FROM START OF CURRENT FLOW- MICROSECONDS
t

Maximum

Allowable Non-Repetitive
Peak Surge Forward Current

9.

736

Turn-On Current

Limit

C108

MOUNTING METHODS
The C108, because

of its unique package design, is capable of being mounted in a variety of methods

depending upon the heatsink requirements and the circuit packaging methods.
The leads will bend easily, either perpendicular to the flat or to any angle, and may also be bent, if
desired, immediately next to the plastic case. For sharp angle bends (90 or larger), a lead should be bent
only once; since repeated bending will fatigue or break the lead. Bending in other directions may be
performed as long as the lead is held firmly between the case and the bend, so that the strain on the lead is

not transmitted to the plastic case.

The mounting tab may also be bent or formed into any convenient shape so long as it is held firmly
between the plastic case and the area to be formed or bent. Without this precaution, bending may fracture
the plastic case and permanently damage the unit.
As a service to its customers, the General Electric Company provides a lead and tab shaping capability.
Any of the derived types shown in the following chart are available direct from the factory to original

equipment manufacturers.
DERIVED TYPES
(The types shown below are derived from the
basic types illustrated in the left-hand column.)

BASIC TYPES

PRINTED CIRCUIT BOARD

MOUNTING

RIVET OR SCREW MOUNTING TO FLAT SURFACE

(Upright or Flat)

o
.080
b.

CI 08 Type

332 REF

C108Type11

C108 Type 12

.060

JU

332 REF.

T
b

C108 Type 2

C108 Type 21

o
I

b> .465 REF

C108Type32

C108 Type 3
420
*3BO

C108 CONVERSIONS

INCHES

MILLIMETERS

.120

3.048

.080

2.031

.160

.120

.193 REF.

INCHES

MILLIMETERS

.332 REF.

8.433 REF.

4.064

.420

10.668

3.047

.380

9.651

4.902 REF.

.465 REF.

7
C108Type4

C108 Type 41

737

11.811 REF.

C108

SIMPLE TEST CIRCUIT FOR THE C108 SCR'

Gate Trigger Voltage and Current Measurement

RESET- NORMALLY CLOSED PUSHBUTTON

-ol

Rl

Igs

DC meter
DC meter
0-lmA DC milliameter

Rl

IK

Vi
Vgt

0-10 volt
0-1 volt

potentiometer

To measure gate trigger voltage and current, raise gate voltage (V (;T )
from 6 volts to 1 volt. Gate trigger voltage is the reading on V (:T just prior
current I G t can be computed from the relationship
Igt

until

meter reading V, drops

Gate trigger

to V, dropping.

amps

Ic

1000

where

I GS is

reading (in amps) on meter just prior to Vi dropping.

from gate lead).

NOTE

I GT

may

turn out to be a nega-

tive quantity (trigger current flows out

For more

"Using

Low

sophisticated equipment suitable for testing the

Current

CI 08 SCR

SCR V.

I
738

see

GE Application Note 200.19

CIRCUIT DESIGN
1

C108

Use of Gate Resistor

The C108 SCR

guaranteed to block rated voltage over its rated operating temperature range only if
a resistance of not more than 1000 ohms, or equivalent, ** is connected between its gate and cathode termiis

nals as follows

ANODE
GATE
o-

IK.OR
LESS

CATHODE

** For alternative acceptable gate biasing methods see Application Note

2.

200. 19

"Using Low Current SCR's".

Suppression of Rate Effect

subjected to fast rising anode voltages as for instance where voltage is

applied suddenly with a switch, RC "slow down" niters may be required to prevent the SCR from triggering spontaneously. C should be selected in conjunction with R L so that dv/dt is less than 10 volts per microIn circuits

where the C108

is

second thus

DV
DT

OT

V
< IOV/u S

R L (LOAD RESISTANCE)

T ~(R L XC)

(The 10 ohm resistor limits turn on current through the

SCR

a safe value when the

to

SCR

turns on.)

OUTLINE DRAWINGS
C.08

NOTEM.GATE LEAD
2. ANODE.
3. CATHODE.

CONVERSES

INCHIf

177

.400 _

MIUIWillM

"360
"S!

4.

010

"TiT

260

TrH

070

im

rSi

"m

77m

TAB IS DIRECTLY CONNECTED TO CENTER

LEAO (ANODE) INTERNALLY.

.026
".019

TiS"-

SEE
NOTE2

"777

ADJACENT TO CHAMFER.

.135

iS

IS

7t

050
.0301

<h
"775

-*

.054

297 1

p""^>^

i"*

tSi

177

tS;

.030
.030

"m

7777

"mo

77-

"77.

T7J7

.050
.030

TiS
7777

"S

"ttS

"Til

ToTJo

-7E

TiTiT

'

_.

.240

1
.327
!

.297

.050
.030

.1901,

~i .i7or~

C108 TYPE

260

Ur

CHAMFER

"Si

,.

Jl
N .070X45 # REF

NOTE

NOTE
SEE

J ** L~ -240 r

.046

t"

jif

"777

*""

-i

CI 08 TYPE 2

739

C108 TYPE 3

C108TYPE4

C108
Emergency

l.

REPRESENTATIVE APPLICATIONS OF THE C108 SCR

Light

This simple circuit provides battery operated emergency lighting instantaneously upon failure of the
regular AC service. When line power is restored, the emergency light turns off and the battery recharges
automatically. The circuit is ideal for use in elevator cars, corridors and similar places where loss of light due
to power failure would be undesirable. Completely static in operation, the circuit requires no maintenance.
With AC power "on", capacitor CI charges through rectifier CR1 and resistor Rl to develop a negative DC voltage at the gate of the C108Y SCR. By this means the SCR is prevented from triggering, and
the emergency light stays off. At the same time, the battery is kept fully charged by rectifier CR2 and resistor R2. Should the AC power fail, CI discharges and the SCR is triggered on by battery power through
resistor R3. The SCR then energizes the emergency light. Reset is automatic when AC is restored, because
the peak AC line voltage biases the SCR and turns it off.

CR2-GE A40F

240/120
VOLTS AC

9-

CI

IOOMF
18V

GE
1073 LAMP

R2-CURRENT LIMITING
AS REQUIRED

"HI

R3
IK

Rl

tEI

12

VOLT BATTERY

100

CRI

GE AI4F
ALL RESISTORS

240/1201 12.6 VOLT

1/2

TRANSFORMER

WATT

EXCEPT AS

NOTED

Universal Motor Speed Control

2.

This circuit can replace the carbon-pile speed controller commonly supplied with household sewing mais equally effective for use with other small AC-DC motors, such as those found in food mixers
and similar traffic appliances. Maximum current capability is 1.5 amps. Provision of speed-dependent feedback gives excellent torque characteristics to the motor, even at low speeds where other types of controllers
are completely ineffective.
The resistor capacitor network R1-R2-C1 provides a ramp-type reference voltage superimposed on top
of a DC voltage adjustable with the speed-setting potentiometer R2. This reference voltage appearing at
the wiper of R2 is balanced against the residual counter emf of the motor through the SCR gate. As the
motor slows down due to heavy loading, its counter emf falls, and the reference ramp triggers the SCR
earlier in the AC cycle. More voltage is thereby applied to the motor causing it to pick up speed again. Performance with the C108 SCR is particularly good because the low trigger current requirements of this device allow use of a flat top reference voltage, which provides good feedback gain and close speed regulation.
chines. It

Line

Voltage

Ri

R2
R3
C1

MIXER,

SEWING
MACHINE.OR

c2

SIMILAR

D1

UNIVERSAL
I

MOTOR
MAX- CURRENT
1.5

AMP)

D2
SCR

120V
47 K
10K
IK
IjUF, 50V
0.1/iF, 50V
1 N5059
1N5059
C108B1

240V
100K
20K
1K
1/LtF, 100V
0.1/iF, 50V
IN 5060
1N5060
C108D1

Note
C, optional, contributes to performance in some circumstances.
Neither the disclosure of any information herein nor the sale of semiconductor devices by General Electric Company
conveys any license under patent claims covering combinations of semiconductor devices with other devices or elements. In the
absence of an express written agreement to the contrary, General Electric Company assumes no liability for patent infringement
arising out of any use of the semiconductor devices with other devices or elements by any purchaser of semiconductor devices
or

by

others.

740

Reverse Blocking

Triode Thyristor

Model C116

(SCR)
8ARMS

Up

to

600

Volts

molded silicon plastic SCR which incorporates General Electric's new

glassivation process. This process provides for an intimate void-free bond
the silicon chip and the glass coating significantly improving performance and

The CI 16

is

POWER-GLAS
between

reliability.

FEATURES:
JEDEC TO-202

maximum

AC

DC

Glassivated silicon chip for

Special selections for non-standard gate requirements available

Designed for a variety of mount-down methods.

reliability in

or

circuitry.

upon

request.

TYPICAL SCR APPLICATIONS

GENERAL FUNCTIONS
Motor

Temperature

Application

Control

Control

Process Control Equipment

Reproduction Equipment

Machine Tools/Misc. Mfg.

X
X
X

Sewing Machines

Blender, Mixers

Hand Tools

Photographic Equipment

X
X

Circuit

X
X

X
X

X
X
X

Battery Chargers
Business Machines

Gas

&

X
X

Industrial Timers

Capacitor Discharge

X
X

Clutches/Brakes

Vending Machines

Power
Regulator

Laundry

Farm Equipment

Relay &
Solenoid Driver

X
X

Oil Ignitors

Internal Combustion
Engine Ignitions

X
X
X

741

C116

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

TYPE

VOLTAGE, V DRM (3)

T c = -40 Cto+110C

C116F

50 Volts

C116A
C116B

NON-REPETITIVE PEAK

REPETITIVE PEAK
REVERSE VOLTAGE,
V RRM (D(3)

REVERSE VOLTAGE,
Vrsm<1><2>
T c = -40Cto+110C

T c = -40Cto+110C
50 Volts

75 Volts

100 Volts

100 Volts

200 Volts

200 Volts

200 Volts

300 Volts

C116C

300 Volts

300 Volts

400 Volts

C116D
C116E

400 Volts

400 Volts

500 Volts

500 Volts

500 Volts

600 Volts

C116M

600 Volts

600 Volts

720 Volts

RMS On-State

Current, IT ( RM s)
Average On-State Current, It(av)
Critical Rate-of-Rise

of On-State Current,

Depends on

(See Chart 10)

Switching from 400 volts

Switching from 600 volts
Peak One Cycle Surge (non-rep) On-State Current, I TS m 50 Hz
Peak One Cycle Surge (non-rep) On-State Current, I TSM 60 Hz
t

(for fusing), for times at 8.3 milliseconds

(for fusing), for times at 1.5 milliseconds

2
I

82 Amperes
90 Amperes
34 Ampere 2 Seconds
2
27 Ampere Seconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)

Peak Positive Gate Current, I GM

Watts for 10 microseconds (See Chart 6)

0.5 Watts
(See Chart 6)

Peak Positive Gate Voltage, V GM

Peak Negative Gate Voltage, V GM
Storage Temperature,

conduction angles)

100 Amperes Per Microsecond

65 Amperes Per Microsecond
30 Amperes Per Microsecond

Switching from 200 volts

(all

conduction angle (See Charts 3 and 4)

di/dt: (4)

Gate Triggered Operation

Amperes

(See Chart 6)
5 Volts

T STG

-40C to +125C

Operating Temperature, Tj

-40C to +1 10C

NOTES:
Values apply for zero or negative gate voltage only.
Half sine wave voltage pulse, 10 millisecond duration.
(3) During performance of the off-state and reverse blocking
would permit applied voltage to exceed the device rating.
(1)
(2)

tests,

the thyristor should not be tested with a constant source which

is established in accordance with JEDEC Standard P.S.397 Section 5.2.2.6. Off-state (blocking) voltage capability
temporarily lost immediately after each current pulse for duration less than the period of the applied pulse repetition
rate. The pulse repetition rate for this test is 60 Hz. The duration of the JEDEC di/dt test condition is 5.0 seconds (minimum).

(4) di/dt rating

may be

I
742

C116

CHARACTERISTICS
TEST
Peak Off-State or
Reverse Current (1)

SYMBOL

TYP.

MAX.

UNITS

mA

Idrm
or

Irrm
Peak On-State

MIN.

Vtm

TEST CONDITIONS

Vdrm

0.1

T c = + 25C

0.5

T c =+110C

1.57

Volts

dv/dt

100

Volts/iusec

50

jusec

10

volts

peak

T c =+ 25C,I TM =16Apeak.
1

of Off-State Voltage
(Higher values may

= Max. allowable

Vrrm

Voltage
Critical Rate-of-Rise

Millisecond wide pulse,

Duty

cycle

<

2%.

T c =+110C, Rated V DRM

Gate Open Circuited, Linear Waveform.
.

cause device

switching)

Commutated

Circuit

tq

Turn-Off Time

T c = +1 10C, I TM = 10
40

current pulse,

A peak.

tsec duration.

Rectangular

Commutation

= 5A//xsec. Peak reverse voltage = Rated

max. Reverse voltage at end of turn-off
time interval 12 volts min. Repetition rate =
rate

volts

60 pps. Rate-of-Rise reapplied off-stage voltage

(dv/dt) = lOV/^sec. Off-State voltage = Rated

Gate bias during turn-off time interval =

100 ohms.
D.C. Gate Trigger

Igt

Current
D.C. Gate Trigger
Voltage

Holding Current

V GT

25

40

1.5

2.0

Tc =

0.2

Tc =

mAdc

Tc =
Vdc

mAdc

Ih

VD
VD
VD
VD
VD

T c = + 25C;
-

40C;

T c = + 25C;
-

40C;

+1 10C;

Anode source

= 6 Vdc;
= 6 Vdc;

= 6 Vdc;
= 6 Vdc;

= 6 Vdc;

voltage =

RL
RL
RL
RL
RL

volts,

= 91 ohms.
= 45 ohms.
= 91 ohms.
= 45 ohms.
= 1000 ohms.

24 Vdc, Peak

initiating

On-State current = 0.5 A, 0.1 msec to 10 msec

wide pulse. Gate

Latching Current

30

T c = +25C

60

T c = -40C

mAdc

II

trigger source

= 7V, 20 ohms.

Main Terminal Source Voltage = 24 Vdc, Gate

trigger source = 15 V, 100 ohms, 50 /usee rise and
fall times max.

60

Tc = +25C

120

T c = -40C
C/Watt

Steady-State (2)

Thermal Resistance

R0jc

8.0

Junction-to-Case (Types 11 and 12)

R0JA

75

Junction-to- Ambient (Types 11 and 12)

NOTES:
(1)
(2)

Values apply for zero or negative gate voltage only.

Tl is approximately equal to Tq, see outline drawing. The junction-to-ambient value

#22

copper wire used for electrical contact to the terminals and natural convection.

743

is

under worst case conditions,

i.e.,

with

C116
h^r.

~d

J*^o^"

1
!

Tc

QZy

/V25

'C

NOTES:

MSEC WIDE PULSE

DUTY CYCLE 52%i
I TM =I
/
/

1
/

10

0.5

2.0

1.5

2.5

3.0

AVERAGE ON-STATE CURRENT

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

1.

Max. On-State Voltage

vs.

On-State Current

2.

AMPERES

Max. On-State Power Dissipation for Half-Wave

Wave of Current

Rectified Sine

NOTES:

I.

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400Hz.

2.

RATINGS DERIVED FOR 0.5 WATTS AVERAGE

GATE POWER DISSIPATION.

3.CURVES APPLY FOR RATE OF RISE OF ON-STATE
CURRENT (di/dt) = IOAMPERES PER MICRO-

SECONDMAXIMUM.

.\V
VV
\
2

CONDUCTION CONDUCTION
ANSI F
ANfil F

J^/U

50

COND UCTION
ANGL E'60"

Max. Allowable Case Temperature For Half-Wave Rectified

4.

20'

180

360

240

5
-

Sine Wave of Current

Max. Allowable On-State Power Dissipation for Full-Wave

Sine

Wave of Current

6.

744

AMPERES

AVERAGE ON-STATE CURRENT -AMPERES

5.

FREQUENCY

Max. Allowable Case Temperature For Full-Wave Rectified

Sine Wave of Current

AVERAGE ON-STATE CURRENT

AVERAGE ON- STATE CURRENT -AMPERES

3.

vn

V*)0NE CYCLE OF SUPPLYK-

>^

Gate Trigger Characteristics

C116

NOTES'
i

NOTES'

ANODE VOLTAGE- 6 VDC

LOAD RESISTOR 91 OHMS AT 25"C,
43 OHMS AT-40*C

ANO E VOLTAGE

6 VDC

45 OHMS AT -40C

-r-

...

.j

-40

CASE TEMPERATURE

7.

Max.

DC

Tc,

("Ct

Gate Voltage to Trigger

vs.

-30

Case Temperature

8.

Max.

TEMPERATURE. TCi

2.

H ECTANGULA* GATE CUR ENT PULSE APPLIED

2 R SE ANO FA L TIMES E JUAL TO OR LESS
T HAN 10%
GATE POL SE WIDTH
1

NODE VOLT GE "6VDC

4.L OAO RESIST OR 91 OHM

SAT 25 *C. 45 OHMS

A T-40*C.

10

BO

i-

40

CASE TEMPERATURE = -40"'C, TO

I)

III

REQUIRED GATE DRIVE 10 VOLTS,

20 OHM SOURCE, IOMICROSECOND
PULSE WIDTH MINIMUM, 0.2 MICRO-"
SECOND RISE TIME MAXIMUM.+-H-H
4. INSTANTANEOUS VALUE OF ON-STATE
CURRENT MUST NEVER EXCEED TURNON CURRENT LIMIT LINES SHOWN.
3.

<t

120

Case Temperature

-H20-C.

C)

I.FREQUENCY = 400Hz MAXIMUM

NOTES-

ISO

("

DC Gate Current to Trigger vs.

240

40

30

CASE

IS ESTABLISHED IN ACCORDANCE WITH JEDEC STANDARD RS373,

SECTION 5.2.2.8 OFF-STATE (BLOCKING)
VOLTAGE CAPABILITY MAY BE TEMPORARILY
LOST AFTER EACH CURRENT PULSE FOR
DURATIONS LESS THAN THE PERIOD OF THE
APPLIED PULSE REPETITION RATE. THE PULSE
REPETITION RATE FOR THIS TEST IS 60Hz THE
DURATION OF THE JEDEC di/dt TEST CONDITION
IS 20 SECOND MINIMUM.

5 di/dt RATING

O
_._

GATE PULSE WIDTH (MICROSECONDS)

9.

Max.

DC

Gate Current to Trigger

vs.

TIME FROM START OF CURRENT FLOW- MICROSECONDS

Gate Pulse Width

10.

Turn-On Current Limit

NOTES-

CURVES APPLY FOR HALF SINE

WAVE CURRENT WAVEFORM.
THIS OVERLOAD MAY BE APPLIED
FOLLOWING DEVICE OPERATION AT
ANY VOLTAGE OR CURRENT WITHIN
ITS STEAOY-STATE RATING LIMITS.
3 THE OVERLOAD MAY NOT BE REPEATED
UNTIL DEVICE JUNCTION TEMPERATURE
HAS COOLED DOWN TO WITHIN
STEADY STATE RATED VALUE.
4. NO BLOCKING VOLTAGE RATING IS
IMPLIED DURING OR IMMEDIATELY
FOLLOWING THE OVERLOAD CURRENT
I.

SOHl\

NOTES

SjOHt

JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO SURGE- -40'C TO + IOO'C
GATE CONTROL MAY BE LOST DURING ANO
IMMEDIATELY FOLLOWING THE SURGE
CURRENT INTERVAL.
3 CURRENT OVERLOAD MAY NOT BE REPEATE 3
UNTIL JUNCTION TEMPERATURE HAS
RETURNED TO WITHIN STEADY-STATE
RATED VALUE.
1

INTERVAL.
5.

JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO OVERLOAD - -40'C TO+IOO*C

'
!

L..J X.J
6

11.

L_

10

CYCLES

...
40

60

80

100

m GOHi)

PULSE WIDTH (m -SEC)

Max. Allowable Surge Current

Following Rated Load Conditions

12.

745

Sub-cycle Surge and 2 t Rating

l

Following Rated Load Conditions

C116

.."NOTES:

'IT CURVE DEFINES TEMPERATURE RISE OF JUNCTION ABOVE '"

/" CASEFOR SINGLE LOAD PULSE OF DURATION (t). PEAK ALLOWI.

FROM CASE TEMPERATURE EQUALS IOC IMAXT) MINUS CASE

TEMPERATURE DEVIDED BY THE TRANSIENT THERMAL IMPEDANCE.
II
mn-r-T. II
I

PEAK- z
/y
8jc(D mi
^2. FOR OPTIMUM RATINGS AND FURTHER INFORMATION,
SEE PUBLICATION!
I

'

I
1

III
iii

111

200.9 ENTITLED,"POWER SEMICONDUCTOR RATINGS UNDER TRANSIENT

INTERM.TTENTLOADS...

|||||

,,

,
|

AND

||||||
CASE TEMPERATURE, T

TIMEIU-SECONDS
13.

Max. Transient Thermal Impedance, Junction to Case

Types 1 and 3

14.

Max.

DC

Holding Current

vs.

CO

Case Temperature

MOUNTING METHODS
The C116, because of its unique package design, is capable of being mounted in a variety of methods;
depending upon the heatsink requirements and the circuit packaging methods.
The leads will bend easily, either perpendicular to the flat or to any angle, and may also be bent, if
desired, immediately next to the plastic case. For sharp angle bends (90 or larger), a lead should be bent
only once; since repeated bending will fatigue or break the lead. Bending in other directions may be
performed as long as the lead is held firmly between the case and the bend, so that the strain on the lead is
not transmitted to the plastic case.
The mounting tab may also be bent or formed into any convenient shape so long as.it is held firmly
between the plastic case and the area to be formed or bent. Without this precaution, bending may fracture
the plastic case and permanently damage the unit.
As a service to its customers, the General Electric Company provides a lead and tab shaping capability.
Any of the derived types shown in the following chart are available direct from the factory to original

equipment manufacturers.

OUTLINE DRAWINGS
FORMED LEAD TYPES
RIVET/SCREW

MOUNT

TAB TO-5

CLIP

u
3nP
zlUJ

.33^*^

ENTR

.005
- .080
(INSIDE)

I
TYPE

746

12

TYPE

21

SCR
8A

The CI 22

GLAS

is

molded

SCR which

silicon plastic

RMS Up

C122
600 Volts

to

incorporates General Electric's

glassivation process. This process provides for an intimate void-free

silicon chip

and the

glass coating significantly

improving performance and

new POWER-

bond between

the

reliability.

FEATURES:
Glassivated

silicon chip for

No maximum

Round

Six

leads

maximum

reliability in

AC

or

DC

circuitry

torque limit on mounting screw

greatly simplifies customer assembly

standard

lead

forming

configurations

available

from

factory

(including

TO-66

JEDEC TO-220AB

compatibility)

Special

selections for non-standard gate requirements available

upon request

TYPICAL SCR APPLICATIONS

GENERAL FUNCTIONS
Motor

Temperature

Application

Control

Control

Process Control Equipment

X
X

Reproduction Equipment
Blender, Mixers

Hand Tools
Machine Tools/Misc. Mfg.
Sewing Machines

X
X

X
X
X
X

Photographic Equipment

X
X

Business Machines

&

X
X

X
X

X
X
X

Battery Chargers

Gas

Circuit

Industrial Timers

Capacitor Discharge

X
X

Clutches/Brakes

Vending Machines

Power
Regulator

Laundry

Farm Equipment

Relay &
Solenoid Driver

X
X

Oil Ignitors

Internal Combustion
Engine Ignitions

X
X

747

CI 22

MAXIMUM ALLOWABLE RATINGS

Repetitive Peak Off-State
Voltage, V D rm(3)

Repetitive Peak

Non- Repetitive Peak

Reverse Voltage,

Reverse Voltage,

V RRM (1)(3)

Vrsm<iH2>-40Cto+100C

Type

T c = -40Cto+100C

C122F

50 Volts

50 Volts

75 Volts

C122A

100 Volts

100 Volts

200 Volts

C122B

200 Volts

200 Volts

300 Volts

TC

Tc

40Cto+100C

C122C

00 Volts

300 Volts

400 Volts

C122D

400 Volts

400 Volts

500 Volts

C122E

00 Volts

500 Volts

600 Volts

C122M

600 Volts

600 Volts

700 Volts

Peak positive anode voltage (T c = -40C to +1 00C)

560 Volts

RMS

On-State Current, Ix(RMS)

Average On-State Current, Ix(AV)

Amperes

conduction angles)
Depends on conduction angle (See Charts 3 and 4)
8

(all

Critical Rate-Of-Rise of On-State Current, di/dt: (4)

Gate triggered operation

(see Chart 10)

Switching from 200 volts

Switching from 500 volts

100 Amperes per microsecond

50 Amperes per microsecond
82 Amperes
90 Amperes
34 Ampere 2 seconds

Peak One Cycle Surge (non-rep) On-State Current, IjSM 50 Hz

60 Hz
I

2 t (for fusing), for times at 8.3

milliseconds
1.5 milliseconds

Peak Gate Power Dissipation, P(j M

Average Gate Power Dissipation, Pq(AV)
Peak Positive Gate Current Iqm
Peak Positive Gate Voltage, Vqm
Peak Negative Gate Voltage,
Storage Temperature, T stg
Operating Temperature, Tj

see

Chart 12
j

27 Ampere 2 seconds
Watts for 10 microseconds (see Chart 6)
0.5 Watts
see Chart 6
see

Vgm
-40

Chart 6
5 Volts

Cto+125C

NOTES:
1.

Values apply for zero or negative gate voltage only.

2.

Half sine wave voltage pulse, 10 millisecond duration.

During performance of the off-state and reverse blocking tests, the thyristor should not be tested with a constant source which would
permit applied voltage to exceed the device rating.
di/dt rating is established in accordance with JEDEC Suggested Standard No. 7, Section 5.1.2.4. Off-state (blocking) voltage capability
may be temporarily lost immediately after each current pulse for duration less than the period of the applied pulse repetition rate. The
pulse repetition rate for this test is 400 Hz. The duration of the JEDEC di/dt test condition is 5.0 seconds (minimum).

3.

4.

748

C122

CHARACTERISTICS
Test

Peak Off-state or
Reverse Current (1)

Symbol

Min.

Typ.

Vppjvf = Vdph = Max. allowable volts peak

T = + 25C

Volts

Tc

50

Volts/^sec

< 2%
T c = +100C, Rated V DRM
Gate Open Circuited, Linear Waveform

50

/isec

T c = +100C, IjM

or

V TM

0.1

T, = +100C

0.5

Test Conditions

Units

mA

Jdrm
Ippiu

Peak-On-State Voltage

Max.

1.83

Rate of Rise of
Off-State Voltage (HighCritical

dv/dt

10

= +25C, Itm = 16A P eak Millisecond wide pulse. Dutv cvcle

er values may cause

rlpvicp switching).

Circuit

Commutated

Turn-Off Time

= 10

Apeak. Rectangular

current pulse, 40 /Lisec duration. Commutation

rate = -5A/jUsec. Peak reverse voltage = Rated
volts max. Reverse voltage at end of turn-off

time interval 12 volts min. Repetition rate =

60 pps. Rate of rise of re-applied off-stage
voltage (dv/dt)

=10

V/jUsec. Off-state voltage

Rated V. Gate bias during turn-off time

intprval = fl vn)U 1 (10 ohms.
D.C. Gate Trigger
Current

D.C. Gate Trigger

IGT

Vqt

25

"

40

mAdc

1.5

Voltage
2.0

Vdc
0.2

T C = +25C
V D = 6 Vdc
Ri = 91 ohms
T c = -40C
V D = 6 Vdc
Rt = 45 Ohms
T c = +25C
V D = 6 Vdc
Rt = 91 Ohms
T c = -40C
V D = 6 Vdc
Rt = 45 ohms
T C = +100C
Rated

R t ,=
Holding Current

mAdc

Ih

Vdrm
1000 ohms

Anode source voltage = 24 Vdc, Peak initiating

on-state current = 0.5 A, 0.1 msec to 10 msec
wide pulse. Gate trigger source = TV, 20 ohms

_
Latching Curren-t

_
-

30

60

mAdc

IL

T. = +25C
T c = -40C
Main Terminal Source Voltage = 24 Vdc, Gate
trigger source = 15V, 100 ohms, 50 jUsec rise
and

fall

times max.

T = +25C
T r = -40C

60
120
C/Watt

Steady-State (2)

Thermal Resistance

R0JC
R0JA

1.8

Junction to Case

75

Junction to Ambient

NOTES:
1.

2.

Values apply for zero or negative gate voltage only.

see outline drawing. The junction to ambient value
is approximately equal to Tq,
#22 copper wire used for electrical contact to the terminals and natural convection.
T|_

is

under worst case conditions,

749

CI 22

i
^-~^
DC

wxWxvW

0"/

L_
P"

CONDUCTION

ANGLE

180'

\Z0/

NOTES

90"

NOTES

1.

Itm

MSEC WIDE PULSE,

60"

DUTY CYCLE 5 2%

CONDUCTION
ANGLE -30"

/t C -25 "C
TC

RESISTIVE OR INDUCTIVE LOAD. 50

TO 400 Hi.
DERIVED FOR 0.5 WATTS
AVERAGE GATE POWER DISSIPATION.
CURVES APPLY FOR RATE OF RISE
OF ON-STATE CURRENT (di/dtl- 10
AMPERES PER MICROSECOND
MAXIMUM.

2 RATINGS

3.

lOO'c/

AVERAGE ON-STATE CURRENT (AMPERES)

INSTANTANEOUS ON-STATE VOLTAGE (VOLTS!

1.

2.

Max. On-State Voltage

vs.

Max. On-State Power

Dissipation for Half-Wave

On-State Current

Rectified Sine

NOTES
1. RESISTIVE OR INDUCTIVE LOAD. 50 TO
400 Hi
2 RATINGS DERIVED FOR 0.5 WATTS AVERAGE
GATE POWER DISSIPATION
3. CURVES APPLY FOR BATE OF RISE
OF
ON- STATE CURRENT (fli/dt)- 10 AMPERES
PER MICROSECOND MAXIMUM.

93

IOO

95

90

Wave of Current

*j CONDUCTION

ANGLEl* *) CONDUCT ION ANGLEk-

% 90

uj

90

o
X
X

k\\\\\\V YWOvS\oQNE CYCLE OF SUPPLY FREQUENCY -

Y\ \\
\

CONDUCTION
ANGLE -30

07

"V^l 4

\\
DC
ISO*

60

oy

90"

5$Smw
ANGLE

85

uj

80

360

COND UCTION A MGLE =60

240 *

NOTESRESISTIVE OR INDUC IVE LOAD. 50

1.

TO 400Hi.

FOR 0.5 WATTS

AVERAGE GATE POWER DISSIPATION
CURVES APPLY FOR RATE OF RISE
OF ON-STATE CURRENT (di/dt)

2 RATINGS DERIVED

L_
p-

CONDUCTION

X
3
x
3

x 70
X

70

MAXIMUM

65
65

AVERAGE ON-STATE CURRENT (AMPERES)

3.

AVERAGE ON-STATE CURRENT (AMPERES)

Max. Allowable Case Temperature

For Half-Wave Rectified
Sine Wave of Current

4.

Max. Allowable Case Temperature

For Full-Wave Rectified
Sine Wave of Current

H CONDUCTION ANGLE [

j CONDUCTION

ANGLE

WkAIlk

20"

/>

180"

360*

360"

ov/

C JNDUCTIO

A NGLE-60

NOTES
1

2.
3.

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hi.

RATINGS DERIVED FOR 0.5 WATTS AVERAGE

GATE POWER DISSIPATION

CURVES APPLY FOR RATE OF RISE OF ON-STATE
CURRENT di/dt)" 10 AMPERES PER MICROSECOND MAXIMUM
<

AVERAGE ON-STATE CURRENT (AMPERES)

Max. Allowable On-State Power

Dissipation for Full-Wave

Sine

Wave
750

of Current

C122

2 41

20k^1

"~~~~~~

<

'

NOTES

ANODE VOLTAGE

6 VDC

1.2 I--

45 OHMS AT -SC'C

.?

-20

-30

CASE TEMPERATURE

NSTANTANEOUS GATE CURRENT - AMPERES

6.

Gate Trigger Characteristics

7.

Max.

DC

T C|

CO

Gate Voltage to

Trigger vs. Case Temperature

NOTES:
1

2.

4.

RECTANGULAR GATE CUR ENT PULSE APPLIED.

RISE AND FALL TIMES E UAf, TO OR LESS
THAN 10% OF GATE PUL SE WIDTH.

LOAD RESISTOR
AT -40C.

91

OHM i AT 25C, 45 OHMS

*\
NOTES;
1

ANODE VOLTAGE -6 VDC.

LOAD REStSTOR -91 OHMS AT 25C,
45 OHMS AT-40-C.

CASE TEMPERATURE, TCi

8.

Max.

GATE PULSE WIDTH (MICROSECONDS)

[C)

9.

DC

Trigger vs.

Gate Current to
Case Temperature

Trigger

&

rt3

MM M

DC
vs.

Gate Current to
Gate Pulse Width

llllll

FREQUENCY = 400Hj MAXIMUM.

3 REQUIRED

&

GATE DRIVE:

10

VOLTS, 20 OHM SOURCE,

10

RISE TIME MAXIMUM.

*/\

st

1.

f
-

Max.

4 INSTANTANEOUS VALUE OF ON-STATE CURRENT MUST

NEVER EXCEED TURN-ON CURRENT LIMIT LINES
SHOWN.
5. di/dt RATING IS ESTABLISHED IN ACCORDANCE WITH
JEOEC SUGGESTED STANDARD NO 7, SECTION 3-1-2.4
OFF-STATE (BLOCKING) VOLTAGE CAPABILITY MAY B
TEMPORARILY LOST AFTER EACH CURRENT PULSE
FOR DURATIONS LESS THAN THE PERIOD OF THE
APPLIED PULSE REPETITION RATE. THE PULSE
REPETITION RATE FOR THIS TEST IS 40OHr THE

ftV

^A

iV
Jy

5.0
i

TIME FROM START Of

10.

SEC MIN.
i

CURRENT FLOW (MICROSECONDS)

Turn-On Current Limit

751

C122

200

I00

90
80

NOTES:
I.

2.

3.

NOTES
,

JUNCTION TEMPERATURE IMMEDIATE

PRIOR TO SURGE = -40 C TO + 00 C
GATE CONTROL MAY BE LOST DURING AND
IMMEDIATELY FOLLOWING THE SURGE
CURRENT INTERVAL
CURRENT OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE HAS
RETURNEO TO WITHIN STEADY-STATE
RATED VALUE
1

CURVES APPLY FOR HALF SINE

WAVE CURRENT WAVEFORM.
THIS OVERLOAD MAY BE APPLIED
___
FOLLOWING DEVICE OPERATION AT
ANY VOLTAGE OR CURRENT WITHIN
ITS STEADY-STATE RATING LIMITS.
THE OVERLOAD MAY NOT BE REPEATED
UNTIL DEVICE JUNCTION TEMPERATURE
HAS COOLED DOWN TO WITHIN
STEADY STATE RATED VALUE.
NO BLOCKING VOLTAGE RATING IS
IMPLIED DURING OR IMMEDIATELY
FOLLOWING THE OVERLOAD CURRENT

70

50

40

30

INTERVAL.
5.

JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO OVERLOAD - -40C TO +IOOC.

Max. Allowable Surge Current

Following Rated Load Conditions
11.

20

and l^t Rating

Following Rated Load Conditions

12. Sub-cycle Surge

r-^=

NOTES:
1

2
3

1.2

CURVE DEFINES TEMPERATURE RISE OF JUNCTION

ABOVE CASE FOR SINGLE LOAD PULSE OF DURATION(t)
PEAK ALLOWABLE POWER DISSIPATION IN THYRISTOR
FOR TIME It), STARTING FROM CASE TEMPERATURE
EQUALS IOOC(MAXT) MINUS CASE TEMPERATURE
DIVIDED BY THE TRANSIENT THERMAL IMPEDANCE
IOOC-Tr
p
K
PEAK--=

2.

NOTE

Z
9JC (t)
FOR OPTIMUM RATINGS AND FURTHER INFORMATION.
SEE PUBLICATION 200.9 ENTITLED, "POWER SEMICONDUCTOR RATINGS UNDER TRANSIENT AND
INTERMITTENT LOADS"

PEAK INITATIN G ON-STATE

EQUALS 0.5 AH* PERES

JRRENT

<
0.4

0.2

0.004

0.01

0.04

TIME

0.1
(t)

CASE TEMPERATURE, TfC)

-(SECONDS)

13. Max. Transient Thermal

Impedance, Junction to Case

14.

vs.

752

DC Holding Current
Case Temperature

Max.

V
OUTLINE DRAWINGS
STANDARD

Ol. ANODE

YPt

C122

^ M D'A

'

F-

IJT

/^
-3^1

li.AD
Tff.'PE

. n
R

RATURC /'

'

RLF[.i<tNCE

POINT fp_-"
<?)--'

-XL

ANODE

"TI

CD

CATHODE

MOUNTING TAl(
!"C T H=OU.LY COMMON TOMI?,
NON ISOI.AUD DtViCt'S OMLY:
NGN ISOIAUl) [ie"V.C'S ONLY

3.

GATE

V^_

O2

CATHODE

(r! 2

-J,

U...

TERMINAL ARRANGEMENT

L |H~

-i

TYPE

METRIC

INCHES

SYMBOL

MAX

MIN

MIN
4.06

160
190
.054 TYP,

1.37

MM
MAX
4.83

.095

TYP.

MIN

14

MAX

MIN

MAX

05

2.41

2.67

.1

3.68
3.58
3.00 REF.

.145

18 REF.

.029
.110

.035

.73

.89

.120

3.05

.0015

.004

.560

.630

2.79
14.23

16.51

.570

.390

.420

9.90

10.67

.590
.220

190

.210

4.82

5.33

.040

.055

.39

.65

.040
.020
.1 72

.070
.030
.202

e2

.240
.085

H|
J|

6.09

6.60

.115

2.15

2.92

L3

.232

.01

.065
.260

.054 RET.
.500
.360

AA
AB
AC
AD
AE

1.37 RCF
1

2.70
9.14

.236

5.

89

TO -66 EQUIVALENT
(NON -ISOLATED DEVICES ONLY)

.1

MM

METRIC

INCHES

SYMBOL

.10

14 99

14.47

5.59
.01

.78

.50

.76

5.13

.097

4.36
2.20

30

3.04

.025
.045

.035
.055

.63
1.14

.353

.433

8.96

.087

.120

2.46
3.30
.8
1

.40

1.00

5.99
CENTER LEAD CUT

FLAT MOUNTING
CHASSIS HEATSINK

NON ISOLATED DtViCLS ONLY!

Re'
tn!

POT

T^_l

CENTER LEAD
CENTEP

CfNTFR L.FAD
CUT OFF

CUT-OFF

TYPE 3

TYPE 2

TYPE 4
FLAT MOUNTING
RADIATOR HEATSINK

UPRIGHT MOUNTING

wh
-z

TYPE

TZ
AB

TYPE 6

753

"a

C122

TYPICAL CIRCUIT

EMF of the motor armature due to residual field

of motor speed to maintain essentially constant speed
characteristics with varying torque requirements. There will be some variation
in the effectiveness of speed control from one motor to another depending on
the magnitude of the residual field for the particular motor.
This circuit uses the counter

as
3.SK

2W

EMF

-H

2W

above the counter EMF, current flows through CRj into the gate of the
SCR, and thus applying the remainder of that half cycle of supply voltage to the
motor. If load is applied to the motor, its speed tends to decrease, thus decreasing
counter EMF in proportion to speed. The "pot" reference voltage thus causes
current to flow into the SCR gate earlier in the cycle. The SCR triggers earlier
in the cycle, and additional voltage is applied to the armature to compensate for
the increased load and to maintain the preset speed. The particular speed at which
the motor operates can be selected by R\. Stable operation is possible over
approximately a 10 to 1 speed range. Stability at very low speeds can be
improved by reducing the value of C^ at the expense of feedback gain.
rises

GE A14B

CI

_r

signal

During the positive half cycle of the supply voltage, a reference voltage is
established on the arm of the potentiometer R^ which is compared with the
counter
of the motor through the gate of the SCR. When the "pot" voltage

CRI
IK

a feedback

l<VF
IOV

UNIVERSAL

-SE AI4B
(3

MOTOR
AMP NAMEPLATE)

OTHER APPLICATION NOTES OF INTEREST

Publication

Number
200.31

Application Notes

Phase Control of SCR's With Transformer and Other

Inductive

200.33

AC

Loads

Regulated Battery Charges Using the Silicon Controlled

Rectifier

200.43

200.44
200.47

DC Motors Provides Variable

Speed With Synchronous - Motor Performance
Speed Control for Shunt-Wound Motors
Speed Control for Universal Motors
Solid State Control for

200.48
200.55

Flashers,

201.1

A Plug-In Speed Control for Standard Portable

Tools and Appliances

201.13

Universal Motor Control With Built-in Self-Timer

Ring Counters and Chasers

Thermal Mounting Considerations for
Power Semiconductor Packages

754

Plastic

SCR
8ARMS

The CI 23
Electric's

is

molded

silicon

new POWER-GLAS

for an intimate void-free

plastic

SCR which

glassivation process.

bond between the

Up

to

600

C123

ISOLATED TAB
Volts

incorporates General
This process provides

silicon chip

and the

glass

coating significantly improving performance and reliability.

FEATURES:
Glassivated silicon chip for

Round

leads

maximum

reliability in

AC

or

DC

circuitry

greatly simplifies customer assembly

Four standard lead forming configurations

(including TO-66 compatibility)

available

from factory

Special selections for non-standard gate requirements available

JEDEC TO-220AB

upon request

TYPICAL SCR APPLICATIONS

GENERAL FUNCTIONS
Application
Process Control

Equipment

Temperature

Power

Capacitor Discharge

Control

Solenoid Driver

Regulator

Circuit

X
X

X
X

X
X

Reproduction Equipment
Blender, Mixers

Hand Tools
Machine Tools/Misc. Mfg.
Sewing Machines

Relay

X
X
X
X

Photographic Equipment

X
X

X
X
X

Clutches/Brakes
Industrial Timers

Vending Machines

Battery Chargers
Business Machines

Gas

&

X
X

Oil Ignitors

Internal

X
X

X
X

Laundry

Farm Equipment

&

Motor
Control

X
X
X

Combustion

Engine Ignitions and

Magneto Regulators

755

C123

MAXIMUM ALLOWABLE RATINGS

Repetitive Peak Off-State

Voltage,

Type

Repetitive Peak

V DRM (3)

T c = -40Cto HOOC

Non-Repetitive Peak

Reverse Voltage,

Reverse Voltage,

Vrrm(D(3)

Vrsm(1)<2)
T c = -40Cto+100C

T c = -40Cto+100C

C123F

50 Volts

50 Volts

75 Volts

C123A

100 Volts

100 Volts

200 Volts

C123B

200 Volts

200 Volts

300 Volts

C123C

300 Volts

300 Volts

400 Volts

C123D

400 Volts

400 Volts

500 Volts

C123E

500 Volts

500 Volts

600 Volts

C123M

600 Volts

6 00 Volts

700 Volts

Peak positive anode voltage (T C = -40C to +100C)

RMS On-State Current, I T (RMS)
Average On-State Current,

560 Volts
8

T (AV)

Amperes

(all

conduction angles)

Depends on conduction angle (See Charts

and 2)

Critical Rate-Of-Rise

of On-State Current, di/dt: (4)

Gate triggered operation

(see Chart 11)

Switching from 200 volts

100 Amperes per microsecond

50 Amperes per microsecond

Switching from 500 volts

Peak One Cycle Surge (non-rep) On-State Current, IxSM 50 Hz

2
I

82 Amperes

60 Hz
t

(for fusing), for times at 8.3 milliseconds

"J

1.5 milliseconds

see Chart 14

Peak Gate Power Dissipation, PGM

Average Gate Power Dissipation, Pg(AV)

90 Amperes
2
Ampere seconds
27 Ampere 2 seconds

33.7

5 Watts for 10 microseconds (see Chart 6)

0.5 Watts

Peak Positive Gate Current I G M

Peak Positive Gate Voltage, V G M
Peak Negative Gate Voltage,
Storage Temperature,

seeChart6
see

Vgm

Chart 6
5 Volts

T stg

-40C to +125C

Operating Temperature, Tj

-40C to +100C

Isolation Withstand Voltage (5)

lg00 Volts Peak

NOTES:
1

Values apply for zero or negative gate voltage only.

2.
3.

Half sine wave voltage pulse, 10 millisecond duration.

During performance of the off-state and reverse blocking
permit applied voltage to exceed the device rating.

4.

di/dt rating

is

the thyristor should not be tested with a constant source which would

EIA-NEMA Standard RS-397, Section 5.2.2.6. Off-state (blocking) voltage capability may
immediately after each current pulse for duration less than the period of the applied pulse repetition rate. The

established in accordance with

be temporarily

lost

pulse repetition rate for this test

5.

tests,

is

60

Isolation Withstand Voltage rating

is

p/s.

established in accordance with Mil-Std-202,

Method 301

for D.C. and sinusoidal

waveforms to

60 Hz.

should be recognized that the General Electric C1 23 is a developmental device

specification are typical of the device at the time this specification is issued.

*lt

756

and that the

ratings

and characteristics

listed in this

C123

CHARACTERISTICS
Test

Peak Off-state or
Reverse Current (1)

Symbol

Min.

Typ.

Max.

mA

Idrm
'RRM

Peak-On-State Voltage

Vtm

Rate of Rise of
Off-State Voltage (High-

dv/dt

10

50

or

Test Conditions

Units

VDRM

Volts

T C = +100"C
T c = +25 C, Ijm = 16A

Volts//Jsec

Tc

0.5

Critical

VdrM = Max.

allowable volts peak

T c = +25 "C

0.1

1.44

peak

Millisecond wide pulse,

= +100"C, Rated

Duty cycle

^ 2%

VD RM

Gate Open Circuited, Linear Waveform

may

cause
device switching)
er values

Circuit

Commutated

50

tq

Tc

/Usee

= +100"C,

Ixm = 10 A

peak. Rectangular

current pulse, 40 /Usee duration. Commutation

rate = -5 A//Jsec. Peak reverse voltage = Rated
volts max. Reverse voltage at end of turn-off
time interval 12 volts min. Repetition rate =

Turn-Off Time

60

pps. Rate of rise of re-applied off-state

voltage (dv/dt) =10 V//Usec. Off-state voltage =
Rated V. Gate bias during turn-off time
interval

D.C. Gate Trigger

Current

IGT

40

D.C. Gate Trigger

Vgt

volts,

100 ohms.

T c = +25 "C
V D = 6 Vdc

25

Rl = 91 ohms
T c = -40"C
Vd = 6 Vdc
Rl = 45 ohms

mAdc

T c = +25"C

1.5

VD

Voltage

= 6

Vdc

RL = 91ohms
T c = -40 U C
V D = 6 Vdc

2.0

Vdc

Rl = 45 ohms
T C = +100C

0.2

VD RM

Rated

RL =
Holding Current

mAdc

IH

source voltage = 24 Vdc, Peak initiating

on-state current = 0.5 A, 0.1 msec to 10 msec

Anode
wide

Latching Current

30

60

pulse.

Gate

trigger source

= TV, 20 ohms

T c = +25 U C
T c = -40C

mAdc

1000 ohms

Main Terminal Source Voltage = 24 Vdc, Gate

trigger source = 15 V, 100 ohms, 50 /Llsec rise
and fall times max.

Tc
Tc

60
120

= +25 C
= -40"C

C/Watt

Steady-State (2)
Thermal Resistance

R0jc

R0JA

4.0

Junction to Case

75

Junction to Ambient

NOTES:
1

2.

Values apply for zero or negative gate voltage only.

is approximately equal to Tq, see outline drawing. The junction to ambient value
#22 copper wire used for electrical contact to the terminals and natural convection.

Tl

is

under worst case conditions,

i.e.,

with

757

C123
1

[CONDUCTION

notes:

400

X"

2.

^s

\^

3.

I00
Hi.

RATINGS DERIVED FOR 0.5 WATTS AVERAGE

GATE POWER DISSIPATION.
CURVES APPLY FOR RATE OF RISE OF ONSTATE CURRENT (dl/dl). 10 AMPERS PER

>

'X

?^
\
c
^s

>

\
CONDUCTION

X^-^N

CONDUCTION

ANGLE

*j

* ONE CYCLE OF SUPPLY FREQUENCY*

x N ^ si

W^v^w^Q0 o
CONDUCTIONl
ANGLE *[

2.

RESISTIVE OR INDUCTIVE LOAD,

50 TO 400 Hz.
RATINGS DERIVED FOR 0.5 WATTS
AVERAGE GATE POWER
DISSIPATION.

'

1
0 90

3.

12

180

CONDUCTION
ANGLE = 60

uc

I20"

240"

ieo-

360

CURVES APPLY FOR RATE OF

RISE OF ON-STATE CURRENT
(di/dt) * 10 AMPERES PER MICROSECOND MAXIMUM.

40

AVERAGE ON -STATE CURRENT (AMPERES)

1.

/ t^ww^/ ^WWX^V 360

,,

~|

!*t

ANGLE

|*

AVERAGE ON-STATE CURRENT (AMPERES)

Max. Allowable Case Temperature for

Max. Allowable Case Temperature for

2.

Half-Wave Rectified Sine Wave of Current

Full-Wave Rectified Sine

Wave

of Current

DC,

07

Ilk

60

CONDUCTION

,180

ANGLE

120

NOTES:
RESISTIVE OR INDUCTIVE LOAD,
1.
50 TO 400 H;.

)0

Lit

<W 4

60!

CONDUCTION
ANG LE ' 30"

2.

RATINGS DERIVED FOR 0.5 WATTS

AVERAGE GATE POWER

notes:
resistive or inductive load,
50 TO 400 Hz.
RATINGS DERIVED FOR 0.5 WATTS
AVERAGE GATE POWER

DISSIPATION.
3.

^&
/

DISSIPATION.

CURVES APPLY FOR RATE OF

RISE OF ON-STATE CURRENT
(di/dt)=IO AMPERES PER MICROSECOND MAXIMUM.

CURVES APPLY FOR RATE OF

RISE OF ON-STATE CURRENT
(di/dt) = IO AMPERES PER MICROSECOND MAXIMUM.

3
4
5
6
7
AVERAGE ON-STATE CURRENT {AMPERES)

AVERAGE ON-STATE CURRENT (AMPERES)

3. Max. On-State Power Dissipation for

Half-Wave Rectified Sine Wave of Current

Max. On-State Power Dissipation for

4.

Full-Wave Rectified Sine Wave of Current

/
\

\
a
a.

30

Tc =IOOC

20

>
TC

u
<
o

>5*C

M AXIMUM ALLOW* BLE

STANTANEOUS G
P DWER OISSIPAT ON

3UALS S WATTS
AXIMUM FOR 10

CROSECONDS

>

<
o

Z
I

TM =I MSEC WIDE PULSE,

0SWATT MAXIMUM

****.

RECOMMENDED GATE CIRCU T

^LOAD

LINE FOR PULSE TRIG

INSTANEOUS ON-STATE VOLTAGE (VOLTS)

-^^

INSTANTANEOUS GATE CURRENT- AMPERES

Max. On-State Voltage

vs.

\v

5.

SHADED AREA REPRESENTS LOCUS OF

ALL POSSIBLE DC (20 MICROSECONDS)
GUARANTEED TRIGGERING POINTS FROM

\
AVERAGE GATE POWER
\\\
11 V^DISSIPATION EQUALS

<

JLSE

NOTES.

Pi

6.

On-State Current

758

Gate Trigger Characteristics

~-~

40

C123

2.2

35

(/>

2.0

>

< 30

1.8

III

<0

<

2 25

IB

1
-J

o
>

20
X!
rr
->

o
o

lb

1.2

1lll

LOAD RESISTOR =

1-

<
C5

0HMSAT25C,
45 OHMS AT - *0'C
91

iii

91 OHMS AT 25C
45 OHMS AT -40C.

10

10

1.

cc

NOTES.

uj

rr
t-

NOTES
ANODE V0LTAGE=6VDC
2. LOAD RESISTOR =

LLl

cc

o
o

1.4

cc

0.8

i-

<

0.6

40

10
20 30
40 -30 -20 -10
CASE TEMPERATURE -TC (C)

DC

Max.

7.

-40 -30

50

vs.

Gate Current to Trigger

Case Temperature

-20

8.

-10
10
20 30 40
CASE TEMPERATURE-TC (C)

50

60

DC

Max.

vs.

Gate Voltage to Trigger

Case Temperature

280
NOTES.
I.

240

2.

UJ
cc

cc 200

,Tc = -

40C
3.

I60

4.

RECTANGULAR GATE CURRENT

PULSE APPLIED.
RISE AND FALL EQUAL TO OR
LESS THAN 10% OF GATE
PULSE WIDTH.
ANODE VOLTAGE = 6 VDC.
LOAD RESISTOR = 91 OHMS AT
25C, 45 OHMS AT-40C.

I 50

I20
i

UJ

2 80

O
a

40

Tc = 2 5C
NOTE. PEAK INITATING ON-STATE

AMPE RES

10

14

12

18

16

-20

20

GATE PULSE WIDTH (MICROSECONDS)

9.

Max.

DC
vs.

10.

Gate Current to Trigger

Gate Pulse Width

&/

<

*o

& #1

X(/>

<

Sz

3/

,:

3.

3y

4-

4f\

10

CO

Max DC Holding Current

vs.

Case Temperature

notes:
!.
FRE 3UE NC y

P'

-10

CASE TEMPERATURE -Tc

Hz MAXIMl)M.
,

SHOWN

ft
5.

..

40

REQUIRED GATE DRIVE 10 VOLTS, 20 OHM SOURCE 10

MICROSECOND PULSE WIDTH MINIMUM, 2 MICROSECOND
RISE TIME MAXIMUM.
INSTANTANEOUS VALUE OF ON-STATE CURRENT MUST
NEVER EXCEED TURN-ON CURRENT LIMIT LINES

f
L/
*

RATING IS ESTABLISHED IN ACCORDANCE WITH

JEDEC SUGGESTED STANDARD N0.7 SECTION 5I24
OFF-STATE (BLOCKING) VOLTAGE CAPABILITY MAY BE
TEMPORARILY LOST AFTER EACH CURRENT PULSE
FOR DURATIONS LESS THAN THE PERIOD OF THE
APPLIED PULSE REPETITION RATE THE PULSE
REPETITION RATE FOR THIS TEST IS 400Hz THE
DURATION OF THE JEDEC di/df TEST CONDITION IS
dl/dt

~v
10

I.O

TIME FROM START OF CURRENT FLOW (MICROSECONDS)

11.

Turn-On Current Limit

759

C123

<
5
H
<
Q

UJ
0-

notes:

i.

curve defines temperature rise of

junction above case for single
load pulse of duration

(t).

peak

allowable power dissipation

in

thyristor for time (t), starting

from case temperature equals
iooc (max t) minus case temperature divided by the transient

or
UJ

l00 o C-Tr

P PE>!

UJ

V)

z
<
or

2.

FOR OPTIMUM RATINGS AND FURTHER

INFORMATION, SEE PUBLICATION 200.9
ENTITLED, "POWER SEMI-CONDUCTOR
RATINGS UNDER TRANSIENT AND
INTERMITTENT LOADS."
I

.004

O.OOI

.01

.04

TIME

Ill

(t)-

10

.4

.1

SECONDS

Max. Transient Thermal Impedance,

12.

Junction to Case

90
80
70

60
50

ioo

90
notes:

50 _

2.

curves apply for half sine

wave current waveform.
this overload may be applied
following device operation at
any voltage or current within
its steady-state rating limits.
the overload may not be repeated
until device junction temperature
has cooled down to within
steady state rated value
no blocking voltage rating is

cj

2 40
z
o
o
UJ
c/>
cJ

30

UJ
UJ
0.

2
<
20

implied during or immediately

following the overload current

interval.
5.

junction temperature immediately

prior to overload -40c to .iooc.

15

in

15

8 9

10

PULSE WIDTH (mSec)

PULSE WIDTH (mSec)

13. Sub-Cycle Surge Following Rated

14.

Load Conditions

760

2 t Rating Following Rated

Load Conditions

10

OUTLINE DRAWINGS
standard

--

rr

tyf>e

Ql. ANODE
- H

-0"

C123

L
l

,i

-TASL l-MPf RAT^Rf

Rl

TEMPERATuR!
REFERENCE

nRENCF

Pui.-jT

ANODE
@ CATHODE
j

3.

Ci'

GATE

(4)

MOMMTlNr, 1AB

NON

NON

ELECTRICALLY COMMON TO MT^

ISOLATED DEVICES ONLY
ISO! A T ED DEVICES GOLV

GATE

<J2. CATHODE

TERMINAL ARRANGEMENT

MM

.035

.73

.89

.029
.110

.120

3.05

.0015

.560

.650

16.51

.570

.390

.420

2.79
14.23
9.90

B
b

.190

.2

.040

.055

L3

.240
.115
.085
.054 RET.

.500
.360

.232

H|
J|

4.82

5.33

.01

1.39
.65

6.09

6.60

2.15

2.92

1.37 REF.

9.14
5.89

MIN

MAX

05

2.41

2.67
3.68

.1

3.58

.145

141

3.00 REF.

.004
.590

.10

14.99
5.59

14.47

.220

.040
.020

.070
.030

.1

72

AA
AB
AC
AD
AE

12.70

.236

MM

MAX

.118 REF.

10.67

.065
.260

TYP.

MIN

.095

4.83

1.37

10

e 2

SYMBOL

MAX

METRIC

INCHES

MIN
4.06

Ci

MF_TRIC

INCHES
MAX
MIN
190
160
.054 TYP.

SYMBOL

.01

.78

.50

.76

4.36
2.20

5.13

.087

.202
.097

.120

.1

30

3.04

.025
.045

.035
.055

1.14

.353

.433

8.96

2.46
3.30

.63
1

.89
.40

1.00

5.99
CENTER

FLAT MOUNTING
CHASSIS HEATS! NK

TO -66 EQUIVALENT
(NON-ISOLATED DEVICES ONLY)

LIT

AD CUT

(NONISOLATED DEVICES ONLY

~2

^TrS-

tr
J_.
V

I,

,i,

,!

it

nr

CENTER LEAD
CUT-OFF

TYPE

CENTER LEAD
CUT- OFF

TYPE

FLAT MOUNTING
RADIATOR HEATSINK

UPRIGHT MOUNTING

TYPE 4

::i

HH
AD

AC-

fV

"T

I
I

a
-_^AB(

TYPE

K AC

AE

a
TYPE 6

761

C123

TYPICAL CIRCUIT
UNIVERSAL MOTOR CONTROL WITH FEEDBACK

EMF of the motor armature due to residual field

feedback signal of motor speed to maintain essentially constant speed
characteristics with varying torque requirements.
There will be some variation
This circuit uses the counter

as

in the effectiveness of speed control from one motor to

another depending on
the magnitude of the residual field for the particular motor.

During the positive half cycle of the supply voltage, a reference voltage is
on the arm of the potentiometer Ri which is compared with the
counter EMF of the motor through the gate of the SCR. When the
"pot" voltage
rises above the counter EMF, current flows through CRi
into the gate of the
established

SCR, and thus applying the remainder of that half cycle of supply voltage
motor.

If

counter

load

EMF

applied to the motor,

is

its

to the

speed tends to decrease, thus decreasing

in proportion to speed.

The "pot" reference voltage thus causes

gate earlier in the cycle. The SCR triggers earlier
in the cycle, and additional voltage is applied to the
armature to compensate for
the increased load and to maintain the preset speed. The
particular speed at which
the motor operates can be selected by Ri. Stable operation is
possible over
current to flow into the

SCR

approximately a 10 to 1 speed range.

Stability at very low speeds can be
improved by reducing the value of Ci at the expense of feedback gain.

OTHER APPLICATION NOTES OF INTEREST

Publication

Number
200.31

Application Notes

Phase Control of
Inductive

200.33

AC

SCR 's With

Transformer and Other

Loads

Regulated Battery Charges Using the Silicon Controlled

Rectifier

200.43

Solid State Control for DC Motors Provides Variable

Speed With Synchronous - Motor Performance

200.44

Speed Control for Shunt-Wound Motors

200.47

Speed Control for Universal Motors

200.48

Flashers, Ring Counters

200.55

Thermal Mounting Considerations for

Power Semiconductor Packages

201.1

A Plug-In Speed Control for Standard Portable

Tools and Appliances

201 .1 3

Universal

and

Chasers.

Motor Control With

I
762

Plastic

Built-in Self-Timer

Reverse Blocking

Triode Thyristor
I

(SCR)
12 A

The CI 26

is

molded

silicon plastic

new POWER-GLAS glassivation

intimate void-free bond between the
tric's

nificantly improving

performance and

SCR which

RMS

C126

~1

Up to 600 Volts

incorporates General Elec-

process. This process provides for an

silicon chip

and the

glass coating sig-

reliability.

FEATURES:

Glassivated silicon chip for

Round

maximum

reliability in

AC

or

DC

circuitry.

greatly simplifies customer assembly.

Six standard lead forming configurations available from factory (including

leads

TO-66

compatibility).

Special selections for non-standard gate requirements available

upon

JEOEC TO-220AB

request.

Excellent surge current capability.

TYPICAL SCR APPLICATIONS

GENERAL FUNCTIONS
APPLICATION
Process Control Equipment

MOTOR
CONTROL

TEMPERATURE
CONTROL

RELAY AND
SOLENOID
DRIVER

POWER
REGULATOR

Reproduction Equipment
Blender, Mixers

Hand Tools

Machine Tools/Misc. Mfg.

Sewing Machines

Photographic Equipment

Clutches/Brakes

Industrial Timers

Vending Machines

Battery Chargers
Business Machines

Gas

&

Oil Ignitors

Internal

CIRCUIT

Laundry

Farm Equipment

CAPACITOR
DISCHARGE

X
X

Combustion Engine Ignitions

763

C126

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

TYPE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM <1)(3)

T c = -40C

to

VOLTAGE, V RRM (D

+110C

T c = -40C

to

(3)

+110C

NON-REPETITIVE PEAK RE(2)

VERSE VOLTAGE, V RSM
<

T c = -40C

to

C126F

50 Volts

50 Volts

75 Volts

C126A

100 Volts

100 Volts

200 Volts

C126B

200 Volts

200 Volts

300 Volts

C126C

300 Volts

300 Volts

400 Volts

C126D

400 Volts

400 Volts

500 Volts

C126E

500 Volts

500 Volts

600 Volts

C126M

600 Volts

600 Volts

700 Volts

RMS On-State Current, I T(RMS)

Average On-State Current, I T(AV)
Critical Rate-of-Rise of On-State Current, di/dt:W
Gate Triggered Operation

(S ee Chart 10)

100 Amperes Per Microsecond

50 Amperes Per Microsecond

Switching from 600 Volts

Peak One Cycle Surge (Non-Rep) On-State Current, I TSM 50 Hz

60 Hz
2
I t (For Fusing), at 8.3 milliseconds

113 Amperes

ar

<-

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)
Peak Positive Gate Current, I GM

'

120 Amperes
60 Ampere 2 Seconds
25 Ampere 2 Seconds
5 Watts for 10 Microseconds (See Chart 6)

0.5 Watts

(See Chart 6)

Peak Positive Gate Voltage, V GM

Peak Negative Gate Voltage, V GM
Storage Temperature,

>

12 Amperes (All Conduction Angles)

Depends on Conduction Angle (See Charts 3 and 4)

Switching from 200 Volts

1.0 milliseconds

+110C

(See Chart 6)
5 Volts

Tstg

40 C t0 +125C
.40C to +1 10C
.

Operating Temperature, Tj

NOTES:
1.

2.

Values apply for zero oi negative gate voltage only.

Half sine wave voltage pulse, 1 millisecond duration.

3.

During performance of the off-state and reverse blocking

permit applied voltage to exceed the device rating.

4.

di/dt rating is established in accordance with JEDEC Standard RS397, Section 5.2.2.6. Off-state (blocking) voltage capability may be
temporarily lost immediately after each current pulse for duration less than the period of the applied pulse repetition rate. The pulse
repetition rate for this test is 60 Hz. The number of on-state current pulses is 300.

tests,

the thyristor should not be tested with a constant source which would

I
764

C126

CHARACTERISTICS
SYMBOL

TEST
Repetitive Peak Off-State

and Reverse CurrenU

1 )

Peak On-State Voltage

Critical Rate-of-Rise

of

MIN.

TYP.

mA

Idrm
Irrm

Vtm

dv/dt

10

or

TEST CONDITIONS

UNITS

MAX.

Vdrm

v rrm

0.1

T c = + 25C

0.5

T c = +110C
Volts

1.82

= Max allowable
-

Tc = +25C, I TM = 24 Amps

Peak.

second-wide pulse, Duty Cycle

Volts/jusec

50

T c = +110C; Rated
Circuited, Linear

Off-State Voltage.

V DRM

volts

peak

Milli-

< 2%

Gate Open

Waveform.

(Higher values may

cause device switching)

Commutated
Turn-Off Time
Circuit

50

tq

/usee

T c = +110C, I TM =

10

Amps

Peak. Rec-

tangular current pulse, 40Aisec duration.

Commutation rate = -5A/jusec. Peak reverse
voltage = Rated volts

max. Reverse voltage

end of turn-off time interval 12 volts
min. Repetition rate = 60 pps. Rate-of-rise
of re-applied off-state voltage (dv/dt) = 1
V//usec. Off-state voltage = Rated V D rm
=
Gate bias during turn-off time interval
at

volts,

D.C. Gate Trigger

Current
D.C. Gate Trigger
Voltage

D.C. Holding Current

Igt

V GT

25

40

1.5

2.0

Tc

0.2

Tc

mAdc

Tc
Vdc

mAdc

Ih

100 ohms.

R L = 91 ohms
= 6 Vdc, R L = 45 ohms
=
= 6 Vdc, R L = 91 ohms
=
= 6 Vdc, R L = 45 ohms
=
= +1 10C, Rated VDRM R L = 1000 ohms

VD
-40C, V D
+25C, V D
40 C, V D

= 6 Vdc,

T c = +25C,
Tc

VD

= 24 Vdc, Peak initiating on-state current

= 0.5 Amps, 0.1 msec to 10 msec wide pulse.
R L = Variable Gate Trigger Source = 7 Volts,

20 Ohms.

Latching Current

30

T c = +25C

60

T c = -40C

mAdc

II

VD

= 24 Vdc,

Gate

50 jusec

Steady-State
Thermal Resistance

rise

60

T c = +25C

120

Tc

Rejc

R0JA

75

C/Watt

1.8

RL

= Variable.
= 15 Volts, 100 ohms,

trigger source

and

fall

times max.

= -40C

Junction- to-Case ( 2 )

Junction-to-Ambient( 3 )

NOTES:
2.

Values apply for zero or negative gate voltage only.

T L is approximately equal to T c see outline drawing.

3.

The junction-to-ambient value

1.

is

under worse case conditions,

i.e.,

with

#22 copper

wire used for electrical contact to the terminals and natural

convection.

765

en

18

<

16

z
o

14

DC/

NOTES'

)-

1.

2.

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hi

CURVES APPLY FOR RATE OF RISE OF

ON-STATE CURRENT

<

12

I20^J

a
tr

V^

180

a.

in

10

UJ

O
Q.

60

CONDUCTION^,-,, J
ANGLE
% /,

Ill

<
1-

8
b

/yyyyy/\m0

0/

to

10

1.4

2.2

1.8

2.6

3.0

MAXIMUM ON-STATE VOLTAGE

ON-STATE CURRENT

ANGLE

23456789

>

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

AVERAGE ON-STATE CURRENT

VS.

MAXIMUM ON-STATE POWER

2.

10

II

AMPERES

DISSIPATION

FOR HALF-WAVE RECTIFIED SINE WAVE

OF CURRENT

no
100

90

90
80

-CONDUCTION.

ANGLE

30

70

NOTES'

m 60
<
o

I.

J 60

RESISTIVE OR INDUCTIVE
LOAD, 50 TO 400 Hz.

JconductionL,
~~ conductionL-

CURVES APPLY FOR RATE OF

RISE OF ON-STATE CURRENT

NOTES

I.

JconductionL.
r"
ANGLE

""0

23456789
AVERAGE ON-STATE CURRENT

3.

angle
angle
ONE CYCLE OF SUPPLY FREO
I

2.

S
10

30.

II

10

AVERAGE ON-STATE CURRENT -AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR FULL-WAVE RECTIFIED SINE WAVE
OF CURRENT

23456789
AVERAGE ON-STATE CURRENT

5.

RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz.

CURRENT APPLY FOR RATE OF RISE OF ON-STATE
CURRENT

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR HALF-WAVE RECTIFIED SINE WAVE
OF CURRENT

10

AMPERES

MAXIMUM ALLOWABLE ON-STATE POWER

DISSIPATION FOR FULL-WAVE SINE

WAVE OF CURRENT
766

C126
2.8

2.6

2.4
;

2.2
i

2.0
'

'
!

'

I.4

i.2

NOTES'
ANODE VOLTAGE 6 VDC
2. LOAD RESISTOR - 91 OHMS
I

AT 25'C,45

I.O

OHMS AT

-40"C

.8
J

6
.4
.2

1.

INSTANTANEOUS GATE CURRENT

6.

-10

3.0
25
AMPERES

20

10

30

40

CO
MAXIMUM DC GATE VOLTAGE TO TRIGGER
VS. CASE TEMPERATURE
CASE TEMPERATURE, T c

GATE TRIGGER CHARACTERISTICS

7.

280

240

NOTES
I

RECTANGULAR GATE CURRENT

APP1 IFD
AND FALL TIMES EQUAL TO
OR LESS THAN 10% OF GATE
PHI

30

2.

<!F

RISE

PULSE WIDTH.
ANODE VOLTAGE = 6VDC.
4 LOAD RESISTOR = 91 OHMS AT

I60

25

NOTES
ANODE VOLTAGE
1

20

2.

= 6 VDC
LOAD RESISTOR* 91 OHMS'
AT 25*C,45 OHMS AT
-40C

I20

Jc
Tc

T_

-40

-30

-10

20

10

CASE TEMPERATURE,
8.

Tc

40

-40C

25C

10

12

14

16

18

GATE PULSE WIDTH (MICROSECONDS)

CO

MAXIMUM DC GATE CURRENT TO TRIGGER

MAXIMUM DC GATE CURRENT TO TRIGGER

VS.

80

CASE TEMPERATURE

VS.

200

GATE PULSE WIDTH

NOTES'

FREQUENCY 6OH2 MAXIMUM.

CASE TEMPERATURE =-40"C
TO + IIO'C.
3. REQUIRED GATE DRIVE 5
I0

VOLTS, 7 OHM SOURCE 10

*2
MICROSECOND PULSE WIDTH
oc
PEA PER
6
MINIMUM, 0.2 MICROSECOND
RISE TIME MAXIMUM.
*>
$/
ti* 60
4. INSTANTANEOUS VALUE OF
r/
"
.-?
ON-STATE CURRENT MUST
S 50
Sz
<5
NEVER EXCEED TURN-ON
Ouj
4v
CURRENT LIMIT LINES SHOWN.
d40
o
/
5. di/dt RATING IS ESTABLISHED
3
e
IN ACCORDANCE WITH JEDEC
STANDARD RS397 SECTION
*/
5.2.2.6. OFF-STATE (BLOCKING)
IS
j /
4
VOLTAGE CAPABILITY MAY BE
S 2
TEMPORARILY LOST AFTER
*/
g
EACH CURRENT PULSE FOR
DURATIONS LESS THAN THE
PERIOD OF THE APPLIED
iV
PULSE REPETITION RATE. THE
PULSE REPETITION RATE FOR
THIS TEST IS 60 Hz. THE
10.
DURATION OF THE JEDEC di/dt
0.1
TEST CONDITION IS 5.0 SEC MIN. ,( 300 PULSES).
TIME FROM START OF CURRENT FLOW
1.

2.

&

&

'

(MICROSECONDS)

10.

TURN-ON CURRENT LIMIT

767

C126
I20

NOTES

v\
\\60Hz
50Hz\

p90

,111111

300
1

NOTES'
CURVES APPLY FOR
HALF SINE WAVE
CURRENT WAVEFORM.
2. THIS OVERLOAD MAY

' JUNCTION TEMPERATURE IMMEDIATELY PRIOR

TO SURGE = -40 C TO + II0C
SATE CONTROL MAY BE LOST DURING AND
MMEDIATELY FOLLOWING THE SURGE
CURRENT INTERVAL
3. :URRENT OVERLOAD MAY NOT BE REPEATED
JNTIL JUNCTION TEMPERATURE HAS
RETURNED TO WITHIN ORIGINAL

uj

T-

I-

1.

<n U(r uj

BE APPLIED FOLLOWING
DEVICE OPERATION AT
ITS STEADY STATE
RATING LIMITS.
3.

THE OVERLOAD MAY

NOT BE REPEATED
UNTIL DEVICE
JUNCTION TEMPERATURE
HAS COOLED DOWN TO
WITHIN STEADY STATE
RATED VALUE.

70

4.

200

^
2583
JS

0.

3
'8

_
V)

80
70
60
50

40

NO BLOCKING
VOLTAGE RATING IS
IMPLIED DURING OR
IMMEDIATELY FOLLOWING
THE OVERLOAD CURRENT

20

INTERVAL.
5.

20

10

40

60

80 I00

NUMBER OF HALF CYCLES

11.

JUNCTION TEMPERATURE
IMMEDIATELY PRIOR TO
OVERLOAD = -40C
TO + IIOC.

MAXIMUM ALLOWABLE SURGE CURRENT

12.

FOLLOWING RATED LOAD CONDITIONS

10

PULSE WIDTH

SUB-CYCLE SURGE

AND

4 5 6 7 8 910
MILLISECONDS

t RATING
FOLLOWING RATED LOAD
l

CONDITIONS
70

2.0

i.e

III

1.6

o
z
<
o

60

SINGLE LOAD PULSE OF DURATION

LU

(t).

_i

1.0

at

LU

Z
<

D 40

X
i- 0.8

PEAK ALLOWABLE POWER

IN THYRISTOR FOR
TIME (t). STARTING FROM A
SPECIFIED CASE TEMPERATURE
EQUALS 10 C MAX. Tj MINUS
CASE TEMPERATURE DIVIDED BY

DISSIPATION

1.2

<

PEAK INITIATING ON-STATE

CURRENT EQUALS 0.5 AMPERES

1.4

NOTE:

L^^IOTE s<
^>^\. CURVE DEF INES TEMPERATURE RISE

THE TRANSIENT THERMAL

IMPEDANCE:
M0 .c-T c

0.6
2.

PpEAKl
z 8JC(0
INFORMATION.SEE
RATING
AND
FURTHER
FOR OPTIMUM
S

o 30

0.4

CON DUCTOR R &TINGS UNDER TR ANSIEU T AND

INT IRMITTEN1r LOAD S."

a?
0. 001

0.004

0.01

0.04

TIME
13.

0.

(t)-

0.4

-20

10.0

10

20

(SECONDS)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE (JUNCTION-TO-CASE)

14.

I
768

MAXIMUM DC HOLDING CURRENT

CASE TEMPERATURE

VS.

30

OUTLINE DRAWINGS

C126

STANDARD TYPE

I.

ANODE

^.CASF TtK'PFRATURE
REFERENCE POINT

ANODE
CATHODE
GATE
TAB (ELECTRICALLY COMMON TOMT2.
@ MOUNTING
NON-ISOIATED DEVICES ONLY'
@ NON ISOLATED DEVICES ONLY

2.

CATHODE

TERMINAL ARRANGEMENT

A
B
Q>

METRIC

INCHES

SYMBOL

MAX

MIN
.

60

190

1.37

.054 TYP.

.0015

16.51

.570

10.67

5.33

.39

.190

.2

10

4.82

.040

.055

.065
.260
.240
.115
.085
.054 REF.

.500

6.60

2.15

92

12.70

9.14
5.89

.236

.65

6.09

1.37 REF

.360
.232

.01

AA
AB
AC
AD
AE

.040
.020
.1 72

.004
.590

.10

14.99
5.59

.01

.78

.50

.76

5.13

.087

.097

.120

.1

30

4.36
2.20
3.04

.025
.045

.035
.055

.63
1.14

.353

.433

8.96

2.46
3.30
.8
1

.40

1.00

5.99
CENTER LEAD CUT

FLAT MOUNTING

TO -66 EQUIVALENT

(NONISOLATED DEVICES ONLY)

CHASSIS HEATSINK

(NON-ISOLATEO DEVICES ONLY)

14.47

.220

.070
.030
.202

MAX

2.67
3.68
3.58
3.00 REF.

.118 REF.

e 2

2.41

.145

.69

.420

L3

.105

141

3.05

.650

.095

.73

.390

MIN

.120

.560

J|

MAX

.035

H|

MIN

.MO

4.83
TYP.

MM

METRIC

INCHES

SYMBOL

.029

2.79
14.23
9.90

MM
MAX

MIN
4.06

-3 -I

-W
CENTER LEAD
CUT-OFF

TYPE 2
FLAT MOUNTING
RADIATOR HEATSINK

UPRIGHT MOUNTING

I
a
TYPE 6

TYPE 5
769

C126

TYPICAL CIRCUIT

EMF of the motor armature due to residual field

feedback signal of motor speed to maintain essentially constant speed
characteristics with varying torque requirements. There will be some variation
in the effectiveness of speed control from one motor to another depending on
the magnitude of the residual field for the particular motor.
This circuit uses the counter

as

During the
established

positive

half cycle of the

supply voltage, a reference voltage

is

on the arm of the potentiometer Rj which is compared with the

counter EMF of the motor through the gate of the SCR. When the "pot" voltage
rises above the counter EMF, current flows through CRj into
the gate of the
SCR, and thus applying the remainder of that half cycle of supply voltage to the
motor. If load is applied to the motor, its speed tends to decrease, thus decreasing
counter EMF in proportion to speed. The "pot" reference voltage thus causes
current to flow into the SCR gate earlier in the cycle. The SCR triggers earlier
in the cycle, and additional voltage is applied to the armature to compensate
for
the increased load and to maintain the preset speed. The particular speed at which
the motor operates can be selected by Rj. Stable operation is possible over
approximately a 10 to 1 speed range. Stability at very low speeds can be
improved by reducing the value of Ci at the expense of feedback gain.

OTHER APPLICATION NOTES OF INTEREST

Publication

Number
200.31

Application Notes

Phase Control of SCR's With Transformer and Other

Inductive

AC

Loads

200.33

Regulated Battery Charges Using the Silicon Controlled

200.43

Solid State Control for

Rectifier

200.44

DC Motors Provides Variable

Speed With Synchronous - Motor Performance
Speed Control for Shunt-Wound Motors

200.47

Speed Control for Universal Motors

200.48
200.55

Flashers, Ring Counters

201.1

A Plug-In

201

and Chasers
Thermal Mounting Considerations for
Power Semiconductor Packages

Plastic

Speed Control for Standard Portable

Tools and Appliances
3

Universal

Motor Control With

I
770

Built-in Self-Timer

Controlled Rectifier

35A RMS max., 500-1200

Volts,

125 C max. Junction Temperature

series of silicon controlled rectifiers are reverse blocking triode thyristor semiconductor devices
for use in medium power switching and phase control (50 to 400 Hz) applications requiring blocking voltages up to 1200 volts, and overage load current (single-phase, 180 conduction angle) up to 22 amperes.

The CI 37

Special features of these SCR's:

No peak forward voltage limitation

Minimum dv/dt rating of 100 volts/jusec.
Maximum di/dt rating of 150 amps/ /usee when

switching from 600 volts

High surge current capability for overcurrent protection.

MAXIMUM ALLOWABLE RATINGS

Repetitive Peak

Off-State Voltage,

VdRmO)
Type

T c = -65Cto+125C

C137E

500
600
700
800
900
1000
1200

C137M
C137S
C137N
C137T
C137P
C137PB
(1)
(2)
(3)

(2)

Repetitive Peak
Reverse Voltage
V RRM (1)<2)
T c = -65C to +1 25C

500 Volts
600 Volts
700 Volts
800 Volts
900 Volts
1000 Volts
1200 Volts

Volts
Volts
Volts
Volts
Volts
Volts
Volts

and Reverse Voltage

and V RSM (1) (3)
T c = -65C to +1 25C

V DSM

600
720
840
960
1080
1200
1400

Volts
Volts
Volts
Volts
Volts
Volts
Volts

Values apply for gate terminal open-circuited. (Negative gate bias is permissible.)
Maximum case-to-ambient thermal resistance for which maximum Vdrm and V RRM ratings apply equals 5.0^ per watt for full sine wave or
full-wave rectified sinusoidal voltage waveform. ^.O^ per watt is maximum case-to-ambient thermal resistance for pure dc voltage waveform.)
Half sine wave voltage pulse, 10 millisecond maximum duration.

RMS On-State

35 Amperes (all conduction angles)

Depends on conduction angle (See Charts 3 and 5)

Current, I T(RMS)

Average On-State Current, I T AV

Critical Rate-of-Rise of On-State Current, di/dt: <>
Gate triggered operation
Switching from 1001 volts min. to 1200 volts max
801 volts min. to 1000 volts max
601 volts min. to 800 volts max
(

600

volts

(See Chart 6)

75
100
125
150
10

max

Breakover voltage triggered operation

Peak One Cycle Surge (non-rep) On-State Current, I TSM
I 2 t (for fusing), for time = 1.0 milliseconds (See Chart 9)
for time = 8.3 milliseconds (See Chart 9)

Amperes
Amperes
Amperes
Amperes
Amperes

per microsecond
per microsecond
per microsecond
per microsecond
per microsecond

360 Amperes
300 Ampere 2 seconds
540 Ampere 2 seconds
60 Watts for 500 microseconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, P G(AV)
Peak Negative Gate Voltage, V GM
Storage Temperature, T STG
Operating Temperature, Tj
Maximum Stud Torque
(4)

Non-repetitive Peak Off-State

1.0 Watts

10 Volts

65C
65C

to

+150C

to

+125T

30 Lb-in (35 Kg-cm)

is established in accordance with EIA Standards Proposal No. 1101, Section 5.2.2.6. Off-state (blocking) voltage capability may be
temporarily lost immediately after each current pulse for duration less than the period of the applied pulse repetition rate. The pulse repetition
rate for this test is 60 Hz. The duration of the JEDEC di/dt test condition is 300 pulses minimum at 60 Hz.

di/dt rating

771

C137

CHARACTERISTICS
Test

Symbol

Peak Off-State or Reverse

Current (1) (2)

Min.

Max.

Units

Test Conditions

mA

'drm

Tc

-65<to+125t

or

'RRM
C137E

vdrm

4.0

C137M

V RRM

= 500 Volts Peak

3.0

C137S

2.8

C137N
C137T
C137P
C137PB

2.3

600
700
800
900
1000
1200

2.5

2.0
1.7

D.C. Gate Trigger Current

D.C. Gate Trigger Voltage

Igt

40
80

Vgt

2.2

mAdc

+25"C, V D = 6 Vdc, R L = 12 ohms

T c = -65t, V D = 12 Vdc, R L = 12 ohms
T c = +25 1, V D = 6 Vdc, R L = 12 ohms
T c = -651C, V D = 12 Vdc, R L = 12 ohms

Tc =

Vdc

3.0

0.25

Peak On-State Voltage

Vtm

2.3

Volts

Tc
Tc

mAdc

Anode supply

= + 125<C, Rated V DRM R = 1000 ohms

L
= + 25C, I
TM = 70 A peak, 1 msec wide pulse.
,

Duty cycle g 2%.

Holding Current

Ih

= 24 Vdc, Gate supply = 10 V, 20 ohms.

Forward Current Pulse = 0.5 A, 0.1 to 10.0 msec wide
T C = +25T'
Initial

100
Critical

Rate of Rise

dv/dt

200

100

of Off-state Voltage.
(Higher values may cause

T c = -65"C
T c = +125'C, Rated

Volts/

V DRM

Gate open circuited.

//sec

device switching.)

Thermal Resistance
Circuit

Commutated

R0jc

1.0

"C/watt

tq

_(3)

Usee

Junction-to-case, dc

Tc =

Turn-Off Time

1251C,

TM

10A Peak Rectangular Current

Pulse,

50 Usee duration. DI/DT < 10 Amps per microsecond.

Commutation Rate < 5 A per Usee. PRV = Rated V RRM
Volts max. Reverse Voltage at end of Turn-Off Time interval
= 15 volts. Repetition Rate = 60 PPS. Rate of Rise of Reapplied Off-State Voltage (dv/dt) = lOOV/jUsec. Off-State
Voltage = Rated V DRM Volts. Gate Bias during Turn-Off
Time interval = Volts, 100 ohms.

NOTES:
(1)
(2)
(3)

Values apply for gate terminal open-circuited. (Negative gate bias is permissible.)
Maximum case-to-ambient thermal resistance for which maximum V
DRM and V RRM ratings apply equals 5.0T: per watt for full sine wave or
full-wave rectified sinusoidal voltage waveform. (3.0C per watt is maximum case-to-ambient
thermal resistance for pure dc voltage waveform )
urn-oil
time is not 100% factory tested. Special selections are available upon
1
request. Consult factory. The test conditions shown represent
standard factory test conditions for special selections.

NOTES:
1.

OUTLINE DRAWING

Complete threads to extend

within 2Vi threads of seating
plane. Diameter of unthreaded

(COMPLIES WITH JEDEC TO-48)

249" (6.32MM) Maximum, .220" (5.59MM) Minimum.

portion.

2.

Angular orientation of these

terminals

3.

is undefined.
Vi-28 UNF-2A. Maximum pitch
diameter of plated threads

be basic pitch diameter

.2268" (5.76MM), minimum
pitch diameter .2225"
(5.66MM),
reference:
screw
thread standards for Federal

SYMBOL

Service 1957,
1957, PI.
4.

5.
6.

Handbook H28,

3,4 85

.505

8.38

0b

.115

.140

2.92

3.56

0bi

.210

.300

5.33

*7.62

.544

.562

13.82

14.27

.113

.200

2.87

5.08

Fi

.060

chamfer (or undercut) on

one or both ends of hexagonal portions is optional.
Case is anode connection.
Large terminal is cathode con-

J
J,
1

nection.
7.

Small terminal

is

gate connec-

Insulating kit available

SEE NOTES
2

upon

request.

A. Vi-28 steel nut,

.178 min. thk.
B.

Ext.

steel,

thk.

tooth

Ni.

13.82

8 7

lockwasher,

772

1.52

1.193

30.30

.875

22.23

.120

3.05
1

.422

.453

0t

.060

.075

1.52

1.91

</>h

.125

.165

3.18

4.19

plated,

Ni. plated, .023 min.

12.83

0M

tion.
8.

.544

</>D

MIN. MAX.

.330

r-

MILLIMETERS

shall

SEE NOTES

INCHES
MIN. MAX.

10.72

11.51

C137

JUNC TION TEMPERATlIRE>

^1 !5C

I0

-25

!5C-

3
4
2
INSTANTANEOUS ON-STATE VOLTAGE

1.

VOLTS

12

16

20

24

28

32

AVERAGE ON- STATE CURRENT-AMPERES

MAXIMUM ON-STATE CHARACTERISTICS

MAXIMUM ON-STATE POWER DISSIPATION FOR

HALF WAVE RECTIFIED SINE WAVE OF CURRENT

2.

NOTES

I20

2.

no

^^^

3.

OR INDUCTIVE LOAD AT 50 TO 40 Hz
ANODE CURRENT RATE
MUM
R ATINGS DERIVED FOR 1.0 WATT A /ERAGE GA rE
POWER DISSIPATION

R ESISTIVE

C URVES APPLY FOR

I00
RE SISTANCE CASE TO

MBIENT

90
80

CONDU :tion
A NGLE'30*

70

60*

90

120**

180

60

D.C^

50
40

30
20

0"
10

18

CONDU CT ION
ANC L

AVERAGE ON-STATE CURRENT- (AMPERES)

3.

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

HALF WAVE RECTIFIED SINE WAVE OF CURRENT

773

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

4.

1000

C137

'

U
*600
NOTES
FREQUENCY

2.

3.

RATINGS DERIVED FOR

1.0

400

3.

&$&%

PER WATT MAXIMUM THERMAL RESISTANCE,

CASE -TO-AMBIENT-

8.3%

5.

LIMIT LINES SHOWN.

dl/dt RATING IS ESTABLISHED IN

EXCEED TURN-ON CURRENT

100

80

<

60

u
m

40

CYCL

_J

* tf

ACCORDANCE WITH EIA

.W
LOST AFTER EACH CURRENT
PULSE FOR DURATIONS LESS
THAN THE PERIOD OF THE
APPLIED PULSE REPETITION
RATE. THE PULSE REPETITION
RATE FOR THIS TESTIS 60HX.
THE DURATION OF THE JEDEC
d /d f TEST CONOITION IS
i

300 PULSES MINIMUM AT

60 Hz

in

06

100)

(II

TIME

6.

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

RECTANGULAR CURRENT WAVEFORM

0.8

1.0

FROM START OF CURRENT FLOW - MICROSECONDS

TURN-ON CURRENT LIMIT

400

1.0
1

0.4

CURVE DEFINES TEMPERATURE RISE OF JUNCTION ABOVE

CASE TEMPERATURE FOR SINGLE LOAD PULSE OF
DURATION t. PEAK ALLOWABLE DISSIPATION IN
THYRISTOR FOR TIME t, STARTING FROM CASE
TEMPERATURE, EQUALS I25*C (MAXIMUM T.)MINUS
J
CASE TEMPERATURE DIVIDED BY THE
TRANSIENT THERMAL IMPEOENCE

I23C-T

0.1

PPEAK

-=

SJC(t)

0.04
2.

FOR OPTIMUM RATING AND FURTHER INFORMATION, SEE

PUBLICATION ON 200.9 ENTITLED "POWER
SEMICONDUCTOR RATINGS UNDER TRANSIENT
AND INTER MITTEN T LOADS"

NOTE
JUM CTION TEM PER ATUR E IMMEDIATELY PRIOR
TO SURGE -6!>"C TO 2: c

01

TIME

(t),

SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE,

JUNCTION-TO-CASE

7'
6

20

10

CYCLES AT 60 Hz
8.

MAXIMUM ALLOWABLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT

FOR HALF-SINE WAVE

OF CURRENT

300
250

1
T

800
700
600

500
NOTES'
I.

2.

3.

4.

THIS OVERLOAD

"

150
i

9.

MAY

BE APPLIED FOLLOWING
DEVICE OPERATION AT ANY
VOLTAGE OR CURRENT WITHIN ITS
STEADY STATE RATING LIMITS.
THE OVERLOAD MAY NOT BE REPEATED UNTIL
OEVICE JUNCTION TEMPERATURE HAS COOLED
DOWN TO WITHIN STEADY-STATE RATED VALUE.
NO BLOCKING VOLTAGE RATING IS IMPLIED DURING
OR IMMEDIATELY FOLLOWING THE OVERLOAD
CURRENT INTERVAL.
JUNCTION TEMPERATURE IMMEDIATELY PRIOR TO
OVERLOAD -65"C TO +I25'C.

4
5
6
7
PULSE BASE WIDTH-MILLISECONDS
2

2.5

MAXIMUM ALLOWABLE SUB-CYCLE SURGE

CURRENT AND |2T RATING

(NON-REPETITIVE) ON-STATE

REQUIRED GATE DRIVEMOVOLTS,

<

AVERAGE ON-STATE CURRENT AMPERES

5.

rrv

INSTANTANEOUS VALUE OF ON

4.

< 20
3
.-

* 200

50%

33%

iS%

I6.7T<

MAXIMUM.

*
o
DUTY CYCLE

SECONDS PULSE WIDTH MINIMUM,

v\

k
a

WATT AVERAGE GATE

4. 5' C

*
M%y

<

50 TO 400 H Z.
CURVES APPLY FOR ANOD E CURRENT RATE OF

200

250

300

350

400

450

INSTANTANEOUS GATE CURRENT-MILLIAMPERES

10.

774

PULSE GATE TRIGGER CHARACTERISTICS

CI 38,9

SCR

The General

CI 38 and CI 39

Electric

Series of Silicon Controlled Rectifiers are reverse blocking

power switching
from 500 to 800 volts and load currents up to 35
frequencies up to 25 kHz. Refer to CI 40 and CI 41 series for blocking voltages

triode thyristor semiconductor devices designed primarily for high-frequency

applications which require blocking voltages

amperes RMS,

at

from 100 to 400

volts.

The C138, C139 family of

first

inverter

SCR's

utilizes a

new

voltage rating system which, for the

time allows high voltage blocking capability with the short turn-off time characteristics of a

low blocking voltage

SCR

Equipment designers can use the C138 and C139 SCR's in demanding applications such as:
choppers, inverters, regulated power supplies, cycloconverters, ultrasonic generators, high
frequency lighting, sonar transmitters, radar transmitters, and induction heaters.

MAXIMUM ALLOWABLE RATINGS

Peak or DC
Switching Voltage

Repetitive Peak OffState Voltage,

(2X3),

V DRM

+125C

Type(l)

V DM orVD

Tc =-65Cto

(2X3)

Tc =-65Cto+125C

Repetitive Peak

Non-Rep. Peak

Reverse Voltage

Reverse Voltage

(2X3)T C -65Cto+125"C

V RRM

V RSM

(2)(4)T C =

-65Cto+125 C

C139E10E, C139E20E
C138E10E, C138E20E

500 Volts
500

500 Volts
500

500 Volts
50

600 Volts

C139M10M, C139M20M
C138M10M, C138M20M

600
600

600
600

600
50

720

C139S10M.C139S20M
C138S10M, C138S20M

700
700

600
600

600
50

720

C139N10M, C139N20M
C138N10M, C138N20M

800
800

600
600

600
50

720

RMS

35 Amperes

On-State Current, I T(R MS )

(all

conduction angles)

Critical Rate-of-Rise of On-State Current, di/dt: (5)

Gate triggered operation:

100 Amperes per microsecond

100 Amperes per microsecond

Switching from 500 volts (500 volt types)

Switching from 600 volts (600, 700, 800 volt types)

Peak One Cycle Surge (non-rep) On-State Current, I TS m

Peak Rectangular Pulse Surge (non-rep) On-State Current (5.0 Msec,
I 2t

(for fusing), for times

t r =50psec)I

40 Watts for

Peak Gate Power Dissipation, P GM

Peak Reverse Gate Voltage,
Storage Temperature,

TSM

165 Ampere 2 seconds

0.5 milliseconds

Average Gate Power Dissipation, P G

200 Amperes
180 Amperes

AV

00 Microseconds
1.0 Watts

10 Volts

V GM

T STG

-65X1
-65"C

".

Operating Temperature, Tj

to
to

+150T
+125t

30 Lb-in (35 Kg-cm)

Maximum Stud Torque

775

C1 38 9
#

CHARACTERISTICS
Symbol

Test

Peak Off-State

Min.

Max.

Units

Idrm

T c = -65Cto+125C

Current (2)(6)

C139E10E, C139E20E
C138E10E, C138E20E

C139M10M, C139M20M
C138M10M, C138M20M
C139S10M, C139S20M
C138S10M.C138S20M
C139N10M, C139N20M
C138N10M, C138N20M

_
_
_
_

Peak Reverse
Current (2)(6)

Test Conditions

_
-

mA

4.7

V DRM

500 Volts Peak

500 "
600 "
600 "
700 "
700 "
800 "
800 "
>

4.7

4.0
4.0
4.0
4.0
4.0

>

>

>

>

4.0

T c = -65Cto+125C

Irrm

C139E10E, C139E20E
C138E10E, C138E20E

C139M10M, C139M20M
C138M10M, C138M20M
C139S10M, C139S20M
C138S10M, C138S20M

C139N10M.C139N20M
C138N10M, C138N20M
Rate of Rise of
Off-State Voltage

_
_
_

_
-

mA

8.5

7.5
7.5
7.5

7.5
7.5

D.C. Gate
Trigger Current

Igt

D.C. Gate
Trigger Voltage

Vgt

'

"

'

"

>

"

V DRM

Tc =

180
500

mAdc

Tc
Tc

3.0

Vdc

125C, Rated

Gate Open

Waveform

= 25C, V D = 6Vdc, R L = 4 ohms

= -65C, V D = 6Vdc, R L = 2 ohms

T c = 25C, V D = 6 Volts, R L = 4 ohms

T c = -65C, V D = 6 Volts, R L = 2 ohms
T c = 125C, Rated V DRM R L = 500 ohms
,

4.0

Volts

Voltage

Holding Current

"

Circuited, Exponential

0.25

V tm

'

"

Volts/

4.5

Peak On-State

"

"

Usee

dv/dt

= 500 Volts Peak

"
"

50
600
50
600
50
600
50

7.5

200

Critical

V RRM

7.5

mAdc

Ih

T c = 25C, I TM = 100
wide pulse. Duty cycle

A Peak, 1,22
g 2%.

msec.

Anode Source Voltage = 24 Vdc Peak

Initiating On-State Current = 3 A, 0.1 to

10
= 25C, Gate source = 10V,
Open Circuit, 20 ohms, 100 /Usee pulse
T c = -65C, Gate source = 20V, Open
Circuit, 20 ohms, 100 jUsec pulse.

150

350

Pulse Circuit

tq

Commutated Turn-Off

(pulse)

10,

20,

C139

10,

10

20,

20

/Usee

Types

C138

C139

pulse.

Tc =

115C,

TM = 100A Peak ApproximateCurrent Waveform. See Chart

for time references. On-State Current Pulse
Time to peak (t 2 -t-|) = 1.0 /Usee. On-State
Current Pulse Base (t 3 -t-,) = 2.0 /Usee
(+0.5-0 /Usec).Repetition Rate = 400 PPS.
PRV (t 5 ) = 250 Volts max. Reverse voltage
(t 6 ): CI 38 (with inv. para, diode) = 1 Volt.
C139 = 30 Volts. Peak Off-State Voltage (t 8 )
= Rated V
DRM Peak Off-State Voltage (t )
equals: 500 Volts for 500 Volt types; 600
Volts for 600, 700 and 800 Volt types. Rate
of Rise of Re-applied Off-State Voltage
(Linear Ramp): (t 6 to t 8 ) = 200 Volts per
jUsec. Gate Trigger Pulse = 20 Volts, 20 ohms.
Gate Trigger Pulse Width (90% points) = 1.5
I

ly Sinusoidal

Time

C138

Tc

msec

/Usee

Types

Gate Trigger Pulse Rise Time (10% to

0.1 /isec. Gate Bias during Turn-Off
time interval =
Volts, 20 ohms.

/usee.

90%) =

776

C138,9

CHARACTERISTICS
Test

(Contd)

Symbol

Min.

Max.

Units

R0jc

1.0

C/Watt

Steady State Thermal

Test Conditions

Junction to Case

Resistance

Conventional Circuit
Commutated Turn-Off

Tc =

tq

125,

10A Peak Rectangular

DI/DT <
microsecond. Commutation

TM

Current Pulse, 50 /Msec duration.

10 Amps per
Rate 5A per /Usee. PRV = Rated V RRM
Volts max. Reverse Voltage at end of
Turn-Off Time interval; CI 39 = 15 volts.

Time

C138-X0-, C139-10-,

10

/usee

Types

inv. para, diode) = 1 volt.

Repetition Rate = 60 PPS. Rate of Rise of

CI 3 8 (with

C138-20-

C139-20-,

20

Re-applied Off-State Voltage (dv/dt) = 200V/

Off-State Voltage = Rated V DRM Volts.
Gate Bias during Turn-Off Time interval =

/Usee

Types

/zsec.

Volts.

100 ohms.

NOTES:
(1)

Type designations

are defined as follows, using

20

C139S20M

as

an example:

M
Rated Switching Voltage
Turn-Off Time (10 = 10/Usec; 20
Rated Repetitive Peak Off-State Voltage

Maximum
C138 and C139 types
(2)

(3)

Maximum

case to

(4)

Half sine wave voltage pulse, 10 millisecond max. duration.

di/dt rating

established in accordance with

is

permissible).

(5)

may be

is

ambient thermal resistance for which maximum voltage ratings apply equals 1.2C degrees per watt for V D
V DRM and V RRM See paragraph, "Basis for Voltage Rating" for further information.

voltage), 3.0C degrees per watt for

capability

/Usee.)

differ in reverse voltage rating only.

Values apply for gate terminal open circuited. (Negative gate bias

(DC

20

JEDEC

Suggested Standard No.

7,

Section 5.1.2.4 Off State (blocking) voltage

temporarily lost immediately after each current pulse for duration

less

than the period of the applied pulse

The pulse repetition rate for this test is 400 H z The duration of the JEDEC di/dt test condition is 5.0 seconds
(minimum). Required gate drive = 20 volts, open circuit, 20 ohm source, 0.1 microsecond rise time, 1.5 microsecond pulse
width. Repetitive di/dt capability is incorporated into peak current rating charts included in this specification sheet.

repetition rate.

(6)

Maximum

case to ambient thermal resistance for which

maximum V DRM and V RRM

ratings apply equals 3.0 degrees

per

watt. See paragraph entitled "Basis of Voltage Ratings", for further information.

PRELIMINARY DATA
These ratings and characteristics are not necessarily definitive and are based only on the tests and findings made to date. Inasmuch as
may be acquired, General Electric Company reserves the right to change these preliminary data without notice.
Please contact your local General Electric Electronic Component Sales Manager for the latest status of data prior to ordering devices

further information

to the limits indicated

by the

data.

I
777

C138,9
BASIS OF

VOLTAGE RATINGS

For The C139 and C138 Thyristors

The C139 and C138
CI 39

values for the

thyristors are characterized primarily for inverter service.

are based

The voltage

ratings, off-state current

and reverse current

on the voltage waveform shown below:

UJ

<
OT
^

800700600-

/PERMISSIBLE SWITCHING
(VOLTAGE LEVELS

500"

UJUJ

500600-

UJO

25
50
75
ONE CYCLE OF APPLIED VOLTAGE

This waveform requires the use of a device case to ambient thermal resistance of 3.0 deg
stability under maximum rated voltage and temperature conditions.

PER CENT
OF CYCLE

I00-*

(lOHz T0 25KHZ)

per watt in order to assure thermal

The waveforms of the actual application must stay within the envelope shown for each voltage type. If the actual waveforms do not
stay within the envelopes shown for each voltage type then a heat sink with less than 3.0 deg C per watt must be used. Consult
factory for assistance in heat sink selection to assure thermal stability.

The CI 38 type

PRV

of 50 volts. It is intended for use in applications where an inverse parallel rectifier diode
connected across the CI 38 which will limit the applied reverse voltage to the forward drop of
the inverse parallel diode. Therefore in the waveform envelopes shown above for the CI 39 the reverse voltage portion does not apply
for the C138. R>r the C138 it is permissible for the off-state voltage at the switching voltage level to be extended from 50% to 95%
of the total cycle time.
thyristor has a rated

(sometimes called a feedback diode)

is

OUTLINE DRAWING
NOTES:
1. Complete threads

to

extend to

(COMPLIES WITH JEDEC TO-48)

within 2Vi threads of seating

plane. Diameter of unthreaded
portion .249" (6.32MM) Maxi-

mum, .220" (5.59MM) Minimum.

Angular

orientation of these
terminals is undefined.
3. V4-28 UNF-2A. Maximum pitch
diameter of plated threads shall
be basic pitch diameter .2268"
2.

(5.76MM), minimum pitch diam(5.66MM), reference:

screw thread standards for Fed-

SEE NOTES
3,4

eral

Service

957,

85

r-

is

5.

Case

is

6.

Large terminal

optional.
anode connection.

Small terminal

.115

.140

2.92

3.56

*1

.210

.300

5.33

7.62

cathode con-

.544

.562

13.82

14.27

.113

.200

2.87

5.08

is

gate connec-

1.52

.060

30.30

1.193

22.23

.875
l

tion.

SEE NOTES

Insulating kit available upon request.

A. Vi-28 steel nut, Ni. plated, .178

min. thk.
tooth

lock washer,
steel , Ni. plated, .023 min.

13.82

.544

3.05

120

0M

is

NOTES

0b

8.

B.

12.83

nection.
7.

MAX.

8.38

.505

tions

MILLIMETERS

MIN.

.330

Handbook

H28, 1957, PI.

chamfer (or undercut) on one
or both ends of hexagonal por-

INCHES
MIN. MAX.

CD

eter .2225"

4.

SYMBOL
A

Ext.

thk.

778

8 7

.422

Ot

.060

.075

Ot,

.125

.165

.453

10.72

11.51

.52

1.91

3.18

4.19

WAVE DATA

SINE

II

Mi~|

Tr

jr\\

65 * c

CI 38, 9

NOTES'

MAXIMUM CASE TEMPERATURE 66*

FOR SINUSOIDAL CURRENT WAVEFORM ONLY
MINIMUM CIRCUIT TURN-OFF TIME
CI39I0 C138 I0 -lO^SEC
CI39-20, CI3820 -20/tSEC
4. MAXIMUM CIRCUIT dw/dl- ZOO V/^SEC
5.RATED VpRM .RATED SWITCHING VOLTAGE
6 REVERSE VOLTAGE
V RM * Z50 VOLTS (CI39), 90 VOLTS (C138)
V R - SO VOLTS (CI39),1 VOLT (COS WITH
INVERSE PARALLELDIODE)
7. REQUIRED GATE DRIVE
20 VOLTS OPEN CIRCUIT, 20 OHM SOURCE
I.S^SEC M1N. PULSE WIDTH
1.

2.
3.

iooo
eoo
* 600
z

u 400
a:

JoH 200
4

*-^K

Z
<
-

ic

&>

:!s^e

BO

^S.'

60

'^

40

"^0 V\

iPn

saggo

25,O n l11

IOOO
2000
2O0
400
PULSE BASE WIDTH - MICROSECONDS
100

Maximum

1.

allowable peak on-state current

.T C -9' *C

r\

vs.

pulse width (Tc

- 65C)

FOR SINUSOIDAL CURRENT WAVEFORM ONLY

.MINIMUM CIRCUIT TURN-OFF TIME
CI39-I0, CI38-10 -lO^SEC
CI39-20 CI38-20 -20^SEC
.

.REVERSE VOLTAGE
VRM -250 VOLTS (CI 39), 50VOLTS (CI38
Vr- 30V0LTS IC139), VOLT (CI38 WrTH
INVERSE PARALLEL DIODE)
REQUIRED
7.
SATE DRIVE
20 VOLTS OPEN CIRCUIT.20 OHM SOURCE
I.5/.SEC MIN- PULSE WIDTH
t

Charts
the

1,

E iooo
800
? 600

2 and 3 give

maximum value

*"

of

peak on-state current

at

400

200
T*\*.,

ft

which the specified

turn-off-time and dv/dt
still

apply.

,oo

<

80

go

=^.

40

20

25,000
10

2n ,T

..

2.

fa.

->J^

Maximum

20

Vf.-

"V

V'
V

^ s<

*.

k
*3>

IT
4000

2 30
4 30
)00
20 00
00
PULSE BASE WIDTH-MICROSECONDS

allowable peak on-state current

vs.

poo

10

pulse width (Tq

90C)

- NOTES:

r\

jr\
e

2.

FOR SINUSOIDAL CURRENT WAVEFORM ONLY

MINIMUM CIRCUIT TURN-OFF TIME

CI39 20
CI38-20 '20/iSEC
MAXIMUM CIRCUIT dv/dt-200V/>tSEC
RATED Vqrii .RATED SWITCHING VOLTAGE
6. REVERSE VOLTAGE
,

4.

3.

V RM >2S0 VOLTS (CI39),50V0LTS (CI38)

V R "30 VOLTS (1391,1 V0LT(CI38 WITH INVERSE PARALLEL

E IOOO
" 800

60

0.1*

SEC MAX- RISE TIME

400

ft

'0

5
<
-

ioo

80

iss*-^

60

-.20o

40

20

'0

Hi

10
1

3.

gw.

:==-

^
10

Maximum

i 0

hSl

rp^,

- 1*.

1ff "^

OOO
20CO
21 JO
4 30
PULSE BASE WIDTH -MICROSECONDS

00

allowable peak on-state current

779

vs.

40 00

10

poo

pulse width (Tq

115C)

CI 38, 9
NOTES:

1000

USE FOR CALCULATING APPROXIMATE

AVERAGE POWER DISSIPATION FOR NONSINUSOIDAL CURRENT WAVEFORMS.
Z.CASE TO AMBIENT THERMAL RESISTANCE
REQUIREMENTS FOR THERMAL STABILITY
MUST BE MET. SEE PARAGRAPH ENTITLED
" BASIS OF VOLTAGE
RATINGS" FOR
FURTHER INFORMATION.
I.

This chart gives the instantaneous power

dissipated within the SCR as a function of
time from start of current flow and the
instantaneous value of on-state anode current.
Used as follows, this chart yields
average dissipation information for any anode
current wave-shapes:
1. Plot the anode current waveform on

00

this chart.

200

2.

100

3.

4
IO
I00
40
I000
TIME FROM START OF CURRENT FLOW-/J.SEC

4.

On linear paper, replot instantaneous

on- state power dissipation versus time.
The area under the curve gives watt
seconds of energy dissipated per anode
current pulse.
Multiply the energy by the repetition
rate to give average power dissipation.

10,000

Instantaneous On-State Power Dissipation

SWITCHING VOLTAGE

CURRENT | VOLTAGE
GROUND

INVERSE PARALLEL
DIODE
(FOR CI38

TYPES

OSCILLOSCOPE

CONNECTIONS

=
-r\
5.

Waveforms For Pulse Turn-Off Time Test

1.

2.

1000

UJ
IE
oc

3
u
u

Pulse Turn-Off

Time

Basic Test Circuit

NO its'

3.

<
z

6.

AVERAGE POWER DISSIPATION =

ENERGY PER PULSE X RER RATE
CONDITIONS STATED ON SINUSOIDAL CURRENT
RATING CHARTS APPLY.
CASE TO AMBIENT THERMAL RESISTANCE
REQUIREMENTS FOR THERMAL STABILITY
MUST BE MET. SEE PARAGRAPH ENTITLED
"BASIS OF VOLTAGE RATINGS"

400
200

I-

v,

100

z
o
5

40

vNofe

2%

<v
&v,

This chart provides a rapid means

of determining anode dissipation
with half-sine-wave pulses. Multiply the energy per pulse by the
repetition rate to obtain average

UJ

20

wo >&=>.

J^S^

10
10

7.

anode

V"

20
100 200 400
40
1000 2M
PULSE BASE WIDTH -MICROSECONDS

4M

Energy Per Pulse For Sinusoidal Pulses

780

I0M

40M

I00M

dissipation.

LOW

di/dt

C138,9

RATE DATA

This chart gives the guaranteed

turn-off time of the C138 and

maximum
C139

as a

function of the on-state current. The use of

this chart is necessary for rectangular anode
current pulses of the specified pulse width
and frequency.

NOTES:

RECTANGULAR CURRENT PULSES, 50

MICROSECOND MINIMUM DURATION.
2. SEE CHARACTERISTIC TABLE FOR
OTHER TEST CONDITIONS.

30
40
50
70
60
80
90
PEAK ON-STATE CURRENT -AMPERES

20

10

Maximum

Conventional Circuit-Corn mutated

Turn-Off Time vs Peak On-State Current

no

I00

180

NOTES:
APPLIES FOR ANODE CURRENT RATE OF RISE OF
PER MICROSECOND.
2. MAXIMUM CIRCUIT dv/dt = 200 VOLTS PER pSEC.
3. SEECHART 8
FOR APPLICABLE TURN-OFF TIME
4. RATINGS DERIVED FOR 10 WATT AVERAGE GATE

10

1.

160

140

POWER

5.

AMPS

LIMIT.

DISSIPATION.

CASE TO AMBIENT THERMAL RESISTANCE. REQUIREMENTS

FOR THERMAL STABILITY MUST BE MET. SEE PARAGRAPH
ENTITLED "BASIS OF VOLTAGE RATINGS"

100

This chart is used when the SCR is carrying

rectangular current with no significant turnon switching duty.

30

40
50
70
60
80
90
PEAK ON-STATE CURRENT-AMPERES

I00

MO

720

i3o

9-

Maximum

Allowable Case Temperature For

Rectangular Current Waveform

160

NOTES:
I.

JUNCTION TEMPERATURE

= 125

140
3.

120

OF 10 AMPERES PER MICROSECOND.

RATED AVERAGE GATE POWER DISSIPATION AND
BLOCKING LOSSES INCLUDED.

""
This chart provides a rapid means of determining SCR dissipation with low values of

100

4y

di/dt.

a*/
S2

80

SY

^ % DU TY CYCLE ^29

60
'

A/

40

1</^
s\

\&\

%^^

7
20

10.
10

40
70
50
60
80
PEAK ON-STATE CURRENT-AMPERES

30

90

100

781

110

Average Power Dissipation For Rectangular

Current Waveform

C138,9

I000

800
NOTION TEMP =25

600
I25-C

400

S 200

IE

I00

//
80

//

60

//
//
12

NOTE

WAVEFORM WITH RISE TIME,

ZERC TO PEAK, g IOOjiSEC.

5c//25 c

40

//
20

10

10

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

11.

Maximum

On-State Characteristics

I
782

12

14

C140(2N3649-53|

SCR

C141|2N3654-58]

The General Electric C140 and C141 Series of Silicon Controlled Rectifiers are reverse blocking
switching
triode thyristor semiconductor devices designed primarily for high-frequency power
amperes
to
up
currents
35
load
and
400
volts
to
up
applications which require blocking voltages

RMS,

at frequencies

up

to 25

kHz.

commutated applications (phase control, AC switching) at power line frequencies, up

amperes RMS, the following preferred SCR types are recommended: C35 (Pub. #160.20),
and C137 (Pub. #160.45).

For

line

to 35

The C140 and C141 Series feature:

Contoured junction surfaces for high-voltage stability

Shorted emitters for high dv/dt (200V/ M sec)
Distributed gates for high di/dt (400A//xsec)

The improved dynamic characteristics and the interdynamic balance

^_

X\
off

SINUSOIDAL WAVEFORM
180 CONDUCTION

\OpS

ICI4M

I5>JS

IC140)

>>

of these characteristics permit the

operation of these General Electric

SCR's up to 25 kHz with specified

^S

turn-off

65 C CASE

400V BLOCKING
|

500

IK
IN

main-

2K

5K

I0K

HERTZ

Equipment designers can use the C140 and C141

in

and dv/dt

FREQUENCY

SCR's

times

tained.

demanding applications such

This specification sheet uses a simpligied

and easy-

to-use rating system which graphically presents:

as:

Choppers

Inverters

Regulated power supplies

Case Temperature
Peak Anode Current
dv/dt and Turn-off Times

Cycloconverters
Ultrasonic generators

for rectangular

High frequency lighting

forms

and sinusoidal anode-current wave-

Sonar transmitters
Induction heaters

Radio transmitters

783

MAXIMUM ALLOWABLE RATINGS

C140 C141
f

NON-REPETITIVE

DC FORWARD BLOCKING
VOLTAGE V (1)
T.- = -65Cto +120*C

PEAK FORWARD VOLTAGE

PFV (1)

C140F (2N3649)
C141F (2N3654)

50 volts*

50 volts*

50 volts*

75 volts*

C140A (2N3650)
C141A (2N3655)

100 volts*

100 volts*

100 volts*

150 volts*

C140B (2N3651)
C141B (2N3656)

200 volts*

200 volts*

200 volts*

300 volts*

C140C (2N3652)
C141C (2N3657)

300 volts*

300 volts*

300 volts*

400 volts*

C140D (2N3653)
C141D (2N3658)

400 volts*

400 volts*

400 volts*

500 volts*

TYPE

Turn-On Current Limit (See Chart

To

= -65Cfo + 120C

DC REVERSE
VOLTAGE V RO (1)
T,-

PEAK REVERSE VOLTAGE

(Half Sine Wave)
Vhom (nan-rep) (1)
T. = -65C!o +1J0"C

= -65Clo + I2#*C

10).

400 amperes per yusec*

35 amperes
DC Forward Current, On-State, T ~ = 40C_
25 amperes*
Peak Rectangular Surge Forward Current (5.0msec width, t r = SO^sec) I FM (surge)
180 amperes*
Pt (for fusing)
_
165 ampere 2 seconds (for times ^ 1.0 millisecond)
Peak Gate Power Dissipation, P GM
40 watts*
Average Gate Power Dissipation, P G(A v)
1.0 watt*
Peak Reverse Gate Voltage, V GRM _
10 volts*
Peak Forward Gate Current, I GF m6.4 amperes*
Reverse Recovery Energy
0.002 watt sec.
Storage Temperature, T stg
-65Cto+150C*
Operating Temperature, T c
-65Cto+120C*
Stud Torque
_30 Lb-in (35 Kg-Cm)

RMS Forward Current, On-State^

CHARACTERISTICS
TEST

PULSE CIRCUIT

COMMUTATED

SYMBOL
toff

MIN.

MAX.

TYP.

UNITS

TEST

CONDITIONS

See Charts 1 and 4. To = +115C, I rM

100 amps, Approx. Sinusoidal current

(pulse)

TURN-OFF TIME

waveform

C140 (2N3649-53)

C141 (2N3654-58)

15*

fisec

10*

Msec

(t,

No

1.0 ^sec, t p

2.05

:2

delay reactor, Pulse rep. rate

= 400 Hz. Vfxm
Rated, Vrxm g 200
volts, Vr X
30 volts. Rate of rise of reapplied forward blocking voltage (dv/dt)
200 volts//isec (linear ramp). Gate
supply: 20 volts open circuit, 20 ohms,
1.5 fisec square wave pulse, Rise time
/isec)

0.1 fisec

CONVENTIONAL
CIRCUIT

Utt

TURN-OFF TIME

=
=

C140 (2N3649-53)
C141 (2N3654-58)

+12CC, Irs.
10 amps (50 ^see
pulse), Rectangular current waveform,
Test repetition rate
60 Hz.
Vr sr Bated, Vrxm == Rated (see Chart
15 volts (see Chart 1). Rata
1), v*
of rise of Current
10 amps/psec. Rate
of fall of current
5 amps/Vsec. Rate
of rise of reapplied forward blocking
voltage (dv/dt)
200 volts//*sec (linear
ramp). Gate bias
volts, 100 ohms
(during turn-off time internal).
To

COMMUTATED

max.

'

15*
10*

784

<

usee
/usee

CHARACTERISTICS
TEST

DC REVERSE OR

FORWARD BLOCKING
CURRENT (1)
CHOP

SYMBOL

MAX.

C140A (2N3650)
C141A (2N3655)
C140B (2N3651)
C141B (2N3656)
C140C (2N3652)
C141C (2N3657)

C140D (2N3653)
C141D (2N3658)

C140,C141
TEST

UNITS

Tc

(2N3649)

CURRENT

TYP.

Iro Or
Ifo

C141F (2N3654)

DC REVERSE OR
FORWARD BLOCKING

MIN.

(Cont.)

=+

CONDITIONS

25C

1.0

6.0

mAdc

V BO = Vfo =

1.0

6.0

mAdc

Vro

= Vfo =

1.0

6.0

mAdc

Vro

- Vfo = 200V DC

1.0

5.5

mAdc

Vro

= Vfo = 300V DC

1.0

4.0

mAdc

Vro

= Vfo = 400V DC

DC
DC

100V

+120C

T>- -.

Tun or
Ifo

50V

(1)

C140F (2N3649)
C141F (2N3654)

C140A (2N3G50)
C141A (2N3655)

C140B (2N3051)
C141B (2N3656)

C140C (2N3652)
C141C (2N3657)

C140D (2X3653)
C141D (2N3C58)

GATE TRIGGER
CURRENT

Igt

5.0

6.0*

mAdc

^ V, - 50V DC

5.0

6.0*

mAdc

V,,.,

=-

5.0

6.0*

mAdc

Vk

- Vfo -

5.0

5.5*

mAdc

Vk..

= Vf.. = 300V DC

3.5

4.0*

mAdc

Vro

= Vfo = 400V DC

180

mAdc

80

500*

150

mAdc

Tc

TC
Rl

GATE TRIGGER
VOLTAGE

V..T

0.25*

PEAK ON-VOLTAGE

Vp

3.0

1.5

4.5*

2.0

1.8

2.05*

Vdc

Vdc

Vdc

RL =

Vfo

= 100 V DC
200V

+25C, Vfx
4

DC

= 6Vdc,

ohms

= -65C, VFx = 6Vdc,

= 2 ohms

Ri.

= +25C, Vfx =
= 4 ohms

T,-

To

Ri. --

-t 120O, Vfx
200 ohms

T,. ^.

-65-C, V,x

Ri.

2 ohms

(;

+25C,

Ifm

6 Vdc,

Rated,

- 6Vdc,
=

25A

1msec. pulse. Duty cycle

HOLDING CURRENT

= 24Vdc
forward curi'cnt

10ms wide,

75

150

mAdc

Tr

cuit,

150

350*

mAdc

-=

cuit,

RATE OF RISE OF
FORWARD BLOCKING
VOLTAGE THAT WILL
NOT TURN ON SCR

l</<.

Anode supply

I HO

Initial

EFFECTIVE THERMAL
RESISTANCE (DC)

=:

0J-C

0.85

dv/dt

200*

1.7*

pulse, 0.1ms to

3.0A

+25C. Gate supply: 10V open cir20 ohms, 45 usee min. pulse width.

65 C. Gate supply: 20V open cir20 ohms, 45 ^sec min. pulse width.

C/watt

volts/

T.-

fisec

Vfo

-.

120 C. Gate open circuited.

Rated

(1) Maximum case to ambient thermal resistance for which maximum Vfo, Vro ratings apply equals 5C/watt.
Indicates values included in Jedec Type Number Registration.

785

C140,C141

^L

.11.

j&

^SCR

2.

WAVEFORMS FOR

LINEAR cWdt

(TEST

PULSE TURN-OFF TIME BASIC TEST CIRCUIT

notes:

1.

1
1

WHEN ANODE CURRENT RATE

PULSE TURN-OFF TIME TEST

2)
3)

Of RISE

10

SHADED AREA SHOWS LOCUS OF PERMISSIBLE

GATE SOURCE LOAD LINES
MINIMUM PERMISSIBLE GATE DRIVE JOVOLTS
OPEN CIRCUIT.ZO OHMS. LOWER GATE DRIVE

I.SuSEC. MAXIMUM GATE PULSE RISE TIME-

"

0.1/J.SEC.

5)

S)

A
2
s
s \A
^R

7)

CASE TEMPERATURE- +23*C T0+I20*C.

CURVES SHOW MAXIMUM ALLOWABLE PEAK

GATE POWER DISSIPATION VS. PULSE WIDTH
MAXIMUM ALLOWABLE AVERAGE GATE POWER

-.

'

\
-\

^
Vc *<>

~fe^
r
400

3.

1000

4000

10,000

$
*

%*

40,000

_io^
'
_J

BASE WIDTH -MICROSECONDS

PULSE

"o\^

'%

/^
*>

7 'z

ENERGY PER PULSE FOR SINUSOIDAL PULSES

This chart provides a rapid

means

"ANEOUS GATE CURRENT

determining anode dissipation

with half-sine-wave pulses. Multiof

ply the

4.

energy per pulse by the

rate to obtain average

GATE TRIGGER REQUIREMENTS FOR HIGH FREQUENCY

AND HIGH di/dt OPERATION

repetition

OUTLINE DRAWING

anode diuipation.

(COMPLIES WITH JEDEC TO-48)

NOTES:
Complete threads
1

to

extend to

(COMPLIES WITH JEDEC TO-48)

within 2V% threads of seating

plane. Diameter of unthreaded
portion .249" (6.32MM) Maxi-

SYMBOL
A

INCHES
MIN. MAX.

3.

Angular

orientation of these
terminals is undefined.
V4-28 UNF-2A. Maximum pitch
diameter of plated threads shall
be basic pitch diameter .2268"

SEE NOTES

(5.76MM), minimum pitch diameter .2225" (5.66MM), reference:

screw thread standards for FedService 1957, Handbook
H28, 1957, PI.
A chamfer (or undercut) on one
or both ends of hexagonal por-

-L-

eral

4.

tions

optional.
is anode connection.

is

5.

Case

6.

Large terminal

7.

Small terminal

is

cathode con-

is

gate connec-

NYJ
0T

12.83

NOTES

.505

Ob

.115

.140

2.92

3.56

*1

.210

.300

5.33

7.62

dD

ML_ ^ f
s

MAX.

8.38

.330

mum, .220" (5.59MM) Minimum.

2.

MILLIMETERS

MIN.

13.82

.544

.544

.562

13.82

14.27

.113

.200

2.87

5.08

1.52

.060

F
,

36.36

.1*3

22.23

.875

J
l

3.05

.120

OM

.422

.453

ot

.060

.075

ot,

.125

.165

3.18

10.72

11.51

nection.

SEE NOTES

tion.

Insulating kit available upon request.

A. Vi-28 steel nut, Ni. plated, .178
8.

B.

min. thk.
tooth

Ext.

steel

lockwasher,

Ni. plated, .023 min. thk.

786

a 7

.52

.91

4.19
3

'

WAVE DATA

SINE
800
1>UU

C140.C141
-

^l\
J

^ase--^^~~f-C

400

p8&,

3
*

6-

CI40

19m

CI4

IOp

FIG

MAX RISE TIME

O.I>js

5000

MOV MAX 1 (jtp

'

***

REQUIRED GATE DRIVE

20 VOLTS OPEN CIRCUIT
20 OHMS SOURCE
1.5 pi MIN PULSE WIDTH

7.

ft

200

2000

UUCIMUM CIRCUIT dv/dt 200v/p

ATED FORWARD BLOCKING VOLTAGE
REVERSE BLOCKING VOLTAGE

4.

0o

MINIMUM CIRCUIT TURN-OFF TIME

3.

sJ

30

^c
V

80

1005

V.

zS15

40

BO

400

200

IOO

600 800 WOO

PULSE BASE WIDTH -MICROSECONDS

MAXIMUM ALLOWABLE PEAK FORWARD CURRENT

5.

800
BOO

^\
/ \

vs PULSE

WIDTH

__

'

^\

0TC

CI40

-toT~*~

5.

*o 3

6.

a.

7.

60

200p

"^

80

50 06

n.

v
^

a.

40
_I0C

20

ISpt

Vs

N.

30V

REQUIRED GATE DRIVE

20 VOLTS OPEN CIRCUIT

s:

20 0HMS SOURCE
1.5 u* MIN PULSE WIDTH

0.\p*

SV

MAX

RISE TIME

x
s

^\

00

RATED FORWARD BLOCKING VOLTAGE

REVERSE BLOCKING VOLTAGE
V RXM - 200V MAX.)
SEE FIG.

v"

^-

is
'Oa

"-

r8*A

^^-^

IUU

MINIMUM CIRCUIT TURN-OFF TIME

3.

LU

g
%
O

65C)
1

=aa

400

i
3

'so

(T c

zoo<

15

&
SO
PULSE

400

200

100

BASE WIDTH

MAXIMUM ALLOWABLE PEAK FORWARD CURRENT

6.

600 BOO 1000

MICROSECONDS

vs PULSE

WIDTH

(T c

90C)

NOTES
2.

3.

FOR SINUSOIDAL ANODE CURRENT

WWEFORM ONLY
MINIMUM CIRCUIT TURN-OFF TIME
CI40

I5j
lOy*

CI4I

MAXIMUM CIRCUIT dv/dt -200v/jj,

RATED FORWARD BLOCKING VOLTAGE .
6. REVERSE BLOCKING VOLTAGE
V M1( .200VMAX.l
SEE FIG. I_
V RX - 30V
J
7 REQUIRED GATE DRIVE
20 VOLTS OPEN CIRCUIT
20 OHMS SOURCE
4.

5.

80

60

40

FU

LSES PER s
Co*p

:o

^
N
^S

200
.

s
!^

MIN PULSE WIDTH

MAX RISE TIME

>
\
sv

500

l.5>i*

O.lpt

^^-^io<30
?oo
2mo

15

Si

6810

20

40

60

SO IOO

ZOO

40O

600 600

1000

ZOOO

PULSE BASE WIOTH - MICROSECONOS

7.

Charts

5,

6 and

7, for three

fied turn-off time

and dv/dt

MAXIMUM ALLOWABLE PEAK FORWARD CURRENT

WIDTH

(T c

115C)

maximum value of peak forward current at which the speciapply. The specified gate drive requirements must be adhered to.

case temperatures 65C, 90C, and 115C, give the

still

vs PULSE

787

LOW

C140,C141

(3)
(4)

DATA

NOTES

REPETITION RATE

RECTANGULAR CURRENT PULSES 50

MICROSECOND MINIMUM DURATION
,

RATE OF RISE AND FALL OF CURRENT LESS THAN

FREQUENCY 50 TO 400 Hz
__

AMPERES PERjuaec

ib

C 140-""

This

chart

gives

the

chart

is

necessary for rectangular anode cur-

rent pulses of the specified pulse

i^

maximum

of the forward current. The use of this

tion

ST LIMITS

guaranteed

C140 and C141 as a func-

turn-off time of the

width and

frequency.
(5)

MAXIMU M dv/d = 200 VOLTS PER jjmc

SEE CH ARACTER STIC TABLE FOR OTHER
TEST

ONDITIO S

Specification Sheets

PEAK FORWARD

8.

CURRENT -AMPERES

MAXIMUM CONVENTIONAL CIRCUIT-COMMUTATED TURN-OFF

TIME vs PEAK FORWARD CURRENT, ON-STATE

do not use this curve when

anode Current rate of rise
* 10 amperes per microsecond.
see chart 10

rectangular gate voltage pulses

applied with pulse rise time
equal to 10% of pulse wioth.

2)

140.12
140.22
140.23
140.47
140.48
145.55
160.35
160.39
170.35
170.36
170.37
170.38
170.42
170.44
170.45
170.53
170.57
170.76
170.80

1N3879 Series (6 amp) Fast Recovery Diode

1N3889 Series (12 amp) Fast Recovery Diode
A28 Series (12 amp) Very Fast Recovery Diode
1N3899 Series (20 amp) Fast Recovery Diode
1N3909 Series (30 amp) Fast Recovery Diode
A96 Series (250 amp) Fast Recovery Diode
C140 Series (35A) 50-400V High Speed SCR
C144 Series (35A) 500-800V High Speed SCR
C154-7 Series (110 amp) High Speed SCR
C158, 9 Series (110 amp) High Speed SCR
C385 Series (250 amp) High Speed SCR
C358 Series (225A) High Speed SCR
C395 Series (550A) up to 600V, High Speed SCR
C388, C387 Series (550A) High Speed SCR
C398, C397 Series (700A) High Speed SCR
C185 Series (235 amp) High Speed SCR
C354, 5 Series (115 amp) High Speed SCR
C506 Series (625 amp) High Speed SCR
C510 Series (625 amp) High Speed SCR

200.38
200.41

"Application of Fast Recovery Rectifiers"

"Simple Circuits For Triggering SCR's Into
Fast-Rising Load Currents"
"Commutation Behavior of Diffused High Current Rectifier Diodes"
"A Low Cost Ultrasonic Frequency Inverter
Using A Single SCR"

SHADED AREA REPRESENTS LOCUS

OF POSSIBLE TRIGGERING POINTS
FOR VARIOUS GATE PULSE WIDTHS

Application Notes

AND TEMPERATURES

200.42
200.49

Technical Paper Reprints

660.13

660.14
660.15

"The Rating and Application of SCR's Designed for Switching at High Frequencies"
"Basic Magnetic Functions in Converters and
Inverters Including New Soft Commutations"
"SCR Inverter Commutated By An Auxiliary
Impulse"

660.16

"An SCR
Sine

Inverter

Wave Output"

With Good Regulation and

INSTANTANEOUS GATE CURRENT

Seminar Notes
9.

PULSE GATE TRIGGER CHARACTERISTICS

671.4

"The Widening World of The Fast Recovery

Rectifier Diode"

1000

671.15

800
-3^

"The Amplifying Gate SCR"

*For copies of any published information, please order by decimal publication number from: General Electric Company, Distribution Services, 1
River Road, Schenectady, N. Y. 12305.

//
/\
.*"/

In

no circumstances

rent

C3/Sl

TANEOUS VALUE
ANODE CURRENT MUST
NEVER EXCEED TURN- ON

3
4.

60 Hi
CASE TEMPERATURE'+23*C TOIJO'C
SWITCHING FROM RATED BLOCKING
VOLTAGE
REQUIRED GATE TRIGGER PULSE
lo)20 VOLT OPEN CIRCUIT {CURVE A)
5 VOLT OPEN CIBCU1T \ CURVE B )
20 C )
I Tc . +
10 VOLT OPEN CIRCUITICURVE SI

+ZS'C
20 OHM SOURCE
<

lb)

Tc

SE RISE

Tl

UE

0.

ft S

10.

FROM START OF CURREF

FLOW- MICROSECONDS

TURN-ON CURRENT

in

LIMIT

788

anode
If

cur-

curve,

this
it

does,
are

lines

given; one for required gate drive in high

di/dt applications and the other for gate drive

SCR

on. The user must

capable of producing high di/dt anode current, no gate pulses
of insufficient magnitude (due to noise for
example) triggers, and thus possibly damages,

that will just turn the

take care that,

the SCR.

60 80
:

the SCR

cross the turn-on current limit line.

the SCR may be destroyed. Two

NOT

may

waveform, when plotted

in

circuit

LOW
NOTES

REPETITION RATE

DATA

This chart gives the instantaneous

APPROXIMATE AVERAGE
POWER DISSIPATION TO DETERMINE HEATSINK REQUIREMENTS
MAX ALLOWABLE CASE TO AMBIENT THERMAL
RESISTANCE = 5C PER WATT WITH RATED

USE FOR CALCULATING

(1)

(2)

BLOCKING

10

'

VOLTAGE

C140,C141

power

dissi-

pated within the SCR as a function of time

from start of current flow and the instantaneous value of forward anode current. Used as
follows, this chart yields average dissipation

APPLIED.

KW

information

any

for

anode

current

wave-

r-,0^ s

400

shapes:
9KW

>

'

1.

V.

V
/ V.
s, /

400W

2.

this

200 W

'X

On

linear

paper,

repfot

instantaneous

forward power dissipation versus time.

The area under the curve gives watt seconds of energy dissipated per anode

'

current pulse.
60 W
3.

._

anode current waveform on

Plot the
chart.

KW

40

Multiply

the

rate to give

energy by the repetition

average power dissipation.

20 W
1

40

10

4.0

1.0

TIME FROM START

11.

400

100

4000

1000

10,000

OF CURRENT FL0W->JSeC

INSTANTANEOUS FORWARD POWER DISSIPATION

NOTES

"

11)

12)

(3)

14)

(5)

16)

"

FREQUENCY 50 TO 400 Hi
USE THIS CURVE ONLY WHEN ANODE CURRENT RATE

CURVES DERIVED FQR MAXIMUM GATE AND FORWARD

BLOCKING POWER DISSIPATION.
MAXIMUM ALLOWABLE CASE TO AMBIENT THERMAL
MAXIMUM CIRCUIT dv/dt=2 30 VOLTS PER >isc
SEE CURVE 8 FOR APPLICABL E TURN-OFF TIME LIMIT

This chart

is

used

when

the

SCR

is

carrying

rectangular current with no significant turn-on

^*.

switching duty at a repetition rate between

ii*

50 and 400 pulses per second.

PEAK FORWARD CURRENT

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE FOR

RECTANGULAR CURRENT WAVEFORM

12.

"
1

tlOTES:
(1)

(2)

(3)

(4)

CASE TEMPERATURE + 25C TO +I20'C

RATED AVERAGE GATE DISSIPATION AND
BLOCKING POWER DISSIPATION INCLUDED
USE THIS CURVE ONLY WHEN ANODE CURRENT
RATE OF RISE IS LESS THAN 10 AMPS
PER >iec

FREQUENCY - 50 TO 400 Hz

1/2=50%

This chart provides

1=100%

1/3 =

33.3%
1/

di/dt.

4=25%
1/6=

1/ 12

&

is

applicable only between 50 Hz

Hz.

16.

/
//.

It

and 400

a rapid means of deter-

mining SCR dissipation with low values of

DUTY CYCLE

8 3

I
PEAK FORWARD CURRENT - AMPERES

T3.

AVERAGE POWER DISSIPATION FOR RECTANGULAR CURRENT WAVEFORM

789

HOW

C140,C141
EXAMPLE

TO USE THIS SPECIFICATION SHEET

from

tract

(High Frequency Sinusoidal Puke)

I.

this case temperature a temperature of 1.7

16 watts
27C to give the maximum permitted
case temperature, with the given waveform, of 90C
27C
63C. As the end of the current pulse is rectangular, Chart 8 will have to be used to find the required turn-off
time which is 16,useconds. The concurrent dv/dt is 200
volts/^second.

C/watt

Problem:

Find the maximum allowable average anode current that

can be carried by a C141 if the pulse is 50 ^seconds wide
and the repetition rate is 5000 Hz. The case is held at 80 C.
What is the dissipation in the SCR? Find the maximum
permUted thermal resistance between case and cooling air
at 45C. Assume the gate and blocking losses total 1 watt.

EXAMPLE

IV.

(Low Frequency, Irregular Pulses With High

Initial di/dt)

Answer:
Problem:

From Chart 5 (65C) the maximum permitted peak current at 5000 Hz, 50 /*sec pulse width is 72 amperes; Chart
6 (90C), 45 amperes; Chart 7 (115C), 10 amperes.
Interpolation gives the permitted peak current at 80 C as
55 amperes peak.

What is the maximum allowable case temperature for a

C141 carrying the following anode current waveform?

P"'se Width
Pulse Period
50
= 55
= 8.8 amps average
200
From Chart 3 at 50 /^seconds pulse width and 55 amperes
peak current the energy dissipated per pulse is 0.004 wattseconds per pulse. The average anode dissipation is 0.004 x
5000 = 20 watts.
From this information the heatsink can be chosen using
the equation:
Maximum case to cooling fluid thermal resistance
_ Case Temperature Cooling Fluid Temp.

Anode Dissipation + Gate & Blocking Losses

The average current

U X -2- X
tr

80-45
= 20+1 =

-8.3ms

Answer:

Check the

initial di/dt by plotting the first 10 ^seconds of

current flow on Chart 10. The waveform is found to be
within safe limits provided that the high gate pulse shown
on Chart 4 is used. Note that an inadequate gate pulse could
destroy the SCR. To find the anode dissipation, plot the
anode current waveform on Chart 11.

C/watt.

Note that a turn-off of 10 ^seconds and a dv/dt of 200

volts/^second can be applied concurrently to the C141 at
the above current and temperature conditions.

EXAMPLE

<&~~

6KW

"

Tkw
ZKW

(Low Frequency, Low di/dt Pulse)

II

>

%
^

Problem:

C140 is carrying a 20 amp rectangular pulse, 833 ^seconds wide at a repetition rate of 400 pulses per second. The

amps per ^second. What is the maximum

allowable case temperature? What is the power dissipation?
What turn-off time and dv/dt may be applied to the C140?
initial di/dt is 5

^^^v.

IX*

>-Excr

MOW
400*
1

^Eim

yX-

lOOW

SOW

*-

40W
zow

Answer:

An

833 /usecond pulse in a 2.5

2500

100

ms period

30%. Chart 12 shows that with

this

duty

rectangular pulse has a maximum allowable

case temperature of 98C. Chart 13 gives the total dissipation as 13.5 watts.
From Chart 8, 20 amps forward current permits a turn-off
time of 16 ^seconds and a dv/dt of 200 volts/^second to be
applied concurrently.

EXAMPLE

III.

4O0

K>0

OOO

4000

O(900

Replot the intersections of anode current with the instantaneous power lines. In this case it is convenient to replot
the first 40 ^seconds of current flow separately in order
to use a convenient scale.

amp

cycle a 20

40

4.0

gives a duty cycle of

'

(High Frequency, Irregular Pulses)

Problem:

What

is the maximum allowable case temperature for a

C141 carrying the following anode current waveform:
What turn-off time and dv/dt may be applied?

50A
SINUSOIDAL
1

MfMM

m mmmi 'tux

By graphical integration, the energy per pulse for the first

40 ^seconds is seen to be 0.12 watt-second. To this must be
added the energy dissipated during the rectangular portion
of the pulse which is 40 watts X 8.3 ms
0.33 watt-seconds.
Thus the total energy dissipated per pulse is 0.12
0.33
0.45 watt-seconds. The average dissipation due to anode
current flow is 0.45 watt-seconds x 60 pulses per second
27 watts.

I00>is -

200^8

No

rigorous method has yet been developed for handling

this case. The following method is approximate only but
provides a conservative answer.
The di/dt of the initial pulse imposes the most severe strain
on the SCR during the cycle. Use the initial half cycle to
establish a case temperature and then lower the case temperature by an amount
effective thermal resistance
(DC) of the SCR X wattage dissipated during the rest of
the cycle (ti to t.) to establish the maximum permitted
case temperature.
The average anode dissipation (time ti to fa) can be found
by means of Chart 11 (for method see Example IV). The
energy dissipated per pulse is 0.0032 watt-seconds. The
average anode dissipation
0.0032 watt-seconds x 5000
pulses per second
16 watts.

As the repetition rate is within the limits of 50

a convenient way of ascertaining the maximum
case temperature is to convert the high di/dt
waveform to a low di/dt rectangular pulse with

=
=

to 400 Hz
permitted

irregular
the same

dissipation.

From Chart 13, a 27 watt, 50% duty cycle pulse gives an

average anode current of 25 amperes peak.
From Chart 12, a 25 ampere, 50% duty cycle current gives
a maximum allowable case temperature of 75C.
Note: For repetition rates lower than 50 Hz, the temperature excursion within the SCR each cycle becomes too high
for the use of Charts 12 and 13. The procedure for dealing
with these very-low-frequency pulses is discussed in the
General Electric SCR Manual, 3rd Edition, Chapter 3.

Chart 6 shows that

"a 5000 Hertz, 50 ampere, 20 ^second

pulse requires a case temperature of less than 90 C. Sub-

790

C144

SCR

Electric CI 44 Silicon Controlled Rectifier is a reverse blocking triode thyristor

semiconductor device designed primarily for high-frequency power switching applications which
requires blocking voltages from 500 to 800 volts and load currents up to 35 amperes RMS, at

The General

frequencies up to 10 kHz. The CI 44

is

characterized for rectangular and sine wave operation.

utilizes a new voltage rating system which allows high voltage blocking capability
approaching the short turn-off time characteristics of a low blocking voltage SCR.

The CI 44
while

Equipment designers can use the C144 SCR in demanding applications such as: choppers,
inverters, regulated power supplies, cycloconverters, ultrasonic generators, high frequency
lighting, induction heaters, radar and sonar transmitters, laser pulsers, pulse modulators.

MAXIMUM ALLOWABLE RATINGS

Non-Rep. Peak
Off-State and

Peak or

Repetitive Peak OffState Voltage,

(2)(3),T c

V DRM

=-65Cto

DC

Switching Voltage

V DM

or

VD

(2X3)

Repetitive Peak

Reverse Voltage

Reverse Voltage

V DSM and V RSM

(2X4)T C --65"C

T =
Cto-H25C

Vrr M

(2)(3)

(J

+125 GC

Type(l)

+12SC

Tc =-6S Cto+125C

C144E15E, C144E30E

500 Volts

500 Volts

500 Volts

600 Volts

C144M15M, C144M30M

600

600

600

720

C144S15M, C144S30M

700

600

700

840

C144N15M, C144N30M

800

600

800

1000

RMS

On-State Current,

Critical Rate-of-Rise of

T RMS
(

35 Amperes

to

(all

conduction angles)

On-State Current, di/dt: (5)

Gate triggered operation:

Switching from 500 volts (500 volt types)
Switching from 600 volts (600, 700, 800 volt types)
Peak One Cycle Surge (non-rep) On-State Current, Itsm
Peak Rectangular Pulse Surge (non-rep) On-State Current (5.0 Msec,
I

-65

2 t (for fusing), for times

t r =50/isec) I

TSM

100 Amperes per microsecond

100 Amperes per microsecond
25 Amperes
225 Amperes

0.5 milliseconds

40 Watts

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, P G (av)
Peak Negative Gate Voltage, VEM
Storage Temperature, Tstg
Operating Temperature, 1,
Maximum Stud Torque

165 Ampere 2 seconds

for 100 Microseconds
1.0 Watts

10 Volts

-65C

to

65C

to

+150C
+125C
30 Lb-in (35 Kg-cm)

791

C144

CHARACTERISTICS
Test

Peak Reverse and OffState Current (2)(6)

Symbol

Min.

Max.

Units

5.5

mA

Tc

Irrm
or

Idrm

Test Conditions

= -65C to+125C
= V DRM = 500 Volts Peak

Vrrm

4.6

3.3
Critical

Rate of Rise

of Off-State Voltage
D.C. Gate

200

D.C. Gate

Volts/

dv/dt

Igt

A<sec

Trigger Current

150

v GT

3.0

Vtm

3.0

Gate Open
Waveform
,

Tc =
Tc =
Tc =

Volts

Voltage

Holding Current

V DRM

v DC

4.5

125C, Rated

Circuited, Exponential

"

T c = 25C, V D = 6Vdc, R L = 4 ohms

T c = -65C, V D = 6Vdc, R L = 2 ohms

0.25

Peak On-State

Tc =

"
"

mAdc

400

Trigger Voltage

"

600
700
800

3.9

V D = 6 Volts, R L = 4 ohms
V D = 6 Volts, R L = 2 ohms
125C, Rated V DRM R L = 500 ohms
25T, I TM = 100 A Peak, > 1, S2
25C,

-65C,

TC =

msec, wide pulse. Duty cycle ^ 2%.

mAdc

Ih

Anode Source Voltage = 24 Vdc. Peak

Initiating On-State Current = 3 A, 0.

125

10 msec pulse.

325

pulse

Open

Circuit,

Tc =

115C,

20 ohms, 100

/isec pulse.

TM = lOOAPeak. Approximately Sinusoidal Current Waveform.

(pulse)

Off Time

See Chart

II

for time references.

State Current Pulse

= 7.5

t-i)

CI 44- 15- Types

to

25C, Gate source =

10V, Open Circuit, 20 ohms, 100 jusec

T c = 65C, Gate source = 20V,

Pulse Circuit

Commutated Turn-

Tc =

15

/isec

Base

(t 3

/usee.

t-,)

Time

On-

to peak

(t 2

On-State Current Pulse

15. /isec (+1.5-0 usee).

Repetition Rate = 400 PPS.

PRV

(t 5 )

CI 44-30- Types

30

/xsec

500 Volts max. Reverse Voltage (t 6 )

30 Volts. Peak Off-State Voltage (t 8 ) =
Rated V DRM Peak Off-State Voltage
.

(t

equals:

types;

500 Volts

600 Volts

for

for 600,

500 Volt
700 and 800

Volt types. Rate of Rise of Re-applied

Ramp): (t 6
= 200 Volts per j^sec. Gate Trigger
Pulse = 20 Volts, 20 ohms. Gate Trigger
Pulse Width (90% points) = 1.5 /isec.
Off-State Voltage (Linear

to

t 8)

Gate Trigger Pulse Rise Time (10% to

90%) = 0. 1 jusec. Gate Bias during TurnOff Time interval =

792

Volts,

20 ohms.

C144

CHARACTERISTICS
Test

Symbol

Min.

Max.

Rfljc

1.0

Steady State

(Contd)

Test Conditions

Units

Junction to Case

'CI

Thermal Resistance

Watt

Conventional Circuit

125, I T m = 10A Peak Rectangular

Current Pulse, 50/^sec duration. DI/DT

Tc =

tq

Commutated Turn-

< 10

Off Time

Amps

tion Rate <

V RRM
CI 44- 15- Types

15

per microsecond.

5A

per

fzsec.

PRV

Commuta= Rated

Volts max. Reverse Voltage at

end of Turn-Off Time interval =15

Repetition Rate = 60 PPS. Rate of

/xsec

volts.

CI 44-30- Types

30

Rise of Re-applied Off-State Voltage

/isec

(dv/dt) = 200V/;usec. Off-State Voltage

= Rated V DRM Volts. Gate Bias during

Turn-Off Time interval = Volts, 100

ohms.

NOTES:
(1)

Type designations

are defined as follows, using

30

C144N30M

as

an example:

M
Rated Switching Voltage

Maximum Turn-Off Time (30=30 Msec;

15 = 15 /xsec)

.Rated Repetitive Peak Off-State and Reverse Voltage

(2)

Values apply for gate terminal open circuited. (Negative gate bias

(3)

Maximum
(DC

case to ambient thermal resistance for

5.0C degrees per watt for

voltage),

V DRM

(4)

Half sine wave voltage pulse, 10 millisecond max. duration.

(5)

di/dt rating

capability

is

established in accordance with

may be

JEDEC

The pulse repetition rate for this

(minimum). Required gate drive = 20 volts, open

width. Repetitive di/dt capability

(6)

permissible).

Suggested Standard No.

7,

Section 5.1.2.4 Off State (blocking) voltage

temporarily lost immediately after each current pulse for duration

repetition rate.

Maximum

is

which maximum voltage ratings apply equals 3.0C degrees per watt for V D
and V RR!V|. See paragraph, "Basis for Voltage Rating" for further information.

is

less

than the period of the applied pulse

400 H^. The duration of the JEDEC di/dt test condition is 5.0 seconds
circuit, 20 ohm source, 0.1 microsecond rise time, 1.5 microsecond pulse

test

is

incorporated into peak current rating charts included in this specification sheet.

case to ambient thermal resistance for which

maximum V DRM and V RR m

ratings apply equals 5.0 degrees

per

watt. See paragraph entitled "Basis of Voltage Ratings", for further information.

PRELIMINARY DATA
These ratings and characteristics are not necessarily definitive and are based only on the tests and findings

Inasmuch

as further

information

may be

Company reserves
Electronic Component

acquired, General Electric

data without notice. Please contact your local General Electric

made

to date.

the right to change these preliminary

Sales

Manager for the

latest status

of

data prior to ordering devices to the limits indicated by the data.

I
793

BASIS OF VOLTAGE RATINGS

For The C144 Thyristor

C144

The CI 44 Thyristor

is

characterized for both inverter service and phase controlled service. Voltage ratings are given

applicable to both types of service.

For inverter

service, the off-state

and reverse voltage

ratings are based

on the waveform shown below:

w
LlI

<

800
700
L.O 600
U_ > 500
COl,

_l

PERMISSIBLE SWITCHING

~\ VOLTAGE LEVELS

UJLlJ

COO
tr<
UJI>-l
LUO
cc

500
600
700

800

>

PERCENT OF
CYCLE (lOHz
TOIOKHz)

25

50

I00

ONE CYCLE OF
APPLIED VOLTAGE
This waveform requires the use of a device case to ambient thermal resistance of 3.0 deg
thermal stability under maximum rated voltage and temperature conditions.

per watt in order to assure

The waveforms of the actual application must stay within the envelope shown for each voltage type. If the actual waveforms do not stay within the envelopes shown for each voltage type then a heat sink with less than 3.0 deg C per watt
must be used. Consult factory for assistance in heat sink selection to assure thermal stability.
For phase controlled
deg
It

per watt

service, sinusoidal voltage

maximum

is

waveform

is

assumed.

required to assure thermal stability at

device case to ambient thermal resistance of 5.0

maximum

rated voltage and temperature conditions.

should be noted that the above thermal stability criteria apply even when no on-state conduction losses are present.

OUTLINE DRAWING
(COMPLIES WITH JEDEC TO-48)
NOTES:
1. Complete threads

to

extend to

within 2'/2 threads of seating

plane. Diameter of unthreaded
portion .249" (6.32MM) Maxi-

SYMBOL
A

mum, .220" (5.59MM) Minimum.

Angular

orientation of these
terminals is undefined.
3. 14-28 UNF-2A. Maximum pitch
diameter of plated threads shall
be basic pitch diameter .2268"
2.

SEE NOTES
3,4

55

Ob

.115

.140

2.92

3.56

.210

.300

5.33

7.62

.544

.562

13.82

14.27

.113

.200

2.87

5.08

is

7.

Small terminal

is

cathode congate connec-

tion.
8. Insulating
8

kit

available upon

30.30

.193

22.23

.875
,

nection.
is

1.52

.060

optional.
anode connection.

is

Large terminal

13.82

.544

Case

NOTES

*,

chamfer (or undercut) on one

or both ends of hexagonal portions

12.83

H28, 1957, PI.

5.

MAX.

8.38

.505

6.

MILLIMETERS

MIN.

.330

OD

(5.76MM), minimum pitch diameter .2225" (5.66MM), reference:

screw thread standards for Federal Service 1957, Handbook
4.

INCHES
MIN. MAX.

re-

794

3.05

OM
N

.422

ot

.060

.075

1.52

Of,

.125

.165

3.18

quest.

A. V4-28 steelnut, Ni. plated, .178

min. thk.
B. Ext.
tooth lockwasher,
steel
Ni. plated, .023 min. thk.

.120

.453

10.72

11 .51
1

.91

4.19
3

1000

)/

/[/

jr\S\
JUNCTION TEMP.

uuu

_i_

>On2 5

80

...

NOTE:
APPLIES FOR CURRENT
WAVEFORM WITH RISE TIME,
ZERO TO PEAK,2 lOO^SEC.

60
I25C//

jJ25C

20

I5

I0

MAXIMUM ON-STATE
CHARACTERISTICS
co

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE VS.

ON-STATE CURRENT FOR SINUSOIDAL CURRENT
WAVEFORM.

INSTANTANEOUS ON-STATE VOLTAGE- VOLTS

1.

30

25

AVERAGE ON-STATE CURRENT

IO0

NOTES:
JUNCTION TEMPERATURE = I25C.
2. FREQUENCY = 50 TO 400 Hz.
3. CURVES APPLY FOR ANODE CURRENT
RATE OF RISE = 10 AMPERES PER
MICROSECOND.
1.

80

co

60

*
o

10

20

15

25

AVERAGE ON-STATE CURRENT

30

AMPERES

MAXIMUM AVERAGE POWER DISSIPATION FOR

SINUSOIDAL CURRENT WAVEFORM
NOTES:
APPLIES FOR ANODE CURRENT RATE OF RISE OF
10 AMPS PER MICROSECOND.
MAXIMUM CIRCUIT dv/dt = 200 VOLTS PER ^SEC.
SEE CHART 10 FOR APPLICABLE TURN-OFF TIME LIMIT.
RATINGS DERIVED FOR IjO WATT AVERAGE GATE

POWER

DISSIPATION.

CASE TO AMBIENT THERMAL RESISTANCE. REQUIREMENTS FOR THERMAL STABILITY MUST BE MET. SEE
PARAGRAPH ENTITLED "BASIS OF VOLTAGE RATINGS."
This chart

is

used

when

the SCR is carrying rectangular current with

80

no

significant

switching

turn-on

duty.

I
io

4.

20

30

70
90
60
80
50
40
PEAK ON-STATE CURRENT -AMPERES

IO0

HO

I20

MAXIMUM ALLOWABLE CASE TEMPERATURE VS. ONSTATE CURRENT FOR RECTANGULAR WAVEFORM
795

'

C144

NOTES:
JUNCTION TEMPERATURE = I25C.
2.APPLIES FOR ANODE CURRENT RATE OF RISE

r
!

I.

I
3.

RATED AVERAGE GATE POWER DISSIPATION AND

BLOCKING LOSSES INCLUDED.

s 60

DUTY CYCLE

'

"

00
<

o7

This
rapid

provides

means of

deter-

mining SCR dissipation

with low values of di/dt.

-^&S

3 30

chart

,\0>

\n

40
70
50
60
80
90
PEAK ON-STATE CURRENT - AMPERES

30

MAXIMUM AVERAGE POWER DISSIPATION FOR

RECTANGULAR CURRENT WAVEFORM

5.

This chart gives the guaranteed maximum turnoff time of the C144 as
a function of the for-

ward current. The use

of this chart

is

neces-

sary for rectangular an-

notes:

rectangular current pulses, 50

microsecond minimum duration.
2. see characteristic table for
other test conditions.

i.

ode current pulses of

the specified pulse width
and frequency.

o
13-

10

6.

70
80
90
30
40
50
60
PEAK ON-STATE CURRENT -AMPERES

20

I00

IIO

MAXIMUM CONVENTIONAL CIRCUIT-COMMUTATED

TURN-OFF TIME

VS.

PEAK ON-STATE CURRENT.

This chart provides a

rapid means of deter-

mining anode dissipation with half-sine-wave

pulses. Multiply the en-

ergy per pulse by the

repetition rate to obtain average anode dissipation.

P
10

20

40
I00 200 400
I000 2000 4000
PULSE BASE WIDTH - MICROSECONDS

10,000

40,000 100,000

ENERGY PER PULSE FOR SINUSOIDAL PULSES

796

WAVE DATA

SINE

NOTES:

r\

r\

3.

CI44__I5_
CI44 30

5.

15/iSEC

30^SEC

6.

VR

UJ

30 VOLTS

800

600

MAXIMUM CIRCUIT dv/dl - 200V/^SEC

RATED V DRM RATED SWITCHING VOLTAGE
REVERSE VOLTAGE
V RM * 500 VOLTS

4.

CI 44

MAXIMUM CASE TEMPERATURE = 65"C

FOR SINUSOIDAL CURRENT WAVEFORM ONLY
MINIMUM CIRCUIT TURN-OFF TIME

1.

2.

a.

^_
1

-iPp,

<&

r^

100

(n
"*"
-

lfci

PULSE BASE WIDTH

400C

2000
1000
MICROSECONDS

400

2 DO

100

10

sSto

-<%

^n

60

--

10,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

8.

T c =9C C

"

NOTESMAXIMUM CASE TEMPER ATUR E = 90C

FOR SINUSOIDAL CURRENT WAVEFORM ONLY
MINIMUM CIRCUIT TURN'OFF TIME

2.
3.

r\

CI44_I5_ =I5/*SEC
CI44_30_ = 30^SEC
4.
5.

MAXIMUM CIRCUIT dv/ dt * 200 V/> SEC

RATED V DftM RATED SWITCHING VOLTAGE
REVERSE VOLTAGE
,

V BM

VR
7

REQUIRED GATE DRIVE

20V0LTS OPEN CIRCUIT, 200HM SOURCE
I-5/lSECMIN. PULSE WIDTH
I^SEC MAX. RISE TIME

Jo

K<

&5
100

\fo

On

"^fe-

tyt

'

60

500 VOLTS
30 VOLTS

3"

rs.

10

'0

2C 00
000
4 00
2 00
PULSE BASE WIDTH-MICROSECONDS

100

10

4C oc

3,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)
TC

II5-C

NOTES:

f\

1.

MAXIMUM CASE TEMPERATURE

I15*C

2.F0R SINUSOIDAL CURRENT WAVEFORM ONLY

3 MINIMUM CIRCUIT TURN-OFF TIME

CI44_I5_ = IBfiSEC
C144_30_ 30M SEC
MAXIMUM CIRCUIT dv/dl = 200V/^SEC
RATED V DRM RATED SWITCHING VOLTAGE
6-REVERSE VOLTAGE
V RM ' 500 VOLTS

4.

5.

= 30 VOLTS
REQUIRED GATE DRIVE
20 VOLTS OPEN CIRCUIT, 20 OHM SOURCE
I.5/.SEC MIN. PULSE WIDTH

VR

7.

60

O.I..SEC

MAX, RISE TIME

J 400

O
5

IOO

BO

--.

1^ " s ^s
ftL^
'.
\X

>,

r-\

Charts

8,

::

"F

;0*0

-pS

10.

Hi

""^ ^

60
~-

'" 1^'"..

s,

K\

:^

>

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 115C)

9 and 10 give the

maximum

value of peak on-state current at which the specified turn-off-time and dv/dt

797

still

apply.

C144

-V r
SWITCHING

VOLTAGE

*0

11.

*2

%*?

13*4*5

*8

WAVEFORMS FOR PULSE CIRCUIT-COMMUTATED

TURN-OFF TIME TEST.
Application Notes

Specification Sheets

140.12
140.22
140.23
140.47
140.48
145.55
160.35
160.39
170.35
170.36
170.37
170.38
170.42
170.44
170.45
170.53
170.57
170.76
170.80

1N3879 Series (6 amp) Fast Recovery Diode

1N3889 Series (12 amp) Fast Recovery Diode
A28 Series (12 amp) Very Fast Recovery Diode
1N3899 Series (20 amp) Fast Recovery Diode
1N3909 Series (30 amp) Fast Recovery Diode
A96 Series (250 amp) Fast Recovery Diode
C140 Series (35A) 50-400V High Speed SCR
C144 Series (35A) 500-800V High Speed SCR
C154-7 Series (110 amp) High Speed SCR
C158, 9 Series (110 amp) High Speed SCR
C385 Series (250 amp) High Speed SCR
C358 Series (225 A) High Speed SCR
C395 Series (550A) up to 600V, High Speed SCR
C388, C387 Series (550A) High Speed SCR
C398, C397 Series (700A) High Speed SCR
C185 Series (235 amp) High Speed SCR
C354, 5 Series (115 amp) High Speed SCR
C506 Series (625 amp) High Speed SCR
C510 Series (625 amp) High Speed SCR

200.38
200.41
200.42
200.49

"Application of Fast Recovery Rectifiers"

"Simple Circuits For Triggering SCR's Into
Fast-Rising Load Currents"
"Commutation Behavior of Diffused High Current Rectifier Diodes"
"A Low Cost Ultrasonic Frequency Inverter
Using A Single SCR"
Technical Paper Reprints

660.13
660.14
660.15

"The Rating and Application of SCR's Designed for Switching at High Frequencies"
"Basic Magnetic Functions in Converters and
Inverters Including New Soft Commutations"
"SCR Inverter Commutated By An Auxiliary
Impulse"

660.16

"An SCR Inverter With Good Regulation and

Sine Wave Output"

671.4

"The Widening World of The Fast Recovery

671.15

"The Amplifying Gate SCR"

Seminar Notes
Rectifier Diode"

any published information, please order by decimal publication number from : General Electric Company. Distribution Services, 1
River Road, Schenectady, N. Y. 12305.

'"For copies of

I
798

High Power

Silicon

C147

Controlled Rectifier
63A RMS

1200 Volts

The General

Electric CI 47 Silicon Controlled Rectifier is designed for phase

control applications. This is an all-diffused device which is considerably
smaller in size than comparably rated high power SCR's.

FEATURES:

High dv/dt With Selections Available

Excellent Surge and

Compact, Hermetic Package, 1/428 Stud

2
t

Ratings, Providing Easy Fusing

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM l

VOLTAGE. V RRM l

TYPE

Tj = -40Cto +125C

C
Tj = -40 C to +125C

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200

C147A
C147B
C147C
C147D
C147E
C147M
C147S

C147N
C147T
C147P
C147PA
C147PB
Half sinewave waveform, 10 msec.

maximum

Switching
Switching

2
I

600
720
840
960
1080
1200
1320
1440

of On-State Current (Non-Repetitive) di/dt:*

From 1200
From 600

(for fusing), for times

(for fusing), for times

150 Volts
300
400
500

63 Amperes (All Conduction Angles)

Depends on Conduction Angles (See Charts 2 and 3)

Volts
Volts

Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)

Peak One-Cycle Surge (Non-Repetitivel On-State Current, I TSM (50 Hz)
I

>
>

8.3 milliseconds

(See Figure 6)

1.5 milliseconds

(See Figure 6)

100 Amperes Per Microsecond

200 Amperes Per Microsecond
100 Amperes
910 Amperes
4150 (RMS Ampere) 2 Seconds
2
2850 (RMS Ampere) Seconds
10 Watts for 15 Microseconds

Peak Gate Power Dissipation, P G m

Average Gate Power Dissipation, Pq(av)
Storage Temperature, Tstg

2 Watts
-40C to +150C

-40C to +125C

Operating Temperature, Tj

Maximum

Tj = +125C

pulse width.

RMS On-State Current, I T ( RM s)

Average On-State Current, It(av)
Critical Rate-of-Rise

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM

30

Stud Torque

Lb.-In.

3-4

*di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
20 ohms gate trigger source with 0.5 /Usee short circuit trigger current rise time.

799

VqrM

N-m

stated above; 20 volts,

C147

CHARACTERISTICS
TEST
Peak Off-State and
Reverse Current

SYMBOL

MIN.

TYP.

MAX.

mA

Idrm

Tj = -40C to +125C

and

V DRM

Irrm

DC
DC

TEST CONDITIONS

UNITS

VrRM

CI 47 A

12

100 Volts Peak

C147B

12

200

C147C

12

300

C147D

10

400

C147E

10

500

C147M

10

600

C147S

10

700

C147N

800

C147T

900

C147P

1000

C147PA

6.5

1100

C147PB

150

300

3.5

0.25

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

Igt

V GT

V TM

1200

mAdc

T c = 25C,

VD

T c = -40 C,

V D = 12 Vdc,

= 12 Vdc,

T c = 25C, V D =
T c = -40C, V D =

Vdc

250

Ih

= 12

= 12

12 Vdc,

RL

= 12 Ohms

VDRM ,R L =

1000 Ohms

T c = +25 C, I TM = 500 Amperes

mAdc

Ohms

RL

T c = +125C, Rated
Volts

Ohms

R L = 12 Ohms

12 Vdc,

Millisecond Wide Pulse.

Holding Current

RL

Duty Cycle

Peak,

<

1%

T c = +25C, Anode Supply = 24 Vdc,

Gate Supply = 10V/20 Ohms. Initial Forward Pulse = 2 Amps., 0.1 Millisecond to
10 Milliseconds Wide.

Critical Rate-of-Rise of

dv/dt

200

T c = +125C, Rated VDRM

Using Linear
Exponential Rising Waveform. Gate Open

Volts/

Off-State Voltage. (Higher

values may cause device
switching)

//see

Circuited.

VDRM
7

Higher

Thermal Resistance
Turn-Off Time

R0jc
tq

minimum

dv/dt selection available

.35

125

consult factory.

C/Watt
isec

Junction-to-Case

Tj = +125C
I TM = 150 Amps. Peak
(3) V R = 50 Volts Min.
(1)
(2)

V DRM

(Reapplied)
Rate-of-Rise of Reapplied Off-State
Voltage = 20V//isec (Linear)
(6) Commutation di/dt = 5 A/jUsec
(7) Repetition Rate = 1 PPS.
(8) Gate Bias During Turn-Off Interval =
Volts, 100 Ohms
(4)
(5)

I
800

C147
_I50
o

I40
1.

UJ

RATING DERIVED IFOR 2.0 WATTS. AVERAGE GATE

POWER DISSIPATION

a.
2.

I30

RESISTIVE OR INDUCTIVE LOAD 50 TO 400 HZ.

uj

|l20

a.

UJ
t-

no CONDUCTIONS
u
(A
<
ANGLE

30

SO*" 90**! 120^

i8cr~"^

-J

DC

o
I 90
80

70

j 190*
H
-

CONDIK TION ANQLE

'0

50
30
40
2.0
INSTANTANEOUS ON- STATE VOLTAGE (VOLTS

10

1.

60

6.0

10

MAXIMUM ON-STATE CHARACTERISTICS

40
20
30
AVERAGE ON-STATE CURRENT

60

50

70

(AMPERES)

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

2.

-150
I.

RATING DERIVED IFOR 2.0 WATTS AVERAGE GATE

POWER

DISSIPATION.

|
|

140

MAXIMUM RATE OF RISE OF ON- STATE CURRENT=

20 AMP/ MICROSECOND di/dt.
3.50-400 HZ.2

j;l30
IT

10

20
AVERAGE ON

>90
I

50
(

60

AMPERES

70

10

20

AVERAGE ON

40
30
STATE CURRENT

50

60

(AMPERES

MAXIMUM ON-STATE POWER DISSIPATION FOR

SINUSOIDAL CURRENT WAVEFORM

WATTS AVERAGE
RATINGS DERIVED FOR 2
GATE POWER DISSIPATION]
I

80

27MAXIMUM-RATETOF RISEOF-ON=STATE CURRENT20 AMP/ MICROSECONDS

3. JUNCTION-TEMPERATURE^
50%
4. 50-400 HZ
I

70

>

30
40
STATE CURRENT

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

3.

60

5000

*
o"
UJ

2-

4000

a;

<

20

oe
!

io

M
l-l

"0

2000
10

40
30
20
AVERAGE ON -STATE CURRENT

50

60

(AMPERES)

PULSE WIDTH -MILLISECONDS

I 2 t RATING FOLLOWING RATED LOAD CONDITIONS

MAXIMUM ON-STATE POWER DISSIPATION FOR

RECTANGULAR CURRENT WAVEFORM

6.

801

MAXIMUM ALLOWABLE NON-REPETITIVE

SURGE CURRENT

C147
50
40

_^U

Mil

NOTEsl
INI
maximumIalloWable'
AVERAGE GATE DBSMT7T~ION = 2.0 WATTS.-p]
RECTANGULAR GATE
PULSES
'3. T-.lGATE current
POL^E WIDTH.
4. CASE TEMPERATURE
-40C TO + 125'C
|

i.

>

30

20

f\fc.

Vv^

"

wfc
sl

^
J>

POSSI BLE

/-40

f"

a ci

r 20V, 20/I

LOAD LINE

.6

1.0

10

TIME (SECONDS)

INSTANTANEOUS GATE CURRENT - AMPERES

7.

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

TRANSIENT THERMAL IMPEDANCE

8.

JUNCTION-TO-CASE

OUTLINE DRAWING

METRIC

METRIC
SYM.

TERMINAL

TERMINAL
2

CATHODE

CATE

TERMINAL
3

ANODE

MM

INCHES

SYM.

MAX.

MIN.

MAX.

.090

.115

2.29

2.91

.055

.066

1.40

1.67

.831

.901

21.11

22.88

.220

5.59

.676

.684

.597

MIN.

MAX.

MIN.

.422

.452

10.72

11.47

.120

.135

3.05

3.42

.534

.565

13.57

14.34

1.230

1.290

25

32.78

31.

MAX.

.029

.062

.74

1.56

.258

REF

6.55

REF

MIN.

THREAD SIZE
1/4-20 UNF-2A

COMPLETE THREADS TO WITHIN 2

THD. OF SEATING PLANE.
2. ONE STEEL, CAOMUIM PLATEDNUT
AND ONE STEEL.CADMUIM PLATED
I

<3>

1/2

LOCKWASHER SUPPLIED WITH EACH

DEVICE.

I
802

.138

REF

350

REF

.115

2.83

.240

.300

6.10

7.62

.169

.182

4.30

4.62

MM

INCHES

.012

.31

17.18

17.36

15.15

HIGH SPEED
Silicon

Controlled Rectifier
63A RMS

1200 VOLTS

The General

Electric CI 48 Silicon Controlled Rectifier is designed for power

switching at high frequencies. This is an all-diffused device which is considerable smaller in size than comparably rated high power SCR's.

FEATURES:
Fully characterized for operation inverter and chopper applications.

High dv/dt with selections

Excellent surge and

2
I

available.

ratings providing easy fusing.

Compact hermetic package,

V*

28 stud.

Equipment designers can use the C148

in

demanding applications, such

Choppers

Induction Heaters

Inverters

High Frequency Lighting

as:

Cycloconverters

DC

to

DC

conversion

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE. V DRM 1

VOLTAGE, V RRM

TYPES

Tj = -40C to +1 25C

Tj = +125C

600 Volts
700
800
900
1000
1100
1200

600 Volts
700
800
900
1000
1100
1200

720 Volts
840
960
1080
1200
1320
1440

C148S

C148N
C148T
C148P
C148PA
C148PB
Half sinewave waveform,

ms max.

2
t

(for fusing) for times

(for fusing) for times

2
I

>
>

1.5 milliseconds

8.3 milliseconds

Critical Rate-of-Rise

of On-State Current, Non-Repetitive

Critical Rate-of-Rise

of On-State Current, Repetitive

63 Amperes
700 Amperes
670 Amperes
1360 (RMS Ampere) 2 Seconds
2000 (RMS Ampere) 2 Seconds
100 A/jus f
75 A/jus t

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

2 Watts

-40C to +150C
-40C to +125C
30 Lb.-In.

Operating Temperature, Tj

Stud Torque

3.4

fdi/dt ratings established in

ohms

pulse width.

RMS On-State Current, I T (rms)

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
I

NON-REPETITIVE PEAK
REVERSE VOLTAGE. V RSM

Tj = -40C to +1 25 C C

C148M

accordance with

EIA-NEMA

Standard RS-397, Section 5.2.2.6 for conditions of max. rated VrjRM^ 20

gate trigger source with 0.5ms short circuit trigger current rise time.

803

N-m

volts,

20

C148

CHARACTERISTICS
SYMBOL

TEST
Repetitive Peak Reverse
and Off-State Current

MIN.

TYP.

MAX.

UNITS

12

mA

.35

C/Watt

Irrm

TEST CONDITIONS
Tj =-40C to +125C,
v = V DRM = V RRM

and

Idrm
Thermal Resistance

Rejc

Critical Rate-of-Rise of

dv/dt

200

V//jsec

Off-State Voltage (Higher

values may cause device
switching)

Junction-to-Case

Tj = +125C, Gate Open. VDRM = Rated

using Linear or Exponential Rising

Waveform.
Exponential dv/dt -

Vnou
DRM

(.632)

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

Igt

VGT

VTM

minimum

dv/dt selections available

150

300

Tc =

125

3.0

T c = +125C, V D =
Tc =
25C, V D =

3.5

Tc =

0.25

T c = +125C, Rated VDRM Rl =

1000 Ohms

Higher

DC

mAdc

Vdc

consult factory.

T c = +25C, V D =
-40 C,

6 Vdc,

RL

= 3 Ohms

V D = 6 Vdc,

RL
RL
RL
RL

6 Vdc,
6 Vdc,

-40C, V D = 6 Vdc,

4.0

Volts

jUsec

*q

Time
CI 48
CI 48

- 30
- 40

T c = +25C, I TM = 500 Amps

CI 48

38

40

= 3

Ohms

= 3

Ohms

Duty

48

(5)

40

1%

(Reapplied)
Rate-of-Rise of Reapplied Off-State
(linear).

(6)

Commutation

(7)

Repetition Rate =

(8)

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

(1)

(2)

<

V DRM

Voltage = 20 V//zsec

Peak,

cycle

(1) T c = +125C
(2) Ixm = 150 Amps.
(3) V R = 50 Volts Min.
(4)

30

C148 - 30

Ohms

millisecond wide pulse.

Conventional Circuit
Commutated Turn-Off

= 3 Ohms

(3)
(4)

di/dt
1

Amps/jusec

pps.

T c = +125C
I T m = 150 Amps

V R = 50 Volts Min.
V DRM (Reapplied)

(5) Rate-of-Rise of Reapplied Off-State

Voltage = 200 V/^sec

Commutation

(linear).

5 Amps/jusec.
Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =

(6)

di/dt

(7)

Volts, 100

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

CI 48

- 30

CI 48

tq

jUsec

(1)
(2)
(3)

40

55

(6)
(7)
(8)

(Consult factory for a specified

maximum

turn-off time.

I
804

T c = +125C
Ixm = 150 Amps

VR =
V DRM

volt

(Reapplied)
(5) Rate-of-Rise of Off-State Voltage =
(4)

45

Ohms.

200 V//zsec (linear).

Commutation di/dt = 5 Amps/jusec.
Repetition Rate = 1 pps.
Gate Bias During Turn-Off Interval =
Volts, 100 Ohms.

WAVE CURRENT RATING DATA

SINE

C148

800

s&

V6V

>>^
>S

Nbc o

^2

I00

UOf

I000

I00

PULSE BASE WIDTH

Maximum
vs.

(/is)

allowable peak on-state current

pulse width (T c = 65C)

*>
l> %

Tf^t-

to-

^N

'NjJ

NOTES:

(Pertaining to Sine

ft

1.

2.

^v

3.

ioo

4.
c

Oo

IOOO

IOO

PULSE BASE WIDTH

2.

and Rectangular Wave Current Ratings)

Switching voltage = 800 volts.

Maximum ckt. dv/dt = 200 volts/jusec.
Reverse voltage applied = Vr <[ 800 volts.
R-C Snubber ckt. = .25 nf. 20n.

i/xs)

Maximum

allowable peak on-state current

pulse width (T c = 90C)

vs.

800
I

^.

K
h

S&
/

$&,
p

""SO,
5?

<k *>

IOO

^
<
30

&
IOO

PULSE BASE WIDTH

3.

IOOOO

1000
(/is)

Energy per pulse for sinusoidal pulses

(Tj = 125C)

805

C148

RECTANGULAR WAVE CURRENT RATING

25% DUTY CYCLE

50% DUTY CYCLE

PULSES PER SECOND

50
500
[

PULSE S PER SEC DND

I000

50

500
1

J?5qc

00

r2500
_oooo

5000
I0000

I0000

io

IO
40
8
20
RATE OF RISE OF ON-STATE CURRENT

4.

Maximum

50

80

I00

20
40 50
8
IO
RATE OF RISE OF ON-STATE CURRENT (A/^sl

(A/jis)

allowable peak on-state current

di/dt (T c = 65C)

5.

vs.

Maximum

80

I00

80

I00

allowable peak on-state current

di/dt (T c = 65C)

vs.

300

300

PULSE!5 PER SECOND

50
|

PULSE 3 PER SEC DND

lOOo'

50"

I00

"I000

500

"

-250C
I

5000

IOOOCJ

I0000

IO

IO
8
20
40
RATE OF RISE OF ON-STATE CURRENT

6.

Maximum

50

80

"4

I00

40
8
IO
20
RATE OF RISE OF ON-STATE CURRENT

(A//is)

allowable peak on-state current

(T c = 90C)

7.

vs. di/dt

Maximum

allowable peak on-state current

(T c = 90C)

vs. di/dt

I
806

50
(A/^is)

C148

RECOVERED CHARGE DATA

100

TM =500A

300A
20DA
I00A

50A

>

50

20

REVERSE

di/dt

200

I00

(A/^s)

25C)

11. Typical recovered charge data (Tj

(Sinewave Current Waveform)

100

Itm

500A

400A
200A
I00A

50A

>

50

20

10

REVERSE

di/dt

200

ioo

(A/jiS)

12. Typical recovered charge data (Tj =

125C)

(Sinewave Current Waveform)

1000
"-

125 <'C

100

\Z5CJ

25C

12

INSTANTANEOUS ON-STATE VOLTAGE

13.

Maximum

5
-

VOLTS

On-State Characteristics

807

CI 48

ill

$>H

2>>J

^S

^p5&?
jiff

>.
,

S^
o

"-fe

"-^

i^>
\
100

1000

PULSE BASE WIDTH

8.

(jus)

Energy per pulse vs. peak current and

pulse width (di/dt = 100A//usec)
Tj = 125C
5 *=

ft-S^fc

^^o %&>
s

^\

Ps
xj:

<.
Ss
n

xL

^^

^K

\g*

s$

^^=-

nv<$>
>v s?4

^^-^

^0

9.

^x

Sgs

-4-.
PULSE BASE WIDTH

(jus)

Energy per pulse vs. peak current and

pulse width (di/dt = 25A//usec)
Tj = 125C
-V,

JS&>
jV-

\.

"^^^
,

^"S
V

;i

^c /
S9

^
>^J

*< o^

^
1000

100

PULSE BASE WIDTH

10.

(/js)

Energy per pulse vs. peak current and

pulse width (di/dt = 5A/ixsec)
Tj = 125C

808

CI 48
40

30

*
+

5*

-20V, 40f1

>

+3

/>Wx

Vvr

NOTES:

VS.

1.

Locus of possible
daries

/L

shown

DC

trigger points lies outside the

boun-

at the various case temperatures.

2.

Rectangular gate pulses.

3.

Tc

gate current pulse width.

-40 C

O
m

o
U">

son
LOADUNE

2ov,

(Si

ll
.1

.150
.125

.2

.3

.5

.7

2.0

1.0

INSTANTANEOUS GATE CURRENT

3.0

5.0

7.0

10

AMPERES

Gate Trigger Characteristics and Power Rating

14.

2000

<f>

I0OO

2000

Till

^Sgjo.

1000

700

_L

-500

PULSE BASE WIDTH

15.

5
(ms)

Sub-Cycle Surge (Non-Repetitive) On-State Current

And

2
l

Rating

I
.01

.1

16.

ll

TIME

SECONDS

Transient Thermal Impedance

Junction-To-Case

809

C148

OUTLINE DRAWING

METRIC

METRIC
SYM.

MIN.

TERMINAL

THREAD SIZE

CATHODE

CATE

NOTE.'

TERMINAL

ANODE

1/4-28 UNF-2A

COMPLETE THREADS TO WITHIN 2

THD. OF SEATING PLANE.
2. ONE STEEL, CADMU1M PLATED NUT
AND ONE STEEL.CADMUIM PLATED
I

1/2

LOCKWASHER SUPPLIED WITH EACH

DEVICE.

810

SYM.

MAX.

MIN.

MAX.

MM

INCHES
MIN.

MAX.

MIN.

MAX.

2.91

.422

.452

10.72

11.47

.090

.115

2.29

.120

.135

3.05

3.42

.055

.066

1.40

1.67

.534

.565

13.57

14.34

.831

.901

21.11

22.88

1.230

1.290

31.25

32.78

.012

.029

.062

.74

1.56

.258

REF

6.55

REF

TERMINAL

MM

INCHES

.138

REF.

3.50

REF

.115

2.83

.240

300

6.10

7.62

.169

.182

4.30

4.62

.220

5.59

.676

.684

17.18

17.36

.597

15.15

.31

HIGH SPEED
Silicon

C149

Controlled Rectifier

63A RMS

600 VOLTS

The General

Electric CI 49 Silicon Controlled Rectifier is designed for power

switching at high frequencies. This is an all-diffused device which is considerable smaller in size than comparably rated high power SCR's.

FEATURES:
Fully characterized for operation in inverter and chopper applications.

High dv/dt with selections

2

Excellent surge and

available.

ratings providing easy fusing.

Compact hermetic package, A 28

l

stud.

Equipment designers can use the C149

in

demanding applications, such

Choppers

Induction Heaters

Inverters

High Frequency Lighting

as:

Cycloconverters

DC

to

DC

Conversion

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM

VOLTAGE, Vrrm 1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM

Tj = -40C to +125C

Tj = 125C

TYPES

Tj = -40C to +125C

C149A10,
C149B10,
C149C10,
C149D10,
C149E10,
C149M10,
1

C149A20
C149B20
C149C20
C149D20
C149E20
C149M20

100 Volts
200
300
400
500
600

Half sinewave waveform, 10

ms max.

2
t

(for fusing) for times

(for fusing) for times

2
I

>
>

150 Volts

300

400
500
600
720

pulse width.

RMS On-State Current, Ij(rms)

Peak One Cycle Surge (Non-Repetitive) On-State Current,
Peak One Cycle Surge (Non-Repetitive) On-State Current,
I

100 Volts

200
300
400
500
600

TSM (60 Hz)

I TSM (50 Hz)
I

1.5 milliseconds

8.3 milliseconds

63 Amperes
1000 Amperes
920 Amperes
2
2850 (RMS Ampere) Seconds
4150 (RMS Ampere) 2 Seconds

Critical Rate-of-Rise

of On-State Current, Non-Repetitive

200

A/ais t

Critical Rate-of-Rise

of On-State Current, Repetitive

100

A/;us t

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

2 Watts
-40C to +150C

Operating Temperature, Tj

-40

C to +125 C
30

Stud Torque

Lb.-In.

3.4

fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5jus short circuit trigger current rise time.

811

Vqrm;

N-m
volts,

C149

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

UNITS

12

mA

Irrm

TEST CONDITIONS
Tj = -40C to +125C
= Vrrm
v= V

and

DRM

!drm
Thermal Resistance

Rfljc

Critical Rate-of-Rise of

dv/dt

200

.35

C/Watt
V//isec

Off-State Voltage (Higher

values may cause device
switching)

Junction-to-Case

Tj = +125C, Gate Open. VDRM = Rated,

using Linear or Exponential Rising

Waveform.
Exponential dv/dt Higher

DC

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

Igt

VGT

VTM

minimum

dv/dt selections available

150

300

Tc =

125

T c = +125C,

3.0

0.25

Vdc

T c = +25C, V D =

Tc =

-40C,

25C,

VD
VD
VD
VD

= 3

Ohms

Ohms

= 6 Vdc,

RL
RL
RL

= 3

Ohms

= 6 Vdc,

RL

Ohms

6 Vdc,

= 6 Vdc,

Volts

T c = +25C, I TM = 500 Amps.

tq

Msec

(3)
(4)

C149 - 10

10

15

20

C149 - 10

13

- 20

20

CI 49

CI 49

(1)

(2)

- 20

Peak,

Duty Cycle

millisecond wide pulse.

Conventional Circuit
Commutated Turn-Off
Time (with Reverse
Voltage)

= 6 Vdc, R L = 3 Ohms
T c = -40C,
T c = +125C, Rated VDRM ,R L = 1000 Ohms

3.5

3.0

(.632)

consult factory.

mAdc

Vdrm

<

1%.

T c = +125C
Ixm = 150 Amps.

V R = 50 Volts Min.
V DRM (Reapplied)

Rate-of-Rise of Reapplied Off-State

Voltage = 20 V/|/sec (linear).
(6) Commutation di/dt = 5 Amps///sec
(7) Repetition Rate = 1 pps
(8) Gate Bias During Turn-Off Interval =
Volts, 100 Ohms
(5)

(1)
(2)

(3)
(4)

T c = +125C
Ixm = 150 Amps.

V R = 50 Volts Min.
V DRM (Reapplied)

(5) Rate-of-Rise of Reapplied Off-State

Voltage = 200

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)
CI 49

CI 49

jusec

tq(dk>de)

(7)

Repetition Rate =

(8)

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

(1)

T c =+125C
I TM = 150 Amps

(3)
(4)

20

35

(5)

(6)
(7)
(8)

VR =
V DRM

maximum

tui n-off time

812

di/dt
1

5 Amps/jizsec

pps.

Volt
(Reapplied)
Rate-of-Rise of Reapplied Off-State
Voltage = 200 V/(sec (linear)
Commutation di/dt = 5 Amps/(sec
Repetition Rate = 1 pps
Gate Bias During Turn-Off Interval =
1

Volts, 100
fConsult factory for a specified

Commutation

(2)

- 10
- 20

V//Ltsec (linear).

(6)

Ohms

CI 49

WAVE CURRENT RATING DATA

SINE

800
700
600
500
400

^^.

300

U
200
4

<2go

^ g-

go

Sl

>

^3 iG0

<r

5
u

100

80
70

50

a.

^<S(0C

20

10

20

30

40 SO

300 400 500

200

800 1000

PULSE BASE WIDTH

Maximum

1.

/js

allowable peak on-state current

vs.

pulse width (T c

= 65C)

I000

800

NOTES:

00
800

(Pertaining to Sine

500

(A

W
>

t *oo
s

^sja

1.

2.

h^
jo

3.

^s>

at

U
w

too

TO

60

50

<

4.
)

5.

vgfo^

20

10

30

<

If the circuit di/dt remains below 30 amps/Ms, and normally

constructed snubbers using the components specified are employed, then the "soft" gate drive is sufficient. (20V, 40fi,
.5 Msec rise time.)

^&
20

and Rectangular Wave Current Ratings)

Switching voltage = 400 volts.

Maximum ckt. dv/dt = 200 volts/jusec.
Reverse voltage applied Vr
400 volts.
Required gate drive: 20 volts, 20 ohms, .1 Msec rise time
for 100 amps/jusec repetitive rating 20 volts, 40 ohms,
.5 Msec rise time for 30 amps/Msec repetitive rating.
R-C Snubber ckt. = .25 ni, 5 n.

40 50

200

80 IO0

900 400 500

5000

800 1000

10,000

If the circuit di/dt exceeds 40 amps/MS, then the stiff gate

source (20V 20fl) t r = .1 ms must be used. In addition the
total device di/dt must be checked to insure that it is not
above 100 amps/MS which is the long-term repetitive limit
for stiff gate source. (20V, 20n, 0.1 Msec rise time.)

PULSE BASE WIDTH-jus

2.

Maximum

allowable peak on-state current vs. pulse width (Tc

= 90C)

1000

rrr
TOO

500

^V
w

S N
foj.

300

s^

&
i 200

fe

<
z
*
c

^*

\^ ft
l0

e ao
J 70
60

50

40

N
SCL.

S
30
20

^^

10

200

300 400 500

600 1000

PULSE BASE WIDTH

3.

-jus

Energy per pulse for sinusoiaai pulses

813

M
RECTANGULAR CURRENT RATING DATA

C149

50% DUTY CYCLE

III

ioo
I

PULSES PER SECOND

50-2500
UJ
q:
uj

25% DUTY CYCLE

50-2500

PULSES PER SECOND

80

^^0

a.

2
1 70
H
Z

w 60

II

80

.ooo

70

40

< 60

40

30

20

10

80

50

100

RATE OF RISE ON-STATE CURRENT-A/^us

4.

Maximum

allowable peak on-state current

vs.

5.

di/dt(T c =650C)

100

PULS ES

50
80
to
UJ
K 70
60

10

20

30

40

RATE OF RISE ON-STATE CURRENT

50

30

100

-A//JS

Maximum

allowable peak on-state current

di/dt (T C

=65C)

vs.

150

P ER SECOI*ID

50-500 PULSES PER SECOND

1

500
1000

UJ

2500

50

a.

80

< 70
i

5000

40

100

or

uj

60

t-

z 50
UJ

5000

30

20

10,000

20

10,000
10

10

20

30

40

RATE OF RISE ON-STATE CURRENT6.

Maximum

50

80

10

100

A/jjs

10

20

30

40

allowable peak on-state current vs.

7.

di/dt(Tc =90oc)

Maximum
di/dt (T C

I
814

80 100

50

RATE OF RISE ON-STATE CURRENT - A

/jus

allowable peak on-state current

=90C)

vs.

CI 49
1000

700
500

<*.,.

,?.*

^Ns

^o

400

^[^

^&

| 200

<

z
c

ioo

80

Nik

60

1
2

40

a.

30

S<k

20

(0

20

30 40 90

300 400 900

200

80 100

2000

800(000

5000 8000 K)pO0

PULSE BASE WIDTH-jUs

8.

Energy per pulse vs. peak current and pulse

width (di/dt = 100A/Aisec) T, = 125C

X?*,

600
TOO
600
500

>
rs&
*>.

<J

s?
300

0.

?.

4 200

s^-/

ee
a.
z>

u
<

80
70
60
50

40

w
z

^^'

IOO

Sfe

S^

a.

30

*.

20

(0

20

30

40 90

300 400 900

200

000

WOO

WOO

8000

10,000

PULSE BASE WIDTH-^s

9.

Energy per pulse vs. peak current and pulse

width (di/dt=25A/jusec) Tj = 125C

800
700

600

N^v

500

fr>

>>.
<&,

*a

300

200

\*

it

100

--N&

_|

>^a

I
200

900 40O 900 800 1000

PULSE BASE WIDTH10. Energy per pulse vs.

width (di/dt

jus

peak current and pulse

= 5A/jusec) Tj = 125C
815

9000

8OO0IQ0O0

C149

RECOVERED CHARGE DATA

30

20

500A
400A
300A
200A

o
10

o
O
SSoo
o

2 20
o

gg 1
o

I00A
I

TM = 50A

10

Is

S
<
X

O
.5

>

11.

50

20

10

REVERSE

100

10

REVERSE

di/dt - A/^.s

Sinewave Current Waveform

12.

50

20
di/dt -

100

A/^s

Sinewave Current Waveform

,1000
l

800

a.

500
400
300
200

100

80
125'c/ I25C
50

40
30
20

I0L

2.0

1.0

4.0

3.0

INSTANTANEOUS 0N- STATE VOLTAGE

13.

Maximum

5.0

VOLTS

On-State Characteristics

l* *X '*

l<4

in

&

^V

+3

/>s-t^

-LOAOLIN

***X.

-20V. 40f1- ,-A

NOTES:

'*V
**kTX

1.

Locus of possible
daries

2.
3.

shown

-40* c

20V,

20Q

LOADLINE
-

.125

-3

.5

.7

2.0
-

1.0

INSTANTANEOUS GATE CURRENT

14.

3.0

5.0

7.0

10

AMPERES

Gate Trigger Characteristics and Power Ratings

816

trigger points lies outside the

Rectangular gate pulses.

1 p = gate current pulse width.

-*,

DC

at the various case temperatures.

boun-

CI 49

<
3,000

INITIA

Tj

-40C TO +125 C

2,000

</>

<

5
Fid

x o<
u3

uj

<0

<
I-

.001

.1

PULSE BASE WIDTH -mS

Sub-Cycle Surge (Non-Repetitive) On-State Current

2
t Rating
and

15.

TIME
16.

SECONDS

Transient Thermal Impedance

Junction-To-Case

OUTLINE DRAWINGS

METRIC

METRIC
SYM.

INCHES
MIN.

TERMINAL

TERMINAL
2

CATHOOe

CATE

NOTE

2.

TERMINAL

THREAD SIZE

ANODE

MM

MAX.

MIN.

SYM.

MAX.

MM

INCHES
MIN.

MAX.

MIN.

MAX.

2.91

.422

.452

10.72

11.47

.090

.115

2.29

.120

.135

3.05

3.42

.055

.066

1.40

L67

.534

.565

13.57

14.34

.831

.901

21.11

22.88

1.230

1.290

31.25

32.78

.012

5.59
17.18

.029

.062

.74

1.56

.220

.256

REF

6.55

REF

.676

.684

.138

REF

3.50

REF

.597

.115

2.83

.240

300

6.10

7.62

.169

.182

4.30

4.62

.31

17

36

15.15

1/4-28 UNF-2A

COMPLETE THREADS TO WITHIN 2

THD. OF SEATING PLANE.

1/2

ONE STEEL, CADMUIM PLATEDNUT

AND ONE STEEL .CADMUIM PLATED
LOCKWASHER SUPPLIED WITH EACH
OEVICE

817

High Power

C150,2

Silicon

Controlled Rectifier
1300 VOLTS

ARMS

110

AMPLIFYING GATE

The General

Electric CI 50 and CI 52 Silicon Controlled Rectifiers are designed for phase control applications. These are all-diffused, Pic-Pac devices
employing the field-proven amplifying gate.

C150

FEATURES:

High di/dt Rating

High dv/dt Capability with Selections Available
Excellent Surge and I 2 t Ratings Providing Easy Fusing
Rugged Hermetic Package with Long Creepage Path

MAXIMUM ALLOWABLE RATINGS

TYPE

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM 1

VOLTAGE, V RRM 1

Tj = -40C to +125C

C150, C152E
CI 50, C152M

500 Volts
600
700
800
900
1000
1100
1200
1300

C150, C152S
C150, C152N
C150, C152T
CI 50, C152P

C150, C152PA
C150, C152PB
C150, C152PC
1

Tj = -40C to

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM

Tj = +125C

+125C

500 Volts
600
700
800
900
1000
1100
1200
1300

600 Volts
720
850
950
1075
1200
1325
1450
1550

Half sine wave waveform, 10 msec. max. pulse width.

RMS On-State Current, I T(RMS)

100 Amperes (All Conduction Angles)
Average On-State Current, I T(AV)
Depends on Conduction Angle (See Charts 1 and 4)
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
1500 Amperes
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
1400 Amperes
Critical Rate-of-Rise of On-State Current (Non-Repetitive)*
800 A//iS
Critical Rate-of-Rise
2
I

of On-State Current (Repetitive)*

>

(for fusing), for times

500 A/fis
7000 (RMS Ampere)^ Seconds

1.5 milliseconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)

10 Watts
2 Watts

Tstg
Temperature, T

Storage Temperature,

Operating

Stud Torque

125 Lbs.-In. (Min.)

14
*di/dt ratings established in accordance with

20 ohms gate

trigger source

40c to +150C
. 40 c to +125C
150 Lbs.-In. (Max.)
.

EIA-NEMA

with 0.5 jUsec short

N-m

Standard RS-357, Section 5.2.2.6 for conditions of

circuit trigger current rse time.

81 8

(Min.)

V DRM

17

N-m

(Max.)

stated above; 20 volts,

CI 50, C1 52

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

mA

V DRM
-

C150, C152E

C152M

CI 50, C152S

C150, C152N

C150, C152T
C150, C152P
CI 50,

CI 50,

CI 50,

C152PA
C152PB
C152PC

Repetitive Peak Reverse

and Off-State Current

10

500 Volts Peak

10

600

10

700

10

800

10

900
1000

10

10

1100

1200

1300

mA

Tj = +125C

V DRM

R0jc

Critical Rate-of-Rise of

dv/dt

200

C152M

C150, C152S
C150, C152N

C150, C152T
C150, C152P

C150, C152PA
CI 50, C152PB
CI 50, C152PC

V RRM
500 Volts Peak

20

15

20

600

15

20

700

15

20

800

15

20

900

15

20

1000

15

20

1100

10

13

1200

11

.2

.3

500

1300
C/Watt

Junction-to-Case

V/Msec

Tj = +125C, Rated V DRM Using Linear

Exponential Rising Waveform. Gate Open
,

v DRM

Circuited.

T
Higher

Ih

minimum

dv/dt selections available

20

500

mAdc

consult factory.

T c = +25C, Anode Supply = 24 Vdc.

Initial

Turn-On Delay Time

15

Off-State Voltage
(Higher values may
cause device switching)

Holding Current

and

Thermal Resistance

C152E

V RRM

Idrm

C150,

Irrm
CI 50,

Tj = +25C

and

Irrm
C150,

TEST CONDITIONS

UNITS

Idrm

td

Gate Pulse Width

/isec

10

Msec

Necessary to Trigger

Forward Current = 2 Amps.

T c = +25C, I T = 50 Adc, V DRM = Rated.

Gate Supply: 10 Volt Open Circuit, 20
Ohm, 0.1 /isec max. rise time

T c = +25 C. Gate Supply: 20

Circuit, 40 Ohm, 0.5 Msec rise
1

.0

Amps,

for

Volt Open
time.

T =

High di/dt Capability.

See Chart 9.

DC

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

Igt

VGT

V TM

50

150

75

200

15

125

1.25

3.0

mAdc

Vdc

T c = +25C, V D =
T c = -40C, V D =
T c = +125C, V D =
T c = -40C

RL
0.15

2.0

2.6

Commutated

tq

100

6 Vdc,
6 Vdc,

to +120C,

VD

RL
RL
RL

Ohms

= 3 Ohms
= 3 Ohms

= 6 Vdc,

Ohms

TC =+125C,VD = Rated, R L = 1000 Ohms

Volts

T c = +25C, I TM = 500 Amps.

Duty Cycle

Circuit

6 Vdc,

Msec

Turn-Off Time**

(1)

(2)
(3)

(4)

<

Peak.

0.01%

Tj = +125C

Itm = 50 Amps

VR = 50 Volts Min.
V DRM (Reapplied) =

Rated

(5) Rate-of-Rise of Reapplied Off-State

Voltage = 20V//Jsec Linear

guaranteed turn-off time is required.
f Consult factory if
** Typical turn-off time increases 30%, if Itm is increased to 500 amps,

g-jg

C1 50, CI 52
I80

~T

CI50
120

* *=

^^
\ >
\^

o-

80
30'

<

60* 90

~-,

^
120

I60

conductionI

ANGLE

'---.

100

DC

I70

140

^~

CI50

50

I40

l60 o

180

I30

^.

I20
IIO

I2QJ0

I00

90/

90
80

180

60V

70 -ANGJ-E
60

CONt>UCTI DN

A NGLE

soV

50
40

40

30

20

S\

0- conduction!

20

10

40 50 60
70
80
90 100
AVERAGE ON -STATE CURRENT - AMPERES

20

10

1.

30

120

110

10

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM
50

30
40
50 60 70
80
90 100
AVERAGE ON-STATE CURRENT-AMPERES

20

120

IIO

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

TO 400 CPS
140

DC

CI50

CI50

3500

s\\

?I20

$3000

a.

180

zioo

DUTY CYCLE

UJ

UJ

* 2500
90

a.

l2

80

Ul

-60'

o
< 1000

I/4

I/3

I/2

^40
s

/ VVVV\\\i
500

"^

o
IC

)0

3C

5C)0

conduction!

7C)0

ANGLE ^

2 20

9(50

<
S
10

AVERAGE ON3.

I/8

I/6

; 60
I
o

30

Ld
"*

DUT 1 CYC LE

ui

ANGLE
I

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

a 0 5
70
80
90
6
AVERAGE ON- STATE CURRENT- AMPERES
'

I00

I20

IIO

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT
WAVEFORM - 50 TO 400 CPS

(EXTENDED RANGE)
180

4000
1

CI50

3500

1/2

S3000
1/3

*2500

1/4/

1/8/

DUT y CYCLE
I/I6

I500

,\v
1

IT

500
20
5.

30
40 50 60 70
80
90 100
AVERAGE ON - STATE CURRENT - AMPERES

MAXIMUM ON-STATE POWER

\V<

< 000

-J

OUTY CYCLE

A^

120

ICX)

3C)0

5C)0

7()0

9C

AVERAGE ON -STATE CURRENT- AMPERES

DISSIPATION

ON-STATE POWER DISSIPATION FOR

RECTANGULAR CURRENT WAVEFORM

FOR RECTANGULAR CURRENT WAVEFORM

820

II

00

C1 50, CI 52

10000

^^^-

10

\i
a

'

CI90

"tfg 6
i-ze

1000

r
Tj-izsy
100

Af&K

JUNCTION
TEMPER ATUFE
BLOCKING VOLTAGE*

"-^^

25* C

/
111

z
<

53a

10

$11

12

in

z
-

56789

1.0

2
3
4
PULSE WIDTH- MILLISECONDS

INSTANTANEOUS ON -VOLTAGE -VOLTS

FORWARD CONDUCTION

C150

SUB-CYCLE SURGE RATING FOLLOWING

RATED LOAD CONDITIONS

CHARACTERISTIC, ON-STATE

100

80

-^

60

:._

25 WATTS

40
10

WATTS

"

,.,T

4Uli StL

MAX

htvki

>

Tp=IOMSECMAX

p -

WATTS
Tp= 150^1 SEC MAX
100

1~

20

NOTES:
1. Maximum
2.

3.

DC

trigger points

lie

outside the

Tr

Rectangular Gate Current Pulse Width.

ATdi/ jt< 00 Af"1* Tp=5/iSE C

1'max r ISE TIHHE

.4

.6

.8 1.0

2,

4.

8.10

6.

INSTANTANEOUS GATE CURRENT

9.

allowable gate power dissipation = 2 Watts.

locus of possible

'1^20V,'20ii Is'mi'nIMU M GATE SOURCE LOAD LINE

.-4 AT di/H.- 100 AMP/
fi Tp = 5/J.SECMIN..
\ 'o.5^ sec M< X RISE TIME
1 |20V,6 3U 5M N MUM GATE SCHJRCE LC A( 5LINE

-1

0.1

The

boundaries shown at various case temperatures.

^^
'.

o
o
m om *
CO

10

Ml N.,

20

3^ SEC

6 8

10

AMPERES

GATE TRIGGERING CHARACTERISTICS

0.6

CI5

6$s

0R

0.3

'

0.2

10

DR3

A JL

m Wm L

DC

0.I

10

100

T IME

10.

l0

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

821

'-

DO

C150,C152

OUTLINE DRAWINGS
SEATING PLANE

SYM
A
B
C

TERMINAL

MODEL

TERMINAL

GATE

CI52

TERMINAL

CATHODE

THREAD SIZE

ANODE

1/2-20

MM

MAX

1.020 1.140

.390

MAX.

MIN.

SYM.

25.90 28.96

INCHES
MIN
MAX

METRIC

MM

MIN

NOTES

MAX

14 98 16.26

.590

.640

.058

.070

.840

.910

21.33 23.1

.425

.499

10.79

.060

9.90 12.70

.500

1.460 REF

7.92

REF

l.660|

1.800 42. 16 45 72

.312

REF

.797

.827

.060

.075

.385

.415

.445

.485

.198

.212

1.47

1.78

92 REF

20.24 21.01
1.52

1.91

9.77 10.54
1

30

12

32

12.67
2

1.52

1.052 1.063 26.72 27.00

UNF-2A

NOTES:
1. One

METRIC

INCHES
MIN.

5.02

5.38

nut and one lockwasher supplied with each unit.

is steel, cad plated.

Material of hardware
2.

"T" dimension

is

area of unthreaded portion.

Com-

plete threads are within 2.5 threads of seating plane.

3.

Angular orientation of terminals

is

undefined.

SYM

INCHES
MAX.

MIN.

CI

50

GATE

AUX
CATHODE

CATHODE

ANODE

S
THREAD SIZE
I/2

20UNF-2A

NOTES:
1.

Gate and

auxiliary

cathode

leads

supplied

lightly

twisted together.
2.

Flexible copper lead.

3.

One nut and one lockwasher

Material of hardware

4.

"R" dimension

5.

"T" dimension

is
is

is

steel,

supplied with each unit.

cad plated.

diameter of effective seating area.

area of unthreaded portion.

Com-

plete threads are within 2.5 threads of seating plane.

6.

Angular orientation of terminals

is

undefined.

822

INCHES
MAX.

MIN.

METRIC

MM

MIN

NOTES
MAX.

.330

275

325

6.98

39.87

4445

.065

.095

1.65

2.41

6.000 6.390 152.40

162.31

B40

.910

21.33

23.11

6.850 7,500 173.99 190.50

.425

.499

10.79

12.67

.920

I.020 1.140

.390

.500

1.570 1.750

797

.827

.140

.150

SYM

9.90 12.70

MAX

2590 28.96

TERMINAL TERMINAL TERMINAL TERMINAL

MM

MODEL

METRIC
MIN.

20.24 21.01
3.55

.300

.500

.610

.260

.281

3.81

8.38

23.36

060

8.26

1.57

7.62
12

70 15.49

6.60

7.14

1.052 1.063 26.72 27.00

C154, C156

HIGH SPEED

C155, C157
Silicon Controlled Rectifier

600 VOLTS 110A RMS

AMPLIFYING G ate

'~r

Electric CI 54, CI 55, CI 56 and CI 57 Silicon Controlled Recdesigned for power switching at high frequencies. These are all
diffused Pic-Pac devices employing the field proven amplifying gate.

The General
tifiers are

FEATURES:

High di/dt

High dv/dt capability with selections available.

2
Excellent surge and I t ratings providing easy fusing.
Guaranteed maximum turn-off time with selections available.

Rugged hermetic package with long creepage path.

ratings.

C1 56/1 57

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM

VOLTAGE, Vrrm

TYPES

C155A,

C154B,
C156B,

C155B,

C154C,
C156C,

C155C,

C154D,
C156D,

C155D,

C154E,
C156E,

C155E,

C154M,
C156M,

C155M,

C157A
C157B
C157C

C157D
C157E

C157M

Half sinewave waveform, 10

RMS

On-State Current,

ms max.

100 Volts

160 Volts

200

200

260

300

300

380

400

400

480

500

500

600

600

600

720

pulse width.

I
I

2
2
I

TSM (60 Hz)

TSM (50 Hz)

>

1.5 milliseconds

(for fusing) for times

>

8.3 milliseconds

9,500
13,500

f,*'

(RMS Ampere f Seconds

(RMS Ampere) 2 Seconds
_,, cri o
+150
C
40 C to +125C
'

-40

mPe
'.

'.

!
!

'.

".

'.

'.

'.

'.

823

"

to

125 Lb,In. (Min.)

"l Lb,In. (Max.),
v
;'

17

Standard RS-397,
tdi/dt ratings established in accordance with EIA-NEMA
trigger current rise time.
20 ohms gate trigger source with 0.5ms short circuit

AP eres

A/^s T

Average Gate Power Dissipation, P G (AV)

T
Storage Temperature, T st
Pe r
8
?t
d Tor
Torque
aue
Stud

700

On-State Current, Repetitive

fusing) for times

t (for

*1 Am P eres
iSUU Amperes

T(RMS)

Peak One Cycle Surge (Non-Repetitive) On-State Current,

Critical Rate-of-Rise of On-State Current, Non-Repetitive

Tj = +125C

100 Volts

Peak One Cycle Surge (Non-Repetitive) On-State Current,

Critical Rate-of-Rise of

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM

Tj = -40 C to +125C

-40C to +125C

C154A,
C156A,

N-m

(Max.), 14

Section 5.2.2.6 for conditions of max. rated

\
(Min.)
N-m m-

V DRM

20

volts,

C154,C156
C155,C157

CHARACTERISTICS
SYMBOL

TEST
Repetitive Peak Reverse
and Off-State Current

MIN.

Irrm

TYP.

MAX.

UNITS

12

mA

and

Idrm
Repetitive Peak Reverse
and Off-State Current

12

Irrm

mA

17

R0JC

Critical Rate-of-Rise of
Off-State Voltage (Higher
values may cause device
switching)

dv/dt

Trigger Voltage

.2

.3

C/Watt
V/lisec

vdrm

200

500

100

300

For higher

minimum

Ih

Igt

Tj = +125 C, Gate Open. VDRM = Rated,

Linear or Exponential Rising Waveform

VpR-

(.632)

V GT

100

dv/dt selections

consult factory.

mAdc

T c = +25C, Anode Supply = 24 Vdc.

Initial

On-State Current = 2 Amps.

Tc =

+25C,
-40C,

50

150

100

200

Tc =

30

120

T c = +125C,

T c = -40C to 0C,
R L = 3 Ohms

3.0

5.0

1.25

3.0

mAdc

Vdc

T c = 0C

VTM

td

2.2

= 6 Vdc,

= 3

Ohms

= 3

Ohms

= 3

Ohms

V D = 6 Vdc,

to +125C,

VD

= 6 Vdc,

Ohms

3.0

Volts

/usee

T c = +25C, I T = 50 Adc, V DRM Gate

Supply: 20 Volt Open Circuit, 20 Ohms,
,

(1)

(2)
(3)
(4)

= 6 Vdc,

RL
RL
RL

T c = +25C, I TM = 500 Amps. Peak

Duty Cycle < .01%

/Usee

C155/C157

= 6 Vdc,

T c = +125C, V DRM R L = 1000 Ohms

tq

C154/C156

VD
VD
VD

0.1 /usee

Conventional Circuit
Commutated Turn-Off
Time (with Reverse
Voltage)

VRRM

0.15

Turn-On Delay Time

Junction-to-Case

RL =
Peak On-State Voltage

V RRM

C155/C157

DC

Exponential dv/dt =

C154/C156

Gate Trigger Current

vdrm

Tj = 125C

v
-

Thermal Resistance

DC

and

Idrm

Holding Current

TEST CONDITIONS
Tj = +25C

10

12

20

max.

rise

time.

Tc = +125C
I TM = 150 Amps.

V R = 50 Volts Min.
V DRM (Reapplied)

Rate-of-Rise of Reapplied Off-State

Voltage = 20 V/psec (linear)
(6) Commutation di/dt = 5 Amps//zsec.
.01%
(7) Duty Cycle
(8) Gate Bias During Turn-Off Interval =
Volts, 100 Ohms
(5)

<

Conventional Circuit
Commutated Turn-Off
Time (with Feedback)
Diode)

fisec

tq(diode)

(1)

T c = +125C

(2)

T m = 150 Amps.
V R = Volt
V DRM (Reapplied)

(3)

(4)

C154/C156

C155/C157

12

15

Voltage = 20 V/jUsec
(6)
(8)

maximum

turn-off time.

824

(5) Rate-of-Rise of Reapplied Off-State

(7)

(Consult factory for specified

Commutation di/dt =
Duty Cycle < .01%

Amps//Jsec

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

SINE

WAVE DATA

C154,C156
C155.C157

2000

I00

tf

A /MS/

i*r~

/?

hs^~
-^C'Oy,

^V*0
s

<Q

2500

IOK

I000

I00

PULSE BASE WIDTH-MICROSECONDS

Maximum

1.

allowable peak on-state current

vs.

pulse width (T c = 65C)

2000
I00A/M S

<*
>r
'/

fr*

//

4>
/>i

>3^
\sc

Cr,

S^
200

'

"V

10 CA)

\ioo

.^^
i

1000

100

PULSE BASE WIDTH-MICROSECONDS

2.

Maximum

allowable peak on-state current

vs.

pulse width (T c = 90C)

NOTES:
(Pertaining to Sine and Rectangular
1.

Switching voltage

2.

Maximum

3.

4.
5.

6.

Ratings)

ckt. dv/dt = 100 volts/jusec.

Required gate drive:
20 volts, 20 ohms, .5 Msec rise time.
400 volts.
Reverse voltage applied = Vr
R-C Snubber ckt. = .25 Mf, 5 ohms.

<

Max. energy dissipated during reverse recovery to be

15% of total W-S/P shown or 0.03 W-S/P, whichever
is

7.

Wave Current

< 400 volts.

least.

Values of W-S/P are for Tj = 125C.

825

SINE

C154 C156

WAVE DATA

C155,C157

I00

IOOO

PULSE BASE WIDTH-MICROSECONDS

3.

ENERGY PER PULSE FOR SINUSOIDAL PULSES

50% DUTY CYCLE

25% DUTY CYCLE

UJ
Q.

< JVW

JULSt PE
"SECOND

1-

--

60
_4(30

a:

O
5
n

IO0

IOOO

---

<t

Q.

60

80

I00

60

RATE OF RISE ON -STATE CURRENT

AMPERES PER MICROSECOND
4.

80

100

RATE OF RISE ON'-STATE CURRENT

AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

5.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

V)
UJ
Q_

= 300
z
UJ
or

o
uj

'50

PtJL S(:,S
I

O
x:

PE

Sf iCONC

60

100

80

<
-

60

T-

z3

43

s1

10 n

10
20
30
40
60
RATE OF RISE ON-STATE CURRENT
AMPERES PER MICROSECOND

RATE OF RISE ON- STATE CURRENT

AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

7.

826

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 90C)

C154,C156
CI 55, C1 57
1

BOO

WATT- SEC /PULSE

600
500

0.20

0.2i

0.50

0.4

0.6 |0.8

0.5J

1.0

^n.jmb''

1.5

^S^S,

^"^^J^oi-T*
j*|2
0.10

200

QOB
0.06
I00

80
0.04

60
50

OJ33

0.02

40
30
20

di/dt

20

40 50 60 80

30

3K

II

ENERGY PER PULSE

8.

till

400 600 BOO

PULSE BASE WIDTH-MICROSECONDS

100

4K 5K 6K

8K IOK

PEAK CURRENT

VS.

AND PULSE WIDTH

100 AMPS/fiSEC

(di/dt

= 100 A/,usec)

I
1

WATT -SEC /PULSE

0I5

0.2

0.25

0.3

0.4

0.6 6.B

0.5

v. r^i^j

O.I

^i

1.0

1.9

0.08

300

006

N^O

200

^
<

0.05

0^04

- --H

0.02

0,015

^i ^
^>

<V

di/dt

5 06o

TO

X>

4<

6C

WW X>l K

3K

2K

25 AMPS/^SEC

4 K 5 K K

8K

PULSE BASE WIDTH- MICROSECONOS

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 25 A/^sec)

9.

800

WATT- SEC/ PULSE

0.25

500

0.3

0.4

0.5

OB

.1.0

0.20
15

400

2y
K

08
0.0*

<

0.C

*J

0.03 ^

002

5
<

100
0.01 5

0.01

w^
^^*

o
<

di/dt

20

10.

30

40 50 60

80 100
200
400 600 80O IK
PULSE BASE WIDTH- MICROSECONDS

2K

3K

5 AMPS//xSEC

4K 5K 6K

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5 A/usec)
827

8K IOK

INSTANTANEOUS ON-STATE VOLTAGE

11.

.2

VOLTS

.3

.4

.5 .6

.8

MAXIMUM ON-STATE CHARACTERISTICS

12.

1.0

INSTANTANEOUS GATE CURRENT

AMPERES

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS

15,000
LU
CO

10,000
<0

8,000

a:

6,000
INITIAL Tj

1
Ult
>l-

-40C TO +I25*C

4,000

*U1

3,000
cooo:
U-UJQ.

2,000

UJO

10

20

30

40

- 1.000

60

NUMBER OF CYCLES AT 60 Hz
13.

1.5

MAXIMUM ALLOWABLE SURGE

(NON-REPETITIVE) CURRENT

14.

s
UJ
0.

0.3

UJ

o
z

0.2

<
z
cc
UJ
t-

0.1

\-

UJ

a:
i-

15.

30
MILL ISEC-or J.D S
1

MILLISECONDS

IE

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING

0.4

PULSE BASE WIDTH

6<

+
TIME

S EC ONDf

>

TRANSIENT THERMAL IMPEDANCE - JUNCTION-TO-CASE

828

RECOVERED CHARGE DATA

500
400
300
,200

.
>

'

10

100

-1

TM= 50
AMPERES
I

6
5

4
3

50

AMPERES

<
X
o

0.8

0.6
0.5
Ul

>

o
2
*
17.

REVERSE

di/dt

30

10

60

40 50 60

16.

125C)

TYPICAL RECOVERED CHARGE DATA

I00

GATE

AUX
CATHODE

CATHODE

ANODE

METRIC

INCHES

SYM

MIN.

MAX.

MIN.

MM

MAX

MIN.

NOTES

MAX.

020

1.140 25.90 28.96

.330

.390

9.90 12.70

275

.325

6.98

570 1.750 39.87 44.45

.065

.095

165

2.41

21.33

23.11

1079

12.67

1.

1.

.500

8.38

6.000 6.390 152.40

162.31

840

.910

6.850 7,500 173.99 190.50

.499

.797

.827

.140

.425

20.24 21.01

.920

3.81

3.55

.150

.300

7.62

500

.610

12.70 15.49

.260

281

MAX

MIN.

MET RIC

INC HES

SYM
A

TERMINAL TERMINAL TERMINAL TERMINAL

(Tj = 25C)

SINEWAVE CURRENT WAVEFORM

OUTLINE DRAWING
SEATING PLANE

CI54, CI55

30 40 5060 80

20

10

REVERSE di/dt(AMPERES/^SEC)

TYPICAL RECOVERED CHARGE DATA (Tj

SINEWAVE CURRENT WAVEFORM

MODEL

34568

100

(AMPERES/^. SEC)

6.60

8.26

23.36

1.57

.060

1.052 1.063 26.72 27.00

7.14

THREAD SIZE
I/2

20UNF-2A

NOTES:

GATE 9 AUX. CATHODE LEADS SUPPLIED LIGHTLY TWISTED TOGETHER.

FLEXIBLE COPPER LEAD.
.,., r
3 ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT. MATERIAL OF
HARDWARE IS STEEL, CAD PLATED.
4. "R" DIM. IS DIA. OF EFFECTIVE SEATING AREA.
5 "T" DIM IS AREA OF UNTHREADED PORTION. COMPLETE THDS. ARE
WITHIN 2.5 THREADS OF SEATING PLANE.
6. ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.
1.

2.

SEATING PLANE

SYM
A
B

MODEL

CI56, CI57

NOTES:

2
'

3.

TERMINAL

SATE

TERMINAL

CATHODE

TERMINAL

ANODE

THREAD

SIZE

1/2-20 UNF-2A

+
MATERIAL

ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT.

OF HARDWARE IS STEEL, CAD PLATED.
COMPLETE THDS. ARE
"T" DIM IS AREA OF UNTHREADED PORTION.
WITHIN 2.5 THREADS OF SEATING PLANE.
ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.

829

MAX

MAX

MIN.

1.020 1.140 25.90 28.96

.390

1.460 REF

I.660J 1.800

.312

REF

.797

.827

.060

.075

.385

.415

.445

485

.198

212

SYM.

INC HES
MAX
MIN.

MET!?IC
Mlit
MAX.
MIN.

.590

.640 14 98 16.26

.058

.070

.840

.910

21.33 23.1

.425

.499

10.79

.060

NOTES

9.90 12.70

.500

ME rRic
MM

INC HES

MIN

92 REF

42. 16

1.47

1.78

45 72

7.92 REF.

20.24 21.01
1.52

1.91

9.77 10.54
1

1.30 12

5.02

32

5. 38

12.67
1.52

1.052 1.063 26. 72 27. OC

1

HIGH SPEED

C158

- C159

Silicon Controlled Rectifier

1200 Volts

110

AMPLIFYING

A RMS

_jjf

GATE

The General Electric CI 58 and CI 59 Silicon Controlled Rectifiers are de

signed for power switching at high frequencies. These are all-diffused Pic
Pac devices employing the field-proven amplifying gate.

FEATURES:
High di/dt

ratings.

High dv/dt capability with selections available.

Excellent surge and I 2 t ratings providing easy fusing.

Guaranteed

maximum

turn-off time with selections available.

Rugged hermetic package with long creepage path.

C1S8

C159

HIGH FREQUENCY CURRENT RATING

23C

<
i-

\
\

S\J\

V)

<

sir

~\
\

M90OAL VWWEFORM

D%

DUTY CYCLE
18 0 CONDUCTION

8 DO

50% DUTY

RECTANGULAR WAVEFORM

CYCLt

di/dt -25 jU SEC

S5C CASE TEMPERATURE

VOLT SWITCHING

100

FREQUENCY

IN

1000

Hz

FREQUENCY

IN

HZ

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM

VOLTAGE, V RRM

TYPES
C158E,
C158M,
C158S,
C158N,
C158T,
C158P,
C158PA,
C158PB,

I
1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

500 Volts
600
700
800
900
1000
1100
1200

500 Volts
600
700
800
900
1000
1100
1200

600 Volts
720
840
960
1080
1200
1300
1400

C159E

C159M
C159S

C159N
C159T
C159P
C159PA
C159PB

Half sinewave waveform, 10

ms max.

pulse width.

830

CI 58, C1 59
1 10 Am P eres
1600 Amperes
1500 Amperes
2
Seconds
Ampere)
5,200 (RMS
2
Seconds
Ampere)
(RMS
10,500
800 A//xsf
500 A//us t

RMS On-State Current, I T (rms)

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
I

2
t

(for fusing) for times

(for fusing) for times

2
I

>
>

1.5 milliseconds

8.3 milliseconds

Critical Rate-of-Rise

of On-State Current, Non-Repetitive

Critical Rate-of-Rise

of On-State Current, Repetitive

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

-40C to +125C
150 Lb.-In. (Max.), 125 Lb.-In. (Min.)
17 N-m (Max.), 14 N-m (Min.)

Operating Temperature, Tj

Stud Torque

j-di/dt

20

ratings established in accordance with

ohms

2 Watts
.-40C to +150C

gate trigger source with 0.5

jus

Standard RS-397, Section 5.2.2.6 for conditions of max. rated

EIA-NEMA

VnRM;

20 volt s,

short circuit trigger current rise time.

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITION

UNITS

mA

Irrm

Tj = +25C

Vdrm

and

v rrm

Idrm

C158E, C159E

C158M, C159M
C158S,

C159S

C158N, C159N
C158T, C159T
C158P, C159P

C158PA,C159PA
C158PB,C159PB
Repetitive Peak Reverse
and Off-State Current

10

500 Volts Peak

10

600

10

700

10

800

900

1000

1100

1200

mA

Irrm

Tj = 125C

V DRM

and

V RRM

Idrm
C158E, C159E

C158M, C159M
C158S, C159S
C158N, C159N
C158T, C159T
C158P, C159P

C158PA,C159PA
C158PB,C159PB
Thermal Resistance

Rfljc

Critical Rate-of-Rise of

dv/dt

12

15

500 Volts Peak

12

15

600

12

15

700

12

15

800

12

15

900

12

15

1000

12

17

1100

12

18

200

500

.2

.3

1200
C/Watt

Tj = +125C, Gate Open. V DRM = Rated

Linear or Exponential Rising Waveform.

V/jUsec

Off-State Voltage (Higher

values may cause device
switching)

Exponential dv/dt Higher

Holding Current

Junction-to-Case

Ih

minimum

dv/dt selections available

100

mAdc

consult factory.

T c = +25C, Anode Supply =

Initial

DC

Gate Trigger Current

Igt

80

150

150

300

30

125

831

mAdc

V RM U32)

25 Vdc.
On-State Current = 2 Amps.

T c = +25C, V D =
T c = -40C, V D =
T c = +125C, V D =

6 Vdc,
6 Vdc,
6 Vdc,

RL
RL
RL

= 3
= 3

Ohms
Ohms
Ohms

C158,C159

CHARACTERISTICS
TEST

DC

Gate Trigger Voltage

Peak On-State Voltage

SYMBOL

MIN.

vGT

0.15

VTM

(Continued)

TYP.

MAX.

UNITS

Vdc

1.25

3.0

2.8

3.5

TEST CONDITION
T c = -40C to 0C, VD = 6 Vdc, R L = 3 Ohms
T c =0C to 1 25C, VD = 6 Vdc, R L = 3 Ohms
T c = 125C, VDRM R L = lOOOOhms
,

Volts

T c = +25C, I TM = 500 Amps.

Duty Cycle

Turn-On Delay Time

td

0.5

/usee

20

tq

/isec

Peak.

.01%.

T c = +25C, I T = 50 Adc, VDRM Gate

Supply: 20 Volt Open Circuit, 20 Ohm,
,

0.1 isec

Conventional Circuit
Commutated Turn-Off
Time (with Reverse
Voltage)

<

max. Rise Time, tt.ttt

(1)

T c = +125C

(2)

(3)
(4)

(5)

T = 150 Amps.

V R = 50 Volts Min.
V DRM (Reapplied)
Rate-of-Rise of Reapplied Off-State
V/jltsec (Linear)

Voltage = 20
(6)

Commutation

(7)

Repetition Rate =

(8)

25

40

jUsec

(1)
(2)

(3)
(4)

di/dt

Amps/jUsec

pps.

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

T c = +125C
I

T = 150 Amps.

V R = 50 Volts Min.
V DRM (Reapplied)

Rate-of-Rise of Reapplied Off-State

Voltage = 200 V//isec (Linear)
(6) Commutation di/dt = 5 Amps//isec
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
(5)

Volts, 100

Conventional Circuit
Commutated Turn-Off

tq (diode)

40

(1)
(2)

Time (with Feedback

(3)

Diode)

fConsult factory for specified

jusec

(4)

maximum

T c = +125C
I

T = 150 Amps.

V R = 1 Volt
V DRM (Reapplied)

(5)

Rate-of-Rise of Reapplied Off-State

Voltage = 200 V//isec (Linear)

(6)

Commutation

(7)

Repetition Rate =

(8)

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

Turn-Off Time.

tfDelay Time may increase significantly as the gate drive approaches the Igt of the Device Under Test.
tttCurrent rise time as measured with a current probe, or voltage rise time across a non-inductive resistor.

832

Ohms

di/dt
1

Amps/^sec

pps.

SINEWAVE CURRENT RATING DATA

C158,C159

^
/

BOO
600
500

400

/s^

kJ

3^
\

500

000

>

I500

\\

2SOO

X
z

5000

7500

^**

'00 <*

o
5

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

^io,ooo

su

40

JO

40

SO

SO 60

100

00

SOO 4O0 SOO GOO SOO

2000

3000 4000 6 000 BOOO

10,000

PULSE BASE WIDTH-MICROSECONDS

<?.

"^"W^

600
500
400

2
^"-"Tooo
1500

2500

\
2.

l0

^ ^~*~

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)

'

-***7500

60
,

5
ft

uo

4U

50 60

BO

100

200

300 400 SOO 600 BOO

IOO0

ZOOO

3000 4000 6000(000 10,000

PULSE BASE WIDTH-MICROSECONDS

3.

100

ENERGY PER PULSE FOR SINUSOIDAL PULSES

1000

PULSE BASE WIDTH -MICROSECONDS

NOTES:
(Pertaining to Sine and Rectangular
1.
2.

3.
4.

Wave Current

Ratings)

Switching Voltage = 800 Volts.

Maximum ckt. dv/dt = 200 Volts/Msec
800 V.
Reverse Voltage Applied = Vr
Required Gate Drive:
20 volts, 65 ohms, 1 Msec rise time for less than 100

5.

6.

<

amps/jusec

20 volts, 20 ohms,
1 00 a mps/Msec.

.5 Msec rise

time for greater than

833

7.

Snubber ckt. = 0.25 Mf, 5n

Max. energy dissipated during reverse recovery to be
15% of total W-S/P shown in chart 5 or 0.03 W-S/P
whichever is least.
Values of W-S/P are for Tj = 125C.

RC

RECTANGULAR WAVE CURRENT RATING DATA

C158,C159

DUTY CYCLE - 50%

(0

300

tr

300

ui
a.

<E
UJ

200

I
SES PER SECOND"

UJ
tr

60

tr

~"

tc
tr

I00(

100

(J

80
60

z
o

<
20

10

30

40

60

too

PULSES PER SECO

ND

80

2500

200

bU
40C

60

j OOC)

<

80 100

UJ

Q.

RATE OF RISE ON -STATE CURRENT

AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

8 10
20
30 40
60
RATE OF RISE ON-STATE CURRENT
AMPERES PER MICROSECOND

80 100

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90 C)

DUTY CYCLE - 25%

300

300
Pill

SES P - R
Second

t>0

200

200

^i^J^OHO

4 DO

60j

z
|

UJ
(T
IE

2500 ---

1000
tr

100

80

_400
100
|

80

60

JOOO

60

z
o
__

8 10
20
30 40
60
RATE OF RISE ON -STATE CURRENT
AMPERES PER MICROSECOND

80

100

<
UJ

8 10
20
40
60
RATE OF RISE ON -STATE CURRENT
AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

80 100

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

WATT-SECOND PER PULSE

s^

-J

"\7.0VHAT T- SEC

400

.5

a.

rNo.0

0.9

^v

s029
0.1

100

eo

05
a.

40

60

80 100
ZO

PULSE BASE WIDTH-MICROSECONDS

8.

ENERGY PER PULSE

AND PULSE WIDTH

VS.

90

100

200

400 600 600 1000

PULSE BASE WIDTH - MICROSECONDS

PEAK CURRENT

(di/dt

40

9.

= 100 A//usec)

834

ENERGY PER PULSE

AND PULSE WIDTH

VS.

PEAK CURRENT

(di/dt

= 25 A/jusec)

C158,C159

100
200 400 800
2000 4000 8000
6000 10,000
600 1000
PULSE BASE WIDTH -MICROSECONDS

40 60 80

10.

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5 A/jusec)
40

25C^

* *^

30

I25C

y
o
s
-J
o

>

UJ

<

S
Z
<

25c|

~i
o
UJ

*<\

+N.

^SV-

-40"C

+s

LOCUS OF
POSSIBLE
DC
TRIGGER

oc

I25 c

-20V, 2011 LOADLINE

.2

10

.3

.4

.6

.8

2.0

1.0

3.0 4.0

6.0 8.0 10.0

INSTANTANEOUS GATE CURRENT -(AMPERES)

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

11.

-^v

*cN?

PC INI'S

25C

23456789

fti.V>.

v>

-r

tfNft*.

10

,4.

<2>fcV

MAXIMUM ON-STATE CHARACTERISTICS

12.

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS

- 15,000

2000

lu

1700-

c7

1500

10,000

| 8000

a:

6000

I s

- 5000

1200

4000
INI" 'IAL

= 1000
I
*

UJ

ui

Tj =

-40C

+12 5C

3000

<t

UJ

ON-STA

OO

HALF

INIT IAL Tj

4C C

'

CURRENT

(AMPERES)

+125

OO
PEAK
SINEWAVE

600
1.5

10

NUMBER OF CYCLES AT 60
13.

33

20

1.

P ULSE BAS

Hz

SURGE (NON-REPETITIVE) ON-STATE CURRENT

14.

>i

WIDTH mSE C

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING
l

835

ii

l<

C158,C159

LOW FREQUENCY DATA

500
400
300
400
300
=4.

TM 50A
=

**""

^^

//
REVERSE

15.

2>
s
// ^

di/dt

60
A//i

SO

OO

SEC

REVERSE dl/dt- A//i SEC

TYPICAL RECOVERED CHARGE (125C)

SINEWAVE CURRENT WAVEFORM

16.

TYPICAL RECOVERED CHARGE (25C)

SINEWAVE CURRENT WAVEFORM

UJ

<

o
UJ
a.

(CK

.1

UJliJ

2
UJ

.01

.001

.1

10

TIME (SECONDS)

17.

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

836

100

CI 58, C1 59

OUTLINE DRAWINGS

SEATING PLANE

INCHES
MAX.

SYM

MIN.

A
B
C

1.

METRIC

MM
MAX

020 1.140 25.90 28.96

.390
1.

SYM.

MIN.

INCHES
MIN
MAX

METRIC

MM

MIN

NOTES

MAX.

14 98 16.26

.590

.640

.058

.070

.840

.910

21.33 23.1

.425

.499

10.79

.060

9.90 12.70

.500

460 REF

7 92

REF

1.47

1.78

l.660|l.8OO 42. 16 45 72
1

TERMINAL

TERMINAL

GATE

CATHODE

ANODE

MODEL

TERMINAL

CI59

THREAD

SIZE

I/2-20 UNF-2A

+
NOTES:
1.

2.

3.

ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT.

OF HARDWARE IS STEEL, CAD PLATED.

.312

797

.827

.060

.075

.385

.4

.445

485

.198

212

MATERIAL

COMPLETE THDS. ARE

IS AREA OF UNTHREADED PORTION.
WITHIN 2.5 THREADS OF SEATING PLANE.
ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.
"T" DIM.

SYM

J_

RED

T
MODEL
CIS8

GATE

AUX
CATHODE

CATHODE

ANODE

1.30 12.32

12.67
1.52

5.38

5.02

MET RIC

MM

SYM

MAX.

INCHES
MAX.

METRIC

MM

NOTES

MAX.

1.020

1.140 25.90 28.96

.330

.390

.500

9.90 12.70

275

.325

6.98

1.570 1.750

39.87 44.45

.065

.095

1.65

2.41

6.000 6.390 152.40 162.31

40

.910

21.33

23.11

6.850 7,500 173.99 190.50

.425

.499

1079

12.67

.797

.140

.827
.150

20.24 21.01
3.55

3.81

.300

7.62
12.70 15.49

500

.610

.260

281

660

1.052 1.063 26.72 27.00

TERMINAL TERMINAL TERMINAL TERMINAL

1.91

9.77 10.54

MAX. MIN.

^r?

1.52

15

INC HES

20.24 21.01

MIN.

SEE NOTE 2

7 92 REF

REE

MIN.

T
V

.920

.060

MIN.
8.36

23.36

8.26

1.57

1.052 1.063 26.72 27.00

7.14

THREAD SIZE
1/2

20UNF-2A

NOTES:

GATE a AUX. CATHODE LEADS SUPPLIED LIGHTLY TWISTED TOGETHER.

FLEXIBLE COPPER LEAD.
3 ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT, MATERIAL OF
HARDWARE IS STEEL, CAD PLATED.
4. "R" DIM. IS DIA. OF EFFECTIVE SEATING AREA.
5. "T" DIM IS AREA OF UNTHREADED PORTION. COMPLETE THDS. ARE
WITHIN 2.5 THREADS OF SEATING PLANE.
6. ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.
1.

2.

837

HIGH SPEED

C164/C165

Silicon Controlled Rectifier

110A

800Volts

RMS

^f

AMPLIFYING
GATE

The General Electric CI 64 and CI 65 Silicon Controlled Rectifiers are de

signed for power switching at high frequencies. These are all-diffused Pic
Pic devices,

employing the field-proven amplifying

gate.

FEATURES:

High di/dt Ratings.

High dv/dt Capability with Selections Available.

Excellent Surge and I 2 t Ratings Providing Easy Fusing.
Guaranteed Maximum Turn-Off Time with Selections Available.

Rugged Hermetic Package with Long Creepage Path.

C 164-2
C165-2

C164
CI 65

Equipment designers can use the CI 64 and CI 65 SCR's

in

demanding applications such

Choppers

Sonar Transmitters

Cycloconverters

Inverters

Induction Heaters

DC

to

DC

as:

Converters

MAXIMUM ALLOWABLE RATINGS

TYPES

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM

VOLTAGE, Vrrm 1

Tj = -40C to +125C

C164/C165A
C164/C165B
C164/C165C
C164/C165D
C164/C165E
C164/C165M
C165S

C165N
1

Half sine wave wavefoim, 10

ms max.

Tj = -40C to +1 25C

Tj = +125C

100 Volts

100 Volts

200
300
400
500
600
700
800

200
300
400
500
600
700
800

200 Volts
300
400
500
600
720
840
960

2
t

(for fusing) for times

(for fusing) for times

2
I

Critical Rate-of-Rise

Critical Rate-of-Rise

>
>

pulse width.

RMS On-State Current, I T(RMS)

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
I

NON-REPETITIVE PEAK
REVERSE VOLTAGE, Vrsm

1.5 milliseconds.

8.3 milliseconds

of On-State Current, Non-Repetitivef

of On-State Current, Repetitivef

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

110 Amperes
1800 Amperes
1700 Amperes
2
9,500 (RMS Ampere) Seconds
2
Ampere)
13,500 (RMS
Seconds
800 A/jxs
500 A/jus
2 Watts

-40C to +150C

Operating Temperature, Tj

-40C to +125C
125-150 In-Lb

Stud Torque

14-17
fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5ms short circuit trigger current rise time.

838

Vdrm;

20

N-m
volts,

C164,C165

CHARACTERISTICS
TEST
Peak Reverse and OffState Current

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNITS

Irrm

12

mA

Tj = +25C,

12

17

mA

Tj = +125C,

0.3

C/Watt

V DRM

V RRM

and

Idrm
Peak Reverse and Off-

Irrm

V DRM

V RRM

and

State Current

Idrm
Thermal Resistance
Critical Rate-of-Rise

of

Rfljc

dv/dt

200

500

V//zsec

Off-State Voltage (Higher

values may cause device
switching)

Junction-to-Case
C
Tj = +125 C, Gate Open. V DRM = Rated
linear or exponential rising waveform.

Exponential dv/dt =
Higher

minimum

dv/dt selections available

^SM

(.632)

consult factory.

Holding Current

Ih

40

1000

mAdc

Tj = +25C, Anode Supply = 24 Vdc.

Initial On-State Current = 2 Amps.

DC

Igt

70

250

mAdc

Tc =

+25C,

100

400

Tc =

-40C,

T c = +125C,

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

VG t

VTM

25

175

1.25

3.0

0.15

1.9

2.6

Vdc

td

Conventional Circuit Cornmutated Turn-Off Time

(with Reverse Voltage)

tq

Faster

Maximum

Turn-Off

0.5

10

15

20

Volts

jitsec

Ohms

= 3

Ohms

= 3

Ohms

to 0C,

T c = +25C,

I TM = 500 Amps. Peak.

<

.01%.

Gate
I T = 50 Adc, VDRM
Supply: 20 Volt Open Circuit, 20 Ohm,
0.1 jusec max. rise timeft, ttt

T c = +25C,

(1)

T c = +125C

(2)
(3)
(4)

TM = 150 Amps.

V R = 50 Volts Min.
VDRM Reapplied

Rate-of-Rise of Reapplied Off-State

Voltage = 200V/jUsec (linear)
(6) Commutation di/dt = 5 Amps/jUsec
(7) Repetition Rate = 1 pps.
=
(8) Gate bias during turn-off interval

Factory

volts,
/usee

tq

(diode)

(1)
(2)
(3)
(4)

CI 64

C165

= 6 Vdc,

= 3

(5)

Times Available, Consult

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

= 6 Vdc,

RL
RL
RL

//sec

C164
C165

2.0

= 6 Vdc,

V D = 6 Vdc, R L = 3 Ohms
T c =0C to +1 25C, VD = 6 Vdc, R L = 3 Ohms
T c = 125C, VDRM R L = 1000 Ohms
T c = -40C

Duty Cycle
Delay Time

VD
VD
VD

15

20

(5)

100 ohms

T c = +125C
I TM = 150 Amps.
V R = 1 Volt
VDRM Reapplied
Rate-of-Rise of Reapplied Off-State
,

Voltage = 200V//isec (linear)

Commutation di/dt = 5 Amps/jUsec
(7) Repetition Rate = 1 pps.
=
(8) Gate bias during turn-off interval

(6)

volts,

100 ohms.

Consult factory for specified maximum turn-off time,

f
drive approaches the IGT f tne Device Under Test,
fj Delay time may increase significantly at the gate
risetime across a non-inductive resistor.
j-j-j- Current risetime as measured with a current probe, or voltage

I
839

C164,C165

4000
3000

111
Stl,

I000

\*^s>
a

20

800
600

^ <*

*X

400
300

10

I25"c/

<i.

wN.

Y* ? c
<

80
60

-"i

OF
^. PO SSIBLE1
DC
\
TR GGER 1
t

40
30

*+S

I00

-*%

"V?"**

2 >C

%'

-^

L2v

^-S&K

9
8

r^

PO

+I25C + 25C

NTSV'

*--^ L DAD LINE

-LOAD LINE
2.0

3.0

4.0

5.0

.2

INSTANTANEOUS ON-STATE VOLTAGE

VOLTS

NOTES:
1

.3

.4

.6

.8

t
1.0

The locus

of possible

3.0 4.0

2.0

INSTANTANEOUS GATE CURRENT

DC trigger

6.0 8.010.0

AMPERES

points

lies

outside the

boundaries shown at various case temperatures.

1.

MAXIMUM ON-STATE CHARACTERISTICS

20

3.

40

60
I00
200
400 600 I000
2000
PULSE BASEWIDTH - MICROSECONDS

4000

2.

40

10,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS

4.

100
200
400 600 1000
2000
PULSE BASEWIDTH - MICROSECONDS

60

4000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)

20,000

40

100
200
400 600 1000 2000
PULSE BASEWIDTH - MICROSECONDS

60

4000

10,000
1.5

PULSE BASE WIDTH- (MILLISECONDS)

5.

ENERGY PER PULSE FOR SINUSOIDAL PULSES

6.

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING
l

840

10,000

C164.C165

u
z
<

a
a.

2C
2*
K(

.1

UiUJ

in
-

Z
UJ
z
<
cc

.001

.01

.1

100

10

TIME (SECONDS)

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

OUTLINE DRAWING
SEATING PLANE

SYM

INCHES
MAX.

MIN.

A
B
C

METRIC

MM

MIN.

MAX.

1.020 1.140 25.90 28.96

.390

1.460

.500

INCHES
MIN
MAX

METRIC
MIN

MM
MAX

98 16.26

.590

.640

.058

.070

.840

.910

21.33 23.1

10.79

14

NOTES

9.90 12.70

REF

l.660| 1.800

SYM.

7 92 REF.

1.47

1.78

42. 16 45.72
1

MODEL

TERMINAL

CI64-2
CI65-2

GATE

TERMINAL

TERMINAL

CATHODE

THREAD

ANODE

REF

.312

.797

.827

.060

.075

.385

.415

.445

.485

.198

.212

2.
3.

1/2-20 UNF-2A

ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT. MATERIAL
OF HARDWARE IS STEEL, CAD PLATED.
"T" DIM. IS AREA OF UNTHREADED PORTION. COMPLETE THDS. ARE
WITHIN 2.5 THREAOS OF SEATING PLANE.
ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.

SYM

SEATING PLANE

INC HES
MIN. MAX.

CI64
CI65

GATE

AUX
CATHODE

ANODE

.499

.060

1.30

12.32

502

5.38

me:RIC

MM
MIN.

SYM

1.52

INC:hes

MET RIC
MM

MAX.

MIN.

NOTES

MAX.

275

325

6.98

1.570 1.750

39.87 44.45

.065

.095

1.65

2.41

6.000 6.390 152.40 162.31

340

.910

21.33

23.11

6.850 7,500 173.99 190.50

.425

.499

10.79

12.67

1.140 25.90 28.96

.797

.827

2024

21.01

.140

.150

3.55

3.81

300

7.62
12.70 15.49

500

.610

.260

281

660

1.052 1.063 26.72 27.00

MIN

MAX.

12.67

.330

lAfeii

CATHODE

.425

1.91

390

152

9.77 10.54

9.90 12.70

1.020

TERMINAL TERMINAL TERMINAL TERMINAL

21.01

.500

A
B

MODEL

REF.

92

SIZE

NOTES:
1.

2024

.920

.060

8.38

23.36

8.26

1.57

1.052 1.063 26.72 27.00

7.14

THREAD SIZE
1/2

20UNF-2A

NOTES:

GATE 8 AUX. CATHODE LEADS SUPPLIED LIGHTLY TWISTED TOGETHER.

2. FLEXIBLE COPPER LEAD.
1.

3 ONE NUT AND ONE LOCKWASHER SUPPLIED WITH EACH UNIT. MATERIAL OF
HARDWARE IS STEEL, CAD PLATED.
"R" DIM IS DIA. OF EFFECTIVE SEATING AREA.
5. "T" DIM. IS AREA OF UNTHREADED PORTION. COMPLETE THDS. ARE
WITHIN 2.5 THREADS OF SEATING PLANE.
6. ANGULAR ORIENTATION OF TERMINALS IS UNDEFINED.
4.

841

High Power
CI 80

Silicon

Controlled Rectifier
1300

AMPLIFYING GATE

235 A RMS

Volts

^t"

The General

Electric CI 80 Silicon Controlled Rectifier is designed for phase

control applications. This is an all-diffused Pic-Pac device, employing the
field-proven amplifying gate.

FEATURES:

High di/dt Ratings

High dv/dt Capability with Selections Available

Excellent Surge and

t Ratings Providing Easy Fusing

Rugged Hermetic Package with Long Creepage Path
I

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM 1

VOLTAGE, V RRM 1

Tj = -40C to +1 25C

Tj = -40C to +125C

TYPE

CI 80 A

100 Volts
200
300
400

C180B
C180C
C180D
C180E
CI 80S

C180N
C180T
C180P
C180PA
C180PB
C180PC
Half sinewave waveform,

200 Volts
300
400
500
600
720
840
950
1075
1200
1325
1450
1550

200
300
400
500
600
700
800
900
1000
1100
1200
1300

msec. max. pulse width.

RMS On-State Current, It(rms)

Average On-State Current, Ij(av)
Peak One-Cycle Surge (Non-Repetitive) On-State Current,

I TSM (60 Hz)

Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)

Critical Rate-of-Rise

235 Amperes (All Conduction Angles)

Depends on Conduction Angle (See Charts)
3500 Amperes
3200 Amperes

800 A/ms
500 A/ms

of On-State Current (Non-Repetitive)*

of On-State Current (Repetitive)*

(for fusing), for times
1.5 milliseconds

Critical Rate-of-Rise
2
I

>

32,000

(RMS Ampere) 2 Seconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pg(av)
Storage Temperature, T stg
Operating Temperature, Tj

10 Watts

2 Watts
-40C to +150C
-40C to +125C

250

Stud Torque

Lb.-In. (Min.)

300

Lb.-In. (Max.)

34 N-m (Max.)

28 N-m (Min.)
*di/dt ratings established in accordance with

20 ohms gate

trigger source

Tj = +125C

100 Volts

500
600
700
800
900
1000
1100
1200
1300

C180M

NON-REPETITIVE PEAK
REVERSE VOLTAGE, Vrsm

EIA-NEMA

with 0.5 jUsec short

Standard RS-397, Section 5.2.2.6 for conditions of

circuit trigger current rise time.

842

Vdrm

stated above; 20 volts,

C180

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

mA

Idrm

Tj = +25C

and

Vqrm

!rrm

C180A
C180B
C180C
C180D
C180E
C180M
C180S

C180N
C180T
C180P
C180PA
C180PB
C180PC
Repetitive Peak Reverse
and Off-State Current

v rrm

10

100 Volts Peak

200

10

10

300

10

400

10

500

10

600

10

700

10

800

900

1000

1100

1200

1300

mA

Idrm

Tj = +125C

and

v drm
-

C180A
C180B
C180C
C180D
C180E

C180M
CI 80S

C180N
C180T
C180P
C180PA
C180PB
C180PC

20

100 Volts Peak

20

200

15

20

300

15

20

400
500

15

20

15

20

600

15

20

700

15

20

800

15

18

900

12

15

1000

11

14

1100

10

13

1200

11

1300

.14

.12

Critical Rate-of-Rise of
Off-State Voltage. (Higher
values may cause device
switching.)

dv/dt

200

500

Ih

minimum

C/Watt

Junction-to-Case

V/jisec

Tj = +125C, V DRM = Rated Using Linear

or Exponential Rising Waveform, Gate
Open Circuited. Exponential dv/dt = (.632)

dv/dt selections available

75

500

mAdc

consult factory.

T c = +25C, Anode Supply = 24 Vdc.

Initial

td

"

Gate Pulse Width

Necessary to Trigger

v rrm

15

R0JC

Higher

15

Thermal Resistance

Turn-On Delay Time

Irrm

Holding Current

TEST CONDITIONS

UNITS

10

On-State Current

2.5

Amps.

/usee

T c = +25C, I T = 100 Adc, V DRM = Rated

Gate Supply: 10 Volt Open Circuit, 25
Ohm, 0.1 jusec max. rise time.

jusec

T c = 25C, Gate Supply: 20 Volt Open Circuit, 40 Ohm, .5 jusec rise time. If = 1 Amp.
For High di/dt Capability, See Chart

DC

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

Igt

Vgt

Vtm

100

150

200

1.25

3.0

0.15

2.3

2.85

mAdc

125

Tc = +25C, V D =
T c = -40C, V D =
T c = +125C, V D =

Ohms
Ohms
6 Vdc,
3 Ohms
+125C, V D = 6 Vdc, R L =
6 Vdc,

6 Vdc,

Vdc

T c = -40C to
3 Ohms
T c = +1 25C, VD = Rated, R L = 1 000 Ohms

Volts

T c = +25C, I TM = 1500 Amps. Peak

Duty Cycle

843

RL =
RL =
RL =

7.

<

0.01%

C180

SINUSOIDAL WAVEFORM
1

25

I40
I

50 TO 400 CPS

U|20
I0O

a
u
a.

UIOO

80

90*

I20*

I80

u
CO
<

*
80 _DUT
CYCl.E.oA3% 2.5%^

25%

13%

50%

100%

60
60

s 40
40

s
2
X

20

<
2

40
80
20
AVERAGE ON -STATE CURRENT
1

1.

60

240

200

20

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

40
60 80
100
120
140
160
180
200 220 240
AVERAGE ON -STATE CURRENT -AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

.10,000

3500

3000

2
u*3 2500

II

TJ

I25 # C

2000

1500

3?
1000

i
500

INSTANTANEOUS ON - STATE

4
6
8
10
CYCLES AT 60 CPS

VOLTAGE DROP-

MAXIMUM ON-STATE CHARACTERISTICS

20

60

40

HZ.

MAXIMUM ALLOWABLE SURGE (NONREPETITIVE ON-STATE CURRENT RATING

"360

100%/
DC

320

280

50 TO 400 CPS

50%

5280

240
180

2-240
12

200

160

90*

CONDU
ANGLE

30J

1?

160

60

DUTY CYCL E

120

80

80

40

80
120
AVERAGE ON-STATE CURRENT

160
-

200

240

'/^/y^
50 TO 40 3 CPS

40
6.

844

AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

5%

/M

40

g 40
<

?*%/

200

120

5.

33%

120
80
AVERAGE ON- STATE CURRENT

200
AMPERES

160
-

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

240

C180

NOTES:
Maximum
1.
2.

allowable gate power dissipation = 2 watts.

The locus of

3.

.6

.8 1.0

4.

6.

7.

shown

trigger points

lie

outside

at various case temperatures.

rectangular gate current pulse width.

40 60 80100

20

8. 10

INSTANTANEOUS GATE CURRENT

Tp =

DC

possible

the boundaries

AMPERES

GATE TRIGGERING CHARACTERISTICS

:i600
50 TO 400 CPS
1

1200

1400

\eo/

\zoy

:i200

<a

1000

60"/
CONDUC TION
AN(3LE -

800

30^

?//

33%/

1000

//

/
12.5%/
1

//

8 00

600

600
*0

am

r.P*

" 400
200

200

400
200
300
500
AVERAGE ON -STATE CURRENT - AMPERES

"0

600

100

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

8.

9.

(EXTENDED RANGE)

200
400
600
AVERAGE ON-STATE CURRENT - AMPERES

800

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM
(EXTENDED RANGE)

80
% o60
1

jj?

* o

8x40

so

J JNCTION

820

TEMPE RATI RE

8 LOCKING VOLT/ GE

I2J

'

"^

OUO
Ul

"^^^^-

Kn

-IU

CO

B.U

I
1

'1

10
/
TIME -SECONDS

0.1

10

PULSE WIDTH- MILLISECONDS

10.

SUB-CYCLE SURGh IIMUN-REPETITIVE)

CURRENT RATING FOLLOWING
ON-STATE RATED LOAD CONDITIONS

11.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

845

100

C180
I000

800
600

^r

-^
<7^

400
'

200

I00

80
60

=tttrt=

1 p=<HJUA

-J\
r

**
s*

'j'

400A

IOC>A
i-

I00A

'j- 125

40

^200A

"C

'"

iV C

CI80 MAXIMUM RECOVERED CHARGE

SIMULATED TRAPAZOIDAL WAVEFORM)

10

...

6 8

10

REVERSE

2
di/dt

6 8 I00

(AMPERES

//i

SEC)

MAXIMUM RECOVERED CHARGE

12.

OUTLINE DRAWING

SEATING PLANE
SYM.
(DIA.)

I.450

.500

TERMINAL TERMINAL TERMINAL TERMINAL

MODEL
CI80

AUX.

CATHODE

ANODE

CATHODE

CI8S

CI86

GATE

THREAD
3/4- 16

SIZE

UNF-2A

Gate and auxiliary

twisted together.

cathode

2.

Flexible copper lead.

3.

One nut and one lockwasher

Material of hardware

4.

"T" dimension

is

is

steel,

leads

supplied

Angular orientation of terminals

is

39.37

437

MAX.

11.09

.325

.360

8.25

914

2.300 2.500

58.42

6350

.093

.125

2.36

3.18

1.060

1.100

26.92 27.94

.660

.749

16.76

I.047

1.077

2659

2736

.140

.150

3.55

3.81

.215

.300

5.46

762

.530

.687

1346

1745

.322

.333

8.17

8.46

846

MIN.

19.05

MAX.

12.70

8.100 18669 20574

undefined.

MIN.

.750

8.100 186.69 20574

Com-

(MM)

1.550 36.83

7.350

lightly

METRIC

INCHES

NOTE SYM.

MAX.

7.350

plete threads are within 2.5 threads of seating plane.

5.

METRIC
(MM)
MIN.

supplied with each unit.

cad plated.

area of unthreaded portion.

MAX.

NOTES:
1.

INC 4ES
MIN.

1.240

.156

1.250

31.49

NOTE

19.02

3.96

3L75

High Power

C180X500

Silicon

Controlled Rectifier
300ARMS

800 Volts

AMPLIFYING GATE

Electric CI 80X500 Silicon Controlled Rectifier is specifically

designed for low voltage phase control applications; e.g., welding, battery
charging, plating supplies, etc. The SCR has very low power dissipation,
thereby giving high current capability on free convection, air-cooled

The General

heatsinks.

FEATURES:

Low

Excellent Surge and

High di/dt Ratings

High dv/dt Capability with Selections Available

Rugged Hermetic Package with Long Creepage Path

On-State Voltage
2
I

Ratings Providing Easy Fusing

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM 1

VOLTAGE, V RRM 1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM 1

Tj = -40C to +125C

Tj = +125C

TYPE

Tj = -40 C to +125C

C180AX500
C180BX500
C180CX500
C180DX500
C180EX500
C180MX500
C180SX500
C180NX500
1

100 Volts
200
300
400
500
600
700
800

600
700
800

Half sinewave waveform, 10 msec. max. pulse width.

RMS On-State Current, Ij(rms)

Average On-State Current, It(av>
Peak One-Cycle Surge (Non-Repetitive) On-State Current,

I TSM (60 Hz)

Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)

Critical Rate-of-Rise of On-State

Critical Rate-of-Rise
2
I

200 Volts
300
400
500
600
720
840
950

100 Volts
200
300
400
500

Current (Non-Repetitive)*

of On-State Current (Repetitive)*

(for fusing), for times

>

1.5 milliseconds

300 Amperes (All Conduction Angles)

Depends on Conduction Angle (See Charts)
5500 Amperes
5000 Amperes
800 A/jus
500 A/yus
2
75,000 (RMS Ampere) Seconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)
Storage Temperature, T stg
Operating Temperature, Tj

10 Watts
2 Watts
-40C to +150C

-40C to +125C

Stud Torque

250

Lb.-In. (Min.)

300

Lb.-In. (Max.)

34 N-m (Max.)

28 N-m (Min.)

EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of

with 0.5 Msec short circuit trigger current rise time-

*di/dt ratings established in accordance with

20 ohms gate

trigger source

847

VrjRM

stated above:

20

volts,

C 180X500

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Current

Idrm

C180AX500
C180BX500
C180CX500
C180DX500
C180EX500
C180MX500
C180SX500
C180NX500

!rrm

MIN.

TYP.

MAX.

UNITS

TEST CONDITIONS

mA

Tj = +25C

and

Repetitive Peak Reverse

and Off-State Current

!drm

C180AX500
C180BX500
C180CX500
C180DX500
C180EX500
C180MX500
C180SX500
C180NX500

!rrm

10

100 Volts Peak

10

200

10

300

10

400

10

500

10

600

10

700

10

800
Tj = +125C
= V
V

DRM

RflJC

Critical Rate-of-Rise of

dv/dt

200

100 Volts Peak

15

20

200

15

20

300

15

20

400

15

20

500

15

20

600

15

20

700

15

20

800

.12

.14

500

C/Watt

Junction-to-Case

V/jUsec

Tj = +125C, Vo R m = Rated Using Linear

or Exponential Rising Waveform. Gate Open
Circuited. Exponential dv/dt = (.632)

dv/dt selections available

75

500

mAdc

consult factory.

T c = +25C, Anode Supply

Initial

Turn-On Delay Time

td

Gate Pulse Width

Necessary to Trigger

DC

DC

Gate Trigger Current

Gate Trigger Voltage

10

= 24 Vdc.
On-State Current = 2.5 Amps.

jusec

T c = +25C, I T = 100 Adc, VDRM = Rated

Gate Supply: 10 Volt Open Circuit, 25
Ohms, 0.1 /Usee max. rise time.

jusec

T c = 25C, Gate Supply: 20 Volt Open

40 Ohms, 5 /isec rise time. I T =
For High di/dt Capability, See Chart
cuit,

Igt

Vgt

+25C,

200

Tc =

-40C,

125

T c = +125C,

VD
VD
VD

T c = -40C

+125C,

150

1.25

mAdc

Tc =

100

3.0

Vdc

RL
0.15

Peak On-State Voltage

20

minimum

RRM

15

Off-State Voltage. (Higher values may cause

device switching.
Higher

and

Ih

V RRM

mA

Thermal Resistance

Holding Current

VDRM
-

VTM

1.75

848

= 6 Vdc,
= 6 Vdc,

T c =+125C, V D =
Volts

VD

RL
RL
RL

= 3
= 3
= 3

Cir-

Amp

Ohms
Ohms
Ohms

= 6 Vdc,

Ohms
Rated,

T c = +25C, I TM =
Duty Cycle

to

= 6 Vdc,

<

0.01%.

RL =

1000

900 Amps Peak.

Ohms

CI 80X500

SINUSOIDAL WAVEFORM

400

!D0
200
AVERAGE ON-STATE CURRENT

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

2.

1.

I80>
et

><&r

Conduct Ion A igle=30

g
<2

"iorasa

80
60

o
a

a.

. 162/5^

PERCENT DUTY CYCLE*BV^J

80

a:

/'

60

'

/a

40

50

V)
5 200
e
u
* 100

yO^S

100

"

33^4

1 400

200

TOO

800
600

b 800

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

1000

"000

600
400

300

200

100

AVERAGE ON-STATE CURRE NT - AM PERES

/i

40

>

20

20

Id

10
1

i>0

to

8C)I00

2 X)

6<30

4CX)

800

10
10

1<

20

AVERAGE ON-STATE CURRENT -AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

4.

40
60 BO 100
200
400 6008001000
AVERAGE ON-STATE CURRENT-AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

1400
1200
1000
i_

800
600
400
200
Ti

100

-T]= 25<

125 c
~"i!

80
60

40
20

.4

.6

.8

LO

1.2

1.4

1.6

1.8

1.0

2,2 2.4

2.6

INSTANTANEOUS ON- STATE VOLTAGE -VOLTS

5.

MAXIMUM ON-STATE CHARACTERISTICS

849

2.8

'

ioo

CI 80X500

fc

^?

60

</>

,7c;

V*

40

2.

The

allowable gate power dissipation = 2 watts.

locus of possible

the boundaries
3.

Tp

DC

shown

at

v.-*

v -- %v
VK

^>20V, 2on

i*

\'^^

to

GATE TRIGGERING CHARACTERISTICS

JNE AT
rp

y-. o

2
6.

L.

= rectangular gate current pulse width.

^\4%.^

TS
jV^
^
j__ 'ov +^

to

10

trigger points lie outside

various case temperatures.

<*

*\J

i
NOTES:
1.
Maximum

*%

80

di/dl

>

100

5^cSEq MIN
1

AMP/^S

0.5 /i

MMINIMUM
,

TP =5SEC MIN

.6

.8 1.0

4.

IOuSEC MAX

'

6.

8
6

.V

$ 100

40 60 80 IOO

AMPERES

IU

RISE TIME

20

10

INSTANTANEOUS GATE CURRENT

??200

20V, 65 Si IS
GATE SOURCE LOAD
LINElATdi/dK 100 AMP/^iS 1
1

OJ

it

LlMlT

SEC MAX RISE TIME

Xr

o 2
<
a
Z 0.B
,

-0.6
<0.4

-(

IT

0.2

t 0I
W.08

06

It
t

5.04
1-

.02

.01

.001

PULSE TIME- MILLISECONDS

.01

0.1

100

10

1.0

TIME -SECONDS

SUB-CYCLE SURGE (NON-REPETITIVE)

TRANSIENT THERMAL IMPEDANCE -

CURRENT RATING FOLLOWING

ON-STATE RATED LOAD CONDITIONS

JUNCTION-TO-CASE

OUTLINE DRAWING
SEATING PLANE
SYM.

INC HES
MIN.

R
A

1.450

.500

MAX.

METRIC
(MM)

(MM)

MAX.

1.550 36.83

39.37

437

MIN.

MAX.

MIN.

MAX.

11.09

.750

12.70

19.05

.325

.360

8.25

914

2.300 2.500

58.42

6350

.093

.125

2.36

3.18

7.350

8.100 186.69 20574

1.060

1.100

26.92 27.94

7.350

8.100 18669 20574

.660

.749

16.76

1.047

1.077

26.59

2736

.140

.150

3.55

3.81

.215

.300

5.46

762

.530

.687

1346

1745

.322

.333

8.17

6.46

1.240

.156

1.250

NOTES:
1.

Gate and

auxiliary

cathode

leads

supplied

"T" dimension is area of unthreaded portion. Complete threads are within 2.5 threads of seating plane.

lightly

twisted together.

2.

Flexible copper lead.

One nut and one lockwasher

supplied with each unit.

Material of hardware

cad plated.

5.

is

steel,

850

METRIC

INCHES

NOTE SYM.

MIN.

Angular orientation of terminals

is

undefined.

3149

NOTE

19.02

3.96

31.75

HIGH SPEED
I

Silicon Controlled Rectifier

0184,0185

300A RMS

800 Volts

The General Electric CI 84 and CI 85 Silicon Controlled Rectifiers are depower switching at high frequencies. These are all-diffused Pic
Pac devices, employing the field-proven amplifying gate.

signed for

FEATURES:

High di/dt Ratings.

High dv/dt Capability.
2
Excellent Surge and I t Ratings Providing Easy Fusing.
Guaranteed Maximum Turn-Off Time with Selections Available.
Rugged Hermetic Package with Long Creepage Path.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM 1

VOLTAGE. V RRM 1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V BSM 1

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

100 Volts

100 Volts
200
300
400
500
600
700
800

200 Volts
300
400
500
600
720
840
960

TYPES

C184/C185A
C184/C185B
C184/C185C
C184/C185D
C184/C185E
C184/C185M
C185S

200
300
400
500
600
700
800

C185N
Half sinewave waveform, 10

RMS

ms max.

pulse width.

On-State Current,

Critical Rate-of-Rise

I T (rms)
of On-State Current, Non-Repetitivef

Critical Rate-of-Rise of On-State Current, Repetitive!

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITS m ( 50 Hz)
2
I

(for fusing) for times

(for fusing) for times

>
>

1.5 milliseconds

8.3 milliseconds

30 Amperes
800 A//iS
500 A//is
3500 Amperes
3200 Amperes
2
35,000 (RMS Ampere) Seconds
2
50,000 (RMS Ampere) Seconds
2 Watts
-40C to +150C

Average Gate Power Dissipation, Pg(av)

Storage Temperature, T stg

-40C to +125C
300 Lb-In (Max.), 250 Lb-IN (Min.)
34 N-m (Max.), 28 N-m (Min.)

Operating Temperature, Tj

Stud Torque

fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
wo ohms gate trigger source with 0.5ms short circuit trigger current rise time.

851

Vqrm;

20

volts,

C1 84, CI 85

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Current

MIN.

TYP.

MAX.

UNITS

10

mA

Tj = +25C,

VDRM

VRRM

15

20

mA

Tj = 125C,

VDRM

VRRM

.15

C/Watt

!rrm

TEST CONDITIONS

and

Idrm
Repetitive Peak Reverse
and Off-State Current

Irrm
and
j

drm

Thermal Resistance

Rejc

.12

Critical Rate-of-Rise of

dv/dt

200

500

V//xsec

Off-State Voltage (Higher

values may cause device
switching)

Tj = +125C, Gate Open. VDRM = Rated,

linear or exponential rising waveform.

minimum

dv/dt selections available

Ih

75

!gt

125

300

175

500

100

250

5.0

3.0

0.15

2.3

2.85

500

mAdc

DC

Gate Trigger Current

Gate Trigger Voltage

Vgt

mAdc

(.632)

consult factory.

T c = +25C, Anode Supply = 24 Vdc.

Initial

DC

DRM

Exponential dv/dt Higher

Holding Current

Junction-to-Case

On-State Current = 2.5 Amps.

T c = +25C, V D =

6 Vdc,

RL

= 3

Ohms

Vdc

-40C, V D = 6 Vdc, R L = 3 Ohms

T c = +125C, V D = 6 Vdc, R L = 3 Ohms
T c =-40C to 0C, VD = 6 Vdc, R L = 3 Ohms

Volts

T c = 0C to +1 25C, VD = 6 Vdc, R L = 3 Ohms

T c =+125C, VDRM R L = 1000 Ohms
T c = +25C, I TM = 1 500 Amps Peak.

Tc =

Peak On-State Voltage

VTM

Duty Cycle
Turn-On Delay Time

td

"

Msec

Voltage)

tq

C184
C185

Msec

(1)

(2)

8
15

10

(3)

20

(4)

Conventional Circuit

Diode)

//sec

(diode)

20

=250 Amps.

(6)

Commutation di/dt =
Duty Cycle < .01%.

12.5 Amps/jUsec.

(8)

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms.

(1)

T c =+125C

(2)

10

Ixm

VR = 50 Volts Min.
VDRM (Reapplied)
Rate-of-Rise of Reapplied Off-State
Voltage = 200 V/jzsec (linear)

Ijm = 250 Amps.

VR =
vdrm

Volt
(Reapplied)
(5) Rate-of-Rise of Reapplied Off-State
Voltage = 200 V/Msec (linear)
(6) Commutation di/dt = 12.5 Amps/jUsec.
(7) Duty Cycle
.01%.
(3)

C184
C185

max. Rise Time.

T c =+125C

(5)

(7)

Commutated Turn-Off
Time (with Feedback

.01%.

T c = +25C, I T = 50 Adc, VDRM Gate

Supply: 20 Volt Open Circuit, 20 Ohm,
0.1 Msec

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

<

(4)

<

(8)

(Consult factory for

maximum

turn-off time

852

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms.


WAVE CURRENT RATING DATA

SINE

C1 84, CI 85

M >.

ES F>ER SECOND

ft*

&V^2T

It'""

i%
>

4000
400 600 I000
2000
200
PULSE BASE WIDTH - MICROSECONDS

10,000

0 0 00

40

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 65 C)

>UL

Ma.

&

Vr>

k
^

NOTES:

^v

(Pertaining to Sine

2000 4000
400 600 1000
200
60 80100
PULSE BASE WIDTH - MICROSECONDS

40

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)
and Trapezoidal Wave Current Ratings)

< 400

1.

Switching voltage

2.

RC

3.

Reverse voltage

4.

Values of W-S/D are for Tj = 125C.

Snubber

.22jif,

Vr

volts.

5 ohm.

^ 400 volts.

10,000

^^ ^^

oou
900
800
700
600
500
400

^OWATT
>ER

300

<

^
^0

200

'5

C5I

150
5

Q * J)2

80
70
60

D075~"
005^

40
30
20
lb

3.
in

15

20

30 40 5060 80 100

10000

1000

PULSE WIDTH-MICROSECONDS

853

ENERGY PER PULSE FOR

SINUSOIDAL PULSES

C184,C185

TRAPEZOIDAL WAVE CURRENT RATING DATA

DUTY CYCLE-50%

DUTY CYCLE-25%

000
800

800

LSEs p

j
=

ULSE S

P:r

sec OND

60

400

.=

"

r.

400

300

60

400
-

I0OO

I000

200

80 I00

60

20

30

40

60

80 I00

AMPERES PER MICROSECOND

AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65 C)
1

10

RATE OF RISE OF ON-STATE CURRENT

RATE OF RISE OF ON-STATE CURRENT

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65 C)
I0OO

000
to

800

800

a.

600

600

f"LSES PFB

I-

S
cc
3

400

PULSES

P"R SEC OND

60 --

300

...

CONC

_60

400

400

300

LU

<K>

)00

IC

200

200

IC)0(

10

20

30

40

60

10

I00

RATE OF RISE OF ON-STATE CURRENT

AMPERES PER MICROSECOND
5.

20

30

40

60

80 I00

RATE OF RISE OF ON-STATE CURRENT

AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 90C)

854

WATT-SECOND PER PULSE

C184,C185

20

800

600
500

400

80 100
400 600 800 IK
PULSE BASE WIDTH-MICROSECONDS

ENERGY PER PULSE

AND PULSE WIDTH

8.

1000

40 5060

30

0.Z5
1

">

c^iTSsf

,0.4

0.18..

(di/dt =

^v

0.14,^
*<

^08

4K 5K 6K

3K

100

A/jusec.)

WATT -SEC /PULSE

a^V

"^

OJ**

8K IOK

PEAK CURRENT

VS.

0.16.*

2K

s >
s \s

^O06
_O04
0.03

0.02

di/dt

'

25AMPS//iSEC

till
20

30

40 SO 60

80 100
400 600 800 IK
PULSE 8ASE WIDTH-MICROSECONDS

2K

4K SK 6K

3K

8K IOK

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 25 A/jusec.)

9.

1000

BOO

o$^

^5

WATT-SEC /PULS E

oiiOs,
2^C^.

500
014

400

^SN

300

0.C s"*

| 200

3.0

0.03

%
o
w

too

"V

&0I5

80
0.01

<
w
i

60

40

a!

30

V V,

0.02

N
v

0.1

v,

'

SJ

c; ^

^
^
^

S
S

^o^ izj ^

50

<

20
di/dt

20

10.

30

40 5060 BO I0O

400 6O0 800 IK

PULSE BASE WIDTH -MICROSECONDS

ENERGY PER PULSE

AND PULSE WIDTH

VS.

5 AMPS/ftSEC

3K

4K 5K 6K

PEAK CURRENT

(di/dt

855

2K

,1111

= 5 A/Msec.)

SK IOK

.2

INSTANTANEOUS ON STATE VOLTAGE

.4

.5 .6

.8

1.0

3
-

AMPERES

VOLTS
12.

11.

.3

INSTANTANEOUS GATE CURRENT

MAXIMUM ON-STATE CHARACTERISTICS

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

220,000

5 6

10

20

30 40

NUMBER OF CYCLES AT 60 Hz
13.

PULSE WIDTH

SURGE (NON-REPETITIVE) ON-STATE CURRENT

14.

4
5
6
MILLISECONDS

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATINGS
l

.20

q:
uj

.15

o
z
<
a
UJ
a.

.10

s
a:
ui

.05

UJ
to

5
l(

DO

10

MILLISECONDS

SECONDS
TIME

15.

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

856

C184,C185

C185

RECOVERED CHARGE DATA

30

500
400
300

20

200
00
1

AMPERES
10

6
5

4
3

AMPERES

0.8

U.5

0.3

'I

REVERSE
16.

di/dt

10

20

30 405060 80 I00

(AMPERES/^ SEC)

>

REVERSE

TYPICAL RECOVERED CHARGE DATA AT 25C

17.

30 40 50 60

20

10

di/dt (AMPERES//J.

SEC)

80 I00

TYPICAL RECOVERED CHARGE DATA AT 125C

SINEWAVE CURRENT WAVEFORM

SINEWAVE CURRENT WAVEFORM

OUTLINE DRAWING

MIN.

A
B

TERMINAL TERMINAL TERMINAL TERMINAL

MODEL
CI80

CI86

CI85

GATE

AUX.

CATHODE

ANODE

CATHODE

THREAD
3/4-I6

SIZE

UNF-2A

METRIC
(MM)

INCHES

SYM

MAX.

MIN.

NOTE SYM.

MAX.

INCHES

ME1rRic
(M M)

MIN.

437

MAX.

MIN.

MAX.

11.09

450 1.550 36.83 39.37

.500

.325

.360

8.25

914

.125

2.36

3.18

1.

.750

12.70

19.05

58.42

2.300 2.500

6350

.093

7.350

8.100 186.69 20574

1.060

1.100

26.92

2794

7 350

8.100 186.69 20574

.660

.749

16.76

19.02

I.047

1.077

2659

2736

.140

150

3.55

3.81

.215

.300

5.46

762

.530

.687

1346

1745

.322

.333

8.17

8.46

1.240

.156

1.250

31.49

3.96

NOTE

31.75

857

Silicon

C203
Controlled Rectifier
SEMICONDUCTORS

0.8A

RMS

UP TO 400 VOLTS

TYPICAL APPLICATIONS:

Sensors

Controls

Temperature

Small Motors

Pressure

Small Lamps

Dryness

Remote

Proximity
Switching

Voltage

Amplifiers (gate)

Timers

Solid-State Relay
Relay Driver
Counter
Low Power Inverter

Logic Circuits

120V AC

Current

1-CATHODE

-GATE
SEATING PLANE

Line Operation

INCHES
MAX.

SYMBOL

MIN.
.0

.0

.17 5

b2

FEATURES:

nA

200

Low

.0

9 5

.0

4 5

.13 5
.50

Li

1-2

30 through 200 Volt Selection

Plastic TO-92 Package

6
6

1
J

8-Amp Surge

.2

.0 2
.0

.2

.0

.2 5

.1

.08

.4

07

.4

4 9 6
3 9 4
2 4 2

9
2.6 6

1.15

1.39

5 5

3.4 3

12.70

6.3 5

.10 5

2 9 3

2.4 2

1.

2.

High dv/dt

3.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM <1>

VOLTAGE. V DRM <2>

T c = -65C

Tc =

to

+125C

30 Volts
60 Volts
100
200
300
400

C203B
C203C
C203D
1

RgK =

Values apply for zero or negative gate voltage only.

-65

30
60
100
200
300
400

Volts
Volts
Volts

Volts

to

+125 C

Volts
Volts

Volts
Volts

Volts
Volts

1000 ohms maximum.

RMS On-State Current, Ij(rms) ( all Conduction Angles)

Peak One Cycle Surge (non-rep) On-State Current, Ixsm
Peak Gate Power Dissipation, P GM
Average Gate Power Dissipation, Pg(av)
Peak Positive Gate Current,

Peak Negative Gate Voltage,

Storage Temperature, Tgxc

.5

33

1,3

.4

8 2

5.2
4.

1.2 7

1.3

3
3

2.6 6

THREE LEADS.
CONTOUR OF THE PACKACE BEYOND THIS ZONE IS
UNCONTROLLED.
(THREE LEADS! *b2 APPLIES BETWEEN L, AND L2.
+b APPLIES BETWEEN L2 ANO .5 INCH (12.70 MM)
FROM SEATING PLANE. DIAMETER IS UNCONTROLL
IN Lj AND BEYOND. 5 INCH (12.70 MM FROM SEATIN
PLANE.

C203Y
C203YY
C203A

NOTES

NOTES:

VF

TYPE

MAX.
3 3

5.

5
5

.1

.0

MILLIMETERS
MIN.

4 5 8

.125 .16

Gate Sensitivity

.17

A
*b

3-ANODE

0.8
8.0

Amperes
Amperes

.1.0 Watts for 8.3 msec.

0.01 Watts

GM
V GM

0.5

Amperes
8 Volts

-65C to +150C

Operating Junction Temperature, Tj

-65C to +125C

858

C203

CHARACTERISTICS
TEST
Peak Reverse and OffState Current
(All Types)

DC

Gate Trigger
Current

SYMBOL

MIN.

TYP.

MAX.

UNITS

Irrm

1.0

MA

TEST CONDITIONS

Tc = +25C, RGK = 1000 ohms

Idrm

50

Igt

200

Gate Trigger

V GT

/LtAdc

Vdc

Tc = +25C,

Tc

= -65C, V D = 6Vdc,
= 100 ohms.

Tc

RL
0.1

V TM

1.5

Voltage

Critical Rate-of-Rise

Ih

dv/dt

5.0

10.0

20

mAdc

Commutated

15

= 6Vdc,

V DRM

= 1000 ohms.

msec, wide pulse, Duty Cycle

< 2%

Anode source voltage = 12Vdc,

RGK = 1000 ohms. Tc = +25C.

V/jusec

T c = +125C, Rated

Rgk
tq

VD

T c = -65C

of Off-State Voltage
Circuit

-65C,

= 100 ohms.

Tc =+25C, I TM = l.OApeak,
1

Holding Current

= +25C, V D = 6Vdc,
= 100 ohms.

Tc =+125C, Rated

RL
Peak On-State

= 6Vdc,

= 100 ohms.

Tc =

1.0

VD

RL

RL

Voltage

= Rated Value.

= +125C, R GK = 1000 ohms

Vrrm = V DRM = Rated Value.

500

0.8

V DRM

Tc

RL
DC

Vrrm

or

/usee

Turn-Off Time

V DRM

= 1000 ohms.

Tc

= +125C, rectangular current

waveform. Rate-of-rise of current
<10A/Msec. Rate reversal of current
<5A//usec. I TM = 1A (50/isec. pulse).
Rep. Rate = 60 pps. V RRM = Rated,
V RX = 15V Min., V DRM = Rated.
Rate-of-rise of reapplied off-state
voltage = 20V/jusec.; Gate Bias =

Volts,

100

Ohms

(during turn-off

time interval).
Steady-State

Rfljc

125

C/W

Junction-to-case (flat side of case

is

temperature reference point).

Thermal Resistance

R0JA

230

Junction-to-ambient (free convection).

I
859

C203

TYPICAL CHARACTERISTICS

NOTES

UJ

JIMcno N

rEM PER TU
+1 5*<

1.

2.

*>

JUNCTION TEMPERATURE

FREQUENCY

50 TO 400

+1

!5*C

Hz.

DC

1
Z
K.
X.

*-+ 25' c

180*

3 n,
'20*

90*

80^

o
3

-cot
01

A NGLE

30

z
<
z
4

<\

0'

II

0"

"

v< ONDUCTION
(

1.

03

0.2

INSTANTANEOUS ON- STATE VOLTAGE -VOLTS

0.4

AVERAGE ON-STATE

MAXIMUM ON-STATE CHARACTERISTICS

2.

0.5

0.6

CURRENT- AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

NOTES! I.RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hi

2.RATINGS DERIVED FOR 0.01 WATT AVERAGE
GATE POWER DISSIPATION.
3. CASE TEMPERATURE MEASURED AT CENTER OF
FLAT SIDE OF DEVICE BODY.

0.4

0.5

0.6

0.2

AVERAGE ON-STATE CURRENT -AMPERES

3.

AVERAGE ON-STATE

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

0.3

0.4

CURRENT -AMPERES

MAXIMUM ALLOWABLE AMBIENT TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

I
860

C203

TYPICAL CHARACTERISTICS
N(>tes;

RESISTIVE OR INDUCTIVE LOAD. 50 TO 400 Hz.

RATINGS DERIVED FOR 0.01 WATT AVERAGE
GATE POWER DISSIPATION.
3. UNIT MOUNTED IN CENTER OF SQUARE OF
1.

2.

EPOXY ADHESIVE. FLAT SIDE OF UNIT AGAINST

HE ATS INK.
1

FROM

UNIT.

Ill

II!

NOTE

SINUSOIDAL CURRENT WAVE FORM.

5.

PRIOR TO SURGE

-65*C TO +I25*C

ONDU CTIO 4
NGLE -30-

BO"'

90*

-/
0*

12 0"

180
5

IBO'

I
c

DNDLK T10N

ANGL

.1

G .4

< .3

40

AVERAGE ON-STATE CURRENT-AMPERES

5.

60

100

CYCLES AT 60 Hi

MAXIMUM ALLOWABLE SURGE (NON-REP)

ON-STATE CURRENT

TYPICAL CURRENT CARRYING CAPABILITY

1/16"
FOR DEVICE MOUNTED ON 1 x 1
ALUMINUM HEATSINK

100
1

80

NOTES

1.

II II

TEMPERATURES INDICATED ON CURVES -

60
2 ANODE SUPPLY VOLTAGE3.

40

12 VOLTS DC.
CAUTION OFF-STATE VOLTAGE RATING
(V DRM ) DOES NOT APPLY FOR GATE TO
CATHODE RESISTANCE GREATER THAN
1000 OHMS.
:

J"*X AT
*"^

fe
<fj
""-4+e
r

j !&4r
"C

&
_s

s?>

0.8

^>f.
fA'+

0.6

'^A-

"^Sfr.r^
N*>
5).

FREE AIR R EF1 :r*

FRE E COM VE

IT

AME IENT.

v.

0001 0.002 0.004

0.01

0.02

O04

0.1

TIME

7.

0.2
IN

200

0.4

SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

400 800 800 IK

2K
4K
GATE TO CATHODE RESISTANCE - OHMS

5.

For reference only, units are not available

8K IOH

MAXIMUM AND MINIMUM HOLDING CURRENT

VARIATION WITH GATE TO
CATHODE RESISTANCE

Chart

6K

in this configuration.

861

Silicon

C220

Controlled Rectifier

C222

10 A

The

RMS

25-600 Volts

Controlled Rectifier C220/C222 is a reverse blocking triode thyristor. This

hermetically sealed device which incorporates General Electric's patented POWERprocess that improves upon normal pellet passivation techniques. It provides an
intimate bond between the silicon chip and the glass coating. The resulting stable, low-level
Silicon

SCR is a
GLASTM

leakage current provides excellent performance and demonstrated reliability.

FEATURES:

SIX BASIC

POWER-GLASTM

Very low

Excellent surge current capability.

passivated silicon chip for

off-state (leakage) current at

RMS

maximum

room and

1800 Volts

Attractive pricing for applications requiring

surge isolation voltage

on

reliability.

elevated temperatures.

isolated SCR's.

medium power

devices.

PACKAGES

Other packages available upon request.

PRESS-FIT

ISOLATED STUD

ISOLATED

With Press-On

TO-3

Anode Terminal

TYPE
NON-ISOLATED

STUD

FLANGE

TYPE 4

ISOLATED STUD

NON-ISOLATED

With Solder Ring

Anode Terminal

TO-3

FLANGE

I
TYPE

TYPE

862

TYPE 5

C220/C222

MAXIMUM ALLOWAEJLE RATINGS

VOLTAGE RATINGS
U
VOLTS

VOLTS

VOLTS

c
VOLTS

VOLTS

VOLTS

VOLTS

VOLTS

25

50

100

200

300

400

500

600

TEST CONDITIONS

VD rm Vrrm

Repetitive Peak Off-State Voltage (1,3)

Repetitive Peak Reverse Voltage

T c = -40C
75

35

300

150

400

600

500

720

RMS On-State Current, I T (rms)

Average On-State Current, Ij(av)
Critical Rate-of-Rise

VRSM

to

100C

Non-Repetitive Reverse Voltage (1,2)

T c = -40C

100C

to

10 Amperes (All Conduction Angles)

Depends on Conduction Angle (See Charts 1 and 2)

of On-State Current, di/dt

(See Chart 9)

(4)

100 Amperes Per Microsecond

50 Amperes Per Microsecond

Gate triggered operation Switching from 200 Volts

Switching from 500 Volts

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM 50 Hz
Peak One Cycle Surge (Non- Repetitive) On-State Current, I TSM 60 Hz
t

(for fusing) for times at 8.3 milliseconds

(See Chart 11)

82 Amperes
90 Amperes
34 Ampere 2 Seconds

(for fusing) for times at 1.5 milliseconds

(See Chart 11)

2
27 Ampere Seconds

2
I

2
I

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)
Peak Positive Gate Current,
Peak Positive Gate Voltage,
Peak Negative Gate

5 Watts for 10 Microseconds

0-5 Watts

(See Chart 6)

GM
VGM
Voltage, VGM

Storage Temperature,

(See Chart 6)
5 Volts

Tstg

-40

Operating Temperature, Tj

C
+100C

to +125

-40C to

25 Lb.-In. (29 Kg.-Cm.) (2.8N-M)

Stud Torque (Isolated and Non-Isolated Stud Types)

800 Lbs. (364 Kg.) (3.56Nx 10 )

Type)
1800 Volts RMS
Isolation Breakdown Voltage Between any Terminal and Stud or Flange (Isolated Types)(s)

Insertion Pressure (Press-Fit

NOTES:
Values apply for zero or negative gate voltage only.
Half sine wave voltage pulse, 10 milliseconds maximum duration.
3. During performance of the Off-State and Reverse Blocking tests, the SCR should not be tested with a constant current source which
would permit applied voltage to exceed the device rating.
4. di/dt rating is established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6.
1.

2.

5.

Rating applies for 50, 60 and 400 Hz sinusoidal wave form.

PART NUMBER DESIGNATION

C 220 U 2
^
SILICON CONTROLLED RECTIFIER
T [_
r
CURRENT RATING & PACKAGE STYLE VOLTAGE RATINGS

220 = 10
222 = 10

A RMS
A RMS

Stud/TO-3 Flange

==

Press-Fit

==

50 Volts

==

100 Volts

B
C

==
==

==

==

25 Volts

200
300
400
500
600

Volts
Volts

STUD/TO-3 FLANGE PACKAGE VARIATIONS

None = Non-Isolated Stud Mount
2 = Isolated Stud Mount with
Press on Anode Terminal
3 = Isolated Stud Mount with
Solder Ring Anode Terminal
4 = Isolated on TO-3 Outline
Mounting Flange
on TO-3 Outline
Mounting Flange

Volts

5 = Non-Isolated

Volts
Volts

863

= Other Standard Variations

C220/C222

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current 1

SYMBOL

Voltage

MAX.

and

VTM

UNITS

mA

TEST CONDITIONS

Vdrm

VRRM

0.1

T c = + 25C

0.5

T c = +100C

1.95

Volts

= max. allowable

T c = +25C, I TM = 20 A

Peak,

second wide pulse, duty cycle

Critical Rate-of-Rise of
Off-State Voltage
(Higher values may
cause device switching)

DC Gate Trigger
Current
DC

dv/dt

Iqt

VGT

DC

Vgd

Gate Non-Trigger
Voltage
Holding Current

50

Volts/yusec

25

40

1.5

2.0

0.2

mAdc

milli-

< 2%.

wave form.

T c = +25C, VD =
Tc =

6 Vdc,

-40 C, VD = 6 Vdc,

RL

= 9

R L = 45

Ohms
Ohms

Vdc

T c = +25C, V D =
T c = -40C, V D =

Vdc

T c =+100C, Rated VDRM ,R L = 1000 Ohms

mAdc

Ih

peak

volts

T c =+100C, Rated VDRM Gate open

circuited, linear

Gate Trigger
Voltage

DC

TYP.

Irrm
^DRM

Peak On-State

MIN.

6 Vdc,

RL

6 Vdc,

RL =

Ohms

45

Ohms

= 9

Anode Source Voltage = 24 Vdc, Peak

Initi-

ating On-State Current = 0.5 A, 0.1 msec to

10 msec Wide Pulse. Gate Trigger Source =
7 Volts, 20 Ohms.

DC

Latching Current

30

T c = +25C

60

Tc =

mAdc

II

-40 C

Anode Source Voltage = 24 Vdc.

trigger source = 15 Volts, 100
50/zsec pulse width, 5 /isec rise and
times maximum.

Gate

Steady-State Thermal
2
Resistance

R 0JA

Steady-State Thermal
Resistance

Rejc

60

T c = +25C

120

T c = -40C

2.00

Non-Isolated Stud/Press Fit

2.15

Isolated Stud

2.15

Non-Isolated TO-3 Flange

2.30

Isolated

45

C/Watt

Junction-to-Ambient

C/Watt

Junction-to-Case

Ohms,
fall

TO-3 Flange

NOTES:
1.

2.

Values apply for zero or negative gate voltage only.

The junction-to-ambient value is under worst case conditions;

i.e.,

with No. 22 copper wire used for electrical contact to the terminals

and natural convection cooling.

WARNING
Isolated products described in this specification sheet should be handled with care.
BERYLLIUM OXIDE as a major ingredient.

The ceramic portion of

these thyristors

contains

Do not
if

crush, grind, or abrade these portions of the thyristors because the dust resulting

inhaled.

864

from such action may be hazardous

C220/C222
NOTESRESISTIVE OR INDUCTIVE LOAD, 50 TO
400 Hi.
Z RATINGS DERIVED FOR Q5 WATTS
1

3.

CURVES APPLY FOR RATE OF RISE OF

ON- STATE CURRENT (di/dt) 10
AMPERES PER MICROSECOND
MAXIMUM.

IW ^

notes:

_vj

vvi

360*
ISO*
RESISTIVE OR INDUCTIVE LOAD. 50 TO 400 Hi.
2. RATINGS DERIVED FOR 0.5 WATTS AVERAGE GATE
POWER DISSIPATION.
3. CURVES APPLY FOR RATE OF RISE OF ON-STATE
i

CURRENT

(di/dt)- 10

AMPERES PER MICROSECOND

X^SHADED AREA REPRESENTS

oy

CONOUCTtON
AN6LE

U-

>

\
1

DC
IBO"

CONDUCTION ANGLE

120"

CONDUCTION \
ANGLE- 30*

60

20

240

180"

360'

90

60'

AVERAGE ON-STATE CURRENT (AMPERES)

1.

CONDUCTION ANGLE.

^NSxNxvNN^Lieo*

AVERAGE ON-STATE CURRENT (AMPERES)

MAXIMUM ALLOWABLE CASE TEMPERATURE

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR HALF-WAVE RECTIFIED

SINE WAVE OF CURRENT
(FOR NON-ISOLATED STUD AND

FOR FULL-WAVE RECTIFIED

SINE WAVE OF CURRENT
(FOR NON-ISOLATED STUD AND

PRESS-FIT CASE TYPES ONLY)

PRESS-FIT CASE TYPES ONLY)

DC

0*/

ii
CONDUCT 10

ISO*

\\\l0"
*

1*-

120*/
90"

80"

NOTES
l-lTM " "SEC WIDE PULSE,
DUTY CYCLE i2%

CONOU CTION AN >LE'30*

'

NOTES
1

TC

25'C

3.

T C IOO"c/

MAXIMUM ON-STATE VOLTAGE

ON-STATE CURRENT

'

t-

I'
k

J_
0

RATINGS DERIVED FOR 0.5 WATTS

AVERAGE GATE POWER DISSIPATION.
CURVES APPLY FOR RATE Of" RISE OF

ON-STATE CURRENT (di/dt)- 10

AMPERES PER MICROSECOND MAXIMUM.

INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

SI

RESISTIVE OR INDUCTIVE LOAD, 50 TO

400 Hz.
2.

11/
ISO*

3456769

10

AVERAGE ON-STATE CURRENT (AMPERES)

VS.

4.

MAXIMUM ON-STATE POWER

DISSIPATION

FOR HALF-WAVE RECTIFIED SINE WAVE

OF CURRENT

y ?

360*
180"

|,0

20*

o
COND JCTION ANGLE -60

/ y

;
o
1.

2.

RESISTIVE OR INDUCTIVE LOAD, SOTO 400 Hi.

RATINGS DERIVED FOR 0.5 WATTS AVERAGE

GATE POWER DISSIPATION.

3 CURVES APPLY FOR RATE OF RISE OF ON-STATE

<
4.

CURRENT (dl/dt) - 10 AMPERES PER MICROSECOND MAXIMUM.

SHADED AREA REPRESENTS CONDUCTION

AVERAGE ON- STATE CURRENT (AMPERES)

NSTANTANEOUS GATE CURRENT- AMPERES

MAXIMUM ALLOWABLE ON-STATE POWER

6.

DISSIPATION FOR FULL-WAVE

SINE WAVE OF CURRENT
865

GATE TRIGGER CHARACTERISTICS

C220/C222

'

NOTES;
1

2.

4.

RECTANGULAR GATE CUR TENT PULSE APPLIED

RISE AND FALL TIMES E 3UAL TO OR LESS
THAN 10% OF GATE PUL SE WIDTH.

LOAD RESISTOR "91 OHM S AT 25*C. 45 OHMS

AT-40-C.

NOTES'
1

2-

ANODE VOLTAGE 6 VDC

LOAD RESISTOR -91 OHMS AT 25"C,
45 OHMS AT-40C.
.

-40 e C

CASE TEMPERATURE, TCi

7.

HOTES
1.

*/

~/

&&
-&y

4
#y

$
"5*

.>

"X

'

'

11

'

'

VS.

4.

'

sohTv^

GATE DRIVE: 10 VOLTS, 20 OHM SOURCE, 10 MICROSECOND PULSE WIOTH MINIMUM, 0.2 MICROSECOND
i_
RISE TIME MAXIMUM.
INSTANTANEOUS VALUE OF ON-STATE CURRENT MUST
NEVER EXCEED TURN-ON CURRENT LIMIT LINES
SHOWN.

NOTES

RATING IS ESTABLISHED IN ACCORDANCE WITH

JEDEC SUGGESTED STANDARD N0.7, SECTION 5.1.2.4.
OFF -STATE (BLOCKING) VOLTAGE CAPABILITY MAY BE
TEMPORARILY LOST AFTER EACH CURRENT PULSE
FOR DURATIONS LESS THAN THE PERIOD OF THE
APPLIED PULSE REPETtTION RATE. THE PULSE
REPETITION RATE FOR THIS TEST IS400HJ.THE
DURATION OF THE JEDEC dl/dt TEST C ONL IT ON
5 SEC MIN.

5. di/dt

II

TIME FROM START OF CURRENT FLOW (MICROSECONDS

9.

GATE PULSE WIDTH

'

FREQUENCY -400H* MAXIMUM.

^Hi

"^

JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO SURGE -40'C TO + IOO'C
GATE CONTROL MAY BE LOST DURING AND
IMMEDIATELY FOLLOWING THE SURGE
CURRENT INTERVAL
3 CURRENT OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE HAS
RETURNED TO WITHIN STEADY-STATE
RATED VALUE.
1

2.

MAXIMUM DC GATE CURRENT TO TRIGGER

8.

3 REQUIRED

FA

>

II

GATE PULSE WIDTH (MICROSECONDS)

MAXIMUM DC GATE CURRENT TO TRIGGER

VS. CASE TEMPERATURE

Si-

( C)

TURN-ON CURRENT LIMIT

10.

MAXIMUM ALLOWABLE SURGE CURRENT

FOLLOWING RATED LOAD CONDITIONS

2.0

NOTES:
I.

2.

3.

4.

5.

CURVES APPLY FOR HALF SINE

WAVE CURRENT WAVEFORM.
THIS OVERLOAO MAY BE APPLIED
FOLLOWING DEVICE OPERATION AT
ANY VOLTAGE OR CURRENT WITHIN
ITS STEADY- STATE RATING LIMITS.
THE OVERLOAO MAY NOT BE REPEATEO
UNTIL DEVICE JUNCTION TEMPERATURE
HAS CCOLEO DOWN TO WITHIN
STEADY STATE RATED VALUE.
NO BLOCKING VOLTAGE RATING IS
IMPLIED DURING OR IMMEDIATELY
FOLLOWING THE OVERLOAD CURRENT

i.,

.-^NOTES:

<

URVE DEFINES TEMPERATURE RISE OF JUNCTION ABOVE CASE FOR

SINGLE LOAD PULSE OF DURATION (l). PEAK ALLOWABLE POWER
MSSIPAT10N IN THYRISTOR FOR TIME (t).STARTNG FROM CASE
rEMPERATURE EQUALS 100'C (MAX T) MNUS CASE TEMPERATURE
DIVIDED BY THE TRANSIENT THERMAL MPEOANCE:

1.

i
X
"

INTERVAL.

t-

JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO OVERLOAD - -40"C TO +KXTC.

UJ
in

.8

IOO*C - TC

PpE4K, ieJ c,

5
P

2. F
.4

OR OPTIMUM

i iNO

lOt

PULSE WIDTH ( m-SEC)

11.

SUB-CYCLE SURGE AND

RATINGS AND FURTHER INFORMATION, SEE PUBLICATION

ENTITLED.'POWER SEMICONDUCTOR RATINGS UNDER TRANSIENT
INTERMITTENT LOADS'

200.9

DC >4

.01

.0 4

TIME

t RATING
FOLLOWING RATED LOAD CONDITIONS

12.

.1

(t)

MAXIMUM TRANSIENT THERMAL IMPEDANCE,

JUNCTION-TO-CASE
(FOR NON-ISOLATED STUD

AND

PRESS-FIT CASE TYPES ONLY)

866

(SECONDS)

C220/C222

VIEW SHOWING
TERMINAL 2

Q2. ANODE

WITH PRESS-ON
TERMINAL 2

WITH SOLDER

ADl

RING

TERMINAL 2
STRAIGHT L

KNURL
50 TPI

n
B

t_

Jl

|tl- A-

3.

SATE

'

(KNURL

I.

CATHODE

DIA.)

ISOLATED STUD
TYPE 2

PRESS-FIT

ISOLATED STUD
TYPE 3

TERMINAL

ARRANGEMENT

VIEW SHOWING
TERMINAL 2

T"

C3

AM
AO

AN

AR

IINSU.ATOBI

JAP
lie
ISOLATED TO-3 FLANGE
TYPE 4
INCHES
MAX.

SYMBOL

MIN.

METRIC

MM

MIN.

MAX.

SOI

.505

12.73

12.62

.467

.475

11.87

12.06

450 REF
765
6.60

ni
NON-ISOLATED TO-3 FLANGE
TYPE 5
INCHES
MAX.

SYMBOL

MIN.

r
2

.580

D
E

.083

.097

2.11

.340

.376

8.64

9.55

.782

19.86

.089

2.06

2.26

AB
AC
AD
AE
AF
AS

.069

1.53

1.75

AH

.160

.868

**.4

AJ

12.06

AK
AL

.177 REF.

260

G
H

OBI
.060

N
P

.432
1/4-28,

R)

.086

.301

2.46

.475

.442

10.98

UNF2A
.098

2.19

11.22

248

T
V

.552

.562

14.03

14.27

.240

.260

6.10

6.60

.145

.160

3.68

4.06

AM
AN
AP
AO
AR

.610

.m
.585

.220 REF

METRIC

MM

MIN.

MAX.

14.74

15.49

5.59
.31

3.81

5.82

6.37

30.03

30.27

1.507

1.567

.975

1.025

38.28
24.77

.161

3.81

1.182

1.192

.150

.119

4.07

.630

.131

3.03

1.018

313
.515

.58

hex
2.

3.32

23.25

press-fit devices at the cen-

2 and 3 at the center of any

for TO-3 outline mounting flange types 4 and 5 at

flat;

One external tooth lock washer and one nut (both steel,
cadmium plated) are supplied with each stud and isolated
stud unit.

3.

Insulation hardware for stud devices consisting of solder

terminal, mica washers and one nylon bushing are available
at extra cost upon request.

4.

Other standard package variations are available upon request.

4.08
16.00

measured for

is

the center of the bottom of the flange.

39.80
26.03

25.92

Case temperature

ter of the base; for stud types 1,

14.85

3.56

.251

1.

REF

.150

.140

NOTES:

24.84

023

012
.229

TOP VIEW

5.

Metric stud

upon

8mm

1.25 (.315

in.

x .049

in.)

is

available

request.

13.08

MOUNTING CONSIDERATIONS
Installation of Press- Fit

When

SCR

in

Attachment of Press Fit Device to Printed Circuit Board

For certain light, load applications, the SCR can be inverted and,

Heat Sink

SCR into a heatsink, the following specifications

and recommendations apply:
1. Heatsink materials may be copper, aluminum or steeL For maxiheat transfer and minimum corrosion problems, copper
is recommended. The heatsink thickness, or amount of heatsink
wall, in contact with the SCR should be 1/8 inch.
press fitting

using a special brass bracket (A.7 149451), dip-soldered into a

printed circuit board. The feet on the bracket act both as a mechanand anode electrical connection. For SCRs preical support
assembled into the bracket, add -XI 23 to the type number, for

mum

2.

3.

4.

5.

example C222BX123.

The hole diameter into which the SCR is pressed must be

0.4975 t .001 inch. A slight chamfer on the hole should be
used. This hole may be punched in a flat plate and reamed, or
extruded and sized in sheet metaL
The entire knurled section of the SCR should be in contact
with the heatsink to insure maximum heat transfer. The SCR
must not be inserted into a heatsink deeper than the knurl height
The SCR insertion force must not exceed 800 pounds. If the

PRINTED
CIRCUIT BOARD
\<>_)V

DIP

CONNECTIONS

insertion force approaches this value before complete insertion,

either the SCR is misaligned with the hole or the SCR-to-hole
interference is excessive. The insertion force must be uniformly applied to the top face (terminal end) of the SCR within
an annular ring which has an inside diameter of not less than
0.370 inch and not larger than 0.390 inch; the outside diameter
of the insertion force must not be less than 0.500 inch.
The thermal resistance between the SCR case and a copper heatsink will not exceed 0.5C/W, if the SCR is inserted in the manner
described.

j///

n rmi

WIRINO TO
V PRINTED
ALL 3 CONNECTIONS

BOTTOM VIEW
OF ASSEMBLY
BEFORE
MOUNTING
TO BOARD

Attachment of the Stud & Isolated Stud Device to a Heat Sink

These devices require certain precautions in order to insure good
thermal transfer. The chassis hole must be drilled and deburred,
and should be between .005 and .015 inches larger than the stud
outside diameter. The use of a Torque wrench is highly recommended
and must be used within the torque limits indicated on page 2. A
good grade of silicone grease will minimize contact thermal

Soldering of Press-Fit Package to Heat Sink

The press-fit package may be soldered directly to a heat

60/40 (Pb-Sn) solder at a temperature of about 200C.

SOLDER _/

sink using

resistance.

8(37

Silicon

C228

Controlled Rectifier

C229

35 A

The

Silicon

SCR

is

RMS

50

TO 600 VOLTS

C228/C229 is a reverse blocking triode thyristor. This

which incorporates General Electric's patented POWERGLAS process that improves upon normal pellet passivation techniques. It provides an
intimate bond between the silicon chip and the glass coating. The resulting stable, low-level
Controlled Rectifier

a hermetically sealed device

leakage current provides excellent performance and demonstrated reliability.

FEATURES:

POWER-GLAS

Very low off-state (leakage) current at room and elevated temperatures.

Low power required for gate triggering.
Power switching capabilities up to 10 KW.

Excellent surge current capability.

SIX BASIC

RMS

passivated silicon chip for

on

1800 Volts

Attractive pricing for applications requiring

surge isolated voltage

maximum

reliability.

isolated SCR's.

medium power

devices.

PACKAGES

Other packages available upon request.

PRESS-FIT

ISOLATED STUD

ISOLATED

With Press-On
Anode Terminal

TO-3

TYPE
NON-ISOLATED

STUD

FLANGE

TYPE 4

ISOLATED STUD

NON-ISOLATED

With Solder Ring

Anode Terminal

TO-3

FLANGE

I
TYPE

TYPE 3

868

TYPE 5

C228/C229

MAXIMUM ALLOWABLE RATINGS

VOLTAGE RATINGS
U
VOLTS

c
VOLTS

VOLTS

B
VOLTS

VOLTS

VOLTS

VOLTS

VOLTS

25

50

100

200

300

400

500

600

TEST CONDITIONS

VD rm -

Repetitive Peak Off-State Voltage (1,3)

Vrrm

Repetitive Peak Reverse Voltage

T c = -40C
35

75

150

300

400

600

500

720

RMS

On-State Current, I T (rms)

Average On-State Current, I T(AV
)
Critical Rate-of-Rise

of On-State Current, di/dt

Gate Triggered Operation

to

100C

Vrsm - Non-Repetitive
Tc = -40C to 100C

Reverse Voltage (1 2)
,

35 Amperes (All Conduction Angles)

Depends on Conduction Angle (See Charts 1 and 2)

(See Chart 10)

Switching from 200 Volts

100 Amperes Per Microsecond

Switching from 400 Volts

65 Amperes Per Microsecond

30 Amperes Per Microsecond

Switching from 500 Volts

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM 60 Hz

I
I

2
2

300 Amperes

(for fusing) at 8.3 milliseconds (See Chart 7)

3.70 Ampere 2 Seconds

(for fusing) at 1.0 milliseconds (See Chart 7)

2.60

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)
Peak Positive Gate Current, I GM

5 Watts for 10 Microseconds

0.5 Watts
(See Chart 9)

Peak Positive Gate Voltage, VGM

Peak Negative Gate Voltage, VG m
Storage Temperature,

(See Chart 9)
5 Volts

Tstg

-40C to +150C

Operating Temperature, Tj

-40C to +125C
25 Lb.-In. (29 Kg-Cm) (2.8 N-M)
800 Lbs. (364 Kg) (3.56Nx 10 3 )

Stud Torque (Isolated and Non-Isolated Stud Types)

Maximum
Isolation

Ampere 2 Seconds

Insertion Pressure (Press-Fit Types)

Breakdown Voltage Between any Terminal, Stud

or Flange (Isolated Types)( s )

1800 Volts

RMS

NOTES:
1.

2.
3.

4.
5.

Values apply foi zero or negative gate voltage only.

Half sine wave voltage pulse, 10 millisecond maximum duration.
During performance of the Off-State and Reverse Blocking tests, the SCR should not be tested with a constant current source which
would permit applied voltage to exceed the device rating.
di/dt rating is established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6.
Rating applies for 50, 60 and 400 Hz sinusoidal waveform.

PART NUMBER DESIGNATION

C 228 U 2

SILICON

CONTROLLED RECTIFIER

STUD/TO-3 FLANGE PACKAGE VARIATIONS

CURRENT RATING & PACKAGE STYLE

228 = 35
229 = 35

A RMS
A RMS

Stud/TO-3 Flange
Press-Fit

VOLTAGE RATINGS

= 25 Volts
F = 50 Volts
A = 100 Volts
B = 200 Volts
C = 300 Volts
D = 400 Volts
E = 500 Volts
M = 600 Volts

869

None = Non-Isolated Stud Mount

2 = Isolated Stud Mount with
Press-on Anode Terminal
3 = Isolated Stud Mount with
Solder Ring Anode Terminal
4 = Isolated on TO-3 Outline
Mounting Flange
on TO-3 Outline
Mounting Flange

5 = Non-Isolated

9 = Other Standard Variations

C228/C229

CHARACTERISTICS
TEST
Repetitive Peak OffState and Reverse

Current CO

SYMBOL

TYP.

MAX.

and

vtm

VDRM

+25C

VRRM

1.0

Tc =

3.0

T c =+125C

1.9

Volts

= Max allowable
-

Tc = +25C, I TM = 100 Amps,

second wide pulse. Duty Cycle

Voltage

DC

TEST CONDITIONS

UNITS

mA

Irrm
Idrm

Peak On-State

MIN.

Gate Trigger

Igt

Current

DC Gate Trigger
Voltage

Vgt

DC

Gate Non-Trigger
Voltage

Vgd

DC

Ih

Holding Current

40

80

2.5

3.0

0.2

mAdc
Vdc

Vdc

T c = -40C,
T c = +25C,

12 Vdc,

V D = 12 Vdc,

1000

mAdc

peak,

peak

milli-

< 2%.

RL
RL
V D = 12 Vdc, R L
T c = -40C, V D = 12 Vdc, R L
T c = +125C, Rated VDRM R L
T c = +25C, V D =

volts

= 80

Ohms

= 50 Ohms
= 80 Ohms
= 80 Ohms
=

Ohms

Anode Source Voltage = 24 Vdc, Peak Init= 0.5 Amps, 0.1 msec

iating On-State Current

to 10 msec wide pulse. Gate Trigger Source

7 Volts, 20 Ohms

DC

Latching Current

Steady-State Thermal

T c = +25C

75

T c = -40C

150

mAdc

II

RflJA

Anode Source Voltage = 24 Vdc.

Gate trigger source = 1 5 Volts, 1 00 Ohms,
50 jusec pulse width, 5 Msec rise and fall
times max.

150

T c = +25C
T c = -40C

300

45

1.70

Non-Isolated Stud/Press-Fit

1.85

Isolated Stud

1.85

Non-Isolated TO-3 Flange

2.0

Isolated

C/Watt

Junction-to-Ambient

Resistance
Steady-State Thermal
Resistance

C/Watt

Rejc

Junction-to-Case

TO-3 Flange

NOTES:
1.
2.

Values apply for zero oi negative gate voltage only.

is under worst case conditions;

The junction-to-ambient value

i.e.

with No. 22 copper wire used for electrical contact to the terminals

and natural convection cooling.

WARNING
Isolated products described in this specification sheet should be handled with care.

contains

BERYLLIUM OXIDE

Do not
if

as a

The ceramic portion of these

thyristors

major ingredient.

crush, grind, or abrade these portions of the thyristors because the dust resulting

inhaled.

870

from such action may be hazardous

OTES^
120

400 Hi.
RATINGS DERIVED FOR 05 WATTS

115

URVES APPLY FOR RATE OF RISE OF

N- STATE CURRENT (di/dt) -10
MPERES PER MICROSECOND

3.C

plK>
1

iu

4AXIMUM.

v\Vv

105

\\\

\\\ \

IE
&

95

\\ 5S

- 90

(A

85

\
\\

8* 70

ilk

180

CONDUCTION
ANGLE

UT

360 8
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400Hi
RATINGS DERIVED FOR 0.5 WATTS AVERAGE GATE

POWER DISSIPATION.
CURVES APPLY FOR RATE OF RISE OF ON-STATE
CURRENT (di/dt)* 10 AMPERES PER MICROSECOND
MAXIMUM
4. SHADED AREA REPRESENTS CONDUCTION ANGLE.

S^S^^,

0*

3.

i
s

A$
VV
IT \
\\
AN A

2.

55

DC\

50

C0N0UCT1ON

ANGLEOO'

90

60"

120'

ISO"

AVERAGE ON-STATE CURRENT (AMPERES)

AVERAGE ON-STATE CURRENT (AMPERES)

MAXIMUM ALLOWABLE CASE TEMPERATURE

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR FULL-WAVE RECTIFIED

SINE WAVE OF CURRENT
(FOR NON-ISOLATED STUD AND

FOR HALF-WAVE RECTIFIED

SINE WAVE OF CURRENT
(FOR NON-ISOLATED STUD AND

PRESS-FIT CASE TYPES ONLY)

PRESS-FIT CASE TYPES ONLY)

100

TC

wz/Y

50

1 Ac-25-C

/
NOTES
1

It

MSEC WIC E PULSE.

DUT Y CYCLE

12

0.1

<2%

INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

MAXIMUM ON-STATE VOLTAGES

ON-STATE CURRENT
"-"

50

AVERAGE ON-STATE CURRENT (AMPERES)

VS.

MAXIMUM ON-STATE POWER

-1
i

NOTES:

45-

40cn
i>-

DISSIPATION

FOR HALF-WAVE RECTIFIED SINE WAVE

OF RECTIFIED CURRENT

'Iw
180*

FRE0UENCr--400H/ MAXIMUM

2 CASE TEMPERATURE- -40*C TO +IOO*C

} REQUIRED GATE DRIVE 10 VOLTS, 20 OHM SOURCE 10
MICROSECOND PULSE WIDTH MINIMUM, O 2 MICROSECOND
RISE TIME MAXIMUM
,

360

360

4 INSTANTANEOUS VALUE OF ON-STATE CURRENT MUST

NEVER EXCEED TURN-ON CURRENT LIMIT LINES

240/'

35

SHOWN

di/dt RATING IS ESTABLISHED IN ACCORDANCE WITH

JEDEC SUGGESTED STANOARO NO- 7, SECTION 3 1-2 4.
OFF -STATE (BLOCKING) VOLTAGE CAPABILITY MAY BE
TEMPORARILY LOST AFTER EACH CURRENT PULSE
FOR DURATIONS LESS THAN THE PERIOD OF THE
APPLIED PULSE REPETITION RATE THE PULSE
REPETITION RATE FOR THIS TEST IS 400H* THE
DURATION OF THE JEDEC di/dt TEST CONDITION IS
3 SEC MIN

1000

II

180

>

700
120

^25
Lu5:

820
25
15
10

CONDUCTION ANGLE* 60

/<

300

...

200

II

NOTES'
RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hi
2. RATINGS DERIVED FOR 05 WATTS AVERAGE
GATE POWER DISSIPATION.
3 CURVES APPLY FOR RATE OF RISE OF ON-STATE

KX>

CURRENT

(dl/dt)

10

2"
It

AMPERES PER MICRO-

5
4.

SHADED AREA REPRE. ENTS CONDUC TION

ANGLE.

O
10

50

15

20

i$r>

25

30

35

70

M?A

I#

- r&i

t*^TJ?e

rf/
20|A^>
<P

AVERAGE ON-STATE CURRENT (AMPERES)

/& -.

p-

P/ p^p
&A IK&

50

30

&

4f
f
\

MAXIMUM ALLOWABLE ON-STATE POWER

1.0

DISSIPATION FOR FULL-WAVE

SINE WAVE OF CURRENT

TIME FROM START OF CURRENT FLOW (MICROSECONDS)

6.

871

TURN-ON CURRENT LIMIT

C228/C229
NOTES
CURVE DEFINES TEMPERATURE RISE OF JUNCTION ABOVE CASE FOR
SINGLE LOAO PULSE OF DURATION (t). PEAK ALLOWABLE POWER
DISSIPATION IN THYRISTOR FOR TIME(t),STARTWG ^"ROM CASE
TEMPERATURE EQUALS 100'C (MAX T) MINUS CASE TEMPERATURE
DIVIDED BY THE TRANSIENT THERMAL IMPEDANCE^
I

LU

too

03

IBs
S

NOTES:

CURVES APPLY FOR HALF SIN6

WAVE CURRENT WAVEFORM.
2 THIS OVERLOAD MAY BE APPLIED
FOLLOWING DEVICE OPERATION AT
ANY VOLTAGE OR CURRENT WITHIN
ITS STEADY-STATE RATING LIMITS
THE OVERLOAD MAY NOT BE REPEATED
3.
UNTIL DEVICE JUNCTION TEMPERATURE
HAS COOLED DOWN TO WITHIN
STEAOY STATE RATED VALUE.
4 NO BLOCKING VOLTAGE RATING IS
IMPLIED DURING OR IMMEDIATELY
FOLLOWING THE OVERLOAD CURRENT

2.

(AMPERE

JUNCTION TEMPERATURE IMMEDIATELY

PRIOR TO OVERLOAD -40"C TO+IOO'C

IQO'C

ejcd)
FOR OPTIMUM RATINGS AND FURTHER INFORMATION. SEE PUBLICATION
200.9 ENTITLED.'POWER SEMICONDUCTOR RATINGS UNDER TRANSIENT
AND INTERMITTENT LOADS."

2.0

ON-STATE

SURGE

o
1.6

PEAK

o
w

1.2

'

Jf-

INTERVAL.
5.

P PEAK

CUR

''"w

500

800

0.8

600
z
o
^ 400

0.4

CO

%300
Ui

-~

'

^200
1
<

H
8.
2

MAXIMUM TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

5 6

(FOR NON-ISOLATED STUD AND

PRESS-FIT CASE TYPES ONLY)

PULSE WIDTH (^SEC)

7.

SUB-CYCLE SURGE AND

TIME (SECONDS)

t RATING FOLLOWING
RATED LOAD CONDITIONS
l

\
\

M AXIMUM ALLOWABLE.
STANTANEOUS GATE
iWER DISSIPATION
*

UALS 5 WATTS
AXIMUM FOR 10

M CfiOSECONDS PULSE

SHADED AREA REPRESENTS LOCUS OF

ALL POSSIBLE DC (>20 MICROSECONDS)
GUARANTEED TRIGGERING POINTS FROM

\
\

\
AVERAGE GATE POWER
Jl\
EQUALS
j\ \r- DISSIPATION
0.3WATT MAXIMUM
J \VC

^,

RECOMMENOCO SATE CIRCU

~ -~^^_

INSTANTANEOUS GATE CURRENT- AMPERES

9.

GATE TRIGGER CHARACTERISTICS

APPLICATION INFORMATION AVAILABLE FROM GENERAL ELECTRIC

PUBLICATION

NUMBER
200.31

200.32

200.33

PUBLICATION
APPLICATION NOTES
Phase Control of SCR's With Transformer
and Other Inductive AC Loads
A Variety of Mounting Techniques for PressFit SCR's and Rectifiers

APPLICATION NOTES

200.44

Speed Control for Shunt -Wound Motors

Speed Control for Universal Motors
Washers, Ring Counters and Chasers
A Hug-In Speed Control for Standard Portable Tools and Appliances
Universal Motor Control With Built-in SelfTimer

200.47
200.48
201.1

Regulated Battery Charges Using the Silicon

Controlled Rectifier

200.43

NUMBER

201.13

DC

Motors Provides
Variable Speed with Synchronous Motor
Performance
Solid State Control for

ETR
3875A

872

SCR Manual

OUTLINE DRAWINGS

C228/C229

VIEW SHOWING
TERMINAL 2

iV-i

2.

ANODE

WtTH PRESS-ON
TERMINAL 2
WITH SOLDER

AD

RING

TERMINAL 2

GATE

3.

B.-dpE

R-

I.

_1

STUD

PRESS-FIT

TYPE

ISOLATED STUD
TYPE 2

TERMINAL

ISOLATED STUD
TYPE 3
_

CATHODE

ARRANGEMENT

VIEW SHOWING

TERMINAL 2
I V
i

AR

EH
ISOLATED TO-3 FLANGE
TYPE 4
METRIC

INCHES
MAX.

SYMBOL
.501

.467
.177

260

MAX.

.505

1273

12.82

.475

11.87

12.06

.580

REF
765
2 46

REF

4.50

.301

6.60

.083

097

211

.340

.376

864

.782

9.55

.081

089

2.06

226

060

.069

1.53

1.064

75
27 02

284

.302

.146

19.86

MIN.

AS
AC
AD
AE

AF
AG
AH

.086

.098

2.19

248

AJ
AK
AL
AM
AN
AP
AO

T
V

.552

562

14.03

14.27

AR

.240

.260

6.10

6,60

.145

.160

3.68

4.06

N
P

Q
r(8)

.432
1/4-28,

INCHES
MAX.

SYMBOL

MIN.

MIN.

MM

NON-ISOLATED TO-3 FLANGE

TYPE 5

22

.160

3.71

1.150

.475

.442

10.98

7.67

406
2921
1206
11.22

UNF2A

METRIC
MIN.

.975

.610

14.74

1.260

.585
.220 REF

5.59

.012

023

.31

.140

.150

356

229

.251

1.182

1.192

1.507

1.567

38.26

.975

1.025

2477

.150

.161

3.81

1.300

.119

131

630
1.195
.515

4.07

303

Case temperature

measured for

is

press-fit devices at the cen-

ter of the base; for stud types 1, 2

15.49

hex
2.

.58
3.81

and 3

at

the center of any

5 at

TO-3 outline mounting flange types 4 and

of the bottom of the flange.

flat; for

the center

14.85

REF

6.37

1.

32.00

30.27

.160

NOTES:

MAX
2476

5.82

30.03

MM

One external tooth lock washer and one nut (both steel,
cadmium plated) are supplied with each stud and isolated
stud unit.

3.

Insulation

hardware for stud devices consisting of solder

and one nylon bushing are available

terminal, mica washers

39.80
26.03

at extra cost
4.

4.08

33.02

5.

16.00

Metric stud

upon

3.32

upon

request.

Other standard package variations are available upon request.

8mm

1.25 (.315

in.

x .049

in.)

is

available

request.

30.35
13,08

MOUNTING CONSIDERATIONS
Installation of Press-Fit

When

press fitting

SCR

Attachment of Press
in

Heat Sink

For certain

SCR

into a heatsink, the following specifications

and recommendations apply:
Heatsink materials may be copper, aluminum or steeLFor maxi1.
heat transfer and minimum corrosion problems, copper
is recommended. The heatsink thickness, or amount of heatsink
wall, in contact with the SCR should be 1/8 inch.
2. The hole diameter into which the SCR is pressed must be
0.4975 i .001 inch. A slight chamfer on the hole should be
used. This hole may be punched in a flat plate and reamed, or
extruded and sized in sheet metaL
3. The entire knurled section of the SCR should be in contact
with the heatsink to insure maximum heat transfer. The SCR
must not be inserted into a heatsink deeper than the knurl height.
4. The SCR insertion force must not exceed 800 pounds. If the
insertion force approaches this value before complete insertion,
either the SCR is misaligned with the hole or the SCR-to-hole
interference is excessive. The insertion force must be uniformly applied to the top face (terminal end) of the SCR within
an annular ring which has an inside diameter of not less than
0.370 inch and not larger than 0.390 inch; the outside diameter
of the insertion force must not be less than 0.500 inch.
5. The thermal resistance between the SCR case and a copper heatsink will not exceed 0.5C/W, if the SCR is inserted in the manner
described.

Fit Device to Printed Circuit

load applications, the

SCR

Board

can be inverted and,

using a special brass bracket (A7149451), dip-soldered into a

printed circuit board. The feet on the bracket act both as a mechanical
support and anode electrical connection. For SCRs preassembled into the bracket, add -XI 23 to the type number, for

mum

example C228BX123.

PRINTED

r~ CIRCUIT

BOARD

//////////T77
Sprinted
all

wiring to
connections

BOTTOM VIEW
OF ASSEMBLY
BEFORE
MOUNTING
TO BOARD

& Isolated Stud Device to a Heat Sink

These devices require certain precautions in order to insure good
thermal transfer. The chassis hole must be drilled and deburred,
and should be between .005 and .015 inches larger than the stud
Attachment of the Stud

outside diameter. The use of a Torque wrench is highly recommended

and must be used within the torque limits indicated on page 2. A
grade of silicone grease will minimize contact thermal

Soldering of Press- Fit Package to Heat Sink

The press-fit package may be soldered directly to a heat

60/40 (Pb-Sn) solder at a temperature of about 200C.

light,

good

sink using

resistance.

873

C230-C232
C231-C233

Silicon

Controlled Rectifier
25 A RMS TO 600 VOLTS

The
for

Silicon Controlled Rectifier C230/C232 is a reverse blocking

power switching and control circuits for high volume light

triode thyristor designed

industrial

and consumer

applications.

The C231/C233

is

same

basically the

gate trigger current of 9 milliamperes

C230/C232
maximum.
as the

device except for a specially selected

SCR is a hermetically sealed device which incorporates General

POWER-GLASTM process that improves upon normal pellet passivation
This

vides an intimate

bond between

the silicon chip and the glass coating.

low-level leakage current provides excellent performance

Electric's

patented

techniques.

The

and demonstrated

It

pro-

resulting stable,

reliability.

FEATURES:

POWER-GLAS

Very low off-state (leakage) current at room and elevated temperatures.

Low power required for gate triggering.
Power switching capabilities up to 10 KW.

Excellent surge current capability.

SIX BASIC

RMS

passivated silicon chip for

1800 Volts

Attractive pricing for applications requiring

surge isolation voltage

on

maximum

reliability.

isolated SCR's.

medium power

devices.

PACKAGES

Other packages available upon request.

PRESS-FIT

ISOLATED STUD

ISOLATED TO-3

With Press-On
Anode Terminal

FLANGE

TYPE

NON-ISOLATED

STUD

TYPE 4

ISOLATED STUD

NON-ISOLATED TO-3

With Solder Ring

Anode Terminal

FLANGE

I
TYPE

TYPE 3

874

TYPE 5

C230/C232

C231/C233

MAXIMUM ALLOWABLE RATINGS

VOLTAGE RATINGS
U
VOLTS

VOLTS

VOLTS

VOLTS

VOLTS

VOLTS

VOLTS

VOLTS

25

50

100

200

300

400

500

TEST CONDITIONS

600

VD rm -

Repetitive Peak Off-State Voltage (1,3)

Vrrm

Repetitive Peak Reverse Voltage

Tc =
75

35

150

300

400

600

500

Vrsm

720

to

100C

25 Amperes (All Conduction Angles)

Depends on Conduction Angle (See Charts 1 and 2)

of On-State Current, di/dt

Gate Triggered Operation

Non-Repetitive Reverse Voltage (1,2)

T c = -40C

RMS On-State Current, I T (rms)

Average On-State Current, I T (av)
Critical Rate-of-Rise

-40 C to 100C

(See Chart 11)

(4)

Switching from 200 Volts

100 Amperes Per Microsecond

Switching from 400 Volts

65 Amperes Per Microsecond

30 Amperes Per Microsecond
250 Amperes
260 Ampere 2 Seconds

Switching from 600 Volts

Peak One Cycle Surge (Non-Repetitive) On-State Current, Ijsm> 60 Hz

2
I

(for fusing) for times

>

1.0 milliseconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pg(av)

5 Watts for 10 Microseconds

0.5 Watts

Peak Positive Gate Current, I GM

Peak Positive Gate Voltage, VGM
Peak Negative Gate Voltage, VGM
Storage Temperature,

(See Chart 7)

(See Chart 7)
5 Volts

T stg

-40C to +125C

Operating Temperature, Tj

-40C to +100C

Stud Torque (Isolated and Non-Isolated Stud Types)

Maximum
Isolation

25 Lb.-In. (29 Kg-Cm) (2.8 N-M)

800 Lbs. (364 Kg)(3.56Nx 10 3 )

Insertion Pressure (Press-Fit Types)

Breakdown Voltage Between any Terminal and Stud or Flange

(Isolated Types)* 5 )

1800 Volts

RMS

NOTES:
1.
2.
3.

4.
5.

Values apply for zero or negative gate voltage only.

Half sine wave voltage pulse, 10 millisecond maximum duration.
During performance of the Off-State and Reverse Blocking tests, the SCR should not be tested with a constant current source which
would permit applied voltage to exceed the device rating.
di/dt rating is established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6.
Rating applies for 50, 60 and 400 Hz sinusoidal wave form.

PART NUMBER DESIGNATION

C

230

T
SILICON

CONTROLLED RECTIFIER

CURRENT RATING & PACKAGE STYLE

230 = 25
232 = 25

A RMS
A RMS

STUD/TO-3 FLANGE PACKAGE VARIATIONS

VOLTAGE RATINGS

Stud-TO-3 Flange

Press-Fit

F =

A
231 = 25
233 = 25

A RMS
A RMS

Stud/TO-3 Flange
Press-Fit

25 Volts

50 Volts
= 100 Volts

B = 200
C = 300

Volts

= 400 Volts

E = 500

Volts

None = Non-Isolated Stud Mount

2 = Isolated Stud Mount with
Press-on Anode Terminal
3 = Isolated Stud Mount with
Solder Ring Anode Terminal
4 = Isolated on TO-3 Outline
5

Volts

= 600 Volts

875

6-9

Mounting Flange
= Non-Isolated on TO-3 Outline
Mounting Flange
= Other Standard Variations

C230/C232
C231/C233

CHARACTERISTICS

TEST

SYMBOL

Repetitive Peak OffState and Reverse

Irrm

CurrentU)

Idrm

Peak On-State

and

VTM

MIN.

TYP.

MAX.

UNITS

mA
-

Vdrm

0.5

Tt =

+25C

1.0

Tc = +100C
Volts

1.9

Voltage
dv/dt

200

Volts/jiisec

Off-State Voltage
(Higher values may
cause device switching)

DC Gate Trigger
Current

= Max. allowable

T c = +25C, I TM = lOOAPeak,

DC

Gate Trigger
Voltage

Gate Non-Trigger

Vgt

Vgd

peak

msec

2%.
,

Wave form.

mAdc

!gt

C231/C233

<

volts

Tc = +100C, Rated VDRM Gate Open

Circuited, Linear

C230/C232

25

40

20

1.5

2.0

0.2

T c = +25C, V D =
T c = -40C, V D =
Tc =
Vdc

Tc =
Tc =

Vdc

Tc =

RL

12 Vdc,

= 120

Ohms

R L = 60 Ohms
R L = 120 Ohms
-40C, V D = 12 Vdc, R L = 60 Ohms
+25C, V D = 12 Vdc, R L = 120 Ohms
-40C, V D = 12 Vdc, R L = 60 Ohms
+100 C, Rated V DRM R L =

T c = +25C,

Voltage

DC

Vrrm

wide pulse. Duty Cycle

Critical Rate-of-Rise of

DC

TEST CONDITIONS
=

12 Vdc,

V D = 12 Vdc,

1000 Ohms

Holding Current

mAdc

Ih

Anode Source Voltage = 24 Vdc, Peak Init= 0.5 Amps, 0.1

iating On-State Current

msec to 10 msec Wide Pulse. Gate Trigger

Source = 7 Volts, 20 Ohms

DC

Latching Current

50

T c = +25C

100

Tc =

mAdc

II

-40 C

Anode Source Voltage = 24 Vdc,

Gate Trigger Source = 15 Volts, 100 Ohms,
50 /usee Pulse Width, 5jUsec rise and fall
times max.

Steady-State Thermal
Resistance^)

RflJA

Steady-State Thermal
Resistance

Rejc

100

T c = +25C

200

T c = -40C

1.00

Non-Isolated Stud/Press-Fit

1.15

Isolated Stud

1.15

Non-Isolated TO-3 Flange

1.30

Isolated

45

C/Watt

Junction-to-Ambient

C/Watt

Junction-to-Case

TO-3 Flange

NOTES:
1.

2.

Values apply for zero or negative gate voltage only.

is under worst case conditions;
and natural convection cooling.

The junction-to-ambient value

i.e.,

with No. 22 copper wire used for electrical contact to the terminals

WARNING
Isolated products described in this specification sheet should

contains

Do
if

BERYLLIUM OXIDE

be handled with

care.

The ceramic portion of these

thyristors

as a major ingredient.

not crush, grind, or abrade these portions of the thyristors because the dust resulting from such action

inhaled.

876

may be hazardous

C230/C232

C231/C233

f
CONDUCTION
ANGLE

::
:

0"

60*

120-

90*

1
1

III

DC, 10, 30, 60, CIRCUITS

(II

360 ^:g

rCONOUCTON
ANGLE

DC;

,J.

NOTES:

hT

'

RESISTIVE OR

12)

RATINGS

AVERAGE
i

POWER

141

CASE TO AMBIENT.)

FORWARD

AVERAGE

1/16* IS MINIMUM
APPLY ilS'C PER WATT MAXIMUM
CASE TO AMKENT
THE CONDUCTION ANGLE IS THE
IN THE EXAMPLE SHOWN, 120- a

IS) 1-1/2" 1.1/2"

DISSIPATION

MINIMUM FIN SI !E
FOR WHICH RATINGS APPLY ( IS 'C PER

1-1/2" x 1-1/2" x I/IS" IS

POWER DISSIPATION.

WATT GATE

DERIVED FOR

RESISTIVE OR INDUCTIVE UUC 90 TO *CO CPS

(PROPER OPERATION REQUIRES SPECAL APPLICATION PRE CAUTIONS
RATINGS DERIVED FOR 0.5 WATT GATE AVERAGE
FIN SIZE FOR WHtCMj

'HFRMAL

RATtms

RESISTANCE

TOTAL TIME OF CONDMCTWN, ___, ___

ILLUSTRATED * THE TOTAL SHADED ARtA;

AVERAGE FORWARD CURRENT- AMPERES

CURRENT- AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR HALF-WAVE RECTIFIED

SINE WAVE OF CURRENT
(FOR NON-ISOLATED STUD AND

FOR FULL-WAVE RECTIFIED

FULL-WAVE OF CURRENT
(FOR NON-ISOLATED STUD AND
PRESS-FIT CASE TYPES ONLY)

PRESS-FIT CASE TYPES ONLY)

' '

"i

ZiJU

n
Ml
or
Ml

too

50

240

NOTE

JUNCTION TEMPERATURE IMMEDIATELY

_
1

tc

K
Z>
*>

TJ = + .00C/

/Ti = +25(

tc

10

160

%
tc

notes:

o
S
8
z

z
?

1.

-'

I TM llwSEC WIDE PULSE,

DUTY CYCLE *2%"

0.5

40

<

X
ft.

MC

<

INSTANTANEOUS ON- STATE VOLTAGE

W
CYCLE* AT0<

MAXIMUM ON-STATE VOLTAGE

ON-STATE CURRENT

40

(VOLTS)

MAXIMUM ALLOWABLE PEAK SURGE CURRENT

VS.

FOLLOWING RATED LOAD CONDITIONS

DC

/"K
//
0"

1
V
I

CONI UCTION

c-

"I

36C
Ij

Ap.OLE'

R\SX
RKT

0*

120

300 seo-

120

'l4

/z
,/

60-

roudu3N

CO iouci TON

NUT

// /S

wy
WJTE: JUN ITION

TEM PERA1-URE

NOlblK (1) JUNCTION TEMPERATURE

121 THE CONDUCTION ANGLE

IOCl-C

KWC

IS

THE TOTAL

TIME OF CMDUCTI0I-.IN THE EXAMPLE

SHOWN, lC COMOUCTION IS ILLUSTRATED BY THE TOTAL SHADED AREA

12

16

20

AVERAOE FORWARD CURRENT-AMPERES

MAXIMUM FORWARD POWER

12

16

20

24

26

AVERAGE FORWARD CURRENT-AMPERES

MAXIMUM FORWARD POWER DISSIPATION

DISSIPATION

FOR HALF-WAVE RECTIFIED

SINE WAVE OF CURRENT

877

FOR FULL-WAVE RECTIFIED

SINE WAVE OF CURRENT

0.8

1.2

1.0

1.4

0.8

2.0

.8

1.6

AND

(C230

C232 TYPES)

(C231

140

RANSE

40C TO

fl

ECTANGULAR SATE VOLTAGE PULSE

tVPPLIED
FROM 20 OHM SOURCE

VNODE SUPPLY: 12 VOLTS, 60 OHMS

4.8

ran 30 "C

>

ANODE SUPPLY

2 VOLTS, 60 OHMS

V
<

V
V

\
<

\
v.

V
N
s

\
^S
\
t1
;C23

--^ -~-

o
= 40

III

ICTANGULAR GATE VOLTAGE PULS

A!>PLIED FROM 20 OHM SOURCE.

>

60

5.2

80

T :mperature range -40*c

100

C233 TYPES)

S.6

AND

6.0

00 "C

120

2.0

1.8

OR
T EMPERATURE

1.6

1.4

1.2

GATE TRIGGERING CHARACTERISTICS

GATE TRIGGERING CHARACTERISTICS

160

1.0

INSTANTANEOUS GATE CURRENT.- AMPERES

INSTANTANEOUS GATE CURRENT-AMPERES

- c 231, C2331rYPE3

20

08
0.4

0.2

0.4

0.6 0.8 1.0

4.0

2.

6jO

20

8.0K)

40

60 80

0.4

KX)

9.

0.6

0.8

VARIATION OF GATE TRIGGER CURRENT

WITH GATE PULSE WIDTH (ALL TYPES)

10.

NOTES
CURVE DEFINES TEMPERATURE
(1)

'

<

40

OF JUNCTION ABOVE CASE

RISE

I,

400

?PEAK

AT*
fas

'

100

80
60

l|

y'

<M/1

*/

CASE

TEMPERATURE-^O'CTO+IOO'C

MAXIMUM

0.4

NEVER EXCEED TURN-ON CURRENT LIMIT LINE S

_
SHOWN.
di/dt RATING IS ESTABLISHED IN ACCORDANCE WITH _
JEOEC SUGGESTED STANDARD N0.7.SECTI0N 9.1.2.4.
OFF-STATE (BLOCKING! V0LTA6E CAPABILITY MAY BE
TEMPORARILY LOST AFTER EACH CURRENT PULSE L
1 it
DL
T
IS LESS T HAN THE P ERIO
AP >LI6 D P L SE REPE IT10 RAT ". TH E P UL SE
RE T T
A TE FOR THIS TEST 3 4C OH t.T HE
DU *AT
C F T IE JEO C di /at te ST C ND TIC N s

0.2

>J

30

SE

1., 1.

1.0

<

t\

10

100

0.001

0.01

12.

TURN-ON CURRENT LIMIT

1.0

0.1

TIME

TIME FROM START OF CURRENT FLOW (MICROSECONDS)

11.

ENTITLED "ROWER SEMICONDUCTOR

RATINGS UNDER TRANSIENT AND
INTFRyiTTFNT IOAOS."

0.6

MICROSECOND PULSE WIDTH MINIMUM.O 2 MICROSECOND

RISE TIME

$[

> Kf

0.1

2.

^Jl

COI

20

U-CIt)

FOR OPTIMUM RATINGS AND FURTHER

INFORMATION SEE PUBLICATION 200.

1-

$/&/

<$ /&/<.
S<rs .

.&#/*
*V

(2)

Sys notesFREQUENCY-400Hi MAXIMUM.

:'/i)/ .*.<\-f

xC)/Oif

< 40

IOC*- T C

jP.

200

10

20

POWER OtSSIPATlON IN SCR FOR TIME

STARTING FROM
CASE TEMPERATURE T C EQUALS 100 *C (MAX Tt
MINUS CASE TEMPERATURE OtVIDED BY THE
TRANSIENT THERMAL IMPEDANCE

i.o

"IK

10

VARIATION OF GATE TRIGGER VOLTAGE

WITH GATE PULSE WIDTH (ALL TYPES)
1

rooo
800

GATE PULSE WIDTH -MICROSECONDS

SATE PULSE WIDTH - MICROSECONDS

IN

10

SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE (FOR NON-ISOLATED STUD AND

878

PRESS-FIT CASE TYPES ONLY)

C230/C232

OUTLINE DRAWINGS

C231/C232

VIEW SHOWING

TERMINAL 2
rY-i

>

2.

ANODE

WITH PRESS-ON
TERMINAL 2

WITH SOLDER

AD

RING

TERMINAL 2
STRAIGHT

LLo-

3.

GATE

P A

KNURL
50 TPI

(KNURL

DIA.)

PRESS-FIT

ISOLATED STUD
TYPE 3

ISOLATED STUD
TYPE 2

CATHODE

TERMINAL

ARRANGEMENT

VIEW SHOWING

TERMINAL 2

133

AM
AQ

AN

,i_

11 cr

ISOLATED TO-3 FLANGE

TYPE 4

INCHES
MAX.

SYMBOL

METRIC

MM

MIN.

MAX.

.505

12.73

12.82

.475

11.87

MIN.

.501

S
c
D

467

.301

6.60

.083

.097

211

.340

.376

9.55

864

.782

1986

.081

.089

2.06

.060

.069

1.53

.868

.475

432

.442

10.98

2.19

248

.177

260

N
P

Q
H(S)

1/4-28,

4.50

REF.

UNF2A
098

AR

till

MIN.

12.06

226

AB
AC
AD
AE
AF
AG

1.75

AH

22.04

AJ

12.06
11.22

.086

T
V

.552

562

14.03

14.27

.240

.260

6.10

.145

.160

3.68

660
406

METRIC

INCHES

SYMBOL

REF
765
2 46

NON-ISOLATED TO-3 FLANGE

TYPE 5

580

MAX.

MIN.

.610

14.74

.978
.585

.220 REF
.023

5.59

.012

.140

.31

.150

.160

1.507

1.567

AK

.975

1.025

3826
2477

AL

.150

.161

3.81

.119

4.07

I.OIB

.630
.131

.58

30.27

30.03

3.03

.913
.515

Case temperature

press-fit devices at the cen2 and 3 at the center of any

hex flat; for TO-3 outline mounting flange types 4 and 5 at
the center of the bottom of the flange.

Insulation hardware for stud devices consisting of solder

terminal, mica washers and one nylon bushing are available
at extra cost

25.92
4.
5.

upon

request.

Other standard package variations are available upon request.

332
23.25
1308

stud unit.
3.

4.08
16.00

types

One external tooth lock washer and one nut (both steel,
cadmium plated) are supplied with each stud and isolated

2.

39.80
26.03

measured for

is

ter of the base; for stud

REF

6.37

1.192

1.

14.85

3.81

229

AN
AP
AO
AR

1549

24.84

5.82

1.182

NOTES:

MAX.

356

.251

AM

MM

Metric stud

upon

8mm

1.25 (.315

in.

x .049

in.)

is

available

request.

MOUNTING CONSIDERATIONS
Installation of Press-Fit Device in

When

Heat Sink

Attachment of

ical

example C230BX123.

which the SCR is pressed must be

0.4975 t .001 inch. A slight chamfer on the hole should be
used. This hole may be punched in a flat plate and reamed, or
extruded and sized in sheet metaL

The hole diameter

into

CIRCUIT BOARD

entire knurled section of the SCR should be in contact

with the heatsink to insure maximum heat transfer. The SCR
must not be inserted into a heatsink deeper than the knurl height
4. The SCR insertion force must not exceed 800 pounds. If the
insertion force approaches this value before complete insertion,
either the SCR is misaligned with the hole or the SCR-to-hole
interference is excessive. The insertion force must be uniformly applied to the top face (terminal end) of the SCR within
an annular ring which has an inside diameter of not less than
0.370 inch and not larger than 0.390 inch; the outside diameter
of the insertion force must not be less than 0.500 inch.
5. The thermal resistance between the SCR case and a copper heatsink will not exceed 0.5C/W, if the SCR is inserted in the manner
3.

Board

light,

support and anode electrical connection. For SCRs preassembled into the bracket, add -X123 to the type number, for

mum

2.

Press Fit Device to Printed Circuit

load applications, the SCR can be inverted and,

using a special brass bracket (A7 149451), dip-soldered into a
printed circuit board. The feet on the bracket act both as a mechan-

For certain

SCR

into a heatsink, the following specifications

and recommendations apply:
1.
Heatsink materials may be copper, aluminum or steeL For maxiheat transfer and minimum corrosion problems, copper
is recommended. The heatsink thickness, or amount of heatsink
v. all, in contact with the SCR should be 1/8 inch.

press fitting

The

DIP SOLDER
CONNECTIONS

80TT0M VIEW
OF ASSEMBLY
BEFORE MOUNTING
TO BOARD

& Isolated Stud Device To a Heat Sink

These devices require certain precautions in order to insure good
thermal transfer. The chassis hole must be drilled and deburred, and
should be between .005 and .015 inches larger than the stud outside
diameter. The use of a Torque wrench is highly recommended and
must be used within the torque limits indicated on page 2. A good
grade of silicone grease will minimize contact thermal resistance.
Attachment of the Stud

described.

Soldering of Press-Fit Package to Heat Sink

The press-fit package may be soldered directly to a heatsink using
60/40 (Pb-Sn) solder at a temperature of about 200C.

879

IC234-C235

Silicon

Controlled Rectifier
25 A

RMS TO 600 VOLTS

C234/C235 is a reverse blocking triode thyristor. This

which incorporates General Electric's patented POWERGLAS process that improves upon normal pellet passivation techniques. It provides an
intimate bond between the silicon chip and the glass coating. The resulting stable, low-level
The

Silicon

SCR

is

Controlled

Rectifier

a hermetically sealed device

leakage current provides excellent performance and demonstrated reliability.

FEATURES:
where a low cost inverter

desired.

Ideal for use in applications

Guaranteed

POWER-GLAS

Very low off-state (leakage) current at room and elevated temperatures.

Forward and reverse blocking voltages to 600 volts.
Characterization to 1 000 Hz for both sinusoidal and rectangular anode current wave

maximum

is

turn-off time of 20/isec.

passivated silicon chip for

maximum

reliability.

shapes.

SIX BASIC

Excellent surge current capability.

1800 Volts

RMS

surge isolation voltage

on

isolated SCR's.

PACKAGES

Other packages available upon request.

PRESS-FIT

ISOLATED STUD

ISOLATED TO-3

With Press-On
Anode Terminal

FLANGE

TYPE

NON-ISOLATED
STUD

TYPE

TYPE 4

ISOLATED STUD

NON-ISOLATED TO-3

With Solder Ring

Anode Terminal

FLANGE

TYPE 3

880

TYPE 5

C234/C235

MAXIMUM ALLOWABLE RATINGS

VOLTAGE RATINGS
TEST CONDITIONS

VOLTS

c
VOLTS

VOLTS

B
VOLTS

VOLTS

VOLTS

VOLTS

VOLTS

25

50

100

200

300

400

500

600

VD rm -

Repetitive Peak Off-State Voltage (1,3)

Vrrm

Repetitive Peak Reverse Voltage

Tc = -40C
35

75

300

150

400

500

VRSM

720

600

On-State Current, It(rms)

Average On-State Current, It(av)
Critical Rate-of-Rise of On-State Current, di/dt

Gate Triggered Operation

2
t

(for fusing), for times

>

to

100C

25 Amperes (All Conduction Angles)

Depends on Conduction Angle (See Charts 5 and 7)

(See Chart 11)

Switching from 200 Volts

100 Amperes Per Microsecond

Switching from 400 Volts

65 Amperes Per Microsecond

30 Amperes Per Microsecond

Switching from 600 Volts

Peak One Cycle Surge (Non-Repetitive) On-State Current,

I

100C

Non-Repetitive Reverse Voltage (1,2)

T c = -40C

RMS

to

250 Amperes
260 Ampere 2 Seconds

TSM 60 Hz
,

1.0 milliseconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pg(av)
Peak Positive Gate Current, I GM

0-5 Watts

(See Chart 3)

Peak Positive Gate Voltage, VGM

Peak Negative Gate Voltage, VGM

(See Chart 3)
5 Volts

Tstg

Storage Temperature,

-40C to +125C
-40C to +100C

Operating Temperature, Tj

25 Lb.-In. (29 Kg-Cm) (2.8 N-M)

Stud Torque (Isolated and Non-Isolated Stud Types)

Maximum
Isolation

Watts for 10 Microseconds

3
800 Lbs. (364Kg)(3.56Nxl0 )
1 800 Volts RMS

Insertion Pressure (Press-Fit Types)

Breakdown Voltage Between any Terminal and Stud or Flange

(Isolated

Types)( s )

NOTES:
1.
2.
3.

4.
5.

Values apply for zero or negative gate voltage only.

Half sine wave voltage pulse, 10 millisecond maximum duration.
During performance of the Off-State and Reverse Blocking tests, the SCR should not be tested with a constant current source which
would permit applied voltage to exceed the device rating.
di/dt rating is established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6.
Rating applies for 50, 60 and 400 Hz sinusoidal wave form.

PART NUMBER DESIGNATION

C
SILICON

CONTROLLED RECTIFIER

234 = 25
235 = 25

A RMS
A RMS

LTJL

CURRENT RATING & PACKAGE STYLE

234

VOLTAGE RATINGS

Stud/TO-3 Flange

Press-Fit

A
B
C

D
E

=
=
=
=
=
=
=
=

25 Volts
50 Volts
100 Volts
200 Volts
300 Volts

STUD/TO-3 FLANGE PACKAGE VARIATIONS

None = Non-Isolated Stud Mount
2 = Isolated Stud Mount with
Press-on Anode Terminal
3 = Isolated Stud Mount with
Solder Ring Anode Terminal
4 = Isolated on TO-3 Outline

400 Volts
500 Volts
600 Volts

881

Mounting Flange
= Non-Isolated on TO-3 Outline
Mounting Flange
9 = Other Standard Variations
5

CHARACTERISTICS

C234/C235
TEST
Repetitive Peak OffState and Reverse

CurrentO)

SYMBOL

MIN.

TYP.

MAX.

mA

!rrm
and

Vdrm
Tr =

0.5

Idrm

TEST CONDITIONS

UNITS

Volts

2.0

"TM

Voltage
dv/dt

50

200

Volts/jusec

Off-State Voltage
(Higher values may
cause device switching)

DC Gate Trigger
Current
DC

Gate Trigger
Voltage

mAdc

40

GT

C, I TM = 100 A peak, 1
pulse. Duty Cycle
2%.

T c = +25

<

Vdc

1.5

GT

Gate Non-Trigger
Voltage

'GD

Vdc

0.2

mAdc

Holding Current

Open

Tc =

R L = 120 Ohms
-40 C,
R L = 60 Ohms
= 12 Vdc, R L = 120 Ohms
+25 C,
= 12 Vdc, R L = 60 Ohms
-40 C,
+100 C, Rated V DRM R L =

1000

Ohms

Tc = +25
Tc =
Tc =

2.0

DC

C, Rated V DRM Gate

Circuited, Linear Wave form

T c = +100

80
/

= Max. allowable volts peak

+25 C

msec wide

Critical Rate-of-Rise of

DC

Vrrm

+100 c

1.0

Peak On-State

C,

VD
VD
VD
VD

= 12Vdc,
= 12 Vdc,

Anode Source Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 Amps, 0.1
msec

to 10 msec Wide Pulse. Gate Trigger

Source = 7 Volts, 20 Ohms

DC

75

T c = +25 C

150

Tr =

mAdc

Latching Current

-40

Anode Source Voltage = 24 Vdc.

Gate Trigger Source = 15 Volts, 100 Ohms,
50/isec Pulse Width, 5/isec rise and fall
times max.

100

Tr

200

Commutated
Turn-Off Time

-40"C

20

Circuit

+25"C

jusec

(1)
(2)

(3)
(4)

T c = +100 C
Ixm = 35 Amperes Peak

V R = 50 Volts Min.
VDRM (Reapplied)

(5) Rate-of-Rise of Off-State Voltage

(dv/dt) = 20V//isec
di/dt = -5 Amps/jUsec
Repetition Rate = 60 pps.
(8) V RRM = rated volts max. Rectangular
Current Pulse, 40jusec duration. Reverse
Voltage at end of turn-off time interval
= 12 volts min. Off-State Voltage =
Rated V.
(9) Gate Bias During Turn-Off Interval =

(6)

Commutation

(7)

Volts, 100

Steady-State Thermal
Resistance ( 2 )
Steady-State Thermal
Resistance

ReJA

45

Rejc

Ohms

C/Watt

Junction-to- Ambient

C/Watt

Junction-to-Case

1.00

Non-Isolated Stud/Press-Fit

1.15

Isolated Stud

1.15

Non-Isolated TO-3 Flange

1.30

Isolated

TO-3 Flange

NOTES:
1.

2.

Values apply for zero or negative gate voltage only.

The junction-to-ambient value is under worst case conditions;

i.e.,

with No. 22 copper wire used for electrical contact to the terminals

and natural convection cooling.

WARNING
Isolated products described in this specification sheet should be handled with care.

contains

Do
if

BERYLLIUM OXIDE

The ceramic portion of

these thyristors

as a major ingredient.

not crush, grind, or abrade these portions of the thyristors because the dust resulting from such action

inhaled.

882~

may be hazardous

L)A 1/ \

'

C234/C235

28

<n

en

24

5
TEST LIMIT

S
H

tU
fe

Z
NOTE

REAPPLIED

JUNCTION TEMPERATURE

IOQC

II

df/dt

1-

ON-STATE CURRENT, (I T -AMPERES

)

WAVEFORM

DEFINITION OF TURN-OFF
TIME WITH REVERSE VOLTAGE

2.

TRIGGERING DATA

VARIATION OF MAXIMUM CIRCUIT

COMMUTATED TURN-OFF TIME
WITH ON-STATE CURRENT

000

NOTES:

3.

TC -40C TO +I00C

ANODE SUPPLY

6 VOLTS 60
,

OHMS

200

GATE PULSE WIDTH- MICROSECONDS

NSTANTANEOUS GATE CURRENT-AMPERES

3.

VARIATION OF MAXIMUM GATE TRIGGERING

CURRENT WITH GATE PULSE WIDTH

GATE TRIGGERING CHARACTERISTICS

RECTAMGULAR WAVE DATA

I

'

FREQUENCY = 50 TO 1000 Hz

--

GATE POWER DISSIPATION.

DI/DT* 40 AMPS/(jSEC MAX.
4 REQUIRED GATE DRIVE 5 VOLTS, 20 OHMS,
1.0 pSEC RISE TIME

/8.3% DUTY CYCLE

3.

67%

II II II

Jn

r~i

50%>

rn

It

^WTcYCLE-flifO.
50%

>

2.

60

!!2!S2!

40 AMPS

/\t

SEC MAX.

4 REQUIRED GATE DRIVE

5 VOLTS,
20 OHMS, 1.0 jjSEC rise TIME.
5. RATINGS DERIVED FOR 0.5 WATT
DISSIPATION.
AVERAGE GATE POWER

16.7%

50

JUNCTION TEMPERATURE = I00*C

FREQUENCY = 50 TO 1000 Hi.

3 01 /DT

40

ill
1

33.3%

DUTY cycle.
1

100%

r~i

H
I T

h-

'

70

80

Ill
90

100

MAXIMUM ALLOWABLE POWER DISSIPATION

VS. ON-STATE CURRENT

AND

PRESS-FIT CASE TYPES ONLY)

PEAK ON-STATE CURRENT AMPERES

PEAK ON-STATE CURRENT AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

VS. ON-STATE CURRENT
(FOR NON-ISOLATED STUD

110

883

"

C234/C235
SINE

WAVE DATA
1

FREQUENCY

1.

50 TO 1000

N
NOTES!

r\

Hi.

GATE POWER DISSIPATION.

ti-l
1

(0(100)

%
>UTY

C*i

T
l

CLE -5C

SJ67%"

DUTY CYCLE-

{,,

DUTY CYCLE*50%

s.33.3%

333%,

^31

.71

_j

8.3

?0,
NOT
.

10

-L

FREQUENCY -50 TO 1000 Hi

RATING DERIVED FOR 0.5 WATT
AVERAGE GATE POWER DISSIPATION.

J
PEAK ON-STATE

7.

PEAK ON -STATE CURRENT AMPERES

CURRENT -AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

VS. ON-STATE CURRENT
(FOR NON-ISOLATED STUD

8.

AND

PRESS-FIT CASE TYPES ONLY)

MAXIMUM ON-STATE POWER DISSIPATION

VS. ON-STATE CURRENT

LOW FREQUENCY DATA

500

NOTE

JUNCTION

TEMPERATURE IMMEDIATELY

3
O

MWTAMTAMCOUS OH-STATE V0LTA6E

.

NUMBER OF CYCLES AT 60 Hz.

(VOLTS)

MAXIMUM ON-STATE VOLTAGE

ON-STATE CURRENT

VS.

MAXIMUM ALLOWABLE SURGE CURRENT

FOLLOWING RATED LOAD CONDITIONS

10.

NOTES
1
(1) CURVE DEFMES TEMPERATURE

'

roOi

00

N=1

*o

|%

Hi
\A 1f
-^

too

w>

an
B M "

flKY

!fcv
^

S< 40

Si
o

Ml

*A

Vf

it CASE

V
1

TEMPEUTU.-40 >CT04

..

j
r.o

OO'C.

(2)

Pp

"K

IOC*- T C
"

i-CIM

FOR OPTIMUM RATINOS AND FURTHER

ENTITLED POWER SEMICONDUCTOR

RATINOS UNDER TRANSIENT ANO
INTERMITTENT LOADS.

MM09EC0NC PULSC

WIDTH

SJSIKSJK'Hy**"
JEOEC
SU00ESTE0 SIANOAMO N0.7,KCTKm
4
OFT -STATE (SLOCKM) VW.TAOE CAbSlSy 512
MAY SI
TEMMKASILY LOST AFTM EACH
. . ..
IDUHATI MS LESS HAN THE PERIO DOFT
APIPUCO PU LSE REPE rmoN HAT E.
Th e UL
HE PETITION ATE FOR THIS TEST IS 44X>H
HE
on IATMJNO * THE JEMEC dl /dt TE STC )NC *.T
*TI Misl
SO SEC MIN

ymSmfitSSSma

* <* ""-'TATt CUWEKT MUST

l!5Tri ?. !KS
CKDTU""- " CU,E T "MIT LIW!
rowl"
l

0.4

V* L1

"

"wmnce

with

aSKi

uJL-l

So.t

-J LI

to

0.04

TIME ntOM START Of CIMMMRT FLOW (M

11.

^"*

0.

S 0*

NOTES:

i
J

w
u
z
<
Q

I.

1.0

oS

U
o

a.

RISE OF JUNCTION ABOVE CASE

POWER DISSIPATION IN SCR FOR TIME

STARTING FROM
CASE TEMPERATURE Tr EQUALS fOO*CIMAX T.,1
MINUS CASE TEMPERATURE DIVIDED BY THE
'

-H

00

gS

12.

TURN-ON CURRENT LIMIT

0.1

MS

10

MAXIMUM TRANSIENT THERMAL IMPEDANCE

- JUNCTION-TO-CASE
(FOR NON-ISOLATED STUD

AND

PRESS-FIT CASE TYPES ONLY)

884

C234/C235

OUTLINE DRAWINGS
VIEW SHOWING
TERMINAL 2

Qz. ANODE

WITH PRESS-ON
TERMINAL 2

AE

WITH SOLDER

AD

RING

TERMINAL 2

3.

GATE

6
ISOLATED STUD
TYPE 3

ISOLATED STUD
TYPE 2

PRESS-FIT

I.

CATHODE

TERMINAL

ARRANGEMENT

VIEW SHOWING

~1

TERMINAL 2
rY-i

AQ

"T
AR

nil

NON-ISOLATED TO-3 FLANGE

TYPE 5

ISOLATED TO-3 FLANGE

TYPE 4

INCHES
MAX.

SYMBOL

MIN.

MM

METRIC

MAX.

MIN.

SOI

B
C

.467

.260

.301

6.60

7.65

E
F

083

.097

2.11

2.46

.340

.376

8.64

9.55

.762

.177

.505

12.73

12.82

.475

11.87

12.06

450 REF

REF

OBI

.089

2.06

2.26

060

.069

1.53

1.75

P
.432
I/4-2B,

rW

.868
473
.442

19.86

22.04
12.06

10.98

11.22

UNF2A

.086

.098

2.19

2.48

T
V

.552

.562

14.03

14.27

.240

.260

6.10

6.60

.145

160

3.68

4.06

INCHES
MAX.

SYMBOL
Y
Z

A8
AC
AD
AE

METRIC

MM

MIN.

MIN.

MAX.

.580

14.74

15.49

.610

.978
.585

.220 REF
.012

023

5.59
.31

hex

REF
3.81

30.03

30.27

1.507

1.567

.973

1.025

38.28
24.77

.150

.161

3.81

1.182

1.192

.160

AJ

AK
AL
AM
AN
AP
AO
AR

.630

.119

.131

1.018

.913
.515

4.07

3.03

2.

39.80
26.03

flat;

press-fit devices at the cen-

of the flange.

One external tooth lock washer and one nut (both steel,
cadmium plated) are supplied with each stud and isolated
Insulation hardware for stud devices consisting of solder
terminal, mica washers and one nylon bushing are available
at extra cost upon request.

4.

Other standard package variations are available upon request.

3.32

13.08

bottom

stud unit.

2592

23.25

measured for

3.

4.08
16.00

is

2 and 3 at the center of any

for TO-3 outline mounting flange types 4 and 5 at

the center of the

39
6.37

AF
AG
AH

Case temperature

ter of the base; for stud types

14.85

3.56

.150
.251

1.

24.84

5.82

140

.229

NOTES:

5.

Metric stud

upon

8mm

x 1.25 (.315

in.

x .049

in.)

is

available

request.

MOUNTING CONSIDERATIONS
Attachment of Press
Installation of Press-Fit

When

press fitting

SCR

SCR

in

Heat Sink

into a heatsink, the following specifications

and recommendations apply:

1.

Heatsink materials may be copper, aluminum or steeLFor maxiheat transfer and minimum corrosion problems, copper
recommended. The heatsink thickness, or amount of heatsink
wall, in contact with the SCR should be 1/8 inch.
The hole diameter into which the SCR is pressed must be
0.4975 - .001 inch. A slight chamfer on the hole should be
used. This hole may be punched in a flat plate and reamed, or
extruded and sized in sheet metaL
The entire knurled section of the SCR should be in contact
with the heatsink to insure maximum heat transfer. The SCR
must not be inserted into a heatsink deeper than the knurl height.
The SCR insertion force must not exceed 800 pounds. If the
insertion force approaches this value before complete insertion,
either the SCR is misaligned with the hole or the SCR-to-hole

mum
is

2.

3.

4.

Fit Device to Printed Circuit

Board

load applications, the SCR can be inverted and,

using a special brass bracket (A7149451), dip-soldered into a
printed circuit board. The feet on the bracket act both as a mechanand anode electrical connection. For SCRs preical support
assembled into the bracket, add -XI 23 to the type number, for

For certain

light,

example C234BX123.

PRINTED
"CIRCUIT
BOARO
c

_ n/~m u mn

f>\\i

DIP

SOLDER _/

A_ PRINTED WIRING TO
ALL 3 CONNECTIONS

CONNECTIONS

BOTTOM VIE*
OF ASSEMBLY
BEFORE
MOUNTING

interference is excessive. The insertion force must be uniformly applied to the top face (terminal end) of the SCR within
an annular ring which has an inside diameter of not less than
0.370 inch and not larger than 0.390 inch; the outside diameter
of the insertion force must not be less than 0.500 inch.
5. The thermal resistance between the SCR case and a copper heatsink will not exceed 0.5C/W, if the SCR is inserted in the manner
described.

TO BOARO

Attachment of the Stud & Isolated Stud Device to a Heat Sink

These devices require certain precautions in order to insure good
thermal transfer. The chassis hole must be drilled and deburred,
and should be between .005 and .015 inches larger than the stud
outside diameter. The use of a Torque wrench is highly recommended
and must be used within the torque limits indicated on page 2. A
good grade of silicone grease will minimize contact thermal

Soldering of Press-Fit Package to Heat Sink

The press-fit package may be soldered directly to a heat sink using
60/40 (Pb-Sn) solder at a temperature of about 200C.

resistance.

885

High Power

Silicon

Controlled Rectifier
1300 VOLTS
180 ARMS

AMPLIFYING GATE

The General

Electric C350 silicon controlled rectifier is designed for phase

control applications. This is an all-diffused Press-Pak device employing the
field-proven amplifying gate.

FEATURES:

High di/dt Ratings

High dv/dt Capability With Selections Available

Excellent Surge

Guaranteed

Rugged Hermetic Glazed Ceramic Package

2
I

Ratings Providing Easy Fusing

Maximum Turn-Off Time With

IMPORTANT: Mounting

instructions

Selections Available

on the mounting clamp

specifications

must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, Vqrm 1

VOLTAGE, V RRM l

Tj = -40Cto +125C

Tj = -40C to +125C

500 Volts
600
700
800
900
1000
1100
1200
1300

500 Volts
600
700
800
900
1000
1100
1200
1300

TYPE

C350E

C350M
C350S

C350N
C350T
C350P
C350PA
C350PB
C350PC
Half sinewave waveform 10

ms max.

I T A v)
(
Peak One-Cycle Surge (Non-Repetitive) Current, I TSM (60 Hz)
Peak One-Cycle Surge (Non-Repetitive) Current, I TSM (50 Hz)
Critical Rate-of-Rise of On-State Current (Non-Repetitive)f

of On-State Current

>

(for fusing)

(for times

(for fusing)

(at 8.3 milliseconds)

(Repetitive)f

1.5 milliseconds)

Peak Gate Power Dissipation, PGM

Average Gate Power Dissipation, Pq(av)
Storage Temperature,

Tj = +125C

600 Volts
720
850
950
1075
1200
1325
1450
1550

pulse width.

Average On-State Current,

Cirtical Rate-of-Rise

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM 1

Depends on Conduction Angle (See Charts 1 and 3)

1600 Amperes
1480 Amperes
800 A/n&
500 A/fxs
2
7,680 (RMS Ampere) Seconds
2
10,600 (RMS Ampere) Seconds
10 Watts
2 Watts

T ST g

-40C to +150C

Operating Temperature, Tj

-40C to +125C
800 Lbs. 10%

Mounting Force Required

3.56

Kn + 10%

NOTES:
f di/dt ratings established in accordance with EIA-NEMA Standard RS397, Section 5.2.2.6 for conditions of
20 ohms gate trigger source with 0.5 ms short circuit trigger current rise time.

886

maximum rated Vtjrm

20 volts

>

C350

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

UNITS

mA

Idrm

Tj = +25C

and

V DRM

Irrm

C350E

C350M
C350S

C350N
C350T
C350P
C350PA
C350PB
C350PC
Repetitive Peak Reverse
and Off-State Current

500 Volts Peak

10

600

10

700

10

800

900

1000

1100

1200

1300

mA

Tj = +125C

and

V DRM

C350M

C350S

C350N
C350T
C350P
C350PA
C350PB
C350PC

R0jc

Resistance
Critical Rate-of-Rise of

dv/dt

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

500 Volts Peak

15

20

600

15

20

700

15

20

800

15

18

900

12

15

1000

11

14

1100

10

13

1200

11

1300

200

500

0.26

C/Watt

Junction-to-Case (Single-Side Cooling)

Junction-to-Case (Double-Side Cooling)

0.135

V/^sec

Tj = 125C, Gate Open Circuited. V DRM =

Rated, Using Linear or Exponential Rising
Exponential dv/dt =

minimum

dv/dt

se lection

av lilable

100

mAdc

/xsec

td

Igt

VGt

V TM

16

150

30

200

125

1.25

3.0

0.15

2.0

2.6

mAdc

Vdc

Commutated

tq

200

_*

Turn-Off Time

V DRM
T

(.632)

consult factory.

T c = +25C, Anode Supply = 24 Vdc.

On-State Current = 2 Amps.

T c = +25C, I TM = 50Adc, V DRM = Rated,

Gate Supply: 10 Volt Open Circuit, 20
Ohm, 0.1 jusec max. rise time.
T c = +25C, V D = 6 Vdc, R L = 3 Ohms
T c = -40C, V D = 6 Vdc, R L = 3 Ohms
T c = +120C, V D = 6 Vdc, R L = 3 Ohms
T c = -40C to +120C, V D =
R L = 3 Ohms

6 Vdc,

T c =+120C,VDRM = Rated, R L = 1000

Ohms
Volts

T c = +25C, I TM = 500 Amps.

Duty Cycle

Circuited

20

Initial

DC

V RRM

Waveform.
Higher

Turn-On Delay Time

15

Off-State Voltage. (Higher

values may cause device
switching.)

Holding Current

Idrm

C350E

Thermal

v rrm

10

Irrm

Effective

/usee

<

Peak.

0.01%

= +125C
Itm = 50 Amps Peak
(3) V R = 50 Volts Min.
(4) V DRM = Rated (Reapplied)

(1) Tj
(2)

Rate-of-Rise of Reapplied Off-State

Voltage = 20V/^sec (Linear).
Volts, 100 Ohms During
(6) Gate Bias =
Turn-Off Interval.
0.01%
(7) Duty Cycle

(5)

<

Consult factory

if

guaranteed turn-off time

is

required.

887

C350
140

140

120
120

<
UJ

100
3E

30 #

CTION

fflH

6( '

*"

120*

100

I80

DOTY CYCLE

80

6*2 5%^!)

^"is* ~33%

30%

100%

80
SINGLE- SIDE

60

I
_l
-I
<
X
1
X
<

DC*

60

COOLING
50 TO 400 H,

40

20

m
CONDUCTION
ANGLE

50 TO 400 H,

I
40
'OOt

20

.<., <.

10

20
40
50
30
60
70 SO
AVERAGE FORWARD CURRENT-AMPERES

90

100

110

20
30
40
70
50
60
80
AVERAGE ON- STATE CURRENT -AMPERES

10

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

90

100

110

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

2.

140

120

120

100

100
CONDUCT DON

ANGLE

30*

eo

60*^ 90^20* 0

3
a

80 DUTY C (CLE

DC
1

625%

33%
12.5%

50%

25%

60

60

COOLING

>

H,

20

SIDE

50 TO 400 Hi

40

ANCLE

ML

M7\

^-i-4

20

CONDUC HON L_

DOUBLE

COOLING

/^V

DC (UBLE-SIOE

3 TO 400

100%

10

!<%) DUTY CYCLE

T
1

20

40

60

80

K>0

120

160

40
20
60
80
100
120
AVERAGE ON-STATE CURRENT- AMPERES

180

AVERAGE ON -STATE CURRENT- AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

160

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

4.

700

150

700

DC

100%

600

600

30%

%
180*

500

i
90*

400

500
2 5%

i
400

6 "

CONDIJCTION
300 ANGl .E 30

'

2.5%

/
300

DUT1(
-CYCL E

"

200

200

//

100

100

AVERAGE
5.

ON-STATE

<
200
CURRENT- AMPERES

300
AVERAGE

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

6.

100
ON- STATE CURRENT

AMPERES

MAXIMUM ON-STATE POWER

200

DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

888

300

C350
i-i

"T

DC

3500

LU

K O
U!
Z X

3000
180*

2300

oio
z

J
5

120 /

90

cT

^i

60*

2000

a
8

ui

6
.

CONDUCTION, 30.

/kNO Lt

1000
-STATE

URRENT

HALF

zoo

KO

tij

SI

!*
*

%
100
200 300 400 500 600 700
AVERAGE ON-STATE CURRENT- AMPERES

800

900

1000

1100

,3

456789

PULSE wioTH-MICROSEOONOS

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

8.

UB-CYCLE SURGE (NON-REPETITIVE) ONSTATE CURRENT AND 2 t RATING

l

3000

2000

DOUBLE -SIDE
COOLING

1000

800
I25*C

600

400
4

678910

CYCLES

30

20

40 50 60 70

AT 60 H r

MAXIMUM ALLOWABLE SURGE (NONCURRENT RATING

9.

REPETITIVE) ON-STATE
100

80

'

60
1

40

W
fc

'

L*fl

5\

1-;

10

i
.:*V'

8
s
1$
1

-_J8k

X^\

NOTES:
1. Maximum

<;^

4
Da

MINIMUM GATE SOURCE LOAD

IS

The

3.

Tp

= Rectangular Gate Current Pulse Width.

LINE A T Mlt>IOC-AMP//JMCT-s5ji SEC MIN,

EC

MAX

TIME/

RISE

J 20

SOURCE LOAD
V, 65 a IS MINIMUM 6ATE
=
MIN,
H LINE AT /4t < I00AMP/AIMCT-K 3m SEC
1 1-0* SE : MAX RISE TIME

^, MS' LIt

allowable gate power dissipation = 2 watts.

locus of possible DC trigger points lie outside the

boundaries shown at various case temperatures.

2.

OUS

GA

'E

4
8 TO
T!
>
:ur RE N T-AIMPERES

\o i 090

<

10.

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS
889

C350

10000

68

4 68
--J-

"i

'X

4 6L

-4-

1 f ifil

-!

4 68

T
T

1000

Tjl25'C

.8

^SPC

100

--L

"T

-j

...SINGLE-SIDE

/COOLING

;;;fe tf 1

.2

/
.1

oe
1

[^

-'D0U8LI -a >r
-: COOLING
I

7T
1

TT
|

$
z

Tt

1
1

01

INSTANTANEOUS ON-STATE

11.

.001

01

MAXIMUM ON-STATE CHARACTERISTICS

12.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

OUTLINE DRAWING

TABLE OF DIMENSIONS
R-DIA.

Conversion Table

S-DEEP
SYM

DECIMAL INCHES
MIN
MAX.

.744

.752

.060
.565
1.656

.030

.515

D
E
F
G
H

1.600
.110

40.64
2.794

.031

.017

.330

.057
7.980

.059
8.115

1.447

t
ACCEPTS AMP.
TERMINAL #60598-1
OR EQUIVALENT
H- STRAIGHT LEAD LENGTH,
T

TYP.

202.70

.300

3.479

MM
MAX.
19.101

1.524
14.351

42.06

.432
1.449
206.11

7.620
3.886

K
L

.137

.153

.065

.245

.070
.260

N
P

.120

.140

1.090

1.125

.135

.145

.067

.083

.340

8.636

.186

.189

4.724

4.801

LEADS

-SURFACE CREEPAGE

I
FOR MOUNTING HARDWARE SEE SELECTOR GUIDE

890

METRIC
MIN.
18.897
.762
13.081

1.651

1.778

6.223
3.048
27.69
3.429

6.604

1.701

||

100

10

TIME (SEC)

VOLTAGE - VOLTS

3.556

28.55
3.683
2.108

HIGH SPEED

C354/C355

Silicon Controlled Rectifier

600

275A RMS

Volts

The General Electric C354 and C355 Silicon Controlled

signed for power switching at high frequencies. These are
Pak devices employing the field-proven amplifying gate.

AMPLIFYING GATE /fi\

Rectifiers are deall-diffused Press-

FEATURES:

Fully characterized for operation in inverter and chopper applications.

High di/dt

High dv/dt capability with selections available.

Rugged hermetic glazed ceramic package.

ratings.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM l

VOLTAGE, V RRM l

Tj = -40C to +125C

Tj = -40C to +125C

TYPES

C354A,
C354B,
C354C,
C354D,
C354E,
C354M,
1

C355A
C355B
C355C
C355D
C355E
C355M
ms max.

200 Volts
300
400
500
600
720

pulse width.

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
2
I

(for fusing) for times

(for fusing) for times

2
I

>
>

Tj = +125C

100 Volts
200
300
400
500
600

100 Volts
200
300
400
500
600

Half sine wave waveform 10

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM

1,800 Amperes
1,700 Amperes

1.5 milliseconds

9.500

8.3 milliseconds

13,500

Critical Rate-of-Rise

of On-State Current, Non-Repetitive

Critical Rate-of-Rise

of On-State Current, Repetitive

RMS Ampere 2
RMS Ampere 2

Seconds

Seconds
800 A/jus f
500 A/jus f

Average Gate Power Dissipation, Pq(av)

Storage Stemperature, T stg

2 Watts
-40C to +150C

Operating Temperature, Tj

-40C to +125C
800 Lbs. + 10%

Mounting Force

3.56
fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5/iS short circuit trigger current rise time.

891

KN

Vdrm;

20

10%
volts,

C354/C355

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Current

MIN.

TYP.

Irrm

MAX.

UNITS

12

mA

TC = +25C,

17

mA

T c = 125C, V = V DRM = V'rrm

.26

C/Watt

and

TEST CONDITION

V DRM

V RRM

Idrm
Repetitive Peak Reverse
and Off-State Current

!rrm

12

and

Idrm
Thermal Resistance

R,-0JC

.13
Critical Rate-of-Rise of

dv/dt

V/Msec

Off-State Voltage (Higher

Values May Cause Device

Switching)

Single-Side Cooled

Double-Side Cooled

Tj = +125C, Gate Open. VDRM = Rated,

Using Linear or Exponential Rising

DRM

Exponential dv/dt =

200
100
Higher

dv/dt selections

100

Gate Trigger Current

Gate Trigger Voltage

GT

V GT

(.632)

500
300

minimum

Holding Current

DC

Waveform.

C354
C355

DC

Junction-to-Case
Junction-to-Case

50

150

100

200

30

120

3.0

5.0

1.25

3.0

2.2

3.0

consult factory.

mAdc

T c = +25C, Anode Supply = 24 Vdc.

Initial

On-State Current = 2 Amps.

mAdc

Tc =

+25C,

Tc =

-40C,

T c = +125C,
Vdc

Tc
Rl

VD
VD
VD

= 6 Vdc,
= 6 Vdc,

-40Cto 0C,
3

RL
RL
RL

= 6 Vdc,

Ohms

VD

= 3

Ohms

= 3

Ohms

= 6 Vdc,

T c = 0C to +125C, V D =
R L = 3 Ohms

0.25

= 3 Ohms

Vdc

Tc = +125C, V DRM R L = 1000 Ohms

,

Peak On-State Voltage

V TM

Volts

T c = +25C, I TM = 500 Amps. Peak

Duty Cycle

Turn-On Delay Time

td

Msec

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

Msec

0.1

Msec

(1)

T c = +125C
!tm = 50 Amps.
V R = 50 Volts Min.

(3)
(4)

C354
C355

12

(5)

10
20

(6)

(7)

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

Msec

^(diode)

v drm

(Reapplied)
Rate-of-Rise of Reapplied Off-State

Voltage = 20 V/Mec (linear).

Commutation di/dt = 5 Amps/Msec.
Duty Cycle < .01%

(1)

Tc =+125C

(3)

Ixm = 150 Amps.

VR =
V DRM

Volt

(Reapphed)

Reapphed Off-State
Voltage = 20 V/Msec (linear)

(5) Rate-of-Rise of

12
15

(6)

(7)
(8)

maximum

time

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

(4)

(Consult factory for specified

rise

(8)

(2)

C354
C355

.01%

T c = +25C, I T = 50Adc, V DRM Gate

Supply: 20 Volt Open Circuit, 20 Ohm,

(2)

Voltage)

<

turn-off time.

892

Commutation di/dt =
Duty Cycle < .01%

Amps/Msec

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

SINE

C354/C355

WAVE CURRENT RATING DATA

DOUBLE-SIDE COOLING

I0A 'Mi

IC

UJ
tE

PULSES p fB
w

Ui
0.
j|

1000

L* pr-

"i^_

,r"

i-

-".

1000

;_.

'.^.400

UJ

250C

to
1

g
<
,. 5000

Q.

100

1000

100

10,000

PULSE BASE WIDTH- MICROSECONDS

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65 C)

1.

/'
100/k/M

| woo

5"

\-A
/

'

"r

,r-

**
-^k* S

,->

s^c 1/,
1

>

1000

"^400

60

250C

I00

1000

100

10,000

PULSE BASE WIDTH-MICROSECONDS

2.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)

893

NOTES:
Switching voltage <400 volts.
Maximum ckt. dv/dt =100 volts/jusec
Reverse voltage applied = Vr
400 volts.
Required gate drive:
20 volts, 65 ohms, 1 jusec rise time for less than 100 amps/
Msec

2.

<

3.

4.

20

volts,

20 ohms,

.5 Msec rise

time for greater than 100

amps/Msec
R-C Snubber

ckt. = 0.25Mf, 512

Double-Side Cooled
Max. energy dissipated during reverse recovery to be 15%
of total W-S/P shown in chart 5 or 0.03 W-S/P whichever

5.
6.
7.

is least.

Values of W-S/P are for Tj =

8.
100

25C.

1000

PULSE BASE WIDTH- MICROSECONDS

ENERGY PER PULSE FOR SINUSOIDAL PULSES

3.

RECTANGULAR WAVE CURRENT RATING DATA

DUTY CYCLE - 50%

DUTY CYCLE - 25%

800

600

600
i-

400

400

6C -Hz
*

PULSEJ PER SEC0NC

300

[OC

_-

3z

300
Ul

(00

1000 Hi

200

200

I000

ion

10

20

30

40

60

5
10
20
30
40
60
80 100
RATE OF RISE ON-STATE CURRENT AMPERES PER MICROSECOND

80 I00

RATE OF RISE ON-STATE CURRENT-AMPERES

4.

to
UJ
or

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

6.

800
800

600

600

z 400
UJ
ct

400

300
o
UJ
h-

200

PULSE S PEf
SECON

300

PULSES PER SECON

D

,6C>

-60

4_00

o
<

~400

I50

UJ

__

IC

150

00

_'0()0

I00

80
5
10
20
30
40
60
80 IOO
RATE OF RISE ON-STATE CURRENT AMPERES PER MICROSECOND
5.

100

10

20

30

40

60

80

100

PEAK ON -STATE CURRENT AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

7.

894

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 90C)

WATT- SECONDS PER PULSE

C354/C355
1

WATT- SEC /PULSE

600
500

0.25

0.2C

"V kpV*

400

0.4

0.30

O.S

O.B

0.6

1.0

I.S

jxe^

^^

til s
S5

!ai4

aoa

0.06

0.04

$s ^<

003
0.02

20

40 50 60

30

400 600 BOO IK

80 100
200
PULSE BASE WIDTH-MICROSECONDS

ENERGY PER PULSE

AND PULSE WIDTH

8.

4K 5K 6K

3K

2K

BK IOK

PEAK CURRENT

VS.

= 100 A//Usec)

(di/dt

I000
I

800

WATT -SEC /PULSE

600

02

0.I5

03

0.25

0.4

0.6 0.8

0.5

I.O

t.s

0.I

400

"V^v

ooe

300

006
200
0.05

SJJ4
I00

003

80

60
50

0.02
0.0I5

40
30

20
I

PULSE BASE WIDTH -MICROSECONDS

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 25 A//xsec)

9.

800

WATT- SEC/ PUL! E

600
500

0.25
' 20
1

\.

0.3

0.4

"%V

0.5

^V

0.8

1.0

^
1.5

o.ia'O^s
v,

300
OB
O.W

2 200
<

0.0

03^
002

ioo

uj

BO
0.015,,,^
0.01

<

^^>n

50

40

30

o
<

20

T^

20

10.

30

40 5060 80

200
400 600 800
PULSE BASE WIDTH -MICROSECONDS

100

2K

3K

4K 5K 6K

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5 A/^sec)

895

8K IOK

C354/C355
40
i

1000

30

son
4nn

20

&

^?

A, _L5es
-+
l

?on

%
100

O
"

?o

\zszj

$<

-40C

^25C

-<i.
-->

4sk^

25

i
10

-^
W

*a*v

fin

40

&,

>

20V,

-"

200

LOADLINE

11.

.3

.2

0.1

INSTANTANEOUS ON-STATE VOLTAGE

VOLTS

.4

.5.6.7.8

INSTANTANEOUS GATE CURRENT

MAXIMUM ON-STATE CHARACTERISTICS

45678

10

AMPERES

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

12.

3000

1.0

20,000

15,000

UJ
CO

CM

2000
IN

<
1-

T A-

Tl

"

40 : to + 25C

8,000

f~

6,000

<n
i

2<n

ow
Q:

J
>

UJUJ

>o-

UJ

INITIAL Tj

-40"C T0+I25C

4,000

*U1

1000

Z^UJ

800

UJ

M^
<

600

OOO

<Z

UJ

UJO

a.

6 7 8

20

10

30

40 50 60

1.000
2

NUMBER OF CYCLES AT 60 HERTZ

13.

SURGE (NON-REPETITIVE) ON-STATE

CURRENT

14.

CO 3LE0

*<

1%

CO oled
OOL &-K,

.01
.1

TIME
15.

MILLISECONDS

S\0?

.01

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT LOAD 2 t RATING

kQV^

.001

56789

PULSE BASE WIDTH

10

SECONDS

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

896

10

C354/C355

RECOVERED CHARGE DATA

400-C^

^d>>.
~s>
^ -""""z

"

^-^nO

o&&*^-

REVERSE

16.

di/dt -

10

20

30 40 50 60 80 100

AMPERES PER MICROSECOND -

TYPICAL RECOVERED CHARGE AT 125 C

SINEWAVE CURRENT WAVEFORM

OUTLINE DRAWING
TABLE OF DIMENSIONS
Conversion Table

R-DIA.

S-DEEP

SYM
A
B
C
D
E
F
G
H

DECIMAL INCHES
MAX.
MIN
.744

.752

.030

.060
.565
1.656

.515
1.600
.110

.031

.017

.057
7.980

.059

t
ACCEPTS AMP.
TERMINAL #60598-1
OR EQUIVALENT
H- STRAIGHT LEAD LENGTH,

TYP.

LEADS

T -SURFACE CREEPAGE

897

8.115

METRIC
MIN.
18.897
.762
13.081

40.64
2.794
.330
1.447

202.70

.300

3.479

MM
MAX.
19.101

1.524
14.351

42.06

.432
1.449
206.
1

7.620
3.886

.137

.153

.065

.245

.070
.260

N
P
R

.120

.140

1.090

1.125

.135

.067

.340

8.636

.186

.189

4.724

4.801

1.651

1.778

6.604
3.556

.145

6.223
3.048
27.69
3.429

.083

1.701

28.55
3.683
2.108

HIGH SPEED
Silicon Controlled Rectifier
225A RMS

1200 Volts

AMPLIFYING GATE

The General

Electric C358 Silicon Controlled Rectifier is designed for power

switching at high frequencies. This is an all-diffused Press-Pak device employing the field-proven amplifying gate.

FEATURES:

Fully characterized for operation in inverted and chopper applications.

High di/dt

High dv/dt capability with selections available.

Rugged hermetic glazed ceramic package.

ratings.

500

v\
14

4O0

400

0.

5
i-

UI

X 300

300

in

~1

o 200
<

SINUSOIDAL

UJ

iO

RECTANGULAR WAVEFORM

141

50% DUTY CYCLE

RA1ruF)E

100

<

CYCL E
180 CONDUCTION

a.

4
I
q

WAVEFORM

50% DUTY

lij

d Ait

100

VOLT B LOCK ING

-25 AMPS /fL SEC

di/dt

800 VC LT BL OCKING

<

600

1000

FREQUENCY

IN

2000

1000

FREQUENCY

Hz

IN

Hz

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE. V DRM l

VOLTAGE, V RRM

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

500 Volts
600
700
800
900
1000
1100
1200

500 Volts
600
700
800
900
1000
1100
1200

600 Volts
720
840
960
1080
1200
1300
1400

TYPES

C358E

C358M
C358S

C358N
C358T
C358P
C358PA
C358PB

I
1

Half sine wave waveform 10

ms max.

pulse width.

898

IMOIM-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM !

C358
225 A"1? 6168
1600 Amperes
1500 Amperes

RMS On-State Current, It(rms)

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
2
I
I

>
times >

(for fusing) for times

1.5 milliseconds

5,200

(for fusing) for

8.3 milliseconds

10,500

Critical Rate-of-Rise

(RMS Ampere) 2 Seconds

(RMS Ampere) 2 Seconds
800 A//zs t
500 A/ms t
^ Watts

of On-State Current, Non-Repetitive

Critical Rate-of-Rise of On-State Current, Repetitive

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

-40 C to

Operating Temperature, Tj

-40C to +125C

+150C

800 Lbs. 10%

3.56 KN 10%

Mounting Force

tdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5ms short circuit trigger current rise time.

Vdrm;

20 volts,

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Current

Irrm

C358E

Idrm

MIN.

TEST CONDITIONS

UNITS

C358N
C358T
C358P
C358PA
C358PB
Repetitive Peak Reverse
and Off-State Current

Irrm

C358E

Idrm

10

500 Volts

10

600

10

700

10

800

900

1000

1100

1200

C358S

C358N
C358T

C358P
C358PA
C358PB

VRRM

Rsjc

200

dv/dt

500 Volts

12

15

12

15

600

12

15

700

12

15

800

12

15

900

12

15

1000

12

17

1100

12

18

1200

.12

.135

.15

.26

500

C/Watt

Junction-to-Case

Junction-to-Case
V/,usec

Off-State Voltage (Higher

may cause device
switching)

Double-Side Cooled
Single-Side Cooled

Tj = +125C, Gate Open. VDRM = Rated

Linear or Exponential Rising Waveform.
Exponential dv/dt =

Higher

Holding Current

Ih

DC

Igt

minimum

dv/dt selections available

VGT

VTM

^2

(.632)

consult factory.

100

500

mAdc

T c = +25C, Anode Supply = 24 Vdc.

50

150

mAdc

75

300

15

125

1.25

3.0

0.15

2.8

3.5

Tc
Tc
Tc
Tc
Tc
Tc
Tc

Initial

Peak On-State Voltage

VDRM

Tj = 125C,

values

DC

and

C358M

Gate Trigger Voltage

vrrm

mA
-

Gate Trigger Current

VD rm

Tj = +25C,

and

C358S

Critical Rate-of-Rise of

MAX.

mA

C358M

Thermal Resistance

TYP.

Vdc

Volts

On-State Current = 2 Amps.

+25C,

-40C,

= 6 Vdc,

= 6 Vdc,
= 6 Vdc,

= +25C,

Duty Cycle

899

VD
VD
VD

R L = 3 Ohms
R L = 3 Ohms
= +125C,
R L = 3 Ohms
=-40C to 0C, VD = 6 Vdc, R L = 3 Ohms
= 0C to +1 25C, VD = 6 Vdc, R L = 3 Ohms
= 125C, VDRM R L = 1000 Ohms
=

<

TM = 500 Amps.
.01%.

Peak.
|

C358

CHARACTERISTICS
TEST

SYMBOL

Turn-On Delay Time

MIN.

TYP.

MAX.

UNITS

0.5

td

(continued)

TEST CONDITION

Tc = +25 C,

(i sec

IT

= 50 Adc,

Supply: 20 volt open

VDRM

circuit,

Gate
20 ohm,
,

0.1

max. rise time, ft, ttt

(1) T c = +125C
(2) I TM = 150 Amps.
(3) V R = 50 Volts Min.

/zsec

Conventional Circuit

//sec

*q

Commutated Turn-Off
Time (with Reverse

Voltage)
Faster

Maximum

25

40

VDRM

(Reapplied)
Rate-of-Rise of Reapplied Off-State
Voltage = 200 V/fisec (Linear)
(6) Commutation di/dt = 5 Amps/jusec.
(7) Repetition Rate = 1 pps.
(8) Gate bias during turn-off interval =
(4)
(5)

Turn-

Off Times Available,

Consult Factory

volts,

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

40

jusec

(1)

(diode)

(2)

(3)

100 ohms

T c =+125C
I t m = 150 Amps.
V R = 1 Volt

V DRM

(Reapplied)
Rate-of-Rise of Reapplied Off-State
Voltage = 200 V/Atsec (Linear).
(6) Commutation di/dt = 5 Amps/jUsec.
(7) Repetition Rate = 1 pps.
(4)

(5)

(8)

(Consult factory for specified

maximum

Gate bias during turn-off interval =

volts, 100 ohms

turn-off time.

tfDelay time may increase significantly as the gate drive approaches the I
GT of the device under test (D
ttt^nent nsetime as measured with a current probe, or voltage risetime across
a non-inductive resistor.

0000*

UT

V,,
s^c
**-

-^w

^N V S

"\,

S400

S.

60

VJ000

>500

..

100

5C 00

10

100

1000

PULSE BASE WIDTH-MICROSECONDS

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

900

I0K

SINE

1000

^^_

WAVE CURRENT RATING DATA

C358

+4**,,

-^^*

=^

k^ */f

"^^.71

N.

000

SC

"s400

.^2500

10^

I0K

1000

100

PULSE BASE WIDTH -MICROSECONDS

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)

*^
UJ

a.
UJ
a.

<t

\%. -

t*

t-

~*~*>^

1000 """~

A,

/C

^<.

'

k80

\AC
y2.0

6
^"S!:

SP5

<
UJ

-V

VN

,o

\o.

25

N.

3.0 5

ift4.

100

1000

100

10

IOK

PULSE WIDTH-MICROSECONDS
3.

ENERGY PER PULSE FOR SINUSOIDAL PULSES

NOTES:
(Pertaining to
1.
2.

3.

4.

Sine and

Rectangular Wave Currant Ratings)

Switching voltage = 800 volts.

5.

R-C Snubber

= 200 volts/jusec.
Reverse voltage applied = 50V
800 volts.
Required gate drive:
20 volts, 65 ohms, Tjusec rise time for less than 100

6.

Double-Side Cooled.

7.

amps/jusec.

8.

Max. energy dissipated during reverse recovery to be

15% of total W-S/P shown in chart 5 or 0.03 W-S/P
whichever is least.
Values of W-S/P are for Tj = 125C.

Maximum

ckt. dv/dt

<Vr <

20 volts, 20 ohms,
100 amps/iisec.

.5/Jsec rise

ckt.

.2/uF,

5n.

time for greater than

I
901

C358

TRAPEZOIDAL WAVE CURRENT RATING DATA

DUTY CYCLE - 50%

DUTY CYCLE - 25%

CO

500

500

Ui
Q.

UJ
Q.

2
<

400
300

<

Pulsus k&k SECOND

-c 1000
OO

50

50

400

iqoo

300
1

200
3

ON-STATE

2500

,250O

CURREN

Ol

150

5C 00

OO

ULSEJ

LZ R SECOND

5QQQ

100

PEAK

LU
a.

40
60 80 100
RATE OF RISE ON-STATE CURRENT- AMPERES
PER MICROSECOND
7

10

15

20

30

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

6.

7
10
15
20
30 40
60 80 100
RATE OF RISE ON-STATE CURREN T- AMPERES
PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

500
co
ui
2j
a.

<

"400

500

400

c?300

300
200

50

s
<
H200
z
F

UL SES PER SECONC

1000

-C

2500

UJ
a:
CE
Z3

50

1000

100

2500

^-SEs Bt

^ColID

<
Lil

5000

UJ
a.

50
7
5
10
20
30 40
60 60
RATE OF RISE ON-STATE CURRE NT - AM PERES
PER MICROSECOND

5000

< 50

100

7
10
20
30 40
60 80 100
RATE OF RISE ON-STATE CURRENT-AMPERES
PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

7.

I
902

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

C358
WATT-SECOND PER PULSE
*

N.

600

"*

^s,^
7.0WATT-SEC
.b

X.

300

7.0

r\i.o
5

200
s,

100

^_

>v

25

0.1

80

.oe

60
40

N^

PULSE BASE WIDTH-MICROSECONDS

8.

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 100 A/;usec)

*V

WATT-SEC
S^ PER PULSE
7.0

hs?
400
300

.0

v^

^X^
L

40

60

80 I00

o>

o.\

c .oe

200

PULSE BASE WIDTH -MICROSECONDS

9.

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 25 A/^sec)

800

""

7.0WATT-SEC

600

^D

vi

400

Q.

I.O

3.5

"v^

300
0.25

'

J.

35

Si

S.
40

60

80 I00

200

400

600

I000

\
\

4000 6000

800

10,000

8000

PULSE BASE WIDTH -MICROSECONDS

10.

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5 A//xsec)

903

C358
40
Zb'C,
'

& ** W.

30

I25C

1000

20

*
-f

-^

4gvj
-40"C

LOCUS OF
POSSIBLE
DC
TRIGGER

POINTS

100
f

+\

1
1

25CJ J25C

10,

0C

125 C

23456789

.2

.10

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

.4

.3

.6

.8

2.0

1.0

3.0 4.0

6.0 8.0 10.0

INSTANTANEOUS GATE CURRENT -(AMPERES)

MAXIMUM ON-STATE CHARACTERISTICS

11.

U-20V, 2011 LOADLINE

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

12.

2000

I700

15,000

12,500

ft

10,000

OJ

lu

I500

5
<

cT
1

*<

I200

5000

4000

3000

+I25C

INI

I000

HALF

OO

800

AMPERES

ON-STATE

CURRENT

SINEWAVE

4C c

INIT IAL Tj

'

'0

+ 125
PEAK

Ol

600
3

1.5

40

20

10

DD

60

13.

PULSE BASE WIDTH

SURGE (NON-REPETITIVE) ON-STATE CURRENT

14.

.5

NUMBER OF CYCLES AT 60 Hz

10

MILLISECONDS

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING
l

to

I00

80
3 60

500
400
300
200

500
400
300
200
Itm-s

8 40
O
cr

500
-400
300

\
-""gi^d

-"^j?

REVERSE
15.

di/dt -

10

20

TYPICAL RECOVERED CHARGE

SINE

40

60

80

I00

AMPERES PER MICROSECOND

REVERSE
16.

(125C)

WAVE CURRENT WAVEFORM

10

20

40

60

AMPERES PER MICROSECOND

TYPICAL RECOVERED CHARGE

SINE

904

di/dt -

(25C)

WAVE CURRENT WAVEFORM

80 100

C358

COOLED

0\

J#^

2*

S\OE

CO dlED

'ooo^'

.001

.01

.1

TIME
17.

10

SECONDS

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

OUTLINE DRAWING
TABLE OF DIMENSIONS
Conversion Table

SYM
A
B
C

D
E
F
G
H

.744

.752

.030

.060
.565
1.656

.515
1.600

METRIC
MIN.
18.897
.762
13.081

MM
MAX.
19.101

1.524
14.351

42.06

.110

40.64
2.794

.031

.017

.330

.432

.057
7.980

.059
8.115

1.447

1.449
206.

K
L

.137

.153

.065

.245

.070
.260

N
P

.300

202.70

3.479

7.620
3.886

1.651

1.778

6.223
3.048
27.69
3.429

6.604

.120

.140
1.125

1.090
.135
.067

.340

6.636

.186

.189

4.724

4.801

ACCEPTS AMP.
TERMINAL #60598-1
OR EQUIVALENT
H- STRAIGHT LEAD LENGTH,

DECIMAL INCHES
MIN
MAX.

.145

.083

1.701

3.556

28.55
3.683
2.108

I
TYP.

LEADS

T -SURFACE CREEPAGE

905

HIGH SPEED
Silicon Controlled Rectifier
600

275 A

Volts

C364/C365

RMS
AMPLIFYING GATE

The General Electric C364 and C365 Silicon Controlled

signed for power switching at high frequencies. These are
Pak devices employing the field-proven amplifying gate.

3.

Rectifiers are deall-diffused Press-

FEATURES:

Fully characterized for operation in inverter and chopper applications.

High di/dt

High dv/dt capability with selections available.

Rugged hermetic glazed ceramic package.

ratings.

MAXIMUM ALLOWABLE RATINGS

TYPES

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM l

VOLTAGE, V BRM 1

Tj = -40C to +125C

Tj = -40C to +125C

C364/C365A
C364/C365B
C364/C365C
C364/C365D
C364/C365E
C364/C365M
C365S

100 Volts
200
300
400
500
600
700
800

C365N
1

Half sinewave waveform, 10

ms max.

100 Volts
200

300

400
500

600
700
800

On-State Current, I T (rms)

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
2
t

(for fusing) for times

(for fusing) for times

2
I

>
>

1.5 milliseconds

8.3 milliseconds

Critical Rate-of-Rise

of On-State Current, Non-Repetitive

Critical Rate-of-Rise

of On-State Current, Repetitive

accordance with

to +150

-40C to +125C
800 Lbs. 10%
3.56 KN + 10%

Mounting Force Required

ohms

275 Amperes
1800 Amperes
1700 Amperes
2
9,500 (RMS Ampere) Seconds
2
13,500 (RMS Ampere) Seconds
800 A/jus t
500 A/jus t
-40

Operating Temperature, Tj

20

200 Volts
300
400
500
600
720
840
960

2 Watts

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

j-di/dt ratings established in

Tj = +125C

pulse width.

RMS

NON-REPETITIVE PEAK
REVERSE VOLTAGE, Vrsm 1

EIA-NEMA

Standard RS-397, Section 5.2.2.6 for conditions of max. rated Vtjrm; 20

gate trigger source with 0.5 ms short circuit trigger current rise time.

906

volts,

C364/C365

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

Irrm

"

TYP.

MAX.

UNITS

12

mA

TEST CONDITION
Tj = +25 C

and

Idrm
Repetitive Peak Reverse
and Off-State Current

12

Irrm

17

mA

Critical Rate-of-Rise of
Off-State Voltage
(Higher values may cause
device switching)

DC

Rejc

dv/dt

DC

Gate Trigger Voltage

.12

.135

.15

.26

200

500

C/Watt

V/jusec

Igt

VGT

minimum

dv/dt selections available

40

1000

Tj = +125C, Gate Open. VDRM = Rated

Linear or Exponential Rising Waveform.

mAdc

VTM
td

Maximum

Turn-

consult factory.

T c = +25 C C, Anode Supply = 24 Vdc.

Initial

On-State Current = 2 Amps.

Tc =

+25C,
-40C,

250

100

400

Tc =

=
T c = +125C, V D = 6 Vdc,
T c = -40C to 0C, V D = 6 Vdc,
R L = 3 Ohms

25

175

1.25

3.0

mAdc

Vdc

T c = 0C

= 6 Vdc,
= 6 Vdc,

to +125C,

VD

RL
RL
RL

= 3

Ohms

= 3

Ohms

Ohms

= 6 Vdc,

Ohms
125C, V DRM R L = 1000 Ohms

Tc =

1.9

2.6

Volts

T c = +25C, I TM = 500 Amps. Peak

Duty Cycle < .01%

"

0.5

"

//sec

T c = +25C, I T = 50 Adc, VDRM Gate

Supply: 20 Volt Open Circuit, 20 Ohm,
,

(1)

(2)

(3)

C365

10

15

20

(4)

(1)

20

(4)

(8)

tt.ttt

T c = +125C
Ijm = 150 Amps.

V R = 50 Volts Min.
V DRM (Reapplied)

Tc = +125C
Itm = 150 Amps.

VR =
VDRM

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms.

f Consult factory for specified maximum Turn-Off Time.

ft Delay time may increase significantly as the gate drive approaches the IGT f tne Device Under Test,
ff f Current risetime as measured with a current probe, or voltage risetime across a non-inductive resistor.

907

time,

1 Volt
(Reapplied)
(5) Rate-of-Rise of Reapplied Forward
Blocking Voltage = 200 V//isec (linear)
(6) Commutation di/dt = 5 Amps/jusec
(7) Repetition Rate = 1 pss.

(3)

15

rise

Rate-of-Rise of Reapplied Off-State

Voltage = 200 V/fisec (linear)
(6) Commutation di/dt = 5 Amps//xsec.
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
Volts, 100 Ohms

(2)

C364

max.

(5)

jusec

tq(diode)

C365

VD
VD

= 3

Off Times Available,

Consult Factory

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

(.632)/t

70

^sec

C364

VD rm

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

Faster

V RRM

Junction-to-Case (Double-Side Cooled)

0.1 Msec

Voltage)

0.15

Turn-On Delay Time

V DRM

Junction-to-Case (Single-Side Cooled)

RL
Peak On-State Voltage

V RRM

Exponential dv/dt =

Ih

Gate Trigger Current

Tj = 125C

Higher

Holding Current

V DRM

and

Idrm
Thermal Resistance

C364/C365
5000

_^ S^
*^
^<^

1000

'

40
i

30

^
A
//
//
7

>

~~|

2^4.

/
;

-1

!5C

25<5

'

%&
j
*/

"-+

s
'

<**
%
/

O
3

^ *W

~~

*>

LOCUS
40C POSSIBL r\

100

D.C

TRIGGEfi
3

\
+

I25C

n.

23456789

.6

GATE

2.

WAVE CURRENT RATING DATA

kr<6
^- ^~

?
'

.?,.

."-^

^=x

"

'o

60

500

2.5 K

300
5K

200
IOK

20
ion

20

30 40 5060 80 100

200

300 400 600 800 1000

2000 30004000 8000

10,000

PULSE BASE WIDTH-MICROSECONDS

3.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

\
^

800

\9
.

V
..

**

>

S^
s^

20

30 40

Af

1^'

N IK
"^

Ns
1

N 500

S,
^60

^200

200

300 400 600 800 1000

2000 3000

PULSE BASE WIDTH-MICROSECONDS

4.

5K

60 80 100

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)
908

'

20

3.0

40

6.0

8.0

10.0

CURRENT (AMPS)

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

3000

BOO
700
600
500
400

20H

1
8 10

INSTANTANEOUS

'fiXX

20 V.

LOAD LINE

MAXIMUM ON-STATE CHARACTERISTICS

SINE

J\ *,

25C

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

1.

6000

10,000

C364/C365
NOTES:
(Pertaining to Sine
1.

2.
3.

'

'

and Rectangular Wave Current Ratings)

Switching voltage = 400 volts.

600 volts.
Reverse voltage applied = Vr
Required gate drive:
20 volts, 65 ohms, 1 Msec risetime for less than 100

<

amps/jusec.

4.
5.
6.

7.

30 40

80 100

60

300 400 600 800 1000

200

4000 6000

20 volts, 20 ohms, .5 Msec risetime for greater than

100 amps/Msec.
RC Snubber ckt. = 0.25 Mf. 5 ft.
Double-Side Cooled.
Maximum energy dissipated during reverse recovery
to be 15% of total W-S/P shown in W-S/P chart or
0.03 W-S/P, whichever is least.
Values of W-S/P are for Tj = 125C.

10,000

PULSE BASE WIDTH-MICROSECONDS

ENERGY PER PULSE FOR SINUSOIDAL PULSES

RECTANGULAR WAVE CURRENT RATING DATA

DUTY CYCLE - 25%

DUTY CYCLE - 50%

1000

1000

900
800

900
800

700

600

700
600

500

500

p III -SES

400

III
III
=ULSES PER SECOND
1

60
400

PER SECO YD

1000

60
300

400

2500

1000

200
2500

5000

5000

oo

10

10

RATE OF RISE OF ON-STATE CURREN T- AMPERES

PER MICROSECONDS
6.

oo

RATE OF RISE OF ON-STATE CURRENT- AMPERES

PER MICROSECONDS

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

8.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

ooo
900
800
700

600

800
7O0
600

500

500

400

400

PULSES PER SEC<2ND

60

400

300
3U

L SES PER SECON D

1000

400
2500
1000

.
10

251X>

10

KX>

RATE OF RISE OF ON-STATE CURRENT- AMPERES

PER MICROSECONDS

lOO

RATE OF RISE OF ON-STATE CURRENT- AMPERES

PER MICROSECONDS

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

9.

909

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

C364/C365

WATT-SECOND PER PULSE

~1
1

IOOO

\v

-=*^

800

"^v

\]
100

Nl^^

** *J~H

-H

^i
%*

"-

\<?A

X'

S ,.

Vs

10.

ENERGY PER PULSE

AND PULSE WIDTH

VS.

ENERGY PER PULSE

VS.

PEAK CURRENT

(di/dt

= 100 A//isec)

<;

\.

3&

^
100

IOOO

PULSE BASE WIDTH-MICROSECONDS

<"

11.

">

S
\

X*

\s

S^

rfffl

= 25 A//usec)

*s

i^

PEAK CURRENT

(di/dt

<p

V*

Sft

AND PULSE WIDTH

"\

>v /

100

I00

IOOO

PULSE BASE WIDTH-MICROSECONDS

N-f1

12.
"

\i'

\^

S?

TIM

V\

^
^v

\l/

IOOO

PULSE BASE WIDTH MICROSECONDS

910

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5 A/jusec)

C364/C365

&S*

J$>

1.5

PULSE BASE WIDTH

13.

CO )UEO

&&^ svtco

3LED

ioo

10

MILLISECONDS

TIME

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING

14.

SECONDS

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

OUTLINE DRAWING

TABLE OF DIMENSIONS
Conversion Table

AUX.

SYM

CATHODE
RED

A
e
c

D
E
F
G
H

DECIMAL INCHES
MAX.
MIN
.744

.752

.030

.060
.565
1.656

.515
1.600

METRIC
MIN.
18.897
.762
13.081

.110

40.64
2.794

.031

.017

.330

.057
7.980

.059

1.447

8.115

202.70

.300

3.479

K
L

.137

.153

.065

.245

.070
.260

MM
MAX.
19.101

1.524
14.351

42.06

.432
1.449
206.
1

7.620
3.886

1.651

1.778

6.223
3.048
27.69
3.429

6.604

.120

.140

1.125

R
S

1.090
.135
.067

.340

8.636

.186

.189

4.724

4.801

.145

083

1.701

3.556

28.55
3.683
2.108

f
ACCEPTS AMP.
TERMINAL #60598-1
OR EQUIVALENT
H- STRAIGHT LEAD LENGTH,

I
TYP. 2

LEADS

T -SURFACE CREEPAGE

911

High Power

Silicon

Controlled Rectifier
1300 VOLTS 400A RMS

AMPLIFYING GATE

The General

Electric C380 Silicon Controlled Rectifier is designed for phase

control applications. This is an all-diffused Press-Pak device, employing
the field-proven amplifying gate.

FEATURES:

High di/dt Ratings

High dv/dt Capability with Selections Available
Excellent Surge and I 2 t Ratings Providing Easy Fusing
Guaranteed Maximum Turn-Off Time with Selections Available

Rugged Hermetic Glazed Ceramic Package

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM l

VOLTAGE. V RRM 1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, Vrsm 1

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300

100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300

200 Volts
300
400
500
600
720
840
950
1075
1200

TYPE

C380A
C380B
C380C
C380D
C380E
C380M
C380S

C380N
C380T
C380P
C380PA
C380PB
C380PC

1325
1450
1550

Half sinewave waveform, 10 msec max. pulse width.

Depends on Conduction Angle. (See Charts 1 and 3)

3500 Amperes
Hz)
TSM (60
3200 Amperes
Peak One- Cycle Surge (Non-Repetitive) On-State Current, I TS m (50 Hz)
800 A/^s
Critical Rate-of-Rise of On-State Current (Non-Repetitive)*
Average On-State Current, It(av)
Peak One-Cycle Surge (Non -Repetitive) On-State Current,

Critical Rate-of-Rise
2
I
I

500

of On-State Current (Repetitive)*

>

(for fusing)

(for times

(for fusing)

(at 8.3 milliseconds)

A/jits

(RMS Ampere) 2 Seconds

2
50,000 (RMS Ampere) Seconds

32,000

1.5 milliseconds)

10 Watts
2 Watts

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pg(av)
Storage Temperature, T stg

-40C to +150C

Operating Temperature, Tj

-40C to +125C

800 Lbs. 10%

3.56 KN 10%

Mounting Force Required

*di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
20 ohms gate trigger source with 0.5 /isec short circuit trigger current rise time.

912

Vdrm

stated above;

20

volts,

CHARACTERISTICS
SYMBOL

TEST
Repetitive Peak Reverse
and Off-State Current

MIN.

C380B
C380C
C380D
C380E

C380M
C380S

C380N
C380T
C380P

C380PA
C380PB
C380PC

10

100 Volts Peak

10

200

10

300

10

400
500

10

10

600

10

700

10

800

900

1000

1100

1200

1300

mA

Idrm

C380S

C380N
C380T
C380P
C380PA
C380PB
C380PC
R0JC

dv/dt

Tj = 125C
Vdrm = v rrm =

200

500

15

20

100 Volts Peak

15

20

200

15

20

300

15

20

400

15

20

500

15

20

600

15

20

700

15

20

800

15

18

900

12

15

1000

11

14

1100

10

13

1200

11

1300

0.19

C/Watt

Junction-to-Case (Single-Side Cooling)

Junction-to-Case (Double-Side Cooling)

0.095
V//usec

Tj = 125C. Gate Open Circuited. V DRM =

Rated, Using Linear oi Exponential Rising

Waveform.
Exponential dv/dt -

switching.)
Higher

Holding Current

minimum

Ih

td

dv/dt selection available

100

mAdc

DC

DC

Gate Trigger Current

Gate Trigger Voltage

*GT

V GT

10

150

20

200

125

1.25

3.0

T c = +25C, Anode Supply = 24 Vdc.

On-State Current = 2.5 Amps.

mAdc

Vdc

T c = -40C

RL

= 3

to +125C,

Circuit

Commutated

VTM
t

2.3

2.85

200

Turn-Off Time

Volts
/Usee

VD

= 6 Vdc,

Ohms

T c = +125C, V D =
Peak On-State Voltage

= (.632)

Tc = +25C, I T = lOOAdc, V DRM = Rated

Gate Supply: 10 Volt Open Circuit, 25
Ohm, 0.1 /isec max. rise time.
T c = +25C, V D = 6 Vdc, R L = 3 Ohms
T c = -40 C, V D = 6 Vdc, R L = 3 Ohms
T c = +125C, V D = 6 Vdc, R L = 3 Ohms

/Jsec

V DRM

consult factory.

Initial

Turn-On Delay Time

C380

Tj = 25C
V DRM = Vrrm =

and Irrm

C380A
C380B
C380C
C380D
C380E
C380M

Critical Rate-of-Rise of
Off-State Voltage. (Higher
values may cause device

TEST CONDITIONS

UNITS

mA

Thermal Resistance

MAX.

Idrm
and Irrm

C380A

Repetitive Peak Reverse

and Off-State Current

TYP.

6 Vdc,

RL

T c = +25C, I TM = 1500 Amps

Duty Cycle < 0.01%.
(1) T c = +120C, (2)
(3) V R = 50 Volts Min.

= 3

Ohms

Peak.

TM = 250 Amps

V DRM

(Reapplied)
(5) Rate-of-Rise of Reapplied Off-State
Voltage = 20Volts//isec (Linear)
(4)

(6)

*Consult factory for

maximum

tq specifications.

913

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms. Duty Cycle < 0.01%.

C380
140

si

20

40

60

80

100

120

140

160

180

200

40

240

220

AVERAGE ON- STATE CURRENT- AMPERES

60

80

100

120

140

160

260

18

AVERAGE ON-STATE CURRENT- AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

120

50

100

150

200

250

300

400

350

50

AVERAGE ON- STATE CURRENT- AMPERES

3.

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

100
150
200
250
300
AVERAGE ON -STATE CURRENT - AMPERES

320

600

400

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

4.

DC

350

100%^

280

240

500

33%

ISO"
B:

25%

200

400
90*

12*%

60*

VIO

CONDUCTION
AN GLE 3C *

DUTY CYCL E=6.2 5%/

120

200

100

80

40

100

200

300

"

400

AVERAGE ON-STATE CURRENT- AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

6.

914

40
80
120
160
AVERAGE ON-STATE CURRENT- AMPERES

200

MAXIMUM ON-STATE POWER DISSIPATION FOR

RECTANGULAR CURRENT WAVEFORM

240

C380
700

1400
180*

1200

100%

600

:o*

I:

90*

500

1000

CONDIJCTK) YANGl-E-30

33%

o
600

DUTY
CYCLE- 12.5%

300

///

200

400

<

/ y

200

400
500
300
200
AVERAGE ON-STATE CURRENT-AMPERES

100

100
200
300
AVERAGE ON- STATE CURRENT- AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

7.

8.

400

MAXIMUM ON-STATE POWER DISSIPATION FOR

RECTANGULAR CURRENT WAVEFORM
(EXTENDED RANGE)

(EXTENDED RANGE)
w 3500

o
o80
feo

3000
>OUBLE-SIDED

40

COOLING

ui
to

ui

2500

20

SINGLE SIDED

2000
10

$8

1500

x 6
T

125* C

1000

UJ
a.

z
<
l-

500

UJ
a:

WIDTH

PULSE

4
5
MILLISECONDS

4
6
8 10
NUMBER OF CYCLES AT

10

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT
FOLLOWING RATED LOAD CONDITIONS

10.

20
60 H 2

40

60

80100

MAXIMUM ALLOWABLE SURGE (NONCURRENT RATING

REPETITIVE) ON-STATE

too

POWER RATINGS

NOTES
MAXIMUM ALLOWS
ABLE GATE POWER
>.
1.

DISSIPATION' 20.

.*

2.

S
3

THE LOCUS OF
POSSIBLE DC
TRIGGER POINTS
LIE OUTSIDE THEBOUNDARIES
SHOWN AT VARIOUS
CASE TEMPERA
TURES.

NOTES:
1. Maximum

-r

RECTANGULAR
GATE CURRENT
PULSE WIDTH.

3.Tp -

allowable gate power dissipation = 2 watts.

DC trigger points lie outside

the boundaries shown at various case temperatures.

2.

The

3.

Tp =

locus of possible

Rectangular Gate Current Pulse Width.

0.5/is max. rise time.

20V.65J1
,dl/dt<IOO
time,
0.1

.2

.4

.6

1.0

2.

Is minimum gate source lobd'llne at

amp/us Tp*5us min.,l.0us max. rise
ii
4.
6. 8 10
20
40 60 60100
|

INSTANTANEOUS GATE CURRENT-AMPERES

11.

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS
915

C380
10,000

5,000

T j-125'C
1,000

500
1.0

"TffT

II II

.8

-ill

"4tt

.6

100
>IN$LE

50

SIDE.

COOKING

- i-.1

.08
.06

10

IN

. -'
* * , '

.04

-+
wu

11

*t toOUBLE S DE COOLING

In
2

INSTANTANEOUS ON-STATE V0LTA6E

12.

01

.008
.006

VOLTS

MAXIMUM ON-STATE CHARACTERISTICS

.005

001

.02

.01

.05

.1

.2

.5

13.

12

J
5

10

JUNCTION-TO-CASE

.001

4==
E
*o^--

800
I

S2

600

W*li
,^""^00*!

400

200

l&ffi^S*

J"< 25C

.zooa

'*''

^,\00>

a
? 00

80
60

40

T^s 25"<

20

10

REVERSE
14.

20
di/dl

50
I

I00

200

500

IO00

AMPERES IfL Sec)

MAXIMUM RECOVERED CHARGE

(SINUSOIDAL WAVEFORM)
OUTLINE DRAWING

R-DIA.

S-DEEP
TABLE OF DIMENSIONS
Conversion Table

DECIMAL INCHES
SYM MIN
MAX.
A
.744
.752
B
.030
.060
C

D
E

.515
1.600

f
ACCEPTS AMP.
TERMINAL # 60598-I
OR EQUIVALENT
H - STRAIGHT LEAD LENGTH,
T -SURFACE CREEPAGE

TYP.

.110

.031

.017

G
H

.057
7.980

.059
8.115

METRIC
MIN.
18.897
.762
13.081

MM
MAX.
19.101

1.524
14.351

40.64
2.794
.330

42.06

1.447

1.449
206.11

202.70

.300

.137

.153

3.479

.432

7.620
3.886

.065

.245

.070
.260

.120

.140

1.125

1.090
.135
.067

.340

8.636

.186

.189

4.724

4.801

LEADS

.565
1.656

20

TRANSIENT THERMAL IMPEDANCE -

.002

1000

.145

.083

1.651

1.778

6.223
3.048
27.69
3.429

6.604

1.701

3.556

28.55
3.683
2.108

FOR MOUNTING HARDWARE SEE SELECTOR GUIDE

916

TIME (SEC)

004

TTj

50 100

High Power

C380X500

Silicon

Controlled Rectifier
500A RMS

800 Volts

The General

Electric

C380X500

Silicon Controlled

Rectifier

is

AMPLIFYING GATE

Sz

designed

low voltage phase control applications; e.g., welding, battery

charging, etc. The SCR has very low power dissipation thereby giving high
current capability on free convection, air-cooled heatsinks.

specifically for

FEATURES:

Low

Excellent Surge and

High di/dt Ratings

High dv/dt Capability with Selections Available
Rugged Hermetic Glazed Ceramic Package

On-State Voltage
I

2
t

Ratings Providing Easy Fusing

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK REVERSE

REPETITIVE PEAK OFF-STATE

VOLTAGE, V DRM 1

TYPE

VOLTAGE. V RRM

Tj = +125C

100 Volts

100 Volts

200
300
400
500
600
700
800

200
300
400
500
600
700
800

200 Volts
300
400
500
600
720
840
950

Half sinewave waveform, 10 msec max., pulse width.

Average On-State Current, It(av>

Peak One-Cycle Surge (Non-Repetitive) On-State Current,

TSM (60 Hz)

Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz)
Critical Rate-of-Rise
Critical Rate-of-Rise
I

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM 1

Tj = -40C to +125C

Tj = -40Cto +125C

C380AX50O
C380BX500
C380CX500
C380DX500
C380EX500
C380MX500
C380SX500
C380NX500

of On-State Current (Non-Repetitive)

of On-State Current (Repetitive)

>

(for fusing)

(for times

(for fusing)

(at 8.3 milliseconds)

1.5 milliseconds)

Depends on Conduction Angle (See Charts 1 and 2)

5500 Amperes
5000 Amperes
800 A/jus t
500 A/tis f
2
75,000 (RMS Ampere) Seconds
2
125,000 (RMS Ampere) Seconds
10 Watts

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)
Storage Temperature, T stg

2 Watts
-40C to +150C

Operating Temperature, Tj

-40C to +125C
800 Lbs. + 10%

Mounting Force Required

3.56
*di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
20 ohms gate trigger source with 0.5 Msec short circuit trigger current rise time.

917

Vjjrm

KN

10%

stated above; 20 volts,

C380X500

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Current

Idrm

C380AX500
C380BX500
C380CX500
C380DX500
C380EX500
C380MX500
C380SX500
C380NX500

!rrm

Repetitive Peak Reverse

and Off-State Current

!drm

C380AX500
C380BX500
C380CX500
C380DX500
C380EX500
C380MX500
C380SX500
C380NX500

!rrm

Thermal Resistance

Critical Rate-of-Rise of

MIN.

TYP.

MAX.

UNITS

TEST CONDITIONS

mA

Tj = 25C

and

V DRM
_

dv/dt

V RRM

10

100 Volts Peak

10

200

10

300

10

400

10

500

10

600

10

700

10

800

mA

Tj = 125C

and

VDRM

_
-

0.095

200

500

Rejc

V RRM

20

100 Volts Peak

15

20

15

20

15

20

200
300
400

15

15

20

15

20

15

20

15

20

0.19

500
600
700
800
C/Watt

Junction-to-Case (Single-Side Cooling)

Junction-to-Case (Double-Side Cooling)
C
Tj = 125 C. Gate Open Circuited. VDR m =
Rated, Using Linear or Exponential Rising

V//isec

Off-State Voltage. (Higher values may cause

device switching.)

Waveform.
Exponential dv/dt -

v DRM

- (.632)

T
Higher

Holding Current

Turn-On Delay Time

td

minimum

dv/dt selection's available

100

mAdc

/usee

consult factory.

T c = +25C, Anode Supply = 24 Vdc,

Initial

DC

DC

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

Igt

VGT

Vtm

10

150

20

200

125

1.25

3.0

1.75

mAdc

Vdc

On-State Current = 2.5 Amps.

T c = +25C, I T = 100 Adc, V DRM = Rated

Gate Supply: 10 Volt Open Circuit, 25 Ohms,
0.1 fisec max. rise time.
T c = +25C, V D =
T c = -40C, V D =
T c = +1 25C, V D =

*q

200

6 Vdc,

T c = -40 C to +1 25C,
R L = 3 Ohms

Tc =

+1 25C,

Volts

Tc =

+125C,

/^sec

(1)

Duty Cycle

Commutated
Turn-Off Time
Circuit

6 Vdc,
6 Vdc,

(2)
(3)

(4)
(5)
(6)

VD
I

<

VD

= 6 Vdc,

RL
RL
RL

= 3
= 3
= 3

Ohms
Ohms
Ohms

= 6 Vdc,

RL =

Ohms

TM = 1500 Amps. Peak.

0.01%.

T c = +120C
I

TM = 250 Amps.

V R = 50 Volts Min.
VDRM (Reapplied)
Rate-of-Rise of Reapplied Off-State
Voltage = 20 Volts/^usec (Linear)
Gate Bias During Turn-Off Interval =
Volts, 100 Ohms. Duty Cycle
0.01%.

<

*Consult factory for

maximum

tq specifications.

918

C380X500

600

400
300
200
200
AVERAGE ON- STATE CURRENT AMPERES

100

1.

J
[

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

500
300
400
200
AVERAGE ON STATE CURRENT- AMPERES

18

600

aolZL*

pKZ^
conduel ion A ijle-30

[400

IX

800

800

600

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

2.

000

100

___

50

33'/?

400

ZOO

200

100

100

80
60

PERCENT DUTY CYCLE =T^

60

40
40
20

u
2
u
3

10

20

400 6008001000
200
4Q 60 80 100
AVERAGE ON-STATE CURRENT -AMPERES

20

10

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

4.

40
200
400 6008001000
60 80 100
AVERAGE ON-STATE CURRENT-AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

*uuo
111

ugOOC
0.

z
?

1000

1-

800

600
K 400

P 200
Ti

CO

T]=25C

= 125

''I
f

1
1

5
8 40
Hi
z
? 20

22

.4

.6
I

5.

.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2 2.4

2.6

NSTANTAN EOUS ON- STATE VOLTAGE -VOLTS

MAXIMUM ON-STATE CHARACTERISTICS

919

2.8

C380X500
ii

ETT

i-i

CHARACTERISTICS AND POWER RATINGS

NOTES
MAXIMUM ALLOW^ABLE GATE POWER
-DISSIPATION- 20
I.

WATTS.
2.

THE LOCUS OF
POSSIBLE OC
TRIGGER POINTS
LIE OUTSIDE THEBOUNDARIES

SHOWN AT VARIOUS

CASE TEMPERA
TURES

NOTES:
1.
Maximum

RECTANGULAR
GATE CURRENT
PULSE WIDTH.

2.

The

allowable gate power dissipation = 2 watts.

locus of possible

0.5/is max. rise time.

20v,65fl

.6

shown

DC

trigger points

outside

lie

at various case temperatures.

minimum] gate source load line at

min.,l.0us max. rise

di/dKlOO amp^ii Tp5/is

'">>
1
L
M
1.0
4.
2
6. a 10
!

.4

is

the boundaries

20

3.

Tp

= Rectangular Gate Current Pulse Width.

40 6080 K>0

INSTANTANEOUS GATE CURRENT-AMPERES

6.

GATE TRIGGER CHARACTERISTICS

AND POWER RATING

ti

.8

.6

TT1

III

1!

mi

11

II

*^S

60
SINfl

.E

COO .INC

SIDE

T^

m
m
m m%

u.

on
.0

^j+rrr
JDOUBLE SIDE COOLING

.04

III

llll

i-

JZz
<ou;
i

Jt

.02

I-

1.5

10

.001.002.005.01 .02

.05

PULSE TIME- MILLISECONDS

7.

.2

I 12

III

.5

10

20

50 100

TIME -SECONDS

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE
FOLLOWING RATED LOAD CONDITIONS

8.

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

OUTLINE DRAWING
R-DIA

TABLE OF DIMENSIONS

S-DEEP

1/2"

PRESS PAK PACKAGE

Conversion Table

DECIMAL INCHES
SYM MIN
MAX.
A

.744

.752

B
C

.030

.060

.515
1.600

.565
1.656

.110

.031

.017

G
H

.057
7.980

.300

I
f

ACCEPTS AMP.
/ T
TERMINAL #60598-1 '
OR EQUIVALENT
H-STRAISHT LEAD LENGTH,
T -SURFACE CREEPAGE

.059
8.115

METRIC
MIN.
18.897
.762
13.081

40.64
2.794
.330
1.447

202.70

MM
MAX.
19.101

1.524
14.351

42.06

.432
1.449
206.11

7.620
3.886

K
L

.137

.153

.065

.245

.070
.260

.120

.140

P
R
S

1.090
.135
.067

1.125

T
U

.340

8.636

.186

.189

4.724

4 801

.145

.083

3.479
1.651

6.223
3.048
27.69
3.429
1.701

1.778

6.604
3.556
28 55
3.663
2.108

A
TYP.
TYP.

FOR MOUNTING HARDWARE SEE SELECTOR GUIDE

LEADS

920

HIGH SPEED
Silicon Controlled Rectifier

C384/C385H

400A RMS

BOO Volts

The General Electric C384 and C385 Silicon Controlled

signed for power switching at high frequencies. These are
Pak devices, employing the field-proven amplifying gate.

Rectifiers are deall-diffused Press-

FEATURES:

Fully Characterized for Operation in Inverter and Chopper Applications.

High di/dt Ratings.

High dv/dt Capability with Selections Available.

Rugged Hermetic Glazed Ceramic Package.

MAXIMUM ALLOWABLE RATINGS

TYPES

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM 1

VOLTAGE, V RRM 1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, Vrrm 1

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

100 Volts

200 Volts
300
400
500
600
720
940
960

100 Volts
200
300
400
500
600
700
800

C384/C385A
C384/C385B
C384/C385C
C384/C385D
C384/C385E
C384/C385M
C385S

C385N
1

REPETITIVE PEAK OFF-STATE

Half sine wave waveform, 10

200
300
400
500
600
700
800

ms max. pulse width.

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
2
I

2
I

(for fusing) for times

(for fusing) for times

>
>

1.5 milliseconds

8.3 milliseconds

Critical Rate-of-Rise

of On-State Current, Non-Repetitivef

Critical Rate-of-Rise

of On-State Current, Repetitivef

3500 Amperes
3200 Amperes
2
35,000 (RMS Ampere) Seconds
2
Seconds
Ampere)
(RMS
50,000
800 A/ms
50 A /^ s

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

'

-^"C

'

'

^ Watts

t0 +150

40 c t0 +125C
800 Lbs 10 %
3.56 KN 10%

Operating Temperature, Tj

Mounting Force Required

I
EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
t di/dt ratings established in accordance with
20 ohms gate trigger source with 0.5ms short circuit trigger current rise time.

921

max. rated

V DR m;

20

volts,

C384/C385

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Current

MIN.

TYP.

!rrm

MAX.

UNITS

10

mA

Tj = +25C

20

mA

TJ = 125C

VDRM

0.19

C/Watt

Junction-to-Case

One-Side Cooled

Junction-to-Case

Double-Side Cooled

and

TEST CONDITIONS

'DRM =

VRRM

Idrm
Repetitive Peak Reverse
and Off-State Current

Jrrm

15

and

'RRM

!drm
Thermal Resistance

R0JC

0.095
Critical Rate-of-Rise

of
Off-State Voltage (Higher

dv/dt

200

500

V/jzsec

values may cause device

switching)

Exponential dv/dt =
Higher

minimum

Holding Current

DC

DC

Gate Trigger Current

Gate Trigger Voltage

H3T

dv/dt selections available

75

500

mAdc

125

300

mAdc

175

500

100

250

VGT

5.0

Initial

On-State Current = 2.5 Amps.

Tc =

+25C,

TC =

-40C,

Voltage)

VD
VD
VD

= 6 Vdc,
= 6 Vdc,
= 6 Vdc,

T c =-40Cto 0C, VD =

RL
RL
RL

6 Vdc,

= 3
= 3

Ohms
Ohms

= 3

Ohms

RL

=3

Ohms

T c =+125C,VDRM ,R L = 1000 Ohms

2.3

2.85

td

Volts

Msec

jusec

Tc = +25C, I TM = 1500 Amps.

15

20

10

<

Peak.

.01%

T c = +25C, IT = 50 Adc, VDRM Gate

Supply: 20 Volt-Open Circuit, 20 Ohm,
,

(1)
(2)

C385
C384

632 )

T c = +25C, Anode Supply = 24 Vdc,

0.1 /isec.

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

consult factory.

Duty Cycle
Turn-On Delay Time

^DRM

T c =0 o Cto+125C,VD =6Vdc,R L = 3Ohms

0.15

V'TM

T c = +125C,
Vdc

3.0

Peak On-State Voltage

T, = +125C, Gate Open. VDRM = Rated

linear or exponential rising waveform.

(3)
(4)

max.

rise

time.

T c = +125C
Itm = 250 Amps.

V R = 50 Volts Min.
vdrm (ReappHed)

Rate-of-Rise of Reapplied Off-State

Voltage = 200 V/Msec (linear)
(6) Commutation di/dt = 12.5 Amps/jusec.
(7) Duty Cycle
.01%
(8) Gate Bias During Turn-Off Interval =
Volts, 100 Ohms.
(5)

<

Conventional Circuit
Commutated Turn-Off

Time (with Feedback

Diode)

/isec

^q(diode)

(1)
(2)

C385
C384

20
10

(4)

(7)
(8)

maximum

T m = 250 Amps.

VR =
VDRM

Volt
(Reapplied)
(5) Rate-of-Rise of ReappHed Off-State
Voltage = 200 V/jUsec (linear)
(3)

(6)

fConsult factory for

T c = +125C

turn-off time.

922

Commutation di/dt =
Duty Cycle < .01%

12.5 Amps/jusec

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

SINE

WAVE CURRENT RATING DATA

DOUBLE-SIDE COOLING

2000 r

PULSES PER SECOND

to
UJ

1500

1000

800

C384/C385

Q.

*sgb
s*f

400
300

40

60

80

100

400

200

600 800

1000

2000

4000

6000

10,000

PULSE BASE WIDTH-MICROSECONDS

1.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

2000

iii...

PULSES PER SECOND

1500

1000

800

"

600

400
300

60

80 100

200

400

600 800 1000

2000

4000

6000

10,000

PULSE BASE WIDTH-MICROSECONDS

2.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)

NOTES:
(Pertaining to Sine

and Trapezoidal Wave Current Ratings)

1.

Switching voltage

2.

RC

3.

< 400

.22>jf,

volts.

5 ohm.

Max. energy dissipated during reverse recovery to be

15% of total W-S/P shown or 0.03 W-S/P whichever
is

4.

Snubber

least.

Values of W-S/P are for Tj = 125C.

923

C384/C385

30

3.

40 5060

80 100 200
400
600 800 IK
70
90
PULSE BASE WIDTH- MICROSECONDS

2K

3K 4K SK 6K 8K IOK

ENERGY PER PULSE FOR SINUSOIDAL PULSES

T
TRAPEZOIDAL WAVE CURRENT RATING DATA
DUTY CYCLE - 50%

DUTY CYCLE - 25%

1000

B 800

60

lu

600

,^ULS ES

ER SE CON D

P JL^SES

6f>

400
400

CC -

.400
F

R SECOND
1000

400

LL.

300

1000

200

100
10

20

30

40

60

80

100

30

40

60

80

100

AMPERES PER MICROSECOND

AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65 C)

4.

20

10

RATE OF RISE OF ON-STATE CURRENT

RATE OF RISE OF ON-STATE CURRENT

6.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65 C)

1000
ui

800

ROO

q:

600

PULS ES P

400

CO

zo-

60

400

PU LSES PER SECC)ND

4C

6C

TT~
J"
4 oo
200

LJ

300
ic

00

200

H50 3

I
5

10

20

30

40

ion

60

80

100

RATE OF RISE OF ON-STATE CURRENT

10

20

30

40

60

80 100

RATE OF RISE OF ON-STATE CURRENT

AMPERES PER MICROSECOND

AMPERES PER MICROSECOND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 90C)

7.

924

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 90C)

WATT- SECONDS PER PULSE

C384/C385

30

8.

400 600 600 IK

200
PULSE BASE WIDTH -MICROSECONOS

40 5060 80 IOO

ENERGY PER PULSE

AND PULSE WIDTH

20

50

40 5060

PEAK CURRENT

(di/dt

= 100 A/Msec.)

400 6O0 600 IK

200
SO 100
PULSE BASE WIDTH-MICROSECONDS

ENERGY PER PULSE

AND PULSE WIDTH

9.

VS.

VS.

3K

4K 5K 6K SK

IOK

PEAK CURRENT

(di/dt

= 25 A/^sec.)

I
50

10.

400 600 600 IK

200
PULSE BASE WIOTH- MICROSECONDS

40 50 60 60 100

3K

4K 5K 6K

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 5 A/jLisec.)
925

8K IOK

C384/C385

40

L_i>

30

U3

20V, 20i}

2 2000
<
k 1000

^/loadlin

ftUU

^ 200

/v

xl

20

(O

2
*

"</,>

^v
<v^

m'

-40C
-25', C

10

NOTES:

^I25C

*X

*v>*x

I25C

&, \jjsfs
-r

D^

Z
3
o

2
z

*\

TRIGGER POINTS LIES OUTSIDE

THE BOUNDARIES SHOWN AT
VARIOUS CASE TEMPERATURES.
I

0.1

.3

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

11.

4.

5.

6.

AMPERES

OS g 40,000

TO +I25C

M 30,000

6,000
,

3.

2.

1.0

60,000
50,000

n
8,000

-40

.6 .7 .8

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS

12.

10,000

.5

INSTANTANEOUS GATE CURRENT

MAXIMUM ON-STATE CHARACTERISTICS

INITIAL Tj

.4

5,000
20,000

4,000
INITIAL Tj

3s
3,000

iS

40">C

TO

+12! c

XJBLE-SIO E COOLING

"

10,000

L00LIMG

UJ

-0=

2,000

8,000

tu

u.

_|UJUIC4.

6,000
5,000

<zih

4,000

5555
3,000
1,000
5

20

10

2,000

60

13.

1.5

SURGE (NON-REPETITIVE) ON-STATE CURRENT

14.

PULSE BASE WIDTH

CYCLES AT 60 Hz

I.OI

11

GV& _JiL

-SIDE

.01

10

.1

TIME

15.

SECONDS

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

926

D
1

COOLED

DO*.

.01

,001

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING
l

S\4

MILLISECONDS

8. 10

RECOVERED CHARGE DATA

C384/C385
500
400
300
200

~
I TM =50
AMPERES m
E
O
=L
=

50

AMPERES

0.6

0.5
0.4

0.3

REVERSE

16.

di/ dt(

10

20

30

AMPERES/^ SEC)

40 50 60 80 100

REVERSE

TYPICAL RECOVERED CHARGE AT 25C

SINEWAVE CURRENT WAVEFORM

17.

8
6
d(/dt

10

30

20

(AMPERES/> SEC

40 50 60 80 I00

TYPICAL RECOVERED CHARGE AT 125C

SINEWAVE CURRENT WAVEFORM

OUTLINE DRAWINGS

TABLE OF DIMENSIONS
Conversion Table
DIA.

DEEP

SYM
A
B
C
D
E
F
6
H

DECIMAL INCHES
MIN
MAX.
.744

.752

.030

.060

.515
1.600

.565
1.656

.110

.031

.017

.057
7.980

.059

40.64
2.794
.330
1.447

202.70

.300

3.479

K
L

.137

.153

.065

.245

.070
.260

MM
MAX.
19.101

1.524
14.351

42.06

.432
1.449
206.
1

7.620
3.886

1.651

1.778

6.223
3.048
27.69
3.429

6.604
3.556
28.55
3.683
2.108

.120

.140

1.125

1.090
.135
.067

.340

8.636

.186

.189

4.724

4.801

ACCEPTS AMP.
TERMINAL #60598
OR EQUIVALENT
H -STRAIGHT LEAD LENGTH,

8.115

METRIC
MIN.
18.897
.762
13.081

.145

.083

1.701

I
TYP.

LEADS

T -SURFACE CREEPAGE

927

HIGH SPEED

C387/C388
Controlled Rectifier

1200 Volts, 500 A RMS

AMPLIFYING GATE-

^T*

Electric C387 and C388 Silicon Controlled Rectifiers are

designed for power switching at high frequencies. These are all-diffused
Press-Pak devices employing the field-proven amplifying gate.

The General

FEATURES:

Fully characterized for operation in inverter and chopper applications.

High di/dt ratings.

High dv/dt capability with selections available.
Rugged hermetic glazed ceramic package having

IMPORTANT:

"

creepage path.

Mounting instructions on the mounting clamp specifications must be followed.

HIGH FREQUENCY CURRENT RATINGS

m

1000

900

N^

800

J_

TO0

600

6
fe

"IT

500

AA
SINUSCHOAL

Y
^

WAVEFORM

400

300

200

V^

800 VOLI SWITCHING

ioo

20 n
lU
II

0.20 jjF

RECTANGULAR WAVEFORM

50% DUTY CYCLE

<

di/dt5A//xSEC

SNUBBER

L_J

r~\

N^

"v
17
l

"

a:

I80*C CONDUCTION

II

65'C CASE TEMPERATURE

--

5n,0.20>iF SNUBBER

II

II

1000

FREQUENCY
1.

IN

Hz

FREQUENCY

MAXIMUM ON-STATE CHARACTERISTICS

Equipment designers can use the C387/C388

2.

SCR

in

Hz

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

demanding

applications, such as:

Choppers

Sonar Transmitters

Cycloconverters

Inverters

Induction Heaters

DC

Regulated Power Supplies

Radio Transmitters

High Frequency Lighting

FOR SINEWAVE OPERATION

Like the Type C140/141,C158/C159and
the

IN

C387/C388 SCR

is

to

DC

Converters

FOR RECTANGULAR WAVE OPERATION

GE now introduces a new, high-frequency rating

C359 SCR's,

C387/C388 SCR, which

rated for:

Peak Current

is:

Peak Current
di/dt

vs.

vs.

Pulse Width

Frequency

of Leading Edge
Frequency

Case Temperature

Duty Cycle

Case Temperature

928

for

C387/C388

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM l

VOLTAGE, V RRM 1

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

500 Volts
600
700
800

500 Volts
600
700
800
900
1000
1100
1200

600 Volts
720
840
960
1080
1200
1300
1400

C387/C388E
C387/C388M
C387/C388S
C387/C388N
C387/C388T
C387/C388P
C387/C388PA
C387/C388PB
1

900
1000
1100
1200

Half sinewave waveform, 10

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM

REPETITIVE PEAK OFF-STATE

TYPES

ms max.

pulse width.

5500 Amperes

Peak One Cycle Surge (Non -Repetitive) On-State Current, I TSM

2
I

(for fusing) for times

(for fusing) for times

2
I

>
>

50,000
120,000

1.5 milliseconds

8.3 milliseconds

Critical Rate-of-Rise

of On-State Current, Non-Repetitive

Critical Rate-of-Rise

of On-State Current, Repetitive

Average Gate Power

Dissipation, Pg(av)

Storage Temperature,

>

(RMS Ampere) 2 Seconds

(RMS Ampere) 2 Seconds
800
500

A//xs t
A/jus t

2 Watts

-40C to +150C

T stg

+125C
2000 Lb. + 10%

.'-40C to

Operating Temperature, Tj

Mounting Force Required

8.9

fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5 /us short circuit trigger current rise time.

KN

10%

Vfjrm; 20

volts,

I
929

CHARACTERISTICS

C387/C388
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

UNITS

20

mA

Irrm
and

!drm
Repetitive Peak Reverse
and Off-State Current

20

Jrrm

45

mA

Critical Rate-of-Rise of

VDRM

R ejc

.05

dv/dt

200

500

.06

C/Watt
V//zsec

vdrm

DC

Gate Trigger Voltage

Peak On-State Voltage

Turn-On Delay Time

Vrrm

Junction-to-Case (Double-Side Cooled)

minimum

dv/dt selections available

200

500

mAdc

Igt

Vgt

VTM

50

150

75

300

15

125

1.25

3.0

0.15

3.3

0.5

td

mAdc

T c = +25C, Anode Supply = 24 Vdc,

On-State Current = 2 Amps.

T c = +25C, V D =
T c = -40 C, V D =
T c = +125C, V D =

6 Vdc,
6 Vdc,
6 Vdc,

RL
RL
RL

= 3
= 3

= 3

Ohms
Ohms
Ohms

T c = -40C to 0C, V D = 6 Vdc,

R L = 3 Ohms
Tc = 0C to +125C, V D = 6 Vdc,
R L = 3 Ohms
T c = 125C, VDRM R L = 1000 Ohms

4.2

Volts

T c = +25C, I TM = 3000 Amps Peak

Duty Cycle <.01%

//sec

/usee

T c = +25C, ITM = 50 Adc, V DRM Gate

Supply: 20 volt open circuit, 20 ohm, 0.1
.

(1)
(2)
(3)

Voltage)

(4)

(.632)

Vdc

C388

Vdrm

consult factory.

max.

jusec

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

Tj = +125C, Gate Open. VDRM = Rated

Linear or Exponential Rising Waveform.

Initial

Gate Trigger Current

VRRM

Exponential dv/dt Higher

DC

Tj = 125C

Off-State Voltage (Higher

values may cause device
switching)

Holding Current

and

!drm
Thermal Resistance

TEST CONDITION
Tj = +25C

15

C387

20

C388

20

30

C387

25

40

rise

time, tt.ttt

Tc = +125C
= 500 Amps.
I TM

V R = 50 Volts Min.
Vdrm (Reapplied)

Rate-of-Rise of Reapplied Off-State

Voltage = 20 V/^isec (linear)
(6) Commutation di/dt = 25 Amps/jusec
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
(5)

Volts, 100

Ohms.

(1) T c = +125C
(2)

(3)
(4)

TM =500 Amps

V R = 50 Volts Min.
vdrm (Reapplied)

Rate-of-Rise of Reapplied Off-State

Voltage = 200 V/jUsec (linear)
(6) Commutation di/dt = 25 Amps/psec
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
(5)

Volts, 100

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

tq (diode)

jusec

(1)
(2)

(3)
(4)

C388

30

C387

40

T c = +125C
I TM = 500 Amps.

V R = 1 Volt
VDRM (Reapplied)

Rate-of-Rise of Reapplied Off-State

Voltage = 200 V/nzsec (linear)
(6) Commutation di/dt = 25 Amps//usec
(7) Repetition Rate = 1 pps.
(5)

(8)

Gate Bias During Turn-Off Interval =

Volts, 100 Ohms

Consult factory for specified maximum t arn-off tinne.

Delay time may increase sigmficantly as the gate d rive apprc aches the Iqt f tn4: Device Under Test.
tt1 Current risetime as measured with a curr ;nt probe or voltag e risetime across a n an-inductive resistor.
t"

930

Ohms

WAVE CURRENT RATING DATA

SINE

'

?e

<

C387/C388

f 0,

tf.*!2i

1000

^**^

*^

1000

2500

2500.

It

^Zi

20ii, 2 M f

10,000

5 X)C

100

1000

100

IOK

PULSE BASE WIDTH ( M SEC)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65 C)

3.

?'

? \i\-

1000

ce

*5^-''

cc

0,

^^-^

Sv60

"

>

^400
.

1000
1

1000

SNUBBER

CI

5fl,

__

2500

*CU T
2 Mf

20O, 2 M f

___
-5000
2500

100

1000

100

IOK

PULSE BASE WIDTH ( M SEC)

4.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)

in
iu

1000

o
mi

1000

100

10

PULSE BASE WIDTH

5.

M SEC)

ENERGY PER PULSE FOR SINUSOIDAL PULSES

931

IOK

C387/C388

RECTANGULAR WAVE CURRENT RATING DATA

DUTY CYCLE - 50%

DUTY CYCLE - 25%

1000

1000

900
800
700
.__

600

fut-si S

900
800
700
600

PER SPr.,.

500

2^m*s

-O/VO

60

500
"

400

1000

400

apr,

1000

2500
2500
10

100

10

6.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

1000

1000

900

900
800

800
700

700
600

600
500

PL i-SE-

fr^5co.vo

500

PL lsej

te^ftc NO

400

100

RATE OF RISE OF ON-STATE CURRENT-(A//U.SEC)

RATE OF RISE OF ON-STATE CURSENT-(A//uSEC)

60

400

'

60
-

400

'

1000

400

>

10

10

100

RATE OF RISE OF ON-STATE CURRENT-(A/)iSEC>

RATE OF RISE OF ON-STATE CURRENT-(A//lSEC)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 90C)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 90C)

NOTES:
and Rectangular or Wave Current Ratings)
Switching voltage
800 volts.
Reverse voltage applied = Vr <800V.
Required gate drive:
20 volts, 65 ohms, 1 Msec risetime for less than 100

(Pertaining to Sine
1

2.
3.

<

4.
5.

5.

amps/jusec.

20 volts, 20 ohms,
100 amps/Msec.

RC

Snubber ckt. = .2 Mf, 512

Double-Side Cooled.
Max. energy dissipated during reverse recovery to be
15% of total W-S/P shown or 0.03 W-S/P whichever
is

.5 Msec risetime for greater

1000

100

than

932

least.

RECTANGULAR WAVE DATA

C387/C388

WATT-SECOND PER PULSE

--^"""-^

W41

10.

&>c
-'^0^
-

(di/dt

>.//>-

"

SN

^""v^/

= 100 A/jusec)

^--^

r^*

1^S

ENERGY PER PULSE VS. PEAK

CURRENT AND PULSE WIDTH

"\y

100

>

IOK

1000

PULSE BASE WIDTH ( M SEC)

*>,
L'

cn
^'

11.

W*

"s.

<*s
r

^/

10

(di/dt

= 25 A//usec)

tf

\,

>s

1000

100

ENERGY PER PULSE VS. PEAK

CURRENT AND PULSE WIDTH

IOK

PULSE BASE WIDTH ( M SEC)

rK*N^
*

**

S>f>^
"V x>.
"<\.

12.

\*^

*
,

<p

ENERGY PER PULSE VS. PEAK

CURRENT AND PULSE WIDTH
(di/dt

= 5 A/jusec)

^f
^v/
^S</

PULSE BASE WIDTH

\j

(^iSEC)

933

<n
UJ

C387/C388

4,000

<r

UJ
o.

2,000

i.ooo

200

Tj = 125 '01

(Tj

12

100

25C

INSTANTANEOUS ON-STATE VOLTAGE

*N4

Nk a
St

"frNKj.

*Sv>

+
NOTES:

^^

wx
W

1.

-^

2.

*-iX

>

100 amps/jis or anode

amps/us (Tp = 5 >is min.,
0.5 fis max. risetime) Maximum long term repetitive
anode di/dt - 500 amps/Ms with 20V - 20n gate
rate of current rise

/
-4 3

The locus of possible dc trigger points lie outside the

boundaries shown at various case temperatures.
20V 2012 is the minimum gate source load line when
rate of circuit current rise

4>Sv
-fS

3
o

VOLTS

MAXIMUM ON-STATE CHARACTERISTICS

13.

<

> 200

source.

THE LO :us o

25C

PC ss BL E

IT SI IF
TRIGGEF POIN TS
THE BO JNDAR IES SHC)W VT
VARIOUS CASE TE MPE:r* TlJR ES.
i

"20V, 20 Q LOA DLII\ E

I

INSTANTANEOUS GATE CURRENT- AMPERES

14.

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

200,000

UJ
<r
UJ

150,000

o
UJ

1 6,000

I 60,000

o
UJ
t-

100,000

~ | 80,000

55.0OO

4,000

40,000

f*
ifi

UJ

>i-

<z
*

S
UJ

3,000
UJ

zduj

INIT

15,000

ujq;o>

AL

Tj *

5500:

-4 0 C TO +I25C

LU

U.UJQ.

til

10,000

8,000

6,000

*<?

UjO
i.ooo

0.

10

20

40

4,000

60

NUMBER OF CYCLES AT 60Hz

15.

PULSE BASE WIDTH

SURGE (NON-REPETITIVE) ON-STATE CURRENT

16.

4
-

mSEC

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING
l

934

FC)R
di

3
o
o

III

SINE

C387/C388

WAVE

Itm
I600A

PULSE W DTH

eooA

100

17.

TYPICAL RECOVERED

CHARGE

400A

(Tj = 125C)

SINEWAVE CURRENT

WAVEFORM

200A

UJ
ID
or
<l

I00A
1

I
o
Q

50A

UJ
0C
UJ

>
O
o
UJ
a:

10

1000

100

10

REVERSE

di/dt - A//J.SEC

18.

<
Q

TRANSIENT THERMAL
IMPEDANCE -

01

JUNCTION-TO-CASE

UJ

<
S

DC)UB LE

SIDE:

COOL NG

.001

.0001
.0001

.001

.01

10

TIME- SECONDS

OUTLINE DRAWING
DEC

SYM
A
B

.240
.

10

MAX.
6.604

.130

2.794

3.302

.186

.191

.060

.075

MIN.

6.223

4.724

2.200

.011

.030

1.065

27051

2.500 55.88

63.50

.019

2.794

3.483

130

.762

3.302

.056

.060

1.000

1.065

.030

.096

.762

.130

150

3.302

1.345

1.422

2540

33.02

2 150
.140

12.200

.137

1.905

3632

4.851

1.524

1.430

1.300

935

6.096

.245

STRAIGHT LEAD

MET RIC
M M.

.260

T= LENGTH OF

MAL

INC IES
MIN.
MAX.

160

524

27.05

2.438
3.810

34

16

54.61

3.556

4.064

12360 309.9
313.9
.153
3.480 3.886

High Power

C390

Silicon

Controlled Rectifier
850A RMS

1300 VOLTS

AMPLIFYING GATE

^t"

The General

Electric C390 Silicon Controlled Rectifier is designed for phase

control applications. This is an all-diffused Press-Pak device employing the
field-proven amplifying gate.

FEATURES:

High di/dt Ratings

High dv/dt Capability with Selections Available
2
Excellent Surge and I t Ratings Providing Easy Fusing
Guaranteed Maximum Turn-Off Time with Selections Available
Rugged Hermetic Glazed Ceramic Package Having 1 " Creepage Path

IMPORTANT: Mounting

instructions

on the

last

page of this specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM 1

VOLTAGE, V RRM

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

500 Volts
600
700
800
900
1000
1100
1200
1300

500 Volts
600
700
800
900
1000
1100
1200
1300

600 Volts
700
800
900
1000
1150
1250
1400
1500

TYPE

C390E
C390M
C390S
C390N
C390T
C390P
C390PA
C390PB
C390PC
1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM !

Half sine wave waveform, 10 msec max. pulse width.

Average On-State Current, I T(AV )

Depends on Conduction .Angle (See Charts 1 and 2)
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
8000 Amperes
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
7600 Amperes
Critical Rate-of-Rise
Critical Rate-of-Rise
2

I
I

of On-State Current (Non-Repetitive)f

of On-State Current (Repetitive)f

>

(for fusing)

(for times

(for fusing)

(at 8.3 milliseconds) (See Figure

1.5 milliseconds)

See Figure 9

9)

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)
Storage Temperature,

800 A/jus
500 A/jus
2
100,000 (RMS Ampere) Seconds
2
265,000 (RMS Ampere) Seconds
200 Watts @ 40 /usee Pulse
5 Watts

Tstg

-40C to +150C

Operating Temperature, Tj

-40C to +125C

Mounting Force Required

2000 Lbs.

8.9

2500 Lbs.

Kn -11.1 Kn

NOTE:
fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
ohms gate trigger source with 0.5 ms short circuit trigger current rise time.

936

Vdrm <

1000V; 20

volts,

20

C390

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

TEST CONDITIONS

SYMBOL

MIN.

TYP.

MAX.

UNITS

Irrm

"

10

20

mA

Tj = +25C,

20

45

mA

Tj = +125C,

.06

C/Watt

.12

V DRM

V RRM

and

Idrm
Repetitive Peak Reverse
and Off-State Current

Irrm

V DRM

V RRM

and

Idrm
Thermal Resistance

Critical Rate-of-Rise of

R0jc

200

dv/dt

V//isec

Off-State Voltage (Higher

values may cause device
switching.)

Junction-to-Case

(Double-Side Cooling)

Junction-to-Case

(Single-Side Cooling)

Tj = +125C, V DRM = Rated, Using Linear

or Exponential Rising Waveform. Gate
Open.
v

DRM
T

Higher

Holding Current

minimum

Ih

dv/dt selections available

100

500

mAdc

consult factory.

T c = +25C, Anode Supply = 24 Vdc.

Initial

Latching Current

0.25

Adc

On-State Current = 2 Amps.

T c = +25C, Anode

Voltage = 24 Vdc.

Load Resistance 12 Ohms Max.

Turn-On Delay Time

DC

Gate Trigger Current

See Figure

1 1

0.7

td

150

15

0.25

2.4

!qt

for

Recommended Gate
Drive Conditions

DC

Gate Trigger Voltage

Peak On-State Voltage

jusec

VG t

V TM

T c = +25C, I T m = 50 Adc, V DRM Rated.

Gate Supply: 20 Volts, 20 Ohms, 0.1 Msec
Max. Rise Time
Tc =

+25C,

VD

= 6 Vdc,

RL

= 3

Ohms

300

Tc =

-40C,

VD

= 6 Vdc,

RL

Ohms

125

T c = +125C, V D = 6 Vdc, R L =

Ohms

mAdc

Vdc

T c = -40C to +125C, V D =
R L = 3 Ohms
Tc = +125C, V D =
Ohms

Volts

Commutated

125

/Usee

Turn-Off Time

RL

T c = +25C, I TM = 3000 Amps

Duty Cycle

Circuited

Rated,

6 Vdc.

(1)
(2)
(3)
(4)

<

= 1000

Peak.

0.01%

Tc = +125C
I
TM = 500 Amps

V R = 50 Volts Min.
V DRM (Reapplied)

(5) Rate-of-Rise of Reapplied Off-State

Voltage = 20V//xsec (hnear)

di/dt = 25 Amps/psec
(7) Repetition Rate = 1 pps
(8) Gate Bias During Turn-Off Interval =
(6)

Commutation

Volts, 100
*Contact factory for

maximum

Ohms

tq specification.

937

C390
140

SB

120
'^!(%)OUTV CYCLE

100

SINGLE-SIDE
COOLING
50 TO 40 HZ

80
8.3

% I0%\

16.7

25%
33%

50%
2 40
DC
200
300
400
500
AVERAGE ON- STATE CURRENT -AMPERES

20

600

100

200
300
400
500
AVERAGE ON- STATE CURRENT- AMPERES

100

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

(SINGLE-SIDE COOLING)

100

3.

200
300
400
500
600
700
AVERAGE FORWARD CURRENT (AMPERES)

(SINGLE-SIDE COOLING)

400
600
700
200
300
500
AVERAGE FORWARD CURRENT (AMPERES)

800

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

800

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

4.

(DOUBLE-SIDE COOLING)

(DOUBLE-SIDE COOLING)

1,400

600

1,200

i,4oo

1,200

1,000

9:

1,000

800

800

600

60O

in

400
200

200

<
e

LI

00

400

600

800

200
AVERAGE ON

AVERAGE ON- STATE CURRENT (AMPERES)

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

6.

938

400
600
STATE CURRENT (AMPERES)

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

800

S!

1.400

7.

100

900

500
700
300
400
600
200
AVERAGE ON STATE CURRENT (AMPERES)

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

8.

(EXTENDED RANGE)
g 800
S 600

8400
8
400

900

800

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM
(EXTENDED RANGE)

a.

200
400
500
600
700
300
AVERAGE ON - STATE CURRENT (AMPERES)

^3

9
-I
BLOCKING VOLT AGE=0
>1

z
u

8
-

i5

04
UJ

I
Z

3
2

^%

0)
_1

<
4
3
ON-STATE VOLTAGE

>

10

rt RATING FOLLOWING RATED

10

40

20

60

CYCLES AT 60 HZ.

VOLTS

10.

LOAD CONDITIONS

SURGE (NON-REPETITIVE) ON-STATE

CURRENT

NOTES:
1. Maximum

allowable gate power dissipation = 5 watts.

DC

trigger points

outside the

2.

The

3.

boundaries shown at various case temperatures.

Tp = Rectangular Gate Current Pulse Width.

locus of possible

lie

I
40 60 80
6. 8. 10
20
4.
2.
4 6 .8 10
INSTANTANEOUS GATE CURRENT- AMPERES
11.

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS
939

=
=

y'

=1

f
*f

"TT

-4
--It

'

r~

>~

"H

"5

4}

"IT
4}
TX
FOR 5* THERMAL RESISTANCE ADO 005 C/W ALONG ENTIRE CURVE LENGTK
FOR 6^ THERMAL RESISTANCE A0D.0I7C/VK ALONG ENTIRE CURVE LENGTH
FOR D.C. THERMAL RESISTANCE SUB. .007 C/W ALONG ENTIRE CURVE LENGTI-

"NO" ES:

ZD

10

3.0

4.0

SX>

SO-

II

12.

0.

0.01

TIME (SECONDS!

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

MAXIMUM ON-STATE CHARACTERISTICS

TRANSIENT THERMAL IMPEDANCE -

13.

JUNCTION-TO-CASE (DOUBLE-SIDE COOLING)

OUTLINE DRAWING
DEC

sw

.260

6.096

MAX.
6.604

.no

.130

2.794

3.302

.245

.186

.191

.060

.075

940

4.724
1.524

2.200

.Oil

.030

4.851
1.905

36.32

1.430

MIN.

6.223

E
F

LENGTH OF
STRAIGHT LEAD

MET RIC
M M.

.240

MAL

INC HES
MIN.
MAX.

1.065

27.051

2.500 55.88

63.50

.019

2.794

130

.762

.056

.060

1.000

1.065

1.422

25.40

.030

.096

.762

.130

.150

3.302

Q
R

1.300

1.345

S
T

.067

12.200

.137

3302

2.150

.803

1.524

2705
2.438
3.810

34.16
54.61

1.702

12.360 309.9
.153

3.483

3.302

3.480

2.110
313.9

3.886

High Power
ELECTRONIC

170.64 8/76

Silicon
MNAcram

Controlled Rectifier
SEMICONDUCTORS

C391

~l

850A RMS

1800 VOLTS

TE^T

AMPLIFYING GATE

Electric C391 Silicon Controlled Rectifier is designed for phase

control applications. This is an all-diffused Press-Pak device employing the
field-proven amplifying gate.

The General

FEATURES:
High di/dt Ratings
High dv/dt Capability with Selections Available
2
Excellent Surge and I t Ratings Providing Easy Fusing
Guaranteed Maximum Turn-Off Time with Selections Available
Rugged Hermetic Glazed Ceramic Package Having 1 " Creepage Path

IMPORTANT: Mounting

instructions

on the

last

page of this specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE. V DRM l

VOLTAGE. Vrrm 1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM >

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

1300 Volts
1400

1300 Volts
1400
1500
1600
1700
1800

1470 Volts
1580
1700
1790
1920
2040

TYPE

C391PC
C391PD
C391PE

1500
1600
1700
1800

C391PM
C391PS

C391PN

Half sine wave waveform, 10 msec max. pulse width.

Average On-State Current, It(av)

Peak One-Cycle Surge (Non-Repetitive) On-State Current,

TSM (60 Hz)

Current,
I
(Non-Repetitive)
On-State
Peak One-Cycle Surge
TSM (50 Hz)
On-State
Current
(NonRepetitive)!
Rate-of-Rise
of
Critical
Critical Rate-of-Rise
2
I t
I

Depends on Conduction Angle (See Charts 1 and 3)

8000 Amperes
7000 Amperes
15

>

1.5 milliseconds)

(for fusing)

(for times

(for fusing)

(at 8.3 milliseconds)

See Figure 11

A/^ s

75 A /^ s
Seconds

of On-State Current (Repetitive)f

(RMS Ampere)2
2
265,000 (RMS Ampere) Seconds
100,000

200 Watts

Peak Gate Power Dissipation, P GM

@ 40 ^sec Pulse
^ Watts

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T STG

A0 C t0

Operating Temperature, Tj

-40C to +125C

+150

- 2500 Lbs.
Kn-ll.lKn

2000 Lbs.

Mounting Force Required

8.9

NOTE:
t

for conditions of
di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6
gate trigger source with 0.5 fjs short circuit trigger current rise time.

ohms

941

Vdrm < 1300V;

20

volts,

20

C391

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Current

MAX.

UNITS

10

20

mA

Tj = +25C,

20

45

mA

Tj = +125C,

.06

C/Watt

.12

MIN.

Irrm

TYP.

TEST CONDITIONS

V DRM

V RRM

and

Idrm
Repetitive Peak Reverse
and Off-State Current

Irrm

V DRM =V RRM

and

Idrm
Thermal Resistance

Critical Rate-of-Rise of
Off-State Voltage (Higher
values may cause device
switching.)

R0jc

200

dv/dt

V//isec

Junction-to-Case

(Double-Side Cooling)

Junction-to-Case

(Single-Side Cooling)

Tj = +125C, V DRM 0.8 x Rated, Using

Linear or Exponential Rising Waveform.

Gate Open.
v DRM
Exponential dv/dt = 0.8

(.632)

T
Higher

DC

Gate Trigger Current

See Figure 10 For
Recommended Gate
Drive Conditions

DC

Gate Trigger Voltage

Peak On-State Voltage

minimum

Igt

V GT

V TM

dv/dt selections available

150

consult factory.

Tc =

+25C,

VD

= 6 Vdc,

RL

= 3 Ohms

300

Tc =

-40C,

VD

= 6 Vdc,

RL

125

T c = +125C, V D =

RL

= 3 Ohms

.15

2.65

mAdc

Vdc

T c = -40C to +125C, V D =
R L = 3 Ohms
T c = +125C, V DRM =
Ohms

Volts

Circuited

Commutated

t
l

200

/Usee

(1)
(2)

<

Ohms

6 Vdc,

Rated, R L = 1000

T c = +25C, ITM = 3000 Amps

Duty Cycle

Turn-Off Time

6 Vdc,

Peak.

0.01%

T c = +125C
I TM = 500 Amps

(3)

VR

(4)

.8

= 50 Volts Min

V DRM

(Reapplied)

(5) Rate-of-Rise of Reapplied Off-State

Voltage = 20V//usec (linear)

di/dt = 25 Amps//usec
Repetition Rate = 1 pps
(8) Gate Bias During Turn-Off Interval =
(6)

Commutation

(7)

Volts, 100

*Contact factory for

maximum

tq specification.

942

Ohms

C391

v^

SINGLE SIDE COOLED

50-60 Hz.

SINGLE SIDE COO -ED

50 -80 Hi

m m

CONDUCTION

ANGLE

3't-L

LS.

ioo

t-

% DUTY

CYCLE =

^^

UJ

S90
CJ
UJ

a
<
I
J
cc NDUCTION ANGL ;:90

120

eo

70

OC^N.

180

DUTY CYCLE: 33%

400
200
300
AVERAGE ON-STATE CURRENT - AMPERES

100

100

50%

DC

400

200
300
AVERAGE ON-STATE CURRENT - AMPERES

5C

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM -

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM SINGLE-SIDE COOLED

SINGLE-SIDE

COOLED

doub LESIDEC OOLEO

50-6OHI

^v

CONOUC

riON

ANGL ::90

120

SO"

H
ONDUCTIC N
ANGLE

18

600
300
400
500
200
AVERAGE ON-STATE CURRENT - AMPERES

100

DC

700

400
500
600
300
AVERAGE ON-STATE CURRENT

8(

700

800

AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM
DOUBLE-SIDE COOLED

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM DOUBLE-SIDE COOLED

PERCENT

DL

TY CYCLE:

oc/^

yVo^V,

50-60h

Ml-

-UJrT _**>oot
T

IOO

5.

400
200
3O0
AVERAGE ON-STATE CURRENT-AMPERES

SCO

400
200
300
AVERAGE ON-STATE CURRENT - AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

6.

943

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

C391
2800

2800

2600

2400

CONDUCTION ANGLE: 90

I20

bC/

/I80

/5Q

OC,

6 2400
S

2200

2200

2000

2 2000

800

PERCENT OUTY CYCLE: 33

2600

i/>

i 1800
in

I600

400

200

000
800

/f77f\

(Wfa

_J
L_
p^
CONDUCTION

600

1600

1200

1400

1000

180*

w
5

ANGLE

800

600

uj

400

3 400
200

S^>-'

200

<
400

600

800
AVERAGE ON-STATE CURRENT

7.

1000

1200

AMPERES

MAXIMUM AVERAGE ON-STATE POWER

DISSIPATION FOR SINUSOIDAL CURRENT
WAVEFORM (EXTENDED RANGE)

50-60 Hz

//-

^
s*

m
lit
H

i^^

^
J
J
T

400
600
800
AVERAGE ON -STATE CURRENT

1000
-

AMPERES

MAXIMUM AVERAGE ON-STATE POWER

DISSIPATION FOR RECTANGULAR CURRENT
WAVEFORM (EXTENDED RANGE)

8.

600
bid

z A

COOLING

RESISTANCE

Sulu
K<
u
5

xJP
3 u
lit

^-

uj

500

AMBIENT)

EXCHANGER

UJ

SIDE

0.

TO

5Ei

THERMAL

(CASE

g-HEAT

Z
*

0.03

UJ
t

a
S

? 300

0.05

0.075
0.10
0.125
0.15

DUTY CYCLE = 33 ''3 %

USE 'scs*- 005 C/W

0.30

I
\ 200

~"
w

UJ

>

"

?gg

25

ioo

CONDUCTION ANGLE = 180 DEGREES

USE R 9cs i.005 C/W
1

_,.

30

40
50
60
AMBIENT TEMPERATURE - - C

70

80

30

20

AVERAGE RECTANGULAR ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

10.

40
50
60
AMBIENT TEMPERATURE -'C

80

70

AVERAGE HALF SINEWAVE ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

[300

o:

^
M

8,000

T.

1|

^^^

=25*C

6,000

ij! ioo

80

Tj=l25'C

jS*^^*

4,000

8 so

1 8!
.

JUNCTION TEMPERATURE- I25-C

BLOCKING VOLTAGE -0

1000

IB

8
O
x

800

IO

600

5i^

n
Si

2,000

400

z
200

IOO

4
5
6
PULSE WIDTH -MILLISECONDS

11.

2
I

RATING FOLLOWING RATED

LOAD CONDITIONS

1.0

2.0

3.0

4.0

5.0

INSTANTANEOUS ON - STATE VOLTAGE - VOLTS

12.

944

MAXIMUM ON-STATE CHARACTERISTICS

DOUBLE

C391

0.0001

TIME-SECONDS

TRANSIENT THERMAL IMPEDANCE -

13.

JUNCTION-TO-CASE (DOUBLE-SIDE COOLING)

IE

50

-J&&&.

iO

4>

<*
>

POSSIBLE"
DC
TRIC at 1
NTS

<>

i1

>5>>

I25C

17

'

-J-20V,20fl IS MINIMUM GATE SOURCE

LOAD LINE FOR di/dt>75AMP/^SECTp=5^SEC MIN., 0.5/1 SEC MAX RISE

25C
"'
>

I
1

TIME. MAXIMUM LONG TERM REPETATIVE ANODE di/dt'75 AMP/fiSEC

.1

.2

.3

.4

.5

.6.7.8.91.0

INSTANTANEOUS GATE CURRENT

14.

^L"^

-4C)C

*-

\N&,

--

3.0 4.0 5.0G.0 8.0 10.0

2.0
- AMPE RES

GATE TRIGGERING CHARACTERISTICS

DEC

MAL

METFilC

INC HES

SYM

M1N.

.240

.260

.110

130

2.794

.245

.186

.191

.060

.075

2.200

Oil

.030

945

2.794

3.483

.762

3.302

.060

.030

.096

.762

.130

.150

3.302

1.422

25.40

345 33.02

083

.067

1702

12.360 309.9
.

153

1.524

27.05
2

438

3.810

34.16
54.61

2.150

.137

63.50

130

1.065

1.905

.019
.

.056

12.200

4.851

27.051

500 55.88

1.000

S
T

3.302

3632

1.300

OUTLINE DRAWING

1.524

15.

4.724

1.065

MAX.
6.604

6.223

1.430

STRAIGHT LEAD

MIN.

6.096

T= LENGTH OF

M. M.

MAX

3.480

2.110

313.9

3.886

C391

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When

the Press-Pak

instructions, a reliable

2.

3.

assembled to a heat sink in accordance with the following general

and low thermal resistance interface will result.
is

Check each mating surface for nicks, scratches, flatness and surface finish. The heat dissipator
mating surface should be flat within .0005 inches and have a surface finish of 63 micro-inches.
is recommended that the heat dissipator be plated with nickel, tin, or gold iridite. Bare
aluminum or copper surfaces will oxidize in time resulting in excessively high thermal resistance.

It

Sand each surface lightly with 600 grit paper just prior to assembly. Clean off and apply
(GE SF1 154,200 centistoke viscosity) or silicone grease (GE G322L or Dow Corning
DC 3, 4, 340 or 640). Clean off and apply again as a thin film. (A thick film will adversely
affect the electrical and thermal resistances.)
silicone oil

4.

Assemble with the specified mounting force applied through a self-leveling, swivel connection.
The force has to be evenly distributed over the full area. Center holes on both top and bottom
of the Press-Pak are for locating purposes only.

HEAT SINK SELECTION MADE EASY

The C391

marks the introduction of two new characteristic curves which

heat sink selection. Figures 9 and 1 plot allowable average current versus
ambient temperature and case-to-ambient thermal resistance for the two most frequently encountered waveforms, 1/3 duty cycle rectangular current and 180 sinusoidal current waveforms.
As soon as the average forward current and maximum ambient temperature are known, the designer
can specify a heat sink thermal resistance. Note that the graphs span the range of heat sinks from
should greatly

specification sheet
facilitate

water-cooled (RecA = .03C/W) to free-air convection (R eCA = 0.3C/W).

interpolate between the curves for Rg
cs

It is

possible to linearly

These curves have been derived from the following basic equation:

TJ = TA + P AVG
where:

R0JA

Tj = 125C

For increased reliability, the usual practice is to derate Tj 15-30 degrees. Figure 9 and 10 can
perform this function by the simple expedient of raising T by a like amount.
A

946

HIGH SPEED
C392/C393
C394/C395

Silicon Controlled Rectifier

600

Amps RMS

Volts (500-700)

AMPLIFYING GATE

C392, C393, C394 ami C395 Silicon Controlled Rectifiers are designed for power switching at high frequencies. These are alldiffused Press-Pak devices employing the field-proven amplifying gate.

The General

Electric

FEATURES:

Fully characterized for operation in inverter and chopper applications.

High di/dt

High dv/dt capability with selections available.

Rugged hermetic glazed ceramic package having l" creepage path.

IMPORTANT:

ratings.

Mounting instructions on the

page of specification must be followed.

last

HIGH FREQUENCY CURRENT RATINGS

1

C394
C395

C392.

g 900

C393

Q.

V
'

IOOO
1

f\Tv

"*
cc

*"

70

/\f\.
SINUSOOOL W(WEFOflM

MU

50% DUTY CYCL E

180 CONDUCTION
65C CASE TEMPERATUR
600 VOLT SWITCHING

50%

K
JUO
aju

DUTY CYl/Lt
180 CONDUCTION

a.

3 i

65C CASE TEMPERATURE

600 VOLT SWITCHING
5J1 > 2ju

SI\IUBBE
1

SINUSOIDAL WAVEFORM

=i

<

'

IOOO

IOOO

FREQUENCY

FREQUENCY
IN

Equipment designers can use the C392, C393, C394, C3

Choppers

SCR's

in

demanding applications, such

Regulated Power Supplies

like the Type C140/141, C158/159 and

GE now
the

for:

DC

Converters

introduces a new, high-frequency rating for

C392,

C393,

Peak Current

C394,

C395

SCR's,

Edge

Pulse Width

di/dt of Leading

Frequency
Case Temperature

Frequency

Duty Cycle

Case Temperature

947

which

are:

Peak Current
vs.

vs.

to

FOR RECTANGULAR WAVE OPERATION

C358 SCR's,

C392, C393, C394, C395 SCR's are rated

DC

as:

High Frequency lighting

Cycloconverters

Inverters

FOR SINEWAVE OPERATION

the

Hi

IN

Hi

C392/C393/C394/C395

MAXIMUM ALLOWABLE RATINGS

TYPES

Repetitive Peak

Repetitive Peak

Non-repetitive Peak

Off-State Voltage,

Reverse Voltage,

Reverse Voltage,

V RRM

V DRM
Tj = -40C to +125C

C392, C393, C394, C395A

C392,C393,C394,C395B
C392, C393, C394, C395C
C392, C393, C394, C395D
C392, C393, C394, C395E

C392, C393, C394,

100 Volts

150 Volts

300
400
500
600
720

Half sinewave waveform, 10 ms max. pulse width

Peak One Cycle Surge (Non-Repetitive) On-State Current, I

TSM (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
TSM (60 Hz)
2
I t (for fusing) for times > 1.5 milliseconds C392, C393
It (for fusing) for times > 1.5 milliseconds - C394, C395

It

(for fusing) for times

(for fusing) for times

Tj = 125C

100 Volts
200
300
400
500
600

200
300
400
500
600

C395M

V RSM

Tj = -40C to +125C

>
>

8.3 milliseconds
8.3 milliseconds

C392, C393
C394, C395

(RMS
(RMS
(RMS
250,000 (RMS
50,000

100,000
120,000

C392, C393
C394, C395

Non -Repetitive

Critical Rate-of-Rise

of On-State Current,

Critical Rate-of-Rise

of On-State Current, Repetitive

Average Gate Oower Dissipation, Pg(av)

Storage Temperature, T stg
Operating Temperature, Tj

5500 Amperes
8000 Amperes
Ampere) 2 Seconds
Ampere) 2 Seconds
Ampere) 2 Seconds
Ampere) 2 Seconds
800 A///s f
500 A//*s t
2 Watts
!-40C to +150C

-40C to +125C
2000 Lb. 10%

Mounting Force Required

8.9
fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for
conditions of max. rated
20 ohms gate trigger source with 0.5 fis short trigger current rise time.

KN

V D rm;

+ 10%

20

volts,

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

UNITS

15

mA

Irrm

TEST CONDITION
Tj = +25C

and

Idrm
Repetitive Peak Reverse
and Off-State Current

Irrm

20

45

mA

VDRM

V RRM

V RRM

Tj = 125C

and

Idrm
Thermal Resistance

RflJC

Critical Rate-of-Rise of

dv/dt

.05

200

500

.06

C/Watt
V/Msec

Forward Blocking Voltage

(Higher values may cause
device switching)

v DRM

Junction-to-Case (Double-Side Cooled

Tj = +125C, Gate Open. VDRM = Rated

Linear or Exponential Rising Waveform.

Exponential dv/dt Higher

minimum

dv/dt selections available

V RM

(.632)

consult factory.

Holding Current

Ih

40

1000

mAdc

T c = +25C, Anode Supply = 24Vdc,

DC

!gt

70

200

mAdc

Tc =

+25C,

100

400

Tc =

-40C,

25

150

T c = +125C,

Initial

Gate Trigger Current

948

On-State Current = 10 Amps.

VD
VD
VD

= 10 Vdc,

= 10 Vdc,
= 10 Vdc,

RL =
RL =
RL =

Ohm
Ohm
Ohm

CHARACTERISTICS
TEST

DC

SYMBOL

MIN.

TYP.

MAX.

UNITS

VGT

Vdc

Gate Trigger Voltage

C392/C393/C394/C395
TEST CONDITION

Tc =

RL

1.50

RL

VTM

Peak On-State Voltage

C392, C393
C394, C395

3.3

4.2
2.5

Turn-On Delay Time

td

Ohm

Duty Cycle < .01%.

Width = 3.0 ms

Pulse

Msec

0.5

/xsec

(1)
(3)

C393, C395

12

50 Adc,

Open

rise

Circuit,

T c =+125C
Itm = 500 Amps.

V R = 50 Volts Min.
V DRM (Reapplied)

(4)
(5) Rate-of-rise of reapplied off-state
voltage = 20 V/jusec (hnear).

Voltage)

max.

VDRM

Gate
20 Ohms,
time, tt.ttt

T c = +25C, I TM =

(2)

C392, C394

10 Vdc,

T c = +125C, VDRM R L = 500 Ohms

T c = +25C, I T m = 3000 Amps Peak

0.1 jtisec

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

VD =

to +125C,

Ohm

Supply: 20 Volt

= 10 Vdc,

Volts
2.3

VD

-40C to 25C,

T c = 25C

3.0

0.15

(6)

Commutation

di/dt

= 25

Amps/jttsec

(7) Repetition rate = 1 pps.

(8) Gate bias during turn-off interval

C392, C394

12

C393, C395

(1)

14
20

17

(2)
(3)
(4)

100 ohms

volts,

T c = +125C
Itm = 500 Amps
y R = 50 Volts Min.

VDRM

(Reapplied)

(5) Rate-of-rise of reapplied off-state

voltage = 200 V//zsec (linear).

(6)

Commutation

di/dt

= 25 Amps/^isec

Repetition rate = 1 pps.

=
(8) Gate bias during turn-off interval
(7)

volts,

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

jusec

tq(diode)

(1)
(2)
(3)

(4)

C392, C394
C393, C395

V R = 1 Volt
V DRM (Reapplied)

(5) Rate-of-rise of reapplied off-state

18

25

voltage

maximum

= 200 V/usec

(linear).

(6) Commutation di/dt = 25 Amps/^sec

(7) Repetition rate = 1 pps.
=
(8) Gate bias during turn-off interval
volts,

(Consult factory for specified

100 ohms

T c = +125C
Itm =500 Amps

100 ohms

turn-off time.

Delay time may increase significantly as the gate drive approaches the Igt of tne Device Under Test.
a non-inductive resistor.
ft fCurrent risetime as measured with a current probe, or voltage risetime across
ft

C394,C395

SINE

WAVE CURRENT RATING DATA

--|-|
_

*,
s2fl
-"-<^A>

-,

v>

S>

^? %.-c

1
000

-i

>

N4001.

id
60

3.
2500

sum

S
S
5

-a

O.OOC HI

B ,oc

PULSE BASE WIDTH-f^-SEC)

949

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65 C)

C392/C393/C394/C395

C394X395
10000

rm

"^

*>s

>. &,.

\A*e.
^^nL^/T1
1

^~

r$?

^$t

N
1000

-^1000

^400

4.
1

:^=^ ?500

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)

~ - 5000

"~l5,0O
100

IC

100

1000

PULSE BASE WIDTH-tjU. SEC)

5.

ENERGY PER PULSE FOR

SINUSOIDAL PULSES

100

PULSE BASE WIDTH-tyli

1000

SEC).

950

C392/C393/C394/C395

C394,C395
RECTANGULAR WAVE CURRENT RATING DATA

DUTY CYCLE - 25%

DUTY CYCLE - 50%

60,400

1000

1000

60.400

900
800

900
800

IO0O

700

700

600

600

"^ e

500

500

400

2500

s ,

400

PO .SfS

300

'e

5000
0/v

hdii

10,000
10,000

10

100

100

10

RATE OF RISE OF ON-STATE CURRENT (A/^iSEC)

RATE OF RISE OF ON-STATE CURRENT (A/^iSEC)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 65C)

8.

1000

1000

900
800
700
600

900
800

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65 C)

60.400

700

"**>^

600

500

500
1000

2500

2500

r>

"^ rfS

-s ?S

=l*/fe

"^^i\

5000

P
_ 5f :c

"5000

/V

10,000
- 10,000

10

100

10

7.

100

RATE OF RISE OF ON-STATE CURRENT (A//J.SEC)

RATE OF RISE OF ON-STATE CURRENT (A/jSEC)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 90C)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

951

C392/C393/C394/C395

C394X395
WATT-SECOND PER PULSE
..

IOO0

Hv
%

~v-

s\
^ gw

lbs X-

\J

fri

Ns
N

\c

>

X* E

sk

ENERGY PER PULSE

AND PULSE WIDTH

VS.

PEAK CURRENT

(di/dt =

100 A/^sec)

V
^

^ $\,
Psft

ion

10.

_s*,---

PULSE BASE WIDTH-tyU. SEC)

10000

55

">

v-

O
<

4^-

w"

11.

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 25 A/jusec)

12.

ENERGY PER PULSE

<';

KA

K^

**==

%u
/

ftV \f

it

^s*

k_

PULSE BASE WIDTH-(ai SEC)

*m

n=^==

*.!

x*

X
^

X^

v
N

rt^

\^

NJ

VS.

AND PULSE WIDTH

'

PULSE BASE WIDTH-(^(. SEC)

952

PEAK CURRENT

(di/dt

= 5 A/;usec)

C394,C395

sine

wave current rating data

C392/C393/C394/C395

^4O0
'

60

^^

13.
1000

PUL se

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

SECOND
2SQQ.

100

f>

oor

IOK

1000

100

PULSE BASE WIDTH (^SEC)

1000

-^r*^

60

_^

*,'400

14.

PULSES PER SECC)ND

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)

10 DO

2500
100

IOK

I000

PULSE BASE WIDTH

(,iSEC)

I000

ENERGY PER PULSE FOR

SINUSOIDAL PULSES

I000

I00

'"I0

PULSE BASE WIDTH

NOTES:

M SEC)
4.

1.
2.
3.

<

volts,

65 ohms,

Msec risetime for

less

than 100

amps/jjsec.

<

400 volts.
Reverse voltage applied = Vr
Max. energy dissipated during reverse recovery to be
15% of total W-S/P shown or 0.03 W-S/P whichever
is least. You can subtract this energy per pulse when
operating with an inverse diode.

Required gate drive:

20

and Rectangular Wave Current Ratings)

400 volts.
Switching voltage

(Pertaining to Sine

5.

6.

20 volts, 20 ohms, .5 Msec risetime for greater than 100

amps/Msec
RC Snubber ckt. = .2 Mf, 512.
Double-Side Cooled
o
Values of W-S/P are for Tj = 125 c
'

7.

using the components specified are employed, then the

If the circuit di/dt remains below 100 amps/Ms, and normally constructed snubbers
"soft" gate drive shown under "conditions" for each current rating curve is sufficient.

(20V - 20ft), t r = .5ms, specified in Chart 27 must be used. In addition

If the circuit di/dt exceeds 100 amps/MS then the stiff gate source
the total device di/dt must be checked to insure that it is not above the 500 amps/MS which is the long term repetitive limit noted in Chart 27
for stiff gate source.
gco

C392/C393/C394/C395
|

C392,C393
RECTANGULAR WAVE CURRENT RATING DATA
DUTY CYCLE - 50%

DUTY CYCLE - 25%

1000

1000

900
800
700
600

900
800
700
600

500

m *
,

60

500

400

400

400

300

300

->

"L

200

.ii!^sj"* se

1000

fit

200
(;

OA/o

"

^^

fe

1000

2500
2500
100

100

10

16.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS di/dt (Tc = 65 C)

1000

900
800

18.

900
800
700
600

600
^>u

-6

^^co ND

500

-se

i^l^co NO

400

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65 C)

I000
1

700
500

100

RATE OF RISE OF ON-STATE CURRENT-IA/fiSEC)

RATE OF RISE OF ON-STATE CURBENT-(A//iiSEC)

-60

400

- 400

400

* 1000

" 1000

I00
10

100

10

RATE OF RISE OF ON-STATE CURRENT -(A^SEO

17.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

19.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90 C)

NOTES:
(Pertaining to Sine

and Rectangular Wave Current Ratings)

1.

RCSnubber

2.

Off-State Voltage = 400 volts.

Reverse voltage = 50V
Vr <400 V.
Maximum Tj = +1 25C.

3.
4.
5.

ckt.

.25juf, 5J2-

<

Max. energy dissipated during reverse recovery to be

of total W-SYP shown or 0.03 W-S/P whichever
is least. You can subtract this energy per pulse when
operating with an inverse diode.

15%

100

RATE OF RISE OF ON-STATE CURRENT-(A//xSEC)

(maximum) = 200 volts/Msec.

Required gate drive:
20 volts, 65 ohms, 1 Msec risetime. See chart 27.
8. Double-Side Cooled.
9. Values of W-S/P are for Tj = 125C.
6.

7.

954

dv/dt

C392/C393/C394/C395

C392,C393
WATT-SECOND PER PULSE

watt

-^

20.

*"-**^

j_k corYD

^_

p'

m^" Sfr

Iv

Xy

ENERGY PER PULSE

VS.

AND PULSE WIDTH

PEAK CURRENT

(di/dt

= 100 A//xsec)

<fe

"^"'^sV

1000

100

PULSE BASE WIDTH USEC)

&^

21.

--*^.s?

V '=. ^S?0o.
^W
*\^/

A
<*s

J
<,

VS.

PEAK CURRENT

(di/dt

= 25

A/jusec)

N^

-H?

X/

ENERGY PER PULSE

AND PULSE WIDTH

PULSE BASE WIDTH ( M SEC)

<s

'>>

"*
c

s
.

>
<

o,

\>

ENERGY PER PULSE

AND PULSE WIDTH

VS.

PEAK CURRENT

(di/dt

= 5 A/)usec)

\tf

^*S
S^

PULSE BASE

22.

MOTH

(/4.SEC)

I
955

C392/C393/C394/C395

C392,C393

C394,C395

4000
<3

3flOO

UJ

2000

5 2,000
C394, C395

1000

A) 25"C

I25C>

Tl

1000

800

500

600
500

400
300

200

100
2
3
4
INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

MAXIMUM ON-STATE CHARACTERISTICS

23.

2.0

1.5

3.0

2.5

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

24.

10,000

MAXIMUM ON-STATE CHARACTERISTICS

300,000

200,000

"i.

^9^,

-qA

150,000

Ks$s,

80,000

C-5^>

60,000
50,000
15,000
|

_jUj|ui_(n

2|S5S

'0.000

*y?(r

8,000

3,000

SURGE (NON-REPETITIVE) ON-STATE CURRENT

C39J'.393

5,000

10

4
6
PULSE BASE WIDTH (mSEC)

1.5

CYCLES AT 60 Hz
25.

C3s * 395

6,000

'

26.

SUB-CYCLE (NON-REPETITIVE) ON-STATE

CURRENT AND 2 t RATING
l

40

O 20

fej

o
>
i-

<

o
o

>Vfe.
ins?}.

SSIBLE

DC TR G6ER
PO NT!

UJ

2.
*

<s^

source.

tS

25C

U-20V, 20 n lo kDLI NE

.2

-3

.4

.6

.8

1.0

2X5

3.0 4.0

6.0 8X5IO.O

INSTANTANEOUS GATE CURRENT - AMPERES

27.

>

100 amps/jxs or anode

amps/MS (Tp = 5 v-% min.,
Maximum long term repetitive

0.5 ms max. risetime)

anode di/dt = 500 amps/jus with 20V

-40C

locus of possible dc trigger points lie outside the

boundaries shown at various case temperatures.
20V 20f2 is the minimum gate source load line when

>

25C

The

rate of circuit current rise

rate of current rise
200

VS^^
v+v

sk*
-

lH.

i**

i
10

NOTES:
1.

'a.

-i

UN

&

30
<n

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS
956

- 20

gate

C392/C393/C394/C395

DOUBLESIDED COOLING
T

o.oa

o.a

O.I

TIME-SECONOS

28.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

METP IC

DECIfi/IAL

INO
SYM
A

MIN.

M.IV

MAX.

.240

.260

.110

.130

C
D

.245

.186

.191

.060

.075

G
2.200

2.500

.011

.019

.030

.130

.056

.060

1.000

1.065

.030

.096

.130

.150

1.300

1.345
2.150

.067

.083

R
s
STRAIGHT LEAD

4.851

1.905

36.32
27.051

1.065

T
U

6.604
3.302

6.096
2.794
6.223
4.724
1.524

1.430

T= LENGTH OF

MAX.

MIN.

2.200
.137

2.360
.153

63.50
3.483
3.302
1.524
27.05

55.88
2.794
.762
1.422

25.40
.762
3.302
33.02

2.438
3.810
34.16
54.61

1.70

2.11

309.9
3.480

313.9

3.886

OUTLINE DRAWING

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When

the Press-Pak

is

assembled to a heat sink in

3.

Sand each surface

lightly

with 600

prior to assembly. Clean off

accordance with the following general instructions,

a reliable and low thermal resistance interface with

grit

and apply

paper just
silicone oil

1.

(GE SF1154 200. centistake viscosity) or silicone

grease (GE G623 or Dow Corning DC 3, 4, 340 or
640). Clean off and apply again as a thin film. (A

flatness

thick film will adversely affect the

result.

Check each mating surface for nicks, scratches,

and surface finish. The heat dissipator mating surfaces should be flat within .0005 inches and
have a surface finish of 63 micro-inches.
2. It

is

recommended

that the

plated with nickel, tin or gold

and

Assemble with the specified mounting force applied

through a self beveling, swivel connection. The force
has to be evenly distributed over the full area. Center
4.

heat dissipator be

iridite.

electrical

thermal resistances.)

Bare aluminum

on both top and bottom of the Press-Pak

or copper surfaces will oxidize in time resulting in

holes

excessively high thermal resistance.

for locating purposes only.

957

are

HIGH SPEED

C397/C398

Silicon

Controlled Rectifier
1200

650 A RMS

Volts,

AMPLIFYING GATE

^T-

The General Electric C397 and C398 Silicon Controlled Rectifiers are
designed for power switching at high frequencies. These are all-diffused
Press-Pak devices employing the field-proven amplifying gate.
FEATURES:

Fully characterized for operation in inverter and chopper applications.

High di/dt ratings.

High dv/dt capability with selections available.
Rugged hermetic glazed ceramic package having

IMPORTANT:

"

creepage path.

Mounting instructions on the mounting clamp specifications

at

back of

must be followed

this sheet

HIGH FREQUENCY CURRENT RATINGS

[400
1300

1200

1000

1000

IIOO

900
\

900

800

BOO

700

TOO

600

600

\o

500

SINUSOIDAL

40O

180*

WAVEFORM

di/dt.

\\

CONDUCTION

65C CASE TEMPERATURE

v
RECTANGULAR WAVEFORM
50% DUTY CYCLE

800 VOLT SWITCHWG

30O

50% DUTY CYCL E

200
1

100

di/dl
i

5A,

5AMPS/^SEC

65C CASE TEMPERATURE

SNU BBE R
"20IL,.20ju f SN UBB ER

.20;uf

,2/jf

SNUBBE:r

1000

FREQUENCY

IN

1000

t-

FREQUENCY

Equipment designers can use the C397/C398 SCR's

Choppers

in

Sonar Transmitters
Induction Heaters

Regulated Power Supplies

Radio Transmitters

FOR SINEWAVE OPERATION

like the Type C140/141, C158/159 and
the

demanding applications, such

Inverters

C397/C398 SCR

is

C358 SCR's,

the

Peak Current

Case Temperature

as:

Cycloconverters
to

DC

Converters

High Frequency Lighting

FOR RECTANGULAR WAVE OPERATION

GE now introduces a new, high-frequency rating

rated for:

Width
Frequency

Hi

DC

C397/398 SCR, which

is:

Peak Current

di/dt of Leading

Frequency

Duty Cycle

Case Temperature

vs.

IN

vs.

Pulse

958

Edge

for

C397/C398

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE. V DRM 1

VOLTAGE, V RRM l

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V BSM 1

Tj = -40C to +125C

Tj = -40C to +125C

Tj = 125C

TYPES

C397/C398E
C397/C398M
C397/C398S
C397/C398N
C397/C398T
C397/C398P
C397/C398PA
C397/C398PB
1

700
800
900
1000
1100
1200

Half sinewave waveform, 10

ms max.

600 Volts
720
840
960
1080
1200
1300
1400

500 Volts
600
700

500 Volts
600

800
900
1000
1100
1200

pulse width.

7500 Amperes

Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM

2
I

(for fusing) for times

(for fusing) for times

2
I

Critical

>
>

95,000
230,000

1.5 milliseconds

8.3 milliseconds

(RMS Ampere) 2 Seconds

(RMS Ampere) 2 Seconds
800
500

Rate-of-Rise of On-State Current, Non-Repetitive

Critical Rate-of-Rise of On-State Current, Repetitive

Average Gate Power

Dissipation,

Storage Temperature,

A/jus t

A/jus t

2 Watts

Pq(av)

-40C to +150C

T stg

Operating Temperature, Tj

.-

-40C to +125C

2000 Lb. 10%

Mounting Force Required

8.9

fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5 ms short circuit current rise time.

KN

Vqrm;

10%

20 volts

>

I
9*9

C397/C398

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MINI.

TYP.

Irrm

MAX.

UNITS

20

mA

TEST CONDITION
Tj = +25C

and

Idrm
Repetitive Peak Reverse
and Off-State Current

20

Irrm

45

mA

Rejc

Critical Rate-of-Rise of

dv/dt

200

.05

.06

500

C/Watt
V//usec

Off-State Voltage (Higher

values may cause device
switching)

Gate Trigger Voltage

Peak On-State Voltage

v DRM

V RRM

Junction-to-Case (DC) (Double-Side Cooled)

Tj = 125C, Gate Open. V DRM = Rated,

Linear or Exponential Rising Waveform.

Iqt

VGT

VTM

minimum

dv/dt selections available

50

150

75

300

15

125

1.25

3.0

0.15

2.7

3.0

mAdc

Vdc

V RM

td

"

T c = +25C, V D =
T c = -40C, V D =
T c = +125C, V D =

6 Vdc,
6 Vdc,

6 Vdc,

0.5

___

tq

jUsec

jusec

T c = +25C,

Ohms
Ohms
Ohms

= 3

<

Amps Peak.
.01%. Pulse Width = 1 ms.

TM

= 3000

(1)
(2)
(4)

C397

T c = +25C, I TM = 50 Adc, VDRM Gate

(3)

Volts

max.

//sec

C398

RL
RL
RL

T c = -40C to 25C, V D = 6 Vdc,

R L = 3 Ohms
T c = 25C to +125C, V D = 6 Vdc,
R L = 3 Ohms
T c = 125C, VDRM R L = 1000 Ohms

Supply: 20 volt open

Conventional Circuit
Commutated Turn-Off
Time (with Reverse
Voltage)

(.632)

consult factory.

Duty Cycle
Turn-On Delay Time

Exponential dv/dt Higher

DC

V RR m

and

Thermal Resistance

Gate Trigger Current

Tj = 125C

Idrm

DC

VDRM

20

35

(5)

rise time,

circuit,

20 ohms, 0.1

tt.ttt

T c = +125C
I

TM = 500 Amps.

V R = 50 Volts Min.
VDRM (Reapplied)
Rate-of-rise of reapplied off-state
voltage = 20 V//Ltsec (linear)

di/dt = 25 Amps/^sec
Repetition rate = 1 pps.
(8) Gate bias during turn-off interval =

(6)

Commutation

(7)

C398

30

40

(1)

C397

45

60

(2)

volts, 100 ohms

T c = +125C
I

TM =500 Amps.

VR =
VDRM

50 Volts Min.
(Reapplied)
(5) Rate-of-rise of reapplied off-state
(3)

(4)

= 200
Commutation

voltage

V//usec (linear)

di/dt = 25 Amps//isec
Repetition rate = 1 pps.
(8) Gate bias during turn-off interval =

(6)
(7)

volts,

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

/isec

tq(diode)

(1)
(2)
(4)

C397

40

60

T c = +125C
I TM = 500 Amps

VR =
VDRM

Volt
(Reapplied)
(5) Rate-of-rise of reapplied off-state
(3)

C398

voltage =

200
Commutation

V//isec (linear)
di/dt = 25 Amps/yusec
(7) Repetition rate = 1 pps.
(8) Gate bias during turn-off interval =
(6)

volts,
(Consult factory for specified

maximum

100 ohms

100 ohms

turn-off time.
j-fDelay time may increase significantly as the gate drive approaches the Iqj of the Device Under Test,
ttt Current risetime as measured with a current probe, or voltage risetime across a non-inductive resistor.

960

C397/C398

WAVE CURRENT RATING DATA

SINE

lOOOO
I

|
!
I

t
c V
? \^-

<&
^z^

xtf)

s*^
t^^

<;

<."<

tf

? v>v"^400

60

^^^

m^
!_-**-

K>

2SQ0

5000, INV PARA LLE

CM

00

"

5ft, .Z^f

_
(0,C

oc

>500

5000

5ft, -Z M f

20 ft, -2/if
WITH INVERSE

-K>,0OO

20ft, 2^f

PARALLEL 0100E
PULSE BASE WIDTH (^SEC)

PULSE BASE WIDTH t^SEC)

1.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

2.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)

20fl, 2 M f

SNUBBER

CIRCUI1r

s^>
J

**^-

s<=-r,

^*S s

-|-

"><*

WAT"r = RF corJD n
t
1

f P

\^

V.

I000

I00

10,000

PULSE BASE WIDTH (^SEC)

3.

ENERGY PER PULSE FOR SINUSOIDAL PULSES

NOTES:
(Pertaining to Sine and Rectangular or
1.

2.
3.

4.

<

Wave Current

Ratings)

Switching voltage
800 volts.
800 V.
Reverse voltage applied = Vr
Max. energy dissipated during reverse recovery is 15%
of total W-S/P shown or 0.03 W-S/P whichever is least
for operation with inverse diode.
Required gate drive:
20 volts, 65 ohms, 1 Msec risetime for less than 100

<

amps/Msec

5.
6.
7.

20 volts, 20 ohms, 5 Msec risetime

100 amps/Msec.
RC Snubber ckt. = .2 Mf, 51}
Double-Side Cooled.
Values of W-S/P are for Tj = 125C.

961

for greater than

C397/C398

RECTANGULAR WAVE CURRENT RATING DATA

DUTY CYCLE - 25%

DUTY CYCLE - 50%

60
1000

1000

9O0
800
700
600

900
800
700
600

60

400

400

500
1000

1000

400

400
300

2500
f 'U,

-S E

200

'!* SCcow
3
5000

5000

100

RATE OF RISE OF ON-STATE CURRENT-lA/^iSEC)

RATE OF RISE OF ON-STATE CURRENT-lA/^iSEC)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS di/dt (Tc = 65 C)

6.

1000

1000

900
800

900
800

700
600

700
600

500

500

400
300

PL L. 3E S

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (Tc = 65C)

400

400

400

E *

100

10

100

10

4.

2500

SECO vo
300
1000

1000

200

PL>L Si

200

fc

10

l^SEc

>/V0

25C10

2500
100

10

RATE OF RISE OF ON-STATE CURRENT-IA/^tSEC)

00

RATE OF RISE OF ON-STATE CURRENT-(A/^.SEC)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90C)

7.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. di/dt (T c = 90 C)

I
NOTES: (SEE SINE

WAVE DATA)

962

C397/C398

WATT-SECOND PER PULSE

w.^tf/l

L^-My
s

-^s,*

^Ss
Jf

N^

^^i

>

^
^

"v

V"""
<

8.

ENERGY PER PULSE

AND PULSE WIDTH

VS.

PEAK CURRENT

(di/dt

= 100 A/jusec)

^c*

"-i/

I0K

1000

100

PULSE BASE WIDTH-( M SEC)

nV
^<^
:%

*t,

Xv

s*

\'<)

9.

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH (di/dt = 25 A/^sec)

X*
S

^ii

100

I0K

I000

PULSE BASE WIDTH (^SEC)

"^

^- J

v> N.V
*^c

ENERGY PER PULSE

AND PULSE WIDTH

VS.

PEAK CURRENT

(di/dt

= 5 A/jusec)

</

<*>*

10.
.

K
V^/

s^

"V

NOTES: (SEE SINE

Xi

1000

PULSE BASE WIDTH-(fiSEC)

963

WAVE DATA)

C397/C398
300,000
250,000

o
UJ
V)

200,000

!5C^^^ ^*125C

150,000

<
1

1000

100,000

80,000
INITIAL Tj

n
> Ul
<o
S

15,000

"!<

lOflOO

UJ

-40"C TO + I25 C

IE
Ul. .Ul

8,000

XOgj
6,000
100

5,000

10

PULSE BASE WIDTH (mSEC)

MAXIMUM ON-STATE CHARACTERISTICS

11.

I.5

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

14.

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING
l

^Wl
\

'*%
sJ

'

i_*s:
^?>
<PvS
*?
4v-

^T^fei.

'+

NOTES:

^s

-40C

2.

^25C

l^20V,

o'

locus of possible dc trigger points lies outside the

boundaries shown at various case temperatures.
20V 20 is the minimum gate source load line when
rate of circuit current rise
1 00 amp/jus or anode rate
of current rise
200 amps//us (Tp = 5 us min., 0.5
Ms max. rise time.)
Maximum long term repetitive anode di/dt 500
amps/jus with 20V 20n gate source.

>

>

^I25C

The

20 a

INSTANTANEOUS GATE CURRENT-(AMPERES)

12.

GATE TRIGGER CHARACTERISTICS AND

POWER RATINGS

8,000

Mill

FOR SINE WAVE

<0
ID

It'.

1600/

O
4
O

7,000

PULSE WIC)TH

800A

100

400A

K
K

6,000

200A

ilk

<D
Xu

100 A

5,000
2S
0.1-

50A
INIT IAL Tj - -4 iC "C

4,000

TO +I25*C

10

40

60 80100

10

CYCLES AT 60 Hz
13.

100

REVERSE

SURGE (NON-REPETITIVE) ON-STATE CURRENT

15.

I00(

di/dt -iA/ii S)

TYPICAL RECOVERED CHARGE

(125C)

SINEWAVE CURRENT WAVEFORM

964

C397/C398

u
S

01

_i

<
S

double: S DE
LJ

COOLING

.001

z
<

.0001
.0001

.001

.01

10

TIME-SECONDS
16.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

OUTLINE DRAWING

DECKUAL

SYM

INCtHES
MIN.
MAX.

.240

.110

.245

.186

.191

.060

.075

G
2.200

2.500

.011

.019

.030

.130

.056

1.000

.030

.060
1.065
.096
.150
1.345

.130

1.300

R
S

STRAIGHT LEAD

965

6.096
2.794
6.223
4.724
1.524

.067
1

2.200
.137

2.150
.083
12.360
.153

MAX.
6.604
3.302
4.851

1.905

36.32

1.065

T
U

M.N 1.
MIN.

1.430

T= LENGTH OF

.260
.130

METFIIC

27.051

55.88
2.794
.762
1.422
25.40
.762
3.302
33.02

63.50
3.483
3.302
1.524
27.05
2.438
3.810
34.16
54.61

1.70

309.9
3.480

2.11

313.9

3.886

High Power

C440

Silicon

Controlled Rectifier
1300 Volts

900AAvg

AMPLIFYING GATE

The General

Electric C440 Silicon Controlled Rectifier is designed for phase

control applications. This is an all-diffused Press-Pak device employing the
field-proven amplifying gate.

FEATURES:

High di/dt Ratings

High dv/dt Capability with Selections Available
2
Excellent Surge and I t Ratings Providing Easy Fusing
Guaranteed Maximum Turn-Off Time with Selections Available
Rugged Hermetic Glazed Ceramic Package Having 1 " Creepage Path

IMPORTANT: Mounting

instructions

on the

last

page of this specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM l

VOLTAGE. V RRM

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

500 Volts
600
700
800
900
1000
1100
1200
1300

500 Volts
600
700
800
900
1000
1100
1200
1300

600 Volts
700
800
900
1000
1150
1250
1400
1500

TYPE

C440E

C440M
C440S

C440N
C440T
C440P
C440PA
C440PB
C440PC
1

NON-REPETITIVE PEAK
REVERSE VOLTAGE, V RSM 1

Half sinewave waveform, 10 msec max. pulse width.

Average On-State Current, It(av)

Depends on Conduction Angle (See Charts 1 and 2)
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)
13,000 Amperes
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TS m (50 Hz)
12,000 Amperes
Critical Rate-of-Rise of On-State Current (Non-Repetitive)t
800 A/jus
Critical Rate-of-Rise
2
I

>

(for fusing)

(for times

(for fusing)

(at 8.3 milliseconds)

2
I

400

of On-State Current (Repetitive)t

1.5 milliseconds)

A/jus

(RMS Ampere) 2 Seconds

2
700,000 (RMS Ampere) Seconds

See Figure 7

340,000

Peak Gate Power Dissipation P GM

Average Gate Power Dissipation, Pg(av)
Storage Temperature, T stg
Operating Temperature, Tj
Mounting Force Required

200 Watts

@ 40 jusec Pulse
5 Watts

-40 C to

-40C to

+150C
+125C

3000 Lbs. + 500 Lbs. 13.3 KN + 2.2 KN-0

NOTES:
t di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
20 ohms gate trigger source with 0.5 (Js short circuit trigger current rise time.

966

Vdrm <1000 Volts;

20

volts,

C440

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Currents

MIN.

!drm

TYP.

MAX.

UNITS

10

15

mA

T, = +25C,

15

35

mA

Tj=+125C, V = V DRM

0.04

C/Watt

TEST CONDITIONS

V DRM

V RRM

and

Irrm
Repetitive Peak Reverse
and Off-State Blocking
Currents

!rrm

Thermal Resistance

R0jc

Critical Rate-of-Rise of

dv/dt

200

!drm

V/jUsec

Off-State Voltage (Higher

values may cause device
switching.)

Holding Current

Junction-to-Case

Latching Current

Double-Side Cooling

Tj = +125C, Rated V DRM During Linear

Exponential Rising Waveform. Gate Open.

minimum

Ih

dv/dt selections available

500

mAdc

Turn-On Delay Time

td

Vdrm
(.632)

consult factory.

T c = +25C, Anode Supply = 24 Vdc.

Initial

DC

Exponential dv/dt =
Higher

DC

=V RRM

and

On-State Current = 2 Amps.

.25

Adc

T c = +25C, Anode

"

0.7

"

//sec

T c = +25C,

Voltage = 24 Vdc.
Load Resistance 12 Ohms Max.
I T = 50 Adc, Gate Supply:
20 Volts, 20 Ohms, 0.1 /isec Max. Rise

Time
Gate Pulse Width

10

/isec

Necessary to Trigger

DC

Gate Trigger Current

See Figure 10 for

Circuit, 5

!gt

150

300

Tc =

125

T c = +125C,

Drive Conditions

DC

.15

Recommended Gate

Peak On-State Voltage

V GT

V TM

1.65

mAdc

Vdc

Commutated

125

VD
VD

6 Vdc,

= 6 Vdc,
= 6 Vdc,

RL
RL
RL

T c = -40C to +125C, V D =
R L = 3 Ohms

= 3

Ohms

= 3

Ohms

Ohms

6 Vdc,

T c = +125C, V D = Rated V DRM

R L = 1000 Ohms
Volts

jusec

Turn-Off Time

-40C,

T c = +25C, IT = 3000 Amps

(1)

(2)
(3)
(4)

Open

Supply: 10 Volt

0.1 Msec Rise Time.

T c = +25C, V D =

Cycle
Circuit

Ohms,

Gate Trigger Voltage

See Figure 10

T c = +25C, Gate

Peak.

Duty

<0.01%

T c = +125C
I TM = 500 Amps. Peak

V R = 50 Volts Min.
V DRM Reapphed

Rate-of-Rise of Reapplied Off-State

Voltage = 20V//usec (linear)
(6) Commutation di/dt = 25 Amps//isec.
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
(5)

Volts, 100
*Consult factory for

maximum

Ohms

tq specification.

I
967

C440
o

'30

50-60 Hz

iH_JIL

QC

100

*"

80

180

CO NDUCTION

lOOt

-%

01

3 70
3 60
m

20

CONDUCTI ON

PERCENT \

1 40

<X

30

50

[\

30"

90

ISO

120

DC

CYCLE

121/2

1/4

DC

75

50

25 33 1/3

<

s
400

600
800
1,000
1,200
1,400
1,600
AVERAGE ON- STATE CURRENT -AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM -

1,400
1,600
800
1,000 1,200
600
AVERAGE ON-STATE CURRENT -AMPERES

400

200

2,000

1,800

2,000

1,800

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM DOUBLE-SIDE COOLED

DOUBLE-SIDE COOLED
10,000

zv^y\ DC
CO

<Dt C

l(31

3C

A NGLE:

12

S>
F

90

ER

;e

\IT

OUTY CYCLE:

il/4>

33

1/3

j5ft \

/
'/

r 52}> DC
1/

'*/

wv

rtr

WA

:::

180

ANG

!,,

.-.

V-

.E

100

10,000

1,000

100

AVERAGE ON-STATE CURRENT AMPERES

"1

DUTY CYCLE
1

V//A

Jjt/i

..

1,000

AVERAGE ON-STATE CURRENT- AMPERES

AVERAGE ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

AVERAGE ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

1,000

*N

COOLED

o mal

AMBIENT)

z
l:<9
.

EXCHANGER

,_

TO

800

Br*-.-

DOUBLE-SIDE

(CASE

HEAT

C/W
0.025
0.04
0.05
0.06
0.08

OOOJ

i"**

0.10
0.125
0.15

oo^JJOm
oooooo

80 CONDUC TIOI>t AN GLE

JSt Rec s 0.0 JbC /W

PEFiCEN T DUTY CYC LE

33 /3
USi 8 CS > 0.(JOS" C/W

20

5.

30

40
50
60
TO
AMBIENT TEMPERATURE-C

80

10

90

AVERAGE RECTANGULAR ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

6.

968

20

30

40
50
60
70
AMBIENT TEMPERATURE -C

0.20
0.30

80

90

AVERAGE HALF SINEWAVE ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

600
500
It

400
(fl

IS

300

200

80
SO
90
40
30

20

2*
2

7.

2.0

1.0

PULSE BASE WIDTH (MILLISECONDS)

4.0

3.0

INSTANTANEOUS ON-STATE VOLTAGE- VOLTS

SUB-CYCLE SURGE (NON-REPETITIVE)

AND 2 t RATINGS

MAXIMUM ON-STATE CHARACTERISTICS

8.

50.0
40.0

__z:

=_::::

::::

20.0

II

_J&sM

,30.0

10.0

8.0

POSSIBLE D
TRISGER POIN TS

gt^q -<*>
^\

'

-40C

/
25'

S
20V- 2on
LOAC LINE

125 "C
[

.01

.1

10

08

l(

9.

.2

.1

.3

.4

.5

.6.7.8.91.0

2.0

3.0

4.0 5.06.0

INSTANTANEOUS GATE CURRENT - AMPERES

NOTES:
1. Maximum allowable average gate dissipation

TIME (SECONDS)

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE (DOUBLE-SIDE COOLED)

2.

The

3.

Tp

locus of possible

DC

8.010.0

= 5 watts.

trigger points lies outside the

boundaries shown at various case temperatures.

10.

= Rectangular Gate Current Pulse Width.

GATE TRIGGERING CHARACTERISTICS

I4

12

10

(ft

OZ

%i

6
Tj

-I25'C

4
2

NUMBER OF CYCLES
11.

4
(60 Hz)

MAXIMUM ALLOWABLE SURGE (NONREPETITIVE) ON-STATE CURRENT

969

OUTLINE DRAWING

C440
METRIC

DECIMAL
INCHES
MAX.
MIN.
.260

6.096

MAX.
6.604

.110

.130

2.794

3.302

.245

.186

.191

.060

.075

4.724

2.200

.Oil

.030

2500
.

27051
55.88

.019

2.794

130

.762

.056

060

1.000

1.065

63.50
3.483

3.302
1.524

1.422

25.40

.030

.096

.762

.130

.150

3.302

1.300

1.345

1.905

36.32

1.065

4.851

1.524

1.430

LENGTH OF
STRAIGHT LEAD

MIN.

6.223

M.M.

.240

SYM
A

33.02

27.05

2.438
3.810

34.16

2.150

.083

.067

12.200

.137

54.61

12.360 309.9
.153

2.110

1.702

313.9

3.886

3.480

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When the Press-Pak is assembled to a heat sink in accordance with the following general instructions, a reliable and
low thermal interface will result.
1

Sand each surface

to

(GE G322L

that the heat dissipator

will

or

Dow

with 600

viscosity)

Corning

DC

paper just prior

grit

and apply

silicon

oil

(GE

or silicone grease
3, 4,

340

or 640).

adversely

affect

the

electrical

and

thermal

resistances.)

mounting

surfaces be plated with nickel, tin, or silver. Bare alumi-

num

off

Clean off and apply again as a thin film. (A thick film

4.

recommended

is

lightly

Clean

SF1154, 200 centistoke

Check each mating surface for nicks, scratches, flatness

and surface finish. The heat dissipator mating surface
should be flat within .0005 inch/inches and have a surface finish of 63 micro-inches.

2. It

assembly.

or copper surfaces will oxidize in time resulting in

excessively high thermal resistance.

Assemble with the specified mounting force applied

through a self-leveling, swivel connection. The force
has to be evenly distributed over the full area. Center
holes on both top and bottom of the Press-Pak are for
locating purposes only.

HEAT SINK SELECTION MADE EASY

The C440 specification sheet marks the introduction of
two new characteristic curves which should greatly facilitate heat

average

sink selection.

(R#ca ~ 0-3 C/W). It is possible to

between the curves for RflcA-

Figures 5 and 6 plot allowable

These curves have been derived from the following basic

current versus ambient temperature and case-to-

ambient thermal resistance for the two most frequently

equation:

encountered waveforms, 1/3 duty cycle rectangular current

and 180 sinusoidal current waveforms. As soon as the
average forward current and

maximum ambient

Tj =

where:

tempera-

known, the designer can specify a heat sink thermal

resistance. Note that the graphs span the range of heat sinks
from water-cooled (R# C a = .03C/W) to free-air convection
ture are

linearly interpolate

For increased

T A + PAVG x

Rff ]A

Tj = 125C

reliability, the usual practice is to derate Tj

15-30 degrees. Figures 5 and 6 can perform this function
by the simple expedient of raising T A by a like amount.

970

High Power

Silicon

Controlled Rectifier

1800

Volts

750A Avg.

AMPLIFYING GATE

The General

Electric C441 Silicon Controlled Rectifier is designed for phase

control applications. This is an all-diffused Press-Pak device employing the
field-proven amplifying gate.

FEATURES:

High di/dt Ratings

High dv/dt Capability with Selections Available

Excellent Surge and

Guaranteed

2
I

Ratings Providing Easy Fusing

Maximum

Turn-Off Time with Selections Available

Rugged Hermetic Glazed Ceramic Package Having l" Creepage Path

IMPORTANT: Mounting

instructions

on the

last

page of this specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

TYPE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM !

VOLTAGE, V RRM

TRANSIENT PEAK REVERSE

VOLTAGE, V RS 1
iv,

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

1300 Volts
1400
1500
1600
1700
1800

1300 Volts
1400
1500
1600
1700
1800

1470 Volts
1580
1700
1790
1920
2040

C441PC
C441PD
C441PE

C441PM
C441PS

C441PN

Half sinewave waveform, 10 msec max. pulse width.

Depends on Conduction Angle (See Charts

Average On-State Current, Ij(av)

Critical Rate-of-Rise
2
I

>

(for fusing)

(for times

(for fusing)

(at 8.3 milliseconds)

1.5 milliseconds)

150

280,000

See Figure 7

500,000

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pg(av)
Storage Temperature,

and 2)

10,000 Amperes

of On-State Current (Repetitive)f

2
I

11,000 Amperes

Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (60 Hz)

Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM (50 Hz)
Critical Rate-of-Rise of On-State Current (Non-Repetitive)f

A/jus

75 A/jus
Ampere) 2 Seconds

(RMS
(RMS Ampere) 2 Seconds

200 Watts

@ 40 /usee Pulse
5 Watts

T stg

-40C to +150C
-40C to +125C

Operating Temperature, Tj

- 3500 Lbs.
Kn - 15.6 Kn

3000 Lbs.

Mounting Force Required

13.3

I
NOTE:
t di/dt ratings established

ohms

in

accordance with

gate trigger source with 0.5

[is,

EIA-NEMA

Standard RS-397, Section 5.2.2.6 for conditions of

short circuit trigger current rise time.

971

Vdrm < 1300V;

20

volts,

20

C441

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Currents

MIN.

Irrm

TYP.

MAX.

UNITS

10

15

raA

Tj = +25C,

15

35

mA

T, = +125C,

0.04

C/Watt

Junction-to-Case (Double-Side Cooling)

V//usec

Tj = +125C, 0.8 x V DRM Applied, Using

Linear Exponential Rising Waveform, Gate
pen
v LJC
DRM
^"1 t
(,xi\
Fxnonentinl dv/dt P

TEST CONDITIONS

V DRM

V RRM

and

Idrm
Repetitive Peak Reverse
and Off-State Current

Irrm

V DRM =V RRM

and

Idrm
Thermal Resistance

R0jc

Critical Rate-of-Rise of

dv/dt

200

Off-State Voltage (Higher

values may cause device
switching)

T
Higher

DC

Holding Current

DC

Latching Current

minimum

Ih

II

dv/dt selection available

500

.25

mAdc

consult factory.

T c = +25C, Anode Supply = 24 Vdc,

Initial

Adc

On-State Current = 2 Amps.

Tc = +25C, Anode Voltage = 24 Vdc,

Load Resistance

Turn-On Delay Time

td

0.7

Msec

Ohms Max.

Tc = +25C, I T = 50 Adc. Gate

Supply:
rise time

20 Volts, 20 Ohms, 0.1 Msec max.

Gate Pulse Width

10

Msec

Necessary to Trigger

DC

T c = +25C. Gate
Circuit, 5

Ohms,

150

300

Tc =

Drive Conditions

~
-

125

T c = +125C,

DC

.15

Gate Trigger Current

See Figure 10 for

Igt

Recommended Gate
Gate Trigger Voltage

Vgt

mAdc

Vdc

See Figure 10

T c = +25C, V D =

Vtm

2.0

-40C,

T c = +125C,
Volts

VD
VD

6 Vdc,

= 6 Vdc,
= 6 Vdc,

RL
RL
RL

T c = -40C to +125C, V D =
R L = 3 Ohms

RL
Peak On-State Voltage

Supply: 10 Volt
Msec rise time

Open

0.1

VD

= Rated

= 3 Ohms
= 3 Ohms
= 3

Ohms

6 Vdc,

V DRM

= 1000 Ohms

T c = +25C, I T = 3000 Amps.

Peak.

Duty Cycle <0.01%

Circuit

Commutated

Turn-Off Time

125

Msec

(1)
(2)

(3)
(4)
(5)
(6)

(7)
(8)

Contact factory

for

maximum

tq specification.

972

Tc

= +125C
Itm = 500 Amps
V R = 50 Volts Min.
0.8 V DRM Reapphed
Rate-of-Rise of Reapphed Off-State
Voltage = 20 V/Msec (linear).
Commutation di/dt = 25 Amps/Msec
Repetition Rate = 1 pps
Gate Bias During Turn-Off Interval =
Volts, 100 Ohms

II..

140

Mill
1

C441

50-60 Hz

120

100

% DUTY

180"

CYCLE

toot
=*-

CONDUCTION

ANGLE

"^

80

i_
60

\^

\\

60
v

60

3< "

II

0*

ISC

40

DC

X
CO NDL CTK )N ANG

PERCE NT

.E:

_0UT1
CYCL

23 33

30

T3

100

2.3

\
"6.23

"

200

400

600
800
1,000
1,200
1,400
1,600
AVERAGE ON -STATE CURRENT - AMPERES

200

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM DOUBLE-SIDE COOLED

2.

400

600
800
1,000 1,200
1,400
1,800
AVERAGE ON- STATE CURRENT -AMPERES

2,000

1.800

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM DOUBLE-SIDE COOLED

10,000

./DC
CO ND

JC

ri

)N

ANGLE:

r*

PEF ICE NT DU TY CYCLE:

I0

'.ooo

as*

33

5o2'IO0

6.25y

1,000

50-60 Hz

Jz"A

VM^ffifa

j.

*r f

CONDUCTION
ANGLE

10

100

"

% DUTY

10,000

1,000

100

AVERAGE ON- STATE CURRENT -AMPERES

3.

K%^_::

rH

"-'-

:.

CYCLE

loot
.

1,000

10,000

AVERAGE ON-STATE CURRENT -AMPERES

MAXIMUM ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

4.

MAXIMUM ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

o
g~ui
1,000

OO

COOLED

PERES
RESISTANCE

g!S8

AMBIENT)

?CO<Z>

5<c<9

PEf CEN T D JTY CYC LE

33 /3
USE
CS > o.<305' C/W

800

"jo?

EXCHANGER

WV-1N3

TO
DOUBLE-SIOE

THERMAL

ujxSo
ii-Ho

(CASE

HEAT

UJ
1-

tn

i 400

400
"">

.04

SL

200

AVERAG

|0

J25
"
.20

.30

Oo

wK,--^-6bbb
OOOOOOOOO

OCfjpama*.

80* CON DUC tioh AN BLE

JSE H ec si 0.0()5*C /W
70
40
60
50
AMBIENT TEMPERATURE --C

40
50
60
AMBIENT TEMPERATURE
5.

obQ n*

.025

MAXIMUM RECTANGULAR ON-STATE

CURRENT VS. AMBIENT TEMPERATURE

MAXIMUM HALF SINEWAVE ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

WHEN USED WITH

VARIOUS HEAT EXCHANGERS
973

C441
#

1000

800

"8
2
*

600
500
"00
300

200

100,000

50,000

UJ

|
T

20,000
10,000

5,000

1-

(
tc

1,000

500

UJ

it*
UJ

g
uj

zziu 1
55 u
<

60
50
40

100

50

irt

20

10

200

^
f
O

UjUJ

to

,o

2.0

1.0

5.0

4.0

3.0

INSTANTANEOUS ON-STATE VOLTAGE -VOLTS

PUL SE BASE WIOTH (MILLISECONDS)

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE AND 2 t RATING

MAXIMUM ON-STATE CHARACTERISTICS

8.

&UAJ,

rrVJ

NT*.

>

POSSIBLE D
TRIGGER POIN TS

"

'

*N
"f

^k

-40'C

/.

/
25' C

^/
129 c

10
.i

08

TIME (SECONOS)

9.

.2

.1

.3

.4

NOTES1. Maximum
2.

3.

10.

""

UJ

to

SW
Z

o|
y<
Id

UJ*

2
a.

Tj

l25C

4
2

NUMBER OF CYCLES
11.

4
(60 Hz)

MAXIMUM ALLOWABLE SURGE (NONREPETITIVE) ON-STATE CURRENT

974

8.0 10.0

GATE TRIGGERING CHARACTERISTICS

!C

<

4.0 5.06.0

allowable average gate dissipation = 5 watts.

v>
u.
_i

3.0

AMPERES

locus of possible

^_

<r

3
O

2.0
-

DC trigger points lies outside the

boundaries shown at various case temperatures.
Tp = Rectangular Gate Current Pulse Width.
The

I4

.6.7.8.91.0

""STANTANEOUS GATE CURRENT

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE (DOUBLE-SIDE COOLED)

a:

.5

20V-20O
LOAD LINE

OUTLINE DRAWING

C441

DECIMAL

M.M.

MIN.

.110

245

.186

.191

.060

.075

6.096

MAX.
6.604

2.794

3.302

MIN.

.130

6223
4.724

4.851
1.905

1.524

36 32

1.430

1.065

27051

2.500 55.88

63.50

6
H

2.200

Oil

.030

.019

2.794

3483

130

.762

3.302

.056

.060

1.000

1.065

.030

.096

.762

.130

.150

3.302

1.300

1.345

1.524

1.422

27.05

25.40

2.438
3.810

33.02

34.16

1.702

2.110

2.150

.067
12 200

.137

T= LENGTH OF

METRIC

INCHES
MAX.
.240
.260

SYM
A

54.61

.083

12.360 309.9

313.9

3.886

3.480

.153

STRAIGHT LEAD

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When

the Press-Pak

is

assembled to

Sand each surface

heat sink in accord-

lightly

Clean

ance with the following general instructions, a reliable and

to

low thermal interface

SF1154, 200 centistoke

will result.

assembly.

(GE G322L
1

Check each mating surface for nicks, scratches, flatness

and surface finish. The heat dissipator mating surface
should be flat within .0005 inch/inch and have a sur-

recommended

viscosity)

silicon

oil

(GE

or silicone grease
3, 4,

340 or 640).

a thin film.

(A thick film
and thermal

Corning

affect

DC

paper just prior

grit

apply

the

electrical

resistances.)

that the heat dissipator

mounting

surfaces be plated with nickel, tin, or silver. Bare alumi-

num

adversely

will

4.
is

and

Clean off and apply again as

face finish of 63 micro-inches.

2. It

Dow

or

with 600

off

or copper surfaces will oxidize in time resulting in

excessively high thermal resistance.

Assemble with the specified mounting force applied

through a self-leveling, swivel connection. The force
has to be evenly distributed over the full area. Center
holes on both top and bottom of the Press-Pak are for
locating purposes only.

HEAT SINK SELECTION MADE EASY

The C441 specification sheet marks the introduction of
two new characteristic curves which should greatly facilitate heat

average

sink selection.

Figures 5 and

for the

ture are

R0ca-

Tj =

where:

T A + P A vc;

x R0] A

Tj = 125C

ambient tempera-

For increased

known, the designer can specify a heat sink thermal

Note that the graphs span the range of heat sinks

reliability, the usual practice

is

15-30 degrees. Figures 5 and 6 can perform

resistance.

from water-cooled (R#ca = -03C/W)

for

possible to linearly interpolate

is

These curves have been derived from the following basic

two most frequently

maximum

It

equation:

encountered waveforms, 1/3 duty cycle rectangular current

and 180 sinusoidal current waveforms. As soon as the
average forward current and

= 0.3C/W).

between the curves

6 plot allowable

current versus ambient temperature and case-to-

ambient thermal resistance

r 0ca

by the simple expedient of

to free-air convection

975

raising

T A by

to derate Tj
this

a like

function

amount.

HIGH SPEED
C444 /C445
Silicon Controlled Rectifier
SEMICOHDUCTORS

600

1100ARMS

Volts

AMPLIFYING GATE

The General Electric C444 and C445 Silicon Controlled Rectifiers are designed for power switching at high frequencies. These are all-diffused PressPak devices employing the field-proven interdigitated amplifying gate system.
FEATURES:

Interdigitated

gate

to

structure

maximize high frequency current switching

capability.

Fully characterized for operation in inverter applications

High di/dt ratings.

High dv/dt capability with selections

Guaranteed

Rugged hermetic glazed ceramic package having l" creepage path.

maximum

available.

turn-off time with selections available.

2200

'

SINUSOIDAL WAVEFORM
2000

180 CONDUCTION

50%

1800

DUTY CYCLE

65C CASE TEMP.

V SW =V R =400V

Ld

<

j-

1600

5X1, .2 5/iF S NU B 3ER

^ 1400
z

1200

rr
=>

1000

UJ
I-

800
to

| 600

2 400
200
100

200

400 600 1000

2,000

4,000

FREQUENCY

10,000 20,000 40,000

100,000

Hz

Equipment designers can use the C444/C445 SCR

in

demanding applications, such

as:

Choppers

Sonar Transmitters

Cycloconverters

Inverters

UPS

DC

Regulated Power Supply

Induction Heaters

High Frequency

to

DC

Converters

FOR SINE WAVE OPERATION

Like the Types C358, C385, C388,

C395 and C398,

Peak Current

the

C444/C445 SCR

Frequency

vs.

Pulse

Width

Case Temperature

976

is

Rated For:

C444/C445

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK 1
OFF-STATE VOLTAGE

TYPES

V DRM

REPETITIVE PEAK
REVERSE VOLTAGE
V RRM

Tj = -40C to +125C

Tj = -40C to +125C

C444/C445A
C444/C445B
C444/C445C
C444/C445D
C444/C445E
C444/C445M
1

Half sine wave waveform, 10

ms max.

2
t

(for fusing) for times

(for fusing) for times

2
I

>
>

Tj = +125C

100 Volts

100 Volts

150 Volts

200
300
400
500
600

300
400
500
600
720

pulse width.

12,000 Amperes

TSM

(RMS Ampere) 2 Seconds

2
600,000 (RMS Ampere) Seconds
190,000

1.5 milliseconds

8.3 milliseconds

800
50

Critical Rate-of-Rise of On-State Current, Non-Repetitivef

Critical Rate-of-Rise

of On-State Current, Repetitive!

A/jus

a /m s

2 Watts
-40C to +150C

Average Gate Power Dissipation, Pg(av)

Storage Temperature,

REVERSE VOLTAGE
V RSM

200
300
400
500
600

Peak One Cycle Surge (Non-Repetitive) On-State Current,

I

NON-REPETITIVE PEAK

T stg

-40C to +125C

Operating Temperature, Tj

3000 Lbs. + 500 Lbs.

Mounting Force Required

13.3

KN

Lbs.

2.2KN-0KN

fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5ms short circuit trigger current rise time.

V^rm;

volts,

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

UNITS

Irrm

"

25

rnA

Tj = +25 C,

20

45

mA

Tj =+125C,

R9jc

0.04

C/watt

dv/dt

200

TEST CONDITION

VDRM

VRRM

and

Idrm
Repetitive Peak Reverse
and Off-State Current

Idrm

Vdrm =Vrrm

Junction-to-Case

Double-Side Cooled

and

Idrm
Thermal Resistance

Critical Rate-of-Rise

of

Tj = +125C, Gate Open. VDRM =

Rated, linear or exponential

V//nsec

Off-State Voltage (Higher

values

may

waveform.

cause device

switching)

Exponential dv/dt Higher

DC

DC

Gate Trigger Current

Gate Trigger Voltage

Igt

VGT

minimum

dv/dt selections available

200

400

Tc =

150

3.0

mAdc

Vdc

V RM

(.632)

consult factory.

T c = +25C, V D = 10 Vdc, R L =

ohm

ohm

T c = +125C, V D = 10 Vdc, R L =

ohm

-40C,

VD

Vdc,

RL

T c = +25Cto+125C, V D =
ohm

10 Vdc,

RL =

= 10 Vdc,

RL =

5.0

Tc =
1

0.25

977

-40C to +25C,

VD

ohm

T c = 25C, V DRM R L = 000 ohms

1

C444/C445

CHARACTERISTICS
SYMBOL

TEST

MIN.

TYP.

VTM

Peak On-State Voltage

MAX.

UNITS

2.5

Volts

TEST CONDITION

T c = +25C, I TM = 2000 Amps.

Conventional Circuit Commutated Turn-Off Time

(with Reverse Voltage)

tq

//sec

V R = 50 Volts min.
V DRM Reapplied

(3)

(4)

10

Duty

T c =+125C
I TM = 500 Amps.

(1)
(2)

C444
C445

peak.

< .01%

cycle

Rate-of-Rise of reapplied off-state

(5)

20

voltage =

200 V/^sec (linear)

Communication di/dt = 25 Amps//usec
Repetition rate = 1 pps.

(6)

(7)

Gate bias during turn-off interval =

100 ohms

(8)

volts,

Conventional Circuit Commutated Turn-Off Time

(with Feedback Diode)

tq

llsec

(diode)

T c =+125C
I TM = 500 Amps.

(1)
(2)

V R = 1.5 Volts
v drm Reapplied

(3)
(4)

C444
C445

15

25

(5)

Rate-of-Rise of reapplied off-state

(6)

= 200
Commutation
voltage

V/^tsec (linear)
di/dt = 25 Amps//usec
Repetition rate = 1 pps.

(7)

Gate bias during turn-off interval =

100 ohms

(8)

volts,
(Consult factory for

maximum

turn-off time

WAVE CURRENT RATING DATA

SINE
'**

>-,

\*

r=

_<-,? e--

Kf^

L_

'-v

s
>

I0.00C
15,0

aooc

"<s

v^ ,50C

(
v <i>.

&s

V s 60

"'ss400

s^ ;o

5,000

,0()0

^2,000

30

1,000

1,000

i_20,OC

Nv

\400

>, 5,000

^.

10,00

25,000

-J

--20,000
1

100
100

1,000

PULSE BASEWIDTH

10,000

1,000

- /lS

10,000

PULSE BASEWIDTH -/iS

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 65 C)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90 C)

"\

=fctttt
^WATT -SECOND20

1M0

'

^5

S,

NOTES:
_

^2

-V, tt,40t)

..05

(Pertaining to Sine and Trapezoidal

5-V,-

25 Vs

5A,.2B^f
h

88" c

T; (

1.

2.

I00

PULSE BASEWIDTH
3.

1,000
/iS

ENERGY PER PULSE FOR SINUSOIDAL

PULSES 978

<

Switching voltage
400 volts.
Reverse voltage <400 volts.

3.

R-C Snubber/5f2,

4.

Double-side cooled.
See chart for required gate drive.

5.

54 ov
L

Wave

Current Ratings)

.25fii

TRAPEZOIDAL WAVE CURRENT RATING

C444/C445
10000

ft
/,.

-2^

'

V
v

^X

1000

s^r

^ -V^
V
sV
V
&%^
"

*K*

Oo

.':^ V
oS,

!TL
>ii,iycu-

uo
+%r

>

INI

*o,

SQUARE WAVE
400V, 5fl,.2V F

/ sw

R <

i/

400V

l"cASE *

100

65'C

III

10000

1000

100

10

PULSE BASE WIDTH

-ju

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

4.

10000

l<*

&-^
Vj

<-n

w
s

1000

* *a.

SgaXte->
"""Vo 5>TV

^N?
>
2o

Sti rf

^U_>

s^

'rJ-SAi?"

on si?

sw 400V, 5a,.25pF
< 400 V
9 O'C
rC A SE
/

'r

1_

100

III

10000

1000

100

10

PULSE BASE WIDTH-juS

5.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)

SQUA-(t WAVt
- + di/dt = IOOA/j

--di/dt

lOOA/^s

""

400V

VSW

5Q,

.25/iF

|r^

Vp < 400V
Tj'li!5 # C

0<

s^e

Sf
o

1000

N.o
>
>

S/
r'\!

^0j?5
100

"10

1000

100

PULSE BASE WIDTH -juS

6.

ENERGY PER PULSE VS. PEAK CURRENT

AND PULSE WIDTH
979

10000

C444/C445

S^

DOUBLE SIDE COOLING

.01

/
Ti =

or.

I25*C

z
<

7.

.001

3.0

2.0

ON-STATE VOLTAGE

001

.01

.1

VOLTS

100

10

TIME -SECONDS

MAXIMUM ON-STATE CHARACTERISTICS

8.

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE

j&

TM"

-vOjgeC,

SOOOA

r\

ooo*-

U-U
J1,000
A

ii t
p JL SE

DTH

III

"350 A

"~IOOA

9.

100

10

PULSE WIDTH (MSEC)

REVERSE DI/DT -AMPERES/MICROSECOND

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING

10.

TYPICAL RECOVERED CHARGE

(125C)

50

"2
5

~20V,

J^
5

"+

^fc

Ul

<

>

V/
/V->.

-+$
^v~
V-

>
LLi

l-

o
tn

t>

NOTES:

*&

u
2
z

^5C

V)

-I25C

III

locus of possible

2.

Tp =

3.

20V-20n

points

lies

outside the

rectangular gate current pulse width.

is

the

minimum

rate of circuit current rise

gate source load line

> 100 Amp/jusec.

when

Maximum

long-term repetitive anode di/dt = 500 Amps/jusec.

with 20V-20!2 gate source.
I

.2

DC trigger

boundaries shown at various case temperatures.

\ .-"-"""'^
" <"

The

5
INSTANTANEOUS GATE CURRENT
I

11.

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS

980

C444/C445

OUTLINE DRAWING

METRIC

DECIMAL
INCHES
MIN.
MAX.

SYM
A

.240

.260

.110

.130

C
D

.245
.186

.191

.060

.075

MAX.

6.096
2.794
6.223
4.724
1.524

6.604
3.302
4.851

1.905
36.32

1.430

1.065
2.500

27.051

2.200

.011

.019

55.88
2.794

.030

.130

.762

1.422
25.40

.056

.060

1.000

1.065

.030

.096

.762

.130

.150

1.300

1.345
2.150

3.302
33.02

.067

.083

1.702

12.200

12.360

.137

.153

309.9
3.480

T= LENGTH OF

M.M.
MIN.

63.50
3.483
3.302
1.524

27.05
2.438
3.810
34.16
54.61
2.11

313.9

3.886

STRAIGHT LEAD

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When

the Press-Pak

is

Sand each surface

assembled to a heat sink in accord-

lightly

to

low thermal interface

SF1154, 200 centistoke

(GE G322L

Check each mating surface for nicks, scratches, flatness

and surface finish. The heat dissipator mating surface
should be

It

is

will

with nickel or
will oxidize in

tin.

or

Dow

viscosity)

Corning

DC

paper just prior

grit

apply

silicon

oil

(GE

or silicone grease
3, 4,

340 or 640).

adversely

affect

the

electrical

and

thermal

resistances.)

63 micro-inches.

recommended

Clean

Clean off and apply again as a thin film. (A thick film

within .0005 inch/inches and have a sur-

flat

face finish of
2.

will result.

assembly.

with 600

off and

ance with the following general instructions, a reliable and

Assemble with the specified mounting force applied

through a self-leveling, swivel connection. The force
has to be evenly distributed over the full area. Center
holes on both top and bottom of the Press-Pak are for
locating purposes only.

that the heat dissipator be plated

Bare aluminum or copper surfaces

time resulting in excessively high thermal

resistance.

981

HIGH SPEED
Silicon

C447/C448~1

Controlled Rectifier
1200 Volts, 1000 Amps RMS

AMPLIFYING GATE

The General Electric C447 and C448 Silicon Controlled Rectifiers are designed for power switching at high frequencies. These are all-diffused PressPak devices employing the field-proven, interdigitated amplifying gate
system.

FEATURES:

Interdigitated

gate

structure

maximize high frequency current switching

to

capability.

Fully characterized for operation in inverter applications.

High di/dt

High dv/dt capability with selections available.

Guaranteed maximum turn-off time with selections

Rugged hermetic glazed ceramic package having

ratings.

"

available.

creepage path.

2,000
,
UJ

uj

1,800
1,600

0-

s
<

1,400

1,200

UJ
a:

1,000

UJ

800
SINUSOIDAL WAV :form

<
<n

z
o
* 400
<
ui
o.

TY

600

200

65C CASE

:yc L

TEMPERATUR E

800V SWITCHING
I5il, .25p.F

SNUBBER

10,000

1,000

100

FREQUENCY

Equipment designers can use the C447/C448

Choppers

SCR

(Hz)

in

demanding

applications, such as:

Sonar Transmitters

Cycloconverters

DC

Inverters

Induction Heaters

DC

Regulated Power Supplied

Radio Transmitters

High Frequency

to

Converters

FOR SINE WAVE OPERATION

like the Types C358, C385, C388,

C395 and C398, the C447/C448 SCR

Peak Current

Frequency

vs.

Pulse Wdith

Case Temperature

982

is

rated for:

C447/C448

MAXIMUM ALLOWABLE RATINGS

VOLTAGE, V RRM

VOLTAGE, Vdrm 1

600
700
800
900
1000
1100
1200

600
700
800
900
1000
1100
1200
ms max.

600 Volts
720
840

500 Volts

500 Volts

Half sinewave waveform, 10

Tj = +125C

-40C to +125C

T, = -40C to +125C

C447/C448E
C447/C448M
C447/C448S
C447/C448N
C447/C448T
C447/C448P
C447/C448PA
C447/C448PB

NON-REPETITIVE PEAK
REVERSE VOLTAGE, Vrsm 1

REPETITIVE PEAK REVERSE

REPETITIVE PEAK OFF-STATE

TYPES

960
1080
1200
1300
1400

pulse width.

10,000 Amperes

Peak One-Cycle Surge (Non-Repetitive) On-State Current, I TSM

It (for fusing)

for times

\H

for times

(for fusing)

Critical Rate-of-Rise

>
>

(RMS Ampere Seconds

2
415,000 (RMS Ampere) Seconds
190,000

1.5 milliseconds

8.3 milliseconds

""

of On-State Current, (Non-Repetitive)t

50

Critical Rate-of-Rise of On-State Current, (Repetitive)f

_....

0f

Tstg

'

Operating Temperature, Tj

"

Mounting Force

max. rated
Standard RS-397, Section 5.2.2.6 for conditions of

in accordance with
t di/dt ratings estabUshed
trigger current rise time.
20 ohms, gate trigger source with 0.5ms short circuit

+ i 5 oc

^ +125

+ 500 Lb _
+ 22Kn _

^^

300Q

EIA-NEMA

/'

2 Watts

^,
n
Average Gate Power Dissipation, P G (av)

Storage Temperature,

~ iS
A'^

Lb.

V DRM

0Kn

20

volts,

983

C447/C448

CHARACTERISTICS

TEST

SYMBOL

Repetitive Peak Reverse

and Off-State Current

MIN.

TYP.

MAX.

UNITS

25

mA

Irrm

TEST CONDITION

Tc = +25C

and

Idrm
Repetitive Peak Reverse
and Off-State Current

Irrm

20

45

mA

Critical Rate-of-Rise of

V DRM

V RRM

T c = +125C

and

Idrm
Thermal Resistance

Rtfjc

dv/dt

400

500

0.04

C/Watt
V/yusec

Off-State Voltage
(Higher values may cause
device switching)

v DRM

V RRM

Junction-to-Case, Double-Side Cooled

Tj = +125C, Gate Open. 80% of V DRM

Reapplied, Linear or Exponential Rising

Waveform.

Exponential dv/dt =

Vdrm

(.632)

T
Higher

DC

DC

Gate Trigger Current

Igt

V GT

Gate Trigger

minimum

dv/dt selections available

200

3.0

mAdc

consult factory.

400

T c = +25C, V D =
T c = -40C, V D =

6 Vdc,

150

T c = +125C, V D =

6 Vdc,

Vdc

Tc =

RL =

Peak On-State Voltage

V TM

2.9

Volts

125C,

tq

/Usee

Voltage)

C448
C447

25

40

25C,

to

= 3 Ohms
= 3

Ohms

= 6 Vdc,

VD

= 6 Vdc,

V DRM R L
,

<

= 1000

Ohms
Peak.

.01

(2)

T c = +125C
I TM =500 Amps.

(1)

Ohms

VD

T c = +25C, I TM = 2000 Amps.

Duty Cycle

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

= 3

Ohms

= 3

Tc =

to +125C,

RL
RL
RL

Ohms

T c = -40C

5.0

RL
0.25

25C

6 Vdc,

(3)

VR

(4)

80%

(5)

Rate-of-Rise of Reapplied Off-State

Voltage = 400 V/;llsec (linear).

= 50 Volts Min.
of V DRM Reapplied

di/dt = 25 Amps//nsec
Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
(6)

Commutation

(7)

Ohms.

Volts, 100

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

tq (diode)

/isec

(1)
(2)

C448
C447

T c = +125C
I TM = 500 Amps.

(3)

VR

(4)

80%

1.5 Volts
of V DRM Reapplied
(5) Rate-of-Rise of Reapphed Off-State

25

40

Voltage = 400 V/isec

(6)

Commutation

di/dt

(linear).

= 25 Amps/jusec

(7) Repetition Rate = 1 pps

(8) Gate Bias During Turn-Off Interval

Volts, 100
|

Consult factory for

maximum

turn-off time.

984

Ohms

C447/C448

SINEWAVE CURRENT RATING DATA

10,000

9,000
8,000
7,000
6,000
5,000

k/U

"vjfs*

h%
PER

b8
"-"-s^

2,000

UJ

5C

2500

y400

^I00(

60

00

a.

'poo
w feoo

50V

700

ov

7 600
z

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

500
OO

PEAK

OO

^20C 00

OO

3D

PULSE BASE WIDTH(^SEC)

2.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)

800
400
1000
300
600
PULSE BASE WIDTH (<i SEC)

3.

ENERGY PER PULSE FOR SINUSOIDAL

PULSES

NOTES:

PULSE BASE WIDTH

<

3.

800 Volts.
Switching Voltage
Reverse Voltage Applied = Vr <800 Volts.
R-C Snubber Circuit = .25m/. 15n

4.

Double-Side Cooled.

1.

2.

(/tSEC)

985

TRAPEZOIDAL WAVE CURRENT DATA

C447/C448

10000
1

i
j

8000
6000

yt.

'I

NOT

ES:

2.

PULSE WIDTH

;4000

'

VR = V R < 800V
TC = 65C

1.

IOOA/jxSEC
RC SNUBBER: 0.25ixF,l5Q

3. di/dt =

4.

S6/

DOUBLE SIDE COOLED

z 2000

il

UJ
tr
oc

1000
800
H

600

%V

CO

s^v

E 400

4-CU

<
UJ
Q-

200

100

20

4.

200 400600 1000 2000 4000

PULSE BASE WIDTH (j. SEC)

40 60

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

10000
1

8000
6000

X-

MM

NOT

PULSE WIDTI-

:s--

2.
3.

di/dt

4.

RC SNUBBER: 0.25ixF,l5fl
JOUBLt SIDE COOL.ED

5.

z 2000

=
=

IOOA//J.SEC

<v

UJ

^* V
V* ^

IE
ce
z>
<->

VR < 800V
~
90C

Vr
Tc

1.

c4000

10000

100

1000

<r r,

800
H 600

.^,4v,

CO

400

it-

UJ
0-

NOTES:

<
200

i_

y<1r>

'rt

'rtl

100
10

20

40 60

I00

200

400 600 I000

PULSE BASE WIDTH

(i

2000 4000

I0000

SEC)

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PEAK WIDTH (Tc = 90C)
I0000
'

8000
6000

'

'

-I IM

v\~
I?

UJ

PULSE WIDTH

5 4000
<

z 2000

di/dt =

4.

CURVES DO NOT INCLUDE

><s
800
600

lOOA/^SEC

3.

BLOCKING VOLTASE LOSSES.

TO COMPUTE THIS ON A
"
PER CYCLE BASIS
e = v.u/n
Vj
-'o#HER - Va = AV. BLOCKING

1000

Vs = VR S 800V
2.RC SNUBBER:.25jiF,150

CO

-.4
-%

^ %k

i =

VOLTAGE (V)
.045A
REPETITION

ft

fe

<-?*

fe-

r>

IS?

"T%

"^>?
I00
10

6.

20

40 60

100
200 400 600 1000
PULSE BASE WIDTH (<! SEC)

2000 4000

ENERGY PER PULSE FOR TRAPEZOIDAL

PULSES
986

10000

< 800 Volts."

< 800 Volts.

1.

Switching Voltage

2.

Reverse Voltage

3.

R-C Snubber

4.

Double-Side Cooled

Circuit = 1512, .25

TRAPEZOIDAL WAVE CURRENT DATA

10000

MOTE

1
1

8000
6000
(/)

C447/C448

*T

UJ

~;A<%

2.
3.

{.&*.

PULSE WIDTH

|4000

4.
3

b'-

Vs = 800V
V R < 10V
Tc = 65C
di/dt - IOOA/istc
RC SNUBBER: 0.25^F,l5fl
DOUBLE SIDE COOLED

1.

5.
6.

z 2000
LU
(
tr

1000
800
H 600 f
i

V m^r
VKo

\\
vi>

400

<
UJ
o.

200

"10

20

40 60

2000 4000

400 600 1000

100
200
PULSE BASE WIDTH (^ SEC)

10000

MAXIMUM ALLOWABLE ON-STATE

CURRENT VS. PULSE WIDTH WITH

7.

ANTI-PARALLEL DIODE

(T c = 65C)

10000

m 8000
6000

NOTES:

200 400 600 1000 2000 4000

100
PULSE BASE WIDTH (jiSEC)

40 60

ANTI-PARALLEL DIODE
10000

III

8000
6000

4000

/_

3.

RC SNUB8ER:

4.

di/dt

R-C Snubber

Double-Side Cooled

Circuit =

15n, .25m/

10000

TO COMPUTE THIS ON A
PER CYCLE BASIS

**

Hd

UJ
tr

^fc

cc

'*

P:)
S-

v A (i/f)

I
..

9.

5
^

| 400

0.25/iF,15a

IOOA/iiSEC

\,_
tf

z 2000
1000

3.

4.

V-T

...

PULSE WIDTH

800 P vC
? 600

Reverse Voltage

(T c = 90C)

,
,.

<->

Switching Voltage

MAXIMUM ALLOWABLE ON-STATE

CURRENT VS. PULSE WIDTH WITH

8.

< 800 Volts.

< lOVolts.

1.

2.

>u

VOLTAGE (V)
=.045A
REPETITION

f =

V'
o
s&

>

's

I
20

9.

40 60

200 400 600 1000

PULSE BASE WIDTH (<iSEC)
100

2000 4000

ENERGY PER PULSE FOR SINUSOIDAL

PULSES WITH ANTI-PARALLEL DIODE
987

10000

C447/C448
COIO.OOO

H
AMPEF

B-Onn

*8
o

CURRENT

ATE

8
8
5

DOUBLE SIDE COOLING

.01

s
a:

ui

o
3
o

rj

Tj *

I25"CJ

25C

Ul

<
Iz
<
1-

200

<

I-

UU )
C

'1

35

INSTANTANEOUS ON-STATE VOLTAGE - VOLTS

MAXIMUM ON-STATE CHARACTERISTICS
10.

.001

100

10

.01

101

TIME -SECONDS

ON-STATE CONDUCTION CHARACTERISTIC

11.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

10

PULSE BASE WIDTH (mSEC)

12.

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING

13.

6 8

20

40 60 80KX)

REVERSE

di/dt (A//iSEC)

IO

200

TYPICAL RECOVERED CHARGE

400600

(125C)

NOTES:
1.

The

2.

T p = rectangular gate current pulse width.

20V 20 is the minimum gate source load

3.

locus of possible dc trigger points lies outside the

boundaries shown at various case temperatures.

rate of circuit current rise

>100

long term repetitive anode di/dt =

gate source.

20V - 20f2

.2

.3

.4

.5 .6

.8

INSTANTANEOUS GATE CURRENT

3
-

5 6

IO

AMPERES

14.

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS
988

amp//us.

line

when

Maximum

500 amps/jus with

I000

C447/C448

DECIMAL

SYM
A

INCHES
MIN.
MAX.
.240

.260

.110

.130

.245

.186

.191

.060

.075

G
H

2.200

.011

.030

2.500
.019
.130

6.096
2.794
6.223
4.724
1.524

.056
1.000

1.065

.030

.096

.130

.150

1.300

1.345
2.150

.067

.083

T
U

12.200

12.360
.153

.137

.060

MAX.
6.604

3.302
4.851

1.905

36.32
27.051

1.065

LENGTH OF
STRAIGHT LEAD

M.M.
MIN.

1.430

METRIC

55.88

2.794
.762
1.422
25.40
.762
3.302
33.02

63.50
3.483
3.302
1.524
27.05
2.438
3.810
34.16
54.61

1.702

309.9

3.480

2.11

313.9

3.886

OUTLINE DRAWING

989

HIGH SPEED

C449

Silicon Controlled Rectifier

1800 VOLTS

850 A RMS
AMPLIFYING GATE

The General

Electric C449 Silicon Controlled Rectifier is designed for power

switching at high frequencies. This is an all-diffused Press-Pak device employing the field-proven interdigitated amplifying gate system.

FEATURES:

Interdigitated Gate Structure to

Maximize High Frequency Current Switching

Capability.

Fully Characterized for Operation in Inverter Applications.

High di/dt Ratings.

High dv/dt Capability with Selections Available.

Guaranteed Maximum Turn-Off Time with Selections Available.
Rugged Hermetic Glazed Ceramic Package Having l" Creepage Path.

MAXIMUM ALLOWABLE RATINGS

TYPES

C449PN
C449PS

C449PM

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK REVERSE

VOLTAGE, V DRM

VOLTAGE, V RRM

NON-REPETITIVE PEAK
REVERSE VOLTAGE, Vrsm

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

1800 Volts
1700

1800 Volts
1700
1600
1500

2040 Volts
1920
1790
1700

1600
1500

C449PE

Half sine wave waveform, 10 ms max. pulse width.

Consult factory for lower rated voltage devices.
1

Peak One Cycle Surge (Non-Repetitive) On-State Current, I

TSM
Critical Rate-of-Rise of On-State Current, Non-Repetitivef
Critical Rate-of-Rise

6,500 Amperes

500
300

of On-State Current, Repetitive!

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

A/fis
A/jus

5 Watts
.

Operating Temperature, Tj

40 c to +150C

-40C to +125C

Mounting Force Required

3000
13.3

jj,.

+ 500 Lb.

Lb.

KN + 2.2 KN-0KN

I
f di/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of
20 ohms gate trigger source with 0.5ms short circuit trigger current rise time

990

80% max.

rated

Vn RM

20

volts

C449

CHARACTERISTICS
TEST

SYMBOL

Repetitive Peak Reverse

and On-State Current

'

TYP.

MAX.

10

25

mA

Tj = +25C,

"

45

60

mA

Tj = +125C,

.04

MIN.

!rrm

TEST CONDITIONS

UNITS

VDRM

VRRM

and

Idrm
Repetitive Peak Reverse
and Off-State Blocking

!rrm

Current

!drm

Thermal Resistance

R9JC

Critical Linear Rate-of-

dv/dt

200

C/Watt
V//isec

Rise of Off-State Voltage

(Higher values may cause
device switching)
Higher

Gate Trigger Current

Gate Trigger Voltage

Peak On-State Voltage

Conventional Circuit
Commutated Turn-Off
Time (with Reverse

VDRM

VRRM

and

!gt

VGT

VTM

minimum

dv/dt selections available

200

150

2.8

mAdc
Vdc

Volts

/isec

Voltage)

Double-Side Cooled

Tj = +125C, VDRM =80 Rated, Gate

Open. Exponential or linear rising waveform. Exponential di/dt = .8Vrj R M (.632)/t
consult factory.

T c = +25C, V D =

6 Vdc,

T c = +125C, V D =

6 Vdc,

T c = 25C to +125C,
R L = 3 Ohms

(1)

Ohms

= 3 Ohms

Peak.

T c = +125C

TM

= 500 Amps.
50 Volts
of VDRM Reapplied

(2)

(3)

VR >

(4)

80%

Rate-of-Rise of Off-State Voltage =

200

40

= 3

6 Vdc,

T c = 25C, I T = 2000 Amps.

Duty Cycle < 0.01%.

(5)

60

RL
RL

VD = 6 Vdc,

T c = -40C to 25C, V D =
R L = 3 Ohms

*q

C449 - 60
C449 - 40

Junction-to-Case

V/jusec.

Gate Bias = Open During Turn-Off

Interval,
Volts, 1 00 Ohms
(7) Duty Cycle < .01%
(6)

Conventional Circuit
Commutated Turn-Off

tq

isec

(1)
(2)

Time (with Feedback

(3)

Diode)

(4)

C449 C449 -

60
40

60
40

T c = +125C
I TM = 500 Amps.
V R = 2 Volts, Minimum
80% of VDRM Reapplied

(5)

Rate-of-Rise of Off-State Voltage =

(6)

Gate Bias = Open During Turn-Off

200

V/;usec.

Interval
(7)
f Consult factory for

maximum

Duty Cycle

<

.01%

turn-off time.

I
991

C449
10000

10000

ip'ob

f^llP

f^Cr

1000

N')TES:

SWITC HING VOLTAGE = 400V

REVERSE VOLTAGE < 50V
HC SNUBBER - I5H, 0.1'.bfih
DOUBLE SIDE COOLED

o
<

/tj =Z5

T,= I25C/

100

'C

100

10

100

1000

HALF SINE PULSE BASE WIDTH- MICROSECONDS

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

PEAK ON-STATE CURRENT VS. PULSE

WIDTH FOR Tc = 65C

2.

MAXIMUM ON-STATE CHARACTERISTICS

OUTLINE DRAWING
METF

DECKVIAL

SYM
A

MAX.
.260

.110

.130

.245

.186

.191

.060

.075

6.096
2.794
6.223
4.724
1.524

1.430

1.065
2.200

2.500

.011

.019

55.88
2.794

.030

.130

.762

.056

.060

1.422

1.000

1.065

.030

.096

.762

.130

.150

3.302

1.300

1.345

6.604
3.302
4.851

1.905
36.32
27.051

STRAIGHT LEAD

MAX.

MIN.

.240

T= LENGTH OF

IC

M.W

INCf
MIN.

63.50
3.483
3.302
1.524

25.40

27.05
2.438
3.810

34.16

33.02

2.150

54.61
2.11

.067

.083

1.702

T
U

12.200

12.360

.137

.153

309.9
3.480

313.9

3.886

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When

the Press-Pak

is

assembled to

a heat sink in accord-

3.

Sand each surface

lightly

ance with the following general instructions, a reliable and

to

low thermal interface

SF1154, 200 centistoke

1.

will result.

(GE G322L

Check each mating surface for nicks, scratches, flatness

and surface finish. The heat dissipator mating surface
should be flat within .0005 inch/inches and have a surface finish of 63 micro-inches.
is

recommended

that the heat dissipator

mounting

surfaces be plated with nickel, tin, or silver. Bare alumi-

num

or copper surfaces will oxidize in time resulting in

excessively high thermal resistance.

992

Clean

or

Dow

with 600

off and

Corning

will

adversely

affect

the

DC

paper just prior

grit

apply

viscosity)

Clean off and apply again as

silicon

oil

(GE

or silicone grease
3, 4,

a thin film.

electrical

340 or 640).
(A thick film
and

thermal

resistances.)
4.

2. It

assembly.

Assemble with the specified mounting force applied

through a self-leveling, swivel connection. The force
has to be evenly distributed over the full area. Center
holes on both top and bottom of the Press-Pak are for
locating purposes only.

SCR
550 A Avg. up to 1800 V
AMPLIFYING GATE

The C501

Series of high power devices feature the proven, multi-diffused

construction in a new, larger, pressure-mounted package.

FEATURES:

Short Delay Time

Pressure Contacts

Glazed Ceramic Package with

Reversibility (eliminates

1 "

Creepage Path

need for special reverse polarity units)

Hermetic Seal

Available in Factory Assembled Heat Exchangers or Ready-to-Mount

Higher di/dt Rating

IMPORTANT: Mounting

instructions

on the

last

page of this specification must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK OFF-STATE

AND REVERSE VOLTAGE,

AND REVERSE VOLTAGE,

v drm'v rrm'

TRANSIENT PEAK REVERSE

VOLTAGE (NON-RECURRENT
<5 MSEC), V RSM

Tj = -40C to +125C

Tj = 0C to +125C

Tj = -40C to +125C

700 Volts
800

800 Volts
900

800 Volts
900
1000
1100
1200
1300
1400
1500
1600
1700
1800

TYPE

v drm' v rrm'

C501S

C501N
C501T

1000
1100
1200
1300
1400
1500
1600
1700
1800

900
1000
1100
1200
1300

C501P
C501PA
C501PB
C501PC
C501PD
C501PE
C501PN
C501PS

1400
1500
1600
1700

Depends on Conduction Angle (See Charts 1 and 3)

8000 Amperes

Average Forward Current, On-State

Peak One-Cycle Surge On-State Current, I TSM

Maximum Rate-of-Rise of Anode Current Turn-On Interval (See Chart 11)
(Switching Rates

<

Switch

Switch
2
I

>

(for fusing)

(for times

(for fusing)

(at 8.3 milliseconds)

2
I

Storage Temperature,

175A/;usec
100A/;usec
80A/Aisec

2
130,000 Ampere Seconds
2
260,000 Ampere Seconds
25 Watts

1.5 milliseconds)

Peak Gate Power Dissipation, P G m

Average Gate Power Dissipation, Pq(av)

Peak Reverse Gate Voltage,

<

500V
From <1000V
From <1300V

Switch From

60 Hz)

5 Watts

VGRM

5 Volts

-40C to +125C

T STG

+125 C

Operating Temperature, Tj

"40

Mounting Force Required

-2200 Lbs.
8.9

Assumes heat

dissipatoi thermal resistance less than

1C/W.

993

to

KN

10%
10%

CHARACTERISTICS

C501
TEST

SYMBOL

Peak Reverse and Forward

Idrm

Blocking Current

and

MIN.

TYP.

MAX.

UNITS

1.0

15

mA

Tj = +25C,

15

35

mA

T, = +125C,

.05

C/Watt

TEST CONDITIONS

VDRM

RRM

V,

Irrm
Peak Reverse and On-

*DRM

State Blocking Current

and

VDRM

V RRM

Irrm
Effective

Thermal

Resist-

R0 JC

Exponential Rateof-Rise of Forward Blocking Voltage (Higher values

may cause device switching)
Critical

(DC)
dv/dt

100

Holding Current

100

250

Latching Current

Delay Time

1.5

Gate Pulse Width

10

Tj = +125C,
Gate Open.

mAdc

T c = +25C, Anode

T c = +25C, Anode supply = 24 Vdc, Load

resistance 1 2 ohms max.

/usee

T c = +25C,

fisec

T c = +25C. Gate Supply:

Bias voltage = 960V, Gate

supply: 20V, 10 ohms, 0.5 Msec max.
rise time.

mAdc

75
6.5

"GT

T c = +120C,

TM

Commutated

1.53

T c = +25C,

Volts

300

200

//sec

Turn-Off Time

10 volt open
time.

R L = 3 ohms
10 Vdc, R L = 3 ohms
VD = 10 Vdc, R L = 3 ohms
10 Vdc,

cycle

<

Rated,

T c = +125C

(2)

T = 450 Amps.
= 75 Volts min.
0.5 V DRM Reapplied

(4)

10 Vdc,

RL

T = 1000 amps. peak.

0.01%

(1)
(3)

VR

(5)

Rate-of-rise of reapplied forward blocking voltage = 25V//isec (linear)

(6)

Gate bias during turn-off

Duty
O

yltsec rise

T c = +125C, VD =
1000 ohms
Duty

Circuited

0.1

T c = -40C to +125C, VD =
Rl = 3 ohms

Vdc

0.15

Peak On-State Voltage

ohm,

T c = +25C, VD =
T c = -40C, VD =

225

Gate Trigger Voltage

supply = 20 Vdc.
forward current = 500 amps.

circuit, 5

150

= 0.8 Rated,

Adc

Necessary to Trigger
!gi

VDRM

V//xsec

Initial

Gate Trigger Current

Double Side Cooling

Junction-to-Case

tance. Junction-to-Case

cycle

<

interval,

0.01%

140

I
300
200
400
500
AVERAGE FORWARD CURRENT -AMPERES

100
1.

MAXIMUM ALLOWABLE SINK TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM
(SINGLE-SIDE COOLED)

2.

994

00
200
300
400
500
AVERAGE FORWARD CURRENT- AMPERES

MAXIMUM ALLOWABLE SINK TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM
(SINGLE-SIDE COOLED)

140

100

3.

300
400
500
600
200
AVERAGE FORWARD CURRENT -AMPERES

100

MAXIMUM ALLOWABLE SINK TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

4.

(DOUBLE-SIDE COOLED)

2 00
AVERAGE

600
300
400
500
FORWARD CURRENT- AMPERES

700

800

MAXIMUM ALLOWABLE SINK TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM
(DOUBLE-SIDE COOLED)

/ 60

90

800

Vw>

CONDUCTION ANGLE

600

CONDI CTION

NGLf30

Al

DC

200
300
100
AVERAGE FORWARD CURRENT - AMPERES

50

AVERAGE

AVERAGE FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

5.

4,000

90%

6.

100

150

200

FORWARD CURRENT- AMPERES

AVERAGE FORWARD POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

m 8,000

0%/l8()%/

DC
cor IDUCTIO N ANGL- ES 60%

2,

1,600

30%

/_
0

Ik

\H

Vs

CON DUCT ION ANSLE^

400
AVERAGE

800

400
800
1,200
AVERAGE FORWARD CURRENT- AMPERES

1200

FORWARD CURRENT- AMPERES

EXTENDED FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

8.

995

EXTENDED FORWARD POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

Ij600

C501
T20.000

a.

5 5
[-

10,000

8,000

8 o 6,000

IS
..

a.

400

x
X

t
O

200

H *

-100

PULSE BASE
9.

1.5

WIDTH

10

SUB-CYCLE SURGE AND

MILLISECONDS

IN

t RATING
FOLLOWING RATED LOAD CONDITIONS

10

40

20

6
8 10
CYCLES AT 60 Hz

60

MAXIMUM ALLOWABLE SURGE CURRENT

FOLLOWING RATED LOAD CONDITIONS

wlOOOO

g 8000
I 6000

T.9Rr

Ti|?w.

K 4000
z
UJ
(E

= 2000
I000

800
600
400

200

.2

.4

.6

.8

2.

8. 10.

//

I00

11.

INSTANTANEOUS GATE CURRENT- AMPERES

INSTANTANEOUS ON- STATE VOLTAGE -VOLTS

GATE TRIGGERING CHARACTERISTICS

12.

FORWARD CONDUCTION CHARACTERISTIC

(ON-STATE)

.05

NOTES:
.05 C/\ 1

1.

Add .01C/W
pator interfaces

to

account for

both

case to dissi-

when properly mounted;

e.g.,

R0js

= .06C.
2.

.0-1

K
Ul

DC Thermal Impedance is based on average full cycle

junction temperature. Instantaneous junction temperature may be calculated using the following modifications:

I
.001

o\

I.

.1

TIME-SECONDS
13.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE
996

end of conducting portion of cycle

120 sq. wave add .0065C/W along entire curve
1 80 sq. wave add .0047C/W along entire curve
1 80 sine wave add .0026 C/W along entire curve

end of full cycle

any wave, subtract .0026C/W along entire curve

MIN.

1,500

SNUBBER RESISTANCE

ohms

C501

NOTES:

20

10

Code:

Non-Repetitive High Gate Drive

Repetitive High Gate Drive

Low Gate Drive

Low Gate Drive

Non-Repetitive
Repetitive

Low Gate

Drive

14V/35ohms

Source
Pulse Width, t
p
Current Rise Time, t r

> 20

/Lis

<2

High Gate Drive

20V/10ohms
>10ts
<0.5jUs

*Permissible circuit di/dt excluding snubber discharge. Rerecommended maximum condition

petitive di/dt is
to achieve most industrial requirements for service life. It
meets or exceeds the JEDEC test requirements for certiStd. Sk. 516 (1972). Nonfication set forth in
repetitive di/dt meets the JEDEC 5 sec. rating.

NEMA

the minis is treated separately using

value of snubber resistance indicated above. This

30 years) in combiapplies for long industrial life (20

nation with circuit di/dt.

**Snubber discharge,

mum

50

14.

200 A //is

100

CIRCUIT

COMMUTATING

di/dt

ALLOWABLE REPETITIVE ANDx NON-REPETITIVE INRUSH CURRENT (DI/DT*) AND REQUIRED SNUBBER
RESISTANCE FOR VARYING LEVELS OF SWITCHING VOLTAGE

OUTLINE DRAWING
TABLE OF DIMENSIONS
Conversion Table

CATHODE

SYM.

-=,
_p^D

MIN.

B
C

0.200
0.140
16.000

1.240

'

MAX.
0.240

<

20 000

METRIC
5.08

6.10

3.56

1.260

406.40
31.50

2000

1.000

1.060

25.40

.025

0.64

0.146

3.45

2.03

0.136

.080

.036

NOTES

508.00
32.00
50.80
26.92

3.71
j

50.80

2.000

MM
MAX.

MIN.

* E
F

TERMINAL

DECIMAL INCHES

0.91

NOTES:
'

TERMINAL
PLATED SURFACE

1.

Glazed Ceramic Insulator With 1.00 Inch

(25.40 MM)

Minimum

Surface Creepage.

TERMINAL

(WHITE WIRE)

TERMINAL

(RED WIRE)

I
997

C501

C501

ASSEMBLY OF PRESSPAKS TO HEAT DISSIPATORS

The following instruction
stable thermal

and

is

essential for maintaining low,

3.

with the

electrical resistances associated

Apply

Presspak to heat dissipator surfaces.

1.

a fully tested Presspak

may

.001 inch not including

some minor nicks and

2.

is

used

if

scratches

are

recommended

4.

as

grit

abraided

G322L

bare

tin-plated copper or

use

or LS2037*;

#2 or G322L;
aluminum use SF1154 preferably, or G623 or G322L;
nickle-plated aluminum use SF1154 or G623;
silver-plating is not recommended.
aluminum

use Alcoa

with a fine

wire

full

area.

Center holes on

top and bottom of the Presspak are for locating.

may be
is

compound

surfaces

MOUNTING

evenly distributed over the

and treating

paper, then oil or

recommended. Unplated

vigorously

dis-

Assemble with specified mounting force applied through

a self-leveling swivel connection. The force has to be

NOTES:

as-

a)

sured. Plated surfaces and Presspaks should be lightly

plied

compound

for alumi-

dissipators, bare surfaces

careful attention to cleaning

sanded with 600

bare copper

SURFACE DEOXIDATION AND CLEANING

and copper heat

of grease or

run higher but not exceed

based upon these requirements.)

Although plated surfaces

below. Rotate the Presspak to properly

with test fixtures. (Recommended mount-

num

tribute the applied agent.

INSPECTION OF MATING SURFACES

ing force

silicone oil or thin layer

as indicated

Check each mating surface for nicks, scratches, flames

and surface finish. The Presspak surface has a total indicator reading TIR < .0005 inch and surface "x^finish
prior to factory electrical test in pressure fixtures. The
dissipator surface should be equally as good. The TIR of

also associated

FINAL SURFACE TREATMENT

ap-

should be

brush or

Silicone oil SF1154, 200 centistoke, clear silicone grease

G623, and yellow compound G322L are products of the
General Electric Company; compound Alcoa #2 is a product of Aluminum Company of America; and LS2037 black
compound is product of Arco Company, 7301 Bessemer

Avenue, Cleveland, Ohio.

3M

#2 compound. The
Alcoa #2 should be removed and the recommended
compound applied.

b) Limit maximum joint temperature to 95C, except for those

prepared with SF1154 or G322L, which are limited to

"Scotchbrite" coated with Alcoa

150C.

I
998

High Power

Silicon

C502

Controlled Rectifier

550A

Avg. Up To

2200 Volts

AMPLIFYING GATE

2T

The General

Electric C502 Silicon Controlled Rectifier feature the newly

developed multi-diffusion technology to combine high blocking voltage capability with low on-state conduction losses.

The C502 is designed specifically for phase control applications like DC

motor control and power supplies, cycloconverters and current regulated
inverters.

FEATURES:

High Blocking Voltage Capability

High

t Current Ratings for Ease of Fusing

Rugged Hermetic Ceramic Package with l" Creep and Strike
Guaranteed Turn-Off Time Selections of 100 usee Available

Complementary Diodes and Mounting Hardware Available

DV/DT

with Higher Selections Available

Excellent Surge and

IMPORTANT: Mounting

instructions

on the

last

page of the C501 specification must be followed.

MAXIMUM ALLOWABLE RATINGS

TYPE

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK OFF-STATE

AND REVERSE VOLTAGE

v drm/ v rrm 2

AND REVERSE VOLTAGE

v drm/ v rrm 2

Tj =

C502PE
C502PM
C502PS
C502PN
C502PT
C502L
C502LA
Half Sine

-40Cto+125C

Tj =

500 Volts
1600
1700
1800
1900
2000

1 600 Volts
1700
1800
1900
2000
2100

2100

2200

Wave Waveform, 10 msec maximum

2
l

TSM
Anode Current Switching from 1000

>

(for fusing) (for times

(for fusing) (at 8.3 milliseconds)

(see Charts

V (Repetitive)

100 A/fisec
2
130,000 Ampere Seconds
2
265,000 Ampere Seconds

200 Watts

Peak Gate Power Dissipation, P GM

40

Average Gate Power Dissipation, Pc,(av)

Peak Reverse Gate Voltage, V GRM
Storage and Operating Temperature,

Assumes heat

dissipator less than

Watts

5 Volts

T ST g and

-40C to +125C

Tj

2000
1C/W thermal

/isec Pulse

Mounting Force Required

2

and 2)

8,000 Amperes

1.5 milliseconds) see Figure 7

2
I

1600 Volts
1700
1800
1900
2000
2100
2200

Depends on conduction angle

Peak One-Cycle Surge On-State Current,

Rate-of-Rise of

pulse width.

Average Forward Current, On-State

Maximum

0Cto+125C

TRANSIENT PEAK REVERSE

VOLTAGE, V RSM
Tj= +125C

'

resistance.

999

Lbs.

10%

C502

CHARACTERISTICS
TEST
Peak Reverse and Off-

TEST CONDITIONS

SYMBOL

MIN.

TYP.

MAX.

UNITS

!drm

1.0

15

mA

Tj = +25C,

15

35

mA

Tj =+125C,

.05

C/Watt

VDRM

VRRM

and

State Currents

!rrm
Peak Reverse and Off-

!drm

State Blocking Current

and

VDRM

V RRM

!rrm
Effective

Thermal

Resist-

R0jc

dv/dt

500

Holding Current

Ih

100

Latching Current

II

td

Critical

Exponential Rate-

of-Rise of

Junction-to-Case

Double

Side Cooling

(DC)

ance, Junction-to-Case

V//isec

Tj = +125C,

VDRM

= 0.8 x

Gate Open.

Forward Block-

ing Voltage (Higher values

may cause device switching)

supply = 24 Vdc,
forward current = 500 amps.

250

mAdc

Adc

T c = +25C, Anode supply = 24 Vdc, Load

resistance
2 ohms max.

//sec

T c = +25C, I T = 50 Adc. Gate Supply: 20V,

20 ohms, 500mA, 0.5yusec max. rise time,

T c = +25C, Anode

Initial

Delay Time

1.5

"

1000V

Gate Pulse Width

Necessary to Trigger

10

/zsec

T c = +25C. Gate
5

Gate Trigger Current, See

Figure 10 for Recommended Gate Drive Conditions

!gt

Gate Trigger Voltage

VGT

Peak On-State Voltage

VTM

60

150

275

2.0

15

50

2.5

4.5

0.3

1.53

mAdc

ohms,

Commutated

tq

125

250

Supply:

10V Open

Circuit

0.1 /usee rise time.

R L = 3 ohms
10 Vdc, R L = 3 ohms
=
=
T c +1 25C, V D 0.5 VDRM R L = 3 Ohms
T c = 0C to +125C, V D = 0.5 Vdc,
R L = 3 ohms
T c =+125C, V D = 0.5 VDRM
R L = 1000 ohms.
T c = +25C, V D =
T c = -40C, V D =

10 Vdc,

Vdc

Volts

T c = +25C, I T = 1000 amps.

Duty

Circuited

switching voltage.

/usee

Turn-Off Time

(1)

cycle

<

peak.

0.01%

T c = +125C
T = 450 Amps.
= 75 Volts min.

(2)

(3)

VR

0.5
DR m Reapphed
(5) Rate-of-rise of reapphed forward blocking voltage = 50V//usec (linear).
(4)

(6)

Commutation

di/dt

= 25 Amps/jusec.

(7) Repetition rate = 1 pps.

(8) Gate bias during turn-off interval
volts,

Suppressible Surge
Current (Half Sinewave
Peak Current, 8.3 msec

^MtSUP)

Amps

6400

(1)

Tc = 115C

(2)

VR

I
1000

(3)

= .67 RRM
.67
DR m Reapplied, 8.3
surge current zero.

(4)

Figure 12.

Pulse Width)

100 ohms.

msec

after

C502
"1

I30

50-60 Hz

180

CONDUCTION

DUTY CYCLE

DC

180

WO LE

c ON 3UC TIC N

6 3"

90

^50

II
100

500

AVERAGE ON-STATE CURRENT-AMPERES

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM DOUBLE-SIDE COOLED

1.

33

400

300

200.

100

6.7

DUTY CYCLE:

120

2.

300
400
200
AVERAGE ON- STATE CURRENT - AMPERES

500

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM DOUBLE-SIDE COOLED

10"
1

CONDUCTION ANGLE: 60

PERC EN r

UJ

I0 3

UTY CYC LE

16.7

33

180

ANGLE

AVERAGE ON-STATE CURRENT

3.

ioot

AVERAGE ON-STATE CURRENT -AMPERES

AMPERES

AVERAGE ON-STATE POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

4.

AVERAGE ON-STATE POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

COOLED

->,

COOLED

RESISTANCE

AMBIENT)
RESISTANCE

AMBIENTI

EXCHANGER

EXCHANGER

TO
DOUBLE-SIDE

TO
THERMAL
DOUBLE-SIDE

(CASE

HEAT
THERMAL

(CASE

HEAT

O bob oi
o

--i

j,

OOO

unooioiW

oiroo

oooooo

:-_:_,,

33
PFf)CFN T D JTY CYC LE
US --*e cs > 0. 305' C/
20

5.

30

40
60
70
50
AMBIENT TEMPERATURE- C

80

20

90

AVERAGE RECTANGULAR ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

O It

80 CON DUC Tior 1 AN ;le

USE H Bc s i 0.0 J5C /w

o O

/3

40
70
50
60
AMBIENT TEMPERATURE -*C

80

AVERAGE PHASE BACK ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

6.

1001

30

C502
10,000

a o 300
z
o
: o aoo

05
UJ

150

a.

r " ioo
H < 80

8,000

6,000

=
ui

Tj

4,000

"

25C

"Tj

125-C

50
30
1,000

go
ft
z>

Ui
(3
a:

800

15

io

600

5=

u
*

400

3w

UJ
a.

1
2

10

PULSE BASE WIDTH- MILLISECONDS

7.

2
I

INSTANTANEOUS ON-STATE VOLTAGE

AND

1-rsM FOLLOWING RATED

LOAD CONDITIONS

-""

12

5
-

VOLTS

MAXIMUM FORWARD CONDUCTION

8.

CHARACTERISTIC ON-STATE

NOTES:
R OJC

1.

US

Power "D" adds .01C/W to account for both case to

interfaces, when properly mounted; e.g.,
R 0JS = .06C/W. See Mounting Instructions.
DC Thermal Impedance is based on average full cycle

dissipator

a c/v

2.

junction temperature. Instantaneous junction temperature may be calculated using the following modi.01

fications:

kl

<

end of conducting portion of cycle

120 sq. wave add .0065C/W along entire curve
180 sq. wave add .0047C/W along entire curve
180 sine wave add 0026 C/W along entire curve
end of full cycle
any wave, subtract .0026C/W along entire curve
.

.001

.01

.1

I.

TIME-SECONDS

TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE (DOUBLE-SIDE COOLED)

rCXPCCTEDNAMK OFMTC (X**.. )CHA RACTERWTIC AMBL

.

5 so
>

.^i 52

*.

I-

tfi

io

S.0

^X sT

nt>5>5rt_

^40*C-

POtSISLE ^

""

- RCON OF

^C >5
~~:

^^&r^~ o

**~\fii .*

!.o-

SOURCE
LOAD LINES

M
"

1.0

1.0

1
1

Z.

4.

IRVTANTANeOU* SATE CURRENT AMPERES

10.

GATE TRIGGERING CHARACTERISTICS

1002

KM)

C502
NOTES:

l00

Code:

Non-Repetitive High Gate Drive

Repetitive High Gate Drive

1,500

Low Gate Drive

Low Gate Drive

Non-Repetitive
Repetitive

8
<

Low Gate
900

Drive

14V/35ohms

Source
Pulse Width, t
p
Current Rise Time,

1,000

> 20

20V/10 ohms

>10 Us

|Us

<2

tr

High Gate Drive

<0.5jUs

*Permissible circuit di/dt excluding snubber discharge. Repetitive di/dt is recommended maximum condition
to achieve most industrial requirements for service life. It
meets or exceeds the JEDEC test requirements for certification set forth in
Std. Sk. 516 (1972). Nonrepetitive di/dt meets the JEDEC 5 second rating.

700

600

NEMA

500

**Snubber discharge,

s , is treated separately using the minivalue of snubber resistance indicated above. This
applies for long industrial life (20 30 years) in combination with circuit di/dt.
i

mum

400,

50

11.

200

100
CIRCUIT COMMUTATING

AM

di

ALLOWABLE REPETITIVE AND NON-REPETITIVE INRUSH CURRENT (DI/DT*) AND REQUIRED SNUBBER
RESISTANCE FOR VARYING LEVELS OF SWITCHING VOLTAGE

zx
I

CURRENT

|-8.3ms

VOLTAGE

TM (SUP)

8.3ms -H

--f*-

5V DRM

V REAPPLIED

67V D

12.

SUPPRESSIBLE SURGE CURRENT TEST

OUTLINE DRAWING
TABLE OF DIMENSIONS
Conversion Table

SYM.

,
a

DECIMAL INCHES
MAX.

MIN.

B
C

0.200
0.140
16.000

1.240

r-

ANODE

.000

5.08

20.000

406.40
31.50

'

1.260
2.000
1 .060

.026

0.136
.080

25.40
0.64

MM
MAX.

NOTES

6.10

508.00
32.00
50.80
26.92

0.146
i

2.000
.036

0.240

3.56
!

* E

TERMINAL

METRIC
MIN.

3.45
2.03

0.91

3.71

50.80

NOTES:
\-<(>0
1.

TERMINAL
PLATED SURFACE

Glazed Ceramic Insulatoi With 1.00 Inch Mir

(25.40 MM)

TERMINAL
(WHITE WIRE}

TERMINAL

(RED WIRE)

1003

Surface Creepage.

C502

HEAT SINK SELECTION MADE EASY

The C502 specification sheet marks the introduction of
two new characteristic curves which should greatly facilitate

heat sink selection.

average

Figures 5 and 6 plot allowable

,.

^
current versus ambient temperature
and case-to,

(RflcA = 0.3C/W).

between the curves

180

average forward current and

maximum

known, the designer can specify a heat sink thermal

Note that the graphs span the range of heat sinks
from water-cooled (R# C a = .03C/W) to free-air convection
ture are

resistance.

1004

Rqca,

Tj =

sinusoidal current waveforms.

As soon as the
ambient tempera-

possible to linearly interpolate

is

These curves have been derived from the following basic

.

ambient thermal resistance for the two most frequently

encountered waveforms, 1/3 duty cycle rectangular current
and

It

for

where:

T A + P A vc; x R#JA

Tj = 125C

For increased reliability, the usual practice is to derate Tj

15-30 degrees. Figures 5 and 6 can perform this function

by the simple expedient of

raising

T A by

a like

amount.

High Power

Silicon

Controlled Rectifier
600A AVG., UP TO 2600 VOLTS

AMPLIFYING GATE

The C602

Series of high power SCR's feature the proven, multi-diffused

construction in a new, larger, pressure-mounted package for phase control.

FEATURES:

2600 Volt Blocking Voltage Capability

Glazed Ceramic Hermetic Package with l" Creepage Path

Reliability of Pressure Contacts plus Reversibility of the Package

Available in Factory Assembled Heat Exchangers or Ready-to-Mount

Complementary

Higher dv/dt Ratings

Rectifiers

IMPORTANT: Mounting

instructions

on the

last

page of the C501 specification must be followed.

MAXIMUM ALLOWABLE RATINGS

v drm/Vrrm'

Vdrm/Vrrm

REPETITIVE

REPETITIVE

Tj = -40C to +125C

Tj = 0C to +125C

1700 Volts
1800
1900
2000
2100
2200
2300
2400
2500

1800 Volts
1900
2000
2100
2200
2300
2400
2500
2600
2700

TYPE

C602PS

C602PN
C602PT
C602L
C602LA
C602LB
C602LC
C602LD
C602LE
C602LM

2600

TRANSIENT PEAK REVERSE

VOLTAGE (NON-RECURRENT
<5 MILLISECONDS) V RSM
Tj = -40C to +125C

1800 Volts
1900

2000
2100
2200
2300
2400
2500
2600
2700

Consult factory for higher voltage grades.

Depends on Conduction Angle

10,000 Amperes

Average Forward Current, On-State

Peak One-Cycle Surge On-State Current, I TSM

Maximum

Rate-of-Rise of

(Switching Rates
(See Curve 9
2
I

(for fusing)

<

for

Anode Current Turn-On

Interval

From < 600V, 75A/;usec

From < 1000V, 50A/jusec
Switch From < 1500V, 35A/Msec
2
415,000 Ampere Seconds
Switch

400 Hz)

Recommended Load

Switch

Line)

(at 8.3 milliseconds)

40 Watts

Peak Gate Power Dissipation, P GM

5 Watts

Average Gate Power Dissipation, P G (av)

Peak Reverse Gate Voltage, V GRM

Storage and Operating Temperatures,

5 Volts

Refer Above

T S tg and Tj

4000 Lbs. + 10%

Mounting Force Required

17.8

NOTES:
ta:
I

Ratings apply for zero gate voltage. Assumes heat dissipator thermal resistance

1005

less

than 0.5C/W.

KN

10%

C602

CHARACTERISTICS
TEST

SYMBOL

Peak Reverse and

Forward Blocking Current

!drm

MIIM.

TYP.

MAX.

UNITS

10

15

mA

Tj = +25C,

15

35

mA

Tj

.036

C/Watt

TEST CONDITIONS

and

V DRM

V RRM

!rrm
Peak Reverse and OnState Blocking Current

!drm

=+125C, V =

and

V DRM =V RRM

!rrm
Effective

Thermal

Resist-

R0jc

dv/dt

500

ance, Junction-to-Case
Critical Exponential Rateof-Rise of Forward Blocking Voltage (Higher values

may

Junction-to-Case, Double-Side Cooled (DC)

V DRM

V//usec

Tj = +125C,
Gate Open.

mAdc

T c = +25C, Anode Supply = 20 Vdc.

= .67 Rated,

cause device switching)

Holding Current

Ih

100

250

Forward Current = 500 Amps.

Initial

Latching Current

Adc

T c = +25C, Anode Voltage = 24 Vdc.

Load Resistance 12 Ohms Max.

Delay Time

td

Gate Pulse Width

Necessary to Trigger

Gate Trigger Current

!gt

Gate Trigger Voltage

VG t

1.8

/usee

Switching From 900 Volts, 20V/10J7,

Msec Rise Time

10

jusec

See Figure 9.

80

150

mAdc

5.0

15

75

2.6

4.5

T c = 25C, V D = 10 Vdc, R L =
T c = +125C, V D =
R L = 1000 Ohms

Vdc

T c = 0C

RL =
.2

Vtm

1.90

to

+125C,

Ohms

Tc = 125C, V D =

RL
Peak On-State Voltage

Volts

.5

= 1000

.5

.5

Ohms

x Rated,

VD

= 10 Vdc,

x Rated,

Ohms

T c = +125C, I T = 1000 Amps.

Peak,

Duty Cycle <0.01%

Circuit

Commutated

tq

125

250

jusec

Turn-Off Time

(1)

T c = +125C

(5)

T = 450 Amps.
= 75 Volts Min.
50% V DRM Reapplied
Rate-of-rise of Reapplied Forward

(6)

Gate Bias = Open During Turn-Off

(2)

(3)
(4)

VR

Blocking Voltage = .25V//usec. Linear

Interval

Suppressible Surge
Current

TM(SUP)

Amps

7500

(7)

Duty Cycle

(1)

T c = 115C

(2)

1006

VR

= .67

V DRM

<

0.01%

V RRM

(3)

Applied 8.3 msec. After

Completion of Surge

(4)

Figure 13.

.67

C602

140

DOUBLE SIDE
COOLING
50 TO 400 HZ

120

|0

*MLE

CONDUCTION

80
<
u
UJ
Si

60
30

i
o
J 40
X
t 20

60*

90* 120*

DC

180*

800
600
200
400
AVERAGE FORWARD CURRENT - AMPERES

200
600
400
800
AVERAGE FORWARD CURRENT AMPERES

MAXIMUM ALLOWABLE SINK TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM

MAXIMUM ALLOWABLE SINK TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM

(DOUBLE-SIDE COOLED)

(DOUBLE-SIDE COOLED)

1,000

1,000

T,

30*

/60

-I25C

/ 90 /l20"

/6 1/4%

g 8
I

/, /

/ //

700

T
IRO"

12

1/2%

800

'^"C

700

Sy/bZ

J
t

-?33l/3%

/^O'k/L

y/Qt

6o

UJ

900

600

en

5 500
<n

500

ac

UJ

400

S 400

O
a.

UJ

300

o
<
200
5

/^

300

)
[
i

k\\^>

1"

200

^5JL .(%)OUTV CYCLE

100

^l

100

CONOUCTIO M ANGLE

300
400
200
AVERAGE FORWARD CURRENT -AMPERES

500

100

AVERAGE FORWARD POWER DISSIPATION

FOR RECTANGULAR CURRENT WAVEFORM

AVERAGE FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM
2,000

2,000
/e'/

4%

l2'/2%

-T,
ij

=12 ST.

1,800

/
'

1,500

T, = 12

DC

,'"

60-

-y 30

500

300
200
400
AVERAGE FORWARD CURRENT- AMPERES

100

120 ?

1,600

1,400

1,200

/ 50 / 75%/

25

DC

'//

/
,

o
CO

1,000
ul

1,000

800

X^N

20

500

i\

lT

IC

H7-J

400

m m

600

sA

I *(>(%) DUTY CYCLE

200
2(50

3(X>

4C30

5(30

6(X)

7C)0

8C

9C)0

100

l,CH

AVERAGE FORWARD CURRENT- AMPERES

200 300 400

500 600
700 800
AVERAGE FORWARD CURRENT- AMPERES

900

EXTENDED FORWARD POWER DISSIPATION

EXTENDED FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

FOR RECTANGULAR CURRENT WAVEFORM

1007

IjDOO

C602

0OU6LE

SIDE

COOLED

PS

"'k
U.Z

-JtlJ

<<r

2.5

15

PULSE WIDTH- MILLISECONDS

SUB CYCLE SURGE AND t RATING

FOLLOWING RATED LOAD CONDITIONS

10

2.0

INSTANTANEOUS GATE CURRENT- AMPERES

10

15

60 HZ

FOLLOWING RATED LOAD CONDITIONS

50

2
3
4
INSTANTANEOUS FORWARD VOLTAGE

GATE TRIGGERING CHARACTERISTICS

9.

2.5

MAXIMUM ALLOWABLE SURGE CURRENT

CYCLE

10.

DROP- VOLTS

FORWARD CONDUCTION CHARACTERISTIC,

ON-STATE

ggj

OB

I+. 3*
OR 6*

T,

REFERENCE

S^

3*

END CYCLE

16.67 mS

096

'COOLEC

'Z'

07

jr

1*

SINGLE SIDE

COOLED

NOTES:

Ofi

OS
I

.045

^-^

04
OS

For 30 thermal resistance add

curve length.

.0037C/W along

entire

For 60 thermal resistance add

curve length.

.001C/W along

entire

For DC thermal resistance subtract .005C/W along entire

curve length.

0?
Ol

.0

.0 5

1.

11.

10

PO WER "ON" TIME -SE CONI>S

I0O

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE
1008

20

MIN.
IO

SNUBBER RESISTANCE
20

C602

(Ohms)
30

40

NOTES:
Code:

+++++

Non-Repetitive High Gate Drive

Repetitive High Gate Drive

Low Gate Drive

Low Gate Drive

Non-Repetitive
Repetitive

Low
Source
Pulse Width, t p
Current Rise Time,t r

Gate Drive

High Gate Drive

14V/35 0hms
>20/Js

20V/10Ohms

<2

<0.5jUs

>10|Us

Permissible circuit di/dt excluding snubber discharge (re:

PG1 0.010, p. 5). Repetitive di/dt is recommended
maximum condition to achieve most industrial requirements for service life. It meets or exceeds the JEDEC test
Std., Sk.
requirements for certification set forth in
516 (1972). Non-repetitive di/dt meets the JEDEC 5

NEMA

50

I00

CIRCUIT COMMUTATING

12.

ISO

200 A//*

second rating.

di/dl

**Snubber discharge, s is treated separately using the minimum value of snubber resistance indicated above. This
applies for long industrial life (20 - 30 years) in combii

ALLOWABLE REPETITIVE AND NONREPETITIVE IN-RUSH CURRENT (DI/DT)*

AND REQUIRED SNUBBER RESISTANCE FOR
VARYING LEVELS OF SWITCHING VOLTAGE

nation with circuit di/dt.

TM (SUP)

Z^L
|*-8.3ms

-4*- 8.3ms -

5V DRM

V REAPPLIED

67V D

13.

SUPPRESSIBLE SURGE CURRENT

OUTLINE DRAWING
METR IC

DECII* /IAL

SYM

INCH tES
MIN.
MAX.

.240

.260

.110

.130

.245

.186

.191

.060

.075

2.500

.011

.019

55.88
2.794

.030

.130

.762

L.

.056

.060

1.422

1.000

1.065

.030

.096

.130

150

1.300

1.345

25.40
.762
3.302
33.02

1009

4.851

1.905

63.50
3.483
3.302
1.524

27.05
2.438
3.810
34.16
54.61

2.150

.067

.083

1.702

T
U

12.200

12.360
.153

309.9
3.480

.137

6.604
3.302

27.051

1.065

MAX.

36.32

2.200

STRAIGHT LEAD

6.096
2.794
6.223
4.724
1.524

1.430

T= LENGTH OF

M.M
MIN.

2.11

313.9

3.886

High Speed

C612

Silicon

Controlled Rectifier
2000 Volts

1150 Amps

RMS
AMPLIFYING GATE

The General

Electric device type C612 is a new pressure mounted, high

designed for power switching at high voltage and high frequen-

SCR

current

cies (up to 5 KHz). The C612 gate structure has an involute, interdigitated
pattern to optimize the turn-on area for high di/dt capability and it is processed using a newly developed multi-diffusion technology.

FEATURES:

Off-State and Reverse Blocking Capabilities to 2000 Volts.

Very Low Switching Losses at High Frequencies.

60

/xsec

Maximum

Turn-Off Time

at

Severe Operating Conditions with

Feedback Diode,

diode.

Involute, Interdigitated Gate for High di/dt Capability.

Narrow Pulse Capability

l" Creepage-Path, Glazed-Ceramic Package.

IMPORTANT: Mounting

for

instructions

PWM
on

last

Commutating

Inverter

SCR

Socket.

page of this specification sheet must be followed.

MAXIMUM ALLOWABLE RATINGS

v drm/v rrm

TYPE

v drm/ v rrm

'

REPETITIVE
Tj = -40C to +125C

REPETITIVE
Tj = 0C to +125C

2000 Volts
1900
1800
1700
1600
1500

2100 Volts
2000
1900
1800
1700
1600

C612L
C612PT
C612PN
C612PS
C612PM
C612PE

TRANSIENT PEAK REVERSE

VOLTAGE V RSM
1

Tj = -40C to +125C

2100 Volts
2000
1900
1800
1700
1600

Peak One-Cycle Surge On-State Current,

Maximum

Repetitive Rate-of-Rise
2
I

(for fusing)

I TSM
(8.3 msec)
Anode Current Turn-On Interval 2
of Anode Current

Rate-of-Rise of

(at 1.5 milliseconds)

9000 Amperes
Switching from 1200 Volts, 500 A/fisec

200

A/jUsec

155,000 Ampere 2 Seconds

100 Watts

(See Figure 9)

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pg(av)
Peak Reverse Gate Voltage, V GRM

5 Watts

20 Volts

Storage and Operating Temperature, T stg and T,

Mounting Force Required

-40C to +125C

- 4200 Lbs.
15.6 -18.7Kn

3500

NOTES:
1

10 msec voltage sinewave.

2 di/dt rating established in

20 ohms gate

accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
with 0.5 ms short circuit trigger current rise time.

trigger source

1010

VpRM!

20

volts,

C612

CHARACTERISTICS
SYMBOL

TEST

MIN.

Idrm

Peak Off-State and

TEST CONDITIONS

TYP.

MAX.

UNITS

10

15

mA

Tj=+25 C,V = V DRM =V RRM

45

60

mA

Tj=+125 C,V = V drm

.045

and

Reverse Currents

Irrm
Idrm

Peak Off-State and

=V RR m

and

Reverse Currents

Irrm
Effective

Thermal

Resist-

DC

dv/dt

200

td

C/watt

Double-Side Cooled

ance Junction-to-Case, R#jc

Critical Linear Rate-of-Rise

V//usec

of Forward Blocking Voltage (Higher values may

cause device switching)

Delay Time

1.5

/usee

3.0

Tj = +125C,
Gate Open 1

V DRM

= .80 Rated,

Switching from 900 Volts, 20 Volt, 10

/isec Rise Time, Tj = 25C

Ohm

Gate 0.5
Gate Pulse Width

10

/usee

120

150

mAdc

5.0

30

See Figure

7.

Necessary to Trigger

Gate Trigger Current

!gt

(See Figurell)

T c = 25C, V D =
T c = +125C,
1

V GT

Gate Trigger Voltage

(See Figurell)

V TM

Peak On-State

tq

Ohms

x Rated,

RL

RL

= 3

Ohms

3.0

4.5

.3

2.21

Volts

T c = +125C, I T = 2000 Amps. Peak

Duty Cycle <0.01%

50

55

jusec

(1)

T c =+125C

(2)

(3)

VR >

Vdc

T c = 25C, V D =
T c = 125C, V D =
1000 Ohms

(5)

(6)

*q

.5

= 3

000 Ohms

(4)

Conventional Circuit Commutated Turn-Off Time

(With Feedback Diode)

RL

Voltage

Conventional Circuit Cornmutated Turn-Off Time

(With Reverse Voltage)

VD

10 Vdc,

55

60

jusec

80%V DRM

RL

reapplied 1

Forward Blocking Voltage = 200 V/Aisec.

Gate Bias = Open During Turn-Off
Interval =
Volts, 100 Ohms

<

(1)

T c =+125C

(2)

It = 50

(3)

VR

(6)

x Rated,

Rate-of-rise of

Duty Cycle

(5)

.5

T = 500 Amps.
50 Volts

(7)

(4)

10 Vdc,

0.01%

Amps.

= 2 Volts Min.

80% V DRM

reapplied 1

Forward Blocking Voltage = 200 V/jusec.

Gate Bias = Open During Turn-Off
Rate-of-rise of

Interval
(7)

440

is

maximum

for

Duty Cycle

<

0.01%

C613PT and C613L.

1011

SINE

WAVE DATA
10

100

200
500
PULSE BASE WIDTH -

1000

2000

5000

O;000

100

MICROSECONDS

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 65C)

200
500
PULSE BASE WIDTH -

1000
2000
MICROSECONDS

5000

10,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)

icvooo

NOTES:

200
500
1,000
2,000
PULSE BASE WIDTH - MICROSECONDS
3.

5,000

Vq

1.

Switching voltage range:

2.

Peak snubber discharge current

15V 0.8

VrjRiy.

<50A. RC<10/isec.

20V/10 Ohms,

3.

High gate drive:

4.

Reverse voltage
50V. If no bypass diode
recovery switching losses must be added.

0.5/Usec.

<

rise
is

time.

used,

10,000

ENERGY PER PULSE FOR SINUSOIDAL

PULSES

TRAPEZOIDAL WAVEFORM DATA

8

I
50
4.

ICO

200
500
1,000
2,000
5,000
PULSE BASE WIDTH - MICROSECONDS

1,000

100

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT FOR RISING
DI/DT = 100 A/juSEC

(T c = 65C)

200
500
1,000
2,000
PULSE BASE WIDTH -MICROSECONDS

5,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT FOR RISING
1012

DI/DT = 100 A///SEC

(T c =

90C

10,000

C612
dl

/dt

"

~J~

-"-I

\
V

^ WATT- SEC/PULSE
\5.oN
l

s.

v^

"S.

\.(

100

\I.O

>

1.

Switching voltage range: Vrj =

2.

Peak snubber discharge current

3.

High gate drive:

4.

Reverse voltage

15V

< 50A.

20V/10 Ohms,

0.8

RC

0.5/Jsec.

VqrM-

<10;Usec.
rise

time.

^ 50V.

NyO.5

0.2

O.I

50

NOTES:

200
500
PULSE BASE WIDTH

5,000

2,000

1,000
-

10,000

MICROSECONDS

ENERGY PER PULSE FOR TRAPEZOIDAL

CURRENT WAVEFORMS FOR
100 A//iSEC RISING DI/DT

LOW FREQUENCY DATA

I0P00

VOLTAGE

NOTES:
5,000

C6I2 MAX

I-

,ooo

I25C

500

100
p

o,

MAXIMUM ON -STATE VOLTAGE

VOLTS

FORWARD CONDUCTION

7.

(Volts)

CURRENT

CHARACTERISTIC ON-STATE

2000
3000
4000
5000
6000
7000
8000
9000
10000

7.000
I

(/

100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500

1.040
1.153
1.232
1.300
1.363
1.422
1.480
1.537
1.594
1.650
1.706
1.762
1.818
1.873
1.929
2.210
2.781
3.363
3.954
4.552
5.157
5.767
6.382

10,000

POO
I-,.

Mir
a.

500

5jOOO|

3
o
o

MA X
200

2,000

Or
Mir

00

^T*^

'

NOTES:

1,000

Curves are based upon production tests of

close approximation based

i.> IOOOA

50 X

priate value of

Ir/dt

rec

upon

rec
r is a
calculation using approl

and an emperical formula.

20

2
i

IOO

IO
10

20

50

dl r

IOO

/dt (A/usec)

REVERSE RECOVERY CHARACTERISTICS

(125C)

1013

C612

PULSE BASE WIDTH

MILLISECONDS

CO
UJ
cc

1
<
o

I.S

t-

z
UJ
a
cr

o
uj

10

a:

1.

1.

PULSE BASE WIDTH

it
n

I+, 3+
OR 6*

.07

l6.67mS
CYJ.

/~l*

REFERENCE -3*

END CYCLE

t1

2
t RATING
FOLLOWING RATED LOAD

CONDITIONS

Tj

MILLISECONDS

SUB-CYCLE SURGE AND

9.

(W

'\

SINGLE SIDE

(Sinusoidal

Waveform)

.096
i

COOLEC

/^J* SINGLE

SIDE

LE

NOTES:

.06

For 30 thermal resistance add .0037C/W along entire

curve length.

.045
1*

.04

For 60 thermal resistance add

curve length.

DOUBLE SIDE COOLED

.001C/W along

entire

For DC thermal resistance subtract .005C/W along entire

curve length.
.02

I
.01

.02

.05

.1

1.0

POWER

"ON" TIME -

10

SECONDS

10.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE
1014

C612
!

I
I

I
I

HIGHEST TRANSIENT GATE

sn

CURRENT APPLIED.
LOADLINE 20V/IOA

V" v-fa

NOTES:
Maximum
1.

git?
LOA 3LINE

3on

\\

>*

k
*^k

2.

3.

-40

I25C

Loadlines

12,

20V/10

12 and similar are recom-

mended

TR GGER POINTS

application: rise time ^0.5/Jsec;

> 10/isec.

Loadline 15V/30 12

usable gate drive.

4.

minimum

as

is

gate

the

drives for

Tp
minimum

most inverter

>

30 12 when turning on
Snubber resistances must be
from
800V bias. Delay-time may be increased, di/dt

25%

rating

.2

30V/15

LO CUS OF
PO SSIBLE DC-

LOWEST DC-GATE
VOLTAGE AT -40C
0

allowable gate dissipation = 3 watts.

locus of possible DC-trigger points lies outside the

boundaries shown at various junction temperatures.

The

.3

.4

.5

2.0

I.O

INSTANTANEOUS GATE CURRENT

11.

3.0

4.0 5.0

^
< 100A//isec.

I0.0

AMPERES

MAXIMUM ALLOWABLE PEAK GATE POWER

VS.

GATE PULSE WIDTH

OUTLINE DRAWING

SYM

DECirl/IAL
INCt <ES
MIN.
MAX.

.240

.260

.110

.130

.245

.186

.191

.060

.075

M.N
MIN.
6.096
2.794
6.223
4.724
1.524

G
H

2.200

.011

1.065
2.500
.019

.030

.130

55.88
2.794
.762

1.422

.056

.060

1.000

1.065

.030

.096

.762

.130

.150

1.300

1.345
2.150

3.302
33.02

.067

12.200

.083
2.360

.137

R
1

.153

MAX.
6.604
3.302
4.851

1.905

36.32
27.051

1.430

T= LENGTH OF

METR IC

25.40

63.50

3.483
3.302
1.524
27.05
2.438
3.810
34.16
54.61

1.702

309.9

3.480

2.11

313.9

3.886

STRAIGHT LEAD

C600 SERIES SUGGESTED

MOUNTING METHODS

Rf*r to C702 specification for mounting instructions

1015

High Speed

Silicon

C613

Controlled Rectifier

2000 Volts 750 Amps RMS

AMPLIFYING GATE

The General
currerft

Electric device type C613 is a new pressure-mounted, high

designed for power switching at high voltage and high frequen-

SCR

cies (up to 5 KHz). The C613 gate structure has an involute, interdigitated
pattern to optimize the turn-on area for high di/dt capability and it is processed using a newly developed multi-diffusion technology.

FEATURES:

Off-State and Reverse Blocking Capabilities to

Low Switching Losses at High

50 /xsec Maximum Turn-Off Time

Very

2000

Volts.

Frequencies.
at

Severe Operating Conditions with Bypass

diode.

Involute, Interdigitated Gate for High di/dt Capability.

Narrow

PWM

Pulse Capability for

Inverter
1" Creepage-Path, Glazed-Ceramic Package.

IMPORTANT: Mounting

instructions

on

page of

last

Commutating SCR Socket.

this specification sheet

must be followed.

MAXIMUM ALLOWABLE RATINGS

Vdrm'Vrrm
TYPE

Vdrm/Vrrm

REPETITIVE

TRANSIENT PEAK REVERSE

VOLTAGE *, Vrsm

Tj = -40C to +125C

REPETITIVE
C
Tj =
C to +125C

Tj = -40C to +125C

2000 Volts
1900
1800
1700
1600
1500

2100 Volts
2000
1900
1800
1700
1600

2100 Volts
2000
1900
1800
1700
1600

C613L
C613PT
C613PN
C613PS
C613PM
C613PE

Consult factory for lower rated voltage devices.

Peak One-Cycle Surge On-State Current, I TSM (8.3 msec)

Maximum Rate-of-Rise of Anode Current Turn-On Interval2
Repetitive Rate-of-Rise of
2
I

(for fusing)

6,500 Amperes
Switching from 1200 Volts, 500 A//isec

Anode Current

(at 1.5 milliseconds)

Switching from 1200 Volts, 200 A/jusec

2
80,000 Ampere Seconds

(See Figure 9)

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)
Peak Reverse" Gate Voltage,

50 Watts
5 Watts

V GRM

20 Volts

Storage and Operating Temperature, Tstg and Tj

Mounting Force Required

Refer Above

- 4200 Lbs.
15.6 - 18.7 KN

3500

I
NOTES:
1

10 msec voltage sinewave.

2 di/dt rating established in

a 0.2

/if,

20

ohm

snubber

accordance with
circuit in parallel

EIA-NEMA
with the

Standard RS-397, Section 5.2.2.6. This di/dt

DUT.

This

is

1016

a non-repetitive rating.

is

in

addition to the discharge of

s!

C613

CHARACTERISTICS
SYMBOL

TEST
Peak Off-State and

Idrm

Reverse Currents

and

MIN.

TEST CONDITIONS

TYP.

MAX.

UNITS

10

15

mA

Tj = +25C,

45

60

mA

T, = +125C,

.04

C/Watt

Double-Side Cooled (DC)

V//isec

Tj = +125C,
Gate Open 1

VDRM

VRRM

Irrm
Peak Off-State and

Idrm

Reverse Currents

and

VDRM = VRRM

Irrm
Effective

Thermal

Resist-

R0jc

dv/dt

400

td

1.6

3.0

/jsec

Switching from 900 Volts, 20 Volt, 10

Gate 0.5 Msec Rise Time, Tj = 25C

10

/isec

See Figure 11.

120

180

mAdc

5.0

30

ance Junction-to-Case
Critical Linear Rate-of-Rise

of Forward Blocking Voltage (Higher values may

cause device switching)

Delay Time

Gate Pulse Width

Necessary to Trigger

Gate Trigger Current

Igt

vGT

Peak On-State Voltage

Vtm

3.5

5.0

T c = +125C, V D =

.3

2.9

Vdc

Volts

= 1000

tq

40

jusec

.5

Ohm

Ohms

x Rated,

Ohms

T c = 25C, V D = 10 Vdc, R L =
T c = 125C, V D = .5 x Rated,
R L = 1000 Ohms

Ohms

T c = +125C, I T = 2000 Amps. Peak

Duty Cycle

Conventional Circuit Commutated Turn-Off Time

(With Reverse Voltage)

= .80 Rated

T c = 25C, V D = OVdc, R L =

RL
Gate Trigger Voltage

V DRM

(1)
(2)

<

0.01%

T c = +125C
I

T = 500 Amps.

(4)

V R > 50 Volts
80% V DRM Reapplied

(5)

Rate-of-rise of

(3)

Forward Blocking Volt-

age = 400 V/jUsec.

Gate Bias = Open During Turn-Off

Interval =
Volts, 100 Ohms
(7) Duty Cycle < 0.01%
(6)

Conventional Circuit Commutated Turn-Off Time

(With Feedback Diode)

tq

45

50

/i sec

(1)

T c = +125C

T = 500 Amps.
= 2 Volts Min.
:
(4) 80% V DRM Reapplied
(5) Rate-of-rise of Forward Blocking Volt-

(2)

(3)

VR

age = 400 V/^sec.

(6) Gate Bias
Interval
(7)
l

440

is

maximum

for

= Open During Turn-Off

Duty Cycle

<

0.01%

C613PT and C613L.

1017

100

500
ipoo
PULSE BASE WIDTH-MICROSECONDS

5,000

lopoo

500

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

1.

1,000

PULSE BASE WIDTH -MICROSECONDS

5,000

10,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)

2.

NOTES:
1.

2.
3.

4.

100

500

1,000

Switching voltage range:

Vp

5V

0.8

Peak snubber discharge current <50A. RC

High gate drive: 20V/10 Ohms, 0.5/Jsec

Vqrm-

<10/&ec
time.

rise

<

Reverse voltage
50V. If no bypass diode
reverse recovery losses must be added.

is

used,

5,000 10,000

PULSE BASE WIDTH -MICROSECONDS

3.

ENERGY PER PULSE FOR SINUSOIDAL

PULSES

10,000

9,000
8,000

5,000

4,000

uj

2,000

7,000

6,000

<

*
S

1,000

900
800
700
600
500

100

500
1,000
PULSE BASE WIDTH- MICROSECONDS

5,000 10,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT FOR RISING
DI/DT = 100 A/mSEC.

(T c = 65C)

500

1,000

5,000

PULSE BASE WIDTH- MICROSECONDS

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT FOR RISING
1018

DI/DT = 100A//USEC. (T c = 90C)

10,000

C613
10,000
~

8,000

WITH

_. _
IIY

MASS DIODE

It

6,000

lOOA/^ut

It

UJ

u
Q.
2
<

4,000
-

wat r - sec PER PULSE

^.jo

2,000

"N

s5

NOTES:
Vrj =

1.

Switching voltage range:

2.

Peak snubber discharge current

**

1,000

N,

800
600

~5

>

>*_

si

'n.

3.

High gate drive:

4.

Reverse voltage

400

15V -

0.8

V&RM-

< 50A. RC <10/isec.

20V/10 Ohms,

0.5/isec rise time.

^ 50V.

200
\

.1

100

00

50

PULSE

.5

.2

000
BASE WIDTH- MICROSECONOS
5(X)

1,

5,000

i6,0<

ENERGY PER PULSE FOR TRAPEZOIDAL

CURRENT WAVEFORMS FOR
100A//XSEC. RISING DI/DT
10,000,

VOLTAGE

NOTES:

FORWARD CONDUCTION CHARACTERISTICS

(Volts)

CURRENT

(Amps)

1.145
1.300
1.423
1.533
1.634

100
200
300
400
500

1.731

600

1.824
1.914
2.002
2.089
2.174
2.257
2.340
2.422
2.503
2.900
3.665
4.410
5.142
5.865

800
900
1000
1100
1200
1300
1400
1500
2000
3000
4000
5000
6000

700

ON-STATE
RECOVERY CURRENT AND CHARGE
i

(5) T) -

125 C

10,000

1,000

5,000!

500

2ft

I o
2,000

150

(/)

200

300

m 8 200

"S

100

80
60

</>

1,000

100

20

Soo
500

'5

<r
a:

10

*
D UJ

01

in

it!

50

100

dl r /dt
8.

3*
2

200

PULSE BASE WIDTH MILLISECONDS

(A//i.sec)

RECOVERED CHARGE

a.

SUB-CYCLE SURGE AND

t RATING
FOLLOWING RATED LOAD

(125C)

CONDITIONS
1019

(Sinusoidal

Waveform)

C613

REFERENCE -6+
REFERENCE -3*
Tj REFERENCE - 14
END CYCLE
Tj

it
OR

3+
OR 6*
i+,

.07

Pi

09fi

/ :CATH0D"E"6n"s"iNK)

f^i

16.67m S

^1* SINGLE
mm prSIDE

Tj

.09

,085

SINGLE SIDE

COOLED

NOTES:

.06

For 3</> thermal resistance add

curve length.

*
\ OS
.045

For 60 thermal
curve length.

resistance add

.0037C/W along

entire

.001C/W along

entire

For DC thermal resistance subtract .005C/W along entire

curve length.

.03

.02

.01

.C

.0 5

1.

100

l(3

IOC

PO WER "ON TIME -SE CON 3S

10.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

40.0
1

HIGHEST TRANSIENT GATE

30.0

LOADLINE 30V/I5J1

C URRENT AP LI

^LOADLINE 20V/I0A

i2-

NOTES:
1.
Maximum

LOA )LINE

.J5W 3on

\\
5.0

rv

TRIGGER POINTS

20V/102 and similar

minimum gate drives for most

Loadlines 30V/15S2,

are rec-

ommended

inverter

3.

IBLE DC-

allowable gate dissipation = 3 watts.

The locus of possible DC-trigger points lies outside the

boundaries shown at various junction temperatures.

sL

S OF

L
P

-40 C

2.

as

application; rise time

4.0

LOWEST DC-GATE
VOLTAGE AT -40C

3.0

0*

125-C 25-C

2.0

-^-

<*""

Loadline

4.

15V/30

<0.5/ec;T p >10/isec.
is

the

minimum

usable gate drive.

>

Snubber resistances must be

30 1 when turning on
from ^800V bias. Delay-time may be increased, di/dt

rating

<100A/jUsec

.4

.5

2.0

I.O

INSTANTANEOUS GATE CURRENT

11.

3.0

4.0 5j0

AMPERES

MAXIMUM ALLOWABLE PEAK GATE POWER

VS.

GATE PULSE WIDTH

OUTLINE DRAWING
SYM

DECI MAL
INC HES
MIN.
MAX.

I
STRAIGHT LEAD

1020

MAX.

.260

6.096

6.604

.110

.130

3.302

.245

.186

.191

2.794
6.223
4.724

.060

.075

1.524

1.430

2.200

2.500

.011

.030

.019
.130

.056
1.000

1.065

.030

.096

.130

150

1.300

.060

1.345

4.851

1.905

36.32
27.051

1.065

T= LENGTH OF

1.

.240

llAUX

MA
MIN.

ZCATHODE r

METFIIC

55.88
2.794
.762
1.422
25.40
.762

3.302
33.02

2.150

63.50
3.483
3.302
1.524
27.05

2.438
3.810
34.16
54.61

.067

.083

1.702

12.200

12.360

.137

.153

309.9
3.480

2.11

313.9

3.886

C613

C613

ASSEMBLY OF PRESSPAKS TO HEAT DISSIPATORS

The following

instruction

stable thermal

and

is

essential for maintaining low,

electrical resistances associated

3.

with the

Presspak to heat dissipator surfaces.

1.

2.

some minor nicks and scratches

(Recommended mount-

4.

if careful

dissipators, bare surfaces

bare

may

attention to cleaning and treating

MOUNTING

be

NOTES:

is as-

Silicone oil SF1154, 200 centistoke,

G623, and yellow compound G322L

sured. Plated surfaces and Presspaks should be lightly

sanded with 600

plied

grit

paper, then oil or

vigorously

abraided

with

fine

"Scotchbrite" coated with Alcoa

Alcoa

compound

#2

compound

clear silicone grease

are products of the

General Electric Company; compound Alcoa #2 is a product of Aluminum Company of America; and LS2037 black
compound is product of Arco Company, 7301 Bessemer
Avenue, Cleveland, Ohio.

ap-

recommended. Unplated surfaces should be

as

pre-

top and bottom of the Presspak are for locating.

Although plated surfaces are recommended for alumi-

and copper heat

bare copper

evenly distributed over the full area. Center holes on

SURFACE DEOXIDATION AND CLEANING

used

Assemble with specified mounting force applied through

a self-leveling swivel connection. The force has to be

based upon these requirements.)

num

use G322L or LS2037*;

aluminum use Alcoa #2 or G322L;
tin-plated copper or aluminum use SF1154
ferably, or G623 or G322L;
nickel-plated aluminum use SF1 154 or G623;
silver-plating is not recommended.

also associated with test fixtures.

is

of grease or compound

tribute the applied agent.

Check each mating surface for nicks, scratches, flames

and surface finish. The Presspak surface has a total indicator reading TIR < .0005 inch and surface "-^ finish
prior to factory electrical test in pressure fixtures. The
dissipator surface should be equally as good. The TIR of
a fully tested Presspak may run higher but not exceed

ing force

silicone oil or thin layer

as indicated below. Rotate the Presspak to properly dis-

INSPECTION OF MATING SURFACES

.001 inch not including

FINAL SURFACE TREATMENT

Apply

wire brush or 3M
#2 compound. The

should be removed and the recommended

applied.

(J)

Limit maximum joint temperature to 95C, except for those

prepared with SF1154 or G322L, which are limited to
150C.

1021

HIGH SPEED

C648

Silicon Controlled Rectifier

1200 Volts

1150 A

RMS
AMPLIFYING GATE

The General

Electric C648 Silicon Controlled Rectifier is designed for power

switching at high frequencies. This is an all-diffused Press-Pak device employing the field-proven interdigitated amplifying gate system.

FEATURES:

Interdigitated

gate

structure

to

maximize high frequency current switching

capability.

Fully characterized for operation in inverter applications.

High di/dt

High dv/dt capability with selections available.

Guaranteed maximum turn-off time with selections

Rugged hermetic glazed ceramic package having l" creepage path.

ratings.

available.

2400

UJ
o:

Ui

2200

a.

2000

ISCt in/\

50% DUTY CYCLE

180"

CONDUCTION

V sw = 800V,
V R < 50V

1800

TCASE

Z5fiF

5ft,

65C

1600

1400

50

100

1000

FREQUENCY

Equipment designers can use the C648

Choppers

SCR

10000

- Hz

in

demanding applications, such

Sonar Transmitters

as:

Cycloconverters

Inverters

Induction Heaters

Dc

Regulated Power Supplied

Ratio Transmitters

High Frequency

to

DC

FOR SINE WAVE OPERATION

Like the Types C358, C385, C388,

C395 and C398,

Peak Current

Pulse Width

the

C648 SCR

Frequency

Case Temperature

vs.

1022

is

rated for:

Converters

C648

MAXIMUM ALLOWABLE RATINGS

TYPES

REPETITIVE PEAK
OFF-STATE VOLTAGE
V D RM (1)

REPETITIVE PEAK
REVERSE VOLTAGE

NON-REPETITIVE PEAK

VRRM (1)

VRSM (1)

Tj = -40C to +125C

Tj = -40C to +125C

Tj = +125C

500 Volts
600
700
800
900
1000
1100
1200

500 Volts
600
700
800
900
1000
1100
1200

600 Volts
720
840
960
1080
1200
1300
1400

C648E

C648M
C648S

C648N
C648T
C648P

C648PA
C648PB
1

Half sine wave waveform, 10

ms max.

pulse width.

Peak One Cycle Surge (Non-Repetitive) On-State Current,

2
I

(for fusing) for times

(for fusing) for times

2
I

Critical Rate-of-Rise

>
>

REVERSE VOLTAGE

10,000 Amperes

TSM

(RMS Ampere) 2 Seconds

2
415,000 (RMS Ampere) Seconds
190,000

1.5 milliseconds

8.3 milliseconds

800 A/ (is
500 A/(is

of On-State Current, Non-Repetitivet

Critical Rate-of-Rise of On-State Current, Repetitivef

2 Watts

Average Gate Power Dissipation, Pq(av)

Storage Temperature, T stg

4 0C to +150C
-40 C to +125 C

Operating Temperature, Tj

3000 Lb. + 500 Lb.

Mounting Force Required

13.3

KN

fdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated
20 ohms gate trigger source with 0.5ms short circuit trigger current rise time.

Lb.

2.2KN-0KN
Vqrm;

20 volts,

1023

C648

CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current

SYMBOL

MIN.

TYP.

MAX.

UNITS

Irrm

25

mA

Tj = +25C,

20

45

mA

Tj = +125C,

R0jc

0.04

C/Watt

Junction-to-Case

dv/dt

400

500

V/jusec

Tj = +125C, Gate Open. 80% of VDRM

Reapplied, linear or exponential rising

TEST CONDITION

V DRM

V RRM

and

Idrm
Repetitive Peak Reverse
and Off-State Current

Irrm

V DRM

VRRM

and

Idrm
Thermal Resistance
Critical Rate-of-Rise

of

Off-State Voltage (Higher

values

may

cause device

Double-Side Cooled

curved form.

switching.)

" 8

Exponential dv/dt Higher

DC

Gate Trigger

Igt

Current

DC

V GT

Gate Trigger

minimum

V RM

(.632)

dv/dt selections available - consult factory.

150

mAdc

T, =

+25C,

350

Tj =

-40C,

100

Tj = +125C,

Vdc

VD
VD
VD

= 6 Vdc,
= 6 Vdc,
= 6 Vdc,

VD

Tj = 25C to +125C,

RL
RL
RL

= 3 ohms.
= 3 ohms.
= 3 ohms.

= 6 Vdc,

RL

3 ohms.

Tj = -40C to 25C,

VD

= 6 Vdc,

RL

3 ohms.

Peak On-State Voltage

Vtm

.15

Tj = 125C,

1.95

Volts

V DRM R L

= 1000 ohms.

Tj = +25C, I TM = 2000
Cycle
.01%.

Amps

peak.

Duty

<

Conventional Circuit

40

=+125C
m = 500 Amps.

(1)

Tj

Commutated Turn-Off
Time (with Reverse

(2)

IT

(3)

VR

Voltage)

(4)

80%

*q

jusec

(5)

= 50 Volts Min.
of V DRM Reapplied.
Rate-of-Rise of Reapplied Off-State

(6)

Voltage = 400 V/yusec (linear).

Commutation di/dt = 25 Amps//usec.

(8)

Repetition Rate = 1 pps.

Gate Bias During Turn-Off Interval =

(1)

Tj = +125C

(7)

100 Ohms.

Volts,

Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)

tq(diode)T

40

jusec

(3)

I T m=
VR =

(4)

80%

(5)

Rate-of-Rise of Reapplied Off-State

(2)

500 Amps.
1.5 Volts

of

V DRM

Reapplied.

Voltage = 400V//usec (linear).

Commutation

(7)

Repetition Rate =

(8)

Gate Bias During Turn-Off Interval =

Volts,

f Consult factory for

maximum

turn-off time.

I
1024

= 25 Amps/Msec.

(6)

di/dt

100 Ohms.

pps.

WAVE CURRENT RATING DATA

SINE
10000

-* h^

C648

^iT
V^-9
k*>

<-*

*"'0
C

f?

"*v s

T'V

ssL

-?,Vo

=oc

1000

V sw

= 800V,
V R < 50V

TcASE

10

I5JI,

.25/iF

65(

1000

100

I0000

PULSE BASE WIDTH- M S

1.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65 C)

I0000
*>t

\&Sr

<o

^A

QC

UJ
Q.

fe

<
Z
UJ
tc
cc

^o **

iooo

, )

'0

tf

3>L

'Oo r"*n

s
z

V sw = 800V, I5fl,
V R < 50V
TCASE ' 90* C

<
UJ
a.

.25/1 ^

I00

IOOO

100

PULSE BASE WIDTH -^S

2.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (Tc = 90C)

10000

NOTES:
(Pertaining to Sine

IOOO

and Trapezoidal Wave Current Ratings)

< 50

2.

Reverse voltage

3.

R-C snubber

4.

Energy per pulse graph includes reverse recovery losses

but no blocking power. Blocking power on an energy
per pulse basis is approximately:

volts.

current, 1512, .25Mf-

WS/P = (RMS Value

of Blocking Voltage)

Maximum

Leakage Current
Frequency

This energy should be added to values from curves.

100

IOOO

100

PULSE BASE WIDTH -pS

3.

ENERGY PER PULSE FOR SINUSOIDAL PULSES

1025

TRAPEZOIDAL WAVE CURRENT RATING DATA

C648
10000 r

1000-

+di/dt

I00A//1S, -di/dt

IOOA/juS

V sw = 800V, I5fl, .25/iF_

V < 50V
TCASE * 65 c
100 L

100

1000

10000

PULSE BASE WIDTH-/1S

4.

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 65C)

1000-

+di/dt

lOOA/jiS, -di/dt

IOOA/^iS

V sw =800V, I5Q, .25/iF

V R < 50V

TCASE
IOOL

100

90C

=
I

1000

1000c

PULSE BASE WIDTH- M S

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH (T c = 90C)
10000

Includes reverse recovery losses but no blocking power.

Blocking power on an energy per pulse basis is approximately:

WS/P

1000

(RMS Value of Blocking Voltage)

Maximum Leakage Current
Frequency

This energy should be added to values from curves.

100

1000

10000

PULSE BASE WIDTH-/1S

ENERGY PER PULSE

AND PULSE WIDTH

VS.

PEAK CURRENT

(di/dt

1026

= 10U A/^SEC)


C648
10000

tttH
1000

tttl

l.

12

100
3

DOUBLE SIDED COOLING

.01

lllllll

II

100

0.1

TIME-SECONDS

INSTANTANEOUS ON-STATE VOLTAGE

7.

|Tj=25C

Tj=I25C/

MAXIMUM ON-STATE CHARACTERISTICS

8.

TRANSIENT THERMAL IMPEDANCE

JUNCTION-TO-CASE

5000

,000

<n

o 800
o
y fiOO

UJ

400

CO
a.

2 200
<

1000

150

O
8

100

**

fiO

^UJ

80

S<UJ
*i-q:

40

cz

3
0<
20

iii

100

IS

i>

25

'\

PULSE BASE WIDTH

9.

!S

ioo

I000

REVERSE

mSEC

SUB-CYCLE SURGE (NON-REPETITIVE)

ON-STATE CURRENT AND 2 t RATING

10.

di/dt (A/>iS)

TYPICAL RECOVERED CHARGE (125C)

SINEWAVE CURRENT WAVEFORM

NOTES:
1.

2.

3.

locus of possible dc trigger points lies outside the

boundaries shown at various case temperatures.
T p = rectangular gate current pulse width.
20V-20f2 is the minimum gate source loadline when
100 Amp//us. Maximum
rate of circuit current rise
long-term repetitive anode di/dt = 500 Amp/Ms with

The

>

20V-20I2 gate source.

I
O.I

.2

.5

I.O

INSTANTANEOUS GATE CURRENT- AMPERES

11.

GATE TRIGGER CHARACTERISTICS

AND POWER RATINGS
1027

C648
OUTLINE DRAWING

METRIC

DECIMAL
INCHES
MAX.
MIN.
.260

6.096

MAX.
6.604

.110

130

2.794

3.302

.245

.186

.191

.060

.075

MIN.

6223
4 724

G
H

2.200

.011

.030

1.065

27051
63.50

.019

2.794

130

.762

.056

060

1.000

1.065

3.483

3.302

.030

.096

.130

.150

1.300

27.05

.762

302

345 33.02

T
U

.137

438

3.810

34.16

2.150

.067
12200

1.524

1.422

25.40

1.905

3632

2.500 55.88

4.851

1.524

1.430

T= LENGTH OF

M.M.

.240

SYM
A

54.61

1.702 2.110
12.360 309 9
313.9

.083

3.480

153

886

STRAIGHT LEAD

SUGGESTED MOUNTING METHODS FOR PRESS-PAKS TO HEAT DISSIPATORS

When the Press-Pak is assembled to a heat sink in accordance with the following general instructions, a reliable and
low thermal interface will result.
1

3.

(GE G322L

is

will

that the heat dissipator

or

Dow

with 600

off and

viscosity)

Corning

adversely

affect

the

DC

paper just prior

grit

apply

silicon

oil

(GE

or silicone grease
3, 4,

340 or 640).

a thin film.

(A thick film
and thermal

electrical

resistances.)

of 63 micro-inches.

recommended

lightly

Clean

Clean off and apply again as

4.
2. It

assembly.

SF1154, 200 centistoke

Check each mating surface for nicks, scratches, flatness

and surface finish. The heat dissipator mating surface
should be flat within .0005 inch/inches and have a surface finish

Sand each surface

to

mounting

surfaces be plated with nickel, tin, or silver. Bare alumior copper surfaces will oxidize in time resulting in

num

excessively high thermal resistance.

I
1028

Assemble with the specified mounting force applied

through a self-leveling, swivel connection. The force
has to be evenly distributed over the full area. Center
holes on both top and bottom of the Press-Pak are for
locating purposes only.

High Power

Silicon

Controlled Rectifier
1250 A

Avg., up to 2000 Volts

AMPLIFYING GATE

The C701

Series of high power SCR's feature the newly developed multitechnology using 53mm diameter silicon in a new, pressuremounted package for phase control.

diffusion

FEATURES:

60C
1250 Amps. Average Single Phase Current @ T c
20,000 Amps. Surge Current
Glazed Ceramic Hermetic Package with 1" Creepage Path

Reliability of Pressure Contacts Plus Reversibility of the Package

Available in Factory Assembled Heat Exchanger or Ready-to-Mount

Complementary

Rectifiers

IMPORTANT: Mounting

instructions

on the

last

page of this specification must be followed.

MAXIMUM ALLOWABLE RATINGS

TYPE

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK OFF-STATE

AND REVERSE VOLTAGE,

AND REVERSE VOLTAGE,

v drm'v rrm'

v drm' v rrm'

TRANSIENT PEAK REVERSE

VOLTAGE (NON-RECURRENT
<5 MILLISEC), V RSM

Tj = -40C to +125C

Tj = 0C to +125C

Tj = -40C to +125C

1100 Volts
1200
1300
1400
1500
1600
1700
1800
1900
2000

1200 Volts
1300
1400
1500
1600
1700
1800
1900
2000
2100

1200 Volts
1300
1400
1500
1600
1700
1800
1900

C701PA
C701PB
C701PC
C701PD
C701PE
C701PM
C701PS

C701PN
C701PT
C701L
1

V DRM/ V RRM

ratinglpssume Presspak mounted to a heat dissipator of

less

2000
2100

than 0.3C/W.

Depends on Conduction Angle

20,000 Amperes

Average Forward Current, On-State

Peak One-Cycle Surge On-State Current,

Maximum

Rate-of-Rise of

<

(Switching Rates
2
I

(for fusing)

I TSM
Anode Current Turn-On

Interval

Switch From

60 Hz)

<1000V

1,660,000 Ampere

(at 8.3 milliseconds)

150A/jusec
2

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pg(av)
Peak Reverse Gate Voltage,
Storage Temperature,

Seconds

40 Watts

VGRM

Watts

Volts

+125 c
"40
to +125 C
5000 - 7000 Lbs.
_40

T STG

Operating Temperature, Tj

Mounting Force Required

c
C

to

22.2-

31.2

KN

NOTES:
Surge current rating

is

established in accordance with

EIA-NEMA

Standard RS-397, Paragraph 5.2.2.1.

- 20 volts, 10 ohms; maximum switching voltage - 1000 volts; short-circuit gate supply current risetime - 0.5/Jsec.
may be measured with a TEKTRONICS current probe): RC Snubber circuit used across SCR: 22 ohms, 0.5/rf.
Section 5.2.2.6.
is established in accordance with EIA-NEMA Standard RS-397,

Required trigger source

(This short-circuit current

Repetitive di/dt riling

1029

C701

CHARACTERISTICS
TEST

SYMBOL

Peak Reverse and OffState Slocking Current

MIN.

Idrm

TYP.

MAX.

UNITS

10

15

mA

Tj = +25C,

45

65

mA

Tj = +125C,

.023

C/Watt

TEST CONDITIONS

and

VDRM

VRRM

Irrm
Peak Reverse and Off-

Idrm

State Blocking Current

and

VDRM

VRRM

Irrm
Effective

Thermal

Resist-

Rfljc

ance, Junction-to-Case
Critical Linear Rate-of-

dv/dt

200

500

V//usec

Delay Time

VDRM

Tj = +125C,

Side Cooled

= .80 Rated, Gate

Gate Open.

Ih

II

1.5

Adc

T c = +25C, Anode voltage = 24 Vdc.

Load resistance 12 ohms max.

1.5

/Usee

Switching From 300 Volts. 20 volt, 1

C
Gate. 0.5 /usee Rise Time, Tj = 25 C

10

/usee

See Figure 8

60

150

mAdc

5.0

15

50

2.5

4.5

500

mAdc

T c = +25C, Anode supply = 20 Vdc.

On-State Current = 500 amps.

Initial

Latching Current

Double

(DC)

Rise of Forward Blocking Voltage (Higher values

may cause device switching)

Holding Current

Junction-to-Case

td

Gate Pulse Width

ohm

Necessary to Trigger

Gate Trigger Current

Iqt

See Figure 8

Gate Trigger Voltage

VGT

See Figure 8

Peak On-State Voltage

.3

VTM

1.70

Vdc

T c = 25C, VD = 1 Vdc, R L = 3 ohms

T c = +1 25 C, VD = .5 x Rated, R L =
1000 ohms

T c =0Cto+125C, VD =
R L = 1000 ohms
T c = +125C, VD =
1000 ohms

Volts

Tc

= -40C to

Commutated

tq

125

250

/Usee

Turn-Off Time

(1)

x Rated,

RL

+125C, I T = 3000 Amps.

Peak. Duty Cycle

Circuit

.5

10 Vdc,

<

0.01%

T c = +125C

T = 1000 Amps.
= 75 Volts min.
(4) 0.5 VDRM Reapplied
(2)

(3)

VR

(5)

Rate-of-rise of reapplied forward block-

= 50V/jusec. (linear)
Gate bias during turn-off interval,
ing voltage

(6)

Duty
Suppressible Surge

ITM(SUP)

Amps

1800

Current

cycle

<

(1)

T c = 115C'

(2)

VR

= .67

VRRM

0.01%

VDRM

Applied, 8.3 msec after

completion of surge.

(3) .67
(4)

I
1030

Figure 10.

C701

/^

20

>

JIIO

no

hoo

CONDUCTION

100

ANGLE
E
j

30

>

SO

sP C

3
|

70

I80*

S.

\400Hz

IKK

LE=3 0*
CON DUCTIC
MA XI MUM SOUf CE FF EQUE JCY=6 OHz

I20*

90* "~
200H!

60*
I00H2

\
DUTY CYCLE=I2I/Z%
MAXIMUM SOURCE FRE0UENCY = IO0Hz
500
1000
AVERAGE ON-STATE CURRENT -AMPERES

500
I000
AVERAGE ON-STATE CURRENT-AMPERES

MAXIMUM ALLOWABLE HEATSINK

TEMPERATURE FOR SINUSOIDAL
CURRENT WAVEFORM -

MAXIMUM ALLOWABLE HEATSINK

TEMPERATURE FOR RECTANGULAR
CURRENT WAVEFORM -

DOUBLE-SIDE COOLING

DOUBLE-SIDE COOLING
3000

J source frequency=c?o hz
MaX Mum
l_ conduction angle =30

hr

200

I20V^Aoohz.

"180

PHASE ANGLE

HZy

2001

HZ.

u-

m\

|I0

100 HZ

Sioo

DC

8
DC

'','

T,

"I26C

1000
IS

<
CE

MUM

PHA 3E ANC LE-I2 PH

IQUEN

6PH

ANQLE

3PH

100 Hi

200 Hi
1

1000
500
AVERAGE ON-STATE CURRENT- AMPERES

500
1000
AVERAGE ON -STATE CURRENT (AMPERES)

MAXIMUM ALLOWABLE HEATSINK

HEATSINK TEMPERATURE - CIRCUIT
PHASE CURRENT WAVEFORM DOUBLE-SIDE COOLING

4.

3000

1500

AVERAGE FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

MAXIMUM SOURCE FREQUENCY

200 HZ

60'HZ.

"

2 00 HZ
3 3 1/3%/

MAXIMUM SOURC E FREQUENCY- 100 HZ

200

iZ

25%

3 P

100 HZ.

/"WO HZ

'50%/

'

6 PH.

DC

z 2000

y^ pc
400

HZr-

"75%

I000
tj

<
IE

Tj-I25C

/m\

_
/

c"

DUTt CYC .E{%

M*

0"

p HASE ANC LE

100 (VT)

500
1000
AVERAGE ON -STATE CURRENT- AMPERES

1000
500
AVERAGE ON -STATE CURRENT - AMPERES
5.

1000

.123 'c

FORWARD POWER DISSIPATION FOR

RECTANGULAR CURRENT WAVEFORM

6.

1031

AVERAGE FORWARD POWER DISSIPATION

1500

C701

w:iii

EXPECTED| RANGE |0F GATE (I s

:hara'cteris

'ic

VS.

VG

and repetitive! PULSE

Ut^

50.

S(3"

\?5&

30

ft

IfS^I

"Nc

10.

40C

fo
fc *,

REGION OF

~
'

TRIGGER NG

-25

-rrrT5r;40C,uvMIN V

3.

l?

2.

SOUHLt
LOAOLINES

I4V/35Q

20V/I0Q
i

7.

4
ON- STATE VOLTAGE

6~

5
-

'.I

VOLTS

1.

2.
-

INSTANTANEOUS GATE CURRENT

MAXIMUM ON-STATE CHARACTERISTICS

6.

AMPERES

TRIGGERING CHARACTERISTICS

8.

?ejc

NOTES:
1. Add .006C/W

.c

c/w_

interfaces

to account for both case to dissipator

when properly mounted;

e.g.,

RQjs = .029

C/W. See Mounting Instructions.

2.

DC Thermal Impedance is based on average full cycle

junction temperature. Instantaneous junction temperature may be calculated using the following modifications:

end of conducting portion of cycle

120 sq. wave add ,0025C/W along entire curve
180 sq. wave add .001 8C/W along entire curve
180 sine wave add .001 0C/W along entire curve

end of full cycle

any wave, subtract .001C/W along entire curve.

I.

SECONDS
9.

TRANSIENT THERMAL RESISTANCE

JUNCTION-TO-HEATSINK

Z^
I

|-8.3ms

TM (SUP)

f--

8.3ms

V REAPPLIED

5V DRM
t

^.67V,RRM

10.

SUPPRESSIBLE SURGE CURRENT TEST

1032

8.

10

^
C701

SNUBBER RESISTANCE (OHMS)'

MIN.

JO

2000

NOTES:

30

_20

\\

Repetitive

Low Gate

> 1000

I 800
700

Source
Pulse Width, t
p
Current Rise Time,

v'
/v

/
1

CIRCU
di*

"\
'

Drive

High Gate Drive

14V/35ohms
>20/is

20V/10ohms

<2

<0.5jUs

tr

>10;US

'Permissible circuit di/dt excluding snubber discharge. Repetitive di/dt is SPCO recommended maximum condition
to achieve most industrial requirements for service life. It
meets or exceeds the JEDEC test requirements for certiStd. Sk. 516 (1972). Nonfication set forth in
repetitive di/dt meets the JEDEC 5 second rating.

iS

NEMA

500

Low Gate Drive

Low Gate Drive

Non-Repetitive

a 900
z

600

Non-Repetitive High Gate Drive

Repetitive High Gate Drive

-+++

Code:

T<j#

"Snubber

discharge, s , is treated separately using the minivalue of snubber resistance indicated above. This
applies for long industrial life (20 30 years) in combination with circuit di/dt.
i

mum

50

100

150

CIRCUIT COMMUTATING

11.

ALLOWABLE DI/DT AND SNUBBER

RESISTANCE
2,000,000

200,000

1,500,000

150,000
Tj_5 I25C
Iz

1,000,000

100,000
n

000,000 CO
a
600,000 o

80,000
u
i.

^'

di

J&.
jr-y

^*

<&

60,000

S
< 50,000

500,000

I 40,000

400,000

*"

* 30,000
3
U
2 0,000

^TSM

300,000

co

N
UJ
IE
a.

Z
200,000

<

u
150,000

15,000

10,000
di/dt

12.

10

456789

100,000
ID

TIME BASE WIDTH OF HALF SINEWAVE - MILLISECONDS

(omps//is)

PEAK RECOVERY CURRENT

13.

a
NON-REPETITIVE TSM AND l t CAPABILITY
FOR FUSE COORDINATION
l

OUTLINE DRAWING

SYMBOL
A

$B
C

INC HES

MIN

1.700

*E
F

MAX

MILLIU IETERS
MIN
MAX

0.200 0.240 5.08

6.10
0.140
3.56
16.000 20.000 406.40 508.00
1.900

43.18

48.26

25.40

2718

2.960

WHITE WIRE

1033

75.18

1.000

1.070

.005

.067

0.13

<t>J

0.136

0.146

3.45

TERMINAL

NOTES

K
L

.070

.030

.70

3.71

1.78

6350

2.500

0.76

C701

C701

ASSEMBLY OF PRESSPAKS TO HEAT DISSIPATORS

The following instruction is
stable thermal and electrical

essential for maintaining low,

3.

resistances associated with the

Presspak to heat dissipator surfaces.

1.

<

.0005 inch and surface

32

2.

is

(Recommended mount-

#2 or G322L;
aluminum use SF1154
ferably, or G623 or G322L;
nickel-plated aluminum use SF1154 or G623;
silver-plating is not recommended.

based upon these requirements.)

4.

G322L

bare copper

finish

The
The TIR of
a fully tested Presspak may run higher but not exceed
.001 inch not including some minor nicks and scratches

dissipator surface should be equally as good.

ing force

compound

below. Rotate the Presspak to properly

prior to factory electrical test in pressure fixtures.

also associated with test fixtures.

of grease or

bare

use

aluminum

or LS2037*;

use Alcoa

tin-plated copper or

MOUNTING

Center holes on

evenly distributed over the

Although plated surfaces are recommended for aluminum and copper heat dissipators, bare surfaces may be

top and bottom of the Presspak are for locating.

if

careful attention to cleaning

and treating

is as-

sured. Plated surfaces and Presspaks should be lightly

sanded with 600

plied

as

grit

paper, then oil or

vigorously

abraided

with a

fine

"Scotchbrite" coated with Alcoa

Alcoa

compound

ap-

recommended. Unplated surfaces should be

#2

compound

wire

brush or

3M

#2 compound. The

should be removed and the recommended

applied.

1034

full

area.

NOTES:
a)

Silicone oil SF1154, 200 centistoke,

G623, and yellow compound G322L

clear

silicone grease

are products of the

General Electric Company; compound Alcoa #2 is a product of Aluminum Company of America; and LS2037 black
compound is product of Arco Company, 7301 Bessemer
Avenue, Cleveland, Ohio.
b) Limit maximum joint temperature to 95C, except for those
prepared with SF1154 or G322L, which are limited to

150C.

pre-

Assemble with specified mounting force applied through

a self-leveling swivel connection. The force has to be

SURFACE DEOXIDATION AND CLEANING

used

dis-

tribute the applied agent.

INSPECTION OF MATING SURFACES

TIR

silicone oil or thin layer

as indicated

Check each mating surface for nicks, scratches, flames

and surface finish. The Presspak surface has a total indicator reading

FINAL SURFACE TREATMENT

Apply

High Power

Silicon

C702

Controlled Rectifier

1000 A Avg. Up To 2400 V

AMPLIFYING GATE

Electric C702 Silicon Controlled Rectifier feature the newly

developed multi-diffusion technology to combine high blocking voltage capability with low on-state conduction losses.

The General

The C702 is designed specifically for phase control applications like DC

motor control and power supplies, cycloconverters and current regulated
inverters.

FEATURES:

High Repetitive DI/DT

DV/DT

High

Excellent Surge and

with Higher Selections Available

2

t Current Ratings for Ease of Fusing

Rugged Hermetic Ceramic Package with 1" Creep
Guaranteed Turn-Off Time Selections of 100 /usee Available
Complementary Diodes and Mounting Hardware Available

IMPORTANT: Mounting

on the

instructions

last

page of this specification must be followed.

MAXIMUM ALLOWABLE RATINGS

TYPE

REPETITIVE PEAK OFF-STATE

REPETITIVE PEAK OFF-STATE

AND REVERSE VOLTAGE

v drm/Vrrm 2

AND REVERSE VOLTAGE

Tj =

-40Cto+125C

C702LD
C702LC
C702LB
C702LA
C702L

v drm/Vrrm 2
Tj = 0Cto+125C

less

Repetitive Rate-of-Rise of

<

2
I

(for fusing)

Depends on Conduction Angle (See Charts

and 2)

15,000 Amperes

Anode Current Turn-On

Interval

60 Hz)

Switch

From <1000V

125A//xsec

933,000 Ampere 2 Seconds

200 Watts @ 40/usec Pulse

(at 8.3 milliseconds)

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, Pq(av)
Peak Reverse Gate Voltage, VGRM
Storage Temperature,

2500 Volts
2400
2300
2200
2100

than 0.3C/W.

Average Forward Current, On-State

Peak One-Cycle Surge On-State Current, I TSM
(Switching Rates

Tj = -40Cto+125C

2500 Volts
2400
2300
2200
2100

2400 Volts
2300
2200
2100
2000

Half Sine Wave Waveform, 10 msec maximum pulse width.

V DRM/ V RRM rating s assume Presspak mounted to a heat dissipator of

Maximum

TRANSIENT PEAK REVERSE

VOLTAGE, V RSM

5 Watts
5 Volts

T STG

-40C to +125C

Operating Temperature, Tj

-40C to +125C
5000 Lb. + 1000 - Lb.
22.2 KN + 4.4-0 KN

Mounting Force Required

NOTES:
Surge current rating

EIA-NEMA Standard RS-397, Paragraph 5.2.2.1.

- 20 volts, 10 ohms; maximum switching voltage - 1000 volts; short-circuit gate supply current risetime - 0.5jUsec.
(This short-circuit current may be measured with a TEKTRONICS current probe): RC Snubber circuit used across
SCR: 22 ohms, 0.5/tf.
Repetitive di/dt rating is established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6.
is

established in accordance with

Required trigger source

1035

C702

CHARACTERISTICS
TEST

SYMBOL

MIN.

TYP.

MAX.

UNITS

Peak Reverse and Off-

Idrm

"

10

15

mA

Tj = +25C,

State Blocking Current

and

45

65

mA

Tj =+125C,

.023

C/Watt

TEST CONDITIONS

VDRM

VRRM

Irrm
Peak Reverse and Off-

Idrm

State Blocking Current

and

V= VDRM

VRRM

!rrm
Effective

Thermal

Resist-

R0jc

Double Side Cooled

(Add .006C/W for R0 CS )

Junction-to-Case

ance, Junction-to-Case

(DC)

Critical Exponential Rateof-Rise of Forward Blocking Voltage (Higher values

may cause device swit ching)

dv/dt

Delay Time

td

500

1.8

//sec

Switching from 300 volts, 20 volt, 10

C
Gate. 0.5 Msec Rise Time, Tj = 25 C

10

/usee

See Figure 9

70

200

mAdc

V/^tsec

See Figure 9

Gate Pulse Width

VDRM

Tj = +125C,
Open.

200

= .80 Rated, Gate

ohm

Necessary to Trigger

Gate Trigger Current

Igt

T c = +25C, VD = 10 Vdc, R L =

See Figure 9

VGT

Gate Trigger Voltage

5.0

20

35

2.5

4.5

vtm

Peak On-State Voltage

T c = +125C, VD =
R L = 1000 ohms

2.26

Commutated

125

tq

250

/usee

Turn-Off Time

T c = +125C

(2)

(4)
(5)

x Rated,

Amps

VDRM

Peak. Duty

T = 100 Amps.
= 75 Volts min,

Reapplied = 0.5
DRM
Rate-of-rise of reapplied forward block-

= 50V//isec

(linear)

Gate bias during turn-off

Duty Cycle
13,500

.5

VR
VD

ing voltage
(6)

Jtmcsup)

.5

<0.01%

(1)
(3)

Suppressible Surge
Current

ohms

x Rated, R L =

T c = 125C, I T = 3000 Amps.

Volts

Cycle
Circuit

T c = 0C to +125C, VD = 10 Vdc,
Rl = 3 ohms

Vdc

See Figure 9
.3

VD =

T c = +125C,
1000 ohms

(1)

T c = 115C

(2)

VR

= .67

(3)

.67

Vdrm

<

interval,

0.01%

VRRM
Applied, 8.3 msec, after com-

pletion of surge.
(4)

Figure 14.

130
>
|

/m,

:i20
c
J

50-60 HZ

0*

110

r
,

c 0N0UCTI0N

120

ISVYSVl

"i

110

ANCLE

,100

LJ

hr J

% DUTY

ioo

CYCLE

lOOt

90

I
I
I

\oo

\\

;70

< 70

s
60 CONDUC TION ANGLE =60*

\90*\120*

I80 #
'

SO,

200

400

_J

600
800 1,000
1,200
1,400
AVERAGE ON- STATE CURRENT -AMPERES

PERCENT
DUTY CYCLE-

DC

16

2/3

331/3

50

1,600

MAX SOURCE FREQ. 100

400 HZ
200
50
400
600
200
800
1,000
1,200
1,400
AVERAGE ON -STATE CURRENT (AMPERES)

1,800

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR SINUSOIDAL CURRENT WAVEFORM DOUBLE-SIDE COOLED

1036

1,600

1,800

MAXIMUM ALLOWABLE CASE TEMPERATURE

FOR RECTANGULAR CURRENT WAVEFORM
DOUBLE-SIDE COOLED

'

'

C702

in*

CONDUCTION ANGLE- 60 90"l2C^I80 y -DC

,l

PERCENT DUTY CYCLE- 162/3 "," ^50

.

10

8
6

VvVJ

l
0'

l0<

K-

DUTY CYCLE (%)

CONOUCTION AH. E

<I0'

n2
I0 2

3.

4
8 I0 3
2
AVERAGE ON -STATE CURRENT- AMPERES
4

II

USE Recs

K*

I0 4

AVERAGE FORWARD POWER DISSIPATION

FOR SINUSOIDAL CURRENT WAVEFORM

12,000

If

P
'-t
A
1

K>Ot /T)

4
6
8 I0
2
4
AVERAGE ON-STATE CURRENT- AMPERES

8 104

AVERAGE FORWARD POWER DISSIPATION

4.

FOR RECTANGULAR CURRENT WAVEFORM

2 0.005C/W

*g
Hoy

1,000
<

1-

JZ
3S
SI

-<uj

1,000

fog

r- _i

uj9>o

<0<o

a
<
fUQuj

800

xujo

S Z *UJ<UJ
I- _l

Ki2m-

<13

400

UUO
IKO.
"c/w
0.02

^ ^i
^ 004

<^

400

0025

<U)3
UJUJO

iirSc/w
002
0025
0.030
0.04

0.03

0.06
0.08

06
08

0.10

10

0.20
2

5.

AVERAGE RECTANGULAR ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

0.20 -

USE R 8 cs-^oc 05< C/\H

40
50

70
60
AMBIENT TEMPERATURE-C

"10

"

15

ISO >COIKJUCTIO N A MGI E

15

80

90

AVERAGE SINUSOIDAL ON-STATE

CURRENT VS. AMBIENT TEMPERATURE
WHEN USED WITH
VARIOUS HEAT EXCHANGERS

6.

100,000

S^'

0.

< 10,000

200
,'

/\

s'

^SfS^r^*
<y

-12! c

*fr
S
's' ^

50

**

1,000

/
2

ON
7.

4
-STATE VOLTAGE
3

5
-

VOLTS

MAXIMUM FORWARD CONDUCTION

8.

CHARACTERISTIC ON-STATE
1037

910
20
AMPERES PER MICROSECOND
5

MAXIMUM REVERSE RECOVERY CURRENTS

C702

4
.6
.8
2.
4.
INSTANTANEOUS GATE CURRENT-AMPERES
I.

9.

TRIGGERING CHARACTERISTICS

.05

04

NOTES:
1. Add .006C/W to account for both case to dissipator
interfaces when properly mounted; e.g., R0js = .029

R ejc
.023

.01

C/W. See Mounting Instructions.

_c/w

2.

.008
.006

DC

Thermal Impedance is based on average full cycle

junction temperature. Instantaneous junction temperature may be calculated using the following modifications:

.004

.002

end of conducting portion of cycle

- 120 sq. wave add .0025C/W along entire curve
180 sq. wave add .0018C/W along entire curve
180 sine wave add .0010C/W along entire curve
end of

.02

.04

.06 .08

.4

.2

.1

.6

full

cycle

any wave, subtract .001C/W along

entire curve

4 5

.8

TIME -SECONDS

10.

TRANSIENT THERMAL RESISTANCE JUNCTION-TO-HEATSINK

400
300

1,000,000

Tj-I2S*C

'i

it

S^

200
><r

*IKC

> 80

K
UJ

.+6

ioo

> 60

pr^jeSS

>svii
^^
*&
^^\.^ *

^
**

w*

*-

"

"-K8

.^

vt

^^~
^

40,000

30,000

\*<\

^
**

20,000

>

11.

500,000

di/dt

10,000

20

(amps //is)

TIME BASE WIOTH OF HALF SINE WAVE

MILLISECONDS

PEAK RECOVERY CURRENT VERSUS

12.

COMMUTATING CIRCUIT DI/DT

1038

NON-REPETITIVE TSM AND 2 t CAPABILITY

FOR FUSE COORDINATION
l

MIN.

2,000

10

SNUBBER RESISTANCE (OHMS) **

20
3Q

C702

NOTES:
Code:

Non-Repetitive High Gate Drive

Repetitive High Gate Drive

Low Gate Drive

Low Gate Drive

Non-Repetitive
1,500

Repetitive

Low Gate
Source
Pulse Width,

p
Current Rise Time, t r

Drive

High Gate Drive

14V/35ohms
>20jUs

20V/10ohms

<2

< 0.5 Ms

SMOAls

*Permissible circuit di/dt excluding snubber discharge. Repetitive di/dt is SPCO recommended maximum condition
to achieve most industrial requirements for service life-. It
meets or exceeds the JEDEC test requirements for certification set forth in
Std. Sk. 516 (1972). Nonrepetitive di/dt meets the JEDEC 5 second rating.

NEMA

"Snubber

discharge, s , is treated separately using the minivalue of snubber resistance indicated above. This
applies for long industrial life (20 30 years) in combination with circuit di/dt.
i

mum

CIRCUIT

13.

ALLOWABLE

COMMUTATING

DI/DT

200A/JM
di/dt

AND REQUIRED SNUBBER RESISTANCE FOR DIFFERENT SWITCHING VOLTAGES

CURRENT

I
^-ST'TMlSUP)
TM (SUP)

)*

| 8.3ms

VOLTAGE

8.3ms -\

V REAPPLIED

"^-.67V,

RRM

14.

SUPPRESSIBLE SURGE CURRENT TEST

OUTLINE DRAWING

SYMBOL
A
<)>B

C
<)>

CATHODE

ELEMENTARY

DIAG.

6.10
0.200 0.240 5.08
0.140
3.56
16.000 20.000 406.40 508.00

1.700

*E

1.900

G
H

.005

.067

0.13

0.136
.070

0.146

3.45

K
L

* _l

PLATED
SURF
H/lr-

1039

.70

3.71

6350

2.500
.030

TERMINAL
RED WIRE

1.78

WHITE WIRE

SEE NOTE
SEE NOTE 2

2.

TERMINAL

I7k<N

NOTES

75.18

25.40

^1
I

27.18

1,070

PLATED
SURF KM

TTTF0D+

4&26

1.000

0.76

TERM. CD

TERM.

43.18

2.960

<)>J

'ANODE

MILLIN ETERS
MIN
MAX

INC HES
MAX
MIN

(j

C702
C702

ASSEMBLY OF PRESSPAKS TO HEAT DISSIPATORS

The following instruction
stable thermal

and

is

essential for maintaining low,

electrical resistances associated

3.

with the

Presspak to heat dissipator surfaces.

1.

FINAL SURFACE TREATMENT

Apply

as indicated

bare copper

bare aluminum

TIR < .0005 inch and surface *^ finish

tin-plated

dissipator surface should be equally as good.

The
The TIR of

a fully tested Presspak

may

.001 inch not including

some minor nicks and scratches

(Recommended mount-

ing force

is

run higher but not exceed

4.

test fixtures.

use

G322L

use Alcoa

or

dis-

LS2037*;

#2

or

copper or aluminum

ferably, or

prior to factory electrical test in pressure fixtures.

with

compound

below. Rotate the Presspak to properly

Check each mating surface for nicks, scratches, flames

and surface finish. The Presspak surface has a total in-

also associated

of grease or

tribute the applied agent.

INSPECTION OF MATING SURFACES

dicator reading

2.

silicone oil or thin layer

G623

nickel-plated

silver-plating

G322L;
use SF1154

pre-

G322L;
aluminum use SF1154 or G623;
is not recommended.
or

MOUNTING
Assemble with specified mounting force applied through
a self-leveling swivel connection. The force has to be

based upon these requirements.)

evenly distributed over the

SURFACE DEOXIDATION AND CLEANING

full area.

Center holes on

top and bottom of the Presspak are for locating.

Although plated surfaces are recommended for alumiand copper heat dissipators, bare surfaces may be

num
used

if careful

attention to cleaning and treating

NOTES:
is as-

(a)

sured. Plated surfaces and Presspaks should be lightly

sanded with 600

plied

as

grit

paper, then

vigorously

abraided

with a

fine

"Scotchbrite" coated with Alcoa

Alcoa

#2

compound

compound

ap-

surfaces should

be

oil

recommended. Unplated

or

wire

brush or

oil SF1154, 200 centistoke,

G623, and yellow compound G322L

Silicone

clear

silicone grease

are products of the

General Electric Company; compound Alcoa #2 is a product of Aluminum Company of America; and LS2037 black
compound is product of Arco Company, 7301 Bessemer
Avenue, Cleveland, Ohio.

3M

#2 compound. The
(6)

should be removed and the recommended

applied.

Limit maximum joint temperature to 95C, except for those

prepared with SF1154 or G322L, which are limited to
150C.

HEAT SINK SELECTION MADE EASY

(R#ca = 0.3C/W).

The C702 specification sheet marks the introduction of

two new characteristic curves which should greatly facilitate heat sink selection.

average

between the curves

is

possible to linearly interpolate

R#ca-

Figures 5 and 6 plot allowable

These curves have been derived from the following basic

current versus ambient temperature and case-to-

equation:

ambient thermal resistance for the two most frequently

encountered waveforms, 1/3 duty cycle rectangular current

and 180

It

for

sinusoidal current waveforms.

average forward current and

As soon

maximum ambient

Tj =

as the

where

tempera-

known, the designer can specify a heat sink thermal

Note that the graphs span the range of heat sinks
from water-cooled (R#ca = .03C/W) to free-air convection

TA + PAVG x R0ja

Tj = 125C

ture are

For increased

resistance.

15-30 degrees. Figures 5 and 6 can perform this function

by the simple expedient of raising TA by a like amount.

1040

reliability, the usual practice is to derate

Tj

High Speed

C712

Silicon

Controlled Rectifier
Up to 2000 Volts

lOOOA Avg.

AMPLIFYING GATE-

^T

Electric device type C712 is a new pressure-mounted, high

designed for power switching at high voltage and high frequencies (up to 5 KHz). The C7 1 2 gate structure has an involute, interdigitated
pattern to optimize the turn-on area for high di/dt capability and it is processed using a newly developed multi-diffusion technology.

The General
current

SCR

FEATURES:
2000 Volts.

Off-State and Reverse Blocking Capabilities to

Very Low Switching Losses at High Frequencies.

60 /jsec Maximum Turn-Off Time at Severe Operating Conditions with Feedback

diode.

Involute, Interdigitated Gate for High di/dt Capability.

Narrow

l" Creepage-Path, Glazed-Ceramic Package.

Pulse Capability for

IMPORTANT:

PWM

Inverter

Mounting instructions on the

last

Commutating SCR Socket.

page of

C702

specification

must be followed.

MAXIMUM ALLOWABLE RATINGS

REPETITIVE

REPETITIVE

TRANSIENT PEAK REVERSE

VOLTAGE, Vrsm

Tj = -40C to +125C

Tj = 0C to +125C

Tj = -40C to +125C

2000 Volts

2100 Volts
2000
1900
1800
1700
1600

2100 Volts
2000
1900
1800

v drm' v rrm'
TYPE

C712L
C712PT
C712PN
C712PS
C712PM
C712PE

Vdrm/Vrrm

1900
1800

1700
1600
1500

1700
1600

Consult factory for lower rated voltage devices.

Peak One-Cycle Surge On-State Current,

Maximum

Rate-of-Rise of

Repetitive di/dt Rating

2
I

(for fusing)

TSM

20,000 Amperes
800 A/^sec

(8.3 msec)

Anode Current Turn-On

Interval

(Switching

From 1200

Volts)

200

1,660,000 Ampere

(at 8.3 milliseconds)

A ^ sec

Seconds
10 Watts

Peak Gate Power Dissipation, P GM

Watts

Average Gate Power Dissipation, Pg(av)

Peak Reverse Gate Voltage, VGRM

Storage and Operating Temperature, TSTG and Tj
Mounting Force Required

-40

to

KN +

+12S C

4.4 -

5000 Lb. + 1000

22.2

? ^?*
Lb.

KN

NOTES:
l

10 msec voltage sinewave.

EIA-NEMA

2 di/dt rating established in accordance with

snubber circuit in parallel with the
0.25 /Zf, 20

ohm

Standard RS-397, Section 5.2.2. This di/dt

DUT.

1041

is in

addition to the discharge of a

CHARACTERISTICS
C712

TEST

SYMBOL

Peak Reverse and On-

Idrm

State Blocking Current

and

MIN.

TYP.

MAX.

UNITS

20

60

mA

.023

C/Watt

TEST CONDITIONS

Tj = +125C,

VDRM

VRRM

!rrm
Effective

Thermal

Resist-

R<9jc

dv/dt

500

Double-Side Cooled

(DC)

ance, Junction-to-Case
Critical Linear Rate-of-Rise
of Forward Blocking Voltage (Higher values may
cause device switching)

Delay Time

td

Gate Pulse Width

Necessary To Trigger
Gate Trigger Current

Igt

V/jUsec

VGT
VTM

/usee

Switching from 140 Volts, 20 Volt, 10

Gate 0.5/isec Rise Time, Tj = 25C

10

Msec

Tj = 25C

120

mAdc

5.0

30

T c = 25C, V D =

3.0

Vdc

1.45

Volts

tq

50

/isec

RL

10 Vdc,

T c = +125C, V D =

.5

= 3

x Rated,

Ohm

Ohms

RL

Ohms

T c = 0C

to +125C,

VD

= lOVdc,

RL

Ohms

T c = +125C, I T = 1000 Amps. Peak

Duty Cycle

Conventional Circuit Commutated Turn-Off Time

(With Reverse Voltage)

VRRM

1.5

Peak On-State Voltage

= .80 Rated

1000
Gate Trigger Voltage

VDRM

Tj = +125C,
Gate Open.

(4)

0.01%

T c = +125C

(1)

(2)
(3)

<

T = 500 Amps.

V R > 50 Volts
80% VDRM Reapplied

Rate-of-Rise of Forward Blocking Voltage = 200 V//usec

(6) Gate Bias = Open During Turn-Off
Interval =
Volts, 100 Ohms
(5)

Conventional Circuit Cornmutated Turn-Off Time

(With Feedback Diode)

*q

55

60

jusec

<

(7)

Duty Cycle

(1)

T c = +125C

0.01%

= 500 Amps.

(2)

IT

(3)

VR

(4)

80% VDRM

= 2 Volts Min.
Reapplied

Rate-of-Rise of Forward Blocking Voltage = 200V//usec.

(6) Gate Bias = Open During Turn-Off
(5)

Interval
(7)

Duty Cycle

<

0.01%

10

2 500

00

400

50 Hz

"5000

V65"<

I
50
1.

100

ZOO

400 6008001000 2000

PULSE BASE WIDTH (/iSEC)

4000 6000800010000

200

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH AT T c = 65C

2.

1042

400 6008001000 2000

PULSE BASE WIDTH (/ttSEC)

4000 6000800010000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT VS. PULSE WIDTH AT T c = 90C

C712

s
8

>

v.

"s

*^**_

V)

^ X

'

v.

S.20

\5

NOTES
1.

Switching capability and

3 OR

XX.

04

/ \
I
\

UJ

0.

0.1

V DRM

Switching voltage from 15 Volts to 0.8

z
_

Snubber discharge

<

4.

<

50 Amps.

RC

time constant

Msec.

High gate drive, 20V/10 Ohms, 0.5jUsec

rise

time.

\ \

PW

f-

._

^^\~* P

X ^ ^._s 5*.
NS
V
\ SS
s

O0.6
!E

bypass

with

losses

"Siode.

XJ

200
500
IpOO
2p00
PULSE BASE WIDTH M SEC)

5PO0

I0P00

ENERGY PER PULSE FOR SINUSOIDAL

3.

PULSES

io

'V

650

"\

2
6 0Hz
*

4,

300

\40

1,000

60Hz

X)

1,000

4,000
5

50

100

500
200
1,000
2,000
PULSE BASE WIDTH (>u 88C

5,000

200
500
1,000
PULSE BASE WIDTH -

10,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT FOR TRAPEZOIDAL CURRENT
WAVEFORMS FOR T c = 65C
*
*%.

.2,000

5.

2,000

m sec

5,000

10,000

MAXIMUM ALLOWABLE PEAK ON-STATE

CURRENT FOR TRAPEZOIDAL CURRENT
WAVEFORMS FOR T c = 90C

1
'

k,

v.

1\

:v

20= WATT/ SEC/ PULSE

S J0

V s?

"\

l\

o
J

^"^
0.8

NOTES:

~*s :

ss

X^_
0.6

^X.
^V ^

<0.4

^k
di/dt

50

100

-N
"

""Si

IX.
S

Xs

^ i

<.

>

1.

Switching voltage from 15 Volts to 0.8

2.

DI/DT during

Reverse voltage
50 Volts. If no bypass diode
used, recovery switching losses must be added.

4.

RC

5.

High gate drive: 20V/10 Ohms, 0.5/Jsec

Vdrm.

turn-on: 100A//Usec.

<

snubber time constant

is

< 10 jUsec.
rise

time.

pw

ii..

.>

If

"7
y

-|
i

500
ipOO
200
2P00
PULSE BASE WIDTH (/iSEC)

5O00

lOpOO

ENERGY PER PULSE FOR TRAPEZOIDAL

CURRENT WAVEFORMS
1043

C712
lOjOOO

MA>
5,000

Or

C 7I2 FORWARD CONDUCTION

20000

</)
ffi

;iopoo
j

apoo

6,000

'

MIN

3 2,000

4,000

MAX

I REC

1,000

2J000

rj =

25* c

Tj "12

^^

5*C

O
O

800

500

(E

ipoo

z
<

MIN.

di/dt

o5

400

S*

\(3d^>^

200
UJ

H
1

00
2

4
C

7.

I REC

100

N- 3TAT E V OLT/! GE

50

20

100

di/dt (AMPS/Aisec)

FORWARD CONDUCTION CHARACTERISTIC

RECOVERED CHARGE

8.

ON-STATE

(125C)

NOTES:
1. Add .006C/W to account for both case to dissipator
interfaces when properly mounted; e.g., R#
JS = .029
C/W. See Mounting Instructions.

DC Thermal Impedance is based on average full cycle

junction temperature. Instantaneous junction temperature may be calculated using the following modi-

2.

fications:

end of conducting portion of cycle

- 120 sq. wave add .0025C/W along entire curve
- 180 sq. wave add .001 8C/W along entire curve
- 180 sine wave add .001 0C/W along entire curve

end of full cycle

- any wave, subtract .001 C/W along entire curve

TRANSIENT THERMAL RESISTANCE JUNCTION-TO-CASE

NOTES:
no bypass diode is used with this thyristor, the switching losses during
recovery can be significant. The actual magnitude of these losses will
vary widely depending on circuit conditions and snubber design.
If

This curve represents typical recovery losses versus circuit di/dt. Since
is typical, it serves primarily to alert
the equipment designer
to the possible need for special design attention. The switching
losses
this curve

in a

given circuit

SLR
Where SLR

= / T
o

may be
(t)

,V/t)

calculated with the following equation:

dt

the recovery switching losses; I (t) is the recovery current

decay; V|t) is the recovery voltage; and t = o occurs at the peak of the
recovery current. I (t) may be expressed as an exponential decay:

>

(t)

is

Re

(t/T)

Where lp

is the peak recovery current and

= 2.5^(sec. The junction temperature rise
due to the recovery losses may be computed

as follows:
20

43

5
di/dt

30

ATj

2C X)

(A/^SEC)
10.

= F

*ff* R0 JA +0**3,5

RECOVERY CURRENT

Where a

SWITCHING LOSSES

tne DC junction to ambient thermal impedance,

and F is the operating frequency.

1044

r 0ja

is

a. is

the recovery losses,

C712
OUTLINE DRAWING

MILLIMETERS

INCHES

SYMBOL MIN
MAX
0.200 0.240
A

B
C
<t>

CATHODE

G
H
<t>J

1.700

6.10

1.900

43.18

48.26
27.18

NOTES
1

75.18

2.960
1.000

1.070

25.40

.005
0.136
.070

.067

0.13

0.146

3.45

2.
1

.70

3.71

1.78

63,50

2.500

MAX

3.56
0.140
16.000 20.000 406.40 508.00

<t>E

MIN
5.08

0.76

.030

TERMINAL

(J

WHITE WIRE

TERMINAL
RED WIRE

TERM.'^*

'

PLATED
SURF

1045

CI 01 2-1

SCR

C1112-13

LOW AND MEDIUM

CURRENT STACKS

C3512-13

Now, for the first time, from the originator of the Silicon Controlled Rectifier, packaged SCR building blocks, complete
with SCR's, compatible rectifiers, heat sinks, interconnections, and all required hardware in
one package. Requires only
mounting bolts and electrical connections for power and triggering signal. Check the rest of these outstanding features:

FLEXIBLE

DESIGN

Two

3", 5" x 5") and 5 SCR types permit an optimum designed aseach application. Stacks can be mounted in either vertical or horizontal
plane. An almost limitless number of circuit configurations possible.
fin sizes (3" x

sembly

WIDE RANGE OF OPERATING

AND STORAGE TEMPERATURE
SHIELDED TRIGGERING SIGNAL.

Will
.

operate from

65 C to +

50

C Ambient.

Coaxial shielded leads from gate/cathode terminal board to the SCR's minimize the
possibility of erroneous firing caused by extraneous transients or pick up from the

power

PROVEN CONSTRUCTION.

for

leads.

General

long years of experience in designing and supplying thousands of

stacks form the basis for this rugged construction. Painted fins
yield high emissivity, providing optimum ratings without blowers or fans for forced
Electric's

industrial

rectifier

air cooling.

DEPENDABILITY

Backed by a General

Electric

1046

one year written warranty.

C1012-13
G"
w>

:*

S-s
< .
;
s >.

C1112-13

>
r>

>
CH

>

C3512-13

o
-

035

O
<*

<

<

<

Ul

>

>o

*
<#
o

iu

t
af

u,O u

U
Of

Z <

cs
ui

HCO
Q
CD
00

00
CD

v*

iu

X
too
Ozz
SO
o"

00
CD

o3

vO
Ml

"o

u
a

<

<

M
""

<
O
O

1^

IN

u
UJ
>

il

.2 ?

Ul

<

<

<

<

r"

<
6

<

<

IN

IN

<

<
O
CO

10

<
p
IN

<
O

ft

U-

5 c

**

a.

*n

m
Z
<
u
m

o?
i??
c

-e
0. ,3

5
1l
Ul

V
n.

a.

ac
ae

aS a
E

3
U

oi

a
at

< Z

CD
ex.

I
CD

.2 ?

<

co

.E

U")

2 c

at

2 w

0.

<

<

ri

ri

S-w
S"3
E

-a*

J
<

<

<

t/l

to

x'

Ul
0. <J

(9

Of*

u
m
0.

ITAGE

rent

a.

VO
IENT

Millii
Recur

en r>

00

nmOtftOOOO
nh>tnc>40>noo
r-B 1W

OlftOIOOOOOQ
-

*o

n*

* >
*

s
f>

>

,,

3
VOLTA

FORWAI

REVERSE

KOVER

>
moOOOOOQ

rfutomomOO
- w ci n *

rtinomoinooo
c* ci v "

"Hi

-0

s
S

REPETITI

IMUM

ui

AN

noooooog
o**onno2

iu

in

REVER

Ul

r*

D *

ul

(Noi
TRAN

<l
xa

^ S

m*tomoooe

U
.

D.

PEAK

5"
s

e
i

E S

0-3

s-2
e-s.

IMUM

<Z

<

a.

I-sg

l/l

s
as **

2rm
t
set
3

fr

iu

tfVin<04NKN^
ifluiiAiAiniflinio

<<<<<<<<
"r-Nniniii4

zzzzzzzzz

zzzzzzzz

********
drtOWCOrtCOO

'i

<<<<<<<<
--wcxniwo
vvvvvv^^
otowrtrtocJrt

zzzzzzzz

I"
u

-o

~ t

sa

>
w

Du.<Oa)IUQ

X"-

>-.s

3u.<OolXUO

51

p s
c

3u.<0(DXuOui

Ul

OS
S5
:
<SSoz
^
2*"

s
+

10

ae ui

OS
H*

1047

U
3gg
+
U
1

a a
F

sl"

J*

%:

C1012-13
C1112-13
C3512-13

AIR

VELOCITY
FT/MIN

CORftECTION

FACTOR

FREE
CONVECTION
300
IO00
i

NOTES!

(1)

FT/MIN

191

ZOOO

\\ ^*i

60

2.17

DO NOT EXCEED UNDER ANY CONDITION

CONDUCTION
Bo- 60' SO- ieo*
ANGLE

"s

MAX AMPS/CELL

X\
\

X,

1.72

1.00

1000

N
^V ^

61

ZOOO

CORRECTION
FACTOR

FREE
CONVECTION

s.

35

CURVES SHOWhi ARE FOR FREE CONVECTION. APPLY THE

AIR VELOCITY

80

l.OO

90

as

13.3

IL

150*

80 360

15.0

5.9

21.7

OC

250

\^

on

F7

!/fe&_

Z^^T
'

INGLE

go

^ s;

1.

ULL WAV E

RECTIFIED

-IZO*

\60

X/" vXjSON 150*

\ .360'N

2.
OC

AMBIENT TEMP. VS. AVG. FORW. CURRENT

5" FIN-C35

AVERAGE FORWARD CURRENT-AMPERES

1.

AMBIENT TEMP.

VS.

AVG. FORW. CURRENT

3" FIN-C35

AIR VELOCITY

AIR

CORRECTION

VELOCITY

FACTOR

120

FREE

100

FREE
CONVECTION
300

i.?e

1000

l.3Z

1000

1.54

ZOOO

1.35

000

1.00

300

21

63

CONDUCTION

OC

ANGLE
MAX AMPS/CELL

AVERAGE FORWARD CURRENT- AMPERES

3.

AMBIENT TEMP.

VS.

AVERAGE FORWARD CURRENT

AVG. FORW. CURRENT

4.

3" FIN-C11

AMBIENT TEMP.

VS.

FREE

3 2

39

AMPERES

AVG. FORW. CURRENT

CORRECTION

ilR VELOCITY

1.00

300

1.33

2O00

168

CONVECTION

2000

AVERAGE FORWARD CURRENT -AMPERES

5.

? fil

5" FIN-C11

AIR VELOCITY

186

AMBIENT TEMP.

VS.

CORRECTION

,00

I.S?

AVERAGE FORWARD CURRENT - AMPERES

AVG. FORW. CURRENT

6.

3" FIN-C10

AMBIENT TEMP.
5" FIN-C10

1048

VS.

AVG. FORW. CURRENT

4.4

4? K4

C1012-13
C1112-13

C3512-13

REE

Mill
II
FREE CONVECTION

r<I

'CONV ECTION

-4-

10

note: transient thermal resistance

O
*1

from junction to ambient

/-

iu

NO! E

1
ES
-i

<

RANS^

T
F ROM

T HER MAL RE SIST INC F

JU NC T ON TO SMB IENT

300FPM

^Ttf

300 FPM

2000FPM

S
u

r-

H
z

"

in

z
<

f.

"|

10

TIME

2000 FPM

10
IN

MAXIMUM TRANSIENT THERMAL

10

1.0

TIME

SECONDS

*8.

RESISTANCE

IN

SECONDS

MAXIMUM TRANSIENT THERMAL

RESISTANCE

5" FIN-C35

3" FIN-C35

F
1

REE CONVECTION/

Hi

NOTE: TRANSIENT THERMAL RESISTANCE

JUNCTION TO AMBIENT

ll

NO TE: TRANSIENT THERMAL RESISTANCE

AN BIE NT
"RO M JUNC TIO M T

10

300 FPM
i

/a

FRE E

h-fTI

.A
-

1000 FPM

300 FPM

'^2000 FPM

;ONVECTION

-^ n

1000 FPM

2000 FPM

0.001

.01

10

0.1

TIME

IN

MAXIMUM TRANSIENT THERMAL

3" FIN-C10,

10

001

OjOt

TIME

"10.

RESISTANCE

Note:

IN

SECONDS

MAXIMUM TRANSIENT THERMAL

5" FIN-C10,

11

minut the

100

10

1.0

0.t

SECONDS

RESISTANCE

11

maximum ambient

temperature,

divided by the trantient thermal resittance:

Chart!

7, 8, 9,

and 10

define the tempera-

ture rite of the junction

above the ambient

for a tingle load pulte of duration

peak allowable dittipation

trolled rectifier for time

t,

if

Temperature

of

ttarting

from

the

Tj

max

Tamb.

rr

The
con-

ambient temperature, equalt the

Junction

t.

the

in

Ppcak

For

optimum ratingt and further informa-

tion, tee Publication

200.9 entitled "Power

Maximum

Semiconductor Ratingt under Trantient and

SCR

Intermittent Loads."

used

1049

MECHANICAL SPECIFICATIONS

C1012-13
AND WEIGHT

OUTLINE

C1112-13

INCH

(5

C3512, C4012, C1012, C1112

FINS)

OUTLINE

SERIES

C3512-13
1-OOS/

2.834
L 2834
L_

AND WEIGHT

(3

INCH

FINS)

C3S13, C4013, C1013, CI 113 SERIES

i.h

aw~
.M5-L'
+

1.
000

005

000

.500

'i

--Jj

h- 600

*-c

Maximum number
Maximum

of fins/stack

12

Hi-Pof Voltage to Mounting Brackets

2600 V. R.M.S.

Spray

Salt

@ 25C Amb., Sea Level

MIL-STD-202A, Method 101 A, 96

Humidity

hrs.

MIL-STD-202A, Method 103A, 240

hrs.

SCR STACK NOMENCLATURE

C35

12

SCR CELL MODEL

PARALLEL
CELLS/LEG

NUMBER

C35, C10, Cll

C12

MINOR MECHANICAL
MODIFICATIONS
FIN SIZE:

13
12

D-Standard

5" sq.

3"

sq.

MINOR
ELECTRICAL
MODIFICATIONS

SCR PEAK REVERSE VOLTAGE RATINGS

25V
50
A 100
G 150

200
250
C 300
D 400

Polarity of Output, etc.

M -600

SERIES CELLS/LEG

CIRCUIT CONFIGURATION: (Many Additional Variations Are Available Upon Request.)

GH
^+^

single

Phase
Halfwave

Single
(SCR's

O0

Phase Bridge
Common Cathode)

u Qr

Back
"-?
To
A

(SCR

is

Bridge

Cathode)

Phase Bridge
(Fullwave Rectified)

Three Phase Fullwave

(SCR's

Rect.

Common

Back

*Note: Circuit description

Single Phase

Single

^^

Common
X

Special

necessary when ordering stacks to this circuit configuration.

1050

Bridge
Cathode)

(Followed By
Arbitrary

Number)

C1012-13
C1112-13

Controlled Rectifier

C3512-13

select and obtain the Low and Medium Current Combination

your Controlled Rectifier applications.

You may now quickly

SCR

Stacks that

fit

Fast Selection

Rating Tables Cover More Than 300 Stack Models

Availability

Call Your Authorized G-E Semiconductor Distributor

or Semiconductor Products District Sales Manager

CIO

Max Circuit Output

Res. Load 25"C Amb
Volts DC
Amps DC

Circuit
Single Phase Halfwave

~4
-

Back

l)

4.72(180)

^?r

(SCR's Common
Cathode)

Single Phase

(SCR-Rect

Br idge

Common

Cathode)

ac

y^n

T X.
Single Phase Bridge
(Full wave Rectified)

3 Phase Fullwave
Bridge (SCR's Common
Cathode)

Ji)

J5

J??

'

'

12.0
28.5
60.0
91.5
123.0
154.5
186.0
249.0

9.

12.0
28.5
60.0
91.5
123.0
154.5
186.0
249.0

9.44(360)

12.0
28.0
59.7
91.5
123.0
154.0
186.0
249.0

20.0
44.0
91.5
138.5
186.0
223.0
280.5
375.0

Repetitive
Input
Volts "RMS"

AC

44(360)

17

17
35

280
17
35

70
105
140
175
210
280

'

'

6.40(360)

70
105
140
175
210
280

Transient

Cell

PRV

1051

C1013UH1AD1

25
50
100
150
200
250
300
400

35
75
150
225
300
350
400
500

C1013UA1AD1

25
50
100
150
200
250
300
400

35
75

C1013UB1CD1

25

,_ ..,

Model

Number

35
75
150
225
300
350
400
500

25
50
100
150
200
250
300
400

17
35
70
105

(Non-recurrent)

No. of
Fins/
Stack

25
50
100
150
200
250
300
400

200
250
300
400

17
35

140
175
210
280

SCR/

25
50
100
150

17
35

70
105
140
175
210
280

11.85

3" FIN *

PRV-VBO

70
105
140
175
210

68.0
103.0
138.0
173.0
208.0

278.0
Single Phase Bridge

Max

35
70
105
140
175
210
280

15.0(RMS)10. 50(RMS)
33.0

Back

to

7.0
15.0
30.5
46.5
62.0
77.0
93.5
125.0

MOUNTED ON A

11

FA1AD1
AA1AD1
GA1AD1
BA1AD1
HA1AD1
CA1AD1
DA1AD1
FB1CD1
AB1CD1
GB1CD1
BB1CD1
HB1CD1
CB1CD1
DB1CD1

150
225
300
350
400
500
35
75
150
225
300
350
400
500

FH1AD1
AH1AD1
GH1AD1
BH1AD1
HH1AD1
CH1AD1
DH1AD1

C1013UB1AD1

FB1AD1
AB1AD1
GB1AD1
BB1AD1
HB1AD1
CB1AD1
DB1AD1

35

C1013UB1FD1

75

FB1FD1
AB1FD1
GB1FD1
BB1FD1
HB1FD1
CB1FD1
DB1FD1

150
225
300
350
400
500

50
100

35
75
150

150
200
250
300
400

225
300
350
400
500

C1013UF1AD1

FF1AD1
AF1AD1
GF1AD1
BF1AD1
HF1AD1
CF1AD1
DF1AD1

<

C1012-13

C1112-13
C3512-13

CIO

Max Circuit Output

Res. Load 25C Amb
Volts DC
Amps DC

Circuit
Single Phase Halfwa ve
+

<>

^
-,.

Back

Back

to

7.0
15.0
30.5
46.5
62.0
77.0
93.5
125.0

4.72(180)

15.0(RMS)10.50(RMS)
33.0
68
o

(->r*>

c
*

aI
INPUT

Single Phase Bridg s

(SCR's Common
Cathode)
y^\

\&} ^\

^^\y

Single Phase Bridg'e

Common

(SCR-Rect

Cathode)
/>

^S.

Single Phase Bridgt3

(Fullwave Rectified)

-)X

^.

AC
|

-|load
)

3 Phase Fullwav e
Bridge (SCR's Comm on
Cathode)
,

-i

J.

-)

dp ji-)

"^AC INPUt'

103.

138.0
173.0
208.0
278.0
12.0
28.5
60.0
91.5
123.0
154.5
186.0
249.0
12.0

12.0

9.44(360)

91.5
138.5
186.0
223.0
280.5
375.0

210
280
17
35
70
105
140
175

'

6.40(360)

PRV

140
175
210
280
17

17
35
70
105
140
175

210
280

I
1052

(Non-recurrent)

25
50
100
150
200
250
300
400

35
75
150
225
300
350
400
500

25
50
100
150
200
250
300
400

35
75

25
50
100
150
200
250
300
400

17
35
70
105

35
70
105
140
175
210
280

11.85

Transient

Cell

250
300
400

210
280
44(360)

SCR/

25
50
100
150
200

17

70

59.7
91.5
123.0
154.0
186.0
249.0

20.0

17
35
70
105
140
175

105
140
175

9.

5" FIN *

PRV-VBO

35

28.

44.

Max Repetitive
AC Input
Volts "RMS"

210
280

28. 5

60.0
91.5
123.0
154.5
186.0
249.0

MOUNTED ON A

Nc

'

'2

150
225
300
350
400
500

25
50
100
150
200
250
300
400

35
75
150
225
300
350
400
500

HH1AD1
CH1AD1
DH1AD1
C1012UA1AD1
FA1AD1
AA1AD1

CA1AD1

C1012UB1CD1
FBlCDl
AB1CD1
GB1CD1
BB1CD1

HB1CD1
CB1CD1
DB1CD1
4

150
225
300
350
400
500
35
75

C1012UH1AD1
FH1AD1
AH1AD1
GH1AD1
BH1AD1

DA1AD1

75

25
50
100
150
200
250
300
400

Model

Number

GA1AD1
BA1AD1
HA1AD1

150
225
300
350
400
500
35

of

Stack

150
225
300
350
400
500
35
75

F ms/

'

(>

C1012UB1AD1
FB1AD1
AB1AD1

GB1AD1
BB1AD1
HB1AD1
CB1AD1
DB1AD1
C1012UB1FD1

FB1FD1
AB1FD1
GB1FD1
BB1FD1
HB1FD1
CB1FD1
DB1FD1
C1012UF1AD1
FF1AD1
AF1AD1

GF1AD1
BF1AD1
HF1AD1
CF1AD1
DF1AD1

C1012-13
C1112-13

MOUNTED ON A

Cll

Max Circuit Output

Res. Load 25C Amb
Volts

Circuit
Single Phase Halfwave

-$

Back

to

Back

DC

7.0
15.0
30.5
46.5
62.0
77.0
93.5
125.0
156.5
190.0

Amps DC
3.98(180)

Phase Bridge
(SCR's Common
Cathode)

Single Phase

(SCR-Rect

Bridge

Common

Cathode)

Single Phase Bridge

(Fullwave Rectified

15.0(RMS)8.83(RMS)

Iloao}
3 Phase Fullwave
Bridge (SCR's Common
Cathode)

Ji$ J$

12.0
28.5
60.0
91.5
123.0
154.5
186.0
249.0
312.0
376.0

7.

12.0
28.5
60.0
91.5
123.0
154.5
186.0
249.0
312.0
376.0

7.

12.0
28.5
60.0
91.5
123.0
154.5
186.0
249.0
312.0
376.0
20.0
44.0
91.5
138.5
186.0
223.0
280.5
375.0
469.5
565.5

Repetitive
Input
Volts "RMS"

SCR/

AC

Cell

PRV-VBO
25
50
100
150
200
250
300
400
500
600

17

35
70
105
140
175
210
280
350
425

33.0
68.0
103.0
138.0
173.0
208.0
278.0
348.0
422.0
Single

Max

96(360)

25
50
100
150
200
250
300
400
500
600

17

35
70
105
140
175
210
280
350
425

25
50
100
150
200
250
300
400
500
600

17
35
70

105
140
175
210
280
350
425
96(360)

17
35
70
105
140
175

210
280
350
425

5.20(360)

17

35
70
105
140
175
210
280
350
425

10.65

(Non-recurrent)

No. of
Fins/
Stack

Model

Number

35
75

C1113UH1AD1
FH1AD1

150
225
300
350
400
500
600
720

AH1AD1
GH1AD1
BH1AD1
HH1AD1

35
75

150
225
300
350
400
500
600
720
35
75

150
225
300
350
400
500
600
720

25
50
100
150
200

35
75
150
225
300
350

350
400
500
600
720

400
500

500
600

,600

25

35
75
150
225

150
200
250
300
400
500
600

1053

PRV

35
75
150
225
300

50
100

70
105
140
175
210
280
350
425

Transient

25
50
100
150
200
250
300
400
500
600

250
300
400

17
35

C3512-13

3" FIN *

720

300
350
400
500
600
720

CH1AD1
DH1AD1
EH1AD1

MH1AD1
C1113UA1AD1

FA1AD1
AA1AD1
GA1AD1
BA1AD1
HA1AD1
CA1AD1
DA1AD1
EA1AD1
MA1AD1
C1113UB1CD1

FB1CD1
AB1CD1
GB1CD1
BB1CD1
HB1CD1
CB1CD1
DB1CD1
EB1CD1

MB1CD1
C1113UB1AD1

FB1AD1
AB1AD1
GB1AD1
BB1AD1
HB1AD1
CB1AD1
DB1AD1
EB1AD1
MB1AD1
C1113UB1FD1

FB1FD1
AB1FD1
GB1FD1
BB1FD1
HB1FD1
CB1FD1
DB1FD1
EB1FD1
MB1FD1
C1113UF1AD1

FF1AD1
AF1AD1

GF1AD1
BF1AD1
HF1AD1
CF1AD1
DF1AD1
EF1AD1
MF1AD1

C1012-13

C1112-13
C3512-13
Cll

Max Circuit Output

Res. Load 25C Amb
Volts DC
Amps DC

Circuit
Single Phase Half wave

-<>

Back

to

Back

-s

^-

b>

INPUT

i:
$r

T
i

Single Phase Bridge

(SCR's Common
Cathode)

-sgX
>

^7

AC
INPUT

jC

4.72(180)

15.

1
i

-^

"7

12.

Common

28.5
60.0
91.5
123.0
154.5
186.0
249.0

<&%

/
*C

\7

Single Phase Bridge

(Fullwave Rectified)

\y>

*s

o -|loa"d}q-

3 Phase Fullwav e
Bridge (SCR's Cominon
Cathode)

I
a

1'-

r_

A $] Ji$ ^ F

1
t\C

INPUT-^

12.

'

9.44(360)

'

6.40(360)

20.0

11.85

91.5
138.5
186.0
223.0
280.5
375.0
469.5
565.

'

PRV
(Non-recurrent)

75

150

140
175
210
280
350
425

100
150
200
250
300
400
500
600

17

25

35
70
105
140
175

50
100
150
200
250
300
400
500
600

25
50
100
150
200
250
300
400
500
600

17
35
70
105

25
50
100
150
200
250
300
400
500
600

17

280
350
425

44.

PRV-VBO

Transient

35

35
70
105
140
175
210

28. 5

Cell

50

140
175
210
280
350
425

SCR/

25

17
35
70
105

210
280
350
425

60.0
91.5
123.0
154.5
186.0
249.0
312.0
376.0

4C
INPUT

12.
28. 5

60.0
91.5
123.0
154.5
186.0
249.0
312.0
376.0

Cathode)

AC

9.44(360)

312.

Single Phase Bridge

INPUT

'

FIN

225
300
350
400
500
600
720

280
350
425

0(RMS) 10.50(RMS)

5"

25
50
100
150
200
250
300
400
500
600

17

35
70
105
140
175
210

33.0
68.0
103.0
138.0
173.0
208.0
278.0
348.0
422.0

376.0

(SCR-Rect

Max Repetitive
AC Input
Volts "RMS"

15.0
30.5
46.5
62.0
77.0
93.5
125.0
156.5
190.0

*?

MOUNTED ON A

25
50
100
150
200
250
300
400
500
600

17
35
70

105
140
175
210
280
350
425

1054

35
75
150

No. of
Fins/
Stack

C1112UH1AD1

FA1AD1
AA1AD1
GA1AD1
BA1AD1
HA1AD1
CA1AD1
DA1AD1
EA1AD1

300
350
400
500
600
720

MA1AD1
4

225
300
350
400
500
600
720
35
75
150
225

300
350
400
500
600
720
35
75
150
225

300
350
400
500
600
720

C1112UB1CD1

FB1CD1
AB1CD1
GBICDI
BBICDI
HB1CD1
CB1CD1
DB1CD1
EB1CD1
MB1CD1

225
300
350
400
500
600
720
35
75
150

FH1AD1
AH1AD1
GH1AD1
BH1AD1
HHIADI
CHIADI
DH1AD1
EH1AD1
MH1AD1
C1112UA1AD1

225

35
75
150

Model

Number

C1112UB1AD1

FB1AD1
AB1AD1
GB1AD1
BB1AD1
HB1AD1
CB1AD1
DB1AD1
EB1AD1
1

'

'

MB1AD1
C1112UB1FD1

FB1FD1
AB1FD1
GB1FD1
BB1FD1
HB1FD1
CB1FD1
DB1FD1
EB1FD1
MB1FD1
C1112UF1AD1

FF1AD1
AF1AD1
GF1AD1
BF1AD1
HF1AD1
CFIADI
DFIADI
EF1AD1
MF1AD1

<

C1012-13
C1112-13
C35

Max Circuit Output

Res. Load25C Amb
Amps DC
Volts DC

Circuit
Single

Phase Halfwave

~4 J

to

(2

ft
J

Single Phase Bridg 3

(SCR's Common
Cathode)

.N*T
Vxv N

^7

Single Phase Bridg e

(SCR-Rect Common

Cathode)

\s/
Mg)

1
1

INPUT

<5^

\7

^T

~7

Phase Bridg e
(Fullwave Rectified)

Single

J\
L

r-4%

AC
INPUT
1

N,

103
138.0
173.0
208.

278.0
348.0
422.0

INPUT

3(180)

6.

15.0(RMS)13.9(RMS)
33.0
68.0

Back

INPUT

Max Repetitive
AC Input
Volts "RMS"

15.0
30.5
46.5
62.0
77.0
93.5
125.0
156.5
190.0

?)

Back

7.

3 Phase Fullwave
Bridge (SCR's Common
Cathode)

J& J

J>

12.0
28.5
60.0
91.5
123.0
154.5
186.0
249.0
312.0
376.0

12.6(360)

12.0
28.5
60.0
91.5
123.0
154.5
186.0
249.0
312.0
376.0

12.6(360)

12.0

6(360)

60.0
91.5
123.0
154.5
186.0
249.0
312.0
376.0
17.4

Transient

Cell

PRV

17

25
50
100
150

200
250
300
400
500
600

17

17
35
70
105
140
175

35
75

140
175
210
280
350
425

200

17
35
70

25
50
100
150
200

250
300
400
500
600

250
300
400
500
600

FH1AD1
AH1AD1
GH1AD1
BH1AD1
HH1AD1
CH1AD1
DH1AD1
EH1AD1
MH1AD1

720

25
50
100
150
200
250
300
400
500
600

C3513UA1AD1

FA1AD1
AA1AD1
GA1AD1
BA1AD1
HAIADI
CAIADI
DA1AD1
EA1AD1
MA1AD1
C3513UB1CD1
FB1CD1
AB1CD1
GB1CD1
BB1CD1
HB1CD1
CB1CD1
DB1CD1
EB1CD1

150
225
300
350
400
500
600
720
35
75

150
225
300
350
400
500
600
720
35
75

150
225
300
350
400
500
600
720

35
75
150
225
300
350
400
500
600
720

Model

Number
C3513UH1AD1

500
600

150
225
300
350
400
500
600
720

25
50
100
150

No. of
Fins/
Stack

350
400

100
150
200
250
300
400
500
600

17
35
70
105

1055

35
75
150
225
300

35
75

140
175
210
280
350
425

105
140
175
210
280
350
425

(Non-recurrent)

25
50

25
50
100
150
200
250
300
400
500
600

17

35
70
105

7.

SCR/

35
70
105
140
175
210
280
350
425

35
70
105
140
175
210
280
350
425

C3512-13

3" FIN *

PRV-VBO

210
280
350
425

28. 5

20.0
44.0
91.5
138.5
186.0
223.0
280.5
375.0
469.5
565.5

MOUNTED ON A

MB1CD1
4

C3513UB1AD1

FB1AD1
AB1AD1
GB1AD1

BB1AD1
HB1AD1
CB1AD1
DB1AD1
EB1AD1
MB1AD1

C3513UB1FD1

'

FB1FD1
AB1FD1
GB1FD1
BB1FD1
HB1FD1
CB1FD1
DB1FD1
EB1FD1
MB1FD1
C3513UF1AD1
FF1AD1
AF1AD1

GF1AD1
BF1AD1
HF1AD1
CF1AD1
DF1AD1
EF1AD1

MF1AD1

<

C1012-13
C1112-13

C3512-13
Max Circ uit Output
Res. Load 25C Amb
Volts DC
Amps DC

Circui t
Single Phase Halfwave

-.

-J

-4

Back

to

f.^-o

Single Phase Bridge

(SCR's Co mmon
Cathodti)

Cathodt>)

<&
f^

154.

<>>

186.0

7 ^V^
,

'y

249.

312.0
376.0

Single Phase Bridge

(Fullwave Rectified)

isW
<y\

\/

o -{LOAD}o-

Phase

Fiullwave
i

v
'

J?

?>

J? ) J&>
e
I

c input -^

A>

12(360)

44.0
91.5
138.5
186.0
223.0
280.5
375.0
469.5
565. 5

28.5

FIN

Cell

PRV-VBO
25
50
100
150
200
250
300
400
500
600

17

210
280
350
425

25
50
100
150
200
250
300
400
500
600

17

210
280
350
425

25
50
100
150
200
250
300
400
500
600

17
35
70

25

17
35

70
105
140
175
210
280
350
425
17

35
70
105

28.

20.

Bridge (SCR'e Common

Cathod e)
:

12.0

'

60.0
91.5
123
154.5
186.0
249.0
312.0
376.0

AC
INPUT

20.2(360)

28.
60.

91.5
123

^So
t&

"RMS"

5"

SCR/

210
280
350
425

312.0
376.0
12.0

Volts

Input

105
140
175

186.0

(SCR-Rect (Common

AC

20.2(360)

249.

Single Phase Bridge

'

154.

J\
~y
V^
,

Tf

AC

35
70
105
140
175

91.5
123

'yL

>

AC

'

33.0
68.0
103.0
138.0
173.0
208.0
278.0
348.0
422.0
12.0

Max Repetitive

35
70
105
140
175

28.
60.

INPUT

10.1(180)

15.0(RMS)22.4 (RMS)

INPUT

7.

15.0
30.5
46.5
62.0
77.0
93.5
125.0
156.5
190.0

Back

MOUNTED ON A

C35

PRV
(Non-recurrent)

35
75
150

35
75
150

35
75

25
50
100
150
200
250
300
400
500
600

150
225
300
350
400
500
600
720
35
75
150

225
300
350
400
500
600
720

C3512UH1AD1

C3512UA1AD1

FA1AD1
AA1AD1
GA1AD1
BA1AD1
HA1AD1
CA1AD1
DA1AD1
EA1AD1
MA1AD1
4

C3512UB1CD1

FB1CD1
AB1CD1
GB1CD1
BR1CD1
HB1CD1
CB1CD1
DB1CD1
EB1CD1
MB1CD1

225
300
350
400
500
600
720

25
50
100
150

Model

Number

FH1AD1
AH1AD1
GH1AD1
BH1AD1
HH1AD1
CH1AD1
DH1AD1
EH1AD1
MH1AD1

225
300
350
400
500
600
720

225
300
350
400
500
600
720

17
35
70
105
140
175

150
225
300
350
400
500
600
720

150
200
250
300
400
500
600

300
400
500
600

No. of
Fins/
Stack

35
75

35
75
150

200
250

1056

Transient

50
100

140
175
210
280
350
425

210
280
350
425

C3512UB1AD1
FB1AD1
AB1AD1

GB1AD1
BB1AD1
HB1AD1
CB1AD1
DB1AD1
EB1AD1
MB1AD1
5

'

C3512UB1FD1
FB1FD1
AB1FD1

GB1FD1
BB1FD1
HB1FD1
CB1FD1
DB1FD1
EB1FD1
MB1FD1
C3512UF1AD1
FF1AD1
AF1AD1

GF1AD1
BF1AD1
HF1AD1
CF1AD1
DF1AD1
EF1AD1
MF1AD1

Silicon

D5J37

Unijunction Transistor

Please refer to specification

2N2646-47

for further information

on

this device.

ABSOLUTE MAXIMUM RATINGS: (25C)

300

Power Dissipation (Note 1)

RMS

DIMENSIONS WITHIN
JEDEC OUTLINE TO-18
EXCEPT FOR

mw

Peak Emitter Current (Note 2)

Emitter Reverse Voltage

Interbase Voltage

p-flM

LEAD CONFIGURATION

50 ma
2 amperes
30 volts
35 volts

Emitter Current

HTi

I:

Lead Diameter

is

controlled in the

rone between .050 and .250 Irom the seat

plane

mi

of

MTt

2;

Between .250 and end

021

Leads fu*in|

[019! measured

of lead J

held

it

in

muimum

diameter

gmn plane OM

.001

000 below the seating plane ot ttie device

be within 007 of jiue position 'el*

shall
trie

to a

MTt

1:

manmurn width

tab

Measured

mat. diameter of

front

-65Cto+125C
-65Cto+150C

Operating Temperature Range

Storage Temperature Range

u\

.500

(k \
|"

{NOTE

P]

V SEATING

V.0"

3 LE*tS
*"Sof

(NOTE

EMITTER ...E
BASE ONE. ..Bl
BASE TWO. BZ

Eo Y~.

MN

TV.

Vtr

Ttf-k
'\<TO
VV

77

1)

CONNECTED
INTERNALLY
TO HEADER

Bl

LEAOZ
ALL DIME*. IN INCHES AND ARE
REFERENCE UNLESS TOLERANCEC

ELECTRICAL CHARACTERISTICS: (25C)

MIN.

(V BU = 10V) (Note 4)
Interbase Resistance (V BJ! = 3V, I E = 0)
Emitter Saturation Voltage (V BK = 10V, I K = 50 ma)
Modulated Interbase Current (Vm, = 10V, I E = 50 ma)
Emitter Reverse Current (V B2E = 30V, I m = 0)
Peak Point Emitter Current (Vm, = 25V)
Valley Point Current (V BB = 20V, R li2 = 100 n)
Standoff Ratio

Kbbo

1.

3.

4.

MAX.
.85

4.0

12.0

Ko

22
12
25

ma

V E( SAT)

volts

Ib2(MOD)

Ieo
Ip

Iv

VoDl

4
3

/xa

/xa

ma
volts

Derate 3.0 MW/C increase in ambient temperature. The total power dissipation (available
to Emitter and Base-Two) must be limited by the external circuitry.
lOrifd or less, 30 volts or less.
Capacitor discharge
The Base-One Peak Pulse Voltage is measured in the circuit below. This specification on the
D5J37 is used to ensure a minimum pulse amplitude for applications in SCR firing circuits and

power
2.

TYP.

.47

Base-One Peak Pulse Voltage (Note 3)

NOTES:

"Li

D5J37

PARAMETER
Intrinsic

(NOTE

other types of pulse circuits.

The intrinsic standoff ratio v
the equation

is

essentially constant with interbase voltage. v is defined

by

VP = V B B + VD
V P = Peak Point Emitter Voltage
V BB = Interbase Voltage
V D = Junction Diode Drop (Approx. .5V)
r,

Where

I
FIGURE

1057

Silicon

Unijunction Transistor

Please refer to specification

absolute
Power

RMS

2N2646-47

maximum

Dissipation

for further information

ratings:

on

this device.

(25C)

(Notel)

300
50

Emitter Current

Peak Emitter Current (Note 2)

Emitter Reverse Voltage
lnterbase Voltage
Operating Temperature Range
Storage Temperature Range

DIMENSIONS WITHIH
JEOEC OUTLINE TO-18
EXCEPT FOR

mw
mA

LEAD CONFIGURATION

NOTE

2Amperes

1:

lead diameter

is

controlled in Ihe

050 and 250 from

Between 750 and end

lone between

mg

plane

mu

30Volts
35 Volts

of

K!

is

me

seal

ol lead a

held

NOTE 1. lead! having fWrnnum iWnetet

001
|.OI9(m(jCweflSiplieOM
000 betoc the seating plane ol the device
be mthir 007 of true position rel*

shall

-65Cto+125C
-65Cto+150C
EMITTER -E
BASE ONE...BI
BASE TWO... D2

(25C)

electrical characteristics:

MIN.

(V Bli = 10V) (Note 4)

lnterbase Resistance (V P.n = 3V, I E = 0)
Emitter Saturation Voltage (V BB = 10V, I E = 50 ma)
Modulated lnterbase Current (V W = 10V, I E = 50 ma)
Emitter Reverse Current (V B2E = 30V, I B = 0)
Peak Point Emitter Current (Vim = 25V)
Valley Point Current (V BB = 20V, R H2 = 100 fi)
Intrinsic

Standoff Ratio

Rbbo

.82

4.7

V E(S AT)

Ib2(MOD)

12

Base-One Peak Pulse Voltage (Note 3)

9.1

Kil
Volts

1.0

juA

mA

Ieo
Ip

NOTES

MAX.

TYP.

.68

2.0

jt/A

Iv

mA

VoBl

Volts

Derate 3.0 MW/C increase in ambient tei

irature. The total p ower dissipation (available
to Emitter and Base-Two) must be limited by the external circuitry.
Capacitor discharge
10/x.F or less, 30 volts or less.
The Base-One Peak Pulse Voltage is measured in the circuit below. This specification on the
DSJ43 is used to ensure a minimum pulse amplitude for applications in SCR firing circuits and

power

4.

other types of pulse circuits.

intrinsic standoff ratio
the equation

The

-q,

is

essentially constant with interbase voltage,

V p =^Vbb + V d
V P = Peak Point Emitter Voltage
V BB = Interbase Voltage
V D = Junction Diode Drop (Approx. .5V)

Where

1058

FIGURE

-q

is

defined

by

Silicon

Unijunction Transistor

Please refer to specification

maximum

absolute
Power

RMS

2N2646-47

Dissipation

for further information

ratings:

on

this device.

(25C)

(Notel)

300
50

Emitter Current

dimensions within
jedec outline t0-i8
except for

mW

lead configuration

mA
NOTE

2Amperes

Peak Emitter Current (Note 2)

n(

30Volts
35Volts

Emitter Reverse Voltage

Interbase Voltage

plane

trot

Leads taring

is

'

ot lead a

"

NOTE

1:

750

Between 750 and end

021

muanum

i.OISImtasufMingaginEplane

dismelw

OM

.001

.000 beto" the sealing Diane of Hie devu

shall

-65Cto+125C
-65Cto+150C

Operating Temperature Range

Storage Temperature Range

1:

rone between 050 and

mai. ot

be within .007 o' true position

rel

live to a

maiimum. width tab

NOTE

Measured Irom mai. diametei

1:

REFERENCE UNLESS TOLERM4CEO

electrical characteristics:

(25C)

MIN.

Intrinsic Standoff Ratio (V n u = 10V) (Note 4)

Interbase Resistance (V B = 3V, I E = 0)
Emitter Saturation Voltage (Vn = 10V, I E = 50 ma)
Modulated Interbase Current (Vm, = 10V, I K = 50 ma)
Emitter Reverse Current (V B2E = 30V, I m = 0)
Peak Point Emitter Current (V B = 25V)
Valley Point Current (Vn = 20V, R K2 = 100 fi)

Rrsuo

ii

NOTES:

1.

2.

4.

mA

Ip

12

juA

juA

mA

4
4

Volts

Derate 3.0 MW/C increase in ambient temperature. The total power dissipation (available
to Emitter and Base-Two) must be limited by the external circuitry.
10/x.F or less, 30 volts or less.
Capacitor discharge
The Base-One Peak Pulse Voltage is measured in the circuit below. This specification on the
D5J44 is used to ensure a minimum pulse amplitude for applications in SCR firing circuits and

power
3.

fefi

Volts

12

Ieo

Vom

.82

IlVJ(MOD)

Base-One Peak Pulse Voltage (Note 3)

MAX.

9.1

4.7

Vk(SAT)

Iv

TYP.

.68

other types of pulse circuits.

intrinsic standoff ratio
the equation

The

ij,

is

essentially constant with interbase voltage. v

= Vbb + V D
= Peak Point Emitter Voltage
Vun = Interbase Voltage
Vd = Junction Diode Drop (Approx.

Where

VP
VP

r,

1059

FIGURE

,5V)

is

defined by

Silicon

Unijunction Transistor

Please refer to specification

absolute

2N2646-47

maximum

for further information

ratings:

this device.

(25C)

Power Dissipation (Note 1)

RMS

on

300
50

Emitter Current

Peak Emitter Current (Note 2)

mw
mA
DIMENSIONS WITHIN
JEDEC OUTLINE TO

2Amperes

Emitter Reverse Voltage

EXCEPT FOR
LEAD CONFIGURATION

30 Volts
35Volts

Interbase Voltage

Operating Temperature Range

Storage Temperature Range

-65Cto+125
-65Cto+150

<

LEADS
ALL Dtt*-tK INCHES tO ARE 'NOTE
REFERENCE UNLESS TOLERANCED

electrical characteristics:

(25C)

MIN.

TYP.

5)

MAX.

(V BB = 10V) (Note 4)
Inferbase Resistance (V Bli = 3V, I E = 0)
Emitter Saturation Voltage (V BB = 10V, I E =.50 ma)
Modulated Interbase Current (V BB = 10V, I K = 50 ma)
Emitter Reverse Current (V B2E = 30V, I B i = 0)
Peak Point Emitter Current (V BB = 25V)
Valley Point Current (V BR = 20V, R B2 = 100 n)

Iv

mA

Base-One Peak Pulse Voltage (Note 3)

VOB1

Volts

Intrinsic

NOTES

Standoff Ratio

1.

3.

4.

4.7

Ml

9.1

2
12

Ve(SAT)
lB2(MOr>)

Volts

mA
jLlA

.5

Ieo
Ip

Derate 3.0 MW/C increase in ambient temperature. The total power dissipation (available
to Emitter and Base-Two) must be limited by the external circuitry.
Capacitor discharge
10/* F or less, 30 volts or less.
The Base-One Peak Pulse Voltage is measured in the circuit below. This specification on the
D5J45 is used to ensure a minimum pulse amplitude for applications in SCR firing circuits and

power
2.

Rbbo

.82

.68

other types of pulse circuits.

intrinsic standoff ratio
the equation

The

17,

is

essentially constant with interbase voltage.

VP = V BB + VD
VP = Peak Point Emitter Voltage
V BB = Interbase Voltage
V D = Junction Diode Drop (Approx.
r,

Where

1060

FIGURE

.5V)

77

is

denned by

Silicon

Complementary

D5K1
Unijunction Transistor

COMPLEMENTARY UNIJUNCTION
Electric D5K1 Complementary Unijunction Transistor is a silicon
monolithic integrated circuit. It has unijunction characteristics with
superior stability, a much tighter intrinsic-standoff ratio distribution and lower
saturation voltage.

The General
planar,

FEATURES

Guaranteed stability of better than .6% from -15C to +65C and

1.0% from -55C to +150C
Low leakage current less than lOnA
Ability to temperature compensate and calibrate at room temperature

Up

better than

WHAT

to 100
IS

kHz

operation
tv,

A COMPLEMENTARY UNIJUNCTION TRANSISTOR?

The General Electric D5K is a silicon planar passivated semiconductor device

with characteristics like those of a standard unijunction transistor except that
the currents and voltages applied to

it

Standard

Complementary

Unijunction

Unijunction

are of opposite polarity.

have chosen to use this polarity so that standard NPN planar passivated transistor processing techniques
can be used. This results in a unijunction having superior stability and better uniformity than any unijunction
previously available. The much tighter spread of intrinsic-standoff ratio now available is a significant advantage.
For most applications, the polarity is not important.

We

WHAT CAN

THE D5K DO?

The General Electric D5K can be used in most applications now using standard type unijunctions.
stability and uniform properties make it ideal for stable oscillators, timers, and frequency dividers.

Its

unique

of the D5K over conventional UJT's is its predictability over the specified temperature range.
This allows an engineer to use design curves to select the correct R B2 compensating resistor instead of having to
perform expensive temperature testing on individual devices.

The key advantage

The D5K1 has been characterized especially for applications requiring the best possible stability over the extreme
spread, the D5K1 can be
temperature range specified. For most applications, because of the tight R B bo and
compensated in a given circuit with one resistor value by selecting the proper R B2 from Figure 2. For even better
stability, a designer only has to measure the R B bo of a device at room temperature, determine the proper
R BB o/Rb2 ratio from Figure 3, and insert the correct R B2 Using this method, oscillators and timers can be built
offering 0.5% stability over most temperature ranges used.
-q

Frequency dividers can be built with larger countdown ratios and drastically lower capacitor sizes due to the
stability and low charge to trigger value (Q ) Another product advantage, low base 1 to emitter voltage drop at
high current, allows generation of high outputpulses with low base to base voltages.
t

For further application information, refer

to Application

Note 90.72.

\/
1200

/\

Vbb-iovc LTS

F
FIGURE 2

FIGURE 3

V 8B -I2.S VOLTS

k aoo
2

~"^T"
VBB .I3V0 LTS

o COO

test circuit
*cujt only subjected to
temperature change
all resistors %

/\

kSPEQFICATION POINT

FIGURE

^"

^VBB

<IS

VOLTS

jT[

&l
"VBB'ia.avoLTs

"

400
OSCILLATION FREQUENCY - *HZ

^f^r
OSCILLATION FflEOUENCT -

1061

D5K1

absolute

maximum

ratings: (25

Voltage

DIMENSIONS WITHIN
JEOEC OUTLINE TO-

free air)

EXCEPT FOR
LEAO CONFIGURATION

DSKl

Interbase Voltage

30

Current (Note 2)

Average Emitter (Forward)

Peak Emitter (Forward) (Note
Peak Reverse Emitter

1)

mA

150
2
15

mA

300

mW

Power

Average Total (Note

2)

-iU~[

Temperature'

- 55 to + 150
- 55 to + 200

Operating
Storage

electrical characteristics:

(25

C
C

free

air)
Typ.

Max.

0.58

0.60

0.62

Vp

3.2

3.45

3.7

VP

6.1

6.45

6.8

Volts
Volts

Runo

5.5

6.8

8.2

kohms

Verio

8.0

9.5

Min.
Intrinsic Standoff Ratio

(Note 3)

Peak Point Voltage

(V BB = 5V)
(V BB = 10V)
InterBase Resistance

= 0.1mA)

(Ibb
Emitter

Breakdown Voltage

= 1<VA)

(Iebi

Volts

Peak Point Current

(V BB = 10V)

li-

fiA

Valley Point Current

(V BB = 10V)

ly

mA

Emitter Reverse Current

(V EB = 5V)
i

Iebio

0.1

10

VE(sat)

1.1

1.5

10

nA

Emitter Saturation Voltage

(I E

= 50mA, V BB = 10V)

Modulated Interbase Current

(I E = 50mA, V BB =
Peak Pulse Voltage
(Note 4)
Diode Voltage Drop
(Note 3)
Minimum Charge to Trigger

10V)

J-H2(mo<n

OUT

vD

(V BB = 10V)

3.5

4.5

.30

.45

mA
Volts

.60

Volts

PC

50

Qt

Turn-on Time (See Figure 7)

Recovery Time (See Figure 7)

Volts

^011
t-roc

ftsec.

10

/isec.

Relaxation Oscillator Frequency Shift from

25c Value (See Figure

C =

R B2 =

1,

V s = 12.5V)
-15Cto +65C
-55Cto +150C

O.lfiF,

950n,

0.2

0.6

0.4

1.0

Notes:
1.

2.
3.

For capacitor discharge, resistor current limiting is required for capacitors greater than 5 ^F and
recommended for all cases. (A minimum of 15 ohms is required for good temperature stability.)
Derate power and currents linearly to zero at maximum operating temperature.
The intrinsic-standoff ratio (77) is essentially constant with temperature and interbase voltage.
It and the associated diode drop of peak point voltage are denned by the equations
V D = Vp 2 - V BB2
Where V Bm = 10V .001V
_ Vn ~ Vr 2
r,

v
4.

~ V BBI - V BB2

The Base-One Peak Pulse Voltage

V BB2 = 5V
is

measured

in the circuit

shown

is used to insure a minimum pulse amplitude for applications in

types of firing circuits.

1062

in

Figure

SCR

.001

This specification
firing circuits and other
4.

D5K1
FIGURE 4

L-

Qh

(%

- ""
'on

V E (SAT)

....

FIGURE 5

FIGURE 7

FIGURE 6
Complementary Unijunction Transymbol with nomenclature
used for voltage and currents.

Static Emitter Characteristics curves

showing important parameters and

measurement points (exaggerated

sistor

to

show

details).

TYPICAL CHARACTERISTICS
PEAK POINT CHARACTERISTICS
STATIC EMITTER

o
>

CHARACTERS TICS

jl.4

V+25'C

VBB = I4V

7.5

;i.3

<
\_]

v BB =iov
'- V BB

7.4

>

>

or
UJ

;i.o

r-X& Z

i.i

7.3

5V

R BB VS TEMR

UJ

BB

UJ

=,2V

-9

>
UJ
6

10

12

14

16

18

20

7.2

IE-EMITTER CURRENT-mA

10

14

12

-EMITTER CURRENT-juA

-40-20
20 40 60 80 100 120 140
TA -AMBIENT TEMR DEGREES CENTIGRADE

XS
*>
3I0DE DROP VS

TEMPERATURE

.5

Q.

o
Q

.4

o
a
>u

-3

.2

.1

50
70
30
90
-AMBIENT TEMPRATURE-C

+ 10
T.

110

130

150

s TATIC INTER BASE

CHARA CTERISTLCS
EMITTER LEAKAGE CURRENT
VS
TUR

E-
'

20J

SO/

/ 4o/
/

/ 50/
j

EBI

5V

f
r

/
>

25
15
20
INTERSTATE VOLTAGE -VOLTS

fi

-BASE TWO CURRENT-mA

1063

-50
+50
+100 +150
TA -AMB!ENT TEMPERATURE -C

+200

D5K1

APPLICATIONS
TYPICAL CIRCUITS
Since the CUJT has opposite polarities from
standard UJT's, its oscillator circuit Figure
(b) is "inverted." Figure (a) shows a positive,
high energy pulse, while Figure (b) shows a
negative. Circuit in Figure (c) results in
positive pulses for

SCR

S2

triggering.
(

0.1

b)

STANDARD

COMPLEMENTARY

CIRCUIT

CIRCUIT

CUJT CIRCUIT
FOR HIGH ENERGY
TRIGGER PULSES

TO 90 SECOND TIMER

Timer

when power
when voltage

interval starts

to circuit, terminates
to load.

2N2646

is

is
is

330ii

applied
applied

used in oscillator which

pulses base 2 of D5K. This reduces effective

I P of D5K and allows much larger timing
resistor and smaller timing capacitor to be

GE BLACK HAWK

75F3R5A224
22 H

used than would otherwise be possible.

C

(2. 5KHz)

.OI>iF

In next stage, product of R2 and C2 should

be 10 X that of preceding stage (2%). R2
should be between 27kn and 10 meg n.

{*T0
NEXT
DIVIDER

STAGE

CI & C2 .0047 ^F (1%)

Rl 100k n (1%)
R2 lMn (1%)

R4 Ik

fi

(may need

to be adjusted for

R RI( of CUJT)

+V

50 kHz OSCILLATOR
Higher frequency (stable) oscillators are now
possible. Here are typical components for a
50

kHz

circuit.

more nearly

This

is

possible because of the

ideal characteristics of the

^OUTPUT
250 Hz)

DECADE FREQUENCY DIVIDER

variation of

GE BLUE JAY AAI8AI05C

^OUTPUT

R3

<> 33K{1

D5K

(over conventional UJT's). One application

for higher frequency is TV horizontal oscillators. Note the low R I(2
.

1064

10

VOLTS

Complementary
Unijunction Transistor

COMPLEMENTARY UNIJUNCTION
D5K2 Complementary Unijunction Transistor is a silicon
integrated circuit. It has unijunction characteristics with
superior stability, a much tighter intrinsic-standoff ratio distribution and lower
saturation voltage.
The General

Electric

monolithic

planar,

FEATURES

Guaranteed stability of better than 1.0% from 15C

better than

2.0% from -55C

to

Low leakage current: less than 100 nA

Ability to temperature compensate and calibrate at

Up

to 100

WHAT

IS

kHz

+65C and

to

+100C
room temperature

operation

A COMPLEMENTARY UNIJUNCTION TRANSISTOR?

The General

D5K

a silicon planar passivated semiconductor device

with characteristics like those of a standard unijunction transistor except that
the currents and voltages applied to it are of ppposite polarity.
Electric

is

Complementary

Standard
Unijunction

Unijunction

have chosen to use this polarity so that standard NPN planar passivated transistor processing techniques
can be used. This results in a unijunction having superior stability and better uniformity than any unijunction
previously available. The much tighter spread of intrinsic-standoff ratio now available is a significant advantage.
For most applications, the polarity is not important.

We

WHAT CAN

THE D5K DO?

The General Electric D5K can be used in most applications now using standard type unijunctions.
and uniform properties make it ideal for stable oscillators, timers, and frequency dividers.

Its

unique

stability

of the D5K over conventional UJT's is its predictability over the specified temperature range.
This allows an engineer to use design curves to select the correct R B2 compensating resistor instead of having to
perform expensive temperature testing on individual devices.

The key advantage

For most applications now using conventional UJT's, the entire D5K2 population can be compensated in a given
by selecting the proper R B2 compensating resistor from Figure 2. For even better
stability, a designer only has to measure the R,,,,,, of a device at room temperature, determine the proper R bb0 /Rb2
ratio from Figure 3, and insert the correct R F>2 Using this method, oscillators and timers can be built offering
1.0% stability over most temperature ranges used.
circuit with one resistor value

Frequency dividers can be built with larger countdown ratios and drastically lower capacitor sizes due to the
stability and low charge to trigger value (Q ) Another product advantage, low base 1 to emitter voltage drop at
high current, allows generation of high outputpulses with low base to base voltages.
t

For further application information, refer

to Application

Note 90.72.

^lOVOLTS

15

-Wr

I^T

^/^BB"

SPECIFIC*

15

VOLTS

"l

T"--^

FIGURE

FIGURE 2

V BB -(2.5 VOLTS

TEST CIRCUIT
*CUJT ONLY SUBJECTED TO
TEMPERATURE CHANGE
ALL RESISTORS 1%

1^

OSCILLATOR FREQUENCY -

FIGURE 3

M l5VOLTS"^.

/<,.

2.5 VOLTS

i
V BB'

O VOLTS

HZ
OSCILLATION FREOUENI

1065

D5K2

absolute

maximum

ratings: (25

DIMENSIONS WITHIN
JEOEC OUTLINE TO-L

free air)

EXCEPT FOR
LEAD CONFIGURATION

D5K2

Voltage

Interbase Voltage

20

Current (Note 2)

Average Emitter (Forward)

Peak Emitter (Forward) (Note
Peak Reverse Emitter

mA

150

1)

15

mA

200

mW

Power

Average Total (Note

2)

Temperature

- 55 to + 100
- 55 to +150

Operating
Storage

electrical characteristics:

(25

free

c
C

air)
Typ.

Max.

0.58

0.60

0.62

3.2

3.45

3.7

6.1

6.45

6.8

15

8.0

9.5

Min.
Standoff Ratio (Note 3)

Intrinsic

Peak Point Voltage

Vr
vr

(V BB = 5V)
(Vbb

= 10V)

Volts
Volts

InterBase Resistance

(Ibb
Emitter

= 0.1mA)

KlIBO

kohms

Breakdown Voltage

(Iebi

= 1<VA)

Verio

Volts

Peak Point Current

(Vbb

= 10V)

15

Ip

pA

Valley Point Current

(V BB = 10V)

Iv

mA

Emitter Reverse Current

(V E bi
5V)
Emitter Saturation Voltage
(I E

MiBlO

= 50mA, V BB = 10V)

E(sat>

0.1

10

1.1

1.5

10

Modulated Interbase Current

(I E

= 50mA, Vbb = 10V)

iBSfmod)

Peak Pulse Voltage

(Note 4)
Diode Voltage Drop
(Note 3)
Minimum Charge to Trigger

(Vbb

= 10V)

V or

3.5

4.5

VD

.30

.45

Volts

mA
Volts

.60

Volts

PC

50

Qt

nA

Turn-on Time (See Figure 7)

Recovery Time (See Figure 7)

^sec.

10

jusec.

Relaxation Oscillator Frequency Shift from

25c Value (See Figure 1,

C = O.lixF, R 2 = lkn, V s

= 12.5V)
-15Cto +65C
-55Cto +100C

0.3

1.0

0.5

2.0

%
%

Notes:
1.

2.
3.

For capacitor discharge, resistor current limiting is required for capacitors greater than 5 ,i*F and
recommended for all cases. (A minimum of 15 ohms is required for good temperature stability.)
Derate power and currents linearly to zero at maximum operating temperature.
The intrinsic-standoff ratio ( v ) is essentially constant with temperature and interbase voltage.
It and the associated diode drop of peak point voltage are denned by the equations
V D = V r2 - V V B B2
Where V BB1 = 10V .001V
_ Vim - Vr2
:

V
4.

~ V BB1 - V BB2

The Base-One Peak Pulse Voltage

V BB2 = 5V
is

measured

in the circuit

shown

is used to insure a minimum pulse amplitude for applications in

types of firing circuits.

1066

in

Figure

SCR

.001V

This specification
firing circuits and other
4.

EMITTER
V0LTA6E
-

NEGATIVE
RESISTANCE
RESION
-PEAK POINT

FIGURE

EMITTER TO BASE-

ONE DIODE

CHARACTERISTIC

V E (SAT)

FIGURE
FIGURE 7

FIGURE
Static Emitter Characteristics curves

showing important parameters and

measurement points (exaggerated

Complementary Unijunction Transymbol with nomenclature

used for voltage and currents.

sistor

show

to

details).

TYPICAL CHARACTERISTICS
PEAK POINT CHARACTERISTICS
V BB

o
>

EMIT TER CHARACTERISTICS

STA ric

Tfl

I4V

7.5
"BB VS TEMR

+ 25"C

(3

<

8 74
>

V BB =!OV

bj

^- V BB

^IB 2

5V

7.3

.10

V
UJ

BB

=,2V

10

12

14

>
w
16

7.2
2

I E -EMITTER CURRENT-mA

10

-40 -20
20 40 60 80 100 120 140
TA -AMBIENT TEMR DEGREES CENTIGRADE

14

12

EMITTER CURRENT-juA

IS

bB">0 VOLTS
7

6
5I0DE

DROP VS TEMPERATURE

I,

5
S

10

_h

E
*-

'

V
'

-50

-30

T.

50

30

+10

-10

70

90

110

130

150

-AMBIENT TEMPERATURE-C

-*

-4O

TA

80
10
SO
2O
-AMBIENT TEMPERATURE

40

120

100

160

STATIC INTER BASE CHARA CTERISTICS

EMITTER LEAKAGE CURRENT

VS
- TEMPERATUR

10

/i

LLE

-o

VS
(T A =25 C)

VOLTAGE

1-

'

_l

o
>

2oy

3o/

<
c!

/ 40/

>
r

<

5
,

/
/v EBI

5V

/ 50/

CC
UJ

s
*P

:
1

/
4
(

ffi

m
>

NC TE>

^
/

"emitter protec TIOI* zz:

THIS VOLTAGE
r

-7
5

-50
+50 +100 +150
TA -AMBIENT TEMPERATURE - C

INTERSTATE VOLTAGE -VOLTS

1067

+200

D5K2

APPLICATIONS
TYPICAL CIRCUITS
Since the CUJT has opposite polarities from
standard UJT's, its oscillator circuit Figure
(b)is"inverted." Figure (a) shows a positive,
high energy pulse, while Figure (b) shows a
negative. Circuit in Figure (c) results in
positive pulses for

SCR

_N^

triggering.
(a|

0.1

b)

STANDARD

COMPLEMENTARY

CIRCUIT

CIRCUIT

CUJT CIRCUIT
FOR HIGH ENERGY
TRIGGER PULSES

TO 90 SECOND TIMER

Timer

330 Jl

when power is applied

to circuit, terminates when voltage is applied
to load. 2N2646 is used in oscillator which
pulses base 2 of D5K. This reduces effective
I r of D5K and allows much larger timing
interval starts

> 33K&

GE BLACK HAWK
75F3R5A224

and smaller timing capacitor to be

used than would otherwise be possible.

resistor

.22 H F

C'GE BLUE JAY AAI8AI05C

aOUTPUT(2.5KHz)

^OUTPUT
(250 Hz)

DECADE FREQUENCY DIVIDER

.01/iF

In next stage, product of R2 and C2 should

be 10 X that of preceding stage (2%). R2
should be between 27kn and 10 meg n.

(*TO
NEXT
DIVIDER

STAGE

CI & C2 .0047
(1%)
Rl 100k (1%)
R2 lMfi (1%)
fi,F

12

R3

R4 Ik

fi

variation of

(may need

to be adjusted for

R Bn of CUJT)

-HO FREQUENCY DIVIDER

50 kHz OSCILLATOR
Higher frequency (stable) oscillators are now
Here are typical components for a

possible.

50

kHz

circuit.

more nearly

This

is

possible because of the

ideal characteristics of the

D5K

(over conventional UJT's). One application

for higher frequency is TV horizontal oscillators. Note the low R li2
.

1068

10

VOLTS

Silicon

Programmable
Unijunction Transistor

D13T SERIES
D13T3

(PUT)

D13T4
The General Electric D13T3and D13T4are 100 volt versions of the popular 2N6027 and 2N6028 Programmable Unijunction Transistors (PUT).
advantage of using higher
improving timing stability.
application information please refer to Application Note 90.70.

These devices

offer the designer the additional

circuit voltages thus

For

PUT

absolute

maximum

ratings: (25C)

Voltage
Gate-Cathode Forward Voltage
Gate-Cathode Reverse Voltage
Gate-Anode Reverse Voltage
Anode-Cathode Voltage

+ 100 V
5 V
+ 100 V
100 V

&f-

Current

DC Anode Currentt

50

mA

Peak Anode, Recurrent Forward

(100 p. sec pulse width, 1% duty cycle)
(20 fi sec pulse width, 1% duty cycle)
Peak Anode, Non-recurrent Forward

2
5

(10/zsec)

20

Gate Current

R2

SYMBOL

"2

Rg=

k|pr

'

4>

Ia

A
A

>

Power
Total Average Powert

300

Temperature
Operating Ambientt
Temperature Range

.265

+b2
4>D

.016
.165

.019
.205

.110

.155

.095
.045
.500

.055

~IL+

+ R2

Qz
*

mA

MILLIMETERS
MAX.

MIN.
4.32
.406

6.73

4.19

5.21

2.79
2.41

3.94
2.67

1.14

1.40

.105

.075

.oeo

.115

1.90

2.03

mW

50Cto+100C

1%/C above 25C

V2CV capacitor discharge energy with no current limiting- non repetative

Figure

electrical characteristics: (25C)

Fig .No
Ip

Min.

D13T4

vT

.2

=10

Volts)

(R G = Meg)
(Ro = 10k)
(R G = 200J2 )
Anode Gate- Anode Leakage Current
(V = 100 Volts, T = 25C)
(T = 75C)
Gate to Cathode Leakage Current
(V = 100 Volts, Anode-cathode short)
Forward Voltage (I F =50mA)
Pulse Output Voltage
Pulse Voltage Rate of Rise

.2

Iv

.15 M

1.0,1

1.6
.6

OKS

.6

.2

.6

Vo

25m

70

25

1.5

l.O

mA
nA

100 n A

100

100 n A
1.5 Volts
Volts
80 nsecs

80

1069

A
A

100

1.5

4
4

/x

10

10

VF
t,

A
A

Volts
Volts

.2

50

^OAO

Max.

Min.

(R G = Meg)
(Ro =10k)
Valley Current
(V,

Max.

Offset Voltage
(V, =10 Volts)

Figure 2

(unless otherwise specified)

D13T3
Peak Current
(V
=10 Volts)
(R = Meg)
(Ro = 10 k)

2.92

1= LEAD DIAMETER
IS CONTROLLED IN THE
ZONE BETWEEN .070 ANO .250 FROM THE SEATING
PLANE. BETWEEN .250 AND END OF LEAD A MAX
OF .021 IS HELD

tDerate currents and powers

ttE

.483

12.70

NOTE

250 M J

Capacitive Discharge Energytt

INCHES
MAX.

.170

R|

MIN.

Figure 4

D13T SERIES
D13T3, D13T4

VALLEY CURRENT
_

GATE " ON STATE " CURRENT

I00

GATE TO C ATHODE ASSUMED SHORT

CIRCUIT FO R

PROGRAMM
TRANSISTO R _i
1

in

J#rf

'
I

^
^
1

IO

f-z:;;
tiif

r sp K

SPECMA

DI3T3

l* AX

SPEC MAX

EC MAX
hii* DI3T4

in

DI3T.

is

0I3T4^

Jr

''HUlf

FOR I3T 1
- PROGRAM MABLE UNIJUN CTION

-14+

III

IN

OHMS

(IN

-.1.

11

Ol

01

100

10

GATE SOURCE IMPEDENCE

--

III

1.0

PEC MIN DI3T4

10

IG

III ill

'

r=^^----

- V,= IOV
1

SPECM UC 0I3T4 -

O.I

Ol

SPEC MIH DI3T3

"

MAX DI3T3

s*

''

SPEC

~T[T

- PEAK CURRENT
ASA FUNCTION

~?

* V S/ R

IM1LLIAMPS1

vs Gate "on state" Current

10,000

THOUSANDS)

vs Gate Source Impedance

1

VS

-^

Rg

IOk

RG

100k

10

VOLTS

"---^RG* MEG
1

10

-75
-25

50

25

vs Temperature and

-50

-25

25
50
AMBIENT TEMPERATURE-C

75
I,

AMBIENT TEMPERATURE-C
Ip

=-

vs Temperature and R G

RG

20

-75

-25

25

50

V-VOLTAGE-VOLTS

75

AMBIENT TEMPERATURE-C

Peak Output Voltage

VT vs Temperature and R,

1070

Silicon

Transistor
D16G6

The General Electric D16G6 is an NPN silicon planar epitaxial passivated transistor
designed specifically for high frequency applications. The unit is suitable for use as
a UHF television tuner oscillator.

absolute

maximum

ratings:

(25C)

(unless otherwise specified)

Voltages

Collector to base
Emitter to base
Collector to emitter

VcBO
Vebo
VcEO

30
3
12

V
V
V

Io

25

mA

200
120

mW
mW

Current

Collector (steady state) *

Dissipation

Total
Total

Power
Power

(free air
(free air

@ 25 C amb.) **
@ 55 C amb.)

Pt
Pt

BOTE

1: Lead diameter is controlled in the

zone between 070 and .250 from the seal-

ing plane.

max. of

Between .250 and end

021

is

of lead a

held.

500
MIN

Temperature

Storage temperature
Soldering temperature
10 sec. Xt Xi" from case
Operating junction temperature
*

Derate 2.67

55 to +125
260

stg

Tj

SEATING

PLANE

C
C

100

mW/C for ambient above 25C.

electrical characteristics:

(25^)

(unless otherwise specified)

Max

Units

IcBO

0.5

^.A

Iebo

0.5

/*A

Static

breakdown voltage (I
Collector-emitter breakdown voltage
Emitter-base

Min

Symbol

(V C b = 30 V, I E = 0)
Emitter cutoff current (V E b = 3 V, I = 0)
Forward current transfer ratio (I = 5 mA, Vce = 10V)
Collector-base breakdown voltage (I B = 0, I = 100 /iA)

Collector cutoff current

20
30
3

Ufb

BVcbo
BVebo
BVcEO

= 0, IE = 100 /aA)
(I B = 0, I = 3 mA)

Typ

12

35

V
V
V

20

psec.

Dynamic
(Vce 10V, Io = 5 mA)
(Vce = 10V, I c = 5 mA)
Output capacitance (V CB = 10V, I E = 0, f = 1 MHz)
Oscillator output (V Cc = 38V, I c ~ 5 mA, f ~ 940 MHz)

500

Gain bandwidth product

fT

Collector base time constant

r bC e

C c bo

1.2

2.5

1.5

MHz
pF

mV

(See Figure 1)

i-C

1/4

"XSTUB

M*

I-

3.3
i

KA

s/VV
1/4

22

W
.001 (iF

kfl.

AM/W
1/2

7mT

+6

940 MHz

Oscillator Test Circuit

Figure

1071

Silicon

Transistor
D16P1

The General Electric D16P1 is a planar epitaxial passivated NPN silicon

Darlington monolithic amplifier. It is ideal for preamplifier input impedances
of several

megohms.

maximum

absolute

ratings:

(25C) (unless otherwise specified)

Voltages

Collector to emitter

V n ,
V,
v

18
12
18

Emitter to base

V KII0

12

Collector to base
Collector to emitter

V
V
V
V

DIMENSIONS WITHIN
JEDEC OUTLINE TO-98
NOTE

1: Lead diameter is controlled in the

zone between .070 and .250 from the seat-

ing plane.

Between .250 and end

ma*, of .021

is

of lead a

held.

Current

Collector (Pulsed)*

Ic

Collector (steady state)

1-

Base (steady state)

In

mA
mA
mA

500
200
20

ALL DIMEN. IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED

LEADS

017'
ul

+- 2
-,OOI

(NOTE

Dissipation

II

Total power
(free air

@25C)**

mW

400

Pt

Temperature

Lead y1(i "

65 to +150
-65 to +125

Ts

Storage
Operating

T.

YS2 " from case

maximum

for 10 seconds

=C
=C

TL

260

C
EQUIVALENT

* Pulse

Conditions

*Derate 4.0

300 ^sec. pulse width,

2%

mW/C for increase in ambient temperature between 25 and

electrical Characteristics:

CIRCUIT

duty cycle

125C

(25C) (unless otherwise specified)

STATIC CHARACTERISTICS
Min.

Typ.

Max.

Collector cutoff current

(Vcb = 18V,
(V CB = 18V,

IE

IE

=
=

0)
0,

100
20

nA

1('I>

Ikho

100

nA

l('IH)

T A = 100C)

Emitter cutoff current

(V BB = 12V)
1072

D16P1

electrical Characteristics:

25C

(unless otherwise specified) (cont'd)

Min.

Collector emitter

breakdown voltage

= 10 mA,

(I

I],

Forward current transfer

(Ic
(I

Max.

Typ.

V ( K

0)

12

)ci-:o

ratio

= 2 mA, Vcv. = 5V)

= 100 mA, V n = 5V)

2,000

hi-K
h,.- E

6,000

Collector emitter saturation voltage

(I c

= 200 mA,

I,,

0.2

mA)

VcKiXATlf

1.4

mA)

Vm-^sATit

1.6

1.5

Base emitter saturation voltage

(I

,
(

= 200 mA,

Ik

0.2

Base emitter drive voltage

(I c

= 200 mA,

V CB .=

5V)

I1K t

DYNAMIC CHARACTERISTICS
Forward current transfer
(Ic

mA,

Forward current transfer

(Ic

ratio

V CE =

5V,

kHz)

2,000

hr,

ratio

mA, Vce =

5V, f = 20

MHz)

|h,|

Output capacitance

(V =

10V,

MHz)

C,

7.6

C,.

10.5

10

pF

Input capacitance

(V BI! = 0.5V,
f Pulsed

MHz)

Measurement Pulse width

:

pF

^ 300 ^sec, Duty cycle ^2%

I
4

.6

I c COLLECTOR

6 8

10

CURRENT (mA)

1073

20

40 60

100

200

400

1000

SbiQ

Silicon

D29E1

D33D21

D29E2

D33D22

D29E1J1

D33D21J1

D29E2J1

D33D22J1

Transistors

The

PNP

Q25i^&1521

NPN

D29E1, 2 series and the

D33D21, 22 series are silicon, planar, passivated, epitaxial transistors intended for general purpose applications. These complementary pairs are especially suited for
the
output stage of push-pull audio amplifiers, the drive stage of power amplifiers, or
for control and television
circuitry.

FEATURES:
Range

NOTE:

Low
Collector Saturation Voltage
Heatsinking Available on All Units

Excellent Beta Linearity Over a

Wide Current

Observe proper polarity on biases for PNP's and NPN's.

absolute

maximum

ratings:

(25 C

unless otherwise specified)

Voltages
Collector to Emitter
Emitter to Base
Collector to Base
Collector to Emitter

VcEO
Vebo
Vcbo

25
5

35
35

VcBS

Volts
Volts
Volts
Volts

Current
Collector (Continuous)
Collector (Pulsed, 300 /isec.
pulse width, - 2% duty cycle)
Dissipation

Total Power

750

Io

1000

IcM

mA
mA
hiH

Free Air,

T A =S25C)*
Total Power with Jl Heatsink
(Free Air, T A -25C)**
Total Power with Jl Heatsink
(Case Temp., Tc - 25C) ***
Temperature
Storage

500

Pt

700

Pt

1000

-65
-65

TsTO
Tj

Operating

Pt

Lead soldering (Vie"

from case for 10 sec. max.)

to
to

mW
mW
mW

+150
+150

C
C

+ 260

.070 and .250 Iran tt*

.500

-Li

SEATING

-S

"llP~is

*Derate 4.0 mW/C increase in ambient temperature above 25C. **Derate 5.6 mW/C increase
in ambient temperature above 25C.
***Derate 8.0 mW/C increase in case temperature above 25C.

electrical characteristics:
NOTE:

(25C

unless otherwise specified)

Characteristics apply to both heatsinked and non-heatsinked devices.

STATIC CHARACTERISTICS
Collector Cutoff Current

Min.

(v CE = 25V)

Ices
Ices

(Vce = 25V, T A = 100C)

Forward Current Transfer Ratio

= 2 mA, Vce = 2V)

D29E1/D33D21
D29E2/D33D22
(Ic = 500 mA, Vce = 2V)
D29E1/D33D21
D29E2/D33D22

Max.
100
15

nA
aA

(Ic

Collector Emitter
(Ic
(Ic

=
=

60
150

iIfe
iIfb

**
**

IIfe

45
60

V(BR)CEO
V<BR)CES

25
35

iIfe

Breakdown Voltage

10 mA)
10 M A)

Breakdown Voltage
= 10 nA)

Emitter Base
(Ie

200
500

(B

Volts
Volts
Volts

Collector Saturation Voltage

(Ic = 500 mA, I B = 50
Base Saturation Voltage
do = 500 mA, I B = 50

mA)

Vr

0.75

Volts

mA)

V BK(SA

1.2

Volts

DYNAMIC CHARACTERISTICS
Output Capacitance, Common Base
(Vcb = 10V, f = 1MHz)
Input Capacitance, Common Base
(Veb = 0.5V, f = 1MHz)
Gain Bandwidth Product
(Ic = 50 mA, Vce = 2V, f

20

Co

MHz)

D29E1/D33D21
D29E2/D33D22
**Pulse Conditions: Pulse width

100
135

f.
f

<

300/is

Duty cycle < 2%

1074

15

pF

55

pF

MHz
MHz

D29E2

D33D21
D33D22

D29E1J1

D33D21J1

D29E2J1

D33D22J1

D29E1
TYPICAL h FB VS.

Ic

V .2V
CE
I

D29EI
D33

25* C

"

~*~~

x<JT^-

'

*>

25C

2VC

I -COLLECTOR
C

CURRENT-mA

FIGURE

["

400

FIGURE 2

1075

Silicon

ijjpbziS ISO 1^3 129

Transistors

PNP

The

D29E4-7

D33D24-27

D29E4J1-7J1

D33D24J1-27J1

NPN

D29E4-7 series and the

D33D24-27 series are silicon, planar, passivated, epitaxial transintended for general purpose applications. These complementary pairs are especially suited for the
drive stage in high power amplifiers, and for control and television circuitry.
FEATURES: Low Collector Saturation Voltage Excellent Beta Linearity Over A Wide Current
Range Heatsinking Available On All Units
istor

NOTE:

Observe proper polarity on biases for PNP's and

absolute

maximum

ratings:

NPN's

(25C) (unless otherwise specified)

Voltage
Collector to Emitter

40

Emitter to Base
Collector to Base
Collector to Emitter
Current
Collector (Continuous)
Collector (Pulsed, 300 ^sec.
pulse width,
2% duty cycle)

Vbbo

VcBS

50
50

Volts
Volts
Volts
Volts

750

Ic

mA

1000

IcM

Dissipation

JEOEC OUTLINE

TO-M

J0 J
riasi
I

Total Power (Free Air,

Mil

T A ^25C)*
Total Power with Jl Heatsink
(Free Air, Ta
25C)**
Total Power with Jl Heatsink
(Case Temp., Tc 2= 25C) ***

<

Temperature
Storage
Operating

Lead soldering (Viq" %"

from case for 10 sec. max.)

Pt

500

Pt

700

Pt

1000

TsTG

-65

T,

-65

to
to

mW
mW
mW

+150
+150

C
c

+ 260

1:

Lud itametw o antra*

g Km. BetHM 250 ad *t

mm

.Kl

ALL OMEN.

it

hrit

nnn

MCHCS AND

Yn

H
SLEAC

h-

"Li

*T ?S

TL

a a

H OSOID09
MO MAX.

|a

*Derate 4.0 mW/C increase in ambient temperature above 25C. **Derate 5.6 mW/C increase
in ambient temperature above 25C.
***Derate 8.0 mW/C increase in case temperature above 25(

electrical characteristics: ,(25C)

NOTE: Characteristics apply
STATIC CHARACTERISTICS
Collector Cutoff Current

to both heatsinked

(unless otherwise specified)

Min.

= 25V)
= 25V,
T A = 100C)
CE

Forward Current Transfer Ratio

(Ic = 2 mA, Vce = 2V)

(Ic

500

D29E4/D33D24
D29E5/D33D25
D29E6/D33D26
D29E7/D33D27

mA, Vce = 2V)

D29E4/D33D24
D29E5/D33D25
D29E6/D33D26
D29E7/D33D27
Collector Emitter Breakdown Voltage
(Ic = 10 mA)
(Ic = 10 /*A)
Emitter Base Breakdown Voltage

I CES

100

nA

I CES

15

/j.A

500

mA,

50
Base Saturation Voltage
(Ie = 500 mA, l = 50
IB

hpE
hpE
hpE

60
100
150

IIfe

200

**hr

**h F
**v,
n

** i.

120
200
300
500

20
25
25
25

V (BR)CEO

40

V(BR)CES

50

Volts
Volts

mA)

0.75

Volts

mA)

1.2

Volts

(Ie = 10 ^A)
Collector Saturation Voltage
(Ic

M NOCS
UNLESS'
IEATSIN

and non-heatsinked devices

(Vce

V<BR)EBO

DYNAMIC CHARACTERISTICS
Output Capacitance, Common Base
(Vcb = 10V, f = 1MHz)
Input Capacitance, Common Base
(V EB = 0.5V, f = 1 MHz)
Gain Bandwidth Product
(Ic = 50 mA, Vce = 2V,

Ccb

= 20 MHz)
D29E4/D33D24
D29E5/D33D25

ft
f.

D29E6/D33D26
D29E7/D33D27

ff
ff

Volts

15

pF

55

pF

MHz
MHz
MHz
MHz

**Pulse Conditions: Pulse width

<

300/Lls

Duty cycle < 2%

1076

80
120
135
150

AM)

Al

TYPICAL h rE VS.

Ic

Q29CS033D23

"

D29E4-7

D33D24-27

D29E4J1-7J1

D33D24J1-27J1

J_

D29E4
D3302

I25*C

"^

I25'C

"^v
125'C

^-

--"

\\

T25'C

^ "^

"

23* C

25* C

p^

_ .

^"

~"~

"

'Ts-c

\^
N.

\
X'is

23'C

^^
s

'N
I-COLLECTOR CURRENT-mA

I -COLLECTOR CURRENT-mA

FIGURE

FIGURE 2

700

600

_M

D29E6
D33D26

D29E7
D33D27

<

I25*C

I2S*C
I23*C

25'l

400

23'C

as'c^^

""

^
s

\\
\\

jX^25'C

I--C0LLECTOR CURRENT-mA

I-COLLECTOR CURRENT-mA

FIGURE 4

FIGURE 3

V CE (sat)

TYPICAL
1

D29E 4
0330 24

VS.

Ic,

lc/20
1

=
1

D29E5
0330 Z3

I25*C

^^
X

*'

TV

I25*C

25C

^
J^
/

y*f

sZ

*^*-~-23*C

25*C

i^=_

2 3*C

-1

<" J

b-123* C

>X

v4

y.
^^
*-

23*C

(25 C

125 "C

125 C

25"C

I
1

12

I_-C0LLECTOR CURRENT-wA

-COLLECTOR CURRENT-mA

FIGURE 6

FIGURE 5
1077

D29E4-7

D33D24-27

D29E4J1-7J1

D33D24J1-27J1

VCE

TYPICAL

SA T) VS.

Ic ,

10

III

o /20

(continued)

MM

till

D29E6

029E7

_T^

IZS'C

25- C

//

4
'h

25'C-^ r

"

A/

/A J'
I25"C
-

=4.
12!

^>

25"C

-i

^-^^f"'
^"J

^J'

*>>

23" C

125 c

-25"

Z5*C

2 5"C

I25"C
I

I. -COLLECTOR CURRENT-mA

I--COLLECTOR CURRENT-mA

FIGURE 7

FIGURE 8

TYPICAL
u

VCB( SAT)

VS.

c,

III

III
III

D29E4

/10

D29E5

J
^
<*
25"<
IZ

V.

5'C-

5 u

I25"C

^^

125 C

7^

0.1

<'

-?**

-U S"C

2 5"C

2^C__

'"^
125" C

125 c

01

I c -COLLECTOR CURRENT-mA

I. -COLLECTOR

FIGURE 9

CURRENT-mA

FIGURE 10

x:

a*

^-^
29 "C

|l25'C

^
^

D29E6
D33D 26

D29E7
D33D

Mi

-^

s sr

-r/

<,'

*>

I25C

25"C
125

25 C

"??
~&ft

~/\T> !5*C
-t.

-,#

^
r> * ,t

U
>

25"(

12! "C

>B
Ic

-COLLECTOR CURRENT-mA

FIGURE

i-^

25"C

25"C

o.ooi

001
I

11

-C0LLECT0R CURRENT-mA

FIGURE 12

1078

~z5 ^^25"C ^25C

TYPICAL

V BE

VS.

D29E4-7

D33D24-27

D29E4J1-7J1

D33D24J1-27J1

Ic

1.2

D29E

D29E4 -

1.0

/A

D33D24

--

"

25C
r " |"_

033D

^'y> /

^ ',

'z r

^^

^jd

,^--

-__

'

'

25C
1

IZ5*C __

UJ

\l

\-^
125 C

25C

=*

00

10

30

I -COLLECTOR CURRENT-mA

I.-COLLECT0R CURRENT-mA

FIGURE 14

FIGURE 13

1.2
1.2

1
1

</>

_L_L

D29E6
033D.C

t-0

//
^ // A

^-\

-^ ~

>
8

"

>

^^J

25* C

X
125

<

029E7
033D2 7

-^t
//

'/'

2VC__

^j:

25"C
^

I25'C

.4
'
.
,

V"
>

125'

I -COLLECTOR CURRENT-mA

125 C

-COLLECTOR CURRENT-mA

FIGURE 16

FIGURE 15

1079

Silicon

=hi2iS i^si^Sbsi

Transistors

D29E9-10

D33D29-30

D29E9JM0J1

D33D29J1-30J1

[Other D33DSerieson Pages 1074 -1Q7f.

The

PNP

NPN

D29E9-10 series and the

D33D29-30 series are silicon,
planar, passivated, epitaxial transistors intended for general purpose applications. These complementary pairs are especially suited for the drive stage
in high power amplifiers, and for control and television circuitry.
FEATURES:
Low Collector Saturation Voltage Excellent Beta Linearity
over a Wide Current Range Heatsinking Available on All Units
NOTE: Observe proper polarity on biases for PNP's and NPN's.

absolute

maximum

ratings:

(25C) (unless otherwise speeded)

Voltages

V CEO
V EBO

Collector to Emitter
to Base
Collector to Base
Collector to Emitter

Emmitter

60

Volts
Volts
Volts
Volts

VcBO

70
70

VCES

Current
Collector (Continuous)
Collector (Pulsed, 300 fisec,
pulse width,
duty cycle)
Dissipation

-2%

JEOEC OUTLINE T0-9B

mA _
MR

750

Io

IcM

_. A

1000

1: Lud dumetet is controlled m Hi

tan Between .070 Ml .no Iran tic Mi
m{ pttne. Between IX mt eni el tat
mm. of .021 held.

HBH
t

..I

1 w

ALL UMEH. M NCHES AND IRE

REFERENCE UNLESS TOLERANCED

Total Power (Free Air,

Ta-25C)*

Pt

Total Power with Jl Heatsink

(Free Air, T 4 - 25C) **
Total Power with Jl Heatsink
(Case Temp., To - 25C) ***

Temperature
Storage
Operating

mW
mW
mW

500

Pt

700

Pt

1000

H h
SL

to
to

+150
+150

Hi

NOTE:

C
C

Collector Cutoff Current (Vcb

(Vcb = 25V, T A = 100C)

Forward Current Transfer Ratio

Mm.

Max.

100
15

hpn

60

hlFE

LOO

120
200

nFB
npB

20
25

\T

V(BR)CE8

60
70

V<BR)EBO

Ices

= 2 mA, Vob = 2V)

D29E9/D33D29
D29E10/D33D30
do = 500 mA, Vob = 2V)
D29E9/D33D29
D29E10/D33D30

nA
^A

(Io

Collector Emitter

Breakdown Voltage

do =

**

10 mA)
10 mA)
Emitter Base Breakdown Voltage
(Ib = 10 M-)
Collector Saturation Voltage
(Io = 500 mA, I B = 50 mA)
Base Saturation Voltage
do = 500 mA, Ib = 50 mA)
(Io

V BE(SAT)

DYNAMIC CHARACTERISTICS
Output Capacitance, Common Base
(Vob = 10V,f = 1MHz)
Input Capacitance, Common Base
(VEB = 0.5V, f = 1 MHz)
Gain Bandwidth Product
(Io = 50 mA, Vce = 2V,

20

Ccb
Ceb

MHz)

D29E9/D33D29
D29E10/D33D30
**Pulse Conditions: Pulse width

V CE(SAT)

80
20

ft
ft

<

300/Js

Duty cycle

<2%

1080

V-

Volts
Volts

Volts

0.75

Volts

1.2

Volts

15

pF

55

PF

-g

0501005
520 MAX.

ALL MMCN. IN MCHES AND U

REFERENCE UNLESS TOLENANC

(25C) (unless otherwise specified)

= 25V)

Characteristics apply to both heatsinked and non-heatsinked devices.

STATIC CHARACTERISTICS

TOP

.300 WIN.

Lead soldering CA,e" Vsi'

from case for 10 sec. max.)
TL
+260
C
*Derate 4.0 mW/C increase in ambient temperature above 25C. "Derate 5.6 mW/C increase
in ambient temperature above 25C.
***Derate 8.0 mW/C increase in case temperature above 25C.

electrical characteristics:

-65
-65

Tstq
T,

m
\

a-

MHz
MHz

TYPICAL h FE VS,

D29E9-10

D33D29-30

D29E9J1-10J1

D33D29J1-30J1

350

TYPICAL
2

50

~T^

03 3D29

-12 5C

12 S'C

'

^^

25* C

-
uj

1\

D29E9
*""

1^

-H-

.-*

__j

25*C

""""

1000

too

10

"IT --'"

__

Z5*_C__

1-

~"~

-J

ft

I_- COLLECTOR

^^

25^__

50

S'

._-

25'C

lc

"

VS.

BE

CURRENT - mA

Ic

1000

100

-io

-COLLECTOR CURRENT-

033 D 30

I25cJ^

i^-'

-^
i

>

"

12

/?

>.

/
/

D29EIO

25C

_-

*~"~

""

U
1

--- "

y?

*~

25 C
I25*C

\n

"
----

__

, --

^y

"''^*-^*'

-H

125' C.

\
I c -COLLECTOR

CURRENT-mA

I.-COLLECTOR CURRENT-mA

TYPICAL Vce(SAT) VS.

l,

= lc/20

l,

D29E9

12

,0

c-

J/

,J
'

DZ 9E9

at

J//^

s
6

VS.

= lc/10

*
i

V CE(SAT)

TYPICAL

IZS'C

25 c

'

'

0I

izs*c

jj

"

Z3*C

"

a^y"

.-

as't^>

SS
zs'c

29*C

IT

8
CURRENT- mA

COLLECTOR CUHflENT-mA

f<

/'/

0Z9EK

i
OS 9E 10
DUE zo

f
t,

*?A 'A
'

Z3 C-\

T3*C-

"

'

>)

\
c~

'?,

'

*,

^ /V
tt

.^- itS^/
*'

a
IZ5*C

1
>

^1

,^*

:==

- Zi c

""

-- s^- ''~\,

,.-

It -COLLECTOR CUMtENT-

1081

,-^

Silicon

Transistors

D38H1-9
The General

38H

Electric

series are

high current, high voltage

Silicon Planar Transistors ideally suited for switching

applications requiring both high voltage and

and saturation

absolute

characteristics.

maximum

NPN

and amplifier

good high current gain

These are compliments to the D39J

series.

ratings: (TA = 25C unless otherwise specified)

Voltages
Collector to Emitter

VCEO

Collector to Base

VcBO
Vebo

Emitter to Base

E -H

D38H

D38H

D38H

1.2,3

4.5,6

7,8,9

60
60
60

80

100

Volts

TO-92

80

100

Volts

MILLIMETERS
MIN.
MAX.

I.

2.

SYMBOL

Volts

Current
Collector

Ic

Collector (Peak Pulsed

Ic

lO^is

500
1000

mA
mA

<f>b

.4

*bZ

.4

*D

< 2% duty cycle)

2.41

TA <
Total Power Tc < 25C
Derate Factor T A > 25 C
Derate Factor T c >25C
25 C

.500

Pt

L2

Watts

80

3.1

I.I

Watts

4.0

mW/C

8.0

mWfC

.4

MIN.
I7 0j
.0

8 2

.0

4.1

.1

90

2.G7

10

.0

2 2

.01

75

.125
.09 5

12.700

2.6 3

.5

1.270

6.3 5

NOTES
1.3

.20 5

65

.1

5
55
.13 5 .170

4.32

3.4 3

MAXj
.2

50 1.395 .045

2.920

1.00

5.3 3
.5 5

INCHES

5.20

4.4 5

L|

Total Power

7
7

e
e1
J

Dissipation

4.3 2

3.

EMITTER
BASE
COLLECTOR
-1

00

.1

.0

- .0 5
250,
.1

2.670 .080

1,3

3
3
2

.10 5

NOTES
THREE LEADS
2. CONTOUR OF PACKAGE UNCONTROLLED OUTSIDI
1.

THIS SIDE.

Temperature

3.

+150
+150
+260

Operating

Tj

-65 to

Storage

Tstg

-65 to

Lead (1/16" 1/32" from

case for 10 sec.)

C
c
c

(THREE LEADS! tf>b2 APPLIES BETWEEN L| AND Lzfib APPLIES BETWEEN L2 AND 12.70 MM (.501
FROM THE SEATING PLANE. DIAMETER IS UN
CONTROLLED IN L. AND BEYOND I2.70MM1.5
FROM SEATING PLANE.

electrical characteristics: (TA = 25C unless otherwise specified)

SYMBOL

MIN.

MAX.

UNITS

D38H1,2,3
D38H4,5,6
D38H7,8,9

V(BR)CEO
V(BR)CEO
V(BR)CEO

60
80
100

Volts

D38H1,2,3
D38H4,5,6
D38H7,8,9

V(BR)CBO
V(BR)CBO
V(BR)CBO

60
80
100

V(BR)EBO

Volts

ICBO

nA

IcBO

25

nA

Iebo

25

nA

Static Characteristics

Collector-Emitter
(I c

mA, I B =

Collector-Base
(I c

Breakdown Voltage
0)

Volts
Volts

Breakdown Voltage

= 10 M A,

e = 0)

Volts
Volts
Volts

Emitter-Base Breakdown Voltage

(I E

= 10 mA,

Ic

= 0)

Collector Cutoff Current

(VCE = 50V,

VBE

= 0)

Collector Cutoff Current

(VCB = 50V, I E = 0)
Emitter-Base Reverse Current

(VEB = 3V, I c = 0)
Forward Current Transfer Ratio*

(VCE =1V, I c =

10

mA)

D38H1,4,7
D38H2,5,8
D38H3,6,9

hFE
hFE
hFE

1082

60

150

100

300
500

200

'

D38H1-9
SYMBOL

Static Characteristics (continued)

Forward Current Transfer Ratio* (continued)

D38H1,4,7
(VCE = IV, I c = 100 mA)
D38H2,5,8
D38H3,6,9
D38H1,4,7
(VCE = 5V, I c = 500 mA)
D38H2,5,8
D38H3,6,9

90

hFE
h FE
hFE
hFE
h FE

150

30
45
75

Collector-Emitter Saturation Voltage*

= 10 mA, I B = 1mA)
(I c = 100 mA, I B = 10 mA)
(I c = 500 mA, I B = 50 mA)

VcE(sat)

(I c

VcE(sat)

VcE(sat)

Base-Emitter Saturation Voltage*

V BE (sat)
V BE (sat)

= 100 mA, I B = 10 mA)

(I c = 500 mA, I B = 50 mA)

(I c

Dynamic

55

h-FE

UNITS

MAX.

MIN.

.050
.125
.250

Volts

.83

Volts

.95

Volts

Volts
Volts

Characteristics

Collector-Base Capacitance

(VCB = 10V, I E =

0, f

MHz)

-cb

12

pF

-eb

100

pF

Emitter-Base Capacitance

(VEB = .5V, Ic = 0, f = 1 MHz)

Gain Bandwidth Product
(VCE = 10V, I E = 30 mA, f = 50 MHz)
*Pulse width

< 300iusec.,

MHz

80

duty cycle sg 2%.

10

._.

8i

fc!

"'

llllllll

VCE' IV

N
<

10 xi B

vc

>

o
2
t-

E^

5JL-

>

1.0

**

-55C
111

IV
z
UJ

&

iu
_i

a.

{ff^

I25C

id
HI
li_

.01

10
I

IC

C -COLLECTOR CURRENT-mA

100

-COLLECTOR CURRENT -mt

COLLECTOR EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT

FORWARD CURRENT TRANSFER RATIO NORMALIZED

TO 10mA VALUE VS COLLECTOR CURRENT
z

o
S

4J03C H

a.

<
K
Ul
tt-

>'''

"

3
uj

>

::r^

?
ta|t-..6

"""vbe

BASE EMITTER VOLTAGE (Vce = 1V)

AND BASE EMITTER SATURATION

VOLTAGE (lc= 10 x 1B)

VS COLLECTOR CURRENT

VBEISATljS,

>?

jsc

O
>

z
w

.4

"

Jbeis

*> 5 C

.2

v>

m
i

*
l

c -COLLECTOR

CURRENT-mA

1083

Silicon

Sesi

nsi^Sigi

Transistors

D39C1-6

D38L1-6
Complementary Darlington

The General

Electric

D38L1-6 and D39C1-6

are Silicon Planar, Epi-

NPN-PNP complimentary Darlington amplifiers. These devices

designed for medium current-amplifier and switching applications.

taxial,

are

ausoiuie

maximum r aungs

Voltages
Collector to Emitter

VcEO
VCBO
Vebo

Collector to Base

Emitter to Base

(T A = 25C unless otherwise specified)

Parts 1-3

Parts 4-6

40
40

25
25
14

14

r*-o-

SEATING PLANE

TO-92

Volts
SYMBOL

Volts

Current

*b

Collector

Ic

Collector (Peak, Pulsed 10

< 2%

jus

Ic

500
1000

mA
mA

*t>2

*D

duty cycle)

Dissipation

T A < 25C
Total Power T c < 25C
Derate Factor T A > 25C
Derate Factor T c > 25C
Total Power

PT
PT

.5

1.0

4.0
8.0

5.3 3

7
.40 7

.4

.5
.4

5200

4.190

COLLECTOR

MIN. MAX.
.17
.0
.0

L2

6.3 5

2.0

.1

12.700

Ll

1,3

75

.20 5
.12 5 .16 5
.09 5
5
.1

O 2.67
I.I 50
1.395 .045 .055
3.4 3
4.32
.13 5 .170
2.41

NOTES

.210
6 .022
6 .01 9

3.1

1.270

2.920

mW/C
mW/C

5
8 2

4.4 5

3.

INCHES

e
1
1

Watts

.500

.2 50
.1

30 2.670 .080

.05

',3

3
3
2

.10 5

NOTES:
1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTS

Temperature
Operating

Tj

Storage

Tstg
TL

Lead (1/16" + 1/32" from

case for 10 sec.)

electrical characteristics:

+150
-65 to +150
+260
-65 to

THIS SIDE.
3.(THREE LEADS) *b2 APPLIES BETWEEN L| AND L
*b APPLIES BETWEEN L2 AND 12.70 MM (.!

C
C

FROM THE SEATING PLANE. DIAMETER IS

CONTROLLED IN L, AND BEYOND I2.70MM
FROM SEATING PLANE.

(t a = 25c unless otherwise specified)

SYMBOL

MIN.

MAX.

UNITS

V( B R)CEO

40,25

Volts

V(BR)EBO

14

Volts

Static Characteristics

Collector-Emitter

Watts

4.3 2

EMITTER
BASE

MILLIMETERS
MIN.
MAX.

2.

I.

Volts

Breakdown Voltage*

(I c = 10 mA, I B =0)
Emitter-Base Breakdown Voltage

= 100 m A, Ic = 0)
Collector Cutoff Current
(VCB = 40V, I E = 0)
(VCB = 25V, I E = 0)

Parts 1-3, 4-6

(I E

(VCB = 40V, I E =
(VCB = 25V, I E =

0,
0,

T A = 100 C)
TA = 100C)

Parts 1-3

ICBO
ICBO
ICBO
ICBO

Parts 4-6

Parts 1-3
Parts 4-6

100

nA

20

MA

100

nA

Emitter-Base Reverse Current

(VEB = 8V, I c = 0)
Forward Current Transfer Ratio*
(VCE = 5V, I c =2mA)
(VCE = 5V, I c =2mA)
(VCE = 5V, I c = 2mA)
(VCE = 5V, I c = 500 mA)
(Vce = 5V, I c = 500 mA)
(VCE = 5V, I c = 500 mA)
(VCE = 5V, I c = 500 mA)
(VCe = 5V,Ic = 500 mA)
(VCE = 5V,I C = 500 mA)

EBO

D38L1,4D39C1,4

hFE

D38L2,5 D39C2.5
D38L3,6 D39C3.6
D38L1,4
D38L2.5
D38L3.6
D39C1,4
D39C2,5
D39C3.6

hFE
hFE
hFE
hFE
hFE
h FE
hFE

1084

hFE

2000
7000
50000
4000
12500
87000
1600
5600
40000

20000
70000

_
_
_

D38L1-6, D39C1-6

SYMBOL

Static Characteristics (continued)

MIN.

MAX.

UNITS

Collector-Emitter Saturation Voltage*

(I c
(I c

= 500 mA,
= 500 mA,

B =

.5

B =

.5

mA)
mA)

D38L1-6
D39C1-6

'CE(sat)

1.5

Volts

^CE(sat)

1.75

Volts

D38L1-6
D39C1-6

VBE(sat)
VBE(sat)

1.75

Volts

1.9

Volts

Base-Emitter Saturation Voltage*

(I c

(Ic

= 500 mA, I B =
= 500 mA, I B =

Dynamic

.5
.5

mA)
mA)

Characteristics

Collector-Base Capacitance

(VCE = 10V, I E =

0, f

MHz)

PF

Ccb

Emitter-Base Capacitance

(VEB = .5V, I c = 0, f = 1 MHz)

Gain Bandwidth Product
(VCE = 10V, I c 30 mA, f = 20 MHz)
*Pulsed Conditions:

Pulse width

< 300 ^s,

15

Ceb

80

fT

Duty Cycle

pF

MHz

< 2%.

100000
8
b

55

100 c
1

kJ

u.

Hill

TYPICAL D39C
VCE -5V

IT
25

Z
<

55C

"

=3

"

'

-FORWARD

5
8
6

uj
=

4
2

100
100

10

1.0
I

c -COLLECTOR

CURRENT -mA

FORWARD CURRENT TRANSFER RATIO

VS COLLECTOR CURRENT
10

i
[

6
UJ

z
o

"

-55C

25C

-iooo x t B
c
TYPICAL 039C

OOC

s
a
J
V

6
4

UJ

.01

1.0

10

IOO

[{.-COLLECTOR CURRENT- m

COLLECTOR EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT
1085

D38L1-6, D39C1-6

>

z
o
EC

TYPICAL

D39C
w

in

I6

4
1

7!SC

VBE 'SAT

TfiT

<o

>

IQQC

"BE jSWI

.0
I

c -COLLECTOR CURRENT

-itlA

BASE EMITTER VOLTAGE (Vqe = 5V) AND BASE EMITTER

IB) VS COLLECTOR CURRENT

SATURATION VOLTAGE (IC= 1000 x

- :

looc

25C,..

- 55C

ICAL D38L
VCE .5V

IO

I.O
I

c -COLLECTOR CURRENT

IOO

-mi

FORWARD CURRENT TRANSFER RATIO

NORMALIZED TO 2mA 5V VALUE
VS COLLECTOR CURRENT

I
1086

D38L1-6, D39C1-6

100

k
*

8
6

II

rPICAL

D38L
4

UJ

5
o

z
'

8
6

>

?
q:

Ul
DC

a
j
s
V

i
8
6

25C
I00C

UJ

r -COLLECTOR CURRENT- m

COLLECTOR EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT c = B X1000
l

TYPICAL

D38L

I.8

I.6

>

ISAT)
-55C VBE

1.4

IIM'

tr

UJ

'-2

?^^r
Mil
JLU-

111

uj

25C

(.0

V BE

E ISAT)

!<;

COLLECTOR CURRENT -iA

5V AND BASE EMITTER SATURATION

X 1000 VS COLLECTOR CURRENT

BASE EMITTER VOLTAGE V CE

VOLTAGE

IC = IB

I
1087

Silicon

Transistors

P38S1-10
The General

Electric

D38S1-10

series are

NPN

silicon, planar, epitaxial, transistors.

They

feature super

high gain and low collector saturation voltage as well as a low noise figure. They are ideal for low
level

low noise amplifier and battery operated applications and output

stages of operational

amplifiers.

maximum

absolute

ratings:

Voltages

(t a = 25c unless otherwise specified)

D38S

D38S

D38S

1,2,3,4

5,6,7

8,9,10

TO-92
SYMBOL

Collector to Emitter
Collector to Base
Emitter to Base

*CBO

30
30

45
45

60
60

Vebo

Vceo

Volts
Volts
Volts

A
f>b
<j>b2
<f>D

Current
Collector
Collector (peak, pulsed
10/iS < 2% duty cycle)

Ic
Ic

mA
mA

100
200

PT

.400

m\V/C

4.0

case for

1.

+125
65 to +150
+260

C
C
c

-65 to
i

1 stg.

TL

sec.)

80
50

I.I

3.4 3

.5
.4

4.1

.0

32

12.700

.0

2.67
1.39 5
4.

MIN.
.17

8 2

90

.1

L2
Q

2.920

2.0 3

6.3 5

MAX.
10

NOTES

.2

6
6

.0
.0

22
9
1

1.3

75 .205

.12 5 .16 5
.09 5
5
.1

4 5 .0 5 5
.13 5 .170

.0
.5

1.270

COLLECTOR

INCHES

5.20

EMITTER
BASE

3.

.2
.1

00
-

.05

50
1

2.670 .080

1,3

3
3
2

.10 5

NOTES:

Temperature
Operating
Storage
Lead (1/16" 1/32" from

.4

2.41

Watts

7
7

.4

5.3 3

4.4 5
3.1

Li

Total Power T A < 25C

Derate Factor T A > 25C

4.3 2

E
1

Dissipation

MILLIMETERS
MIN.
MAX.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIl

THIS SIDE.
3.

(THREE LEADS) #b2 APPLIES BETWEEN L| AND Lj

<t>b APPLIES BETWEEN L2 AND 12.70 MM
.5C
FROM THE SEATING PLANE. DIAMETER IS U
CONTROLLED IN L. AND BEYOND 12. 70 MM
FROM SEATING PLANE.
(

electrical characteristics:

(t a = 25c unless otherwise specified)

STATIC CHARACTERISTICS
Symbol
Collector-emitter
(I c

= 1mA, I B = 0)

Collector-base
(I c

breakdown voltage

breakdown voltage

= 10aiA,Ie=0)

Max.

Units

V(BR)CEO

30
45
60

Volts

D38S1, 2,3,4
D38S5,6,7
D38S8,9,10

V(BR)CBO

30
45
60

Volts

V(BR)EBO

Volts

Emitter-base breakdown voltage

(I E

Min.

D38S1, 2,3,4
D38S5,6,7
D38S8,9,10

= K*/A,I c = 0)

Collector cutoff current

(V CE = 25V,

VE

Emitter-base reverse current

(V EB = 3V, I c =

25

nA

25

nA

o)

EBO

0)

Forward current transfer ratio

(V CE =5V,I c = .lmA)

D38S1,5,9
D38S2,6,10
D38S3.7

D38S4
D38S8

1088

h FE
h FE
h FE
h FE
h FE

400
600
1000
1500
250

800
1200
2000

3000
500

D38S1-10
STATIC CHARACTERISTICS Cont'd

Symbol

Collector-emitter saturation voltage

(I c

Units

'CE(SAT)

.100

Volts

V BE(SAT)

.78

Volts

= 10mA, I B =.5mA)

Base-emitter saturation voltage

(I c

Max.

Min.

= 10mA, I B = 1mA)

DYNAMIC CHARACTERISTICS
Collector-base capacitance

pf

(V CB = 5V,I E =0,f=lMHz)
1

-41

--D38 SI

:iJD38 32

S5
S9

S6

-IJD38 sir

VC E=5V

<

125C

JVce-5 V
I25C

- 25C

"MM

=^

25C.

'.^SK~

-55C -

55C
"

IC

-COLLECTOR CURRENT-mA

IC

FORWARD CURRENT TRANSFER RATIO

VS COLLECTOR CURRENT C
(l

FORWARD CURRENT TRANSFER RATIO

VS COLLECTOR CURRENT (Ic)

(hpE>

>

S4

D38 S3
S7

"

-COLLECTOR CURRENT

(hpE>

I25C

\j

I25C

25C

-5! C

25C
<

1000

3
I

01

.01

.1
l

10

10

r -COLLECTOR CURRENT-

IC

FORWARD CURRENT TRANSFER RATIO

VS COLLECTOR CURRENT (\q)

"COLLECTOR CURRENT -mA

FORWARD CURRENT TRANSFER RATIO

VS COLLECTOR CURRENT (lc>

(hpE>

(hpE>

8
:

D38 Sft

38S
38S

V i5 V
CE

<

I25C

"
fi

25C

r
p <

3s

J3

_..

B'lO

iii"

j :::

TT

lC"

FORWARD CURRENT TRANSFER RATIO

VS COLLECTOR CURRENT C
(l

25 C

8-10

I25C

111
II

-COLLECTOR CURRENT-

e-io

5C

--'

IHI

B-IO -55C
1

III

COLLECTOR CURRENT -mA

COLLECTOR EMITTER SATURATION VOLTAGE

(VCE(SAT)) VS COLLECTOR CURRENT (\q)

(hpE>

1089

D38S1-10
D38S2

D38S2
4

o
1

<
3

S'rf

tS

Si
a.

IZ5C

B-IO,

25C

<

B-IO

B 100

am

.iiinir

B-IO -5SC

MM

B-IO

IC-COLLECTOT CURRENT -mA

COLLECTOR EMITTER SATURATION VOLTAGE

(VCE(SAT)) VS COLLECTOR CURRENT (l C

-55C

C -COLLECTOR CURRENT -mA

COLLECTOR EMITTER SATURATION VOLTAGE

(VCE(SAT)) VS COLLECTOR CURRENT (Iq)

10

6
ttt

D38S4^

ttttl
1

ttt

(A

se

z
O

te

ul

e^
o >

4tt

TIT

6
4

5^

1!

15
as

-J

BIOO
8

B=IOO
1

29C

25C

L*S-'i

[|ff)
B-IO

5C

tZSg.

w.lO
2

B'lO-"^^^
i

JOI

inin

iilll
.c Ol

.01

COLLECTOR EMITTER SATURATION VOLTAGE

(VcE(SAT)) VS COLLECTOR CURRENT (l C

I0<

10

-COLLECTOR CURRENT

IC-COLLECTOR CURRENT -mA

mA

COLLECTOR EMITTER SATURATION VOLTAGE

(VCE(SAT)) VS COLLECTOR CURRENT (l C

~T

l
|

-i~

D38S
TYPICAL

D38SI.E
D38S5.6
D38S8.9.

1.0

..

'

it

>tE-

/'

10

T A <25

5V

f-IKHi

n
II
Til

i e
z
o

is

'

-55C VB E|SAT)"0

/it

Vc.-

^
a

>C Vhfujatj e-)Q

Tll VBE,\E-V

*|
* S

ft?, i

129 C Vgg BAT]

OO/iA

C-M Cyi

10

'C-COLLECTOR CURRENT -mA

10

100

Rg-SOURCE RESISTANCE-K

BASE EMITTER VOLTAGE V B E AND

BASE EMITTER SATURATION VOLTAGE (V BE SAT ))
VS COLLECTOR CURRENT lc

NOISE FIGURE (NF)

VS SOURCE RESISTANCE

1090

(R g )

1000

D38S1-10
D38S3.4
0383!
T,.25C

/
f-IKHz

'\

tc- 0/i A
Ic'IOOyuA

k SOCyt A-'^V

..
Rg

-SOURCE RESISTANCE -K/v

NOISE FIGURE (NF) VS SOURCE RESISTANCE (R g

D38S5, 6
D38S8, 9,10
TA.25C
M; E .5V

-500/1 A, R

IK/V

IC 'VO/iA, Rs-'OK/l

""
1

I!

!lll

IC-KyiA.Rs-WOK/V
II
II

f-FREQUENCY-KHi

NOISE FIGURE (NF) VS FREQUENCY

(f)

mD38S7
D38S3,4

23C
VCE -5V

*\.

-,

C "5 M/i A, RS'IO

c

c -IO/aA,R S

.|OOK/V-

= l

-IOO/iA. R.-IOOKJ\

TT

f- FREQUENCY- KHi

NOISE FIGURE (NF) VS FREQUENCY

1091

(f)

'

Silicon

Transistors

P38V1,2,3

High Voltage

The General

Electric

D38V1,2,3

are silicon

NPN

planar epitaxial transistors designed for

high voltage switching and amplifier applications.

absolute

maximum

Voltages

ratings:
D38V1

V rF o
V CBO
Vebo

Collector to Emitter
Collector to Base
Emitter to Base

Current
Collector

(t a = 25c unless otherwise specified)

D38V2

SEATING PLANE

D38V3

200
200

250
250

300
300

Volts
Volts
Volts

SYMBOL
A

*b
100

Ic

100

100

fa

mA

+0

Dissipation

Total Power T A < 25C

Total Power T c < 25C
Derate Factor T A < 25C
Derate Factor T c < 25C

PT

Pt

500
1000

m Watts
m Watts

mW/C
mW/C

E
e

ei
l

L
L|

Temperature

LZ

Operating
TJ
Storage
Tstg.
Lead (1/16" 1/32" from T|_
case for 10 sec)

-65 to +150
-65 to +150

+260

C
C
C

MILLIMETERS
MIN.
MAX.

2.

EMITTER
BASE

3.

COLLECTOR

I.

TO-92

INCHES
MIN. MAX.

NOTES

.210
407 55 .0 6 .02?
.4
7
.4 8 2 .0
6 .01 9
4.4 5
5200 75 .205
3.1 80 4.1 9
.12 5
65
2.41
2.67
.09 5 .105
I.I 50
1.395 .045 .055
3.430 4.3 2
.13 5 .170

12.700
.5 00
4.3 2

5.3 3

.17
1

1.3

.1

.1

1.270

6.350
2.920
2.0

.2

- .050
50
5

30 2.670 .080

.10

.1

1.3

3
3
2

NOTES:
I.

THREE LEADS

2.CONT0UR OF PACKAGE UNCONTROLLED OUTSI

THIS SIDE.
3.(THREE LEADS) *b2 APPLIES BETWEEN L ( AND L;
*b APPLIES BETWEEN Lz AND I2.70MM (.51
FROM THE SEATING PLANE. DIAMETER IS U

electrical characteristics:
STATIC CHARACTERISTICS

(I

c=

Collector-base
(I

breakdown voltage

mA, I B =

D38V2
MAX.

D38V1

SYMBOL

MIN.
Collector-emitter

CONTROLLED IN L. AND BEYOND I2.70MMI

FROM SEATING PLANE.

(T A = 25C unless otherwise specified)

MAX.

D38V3
MAX.

MIN.

MIN.

UNITS

V (BR)CEO

200

250

300

Volts

V (BR)CBO

200

250

300

Volts

0)

breakdown voltage

C =100/UA, I E =

0)

Emitter-base breakdown voltage

(I E = lOOjUA, i
c = 0)

V (BR)EBO

Collector cutoff current

tCBO

50

50

50

nA

CBO

10

10

10

|UA

EBO

50

50

50

nA

(V CB = 100V, I E =

Volts

0)

Collector cutoff current

(V CB =100V, I E =0, T A =125C)

Emitter-base reverse current

(V EB =3V,I C =

0)

Forward Current transfer ratio

(V CE = 10V, I c = 10mA)
(V CE = 10V, I c =20mA)
(V CE = 10V, I c = 50mA)

"fe
"FE
h FE

45

50
50

35

40
40

25

30
30

Collector-emitter saturation voltage

(I

c = 40mA, I B = 4mA)

V CE(sat)

1.0

1.0

1.0

Volts

.85

Volts

Base-emitter saturation voltage

(I

c = 20mA, I B = 2mA)

*V BE (sat)

.65

.85

.65

.85

.65

DYNAMIC CHARACTERISTICS
Collector-base capacitance
(V CB =10V, I E =0, f=lMHz)

Pf

Emitter-base capacitance

(V EB =.5V, I c =0, f=lMHz)

Turn-on Time
(V CC =150V, I c =20mA, I B1 =I B2 =2.75mA)
Turn-off

60

-eb

Gain bandwidth product

(V CE =10V, I c =20mA, f=20MHz)

50

'ON

60
50

60
50

pf

MHz
jUsec.

Time

(V cc =150V,I c =20mA, I B i=I B2 =2.75mA)

*Pulse Conditions: Pulse width

<

300^s, Duty Cycle

OFF

jusec.

< 2%

1092

,000^

i
1

)38VI, 2
v

ce

niB\/i#*"#**
o q

U3UV3

.,ov

****** *

VCE = 10 V

I25'C

_J

25*C

"V

JSiJ

100

I25*C

.._
|

c *\
--S

25'C

_-

-55*C

V
\

"

V"

\
V

c -C0LLECT0R

CURRENT-mA

c -COLLECTOR CURRENT

-mA

FORWARD CURRENT TRANSFER RATIO VS COLLECTOR CURRENT

+-- +

---i

(--

D38V;
i

.i

/io

~H

"

/IO
B 'l c

j
1

Hj-

I.0

rlrri

-,

"

_L-L

T1

'-

IZS'C

ZS'C

/^

IZS'C

|
UJ

23*C

^>

^'

-35*C

o
=

V_

"

Ic

-COLLECTOR CURRENT -mA

IC"C0LLECT0R CURRENT -ml

COLLECTOR EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT

D38V

D38V
-~ic"

'"'-

f'IMHl

.8

^s 6
.7
llll

"

-^~hi"t^ ^'
7

.4

2 5' c

.3

.2

".

IC-COLLECTOR CURRENT-mA

V-VOLTAGE -VOLTS

COLLECTOR BASE AND EMITTER BASE

CAPACITANCE VS REVERSE VOLTAGE

BASE EMITTER VOLTAGE VS

COLLECTOR CURRENT
D5ev
6

TJ

t-

ZOMHi

!3'C

-.01

!p>

^^

\ s

4
I-

-10

>

Vj

80MM1

-4^i
MJL

4
zt
\

"-.

UUtt

V -^

[
1

CONTOURS OF CONSTANT GAIN BANDWIDTH PRODUCT

1093

Silicon

Transistors

The General

Electric

D38W7-D38W14

are

NPN,

D38W7-14

silicon, planar, epitaxial transistors

designed for low noise, high gain amplifier applications.

FEATURES
Low noise figure < 2db
High voltage rating, 80V

absolute

maximum

High forward current transfer ratio

Low

saturation voltage

ratings:

(t a = 25c unless otherwise specified)

Voltages
Collector to Emitter

D38W
12-14

80
100

VcEO
Vcbo

Collector to Base

D38W
7-10

V EB o

Emitter to Base

100
120

Volts
SYMBOL

Volts

A
fb

Volts

mA

100

Ic

Dissipation

T A < 25C
Factor T A > 25C

Total Power

Derate

Pt

.400

Watts

-65 to +125

Storage

-65 to

*stg.

Lead (1/16" 1/32" from

case for 10 sec.)

electrical .characteristics:

= 1mA, I B

breakdown voltage
= 0)

Co Hector- base breakdown

(I c =10mA,I e =0)

voltage

C
C
C

+150
+260

.0

90
670
395
4.3 2

1. 270
4.

50

3.4 3

12.700

1.

6.3 5

2.920

.0
.1

NOTES

02 2

9
75 .205
1

.01

Symbol

D38W7, 8, 9, 10
D38W12, 13, 14

V(BR)CEO

D38W7, 8, 9, 10
D38W12, 13, 14

V(BR)CBO

= l<*zA,I c = 0)

.1

.500

.2 50
.1

.05

1,3

3
3

.10 5

1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED 0U1

THIS SIDE.

3JTHREE LEADS)*b2 APPLIES BETWEEN L) ANC

$b APPLIES BETWEEN L2 AND 12.70 MM
FROM THE SEATING PLANE. DIAMETER I!
CONTROLLED IN L. AND BEYOND 12. 70 Ml
FROM SEATING PLANE.
I

Min.

Max.

Units

80

Volts

100

Volts

100
120

Volts

Volts

Volts

V(BR)EBO

Collector Cutoff Current

(V CE

.12 5 .16 5
.09 5 .10 5
4 5 .0 5 5
3 5 .170

Emitter-base breakdown voltage

(I E

1.3

.0

2.670 .080

2.0 3

MAX.
.210

(t a = 25c unless otherwise specified)

STATIC CHARACTERISTICS
(Ic

48

INCHES

NOTES

Operating

Collector-emitter

80

.5

5200

4.4 5

I.I

Temperature

40
2.4

5.3 3

7
7

.4

3.

L2

mW/ c

4.0

MIN.

<-l

COLLECTOR

.17

BASE

3.

320

e1

2.

MILLIMETERS
MAX.

MIN.

fa

Current
Collector

EMITTER

I.

T0-92

=40V,V BE =0)

^ces

50

nA

D38W7, 8, 9, 10
D38W12, 13, 14

Icbo
Icbo

100
100

nA
nA

Iebo

50

nA

D38W7, 12
D38W8, 13
D38W9, 14

h FE
h FE
h FE

Collector Cutoff Current

(V CB = 80V, I E = 0)
(V CB = 100V,I E = 0)
Emitter-base reverse current

(V EB = 3V,I C =

0)

Forward current transfer ratio

(V CE = 5V,I c = .lmA)

D38W10

h FE

1094

150
250

400
600

300
500
800
1200

STATIC CHARACTERISTICS
Forward current transfer

D38W7-14

Cont'd.

Symbol

Min.

h FE
h FE
h FE
h FE

150
250
400
600

Ma>(.

Units

ratio

(V CE = 5V,I c = lmA)

D38W7, 12
D38W8, 13
D38W9, 14

D38W10
Collector-emitter saturation voltage
(I c

= 10mA,

IB

= 1mA)

V CE(sat)

0.10

Volts

V BE(sat)

0.78

Volts

CC b

4.0

Pf

Ceb

18

Pf

Base-emitter saturation voltage

(I c

= 10mA, I B = 1mA)

DYNAMIC CHARACTERISTICS
Collector-base capacitance

(V CB = 5V,I E = 0,f=lMHz)
Emitter-base capacitance

(V EB =

.5V,

Ic

= 0,f=lMHz)

Gain Bandwidth product

(V CE = 5V, I c = 1mA, f = 20 MHz)

ft

Forward current transfer

hf

ratio

(V CE = 5V, I c = 1mA,

75

11.5

200

MHz

20

= 20 MHz)

Noise figure

= 100/uA, V CE = 5V, R g = lOKft,

=
f
10Hz to 10 KHz, B.W.= 15.7 KHz)

(I E

D38W8,9,10,13,14

NF

D38W8, 13
D38W9, 14
D38W8.9, 13, 14
D38W8,9, 13,14
D32W8, 13
D38W9, 14

hie

35

hie

10

50

hre

10

30
1000
1600

dB

HYBRID PARAMETERS
(I c

= 1mA,

V CE

= 5V,

= lKHz)

Input Resistance

Voltage feedback ratio

Output Conductance
Forward Current Transfer Ratio

8
6
4

-h

inn

hoe

250
400

hfe

hfe

Kohms
Kohms
XI 0-4
u-mhos

typical d38w
hfe

vs collector current
I25'C

...i!&*
1

8
6
-

-55*C

"

4
2

01

Ic -

COLLECTOR CURRENT -mA

FORWARD CURRENT TRANSFER RATIO NORMALIZED

TO .1mA VALUE VS COLLECTOR CURRENT

1095

D38W7-14
1.

D38W
YP1CAL BASE EMITTER ON
VOLTAGE CHARACTERISTICS

nB- 10
-55C

o
>

.^.isa!^:
^5*0 "Bt

i- 6

CS B=

= P = :l

-'

.^ -

U-

..
"

l?

||

^k^

^0
5t

-.--

? s

c -COLLECTOR

CURRENT -mA

BASE EMITTER VOLTAGE AND BASE EMITTER SATURATION

VOLTAGE VS COLLECTOR CURRENT
e

D38W

'

TYPICAL
2
1
I

8
6
^
2

^V

s ..

2 SC

I25"C

B-t

30

.1

--*-

4
-55"C a

-i 3

ni

.001

.01

10

Ic

-COLLECTOR CURRENT- mA

COLLECTOR EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT

/
/

D38W
f

'IKHi

CE "3V0LTS
T..25"

'

-\'c'

O^i A

'c 5C

KW>iA

I
Rg- SOURCE RESISTANCE - K

Si*

NOISE FIGURE VS SOURCE RESISTANCE

1096

00

D38W7-14

D38W
VCE

*5V0LTS

TA* 25 ' C

<o

s
o
Ll

^Jc^SOO^uA R t . K
^*C''OQ*. ^ftflQ*
Kr
I
I

f-FREQUENCY-Hi

NOISE FIGURE VS FREQUENCY

D38W
I

c .|mA

TA

.25-C

IKHi

i
]

TYPICA
VCE

D38W
-

5V

TA -25'C
f - IKHz

>

ft*.

X
e
o

V\U
X

v;

!__ M.

i
t

(A

ft

"r.

<

rO"

m
X

4
Ir -

COLLECTOR CURRENT

20
8
10
12
14
16
IS
VCE - COLLECTOR EMITTER VOLTAGE - VOLTS
6

22

24

26

28

1KHz HYBRID PARAMETERS VS

1KHz HYBRID PARAMETERS VS

COLLECTOR VOLTAGE

COLLECTOR CURRENT

I
1097

Silicon

Transistors

D39J1-9

The General Electric D39J

series are

high current, high voltage

Silicon Planar Transistors ideally suited for switching

PNP

and amplifier

applications requiring both high voltage and good high current gain

and saturation

characteristics.

D38H

These are compliments to the

series.

absolute

maximum

ratings: (TA = 25C unless otherwise specified)

Voltages
Collector to Emitter

D39J

D39J

D39J

1.2,3

4,5,6

7,8,9

Collector to Base

VfJBO

60

80

100
100

Emitter to Base

Vebo

VcEO

80

60

2.

TO-92
SYMBOL

Volts

A
f>b

.4

fa

.4

Ic

Collector (Peak, pulsed

Ic

10/is<2%duty

500

1000

mA
mA

T A < 25C
T c <25C
Factor T A > 25 C
Factor T c > 25 C

Total Power
Total Power

Derate
Derate

2.41

PT
PT

Watts

.500

1.00
4.0
8.0

+150
to +150
+260

Operating

Ti

-65 to

Storage

Tstg
TL

-65

1.1

MIN.

MAX.

.17

.2

.4

8 2

5.20
4.1

90

12.700

L2

6.3 5

2.920

2.0 3

.0

.1

4 32

.1

.5

.2

022
.0

9
.20 5
1

1,3

.125 .16 5
.0

1.270

6
6

75

2.670 .09

50 1.395

3.4 3

.0

NOTES

10

.1

.10 5

45

.0

00
-

.05

55
3 5 .170

50
1

2.670 .080

1,3

3
3
2

.10 5

NOTES:

Watts

1.

mW/C
mW/C

Temperature

Lead (1/16" 1/32" from

3.1

L|

Dissipation

80

E
e
e1
J

cycle)

4.4 5

.5 5

EMITTER
BASE
COLLECTOR

INCHES

MAX.
5.3 3

Volts

Current
Collector

MILLIMETERS
MIN.
4,3 2

Volts

*D

3.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3.

(THREE LEADS) <f,bz APPLIES BETWEEN L AND L2.

0b APPLIES BETWEEN Lz AND 12.70 MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNt

CONTROLLED IN L, AND BEYOND I2.70MM150C

FROM SEATING PLANE.

C
c
c

case for 10 sec.)

electrical characteristics: (TA = 25C unless otherwise specified)

SYMBOL

MIN.

MAX.

D39J1,2,3
D39J4,5,6
D39J7,8,9

V(BR)CEO
V(BR)CEO
V(BR)CEO

60

80
100

D39J1,2,3
D39J4,5,6
D39J7,8,9

"(BR)CBO
^(BR)CBO
^(BR)CBO

60
80
100

Volts

'(BR)EBO

Volts

iCBO

25

nA

Iebo

25

nA

Static Characteristics

Collector-Emitter
(I c

mA,

Cotiector-Base
(I c

UNITS

Breakdown Voltage

B = 0)

Volts
Volts

Volts

Breakdown Voltage

= 10/iA,

IE

= 0)

Volts
Volts

Emitter-Base Breakdown Voltage

(I E

= 10 mA, Ic = 0)

Collector Cutoff Current

(VCB = 25V, I E = 0)
Emitter-Base Reverse Current

(VEB = 3V, I c = 0)
Forward Current Transfer Ratio*
(VCE = IV, I c = 10 mA)

*Pulsed width

< 300 Msec,

duty cycle

hFE
hFE
hFE

D39J1,4,7
D39J2,5,8
D39J3,6,9

< 2%.
1098

60

150

100

300
500

200

SYMBOL

Static Characteristics (continued)

Forward Current Transfer Ratio* (continued)

(VCE = IV, I c = 100 mA)
D39J1 ,4,7

hF E

D39J2 ,5,8
D39J3 ,6,9
D39J1 ,4,7
D39J2 ,5,8
D39J3 6,9

h FE
hFE
hF E
hF E
hFE

(VCE = SV, I c = 500 mA)

MAX.

MIN.

D39J1-9
UNtTS

50
80
150

20
30
75

Collector-Emitter Saturation Voltage*

= 10 mA, I B = 1mA)
= 100 mA, I B = 10 mA)
(I c = 500 mA, I B = 50 raA)

(I c

V,CE(sat)

.10

(I c

"CE(sat)

.260

^CE(sat)

.750

Volts
Volts
Volts

BE(sat)

8.50

Volts

BE(sat)

1.00

Volts

Base-Emitter Saturation Voltage*

(I c
(I c

= 100 mA,
= 500 mA,

Dynamic

= 10 mA)
B = 50 mA)

IB
I

Characteristics

Collector- Base Capacitance

(VCB = 10V, I E =

0, f

MHz)

Cc b

20

pF

Ceb

110

PF

Emitter-Base Capacitance

(VEB = .5V, I c = 0, f = 1 MHz)

Gain Bandwidth Product
(VCE = 10V, I E = 30 mA, f = 50 MHz)
*Pulse width < 300/isec, Duty Cycle < 2%
10

al

D39J

MHz

-4-

e
.

!i,

60

fT

.:

D39J

ic -i B X 10

TA-2 sc

y
25C

'

cc

Z5C

i.0

"

55C

UJ3
3

z>
*

11
I-?

i^25C

I
*
(E

I25C

r,

.01
.1

-COLLECTOR CURRENT-mA

10

1.0

IC

100

-COLLECTOR CURRENT-mA

COLLECTOR EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT

FORWARD CURRENT TRANSFER RATIO NORMALIZED

TO THE 10mA VALUE VS COLLECTOR CURRENT
''

D39J

<
a.

,T ,
VBE SAT)

-55C
.

BASE EMITTER VOLTAGE (V C E = IV)

AND BASE EMITTER SATURATION
VOLTAGE (l C = 10 x IB)
VS COLLECTOR CURRENT

<
BO

VBEISATJ^^

III

I25C

VBE^A Ji-n
1

<

>

<

m
>s
l

COLLECTOR CURRENT-mA

1099

power
device technology and

From the leader

innovator

packaging

in

in plastic
.

attachment
superior power and
temperature cycling
capability

Good

current gain

Fast switching speeds

Color coded for polarity
(NPN or PNP) and lead
configuration

General Electric's technology,

experience and quality
products can serve your
industrial application needs.

Our Power

Transistor Selector

Guide and factory personnel

are available for your inquiries.

Contact your local GE distributor or write to General

Electric Co., Electronics Park,

Bldg.

NY

GENERAL

7,

Box

49, Syracuse,

13201.

ELECTRIC
1100

Silicon

Power Tab

Monolithic Transistor

Very High Gain Darlington

D40C

"Color Molded"

h FE Min. -10,000 and 40,000

1.33 Watt Free-Air Power Dissipation at

Hard Solder

TA

50C

Mountdown

TYPICAL APPLICATIONS:
Driver

Audio Output

Regulator

Relay Substitute

Touch Switch

Oscillator

I.C.

Leads Can Be Formed

Pin Configuration

Capacitor Multiplier

maximum

absolute

Servo- Amplifier

Driver

Equiv. Circuit

Brown

ratings:

(25C unless otherwise specified)

D40CK
Voltages
Collector to Emitter
Emitter to Base
Collector to Emitter
Current! 2)
Collector (Continuous)
Collector (Peak)
(50% duty cycle, 25 msec, pulse
width)

Power Dissipation* 2
Tabat25C<3)
Tab at 70C

To A TO-5

V,CEO

V CES

'

D40C2
D40C3

D40C4
D40C5

D40C7
D40C8

30

40

50

13

13

13

30

40

50

0.5
1.0

.
-

Volts
Volts
Volts

Amps
Amps

.
.

Pt

Watts
Watts

6.25

Free Air at 50C

With Tab
Without Tab
Thermal Resistance* 3

Watts
Watts

20.

C/W

75.

c/w
c/w

1.33
'

Junction to Case
Junction to Ambient

Rfljc

R0JA

With Tab
Without Tab
Temperature* 3

-100.

>

Operating
Storage

-55 to +150
-55 to +150

TsTG

c
c

Lead Soldering,
1/16" 1/32" from case for
10 sec. max.

.+260.

NOTES:
(1) The last digit is a part number which designates a voltage grade and an h FE level.
(2) Please refer to the safe region of operation curves for more information.
(3)

Tab temperature

is

measured on center of

tab,

electrical Characteristics:

1/16" from

plastic

D40C1.4, 7
D40C2, 5, 8

D40C3

kHz)

a letter after this digit.

I
60 K

10K
1

by

Max.

Typ.

h FE

40
90
5 V, f

specified

(25C unless otherwise specified)

D40C1,4, 7
D40C2, 5, 8

D40C3
(I c = 20 mA, V CE =

is

body.

Min.

Forward Current Transfer Ratio

(I c = 200 mA, V CE = 5V)

Tab and lead forming

K
K

h fe
10
1101

20

90 K

K
K

Min

D40C

Typ.

Max.

Collector to Emitter Voltage

= 10

(I c

mA)

Vceo

D40C1.2, 3
D40C4, 5
D40C7, 8

30
40

Volts
Volts
Volts

50

Collector Saturation Voltage! 4

(I c = 500 mA, I
B = 0.5 mA)
Base Saturation Voltage! 4
(I c = 500 mA, I
B = 0.5 mA)
Collector Cutoff Current
>

^CE(SAT)

1.5

Volts

^BE(SAT)

2.0

Volts

0.5

20

HA
HA

0.1

liA

>

V CES ,T,=25C)
V CES ,Tj = 150C)

(V CE = Rated
(V CE = Rated

'CES

'cBO

Emitter Cutoff Current

(V EB = 13V)
Input Impedance
= 20 mA,

(I-c

V CE

'EBO
= 5V,

kHz)

Ohms

10

pF

75

MHz

100

nsec

350

nsec

800

nsec

500

50

h; a

Collector Capacitance

(V CB = 10V, f= 1 MHz)
Gain Bandwidth Product
(V CE = 5V, I c = 20 mA)
Switching Times
Delay Time and Rise Time
(I C = 1A,I
B1 = lmA)
Storage

-cbo

td

Time

= 1A, I B1 = I B2 = 1 mA)
Time
( I c = lA,I B1 =I B2 =l mA)
motc
NOTE:
(I c

Fall

(4) Pulsed measurement, 300/isec pulse width, duty cycle

BE

5 2%.

(SAT)

__
T^-ia-v,

-Ss>

Jr.

-Y.

15

--

>^

-1 -^P^

0C

^~

5'C
j

Tj=2!)C

l3 0C

'j

.,-

(SAT)

c' I B

I000

40
60 80 100
200
400
-COLLECTOR CURRENT- MILLIAMPERES

600 800 1000

5"C

\Jc"
-0.5

ANtPE RE

MPE RE

I C =0.25 AMPERE

.=0.1

1
i

AMP "RF

f-

I
40
60

80
600 1000
100
400
800
I B-BASE CURRENT-MICROAMPERES

1102

4000 8000
6000 10,000

IOOK
6 OK

N\

Tj= 150 C

40K

.1

800K
600K

80K

D40C
T =150 C
J

-^1

20 K

Tj= 25 C

si

IOK

IOOK

""

25C

-55C

80K
60K

8K
6K

4K
T
2K

-55 - C
1

PULSED MEASUREMENT
PULSE WIDTH 2 MILLISEC
DUTY CYCLE < 2 %
V =5 VOLTS
CE
D40CI,4,AND 7
.

IK

800
600

s^

T
IOK

^--T

8K
6K

PULSED MEASUREMENT

400

2%

DUTY CYCLE <

V =5 VOLTS

ZOO

D40C2,

100

10

40

60 100
80

200

TYPICAL h FE

800
600

PULSE WIDTH

400

<

AND

6
10
40
200
600 1000
80
400 800
4
8
20
60 100
X.-COLLECTOR CURRENT -MILLIAMPERES

400 800
600
I--C0LLECT0R CURRENT -MILLIAMPERES
20

vs.

300 u SEC _Z_.

2%

DUTY CYCLE
CE

200
]

T =I50C/

100

80
60
40

T=25"c/
/

20
10
,

4
2

>

J~~

5S

f
f

.8

/
1

4
.2

2.0

"BE BASE-TO-EMITTER VOLTAGE-VOLTS

TYPICAL INPUT CHARACTERISTICS

--

1-

JUNCTION TO AMBIENT
..

^"

mm

JUNCTION TO TAB

UJ

WITH TAB

mi

<
i

io

--+J

T
T
J

Q.

_l

<
^

VCE =20V
I c =200mA
1

Z
Q

IO" 6

10-2

TIME

IN

SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

1103

D40C

8
7
6
5

4
3

12
V BE

1.6

1.4

2.0

1.8

2.2

-BASE-TO-EMITTER VOLTAGE -VOLTS

456789

TYPICAL TRANSCONDUCTANCE
CHARACTERISTICS

TYPICAL C C BO

too
360

026
"oTT

520
480

515

-I=X45-

285

065

8T5

CHAMFER

7WT
420

PLANE
250
230

400

105

TYPE U
LEAP LABELS
1

_J
^

BASE

COLLECTOR

095
095
029
023 NOTE 2

190

TT5

NOTES
ALL DIM ARE
1

EMITTER

065

CHAMFER

SEATING

060
050

095

20

10

30

40 50

IN INCHES AND ARE REF

UNLESS TOLERANCEO
043-057 LEAD WIDTH WITHIN
100
OF BODY

TYPE U
FITS T0-5 PRINTED CIRCUIT

BOARD MOUNTING CONFIGURATION

DIMENSIONAL OUTLINES

1104

70
60

VCB -COLLECTOR-T0-BASE VOLTAGE -VOLTS

vs.

VOLTAGE

90
80 100

Power Tab

Transistors
"COLOR MOLDED"

D40D is a brown, silicone plastic encapsulated, power transistor designed

and general purpose applications, such as: output and driver stages of
amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and
switching regulators; low and high frequency inverters/ converters; and many others.
FEATURING:
High free-air power dissipation
NPN complement to D4 ID PNP
The General

Electric
for various specific

absolute

for NPN, black for PNP

collector saturation voltage (0.5V typ.

Brown

Low

Excellent linearity
Fast switching
Hard solder mount

maximum

ratings:

("

.0A

c)

Brown

down

(25C)

Leads Can Be Formed

To A TO-5 Pin Configuration

(unless otherwise specified)

D40D1
D40D2
D40D3

D40D10
D40D11

D40D4
D40D5

D40D7
D40D8

D40D13
D40D14

30

45

60

75

45

60

75

90

-"

Voltages

v CF.O
v l.BO

Collector to Emitter
Emitter to Base
Collector to Emitter

V CES

Volts
Volts
Volts

Current 2
Collector (Continuous)
Collector (Peak)

Amps
Amps

1.5

Power Dissipation
Tab at 25C
Tab at 70C
Free Air at 25 C
With Tab
Without Tab

P,

Free Air at 50

-6.25
-4

Watts
Watts

-"

1.67
1.25

Watts
Watts

With Tab
Without Tab

Thermal Resistance 3

Rojc
Roja

Junction to Case
Junction to Ambient
With Tab

-1.0

Watts
Watts

-20"

C/W

1.33

-75

C/W
c/w

-100

Without Tab

Temperature 3
Operating

Tj

Storage
Lead Soldering,

'I'STC,

1/16"

55 to
55 to

<
h

c
c
c

150
150

+260

1/32" from case for 10 sec max

NOTES:
1

2
3

last digit is a part number which designates a voltage grade and an hip level.
Please refer to the safe region of operation curves for more information.

The

Tab temperature

is

measured on center of

tab,

(25C)

(unless otherwise specified)

D40O1
D40D4
D40D7
D40D10
D40D13
Vlin.

f>FE

50

"FE

10

Max.
150

riFE

h FE

120
20

D40D14-

D40D3

Max.

360

Min.

Max.

Min.

Max.

290

120
10

360

10

VCEO
VCEO
VCEO
VCEO

30
45

Volts
Volts
Volts
Volts

14

V CE(SAT)
VCE(SAT)

0.5
1.0

Volts
Volts

mA)

VbE(SAT)

1.5

Volts

B
D40D1, 2,4,5

@
@

Min.

Max.

D40D4, 5
D40D7, 8
D40D10, 11,13, 14

D40D7,

D40ri'?

10mA)D40Dl,2,

8, 10, 11, 13,

Base Saturation Voltage

(I c = 500 mA, I B = 50

D40D5
D40D8
D40D11

Typ.

Collector Saturation Voltage

= 500 mA, I = 50 mA)
(I
c

specified by a letter after this digit.

Min.
Collector to Emitter Voltage
(I c

is

1/16" from plastic body

electrical characteristics

Forward Current Transfer Ratio

(V CE = 2 V, I c = 100 mA)
(V CE = 2 V, I c = 1 A)

lead forming

Tab and

60
75

|
1
1
1

1A. not specified for D40D13.

1A. not specified for D40D14.

1105

D40D

MAX.

TYP.

MIN.

Collector Cutoff Current

(V CE
(VCE
(V CE
(V CE

= Rated
= Rated
= Rated

= Rated

YCES
VCES

0.1

MA
mA
mA
ma

JEBO

0.1

mA

C CBO

pF

200

MH?

25

nsec

Tj = 150C)

V C eo.

CES
1

Vceo)

ICEO

Tj = 150C)

50

Emitter Cutoff Current

(V EB = 5 V)
Collector Capacitance

(V CB = 10V,f=

1MHz

Gain Bandwidth Product

(V CE = 10 V, I c = 20

mA)

fT

Switching Times
Delay Time and Rise Time
(I c = l A, I
B1 = 0.1 A)
Storage Time
(I C

Fall

td

tr

1A,I B1 =I B2 = 0.1A)

ts

200

nsec

1A,I B1 =I B2 = 0.1A)

tf

50

nsec

Time

(I C

TYPICAL SATURATION VOLTAGE CHARACTERISTICS

Ir

/lp.20

v^-

10

10

,1

2= .C

V' 5 )*C

J?

0.6

o
Tj

1
<

TT

VCE (SAT)
02

150'

V' 5 o-c

^
?vr
J

I--C0LLECT0R CURRENT

mA

c -

COLLECTOR CURRENT

MAXIMUM PERMISSIBLE DC POWER DISSIPATION

'

CES

MAXIMUM:D40D

10,11.13,14

MAXIMUM: D40D
MAXIMUM: 0400

20
40
30
50
60
70
80
CE - COLLECTOR TO EMITTER VOLTAGE -VOLTS

1106

90

100

2S'C

SAFE REGION OF OPERATION

D40D

8 10

40

20

MAXIMUM COLLECTOR TO EMITTER VOLTAGE

MAXIMUM COLLECTOR TO EMITTER VOLTAGE

60

80 100

VOLTS

VOLTS

TYPICAL H FE VS

lc

VcE .2V

fj-150'C
|

04002,5,8.11

vCE

zv

r, Z

5 *C

n4nni.4.7,Ki

'
1

Tj'25" C

--SS'C

j"
'

"

T ( -35*C

0!

02
,

Ic

I-- COLLECTOR CLRRENT-m

-COLLECTOR CURRENT-

MAXIMUM TRANSIENT THERMAL IMPEDANCE

10""*

TIME

IN

100

itf

SECONDS

1107

D40D

TYPICAL INPUT CHARACTERISTICS

TYPICAL V CER
-

CES

T,.

_^.

JD40D

10

...

Ic

3,14

=IOmA
1

-^

5
400 7,8

...:-

hr

CES

D40D4.5

VCES

VCEO

040 DI.2 ,3

R BE

"BASE TO EMITTER RESISTANCE -OHMS

TYPICAL TRAIMSCONDUCTANCE CHARACTERISTICS

r
i

VCE 2 V
D40DI.4

V CE =2V
D40D2,5,8,

7,10,13

'/

,14

/ /

/ /

'

I50C

T.

600
T,

-I50-C-

/
Tj

25C

600

'

25 C

I
1-

h,

300
1

/
;/

"1

,/

200

-,

^ Tj 55C

t^j/

BE- BAS E TO EM TTE

^/
>

100

'

02

VOLTAGE -vo TS

0.4

0.6

06

V BE -BASE TO EMITTER VOLTAGE - VOLTS

400
.360

026
019

.105

095

315

- I5

285

065
CHAMFER

IIP

.070

065
CHAMFER

IT
SEATING

PLANE
.250
.230

J1M

105

095

TYPE U
LEAD LABELS

EMITTER
2 BASE
3 COLLECTOR

J05_

029
023 NOTE

026

026

019

019

095
Z

NOTES
ALL DIM ARE
I

2.

IN INCHES AND ARE REF

UNLESS TOLERANCED
.043-. 057 LEAD WIDTH WITHIN
100
OF BODY

TYPE U
FITS TO-5 PRINTED CIRCUIT

BOARD MOUNTING CONFIGURATION

FOR OPTIONAL LEAD CONFIGURATIONS SEE SELECTOR GUIDE

1108

-55"C

Silicon

Power Tab

Transistors
"Color Molded"

Electric D40E is a brown, silicone plastic encapsulated, power transistor

designed for various specific and general purpose applications, such as: output and
driver stages of amplifiers operating at frequencies from DC to greater than 1.0
MHz; series, shunt and switching regulators; low and high frequency inverters/

The General

converters;

and many

others.

FEATURING:
power

High

NPN complement to D41E PNP

Brown

free-air

dissipation

for NPN, black for PNP

Low collector saturation voltage

Excellent linearity

Fast switching

Hard

absolute

solder

0.5V

typ.

(gj

1.0A

Brown
I

Leads Can Be Formed

c)

To A TO-5 Pin Configuration

mount down

maximum

ratings: (25C)( unless otherwise

specified)

Units

Emitter to Base
Collector to Emitter

VcES

80
5
90

60

30
5
40

VcEO
Vebo

Collector to Emitter

Current' 2

D40E7

D40E5

D40E1
aymDs

Voltages

70

Volts
Volts

Volts

'

Collector (Continuous)

0.5

Amps
Amps
Amps

5.12-

Watts
Watts

1c

Collector (Peak)

Base (Continuous)

Power Dissipation* 2 " 3

Tab at 25 C
Tab at 70C
Free Airat50C
With Tab
Without Tab

Ib
*

Pt

1.33-1.0

Thermal Resistance's)
Junction to Case (Tab)

C/W

15.6-

R ejc
R 9JA

Junction to Ambient

Watts
Watts

With Tab
Without Tab

c/w
c/w

75

-100

Temperature
Operating

+150
+150
+260

Tj

-55 to

Storage

TsTG

-55 to

Lead Soldering,
1/16" 1/32" from case

TL
for 10 sec

c
c
c

max

NOTES:
last digit is a part number which designates a voltage grade and an h FE level.
(2)Please refer to the safe region of operation curves for more information.
(3)Tab temperature is measured on center of tab, 1/16" from plastic body.

(l)The

1109

Tab and

lead forming

is

specified

by a

letter after this digit.

D40E

electrical characteristics:

(25C) (unless otherwise specified)

D40E5

D40E1
Forward Current Transfer Ratio
(V CE = 2V, I c =100mA)
(V CE

50

h FF

= 2V,Ic=lA)

10

Collector to Emitter Voltage

(I

Min.

Symbol

Symbol

=10mA)D40El

Min.

50

10

Min.

VcEO
VcEO
VcEO

D40E5
D40E7

Max.

D40E7
Max.

Typ.

30
60
80

Min.

Max.

50
10

Max.

Collector Saturation Voltage

(Ic=l-0A,I B = 0.1A)
D40E1,5, 7
Base Saturation Voltage
(Ic

Vce(sat)

1.0

Volts

= 1.0A,I B =0.1A)
D40E1,

5, 7)

Vbe(sat)

1.3

Ices

0.1

Iebo

0.1

Collector Cutoff Current

(V CE

= Rated V CES

Emitter Cutoff Current

(V EB = 5V)

Collector Capacitance

(V CB

= 10V,f =

MHz)

Ccbo

Gain Bandwidth Product

(V CE =10V, I c =100mA)

fT

230

130

Switching Times
Delay Time and Rise Time

= IA,I B I=0.1A)
Time
(Ic = IA,I b 1=Ib2 = 0.1A)
Fall Time
(I c =lA,I B l=lB2 = 0.1A)
(Ic

td

tr

Storage

4UU

ts

170

40

o.i

IC-AMPERES
Figure

VCE - VOLTS
1

TYPICAL SATURATION

VOLTAGE CHARACTERISTICS

Figure 2

MAXIMUM PERMISSIBLE DC POWER

1110

DISSIPATION

D40E

MAX. POWER DISSIPATION

'CASt - w ^

PE<

'

CURR ENT
1

\X\

MAX DC V\
CURRE >JTX>

PULSED OPERATION
DUTY CYCLE < 50<*.

500

T j=I50 C

^O.lms PULSE

"
1

IA

J=25C

Oms PULSE

10ms PULSE''
1

D.

T J = -5 5C

c-

^s^\ VSJ

100

V CE = ZV

<

O.IA

\l
*\l

II
v

^
^

c;t<)

-~--

iov

IV

\l

MAX. Vceo D40E

1

30

^V

'

100V

0.10

0.01

I r -AMPERES

Figure

Figure 3

TYPICAL H FE VS C

SAFE REGION OF OPERATION

100

10"'

10"'

TIME

IN

SECONDS

Figure 5

MAXIMUM TRANSIENT THERMAL IMPEDANCE

1111

D40E

VCE = V

900

800
Figure 6
700

TYPICAL TRANSCONDUCTANCE

CHARACTERISTICS

Of
o
E
1

II

ii

^1

500

o
H

I
[

400

300

200

/ /

100

0. 2

J /

0. 4

0.(5

0. 3

l.i?

"BE VOLTS

400
360

026

~5W

520

480

105

095

065

065

CHAMBER

CHAMFER

060
420 .050

250
230

400

L
.-

J25

026

019

95

029

-226
019

"TTri NOTE 2

NOTES
ALL DIM ARE

LEAD LABELS
1

EMITTER

BASE

COLLECTOR
MOUNTING TAB

(electrically

com mon

TYPE U

IN INCHES AND ARE REF

UNLESS TOLERANCED
043-057 LEAD WIDTH WITHIN
100
OF BODY
to

collector

1112

FITS TO-5 PRINTED CIRCUIT

BOARD MOUNTING CONFIGURATION

Silicon

Power Tab

Monolithic Transistor

D40K

Very High Gain Darlington Amplifier

"Color Molded"

Complement To D41

ISIPN

h FE Min.

10,000

1.67 Watt Free-Air Power Dissipation

TYPICAL APPLICATIONS:

Audio Output
Driver
Relay Substitute
Regulator
Oscillator
Touch Switch
Servo- Amplifier
I.C. Driver
Capacitor Multiplier

Equiv. Circuit

absolute

maximum

ratings:

(25C)

Leads Can Be Formed

To A TO-5 Pin Configuration

(unless otherwise specified)*

D40K2, 4

D40K1.3

50

Units
Volts

13
50

Volts
Volts

Symbol

Voltages

30
13
30

VckO
Vebo

Collector to Emitter

Emitter to Base
Collector to Emitter

V CES

Current^)
Collector (Continuous)

Amps
Amps

Ic

Collector (Peak)

(50% duty
Power

cycle, 25 msec. pulse width)

Dissipation' 2

Tabat25C<
Tab at 70C

Pt

:! >

Watts
Watts

10
6

Free Air at 25C

1.67
1.25

With Tab
Without Tab

Watts
Watts

Free Air at 50C

Thermal Resistance 3
Junction to Case
Junction to Ambient
<

Watts
Watts

12.5

C/W

>

Rojc

ReJA

With Tab
Without Tab
Temperature< 3
Operating
Storage

1.0

1.33

With Tab
Without Tab

C/W
c/w

75
100

>

Lead Soldering,
V16 " % 2 " from case for 10

-55 to + 150-55 to +150

Tj
TsTG
sec

max

c
c

+260

T\,

NOTES:
''The last digit is a part number which designates a voltage grade and an hvv, level.
'-'Please refer to the safe region of operation curves for more information.
,:il
Tab temperature is measured on center of tab, 'in" from plastic body.

1113

Tab and

lead forming

is

specified

by a letter after

this digit.

D40K
electrical characteristics:

(25C)

(unless otherwise specified)

D40K1.3
D40K2, 4
Min.

Forward Current Transfer Ratio

= 200 mA, Vce = 5V)

= 1.5A, V CE = 5V)
(I c = 1.0 A, VCE = 5V)

(Ic

Iife

10K

IK

(Io

IK
Min.

Max.

Typ.

Collector to Emitter Voltage

(Ic

10

mA) D40K1,3
D40K2,4

Vceo

Collector Saturation Voltaae< 4

(I c

(I c

= 1.0A,

1.5 A,

IB
I

=
=

Vce

1.5 A,

B =

(I c

1.0 A,

(Vce

=
=

Rated V CES Tj
Rated Vces, Tj
,

1.5

1.5

Volts
Volts

Vbk 'sati

=
=

25C)
150C)

Ices

IcBO

2.5

Volts
Volts

0.5

i*A

2.5

Collector Cutoff Current

(V CE

Volts

(sat,

3mA) D40K1 2
= 2mA) D40K3 ,4

(I c

Volts

50
>

3mA) D40K1,
2mA) D40K3,

B
Base Saturation voltage* 4

30

20

Emitter Cutoff Current

(V EB

13V)

L:no

0.1

i*A

Collector Capacitance

(Vcb

10V, f

MHz)

Ca.n

Gain Bandwidth Product

(Vce = 5V, Ic = 20 mA)

10

fT

pF

MHz

75

NOTE:
<

>Pulsed measurement, 300

fisec

pulse width, duty cycle

^2%.

Figure

TYPICAL SATURATION VOLTAGE

04

0.I

0.2

0.4

IC COLLECTOR CURRENT- AMPERES

1114

D40K

IOOK

Figure 2

TYPICAL h F

20K

vs.

PULSE WIDTH '2 MILLISEC.

DUTY CYCLE 2%
D40KI AND D40K2
VCE =5V
T = 25'C
1

.04

.08 .08

IC

.2

.1

.4

.6

.8

COLLECTOR CURRENT (AMPERES)

20

Figure 3

TYPICAL CCBO

vs.

VOLTAGE
3<
OL>

m<
QUO 4

10

20

40

VCB COLLECTOR-TO-BASE V0LTA6E-V0LTS

1115

D40K

DIMENSIONAL OUTLINES
I.
^~

.400
.360
.026

5?0

05

.170

JT
315

_ sza x45
,= .

.075

065
CHAMFER

.285

SEATING

PLANE

.060
.420

065
CHAMFE

6To

1_,
_

05

.250
.230

400

09!
TYPE U
LEAD LABELS

96

J05_

026

019

95
.029
-023 NOTE 2 -

019

120
\

NOTES
ALL DIM ARE IN INCHES AND ARE REF
UNLESS TOLERANCED
2 .043-057 LEAD WIDTH WITHIN
100
OF BODY

EMITTER
2 BASE
3. COLLECTOR
1

TYPICAL

026

.105

I.

.105 ^

380

TYPE U
FITS TO-5 PRINTED CIRCUIT

BOARD MOUNTING CONFIGURATION

INSULATING

INSULATING

KIT

MOUNTING
HEAT

NYLON
SHOULDER
WASHER MICA
1WASHER

SINK

NUT

MICA

WASHER

(.003 THICK)

LOCK

=T

WASHER

NYLON SHOULDER

WASHER
l
1

THE THERMAL RESISTANCE TAB

TO HEAT SINK WITH THE MICA WASHER
IS APPROXIMATELY 75 C/W WITHOUT
ANY THERMAL CONDUCTING COMPOUND
AND ABOUT 175 C/W WITH A THERMAL
CONDUCTING GREASE.

note:

THE ABOVE PARTS WILL BE AVAILABLE UPON

REQUEST AS A SEPARATE KIT AT AN ADDITIONAL
COST. KIT #I38B8I89PII

1116

Silicon

Power Tab Transistors

High Voltage Video

Output Transistor

The D40N

a silicone plastic encapsulated

is

power

transistor for

TV

video

Other TV and general applications include: (1) Drive

for the TV horizontal sweep tube;. (2) Audio output stage for portable TV
sets; (3) High-voltage transistor regulator; (4) Video display drivers for
oscilloscopes, electroluminescent displays and desk calculators; (5) High-

and color output

stages.

voltage general usage.

FEATURING:

POWER-GLAS

Low C CB

passivation

(2.0 pf typ.

Gain rated

@ V CB

= 20V)

Brown

at 3 collector currents

To

maximum

absolute

ratings:

(25C)

Silicone

Leads Can Be Formed

A TO-5 Pin Configuration

(unless otherwise specified)

D40IMKD

D40N3
D40N4

D40N2

D40N5

Voltages<2)(4)

Collector to Emitter

'CER
^EBO

Emitter to Base

250

300

375

Volts

Volts

Current
Collector (Continuous)

Ic

Power Dissipation
Tab at 25C<3>
Tab at 70C

Pt

0.1

Amps

6.25

Watts
Watts
Watts
Watts

4
1.33

Free Air at 50C

Free Air at 50C (Without Tab)

Thermal Resistance) 3

Junction to Case
Junction to Ambient

R0jc
R0JA

With Tab
Without Tab
Temperature* 3

20

C/W

75

C/W
C/W

100

Storage

'STG

Operating

Tj

-55 to
-55 to

Lead Soldering, 1/16" 1/32"

from case for 1 seconds max.

+150
+150

+260

NOTES:
(1)

The

last digit is a part

(2) Test conditions:

(3)

Ic =

number which designates

mA r be = 10 kl

l -

a voltage grade.

Tab and

lead forming

specified

is

by

a letter after this digit.

>

is measured on center of tab, 1/16" from plastic body.

measurement, 300 /isec pulse width, duty cycle <, 2%.

Tab temperature

(4) Pulsed

electrical characteristics:

(25C)

(unless otherwise specified)

D40N1
D40N3
Forward Current Ratio
(V CE = 10V, I c = 4mA)
(V CE = 10V, I c = 20mA)
(V CE = 10V,I c = 40mA)

h FE
h FE
h FE

Min.

Max.

Min.

20
30
20

90

20

1117

D40N2
D40N4

D40N5
Max.

Min.

30
60
30

18

15

15

D40IM

ELECTRICAL CHARACTERISTICS

(Continued)

Typ.

Min.

Max.

Collector to Emitter Voltage! 4 )

= 1.0 mA,
D40N1,2

Base to Emitter

(I CE

R=

kft)

Vc

D40N3, 4

250
300

D40N5

375

Volts

Volts

Volts

Collector Cutoff Current

(V CB = 300V, Tj = 25C) D40N3, 4,

(V CB = 250V, Tj = 25C) D40N1, 2
(V CB =250V,T J = 150C)

1CBO

10
10

0.1

0.1
5

/jlA

IdA
juA

Emitter Cutoff Current

(V EB = 5 V)

10

fiA

pF

Collector Capacitance

(V CB = 20V,I E =0,f=lMHz)
Gain Bandwidth Product

V CE
V CE

= 20 mA,
= 20 mA,

(I c

(I c

= 10V)
= 20V)

50
75

80
95

MHz
MHz

NOTE:
(4) Pulsed

measurement, 300

jUsec pulse

width, duty cycle

MAXIMUM PERMISSIBLE DC

TYPICAL H FE VS. c
I

POWER DISSIPATION

Mil

V CER- 300 VOLTS

ALLOWABLE POWER DISSIPATION

WITH-HEATSINK
(TC -REFERENCE TEMPERATURE)

L
(

A R P OWE R
ISSIPATION

REE

~1

TA -REFERENCE TEW PEF ATU

*E)

'

X>/>
>/
>

Z)

^
4
Ic

40
60
80
100
120
140
REFERENCE TEMPERATURE (Tc OR TA )-"C

1118

10

20

"COLLECTOR CURRENT-M

40

LLI AMPERES

60 80

100

MAXIMUM TRANSIENT THERMAL IMPEDANCE

D40N
1

1
1

VrED <300 VOLTS

JUNCTION-TO1

"T"i

JUNCTION-TO-TAB

TIME -SECONDS

JUNCTION CAPACITANCE

SAFE REGION OF OPERATION

VS.

REVERSE

VOLTAGE

BIAS
so
so

MAXIMUM DC POWER LIMITATION

-AT 70C TAB TEMPERATURE

in

25 MILLISEC PULSES'"
10 MiLLISEC
MILLIE

Tj

-25-

40

~~mMc-o

a
o

'

UJ
o
z

FORWARD BIASED OPERATION

DUTY CYCLE<50% TO < 70C

"0

1:

3
60

80

100

VCE -CQLLECTOR-TO-EMlTTER VOLTAGE-VOLTS

6610

40

20

60 60 IO0

REVERSE 6IAS VOLTAGE - VOLTS

SATURATION VOLTAGE
CHARACTERISTICS

INPUT CHARACTERISTICS

VCE-'C

'

Vi B

7
=

10

OLT!
,

0.9

j'+25C

'

>
i

0.8

55*0

O
>

/
J

UJ
13

<
0.7

25

Tj

g
X

LU

0.6

A-

v.z^t^

2 06 3

<r
lj

<

.'

I0 2

K>
I

^s

I0 5

10"

MICROAMPERES
B-BASE CURRENT-

40
I

1119

c-

COLLECTOR CURRENT-MILL AMPERES

I

60

80 100

CONTOURS OF CONSTANT GAIN

BANDWIDTH PRODUCT

D40IM

90 -Tj =25
80 -F =20
70

TYPICAL TRANSCONDUCTANCE
CHARACTERISTICS

60

S\S

50

no

**

8=

,9^.

100

C E

\0>'

'

'

30

90

^-

25
20

eo

'5

15

* 70
z

*j- 50

10

r~

(J

o
K
O

50

/
/

'Oo~

6
5

0
"

'

-5

30

^T
2-5
Tj

25 c

20

60--

^55
1.5

10

_
0.4

0.5

0.6

//

0.7

0.8

-BASE-TO-EMITTER VOLTAGE

20
30
40
60
80
VCE -C0LLECT0R-T0-EMITTER VOLTAGE VOLTS

0.9

10

VOLTS

DIMENSIONAL OUTLINES

05
095

026
~" "679

190
170

l_

075

065
CHAMFE

.rr,
t

250
230
I

Q26
019

-A
120

026
019

080

LEAD LABELS
1

EMITTER

BASE

COLLECTOR
MOUNTING TA

(electr

ALL DIM ARE IN INCHES AND ARE REF

UNLESS TOLERANCED
043-057 LEAD WIDTH WITHIN
00
1

corr

OF BODY
to

collector

1120

TYPE U
FITS TO-5 PRINTED CIRCUIT

BOARD MOUNTING CONFIGURATION

100

Power Tab

Transistor
The D40P

is a brown silicone encapsulated glass passivated power transistor

designed for various specific and general purpose applications such as: series,
shunt and switching regulators, high frequency invertors, and display tube and

TV

deflection circuitry.

FEATURING:
Brown

POWER-GLAS Passivation
High Free Air Power Dissipation
Hard Solder Mountdown
Fast Switching
Brown for NPN

maximum

absolute

ratings:

Voltages

V CEO
V EBO
V CBO

Collector to Emitter

Emitter to Base
Collector to Base

Leads can be formed to a TO-5

Pin Configuration.

(25 c unless otherwise specified)

D40P1

D40P3

D40P5

120

180

225

200

250

300

Volts
Volts
Volts

Current
0.5

Amp.

6.25
4.01.33

Watts
Watts
Watts
Watts

Collector (Continous)

Power Dissipation
Tab
Tab

at

25T

at

70C

Free Air at 50C:

Free Air at 50C (without tab)

1.0

Thermal Resistance
R0jc
R0JA

Junction to Case
Junction to Ambient
(with tab)
(without tab)

An

insulating hardware kit

20-

t/W

{mica washer, nylon shoulder

washer, and solder lug) is
available at an additional cost

75
100'

cw

upon

"C/W

request. Kit

#138B8189P1

1.

Dimensional Outlines

Temperature
-55
-55

Operating
Storage
Lead Soldering, 1/16" + 1/32"

From

case for 10 sec.

max.

T stg

Forward Current Transfer Ratio

(I
c = 80 mA, V CE = 10V)
(I
c = 2 mA, V CE = 10V)
Collector to Emitter Voltage
(I

c = 1.0 mA, I b =
D40P1

0)

to

+150+150-

c
c

+ 260-

T|_

electrical characteristics:

to

(25C unless otherwise specified)

Min.
40

hFE

Max.

20
v

CEO
Volts
Volts
Volts

120
180
225

D40P3
D40P5
Collector Cutoff Current
(Rated CEO )

Emitter Cutoff Current

(V EBO =7V)
Collector Saturation Voltage
(I c = 100 mA, I B = 10 mA)

Units

CBO

10

HA

'EBO

10

HA

V CE

(SAT)

Volt

Base Saturation Voltage

(I c = 100 mA, I B = 10 mA)

V BE

(SAT)

1.5

Volt

Gain Bandwidth Product

(I c = 80 mA, V CE = 10V)

fT

Storage Time
(I c (ON) = 80 mA, I B (ON) = 8 mA
I
B (OFF) = 8 mA)
Collector Capacitance
(Vr

10V,

MHz

50
2.5

ts

jUsec

Pf

0)

1121

D40P
1

V CE

=10V
I

Tj .

I50'C

:'

N,

10

'

I
T.

- i)

-^

-25'C

8
Tj

--55"C
6

!j

V BE(SAT)

Tl
n*r

2
o

>

150

i
<

25C

^_____
.08

CE(SAT)

40

20

<0

60 SO

100

200

AGO

600

I r -COLLECTOR CURRENT-MILLIAMPERES

.01

TYPICAL

h FE

vs.

j_
10

20

40

60 80 100

-COLLECTOR CURRENT-MILLIAMPERES

TYPICAL SATURATION
VOLTAGE CHARACTERISTICS
|

<*C c

EB

III

-1

CURRENT LIMIT

'

25"C

25'C

MCC

a
<

10

uj

70 C

85C

^CB

(I

.oi
E

/
J

'

55 c

I00C

2
2

z
=

<

S 2
U O

II'

2
So-

S SI
2

10

20

40

60

80 100

400

200

REVERSE B(AS VOLTAGE- VOLTS

V CE

TYPICAL JUNCTION CAPACITANCE

VS. REVERSE BIAS VOLTAGE

-COLLECTOR -EMITTER VOLTAGE- VOLTS

MAXIMUM PERMISSIBLE
DC POWER DISSIPATION

u SE C

400

PULSES

Op SEC
MAXIMUM DC POWER LIMITATION'
AT 70"C TAB TEMPERATURE
25 Ml L SE C

1
1

-IOOju S

JLSES^

:c

^V

\^"

MILLISEC
MILLISEC
100

CL

o
a
s
3
Z

CL

o
a
=>

2
5

i_l

<
3

80

>

60

FORWARD BIASED OPERATION

DUTY CYCLE = 50% T c < 70

Vl\

'

<

40
1

in

40
V

60

80 100

c -COLLECTOR -EMITTER VOLTAGE- VOLTS

SAFE REGION OF OPERATION

1122

Silicon

Power Tab

Transistors
"Color Molded"

The General

Electric

D41D

is

a black, silicone plastic encapsulated,

power

transistor designed

and general purpose applications, such as: output and driver stages of
amplifiers operating at frequencies from DC to greater than 1.0 mHz; series, shunt and switching
for various specific

regulators;

low and high frequency inverters/converters; and many

others.

FEATURING:

absolute

High

free-air

power

PNP complement

dissipation

to

D40D NPN
NPN

(previously

D28D)

Black for PNP, brown for

Low collector

saturation voltage (

0.5V

typ.

@ 1.0A

Black Silicone
Leads Can Be Formed
To A TO-5 Pin Configuration

Fast switching

Hard solder mount down

maximum

ratings:

(25C)

(unless otherwise specified)

D41D1' 1

D41D2

'

D41D14
D41D13
D41D10

D41D4
D41D5

D41D7
D41D8

-45

-60
- 5

-75

-60

-75

-90

D41D11

Volts
Volts
Volts

'

Collector (Continuous)
Collector (Peak)

Power Dissipation' 2

Tab
Tab

-30
- 5
-45

V C EO
Vebo
V C ES

Collector to Emitter
Emitter to Base
Collector to Emitter

Current* 2

c)

Excellent linearity

Amps
Amps

-1

ic

-1.5

'

Watts
Watts

6.25

Pt

25C
at 70C
at

- 4

Free Air at 25C

Watts
Watts

1.67

With Tab
Without Tab
Free Air at 50C
With Tab
Without Tab

-1.25-

Watts
Watts

-1.331.0

Thermal Resistance' 3 '

With Tab
Without Tab
Temperature' 3

C/W

75 -

C/W
C/W

20

R0jc
R0JA

Junction to Case
Junction to Ambient

100-

'

TsTG

Storage
Lead Soldering,

1/16" + 1/32" from case for 10 sec

max

TL

-55 to +150

+260

NOTES:
'The last digit is a part number which designates a voltage grade and an h F E
2 ' Please refer to the safe region of operation curves for more information.
O'Tab temperature is measured on center of tab, 1/16" from plastic body.

<

'

1123

level.

Tab and lead forming

is

specified

by a letter

after this digit.

electrical characteristics:

(25C)

(unless otherwise specified)

D41D10
D41D1
D41D4
D41D7

D41D

Forw /ard Current Transfer Ratio

(
(

V CE = -2V,I C = -100 mA)

V CE = -2V,I C =-1A)

h FE
h FE

D41D11
D41D5
D41D8

D41D2

DA

D41D13

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

Min.

50

150

120
20

360
-

120

360

50

150

120

10

10

Max.

Min.

Typ.

-30
-45
-60
-75

V CE (SAT)
V CE (SAT)

-0.5
-1.0

Volts
Volts

V BE (SAT)

-1.5

Volts

'CES

-0.1

MA
MA
MA
MA

Collector to Emitter Voltage

(I

=-10mA)

D41D1, 2
D41D4, 5
D41D7, 8
D41D10, 11,

13,

VCEO
V C EO
V C EO
V C EO

14

Volts
Volts
Volts
Volts

Collector Saturation Voltage

(I

c = -500 mA, I B = -50 mA)

D41D1, 2, 4, 5
D41D7, 8, 10, 11, 13, 14

Base Saturation Voltage

(I

c = -500 mA, I B = -50 mA)

Collector Cutoff Current

(V CE
(V CE
(V CE
(V CE

= Rated
= Rated
= Rated
= Rated

V CES
V CES T,
V CEO )
V CES> Tj
)
,

= 125C)

-1
-1

JcEO
= 125C)

-50

Emitter Cutoff Current

(V EB = -5V)

Iebo

CcBO

10

-0.1

MA

Collector Capitance

lmHz)

(V CB = -10V, f=

PF

Gain Bandwidth Product

(V CE = -10V,I c =

-20mA)

mHz

150

Switching Times (see Figs. 1 & 2)

Delay Time and Rise Time
(Ic=-1A,I B1 = -0.1A)
Storage Time
(I C =-1A, I
B1 = I B2 = -0.1A)

ts

75

Time
(I C = -1A, I
B1 = I B2 =-0.1A)

tf

40

td

50

tr

Fall

OSCILLOSCOPE DISPLAY OF INPUT

SWITCHING CIRCUIT TO MEASURE

SWITCHING TIMES

AND OUTPUT PULSE WAVEFORM IS

OF SWITCHING CI RCUIT SHOWN
IN

FIGURE

-i=

-vcc
it

CRT

TIME-*

LI

I0A
-I

^H-

INPUT PULSE

WAVEFORM

{50X1

"Ir

NANOSECONDS MAX
FALL TIME*

NANOSECONDS MAX

,=I

B2

=0.1

AMPS

AMPS

PULSE- lOn. SEC

P.R.T. = IOmSEC
CRT= TEKTRONIX CURRENT

-+
~T\

TIME

J-

-10%

TRANSFORMER

FIGURE

90%

~r-

1.0

RISE TIME*

-i

ktd *t r
ts-)
OUTPUT PULSE WAVEFORM

FIGURE

1124

h-tf

D41D

MAXIMUM PERMISSIBLE DC POWER DISSIPATION

7
I

25-C

FORWARD BIASED OPERATION

^v

*~f~~

i\

Tc

Tc

"

\ \lCK
V rr <,

50C

IL

Tc

70 ' C

r-V aA
rr MAX:D4ID7,8,9
MAX :D4ID4,5 7 N
\VcE S MAX OIO,y
I

<;

\l

l\

\l

3
J

Tc

lOO'C
I

IN
/

\l

Tc

-vj/''

I25'C

""v^
I

r^-

V CES MAX

D4IDI

.2^
i

-IO

-30

-20

-40

-50

-60

-70

-80

-90

-I00

V^- COLLECTOR TO EMITTER VOLTAGE -VOLTS

SAFE REGION OF OPERATION

I
-10
-|

-2

-4

-6 -8 HO

-20

-40 -60-80-100

MAXIMUM COLLECTOR TO EMITTER VOLTAGE

-a

-4

-6 -8

-10

-20

-40 -60-80-100

MAXIMUM COLLECTOR TO EMITTER VOLTAGE - VOLTS

VOLTS

1125

D41D

MAXIMUM TRANSIENT THERMAL IMPEDANCE

-JUNCTION TO AMBIENT

WITHOUT TAB

"

^-

"JUNCTION TO AMBIENT

WITH TAB

JUNCTION TO TAB

10

10-6

I0" 3

VCE

ZOV

Ic

200mA

10-2

TIME

IN

100

SECONDS

TYPICAL SATURATION VOLTAGE CHARACTERISTICS

-14
1

/T..in

VV

Tj

*+

CE

f
*Z

-08

>
1

'*>
VOLTAGE

Tj-I !5'C

-0.4

V/
7
s
^*4

/^
^
V

25"C

-06

20

tj

25*C

TURATION

T -150 c

23* C

-y

:e (SAT)

n
-i 0'

-IC)2

I-

l5

COLLECTOR CURRENT-mA

I c - COLLECTOR CURRENT-mA

1126

'

'

TYPICAL TRAIMSCONDUCTANCE CHARACTERISTICS

D41D
-1000

"

JT
-2V

CE

-2V

r E
D< 101. .T. 0,13
I

-800

Li
SO"C

Ni

150
J
f

-700
T

4J

25'C

25" C

55 C

\i
\

-600

-500

/
kj

v- 55" C

f\

\ 1

-400

\
-300

'

-ZOO

T_

-100

/
S //

'

-0.2
,

-0.6

-0.4

-0.8

-02

-1.0

;
,

/ /
'y

-0.4

-06

-1.0

-0.8

-1.2

-BASE TO EMMITTER VOLTAGE-VOLTS

TYPICAL

h fe VS. Ic
400

!
1

,Tj-l2S"C

VCE--2V
D4IDZ.9

VCE
-UU

_ >V
Tj

125'

-ZV
1.4

ZS*C

Tj-55-C
too

IOO

80

'J

-35 *C

80
40

\
As

^s

^
I c -COLLECTOR CURRENT -

10

I c -COLLECTOR

400

V CE

'

- n*

- 0*

mA

.-2V
t uu

CURRENT- mA

VCE -2V

Tl
i

J- + 25'C

Tj'-SS-C
too

100

'J

-33'C

vV v
IO

0*

I.- COLLECTOR CURRENT -mA

I

c -C0LLECT0R CURRENT-

mA

1127

\
'

D41D
TYPICAL INPUT CHARACTERISTICS
-1.4
1

--2V

/V

TYPICAL V CER
T,

s
<

VCES

TJ' 25*C

ic- -10mA

-80 V
C ES-

-70

vCE0

^J

kJ

04107,8

V CES

UJ

o -K> V CES~

04104,5

g -40

o
^
O
a
>

-23*C

v<rn

-04

T
04101.2

VfFO

-30

-io
IC>*

IC

ir

R BE - BASE TO EMITTER RESISTANCE

irt

OHMS

BASE CURRENT- mA

DIMENSIONAL OUTLINES
400
.360

'

026
019

FT
.520
.480

105
.095

.315

.285

065
CHAMFER

IIP

065

.070

CHAMFER

IT
.420

060
050

400

_JL_
m
mo"LZ

.105

095

105

095

.029
~F^n

95

NOTE

190

z.

TYPICAL

0I9

"175"

notes:
i.

ffi|

all dim. are in inches and are ree

unless toleranced.
.043-057 lead width within 0.100
of body.

type u
lead labels
emitter
i.

a se
| s
r

3 collector
,

INSULATING KIT

INSULATING

MOUNTING
NYLON
SHOULDER

HEAT

SINK

WASHER MICA
WASHER
'

MICA

WASHER

(.003 THICK)

NYLON SHOULDER

WASHER

THE THERMAL RESISTANCE TAB

TO HEAT SINK WITH THE MICA WASHER
IS APPROXIMATELY 7S*C/W WITHOUT
ANY THERMAL CONDUCTING COMPOUND
AND ABOUT 175C/W WITH A THERMAL
CONDUCTING GREASE.

NOTE:

THE ABOVE PARTS WILL BE AVAILABLE UPON

REQUEST AS A SEPARATE KIT AT AN ADDITIONAL
COST. KIT #13888189 PI
I

1128

0*C

't

r*

Silicon

Power Tab

Transistors

D41E
"COLOR MOLDED"

Electric D41E is a black, silicone plastic encapsulated, power transistor

designed for various specific and general purpose applications, such as: output and
driver stages of amplifiers operating at frequencies from DC to greater than 1.0
mHz; series, shunt and switching regulators; low and high frequency inverters/

The General

converters; and

many

others.

FEATURING:
power

High

PNP complement

Black for PNP, brown for NPN

Low collector saturation voltage

free-air

dissipation

to

D40E NPN
(

0.5V typ. 1.0A1 C

(ft

Black Silicone
Leads Can be Formed

Excellent linearity

Fast switching

Hard

absolute

solder

To A TO-5 Pin Configuration

mount down

maximum

ratings:

(25C) (unless otherwise specified)

.<!>

D41E1

D41E5

D41E7

VcEO

30

60

80

Volts

'EBO

Volts

90

Volts

Voltage
Collector to Emitter

Emitter to Base

70

40

Collector to Emitter

Current* 2

'

Amps
Amps
Amps

Collector (Continuous)
Collector (Peak)

Base (Continuous)

Power Dissipation 121 <3)

Tab at 25 C
Tab at 70 C
FreeAirat50C
With Tab
Without Tab

Watts
Watts

Pt

Watts
Watts

Thermal Resistance
Junction to Case (Tab)

C/W

Junction to Ambient

c/w
c/w

With Tab
Without Tab
Temperature
Operating

TL

Lead Soldering,
1/16"

c
c
c

M
TsTG

Storage

1/32" from case for 10 sec

max

NOTES:
last digit is a part number which designates a voltage grade and an h FE level.
(2)Please refer to the safe region of operation curves for more information.
(3)Tab temperature is measured on center of tab, 1/16" from plastic body.

(l)The

1129

Tab and

lead forming

is

specified

by

a letter after this digit.

D41E
electrical characteristics: (25C)

(unless otherwise specified)

2 V, c = 100mA)
2V,I C =1A)

v ce =
(V CE =

Symbol

Min.

h FE
h F F.

50

Max.

Collector to Emitter Voltage

Collector Saturation Voltage

(I

1.0A,

0.1A)

D41E1,

5,

10

(1

50
10

Max.

Typ.

Max.

V CE(SAT

1.0

V BE (SAT)

1.3

Ices

0.1

Iebo

0.1

VcEO
VcEO
^CEO

D41E5
D41E7

Min.

50

Min.

=_10mA)D41El

(I c

Max.

Min.

10

D41E7

D41E5

D41E1
Forward Current Transfer Ratio

30
60
80

Base Saturation Voltage

(I C =-1.0A, I
0.1A)D41E1,
B =

5,

Collector Cutoff Current

(V CE =RatedV CES )
Emitter Cutoff Current

(V EB =-5V)
Collector Capacitance

(V CB

= 10V,

= 1 MHz)

Gain Bandwidth Product

(V CE =
10V, I c
20

Ccbo

mA)

fT

13

175

Switching Times
Delay Time and Rise Time

1A,I B 1= 0.1A)
Time

=
1A,I
c
b 1=Ib2 = 0.1A)

(Ic

td

180

tr

Storage
(I

Time
(I c =
1A, I Bl =r B2 =

ts

250

tf

110

Fall

0.1A)

T C -25C

T j"-25 c

jj-150"^

VbE(S0 -n

*\'5

TC -50C

LU

Q
O

UJ

TC -20C

If)

4"

UJ

a
o
UJ
o
>

Vs

^f

^ **

ul

si
^1

TC -I00C

Ul|

<

#1
x

<

^i

1
1

20

^^MCB*

30

40

50

60

VCE -VOLTS

Figure 2
0.01

0.01

O.I

Ic

MAXIMUM PERMISSIBLE

0.1

-AMPERES
Figure

DC POWER DISSIPATION

TYPICAL SATURATION

VOLTAGE CHARACTERISTICS
1130

70

80

D41E

"

"
'

PE<

500

CURR ENT

MAX DC

MAX. POWER DISSIPATION

UASt - "

>N

CURRE MTX>

'J

r~
25C

PULSED OPERATION
DUTY CYCLE < 50%

^.O.lms

PULSE
-55

IA

__

Oms PULSE

*"**.

lOms PL LSE''

V CE

D.

l.

100
=

2V

^V

!V

C-

\l
>

30

\\

O.IA

\i
MAX. VCE

04IE
*\

10.

MAX. Vce

0.01

D4IE

IC AMPERES

1
I

1.0

0.1

D4IE"

c:t

Figure

loov

lov

IV

TYPICAL H FE VS c

VCE

Figure 3

SAFE REGION OF OPERATION

100

,MiNrT|ONT0 AMBIFNT
""^ --

WITHOUT TAB
JUNCTIO M TO
WITH TA

AMBIENT^
JUNCTIOI*J

10

TO CASE (TAB)

""""
VCE =20V

1.0

10"

10-

10"'

10"'

10'

TIME

IN

10'

SECONDS

Figure 5

MAXIMUM TRANSIENT THERMAL IMPEDANCE

1131

D41E
IO00

900

800

Figure 6

700

TYPICAL TRANSCONDUCTANCE

CHARACTERISTICS

600

500

400

300

200

I00

0.4

0.6

VBE - VOLTS

.400
^365"

=
.520
.480

:
.105

.095"

190

"170
.315

-S||X45-

.285

no

065
CHAMFER

.575

SEATING

1.

REE
.420
.400

PLANE

.060
.050

065
CHAMFER

3TH
.250
.230

I05

095
.555

029

J05.
95

"^23 NOTE2

-JL_
1^

"

-026
TJiT
...
.190

026

'"519

~.T70"

TYPE U
NOTES
LEAD LABELS
ALL DIM. ARE IN INCHES AND ARE REF.
UNLESS TOLERANCED.
EMITTER
2..043-.057 LEAD WIDTH WITHIN
100
2 BASE
OF BODY.
3. COL LECTOR
4 MOUNTING TAB
(olectricolly common to collector)
I.

1132

TYPE U
FITS TO-5 PRINTED CIRCUIT

BOARD MOUNTING CONFIGURATION

Silicon

Power Tab

Monolithic Transistor

D41K

Very High Gain Darlington Amplifier

"Color Molded"

PNP Complement To D40K

h FE Min.

10,000

1.67 Watt Free-Air Power Dissipation

TYPICAL APPLICATIONS:
Audio Output

Driver

Equiv. Circuit

Regulator

Relay Substitute

Touch Switch

Oscillator

I.C. Driver

Servo-Amplifier

Leads Can Be Formed

To A T0-5 Pin Configuration

Capacitor Multiplier

maximum

absolute

ratings: (25C)(un less otherwise

specified)

D41 K2,4

D41K1.3
Symbol

Voltages
Collector to Emitter
Emitter to Base
Collector to Emitter

Vv n:o

-50
-13
-50

-30
-13
-30

m:bo

Units
Volts
Volts
Volts

Current

Amps
Amps

Collector (Continuous)
Collector (Peak)

(50% duty

cycle,

25 msec, pulse width)

Power Dissipation

Tabat25C'
Tab at 70C

'

Watts
Watts

10

Ft

Free Air at 25C

Watts
Watts

1.67'

With Tab
Without Tab

1.25

Free Air at 50C

1

Thermal Resistance

2'

Junction to Case
Junction to Ambient

R-9K

l2

12.5

C/W

75
100

c/w
c/w

Ron

With Tab
Without Tab

Temperature

Watts
Watts

1.33

With Tab
Without Tab

'

Operating
Storage

-55
-55

sk;

Lead Soldering,
'/w" V32" from case for 10 sec max

to

to

+150
+150'
c
c

+260-

NOTES:
'"The
,2)

last digit is

a part

Tab temperature

is

number which

Tab and

designates a voltage grade.

measured on center of tab,

/16

from

plastic

body.

1133

lead forming

is

specified

by

a letter after this digit.

D41K
electrical characteristics:

(25C) (unless otherwise specified)

D41K3
D41K4

D41K1
D41K2
Forward Current Transfer Ratio w
(I c = -200 mA, VCE = -5V)

h fE

(Ic=- -1.5A.V,CE
-5V) D41K1.2
(Ic = -1.0A,VCE = -5V) D41K3.4

Min.

Typ.

10K
IK
IK

Min.

Typ.

Max.

-30
-50

Volts

Collector to Emitter Voltage

(Ic=-10mA) D41K1,3
D41K2,4
Collector Saturation Voltage'

Volts

31

=-1.5A,I B =-3mA) D41K1.2

(Ic=-1.0A,I B =-2mA) R41K3.4

(I c

E(SAT)

1.5

Volts

1.5

Volts

2.5

Volts

2.5

Volts

Base Saturation Voltage 131

= -1-5A,

IB

0c =-1.0 A,

IB

(I c

=-3mA)
=

-2mA)

D41K1.2
D41K3,4

Collector Cutoff Current

(VCE = Rated
(Vct = Rated

VrrS) T,
VCES ,T

= 25 C)

HA
HA

0.5

=150C)

20

Emitter Cutoff Current

(VEB = -13V)

HA

0.1

Collector Capacitance

(VCB =-10V, f=

MHz)

pF

15

Gain Bandwidth Product

,= -5V,I c
-20 mA)

"'Pulsed measurement, 2 msec pulse width, duty cycle

MHz

100

fT

NC-VV

2%.

40K
V

IE

20K

SAT)

8K
Ic

/I-500

6K

Vef -5V

Tj-25"C

T^-25'C

4K

2K
-.01

-.02

-.04
Ic

-COLLECTOR CURRENT (AMPS)

IK
Ic

Figure

COLLECTOR CURRENT (AMPS)

Figure 2

TYPICAL SATURATION VOLTAGE

TYPICAL h FE

10

e
Ccto

(pf)

t-l

MHz

-4

-6

-8

-20

-10

-40

-SO

COLLECTOR-BASE VOLTAGE -VOLTS

Figure 3

TYPICAL C CB0

vs.

VOLTAGE

1134

vs.

Silicon

Power Tab

Transistors
"Color Molded"

The General

Electric D42C is a red, silicone plastic encapsulated, power

transistor designed for various specific and general purpose applications,
such as output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz series, shunt and switching regulators
low and high frequency inverters/converters and many others.
:

FEATURING:

absolute

High free-air power dissipation

NPN complement to D43C PNP
Red for NPN, green for PNP
Very low collector saturation voltage (0.5V

typ.

3.0A

Ic)

Excellent linearity
Fast switching

Hard

solder

Red

mountdown
Leads Can Be Formed To
TO-66 Outline

maximum

ratings:

(25C)

Fit

(unless otherwise specified)

D42C4
D42C5
D42C6

D42C1U>
D42C2
D42C3

D42C7
D42C8
P42C9

D42C10
D42C11
D42C12

Voltages
Collector to Emitter

VcKO
Vebo
Vces

Emitter to Base
Collector to Emitter

30

45

60

80

40

55

5
70

Volts
Volts
Volts

90

Current' 2 )
Collector (Continuous)
Collector (Peak)

Power

Dissipation* 2

Amps
Amps

3
5

Ic

8.0
2.1
1.7

Watts
Watts
Watts
Watts

10

C/W

60
80

c/w
c/w

12.5

Tab
Tab

at 25C
at 70C
Free Air at 25C
Free Air at 50 C

Thermal Resistance* 3
Junction to Case
Junction to Ambient
*

Rose

RejA

With Tab
Without Tab
Temperature* 3
Operating
Storage

-55 to
-55 to

T,
TsTQ

%2" from
case for 10 seconds max.

Lead Soldering, Me"

+ 150-

c
c

+150-

+260

NOTES:
last digit is a part number which designates a voltage grade and an
>Please refer to the safe region of operation curves for more information.
,:,)
Tab temperature is measured on center of tab, \'\e," from plastic body.

<"The

hrK

level.

Tab and

lead forming

is

specified

by a

letter after this digit.

<2

electrical characteristics:

(25C)

(unless otherwise specified)

D42C2
D42C5
D42C8

D42C3
D42C6
D42C9
D42C12
Min.

Max.

042C1

D42C1

D42C4
D42C7
D42C10

Min.

Ma

Min.

100

22

25

Forward Current Transfer Ratio

(Vcb
(Vc
(Vce

= IV, Ic = 0.2A)
= IV, Ic = 2A)
= IV, Ic = 1A)

40
20

h.F

120

20
10

Iif

1135

D42C
Electrical Characteristics (Continued)
Collector to Emitter
Sustaining Voltage! 4

(Ic

mA) D42C1,

100

2,3

D42C4,

5,

Min.

Max.

30
45
60

Volts
Volts
Volts
Volts

0.5
0.5

Volt
Volt

Volts

VcEoisrsi

D42C7,8,9
D42C10, 11,

80

12

Collector Saturation Voltage

=
=

(Ic
(Ic

1A,
1A,

Ie
IB

50 mA) D42C2, 3, 5, 6,
100 mA)D42Cl,4,7,10

9, 11,

12

Vc/;

(wat>

VcE

(WAT)

Base Saturation Voltage

(I c

1A, I

mA)

100

VbE<WAT)

1.3

Ices

10

mA

Iebo

100

,ttA

Ccbo

100

pF

Collector Cutoff Current

(Vce

Rated Vces, Tj

25C)

Emitter Cutoff Current

(V EB

5V, Tj

= 25C)

Collector Capacitance

(V C b

10V, f

MHz)

Gain Bandwidth Product

(V CE

= 4V, Ic -

20

Typ.

mA)

MHz

50

ft

Switching Times

Rise Time and Delay Time

(Ic
lA, Ibi
0.1A)

td

Storage Time
(Ic = 1A, I B1

0.1A)
0.1A)

Fall

Time

(Ic

1A,

=
=
Ibi =

=
I B2 =
I B2

+ t,

100

nsec

t.

500

nsec

t,

75

nsec

NOTE:
(n PuIsed

measurement, 300

/(.see

pulse width, duty cycle 5=2%.

VCE

V
CE

Tj-150'C

VOLT

.25V OLTS

s
Tj-25'C

\^

v CE

V CE

VOLTS

2.5

\\

"^~

VOLTS

Ij'25-C

\\

x>

kN

,N\

S.

XX

V
\

=^C^
"--C^^

31

c -

COLLECTOR CURRENT

TYPICAL

AMPERES
Ic

h FE VS.

COLLECTOR

URRENT - AMPERES

TYPICAL NORMALIZED

1136

h FE VS.


D42C

SAFE REGION OF OPERATION

i

ORWARD BIASED OPERATION

DUTY CYCLE 50%
c

< 7
!

current\>NSs
MAX DC
^^S
CURREN T X'"

Lr-t

c/-

OOpSEC PULSES

M SEC PULSES

LIMIT

50

MSEC PULSES

1
1
|

AX. DC F OWE
D SSIPAT ON

//I

2CI,2,3
CES M ' X D4

V
V

^
/ /J

CES MAX'D42C4,5,6-

VCES MAX: D42C7,8,9V

/,

CE S ""

l\

40

40 60 80 100
20
2
4
6
8 10
.-COLLECTOR TO EMITTER VOLTAGE-VOLTS

60 80 IOC

Tj

"

-v
1

-T

T
C

FORWARD BIASED OPERATION

25C

VlSAT.'

T~

1
1

40C
i->r

w
%

T.
C

70 "C
1

'

T-=85C

"1

*'*/
/

*
f

\w

<

:
V
CE(SA T)

C\J

'/

V/ /

o>

:I00C

U MAX.

Js

\\

^.

W^ =4
T

/T

B"!!>-

-L 'CE(SAT)'-

I C /I 8

CO
LU

DC CURREN T

-'"''.--

X
<

LU

LIMIT

1
1

V
1

CES

MAX D42CI
'

'

2,3

*
1

30

40

50

60

70

80

90

.01

-02

04

.06 jOSO.I

-COLLECTOR TO EMITTER VOLTAGE- VOLTS

I
TYPICAL SATURATION VOLTAGE
CHARACTERISTICS

MAXIMUM PERMISSIBLE DC
POWER DISSIPATION

1137

D42C
w TMOUT TAB_

fe

WITH TAB "

^.

JUNCTION TO AMBIEN

"\^**

II

::_ junction

'

TO CASE

i)

-h

IOV

V
CF

TIME-SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

V
V

CE

VOLT

CE-

25 VOLTS

/
/

',

/
'

//
//

//

1/

li

1/

V'SO"C^[

Tj
.01

.02

25-C

06 080.

.04

TYPICAL INPUT CHARACTERISTICS

f
i

'

S>
to

1000

CS

'

CE0

AT CLASSIFICATION VOLTAGE

AT CLASSIFICATION VOLTAGE

s.

N.

V.

1
S.

O
5

V
s

/J

02

\Lj

a:

>i

o
P

rs

0-6

v,

DIMENSIONAL OUTLINES
Notes:
150

125

100

(1)

Ices VS.

All dimensions are

in inches

75

TEMPERATURE -C

TYPICAL CEO

14

TYPICAL TRANSCONDUCTANCE
CHARACTERISTICS

10

10
OB
1.2
BASE-TO-EMITTER VOLTAGE- VOLTS
0.4

TEMPERATURE

and

are

reference unless
toleranced.
(2)

.043-.053 1ead

width within
0.100 of body.

-.
Lead Labels:

(1)

Base

(2)

Collector

(Common
with tab)

-"in"'"

(3)

Emitter

(4)

Mounting tab
(Electrically

common
collector)

1138

to

Silicon

Power Tab

Transistors

D42R

HIGH VOLTAGE

The General
specific

shunt

D42R

Electric

a red, silicone encapsulated,

is

power

transistor designed for various

and general purpose applications such as: 120 V.A.C. line operated amplifiers; series,
and switching regulators; low thru high frequency inverters convenors; t-\ and other

display tube deflection; and

many

others.

FEATURING:

NPN

Red

Very low collector saturation voltage

Excellent Linearity

for

Fast switching

POWER-GLAS

Hard

solder

Leads Can be Formed To

TO-66 Outline

Fit

mountdown

maximum

absolute

RED
passivated mesa

ratings:

(25C) (unless otherwise specified)

Voltages

v CEO
Vces
V ebo

Collector to Emitter

Collector to Emitter

Emitter to Base

31,

R3

250
400

D42R2, R4

Units

300
500

Volts

Volts

Volts

Current

Amp.

1.0

Collector (Cont.)

Power Dissipation
Case
Case

(&)

25C

(a)

70C,

Free Air

(g>

-f Watts

15

VCe =

175

25 C

9.6

2.1

Watts
Watts

Thermal
55 to

Tstg

Thermal Resistance
Junction to Case
Junction to Ambient
With Tab
Without Tab

Rejc

Forward Current Transfer Ratio*

I

c = 500 ma, V C e

(&)

c = 50 ma, V C e

-r

150

8.33-

-*C/W

60
80

-*C/W

-*.C/W

Ret j a

electrical characteristics:

(a)

-*C
-C

55 to-r 150

Operating Temperature
Storage

(25C) (unless otherwise specified)

Min.

Typ.

30
20

65

Max.

Units

'

= 10V
= 10V

h FE
h FE

75

Collector Cut-off Current

Vces = Max. Rating

Collector to Emitter Sustaining Voltage'
(a>

c = 100 ma

D42R1.R3
D42R2, R4

1.0

CES

CEO(SUS)

1139

250
300

Volts

Volts

A
D42R
ELECTRICAL CHARACTERISTIC (Continued)
Min.

Typ.

Max.

Units

0.4

1.0

Volts

0.4

1.0

Volts

0.85

1.2

Volts

10

uA

Collector to Emitter Saturation Voltage (l)

@I C

= 500

@ Ic

= 300mA, I =
B

mA, I B = 50mA D42R1, R2

30mA" D42R3, R4

Base to Emitter Saturation Voltage 11

(
I

CE (SAT)

'

c = 500 ma

V BE (SAT)

ma

50

Emitter Cutoff Current

(V EB =5V)

'EBO

Collector Capacitance

(V CB

10V, f=

mHz)

pF

30

Gain Bandwidth Product

(I

c = 50 mA, V CE

= 20V)

Switching Times (See Figures

and

2)

=
c 500mA, I B1 I B2
Rise Time and Delay Time
Storage Time
Fall Time

(V cc = 50V

mHz

55

100mA)
tr

ts
tf

.2

.5

2.5

4.5

1.8

3.0

usee
usee
usee

NOTES:
1)

2)

Pulsed measurement, 300 usee, pulse. Duty cycle

See Sustaining Voltage Test Circuit.

^2%.

-Ve

*V BB
RISE
1

Tl

i
r

ME =

B1

=I

B2

50m

NANOSECONDS MAX PULSE=IO/*SEC

RR.T. =IOtn SEC
FALL TIME=
NANOSECONDS MAX CRT=TEKTRONIX CURRENT
TRANSFORMER
FIGURE

OUTPUT PULSE WAVEFORM

FIGURE 2

SWITCHING CIRCUIT TO MEASURE

SWITCHING TIMES

OSCILLOSCOPE DISPLAY OF INPUT AND OUTPUT PULSE

WAVEFORM IS OF SWITCHING CIRCUIT SHOWN
IN FIGURE

J50mh

500
E

SCOPE
V
H

H6 RELAY
30-60 Hz
v*#
300.0.

-wv

300

S 200

in.

100

FIGURE 3
VCEO(SUS) TEST CIRCUIT

100

200

300

400

COLLECTOR-TO-EMITTER V0LTA0E (VOLTS)

1140

FIGURE 4
VCECHSUS) OSCILLOSCOPE DISPLAY


D42R
-COLLECTOR
1

Tc

jX

Forward Biased Operation

^v
1

12

10

~g
hi

^
of
El

Tc

Tc

"

Tc

Tc

Tc

4o*e

55"C

K\

XX

CURRErV T

25C

mSEC PULSE
100 uSEC PULSES10 uSEC PULS
1

"

/*.

*'

^
"^o
/..

^N>V

"^

1
1

\N

R5C
*

t>

I00C

W*"
(M

FORWARD BIASED OPERATION

DUTY CYCLE * 50%
T 70C

<i

UJ

vCE0
v

UJ

41

ceo

X'

*J

D42RI
,-

100

10

COLLECTOR EMITTER VOLTAGE - VOLTS

MAXIMUM PERMISSIBLE DC POWER

SAFE REGION OF OPERATION

DISSIPATION

IOC

VcE' ov_
T,-2 c

T-

WITHOUT TAE
j UNCTION

Twr HTAB

TO AMBIENT

eio
.1

JNCTION TO CASE

y
o
10-5

IO-

10-3

10-2

10

I0

I0

rc -COLLECTOR CURRENT-MILLIAMPERES

10-1

TIME -SECONDS

TYPICAL

MAXIMUM TRANSIENT THERMAL IMPEDANCE

h F E VS.

loao

Vet
I

9
'l-

K <

0.

a
ID

N
4
X

TJ 29 "C

1,0

i-T^-^ ^_

',-"

'

10'

"i

IO

10*

I c -COLLECTOR CURRENT- HI LU AMPERES

NORMALIZED h FE

VS.

ao

raao

COLLECTOR-TO-aAX - VOLTS -

COLLECTOR-TO-BASE JUNCTION
VS. REVERSE BIAS

CAPACITANCE

VOLTAGE

1141

uOOjO

10.0

D42R

/
i

5.0

c /i b

Tj =

= io

25C

/
1
1

&

1.0

V BE(SAT)

j"

0.!

CE(SAT)

^/

.05
.01

.05

.02
l

0.1

0.2

0.5

20

1.0

COLLECTOR CURRENT AMPERES

TYPICAL SATURATION VOLTAGE CHARACTERISTICS

DIMENSIONAL OUTLINES

Notes:

(1)

All dimensions are

in inches

and are

reference unless
toleranced.
(2)

.043-.053 1ead

width within
0.100 of body.

Lead Labels:

(I)

Base

(2)

Collector

(Common
with tab)
(3)

Emitter

(4)

Mounting tab
(Electrically

common
026

TYPICAL

INSULATING

INSULATING

to

collector)

.019

KIT

MOUNTING
NYLON

HEAT

SINK

SHOULDER
WASHER MICA
TWASHER
NUT

4-40
SCREW

LOCK
WASHER

MICA

WASHER

(-003 THICK)

NYLON SHOULDER

WASHER

I
THE THERMAL RESISTANCE TAB
TO HEAT SINK WITH THE MICA WASHER
IS APPROXIMATELY 75 C/W WITHOUT

NOTE:

THE ABOVE PARTS WILL BE AVAILABLE UPON

REQUEST AS A SEPARATE KIT AT AN ADDITIONAL
COST. KIT #I38B8I89GII

ANY THERMAL CONDUCTING COMPOUND

AND ABOUT 3.75 C/W WITH A THERMAL
CONDUCTING GREASE.

1142

Silicon

Power Tab

Transistors
"Color Molded"

The General Electric D43C is a green, silicone plastic encapsulated, power

transistor designed for various specific and general purpose applications,
such as: output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHZ series, shunt and switching regulators
low and high frequency inverters/converters and many others.
;

FEATURING:

absolute

Green

High free-air power dissipation

PNP complement to D42C NPN
Green for PNP, red for NPN
Very low collector saturation voltage

Leads Can Be Formed To

TO-66 Outline

-0.5V typ.

-3.0A

Fit

Ic)

Excellent linearity
Fast switching

Hard

solder

mountdown

maximum

ratings:

(25C)

(unless otherwise specified)

D43CKD
D43C2
D43C3

D43C10
D43C11
D43C12

D43C4
D43C5
D43C6

D43C7
D43C8
D43C9

-45

-60

80

Voltages
Collector to Emitter

VcEO
Vebo
Vces

Emitter to Base
Collector to Emitter

-30
- 5
-40

-55

-70

Volts
Volts
Volts

-90

Current'-'

Amps
Amps

Collector (Continuous)
Collector (Peak)

Power

Dissipation 2
at 25 C
<

Tab
Tab

>

Free Airat25C
Free Air at 50C
Thermal Resistance' 3
Junction to Case
Junction to Ambient

2.1
1.7

Watts
Watts
Watts
Watts

10

C/W

60
80

C/W
C/W

+150
+150

c
c

12.5
8.0

Pt

at 70C

'

0JC

r*;;

With Tab
Without Tab
Temperature (3)
Operating
Storage

Lead Soldering,

55
-55

T,
TsTO
Via"

V32"

from

to
to

+260-

case for 10 seconds max.

NOTES:
'"The
<

number which designates a voltage grade and an Vifk level.

refer to the safe region of operation curves for more information.
temperature is measured on center of tab, ^ifi" from plastic body.
last digit is a part

Tab and

lead forming

is

specified by a letter after this digit.

2 >Please

(3)

Tab

electrical characteristics:

(25C)

(unless otherwise specified)

D43C3
D43C6
D43C9
D43C12
Min.

Max.

D43C2
D43C5
D43C8
D43C1

D43C1

D43C4
D43C7
D43C10

Min.

Max.

Min.

40

120

25

Forward Current Transfer Ratio

(Vce

= -IV, Ic =

-0.2A)

(Vc = -IV, Ic = -2A)

(Vce = -IV, Ic = -1A)

hr
hr

40
20

hy

120

20

1143

10

D43C

Electrical Characteristics
Collector to Emitter
Sustaining Voltage! 4
(Ic

(Continued)

Max.

Min.

= 100 mA)

D43C1.2, 3
D43C4, 5, 6
D43C7, 8, 9
D43C10, 11,

-30
-45
-60
-80

Vcb (sat)

-0.5
-0.5

Volt
Volt

Vb

1.3

Volts

-10

mA

-100

/iA

125

pF

Vc
12

Volts
Volts
Volts
Volts

Collector Saturation Voltage

(Ic
(Ic

= 1A, I B = -50 mA) D43C2,

= 1A, I B = 100mA)D43Cl,4,

3, 5, 6, 8, 9,
7,

1,

10

12

Vce (sat)

Base Saturation Voltage

(Ic

-1A,

IB

-100 mA)

Collector Cutoff Current

(Vce

Rated Vces, Tj

25C)

Emitter Cutoff Current

(V EB

= -5V,

Tj

= 25C)

Collector Capacitance

(Vcb

10V, f

MHz

Gain Bandwidth Product

(Vce

= -4V, Ic =

Typ.

-20 mA)

f.

40

MHz

50

nsec

500

nsec

50

nsec

Switching Times

Rise Time and Delay Time

= -1A, I B1 = -0.1A)
(Ic = -1A, I B1 = I B2 = -0.1A)
Fall Time
(Ic = -1A, Ibi = I E2 = -0.1A)
(Ic

td

Storage Time

tr

t.

NOTE:
(4>

Pulsed measurement, 300

/*sec

pulse width, duty cycle

^2%.

.,

,,

CL

T, =I50C

\N

i
l

^ 25

c
;

^sJ\{

!
i

-^ ^

v CE

>-2 5

CE

VOLTS ^

VOLT

:V

(Cs \l\

'
'

c \

^kt
_\\

T~
f

\
\
"\-

= <>c

.
;

i
i

,*^e=_

\
i

"^^S^CT"
1

i
i

Ic

>2

-COLLECT0R CURRENT- AMPERES

-04

-06-08-0.1

-i.o

^-COLLECTOR CURRENT -AMPERES

TYPICAL

h FE VS.

TYPICAL NORMALIZED h FE VS. c

1144

O^N
i

D43C

-ORWAD BIASED OPERATIOf.

DUTY CYCLE < 50 %

-8
|

SINGLE PULSE. T c ;25C

-6

PEAK COLLECTOR C JRRENT

CURRENT

-4

^^s

MAX DC
CURREN V

Op SEC PULSES

^C>

LIMIT

-2

100,1 SEC PULSES

IM SEC PULSES

\"

r-

\l

'

MAX. DC CURRENT

LIMIT

50 M SEC PULSES

(\

XA/i y

wvrv

-.8

//\A V ~r

//\ V /\K

MAX. DC

VVV

-.6

///

-.4

_//,

lOO^SEC PULSE

DIS alPATIOfi

//

50 M SEC PULSE

/ /

-.2

1)

v c MA X
cc

0.1

08

MAX

CE

ni 3CI.2.3

D43C4,5,6

.06

V _. MAX. D43C7.8.9

Uffij

c|

04

m;

CE S

UH-J

0' 3CI0.II, 2

X.

-4

-6

-8-10

-4

-2

-6 -8 -10

-40-60-80-100

-20

^1

V
CES >*AX'D43C7,8,9
V rF MAXiD43CI0.ll,l 2

MAX:D43C4,5,6

CES

- 01

'vil!

02

D43CI.2.3
CES MAX

-20

.r
i\
^L i

-40 -60-80-100

-COLLECTOR TO EMITTER VOLTAGE- VOLTS

-COLLECTOR TO EMITTER VOLTAGE-VOLTS

SAFE REGION OF OPERATION

Tj

V
BE SAT)
1

T
1

25C

T,.:

55C

\\
\\

v 70C

'

T
|

MAX. DC CURRENT
LIMIT
i

1
1

MAX

D43CI.2 ,3

V^ MAX

D43C4,; ,6

CE g

CE S

// /

//

10

=Z0

i
D

XT

yy

>
V

^*
s*

Vi B "

1
1

SAT)

Xln^T^'
O

$
\\

=IOOC

<n

'

f*

"&-

(M

\\

=85C
C

'

'/

>_-

'

'

V'v

I /

FORWARD BIASED OPERATIO N

V40C

'

'

X
1

<

^y

^>

-20

-30

-40

-50

-60

-70

-80

-90

-100

-.02

VrF -C0LLECT0R TO EMITTER VOLTAGE-VOLTS

-.04

-06^08-0.1

COLLECTOR CURRENT-AMPERES

TYPICAL SATURATION VOLTAGE

CHARACTERISTICS

MAXIMUM PERMISSIBLE DC
POWER DISSIPATION

1H5

D43C

100

WITHOUT TAB

WITH TAB "

JUNCTION TC AMBIENT
10

JUNCTION TO CASE

'

~
III

-*

III

-'

If

10V

CE

-- J C "200 nA

-j

._

III

-3

TIME-SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

VOLT

r~

VCE

VOLT

CE

1
-

2.5

VOLTS

-1.0

t-J

1/
i

>

/
/
/

J-- 55*C

-.8

(9

/
i

>
<r

Tj-25'C

i
i

-.6

\\

/j

LU

<

ij

J-

O'C

15

V)

"

II

UJ

-.4

j|l

0-

2
<

to

ij

z
ID

UJ

>

-2

o
g

TJ

A-C

-.0 4

-.c

-C 6-.C- 0.1

-I

150 'C

'(J

CURRENT-mA

Ig-BASE

Tj' 25^

TYPICAL INPUT CHARACTERISTICS

/.

^- -55 c

1,000,000

CES

~I

CE0

AT CLASSIFICATION VOLTAGE

i
AT CLASSIFICATION VOLTAGE

-02

^E -

Xs

DIMENSIONAL OUTLINES

400

-o.e

-08

(1)

s.

All dimensions are

in inches

and are

reference unless
toleranced.

(2)

Lead Labels:
REF

060

150

125

095

100

Ices VS.

Base
Collector

(Common

TEMPERATURE -'C
l

(1)
(2)

with tab)

TYPICAL CEO

.043-.0531ead
width within
0.100 of body.

\}

-1
2

n
*i

(3)

Emitter

(4)

Mounting tab
(Electrically

common

TEMPERATURE

collector)

1146

-14

TYPICAL TRANSCONDUCTANCE
CHARACTERISTICS
Notes:

-1.2
-io
BASE TO EMITTER VOLTAGE - VOLTS

-o.4

to

Power Pac

Transistors
"Color Molded"

The General Electric D44C

is a red, silicone plastic encapsulated, power

transistor designed for various specific and general purpose applications,
such as: output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching regulators;
low and high frequency inverters/converters and many others.
;

FEATURING:

NPN

complement to D45C PNP

Red for NPN, green for PNP
Very low collector saturation voltage (0.5V

Hard

solder

maximum

absolute

typ.

3.0

Ic

Excellent linearity
Fast switching
Round leads

Red

JEDEC TO-220 A B

mountdown

ratings:

(25C)

(unless otherwise specified)

D44C4
D44C5
D44C6

D44C1
D44C2
D44C3

D44C10
D44C11
D44C12

D44C7
D44C8
D44C9

Voltages
Collector to Emitter

VcEO
Vebo
VcES

Emitter to Base
Collector to Emitter
Current' 1

30

45

60

80

40

55

70

90

Volts
Volts
Volts

Amps
Amps

Collector (Continuous)
Collector (Peak)

Power Dissipation d>

Case at 25C
Case at 70C
Free Air at 25C
Free Air at 50C

Watts
Watts
Watts
Watts

30
19
1.67
1.33

Thermal Resistance* 2
Junction to Case
Junction to Ambient
)

Temperature 2
Operating
Storage
<

Rejc

4.2

Rsja

75

C/W
C/W

>

Lead Soldering,

Via"

c
c

-55 to +150
55 to +150

TsTG

%2" from

TL

case for 10 seconds max.

1-260

Notes:
(1) Refer to the Safe Region of Operation curve for further information.
(2) Case temperature reference point is indicated on the Dimensional Outline Drawing.

electrical characteristics:

(25C)

(unless otherwise specified)

D44C3
D44C6
D44C9
D44C12
Min.

Forward Current Transfer Ratio

(Vce = IV, Ic = 0.2 A)
(Vce = IV, Ic = 2A)
(Vce = IV, Ic = 1A)

hp

40
20

hF

Max.
120

D44C1

D44C2
D44C5
D44C8
D44C1
Min.

100

D44C4
D44C7
D44C10

Max.
220

Min.

25

20
10

1147

D44C
Electrical Characteristics (Continued)
Collector to Emitter
Sustaining Voltage' 3
(Ic

100

mA)

Max.

Min.
)

Vr

D44C1,2, 3
D44C4, 5, 6
D44C7, 8,
D44C10, 11, 12

30
45

Volts
Volts
Volts
Volts

60
80

Collector Saturation Voltage' 31

(Io
(Ic

= 1A, I B = 50 mA) D45C2,

= 1A, I B = 100mA)D45Cl,4,

3, 5, 6, 8, 9,

7,

10

Base Saturation Voltage (3)

(Ic = lA,I B =: 100 mA)

1 1,

12

VcE

VCE (SAT)

0.5
0.5

Volt
Volt

VbE

1.3

Volts

Ices

10

tiA

Iebo

100

fiA

CcBO

100

pF

(SAT)

(SAT)

Collector Cutoff Current

(Vcb

= Rated V C e

S,

T,

= 25C)

Emitter Cutoff Current

(V EB

5V, T,

= 25C)

Collector Capacitance

(Vcb

10 V, f

MHz)

Typ-

Gain Bandwidth Product

(V CE

= 4V, Ic = 20 mA)

ft

Switching Times
Rise Time and Delay Time
(Io
lA, I B i
0.1A)

=
= Ib2 = 0.1A)
Fall Time
(Ic = 1A, I Bl - I B2 = 0.1 A)

td

Storage Time
(Ic = lA, Ibi

Note:
(8) Pulsed measurement, 300

//Bee pulse,

duty cycle

+ t,

50

MHz

100

nsec

t.

500

nsec

t,

75

nsec

2%.

20

30
V

40

50

60

MAXIMUM PERMISSIBLE DC
POWER DISSIPATION

40 60 60 100
V
-C0LLECT0R TO EMITTER VOLTAOE -VOLTS
CE
10

20

SAFE REGION OF OPERATION

1148

70

-C0LLECT0R TO EMITTER VOLTAGE-VOLTS

CE

D44C

VC
V

I50"C

CE

VOLT

2.5

VOLTS

V =E

VOLT

D44C2,3,5,6,8.9,II

^^

~~

V CE'2 5 TO LTS

'

SN
T,.25'C

04 1C2,3,5,6, B.9,11,

\\

T -Z5*C

--"

"^

\\
V

_n^

-55 *C

=.

=-=c^
'

.01

.02

.04

.06 .08

1-0

0.1
!(-

- COLLECTOR CURRENT -

TYPICAL

.04

h FE VS. c

.08

.06

0.1

I c ~ COLLECTOR

CURRENT-AMPERES

TYPICAL NORMALIZED

T.

.^^^

AMPERES

h FE VS.

-150 c

"
I

CE

SAT)

c'

z *-'\

V
,\

y /
//
/

VOLT

1.0

.8

,r-

55"C

I-

Yc/ SAT]

Vh

>

^~ ^T

'

:i c /i

b -i

<
m

j" ! 0-C

ir

HI

,-25'C

.6

5"

01

oi

.02

j04

oe.oe ai

.0)

.02

i.

.04

.06

06

I--BASE

I-- COLLECTOR CURRENT- AMPERES

CURRENT-mA

TYPICAL INPUT CHARACTERISTICS

TYPICAL SATURATION VOLTAGE

CHARACTERISTICS

1149

12

D44C
^r=

::

f|
JUNCTION TO Ah 6IENT

==:

-^-

JUNCTION

TC

CASE

V
CE'

)-5

10-5

I0"<

-*

3V

10-1

ir

,_

1-^2

TIME-SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

1
1

VC

__

CE

VOLT

25 VOLTS

'

>i

lopoo

/
'

1
i

CES

AT CLASSIFICATION VOLTAGE

- - -I
AT CLASSIFICATION VOLTAGE
CE0

j
i

Tj-ISO'C^J
1

T,

25-C

'

5-C-

j
1

j
j

/
/

75

100

125

50

TEMPERATURE-

/ /
/

02
Vj

TYPICAL C EO-

0.4
0.6
OB
1.0
BASE-TO-EMITTER VOLTAGE-VOLTS

>CES VS.

25

TEMPERATURE

TYPICAL TRANSCONDUCTANCE
CHARACTERISTICS
Dec.

Sym.

DIMENSIONAL OUTLINES
TERMINAL ARRANGEMENT

BASE
Z COLLECTOR
I

3 EMITTER
4.

MOUNTING TAB
(ELECTRICALLY COMMON
TO COLLECTOR!

Min.

Metric

In.

MM

Max.
.420

Min.

Max.

9.91

10.67

3.05

.390

B
C
D
E
F
G

.110
.240

.120
.260

2.79
6.10

.325

.355

8.26

.095

.105

.190

.210

2.41
4.82

.029

.035

.73

.89

.115

2.16

2.92

.060

1.02

1.52

.085
.040
.160

.190

4.06

4.83

.141

.145

3.58

3.68

K
N

1150

.500

6.61
9.02

12.7

.065

2.67
5.34

1.65

Silicon

Power Pac

Monolithic Transistor

Very High Gain Darlington Amplifier

D44E
"Color Molded"

TYPICAL APPLICATIONS:

Equiv. Circuit

absolute

maximum

Driver

Switch

Regulator

Audio Output

Capacitor Multiplier

Relay Substitute

Solenoid Driver

Oscillator

Inverter

Power Supply

ratings:

(25C)

JEDECTO-220 AB

Servo-Amplifier

(unless otherwise specified)

D44E1

D44E2

D44E3

60

80

Volts

Volts

60

80

Volts

Units

Symbol

Voltages
Collector to Emitter

Emitter to Base
Collector to Emitter

V,CEO

EBO

CES

Current (1)
Collector (Continuous)

10

Amps

20

Amps
Amps

Collector (Peak)

(50% duty

cycle, 25 msec, pulse width)

Base (Continuous)

Power Dissipation 111

50

Case at 25C
Free Air at

25C

Watts

1.67-

Watts

2.5

75

C/W
C/W

+150
+150

C
C

Thermal Resistance C2 )
Junction to Case
Junction to Ambient

Temperature^ 2 )
-55 to

Operating
Storage

T STG

Lead Soldering, 1/16" 1/32"

from case for 10 seconds max.

-55 to

+260

NOTES:
Refer to the Safe Region of Operation curve for further information.
Drawing.
(2) Case temperature reference point is indicated on the Dimensional Outline
(1)

1151

D44E
electrical characteristics: (25^C)

(unless otherwise specified)

D44E1
D44E2
D44E3
Forward Current Transfer Ratio (3)
(I
5A, V,CE
5V)
C

Min.

1000

'FE

Min.

Max.

Typ.

Collector to Emitter Voltage

c = 100mA)D44El

(I

40
60

V,

CEO

D44E2
D44E3

80

Collector Saturation Voltage

Volts
Volts
Volts

c = 5.0 A, I B = 10mA)
(I
c = 10.0A, I B = 20mA)
(I

CE(SAT)

1.5

Volts

CE(SAT)

2.0

Volts

V BE(SAT)

2.5

Volts

'CES
JCES

10

1.0

mA

EBO

1.0

-CBO

130

pF

0.6

MS

Time
=
(I
10A,I B1 =I B2 = 20mA)
c
Fall Time

2.0

AiS

c = 10A, I B1 =I B2 = 20mA)

0.5

Base Saturation Voltage ( 3

(I

c = 5.0A,

'

10mA

Collector Cutoff Current

(V CF = Rated
(VCE = Rated

V CES Tj
VCES ;T J

= 25C)
= 150C)

Emitter Cutoff Current

(V EB = 7V)
Collector Capacitance

(VCB = 10V, f=

MHz)

Switching Times

Delay Time and Rise Time

(I
c = 10 A, I B1 = 20mA)

td

+t r

Storage

(I

NOTE:

(3) Pulsed
(4) Pulsed

measurement, 2m sec pulse width, duty cycled 2%.

measurement, 300 sec pulse width, duty cycle g 2%.

__

--f-i

zvs--j-\

v c E(

?o
=

"be (Sttn

*v~-

".

T,

Tj

25

I5C

""" "

Tj*2 5C

IT""-

0.5
0.5

,.

''

'

, .*

"VlB" 500

("""

Tj = =>0(
l

-"

2
l

J'J
~ "

'?'}

TJ

"1

'

1 -/-'

-4 DC

-Hr-

^===-7-h

c -C0LLECT0R CURRENT -AMPERES

TYPICAL SATURATION VOLTAGE CHARACTERISTICS

1152

20

MS


D44E
40K

Vrc

?V

IOK
Tj = I50" C

PULSE WIDTH = 2ms

DUTY CYCLE = 2%

2 5-C

400

-40*C

100
I

20

100

1.0

0.1

0.01

0.001

.-COLLECTOR CURRENT-AMPERES

TYPICAL GAIN CHARACTERISTIC

&U

100

JUNCTION TO

AMBIENT

10
f

z
<
o
u
0.
z

s r'

JUNCTION

"TO CA St

.001

-3

-*
10

10

10

10

10

TIME -SECONDS

TRANSIENT THERMAL IMPEDANCE

I
V

EMITTER VOLTAGE -VOLTS

CE -COLLECTOR TO

MAXIMUM PERMISSIBLE DC POWER

1153

DISSIPATION

D44E

^^

10

1.0

/
/
0.1
/

PULSED MEASUREMENT
PULSE WIDTH ^300 us
DUTY CYCLE 2%
VCE = 2V

0.01

/
Tj =

I50C

Tj=25C

oni

0.4

0.8

-40C

1.2

1.6

2.0

2.4

V BE -BASE TO EMITTER VOLTAGE-VOLTS

TYPICAL TRANSCONDUCTANCE CHARACTERISTICS

III

20

PEAK COLLECTOR CURRENT

10 ms PULSES
-Ims PULSES
-

10

MAXIMUM DC
COLLECTOR CURRENT

-100/is

PULSES

DUTY CYCLE =550%

T
c

=E

oi

x L L3
^
o |

#\

# -a-

\\

25'C

'

1.0

10

V CE

COLLECTOR TO EMITTER VOLTAGE - VOLTS

SAFE REGION OF OPERATION

1154

ioi

Si

---'"

alt3 ,0:h
S

MAX DC POWFR
DISSIPATION

^
?

'

\i
80

Power Pac

Transistors
"Color Molded"

The General

D44H

Electric

is

a red, silicone plastic encapsulated, power

and general purpose applications,

transistor designed for various specific

such as: output and driver stages of amplifiers operating at frequencies

from DC to greater than 1.0 MHz; series, shunt and switching regulators;
low and high frequency inverters/ converters; and many others.

FEATURING:
NPN complement to D45H PNP
Red for NPN, green for PNP
Very low collector saturation voltage
Excellent linearity

maximum

absolute

JEDECTO-220 A B

Fast switching

Round
(0.24

typ.

ratings:

5.0

A c)

leads

Hard solder mount down

TERMINAL ARRANGEMENT

(25c unless otherwise specified)

D44H1 D44H4 D44H7 D44H10

D44H2 D44H5 D44H8 D44H11
Voltages

V CEO
V EBO

Collector to Emitter

Emitter to Base

Current

'

30

45

60

80

Volts
Volts

1.

2.
3.

>

Collector (Continuous)
Collector (Peak)

Irj

10
20

Amps
Amps

50

Watts
Watts
Watts
Watts

BASE
COLLECTOR
EMITTER
MOUNTING TAB
(ELECTRICALLY
TO COLLECTOR

5O0

COMMON
1

U|

Power Dissipation' 1
Case at 25 C
Case at 70 C
Free Air at 25 C
Free Air at 50 C
Thermal Resistance (2)
)

PT

32

1.67
1.33

Junction to Case
Junction to Ambient

Temperature' 2

R#JC

2.5

R0JA

75

2I

,^095

Outline Drawing

C/W
C/W

Tj

Operating
Storage

T STG

Lead Soldering, 1/16" 1/32"

from case for 10 seconds
max.

-55
-55

to

to

+150
+150

+260-

Ti

NOTES:
(1) Refer to the Safe Region of Operation curve for further information.
(2) Case temperature reference point is indicated on the Dimensional Outline

electrical characteristics:

Drawing.

(25c unless otherwise specified)

Min.

Forward Current Transfer Ratio

D44H1 4,
(V C = IV, I f
2A)
(V CE

IV, I c = 4A)

7,

10

D44H2,

5, 8, 11

D44H1
D44H2

5, 8, 11

4, 7,

10

Collector to Emitter
Sustaining Voltage' 3
(I
c = 100 mA) D44H1,,2

hFE

35

hFE

60
20
40

hF E
hF E

Max.

'

V CEO (sus)

D44H4,
1,5
D44H7, 8
D44H10, 11
Collector Saturation Voltage' 3
D44H2,
(I
c = 8A, I B = 0.4A)
D44H1,
(I c = 8A, I B = 0.8A)
Base Saturation Voltage' 3
= 8A, I B = 0.8A)
(I

Volts
Volts
Volts
Volts

30
45
60
80

5, 8, 11

4, 7,

10

V CE (SAT)
V CE (SAT)

1.0
1.0

Volt
Volt

V BE (SAT)

1.5

Volts

0.62

Volts

c
On-Voltage
(I c = 10 mA, V CE = 2V)
Collector Cutoff Current

(V CE ^ Rated V CEO T, = 25C)

Emitter Cutoff Current
(V EB = 5V, Tj = 25C)
,

V B E(on)

0.52

'CBO

EBO

1155

10

HA

100

HA

D44H
Collector Capacitance
(V CB = 10V, f=l MHz)

Typ.

pF

130

Gain Bandwidth Product

(V CE = 10V, I c = 500 mA)
Switching Times
Rise Time and Delay Time
(I C = 5A,I B1 =0.5A)
Storage Time
(I C = 5A, I B1 =I
B2 = 0.5A)
Fall Time
(I
C = 5A, I B1 =I B2 =0.5A)

MHz

50

300
ts

500

tf

140

NOTE:
(3) Pulsed

measurement, 300

jllsec

pulse,

044 H

duty cycle

< 2%.
;l

SO'C

^^^

Tj =

[50

*^^

X\

,.

Tj-2 s*c

.^.

s.

**

Tj =

v
r

\
,'

25"C

\
>5

,,.-

c
_

T,

*""

-COLLECTOR CURRENT-AMPERES

Ic

Ic-COLLECTOR CURREMT-AMPERES

TYPICAL GAIN CHARACTERISTICS

TYPICAL GAIN CHARACTERISTICS

MM

PEAK COLLECTOR CURRENT

MAX DC
TC*

r-

2 5C

)apC

X
1

-|-tk

POWER DISSIPATION
T
/ c

7 * c

'

I
|

1
1

Tc

85"C

l\

\l

5]

\\

Tc

lOO'C

X -Hxhi--

;
s

fo
v

DUTY CYCLE

"l

~>

5 50%
T c < ?0C

v_

wsv

J3
I

>

TN

\
v

r
^
i

MAXIMUM PERMISSIBLE DC
POWER DISSIPATION

V CE -

COLLECTOR TO EMITTER VOLTAGE

VOLTS

SAFE REGION OF OPERATION

llllTj

V BE(SAT)

Mill

D44H

25C

C /I B

" '0>

AMBIENT

^
-

= -

~V^

---

X+

20^.

S&^>
*~? ''

JUNCTION

<
VCE(SAT)

X
E
X
'

VCE(SAT)

IC

/1 B

**

l0

'-'-'

o.i

< aot

~~

ec

1-0
I

C -

QXUf

,.

COLLECTOR CURRENT

10.0
-

0.001
irr 8

io-<

10"'

IO"

10

10"

10"

TIME - SECONDS

AMPERES

TRANSIENT THERMAL IMPEDANCE

TYPICAL SATURATION
VOLTAGE CHARACTERISTICS
1156

TO C aseLU

Silicon

Power Pac

Transistors

HIGH VOLTAGE

Electric D44Q is a red, silicone encapsulated, power transistor

designed for various specific and general purpose applications such as:
120 V.A.C. line operated amplifiers; series, shunt and switching regulators;
low thru high frequency inverters/convertors; t-v and other display tube

The General

deflection; and

many

others.

FEATURING:

Red

for

Fast switching
Round leads
Glass passivated mesa

NPN

Very low collector

Excellent linearity

stauration voltage

construction

Compatible with

maximum

absolute

ratings:

(25C)

Voltages

(unless otherwise specified)

D44Q1

D44Q3

D44Q5

125

175

225

200

250

300

V CEO
V E BO
V CBO

Collector to Emitter
Emitter to Base
Collector to Base

TO-66 mounting

JEDEC

registration

Volts
Volts
Volts

Current
4.0

Amps

31.25
20.0
1.67
- 1.33

Watts
Watts
Watts
Watts

RfljC

4.0

R0JA

75

C/W
C/W

Operating

Tj

Storage
Lead Soldering, 1/16"

T STG
TL

Collector (Continuous)

Ic

Power Dissipation^
Tab at 25C
Tab at 70C

PT

Free Air at 25 C
Free Air at 50C

Thermal Resistance
Junction to Case
Junction to Ambient

Temperature^'

From Case
Notes:

for

10

1/32"

sec.

-55
-55

oc
C
C

+150
+150
+260 -

to
to

max.

Refer to the safe region of operation curve for further information.

(2) Case temperature reference point is indicated on the dimensional outline drawing.
(1)

electrical Characteristics:

(25C)

(unless otherwise specified)

@ c
@I C

V CE = 10V
200MA, V CE = 10V

UNITS

125
175

225

Volts
Volts
Volts

10

MA

20
30

= 2.0A,

MAX.

MIN.

Forward Current Transfer Ratio

TYP.
80

Collector to Emitter Voltage

c = 10 MA)
D44Q1
D44Q3
D44Q5
(l

Collector Cutoff Current' 1

(Rated

'

V CEO )

Collector Saturation Voltage' 1 )

dc

2A,

'

(1

Volts

1.3

Volts

MHZ

200MA)

Base Saturation Voltage

'

V BE(SAT)

'

C =2A, I 8 = 200MA)

Gain Bandwidth Product

(I c = 100MA, V CE = 10V)

50

Storage Time
(V,

cc

Rise

Fall

50V

C = 1.0A, I B

=I B2

100mA)

1.3

Ms

.12

.2

jus

1.7

Ms

Time

Time

-CBO

Collector Capacitance

(V r
Note:

10V,

40

MHz)

(1) Pulsed

Measurement,

300/1/sec. Pulse,

Duty Cycle 2%.

1157

pf


D44Q

n\

C
1 *\50

CE

100

-?5 C

r =7-c\

*
t

1
1

K,

?
<
=

1-4

P^MAX
'

DC CUR *ENT

tJ-55"
M

C
-

_ |

IOOC

r~f~

10
i

10

40
60
80
100
120
140
160
160
V -COLLECTOR-TO-EMITTER VOLTAGE- VOLTS

\0

200

Typical h FE vs

Maximum

DC Power

Permissible

10"

10

-COLLECTOR CURRENT-MILLAMPERES

20

Dissipation

10. Or

?c'

10

-T = 25C
I

"',"! 30C
1.0

-.

^
r

iM* '/
y

s*VT)

BE

0.1

**

_. ^^

~ r^^'

<

""

l-l

H")

/
v

"--V

:e

"^V CE

(SAT)

Maximum

Transient Thermal Impedance

(SAT)
100

f=IMHz

.01

01

0.1

10.0

1.0

I c -COLLECTOR CURRENT- AMPERES

Typical Saturation Voltage Characteristics

1

>C

roc

>IAX )C
COLL ECTOR

CURR ENT
I

XJ-i-i

-f/Z

"MAX DC
POWER
1

mSEC PULSES

10
1

300

COLLECTOR-TO-BASE -VOLTS
(COLLECTOR-TO-BASE- JUNCTION)

,SEC PULSES
S EC PULSES -J/
,SE C PULSES

100

100

10

Capacitance vs Reverse Bias Voltage

i

l\l
MAX: D44QI
CE0
VCE0 MAX D44Q3
V

"~"1
i

etc

II

\\

n
i

\r
MICA INSULATOR (.003 TMIC

093 OIA
MIN RECOMMENDED
HOLE SIZE

Safe Region of Operation

DIMENSIONAL OUTLINES
.

TERMINAL ARRANGEMENT

060 J

04Cf"1

2p
r

SOLDER LUG
(ORIENTATION
OPTIONAL)

note the thermal resistance tab to heat sink

with the mica washer is approximately
4vc/w without any thermal conducting
compound and about i25*c/w with a

thermal grease

BASE
COLLECTOR
EMITTER
4 MOUNTING TAB
I.

Z.

(ELECTRICALLY COMMON
TO COLLECTOR)
THE ABOVE PARTS WILL
REQUEST AS A SEPARATE
COST KIT * I3888I89P3

1158

Silicon

Power Pac

Transistors

HIGH VOLTAGE
D44R is a red, silicone encapsulated, power transistor designed for
and general purpose applications such as: 120 V.A.C. line operated
amplifiers; series, shunt and switching regulators; low thru high frequency inverters/
converters; t-v and other display tube deflection; and many others.
The General
various

Electric

specific

FEATURING:
RedforNPN
Very low collector saturation voltage
Excellent linearity
Fast switching

maximum

absolute

Round leads
POWER-GLAS passivated mesa
Hard solder mountdown

ratings:

D44R2
D44R5
D44R7

D44R3
D44R4
D44R6
D44R8

250
400

300
500

D44R1

(25C unless otherwise specified)

Voltages
Collector to Emitter
Emitter to Base

Compatible with JEOEC

TO -220 AB mounting registration

CEO
CES

Units

Volts
Volts
Volts

1.0

Amp.

31.25
20.0

Watts
Watts
Watts
Watts

Current
Collector (Cont.)

Power Dissipation*
Tab at 25C
Tab at 70C

>

Pt

Free Air at 25C

Free Air at 50C
Thermal Resistance
Junction to Case
Junction to Ambient

Temperature

<

1.67
1.33

R0jc

4.0

R0JA

75

C/W
C/W

>

Operating
Storage

Tj

^__

TsTG

55 to +150
<J5 tn +1 sn

Lead Soldering, 1/16" 1/32"

from case for 10 seconds max.

>

+260

c
c

NOTES:
(1)

(2)

Refer to the Safe Region of Operation curve for further information.

Case temperature reference point is indicated on the Dimensional Outline Drawing.

electrical Characteristics:

(25C unless otherwise specified)

Min.

Typ.

Max.

D44R1,3

30

75

D44R2, 4
D44R5, 6
D44R7, 8

75

90
175

30
150

300

Forward Current Transfer Ratio

@ I c = 500 ma, V CE = 10V

@ Ic =

50 ma,

V CE

= 10V

h FE
20
40
60

D44R1.3, 5, 6
D44R2, 4
D44R7, 8
Collector to Emitter Sustaining Voltage' 2
!I C

= 100

Volts
Volts

0.4

1.0

Volts

0.4

1.0

Volts

250
300

D44R3.4, 6,8

'CEO(SUS)

D44R1,2,5,7
= 300mA
I
c
= 30mA
I
B
I_ = 500mA
= 50mA
I

65

ma

Collector to Emitter Saturation Voltage*

>

&6

'CE(SAT)

Pt. 1,2,3,4,7,8

'CE(SAT)

Pt. 5

Units

h FE

1159

Electrical Characteristics (Continued)

D44R

Min.

Base to Emitter Saturation Voltage*

= 500 ma
I B = 50 ma

V CES

1.2

Volts

Ices

1.0

ma

Iebo

10

HA

Ccbo

30

pF

40

MHz

V,BE(SAT)
1

Units

'

@ Ic

Collector Cut-off Current*

Max

Fyp.

>

= Max. Rating

Emitter Cut-off Current

(V EB = 5V,Tj = 25T)
Collector Capacitance

(V CB = 10V, f= 1MHz)
Gain Bandwidth Product
(V CE = 10V,I C = 100 mA)

20

ft

Switching Times

Time
(V cc = 50V, I c = 500mA, I B1 = I B2 = 100mA)
Storage Time
(V cc = 50V, I c = 500mA, I B1 = I B2 = 100mA)
Fall Time
(Vcc = 50V, I c = 500mA, I B1 = I B2 = 100mA)

Rise

.2

.5

tr

Msec
2.5

t,

4.5
/usee

1.8

tf

3.0

^sec

NOTES:
measurement, 300

(1) Pulsed

jUsec. pulse,

Duty cycle

2%.

1.0
1

32

^/Tc

TC

in

14

o/
o/
*/

TC =85C

Tr

or

100 M SEC

<o

IO
0.1

PULSES

M SEC PULSES
1

tf\

^SEC PULSES

<A

,_,

12

^__

%v^

//
7/
/

100 c

-70c

DISSIPATION

ImSEC PULSES

70 C

DUTY CYCLE ^50%

"\

MAX DCPOWER

FORVW

S
1

COLLECTOR CURREN

=5 5C\

si

-.

MAX DC

30

16

FORWARD BIASED OPERATION

\
1

.
'

\
V
CEQ MAX D44RI, 2,5,T-
o
100

V CE

200

150

CE0

250

-COLLECTOR TO EMITTER VOLTAGE -VOLTS

MAX D44R3. 4,6,8*

01

30

50

V
CE -COLLECTOR

MAXIMUM PERMISSIBLE
DC POWER DISSIPATION

300

100

EMITTER VOLTAGE- VOLTS

SAFE REGION
OF OPERATION

JUNCTION TO AMBIENT

10

ic

40rr A

>-3

IC

I0" 4

IC

-3

IC

"2

-1
IC

TIME -SECONDS

MAXIMUM TRANSIENT THERMAL IMPEDANCE

1160

10

102

IC

1-


D44R

IOO-0

(GO
C0LLECT0R-T0-8ASE - VOLTS

COLLECTOR-TO-BASE JUNCTION
CAPACITANCE VS. REVERSE BIAS VOLTAGE

1
Tj

25 C

V BE(SAT)

nf

v CEtSAT)

^
I

.01

.05

.02
Ic -

0.1

0.2

0.5

1.0

2.0

COLLECTOR CURRENT-AMPERES

TYPICAL SATURATION VOLTAGE CHARACTERISTICS

TYPICAL
100

(-

Tj -2.

h FE VS.

~y-p

"

_i

4-H

I
j

Bio

-U1

_+

l,i

1
|

r c -COLLECTOR CURRENT -MILLIAMPERES

1161

D44R

v 10

V
S

1.0

U-

50 C

25 c

r
N
v

>

\
s

..

_i

l_Ii

10'

I c -C0LLECT0R CURRENT-MILLIAMPERES

TYPICAL NORMALIZED

Dec.

Metric

In.

Sym.

.390

B
C

.110

.120

2.79

3.05

.240

.260

6.10

6.61

D
E
F
G

.325

.355

8.26

9.02

.095

.105

2.41

2.67

.190

.210

4.82

5.34

.029

.035

.73

.89

.115

2.16

.085
.040

.060

1.02

2.92
1.52

.160

.190

4.06

4.83

.141

.145

3.58

3.68

.500

'

MM

Max.
.420

Min.

h FE VS. c

Min.

Max.

9.91

10.67

TERMINAL ARRANGEMENT

*h

-n-f
CASE TEMP

-REFERENCE

>
"

|POINT(Tc

12.7

.065

,.J~VJ
BASE
2 COLLECTOR
3 EMITTER
1

A MOUNTING TAB
(ELECTRICALLY
TO COLLECTOR

COMMON
)

1.65

U g!

POWER PAC POWER TRANSISTOR

DIMENSIONAL OUTLINES

1162

Silicon

ELECTRONIC

INACTION

wMy)i

Power Pac

SEMICOHDUCTORS

Transistors
"Color Molded"

The General Electric D45C is a green, silicone plastic encapsulated, power

transistor designed for various specific and general purpose applications,
such as: output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching regulators;
low and high frequency inverters/converters and many others.
;

FEATURING:

PNP complement to D44C NPN

Green for PNP, red for

Very low

NPN

collector saturation voltage

( 0.5V

typ.

@ 3.0A Ic)
Green

Excellent linearity
Fast switching
Round leads

Hard

absolute

solder

JEOEC TO-220 A B

mountdown

maximum

(25C)

ratings:

(unless otherwise specified)

D4SC4
D45C5
D45C6

D45C1
D45C2
D45C3

D45C10
D45C11
D45C12

D45C7
D45C8
D45C9

Voltages
Collector to Emitter

Emitter to Base
Collector to Emitter
Current!

Vceo
Vebo
VcES

-30

-45

-60

-80

-55

-40

-90

-70

Volts
Volts
Volts

Collector (Continuous)
Collector (Peak)

Power Dissipation 11
Tab at 25C
Tab at 70C
Free Air at 25C
Free Air at 50C
Junction to Case
Junction to Ambient

Temperature! 2
Operating
Storage

Pt

-4
-6

Amps
Amps

30
19

Watts
Watts
Watts
Watts

1.67

1.33
Rejc

C/W
c/w

4.2

RejA

75

T,
TsTG

-55 to
-55 to

Tl

- +260

'

Lead Soldering, Vio" %/' from

case for 10 seconds max.

+150
+150

c
c
c

Notes:
(1) Refer to the Safe Region of Operation curve for further information.
(2) Case temperature reference ooint is indicated on the rUmpnsional Outline Drawing.

electrical characteristics:

(25C)

(unless otherwise specified)

D45C3
D45C6
D45C9
D45C12
ward Current Transfer Ratio
(Vce = -IV, Ic = -0.2A)
(Vcb = -IV, Ic = -2A)
(Vce = -IV, Ic = -1A)

hpE
JIfe

1163

D45C2
D45C5
D45C8
D45C11

Min.

Max.

40
20

120

D45C1
D45C4
D45C7
D45C10

Min.

Max.

Min.

40

120

25

20

10

D45C

Electrical Characteristics (Continued)

Collector to Emitter
Sustaining Voltage' 3
(Ic

= 100 mA)

D45C1.2, 3
D45C4, 5, 6
D45C7, 8,
D45C10, 11,

-30
-45
-60
-80

V.
12

Collector Saturation Voltage""

(Ic
(Ic

= 1A, I B =
= 1A, I B =

50 mA)
100 mA)

Base Saturation Voltage

(Ic = 1A, I B = -100

D45C2,
D45C1,

3, 5, 6, 8, 9, 11,

mA)

-0.5
-0.5

Volt
Volt

-1.3

Volts

-10

pA

-100

fj.A

125

PF

Vbe< s *ti

= Rated Vces, Tj = 25C)

Emitter Cutoff Current

(V EB

= -5V, Tj = 25C)

Collector Capacitance

(Vcb

10 V, f

MHz)

Gain Bandwidth Product

(Vce = -4V, Ic = -20
Switching Times
Rise Time and Delay

IZIL

mA)

40

MHz

50

nsec

t.

500

nsec

t,

50

nsec

f,

Time

= -1A, I = -0.1A)
Storage Time
(Ic = -1A, Ibi = I
= -0.1A)
Fall Time
(Ic = -1A, Ib, = I B2 = -0.1A)
(Ic

Volts
Volts
Volts
Volts

Vce <sat>
Vce <sat>

12

4, 7, 10

Collector Cutoff Current

(Vce

Max.

Min.
)

Bl

tt

B!!

+ t,

Note:
(8)

Pulsed measurement, 300 Msec pulse, duty cycle

^2%.

32

=g5C

28

~r =40cl

24

>-hr = ft5c\

to
-

20
16

12

TC= 8 5C

lO:

I00 C

o
<

-4

-6 -8-10

-20

-COLLECTOR TO EMITTER VOLTAGE

"
u

>l

VOLTS

SAFE REGION OF OPERATION

1164

o
<
5

1
1

-40-60-80-100

o
<

-2

#/ V70"C_\|

o/

CNJ

a>

MAXIMUM PERMISSIBLE DC
POWER DISSIPATION

...

UJ

D45C

v CE

T,

-IM-C

<v

D45C2,3,S,6,e.9,tl,l2

S,
1

Tj-25-C

r,-25 c

D45C2,3,5,6,8,9.II,I2

\
\\ \\

V CE -HVOl.T

\ \\

\\

\\

\N

Tj-K c

\v

^--

'

-_^

-\
-.01

-.02

-.04

-10
l c -C0LLECTOB CURRENT- AMPERES

*4

-.06 -.08-0.

TYPICAL

FE

-oeioe-o.i

I r-COLLECT0R CURRENT- AMPERES

TYPICAL NORMALIZED

VS. c
I

h FE VS. I c

J
J

V
:I ./ z
BE SAT)

i*

b'\

CE

// /
y/

V0L1

55*
CE( SAT!

Vh

^'

_'__

>

,-2S'C

i c /i b-

z^X

j" C

01
-.01

-.02

-*>4 -*>6Oe-0Ll

-.01

io

-.02

-1.0

-.04 -.0G-06-O.I

I--BA3E
I -

CURRENT-mA

COLLECTOR CURRENT- AMPERES

TYPICAL INPUT CHARACTERISTICS

TYPICAL SATURATION VOLTAGE

CHARACTERISTICS

1165

- v

"<*:

D45C
junction to ambient

IV

--500 mA
1

TIME -SECONDS

MAXIMUM TRANSIENT
THERMAL IMPEDANCE

VOLT

VCE
V CE

-2.5VOLTS

If

'

7
'/

I
/

,'
\

-10000

li

JS

1
1

If
ISO C

Tj

\
'

25 s

1^
/

-55'C

/
I

-Q2
V BE

J j

-0.4

-0.6

75

100

-4
,

0.8

TEMPERATURE- 'C
-1.0

-1.2

_BA SE TO EMITTER VOLTAGE - VOLTS

TYPICAL CEO
l

Ices VS.

TEMPERATURE

TYPICAL TRANSCONDUCTANCE
CHARACTERISTICS
Dec

Sym.
Min.

DIMENSIONAL OUTLINES
TERMINAL ARRANGEMENT

BASE

2 COLLECTOR

EMITTER
4 MOUNTING TAB
3.

(ELECTRICALLY COMMON

TO COLLECTOR)

Metric

MM

Max.
.420

Min.

Max.

9.91

10.67
3.05

.390

B
C

.110
.240

.120
.260

2.79
6.10

.325

.355

8.26

E
F
G

.095
.190

.105
.210

2.41
4.82

.029

.035

.73

.89

.115

.085
.040

2.92

.060

2.16
1.02

.160

.190

4.06

1.52
4.83

.145

3.58

3.68

M
M
1166

In.

.500

6.61
9.02

12.7

.141

__

.065

2.67
5.34

1.65

Silicon

Power Pac

Monolithic Transistor

Very High Gain Darlington Amplifier

D45E
"Color Molded"

COMPLEMENT TO D44E

TYPICAL APPLICATIONS:

Equiv. Circuit

absolute

Driver

Switch

Regulator

Audio Output

Capacitor Multiplier

Relay Substitute

Solenoid Driver

Oscillator

Inverter

maximum

Power Supply

ratings:

JEDEC TO-220 AB

Servo- Amplifier

(25C)

(unless otherwise specified)

D45E1

D45E2

D45E3

^CEO
^EBO

-40

-60

-80

Volts

rpo

7
-80

Volts

-40

Units

Symbol

Voltages
Collector to Emitter

Emitter to Base
Collector to Emitter

-60

Volts

Current^ 1 )
Collector (Continuous)

-10

Amps

-20

Amps
Amps

Collector (Peak)

(50% duty

cycle,

25 msec, pulse width)

Base (Continuous)

Power Dissipation (D
Tab at 25C
Free Air at

Watts

50

Watts

1.67

25C

Thermal Resistance

Junction to Ambient

75

C/W
c/w

+150
+150

c
c

2.5

Junction to Case

R0JA

Temperature^ 2 )
Operating

-55 to

Storage

-55 to

STG

Lead Soldering, 1/16" 1/32"

from case for 10 seconds max.

+260

NOTES:
(1)

Refer to the Safe Region of Operation curve for further information.

is indicated on the Dimensional Outline Drawing.

(2) Case temperature reference point

1167

D45E

(25^)

electrical characteristics:

(unless otherwise specified)

D45E1
D45E2
D45E3
Forward Current Transfer Ratio
(I
c = 5 A, VCE = 5V)

(3)

Typ.

Min.

1000

'FE

Max.

Typ.

Min.
Collector to Emitter Voltage
(I

= 100mA)D45El

-40

V,

CEO

D45E2
D45E3

-80

Collector Saturation Voltage

C =-5.0A, I B

C =-5.0A, I B

Volts

"CE(SAT)

-1.5

Volts

"'CE(SAT)

-2.0

Volts

BE(SAT)

-2.5

Volts

3)

Base Saturation Voltage

(I

Volts

=-10mA)
(I
=-10.0A,I
c
B =-20mA)
(I

vons

-60

=-10mA

'

Collector Cutoff Current

(VCE = Rated
(VCE = Rated

VCES Tj
Vces ;Tj

= 25C)
= 150C)

CES

-10

txA

^ES

-1.0

mA

^BO

-1.0

juA

-CBO

220

pF

0.6

MS

2.0

MS

Emitter Cutoff Current

(VEB =-7V)
Collector Capacitance

(VCB = 10V,f=lMHz)
Switching Times

Delay Time and Rise Time

(I

C =-10A,I B1 =-20mA)

Time
(I
=-10A,I
c
B1 =I B2 =-20mA)
Fall Time
(I
c =-10A,I B1 =I B2 =-20mA)
Storage

NOTE:

(3) Pulsed
(4) Pulsed

us

0.5

measurement, 2m sec pulse width, duty cycled 2%.

measurement, 300 sec pulse width, duty cycle<2%.

4.0
l

uj2.0

V B E(S

T.

"?!5=p.

r-

T,

Ji-ivw'*

40C

-1

500

-- -

... -

~*

2?*S S
^^

r,f25C

--

ij-isoj c_
_^rt

--::#!
"-

~"

**

-4A \L
'CE(SAT)

r-'

Tj=I5CC^0.5
0.5

2
l

10

-COLLECT0R CURRENT-AMPERES

TYPICAL SATURATION VOLTAGE CHARACTERISTICS

1168

20

D45E

QOOI

20

10.0

10

0.1

O.OI

AMPERES
c -COLLECTOR CURRENT-

TYPICAL GAIN CHARACTERISTIC

100

-LUI

JUNCTION TO
AMBIENT

,y

10

u
u
z
<

JlJNCTI ON

TC

CAS E

2
<

2
(S

X
1-

1UJ

1.01
IT

on
,-5

lO"*

10

10"'

I0

I0

TIME -SECONDS

TRANSIENT THERMAL IMPEDANCE

I
10

20

70
60
50
40
30
Vqe -COLLECTOR TO EMITTER VOLTAGE-VOLTS

MAXIMUM PERMISSIBLE DC POWER

1169

DISSIPATION

80

D45E
20
10

1.0

01

_L
rf

oc

15

25"C

>OI

-40C

IE

0. 4

PULSED MEASUREMENT
PULSE WIDTH =S300/us
DUTY CYCLE 2%
VCE =2V

0. 9

1.

2.0

1.6

2.4

2.6

VBE " BASE T0 EMITTER VOLTAGE -VOLTS

TYPICAL TRANSCONDUCTANCE CHARACTERISTICS

PEAK COLLECTOR CURRENT

20

-^lOms PULSES

10

MAXIMUM DC
COLLECTOR CURRENT

M^

<

DC

,-1 ms PULSES
^lOOyas PULSES

\\

V
POWER ^ ^

DIS SIPATION

X
2

<

Hi

25"C

<

_sLs'

\
\ \

50%

\>

\j

\ \

In

\ \\!
\
\
=

2"-2|
x x

cf

5 \ \N

in

Tc

rr>

\\
\\

1-

q:

\\ \

DUTY CYCLE

t-

V \

\\

'

\
\\ \

\\

'

'

\\

\i

\k \
i

01

1.0

\Y
\\

80
VC - COLLECTOR TO EMITTER VOLTAGE -VOLTS

SAFE REGION OF OPERATION

1170

Silicon

Power Pac

Transistors
"Color Molded"

D45H

a green, silicone plastic encapsulated, power

and general purpose applications,
output and driver stages of amplifiers operating at frequencies
to greater than 1.0 MHz; series, shunt and switching regulators;

The General

Electric

is

transistor designed for various specific

such

as:

from DC
low and high frequency inverters/converters; and many

others.

FEATURING:
to D44H NPN
Green for PNP, red for NPN
Very low collector saturation voltage
(-0.37 V typ. @ -5.0 A I c )

PNP complement

Excellent linearity

JEDEC TO-220 A B

Fast switching

Round

leads

Hard solder mount down

TERMINAL ARRANGEMENT

maximum

absolute

ratings:

V CEO
V EBO

Collector to Emitter

Emitter to Base

Current

<

-30

-45

-5

-5

-60
- 5

-80
- 5

-U,
"71zo~T
Tiolgo

CASE
;el* +
REFERENCE
F
r*~RE
POINTIV

Volts
Volts

>

I.

Z.
3.

CA<

TEMP.

BASE
COLLECTOR
EMITTER

V MOUNTING TAB
(ELECTRICALLY

COMMON

TO COLLECTOR J

Collector (Continuous)
Collector (Peak)

Power Dissipation'

<

10

<

20

Amps
Amps

111

liL

>

PT

Tabat25'C
Tab at 70<C
Free Air at 25-C
Free Air at SO'C

Thermal Resistance' 2

50

*
<

32

Watts
Watts
Watts
Watts

1.67

1.33

Dimensional Outlines

R0JC
R0JA

Junction to Case
Junction to Ambient

Temperature' 2

4J

(25c unless otherwise specified)

D45H1 D45H4 D45H7 D45H10

D45H2 D45H5 D45H8 D45H11
D45H9 D45H12

Voltages

2.5

75

'

Tj

Operating
Storage

Lead Soldering, 1/16" 1/32"

from case for 10 seconds
max.

'

T S tg

TL

-55
-55

to

to

C/W
"C/W

+150
+150

C
c

+260

NOTES:
(1)

(2)

Refer to the Safe Region of Operation curve for further information

Case temperature reference point is indicated on the Dimensional Outline Drawing.

electrical characteristics:

(25c unless otherwise specified)

Min.

Forward Current Transfer Ratio

D45H1,4,7,
(V CE = -1V,I C =-2A)
D45H2, 5, 8,
D45H1.4.7,
D45H2, 5, 8,

(V CE = -1V, I C = -4A)

10

9,12

11.

10

9,12

11.

Collector to Emitter
Sustaining Voltage' 3 '
D45H1.2
(I c = -100 mA)

D45H4, 5
D45H7, 8, 9
D45H10, 11

35

60
20
40

VCEO (SUS)
,

12

Collector Saturation Voltage' 3 '

D45H2,
(I C = -8A, I B = -0.4A)

V CE (SAT)

5, 8, 11

D45H1,4,7 10
c = -8A, I B = -0.8A)
Base Saturation Voltage' 3
(Ic = -8A,I B = -0.8A)
On-Voltage
(I c = 10 mA, V CE = 2V)
Collector Cutoff Current
(V CE = Rated V C eo. Tj = 25*C)
Emitter Cutoff Current
(V EB =-5V,Tj = 25 C)
(I

hFE
h FE
h FE
hF E

9,12

Max.

-30
-45
-60
-80
-

_
-

Volts
Volts
Volts
Volts

Vce'SAT)

-1.0
-1.0

Volt
Volt

V BE 'SAT)

-1.5

Volts

0.54

0.64

Volts

-10

HA

-100

MA

'

V BE (on)
!cBO
lEB

1171

D45H
Collector Capacitance
(V CB =10V,f= 1MHz)

Typ.

c CBO

Gain Bandwidth Product

(V CE = -10V, I c = -500 mA)
Switching Times
Rise Time and Delay Time
(I
C = -5A, I B1 = -0.5A)
Storage Time
(I C = -5A,I
B1 =I B2 = -0.5A)
Fall Time
(I C = -5A I
B1 = I B2 = -0.5A)

40

MHz

135

nsec

500

nsec

100

nsec

ft

td+t r

tf

>

pF

230

NOTE:
(3) Pulsed

measurement, 300

duty cycle

jUsec pulse,

2%.

045H
PARTS

".V,

,...,,.

2,5,8,11

Tj- I50"C

Tj .ISO-C

- =

-;.

\
\

VCE

\ \

-9V

25 C

Tj -

>^~-

^"

K^

t,.-.c

-Tj -

-55'C
S

T'
-

COLLECTOR CURRENT- AMPERES

ic-collector current- amperes

TYPICAL GAIN CHARACTERISTICS

TYPICAL GAIN CHARACTERISTICS

1

II

PEAK COLLECTOR CURRENT

MAX. DC
COLLECTOR
CURRENT

,2S ' C

|
2

E2r

I40*c\
~-

-i

<

tc .zo*c

<

!
* i

Tc as*c

<

MAX. DC
"

POWER DISSIPATION

|"

,21
Ji

3l 2

Sj lil

T .IOO*C
c

^
\

DUTY CYCLE
5 50%
T

STO*C

^r

\ ^V
2

L_

\
-20
V

-30
-40
-50
-60
-TO
CE -COLLECTOR- TO- EMITTER VOLTAGE- VOLTS

r ,|\

-SO

MAXIMUM PERMISSIBLE DC
POWER DISSIPATION
-Tj

I50C
= =

V CE

!\

-COLLECTOR TO EMITTER VOLTAGE-

SAFE REGION OF OPERATION

l-r+++

v BE(SAT]' I C / lB" -\
l

L
1

JUNCTIO WTO
AMBIEN1

^jf

10
t

ft

'

V CE( SAT ic'iE

O.I

^ 3 *'
etc SAT)

/I B >IO
0.01

0.001
10 "

-O.I

-1.0

-10.0

Kr*

10" s

III

KT

10"'

10

'

TIME -SECONDS

I c -C0LLECT0R CURRENT- AMPERES

TRANSIENT THERMAL IMPEDANCE

TYPICAL SATURATION
VOLTAGE CHARACTERISTICS
1172

3*

IO

Silicon

Diodes

This family of General Electric Double Heatsink Diodes are very high speed switching
diodes for computer circuits and general purpose applications. These diodes incorporate
an oxide passivated epitaxial pellet with a raised solid silicon anode contact.

These DA-series diodes exceed the electrical and mechanical requirements of the following

JEDEC devices

DAI 702

DAI 701

Standard Cathode Band

DAI 703

and Body Marking

1N914

1N914A
1N916

1N916A
1N4148
1N4149
1N4151
1N4152

1N4151
1N4152
1N4153
1N4154
1N4454
1N4727

1N4153
1N4154
1N4446
1N4447
1N4448
1N4454
1N4727

Colors:

Violet
DA1701
Yellow
DA1702

Green
DA1703
Black
DA1704
Body marking will consist

1N4152
1N4154
1N4727

only of the

GE

symbol
0.140

oieo

0.022
0.016

absolute

maximum

ratings:

Voltage
Reverse

*Kf

Rectified

h-,
y~^

Q675
0-060
0060

O32i0O2 DIA
CATHODE END-

(25C)

NOTE: ALL DIMENSIONS

DAI 701

DAI 702

DAI 703

DAI 704

100

75

40

25

Current

Average

GE

-600 150.
4

to
to

+175
+200

Volts

Amps
mA/C

1.1-

65
-65

INCHES

mA
mA
mA

200-

Recurrent Peak Forward If peak

Forward Steady State D-C
Peak Forward Surge (1m sec)
Derate above 25C
Temperature
Operating
Storage

IN

C
C

Power Dissipation
Heatsink Spacing
From End of Diode Body
0.125 inches
0.250 inches
0.500 inches

Note

1:

at

Power Dissipation
2S*C (roW) (Not* 1)
700
550
460

Steady State Thermal

Resistance

(C/mW)

0.250
0.319
0.380

dissipation is denned as the heat dissipating capability of the diode when operated at 25 C as an
The power rating is
signal device within the absolute maximum voltage and current ratings specified above.
can be used to
(C/mW)
thermal
resistance
state
steady
The
based on a maximum junction temperature of 200C.
temperatures
other
at
ratings,
current
voltage
and
maximum
the
capabilities,
within
dissipating
calculate the power

The maximum power

A-C

than 25 C.

1173

DAI 701 -4

electrical characteristics:

DAI 701
Max.

Forward Voltage
(If = 0.100mA)

=
=
=
=
=

(If
(Ip
(If
(If
(If

10
30
50
100

Min.

0.490
0.590
0.700
0.780
0.830
0.935

mA)
mA)

1.0

(25C) (unless otherwise specified)

mA, Note 2)
mA, Note 2)
mA, Note 2)

0.550
0.650
0.810
0.930
1.00
1.10

DAI 702
Max.

Min.

0.490
0.590
0.700
0.780
0.830
0.935

0.550
0.650
0.810
0.930
1.00
1.10

DAI 703
Max.

Min.

0.490
0.590
0.700
0.780
0.830
0.935

0.550
0.650
0.810
0.930
1.00
1.10

DA 1704
Min.

Max.

0.460
0.570
0.680
0.740
0.770
0.820

0.570
0.680
0.850
1.00
1.10
1.30

Volts
Volts
Volts
Volts
Volts
Volts

Reverse Current

(V R = 15 Volts)
(V*

50
100

20 Volts)

(V R = 30 Volts)
(V H = 30 Volts, T A =
(V R = 50 Volts)

150' C)

150" C)

(Vr = 50 Volts, T A

30
30
50
50

(V K = 75 Volts)

50
50

75

100,uA)

nA
nA
nA
P.A

nA
/uA
/iA

Breakdown Voltage
(Ir = 5 M A)
(Ir

30
30
50
50

40

25

Volts
Volts

100

Stored Charge
(If

= 10mA, Note 3)

Peak Forward Voltage

(If

= 50mA,

tr

40

40

40

3.0

2.75

1.75

1.75

Volts

1.0

1.0

2.0

3.0

pF

PC

Vp

lOnS, Note 4)

Capacitance

40

Co

(Vr = 0V,f = 1MHz,

Signal Level

Note
Note

2:
3:

Note 4
Note 5:

= 50m V, Note

5)

Pulsed measurement with pulse width <350/i Sec, duty cycle <2%.
Test method per JEDEC suggested standard number for direct measurement of diode
stored charge, B-Line Electronics Corporation stored charge meter Model QS-3 or equivalent.
Measured per EIA Standard RS-286.
Capacitance as measured on Boonton Electronics Model 75A Capacitance Bridge (or equivalent).

1174

Silicon

Signal

Diode

The General Electric type DEI 04 is a very low leakage

diode for general application. This diode incorporates an
oxide passivated planar structure built in a high resistivity
grown on a low resistivity silicon substrate.
makes possible a diode having high conductance, low leakage and low capacitance, combined with
improved uniformity and reliability. Type DEI 04 is housed
epitaxial layer

This structure

in a standard glass diode

absolute

DUO

maximum

package.

ratings: (25C)

(unless otherwise specified)

Current

.153
1.00

mA
50 mA
225 mA
2000 mA

Average Rectified

75

Forward Steady-State DC
Recurrent Peak Forward
Peak Forward Surge (1.0 /usee pulse)
Power

250

mW

MIN.

=3Q^

3
z

022

-CATH00E BAND
ALL DIMENSIONS ARE IN INCHES AND ARE

NOTES!

Dissipation (25C)

1.00 -

1Z8

MIN.

DIA.
r-

079

MA .060
MAX.

.018
DIA.

REFERENCE UNLESS TOLERANCED.

Temperature

-65
-65

Operating
Storage

+175C
to +200C
to

2.

LEAD DIAMETER NOT CONTROLLED WITHIN

.050" OF

THE BODY.

Derate 1.43 mW/C above 25C based on Tj = 200 C.

electrical characteristics (25 C)

(unless otherwise specified)

SYMBOL
Forward Voltages
IF =
10 nA
I F = 100 mA
IF =
1.0 mA
IF =
10 mA
IF =
50 mA
I F = 100 mA (Note

VF

1)

MAX.

MIN.

UNITS

0.520

0.620

Volts

0.610

0.700

Volts

0.700

0.790

Volts

0.790

0.890

Volts

0.875

1.000

Volts

0.930

1.100

Volts

100

Reverse Current

VR
VR

= 20 Volts
= 20 Volts, T A = 150C

Ir

PA
nA

20

Breakdown Voltage
I

R =

5 juA

Bv

40

Volts

Capacitance

VR

Volts (Note 2)

pF

Co

NOTES:
1.

2.

Pulsed measurement (pulse width < 300jusec, duty cycle < 2%).
Capacitance as measured on Boonton Model 75A, capacitance bridge at a signal level of 50

1175

mV

and a frequency of

MHz.

Silicon

DE11Q, DElll,
Signal

DEU2, DE113,

Diodes

DE114.DE115

These General Electric Signal Diodes are very low leakage diodes for
general application. They incorporate an oxide passivated planar
structure built in a high resistivity epitaxial layer grown on a low
resistivity silicon substrate. This structure makes possible a diode
having high conductance, low leakage and low capacitance, combined with improved uniformity and reliability. They are housed in
a standard D HD glass diode package.

absolute

maximum

ratings: (25C)

(unless otherwise specified)

Current

mA
mA
mA
2000 mA

Average Rectified

75
50
225

Forward Steady-State DC
Recurrent Peak Forward
Peak Forward Surge (1.0 /usee pulse)
Power
Dissipation (25 C)

250

mW

NOTES:

Temperature

I.

Operating
Storage
*Deiate

-65to+175C
_65

1.43mW/C temperature above 25C based on Tj max.

electrical characteristics (25C)

Forward Voltage (V F )
(I F =
10M)
(I F = 100 juA)
(I F = 1.0 mA)

= 10
(I F =
50
(I F = 100
(I F

mA)
mA)
mA)

MAX

+200C

= 200 C

DE111
MIN.

DE112

MAX.

0.590

0.690

0.680 0.780 0.680

0.780

0.780 0.880

(Note 1)

0.880

1.200

0.780 0.880

0.880

MIN.

0.500 0.600 0.500 0.600

0.590 0.690

2.

unless otherwise specified)

DE110
MIN.

to

ALL DIMENSIONS ARE IN INCHES AND ARE

REFERENCE UNLESS TOLERANCED.
LEAD DIAMETER NOT CONTROLLED WITHIN .050" OF THE BOO

1.200

DE113

MAX.

MIN.

MAX

1.0

1.0

100
0.250

0.500

DE115

DE114
.

MAX

MIN.

MIN.

MAX. UNITS

0.500 0.600 0.500 0.600 Volts

0.590 0.690

0.590 0.690 Volts

0.680 0.780 0.680

0.780 0.880

0.880

1.200

0.780

Volts

0.780 0.880 Volts

0.880

1.200

Volts

Volts

Reverse Current

(I R )
= 20 Volts)
= 20 Volts, T A = 150 'Q
= 30 Volts)
= 30 Volts, T A = 150' c)
=
50 Volts)
(Vr
(V R = 50 Volts, T A = 150 *C)

(V R
(V R
(V R
(V R

40

2.0
4.0

10.0

200
0.500

5.0

250

_
_
_

PA
/iA

40

Volts

pF

1.0

2.0

nA
fiA

2.0

nA

4.0

/iA

Breakdown Voltage (Bv )

(I R

= 5 mA)

Capacitance (C

(V R = 0) (Note 2)
NOTES:
1.

2.

Pulsed measurement (pulse width S 300 Msec, duty cycle < 2%).
Capacitance as measured on Boonton model 75A capacitance bridge

at a signal level

1176

of 50

mV

and a frequency of

mE.

Low Current

DT230 SERIES

Rectifier

The General

Electric

DT230 250 milliampere rectifier is a planar epitaxial passiin the D035 double heatsink package. The DT230 is designed

vated rectifier sealed

primarily for the industrial and consumer markets.

Features

Glass Package
Hermetic Seal
Capable of 15 lb. Lead Pull
package
Proved Design GE innovated
Silicon Anode Contact Pellet
Eutectic Bond Between Pellet and Slugs

DHD

Typical Applications

Color Television Difference Amplifier Clamp

Arc Protection Color Television Video Output

Low Current Power Supply

Rectification

Operational Amplifiers

Measurement Systems
Arc Suppression

DC to DC

CATHOOE BAND

WHEN APPLICABLE

Converters

Free Wheeling Rectifiers

Telephone Equipment Switching

maximum

ratings (25C)
DT230

Reverse Voltage Working

Peak, Vrm, DC, V K
Average Forward Current
50C
Io
Peak Forward Surge Ifsm Non-

(unless otherwise specified)

HI

250
250

250
250

100
100

50 Volts
50 Volts

mA

-250-

Repetitive .0083 sec. half sine

150
150

200
200

wave

350-

Maximum Average Power

-65
-65

Junction Temperature Storage Tstg

Temperature Operating Junction T)

to 200
to 150

mW
C
C

characteristics
DT230

Maximum Forward

Voltage Drop V F
Ip = 250 ma
If 200 ma
Maximum Reverse
Current
Vkm

Part

No.

@ 25 C

HI

1.1

1.1
1.0

25C
100C
Reverse Recovery Time, trr
Ih
Ik

300-

Maximum
Capacitance
Ve - Co Typical

1.1

1.1

Volts

mA

AlA

Volts

30-

ijsec

300-

ijsec

Typical

1.1

.pF
-pF

Maximum
1177

DT230

0.5

0.4

0.3

0.2

x
i-

0.1

l/

l/ -

\,
3/
5
3/
4
8
/{j
4
LEAD LENGTH FROM DEVICE BODY

TYPICAL THERMAL IMPEDANCE

VS. LEAD LENGTH

AVERAGE FORWARD CURRENT

AMBIENT TEMPERATURE
SINGLE PHASE OPERATION

VS.

u
10
CM

foo

o
N
4
a:

10

O
UJ
1-

in

2!

75

10

Ta'C

!5

IS

175

INSTANTANEOUS FORWARD VOLTAGE -VOLTS

FORWARO TEMPERATURE COEFFICIENT

TYPICAL REVERSE CURRENT

VS. TEMPERATURE AT V RM

mWC

TYPICAL F VS. VF AT TA
TYPICAL P VS. T.C.
l

1178

Silicon

Diodes

02800,5,6

DZ805 and DZ806 are high-speed, silicon signal diodes

purpose applications. The DZ800 series has controlled conductance

General Electric types DZ800,

intended for general

characteristics for stabistor applications.

maximum

absolute

ratings:

(25C)

(unless otherwise specified)

Volts
Volts
Volts

Voltage

DZ800
DZ805
DZ806

Reverse

15
25

Current

Forward Steady State DC

Recurrent Peak Forward

70
135

mA
mA

150

mW

Power
Dissipation

0.036 (MAX) OIA.-1

CATHODE END

Temperature

-55

Operating

electrical characteristics:

(25C)

to

125

(unless otherwise specified)

Typ.

Min.

Max.

Forward Voltage
(If
(If
(If
(If
(I r

= 0.100 mA)
= 1.0 mA)
= 2.0 mA)
= 10 mA)
= 100 mA, Pulsed)

Vk,
Vfi
Vf,
Vfi
Vf,

0.550
0.690
0.720
0.800
1.300

0.430
0.530
0.560
0.640
0.800

Volts
Volts
Volts
Volts
Volts

Reverse Current

DHD800 (Ve = 2V)

DHD805 (V B = 12V)
DHD806 (V R = 22V)

2.0
2.0
2.0

Ir
Ib
Ik

pA.
iiA

pA

Breakdown Voltages

DHD805
DHD806

(Ie
(Ie

= 5 m A)
= 5 m A)

Bv
Bv

Volts
Volts

15
25

Stored Charge
(If

10

mA)

pC

40

Q.

Capacitance

(V R

OV)*

pF

Co

*Capacitance as measured on Boonton Model 75A capacitance bridge at a signal level of 50

1

MHz.

1179

mV

and a frequency of

WATER-COOLED

G6 SERIES
Heat Exchanger

The General

Electric Type G6 water-cooled heat

exchangers are designed for the efficient cooling of
high power silicon controlled rectifiers
Special features of this heatsink are
Light weight, compact design.
High efficiency at low coolant flow rates
Double-side cooling of cell for maximum

current capability.
Factory assembled and tested for high reliability.

OUTLINE USING G6 TO COOL TWO 1" PRESS PAKS

IN VOLTAGE DOUBLER CONNECTION

TERMINAL

LEAD LENGTH FROM

THIS POINT APPROX K

DECIMAL

METRIC

MM

INCHES

MIN.

MAX.

MIN.

MAX.

9.100

9.400

231.14

238.76

7.620

7.880

193.55

200.15

.760

.120

2.950
1.360

FIEF.

S.075

5.325

.375

REF.

.137

9.000

.130

REF.

.153

18.80
3.05

74.93
34.29

128.95
9.53
3.48

DECIMAL

19.30

METRIC

MM

INCHES

M
P

MIN.

MAX.

MIN.

MAX.

1.540

1.585

39.12

40.26

1.235

1.285

31.37

32.64

Ft

1.845

REF.

46.86

REF.

3.665

3.985

93.09

101.22

1.030

1.160

26.16

29.46
10.03

135.26

T
U
V

REF.

3.30

REF.
REF.

3.89

REF.

228.60

.6 IS

.635

15.62

.490

.510

12.45

12.95

.432

.442

10.97

11.23

REf.
16.13

1180

.380

.395

9.66

.115

.135

2 92

.406

REF.

10.31

3.43

REF.

GPM=

TWO
*i

.02

3.8

LITERS/MINUTE

CELLS, THREE POSTS

WATER AS COOLING FLUID

ONE CELL, TWO POSTS

CASE TO EXCHANGER

DOUBLE SIDE COOLED

DATA FOR DEPOSIT FREE WATER PASSAGEWAY

'

DATA FOR DEPOSIT FREE WATER PASSAGEWJ

I

II

.2

III
8

.6

I.O

THERMAL RESISTANCE VS. FLOW RATE

(ONE CELL, TWO POSTS)

1.

L_

.8

.6

.4

2.

THERMAL RESISTANCE

CURRENT RATINGS VS DUTY

CYCLE AT 60 Hi
EXAMPLE
WAVEFORM DESCRIPTION
11
I

-I0-

FLOW RATE

CYCLE AT 60 Hi

<*., V/V

EXAMPLE
WAVEFORM DESCRIPTION:

4
"

ICYC .E/25H DUTY CYCLE

BUS" Ip/vT

VS.

FULL CYCLE CONDUCTION RMS

CURRENT RATINGS VS DUTY

4
6"

(TWO CELLS, THREE POSTS)

z~

I.O

FLOW RATE- GALLONS /MINUTES

FLOW RATE -GALLONS/MINUTES

\_

CYCLE /25% DUTY CYCLE

10

_ 20
40
60
BO

-2040
60

5*

80
IOO
1.

NOTES:

WATER FLOW RATE-I.OGPM

I.

2.

3.
4

360"C CONDUCTION (TWO CELLS)

Imis-CURRENT DURING CONDUCTION INTERVAL
WATER TEMF ERA ruR E-4O' c
J
6
8
K)
20
I

IN

1.0

DUTY CYCLE

DUTY CYCLE
3.

WATER FLOW RATE - 1.0 SPM

3-lRMS CURRENT DURING CONDUCTION INTERVAL

60

80

IN

20
PER CENT

100

PER CENT

4.

WELDING RATINGS SCR TYPE C350 (TWO CELLS)

-

WELDING RATINGS SCR TYPE C380 (TWO CELLS)

-

I
400
300
RMS CURRENT -AMPERES

300
RMS CURRENT- AMPERES
250

5.

PHASE CONTROL RATINGS SCR TYPE C350

(TWO CELLS)
-

1181

PHASE CONTROL RATING - SCR TYPE C380

(TWO CELLS)

..

WATER-COOLED
Heat Exchanger

G9/G10

The

two

(2)

type

C500

G9/G10

water cooled switches are designed for the efficient cooling of

power

series

thyristors

AC

connected as an

switch

^^r^
rWT

Features:

34

Insulating mounting base containing built-in cooling fluid

1)

(of

passageways
for metallic

water piping.
K

Nickel-plated power connection tangs.

3)

Maximum Allowable

RMS

IUk

-"M
i

Ratings

Maximum Allowable Peak

Switch

O _^j>
1

o
Screw-on connections

2)

= 5sJ_ l

Volts Off-State (PFV, PRV)

Depends on Choice

Current (Sinusoidal Waveform)

Peak One-Cycle Surge, 60 Cycles

) of Particular

Junction Operation Temperature

Storage Temperature

-40C

Maximum Ambient Temperature

Maximum Water

C500

Series Thyristor

65C

to

65C

Pressure

60 psig

Maximum Water Temperature

50C

Environmental Capabilities

Water Quality

Tap Water With

Salt Spray

Test Condition

Method 106

MIL-STD-202 (See Note

Moisture Resistance

Flammability

of

No

Additives (See Note

1)

of Methods 101 of Standard

MIL-STD-202

2)

Materials are UL Rated, Flam. Class S.E. (Self Extinguishing)

Characteristics

Maximum On- State Voltage

On-State Losses

Transient Thermal Impedance

Water Flow

):

(b)

............

shall have:

neutral or slightly alkaline reaction, i.e., a

See Figure 3

This test simulates a realistic condition which may occur when

is stored or ts inoperative under high humidity
conditions. When the .switch is to be placed in operation, all sur-

equipment

pH between

7.0 and 9.0

face moisture must be eliminated before power is applied,

otherwise catastrophic electrochemical failure can be induced.

chloride content of not more than 20 parts per million; a

nitrate content of not more than 10 parts per million; and a
sulphate content of not more than 100 parts per million.

(c)

total solids content of not

(d)

total hardness, as

250 parts per mi

See Figure

17 Pounds

Quality of Water - Water

(a)

Specifications

See Figure 2

Weight

Note

Refer To Particular

J C5

(Per Device)

Steady State Thermal Resistance

Pressure Drop Vs

1 1

Coordination between cooling water and the prevailing humidity

is necessary to avoid condensation on the water
jackets and

more than 250 parts per million.

electrical insulation.

Ordinarily this is no problem with 40C

cooling water. In some cases with lower temperature water,
humidity control has been necessary to stop condensation
completely.

calcium carbonate, of not more than

ion

No

additives are to be used without prior approval from the switch

manufacturer's Application Engineering department.

1182

G9/G10

EXCHANGER
CELLS,
8 AS
SINGLE PHASE
180* CONDUCTION ANGLE
(DOUBLE SIDE CODED

GIO HEAT

u
z

'

1
1

WITH C5
08

i!
.06

<
I- <

in
1

6PM

3.8

LITERS/MINUTE

.04
.4

.6

.8

4.0

2.0

I.O

WATER FLOW - GALLONS PER MINUTE

Figure

1:

Steady State Thermal Resistance

.6

0.1

Figure 2:

Transient Thermal Impedance

.8

1.0

2.0

4jO

GALLONS PER MINUTE FLOW RATE

POWER ON TIME

Figure 3:

1183

Pressure Drop For

Water Flow

OUTLINE DRAWING: G9 AC CONTACTOR

G9/G10

<?
C6LL B

Si
eL.EK\EKlT*-R-

OKI

UOLDCS

.7^0 M1K1 I.1K CLE

Fl*T "bo* IkOOuT tl-oT

OUTLINE DRAWING: G10AC CONTACTOR

.?50 -

u-

...

3.2

SO

-.250

t.o

1
J

^TERM.

li

.ISO

*.""'1

"*53
f"L/VT

.500 StaTtel;
M,N D.\ CL*.^
5UR *?iOU7 SLOT

ilrP"

-i

<o\r-

ELEVENTARf

"(.

IQK,

e
Q3-'

/
BOLT
El-SCTRICAULT

COKJMECTED
TO TERM.
I

METAL

WAT.
MTG

Block

CO**

Pl>,TE

1184

G9/G10

MOUNTING & HANDLING

1)

Visually examine the switch before

not been

2)

damaged during shipping

if is

mounted

to see that

it

has

or handling.

low-resistance electrical connection must be

made

to the

power

avoid feeding heat back into the SCR's. The

connections
power terminals may be lightly abraded with *400 grit emery paper,
wiped clean and contact grease added to reduce oxidation. (Power
terminals are nickel-plated.)
in order to

3)

When mounting the insulating base, the following precautions should

be taken to avoid distorting the plastic part.
a) The mounting surface

is

to be flat within

0.030".

which are used to hold the switch into the

equipment shall be used with a flat washer against the
plastic base. Torque values shall not be exceeded.
(8 ft-lbs max for 1/4" screw) (15 ft-lbs max for 5/16"
screw) Flat washer should be 0.7" to 0.9" OD.

b) Bolts or nuts

4)

For pipe connections, a sealing agent such as teflon joint compound

be used in order to limit the torque needed in order to get a

shall

water-tight joint.
5)

Prior to shipment or exposure of switch to freezing temperatures, the

water is to be purged from the switch and cooling base to avoid

freeze-up with its likely damage to the parts in the assembly. The
water may be removed by blowing it out with dry air. Care should
be exercised to limit the applied air pressure to less than 60 psig
(rated pressure for the assembly). If hoses are connected to the switch
assembly, it is recommended that they be removed before purging to
avoid water backfill.

I
1185

Water-cooled
G11

SERIES

Heat Exchanger

The General Electric Type Gl 1 water-cooled heat exchangers are designed

cooling of C300 series high power silicon controlled rectifiers and rectifier

for the efficient

diodes.

FEATURES:
Basic exchanger suitable for use in AC switches
and parallel applications of diodes and SCR's.
Unique large surface area coolant passage provides high thermal conduction at low flow rates.

ratings

and

Light weight, compact design factory assembled

and tested.
Double-side cooling of cell for maximum current
capability.

characteristics:

Steady State Thermal Resistance

Pressure Drop Vs Water Flow
Storage Temperature

Maximum Water
Maximum Water

See Figure 1
See Figure 2

-40C to 100C
100C

Maximum Ambient Temperature

Temperature.

Weight

QUALITY OF WATER - WATER SHALL HAVE:

1) A neutral or slightly alkaline reaction, ie. a pH between

3)

7.0 and 9.0

2)

Pressure

4)

A chloride content of not more than 20 ppm; a nitrate

content of not more than 10 ppm; and a sulphate content of not more than 1 00 ppm.

250 ppm.

No

additives are to be used without prior approval from the

switch manufacturer's Application Engineering Department.

SYM

T7ci

INCHES

MILLIMETERS

MIN.

MAX.

137

153

W/

Pounds

A total solids content of not more than 250 ppm.

A total hardness, as calcium carbonate, of not more than

OUTLINE DRAWING

75 psig
.75C

.300

.395

MIN.
3.479

SVM

MAX.

4.58

7.62

1.160

1.600

29.47

40.63

7.950

8.050

201.94

204.46

2.50

REF.

63.5

4.000

.550

.670

13.98

17.01

u
V

1.600

35.57

40.63

.740

.760

18.80

19.29

6.460

6.540

164 09

166.11

X
Y

.720

.780

18.29

19 80

5.500

5.75Q

10.02

13971

146 04

.312

.562

7.93

14.26

.115

.135

2 93

3.42

1.047

1.177

26.60

29.69

1186

MAX.

.215

1.400

MIN.

.180

9.78

MILLIMETERS

MAX.

.385

INCHES
MIN.

3.886

545

REF.
101.59

.660

790

1677

250

1.410

31.76

35.80

1.240

1.260

31.50

31.99

800

1.000

20.33

25.39

AA
AB

3.485

2 580

63.12

4 180

20.06

65.52
106.16

G11 SERIES

.10

.08

u 06

2?
.a

.03

NOTES:

<<
te

6PM 3.8 LITERS/ MINUTE

CASE TO EXCHANGER
ONE CELL, TWO POSTS
1

.02

FOR WATER AS COOLING FLUID

DATA FOR DEPOSIT- FREE WATER PASSAGEWAY

.4

.6

.8

.01

.2

1.0

10

FLOW RATE - GALLONS / MINUTE

FIGURE

1:

THERMAL RESISTANCE VS FLOW RATE

(ONE CELL, TWO POSTS)

s<
CO

'

tt.CE

o<
ooin

*^

u
etc
3 HI
(On.

-_i

.2

FLOW RATE - GALLONS PER MINUTE

2: PRESSURE DROP PER G11 ASSEMBLY
(FOUR COOLING POSTS IN SERIES EXCLUDING
PRESSURE DROPS OF CONNECTING HOSING)

FIGURE

I
1187

G11 SERIES

900

800

"

2 700
;

<

6
8

10

600 _ 20
3
o
40
IaJ

co

60
X
80
1 500 - 100
X
<
2

400 -

300
8

20

10

DUTY CYCLE

FIGURE

3:

IN

80

100

PER CENT

WELDING RATINGS SCR TYPE C350 (TWO CELLS)

-

1600

10

DUTY CYCLE

FIGURE

4:

IN

20
PER CENT

WELDING RATINGS- SCR TYPE C380 (TWO CELLS)

I
1188

80

100

G11 SERIES

90

V
I

4
a.
a.

z
80

<
ISO

WATER COOLED
50

6PM
-400Hz

Tj

I.O

240

CONDUCTION

ANGLE^GO

I25*C

70

CONDUCTION

ANGLE
60

ZOO
ISO
RMS CURRENT - AMPERES

100

FIGURE

5:

250

PHASE CONTROL CHARACTERISTICS

TWO C350 SCR'S

90

80

2?
uj

'

iSS 70

o t
<

WATER COOLED
1.0 GPM
50 - 400 Hi

UJ
a.

60

I'j

I25*C

V
V^^

CONDUCTION
ANGLE:

S^^60
50

O^V

\ 360

40

300

200

FIGURE

6:

180

N^V240

conduction ANGLE

400
RMS CURRENT- AMPERS

500

600

PHASE CONTROL CHARACTERISTICS

TWO C380 SCR'S

I
1189

Passivated

GER SERIES

Rectifier

GER4001

GER4002
GER4003

REPLACEMENT FOR 1N4001-4007

THE GENERAL ELECTRIC GER SERIES IS A 2 AMPERE RATED, AXIAL

LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PROVIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND
EXCELLENT THERMAL CHARACTERISTICS. PASSIVATION AND PROTECTION OF THE SILICON PELLETS PN JUNCTION ARE PROVIDED BY SOLID
GLASS; NO ORGANIC MATERIALS ARE PRESENT WITHIN THE HERMETICALLY SEALED PACKAGE.

maximum

absolute
Ratings

Symbol

Reverse Volt

V BM( wk B

ratings:

GER4007

(25c unless otherwise specified)

GER

GER

GER

GER

GER

GER

GER

4001

4002

4003

4004

4005

4006

4007

50

100

200

400

600

800

1000

1000

1000

1000

1000

1000

>

GER4004
GER4005
GER4006

Working Peak,

DC,V R
Ave Half

Wave

mA

1000

1000

75 C
.150

Rectified

Forward

Current

25 C

mA

2000

2000

2000

2000

2000

2000

2000

Peak Forward
Current 25 C

MAX.

(3.8IOMm.)

.180

MAX.

(4.572 Mm.)

I FM

surge A) 30

V2 Cycle Surge I PM (Rep)

60 Hz
Max. Junction
Temperature T

30

30

30

30

30

30

10

10

10

10

10

10

050

10

(l.27<

1.0 MIN.

(25.4O0Mm.)

175C

175C

175C

175C

175C

175C

.033 MA
(.889 M
DIA. AF1
TINNINI

175C

ALL 0IMENTIONS ARE IN

AND (METRIC)
*WELD AND SOLDER FLASH

electrical characteristics:
Max. Forward Volt Drop
1

Amp Continuous DC 25 C

Max. Full Cycle Average

Forward Voltage Drop
(Rated Current @ 25C)

Maximum

Reverse Current
(25C)

@ Rated V R

(100C)

Maximum Full Cycle Average

Reverse Current

CONTROLLED

VF

1.1 Volts

V F( av)-*

.8

Ir

.01

Ik

.05

mA
mA

.03

mA

-65 to +175

IK

(av)

Volts

Operating & Storage Temperature

Range

Tj,

Tstg

1190

IN

THIS Af

Silicon

Transistors
GES929.30

replacements for 2N929 and 2N930

Electrical

The General Electric GES929 and GES930 are NPN, silicon, planar, epitaxial, passivated transistors. These devices feature very high gain at extremely low collector currents, low leakage currents and inherent low noise characteristics. These transistors
are ideally suited for low level amplifier applications and, with leads in a TO-92 pin
configuration, are epoxy replacements for the 2N929 and 2N930 type devices.

-Q-

absolute

maximum

SEATING PLANE

ratings: (25C)(u nless otherwise specified)

Voltages
SYMBOL

Collector to Emitter

50

VcEO
Vebo
VcBO

Emitter to Base
Collector to Base

Volts
Volts
Volts

70

*b

Current
Collector (Steady State)

mA

100

Io

Dissipation

@ 25C)t
@ 55C)f

Pt
Pt

Temperature
Storage
Operating

250

-65 to +150C
+125C

TsTQ
T,

Lead Soldering, 1/16" 1/32" from

case for 10 sec. max.
f Derate 3.6

mW/'C

4>D

1.

E
e
e1

2.41

(25^)

= 5V)

(Vcb
(Vce

Collector Emitter

Breakdown Voltage

(Ic

= 5V, Ic =

10 mA)

- 5V, Ic = 0.5 mA)

= 5V, Ic =

10

mA)

= 10 mA)|

= 10 /xA)
Emitter Base Breakdown Voltage (I E = 10 //.A)
Collector Saturation Voltage (Ic = 10 mA, I B = 1 mA) %
Base Saturation Voltage (Ic = 10 mA, I B = 1 mA) J
Base Emitter Voltage (Vce = 10V, I c = 2 mA)

Collector Base

Breakdown Voltage

JPulse conditions 300 ^sec.

.1

.1

2%

6
6

NOTES

2 2

.0

.0

1.3

75 .205

2 51 .16 5
2.67
5
.09 5
1.39 5 .045 .0 5 5
4. 32
.13 5 .170
1

3.4 3

.5

1.270

6.3 5

2.920

2.0 3

2.670

.2
.1

.0

00
-

.0

50
1

80

D",3
3
3
2

.10 5

THREE LEADS

3.

(THREE LEADS) <b2 APPLI ES BETWEEN L) AND L2

^b APPLIES BETWEEN L2 AND 12 .70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 1.500")
FROM SEATING PLANE.
.

(unless otherwise specified)

= 50V)

(Vce

5 Oj .0
8 2 r
9

4.

Min.

Forward Current Transfer Ratio

MAX.
.2

THIS SIDE.

100C)

Emitter Cutoff Current (Veb

MIN.
.17

5.20

12.700

LZ

Static Characteristics
Collector Cutoff Current (Vcb

INCHES

.1

50

I.I

.4

COLLECTOR

!.

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

increase in ambient temperature above 25C.

= 50V, TA =
= 50V)

80

3.1

.5

EMITTER
BASE

3.

NOTES:

+260C

electrical characteristics:

(Vcb
(Vcb

7
7

.4

Ll

5.3 3

.4

4.4 5

mW
mW

360

4.3 2

*b2

Total Power (Free Air

Total Power (Free Air

MILLIMETERS
MIN.
MAX.

2.

(Ic

10

IcBO
Ices*

10
10

Iebo

50

GES929
GES930

IIfe

60

UFE

100

120
300

GES929
GES930

iIfe

90
150

GES929
GES930

iIfe

350
600

IIfe

IIfe

1191

nA
mA
nA
nA

V(BR) CEO

50

Volts

V (BR) CBO

70

Volts

V(BR> EBO

Volts

Vce

(sat)

V BE

(sat)

Vbe

duty cycle.

Max.

lCBO

.5

.125

Volts

.78

Volts

.9

Volts

GES929, 30

Dynamic

Characteristics

Gain Bandwidth Product

Noise Figure

(V CK

(Vce

5V,

Ic

= 10V, I =
=

10 ^A, R

10

mA,

10 mHz)

BW =

k,

15.7

fT

Output Capacitance, Common Base

(Vcb = 10V, Ie = 0, f = 1 MHz)

90

350

mS

dB
dB

Co

Normalized h FE vs.

Max.

NF
NF

GES929
GES930

kHz)

Min.

pF

4.0

1.0

2.5-

GES929
GES930

1.5-

1.0-

0.5'

0.001

0.01

0.1

1.0

I c -C0LLECT0R CURRENT-mA

Small Signal Current Gain vs. Collector Current

IK

pi
1

vC e

5v
TA +25

VCE = 5V
TA =+25"C

GES929

+ I25C

".*

FE VS VCE

f-lkHz

^^ ^

*=*'

- -55c

.75M

f=l
"fe vs VCE

\r

~~iov

kH7

;._

" + 23C

"

""

>

"" hFE DC

2V, IV

100

+ I25C

GES930

+ 25C

10^

*"

-55C

100

.75MHz/'

1-

2.5

UJ

MHz,
5MM.

|i

(,

IOV

5UH, h VS V CE

I0V^

VS V

^^CE

u
li_

5MHz
tr

in

'0

5MHz/

^/lOMHz,

y/zOHMz,

IOMHz v

OMt \*^*
1

50*H

20Mhz//^

oo^rfHj^-

O.OI

0.1

I c -COLLECTOR

1.0

10

01

CURRENT-mA

Ic-

1192

"HOOMHz^

01

z^^^

)S
l.<

->

COLLECTOR CURRENT-mA

10

GES929, 30

Typical Collector Characteristics

GES929

20

2.0

.12

TA*+25"C

TA -55'C

Jl
1.8

.10

.012,

.on.

<
E
.010^.

7t

.009^

77

.008

.09
.08

<

E
.07

.06

.05

VI

.007
-j

0.8

o
o
o

0.6

.04

06_
.005^

.03

\s 71

004

^n
y

.003
.002

0.2

IB
1

10

.001

T B = .0lm A

|IB 0mA
=

60
70
80
20
30
40
V CE - COLLECTOR-EMITTER VOLTAGE- VOLTS
50

90

0.5

100
VCE

COLLECTOR-EMITTER VOLTAGE-VOLTS

I
10

70
80
30
40
50
60
20
VCE -C0LLECT0R-EMITTER VOLTAGE- VOLTS

90

10

100

1193

70
80
50
60
40
20
30
VCE -COLLECTOR-EMITTER VOLTAGE-VOLTS

90

100

GES929.30

Typical Collector Characteristics

GES930

20

.12

.10

.11

.09

TA"+25"C
.08
.07

.06

.05
GC

12

.04

03_

.02

IB

10

20
30
40
50
60
70
80
VCE -COLLECTOR-EMITTER VOLTAGE-VOLTS

90

100

0.3

0.2

0.1

V CE

0.4

0.5

.OImA

0.6

0.8

0.7

0.9

1.0

-COLLECTOR-EMITTER VOLTAGE- VOLTS

5.0

.Oil,

TA =+IOOC

.010,*

4.5

.009

^S

^.ooe^X'
3.5

.007^^
o:

3.0

.006^H
2.5

.005^^
2.0

//

1.5

.003

.002

1.0

0.5

10

20
30
40
50
60
70
80
VCE - COLLECTOR-EMITTER VOLTAGE-VOLTS

90

iB'OOImA

10

100

20
VCE -

1194

'

iB-OmA

30
40
50
60
70
80
90
COLLECTOR-EMITTER VOLTAGE-VOLTS

100

Silicon

Transistors
GES2221.2

Features: Performance comparable to

hermetic units

High Gain

Medium Voltage

LOWVcB(SAT)
High Frequency

The General Electric GES2221 and GES2222 units are silicon, NPN, planar passivated, epitaxial devices specifically developed for high speed switching, amplifier and
core driver applications.

absolute

maximum

rati ngs:(T A =25c,uniess otherwise

GES2222

GES2221

Voltages

specified)

Collector to Emitter

VCEO

30

30

Volts

Collector to Emitter

V CES
V EBO

40

40

Volts

Volts

VcBO

60

60

Volts

Emitter to Base
Collector to Base

I.

TO- 92

SYMBOL

Current

Collector
Collector

<2%

mA

400

400

Ic

#b

W
+0

peak, pulsed 10 usee,

duty cycle)

mA

800

800

Ic

Dissipation

Power (TcS25C)
Total Power (T A g25C)
Derate Factor (T C S25C)
Derate Factor (T A g25C)
Total

Pt
Pt

1.0

0.360

0.360

Watts
Watts

mW/C
mW/C

10.0

10.0

3.6

3.6

5.3 3

7
7

.4
.4

4.4 5
2.41
I.I

48

Tatg

Operating

T,

case for 10 sec.)

Tl

electrical Characteristics:
STATIC CHARACTERISTICS
Collector-Emitter

(I B

=
=
=

10

.0

2 2

.01

1.3

.1

50, 1.395 .045

3.4 3
112.700

4.32

55
.13 5 .170

.5

1.270

6.350
2.920

2.0 3

2.670

2
.1

.0

.0

00
- .050

501
1

80

1,3

3
3
2

.10 5

C
C

THREE LEADS

THIS SIDE.
3.(THREE LEADS) <b2 APPLIES BETWEEN L| AND L2
4>b APPLIES BETWEEN L2 AND 12.70 MM (.500')

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED INL, AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.

+260

<

(T A

>

= 25C,unless otherwise specified)

Symbol

Min.

GES2222

V<:

30

Max.

Min.

Max.

IB

0)

Volts

30

Breakdown Voltage
lOyuA, Io

= 0)

Volts

Breakdown Voltage

10/kA, Ie

Collector-Emitter

(Ic

.2

Breakdown Voltage

10mA,

Collector-Base

(Io

.0

6
6

5.20
7 5H 20 5
4 190 .12 5 .16 5
2.67
.09 5
5

GES2221

Emitter-Base

NOTES:

Lead (Me"^2" from

.0

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

Storage

(Ic

.17

.5 5

.1

80

L2

1.

Temperature

4.3 2

<M

COLLECTOR

3.1

BASE

3.

MILLIMETERS
INCHES
NOTES
MIN.
MAX. IMIN. MAX.

1.0

EMITTER

2.

= 0)

60

60

Volts

40

40

Volts

Breakdown Voltage

16>A, Vbe

= 0)

Collector-Emitter Saturation Voltage

(Ic
(Ic

= 150mA, I B =
= 500mA, I B =

15mA)
50mA)

VCE(SAT)

.3

.3

VcE(SAT)

1.2

1.2

Volts
Volts

Base-Emitter Saturation Voltage

(Ic
(Ic

= 150mA, I B =
= 500mA, Ib =

15mA)
50mA)

VBE(SAT)

1.1

1.1

VbE(SAT)*

2.4

2.4

1195

Volts
Volts

GES2221, 2

GES2222

GES2221

STATIC CHARACTERISTICS (Continued)

Symbol

Min.

Max.

Min.

Max.

Forward Current Transfer Ratio

(Vce
(Vce
(Vce
(Vce
(Vce
(Vce

=
=

1.0V, Ic

10V, Ic
10V, Ic
10V, Ic
10V, Ic
10V, Ic

=
=
=
=

= 150mA)
= 0.1mA)
= 1.0mA)
= 10mA)
= 150mA)
= 500mA)

h F E*
hpE
IIfe

hra*
Hfb *

20
20
25
35
40
20

50

120

35
50
75
100

300

30

Collector Cutoff Current

(Vcb
(Vcb

= 50V, Ie = 0)
= 50V, Ie = 0, Ta =

100C)

IcBO

10

10

nA

IcBO

10

10

fiA

50

50

nA

Emitter-Base Reverse Current

(V EB

3.0V, Ic

0)

DYNAMIC CHARACTERISTICS
Gain Bandwidth Product

(Vce

= 20V, Ic =

20mA,

100MHz)

f.

250

MHz

250

Collector-Base Capacitance

(Vcb

10V,

Ie

= 0, f = 1 MHz)

Ccl

8.0

8.0

pF

Emitter-Base Capacitance

(Veb

= 0.5V, Io =

*Pulse width

<

0, f

= IMHz)

300/Usec, Duty Cycle

Cel

< 2%

1196

25

25

pF

"

Silicon

Transistors

The General Electric GES2221A and GES2222A units are silicon, NPN, planar passivated, epitaxial devices specifically developed for high speed switching, amplifier and
core driver applications.
FEATURES:

Performance comparable
High gain

Medium

Excellent switching speeds

to hermetic units

voltage

Low

High frequency

saturation voltages
i

absolute

maximum

ratings:

(t*

25c, unless otherwise specified)

-Q

GES2221A
GES2222A
Collector to Emitter

VceO

40

Collector to Emitter

VCES

40

Vebo
VcBO

Emitter to Base
Collector to Base

75

SEATING PLANE

SYMBOL

.4

g 2%

400

Ic
/isec,

duty cycle)

800

Ic

mA

.4

mA

3.1

2.41

12.700

g 25C)
g 25C)
(T c S 25C)
(T A g 25C)

Total Power (T c
Total Power (T A

Derate Factor
Derate Factor

Pf
Pt

1.0

0.360
10.0
3.6

L2

Watts
Watts

50

3.4 3

6.3 5

2.920
2.0 3

mW/C
mW/C

.0

48 2
20
80 4.1 90

I.I

.55

.0

5.

.1

.0

.01

75

.12 5

2.67
.09 5
1.39 5 .0 4 5
^4.3 2 0]

_j

2.670

5_l

22

.1

.1

1.3

65
5

.1

.0

55

.170

- ^050

.2 50
.0

NOTES

.20 5]

^00'

1.270

.1

MAX.
U2I

.17

Li

Dissipation

0?

4.4 5

el

MIN.

5.3 3

1.3 2

*t>2

Collector (peak, pulsed 10

BASE

3.

MAX.

MIN.

A
*b

$D

EMITTER

COLLECTOR
^millimeters 1 INCHES_J

TO-92

Current

Collector

I.

2.

Volts
Volts
Volts
Volts

1,3

3
3
2

80 .105

NOTES:
1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3.

Temperature

Storage
Operating

TsTG

65 to

T,

65 to

Lead (M 6 "% 2 "from

TL

case for 10 sec.)

electrical characteristics:

+150
+125

+260
<t a

C
C

(THREE LEADS) <#>t>2 APPLIES BETWEEN L ANDL 2

$b APPLIES BETWEEN L2 AND 12.70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L, AND BEYOND 12. 70 MM i.500")
FROM SEATING PLANE.
(

25c, unless otherwise specified)

GES2222A
GES2227A
STATIC CHARACTERISTICS
Collector-Emitter

(Ic

= 10mA,

Emitter-Base

Collector-Base

Min.

Max.

IB

= 0)

V <BH)CEO

40

Volts

V (BR)KBO

Volts

V(BR)CBO

75

Volts

V <BR)CBS

40

Volts

Breakdown Voltage

(I=10,uA.

(Ic

Symbol

Breakdown Voltage

Ic

= 0)

Breakdown Voltage

10 M A,

Collector-Emitter

IE

= 0)

Breakdown Voltage

(Ic=10 m A,Vbe

= 0)

Collector-Emitter Saturation

Votage

= 150mA, I B = 15mA)
(Ic = 500mA, I B 50mA)

(Ic

VcE(SAT)*

VcE(SAT)*

Vbe<sat)*

0.6

0.3

Volts

1.0

Volts

Base-Emitter Saturation Voltage

(Ic
(Ic

= 150mA, I B = 15mA)
= 500mA, I B = 50mA)

Vee(sat>*

1197

1.1

Volts

2.0

Volts

GES2221A, 2A
GES2221A
STATIC CHARACTERISTICS (Continued)

Symbol

GES2222A

Min.

Max.

20
20
25
35
40
20

120

35
50
75
100
30

300

10
10

10
10

fiA

50

nA

MHz

Min.

Max.

Forward Current Transfer Ratio

= 1.0V, Ic = 150mA)
= 10V, Ic = 0.1mA)
(Vce = 10V, Ic = 1.0mA)
(Vce = 10V, Ic = 10mA)
(Vce = 10 V, Ic = 150mA)
(Vce = 10V, Ic = 500mA)
(Vce

h F B*

(Vcis

hpE
Hfe

hrE*

h F E*

h F E*

Collector Cutoff Current

(Vcb
(

Vcb

= 60V, I E = 0)
= 60V, I E = 0, T A =

Icbo

100C)

IcBO

50

nA

Emitter-Base Reverse Current

(V EB

= 3.0V,

*Pulsed, 300

= 0)
usee, 2%

50

Ic

duty cycle

DYNAMIC CHARACTERISTICS
Gain Bandwidth Product

(Vce

= 20V, Ic = 20mA, f =

100

MHz)

300

Ccb

8.0

8.0

pF

Ceb

25

25

pF

150

150

250

f,

Collector-Base Capacitance

(Vcb

= 10V, Ie = 0, f = 1 MHz)

Emitter-Base Capacitance

(Veb

= 0.5V, Ic = 0, f = 1 MHz)

Collector-Base Time Constant

(Vce

= 20V, Ic = 20mA, f = 31.9 MHz)

Tb'Cc

psec

Input Admittance

(Ic

= 20mA, Vce = 20V, f = 300 MHz)

60

60

SWITCHING CHARACTERISTICS
Turn-On Time
(Ic

= 150mA, Vce = 30V, Ibi = 15mA, Figure 1)

lion

35

35

285

285

Turn-Off Time

(Ic

150mA, Vce

Pulse width

= 30V, Ibi = - I B2 = 15mA,

Figure 2)

toff

g 300/1 sec, duty cycle S 2%

+ I6V
t

r <

"

TO

OSCILLOSCOPE

k&)

Z IN MOOkil

2 /A SEC

C, N <l.4pF

PW<200/lSEC

50X1

DUTY CYCLE <2%

200.Q

RISE TIME <5nS

1'

+ 30V

FIGURE

1.

TEST CIRCUIT

FOR DETERMINING TURN-ON TIME

TO

IN

OSCILLOSCOPE

-30 V
PWOI/tSEC
t r at i7/iSEC
f

Z,

RISE TIME <5nS

I
FIGURE

N <IOOk&
12 pF

C rN <

2.

TEST CIRCUIT

FOR DETERMINING TURN-OFF TIME

1198

ohms

Silicon

Signal Transistor

GES2483

replacement for 2N2483

Electrical

Electric GES2483 is a silicon, NPN, planar, epitaxial, passivated transistor.

This transistor is ideally suited for low-level amplifier applications. This device is an
epoxy replacement for the 2N2483.

The General

FEATURES:
Very high gain

at

extremely low

Epoxy encapsulation with proved

collector currents

liability

Low leakage currents

Inherent low noise characteristics

bility

re-

excellent characteristic sta-

environmental

under

maximum

-o-

L2

-A

v.

60

Volts

Volts

60

Volts

Collector to Base

CEO
EBO
CBO

Current

Collector (continuous)

100

mA

>

PT

360
250

Pr

Storage

^STG
T,
T,

+ 260

soldering, 1/16"
1

sees.

1/32"

to
to

+150
+125

C
C
C

max.

mW/C increase

in

STATIC CHARACTERISTICS

Symbol

Min.

= 10mA, I B = 0)

(BR)CEO'

60

Emitter-Base Breakdown Voltage

E

= 10M A, I c = 0)

Breakdown Voltage
=
10a<A,Ie=0)
c

(BR)EBO

Collector-Base
(I

241
3.4 3

12.700

6.3 5

MAX.
.2

.0

.0

5.2

.1

.0

6j

.0

75

2 2

9
.20 5
1

1.3

4 190 .12 5
65
2.67
.09 5
5
1.39 5 .04 5, .0 5 5
1
3 5 .170
4.3 2
.1

.1

1.270

.5
1

00

.2 50

5
2.920
2.030 2.670 .080
.1

NOTES

.1

50

I.I

MIN.
.17

.0

1,3

3
3
2

.10 5

THREE LEADS
CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

2.

THIS SIDE.
3.

(THREE LEADS) <!>b2 APPLIES BETWEEN L ANDL2.

^b APPLIES BETWEEN L2 AND 12.70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L, AND BEYOND 12. 70 MM 1.500")
FROM SEATING PLANE.
f

(unless otherwise specified)

Col lector- Emitter Breakdown Voltage

(I

48

COLLECTOR

ambient temperature above 25C.

electrical characteristics: (25C)

(I c

3.1

.5

80

E
c
1

L2

1.

Operating

'Derate 3.60

4.4 5

.4

BASE

3.

INCHES

5.3 3

7
7

.4

EMITTER

2.

NOTES:

-65
-65

from case for

(1

mW
mW

Temperature

Lead

4.3 2

Li

@ 25C)
Total Power (Free Air @ 55C)

MILLIMETERS
MIN.
MAX.

A
fb
*b2

Dissipation

Total Power (Free Air

I.

TO-92
SYMBOL

Emitter to Base

-I

(unless otherwise specified)

Voltages
Collector to Emitter

4,0

stresses,

85C-85% RH

ratings: (25C)

SEATING PLANE

absolute

-03

V (BR)CBO

60

Max.

Units

Volts

Volts

Volts

Collector-Base Cutoff Current

(V CB =45V,I E = 0)
(V CB =45V,I E = 0,T A =100C)

'CBO
'CBO

50

nA

10

/xA

'EBO

50

nA

Emitter-Base Cutoff Current

(V EB = 5.0V,I C =

0)

Base-Emitter Voltage
(I

100M, V CE = 5V)

0.50

BE(ON)

1199

0.70

Volts

GES2483
STATIC CHARACTERISTICS

(Continued)

Symbol

Min.

V CE(SAT)

Collector-Emitter Saturation Voltage

(I

c = 1mA,

B =

0.1mA)

Max.

Units

0.350

Volts

Forward Current Transfer Ratio

(V CE
(V CE
(V CE
(V CE
(V CE

=5V,I c = lQuA)
= 5V, I = lOQfiA)
c
= 5V,I C = 500M)
=5V,I = lmA)
c

= 5V, I c = 10mA)

h FE

40

h FE
h FE
h FE
h FE

75

100
175

500

h fe

80

450

NF

dB

dB

dB

15

dB

DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
(I
c = 1mA, V CE = 5V, f=lKHz)

Wide Band Noise Figure

(I
c = ltytA, V CE = 5V, R g =10Kfi,
f= lOHzto lOKHz, B.W =15.7 KHz)
Spot Noise Figure
(I

c =

10mA,V ce =5V, R g = 10Kn,

NF

f= lKHz)
(I

c = lO/M,

V CE

Rg

= 10KSI,

NF

V CE =5V, R g

= lOKfi,

NF

= 5V,

f= lOKHz)
(I

c = 10/iA,

f= 100 Hz)
Forward Current Transfer Ratio
(I
c = 50/iA, V CE =5V, f=5MHz)
(I

c =

|h fe

500M, V CE =5V,f=30MHz)

Output Capacitance
(VCB = 10V,f=lMHz,Emitter

2.0

|h fe

C cb

2.0

1.0

4.0

pF

12

pF

connected to Guard Terminal

on 3-Terminal Bridge)
Input Capacitance

(V EB = 0.5V, f= 1MHz, Collector

connected to Guard Terminal on

C eb

3-Terminal Bridge)
*Pulsed Test - Pulse width

< 300 jUsec,

duty cycle

S 2%.

1200

Silicon

Transistor

The GES2906 is a planar, epitaxial, passivated, PNP, silicon transistor intended for
general purpose, amplifier, saturated switching, and core driver applications.
Features:

Low leakage currents

Low

collector saturation voltages

High

-I

speed switching

Epoxy encapsulation with proved

environmental stresses, 85C

excellent

reliability

SEATING PLANE

characteristic stability under

2.

T0-92

85% RH
SYMBOL
A

absolute

maximum

ratings:

(Ta

25c, unless otherwise specified)

Voltages
Collector to Emitter

V CEO

40

Emitter to Base
Collector to Base

Vebo
VcBO

-5

Volts
Volts
Volts

60

5,3 3

fb

.4

.4

4-D

4.4 5

80

3.1

2.41

*1

I.I

L
L|

Collector (peak, pulsed 10

g 2%

Ic

-350

mA

Ic

-700

mA

.5

48

3.4 3

12.700

2.67

6.3 5

2.0 3

4.32

INCHES
MIN.

MAX

.17

.2

.0

2 2

.01 91

.0

[5200
4.1

EMITTER
BASE
COLLECTOR

50 1.395

2.920

Current

3.

MILLIMETERS
MAX.

MIN.
1.3 2

*t>2

L2

Collector

I.

.1

.09 5

.0
.1

.1

.1

00

2.670 .080

6 0j
5

'.04 5
3 5

1.270

.2 50

1.3

75 .205

.12 5

.5

NOTES

.0

55

70

1,3

3
2

.10 5

/isec,

duty cycle)

NOTES:
1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

Dissipation

THIS SIDE.
3 (THREE LEADS) <b2 APPLIES BETWEEN L| AND L 2
$b APPLIES BETWEEN L2 AND 12.70 MM (.500')
.

g
S

25C)
Total Power (T c
Total Power (T*
25C)
25C)
Derate Factor (Tc

Derate Factor

Pt
Pt

Watts
Watts

0.700

0.360

(T A S 25C)

mW/C
mW/C

7.0
3.6

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 1.500")
FROM SEATING PLANE.

Temperature
TsTG
T,

Storage
Operating

Lead

CYia"

Tl

electrical Characteristics:
STATIC CHARACTERISTICS
Collector-Emitter

+150
+125

(Ti

s V mbo1

+260

= 25C, unless otherwise specified)

Min.

Max.

Breakdown Voltage

-10MA,

Emitter-Base

to
to

%2" from

case for 10 sec.)

(Ic

-65
-65

Ib

= 0)

BK)CEO*

-40

Volts

-5

Volts

Breakdown Voltage

(I K = 10|UA, I c = 0)

V(BH)EBO

1201

GES2906
electrical characteristics: (cont.)
Collector-Base

Symbol

Min.

-60

Max.

Breakdown Voltage

(Ic= -10/xA,

IE

0)

Volts

Collector-Base Cutoff Current

=
=

(Vcb
(Vcb

-50V,
-50V,

IE
IK

= 0)
= 0, T A =

+100C)

IcBO

-20

nA

IcBO

-20

,uA

-50

nA

-0.4
1.6

Volts
Volts

-1.3
-2.6

Volts
Volts

Collector-Emitter Cutoff Current

(Voe

-30V,

IB

0)

Collector-Emitter Saturation Voltage

(Ic
(Io

-150mA,
500mA,

= -15mA)
= 50mA)

IB
IB

Vce(SAT)*
Vce<SAT)*

Base-Emitter Saturation Voltage

=
=

(Ic
(Ic

-150mA,
-500mA,

= -15mA)
= -50mA)

IB

IB

Vbe<sat>*
Vbe(sat>

Forward Current Transfer Ratio

(Vce
(Vcb
(Vce
(Vce
(Vce

= -10V, I c = -0.1mA)
= -10V, I c = -1.0mA)
= -10V, Ic = -10mA)
= -10V, Ic = -150mA)
= -10V, Ic = -500mA)

iIfe

20

IlpE

25
35

Iife

h F E*

40
20

h F E*

120

DYNAMIC CHARACTERISTICS
Output Capacitance, common base
(Vcb = -10V, f = 1 MHz, Emitter
connected to Guard Terminal on
3-Terminal Bridge)

PF

common base
-0.5V, f = 1MHz, Collector

Input Capacitance,

(Veb =
connected to Guard Terminal on
3-Terminal Bridge)

pF

30

High Frequency Current Cain

= -50mA, Vce =

(Ic

-20V,

100MHz)

|h,.|

2.0

Delay Time

(Ics

150mA,

Ibi

= 15mA, see Pig. 1)

10

Rise Time
(I cs

= 150mA, I B = 15mA, see Fig. 1)

i

t,

40

t.

80

Storage Time
(Ics
Fall

150mA,

Ibi

I B2

= 15mA, see Fig. 2)

150mA,

Ibi

Ibs

= 15mA, see Fig. 2)

Time
(Ics

INPUT
Z " 50 il
PRF=I50PPS
RISE

-1NTUT

TO OSCILLOSCOPE
S
5 " SEC

TIME<2nSEC
1

t,

O-

!,T,'^n-

2 = 50n
PRF = I50PPS
RlSETIMES2nSEC

TO OSCILLOSCOPE
RISE

TIMEi5nSEC

2| N =

IOMil

200n SEC

Figure

Test Circuit For Determining

and Rise Time

*Pulse conditions of 300

/tsec

duration,

2%

Delay Time

Figure 2 Test Circuit For Determining Storage Time

and Fa || Time
duty cycle.

1202

Silicon

Transistor

The GES2907 is a planar, epitaxial, passivated, PNP, silicon, transistors intended for
general purpose, amplifiers, saturated switching, and core driver applications.

Features:

Z
Low leakage currents

Low

J__

collector saturation voltages

Z3L

1
H
_J>D

A-

High speed switching

(EMITTER

SEATING PLANE

Epoxy encapsulation with proved

reliability

excellent characteristic

TO-92
stability

85% RH
A

ratings:

(t a

fb

.4
.4

= 25c, unless otherwise specified)

2.41

Emitter to Base
Collector to Base

-40

-5

V EBO

-60

VcBO

Ll

Volts
Volts
Volts

Current

80

.5
.4

4.1

INCHES
MIN.
.17

5
J>
8 2 .0

5.2

4.4 5
3.1

Voltages

VcEO

COLLECTOR

5.3 3

7
7

E
1

Collector to Emitter

BASE

3.

MILLIMETERS
MAX.

MIN.
4.3 2

*b2

*D

maximum

2.

under
SYMBOL

absolute

-02-

-4

-Q-

environmental stresses, 85C

-03

.1

90

O 2.67

6
6

1.270

2.920

2.0 3

1.3

.1

.1

22
9

.01

.12 5 .16 5
.09 5
5

50 1.395 .045
3 5
3.430 4 32

.500
12.700
6.3 5

.0

NOTES

75 .205

I.I

L2
Q

MAX.
.210

.2
.1

.0

55

.170

- .05

50
1

2.670 .080

1,3

3
3
2

.10 5

NOTES:

Collector

-350

Io

mA

1.

mA

THIS SIDE.
3 (THREE LEADS) <b2 APPLIES BETWEEN L| AND L2.
^b APPLIES BETWEEN L2 AND 12.70 MM (.500')

Collector (peak, pulsed 10 Msec,

g 2%

duty cycle)

-700

Ic

THREE LEADS
CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 1.500")
FROM SEATING PLANE.

Dissipation

g
^

Total Power (Tc

25C)
Total Power (T A
25C)
Derate Factor (Tc
25 C)

Derate Factor (T A

Pt
Pt

Watts
Watts

0.700
0.360

^
g 25C)

mW/C
mW/C

7.0
3.6

Temperature
Storage
Operating

Lead

TsTG

T,

to

+150
+125

C
C

STATIC CHARACTERISTICS
Collector-Emitter

(T A

Symbol

Min.

Max.

V<bb>ceo*

-40

Volts

V(BH)EBO

Volts

Breakdown Voltage

= lOjIiA, Ic = 0)

= 25C, unless otherwise specified)

Breakdown Voltage

= -10mA, I B = 0)

Emitter-Base

+260

Tl

electrical Characteristics:

(Ib

to

(W M2" from

case for 10 sec.)

(Ic

-65
-65

1203

GES2907
electrical characteristics: (cont)
Symbol
Collector-Base

= 1(VA,

(Ic

Min.

Max.

-60

Vo

-50
-20

nA

-50

nA

Breakdown Voltage

= 0)

IE

V(BR)C

Collector-Base Cutoff Current

= -50V, I B = 0)
= -50V, I K = 0, T A =

(Vcb
(Vcb

IcBO

+100C)

IcBO

mA

Collector-Emitter Cutoff Current

(Vce

-30V,

= 0)

IB

Collector-Emitter Saturation Voltage

= -150mA, I B = -15mA)
= -500mA, I B = -50mA)

(Ic
(Ic

VcE(SAT)*

Vce (sat)*

-0.4
-1.6

Volts
Volts

-1.3
-2.6

Volts
Volts

Base-Emitter Saturation Voltage

=
=

(Ic
(Ic

-150mA,
-500mA,

IB
IB

= -15mA)
= -50mA)

Vbe(SAT)*
Vbe(sat)*

Forward Current Transfer Ratio

(Vce
(Vce
(Vce
(Vce
(Vce

= -10V, Ic = -0.1mA)
= -10V, Ic = -1.0mA)
= -10V, Ic = -10mA)
= -10V, Ic = -150mA)
= -10V, Ic = -500mA)

IIfe
IIpe
IlFE

hfB*

h F E*

35
50
75
100
30

300

DYNAMIC CHARACTERISTICS
Output Capacitance, common base
(Vcb = -10V, f = 1MHz, Emitter
connected to Guard Terminal on

S-Terminal Bridge)

Co

pF

common base
-0.5V, f = 1MHz, Collector

Input Capacitance,

(Veb =
connected to Guard Terminal on
3-Terminal Bridge)

Ceb

pF

30

High Frequency Current Gain

(Ic

= -50mA, Vce =

-20V,

100

MHz)

h,.

2.0

Delay Time

= 150mA, Ibi = 15mA, see

Fig. 1)

10

Fig. 1)

40

(Ics

Time

Rise

(Ics

150mA,

Ibi

= 15mA, see

nsec

Storage Time
(Ics

Fall

150mA,

I Bi

Ib2

= 15mA, see

Fig. 2)

80

150mA,

Ibi

Ib2

= 15mA, see Fig. 2)

30

Time
(Ics

30
Q
INPUT
Z

1NTUT

50.fi

- TO OSCILLOSCOPE

PRF=I50PPS
RISE TIME <2nSEC
1

O-

Th

RISE TIME<5nSEC
Z -IOMil

IK

vw-

PRFM50PPS
BISE

TO OSCILLOSCOPE
RISE

TIME<2nSEC

Z|

|N

TIMES5nSEC

N = IOMfl

50

200nSEC

Figure

Test Circuit For Determining Delay

and Rise Time

*Pulse conditions of 300 ^sec duration,

2%

Time

Figure 2 Test Circuit For Determining Storage Time

and

duty cycle.

1204

Fall

Time

Silicon Monolithic

Darlington Amplifiers
GES5305,GES5307
CONSUMER-INDUSTRIAL

GES5306.GES5308

GES5306A,GES5308A
6A, 7, 8, 8A are NPN, silicon, planar, epitaxial, passiyated
Darlington monolithic amplifiers. These devices are especially suited for preamplifier input
stages requiring input impedances of several megohms or extremely low level, high gain, low

The General

Electric

GES5305,

6,

medium speed

noise amplifier applications. Additional applications include

in consumer and industrial control applications.

maximum

absolute

ratings:

GES5306A

VC BO
V nFn

Vebo

Current
Collector (Steady State)
Collector (Pulsed)*
Base (Steady State)

25
25
12

(unless otherwise specified)

GES5307
GES5308
GES5308A
40
40
12

25C)tt
25 <C)ttt

SEATING PLANE

300
500
50

mA
mA
mA

Pt
Pt
Pt

400
600
900

mW
mW
mW

SYMBOL
A

1/32" from

case for 10 sec.

*Pulse conditions: 300 (Usee, pulse width,

2% duty

1.

+260T

jtDerate

3.

electrical characteristics: (25)

Equiv. Circuit

Collector to
Collector to

6A
6, 6A
Base Breakdown Voltage (I c = 0.1 jUA, c = 0) GES5307, 8, 8A
0) GES5307, 8, 8A
Emitter Breakdown Voltage (I c = 10mA, Ib
(I c = 0.1 /UA, I c = 0) GES5305, 6,
Breakdown Voltage (l c = 10mA, I B = 0) GES5305,

Breakdown Voltage

(I E

= 0.1

jUA,

3.1

2.4

E = 0)

Forward Current Transfer Ratio

(V CE = 5V, I c = 2mA) GES5305, 7
(V CE = 5V, I c = 100mA) GES5305, 7
(V CE = 5V, I c = 2mA) GES5306, 6A, 8, 8A
(V CE = 5V, I c = 100mA) GES5306, 6A, 8, 8A
I E = 0)
= 25V, I E = 0,

.0

2 2

.0

90

.20 5
.12 5 .16 5
.09 5
5
.1

2.670

.0

1,3

75

.1

50

L2

6.3 5

1.270

2.92

2.0 3

2.670

1.250
.1

.0

80

1,3

3
3

.05

2
1

.1

(THREE LEADS) b2 APPLIES BETWEEN L AND Lz

<f,b APPLIES BETWEEN L2 AND 12.70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.
t

MAX.

V( B R)CBO

25

Volts

V (BR)CEO

25

Volts

V(BR)CBO

Volts

V (Bn)CEO

40
40

V(BR)EBO

12

Volts

Volts

20000

2000
6000
7000
20000

hFE
hFE
hFE
hFE

70000

'CBO
!cBO
IcBO
'CBO
ebo

= 25V,

TA

4.1

.0

8 2

5.2

NOTES

.21

1.39 5 .045 .055

3.430 4.32
.13 5 .170

12.700
.500
I.I

Li

Collector Cutoff-Current

(V CB
(V CB
(V CB
(V CB

80

.4

.170

THREE LEADS

MIN.

Emitter to Base Breakdown Voltage

5.3 3
.5 5

INCHES
MIN. JMAX.

(unless otherwise specified)

STATIC CHARACTERISTICS
Collector to Base

COLLECTOR

THIS SIDE.

cycle,

mW/t for increase in ambient temperature above 25t.

6.0 mW/T for increase in ambient temperature above 25^.
9.0 mW/t for increase in case temperature above 25^.

Collector to Emitter

.4

BASE

3.

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

t Derate 4.0

ttt Derate

7
7

.4

4.4 5

NOTES:

4.3 2

*D

EMITTER

2.

MILLIMETERS
MIN.
MAX.

*b2

ei

-65 to+150t
-65 to+1251C

T
max. T L

I.

TO-92

Volts
Volts
Volts

Ir
Ic
Ib

Tstg

1
2

Temperature
Storage
Operating
Lead, 1/16"

2- _D
?

Dissipation

S
g

f>b

Total Power (T A S 25<C)t

Total Power with Heatsink (T A
Total Power with Heatsink (T c

-o3

L^k

(25C)
GES5305
GES5306

Voltages
Collector to Base
Collector to Emitter
Emitter to Base

-1-

switching circuits

= 100C)

= 40V,I E = 0)
= 40V, I E = 0, T A = 100T)
Emitter Cutoff Current (V EB = 12V, I c = 0)

nA

100
20
100
20

MA
nA
MA

100

nA

Collector Emitter Saturation Voltage

(I

c = 200mA, I B = 0.2mA)

Base Emitter Saturation Voltage

(I c = 200mA, I B = 0.2mA)

Base Emitter Voltage (V CE = 5V,

c = 200mA)

Vbe(sat)

1.4

Volts

V CE(SAT)

1.6

Volts

Vbe

1.5

Volts

Forward Current Transfer Ratio

(V CE = 5V, I c = 2mA, f = 1kHz) GES5305, 7
(V CE = 5V, I c = 2m A, f = 1kHz) GES5306, 6A, 8, 8A
(V CE = 5V, l c = 2mA, f = 1kHz)
Gain Bandwidth Product (V CE = 5V, I c = 2mA, f = 10 MHz)
Input Impedance (V CE = 5V,

c = 2mA,

Collector Base Capacitance (V CB = 10V, f = 1

Emitter Capacitance (V EB = 0.5V,

GES5306A, 8A

h fe
hfe
hfe|

fx

2000
7000

dB

15.6

MHz

30

kHz)

h ie

650

MHz)

Ccb
c eb

10.5

= 1 MHz)

MAX.

TYP.

MIN.

DYNAMIC CHARACTERISTICS

10

7.6

pF

only:

c = 0.6 mA, V CE = 5V, R G = 160kfi

f= 10 Hz to 10kHz, B.W. = 15.7 kHz)

Noise Voltage

(I

230

195

e-n

1205
NOTE:

kohm
pF

As measured on
15.7 kHz)

filter.

Quan-Tech Model 2283/21 81 M

test set

with 10 Hz

filter

modified by Quan-Tech to

wideband

(f

nV/VHz

= 10 Hz to 10 kHz, B.W. =

GES5305, GES5307
Typical Curves

GES5306, GES5308

GES5306A, GES5308A

Normalized hpE vs 'c

-

Typical h FE

vs.

VCE

5V

1111/
Tfc-

III

VCE = 5.0VOLTS

IOOK

80K

'ta -25

bOK

GES5306, 6A
GES5308, 8A
^

.^
*>

.-" ^^'

j IOK

6K

GES5305J

<

O
Z

Ta = 100 c

z
o
tz

*-

o
.01

.02

.04.06

.1

.2

-4

.6

Ic

2
4 6 8 10
20
40 60 100
COLLECTOR CURRENT (m A)

200 400

uO.5

1000

0.0
0.01

0.1

V CE

1000

CURRENT-mA

vs. I<

*c' i b .ic 00

TA

100

10

I c -C0LLECT0R

0.8

5"

*-

ta 25 e C

0.6

t-

_J

4
<o
B 02

I c -C0LLECT0R

v BE (SAT)
C

vs 'c

Transconductance Characteristic,

2.0

f
g

CURRENT-mA

I c /I B -I000

VCE

5V

1.8

Ta- 55"C^

ta-

55 'C

ta 25*C

1.4

Ta-zs^
1-

ta- 00*C

TA I00C

Ul

4
OQ

p0.8

>

w.o

IC-COLLECTOR CURRENT-mA
I c -C0LLECT0R

1206

CURRENT-mA

Vb e

vs.

GES5305, GES5307
'CBO vs T A

EBO

ICBOV.

vs.

GES5306, GES5308

T/

GES5306A, GES5308A
'ebo v
V EB -5V

T^

VCB =!

h FE

vs.

TA

40

'

3.0

VCE 5V

<

o
8

"

,,

e
s
X'lc" 200mA

<
s

-30 -20

-(0

20 30 40 50 60
10
TA - AMBIENT TEMPERATURE -*C

70

80

90

-30 -20

-tO

20

10

30

40 50

60

80

70

90

10

OS

AMBIENT TEMPERATURE -*C

200mA^^

ic

C"""*
|

-60

Equivalent Input Noise Voltage and Current

vs. Bias

-40

-20
20
40
60
TA -AMBIENT TEMPERATURE - *C

80

100

120

I4C

Current

TA *25C
rE-.

o PTIMUM SOURCE RESISTANCE, R

^^^n (100Hz)

,*>

in(IOOHz)

.-''
o

--^

^,-.'

*'

-- ~"
1

,.^

Si
S,

in(lkHz)

--
4

6
a
COLLECTOR

.in(IOKHz)

CURRENT - mA

I
to the noise characteristics of this device versus frequency, calculation of noise figure (N.F.)
case with field effect transistors (F.E.T.'s)]

NOTE: Due

1207

from

efj,

values

is

not accurate

[as is

the

GES5305, GES5307

GES5306, GES5308

Typical Collector Characteristics

GES5306, GES5308A

TA

100-C

220

IB'T^A

TA -25C

200

jB-jA

I B -24 M A_

TA --55'C

lB-6,iA
iao

(80

I B -22mA_

E
[

IfifA

<
I B =2,uA

5
II

H
z
1

"

'

i B .m^A

1'

140

IB!

IB "**

20

3
^

IB'3(.A

120

I6

MA

Ib- 4^A

'00

-
1

II

IB

o
is- *A

"fin

lB'8"A

5'2A

iB-e^A

f,

lB-4/iA

=IO/i a

,.|A

0.2

0.4

0.6

Q
0.2

VCE -COLLECTOR-EMITTR VOLTAGE-VOLTS

VCE -COLL ECTOR -EMITTER VOLTAGE -VOLTS

0.4

0.6

VCE -COLLECTOR-EMfTTER VOLTAGE- VOLTS

i
1

T ^ 100' c

TA -25-C

"^A,

*B

TA = ~55 e C

220
t

B -6^A^"

200

200

A^*

I B "5/<

I B 'I2mA^,
180

^^

*B -2^A

160

-4 M A

I b I0m A-^-

120

UJ

e =3 M
100

ft

I B .8 " A

--

100

80
60
I B"**
X B"'**'

'

J%r~~~

-,
=

40

4*A

Ib-i>a
II

V ce -COLLECTOR-EMITTER VOLTAGE -VOLTS

J-

VCE -COLLECTOR-EMITTER VOLTAGE- VOLTS

1208

2*A

._
VCE -COLLECTOR-EMITTER VOLTAGE-VOLTS

Silicon

Transistors

GES5368, 69
GES5370,

The General

Electric

applications.

For complimentary

abSOlUte

NPN

GES6371
GES5368
medium current

designed as a

transistors

maximum

PNP

silicon
are planar, epitaxial, passivated
switch and for general purpose amplifier
GES5375 specifications.
types see GES5372

ratings:

(T A

= 25C

VcEO
VcBO
Vebo

unless otherwise specified)

1-2

GES5368
GES5369
GES5370

Voltages
Collector to Emitter
Collector to Base
Emitter to Base

L
.SEATING PLANE

GES5371

30
60

30

Volts
Volts
Volts

40

Current
Collector

SYMBOL
A

mA

500

Dissipation

Total Power T a ^25C

Derate Factor T A > 25C

.4

.4

80

3.1

2.41

mW/C

2.87

4.4 5

I.I

Tj

T ST

-65 to
-65 to

Tl

+260

+
+

12.700

Ll

L2

6.3 5

C
C

150
150

BASE

COLLECTOR

INCHES

MAX.

MIN. MAX.

5.3 3

170 .210

.5

48

6 .022
6 .019
.17 5 .205
.12 5 .165
.09 5 .105
.0

5200
9
2.67
4.1

.0

NOTES
1.3

4.32

1.270

2.0 3

.13 5 .170

.500

.2 50
5

2.670 .080

.10

.1

1,3

.05

3
2

NOTES:
1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

1/32" from

case for 10 sec.)

EMITTER

50 1.395 .045 .055

3.4 3

2.920

Storage

Lead (1/16"

Watts

360

MIN.
4.3 2

f>b

*D

TO- 92
MILLIMETERS

fa

Temperature
Operating

71

electrical characteristics

(T A

THIS SIDE.
3.

(THREE LEADS) *b2 APPLIES BETWEEN L) AND L 2

*b APPLIES BETWEEN L2 AND I2.70MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L, AND BEYOND 12. 70 MM (.500")
FROM SEATING P1.ANE.
.

25 C unless otherwise specified)

Min.

Max

Units

STATIC CHARACTERISTICS
Breakdown Voltage

Symbol

(Ic = 10mA, I B - 0)
Collector-Base Breakdown Voltage

V (BR)CEO'

30

Volts

V (BR)CBO

60

Volts

V (BR)CBO

40

Volts

V (BR)EBO

Volts

Collector-Emitter

(I

10uA, Vbe

0)

GES5368, GES5369, GES5370

Collector-Base Breakdown Voltage

(Ic = 10uA, I E = 0) GES5371

Emitter-Base Breakdown Voltage
(Ie = 10uA, I c = 0)
Collector Cutoff Current

40V, I E
(Vcb
0) GES5368,
Collector Cutoff Current
30V, I E = 0) GES5371
(Vcb
Emitter-Base Reverse Current

GES5369, GES5370

(V EB = 3 V, I c = 0)
Forward Current Transfer Ratio
(Vce = 10V, Ic = 1mA) GES5368
(Vce = 10V, Ic = 1mA) GES5369
(V CE = 10V, Ic = 1mA) GES5370
(V CE = 10V, I c = 1mA) GES5371
Forward Current Transfer Ratio
(V CE = 10V, Ic = 10mA) GES5368
(V CE = 10V, Ic = 10mA) GES5369
(V CE = 10V, Ic = 10mA) GES5370
(V CE = 10V, Ic = 10mA) GES5371
Forward Current Transfer Ratio
(Vce = 10V, Ic = 150mA) GES5368
(Vce = 10V, I c = 150mA) GES5369
(V CE = 10V, I c = 150mA) GES5370
(V CE = 10V, I c = 150mA) GES5371

IcBO

50

nA

ICBO

50

nA

Iebo

50

nA

h FE
h FE

20
50

h FE

75

h FE

20

h FE

40

1FE

75
150

h FE >
h FE .

40
60

h FE *
h F E*

100

h FE ,

200
60

1209 hep.

I
200
300
600
600

GES5368, 69
ELECTRICAL CHARACTERISTICS (CONTINUED)
Symbol
Min.

GES5370, 71
Collector-Emitter Saturation Voltage
(Ic = 150mA, Ib
15mA)
Base-Emitter Saturation Voltage

(I c = 150mA, I B
Base-Emitter Voltage

= 15mA)

(V CE

= 150mA)

10V, Ic

Max.

Units

V CE(SAT)*

.3

Volts

V BE(SAT)

1.3

Volts

1.2

Volts

BE(ON)*

DYNAMIC CHARACTERISTICS
Collector-Base Capacitance
(V CB = 10V, I E = 0, f = 1MHz)
Forward Current Transfer Ratio

Cm

= 10V, I c = 20mA, f = 100MHz)

SWITCHING CHARACTERISTICS
(V CE

Turn-on Time, Figure I

(Ic = 150mA, I B
Turn-off Time, Figure 2
(Ic = 150mA, Ibi

= 15mA V cc =

B2

GES5368, GES5369
GES5370, GES5371
*Pulse Width

300

30V)

40

nsec

350
400

nsec
nsec

30V)
L

OFF

2%
-

+ I6V

2.5

= 15mA V cc =

M sec, duty cycle

pf

(Jj

ZfiSEC
PW<20Cy*SEC

t, <

C )N

<

C^)

-VW

-30V

WpF

szooil

TO
OSCILLOSCOPE

>J

Z IN

PW2l>iSEC
t r at f i7/tSEC

BISETIMEiSnS

DUTY CYCLE <2%

C| N

(IOOhA
<l2pF

RISE TIME <5nS

ill

+30V

FIGURE

FOR DETERMINING
TURN-ON TIME

TEST CIRCUIT

1.

FIGURE 2. TEST CIRCUIT FOR DETERMINING

TURN-OFF TIME

TYPICAL CHARACTERISTIC CURVES

ii

,"

<

JT

vCE -iov

-IT

iiiiiii

?fft

ic-ioi

\,
i

"\

-J&

:-

\
1

LI'Tj

=^

i
s
i

yf
trftflr

^;

J&"
:

CEV.

5-" 6^

4tt

|
III

I
1
1

^ntlf
pr

BETA VS. COLLECTOR CURRENT

^"nufli

!i2rttf

BASE-EMITTER SATURATION
VS.

COLLECTOR CHARACTERISTICS

S,c

=^

i
i

+4
T"

f\

rd

T' 25-C

^5^

,<-

J -

yXa

n
i

-V'

rt-

H"

Mi

>

Hi
u.

i
1

nJo

COLLECTOR-EMITTER SATURATION VOLTAGE

VS.

COLLECTOR CURRENT

1210

-iMo

VOLTAGE
COLLECTOR CURRENT

Silicon

Transistors

GES5372, 73

GES5374, 75

The General

Electric

transistors designed

For complimentary

applications.

are planar, epitaxial, passivated PNP silicon

switch and for general purpose amplifier
GES5371 specifications.
types see GES5368

GES5375
GES5372
a medium current

as

Voltage and current values for

NPN
PNP

are negative: Observe proper bias polarity.

aosoiute maximijm ratin gS:

(T A

25 C unless otherwise specified)

-7

GES5372
GES5373
GES5374

Voltages
Collector to Emitter
Collector to Base
Emitter to Base

VcEO
VcBO
Vebo

Current
Collector

TO-92

GES5375

30
50

30
40

SYMBOL

Volts
Volts
Volts

*b

mA

500

.4

.4

4.4 5
3.1

e
1

2.41

LZ
Q

mW/C

2.87

80

Li

Watts

360

5.3 3

4.3 2

4>D

Pt

MILLIMETERS
MIN.
MAX.

*t>2

Dissipation

.5
.4

INCHES
MAX.
.210

MIN.
.17

.0

8 2

.0

5.2
4.1

3.

EMITTER
BASE
COLLECTOR

.0

22

6 .0 9
7 5 .20 5
.12 5 .16 5
1

NOTES
1.3

.1

90

2.67

.09 5

.1

I.I
50 1.395 .045 .055
3 5 .170
3.430 4.32

12.700

S.3 5

2.92
2.0 3

.1

.5

1.270

.2
.1

00
-

.05

50
1

2.670 .080

1,3

3
3
2

.10 5

NOTES:

Temperature
Operating

Tj

-65 to
-65 to

T STG

Storage

Lead (1/16"

I.

2.

lr

Total Power TA < 25 C

Derate Factor TA > 25

-E-N

SEATING PLANE

+
+

C
C

150
150

TL

electrical Characteristics:
STATIC CHARACTERISTICS
Breakdown Voltage
(I c = 10mA, I B = 0)
Collector-Base Breakdown Voltage
(I c = 10
Vbe = 0)GES5372,

Collector-Emitter

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.

(THREE LEADS) cb2 APPLIES BETWEEN L, ANDLg.

<pb APPLIES BETWEEN L2 AND I2.70MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

3.

1/32" from

case for 10 sec.)

1.

-260

(T A

=25C

unless otherwise specified)

Units

Symbol

Min.

V( B r>ceo

30

Volts

V(br)cbo

50

Volts

V(br>cbo

40

Volts

^(br)EBO

Volts

Max.

M,

GES5373, GES5374
Collector-Base Breakdown Voltage
(I c = lOuA, I E = 0)GES5375
Emitter-Base Breakdown Voltage
(I E = lOuA, Ic = 0)
Collector Cutoff Current
(V CB
40V, I E
0)

GES5372,

GES5373, GES5374

C bo

50

nA

I C bo

50

nA

50

nA

Collector Cutoff Current

(V CB

30 V,

IE

0)

GES5375

Emitter-Base Reverse Current

(V EB = 3 V, Ic = 0)
Forward Current Transfer Ratio
(Vce = 10 V, I c = 1mA) GES5372
(Vce = 10 V, I c = 1mA) GES5373
(Vce = 10 V, I c = 1mA) GES5374
(Vce = 10 V, I c = 1mA) GES5375
Forward Current Transfer Ratio
(Vce = 10 V, I c = 10mA) GES5372
(Vce = 10 V, Ic = 10mA) GES5373
(V CE = 10 V, I c = 10mA) GES5374
(V CE = 10 V, I c = 10mA) GES5375

EBO

20
50

100

'FE

20

h FE .
h F E.
h FE .

30

h FE .

75
150

1211

30

GES5372, 73
ELECTRICAL CHARACTERISTICS (CONTINUED)

GES5374, 75

Symbol

Forward Current Transfer Ratio

(V CE = 10 V, I c = 150mA) GES5372
(Vce = 10 V, I c = 150mA) GES5373
(Vce = 10 V, I c = 150mA) GES5374
(Vce = 10 V, I c = 150mA) GES5375
Collector-Emitter Saturation Voltage

U FE*
h FE .
h FE .
h F E*

(Ic = 150mA, I B = 15mA)

Base-Emitter Saturation Voltage
(Ic = 150mA, I B = 15mA)
Base-Emitter Voltage

(V CE

10 V,

Min.

Max.

60

200
300
400
400

100

150
40

Units

.3

Volts

V BE(SAT)*

1.3

Volts

V BE(ON)*

1.2

Volts

= 150mA)

CE(SAT)*

DYNAMIC CHARACTERISTICS
Collector-Base Capacitance

(V CB = 10V, I E = 0, f = 1MHz)
Forward Current Transfer Ratio
(Vce- = 10V, I c = 20mA, F = 100MHz)

10

pf

50

nsec.

150
175

nsec.
nsec.

1.5

SWITCHING CHARACTERISTICS
Turn-on Time, Figure 1
(Ic = 150mA, I B1
Turn-off Time, Figure 2
,

(I c

= 150mA,

V Cc =

B i,

= 15mA Vce =
=

30V)

= 15mA,

I B2

6V) GES5372, GES5373,

GES5374, GES5375
*Pulse Conditions of 300

/xs

duration,

INPUT
z - so
PRF>I50PPS
RISE TIME S2riSEC
1

ON

2% Duty

OFF
OFF
Cycle.

INTUT
-Z<j =

TO OSCILLOSCOPE
RISE TIME SSnSEC

50fi

TO OSCILLOSCOPE

ERF-I50PPS
RISE TIMESZnSEC

RISE
IK

O-

Z|

-W\<-

2O0nS

FIGURE

1. TEST CIRCUIT FOR DETERMINING

DELAY TIME AND RISE TIME

TIME<5nSEC

N 'IOMfl

FIGURE

2. TEST CIRCUIT FOR DETERMINING

STORAGE TIME AND FALL TIME

TYPICAL CHARACTERISTIC CURVES

-3
fc

J||

-i'.J

^h

mi

,r--

-Wk5"

1.

.-.

"1

&~~

iS-

III

"

l-

^SPt

~Jf^
;J1 i

III

<<

IP

%
9-C

III
s

is

1
'I

llll

III

sty

-gp^

c
% Ln' , _

's '/
**

\\

BETA VS. COLLECTOR CURRENT

COLLECTOR CHARACTERISTICS

BASE-EMITTER SATURATION

s^m

VS.

tn

1
1

<

I_

i
i

._k zjM
7&

t=z

w
'

-yu

li p/i-/

j..

III

COLLECTER-EMITTER SATURATION

VOLTAGE

VS.

flfflT
III

!v

COLLECTOR CURRENT
1212

VOLTAGE

COLLECTOR CURRENT

Silicon

Transistors

PNP

The General

Electric GES5447 and GES5448 are silicon,

planar, epitaxial, passivated transistors, designed for general audio frequency applications and linear amplifiers. For complimentary
types see GES5449, GES5450 and GES5451 specification.
Voltage and current valves for
are negative, observe proper bias polarity.

NPN

k=

T5I -<J3^
- ?2

PNP

*b

absolute

maximum

ratings:

(t a

=25c

unless otherwise specified)

VcEO
VcBO
Vebo

40

30
50

25

Ic

Dissipation

Total Power TA ^ 25 C
Total Power T c ^ 25 C
Derate Factor T A > 25C
Derate Factor T c >25C

Pt
Pt

SYMBOL

Volts
Volts
Volts

A
fb

raA

7
7

.4

3.1

2.41

et

I.I

.5
.4

5
8 2

5200

4.4 5

9
2.67

4.1

50 1.395

3.4 3
4.32

12.700

mW/C
mW/C

2.88
4

5.3 3

.4

Watts
Watts

360
DUU

MILLIMETERS
MAX.
MIN.
4.3 2

*b2

L|

L2

6.3 5

MIN. MAX.
.17
.0

.0

.1

75

.12 5

.09 5
45
35

.0
.1

.500

1.270

6
6

.210
.Q22
.01 9
.205
.165
.105
.055
.170

.2

.05

50

15
2.0 30 2.670 .080 .10 5

2.920
s

.1

1.

TsTG.

65 to

1,3

3
3
2

THIS SIDE.
3.

+260

T,.

THREE LEADS
(THREE LEADS) *b2 APPLIES BETWEEN L) AND L2
*b APPLIES BETWEEN L2 ANO 12.70 MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UN-

CONTROLLED IN L. AND BEYOND

FROM SEATING PT.ANE.

electrical characteristics:

= 10mA,

=0)

12.

70 MM

(.500")

(T A =25 C unless otherwise specified)

GES5447
STATIC CHARACTERISTICS
Collector-emitter breakdown voltage
c

1.3

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

150

1/32" from

case for 10 sec.)

(I

NOTES

NOTES:

Temperature
Storage
Lead (1/16"

BASE
3. COLLECTOR
INCHES

TO- 92

200

2.

*D

Current
Collector

.- E
(EMITTER

SEATING PLANE

GES5448

GES5447
Voltages
Collector to Emitter
Collector to Base
Emitter to Base

r-oa

GES5448

Max.

Min.

Max.

Symbol

AAin.

V(BR)CEO

25

30

Volts

V(BR)CBO

40

50

Volts

V(BR)EBO

Volts

Units

Collector-base breakdown voltage

(I c

lOOuA,

IE

0)

Emitter-base breakdown voltage

(I E

lOOuA,

0)

Collector cutoff current

(Vcb

20V,

0)

IcBO

100

100

nA

Iebo

100

100

nA

Emitter-base reverse current

(Veb

=3V,I c =0)

Forward current transfer ratio

(V CE = 5V, I c = 50mA)

60

h F E

300

30

150

Collector-emitter saturation voltage

(I

= 50mA,

= 5mA)

.25

VcE(sat)*

.25

Volts

Volts

Base-emitter voltage

(Vce

5V,

Ic

= 50mA)

VnEronl*

.6

.6

DYNAMIC CHARACTERISTICS
Collector-base capacitance

(Vcb

10V,

0, f

C cb

= 1MHz)

Forward current transfer ratio

(Vce = 5V, I c = 50mA, f

12

= 20MHz)

*Pulse Conditions: Pulse Width

300 ^ s and duty cycle

< 2%
1213

12

pf

GES5447,8

TYPICAL CHARACTERISTIC CURVES

1

T^-55-_

lp~
Vf^S,

-COLLECTOR CURRENT-i

VOLTAGE

BASE-EMITTER SATURATION

BETA VS. COLLECTOR CURRENT

VS.

HI

~1

COLLECTOR CURRENT

Milt

tftt

T
_ -_I C

.ZOIB

^j'"

A"

/,

' ==

'12

.'
-

::

V-ss-c
II

COLLECTOR CHARACTERISTICS

t a- c -

fr~i

" 25

*'--

._

..

-01

D.0<

-ID

-10

oo

-COLLECTOR CURRENT-!

COLLECTOR-EMITTER SATURATION

VOLTAGE

I
1214

VS.

COLLECTOR CURRENT

-IOC

Silicon

Transistors

NPN

planar, epiElectric GES5449, GES5450 and GES5451 are silicon

passivated transistors designed for general audio frequency applications and linear
amplifiers. For complimentary PNP types see GES5447 and GES5448 specifications.

The General
taxial,

absolute

maximum

ratings:

<r A

25c unless otherwise

GES5449
GES5450
Voltages
Collector to Emitter
Collector to Base
Emitter to Base

V C eo
Vcbo
Vebo

specified)

^7 -J

GES5451

30
50

20
40

SEATING PLANE

Volts
Volts
Volts

Current
Collector

*b

raA

800

Ic

ibz

+D
Dissipation

Total Power T A g 25C

Total Power T c g 25C
Derate Factor T A > 25C
Derate Factor T c = 25C

Temperature
Storage
Lead (1/16"

PT
PT

T STg

Watts
Watts

.360
.500
2.88
4

-65 to

40

BO

3.1

2.41

Li

7
7

4.4 5

1.

I.I

L2

6.350
2.920

2.0

MIN.

MAX

.210
.0
6 .0??
.4 8 2 .0
6 .01 9
5.200 .17 5 .205
5.3 3
.5 5

.17
1

90

4.1

2.67

50 1.395

3.4 3

12.700

COLLECTOR

4.32

.1

.1

.500

.250
5

30 2.670

.12 5
65
.09 5 .105
.04 5 .05 5
3 5 .170

1.270

1.3

.1

.0

.05

80

1,3

3
3
2

.10 5

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

1/32" from

TL

case for 10 sec.)

40

3.

INCHES

NOTES:

150

4.3 2

E
t

mW/C
mW/C

MILLIMETERS
MIN.
MAX.

EMITTER
BASE

TO-92
SYMBOL

2.

THIS SIDE.
3.(THREE LEADS) *b2 APPLIES BETWEEN Lt AND L 2
*b APPLIES BETWEEN L2 AND 12.70 MM (.500")

+260

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND I2.70MM 500")
FROM SEATING PLANE.
(

electrical characteristics:

(T A

25 C unless otherwise specified)

GES5449
Symbol

STATIC CHARACTERISTICS
Collector-Emitter

Min.

Max.

GES5450
Min.

Max.

GES5451
Min.

Max.

Units

Breakdown Voltage

(Ic = 10mA, I B - 0)
Collector-Base Breakdown Voltage
(I c = 100 uA, I E =0)
Emitter-Base Breakdown Voltage

(BR)CBO

20
40

30
50

30
50

(BR)CEO*

Volts
Volts

V (BR) E BO

Volts

lOOuA, I c
0)
E
Collector Cutoff Current
(I

(Vcb

20 V,

=0)

Emitter-Base Reverse Current

(V EB = 3 V, Ic = 0)
Forward Current Transfer Ratio
(V CE = 2 V, Ic = 50mA)
Collector-Emitter Saturation Voltage
(I c

100mA,

Tb

100

100

100

nA

Lebo

100

100

100

nA

100

= 5mA)

Base-Emitter Voltage
(V CE = 2 V, Ic =

LCBO

300

50

150

30

V,CE(SAT)

V BE(ON)*

100mA)

.5

.5

.5

600
1

Volts

Volts

DYNAMIC CHARACTERISTICS
Collector-Base Capacitance
(Vcb = 10 V, I E = 0, f = 1MHz)
Forward Current Transfer Ratio
(V CE = 2 V, I c = 50mA, f = 20MHz)

*Pulse Conditions: Pulse Width

C CB

12

h FE

300 n$ and duty cycle

S 2%
1215

12

12

pf

GES5449,

50, 51

TYPICAL CHARACTERISTIC CURVES

<x

^y

TA

*n

25*C

-^ "
/
-^ ^ /
-^ ^
'

^
1

'

"1
BOf A

'
60 ^A

|
I

40*A

10

15

V CE

=0

20

2ft

s s
I2&

Ic

COLLECTOR

CURRENT-mA

VOLTAGE
COLLECTOR CURRENT

BASE-EMITTER SATURATION
VS.

;.

~t
/
DID

ie

i
i

/
i

*'

-.

30

35
-

40

45

VOLTS

COLLECTOR CHARACTERISTICS

c - COLLECTOR CURRENT-mA

BETA VS. COLLECTOR CURRENT

i
25

COLLECTOR CURRENT

:.

'

Si

^~~-

Eu- ..

f
-.

_St_

d
:

;-

COLLECTOR CURRENT-

COLLECTOR-EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT

1216

50

Silicon

Transistors

121 ^s) 129

@ESI@

GES5810
GES5812

GES5811
GES5813

These silicon, planar, passivated, epitaxial transistors are intended to satisfy a wide range
of general purpose applications at audio and intermediate frequencies.
Features:

Excellent Gain Linearity over Wide Range

of Collector Currents to
500mA and Beyond.

High

Collector Current Ratings: 1000

Voltage and current values for

absolute

maximum

Integral Heat Sinks

GES5810-J1

Available. Order as

EMITTER

etc.

Epoxy Encapsulation with Proved

mA.

PNP devices
ratings:

Reliabilexcellent characteristic stability under

ity
environmental stresses, 85C 85% RH.

(25C

unless otherwise specified)

Voltages
Collector to Emitter

Emitter to Base
Collector to Base
Collector to Emitter

Vk

35
35

v,..

Current
Collector (Continuous)
Collector ( Pulsed, 300 M sec.
pulse width, < 2% duty cycle)

SYMBOL

I,

In,

750

mA

1000

mA

COLLECTOR

f>b

MILLIMETERS

.4

4.4 5
3.

2.41

L
Ll

5
8 2

.5
.4

5.2

80

90

4.1

2.67

50 1.395

I.I

MIN.

5.3 3

7
7

.4

4,0

INCHES

MAX.

MIN.
4.3 2

fa

ei

Volts
Volts
Volts
Volts

25

V,-Kn

BASE

3.

T0-9Z

are negative; observe proper bias polarity.

2.

4.32

3.4 3

12.700

.17

6
6
.17 5
.12 5
.09 5
.0 4 5
.13 5
.0

.0

6.3 5

2.920

2.0 3

.2

2.670

.0

.1

.01

.10 5

55

.0

.170

1,3

.05

80

1.3

.20 5
.16 5

50
1

NOTES

22
9

.0

.500

1.270

LZ

MAX.
10

.2

3
2

.10 5

Dissipation

Total Power (Free Air,

T,
Total

25C)i

mW
mW
mW

500

Pi

Power with Heatsink

REFERENCE

(Free Air, T, 25C)-'

700
P,
Total Power with Heatsink
1000
(Case Temp., T,- ;? 25C)
Pt
Temperature
65 to +150
C
Storage
Tkt,;
-65 to +135
C
Operating
T.,
Lead soldering- ('/li," l-a"
from case for 10 sec. max.)
+260
'Derate 4.55 mW/C increase in ambient temperature above 25C. ^Derate 6.36 raW/'C
increase in ambient temperature above 25C. ''Derate 9.09 mW/C increase in case temperature above 25C.
:I

electrical characteristics: (25C unless otherwise specified)

NOTE Characteristics apply to both heatsinked and non-heatsinked devices.
:

STATIC CHARACTERISTICS
Collector Cutoff Current (Vcr = 25V)
(Vcn = 25V, Ta=100C)
Emitter Cutoff Current

Min.

IcBO
ICBO

5V)
Forward Current Transfer Ratio
(I,. = 2 mA, V< = 2V)
(y,:

I,:,.o

Max.
100
15

nA
mA

10

<*A

h,

*h rE

Collector-Emitter Breakdown Voltage

(I, = 10 mA)
(lr= 10f.A)

Emitter-Base Breakdown Voltage

(U. = 10 M A)
Collector Saturation Voltage
(I,- = 500 mA, I = 50 mA)
Base-Saturation Voltage
(Ir = 500 mA, I = 50 mA)
Base-Emitter Voltage
(Io = 500 mA, Vrr. = 2V)

* VuiK'CKl.

V,H,r K s

60
150

TO -92

45
60
25
35

Volts
Volts

0.75

V,-K<S.

4>b2

.4

.4

VK

VE

.60

1.2

Volts

1.1

Volts

C,h

300jUs

Duty cycle < 2%

1217

pF

.0

6
6

I.I

50 1.39 5 .045

3.550

1.570
12.700

REF.

6.350

1.270

3630

3.96

qt

2.2

L2

REF.

REF.

3.9 6

.0

62

.40
.0 2
.0
.5

.1

.105
55

.0
.1

40

REF

.5

.2 50

.0

.145

5 6 REF.
87 REF.
Ll 5 6

t>2 APPLIES BETWEEN L] AND L2. ^bAPPLIES

BETWEEN L2 ft .5"(I2.70MM) FROM REFERENCE PLANE.
DIAMETER IS UNCONTROLLED IN L, AND BEYOND. 5"(I2.70MM)
FROM REFERENCE PLANE.
2.M0UNTING HOLE IS FOR #4 SCREW. HOLE WILL ACCEPT A
.1t3"(2.87MM) DIAMETER PIN INSERTED PERPENDICULAR
TO THE MOUNTING SURFACE.
I.

15

.0

ei

NOTES:
(THREE LEADS)

3 3
8 2

13.200
2.420 2.660 .095

*P
:

Collector-Base Capacitance
10V, f = 1 MHz)
(Vcb

<

.5

Volts

Volts

10.

.4

L)

*b
C

MILLIMETERS
INCHES
MIN. MAX.
MIN.
MAX.

.263
6.6 8 O

V.B.,

200
500

DYNAMIC CHARACTERISTICS

*Pulse Conditions: Pulse width

3.C0LLECT0R

SYMBOL

GES5810, GES5811
GES5812, GES5813
(I,- = 500 mA, V,,, = 2V)
GES5810, GES5811
GES5812, GES5813

EMITTER

I.

2.BASE

GES5810,

11

GES5812, 13

v
!V
ce"

pF

55

GES5810, GES5811
GES5812, GES5813

MHz

100
135

fx

Typical h KE vs.

Max.

Min.

Input Capacitance, Common Base

(Vkb = 0.5V, f = 1 MHz)
Gain Bandwidth Product
(Ir = 50 mA, Vck = 2V, f = 20 MHz)

MH:
Typical h FK vs.

I, :

G ESbt 110

GES58I3
GES58I2

s
JS

25'C

200

"--

S
IZS'C

ioo

>\

^^

-^

25*C

C bo vs.

\ >

_^

*
ss

^
2--C0LLECT0R CURI

I -COLLECTOR CURRENT-m

25* C
.

23*C

Typical

"--

^_

Figure

.^

\
s>

Z5'C

I25*C

Figure 2

Ambient Temperature

Power

vs.

Ambient Temperature Derating

1000.

Vcs

M
&A

25V

5
or

or

3
t

1.0

?//**-

//*

d
O

o
H

s\

//

Y7
F=H

O.I

0.8
0.6

/-,

7>^

0.4

/
f

fy

/?

00
20

40

60

80

125

'"

AMBIENT OPERATING TEMPERATURE - 'C

100

TA AM8IENT TEMPERATURE -*C

,

Figure 3

Figure
1218

150

IBS Ciw BHHi

QraQ

GES5814

GES5815

GES5816

GES5817

GES5818

GES5819

Silicon

Transistors

silicon, planar, passivated, epitaxial transistors are intended to satisfy a wide range
of general purpose applications at audio and intermediate frequencies.

These

Features:

Epoxy Encapsulation with Proved

500mA and Beyond.

Integral Heat Sinks Available. Order

H.S. as GES5814-J1 etc.

>

Excellent Gain Linearity over Wide

Range of Collector Currents to

High Collector Current Ratings

maximum

TO-92

85C85% RH.

1000 mA.
Voltage and current values for

absolute

EMITTER

Reliability
excellent characteristic
stability under environmental stresses,

PNP

SYMBOL

devices are negative; observe proper bias polarity

ratings:

(25C) (unless otherwise specified)

Voltage
Collector to Emitter
Emitter to Base
Collector to Base
Collector to Emitter

40

VCEO

Vrbo

VCBO

50
50

VcKS

Volts
Volts
Volts
Volts

A
fb

.4

*D

4.4 5
3.1

2.41

ei
J

750

Ic

1000

I.m

I.I

.17

5
8 2

.0
.0
.1

90

4.1

L2

6.3 5

2.92

2.0

6
6

.0

NOTES

22

.01

1.3

75 .205

.12 5 .16 5
.1

.0

4.32

.13 5 .170

.500

1.270

12.700

MAX.
.210

.095
5
4 5 .055

2.67

50 1.395

3.4 3

L|

mA
mA

.4

COLLECTOR

INCHES

5.20

80

.5

BASE

3.

MIN.

5.3 3

7
7

.4

<r-b2

Current
Collector (Continuous)
Collector (Pulsed, 300 usee.
pulse width,
2% duty cycle)

MILLIMETERS
MAX.

MIN.
4.3 2

2.

.2

.1

30 2.670

.0

3
3

50
1

1,3

.05

80

.10 5

Dissipation

Total Power (Free Air,

Ta g25C)

n>

Pt

500

Pt

700

Pt

1000

Total Power with Heatsink

TA

g25C)<='
Total Power with Heatsink
(Case Temp., Tr^ 25C)""
Temperature
Storage
Operating
Leading soldering Gin" Ife"
from case for 10 sec. max.)
(Free Air,

-65 to +150
-65 to +135

TsTG
Tj

mW
mW
mW

REFERENCE

C
C
MOUNTING
SURFACE^J

+ 260

Ti.

"'Derate 4.55 mW/C increase in ambient temperature above 25C.

'"Derate 6.36 mW/C
increase in ambient temperature above 25C.
''"Derate 0.09 mW/C increase in case temperature above 25C.

electrical characteristics:
NOTE: Characteristics apply
STATIC CHARACTERISTICS

to both heatsinked

(25^C) (unless otherwise specified)

and non-heatsinked

devices.

EMITTER
BASE
3.C0LLECT0R
1.

Min.

Max.

2.

Collector Cutoff Current

(Vcb = 25V)
(Vcb = 25V, Ta=100C)

100

Icbo
Icbo

15

nA
mA

TO-92

Emitter Cutoff Current

(V BB

5V)

SYMBOL

10

Iebo

Forward Current Transfer Ratio

= 2mA, V rE =

*b

(Ic

2V)

GES5814, GES5815
GES5816, GES5817
GES5818, GES5819
(Ic

= 500mA,V CB =

100
150

(I E

hF

F
h

Breakdown Voltage

V (BR)CEO
V(RR)CER

40
50

Breakdown Voltage
V.BK )EBO

mA,

IB

50

Volts

*V CE SAT)
,

*Vbe

<

SAT)

*Vbk
Duty

300/Js

.60

cycle

0.75

Volts

1.2

Volts

1.1

Volts

< 2%
1219

NOTES:
(THREE LEADS)

13200 - .5 2
2.420 2.660 .09 5 .105
I.I 50
1.395 .045 .0 55
3.550 - .140
1.570 REF. .0 6 2 REF

12.700

*P
q

39 6

<t\

2.2

L2

ri

mA)

Base Saturation Voltage

(Ic = 500 mA, Ib = 50 mA)
Base Emitter Voltage
(Ic = 500 mA, Vce = 2V)
*Pulse Conditions: Pulse width

Volts
Volts

INCHES
MIN. MAX.
MAX.
263

6.6 8
.400

10.1 6
6 .02
.40 7
.5 3 3 .0
.4
7
.4 8 2 .0 16 .01 9
MIN.

1.270

6.350
3.630

Ll

10 M A)

500

300

20
25
25

*h FE
*h FE

Collector Saturation Voltage

(Ic

*t>2

ei

(Ic= 10 mA)
(Ic = 10mA)
Emitter Base

160
200

V)

GES5814, GES5815
GES5816, GES5817
GES5818, GES5819
Collector Emitter

60

hpE

MILLIMETERS

.050

.2 50

REF.

.1

REF.

.1

3.9 6

.5

56
87

.145
REF.
REF.
ll

56

tf.b-2 APPLIES BETWEEN L( AND L2. ^.bAPPUES

BETWEEN L2 a .5"(I2.70MM) FROM REFERENCE PLANE.
DIAMETER IS UNCONTROLLED IN L, AND BEYOND. 5"(I2.70MM)
FROM REFERENCE PLANE.
2.M0UNTING HOLE IS FOR #4 SCREW. HOLE WILL ACCEPT A
.113"(2.87MM) DIAMETER PIN INSERTED PERPENDICULAR
TO THE MOUNTING SURFACE.
I.

GES5814, 15

GES5816, 17
GES5818, 19

electrical characteristics:

(25C)

(unless otherwise specified)

DYNAMIC CHARACTERISTICS

Max.

Min

Collector-Base Capacitance

*(Vcb

= 1MHz)

10V, f

Input Capacitance,
(V EB
0.5V, f

Common

Ceb

15

pF

c,

55

PF

Base

= 1 MHz)

Gain Bandwidth Product

(Ic = 50 mA, Vce = 2V, f

20

MHz)

GES5814, GES5815
GES5816, GES5817
GES5818, GES5819
"Indicates

JEDEC

Registered values.

Typical b K vs.

GESS6IS

GE 55814

MHz
MHz
MHz

100
120
135

GES 5817
GES 5816

>

300

v.jv

Vci'ZV

>

>

rV
1

9
*

N,

\
\\

Tas*c

Z5'C
Z5*C

"^N
v-

\
>

fc

>

_JSr-

'

Nj

'

CURRENT-mA

Figure 2

GES sets
GES 5818

vce'2 v

2
125*

5
*

300

^^
^

I -COLLECTOR

u
>

V
^

50

\^

I_ -COLLECTOR CURRENT-ffiA

Figure

-Si

IZS'C
(

L-^.

TaS'C

"I

23'C

\l

'

--

s
'-

V
^

\\
"<!

V
s

Ic

-COLLECT0R CURRENT-mA

Figure 3

1220

'

GES5814, 15
GES5816, 17
Typical

V CE (sat)

(Ib

GES5818, 19
vs.

Typical

c,

lc/20)

(Ib

III

VCE (sat| vs.

= lc/10)

-Hft"

GESS8IS
6E S&B 14-

6ES58IS GES58I4-

^
I2S'C

1^

O
K

'

,'

25 C
25*C
23'C

&P
L^=.

.T,*

1.0

J.

JL

<

/ J/
J/

A*

,y^~z>-<:
Si
;2I

25"C

~^Z.

'23*C

.-

lis'C

I25'C

^; V-4--

0.1

a:

I25C

._

2 S'C

|I23*C

"<(^

<x

-.#-=

25'C

25-c-^.

^ V^

O.Of

0.1

I.-COLLECTOR CURRENT-mA

I_ -COLLECTOR CURRENT-mA

Figure 4

Figure 7

11

=|

'
1

<L

GES68 7

GES68I7
GE!358 6

6E 558 6-

</

o
12 5*C

<r.

^
^
^
V^
-V

^J
I2S'C

S.

^*\"

25'C

r 125 C

*v

'^ ,t*'//

lzVc\

A
,!/'

<

10

iAl
25-C,

2 s*c

Z5"C

P-

120

(,

I2S C

0.01

5*C

I--C0LLECTOH CURRENT-mA

I.-COLLECTOR CURRENT-mA

Figure 5

Figure 8

4+^
GES58I9-

'II

1
1

0ES58I9
GE S58 18-

GE 5S8 18/

izrc
\
'

^
'

23' C

-/
"7?

'/

//

23"C
li

2S"C

I25C

25-C

25*C

-?

I25'C
1

tf

*>

i'?

^ <i

IS'C

W/

5*C

*C

^t>

=*-

I25*C

-COLLECTOR CURRENT -wiA

Ic

-COLLECTOR CURRENT-mA

Figure 9

Figure 6

1221

'

,??

,'s

GES5814, 15
Typical

GES5816, 17

VBE m vs.

GES5818, 19

GES58I5--

GESB8I7
GES88I6

^y<'>

Vc"2V

4l

.^'7

V CI -2V

"",'/

Z5'C

-r^-

-"

~~Z.

^z

^Z

^.'j

^- s"
'
'

25* C

_^

IZ5 C

.-_;

r:

"^I25*C

25"C
'

I-COLLECTQR CURRENT-mA

I P -C0LLCCT0 CURRENT -*A

Figure 10

Figure

GES 5819 __
GES 588
V'2V

^.j

til

//
^A

-=

^^=3

-^

s-~/

25C
123'C^

^25*C

>"

I -COLLECTOR

CURRENT-mA

Figure 12

Typical

CBO vs.

Ambient Temperature

Power vs. Ambient Temperature Derating

POWER VS AMBIENT TEMPERATURE DERATING

CI

Z5V

//

j/

//*'-

b^
//
//

Vf~
J>

//

j?
-ZO

20
40
CO
BO
TA , AMBIENT TEMPERATURE -*C

K)0

IZO

25

SO

75

100

AMBIENT OPER/fTlNG TEMPERATURE

Figure 13

Figure 14
1222

125

IM
"C

ISO

Bgl^Slgl Q^ISSlS)

Silicon

Transistors

GES5820

GES5821

GES5822

GES5823

These silicon, planar, passivated, epitaxial transistors are intended to satisfy a wide range
of general purpose applications at audio low and intermediate frequencies.
Features:
Excellent Gain Linearity over

Range

Integral Heat Sinks Available. Order

Wide

asGES5820-Jl etc.
Epoxy Encapsulation with Proved

of Collector Currents to

Reliability
excellent characteristic
stability under environmental stresses,

High Collector Current Ratings

85C 85% RH.

mA.

1000

Voltage and current values for

absolute

EMITTER

500mA and Beyond

PNP

maximum

SYMBOL

devices are negative; observe proper bias polarity

ratings:

(25C) (unless otherwise specified)

Voltages
Collector to Emitter

VCEO

60

Emitter to Base
Collector to Base
Collector to Emitter

Vbbo
Vr
Vc,

Current
Collector (Continuous)
Collector (Pulsed, 300 M sec.
pulse width, ="l 2' duty cycle)
',

70
70

TO-92

Volts
Volts
Volts
Volts

*b

750

.4

$0

Icm

1000

Pt

500

Pi

700

Pt

1000

80

3.1

2.41

ei

I.I

Li

COLLECTOR

MIN.

MAX.

.17

.21

.5

.0

.4

8 2

.0

5200

6
6

2.67

.12

3.4 3

2.0 3

1.3

.20 5

.09 5

5
55

.1

.0

.13 5 .170

4.3 2

.500

1.270

6.350
2.920

.0

NOTES

5 .16 5

50 1.395 .045

12.700

22

.0

75

.1

90

4.1

BASE

3.

INCHES

5.3 3

7
7

.4

4.4 5

mA
mA

4.3 2

*b2

LZ
Ir

MILLIMETERS
MIN.
MAX.

2.

.2

.1

2.670

1,3

50
5

.0

.05

80

3
2

.10 5

Dissipation

Power (Free

Total

Air,

Ti^25C) (n
Power with Heatsink
(Free Air, T, =s?25C) a"
Total Power with Heatsink
(Case Temp., T,^25C)' "
Temperature
Storage
Operating
Total

TsTC.

T,

Lead soldering (Vkj" V.a"

from case for 10 sec. max.)

mW
mW
mW

65 to +150
-65 to +135

C
C

+ 260

Ti.

'"Derate 4.55 mW/C increase in ambient temperature above 25C.

increase in ambient temperature above 25C.
'"Derate 9.09 mW/'
perature above 25C.

electrical characteristics:
NOTE:

REFERENCE

-"Derate6.36mW/ C

(;

C increase

in

case tem-

(25C) (unless otherwise specified)

Characteristics apply to both heatsinked and non-heatsinked devices.

STATIC CHARACTERISTICS
Min.

Collector Cutoff Current

(Vcb=25V)

ICBO
IcBO

(Vcb = 25V, Ta = 100"C)

Emitter Cutoff Current

(V KB

5V)

Max.
100
15

nA

TO-92

A
SYMBOL

10

mA

Forward Current Transfer Ratio

(Ic = 2mA,V, E = 2V)

Breakdown Voltage
10 mA)
10 M A)
(Ir
Emitter-Base Breakdown Voltage
10 M A)
(Ik
Collector Saturation Voltage
500 mA, I,. = 50 mA)
(Ir.
Base Saturation Voltage
(Ic = 500 mA, Ib - 50 mA)
Base-Emitter Voltage
500

160

h KK

100

200

h FK

ViBlOCKS

* v, IKB

<

300jUs

.4

tf>b2

.4

C
e

20
25

60
70
5

Hi SAT)

Vbk
Duty cycle

5 2%

VB

* V

*b

ei

* VcB.SAT,

mA, Vck = 2V)

Pulse width

60

* V
(BIOCEO

=
=

(Io

hp F

*h,. E

Collector-Emitter

*Pulse Conditions:

GES5820, GES5821
GES5822, GES5823
(Ir = 500 mA, V,- K = 2V)
GES5820, GES5821
GES5822, GES5823
(Ir

MILLIMETERS
MIN.
MAX.
6.6 8

.60

.4

8 2 .0

12.70

Li

6.350

3.96

<>i

2.

r|

0.75

3 3

21

1.270

1363

REF.

REF.
|3.9 6

Volts

NOTES:
(THREE LEADS) b2 APPLIES BETWEEN

Volts

1.1

Volts

1223

.40
6 .02
16 .01 9
1

.5

.050

.2 50

.145
5 6 REF.
.18 7 R EF.
M 56

Li AND L2. b APPLIES

BETWEEN L2S ,5"(I2.70MM) FROM REFERENCE PLANE.
DIAMETER IS UNCONTROLLED IN L, AND BEYOND. 5"(I2.70MM)
FROM REFERENCE PLANE.
2.M0UNTING HOLE IS FOR #4 SCREW. HOLE WILL ACCEPT A
.113"(2.87MM) DIAMETER PIN INSERTED PERPENDICULAR
TO THE MOUNTING SURFACE.
I.

1.2

.0

- .5 2
13.2 00
2.420 2.660 .095 .105
I.I 5
1.39 5 .045 .0 55
3.550
40
1.570 REF. .0 6 2 REF

L2

Volts

.5

.1

Volts
Volts

10.1

7
7

INCHES
lnTrP
MAX.
.263

MIN.

GES5820, 21
GES5822, 23
DYNAMIC CHARACTERISTICS
(Vcb

MHz)
Common Base
f = 1 MHz)

10V, f

Max.

Min.

Collector-Base Capacitance
1

15

pF

55

pF

Input Capacitance,

(Veb = 0.5V,
Gain Bandwidth Product
(Ic = 50 mA, Vce = 2V, f

= 20 MHz)

GES5820, GES5821
GES5822, GES5823

MHz
MHz

100
120

fx

Typical h K vs. c
I

0ESS
I

U-

2 50

r-

IE

-12 5'C

200

<

150
12 i*C

l^s

o
a
<

23*C

"""
"

25 'C

u-

-V

'^50

I-- COLLECTOR

CURRENT

>

Figure

350

GESB823
6E!35822

I25 B

>
>

250

^ ^-

C-

*"l2!

^
>

k\

a:

25*C

u.

>

\
I c -COLLECTOR CURRENT-

mA

Figure 2

1224

GES5820, 21
GES5822, 23

Typical
Ob

K
8

V CE |sat)

vs.

lc/20)

2
S

GES582I

10

/>

GES5820

'>

GESB823
GESS822

tf~

l>

< ^
"*,

~}-~-^ "-T"

'A
'25-C

*
*'

r*^

*s

fr*

\f'''

c~

z ~\

__

2S"C-

.**^-

I25"C

IC-COLLECTDR CURRENT- mA
I C -C0LLECT0R

Figure 3

CURRENT- mA

Figure 4

Typical
(l 8

_J

'

/'"'

^*

V CE [sat]

vs.

lc/10)

lu

>
L

-GES5823
GES5822

GES582I

- 6ES5820

ii

,'<

//

I25'C

<

' lfc>
<>

*-""'

25'C

--

.i fc

.-

*'

s
*

__

K
I2S*C^

25*C

25'C

'

iS c"^"

25'C-

"

A/'

i*C

',

-<d ;J-'
C-T".

25 c

S
r.-

COLLECTOR CURRENT- mA

!<;

-COLLECTOR CURRENT -mA

Figure 6

Figure 5

i
1225

GES5820,21
GES5822, 23

Typical

V BE vs.

H
4 t.
4

*
i

Sio

GES5822

- GES582I -

GEJ suz

J
*

25 C

* 6 =^-=
"" "

*~

zzz

"

*^>
"

"A

r:
25C
I25C _. " -

m ~~.

^z

25 C

b-.
__

**

^y

-j

mm

- 2!

100

10

-COLLECTOR CURRENT-mA
100

10

I -

COLLECTOR CURRENT-mA

Figure 8
Figure 7

power vs ambient temperature derating

1000

900
Typical Icbo vs. Ambient Temperature

800
CASE TEMPERATURE
<DERATING WITH
[heat SINK

700

25V

VC B

600

=?

10

/free AIR DER ATING

r-iWITH HEAT S NK

s
E

/.

1.0

r\

500

-A /

400

y*i

300

//
//
/

FREE AIR DERtmNGl/*

NO HE AT SINK

200

=A

0.1

0.8
0.S

y
//

100

fi

25

.01

20
40
60
80
TA AMBIENT TEMPERATURE-"C

100

120

50

75

100

125

AMBIENT OPERATING TEMPERATURE - C

Figure 9

Figure 10
1226

150

Silicon

GES5824
GES5825
GES5826

Transistors

..

'

are intended to satisfy a broad range

of general purpose signal level applications at audio and intermediate frequencies.

These

particularly de-

microampere

signed for operation in the 10

to 20 milliampere range.
2:1
gain ratio per group.

Low Collector Saturation Voltage

Epoxy Encapsulation with Proved
ity

DC

maximum

ratings:

Reliabil-

(25C) (unless

85% RH.

TO-92

therwise specified)

MILLIMETERS
MIN.
MAX.

SYMBOL

Voltages

4.3 2

Base
Collector to Base
Emitter

to

40

Volts

50

Volts
Volts

Current

mA

100

E
e

2 41
I.I

Dissipation

L2

Total Power (Free Air

Total Power (Free Air

Temperature
Storage
Operating
Lead Soldering, Vm"

from case for 10

Derate 3.60

mW/C

@
@

25C)i

P,

300

mW

55C)

P,

260

mW

T,

sees.

to

150C
125C
2fiOC

6.3 5

10

.0

2 2

67

4.32

1.270

2.920
12.030 2.670

.01

NOTES
1.3

75 .20 5
.12 5 .16 5
5
.09 5
.0 4 5 .0 5 5
.1

.1

.13 5 .170

00

.5

- .05

.2 50
.1

.0

80

',5

3
3
2

.10 5

THREE LEADS
(THREE LEADS) <^b2 APPLIES BETWEEN L| AND L 2
^b APPLIES BETWEEN L2 AND 12 70 MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.
.

Min.

MAX.
.2

6
6

(25C) (unless otherwise specified)

Static Characteristics

Collector Current,
V,-,. = 40 Volts
V.-f
40 Volts, Ta

Jl

THIS SIDE.
3.

increase in ambient temperature above 25C.

electrical characteristics:

3.4 3

MIN.
.17

AD

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

to

V.a"

max.

5200

50 1.395

12.700

EMITTER
BASE
COLLECTOR

INCHES

A
E
I.

.0

-o 2

NOTES:
I.

-65
-65

TsT,

*b

4 8 2

180 4 190

"1

L|

5 3 3
.5 5

44 5
3

Collector (Continuous)

40

^b2

*0

.4

f>b

Vr
V
Vr

2.

Collector to Emitter

U_ Y* b2

Lt

SEATING PLANE

excellent characteristic stability under

environmental stresses, 85C

absolute

0A

-<J3

L,

Excellent Gain Linearity

Features:

silicon, planar, passivated, epitaxial transistors

Units

Typ.

100C

nA

50
10

50

nA

Emitter Cutoff Current,

V,: = 5 Volts
Collector-Emitter Breakdown Voltage,
Ir = 10 mA
Collector Saturation Voltage
(Ir

10

mA,

Volts

40

1 mA)

I,.

125

Volts

.78

Volts

.9

Volts

Base-Emitter Saturation Voltage

(Ir

10mA,

= 1 mA)

Base-Emitter Voltage
(Ir = 2 mA, Vck = 10V)
Forward Current Transfer Ratio
(I,- = 2 mA, V,, = 5V)
:

GES5824
GES5825
GES5826

h,-,;

h,,

150
200
300

60
100
150

h,-,.

Dynamic Characteristics
Gain Bandwidth Product
(Ir

mA,

V,-k

10V,

10

MHz)

90

250

60

225
300
450

MHz

Forward Current Transfer Ratio

(Ir

mA, Vck

5V,

KHz)

GES5824
GES5825
GES582G

100
150

Collector-Base Capacitance
(Vr,: = 10V, f = 1 MHZ)

Base Time Constant

(Vce = 10V, Ic=2mA, f=31.9

Collector

1.9

MHz)

65

r h 'Co

Registered values.

1227

4.0

I
pF

p sec.

GES5824,

26

25,

GAIN BAND-WIDTH
PRODUCT

FORWARD CURRENT
TRANSFER RATIO

vs.

vs.

COLLECTOR CURRENT

COLLECTOR CURRENT

GES5824
O

O 9

GES5824

"

-11

GES582<

"1
~tL~l
-l"-JJU
V itt
vXl'i

1
1

11

l\
-AltA
.-t\_lI.T
-i-

.01

.03

.02

.2

.)

.5

Cf 5V

~4

GES5824

T" lOO'c

T A -Z5-C

nv^
v
%lJ~

--JJ

'

V-5S'C
1

10

COLLECTOR CURRENT -mA

c -

.01

.05

.02

5
Ic

GES5825
~

O M ^

-COLLECTOR CURRENT

.11

GES582 5

TA
vCE

sv

GES582e

M \1 /
i

.05

12

111
.5

.2

.1

ll
v\\

COLLECTOR CURRENT

\1
^1 y
5

u
II,

'

/
u

30

10

mA

TTTT

UJ

T- 2S*C

^5

tf
tf

'

--

ft.

.02

.02

.09

GES5826
O
*

II

g8

III

GES58i26

Mil

5 VOLTS

//

GES58Z6

T
t

.*">

H /
1

I
1

\ \

.05

.8

.1

.5

k
1

O
I

1.

COLLECTOR CURRENT

\\ \

tt

'/
S

10

\N

L
\

250

100

mA

GES5826

8 S

(1

90

20

-COLLECTOR CURRENT-

100* C

Tf
-'

.01

Z4

100

g 8

10

>

O
O

30

20

10

GES5825

ll

\'^

\\i-

_]_

~~~T fc

r
1

30

mA

.a?
Ic -

1228

COLLECTOR

CURRENT

mA

GES5824, 25, 26

TYPICAL ELECTRICAL CHARACTERISTICS

Capacitance
vs.

vs.

IcBO
VS.

TEMPERATURE

VOLTAGE

TEMPERATURE

V__ - VOLTAGE EM ITTCT TO BASE - VOLTS

2.0

vr ^- 5V

1.75

Ic

1.5

2mA

Hn
2

s
S

1.4
1.3

L2

a.

GES5825

i.

GES58Zff

fc

I.I

a.

1.0
Hi

?*

12*

2
.?

-60

-40

40

20

-20
-

Ta

60

80

100

120

*b

140

-60

V0LTA6E COLLECTOR TO BASE-VOLTS

-25

53

fiS

T.- tMBIENT TEMPtRATUflt

*C

AMBIENT TEMPERATURE-^:

CE(SAT)

v,, EISAT)<

'BE(DRIVE)

VS.

VS.

Collector Current

Collector Current

/
,''

Vf

<

"y

S
JJ

'"

S''

'

'

'b

"

M-r-r--

.100

UJ

O
-

"'"'

^>

GES385 9A

t
1

J
;

'

/
i\- "l VOLT

G ES5825-^'

Cb" 'x,\zf^

COLLECTOR

CURRENT

mA

COLLECTOR CURRENT-mA

TYPICAL SMALL SIGNAL CHARACTERISTICS

f=l KHz, V rE =10V, c = 2mA, T A = 25C
l

Symbol

GES5824 GES5825 GES5826

Characteristics

1680

Input Resistance

Output Conductance
Forward Current Transfer Ratio
Voltage Feedback Ratio

hrt-

PARAMETERS
1

2.8

PARAMETERS

vs.

Units

ohms

3660

8.2

11

17

110

175

275

8.2

10.5

14.6

TEMPERATURE

/xmhos

xio- 6
h

PARAMETERS

GES5824

24

GES5825

GES5826

r-

f*.

's.

t"
^
K s\'" t
"\S

f-

ho

1.6
1

-i

a
o

'*

iZ
,

0.9

\
hr.\

h (<

h i, h rt

\
^.
a

h|,

6ES5824

h f

n/

?-'-'

W*n

COLLECTOR

15

20

VOLTAGE - VOLTS

~ivi:
-....
82

i_I

10
-

:.

GES5 824

9
VCE

...
hoe.,-'

--.

h (.

/,

a.

"i^/

'-.y?

o' U
S

vs.

Z6

<

Vce

vt.

2480

2!
T -

AMBIENT TE*tPEATURE

1229

'C

GES5824,

25,

TYPICAL

26

COMMON

EMITTER

//

//

PARAMETERS

V OE = 10V
l

= 2mA
y,e

Output Admittance

Reverse
Transfer Admittance

Input Admittance

vs.

vs.

vs.

Frequency
(INPUT SHORT CIRCUIT)

Frequency
(OUTPUT SHORT CIRCUIT)

Frequency
(INPUT SHORT CIRCUIT)

100

"l.
E

50

/'

_b ro

"oe

%
a

_/.

=1

"i.

.5

io

3.

.2

z
A

t-

*-

-g

>
? .05
?

.01
.5
f

FREQUENCY- MHz
f

FREQUENCY

MHz

FREQUENCY -MHz

Yf.

Forward Transfer
Admittance
vs.

Power

Frequency
(OUTPUT SHORT CIRCUIT)

vs.

Ambient Temp. Derating

f.

.5
'

FREQUENCY

MHz

25

50

75

100

AMBIENT OPERATING TEMPERATURE

1230

125
-

GES5824, 25, 26

COLLECTOR

TYPICAL

V
f

= 250

CHARACTERISTICS

KHz

GES5824

y%/.
Input Admittance

Output Admittance

vs.

vs.

y '&/\

Collector Current

Collector Current

(OUTPUT SHORT CIRCUIT)

(INPUT SHORT CIRCUIT)

y ,y y
^ "^jy

on

g*

a.

VCE
5V

2000
;

'

j*

iov
15V
5V

1000

^ $\

"

500

">

si
15V

__

T~-

JAX

;, isv

20 40 60 80 100

<+ <;,

200

100

< 's

'

(
1*

'-'

VCE - VOLTS

\y

->>

50

*~l

GES5825

II

10

20

-Y
w

t*

12

10
.2

.5

COLLECTOR CURRENT

Hi
a:
tz

/rft/

(r

10
-

I.

t-

^/

COLLECTOR CURRENT -mA

mA

o
H 4

$/

S /

UJ

o
o

J"

5^-

^1
Yfe

Reverse

Forward Transfer
Admittance

20 40 60 80 100

Transfer Admittance

VCE -VOLTS

vs.

vs.

Collector Current

Collector Current

(OUTPUT SHORT CIRCUIT)

(INPUT SHORT CIRCUIT)

GES5826
II

20
400

10
'..

10

~b

"

re

CE

Sr\

19

\\

i-

z
^

r-

r-

f ,**

o
<
-b

i.

Ltl

5
oc
(~

-g

re

LESS THAN

0.1

o:

o
4
5
in

3"

' *

|imho

'
UJ

iC

or

UJ

f
y

.1

.4

.e.8

I.

6 BIO

0 100

20

COLLECTOR CURRENT

mA

^z

.2

.5

I- -

COLLECTOR CURRENT

1231

5
-

10

mA

20

/ //>
/
rX
^ /y

5/

b/
J

20 40 60 80 100
VCE -VOLTS

Silicon

Transistor

These silicon, planar, passivated, epitaxial transistors are intended to satisfy a broad range
of general purpose signal level applications at audio and intermediate frequencies.
Features:

Excellent Gain Linearity particularly

designed for operation in the 10

Low

microampere
2:1

to 20 milliampere range.
gain ratio per group.

DC

Collector Saturation Voltage

Epoxy Encapsulation with Proved

Reliability
excellent characteristic
stability under environmental stresses,

85C85% RH.

absolute

maximum

ratings:

(25C) (unless otherwise specified)

Voltages
"'Collector to Emitter
"'Emitter to Base
""Collector to Base

Vceo

40

V KB o
V CBO

5
50

Volts
Volts
Volts

100

mA

360
260

mW
mW

Current
* Collector

(continuous)

Dissipation

NOTE 1LEAD DIAMETER IS CONTROLLED IN THE ZONE BETWEEN

.050 AND 250 FROM THE
SEATING PLANE BETWEEN
250 AND END OF LEAD A
MAX. OF 02I IS HELD.

ALL DIMEN IN INCHES

AND ARE REFERENCE
UNLESS TOLERANCED.
T0-I8 LEAD SPACING

Power (Free Air

Total Power (Free Air

"'Total

Temperature
* Storage
"Operating
*Lead soldering, Mo"

@ 25C)
@ 55C)

<I)

Pr
Pt

+150
+125
+260

-65 to
-65 to

TsTG

T,

\{i2

"

TL

from

Q-tl-J

C
C
C

case for 10 sees. max.

"'"Derate 3.60

mW/C

increase in ambient temperature above 25C.

electrical characteristics:

(25^C) (unless otherwise specified)

STATIC CHARACTERISTICS
"Collector Current

(V CB

Min.

40V)

(Vob = 40V, T A = 100C)

"Emitter Cutoff Current (Veb

5 Volts)

Typ.

Max.

Units

IcBO
JCBO

50
10

nA

Ibbo

50

nA

mA

"Collector-Emitter Breakdown Voltage

(Ic
10 mA)

V (BR)CEO

"Collector Saturation Voltage

(Ic
10 mA, I,
1 mA)

Vce

<sat)

125

Volts

Vbe

SAT)

.78

Volts

.5

.9

Volts

250

500

90

350

250

750

40

Volts

Base-Emitter Saturation Voltage

(Io

= 10mA, I B = 1mA)

*Base-Emitter Voltage
(Io = 2 mA, Vce = 10 V)
"Forward Current Transfer Ratio
(Ic = 2 mA, Vc E = 5V)

V be
h rE

DYNAMIC CHARACTERISTICS
Gain Bandwidth Product
(Ic

= 2 mA, V CE =

10V, f

10

MHz)

fT

"Forward Current Transfer Ratio

(Ic

= 2 mA, V CE =

5V, f

= 1 KHz)

h fe

MHz

""Collector-Base Capacitance

(V CB

10V,f

MHz)

""indicates

1.9

4.0

PF

Base Time Constant

(Vce = 10V, Ic=2mA, f=31.9

Collector

Ccb

JEDEC

MHz)

Tb'Cc

registered values.

1232

65

sec.

hpE vs.

Capacitance vs. Voltage

V -VOLTAGE EMITTER TO BASE- VOLTS

2.0

17 b

1.5

u.

UJ
(J

GES5827

Ambient Temperature

V. _=

5V

Ic

2m A

CE

**

1.4

1.3
l.<J

It
<

I.I

1.0

<

.9

a:

.8

|4
UJ
-I
-i

o
i

.6
2

.6

25
20
-VOLTAGE COLLECTOR TO BASE-VOLTS
15

\L60

-40

-20

Ambient Temperature

Icbo vs.

20
Ta

40

60

80

100

140

120

AMBIENT TEMPERATURE-C

1000 r

vs. Collector

Forward Current Transfer Ratio

Current

VCB= 4 ov

0.1

0.01

100
40
60
SO
Ta- AMBIENT TEMPERATURE-'C

120

Normalized h Parameters

vs.

20

100

10

Ic

- COLLECTOR CURRENT- m A

Power vs. Ambient Temperature Derating

Ic

I
25 i

Hi
03 04

0.5

07 09

0.6

I,

0.8

1.0

30 40 3JO

70

6.0

910
8X> 10.

50

75

100

AMBIENT OPERATING TEMPERATURE

COLLECTOR CURRENT-mA

1233

125
-

Silicon

Transistor

These silicon, planar, passivated, epitaxial transistors are intended to satisfy a broad range
of general purpose signal level applications at audio and intermediate
frequencies.
Features:
Excellent Gain Linearity
particularly
designed for operation in the 10
microampere to 20 milliampere range.
2:1 DC gain ratio per group.

Low

Epoxy Encapsulation with Proved

Collector Saturation Voltage

Reliability
excellent characteristic
stability under environmental stresses,

85C 85% RH.

absolute

maximum

ratings:

(25C) (unless otherwise specified)

EMSTTER

TO-92

Voltages
Collector to Emitter
Emitter to Base
Collector to Base

VCEO

40

Vebo
VcBO

SYMBOL

Volts
Volts
Volts

50

A
<b

$D

Collector (continuous)

mA

100

2.41
I.I

L2

Storage
Operating

Lead soldering, \'U \" y32 " from

case for 10 sees. max.
"Derate 3.60

-65 to +150
-65 to +125

TsTG

mW/C

C
C

TTOJ7210

.5
.4

61-0Z2

.0

8 2

.01610(9

1.3

520

.1

7 5 |.205

-1

2 5:-l 65i

4.1

2.67
.0951 05|
1.39 5 .0451.0551
.1

1.270

6.3 5

2.0 3

NOTES

.13 5
.5

.1

70!

00

- .05

.2 50
.1

2.670 .080

1.3

3
3
2

.10 5

NOTES:
1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSID

THIS SIDE.
3.CTHREE LEADS)^.b2 APPLIES BETWEEN L AND L2.
#b APPLIES BETWEEN L2 AND 12.70 MM (.50(
FROM THE SEATING PLANE. DIAMETER IS UN
CONTROLLED IN L, AND BEYOND 12 70 MM C.5

+260

T,.

JMN, MAX.

2.920

Q
s

MAX.

4.320
12.700

Li

Temperature

50

COLLECTOR

INCHES

3.4 3

mW
mW

360
260

80

3.1

Pt
Px

71

Dissipation

@ 25C) 0>
@ 55C)

.4

E
1

Total Power (Free Air

Total Power (Free Air

.4

4.4 5

BASE

3.

5.3 3

MIN.
4.3 2

-Jbz

Current

MILLIMETERS

increase in ambient temperature above 25C.

FROM SEATING

PLANE.

electrical characteristics: (25^C)(ume SS otherwise specified)

STATIC CHARACTERISTICS

Min.

= 40 Volts)
=
= 100C)
Emitter Cutoff Current (V EB = 5 Volts)
Collector Current (V CB
(V CB
40 Volts, T A

Typ.

Max.

Units

nA

IcBO

50
10

Ikbo

50

nA

IcBO

mA

Collector-Emitter Breakdown Voltage

(Io = 10 mA)

v (ER)C

Collector Saturation Voltage

(Ic
10 mA, I B
1mA)

VcE(S,'

.125

Volt

VbE(S^

.78

Volt

.5

.9

Volt

400

800

Min.

Max.

Units

90

350

MH

400

1200

40

Volt

Base-Emitter Saturation Voltage

(Ic

10

mA,

I,

= 1 mA)

Base-Emitter Voltage
(Io = 2 mA, V CE = 10V)
Forward Current Transfer Ratio
(Ic = 2 mA, Vce = 5V)

DYNAMIC CHARACTERISTICS
Gain Bandwidth Product
(Io = 2 mA, Vce = 10V, f = 10 MHz)
Forward Current Transfer Ratio
(Ic = 2 mA, Vce = 5V, f = 1 KHz)
Collector-Base Capacitance

(V OB

= 10V,f =1 MHz)

Collector

fx

h
Cc

1.9

r'Cc

65

4.0

dF

Base Time Constant

(Vce=10V,

Ic

=2mA,

f=31.9

MHz)

1234

Psei

GES5828
Capacitance

vs.

Voltage
h FE vs.

Ambient Temperature

-VOLTAGE EMITTER TO BASE- VOLTS

4

2-0

17b

V-

Ct
Ic

5V

2mA

"" 1
/"

,b

20

-20
Ta

Icbo vs.

40

60

80

100

120

140

AMBIENT TEMPERATURE-C

Ambient Temperature

VCB .40V

-y-

-55

-25

35

Forward Current Transfer Ratio

MM!
VCE

5.0V

Tj.100 c

vs. Collector

95

65

TA - AMBIENT TEMPERATURE

"

125

'C

Power

Current

vs.

Ambient Temperature Derating

>
If

TA *25*C
[

600

\\

Hi

HV

25

50

75

100

AMBIENT OPERATING TEMPERATURE

I c -COLLECTOR

CURRENT-mA

1235

I2f

- C

Silicon

Transistors

GES6000
GES6002

The General Electric GES6000 and GES6002 units are silicon

planar passivated,
epitaxial devices designed primarily for high speed switching, low noise amplifier and
core driver applications. Complementary
versions of these units are available and
are designated as GES6001 and GES6003 respectively

NPN

PNP

Features

Epoxy encapsulation -with proved reliability.

Performance comparable to hermetic units

Low

VcECSAT)
Characterized for Industrial Service.*
Noise Figure.

excellent characteristic stability under environmental stresses 85C 85% Relative Humidity.

maximum

absolute

r-Qa-

(T A

TO-92

GES6002

SYMBOL
A

Collector to Emitter
Collector to Emitter

VcEO

Emitter to Base
Collector to Base

Vbbo
VcBO

25
35
5
35

VCES

25
35

*b

Volts
Volts
Volts
Volts

35

2%

800

Ic

800

25C)
25C)
(Tc g 25 C)
(T A & 25C)

Total Power (Tc

Total Power (T 4

Pt
Pt

.800
.400
8.0
4.0

Watts
Watts

.800
.400

mW/C
mW/C

8.0
4.0

Temperature

Lead (% 6 "

Ma" from

fii;

T,

tn

-65 to

ii

+260

Collector-Emitter

12.700

Ll

L2

6.3 5

.09 5

105

,045j

055

.170

.1

.5

1.270

2.920

2.0 3

2.670

.2
.1

.0

51

00
-

3
2

50
1

80

.10 5

1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTS

THIS SIDE.
3.

>

(THREE LEADS) ^b2 APPLIES BETWEEN L) AND L

*b APPLIES BETWEEN L2 AND 12.70 MM (.!
FROM THE SEATING PLANE. DIAMETER IS
CONTROLLED IN L. AND BEYOND 12. 70 MM
FROM SEATING PLANE.

(T A

25C, unless otherwise specified)

Symbol

Min.

GES6002

Max.

Min.

Max.

Breakdown Voltage

V (BR)CEO

25

25

Volts

Emitter-Base Breakdown Voltage

(I E
100 M A, Ic
0)

V (BB)EBO

Volts

Collector-Base Breakdown Voltage

(Ic
lOO^A, I K
0)

V(BR)CBO

35

35

Volts

V (BR)CES

35

35

Volts

(Ic

10mA,

IB

Collector-Emitter

(Ic

0)t

Breakdown Voltage

100M-, Vbe

0)

Collector-Emitter Saturation Voltage

(Ic

100mA,

Ib

10mA) t

.200

VcE(SAT)

.200

Volts

Base-Emitter Saturation Voltage

(Ic =

100mA,

IB

10mA) t

V BE(SAT)

.70

.95

.70

.95

Volts

Vbe

.55

.78

.55

.78

Volts

h ra

40
100
80

300

80
200
150

500

Base-Emitter Voltage

= 5V, I c = 10mA)t
(Vce = IV, Ic = 100mA)
(Vce = 1V, I c = 10mA)t
(Vce = 1V, Ic = 100mA )t
(Vce

Forward Current Transfer Ratio

hpE
iIfe

Collector Cutoff Current

(Vcb
(Vcb

= 25V, ! = 0)
= 25V, Ie = 0, T A = 100C)

Emitter-Base Reverse Current

(Veb
3.0V, Ic
0)

t Pulsed, 300Msec,

=
g 2%

1.3

.05

NOTES:

GES6000
STATIC CHARACTERISTICS

4.32

case for 10 sec.)

electrical characteristics:

Kfl

+125

1.1

3.4 3

Dissipation

2 670
50 1.395

2 41

e1

mA
mA

500

INCHES
NOTES
MIN MAX
4 32
5.3 3
.17
.210
.4
7
55
.0
6 .0 2? 1.3
40 7 .4 8 2 .0 6 .01 9 3
4.4 5
5.20
75 .205
3 180 4 190 .125 .16 5

MAX

MIN.

4,0
e

500

Ic

MILLIMETERS

*t>2

Current

Collector
Collector (peak, pulsed 10 ^sec,
duty cycle)

I.

2.

25C, unless otherwise specified)

Voltages

Storage
Operating

EMITTER
BASE
3 COLLECTOR

SEATING PLANE

ratings:

GES6000

Derate Factor
Derate Factor

|JSUb2vUb

L,

Low

10
10

10

nA

IcBO

10

mA.

Ieb

20

20

nA

IcBC

duty cycle

1236

GES6000, 02
DYNAMIC CHARACTERISTICS

GES6000
Min.

GES6002
Max.

Min.

450

130

13

2.5

50

Typ.

Typ.

Max.

Forward Current Transfer Ratio

(Ib=

10V, f

lKHz)

h, e

60

V CE =

10V, f

lKHz)

h,

1.2

10V, f

lKHz)

10

10V, f

lKHz)

h re

Ccb

3.9

6.0

3.9

6.0

pF

Ceb

15

20

13

18

pF

250

500

260

560

1mA, Voe

Input Impedance
(I E
1mA,

750
9

20

Kohms

15

70

umhos

Output Conductance
(I E

1mA, Vce

Voltage Feedback Ratio

1mA, Voe

(Ie=

Collector-Base Capacitance
10V, I E
(Vcb
0, f

= 1 MHz)

Emitter-Base Capacitance
0.5V, Ic
(Veb
0, f

= 1 MHz)

xlO- 4

20

Gain-Bandwidth Product

(Vce

10V,

Ie

= -10mA, f =

MHz)

100

125

fT

140

MHz

Noise Figure

= 5V, I E = 100^A, BW =
= 10 Hz to 10 KHz)

(Vce
f

See Figure 1
30V, Io(on) = 150mA,
Time See Figure
(Vce = 30V, Io(on) = 150mA,
Storage Time See Figure 2
(on) = 150mA,
(Vce 30V,
Time See Figure 2

15.7KHz,

R s = 5K

NF

dB

Delay Time

(Vce

I B1

15mA,

V BE (off) =

0V)

nsec

I B,

15mA,

V BE (off) =

0V)

tr

12

12

nsec

I B1

15mA,

I B2

15mA)

t.

170

200

nsec

I Bi

15mA,

I B2

15mA)

t,

35

50

nsec

Rise

Ic

Fall

(Vce

30V,

Ic

(on)

150mA,

DUTY CYCLE

2%

TO OSCILLOSCOPE
t r

Ins

R,>IOOK OHMS

> 200ns

P.W.

TO OSCILLOSCOPE

tr
R| ->

Ins

IOOK OHMS
V<x30V

V CC =30V

FIGURE

DELAY

1.

AND

inn

ii

6E 56 ooc

TOTAL SHUNT CAPACITANCE FIXTURE, CONNECTORS AND PROBE" lOpF

2.

STORAGE AND FALL TIME EQUIVALENT CIRCUIT

'

'^

FIGURE

EQUIVALENT CIRCUIT

RISE TIME

fil
I

Cs

lTT TT
\

S"

II

C3?

S-

'>

***'

.(

mml

Tr 1

--f

.35<

\1

1
ill

III

BETA VS. COLLECTOR CURRENT

J-LLLU,

IC-COLLECTo*

BETA VS. COLLECTOR CURRENT

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. COLLECTOR

CURRENT

1237

CUMCNT-al

imi

GES6000,02

nun

GES6000

211

If
II
s

.wie

ic

ii:

r
-I

"
TJ.l-flft* C

if.

*" *

s;'

*rff4

HI
a
i

ii

III

,i

BASE-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

VS.

GES6000GES6002
1

I C - COLLECTOR

p
w

'

ic

III

mA

Vcc-9.0 VOLTS
|

3ES600 I

-0

CURRENT

20i e

-TTTrrff

.:
;

Tfcl32rr
-

H
^

?
' ^ijVi,

/5

>
i

.10

TRANSCONDUCTANCE

H Uo

ta

I25*C

lil^S

''Z^^

"-

.01

1.0

COLLECTOR

VS.

CURRENT

<^>-

10

100

1000

COLLECTOR CURRENT - mA

- GES6000
GES6002
S ATI C .|Q*

VS.

h!

5 sk to"*

COLLECTOR-EMITTER SATURATION

VOLTAGE

j/

III

Ijjjj"

COLLECTOR CURRENT
Ii

HILi ife

jl

-41

\^.o..

\m

l'

\\w"

-m-

*>.

\f

"--i
Hill

J ,\^~\~-

Jc-tOmA

I B -BASE

COLLECTOR-EMITTER SATURATION
VOLTAGE VS. BASE CURRENT

III

It

"tit

11

-41

,!),,.

\
CURRENT -

1000

M:

VS.

5100

GES6002

_l
~1

L^

>

-,100

GES6000

==s

rtill

COLLECTOR-EMITTER SATURATION
VOLTAGE VS. BASE CURRENT

Vct .|OVCX.TS

TEMPERATURE COEFFICIENTS VS.

COLLECTOR CURRENT

S>^

COLLECTOR BASE TIME CONSTANT

EMITTER CURRENT

SES&uyu

\\\

COLLECTOR-BASE TIME CONSTANT VS.

EMITTER CURRENT

j3^

II

ffi^^ St

44

-41
^

JL

II

TJ

10^

iEseoo-?~^

<

to

IU

<

=GES6000 =

g
,0

GES6C)02

= al

---="5

^tTr^s

GESSon?"

^y

s- GES60<X) =

-fft^V

r-~

""

-^

II

II
1

GAINBANDWIDTH PRODUCT
EMITTER CURRENT

VS.

GAINBANDWIDTH PRODUCT
EMITTER CURRENT

1238

VS.

^C-"^ IStf}** "

VOLT.0E-VOLT3

COLLECTOR-BASE & EMITTER-BASE

CAPACITANCE VS. REVERSE BIAS

VOLTAGE

GES6000, 02
\

1
.

"vee

'l\
\i

BW-

E JIVN.ENT

IS

/\

GES6002

I.

'

7K

<xijr

'

's

EOUENCr-l-JOM! TO

BES6000

\\

*CE

FREQUEHCt-t-JOHl TO tOt Hi
E0UIVW.ENTBW-I5 7KH.

l.<

m*

O0>l

!,'i
1

"i

L.

iLJ

1|

*>^1

OK

IOK

SOURCE RESISTANCE- OHMS

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

SES<50CK

r^>

^'^1

E-GES6002S
L-JJ-Ui

fj?>
"

*^i-

2*t

Jill

/l

n[\\\\\

yVA

-P^*

9V,

//

j^t-

-*"

1"

v CE

~r

/
?
.-

7*^~>H_

1,..
,

y y

_y

'Offfl

II

COLLECTOR CHARACTERISTICS
&

COLLECTOR CURRENT

VS.

&

VS.

COLLECTOR CURRENT

GES6000ES6002

Ari
sT*>.

II

iZ

OES6005

30

v C E- av

j?

Tfl .zs-c

>

/
>

J?

S
^
o

\S/

*"*

"
'

^1
^
^5k

<

-+-

'T
1

yVL

.*'

'

j^

'

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. AMBIENT
TEMPERATURE

SOURCE RESISTANCE

SOURCE RESISTANCE (OHMSI

{OHitS)

NOISE FIGURE VS. SOURCE RESISTANCE

NOISE FIGURE VS. SOURCE RESISTANCE

6ES60on.fiFSfino2=^
VCB -2

+^+~

GES60 00

T
T

vCE-5V. IA art

G *S600Z
v

SV, TA .Z<C

*"

""

_[_

*\

T
T
T
PT

V*
j
*&

p\
C

"

V
\*.

\\

V
'

:^

fv

v>

'+.

\i

K\

^L

'

Jfr-^L^

I..
!

5 = 44=;-+=*- =

N^5

fa

":

**.

III
L-.

V
\
^04~l

'

WO

5^g

T*- AMBIENT

TEI*PEWlTU*ie -

COLLECTOR-BASE CUTOFF CURRENT

AMBIENT TEMPERATURE

VS.

NOISE FIGURE VS. FREQUENCY

T239

NOISE FIGURE VS. FREQUENCY

Silicon

Transistors

GES6001

GES6003

The General

Electric GES6001 and GES6003 units are silicon

planar passivated
epitaxial devices developed primarily for high speed switching and general purpose
amplifier applications where ultra low noise characteristics are desirable. Complementary
versions of these types are available and are designated as GES6000 and
GES6002 respectively.

PNP

NPN

L-TO

Features

Epoxy encapsulation with proved

Performance comparable to hermetic units

excellent characteristic stability under environmental stresses
85C
85% Relative Humidity.

reliability

Voltage and Current Values for

PNP

are negative

maximum

absolute

Low Vce

Characterized for Industrial Service*

Low

Voltages

to Base
Collector to Base

-l

Noise Figure.

25
35

V EBO

Volts
Volts
Volts
Volts

V CRO

35

Ic

500

500

Ic

800

800

320
40 7

35

"

*<>2

40
4 4

"_

t:

e
1

S2%

mA
mA

Dissipation

Total Power (To

Total Power (T A

<
<

Derate Factor (T e
Derate Factor (T A

25C)

Pt
Pt

25 C)

>
&

.800
.400

25C)
25C)

Watts
Watts

.800
.400
8.0
4.0

8.0
4.0

mW/C
mW/'C

Lead (% 6 "

1 ST(J

<

Tj

<

Tl

<

electrical characteristics:

55

48

5200

18

MAX.

.17

210

,0

190

6 022
6 01 9

7 5

Z S
09 5

.1

150
1

oc

->

>

(Ti

+260

I.I

L2

6.3 5

2.0 3

1.270

2.670

.05

.2

50

.1

.0

80

Symbol

1.

IB

Breakdown Voltage
100 M A, Ic
0)
Collector-Base Breakdown Voltage

V(BR)ERO

Emitter-Base
(I B

>

3.

"C
"C

lOO^A,

IE

=
0)

V(BR)CBO

Breakdown Voltage
100 M A, V be
0)

Min.

GES6003
Max.

Min.

25

Max.

25

Volts

Volts

35

35

Volts

35

35

Volts

100mA,

IB

10mA) f

Vc

.400

400 Volts

Base-Emitter Saturation Voltage

100mA,

IB

10mA) f

.75

1.0

.75

1.0

Volts

Base-Emitter Voltage

(Vce

5V,

Ic

10mA) f

Vbi

.55

.80

100mA)

hF E

10mA)t

hFE
hFE

50
100
60

300

.55

.80

Forward Current Transfer Ratio

(Vce
(Vce
(Vce

=
=
=

IV,

Ic

1V,I C
IV,

Ic

=
=
=

Collector Cutoff Current

(Vcr
(Vcb

=
=

3
2

.10 5

(THREE LEADS) *b2 APPLIES BETWEEN L. AND L

2
$b APPLIES BETWEEN L2 AND 12.70 MM (.50
FROM THE SEATING PLANE. DIAMETER IS Ul
CONTROLLED IN L. AND BEYOND 12. 70 MM (I
FROM SEATING PLANE.

Collector-Emitter Saturation Voltage

(Ic

THREE LEADS

Collector-Emitter

(Ic=

1,3

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSII

Breakdown Voltage

10mA,

V(BR)CEO

NOTES:

= 25, unless otherwise specified)

0)t

(Ic

G5
105
1

4IO 2 67
50 '1.395 04 5 .0 5 5
30 4 32 .13 5 170

12.700
.5 00
2

1.3

20 5

3.4

2.920

GES6001

STATIC CHARACTERISTICS
Collector-Emitter

- 65 to
- 65 tn

&" from

case for 10 sec.)

5.3 3

MIN.

THIS SIDE.

Storage
Operating

(Ic

')

Ll

Temperature

(Ic=

INCHES

MAX.

MIN.

25
35

TO -92
MILLIMETERS

SYMBOL

specified)

Current

Collector
Collector (peak, pulsed 10 ^sec,
duty cycle)

EMITTER
2 BASE
3 COLLECTOR
I.

(t a = 25, unless otherwise

GES6001
GES6003

VcEO
VCES

Emitter

(sat)

Observe Proper Bias Polarity.

ratings:

Collector to Emitter
Collector to Emitter

25V, Ie
25V, I K

100mA)

= 0)
= 0, Ta =

100C)

1CBO
IcBO

100

200
110

500

1240

nA

10
10

10
10

mA

20

20

nA

Emitter-Base Reverse Current

(Veb =
3.0V, Ic = 0)
f Pulsed, 300 M sec. g 2% duty cycle

Volts

GES6001, 03
DYNAMIC CHARACTERISTICS

GES6003

GES6001
Min

Forward Current Transfer Ratio

(Ie

1mA, Vck=

10V,f

lKHz)

hfe

75

10V, f

lKHz)

h,.

1.5

f=lKHz)

Max.

Typ.

Min.

Typ.

Ma X.

450

235

17

h oe

45

100

h re

10

Cob

4.5

8.0

4.5

8.0

pF

Ceb

17

25

15

20

pF

340

500

400

560

75C

Input Impedance

(Ie

1mA, Vce

10

25

Kohms

75

150

fimhos

Output Conductance
(Ie

1mA, Vce=

Voltage Feedback Ratio

1mA, Vce
(Ie

10V,

10V, f

lKHz)

XlO-4

20

Collector-Base Capacitance

(Vcb

10V,

IE

Emitter-Base Capacitance
0.5V, Ic
(Veb

Gain-Bandwidth Product

(Vce

10V,

(Vce
f

5V, Ie

10

Hz

to

Ie

Noise Figure

0, f

0, f

(Vcc=

= 1 MHz)

10mA,

100

MHz)

BW = 15.7KHz, R = 5KO,

100/xA,

225

fT

240

lOKHz)

see figure 1
30V, Ic(on)

Delay Time

= 1 MHz)

150mA,

150mA, Im:

Ibi

NF

1.5

MHz
dB

15mA,

V BE (off) =0V)
Rise

see figure

Time

(Vcc=

30V, Io(on)

15mA,

V BE (off) =0V)
Storage Time

see figure 2

(Vcc=
Ib 2
Fall

Time

30V, Ic(on)

= 15mA)

see figure 2

(Vcc=
I B2

30V, Ic(on)

13

13

130

150

25

50

tr

150mA,

150mA,

Ibi

Ibi

15mA,

15mA,

15mA)

tf'<2ns

(1

16V

TO OSCILLOSCOPE

TO OSCILLOSCOPE
<.lns

t r

>

R,

IOOK

trains
R,

2IOOK

200
V C c--30V

RW.>l^iS

VCC =-30V
Cs

FIGURE

1.

DELAY AND

RISE TIME

TOTAL SHUNT CAPACITANCE FIXTURE, CONNECTORS, AND PROBE

FIGURE

EQUIVALENT CIRCUIT

2.

= lOpF

STORAGE AND FALL TIME EQUIVALENT CIRCUIT

III

III

1ES1 IOOI
mil

Y
mill

HU

"1
"ifc^"

ff--

-m~

Jk ilr
Jlll-U

in

[
jjl

::w
axmI

}{-^i

v*

5*
'' isTcl

Ufl
E86003

rt

sft*^^^

h^

II
~~ P*T, V

-.

'
1

Mill!

til

ill
-.

l
I

.11111

>0\

\Y

v^

^
^

**

I -COL LECTOR

BETA VS.

*1

-N

COLLECTOR CURRENT

IZ

oes< 003

~"

v*^_

41^

'Hi
1

I
-J

Mill

EM OOI
xlff

if"" "|}Ff"

H+itr

CURRENT-m4

BETA VS. COLLECTOR CURRENT

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. COLLECTOR

CURRENT

1241

A
1

GES6001,03

_ 8ES6001
OEseoosH
11

"

II!

mi

4^

OEMOOlf

if:

f
IJJL

11
c

="

v.

.*>

iS

,n

"

'*'-

.,

if

jfj

III

'"n

V*

=/i

s.

'

'

SI
HI

Mi\

*" **

Z5*t

BASE-EMITTER SATURATION VOLTAGE

VS.

S-<-

COLLECTOR CURRENT

"'

_
I

Btseooi
flESSooa

itn

(ESI

?o

.,.

in

\\\i

VT^fr

Jj

ii^

-HI

^r

V"

5'C

III

F[

_2j

^di

f"l

TRANSCONDUCTANCE

-:-j-

VS.

COLLECTOR

CURRENT

*"

II

--COLLECTOR CURRENT-IT

MM

V-'aKVoli*

COLLECTOR-EMITTER SATURATION

VOLTAGE

VS.

COLLECTOR CURRENT

"

OEseooi
^ qemoos

EIU

mi
3
s

-III

i-

mil
In

\i

,1
1

[Mm

III

"

v '

tntl

EMinER -BASE TIME CONSTANT

EMITTER CURRENT

f*-

-5*is

jljl

.4:

ll

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

_L

TEMPERATURE COEFFICIENTS
COLLECTOR CURRENT

J
VS.

100

at

CB'

COLLECTOR BASE TIME CURRENT VS.

EMITTER CURRENT

Eseobi
56

fu

111

VOLTAGE

VS.

111

vJJ
'III

COLLECTOR-EMITTER SATURATION
VOLTAGE VS. BASE CURRENT

\j

i^J

Ea

ev

!iL

,M
\+n

',

ill

tt

TfJ

-Cm

if

Mm

,i\

Ml

III

fir

II
It

Ttj

'

lit

t~

.,

EB*003LU1

\\

s
%

ijii

ov
5,-,

3E 8600

ll

E" EMITTER

:u

IE

NT

==

"

10

12

-s 77

14

16

18

*e UUj

20 22

IE-EMITTER CURRENT-mA

VC E
_^iov

24

26

28

tE

'iff

SB 5

30

=Sr
-5V

KX)

z <<,'-

I
1

60

I E -EMITTER CURRENT- mA

10

REVERSE BIAS VOLTAGE-VOLTS

-EMITTER BASE
I E

GAINBANDWIOTH PRODUCT
EMITTER CURRENT

VS.

EMITTER CURRENT- m

GAINBANDWIDTH PRODUCT
EMITTER CURRENT

1242

VS.

COLLECTOR-BASE & EMITTER-BASE

VS. REVERSE BIAS

CAPACITANCE
VOLTAGE

GES6001.03
II

6ES600

"|

1
i

-8ES

1
!

VZifc

vce~Sv,
EQOIVALE

MUM

FREOUCNC

"<""'

/
:

\|t\

II

/
"*

\f^
\

r"'

\y/'

,6
!

\^/

TTT

'

'
I

\ \

'/

'

Ml

..:

i
1

y,j\

fi"

1'

BesisrAiYCE - a

;e

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE
!

ES6003|
t, jit

SESCOOIe

e$60

ii

/?/
-* Jl

I>^ +/

-^7-

/! /sCv

J?

'.*

^s

ii**/

j-

j.fcfpmjTi

&$

k*
i

B .o

COLLECTOR CHARACTERISTICS

&

VS.

COLLECTOR CURRENT

&

VS.

COLLECTOR CURRENT

GEMOOI
E SCO05

'<0

*
11

\
1

'

"

IL

gEgpnni

/
_.../_

//
/

ik

~^--

A--]

T
S

/
^/

''

'

IEMO0! >-/

2_

T^l*A

'

/
/!_

</
/*

'

IX
i.

s.,

Wr- -x

TEMPERATURE

10

-,'X-

J-XZ..I.

/?

2^\

,-<-

,#__. 4.

:;;:

^^_..

^ Ov

...._

.....
*

"^

*1

ir.r-^.

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. AMBIENT

ZI-4
v -It -X,
-%-/
-t.
7:

/</'

v
A^U

/
'

_...]

,>.

: -'

ktti

"

y/

It'

V
'"

""

**

^aSS

*--*

I'll
H s SOURCE RESISTANCE

(OHMS)

SOURCE RESISTANCE CHMS]

NOISE FIGURE VS. SOURCE RESISTANCE

NOISE FIGURE VS. SOURCE RESISTANCE

8ES600 i.a ESftt503

if

Wl

c
X
"A

MINI

SES6003
\
V

=
=:

ff
>

\
s

"

'<jO n

.,

==

^s

__

- =

WBA

=M

:'** ftj*

rr *ii(n~- H? 22^= ;

mF

FRE0UE*KT-(HI]

T^-iMtlENT TE*IFMATURE-C

COLLECTOR-BASE CUTOFF CURRENT

VS. AMBIENT TEMPERATURE

NOISE FIGURE VS. FREQUENCY

1243

NOISE FIGURE VS. FREQUENCY

Silicon

Transistors

NPN

The General Electric GES6004 and GES6006 units are

silicon, planar passivated,
epitaxial devices specifically developed for higher voltage general purpose amplifier and
switch applications in industrial applications.
versions of these units are available
and are designated GES6005 and GES6007 respectively.

PNP

maximum

absolute

Vceo

Emitter

to

V CES
EBO

Base

Collector to Base

VcBO

ri

2%

(T A

GES6006

40
50

40
50

50

50

Volts
Volts
Volts
Volts

500

500

800

800

43 20
.4

4b2

40

3.1

2.41

L
L2

Pt
Pt

.800
.400

.800
.400

8.0
4.0

8.0
4.0

Watts
Watts

Storage
Operating
Lead (Me"

-TsTG

T,

Via'

from

case for 10 sec.)

Collector-Emitter

IB

0)t

10G>A,

IE

0)

100M, V BE =

0)

10mA)

Base-Emitter Saturation Voltage

(Ic
100mA, I B
10mA) t
Base-Emitter Voltage

2.67
4.3 2

5V,

Ic -

(Vce
(Vce

=
=
=

IV,
IV,
IV,

Ic

Ic
Ic

Win.

GES6006

Max.

Min.

Max.

V<BR)CEO

40

40

Volts

V CBR)EBO

Volts

V (BR)CBO

50

50

Volts

V(BR)CES

50

50

Volts

V CE(SAT)

.200

.200

Volts

.70

.95

Volts

.78

.55

.78

Volts

300

80
200
150

500

V BE(SAT)

.70

.95

10mA) t

Vbe

.55

h FB

40
100
80

Collector Cutoff Current

(Vcb
(Vcb

.1

= 25V, I E = 0)
= 25V, I E = 0, Ta =

lcBO

100C)

Emitter-Base Reverse Current

(V EB
3.0V, Ic
0)

t Pulsed, 300Msec,

=
g 2%

nA

J-CBO

10
10

10
10

f/,A

I EBO

20

20

nA

duty cycle

1244

15

2.670 .080

25C, unless otherwise specified)

hfE

- .05

.2 50

.10 5

THIS SIDE.

= 100mA)
= 10mA)f
= 100mA) f

.500

1.270

Forward Current Transfer Ratio

(V CE

9
.17 5 .205
.12 5 .1 65
.09 5 .105
4_5 J .0 5 5
.13 5 .170

Breakdown Voltage

Collector-Emitter Saturation Voltage

(Ic
100mA, I B
t

(V 0E

5.2

Breakdown Voltage

Collector-Emitter

(Ic

6.3 5

2.0 3

2?

.01

.0

Breakdown Voltage

10mA,

Collector-Base

(T A

Symbol

Emitter-Base Breakdown Voltage

(I E
100 M A, Ic
0)

.0

NC

(THREE LEADS) *b2 APPLIES BETWEEN L AND L 2

b APPLIES BETWEEN Lg AND 12.70 MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

"C
c

GES6004

STATIC CHARACTERISTICS

(Ic

12.700

.0

50 1.395

3.4 3

10

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

1-260

electrical characteristics:

48

MAX.
.2

THREE LEADS

1.

3.

-65 to +150
65 to +125

.5

MIN.
.17

NOTES:

mW/C
mW/C

Temperature

I.I

L|

mA

INCHES

5.3 3

80 4 190

E
e
e1
i

mA

4.4 5

2.920

25C)
25C)
Derate Factor (T c S 25C)
Derate Factor (Ta S 25C)

COLLECTOR

I.

MIN.

A
*b

*D

,usec,

g
g

EMITTER
BASE

MILLIMETERS
MAX.

SYMBOL

25C, unless otherwise specified)

Dissipation

Total Power (To

Total Power (T A

2.

TO-92

Current

Collector
Collector (peak, pulsed 10
duty cycle)

-J.

SEATING PLANE

GES6004

Collector to Emitter
Collector to Emitter

-A

Characterized for Industrial Service.

Low Noise Figure.
40V irrk'eo Maximum voltage rating.

ratings:

Voltages

(Io

-0-

Features

Epoxy encapsulation with proved reliability.

Performance comparable to hermetic units
excellent characteristic stability under environmental stresses 85C85% Relative Humidity.
Low Vce<sat>

GES6004,06
GES6006

GES6004

DYNAMIC CHARACTERISTICS

Min.

Max.

Min.

450

130

13

2.5

50

Typ.

Typ.

Maic.

Forward Current Transfer Ratio

(I E

1mA, Vce

10V, f

]KHz)

h,e

60

10V, f

lKHz)

hi.

1.2

10V,

lKHz)

hoe

10

10V, f

lKHz)

h,

MHz)

Cc

4.2

6.0

4.2

6.0

pF

= 1 MHz)

a,

15

20

14

18

pF

250

500

260

560

750

Input Impedance

1mA, V CE

(Ie=

20

Kohms

15

70

umhos

Output Conductance
(Ie

1mA, Vce

Voltage Feedback Ratio

(I E

1mA, Vce

xlO-'

20

Collector-Base Capacitance

(Vcb

10V,

IE

0,

Emitter-Base Capacitance

(V EB

0.5V, Ic

0,

Gain-Bandwidth Product

(V CE

10V,

IE

10mA,

100

MHz)

125

fT

140

MHz

Noise Figure

= 5V, Ie = 100 M A, BW =
= 10 HztolOKHz)

(Vce
f

5Kfi

NF

See Figure
(on) = 150mA,
(Vce = 30V,
Time See Figure
(Vce = 30V, Ie(on) = 150mA,
Time See Figure 2
(Vce = 30V, Ic(on) = 150mA,
Time See Figure 2

I B1

15mA, Vbe (off)

I,

15mA,

V BE (off) =

I Bi

15mA,

I B3

150mA,

I B,

15mA,

I B2

Delay Time

Ic

Rise

Rs =

15.7KHz,

=0V)tt

dB

nsec

t,

12

12

nsec

15mA)

150

190

nsec

15mA)

t,

30

50

nsec

0V)

Storage
Fall

(Vce

30V, Ic(on)

DUTY CYCLE
P.W.

TO OSCILLOSCOPE
t

<

Ins

R>IOOK OHMS

2%

> 200ns
TO OSCILLOSCOPE

tr

> IOOK OHMS

lris

V(x"30V
'

VC C

FIGURE

1.

DELAY AND

RISE

30V

Cs

-/

TOTAL SHUNT CAPACITANCE FIXTURE, CONNECTORS AND PROBE

FIGURE

TIME EQUIVALENT CIRCUIT

llllli

lOpF

STORAGE AND FALL TIME EQUIVALENT CIRCUIT

2.

Ill

GES60C 6

ill

^ l

s'

-\ifvrltl

-T

Ni

"& Vr

u.

--

"^'^UrT
tf(

i*'KL*

'I
4\

$.

I]

TT
i

I!

w\
W-

l\x

,
1

%\\

III

BETA VS. COLLECTOR CURRENT

BETA VS. COLLECTOR CURRENT

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. COLLECTOR
CURRENT

1245

GES6006 -GES6004
l

GES6004, 06

T -IOIB'

III

"

||

="

Mill
GES6004

>
z

-.i

=-5

//.><

<^sL

*/

'

i-

"* *T

Hi

IOIB

1-- =

r'

=- = _ =r nl

=-* =T\ trf

mi

/y.

BASE-EMITTER SATURATION VOLTAGE

5

VS.

.1

g
.

-r- t-i-

5C-^

'

COLLECTOR CURRENT

^'-~6rK*

L^-*-3^''"

'it

--^1

TA =|25C
A

'%.'*

35 c

GES6004
GES6006
VOL

_L

Vce-5^

COLLECTOR CURRENT-

!-

-55'C

Ic

-.'

GES6O06
=

IO
-

IB
IB

p-'/y-

"T

'I

_^rtt

1 l^^rff

TRANSCONDUCTANCE

X"

_^fi>

5C

--

TA =| 2 5C^

VZ5-Cr^

COLLECTOR

VS.

CURRENT

<t

TA

-55

Ic

COLLECTOR CURRENT-mA

COLLECTOR-EMITTER SATURATION

VOLTAGE

VS.

COLLECTOR CURRENT

II

1!

[if]

nTTTir

GES6006
!

ii

lilt

Mm
4^1

T
1

W"~t

Yj][[ir
\

_i

if

^~

tIh^
COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

TEMPERATURE COEFFICIENTS
COLLECTOR CURRENT

itlli

Emffl

IlilN^

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

VOLTAGE

VOLTAGE

1000

COLLECTOR-BASE TIME CONSTANT VS.

COLLECTOR BASE TIME CONSTANT VS.

EMITTER CURRENT

EMITTER CURRENT

x\

GE serin 4

vCE

^s

VS.

=p=j

~i

qlOO

iov

v CE

6E! 6( 104

IOV

5
o

100

FS60 06

-io

~_

y
5

EM TTER

=
nun
G ;S 600 4

C URRENT

20

rmr

FT
GI-

raff

^
S6006

EM TIER CURR ENT -m *

Fffi===

Z0

ui
_|

-Sik^

&.

3s^nK
C*'

V*^

TT
tt

|[
I

EMITTER CURRENT

'ivv

--9

-J

"k\^

o
"

l0

a;it

jihVV-^

GES600 *

tfVV

5-fl

\
\

600

J_
VCB" COLLECTOR BASE]

REVERSE BIAS VOLTAGE -VOLTS

V EB -EMITTER BASE

GAINBANDWIDTH PRODUCT
EMITTER CURRENT

VS.

GAINBANDWIDTH PRODUCT
EMITTER CURRENT

1246

VS.

COLLECTOR-BASE & EMITTER-BASE

VS. REVERSE BIAS

CAPACITANCE
VOLTAGE

GES6004, 06

v
1

Li Ml
;:

TA=25C

VCE .5V

\\

ii

GES6004

nun

eouiva

EQUIVALENT BS

Hi

GES6006

\\

. I5.7K

^r

^i
|i

if

*rtt

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

_;.

'

T
a

vCE

25C

4- 6i:s BOO'

II

5 v. Ta ;25"c

Ed
I

Ft

/'

L-

,'T
1

**<^

"T

t r

:z^=

f^E^w[*

,,

^S;-^^- * -^

v-4-

-'

im

u,

^-^

'

If'

&

J600
GF 5600 5

T"

s /

_IL

'

_dlif

\\

VS.

COLLECTOR CURRENT

&

VS.

CURRENT- ma

COLLECTOR CURRENT

'^

**""

E -l VOLT
1.4

***s

1.3

^*" --^o^
l
--

^$0' *.*

1.2

ft

^
o

s
2

*H~

'

,'-\t

j-^'

-J

T
r~~

COLLECTOR CHARACTERISTICS

^\''>
'

"^

s'

.^-

!'' "^

S
?

s'

2
:

zz~

I'll

vCE

A'<-

sv.

::...

6ES6

J?

-,*/

/
/

.'

/'

--,-

_,_

'....

.&

Jr
IP"

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. AMBIENT
TEMPERATURE

^= SES6006
GES6004

X'-'
^^-

^
"s

rrr-

E RESISTANCE (OHMS)

NOISE FIGURE VS. SOURCE RESISTANCE

NOISE FIGURE VS. SOURCE RESISTANCE

7*

VCB .25V

GES60A4

==

\
A

\\

t"^

\l
\i

s-

^^.

Is?

Si=
"*!

^_

xi
s,

^.

X
v

^\;

fe^si
l_

COLLECTOR-BASE CUTOFF CURRENT VS.

AMBIENT TEMPERATURE

II

3ES6O0

S"

">

I'D"

25*C
1

"

r<*

-\

"^SSSs*fSs

"I"

r^.

sf"
\

^'

OK

IK

NOISE FIGURE VS. FREQUENCY

1247

NOISE FIGURE

VS.

FREQUENCY

Silicon

Transistors

PNP

The General

Electric GES6005 and GES6007 units are silicon

planar passivated
epitaxial devices developed specifically for high speed switching and general purpose
amplifier applications where ultra low noise characteristics are desirable. Complementary
versions of these units are available and are designated as GES6004 and
GES6006 respectively.

NPN

Features

Epoxy encapsulation with proved

reliability

Characterized for Industrial Serviee

Low Noise

Figure.

40V(iu;pri;o

Maximum

:;:

Performance comparable

to hermetic units
excellent characteristic stability under environmental stresses
85"C -85% Relative Humidity.

Low

PNP

for

are negative

maximum

absolute

ratings:

(t a

VcKS

Emitter to Base
Collector to Base

v,.

40
50

50

50

500

500

ibz

Volts
Volts
Volts
Volts

<t-0

2%

duty cycle)

800

800

Derate Factor (T<Derate Factor (T A

Pt
Pt

25C)
25C)
g 25C)
^ 25C)

.800
.400
8.0
4.0

.800
.400
8.0
4.0

2.41
I.I

L2

Watts

-65
-65

TsT

Tj

to +150 to 4-125 -

from

V.vi"

case for 10 sec.)

90

2.67

3.4 3

12.700

6.3

2.0

4.32

1.270

50
30

.2

(t*

t.3

.500

1.3

15
2.670 .080 .10 5

THIS SIDE.

C
C

Min.

GES6007
Max

Min.

Max.

40

40

Volts

V (HR)EHO

Volts

V(HR)CJ10

50

50

Volts

50

50

Volts

(Io

100>A,

(Ic=

IK

0)

Breakdown Voltage

100,* A,

Vrk

0)

(liH)CKS

Collector-Emitter Saturation Voltage

(Ic

100mA,

I,.

10mA) t

VCK(S A T)

10mA)f

Vl.KtS.AT)

.75

10mA) t

V,, E

.55

.80

.55

.80

100mA)

hf K
h -K

50
100

300

60

100
200
110

500

h lE

Base-Emitter Saturation Voltage

(Ic
100mA, I

.400 Volts

.400
1.0

.75

1.0

Volts

Base-Emitter Voltage

(Vce

5V,

Ic=

Volts

Forward Current Transfer Ratio

(Vc K
(Vcf.
(Vcr.

=
=
=

IV, Ic
IV, Ic
IV, I c

=
=
=

Collector Cutoff Current

(Vci.
(Vci.

=
=

25V, I,.
25V, Ik

= 0)
= 0, T A =

Emitter-Base Reverse Current

(Vki.
3.0V, Ic

10mA) f
100mA) f

=
= 0)
t Pulsed, 300/isec. S2% duty cycle

nA

IcHO

10
10

10
10

mA

Iki.o

20

20

nA

Ici.o

100C)

1248

3(THREE LEADS) *t>2 APPLI ES BETWEEN L| AND L2.

*b APPLIES BETWEEN L2 AND 12.70 MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

Vu.lDCKO

Collector-Emitter

1.

0)t

.1

Emitter-Base

- .05

.2 50

Breakdown Voltage
(I K
100 M A, Ic
0)
Collector-Base Breakdown Voltage

.1

Breakdown Voltage

10mA,

unless otherwise specified)

Symbol

NOTES

10

6 02 2
O 6 .01 9
.17 5 .205
.12 5 .16 5
.09 5
5
.0 4 5 .0 5 5
.13 5 .170
.0

5200
4.1

MAX.

.17

NOTES
THREE LEADS
2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

Watts.

mW/C
mW/C

GES6005
STATIC CHARACTERISTICS

(Ic=

48

INCHES
MIN.

+260

electrical characteristics:
Collector-Emitter

5.3 3
.5 5

50 1.395

2.920

Temperature

Storage
Operating
Lead (Vw"

80

<M

Li

Dissipation

Total Power (T,Total Power (T A

40
3.1

mA
mA

4
4.4 5

Current

Collector
Collector (peak, pulsed 10 Msec,

MILLIMETERS
MAX.

MIN.
4.3 2

*b

GES6007

40
50

Vc,

SYMBOL

25, unless otherwise specified)

GES6005

3.

EMITTER
BASE
COLLECTOR

voltage rating.

Observe Proper Bias Polarity.

Voltages

Collector to Emitter
Collector to Emitter

TO-92

Vci-: (sa'i)

Voltage and Current Values

SEATING PLANE

GES6005 07
f

DYNAMIC CHARACTERISTICS
GES6007

GES6005
Symbol

Min.

Max.

Typ.

Min.

Typ.

Max.

Forward Current Transfer Ratio

(I,,

10V,

IKHz)

h,v

75

Vc,.

10V,

IKHz)

h,

1.5

1mA, V,

10V,

IKHz)

10V,

1mA, V,k

450

150

17

he

45

60

f=lKHz)

h re

12

MHz)

C,

4.5

4.5

pP

c,.

17

25

15

20

pF

340

500

400

560

MHz

1.5

dB

75C

Input Impedance

= 1mA,

(I K

10

25

Kohms

75

15C

Mmhos

Output Conductance
(I,.

Voltage Feedback Ratio

= 1mA,

(I,,

V,- K

Collector-Base Capacitance
(V,-,.
10V, Ik

0, f

Emitter-Base Capacitance
(V,,,.

0.5V,

(V,k

10V,

Ik

Noise Figure

= 5V,
Rs = 5K -\ f

(V,

V
Rise

Time

,-.,:

30V,

(Off)

I,-

Storage Time

(V,r
I,,,

MHz)

10mA,

Hz

100

BW

+100,xA,

10

to 10

MHz)
15.7

(on)

KHz,

240

NF

150mA,

I,

15mA,

150mA,

In,

15mA,

0V)

see figure 2

= 30V, L(on) =
= +15mA)

(V,,=

225

fl

KHz)

Mon) =

see figure

I,,,

0V)

30V,

V,.K(0ff)

Time

see figure

(Vrc

Fall

li:

0, f

see figure

Delay Time

(V,v

I,-

Gain-Bandwidth Product

xlO-4

24

150mA,

In,

13

13

130

150

25

50

15mA,

30V, L(on)

= +15mA)

150mA,

Ib,

15mA,

f'

< 2ns

TO OSCILL
t r

R-

TO OSCILLOSCOPE

>

t r

R:

fi

ns

2IOOK
_ J

V CC

V CC =-30V
1.

DELAY AND

rjws^

RISE TIME

> IOOK

200

200

FIGURE

<- Ins

TOTAL SHUNT CAPACITANCE

FIGURE

EQUIVALENT CIRCUIT

2.

"

FIXTURE, CONNECTORS, AND PROBE

-30V

lOpF

STORAGE AND FAIL TIME EQUIVALENT CIRCUIT

GES6005

I
_^

ll.JjLL_.

IJiijJ

..^l:jL-

i_J.,li.L.l_

BETA VS. COLLECTOR CURRENT

BETA VS. COLLECTOR CURRENT

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. COLLECTOR

CURRENT

1249

GES6005, 07

S600S

1 =

H-.4-I--

L_

GES6003

GES60O7-r

^^c^^^*

/'

'^^^^'^^^^^^
= =^
^^^^^^

"^

^f

=-*=-=" *~

_""""H-

=4il (##/h

5311
T^t

+f

w
f=tgj
IB
IN
4
LMT

Tt
1

W'

"TT

ffi--^^--

.--.rf_.

^y\T

'~^I^T

~~

"

H~

:
!

S: "M

I'T^

"+-

;-7!

TRANSCONDUCTANCE

COLLECTOR

VS.

CURRENT
~

__- Tr:lt~

5*---rrffi

^-/-vir

1>#-

?+" 44+

FRr

*
\

ll

UXJ

".'

i- S^

~^

| |_}-|jffl:

H\
--

==E|M

mfl

Uji j=5

'

IL

b--

\-

'

i,|

It T

COLLECTOR CURRENT

itt^iffi:.-j

BASE-EMITTER SATURATION VOLTAGE

_l

Sr

t-

VS.

f^GI[S6CNU7

tzLmtf

|-H-

vii?^H

-COLLECTOR CURRENT

-.

$}/'

^rz^*^

k^

:.

_ui

l;ii

ill

Ijjii'

COLLECTOR-EMITTER SATURATION

VOLTAGE

rrrn

I!

'III

-8ES600fr[l

Jill

~
.'

H*

"!:

tffl-

T|TT

tr

>=

COLLECTOR CURRENT

INI

III

VS.

V7^
p^- tflN^S
iBZITa

\1
^~
r
c

'

-so^ 4

TEMPERATURE COEFFICIENTS
COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

VS.

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

VOLTAGE

VOLTAGE

rnlOO

COLLECTOR-BASE TIME CONSTANT VS

EMITTER CURRENT

COLLECTOR BASE TIME CONSTANT

EMITTER CURRENT

ffrff

4fl

6ES6005

-=

CB

100

i
r

4
=

vce

10?

"

3^ 5

=1

-tit.S60uf

EMIT ER CURR

0ES6OO7
V
.HQV

vce-rov

IE

_-_

~m
Tit

VS.

\Z
I

onn

1|

22

-EMITT er'cur E T

24

26

28

30

w
f

to

i-zj

/6ES6 oos

_ 4I

GEseoo r

^V"*^-!,

"t2=

~ -sv^i;* T

10

-1.0^

GES60

(00
\

""T

1.

-ii

ill

in
I

e -EMiTTft

CURRENT-mA

GAINBANDWIDTH PRODUCT
EMITTER CURRENT

VCB -

It

-EMITTER CURREN'

VS.

GAINBANDWIDTH PRODUCT
EMITTER CURRENT

OR

20

30

>-

V EB -EMITTER BASEj

VS.

COLLECTOR-BASE & EMITTER-BASE

VS. REVERSE BIAS

CAPACITANCE
VOLTAGE

1250

10

COLLECTOR BASE")

50

GES6005, 07

^^

"

L \

!'j

|[|l

\:

GES6005I!

i\

'li|

Il.'^Ji/L:

x*.

U&L

y^

Ski||^
/
S

e55iV1Si 5I

^V

".!.".

-UlliJ
;\/ iL^

ii

]/

_|l

f-i-K

L _LL-

jL

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

"

OESSOOT

.".r.

-;4in:ii_^M3

COLLECTOR CHARACTERISTICS

E
.

&

VS.

COLLECTOR CURRENT

&

VS.

COLLECTOR CURRENT

KSi S005 0ESC0O7 T71 "">"' ^~~ 'c~

1_

M J ^^
y
<*

*CE

'

^1/

-w

'

'i

jf\
&7

11,

xn

\\

>5
||

1/

II

I/GES60

j'j

\<\
I

ill

\/\

51fT

lj

'

GES

"

\/\

A
/

\\

!
j
j

/m

1-

-_x__X
9

^d2

TLj

/S

IU

=il

.__

\!
L\l

'

TJ

VC

11/
z

1
\

"f

LuL

ki

*j/

7_f^;

jfe

rm

"

-AMSIEMf TWESOTWS-(

^"T
^J

n?:

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. AMBIENT
TEMPERATURE

GES6009 GES6007S^

^pr

'

"

\i

^,

i/1

^_ii^J

K^^l

Mil!

<r

-Mil

lb

EES

1
1

35

t"'

M
s

"'

'

TTi

'

^ES6005J

X^iitH

NOISE FIGURE VS. SOURCE RESISTANCE

ii:

S-

J&E-A

-L^.
;

l:

-4=PS

NOISE FIGURE VS. SOURCE RESISTANCE

==

'

'

'

i
1

,m

tCnK.
\i is-

S5*

25"c

\
~N

lj
,

*"

'

'

>

"

Ml

IU

5
i
b!

s?*

J
u
'

Ssi

1
1

^_^

Sgo

--

^-^^

2* .-

"""fS^a
'

-^1
?Kn

<D"~;

tSS

m>

II!

[Ojn

^^60m

=_::

-AMBIENT TEMPERATURE-

COLLECTOR-BASE CUTOFF CURRENT

AMBIENT TEMPERATURE

VS.

NOISE FIGURE VS. FREQUENCY

1251

NOISE FIGURE VS. FREQUENCY

Silicon

Transistors

The General Electric GES6010 and GES6012 devices are silicon, NPN, planar epitaxial
passivated transistors designed primarily for high level linear amplifiers or medium
speed switching circuits and are especially suited for industrial control applications.
Complementary PNP versions of these types are available and are designated as

GES6011 and GES6013

respectively.

Features

Epoxy encapsulation with proved reliability.

Performance comparable to hermetic units

mw

absolute

maximum

Integral Heat Sinks available Up to 1

Power Dissipation. Order as GES6010- Jletc.
Beta hold-up out to 800 mA.
40 Volt bvceo ratings.

excellent characteristic stability under environmental stresses 85C 85% Relative Humidity.
500
Power Dissipation.

Integral Heat Sinks

Power Dissipation.

ratings:

Voltages

(Ta

Up

to

TO-92
1

GES6010

GES6012
40
50

Vceo
CBS

40
50

Emitter to Base
Collector to Base

V EBO

VcBO

50

50

*b
D

Volts
Volts
Volts
Volts

2%

800

800

/usee,

1500

1500

< 25C
T > 25C
Total Power T < 25C Heatsink
Pt
Total Power T < 25C Heatsink
Pt
Derating Factor T > 25C Heatsink
Derating Factor T > 25C Heatsink
Total Power

TA

A
c

.500
4
.625

.500
4
.625

1.0
5

1.0

7
7

55

.4

P.4

48

COLLECTOR

INCHES

NOTES

MAX

170 .210
2

.0

.0

6
6

2?

1.3

.01

7 5 .205
4.1 9 0, .12 5
65
2.67
.09 5
5
.1

.1

I.I
50 1.395 .045 55
3.430 4 32
.13 5 .170

12.700

Li

L2

.5

1270

6.3 5

2.920
s

BASE

3.

MIN.

52

241

Dissipation

Derating Factor

5.3 3

180

E
e
e1

mA
mA

320

4.4 5
3

Io

MAX.

MIN.

*b2

Current

Collector
Collector (peak, pulsed 10
duty cycle)

MILLIMETERS

SYMBOL

25C, unless otherwise specified)

Collector to Emitter
Collector to Emitter

available

EMITTER
2.

00

.1

Watts

3
3

2.670 .080

2.0 3

1,3

- .05

.2 50

.10 5

REFERENCE

mW/C
Watts
Watts

mW/C
mW/C

Temperature

Storage
Operating

Lead

(Vie"

-65
65

TsTG

T,

(t a

= 25c, unless otherwise specified)

GES6010
STATIC CHARACTERISTICS

C
c

|-260

electrical characteristics:

(Ic

+150
+150

from

case for 10 sec.)

Collector-Emitter

to
to

Symbol

Min.

Max.

GES6012
Min.

Max.

Breakdown Voltage

10mA,

IB

= 0)t
=

V.B

40

40

Volts

Emitter-Base Breakdown Voltage

(I E
100^A, Io
0)

Volts

Collector-Emitter

(I c

Breakdown Voltage

lOO^A, Vbe

0)

I.

V (BR)CES

50

50

Volts

50

50

Volts

T0-92
SYMBOL

Collector-Emitter Saturation Voltage

= 100mA, I B = 10mA) f VCK(BAT)

(Ic = 500mA, I B = 50mA) f
VcECSAT)
Base-Emitter Saturation Voltage
(Ic = 100mA, I B = 10mA)
V BE(SAT)
(Ic = 500mA, I B = 50mA) f
VbB(8AT>
Base-Emitter Voltage
(Vce = 5V, I = 10mA) f
(Ic

.70
.80

.130

.130

Volts

.500

.500

Volts

.88
1.0

.70
.80

.88
1.0

Volts
Volts

.55

.75

Volts

A
B

$b
*b2
C
e
ei

.55

.75

Forward Current Transfer Ratio

= IV, Ic = 100M A)
= IV, I c = 10mA) f
(Vce = IV, Ic = 100mA) f
(Vce = 2V, Ic = 500mA) f

(Vce

(V CE

hpj

hn

45
100
85
25

300

70
200
170
40

Li

L2

500

(Vcb

= 25V, Ie = 0)
=

t Pulsed, 300/tsec,

=
g 2%

10

10

nA

I EE

20

20

nA

NOTES:
(THREE LEADS)

MAX.

,4

INCHES
MIN. MAX,

6.6 8

.4

10.1

7
7

.5

3 3

.4

8 2 .0

.0

.40
6 .02
6 .01 9

1252

.1

.1

qi

2.21

REF.

.145
.156 REF.

REF.

.18 7 R

3630

3.9 6

|.l

EF.

56

<b2 APPLIES BETWEEN Li AND L2 ^bAPPLII

BETWEEN L2 a ,5"(I2.70MM) FROM REFERENCE PLANE.
DIAMETER IS UNCONTROLLED IN L, AND BEYOND. 5"(l2.70Mld
FROM REFERENCE PLANE.
2.M0UNTING HOLE IS FOR #4 SCREW. HOLE WILL ACCEPT /
.113 (2.87MM) DIAMETER PIN INSERTED PERPENDICULAR,
TO THE MOUNTING SURFACE.
I.

duty cycle

NOTE

.263

- .5 2
13.200
2.420 2.660 .095
05
I.I 50
1.395 .0 4 5 .055

3.5 5
40
1.570 REF. .0 6 2 REF

12.700
.5
1.270 .0 5

6.350
.2 50

q
r|

I eE

MILLIMETERS
MIN.

3.96

4>f

Collector Cutoff Current

Emitter-Base Reverse Current

(Veb
3.0V, Ic
0)

EMITTER

2.BASE

3.C0LLECT0R

Collector-Base Breakdown Voltage

(Io
100^A, I E
0)

GES6010, 12
S6012

GES60I0

DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
1mA, Vce
(Ie
10V, f
Input Impedance

(Is

1mA, Vce

1mA, Vce

Min.

Typ
Typ.

Max.

IKHz)

65

450

130

750

1.5

12

2.5

20

Kohms

10V, f

IKHz)

hi.

10 V, f

IKHz)

h e

45

70

umhos

Ccb

10

10

PF

C.b

50

45

pF

Output Conductance
(Ie

Max.

Typ.

Min.

Collector-Base Capacitance

(Vcb

10V,

IE

0, f

Emitter-Base Capacitance
(V EB
0.5V, Ic
0, f

Gain Bandwidth Product

10V, Ie
(Vce

MHz)

= 1 MHz)

10mA,

MHz)

100

= 5V, I E = 100^A, BW =
= 10 Hz to lOKHz)

(Vce
f

See Figure
30V, Ic(on) = 150mA,
Time See Figure
(Vce = 30V, Ic(on) = 150mA,
Time See Figure 2
(On) = 150mA,
(Vce = 30V,
Time See Figure 2

Delay Time

(Vce
tise

15.7 KHz,

Ic

(Vce

30V, Ic(on)

150mA,

NF

5Kfi,

135

335

425
3

MHz
dB

Ii

15mA,

V BE (off) =

0V)

ta

12

12

nsec

I Bl

15mA,

V B E(off) =

0V)

t,

25

25

nsec

Ii

15mA,

I B=

15mA)

t.

300

350

nsec

I Bi

15mA,

I B2

15mA)

100

150

nsec

Storage
Fall

Rs =

105

fT

Noise Figure

RW.il us

RW.

DUTY CYCLE

TO OSCILLOSCOPE

tr -^ Ins
Ri >. IOOK

OHMS

-1

V CC =30V
RISE TIME

Cs

GE S60I2

jv.
\

Vcc*30V

x-3V

2.

STORAGE AND FALL TIME EQUIVALENT CIRCUIT

I !

I
.'

T
1

"
!5

"STf

i'"

f
1

1*$^'

1
'

V x lT
u
"1
^

,!

\ - V!

BETA VS. COLLECTOR CURRENT

-/

FIGURE

llll

Ins

TOTAL SHUNT CAPACITANCE FIXTURE, CONNECTORS AND PROBE' lOpF

EQUIVALENT CIRCUIT

<

DELAY AND

t r

16V

200

1.

TO OSCILLOSCOPE

R,>IOOK OHMS

> 200ns
*

FIGURE

>

14V

2%

COLLECTOB CWWENT-n

BETA VS. COLLECTOR CURRENT

'"'

iC -

COLLECTOR

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. COLLECTOR
CURRENT

1253

GES6010, 12
urn

iiiiii

GES60I0

III

TGES60l2Tffl

GES60

/I.
-

7-f
- +

2*

OIB

12*

ii
.y/

=^q

"::.

-''',-'/
','.'.:-

\zv~

'*

BASE-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

VS.

;-

COLLECTOR CURRENT -inA

...

//*

s
-7*7*3

-^
r c COLLECTOR

'.'Zrs
vy"

-^S:

-V

-'

(S

'

TRANSCONDUCTANCE

VS.

COLLECTOR

CURRENT

i<^"j
.,

-._5i_

S
i
s
1

c -COLLECTOR CVPREUT

- mA

VOLTAGE

VS.

GES60I0 GES60I2
B
V BE AT V
CE

COLLECTOR-EMITTER SATURATION

+ sv Ta
.

Sit TO IZic

COLLECTOR CURRENT
I

i
||l

ffl-

IS
?

llll

llll

Ml

I!

GES60I2

fl
tn

ES6010

iimi

!i!I

'

'

ft
-t

T
I

S=i

;*>.

P-

X^2

S^

&H

II

4
-1

r-fltt

-Ma

4-

^-

-*Uv

Tfr

'

ijttfesp.

- BASE CURRENT

COLLECTOR-EMITTER SATURATION
VOLTAGE VS. BASE CURRENT

fl

CURHENT-ltiA

TEMPERATURE COEFFICIENTS VS.

COLLECTOR CURRENT

TT

COLLECTOR-EMITTER SATURATION
VOLTAGE VS. BASE CURRENT

->w*>
-

xi

c b

<:

StS6 012

GES6 010

GE 6012

ce

II

5
*

GES60I0
"

'aw

llll

10

ffl

*Sj^

Jlov

^\

"fl

in

u
a

== == = =

I^^
b

GES 6012

^~-^:
"-ill

-==

Tn

I
o
I

III

III

111
I

C -C0LLECT0

OJRMNT-mA

j-COLLECTOR

a"WT

V CB -COLLECT0R-BASE,VEB -EMITTER BASE

REVERSE BIAS VOLTAGE- VOLTS

GAINBANDWIDTH PRODUCT
COLLECTOR CURRENT

VS.

GAINBANDWIDTH PRODUCT
COLLECTOR CURRENT

1254

VS.

COLLECTOR-BASE & EMITTER-BASE

VS. REVERSE BIAS

CAPACITANCE
VOLTAGE

j <

<tE

^KSTs^

GES6010, 12
I SESteGI

?/

TA

>jr

r^

BOj;

^^y
-^
^^y /

IB

.-

j~-~

>..

30

40

3
-

^y

ji

50

7K H,

/?

/?

^<S>

>,

\>^

or

^y

NV^>-

>

s&K_

"""'

"

-^ -2

s'

-%-'''''
-

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

"

25 c

"

TA

^
A**

ao

VO

OK H,

.\N
"""

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

\
25

COLLECTOR CURRENT

"

//

/
'
TO

'

*;-- ..."

,.

fREQUENCY-flOH.
EQUIVALENT 8S (5

,'

,_

-0

20

III

QESe

,'

*V f^

VCE

y/

45

/,

40,.*

'

>

-f

FREQUENCY-, -10 HI TO IOK Mi

EQUIVALENT BW-I5 7RH,

'

,00*

Mill

\a0j-

25"C

'

TO^

^
&0j.

50 &

~-~

^ s

=Q.-s 6010

//

'a

10

Kf^Anir'
VCE

2 St "

>^

_j
20 *

25

rF -coiLLECTC

35

45

410

r-T

V mT
s

i.iJ

ffflf
__,

rnr*"("11

-^^

IQ0 W

'

i
-^

E=

50

E=

VOL AGE-VOLTS

'' 11

-^

\k

>*V

iu UU1

ji^".

IB'O
5

'

3<-

,+.^

u^y^

5 V.TA .

"'ill

I*

- WOK

|-

Hi

COLLECTOR CHARACTERISTICS
!

-7

2.4

.__*

1-8
1.7

VCE

iv

COLLECTOR CURRENT-*A

^LECTOR CURRENT-

:S

J?7

^Ki^.-*

^^^

j.f
1

&

COLLECTOR CURRENT

VS.

&

COLLECTOR CURRENT

VS.

1 ^.imfc-

>-ntf
'"

J
*

""

I
'

601?

!U

iy

'

*s

It

c SOniA

GE 56010

'"

p
a

[II
GES60I2-

27

""

_u

TA

'

2^t

....

-60

-30

'

$1.

//

*'

/
^

_
.

ft

'"

\
\A
X.
^

60

30

120

ISO

T.-AMBIENT TEMPER

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. AMBIENT

TEMPERATURE

^T^N^

IK

GES60I0"
GES60I2 V

cs'"

::;=::

-n

^* c >

R s -S0URC RESISTANCE

L. ,:.'...
h .*'---

l^j

R - SOURCE RESISTANCE -OHMS

s

-OHMS

NOISE FIGURE VS. SOURCE RESISTANCE

NOISE FIGURE VS. SOURCE RESISTANCE

32

III

30
ze

1
!

T-25t

26

GE

V CE" 5V

T A' JL

>

k Z0

18

'*

^.

N*

>>&

*
,

10

COLLECTOR-BASE CUTOFF CURRENT VS.

AMBIENT TEMPERATURE

^^

^>?2?

'

"Hjj.

r^(

y<nil l^

T"-\

""*?

=L

-\~
NOISE FIGURS-VS."' FREQUENCY

1255

"o,

\^

'

__

"^^^

L-.L .1

IOK

NOISE FIGURftfXtltEQUENCY

IOC

Silicon

Transistors

The General Electric GES6011 and GES6013 devices are silicon PNP, planar epitaxial
passivated transistors specifically designed for high level linear amplifiers or medium
speed switching circuits, and are especially suited for industrial control applications.
Complementary NPN versions are available and are designated as GES6010 and

GES6012

respectively.

Voltage and Current Values for PNP are negative Observe Proper Bias Polarity.
Features
Epoxy encapsulation with proved reliability
Excellent
Beta linearity over
Performance comparable
current ranges
to hermetic units
excellent charactistic stability under environ. Beta hold-up out to 800 mA
mental stresses 85C 85% Relative Humidity.
40 Volt
<Bit)Ci;o ratings
BOO mw Power Dissipation
Integral Heat Sinks available
:

wide

Power

maximum

absolute

extremely

Up

(t a = 25c, unless otherwise

GES6013
GES601

ratings:

Voltages

Collector to Emitter
Collector to Emitter
Emitter to Base
Collector to Base

VceO

to

Order as GES6011-J1

Dissipation.

etc

specified)

Volts
Volts
Volts
Volts

V CES
V EBO

40
50

40
50

VCBO

50

50

Ic

800

800

Ic

1500

1500

Current

Collector
Collector (peak, pulsed 10
2% duty cycle)

mA
mA

/isec,

Dissipation

< 25C
T > 25C
Total Power T < 25C Heatsink
Pt
Total Power T < 25C Heatsink
Pt
Derating Factor T > 25C Heatsink
Derating Factor T > 25C Heatsink
Total Power

TA

.500

.500
4
.625

1.0

1.0

Derating Factor

4
.625
5

Watts

mW/C
Watts
Watts

mW/C
mW/C

Temperature

Storage
Operating

-65
-65

Tsto
Tj

TL

electrical characteristics:
STATIC CHARACTERISTICS

(Io=

C
C

h260
(T A

= 25C, unless otherwise

GES6011

Emitter-Base
(I E

+150
+150

from

= VZ2

case for 10 sec.)

Collector-Emitter

to
to

Symbol

Min.

Max.

specified)

GES6013
Min.

Max.

Breakdown Voltage

10mA,

IB

0)t

V<br>ceo

40

40

Volts

Breakdown Voltage

100^A,

Ic

0)

Volts

V(BR)EBO

Collector-Base Breakdown Voltage

(Ic
100/xA, I K
0)

Breakdown Voltage
100 M A, Vbe
0)

50

50

50

50

TO -92

Collector-Emitter

(Ic

500mA, I B

(Ic=

=
=

10mA) f VcE<S A T)
50mA) t Vce (sat>

= 10mA) f
= 50mA) t

.300
.750

"

Base-Emitter Saturation Voltage

(Ic
100mA, I B
(Io= 500mA, Ib

VbE(SAT)

Vbe<S A T)

.70
.80
.55

.300
.750

1.10

1.10

Volts
Volts

.77

.55

.77

Volts

.95

5V,

=
=
(Vce =
(Vc E =
(V CE

IV,
IV,
IV,
2V,

10mA) f

Ic
I

Ic

=
=
=

100 M A)

10mA) f
100mA) t
500mA) f

Ic=

}1f

hp

60
100
75
45

300

120
200
150
80

L
Li

500

L2

0P

25V,

IE

0)

10

10

nA

20

20

nA

Emitter-Base Reverse Current

(Veb =
fPulsed, 300

3.0V, Ic
jsec,

.4

Collector Cutoff Current

(Vcb

#2

0)

g2% duty cycle

Forward Current Transfer Ratio

(Vce

.4

ei

Ic

NOTES:
(THREE LEADS)

.0

.0

3.5 5

1.570 REF.

12.700

1.270

6.350
-

39 6
2.2

3 63
REF.

REF.
3. 9 6

6
16

MAX NO

.263
.40
.0 2
.0

- .5 2
.095 .105
.045 .0 5 5
40
62 REF

13.2

420 2.660
1.395
I.I 50

qi

*b

MIN.

6.6 8
10.
6
7
.5 3 3
7
.4 8 2

.70
.80

.95

INCHES

MAX.

MIN.

Base-Emitter Voltage

(V CB

MILLIMETERS

SYMBOL

Collector-Emitter Saturation Voltage

(Ic
100mA. I B

.1

.5

.2

.0

50

.145
5 6 REF.
.18 7 R EF.
56
.

|.l

<bb2 APPLIES BETWEEN L( AND L2 bAPF

BETWEEN L2S 5"(I2.70MM) FROM REFERENCE PLANE.
DIAMETER IS UNCONTROLLED IN Li AND BEYOND. 5"(l2.70r
FROM REFERENCE PLANE.
2.M0UNTING HOLE IS FOR #4 SCREW. HOLE WILL ACCEP
.113 (2.87MM) DIAMETER PIN INSERTED PERPENDICLM
TO THE MOUNTING SURFACE.
I.

1256

GES6011.13
DYNAMIC CHARACTERISTICS

GES6013
Typ. Ma K.

GES601
Min.

Forward Current Transfer Ratio

(I E

Max.

Min.

10V,f

lKHz)

h,.

80

450

160

750

10V, f

lKHz)

hie

1.5

15

2.5

30

Kohms

= 1mA, Vcb =

10V, f

lKHz)

h.

50

150

jumhos

C,

15

15

pF

Ceb

55

55

pF

= lmA,Vo E =

Input Impedance
(I B
1mA,

Vck

Output Conductance
(I B

Typ.

Collector-Base Capacitance

(Vcb

10V, Ik

0, f

MHz)

Emitter-Base Capacitance

(V KB

0.5V, Ic

MHz)

10mA,

0,

Gain Bandwidth Product

(Vce

10V,

IK

30

MHz)

Noise Figure

Vck
f

= 5V, Ik = 100 M A, BW =
= 10 Hz to 10 KHz)

Delay Time

see figure

(Vcc=

V E (off)
Rise Time

(Vrc=

In*
Fall

Time

150mA,

IB

see figure 2

= 30V, Ic(on) =
= 15mA)

150mA,

150mA,

(Vcc=

IB

i=
i=

30V, Ic(on)

IB

,=

dB

15mA,

10

10

35

35

375

450

50

75

15mA,
15mA,
t.

Ibi

MHz

300

100

NF

0V)

see figure 2

Ib 3

150mA,

R s = 5K?

30V, Io(on)

V BB (off) =

(Vcc

KHz,

0V)

see figure

Storage Time

30V, Ic(on)

15.7

250

75

fT

15mA,

15mA)

TO OSCILLOSCOPE
*-t,<lns
R..2 IOOK

TO OSCILLOSCOPE
tr Sins
R:

>IOOK

V CC

VCC =-30V

FIGURE

1.

DELAY AND

RISE TIME

C.

EQUIVALENT CIRCUIT

TOTAL SHUNT CAPACITANCE FIXTURE, CONNECTORS, AND PROBE

FIGURE

2.

-30V<

lOpF

STORAGE AND FALL TIME EQUIVALENT CIRCUIT

CE .-(V

.i^me^S*
.

~^\

G :s60

l!

hU

11%

III

4
4

mT
\
J- TA

s*

IZ5-C

"S

'

^"ii'mi""

GE S60I"5

4-tm"
1

II

-S'*C

^V

A\ J
\

I
lH

BETA VS. COLLECTOR CURRENT

BETA VS. COLLECTOR CURRENT

1257

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. COLLECTOR
CURRENT

GES6011, 13
GES60I
l

GESGDII "

^tH:#

p|-~4h

i,.-L-c
!

vp.

'

- Tlll'Zll

i
j

ji. 2-

:j

l
1

\J&t~-

.
,

s 1/>J
I

-f-

^7 /*

'-'

$r%^

-"

BASE-EMITTER SATURATION VOLTAGE

5-C

COLLECTOR CURRENT

VS.

;*-

'

r-

\
I

Tfl .Z5*C

4_

/
II

Mill

"GE'sebVi''

_illlGES60i3r;

TF

^ ^^

:::

GES60I3

:::

tttt

T
T
T

B
-ci

"5
Tfl

55 Cc

==i

==
1.

S=- 'A%

ill

-.'-.I

ill

'zit'"

It

/.

^'

"

5*1
s^-fwr

22

Ay

TRANSCONDUCTANCE

VS. COLLECTOR

CURRENT

a *~-j

^T

fl

125-C

~*^

.zs*c.

-,

^ ;==

-"^

...

ft

--":<

It

\1

"^5VC
1

II

Tiiiiiiii

nun

GES60II.GES60I3

COLLECTOR-EMITTER SATURATION

VOLTAGE

VS.

COLLECTOR CURRENT
III

GES60II

III

Mill

II

III

.
1

1 k
s |

3-
p|
2;

ei

MM
1

111

^;

"^c^>-. AflrSOmT'*

/JO0fj

Safes-

--CE

CE

GES60I3 v

.,c

ce

c, b

441

.io

.S.=v

([

G :S60I3

100

CE .2V

CE
CE

-7

-tv

.o.=-

H1

iii

=-< E560II

-4-

VS.

VOLTAGE

TEMPERATURE COEFFICIENTS
COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

VOLTAGE

Esson

JOnij

-ic^.

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

JL
1

s
*

V CE .!V
V

CE .0.5V-

=J

rf

^tt-^^^

cb

J|

,G ES60II

j-

10

.A.

1
,

-COLLECTOR CURRENT- mA

GAIN BAND WIDTH PRODUCT

COLLECTOR CURRENT

V - COLLECTOR-BASE
CB
I r -COLLECTOR CURRENT-n

VS.

GAIN BAND WIDTH PRODUCT

COLLECTOR CURRENT

1258

V F _-EMITTER-BASE

VS.

REVERSE BIAS VOLTAGE-VOLTS

COLLECTOR-BASE & EMITTER-BASE

VS. REVERSE BIAS

CAPACITANCE
VOLTAGE

GES6011, 13

II

'

11 yi
T

]!

\l

''

1
1

TGES60I3

~r~i

EQUIVALENT Bw.lS.

%\ 4

KM!
L

:
!

'

rV

vT

/i

'

i$y

L>

<J-y^

"J^\l

''

>

/jii/

-"%.

/ y,"
V
/ '/ /
'///
jr/

>

i
1

~T

ES60I3
.J5"C

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

ft

ts 'v

/ 2>

^^

r.**

-== tff E ~G S60II

,o^i^*

^=

=^=

ffi'GE 56 01^

-t--ft

y^
^

!'

_sOr.

'

__

-2tv"

TA

':

U+t= j = =

IB"

'

zSst

J-J

.'

T..^

+|fi-

N=eJ

-+jj-7^^*"
"Vtr

ia

_1--

'

-?^
,

t
if'-

COLLECTOR CHARACTERISTICS

Ij

t"

l\\\

-COLLECTOR VOLTAGE - VOLTS

__ ..j

"

1~

:Eh=

TT

"T

t.

if!

^^~I=

'

.'

4^5>

7
'""IT

"

>^Y t*+t
" ^

5
|

tit

it
v
iv
ce'"

^ ef

GESoun
GES60I3

\
'

'
I

-5
c

&

'

COLLECTOR CURRENT

VS.

17

16

^-%-

COLLECTOR CURRENT

ISO

150

"

'7i

'"7
!

7_GES Oit/
r

'

*/

*/

ce" 5V

rnx

-3

OIRHl
*

/\

iu

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. AMBIENT
TEMPERATURE

,p
*S-\,

"-^U^^"

GES 3011 GES6 013c

VS.

"

&

gf_

?f

IS

30
60
.-AMBIENT TEMPERATURE -C

-5

>o

-30

mA

-60

-7^

i
i

=^=t

NOISE FIGURE VS. SOURCE RESISTANCE

NOISE FIGURE VS. SOURCE RESISTANCE

,-!SV

111

'

T
I

GES60II
V --5V
CE
T*" Z9 "C

3ES60I3

V
T

CE

-5V

"
A Z5 C

'

S
^+

S&

'

\
^

^s

C-.04Aio0

T"^
iT

'=s&
COLLECTOR-BASE CUTOFF CURRENT
AMBIENT TEMPERATURE

If

X*

VS.

^ImAIOOKO

3Qg_

<600

~~=^|;

NOISE FIGURE VS. FREQUENCY

1259

'

['"'

NOISE FIGURE VS. FREQUENCY

Silicon

Transistors

The General Electric GES6015 and GES6017 devices are silicon PNP, planar epitaxial
passivated transistors specially designed for high level linear amplifiers or medium
speed switching circuits, and are especially suited for industrial control applications.
Complementary
versions are available and are designated as GES6014 and

NPN

GES6016

respectively.

Features

Epoxy encapsulation with proved

Performance comparable
excellent

charactistic

mental stresses 85C

500

mw

to hermetic
stability under

85%

Excellent Beta
current ranges

reliability

units
environ-

60 Volt

Relative Humidity.

absolute

PNP

are negative

maximum

V (br)cko

T0-92

ratings

GES6017

60
70

60
70

VCES

V EBO

V CBO

70

70

3.1

2.41

1.1

g2%

800

Ic

800

/xsec,

L2

6.3 5

1500

1500

Io

.1

.13 5 .170

.500

1.270

2.920
s

.09 5

4.32

12.700

L|

mA
mA

.12 5, .16 5

67

',?

6 01 9

75 205

4.1

022

NOTE:

210

.17

50 1395 .045 .055

3.4 3

INCHES
MIN MAX.
.0

48
20

8^

Current

Collector
Collector (peak, pulsed 10
duty cycle)

55

7
7

4 4 5

Volts
Volts
Volts
Volts

COLLECTOR

30

5 3

40
40

*b
?l>2

GES6015

BASE

MAX

MIN.

4 32

MILLIMETERS

SYMBOL

= 25C, unless otherwise specified)

(T A

EMITTER

I.

Observe Proper Bias Polarity.

VcEO

Emitter to Base

wide

Voltages

Collector to Base

extremely

Integral Heat Sinks availabl 3 Up to 1

Power Dissipation. Order
GES6015-J1 etc.

ratings:

Collector to Emitter
Collector to Emitter

over

mA

Beta hold-up out to 800

Power Dissipation

Voltage and Current Values for

Linearity

.2

50

3
3

.1

15

2.670 .080

2.0 3

1,3

.05

.10 5

Dissipation

g 25C)
25C) Heatsink
S 25C)
(T A S 25C)
(To & 25C)Heatsink

Total Power (T A
Total Power (T A
Total Power (To

Derate Factor
Derate Factor

Pt
Pt
Pt

.500
.700

.500
.700

Watts
Watts
Watts

REFERENCE
PLAN

Temperature

Storage
Operating

Lead

(Yxq"

-65
-65

Tstg
Tj

%2 "

from

case for 10 sec.)

TL

to
to

+150
+150

C
C

|_260
"

electrical Characteristics:

(T A

STATIC CHARACTERISTICS

Min.

25C, unless otherwise specified)

GES6015
Collector-Emitter

(Io

Emitter-Base
(i E

Max.

TTW

-J

&

Collector-Base

4>b

ioom,

ic

o)

Volts

V(BR)EB0

100,uA, Ie

(Ic=

70

70

Volts

70

70

Volts

= 10mA) f
= 50mA) t

VcE(S A T)
VcE(SAT)

SYMBOL

.300 Volts
.750 Volts

.300
.750

(Ic

100mA,
500mA,

Base-Emitter Voltage

(Vce

5V,

=
IB =
=

10mA)
50mA) f

IB

10mA) t

=
=

(Vce=
(Vce

(Vce=

IV,
IV,
IV,
2V,

Ic
Ic

Ic

=
=
=

Io=

Collector Cutoff Current

(Vob

100 M A)
10mA) t
100mA) f
500mA) f

25V,

Ie

Emitter-Base Reverse Current

(V EB
3.0V, Io

fPulsed, 300 ^sec,

2%

0)

0)

Vbe<s A T)

.70
.80
.55

.95

1.10
.77

.70
.80
.55

.95

1.10
.77

Volts
Volts

<t>*>2

Volts

10

20

120
200
150
75

20

nA

.5

.4

6
3 3
8 2

.0

.0

50 1.39 5

3.550

1.570
12.7

.0

REF.

.40
2

6
6

45
-

.0

.01

05

.1

.0

55

.1

40

REF

62

.5

2.2

1.270

REF.
|3.9 6

.18 7 R

.5

qi
r\

NOTES

4>p

nA

10.1

6.350
.2 50
- .145
3.630
3.960 REF .156 REF.

Li

L2

10

.263

I.I

600

6.6 8

300

MIN. MAX.

.40 7
.4

INCHES

MAX

<M

60
100
75
40

-q

3. 2
2.420 2.660 .095

Forward Current Transfer Ratio

(Voe

MILLIMETERS
MIN,

*b
Vbeisit)

/*

r
EMITTER
BASE
3.C0LLECT0R

2.

Base-Emitter Saturation Voltage

(Ic=

A^
^"

1.

V(BR)CBO

0)

Breakdown Voltage
100 M A, Vbe
0)

100mA, I B
500mA, I B

"

Breakdown Voltage

Collector-Emitter Saturation Voltage

(Ic

<b2

Volts

80

60

Collector-Emitter

(Ic

V(BR)CE0

Max.

Breakdown Voltage

10mA, l:=0)t

11
L^
TT="'u-r

GES6017
Min.

L2

Breakdown Voltage

(Io

Symbol

*- L

mW/C
mW/C

|.l

EF.

56

NOTES:
(THREE LEADS)

tf>b2 APPLIES BETWEEN Li AND L2. ^bAPPLIEJ

BETWEEN L2 a. 5"(I2.70MM) FROM REFERENCE PLANE.
DIAMETER IS UNCONTROLLED IN L, AND BEYOND. 5"(I2.70MM
FROM REFERENCE PLANE.
2.M0UNTIN6 HOLE IS FOR #4 SCREW. HOLE WILL ACCEPT A
.113 (2.87MM) DIAMETER PIN INSERTED PERPENDICULAR
TO THE MOUNTING SURFACE.
I.

duty cycle

'

1260


GES6015, 17
DYNAMIC CHARACTERISTICS
GES6017

GES6015
Forward Current Transfer Ratio

(Ik

=
=

Min.

80

450

160

750

1.5

15

2.5

30

Kohms
iumhos

Typ.

10V,

lKHz)

1mA, Vck=

10V,

lKHz)

h, e

10V,

lKHz)

h e

50

150

Cob

15

15

pF

55

55

PF

Output Conductance
(I K

Max.

1mA, Vcb

Input Impedance

(Ik

Max

Min. Typ.

1mA, Vck

Collector-Base Capacitance

(Vcb

10V,

I i:

Emitter-Base Capacitance
0.5V, Ic
(Vkb

0, f

= 1 MHz)

0, f

Gain Bandwidth Product

(Vce

10V,

IB

MHz)

10mA,

30

MHz)

250

75

fT

MHz

300

100

Noise Figure

Vcb
f

= 5V, I E = 100 M A, BW =
= 10 Hz to lOKHz)

Delay Time

(Vrc

see figure

Rise

Time

30V,

V K (off)
Storage Time

(Vcc
I 2
Fall

Time

Ibi

15mA,

I,

(on)

150mA,

I B1

10

10

35

35

375

450

50

75

15mA,

30V, Ic(on)

150mA,

I B1

15mA,

15mA)

(Vcc=

150mA,

0V)

see figure 2

lm

dB

see figure 2

=
=

NF

=0V)

see figure

(Vrr

R s = 5K,

30V, Ic(on)

V E (off)

15.7KHz,

30V, Ic(on)

150mA, Ibi=

15mA,

15mA)

tf

<2ns

TO OSCILLOSCOPE
t,ilns

R>

TO OSCILLOSCOPE
trains

-tr'^2ns

R,

IOOK

^lOOK

200
V CC - 30V

16V

P.W.

FIGURE

1.

VCC =-30V

> 200ns

DELAY AND

RISE TIME

Cs

EQUIVALENT CIRCUIT

TOTAL SHUNT CAPACITANCE FIXTURE, CONNECTORS, AND PROBE

FIGURE

2.

lOpF

STORAGE AND FALL TIME EQUIVALENT CIRCUIT

GE S60I5
V E--IV

^
LJ
c ES60

^
V

s-ql
\

:
,

\"

"\

III

i
i

-COLLECTOR CURRENT -ni*

BETA VS. COLLECTOR CURRENT

BETA VS. COLLECTOR CURRENT

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. COLLECTOR
CURRENT

1261

'

GES6015, 17

linn

nun

GES60I5, GES60I7

jx

hi-H- W=T TW

ET

1:^_

__

__[.
]

'
!

'

TIT

60
oi 6

Jp j

_i|

--U

4-~ lif

ii

T
,

KT

---

'
1

_j
1

!::.

!
:
i

/w

i^^i

;n
Ii

Xi%^

'

3p

=r-

=^

==

f-

11-S_

:25Ec_

:::^
!'''

it

-H4f-

'

BASE-EMITTER SATURATION VOLTAGE

-j~-rtf

|
r^

^sc~

iiiil'i
III'!

COLLECTOR CURRENT

VS.

i'iiiil

GES60l5mr-

GES60I7

!
!

i^

Tr

ir

:- = :

ES
i

v
=-

-(--

F#t

'^\~~
11

-*

i;

j
-p

tr
-4+

--

L. j_.

4r

|-

*-

li_

ii

ii

/
/S.

T
T
j

'st^y'.

T
'

TRANSCONDUCTANCE

VS.

COLLECTOR

CURRENT

=1

=^
~~

^^

-"

25" L
,

,-c
"

55 c

tt

l~i

'

'

lJ
-PO

[[

-10

I c - COLLECTOR

-(00

ill

GES60IS,GES60I?

i_

-1001

COLLECTOR-EMITTER SATURATION

VOLTAGE

11

COLLECTOR CURRENT

S6C 5

II

|||

VS.

1!

5(

I
'

II

I IT

1
[

.
|

1
I

<^

"<^

Hi
1

rSiU fegp"

*-

..,

III

mumt4 0ES60I5
i

tt

^i

:o LLEC roR -EN MTT ER 5A1 URA no N

/o LTAC E \fS. BA >E (:uf 1REN1 r

<

TEMPERATURE COEFFICIENTS VS.

COLLECTOR CURRENT

5i.

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

VOLTAGE

~i

0ES60I7
Mil

UCE"
V.-5W,

SVT

T
j

W^

\ E-JV-'

'/,
Til

--^_-

IC-30^

1--r

WTCE

vrr- i.vJ

Th
1

XjH

i
i

Ii

GAIN BAND WIDTH PRODUCT

COLLECTOR CURRENT

VS.

It

u
Ii

GAIN BAND WIDTH PRODUCT

CURRENT CURRENT

VS.

COLLECTOR-BASE & EMITTER-BASE

CAPACITANCE VS. REVERSE BIAS

VOLTAGE

1262

GES6015, 17

\
!

'

\<-

"^ \

't,
,

GES60I5

\V

ff

**

\\

f-

f.

N^

^\

qOV*

'.

2
iff-

';
:

-''

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

GES60I7
...

,/

'

s-c

Ta=25*C

Vce*-5V0LT5

uW& f/
//
c

}/

10

|||
-GES60I7

J4||

.*? r

>/

E*

__._

...

ft ft,

1=^4i

'2

-f

ff-^rf'-'- n.

^^i

a
-

*t=&*---,;i

COLLECTOR CHARACTERISTICS

Tt

t c - COLLECTOR

JRRENT-

CURRENT-mA

I e - COLLECTOR

inA

GES60I5 .GES60I7
v CE -'v

g^

&

COLLECTOR CURRENT

VS.

&

VS.

COLLECTOR CURRENT

'

-IO m A_

13

=
J
i,

"I

\\

<

/:

^j

>

'V

*/

ZL

iS60IS

/
a>

-Pi

/\

1/

'

t>
i

P<^'

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. AMBIENT
TEMPERATURE

TTf

f^

>f

sy
Nj,

Si

*/

>

^^.N

^s
r

&>

>N.

'

11

'

'

_l^

MM-

-OHMS

5ISTANCE

NOISE FIGURE VS. SOURCE RESISTANCE

NOISE FIGURE VS. SOURCE RESISTANCE

ce'"

.^
.

IS-

/
I

.f
^

GES60I3.GES60I7

//

"

^T

"

S.

BIENT TEMPERATURE

\\

'

13

VI
\-J

""""V

/
,.

Mi

l/l

'

//

E^E

!5v

s^
rr

te

[_i

inn

l!i

GES60I5

III

VCE*" S

!
j

14

:
i

'

:
I

'"

\
m

== ==

"

lu

f \,

Nn

t^-7~

Ss.
S.J

^^
,

""""^-^L.
,

04mAIOK^20

t
-OlmA 60KO

" ~ as f

~^^|^

\[

[-

~^*-

r ImA 9KB
/

~^~~i~~~H

rt^=ff

/04 m a ?S

5*a

"

Tr

_- -*iTiAKirp -

J?* 1m

"Yty]

'

'

(- FREQUENCY- Hi

COLLECTOR-BASE CUTOFF CURRENT VS.

AMBIENT TEMPERATURE

NOISE FIGURE VS. FREQUENCY

1263

NOISE FIGURE VS. FREQUENCY

Silicon

Transistors

GES6014
GES6016

The General Electric GES6014 and GES6016 devices are silicon, NPN, planar epitaxial
passivated transistors designed primarily for high current linear amplifiers or medium
speed switching circuits and are especially suited for industrial control applications.
Complementary PNP versions of these types are available and are designated as

GES6015 and GES6017

respectively.

Features

Epoxy encapsulation with proved

Excellent Beta Linearity over extremely wide

reliability.

Performance

comparable to hermetic units

excellent characteristic stability under environmental stresses 85C 5% Relative Humidity.
500
Power Dissipation.

current ranges.

Beta hold-up out to 800 mA.

60 Volt V<br)cko ratings.
Integral Heat Sinks available Up to 1
Power Dissipation. Order as GES6014-J1

mw

maximum

absolute

ratings:

(t a

= 25c, unless otherwise specified)

V CEO
V CES

Collector to Emitter
Collector to Emitter

Emitter to Base
Collector to Base

60
70

Vebo

V CBO

SYMBOL

GES6016

GES6014

Voltages

TO-92

W
etc.

60
70

70

70

mA
mA

800

800
fisec,

1500

1500

< 25C
Derating Factor T > 25C
Total Power T < 25C Heatsink
Total Power T < 25C Heatsink
Derating Factor T > 25C Heatsink
Derating Factor T > 25C Heatsink
TA

Pt

.500

.625
1.0

1.0

5
8

.500
4
.625

Pt
Pt

.2

80

241

L2

Watts

48

02 2

6
6

.0

.125

.1

.09 5

4.32

12.700

45

.0

1.3

65
5

.0

55

.13 5 .170

00
-

.5

1.270

6.350

2.920
12.030 2.670

NOTES

10

75 20 5

.1

90

4.1

3.4 3

.0

2.670

50 139

I.I

.0

5200

55

7
7

.4

Dissipation

Total Power

.17

5 3 3

44

*D

<M

Collector
Collector (peak, pulsed 10
2% duty cycle)

MAX.

32

.4

*b2

Current

MIN.

*b

Volts
Volts
Volts
Volts

INCHES

MILLIMETERS
MAX.

MIN.

.1

50

.2

1,3

.05

80

.10 5

mW/C
Watts
Watts

REFERENCE

mW/C
mW/C

Temperature

Storage
Operating

Lead

(Via"

T.STG

H2

- +260

electrical Characteristics:
STATIC CHARACTERISTICS
(Io

(Ie

=
=

100mA,

Max.

Max.

Min.

IB

0)f

60

60

Volts

Ic

0)

Volts

V<B

Breakdown Voltage

lOO^A,

Collector-Emitter

(Ic

Min.

specified!

Breakdown Voltage

Collector-Base

(Ic

Symbol

(T A = 25C, unless otherwise

GES6014
GES6016

Breakdown Voltage

10mA,

Emitter-Base

-+C
-^C

from

case for 10 sec.)

Collector-Emitter

+150
+150

-65 to
-65 to

'

Tj
"

IE

0)

V(B

70

70

Volts

Vo

70

70

Volts

Breakdown Voltage

100 M A, Vbe

0)

TO -92

Collector-Emitter Saturation Voltage

= 100mA, I B = 10mA)
= 500mA, I B = 50mA) f
Base-Emitter Saturation Voltage
(Ic = 100mA, I B = 10mA) f
(Ic = 500mA, I B = 50mA) f
(Ic

VCE(SAT)

(I,-

VcE(SAT>

Base-Emitter Voltage
(V C e
5V, l c =z

VBE(SAT)

VbE(SAT)

.150
.500
.70
.80

.88
1.0

.70
.80

.55

.75

.55

Volts
Volts

SYMBOL

.88
1.0

Volts
Volts

*b

.4

4>b2

.4

A
S

C
e

10mA) f

0.75 Volts

ei

Forward Current Transfer Ratio

= IV, Ic = 100M)
(V CE = IV, I c = 10mA) t
(V C e = IV, Ic = 100mA) t
(Vce = 2V, Ic - 500mA) t

(Vce

hpE
IIfe

h FE
hK

45
100
85
20

300

70
200
170
20

(Vcb

= 25V, I B = 0)

10

f Pulsed, 300/xsec,

=
g 2%

10

nA

20

duty cycle

nA

NOTES:
(THREE LEADS)

6.6 8
6 O
.5 3 3
.4 8 2
3. 2
O

10.

INCHES
NOTES
MAX.
.263

MIN.

.0

.0

.400
6
6

.0
.0

2
1

- .5 2
2.420 2.660 .09 5 .105
I.I 50
1.395 .0 4 5 .0 5 5
1

3550
REF.

Li

6.350

<t>p

3.96

qi

2.2

r\

20

L2

500

MAX.

MIN.

1.570
12.700
-

Collector Cutoff Current

Emitter-Base Reverse Current

(V EB
3.0V, Ic
0)

MILLIMETERS

.150
.500

.0

.1

40

6 2 REF

.5

.0 5
50
- .145
3.630
REF.
.156 REF.
1.2

O
|

.2

REF. .18 7 R EF.

56
96 O

3.

|.l

,Sb2 APPLIES BETWEEN L| AND L2. <fcb APPLIES

BETWEEN l_2 a .5"(I2.70MM) FROM REFERENCE PLANE.
DIAMETER IS UNCONTROLLED IN Li AND BEYOND. 5"(I2.70MM
FROM REFERENCE PLANE.
2.M0UNTING HOLE IS FOR #4 SCREW. HOLE WILL ACCEPT A
.113'(2.87MM) DIAMETER PIN INSERTED PERPENDICULAR
TO THE MOUNTING SURFACE.
I.

1264

GES6014, 16
GES6014

DYNAMIC CHARACTERISTICS
Symbol

GES60 16
Typ. Max

Min. Typ. Max.

Min.

Forward Current Transfer Ratio

(I E

1mA, Vce

Input Impedance

(Ie

1mA, Vce

Output Conductance

(Ie=

1mA, Vce

10V, f

lKHz)

h, e

65

450

130

750

10V, f

lKHz)

h,e

1.5

12

2.5

20

Kohms

10V,

lKHz)

hoe

45

170

umhos

Cob

10

10

pF

Ceb

50

45

pF

Collector-Base Capacitance
10V, I E
(Vcb
0, f

Emitter-Base Capacitance
0.5V, Ic
0, f
(Veb

MHz)

= 1 MHz)

Gain Bandwidth Product

(V C e

10V,

IE

10mA,

30

MHz)

Noise Figure

= 5V, I E = 100 M A, BW =
= 10 Hz to lOKHz)

(Vce
f

See Figure
(Vce = 30V, Ic(on) = 150mA,
Time See Figure
(Vce = 30V, Ic(on) = 150mA,
Storage Time See Figure 2
(Vce = 30V, Ic(on) = 150mA,
Time See Figure 2
- 150mA,

Delay Time

15.7KHz,

425

135

MHz

5Kfi,

NF

dB

I Bi

15mA,

V BE (off) -

0V)

12

12

nsec

Ii

15mA,

V BE (off) =

0V)

tr

25

25

nsec

I B,

15mA,

I=

15mA)

300

350

nsec

I BI

15mA,

I B2

15mA)

t,

100

150

nsec

Rise

Fall

(Vce

Rs =

335

105

fT

30V, Ic(on)

*
DUTY CYCLE
RW.

2%

TO OSCILLOSCOPE
t

<

Ins

R,>IOOK OHMS

> 200ns
TO OSCILLOSCOPE

Ins
tr
Ri >. IOOK

OHMS
V C C'30V

200

V CC =30V

FIGURE

1.

DELAY AND

RISE TIME

Cs

TOTAL SHUNT CAPACITANCE

FIGURE

EQUIVALENT CIRCUIT

2.

FIXTURE, CONNECTORS

AND PR0BE= lOpF

STORAGE AND FALL TIME EQUIVALENT CIRCUIT

Trm

I
BETA VS. COLLECTOR CURRENT

BETA VS. COLLECTOR CURRENT

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. COLLECTOR
CURRENT

1265

GES6014, 16

III

IN

Mill

III

GES60l4,GES60i6
!

|||

GES60H

::f_

\4

_r_r

h-

"

t-

41

III

'11

/
-

*T~"

\ _a6'

--

-7--

^t-

a...

__

--UA--__L.

T'"~r-

ht~
W

_-

ij

-Ltifn

||

-*--

BASE-EMITTER SATURATION VOLTAGE

^7

COLLECTOR CURRENT

VS.

tl
1

711

tP

f|

*
i

ill

7T+~~

111

CES60I4 , GES60I
1-4-1

fffT

J'HH^

-'

-I--

SES60! b

--^

--

7'

=T

7Jf=

.,..!,

/.:

rrnr

-t-

^ff"
-,
..

r*--^.

~*-z

**

if n|

**

'$&'

nrp

111

ii

III

TRANSCONDUCTANCE
i

-*

....

._

fiii

__-

'

----

>

77*

--

VS.

COLLECTOR

CURRENT

__:

__->^3 = _

-riiii

ill]

71

ll

III

II

[L

,'"'

I'iIi

GES60I4
GES60I6

COLLECTOR-EMITTER SATURATION

VOLTAGE

l|

COLLECTOR CURRENT

VS.

Tfi -5. CTC I2VC

.EISA.)

[L
|

i*& ,5^

.J

BE

||||

"
tin

ii

TTJ

llll

ill

I
Tflil

mil

|GES60I4|||||

III

lllfll

X, -COLLECTOR CURRENT -m.

'!:

TEMPERATURE COEFFICIENTS
COLLECTOR CURRENT

tn

VS.

Tfl
Tjj

fy

i
if

-tt.

3^j

fc^Q

-itt
ioi

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

COLLECTOR-EMITTER SATURATION
VS. BASE CURRENT

VOLTAGE

J.90
-70

-60

VOLTAGE

C.b

c.b<

M -

ZZ

GES

3011

10

ioi

._
.

_u_3_

~^"^

0-

K-i-t: -T-+

5.1^ ^==_tg;

ilk-i

tY"

e|:=

III

't

7
^t

tit

G ES6 314

= GES60

-=L=J_::

-41

l-f

T'

:
j

.1

50
40

^^

____EEE

-=7

ES

3ES60I

ii.

-l_L__L.il.

GAINBANDWIDTH PRODUCT VS.

COLLECTOR CURRENT

COLLECTOR BASE TIME CONSTANT VS.

COLLECTOR CURRENT

1266

COLLECTOR-BASE & EMITTER-BASE

VS. REVERSE BIAS

CAPACITANCE
VOLTAGE

'

'

GES6014, 16
[

2O0a

GES60I4

iaoA

'

fl

.0.

/p
~~

Mil

Ml

L^-^iZ0nA
FBEOJENCY-^.iOH.

<LlVALENT8W..7l

80A

'

v\

fer

'

'

r~

--.&

/,

~z^

$
j

,,-;

<^""
-ft**'

V
1

If

||

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

NOISE FIGURE-WIDEBAND VS. SOURCE

RESISTANCE

//

r>

*zZ?*Zy'

T-&*V",

^<

GE S60 16

"VJ.

'

--"

^-

'

,"

/ /

\^
+<'

lB-0

CE* 5
1

In

-tt

/ 'l

SSc*_,

JGES60I6

GES60I4

^ ^ /J

11

^-4f
.Sj
-

A..

ff

^ ^

33

'

o*

St^==rIkh?

s' Tr*

COLLECTOR CHARACTERISTICS

'

^-

S
I

N^j

=W

?h7T

OKI.!

^E = E

uil

IOOKHr

]_

<^-

-\-~

~[T

^
i<f

i--

-=^ Qi-vc-j

'

^
F

/X-* '

ill

/Sy .-***&'
Ur
/> 6^T^f
< 50 J
.""

m,

&

'

VS.

COLLECTOR CURRENT

&

VS.

COLLECTOR CURRENT

,.

Q
*

GES60I6

GES60I4^

.
I

SJ

KHf

"
f

">

/
T 4 -*1llBIENT

60
90
TEMPERATURE -C

J/~

//

*/
if

'

*U

*Y~

^^

X
\^\.

120

NORMALIZED FORWARD CURRENT

TRANSFER RATIO VS. AMBIENT
TEMPERATURE

-?

Ov
"

^
s,

r,

-^

i-L

A-'5i_

NOISE FIGURE VS. SOURCE RESISTANCE

NOISE FIGURE VS. SOURCE RESISTANCE

SES6 014

SES60I6

r
i+A

GES60 *

a -25'C

'& VV*

hF

V"
\

GPftfi
VCE''

ta

?a

;
j

^t1

NL*

sN.

TEMPERATURE

1!

-i-\~

VS.

fp^t
""%?

4- j

X..
Nl, !~&o
o

T-

---^^

f?=

- C

COLLECTOR-BASE CUTOFF CURRENT

AMBIENT TEMPERATURE

"fs?<

'^SC*

^a^^Z
1

"S

"

^""-^i$>-*.

TA -AWBIENT

IS*

NOISE FIGURE VS. FREQUENCY

1267

-I

"
oS

NOISE FIGURE VS. FREQUENCY

Silicon

Signal Transistor

The General

GES6218, GES6219, GES6220 and GES6221

Electric

are

GES6218.19
GES6220,21
1

NPN Epoxy

Encapsulated Transistors. The device is intended primarily

for use in television, nixie-neon tube and other general high voltage

jt

~Q ~~ L2

applications.

L.

SEATING PLANE

FEATURES:

EMITTER
BASE

3.

COLLECTOR

I.

TO-92

Epoxy encapsulation with proved

Performance comparable to hermetic units - excellent characteristics stability under environmental stresses 85C-85%
relative humidity.

reliability.

500 mW power

Excellent beta linearity over extremely wide current ranges.

V BVCEO

300

Integral heat sinks available

*b

.4

40

4>D

3.

2.41

up to 625

mW

power

dissipation.

.17

.2

.55

OJ

50 139

1.1

absolute

maximum

ratings:

(25C unless otherwise specified)

.0

05i

.1

.045

.0 5 5
.13 5 ^.170

.50q1

- .050

.2 50

.1

2.670 .080

2.0 3

19

.125 .16 5

1.270

6.3 5

2 2
.0

.09 5

12.700

6
6

NC

75 .205

.1

4.32

2.920
s

8 2

20

4.1 9
2.67

3.4 3

L|

L2

MAX.

5.3 3

5.

80

INCHES
MIN.

.4

4.4 5

e
e1

ratings available.

4.3 2

*b2

dissipation.

MILLIMETERS
MIN.
MAX.

SYMBOL

.10 5

NOTES:
(THREE LEADS)

^>b2 APPLIES BETWEEN L( AND L2. <f>bM

BETWEEN Lga .5 "(12.70 MM) FROM REFERENCE PLANE.
DIAMETER IS UNCONTROLLED IN Li AND BEYOND. 5"(I2.7C
FROM REFERENCE PLANE.
2.M0UNTING HOLE IS FOR #4 SCREW. HOLE WILL ACCEI
.113 (2.87MM) DIAMETER PIN INSERTED PERPENDICUL
TO THE MOUNTING SURFACE.
I.

GES6218GES6219GES6220GES6221

Voltages
Collector to emitter

Emitter to base

EBO

Collector to base

300

250

200

5 Volts

300

250

200

150 Volts

50

50

50

150 Volts

Current
Collector

I,

50

mA

SYMBOL

MILLIMETERS

< 25C
Derating Factor T A > 25C

Total Power

TA

PT

T A <25C*
PT
Derating Factor T A >25C*
Total Power T r
Pt
Total Power

^"C

Derating Factor

T c >25C*

.500

.500

500

.500 Watts

.625

.625

625

1.0

1.0

1.0

1.0

.625 Watts

mW/C

mW/C
Watts

mW/C

Storage

Operating

-65 to

Tj

-65 to

+150
+150

C
c

.5

3 3

4>bz

.4

.4

8 2 .0

+260

T,

*Heatsink

electrical characteristics:

(25C unless otherwise specified)

GES6218 GES6219 GES6220 GES6221
Min.

Min.

Min.

300

250

200

150

Volts

Volts

Min.

STATIC CHARACTERISTICS
Collector- Emitter Breakdown Voltage

=lmA,

=0)
Emitter- Base Breakdown Voltage
(Ie = 100uA, I c =0)
(I c

V (BR)CE0

V (B r)ebo

1268

.0

.400
6

.0

.0

3. 2
2.420 2.660 .095

ei

I.I

F
h

L
L1

L2

50

1.39 5 .0 4 5
3.5 5

1.570 REF.
12.700

1.270

50

6.3

3.9 6

qi

2.2

REF.

REF.

3 96

.5

.10 5
.0

55

.1

40

6 2 REF

.5

.2 50
-

3.63

.0

.145

5 6 REF.
.18 7 R EF.
56

|.l

REFERENCE

Lead (1/16" 1/32" from

case for 10 sec.)

.4

ri

T
1

10.1

<*>b

<t>P

Temperature

MIN.

6.6 8

Dissipation

INCHES
MAX.
.263

MAX.

MIN.

STATIC CHARACTERISTICS CONT'D.

Min.

V(BR)CBO

300

Max.

Max.

Min.

GES6221

GES6220

GES6219

GES6218
Symbol

Min.

Max.

GES6218, 19

Max.

Min.

GES6220, 21

Breakdown Voltage
(I c = 100uA, I E =0)

Collector- Base

200

250

Volts

150

Collector Cutoff Current

(V CB
(V CB
(V CB
(V CB

=250V,I E
=200V, I E
=150V, I E
=100V,I E

=0)
=0)
=0)
=0)

uA
uA
uA
uA

0.50

IcBO

1.0

IcBO

1.0

IcBO

10

IcBO

Forward Current Transfer Ratio

(V CE =10V,

Ic

= 10V,

(V CE =10V,

(V CE

=2mA)
=20mA)

h FE

10

10

10

10

h FE t

20

20

20

20

=20mA)

V BE

c
Base- Emitter Voltage

0.55

0.75

0.3

1.0

0.55 0.75

0.55

0.75

0.55 0.75

Volts

Collector- Emitter Saturation Voltage

(I c

= 10mA,

=10mA,
(I c =20mA,
(I c =20mA,

(I c

= lmA)
= lmA)

'

=2mA)
=2mA)

IB

CE(sat)

Volts
0.3

^CE(sat)!

Volts

1.0

0.3

CE(sat)

CE(sat)

Volts

2.0
0.3

Volts

2.3

Base- Emitter Saturation Voltage

= 10mA,
(I c = 10mA,

= lmA)
=
lmA)
IB

V B E(sat)t

=20mA,
(I c =20mA,

=2mA)
I B =2mA)

VBE(sat)t

(I c

(I c

VfiEfsattt

unless otherwise specified)

h fe

Min.

Max.

20

300

=20mA, f=lKHz)

Collector Base Capacitance

(V CB =10V,

Volts

0.65 0.85

Forward Current Transfer Ratio

I

Volts

0.65 0.86

DYNAMIC CHARACTERISTICS (Ta=25C

(V CE =10V,

Volts

0.60 0.75

VBE(sat)t

IB

Volts

0.60 0.75

C Cb

PF

C eb

70

pF

=0, f=lMHz)

Emitter Base Capacitance

(V EB =0.5V, I c =0, f=lMHz)

Magnitude of Forward Current
Transfer Ratio

(Ic

Turn

dB

hfe

c = 10mA,
Gain Bandwidth Product

(V CE =10V,

f=20MHz)

MHz

50

fx

= 10mA, Vce =10V, f=20MHz)

On Time

(See Figure

toN

1)

0.5

usee.

5.0

usee.

(V cc =150V, Vbb =30V, V IN =5V.

I c =20mA, I B1 =I B2 =2. 75mA)
Turn Off Time (See Figure

1)

FF

(Vcc =150V, Vbb =30V, V, N =5V,

=I B2 =2. 75mA)
I c =20mA, I B
,

//

10
4

t Puke

Width

< 300 us,

Duty Cycle

t
o

< 2%.

//
//

'/

LU

v/

>
z

Cj-

aw

/o^'

*y

\
~-J

-60**SEG-

f Y\
VJV/

TO OSCtLLOS

UilOijSEC
I

RL^IOOKXl

|7.5K

rZ
/
//'

s
s

o
u

/ /

<

^ -

>^

>V
<&

<

A\t r

< IO17SEC

-COLLECTOR CURRENT -mA

tfilO^SEC

SWITCHING-ON AND OFF TIME EQUIVALENT CIRCUIT

1269

COLLECTOR- EMITTER SATURATION VOLTAGE

VS. COLLECTOR CURRENT

GES6218 19
GES6220, 21
'

,-c^

oM
-

25"

^Ct.

\OM

NV

<
a:

*25*
S

\\
"S

.5M

<
Met

\
V

-*"

-c***

ALLOWABLE POWER DISSIPATION

WITH HEATSINK
(TC- REFERENCE TEMP.)

.7

+^~^

io

<
*

\\

o:

1
l

i-

S
a
a:
w
o
a.

FREE AIR POWER DISSIPATION^

(TA = REFERENCE TEMP.)

-COLLECTOR CURRENT-mA

FORWARD CURRENT TRANSFER

COLLECTOR CURRENT

VS.

-60

-55"C, VCE

OV

PERMISSIBLE

^*

DC POWER DISSIPATION

C. V CE =I

vc E = 100 VOLTS

.5

^CT^CE

S
3

140

*-r^-

or

120

Vf 1 5V
s

20
40
60
80
90
100
TC OR TA REFERENCE TEMPERATURE -C

-20

MAXIMUM

-40

IOV

z_

>

/
/
IC -

COLLECTOR CURRENT

BASE- EMITTER VOLTAGE VS.

COLLECTOR CURRENT

-5 5 -C,l C -_lB^___

*=* "'
2

5'C

IC

25C. IC

'

'

"o

//

zrrh^T
r

TA -AMBIENT TEMPERATURE -C

COLLECTOR CUT-OFF CURRENT

1

COLLECTOR CURRENT

TEMPERATURE

Tj
l

VS.

25- C

mA
'

BASE- EMITTER SATURATION

VS.

VOLTAGE

COLLECTOR CURRENT
E

UJ

TH 25C

tr
a:

10

^_ ;"
^^
"

fT.

"^c cb

16

^^-^'rio*

=__

*"^i^eoA'

-q

22 * "*

VCE

'^fc

COLLECTOR VOLTAGE - VOLTS

VCE

COLLECTOR -BASE CAPACITANCE AND EMITTER.

BASE CAPACITANCE VS. REVERSE VOLTAGE

COLLECTOR TO EMITTER VOLTAGE

VOLTS

CONTOURS OF CONSTANT GAIN BANDWIDTH

PRODUCT
1270

150

C C

GET Series See GES

Equivalent

Silicon

Signal Transistors

These Silicon Planar Passivated Epitaxial Transistors are

GES6222
GES6224

in-

tended to satisfy a broad range of general purpose signal level

applications at audio and intermediate frequencies.

FEATURES:

Excellent gain linearity

20

tion in the IOjuA to

particularly designed for opera-

mA

range.
-

Low

60

Epoxy encapsulation with proven

collector saturation voltage.

VBR(CEO)

volt

characteristic stability

reliability

under environmental

i^U

excellent

stresses

85 C

Low

T0-92

ratings: (T A = 25C unless otherwise specified)

Voltages

Vceo
Vcbo
Vebo

Collector to Emitter

Collector to Base

Emitter to Base

*b

.4

.4

<*>D

4.4 5

Ic

3.

2.4I

Volts

ei

Volts

L2

mA

Dissipation

<

Derating Factor

TA

25

> 25

PT
PT

360

mW

2.88

mW/

1.

Storage

Lead Soldering (1/16" 1/32"

from case for 10 sec max.)

T
T
T

electrical characteristics: (TA = 25

+150 C
+150 C
+260
c

-65 to

(VCB = 60V, I E = 0)

= 100 mA,

VCE

= 5V)

.0

.0

22
9
1

1.3

.1

.1

395

4.3 2

.09 5
5
.0 4 5 .0 5 5
3 5 .170
.1

.1

.5

30 2.67

.2

00
50

.05

5
.080 .10 5
.1

1,3

3
3
2

THREE LEADS
(THREE LEADS) b2 APPLIES BETWEEN L) ANDLg.
b APPLIES BETWEEN L2 AND 12 .70 MM (.500")
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 1.500")
FROM SEATING PLANE.

ICBO

50

nA

Iebo

50

nA

Emitter Base Leadage Current

= 5V)

6
6

75 .205
90 .12 5 65

2.67
1.

MAX.

Collector Base Leadage Current

=2mA,VCE

.0

NOTES

MIN.

SYMBOL

(VEB = 5V, I c = 0)
Forward Current Transfer Ratio
(I c = 10 /iA, VCE = 5V)

4.

.0

(.270

6.3 5
2.0

5.2

8 2

MAX.
10

.2

unless otherwise specified)

Static Characteristics

h FE
hFE

GES6222
GES6224
GES6222
GES6224
GES6222
GES6224

20
40
75
150

200
300

20
40

V(BR)CEO

60

V(BR)CBO

60

hFE
h FE
hFE
h FE

Collector-Emitter Breakdown Voltage

(I c = 10mA,I B =0)
(I c

12.700

.4

.17

THIS SIDE.

-65 to

50

I.I

3.4 3

.5 5

INCHES
MIN.

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

3.

Collector-Base

NOTES:

Temperature
Operating

2.92
s

TA

80

Volts

100

5.3 3

^b2

L|

Collector (Continuous)

(I c

4.3 2

60
60

Current

(I c

MILLIMETERS
MIN.
MAX.

SYMBOL

maximum

Total Power

-E

BASE
1. EMITTER

2.

capacitance.

absolute

~l

SEATING PLANE 3 COLLECTOR

- 85% RH.

AD

-1L _ii

NT.^tgNJ-^b

rating.

z-

UNITS

I
Volts

Breakdown Voltage.

= 100/uA,

E =0)
1271

Volts

GES62222, 24
SYMBOL

Static Characteristics (continued)

MAX.

MIN.

UNITS

Emitter-Base Breakdown Voltage

(I c = 100/iA, I c = 0)
Base-Emitter Voltage
(I c

2mA, VCE

v,(BR)EBO

= 5V)

Volts

VBE(on
BE(on)

0.5

0.9

Volts

GES6222, GES6224

V,CE(sat)

0.020

0.125

Volts

GES6222, GES6224

V,BE(sat)

.78

Volts

GES6222
GES6224

hfe

Collector-Emitter Saturation Voltage

(I c

= 10 mA,

B =

1mA)

Base-Emitter Saturation Voltage

(I c

= 10 mA,

B =

mA)

Dynamic Characteristics
Forward Current Transfer Ratio
flc =2mA, VCE = 5V, f = 1 kHz)

300
400

75
150

hfe

Collector-Base Capacitance

(VCB = 10V, I E =

0, f

MHz)

Cc b

PF

280

TA

O 240

VCE"

GES6222
GES6224

200

25*C

5V

<
TA

160

25*C

Ul
n:

U
Q

120

CE

i
K
O
U.

80

S-r

40

.01

.02

.05

.5

.2
I

- COLLECTOR CURRENT-

mA

FORWARD CURRENT TRANSFER

VS. COLLECTOR CURRENT

RATIO

1272

10

20

SO

100

GES6222, 24

TYPICAL ELECTRICAL CHARACTERISTICS

VOLTAGE EMITTER TO BASE- VOLTS

15

10

20

25

COLLECTOR TO BASE-VOLTS

XB VOLTAGE
CAPACITANCE

VS.

VOLTAGE

o o O o

i-

o
N

^r J-Ei-t
ttt TT

IT

<f

id

ffl

GES6224

ill-

-f

fflr

\J

TO jjj
UWA v
HH-S
zsxH
Y[\

lk\\

-COLLECTOR CURRENT

III'

\\\

W
iMkV
\
1

\W
i

01

1
II

[!

144

002

081

091

ll

ll'l

021

lilt

oD

o
001

tjt

GES6222

.02

.05

.2

.1

mA

.5

COLLECTOR CURRENT

^_

"

'-'
I

10

30

mA

GES6224

GES6222

1273

From General Electric

NewOptoelec
nn
inual
NEW
..

192 page Manual written by General

Electric Application Engineers contains 7

Copies are available from any authorized

GE distributor, GE OEM

basic sections of practical user oriented

information relating to Emitters, Detectors

Components Sales

Electronic

by sending
$3.00 plus applicable tax to General
Electric, Semiconductor Products
Department, Electronics Park, Bldg. 7-49,
Syracuse, New York 13201.

& Couplers
Theory
System Design

Office, or

Reliability

Europe send 1.50

Measurements

In

Circuits

Louth, Dundalk, Republic of Ireland.

Symbols & Terms

to

GENERALS

Specifications

1274

ETC, County

ELECTRIC

Photon Coupled Isolator H11A1-H11A2

Ga As

Infrared Emitting Diode

& NPN

Silicon Photo-Transistor

*-

NOTE!

The General

Electric

H11A1 and H11A2

~1

are gallium arsenide

infrared emitting diodes coupled with a silicon photo-transistor in

maximum

\^

ratings: (25C)

3
.30 C

(TOP VIEW)

4
6
JJ, J_L J_k

.3

.0

E
F

.340
6 .0 2C
.20C

.0

G
H

.0

9C

.0

.100

MICJ,

.01

MAX.

18.89

REE
B.64

.406

50

3
6

5.0 8
.07 C 1.0
1.78
.1
C 2 28
2 79
.08 5
2.1 6
.0
2 .2 03
.305
2.5 4
5
5

.3

.375

00

INFRARED EMITTING DIODE

REE

MILLIMETER
8.3 8
7. 6 2

H"h--H-

.3

B
C

1#

a dual in-line package.

absolute

i-rrr tt
3

INCH
MAX.

SYMBOL

.1

.225 .280

9 53

.18 5 2.54
5.7
1

.47

7.12

NOTES:

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width 1 ^sec 300 P

1.

100
60

milliwatts

2. Installed position

ampere

4.

volts

lead centers.
Overall installed dimension.
These measurements ore irn6f 'rnm the sen
ing plane.

5.

Ps)

Reverse Voltage
*Derate

milliamps

3.

There sholl be a permanent indication of term

nai orientation in trie quadrant adjacent to

Four places.

TOTAL DEVICE

1.33mW/C above 25 C ambient

Storage Temperature -55 to 150C
Operating Temperature -55 to 100

PHOTO-TRANSISTOR

Lead Soldering Time

**150
30
70

Power Dissipation

VCEO
Vcbo
Veco

**Derate 2.0mW/

C above

25

C
260 C) 10 seconds

Surge Isolation Voltage (Input to Output).

milliwatts
volts

HUM

volts

H11A2

1770V (RMS)
1060V (RMS)

2500V (peak)
1500V (pe ak)

Steady-State Isolation Voltage (Input to Output).

volts

100

Collector Current (Continuous)

(at

milliamps

H11A1
H11A2

C ambient

1060V (RMS )
660V (RMS)

1500V (peak)

950V (peak)

individual electrical characteristics (25C)

INFRARED EMITTING DIODE

Forward Voltage
(I F = 10 mA)

coupled
DC

MAX.

1.1

1.5

Reverse Current
(V R = 3 V)

Capacitance
(V = 0,f =

TYP.

microamps

50

Breakdown VoltageV( BR )c F o
(I c = 10mA, I F = 0)
Breakdown Voltage-VV BR )CBO
(I c = 100m A, I F = O)
Breakdown Voltage V(BR ) E co
(I E = 100/uA, I F = O)
Collector Dark Current Iceo
(V CE =10V,I F = O)

volts

10

picofarads

Capacitance

UNITS

30

volts

70

volts

volts

50

nanoamps

picofarads

(V CE = 10V,f=lMHz)

MHz)

electrical characteristics

Current Transfer Ratio

MIN. TYP. MAX.

PHOTO-TRANSISTOR

UNITS

(I F

= 10mA,

V CE

(25C)
H11A1
H11A2

= 10V)

Saturation Voltage - Collector to Emitter (I F = 10mA, I c = 0.5mA)

Isolation Resistance (Input to Output Voltage = 500V DC )
Input to Output Capacitance (Input to Output Voltage = 0,f = 1MHz)

MIN.

TYP.

MAX.

50
20

0.1

0.4

gigaohms

picofarads

300

microseconds
nanoseconds

100

UNITS

%
%
volts

Switching Speeds:
Rise/Fall
Rise/Fall

Time (VCE = 10V, I CE = 2mA,

Time (V CB = 10V, I CB = 50/xA,

RL
RL

= 100 ST)
= 100ft)

1275

H11A1, H11A2

TYPICAL CHARACTERISTICS

;:

eee::

..=^

F = 20mA

Ip'IOmA

*^~~

NORMALIZED TO

--:!::
T"~

=*
~h

F =5mA

/
NORMALIZED T 3vCE = io V
I F = IOm

4
I

TA = 25' C

CURRENT

INPUT

TA -AM6IENT TEMPERATURE- C

OUTPUT CURRENT VS TEMPERATURE

OUTPUT CURRENT VS INPUT CURRENT

V
|

If
50mA

IF

KDmA

IF

100

t
/
E

4
\~h

in

tr

/,

Ol

//
/ //
VCE

/
/

001 L

VF

-f-

/,

NO RMALIZED TO

//

v ce

rF

iOmA

iov

COLLECTOR TO EMITTER VOLTAGE - VOLTS

OUTPUT CHARACTERISTICS

FORWARD VOLTAGE

VOLTS

INPUT CHARACTERISTICS

=^-

^
NORMALIZE

fi

if

V CE *IOVOLTS

'off

3 c><:

RL

io

VCB

OV

ICE0=2"A
'or

/
a

lOOfl
1

1
1

'CEO

OUTPUT CURRENT

mA
If- INPUT CURRENT- mA

SWITCHING TIMES VS OUTPUT CURRENT

OUTPUT CURRENT
CBQ VS INPUT CURRENT
(l

1276

Photon Coupled Isolator H11 A3- H11A4

Ga As

Infrared Emitting Diode

& NPN

Silicon Photo-Transistor
L

The General

Electric

H11A3 and H11A4

NOTE

TT

TT TT
iW

a dual in-line package.

(TOP VIEW)

maximum

ratings: (25C)

JJi

*100

11

.01

E
F

,0

JJ.

9C

.0

.1

00

.340
.0 2C
.20C

3
4

.3

.3 7

00

5.0 8
.07 C 1.01
1.78
.1
2.79
C 2.2 8
.08 5
2.1 6
.0
.30 5
2 .2 03
2.5 4
5
5

.01 5

NOTES

8.64
.50 6

.406

9.53

85

.1

.225 .280 5.7

.1

5
2.54

.47 C

7.12

NOTES:
1.

milliamps

There shall be a permanent Indication of term

inal orientation in the quadrant adjacent to
terminal
t

lead centers.
Overall installed dimension.

2. Installed position

ampere

MIN.
MAX
8.3 8 18.89
7. 6 Z
REF.
1

.350

300 REF

milliwatts

60

MIN.
.3 3

B
C
D

G
1

-Hk-Hr

INFRARED EMITTING DIODE

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width l^sec 300 P

MILLIMETER

INCH
MAX.

SYMBOL

infrared emitting diodes coupled with a silicon photo-transistor in

absolute

are gallium arsenide,

3-

4.

Ps)

These measurements are made from

the sell-

ing plane.
5-

Reverse Voltage

Four places.

volts

TOTAL DEVICE

Derate 1.33mW/C above 25 D C ambient.

Storage Temperature -55 to 150C

Operating Temperature -55 to 100C

PHOTO-TRANSISTOR

Lead Soldering Time

**150
30
70

Power Dissipation

Vceo
Vcbo
Veco

milliwatts

volts

volts

260C) 10 seconds

1770V(RMS)
1060V(RMS)

2500V (peak)
1500V (peak)

H11A3
H11A4

volts

100

Collector Current (Continuous)

(at

Surge Isolation Voltage (Input to Output).

Steady-State Isolation Voltage (Input to Output).

H11A3
H11A4

milliamps

**Derate 2.0mW/C above 25C ambient.

1500V(peak)
950V (peak)

1060V (RMS )
660V (RMS)

individual electrical characteristics (25C)

INFRARED EMITTING DIODE
Forward Voltage
(I F = 10mA)

TYP.
1.1

MAX.
1.5

PHOTO-TRANSISTOR

UNITS
volts

MIN. TYP. MAX.

Breakdown Voltage V( BR )c Eo
= 10mA, I F = 0)
Breakdown Voltage V( BR ) CBO
(I c = IOOjuA, I F =0)

V( BR )eco

10

microamps

Breakdown Voltage

(Vr = 3V)

(I E

= 100/iA,I F

ICEO

(V CE = iov I F = 0)
50

Capacitance

picofarads

Capacitance

70

volts

volts

50

nanoamps

picofarads

(V CE = 10V, f=lMHz)

(V = 0,f=lMHz)

electrical characteristics (25C)

MIN.

DC

volts

=O)

Collector Dark Current

coupled

30

(I c

Reverse Current

UNITS

Current Transfer Ratio

(I F

= 10mA,

Collector to

VCE

H11A3
H11A4

= 10V)

= 10mA, I c = 0.5mA)
Isolation Resistance (Input to Output Voltage = 500V DC )
Input to Output Capacitance (Input to Output Voltage = 0,f = 1MHz)
Saturation Voltage

Switching Speeds:

Rise/Fall
Rise/Fall

Emitter

1277

MAX.

UNITS

%
%

20
10
0.1

(I F

Time (VCE = 10V, ICE = 2mA, R L = 10012)

Time (V CB = 10V, I CB = 50/uA, R L = lOOfi)

TYP.

0.4

volts

gigaohms

100
2

picofarads

microseconds

300

nanoseconds

H11A3, H11A4

TYPICAL CHARACTERISTICS

=20mA

=
F IOmA

7
---^
v CE .iov

=5mA

IF

NORMALIZED TO;
vCE - IOV
TA =Z5C

TA - AMBIENT TEMPERATURE
I

- "C

INPUT CURRENT

OUTPUT CURRENT VS TEMPERATURE

OUTPUT CURRENT VS INPUT CURRENT

=
F 50inA

IF

)OmA

CE

/
/,

o
<
I

*
o

J2
Ip'5mA

'/

0I

//

NO RMALIZED TO

//

v CE
rF

iov

i0mA

//
'/
,

VCE

COLLECTOR TO EMITTER VOLTAGE - VOLTS

OUTPUT CHARACTERISTICS

Vp - FORWARD VOLTAGE

VOLTS

INPUT CHARACTERISTICS

L-

IK

v :B .OV

MOVOLTS
ICEO-2mA
Vsec
on
'off
V rF

RL

IO a

IOOO

'CEO" OUTPUT CURRENT

mA

If-INPUT CURRENT-mA

SWITCHING TIMES VS OUTPUT CURRENT

OUTPUT CURRENT CBO VS INPUT CURRENT

(l

1278

Photon Coupled Isolator H11A5

Ga As

Infrared Emitting Diode

The General

Electric

H11A5

is

& NPN

Silicon Photo-Transistor

a gallium arsenide, infrared emit

ting diode coupled with a silicon photo-transistor in a dual in-

maximum

absolute

ratings: (25C)

I 4<
*100

60

milliamps

'

(2.
|

4
<LL

'
I

Xl

U.

PLANE

.0

.0

.0

.0

.1

4
9

.1

.08 5
2

.0

54
1

.3

75

.1

85

5
3

9.53
2.54

.280 5.7

.225

5
.3

00

.1

2.79
2.1 6
03 .305

.2

1.79

l.OI
C 2 28

00

50 8
5.0 B

.Of 5

S
NOTES:

"

N
P

2C .406

.200
.070

.47 C

7.12

There snail be a permanent indication of term

inat orientation in the quadrant adjacent to
terminal

Ps)

lead centers.
Overall installed dimension

2. Installed position
3.

Reverse Voltage

4.

volts

1.33mW/C above 25 C

These measurement* are mod* f rnm the spiting plone.

5.

*Derate

.0

*~f

8.64

.340

J-L

SEATING 1-i-

35

.3

B
C

El

ampere

TT

Hk H^k

milliwatts
1

SYMBOL
A

(TOP VIEW)

1
1

1*

INFRARED EMITTING DIODE

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width lAisec 300 P

TTTT

MILLIMETER
INCH
MAX. NOTES
MIN.
MAX.
8.38 18.89
.3 5
REF
2
.300 REF 7. 6 2

SEE

NOTE

package.

line

Four pioces.

ambient.

TOTAL DEVICE
PHOTO-TRANSISTOR

Storage Temperature -55 to 150C

**150

Power Dissipation

Vceo
Vcbo
Veco

volts
volts

Surge Isolation Voltage (Input to Output).

volts

100

Collector Current (Continuous)

**Deiate

30
70

Operating Temperature -55 to 100 C

Lead Soldering Time (at 260C) 10 seconds

2.0mW/C above 25C

milliwatts

1060V(RMS )

1500V(peak)

milliamps

Steady-State Isolation Voltage (Input to Output).

660V (RMS)

950V (peak)

ambient.

individual electrical characteristics (25C)

INFRARED EMITTING DIODE
Forward Voltage
(I F = 10mA)

TYP.
1.1

MAX.
1.7

PHOTO-TRANSISTOR
Breakdown Voltage - V( BR)CEO

UNITS
volts

(I c

(I c

Reverse Current

10

microamps

- V( BR) CBO
=0)

= 100/nA, I F

Breakdown Voltage

(VCE = 10V I F
;

50

Capacitance

picofarads

volts

70

volts

volts

100

nanoamps

picofarads'

EC o

CEO

=O)

Capacitance

electrical characteristics (25C)

MIN.

V CE

= 10V)
=
10mA, I c = 0.5mA)
Saturation Voltage
=
500V DC )
Voltage
Output
(Input
to
Isolation Resistance
= 0,f = 1MHz)
Voltage
Output
(Input
to
Capacitance
Output
Input to

DC

(V CE = 10V,f=lMHz)

(V = 0,f= 1MHz)

coupled

-V (BR

(I e = 100aiA, I F =0)
Collector Dark Current

(Vr = 3V)

30

= 10mA, I F = 0)

Breakdown Voltage

UNITS

MIN. TYP. MAX.

Current Transfer Ration

Switching Speeds:

(I F

= 10mA,

Collector to Emitter

Rise/Fall
Rise/Fall

1279

MAX.

0.1

0.4

UNITS

30

(I F

Time (V CE = 10V, ICE = 2mA, R L = 100J2)

Time (VCB = 10V, I CB = 50/uA, R L = 100ft)

TYP.

volts

gigaohms

100
2

picofarads

microseconds

300

nanoseconds

H11A5
TYPICAL CHARACTERISTICS

E-;^-

l^ffftfft.

""

__-

- ^"
NORMALIZED TO

F =20mA

""

IOmA

'

IF

_-

=5mA

~~

"'

=/ /

NORMALIZED TO
vCE

IOV

,/

V25-C

INPUT

CURRENT

TA -AM8IENT TEMPERATURE

mA

OUTPUT CURRENT VS TEMPERATURE

OUTPUT CURRENT VS INPUT CURRENT

^=50mA
I

/
/
t
|

/
7

"

IOmA

/
Va

7
/

V F - FORWARD VOLTAGE

s~

//

NO RMALIZED TO

//

v cr .Ov
Ip 'lOmA

//
/ '/
,

VC

COLLECTOR TO EMITTER VOLTAGE

VOLTS

OUTPUT CHARACTERISTICS

VOLTS

INPUT CHARACTERISTICS

"^

L"

IK

r
/'

N
i

V CE =IOVOLTS

ICE0=2mA
=

'on

Rl

'off

5 fsec

RL

Vcb'IOV

10 a

OOfl

CEO" OUTPUT CURRENT

mA

IF -

SWITCHING TIMES VS OUTPUT CURRENT

INPUT CURRENT-

mA

OUTPUT CURRENT CBO' VS INPUT CURRENT

(I

1280

PHOTON COUPLED CURRENT THRESHOLD SWITCH H11A10

Infrared Emitting Diode & NPN Silicon Photo-Transistor

Ga As

The General Electric H11A10 is a gallium arsenide infrared emitting diode coupled with a
photo transistor in a dual in-line package. It is characterized and specified with
two resistors, one on the input and one on the output. This configuration provides a
circuit which will detect a doubling of the input current level by registering more than a
twenty to one difference in the output current over a wide temperature range.
silicon

FEATURES:

Programmable Threshold

"off

to

"on" with

a 2/1

change in input current

Glass Dielectric Isolation

Fast Switching Speeds
Operation over wide temperature range
High Noise Immunity
Covered under U.L. Component Recognition Program, reference

SEE

NOTE1

TT
file

E51868

TT TT

<

(TOP VIEW)

absolute

maximum

ratings: (25C)

(unless otherwise specified)

JJL J_L

Hk

-A'\-

INFRARED EMITTING DIODE

Power Dissipation
Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width 1 //sec, 300 pps)

TA
Tr

25C

==

25 c C

*100
*100
50

Reverse Voltage

milliwatts
milliwatts

milliamps

ampere

volts

Derate 1.33mW/C above 25C

MAX

.3

.300

C
D

.0

.3

.0

.0

4
9

T A = 25C **300
T c = 25C ***500

(Tc indicates collector lead temperature 1/32"

V C EO
Vcbo

V EBO
Collector Current (Continuous)

milliwatts

8.64

02C .406
.07

I.O-l

1.78

.1

2.2B

2.79
2.1 6

.0

.100

.0

.2

2.5
1

.375

00

.1

.225

.1

.2

85
80

5
3
3

9.53
2.54
5.7
1

47 C
12

7.

NOTES.

milliwatts

There shall be a permanent indication of term

inol orientation in the quadrant adjacent to

frorr case)
i

2. Installed position

volts

3. Overall installed dimension.

4 These <nea*orerr.pnt<s are made

volts

5.

volts

'mm

the seat-

ing plane.

Four places.

milliamps

0-

**Derate 4.0mW/C above 25C

"Derate 6.7mW/C above 25C

>./
5

TOTAL DEVICE

R2

HIIAIO
_i

THRESHOLD SWITCH BIAS

Lead Soldering Time (at 260C) 10 seconds

Input to Output Isolation Voltage 1500V (peak)
Surge Isolation (Input to Output)

CIRCUIT ILLUSTRATION

1060V (RMS )

Steady-State Isolation Voltage (Input to Output)

950V (peak)

0j

Storage Temperature -55 to 150C

Operating Temperature -55 to 100C

1500V (peak)

leod centers.

30
70
100

.3

305

03
4

.01 5

NOTES

50 8
5.0 8

.08 5

M
N
P

REE
,20C

PHOTO-TRANSISTOR

MAX.
MIN.
8.3 8 18.89
7. 6 2
RE F
1

.3A0
1

Power Dissipation
Power Dissipation

MILLIMETER

INCH

SYMBOL

660V (RMS)
1281

H11A10
individual electrical characteristics (25C)

(unless otherwise specified)

INFRARED
EMITTING
OIODE
Forward Voltage
(I F

SYMBOL
vF

MIN.

MAX.

PHOTO-TRANSISTOR

UNITS

Breakdown Voltage

volts

1.5

=10mA)

(I c

Reverse Current

IR

(Vr=6V)

V (BR)CEO

30

V (BR)CBO

70

V(BR)EBO

100

Cj

Breakdown Voltage
(I e =100mA,I f =0)

picofarads

f=lMHz)

out

'in

1
V:

in

RP

I50A

^2.7Mn

Vout

I
FIGURE

THRESHOLD CIRCUIT CHARACTERISTICS BIAS PER FIGURE

-

(-55C to 100C Unless Otherwise Specified)

SYMBOL

PARAMETER/CONDITIONS

'out

Output Current (V out =l0V, 1^

Output Current (V out =10V, 1^

Iou

D.C. Current Transfer Ratio

'out

M.
^out

R io
ton

<
<

MIN.

5mA, T A =25C)
5mA, T A =100C)

(VourJOV,^^ 10mA)

10

Output Saturation Voltage (I^lOmA, I

out =0.5mA)
Input to Output Resistance (V =500V) Note 1
io
Turn-On Time (Vcc = 10V, 1^=20 mA, R =1002)
L

TYP.

MAX.

UNITS

50

nanoamperes

50

microamperes

30
0.2

percent
0.4

volts

100

gigaohms
5

microseconds

microseconds

Figure 2

Turn-Off Time (Vcc = 10V,

Figure 2

^ff

Note

1:

MAX.

UNITS
volts

volts

(I c =100mA, I F =0)

Capacitance

(V=0,

MIN. TYP.

=10mA, I F =0)

Breakdown Voltage

microamps

10

SYMBOL

in

=20mA, R L =100ft)

Tests of input to output isolation current resistance, and capacitance are performed with the input terminals
(diode)
shorted together and the output terminals (transistor) shorted together

'in

v/WA

INPUT

iPULSE

on-^ (-^ j^toff

VOLTAGE WAVE FORMS

TEST CIRCUIT

FIGURE
1282

volts

TYPICAL CHARACTERISTICS
BIASED PER FIGURE 1

H11A10

s"
!

--55-C

IOO"C-

50

CE

io

R,-I50fl
NC RMA IZED TO:

<
X
o:
O
T

IN" 5

io

2.5

TA - AMBIENT TEMPERATURE-C*

v, N

INPUT

1.

mA
on

7MA
A*

1.0
1.5
2.0
- INPUT VOLTAGE-VOLTS

IOV

'out

LEAKAGE

2.

PROGRAMMING AND TRANSFER CHARACTERISTICS

1

5"C

"

T)

I,

N '20mA

00"C
;

10

IS*

mA

IO

-1

1
NORMALIZED TO:

10/

'

vout"

LIZED

piA

Rj 150*1

i^

A2-2.7*

voun
10 mA
J

R 2 - ,7M
ta*h 25*C

tcr

l\

5mA

j
10-7

4
I

|N

8 10

40

20

60 BOKO

VquT -output VOLTAGE-VOLTS

-INPUT CURRENT -mA

TEMPERATURE

3.

200

4.

INPUT CURRENT

-10

ON STAT

"aJT 0II N

ili

j ^
^

z
IO"

';

10-2

B
IO"

on

or ill!

R,"

^F STATE
lOLn-2 50 M A

56X1

Ms

5
1

WRM &L ZE

)T0:

CO *DITIO :

io-*
I

R2-27MH
R2

Vqut-WV

i
io-

ta

2-7

M ft

- S5*T(

3 IOC

Ta'2 5io-

1
io-'

4
I IN

5.

(0

ho

GO SO WO

2C

IS

20

-INPUT CURRENT -

THRESHOLDING

6.

1283

60 80 100 (90 200 900 400

R,~ INPUT RESISTOR -OHMS

30 40

PROGRAMMING

600

THRESHOLD COUPLER APPLICATIONS

H11A10

LINE CURRENT MONITORS

LINE DROPOUT ALARM LIGHT

When remote

line current

^a " s

(Ijjne)

programmed threshold value the

turns on, indicating loss of power to
isolated

circuit function.

below

LED

the

critical,

Phase inversion,

ac-

complished by replacing the D32L1 with a

D34C1 PNP and interchanging the collector and
emitter connections, provides an over-current
alarm light.

LED

INFORMATION FLOW DIRECTOR

To minimize
line use

and

needed to communicate between Aand

up the queue procedures

lines

set

B, a

queue system

is

set

up using HllAlO's

to

monitor

'line A

HIIAIO
INHIBIT A,

PROCESSOR
A

USE B

'line b

HIIAIO
INHIBIT B,

PROCESSOR

USE C

'i

iKirr

HIIAIO
INHIBIT C,
L

HIIAIO

USE A

THERMISTOR
VW

I50K

AA/Vi

3V"

HEATER

AA/V

6V^
AC POWER
LINE

CONDUCTIVITY

AC POWER

PROBE

LINE
DILUTION SOLENOID

In many process control applications such as solution mixing, resistor trimming, light control and
temperature control, it is advantageous to monitor conductivity with isolated low voltages and
transmit this information to a power control or logic system. Low voltages are often preferred for
safety, convenience or self heating considerations or to prevent ground loops
and provide noise
immunity. Until the advent of the HI 1 A10 such systems were complex and costly. Using the HI 1 A10

allows the use of simple low power circuits such as illustrated here to provide these functions. In
battery operated systems, the low current thresholds of the HIIAIO can considerably enhance
battery life.

1284

Photon Coupled Isolator H11A520-H11A550

Ga As

Infrared Emitting Diode

& NPN

-HUA5100

Silicon Photo-Transistor

The General

Electric

~1

H11A520, H11A550 and H11A5100 con-

,-4r
|

O+

10*>

con-

1
I

4
6
<LL J_L J_k

PLANE

High humidiy resistant silicone encapsulation.

Fast switching speeds.

ratings: (25C)

A
B

(unless otherwise specified)

D
E

INFRARED EMITTING DIODE

Power Dissipation T A = 25C
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width 1 ,usec, 300 pps)

notes;

*100
60

milliwatts

There shall be a permanent indication of term

inal orientation in the quadrant adjacent to
terminal
I

2. Installed position

amperes

4.

These measurements are made

frnrn the

5.

.3

.300

seT-

MAX,
MIN.
8.3 8 18.69
7, 6 2
REF

REF

.340
6 .0 2C
.0
.20C
.0 7C
,0 4

.0

.0

.1

.1

.406

2.5
.3

.3

00

.1

.225

.1

.2

03
4
8

.30 5
3
5
3

9.53

75

85
60

2.79
2.1 6

28
.2

1.78

1.01

.01

50
5.0 8

.08 5
2

.0

00

NOTES

8.64

G
H

N
P

lead centers.
Overall installed dimension.

MILLIMETER

INCH
MAX.

MIN.
.3 3

milliamps

3.

>ng plane.

Reverse Voltage

Hs

SYMBOL

maximum

'

hf|_

_L

ot K-ioi

High efficiency liquid epitaxial IRED.

absolute

(TOP VIEW}

SEATING

struction.

1*

>|~
isolation

TTTTTT

FEATURES:
High isolation voltage, 5000V minimum.
General Electric unique patented glass

SEE

NOTE

of a gallium arsenide, infrared emitting diode coupled with

a silicon photo-transistor in a dual in-line package.
sist

2.54
5.7
1

.47

7.12

Four places.

volts

Derate 1.33mW/C above 25 C.

TOTAL DEVICE
Storage Temperature -55 to 150C.

PHOTO-TRANSISTOR
Power Dissipation - T A = 25C **300
Vceo
Vcbo
Vebo

milliwatts

Operating Temperature -55 to 100 C.

Lead Soldering Time (at 260C) 10 seconds.

30
70

volts

Surge Isolation Voltage (Input to Output). See Note 2.

volts

100

Collector Current (Continuous)

5656V(p eak)

volts

milliamps

See Note 2.

5000V(DC)

**Derate 4.0mW/C above 25C.

individual electrical characteristics (25 C) (unless

INFRARED EMITTING DIODE
Forward Voltage Vp
(I F

MIN. MAX.
.8

1.5

UNITS
volts

= 10mA)

VF

Forward Voltage
(I F = 10mA)
TA = +100C

VF

Reverse Current

IR

.9

1.7

Cj

V( B r)cbo

.7

1.4

10

volts

microamps

100 picofarads

(V = 0,f= 1MHz)
1285

Breakdown Voltage V( BR ) EB q
(I E = lOO^A, I F = 0)
Collector Dark Current I CEO
(VCE = 10V,I F = O)
Collector Dark Current I CEO
(VCE = 10V,I F = O)
TA = 100C
Capacitance Cce
(VCE = 10V,f=lMHz)

UNITS

30

volts

70

volts

volts

50

nano-

500

(I c = lOOjuA, If = O)

(Vr = 6V)
Capacitance

MIN. TYP. MAX.

= 10mA, I F = O)

Breakdown Voltage

volts

3000V (RMS)

otherwise specified)

PHOTO-TRANSISTOR
Breakdown Voltage V( B r)ceo
(I c

Forward Voltage
(I F = 10mA)
TA = -55 C

4000V(RMS)

Steady-State Isolation Voltage (Input to Output).

amps
micro-

amps

pico-

farads

H11A520, H11A550, H11A5100

coupled

electrical characteristics (25C)

(unless otherwise specified)

MIN.

DC

Current Transfer Ratio

Saturation Voltage

(I F

= 10mA,

VCE

Collector to Emitter

H11A5100
H11A550
H11A520

= 10V)

(I F

= 20mA, Ic =

Output Voltage = 500 D c- See

Input to Output Capacitance (Input to Output Voltage =0,f = 1
Turn-On Time - t on (Vcc = 10V, I c = 2mA, R L = 10012). (See
Turn-Off Time - t off (Vcc = 10V, I c = 2mA, R L = 100S2). (See

Note

NOTE

50

20

2mA)

Isolation Resistance (Input to

100

100

1)

MHz. See Note

1)

Figure 1)

Figure 1)

TYP.

MAX.

0.4

2.0

UNITS

%
%
%
volts

gigaohms
picofarads

10

microseconds

10

microseconds

1:

Tests of input to output isolation current resistance, and capacitance are performed with the input terminals (diode) shorted together
and the output terminals (transistor) shorted together.

NOTE

2:

Surge Isolation Voltage

a.

Definition:

This rating is used to protect against transient over-voltages generated from switching and lightning-induced surges. Devices shall be
capable of withstanding this stress, a minimum of 100 times during its useful life. Ratings shall apply over entire device operating
temperature range.
b.

Specification Format:

RMS, 60 Hz voltage, of specified duration (e.g., 5656Vp ea ]c /4000VRMS f r one second).

Test Conditions:
Application of full rated 60 Hz sinusoidal voltage for one second, with initial application restricted to zero voltage (i.e., zero phase),
from a supply capable of sourcing 5mA at rated voltage.
Specification, in terms of peak and/or

c.

Steady-State Isolation Voltage

a.

Definition:
This rating

during

its

is

used to protect against a steady-state voltage which will appear across the device isolation from an electrical source
life. Ratings shall apply over the entire device operating temperature range and shall be verified by a 1000 hour

useful

life test.
b.

Specification Format:

Specified in terms of D.C. and/or

c.

RMS

60 Hz sinusoidal waveform.

Test Conditions:

Application of the full rated 60 Hz sinusoidal voltage, with initial application restricted to zero voltage
supply capable of sourcing 5
at rated voltage, for the duration of the test.

mA

TEST CIRCUIT

*i

r-

VOLTAGE WAVE FORMS

I
FIGURE

1:

Adjust Amplitude of Input Pulse for Output (Iq) of

1286

2mA

(i.e.,

zero phase),

from


H11A520, H11A550, H11A5100

TYPICAL CHARACTERISTICS

/
/
/

,__

VF

FORWARD VOLTAGE

2D

IS

ID

.5

1.0

VOLTS

INPUT CHARACTERISTICS

1.

Mh

2.

40

20

10.0

60 80 IOO

FORWARD CURRENT - mA

FORWARD CURRENT TEMPERATURE

COEFFICIENT

vCE -sov
VCE '20V"

4/
Vca =!OV

NORMALIZED TO

10'

/
t

V CE
JA

'

10V
25*C

/
NORMALIZED

'/

'

TA
IF

01

)0

*>

TA

3.

DARK

C eo

CURRENT

* 5

AMBIENT TEMPERATURE

f25*C
-0

00

,-AMBIEW TEMPERATURE -*C

*C

VS.

TO!

VCB -IOV

TEMPERATURE

4.

TEMPERATURE

C bo VS.

100

50

25C
I

=IOm A

00" c

/
/

/
>5"<
1

/
/

f mA

'

/
25-C/

^.

/'

//
/

/
/

'
/

"iooc

-''

".01

5.

OUTPUT CHARACTERISTICS

6.

//

2
-4
06 08 01
COLLECTOR TO EMITTER VOLTAGE

.04

.02
V-.-. -

1287

OJ
05
VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS

.6
-

.8

1.0

VOLTS

OUTPUT CHARACTERISTICS

2.0

H11A520, H11A550, H11A5100

TYPICAL CHARACTERISTICS
00
I

500

NORMALIZED TO

vCE -tov
I

<*

vc.- |ov

"10mA

I.O

e
3
o

03

.004

.0005

.6

.8

I.0
I

F -INPUT

OUTPUT CURRENT

7.

20

K)

40

60 80 00

.8

CURRENT- mA

VS.

IF

IMPUT CURRENT

8.

2
4
6
8 10
INPUT CURRENT -mA

20

40

60 80 100

OUTPUT CURRENT - COLLECTOR-TO-BASE

VS. INPUT CURRENT
3

^ZOml

OmA

OmA

"

5m*

1.0

If-

10mA
9
F

h
5mA

/
2mA

a
3

!=j

^r

05

. -_

|l F *

f
j=\

TO:

>IOflWt

If

mA

^fo\

1mA

Vce'IOV
'10mA
I
F

FORMALIZED

"

i.

f
-a

-2 S

2S

TA

OUTPUT CURRENT

9.

79

AMBIENT TEMPERATURE

VS.

XX

40

20

10

-*C

TEMPERATURE

10.

60WKO

400 600 WO 1000

200
EXTERNAL
R sC -SASE RESISTOR-KA

OUTPUT CURRENT

VS. BASE EMITTER

RESISTANCE

*"

III

NORMALIZED

R L- Kfl

^^

X,
IcEO ' 2

~^^

R L 'IOO

tt

1,0
I

11.

RL

rOV

lOOfl

""
20lttA

10

40

VS.

t^f

FOR

IF

NORM/ LIZED TO
R BE oofl

-IOmA

If

\_
Ofl

FOR

OmA

'on

>2C mA

6080 100

CEO -OUTPUT CURRENT-mA

SWITCHING TIMES

FOR If

t,

\c

IOmA

NORMALIZED

NORMALIZED

.8

'IOOO

.6

7s

R L -ion

*
z
3

3^S0
L

FOR

V^

mA

on

-4 ^

NORMALIZED

NORMALIZED TO:
VC 10 VOLTS

R BE

OUTPUT CURRENT

12.

1288

EXTERNAL BASE RESISTOR- Kfl

SWITCHING TIME

VS. R B e

fry.

AC INPUT PHOTON COUPLED ISOLATOR H11AA 1-H11AA2

Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistor
The General

Electric

H11AA1 and H11AA2

consist of

two gallium arsenide infrared emit-

ting diodes connected in inverse parallel and coupled with a silicon photo-transistor in

SEE

N0TE1

a dual in-line package.

TTTT

FEATURES:
AC or polarity

(TOP VIEW)

ratings: (25C)

(unless otherwise specified)

SYMBOL
A
B

INFRARED EMITTING DIODE

T A = 25C

Power Dissipation
Power Dissipation

T c = 25C

Hk H'k

Built-in reverse polarity input protection

High isolation voltage
High isolation resistance
I/O compatible with integrated circuits

maximum

lll

insensitive inputs

Fast switching speeds

absolute

TT
1*

*100
*100

C
D

milliwatts

.300

MILLIMETER
le.89

8.3 8

REF 762

REF

-34C
.0

.0 2

.Q4C

G
H

090

08

00

01 5

00
65
225 .280

178
2.79
2.16

.305

03
4

.3

.1

.2

N
P

.3

so e
5.0 8

2.5
1

8.64

406

.07 C 1.01
.IIC 2.2 8
.06 5
2

.0

5
3

953

75

47

2.54
5.7

7.12

NOTES:
I

There shall be a permanent indication of term

inol orientation in t Me quod rant adjacent
to
terminal

Derate 1.33mW/C above 25C

.350

20C

milliwatts

(T c indicates collector lead temperature 1/32" fro m case)

milliamps
60
Input Current (RMS)
ampere
(Peak)

Current
1
Input
(Pulse width 1/usec, 300 pps)

INCH
MAX.

MIN.
-3 3

2. Installed position lead centers.

3.

4.

Oueroll instolled dimension.

These measurements are made frnm the seating plane.

5.

Four places.

PHOTO-TRANSISTOR
milliwatts
T A = 25C **300
Power Dissipation
milliwatts
T c = 25C ***500
Power Dissipation
1/32"
froi
case)
temperature
n
collector
lead
indicates
(Tc
volts
V C EO
30
volts
70
VcBO

V EBO

100

Collector Current (Continuous)

volts

milliamps

**Derate 4.0mW/C above 25C

***Derate 6.7mW/C above 25C

TOTAL DEVICE
Storage Temperature -55 to 150C
Operating Temperature -55 to 100

Lead Soldering Time

260C) 10 seconds
Surge Isolation Voltage (Input to Output)
(at

1060V (RMS)
1500V (peak)
Steady-State Isolation Voltage (Input to Output)

950V (peak)

660V (RMS)

1289

'

H11AA1, H11AA2
individual electrical characteristics (25 C) (unless
INFRARED EMITTING

SYMBOL MAX

DIODE

UNITS

H11AA1
H11AA2

SYMBOL

MIN.

Breakdown Voltage
(I
c = 10mA, I F = 0)

v (br)ceo

30

volts

PHOTO-TRANSISTOR

vF

Input Voltage
(I
F = + 10 mA)

otherwise specified)

MAX.

UNITS

1.5

volts

1.8

volts

Breakdown Voltage

v(br)cbo

70

volts

picofarads

c = 100/iA.Ip =0)
Breakdown Voltage
(I
E = 100m A, I F = 0)

V (BR)EBO

volts

(I

Capacitance

(V =

0,

100

Cj

F=

MHz)

Collector

Dark Current

(VCE = 10V,I F =

CEO

0)

H11AA1
H11AA2

coupled

electrical characteristics

(25C) (unless otherwise specified)

MIN.

Current Transfer Ratio (V CE = 10V, I =

F

percent

10

Collector to Emitter

(I

percent

CEO =0.5mA, I F = 10mA)

>

F =10mA)

0.4

Note 2

0.33

Isolation Resistance (Input to

volts

CEo(VCE =1 0V,I F =-10mA)

H11AA1

1:

UNITS

20

Current Transfer Ratio Symmetry: Iceo( V

CE =10V

Note

MAX.

10mA)

H11AA1
H11AA2
Saturation Voltage

nanoamps
nanoamps

100
200

Output Voltage = 500VDC

See Note 1)

3.0

gigaohms

100

Tests of input to output isolation current resistance, and capacitance are performed with the input
terminals (diode)
shorted together and the output terminals (transistor) shorted together

10

lF =

-|lOmA|

I-

q:
l

F -|K>mA|

ra.
z>

-|

<
LU
l

(CE0)

0UTPUT WAVE FORM

(SEE

NOTE

o
UJ
N

2)

AT Vrr =5V

_j

10 2

O
z
o
LjJ

/
//

10-3
0.01

0.1

100

10

VCE -COLLECTOR TO EMITTER VOLTAGE - VOLTS

Note

2:

The H1 1 AA1

specification guarantees the

peak output current

times the
I.
IF

INPUT WAVE FORM

1290

10

minimum

mA

maximum

be no more than three

peak output current at
will

"

H11AA1,H11AA2

TYPICAL CHARACTERISTICS

NORMALIZED

TO*

vCE -iov
I

IOmA

3
t-

.05

/
/
I

-2.0

1.

-0.5
05
O
V -INPUT VOLTAGE-VOLTS

-|.0

-I.5

20

I.5

I.O

10

.8

INPUT CHARACTERISTICS

2.

2
4
6
8
-INPUT CURRENT-mA

20

10

40

60 80

TO

OUTPUT CURRENT VS INPUT CURRENT

vCE zov

=20mA

tF =

(OmA

_|

~~~-^^
!

'

NORMALIZED TO:

- -

T
I

'

4
F

-25C
=

// /

ImA

VCE =IOV
I

MOmA

TA

Tft-

3.

AMBIENT TEMPERATURE

*C

DARK CEO CURRENT VS TEMPERATURE

4.

NOR *AUZED

I0

OUTPUT CURRENT VS TEMPERATURE

TO^

VOLTS

IOmA

If

-50
1

20

IF-

10mA

^^^I F -5<3mA
^^-^"l F 20mA

___
'

~f

5.

_j

0.5

1.0

10

'"i"f

mA
t-

T
1

/
~~

-lOmA

-f

'

OJ

IF

mA

TT

TO:

VCE

W3RMALIZED

u
.05

'

mA

mA

F*

//

,c JmA

50

10

IOO

COLLECTOR TO EMITTER VOLTAGE- VOLTS

6.

OUTPUT CHARACTERISTICS

20

400 600flO0(0O0
40 60 90100
200
EXTERNAL
R H c-B4SE RESISTOR-KO

OUTPUT CURRENT VS BASE

EMITTER RESISTANCE

1291

H11AA APPLICATIONS

H11AA2, H11AA2

LOAD MONITOR AND ALARM

POWER SWITCH

many computer

In

AC power

controlled systems where

controlled, load dropout due to

is

filament burnout, fusing, etc. or the opposite

situation - load power when uncalled for due to
switch failure can cause serious systems or
safety problems. This circuit provides a simple

0.33
3.9KI

y^rr

D29E2

Y\

HIIAA

AC power

monitor which lights an alarm lamp

and provides a "1" input to the computer
control in either of these situations while
maintaining complete electrical isolation between the logic and the power system.

I80n
-AAV
Note that

ALARM

39(

INPUT TO LOGIC

"

LED
ALARM

angle
divider

for other than resistive loads, phase

of the

correction
is

monitoring voltage

required.

LIGHT

RING DETECTOR
0.2juf

IK

r
In

many telecommunications
to

desirable

detect

the

applications

presence

of a

it is

ring

system without any direct electrical

contact with the system. When the 86 Vac
ring signal is applied, the output transistor of
the HI 1 AA is turned on indicating the presence
of a ring signal in the isolated telecommunisignal in a

86 Vac

cations system.

UPS SOLID STATE TURN-ON SWITCH

BATTERY

D45H8

Interruption

of

the

120

VAC

power

line

H11AA, allowing C to charge

on the 2N5308-D45H8 combination

turns off the

arid turn

TO INVERTER
OR ENGINE
I20VAC

STARTER

1292

which activates the auxiliary power supply.

This system features low standby drain, isolation to prevent ground loop problems and the
capability of ignoring a fixed number of "dropped cycles" by choice of the value of C.

Photon Coupled Isolator H11B1-H11B2-H11B3

Ga As

Infrared Emitting Diode

The General

Electric

& NPN

Silicon Photo-Darlington Amplifier

H11B1, H11B2 and H11B3

MIN

.3

.01

3
.30

arsenide, infrared emitting diodes coupled with a silicon photo-

darlington amplifier in a dual in-line package.

absolute

maximum

,0

G
H

.0

9C

.0

.1

*100

milliwatts

60

milliamps

.0

03

.2

3
1

.3

.1

.225

5
3

953

.375

00

R
S

.305

2.5 4

2.79
2.1 6

.1

65

.2

B0 5.7

A? L

2.54

7.12

NOTES:
I.

<t

ampere

There shall be a permanent indication of term

inal orientation in the quadrant adjacent to

2 Installed position lead centers.

3. Overall installed dimension.

4 These meisuren **pt^

i

are

wndf

'rf>rn

the send-

ing plane.
5.

Reverse Voltage

1.33mW/C above

.0

I.7B

.07 C 1.0
C 2.2 8
.08 5

.1

00

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width 1 ,usec 300 P Ps)

3.3

M
N

*Derate

INFRARED EMITTING DIODE

5C

.3

ratings: (25C)

MILLIMETER
MAX N0TS
MIN
8 18.69
REF
2
REF 7. 6 2
3.64
3
.340
.406 .50 8
.0 2C
4
5.0 8
.200

INCH
MAX.

SYMBOL

are gallium

25

volts

TOTAL DEVICE

ambient.

Storage Temperature -55 to 150

C
C

Operating Temperature -55 to 100

PHOTO-DARLINGTON

Lead Soldering Time

**150

Power Dissipation

Vceo
Vcbo
Veco

milliwatts

25

volts

30

volts

volts

100

Collector Current (Continuous)

Four places.

(at

260C) 10 seconds

Surge Isolation Voltage (Input to Output).

1770V(RMS)
1060V (RMS)

2500V(peak)
1500V (peak)

H11B1
H11B2.B3

Steady-State Isolation Voltage (Input to Output).

milliamps

H11B1
H11B2,B3

3
**Derate 2.0mW/C above 25' C ambient.

1500V (peak)

1060V (RMS)

950V (peak)

660V (RMS

individual electrical characteristics (25C)

INFRARED EMITTING DIODE

MAX.

TYP.

Breakdown Voltage V( BR ) CEO

(I c = 10mA, I F =0)
Breakdown Voltage V( BR ) C bo
(I c = lOOj/A, I F = O)
Breakdown Voltage V( BR )eco

Forward Voltage

H11B1,B2(I F = 10mA)
H11B3
(I F = 50mA)

1.1

1.5

volts

1.1

1.5

volts

Reverse Current

(Vr = 3V)

10

microamps

(I E = 100juA,I F =O)
Collector Dark Current
(V CE =10V,I F = O)

50

(V = 0,f= 1MHz)

DC

Ic E o

Capacitance

Capacitance

coupled

MIN. TYP. MAX.

PHOTO-TRANSISTOR

UNITS

UNITS

25

volts

30

volts

volts

100

nanoamps

picofarads

(VCE = 10V,f = 1MHz)

picofarads

electrical characteristics (25C)

Current Transfer Ratio

Saturation Voltage

(I F

= 1mA,

V CE

Collector to Emitter

H11B1
H11B2
H11B3

= 5V)

(I F

= 1mA, I c =

1mA)

Output Voltage = 500V DC )

Input to Output Capacitance (Input to Output Voltage = 0,f =
Switching Speeds: (V CE = 10V, I c = 10mA, R L = 100ft)
Isolation Resistance (Input to

lfo 1Hz)

On-Time
Off-Time

1293

MIN.

TYP.

MAX.

500
200
100

0.7

1.0

100

125

100

UNITS

%
%
%
volts

gigaohms
picofarads

microseconds
microseconds

H11B1,H11B2,H11B3
I00

TYPirAI r HAP AT

r
I

fe

mA

I.OmA

.5mA

1.0

3
1-

-^

i-

-*

o
7*

'

UJ

N
-1

=*.u

UJ

UJ

10

.01

"

*/
/

<
V

O
2

NO RMALIZEO
\'CE
5V

O
z

Ip'lltl A

S 30

Ip

UJ

Ta

TO:

mA

+ 25C

0001
.0

10

-INP JT CUF RErMT

-55

00

mA

25

-15

65

100

T & - AMBIENT TEMPERATURE

OUTPUT CURRENT VS INPUT CURRENT

OUTPUT CURRENT VS TEMPERATURE

1,000

100

/
""

I.OmA

-""i F = .5mA
1.0
1

<

IN
1

NORMALIZED

TO:

V CE --5V

In

IF

I.OmA

ll

1.0

2.0

1.5

FORWARD VOLTAGE

V CE - COLLECTOR

INPUT CHARACTERISTICS

100

10

1.0

VOLTS

TO EMITTER VOLTAGE

VOLTS

OUTPUT CHARACTERISTICS

LOAD RESISTANCE
ion
.

NORMALIZED TO
V CE

\\

'

I CE0 =

10mA

a ^

\\

I0<*

XL

LU

R L =IOOA

\ioon

I0

IOV

A
\\ V

OC

13

Vs P
\
N

\S

Q
M

in2

I0
lu

j/

o
_,"

S\

NORMALIZED
T

TO:

\
+ 25

NORMALIZED SWITCHING SPEED

+ 45
+65
-AMBIENT TEMPERATURE-

+85
C

NORMALIZED DARK CURRENT VS TEMPERATURE

SWITCHING SPEED VS OUTPUT CURRENT

1294

Isolator H11B255
Diode & NPN Silicon Photo-Darlington

Photon Coupled
Ga As Infrared Emitting
The General

Electric

H11B255

Amplifier
A

consists of a gallium

arsenide infrared emitting diode coupled with a silicon

TT

TT TT

SYMBOL

B
C

ratings: (25C)
r*-

INFRARED EMITTING DIODES

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width ljusec. 300 P Ps)

*90

milliwatts

60

milliamps

4
J-L J_L

U.^r

>k

.406

200
040 07 C

E
F
I

G
H

.0

.0

08

.100

.1

.2

2.5
1

N
P
R

03
4

.375
OC
85 2.54
.225 .280 5.71

2.79
2.1 6
.305

5
3

5
3

9.53
.47 C

.1

.1

3 8

8.64
.50 8
5.0 8

.01

NOTES

1.78

1.0
C 2 28

.08 5

H^h-

7.12

NOTES:
1.

ampere

MILLIMETER
MAX.
MIN.
6.3 8 18.89
REF
7. 6 2

(TOP VIEW)

maximum

absolute

.330 .350
.300 REF
.340
.0 6 .02C

1#

photo-darlington amplifier in a dual in-line package.

INCH
MAX.

SEE

NOTE

There shall be a permanent indication of terminal orientation in the quadrant adjacent to

terminal

lead centers.
Overall installed dimension.

2. Installed position
3.

4 These measurement*

are

made from

tfce

sent-

ing plane.

Reverse Voltage

volts

5.

Four places.

*Derate 1.2mW/C above 25 C ambient.

TOTAL DEVICE
PHOTO-TRANSISTOR

Storage Temperature -55 to 150C

**210

Power Dissipation

milliwatts

Operating Temperature -55 to 100

260C) 10 seconds.

Vceo

55

volts

Lead Soldering Time

VC bo
VEB

55

volts

Surge Isolation Voltage (Input to Output).

volts

Collector Current (Continuous)

100

milliamps

(at

1060V (RMS)

1500V (peak)

Steady-State Isolation Voltage (Input to Output).

660V(RMS)

950V(peak)

**Derate 2.8mW/C above 25C ambient.

individual electrical characteristics (25C)

INFRARED EMITTING
DIODE
Forward Voltage
(I F = 20mA)

TYP.

MAX.

1.1

1.5

UNITS
volts

microamps

10

50

Capacitance

coupled

100M,

MIN. TYP. MAX.

V( B r>ceo

picofarads

Breakdown Voltage V( B r)ebo

(I E = 100mA, I f = 0)
Collector Dark Current I CEO
(VCE = 10V, I F = 0)
Capacitance

(V CE = 10V,f =

MHz)

55

volts

55

volts

volts

100

nanoamps

picofarads

MHz)

electrical characteristics (25C)

MIN.

VCE

= 5V)
= 50mA, I c = 50mA)
Isolation Resistance (Input to Output Voltage = 500 DC )
Input to Output Capacitance (Input to Output Voltage = 0,f = 1 MHz)

DC

UNITS

If =

0)
Breakdown Voltage V( BR )CB o
(I c = 100M, If = 0)

(V R = 3V)

Breakdown Voltage
(I c

Reverse Current

(V = 0,f =

PHOTO-TRANSISTOR

Current Transfer Ratio

Saturation Voltage

Switching Speeds:

(I F

= 10mA,

Collector to Emitter

On-Time
Off-Time

- (VCE
- (VCE

TYP.

1295

RL
RL

UNITS

100
1.0

(I F

= 10V, I c = 10mA,
= 10V, I c = 10mA,

MAX.

volts

gigaohms

100
2

picofarads

= 100J2)

125

microseconds

= 100S2)

100

microseconds

H11B255

TYPICAL CHARACTERISTICS
I00

IO

I.O

.01

o
z

V CE

5V
10m A
=

IF =

.001

.0001

1.

ioo

10

1.0

I F

-INPUT CURRENT

OUTPUT CURRENT

VS.

I00

mA

INPUT CURRENT

2.

1,000

OUTPUT CURRENT

VS.

TEMPERATURE

10

Ir=40fnA'

if

l,Om

1.0

If= im A

^L

NORMALIZED TO:
VCE = 5V
l F = 10mA
.001

.01

1.0

VF
3.

2.0

1.5

FORWARD VOLTAGE

1.0

VOLTS

E-

INPUT CHARACTERISTICS

4.

100

10

COLLECTOR TO EMITTER VOLTAGE

VOLTS

OUTPUT CHARACTERISTICS

ioo

LOAD RESISTANCE
.

NORMALIZED TO
VC E= 10V
R L =ioon
I CE0 =l0mA

Vioon.
*.

\
\

N
V

i\

ioc ion

"V As

\\

{
0.01

0.1

10

+ 25

NORMALIZED SWITCHING SPEED

'd+'r

5.

T4

+ 't+'f

SWITCHING SPEED

VS.

OUTPUT CURRENT

6.

129B

+45
+65
-AMBIENT TEMPERATURE

+85
-

NORMALIZED DARK CURRENT

TEMPERATURE

VS.

+ 100

M.m
Photon Coupled Isolator H11BX522
Ga As

Solid State

The General

Electric

Lamp & NPN

H11BX522

is

Silicon Photo-Darlington Amplifier

*

emitting diode coupled with a silicon photo-darlington amplifier

in a dual in-line package.

absolute

maximum

SEE

NOTE

infrared^

a gallium arsenide,

SYMBOL

TTTT TT

~1

B
C
D
E
F

ttf
1

(TOP VIEW)

4
6
JJ, J_L JLL

r*-i b^K

INFRARED EMITTING DIODE

.406

.0 2

.200
.040 .07C
9

G
H

.0

.0

.1

N
P
R
S

.340
.0

.1

1.01

2.28

.08 5
8

.0

.225

.30 5

3
1

38
85
60

.1

.2

5
3

9 53

75

.3

00

.1

t.78
2.79
2.1 6

2.5 4

5.0 8

.0

8.64
.50 8

.2

00

^k H^k

ratings: (25C)

MILLIMETER
INCH
MAX. NOTtS
MAX.
MIN.
.330) .350 8.38 18.8 9
REF
Z
30
REF 7. 6 2

MIN.

2.54
5.7
1

.47 C

7.12

NOTES
1

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width 1 Msec 300 P Ps)

*100
60

milliwatts

There shall be o permanent indication of term

inal orientation in the quadrant adjacent to
terminal

milliamps

2. Installed position
3.

lead centers.
Overall installed dimension,

amperes

4.

These meaeiiremprits ore made f rnm the spit-

Volts

ing plane.
5,/c-ur places.

Reverse Voltage

Derate 1.33mW/ above 25 3 C ambient.

TOTAL DEVICE
PHOTO-TRANSISTOR

Storage Temperature -55 to 150C

25
30

volts

Operating Temperature -55 to 100C

Lead Soldering Time (at 260C) 10 Seconds

volts

Surge Isolation Volta^;e (Input to Output).

volts

**150

Power Dissipation

VCEO
VCBO
VEBO

milliwatts

2500V(peak)

milliamps

100

Collector Current (Continuous)

1700V (RMS)

Steady-State Isolation Voltage (Input to Output)

1500V (peak)

**Derate 2.0mW/C above 25C ambient.

1060V(RMS)

individual electrical characteristics (25C)

PHOTO-DARLINGTON
INFRARED EMITTING DIODE TYP. MAX. UNITS
Breakdown Voltage - V( BR)CEO
1.15 volts
1.0
Forward Voltage
(I F

(I c

= 0.5mA)

MIN. TYP. MAX.

volts

30

volts

volts

10

"

= 10mA, I F = O)

Breakdown Voltage

V( BR )cbo

= IOOjuA, I F = 0)
Breakdown Voltage - V (BR ) EBO
(I c

Reverse Current

10

microamps

(Vr = 3V)

= 100//A,If=O)
Collector Dark Current I CEO
(VCE = 12V,RBE =7.5MJ2,
T A = 50 C)

UNITS

25

(I e

micro-

amps

Capacitance

50

Capacitance

(V = 0,f =

coupled

picofarads

Collector-Emitter

Cce

(VCE = 10V,f=lMHz)

MHz)

electrical characteristics (25C)

MIN.

= 6V, R BE = 7.5 M2) -25C - +50C

=
5mA, I c = 2mA, R BE = 7.5 Mil)
Collector-Emitter (I F
Saturation Voltage
Isolation Resistance (Input to Output Voltage = 500VDC )
Input to Output Capacitance (Input to Output Voltage = 0,f = 1 MHz)

DC

pico-

farads

Current Transfer Ratio

(I F

= 0.5mA,

VCE

TYP.

UNITS

200

Switching Speeds: (I F = 5mA, See Figure 1)

MAX.
1.0

100
2

Volts

gigaohms
picofarads
milliseconds

t pr

1297

TYPICAL CHARACTERISTICS
1

H11BX522
"

If'

10

DMA

0MA

i.o

tH"

NORMALIZED
V CE -5V
If- MA

<r

I F -0.5MA

F "fl

K
z

"

TO:

s
o

NORMALIZED

TO:

VrP - 5 V

*"

O
a

111

TA -+2S"C

ut

3
<

.01

[1

i-r^

1|4|

'I!

i
J

.001

"5

141

T~\

~U4444

TA -

AMBIENT TEMPRATURE-*C

OUTPUT CURRENT VS TEMPERATURE

.0001

mi

I)

1.0

IF

10

too

-INPUT CURRENT-MA

(Ml

=E

T-H-1

j^f
IF

OUTPUT CURRENT VS INPUT CURRENT

*2.0Mft-

l"

DMA

/
/

^**

j-

I F *0.3MA

[_. 40RMA LIICO

OHA

-I F -

TC

V>

w
FORWARD VOLTAGE

VCE - COLLECTOR TOCMITTER VOLTAGE-VOLTS

OUTPUT CHARACTERISTICS

VOLTS

INPUT CHARACTERISTICS
<?v,

OUT

/
9.IK

VAr

"3
O

-O

*I2

VOLTS
-J

NOR MALIZED T 0:

TA -+25'C
IF

5
'

15

meg

.n

mAin

0mA
6.8K

IN9I4

'2mtc

IN9I4

6V

0UT
J

+25

t'

+48

+63

+8S

+100

TA ( AMBIENT TEMPERATURE) C*

FIGURE

NORMALIZED
DARK CURRENT VS TEMPERATURE

1.

1298

^<

J
E

Photon Coupled Isolator H11C1-H11C2-H11C3

Ga As

Infrared Emitting Diode

&

Light Activated

SCR
MILLIMETER

INCH

The General

Electric

H11C1, H11C2 and H11C3

maximum

.0

ratings: (25C)

,0

50

.406

2C

*100

.0

3
4

1.76

1. 01
2 28

.08 5
.0 2

.2

2.79
2.1 6

03

.30 5
3

2.5 4

.3

75

.1

65

.3

9.53
.47

2.54

.225 .280

milliwatts

5.08

07C
.1

N
P

5.7

7.12

NOTES:

60

milliamps

1.

There shall be a permanent indication of terminal orientation in the quadrant adjacent to

terminal

ampere

3
Ps)

position lead centers.

Overall installed dimension.

4.

These measurements are made

mm

the seiz-

ing plane.
5.

TOTAL DEVICE

Operating Temperature -55 to 100

200
300

Peak Forward Voltage

Forward Current

sec)

Reverse Gate Voltage

volts

Lead Soldering Time

milliamps

Surge Isolation Voltage (Input to Output).

amperes

10

Forward Current (Peak)

(100/xsec 1% duty cycle)

Four places.

volts

above- 25 C ambient.

Power Dissipation (25C Ambient)

Power Dissipation (25C Case)

3.

2. Installed

Storage Temperature -55 to 150

(10m

.0
.0

.0

PHOTO-SCR

Surge Current

Reverse Voltage

RMS

REF

6 2

3.64

.100

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width 1 Msec 300 P

mW/C

7.

,20C

INFRARED EMITTING DIODE

*Derate 1.33

REF
.340

sil-

icon controlled rectifiers in a dual in-line package.

absolute

.3

.300

arsenide, infrared emitting diodes coupled with light activated

NOTES

MIN.
MAX.
MAX
.350 6.3 8 I8.B9

SYMBOL

are gallium

amperes

volts

** 400

milliwatts

***1000

milliwatts

260C) 10 seconds

(at

1770V(RM s)
1480V(RMS)
1060V (RMS)

2500V(peak)
2100V(peak)
1500V (peak)

H11C1
H11C2
H11C3

Steady-State Isolation Voltage (Input to Output).

5.3mW/C above 25C ambient.

***Derate 13.3mW/C above 25C case.
"Derate

H11C1
H11C2

1500V (peak)
1260V(peak)

HI 1C3

950V(peak)

1060V (RMS)

890V(RMS
660V (RMS

individual electrical characteristics (25C)

INFRARED EMITTING DIODE
Forward Voltage
(I F = 10mA)

Reverse Current

VF

TYP.

MAX.

1.2

1.5

UNITS
volts

On-State Voltage

10

microamps
(I

V DM

TM =

.3

- V TM

I DM
(V DM =200V,T A = 100C)
Reverse Current I RM
(V RM =200V,T A = 100C)

Cj

50

picofarads

UNITS

200

volts

200

volts

1.1

1.3

volts

50 microamps

50 microamps

20
350

amp)

Off-State Current

Capacitance (Anode-Gate)

V=0V,f= 1 MHz (Gate-Cathode)

(V = 0,f= 1MHz)

coupled

Peak Off-State Voltage (Rgk = 10KJ2, 100C)

Peak Reverse Voltage V RM

(R GK = 10KJ2, 100C)

(V r = 3V)

Capacitance

MIN. TYP. MAX.

PHOTO-SCR

picofarads
picofarads

electrical characteristics (25C)

MIN.

Input Current to Trigger

(VAK = 50V,

R GK

Input Current to Trigger (VAK = 100V,

H11C1,C2
H11C3
H11C1,C2
H11C3

= 10KI2)

RGK

= 27Kfi)

Output Voltage = 500V DC )

(Input
to Output Voltage = 0,f =
Input to Output Capacitance
Coupled dV/dt, Input to Output (See Figure 13)
1299

MAX.

UNITS

20
30

milliamps
milliamps

11

milliamps
milliamps

14

100

Isolation Resistance (Input to

TYP.

1MHz)

gigaohms
picofarads

500

volts//Jsec

TYPICAL CHARACTERISTICS

H11C1,H11C2,H11C3

NORMALIZED TO
VAK =50V
R GK =IOK
Ta

=25'c

Z^Z^"

io

^^=

:3 )OJX
GK

IK

IK

3
d.

z
Q

I.O

<
S

10 K

IQK
-27K

a:

27 Kj

56 K

56K

IO
5
50
IOO
ZOO
AK -ANODE TO CATHODE V0LTA6E - VOLTS

NORMALIZED TO

VAK =50V
R GK ;|OK
T A =25'C

FIGURE 1. INPUT CURRENT TO TRIGGER

VS ANODE-CATHODE VOLTAGE

-AMBIENT TEMPERATURE-"C

TA

FIGURE

INPUT CURRENT TO TRIGGER

VS TEMPERATURE

2.

NORMALIZED TO
VAK =50V
"gk =| ok
TA
=25C

40
4

R GK =300JT.

8
6
1

N ORMALIZED TO
VAK -50V

>J* PERCE

TILE
TA

-25-C

-4^

J/,'//,

"^lOTH PERCENTILE

<

jjj

\N

a.

fW
*s^

1
?

o
Z

IOK

v^s

?7K
4

jL

40 60
100
200
PULSE WIDTH-MICROSECONDS

FIGURE

T ft

4.

400

INPUT CURRENT TO TRIGGER

VS PULSE WIDTH

AMBIENT TEMPERATURE -*C

FIGURE 3. INPUT CURRENT TO TRIGGER

DISTRIBUTION VS TEMPERATURE

??

\
Vfl

50 VOLTS

'

RGK -IK
1?

10

fl

^^IOK

"--._

56K

__ __

2
0.5

FIGURE

5.

SO
60
70
INPUT CURRENT - MILUAMPERES

1.0

Vf FORWARD VOLTAGE-VOLTS

FIGURE

TURN ON TIME VS INPUT CURRENT

6.

INPUT CHARACTERISTICS
l

1300

1000

VSVp

TYPICAL CHARACTERISTICS OF OUTPUT (SCR)

-.
1

IOOO

H11C1,H11C2,H11C3

NOTE (l)LEAD TEMPERATURE MEASURED AT THE WIDEST PORTION

--^

'

600
a 400

12)

AMBIENT TEMPERATURE MEASURED AT A POINT

ml|

1ftkl

a.
,

R GK

3004A,

II

tM
t^=P=^

IOOO

500

<

'

f
j

-^**Z

i*20
i
10

"T
'

I00

=^^=^

?a*

"""""*

""""-^t-^^

FIGURE

-40

VAK =50V

20

-20
T.

40

0.1
04
02
TIME-SECONDS

Q04

0.02

001

0.004

~h=^
5GK
'

fc=^

si:27K

^-~.

8.

BO

10

20

40

100

MAXIMUM TRANSIENT THERMAL

IMPEDANCE

60

^,

t-

JUNCTION
TO LEAD

*~

'<

z 100
<
S 60
?,_ 40

I00

-AMBIENT TEMPERATURE-C

FIGURE 7. HOLDING CURRENT

VS TEMPERATURE

NORMALIZED TO
VAK -50V
TA -25-C

IOOO

_^ _

'
1

500

/ /
J

sov

0.2

FIGURE 10. ON STATE CURRENT

VS MAXIMUM ALLOWABLE TEMPERATURE

T.

0.6

0.4

STATE CURRENT - AMPERES

0*1

-AMBIENT TEMPERATURE -*C

9. OFF STATE FORWARD

CURRENT VS TEMPERATURE

FIGURE

_-i

'/

//

1(

.4

Jl
a.

4
Oi

s,

ik" *n

n>

UU
06

- JUNCTION TEMPERATURE

a.

25C

4
UUN CT

ON TE (PE

*AT JRE = 10 0"C

o
,_

'

0.0

M
.

S,

X*Si 27K

i^^

*IN CREAS ES TO FOB WARD

B REAKOV ER vo LTA GE
,

20

^s^jssk

-ON-STATE VOLTAGE
T.

FIGURE

1 1.

3.0
-

VOLTS

-AMBIENT TEMPERATURE -"C

dV/dt VS

TEMPERATURE

FIGURE 12. ON-STATE

CHARACTERISTICS
1301

H11C1,H11C2,H11C3

10A, T 2 L

TYPICAL APPLICATIONS

COMPATABLE, SOLID STATE RELAY

Use of the HI 1C1 for high

sensitivity,

2500 v

isolation capability, provides this highly reliable

solid state relay design. This design is compatable

74H series T 2 L logic

120VAC loads up to 10 A.

with 74, 74S and

inputs and

CONTACT

COIL

20 V AC

systems

DT230B(4)

INDICATOR

25W LOGIC INDICATOR LAMP DRIVER

470

The high surge capability and non-reactive input characteristics

of theHl 1C allow it to directly couple, without buffers, T 2 L
and DTL logic to indicator and alarm devices, without danger
of introducing noise and logic glitches.

LAMP

5V

HIICI

LOGIC
INPUT

I20VAC

56 K

200V SYMMETRICAL TRANSISTOR COUPLER

Use of the high voltage

PNP

HI 1C provides a 200V
and negative signals with current
transfer ratios of over 1%. This function is useful in remote instrumentation,
high voltage power supplys and test equipment. Care should be taken not to
exceed the HI 1C 400
power dissipation rating when used at high voltages.
portion of the

transistor capable of conducting positive

INPUT

mW

COUPLED

FIGURE 13
- TEST CIRCUIT

dV/dt

V p =800 Volts
t
=010 Seconds
p
f

= 25 Hertz

T A =25C

+ IOO V AC

IOO.Q

dV/dt

EXPONENTIAL

RAMP

1302

GEN.

o-

OSCILLOSCOPE

Photon Coupled Isolator H11C4-H11C5-H11C6

Ga As

Infrared Emitting Diode

The General

Electric

&

Light Activated

H11C4, H11C5 and H11C6

SCR

are gallium

SEE

NOTE!

arsenide, infrared emitting diodes coupled with light activated

TTTT
3

silicon controlled rectifiers in a dual in-line package.

maximum

.340
1

ratings: (25C)

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width ljusec 300 P

milliwatts

ampere

.0

9.64
2C .406 .50 8
5.0 8
1.78
.07 C 1.01
2.79
.1
C 2.2 8
2.1 6
.06 5
.305
.0 2 .2 03

.0

.100

2.5

1.

.3

.225

There

stiall

B5
80

.1

.2

953

.375

00

.1

3
5

.0

K
N
P
R
S

.0

.200
4
9

>K

milliamps

.01

.0

Hk^Hr

*100
60

D
E

JJi J_L JJ.

INFRARED EMITTING DIODE

MILLIMETER
INCH
MAX. NOTtS
MIN.
MAX.
.3 5
B.3 8 18.69
2
7.
HE F
REF 6 2
|

3
.30

.3

TT

(TOP VIEW)

absolute

SYMBOL
A

.47

2.54
5.7
1

7,12

be a permanent indication of term

quadrant adjacent to

inal orientation in the

terminal

Ps)

lead centers.
Overall installed dimension.

2. Installed position
3.

Reverse Voltage

volts

4.

These meosurempnts are

5.

Four places

rad*"

'rnm the see-

ing plane.

3
*Derate 1.33mW/C above 25' C ambient.

TOTAL DEVICE
PHOTO - SCR
400
300

Peak Forward Voltage

RMS Forward Current
Forward Current (Peak)
(lOOjusec 1% duty cycle)

milliamps

amperes

10

Surge Current (10m sec)

Reverse Gate Voltage

Power Dissipation (25C Ambient)

Power Dissipation (25C Case)

volts

amperes

volts

** 400
***1000

milliwatts

Storage Temperature -55 to 150C

Operating Temperature -55 to 100C

Lead Soldering Time (at 260 C) 10 seconds

Surge Isolation Volta ge (Input to Output).

H11C4
H11C5
H11C6

2500V (peak)
2100V(p eak)
1500V(peak)

1770V(RMS)
1480V (RMS)
1060V (RMS)

Steady-State Isolation Voltage (Input to Output).

H11C4
H11C5
H11C6

milliwatts

**Derate 5.3mW/C above 25 C ambient

c
***Derate 13.3mW/C above 25 C case.

1500V (peak)
1260V(peak)
950V (peak)

1060V (RMS)

S90V(RMS)
660V (R ms)

individual electrical characteristics (25 C)

INFRARED EMITTING DIODE
Forward Voltage
(I F = 10mA)

Reverse Current

VF

Ir

TYP.
1.2

MAX.
1.5

10

UNITS
volts

microamps

PHOTO - SCR

MIN. TYP. MAX.

Peak Off-State Voltage - V DM

(R GK = 10KO, 100C)
Peak Reverse Voltage V RM
(R GK = lOKft, 100C)

400

volts

400

volts

- V TM

1.1

1.3

volts

1dm

50

microamps

150

microamps

20
350

picofarads

On-State Voltage
(I

(V r = 3V)

TM =

.3

amp)

Off-State Current

T A = 100 C)
(Vdm
Reverse Current I R m
(V RM =400V,T A = 100C)

UNITS

= 400V,

Capacitance

Cj

50

picofarads

(V = 0,f=lMHz)

coupled

Capacitance (Anode-Gate)

V=0V,f= 1MHz (Gate-Cathode)

picofarads

electrical characteristics (25C)

MIN.

Input Current to Trigger (VAK = 50V,

Input Current to Trigger (VAK =

R GK

= 10K2)

100 V, R GK = 27Kft)

Output Voltage = 500V DC )

Input to Output Capacitance (Input to Output Voltage = 0,f = 1MHz)
1303
Coupled dv/dt, Input to Output (See Figure 13)
Isolation Resistance (Input to

H11C4, C5

H11C6

TYP.

MAX.

UNITS

20
30

milliamps
milliamps

H11C4, C5

11

milliamps

H11C6

14

milliamps

100

gigaohms

500

volts//zsec

picofarads

TYPICAL CHARACTERISTICS

H11C4,H11C5, H11C6

~TT~

NORMALIZED TO

AK ,50V

V
R

GK =IOK

TA

=25'C

GK

30

a:

io

EC

*~

QK -300X1

IK

cc

3
a.

IOK

o
<
i
z

IOK

I.0

27 K~

27K

56 K
56K

NORMALIZED TO
5

A(<

FIGURE
VS.

1.

10
50
100
200
-ANODE TO CATHODE VOLTAGE - VOLTS

400

VAK = 50 V
R GK = I0K
T A ^25C

INPUT CURRENT TO TRIGGER

TA

20
40
60
-AMBIENT TEMPERATURE--C

80

I00

I20

ANODE-CATHODE VOLTAGE
FIGURE

2.

INPUT CURRENT TO TRIGGER

VS.

TEMPERATURE
NORMALIZED TO
VAK =50V
R GK -IOK
TA

25C

20
R GK

300.TI

1
*^
N ORMALIZ ED TO
v lK .50V

J
7m w

PERCEN TILE

N^

GK

6
IK

1,0K

I
a

.6

"^

**-IOTH PERCENTILE

IOK

27K

.2

FIGURE

AMBIENT TEMPERATURE

4.

20
40 60
100
200
PULSE WIDTH-MICROSECONDS

8 10

400

1000

INPUT CURRENT TO TRIGGER

VS. PULSE WIDTH

-*C

FIGURE 3. INPUT CURRENT TO TRIGGER

DISTRIBUTION VS. TEMPERATURE

K' 50 VOLTS

Vfl

\
RGK

v\ \
=

I0

\
IK

-Id 'r

^s,

'0 n

^KJK

'---

56 K

__

^
'

==

"=
0.5

IO

20

30
I

FIGURE

5.

40
50
60
70
-INPUT CURRENT - MILLIAMPERES
F

TURN-ON TIME

VS.

80

90

INPUT CURRENT

00

1.0

Vp-FORWARD VOLTAGC-VOLTS

1304

FIGURE

6.

INPUT CHARACTERISTICS
l

F VS.

Vf

TYPICAL CHARACTERISTICS OF OUTPUT (SCR)

H11C4, H11C5, H11C6

10.000 r

GK

300^1.

1000

fcE=

IQK

100

"27K
50

g
3
I

0.001

0002

FIGURE

'

VAK

1
I

20

FIGURE

0.01

002

10

01
02 04
TIME-SECONDS

004

20

40

100

56K

T,

0004

50V

8.

MAXIMUM TRANSIENT THERMAL

IMPEDANCE

60

40

-AMBIENT TEMPERATURE -*C

HOLDING CURRENT
TEMPERATURE

7.

VS.
0,000

NORMALIZED TO
5CW
V
AKT4 .SS'C

==

3
5

ioo

<
en

o
z
400V
J?

/50V

,c

0.4

0.2

0.6

ON STATE CURRENT

FIGURE

AMPERES

FIGURE 10. ON-STATE CURRENT VS.

MAXIMUM ALLOWABLE TEMPERATURE

Ta -

AMBIENT TEMPERATURE -'C

9.

OFF-STATE FORWARD

CURRENT VS. TEMPERATURE

2
lOOOp

'/

//

w
<

_,

2r
l0

r ok

10

R
IJ

V)
oe

UJ

a.

\^

1^

%
j

.mct^

-JUNCTION TEMPERATURE = 25"C

<

11

11

11

11

aL

Si

-02

z
5
a

1.0

cc

I0K

^r

"^^27K
^s.SSK

IN

CREAS ES TO FORWARD

B REAKOV ER
I.O

VO LTAGE
,

3.0

V T -0N-STATE VOLTAOE -VOLTS

T.

-AMBIENT TEMPERATURE -*C

1305

FIGURE

11. dv/dt VS.

TEMPERATURE

FIGURE 12. ON-STATE

CHARACTERISTICS

H11C4,H11C5,H11C6

TYPICAL APPLICATIONS

10A,T 2 L COMPATIBLE, SOLID STATE RELAY

Use of the HI 1C4 for high

sensitivity,

2500V iso-

lation capability, provides this highly reliable solid

state relay design. This design is compatible with

74,

74S and 74H

and

220V AC

series

T2 L

CONTACT

COl

220 V AC

logic systems inputs

loads up to 10A.

INS060(4)

INDICATOR

25W LOGIC INDICATOR LAMP DRIVER

LAMP
470 .n.

The high surge capability and non-reactive input characteristics

of the H11C allow it to directly couple, without buffers, T 2 L
and DTL logic to indicator and alarm devices, without danger
of introducing noise and logic glitches.

HIIC4

5V
LOGIC
INPUT

220VAC
l__

56 K

400V SYMMETRICAL TRANSISTOR COUPLER

Use of the high voltage PNP portion of the HI 1C provides a 400V transistor
capable of conducting positive and negative signals with current transfer
ratios of over 1%. This function is useful in remote instrumentation,
high
voltage

power

ceed the

INPUT

OUTPUT

supplies and test equipment. Care should be taken not to expower dissipation rating when used at high voltages.

H11C 400

mW

FIGURE 13

COUPLED dv/dt - TEST CIRCUIT

V p =800
t
f

Volts

=.010 Seconds

= 25 Hertz

+ IOO

T A =25C

VAC

\OOSl
,

VP

HA
1

1
i

o-

dV/dt

hS

EXPONENTIAL

RAMP

GEN.

1306

ci-

T*
OSC
I

LLOSCOPE

Photon Coupled Isolator H11D1-H11D4

Ga As

& NPN

Infrared Emitting Diode

The General

Electric

HI 1D1-H1 1D4

Silicon High Voltage Photo-Transistor

are gallium arsenide, infrared

SEE

SYMBOL
A

TTTTTT

tors in a dual in-line package.

ff

maximum

(TOP VIEW}

ratings: (25C)

^_._4-r

INFRARED EMITTING DIODE

*100
60

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width ljusec 300 P Ps)

3i

milliwatts

milliamps

.0

4
9

.0

G
H

.0

6.64
.50 8

2C .406

.00 8

.100

1.79

2.79
2.16

2.28

.08 5
.0

.2

03

3
1

.01 5

.3

00

5
3

9.53

.3

75

.1

85 2.54

25 .280 5.7

.2

.30 5

2.5 4

15

.1

2
3

5.08

.07 C 1.01
.1

NOTES

REF

62

7.

.200

.47

7.12

o"

There sholl be a permanent indication of term

inal orientation in the quadrant adjacent to
terminal

vi

position lead centers.

Overall installed dimension.

2. Installed

3.

REF

NOTES

JO-1

Reverse Voltage

.340
.0

N
P
R
S

i06

ampere

.3

Hk-Mr

MIN.
MAX.
8.3 8 18.89
1

3
.30

.3

B
C
D
E

absolute

MILLIMETER

INCH

N0TE1

emitting diodes coupled with silicon high voltage photo-transis-

volts

4.

These measurement* are mode *rnm the seating plane

5.

Four places.

*Derate 1.33mW/C above 25C ambient.

TOTAL DEVICE
PHOTO-TRANSISTOR
Power Dissipation

Vceo
Vcbo
Veco

H11D1-D2

H11D3-D4

**300
300
300

**300
200
200

100

100

Collector Current

Storage Temperature -55 to 150C

Operating Temperature -55 to 100

260"C) 10 seconds.

milliwatts

Lead Soldering Time

volts

Surge Isolation Voltage (Input to Output).

(at

volts

1770V (RMS )
1060V(RMS )

2500V (peak)
1500V (peak)

H11D1
H11D2,D3,D4

volts

Steady-State Isolation Voltage (Input to Output).

milliamps

H11D1
H11D2,D3,D4

(Continuous)
**Deiate 4.0mW/C above 25C ambient.

1500V (peak)

1060V (RMS)

950V (peak)

660V( RM s)

individual electrical characteristics (25C)

INFRARED EMITTING DIODE
Forward Voltage
(I F = 10mA)

TYP.

1.5

1.1

Reverse Current

MAX.

10

MIN. MAX
PHOTO-TRANSISTOR

Breakdown Voltage V( BR ) CEO Dl,2 300

UNITS
volts

D3,4 200
(I c = 1mA; I F = 0)
Breakdown Voltage - V (B r)cbo Dl,2 300
D3,4 200
(Ic = 100jliA;I f =0)
7
Breakdown Voltage - V (BR ) EB o

microamps

Dark Current - I C eo
(V CE =200V;I F =0;T A = 25C)
(VCE =200V;I F =0;T A =100C)
(V CE =100V;I F =0;T A = 25C)
(V CE =100V; I F =0; T A =100C)

50

picofarads

(V = 0,f= 1MHz)

volts

volts

100
250
100
250

Dl,2
Dl,2
D3,4
D3,4

nanoamps
microamps
nanoamps
microamps

electrical characteristics (25C)

MIN.

DC

volts

Collector

Capacitance

coupled

volts

= IOOjuA; I F = 0)

(I E

(Vr = 6V)

UNITS
volts

Current Transfer Ratio

(I F

= 10mA,

VCE

H11D1,D2,D3
H11D4

= 10V)

Switching Speeds:

Turn-On Time
Turn-Off Time

(V CE = 10V, I CE =
(V CB = 10V, I CE =

2mA, R L =
2mA, R L =
1

307

%
%

10
0.1

Collector to Emitter (I F = 10mA, I c = 0.5mA)

Saturation Voltage
to Output Voltage = 500V DC )
(Input
Resistance
Isolation
Input to Output Capacitance (Input to Output Voltage = 0,f = lMHz)

0.4

1002)

volts

gigaohms

100
1002)

UNITS

MAX.

20

TYP.

picofarads

microseconds
microseconds

H11D1-H11D4

TYPICAL CHARACTERISTICS

6
6
K>
IF -INPUT CURRENT

1.

-15
-

OUTPUT CURRENT VS INPUT CURRENT

+25
TA

OUTPUT CURRENT

2.

+65

-AMBIENT TEMPERATURE-'C

VS.

TEMPERATURE

if

10 mA

if

TlA

'

'

.1

^ --

TO

ll

'/
I.O

l,5

.0

V F - FORWARD VOLTAGE-VOLTS

3.

00

V CE - COLLECTOR TO EMITTER VOLTAGE -VOLTS

INPUT CHARACTERISTICS

4.

OUTPUT CHARACTERISTICS

300

<

VCB-IOV

3
VI

a:

o
LJ

/ip-IOrnA

Lf

V CB -1 3 V

Vca I0V
/IF' OmA

"**

""'

_J^F- 5 nA
+50

TA

5.

+75

-2 5
C
5
+5 3
T4 -AMBIENT TEMPERATURE -C

-AMBIENT TEMPERATURE-

NORMALIZED DARK CURRENT

VS. TEMPERATURE

1308

+7 >

COLLECTOR BASE CURRENT

VS. TEMPERATURE

*I00

Photon Coupled interrupter Module H13A1-H13A2

The General

Electric

H13A1 and H13A2

are gallium arsenide in-

frared emitting diodes coupled with a silicon photo-transistor in a

The gap

plastic housing.

in the

housing provides a means of inter-

rupting the signal with tape, cards, shaft encoders, or other opaque
material, switching the output transistor from an "ON" into an

n^r\

"OFF" state.
FEATURES:

Low cost,

plastic

MIN.

MAX.

MIN.

MAX.

.390

.400

9.91

10.16

*1
#>

.075

.085

1.91

2.15

.016

.019

.954

.984

.475

.495

24.24
12.07

24.99

Di

D2

.120

.130

3.05

3.30

.205

.235

S.21

5.96

.090

.110

2.29

2.79

.095

.250
.105

T-

module

Non-contact switching
Fast switching speeds

Solid state reliability

MILLIMETERS

INCHES

SYMBOL

-1

E
F
L

I/O compatible with integrated circuits

*>

H-h

.300
.120
.745
.110

.482

.407

maximum

ratings: (25C)

Storage and Operating Temperature -55 to 85C. Lead Soldering

Time

6.35
2.42
7.62

.130
.755

3.05
18.93
2.79

NOM.

2.66
1

3.30
19.17

NOM.

Power Dissipation
Forward Current (Continuous)
Forward Current

1% duty

(at

The sensing area

falls

lead*.

within a .060" (1.52

MM)

square on

this can tor line.

260C) 10 seconds.

PHOTO-TRANSISTOR

INFRARED EMITTING DIODE

(peak, 100/ls,

2.

(unless otherwise specified)

12.57

from the Mating plans and the end of the

absolute

NOTES

milliwatts

Power Dissipation

milliamps

Collector Current (Continuous)

amp

V C EO
V E CO

volts

100
60

cycle)

Reverse Voltage

**150
100

milliwatts

milliamps

30

volts

volts

**Derate 2.5mW/C above 25C ambient

*Derate 1.67mW/C above 25C ambient

individual electrical characteristics (25C)

INFRARED EMITTING DIODE
Forward Voltage
(If = 10 mA)

TYP.

MAX.

UNITS

PHOTO-TRANSISTOR

1.2

1.7

volts

Breakdown Voltage

V(BR>CEoflc =

Reverse Current

10

/lamps

UNITS

30

volts

volts

mA)

Breakdown Voltage

V br)eco(Ie=100mA)

(V R = 2V)

150

Capacitance

100

Collector Dark Current

Pf

nA

Iceo(Vce=10V,1 f =O,H=O)

(V=0, f= 1MHz)

coupled

10

MAX.

MIN.

electrical characteristics (25C)

Output Current

(I

F = 20

Saturation Voltage

(I

mA,

F = 20

V CE

mA, I c =

Switching Speeds (V CE = 10V,

On Time
Off Time

(t

+
d

(t s

H13A1
H13A2

= 10V)

c=

25/IA)

mA, R L =

/lamps
/lamps

0.2

0.4

volts

/(sees

TYP.

200
50

400

100S2)

t r)

+tf)

1309

UNITS

MAX.
-

MIN.

/xsecs


H13A1-H13A2

TYPICAL CHARACTERISTICS

10

~|"|"

~~7

10

.'

JT
/

"1

^ - + "'

.-"'*"

.*

X>mA

F .|

>

I.

! 00 mA

--+f -^
rr

"
I

fe
^

*\\

^^~^

1.0

50mA

I F -

50

b
'

Tn
/

NORMALIZED TO:
V CE -lOV
IF
20 mA

=>

-20mA
IF

-ritr

"20 it A

INPUT CURRENT
PULSE INPUT
CURRENT (200 u. sec.
D.C-

*~

T
t

/
0,01

1.0

-LLLL

IF

Ta
I

. IOitiA

N ORMALIZED TO:
vCE .iov

I
rr

.20mA

O.C.

25'

INPUT CURRENT
PULSE INPUT CURRENT
I200|1SC, 1% DUTY CYCLE
D.C.

-INPUT CURRENT-mA

OUTPUT CURRENT VS INPUT CURRENT

r>

-I5*C

25'C

55'C

B5'C

T-AMBIENT TEMPERATURE -*C

OUTPUT CURRENT VS TEMPERATURE

o2
I

BLACK
d

METALLIC
SHIELD

nl

1.0

V CE

IOV

TA

+ 25*C

o:

o
25
TA

io-i

+45
+65
AMBIENT TEMPERATURE-

NORMALIZED

NORMALIZED DARK CURRENT VS TEMPERATURE

3
<
2
or
o
2
O

TO:

vCE =iov

13

o
Q

d=

Ip=20mA
10

'

w
o

10'

10-4

50

100

150

200

250

d- DISTANCE- MILS

OUTPUT CURRENT VS SHIELD DISTANCE

01
;E

- COLLECTOR

10

100

TO EMITTER VOLTAGE- VOLTS

OUTPUT CHARACTERISTICS
1310

300

Photon Coupled Interrupter Module H13B1-H13B2

The General

Electric

H13B1 and H13B2

are gallium arsenide in-

frared emitting diodes coupled with a silicon photo-darlington in

a plastic housing. The gap in the housing provides a means of interrupting the signal with tape, cards, shaft encoders, or other

opaque material, switching the output

"OFF"
FEATURES:

into an

transistor

from an "ON"

state.

Low cost, plastic module

Non-contact switching
Solid state reliability
I/O compatible with integrated

n^i
_
* lo

o4

IF

Mr
T

MIN.

MAX.

MIN.

MAX.

.390

.400

9.91

10.16

*1

.085
.019

1.91

*>

.075
.016

.954

.984

Di

.495

24.24
12.07

D2

.475
.120

.130

3.05

e1

.205

B2

.090

.235
.110

2.29

.095

.250
.105

.300

0P

.120
.745

circuits

MILLIMETERS

INCHES

SVMBOt

FH

Q
T

-i-i*

.407

24.99
12.57
3.30
5.96
2.79

5.21

a35
2.42
7.62

.130

2.65
1

3.05
18.93
2.79

.755

.110

NOTES

2.15
.482

NOM.

3.30
19.17

NOM.

NOTES:

absolute

maximum

ratings: (25C)

(unless otherwise specified)

1.

Four leads. Lead diameter controlled between .050"

from the seating plane and the end of the leads,

2.

The sensing area

falls

within a .060" (1.52

MM)

(1

.27

MM)

square on

this center line.

Storage and Operating Temperature -55 to 85C. Lead Soldering

Time

260C) 10 seconds.

PHOTO-DARLINGTON

INFRARED EMITTING DIODE

*100

Power Dissipation

60

Forward Current (Continuous)

Forward Current
(peak, 100 (Js, 1% duty

(at

milliamps

amp

V CEO

25

volts

Veco

volts

100

milliamps

volts

*Derate 1.67mW/C above 25

milliwatts

Power Dissipation
Collector Current (Continuous)

cycle)

Reverse Voltage

** 15

milliwatts

**Derate 2.5mW/C above 25C ambient

C ambient

individual electrical characteristics (25C)

INFRARED EMITTING DIODE

TYP.

MAX.

UNITS

1.2

1.7

volts

Forward Voltage
(I F = 10 mA)

PHOTO-DARLINGTON
Breakdown Voltage

v (BR)CEO

Reverse Current

10

jjamps

150

Pf

= 10

UNITS

25

volts

volts

mA)

100

Collector Dark Current

nA

Iceo(Vce=10V,1 F =O, H = 0)

(V=0, f= 1MHz)

coupled

Breakdown Voltage
V( B R)ECoaE=100jUA)

(V R = 2V)
Capacitance

(J

MAX.

MIN.

electrical characteristics (25C)

Output Current

(I F

Saturation Voltage

= 20 mA,

(I

F =

V CE

20 mA, I c = 0.5

Switching Speeds (V CE = 10V,

On Time
Off Time

(t d

H13B1
H13B2

= 5V)

mA)

c = 2 mA, R L = 100J2)

MIN.

TYP.

2500
1000

MAX.
-

UNITS

1.2

volts

150

jusecs

150

/isecs

t r)

(t s

+tf)
.

1311

/lamps
/lamps

TYPICAL
r rh \L. CHARACTERISTICS
#n
1

H13B1-H13B2

\\.

V.

10

V
-y
t'

,'

,'
3

'*

If=20mA

s.

Z3

i3

o.i

-i

3
O

Q
U

<

IOmA

a.

o
UJ

lF

NORMALIZED

TO:

lF = 5 mA

0.01

D.C.

20mA

i
-

INPUT CURREN1

- KULbt

INPUI

CYCLE)

NO* tMALIZE DTO:

t-

CURRENT
(2mSEC,1% DUTY

0.001

VC E=

UJ

5V

rA

=20 nA
=25 C

=.i2!1

IF

0.0001
5

20

10
I

50

.CH

100

-55C

-INPUT CURRENT-mA

OUTPUT CURRENT VS INPUT CURRENT

-

-35C -I5C
5C
25C
45C
TA -AMMENT TEMPERATURE -C

69C

9&C

OUTPUT CURRENT VS TEMPERATURE

NORMALIZED TO^
l

*25C

BLACK
TA

AMBIENT TEMPERATURE

"C

NORMALIZED DARK CURRENT VS TEMPERATURE

METALLIC
SHIELD

LO

at

O
20 mA

-J

<
2
o:
o
?
o

'F* OnW

11
II

<->

NORMALIZEDTO:
VC E = I0V

3
o
Q
UJ

10"

d=0

Ip=20mA
10

<L

10

F =5nlA

NORMA IZEDTO:
i

20 m A
If
d- 125'

10r4

50
V CE - COLLECTOR TO EMITTER VOLTAGE -VOLTS

100

150

200

250

d-DISTANCE-MILS

OUTPUT CHARACTERISTICS

OUTPUT CURRENT VS SHIELD DISTANCE

1312

300

*.:.JBl!

Photon Coupled Isolator H15A1-H15A2

Ga As

Infrared Emitting Diodes

The General

Electric

& NPN

H15A1 and H15A2

Silicon Photo-Transistors

are gallium arsenide,

infrared emitting diodes coupled with silicon photo transistors in a

low cost
in-line

plastic

package with lead spacing, compatible to dual

absolute

MILLIMETERS
MAX. NOTES
MIN.

INCHES

package.

maximum

ratings: (25C)

*100

MAX.
.350

016

.019

D
2
E
L
S

milliamps

8*9
.407

.375
.315

.285
.090

milliwatts

60

MIN.

VIf

INFRARED EMITTING DIODE

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width 1 /usee 300 P

SYMBOL

.110

7.24
2.29

.250
.300

.020

.010
.OSS

Si

.105

.482

9.52
8.00
2.79
6.35

7.62
.26
2.16

.50

2.66

NOTES:

ampere

Reverse Voltage
*Derate 1.67m/WC above 25

volts

I.

U-J

Ps)

ambient.

FOUR LEADS. LEAD DIAMETER CONTROLLED BETWEEN .050* U.27MM) FROM THE
SEATING PLANE AND THE ENO OF THE
LEADS.

TOTAL DEVICE
Storage Temperature -55 to 85

PHOTO-TRANSISTOR

Operating Temperature -55 to 85C

**150

Power Dissipation

VCEO
Veco

milliwatts

Lead Soldering Time

30

volts

Surge Isolation Voltage (Input to Output).

volts

260C) 10 seconds

4000V (RMS)

5650V(peak)

milliamps

100

Collector Current (Continuous)

(at

Steady-State Isolation Voltage (Input to Output).

2500V(RMS)

3500V (peak)

**Derate 2.5m/WC above 25C ambient.

individual electrical characteristics (25 C)

INFRARED EMITTING DIODE

Forward Voltage
(I F = 10mA)

MAX.

TYP.

1.7

1.1

UNITS

Reverse Current

10

microamps

(Vr = 3V)

50

Capacitance

picofarads

= 10mA,I F

Breakdown Voltage V( B r)eco

(I E = 100M, If = 0)
Collector Dark Current Iceo
(V CE = 10V, I F = 0)
Capacitance

30

volts

volts

100

nanoamps

3.5

picofarads

electrical characteristics (25 C)

MIN.

DC

UNITS

(VCE = 10V,f=lMHz)

(V = 0,f= 1MHz)

coupled

V( B r)ceo
=O)

Breakdown Voltage

volts

(I c

MIN. TYP. MAX.

PHOTO-TRANSISTOR

Current Transfer Ratio

(I F

= 10mA,

VCE

H15A1
H15A2

= 10V)

= 10mA, I c = 0.5mA)
Isolation Resistance (Input to Output Voltage = 500V DC )
Input to Output Capacitance (Input to Output Voltage = O.f = 1MHz)
Turn-On Time - (VCE = 10V, I CE = 2mA, R L = 100O)
Switching Speeds:
Turn-Off Time - (V CE = 10V, I CE = 2mA, R L = 100ft)
Saturation Voltage

Collector to Emitter

MAX.

UNITS

%
%

20
10
0.2

(I F

1313

TYP.

0.4

volts

gigaohms

100
2

picofarads

microseconds
microseconds

H15A1-H15A2

TYPICAL CHARACTERISTICS
,'

-^_IF

^,

20mA

in

If

&

^tF'"

10V

'

?5*C

\fc E

TA

*
9
jp

NORMALIZED TO
VC E
IOV
=
=
10mA
Ip

n,
I

INPUT CURRENT

OUTPUT CURRENT

1.

mA

INPUT CURRENT

VS.

2.

OUTPUT CURRENT

TEMPERATURE

VS.

50 mA

1000

If

OmA

>

'
'

i'f

5mA

VCE

II

IOV

(OffiA

) ,7
VCE

4.

10

15

COLLECTOR TO EMITTER VOLTAGE

'

VOLTS

OUTPUT CHARACTERISTICS

20

VF - FORWARO VOLTAGE - VOLTS

INPUT CHARACTERISTICS

3.

V'KI

5*

\C

R L iooa

V CE

P
K

INPUT

))(-^L
ufi

<t-]r* IMA

INPUT
_

c*-

o
I

I""

n 4

'

p~-<VCE .ICTJ
i*

i_

>

DETECTOR

t* OUTPUT

|" L

IC

10 OK

FREQUENCY

5.

FREQUENCY

VS.

N^

25
TA

(HZ)

DETECTOR OUTPUT

6.

1314

+45
+65
AMBIENT TEMPERATURE-

"C

NORMALIZED DARK CURRENT

VS. TEMPERATURE

Photon Coupled Isolator H15B1-H15B2

Ga As

Infrared Emitting Diode

The General

Electric

& NPN

H15B1 and H15B2

Silicon Photo-Darlington Amplifier

are gallium arsenide,

infrared emitting diodes coupled with silicon photo-darlington

amplifiers in a

low

cost plastic package with lead spacing,

com-

patible to dual in-line package.

absolute

maximum

INCHES

ratings: (25C)

SYMBOL

INFRARED EMITTING DIODE

*100

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(Pulse width 1 jusec 300 P Ps)

60
3

.375

.110

.250

L
S

milliamps

ampere

6.35

.300

Si

7.62
.26
2.16

.020

.010
.089

9.52
8.00
2.79

7.24
2.29

.315

.285
.090

*t

milliwatts

8.89
.482

.407

.019

.016

.105

.50

2.66

NOTES:

Reverse Voltage
*Derate

*b

MILLIMETERS
MIN.
MAX. NOTES

MAX.
.350

MIN.

U-J

volts

FOUR LEADS. LEAD DIAMETER CONTROLLED BETWEEN .050" U27MM) FROM THE
SEATING PLANE AND THE END OF THE
LEADS.

I.

2f.

1.67mW/C above 25 C ambient.

TOTAL DEVICE
PHOTO-DARLINGTON

Storage Temperature -55 to 85C

**150

Power Dissipation

Vceo
Vcbo
Veco

milliwatts

Operating Temperature -55 to 85

30
70

volts

Lead Soldering Time

volts

Surge Isolation Voltage (Input to Output).

volts

100

Collector Current (Continuous)

milliamps

(at

260C) 10 seconds

4000V (RMS)

5650V(p eak)

Steady-State Isolation Voltage (Input to Output).

2500V(RMS)

3500V (peak)

**Derate 2.5mW/C above 25C ambient.

individual electrical characteristics (25C)

INFRARED EMITTING DIODE
Forward Voltage
(I F = 10mA)

TYP.

MAX.
1.7

1.1

UNITS
volts

PHOTO-DARLINGTON
Breakdown Voltage V( B r)ceo
(I c

Reverse Current

10

microamps

V( B r)eco

(I e = 100juA,I f = O)

Collector Dark Current

(Vr = 3V)

ICE o

(V CE = 10V, I F = 0)

50

Capacitance

picofarads

volts

volts

100 nanoamps

picofarads

electrical characteristics (25C)

MIN.

DC

30

(VCE = 10V,f= 1MHz)

(V = 0,f= 1MHz)

coupled

Capacitance

UNITS

= 10mA, I F = 0)

Breakdown Voltage

MIN. TYP. MAX.

Current Transfer Ratio

(I F

= 5mA,

VCE

= 5V)

H15B1
H15B2

MAX.

UNITS

%
%

400
200

- Collector to

Emitter (I F = 5mA, I c = 2mA)

Output Voltage = 500V DC )
Input to Output Capacitance (Input to Output Voltage = 0,f = 1MHz)
Turn-On Time - (V CE = 10V, I c = 10mA, R L = 100S2)
Switching Speeds:
Turn-Off Time - (V CE = 10V, I c = 10mA, R L = lOOfi)
1315
Saturation Voltage

Isolation Resistance (Input to

TYP.

0.8

1.4

volts

gigaohms

100
2

picofarads

125

microseconds

100

microseconds

H15B1-H15B2

TYPICAL CHARACTERISTICS
10

*"

S*

IF "10mA

6
a

VCE

TA

"< 25 C

5V

4-

ac

3
O
o

5mA

F-

lF = 2mA

kl

<

-I

<
Z
K
O
z

VCE = 5V
IF : 5mA
TA = 25C

111

p
.01

.0)
Ip

1.

INPUT CURRENT -

OUTPUT CURRENT

mA

55C 35C I5C 3"C 25C 40t 68C BS^C

TA-AIIEIT TEMPERATURE- e C

INPUT CURRENT

VS.

OUTPUT CURRENT

TEMPERATURE

VS.

"

'^h

If-

IOmA

':

5mA

'/

=-

2mA

NORMALIZED TO
=

5V

5 TlA

VCF
I

V F - FORWARD VOLTAGE

3.

4.

VOLTS

COLLECTOR

TO

EMITTER VOLTAGE

VOLTS

OUTPUT CHARACTERISTICS

INPUT CHARACTERISTICS

\N LOAD RESISTANCE

ST
\>

rz

\
s

R L=ioon
I
CEO -IOmA

UOOfl

II!

NORMALIZED TO
vCE .iov

NORMALIZED

\\

TO:

+ 25C

_1_

DO )n

N\\V V-472
sK
N

}
NORMALIZED SWITCHING SPEED
+25
TA

5.

SWITCHING SPEED

VS.

OUTPUT CURRENT

6.

1316

+45
+65
AMBIENT TEMPERATURE

+85
-

\ I00

NORMALIZED DARK CURRENT

VS. TEMPERATURE

-i

Matched Emitter- Detector Pair H17A1

EMITTER

DfcltL.

The General Electric H17A1 is a matched emitter-detector pair

which consists of a gallium arsenide, infrared emitting diode in a
clear epoxy TO-92 type package and a silicon photo-transistor
also in a clear epoxy TO-92 type package.
Each emitter and detector is marked with a color coded dot on
the top of the unit (see package illustration). Emitter and demust be paired

tector

as follows:

Detector

Emitter

BLACK

ORANGE
WHITE

matched to
matched to
matched to

PELLET LOCATION

wfr

BLUE
RED
VIOLET

-o2

-r

MAX.

MIN.

MAX.

NOTES

.210
.021
.019

4.31
.406
.406

5.34
.534

fi>2

.170
.016
.016

.483

*D

.170

.200

4.31

5.08

+ DI

.160
.125

.190
.155

4.06

4.83

3.17

.105

2.41
1.14

3.94
2.67

1.40

A
4b

NOTES:
(TWO LEADS) ib2 APPLIES BETWEEN L| AND L2.
Ab APPLIES BETWEEN L2 AND .5" (I2.70MM) FROM
SEATING PLANE. DIAMETER IS UNCONTROLLEDIN L]
AND BEYOND. .5" (12.70 MM) FROM SEATING PLANE.
1

Low

Cost

Side Looking

THE CENTER LINE OF THE ACTIVE ELEMENT IS

LOCATED WITHIN .020 (.51 MM) OF THE POSITION
2.

I/O Compatible with Integrated Circuits

MILLIMETERS

INCHES

SYMBOL

Us-

b
FEATURES:

4-

SHOWN.
3. AS MEASURED WITHIN .050" (1.27MM) OF THE
SEATING PLANE.

E
e
ei

L
L|

L2

Q
R
S

MIN.

.095
.045
.135
.500

.055

.170

.050
.250
.095 REF.
.055

.080

1.27

6.35
2.29
.12

1
1

REF

2.03
2.67
2.29 REF.

.105

.090 REF.

Si

4 32

3.42
12.70

absolute

maximum

ratings: (25C)

Storage and Operating Temperature -55

to 100"C.

(unless otherwise specified)

Lead Soldering Time

(at

260C) 10 Seconds.

PHOTO-TRANSISTOR

INFRARED EMITTING DIODE

*100
60

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(100 /us, l%Duty Cycle)

Power Dissipation

milliamps

Collector Current (Continuous)

ampere

Reverse Voltage

milliwatts

**150

milliwatts

100

milliamps

Vceo
Veco

30

volts

volts

volts

**Derate 2.0mW/

Derate 1.3mW/C above 25C ambient.

C above

25

ambient.

individual electrical characteristics (25C)

INFRARED EMITTING DIODE
Forward Voltage
(I F = 10mA)

TYP.

MAX.

1.2

1.7

UNITS
volts

10

/Mamps

50

pf

(Vr = 2V)

coupled
Note:

Breakdown Voltage
(Ic =

Reverse Current

Capacitance
(V = 0,f =

PHOTO-TRANSISTOR

1MHz)

V( BR )ceo

MIN.

MAX.

UNITS

30

volts

volts

100

TYP.

MAX.

1mA)

Breakdown Voltage V(br)eco

(I E = lOO^A)
Collector Dark Current Iceo
(V CE = 10V, I F = 0,H 0)

nA

electrical characteristics (25C)

electrical characteristics are measured at a separation distance of .125"

with the faces of the emitter and detector parallel within 3.

Coupled

MIN.
(I F

Switching Speeds:

Turn-On Time
Turn-Off Time

(t d
(t s

+ tr )
+ t f)

/uamps

50

= 20mA, V CE = 10V)
Saturation Voltage (I F = 20mA, I c = 25mA)

Output Current

0.2

(VCE = 10V, I c = 2mA,

(VCE = 10V, I c = 2mA,
1317

RL
RL

UNITS

0.4

volts

= 100ft)

At

= 100ft)

/usees

sees

H17A1

TYPICAL CHARACTERISTICS
IOC

10
1

,'

"

^--'

X)mA

F -I

'"

10

IF

'100

mA

.
-7

50 mA

I F

/'.'""*"

t-

DC

50 m A

(J

1.0

t~
Z3

BOTTOM

Effi

VIEW

"

Vce *IOV
I F = 20 mA

Q
ij

/
5-:

0.1

1.0

--"H

If

=20mA

D.C.

INPUT CURRENT
--PULSE INPUT
CURRENT (200|i-sc,
1% DUTY CYCLE)

-20mA

d .125"

<

ZL
/

0.5

/
0.01

N DRMALIZED TO:
VCE = I0V

lF
Tj

10
I

=zz~

^'

100

IF=

IOOmA

2.

10

1
1

===|

DC. INPUT CURRENT.

PULSE INPUT CURRENT

(200|18flc, 1% DUTY CYCLE

TA

Is
1

25 a C

-I5C

INPUT CURRENT

VS.

D.C.

-INPUT CURRENT-mA

OUTPUT CURRENT

1.

20mA

0.001

25"
a-. 125"

TTI

=20mA

-AMBIENT TEMPERATURE

OUTPUT CURRENT

VS.

'

-^

TEMPERATURI

M-d

[*" d

\U BLACK METALLI
REFERENCE
SHIELD
<q.l_rv- LINE REP- __li|j71,
<Jj1J- RESENTS
+
THE 50%
+
l
'
TOP VIEW RESPONSE
L_
POINT
SinF VIFW
~*|

WiV

III

<
s

'

lF

IOmA

'11/'
1

/ 1

NORMAL ZED

NORMAL ZED

TO:

V CE

20 m A

d = .l25"

10

IC

TO:

)mA
j % RESPONSE PO

d =.12 5"

100

COLLECTOR TO EMITTER VOLTAGE- VOLTS

OUTPUT CHARACTERISTICS

3.

~W

^
NORMALIZED TO

rrjr"

1
j
[

10

<*

ML t

=4
T

VCE

10V

0.125"

If

20mfl

ft

>*
*#>

'9

III

.01

P ERCE MTlLE

0.1

==^P

"Tm
1

"TTTT

1/
^f%twx.

Tllli^

001

.001
Iceo

4.

OUTPUT

NORMALIZED TO

VS.

0.125"

-50
+50
+100
+150
DISTANCE RELATIVE TO THE 50% RESPONSE POINT

VALUE

DISTANCE DISTRIBUTION

5.

1318

OUTPUT CURRENT

VS.

ils

SHIELD LOCATIO

Matched Emitter -Detector Pair H17B1

EMITTER DETECTOR

The General Electric H17B1 is a matched emitter-detector pair

which consists of a gallium arsenide, infrared emitting diode in a
clear epoxy TO-92 type package and a silicon photo-darlington
also in a clear epoxy TO-92 type package.
Each emitter and detector is marked with a color coded dot on
the top of the unit (see package illustration). Emitter and detector must be paired as follows:

Emitter

BLACK

ORANGE

WHITE

Detector

matched
matched to
matched to

PELLET LOCATION

BROWN
YELLOW
GREEN

A
Ab

&2
+D

+ 01

NOTES:

FEATURES:

(TWO LEADS) d,b2 APPLIES BETWEEN Li AND L2ib APPLIES BETWEEN L2 AND .5" (12.70MM) FROM
SEATING PLANE. DIAMETER IS UNCONTROLLEDIN Li
AND BEYOND. .5"(I2.70MM) FROM SEATING PLANE.
2. THE CENTER LINE OF THE ACTIVE ELEMENT IS
LOCATED WITHIN 1.020 (.51 MM) OF THE POSITION

E
e

Low

Side Looking

MILLIMETERS

INCHES

SYMBOL

Cost

el

L
L|

L2

SHOWN.
3. AS MEASURED WITHIN .050" (1.27MM) OF THE
SEATING PLANE.

I/O Compatible with Integrated Circuits

R
S

MIN.

.170
.016
.016
.

MAX.

MIN.

MAX.

NOTES

.210

5.34
.534

.019

1.31
.406
.406

.200

4.31

.190
.155
.105

4.06

.021

170

.160
.125

.095
.045
.135
.500

4.83
3.94
2.67

3.17

.055

2.41
1.14

.170

3.42

3
3

1.40

4.32

12.70

.050
.250
.095 REE
.055

080

1.27

6 35
2.29
.12

1
1

REE

2.67
2.03
2.29 REF.

.105

.090 REF.

Si

.483
5.08

maximum

absolute

ratings: (25 C)

(unless otherwise specified)

Lead Soldering Time

Storage and Operating Temperature -55C to 100C.

INFRARED EMITTING DIODE

(at

260C) 10 Seconds.

PHOTO-TRANSISTOR

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(100 us, 1% Duty Cycle)

noo

milliwatts

Power Dissipation

60

milliamps

Collector Current (Continuous)

ampere

Vceo
Veco

Reverse Voltage

**150

milliwatts

100

milliamps

25

volts

volts

volts

**Derate 2.0mW/C above 25 C ambient.

Derate 1.33mW/C above 25 C ambient.

individual electrical characteristics (25C)

INFRARED EMITTING DIODE

MAX.

TYP.

Forward Voltage
(I F = 10mA)

1.2

1.7

volts

(I c

Reverse Current

PHOTO-DARLINGTON
Breakdown Voltage V( BR )ceo

UNITS

10

(I E

50

coupled

UNITS

25

volts

volts

100

nA

100M)

Collector Dark Current

Pf

(V = 0,f = 1MHz)

Note:

MAX.

1mA)

Breakdown Voltage V( BR ) E co

juamps

(Vr = 2V)
Capacitance

MIN.

(V CE = 10V, I F

I CE o

=0,H~0)

electrical characteristics (25C)

Coupled

electrical characteristics are

measured

at a separation distance

of .125"

with the faces of the emitter and detector parallel within 3.

MIN.

(I F = 20mA,
CE = 5V)
Saturation Voltage (I F = 20mA, I c = 0.5mA)
Turn-On Time (t d + tr )
Switching Speeds:

Output Current

Turn-Off Time

(t s

t f)

TYP.

MAX.

1000
1.2

(V CE = 10V, I c = 2mA,
(VCE = 10V, I c = 2mA,
1319

RL
RL

= 100J2)
= 100ft)

UNITS
/uamps

150
150

volts
jusecs
jusecs


H17B1

TYPICAL CHARACTERISTICS

'
,'-.

10

ji
*-:

>'
.'

a.

I.0

I-

Z
UJ
a:

Ifr=20mA

'
(

BOTTOM

O.I

VIEW

i.

IOmA

<

s
CE
o
z

NORMALIZED
VC = 5V

0.0I

IF
rt

D.C.

INPUT
1.

OUTPUT CURRENT

VS.

20

50

TO:

o;
i-

V CE --3V

O.OOOI
10

"" NOF
MALIZE

j**-*^

'

IIN^UI

5mA

= i?Rr.

CURRENT
(2mSEC,1% DUTY
CYCLE

I F=

a:

20mA

INPUT CURRENT

- fULSt
O.OOI

<
s

TO:

IF

=20 TlA

TA

=25 C

=.12!5

.01

100

-55C

-35C

-I5C
5C
25C
45C
-AMBIENT TEMPERATURE-C

CURRENT-mA

INPUT CURRENT

2.

OUTPUT CURRENT

VS.

65C

85(

TEMPERATURE

10

V CE =5V
d

0.125"

wm

I.O

20

mA

.1

X
^S

.01

Om/

20m/V

O.I

J
.001

I
I

F =5finA

I,
J

'-"

NORMA .IZEDTO:
VC EI

\\

OOI

>

d-

20m A
125*
1

0.25

VCE - COLLECTOR TO EMITTER VOLTAGE -VOLTS

3.

OUTPUT CHARACTERISTICS

d DISTANCE

OUTPUT CURRENT

VS.

SHIELD LOCATION

1320

0.5

0.75

I.

d- SEPARATION DISTANCE- INCHES

5.

OUTPUT

VS.

DISTANd

Matched Emitter -Detector Pair HI9AI

"71

b,

The General Electric H19A1 is a matched emitter-detector pair

which consists of a gallium arsenide, infrared emitting diode in a
clear epoxy TO-92 type package and a silicon photo-transistor
also in a clear epoxy TO-92 type package.

SECTION X-X

LEAD PROFILE

Each emitter and detector

is

marked with

coded dot on c
Emitter and de-"r

a color

the top of the unit (see package illustration).

tector must be paired as follows:

Emitter

BLACK

ORANGE

WHITE

matched to
matched to
matched to

Detector
- BLUE
- RED
- VIOLET

Low

Side Looking

I/O Compatible with Integrated Circuits

Cost

MIN.

MAX.
5.33

NOM.

$b

.01

6 .01 9

bi

.0

5 NOM.

.381

<D

.16 5

Dt

.13 5

.095 .10 5

.1

2 5 .16 5

.040 .06
.050 NOM.
.500

.047

.1

4.95

3.43
2.42

2.66

4.19

20

067

.127

4.20

3.

NOTES

.482

.005
95

.1

70 .210

4.32
.4 07

El

FEATURES:

MAX.

MIN.
.1

MILLIMETERS

INCHES

SYMBOL

1.02

1.52

1.26

2.70

NOM.
-

3.04

1.20

1.70

NOTES:
1.

2.

CENTER LINE OF ACTIVE ELEMENT LOCATED

WITHIN .020"(.50mm) OF CENTER POINT
OF UNIT.
TWO LEADS. LEAD DIAMETER UNCONTROLLED
IN L1.

3.

AS MEASURED WITHIN .050"(l.27mm) OF

THE BODY OF UNIT.

absolute

maximum

ratings: (25C) (unless otherwise

specified)

Lead soldering Time

Storage and Operating Temperature -55C to 100C.

INFRARED EMITTING DIODE

(at

260C) 10 Seconds.

PHOTO-TRANSISTOR

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)
(100 /xs, 1% Duty Cycle)

*100

milliwatts

Power Dissipation

60

milliamps

Collector Current (Continuous)

ampere

Vceo
Veco

Reverse Voltage

**150

milliwatts

100

milliamps

30

volts

volts

volts

**Derate 2.0mW/C above 25C ambient

*Derate 1.3mW/C above 25C ambient.

individual electrical characteristics (25C)

INFRARED EMITTING DIODE

TYP. MAX.

Forward Voltage
(I F = 10mA)

1.2

PHOTO-TRANSISTOR

UNITS

Breakdown Voltage V( B r)ceo

volts

1.7

(I c

Reverse Current

10

amps

ju

(I E

50

Capacitance

(V = 0,f =

coupled
Note:

30

volts

volts

100

nA

= 100 nA)

(V CE = 10V,I F

MHz)

UNITS

V(br)eco

Collector Dark Current

pf

MAX.

= 1mA)

Breakdown Voltage

(VR = 2V)

MIN.

Iqeo

=O,H~O)

electrical characteristics (25 C)

Coupled

electrical characteristics are

measured

at a separation distance

with the faces of the emitter and detector parallel within 3

Output Current

(I F

Saturation Voltage

of .125" (3.17mm)

= 20mA, V CE = 10V)
= 20mA, I c = 25 juA)

(I F

Switching Speeds: Turn-On Time

Turn-Off Time

(t d

(t s

+ t r ) (VCE = 10V, I c = 2mA,

+ t f ) (VCE = 10V, I c = 2mA,
1321

RL
RL

= 100ft)
= 100ft)

MIN.

TYP.

MAX.

UNITS

100

U amps

0.2

0.4

volts
ju

sees

sees

H19A1

TYPICAL CHARACTERISTICS
IOC

.'

~~~"

^~-'

'*

10

OmA

F -I<

>IOOmA

IF

--- *
---

'
K

50mA

If

~-~

,--

UJ
C

""

Z>

-50

mA

~~i

(-

I.O

BOTTOM

CL

VIEW

;'
i

V CE -I0V

20 mA

IF

d-.i25"

20

(3.17mm)

m&

If

/
^

ni

*~

INPUT CURRENT
PULSE INPUT
CURRENT 1200 u. sec.

20mA

:
:

/
/

"

_
!

!
I

;
i

UJ

0.0

D.C.

J
T

_ i_

=IOmA

"
i

'

N DRMALIZED TO:

^_ ~~

vCE .iov

IF

i-__

20mA

D.C.

25-C

"'25" 13. 17 mm)

- D.C. INPUT CURRENT

'

PULSE INPUT CURRENT

<200tisec, 1% DUTY CYCLE

1
1

0.00
10

(00

OUTPUT CURRENT

VS.

25C

I5"C

-INPUT CURRENT-mA

I F

1.

55 "C

T-AMBIENT TEMPERATURE-

INPUT CURRENT

2.
IF

=IOOmA

OUTPUT CURRENT

TEMPERATURE

VS.

*(

//"

"1

i 1
i

=20mA

1.0

frh^

s
o:
o

NORMALIZtl)

ill

S0.I

F
d =

IU:

mA

,l25"(3.l7mm)

COLLECTOR TO EMITTER VOLTAGE- VOLTS

VCE 3.

20

100

10

OUTPUT CHARACTERISTICS

d = 0.125"

TO:

-H

(3.17mm)

20n'A
0=50% RESPONCE POINT

r-

F=

1.0

3.17mm)
*lil d

"Bjb--

\^

~
_

-Mil**

SIDE

VIEW

0.1

~"^^

" NORMAL IZED TO

V CE =I */
I

\ \.

NORMALIZED
Vr F =IOV

\ \l

VIEW

REFER/*NCE LINE

REPRE SENTS THE 50%

RESPONSE POINT

"**.^

^^-^

If50mA

~*

)00l
0.25
6.3

0.5

0.75

1.0

12.7

.19

25.4

050

INCHES
MILLIMETERS

29

SEPARATION DISTANCE
4.

OUTPUT

VS.

-.025
.63

+.025

+.050

.63

1.27

DISTANCE RELATIVE TO THE

DISTANCE DISTRIBUTION

5.

1322

OUTPUT CURRENT

VS.

+.075 INCHE
1.9

MM

50% RESPONSE POINT

SHIELD LOCATION

55.98 3/76

Matched Emitter - Detector Pair H F9BI

SECTION X-X

LEAD PROFILE

The General Electric H19B1 is a matched emitter-detector pair

which consists of a gallium arsenide, infrared emitting diode in a
clear epoxy TO-92 type package and a silicon photo-darlington
also in a clear epoxy TO-92 type package.
Each emitter and detector is marked with a color coded dot on s
the top of the unit (see package illustration). Emitter and de-T
tector must be paired as follows:

MILLIMETERS

INCHES

SYMBOL
A

MIN.

70 .210

.1

4>b

.01

bi

.0

5 NOM.

.16 5

Dt

.13 5

.01

.381

.1

3.43
2.4 2

2.66

4.19

.095 .10 5

BROWN
YELLOW
GREEN

.1

BLACK

WHITE

matched to
matched to
matched to

El

F
L

FEATURES:

.127
4.95

2 5 .16 5

3.1

.040 .06
.050 NOM.
.500
20
.047 .0 6 7

1.52

1.26

2.70

NOM.
-

3.04

1.

1.02

.1

NOM.

4.20

ORANGE

NOTES

.482

9 5

Detector

MAX.
5.33

.00 5

Emitter

MIN.

4.32
.4 07

MAX.

20

1.70

NOTES:

Low

Side Looking

I/O Compatible with Integrated Circuits

CENTER LINE OF ACTIVE ELEMENT LOCATED

WITHIN.020"(.50mm) OF CENTER POINT
OF UNIT,
2 TWO LEADS. LEAD DIAMETER UNCONTROLLED

Cost

IN L1.
3.

maximum

absolute

ratings: (25C)

(unless otherwise specified)

Storage and Operating Temperature -55C to 100C. Lead Soldering

l%Duty

(100 /is,

(at

260 C) 10 Seconds.

PHOTO-TRANSISTOR

INFRARED EMITTING DIODE

Power Dissipation
Forward Current (Continuous)
Forward Current (Peak)

Time

AS MEASURED WITHIN .050"(l.27mm) OF THE

BODY OF UNIT.

*100

milliwatts

Power Dissipation

60

milliamps

Collector Current (Continuous)

ampere

Vceo
Veco

Cycle)

**150
100

milliwatts

milliamps

25

volts

volts

Reverse Voltage
** Derate

*Derate 1.33mW/C above 25C ambient.

2.0mW/C above 25C ambient.

individual electrical characteristics (25C)

PHOTO-DARLINGTON
INFRARED EMITTING DIODE TYP. MAX. UNITS
Breakdown Voltage V(br)ceo
volts
1.2
1.7
Forward Voltage
(I F

= 10mA)

10

ju

50

pf

amps

(Vr = 2V)

coupled
Note:

MAX.

UNITS

25

volts

volts

100

nA

(Ic

Reverse Current

Capacitance
(V = 0,f =

= 1mA)
Breakdown Voltage V (BR ) EC o
(I E = 100/iA)
Collector Dark Current I CEO
(V CE = 10V, I F = 0,H 0)

MIN.

MHz)

electrical characteristics (25C)

Coupled electrical characteristics are measured at a separation distance of .125" (3.17mm)

with the faces of the emitter and detector parallel within 3.
MIN.

= 20mA, V CE = 5V)
Saturation Voltage (I F = 20mA, I c = 0.5mA)
Turn-On Time (t d + t r ) (VCE = 10V, I c = 2mA,
Switching Speeds:
Turn-Off Time (t s + t f ) (VCE = 10V, I c = 2mA,
Output Current

MAX.

1.2

RL
RL

UNITS

H amps

2000

(I F

1323

TYP.

volts

= 1002)

150

li

sees

= 100H)

150

sees

TYPICAL CHARACTERIST
ST CS
I

=20m>\

0.5

=IOmA

IF

0.05
IF

NORMALIZED TO
V C E =5V
IF
=20mA
TA

=5mA

=25C

=125"

.005

(3.17mm

0.0001

0.00I

5
I

1.

20

10

50

oo

-I5-C

TA

-INPUT CURRENT-mA

OUTPUT CURRENT

CURRENT

VS. INPUT

OUTPUT CURRENT

2.
r

1
i
;

25C

-AMBIENT TEMPERATURE

\!k

VS.

55C
- C

TEMPERATURE

\\\
1

~~h

1.0

_U-

--J-

Z^{

,^""l7=20mA
\i

Omt

//

0.1

F =5rrcA

NORMA JZEDTO:
"

VCE"
If - 20m A
d* 125' (

001
V CE -

3.

I7n 5L>

COLLECTOR TO EMITTER VOLTAGE -VOLTS

OUTPUT CHARACTERISTICS

If=20 mA
= 50*/. RESPONSE POINT

'(3.17mm)

--3IE--

3.

ilr
--PIQ-TIt

TOP
SIDE
VIEW
VIEW
REFERANCE LINE
0.1

RESPONSE POINT

0.01

I
0.001

050
.27

-.025

>.025

*.050

.63

.63

1.27

.075 INCHES
1.9

0.25

MM

0.5

127

6.3

0.75
19.

1.0

DISTANCE RELATIVE TO THE

4.

OUTPUT CURRENT

VS.

50% RESPONSE

POINT

SHIELD LOCATION

1324

5.

OUTPUT

VS.

INCHES

25.4 MILLIME

SEPARATION DISTANCE

DISTANCE DISTRIBUTION

Photon Coupled Isolator H74A1

Ga As

Infrared Emitting Diode

TTL

& NPN

Silicon Photo-Transistor

Interface

Electric H74A1 provides logic to logic optical interfacing of TTL gates

with guaranteed level compatibility in practical specified circuits. The H74A1 is a
transistor output photo-coupled isolator specifically designed to eliminate ground

The General

when two distinct logic systems are coupled.

74H00 and 74S00 logic gates over the full TTL

loop cross talk and reflection problems

It

is

guaranteed to couple 7400,

temperature and voltage ranges.

absolute

maximum

ratings: (25C)

(unless otherwise specified)

B-^

INFRARED EMITTING DIODE

T A = 25C

Power Dissipation
Power Dissipation

Tc = 25C

*100
*100

milliwatts
I

jT

VOS

PLANE

(T c indicates collector lead temperature 1/32" from case)

Forward Current (Continuous)

Forward Current (Peak)
(Pulse width 1/isec 300 pps)

60

Reverse Voltage

*Derate

milliamps

ampere

volts

-I

milliwatts

jj, jj.

^fh>

K-io
i

INCH
MAX.

SYMBOL

2.2mW/C above 25 C.

.3

e
c
D
E
F

.340
6 .0 2C
.0
.20C
.040 .07 C

.0

3
.30

9C

.008
.100

.1

MIN.

.0

REF

.406

00

.1

.225

6
.305

.2

03

2.5 4
1

B.64
.50 8
5.0 8
1.78
2.79
2.1

.3

.1

85

.2

80

2
3

5
3

.375

MAX

18.89

1.01
C 2 28

.01 5

PHOTO-TRANSISTOR

REF

MILLIMETER

8.38
7. 6 2

.06 5

M
N

H
J

.3

5
3

9.53
2.54
5.7
1

.47 C

7.12

NOTES:

T A = 25C

Power Dissipation
Power Dissipation

Tc

25C

**300
***500

milliwatts

1.

terminal

milliwatts

(T c indicates collector lead temperature 1/32" from case)

15

volts

15

volts

Collector Current (Continuous)

50

lead centers.
Overall installed dimension.

4 These measurement*

are

made from

the sell-

ing plane.
5.

Vceo
Vcbo
Veco

2. Installed position
3.

5.5

There shall be a permanent indication of terminal orientation in the Quadrant adjacent to

Four places.

volts

milliamps

**Derate 6.7mW/C above 25C.

***Detate ll.lmW/C above 25 C.

TOTAL DEVICE
Storage Temperature -55 to 150C

to 70C
260C) 10 seconds
Surge Isolation Voltage (Input to Output)
1060V(RMS)
1500V(p eak)
Steady-State Isolation Voltage (Input to Output)
660V( RMS )
950V(p eak)

Operating Temperature

Lead Soldering Time

(at

1325

H17A1
Electrical Characteristics of

H74A1*

*A11 specifications refer to the following bias configuration (Figure 1) over the full operating temperature (0C to
logic supply voltage range (4.5 to

70 C) and

5.5V D c) unless otherwise noted.

390 1 5%
H74A

-ov cc ,
2.4KS%<

RECEIVING

*K

GATE
SEE TABLE I
V|

TRANSMITTING
SATE
SEE TABLE I

6
NC

Figure

1.

H74A1 BIAS

CI

RCUIT

Vi (0), Receiving Gate For V OUT(0) from Transmitting Gate Vi (1), Receiving Gate for V OU t(i) from Transmitting Gate tp
(0), Transmitting Gate to Receiving Gate Propagation Time (1), Transmitting

Gate to Receiving Gate Propagation Time

Isolation Resistance (Input to Output = 500V
DC )
Input to Output Capacitance (Input to Output Voltage = O, f =
tp

TABLE

MHz)

V UT <D
V UT (0)

Min.

4.5V

4.5V

Min.

Max.

-0.4mA

5.5V

Vin

5.5V

1.0mA

Max.

2.4

12.0mA

VlN CD
(0)

Max.

20

//sec.

Typ.

4
100

/usee.

Typ.

gigaohms Min.

pF Max.

pvee

LIMITS

s INK

IN

Min.

VMin.

I.

TEST CONDITIONS, FIGURE

Vcc
Min.
Max.

VMax.

2.4

2.5

CHARACTERISTICS REQUIRED OF TTL GATES WHICH ARE

TO BE INTERFACED BY H74A1
PARAMETER

0.8

Volts
0.4

2.0

-1.6mA

=0

Units

Volts

Volts
Figure

1326

f
Vwt

Volts
0.8

-lilrm

Vin

2.

Photon Coupled Isolator H74C1, H74C2

Ga As

Infrared Emitting Diode

TTL

&

Light Activated

SCR

SYMBOL

Interface

up to 400V DC power circuits. They are guaranteed and specified to operate over
voltage and temperature ranges using standard tolerance components.

maximum

J
K

H"k

N
P
R
S

Hf|~

TTL

4C
.0 9C
.0

-0

.1

.406

2C

200
0?C
1

C 2

28

.0

03

3
1

.3

.225

.305

2.5 4

5
3

.375

00

.1

.2

5-0 8

2.79
2.1 6

.08 5

.008 .01 2
.100

8.64
.50 6
1.78

1.01

9.53

.1

65

2.54

.2

80

5.7

.47 C

7.12

There shall be a permanent Indication of term

quadrant adjacent to
terminal

2. Installed position

lead centers.
Overall installed dimension.

These measurements ore made from the setting plane.

5.

Four places.

PHOTO - SCR
Peak Forward Voltage

*100 milliwatts
60 milliamps
ampere
1

Power Dissipation
Forward Current (Continuous)
Forward Current

1% duty

.340
.0

inal orientation in the

(unless otherwise specified)

INFRARED EMITTING DIODE

(Peak 100/usec

NOTES:

4.

ratings: (25C)

B
C
D
E
F

.300

3.

absolute

.3

G
H

The General Electric H74C1 and H74C2 are gallium arsenide infrared emitting diodes
coupled with light activated silicon controlled rectifiers in a dual in-line package. They
are specifically designed to operate from TTL logic inputs and allow control of 120
or 240V AC power with 7400, 74H00 and 74S00 series logic gates. It can also control

INCH
MILLIMETER
MAX. NOTES
MAX.
MIN.
.3 5
8.38 18.89
REF 7. 6 2
REF
2

MIN

200
400
300

H74C1
H74C2

RMS

Forward Current
Forward Current
(Peak, lOOAtsec 1% duty cycle)

cycle)

6 volts

Reverse Voltage

Derate 1.33 mW/C above 25 C ambient.

volts

volts

milliamps

10

amperes

Surge Current (10 msec)

amperes

Reverse Gate Voltage

Power Dissipation (25 C Ambient)

volts

Power Dissipation (25C Case)

** Derate 5.3
***Derate 13.3

mW/C
mW/C

** 400

milliwatts

***1000

milliwatts

above 25 C ambient.
above 25C case.

H74C'

electrical characteristics of

*A11 specifications refer to the following bias configuration (Figure 1) over the full operating temperature (0C to 70C) and logic
supply voltage range (4.5 to 5.5 DC ) unless otherwise noted.

Leakage, Logic Gate

50

ut(i) Both Directions

Drop, Anode Positive, Logic Gate V O ut(0)> Itm =
Coupled dv/dt to Trigger, DC to AC (25)

SCR
SCR

250mA

1-3

500

Capacitance (Input to Output Voltage = O, f = 1 MHz)

Isolation Resistance (Input to Output Voltage = 500V DC )

Turn-On Time of SCR;

V OUT(0

),

100

200

Input to Output (25C)

juA Max.

VMax.
V//xsec. Min.

pF Max.
Gigaohms Min
Max.

/usee.

Vdc = 5.5V

Figure

+o

LOGIC 8ATE^
SEE TABLE I

1.

H74C BIAS CIRCUIT

1327

F igure

2.

H74C1, H74C2

maximum

absolute

SCR Current
Operating Temperature Range
Operating Voltage Range, Vdc
H

Operating
5 Voltage
e Range,
B

See Figure 4

0C iv 70C
4 5 to 5.5V DC
50 t0 200 V P k
50 to 400 V p k
-55C to 150C

ratings-total device
1.

Characteristics required of

l^\

H74C2

'

TABLE

Storage Temperature Range

Lead Soldering Time (at 260C)

10

sec.

PARAMETER

Max.

Surge Isolation Voltage

VoutO)
VqutW)

TTL

which

gate

to be interfaced with

is

LIMITS

TEST CONDITIONS, FIGURE 2

V CC
sink
in
MAX. MIN. MAX.
MAX.
MIN.
MIN.

MIN. MAX.

-0.4mA

4.5V

UNITS
Volts

2.4

12.0mA

4.5V

H74

0.4

Volts

(Input to Output,)

V (peak) 1060V RMS

1500

Steady-State Isolation Voltage

(Input to Output)

V (peak)

950

660 V

RMS

TYPICAL CHARACTERISTICS OF OUTPUT

600
400

MEASURED AT THE WIDEST PORTION

NOTE: (ULEAD TEMPERATURE

OF THE SCR ANODE LEAD

(2JAMBIENT TEMPERATURE MEASURED AT A POINT
\/Z" FROM THE DEVICE

JUNCTION -.
TO AMBIENT N,
JUNCTION

(SCR)

--*

<%
^
hi

<o

1.0
uj

'
1

004

002

001

<<
2

TIME-SECONDS

0.5

cr

FIGURE

2.

MAXIMUM TRANSIENT THERMAL IMPEDANCI

56KS

\\

II
ao

\ \\
\

25
T

FIGURE

1.

50
70
-AMBIENT TEMPERATURE-C

100

\\

TEMPERATURE

dv/dt VS.

\\

so r

AMBIENT TEMP
HALF-SINE WAVE
AVG

A\

VAK .400V

AMBTEMP^

\
\

ANODE LEAD TEMP

1/2 SINE WAVE AVERAGE

DC CURRENT
2

NORMALIZED TO
VAK 50V

0.4

0.6

ON STATE CURRENT

FIGURE

A -25-C

4.

AMPERES

ON-STATE CURRENT

VS.

MAXIMUM ALLOWABLE TEMPERATURE

25
50
75
T -AMBIENT TEMPERATURE--C

/?

ft

3.

\
S.

/50 V

FIGURE

\
\

\
\

v^ -ANODE LEA0 TEMP

DC CURRENT

OFF-STATE FORWARD CURRENT VS. TEMPERATURE

.6

7f

500

A
t

.2

.06

[T

.06

-JUNCTION TEMPERATURE = 25"C

.04

[j~

JUN CTI DN TEH PERATURE = IOOC

50

56K

O
x
X

VAK

-40

20

40

50V

60 70 80

c;
"in

T -AMBIENT TEMPERATURE--C
A
5.

HOLDING CURRENT

VS.

TO

"S

OR WAF D
.TAC

10

FIGURE

:reas

BR EAKOV " R VO

100

2.0

TEMPERATURE

FIGURE
1328

6.

-0N-STATE VOLTAGE

3.0
-

VOLTS

ON-STATE CHARACTERISTICS

!'r

*-l

"if''''

C ...*;**

SCR

L81U911 (Diamond Base*)

L8.9

The L8, L9 Light Activated SCR's are

basically Silicon Controlled Rectifiers with incident light taking the

place of (or adding to) an electrical gate current. Thus it is a photo-operated device that is truly a switch.
It features optional gate triggering inputs; i.e., from either an isolated light source or direct electrical
supply. The former trigger technique offers a range of light trigger intensity with varying gate bias. The L8,
L9 is expected to be particularly useful in such applications as:

Sorting
Precision Indexing

Optical logic control

Counting

OUTLINE

ftterone

is taitrtjftwf

to

Meter Relays

Explosion proff isolated switches

Static Relays

automatic ton-

dftBg. The MmltoB is actual diameter

Him Bus him &aS not eased .010.
Heaswed Jrim tn*xf &neier of the

DRAWING

tSTM spoofed

lead

(gamete

applies

the

._sl*:.9M mJ JSQ from thetase

....

"seat Betteai
.921 Sstneter

;SS6
is

flraaHwm ot
Outside of these

aid

Mm

1.5

.v ,8* tatf:#WSr:is.flot
may be
holes

cestric
fl)

($
ffil

inserted

wtW lead

Leads
931

&m&
371 In*

can-

hofeeircie.

#Mfl saw, sTo steel

US bote (#31 d4

eootroited.

without
enters

***

long

tooHi tocfwrMiw, tfn steel

{7)#M0^,st'Steet
gg #2-5$ sera*, st'n Steel %* tag
#) ShouMet wshw, Men
UR-IBea:aa*to,:a03:.tW*

.sssai

ttl)ja935iiofel#Aftt)

{HJ#256iwt, (rnstee)
.f'{hBSioi:i Jaslws:

EHAMONO BASE WSULATCD

Tyjmt

Working and Repetitive Pea*

Peak Forward Blocking Voltage,

-65'C to +100'C
V,x. T,
56,000 Ohms Maximum
Rok

Revert* Voltage, Vkom <> and

-6SC to 100'C
V BO m ""' T,

Non-Repetitive Peak Reverse

Voltage, Vkoh <o-rei (< S
65C to +100'C
MMisec.) T,

L8U, L9U

25 Volts

25 Volts

40 Volts

L8F, L9F

50 Volts

50 Volts

75 Volts

L8A, L9A

100 Volts

100 Volts

150 Volts

L8G, L9G

150 Volts

150 Volts

225 Volts

L8B, L9B

200 Volts

200 Volts

300 Volts

ordering the Diamond Base versions, be sure to include the proper voltage letter symbol. For example: The
25 volt, Diamond Base version of the L8U is type number L811U.

tWhen

Peak Forward Voltage, PFV

RMS Forward Current, On-state
Average Forward Current, On-state_

_300

Volts

_1.6

Amperes

.Depends on conduction

Peak One Cycle Surge Forward Current (Non-repetitive),

Ft (for fusing)
Peak Forward Gate Power Dissipation, P GM
Average Forward Gate Power Dissipation, P ( AV)_
Peak Gate Voltage, Forward & Reverse, V (iFM & V GK m
(;

IFm

angle (see charts 11, 12, 15, & 16)

Amperes
15
(surge)
Ampere 2 seconds
0- 5
(for times < 1.5 milliseconds)
_0.01

Watt
Watt

_6

Volts

0.1

-65Cto+150C
Storage Temperature, T tB_
-65C to +100C
Operating Temperature
Interval
Time
Peak Non-recurrent Surge Forward Current During Turn-on
Amperes
40
(Current Rise Time < 5 Microseconds)
that they ore soldered to a diamond base heat
The L811 and 1911 series are identical to the L8 and 19 respectively except
Drawings.
Outline
Page
for
and
4
Curves,
for Transient Thermal Resistance and Current

1329

sink.

See charts

14, 15,

& 16

L811,L911

L8, 9

CHARACTERISTICS
Symbol

Tott

Forward Breakover Voltage

L8U, L9U
L8F,
L8A,
L8G,
L8B,

Typ.

Max.

V(BR) FX

Units

Volts
25
50
100
150
200

L9F
L9A
L9G
L9B

Forward Blocking Current

Min.

Test Condition*

= -65C to +100C
Rgk = 56,000 Ohms
Sinusoidal Waveform, 60 CPS.
H, <0.02 MW/CM for L9 types
H. <0.08 MW/CM for L8 types
Tj

Ux

2.0

10

^amperes

= Rated Vfxm, Rr.K = 56,000 Ohms

= +25C, H, <0.02 or 0.08 MW/CM'
Vrx = Rated Vfxm, Rgk = 56,000 Ohms
Tj = + 100C, H, <0.02 or 0.08 MW/CM
Vkx = Rated VnoMir,,., Rgk = 56,000 Ohms
Tj = +25C, H. <0.02 or 0.08 MW/CM
Vx = Rated V,om, Rok = 56,000 Ohms
Tj = +100C,H<0.02 or 0.08 MW/CM
Vrx = 6 Vdc, Rck = 56,000 Ohms,
R,. = 100 Ohms, T, = +25C, H. =
Vrx = 6 Vdc, R K = 56,000 Ohms,
Ri. = 100 Ohms, Tj = + 100C, H =
Vrx = 6 Vdc, Rgk = 56,000 Ohms,
Ri. = 100 Ohms, Tj = -65C, H. =
Vrx = 6 Vdc, Rgk = 56,000 Ohms,
R,. = 100 Ohms, Tj = +25C, H, =
Vrx = 6 Vdc, Rgk = 56,000 Ohms,
Ri. = 100 Ohms, Tj = + 100C, H. =
Vrx = 6 Vdc, Rgk = 56,000 Ohms,
R,. = 100 Ohms, Tj = -65C, H, =
Vrx = Rated Vrx M Rgk = 56,000 Ohms,
Ri. = 100 Ohms, Tj = +100C, H. =
Tj = +25C, Ifm = 1 ampere
V

h-x

Tj

40

100

/iamperes

Reverse Blocking Current

Ux

2.0

10

^amperes

40

100

juamperes

Gate Supply Trigger

Current

20

220

^amperes

10

150

^amperes

30

370

^amperes

0.5

0.8

Vdc

0.2

0.6

Vdc

0.7

1.0

Vdc

0.05

0.15

Igs

Gate Trigger Voltage

Vgt

Peak On-Voltage

0.3

V,M

1.2

Vdc
1.4

Volts

Single half sine

wave

pulse,

2.0 milliseconds wide.

Holding Current

Ihx

20

75

560

^amperes

= +25C, Vrx = 5 Vdc, H. =

= 56,000 Ohms
Tj = +100C, v F x = 5 Vdc, H. =
Rgk = 56,000 Ohms
Tj = -65C, Vrx = 5 Vdc, H. =
Rgk = 56,000 Ohms
Vrx = 6 Vdc, Ri. = 100 Ohms
Rgk = 56,000 Ohms. Light Source
Tj

Rgk

Effective Irradiance
to

10

40

450

^amperes

30

180

750

^amperes

Het

Milliwatts/CM 2

Trigger

Perpendicular to Plane of Header.

L8
L9

0.68
0.68

5.0
2.0

10.0
4.2

Tj

= +25C

L8
L9

0.15
0.15

2.0
0.7

6.0
2.5

Tj

= +100C

L8
L9

0.9
0.9

15.0

50.0
20.0

Tj

= 65C

L8

Tj = +100"C, Rgk = 56,000 Ohms,

Vrx = Rated Vfxm, Rl = 500 Ohms,
Light Source Perpendicular to
Plane of Header.

0.02
0.02

L9

Rate of Rise of Applied

Forward Voltage

4.0

dv/dt

L8U, L9U
L8F, L9F
L8A, L9A
L8G, L9G
L8B, L9B

Volts/jisec
0.01
0.02
0.05
0.07
0.09

Delay Time

Rise Time

t.

= +100C,

Rgk

= 56,000 Ohms

= 25 Volts
= 50 Volts
Vfxm = 100 Volts
Vkxm = 150 Volts
Vfxm = 200 Volts

0.02
0.04
0.07
0.10
0.12
]

Tj

VrxM

Vrx.M

to 100

Msec

See Application Note 200.34

0.6

Msec

= +25C, Ir = 1.0 Ampere,

= Rated Vfxm
Tj = +100C, Ifm = 1.0 Ampere,
I (recovery) = 1.0 Ampere,
Tj

Vrx

Circuit-Commutated
Turn-off Time

40

Msec

Reapplied VrxM^Rated Vfxm,

Rate of Rise of Reapplied.
Vfxm = 20 Volts Per ^sec,
Rgk = 100 Ohms, H =

1330

L8,9

L811,L911

X*'
28

SHADED AREA REPRESENTS THE LOCUS OF POSSIBLE TRIGGERING

POINTS AT JUNCTION TEMPERATURES FROM -6S'C TO IOO"C
EFFECTIVE IRRADIANCE ZERO
GATE TO CATHODE RESISTANCE S6000 OHMS.
APPLIED ANODE VOLTAGE 6 VOLTS D.C

2.6
12)

(3)

24

(4)

22
2.0
1.8

1.6

0*C

-JUNCTION TEMPERATURE 28'C

NOTE. VOLTAGE OK OP M EASUREO T

INCH FROM
WNTONU .ADS
fcOTTOM Of CAM

03

02
\

\
INCREASES TO TORWARO

BREAKOVER

06

0.7

08

ELECTRICAL GATE TRIGGERING CHARACTERISTICS

2.

VOLTAflE

LO
iO
30
4.0
MSTANTANEOUS FORWARO VOLTMC DROP-VOLTS

1.

05

0.4

INSTANTANEOUS GATE SUPPLY CURRENT-MILLIAMPERES

MAXIMUM FORWARD

3.0

CHARACTERISTICS,

ON-STATE
60

a oe
5

0.6

0.6

S OS

SHADED AREA REPRESENTS THE LOCUS OF

POSSIBLE TRIGGERING POINTS FROM -65"C
NOTES:

II)

12)

IS)

14)

TO lOO'C.

SHADED ARE* REPRESENTS THE

LOCUS OF POSSIBLE TRIGGERING

0.1
(2)

0.08

POINTS FROM -65"C TO tlOO'C

APPLIED ANODE VOLTAGE- 6 VOLTS D.C.
GATE TO CATHODE RESISTANCE -SGvOOO OHMS?
LIGHT SOURCE PERPENOICULAR TO PLANE

(3)

0.06

(4)

APPLIED ANODE VOLTAGE- 6 VOLTS D.C.

GATE TO CATHODE RESISTANCE- 56,000 OHMS
LIGHT SOURCE PERPENDICULAR TO PLANE

OF HEADER
0.04

OF HEADER

008
006
10

-60

-40

-20

20

40

JUNCTION TEMPERATURE
3.

L8 LIGHT
NOTES:

(I)

12)

60
--

80

-20
40
60
20
JUNCTION TEMPERATURE -*C

-40

80

LIGHT TRIGGERING CHARACTERISTICS

4.

L9

jure

CURVE DEPICTS RELATIVE RESPONSE OP

THE U9HT ACTIVATED SCR AS A FUNCTION
Of THE VJtVELENGTH Of THE INCIDENT

100

TRIGGERING CHARACTERISTICS

IRRADIATION FROM TUNGSTEN SOURCE

CURVE DEPICTS TYPICAL VARIATION OF TRIGGERING
SENSITIVITY WITH ANGLE OF IRRADIATION

ENEMY

\
\

V
^

WAVELENGTH -M ICRONS

5.

TYPICAL

ANGULAR RESPONSE

6.

1331

TYPICAL SPECTRAL RESPONSE

<

L8,9

L811,L911
^

!!|

THIS CURVE DEFINES THE RATIO OF

EFFECTIVE IRRADIANCE TO TK 3GER
WITH A SPECIFIC RESISTOR FROM

NOTE-.

GATE TO CATHODE TO THE

EFFECTIVE IRRADIANCE TO
TRIGGER WITH 56,000 OHMS
FROM GATE TO CATHODE.

O
5
IE

THIS CURVE DEFINES THE RATIO OF EFFECTIVE IRRADIANCE

TO TRtOOER WITH ANY APPLIED ANODE VOLTAGE TO THE
EFFECTIVE IRRAOIANCE TO TRtOOER WITH VOLTS APPLIED
ANODE VOLTAGE.

*fl
4000

6000

M8TANTANEOUS APPUEO ANODE VOLTASE -VOLTS

40000 60000

20000

IOOO0

8000

GATE TO CATHODE RESISTANCE-OHMS

TYPICAL VARIATION OF LIGHT SENSITIVITY

TYPICAL VARIATION OF LIGHT SENSITIVITY

WITH GATE TO CATHODE RESISTANCE

WITH ANODE VOLTAGE

1.0

"S

^~~

MAXIMUM AT -65k C

0.8

MAXIMUM AT +25*C

MAXIMUM AT +IOO*C
NOTES

(1)

(2)

ANODE SUPPLY VOLTAGE

5 Vdc MINIMUM
TEMPERATURES SHOWN ARE
JUNCTION TEMPERATURES.

0.2

wt IMU *

N> MINIMI M

AT +25C> v
1

0.08

AT-65C

g 006

o
-i
o
1

MINIMUM AT

0.04

IOO*CN

0.02

0.01

1>
4000

6000

20000

10000

8000

40000 60000

GATE TO CATHODE RESISTANCE-OHMS

VARIATION OF HOLDING CURRENT WITH GATE

TO CATHODE RESISTANCE
100
D

>

NOTE; JUNCTION TEMPERATURE

100'C

NO!res

a:

!)

RESISTIVE OR INDUCTIVE LOAD 60 CPS

CELL LEAD MOUNTED, NO HEA TSINKIN6.

5 80
K

bj

ISO*

^S^

70

IW

i 60

90"/

\,

50

40

Ul

60-

CONDUCTION ANQLE >30*

/j

/)

SO

l0"

Of

04

01

S*0"

CONDUCTION ANGLE

20

io

I.Z

360*

180"

J_L_

\^1

\ \ \'
\

CONDUCTION ANGLE

30*

^-CON 3UCTI0N

\\K

60' o-

DC

.o-

|I0
1

10

\o-

14

0.1

0.2

04

0.8

averaoc forward current-anperc9

AVERAGE FORWARD CURRENT-AMPERES

10.

FORWARD POWER DISSIPATION FOR HALF WAVE

RECTIFIED SINE

MAXIMUM AMBIENT TEMPERATURE FOR

WAVE RECTIFIED SINE WAVE

WAVE
1332

HALF

L8,9
1

NOTES

(1

ASSISTIVE OR INDUCTIVE LOAO,

(2)

CASE TEMPERATURE MEASUREO AT THE

v_

60CPS
Tl

L811, L911

^ CONDUCTION

ANGLE

CONDUCTION
ANGLE SO'
SO-'

90*
1

120*

ISO5

'^
i

0.6

0.6

0.4

0.2

12

1.0

1.4

AVERAGE FORWARD CURRENT-AMPERES

12.

MAXIMUM

CASE TEMPERATURE FOR HALF

RECTIFIED SINE

0.001

001

13.

IN

SECONDS

MAXIMUM TRANSIENT THERMAL

RESISTANCE

i.o

0.1

TIME
14.

10.0

1.0

0.1

TIME

WAVE

WAVE

IN

SECONOS

MAXIMUM TRANSIENT THERMAL

RESISTANCE

(Diamond Base)
100

90

_K
CONDUCTION \.
ANQLE -SO**

ac

-^.NC

80*

90

120*

LOAO, 60

180*

US

CPS.

CASE TEMPERATURE
MEASURED AT THE TAB.

u>

en

I"
1

E
X

"ri

io

ANGLE
i

AVERAGE FORWARD CURRENT-AMPERES

15.

AVERAGE FORWARO CURRENT - AMPERES

MAXIMUM AMBIENT TEMPERATURE FOR HALF WAVE

RECTIFIED SINE WAVE (Diamond Base)

16.

1333

MAXIMUM CASE TEMPERATURE FOR HALF WAVE

RECTIFIED SINE WAVE (Diamond Base)

SYMBOLS AND DEFINITION OF TERMS

Symbol
V, B1U FX

Definition

Forward Breakover Voltage, Gat* Terminal Returned to the Cathode Terminal Through An Impedance and/or Bias Voltage. The
forward breakover voltage is the maximum positive voltage from anode-to-cathode for which the small-signal
resistance is zero.
Pooh Forward Blocking Voltage Rating, Gate T.rminal Returned to the Cathode Terminal Through An Impedance and/or Bias
Voltage. The peak forward blocking voltage rating is the maximum allowable instantaneous value of forward
blocking voltage including transient voltages which will not switch the SCR to the on-state.
'* Forward Blocking Voltage, Gate Terminal Returned to the Cathode Terminal Through An Impedance and/or Bias Voltage. The
peak forward blocking voltage is the peak forward voltage when the SCR is in the off-state.
f rWOrd
? < ,)<in ? Vo,,aa ' Ga, Terminal Returned to the Cathode Terminal Through An Impedance and/or Bias Voltage. The
5S. ?
DC
forward !blocking
voltage is the DC forward voltage when the SCR is in the off -state.
Pook On-Voltoge. The peak on-voltage is the peak forward voltage for a stated forward current when the SCR
is in the on-state.
Rev,rM Blcking Current, Gate Terminal Returned to the Cathode Terminal Through An Impedance and/or Bias Voltage. The
5S,
DC
reverse blocking current is the DC current through the collector junction when the SCR is in the reverse
blocking state for a stated arfode-to-cathode voltage.
Working Peak Reverse Voltage Rating, Gate Open. The working peak reverse voltage rating is the maximum allowable
instantaneous value of the reverse voltage, excluding all repetitive and non-repetitive transient voltages which
occur across the SCR.
Repetitive Peak Reverse Voltage Rating, Gate Open. The repetitive peak reverse voltage rating is the maximum allowable instantaneous value of the reverse voltage, including all repetitive transient voltages, but excluding all
non-repetitive transient voltages, which occur across the SCR.
Peak Forward Voltage Rating. The peak forward voltage rating is the maximum allowable instantaneous value of

VpxM
VpxM
VkxVkji

lux

Vikim (wkg)

Vhom

(rep)

PFV

forward voltage which may be applied anode-to-cathode. It may cause switching to the on-state. If switching
occurs at a voltage lower than the PFV value, no damage to the device will result. If the PFV value is exceeded,
and if switching occurs, the device may be permanently damaged.
Peak Reverse Recovery Current, The peak reverse recovery current is the peak reverse current obtained when instantaneously switching from a forward current condition to a reverse voltage in a given circuit.
DC Forward Blocking Current, Gate Terminal Returned to the Cathode Terminal Through An Impedance and/or Bias Voltage. The
DC forward blocking current is the DC current through the collector junction
when the SCR is in the off-state
for a stated anode-to-cathode voltage.
Peak Forward Current, On-State. The peak forward current is the peak current through the collector junction for
a positive anode-to-cathode voltage.

(recovery)

In

Ifx

Ij-M

Holding Current. Gate Terminal Returned to the Cathode Terminal Through An Impedance and/or
Bias Voltage. The holding
is the minimum current through the collector junction required to maintain the SCR in the on-state
for stated conditions and load.

'"X

current

Pgm

Peak Gate Power Dissipation Rating. The peak gate power dissipation rating is the maximum allowable instantaneous
value of gate power dissipation between gate and cathode.
P" " *' Time. The rise time of a pulse is the time interval durirg which the amplitude of its leading edge is
increasing from 10 to 90 percent of the maximum amplitude.
Circuit-Commutated Turn-Off Time. The eircuit-commutated turn-off time is the time interval between the time when
the forward current decreases to zero and the time when the device voltage reaches zero and is rising to a stated
value of forward blocking voltage at a stated rate of rise without turning on during switching in the external
anode circuit from the on-state to the off -state under stated conditions.
1

*r

tff

T*tj:

Storage Temperature.

T.|

Junction Temperature.

Rl
"gk

.Load Resistor.

If
km (surge)

Vkx
ov/clt.

Gate-To-Cathode Resistance. External resistance connected between gate and cathode leads.
Forward Current, On State. The forward current is the current through the collector junction for
a positive anodeto-cathode voltage.
Peak Rectangular Surge Forward Current, On State. The peak rectangular surge forward current is
the maximum
forward current of 5 milliseconds duration in a resistive load system. The surge may be preceded and followed
by maximum rated voltage, current, and junction temperature conditions, and maximum allowable gate
power
may be concurrently dissipated.
DC Reverse Voltage, Gate Terminal Returned to the Cathode Terminal Through An Impedance and/or Bias Voltage. The
DC
reverse voltage is the DC negative anode-to-cathode voltage.
*ote of Rise of Applied Forward Voltage. As specified for the SCR, this value will not
trigger the SCR below rated
voltage under stated conditions. This rate of rise is defined as the slope of a straight
line starting at zero
anode voltage and extending through the one time constant (t) point on an exponentially rising
voltage
0.632
rated
voltage
x
.

dv/dt
l-t.

squared t Rating. This is the maximum allowable forward non-recurring overcurrent

capability for pulse durations of greater than 1.5 milliseconds. I is in
amperes, and t is pulse duration in seconds. The same
conditions as listed above for I lM (surge) apply.
(non-rep)_Non-Repetitive Peak Reverse Voltage Rating, Gate Open. The non-repetitive peak reverse voltage rating
is the maximum
a owable instantaneous value of the reverse voltage, including all non-repetitive transient
voltages, but excluding
all repetitive transient voltages, which occur across the SCR.
p.ak Reverse Gate Voltage Rating. The peak reverse gate voltage rating is the maximum
allowable peak voltage
1

RMS

Vkom

VG

itj,

V GFM
r T~
'

i<;t

between the gate terminal and the cathode terminal when the junction between the gate region and the
adjacent
cathode region is reverse biased.
Peak Forward Gate Voltage Rating The peak forward gate voltage ratine
is the maximum allowable peak voltage
between the gate terminal and the cathode terminal resulting from the flow of forward
gate current
M T '' OG,r Y? UaS*A DC The DC gate trigger voltage is the DC voltage between the gate and the cathode required
f"
to produce the DC gate trigger current.
T
DC gate trigger current is the minimum DC gate current required to cause switching
9 ^ u,
T heon-state
J''l 7^
i I :, ?toc the
from
the off-state
for a stated anode-to-cathode voltage.
Gate Supply Current to Trigger, DC. The gate supply current to trigger is the
sum of the gate trigger current (Ir T )
and the external gate-to-cathode shunt resistor current which the gate supply must supply
to trigger the SCR
0i " P a,io " R<" iB 9- The average gate power dissipation rating is the
maximum allowable gate
^l?**?-?*?""
power dissipation, averaged over a full cycle, between gate and cathode.
Pulse Oelov Tim.. The delay time of a pulse is the time interval
from a point at which the leading edge of the
1
percen * of ** maxi."" amplitude to a point at which the leadinf

edfe of thl
output pulse has risen to 10
1
percent of, its maximum amplitude.
Effective Irrodiance. The amount of incident radiant flux
density which has an effect on the device This is the
integral of the product of the spectral response curve of the cell
and the spectral distributfon of the energy
source, expressed in watts per square centimeter.
" T j"!'- The. a mou,?^ ? in,cid ?nt radiant flux density which is effective in causing the device
" the intef?ral f the produCt of the s P ectral response, curve tf the
Jfe"
cell and the
dlSt " but,0n of
the energy source expressed in watts per square centimeter! which causes
the devlcfto swTteh
,

'

I (is

I*,;

,i

,av>

outnut^uA^tVt

K"

Het

fH^'J^f^*

.Relative Responte.

^
.

^r^^fV"?
The

ratio of the response of the device at

1334

any one wavelength

to the

maximum

response.

ft'-"".'..--

,..J^i.'..S"

Light DeteCtOr

Planar Silicon Photo-Darlington Amplifiei

L14F1-L14F2
The General

Electric

L14F1 and L14F2

many

Photodarlington Amplifiers. For

are supersensitive

emitter leads are used; however, a base lead

and the gain of the device. The L14F1

cally

NPN Planar Silicon

applications, only the collector

is

and

provided to control -sensitivity

- L14F2

are a

TO-18

Style hermeti-

sealed packages with lens cap and are designed to be used in opto-

electronic sensing applications requiring very high sensitivity.

absolute

maximum

ratings: (2 5C)

(unless otherwise specified)

VOLTAGES - DARK CHARACTERISTICS

Collector to Emitter Voltage

25
25

Vceo
VcBO
Vebo

Collector to Base Voltage

Emitter to Base Voltage

volts

NOTEt.

volts

LEAD DIAMETER IS CONTROLLED IN THE ZONE BETWEEN

volts

SEATING PLANE. BETWEEN

.25OAN0 END OF LEAD A MAX.

.150

12

OF .021 IS HELD.
NOTE 2.
LEADS HAVING MAX. DIAMETER
(.0*9) MEASURED IN GAGING
PLANE .054 + .00I-.0O0
BELOW THE SEATING PLANE
OF THE DEVICE SHALL BE
WITHIN .007 OF TRUE POSITION
RELATIVE TOMAX. WITH TAB.
NOTE 3.
MEASURED FROM MAX. DIAMETER OF THE ACTUAL DEVICE
ALL DIMEN. IN INCHES AND
ARE REFERENCE UNLESS
T0LERANCED.

CURRENTS
Light Current

200

mA

300
600

mW
mW

150

C
C

DISSIPATIONS

Power Dissipation (T A = 25 C)*

Power Dissipation (T c = 25C)**

PT
PT

AND .250 FROM THE

TEMPERATURES
Junction Temperature

Tj

Storage Temperature

TsTG

*Derate 2.4
**Derate 4.8

mW/C above 25C

mW/C above 25 C

-65 to 150

.048
.028

(NOTE

ambient.
case.

electrical Characteristics: (2

5C)

(unless otherwise specified)

L14F2

L14F1
MIN.

STATIC CHARACTERISTICS

LIGHT CURRENT
(V CE = 5V, Hf = 0.2

mW/cm 2 )

MAX.

MAX.

MIN.

mA

I.

DARK CURRENT
(VCE = 12V,I B =

EMITTER-BASE BREAKDOWN VOLTAGE

(I E = 100 M A)
COLLECTOR-BASE BREAKDOWN VOLTAGE
(I C

= 100|UA)

100

100

Id

0)

V,(BR)EBO

12

12

'(BR)CBO

25

25

'(BR)CEO

25

25

COLLECTOR-EMITTER BREAKDOWN VOLTAGE

(I c

= 10

mA)

SWITCHING CHARACTERISTICS (see Switching

SWITCHING SPEEDS
(Vcc = 10V, I L = 10 mA, R L = 100 fi)
DELAY TIME
RISE TIME
STORAGE TIME
FALL TIME
+ H = Radiation Flux Density. Radiation source

NOTE: The 2870K

0.2

mW/cm 2

radiation

is

25%

tungsten source.

is

effective

nA

Circuit)

tr

50
300

50
300

//sec

ts

10

10

Msec

tf

250

250

jusec

td

jusec

an unfiltered tungsten filament bulb at 2870K color temperature.

on the photodarlington;

1335

i.e.,

GaAs

source of 0.05

mW/cm 2

is

equivalent to this

TYPICAL ELECTRICAL CHARACTERISTICS

L14F1-L14F2

ioo
* n

mW/cm 2
2.0

I.O

IO

1.0

.b

-.5

>

1-

<

_l
111

.2

cr

<

0.1

OJ

.08
.06

.04

IO

NORMALIZED
V CE

"

O.I

30

.2mW/cm2

TO'-

.02

= 5V
.2mW/cm2

10
15
20
25
V CE - COLLECTOR TO EMITTER - VOLTS

1.

VCE

.01

35

-50

-25

50

25

75

100

125

TEMPERATURE - C

LIGHT CURRENT VS. COLLECTOR

TO EMITTER VOLTAGE

2.

RELATIVE LIGHT CURRENT VS.

AMBIENT TEMPERATURE

110

0.9

100

z
O

0.8

90

Si
UJ

0.7

80

UJ
i>

<r
_i

0.6

a:
*-

0.5

<

2 60

UJ

50

Q.

UJ

<*

?
<

0.3

UJ

0.2

40
30
1

20
0.1

400

500

600

700

800

X- WAVELENGTH
3.

900

-4

1000

1100

1200

-90

-70

-30

-50

NANOMETERS

-10

10

30

50

70

90

DEGREES

SPECTRAL RESPONSE CURVE

4.

ANGULAR RESPONSE

ioo
i.ov

t0N

5.

TEST CIRCUIT

= td

6.

tr

0FF

= t
s

tf

WAVE FORMS

I
0.1

1.0

RELATIVE SWITCHING SPEED

7.

1336

10

LIGHT CURRENT VS. RELATIVE

SWITCHING SPEED

ioo

Light Detector

Planar Silicon Photo Transistor

L14G1-L14G2-L14G3
The General

L14G1

Electric

L14G3

thru

are highly sensitive

NPN

Planar Silicon Photo-

package with lens cap.

transistors. They
The L14G series is ideal for use in optoelectronic sensing applications where both high
sensitivity and fast switching speeds are important parameters. Generally only the collector
are

housed

in a

TO-18

style hermetically sealed

and emitter leads are used; a base lead

and gain of the device.

is

provided, however,

to

control

sensitivity

NOTE
LEAD DIAMETER IS CONTROLLED IN THE ZONE BETWEEN
150 AND 250 FROM THE
I

absolute

maximum

ratings: (25C unless

otherwise specified)

SEATING PLANE BETWEEN

250 AND END OF LEAD A MAX.

Voltages

OF .021 IS HELD
NOTE 2.
LEADS HAVING MAX DIAMETER

Dark Characteristics

Collector to Emitter Voltage

Collector to Base Voltage

Emitter to Base Voltage

VCEO
VCBO
VEB o

45
45

volts

volts

019)

NOTE

50

raA

300
600

mW
mW

3.

MEASURED FROM MAX. DIAMETER OF THE ACTUAL OEVtCE

ALL DIMEN IN INCHES AND
ARE REFERENCE UNLESS

Currents
Light Current

MEASURED IN GAGING

PLANE .054 + .001 -.000

BELOW THE SEATING PLANE
OF THE DEVICE SHALL BE
WITHIN .007 OF TRUE POSITION
RELATIVE TOMAX. WITH TAB.

volts

TOLERANCEO.

co

Dissipations

Power Dissipation (T A = 25C)*

Power Dissipation (T c = 25C)**

PT
PT

^-L

'f

(11

Temperatures

Junction Temperature

Tj

Storage Temperature

T STG

s*~

^.45'

C
C

+ 150

-65

028
NOTE 3)

to + 150

Derate 2.4 mW/C above 25C ambient

mW/C above 25C case

**Derate 4,8

electrical Characteristics:

(25C unless otherwise

specified)

L14G3

L14G2

L14G1
MIN.

STATIC CHARACTERISTICS

MAX.

MIN.

MAX.

MIN.

MAX.

Light Current

(VCE = 5V, Hf = 10mW/cm 2 )

Dark Current
(VCE = 10V,H*0)

mA

12

100

100

10

nA

Emitter-Base Breakdown Voltage

(I e

= 100mA,I c =

0,H0)

Breakdown Voltage
= 100 W A, I E =0, H0)

V (br)EB o

V (BR)C BO

45

45

45

V (BR )CE0

45

45

45

Collector-Base
(I C

Collector-Emitter
(I c

= 10mA,

Breakdown Voltage

H0

Saturation Voltage

= 10mA, I B = 1mA)
Turn-On Time (Vce = 10V, I c = 2mA,
(I c

Turn-Off Time

fH

R L =100n)

t on
t off

= Radiation Flux Density. Radiation source is on unfiltered

tungsten filament bulb at 2870K color temperature.

j/sec

Msec

NOTE: A GaAs
1337

0.4

0.4

0.4

Vce(sat)

mW/cm 2

approximately equivalent
2
to a tungsten source, at 2870K, of 10 mW/cm
source of 3.0

is

TYPICAL ELECTRICAL CHARACTERISTICS

L14G1-L14G2-L14G3
10

H<

>

=20mW/c m

z
UJ

IOmW/cm 2

CE

1
i

r-

5mW/ cm'

o
Q
N

>

2mW/cm'

_l

5
*
o
z

0.1

ImW/cm 2

M
NORMALIZED TO

_J

VCE = 5V
H' = IOm//cm 2

i-

V CE =5V

Ht = |Om

W/cm 2

.01

.01
I

0.1

COLLECTOR TO EMITTER VOLTAGE

C

H*

Light Current vs Collector to Emitter Voltage

TOTAL IRRADtANCE

mW/em 2

IN

Normalized Light Current vs Radiation

10

o
r
"L = IKli

o
y

z
5

1.0

1.0

<
2

Rl=ioc

NORMALIZED TO

NORMALIZE DTO
V CE = 5V

VCE

10

VOLTS
R L =IOi1

I L =2mA

H'=IOmVV/cm 2

T=25C

RL=tOC

0.1

-50

50

100

150

T- TEMPERATURE - C

1.0

10

IL-OUTPUT CURRENT-mA

Normalized Light Current vs Temperature

Switching Times vs Output Current

io 5

1.2

1.0

o
UJ
N

.6

103

I0 2

NORMALIZED TO

LED55B INPUT-IOmA

NOR AALIZEDTO
I 325C

VCE

"

10

VOLTS

I L=IOOiiA"

vc E0= 10 VOLTS

T 25C

I
25

50
T-

75

100

125

150

55

TEMPERATURE -C

35

5
-

Dark Current vs Temperature

25

TEMPERATURE

45
C

Normalized Light Current vs Temperature

Both Emitter (LED55B) and Detector
(L 14G) at Same Temperature

1338

85

Light DeteCtOr

Planar Silicon Photo Transistor

L14H1-4
The General Electric Light Sensor Series are NPN Planar Silicon Phototransistors in a clear
epoxy TO-92 package. They can be used in industrial and commercial applications requiring a
low cost,general purpose, photosensitive device. Generally only the collector and emitter leads
are used; a base lead is provided, however, to control sensitivity and gain of the device.

absolute
Voltages

maximum

ratings:

(25C) (unless otherwise specified)

L14H2, H4 L14H1, H3

Dark Characteristics

Collector to Emitter Voltage

^CEO
VcBO
VEB0

Collector to Base Voltage

Emitter to Base Voltage

30V
30V

60V

volts

60V

volts

.210

~f~

volts

*-|
NOTE

h Lead diameter is
controlled in the lone between
.070 and .250 from the seating

Currents
Light Current

mA

II

100

PT

200

mW

Tj

100

Junction Temperature

T STG

Storage Temperature

*Derate 2.67

mW/C

-65

to

100

I)

-J J2& U-

Temperatures

-.00I

(NOTE

ALL DIMEN. IN INCHES AND

ARE REFERENCE UNLESS
T0LERANCE0.

Dissipations

Power Dissipation (T A = 25 C)*

0I7

Between .250 and end of

plane.
leod a max. of .021 is held.

I] .105

d_

TlTta
I

Afror

IS WITHI

.oeor
oeoi

THE ACTIVE AREA IS

CENTERED WITHIN A 0.020
SQUARE ON THE PELLET
SURFACE.

above 25 C ambient

DIMENSIONS

IN

.205

INCHES

PEUET LOCATION

electrical characteristics:

(25C) (unless otherwise specified)

L14H2

L14H1

STATIC CHARACTERSITICS

Min.

Max.

Min.

Max.

L14H3
Min.

Max.

L14H4
Min.

Max.

Units

Light Current
2
(V CE = 5V, Ht = 10mW/cm )

Dark Current
(V CE = 10V,

H * 0, I B

= 0)

mA

.5

nA

100

100

100

100

Id

2.0

2.0

.5

Emitter-Base Breakdown Voltage

c = 0,H0)
Collector-Base Breakdown Voltage
(I
C = 100M,IE = 0,H~0)
(I

e =

100/liA,

Breakdown Voltage
= 10mA, H0)
c
Pulse Width<300Msec, Duty cycle<l%)

V (BR)EBO

volts

V(BR)CBO

60

30

60

30

volts

V (BR)CEO

60

30

60

30

volts

Collector-Emitter
(I
(

Saturation Voltage
(I

V CE(SAT)

= 10mA, I B = lmA)

0.4

0.4

0.4

0.4

volts

Switching Speeds

(V CE = 30V, I L = 800
On Time (t d + t r )
Off Time (t s + t r )

juA,

RL

= lk^)**
^-on

jusec

/usee

Radiation Flux Density. Radiation source is an unfiltered tungsten filament bulb at 2870 K color temperature.
1 339
**Radiant source is a gallium arsenide light emitting diode.

fH =

TYPICAL ELECTRICAL CHARACTERISTICS

L14H1-4

10

10

0.5

0.5

NORMALIZED TO
5 VOLTS

V CE
H*-

lOmW/cm

NO iMALIZED TO
V C E = 5 VOLTS

01

0.05

0.05

01

10
20
30
VCE - COLLECTOR TO EMITTER V0LTA6E-V0LTS

lOmW/cm

oni

25

H*-RA0IATION FLUX DENSITY-mW/cm 2

NORMALIZED LIGHT CURRENT VS.

COLLECTOR TO EMITTER VOLTAGE
1.

T-

NORMALIZED LIGHT CURRENT

2.

VS.

3.

RADIATION

TEMPERATURE-'

NORMALIZED LIGHT CURRENT

VS. TEMPERATURE

'\ <\
\
-I4H

RESPONSE
CURVE -~^

\\

\
|

|
1

r\

/
/

G a As

t-

INFARED EMITTIN9

^
1

/
1

1
25

4.

50

75

100

125

600

150

T-TEMPERATURE-'C

700

X-

800

900

WAVELENGTH-NANOMETERS

DARK CURRENT VS. TEMPERATURE

5.

SPECTRAL CURVES

/
f

\\
1

\
0.|O

r
-90*

\
\
-^

+90"

\
\\

/
-J

0?

\\

-100 -80

-60 -40

-20

20

40

60

90

iOO~

-10

9- INCIDENT ANGLE - DEGREES

6.

RELATIVE RESPONSE

VS. INCIDENT

-8()

-6 3

-41D

21 5

61

6D

INCIDENT ANGLE -DEGREES

ANGLE

7.

1340

RELATIVE RESPONSE

VS.

INCIDENT ANGLE

10


Direct replacement for

SSL55B, SSL55C, SSL56, SSL55BF, SSL55CF, SSL56F

Infrared Emitter

3 121 LED55B, LED55C,LED56,LED55BF, LED55CF,LED56F

Gallium Arsenide Infrared-Emitting Diode
The General
light

Electric

LED55B-LED55C-LED56

emitting diodes which emit non-coherent, infrared energy with a peak wave
940 nanometers. They are ideally suited for use with silicon detectors.

length of

The "F" versions of these devices have

LED55BF
LED55CF
LED56F

LED55B
LED55C
LED56

Series are gallium arsenide,

230
209"

flat lens caps.

.i
*~ .230
209~^
I.

195

778

._ .195 ,,
.178

'

"T
.255

absolute

maximum

MAX.

ratings: (25C unless otherwise specified)

2

Voltage:

LEADS

t==

017158-31
volts

Reverse Voltage

(NOTED

Currents:
If

If

100
10

mA

170

mW
W

TT

_E

"PLANE"
.040
MAX. .500
2LEADSf|

U
"

.040^*
MAX

MIN.

fl

-m

Forward Current Continuous

Forward Current (pw 1 jusec 200 Hz)

.155

1MAX.
SEATING

.OI7t'ggf

J00 -

^NOMf

-&?N

u_

.031

.044

.044

2rV

Dissipations:

Power Dissipation (T A = 25C)*

Power Dissipation (T c = 25 C)**
Temperatures:
Junction Temperature

Pt
PT

1.3

-65Cto+150C

Tj

T STG -65Cto+150C

Storage Temperature

10 seconds

Lead Soldering Time

Derate 1.36
Derate 10.4

mW/C
mW/C

ANODE^ y

at

NOTE 1:
LEAD DIAMETER IS CONTROLLED IN THE ZONE BETWEEN
.050 AND .250 FROM THE
SEATING PLANE. BETWEEN
.250 AND END OF LEAD A

CAT

(CONNECTED
TO CASE)

260C

MAX. 0F.02I

above 2SC ambient.

above 2SC case.

IS

HELD.

electrical characteristics: (25C unless otherwise specified)

TYP.

MIN.

MAX.

UNITS

10

yuA.

1.7

Reverse Leakage Current

(Vr = 3V)

Ir

Forward Voltage
(I F = 100mA)

VF

1.4

optical characteristics: (25C unless otherwise specified)

Total Power Outp,ut (note 1)
(I F

= 100mA)

LED55B-LED55BF
LED55C-LED55CF
LED56 -LED56F

Po

mW
mW
mW

3.5

5.4
1.5

Peak Emission Wavelength

(I F = 100mA)

940

nm

.28

nm/C

Bandwidth 50%

60

nm

Rise

Time 0-90% of Output

300

nsec

Fall

Time 100-10% of Output

200

nsec

Spectral Shift with Temperature

Spectral

Note

Total power output, P<>

is

the total

power radiated by the device

1341

into a solid ang

of 2

IT

steradians.

LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F

TYPICAL CHARACTERISTICS

0.8

NORMALIZED TO
Xp-IOOmA
TA ' 25-C

.02

IF-

1.

.05

0.1

0.2

0.5

25

FORWARD CURRENT-AMPERES

50

75

Ta-AMBIENT TEMPERATURE -'C

POWER OUTPUT VS. INPUT CURRENT

2.

POWER OUTPUT VS. TEMPERATURE

8.0
6.0

?n
I.O

08
0.6

O.I

.06

Ol

I.O

Vp- FORWARD VOLTAGE -VOLTS

LED 55B,

55C, 56, 55BF, 55CF, 56F FORWARD

VS. FORWARD CURRENT

I.2

I.I

VF -

I.3

FORWARD VOLTAGE -VOLTS

FORWARD VOLTAGE VS.

FORWARD CURRENT

VOLTAGE

r
/

L2

I
50

40

30

20

--^
10

10

20

30

8-ANGULAR DISPLACEMENT FROM OPTICAL AXIS-DEGREES

5.

LED 55B, 55C, 56

TYPICAL RADIATION PATTERN

40

80

6.

1342

60
40
20
20
40
6C
- ANGULAR DISPLACEMENT FROM OPTICAL AXIS - OEGR

LED 55BF, 55CF, 56F

TYPICAL RADIATION PATTERN

'

Silicon

Diodes
MPA, MPS SERIES SEE SELECTOR GUIDE

This family of General Electric Milli-Heatsink Diodes are very high speed
switching diodes for computer circuits and general purpose applications.
These diodes incorporate an oxide passivated epitaxial pellet with a raised
solid silicon anode contact.

These MA-series diodes exceed the

of the following

JEDEC

electrical

and mechanical requirements

devices

Standard Cathode Band

MAT 701
1N914

1N4153
1N4154
1N4446
1N4447
1N4448
1N4454
1N4727

1N914A
1N916

1N916A
1N4148
1N4149
1N4151
1N4152

MAI 702

MAI 703

and Body Marking

1N4151
1N4152
1N4153
1N4154
1N4454
1N4727

1N4152
1N4154
1N4727

MA1701

Colors:

Violet
MA1703 Green
MA1704 Black

M A1702 Yellow
0.100

" 0-090

Body marking

will consist

only of the

symbol

GE

0.120

0.660

GE
riTunnr ENOfnr
CATHODE
NOTE: ALL DIMENSIONS

absolute

maximum

ratings:

Vu

100

4
*

MA 1703

MAI 702

MAI 704
25

40

75

Current

Average

Rectified

Recurrent Peak Forward

Forward Steady State D-C
Peak Forward Surge (1/isec)

Ik km
Ik
IfSM

Temperature
Operating
Storage

Tj
TsTO

^0

1
1.1

Derate above 25 C

INCHES

(25C)
MAI 701

Voltage
Reverse

IN

--65

to

+175

Volts

mA
mA
Amps
mA/'C
C
C

Power Dissipation

Note

Heatsink Spacing

Power Dissipation

From End of Diode Body

at25C/mW")

0.125 inches
0.250 inches
0.500 inches

700
550
460

Steady State Thermal

Resistance

("C/mW)

0.230
0.319
0.438

as an
dissipation is defined as the heat dissipating capability of the diode when operated at 25 C
The power rating is
device within the absolute maximum voltage and current ratings specified above.
resistance CC/mW) can be used to
based on a maximum junction temperature of 200C. The steady state thermal
and current ratings, at temperatures other
calculate the power dissipating capabilities, within the maximum voltage

The maximum power

AC

signal

than 25C.

1343

MA1 701,2,3.4

electrical characteristics:

(25C)

(unless otherwise specified)

MAI 701
Forward Voltage
(If = 0.100mA)

= 1.0 mA)
= 10 mA)
= 30 mA)<-'>
= 50 mA)(2)
= 100 mA) (2)

(If
(If
(If
(If
(If

Reverse Current

MA 1702

MAI 703

MA 1704

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

0.490
0.590
0.700
0.780
0.830
0.935

0.550
0.650
0.810
0.930

0.490
0.590
0.700
0.780
0.830
0.935

0.550
0.650
0.810
0.930

0.490
0.590
0.700
0.780
0.830
0.935

0.550
0.650
0.810
0.930

0.460
0.570
0.680
0.740
0.770
0.820

0.570
0.680
0.850

1.00
1.10

1.00
1.10

1.00
1.10

= 15 Volts)
= 20 Volts)
(V = 30 Volts)
(V = 30 Volts, Ta = 150 C)
(V K = 50 Volts)
(V R = 50 Volts, T A = 150C)
(Vb = 75 Volts)
(V B
(V R

Breakdown Voltage
(I = 5^A)

Note 2
Note 3

Note 4
Note 5

nA
nA

//.A

75

(3)

40

25

Volts
Volts

t,

40

40

40

40

3.0

2.75

1.75

1.75

1.0

1.0

2.0

3.0

PC

lOnsec)

Capacitance

(V R
0V, f
Signal Level

fiA

100

Peak Forward Voltage

50mA,

50
50

nA
nA
nA

(If= 10mA)

30
30
50
50

Stored Charge

(If

50
100
30
30
50
50

= 100M)

(Ir

1.00
1.10
1.30

Volts
Volts
Volts
Volts
Volts
Volts

<)

Volts

= 1MHz,
= 50mV)

<

>

PF

Pulsed measurement with pulse width <350Msec, duty cycle <2%.

Test method per JEDEC suggested standard number for direct measurement of diode
stored charge, B-Line Electronics Corporation stored charge meter Model QS-3 or equivalent
Measured per EIA Standard RS-286.
Capacitance as measured on Boonton Electronics Model 75A Capacitance Bridge (or equivalent).

1344

Silicon

MPS-A05
MPS-A06

Transistors

The MPS-A05 and MPS-A06

sistors

are silicon planar epitaxial passivated

NPN tran-

designed for general purpose audio amplifier applications.

maximum

absolute

ratings:

Voltages

(TA = 25C unless otherwise specified)

MPS-A05

MPS-A06

Collector to Emitter

Vceo

60

80

Volts

Collector to Base

Vcbo
VEBO

60
4

80
4

Volts

Emitter to Base

TO-92

Volts
SYMBOL

Current
Collector

Ic

500

500

A
fb

mA

*b2

T A < 25 C
Total Power T c < 25C
Derate Factor T A > 25 C
Derate Factor

Tc

>

PT
PT

25 C

625

625

1.5

1.5

12

12

m Watts
Watts

Operating

Tj

-55C to +150C

Storage

TsTG

-55Cto +150C
+230C

Lead (1/16" 1/32"

from case for 10 sec.)

electrical Characteristics:

48

.0

.0

.0

.01

2 2

2.41
I.I

L2

50

3.4 3

4.1

.1

12.700

.5

1.270

6.3 5

2.920
2.0 3

1.3

75 20 5

ei

.1

NOTES

1.

.2
.1

00
50
1

2.670 .080

1,3

3
3
2

.05

.10 5

THREE LEADS

2.CONT0UR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3.

(THREE LEADS) 4>b2 APPLIES BETWEEN L| ANDLg.

^b APPLIES BETWEEN L2 AND 12 .70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UN-

CONTROLLED IN L. AND BEYOND

FROM SEATING PLANE.

Static Characteristics

Collector-Emitter
I

12.70

MM (.500")

(TA = 25C unless otherwise specified)

MPS-A06

MPS-A05

(I c

.2

NOTES:
D

Collector-Base

.4

MAX.

.17

9
.12 5 .16 5
5
2.67
.09 5
1.39 5 .0 4 5 .0 5 5
4.32
.13 5 .170

= 1mA,

.4

5.3 3
.5 5

INCHES
MIN.

3.180

Li

Temperature

(I c

MAX.

MIN.
43 2

4.4 5

mW/C
mW/C

MILLIMETERS

5.2

4,0

Dissipation

Total Power

EMITTER
BASE
3. COLLECTOR
I.

2.

MAX.

MAX.

UNITS

SYMBOL

MIN.

V(BR)CEO

60

80

Volts

V(BR)CBO

60

80

Volts

V(BR)EBO

MIN.

Breakdown Voltage

B = 0)

Breakdown Voltage

= 100 m A, Ie = 0)

Emitter-Base Breakdown Voltage

(I E

= 100 nA, I c = 0)

Volts

Collector Cutoff Current

(V CB = 60V, I E = 0) - MPS-A05
(V CB = 80V, I E = 0) - MPS-A06

100

nA
nA

10

100

nA

100

IcBO

IcBO

"

Collector Cutoff Current

(VCE = 60V, I B = 0)
Forward Current Transfer Ratio
(VCE = IV, I c = 10mA)
(VCE = IV, I c = 100mA)

Iceo

h FE

50

50

th FE

50

50

1345

MPS-A05
MPS-A06
MPS-A05
Static Characteristics (continued)

SYMBOL

MPS-A06

MAX.

MIN.

MIN.

MAX.

UNITS

Collector-Emitter Saturation Voltage

(Ic

= 100mA,

B =

10mA)

Base-Emitter Saturation Voltage

0c = 100mA, I B = 10mA)

fVCE(sat)

.25

.25

Volts

fVBE(sat)

1.0

1.0

Volts

fVBE(ON)

1.0

1.0

Volts

12

12

pF

Base-Emitter Voltage

(VCE = IV, I c = 100mA)

Dynamic

Characteristics

Collector-Base Capacitance

(VCB = 10V, I E = 0,f = 1MHz)

Ccb

Gain bandwidth

(VCE = 5V, Ic = 30mA,

fPulse width

10

a
2
N

s
e

< 300/Jsec, Duty

= 50 MHz)
Cycle

80

fT

f=|

in

-J

*e [IV

I0

>

Fffl

-"

8
s

TYPICAL
,

10 XI,

sc

i:

MHz

80

< 2%.

X
*
z

i.o

5
S
K

-*

-99C

<

ui

ii-

I
UJ
Ul

s
u

P
a

i
,

-95C

29C
10
IC

-COLLECTOR CURRENT-mA

IC

FORWARD CURRENT TRANSFER RATIO NORMALIZED

TO 10mA VALUE VS COLLECTOR CURRENT

COLLECTOR EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT

5
K

>-

X
Ul

sac

i?

1-

29C

'::^

VBtt*''.!]

> s

UJ

g
K
UJ

'""tt

iic

''

iio

-COLLECTOR CURRENT -m

V,lt01V

29 C

ut

s
)

*
l

c -COLLECTOR

CURRENT-m*

BASE EMITTER VOLTAGE (VcE = 1V) AND BASE EMITTER

SATURATION VOLTAGE (l C - 10.x 1P) VS COLLECTOR CURRENT
1346

Silicon

Darlington

MPS-A12

Transistor

-1-

_o3

AD

- ?Z I

The General
lifier

Electric

NPN

Passivated

MPS-A12

is

a Silicon Planar Epitaxial

Darlington Transistor

is

input applications where high impedance

maximum

absolute

is

a requirement.

SEATING PLANE

SYMBOL

Voltages

Collector to Base

Vces
Vcbo

Emitter to Base

Vebo

20
20
4

fb

Volts

500

Ic

.4

*D

4.4 5

Volts

3.1

e
1

2.41

mA

Dissipation

TA

<

Derating Factor

TA

25 C

> 25C

PT
PT

626

mW

5.0

mW/C

I.

+150
+150
+230

Tstg

-55 to

Operating

T,

-55 to

TL

Lead (1/16" 1/32" from

80

3.4 3

COLLECTOR

INCHES
MAX.

MIN.
7

.2

4.1 9
2.67

NOTES

.0

6 .0 2 2
16, .01 9

.1

75 .205

.0

8 2

5.2

1.3

.12 5 .16 5
.09 5
5
.0 4 5 .0 5 5
.170
3 5
.1

50 1.395

12.700

BASE

3.

.1

55
.4

2.

4.32

.1

.5

1.270

L2

6.3 5

2.92

2.0 3

2.670

00

1,3

- j.050
.2 50
1

.115
.0

80 |.l

3
3
2

NOTES:

Temperature
Storage

I.I

5.3 3

7
7

.4

*b2

Li

Total Power

4.3 2

Volts

Current
Collector

MILLIMETERS
MAX.
MIN

EMITTER

I.

TO-92

ratings: (TA = 25C unless otherwise specified)

Collector to Emitter

-I

-L2 -j

designed for preamp-

THREE LEADS

2 CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3 (THREE LEADS) tf,b2 APPLIES BETWEEN L| AND L 2
$b APPLIES BETWEEN Lj AND 12.70 MM (.500")

C
C
C

FROM THE SEATING PLANE. DIAMETER

CONTROLLED IN L. AND
FROM SEATING PLANE.

IS

UN-

case for 10 sec. max.)

electrical characteristics: (TA unless otherwise specified)

SYMBOL

Static Characteristics

Collector-Emitter
(I c

MIN.

MAX.

BVq E s

20

Ices

100

nAdc

Icbo

100

nAdc

100

nAdc

20,000

VcE(sat)

1.0

Vdc

VflE(on)

1.4

Vdc

Ccb

hfe

20,000

Breakdown Voltage

= 100/uAdc,

IB

=0)

Collector Cutoff Current

(VCE = 15Vdc,

VBE =0)

Collector Cutoff Current

(VCB = 15Vdc, I E =0)

Emitter Cutoff Current

(VEB = lOVdc, I c =0)

DC

*ebo

Current Gain

(I c

= 10 mAdc,

VCE

= 5,0 Vdc)

hFE

UNITS

Vdc

Collector-Emitter Saturation Voltage

(I c

= 10 mAdc,

(I c

= 10 mAdc,

VCE

B = 0.01
Base-Emitter On- Voltage

Dynamic

mAdc)

= 5.0 Vdc)

Characteristics

Output Capacitance
(VCB = 10 Vdc, I E =

0, f

= 100 kHz)

Small-Signal Current Gain

(I c

= 10 mAdc,

VCE

= 5.0 Vdc,

= 1.0 kHz)

1347

PF

MPS-A12
10
.

25C

->.

1.0

8
6

5
>:

%
u

5
o
>

z
*

- 55C

'

'YPICAL

1
2
=
5
K

lii

S3

i
o
DC

I00C

3
tc

too

e
1-

<

2
Ui

.i

5
i

-55C

25C
||

V
.5V

<

YPICAL
VCE

UI
||

01

10
I

10

c -COLLECTOR CURRENT -mA

FORWARD CURRENT TRANSFER RATIO NORMALIZED

TO 2mA 5V VALUE VS. COLLECTOR CURRENT

COLLECTOR EMITTER SATURATION VOLTAGE

VS. COLLECTOR CURRENT c = B X 1000
l

26

T
T

2.6

TYPICAL

2.2

2.0
<n

>

Ifi

S,4
I

II

nun
I

t-

I-2

X
Ul

zsc

v BE "-VtE'S^

"7ooc

v BE (SAT)

I.0

<
o

.8

UJ

ID

>

.0

IC"

100

-COLLECTOR CURRENT- mA

COLLECTOR CURRENT -mA

BASE EMITTER VOLTAGE V CE

5V AND BASE EMITTER

SATURATION VOLTAGE IC = IB X 1000

VS. COLLECTOR CURRENT

1348

Silicon

Darlington

MPS-A13
MPS-A14

Transistor
The General
taxial

Electric

MPS-A13, A14

NPN

Passivated

are Silicon Planar Epi-

Darlington Transistors designed for

preamplifier input applications where high impedance

is

maximum

"T
_D
i_

t*A J

A-

ratings: (TA = 25C unless otherwise specified)

-A

SEATING PLANE

I.

2.
3.

Voltages
Collector to Emitter

Vces
VCB
VEB

Collector to Base

Emitter to Base

30

Volts

SYMBOL

30

Volts

10

Volts

*b2

fb
*D

Current

500

Collector

mA

T A < 25 C
Total Power T c < 25C
Derate Factor T A > 25 C
Derate Factor T c > 25C

PT
PT
PT
PT

mWatts

1.5

Watts

5.0

mW/C
mW/C

12

.4

.4

55
.4

8 2

5.2

2.41

5.3 3

4.4 5
3.1

625

4.3 2

Total Power

MILLIMETERS
MAX.

MIN.

Dissipation

4.1

90

2.67

EMITTER
BASE
COLLECTOR

INCHES
MAX.
.210

MIN.
.17

6 .0 2 2
6 .01 9
.17 5 .20 5
.12 5 .16 5
.09 5 .105

.0

.0

NOTES
1.3

50 1.395 .045 .055

I.I

4.3 2

3.4 3

12.700

L|

L2

6.3 5

2.920

2.0 3

1.270

2.67

.1

.5

3 5 .170

00

- .05

.2 50
.1

.0

80

1,3

3
3
2

.10 5

NOTES:
1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

Temperature

+150
to +150
+230

Storage

Tstg

-55 to

Operating

Tj

-55

Lead (1/16" 1/32" from

TL

case for

2-

requirement.

absolute

-t
-

10

THIS SIDE.
3.(THREE LEADS) <b2 APPLIES BETWEEN Li AND Lg.
^b APPLIES BETWEEN L2 AND (2.70 MM (.500")

C
c
c

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

max.)

sec.

electrical characteristics: (TA = 25C unless otherwise specified)

SYMBOL

Static Characteristics

Collector-Emitter
(I c

MIN.

TYP.

MAX.

UNIT

BVces

30

Vdc

ICBO

100

nAdc

Iebo

100

nAdc

Breakdown Voltage

= 100/uAdc,

= 0)

IB

Collector Cutoff Current

(VCB = 30Vdc, I E =0)

Emitter Cutoff Current

(VBE = lOVdc, I c =0)

DC

Current Gain

(I c

(I c

= lOOmAdc,

lOmAdc,

VCE

= 5.0Vdc)

VCE

= 5.0 Vdc)

MPS-A13
MPS-A14
MPS-A13
MPS-A14

*h FE
*h FE
*h FE
*h FE

5,000
10,000
10,000
20,000

Collector-Emitter Saturation Voltage

mAdc)

VCE(sat)

0.75

1.5

Vdc

= 5.0 Vdc)

VBE(on)

1.29

2.0

Vdc

hFE

MHz

Ccb

5.4

pF

(I c = lOOmAdc, I B = 0.1
Base-Emitter On-Voltage
(I c

= 100 mAdc,

Dynamic

VCE

Characteristics

High Frequency Current Gain

(I c = 30 mAdc, VCE = 10 Vdc,

Output Capacitance
(VCB = 10 Vdc, I E =

0, f

= 20 MHz)

= 100 kHz)

Noise Figure
(I c

1.0

Pulse Test:

mAdc, VCE =

Pulse Width

<

5.0 Vdc,

Rs = lOOKohms, f = 1 .0 kHz)

300ms, duty cycle

<

2.0%.

1349

NF

2.0

dB

MPS-A13
MPS-A14
100

10

8
6

</)

I00C

LU

25C_.

8
6

T YPICAL

2
z

>

.0

?
6

Z
55C,

>-

8
*

o:

E 2
Ui

K
P

.1

6
4

-!5C

'

-!

S
V

" 2SC
IOOC

ICAL
VCE .5V

UJ

01

100

10

c -COLLECTOR CURRENT

-mA

FORWARD CURRENT TRANSFER RATIO NORMALIZED

TO 2mA 5V VALUE

VS.

CURRENT-mA

COLLECTOR EMITTER SATURATION VOLTAGE

VS. COLLECTOR CURRENT c = B X 1000

COLLECTOR CURRENT

IC-

c -COLLECTOR

COLLECTOR CURRENT-mA

BASE EMITTER VOLTAGE V CE

5V AND BASE EMITTER

SATURATION VOLTAGE IC = IB 1000

VS. COLLECTOR CURRENT

I
1350

Silicon

Transistors

The MPS-A20

is

a silicon planar epitaxial passivated

NPN transistor,

designed

for general purpose amplifier applications.

absolute

maximum

ratings:

(TA = 25C unless otherwise specified)

Voltages

Vceo
Vcbo
Vebo

Collector to Emitter
Collector to Base

Emitter to Base

40

Volts

50

Volts

I.

SYMBOL

Volts

Current

fb

Ic

Collector

fa

mA

100

*D

Dissipation

T A < 25C
T c < 25C
Derate Factor T A > 25 C
Derate Factor T c > 25C

Total Power

PT

350

Total Power

PT

1.0

Watts

Watt

8.0

Tj

Storage

TsTG

TL

Lead (1/16" + 1/32" from

-55Cto +150C
-55Cto +150C
+230C

Static Characteristics

Collector-Base
(I c

25C

B = 0)

IE

= 0)

50

3.4 3

12.700

LZ

6.3 5

2.920
2.0 3

= 10mA,

Dynamic

B =

1mA)

75

.1

4.32

.0

.0

2 2

2.670 .080

.1

.0

.1

.1

1.3

.20 5
.16 5
55

3 5 .170
1
tjJOO

1.270 1
.2 50

.0

1,3

3
2

.10 5

SYMBOL

MIN.

AAX.

UNITS

V(BR)CEO

40

Volts

V(BR)CBO

50

Volts

Volts

100

hFE

40

nA

400
.25

VcE(sat)

Volts

Characteristics

Collector-Base Capacitance

(VCB = 10V, I E = 0,f= 1MHz)

Gain Bandwidth Product
(V CE = 10V, I c = 5mA,

unless otherwise specified)

Collector-Emitter Saturation Voltage

(I c

6
6

.1

NOTES

IcBO

Forward Current Transfer Ratio

(V CE = 10V, I c = 5mA)

.0

25
4.1 9
.09 5
2.67
1.39 5 .0 4 6

Collector Cutoff Current

(VCB = 30V, I E = 0)

.2

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

V(BR)EBO

= 100/iA, I c = 0)

I.I

MAX.

THIS SIDE.
3 (THREE LEADS)stb2 APPLIES BETWEEN L AND L 2
12.70 MM .500'
<f,b APPLIES BETWEEN L2 AND

c
c

Emitter-Base Breakdown Voltage

(I E

Breakdown Voltage

= 100/xA,

2.41

MIN.
.17

8 2

.4

520

COLLECTOR

NOTES:
t.THREE LEADS
Z CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

Breakdown Voltage

Collector-Emitter
(I c = 1mA,

(ta

80

3.1

Li

case for 10 sec.)

electrical characteristics:

4.4 5

Temperature
Operating

.4

mW/C
mW/C

2.8

7
7

.4

5.3 3
.5 5

BASE

3.

INCHES

MILLIMETERS
MAX.
MIN.
4.3 2

EMITTER

2.

-cb

125

= 100 MHz)

1351

pF

MHz


MPS-A20

VCE'5 V
_T-25- c

^N s

->
\

^
\

.3

.0

.1

10

IC

-COLLECTOR CURRENT -

NORMALIZED DC CURRENT GAIN

TA- 25

U^ads
"7< T*C

r^

.2

.1

VCE<:

at)

HT

nB

ov

mtttti
0
1

.i

Ic

-COLLECTOR CURRENT-tnA

'SATURATION" AND "ON" VOLTAGES

I
1352

fir

ELECTRONIC

Silicon

INACTION-

Transistors

MPS-A55
MPS-A56

SEMICONDUCTORS

The MPS-A55 and MPS-A56

sistors

designed for

are silicon planar epitaxial passivated

medium

Voltage and current values for

absolute

PNP tran-

current general purpose amplifier applications.

PNP

maximum

are negative: observe proper polarity.

ratings:

Voltages
Collector to Emitter

Vceo
Vcbo
Vebo

Collector to Base

Emitter to Base

^Pi* H

(TA = 25C unless otherwise specified)

MPS-A55

MPS-A56

60

80

Volts

60

80
4

Volts

SEATING PLANE

TO- 92

Current
Collector

Ic

500

T A < 25 C
Total Power T c < 25C
Derate Factor T A > 25 C
Derate Factor T c > 25C
Total Power

PT
PT

625

625

1.5

1.5

12

12

Watts

.5

.4

3.

2.4
I.I

80
I

50

3.4 3

Ll

L2

EMITTER

COLLECTOR

INCHES
MIN.

MAX.

.17

.2

.0

.0

.1

6
6

NOTES

2 2

.0

.0

1.3

75 <20V

4.
9 O .12 5 .165
2.67
.09 5
5
1.39 5 .045 .0 5 5
4.32
.13 5 .170
1

.1

.5

1.270

6.3 5

12.92
2.0 3

5
8 2

20

12.700

mW/C
mW/C

40
.4

e1
J

Watts

5 3 3

4.4 5

<D

Dissipation

MAX.

MIN.
4.3 2

*b2

mA

3.

MILLIMETERS

SYMBOL

Volts

A
fb

500

I.

2 BASE

.2
.1

00
50
1

2.670 .080

.0

1,3

3
2

.10 5

NOTES
THREE LEADS
2. CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

Temperature

1.

Operating

Tj

Storage

TsTG

Lead (1/16" 1/32" from

TL

-55Cto+150C
-55Cto+150C
+230C

C
c
c

THIS SIDE.
3.

(THREE LEADS) 0b2 APPLIES BETWEEN L, AND L 2

fb APPLIES BETWEEN L2 AND 12.70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.
.

case for 10 sec.)

electrical Characteristics:

(TA = 25C unless otherwise specified)

MPS-A56

MPS-A55
Static Characteristics

Collector-Emitter
(I c

mA,

Collector-Base
(I c

SYMBOL

MIN.

MAX.

MIN.

MAX.

UNITS

V(BR)CEO

60

80

Volts

V(BR)CBO

60

80

Volts

V(BR)EBO

Volts

100

Breakdown Voltage

B = 0)

Breakdown Voltage

= 100 mA,

e = 0)

Emitter-Base Breakdown Voltage

(I E

= 100 m A, Ic = 0)

Collector Cutoff Current

(V CB = 60V, I E =
(VCB = 80V, I E =

0)
0)

- MPS-A55
- MPS-A56

ICBO

100
100

ICEO

100

IcBO

100

nA
nA

100

nA

Collector Cutoff Current

(VCE = 60V, I B =

0)

Forward Current Transfer Ratio

(V CE = IV, I c = 10mA)
(V CE = IV, I c = 100mA)

hFE

50

th FE

50

1353

50
50

MPS-A55
MPS-A55
MPS-A55
Static Characteristics (continued)

SYMBOL

MPS-A56

MAX.

MIN.

MIN.

MAX.

UNITS

Collector-Emitter Saturation Voltage

(I c

= 100mA,

IB

= 10mA)

Base-Emitter Saturation Voltage

(I c = 100mA, I
B = 10mA)

tVcE(sat)

.25

.25

Volts

tVB E(sat)

1.0

1.0

Volts

tVB E(on)

1.0

1.0

Volts

20

20

PF

Base-Emitter Voltage

(VCE = IV, I c = 100mA)

Dynamic

Characteristics

Collector-Base Capacitance

(VCB = 10V, I E = 0,f =

Gain Bandwidth Product
(VCE =

5V,

fPulse width

c =

1MHz)

Qb

30mA, f = 50MHz)

< 300 //sec,

Duty Cycle

fT

50

< 2%.

10
a

1_:::
in

"

TYPI cl(

If

B X 10

TA'< 5C

z
Ol.o
5 s

ft

--

*fcE'

23C

^S

I0
e

>

r
1.0

MHz

50

-55C

5 4
UJ

X
UJ
a:

.1

S
6

55C

sr
:

*_

,9

I25C

|
fl

JT

Su
01

||

III

.01
I

-COLLECTOR CURRENT- m4

IC

FORWARD CURRENT TRANSFER RATIO NORMALIZED

TO THE 10mA VALUE VS COLLECTOR CURRENT

"COLLECTOR CURRENT-mA

COLLECTOR EMITTER SATURATION VOLTAGE

VS COLLECTOR CURRENT

3
<

10

^>: x

X
<
00

vbeU-U^
wS.6

is

II
I

VB

-^.^^

eU

a
2

<
m
i

.1

_
IC -

COLLECTOR CURRENT-mA

BASE EMITTER VOLTAGE (V C = IV) AND BASE EMITTER

SATURATION VOLTAGE (l C = 10 x 1B) VS COLLECTOR CURRENT
1354

II

Silicon

Darlington

MPS-A65
MPS-A66

Transistor
The General

PNP

input

amplifier

MPS-A65, A66

Electric

taxial Passivated

are Silicon Planar Epi-

Darlington Transistors designed for pre-

applications

where

high

impedance

is

requirement.

maximum

absolute

QA

ratings: (TA = 25C unless otherwise specified)

SEATING PLANE

I.

2.

Voltages

3.

VCES
VCB
VEB

Collector to Emitter
Collector to Base

Emitter to Base

30

Volts

30

Volts

SYMBOL
A

Volts

fa

Current

4>D

Collector

300

Ic

mA

Dissipation

TA < 25
Total Power Tc < 25C
Derate Factor T A > 25C
Derate Factor T c > 25C

PT
PT
PT
PT

Total Power

625

mWatts

1.5

Watts

5.0

mW/C
mW/C

12

+150
+150
+230

Tstg

-55 to

Tj

-55 to

Lead (1/16" 1/32" from

case for 10 sec. max.)

TL

electrical characteristics: (TA = 25

(I c

.4

4.4 5

80

3.1

2.41
I.I

8 2

5.200
4.1

2.67

50 1.395

3.4 3

12.700

L|

L2

6.3 5

4.32

1.270

.0

.0

MAX.
10

NOTES

.2

6
6

.0

22
9
1

1.3

.17 5 .205
.12 5 .16 5
.09 5
5
.045 .0 5 5
3 5 .170
1

.1

.5

00

- .05

.2 50

5
2.920
2.030 2.670 .080
1

1,3

3
3
2

.10 5

NOTES:

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3 (THREE LEADS)^b2 APPLIES BETWEEN L AND L 2

C
c

^b APPLIES BETWEEN L2 AND 12.70 MM (.500")

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM (.500")
FROM SEATING PLANE.

unless otherwise specified)

SYMBOL

Static Characteristics

Collector-Emitter

55

INCHES
MIN.
.17

.1

1.

Operating

.4

5.3 3

.4

ei

Temperature
Storage

MILLIMETERS
MAX.

MIN.
4.3 2

EMITTER
BASE
COLLECTOR

MIN.

TYP.

MAX.

UNITS

Breakdown Voltage

lOOMdc,

BVc E s

B = 0)

Vdc

30

Collector Cutoff Current

ICBO

100

nAdc

Iebo

100

nAdc

0.9

1.5

Vdc

1.45

2.0

Vdc

(VCB = 30Vdc, I E =0)

Emitter Cutoff Current

(VBE =

DC

8.0 Vdc,

=0)

Current Gain

(I c

(I c

lOmAdc,

VCE

= 5.0 Vdc)

= lOOmAdc,

VCE

= 5.0 Vdc)

MPS-A65
MPS-A66
MPS-A65
MPS-A66

*h FE
*h FE
*h FE
*h FE

50,000
75,000
20,000
40,000

Collector-Emitter Saturation Voltage

B = 0.1
Base-Emitter On- Voltage
(I c

= lOOmAdc,

(I c

= 100 mAdc,

VCE

Dynamic

= 5.0 Vdc)

VCE(sat)

*VBE(on)

Characteristics

Current-Gain
(I c

mAdc)

- Bandwidth

= 30 mAdc,

VCE

Output Capacitance
(VCB = 10 Vdc, I E =

Product

= 10 Vdc,
0, f

125

MHz

Ccb

2.5

pF

NF

2.0

dB

100

= 50 MHz)

= 100 kHz)

Noise Figure
(I c

= 1.0 mAdc,
= 1.0 kHz)

*Pulse Test:

VCE

Pulse Width

= 5.0 Vdc,

< 300

jus,

Rs

= 100k ohms,

duty cycle

< 2.0%.
1355


MPS-A65

MPS-A66
00000
B

35

--[

- -++ +H

10
t

TYPICAL

VCE -5V

100 c

Hi
j?

25C

" 1000 x t
B
c
TYPICAL

z
o
10000
8
6

I
3

-55C

OOC
,

lii

1000
8
6

<
2

i?

100
.01

10
I

c -COLLECTOR

IO0

10

CURRENT-mA

FORWARD CURRENT TRANSFER RATIO

VS. COLLECTOR CURRENT

COLLECTOR EMITTER SATURATION VOLTAGE

VS. COLLECTOR CURRENT

>
UJ

-J

Z
o
5
IE
Z>

<

TYPICAL
2.0

en
a:

1.8

X
w

1.6

McVBElSJj )

^^^j

UJ
VI

<
i

1.2

25C

JO

>

V BE
II

1.0

'

'

'

100C

v BE (SAT

UJ

S
<

ID

>*
.0
.1

100

I--C0LLECT0R CURRENT-mA

10

1X1
l

100

c -COLLECTOR CURRENT -mA

BASE EMITTER VOLTAGE (V CE = 5V) AND BASE

EMITTER SATURATION VOLTAGE (IC = 1000 x
IB)

VS.

COLLECTOR CURRENT

1356

too

Silicon

Transistors

The MPS-A70

is

PNP

a Planar Epitaxial

Transistor designed

for general purpose amplifier applications.

PNP

Valves

Are Negative: Observe Proper

absolute

maximum

Polarity.

-03
-02-

ratings:

(Ta

AD

25C, unless otherwise specified)

^b2VL^b
Collector to Emitter

VcEO
VCBO
Vebo

Collector to Base

Emitter to Base

40
40
4

Volts

SEATING PLANE

T A < 25C
Total Power Tc < 25C
Derate Factor T A >25C
Derate Factor Tc >25C

Volts
SYMBOL

100

mA

PT

350

mW

PT

1.0

Watt

2.8

mW/
mW/

8.0

MILLIMETERS
MIN.
MAX.
4.3 2

fb

.4

4,0

4.4 5

7
7

.4

80

3.1

2.41

Junction

T stg -55
TL

Lead (1/16" + 1/32" from

+150
to +150
+230

-55 to

t.

C
C

L2

6.3 5

cr*

B = 0)

22
9
1

4.1 9
2.67

.1

25

.09 5

1.3

.16 5

.1

2.0 3

.1

1.270

.2

.1

2.670

.0

.05

50
1

80

1,3

3
3
2

.10 5

3VCEO

40

Vdc

3Vc E o

4.0

Vdc

100

nAdc

40

400

0.25

Vdc

CBO

= lOVdc)

UNITS

MAX.

Current Gain

VCE

.0

MIN.

SYMBOL

= 100 M Adc, I c = 0)

= 5.0mAdc,

.0

= 25c, unless otherwise specified)

(VCB =30Vdc, I E =0)

(I c

75 .205

Collector -Cutoff Current

DC

.1

THIS SIDE.
3.(THREE LEADS)Ab2 APPLIES BETWEEN L) AND L 2
Ab APPLIES BETWEEN L2 AND 12.70 MM (.500")

Emitter-Base Breakdown Voltage

(I E

.0

5.2

NOTES

THREE LEADS

Breakdown Voltage
I

.0

8 2

MAX.
.210

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

Static Characteristics

= l.OmAdc,

MIN.
.17

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L, AND BEYOND 12. 70 MM 1.500")
FROM SEATING PLANE.

electrical characteristics:

(I c

COLLECTOR

INCHES

NOTES:

case for 10 sec.)

Collector-Emitter

BASE

3.

50 1.395 .045 .055

4.320
3 5 .170

12.700
.500

U
s

Tj

.4

EMITTER

2.

I.I

2.920

Temperature

5.3 3
.5 5

3.4 3

Operating

I.

TO-92

Dissipation

Total Power

-4

Volts

A
Ic

Current
Collector

0
^-LZ-A

Voltages

''FE

Collector-Emitter Saturation Voltage

(I c

= lOmAdc,

Dynamic

B = l.OmAdc)

Characteristics

Current-Gain-Bandwidth Product
(I c = 5.0mAdc, VCE = lOVdc,

Output Capacitance
(VCB = 10 Vdc, I E =

0, f

= 100 MHz)

fT

Cob

= 100 kHz)

1357

MHz

125
4.0

pF

Silicon

Transistors

The MPS3638 and MPS3638A

PNP

are planar, epitaxial, passivated

silicon transistors

intended for general purpose applications. The units feature low collector saturation
voltage, controlled current gain

absolute

and excellent frequency response.

maximum

ratings

(T A =25C,unless otherwise specified)

Voltages

Collector to Emitter

VcEO

Emitter to Base

Vbbo

Collector to Base

VCBO

Collector to Emitter

VcBS

I.

2.

SYMBOL

Current

Collector (steady state)

Ic

Collector (peak, pulsed 10 /msec,

Ic

2% Duty

350mA
-700mA

Cycle)

S
S

25C)

Pt

0.700

25C)

Pt

0.360

g 25 C C)
25C)

DerateFactor(T A

7.0

3.6

Watts
Watts

L
Li

7
7

4.4 5
3.1

.5
.4

5.2

80

4.1

3.

INCHES
MIN.

MAX.

.17

.21

.0

8 2

.0

6
6

.0
.0

22
9

-65 to

Operating

T,

-65 to

Lead Soldering, y16 " i& 2 "

from case for 10 seconds max.

Tl

electrical characteristics:
STATIC CHARACTERISTICS
Collector-Base

= -100M,

(T A =25C,unless otherwise

.1

1.270

6.350
2.920

2.0 3

.2

2.670

.0

.1

50
1

80

+150C
+125C
+260C

THIS SIDE.
3.(THREE LEADS)b2 APPLIES BETWEEN L( AN!
$b APPLIES BETWEEN L2 AND 12.70 MM

FROM THE SEATING PLANE. DIAMETER

CONTROLLED IN L. AND BEYOND I2.70M
FROM SEATING PLANE.

I:

Min.

= 0)

Ib

Max.

Units

V(BR)CBO

-25

Volts

V(BR)CEO

-25
-25

Volts

V (BE)CES

Volts

Breakdown Voltage

10^A,

Ic

0)

Volts

= 1mA, Vce = 10V)

(Ic = 10mA, Vce = 10V)
(Ic

-50mA, Vce

-300mA, Vce

-IV)

-2V)

MPS3638A
TMPS3638
IMPS3638A
JMPS3638
IMPS3638A
rMPS3638
IMPS3638A

h FB *
hp E *

h FE *

80
20

100
30

70 (Typ.)

100

20

40 (Typ.)

20

50 (Typ.)

Collector Saturation Voltage

=
=

50mA, I B = 2.5mA)
300mA, I B = 30mA)

VcE<SAT) *

Vce (sat)

-.250

Volts

-1.0

Volts

1.1

Volts

-2.0

Volts

Base Saturation Voltage

(Ic
(Ic

=
=

3
2

2.C0NT0UR OF PACKAGE UNCONTROLLED OU

Forward Current Transfer Ratio

(Io

.10 5

Breakdown Voltage

= 10mA, I B = 0)
(Ic = 100mA,V be =0)

(Ic

1,3

.05

specified)

Symbol

(Ic

.1

2.67
.09 5
5
1.150 1.39 5 .045 .0 5 5
3.430 4.3 2
.13 5 .170

12.700
.5 00
2.41

Breakdown Voltage

Collector-Emitter

(Ic

1.3

75 .205
90 .12 5 65
.1

THREE LEADS

1.

Tsto

do

NOTES

NOTES:

Storage

5.3 3

L2

mW/C
mW/C

Temperature

(Ik

.4

Derate Factor (T c

Emitter-Base

.4

Total Power (T A

(Ic

f>b

e1

Total Power (To

4.3 2

*b2
4-D

Dissipation

TO -92
MILLIMETERS
MIN.
MAX.

EMITTER
BASE
COLLECTOR

-50mA, I B = -2.5mA)
-300mA, Ib = -30mA)

VBE (SAT) *
VBE

(SAT) *

1358

-.80

MPS3638,
Min.

Symbol

STATIC CHARACTERISTICS (Continued)

Max.

Units

Collector Cutoff Current

(Vce=-15V,Vbe=0
(Vcb

-15V, Vbe

0,

Ices

TA

*Pulse conditions of 300

/isec

100C)
duration,

Ices

2%

-35
10

nA

duty cycle

DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
(Ic

=-10mA, Vce

-10V,

1kHz)

hr.

MPS3638
MPS3638A

-10V,

1kHz)

hie

MPS3638
MPS3638A

480 (Typ.)

2000

ohms

-10V,

1kHz)

h.

MPS3638
MPS3638A

80 (Typ.)

1200

umhos
IO""

1kHz)

MPS3638
MPS3638A

2600

162 (Typ.)

1500

io-

25
100

Input Impedance

(Ic

=-10mA, Vce

Output Admittance
(Ic

=-10mA, Vce

Reverse Voltage Transfer Ratio

(Ic

=-10mA, Vce

-10V,

Output Capacitance, common base

(Vcb

Input Capacitance,

(Veb

-10V,f

1MHz)

Ccl

10

pF

35

pF

common base

-0.5V,

1MHz)

Cel

Gain bandwidth product

(Vce

-3V,

-10V,

Ic

=-50mA)

MHz

100 (Typ.)

Delay Time

(Vce

Vbb(o>
Rise

Ic

=-300mA,

20

=-30mA,

Ibi

+3.1V) (See Test Circuit)

Time

(Vce

Vbb<m>

-10V,

Ic

=-300mA,

Ibi

=-30mA,

t,

70

t,

75

+3.1V) (See Test Circuit)

Turn-on Time
(Ic

=-300mA,

Ibi

=-30mA)

(See Test Circuit)

Storage Time

(Voo

= 10V, Ic ^300mA, Ibi =^30mA, Ib = 30mA)

t,

140

t.

70

(See Test Circuit)

Fall

Time

(Vce

= iOV, Ic

=-300mA,

I Bi

=-30mA,

I B2

= 30mA)

(See Test Circuit)

Turn-off Time

(Io

=-300mA,

Ibi

=^30mA,

I B2

= 30mA)

170

tot

(See Test Circuit)

VBB- + 3.IV

TO SAMPLING SCOPE
tr

<i.onsec.

Z|N

V|N-9.0V
t r , tf<e.onsec
Z| N SOfi
PULSE WIDTH = O.S^SeC

1359

2I00K

Silicon

Transistors

The General

Electric MPS3702 and MPS3703 are silicon,

planar, epitaxial, passivated transistors, designed for general audio frequency applications and linear amplifiers. For complimentary
types see MPS3704, MPS3705 and MPS3706 specification.
Voltage and current valves for
are negative, observe proper bias polarity.

PNP

NPN

PNP

maximum

absolute

ratings:

(t a

=25c

MPS3702

Voltages
Collector to Emitter
Collector to Base
Emitter to Base

Vceo
Vcbo
Vebo

Current
Collector

unless otherwise specified)

EMITTER

MPS3703

25
40

30
50

TO-92
SYMBOL

Volts
Volts
Volts

4b

fa
4D

mA

200

Ic

Dissipation

Total Power TA
Total Power T c
Derate Factor T,
Derate Factor T,

25C
25C

Pt
Pt

350

>25C

>25C

Temperature
Storage and Operating
Lead (1/16" 1/32" from

ST(}>

-55 to

150

(Ic = 10mA, I B = 0)
Collector-base breakdown voltage
E

55

48

.0

2.41
I.I

.1

3.4 3

12.700

L2

6.3 5

4.32

2.0 3

=0)

Emitter-base breakdown voltage

(Ie = lOOuA, I c = 0^

20V,

3.

.0

45

.5

00
-

.2

2.670

.0

.1

50
1

80

5V,

Ic

c = 50mA,

MPS3703

V(BR)CEO*

25

30

Volts

V(BR)CBO

40

50

Volts

Volts

Max.

V(BR)EBO

0)

PRO

60

= 5mA)

'

CE(sat)*

'

BE(on)

Base-emitter voltage

(Vce =5V, I c

Min.

Max.

Units

= 50mA)

100

100

nA

100

100

nA

300

30

.25
.6

.6

150
.25

Volts

Volts

DYNAMIC CHARACTERISTICS
Collector-base capacitance

(Vcb

10V,

0, f

= 1MHz)

12

() i,

Current Gain-Bandwidth Product

(Vce = 5V, I c = 50mA, f = 20MHz)
*Pulse Conditions: Pulse Width

!t

.05

3
2

.10 5

Min.

= 50mA)

IB

.105
55

.0

(THREE LEADS) 4b2 APPLIES BETWEEN L AND L 2

4 b APPLIES BETWEEN L2 AND 12.70 MM ( 5C
FROM THE SEATING PLANE. DIAMETER IS Ul
CONTROLLED IN L, AND BEYOND I2.70MNH!
FROM SEATING PLANE.

Symbol

Collector-emitter saturation voltage

(I

.01

THREE LEADS

(T A =25 C unless otherwise specified)

Emitter-base reverse current

(V EB =3V, I c = 0)
Forward current transfer ratio

(V CE

1.3

9
75 .205

Collector cutoff current

(V CB

0??

NOTES

.13 5 .170

MAX
210

.12 5 .16 5

1.270

2.920

6
6

095

2.67

50 1.395

L|

5.2

80 4 190

MIN.
.17

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIC

MPS3702

COLLECTOR

INCHES

THIS SIDE.

STATIC CHARACTERISTICS
Collector-emitter breakdown voltage

lOOuA,

.4

<

1.

+260

electrical characteristics:

.4

BASE

3.

NOTES:
1

case for 10 sec.)

(I c

5.3 3

44 5
3.1

mW/C
mW/C

2.8

4.3 2

Watts
Watts

1.0

MILLIMETERS
MIN.
MAX.

2.

300 m s and duty cycle

100

g 2%
1360

12

100

pf

MHz

*=

--

'

MPS3702, 3
TYPICAL CHARACTERISTIC CURVES
-1.2
1

,'

y
III

-6

'

T A -55-C

JjJ

I
1

T I25*C
A

'

'I
-10

-1

-1000

-100

I.-COLLECTOR CURRENT-mA

VOLTAGE
COLLECTOR CURRENT

BASE-EMITTER SATURATION
VS.

BETA VS. COLLECTOR CURRENT

1^

-50
-45

-40

-55
e

-30

1
-25

^
<^
<^

TA >25*C

^^-^
^**^"^

~5c'i"

^^-

7*

-20

f.12.

_60j^-

-to

T ft .-5

""ioT^

-15

"

^r:
r^_
-zcv*

-5

A"" C

"^W
"7

* ^"
-=-

-IOpt>
r~~

*^*^

IB'*

-COLLECTOR VOLTAGE-VOLTS

= -r

^:.V*

J
'.

is'c

V -JVC J...

"

III

_2_

-?

I c

COLLECTOR CHARACTERISTICS

COLLECTOR CURRENT -J

COLLECTOR-EMITTER SATURATION

VOLTAGE

VS.

COLLECTOR CURRENT

1361

Silicon

Transistors

MPS3704,05,06

The General

Electric

MPS3704, MPS3705 and MPS3706

taxial, passivated transistors

amplifiers.

For complimentary

absolute

are silicon

NPN

planar, epi-

designed for general audio frequency applications and linear

PNP

maximum

Voltages
Collector to Emitter
Collector to Base
Emitter to Base

MPS3702 and MPS3703

types see

ratings

(T A

25C

specifications.

unless otherwise specified)

MPS3704
MPS3705

MPS3706

30
50

20
40

2.

EMITTER
BASE

COLLECTOR

Vceo
Vcbo
Vebo

Volts
Volts
Volts

TO- 92

SYMBOL
A

Current
Collector

mA

600

Ic

Pt
Pt

Watts
Watts

.350
1.0

8.0

*b

.4
.4

180

2.41

L2

I.I

.5
.4

5
8 2

5200

4.4 5

Li

5.3 3

7
7

e
e1
J

mW/C
mW/C

2.8

4.3 2

*t>2

*D

Dissipation

Total Power T A ^ 25C

Total Power T c S 25C
Derate Factor T A > 25C
Derate Factor T c > 25C

MILLIMETERS
MIN.
MAX.

90

4.1

2.67

50 1.395

34 3
12.700

4.3 2

INCHES
MIN.
.0

Temperature
Storage and Operating
Lead (1/16" 1/32" from

2?

.0

6 .01 9
.17 5 .205
.12 5 .16 5
.09 5
5
.0 4 5 055
.13 5 .170
.0

NOTES
1.3

.1

.5

1.270

00
-

.05

6.3 5
.2 50

2.920
5
2.030 2.670 .080
.1

MAX.
.210

.17

1.3

3
3
2

.10 5

NOTES:

-55 to

T. r

150

I.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSID

+260

case for 10 sec.)

THIS SIDE.
3.ITHREE LEADS) *b2 APPLIES BETWEEN L| AND L
2
$b APPLIES BETWEEN Lz AND 12.70 MM (.50i

FROM THE SEATING PLANE. DIAMETER IS UN

CONTROLLED IN L, AND BEYOND 12. 70 MM 5
FROM SEATING PLANE.
(

electrical characteristics:

ct a

= 25c

unless otherwise specified)

MPS3704
STATIC CHARACTERISTICS
Collector-Emitter

ymbol

MPS3705
Min.

Max.

MPS3706
Min.

Max.

Units

(BR)CBO

30
50

30
50

20
40

Volts
Volts

(BR)EBO

Volts

(BR)CEO'

Emitter-Base Breakdown Voltage

E

Max.

Breakdown Voltage

(Ic = 10mA, I B = 0)
Collector-Base Breakdown Voltage
(I c = 100 uA, I E =0)
(I

Min.

100uA,I c =0)

Collector Cutoff Current

(Vcb
V, I E =0)
Emitter-Base Reverse Current

=20

(V EB = 3 V, Ic = 0)
Forward Current Transfer Ratio
(V CE = 2 V, Ic = 50mA)
Collector-Emitter Saturation Voltage
(I c = 100mA, Ib = 5mA)
Base-Emitter Voltage
(V CE = 2 V, Ic = 100mA)

lEBO

100

'FE*
'

100

100

100

nA

100

100

100

nA

300

50

150

30

600
Volts

CE(SAT)
.5

BE(ON)*

Volts

.5

DYNAMIC CHARACTERISTICS
Collector-Base Capacitance
(Vcb = 10 V, I e = 0, f

= 1MHz)

Current Gain-Bandwidth Product

(V CE = 2 V, Ic = 50mA, f = 20MHz)
*Pulse Conditions: Pulse Width

12

100

300 us and duty cycle

S 2%

1362

12

100

12

100

Pf

MHz

MPS3704,05,06
TYPICAL CHARACTERISTIC CURVES

V
"

45

5/

^X

-^

40

Joj>
30

=,

o
o

25

TA

25*C

^
^

ftfWA

__

S 20

^'
yJ
y

60 /iA

/1

(0

40*A

,^-

5
1

(0

15

V CE -

.o

20

25

30

35

40

45

50

COLLECTOR CURRENT -VOLTS

COLLECTOR CHARACTERISTICS

- COLLECTOR CURRENT-mA

BETA VS. COLLECTOR CURRENT

1.0

1
f

-55^

2 5

2&.

"
3 S

.6

?*** ^

I25t

3
> <
UJ

I C " COLLECTOR

CURRENT-mA

BASE-EMITTER SATURATION
VS.

=p

=fc

VOLTAGE

COLLECTOR CURRENT

-H+t-

Tfr

/
1

5
i

';

/
5

^
S

""

'/('
-

>

fn
^-

L
^

-COLLECTOR

ClBMNT-

COLLECTOR-EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT

1363

Silicon

@isa@

123^^31^21

Transistors

MPS5172 MPS6076
The General

MPS5172 and MPS6076

Electric

transistors are

designed for general purpose applications. The planar, passivated construction assures excellent device stability and life.

This high performance and high value

is

made

possible

~? 3

by

*b2N

advanced manufacturing techniques, epoxy encapsulation and

of

utilization

--Q-

full line

maximum

2. BASE

TO-92
SYMBOL
A

Voltages

VcEO
^CBO
^EBO

Collector to Base

Emitter to Base
Current
Collector (Steady-State )f

Ip

25
25

Volts

Volts

100

f>b
j,bz

Volts

*D

mA

TA

< 25Ctt

360

stg

Lead (1/16" 1/32" from

case for 10 sec. max.)
t Determined
current.

tt Derate 3.6

from power

mW/C

4.4 5

80
50

I.I

3.4 3

12.700

6.3 5

2.920
s

.4

2.41

L2

Temperature
Storage
Operating

.4

3.1

mW

4.3 2

Ll

+150
c
+125
c
+260
c

-55 to

I.

MILLIMETERS
MIN.
MAX.

e
e1
J

Dissipation

Total Power

-4

SEATING PLANE 3. COLLECTOR

ratings: (TA = 25C unless otherwise specified)

Collector to Emitter

2.0 3

5.3 3
.5 5
.4

8 2

5.2

EMITTER
INCHES

MIN.
.17
.0
.0
.1

MAX.

210
6 .0 2?
6

.01

NOTES
1.3

75 .205

90

.12 5
65
.09 5
5
1.395 .0 4 5 055
4.3 2
3 5 .170
4.1

.1

2.67

.1

.1

.5

1.270

00
-

.2

50

.1

2.670 .080

.05

1,

3
3
2

.10 5

NOTES
THREE LEADS
2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE
I.

THIS SIDE.
3.1THREE LEADS)tfb2 APPLIES BETWEEN L, AND L
2
^b APPLIES BETWEEN L 2 AND I2.70MM (.500")
.

limitations

due to saturation voltage

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND I2.70MM 500")
FROM SEATING PLANE.

at this

increase in ambient temperature above 25C.

electrical characteristics

'

(TA = 25 C unless otherwise specified)

Static Characteristics

SYMBOL

MIN.

MAX.

UNITS

Collector Cutoff Current

(Vcb = 25V)
(VCB = 25V; TA = 100C)
(VCB = 25V)

IcBO
ICBO

100
10

Ices

100

nA
HA
nA

Iebo
!ebo

100
100

nA
nA

Emitter Cutoff Current

(VEB = 5V)
(Veb = 3V)

MPS5172
MPS6076

Forward Current Transfer Ratio

(VCE = 10V, I c = 10 mA)
Collector-Emitter
(I c

= 10

*h FE

100

500

^(BR)CEO

25

Volts

v CE(sat)

.25

Volts

'BE(sat)

.80

Volts

VBE

0.5

1.2

Volts

life

100

750

1.0

13

Breakdown Voltage

mA)

Collector Saturation Voltage

(I c

= 10 mA,

IB

1mA)

Base Saturation Voltage

(I c = 10 mA, I B =
Base Emitter Voltage)

1mA)

(VCE = 10V, I c = 10 mA)

Dynamic Characteristics
Forward Current Transfer Ratio
(VCE = 10V, I c = 10 mA, f =

kHz)

Output Capacitance, Common Base

(VCB = 10V, I E = 0, f= 1 MHz)

-cb

Gain Bandwidth Product

(VCB = 5V, I c = 2mA)

fr

* Typically a

4D

>b

-L-2

beta distribution. Significant savings

may be realized by designing equipment utilizing these "full
line distribution" type transistors.

absolute

if- - ?z -

minimum

of

50% of

the distribution will have h FE

> 150

(Typical

at stated conditions.

1364

200)

PF

MHz
Note: Polarities are Absolute.

ELECTRONIC

Silicon

atAonatr-

Transistors

SEMICOHDUCTORS

MPS6516-MPS6519

These Silicon Planar Epitaxial Passivated Complementary Transistors are designed for general purpose amplifier applications.
Polarities are absolute, observe

maximum

absolute

PNP/NPN

polarity.

(t a = 25c unless otherwise specified)

ratings:

NPN

PNP

30
25

UNITS

Voltages
Collector to Emitter

MPS6512, 13
MPS6514, 15
MPS6516, 17, 18

MPS6519

Vceo
Vceo
Vceo
Vceo

Volts

40

Volts

25

Volts

13, 14, 15

2.

TO-92

17, 18

MPS6519
Emitter to Base

40

Volts

40
25

Volts

*>D

Volts

Volts

Fj

fb

.4

*t>2

.4

100

Ic

100

Ll

mA

LZ
s

TA
Power T c

Total

Derating Factor

Derating Factor

< 25C
< 25
T A > 25 C
T c > 25

3.1

2.41
1

I.I

PT

350

350

PT

2.8

2.8

mW

NOTES:

Watt

2.

mW/C
mW/C

1.

5.3 3
.5 5
,4 8 2

3.4 3

12.700

6.3 5

2.0 3

MAX.
.2

.0

2 2

.0

.1

,J

2.67

4.32

6
6

.0

4.1

.0

.0

1.3

3
1

.16 5

.105
55

45

.0

.13 5
.5

7b_, .20 5

25

^95
h

NOTES

MIN.
.17

5.20

50 1.395

2.920

Dissipation

Total Power

4.4 5

Current
Collector

4.3 2

COLLECTOR

3.

INCHES

MILLIMETERS
MAX.
MIN.

SYMBOL

Vcbo
Vcbo
Vcbo
Vebo

/.EMITTER
BASE

SEATING PLANE

Collector to Base

MPS6512,
MPS6516,

Volts

.1

00

70

1,3

- .05
1.270

.2 50

3
3

2.670

.1

.0

80

.10 5

THREE LEADS
CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3.(THREE LEADS) b2 APPLIES BETWEEN L ANDL 2
^.b APPLIES BETWEEN L.2 AND 12.70 MM (.500')
FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L. AND BEYOND 12. 70 MM 1.500")
t

FROM SEATING PLANE.

Temperature
Tj

Operating
Storage

TsTG

Lead (1/16" 1/32" from

case for 10 sec.)

TL

-55Cto +150C
-55Cto +150C
260C

electrical characteristics:

C
C
C

<t a = 25c unless otherwise specified)

MPS6512 Thru MPS6515 (NPN)

MAX.

UNITS

SYMBOL

MIN.

V(BR)CEO
V(BR)CEO

30

Volts

25

Volts

Static Characteristics

Collector-Emitter
(I c

= .5mA,

IB

Breakdown Voltage
= 0)
MPS6512, 13
MPS6514, 15

Emitter-Base Breakdown Voltage

(I E

10(1 A,

Volts

V(BR)EBO

c = 0)

Collector Cutoff Current

ICBO
ICBO

(V CB = 30V, I E = 0)
(VCB = 30V, I E = 0, T A = 60C)

1365

50

TjA

UA

MPS6512-MPS6515
MPS6516-MPS6519

MPS6512 Thru MPS6515 (NPN)

SYMBOL
MIN.

TYP.

MAX.

Static Characteristics (continued)

UNITS

Forward Current Transfer Ratio

(I c = 2mA, V
CE = 10V)

MPS6512
MPS6513
MPS6514
MPS6515
(I c

= 100mA,

V CE

hFE
hFE
h FE

90
150

hFE

250

50

100
180

300
500

= 10V)

MPS6512
MPS6513
MPS6514
MPS6515

fh FE
th FE
th FE
th FE

30
60

90
150

Collector-Emitter Saturation Voltage

(I c

= 50mA,

Dynamic

B =

5mA)

tv,CE(sat)

Volts

Characteristics

Current Gain, Bandwidth Product

(I c

2mA,

V CE

= 10V, f = 100 MHz)

MPS6512, 13
MPS6514, 15
(I c

= 10mA,

VCE

= 10V,

f,

MHz

250
390

fT

= 100 MHz)

MPS6512, 13
MPS6514, 15

f,

330
480

f,

Collector-Base Capacitance

(V CB = 10V, I E =

o, f

= 100 kHz)

Cob

3.5

PF

Noise Figure
(Ic

BW=

10M, V CE

= 5V, Rs = 10K Ohms,

15.7 kHz, f = 10

Hz

to

NF

dB

10 kHz)

1366

MPS6512-MPS6515
MPS6516-MPS6519
MPS6515 Thru MPS6519 (PNP)
MIN.
SYMBOL

TYP.

MAX.

UNITS

Static Characteristics

Breakdown Voltage

Collector-Emitter
(I c

= -5mA,

B = 0)

MPS6516,

17, 18

MPS6519

V(BR)CEO

40

Volts

V(BR)CEO

25

Volts

Emitter-Base Breakdown Voltage

(I E

= 10mA, Ic = 0)

Volts

V(BR)EBO

Collector Cutoff Current

(V CB = 30V, I E = 0)

MPS6516,

17, 18

IcBO

50

TjA

IcBO

50

T?A

ICBO

juA

ICBO

HA

(V CB = 20V, I E = 0)

MPS6519
(V CB = 30V,

IE =

0,

TA

= 60 C)

MPS6516,
(V CB = 20V, I E =

0,

17, 18

T A = 60 C)
MPS6519

Forward Current Transfer Ratio

(I c = 2mA, V CE = 10V)

MPS6516
MPS6517
MPS6518
MPS6519
(I c

100mA,

V CE

h FE

50

100

h FE
hFE
h FE

90
150

180
300

250

500

= 10V)

MPS6516
MPS6517
MPS6518
MPS6519

30

th FE
th FE
th FE
fh FE

60

90
150

Collector-Emitter Saturation Voltage

(I c

= 50mA,

Dynamic

IB

mA)

.5

tVcE(sat)

Volts

Characteristics

Current Gain Bandwidth Product

(I c

= 2mA,

V CE

= 10V,

= 100 MHz)

MPS6516, 17
MPS6518, 19
(I c = 10mA, V CE = 10V, f = 100 MHz)
MPS6516, 17
MPS6518, 19

200

MHz

340

270
420

fT

fT

Collector-Base Capacitance

(V CB = 10V, I E =

0, f

= 100 KHz)

PF

Cot

Noise Figure

dB

= 10/uA, VCE = 5V, Rs = lOKfi

BW = 15.7 kHz, f = 10Hz to 10kHz)

(I c

f Pulse

Width

< 300ms,

Duty Cycle

< 2%.

1367

Silicon

MPS6530
MPS6531
MPS6532

Transistors

The MPS6530, MPS6531 and MPS6532 are

vated

NPN

silicon planar epitaxial passi-

transistors designed for general purpose switching

and amplifier

applications.

maximum

absolute

ratings:

Voltages

(t,a

MPS6530 &

Collector to Emitter

Vceo
VCBO
Vebo

Collector to Base

Emitter to Base

- 25 C unless otherwise specified)

31

-A
r*-Q-

40

30

Volts

60

50

Volts

Volts

SEATING PLANE

Current

600

Ic

600

mA

fb

*b2

Dissipation

^D

T A < 25C
Total Power T c < 25C
Derate Factor T A > 25C
Derate Factor T c > 25C
Total Power

PT

350

350

Watts

1.0

1.0

2.80

2.80

8.0

8.0

mW/C
mW/C

4.4 5

80

3.1

2.41

L
Li

L2

5.3 3

.4

Watts

MAX.

MIN.

.107

E
ei

PT

MILLIMETERS
4.3 2

Operating

Tj

Storage

TsTG

Lead (1/16" + 1/32" from

case for 10 sec.)

TL

-55Cto+150C
-55Cto+150C
+230C

48
5.2

90

4.1

COLLECTOR

MIN.

MAX.

.17

.2

.0

6.3 5

2.0 3

.1

.5

00

.0

55

.1

70

1,3

- .05
1.270

.2 50

1.3

75

50 1.395 .045
^1430 4.3 2 .13 5
12.700

6 .0??
6 .0 9

.20 5
.12 5 .16 5
.09 5
5
.1

2.67

3.

INCHES

.0

EMITTER
BASE

u-U

2.920

Temperature

.5

2.

I.

TO-92
SYMBOL

Collector

J^NUbKUb

l,

MPS6532

.1

2.670 .080

3
3
2

.10 5

NOTES:

1.

THREE LEADS

2.C0NTOUR OF PACKAGE UNCONTROLLED OUTSI

C
C

THIS SIDE.
3.(THREE LEADS) $b2 APPLIES BETWEEN L AND U
^b APPLIES BETWEEN L2 AND 12.70 MM (.5'
(

FROM THE SEATING PLANE. DIAMETER IS L

CONTROLLED IN L. AND BEYOND 12. 70 MM
FROM SEATING PLANE.
(

electrical characteristi CS!

(TA = 25C unless otherwise specified)

Static Characteristics

Breakdown Voltage
(I c = 10mA, I B = 0)
(I c = 10mA, V BE = 0)
Collector-Base Breakdown Voltage
(I c = 10m A, I E = 0)

SYMBOL

MIN.

- MPS6530, MPS6531
- MPS6532

V(BR)CEO
V(BR)CEO

40

Volts

30

Volts

- MPS6530, MPS6531
- GPS6532

V(BR)CBO
V(BR)CBO

60

Volts

50

Volts

V(BR)EBO

Volts

MAX.

UNITS

Collector-Emitter

(Ic = 10/iA,

E = 0)

Emitter-Base Breakdown Voltage

(I E

= 10/iA, Ic = 0)

Collector Cutoff Current

(VCB
(V CB
(VCB
(V CB

= 40V,

IE

= 30V,

= 0)

E = 0)

= 40V, I E =
= 30V, I E =

0,

TA =
TA =

60 C)
60 C)

MPS6530, MPS6531

IcBO

MPS6532

'CBO
IcBO

MPS6530, MPS6531

100

nA
nA

J"A

50

MPS6532

Emitter-Base Reverse Current

(V EB = 4V,

Ic = 0)

Forward Current Transfer Ratio

(V CE = IV, I c = 10mA)

(VCE =
(VCE =

IV,

c =

10mA)
IV, I c = 100mA)
I

MPS6530
MPS6531
MPS6530

h FE
h EE
th FE
1368

100

EBO
30
60
40

120

nA

MPS6530, MPS6531, MPS6532

SYMBOL

Static Characteristics (continued)

Forward Current Transfer Ratio (continued)

- MPS6531
(VCE = IV, I c = 100mA)
- MPS6532
(V CE = IV, Ic = 100mA)
- MPS6530
(VCE = 10V, I c = 500mA)

fh F E
thFE
fhFE
th F E

- MPS6531

(VCE = 10V, I c = 500mA)

MIN.

MAX.

90
30
25

270

UNITS

50

Collector-Emitter Saturation Voltage

- MPS6530, MPS6532
- MPS6531

= 100mA, I B = 10mA)
(I c = 100mA, I B = 10mA)

(I c

Base-Emitter Saturation Voltage

= 100mA,
(I c = 100mA,

(I c

Dynamic

- MPS6530, MPS6531
- MPS6532

10mA)
= 10mA)

B =

IB

VcE(sat)

.5

Volts

VcE(sat)

.3

Volts

Volts

1.2

Volts

VCE(sat)
VCE(sat)

Characteristics

Collector-Base Capacitance

(VCB = 10V, I E = 0,f =

t Pulse

width

< 300/Llsec,

pF

MHz)

Duty Cycle

-xb

< 2%.

1369

Silicon

MPS6533
MPS6534
MPS6535

Transistors

The MPS6533, MPS6534 and MPS6535

PNP

are silicon planar epitaxial passivated

transistors designed for general purpose switching

cations. Voltage

and current values for

PNP

and amplifier

appli-

are negative: observe proper

bias polarity.

maximum

absolute

ratings:

Voltages

(ta = 25c unless otherwise specified)

MPS6533 & 34

Collector to Emitter
Collector to Base

Emitter to Base

Vceo
Vcbo
VEBO

MPS6535

40

30

Volts

40

30

Volts

Volts

I.

Current

SYMBOL

Collector

600

600

mA

Dissipation

TA < 25C
T c < 25C
Factor T A > 25C
Factor T c > 25C

Total Power
Total Power

Derate
Derate

350

350

1.0

1.0

Watts

2.8

2.8

8.0

8.0

mW/C
mW/C

TO- 92
MILLIMETERS
MIN.
MAX.
4.3 2

*>b

.4

*b2

.4

tf>D

PT
PT

Watts

2.41

L2

I.I

6.3 5

2.920
s

Tj

Storage

TsTG

Lead (1/16" 1/32" from

-55Cto+150 C
-55Cto+150 C
+230C

TL

C
c
c

2.0 3

COLLECTOR

MIN.

MAX.

.17

.2

.0

NOTES

.0

6 r 022

1.3

.1

.1

50

3.

INCHES

6 .0 9
75" .20 5
5.2
4 190 .12 5 .16 5
2.67
.09 5
5
1.39 5 .0 4 5 .0 5 5
4. 32
.13 5 .1 70

3.4 3

12.700

48

80

3.1

Li

.5

4.4 5

5.3 3

7
7

e
el

Temperature
Operating

EMITTER

2.8ASE

.500

1.270

.2 50

.1

2.670 .080

.0

1,3

3
2

.10 5

NOTES:
1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSII

THIS SIDE.
3.(THREE LEADS) ,/,b2 APPLIES DETWEEN L) AND L2
#b APPLIES BETWEEN Lj AND 12.70 MM SC
FROM THE SEATING PLANE. DIAMETER IS Ul

case for 10 sec.)

CONTROLLED IN L, AND BEYOND

FROM SEATING PLANE.

electrical characterise CS:

(I c

(Ic

70MM(

(TA = 25C unless otherwise specified)

Static Characteristics

Collector-Emitter

12

SYMBOL

MIN.

MPS6533, MPS6534

VBR)CEO

40

Volts

MPS6535

V(BR)CEO

30

Volts

MPS6533, MPS6534

V( B R)CBO
V(BR)CBO

40

Volts

30

Volts

MAX.

UNITS

Breakdown Voltage

= 10mA, I B = 0)
= 10mA, V BE = 0)

Breakdown Voltage
= 10m A, I E = 0)
(Ic = 10M, I E = 0)
Emitter-Base Breakdown Voltage
(Ie = 10/xA, I c = 0)
Collector-Base
(I c

MPS6535

V( B R) E BO

Volts

Collector Cutoff Current

(VCB
(VCB
(VCB
(VCB

= 30V, I E = 0)
= 20V, I E = 0)
= 30V, I E = 0, T A = 60
C)
= 20V, I E = 0, T A = 60
C)

MPS6533, MPS6534
MPS6535
MPS6533, MPS6534
MPS6535

ICBO
IcBO
ICBO
IcBO

50

00

nA
nA

<A

juA

100

nA

Emitter-Base Reverse Current

(V EB = 3V, I c =

0)

Forward Current Transfer Ratio

(V CE = IV, Ic = 10mA)
(VCE = IV, I c = 10mA)

(V CE =

IV,

c = 100mA)

EBO

MPS6533
MPS6534
MPS6533
1370

hFE

30

IFE

60

thFE

40

120

MPS6533, MPS6534, MPS6535

SYMBOL

Static Characteristics (continued)

Forward Current Transfer Ratio (continued)

- MPS6534
(VCE = IV, I c = 100mA)
- MPS6535
(V CE = IV, I c = 100mA)

thFE
fhFE
thFE
fhFE

- MPS6533
- MPS6534

(VCE = 10V, I c = 500mA)

(V CE = 10V, I c = 500mA)

MIN.

MAX.

90
30
25

270

UNITS

50

Collector-Emitter Saturation Voltage

= 100mA, I B = 10mA)
(I c = 100mA, I B = 10mA)

(I c

- MPS6533, MPS6535
- MPS6534

tVcE(sat)

- MPS, MPS6533, MPS6534

- MPS6535

tVBE (sat)
tVB E(sat)

tVC E(sat)

.5

Volts

.3

Base-Emitter Saturation Voltage

= 100mA,
(I c = 100mA,
(I c

Dynamic

10mA)
I B = 10mA)
I

B =

1.2

Volts
Volts

Characteristics

Collector-Base Capacitance

(V CE = 10V, I E = 0,f =
tPulse width

< 300|Usec.,

MHz)

Duty Cycle

"cb

pF

< 2%.

1371

Silicon

Transistors

The General

MPS6565 and MPS6566

Electric

Planar Epitaxial Passivated

are

MPS6565
MPS6566

Silicon

-J- -03
^

NPN

- 2?

Transistors designed for general purpose amplifier applications.

maximum

absolute

*b

ratings: (T A = 25C unless otherwise specified)

Collector to Emitter

Collector to Base

Emitter to Base
Current
Collector

SEATING PLANE

VCEO
VCBO
Vebo

45
60

Volts

TO-92

Volts

SYMBOL

4.0

Volts

MILLIMETERS
MIN.
MAX.

A
fb

4.3 2

Ic

200

mA

*D

4.4 5

fa

Dissipation

<

TA

Total Power

25 C

PT
PT
PT
PT

> 25C
25C
Derating Factor T c > 25C
TA

Derating Factor

Total Power

<

Tc

350
2.8

mW/C

1.0

Watt

8.0

e
e1

mW

U
L2

mW/C

Operating

+150
-55 to +150
260
-55 to

stg

Lead (1/16" 1/32" from

5.3 3

.4

.4

80

3.1

2.41

.5
.4

5
6 2

5.2

9
2.67
4.1

EMITTER
BASE
COLLECTOR

I.

2.

INCHES

3.

MIN.

MAX.

.17

?I0

.0
.0
.1

6 .0??
6 .0 9
1

NOTES
1.3

75 ?0S

.12 5 .16 5

.09 5

.1

I.I 50
1.395 .045 .0 5 5
3.430 4.32
.13 5 .170

12.700

50

6.3

2.92

Temperature
Storage

-I

r-Qa-

Voltages

.5

1.270

00

.2

50

.1

.05

2.O30 2.670 .080

1,3

3
3
2

.10 5

NOTES:

C
C

1.

THREE LEADS

2.C0NT0UR OF PACKAGE UNCONTROLLED OUTSIDE

THIS SIDE.
3.(THREE LEADS)^b2 APPLIES BETWEEN L AND L
2
^b APPLIES BETWEEN L2 AND I2.70MM (.500")

Case for 10 Sec.)

FROM THE SEATING PLANE. DIAMETER IS UNCONTROLLED IN L, AND BEYOND 12. 70 MM 500")
FROM SEATING PLANE.
(

electrical characteristics: (T = 25C unless otherwise

specified)
A
Static Characteristics

Collector-Emitter
(I c

mA,

SYMBOL

B = 0)

Breakdown Voltage
(I c = 100 mA, I
E =0)
Emitter-Base Breakdown Voltage
(I E = 100M, I
c = 0)
Collector Cutoff Current

(VCB = 30V, I E = 0)
Forward Current Transfer Ratio
(I c = 10 mA, V
CE = 10V)

(I c

= 10

mA,

MAX.

MPS6565
MPS6566

IB

45

Volts

V( B R)CBO

60

Volts

V(BR)EBO

Volts

th FE
th FE

1mA)

UNITS

tV( BR ) CE o

100

IcBO

Collector-Emitter Saturation Voltage

Dynamic

MIN.

Breakdown Voltage

Collector-Base

40

160

100

400

tVCE (s it)

nA

Volts

Characteristics

Collector-Base Capacitance

(VCB = 10V, I E =

0, f

= 100 KHz)

Cob

3.5

pF

Emitter-Base Capacitance

(VBE = .5V, I c = 0, f = 100 KHz)

Magnitude of Forward Current Transfer Ratio
(I c = 10 mA, V
CE = 10V, f = 100 MHz)

Cib

3.7 Typ.

pF

hfe

hoe

60
500

Ohms

Typical {2.5

X10- 4

Hybrid Parameters
(I c

= 10 mA,

VCE

= 10V,

KHz)

hie

hre

Noise Figure
(I c

100M, VCE

f= 10 Hz
t Pulse width

to 15.7

< 300 ms,

= 5V,

IK Ohms,

NF

KHz)

duty cycle

<2%.
1372

jumhos

dB

MPS6565, MPS6566

1000

1000

MPS6566
MPS6565

"n
o

TA.IZ5' C.Vct'lV

<

w
z

-..

r*. 25* C, V -IV

IN
M-HI
I

ijjj

"J" ....

TA- -55*C, v

or
UJ

^*

..

f!-2yC,VeflV

"1"1 inn
TA.25"C,V.5V_

DC

..

rA-l25 # C,Vc ,>IV

ism

...

""

ff

'

01

111
1

<

Z
111

f
U

...

K>

*
o

u.
I
1

.....
10

.1

Ic

100

10

COLLECTOR CURRENT -

COLLECTOR CURRENT -mA

FORWARD CURRENT TRANSFER RATIO

VS. COLLECTOR CURRENT

FORWARD CURRENT TRANSFER RATIO

VS. COLLECTOR CURRENT
1.4

TT
1

1.6

>

1.2

mi

tf
t[

10

>

it

ll

<

o
5

.MPS6565
MPS6566

III
III

UJ

TA.25"C

ImA

llc-IOmA

lcB

I c .|00mA

30m A

""it

*
I

1
J,

s
d

501

I c - COLLECTOR CURRENT

31

COLLECTOR CURRENT

mi MPS6565
I

Ic

i.x

20

COLLECTOR EMITTER SATURATION VOLTAGE

VS. BASE CURRENT

BASE EMITTER SATURATION VOLTAGE

VS.

I,- BASE CURRENT -mA

-mA

id iXIO

10

MPS65 66

+ ii 5"C^

+12

+I25"C

^^+125 C

^P"
-5S*C -

rnr

I'C

"

-55-

I
.

- COLLECTOR CURRENT -

Ic -COLLECTOR CURRENT -mA

mA

COLLECTOR EMITTER SATURATION VOLTAGE

VS. COLLECTOR CURRENT

COLLECTOR EMITTER SATURATION VOLTAGE

VS. COLLECTOR CURRENT
1373

POWER-TAB
TRIAC

SC116

Bi-Directional Triode Thyristor

8 RMS Up

The triac is a silicon AC switch which may be gate

from either polarity of applied voltage. The SCI 16 is
sulated Triac.

It

incorporates General Electric's

triggered

600 Volts

to

from an Off -State to an On-State

POWER-TABTM Molded Silicone Encappatented POWER GLASTM process that improves

a

upon normal passivation techniques. It provides an intimate bond between the silicon
chip and
the glass coating. The resulting stable, low-level leakage current provides
excellent performance
and demonstrated reliability.

FEATURES:

100 Ampere Peak, one cycle surge rating with the economy of a TO-202 package.

POWER GLASTM

Very low Off-State (leakage) current at room and elevated temperatures.

Inherent immunity from non-repetitive transient voltage damage (maximum

passivated silicon chip for

maximum

JEDECTO-202AB

reliability.

critical rate-of-

of On-State current subsequent to voltage breakdown triggering, di/dt = 10 A//xsec).

Low On-State Voltage at high current level.

Excellent surge current capability.

Special selection for non-standard gate requirements available

Rugged, industry-proven

Various lead forming configurations available upon request.

rise

POWER-TABTM

upon

request.

packaging.

MAXIMUM ALLOWABLE RATINGS

RMS ON-STATE
CURRENT,
TYPE

't(rms)

(1)

AMPERES
SCI 16

PEAK0NE FULL CYCLE

SURGE (NON-REP)
ON-STATE CURRENT

REPETITIVE PEAK
OFF-STATE VOLTAGE,

Vdrm (2)

tsm amperes

50 Hz

60 Hz

(RMS AMPERE) 2
SECONDS,1.0

VOLTS

D
VOLTS

VOLTS

VOLTS

AMPERES

AMPERES

MILLISECOND

(RMS AMPERE) 3
SECONDS.8.3
MILLISECONDS

200

400

500

600

90

100

20

42

Peak Gate Power Dissipation, P GM (4)

Average Gate Power Dissipation, P G(A v)
Storage Temperature,

2
t FOR FUSING
FOR TIMES AT <3>

10 Watts for 1Q Microseconds

5

Tstg

Operating Temperature, Tj

-40C to +100C

NOTES:
1.

2.

X
4.

Watts

.-40C to +150

At case temperature reference point temperature of 35 C maximum

and 360 C conduction.
Ratings apply for zero gate voltage only. Ratings apply for either
polarity of main terminal 2 voltage referenced to main terminal
Ratings apply for either polarity of main terminal 2 referenced
to main terminal 1.
Ratings apply for either polarity of gate terminal referenced to
main
terminal

1374

1.

SC116

CHARACTERISTICS
TEST
Repetitive Peak OffState Current

SYMBOL

MIN.

TYP.

mA

Idrm

Peak On-State Voltage

VTM

Critical Rate-of-Rise of

dv/dt

50

150

0.1

0.5

Volts

1.63

Volts//xsec

Off- State Voltage (Higher values may cause device switching.)

Critical Rate-of-Rise of

dv/dt (c )

Volts/jusec

dv/dt)

Gate Trigger Current

= Max Allowable Repetitive

Peak Off-State Voltage Rating
Gate Open Circuited.
T c = + 25"C

Vdrm

Gate Trigger Voltage

mAdc

!gt

T c = +100C
T c = +25C, I T m = ! msec. Wide pulse,
duty cycle < 2%. I TM = 1 1 -5 A peak.
T c = +100C, Rated VDRM Gate
Open Circuited. Exponential Voltage
-

35" C, I T (rms) = Rated Max

Allowable RMS On-State Current
Vdrm = Max. Rated Peak Off-State
Voltage. Gate Open Circuited.
Commutating di/dt = 4.3 A/msec.

Tc =

VD

50

MT2+

_
_
_

_
_

so

MT2- Gate-

80
80

MT2+ GateMT2+ Gate+

80

MT2- Gate-

Rl

Ohms
100 Ohms
50 Ohms
50 Ohms
50 Ohms
25 Ohms

MT2+ Gate-

130

Vdc

VGT

_
Voltage
DC Holding Current

VD

VG d

0.20

2.5
3.5
3.5
3.5

mAdc

Ih

+25C

-40C

Rl

Ohms
100 Ohms
50 Ohms
50 Ohms
50 Ohms
25 Ohms

Tc

100

MT2- GateMT2+ GateMT2+ Gate+

MT2- GateMT2+ Gate-

2.5

Tc

= 12 Vdc

MT2+ Gate+

2.5

100

Gate+

TRIGGER MODE

Gate Non-Trigger

= 12 Vdc

DC

TRIGGER MODE

DC

HOlk

Waveform.

Commutating Off-State
Voltage (Commutating

DC

TEST CONDITIONS

UNITS

MAX.

All Trigger

1000

Modes

Ohms

+25C

-40 C

+100C

Main Terminal Source Voltage = 24

Vdc, Peak initiating on-state current =

2,3

0.5 A, 0.1 milliseconds to 10 milliseconds wide pulse. Gate trigger source =

7 Volts,

DC

Latching Current

20 Ohms

T c = +25C

50

T c = -40C

100

mAdc

II

Main Terminal Source Voltage - 24

Vdc, Gate trigger source = 15 volts,
100 Ohms, 50 /xsec pulse width, 5 Msec
rise and fall times max.

TRIGGER MODE

Apparent Thermal

Rqjc

MT2+ Gate-tMT2- GateMT2+ GateMT2+ Gate+

100

100

200

200

MT2MT2+

200
400
6.2

"C/Watt

Gate-

Resistance
1.
2.
3.

4.

to main terminal
Values apply for either polarity of main terminal 2 characteristics referenced
terminal.
and
gate
terminal
for
main
2
terminal
reference
Main terminal 1 is the

With Vd equal to maximum allowable off-state voltage.

Apparent thermal resistance applies for a 50 or 60 Hz full

sine

wave of current. 1375

1.

Tc

+25"C

-40C

Gate-

Junction-to-Case

NOTES:

SC1 16
ioo

uu
80
60
4n
?0
10

K
3
O

8
6
4

JUNCTION

^JUNCTION

tMKtKATURE=ZS w C

^/note
1//

.2

100

V\

CE

VOLTAGE
CURRENT

OIM-STATE

60 Hz

80

3.

CURRENT WAVEFORM

IS

SINUSOIDAL,

50 OR 6

70

NOTES:

??

50

kJ

<

2.2 2.4 2.6 2.8

50HzX.

j- 1UU'

CONDUC TION ANGLE =3 SO

.?

7
CE

S^

NOTES:
1.

CO

1.8

1.6

90

10

1.4

1.2

VS. OIM-STATE

II

MAXIMUM

2.

12

If

INSTANTANEOUS ON- STATE VOLTAGE -VOLTS

11-

MAXIMUM RMS ON-STATE CURRENT

MAXIMUM ALLOWABLE CASE TEMPERATURE

,l

RMS ON-STATE CURRENT, I T(HMS) -AMPERES

DUTY

pr

.4

z
<
m

2%

F=2. CU RVESAPF'LYFOR EITHER-

.6

l-

It M'1 MSB 3. PULSE,

1 ~t
cv CLE

4
3
2

GATE ^ONTROl uitvocmcnr ^^^.

DURING AND IMMEDIATELY FOLLOWING
THE SURGE CURRENT INTERVAL.
CUR
RENT OVER LOAD MAY NOT BE REPE/ TED
2.
UNTIL JUNCTION TEMPERATURE HAS F ETUR NEC
TO WITHIN STEADY-STATE RATED VALiJE.
1.

40

3
1

<

3.

RMS ON -STATE CURRENT,

30

I T (RMS) -AMPERES

5 6 7 8 9 10

NUMBER

MAXIMUM AVERAGE POWER DISSIPATION

VS. RMS ON-STATE CURRENT

4.

30 10 5060 80

20

100

OF FULL CYCLES

MAXIMUM ALLOWABLE FULL CYCLE

SURGE CURRENT FOLLOWING RATED
LOAD CONDITIONS

OUTLINE DRAWING

PART NUMBER DESIGNATION

SC116
B
1

STANDARD TYPE - JEDEC T0-202AB

.127

N- T2T

POWER -TABTRIAC
8A RMS NON -ISOLATED

CASE TEMP.

REF.

V0LTA8E
B" 200 VOLTS

|LEA
LEAD F0RMIN9 C0NFI8URATI0NS
-STANDARD TYPE
1

D=400 VOLTS

500 VOLTS
M=600 VOLTS

ll= Typ.ll

Typ 2

I2 = TPIZ

# = OTHER VARIATIONS
LEAD FORMING CONFIGURTIONS

X4B CHAMFER

(7) tab electricaly common to mt2

I.2S0

090
.030

~REF. K.03

(&) other lead forming

configurations available

100

I
1376

TYPE 2

TYPE

TYPE

Triac

SC136

Bi-Directional Triode Thyristor

Up to 400 Volts

3A RMS

triggered from blocking to a

General Electric's Triac is a bi-directional triode thyristor which may be gate
most of the functions of
perform
will
device
This
voltage.
applied
of
polarity
either
conducting state for
parallel.
inverse
in
connected
two SCR's (silicon controlled rectifiers)

AC switching and control

The GE SCI 36 series Triac is designed for 120 and 240 volt, 50 and 60 Hz
static switching. The device
applications such as lamp dimming, motor speed and temperature controlling, and
combination of tungsten lamp loads totaling 150 watts
is able to withstand the inrush surge of any parallel
line.
240-volt
on
watts
a
line
or
300
120-volt
on a
breakover voltage
An important feature of the SCI 36 is its ability to switch into the conducting state should a
voltage damage which generally
in either polarity be exceeded, thus providing inherent immunity from transient
eliminates the need for auxiliary protective devices.

Features:

Inherent immunity from transient

voltage damage (can be broken over

safely

in either

Blue Silicone
Leads Can Be Formed
To A TO-5 Pin Configuration

direction)

Improved commutating dv/dt (5V//is min)

No maximum torque

limit

on mounting screw

Narrow leads greatly simplifies customer assembly

Four standard lead forming configurations

available

from factory (including TO-5 compatability)

Special selections for non-standard gate requirements available

upon request

TYPICAL TRIAC APPLICATIONS

GENERAL FUNCTIONS

TYPES OF EQUIPMENT
Photographic Dev. Equip
Process Control

Reproduction Equipment

Heat
Control

X
X
X

Blenders, Mixers

Computer Tape Decks

Fans

Hand Tools
Machine Tools/Misc. Mfg.
Sewing Machines

Solid State

Motor
Speed

Light

Control

Control

X
X
X
X
X
X
X
X
X

X
X
X

X
X
X
X

Photographic Equipment

Outdoor Signs
Clutches/Brakes
Industrial Timers

Vending Machines

X
X

Entertainment

1377

X
X
X
X
X
X
X

Computer Power Supplies

Home

Power
Regulation

Laundry

Farm Equipment
Light Dimmers

Contractors
and Relays

I
X
X

SCI 36

MAXIMUM ALLOWABLE RATINGS

RMS On-State

Repetitive Peak

Current
360 Conduction, T TAB = 65C

Off-State Voltage

Peak One Full Cycle Surge

(IMon-rep) On-State Current

T (RMS)

Tj = -40oc to +
110C
V DRM Notes 1, 2

Amperes

Volts

Amps

SC136B

3.0

200

30

SC136D

3.0

400

30

TYPE

Critical Rate-Of-Rise of

T:

= -40C to + 110C

TSM

On-State Current, di/dt: (2) (4)

Breakover voltage triggered operation

Peak Gate Power Dissipation, P

5 A/ S

.......'.'..'.

GM (3)

"

Average Gate Power Dissipation, P

G(AV) (3)
Storage Temperature, T
stg

Watts

Ql
"

Wam

_ 4()oc tQ +
_ 4Q o c to+110 o c

Operating Temperature, T,

NOTES:
1.

2.
3.
4.

Ratings apply for zero gate voltage only.

Ratings apply for either polarity of main terminal 2 referenced
to main terminal 1.
Ratings apply for either polarity of gate terminal referenced to main
terminal 1.
di/dt rating is established in accordance with EIA Standard
RS397, Recommended Standards for Thyristors, Section 5.2.2.6.

_N0 TES>

UNCT ION

(11 J
(2)

EMP FRftT

IRF

HO* C

INUSOIDAL CURRENT WAVEFOP M,

OR 60 Hz, 360 CONDUCTtC N

A*.

GLE

2.0

1-2

2.0

1.6

2.4

0.8

RMS ON STATE CURRENT-AMPERES

FIGURE

1.2

2.0

1.6

2.4

RMS ON-STATE CURRENT-AMPERES

1:

FIGURE

MAXIMUM ALLOWABLE TEMPERATURES

VS. RMS ON-STATE CURRENT

2:

MAXIMUM AVERAGE POWER DISSIPATION

VS. RMS ON-STATE CURRENT
1378

SCI 36

CHARACTERISTICS

Heterence

Symbol

Test

Peak Off-State

Min.

Typ.

Max.

MA

drm

Note

Test Conditions

Units
=

V DRM

Maximum

Allowable Peak

1, 5

Off-State Voltage

Current

Gate Open Circuited

Vtm

Peak On-State

T L =+25C

10

Tl=+H0C

500
1.8

Volts

Critical

Rate of Rise of

Tj_= +25C,

Ixm = 5A

peak,

msec

1,

Wide pulse, duty cycle ^ 2%

Voltage

10

dv/dt

Volts/jlisec

T L = +1 10C, Rated V DRM

1, 5

Off-State Voltage

(Higher values

may

Gate Open Circuited,

Exponential Waveform

cause

device switching)
Critical

dv/dt (c

Rate of Rise of

Commutating

Volts/Msec

T L = +65C, T (RMS)

= 3.0

Voltage

Peak Off-State Voltage.

(Commutating dv/dt)

Gate Open Circuited

Commutating

DC

mAdc

'GT

Gate Trigger

Current

DC

RL=

25

MT2+ Gate+

25

MT2- Gate-

25

MT2+ Gate-

50

MT2+

50

MT2- Gate-

50

MT2+ Gate-

2.0

MT2+ Gate+

2.0

MT2- Gate-

2.0

MT2+Gate-

3.0

MT2+ Gate+

3.0

MT2- Gate-

3.0

MT2+

Vdc

1.6A/msec

di/dt =

vD

Mode

V GT

Gate Trigger

1,

50 ohms

Trigger

Voltage

= Rated Max. Allowable

V DRM

Off-State

TL

2, 4, 5

6V dc

+25C

12V dc

-40C

Gate +

vD

Mode

Trigger

Rl

TL
2,

Vdc 50 ohms +25C

12 Vdc 50 ohms

-40C

Gate -

MT2+ Gate+

MT2- Gate0.20

MT2+ Gate-

MT2-

DC

DC

Holding Current

mAdc

Ih

50

Tl= +25C, Gate

trigger source =

100

T L = -40C, Gate

trigger source =

R0J-TAB
R0JL

NOTES:

2.
3.

Mode

Trigger Source

50

MT2+ Gate+

5V, 50ft

50

MT2- Gate-

5V,

100

MT2+ Gate-

5V, 50fi

100

MT2+ Gate+

10V, 5 on

100

10V, 50S2

200

MT2- GateMT2+ Gate-

:
-

100

10

C/Watt

35

1,5

5V, 50fl

10V,50n

Main Terminal Source Voltage = 24 Vdc,

Gate trigger pulse width = 1 00 Msec

75

+110C

Gate+

mAdc

e J A
R6 J A

Resistance

VDRM

Main Terminal Source Voltage = 24 Vdc,

Peak initiating on-state current = 0. 1
0.1 milliseconds to 10 milliseconds wide
pulse, Gate trigger pulse width = 100 Msec

Trigger

Steady-State Thermal

1000

ohms

IL

Latching Current

Rated

50Q

2, 5

TL

+25C

-40C

10V, 5 0f2

Junction to Ambient, tab types 1, 11, 12

Junction to Ambient, no tab types 2, 21
Junction to tab, types 1, 11, 12
Junction to MT2 lead, no tab types

2,

3,

21

Values apply for either polarity of main terminal 2 characteristics referenced to main terminal 1
terminal.
1 is the reference terminal for main terminal 2 and gate
which states,
Junction to case values tested in accordance with JEDEC Semiconductor device registration #JC-22 (RDF-2), VA, Note 6,
are to be the limiting
"Thermal characteristics are to be measured with the device operating in only one direction. The values registered
in a socket (unsoldered) and natural convection. See
value for either direction." The junction to ambient value is with the device inserted

Main terminal

4.

outline drawing for tab and lead temperature measurement points.

Special selections for non-standard gate requirements available upon request.

5.

The

Type
is measured in the center of the tab, 1/16 inch from the body on
1/18 inch from the body on Type 2 and 21 devices.

lead temperature (T L )

center of the

MT

lead,

1,

11 and 12 devices, and in

the^yg

40

?0

NOTE
R

PRIOR TO SURGE'-40"C TO +110"

(2)

GATE CONTROL MAY BE LOST DURING AND IMM E DAT ELY

FOLLOWING THE SURGE CURRENT INTERVAL
CURRENT OVERLOAD MAY NOT BE REPEATED UNTIL
JUNCTION TEMPERATURE HAS RETURNED TO WITHIN
1

(31

2.0

1-5

2.5

3.0

FIGURE

3:

3.5

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

10

40

20

NUMBER OF FULL CYCLES AT 60

Hi

FIGURE 4: MAXIMUM ALLOWABLE FULL

CYCLE SURGE CURRENT FOLLOWING
RATED LOAD CONDITIONS

MAXIMUM ON-STATE CHARACTERISTICS

OUTLINE DRAWINGS

OTHER TRIAC AND APPLICATION INFORMATION AVAILABLE FROM GENERAL ELECTRIC

Publication

Publication

Number

Number
Specification Sheets

175.13

175.14

SCI 36
SC1 42

(3
(8

Amp in plastic package)

Amp in plastic package

with isolated tab)

175.15
175.16
175.17
175.18
175.29
175.30
175.32

SC141/146
SC240/241
SC245/246
SC250/251
SC260/261

ST2
ST4

(6,

10

Amp in plastic

package)

Amp)
(10 Amp)
(15 Amp)
(25 Amp)
(6

(Diac)

200.35

Application Notes
Using the Triac for Control of

200.51

Better

Room

AC Power

Conditioning Via Solid State Controls

200.53

Solid State Incandescent Lighting Controls

200.61

A Zero

200.70

Low

Resistance Sensor-Zero Voltage

Switching Temperature Control

201.12

500 Watt

201.19

RF

200.55

Handling and Thermal Considerations for General

Electric Plastic Power Devices

201.24

Thyristor Selection for Incandescent

(Asymmetrical A.C. Switch)

All

AC

Line Voltage and Power Regulator

Filter Considerations for Triac

Schenectady,

Electric

& SCR Circuits

Lamp Loads

may be ordered by publication number

Company, Distribution Services, Bldg. 6-208,

of these referred to

from General

1380

Voltage Switching Temperature Control

New York

2305.

Bi-Directional TriodeThyristor

Ptower Pac Triacs

triac is a solid state silicon

AC

switch which

may be

and Non-Isolated Tab

gate triggered

NON-^

from an

OFF-State to an ON-State for either polarity of applied voltage.

POWER PAC

triacs are

molded

silicone encapsulated devices

porate General Electric's patented

POWER GLAS

SC140
SC142
SC147

Up to 600 tolts

6A to 15A RMS
Isolated

ISOLATED TAB

ISOLATED TAB
SC141
SC143

which incor-

glassivation process.

This process provides an intimate bond between the silicon chip and the glass
coating, significantly improving device performance and reliability. The copper mounting surface on the isolated tab types is electrically insulated from
the silicon chip and the three electrical terminal leads.

SC146
SC149
SC151

FEATURES:

maximum

POWER-GLAS

Very low off-state (leakage) current at

Inherent immunity from non-repetitive transient voltage damage (max.

passivated silicon chip for

critical rate-of-rise

room and

reliability.

elevated temperatures.

of on-state current subsequent to voltage breakover

= 10 A//usec).

triggering, di/dt

Low

Excellent surge current capability.

1600 volts RMS Surge Isolation Voltage on Isolated Triacs.

Selected types available from factory for use where circuit requires

on-state voltage at high current levels.

operation:

with popular zero voltage triggering IC's

400 Hz

at

with low gate trigger current

at higher voltage levels

commutating dv/dt

at higher

levels

POWER PAC PACKAGE

JEDEC TO-220AB

Meets

Round

leads

specifications.

Rugged, industry-proven packaging.

greatly simplifies assembly.

Six standard lead forming configurations available

(including TO-66 compatibility.)

Molded
Silicone

from factory

Encapsulation

Tab Coin
Power Glas
Pellet

MT1

Plastic

Lock

MT2
ISOLATED (RED)

NON-ISOLATED (BLUE)

1381

PICTORIAL ASSEMBLY

ISOLATED TAB
SCI 40,

2,

NON-ISOLATED TAB

SC141,

3, 6, 9,

SC151

MAXIMUM ALLOWABLE RATINGS

RMS ON-STATE
CURRENT,
TYPE

REPETITIVE PEAK
OFF-STATE VOLTAGE,

't(RMS) (1)

AMPERES

PEAK ONE FULL CYCLE

SURGE (NON-REP) ON-STATE
CURRENT, TSM AMPERES

Vdrm <2)
B

2
t FOR FUSING
FOR TIMES ATI3)
l

(RMS AMPERE) 2

(RMS AMPERE) 2
SECONDS, 8.3
MILLISECONDS

50 Hz

60 Hz

VOLTS

D
VOLTS

VOLTS

VOLTS

AMPERES

AMPERES

MILLISECOND

200
200
200

400
400
400

500

600
600
600

74
104
104

80
110
110

18

26.5

500
500

20
20

50
50

200
200
200
200
200

400
400
400
400
400

500
500
500
500
500

600
600
600
600
600

26.5

SECONDS

1.0

ISOLATED TAB
SCI 40
SCI 42
SCI 47

6.5

10

NON-ISOLATED TAB
SC141
SCI 43
SCI 46
SCI 49
SC151

6
8

10
12

15

74

80

18

110

120

20

60

110

120

110
110

120
120

20
20
20

60
60
60

Peak Gate Power Dissipation, P GM (4)

10 Watts for 10 Microseconds (See Chart 4)

5 Watts

Average Gate Power Dissipation, P G A v)

(
Peak Gate Current, I GM (4)

Peak Gate Voltage,

VGM

Storage Temperature,

See Chart 4

(4)

See Chart 4

Tstg

-40 C to

Operating Temperature, Tj

-40 C to

Surge Isolation Voltage (5)

+125C
+100 C

1600 Volts

RMS

MAIN
TERMINAL

02
ON -STATE

MT2 +
QUADRANT

OFF
STATE

3*0

MT2 QUADRANT

E ^>FF

^ STATE
MAIN
TERMINAL

ON-STATE
TYPICAL CHARACTERISTICS
VOLT- AMPERES

TERMINAL ARRANGEMENT

NOTES:
1.

reference point (see outline drawing) temperature of 80C maximum

'iS.ffand SCI
49) and 360 conduction.

lor SCI 42

(except

75C maximum

Ratings apply for zero gate voltage only. Ratings apply for either
polarity of main terminal 2 voltage referenced to main
terminal 1
3. Ratings apply for either polarity of main terminal 2 referenced
to main terminal 1.
4. Ratings apply for either polarity of gate terminal
referenced to main terminal 1.
5. Isolated tab triacs only. Rating applies from main
terminals 1 and 2 and gate terminal to device mounting surface. Test voltage is
50 or 60 Hz
sinusoidal wave form applied for one minute. Rating applies over
the entire device operating temperature range
2

1382

NON-ISOLATED TAB

ISOLATED TAB
SC140,

2,

SC141,

3, 6, 9,

SC151

CHARACTERISTICS
TEST
Repetitive Peak Off-

SYMBOL

MIN.

TYP.

MAX.

mA

Idrm

v drm

Maximum

tive Off-State

State Current

REF.

TEST CONDITIONS

UNITS

Allowable Repeti-

NOTE
1

Voltage Rating

Gate Open Circuited

Peak On-State
Voltage

0.5

Volts

SCI 42
SCI 43

SC146
SCI 47
SCI 49
SCI 51

Itm = 8.5
Itm = 11.5
Itm = 11.5

1.75

1.55

1.50

Itm = 14
Itm = 1 4

1.65

1.52

Itm = 21

1.65

100

SC142, SC143

150

SC146.SC147

100

150

100

200

100

250

SCI 49

SC151
dv/dt (c)

Volts/^usec

mAdc

Igt

Current

50
50
50

80
80
80

V GT

Vdc

Voltage

DC Gate

Non-Trigger

17

Peak

Peak
Peak
Peak
Peak
Peak
Peak
Peak

T c = +100C, Rated VDRM

Gate Open Circuited

of Commutating
Off-State Voltage
(Commutating dv/dt)

Gate Trigger

TM =

A
A
A
A
A
A
A
A

msec, Wide

< 2%

Exponential Voltage Waveform

50

DC

9.2

1.83

Volts//isec

30

Gate Trigger

TM =

Duty Cycle

1.85

dv/dt

SC140, SC141

DC

T c = +25C, I TM =
Pulse,

SC141

Critical Rate-of-Rise

Tc = +25C
Tc = +100C

0.1

VTM

SCI 40

Critical Rate-of-Rise
of Off-State Voltage
(Higher values may
cause device
switching)

VGD

0.2

2.5
2.5
2.5

3.5
3.5
3.5

Vdc

Voltage

1383

It(RMS) = Rated Maximum Allowable RMS On-State Current, V DRM

= Maximum Rated Peak Off-State
Voltage, Gate Open Circuited.

V D = 12 Vdc
TRIGGER MODE
MT2+ Gate +
MT2- Gate MT2+ Gate MT2+ Gate +
MT2- Gate MT2+ Gate V D = 12 Vdc
TRIGGER MODE
MT2+ Gate +
MT2- Gate MT2+ Gate MT2+ Gate +
MT2- Gate MT2+ Gate TRIGGER MODE
MT2+ Gate +
MT2- Gate MT2+ Gate MT2- Gate +

1,4

Rl

Ohms
Ohms
50 Ohms
50 Ohms
50 Ohms
25 Ohms

TC

100
100

+25C

-40C

Rl
100

100
50
50
50
25

Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
Rl

1000

Ohms

Tc

+25C

-40C

TC

+100C

2, 3

ISOLATED TAB
SC140,

2,

TEST

DC

NONISOLATED TAB
SC141,

3, 6, 9,

SC151

MIN.

TYP.

SYMBOL

Holding Current

CHARACTERISTICS
MAX.

Ih

UNITS

TEST CONDITIONS

mAdc

Main Terminal Source Voltage = 24 Vdc

Peak Initiating On-State Current =0.5 A,

(Continued)

NOTE

REF.

0.1 milliseconds to 10 milliseconds

DC

Latching
Current

wide pulse, Gate Trigger Source = 7V,

20 Ohms.
T c = +25C

50
100

Tc =

mAdc

II

Main Terminal Source Voltage = 24 Vdc

Gate Trigger Source = 1 5 V, 1 00 Ohms,
50^isec pulse width, 5 jusec rise and fall
times

Steady State

Thermal Resistance
Steady State

R0JA

MT2 MT2 +
MT2 +
MT2 MT2 +

100
200

200
200

400

R0jc

_
_

_
_

SCI 40

SC141
SCI 42
SCI 43
SCI 46

SC147
SCI 49

SC151
Apparent
Thermal Resistance

_
_

SCI 49

SCI 51

SC141
SCI 42
SCI 43

SC146
SC147

_
_
_
-

+25C

Gate +

Gate
Gate

-40C

Junction-to- Ambient

C/Watt

Junction-to-Case
This characteristic is useful as an
acceptance test at an incoming inspection station.

C/Watt

Junction-to-Case
This characteristic is useful in the
calculation of junction temperature
rise above case temperature for AC
current conduction.

3.1

3.0

1, 5

1,

3.3

3.2
2.2
2.5

2.0
2.0

RfljCXac)

SC140

Gate
Gate

Tc

C/Watt

Thermal Resistance

maximum

TRIGGER MODE
MT2 + Gate +

100

75

-40 C

2.04
2.22

2.31

1.97
1.50

1.69
1.52

1.10

1.

2.

3.

4.

Characteristic values apply for either polarity of main terminal 2

referenced to main terminal 1.
Main terminal 1 is the reference terminal for main terminal 2 and
gate terminal.
With V D equal to maximum allowable off-state voltage.
Values for these test conditions are:

Device

SC140
SC141
SC142
SC143

SCI 46 /SCI 47

SC149
SC151
5.

Commutating

di/dt

A/msec
A/msec
A/msec
4.3 A/ msec
5.4 A/msec
6.4 A/msec
8.1 A/msec
3.5
3.2
4.3

6.

Junction-to-case steady-state thermal resistance (R0

JC ) is tested in
EIA-NEMA Standard RS-397, Section 3.3.2, which
states: "Thermal characteristics are to be measured with the device
operating in only one direction. " The values listed are the limiting
value for either direction. For non-isolated devices, the MT2 lead
temperature reference point is approximately equal to the case temperature reference point (see outline drawing).
Apparent thermal resistance applies for a 50 oi 60 Hz full sine wave
of current. It can be calculated with the following formula:

accordance with

TC

7.

+80C
+80C
+75C
+80C
+80C
+75C
+80C

Apparent thermal resistance =

TJ(max) - T C
P T(AV)

where:

Tj( max ) =

Tc
P T(AV)

The junction- to-ambient value is under worst case conditions; i.e.,

with No. 22 copper wire used for electrical contact to the terminals

See Reference Chart 12.

and natural convection cooling.

1384

maximum

junction temperature
= case temperature
= average on-state

power

ISOLATED TAB
SC140,

2,

NON-ISOLATED TAB
SC141,

3, 6, 9,

SCI 51

100

23456789
RMS ON-STATE CURRENT

I T (RMS)

RMS ON-STATE CURRENT,

"AMPERES

I T (RMS)

"AMPERES

SC142/SC143

SC140/SC141
100

i>ioo

p
z>
!5
a.

UJ

SCI46
SCI47

Lli

<
O
Ul

I
80'

T
I

<
2
z

X
2

RMS ON-STATE CURRENT, I T(RMS)

RMS ON-STATE CURRENT, I T(RMS) -AMPERES

AMPERES

SC149

SCI 46 /SCI 47
I00

UJ

95

i-

<

90

U
a
2

NOTES:

85

1.

SCISI

75

2
2
X
l
2

70

RMS ON-STATE CURRENT,

10

IT

II

)"
( RMS

12

13

Rating curves apply for 50 or 60 Hz sine wave operation.

Conduction angle = 360.

14

AMPERES

SC151
1.

shown on outline

3.

JT

T_

is

2.

si

Case temperature measurement point

drawings.

MAXIMUM CURRENT RATINGS

1385

ISOLATED TAB
SCI 40,

2,

NON-ISOLATED TAB
SC141,

SC151

3, 6, 9,

100

[y^5

50

20
10

tr

r>

5.0

z
o
o
o

z
o

2.0

1.0

t.2

t=-

-1-

25C

~\_

+ IOOC J

JUNCTION

TEMPERATURE
1

0.6

I.O

I.4

1.

2.2

2.6

INSTANTANEOUS ON -STATE VOLTAGE

3.0
-

3.4

3.8

.5

VOLTS

SC140/SC141

SC142
100

UJ

-^^*

</>
1

00

50

Q.

7
<

2.5

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

zoo

(0

1.5

1*
<?f

UJ
a.

50

**

^J -~~

t-

sVO
1-

UJ

20

UJ

10

cc

10

UJ

5.0

5.0

2.0

3
o
UJ

**

2.0

\ \-+ ICO'C

J~

JUNCTION TEMPERATURE
1.0

I.O

0.5

f
z

0.5

0.2

0.5

/ I

ITT

0.1
I.O

1.

2.0

2.5

3.5

3.0

INSTANTANEOUS ON -STATE VOLTAGE

4.0

4.5

5.0

.5

~i

1.0

1.5

2.0

INSTANTANEOUS ON -STATE VOLTAGE

VOLTS

SC143/SC146/SC149
1

?sc

0.2

2.5
-

3.0

VOLTS

SC147

00

NOTES:
1

2.

I.O

I.5

'TM = 1 msec, pulse, duty cycle 2%.

Curves apply for either polarity of main terminal 2
enced to main terminal 1.

2.5

2.0

INSTANTANEOUS ON - STATE VOLTAGE

VOLTS

SC151

2.

MAXIMUM ON-STATE CHARACTERISTICS

1386

refer-

ISOLATED TAB
SC140,

2,

NON-ISOLATED TAB
SC141,

SC151

3, 6, 9,

a
in
S

I
2

RMS ON -STATE CURRENT, I T(RMS

7
)

"

10

23458789

RMS ON - STATE CURRENT

AMPERES

IT

10

- AMPERES

RMS )

SC142

SC140/SC141
P

12

RMS LIMIT"!,

SCI47

-"Tl
/

10

</>

I
p

<
4

RMS ON-STATE CURRENT,

8
I T ( RMS )

_
5
4
RMS ON -STATE CURRENT, I T ( RM s)

10

-AMPERES

"

10

AMPERES

SCI 47

SC143/SC146/SC149

NOTES:

10

RMS ON -STATE CURRENT,

14

12

IT

RMS

16
)

1.

Tj = 100C.

2.

Conduction angle = 360.

3.

Current waveform

sinusoidal,

50 or 60 Hz.

18

AMPERES

SCI 51

3.

is

MAXIMUM POWER
1387

DISSIPATION

ISOLATED TAB
SC140,

2,

NON-ISOLATED TAB
SC141,

3, 6, 9,

SC151

O
>

2.5

2.0

O
>

I.5

NOTE:
I. APPLIES FOR ALL THREE

GUARANTEED TRIGGER
MODES.

0.5

|.o

2.0

|.5

INSTANTANEOUS GATE
4.

-20

2.5

HO

CURRENT -AMPERES

GATE CHARACTERISTICS AND RATINGS

5.

10
20
CASE TEMPERATURE, TC -*C

3CT

MAXIMUM DC GATE VOLTAGE TO TRIGGER

VERSUS CASE TEMPERATURE

<
-i
a!

*
l

NOTE
I

APPLIES FOR ALL THREE

GUARANTEED TRIGGER

MOOES

a
-10

10

20

CASE TEMPERATURE

6.

MAXIMUM DC GATE CURRENT TO TRIGGER

7.

VERSUS CASE TEMPERATURE

7
9
10
II
12
13
GATE PULSE WIDTH -MICROSECONDS

MAXIMUM GATE CURRENT TO TRIGGER

VERSUS GATE PULSE WIDTH

1388

NON-ISOLATED TAB

ISOLATED TAB
SCI 40,

2,

SC141,

3, 6, 9,

SC151

100

K o
-,

X
t

70

M
NOTES
60

1.

SV

"

'

CURVE APPLIES FOR

EITHER POLARITY OF MAIN

TERMINAL 2 REFERENCED TO
MAIN TERMINAL 1.

5 50
2.

PEAK INITIATING ON-STATE CURRENT

EQUALS 0.5 AMPERES.

40
30
-40

-30

-20

20

-10

CASE TEMPERATURE
8.

30

MAXIMUM DC HOLDING CURRENT

VERSUS CASE TEMPERATURE

9.

90

50

20

10

TYPICAL COMMUTATING dv/di

I00

VOLTS/MICROSECOND

NORMALIZED DEVICE RATED COMMUTATING

DI/DT VERSUS COMMUTATING DV/DT

20

MO

VW)HZ

80

2
<

70

50HzN^\
90

50 H^

80

50
60

a 30

I0

20

40

20

60 80 I00

10

20

100

NUMBER OF FULL CYCLES

NUMBER OF FULL CYCLES

SC1 43 / SC1 46 / SC1 49 / SC1 51

SC140/SC141
no

^OHl
(

100

It!

90

50Hi*\

2 80
IT
K
3
.'.

NOTES:
1.

70

Gate control may be

lost

during and immedi-

ately following the surge current interval.

2.

Current surge

may

not be repeated until junc-

tion temperature has returned to within steady-

60

<

state rated value.

3.

50

40

8 10

20

40

60 80

Junction temperature immediately

surge = 40C to 100C.

prior

to

100

NUMBER OF FULL CYCLES

SC142/SC147
10.

MAXIMUM ALLOWABLE PEAK FULL CYCLE SURGE

1389

(NON-REPETITIVE) ON-STATE

CURRENT

ISOLATED TAB
SC140,

NON-ISOLATED TAB

2,

SC141,

3, 6, 9,

SC151
300
fc<"s

200
1

50

00
90
80
70

60
50

40
Ul

z
<

30
25
20
15

1.5

PULSE BASE WIOTH

4
-

I.5

MILLISECONDS

PULSE BASE WIDTH - MILLISECONDS

SC140/SC141

SC142/SC147

300

die
us

200

150

100

1
(n
_
CVJ

90
80
70

NOTES:

60

nal

1.

Curves apply for either polarity of main termi2 referenced to main terminal 1.

50

2.

Curves for half sine wave current waveform.

40

3.

Gate control may be

lost

during and immedi-

ately following the surge current interval.

C\J

30
25

UJ

m a

4.

Current surge may not be repeated until junction temperature has returned to within steadystate rated value.

5.

Junction temperature immediately

surge = -40C to 100C.

a.

3
<

20

15

a:

10
1

l.

P JLSE BA.>E WIDTH

10

MILLISEC ONOS

SC1 43 / SC1 46 / SC1 49 / SC1 51

11.

SUBCYCLE SURGE (NON-REPETITIVE) ON-STATE CURRENT AND

2
l

RATINGS

NOTES:
1.

Curve

defines

temperature

rise

of

either junction above case temperature for equal amplitudes symmetrical

sine wave current at 50 and 60 Hz.
2.

Curve considers junction temperature

measured immediately after the final
cycle of current.

10
20
50 I00 200
500 IK
2K
NUMBER OF SINE WAVE CURRENT CYCLES

I0K

3.

Gate will regain control if temperature is maintained below rated value

and load current is reduced or maintained at RMS value.

4.

For more than 100 cycles of current

the case temperature rise must be observed and used in calculating the total junction temperature.

5.

Junction temperature rise above case

is defined as apparent transient thermal impedance times average conduction power dissipated during full cycle
conduction.

6.

Apparent steady-state value is not the

same as JEDEC value listed as steadystate in characteristics table.

12.

MAXIMUM APPARENT TRANSIENT THERMAL IMPEDANCE

(50 AND 60 Hz SINE WAVE OPERATION)
1390

prior

to

9 10

NON-ISOLATED TAB

ISOLATED TAB
SC140,

2,

SC141,

3, 6, 9,

SC151

STANDARD TYPE

:ase temperature
reference point

TYPE

60

t-3

141

MAX

05

2.41

2.67

.1

3.68
3.58
3.00 REF.

.145

.118 REF.

.120

2.79

.0015

.004

.650

14.23

16.51

.570

.390

.420

9.90

10.67

.590
.220

90

.210

4.82

5.33

.39

,030

.50

.76

,65

.040
.020
72

202

5.13

MIN

TYP.

MAX

3.05

.560

J|

.095

MM

METRIC

INCHES
MIN

.MO

H|

.89

1.37

SYMBOL

4.83

4.06

90

.73

.029

.054 TYP.

0b

e2

MAX

MIN
.

-JCDCC TO-tO-Ai

METRIC MM
MAX
MIN

INCHES

SYMBOL

MT
MAiN TERMINAL
MAIN TERMINAL 2 (MT2)
GATE
MOUNTING TAB (ELECTRICALLY COMMON TO MT2
NON - ISOLATED DEVICES ONLY
NON ISOLATED DEVICES ONLY

.035

.055

.040

.065
.260

6.09

.240
.115
.085
.054 REF.
.500
.360

2.15

6.60
2.92

1.37 REF

12.70

9.14

.236

.232

.01

5.

89

AA
AB
AC
AD
AE

.070

.087

.097

.120

.1

30

3.04

.025
.045

.035

.63

.055

1.14

.353

.433

8.96

.78

2.46
3.30
.89

.40

5.99

1.00

CENTER LEAD CUT

FLAT MOUNTING
CHASSIS HEATSINK

TO -66 EQUIVALENT
(NON -ISOLATED DEVICES ONLY)

.01

4.36
2.20

.1

.10

14.99
5.59

14.47

NON ISOLATED DEVICES ONLY)

^2-

7
/

1)1/

CENTER LEAD
CUT-OFF

IP

CENTER LEAD

CUT-OFF

TYPE 4

TYPE 3

TYPE 2

FLAT MOUNTING
RADIATOR HEATSINK

UPRIGHT MOUNTING

AD
AC

AA

f\Z^AC
AB^

"0a

AB

TYPE 6

TYPE 5
1391

ISOLATED TAB
SC140,

2,

NON-ISOLATED TAB
SCI 41,

3, 6, 9,

SCI 51

POWER PAC TRIAC PART NUMBER DESIGNATION

SC1

40

POWER PAC TRIAC

CURRENT RATING & ISOLATION
40
6.5 A RMS Isolated
41
A RMS Non- Isolated
6
42= 8 A RMS Isolated
43= 8 A RMS Non-Isolated
46= 10 A RMS Non-Isolated
47 = 10 A RMS Isolated
49= 12 A RMS Non-Isolated
51 = 15
A RMS Non-Isolated

B 2

LEAD FORMING CONFIGURATIONS

VOLTAGE RATING
B = 200
D = 400
E = 500
M = 600

None = Standard Type

Type
2 =
Type
3 =
4 =
Type
Type
5 =
6 =
Type

Volts
Volts
Volts
Volts

NOTE:

AC lamp dimming because

of their

ability

to conduct in both directions.

The

circuit

metrical

shown here incorporates General

Electric's

ST4 asym-

AC

trigger integrated circuit. This device greatly reduces the

snap-on effects that are present in symmetrical trigger circuits and mini-

mizes control circuit hysteresis. This performance is possible with a

single RC time constant, whereas a symmetrical circuit of comparable
performance would require at least three additional passive components.

The SC151D, in combination with an optically-isolated SCR (4N40), allows this highly transient immune, TTL compatible,
zero voltage switching design for a normally open 15 ampere solid-state relay. Zero voltage
crossing is sensed via the base
emitter diode drop of the 2N3859 which then allows the 4N40 SCR portion to be triggered and
apply gate signal to the

SC151 triac. The transient immunity

400 volt semiconductors.

OTHER TRIAC,
PUBLICATION
NUMBER

is

designed in through use of the

GE-MOV,

the snubber

network and the choice of

TRIGGER AND APPLICATION INFORMATION AVAILABLE FROM GENERAL ELECTRIC

PUBLICATION

TRIAC SPECIFICATION SHEETS

NUMBER

APPLICATION NOTES

175.13

SC136

200.35

Using the Triac for Control of

175.34

Hermetic Triacs

200.53
201.12

Solid State Incandescent Lighting Controls

TRIGGER SPECIFICATION SHEETS

175.30

175.32
65.32

ST2
ST4
2N4992

AC

201.19
Trigger)

Line

Voltage

Power

and Power

RF

Filter Considerations for Triac

& SCR

Circuits

(Silicon Bilateral Switch)

201.24

RELIABILITY REPORT
95.29

AC

AC

Regulator

(Diac)

(Asymmetrical

500 Watt

Thyristor Selection for Incandescent

Lamp

Loads

Glassivated Triac Reliability Report

200.55

Thermal Mounting Considerations for

Power Semiconductor Packages

tic

1392

3
4
5
6

See Outline Drawing.

TYPICAL CIRCUITS
Triacs are especially useful in

Plas-

Bi-Directiona!

Triode Thyristor

STUD/f ; a n ge

Hermetic Triacs
6A

to

40A RMS

Up

to

600

SC240
SC245
SC250
SC260
SC265

Volts

AC switch which may be gate triggered from an OFFfor either polarity of applied voltage. These triacs are
ON-State
State to an
which incorporate General Electric 's patented
devices
sealed
hermetically
The

triac is a silicon

POWER-GLAS
It

The

upon normal passivation techniques.

bond between the silicon chip and the glass coating.

process that improves

provides an intimate

resulting stable, low-level leakage current provides excellent

and demonstrated

PRESS-FIT

performance

SC241
SC246
SC251
SC261
SC266

reliability.

FEATURES:

maximum

POWER-GLAS

Very low off-state (leakage) current at room and elevated temperatures.

Inherent immunity from non-repetitive transient voltage damage (max.

passivated silicon chip for

critical rate-of-rise

reliability.

of on-state current subsequent to voltage breakover

triggering, di/dt = lOA/jusec.)

Low

Excellent surge current capability.

1800 volts RMS Surge Isolation Voltage on Isolated Triacs.

Selected types available from factory for use where circuit requires

on-state voltage at high current levels.

operation:

with popular zero voltage triggering IC's

at

at

higher voltage levels

at higher

SIX BASIC

400 Hz

with low gate trigger current

commutating dv/dt

levels.

PACKAGES

Other packages available upon request.

PRESS-FIT

ISOLATED STUD

ISOLATED

With Press-on
MT2 Terminal

TO-3

TYPE

FLANGE

TYPE 4

NON-ISOLATED

ISOLATED STUD

NON-ISOLATED

STUD

With Solder Ring

MT2 Terminal

TO-3

FLANGE

I
TYPE

TYPE 3

1393

TYPE

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241, 46, 51, 61, 66

MAXIMUM ALLOWABLE RATINGS

RMS ON-STATE
CURRENT
TYPE

REPETITIVE PEAK
OFF-STATE VOLTAGE,

't(rms) (d

Vdrm (2

SC240/241

SC245/246

>

AMPERES

10

PEAK ONE FULL CYCLE

SURGE (NON-REP) ON-STATE
CURRENT, TSM AMPERES

\n FOR FUSING
FOR TIMES AT(3)

50 Hz

60 Hz

AMPERES

AMPERES

(RMS AMPERE) 2
SECONDS, 1.0
MILLISECONDS

(RMS AMPERE) 2
SECONDS, 8.3
MILLISECONDS

VOLTS

VOLTS

VOLTS

VOLTS

200

400

500

600

74

80

26.5

200

400

500

600

90

100

20

41.5

SC250/251

15

200

400

500

600

90

100

20

SC260/261

41.5

25

200

400

500

600

230

250

150

260.0

200

400

500

600

275

300

300

375.0

SC265/266

40

Peak Gate Power Dissipation, P

GM (4)

SC245/SC246 SC25 / SC251 SC260/SC261

'

10 Watts for 10 Microseconds (See Figure 5A)

10 WattS f r 20 ^seconds (See Figure 5
B)

>

SC265/SC266'
Average Gate Powe'r Dissipaiion,'
Peak Gate Current, I GM (4)
P^oi,

^w

i*

" P " " '^ JfA

(See Figures 6A, 6B,

\^

i7

Storage Temperature,

G(Av

6C)

T s;g

-40C to + 125C

Operating Temperature, Tj

SC240/SC241, SC245/SC246
SC250/SC251, SC260/SC261, SC265/SC266
Stud Torque (Isolated and Non-Isolated Stud Types)

'

Insertion Pressure (Press-Fit Types)

2 5 Lb. -In.' (29

(3

Surge Isolate Voltage (5)

56

+]on

40C to +1 15C
Kg-Cm) (2 8 N-M)
"

^^

x 1q3) 800
[_

RJ>

ON -STATE
MT2 +
QUADRANT

OFF
STATE

v^A~\,0FF

MT 2 3*0 QUADRANT

STATE
*

ON-STATE

MAIN
TERMINAL
TERMINAL ARRANGEMENT

TYPICAL CHARACTERISTICS
VOLT-AMPERES
NOTES:

HW:CK^

fM

3nd 6

^ WUh 36 COndUCti0n and

3t C3Se leferenCe P0int (see outline

<^> ^mperature as indicated

CASE REFERENCE POINT TEMPERATURE CHART

A RMS

Device

SC240/SC241
SC245/SC246
SC250/SC251
SC260/SC261
SC265/SC266

10
15
25

40

Stud/
Press-Fit

Isolated Stud

Non-Isolated
TO-3 Flange

TO-3 Flange

82C
80C
86C
80C
81C

80 C
78C
83C
75C
74C

80C
78C
83C
75C
74C

79C
76C
80C
71 C
68C

2.

Vdrm ratings apply for zero gate

3.

I2 t ratings apply for either polarity of

4.

Ratings apply for either polarity of gate terminal

referenced to main terminal

Isolated

voltage only. Ratings apply for either polarity

of main terminal 2 referenced to
main terminal 2 referenced to main terminal 1.

1394

main terminal

in

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241, 46, 51,61,66

CHARACTERISTICS
TEST
Repetitive Peak OffState Current

SYMBOL

MIIM.

TYP.

MAX.

mA

Idrm

REF.

TEST CONDITIONS

UNITS

Vdrm
titive

= Maximum Allowable RepePeak Off-State Voltage Rating.

NOTE
1

Gate Open Circuited.

SC240/SC241

SC245/SC246
SC250/SC251

0.5

SC260/SC261

T c = +25C
T c = Tj (Max.)

0.2
1.0

SC265/SC266
Peak On-State

T c = +25C
T c = Tj (Max.)

0.1

Vtm

--

Volts

Pulse.

Voltage

SC240/SC241

SC245/SC246
SC250/SC251
SC260/SC261

SC265/SC266
Critical Rate-of-Rise

1.65

1.65

1.38
Volts/jUsec

100

SC245/SC246

100

150

SC250/SC251

100

250

SC260/SC261

50

150

50

150

SC265/SC266

Volts//oisec

dv/dt (c)

Maximum Rated Peak

Voltage. Gate

SC245/SC246

SC250/SC251

SC260/SC261

SC265/SC266

mAdc

Jgt

VD

Open

1,7

SC240/SC241

SC245/SC246
SC250/SC251

= 12Vdc

Rl

50

MT2+

Gate+

100

50

MT2-

Gate-

100

50

50

80

MT2+ GateMT2+ Gate+

80

MT2-

50

80

MT2+Gate-

80

MT2+

Gate+

100

80

MT2-

Gate-

100

80

MT2+ GateMT2+ Gate+

50

MT2- GateMT2+ Gate-

50

120

120
120

Off-State

Circuited.

TRIGGER MODE

Current

SC265/SC266

It(RMS) = Rated Maximum AllowRMS On-State Current, VDRM =

able

SC240/SC241

SC260/SC261

Circuited. Exponential Voltage

Waveform.

30

Gate Trigger

2%.

Open

SC240/SC241

DC

msec, Wide

<

1.58

dv/dt

Duty Cycle

TM = 8.5 A Peak
TM =14 A Peak
A Peak
I TM = 2
=
IT m
35
A Peak
=
I TM
56 A Peak
T c = Tj Max. Rated V DRM Gate

1.83

of Off-State Voltage
(Higher Values May
Cause Device
Switching.)

Critical Rate-of-Rise
of Commutating
Off-State Voltage
(Commutating dv/dt)

T c = +25C, I TM =

Gate-

50

25

50

25

Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
Ohms
Ohms

TC

+25C

-40C

+25C

I
-40C

CONTINUED:

1395

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

_SC241,46,51,61,66

TEST

DC Gate Trigger
Voltage

SYMBOL

MIN.

TYP.

CHARACTERISTICS

MAX.

UNITS

VGT

Vdc
2.5
2.5

2.5
3.5

DC

Gate Non-

Trigger Voltage

TEST CONDITIONS

Vn

TRIGGER MODE

Rl

MT2+ Gate+
MT2- GateMT2+ GateMT2+ Gate+

Ohms
100 Ohms
50 Ohms
50 Ohms
50 Ohms
25 Ohms

MT2-

Gate-

3.5

MT2+

Gate-

0.2

0.2

Holding Current

mAdc

SC240/SC241
SC245/SC246

50

SC250/SC251

100

SC260/SC261

75

DC Latching
Current

T"C

Gate-

1000

Max.

Gate-

Ohms

Tj

Gate+

Gate+

Main Terminal Source Voltage = 24

Vdc. Peak Initiating On-State Current
= 0.5 Amps, 0.1 milliseconds to 10
milliseconds wide pulse. Gate Trigger
Source = 7 Volts, 20 Ohms

T c = +25C
T c = -40 C

mAdc

Main Terminal Source Voltage = 24

Vdc. Gate Trigger Source = 15 Volts,
100 Ohms, 50jusec pulse width, 5
Msec rise and fall times maximum.

TRIGGER MODE
100

MT2+

100

MT2- GateMT2+ GateMT2+ Gate+

MT2- GateMT2+ Gate-

200
200
200

400
Steady State

RflJA

Steady State

Thermal Resistance

SC240/SC241

SC245/SC246

SC250/SC251

-40 C

Tc = +25C
Tc = -40C

150

Thermal Resistance

+25C

2, 3

MT2+
MT2MT2+
MT2-

0.2

SC265/SC266

TC

Vdc

0.2

45

R0JC

NOTE

100

TRIGGER MODE

DC

REF.

= 12 Vdc

3.5

vgd

(Continued)

C/Watt

C/Watt

TC

Gate-

+25C

-40C

Junction-to-Ambient

Junction-to-Case.
This characteristic is useful as an acceptance test at an incoming inspection station.

2.80

Non-Isolated Stud/Press-Fit

2.95

Isolated Stud

2.95

Non-Isolated TO-3 Flange

3.10

Isolated

2.00

Non-Isolated Stud/Press-Fit

2.15

Isolated Stud

1,

TO-3 Flange

2.15

Non-Isolated

2.30

Isolated

2.00

Non-Isolated Stud/Press-Fit

TO -3

Flange

TO-3 Flange

2.15

Isolated Stud

2.15

Non-Isolated TO-3 Flange

2.30

Isolated

1396

1,4

TO-3 Flange

CONTINUED:

CHARACTERISTICS

PRESS-FIT

SC240, 45, 50, 60, 65

SC241,46,51,61,66

(Continued)

TEST

SYMBOL

SC260/SC261

Rejc

TYP.

MAX.

UNITS

_
_
_

1.80

C/Watt

Isolated Stud

1.95

Non-Isolated TO-3 Flange

2.10

Isolated

1.00

Non-Isolated Stud/Press-Fit

1.15

Isolated Stud

1.15

Non-Isolated TO-3 Flange

TO-3 Flange

Isolated

1.30

NOTE
1,5

Non-Isolated Stud/Press-Fit

1.95

TO-3 Flange
6

Junction-to-Case.

C/Watt

RflJC(AC)

REF.

TEST CONDITIONS

MIN.

SC265/SC266

Apparent Thermal

STUD/TO-3 FLANGE

This characteristic is useful in the

calculation of junction temperature
rise above case temperature for AC
current conduction.

Resistance

_
_

SC240/SC241

SC245/SC246

SC250/SC251

SC260/SC261

SC265/SC266

2.00

Non-Isolated Stud/Press-Fit

2.20

Isolated Stud

2.20

Non-Isolated TO-3 Flange

2.40

Isolated

TO-3 Flange

1.50

Non-Isolated Stud/Press-Fit

1.65

Isolated Stud

1.65

Non-Isolated TO-3 Flange

1.80

Isolated

1.45

Non-Isolated Stud/Press-Fit

TO-3 Flange

1.60

Isolated Stud

1.60

Non-Isolated TO-3 Flange

1.75

Isolated

1.25

Non-Isolated Stud/Press-Fit

1.40

Isolated Stud

1.40

Non-Isolated TO-3 Flange

1.55

Isolated

0.80

Non-Isolated Stud/Press-Fit

TO-3 Flange

TO-3 Flange

0.95

Isolated Stud

0.95

Non-Isolated TO-3 Flange

Isolated

1.10

TO-3 Flange

J
7.

NOTES:
1.

2.

Values for these

Main terminal

1 is

main terminal

4.

Commutating

the reference terminal for main terminal 2 and

maximum

SC240/SC241

allowable off-state voltage.

The junction-to-ambient value

is

under worst case conditions;

i.e.,

T J(max) - TC
SC260/SC261

temperature
Tj(max) = maximum junction
= case temperature
Jq
= average on-state power

Maximum

Non-Isolated TO-3 Flange

Isolated TO-3 Flange
Isolated Stud

13.5 A/ msec.

SC265/SC266

Non-Isolated TO-3 Flange

Isolated

1397

TO-3 Flange

75

75

81

Non-Isolated Stud/Press-Fit

Apparent Transient Thermal Impedance.

83

71

TO-3 Flange

Isolated Stud

86
83
80
80

Non-Isolated TO-3 Flange

Isolated

PTfAV)

See Figure 7 for

8.0 A/msec.

Non-Isolated Stud/Press Fit

PT(AV)
where:

5.4 A/msec.

TO-3 Flange
TO-3 Flange

Non-Isolated

Isolated Stud

SC250/SC251

79
80
78
78
76

Non-Isolated Stud/Press-Fit

wave
Apparent thermal resistance applies for a 50 or 60 Hz full sine
formula:
of current. It can be calculated with the following
Apparent thermal resistance

80

Isolated

listed are the limiting

82
80

Isolated

TO-3 Flange
TO-3 Flange

Isolated Stud

SC245/SC246

states:

operating
value for either direction.

3.2 A/msec.

T C (C)

Non-Isolated

Non-Isolated Stud/Press-Fit

in
Junction-to-case steady-state thermal resistance (Rg jc) is tested
accordance with EIA-NEMA Standard RS-397, Section 3.3.2, which
"Thermal characteristics are to be measured with the device

only one direction. " The values

di/dt

Non-Isolated Stud/Press-Fit
Isolated Stud

With Vtj equal to

in

Package

Device

with No. 22 copper wire used for electrical contact to the terminals
and natural convection cooling.
5

conditions are:

gate terminal.
3.

test

Characteristic values apply for either polarity of

referenced to main terminal 1.

74
21.5 A/msec.

74
68

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241,46,51,61,66
115

o:

105

< 85
ISOLATED
TO-3 FLANGE

notes:
i.

2.
3.

5 5 J;

current waveform is sinusoidal at

50 OR 60 Hz.
CONDUCTION ANGLE -360*
CASE TEMPERATURE MEASUREMENT POINT AS
SHOWN ON OUTLINE DRAWING.
2

RMS ON-STATE CURRENT,

75

notes:

65

2.
3.

current waveform is sinusoidal

AT 50 OR 60 Hz.
CONDUCTION ANGLE = 360
CASE TEMPERATURE MEASUREMENT POINT
AS SHOWN ON OUTLINE DRAWING.

ISOLATED
TO-3 FLANGE

55

10

|4

12

I T(RMS )

10
15
20
25
30
35
RMS ON-STATE CURRENT, I T (RMS) AMPERES

AMPERES

SC240/SC241, SC245/SC246, SC250/SC251

SC260/SC261, SC265/SC266

MAXIMUM ALLOWABLE CASE TEMPERATURE

VS.

RMS ON-STATE CURRENT

s
z

RMS ON-STATE CURRENT

I( RMS )

AMPERES

SC240/SC241, SC245/SC246
2.

MAXIMUM AVERAGE POWER

RMS ON-STATE CURRENT, Ij(RMS) "AMPERES

SC250/SC251, SC260/SC261, SC265/SC266

DISSIPATION VS. RMS ON-STATE CURRENT

I
20
30
40
50
RMS ON-STATE CURRENT, I T(RMS) AMPERES

I0

50

SC240/SC241, SC245/SC246
3.

MAXIMUM AVERAGE POWER

I00

ISO

RMS ON-STATE CURRENT,

200
250
AMPERES

I T{RMS )

SC250/SC251, SC260/SC261, SC265/SC266

DISSIPATION VS. RMS ON-STATE

1398

CURRENT (HIGH LEVEL)

300

10

1.4

26

2 2

1.8

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241,46,51,61,66

3.0

2.5

2.0

3.0

3.5

4.5

4.0

5.0

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

SC245/SC246

SC240/SC241

NOTES:
1.

2.

TM

msec, wide pulse, duty cycle

Curves apply for either polarity of

enced to main terminal

'0.5

2.0

2.5

3.0

4.0

3.5

<

2%.

main terminal 2

refer-

1.

4.5

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

SC250/SC251

I.O

2.0

I.5

2.5

3.0

0.5

3.5

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

I.5

SC265/SC266

SC260/SC261
4.

I.O

2.0

2.5

INSTANTANEOUS ON-STATE VOLTAGE-VOLTS

MAXIMUM ON-STATE VOLTAGE

1399

VS.

ON-STATE CURRENT

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241, 46, 51,61,66

note:
.

0.5

I.O

2.0

I.5

shaded area represents locus of all possiple dc (52qs)

guarante ed triggering points from -40c to +ii5*c

2.5

.04 .06 .08

INSTANTANEOUS GATE CURRENT -AMPERES

0.2

0.1

0.4

0.6 0.8

2.0

1.0

INSTANTANEOUS GATE CURRENT-AMPERES

SC240/SC241, SC245/SC246,SC250/SC251, SC260/SC261

SC265/SC266

GATE CHARACTERISTICS AND RATINGS

5.

350

350

300

2 300
01

UJ

UJ
O-

1250

* 250
3

-i

^TC -40'C

_j

?200
Z

*200

\TC =-40*C

*
u

TC = 25"C

z
a:

150

<I00

I50

UJ

25 "C

<
o.

>

(-

UJ

a:

I00

4
UJ

50

a.

0,
>

G/*TE

sc 24 0/S;c241

Hj

w DT

PU -SE

>

>

VV

It>

l( 5

'

II 3

l<>

23

50

ICR OSf:co NDS

S
6
G TE

7
Plj

s C2 45 /S(Z2i16, SC:2EiO/ SC 25 1
;

LSf:

IC>

II

12

13

14

I*

I6

17

* IDT H-MICROSECONDS

>c: 26( )/S C261

NOTES:
1.
2.

3.

Rectangular gate current pulse applied.

Rise and fall times equal to or less than
pulse width.

Main terminal voltage = 12 vdc, load

10%

resistor

acteristic table).
4.

10

II

12

13

14

15

GATE PULSE WIDTH-MICROSECONDS

16

17

18

19

Applies for

all

three guaranteed trigger modes.

20

SC265/SC266
6.

MAXIMUM GATE TRIGGER CURRENT

1400

VS.

GATE PULSE WIDTH

of gate

(see char-

IS

20

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241,46,51,61,66
ISOLATED

TO-3 FLANGE

PRESS-FIT AND
NON-ISOLATED STUD

ISOLATED STUD
AND NON-ISOLATED
TO-3 FLANGE

400 1000
100
NUMBER OF SINE WAVE CURRENT CYCLES
40

10

400 KX>0
40
I00
|0
NUMBER OF SINE WAVE CURRENT CYCLES

4000 IOPOO

lO/OOO

SC245/SC246

SC240/SC241

4000

400 I000
40
I00
I0
NUMBER OF SINE WAVE CURRENT CYCLES

4000

IOjOOO

400 I000
I00
40
io
NUMBER OF SINE WAVE CURRENT CYCLES

4000 I0P00

SC260/SC261

SC250/SC251
NOTES:
1.

2.

temperature rise of
Curves define
either junction above case temperature for equal amplitudes symmetrical
sine wave current at 50 and 60 Hz.
Curve considers junction temperature
measured immediately after the final
cycle of current.
will regain control if temperature is maintained below rated value
and load current is reduced or maintained at RMS value.

3.

Gate

4.

For more than 100 cycles of current

the case temperature rise must be observed and used in calculating the total junction temperature.

Junction temperature rise above case

is defined as apparent transient thermal impedance times average conduction power dissipated during full cycle
conduction.
6. Apparent steady-state value is not the
5.

I0

NUMBER OF

40
SINE

400

I00

I000

iopoo

WAVE CURRENT CYCLES

same as

7.

JEDEC

value listed as steady-

state in characteristics table.

SC265/SC266

MAXIMUM APPARENT TRANSIENT THERMAL IMPEDANCE

1401

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241, 46, 51, 61, 66

100

350

notes:

notes:

GATE CONTROL MAY BE LOST DURING ANO

IMMEDIATELY FOLLOWING THE SURGE
CURRENT INTERVAL.
CURRENT OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE HAS RETURNED
TO WITHIN STEADY-STATE RATED VALUE

50HzN

gate control may be lost during and

immediately following the surge
current interval.
current overload may not be repeated
until junction temperature has returned
to within steady-state rated value.

i.

70

50HzN
SC245
SC246
SC250
SC25I

SC240
SC24I

20

10

30 40

60 80 100

5 6
8 10
20
NUMBER OF FULL CYCLES

NUMBER OF FULL CYCLES

SC240/SC241, SC245/SC246, SC250/SC251

SC260/SC261, SC265/SC266

1000

a:

or">

o
5|

800
600
500
400
300

__

=
SC265/266
SC 260/261

uj< 200
Oil

notes:
111

UJ

100

i.

80
60 _ 2.
50

40

SC245/246
SC250/25I

curves apply for either polarity

of main terminal 2 reference to
main terminal i.
curves apply for half sine wave
current waveform.
SC245/246 -

wor 100

30

SC240/24i^

"<->

80

Afc
""?

so
50
40

30

20

SC250/25I

20

notes:
1.

a.

2
3
4
5
6
PULSE BASE WIDTH-MILLISECONDS
2
I

curves apply for either polari TY

of main terminal 2 reference TO
main terminal
1.

2.

9.

60 80 100

MAXIMUM ALLOWABLE FULL CYCLE SURGE CURRENT FOLLOWING RATED LOAD

CONDITIONS

8.

cvi

30 40

curves apply for half sine wav E

current waveform.

10

9 10

PULSE BASE WIDTH-MILLISECONDS

RATING FOLLOWING RATED LOAD

CONDITIONS

10.

SUB-CYCLE SURGE FOLLOWING RATED

LOAD CONDITIONS

I
5
10
20
50
TYPICAL COMMUTATING dv/dt-VOLTS/MICROSECOND

11.

100

NORMALIZED DEVICE RATED COMMUTATING

di/dt VS. COMMUTATING dv/dt (Typical
Values)
1402

'

10

OUTLINE DRAWINGS

STUD/TO-3 FLANGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241,46,51,61,66

MT1 TERMINAL SPECIFICATION

Amperes

Device

MT1

RMS

Terminal

A
A
A

SC240/SC241

See Figure

SC245/SC246

10

See Figure

SC250/SC251

15

See Figure

SC260/SC261

25

See Figure B

SC265/SC266

40

See Figure B

terminal supDevice current rating determines the standard MT1

than
on all hermetic triac package variations. Devices rated less
terminal as shown
25 Amperes RMS will be supplied with a pierced
Amperes RMS and above will be
in Figure A. Devices rated 25
1 >.
supplied with a flag terminal as shown in Figure B

plied

50 TPI

(KNURL
DIA.)

FIGURE A
(Pierced MT1 Terminal)

(Flag

FIGURE B
MT1 Terminal)

<

MAIN TERMINAL 2
(CASE)
2

6'
MAIN TERMINAL

ISOLATED STUD
TYPE 2

TERMINAL ARRANGEMENT

ISOLATED STUD
TYPE 3
VIEW SHOWING

TERMINAL Z

ta

ISOLATED TO-3 FLANGE

TYPE 4

SYMBOL

INCHES
MAX.
MIN.

METRIC
MIN.

MAX.

.505

12.73

12.82

.475

11.87

.501

B
C

.467

D
E

.360

.301

6.60

.083

.097

2.11

.177

MM

REF

4.50

12.06

REE
765
2.46
9.55
19.86

.782

G
J

.081

.089

2.06

226

.060

.069

1.53

1.75

1.064

.284

.302

N<

1.150

.475

7.22

27.02
7.67

29.21

SYMBOL

.580

Jill

AB
AC
AD

AE
AF
AG
AH

.975

24.76

.610

14.74

1.260

.220 REF
.023

.012

.150

229

.251

1.182

1.192

10.98

11.22

.086

.098

2.19

248

AQlD

.552

.562

14.03

14.27

AR

.240

.260

6.10

660

.145

.160

3.68

4.06

6.37

30.27

.161

3.81

1.300

.630

.119

.131

1.195

5.82

26.03

1.567

.975

2.
.58

.515

3.03

mm) from

the center of the

3.

39.80

bottom

of the flange.

One external tooth lock washer and one nut (both steel,
cadmium plated) are supplied with each stud and isolated
stud unit.

4.08
33.02

4.

16.00

3.32

30.35

5.

13.08

6.
.

Insulation hardware for stud devices consisting of solder

terminal, mica washers and one nylon bushing are available
at extra cost upon request.

Other standard package variations are available upon request.

Metric stud 8mm x 1.25 (.315 in. x .049 in.) is available

upon

request.

WARNING

care.
Isolated products described in this specification sheet should be handled with
contains BERYLLIUM OXIDE as a major ingredient.

Do not

table data.

Case temperature is measured for press-fit devices at the center of the base; for stud types 1 2 and 3 at the center of any
hex flat; for TO-3 outline mounting flange types 4 and 5 at
,

3.81

38.28
24.77

1.507

.150

REF

30.03

Outline drawings and table dimensions are given for devices

with the MT1 flag terminal (Fig. B). To calculate the height
of devices with the MT1 pierced terminal (Fig. A), subtract

0.282 inches (7.100

14.85

1.025

AJ

AM<U

15.49

AK
AL

12.06

5.59
.31

3.56

1.

32.00

4.07

.160

NOTES:

MM
MAX.

.585

.140

METRIC
MIN.

S
T

(6)

442
UNF2A

INCHES
MAX.
MIN.

AN
AP

.432
1/4-28,

NON-ISOLATED TO-3 FLANGE

TYPE 5

The ceramic portion of

dust resulting
crush, grind, or abrade these portions of the thyristors because the

1403

these tnynstors

from such action may be hazardous

if

inhaled.

STUD/TO-3 FLAMGE

PRESS-FIT

SC240, 45, 50, 60, 65

SC241, 46, 51,61,66

HERMETIC TRIAC PART NUMBER DESIGNATION

SC2 40 B 2
HERMETIC TRIAC WITH POWER-GLASTM CH IP
CURRENT RATING & PACKAGE STYLE
40 = 6 A RMS Stud/TO-3 Flange
41 = 6 A RMS Press-Fit
45 = 10 A RMS Stud/TO-3 Flange
46 = 10 A RMS Press-Fit
50 = 15 A RMS Stud/TO-3 Flange
51 = 15 A RMS Press-Fit
60 = 25 A RMS Stud/TO-3 Flange
61 = 25 A RMS Press-Fit
65 = 40 A RMS Stud/TO-3 Flange
66 = 40 A RMS Press-Fit

STUD/TO-3 FLANGE PACKAGE VARIATI ONS

VOLTAGE RATINGS
B = 200 Volts
D = 400 Volts

None = Non-Isolated Stud Mount

2 = Isolated Stud Mount with

E = 500 Volts
= 600 Volts

Press on MT2 Terminal

3 = Isolated Stud Mount with

Solder Ring

MT2

Terminal

4 = Isolated on TO-3 Outline

Mounting Flange
5 = Non-Isolated on TO-3 Outline

Mounting Flange
9 = Other Standard Variations

MOUNTING CONSIDERATIONS
Installation of Prats-Fit Devics in

When

Heat Sink

Attachment of Press-Fit Device to Printed Circuit Board

For certain light load applications, the Triac can be inverted and
using a special brass bracket (A7 149451), dip-soldered into a printed
circuit board. The feet on the bracket act both as a
mechanical
support and Main Terminal 2 (case) electrical connection. For Triacs
preassembled into the bracket, add -X24 to the type number for

press fitting a Triac into a heatsink, the following

specifica-

and recommendations apply:

Heatsink materials may be copper, aluminum, or
steel. For
maximum heat transfer and minimum corrosion problems
copper is recommended. The heatsink thickness,
or amount of

tions
1.

heatsink wall,

contact with the Triac should be 1/8 inch

into which the Triac is pressed must be
A sU8h { chamfer on the hole should be
-9}
used. This hole may be punched in a flat
plate and reamed, or

Vfanc 1

example, SC251BX24.

^memch
.ter

extruded and sized in sheet metal.

The
knurled section of the Triac should be in contact
with the heatsink to insure maximum heat
transfer. The Triac
st " l be inserted into a heatsink deeper
than the knurl height
%?
llie Tnac insertion force must not
exceed 800 pounds. If the
insertion force approaches this value before
complete insertion
either the Tnac is misaligned with the hole
or the Triac-to-hole
interference is excessive. The insertion force must
be uniformly
applied to the top face (terminal end) of the Triac
within an
annular ring which has an inside diameter of not
less than 0.370
inch and not larger than 0.390 inch; the outside
diameter of the
insertion force must not be less than 0.500 inch
The thermal resistance between the Triac case and
a copper
heatsink wiU not exceed 0.5C/W, if the Triac is
inserted in the

e"^

A
4.

5.

PRINTED
"CIRCUIT
Q
BOARD

,_r

.PRINTED WIRING TO
Vp
ALL 3 'CONNECTIONS

BOTTOM VIEW
OF ASSEMBLY
BEFORE
MOUNTING
TO BOARD

Attachment of the Stud & Isolated Stud Device To a Heat Sink

These devices require certain precautions in order to insure good
thermal transfer. The chassis hole must be drilled and deburred and
should be between .005 and .015 inches larger than the stud outside
diameter. The use of a Torque wrench is highly recommended and
must be used within the torque limits indicated on page 2. A good
grade of silicone grease will minimize contact thermal resistance.

manner described.

Soldering of Press-Fit Package to Heat Sink

6
1 8**"" P acka8 e may be soldered directly to
a heatsink using
60/40 (Pb-Sn) solder at a temperature of about 200C.

J? ,?

OTHER TRIAC, TRIGGER AND APPLICATION INFORMATION AVAILABLE

FROM GENERAL ELECTRIC
PUBLICATION

NUMBER
1

75. 1 3

TRIAC SPECIFICATION SHEETS

PUBLICATION

NUMBER

SC1 36 (Power Tab Triac)

200.32

APPLICATION NOTES

Variety of Mounting Techniques for Press Fit

Devices

175.35

Power Pac Triacs

200.35

Using the Triac for Control of

175.30

ST2(Diac)

200.51

Better

175.32

ST4 (Asymmetrical AC Trigger)

2N4992 (Silicon Bilateral Switch)

200.53

Solid State Incandescent Lighting Controls

201.12

500 Watt

RELIABILITY REPORT

201.19

RF

201.24

Thyristor Selection for Incandescent

TRIGGER SPECIFICATION SHEETS

65.32

95.29

Glassivated Triac Reliability Report

1404

Room

AC

AC Power

Conditioning Via Solid State Controls

Line Voltage and Power

Filter Consideration for Triac

& SCR Circuits

Lamp Loads

Diac

ST2

Silicon Bidirectional Trigger

The DrAC

is

a diffused silicon bi-directional trigger diode

be used to trigger
This

has

device

the G-E TRIAC or

three-layer

which may

Silicon Controlled Rectifiers.

structure

having negative resistance

switching characteristics for both directions of applied voltage.

VOLT - AMPERE CHARACTERISTICS

FOR RIGHT ANGLE BEND OF
LEADS, ALLOW 1/8 MINIMUM DISTANCE
BETWEEN HOUSING AND RADIUS OF BEND
Y

(B0) 2

(BO)2
!

*V
'(BO)

(>

.140

MAX

V(BO),

Storage Temperature.

Tstg -40Cto+150C

Operating Temperature

MAXIMUM RATINGS
Peak Current (10

jusec duration,

120 cycle repetition

-40Cto+100C

Tj

50 C Ambient

at

Ip

rate)

Peak Output Voltage*

Amperes Max.

t3

Volts Min

*CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST

DIAC

CHARACTERISTICS
Test

Breakover Voltage

at 25

Min.

Symbols

V(BR)i and V(BR) 2

Breakover Voltage Symmetry

I(BR)i and I(BR)2

|V(BR)i|- |V(BR) 2

1405

28

Breakover Voltage Temp. Coefficient

Breakover Currents

C Ambient

Typ.

32

Max.

36

Units

Volts

%/C

200

juamp

3.8

Volts

0.1

Silicon

Asymmetrical

AC

ST4

Trigger

The ST4

is an asymmetrical AC trigger integrated circuit for use in triac phase

controls.
This device greatly reduces the snap-on effects that are present in symmetrical trigger

and minimizes control

circuits
single

circuit hysteresis. This performance is possible with a

time constant, whereas a symmetrical circuit of comparable performance

RC

would require
The ST4

is

at least three additional passive

available in a

components.

two leaded T098 type

in-line

epoxy package.

FEATURES
Reduces

HysteresisFree Control

PERFORMANCE

MAX.

MIN,

.170

265

4 32

019
.205

4.19

5.21

.155

2 79
2.41

3.94
2.67

14

1.40

*,b;

.016

*D

.165

-110

095

Qz

.055

.075

.080

.115

.031

.094

1
i

406

.105

.045
.500

.055

MILLIMETERS
MAX.

MIN.

A typical

INCHES

SYMBOL

Low Switching Current (80/xA)

Wide Range of Control
Low Cost Packaging

Complexity
(Minimum Parts Count)
Circuit

6.73
.463

12.70

'

1.40

(.90

2.03
794

2.92
2.38

NOTE

triac phase-control circuit

is

shown

in figure

|: LEAD DIAMETER
IS CONTROLLED IN THE
ZONE BETWEEN 070 AND 250 PROM THE SEATING
PLANE BETWEEN 250 AND END OF LEAD A MAX
OF .021 IS HELD.

along with the symmetrical

trigger characteristics.
Its

main disadvantage

is

the snap-on hysteresis exhibited in figure 2.

PERCENT
POWE*

AA
V/V7

APPLIED
TO LOAD

DECREASING R

[load!

/'>

LINE

VOLTAGE

vT

CAPACITOR
VOLTAGE
-V T

[A
) \Vy A\/
1/

''O.

/
"

/ Jf

s
"SNAP ON
HYSTERESC

I\

TRIGGER
CHARACTERISTICS
1.

TURN

50

\f

LOAD

Figure

100

IC

75

50

PERCENT

Typical triac phase-control circuit with hysteresis.

25
R

Figure 2. Typical waveforms illustrating hysteresis effect.

Using a lamp dimmer as an example, the light "snaps on" to moderate brightness, although a gradual increase in brightness is
both expected and desired. During each half-cycle of AC voltage, the capacitor C is charged through the resistor R and while
the trigger is not firing, the capacitor voltage lags line voltage by approximately 90. However, once the trigger device fires,
the capacitor voltage drops as

discharged into the triac gate. During the next half-cycle, the capacitor voltage will

it. is

exceed the breakover voltage sooner since

transfer function of figure 2.

from

now

lower voltage. This action results in a large step in the

This snap-on effect can be eliminated with additional circuit components, usually 2 resistors and
it

started charging

a capacitor.

LOAD VOLTAGE

DECREASING R
LINE

VOLTAGE

CAPACITOR

VOLTAGE

-V T L

ASYMMETRICAL SWITCH
TRIGGER CIRCUIT WAVEFORMS

PHASE CONTROL
CIRCUIT

Figure 3. Typical triac phase-control circuit with an asymmetrical switch.

superior and

that

when

more economical way

the device triggers for the

to eliminate this hysteresis

first

75

50

PERCENT R

Figure 4. Hysteresis-free, cost-optimized, circuit performance.

is

to use the

time, the triggering voltage

ST4

on the next

trigger device.

half-cycle

is

The ST4

is

constructed such

equal to the original breakover

voltage plus the voltage decrease due to the capacitor .discharge into the triac gate. This allows the capacitor voltage
to maintain the same time relationship with line voltage and thus the same firing angle. These concepts
are shown graphically in
figures 3 and 4.

Further discussion of hysteresis, device operation, and light dimming can be found
1.

GE SCR Manual,

chapters 7

Incandescent Lighting Control

& 9.

2.

in:

200.35 Using the Triac for the Control of AC Power.

1406

3.-200.53 Solid State

absolute

maximum

ratings:

(25c)

TEMPERATURE

CURRENT
I 21

Continuous

I 21

Pulsed

(PW =

1, 2

Pulsed

temperature range

-55Cto+125C

500 ma

Storage temperature range

-55Cto+150C

ma

Lead temperature (during

soldering) at distance >

2jus,

Duty Cycle < 10%)

(PW=2,us,

Duty Cycle < 10%)

175

POWER

1/16

350

Total Average*
*Derate power 3.5

mW/T above

ST4

Operating junction

200 ma

mW

ins.

case for

(1.59
sec.

mm)

from

max.

260C

25C

electrical characteristics:

(25c)

Symbol

Test

Switching Voltage

S1

V S2
Switching Current

Min.

Max.

Units

14

18

Volts

Volts

80
160

Isi IS2

Isi> ^S2

V F1
V F2

Voltage Drop

Off-State Current

I 21

T.C.

Switching Voltage

MA
ma

T A =-55C

Volts

I 21

nA
nA

V 12
V 21

.05

%/C

Tj = -55C to
+ 125C

/isec

See Circuit

/usee

See Circuit 2

Volts

See Circuit 3

12

= 10 Volts
= 5 Volts

*-on

Turn-off Time

^off

Output Pulse

Circuit

mA
mA

1.6

Temperature Coefficient

Turn-on Time

= 100
= 100

10

Volts

100
100

12

Test Conditions

30
3.5

Turn-on Time, t on

vA

t on
.

12 (high side)
21 (low side)

Circuit 3

Circuit 2

Peak Pulse Amplitude,

Turn-off Time, t off

t off

12 (high side)

V A = 20V
V B = 5V

t off

21 (low side)

V A = -12V
V B = -12V

(Both Directions)

I0K

*Wv

O.UF
u
!^

1(;

I
TURN OFF

TEST:

R-)

= R 2 = 50C-J2

ADJUSTED TO POINT WHERE

TURN-OFF JUST OCCURS
C-1

Tl

^ff = (Bl + 2' C 1

1407

5K

VW

If
\\

24V
RMS

...

60Hz

-/Cr

Vne

FIGURE 5. ST4 ELECTRICAL

CHARACTERISTICS

|4fi

1.0

o.i L

CAPACITANCE-^ FAR ADS

FIGURE

6.

CAPACITIVE DISCHARGE ENERGY

(PER PULSE) VS.

CAPACITANCE (TYPICAL)

1.6

1.5

1.4

N^

S2

13

isi\^
1.2

1.

1.0

9
.8

7
6
.5

.4

^isi

V IS2

.2

-3 5

-1!

2
A

>

MBIENT

>

6!

8!

10 5

12 5

14 5

rEMPERA TURE-'C

FIGURE 7. SWITCHING CURRENT VARIATION

WITH TEMPERATURE (TYPICAL)
10

OHMS

R" 100

R" 50

vt
*-

OHMS

u 6

>

>

o
>

R.

OH MS

L_LJ
1

1.0

CAPACITANCE -^F

GU E
UTPUT PULSE
^L LOAD RESISTANCE AND E,TH ER DIRECTION) AS A FUNCTION
OF
CHARGING CAPACITANCE (TYPICAL)
,

1408

A A?

<

ST4

LOAD

\\

S-

1
110

ii

VAC

v3

tjTRIAC

'

^ w\
\

\*

\
\

% \

'o

-ft

\'(T

\ *

00
R IN

FIGURE

9.

250

300

KILOHMS

OUTPUT POWER TO LOAD VS. CONTROL

RESISTOR VALUE (25C)

USE THE ST4 ASYMMETRICAL AC TRIGGER WITH A TRIAC SELECTED

FROM

GE'S

COMPREHENSIVE

LINE.

GE Type

Specification Sheet No.

3A
6A
6A

SC35/36
SC40/41
SC240/241

175.24

6/10A

SC141/146

175.15

10A

SC4S/46

175.26

10A

SC245/246

175.17

15A

SC50/51

175.27

15A

SC2S0/251

175.18

25A

SC60/61

175.21

Current Rating

175.25

175.16

I
1409

Silicon

STB567 8.9

Diodes
STABISTORS

These low-cost General Electric Stabistors are multi-pellet diodes which have a tightly
controlled conductance at I F
10mA. They consist of 2, 3, or 4 planar passivated epitaxial diode pellets in series, mounted in a subminiature double-heatsink package. The

STB567, STB568, and STB569 are examples of such diodes with 2, 3, and 4 pellets
respectively. These diodes can be used as low voltage regulator diodes or to maintain a
bias on the output transistor of push-pull amplifiers. Multi-Pellet Stabistors maintain

LINEAR

temperature response (in millivolts per degree C) over the ambient tempera-55C to + 175C. Nominal change in voltage for the STB567, STB568,
and STB569 is 4m V, 6m V, and 8mV respectively for each degree C change in ambient
temperature.
ture range of

maximum

absolute

ratings:

(25C)

(unless otherwise specified)

Voltage

Reverse (continuous)

12

volts

ALL DIMENSIONS
INCHES

IN

STB567

Power

Dissipation

400

mW

(Derate: 2.67 mW/C for Ambient Temperature

above 25 C)

-032 BEF.

Dlfl.J

DIMENSIONS
INCHES

L
IN

STBS68
Temperature

Operating

-65

to

+175

Storage

-65

to

+200

Lead

(Xt

T
.032

Hi inch from

300

HEF

DIA.J

_L

ALL DIMENSION
INCHES

case for 10 sec)

IN

STB569
t.

ALL DIMENSIONS ARE

UNLESS TOLERANCED

electrical characteristics:

(25C)

IN

INCHES AND ARE REFERENCE

(unless otherwise specified)

STB567

STBS68

STBS69

Min.

Max.

Min.

Max.

Min.

1.31

1.61

2.09

2.31

2.72

Max.

Forward Voltage*
If

= 10mA

3.01

Volts

Breakdown Voltage
Ib

5^A

12

12

'Forward Voltage Tolerances:

STB567

1.46

STB568

2.20

STB569

10%

5%
2.87 5%
1410

12

Volts

Press Pak

[SERIES 1000

Mounting Clamp
800 LBS.
3.52

KN

CLAMP FORCE

Electric Company now offers the Series lOOO, Press Pak, Mounting
GE Press Pak's.
designed to facilitate single or double-side cooling of the

The General

Clamp

Special features of this clamp:

Hardened Steel pivot insuring constant pressure in rugged applications

over long periods.

One-piece phenolic insulator gives added 1/2" creep distance.
Use of special Force Indicator Gauge eliminates need for torque
wrenches, inaccurate "flex" gauges, and guesswork.

Various bolt lengths available to accommodate most mounting situations.

No loose parts to complicate assembly.
Stiffening brace to reinforce heat sink available upon request.
Single-side cooling terminal available

upon

request.

Positive, non-binding swivel action.

TABLE DIMENSIONS
I

MM

INCHES
DIM. MIN.

2.115

MAX.

MIN.

MAX.

2.135

53.72

54.23
75.31

OUTLINE DRAWING

2.935

2.965

74.54

.865

.885

21.97

22.48

.855

20.95

21.72

.730

.770

18.54

19.56

.460

.480

11.68

12.19

.735

.765

18.66

19.43

.735

.765

18.66

19.43

2.710

2.790

68.83

70.87

2.177

2.197

55.30

55.79

.605

.645

15.37

16.37

.380

.392

9.66

9.95

3.480

3.520

88.40

89.40

.090

.095

2.29

2.40

.125

.135

3.18

3.42

.025

.035

.64

.88

.980

1.020

24.90

25.90

D
E
F

.825

Ht

SINGLE SIDE
TERMINAL

ID

Tv* tck P Me .1.0UU be u*d .hen the moun.tog .b of

4.

Minimum

heatsink

web

tl,e

he.tsink

i,

no. .ufflclentlyMcklo prevent ft.

pressure.
thickness should be 5/16" to insure positive

1411

he.Mnk ton, bending .hen the

SERIES 1000

MOUNTING PROCEDURE
With the semiconductor positively located in place on
the heatsink(s)
(refer to Note 1 of Table I), place the clamp
in position with the bolts
through the holes in the heatsink(s), and proceed as follows:
1. Refer to Device Specification Sheet
for Preparation of Mounting

To

Calibrate Force Gauge:

If the gauge

suspected of being out of calibration due to wear or

on a flat surface as shown below.

is

damage, check

it

Surface.

Tighten the nuts evenly until finger tight.

Tighten each bolt !4 turn, using a 7/16 socket wrench on the bolt

2.
3.

4.

heads.
Place the Force Indicator Gauge firmly against the
springs, as
shown on the Outline Drawing, so that both ends and the middle
are in solid contact with the springs. The holes of
the gauge will
then indicate the spring deflection, or force; correct mounting
force is indicated when the holes coincide.

,*.OK>

Examples:

Holes Lined

Less then rated force.

Tighten nuts alternately
V* turn at a time until
points coincide.

Correct force.

Up

TRUE FLAT SURFACE

10R STRAIGHT EDGE)

Excessive force. Loosen

nuts and
start over.

NEVER

try

//////tf////?/y////7/////*

to adjust

spring force by backing

off the nuts, spring friction will produce false
readings.

Always

the points are not 0.300

the bottom contact points.

start

If

at Step 1.

.010

apart, calibrate the gauge

by

ORDERING INSTRUCTIONS
In order to select the proper clamp for a given application,
it is necessary to
I he correct force necessary to mount the

semiconductor device.
The length of the bolts necessary to span dimension "Z".

know

three

The capability of the sink to withstand the mounting force without bending
Knowing these parameters, the proper clamp may be selected from
Table II

TABLE
GE

Device

Type (4)

# Springs

II

Recommended

Clamp
Force

A390, A396

3.1-4.0 (KIM)

of Table

I)

Bolt Length

(inches)

(inches)

C355, C358

C380, C385

Note

Allowable "Z"' 1 ' Dimension

C350, C354
(Lb.)

(refer to

- CLAMP SELECTION CHART

Mounting Force

700-900

mounting parameters-

700-900 (Lb.]
3.1-4.0 (KN)

.800-1.175

2.00

.900-1.425

2.25

1.150-1.675

2.50

1.250-1.925

2.75

1.500-2.175

3.00

Phenolic temperature beyond 125C and spring temperature above 1 10C is not
permissible.
heatsink web thickness should be 5/16" to insure positive pressure.

Minimum
1.

2.
3.

4.

Refer to Outline Drawing and to Note 3 of Table I for determination of "Z"

dimension.
a brace is required, add suffix "B" to the order number, e.g. HW1
000G10 IB.
If a terminal is required (used with single side cooling),
add the letter "T" to the order number,
All group numbers or bolt lengths can be used with any device
types.
If

1412

e.g.

HW10O0G101BT

Order Number' 2 - 3 *

HW1000G101
HW1000G102
HW1000G103
HW1000G104
HW1000G105

filing

Press Pak

SERIES 2500"1

Mounting Clamp
2500 LBS.
11

KN

CLAMP FORCE
I

Electric Company now offers the Series 2500, Press Pak, mounting clamp
designed to facilitate single-, or double-side cooling of all GE Press Pak's.

The General

Special features of this clamp:

in rugged applications over long periods.
One-piece phenolic insulator gives 1" nominal creep distance.
Use of special Force Indicator Gauge eliminates need for torque wrenches,
accurate "flex" gauges, and guesswork.

Metal pivot insuring constant pressure

in-

Various bolt lengths available to accommodate most mounting situations.

No loose parts to complicate assembly.
Stiffening brace to reinforce heat sink available upon request.
Single-side cooling terminal available

upon

request.

Positive, non-binding swivel action.

OUTLINE DRAWING
INCHES
MAX.

DIM.

MIN.

3.095

3.105

MM
MIN.
78.6

C
D

1.230

1.270

.680

.700

25.4

1.000

31.2

17.28

32.2
17.77

25.4

1.000

G
H

79.0

114.5

4.520

MAX.

100.0

103.1

3.940

4.060

.850

.860

21.60

.110

.140

2.80

3.55

2.177

2.197

55.30

55.79
16.37

21.83

.605

.645

15.37

.380

.392

9.66

9.95

3.480

3.520

88.40

89.40

.090

.095

2.29

2.40

.125

.135

3.18

3.42

.025

.035

.64

.88

1.230

1.270

31.25

32.25

^L-

BRACE

Gj

SINGLE SJDE
TERMINAL

p *l kThe backup brace should be used when the mounting web of the heatsink is not sufficiently thick to prevent the heatsink from bending when the
clamp is tightened. Extruded aluminum heatsinks with mounting webs less than 3/8" thick require this brace in order to withstand the full 2500
lbs. mounting force. Refer to MOUNTING PROCEDURE for complete mounting instructions.
Heatsink A: Drill .890, + .020, - .000 holes on 3.1" .010 centers. -Countersink holes approx. .015 x 45 on clamp insulator side.
Heatsink B: Drill .437 .005 holes on 3.100 .010 centers.
When a brace is used, the "Z" dimension includes the one inch thickness of the brace. Refer to Table 11 for selection of the proper bolt length.
The semiconductor device to be mounted must be positively located in the center of the clamp. A 1/8" diameter by 1/4" long grooved or spring

NOTES:
1.

2.

3.

4.

pin

is

recommended

for locating the device: Use a No. 30 drill (0.1285" diameter) for the hole in the heatsink.

1413

SERIES 2500

MOUNTING PROCEDURE
With the semiconductor positively located in place on the heatsink(s)
(refer to Note 4 of Table 1), place the clamp in position with
the bolts
through the holes in the heatsink(s), and proceed as follows:
1. Refer to Device Specification Sheet for Preparation of Mounting

To

Calibrate Force Gauge:

gauge is suspected of being out of calibration due to wear or

damage, check it on a flat surface as shown below.
If the

Surface.
2.
3.

Tighten the nuts evenly until finger tight.

Tighten bolts 2*4 turns each, using a 9/16 socket wrench on the
bolt heads.
Place the Force Indicator Gauge firmly against the springs, as
shown on the Outline Drawing, so that both ends and the middle
are in solid contact with the springs. The upper points of the
gauge will then indicate the spring deflection, or force; correct
mounting force is indicated when the points coincide.

-*j

|+-

t010
0.300

Examples:
Points Lined

Less than rated force.

Tighten nuts alternately
1/4 turn at a time until

Correct force.

Up

TRUE FLAT SURFACE

(OR STRAIGHT EDGE)

Excessive force. Loosen

nuts and start over.

NEVER

////////////7/;;/;;y/;//77?

try to adjust
spring force by backing
off the nuts, spring fric-

points coincide.

produce
Always

tion will
readings.

false
If

start

at Step. 1.

the points are not 0.300 + .010 apart, calibrate the gauge by filing
bottom contact points.

the

ORDERING INSTRUCTIONS
In order to select the proper clamp for a given application, it is necessary to
The correct force necessary to mount the semiconductor device.
The length of the bolts necessary to span dimension "Z".

know

three mounting parameters:

The capability cf the sink to withstand the mounting force without bending
Knowing these parameters, the proper clamp may be selected from Table II.

TABLE
GE

Device
Type' 4 *

C387, C388

II

1.

3.

4.

of Table

I).

Recommended

Clamp

Mounting Force

Allowable "Z"' 1 Dimension

Bolt Length

Force

(inches)

(inches)

'

2000-2500
8.9

(Lbs.)

-11.0 (KN)

2200-2400
9.8

1.375-2.125

3.50

1.875-2.625

4.00

(Lbs.)

10.6 (KN)

Phenolic temperature beyond 125C and spring temperature above

2.

Note

- CLAMP SELECTION CHART

C397, C398

C395
C50O Family
A500 Family

(refer to

10C

2.375-3.125

4.50

3.375-4.125

5.50

5.375-6.125

7.50

is

Order Number' 2 ' 3 '

not permissable.

Refer to Outline Drawing and to Note 3 of Table I for determination of "Z"

dimension.
brace is required, add suffix "B" to the order number, e.g. HW2S00G72B.
If a terminal is required (used with a single side cooling), add
the letter "T" to the order number,
AU group numbers or bolt lengths can be used with any device types.
If a

I
1414

e.g.

HW2500G72BT.

HW2500G77
HW2500G78
HW2500G79
HW2500G82
HW2500G83

TYPE

Germanium

Tunnel Diodes

TD-9

The General Electric TD-9 is a Germanium Tunnel Diode offering a peak current of 500 fia. This device,
which makes use of the quantum mechanical tunneling phenomenon to obtain a negative conductance
characteristic, is designed for converter, small signal, low level switching and logic applications.
This device is housed in General Electrics new hermetically sealed subminiature axial package.

ABSOLUTE MAXIMUM RATINGS

Forward Current*

IT

Reverse Current*

2.5 ma
5

Storage Temperature T Tf
Lead Temperature
1/16"

AXIAL DIODE OUTLINE

ma

+ 1/32" from case for

ZJQ

E3CZ

-55C to +100C

260C

10 sec

Derate maximum currents 1%/ C above 25 C

ELECTRICAL CHARACTERISTICS; (25C)

Min

Typ

Max

450

500

550

/ja

Valley Point Current

60

100

pa

Peak Point Voltage

65

mv

350

mv

500

mv

Static Characteristics

Peak Point Current

Valley Point Voltage

Forward Voltage
(I -I

FP

Typ)

Reverse Voltage
Typ)
(I =I
R p
Dynamic Characteristics

40

20

RP

Units

nh

Total Series Inductance

L_

0.5

Total Series Resistance

2.5

6.0

ohm

Valley Point Capacitance

2.5

5.0

pf

Max. Terminal Neg. Cond.

-G

Resistive Cutoff Freq.

xlO

ro

_3

EQUIVALENT CIRCUIT
(BIASED

mho

2.5

kmc

4.5

kmc

fLECTHOOC

Self Resonant Freq.

IN

NEGATIVE

CONDUCTANCE REGION)

TUNNEL DIODE SYMBOL

Frequency of Oscillation

fro

2nc

kmc

4.5

fxo =

LsC 1

"

Rs

|g'|

1415

v)
"\~C~V

fosc

LsC

(*-)

Germanium

TYPE

TD261.A

TD271.A

TD262.A

TD272,A

TD263AB

TD273,A B

TD264.A

TD274,A

TD265,A

TD275,A

TD266.A

TD276.A

Diodes

The General Electric TD261.A through TD266A series of tunnel diodes are extremely fast, P-Type
germanium devices with peak currents of 2.2, 4.7, 10, 22, 50 and 100 ma. Among the unusual
features offered by these tunnel diodes are high Ip/Iy ratios and C/Ip ratios as low as 0.025 pf/ma.
v

New

manufacturing techniques provide a high temperature tunnel diode capable of 100C storage
and operation resulting in high reliability performance. Types TD271.A through TD276.A are

microwave package which has electrical characteristics of the TD260 line with a
inductance of .15 mh. Specially selected units offering parameter variations or tighter
control are also available.
built in a special
series

absolute

maximum

ratings: (25C)
TD261
TD262 TD263 TD264
TD261A TD262A TD263A TD264A
TD271
TD272 TD263B TD274
TD271A TD272A TD273 TD274A
TD273A
TD273B

Maximum Power

Dissipation

3.5

1.5

Operating and Storage Temperature

TD265
TD265A
TD275
TD275A

TD266
TD266A
TD276
TD276A

18

35

7.5

-55 to +100C

Lead Temperature
1/16" 1/32" from case for 10 seconds
*Derate

maximum

forward current

1% per C

230
for ambients in excess of 25C.

electrical characteristics: (25 C)

COLOR DOT # *
3ROWIS

BROWN/GRAY

RED

TD261A
TD271A

TD262
TD272

TD261
TD271
Peak Point Current

_
I
I

RED/GRAY
TD262A
TD272A

Min

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

2.0

2.2

2.4

2.0

2.2

2.4

4.2

4.7

5.2

4.2

4.7

5.2

ma

Ip

Valley Point Current

Iv

.20

.31

.22

.31

.45

.60

.45

.60

ma

Peak Point Voltage

70

100

80

110

80

110

90

120

mv

Valley Point Voltage

VP
vv

Forward Voltage
(i F = i )
P
(I F = .25 I P )

v FP *
v fs

390

540
500

500
420

390

650

500
420

580
500

390

650

500
435

560
510

mv

400
650

500
435

575
530

650

mv
mv

Total Series Inductance

TD260
TD270

Ls
LS

1.5

1.5

1.5

1.5

.15

.15

.15

.15

nh
nh

Total Series Resistance

Rs

3.5

4.0

ohm

Valley Point Terminal

Capacitance

cv

Rise

Time

v**

Max V F p on TD270 devices is 675 mv

**TD270 series marked with white cathode dot

"Switching

1.8

speed with constant current drive,

3.0

0.65

430

160

only
t,

Ip

-vp r V

141B

1.0

2.8

320

6.0

0.65

74

1.0

pf
Psec

TD261,A -

TD271,A - 76.A

66,

TD273,B

TD263,B

(25C)

electrical characteristics:

COLOR DOT**

ORANGE

ORANGE/GRAY

ORANGE/
WHITE

YELLOW

YELLOW/GRAY

TD263A
TD273A

TD263B
TD273B

TD264
TD274

TD264A
TD274A

TD263
TD273
Peak Point Current

Ip

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

9.0

10

11

9.0

10

11

9.0

10

11

20

Typ.

22

24

ma

2.7

3.1

ma

115

100

130

mv

0.9

1.4

0.9

1.4

0.9

1.4

Peak Point Voltage

vP
vv

75

100

80

110

90

120

90

Forward Voltage
(I

F=

500
450

V FP *

(If = Ip)

Vfs

.25 Ip)

560
510

550
450

650

570
530

520
450

650

600
540

670

500

580
520

650

610
540

550
460

Total Series Inductance

TD260
TD270
Total Series Resistance
Valley Point Terminal
Capacitance
Rise

Time

mv

425

425

420

Max.

24

iv

410

20

Typ.

3.1

Valley Point Current

400

Min.

22
2.7

Valley Point Voltage

Max.

mv
mv

680

1.5

1.5

1.5

1.5

.15

.15

.15

nh
nh

.15

.15

2.0

2.5

1.8

2.0

ohm

Rs

1.7

cv
**#*

6.5

Ls
Ls

1.5

1.2

5.0

3.5

9.0

4.0

Pf
Psec

64

185

68

190

350

2.5

18

7.0

2.0

electrical characteristics: (25C)

COLOR DOT**

GREEN

GREEN/GRAY

BLUE

BLUE/GRAY

TD265
TD275

TD265A
TD275A

TD266
TD276

TD266A
TD276A

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

45

50

55

45

50

55

90

100

110

90

100

110

ma

Peak Point Current

Ip

8.5

6.0

8.5

12.0

17.5

17.5

ma

Iv

6.0

12.0

Valley Point Current

110

180

130

200

150

210

260

mv

Valley Point Voltage

VP
Vv

180

Peak Point Voltage

Forward Voltage
(I F = Ip)
(i F = .25 I P )

V FP
vFs

520

625

550
480

700

530

640
550

750

520

Total Series Inductance

Ls

TD260
TD270

1.5

1.5

.15

nh
nh

1.1

1.2

ohi

.15

Rs

1.4

1.5

Valley Point Terminal

Capacitance

Cy

8.5

3.0

25

MAX

.060

MAX

Pf
Pse

DIMENSIONS WITHIN JEDEC OUTLINE 00-20

j022

MAX

018 MIX

3C

6.0

22

57

DIMENSIONS WITHIN JEOCC OUTLINE 00-18

DOT MDKATES Ip CATHODE

4.0

35

10.0

5.0

35

100

If

mv
mv

800

.15

Ls

***

680
550

550
500

1.5

Total Series Resistance

tr

720

650
530

1.5

.15

RiseTime

mv

450

450

425

425

LZ3C
*-;

'

Vfp

it 1

v vf MAX

ALL DIMENSIONS M INCHES AND ARE

REFERENCE UNLESS TOLERANCED
VIOLET DOT INDICATES TD260 CATHOOE END

MAX.

cfe
HasAJC_1__

r^
I

-|h>

OK

.099 MAX.

TD270 SERIES

H17

.0025

WMTE CATHODE INDICATOR

UNLESS
ALL DIMENSIONS ARE IN INCHES ANO REFERENCE
TOLERANCED

IrMAX

TD260 SERIES

"*

SERIES

Metal Oxide Varistors

RATINGS OF 130-1200 VOLTS D.C.,
95-1000 VOLTS RMS, 1-160 JOULES

Description:

GE-MOV

zinc oxide varistors are voltage dependent,

symmetrical resistors which perform in a manner similar to
back-to-back zener diodes in circuit protective functions

and offer advantages

in

performance and economics.

When exposed to high energy voltage transients, the varistor

impedance changes from a very high standby value to a very
low conducting vaiue thus clamping the transient voltage to
The dangerous energy of the incoming high
voltage pulse is absorbed by the GE-MOV varistor, thus
a safe level.

1-4

JOULES

protecting your voltage sensitive circuit components.

Replacement For:

Zener Diodes

Silicon Carbide

Selenium Thyrectors

R-C Networks (non dv/dt)

Features:

Excellent Clamping
High Transient Current Capability (4000 Amperes)
Nanosecond Response
High Energy Capability

Wide Operating Temperature Range

Low Temperature Coefficient
Low Standby Drain

Compact and Lightweight

l-V Oscillograph
(Actual Photo)

Model Number Nomenclature:

^^

130

LA

10

GENERAL ELECTRIC
RMS
PRODUCT
PULSE
GE-MOV
APPLIED SERIES
ENERGY
VARISTOR
VOLTAGE
RATING (JOULES)

SELECTION
(A or B)

Benefits:

Improves Circuit, Component and System Reliability

Extends Contact Life

Reduction of Lightning Effects

Maximum

Electrical Ratings:

Maximum

Energy, Power and Peak Current

Storage Temperature,

Promotes System Cost Reduction

Reduces System Size and Weight Requirements
Increases Product Safety
No Follow-On Current

See

T STG

Rat^g j abie

-40C to +125C

Operating Surface Temperature, T s

Operating Ambient Temperature (Without Derating)
Maximum Voltage Temperature Coefficient

115C

85 c
_

05%/C

Mechanical Ratings:
Insulation Resistance

Hipot Encapsulation

- Megohms
- Volts D.C.

>
for

Minute

Severability

Per Mil Std 202

1418

iqqq
2500

E Method 208O

SERIES L

CHARACTERISTICS

MAXIMUM RATINGS
STEADY STATE

MODEL

MODEL
NUMBER(6)

SIZE

V95LA7_

(2)

(3)

AVERAGE
POWER

APPLIED

PEAK IDLE

VOLTAGE

VOLTAGE

VOLTAGE

VOLTS

VOLTS

VOLTS

134

(3)

V150LA10_
V150LA20

V250LA20_
V250LA40_

AMPS

VOLTS

VOLTS

130

0.45

2000

134

191

1250

175

0.24

400

184

273

250

175

150

212

200

150

212

200

250

354

330

2
2

250

354

330

275

389

375

275

389

369

300

424

405

0.5

2000
4000

184

254

0.85

1000
1900

0.24

400

212

301

150

2
10

0.5

282

0.85

2000
4000

212

20

800
1600

0.28

400

354

509

110

2000
2000
4000

354

472

500
500
1000

400

389

579

100

2000
2000
4000

389

522

450
450
900

400

420

607

90

4
0.6

20
40

0.9

0.28

4
0.6
0.6
0.9

15

V300LA2
V300LA4
V320LA15A

10

20

15

V275LA20
V275LA40_

PICOFARADS

V275LA2
V275LA4
V275LA15A

-1MHz

WATTS

V250LA2
V250LA4
V250LA15A

/=.1

JOULES

184

TYPICAL
CAPACITANCE

MAX

130

(5)

MIN

V150LA1
V150LA2

VARISTOR PEAK
VOLTAGE @ 1mA
AC PEAK

CURRENT

184

ENERGY

peak' 4 '
PULSE

DISSIPATION

130

V130LA10
V130LA20

TRANSIENT
DC
APPLIED

RMS

95

V130LA1
V130LA2

RECURRENT

(1)

20
40
2

0.28

15

V320LA20
V320LA40
V420LB20_
V420LB40

0.6
0.6
0.9

2000
2000
4000

462

635

380
380
750

V460LB20

V460LB40_
V480LB20A
V480LB40
V480LB80
V510LB20A
V510LB40
V510LB80
V550LB20A
V550LB40_
V550LB80_
V575LB20A
V575LB40_

V575LB80
V1000LB80

320

452

420

20
40

420

595

560

20
40

0.6
0.9

2000
4000

610

800

300
600

460

650

615

20
40

0.6
0.9

640

878

270
540

480

679

640

20
40
80

0.6
0.7

670

914

1.0

2000
4000
2000
2000
4000

260
260
520

0.6
0.7
1.0

2000
2000
4000

735

970

240
240
470

2000
2000
4000

775

1060

230
230
450

2000
2000
4000

805

1115

2000
4000

1425

2
3

2
3

510

721

675

20
40
80

550

778

700

20
40
80

0.6
0.7

730

20
40
80

0.7

80

0.9

160

1.3

2
2
3

2
2
3

2
2

V1000LB160.

575

1000

813

1414

1200

1.0

0.8
1.1

when no transients are present.

(1) Steady State defined as the normal input conditions existing
(21 Relative size only (See "Dimensions Table").
nonsinusoidal wave input is present,
(3) Sinusoidal voltage assumed as normal input conditions. If
(4) See Figure

215
215

425
130

1900

260
,

peak voltage input values should be used to select model.

18,19,20.

(5)

1mA standby

current based

(6)

(-) indicates

(AorB)

upon 60Hz

sinusoidal input.

selection. See Figure 1-15.

t419

MAXIMUM VOLT-AMPERE CHARACTERISTICS

3000

10

PEAK AMPERES

FIGURE

PEAK AMPERES

FIGURE 2

3000

MODEL
NUMBER

SELECTION

VI30LAIQ_
VI30LA20_

\s"

1/
1/

U^

000
800

<

400

^^l-ZOB300
200

I00

10

I
1

100

100

PEAK AMPERES

FIGURE

FIGURE 4

3000

SELECTION

MODEL
NUMBER

2000

V250LAI5_
V250LA20_
V250LA40-

Is*

1^

1/
1/

1000

^^~-

800
600

^"''"^'o, OR

400
300

200

10

ioo L

1000

.0

PEAK AMPERES

FIGURE

IC>

P EAK AMPE:re

FIG URE 6
1420

10

100

MAXIMUM VOLT-AMPERE CHARACTERISTICS

3000

MODEL
NUMBER

2000

3
o

V275LAI5_
V275LA20_
V275LA40_

SELECTION
A

l^

\S
\y

\s
i/
o-'

iooo

> 800

20B

f^=^40B

300

100
10

100

1000

FIGURE

MODEL
NUMBER
6000 V420LB20_
V420LB40_

FIGURE

^~
A

|V
\S

1/
\y

10

PEAK AMPERES

PEAK AMPERES

MODEL
NUMBER
6000 V460LB20V460LB40-

1/
\y

1/
1/

,4000
1-

a/

*
< 2000

"

gj3000

>

-^

< 2000

0.

*^^

S
s

^^^""3 OB

UJ

2 OB^

20B,,

Q.

^^40B

<

<

S 800
600

.01

~n~
.01

10

10

100

IOOO

PEAK AMPERES

PEAK AMPERES

FIGURE 10

FIGURE 9

MODEL
NUMBER
6000

6000

V5I0LB20V5I0LB40-

4000

\^
\^
\^

1/
Ay

^3000
>
OB^
UJ
Q.

^^"^"8 OB

3
Z
x
<

IOOO

E 800

I
1

10

IOOO

FIGURE

10

PEAK AMPERES

PEAK AMPERES

FIGURE 12

11

1421

ioo

MAXIMUM VOLT-AMPERE CHARACTERISTICS

10

io

PEAK AMPERES

PEAK AMPERES

FIGURE 13

FIGURE 14

PEAK AMPERES

I00

io

PEAK CURRENT -AMPERES

FIGURE 16

FIGURE 15

TYPICAL STATIC RESISTANCE VS.

PEAK CURRENT

IO

u
SO
_
UJ

^f >r

.1

>

o:

Wj

.01

004

-SEE DIME:nsicINS
TABLE

"

.C)l

*Y

II

.1

10

100

60

PEAK CURRENT -AMPERES

FIGURE 17

TYPICAL DYNAMIC IMPEDANCE

VS.

70

TEMPERATURE

FIGURE 18

PEAK CURRENT
1422

80
*C

POWER AND ENERGY RATING

TEMPERATURE

VS.

PULSE LIFETIME RATINGS

SERIES L

500

or

100

UJ

MODEL

SI.IE

PEAK

mm)

(7

CURRENT

| 50
<
l-

z
uj

10

tr
a:
=>

-10

"-^

-10*

\\V

I0

0"

\ ^10=
^-

IU

RISE TIME50

500
1000
LENGTH OF PULSE TAIL - ^iSEC

100

5000

10,000

PULSE TAIL LEH6TM

FIGURE 19

5000

a:

1000

NOTES:
1.

End of lifetime is defined as a degradation failure which

occurs when the device exhibits a shift in the varistor
voltage at one (1) milliampere in excess of + 10% of the
of a
initial value. This type of failure is normally a result
decreasing V, value, but does not prevent the device from
continuing to function. However, the varistor will no
longer meet the original specifications.

I00

500

5000

I000

LENGTH OF PULSE TAIL

10,000

^SEC

FIGURE 20

I
50

100

500

1000

LENGTH OF PULSE TAIL

5000

10,000

- /J.SEC

FIGURE 21
1423

DIMENSIONS TABLE

SERIES L

MODEL
NUMBER

MARKING

MAXIMUM

(1. 2)

VI 30 LAI

1301
1302
1501
1502

.46

V130LA2
V150LA1
V150LA2
2502
V250LA2
2504
V250LA4
V275LA2
2752
V275LA4
2754
V300LA2
3002
V300LA4
3004
OUTLINE DRAWING SIZE

MAXIMUM

MM

INCHES

11.7

MAXIMUM

MM

INCHES
.34

INCHES

8.7

MM

MAXIMUM

MINIMUM
INCHES

MM

INCHES

MM

.20

5.0

.07

1.9

.12

3.1

.21

5.3

.08

2.1

.13

3.3

.27

6.9

.12

3.2

.19

4.9

.29

7.4

.14

3.5

.22

5.5

.30

7.7

.15

3.8

.23

5.7

1.000 (MIN)-

25.4mm

LI

DATE CODE

0.310

(MAX)|

7.88mm

*
0.027"(MAX)-J

\*-

0.68mm
SEATING PLANE

"* e l|*-

DIMENSIONS TABLE
MODEL
NUMBER

MARKING
(1,2)

MAXIMUM
INCHES

MM

.74

18.9

V95LA7
V95LA7 _
V130LA10
V130LA10_
V150LA10
V150LA10_
V250LA15
V250LA15_
V250LA20
V250LA20 _
V275LA15
V275LA15_
V275LA20
V275LA20_
V320LA15
V320LA15_
V320LA20
V320LA20 _
V420LB20
V420LB20 _
V460LB20
V460LB20 _
V480LB20
V480LB20
V480LB40
V480LB40
V510LB20
V510LB20.
V510LB40
V51 0LB4O
V550LB20
V550LB20 _
V550LB40
V550LB40 _
V575LB20
V575LB20
V575LB40
V575LB40.
V1000LB80
V1000LB80.
OUTLINE DRAWING SIZE 2

'LA"

MAXIMUM
INCHES
.65

MM
16.4

SEATING PLANE

~~

(-) A or B

(2>

U eV
or the

(3)

Drawings are not to scale.

Lead dimensions as measured within 0.05 inches
(1.3mm) of seating plane. 1424

(4)

Ss GE

marked

"*"

deSlgnati n aS

MM

MINIMUM
INCHES

MM

MAXIMUM
INCHES

^^

P ' US 2

dlgit date

MM

.17

4.4

.07

1.7

.11

2.7

.21

5.3

.08

2.1

.14

3.5

.26

6.7

.13

3.4

.20

5.0

.29

7.3

.14

3.7

.22

5.5

.32

8.2

.16

4.2

.25

6.4

.41

10.3

.21

5.4

.33

8.5

.475

10.7

.23

5.9

.35

.44

11.1

.25

6.4

.36

9.2

.46

11.6

.26

6.7

.38

9.6

.49

12.4

.27

6.9

.41

10.5

.72

18.4

.46

11.7

.65

16.5

-SEATING PLANE

CONFIGURATION

(1)

selection.

MAXIMUM
INCHES

"LB" CONFIGURATION

Code and either the general Electric monogram

..

'

SERIES L

DIMENSIONS TABLE

MARKING

MODEL
NUMBER

(1,2)

V130LA20
V150LA20
V250LA40
V275LA40
V320LA40
V420LB40
V460LB40
V480LB80
V510LB80
V550LB80
V575LB80
V1000LB160

V130LA20_

_
V250LA40 _
V275LA40 _
V320LA40 _
V420LB40 _
V460LB40 _

MAXIMUM

MAXIMUM

INCHES

MM

INCHES

MM

1.00

25.5

.89

22.5

MINIMUM

MAXIMUM
INCHES

MM

INCHES

MM

MAXIMUM
INCHES

MM

.21

5.3

.08

2.1

.14

3.5

.29

7.3

.14

3.5

.22

5.6

.32

8.2

.17

4.4

.26

6.5

.41

10.4

.22

5.5

.34

8.7

.44

11.1

.24

6.0

.37

9.4

.49

12.4

.27

6.8

.42

10.7

.73

18.6

.47

12.0

.67

16.9

VI 50LA20

27.9

0.95

24.1

V480LB80
V510LB8CL
V550LB80
V575LB80
V1000LB160_.

OUTLINE DRAWING SIZE

-A

1.10

I.OOO"(MIN)-

25.4mm
DATE CODE
0.310"(MAX)

7.88mm
0.034"(MAX)

0.86mm

SEATING PLANE

SEATING PLANE
LB"

LA" CONFIGURATION

(2)

AuSSeTar^tobe
ials

GE.

CONFIGURATION

either the General Electric

with part designation as indicated, plus a 2-digit date code and

Monogram

or the

fait-

Drawings are not to scale.

inches (1.3mm) of seating plane.
(4) Lead dimensions as measured within 0.05
(3)

1425

c
Metal Oxide Varistors
|

33-430 VOLTS D.C. NOMINAL VARISTOR VOLTAGE

RATINGS OF 23-365 VOLTS D.C, 18-264 VOLTS RMS..1-.7
JOULES

SERIES
MA

Description:

GE-MOV

zinc oxide varistors are voltage

dependent,
symmetrical resistors which perform in a manner
similar to
back-to-back zener diodes in circuit protective
functions
and offer advantages in performance and
economics.

MA

SVMBOL

MILLIMETERS
MIN.
MAX.
1

79

PD

43

3.6B

B.OI

850

3.

INCHES
J
[

WIN.

83

MAX.
033
145

.375
1.

03

The

(molded

axial) series

varistor voltage following

is

characterized at the

10% EIA

ImADC

values as are zener

diodes and other varistors used as transient

suppressors.
to high energy voltage transients, the
varistor

When exposed

impedance changes from a very high standby

value to a
very low conducting value thus clamping
the transient voltage to a safe level. The dangerous energy
of the incoming
high voltage pulse is absorbed by the
thus protecting your voltage sensitive

GE-MOV
circuit

varistor,

components.

Features:

Low Capacitance
Low Standby Drain

Excellent Clamping
Peak Transient Current Capability Up To 20
Amps
Wide Operating Temperature Range (-40C to
125C)
Low Temperature Coefficient (-.03%/C)

Compact and Lightweight

Compatible With Automatic Insertion

l-V Oscillograph
(Actual Photo)

Benefits:

Replacement For The Following When Used As

Improves Circuit, Component and System Reliability

Extends Contact Life
Reduction of Secondary Lightning Effects

Transient Suppressors:

Promotes System Cost Reduction

Reduces System Size and Weight Requirements

Zener Diodes

Silicon Carbide

Selenium Thyrectors

Increases Product Safety

R-C Networks (non dv/dt)

No Follow-On

Neon Bulbs

Reduces Electrical "Spike" Noise

Miniature Electronic Crowbars

Current

Applications:

Telephone Relays

Computer Equipment

Telephone Solid State Circuits

Railroad Circuitry

Television

Communication Equipment

Numerical Control

Copier Machines

Relay Coils

Solid State Security Systems

Test

Calculators

Medical Equipment

Contact Arc Suppression

Fire

Traffic Controllers

Equipment

Instrumentation

1426

Solid State

Motor Control

Solid State Relays/Timers

Automobiles

Alarms

SERIES
Example:

Model Number Nomenclature:

220

MA

imADC
-or

series

GE-MOV

(0-1

JOULES)

iteady

state

peak)

fall

198

varistors are characterized at the

- V220MA4B;

'20VDC, 10%,

VDC

at

(A or B)

RATING

varistor voltage according to

example

V- 1 Characteristics:

SELECTION

PULSE

ENERGY

(VDC)

MA

V220MA4B

4 B

PRODUCT
v NOM
GENERAL
FAMILY
ELECTRIC NOMINAL
GE-MOV VARISTOR
VARISTOR VOLTAGE

The

MA

EIA

values.

the nominal varistor voltage

ImADC. The maximum

applied voltages,

191

VDC

is

A - Maximum allowable steady

allowable

and

195

VAC

B -

below the low side nominal varistor voltage of

(220 - 10%) to insure the maximum idle power

state

DC applied voltage.

See Ratings Table.

Maximum allowable steady state recurrent peak applied voltage.
See Ratings Table.

v NOM -

Nominal Varistor voltage

at

ImADC.

See Characteristics Table.

lissipation characteristics (See V-I curve to the right).

ABSOLUTE MAXIMUM RATINGS

i/laximum Electrical Ratings:

^fo^^Sj!
C to +125 C

Maximum Energy, Power and Peak Current

itorage Temperature, T STG

-55

J~
C

Dperating Ambient Temperature (Without Derating)

Maximum Voltage Temperature Coefficient

'*

-.03%/

Mechanical Ratings:
Insulation Resistance

Hipot Encapsulation

Megohms
- Volts D.C.

>
for

Minute

Per Mil Std

Solderability

o.oi

.1

.1

202E Method 20 8C

PEAK CURRENT- AMPERES

PEAK CURRENT -AMPERES

FIGURE

1000
1000

FIGURE

TYPICAL CHARACTERISTIC OF DYNAMIC

IMPEDANCE VS. PEAK CURRENT

1427

MAXIMUM STATIC RESISTANCE

CURRENT

VS.

PEAK

SERIES

MA
MAXIMUM RATINGS TABLE
STEADY STATE
RMS

DC

MODEL
NUMBER

APPLIED

APPLIED

VOLTAGE

(2,4)

VOLTAGE
50-60 Hz

VOLTS

V33MA1A
V33MA1B

(2,3,4)

AC

VOLTS

23
26

(1)

TRANSIENT
RECURRENT

PEAK APPLIED
VOLTAGE (2,3,4)

ENERGY

DISSIPATION

VOLTS

18
20

26
28

JOULES

MILLIWATTS
(FREE AIR)

22

31

.16

31

25

35

.18

V47MA2A
V47MA2B

34
38

27
30

38
42

.21

V56MA2A
V56MA2B

40
45

32
35

45
49

.25

V68MA3A
V68MA3B

48
56

38
40

54

.26

57

.30

V82MA3A
V82MA3B

60
66

45
50

65

.33

71

.37

V100MA4A
V100MA4B

72

57
60

80

.40

81

85

.45

V120MA1A
V120MA2B

97

72

101

75

102
106

.20

121

88
92

124
130

105
110

148
156

.30

.40

10

200

10

200

10

200

10

200

10

200

10

200

10

.10

V180MA1A
V180MA3B

152

V220MA2A
V220MA4B

191

132
138

187
195

V270MA2A
V270MA4B

224
235

163
171

230
242

V330MA2A
V330MA5B

257
274

188
200

266

.25

283

.50

V390MA3A
V390MA6B

322
334

234
242

331
342

.60

349

253
264

358

.35

373

.70

365

200

.23

127

AMPERES

.19

V150MA1A
V150MA2B

V430MA3A
V430MA7B

NON-RECURRENT
PEAK PULSE
CURRENT (4, 5)

.13
.15

28

181

(4)

(WATT-SECS)

V39MA2A
V39MA2B

144

AVERAGE
POWER

(4)

10

200

20

.10

10

200

.20

20

.15

10

200

20

.20

10

200

20

.20

10

200

.40

20
10

200

20

.30

10

200

20
10

200

20
|

(1)
(2>

Steady State defined as the normal input conditions existing when

no transients are present.
e

hi

T "T^ '^^ When

7,"
included in the value for Applied
Ann ,^ v
Voltage used to select the correct model.
or more.)

faffi tattT^fo?

iT""

" tranSient

(i.e.,

is present
applications for 117

(4)

C aPPlff"? 118 a sin usoidal Applied Voltage is assumed to be the normal input condition.
d
Peak
Applied Voltage values should be used to select correct model.
See Figure 3.

(5)

See Figure

(3)

V\

If

H * h Une voh *Zs conditions should be

V RMS should use ratings of 129 Vrms
km a

,'

"

Applied Voltage
g

is

non-sinusoidal.
sinusoidal, Recurrent
J

8.

1428

SERIES

CHARACTERISTICS TABLE

MA

CHARACTERISTICS AT 25C
v NOM
VARISTOR

MODEL
NUMBER

LEAKAGE
CURRENT
MAX. RATED
DC VOLTAGE

VOLTAGE
@ 1.0mA
MAX.
TYP.
DC CURRENT (6)
VOLTS tTOL. % MICROAMPERES

ALPHA
l

2 = 1mA,

MIN.

MAXIMUM

(7)

0.1mA

\i

TYP.

V33MA1A
V33MA1B
V39MA2A
V39MA2B
V47MA2A
V47MA2B
V56MA2A
V56MA2B
V68MA3A
V68MA3B
V82MA3A
V82MA3B
V100MA4A
V100MA4B
V120MA1A
V120MA2B
V150MA1A
V150MA2B
V180MA1A
V180MA3B
V220MA2A
V220MA4B
V270MA2A
V270MA4B
V330MA2A
V330MA5B
V390MA3A
V390MA6B
V430MA3A
V430MA7B
(6)

1mA DC

(7)

20
10

33

10

250

20

12

55

20
39

TYPICAL
CAPACITANCE

AC IDLE
POWER

RESISTANCE

MILLIWATTS

c/w

PICOFARADS

250

300

BODY TO
AIR

MAX.

MAXIMUM
THERMAL

250

11

210

13

180

15

150

18

120

10

47

20
10

56

20
10

>

25

16

20

68

10

20

82

10

20

100

20

100

25

32

22

40

25

32

30

27

40

21

45

17

55

14

65

12

'

10
15
10

120

15

150

10
15

180

10
15

220

10
15

270

10
15

330

10
15

390

10
15

430

'

>

i'

70

"

11

10

current pulse, 10-50 msec.

= KVoc where <x= Log i 2 /ij

Log

V 2 /V 2

NOTE:

GE-MOV varistor may be operated at maximum energy,

power, peak pulse current, and applied voltage (AC or DC) ratings
up to 75C ambient. Above 75C ambient these values must be
derated in order to remain below a limit of 125C average surface
temperature. The magnitude of total average power dissipation is
determined by averaging the energy of repetitive transients over
their time base (0.1 Watt = 0.1 Joules/Sec) and then adding the
The

idle

power

dissipation of the varistor.

70
80
90
100
AMBIENT TEMPERATURE - C

FIGURE 3 % RATED POWER, ENERGY, PEAK PULSE

CURRENT AND APPLIED VOLTAGE
1429
(AC OR DC) VS T A

130

SERIES

MAXIMUM VOLT - AMPERE CHARACTERISTICS

MA

300

(TA = 25C)

300

Vi20MW^

200
::

VlOOMAAft,

V8ZJJ!V/68M* 2100

^56M0

80

V42UJ

2A;

V3]*

^3M^-

60
50

40
.01

.01

PEAK VARISTOR CURRENT - AMPERES

.5

.1

FIGURE

05

FIGURE

|=

-%

-Ss>/
\>ss
A
*G

10
-ft-

*)

W-P1IL sf *iriT

*i

W=]

^4

<o

PEAK CURREN T

.001

.01

1.0

PULSE WIDTH -MILLISECONDS

FIGURE

% RATED NON-RECURRENT PEAK PULSE

CURRENT VS. PULSE WIDTH (TA = 25C)
1430

AMPERES

.5

AMPERES

AMPERES

PEAK VARISTOR CURRENT - AMPERES

%mt-

.1

PEAK VARISTOR CURRENT

FIGURE 6 PEAK VARISTOR CURRENT - AMPERES

...

.5

PEAK VARISTOR CURRENT

PEAK VARISTOR CURRENT - AMPERES

50

.1

PEAK VARISTOR CURRENT

FIGURE 4 PEAK VARISTOR CURRENT - AMPERES

05

05

SERIES

MA

GE-MOV VARISTOR APPLICATIONS

"^#

CONTACT ARCING

NOISE

Switch contacts interrupting an inductive load current will

arc causing deterioration of the contacts and noise-generating "spikes"

Placing an

or contacts

on the power

MA
is

Series

line.

GE-MOV

varistor across the load

method

to suppress high voltage

a low-cost

voltages) to
spikes, and (particularly at lower currents or
contact damage due to arcing. Their bi-directional

reduce

characteristic

makes them useful

for

AC

or

DC

applica-

tions without affecting load operation or suffering voltage

damage themselves, as diodes or capacitors may do.

RESIDENTIAL POWER LINE TRANSIENT VOLTAGES

About 2% of all homes experience repeated transient volt1200 volts) of a level potentially damaging to

ages (over

home

appliances.

GE-MOV

a reliable, cost-effective

way

axial-leaded varistors provide

to reduce these voltages to

acceptable levels.

GE-MOV VARISTOR APPLICATION NOTES AND SPECIFICATION SHEETS

TITLE

PUB. NO.

200.73

GE-MOV
Using GE-MOV Varistors To
Testing GE-MOV Varistors

200.77

Detecting

201.28

Energy Dissipation In

660.30

Six

200.60
200.72

660.32

451.133

Varistors Voltage Transient Suppressors

And

Extend Contact Life

Suppressing Nanosecond Wide Spikes With

GE-MOV

Ways To Control Voltage

Transient Suppression

GE-MOV

Varistors

Varistors For Various Pulse Shapes

Transients, Reprint

From

Electronic Design

Don't Make The Cure Worse Than The Disease, Reprint From Machine Design

Transient Voltage Suppression Manual

1431

SERIES
PA

Metal Oxide Varistors

RATINGS OF

170-750

VOLTS

D.C., 130-575

VOLTS RMS.

Description:

GE-MOV zinc oxide varistors are voltage dependent,

symmetrical resistors which perform in a manner similar to'
back-to-back zener diodes in circuit protective functions
and offers advantages in performance and economics.
When

exposed to high energy voltage transients, the varistor impedence changes from a very high standby valve to
a very
low conducting valve thus clamping the transient voltage
to a safe level. The energy of the incoming
high voltage
pulse is absorbed by the GE-MOV varistor, thus
protecting sensitive circuit

components.

Replacement For:

Zener Diodes

Silicon Carbide

Selenium Thyrectors

R-C Networks (non dv/dt)

IV

Features:

Up

NEMA

to

Oscillograph (Actual Photo)

Benefits:
1

5 Watt Average

Power Dissipation

Creep and Strike Distances

Excellent Clamping (as low as 1.7 @ 200 amps.)
Discharge Current Capability as high as 4000 amps.
Energy Dissipation up to 80 watt-seconds

Nanosecond Response
Low Standby Power Dissipation
Quick Connect Terminal

Improves Circuit, Component and System Reliability

Extends Contact Life

Reduction of Lightning Effects

Promotes System Cost Reduction

Reduces System Size and Weight Requirements

Increases Product Safety

No Follow-On

Current

Model Number Nomenclature:

V130PA10A

I
GENERAL
ELECTRIC

GE-MOV

MAXIMUM AC
VOLTAGE

SERIES

(RMS)

STYLE

PULSE

ENERGY

RATING

RATING

VARISTOR
1432

(JOULES)

SELECTION
(A,

or C)

SERIES PA
latings:

Maximum

See Rating Table

Energy, Power and Peak Current

Storage Temperature,

Maximum Hot

40C

Tstg

Spot Temperature,

to +125

TH s

Operating Case Temperature (without derating)

Maximum Thermal Impedance Case to Ambient for

Maximum Thermal Impedance Case to Ambient

Maximum Voltage Temperature Coefficient

for

125C
70C

-.

Maximum Recurrent Peak AC

Maximum DC Input

< 8^/Watt
< 5 C/Watt

Voltage

-0.05%/

/lechanical:

Insulating Resistance

Hipot Encapsulation

>

um

mi

uv,

1000

45 Grams

MAXIMUM RATINGS AND CHARACTERISTICS

RATINGS
RMS

MODEL
NUMBER 5

V130PA10(-)

1
'

APPLIED

VOLTAGE
HZ
VOLTS

50-60

RECURRENT
PEAK
APPLIED

VOLTAGE
VOLTS

DC

APPLIED

AVERAGE
POWER

VOLTAGE

ENERGY

DISSIPATION

VOLTS

JOULES

WATTS

130

184

170

150

212

195

20(-)

10

20

15

10

20(-)

20

15

V250PA10(-)

10

V150PA10{-)

20H

250

354

330

40(-)

V275PA10(-)
20(-)
40(-)

V320PA40

(-)

V420PA20

(-)

40(-)

V460PA20

(-)

275

389

360

V510PA20

V550PA20

V575PA20

1.

2.

5.

VOLTS

4000
4000

185

255

4000
4000

214

298

4000
4000
4000

358

480

10

20
40

4000
4000

13

4000

523

595

540

20
40

420

4000
4000

585

802

10

460

650

600

20
40

4000
4000

648

880

10

679

625

20
40
80

4000
4000
4000

680

918

480

510

721

655

550

778

720

575

813

750

10

4000
4000

20
40
80

10

20

40

4000
4000

80

4000

20
40
80

4000
4000
4000

3
5

6.8

3.6

7.8

7.8

4.2

601

3.6

13.7

390

448

6.8

4.2

4000

HOT SPOT
TO CASE
C
C/WATT

13.7

12

(-)

40(-)
80(-)

AMPERES

MAX.
VOLTS

40

(-)

40(-)
80(-)

@1MA AC
MIN.

415

(-)

40(-)
80(-)

CURRENT

452

(-)

40(-)
80(-)

13

320

40(-)

V480PA20

20
40

PEAK

CHARACTERISTICS
THERMAL
VARIS TOR
RESISTANCE
PEAK V0 LTAGE

4.5

11.0
5.5

11.0
5.5

18.3

11.0
5.5

18.3

713

962

11.0
5.5

18.3

782

1072

11.0
6.1

18.3

816

1119

11.0
6.1

conditions must be
terminals when no transient is present. High line voltage
Applied voltage is that voltage which appears across the varistor
model.
included in the value for applied voltage used to select the correct
non-sinusoidal, recurrent
assumed to be the normal input condition. If applied voltage is
For AC applications, a sinusoidal applied voltage is
model.
peak applied voltage values should be used to select correct

See Figure 12.

See Figure 13. Peak currents apply for full rated bias.
(-) indicates A, B or C selection. See Figures 1-11.

1433

SERIES PA

300C

2000

MAXIMUM VOLT-AMPERE CHARACTERISTICS

MODEL
NUMBER

SELECTION

V130PAI0

1/
l^ l^ IV

VI30PA20

CO
!j

1000

> 800
-A =

2 600
0.

Z
3 400

B^

*c-

2
200

100
.C"

'

100

10

'

100

PEAK AMPERES

FIGURE
3000
2000

MODEL
NUMBER

SELECTION

V250PAI0

U^
\S
\S l^ \^

V250PA20
V250PA40
!j

10

PEAK AMPERES

FIGURE

A,

iooo

"c^

2 600

s
3 400

< 300
s
200

100
.0

IC

PE:ak

10

I00<

=IG URE 3

MODEL

2000

FIGURE 4

MODEL
NUMBER

1^

CO
!j

B^

IOOO

co

> 800

^3000
>

2 600

<2000

0_

UJ
Cl

=>

SEt FrTinw

_A| B
C
V420PA20 1/
V420P* 40 1/ l^ l^

A,

lOOt

SEl-ECT ON
A
B
c

V320PA 40

100

PEAK AMPERES

3000

10

ampe REE

400

g 300

x IOOO

I 800
200

600

400
.c

1
1

IC)

10

IOC

P EAK AMPEires

300
1

IC

P EAK

FIG URE 5

FIG

1434

AMPE:res

URE

10

ioo


MAXIMUM VOLT-AMPERE CHARACTERISTICS

SERIES PA

SELECTION

MODEL
NUMBER

V480PA20
V480PA40
V480PA80

U-"

1/
1/ 1/ 1/

w 4000
l-

'3000

^3000

-A;,

<2000

< 2000

"c
1000

800

S 800

1000

600
400

400

300

300

PEAK AMPERES

PEAK AMPERES

FIGURE

MODEL
NUMBER

SELECTION

V5I0PA20
V5I0PA40

\S

FIGURE 8

U-"

U^

4000

1000

100

10

10

4000

1/ 1/

<o
J

^3000

3000

A,

>

4 2000

<2000

B^

a.

"C

5
<

x 1000
2 800

1000

600

300
01

K)0

101

1000

10

PEAK AMPERES

EAK AMP ERE S

FIGURE 10

FIC JURE 9

100

90

80

70

z
n

io

I000

|
&

40

8
S

20

30

io
'

-40

PEAK AMPERES

FIGURE

50

/'

40

50

60

70

80

90

MAXIMUM CASE TEMP

100

110

120

130

(C)

FIGURE 12

11

1435

ENERGY AND POWER RATING

VS.

CASE TEMPERATURE

SERIES PA

nno

*v<

inn

^O^
inn
*

^^v^^^*"

50
>^0s

in

20

sn

mo

sno

iooo

LENGTH OF PULSE TAIL

5000

10,000

- /iSEC

0.I

100

10

I.0

PEAK CURRENT-AMPERES

FIGURE 13

FIGURE 14

PULSE LIFE DERATING CURVE

DYNAMIC IMPEDANCE

PEAK CURRENT

VS.

0-

rTf

L SEATING
(T

PLANE

1000

500
CD

INCHES

SYMBOL

O
>

NOM.

MIN.

a.

MILLIMETERS

MAX

.57

.26

NOM.

MIN.

b3

6.6
4.1

.13

3.2

.51

.26

6.5

oc

2.61

66.2

a.

0D,

<
UJ
a.

.44

.30

.03

UJ

o
z

H2
H3

CO
CO
UJ

.96

1.12

24.6

28.3

1.29

26.3

32.6

1.99

2.00

|0

8.1

.24

5.8

2.01

50.6

6.0

50.8

.76

T
0T
0.1

25.5

23.2

.32

S
CO

.9

1.03

.22

I-

7.7

.04
1.01

4>P

33.5
11.2

.91

12.9

1.32

CO

NOTES

14.3

.16

en

MAX

51.0

19.2
.04

.11

1.0

2.8

I00

.13

3.2

PEAK CURRENT-AMPERES

FIGURE 15
TYPICAL RESISTANCE

PEAK CURRENT

NOTES:
VS.

Tab

designed to

fit

2.

Case temperature

is

3.

H, (130-150
H 2 (250-320
H 3 (420-575

is

4. Electrical

1436

V RMS
V RMS
V RMS

/4" quick connect terminal.

measured

at

T c on

top surface of base plate.

devices)
devices)
devices)

connection: top terminal and base plate.

FIGURE 16
DIMENSION TABLE

SERIES PA~|
TYPICAL NON-ISOLATED MOUNTING

PROPER MOUNTING OF THE "PA" SERIES VARISTOR

applying the varistor in a manner which requires high
dissipation capability, the possibility of necessary
heat sinking should be taken into consideration. Figure 12
allows one to determine the maximum power dissipation
for a given case temperature. To determine if a varistor has
been properly heat sinked, a measurement of strap temper-

When

power

Tc , (see outline drawing) should be made under

quired worst case power and thermal conditions.
ature,

4>

-HHO-32 PAN HEAD

SCREW

J-J

re-

*IO FLAT WASHER

VARISTOR

THERMAL GREASE
LAYER
MOUNTING SURFACE
LOCKWASHER
#10-32 NUT

describe the proper heat sink for any application, a

fundamental knowledge of heat transference is required.

To

Heat generated by power dissipated in the varistor, will

flow through the mounting junction, to the heat sink, and
finally to the surrounding ambient. The varistor case temperature (Tc ) is a function of both the heat sink temperature (T s) and the ambient temperature (TA ) which are
directly proportional to the amount of heat flow (P) from
the junction and the thermal resistances of the mounting
a nd the heat sink (^sa)- Figure 17 shows a

FIGURE 18

TYPICAL ISOLATED MOUNTING

(Rflcs)

thermal schematic of a mounted varistor.

#6-32

X 3/4 LG.

SCREW

o Ts

#6 FLAT WASHER
PHENOLIC SHOULDER

WASHER
SPACER
VARISTOR
MICA INSULATOR

FIGURE 17

MOUNTING SURFACE

EQUIVALENT THERMAL RESISTANCE

NETWORK FOR A POWER VARISTOR

LOCKWASHER
#6-32 NUT

The relationship between power dissipated (P), or heat

and temperature may be expressed as:
Tc ~ Ta
=R0cs + R0sa

flow,

FIGURE 19
NOTE:
1

Table

lists

some

typical values for

R0 CS

for various
2

TABLE

TYPICAL

MOUNTING DESCRIPTION

( a>

Screws

(>)

Screws ( b )

(a)

(b)

4, 340, or

640 Thermal

Rflcs*

10-32 Screw Torqued to 12-15 in

405 in
6-32 Screw Torqued to

x 3.1" x .005"

(1)

MICA

(2)

#6-32 x 3/4" screw.

insulation l"

(2)

#6

(2)

Phenolic shoulder washer.

flat

(2)

#6

(2)

#6-32 nut.

2.0 C/Watt

(1)

1/4" quick connect terminal.

(1 )

Spacer

1.0 C/Watt

thick.

washer.

0.3 C/Watt

0.9 C/Watt

With Thermal Grease

With Insulation Kit
With Insulation Kit and
Thermal Grease Both Faces

Isolation kits containing the following parts can be or-

dered by part #A7811055.

EXPECTED Rflcs FOR

VARISTOR POWER PACKAGE
GE-MOV
FOR

Screws

G623, Dow Corning, DC3,

is recommended.

Grease

mounting methods. 1

Screws

GE

internal tooth lock washer.

lbs.

lbs.

Values given in the table are for devices mounted on a clean, flat
be
heatsink. The surface under the varistor contact surface should
to within .001 in. per inch with a surface finish of 63 microinches or smoother. Surfaces must be free of burrs, holes, paint or
other foreign material and should be cleaned just prior to varistor
mounting. Rough, curved or bent heatsink surfaces will cause indevice
creased thermal resistance and may result in premature

flat

failure.
!
,

refer
For further information on heatsinking and values of R0sA>
Considerto Application Note #200.55 Handling and Thermal

ations for General Electric

Power

Devices.

1437

SERIES

Metal Oxide Varistors

18- 180 VOLTS D.C.

RATINGS OF 14-153 VOLTS

NOMINAL VARISTOR VOLTAGE

D.C., 20-115 VOLTS

RMS,

1-15

ZA

JOULES

Description:

GE-MOV

zinc oxide varistors are voltage dependent,

symmetrical resistors which perform in a manner similar to
back-to-back zener diodes in circuit protective functions

and offer advantages

ZA

in

performance and economics. The

series is characterized at the

following

10%

EI A

ImADC

varistor voltage

values as are zener diodes and

other varistors used as transient suppressors. When exposed

to high energy voltage transients, the varistor impedance

changes from a very high standby value to a very low

conducting value thus clamping the transient voltage to a
safe

level.

The dangerous energy of the incoming high

is absorbed by the GE-MOV
varistor, thus

voltage pulse

protecting your voltage sensitive circuit components.

Replacement For:

Zener Diodes

Silicon Carbide

Selenium Thyrectors

R-C Networks (non dv/dt)

l-V

Oscillograph

(Actual Photo)

Features:

Low

Benefits:

Voltage Design

Improves Circuit, Component and System Reliability

Extends Contact Life
Reduction of Lightning Effects
Promotes System Cost Reduction
Reduces System Size and Weight Requirements
Increases Product Safety
No Follow-On Current

Excellent Clamping
High Transient Current Capability (2000 Amps)
Nanosecond Response
High Energy Capability

Wide Operating Temperature Range

Low Temperature Coefficient
Low Standby Drain
Compact and Lightweight

Applications:

Telephone Relays
Telephone Solid State Circuits
Communication Equipment
Relay Coils
Traffic Controllers

Computer Equipment
Railroad Circuitry

Numerical Control
Test Equipment

Instrumentation

Contact Arc Suppression

1438

Solid State

Motor Control

Television

Copier Machines
Calculators

Solid State Relays/Timers

Power Supplies
Solid State Security Systems'

Medical Equipment
Fire

Alarms

SERIES ZA
iximum Electrical Ratings:
iximum Energy, Power and Peak Current

See Rating Table

-40C to+125C

Drage Temperature, Tgxc-

Temperature, T
jerating Ambient Temperature (without derating)
iximum Voltage Temperature Coefficient

115C
85C

>erating Surface

-0.05%/C

schanical Ratings:

>

sulation Resistance Megohms

pot Encapsulation-Volts D.C. for

Minute

V33ZA5

Number Nomenclature:

33

V NO M NOMINAL
VARISTOR VOLTAGE

-MOV

(VDC)

PRODUCT

PULSE

SERIES

ENERGY
RATING
(JOULES)

S.RISTOR

e
i

Typical V-l Characteristics:

ZA

.ECTRIC

ENERAL

202C Method 208C

Per Mil Std

>lderability

)del

1000
2500

ZA series GE-MOV
ImADC varistor voltage

varistors are characterized at

according to

RETMA

values,

example-V33ZA5: The nominal varistor voltage is

ir
VDC, 10%, at ImADC. The maximum allowable steady
ite applied voltages, 26VDC and 28V AC (peak) fall below
e low side nominal varistor voltage of

)%)

to

insure

laracteristics are

the

maximum

idle

29.7VDC(33VDCpower

dissipation

A-Maximum
B-Maximum

not exceeded.

allowable steady state

DC applied voltage.

See Ratings Table.

allowable steady state recurrent peak applied voltage.

See Ratings Table.

VNOM-Nom'inal

Varistor voltage at

10

ImADC. See

TTTT

Characteristics Table.

111

/lIYIOICIU

40 TO 85 C

-4-

i
o
<

o
>
<
s
s
o

-4-

VI0(3ZA3

"XL VI00ZAI5
_

a LOWER ^_

--fl
1

"11

VI20ZAI

o
>

8f

Zj

HIGHER1

a.

T-

HIGHER

a.

to

uj.OI

.001
I

FIGURE

10

100

.I

PEAK CURRENT- AMPERES

1

100

10

PEAK CURRENT- AMPERES

TYPICAL CHARACTERISTIC OF DYNAMIC

IMPEDANCE VS. PEAK CURRENT

FIGURE

1439

MAXIMUM RESISTANCE
PEAK CURRENT

VS.

SERIES ZA

MAXIMUM RATINGS
STEADY STATE

DC

MODEL
NUMBER

RMS

APPLIED

VOLTAGE

(2,3,4 )

RECURRENT

PEAK APPLIEE
VOLTAGE
VOLTAGE
APPLIED

(1,2,4)

50-60 Hz A(

(2,3,4)

VOLTS

VOLTS

VOLTS

ENERGY
(4)

V120ZA1
V120ZA6
V150ZA1
V150ZA8
V180ZA1
V180ZA10

AVERAGE
POWER

PULSE

DISSIPATION

CURRENT

(4)

JOULES
(WATT-SECS)

V18ZA1
V18ZA3
V22ZA1
V22ZA3
V24ZA1
V24ZA4
V27ZA1
V27ZA4
V33ZA1
V33ZA5
V39ZA1
V39ZA6
V47ZA1
V47ZA7
V56ZA2
V56ZA8
V68ZA2
V68ZA10
V82ZA2
V82ZA12
V100ZA3
V100ZA15

CHARACTERISTICS

TRANSIENT

(1)

WATTS

PEAK

V NOM
VARISTO R VOLTAGE

@1 .OmA
DCCUF tRENT(5)

TYPICAL
CAPACITANCE

(6)

AMPS

VOLTS

TOL.

14

10

14

0.5

.18

250

18

14

10

14

3.0

.40

1000

18

18

14

19

0.6

.18

250

22

18

14

19

3.0

.40

1000

22

24

20

15

21

0.8

.18

250

20

15

21

4.0

.40

1000

24

22

17

24

0.8

.18

250

27

22

17

24

4.0

.40

1000

27

26

20

28

1.0

.19

250

33

26

20

28

5.0

.40

1000

33

31

25

35

1.2

.20

250

39

31

25

35

6.0

.45

1000

39

38

30

42

1.4

.21

250

47

38

30

42

7.0

.45

1000

47

45

35

49

1.7

.22

250

56

45

35

49

8.0

.45

1000

56

56

40

57

2.0

.24

250

68

56

57

10.0

.50

1000

68

66

40
50

71

2.5

.25

250

82

66

50

71

12.0

.50

1000

82

81

60

85

3.0

.26

250

100

1000

100

81

60

85

15.0

.55

102

75

106

1.0

.20

102

75

106

6.0

.45

127

95

134

1.2

.20

2000
500

150

127

95

134

8.0

.45

2000

150

153

115

163

1.5

.20

500

180

153

115

163

10.0

.45

2000

180

500

120
120

PICOFARADS

20%
20%

2500
12000

2000

10000

15%
15%
+ 10%
10%
+ 15%
15%
10%
+ 10%
10%
10%
10%
10%
+ 10%
10%
10%
10%
10%
+ 10%
10%
10%
+ 10%
10%
10%
10%
10%
+ 10%

1700

8500

1.

typical

2.

across the varistoi

1700

terminals

8500

transient

1400

Include high line

7000
1200

3.

applications a

5000

800

4000
700

3500
600

3000
500

2500
200
1200
170

1000

For

Voltage

1440

is

assumei

assumed to be the
normal input
condition. If

Applied Voltage
is

non-sinusoidal,

Recurrent Peak
Applied Voltage
values should be

used to select the

correct model.
4.

See Figure 11.

5.

1mA DC

current pulse, 20

msec min.
See Figures 7
thru 10.

6.

140

FIGURE 4

AC

sinusoidal Appliec

800

10

nc

conditions on

6000
1000

AMPERES

FIGURE 3

when

is preset]

selection.

10
1.0

Applied Voltag
that voltage

is

I
AMPERES

200 /iA

max.

MAXIMUM VOLT-AMPERE CHARACTERISTICS

1.0

Leakage curren

@ max DC rated
voltage = 20 HA

ioo

MAXIMUM VOLT-AMPERE CHARACTERISTICS

SERIES 2A

600
500

400

-^

300

v;iRO7AI0

"v750ZA8

o 200

V120ZA6

100

80
60
50

40

FIGURE

10

1.0

1000

10

1.0

PEAK AMPERES

PEAK AMPERES

FIGURE 6

PULSE LIFETIME RATINGS

1000

APPLICABLE MODELS:
VI8ZA3 TO V1("in7A1*>

|s^_

100

10

10'

^^OS^^^^/l

100

20

500

1000

5000

50

10,000

FIGURE

100

500

5000

1000

10,000

LENGTH OF PULSE TAIL - /iSEC

LENGTH OF PULSE TAIL - /SEC

FIGURE 8

2000

o:

0.5 L

20

50

500
1000
LENGTH OF PULSE TAIL - /iSEC

100

500

20

5000 10,000

50

100

500

FIGURE 10

FIGURE 9

1441

5000

1000

LENGTH OF PULSE TAIL -

/J.SEC

10,000

SERIES ZA
The maximum allowable operating ambient temperature
without derating is 85C if the average power of the input

AVERAGE
inn

o. a:

nn
DERATING CURVE IF AV ERAGE
POWER OF TRANSIENTS IS I00"
OF POWER DISSIPATION RATING x

uj

5z
<

fiO

u_ UJ
(9

40

SS

?o

transients

TRANSIENTS

./\

a:

on

\
>

>
1

-40

%A/

40 50 60
AMBIENT TEMPERATURE C
Figure 11.

80

70

>
100

90

satisfied

if

the voltage

the voltage transients are repetitive the allowable ambient

reduced according to the level of the average power input.
For example, if the average power of the transients is 50% of
the dissipation rating the maximum allowable ambient
temperature without derating is 70C. Then, for operation
above 70C the applied voltage and energy ratings are linearly
reduced to zero at 1 00C.
is

v
\

is

If

50% \

100%

zero. This condition

random and non repetitive. Above 85C the

applied voltage and energy ratings both are reduced.

v/

>

is

transients are

120

110

VOLTAGE AND ENERGY RATINGS VS. AMBIENT TEMPERATURE

AND AVERAGE POWER OF INPUT TRANSIENTS

I
V

ELECTRICAL

SYMBOL

MODEL
NUMBER
V13 2A1

V18ZA3
V22ZA1
V222A3
V242A1
V242A4
V27ZA1
V272A4
V332A1
V332A5
V392A1
V392A6
V472A1
V472A7
V562A2
V56ZA8
V682A2
V682A10
V822A2
V822A12
V1002A3
V1002A15
V1202A1
V120ZA6
V1502A1
V1502A8

V1802A1
V1802A10

MARKING

MAX.

MAX.

MAX.

IN

MM

IN

MM

IN

MM

18Z1

.461

11.7

.335

8.51

.158

4.0

.038 0.98

V18ZA3

.745

16.9

.636

16.15

.173

22Z1

.461

11.7

.335

8.51

.745

16.9

.636

.461

11.7

.745

18.9

V22ZA3
24Z1

V24ZA4
27Z1

lb

MIN.

MAX.

MM

MAX.

MIN.

IN

MM

IN

MM

IN

MM

.079

2.0

.023

.59

.027

.68

4.4

.043 1.09 |.079

2.0

.030

.77

.034

.86

.158

4.0

.038

0.98 .079

2.0

.023

.59

.027

.68

16.15

.173

4.4

.043

1.09

.079

2.0

.030

77

.034

.86

.315

8.51

.158

4.0

.038 0.98

.079

2.0

.023

.59

.027

.68

.636

16.15

.173

4.4

.043

1.09

.079

2.0

.030

.77

.034

.86

IN

.461

11.7

.335

8.51

.158

4.0

.038 0.98

.079

2.0

.023

.59

.027

.68

.745

18.9

.636

16.15

.197

5.0

.054

1.36

.099

2.5

.030

.77

.034

.86

.461

11.7

.335

8.51

.158

4.0

.038 0.98

.079

2.0

.023

.59

.027

.68

.745

18.9

.636

16.15

.197

5.0

.054

.099

2.5

.030

77

.034

.86

.461

11.7

.335

8.51

.178

4.5

.048

1.24

.099

2.5

.023

.59

.027

.68

.745

18.9

.636

16.15

.197

5.0

.054

1.36

.099

2.5

.030

77

.034

.86

.461

11.7

.335

8.51

.197

5.0

.059

1.50

.119

3.0

.023

.59

.027

.68

V47ZA7

.745

18.9

.636

16.15

.212

5.4

.065

1.63

.119

3.0

.030

.77

.034

.86

56Z2

.461

11.7

.335

8.51

.197

5.0

.059

1.50

.119

3.0

.023

59

.027

.68

V27ZA4
33Z1

V33ZA5
39Z1

V39ZA6
47Z1

1.36

V56ZA8

.745

18.9

.636

16.15

.237

6.0

.075

1.90 .138

3.5

.030

.77

.024

.68

68Z2

.461

11.7

.335

8.51

.217

5.5

.068

1.75

3.5

.023

.59

.027

.68

.034

.86

V68ZA10
82Z2

V82ZA12

.138

.745

18.9

.636

16.15

.251

6.4

.086 2.17

.158

4.0

.030

77

.461

11.7

.335

8.51

.237

6.0

.079 2.01

.158

4.0

.023

59

.027

.68

.745

18.9

.636

16.15

.275

7.0

097 2.44 .178

4.5

.030

77

.034

.86

100Z

.461

11.7

.335

8.51

.256

6.5

089 2.27 .178

4.5

.023

59

.027

V100ZA15

.68

.745

18.9

.636

16.15

.291

7.4

107 2.71

5.0

030

.77

.034

.86

.027

68

120Z

V120ZA6
150Z

V150ZA8
180Z

V180ZA10

.197

.461

11.7

.335

8.51

158

4.0

038 0.98

079

?,.o

023

.59

.745

18.9

.636

16.15

197

5.0

059 1.36

099

2.5

030

77

.034

.86

.461

11.7

.335

8.51

178

4.5

048 1.24

099

7,5

023

59

.027

68

16.15

197

5.0

054 1.36

099

2.5

030

77

034

.86

8.51

178

4.5

023

59

027

.68

030

.77

034

.86

.745
.461

.745

18.9
11.7

18.9

.636
.335

.636

16.15

212

1442

5.4

048 1.24

099

2.5

065

119

3.0

1.63

SERIES ZA

GE-MOV VARISTOR APPLICATIONS

ELECTRONIC SWITCHING OF INDUCTIVE LOADS

When an

inductive load

is

switched off by a transistor, a high

S.O.R. (Safe Operation Region) is required of the transistor

to prevent reverse-biased second breakdown. If a GE-MOV

connected from collector to emitter, the energy

stored in the inductor is no longer forced through the tranVaristor

sistor

is

but instead

is

Period of high S.O.R. requirement

Vc

transferred to the Varistor. This results

in a significant decrease in transistor stress

and a much more

reliable circuit operation.

Ud

Pfr

ELECTRONIC SWITCHING FOR REGULATION

Sudden application of supply voltage (or initial turn-on) can

damage a switch mode regulator switching device by subjecting it to the heavy current surge required to charge the uncharged

^rrr

CONTROL
CIRCUIT

capacitor.

filter

-e-n

-i

=a

Varistor can be used to shunt the initial surge

around the switching device, precharging the capacitor to a
safe value. The Varistor will not affect circuit operation at

A GE-MOV

times other than at

little

current at

manner, the

initial

a voltage of

GE-MOV

tion for a line

turn-on because

it

VIN - Vqut-

r
TI

draws extremely
Applied in this

Varistor can offer important protec^-i

operated power supply.

GE-MOV VARISTOR APPLICATION NOTES

TITLE

PUB. NO.
200.60
200.72
200.73
200.77
201.28

GE-MOV Varistors Voltage Transient Suppressors

Using GE-MOV Varistors to Extend Contact life
Testing GE-MOV Varistors
Detecting

& Suppressing Nanosecond Wide

Energy Dissipation in

GE-MOV

Spikes with

GE-MOV Varistors

Varistors for Various Pulse Shapes

660.32

to Control Voltage Transients, Reprint from Electronic Design

Don't Make The Cure Worse Than The Disease, Reprint from Machine Design
Transient Suppression

451.133

Transient Voltage Suppression Manual

660.30

Six

Ways

I
1443

Phase Control Power Modules

AC -DC Conversion

IB

OR 240V AC RMS
LINE OPERATION

120

PHASE CONTROL 25 AMP SERIES

DESCRIPTION
The General
isolated,

trolled

Power Module is a new concept of packpower semiconductor pellets in an electrically

Electric

aging individual

epoxy encapsulated package to perform phase concircuit

functions,

controlling

resistive

or inductive

loads.

FEATURES
bonded copper mountdown for low thermal
ance and mechanical integrity.

Direct

BENEFITS

resist-

GE-MOV

Varistor transient over-voltage protection

on

Lower

Epoxy encapsulated

shock and moisture.

Standard fast-on terminals.

costs achieved

Reduced inventory

Lower

by reduc

test

cost

costs.

achieved by testing

functional assembly.
I

Ease of Installation:

Customer provides
gating circuit and standard wiring.

T(AV) at 85C base

plate temperature T(
BP \.

initial

all

package (2500V Peak) terminals to base.

120V or 240V RMS line operation.

Maximum rated output of 25 amperes

Improved heat management.

Reduced circuit design costs

packaging costs.

base circuits.
Electrically isolated

and creep distances meet proposed NEMA Standard

(1/16/1972) and U.L. 508 for 240V AC RMS Operation.
Power-GlasTM passivated silicon pellets for high
reliability.
Strike

to provide resistance

from mechanical

Ease of maintenance.

MARKETS
Industrial Control

APPLICATIONS

DC Motor Power

Permanent Magnet Motor Controls

Supplies

Magnetic Clutches and Brakes

Industrial Heating

SCR Phase

Battery

Controlled Power Supplies

Charger Power Supplies

Machine Tool
Business Machine

Computer

Communication

OUTLINE DRAWING
-

(MOUNTING HOLES)
(

ENCAPSULANT)

s
4*-'

~jD

A
B
C
D
E

INCHES

ME1 RIC

MM
MIN.
MAX. MIN.
MAX.
2,485|2.5I 5 63.12 63.88
I.89C 1.9
48.01 48.5
1

.290
.1 55
.200
.620

F
G

1.2

i.or

.3

.21

.630

40 1.260

965

notes:

7.37 7.8 7

3.94
5.08 5.46
15.75 6.00
30.50 3 2 00
27.18 REF.
15.87 6.76

REF.
.630 .660
.057 .067 1.45
1.70
.055 .070
1.40
1.78
.523 .550 13.28 3.9 7
.800 .850 20.32 21.59

NOTES

2.

view shows typical locations.

see circuit schematics and terminal
positions for number of
terminals and their locations for
specific model.

3.

show maximum height of

varistor. view only shows typical
location. varistor appears only on
models beginning with letters wv.

4.

points (x-y) are for thermocouple

1.025 24.51 26.04

- 1.9 5 - 4864

.285
7.23
.027 .0 37
.69
.94
.245 .2 55 6.22 648
1.550 39.37

.2

R
S

X
Y

30
-

.31

.235

AA
AB

.065
.040

1444

.08 5

5.84

1.65
1.02

u dimension

a 2

PLACEMENT FOR BASE PLATE TEMPERATURE

MEASUEMENT.

7.3 7

5.97
2.1 6

terminals will accept .250 series

fast-on connectors.

5.

TABS SHOWN ATTACHED TO AC. TERMINALS

ARE INTENDED FOR GE-MOV VARISTOR
ATTACHMENT.

Power Module Nomenclature:

W V

GENERAL ELECTRIC
POWER MODULE
SERIES

GENE RAL ELECTRIC

GE-MO V VAR ISTOR
PROTECTED INPUT

BE

25

PHASE CONTROL POWER MODULES

BASEPLATE

CIRCUIT

DIMENSION

TYPE

MAX. CURRENT VOLTAGE

AT MAX. BASE
PLATE TEMP.

Current (Total Bridge, T BP = 85C)

(Total Bridge)
1
Critical Rate-Of-Rise of On-State Current, di/dt:
Gate Triggered Operation-Switching from 500 Volts
Peak One Cycle Surge (Non-Rep) On-State Current, I TSM 60Hz
2
(See Chart)
I t (for fusing), For Times at 8.3 milliseconds.
1.0 milliseconds

Maximum Average Output

DC Output Current I T(AV)

.'

'

"

",'

',;"

/^^

1,3 4 5
chart li >

t^e

100 Amperes Per Microsecond

300 Amperes
370 Ampere 2 Seconds
260 Ampere 2 Seconds

Peak Gate Power Dissipation, P GM

Average Gate Power Dissipation, P G (AV)
Peak Positive Gate Current, I GM
Peak Positive Gate Voltage, V GM
Peak Negative Gate Voltage, V GM
Storage Temperature, T STG
Operating Temperature, Tj
2
Isolation Breakdown Voltage Between Any Terminal and Base Plate
Minimum Strike and Creep Distance:
Terminal to Terminal
Terminal to Terminal
Minimum Strike and Creep Distance:
Terminal to Base Plate
Terminal to Base Plate
Maximum Weight
Maximum Weight
1

"

'A?
Depends on Conduction Angle (See Chart

Watts for 10 Microseconds

Vrwt

ni

)%H
unar
^ ee J*"

\%\

Ve P

"

\*>

^
W

^ \ |;" J;
o/nn\/
n ro
v\
^eaKj
^500 Volts
:* /b
(- y5

/,
;

^
CM

->

S2

?,
1 ' CM)

)};

2;" Ounces
<-'

^ ms

>

capability may be
di/dt rating is established in accordance with EIA NEMA Standard RS 397, Section 5.2.2.6. Off-State (blocking) voltage
repetition rate tor
temporarily lost after each current pulse for duration less than the period of the applied pulse repetition rate. The pulse
this test is 400 Hz. The duration of the di/dt test condition is 5 seconds (minimum).

Rating applies for 50, 60 and 400 Hz Sinusoidsl Wave Form.

CHARACTERISTICS
TEST
Critical Rate-Of-Rise

SYMBOL
dv/dt

MIN.

TYP.

MAX.

Volts/ )X sec

20

TEST CONDITIONS

UNITS

of Off-State Voltage
(Higher Values May

T BP = 125C, Rated
Circuited, Linear

V DRM

Gate Open

Wave Form

Cause Device
Switching)

DC Gate Trigger

GT

Current

DC Gate

Trigger

V GT

Voltage

Holding Current

0.20

40

mAdc

T BP = -40C,

80
2.5

T B p = 25C,

Vdc

V D = 12Vdc, R L = 80ft
V D = l2Vdc, R L = 5012

V D = 12Vdc, R L = 80ft
V D = 12Vdc, R L = 50ft
125C, V DRM = Rated, R L = lKft

T BP = 25C,

T BP = -40C,

3.0

T BP =

Anode Source Voltage = 24Vdc, Peak

Initiating On-State Current

= 0.5A,

10 msec Wide Pulse.

Gate Trigger Source = 7V, 20 ohms.

0.1

75

Latching Current

mAdc

150

msec

to

T BP = 25C.
T BP = -40C.
Main Terminal Source Voltage = 24Vdc,
Gate trigger source = 15V, 100 ohms,

50/isec pulse width, 5/Usec rise and

times max.

fall

150

Steady-State

RQbp-hs

mAdc

300
0.1

Thermal Resistance,
Base Pla t e to
Heat Sink

C/Watt

T BP

= 25 C.

T BP

= -40C.

NOTE: Assumes a

2.0 square inch surface

area with thermal grease, GE-G-640,

or equivalent on smooth contact
surface.

1445

PHASE CONTROL POWER MODULES

CIRCUIT FAMILY

BE

BJ

BA

25

25

25

BASIC CIRCUIT

SCHEMATIC

AVERAGE OUTPUT CURRENT

VOLTAGE INPUT

CIRCUIT*

TYPES

(VAC )

T BP =85C AMPS
120

240

I20

240

120

BASIC CIRCUIT

WV2BE25C

WV2BE25E

WV2BJ25C

WV2BJ25E

WV2BA25C

WITHOUT FREE WHEELING DIODE

WV2BC25C

WV2BC25E

WV2BK25C

WV2BK25E

W2BE25C

W2BE25E

W2BJ25C

W2BJ25E

W2BC25C

W2BC25E

W2BK25C

W2BK25E

RMS

WITHOUT GE-MOV VARISTOR PROTECTION

WITHOUT FREE WHEELING DIODE AND GE-MOV
VARISTOR PROTECTION

ACI

TERMINAL POSITION

AC1

G1

3>
AC2

^)AC2

G2

Gt

G2

W\

W2BA25C

ACI

G1

AC2

G2

*0THER

CIRCUIT TYPES AVAILABLE, CONTACT FACTORY.

+ CONTACT FACTORY FOR CURRENT RATINGS FOR APPLICABLE

CIRCUIT,

150
1*

RESISTIVE LOAD MODELS

BA
BE

BH

CONDUCTIO * ANGLE
""""V
60
OF OUTPUT WAVEFORM

12

o-^^l

NOTE
CURVES ASSUME ZERO GATE BIAS
DURING NEGATIVE BLOCKING.

80"

240*

0*

180'

360'

SHADED AREA
S CONDUCTION
ANGLE

30
C

"

1.

20

25

T AVER/IGE OUTP UT CURR ENT-AMF S TOT AL BRIDGE

I T AVERAGE OUTPUT CURRENT-AMPS TOTAL BRIDGE

MAX. ALLOWABLE BASE PLATE TEMPERATURE

VS. AVERAGE OUTPUT CURRENT (SINE WAVE)

2.

VS.

MAX. OUTPUT POWER DISSIPATION

AVERAGE OUTPUT CURRENT (SINE WAVE)

I
'0

15

20

15
20
I T AVERAGE OUTPUT CURRENT-AMPS TOTAL BRIDGE

I T AVERAGE OUTPUT CURRENT-AMPS TOTAL BRIDGE

5.

MAX. ALLOWABLE BASE PLATE TEMPERATURE

AVERAGE OUTPUT CURRENT (SQUARE WAVE)

VS.

6.

1446

VS.

MAX. OUTPUT POWER DISSIPATION

AVERAGE OUTPUT CURRENT (SQUARE WAVE
>

PHASE CONTROL POWER MODULES

DC

DA

CA

AA

BH

G2

Gl

(>G2
lilo
Gl

AC

-Gfr

*ACI

AC2

*ACI

AC2*

25

50(Arms)

25

240

120

240

120

240

120

WV2BH25C

WV2BH25E

WV2AA50C

WV2AA50E

WV2CA25C

WV2CA25E

WV2DA

W2BH25C

W2BH25E

W2AA50C

W2AA50E

W2CA25C

W2CA25E

W2DA

AC2

ACT

Gl

AC2

G2

=3)

G2

AC1

G2

G4

G1

G3

AC1

Gl

WV2DA

>

2
=1

W2DA

AC2

120

240

WV2DC

WV2DC

240

120

W2DC

b)

>

AC

1=1

W2DC

a=s
G1

='

G2

t=>

INUSOIDAL WAVEFORM 60H z

ONDUCTION ANGLE

360*

MODEL AA
1

30
1* RESISTIVE LOAD
MODEL CA
CONDUCTION ANGLE

/K"
A.V-

_.
[

yu
-j
a.

CO NDUCTIO i ANGLE
OF OUTPUT WAVEFO

at

m^

60

\
IE0 8

SHADED

INDUCTION

ISO" 360

160

3
* 50

50

if i[

360

30

I T AVERAGE OUTPUT CURRENT (AMPS)

I T (RMS) OUTPUT CURRENT (AMPS)

3.

MAX. ALLOWABLE BASE PLATE TEMPERATURE

VS.

MAX. ALLOWABLE BASE PLATE TEMPERATURE

AVERAGE OUTPUT CURRENT

VS.

RMS OUTPUT CURRENT

(SINE

WAVE)

70

ro

1
1

360"

60
to

NOTE.
:s assuk E ZERO
NEGA1 IVE BLOC KING.

CURV

ATE

81 A:

^40V/

NOTE:
\T BIAS DURING

DURING

NEGATIVE BLOCKING.

*
z
o

180 y

I20J

CL

CONDUCTION ANGLE OF

OUTPUT WAVEFORM

y60"

30
\$
Q.

SINUSO DAL WAV :form 6ohi

360 C JNDUCTIO N ANGLE
Tj

125 C

I T AVERAGE OUTPUT CURRENT (AMPS)

I T (RMS) OUTPUT CURRENT (AMPS)

7.

MAX. POWER DISSIPATION

VS.

RESISTIVE LOAD
MODEL CA

^
O

RMS OUTPUT CURRENT

8.

1447

VS.

MAX. OUTPUT POWER DISSIPATION

AVERAGE OUTPUT CURRENT (SINE WAVE)

PHASE CONTROL POWER MODULES

s ,02

80
60

UJ
Q.

40

60

Z
T 40

t-

u
K 20

20

MAX MUt

12! i"C>

3
O
o

MAXIMUM 25C

10

S
B
2
o
u

ft

6
4

MAXIMUM

I25

C> AlAXIMUM 2SC

io

6
4

NVXSNI

2.0

2.0

INSTANTANEOUS FORWARD DROP-VOLTS

INSTANTANEOUS FORWARD VOLTAGE-VOLTS

INSTANTANEOUS ON-STATE VOLTAGE VS.

INSTANTANEOUS ON-STATE CURRENT (SCR)

INSTANTANEOUS FORWARD VOLTAGE VS.

INSTANTANEOUS FORWARD CURRENT (DIODE

10.

m
i

NOTE:

CURVE

ASSUME ZERO et TE BIAS

DURING NEGATIV E BLOCK N6.

to

MICROSECONDS PULSE WIDTH

*
o

12 3*

jf

60-

CONDUCT ION ANGL E OF

OUTPUT WAVEFOF IM

z
2

40

MAXIMUM ALLOWABLE INSTANTANEOUS

"GATE POWER DISSIPATION EOUALS
5 WATTS MAXIMUM TOR 10

40

<a
<n

1
a.
1*

AVER AGE POW ER LOSS

RES STIVE LO AD MODE
BH

o
i-

IC

15

I T AVERAGE OUTPUT CURRENT-AMPS TOTAL BRIDGE

11.

VS.

25

.02

.04

.06 .08.10

0.2

INSTANTANEOUS GATE CURRENT

MAX. OUTPUT POWER DISSIPATION

AVERAGE OUTPUT CURRENT (SINE WAVE)

12.

0.4

0.8

(AMPS)

GATE TRIGGER CHARACTERISTICS

NOTES:

CURVES APPLY FOR HALF SINE

WAVE CURRENT WAVEFORM.
THIS OVERLOAD MAY BE APPLIED
FOLLOWING DEVICE OPERATION AT
ANY VOLTAGE OR CURRENT WITHIN
ITS STEADY -STATE RATING LIMITS.
3. THE OVERLOAD MAY NOT BE REPEATED
UNTIL DEVICE JUNCTION TEMPERATURE
HAS COOLED DOWN TO WITHIN STEADY
STATE RATED VALUE.
4. NO BLOCKING VOLTAGE RATING IS
IMPLIED DURING OR IMMEDIATELY
FOLLOWING THE OVERLOAD CURRENT
I.

2.

1.60 H *-_
2. GAT t UONIHOL

IM*
3.CU RENT

MAYBE LOST DURING AND

IL
*

if
-1000

INTERVAL.
5.JUNCTI0N TEMPERATURE IMMEDIATELY
PRIOR T0 0VERL0AD = -4O"CT0+l25'C

OVERLOAD MAY NOT BE REPEATED UNTIL

STE ADY-SJ1 TE R ATEt> VALUE.

I
4

IO

20

NUMBER OF FULL CYCLES

13.

PULSE WIDTH

MAXIMUM ALLOWABLE SURGE CURRENT

14.

FOLLOWING RATED LOAD CONDITIONS

1448

SUB-CYCLE SURGE AND

5 6

(fiSEC)

T RATING
FOLLOWING RATED LOAD CONDITIONS
I

1.0

GENERAL ELECTRIC WORLDWIDE ELECTRONIC COMPO.

ALABAMA
ILLINOIS
NEW YORK
Huntsville 35801
3322

Chicago 60641

Memorial Pkwy.

S.

Area Code:

3800

Albany 12205
1 1
Computer Dr., W.

777-1600

Area Code: 518

458-7 765

N. Milwaukee Ave.
Area Code: 312

Suite 4

205

883-9220

INDIANA

ARIZONA
Phoenix 85016
5320 North 16th
Area Code: 602
264-1751

Ft.

Wayne 46805

2109
St.

E.

State Blvd.

Area Code: 219

482-4557
Indianapolis 46208
3750 N. Meridian St.

CALIFORNIA

Area Code:

Los Angeles 90064

11840 W. Olympic Blvd.
Area Code: 213

317

9237221

MASSACHUSETTS

479-7763

Wellesley 02181
Palo Alto 94304
1801 Page Mill Rd.

Suite

1 Washington St.
Area Code: 617
237-2050

223

Area Code:

415

493-2600

MICHIGAN

COLORADO

Southfield

Denver 80201
201 University Blvd.
Mailing Address:
P.O. Box 2331, 80201
Area Code: 303
320-3031

CONNECTICUT
Bridgeport 06602
1285 Boston Ave.
Building 28-CE

Area Code: 203

334-1012

Kansas City 64105

911 Main St.

518

221-4033

Area Code: 816

Louis 631 32
530 Fairview Si.
Area Code: 314
St.
1

429-6941
North Palm Beach 33408
321 Northlake Blvd.
Suite 101
Area Code: 305

844-5202

^rea Code: 412

Rochester 14623

921-4134

SOOOWinton

Rd.,

S.

NEW JERSEY

461-5400

Dallas 75240
6530 LBJ Freeway

Syracuse 13201
Btdg,

1,

Room

Suite 119-B
Area Code: 214

227

Electronics Pk,

661-8582

Area Code: 315

456-2196

NORTH CAROLINA
Greensboro 27408
1828 Banking St.
P.O.

Box 9476

Mailing Address:
P.O. Box 2143
Kettering Branch

45429

Area Code: 513

298-0311

OKLAHOMA
Oklahoma City 73112
3022 Northwest Expressway
May-Ex Building
Room 412
Area Code: 405
943-9015

PENNSYLVANIA

Area Code: 201

227-6050

Building 63-2

Erie

Houston 77036
7011 S.W. Freeway
Suite 106
Area Code: 713
777-3443

VIRGINIA

070O6
420 Route 46
Fairfield

TEXAS

Area Code: 716

Cleveland 44132
26250 Euclid Ave.
Area Code: 216
266-2900
Dayton 45439
3430 S. Dixie Highway

MISSOURI

Pitt-burgh 15220
3 ffcrkway Center

Room 304

OHIO

835-2550

935 Old Eagle School Rd,

Area Code: 215
362-1500

516

Minneapolis 55435
4900 Viking Dr.

Room 108

(Philadelphia)

681-0900

MINNESOTA

Washington)
Falls Church, Va. 22043
7777 Leesburg Pike
Area Code: 703

FLORIDA

Area Code:

2/77

Wjyne 19087

New York City - call:

Jericho 1 17S3
400 Jericho Tnpk.

355-3552

Area Code: 612

SALES OFFICES

Of

Area Code: 919

273-6981

Suite

790-1700

48075

24681 Northwestern
Area Code: 313

DISTRICT OF COLUMBIA
I

"S

Waynesboro 22980
Suites 19 and 20
Skyline Motor Court
Rt. 250 East
Area Code: 703
943-1151
Portsmouth 23707
808 Loudon Ave.
Area Code: 804
397-8752

WASHINGTON
Seattle
1

98188

12 Andover Park,

E.

Box 88850,98188
Area Code: 206
575-2866
P.O.

WISCONSIN
Milwaukee 53202

615

E. Michigan
Area Code: 414
271-5000

St.

16531

1100 Lawrence Pkwy.

Area Code: 814

455-5466

AFRICA

CANADA

S.A. General Electric (Pty) Ltd

Canadian General Electric Co

189 Dufferin St.
Toronto, Ontario, Canada
Area Code: 416
Tel: 537-4481

Box 24
Maitland 7405

P.O.

R.S.A.
Tel:

511251

INDIA

MEXICO

Elpro international Ltd.

Producer Goods Dept.
Nirmal, 17th Flpor

General Electric De Mexico, S.A.

Apartado 53-983
Marina Nacional No. 365
Mexico 17 D.F.
Tel; 545-63-60

Nariman Pomt, Bombay 400021

Tel: 232471

S.A. General Electric Ltd.

P.O. Box 1482

ENGLAND

IRELAND

SINGAPORE

Capetown, R.S.A
Tel: 51-1251

International General Electric

Company of New York, Ltd.

Electronic Trading Co.

General Electric (USA) Asia Co.

Cathay Building, Suite 104

AUSTRALIA

Park Lome,
1 1 1 Park Rd.

Australian General Electric Ltd

London NW87 JL

86-90 Bay

Tel:

St.

Ultimo, N.S.W., 2007

Tel:

212-3711

AUSTRIA

01-402-4100

ITALY

FRANCE

Compagnia Genera le Di

General Electric Technical Service

Company Inc., France

General Electric Technical

42 Avenue Montaigne

Service Company, Inc.

East Central Europe Liaison
Peter Jordan Strasse 99

Paris-8 e
Tel: 225-52-32

A-1 180 Vienna, Austria

BELGIUM
General Electric Company (USA]
Chaussee De La Hulpe 150

170 Brussels
Tel: 680 20 10
B-l

The Demesne
County Louth
Dundalk
Tel: (042I 32371

GERMANY

Elettricita S.P.A.

Via Pergolesi 25
20124 Milan
Tel:

General Electric Germany

Postfach*2963
*
Eschersheimer Landstrasse =30-62
6000 Frankfurt/Ma 1
Tel: 106111-15641

202808-203208

SPAIN
International General Electric
Company of Spain, S.A.
Edificio Espana Apartado 700

Avenida Jose Antonio 88

Madrid
Tel: 247.16.05

SWEDEN

International General Electric

JAPAN
General Electric Japan, Ltd.
Tonichi Bldg., 5th Floor
2-31, Roppongi,

Orchard Road
Singapore, 9

6-Chome,

Minato*Ku
Tokyo, 106 Japan
Tel: 03-405-2920

AB

Fack, Tritonvagen 27
17120 Solna

Sweder
081730 07 40

Tel:

VENEZUELA
General Electric

De Venezuela

S.A.

Sabana Grande^
Caracas

451.138

PRINTED

IN U.S.A.