IXGN320N60A3

GenX3TM 600V IGBT

VCES = 600V
IC110 = 170A
VCE(sat) 1.30V

Ultra-Low-Vsat PT IGBT for

up to 5kHz Switching
E

SOT-227B, miniBLOC
E153432

Symbol

Test Conditions

Maximum Ratings

VCES

TJ = 25C to 150C

600

VCGR

TJ = 25C to 150C, RGE = 1M

600

VGES

Continuous

20

VGEM

Transient

30

IC25
IC110
ILRMS
ICM

TC = 25C (Chip Capability)

TC = 110C
Terminal Current Limit
TC = 25C, 1ms

320
170
200
1200

A
A
A
A

G = Gate, C = Collector, E = Emitter

SSOA

VGE = 15V, TVJ = 125C, RG = 1

ICM = 320

Either Emitter Terminal Can Be Used

(RBSOA)

Clamped Inductive Load

PC

TC = 25C

E
G

E
C

as Main or Kelvin Emitter

@0.8 VCES
735

TJ

-55 ... +150

Features

TJM
Tstg

150
-55 ... +150

C
C

2500
3000

V~
V~

1.5/13
1.3/11.5

Nm/lb.in
Nm/lb.in

30

VISOL
Md

50/60Hz
IISOL 1mA

t = 1min
t = 1s

Mounting Torque
Terminal Connection Torque (M4)

Weight

Advantages

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IC

= 1mA, VGE = 0V

600

VGE(th)

IC

= 4mA, VCE = VGE

3.0

ICES

VCE = VCES, VGE = 0V

TJ = 125C

IGES

VCE = 0V, VGE = 20V

VCE(sat)

IC
IC

= 100A, VGE = 15V, Note 1

= 320A

2015 IXYS CORPORATION, All Rights Reserved

V
5.5

150 A

1.5 mA

400 nA
1.05
1.46

1.30

High Power Density

Low Gate Drive Requirement

Applications

Characteristic Values
Min.
Typ.
Max.

BVCES

Optimized for Low Conduction Losses

High Avalanche Capability
Isolation Voltage 3000 V~
International Standard Package

V
V

Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits

DS99576E(01/15)

IXGN320N60A3
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)

Characteristic Values
Min.
Typ.
Max.

gfs

70

IC = 60A, VCE = 10V, Note 1

Cies
Coes

VCE = 25V, VGE = 0V, f = 1MHz

Cres
Qg(on)
Qge

IC = 80V, VGE = 15V, VCE = 0.5 VCES

Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf

Resistive Load, TJ = 25C

IC = 80A, VGE = 15V
VCE = 400V, RG = 1
Resistive Load, TJ = 125C

125

18

nF

985

pF

150

pF

560

nC

94

nC

195

nC

63

ns

68

ns

290

ns

740

ns

62

ns

77

ns

330

ns

1540

ns

IC = 80A, VGE = 15V

VCE = 400V, RG = 1

M4 screws (4x) supplied

0.17 C/W

RthJC
RthCK

Note

SOT-227B miniBLOC (IXGN)

0.05

C/W

1. Pulse test, t 300s, duty cycle, d 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXGN320N60A3
Fig. 2. Output Characteristics @ TJ = 125C

Fig. 1. Extended Output Characteristics @ TJ = 25C

160

320
VGE = 15V
13V
11V
9V

I C - Amperes

240

VGE = 15V
13V
11V
9V

140
120

200

I C - Amperes

280

7V

160
120

100
80

7V

60
40

80

5V

20

40

5V
0

0
0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

1.8

0.2

0.4

VCE - Volts

Fig. 3. Dependence of VCE(sat) on

Junction Temperature

1.10

0.8

1.2

1.4

Fig. 4. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage
3.2
TJ = 25C
2.8

1.00
I C = 160A

2.4

VCE - Volts

0.95
0.90
0.85

I C = 320A
160A
80A

2.0

1.6
0.80

I C = 80A
1.2

0.75
0.70

0.8
-50

-25

25

50

75

100

125

150

Fig. 5. Input Admittance

200

10

11

12

13

14

15

180

200

VGE - Volts

TJ - Degrees Centigrade

Fig. 6. Transconductance

240

TJ = - 40C

180
200

160

TJ = 125C
25C
- 40C

25C

g f s - Siemens

140

I C - Amperes

1.0

VGE = 15V

1.05

VCE(sat) - Normalized

0.6

VCE - Volts

120
100
80

160
125C

120

80

60
40

40

20
0

0
3.5

4.0

4.5

5.0

5.5

VGE - Volts

2015 IXYS CORPORATION, All Rights Reserved

6.0

6.5

7.0

20

40

60

80

100

I C - Amperes

120

140

160

IXGN320N60A3
Fig. 7. Gate Charge

Fig. 8. Capacitance
100,000

16

Capacitance - PicoFarads

I C = 80A
I G = 10mA

12

VGE - Volts

f = 1 MHz

VCE = 300V

14

10
8
6
4

Cies

10,000

Coes
1,000

Cres

2
100

0
0

100

200

300

400

500

600

10

15

Fig. 9. Reverse-Bias Safe Operating Area

350

20

25

30

35

40

VCE - Volts

QG - NanoCoulombs

Fig. 10. Maximum Transient Thermal Impedance

300

Z(th)JC - C / W

I C - Amperes

250
200
150
100

0.1

0.01

TJ = 125C
RG = 1
dv / dt < 10V / ns

50
0
100

150

200

250

300

350

400

450

500

550

600

VCE - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

0.001
0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

10

IXGN320N60A3
Fig.11. Resistive Turn-on Rise Time
vs. Junction Temperature

170

170

RG = 1 , VGE = 15V

RG = 1 , VGE = 15V

150

VCE = 400V

130

t r - Nanoseconds

t r - Nanoseconds

150

Fig. 12. Resistive Turn-on Rise Time

vs. Collector Current

I C = 320A

110
I C = 160A

90

70

VCE = 400V

130
TJ = 125C
110

90

70

I C = 80A

50

TJ = 25C

50
25

35

45

55

65

75

85

95

105

115

125

80

100

120

140

160

Fig. 13. Resistive Turn-on Switching Times

vs. Gate Resistance
tr

400

tf

220

240

260

280

300

320

76

I C = 320A, 160A, 80A

250

72

200

68

150

64

100

60

340

I C = 80A

VCE = 400V
1300

300
I C = 160A

1100

260

900

I C = 320A

700

220

td(off) - Nanoseconds

80

380

td(off) - - - -

RG = 1, VGE = 15V

1500

t d ( o n ) - Nanoseconds

VCE = 400V

300

200

Fig. 14. Resistive Turn-off Switching Times

vs. Junction Temperature

1700

84

TJ = 125C, VGE = 15V

350

t r - Nanoseconds

88

td(on) - - - -

t f - Nanoseconds

450

180

I C - Amperes

TJ - Degrees Centigrade

180

I C = 80A
50

500

56
1

25

10

35

45

55

Fig. 15. Resistive Turn-off Switching Times

vs. Collector Current
1600

350
TJ = 125C

tf

1700

TJ = 25C

250

600

225

t f - Nanoseconds

t f - Nanoseconds

105

115

140
125

200

RG = 1, VGE = 15V

900

VCE = 400V

800

1500

700

I C = 80A

1400

600

I C = 160A

1300

500

1200

400

1100

td(off) - - - -

1000

td(off) - - - -

t d(off) - Nanoseconds

275

t d(off) - Nanoseconds

1000

tf

95

TJ = 125C, VGE = 15V

1600
300

400

85

Fig. 16. Resistive Turn-off Switching Times

vs. Gate Resistance

1800

325

1200

800

75

TJ - Degrees Centigrade

RG - Ohms

1400

65

300

I C = 320A

1000

200

VCE = 400V
200
80

120

160

200

240

I C - Amperes

2015 IXYS CORPORATION, All Rights Reserved

280

175
320

900

100
1

10

RG - Ohms

IXYS REF: G_320N60A3(96)7-03-08-A