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Semiconductors
Introduction
The materials are classified on the basis of conductivity
and resistivity.
Semiconductors are the materials which has conductivity,
resistivity value in between conductor and insulator .
The resistivity of semiconductor is in the order of 104 to
0.5 Ohm-metre.
It is not that, the resistivity alone decides whether a
substance is a semiconductor (or) not , because some
alloys have resistivity which are in the
range of
semiconductors resistivity. Hence there are some properties
like band gap which distinguishes the materials as
conductors, semiconductors and insulators.
15PY102L UNIT 1 LECTURE 2
(a)
(b)
(a)
(b)
(a)
(b)
Intrinsic Semiconductors
In semiconductors and insulators, when an external
electric field is applied the conduction is not possible as there
is a forbidden gap, which is absent in metals.
In order to conduct, the electrons from the top of the
full valence band have to move into the conduction band, by
crossing the forbidden gap.
The field that needs to be applied to do this work will
be extremely large.
15PY102L UNIT 1 LECTURE 2
1
f(E) =
1 + {exp[ E E F ) / k B T ]}
#
The Fermi level EF for an intrinsic semiconductor lies
midway in the forbidden gap.
#
The probability of finding an electron here is 50%, even
though energy levels at this point are forbidden.
#
O.5
F(E)
1.0
#
The fraction of electrons at energy E is equal to the
probability f(E). The number n of electrons promoted across the
gap,
n = N exp(Eg / 2kBT)
where N is the number of electrons available for excitation from
the top of the valence band.
Fermi level
The number of free electrons per unit volume in an intrinsic
semiconductor is
3/ 2
2 m*ekT
n=2 2
h
E E
exp F c
kT
2mh
k T
h2
EV E F
. exp
KT
2
2 me* k T 2
2 mh k T 2
E
Ev E F
F
c
ex p
2
2
exp
=
2
2
kT
kT
h
h
(m )
exp
(E F
E C ) 32
Ev E F
= m h exp
kT
KT
or
2EF
kT
m h
=
*
m
e
E + Ec
exp v
kT
mh
2 EF
3
= log e *
m
kT
2
e
+ log e exp E v + E c
kT
Ev + Ec
+
kT
or Ef =
m h
3kT
log e *
m
4
e
Ev + Ec
+
If we assume that,
E
E
=
+ E
2
m *e = m *h
[ since loge1 = 0]
Conduction band
Ec
(Eg /2)
(b)
(a)
EF
Eg
Ev
Valence band
EXTRINSIC SEMICONDUCTOR
In an extrinsic semiconducting material, the charge
carriers originate from impurity atoms added to the original
material is called impurity [or] extrinsic semiconductor.
This Semiconductor obtained by doping TRIVALENT and
PENTAVALENT
impurities
in
a
TETRAVALENT
semiconductor. The electrical conductivity of
pure
semiconductors may be changed even with the addition
of few amount of impurities.
DOPING
The method of adding impurities to a pure
semiconductor is known as DOPING, and the impurity
added is called the doping agent(Ex-Ar,Sb,P,Ge and
Al).
The addition of impurity would increases the no.
of free electrons and holes in a semiconductor and
hence increases its conductivity.
SORTS OF SEMICONDUCTOR according to ADDITION
OF IMPURITIES
n-type semiconductor
p-type semiconductor
15PY102L UNIT 1 LECTURE 2
N type semiconductor
When pentavalent impurity is added to the intrinsic
semiconductors, n type semi conductors are formed.
Conduction band
Ec
Ed
Eg
Ev
Valence band
n - type semiconductor
At T = 0K
Donors levels
occupied
Conduction band
Ec
Ed
Eg
Ev
Donors levels
ionised
Valence band
At T > 0K
At T = 300K
Fermi energy
The Fermi energy for n type semiconductor is given by
EF =
(Ec
+ Ed )
kT
Nd
+
ln
3
2
2
2 m e* kT
h2
/ 2
At 0 K,
EF =
(Ec + Ed )
2
kT
E + Ec
= d
ln
+
2
2
Nd
2 m e * kT
2
h2
3/2
Let
Nd
kT
Ed + Ec
=
ln
2
2
Nx
Nx
kT
E + Ec
= d
ln
2
2
Nd
2 m e * kT
2
h2
3 / 2
= N
P -Type Semiconductor
When trivalent impurity is added to intrinsic semiconductor, P
type semi conductors are formed.
Al has three electrons in the outer orbital. While substituting
for silicon in the crystal, it needs an extra- electron to
complete the tetrahedral arrangement of bonds around it.
The extra electron can come only from one of
the neighbouring silicon atoms, thereby creating a vacant
electron site (hole) on the silicon.
15PY102L UNIT 1 LECTURE 2
Conduction band
Ec
Eg
Ea
Ev
p - type semiconductor
15PY102L UNIT 1 LECTURE 2
Valence band
At T = 0K
Acceptors have
accepted electrons
from valence band
Ea
Ev
Valence band
(a) At T > 0K
(b) At T = 300K
15PY102L UNIT 1 LECTURE 2
Fermi Energy
The Fermi energy for p type semiconductor is given by
E
E + Ea
= v
2
At 0 K,
kT
Na
ln
3
*
2
2 m h kT
2
h2
EF =
/ 2
Ev + Ea
2
kT
Na
Ev + Ea
=
ln
3
2
2
2 2 m h * kT
h2
/ 2
Ev
where Ny = 2 2 m h
h
*
2
+ Ea
kT
kT
2
ln
Ny
Na
3 /2
Ny
Ev + Ea
kT
+
ln
2
2
Na
and therefore EF =
Na
Na