ON Semiconductor

BUH150

SWITCHMODE
NPN Silicon

Planar Power Transistor

POWER TRANSISTOR
15 AMPERES
700 VOLTS
150 WATTS

The BUH150 has an application specific stateofart die designed

for use in 150 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
This High voltage/High speed product exhibits the following main
features:

Improved Efficiency Due to the Low Base Drive Requirements:

High and Flat DC Current Gain hFE

Fast Switching
Robustness Thanks to the Technology Developed to Manufacture
this Device
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

CollectorEmitter Sustaining Voltage

VCEO

400

Vdc

CollectorBase Breakdown Voltage

VCBO

700

Vdc

CollectorEmitter Breakdown Voltage

VCES

700

Vdc

EmitterBase Voltage

VEBO

10

Vdc

Collector Current Continuous

Peak (1)

IC
ICM

15
25

Adc

Base Current Continuous

Base Current Peak (1)

IB
IBM

6
12

Adc

*Total Device Dissipation @ TC = 25
C

*Derate above 25C

PD

150
1.2

Watt
W/
C

TJ, Tstg

65 to 150

C

RJC
RJA

0.85
62.5

TL

260

Operating and Storage Temperature

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

3
CASE 221A09
TO220AB

THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient

Maximum Lead Temperature for Soldering Purposes:

1/8 from case for 5 seconds

C/W

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 3

Publication Order Number:

BUH150/D

This datasheet has been downloaded from http://www.digchip.com at this page

BUH150

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

CollectorEmitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

VCEO(sus)

400

460

Vdc

CollectorBase Breakdown Voltage

(ICBO = 1 mA)

VCBO

700

860

Vdc

EmitterBase Breakdown Voltage

(IEBO = 1 mA)

VEBO

10

12.3

Vdc

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ICEO

100

Adc

OFF CHARACTERISTICS

Collector Cutoff Current

(VCE = Rated VCES, VEB = 0)

@ TC = 25C
@ TC = 125C

ICES

100
1000

Adc

Collector Base Current

(VCB = Rated VCBO, VEB = 0)

@ TC = 25C
@ TC = 125C

ICBO

100
1000

Adc

IEBO

100

Adc

EmitterCutoff Current
(VEB = 9 Vdc, IC = 0)

ON CHARACTERISTICS

BaseEmitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

CollectorEmitter Saturation Voltage

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25C
@ TC = 125C

VBE(sat)

1.25

Vdc

VCE(sat)

0.16
0.15

0.4
0.4

Vdc

(IC = 10 Adc, IB = 2 Adc)

@ TC = 25C

0.45

Vdc

(IC = 20 Adc, IB = 4 Adc)

@ TC = 25C

Vdc

DC Current Gain (IC = 20 Adc, VCE = 5 Vdc)

@ TC = 25C
@ TC = 125C

DC Current Gain (IC = 10 Adc, VCE = 5 Vdc)

hFE

4
2.5

7
4.5

@ TC = 25C
@ TC = 125C

8
6

12
10

DC Current Gain (IC = 2 Adc, VCE = 1 Vdc)

@ TC = 25C
@ TC = 125C

12
14

20
22

DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc)

@ TC = 25C

10

20

1.5

DYNAMIC SATURATION VOLTAGE

VCE(dsat)
(
)

IC = 5 Adc, IB1 = 1 Adc

VCC = 300 V

@ TC = 25C

@ TC = 125C

2.8

IC = 10 Adc, IB1 = 2 Adc

VCC = 300 V

@ TC = 25C

2.4

@ TC = 125C

fT

23

MHz

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

100

150

pF

Input Capacitance
(VEB = 8 Vdc, f = 1 MHz)

Cib

1300

1750

pF

Dynamic Saturation
V lt
Voltage:
Determined 3 s after
rising IB1 reaches
90% of final IB1
(see Figure 19)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)

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BUH150

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s)

Turnon Time
Storage Time
Fall Time

IC = 2 Adc, IB1 = 0.2 Adc

IB2 = 0.2
0 2 Adc
VCC = 300 Vdc

@ TC = 25C

ton

200

300

ns

@ TC = 25C

ts

5.3

6.5

@ TC = 25C

tf

240

350

ns

Turnoff Time

@ TC = 25C

toff

5.6

Turnon Time

@ TC = 25C

ton

100

200

ns

@ TC = 25C

ts

6.1

7.5

@ TC = 25C

tf

320

500

ns

@ TC = 25C

toff

6.5

@ TC = 25C
@ TC = 125C

ton

450
800

650

ns

@ TC = 25C
@ TC = 125C

toff

2.5
3.9

@ TC = 25C
@ TC = 125C

ton

500
900

700

ns

@ TC = 25C
@ TC = 125C

toff

2.25
2.75

2.75

Storage Time
Fall Time

IC = 2 Adc, IB1 = 0.4 Adc

IB2 = 0.4
0 4 Adc
VCC = 300 Vdc

Turnoff Time

Turnon Time
Turnoff Time

IC = 5 Adc, IB1 = 0.5 Adc

IB2 = 0.5
0 5 Adc
VCC = 300 Vdc

Turnon Time
Turnoff Time

IC = 10 Adc, IB1 = 2 Adc

IB2 = 2 Adc
VCC = 300 Vdc

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)

Fall Time

@ TC = 25C
@ TC = 125C

tfi

110
160

250

ns

@ TC = 25C
@ TC = 125C

tsi

6.5
8

Crossover Time

@ TC = 25C
@ TC = 125C

tc

235
240

350

ns

Fall Time

@ TC = 25C
@ TC = 125C

tfi

110
170

250

ns

@ TC = 25C
@ TC = 125C

tsi

6
7.8

7.5

Crossover Time

@ TC = 25C
@ TC = 125C

tc

250
270

350

ns

Fall Time

@ TC = 25C
@ TC = 125C

tfi

110
140

150

ns

@ TC = 25C
@ TC = 125C

tsi

3.25
4.6

3.75

Crossover Time

@ TC = 25C
@ TC = 125C

tc

275
450

350

ns

Fall Time

@ TC = 25C
@ TC = 125C

tfi

110
160

175

ns

@ TC = 25C
@ TC = 125C

tsi

2.3
2.8

2.75

@ TC = 25C
@ TC = 125C

tc

250
475

350

ns

Storage Time

Storage Time

Storage Time

Storage Time

Crossover Time

IC = 2 Adc
IB1 = 0.2 Adc
IB2 = 0.2 Adc

IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 0.4 Adc

IC = 5 Adc
IB1 = 0.5 Adc
IB2 = 0.5 Adc

IC = 10 Adc
IB1 = 2 Adc
IB2 = 2 Adc

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BUH150
TYPICAL STATIC CHARACTERISTICS
100

100

VCE = 3 V

TJ = 125C

TJ = -
20C

10

1
0.001

0.01

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

VCE = 1 V

TJ = 25C

0.1
1
10
IC, COLLECTOR CURRENT (AMPS)

TJ = 125C

TJ = -
20C

10

1
0.001

100

Figure 1. DC Current Gain @ 1 Volt

100

10
IC/IB = 5

VCE = 5 V
TJ = 125C

TJ = -
20C

10

1
0.01

VCE , VOLTAGE (VOLTS)

hFE , DC CURRENT GAIN

0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volt

100

TJ = 25C

0.1
1
10
IC, COLLECTOR CURRENT (AMPS)

TJ = 25C
TJ = -
20C

0.1

0.01
0.001

100

TJ = 125C

0.01

0.1
1
10
IC, COLLECTOR CURRENT (AMPS)

100

Figure 4. CollectorEmitter Saturation Voltage

Figure 3. DC Current Gain @ 5 Volt

10

1.5
IC/IB = 5
VBE , VOLTAGE (VOLTS)

IC/IB = 10
VCE , VOLTAGE (VOLTS)

TJ = 25C

1
TJ = 125C
0.1

1
TJ = -
20C
0.5

TJ = 125C

TJ = 25C
0.01
0.001

0.01

0.1
1
10
IC, COLLECTOR CURRENT (AMPS)

0
0.001

100

TJ = 25C

Figure 5. CollectorEmitter Saturation Voltage

0.01
1
10
0.1
IC, COLLECTOR CURRENT (AMPS)

Figure 6. BaseEmitter Saturation Region

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100

BUH150
TYPICAL STATIC CHARACTERISTICS
1.5

2
TJ = 25C
VCE , VOLTAGE (VOLTS)

VBE , VOLTAGE (VOLTS)

IC/IB = 10
1
TJ = -
20C
TJ = 25C

0.5

TJ = 125C

1.5

1
20 A
15 A

VCE(sat)
(IC = 1 A)

0.5

5A
0
0.001

0.01

0.1
1
10
IC, COLLECTOR CURRENT (AMPS)

0
0.01

100

Figure 7. BaseEmitter Saturation Region

1
IB, BASE CURRENT (A)

100

10

Figure 8. Collector Saturation Region

10000

900

Cib (pF)

TJ = 25C
f(test) = 1 MHz

1000

Cob (pF)

100

BVCER @ 10 mA

800
BVCER (VOLTS)

C, CAPACITANCE (pF)

0.1

8A

10 A

TJ = 25C

700
BVCER(sus) @ 200 mA

600
500

10

10
VR, REVERSE VOLTAGE (VOLTS)

400

100

10

Figure 9. Capacitance

100
RBE ()

Figure 10. Resistive Breakdown

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5

1000

BUH150
TYPICAL SWITCHING CHARACTERISTICS
12

2000
1800

IB1 = IB2
VCC = 300 V
PW = 40 s

1600

10

25C

125C

1200
1000

t, TIME (s)

t, TIME (ns)

1400

IC/IB = 10

125C

800
400

25C

200

IC/IB = 5

9
12
6
IC, COLLECTOR CURRENT (AMPS)

IC/IB = 10

IC/IB = 5

15

6
5

IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H

IC/IB = 10

7
6
t, TIME (s)

IC/IB = 5

t, TIME (s)

15

Figure 12. Resistive Switch Time, toff

IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H

4
3

3
2

2
TJ = 125C
TJ = 25C

1
1

TJ = 125C
TJ = 25C

5
9
11
7
IC, COLLECTOR CURRENT (AMPS)

13

15

Figure 13. Inductive Storage Time, tsi

IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H

450

IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H

700
600
tc

250

10

800

TJ = 125C
TJ = 25C

350

4
7
IC, COLLECTOR CURRENT (AMPS)

Figure 13 Bis. Inductive Storage Time, tsi

t, TIME (ns)

550

t, TIME (ns)

5
10
IC, COLLECTOR CURRENT (AMPS)

Figure 11. Resistive Switching, ton

IB1 = IB2
VCC = 300 V
PW = 20 s

600

TJ = 25C
TJ = 125C

tfi

500

TC = 125C
TC = 25C

tc

400
300

tfi

200

150

100
50

7
5
9
11
IC, COLLECTOR CURRENT (AMPS)

13

15

Figure 14. Inductive Storage Time,

tc & tfi @ IC/IB = 5

4
8
6
IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time,

tc & tfi @ IC/IB = 10

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10

BUH150
TYPICAL SWITCHING CHARACTERISTICS
5

200
IC = 5 A
t fi , FALL TIME (ns)

150

3
2
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H

1
0

100
IC = 5 A
50

IC = 10 A
4

TJ = 125C
TJ = 25C

6
hFE, FORCED GAIN

10

IC = 10 A

6
7
hFE, FORCED GAIN

800
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H

700
600

TJ = 125C
TJ = 25C
IC = 10 A

500
400

IC = 5 A

300
200
100

IBoff = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H

Figure 17. Inductive Fall Time

Figure 16. Inductive Storage Time

t c , CROSSOVER TIME (ns)

tsi , STORAGE TIME (s)

TJ = 125C
TJ = 25C

6
7
hFE, FORCED GAIN

Figure 18. Inductive Crossover Time

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7

10

10

BUH150
TYPICAL SWITCHING CHARACTERISTICS
10
VCE

IC

90% IC

dyn 1 s

dyn 3 s

tfi

tsi

6
Vclamp

0V

10% Vclamp

4
90% IB

1 s

IB

IB

90% IB1

10% IC

tc

3 s

TIME

Figure 19. Dynamic Saturation Voltage

Measurements

4
TIME

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V
1 F

150
3W

100
3W

VCE PEAK
MTP8P10

MPF930

MUR105

MPF930

+10 V

IC PEAK

100 F

MTP8P10

VCE

RB1

IB1
IB

Iout
A

50

MJE210

COMMON
500 F

150
3W

IB2

RB2
MTP12N10

1 F
-Voff

V(BR)CEO(sus)
L = 10 mH
RB2 =
VCC = 20 Volts
IC(pk) = 100 mA

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Inductive Switching
L = 200 H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1

RBSOA
L = 500 H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1

BUH150
TYPICAL THERMAL RESPONSE

POWER DERATING FACTOR

1
SECOND BREAKDOWN
DERATING

0.8
0.6

THERMAL DERATING

0.4
0.2
0

20

40

80
120
100
60
TC, CASE TEMPERATURE (C)

140

160

Figure 21. Forward Bias Power Derating

TJ(pk) may be calculated from the data in Figure 24. At any

case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turnoff with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 23). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate ICVCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 22 is
based on TC = 25C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 22 may be found at any case temperature by using the
appropriate curve on Figure 21.

1 s
10

5 ms
DC

10 s
1 ms

0.1

0.01

100
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

16

EXTENDED SOA

IC, COLLECTOR CURRENT (AMPS)

100

GAIN 5

14
12
10
8
6

-5 V

4
0V

2
0
300

1000

Figure 22. Forward Bias Safe Operating Area

TC 125C
LC = 4 mH

-1.5 V

400
500
600
700
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

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800

BUH150
TYPICAL THERMAL RESPONSE

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

1
0.5

0.2

0.1

P(pk)

0.1
0.05

t1

0.02
0.01
0.01

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.1

RJC(t) = r(t) RJC

RJC = 0.83C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RJC(t)

10
t, TIME (ms)

Figure 24. Typical Thermal Response (ZJC(t)) for BUH150

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10

100

1000

BUH150
PACKAGE DIMENSIONS

STYLE 1:
PIN 1.
2.
3.
4.

TO220AB
CASE 221A09
ISSUE AA
BASE
COLLECTOR
EMITTER
COLLECTOR

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

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INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

BUH150

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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
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BUH150/D